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Sample records for mev electron-irradiated gaas

  1. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S T; Nener, B D; Faraone, L; Nassibian, A G [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1994-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  2. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S.T.; Nener, B.D.; Faraone, L.; Nassibian, A.G. [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M.A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1993-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  3. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper ...

  4. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    1Department of Physics, Mangalore Institute of Technology and Engineering, ... strate were irradiated with 1 MeV electrons, they showed high radiation tolerance ... under both forward and reverse bias in the temperature range of 270–315 K ...

  5. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  6. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  7. Preliminary examination of induced radio activity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko

    1989-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper in order to reconfirm the wholesomeness of irradiated food and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. From elemental composition of the samples and investigation of photonuclear reactions, several β-emmitters were listed up. But no radioactivity other than from natural sources was detected in the irradiated sample by β-ray counting with 2 π gass flow counter, suggesting that the induced β-emmitters in the irradiated sample was below the detection limit of its induced radioactivity. (author)

  8. Preliminary examination of induced radioactivity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Sibata, Setsuko; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko.

    1991-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper with liquid scintillation counter in order to reconfirm the wholesomeness of irradiated foods and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. In irradiated black pepper no radioactivity other than from natural source, un-irradiated one, was detected. But in irradiated white pepper, it was suggested that induced radioactivity might be detected if the detection method was more improved. (author)

  9. The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

    Science.gov (United States)

    Babaee, S.; Ghozati, S. B.

    2017-12-01

    Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

  10. Evaluation of induced radioactivity in 10 MeV electron-irradiated spices

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Katayama, Tadashi; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1993-10-01

    In order to make clear appreciation to induced radioactivity in the irradiated foods, photonuclear reactions which could produce radioactivity at energies up to 10 MeV were listed up from elemental compositions of black pepper, white pepper, red pepper, ginger and turmeric. The samples were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy and radioactivity was measured. Induced radioactivity could not be detected significantly by gamma-ray spectrometry and beta-ray counting in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (J.P.N.).

  11. Dislocation Loops with a Burgers Vector Produced by 1 MeV Electron Irradiation in FCC Copper-Nickel

    DEFF Research Database (Denmark)

    Leffers, Torben; Barlow, P.

    1975-01-01

    Dislocation loops with Burgers vector a are formed in Cu-Ni alloys during 1 MeV electron irradiation in a high-voltage electron microscope at 350°-400°C. The dislocation loops are of interstitial type and pure edge in character with line vectors. Some of the loops are seen to dissociate into loop...

  12. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  13. Radiation damage in uranium under electron irradiation of energies up to 20 MeV

    International Nuclear Information System (INIS)

    Emets, N.L.; Zelenskij, V.F.; Kuz'menko, V.A.; Ranyuk, Yu.N.; Reznichenko, Eh.A.; Shilyaev, B.A.; Yamnitskij, V.A.

    1980-01-01

    The problem of conservation of primary radiation-induced defects in uranium irradiated by electrons with the energy exceeding photo fission threshold is considered. Calculation of uranium burnout is carried out. Calculations are conducted by the method of mathematical simulation, using some nuclear models; development of electromagnetic cascade in uranium, photofission process, elastic and inelastic electron scattering, as well as some secondary processes are taken into account. Proved is the fact of anomalous growth of uranium under electron irradiation, registered earlier experimentally. It is shown, that in case of acquiring the value Ed=15 eV radiation uranium growth at low levels of burnout can be explained by the complete capture of all the primary radiationn-induced defects into dislocation loops [ru

  14. Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

    DEFF Research Database (Denmark)

    Barlow, P.; Leffers, Torben

    1977-01-01

    Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

  15. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

    Science.gov (United States)

    Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.; Meyler, Boris; Salzman, Y. Joseph

    2018-02-01

    The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm-2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

  16. Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

    Science.gov (United States)

    Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

    2018-01-01

    Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

  17. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  18. Microstructural Parameters in 8 MeV Electron-Irradiated BOMBYX MORI Silk Fibers by Wide-ANGLE X-Ray Scattering Studies (waxs)

    Science.gov (United States)

    Sangappa, Asha, S.; Sanjeev, Ganesh; Subramanya, G.; Parameswara, P.; Somashekar, R.

    2010-01-01

    The present work looks into the microstructural modification in electron irradiated Bombyx mori P31 silk fibers. The irradiation process was performed in air at room temperature using 8 MeV electron accelerator at different doses: 0, 25, 50 and 100 kGy. Irradiation of polymer is used to cross-link or degrade the desired component or to fix the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been computed using wide angle X-ray scattering (WAXS) data and employing line profile analysis (LPA) using Fourier transform technique of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of crystal size, lattice strain and enthalpy parameters.

  19. Studies on color-center formation in glass utilizing measurements made during 1 to 3 MeV electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Levy, P.W.

    1976-01-01

    The coloring of NBS 710 glass has been studied using a new facility for making optical absorption measurements during and after electron irradiation. The induced absorption contains three Gaussian shaped bands. The color center growth curves contain two saturating exponential and one linear components. After irradiation the coloring decays and can be described by three decreasing exponentials. At room temperature both the coloring curve plateau and coloring rate increase with increasing dose rate. Coloring measurements made at a fixed dose rate but at increasing temperature indicate: (1) the coloring curve plateau decreases with increasing temperature and coloring has not been observed at 400 0 C; (2) the plateau is reached more rapidly as the temperature increases; (3) the decay occurring after irradiation cannot be described by Arrhenius kinetics. At each temperature the coloring can be explained by simple kinetics. The temperature dependence of the decay can be explained if it is assumed that the thermal untrapping is controlled by a distribution of activation energies

  20. Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

    Directory of Open Access Journals (Sweden)

    V. G. Vorobiov

    2015-10-01

    Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

  1. The radiation field measurement and analysis outside the shielding of A 10 MeV electron irradiation accelerator

    Science.gov (United States)

    Shang, Jing; Li, Juexin; Xu, Bing; Li, Yuxiong

    2011-10-01

    Electron accelerators are employed widely for diverse purposes in the irradiation-processing industry, from sterilizing medical products to treating gemstones. Because accelerators offer high efficiency, high power, and require little preventative maintenance, they are becoming more and more popular than using the 60Co isotope approach. However, the electron accelerator exposes potential radiation hazards. To protect workers and the public from exposure to radiation, the radiation field around the electronic accelerator must be assessed, especially that outside the shielding. Thus, we measured the radiation dose at different positions outside the shielding of a 10-MeV electron accelerator using a new data-acquisition unit named Mini-DDL (Mini-Digital Data Logging). The measurements accurately reflect the accelerator's radiation status. In this paper, we present our findings, results and compare them with our theoretical calculations. We conclude that the measurements taken outside the irradiation hall are consistent with the findings from our calculations, except in the maze outside the door of the accelerator room. We discuss the reason for this discrepancy.

  2. The radiation field measurement and analysis outside the shielding of A 10 MeV electron irradiation accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Shang Jing [National Synchrotron Radiation Lab, University of Science and Technology of China (China); Li Juexin, E-mail: juexin@ustc.edu.cn [National Synchrotron Radiation Lab, University of Science and Technology of China (China); Xu Bing; Li Yuxiong [National Synchrotron Radiation Lab, University of Science and Technology of China (China)

    2011-10-01

    Electron accelerators are employed widely for diverse purposes in the irradiation-processing industry, from sterilizing medical products to treating gemstones. Because accelerators offer high efficiency, high power, and require little preventative maintenance, they are becoming more and more popular than using the {sup 60}Co isotope approach. However, the electron accelerator exposes potential radiation hazards. To protect workers and the public from exposure to radiation, the radiation field around the electronic accelerator must be assessed, especially that outside the shielding. Thus, we measured the radiation dose at different positions outside the shielding of a 10-MeV electron accelerator using a new data-acquisition unit named Mini-DDL (Mini-Digital Data Logging). The measurements accurately reflect the accelerator's radiation status. In this paper, we present our findings, results and compare them with our theoretical calculations. We conclude that the measurements taken outside the irradiation hall are consistent with the findings from our calculations, except in the maze outside the door of the accelerator room. We discuss the reason for this discrepancy.

  3. Microstructural parameters in 8 MeV Electron irradiated Bombyx mori silk fibers by wide-angle X-ray scattering studies (WAXS)

    International Nuclear Information System (INIS)

    Halabhavi, Sangappa

    2009-01-01

    The present work looks into the microstructural modification in Bombyx mori silk fibers, induced by electron irradiation. The irradiation process was performed in air at room temperature by use of 8 MeV electron accelerators at different doses: 0, 25, 50, 75 and 100 kGy respectively. Irradiation of polymer can be used to crosslink or degrade the desired component or to fixate the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been studied using wide angle X-ray scattering (WAXS) method. The crystal imperfection parameters such as crystallite size , lattice strain (g in %) and enthalpy (a * ) have been determined by line profile analysis (LPA) using Fourier method of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of these parameters. The goodness of the fit and the consistency of these results suggest that the exponential distribution gives much better results, even though lognormal distribution has been widely used to estimate the similar stacking faults in metal oxide compounds. (author)

  4. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    International Nuclear Information System (INIS)

    Lucero, J. F.; Rojas, J. I.

    2016-01-01

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  5. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    Energy Technology Data Exchange (ETDEWEB)

    Lucero, J. F., E-mail: fernando.lucero@hoperadiotherapy.com.gt [Universidad Nacional de Costa Rica, Heredia (Costa Rica); Hope International, Guatemala (Guatemala); Rojas, J. I., E-mail: isaac.rojas@siglo21.cr [Centro Médico Radioterapia Siglo XXI, San José (Costa Rica)

    2016-07-07

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  6. Polarized electrons from GaAs for parity nonconservation studies and Moeller scattering at 250 MeV

    International Nuclear Information System (INIS)

    Cates, G.D. Jr.

    1987-01-01

    A description is given of a polarized electron source based on photoemission from GaAs with circularly polarized light, which was developed for use in the study of parity nonconservation (PNC) in e- 12 C scattering at 250 MeV at the MIT Bates Linear Accelerator Center. A multi-chamber vacuum system houses up to four GaAs crystals simultaneously, and is contained in a Faraday cage to provide 365 KeV in electrostatic acceleration. Stable operation is achieved through the use of a modulated cw laser. The PNC experiment is discussed, particularly with regards to its requirements on the source. The peak current from the source is 20 mA, resulting in a current in excess of 6 mA at high energy. The electron beam polarization has been measured to be 0.36 ± 0.004 using Moeller scattering at 250 MeV

  7. Strain buildup in GaAs due to 100 MeV Ag ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

    2013-12-01

    The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

  8. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  9. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

    2012-01-01

    Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  10. Temperature-dependent photoluminescence analysis of 1-MeV electron irradiation-induced nonradiative recombination centers in GaAs/Ge space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tiancheng, Yi; Pengfei, Xiao; Yong, Zheng; Juan, Tang; Rong, Wang, E-mail: wangr@bnu.edu.cn

    2016-03-01

    The effects of irradiation of 1-MeV electrons on p{sup +}–n GaAs/Ge solar cells have been investigated by temperature-dependent photoluminescence (PL) measurements in the temperature range of 10–290 K. The temperature dependence of the PL peak energy agrees well with the Varnish relation, and the thermal quenching of the total integrated PL intensity is well explained by the thermal quenching theory. Meanwhile, the thermal quenching of temperature-dependent PL confirmed that there are two nonradiative recombination centers in the solar cells, and the thermal activation energies of these centers are determined by Arrhenius plots of the total integrated PL intensity. Furthermore, the nonradiative recombination center, as a primary defect, is identified as the H3 hole trap located at E{sub v} + 0.71 eV at room temperature and the H2 hole trap located at E{sub v} + 0.41 eV in the temperature range of 100–200 K, by comparing the thermal activation and ionization energies of the defects.

  11. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  12. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  13. Electron irradiation of zeolites

    International Nuclear Information System (INIS)

    Wang, S.X.; Wang, L.M.; Ewing, R.C.

    1999-01-01

    Three different zeolites (analcime, natrolite, and zeolite-Y) were irradiated with 200 keV and 400 keV electrons. All zeolites amorphized under a relatively low electron fluence. The transformation from the crystalline-to-amorphous state was continuous and homogeneous. The electron fluences for amorphization of the three zeolites at room temperature were: 7.0 x 10 19 e - /cm 2 (analcime), 1.8 x 10 20 e - /cm 2 (natrolite), and 3.4 x 10 20 e - /cm 2 (zeolite-Y). The different susceptibilities to amorphization are attributed to the different channel sizes in the structures which are the pathways for the release of water molecules and Na + . Natrolite formed bubbles under electron irradiation, even before complete amorphization. Analcime formed bubbles after amorphization. Zeolite-Y did not form bubbles under irradiation. The differences in bubble formation are attributed to the different channel sizes of the three zeolites. The amorphization dose was also measured at different temperatures. An inverse temperature dependence of amorphization dose was observed for all three zeolites: electron dose for amorphization decreased with increasing temperature. This unique temperature effect is attributed to the fact that zeolites are thermally unstable. A semi-empirical model was derived to describe the temperature effect of amorphization in these zeolites

  14. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  15. Positron lifetime studies of electron irradiated copper

    International Nuclear Information System (INIS)

    Hadnagy, T.D.

    1976-01-01

    Single-crystal copper was irradiated with 4.5-MeV electrons producing simple Frenkel defects as well as a significant concentration of divacancies. Mean positron lifetime characteristics, which are sensitive to the presence of vacancies and multivacancies in copper, was monitored after isochronal anneals between 80 and 800 0 K to determine the relative change of characteristic mean lifetimes and their associated intensities. Also a study of the dependence of the mean positron lifetime on the total electron fluence was made and compared with existing theories relating these lifetimes to vacancy or multivacancy concentrations. Numerical data from curve fitting procedures using a conventional trapping model for defect-induced changes in positron lifetimes indicate that upon irradiation with 4.5-MeV electrons at 80 0 K, about 8 percent of the defects produced are divacancy units. Divacancy units appear to be several times more effective in trapping positrons than are monovacancies. Further, the experimental data suggest that the stage III annealing processes in electron-irradiated copper most probably involve the motion and removal of both monovacancies and divacancies. A conglomerate (multivacancy) unit appears to exist as a stable entity even after annealing procedures are carried out at temperatures slightly above the stage III region. Such a stable unit could serve as a nucleation center for the appearance of voids

  16. Exfoliation of GaAs caused by MeV 1H and 4He ion implantation at left angle 100 right angle , left angle 110 right angle axial and random orientations

    International Nuclear Information System (INIS)

    Rauhala, E.; Raeisaenen, J.

    1994-01-01

    The exfoliation procedure of the ion range determination of gaseous implants in single crystal GaAs is investigated. The correlation of the observed crater depth with the ion range is studied for random, left angle 100 right angle and left angle 110 right angle axial orientation high dose implantations of 1.5-2.5 MeV 1 H and 4 He ions. Depending on the experimental conditions, the crater depths corresponded to range values between the modal range and the range maximum. The observed crater depths could be related to the actual He concentration depth distributions by determining the profiles of the 4 He implants by 2.7 MeV proton backscattering. The implantation parameters affecting the exfoliation process, and especially the increase rate of the sample temperature, are investigated. The range distribution parameters for the 1.5 MeV 4 He implants are presented. ((orig.))

  17. Positron lifetime measurements on electron irradiated amorphous alloys

    International Nuclear Information System (INIS)

    Moser, P.; Hautojaervi, P.; Chamberod, A.; Yli-Kauppila, J.; Van Zurk, R.

    1981-08-01

    Great advance in understanding the nature of point defects in crystalline metals has been achieved by employing positron annihilation technique. Positrons detect vacancy-type defects and the lifetime value of trapped positrons gives information on the size of submicroscopic vacancy aglomerates and microvoids. In this paper it is shown that low-temperature electron irradiations can result in a considerable increase in the positron lifetimes in various amorphous alloys because of the formation of vacancy-like defects which, in addition of the pre-existing holes, are able to trap positrons. Studied amorphous alloys were Fe 80 B 20 , Pd 80 Si 20 , Cu 50 Ti 50 , and Fe 40 Ni 40 P 14 B 6 . Electron irradiations were performed with 3 MeV electrons at 20 K to doses around 10 19 e - /cm 2 . After annealing positron lifetime spectra were measured at 77 K

  18. Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Gou, J.; Imazumi, M.; Yamaguchi, M.

    2007-01-01

    The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center

  19. Comparison of initial damage rates using neutron and electron irradiations

    International Nuclear Information System (INIS)

    Goldstone, J.A.R.

    1978-08-01

    The purpose of this experiment was twofold: (1) The number of interstitials that pin dislocations was studied as a function of neutron energy. (2) By comparison with electron irradiations on the sample, a correlation between the predicted and measured numbers of defects was found. All irradiations were performed on the same high purity copper sample. The sample was machined in the form of a cantilever beam with a flexural resonant frequency of 770 Hz. Changes in Young's modulus at constant strain amplitude were monitored continuously through changes in the resonant frequency of the sample. These changes in the modulus can be related to the number of pinning points added to dislocation lines, which are in turn related to the number of free interstitials produced. Neutron energy dependence experiments were done from 2 to 24 MeV on the copper sample and at 14 MeV on a gold sample. By equating pinning rates from electron and neutron irradiations and using the free interstitial production rate obtained from electron irradiations, an estimate of the free interstitial production cross section for neutrons of 2 to 24 MeV was made

  20. Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

    International Nuclear Information System (INIS)

    Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

    2004-01-01

    Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

  1. Segregation of a copper-nickel alloy after electron irradiation

    International Nuclear Information System (INIS)

    Wagner, W.

    1979-09-01

    In the present work measurement of diffuse neutron scattering are used to determine short range segregation effects of the alloy Cu 0 sub(.) 414 Ni 0 sub(.) 586 after thermal annealing and 3 MeV electron irradiation in the temperature range between 370 K and 600 K. In addition neutron small angle scattering measurement are performed after irradiation to study possible long range segregation effects. Residual resistivity measurements are performed in parallel in order tp orientate the relatively expensive neutron scattering measurements with respect to the residual changes (orig./KBI) [de

  2. Growth rate of dislocation loop in Fe-Ni-Cr alloy under Kr+ ion and electron irradiation

    International Nuclear Information System (INIS)

    Kimoto, T.; Allen, C.W.; Rehn, L.E.

    1991-10-01

    In order to examine the effect of irradiating particle species on the growth rate of radiation-induced dislocation loops, a solution-annealed Fe-25Ni-15Cr-0.02C alloy was irradiated at 723 K first by 1.5 MeV Kr + ions for 2520 sec, then by 1.5 MeV Kr + ions and 1.0 MeV electrons simultaneously for 780 sec, and finally by 1.0 MeV electrons for 780 sec with the HVEM-Tandem Facility in Argonne National Laboratory. The calculated damage rate by 1.5 MeV Kr + ions was 5.8 x 10 -4 dpa/s, and that by 1.0 MeV electrons was 1 x 10 -4 dpa/s. The growth rate of a dislocation loop located at the center of the specimen was 7 x 10 -3 nm/s for the Kr + ion irradiation, 4 x 10 -2 nm/s for the simultaneous Kr + and electron irradiation, and (2--3) x 10 -2 nm/s for the electron irradiation. This implies that the electron irradiation is about 19 times more effective in the growth of radiation-induced dislocation loops than the Kr + ion irradiation. The dislocation loop growth rate under the simultaneous Kr + and electron irradiation is higher than the sum of the growth rates under the individual Kr + and electron irradiations. 5 refs., 4 figs

  3. Amorphization of Zr3Al by hydrogenation and subsequent electron irradiation

    International Nuclear Information System (INIS)

    Meng, W.J.; Koike, J.; Okamoto, P.R.; Rehn, L.E.

    1988-12-01

    1-MeV electron irradiation of hydrogenated Zr 3 Al (Zr 3 AlH/sub 0.96/) at 10K is studied. A more than 20 fold reduction in the critical dose required for complete amorphization is observed for the hydrogenated specimen as compared to the un-hydrogenated Zr 3 Al under identical irradiation conditions. 11 refs., 4 figs

  4. Dissociated Structure of Dislocation Loops with Burgers Vector alpha in Electron-Irradiated Cu-Ni

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Leffers, Torben; Barlow, P.

    1977-01-01

    The rectangular dislocation loops with total Burgers vector a100 which are formed in Cu-Ni alloys during 1 MeV electron irradiation at elevated temperatures have been examined by weak-beam electron microscopy. The loop edges were found to take up a Hirth-lock configuration, dissociating into two ...

  5. In-situ studies on phase transformations under electron irradiation in ...

    Indian Academy of Sciences (India)

    M. Senthilkumar (Newgen Imaging) 1461 1996 Oct 15 13:05:22

    under 1 MeV electron irradiation at 300 K has been recorded in HVEM experiments. The similarity of the diffuse intensity distribution in these two cases brings out the importance of the lattice collapse mechanism in both the cases. 2. Crystallography of the ordered phases in Ni–Mo system. The equilibrium phase diagram of ...

  6. Investigations on the optical, thermal and surface modifications of electron irradiated L-threonine single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh Kumar, G.; Gokul Raj, S. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India); Bogle, K.A.; Dhole, S.D.; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Mohan, R. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India)], E-mail: professormohan@yahoo.co.in

    2008-06-15

    L-Threonine single crystals have been irradiated by 6 MeV electrons. Irradiated crystals at various electron fluences were subjected to various techniques such as UV-vis-NIR, atomic force microscopy (AFM) and thermomechanical analyses. Thermal strength of the irradiated crystals has also been studied through differential scanning calorimetry (DSC) measurements. The results have been discussed in detail.

  7. Silver nanoparticles: synthesis and size control by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

    2006-07-14

    Silver nanoparticles were synthesized by irradiating solutions, prepared by mixing AgNO{sub 3} and poly-vinyl alcohol (PVA), with 6 MeV electrons. The electron-irradiated solutions and the thin coatings cast from them were characterized using the ultraviolet-visible (UV-vis), x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) techniques. During electron irradiation, the process of formation of the silver nanoparticles appeared to be initiated at an electron fluence of {approx}2 x 10{sup 13} e cm{sup -2}. This was evidenced from the solution, which turned yellow and exhibited the characteristic plasmon absorption peak around 455 nm. Silver nanoparticles of different sizes in the range 60-10 nm, with a narrow size distribution, could be synthesized by varying the electron fluence from 2 x 10{sup 13} to 3 x 10{sup 15} e cm{sup -2}. Silver nanoparticles of sizes in the range 100-200 nm were also synthesized by irradiating an aqueous AgNO{sub 3} solution with 6 MeV electrons.

  8. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  9. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    International Nuclear Information System (INIS)

    Lu, L W; So, C K; Zhu, C Y; Gu, Q L; Fung, S; Ling, C C; Li, C J; Brauer, G; Anwand, W; Skorupa, W

    2008-01-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm −2 , and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm −2 . Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm −2 , the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed

  10. Monte Carlo study of electron irradiation effect on YBCO dpa profiles

    International Nuclear Information System (INIS)

    Pinnera, I.; Cruz, C.; Abreu, Y.; Leyva, A.; Van Espen, P.

    2011-01-01

    The Monte Carlo assisted Classical Method (MCCM) consists on a calculation procedure for determining the displacements per atom (dpa) distribution in solid materials. This algorithm allows studying the gamma and electron irradiation damage in different materials. It is based on the electrons elastic scattering classic theories and the use of Monte Carlo simulation for the physical processes involved. The present study deals with the Monte Carlo simulation of electron irradiation effects on YBa 2 Cu 3 O 7-x (YBCO) slabs using the MCNPX code system. Displacements per atom distributions are obtained through the MCCM for electron irradiation up to 10 MeV. In-depth dpa profiles for electrons and positrons are obtained and analyzed. Also, for each atomic species in the material, the dpa distributions are calculated. All the results are discussed in the present contribution. (Author)

  11. Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

    1994-01-01

    Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

  12. Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

    1994-10-10

    Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

  13. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    Science.gov (United States)

    Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

    2008-09-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

  14. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1994-11-01

    Previous investigations using 40 Ar ion bombardments have revealed that Zr 3 Fe, which has an orthorhombic crystal structure, undergoes an irradiation-induced transformation from the crystalline to the amorphous state. In the present investigation, 0.9 MeV electron irradiations were performed at 28 - 220 K in a high-voltage electron microscope (HVEM). By measuring the onset, spread and final size of the amorphous region, factoring in the Gaussian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼ 220 K, compared with 570 - 625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the dose-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a given dose, the final size decreasing with increasing temperature, and it is argued that this is related to the existence of a critical dose rate, which increases with temperature, and below which no amorphization occurs. (author). 26 refs., 6 figs

  15. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1992-10-01

    0.9 MeV electron irradiations were performed at 28--220 K in a high-voltage electron microscope (HVEM). By measuring onset, spread and final size of the amorphous region, factoring in the Guassian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼220 K, compared to 570--625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the does-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a region dose, the final size decreasing with increasing temperature, and it was argued that this is related to the existence of a critical dose rate, which increased with temperature, below which no amorphization occurred. The above observations can be understood in the framework of the kinetics of damage accumulation under irradiation

  16. Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

    International Nuclear Information System (INIS)

    Schlossmacher, P.; Stober, T.

    1995-01-01

    In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

  17. Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

    International Nuclear Information System (INIS)

    Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

    2014-01-01

    The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

  18. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  19. Electron-irradiation-induced phase transformation in alumina

    International Nuclear Information System (INIS)

    Chen, C.L.; Arakawa, K.; Lee, J.-G.; Mori, H.

    2010-01-01

    In this study, electron-irradiation-induced phase transformations between alumina polymorphs were investigated by high-resolution transmission electron microscopy. It was found that the electron-irradiation-induced α → κ' phase transformation occurred in the alumina under 100 keV electron irradiation. It is likely that the knock-on collision between incident electrons and Al 3+ cations is responsible for the occurrence of electron-irradiation-induced phase transformation from α-alumina to κ'-alumina.

  20. Positron annihilation in hydrogenated and electron-irradiated titanium alloys

    International Nuclear Information System (INIS)

    Mukashev, K.M.; Zaikin, Yu.A.

    2002-01-01

    Important information on hydrogen behavior in titanium can be obtained from studies of radiation damage in previously hydrogenated metal. For this purpose annealed titanium samples were hydrogenated at the temperature 500 deg. C during 1 hour. Then both the original annealed samples and hydrogenated samples were irradiated by 4 MeV electrons in the fluence range 3·10 7 -1·10 19 cm - 2 at the temperature 60 deg. C. It is known that electron irradiation in these conditions predominantly creates vacancy-type defects with an average radius R ν =0.81 Angstrom. It was stated that annihilation probability after electron irradiation of previously hydrogenated titanium samples always has some intermediate values between those characteristic for hydrogenated and irradiated states of previously annealed metal. This is a reason to suppose that radiation defects of the vacancy type in previously hydrogenated titanium combine with hydrogen atoms in favorable conditions of their partial ionization. The estimated value of the average radius for such a complex is R ν =1.1 Angstrom, that is higher than vacancy size but lower than an atom radius. No dose dependence of hydrogen interaction with radiation defects was observed in our experiments.The results of isochrone annealing of the materials under study have shown that the single annealing recovery stage with activation energy E a equal to 1.22 eV is observed in electron irradiated but not previously hydrogenated titanium in the temperature range 170-240 deg. C. Electron irradiation of the previously hydrogenated metal shifts beginning of the first recovery stage to the temperature about 225-230 deg. C and finishes near the temperature 330 deg. C. Therefore, the bound state vacancy-hydrogen in titanium is characterized by higher temperature range of dissociation and annealing with activation energy equal to 1.38 eV. However, subsequent measurements, of the angular distribution of annihilation photons (ADAP) have demonstrated

  1. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  2. Defect studies in electron-irradiated ZnO and GaN

    International Nuclear Information System (INIS)

    Tuomisto, F.; Look, D.C.; Farlow, G.C.

    2007-01-01

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K

  3. Defect studies in electron-irradiated ZnO and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, F. [Laboratory of Physics, Helsinki University of Technology, 02015 TKK Espoo (Finland)], E-mail: filip.tuomisto@tkk.fi; Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States); Farlow, G.C. [Physics Department, Wright State University, Dayton, OH 45435 (United States)

    2007-12-15

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K.

  4. Electron irradiation induced deep centers in hydrothermally grown ZnO

    International Nuclear Information System (INIS)

    Fang, Z.-Q.; Claflin, B.; Look, D. C.; Farlow, G. C.

    2007-01-01

    An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ∼10 8 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to Li Zn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to V Zn

  5. Multiwalled carbon nanotube destruction in the radiation damages to electron irradiation

    Directory of Open Access Journals (Sweden)

    T. M. Pinchuk-Rugal’

    2015-10-01

    Full Text Available Behavior of the X-ray diffraction and vibrational Raman spectra of multiwalled carbon nanotubes (MWCNT under high-energy electron irradiation (Ee = 1.8 MeV with large doses of absorption to 10 MGy were studied. With increasing dose uptake to 10.0 MGy, the interlayer correlation in the distribution of the individual graphene nanotubes nets not only is maintained, but is even improved. Defective bands D, D' and G band with increasing dose absorption have significant transformation, which show radiation damages of MWCNT. The destruction of nanotubes under electron irradiation is accompanied by increased regulation in the arrangement of individual nanotubes by interlayer cross-links involving interstitial atoms. The severity of degradation and cross-linking of MWCNT depends on the electron absorption dose.

  6. H2 formation by electron irradiation of SBA-15 materials and the effect of Cu(II) grafting

    International Nuclear Information System (INIS)

    Brodie-Linder, N.; Le Caer, S.; Shahdo Alam, M.; Renault, J.P.; Alba-Simionesco, Ch.

    2010-01-01

    Measurement of H 2 production from electron irradiation (10 MeV) on SBA-15 materials has shown that adsorbed water is attacked preferentially. Silanol groups are only attacked when they are in the majority with respect to adsorbed water, however they are much less efficient at producing H 2 . The comparison between water content before and after electron irradiation and the corresponding H 2 production indicates that water desorption is the main route to adsorbed water loss for SBA-15 materials. On the other hand, surface silanol groups are more susceptible to attack,leading to H 2 production when SBA-15 samples have undergone extensive thermal treatment. Electron irradiation of SBA-15-Cu materials has shown that the presence of Cu(II) on the surface reduces and inhibits the production of H 2 . This inhibiting power affects adsorbed water bonded to grafted copper but not surface silanol groups. (authors)

  7. Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

    2005-01-01

    In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

  8. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  9. Rotational total skin electron irradiation with a linear accelerator

    Science.gov (United States)

    Evans, Michael D.C.; Devic, Slobodan; Parker, William; Freeman, Carolyn R.; Roberge, David; Podgorsak, Ervin B.

    2008-01-01

    The rotational total skin electron irradiation (RTSEI) technique at our institution has undergone several developments over the past few years. Replacement of the formerly used linear accelerator has prompted many modifications to the previous technique. With the current technique, the patient is treated with a single large field while standing on a rotating platform, at a source‐to‐surface distance of 380 cm. The electron field is produced by a Varian 21EX linear accelerator using the commercially available 6 MeV high dose rate total skin electron mode, along with a custom‐built flattening filter. Ionization chambers, radiochromic film, and MOSFET (metal oxide semiconductor field effect transistor) detectors have been used to determine the dosimetric properties of this technique. Measurements investigating the stationary beam properties, the effects of full rotation, and the dose distributions to a humanoid phantom are reported. The current treatment technique and dose regimen are also described. PACS numbers: 87.55.ne, 87.53.Hv, 87.53.Mr

  10. Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1)

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by γ-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H 50 according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from 40 K contained in the samples. (author)

  11. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    Energy Technology Data Exchange (ETDEWEB)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E

    2000-07-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of {approx}450 deg C. After irradiation, the samples contained needle-like {beta}-Nb precipitates in the {alpha}-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D{sub 2}O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D{sub 2}0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D{sub 2}O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure

  12. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    International Nuclear Information System (INIS)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E.

    2000-01-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of ∼450 deg C. After irradiation, the samples contained needle-like β-Nb precipitates in the α-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D 2 O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D 2 0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D 2 O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure tube materials. Thus, 10-MeV

  13. Electron irradiation-induced defects in ZnO studied by positron annihilation

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sakai, S.; Naramoto, H.

    2006-01-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10 18 cm -2 . The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V Zn related defects. Most of these vacancies are annealed at temperatures below 200 o C. However, after annealing at around 400 o C, secondary defects are produced. All the vacancy defects are annealed out at around 700 o C

  14. Effect of electron irradiation on hatchability and broiler performance of hatching eggs

    International Nuclear Information System (INIS)

    Castaneda, S.M.P.; Tellez, I.G.; Sanchez, R.E.; Quintana, L.J.A.; Bustos, R.E.

    1996-01-01

    The irradiation of foods employs the electromagnetic ionizing energy, and the gamma ray, the X ray and the electrons are used. The electrons are reduced mass particles and have negative electric charge. The difference between the gamma rays, X-ray and electron is the penetration level. The effective range on penetration of electron accelerator depends on the energy level, in practice the penetation of an electron beam in the foods is 5 mm for MeV. The objectives of this work were to evaluate the effects of electron irradiation on the hatchability, and to evaluate the productive parameters of chicken hatching from egg irradiated with electrons. (author). 15 refs., 6 tabs

  15. ESR studies of electron irradiated K3Ir(CN)6 in KCl single crystals

    International Nuclear Information System (INIS)

    Vugman, N.V.; Pinhal, N.M.

    1983-01-01

    ESR studies of KCl single crystals doped with small amounts of K 3 Ir(CN) 6 and submitted to a prolongued 2 MeV electron irradiation at room temperature reveal the presence of the [IR(CN) 5 Cl] 4- and [Ir(CN) 4 Cl 2 ] 4- new molecular species. Ligand spin densities and ligand field parameters are calculated from the experimental hyperfine and superhyperfine interactions and compared to previous data on the [Ir(CN) 5 ] 4- species. (Author) [pt

  16. Electron irradiation-induced defects in ZnO studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: zhiquanchen@hotmail.com; Maekawa, M. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sakai, S. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2006-04-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10{sup 18} cm{sup -2}. The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V {sub Zn} related defects. Most of these vacancies are annealed at temperatures below 200 {sup o}C. However, after annealing at around 400 {sup o}C, secondary defects are produced. All the vacancy defects are annealed out at around 700 {sup o}C.

  17. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

    Science.gov (United States)

    Knutsen, K. E.; Galeckas, A.; Zubiaga, A.; Tuomisto, F.; Farlow, G. C.; Svensson, B. G.; Kuznetsov, A. Yu.

    2012-09-01

    By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ˜1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.

  18. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  19. Linearity of photoconductive GaAs detectors to pulsed electrons

    International Nuclear Information System (INIS)

    Ziegler, L.H.

    1995-01-01

    The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined

  20. Electron irradiation effects on lithium peroxide

    Science.gov (United States)

    Kikkawa, Jun; Shiotsuki, Taishi; Shimo, Yusuke; Koshiya, Shogo; Nagai, Takuro; Nito, Takehiro; Kimoto, Koji

    2018-03-01

    In this study, electron irradiation effects on lithium peroxide (Li2O2), which is an important discharge product of Li-air (or Li-O2) batteries, were investigated using selected-area electron diffraction (SAED) and high-energy resolution electron energy-loss spectroscopy (EELS). The results obtained show that Li2O2 to Li2O transformation occurs with 80 and 300 keV incident electrons under high electron dose rates at 20 and -183 °C. The Li2O2 to Li2O transformation rate for 300 keV was 1/5 of that for 80 keV with the irradiation taking place at -183 °C. We also present a series of the EELS spectra that can be used as a criterion to judge the molar ratio of Li2O to Li2O2 in the general systems where Li2O2 and Li2O coexist.

  1. Electron irradiation of dry food products

    International Nuclear Information System (INIS)

    Gruenewald, Th.

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system. (author)

  2. Thermal conductivity of electron-irradiated graphene

    Science.gov (United States)

    Weerasinghe, Asanka; Ramasubramaniam, Ashwin; Maroudas, Dimitrios

    2017-10-01

    We report results of a systematic analysis of thermal transport in electron-irradiated, including irradiation-induced amorphous, graphene sheets based on nonequilibrium molecular-dynamics simulations. We focus on the dependence of the thermal conductivity, k, of the irradiated graphene sheets on the inserted irradiation defect density, c, as well as the extent of defect passivation with hydrogen atoms. While the thermal conductivity of irradiated graphene decreases precipitously from that of pristine graphene, k0, upon introducing a low vacancy concentration, c reduction of the thermal conductivity with the increasing vacancy concentration exhibits a weaker dependence on c until the amorphization threshold. Beyond the onset of amorphization, the dependence of thermal conductivity on the vacancy concentration becomes significantly weaker, and k practically reaches a plateau value. Throughout the range of c and at all hydrogenation levels examined, the correlation k = k0(1 + αc)-1 gives an excellent description of the simulation results. The value of the coefficient α captures the overall strength of the numerous phonon scattering centers in the irradiated graphene sheets, which include monovacancies, vacancy clusters, carbon ring reconstructions, disorder, and a rough nonplanar sheet morphology. Hydrogen passivation increases the value of α, but the effect becomes very minor beyond the amorphization threshold.

  3. Electron irradiation of dry food products

    Energy Technology Data Exchange (ETDEWEB)

    Gruenewald, Th [Bundesbahn-Zentralamt, Minden (Germany, F.R.)

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system.

  4. Using electron irradiation to probe iron-based superconductors

    Science.gov (United States)

    Cho, Kyuil; Kończykowski, M.; Teknowijoyo, S.; Tanatar, M. A.; Prozorov, R.

    2018-06-01

    High-energy electron irradiation at low temperatures is an efficient and controlled way to create vacancy–interstitial Frenkel pairs in a crystal lattice, thereby inducing nonmagnetic point-like scattering centers. In combination with London penetration depth and resistivity measurements, the electron irradiation was used as a phase-sensitive probe to study the superconducting order parameter in iron-based superconductors (FeSCs), lending strong support to sign-changing s ± pairing. Here, we review the key results of the effect of electron irradiation in FeSCs.

  5. Changing in tool steels wear resistance under electron irradiation

    International Nuclear Information System (INIS)

    Braginskaya, A.E.; Manin, V.N.; Makedonskij, A.V.; Mel'nikova, N.A.; Pakchanin, L.M.; Petrenko, P.V.

    1983-01-01

    The tool steels and alloys wear resistance under dry friction after electron irradiation has been studied. Electron irradiation of a wide variety of steels is shown to increase wear resistance. In this case phase composition and lattice parameters changes are observed both in matrix and carbides. The conclusion is drawn that an appreciable increase of steel wear resistance under electron irradiation can be explained both by carbide phase volume gain and changes in it's composition and the formation of carbide phase submicroscopic heterogeneities and, possibly, complexes of defects

  6. Simulation model for electron irradiated IGZO thin film transistors

    Science.gov (United States)

    Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

    2018-02-01

    An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

  7. Dose distributions in electron irradiated plastic tubing

    International Nuclear Information System (INIS)

    Miller, A.; Pederson, W.B.

    1981-01-01

    Plastic tubes have been crosslinked by irradiation at a 10 MeV linear electron accelerator and at a 400 keV DC electron accelerator at different irradiation geometries. The diameter of the different tubes was 20, 33 and 110 millimeters. Dose distributions have been measured with thin radiochromic dye films, indicating that in all cases irradiation from two sides is a necessary and sufficient condition for obtaining a satisfactory dose distribution. (author)

  8. Vacancies and negative ions in GaAs

    International Nuclear Information System (INIS)

    Corbel, C.

    1991-01-01

    We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration

  9. Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2)

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    In order to check radioactivity of beta-emmitters produced by (γ, n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2π gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the β-activities were detected. From the amount of observed radioactivities of β-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from 40 K contained in the samples and, hence, its biological effects should be negligible. (author)

  10. Stress relaxation under cyclic electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Reznitskij, M.E.

    1990-01-01

    The kinetics of deformation process in a relaxating sample under 2 MeV electron cyclic irradiation was studied experimentally. The Al-Mg alloys with controllable and different (in dislocation density precipitate presence and their character) structure were used in experiments. It was established that after the beam was switched on the deformation rate increased sharply and then, during prolonged irradiation, in a gradual manner. After the switching-off the relaxation rate decreases by jumps up to values close to extrapolated rates of pre-radiation relaxation. The exhibition of these effects with radiation switching-off and switchin-on is dependent on the initial rate of thermal relaxation, the test temperature, the preliminary cold deformation and the dominating deformation dislocation mechanism. The preliminary cold deformation and test temperature elevation slightly decrease the effect of instantaneous relaxation acceleration with the irradiation switch-on. 17 refs., 5 figs

  11. User Support of Electron Irradiation Facility

    International Nuclear Information System (INIS)

    Park, S. H.; Cha, H. K.; Lee, B. C.

    2007-06-01

    The KAERI (Korean Atomic Energy Research Institute) high-power electron beam irradiation facility, operating at the energies between 0.3 MeV and 10 MeV,has provided irradiation services to users in industries, universities, and institutes via 'Project of utilization and cooperation of users of a large research facility' since 2004. A great attraction of many researchers, almost 750 persons so far according to surveys, to e-beam irradiation technology as well as the growth of participants on Workshop on Electron Beam Applications from 121 to 176 indicate the increase of demands of irradiation service. Comparing to the cases of advanced nations in this area, such as America, Japan, China, and Russia, Korea is relatively much behind in radiation technology. It is mainly due to the lack of governmental supports and investments. Active support and investment on construction and operation of electron beam user facilities would be principal factors on developments of advanced technologies. In this project, we would like to satisfy users' requests by developing the effective managing and operating system for prompt services, processes, and QA and to ultimately assist users to create additional new results, by maximizing the utilization of all available resources and activating the developments of technologies of electron beam processing

  12. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  13. Detection of defects in electron-irradiated synthetic silica quartz probed by positron annihilation

    International Nuclear Information System (INIS)

    Watauchi, Satoshi; Uedono, Akira; Ujihira, Yusuke; Yoda, Osamu.

    1994-01-01

    Defects in amorphous SiO 2 films, formed on MOS(metal/oxide/semiconductor) devices as gates, perturb its operation. The positron annihilation techniques, were applied to the study of the annealing behavior of the defects, introduced in the high purity synthetic quartz glass by the irradiation of 3-MeV electrons up to the 1x10 18 e - /cm 2 dosage. It was proved that the positron annihilation techniques were sufficiently sensitive to detect the defects in the electron-irradiated silica glasses. Three types of open-space defects were detected by the positron lifetime measurements. These can be attributed to monovacancy or divacancy type defects, vacancy clusters, and open-volume defects. A high formation probability (∼90%) of positroniums(Ps) was found in unirradiated specimens. These Ps were considered to be formed in open-volume defects. The formation probability of Ps was drastically decreased by the electron irradiation. But the size of open-volume defects was kept unchanged by the irradiation. These facts suggest that vacancy-type defects were introduced by the electron irradiation and that positrons were trapped in these defects. By the isochronal annealing in nitrogen atmosphere, the lifetime component (τ 2 ) and its relative intensity (I 2 ), attributed to positrons trapped in monovacancy or divacancy type defects and annihilated there, changed remarkably. τ 2 was constant in the temperature range up to 300degC, getting slightly shorter between 300degC and 700degC, and constant above 700degC. I 2 decreased gradually up to 300degC, constant between 300degC and 550degC, decreased above 550degC, and constant above 700degC. This revealed that the behavior of the defects, in which positrons were trapped, change by the elevation of the annealing temperature. (author)

  14. Investigation of influence of electronic irradiation on photoluminescence spectrum and ir-spectrum of porous silicon

    International Nuclear Information System (INIS)

    Daineko, E.A.; Dihanbayev, K.K.; Akhtar, P.; Hussain, A.

    2007-01-01

    In this article we study the influence of 2-Mev electron irradiation on porous silicon (PS). Photoluminescence (PL) spectrum and IR-spectrum have been done on both newly-prepared PS samples and samples prepared a year ago after the irradiation. We analyzed PL spectrum for both types of PS samples. The experimental results suggest that the peak position in PL spectrum decreases for newly-prepared PS samples. The size of the nanocrystals calculated by the method of singling out of spectrum components was equal to 3.0-3.2 nm. Porosity of the samples was 60-75%. From IR-spectrum of newly-prepared PS samples wide absorption band was observed at 1100 cm/sup -1/ (Si-O-Si bond). Another peak of Si-O-Si group was observed at 850 cm/sub -1/. Also hydrogen absorption bands were appearing from 2000 to 2200 cm/sup -1/, corresponding to vibration modes SiH, SiH/sub 2/, SiH/sub 3/. As a result of electron irradiation the PL intensity of newly-prepared PS samples decreases abruptly by a factor of 30 without peak shifting. As for the samples prepared a year ago we observed a decrease in the PL intensity by 25-30%. From IR-spectrum of PS samples prepared a year ago it was shown that the intensity of bridge bonds corresponding to absorption band 850 cm/sup -1/, decreases gradually. Our experimental data shows that PS samples stored for longer time have better radiation resistant properties than the newly-prepared PS samples due to the replacement of Si-H bonds with more resistant Si-O bonds. Porous silicon, electrochemical anodizing, photoluminescence spectrum, IR-spectrum, electronic irradiation. (author)

  15. Recovery of electron irradiated V-Ga alloys

    International Nuclear Information System (INIS)

    Leguey, T.; Monge, M.; Pareja, R.; Hodgson, E.R.

    2000-01-01

    The recovery characteristics of electron-irradiated V-Ga alloys with 1.2 and 4.6 at.% Ga have been investigated by positron annihilation spectroscopy (PAS). It is found that vacancies created by electron irradiation become mobile in these alloys at ∼293 K. This temperature is noticeably lower than that in pure V and V-Ti alloys. The vacancies aggregate into microvoids in V-4.6Ga, but do not in V-1.2Ga. The results indicate that vacancies are bound to Ga-interstitial impurity pairs

  16. Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

    International Nuclear Information System (INIS)

    Baliga, B.J.; Walden, J.P.

    1983-01-01

    Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

  17. Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1); [gamma]-ray measurement

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1994-02-01

    Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by [gamma]-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (author).

  18. Structural and Optical Changes of Poly-Vinylidene Fluoride by Electron Irradiation at High Dose Rate

    International Nuclear Information System (INIS)

    Jaleh, B.; Fakhri, P.; Borhani, M.; Habibi, S.; Noroozi, M.

    2012-01-01

    Poly-vinylidene fluoride films were prepared and irradiated by 10MeV electrons at different doses ranging from 50 to 300kGy with a dose rate of 10kGy/s. The FTIR results indicated that no major phase content change was observed. The optical absorption spectra indicated that the electron irradiation results in shifting of the absorption peak, appearance of a new peak and increasing the band gap (Eg). These changes may be due to the breaking of polymer chains and creation of new defects. The X-ray diffraction analysis of samples indicated that the crystallinity did not show any major changes. Concerning the gel fraction measurements, it was observed that gel fraction increases with increasing the dose, where it is an indication of the formation of cross-linked films.

  19. A study of point defects created by electron irradiation of dilute iron-carbon alloys

    International Nuclear Information System (INIS)

    Leveque, J.L.

    1969-10-01

    Resistivity and magnetic after effect (m.a.e.) measurements are used to study the influence of carbon atoms on the annealing process of point defects created by electron irradiation (3 MeV) at low temperature (20 deg. K). The presence of the carbon atoms has a strong influence on the recovery sub-stage I E and stage III. For the former, the carbon impurity traps the freely migrating iron interstitial. For the latter the effect is interpreted as being due to formation during annealing, of a carbon vacancy pair. A pronounced m.a.e. band is attributed to the reorientation of this carbon vacancy complex. All these results are coherent with the interpretation of a low temperature migrating free interstitial. (author) [fr

  20. Dielectric properties during electron irradiation of alternative materials for gyrotron windows

    International Nuclear Information System (INIS)

    Vila, R.; Ibarra, A.; Hodgson, E.R.

    1996-01-01

    Recent work on high power gyrotron windows has focused interest on some homopolar insulators as alternatives to sapphire due to their combined low dielectric loss and high thermal conductivity. The two main candidates at this moment, CVD diamond and high resistivity silicon, have been studied. As an indicator of their radiation behaviour, loss tangent and permittivity at about 15 GHz have been measured under 1.8 MeV electron irradiation at RT. In the case of silicon the previously observed radiation-induced decrease of loss tangent has been confirmed reaching a lower saturation level of 3.5 x 10 -5 at higher doses, and falling with increasing frequency. An even more important observation is that the sensitivity to ionizing radiation dropped by 4 orders of magnitude due to the radiation dose. First results for diamond are also promising, only a small degradation at relatively short times being seen with no further changes up to the maximum dose used. (orig.)

  1. Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

    Science.gov (United States)

    Walker, G. H.; Conway, E. J.

    1978-01-01

    Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

  2. Positron annihilation lifetime measurement of electron-irradiated ZnO crystals

    International Nuclear Information System (INIS)

    Tomiyama, N.; Takenaka, M.; Kuramoto, E.

    1992-01-01

    In order to clarify the basic properties of radiation-induced defects in ZnO crystals positron annihilation lifetime measurements were performed for the ZnO crystals irradiated by 28 MeV electrons at 77 K. The electron-irradiation induced the color change of the specimens from the original yellowish-white to the orange and long lifetime component of about 200 psec. The isochronal annealing experiments showed that the decrease of the positron annihilation lifetime appeared in the temperature range between 423 and 473 K and between 723 and 923 K. The radiation-induced color change disappeared in the first temperature range. It can be considered that the first stage corresponds to migration and recovery of radiation-induced oxygen vacancies. It is difficult to identify the second stage, but it might be the recovery stage of small ZnO interstitial clusters formed through clustering of Zn and O interstitials

  3. Vacancy defects in electron irradiated RPV steels studied by positron lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Moser, P; Li, X H [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, J C [Electricite de France (EDF), 77 - Ecuelles (France)

    1994-12-31

    Specimens of French RPV (reactor pressure vessels) steels at different rates of segregation have been irradiated at 150 and 288 deg C with 3 MeV electrons (irradiation dose: 4*10{sup 19} e-/cm{sup 2}). Vacancy defects are studied by positron lifetime measurements before and after irradiation and at each step of isochronal annealing. After 150 deg C irradiation, a recovery step is observed in both specimens, for annealing treatments in the range 220-370 deg C and is attributed to the dissociation of vacancy-impurity complexes. The size of vacancy clusters never overcome 10 empty atomic volumes. If ``fresh`` dislocations are created just before irradiation, big vacancy clusters could be formed. After 288 deg C irradiation, small vacancy cluster of 4-10 empty atomic volumes are observed. (authors). 3 figs., 7 refs.

  4. Electron microscopy of boron carbide before and after electron irradiation

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.; Beauvy, M.; Athanassiadis, T.

    1984-06-01

    The microstructure of boron carbide has been studied by electron microscopy and related to the composition of the material. After electron irradiations in an usual transmission electron microscope and in a high voltage electron microscope at different temperatures and fluxes no change of these microstructures have been observed but a sputtering of the surface of the samples, which has been studied quantitatively [fr

  5. The electron irradiation effects in different structures of diodes

    International Nuclear Information System (INIS)

    Li Quanfen; Wang Jiaxu

    1993-01-01

    This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions

  6. The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

    Science.gov (United States)

    Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

    We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

  7. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  8. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  9. Bulk and interface defects in electron irradiated InP

    International Nuclear Information System (INIS)

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  10. (100) faceted anion voids in electron irradiated fluorite

    International Nuclear Information System (INIS)

    Johnson, E.

    1979-01-01

    High fluence electron irradiation of fluorite crystals in the temperature range 150 to 320 K results in formation of a simple cubic anion void superlattice. Above 320 K the damage structure changes to a random distribution of large [001] faceted anion voids. This voidage behaviour, similar to that observed in a range of irradiated metals, is discussed in terms points defect rather than conventional colour centre terminology. (Auth.)

  11. Evolution of graphene nanoribbons under low-voltage electron irradiation

    KAUST Repository

    Zhu, Wenpeng

    2012-01-01

    Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ∼105 on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties. © 2012 The Royal Society of Chemistry.

  12. Elemental process of amorphization induced by electron irradiation in Si

    International Nuclear Information System (INIS)

    Yamasaki, Jun; Takeda, Seiji; Tsuda, Kenji

    2002-01-01

    We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure I4 in c-Si and it becomes an amorphous embryo

  13. Effects of electron irradiation on LDPE/MWCNT composites

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jianqun [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, Chaoming; Rui, Erming [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics, Harbin Institute of Technology, Harbin 150001 (China)

    2015-12-15

    In this study, mutiwalled carbon nanotubes (MWCNTs) were incorporated into low density polyethylene (LDPE) in different concentrations (2%, 4% and 8%) using a melt blending process. Structural, thermal stability and tensile property of the unirradiated/irradiated LDPE/MWCNT composites by 110 keV electrons were investigated by means of scanning electron microscopy (SEM), small angle X-ray scattering (SAXS), Raman spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, thermogravimetric analysis (TGA) and uniaxial tensile techniques. Experimental results show that the addition of MWCNTs obviously increases the ultimate tensile strength of LDPE and decreases the elongation at break, which is attributed to the homogeneous distribution of the MWCNTs in LDPE and intense interaction between MWCNTs and LDPE matrix. Also, the electron irradiation further increases the ultimate tensile strength of LDPE/MWCNT composites, which can be ascribed to the more intense interaction between MWCNTs and LDPE matrix, and the formation of crosslinking sites in LDPE matrix induced by the electron irradiation. The addition of MWCNTs significantly enhances thermal stability of the LDPE due to the hindering effect and the scavenging free radicals, while the electron irradiation decreases thermal stability of the LDPE/MWCNT composites since the structure of the MWCNTs and LDPE matrix damages.

  14. Electron irradiation effect on single crystal of niobium

    International Nuclear Information System (INIS)

    Otero, M.P.; Lucki, G.

    1984-01-01

    The effect of electron irradiation (900 KeV) on gliding dislocations of single crystal Nb with its tensile axe in the [941] orientation was observed for the in-situ deformation in a high voltage electron microscope (HVEM) at Argonne National Laboratory. The experimental was carried out by the 1 hour-electron irradiation with no stress applied. Straight dislocations actuating as sinks for the electron produced defects became helicoidal as the irradiation proceeded. Frenkel pairs were created in Nb for electron energies > = 650 KeV and, as the single vacancies do not undergo long-range migration in Nb at temperatures much below 620 K, the defects that are entrapped by the dislocations are self-interstitials produced by electron displacement. Applying the stress it was possible to observe that modified dislocations did not glide while the dislocations not affected by the irradiation are visibly in movement. This important result explains the neutron and electron-irradiation induced work-hardening effect for Nb that was previously observed. (Author) [pt

  15. Practical aspects of the pasteurization of sewage sludge by electron irradiation

    International Nuclear Information System (INIS)

    Tauber, M.; Hofmann, E.G.; Offermann, B.P.

    1975-01-01

    Recently the demand for disinfection of sewage sludge has increased. Investigations have shown that the radiation pasteurization of sludge is the most preferable treatment. Up to now most of these investigations have been made with 60 Co radiation sources. However, it is not easy to run an economic and safe process line for the irradiation of sewage sludge with such isotope sources. Powerful electron accelerators are now available and the main features of the irradiation of sewage sludge with fast electrons are discussed and the design parameters of such installations described. From the standpoint of the limited electron penetration into the material it is desirable to use high-energy electrons (up to 1.5 MeV) whereas from an economic standpoint it may be better to use electrons of lower energies (0.5 to 1 MeV) and to homogenize the sewage sludge to the required thickness. The following parameters must be considered for a commercial process line: effectivity of the electron radiation process; limited penetration of electrons into the material to be irradiated; beam power of electron accelerators required for sewage sludge treatment; safety aspects; economics of the process with regard to electron energy, power and homogenization of the material; and environmental aspects of the installations. The practical aspects of commercial process lines for electron irradiation of sewage sludge and the design of handling equipment are discussed in relation to these parameters. (author)

  16. Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2); [beta]-ray counting

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1994-02-01

    In order to check radioactivity of beta-emmitters produced by ([gamma], n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2[pi] gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the [beta]-activities were detected. From the amount of observed radioactivities of [beta]-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from [sup 40]K contained in the samples and, hence, its biological effects should be negligible. (author).

  17. Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

    International Nuclear Information System (INIS)

    Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

    2010-01-01

    Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

  18. Impact of silver metallization and electron irradiation on the mechanical deformation of polyimide films

    Science.gov (United States)

    Muradov, A. D.; Mukashev, K. M.; Yar-Mukhamedova, G. Sh.; Korobova, N. E.

    2017-11-01

    The impact of silver metallization and electron irradiation on the physical and mechanical properties of polyimide films has been studied. The metal that impregnated the structure of the polyimide substrate was 1-5 μm. The surface coatings contained 80-97% of the relative silver mirror in the visible and infrared regions. Irradiation was performed at the ELU-6 linear accelerator with an average beam electron energy of 2 MeV, an integral current of up to 1000 μA, a pulse repetition rate of 200 Hz, and a pulse duration of 5 μs. The absorbed dose in the samples was 10, 20, 30, and 40 MGy. The samples were deformed at room temperature under uniaxial tension on an Instron 5982 universal testing system. The structural changes in the composite materials that result from the impact of the physical factors were studied using an X-ray diffractometer DRON-2M in air at 293 K using Cu K α radiation (λαCu = 1.5418 Å). A substantial growth of mechanical characteristics resulting from the film metallization, as compared to the pure film, was observed. The growth of the ultimate strength by Δσ = 105 MPa and the plasticity by Δɛ = 75% is connected with the characteristics of the change of structure of the metallized films and the chemical etching conditions. The electron irradiation of the metallized polyimide film worsens its elastic and strength characteristics due to the formation of new phases in the form of silver oxide in the coating. The concentration of these phases increased with increasing dose, which was also the result of the violation of the ordered material structure, namely, the rupture of polyimide macromolecule bonds and the formation of new phases of silver in the coating. A mathematical model was obtained that predicts the elastic properties of silver metallized polyimide films. This model agrees with the experimental data.

  19. A study of the profile of the E3 electron trap in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kourkoutas, C.D. (TEI Athens (Greece). Dept. of Physics Chemistry and Material Technology); Kovacs, B.; Szentpali, B.; Somogyi, K. (Research Inst. for Technical Physics, Budapest (Hungary)); Euthymiou, P.C. (Athens Univ. (Greece)); Giakoumakis, G.E. (Ioannina Univ. (Greece). Dept. of Physics)

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 [mu]m, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author).

  20. A study of the profile of the E3 electron trap in GaAs

    International Nuclear Information System (INIS)

    Kourkoutas, C.D.; Euthymiou, P.C.; Giakoumakis, G.E.

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 μm, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author)

  1. Electron-irradiation induced changes in the phases and photocatalytic activity of TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sapnar, K.B.; Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N., E-mail: vnb@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2012-04-01

    Highlights: Black-Right-Pointing-Pointer The phases of TiO{sub 2} nanoparticles have been changed by electron irradiation. Black-Right-Pointing-Pointer The photocatalytic activity of TiO{sub 2} gets enhanced after electron irradiation. Black-Right-Pointing-Pointer The brookite phase has appeared in TiO{sub 2} after electron irradiation. - Abstract: Samples of TiO{sub 2} nanoparticles, with mixed anatase and rutile phases, were irradiated with 6.5 MeV electrons at fluences, 1.5, 2.0, 2.5, 3.0, and 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2} and characterized by several methods. With increasing electron fluence, a continuous decrease in the average particle size from {approx}80 nm to around 30 nm were observed along with a decrease in the rutile and the anatase phases of TiO{sub 2}, but at different rates, and growth of the TiO{sub 2} brookite phase at slow rate. The photocatalytic activities of different electron irradiated TiO{sub 2} samples, in the photodegradation of methylene blue, were studied by recording UV-Vis absorption spectra of the respective solutions. On electron irradiation, even though the rutile phase in the TiO{sub 2} was decreasing, the photocatalytic activity of the nanoparticles increased continuously with fluence up to {approx}3.0 Multiplication-Sign 10{sup 15} e cm{sup -2}, but decreased at 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2}. The energy levels introduced by the brookite phase and the electron induced defects in TiO{sub 2} could have effectively reduced the electron-hole recombination rate in the absence of the rutile phase. The observed enhancement in the photocatalytic activity of the irradiated TiO{sub 2} is attributed to the formation of small size particles, the introduction of the oxygen related vacancies and other defects, the growth of the brookite phase, and increased absorption of radiation over the ultraviolet and visible range.

  2. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV 28Si beam ...

  3. Thermoluminescence in KBr:D electron irradiated at room temperature

    International Nuclear Information System (INIS)

    Paredes Campoy, J.C.; Lopez Carranza, E.

    1991-07-01

    The thermoluminescence of KBr:D samples electron irradiated at room temperature after thermal annealing at 673 K for 1 hour have been studied in the temperature range 360-730 K. The experimental TL-curve was discomposed by computer analysis in seven overlapping TL peaks, giving for them the order of the kinetics of thermal stimulation, the activation energy, the frequency factor, the relative values of the electronic concentration in traps at the initial heating temperature and the temperature at the maximum of the peak. (author). 18 refs, 1 fig., 3 tabs

  4. Low-temperature electron irradiation induced defects in gallium arsenide: bulk and surface acoustic wave studies

    International Nuclear Information System (INIS)

    Brophy, M.J. Jr.

    1985-01-01

    Irradiation of GaAs with 2.25 to 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The annealing of both peaks was studied with isochronal and isothermal anneals in the temperature range 200 to 335 K. Peak I anneals with a spectrum of activation energies in the range 0.7-1.1 eV between 220 and 335 K. Peak II anneals with a single activation energy of about 1.1 eV above 300K. The different annealing characteristics indicate that these peaks represent two distinct defects. The annealing above 300 K has not been seen in electrical resistivity measurements, but was observed in earlier length change experiments. Irradiation of GaAs:Cr produces no Cr-radiation defect complexes. The attenuation peak associated with Cr 2+ decrease with electron dose, but starts to recover at 150 K

  5. Strengthening of Poly Methyl Methacrylate (PMMA) through Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Sung Ho; Lim, Hyung San; Ha, Jun Mok; Cho, Sung Oh [KAIST, Daejeon (Korea, Republic of)

    2015-05-15

    Poly Methyl Methacrylate (PMMA) was previously known to show the deteriorating mechanical properties when irradiated with electrons. This is true for low electron irradiation does, but it was found, through experimentation, that at high irradiation dose, PMMA demonstrates improved mechanical properties. With enough electron irradiation dose, the scissions can form new links amongst one another to achieve stability that surpasses that of the PMMA in pre-irradiation treatment state. With higher irradiation dosage and beam strength, hardness of irradiated PMMA could be increased to a much greater extent. Electrons with 50keV of energy can only penetrate around 30 μm of PMMA, thus increasing the beam energy could potentially allow for hardening of not just the surface of the PMMA samples, but the whole samples themselves. Furthermore, Pencil Hardness Test is a method to roughly analyze a material's hardness and does not provide an accurate feedback on the mechanical properties of the material of interest. Hence, a more thorough and effective method of measuring data from the use of equipment such as IZOD Impact Tester, Strain-Stress Tester and Haze Meter will be utilized in the future.

  6. Quantitative analysis of complexes in electron irradiated CZ silicon

    International Nuclear Information System (INIS)

    Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

    2007-01-01

    Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

  7. Nanoporous gold synthesized by plasma-assisted inert gas condensation: room temperature sintering, nanoscale mechanical properties and stability against high energy electron irradiation

    Science.gov (United States)

    Weyrauch, S.; Wagner, C.; Suckfuell, C.; Lotnyk, A.; Knolle, W.; Gerlach, J. W.; Mayr, S. G.

    2018-02-01

    With a plasma assisted gas condensation system it is possible to achieve high-purity nanoporous Au (np-Au) structures with minimal contaminations and impurities. The structures consist of single Au-nanoparticles, which partially sintered together due to their high surface to volume ratio. Through electron microscopy investigations a porosity  >50% with ligament sizes between 20-30 nm was revealed. The elastic modulus of the np-Au was determined via peak force quantitative nanomechanical mapping and resulted in values of 7.5  ±  1.5 GPa. The presented structures partially sintered at room temperature, but proved to be stable to electron irradiation with energies of 7 MeV up to doses of 100 MGy. The electron irradiation stability opens the venue for electron assisted functionalization with biomolecules.

  8. Radiation damage studies on natural and synthetic rock salt utilizing measurements made during electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Levy, P.W.

    1977-01-01

    The numerous radiation damage effects which will occur in the rock salt surrounding radioactive waste disposal canisters are being investigated with unique apparatus for making optical and other measurements during 1 to 3 MeV electron irradiation. This equipment, consists of a computer controlled double beam spectrophotometer which simultaneously records 256 point absorption and radioluminescence spectra, in either the 200 to 400 or 400 to 800 nm region, every 40 seconds. Most often the measurements commence as the irradiation is started and continue after it is terminated. This procedure provides information on the kinetics and other details of the damage formation process and, when the irradiation is terminated, on both the transient and stable damage components. The exposure rates may be varied between 10 2 or 10 3 to more than 10 8 rad per hour and the sample temperature maintained between 25 and 800 or 900 0 C. Although this project was started recently, measurements have been made on synthetic NaCl and on natural rock salt from two disposal sites and two mines. Both unstrained and purposely strained samples have been used. Most recently, measurements at temperatures between 25 and 200 0 C have been started. The few measurements completed to date indicate that the damage formation kinetics in natural rock salt are quite different from those observed in synthetic NaCl

  9. EPR and transient capacitance studies on electron-irradiated silicon solar cells

    Science.gov (United States)

    Lee, Y. H.; Cheng, L. J.; Mooney, P. M.; Corbett, J. W.

    1977-01-01

    One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

  10. Introduction and recovery of point defects in electron-irradiated ZnO

    International Nuclear Information System (INIS)

    Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

    2005-01-01

    We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (E el =2 MeV, fluence 6x10 17 cm -2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [V Zn ]≅c ion ≅2x10 16 cm -3 . The O vacancies are introduced at a 10-times-larger concentration [V O ]≅3x10 17 cm -3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m =1.8±0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies

  11. Interpretation of recovery stage III in gold. [Electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Seeger, A.; Frank, W. (Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany, F.R.). Inst. fuer Physik; Stuttgart Univ. (Germany, F.R.). Inst. fuer Theoretische und Angewandte Physik)

    1983-05-01

    The paper compares a recent investigation of Stage-III recovery on electron-irradiated gold by Sonnenberg and Dedek with earlier work on cold-worked or quenched gold. The experimental results of Sonnenberg and Dedek are found to be in excellent agreement with those of Schuele, Seeger, Schumacher, and King, who showed that in Au Stage III is due to the migration of an elementary intrinsic point defect with migration enthalpy Hsup(III) = (0.71 +- 0.02)eV. Since the monovacancy migration enthalpy Hsub(IVsup(M)) = (0.83 +- 0.02)eV obtained by Schuele et al. has been confirmed by other workers and independent techniques, it is concluded that Hsup(III) represents the migration enthalpy of isolated self-interstitials.

  12. Application of electron irradiation to food containers and packaging materials

    International Nuclear Information System (INIS)

    Ueno, Koji

    2010-01-01

    Problems caused by microbial contamination and hazardous chemicals have attracted much attention in the food industry. The number of systems such as hygienic management systems and Hazard Analysis Critical Control Point (HACCP) systems adopted in the manufacturing process is increasing. As manufacturing process control has become stricter, stricter control is also required for microbial control for containers and packaging materials (from disinfection to sterilization). Since safe and reliable methods for sterilizing food containers and packaging materials that leave no residue are required, electron beam sterilization used for medical equipment has attracted attention from the food industry. This paper describes an electron irradiation facility, methods for applying electron beams to food containers and packaging materials, and products irradiated with electron beams. (author)

  13. Electron irradiation induced nanocrystal formation in Cu-borosilicate glass

    Energy Technology Data Exchange (ETDEWEB)

    Sabri, Mohammed Mohammed; Möbus, Günter, E-mail: g.moebus@sheffield.ac.uk [University of Sheffield, Department of Materials Science and Engineering (United Kingdom)

    2016-03-15

    Nanoscale writing of Cu nanoparticles in glasses is introduced using focused electron irradiation by transmission electron microscopy. Two types of copper borosilicate glasses, one with high and another with low Cu loading, have been tested at energies of 200–300 keV, and formation of Cu nanoparticles in a variety of shapes and sizes using different irradiation conditions is achieved. Electron energy loss spectroscopy analysis, combined with high-resolution transmission electron microscopy imaging, confirmed the irradiation-induced precipitated nanoparticles as metallic, while furnace annealing of the glass triggered dendrite-shaped particles of copper oxide. Unusual patterns of nanoparticle rings and chains under focused electron beam irradiation are also presented. Conclusively, electron beam patterning of Cu-loaded glasses is a promising alternative route to well-established femtosecond laser photoreduction of Cu ions in glass.

  14. Precipitate resolution in an electron irradiated ni-si alloy

    Science.gov (United States)

    Watanabe, H.; Muroga, T.; Yoshida, N.; Kitajima, K.

    1988-09-01

    Precipitate resolution processes in a Ni-12.6 at% Si alloy under electron irradiation have been observed by means of HVEM. Above 400°C, growth and resolution of Ni 3Si precipitates were observed simultaneously. The detail stereoscopic observation showed that the precipitates close to free surfaces grew, while those in the middle of a specimen dissolved. The critical dose when the precipitates start to shrink increases with increasing the depth. This depth dependence of the precipitate behavior under irradiation has a close relation with the formation of surface precipitates and the growth of solute depleted zone beneath them. The temperature and dose dependence of the resolution rate showed that the precipitates in the solute depleted zone dissolved by the interface controlled process of radiation-enhanced diffusion.

  15. Challenges in validating radiation sterilization with low energy electron irradiation

    International Nuclear Information System (INIS)

    Miller, A.; Helt-Hansen, J.

    2011-01-01

    Complete text of publication follows. Low energy electron irradiation (80-300 keV) is used increasingly for sterilization or decontamination in connection with isolators for aseptic filling lines in the pharmaceutical industry. It is not defined how validation for this process shall be carried out. A method can be derived from the medical device standard for radiation sterilization, ISO 11137, because the principles described in this standard can be applied to almost any industrial irradiation process. The validations elements are: Process definition, concerning specification of the dose required for the process and the maximum acceptable dose for the product. Installation qualification, concerning acceptance the irradiation facility. Operational qualification, concerning characterization of the facility. Performance qualification, concerning setting up the process. Process control, concerning routine monitoring. The limited penetration of the low energy electrons leads to problems with respect to executing these validation steps. This paper discusses these problems, and shows with examples how they can be solved.

  16. Neutron-damaged GaAs detectors for use in a Compton spectrometer

    International Nuclear Information System (INIS)

    Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

    1992-01-01

    Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

  17. Tailoring crystallinity and configuration of silica nanotubes by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, Tomitsugu, E-mail: taguchi.tomitsugu@jaea.go.jp; Yamaguchi, Kenji

    2015-05-01

    Highlights: •Single-crystal SiO{sub 2} nanotubes were successfully synthesized for the first time. •The single-crystal SiO{sub 2} was α-crystobalite. •Desired area of single-crystal nanotube can be changed to amorphous by electron irradiation. •The configuration of nanotube can be controlled using the focused electron irradiation technique. -- Abstract: SiO{sub 2} nanotubes show potential in applications such as nanoscale electronic and optical devices, bioseparation, biocatalysis, and nanomedicine. As-grown SiO{sub 2} nanotubes in the previous studies always have an amorphous wall, and here we demonstrate the successful synthesis of single-crystal nanotubes for the first time by the heat treatment of SiC nanotubes at 1300 °C for 10 h under low-vacuum conditions. According to TEM observations, the single-crystal SiO{sub 2} was α-cristobalite. We also demonstrate that single-crystal SiO{sub 2} nanotubes can be transformed into amorphous SiO{sub 2} nanotubes by electron beam irradiation. Moreover, we synthesized a crystalline/amorphous SiO{sub 2} composite nanotube, in which crystalline and amorphous SiO{sub 2} coexisted in different localized regions. In addition, for biomedical applications such as drug delivery systems, controlling the configuration of the open end, the diameter, and capsulation of SiO{sub 2} nanotubes is crucial. We can also obturate, capsulate, and cut a SiO{sub 2} nanotube, as well as modify the inner diameter of the nanotube at a specific, nanometer-sized region using the focused electron beam irradiation technique.

  18. The GaAs electron source: simulations and experiments

    International Nuclear Information System (INIS)

    Aleksandrov, A.V.; Ciullo, G.; Guidi, V.; Kudelainen, V.I.; Lamanna, G.; Lenisa, P.; Logachov, P.V.; Maciga, B.; Novokhatsky, A.; Tecchio, L.; Yang, B.

    1994-01-01

    In this paper we calculate electron emission from GaAs photocathodes using the Monte Carlo technique. Typical data of energy spread of the electron beam are presented. For photoenergy ranging from 1.6 to 2.1 eV, the calculated longitudinal and transverse energy spreads are 14.4-78 and 4-14.7 meV respectively. Temporal measurement of GaAs photocathodes has been performed. The preliminary results show that the temporal response is faster than 200 ps. (orig.)

  19. Determination of displacement threshold energies in pure Ti and in γ-TiAl alloys by electron irradiation

    International Nuclear Information System (INIS)

    Sattonnay, G.; Dimitrov, O.

    1999-01-01

    Resistivity damage rates, determined during low-temperature electron irradiations in the energy range 0.3-2.5 MeV, were used for evaluating displacement threshold energies of titanium in high purity hcp titanium, and of titanium and aluminium in γ-TiAl intermetallic compounds. These parameters were deduced from a comparison of experimental displacement cross-section variations as a function of electron energy, with theoretical curves based on a displacement model for diatomic materials. The displacement energy of titanium in hcp titanium appears to depend on the electron energy. A threshold value of 21±1 eV was obtained in the range 0.3-0.5 MeV, and a larger value of 30±2 eV is determined in the range 0.5-2.5 MeV. In γ-TiAl, aluminium atoms are displaced first, with a threshold displacement energy (34±2 eV) larger than the one of titanium atoms, and much higher than the value in pure aluminium. The displacement energy of Ti atoms is 28±2 eV, close to the one obtained in pure titanium under similar conditions. These results were used for re-evaluating the Frenkel-pair resistivity of the stoichiometric TiAl compound. (orig.)

  20. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  1. Dose controlled low energy electron irradiator for biomolecular films.

    Science.gov (United States)

    Kumar, S V K; Tare, Satej T; Upalekar, Yogesh V; Tsering, Thupten

    2016-03-01

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at -20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  2. Design of electron detection system for pulse electron irradiator

    International Nuclear Information System (INIS)

    Anjar Anggraini H; Agus Purwadi; Lely Susita RM; Bambang Siswanto; Agus Wijayanto

    2016-01-01

    Design of electron detection system for pulse electron irradiator has been conducted on the Plasma Cathode Electron Source by Rogowski coil technique. Rogowski coil has ability to capture the induced magnetic field of the electric current, subsequent induced magnetic field will provide voltage after passing integrator. This diagnostic used combination of copper wire, ferrite and RC integrator. The design depends on the pulse width and the value of plasma current that passes through the coil, thus the number of windings, coil area and integrator can be designed. For plasma spots current of IDPS expected to be 10 A and pulse width 10 μs the Rogowski coil using MnZn ferrite with inductance L = 0.275 mH and permeability μr = 200 H/m. For the current of plasma arc ADPS expected to be 100 A and pulse width 100 μs by using inductance L=1.9634 mH and permeability μr = 6256 H/m. Electron current in extraction system expected to be 30 A and pulse width 100 μs the Rogowski coil using inductance L=51.749 mH and permeability μr= 4987 H/m. Design integrator used is the type of RC integrator. (author)

  3. Ignitor electrode system design for the pulses electron irradiators device

    International Nuclear Information System (INIS)

    Lely Susita RM; Ihwanul Aziz

    2016-01-01

    The designed ignitor electrode system is a system used to initiate the plasma discharge. It consists of two pieces which are placed on both side of the plasma vessel. Each of the ignitor electrode system consists of a cathode, an anode and insulator between the cathode and the anode. The best cathode material for ignitor electrode system is Mg due to its lowest ion erosion rate (γi =11.7 μg/C) and its low cohesive energy (1.51 eV). The specifications of ignitor electrode system designed for the pulse electron irradiators is as follow: Mg cathode materials in the form of rod having a diameter of 6.35 mm and length of 76.75 mm. Anode material are made of non magnetic of SS 304 cylinder shaped with an outer diameter of 88.53 mm, an inner diameter of 81.53 mm and a thickness of 3.50 mm. Insulating material between the cathode and the anode is made of teflon cylinder shaped, outer diameter of 9.50 mm, an inner diameter of 6.35 mm and a length of 30 mm. Based on the ignitor electrode system design, the next step is construction and function test of the ignitor electrode system. (author)

  4. Dose controlled low energy electron irradiator for biomolecular films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. V. K., E-mail: svkk@tifr.res.in; Tare, Satej T.; Upalekar, Yogesh V.; Tsering, Thupten [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

    2016-03-15

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at −20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  5. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  6. Radiosensitivity of chlorella after medium energy accelerated electron irradiation

    International Nuclear Information System (INIS)

    Roux, J.C.

    1966-06-01

    The survival curves (capability of multiplication) of chlorella pyrenoidosa after irradiations can be used for soft electrons (0.65 and 1 MeV), hence penetrating into only 2 to 4 millimeters of water: the algae are laying on porous membranes and the doses are calculated from the power of the electron beam measured by the electric current on a metallic target or by Fricke's dosimetry. With these techniques, it is showed and discussed the part of anoxia in the radioprotection (magnitude or reduction of the dose calculated from the slope of survival curves: 2.5 ) that is more important than the restoration studied by the fractionation of the dose. The 0.65 and 1 MeV electrons have a biologic effect lesser than 180 keV X-rays (RBE - relative biological efficiency - calculated on the slope of survival curves is 0.92 in aerated irradiation, 0.56 in the deoxygenated irradiation). (author) [fr

  7. Fast GaAs photoconductor responses to subnanosecond proton pulses

    International Nuclear Information System (INIS)

    Pochet, T.

    1993-01-01

    GaAs photoconductors have been tailored to detect ultrafast proton pulses having energies ranging between 4 and 9 MeV. The sensitivity, the linearity and the speed of response of the devices are analyzed as a function of their neutron pre-irradiation treatment. The dependence of the sensitivity on the proton energy and the applied polarization is also studied. Finally, the experimental results are compared with a simple theoretical model

  8. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  9. Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

    2015-09-15

    Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

  10. Electron irradiation effect on bubble formation and growth in a sodium borosilicate glass

    International Nuclear Information System (INIS)

    Chen, X.; Birtcher, R. C.; Donnelly, S. E.

    2000-01-01

    In this study, the authors studied simultaneous and intermittent electron irradiation effects on bubble growth in a simple sodium borosilicate glass during Xe ion implantation at 200 C. Simultaneous electron irradiation increases the average bubble size in the glass. This enhanced diffusion is also shown by the migration of Xe from bubbles into the matrix when the sample is irradiated by an electron beam after the Xe implantation

  11. Spectroscopy of GaAs quantum wells

    International Nuclear Information System (INIS)

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs

  12. Spectroscopy of GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  13. Defects in low temperature electron irradiated InP

    International Nuclear Information System (INIS)

    Suski, J.; Bourgoin, J.

    1984-01-01

    n and p-InP has been irradiated at 25K with 1MeV electrons and the created defects were studied by deep level transient spectroscopy (DLTS) in the range 25K-400K. In n-InP, four traps are directly observed, with low introduction rates except for one. They anneal in three stages, and four new centers of still lower concentration appear after 70 0 C heat treatment. In p-InP, two dominant traps stable up to approx.= 400K with introduction rates close to the theoretical ones, which might be primary defects are found, while another one is clearly a secondary defect likely associated to Zn dopant. At least two of the low concentration irradiation induced electron traps, created between 25K and 100K are also secondary defects, which implies a mobility of some primary defects down to 100K at least. (author)

  14. Plastic deformation of aluminium under continuous electron irradiation

    International Nuclear Information System (INIS)

    Dubinko, V.I.; Dovbnya, A.N.; Kushnir, V.A.; Khodak, I.V.; Mitrochenko, V.V.; Lebedev, V.P.; Krylovskij, V.S.; Lebedev, S.V.; Klepikov, V.F.

    2010-01-01

    Plastic deformation of polycrystalline aluminum (99.5%) was investigated in the absence and presence of a high-energy electron beam (E = 0.5 MeV, φ = (0.5...5)·10 13 cm -2 ·c -1 ). Reduction of the yield stress and hardening coefficient was determined as a function of deformation, the sample thickness and the beam density. The increase of plasticity of the metal due to the impact of the electron beam has been established. The temperature in the deformation process was measured, which allowed separating the contribution of radiation-induced effects on the mechanical characteristics of aluminum. Possible mechanisms of the phenomenon are discussed.

  15. A structure development in electron-irradiated type Ia diamond

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ositinskaya, T.D.; Tkach, V.N.

    1998-01-01

    A type Ia diamond crystal with nitrogen impurity in different forms was irradiated by 3.5 MeV electrons with increasing doses 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , 2 centre dot 10 18 e/cm 2 and investigated before and after each dose by positron annihilation, EPR, and optical spectroscopy. After irradiation with the highest dose, the effect of development of a visible defective structure of the crystal is revealed. A description of this effect and data of EPR and IR-measurements depending on irradiation doses are presented. First results of cathodoluminescence (CL) studies in the form CL-topograms and CL-spectra for difference zones of the crystal are also given

  16. Investigation of carrier removal in electron irradiated silicon diodes

    International Nuclear Information System (INIS)

    Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

    1997-01-01

    We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

  17. Energetic Ion and Electron Irradiation of the Icy Galilean Satellites

    Science.gov (United States)

    Cooper, John F.; Johnson, Robert E.; Mauk, Barry H.; Garrett, Henry B.; Gehrels, Neil

    2001-01-01

    Galileo Orbiter measurements of energetic ions (20 keV to 100 MeV) and electrons (20-700 keV) in Jupiter's magnetosphere are used, in conjunction with the JPL electron model (less than 40 MeV), to compute irradiation effects in the surface layers of Europa, Ganymede, and Callisto. Significant elemental modifications are produced on unshielded surfaces to approximately centimeter depths in times of less than or equal to 10(exp 6) years, whereas micrometer depths on Europa are fully processed in approximately 10 years. Most observations of surface composition are limited to optical depths of approximately 1 mm, which are indirect contact with the space environment. Incident flux modeling includes Stormer deflection by the Ganymede dipole magnetic field, likely variable over that satellite's irradiation history. Delivered energy flux of approximately 8 x 10(exp 10) keV/square cm-s at Europa is comparable to total internal heat flux in the same units from tidal and radiogenic sources, while exceeding that for solar UV energies (greater than 6 eV) relevant to ice chemistry. Particle energy fluxes to Ganymede's equator and Callisto are similar at approximately 2-3 x 10(exp 8) keV/square cm-s with 5 x 10(exp 9) at Ganymede's polar cap, the latter being comparable to radiogenic energy input. Rates of change in optical reflectance and molecular composition on Europa, and on Ganymede's polar cap, are strongly driven by energy from irradiation, even in relatively young regions. Irradiation of nonice materials can produce SO2 and CO2, detected on Callisto and Europa, and simple to complex hydrocarbons. Iogenic neutral atoms and meteoroids deliver negligible energy approximately 10(exp 4-5) keV/square cm-s but impacts of the latter are important for burial or removal of irradiation products. Downward transport of radiation produced oxidants and hydrocarbons could deliver significant chemical energy into the satellite interiors for astrobiological evolution in putative sub

  18. On the influence of high energy (250MeV) electron irradiation on the structure and properties of aluminium

    International Nuclear Information System (INIS)

    Gindin, I.A.; Neklyudov, I.M.; Okovit, V.S.; Starolat, M.P.; Dyatlov, V.P.

    1974-01-01

    The results of studies on the amplitude dependence of internal friction and structural changes in technically pure aluminium in the initial state and after irradiation with high-energy electrons are presented. Three stages are observed in the internal friction curves from the amplitude of the waves. If the values of the internal friction remain the same, irradiation considerably widens the amplitude-independent region and shifts the second and third regions toward the high-amplitude direction at first. Starting with the Granate-Luke model, changes in the length of the free dislocation segments in irradiated aluminium were determined. Electron microscope studies showed the presence of numerous radiation defects and changes in the configuration with dislocation lines in irradiated aluminum

  19. Electron irradiation experiments in support of fusion materials development

    International Nuclear Information System (INIS)

    Gelles, D.S.; Ohnuki, S.; Takahashi, H.; Matsui, H.; Kohno, Y.

    1991-11-01

    Microstructural evolution in response to 1 MeV irradiation has been investigated for three simple ferritic alloys, pure beryllium, pure vanadium, and two simple vanadium alloys over a range of temperatures and doses. Microstructural evolution in Fe-3, -9, and -18Cr ferritic alloys is found to consist of crenulated, faulted a loops and circular, unfaulted a/2 loops at low temperatures, but with only unfaulted loops at high temperatures. The complex dislocation evolution is attributed to sigma phase precipifaults arising from chromium segregation to point defect sinks. Beryllium is found to be resistant to electron damage; the only effect observed was enhanced dislocation mobility. Pure vanadium, V-5Fe, and V-1Ni microstructural response was complicated by precipitation on heating to 400 degrees C and above, but dislocation evolution was investigated in the range of room temperature to 300 degrees C and at 600 degrees C. The three materials behaved similarly, except that pure vanadium showed more rapid dislocation evolution. This difference does not explain the enhanced swelling observed in vanadium alloys

  20. Optical properties of electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Grigoryan, N.E.; Eritsyan, G.N.

    1980-01-01

    Results of optical absorption and photoconductivity measurements in the 0.1 to 2.4 eV range of GaP crystals irradiated with 7.5 and 50 MeV electrons are presented. The absorption of irradiated crystals near the edge can be represented by two exponential regions. In the free carrier absorption region one can observe as a result of irradiation a decrease of the power index p in the dependence α proportional to lambdap. Photoconductivity with long-time relaxation takes place in the spectral interval where the additional absorption is observed. The quenching of residual conductivity can be observed at hν=1.0eV. Variations in absorption and photoconductivity are attributed to the 'tails' of density states near the zone edges arising at introduction of both point defects and disordered regions. At hν=2.1eV one can observe a resonance band which is attributed to intra-centre transitions on point defects. A recovery of the optical properties of GaP at annealing is studied. In heavily irradiated GaP crystals point defects can form gatherings which display themselves as disordered regions. (author)

  1. Annealing of proton-damaged GaAs and 1/f noise

    NARCIS (Netherlands)

    Chen, X.Y.; Folter, de L.C.

    1997-01-01

    GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton

  2. An AES Study of the Room Temperature Surface Conditioning of Technological Metal Surfaces by Electron Irradiation

    CERN Document Server

    Scheuerlein, C; Taborelli, M; Brown, A; Baker, M A

    2002-01-01

    The modifications to technological copper and niobium surfaces induced by 2.5 keV electron irradiation have been investigated in the context of the conditioning process occurring in particle accelerator ultra high vacuum systems. Changes in the elemental surface composition have been found using Scanning Auger Microscopy (SAM) by monitoring the carbon, oxygen and metal Auger peak intensities as a function of electron irradiation in the dose range 10-6 to 10-2 C mm-2. The surface analysis results are compared with electron dose dependent secondary electron and electron stimulated desorption yield measurements. Initially the electron irradiation causes a surface cleaning through electron stimulated desorption, in particular of hydrogen. During this period both the electron stimulated desorption and secondary electron yield decrease as a function of electron dose. When the electron dose exceeds 10-4 C mm-2 electron stimulated desorption yields are reduced by several orders of magnitude and the electron beam indu...

  3. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  4. Influence of high energy electron irradiation and gamma irradiation on the osmotic resistance of human erythrocyte membranes

    International Nuclear Information System (INIS)

    Catana, D.; Hategan, Alina; Moraru, Rodica; Popescu, Alina; Morariu, V. V.

    1998-01-01

    The effects of 5 MeV electrons and of gamma irradiation at 0 deg. C on the osmotic fragility of human erythrocyte membranes are presented. Both electron and gamma radiation in the range 0-400 Gy induced no hemolysis indicating that the membrane modifications due to radiation interaction do not reach a critical point as to cause swelling of the cells and subsequent lysis. The osmotic stress experiments performed after irradiation showed that the gamma irradiated erythrocytes exhibited an almost similar sigmoidal behavior for all irradiation doses, whereas the electron irradiated samples showed a much larger increase in hemolysis degree and, in the case of a given electron dose (100 Gy), the hemolysis was found much smaller than for the control sample (a similar behavior of the erythrocytes was found in the case of microwave irradiation at temperatures under 0 deg. C). Our experimental data suggest that electron radiation and gamma radiation have different impacts on the erythrocyte membrane fluidity, involving, probably, the different rate of energy deposition in the samples and the direct interaction of electrons with the erythrocyte membranes. (authors)

  5. Further study of the glassy low-temperature properties of irradiated crystalline quartz: neutron and electron irradiation

    International Nuclear Information System (INIS)

    Laermans, C.; Daudin, B.

    1979-01-01

    Recently it has been shown that a quartz crystal after light fast neutron irradiation shows low temperature hypersonic properties which are similar to those found in glasses although the sample was still crystalline. Additional measurements have been carried out in the neutron-irradiated sample and a sample irradiated with high energy electrons has also been investigated. (Fast neutron dose 6 x 10 18 n/cm 2 , 2 MeV electron dose 3 x 10 19 e/cm 2 ). A magnetic field up to 1.5 T was found to have no influence in the hypersonic saturation behaviour of the neutron-irradiated sample (9 GHz, 1.65 K) and thermal conductivity measurements are consistent with a number of two level systems (2 LS) an order of magnitude lower than in vitreous silica as found before. Low temperature hypersonic measurements as a function of acoustic intensity and temperature as well as thermal conductivity measurements give no evidence for the presence of 2 LS in the electron irradiated sample. Considering the damage created in both samples this indicates that 2 LS are probably not related to point defects

  6. An AES Study of the Room Temperature Surface Conditioning of Technological Metal Surfaces by Electron Irradiation

    OpenAIRE

    Scheuerlein, C; Hilleret, Noël; Taborelli, M; Brown, A; Baker, M A

    2002-01-01

    The modifications to technological copper and niobium surfaces induced by 2.5 keV electron irradiation have been investigated in the context of the conditioning process occurring in particle accelerator ultra high vacuum systems. Changes in the elemental surface composition have been found using Scanning Auger Microscopy (SAM) by monitoring the carbon, oxygen and metal Auger peak intensities as a function of electron irradiation in the dose range 10-6 to 10-2 C mm-2. The surface analysis resu...

  7. Comparison of electron-irradiation and gamma-irradiation as a decontamination treatment of spices

    International Nuclear Information System (INIS)

    Hayashi, Toru; Todoriki, Setsuko; Mamun.

    1993-01-01

    Electron-irradiation at 10 kGy decontaminated all the eight kinds of spices (black pepper, white pepper, nutmeg, red pepper, parsley, paprika, laurel and onion powder) to the microbial levels lower than 10 2 /g. Similar sterilization effects by the irradiation were observed on heat-resistant bacterial spores. The 10 kGy irradiation did not significantly affect the contents of essential oils and colors of the spices. These results indicate that electron-irradiation at 10 kGy effectively decontaminates spices without notable adverse effect on the qualities. The disinfecting effect of electron beams on spices was smaller than that of gamma-rays. (author)

  8. Influence of electron irradiation on the structural and thermal properties of silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Asha, S.; Sangappa,; Sanjeev, Ganesh, E-mail: ganeshanjeev@rediffmail.com [Department of Studies in Physics, Mangalore University, Mangalagangotri, Mangalore - 574 199 (India)

    2015-06-24

    Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

  9. Annealing study of main electron irradiation-induced defects (H4 and H5) in P-In P using DLTS technique

    International Nuclear Information System (INIS)

    Massarani, B.; Awad, F.; Kaaka, M.

    1992-12-01

    Thermal annealing of the two hole traps H 4 and H 5 in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10 14 and 10 16 e/cm 2 . DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H 5 anneals out at about 150 C o with an activation energy of 1 eV. We have shown that H 4 is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with ΔE = 0.37 eV anneals out at about 110 C o . The other component, with ΔE = 0.50 eV is thermally stable even above 170 C o . (author). 13 refs., 17 figs., 2 tabs

  10. Charging kinetics in virgin and 1 MeV-electron irradiated yttria-stabilized zirconia in the 300-1000 K range

    International Nuclear Information System (INIS)

    Thome, T.; Braga, D.; Blaise, G.; Cousty, J.; Pham Van, L.; Costantini, J.M.

    2006-01-01

    A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (1 0 0)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1 MeV electrons is presented. When compared with virgin YSZ, the 1 MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient σ 0 and an increase of the time constant τ associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10 keV indicate that the defects induced by the 1 MeV-electron irradiation generate a positive electric field of the order of 0.5 x 10 6 V/m at a depth of about 1 μm that prevents electrons to escape. When the SEM beam with a 1.1 keV energy is used, a smaller field (∼0.5 x 10 3 V/m) is detected closer to the surface (∼20 nm). The fading of these fields during the thermal annealing in the 400-1000 K temperature range provides information on the nature of defects induced by the 1 MeV-electron irradiation

  11. A low temperature cryostat with a refrigerator for studying electron-irradiation effects on solids, 2

    International Nuclear Information System (INIS)

    Oka, Takashi; Yoshida, Toshio; Shono, Yoshihiko

    1978-01-01

    A convenient cryostat with a small cryogenic refrigerator for studying electron-irradiation effects on solids is reported. The lowest temperature at the sample room is about 10 K or less. In a temperature region below 80 K, the sample temperature can be controlled within 0.05 K. (auth.)

  12. In-situ observations of point-defect precipitation at dislocations in electron-irradiated silver

    International Nuclear Information System (INIS)

    Jenkins, M.L.; Hardy, G.J.; Kirk, M.A.

    1986-09-01

    In-situ weak-beam observations of the development of electron irradiation damage at dislocations in silver are described. Dislocations constrict and promote in their vicinity the formation of stacking-fault tetrahedra. The possibility that these are of interstitial nature is discussed

  13. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  14. Electron-irradiation induced changes in structural and magnetic properties of Fe and Co based metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Satalkar, M., E-mail: satalkar.manvi@gmail.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghosh, A.; Shah, M. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghodke, N. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Pramod, R.; Sinha, A.K.; Singh, M.N.; Dwivedi, J. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Coisson, M.; Celegato, F.; Vinai, F.; Tiberto, P. [INRIM, Electromagnetism Division, Strada Delle Cacce 91, I-10135 TO (Italy); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2014-12-05

    Highlights: • Enhancement of Ms by low electron irradiation dose in Fe-based alloy. • Variation of magnetic properties by electron irradiation induced ordered phase. • Electron irradiation alters TM-TM distance and, magnetic properties. - Abstract: Electron-irradiation induced changes in structural and, magnetic properties of Co{sub 57.6}Fe{sub 14.4}Si{sub 4.8}B{sub 19.2}Nb{sub 4}, Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} and, Co{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} metallic glasses were studied using magnetic hysteresis and, synchrotron X-ray diffraction measurements. Results reveal composition dependent changes of magnetic properties in electron irradiated metallic glasses. A low electron irradiation dose (15 kGy) enhances saturation magnetization (up to 62%) in Fe-based alloy (Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4}). Synchrotron XRD measurements reveal that electron irradiation transforms the amorphous matrix to a more ordered phase, accountable for changes in magnetic properties.

  15. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  16. Effect of electron irradiation on poly(vinylidene fluoride-trifluoroethylene) 56/44 mol% copolymers

    International Nuclear Information System (INIS)

    Guo, S S; Zhao, X-Z; Lu, S G; Lau, S T; Chan, H L W

    2004-01-01

    High-energy electron-irradiated poly(vinylidene fluoride-trifluoroethylene) 56/44 mol% copolymers are studied in a broad dose ranging from 0 to 110 Mrad. The experimental results are obtained by differential scanning calorimetry (DSC), x-ray diffraction, dielectric constant, dc conductivity and polarization hysteresis loop based on structural changes and dielectric relaxation behaviour. All the x-ray and DSC results show that both the crystalline and polar ordering decreased after irradiation, indicating a partial recovery from trans-gauche bonds to local trans bonds (polar ordering). The dielectric relaxation peaks, obeying the Vogel-Fulcher Law, indicate that the copolymers have transformed from a normal ferroelectric to a relaxor ferroelectric. It is also found that dc conductivity can be modulated with electron irradiation, as well as the hysteresis loop characteristics

  17. Electron Irradiation of Conjunctival Lymphoma-Monte Carlo Simulation of the Minute Dose Distribution and Technique Optimization

    Energy Technology Data Exchange (ETDEWEB)

    Brualla, Lorenzo, E-mail: lorenzo.brualla@uni-due.de [NCTeam, Strahlenklinik, Universitaetsklinikum Essen, Essen (Germany); Zaragoza, Francisco J.; Sempau, Josep [Institut de Tecniques Energetiques, Universitat Politecnica de Catalunya, Barcelona (Spain); Wittig, Andrea [Department of Radiation Oncology, University Hospital Giessen and Marburg, Philipps-University Marburg, Marburg (Germany); Sauerwein, Wolfgang [NCTeam, Strahlenklinik, Universitaetsklinikum Essen, Essen (Germany)

    2012-07-15

    Purpose: External beam radiotherapy is the only conservative curative approach for Stage I non-Hodgkin lymphomas of the conjunctiva. The target volume is geometrically complex because it includes the eyeball and lid conjunctiva. Furthermore, the target volume is adjacent to radiosensitive structures, including the lens, lacrimal glands, cornea, retina, and papilla. The radiotherapy planning and optimization requires accurate calculation of the dose in these anatomical structures that are much smaller than the structures traditionally considered in radiotherapy. Neither conventional treatment planning systems nor dosimetric measurements can reliably determine the dose distribution in these small irradiated volumes. Methods and Materials: The Monte Carlo simulations of a Varian Clinac 2100 C/D and human eye were performed using the PENELOPE and PENEASYLINAC codes. Dose distributions and dose volume histograms were calculated for the bulbar conjunctiva, cornea, lens, retina, papilla, lacrimal gland, and anterior and posterior hemispheres. Results: The simulated results allow choosing the most adequate treatment setup configuration, which is an electron beam energy of 6 MeV with additional bolus and collimation by a cerrobend block with a central cylindrical hole of 3.0 cm diameter and central cylindrical rod of 1.0 cm diameter. Conclusions: Monte Carlo simulation is a useful method to calculate the minute dose distribution in ocular tissue and to optimize the electron irradiation technique in highly critical structures. Using a voxelized eye phantom based on patient computed tomography images, the dose distribution can be estimated with a standard statistical uncertainty of less than 2.4% in 3 min using a computing cluster with 30 cores, which makes this planning technique clinically relevant.

  18. Self-interstitials and Frenkel pairs in electron-irradiated germanium

    International Nuclear Information System (INIS)

    Carvalho, A.; Jones, R.; Goss, J.; Janke, C.; Coutinho, J.; Oberg, S.; Briddon, P.R.

    2007-01-01

    First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the defect. The theoretical model is compared to the results of low temperature electron irradiation in germanium reported in the literature

  19. Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

    Science.gov (United States)

    Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

    2008-03-01

    Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

  20. Calculation of diffraction patterns associated with electron irradiation induced amorphization of CuTi

    International Nuclear Information System (INIS)

    Devanathan, R.; Meshii, M.; Sabochik, M.J.

    1990-11-01

    A new approach that uses the multislice method in conjunction with molecular dynamics simulations to study electron irradiation induced amorphisation is presented. Diffraction patterns were calculated for CuTi and found to be more sensitive than the pair correlation function to the structural changes preceding amorphisation. The results from this approach and from a study of long range order are presented. 16 refs., 8 figs

  1. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  2. Total skin electron irradiation: evaluation of dose uniformity throughout the skin surface

    International Nuclear Information System (INIS)

    Anacak, Yavuz; Arican, Zumre; Bar-Deroma, Raquel; Tamir, Ada; Kuten, Abraham

    2003-01-01

    In this study, in vivo dosimetic data of 67 total skin electron irradiation (TSEI) treatments were analyzed. Thermoluminescent dosimetry (TLD) measurements were made at 10 different body points for every patient. The results demonstrated that the dose inhomogeneity throughout the skin surface is around 15%. The homogeneity was better at the trunk than at the extratrunk points, and was worse when a degrader was used. There was minimal improvement of homogeneity in subsequent days of treatment

  3. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    International Nuclear Information System (INIS)

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-01-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

  4. Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

    International Nuclear Information System (INIS)

    Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

    2015-01-01

    In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

  5. Structural changes and tribological performance of thermosetting polyimide induced by proton and electron irradiation

    International Nuclear Information System (INIS)

    Lv, Mei; Wang, Yanming; Wang, Qihua; Wang, Tingmei; Liang, Yongmin

    2015-01-01

    The structural changes and tribological performance of thermosetting polyimide were investigated by electron, proton or both combined irradiations at 25 keV in a ground-based simulation facility. Three forms of irradiations could lead to the formation of the carbonized layer on the polymer surface that could increase the hardness and adhesive force of the material. Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation by reason of the higher linear energy transfer value, and combined irradiation resulted in the largest impact, but which was less than the sum of the radiation effects of electron and proton. Moreover, the experimental results indicated that the changes in friction behavior are closely related with the carbonized layer, which was easily worn out in friction process and could introduce a shift from adhesion wear to three-body abrasive wear that reduced the wear rate and the friction coefficient. The friction process of irradiated samples could be divided into the initial stage and the steady stage. Three forms of irradiations all induced the high friction coefficient in the initial stage and the low friction coefficient in the steady stage, and the wear rate of the irradiated samples decreased in the order: electron irradiation>proton irradiation>combined irradiation. - Highlights: • Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation. • The effect of combined irradiation was less than that of the sum of electron and proton irradiation. • Three forms of irradiations all induced the high initial friction coefficient and the low steady-stage friction coefficient. • The initial friction stage means a fast-wearing adhesive process while the steady-state of the system is a three-body abrasion

  6. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  7. Application of clear polymethylmethacrylate dosimeter Radix W to a few MeV electron in radiation processing

    International Nuclear Information System (INIS)

    Seito, Hajime; Ichikawa, Tatsuya; Hanaya, Hiroaki; Sato, Yoshishige; Kaneko, Hirohisa; Haruyama, Yasuyuki; Watanabe, Hiroshi; Kojima, Takuji

    2009-01-01

    Characteristics of clear PMMA dosimeter (Radix W) were studied for electron irradiation and compared with the response for gamma irradiation. The dose-response curves were nearly linear up to 30 kGy and become sublinear at higher doses. The radiation-induced absorbance was reduced with 6% within 4 h after irradiation. Dose comparisons were performed for 2, 3, 4 and 5 MeV electron irradiation using cellulose triacetate dosimeter (CTA) (FTR-125) and Radix W dosimeters which were independently calibrated for 2 MeV electrons and 60 Co gamma-rays using calorimeter and ionizing chamber, respectively. The doses estimated by CTA and Radix W were different by about 20%. The magnitude of this difference was, however, independent of electron energy.

  8. Annihilation characteristics in as-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; La Cruz, R.M. de; Pareja, R.

    1991-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of Zns, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. Zns and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of Zns, ZnSe and ZnTe, respectively. 8 refs., 3 figs

  9. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    OpenAIRE

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

  10. /sup 57/Co Moessbauer study of the recovery process of electron-irradiated gold

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, I.; Nasu, S.; Fujita, F.E.

    1988-03-15

    The recovery process of Au--10-at. ppm-Co alloy after electron irradiation at 78 K was investigated by means of /sup 57/Co emission Moessbauer spectroscopy. Three satellite lines were observed and assigned to the small interstitial(I)--Co complexes, the micro-I-loops containing Co atoms and the divacancy-Co complexes, respectively. A fairly strong binding energy between the interstitial and Co atoms in small I-Co complexes, most probably larger than 0.2 eV, was deduced

  11. Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.

    1985-01-01

    This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

  12. Origin of the main deep electron trap in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  13. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dantelle, G., E-mail: geraldine.dantelle@polytechnique.ed [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Slablab, A.; Rondin, L. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laine, F.; Carrel, F.; Bergonzo, Ph. [CEA-LIST, CEA/Saclay, 91 191 GIF-SUR-YVETTE Cedex (France); Perruchas, S.; Gacoin, T. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Treussart, F.; Roch, J.-F. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France)

    2010-09-15

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  14. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    International Nuclear Information System (INIS)

    Dantelle, G.; Slablab, A.; Rondin, L.; Laine, F.; Carrel, F.; Bergonzo, Ph.; Perruchas, S.; Gacoin, T.; Treussart, F.; Roch, J.-F.

    2010-01-01

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  15. Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

    Science.gov (United States)

    Maslovskaya, A. G.; Barabash, T. K.

    2018-03-01

    The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

  16. Annihilation characteristics in As-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.; Moser, P.

    1992-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of ZnS, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. ZnS and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of ZnS, ZnSe and ZnTe, respectively

  17. Effect of electron irradiation on the surface properties of Ge-Si single crystals

    International Nuclear Information System (INIS)

    Bakirov, M.Ya.; Ibragimov, N.I.

    1998-01-01

    It is established that by electron irradiation of the Ge 1-x Si x (x = 0 - 0.15) monocrystals with the dose of ≤ 10 13 cm -2 the concentration of the surface charged centers N t does not change. Some drop in the N t value with tendency to saturation is observed by increase in the dose. The speed of the surface recombination also grows with tendency to saturation. Monotonous growth of the surface recombination is identified by increase in dislocations density [ru

  18. Subthreshold displacement damage in copper--aluminum alloys during electron irradiation

    International Nuclear Information System (INIS)

    Drosd, R.; Kosel, T.; Washburn, J.

    1976-12-01

    During electron irradiation at low energies which results in a negligible damage rate in a pure material, lighter solute atoms are displaced, which may in turn indirectly displace solvent atoms by a focussed replacement collision or an interstitial diffusion jump. The extent to which lighter solute atoms contribute to the subthreshold damage rate has been examined by irradiating copper--aluminum alloys at high temperatures in a high voltage electron microscope. The damage rate, as measured by monitoring the growth rate of dislocation loops, at 300 kV was found to increase linearly with the aluminum concentration

  19. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  20. Lithium compensation of GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Tavendale, A.J.

    1988-08-01

    Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

  1. The dose penumbra of a custom-made shield used in hemibody skin electron irradiation.

    Science.gov (United States)

    Rivers, Charlotte I; AlDahlawi, Ismail; Wang, Iris Z; Singh, Anurag K; Podgorsak, Matthew B

    2016-11-08

    We report our technique for hemibody skin electron irradiation with a custom-made plywood shield. The technique is similar to our clinical total skin electron irradiation (TSEI), performed with a six-pair dual field (Stanford technique) at an extended source-to-skin distance (SSD) of 377 cm, with the addition of a plywood shield placed at 50 cm from the patient. The shield is made of three layers of stan-dard 5/8'' thick plywood (total thickness of 4.75 cm) that are clamped securely on an adjustable-height stand. Gafchromic EBT3 films were used in assessing the shield's transmission factor and the extent of the dose penumbra region for two different shield-phantom gaps. The shield transmission factor was found to be about 10%. The width of the penumbra (80%-to-20% dose falloff) was measured to be 12 cm for a 50 cm shield-phantom gap, and reduced slightly to 10 cm for a 35 cm shield-phantom gap. In vivo dosimetry of a real case confirmed the expected shielded area dose. © 2016 The Authors.

  2. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    Science.gov (United States)

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

  3. Improved calculation of displacements per atom cross section in solids by gamma and electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Piñera, Ibrahin, E-mail: ipinera@ceaden.edu.cu [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Cruz, Carlos M.; Leyva, Antonio; Abreu, Yamiel; Cabal, Ana E. [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Espen, Piet Van; Remortel, Nick Van [University of Antwerp, CGB, Groenenborgerlaan 171, 2020 Antwerpen (Belgium)

    2014-11-15

    Highlights: • We present a calculation procedure for dpa cross section in solids under irradiation. • Improvement about 10–90% for the gamma irradiation induced dpa cross section. • Improvement about 5–50% for the electron irradiation induced dpa cross section. • More precise results (20–70%) for thin samples irradiated with electrons. - Abstract: Several authors had estimated the displacements per atom cross sections under different approximations and models, including most of the main gamma- and electron-material interaction processes. These previous works used numerical approximation formulas which are applicable for limited energy ranges. We proposed the Monte Carlo assisted Classical Method (MCCM), which relates the established theories about atom displacements to the electron and positron secondary fluence distributions calculated from the Monte Carlo simulation. In this study the MCCM procedure is adapted in order to estimate the displacements per atom cross sections for gamma and electron irradiation. The results obtained through this procedure are compared with previous theoretical calculations. An improvement in about 10–90% for the gamma irradiation induced dpa cross section is observed in our results on regard to the previous evaluations for the studied incident energies. On the other hand, the dpa cross section values produced by irradiation with electrons are improved by our calculations in about 5–50% when compared with the theoretical approximations. When thin samples are irradiated with electrons, more precise results are obtained through the MCCM (in about 20–70%) with respect to the previous studies.

  4. Study of point defect mobilities in zirconium during electron irradiation in a HVEM

    International Nuclear Information System (INIS)

    Griffiths, M.

    1993-01-01

    A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

  5. Influence of Electron Irradiation Factor on Haruan Traditional Extract (HTE) for Oral Drug Delivery

    International Nuclear Information System (INIS)

    Ibrahim Ijang; Abdul Manan, M.J.; Kamaruddin Hashim

    2014-01-01

    Haruan or Channa striatus is source of protein, Haruan extract is well known in the region for having a medicinal quality and widely consumed. It is great advantage if this product could be administered by oral rather than injection because oral route of drug delivery is still preferred by the vast majority of patients. However protein and peptides can be denatured or degraded by conditions included the acidic pH of the stomach and presence of endogenous enzymes. In order to protect or prevent digestion and degradation of the protein in the stomach and to ensure the protein reach to gastro intestinal (GI) tract, CMS nano gel system was developed using electron irradiation method. However stability of HTE toward radiation needed to be ensured before being used for the next level. In this study, the HTE was radiated with electron radiation. Its stability was analysed in term of physical aspect by looking at the colour difference, melting point by using Differential Scanning Calorimetry (DSC) and in terms of chemical aspect which include molecular bonds by using Fourier Transform Infrared (FTIR). The results of this study were that no apparent colour difference was seen on the HTE before and after irradiation. Those are supported by FTIR and DSC analysis results that showed that there were no change of molecular bonds and melting point, compared between no irradiation and irradiation HTE during electron irradiation up to 10 kGy. Statistically the test showed no significant difference at p<0.005 within melting temperatures. (author)

  6. Effects of electron irradiation in space environment on thermal and mechanical properties of carbon fiber/bismaleimide composite

    International Nuclear Information System (INIS)

    Yu, Qi; Chen, Ping; Gao, Yu; Ma, Keming; Lu, Chun; Xiong, Xuhai

    2014-01-01

    Highlights: •Electron irradiation decreased the storage modulus finally. •T g decreased first and then increased and finally decreased. •The thermal stability was reduced and then improved and finally decreased. •The changing trend of flexural strength and ILSS are consistent. -- Abstract: The effects of electron irradiation in simulated space environment on thermal and mechanical properties of high performance carbon fiber/bismaleimide composites were investigated. The dynamic mechanical properties of the composites exposed to different fluences of electron irradiation were evaluated by Dynamic mechanical analysis (DMA). Thermogravimetric analysis was applied to investigate the changes in thermal stability of the resin matrix after exposure to electron irradiation. The changes in mechanical properties of the composites were evaluated by flexural strength and interlaminar shear strength (ILSS). The results indicated that electron irradiation in high vacuum had an impact on thermal and mechanical properties of CF/BMI composites, which depends on irradiation fluence. At lower irradiation fluences less than 5 × 10 15 cm −2 , the dynamic storage modulus, cross-linking degree, thermal stability and mechanical properties that were determined by a competing effect between chain scission and cross-linking process, decreased firstly and then increased. While at higher fluences beyond 5 × 10 15 cm −2 , the chain scission process was dominant and thus led to the degradation in thermal and mechanical properties of the composites

  7. Model of deep centers formation and reactions in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.; Gilleron, M.

    1986-01-01

    We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

  8. Energy and orientation dependence of electron-irradiation-induced defects in InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.; LeRoux, G.

    1984-01-01

    The concentration of several electron-irradiation-induced deep defect levels in InP has been measured by deep-level transient spectroscopy (DLTS) as a function of electron energy. The dominant centers exhibit a threshold at about 100 keV, which clearly points to a primary production event by electron--phosphorus-atom collision. This unambiguous determination allowed a test of the recently proposed orientation dependence technique to find the nature of the sublattice involved in the collision process for III-V compounds. A good quantitative agreement is obtained with a hard-sphere model for secondary collisions if disorientation of the beam in the sample is taken into account. Other traps exhibit higher thresholds which correspond either to indium-atom displacements or to the involvement of secondary collisions in the production event

  9. Interstitial loop growth in electron irradiated vacuum-remelted FV448

    International Nuclear Information System (INIS)

    Buswell, J.T.; Fisher, S.B.

    1979-05-01

    An investigation of the resistance to void swelling of the ferritic steel FV448 has been made in electron irradiation experiments in a High Voltage Electron Microscope. Overaged samples of vacuum-remelted FV448 showed zero swelling after irradiation to doses of up to 30 dpa, in the temperature range 400 to 550 0 C. The resistance to void swelling was due to the absence of mutual interaction between interstitial loops. Impurity segregation to the loops, and precipitation, prevented continuous dislocation climb, thus removing biased sinks from the system at low doses. An interstitial-impurity binding energy of 0.5 eV was measured, suggesting that the impurity responsible was carbon or nitrogen. Some effects attributable to the heating of thin foils in the HVEM environment were detected. (author)

  10. Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

    2015-01-01

    Highlights: • Carbon contamination mechanisms of electron-beam-irradiated hydroxyapatite. • Atomic force microscopy phase imaging used to detect carbon contamination. • Carbon contamination dependence on electron energy, irradiation time, beam current. • Simulation of backscattered electrons confirms the experimental results. - Abstract: Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed

  11. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    International Nuclear Information System (INIS)

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  12. Interface-mediated amorphization of coesite by 200 keV electron irradiation

    International Nuclear Information System (INIS)

    Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

    1997-01-01

    Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

  13. Simulating Neutron Radiation Damage of Graphite by In-situ Electron Irradiation

    International Nuclear Information System (INIS)

    Mironov, Brindusa E; Freeman, H M; Brydson, R M D; Westwood, A V K; Scott, A J

    2014-01-01

    Radiation damage in nuclear grade graphite has been investigated using transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). Changes in the structure on the atomic scale and chemical bonding, and the relationship between each were of particular interest. TEM was used to study damage in nuclear grade graphite on the atomic scale following 1.92×10 8 electrons nm −2 of electron beam exposure. During these experiments EELS spectra were also collected periodically to record changes in chemical bonding and structural disorder, by analysing the changes of the carbon K-edge. Image analysis software from the 'PyroMaN' research group provides further information, based on (002) fringe analysis. The software was applied to the micrographs of electron irradiated virgin 'Pile Grade A' (PGA) graphite to quantify the extent of damage from electron beam exposure

  14. Effect of electron-irradiation on the free volume of PEEK studied by positron annihilation

    International Nuclear Information System (INIS)

    Kobayashi, Y.; Haraya, K.; Hattori, S.; Sasuga, T.

    1994-01-01

    A good linear correlation was found between the size of a cavity where ortho-positronium (o-Ps) annihilates by the pick-off mechanism and the total free volume of molecular liquids and polymers. Based on the correlation, the free volume of poly(aryl ether-ether ketone) (PEEK) was evaluated as a function of electron irradiation dose and the result was compared with that obtained from gas diffusivity measurements. It was found that the effect of irradiation on the free volume of PEEK was rather small; the free volume was decreased only by a few percent (relative value) when the samples were irradiated with a dose of 50 MGy in air. ((orig.))

  15. Analysis of electron-irradiated poly-ether ether ketone by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Oyabu, Matashige; Kobayashi, Yoshinori; Seguchi, Tadao; Sasuga, Tsuneo; Kudoh, Hisaaki.

    1995-01-01

    Organic polymers used in atomic power plants or space are damaged by ionizing irradiation. Radicals produced by irradiation cause oxidation, chain scission and crosslinking, all of which lead to degradation of the material. In this paper, the surface of electron-irradiated poly-ether ether ketone (PEEK) was studied by X-ray photoelectron spectroscopy (XPS). The irradiation in air was found to oxidize the PEEK surface producing carboxyl groups, the content of which dependant on the dose. Carboxyl groups were not produced in helium gas. Quantitative spectral analysis indicated that the aromatic structure might be decomposed. Some comparison was made between the semicrystalline and amorphous samples. The oxygen content resulting from irradiation, of semicrystalline PEEK increased more than that of amorphous PEEK. (author)

  16. Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

    International Nuclear Information System (INIS)

    Zhong, Z.Q.; Wu, D.X.; Gong, M.; Wang, O.; Shi, S.L.; Xu, S.J.; Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2006-01-01

    Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S 1 , S 2 , S 3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S 1 , S 2 , S 3 disappeared at 500 deg. C. However, the well-known D 1 center was only detected for annealing temperatures over 700 deg. C. This experimental observation not only indicated that the defects S 1 , S 2 , S 3 were a set of primary defects and the D 1 center was a kind of secondary defect, but also showed that the D 1 center and the E 1 , E 2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin

  17. Kinetics of radiation-induced structural alterations in electron-irradiated polymer-based composites

    International Nuclear Information System (INIS)

    Zaikin, Yu.A.; Potanin, A.S.; Koztaeva, U.P.

    2002-01-01

    Complete text of publication follows. In our previous studies measurements of internal friction temperature dependence were used for characterization of thermally activated and radiation-induced structural evolution in different types of polymer-based composites. This paper supplements these measurements with kinetic studies of internal friction (IF) parameters and EPR signals in a glass-cloth epoxy-filled laminate ST-ETF after electron irradiation up to doses of 1-10 MGy. Experiment have shown that the lifetime of free radicals in this composite considerably exceeds the characteristic time of molecular structural rearrangement due to scission and cross-linking after irradiation, as determined from IF measurements. This result is explained by slow proceeding of sterically hindered disproportionation reactions that stabilize the end groups of the macro-chain disrupt during irradiation and finally fix the act of scission. A mathematical model is formulated for description of structural evolution and alterations of IF parameters in polymer-based composites during and after electron irradiation. The description is based on the track model of radiation damage in polymers and phenomenological theory of radiation-induced structural transformations. General description does not give details of radiation-chemical conversion in different structural components of composites but indicates the direction of their structural evolution. In the model considered a composite material was divided into three parts (binder, filler, and a boundary layer). It was supposed that after primary distribution of radiation energy radiation-chemical conversion proceeds independently in each of these regions. It was also suggested that all the radical reactions were of the second order. On the example of glass-cloth laminate ST-ETF it is shown that this model allows to describe alterations in composite structural characteristics during irradiation and in the course of their self-organization after

  18. Electron irradiation effect of polyurethane using coincidence doppler-broadening spectroscopy

    International Nuclear Information System (INIS)

    Yang, D.J.; Zhang, J.D.; Leung, J.K.C.; Beling, C.D.; Liu, L.B.

    2006-01-01

    Full text: To understand the electron irradiation effects on polymer, polyether-urethane (ETPU) samples of 2m m in thickness and 1 0 m m in diameter were irradiated by a 1.8M eV electron beam with beam current of 3 ma at room temperature. The irradiated doses are 5 kGy, 10 kGy, 15 kGy, 30 kGy, 100 kGy and 150 kGy. ETPU was manufactured by mixing PTMG-100, TDI-100 and MOCA. The momentum density distributions (MMDs) of electrons taking part in the annihilation processes of positron-electron pairs in ETPU have been measured by coincidence Doppler-broadening spectroscopy (CDBS). By presenting the ratio of the counts in every channel of the measured CDB spectrum to the corresponding counts from a reference spectrum (pristine ETPU), we observed that the change in MMDs is not significant for doses lower than 10 kGy. However, high momentum part of MMDs exhibit an obvious decrease for dose exceeding 15 kGy and then slowly down to steady with doses until 150 kGy. This valley occurs at around 15 x1 0 3m οc and is well known as oxygen-specific, indicative of a less positron trapping by oxygen atoms in some samples of higher dose radiation. It is postulated that the radiation will break the crosslinkings, allowing the trace water and oxygen molecules to be released from the sample surface. Excess NCO groups in ETPU would crosslink with urethane and urea groups to produce allophanate and biuret groups. After receiving a certain amount of electron irradiation, crosslinked allophanate and biuret groups would produce degradation. Thus, residual water and oxygen trapped in ETPU by the crosslinking would diffuse out. However, the irradiation doses up to 150 kGy in this experiment are still not large enough to induce strong degradation of urethane and urea groups

  19. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  20. Diffusion of interstitial atoms in FCC metals after irradiation with 2 MeV electrons

    International Nuclear Information System (INIS)

    Kornmann, H.

    1980-01-01

    Selfdiffusion in nickel after electron irradiation has been restudied. The diffusion velocity near the surface and the diffusion constant in the interior of the crystal have been determined as a function of radiation flux and temperature. A special method for the measurement of diffusion has been improved, which is based on radioactive tracer atoms for indication and on ion etching for the removal of thin films. To improve additionally the accuracy of the technique tracer atoms are induced into the crystal by thermal diffusion and then irradiated with 2 MeV electrons. (orig./GSCH) [de

  1. Minimising contralateral breast dose in post-mastectomy intensity-modulated radiotherapy by incorporating conformal electron irradiation

    NARCIS (Netherlands)

    van der Laan, Hans Paul; Korevaar, Erik W; Dolsma, Willemtje; Maduro, John H; Langendijk, Johannes A

    PURPOSE: To assess the potential benefit of incorporating conformal electron irradiation in intensity-modulated radiotherapy (IMRT) for loco-regional post-mastectomy RT. PATIENTS AND METHODS: Ten consecutive patients that underwent left-sided mastectomy were selected for this comparative planning

  2. Stability of radicals in electron-irradiated fluoropolymer film for the preparation of graft copolymer fuel cell electrolyte membranes

    DEFF Research Database (Denmark)

    Larsen, Mikkel Juul; Ma, Yue; Qian, Huan

    This presentation concerns the stability of radicals generated in poly(ethylene-alt-tetra­fluoro­ethylene) (ETFE) film by electron irradiation prior to grafting of styrene onto this base material. It has been demonstrated that the grafting yield decreases as the storage time of the irradiated fil...

  3. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    International Nuclear Information System (INIS)

    Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-01-01

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  4. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    Energy Technology Data Exchange (ETDEWEB)

    Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-05-15

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  5. Mass and energy dispersive recoil spectrometry of GaAs structures

    International Nuclear Information System (INIS)

    Hult, M.

    1994-01-01

    Mass and energy dispersive Recoil Spectrometry (RS) using heavy ions at energies of about 0.2Α-0.8Α MeV has attracted much interest recently due to its potential for separately and unambiguously generating information on isotopic depth distributions. The principal advantages of mass and energy dispersive RS are that both light and heavy elements can be separately studied simultaneously and problems caused by chemical matrix effects are avoided since the technique is based on high energy nucleus-nucleus scattering. In order to elucidate reactions taking place in various GaAs structures, Time of flight-Energy (ToF-E) RS was developed to allow Ga and As to be studied separately down to depths of about 500-800 nm with a depth resolution of about 16 nm at the surface. This was shown in a study of an Al x Ga 1-x As quantum-well structure. The benefits of using ToF-E RS on GaAs structures were further demonstrated in studies of Co/GaAs and CoSi 2 /GaAs reactions, as well as in a study of the composition of MOCVD grown Al x Ga 1-x As. Most recoil measurements employed 127 I at energies of about 50-90 MeV as projectiles. The recoil detector telescope consisted of a silicon energy detector and two carbon foil time pick-off detectors separated by a variable flight length of 213.5-961 mm. The reactions taking place between various thin films and GaAs were also studied using complementary techniques such as XRD, XPS and SEM. Co was found to react extensively with GaAs, already at about 300 degrees C, making it unsuitable as a contact material. Thin films of Co and Si were found to react extensively with each other and to form CoSi 2 at 500 degrees C and above. CoSi 2 , a low resistivity silicide, turned out to be stable on GaAs, at least up to 700 degrees C. Considerable grain growth could cause problems, however, in the use of CoSi 2 -contacts. 112 refs, figs, tabs

  6. Free volume modifications in chalcone chromophore doped PMMA films by electron irradiation: Positron annihilation study

    Science.gov (United States)

    Ismayil; Ravindrachary, V.; Praveena, S. D.; Mahesha, M. G.

    2018-03-01

    The free volume related fluorescence behaviour in electron beam irradiated chalcone chromophore doped Poly(methyl methacrylate) (PMMA) composite films have been studied using FTIR, UV-Visible, XRD and Positron Annihilation techniques. From the FTIR spectral study it is found that the formation of polarons and bipolaron takes place due to cross linking as well as chain scission processes at lower and higher doses respectively. It reveals that the formation of various polaronic defect levels upon irradiation is responsible for the creation of three optical energy band gaps within the polymer films as obtained from UV-Visible spectra. The crosslinking process at lower doses increases the distance between the pendant groups to reduce the interchain distance and chain scission process at higher doses decreases interchain separation to enhance the number of polarons in the polymer composites as suggested by XRD studies. The fluorescence studies show the enhancement of fluorescence emission at lower doses and reduction at higher doses under electron irradiation. The positron annihilation study suggests that the low radiation doses induce crosslinking which affect the free volume properties and in turn hinders the chalcone molecular rotation within the polymer composite. At higher doses chain scission process support polymer matrix relaxation and facilitates non-radiative transition of the chromophore upon excitation. This study shows that fluorescence enhancement and mobility of chromophore within the polymer matrix is directly related to the free volume around it.

  7. Pathogens Inactivated by Low-Energy-Electron Irradiation Maintain Antigenic Properties and Induce Protective Immune Responses

    Science.gov (United States)

    Fertey, Jasmin; Bayer, Lea; Grunwald, Thomas; Pohl, Alexandra; Beckmann, Jana; Gotzmann, Gaby; Casado, Javier Portillo; Schönfelder, Jessy; Rögner, Frank-Holm; Wetzel, Christiane; Thoma, Martin; Bailer, Susanne M.; Hiller, Ekkehard; Rupp, Steffen; Ulbert, Sebastian

    2016-01-01

    Inactivated vaccines are commonly produced by incubating pathogens with chemicals such as formaldehyde or β-propiolactone. This is a time-consuming process, the inactivation efficiency displays high variability and extensive downstream procedures are often required. Moreover, application of chemicals alters the antigenic components of the viruses or bacteria, resulting in reduced antibody specificity and therefore stimulation of a less effective immune response. An alternative method for inactivation of pathogens is ionizing radiation. It acts very fast and predominantly damages nucleic acids, conserving most of the antigenic structures. However, currently used irradiation technologies (mostly gamma-rays and high energy electrons) require large and complex shielding constructions to protect the environment from radioactivity or X-rays generated during the process. This excludes them from direct integration into biological production facilities. Here, low-energy electron irradiation (LEEI) is presented as an alternative inactivation method for pathogens in liquid solutions. LEEI can be used in normal laboratories, including good manufacturing practice (GMP)- or high biosafety level (BSL)-environments, as only minor shielding is necessary. We show that LEEI efficiently inactivates different viruses (influenza A (H3N8), porcine reproductive and respiratory syndrome virus (PRRSV), equine herpesvirus 1 (EHV-1)) and bacteria (Escherichia coli) and maintains their antigenicity. Moreover, LEEI-inactivated influenza A viruses elicit protective immune responses in animals, as analyzed by virus neutralization assays and viral load determination upon challenge. These results have implications for novel ways of developing and manufacturing inactivated vaccines with improved efficacy. PMID:27886076

  8. Defect structures in YBa2Cu3O/sub 7-x/ produced by electron irradiation

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1987-12-01

    Defect structures in YBa 2 Cu 3 O/sub 7-x/ produced by electron irradiation at 300 0 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b > a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3 x 10 18 cm -2 s -1 , extended defects were observed to form and grow to sizes of 10 to 50 nm over 1000 s in material thicknesses 20 to 200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis. 3 refs., 3 figs

  9. A 20 keV electron gun system for the electron irradiation experiments

    International Nuclear Information System (INIS)

    Mahapatra, S.K.; Dhole, S.D.; Bhoraskar, V.N.

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 μA. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure ∼10 -7 mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours

  10. ACPSEM ROSG TBE working group recommendations for quality assurance in total body electron irradiation

    International Nuclear Information System (INIS)

    Nelligan, Raelene; Baldwin, Zoe; Ostwald, Trish; Tran, Thi; Bailey, Michael

    2015-01-01

    The Australasian College of Physical Scientists and Engineers in Medicine (ACPSEM) Radiation Oncology Specialty Group (ROSG) formed a series of working groups in 2011 to develop recommendations for guidance of radiation oncology medical physics practice within the Australasian setting. These recommendations are intended to provide guidance for safe work practices and a suitable level of quality control without detailed work instructions. It is the responsibility of the medical physicist to ensure that locally available equipment and procedures are sufficiently sensitive to establish compliance to these recommendations. The recommendations are endorsed by the ROSG, and have been subject to independent expert reviews. For the Australian readers, these recommendations should be read in conjunction with the Tripartite Radiation Oncology Reform Implementation Committee Quality Working Group: Radiation Oncology Practice Standards (2011), and Radiation Oncology Practice Standards Supplementary Guide (2011). This publication presents the recommendations of the ACPSEM ROSG Total Body Electron Irradiation Working Group and has been developed in alignment with other international associations. However, these recommendations should be read in conjunction with relevant national, state or territory legislation and local requirements, which take precedence over the ACPSEM recommendations. It is hoped that the users of this and other ACPSEM recommendations will contribute to the development of future versions through the Radiation Oncology Specialty Group of the ACPSEM. This document serves as a guideline for calibration and quality assurance of equipment used for TBE in Australasia.

  11. Effect of self-interstitial diffusion anisotropy in electron-irradiated zirconium: A cluster dynamics modeling

    International Nuclear Information System (INIS)

    Christien, F.; Barbu, A.

    2005-01-01

    A model based on the cluster dynamics approach was proposed in [A. Hardouin Duparc, C. Moingeon, N. Smetniansky-de-Grande, A. Barbu, J. Nucl. Mater. 302 (2002) 143] to describe point defect agglomeration in metals under irradiation. This model is restricted to materials where point defect diffusion is isotropic and is thus not applicable to anisotropic metals such as zirconium. Following the approach proposed by Woo [C.H. Woo, J. Nucl. Mater. 159 (1988) 237], we extended in this work the model to the case where self-interstitial atoms (SIA) diffusion is anisotropic. The model was then applied to the loop microstructure evolution of a zirconium thin foil irradiated with electrons in a high-voltage microscope. First, the inputs were validated by comparing the numerical results with Hellio et al. experimental results [C. Hellio, C.H. de Novion, L. Boulanger, J. Nucl. Mater. 159 (1988) 368]. Further calculations were made to evidence the effect of the thin foil orientation on the dislocation loop microstructure under irradiation. The result is that it is possible to reproduce for certain orientations the 'unexpected' vacancy loop growth experimentally observed in electron-irradiated zirconium [M. Griffiths, M.H. Loretto, R.E. Sallmann, J. Nucl. Mater. 115 (1983) 313; J. Nucl. Mater. 115 (1983) 323; Philos. Mag. A 49 (1984) 613]. This effect is directly linked to SIA diffusion anisotropy

  12. A 20 keV electron gun system for the electron irradiation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S.K. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India)]. E-mail: vnb@physics.unipune.ernet.in

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 {mu}A. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure {approx}10{sup -7} mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours.

  13. Ultrastructural changes following electron irradiation in three-dimensional culture of normal human dermal fibroblasts

    International Nuclear Information System (INIS)

    Han, Chunmao; Ishikura, Naotaka; Tsukada, Sadao

    1994-01-01

    The present study was designed to examine the effect of electron irradiation on fibroblasts and extracellular matrices electron-microscopically. The three-dimensional dermal fibroblast culture was exposed to one, 4 or 10 Gy of electron beams. One day after irradiation, fibroblasts were vacuolated in all irradiated groups and intercellular spaces were increased in a dose-dependent manner. Seven days later, intercellular spaces became dense in both one and 4 Gy groups, although they were still extremely increased in the 10 Gy group. The remaining fibroblasts were still activated in all groups. Thirty days after irradiation, myofibroblastic cells were scarcely observed, but extracellular fine fibrils and collagen fibrils were observed in all irradiated groups. The other ultrastructural findings were similar to those in the control group. In conclusion, electron beams damaged not only cells but also extracellular matrix. The extracellular matrix may be repaired by activated residual fibroblasts, resulting in the mixture of new and old collagen fibrils having different diamters. (N.K.)

  14. Radiation induced coloring of glasses measured during and after electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Hardy, W.H. II; Levy, P.W.

    1975-01-01

    The growth of color centers during irradiation, and the decay after irradiation, were studied in two glasses using recently developed equipment for making optical absorption and luminescence measurements during and after electron irradiation. The glasses studied were NBS 710, a soda-lime silicate glass, and NBS 711, a lead silicate glass. Both glasses exhibit similar coloring characteristics. The radiation-induced absorption spectra consists of a weak gaussian shaped band in the visible, a stronger gaussian band in the ultraviolet, and a band edge ''shift'' which may be accurately approximated by a third gaussian band. For all absorption bands, the color center vs dose (or irradiation time) curves can be accurately resolved into two saturating exponential and one linear component. The decay curves obtained after the irradiation is terminated can be accurately expressed by three exponential components. Coloring and decay curves made at different dose rates indicate that the processes responsible for decay after irradiation and electron hole recombination during irradiation play important roles in determining the rate and extent of coloring. Results are qualitatively in agreement with some very simple kinetic treatments for color center formation. In some, but not all, respects the quantitative agreement is also good. Lastly, the results indicate that it is necessary to make measurements during irradiation to establish the formation kinetics of color centers that are unstable at the bombardment temperature. (U.S.)

  15. Analysis of radiation damage to Si solar cells under high-fluence electron irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Yang, Ming-Ju; Matsuda, Sumio; Kawasaki, Osamu; Hisamatsu, Tadashi.

    1996-01-01

    Radiation testing of Si n + -p-p + space solar cells has revealed an anomalous increase in short-circuit current I sc , followed by an abrupt decrease and cell failure, induced by high-fluence (>10 16 cm -2 ) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells. (author)

  16. Experience with Exacin ointment for erosive dermatitis arising after X-ray and electron irradiation

    International Nuclear Information System (INIS)

    Suzuki, Yoshihiko

    1995-01-01

    An ointment containing Exacin (isepamicin sulfate) was used to prevent infection in 12 female patients with erosive (acute) or chronic dermatitis caused by X-ray and electron irradiation. Underlying diseases were skin metastasis from breast cancer (n=3), advanced cervical cancer (n=3), positive margin of cervical cancer (n=2), vaginal cancer (n=2), recurrence of rectal cancer (n=one), and vulvar cancer (n=one). Exacin ointment (a daily dose of approximately 6 g) was applied in two or more divided doses to lesions in the vulva (n=9), axillary chest wall (n=one), and chest wall (n=2) for 16-65 days in the group of erosive radiodermatitis (n=10) and for 3-10 months in the group of chronic radiodermatitis (n=2). In the group of erosive radiodermatitis, 8 were evaluated as remarkably improved; in the group of chronic radiodermatitis, one was evaluated as slightly improved and one as unchanged. Exacin ointment was considered to be effective for erosive dermatitis to prevent infection. (N.K.)

  17. Electron irradiation effects in YBa2Cu3O/sub 7-δ/ single crystals

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1988-04-01

    Defect structures in YBa 2 Cu 3 O/sub 7/minus/δ/ produced by electron irradiation at 300/degree/K, were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to b 152 keV and 131 keV (+- 7 keV) in directions near the a- and b-axes, respectively (b > a, both perpendicular to c, the long axis in the orthorhombic structure). During above-threshold irradiations in an electron flux of 3 x 10 18 cm/sup /minus/2/s/sup /minus/1/, extended defects were observed to form and grow to sizes of 10--50 nm over 15 minutes, in material thicknesses varying between 20 and 200 nm. Upon irradiation between the a- and b-thresholds, movement of twin plane boundaries and shrinkage of twinned volume were observed. All these findings suggest oxygen atom displacements in the basal plane with recoil energies near 20 eV. Above-threshold irradiations also show the collapse of c-axis long-range order into a planar faulted defect structure with short range order peaks at 1.2 c and 1.07 c, depending on the irradiation direction. 9 refs., 4 figs

  18. Fabrication of Octahedral Gold Nanoparticle embedded Polymer Pattern based on Electron Irradiation and Thermal Treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Nam; Lee, Hyeok Moo; Cho, Sung Oh [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2011-05-15

    Noble metal nanoparticles (NPs) such as gold (Au), silver, and copper have been a hot research issue due to their unique optical, electronic, and catalytic properties. On account of the size- and shape- dependent properties of the noble metal NPs, most researches are concentrated on tailoring sizes and shapes of the noble metal NPs. In particular, noble metal NPs with Platonic shapes such as tetrahedron, cube, octahedron, dodecahedron, and icosahedron have significant impact on a variety of applications including surface-enhancement spectroscopy, biochemical sensing, and nanodevice fabrication because sharp corners of the metals lead to high local electric-field enhancement. In addition, patterning or controlled assembly of noble metal NPs is indispensible for biological sensors, micro-/nano-electronic devices, photonic and photovoltaic devices, and surface-enhanced Raman scattering (SERS)-active substrates. Although Platonic noble metal NPs with well defined sizes have been intensively studied, patterning of Platonic noble metal NPs has been rarely demonstrated. Here, we present a strategy to fabricate patterned Au nano-octahedra embedded polymer films by selectively irradiating an electron beam onto HAuCl{sub 4}-loadaed poly(styrene-b-2-vinyl pyridine) (PS-b-P2VP) block copolymer (BCP) precursor films followed by thermal treatment. The BCP plays a important role for the patterning of the precursor film due to a cross-linking behavior under electron irradiation

  19. Effect of low energy electron irradiation on DNA damage by Cu{sup 2+} ion

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Hyung Ah; Cho, Hyuck [Dept. of Physics, Chungnam National University, Daejeon (Korea, Republic of); Park, Yeun Soo [Plasma Technology Research Center, National Fusion Research Institute, Gunsan (Korea, Republic of)

    2017-03-15

    The combined effect of the low energy electron (LEE) irradiation and Cu{sup 2+} ion on DNA damage was investigated. Lyophilized pBR322 plasmid DNA films with various concentrations (1–15 mM) of Cu{sup 2+} ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

  20. Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

    International Nuclear Information System (INIS)

    Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

    2013-01-01

    This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

  1. The localization and diffusion of positive muons in electron irradiated niobium and tantalum

    International Nuclear Information System (INIS)

    Doering, K.P.

    1987-01-01

    For monocrystals of Ta and very pure Nb the transversal spin-depolarization (or relaxation) of positive muons is measured. It is found that for both metals by irradiation with 3 MeV electrons two further sorts of defects are created which capture the muons. For the quantitative analysis a model is developed. (orig./BHO)

  2. Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Šagátová, Andrea, E-mail: andrea.sagatova@stuba.sk [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia); Zaťko, Bohumír; Dubecký, František [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ly Anh, Tu [Faculty of Applied Science, University of Technology VNU HCM, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Nečas, Vladimír; Sedlačková, Katarína; Pavlovič, Márius [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Fülöp, Marko [University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia)

    2017-02-15

    Highlights: • Radiation hardness of SI GaAs detectors against gamma-rays, neutrons and electrons was compared. • Good agreement was achieved between the experimental results and displacement damage factor of different types of radiation. • CCE and FWHM first slightly improved (by 1–8%) and just then degraded with the cumulative dose. • An increase of detection efficiency with cumulative dose was observed. - Abstract: Radiation hardness of semi-insulating GaAs detectors against {sup 60}Co gamma-rays, fast neutrons and 5 MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10 Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1 kGy of electrons (FWHM decreased by 3% on average) and at 10 kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140 kGy of ∼1 MeV photons, 104 kGy of 5 MeV electrons but only up to 0.576 kGy of fast (∼2 to 30 MeV) neutrons.

  3. Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn; Diao, Dongfeng, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-08-01

    We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.

  4. The effect of electron irradiation on the structure and iron speciation in sodium aluminum (iron) phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Stefanovsky, S.V., E-mail: serge.stefanovsky@yandex.ru [Frumkin Institute of Physical Chemistry and Electrochemistry RAS (Russian Federation); Presniakov, I.A.; Sobolev, A.V.; Glazkova, I.S. [Lomonosov Moscow State University, Department of Chemistry (Russian Federation); Kadyko, M.I.; Stefanovsky, O.I. [Frumkin Institute of Physical Chemistry and Electrochemistry RAS (Russian Federation)

    2016-08-01

    The effect of 8 MeV electron irradiation on the structure of glasses in the series 40 Na{sub 2}O, (20-x) Al{sub 2}O{sub 3}, x Fe{sub 2}O{sub 3}, 40 P{sub 2}O{sub 5} (mol.%) and on the iron speciation in these samples was studied by FTIR and Mössbauer spectroscopic techniques. Irradiation up to a dose of 1.0 MGy has no appreciable effects on the character of the bonds within anionic motif of the glass network. Electron irradiation increases the fraction of aluminum in octahedral coordination. Iron in both unirradiated and irradiated glasses is present mainly as Fe(III) (60–75% of the total amount) in the glasses and partly as Fe(II) and the ratio of two forms remains constant up to a dose of 1.0 MGy.

  5. Observation of magnetically anisotropic defects during stage I recovery in nickel after low-temperature electron irradiation

    International Nuclear Information System (INIS)

    Forsch, K.; Hemmerich, J.; Knoll, H.; Lucki, G.

    1974-01-01

    The measurement of defect-induced changes of magnetic anisotropy in a nickel single crystal after low-temperature electron irradiation was undertaken. A dynamic measuring method was used after reorienting a certain fraction of the radiation-induced defects in an external magnetic field of 5 kOe. In the temperature range of recovery stage I sub(C,D,E) (45 to 60 k) the crystallographic direction dependence of defect-induced anisotropy could be determined. The results show that in this temperature range the (100) split interstitial is mobile and able to reorient. The obtained data are further discussed with respect to existing information on magnetic after effect and resistivity annealing in electron-irradiated nickel

  6. Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

    International Nuclear Information System (INIS)

    Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

    2013-01-01

    A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

  7. Thermoluminescence responses of photon- and electron-irradiated lithium potassium borate co-doped with Cu+Mg or Ti+Mg

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ramli, A.T.; Saleh, M.A.; Saripan, M.I.; Alzimami, K.; Min Ung, Ngie

    2013-01-01

    New glasses Li 2 CO 3 –K 2 CO 3 –H 3 BO 3 (LKB) co-doped with CuO and MgO, or with TiO 2 and MgO, were synthesized by the chemical quenching technique. The thermoluminescence (TL) responses of LKB:Cu,Mg and LKB:Ti,Mg irradiated with 6 MV photons or 6 MeV electrons were compared in the dose range 0.5–4.0 Gy. The standard commercial dosimeter LiF:Mg,Ti (TLD-100) was used to calibrate the TL reader and as a reference in comparison of the TL properties of the new materials. The dependence of the responses of the new materials on 60 Co dose is linear in the range of 1–1000 Gy. The TL yields of both of the co-doped glasses and TLD-100 are greater for electron irradiation than for photon irradiation. The TL sensitivity of LKB:Ti,Mg is 1.3 times higher than the sensitivity of LKB:Cu,Mg and 12 times less than the sensitivity of TLD-100. The new TL dosimetric materials have low effective atomic numbers, good linearity of the dose responses, excellent signal reproducibility, and a simple glow curve structure. This combination of properties makes them suitable for radiation dosimetry. - Highlights: • Enhancement of about three times has been shown with the increment of MgO. • A comparison was carried out between the TL responses of the prepared dosimeters and TLD-100. • The prepared dosimeters show simple glow curve, low Z material and excellent reproducibility. • The TL measurements show a linear dose response in a long span of exposures. • The electron response shows 1.18 times greater than photon response for the prepared dosimeters

  8. Effect of additional minor elements on accumulation behavior of point defects under electron irradiation in austenitic stainless steels

    International Nuclear Information System (INIS)

    Sekio, Yoshihiro; Yamashita, Shinichiro; Takahashi, Heishichiro; Sakaguchi, Norihito

    2014-01-01

    Addition of minor elements to a base alloy is often applied with the aim of mitigating void swelling by decreasing the vacancy diffusivity and flux which influence vacancy accumulation behavior. However, the comparative evaluations of parameters, such as the diffusivity and flux, between a base alloy and modified alloys with specific additives have not been studied in detail. In this study, type 316 austenitic stainless steel as a base alloy and type 316 austenitic stainless steels modified with vanadium (V) or zirconium (Zr) additions were used to perform evaluations from the changes of widths of the void denuded zone (VDZ) formed near a random grain boundary during electron irradiation because these widths depend on vacancy diffusivity and flux. The formations of VDZs were observed in in-situ observations during electron irradiation at 723 K and the formed VDZ widths were measured from the transmission electron microscopic images after electron irradiation. As a result, the VDZs were formed in both steels without and with V, and respective widths were ∼119 and ∼100 nm. On the other hand, the VDZ formation was not observed clearly in the steel with Zr. From the measured VDZ widths in the steels without and with V addition, the estimated ratio of the vacancy diffusivity in the steel with V to that in the steel without V was about 0.50 and the estimated ratio of the vacancy flux in the steel with V to that in the steel without V was about 0.71. This result suggests that the effect of additional minor elements on vacancy accumulation behaviors under electron irradiation could be estimated from evaluations of the VDZ width changes among steels with and without minor elements. Especially, because void swelling is closely related with the vacancy diffusion process, the VDZ width changes would also be reflected on void swelling behavior. (author)

  9. Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

    Science.gov (United States)

    Inoue, Naohisa; Kawamura, Yuichi

    2018-05-01

    The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

  10. Production of Sulfur Allotropes in Electron Irradiated Jupiter Trojans Ice Analogs

    Science.gov (United States)

    Mahjoub, Ahmed; Poston, Michael J.; Blacksberg, Jordana; Eiler, John M.; Brown, Michael E.; Ehlmann, Bethany L.; Hodyss, Robert; Hand, Kevin P.; Carlson, Robert; Choukroun, Mathieu

    2017-09-01

    In this paper, we investigate sulfur chemistry in laboratory analogs of Jupiter Trojans and Kuiper Belt Objects (KBOs). Electron irradiation experiments of CH3OH-NH3-H2O and H2S-CH3OH-NH3-H2O ices were conducted to better understand the chemical differences between primordial planetesimals inside and outside the sublimation line of H2S. The main goal of this work is to test the chemical plausibility of the hypothesis correlating the color bimodality in Jupiter Trojans with sulfur chemistry in the incipient solar system. Temperature programmed desorption (TPD) of the irradiated mixtures allows the detection of small sulfur allotropes (S3 and S4) after the irradiation of H2S containing ice mixtures. These small, red polymers are metastable and could polymerize further under thermal processing and irradiation, producing larger sulfur polymers (mainly S8) that are spectroscopically neutral at wavelengths above 500 nm. This transformation may affect the spectral reflectance of Jupiter Trojans in a different way compared to KBOs, thereby providing a useful framework for possibly differentiating and determining the formation and history of small bodies. Along with allotropes, we report the production of organo-sulfur molecules. Sulfur molecules produced in our experiment have been recently detected by Rosetta in the coma of 67P/Churyumov-Gerasimenko. The very weak absorption of sulfur polymers in the infrared range hampers their identification on Trojans and KBOs, but these allotropes strongly absorb light at UV and Visible wavelengths. This suggests that high signal-to-noise ratio UV-Vis spectra of these objects could provide new constraints on their presence.

  11. ELECTRON IRRADIATION AND THERMAL PROCESSING OF MIXED-ICES OF POTENTIAL RELEVANCE TO JUPITER TROJAN ASTEROIDS

    International Nuclear Information System (INIS)

    Mahjoub, Ahmed; Poston, Michael J.; Hand, Kevin P.; Hodyss, Robert; Blacksberg, Jordana; Carlson, Robert W.; Ehlmann, Bethany L.; Choukroun, Mathieu; Brown, Michael E.; Eiler, John M.

    2016-01-01

    In this work we explore the chemistry that occurs during the irradiation of ice mixtures on planetary surfaces, with the goal of linking the presence of specific chemical compounds to their formation locations in the solar system and subsequent processing by later migration inward. We focus on the outer solar system and the chemical differences for ice mixtures inside and outside the stability line for H 2 S. We perform a set of experiments to explore the hypothesis advanced by Wong and Brown that links the color bimodality in Jupiter's Trojans to the presence of H 2 S in the surface of their precursors. Non-thermal (10 keV electron irradiation) and thermally driven chemistry of CH 3 OH–NH 3 –H 2 O (“without H 2 S”) and H 2 S–CH 3 OH–NH 3 –H 2 O (“with H 2 S”) ices were examined. Mid-IR analyses of ice and mass spectrometry monitoring of the volatiles released during heating show a rich chemistry in both of the ice mixtures. The “with H 2 S” mixture experiment shows a rapid consumption of H 2 S molecules and production of OCS molecules after a few hours of irradiation. The heating of the irradiated “with H 2 S” mixture to temperatures above 120 K leads to the appearance of new infrared bands that we provisionally assign to SO 2 and CS. We show that radiolysis products are stable under the temperature and irradiation conditions of Jupiter Trojan asteroids. This makes them suitable target molecules for potential future missions as well as telescope observations with a high signal-to-noise ratio. We also suggest the consideration of sulfur chemistry in the theoretical modeling aimed at understanding the chemical composition of Trojans and KOBs

  12. Production of Sulfur Allotropes in Electron Irradiated Jupiter Trojans Ice Analogs

    Energy Technology Data Exchange (ETDEWEB)

    Mahjoub, Ahmed; Poston, Michael J.; Blacksberg, Jordana; Ehlmann, Bethany L.; Hodyss, Robert; Hand, Kevin P.; Carlson, Robert; Choukroun, Mathieu [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Eiler, John M.; Brown, Michael E., E-mail: Mahjoub.Ahmed@jpl.nasa.gov [California Institute of Technology, Division of Geological and Planetary Sciences, Pasadena, CA 91125 (United States)

    2017-09-10

    In this paper, we investigate sulfur chemistry in laboratory analogs of Jupiter Trojans and Kuiper Belt Objects (KBOs). Electron irradiation experiments of CH{sub 3}OH–NH{sub 3}–H{sub 2}O and H{sub 2}S–CH{sub 3}OH–NH{sub 3}–H{sub 2}O ices were conducted to better understand the chemical differences between primordial planetesimals inside and outside the sublimation line of H{sub 2}S. The main goal of this work is to test the chemical plausibility of the hypothesis correlating the color bimodality in Jupiter Trojans with sulfur chemistry in the incipient solar system. Temperature programmed desorption (TPD) of the irradiated mixtures allows the detection of small sulfur allotropes (S{sub 3} and S{sub 4}) after the irradiation of H{sub 2}S containing ice mixtures. These small, red polymers are metastable and could polymerize further under thermal processing and irradiation, producing larger sulfur polymers (mainly S{sub 8}) that are spectroscopically neutral at wavelengths above 500 nm. This transformation may affect the spectral reflectance of Jupiter Trojans in a different way compared to KBOs, thereby providing a useful framework for possibly differentiating and determining the formation and history of small bodies. Along with allotropes, we report the production of organo-sulfur molecules. Sulfur molecules produced in our experiment have been recently detected by Rosetta in the coma of 67P/Churyumov–Gerasimenko. The very weak absorption of sulfur polymers in the infrared range hampers their identification on Trojans and KBOs, but these allotropes strongly absorb light at UV and Visible wavelengths. This suggests that high signal-to-noise ratio UV–Vis spectra of these objects could provide new constraints on their presence.

  13. Low-energy electron irradiation assisted diffusion of gold nanoparticles in polymer matrix

    International Nuclear Information System (INIS)

    Deore, Avinash V.; Bhoraskar, V.N.; Dhole, S.D.

    2014-01-01

    A simple and controllable method to synthesize nanoparticles in the surface region of polymers was used by low energy electron irradiation. Using this method, gold nanoparticles have been synthesized by irradiating gold coated PVA (Polyvinyl Alcohol) sheets. This method was easy in operation and even period of few minutes was sufficient to obtain the nanoparticles. The coatings (∼10 μm) made from a mixture of ethanol and HAuCl 4 on PVA sheets (∼150 μm) by simple drop cast method were irradiated with 30 keV electrons, at room temperature and 10 −6 mbar vacuum level. The electron fluence was varied from coating to coating in the range of 0 to 24×10 15 e/cm 2 . The irradiated samples were characterized by the UV–Vis, XRD, SEM and RBS techniques. The plasmon absorption peak at ∼539 nm in UV–Vis spectra was an evidence for the initiation of the growth of gold nanoparticles. The X-ray diffraction results and the blue shift in the plasmon absorption peak reveal that the size of nanoparticles could be tailored in the range from 58 to 40 nm by varying the electron fluence. The diffusion of gold in the PVA was confirmed by the Rutherford backscattering spectroscopy and scanning electron microscopy techniques. This method of synthesis of metal nanoparticles by low energy electron beam irradiation has the key importance in the development of new fabrication techniques for nanomaterials. - Highlights: • The results indicate that low energy electrons can effectively be used for the synthesis of nanoparticles of different sizes. • This study leads to a definite conclusion that gold nanoparticles have been synthesized in surface region of the PVA sheet. • The size of nanoparticles decreases with increasing electron fluence. • The depth of diffusion of Au atoms at maximum fluence was found to be ∼1.5 μm

  14. Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2011-08-31

    The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

  15. Effect of electron irradiation and bayberry polyphenols on the quality change of yellowfin tuna fillets during refrigerated storage

    International Nuclear Information System (INIS)

    Bu, Tingting; Jin, Yang; Li, Xiaohui; Zhang, Jinjie; Xu, Dalun; Yang, Wenge; Lou, Qiaoming

    2017-01-01

    This study evaluated the synergistic effect of bayberry polyphenols and electron irradiation in controlling the chemical, microbiological and sensory changes of raw yellowfin tuna fillets at 4 °C for 7 days. The results indicated that the initial values of each index were dose-dependent. The dose of 5 kGy notably accelerated adenosine triphosphate degradation and lipid oxidation, while the doses of 1 and 3 kGy had acceptable sensory quality and yielded a shelf-life of 5 days. The addition of bayberry polyphenols had evident effect in inhibiting freshness breakdown, bacteria growth, histamine formation, and discoloration of tuna fillets. Bayberry polyphenols, as an antioxidant, could inhibit lipid oxidation and sensory side-effects made by irradiation up to 3 kGy. The dose of 1–3 kGy coupled with bayberry polyphenols was optimum to preserve tuna fillets which prolonged the shelf-life to 7 days. - Highlights: • Electron irradiation inhibited bacteria growth and histamine formation. • Electron irradiation increased the red color of tuna fillets. • 5 kGy irradiation decreased the sensory quality of raw tuna fillets. • Bayberry polyphenols combined with irradiation could retard the quality change. • Bayberry polyphenols could be used as natural antioxidant and color fixative.

  16. Magnetic quadrupole resonance of electron irradiated aluminium. Electric field gradients surrounding the vacancies and interstitials

    International Nuclear Information System (INIS)

    Andreani, R.; Minier, M.; Minier, C.

    Some aluminium samples were irradiated at 20K with 3MeV electrons. The quadrupole absorption spectra have been obtained after irradiation and annealing, at 50K, 150K and 300K. Coupled conductivity measurements allowed the evolution in defect concentration to be studied. This new method makes it possible to characterize the presence of vacancies independently of the simultaneous existence of bivacancies, interstitials and clusters [fr

  17. Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Providence High School, Charlotte, NC 28270 (United States); Su, L.Q.; Kon, J. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Gfroerer, T. [Davidson College, Davidson, NC 28035 (United States); Wanlass, M.W. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Zhang, Y., E-mail: yong.zhang@uncc.edu [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States)

    2017-05-15

    Photoluminescence (PL) imaging has been shown to be an efficient technique for investigating carrier diffusion in semiconductors. In the past, the measurement was typically carried out by measuring at one wavelength (e.g., at the band gap) or simply the whole emission band. At room temperature in a semiconductor like GaAs, the band-to-band PL emission may occur in a spectral range over 200 meV, vastly exceeding the average thermal energy of about 26 meV. To investigate the potential dependence of the carrier diffusion on the carrier kinetic energy, we performed wavelength selective PL imaging on a GaAs double hetero-structure in a spectral range from about 70 meV above to 50 meV below the bandgap, extracting the carrier diffusion lengths at different PL wavelengths by fitting the imaging data to a theoretical model. The results clearly show that the locally generated carriers of different kinetic energies mostly diffuse together, maintaining the same thermal distribution throughout the diffusion process. Potential effects related to carrier density, self-absorption, lateral wave-guiding, and local heating are also discussed.

  18. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  19. Structural and volume changes and their correlation in electron irradiated alkali silicate glasses

    International Nuclear Information System (INIS)

    Gavenda, Tadeáš; Gedeon, Ondrej; Jurek, Karel

    2017-01-01

    Highlights: • Volume changes were correlated with both incubation dose and Raman spectra. • Irradiation decreases Si-O-Si angle and increases the amount of three-membered rings. • Levelling of the pits depends on the dose below and above incubation dose. • Restoration of the original structure was limited to low-frequency region. - Abstract: Two binary alkali silicate glasses (15K 2 O·85SiO 2 – denoted as K15 and 15Li 2 O·85SiO 2 – denoted as Li15) were irradiated by 50 keV electron beams with doses within the range of 2.1–15.9 kC/m 2 . Volume changes induced by electron irradiation were monitored by means of Atomic Force Microscopy (AFM). Raman spectra were taken from the irradiated spots to observe structural changes. Volume compaction observed at lower doses was correlated with the increase of the D2 peak. Volume expansion at higher doses was related to migration of alkali ions. Irradiated glasses were annealed at 400 °C and 500 °C for 60 min. After annealing irradiated spots were again examined by AFM and Raman spectroscopy in order to determine volume and structural relaxation of radiation induced changes. Annealing at higher temperatures resulted in the levelling of the pits created by irradiation, but only for doses below incubation dose. The pits created by doses above incubation dose were not levelled. Annealing caused decrease of D2 peak and shift of the Si-O-Si vibrations band in direction to original structure. Low-frequency region of annealed Li15 glass was undistinguishable from that of pristine glass, while annealing of K15 glass did not result in the full reversion to the original shape. The differences between glasses were attributed to higher T g of K15 glass. Q-motives bands of both glasses were not completely restored after annealing due to the absence of alkali ions.

  20. ELECTRON IRRADIATION AND THERMAL PROCESSING OF MIXED-ICES OF POTENTIAL RELEVANCE TO JUPITER TROJAN ASTEROIDS

    Energy Technology Data Exchange (ETDEWEB)

    Mahjoub, Ahmed; Poston, Michael J.; Hand, Kevin P.; Hodyss, Robert; Blacksberg, Jordana; Carlson, Robert W.; Ehlmann, Bethany L.; Choukroun, Mathieu [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Brown, Michael E.; Eiler, John M., E-mail: Mahjoub.Ahmed@jpl.nasa.gov [California Institute of Technology, Division of Geological and Planetary Sciences, Pasadena, CA 91125 (United States)

    2016-04-01

    In this work we explore the chemistry that occurs during the irradiation of ice mixtures on planetary surfaces, with the goal of linking the presence of specific chemical compounds to their formation locations in the solar system and subsequent processing by later migration inward. We focus on the outer solar system and the chemical differences for ice mixtures inside and outside the stability line for H{sub 2}S. We perform a set of experiments to explore the hypothesis advanced by Wong and Brown that links the color bimodality in Jupiter's Trojans to the presence of H{sub 2}S in the surface of their precursors. Non-thermal (10 keV electron irradiation) and thermally driven chemistry of CH{sub 3}OH–NH{sub 3}–H{sub 2}O (“without H{sub 2}S”) and H{sub 2}S–CH{sub 3}OH–NH{sub 3}–H{sub 2}O (“with H{sub 2}S”) ices were examined. Mid-IR analyses of ice and mass spectrometry monitoring of the volatiles released during heating show a rich chemistry in both of the ice mixtures. The “with H{sub 2}S” mixture experiment shows a rapid consumption of H{sub 2}S molecules and production of OCS molecules after a few hours of irradiation. The heating of the irradiated “with H{sub 2}S” mixture to temperatures above 120 K leads to the appearance of new infrared bands that we provisionally assign to SO{sub 2}and CS. We show that radiolysis products are stable under the temperature and irradiation conditions of Jupiter Trojan asteroids. This makes them suitable target molecules for potential future missions as well as telescope observations with a high signal-to-noise ratio. We also suggest the consideration of sulfur chemistry in the theoretical modeling aimed at understanding the chemical composition of Trojans and KOBs.

  1. Structural and volume changes and their correlation in electron irradiated alkali silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Gavenda, Tadeáš, E-mail: gavendat@vscht.cz [Department of Glass and Ceramics, University of Chemical Technology, Technicka 5, CZ-166 28 Prague (Czech Republic); Gedeon, Ondrej [Department of Glass and Ceramics, University of Chemical Technology, Technicka 5, CZ-166 28 Prague (Czech Republic); Jurek, Karel [Institute of Physics, Academy of the Czech Republic, Na Slovance 2, CZ-182 21 Prague (Czech Republic)

    2017-04-15

    Highlights: • Volume changes were correlated with both incubation dose and Raman spectra. • Irradiation decreases Si-O-Si angle and increases the amount of three-membered rings. • Levelling of the pits depends on the dose below and above incubation dose. • Restoration of the original structure was limited to low-frequency region. - Abstract: Two binary alkali silicate glasses (15K{sub 2}O·85SiO{sub 2} – denoted as K15 and 15Li{sub 2}O·85SiO{sub 2} – denoted as Li15) were irradiated by 50 keV electron beams with doses within the range of 2.1–15.9 kC/m{sup 2}. Volume changes induced by electron irradiation were monitored by means of Atomic Force Microscopy (AFM). Raman spectra were taken from the irradiated spots to observe structural changes. Volume compaction observed at lower doses was correlated with the increase of the D2 peak. Volume expansion at higher doses was related to migration of alkali ions. Irradiated glasses were annealed at 400 °C and 500 °C for 60 min. After annealing irradiated spots were again examined by AFM and Raman spectroscopy in order to determine volume and structural relaxation of radiation induced changes. Annealing at higher temperatures resulted in the levelling of the pits created by irradiation, but only for doses below incubation dose. The pits created by doses above incubation dose were not levelled. Annealing caused decrease of D2 peak and shift of the Si-O-Si vibrations band in direction to original structure. Low-frequency region of annealed Li15 glass was undistinguishable from that of pristine glass, while annealing of K15 glass did not result in the full reversion to the original shape. The differences between glasses were attributed to higher T{sub g} of K15 glass. Q-motives bands of both glasses were not completely restored after annealing due to the absence of alkali ions.

  2. Adsorption and photocatalytic activity of electron-irradiated polystyrene nanosphere multi-layer film

    International Nuclear Information System (INIS)

    Cho, Sung Oh; Yoo, Seung Hwa; Kim, Jea Joon; Kum, Jong Min

    2012-01-01

    production from water, after the first report of poly(p-phenylene) (PPP) in 1990. Both of these work shows enhanced activity by incorporating a co-catalyst. However, to date, there is no reported literature about single material organic photocatalyst for removal of organic pollutant from water. In this paper, we present a novel low-cost, metal-free organic photocatalyst that consists of only carbon and hydrogen fabricated by electron-beam irradiation on polymer nanospheres. Characterization results and adsorption-photocatalytic activities are shown of electron-irradiated polystyrene (PS) nanospheres

  3. Dislocation sweeping of defects in neutron- and electron-irradiated niobium

    International Nuclear Information System (INIS)

    Loomis, B.A.; Otero, M.P.

    1983-10-01

    The glide of dislocations in a [441]-oriented Nb single crystal irradiated at 325 K with 5.5 x 10 21 neutrons/m 2 (E > 0.1 MeV) is shown for increasing time of tensile elongation (2 x 10 -4 mm/s) in the High Voltage Electron Microscope at Argonne National Laboratory. The dimensions of the tensile specimen in the guage length were approximately 2 mm x 0.5 mm x 0.0001 mm. An electron energy of 900 keV was used during the simultaneous deformation and TEM observation

  4. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  5. Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

    International Nuclear Information System (INIS)

    Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

    1991-01-01

    Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

  6. Calibration of dosimeters at 80-120 keV electron irradiation

    DEFF Research Database (Denmark)

    Miller, A.; Helt-Hansen, J.

    to calibrate thin-film dosimeters (Risø B3 and alanine films) by irradiation at the 80–120 keV electron accelerators. This calibration was compared to a 10MeV calibration, and we show that the radiation response of the dosimeter materials (the radiation chemical yield) is constant at these irradiation energies....... However, dose gradients within the dosimeters, when it is irradiated at low electron energies,mean that calibration function here will depend on both irradiation energy and the required effective point of measurement of the dosimeter. These are general effects that apply to any dosimeter that has a non...

  7. Effect of electron irradiation on defect distribution in solar cells for space applications

    International Nuclear Information System (INIS)

    Charles, J.P.; Bruguier, G.; Mialhe, P.; Ruas, R.

    1989-01-01

    The distribution of the recombination centers in the spacecharge region was highly dissymetrical before irradiation. After irradiation by a high density electron beam of 10 15 cm -2 with an energy of 1 MeV, the recombination process predominates in the whole bias range. The irradiation yields both an increase in density of the recombination centers and a more homogeneous distribution of traps in the space charge region with an improvement in the behaviour of cells (via the fill factor). This effect is counterbalanced by poor operation in the base and the emitter with a decrease in the efficiency of the device by 20% [fr

  8. Effects of electron irradiation on the resistive behaviour of YBCO-type ceramics

    International Nuclear Information System (INIS)

    Galatanu, A.; Novac, A.; Mosteanu, T.; Magureanu, M.

    1998-01-01

    YBCO-123 ceramic samples were irradiated with electron beams (E=0.5 MeV), the particle fluxes ranging between 10 15 and 10 19 e - /cm 2 . The induced structure modifications are analyzed through X-ray diffraction and their effects on the resistive behaviour are estimated. It is shown that a direct correlation can be established between the irradiation effects, oxygen disorder and hence the modification of the sample resistivity. A particular attention is given to the effects on the fluctuation mechanism arising near the transition temperature. (authors)

  9. Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

    International Nuclear Information System (INIS)

    Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

    2009-01-01

    Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

    International Nuclear Information System (INIS)

    Kumar, Sanjiv; Raju, V.S.

    2004-01-01

    This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14 N(α,α) 14 N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28 Si(p,p) 28 Si and 14 N(p,p) 14 N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1 H( 19 F,αγ) 16 O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si 1-(x+y) N x H y films

  11. Computation of transverse muon-spin relaxation functions including trapping-detrapping reactions, with application to electron-irradiated tantalum

    International Nuclear Information System (INIS)

    Doering, K.P.; Aurenz, T.; Herlach, D.; Schaefer, H.E.; Arnold, K.P.; Jacobs, W.; Orth, H.; Haas, N.; Seeger, A.; Max-Planck-Institut fuer Metallforschung, Stuttgart

    1986-01-01

    A new technique for the economical evaluation of transverse muon spin relaxation functions in situations involving μ + trapping at and detrapping from crystal defects is applied to electron-irradiated Ta exhibiting relaxation maxima at about 35 K, 100 K, and 250 K. The long-range μ + diffusion is shown to be limted by traps over the entire temperature range investigated. The (static) relaxation rates for several possible configurations of trapped muons are discussed, including the effect of the simultaneous presence of a proton in a vacancy. (orig.)

  12. New design of the pulsed electro-acoustic upper electrode for space charge measurements during electronic irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Riffaud, J.; Griseri, V.; Berquez, L. [UPS, LAPLACE, Université de Toulouse, 118 Route de Narbonne, Toulouse F-31062, France and CNRS, LAPLACE, Toulouse F-31062 (France)

    2016-07-15

    The behaviour of space charges injected in irradiated dielectrics has been studied for many years for space industry applications. In our case, the pulsed electro-acoustic method is chosen in order to determine the spatial distribution of injected electrons. The feasibility of a ring-shaped electrode which will allow the measurements during irradiation is presented. In this paper, a computer simulation is made in order to determine the parameters to design the electrode and find its position above the sample. The obtained experimental results on polyethylene naphthalate samples realized during electronic irradiation and through relaxation under vacuum will be presented and discussed.

  13. Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.

    1983-01-01

    After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

  14. SU-F-T-82: Dosimetric Evaluation of a Shield Used for Hemi-Body Skin Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Rivers, C; Singh, A [Roswell Park Cancer Institute, Buffalo, NY (United States); AlDahlawi, I; Wang, I; Podgorsak, M [Roswell Park Cancer Institute, Buffalo, NY (United States); State University of New York at Buffalo, Buffalo, NY (United States)

    2016-06-15

    Purpose: We had several mycosis fungoides patients with a limited disease to about half of the skin surface. A custom-made plywood shield was used to protect the non-targeted skin region with our total skin electron irradiation (TSEI) technique. We report a dosimetric evaluation for our “hemi-body” skin electron irradiation technique. Methods: The technique is similar to our clinical total skin electron irradiation (TSEI), performed with a six-pair dual field (Stanford technique) at an extended source-to-skin distance (SSD) of 377 cm, with the addition of a plywood shield placed 50 cm from the patient. The shield is made of three layers of standard 5/8″ thick plywood (total thickness of 4.75 cm) that are clamped securely on an adjustable-height stand. Gafchromic EBT3 films were used in assessing the shield’s transmission factor and the extend of the dose penumbra region. To verify the dose delivered for hemi-body skin radiation in a real patient treatment, in-vivo dosimetry using Gafchromic EBT3 films were performed. Film pieces were taped on the patient skin to measure the dose received during the first two fractions, placed on the forehead and upper body (shielded region); and also at the level of pelvic area, left thigh, and left ankle. Results: The shield transmission factor was found to be 10%, and the width of the penumbra (80-to-20% dose fall-off) was about 12 cm. In-vivo dosimetry of a real case confirmed the expected shielded area dose. Conclusion: Hemi-Body skin electron irradiation at an extended SSD is feasible with the addition of a plywood shield at a distance from patient skin. The penumbra dose region and the shield’s transmission factor should be evaluated prior to clinical use. We have treated several hemi-body skin patients with our custom-made plywood shield, the current patient measurements are representative of these for other patients as well.

  15. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  16. Doping assessment in GaAs nanowires

    DEFF Research Database (Denmark)

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  17. GaAs optoelectronic neuron arrays

    Science.gov (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  18. On possibility of high energy electron irradiation usage for material alloying

    International Nuclear Information System (INIS)

    Vladimirskij, R.A.; Livshits, V.B.; Payuk, V.A.; Plotnikov, S.V.; Kuz'minykh, V.A.

    1988-01-01

    Review of papers concerning over 2.5 MeV fast electron beam (FEB) irradiation of metals and semiconductors is made. It makes possible to transform physical and mechanical properties ofsurface layers due to their alloyage with different elements or due to redistribution of alloy impurities at the essential depth. It is shown, that electron beam irradiation of materials results in the formation of essential temperature gradient in the sample near the surface and defect nonequilibrium concentration. Along with the increase of diffusion effective ratio the heterogeneous distribution of temperature and defects results in the formation of atom nucompensated fluxes within the sample, which result in element redistribution. Drift of one element through the layer of the second one occurs as a result. Gradient of temperature and defects, amfient temperature and correlation of migration activation energies of element atoms are considered as determining factors at anomalous mass transfer

  19. Huang scattering from self-interstitials in electron-irradiated Fe-40 at % Al ordered alloy

    International Nuclear Information System (INIS)

    Guillot, J.P.; Riviere, J.P.; Beaufort-Richard, M.F.

    1983-01-01

    A single crystal of Fe-40 at % Al ordered alloy has been irradiated with 2.5 MeV electrons at liquid hydrogen temperature, and diffuse X-ray scattering (MoKα 1 ) near Bragg reflections has been studied after annealing the sample up to 300 K. The characteristic diffuse scattering from point defects with weak displacement fields (Huang diffusion) has been observed near the (200) Bragg reflection in the directions [011] and [100] and near the (110) reflection in the directions [110] and [110]. This Huang scattering has been attributed to self interstitials since under the same irradiations conditions, electrical resistivity measurements indicate that the long range migration of self interstitials by annihilation at vacancies would occur only for temperatures higher than 300 K. The comparison of the experimental results with the different simple intertitial configurations proposed for b.c.c. crystals suggest that the most probable configuration should be the [110] split interstitial with orthorhombic symmetry [fr

  20. Electron irradiation response on Ge and Al-doped SiO{sub 2} optical fibres

    Energy Technology Data Exchange (ETDEWEB)

    Yaakob, N.H.; Wagiran, H. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Hossain, I., E-mail: imamhossain@utm.m [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ramli, A.T. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Bradley, D.A [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Hashim, S. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, Johor Darul Takzim (Malaysia)

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO{sub 2} optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO{sub 2} optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  1. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  2. Electron irradiation of near-UV GaN/InGaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, In-Hwan; Cho, Han-Su [Department of Materials Science and Engineering, Korea University, Seoul (Korea, Republic of); Polyakov, Alexander Y.; Smirnov, N.B.; Shchemerov, I.V.; Zinovyev, R.A.; Didenko, S.I.; Lagov, P.B. [National University of Science and Technology MISiS, Moscow (Russian Federation); Shmidt, N.M.; Shabunina, E.I. [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Tal' nishnih, N.A. [Submicron Heterostructures for Microelectronics Research and Engineering Center, St. Petersburg (Russian Federation); Hwang, Sung-Min [Soft-Epi, Inc., Opo-ro 240, Gwangju-si, Gyeonggi-do (Korea, Republic of); Pearton, S.J. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL (United States)

    2017-10-15

    Irradiation with 6 MeV electrons of near-UV (peak wavelength 385-390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E{sub c} -0.8 and E{sub c} -1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 x 10{sup 16} cm{sup -2}. The likely origin of the EL efficiency decrease is this increase in concentration of the E{sub c} -0.8 eV and E{sub c} -1 eV traps. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Stress relaxation in dilute Al-0.02 at.% Mn alloy under electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Ivanov, L.I.; Pletnev, M.N.; Reznitsky, M.E.

    1984-01-01

    Stress relaxation in cold-worked and annealed (573 K for 2 hours) specimens of the dilute alloy Al-0.02 at.% Mn has been studied experimentally over a range of initial stresses 5 to 80 MPa, both with and without irradiation by 2.1 MeV electrons. Thermoactivation analysis has revealed that relaxation proceeds in two stages with different activation parameters. The deformation rate in the first stage is controlled by diffusion of the impurity (Mn), and in the second stage by the self-diffusion of aluminum. A new method has been proposed for evaluating the internal stresses from experimental data. The effect of radiation-induced diffusion on the kinetics of relaxation is discussed. (author)

  4. Investigation of defects in electron-irradiated diamond of the type Ia by positron annihilation

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ositinskaya, T.D.; Mikhalenkov, V.S.; Chernyashevskij, A.V.; Shakhovtsov, V.I.; AN Ukrainskoj SSR, Kiev; AN Ukrainskoj SSR, Kiev

    1997-01-01

    To produce vacancy defects, type Ia diamond was irradiated with 3.5 MeV electrons at doses of 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , and 2 centre dot 10 18 e/cm -2 . After each dose, the specimen was investigated using positron annihilation (ACAR), optical spectroscopy in IR, visible regions, and EPR. From ACAR spectra, the S-parameters were found and positron trapping rates were determined. Their behaviour with increasing irradiation doses shows that, in type Ia diamond along with neutral vacancies V degree, deeper traps of positrons are formed, which are most likely vacancies in the negative charge state V - . Specific trapping rates of the V 0 and V - defects are found to be 1.3 centre dot 10 15 and 3.8 centre dot 10 15 s -1 , respectively; trapping cross sections for these defects are also estimated

  5. Dosimetric methods and results of measurement for total body electron irradiation

    International Nuclear Information System (INIS)

    Feng Ningyuan; Yu Geng; Yu Zihao

    1987-01-01

    A modified 'STANFORD TSEI TECHNIQUE' e.g. dual angled gantry, 6 turntable angles and 12 fields was developed on PHILIPS SL 75-20 linear accelerator to treat mycosis fungoides. A plastic scatter screen, 5 mm in thickness was used to reduce the primary electron energy to 4 MeV in order to control treatment depth (d 80 approx.= 1.2 cm) and skin dose up to 89%. The X-ray contamination was at an acceptable level of 2%. This measurement which involved multiple dosimetric methods, showed that the distance between the scattor screen and the patient, within 10-30 cm, had no influence on PDD and the dose distribution on the body surface was reasonably homogeneous, but strongly dependent on the anatomic positions. For those sites which were located in the electron beam shadows, boosting irradiation might be necessary. The preliminary clinical trials indicated that this technique is valid and feasible

  6. The defects produced by electron irradiation in tellurium-doped germanium

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Saito, Haruo

    1989-01-01

    The nature of the irradiation induced defects in a germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The E c -0.21 eV level produced by irradiation with 1.5 MeV electrons was studied using the DLTS technique. It was found that the defect associated with this level is a divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E c -0.20 eV level in samples doped with a group V impurity. The level introduced by a tellurium (group VI impurity)-vacancy pair is deeper. The E c -0.16 eV level was generated by annealing at 430 K. A tellurium-vacancies complex is proposed as the defect associated with this level. (author)

  7. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  8. Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.

    1987-01-01

    State-of-the-art n/p and p/n heteroface GaAs cells, processed by metal organic chemical vapor deposition, were irradiated by 1 MeV electrons and 37 MeV protons and their performance determined as a function of fluence. It was found that the p/n cells were more radiation resistant than the n/p cells. The increased loss in the n/p cells was attributed to increases in series resistance and losses in the p-region resulting from the irradiation. The greater loss in fill factor observed for the n/p cells introduces the possibility that the presently observed superiority of the p/n cells may not be an intrinsic property of this configuration in GaAs

  9. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  10. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  11. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  12. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  13. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  14. Reprint of: Effects of cold deformation, electron irradiation and extrusion on deuterium desorption behavior in Zr-1%Nb alloy

    Science.gov (United States)

    Morozov, O.; Mats, O.; Mats, V.; Zhurba, V.; Khaimovich, P.

    2018-01-01

    The present article introduces the data of analysis of ranges of ion-implanted deuterium desorption from Zr-1% Nb alloy. The samples studied underwent plastic deformation, low temperature extrusion and electron irradiation. Plastic rolling of the samples at temperature ∼300 K resulted in plastic deformation with the degree of ε = 3.9 and the formation of nanostructural state with the average grain size of d = 61 nm. The high degree of defectiveness is shown in thermodesorption spectrum as an additional area of the deuterium desorption in the temperature ranges 650-850 K. The further processing of the sample (that had undergone plastic deformation by plastic rolling) with electron irradiation resulted in the reduction of the average grain size (58 nm) and an increase in borders concentration. As a result the amount of deuterium desorpted increased in the temperature ranges 650-900 K. In case of Zr-1% Nb samples deformed by extrusion the extension of desorption area is observed towards the temperature reduction down to 420 K. The formation of the phase state of deuterium solid solution in zirconium was not observed. The structural state behavior is a control factor in the process of deuterium thermodesorption spectrum structure formation with a fixed implanted deuterium dose (hydrogen diagnostics). It appears as additional temperature ranges of deuterium desorption depending on the type, character and defect content.

  15. Single-layer 1T‧-MoS2 under electron irradiation from ab initio molecular dynamics

    Science.gov (United States)

    Pizzochero, Michele; Yazyev, Oleg V.

    2018-04-01

    Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a detailed understanding of the beam-induced events occurring at the atomic scale is necessary. Here, we investigate the response of 1T' -MoS2 to the electron irradiation by ab initio molecular dynamics means. Our simulations suggest that an electron beam with energy smaller than 75 keV does not result in any knock-on damage. The displacement threshold energies are different for the two nonequivalent sulfur atoms in 1T' -MoS2 and strongly depend on whether the top or bottom chalcogen layer is considered. As a result, a careful tuning of the beam energy can promote the formation of ordered defects in the sample. We further discuss the effect of the electron irradiation in the neighborhood of a defective site, the mobility of the sulfur vacancies created and their tendency to aggregate. Overall, our work provides useful guidelines for the imaging and the defect engineering of 1T' -MoS2 using electron microscopy.

  16. Patterning of gold nano-octahedra using electron irradiation combined with thermal treatment and post-cleaning process

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Nam; Kum, Jong Min [Korea Advanced Institute of Science and Technology (KAIST), Department of Nuclear and Quantum Engineering (Korea, Republic of); Lee, Hyeok Moo [Korea Atomic Energy Research Institute (KAERI), Research Division for Industry and Environment (Korea, Republic of); Cho, Sung Oh, E-mail: socho@kaist.ac.kr [Korea Advanced Institute of Science and Technology (KAIST), Department of Nuclear and Quantum Engineering (Korea, Republic of)

    2012-03-15

    A novel approach to pattern nanocrystalline gold (Au) octahedra is presented based on electron irradiation combined with thermal treatment and post-cleaning process using HAuCl{sub 4}-loaded poly(styrene-b-2-vinyl pyridine) (PS-b-P2VP) block copolymer (BCP) as a precursor material. The BCP tends to cross-link under electron irradiation, and thus a patterned film can be prepared by selectively irradiating an electron beam onto a precursor film using a shadow mask. A post-thermal treatment leads to the formation of crystalline Au nano-octahedra inside the patterned film with a help of the BCP acting as a capping agent. Subsequently, the BCP can be removed by O{sub 2} plasma etching combined with oxidative degradation, with the Au nanoparticles remaining. As a result, a patterned film consisting of high-purity nanocrystalline Au octahedra is fabricated. The sizes of the Au octahedral nanoparticles can be readily controlled from 49 to 101 nm by changing the thickness of the precursor film. The patterned Au nano-octahedra films exhibit excellent surface-enhanced Raman scattering behavior with the maximum enhancement factor of {approx}10{sup 6}.

  17. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  18. In-situ transmission electron microscopy of the solid-phase epitaxial growth of GaAs: sample preparation and artifact characterization

    International Nuclear Information System (INIS)

    Llewellyn, D.J.; Llewellyn, D.J.; Belay, K.B.; Ridgway, M.C.

    1998-01-01

    In-situ transmission electron microscopy (TEM) has been used to characterize the solid phase epitaxial growth of amorphized GaAs at a temperature of 260 deg C. To maximize heat transfer from the heated holder to the sample and minimize electron-irradiation induced artifacts, non-conventional methodologies were utilized for the preparation of cross-sectional samples. GaAs 3x1 mm rectangular wafers were cleaved then glued face-to-face to form a wafer stack size of 3x3 mm while maintaining the TEM region at the center. This stack was subsequently polished on the cross-section to a thickness of ∼ 200 μm. A 3 mm disc was then cut perpendicular to the cross-section using a Gatan ultrasonic cutter. The disc was polished then dimpled on both sides to a thickness of ∼ 15 μm. This was ion-beam milled at liquid nitrogen temperature to an electron-transparent layer. From a comparison of in-situ and ex-situ measurements of the recrystallization rate, the actual sample temperature during in-situ characterization was estimated to deviate by ≤ 20 deg C from that of the heated holder. The influence of electron-irradiation was found to be negligible by comparing the recrystallization rate and microstructure of irradiated and unirradiated regions of comparable thickness. Similarly, the influence of the 'thin-foil effect' was found to be negligible by comparing the recrystallization rate and microstructure of thick and thin regions, the former determined after the removal of the sample from the microscope and further ion-beam milling of tens of microns of material. In conclusion, the potential influence of artifacts during in-situ TEM can be minimized by the appropriate choice of sample preparation procedures. (authors)

  19. Influence of electron irradiation on internal friction and structure evolution of polymer composites

    International Nuclear Information System (INIS)

    Ismailova, G.A.

    2007-01-01

    Full text: Important qualitative information on structural evolution and radiation alterations in polymer materials under the action of ionizing radiation can be obtained from the analysis of the temperature dependences of internal friction. Changing of internal friction parameters of relax maxima during irradiation is qualitative degree parameter of radiation scission-cross linking of the polymer molecules. In this work, the general phenomenological approach is realized by introduction of the effective 'observed' parameters into the simple kinetic equations. The applicability of such approach is justified by the fact that kinetics of both internal friction and scission-cross linking processes can be characterized by the same effective parameters. Temperature dependences of internal friction are experimentally studied in epoxy irradiated by 2.5 MeV pulse electron beam to different doses (D=3 MGy, 6 MGy and 9 MGy). Time dependences of internal friction characteristics associated with radiation-induced processes of polymer scission and cross-linking are analyzed and discussed. Experimental data on kinetics of structural transformations in epoxy are interpreted on the base of analytical solutions of differential equations for free radical accumulation during and after irradiation subject to the arbitrary effective order of radical recombination. It is shown that in the range of doses and dose rates under study radiation-induced scission predominates during polymer irradiation but in a certain period of time after irradiation scission changes to cross-linking. Characteristics of the kinetic curves obtained essentially depend on the dose

  20. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. A permanent magnet electron beam spread system used for a low energy electron irradiation accelerator

    International Nuclear Information System (INIS)

    Huang Jiang; Xiong Yongqian; Chen Dezhi; Liu Kaifeng; Yang Jun; Li Dong; Yu Tiaoqin; Fan Mingwu; Yang Bo

    2014-01-01

    The development of irradiation processing industry brings about various types of irradiation objects and expands the irradiation requirements for better uniformity and larger areas. This paper proposes an innovative design of a permanent magnet electron beam spread system. By clarifying its operation principles, the author verifies the feasibility of its application in irradiation accelerators for industrial use with the examples of its application in electron accelerators with energy ranging from 300 keV to 1 MeV. Based on the finite element analyses of electromagnetic fields and the charged particle dynamics, the author also conducts a simulation of electron dynamics in magnetic field on a computer. The results indicate that compared with the traditional electron beam scanning system, this system boosts the advantages of a larger spread area, non-power supply, simple structure and low cost, etc., which means it is not only suitable for the irradiation of objects with the shape of tubes, strips and panels, but can also achieve a desirable irradiation performance on irregular constructed objects of large size. (authors)

  2. Influence of electron irradiation at elevated temperatures on silicon diffuse structures with p-n-junctions

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Marchenko, I.G.

    2012-01-01

    The behavior of the lifetime of nonequilibrium carriers (τ), reverse current (I R ), and forward voltage drop (U F ) in industrial p + -n-n + -diodes irradiated with electrons (E=6 MeV) at temperatures for the range T irr = 20-400 Celsius degree was investigated. The tests were conducted on the samples manufactured on phosphorous doped single-crystal Si during the CZ growing process of ingot (KAF) and using the nuclear reactions (KOF). The investigation showed that the problem to reach smaller τ values with a minimal increase of U F and I R in fast diodes can be solved by means of selection of a technological irradiation temperature regime. It was determined that the comparable changes of the τ value in the diode base area, the best trade-off of U F and I R in the samples (KAF) is observed at T irr = 300 Celsius degree, and in the KOF samples at T irr = 350 Celsius degree. (authors)

  3. Tin-vacancy acceptor levels in electron-irradiated n-type silicon

    DEFF Research Database (Denmark)

    Larsen, A. Nylandsted; Goubet, J. J.; Mejlholm, P.

    2000-01-01

    Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron...... annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal...... temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating...

  4. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    Science.gov (United States)

    To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

  5. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

  6. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    International Nuclear Information System (INIS)

    To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

  7. Dose errors due to charge storage in electron irradiated plastic phantoms

    International Nuclear Information System (INIS)

    Galbraith, D.M.; Rawlinson, J.A.; Munro, P.

    1984-01-01

    Commercial plastics used for radiation dosimetry are good electrical insulators. Used in electron beams, these insulators store charge and produce internal electric fields large enough to measurably alter the electron dose distribution in the plastic. The reading per monitor unit from a cylindrical ion chamber imbedded in a polymethylmethacrylate (PMMA) or polystyrene phantom will increase with accumulated electron dose, the increase being detectable after about 20 Gy of 6-MeV electrons. The magnitude of the effect also depends on the type of the plastic, the thickness of the plastic, the wall thickness of the detector, the diameter and depth of the hole in the plastic, the energy of the electron beam, and the dose rate used. Effects of charge buildup have been documented elsewhere for very low energy electrons at extremely high doses and dose rates. Here we draw attention to the charging effects in plastics at the dose levels encountered in therapy dosimetry where ion chamber or other dosimeter readings may easily increase by 5% to 10% and where a phantom, once charged, will also affect subsequent readings taken in 60 Co beams and high-energy electron and x-ray beams for periods of several days to many months. It is recommended that conducting plastic phantoms replace PMMA and polystyrene phantoms in radiation dosimetry

  8. Dynamic investigation of electron trapping and charge decay in electron-irradiated Al sub 2 O sub 3 in a scanning electron microscope: Methodology and mechanisms

    CERN Document Server

    Fakhfakh, S; Belhaj, M; Fakhfakh, Z; Kallel, A; Rau, E I

    2002-01-01

    The charging and discharging of polycrystalline Al sub 2 O sub 3 submitted to electron-irradiation in a scanning electron microscope (SEM) are investigated by means of the displacement current method. To circumvent experimental shortcomings inherent to the use of the basic sample holder, a redesign of the latter is proposed and tests are carried out to verify its operation. The effects of the primary beam accelerating voltage on charging, flashover and discharging phenomena during and after electron-irradiation are studied. The experimental results are then analyzed. In particular, the divergence between the experimental data and those predicted by the total electron emission yield approach (TEEYA) is discussed. A partial discharge was observed immediately after the end of the electron-irradiation exposure. The experimental data suggests, that the discharge is due to the evacuation to the ground, along the insulator surface, of released electrons from shallow traps at (or in the close vicinity of) the insulat...

  9. A study of point defects created by electron irradiation of dilute iron-carbon alloys; Etude des defauts crees par irradiation electronique dans les alliages de fer carbone dilues

    Energy Technology Data Exchange (ETDEWEB)

    Leveque, J L [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1969-10-01

    Resistivity and magnetic after effect (m.a.e.) measurements are used to study the influence of carbon atoms on the annealing process of point defects created by electron irradiation (3 MeV) at low temperature (20 deg. K). The presence of the carbon atoms has a strong influence on the recovery sub-stage I{sub E} and stage III. For the former, the carbon impurity traps the freely migrating iron interstitial. For the latter the effect is interpreted as being due to formation during annealing, of a carbon vacancy pair. A pronounced m.a.e. band is attributed to the reorientation of this carbon vacancy complex. All these results are coherent with the interpretation of a low temperature migrating free interstitial. (author) [French] L'influence des atomes de carbone sur le recuit des defauts ponctuels crees par irradiation electronique (3 MeV) a basse temperature (20 deg. K) dans le fer est mise en evidence par des mesures de resistivite electrique, et de trainage magnetique. Cette influence se manifeste principalement au cours du sous stade I{sub E} et du stade III de resistivite. Au sous stade I{sub E} les atomes de carbone piegeraient les interstitiels libres de fer au cours de leur migration. Le stade III est interprete comme etant du a la recombinaison du carbone dans les lacunes. Une importante bande de tramage magnetique etant attribuee a la reorientation de ce complexe. Ces resultats sont coherents avec l'interpretation faisant migrer a basse temperature l'interstitiel libre. (auteur)

  10. Electron Spin Resonance Shift and Linewidth Broadening of Nitrogen-Vacancy Centers in Diamond as a Function of Electron Irradiation Dose

    OpenAIRE

    Kim, Edwin; Acosta, Victor M.; Bauch, Erik; Budker, Dmitry; Hemmer, Philip R.

    2009-01-01

    A high-nitrogen-concentration diamond sample was subject to 200-keV electron irradiation using a transmission electron microscope. The optical and spin-resonance properties of the nitrogen-vacancy (NV) color centers were investigated as a function of the irradiation dose up to 6.4\\times1021 e-/cm2. The microwave transition frequency of the NV- center was found to shift by up to 0.6% (17.1 MHz) and the linewidth broadened with increasing electron-irradiation dose. Unexpectedly, the measured ma...

  11. Radiation damage of silicon structures with electrons of 900 MeV

    CERN Document Server

    Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

    2002-01-01

    We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

  12. Effect of electron irradiation and bayberry polyphenols on the quality change of yellowfin tuna fillets during refrigerated storage

    Science.gov (United States)

    Bu, Tingting; Jin, Yang; Li, Xiaohui; Zhang, Jinjie; Xu, Dalun; Yang, Wenge; Lou, Qiaoming

    2017-09-01

    This study evaluated the synergistic effect of bayberry polyphenols and electron irradiation in controlling the chemical, microbiological and sensory changes of raw yellowfin tuna fillets at 4 °C for 7 days. The results indicated that the initial values of each index were dose-dependent. The dose of 5 kGy notably accelerated adenosine triphosphate degradation and lipid oxidation, while the doses of 1 and 3 kGy had acceptable sensory quality and yielded a shelf-life of 5 days. The addition of bayberry polyphenols had evident effect in inhibiting freshness breakdown, bacteria growth, histamine formation, and discoloration of tuna fillets. Bayberry polyphenols, as an antioxidant, could inhibit lipid oxidation and sensory side-effects made by irradiation up to 3 kGy. The dose of 1-3 kGy coupled with bayberry polyphenols was optimum to preserve tuna fillets which prolonged the shelf-life to 7 days.

  13. Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

    International Nuclear Information System (INIS)

    Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

    1981-01-01

    The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

  14. Orientation and properties of the blends on high-molecular mass polyacrylonitrile with trihydroxyethylenedimethacrylate under electron irradiation

    International Nuclear Information System (INIS)

    Lomonosova, N.V.

    1998-01-01

    Molecular orientation of the drawn blends of high- molecular-mass poly(acrylonitrile) containing 5-50 wt % of trihydroxyethylenedimethacrylate and a change in the orientation of the drawn samples upon irradiation with accelerated electrons was studied by methods of birefringence, isometric heating, and IR dichroism. The degree of orientation of the unirradiated blends containing certain amounts of oligomer exceed that of the individual polymer. In the region of large drawing ratios, the differential degree of orientation of the polymer matrix is not affected by the irradiation, while the orientation of the oligomer component increase. High values of the strength (600-730 MPa) and the modulus (18-22 GPa) of the compositions are due to the presence of a crystalline skeleton formed by unfolded chains of the polymer matrix stabilized by the electron irradiation induced cross-linking

  15. Medulloblastoma: Long-term follow-up of patients treated with electron irradiation of the spinal field

    International Nuclear Information System (INIS)

    Gaspar, L.E.; Dawson, D.J.; Tilley-Gulliford, S.A.; Banerjee, P.

    1991-01-01

    Thirty-two patients with posterior fossa medulloblastoma underwent treatment with electron irradiation to the spinal field. The 5- and 10-year actuarial survival rates were 57% and 50%, respectively. Late complications observed in the 15 patients followed up for more than 5 years were short stature (six patients), decreased sitting-standing height ratio (four patients), scoliosis (two patients), poor school performance (seven patients), xerostomia (one patient), esophageal stricture (one patient), pituitary dysfunction (four patients), primary hypothyroidism (one patient), bilateral eighth-nerve deafness (one patient), and carcinoma of the thyroid (one patient). Complications following treatment with electrons to a spinal field are compared with reported complications following treatment with photons to the spinal field. Although short-term reactions were minimal, the authors found no difference in late complications. More sophisticated treatment planning may show such a long-term benefit in the future

  16. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

    International Nuclear Information System (INIS)

    Vandevyver, M.

    1967-06-01

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

  17. Preparation of various hydrogels based on poly (Vinyl pyrrolidone) and poly ethylene glycol using gamma and electron irradiation

    International Nuclear Information System (INIS)

    Ajji, Z.

    2006-11-01

    Different hydrogels have been prepared using gamma and electron irradiation; the hydrogels are composed of poly(vinyl pyrolidone) (PVP), poly(ethylene glycol) (PEG). The influence of some process parameters on the properties of the hydrogels has been investigated as: the gel fraction, maximum swelling, swelling kinetics, and mechanical properties. In the first part of this study, hydrogel dressings have been prepared using electron irradiation, and the dressings are composed of poly(vinyl pyrrolidone) (PVP), poly(ethylene glycol) (PEG) and agar. The gel fraction increases with increasing PVP concentration due to increased crosslink density, and decreases with increasing the PEG concentration. PEG seems to act not only as plasticizer but also to modify the gel properties as gelation% and maximum swelling. The prepared hydrogels dressings could be considered as a good barrier against microbes. In the second part, different hydrogels have been prepared based on different concentrations of poly(vinyl pyrrolidone) and using gamma irradiation. The gel fraction and maximum swelling of the hydrogels has been determined. In the third part of the study, different hydrogels have been prepared based on different concentrations of poly(vinyl pyrrolidone) and poly(ethylene glycol) (PEG) with various molecular weights, and using gamma irradiation. The gel fraction and maximum swelling of the hydrogels has been determined. The data show that PEG with low molecular weight needs a high dose for the gelation, and the presence of PVP lowers the needed gelation dose. The maximum swelling decreases with increasing irradiation dose and the PVP concentration, which is due to higher crosslinks between the polymer chains. (author)

  18. Electron irradiation effect on short-range ordering in Cu-Al and Ag-Al alloys

    International Nuclear Information System (INIS)

    Kulish, N.P.; Mel'nikova, N.A.; Petrenko, P.V.; Ryabishchuk, A.L.; Tatarov, A.A.

    1990-01-01

    Method of X-ray diffuse scattering is used to study short-range order variation in Cu-Al and Ag-Al alloys under radiation effect and the following heat treatment. Irradiation was carried out at -40 deg C by 1.6 MeV electrons, fluence of 5x10 7 cm -2 and 0.5 MeV gamma-rays, the dose being 10 7 pH

  19. 6 MeV pulsed electron beam induced surface and structural changes in polyimide

    Energy Technology Data Exchange (ETDEWEB)

    Mathakari, Narendra L.; Bhoraskar, Vasant N. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Dhole, Sanjay D., E-mail: sanjay@physics.unipune.ernet.i [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India)

    2010-04-15

    Thin films of polyimide (PMDA-ODA, Kapton) having 50 mum thickness were irradiated with 6 MeV pulsed electron beam. The bulk and surface properties of pristine and irradiated samples were characterized by several techniques such as stress-strain measurements, Fourier Transform Infrared (FTIR), UV-vis spectroscopy, contact angle, atomic force microscopy (AFM) and profilometry. The tensile strength, percentage elongation and strain energy show an enhancement from pristine value of 73-89 MPa, 10-22% and 4.75-14.2 MJ/m{sup 3} respectively at the maximum fluence of 4 x 10{sup 15} electrons/cm{sup 2}. This signifies that polyimide being an excessively aromatic polymer is crosslinked due to high-energy electron irradiation. In surface properties, the contact angle shows a significant decrease from 59 deg. to 32 deg. indicating enhancement in hydrophilicity. This mainly attributes to surface roughening, which is due to the electron beam induced sputtering. The surface roughening is confirmed in AFM and profilometry measurements. The AFM images clearly show that surface roughness increases after electron irradiation. Moreover, the roughness average (R{sub a}) as measured from surface profilograms is found to increase from 0.06 to 0.1. The FTIR and UV-vis spectra do not show noticeable changes as regards to scissioning of bonds and the oxidation. This work leads to a definite conclusion that 6 MeV pulsed electron beam can be used to bring about desired changes in surface as well as bulk properties of polyimide, which is considered to be a high performance space quality polymer.

  20. Temperature Dependency and Alpha Response of Semi-Insulating GaAs Schottky Radiation Detector at Low Bias Voltage

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Park, Se Hwan; Kim, Han Soo; Kim, Yong Kyun

    2009-01-01

    The last decade has seen a growing interest in semiconductor radiation detectors operated at room or nearly room temperature. Great efforts have been invested in the development of radiation detectors based on semi-insulating (SI) GaAs. The main reasons are as follows: (i) high resistance against radiation damage; (ii) it possesses a good energy resolution, which relates to its active volume; (iii) such a detector also exhibits fast signal rise times, which results from a high mobility and drift velocity of charge carriers; (iv) its large band gap energy allows a SI GaAs detector to operate at room temperature. Other important features are a good technology base and low production and operating costs. An alpha particle monitoring method for the detection of Pu-238 and U-235 is becoming important in homeland security. Alpha measurement in a vacuum is known to provide a good resolution sufficient to separate an isotope abundance in nuclear materials. However, in order to apply it to a high radiation field like a spent fuel treatment facility, a nuclear material loading and unloading process in a vacuum is one of the great disadvantages. Therefore, the main technical issue is to develop a detector for alpha detection at air condition and low power operation for integration type device. In this study we fabricated GaAs Schottky detector by using semi-insulating (SI) wafer and measured current-voltage characteristic curve and alpha response with 5.5 MeV Am-241 source

  1. Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

    Science.gov (United States)

    Schultz, Peter

    To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  2. Panel fabrication utilizing GaAs solar cells

    Science.gov (United States)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  3. Optical pumping of hot phonons in GaAs

    International Nuclear Information System (INIS)

    Collins, C.L.; Yu, P.Y.

    1982-01-01

    Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

  4. Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

    Science.gov (United States)

    Miah, M Idrish

    2009-05-14

    We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

  5. GaAs Led based NIEL spectrometer for the space radiation environment

    International Nuclear Information System (INIS)

    Houdayer, A.J.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.

    1999-01-01

    A NIEL (non-ionizing-energy-loss) spectrometer for the Mir space station is described. The NIEL spectrometer package contained 20 GaAs LEDs, 10 SiC LEDs and 13 locations for TLD-700s. In order to probe different energy regions of the radiation field, the package is divided into 4 compartments covered by absorbers of varying thicknesses. This device has been submitted to proton irradiation. The effects on both the response time and the intensity of the light were measured as a function of the fluence. One of the advantages of LEDs as radiation monitors is their sensitivity and it is shown that it would be possible to detect a fluence of 4*10 7 p/cm 2 of 10 MeV protons, with sensitivity scaled as 1/E for other energies. (A.C.)

  6. Calculation of equivalent dose index for electrons from 5,0 to 22,0 MeV by the Monte Carlo method

    International Nuclear Information System (INIS)

    Peixoto, J.E.

    1979-01-01

    The index of equivalent dose in depth and in a sphere surface of a soft tissue equivalent material were determined by Monte Carlo method for electron irradiations from 5,0 to 22.00 MeV. The effect of different irradiation geometries which simulate the incidence of onedirectional opposite rotational and isotropic beams was studied. It is also shown that the detector of wall thickness with 0.5g/cm 2 and isotropic response com be used to measure index of equivalent dose for fast electrons. The alternative concept of average equivalent dose for radiation protection is discussed. (M.C.K.) [pt

  7. Peeled film GaAs solar cell development

    International Nuclear Information System (INIS)

    Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

    1990-01-01

    Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

  8. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    Science.gov (United States)

    Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

    2018-01-01

    Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  9. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    Directory of Open Access Journals (Sweden)

    Wei-Fu Wang

    2018-01-01

    Full Text Available Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3 along with diffused germanium donors whose concentration (>>1018/cm3 determined by electro-chemical capacitance-voltage (ECV profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  10. Magnetic, thermal and luminescence properties in room-temperature nanosecond electron-irradiated various metal oxide nanopowders

    Science.gov (United States)

    Sokovnin, S. Yu; Balezin, M. E.; Il’ves, V. G.

    2018-03-01

    By means of pulsed electron beam evaporation in vacuum of targets non-magnetic, in bulk state, Al2O3 and YSZ (ZrO2-8% Y2O3) oxides, magnetic nanopowders (NPs) with a high specific surface were produced. The NPs were subsequently irradiated in air by electrons with energy of 700 keV, using a URT-1 accelerator for 15 and 30 minutes. The magnetic, thermal, and pulsed cathodoluminescence (PCL) characteristics of NPs were measured before and after irradiation. It was established that the electron irradiation non-monotonically changes the magnetization of the pristine samples. To the contrary, a clear correlation between the intensity of PCL and the irradiation doses is found in the oxides. There was a decrease in the intensity of PCL after irradiation. Luminescent and thermal properties reflect the transformation of structural defects in NPs more strongly after the exposure to a pulsed electron beam in comparison with corresponding changes of the NPs magnetic response.

  11. Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1988-01-01

    Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation at 300 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b>a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3x10/sup 18/ cm/sup -2/ s/sup -1/, extended defects were observed to form and grow to sizes of 10-50 nm over 1000 s in material thickness 20-200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis

  12. Effect of gamma-ray and electron irradiation on the response of solid-state track detectors

    International Nuclear Information System (INIS)

    Fukuda, Kyue

    1980-01-01

    Specimens of muscovite mica were first exposed to fission fragments and then to various gamma-ray fields from a 60 Co source ranging from 1.9 x 10 3 to 1.6 x 10 4 Mrad dose. The results show that the average etched width of fission-fragment tracks decreases with increasing gamma-ray dose. Shallow pits were observed in etched specimens when the gamma-ray dose exceeded 5 x 10 3 Mrad. Numerous shallow etch pits caused by the gamma-ray irradiation interfered with the observation of fission tracks in the specimens. No shallow etch pits were observed in the specimen annealed for 100 min at 600 0 C before the gamma-ray irradiation. Pre-annealing extends the ''safety limits'' of gamma background below which muscovite mica can be used to observe fission tracks without any gamma-ray interference. Gamma-ray and electron irradiation caused significant increase of the resistance to thermal decomposition of muscovite mica. The resistance increased markedly in the dose range from 5 x 10 3 to 8 x 10 3 Mrad. These phenomena suggest the use of mica to assess radiation doses of gamma rays and electrons up to several thousand megarads. (author)

  13. Synthesis of gold and silver nanoparticles by electron irradiation at 5-15 keV energy

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S K; Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

    2007-04-04

    Thin coatings ({approx}10 {mu}m) made from a mixture of polyvinyl alcohol (PVA) and HAuCl{sub 4} or PVA and AgNO{sub 3} on quartz plates were irradiated with 5-15 keV electrons, at room temperature. The electron energy was varied from coating to coating in the range of 5-15 keV, but electron fluence was kept constant at {approx}10{sup 15} e cm{sup -2}. Samples were characterized by the UV-vis, XRD, SEM and TEM techniques. The plasmon absorption peaks at {approx}511 and {approx}442 nm confirmed the formation of gold and silver nanoparticles in the respective electron-irradiated coatings. The XRD, SEM and TEM measurements reveal that the average size of the particles could be tailored in the range of 130-50 nm for gold and from 150-40 nm for silver by varying the electron energy in the range of 5-15 keV. These particles of gold and silver embedded in the polymer could also be separated by dissolving the coatings in distilled water.

  14. Multiscale models of metal behaviour and structural change under the action of high-current electron irradiation

    International Nuclear Information System (INIS)

    Mayer, A E; Krasnikov, V S; Mayer, P N; Pogorelko, V V

    2017-01-01

    We present our models of the tensile fracture of metals in the solid and molten states, the melting and the plastic deformation of the solid metals. Also we discuss implementation of these models for simulation of the high current electron beam impact on metals. The models are constructed in the following way: the atomistic simulations are used at the first stage for investigation of dynamics and kinetics of structural defects in material (voids, dislocations, melting cites); equations describing evolution of such defects are constructed, verified, and their parameters are identified by means of comparison with the atomistic simulation result; finally, the defects evolution equations are incorporated into the continuum model of the substance behaviour on the macroscopic scale. The obtained continuum models with accounting of defects subsystems are tested in comparison with the experimental results known from literature. The proposed models not only allow one to describe the metal behaviour under the conditions of intensive electron irradiation, but they also allow one to determine the structural changes in the irradiated material. (paper)

  15. Effect of electron irradiation in hatching eggs experimentally inoculated with salmonella enteriditis, on hatch ability and broiler performance

    International Nuclear Information System (INIS)

    Castaneda S, M.P.

    1995-01-01

    The effect of four doses of electrons irradaition on bacteriologic population in hatching egg following experimental shell contamination with Salmonella enteriditis phage type 13 was investigated. Fresh, whole, intact raw eggs were inoculated with 10 9 Colony-Forming Units of Salmonella enteriditis, eggs were irradiated with a beam electron source at either: 0.5, 1, 2 and 3 KGy. The bacteriologic evaluation was made with Gentry's and Williams' technic. After the irradiation the groups were taken to commercial hatchery and were incubated in satndards conditions. The bacteriologic evaluation of the shell showed a significant 2.8 log reduction on the group of eggs that were irradiated with 1 KGy as compared with 0.5 KGy doses group and control group (P<0.05). A negative correlation (r=-0.93) between irradiation doses and CFU (P<0.05) was also observed. Bacteriologic evaluation of the internal shell membrane exhibited a highly significant inactivation (P<0.01) of S. enteriditis of 100% in the group of eggs irradiated at 2 and 3 kGy. A high negative correlation (r=-0.90) between irradiation doses and samples of internal structures (P<0.05) was observed. The results obtained suggested that the electrons irradiation may be use like a control system of salmonelosis on egg and like desinfection system on hatching eggs because it did not cause any effect on hatchability and broiler performance. (Author)

  16. Effects of intraoperative electron irradiation in the dog on cell turnover in intact and surgically-anastomosed aorta and intestine

    International Nuclear Information System (INIS)

    Sindelar, W.F.; Morrow, B.M.; Travis, E.L.; Tepper, J.; Merkel, A.B.; Kranda, K.; Terrill, R.

    1983-01-01

    Adults dogs were subjected to laparotomy and intraoperative electron irradiation after division and reanastomosis of aorta or after construction of a blind loop of small intestine having a transverse suture line and an end-to-side anastomosis. Dogs received intraoperative irradiation of both intact and anastomosed aorta or intestine in doses of 0, 2000, 3000, or 4500 rad. Animals were sacrificed at seven days or three months following treatment. At 24 hours prior to sacrifice, dogs received 5 mCi tritiated thymidine intravenously. Irradiated and non-irradiated segments of aorta and small intestine, including intact and anastomotic regions, were analyzed for tritiated thymidine incorporation and were subjected to autoradiography. Incorporation studies showed diminution in tritiated thymidine uptake by irradiated portions of aorta and small intestine, in both intact and anastomotic regions. Autoradiograms revealed that irradiated areas of intact or anastomotic aorta or intestine had diminished labeling of stromal cells, suggesting a lowered cell proliferative capacity of irradiated tissue compared to non-irradiated portions. Inflammatory cells showed similar labeling indices in irradiated and non-irradiated tissues, both intact and surgically-manipulated, suggesting that irradiation does not significantly affect a subsequent local inflammatory response. Radiation-induced decreases in tritiated thymidine incoporation in irradiated aorta and small intestine were generally more marked at seven days than at three months following irradiation, suggesting that radiation-induced depression of cell turnover rates decreases with time

  17. The action of a dietary retinoid on gene expression and cancer induction in electron-irradiated rat skin

    International Nuclear Information System (INIS)

    Burns, F.J.; Chen, S.; Xu, G.; Wu, F.; Tang, M.S.

    2002-01-01

    Current models of radiation carcinogenesis generally assume that the DNA is damaged in a variety of ways by the radiation and that subsequent cell divisions contribute to the conversion of the damage to heritable mutations. Cancer may seem complex and intractable, but its complexity provides multiple opportunities for preventive interventions. Mitotic inhibitors are among the strongest cancer preventive agents, not only slowing the growth rate of preneoplasias but also increasing the fidelity of DNA repair processes. Ionizing radiation, including electrons, is a strong inducer of cancer in rat skin, and dietary retinoids have shown potent cancer preventive activity in the same system. A non-toxic dietary dose of retinyl acetate altered gene expression levels 24 hours after electron irradiation of rat skin. Of the 8740 genes on an Affymetrix rat expression array, the radiation significantly (5 fold or higher) altered 188, while the retinoid altered 231, including 16 radiation-altered genes that were reversely altered. While radiation strongly affected the expression of stress response, immune/inflammation and nucleic acid metabolism genes, the retinoid most strongly affected proliferation-related genes, including some significant reversals, such as, keratin 14, retinol binding protein, and calcium binding proteins. These results point to reversal of proliferation-relevant genes as a likely basis for the anti-radiogenic effects of dietary retinyl acetate. (author)

  18. Dependence of high density nitrogen-vacancy center ensemble coherence on electron irradiation doses and annealing time

    Science.gov (United States)

    Zhang, C.; Yuan, H.; Zhang, N.; Xu, L. X.; Li, B.; Cheng, G. D.; Wang, Y.; Gui, Q.; Fang, J. C.

    2017-12-01

    Negatively charged nitrogen-vacancy (NV-) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV- center ensemble on a large scale with a long coherence lifetime. In this work, the NV- center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble—T 2—was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2. To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV- centers along three directions to improve fluorescence signal contrast. Finally, NV- center ensembles with a high concentration of roughly 1015 mm-3 were manipulated within a ~10 µs coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV- center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.

  19. Photocatalytic activity enhancement by electron irradiation of fullerene derivative-TiO2 nanoparticles under visible light illumination

    International Nuclear Information System (INIS)

    Cho, Sung Oh; Yoo, Seung Hwa; Lee, Dong Hoon

    2011-01-01

    Photocatalytic decomposition of aqueous organic pollutant have attracted many interest due to its simple, low cost, and clean procedure. By only using the sun light and photocatalyst, especially TiO 2 nanoparticles based systems have been extensively studied and commercialized for real life application. However, TiO 2 has a critical disadvantage, which can only absorb the ultra-violet region of the solar spectrum, due to the large band-gap of 3.2 eV. Extensive studies have been preformed to expand the light absorption of TiO 2 to the visible light region of the solar spectrum, by doping metal or non-metal elements on TiO 2 or attaching small band-gap semiconductors on TiO 2 . In this study, a fullerene derivative 1-(3- carboxypropyl)-1-phenyl[6,6]C 61 (PCBA) was attached on the surface of TiO 2 nanoparticles, and its photocatalytic activity was evaluated by decomposition of methyl orange under visible light. Furthermore, enhancement in the photocatalytic activity of these nanoparticles by electron irradiation is discussed

  20. Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovski, V.V. [St. Petersburg State Polytechnic University, St. Petersburg 195251 (Russian Federation); Lebedev, A.A., E-mail: shura.lebe@mail.ioffe.ru [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101 (Russian Federation); Emtsev, V.V.; Oganesyan, G.A. [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

    2016-10-01

    Processes of radiation defect formation and conductivity compensation in silicon and silicon carbide irradiated with 0.9 MeV electrons are considered in comparison with the electron irradiation at higher energies. The experimental values of the carrier removal rate at the electron energy of 0.9 MeV are nearly an order of magnitude smaller than the similar values of the parameter for higher energy electrons (6–9 MeV). At the same time, the formation cross-section of primary radiation defects (Frenkel pairs, FPs) is nearly energy-independent in this range. It is assumed that these differences are due to the influence exerted by the energy of primary knocked-on atoms (PKAs). As the PKA energy increases, the average distance between the genetically related FPs grows and, as a consequence, the fraction of FPs unrecombined under irradiation becomes larger. The FP recombination radius is estimated (∼1.1 nm), which makes it possible to ascertain the charge state of the recombining components. Second, the increase in the PKA energy enables formation of new, more complex secondary radiation defects. At electron energies exceeding 15 MeV, the average PKA energies are closer to the values obtained under irradiation with 1 MeV protons, compared with an electron irradiation at the same energy. As for the radiation-induced defect formation, the irradiation of silicon with MeV protons can be, in principle, regarded as a superposition of the irradiation with 1 MeV electrons and that with silicon ions having energy of ∼1 keV, with the “source” of silicon ions generating these ions uniformly across the sample thickness.

  1. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  2. Electrode pattern design for GaAs betavoltaic batteries

    International Nuclear Information System (INIS)

    Chen Haiyang; Yin Jianhua; Li Darang

    2011-01-01

    The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63 Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63 Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

  3. Surface barrier analysis of semi-insulating and n{sup +}-type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Gregory M. [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada); Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Bensebaa, Farid [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Dubowski, Jan J., E-mail: jan.j.dubowski@usherbrooke.ca [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada)

    2011-02-15

    The surface Fermi level of semi-insulating and n{sup +}-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50 meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction.

  4. DEGRADATION OF SOLAR CELLS PARAMETERS FABRICATED ON THE BASIS OF Cu(In,GaSe2 SEMICONDUCTOR SOLID SOLUTIONS UNDER ELECTRON IRRADIATION

    Directory of Open Access Journals (Sweden)

    A. V. Mudryi

    2014-01-01

    Full Text Available Polycrystalline Cu(In,GaSe2 (CIGS thin films were grown on molybdenum-coated soda-lime glass substrates by co-evaporation of the elements Cu, In, Ga and Se from independent sources. The effect of electron irradiation on the electrical and optical properties of CIGS thin films and solar cells with the structure ZnO:Al/i-ZnO/CdS/CIGS/Mo/glass was studied. It was found that the degradation of the electrical parameters of solar cells (open-circuit voltage, short-circuit current density and efficiency took place due to the formation of radiation defects (recombination centers with deep energy levels in the bandgap of CIGS. It was revealed that after electron irradiation intensity of near band-edge luminescence band at about 1,1 eV decreased considerably and bands of luminescence with maxima at 0,93 and 0,75 eV appeared.

  5. Dissolution and growth of precipitates under electron irradiation in an Al-11.8 at % Zn alloy by small angle neutron scattering

    International Nuclear Information System (INIS)

    Baig, M.R.

    1995-01-01

    Dissolution and growth of precipitates in a room temperature aged Al-11.8 at % Zn alloy have been studied under electron irradiation using small angle neutron scattering (SANS). A series of electron irradiations were performed on each sample and SANS measurements were made on each irradiation. In general for low doses the results show an initial decrease in the magnitude of the scattering, but associated with an increase in the precipitate size. This is followed on prolonged irradiation by an increase in the magnitude of the scattering with a continued increase in precipitate size. It is believed, that at low doses some precipitate grow in size but others may dissolve in the matrix, which then becomes supersaturated. With the enhanced rate of diffusion as a result of the irradiation, the remaining precipitates grow rapidly. As the supersaturation reduces, a coarsening mechanism takes over, via a radiation enhanced diffusion mechanism

  6. Robust s± pairing in CaK (Fe1-xNix) 4As4 (x =0 and 0.05) from the response to electron irradiation

    Science.gov (United States)

    Teknowijoyo, S.; Cho, K.; Kończykowski, M.; Timmons, E. I.; Tanatar, M. A.; Meier, W. R.; Xu, M.; Bud'ko, S. L.; Canfield, P. C.; Prozorov, R.

    2018-04-01

    Controlled pointlike disorder introduced by 2.5-MeV electron irradiation was used to probe the superconducting state of single crystals of CaK (Fe1-xNix) 4As4 superconductor at x =0 and 0.05 doping levels. Both compositions show an increase of the residual resistivity and a decrease of the superconducting transition temperature, Tc, at the rate of d Tc/d ρ (Tc) ≈0.19 K/(μ Ω cm ) for x =0 and 0.38 K/(μ Ω cm ) for x =0.05 , respectively. In the Ni-doped compound (x =0.05 ), the coexisting spin-vortex crystal (SVC) magnetic phase is suppressed at the rate of d TN/d ρ (TN) ≈ 0.16 K/(μ Ω cm ). The low-temperature variation of London penetration depth is well approximated by the power-law function, Δ λ (T ) =A Tn , with n ≈2.5 for x =0 and n ≈1.9 for x =0.05 in the pristine state. Detailed analysis of λ (T ) and Tc evolution with disorder is consistent with two effective nodeless energy gaps in the density of states due to robust s± pairing. Overall the behavior of CaK (Fe1-xNix) 4As4 at x =0 is similar to a slightly overdoped Ba1 -yKyFe2As2 at y ≈ 0.5, and at x =0.05 to an underdoped composition at y ≈ 0.2.

  7. Spin injection into GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Bernhard

    2013-11-01

    In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

  8. Optical properties of GaAs

    International Nuclear Information System (INIS)

    Akinlami, J. O.; Ashamu, A. O.

    2013-01-01

    We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6–6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22 × 10 8 m −1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2 × 10 15 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8 × 10 15 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results. (semiconductor physics)

  9. The study of composition changes in thin film coatings of Ge-As-Se type under relativistic electron irradiation by means of electron Auger spectroscopy

    International Nuclear Information System (INIS)

    Kesler, L.G.; Dovgoshej, N.I.; Savchenko, N.D.

    1991-01-01

    Data on the influence of relativistic electrons on depth profile of Ge 33 As 12 Se 55 films were obtained for the first time. It was established that the most sufficient change of element composition of films in result of electron irradiation took place in the surface layer and on film-sublayer interface. It can be explained by increase of diffusion of impurities and free atoms

  10. Preparation of GaAs photocathodes at low temperature

    International Nuclear Information System (INIS)

    Mulhollan, G.; Clendenin, J.; Tang, H.

    1996-10-01

    The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated

  11. Comparisons of single event vulnerability of GaAs SRAMS

    Science.gov (United States)

    Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

    1986-12-01

    A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

  12. Electrodeposition of Metal on GaAs Nanowires

    Science.gov (United States)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  13. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  14. Heats of adsorption of Pb on pristine and electron-irradiated poly(methyl methacrylate) by microcalorimetry

    Science.gov (United States)

    Diaz, S. F.; Zhu, J. F.; Harris, J. J. W.; Goetsch, P.; Merte, L. R.; Campbell, Charles T.

    2005-12-01

    The heat of adsorption and sticking probability were measured for Pb gas atoms adsorbing onto clean poly(methyl methacrylate) (PMMA) and electron-irradiated PMMA. The Pb atoms interact very weakly with the outgassed pristine PMMA surface, with a sticking probability of 0.02 ± 0.02. They deposit a heat into the PMMA of 12.7 ± 0.7 kJ/mol of dosed Pb, independent of Pb exposure up to 10 ML. This is slightly less than would be expected even if no Pb atoms stuck to the PMMA, but if they completely thermally accommodated to the substrate temperature during their collision with the surface. This proves that thermal accommodation is incomplete, highlighting the weakness of the Pb-PMMA interaction. Damaging the PMMA surface with electrons causes an increase in reactivity with Pb, as shown by increases in the initial heat of adsorption up to 134.0 ± 0.7 kJ/mol and the initial sticking probability up to 0.51 ± 0.01. These both increase with increasing coverage toward the values expected for Pb adsorption onto a bulk Pb surface with coverage dependences suggesting that metal islands nucleate at electron-induced defects, and grow into large 3D islands of low number density. This is the first calorimetric measurement of any metal adsorption energy onto any polymer surface wherein the sticking probability of the metal also was measured. The PMMA film was spin coated directly onto the heat detector, a pyroelectric polymer foil (polyvinylidene fluoride—PVDF) precoated on both sides with thin metal electrodes. It provides a detector sensitivity of ˜450 V/J with a pulse-to-pulse standard deviation of 1.2 kJ/mol and absolute accuracy within 2%.

  15. SU-F-T-248: FMEA Risk Analysis Implementation (AAPM TG-100) in Total Skin Electron Irradiation Technique

    Energy Technology Data Exchange (ETDEWEB)

    Ibanez-Rosello, B; Bautista-Ballesteros, J; Bonaque, J [Hospital La Fe, Valencia, Valencia (Spain); Perez-Calatayud, J [Hospital La Fe, Valencia, Valencia (Spain); Clinica Benidorm, Benidorm, Alicante (Spain); Gonzalez-Sanchis, A; Lopez-Torrecilla, J; Brualla-Gonzalez, L; Garcia-Hernandez, T; Vicedo-Gonzalez, A; Granero, D; Serrano, A; Borderia, B; Solera, C [Hospital General ERESA, Valencia, Valencia (Spain); Rosello, J [Hospital General ERESA, Valencia, Valencia (Spain); Universidad de Valencia, Valencia, Valencia (Spain)

    2016-06-15

    Purpose: Total Skin Electron Irradiation (TSEI) is a radiotherapy treatment which involves irradiating the entire body surface as homogeneously as possible. It is composed of an extensive multi-step technique in which quality management requires high consumption of resources and a fluid communication between the involved staff, necessary to improve the safety of treatment. The TG-100 proposes a new perspective of quality management in radiotherapy, presenting a systematic method of risk analysis throughout the global flow of the stages through the patient. The purpose of this work has been to apply TG-100 approach to the TSEI procedure in our institution. Methods: A multidisciplinary team specifically targeting TSEI procedure was formed, that met regularly and jointly developed the process map (PM), following TG-100 guidelines of the AAPM. This PM is a visual representation of the temporal flow of steps through the patient since start until the end of his stay in the radiotherapy service. Results: This is the first stage of the full risk analysis, which is being carried out in the center. The PM provides an overview of the process and facilitates the understanding of the team members who will participate in the subsequent analysis. Currently, the team is implementing the analysis of failure modes and effects (FMEA). The failure modes of each of the steps have been identified and assessors are assigning a value of severity (S), frequency of occurrence (O) and lack of detection (D) individually. To our knowledge, this is the first PM made for the TSEI. The developed PM can be useful for those centers that intend to implement the TSEI technique. Conclusion: The PM of TSEI technique has been established, as the first stage of full risk analysis, performed in a reference center in this treatment.

  16. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  17. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  18. Subnanosecond linear GaAs photoconductive switching: Revision 1

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

    1989-01-01

    We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

  19. Subnanosecond linear GaAs photoconductive switching, revision 1

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

    Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

  20. Design optimization of GaAs betavoltaic batteries

    International Nuclear Information System (INIS)

    Chen Haiyanag; Jiang Lan; Chen Xuyuan

    2011-01-01

    GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm -2 63 Ni, the open circuit voltage of the optimized batteries is about ∼0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P + PN + junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm -2 , which indicates a carrier diffusion length of less than 1 μm. The overall results show that multi-layer P + PN + junctions are the preferred structures for GaAs betavoltaic battery design.

  1. Fractionation study: survival of mouse intestinal crypts to exposure of 60Co and 11 MeV electrons

    International Nuclear Information System (INIS)

    Coffey, C.W.

    1975-01-01

    The study was conducted to determine a statistical procedure for the quantification of time, dose, fraction relations for mouse intestinal crypt survival after fractionated Co-60 and 11-MeV electron irradiation. In the initial phase of the investigation CDF/1 male mice were exposed to fractionated Co-60 irradiation. A completely randomized experimental design with three factors, total time from initiation to completion of fractionation schedule, number of fractions, and total dose was utilized. The experimental animals were irradiated with a Co-60 panoramic irradiator unit at an absorbed dose rate of approximately 51 rads per minute. Two days after completion of the fractionation schedule, the experimental animals were sacrificed by cervical dislocation. Sections of intestinal jejunum were resected and routine histological preparations performed. The surviving crypts were scored with a compound microscope using a quantitative counting technique. The resulting crypt survival was observed to increase for increasing total times and fraction numbers

  2. Investigation of the effect of some irradiation parameters on the response of various types of dosimeters to electron irradiation

    International Nuclear Information System (INIS)

    Farah, K.; Kuntz, F.; Kadri, O.; Ghedira, L.

    2004-01-01

    Several undyed and dyed polymer films are commercially available for dosimetry in intense radiation fields, especially for radiation processing of food and sterilisation of medical devices. The effects of temperature during irradiation and post-irradiation stability, on the response of these dosimeters are of importance to operators of irradiation facilities. The present study investigates the effects of temperature during irradiation by 2.2 MeV electrons beam accelerator and post irradiation storage on the response of several types of dosimeter films. All dosimeters showed a significant effect of temperature during irradiation and post-irradiation storage

  3. Investigation of the effect of some irradiation parameters on the response of various types of dosimeters to electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Farah, K. E-mail: k.farah@cnstn.rnrt.tn; Kuntz, F.; Kadri, O.; Ghedira, L

    2004-10-01

    Several undyed and dyed polymer films are commercially available for dosimetry in intense radiation fields, especially for radiation processing of food and sterilisation of medical devices. The effects of temperature during irradiation and post-irradiation stability, on the response of these dosimeters are of importance to operators of irradiation facilities. The present study investigates the effects of temperature during irradiation by 2.2 MeV electrons beam accelerator and post irradiation storage on the response of several types of dosimeter films. All dosimeters showed a significant effect of temperature during irradiation and post-irradiation storage.

  4. 3-D GaAs radiation detectors

    International Nuclear Information System (INIS)

    Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

  5. Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

    Science.gov (United States)

    Nicoletta, C. A.

    1973-01-01

    One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

  6. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  7. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

    Directory of Open Access Journals (Sweden)

    Nigamananda Samal

    2010-02-01

    Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

  8. Modification of Structure and Tribological Properties of the Surface Layer of Metal-Ceramic Composite under Electron Irradiation in the Plasmas of Inert Gases

    Science.gov (United States)

    Ovcharenko, V. E.; Ivanov, K. V.; Mohovikov, A. A.; Yu, B.; Xu, Yu; Zhong, L.

    2018-01-01

    Metal-ceramic composites are the main materials for high-load parts in tribomechanical systems. Modern approaches to extend the operation life of tribomechanical systems are based on increasing the strength and tribological properties of the surface layer having 100 to 200 microns in depth. The essential improvement of the properties occurs when high dispersed structure is formed in the surface layer using high-energy processing. As a result of the dispersed structure formation the more uniform distribution of elastic stresses takes place under mechanical or thermal action, the energy of stress concentrators emergence significantly increases and the probability of internal defects formation reduces. The promising method to form the dispersed structure in the surface layer is pulse electron irradiation in the plasmas of inert gases combining electron irradiation and ion bombardment in one process. The present work reports upon the effect of pulse electron irradiation in plasmas of different inert gases with different atomic mass and ionization energy on the structure and tribological properties of the surface layer of TiC/(Ni-Cr) metal-ceramic composite with the volume ratio of the component being 50:50. It is experimentally shown that high-dispersed heterophase structure with a fraction of nanosized particles is formed during the irradiation. Electron microscopy study reveals that refining of the initial coarse TiC particles occurs via their dissolution in the molten metal binder followed by the precipitation of secondary fine particles in the interparticle layers of the binder. The depth of modified layer and the fraction of nanosized particles increase when the atomic number of the plasma gas increases and ionization energy decreases. The wear resistance of metal-ceramic composite improves in accordance to the formation of nanocrystalline structure in the surface layer.

  9. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  10. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R.; Byrne, A.P.; Ridgway, M.C.

    2005-01-01

    Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

  11. Radiosensitivity of chlorella after medium energy accelerated electron irradiation; Radiosensibilite des chlorelles aux electrons acceleres de moyenne energie

    Energy Technology Data Exchange (ETDEWEB)

    Roux, J C [commissariat a L' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1966-06-01

    The survival curves (capability of multiplication) of chlorella pyrenoidosa after irradiations can be used for soft electrons (0.65 and 1 MeV), hence penetrating into only 2 to 4 millimeters of water: the algae are laying on porous membranes and the doses are calculated from the power of the electron beam measured by the electric current on a metallic target or by Fricke's dosimetry. With these techniques, it is showed and discussed the part of anoxia in the radioprotection (magnitude or reduction of the dose calculated from the slope of survival curves: 2.5 ) that is more important than the restoration studied by the fractionation of the dose. The 0.65 and 1 MeV electrons have a biologic effect lesser than 180 keV X-rays (RBE - relative biological efficiency - calculated on the slope of survival curves is 0.92 in aerated irradiation, 0.56 in the deoxygenated irradiation). (author) [French] Les courbes de survie clonale (capacite de multiplication) de chlorella pyrenoidosa apres irradiation sont realisables meme avec des electrons peu energetiques (0.65 et 1 MeV), donc peu penetrants, par l'irradiation d'algues deposees sur membrane filtrante et grace au calcul de la dose a partir de l'energie du faisceau mesure par le courant que celui-ci cree dans une cible metallique ou par dosimetrie de Fricke. Par ces techniques, on a montre et discute le role de l'anoxie dans la radioprotection des chlorelles (facteur de reduction de la dose calcule sur la pente des courbes de survie de 2.5) qui est plus important que le pouvoir de restauration etudie par le fractionnement de la dose. Les electrons utilises ont un effet biologique moins grand que les rayons X de 180 keV (l'efficacite biologique relative - EBR - calculee sur la pente des courbes de survie est de 0.9 en presence d'air, 0.6 en presence d'azote)

  12. Electronically stimulated deep-center reactions in electron-irradiated InP: Comparison between experiment and recombination-enhancement theories

    International Nuclear Information System (INIS)

    Sibille, A.

    1987-01-01

    We present a detailed study of the recombination enhancement of several defect reactions involving the main deep centers in low-temperature electron-irradiated InP. A fairly good agreement is obtained with the Weeks-Tully-Kimerling theory for the activation energies of the enhanced process. On the other hand, a thorough investigation of a thermally and electronically stimulated defect transformation shows evidence that one major approximation (local vibrational equilibrium) fails, and that the recently proposed [H. Sumi, Phys. Rev. B 29, 4616 (1984)] mechanism of coherent recombination on deep centers is responsible for altered reaction rates at high injection levels

  13. In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

    Directory of Open Access Journals (Sweden)

    Takeshi Nagase

    2018-05-01

    Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

  14. Atomic hydrogen cleaning of GaAs photocathodes

    International Nuclear Information System (INIS)

    Poelker, M.; Price, J.; Sinclair, C.

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs

  15. 35-kV GaAs subnanosecond photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

    1990-12-01

    Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

  16. 35-kV GaAs subnanosecond photoconductive switches

    Science.gov (United States)

    Pocha, Michael D.; Druce, Robert L.

    1990-12-01

    High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

  17. GaAs strip detectors: the Australian production program

    International Nuclear Information System (INIS)

    Butcher, K.S.A.; Alexiev, D.

    1995-01-01

    The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

  18. Donor level of interstitial hydrogen in GaAs

    International Nuclear Information System (INIS)

    Dobaczewski, L.; Bonde Nielsen, K.; Nylandsted Larsen, A.; Peaker, A.R.

    2006-01-01

    The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14eV. Above 100K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs

  19. Microwave GaAs Integrated Circuits On Quartz Substrates

    Science.gov (United States)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  20. Status of fully integrated GaAs particle detectors

    International Nuclear Information System (INIS)

    Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

    1999-01-01

    GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

  1. EPR- study of paramagnetic features of brown coal from Kiyakty coal deposit after mechanic activation and electron irradiation

    International Nuclear Information System (INIS)

    Ryabikin, Yu.A.; Zashkvara, O.V.; Popov, S.N.; Kairbekov, Zh.K.; Ershova, Zh.R.; Kupchishin, A.I.; Kovtunets, V.A.

    2003-01-01

    Full text: It is known that prospected coal resources exceed, at least by order of magnitude, petroleum reserves decreasing steeply at last time as a result of world oil consumption rise. In this connection the manufacture of different liquid products from coal, especially brown coal, is issue of the day. Liquid fuel yield depends on physical-chemical characteristics and their changes owing to preliminary chemical, mechanical and radiation treatment. In this paper some results of paramagnetic characteristic study of Kiyakty deposit coal as initial one as after its mechanical treatment and electron irradiation are presented. It is discovered that in Kiyakty coal there are, at least, two fractions differed in EPR line width and concentration of free radical states they contained. First fraction has EPR line width ΔH 1 =4-5 Oe and mean free radical states concentration N 1 = 2.4·10 17 sp/g. For samples of second fraction the EPR line width ΔH 2 = 6.6-7.2 Oe and N 2 = 1.8·10 18 sp/g are typical. Thus, in the second fraction the EPR line width and free radical states concentration are greater than in the first case. Besides free radical states in coal EPR signals were found from trivalent iron ions with g-factor approximated 2 and with g=4.3. It the signals with g=4.3, are practically identical for both fractions, their concentrations are neighbour and line width is ΔH 1 = 250 Oe, then for the lines near g=2.0 situation is markedly different. For the first fraction ΔH 1 = 800 Oe whereas for the second case two signals in this g-factor range are observed. The first signal has line width ΔH 1 = 550 Oe and g=l .97, the second is more wide with ΔH 1 = 1000 Oe and g=2.02. We cannot discover significant dependence of free radical states concentration on mechanic activation time. Obviously, life times of complementary free radical states generated in process of coal activation are very low. As Fe 3+ ions, for both fractions it is observed intensity growth of their

  2. Temperature and intensity dependence of the performance of an electron-irradiated (AlGa)As/GaAs solar cell

    Science.gov (United States)

    Swartz, C. K.; Hart, R. E., Jr.

    1979-01-01

    The performance of a Hughes, liquid-phase epitaxial 2 centimeter-by-2 centimeter, (AlGa)As/GaAs solar cell was measured before and after irradiations with 1 MeV electrons to fluences of 1 x 10 to the 16th power electrons/sq cm. The temperature dependence of performance was measured over the temperature range 135 to 415 K at each fluence level. In addition, temperature dependences were measured at five intensity levels from 137 to 2.57 mW/sq cm before irradiation and after a fluence of 1 x 10 to the 16th power electrons/sq cm. For the intermediate fluences, performance was measured as a function of intensity at 298 K only.

  3. The effect of high energy electron irradiation on blood-brain barrier permeability to haloperidol and stobadin in rats

    Energy Technology Data Exchange (ETDEWEB)

    Trnovec, T; Kallay, Z [Komenskeho Univ., Bratislava (Czechoslovakia). Inst. of Preventive and Clinical Medicine; Volenec, K [Karlova Univ., Hradec Kralove (Czechoslovakia). Lekarska Fakulta; Bezek, S; Durisova, M; Scasnar, V; Kubu, M [Slovenska Akademia Vied, Bratislava (Czechoslovakia). Ustav Experimentalnej Farmakologie; Svoboda, V [Medical Academy J.E. Purkyne, Hradec Kralove (Czechoslovakia)

    1991-10-01

    The heads of rats were irradiated by 4 MeV electrons in doses 90, 180, and 360 Gy. The observed times of deaths ranged 120-600, 60-420, and 150-370 min after 90, 180, and 360 Gy, respectively. A dose dependent decrease of the brain uptake index of haloperidol was observed 1 and 3 h post radiation. On the other hand an increased brain uptake index was found for stobadin after head irradiation with doses of 180 and 360 Gy. Regional cerebral blood flow, blood pressure, and heart rate were not significantly altered in the period following irradiation with 180 Gy. The observed changes in blood-brain barrier (BBB) permeability seem to be the result of the damaged function of morphological structures forming the BBB rather than altered regional blood flow. (orig.).

  4. Trapping of self-interstitials at manganese atoms in electron-irradiated dilute AlMn alloys

    International Nuclear Information System (INIS)

    Bartels, A.; Dworschak, F.

    1985-01-01

    Dilute AlMn alloys were irradiated isothermally at different temperatures in stage II with 1.8 MeV electrons and the resistivity damage rates were measured as a function of the residual resistivity increase. The results demonstrate that Mn atoms provide deep traps at least up to 150 K for mobile interstitials. A quantitative evaluation of the data with respect to trapping radii is somewhat handicapped by the fact that the resistivity contribution of a Mn-Al interstitial complex was found to be considerably less than the sum of the resistivity contributions of an isolated solute Mn atom and an Al self-interstitial. The results can be explained by a model which assumes that both the trapping radius and the resistivity contribution of solute-self-interstitial complexes increase with the number of trapped interstitials. (author)

  5. Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

    2012-01-01

    The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

  6. RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

    International Nuclear Information System (INIS)

    Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

    1994-01-01

    The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

  7. Scanning microwave microscopy applied to semiconducting GaAs structures

    Science.gov (United States)

    Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

    2018-02-01

    A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

  8. Nuclear spin warm up in bulk n -GaAs

    Science.gov (United States)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  9. Performance of a GaAs electron source

    International Nuclear Information System (INIS)

    Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

    1994-01-01

    We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

  10. Transient radiation effects in GaAs semiconductor devices

    International Nuclear Information System (INIS)

    Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

    1988-01-01

    This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

  11. Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

    NARCIS (Netherlands)

    Gong, Q.; Nötzel, R.; Schönherr, H.-P.; Ploog, K.H.

    2002-01-01

    We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high

  12. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  13. Radiation effects in pigtailed GaAs and GaA1As LEDs

    International Nuclear Information System (INIS)

    Barnes, C.E.

    1981-06-01

    Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

  14. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO_2 using the induced and secondary current measurements

    International Nuclear Information System (INIS)

    Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

    2016-01-01

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO_2 achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO_2 is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10"1"0 s"−"1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  15. Effect of 6 MeV electrons on luminescence properties of Y{sub 2}O{sub 3}:Tb{sup 3+} nanophosphors

    Energy Technology Data Exchange (ETDEWEB)

    Sunitha, D.V., E-mail: sunithaprasad8@gmail.com [School of Physics, Reva University, Yelahanka, Bangalore 560064 (India); Nagabhushana, H. [Prof. C.N.R. Rao Centre for Advanced Materials Research, Tumkur University, Tumkur 572103 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-09-15

    Y{sub 2}O{sub 3}:Tb{sup 3+} nanophosphors were synthesized by solution combustion technique and irradiated with 6 MeV energetic electrons in the fluence range 2–10×10{sup 13} e{sup −}cm{sup −2}. Powder X-ray diffraction (PXRD) patterns confirm cubic phase of Y{sub 2}O{sub 3}. The crystallite size was estimated using Scherrer method and was found to be in the order of ~39 nm. SEM micrographs revealed the formation of non-uniform spherical shaped particles for higher electron fluence. Photoluminescence spectra (PL) of pristine and Tb{sup 3+} doped Y{sub 2}O{sub 3} were recorded in the fluence range 2–10×10{sup 13} e{sup −}cm{sup −2}. PL intensity was found to increase up to 4×10{sup 13} e{sup −}cm{sup −2} and thereafter it decreases with further increase in electron fluence. This may be attributed to lattice disorder produced by dense electronic excitation under electron irradiation. The characteristic emission peaks of Tb{sup 3+} were observed at ~ 484–490 nm ({sup 5}D{sub 4}→{sup 7}F{sub 6}), 548 nm ({sup 5}D{sub 4}→{sup 7}F{sub 5}) and 587 nm ({sup 5}D{sub 4}→{sup 7}F{sub 4}) at excited wavelength 397 nm. Two TL glow peaks were recorded in both pristine and electron irradiated samples indicate that two types of traps were created. The color co-ordinate values (x, y) were located in the green region of the CIE diagram suggests that electron irradiated Y{sub 2}O{sub 3}:Tb{sup 3+} phosphor could be used in white LEDs.

  16. Utilization of 5 MeV electron accelerator center and perspective

    International Nuclear Information System (INIS)

    Tanaka, Hiromi

    1990-01-01

    Electron beam process gives instantaneous effect as compared with heating process, and has such merits that energy consumption is very small, objects can be treated from outside, harmful chemicals are not used and treatment can be done as packed. The spread of electron beam process is largely due to the results of the development of highly reliable accelerators and utilization technologies, but as observed from all industrial fields, it is limited to only a part. In order to contribute to the solution of problems and the spread of electron beam process, Sumitomo Heavy Industries, Ltd. installed a 5 MeV, 200 kW large power accelerator developed by RDI in USA in the Electron Irradiation Application and Development Center opened in Tsukuba City. The Center was completed in June, 1989, and has carried out the activities of the development of irradiation utilization technologies, test irradiation and entrusted irradiation service. The features of electron beam process are high dose rate, the possibility of on and off as occasion demands, the preparation of radiation sources and the disposal of wastes being unnecessary, and no environmental problem. The industrialized processes, the types, energy and use of electron accelerators, the Tsukuba irradiation facilities and others are reported. (K.I.)

  17. Self-assembly of single "square" quantum rings in gold-free GaAs nanowires.

    Science.gov (United States)

    Zha, Guowei; Shang, Xiangjun; Su, Dan; Yu, Ying; Wei, Bin; Wang, Li; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Ji, Yuan; Sun, Baoquan; Niu, Zhichuan

    2014-03-21

    Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single "square" quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time. By tuning the deposition temperature, As overpressure and amount of gallium-droplets, we were able to control the density and morphology of the structure, yielding novel single quantum dots, QR, coupled QRs, and nano-antidots. A proposed model based on a strain-driven, transport-dependent nucleation of gallium droplets at high temperature accounts for the formation mechanism of these structures. We achieved a single-QR-in-NW structure, of which the optical properties were analyzed using micro-photoluminescence at 10 K and a spatially resolved cathodoluminescence technique at 77 K. The spectra show sharp discrete peaks; of these peaks, the narrowest linewidth (separation) was 578 μeV (1-3 meV), reflecting the quantized nature of the ring-type electronic states.

  18. The morphological effect of electron irradiation on the healing of skin wounds and skin grafts in the rat

    International Nuclear Information System (INIS)

    Wang, Q.

    1995-01-01

    Current oncological practice frequently uses pre-, intra- or post-operative radiotherapy/chemotherapy. Before such treatment can begin it is imperative to establish that satisfactory wound healing will occur. Many previous studies have examined the response of wound healing to ionizing and non-ionizing radiation. In general, clinical and experimental reports indicate that ionizing radiation produces poor to difficult healing of wounds, and can even prevent healing altogether. It is for this reason that the effect of radiation on wound repair has been a long standing concern for surgeons, radiotherapists and radiobiologists. Electron irradiation produces large differences in depth-dose distributions. This enables the delivery of a constant maximal dose throughout the superficial layer of tissue, for example, the total depth of skin, with less damage in deeper tissue layers, compared to that produced by the use of electromagnetic radiation such as X-rays. It is for this reason that electron beam irradiation has been selected as a radiation source for radiation of the graft bed. To date there have been few morphological examinations of the effect of electron radiation on the healing of skin wounds in rats. A review of the literature shows no information on the use of radiation of the graft bed in skin graft surgery. In the present work the processes involved in wound repair in response to radiation were studied, morphologically, using two experimental models, incisional wounds combined with pre-operative radiation and skin autografts combined with radiation of the wound bed. In the latter case an unirradiated skin graft was surgically attached to an irradiated wound bed. Light microscopy (LM), backscattered electron imaging (BEI), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used as investigative tools. These repair processes include inflammation, re-epithelialization, re-formation of the dermo-epidermal junction, re

  19. The morphological effect of electron irradiation on the healing of skin wounds and skin grafts in the rat

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q

    1995-07-01

    Current oncological practice frequently uses pre-, intra- or post-operative radiotherapy/chemotherapy. Before such treatment can begin it is imperative to establish that satisfactory wound healing will occur. Many previous studies have examined the response of wound healing to ionizing and non-ionizing radiation. In general, clinical and experimental reports indicate that ionizing radiation produces poor to difficult healing of wounds, and can even prevent healing altogether. It is for this reason that the effect of radiation on wound repair has been a long standing concern for surgeons, radiotherapists and radiobiologists. Electron irradiation produces large differences in depth-dose distributions. This enables the delivery of a constant maximal dose throughout the superficial layer of tissue, for example, the total depth of skin, with less damage in deeper tissue layers, compared to that produced by the use of electromagnetic radiation such as X-rays. It is for this reason that electron beam irradiation has been selected as a radiation source for radiation of the graft bed. To date there have been few morphological examinations of the effect of electron radiation on the healing of skin wounds in rats. A review of the literature shows no information on the use of radiation of the graft bed in skin graft surgery. In the present work the processes involved in wound repair in response to radiation were studied, morphologically, using two experimental models, incisional wounds combined with pre-operative radiation and skin autografts combined with radiation of the wound bed. In the latter case an unirradiated skin graft was surgically attached to an irradiated wound bed. Light microscopy (LM), backscattered electron imaging (BEI), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used as investigative tools. These repair processes include inflammation, re-epithelialization, re-formation of the dermo-epidermal junction, re

  20. Experimental Results for Direct Electron Irradiation of a Uranyl Sulfate Solution: Bubble Formation and Thermal Hydraulics Studies

    Energy Technology Data Exchange (ETDEWEB)

    Chemerisov, Sergey [Argonne National Lab. (ANL), Argonne, IL (United States); Gromov, R. [Argonne National Lab. (ANL), Argonne, IL (United States); Makarashvili, Vakhtang [Argonne National Lab. (ANL), Argonne, IL (United States); Heltemes, Thad [Argonne National Lab. (ANL), Argonne, IL (United States); Sun, Zaijing [Argonne National Lab. (ANL), Argonne, IL (United States); Wardle, Kent E. [Argonne National Lab. (ANL), Argonne, IL (United States); Bailey, James [Argonne National Lab. (ANL), Argonne, IL (United States); Stepinski, Dominique [Argonne National Lab. (ANL), Argonne, IL (United States); Jerden, James [Argonne National Lab. (ANL), Argonne, IL (United States); Vandegrift, George F. [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-01-30

    In support of the development of accelerator-driven production of fission product Mo-99 as proposed by SHINE Medical Technologies, a 35 MeV electron linac was used to irradiate depleted-uranium (DU) uranyl sulfate dissolved in pH 1 sulfuric acid at average power densities of 6 kW, 12 kW, and 15 kW. During these irradiations, gas bubbles were generated in the solution due to the radiolytic decomposition of water molecules in the solution. Multiple video cameras were used to record the behavior of bubble generation and transport in the solution. Seven six-channel thermocouples were used to record temperature gradients in the solution from self-heating. Measurements of hydrogen and oxygen concentrations in a helium sweep gas were recorded by a gas chromatograph to estimate production rates during irradiation. These data are being used to validate a computational fluid dynamics (CFD) model of the experiment that includes multiphase flow and a custom bubble injection model for the solution region.

  1. Experimental Results for Direct Electron Irradiation of a Uranyl Sulfate Solution: Bubble Formation and Thermal Hydraulics Studies

    International Nuclear Information System (INIS)

    Chemerisov, Sergey; Gromov, R.; Makarashvili, Vakhtang; Heltemes, Thad; Sun, Zaijing; Wardle, Kent E.; Bailey, James; Stepinski, Dominique; Jerden, James; Vandegrift, George F.

    2015-01-01

    In support of the development of accelerator-driven production of fission product Mo-99 as proposed by SHINE Medical Technologies, a 35 MeV electron linac was used to irradiate depleted-uranium (DU) uranyl sulfate dissolved in pH 1 sulfuric acid at average power densities of 6 kW, 12 kW, and 15 kW. During these irradiations, gas bubbles were generated in the solution due to the radiolytic decomposition of water molecules in the solution. Multiple video cameras were used to record the behavior of bubble generation and transport in the solution. Seven six-channel thermocouples were used to record temperature gradients in the solution from self-heating. Measurements of hydrogen and oxygen concentrations in a helium sweep gas were recorded by a gas chromatograph to estimate production rates during irradiation. These data are being used to validate a computational fluid dynamics (CFD) model of the experiment that includes multiphase flow and a custom bubble injection model for the solution region.

  2. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  3. Defects and related phenomena in electron irradiated ordered or disordered Fe-Co and Fe-Co-V alloys

    International Nuclear Information System (INIS)

    Riviere, J.P.; Dinhut, J.F.; Desarmot, G.

    1983-01-01

    Two B 2 type alloys Fe 50 at.%-Co 50 at.% and Fe 49 at.%-Co 49 at.%-V 2 at.% either in the ordered or the disordered state have been irradiated with 2.5 MeV electrons at liquid hydrogen temperature. The recovery of the resistivity damage was studied during subsequent isochronal annealing up to 700 K. The resistivity damage rates for both initially disordered Fe-Co and Fe-Co-V alloys are interpreted in terms of point defect production. The intrinsic resistivities rhosub(F) of Frenkel pairs and the effective recombination volumes V 0 are determined. In the Fe-Co ordered alloy point defect production superimposed with a disordering process can account for the resistivity damage. The effective displacement rate causing disordering is determined, indicating that replacement collisions are the dominant disordering mechanism. A calculation of the average number of replacements along directions per Frenkel pair is proposed. During the recovery of the radiation induced resistivity three main stages are observed in both ordered and disordered alloys. The particular resistivity behavior of the Fe-Co-V alloy complicates the interpretation of production and recovery data. (author)

  4. Femtosecond coherent emission from GaAs bulk microcavities

    Science.gov (United States)

    Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

    1999-02-01

    The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

  5. Superconductivity and its pressure variation in GaAs

    International Nuclear Information System (INIS)

    Nirmala Louis, C.; Jayam, Sr. Gerardin; Amalraj, A.

    2005-01-01

    The electronic band structure, metallization, phase transition and superconducting transition of gallium arsenide under pressure are studied using TB-LMTO method. Metallization occurs via indirect closing of band gap between Γ and X points. GaAs becomes superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The ground state properties are analyzed by fitting the calculated total energies to the Birch-Murnaghan's equation of state. The superconducting transition temperatures (T c ) obtained as a function of pressure for both the ZnS and NaCl structures and GaAs comes under the class of pressure induced superconductor. When pressure is increased T c increases in both the normal and high pressure structures. The dependence of T c on electron-phonon mass enhancement factor λ shows that GaAs is an electron-phonon-mediated superconductor. Also it is found that GaAs retained in their normal structure under high pressure give appreciably high T c . (author)

  6. Density-dependent electron scattering in photoexcited GaAs

    DEFF Research Database (Denmark)

    Mics, Zoltán; D'’Angio, Andrea; Jensen, Søren A.

    2013-01-01

    —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density...

  7. Picosecond relaxation of X-ray excited GaAs

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Lipp, V.; Ziaja, B.

    2017-01-01

    Roč. 24, Sep (2017), s. 15-21 ISSN 1574-1818 Institutional support: RVO:68378271 Keywords : GaAS * X-ray excitation * picosecond relaxation Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 0.908, year: 2016

  8. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  9. Design and Construction of Experiment for Direct Electron Irradiation of Uranyl Sulfate Solution: Bubble Formation and Thermal Hydraulics Studies

    Energy Technology Data Exchange (ETDEWEB)

    Chemerisov, Sergey [Argonne National Lab. (ANL), Argonne, IL (United States); Gromov, Roman [Argonne National Lab. (ANL), Argonne, IL (United States); Makarashvili, Vakho [Argonne National Lab. (ANL), Argonne, IL (United States); Heltemes, Thad [Argonne National Lab. (ANL), Argonne, IL (United States); Sun, Zaijing [Argonne National Lab. (ANL), Argonne, IL (United States); Wardle, Kent E. [Argonne National Lab. (ANL), Argonne, IL (United States); Bailey, James [Argonne National Lab. (ANL), Argonne, IL (United States); Quigley, Kevin [Argonne National Lab. (ANL), Argonne, IL (United States); Stepinski, Dominique [Argonne National Lab. (ANL), Argonne, IL (United States); Vandegrift, George [Argonne National Lab. (ANL), Argonne, IL (United States)

    2014-10-01

    Argonne is assisting SHINE Medical Technologies in developing SHINE, a system for producing fission-product 99Mo using a D/T-accelerator to produce fission in a non-critical target solution of aqueous uranyl sulfate. We have developed an experimental setup for studying thermal-hydraulics and bubble formation in the uranyl sulfate solution to simulate conditions expected in the SHINE target solution during irradiation. A direct electron beam from the linac accelerator will be used to irradiate a 20 L solution (sector of the solution vessel). Because the solution will undergo radiolytic decomposition, we will be able to study bubble formation and dynamics and effects of convection and temperature on bubble behavior. These experiments will serve as a verification/ validation tool for the thermal-hydraulic model. Utilization of the direct electron beam for irradiation allows homogeneous heating of a large solution volume and simplifies observation of the bubble dynamics simultaneously with thermal-hydraulic data collection, which will complement data collected during operation of the miniSHINE experiment. Irradiation will be conducted using a 30-40 MeV electron beam from the high-power linac accelerator. The total electron-beam power will be 20 kW, which will yield a power density on the order of 1 kW/L. The solution volume will be cooled on the front and back surfaces and central tube to mimic the geometry of the proposed SHINE solution vessel. Also, multiple thermocouples will be inserted into the solution vessel to map thermal profiles. The experimental design is now complete, and installation and testing are in progress.

  10. Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Stefan

    2012-07-01

    This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

  11. Positron studies in as received and electron irradiated YBa2Cu3O6.9, DyBa2Cu3O6.9 and CaSr2Bi2Cu2O8-δ

    International Nuclear Information System (INIS)

    Moser, P.; Henry, J.Y.

    1988-01-01

    The temperature dependence of the positron annihilation parameters is measured between 77K and 300K in different oxide superconductors before and after electron irradiation. Before irradiation a reproducible behaviour is observed in YBa 2 Cu 3 O 6.9 and DyBa 2 Cu 3 O 6.9 : a maximum of the positron lifetime and Doppler broadening is found at 150K suggesting that positrons are trapped in a well defined charged defect identified as the [Cu(1),nO] polyvacancy, with n=1 or 2. After electron irradiation, an increase in positron lifetime is found, which disappears by annealing between 100K and 500K

  12. Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

    International Nuclear Information System (INIS)

    Shu Haibo; Chen Xiaoshuang; Ding Zongling; Dong Ruibin; Lu Wei

    2010-01-01

    The mechanism of the preferential adsorption of Ga on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires is studied by using first-principles calculations within density functional theory. The calculated results show that Au preadsorption on GaAs(111)B surface significantly enhances the stability of the Ga adatom in comparison with the adsorption of Ga on clean GaAs(111)B surface. The stabilization of the Ga adatom is due to charge transfers from the Ga 4p and 4s states to the Au 6s and As 4p states. The number of Ga adatoms stabilized on GaAs(111)B surfaces depends on the size of surface Au cluster. The reason is that Au acted as an electron acceptor on GaAs(111)B surface assists the charge transfer of Ga adatoms for filling the partial unoccupied bands of GaAs(111)B surface. Our results are helpful to understand the growth of Au-assisted GaAs nanowires.

  13. Accumulation patterns of proper point defects in thermo-regulating coatings based on ZnO for space vehicles under electron irradiation

    International Nuclear Information System (INIS)

    Mikhajlov, M.M.; Sharafutdinova, V.V.

    1998-01-01

    The expansion of the band of the induced absorption of zinc oxide powders and thermo-regulating coatings based on ZnO for space vehicles is carried out after the 30 keV electron irradiation. Singularities of the growth of the intensity of individual components as a function of the accelerated electron flow are studied. It is found that power and exponential dependences with one or two components are characteristic for different color centers and different thermo-regulating coatings. The kinetics of the accumulation of free electrons is characterized by the maximum value of the electron flows at which the generation of color centers on pre-radiation defects is realized by the radiolysis of the pigment lattice

  14. Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: Defect transformation (H4-E11)→H4'

    International Nuclear Information System (INIS)

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1990-01-01

    Capacitance spectroscopy has been used to study the two dominant deep levels, H 4 and E 11 , produced in InP by low-energy electron irradiation. The annealing rates of H 4 and E 11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H 4 ' , which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H 4 and E 11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H 4 ' center

  15. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

    2000-01-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  16. Continuum model of tensile fracture of metal melts and its application to a problem of high-current electron irradiation of metals

    International Nuclear Information System (INIS)

    Mayer, Alexander E.; Mayer, Polina N.

    2015-01-01

    A continuum model of the metal melt fracture is formulated on the basis of the continuum mechanics and theory of metastable liquid. A character of temperature and strain rate dependences of the tensile strength that is predicted by the continuum model is verified, and parameters of the model are fitted with the use of the results of the molecular dynamics simulations for ultra-high strain rates (≥1–10/ns). A comparison with experimental data from literature is also presented for Al and Ni melts. Using the continuum model, the dynamic tensile strength of initially uniform melts of Al, Cu, Ni, Fe, Ti, and Pb within a wide range of strain rates (from 1–10/ms to 100/ns) and temperatures (from melting temperature up to 70–80% of critical temperature) is calculated. The model is applied to numerical investigation of a problem of the high-current electron irradiation of Al, Cu, and Fe targets

  17. The effect of alloying elements on the vacancy defect evolution in electron-irradiated austenitic Fe-Ni alloys studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Druzhkov, A.P. [Institute of Metal Physics, Ural Branch RAS, 18 Kovalevskaya St., 620041 Ekaterinburg (Russian Federation)], E-mail: druzhkov@imp.uran.ru; Perminov, D.A.; Davletshin, A.E. [Institute of Metal Physics, Ural Branch RAS, 18 Kovalevskaya St., 620041 Ekaterinburg (Russian Federation)

    2009-01-31

    The vacancy defect evolution under electron irradiation in austenitic Fe-34.2 wt% Ni alloys containing oversized (aluminum) and undersized (silicon) alloying elements was investigated by positron annihilation spectroscopy at temperatures between 300 and 573 K. It is found that the accumulation of vacancy defects is considerably suppressed in the silicon-doped alloy. This effect is observed at all the irradiation temperatures. The obtained results provide evidence that the silicon-doped alloy forms stable low-mobility clusters involving several Si and interstitial atoms, which are centers of the enhanced recombination of migrating vacancies. The clusters of Si-interstitial atoms also modify the annealing of vacancy defects in the Fe-Ni-Si alloy. The interaction between small vacancy agglomerates and solute Al atoms is observed in the Fe-Ni-Al alloy under irradiation at 300-423 K.

  18. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO{sub 2} using the induced and secondary current measurements

    Energy Technology Data Exchange (ETDEWEB)

    Said, K., E-mail: kamel.said@fss.rnu.tn [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Moya, G.; Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Damamme, G. [CEA, DAM, GRAMAT, 46500 Gramat (France); Kallel, A. [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia)

    2016-01-15

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO{sub 2} achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO{sub 2} is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10{sup 10} s{sup −1}) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  19. 8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

    Science.gov (United States)

    Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

    2018-06-01

    The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

  20. MICROSTRUCTURAL PARAMETERS IN 8 MeV ELECTRON‐IRRADIATED BOMBYX MORI SILK FIBERS BY Wide‐ANGLE X‐RAY SCATTERING STUDIES (WAXS)

    International Nuclear Information System (INIS)

    Sangappa,; Asha, S; Sanjeev, Ganesh; Subramanya, G; Parameswara, P; Somashekar, R

    2010-01-01

    The present work looks into the microstructural modification in electron irradiated Bombyx mori P31 silk fibers. The irradiation process was performed in air at room temperature using 8 MeV electron accelerator at different doses: 0, 25, 50 and 100 kGy. Irradiation of polymer is used to cross‐link or degrade the desired component or to fix the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been computed using wide angle X‐ray scattering (WAXS) data and employing line profile analysis (LPA) using Fourier transform technique of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of crystal size, lattice strain and enthalpy parameters.

  1. MICROSTRUCTURAL PARAMETERS IN 8 MeV ELECTRON‐IRRADIATED BOMBYX MORI SILK FIBERS BY Wide‐ANGLE X‐RAY SCATTERING STUDIES (WAXS)

    Energy Technology Data Exchange (ETDEWEB)

    Sangappa,, E-mail: sangappa@mangaloreuniversity.ac.in; Asha, S, E-mail: sangappa@mangaloreuniversity.ac.in [Department of Studies in Physics, Mangalore University, Mangalagangotri‐574 199 (India); Sanjeev, Ganesh, E-mail: sangappa@mangaloreuniversity.ac.in [Microtron Center, Mangalore University, Mangalagangotri‐574 199 (India); Subramanya, G, E-mail: sangappa@mangaloreuniversity.ac.in [Department of Studies in Sericulture, University of Mysore, Manasagangotri, Mysore‐570 006 (India); Parameswara, P, E-mail: sangappa@mangaloreuniversity.ac.in; Somashekar, R, E-mail: sangappa@mangaloreuniversity.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore‐570 006 (India)

    2010-01-05

    The present work looks into the microstructural modification in electron irradiated Bombyx mori P31 silk fibers. The irradiation process was performed in air at room temperature using 8 MeV electron accelerator at different doses: 0, 25, 50 and 100 kGy. Irradiation of polymer is used to cross‐link or degrade the desired component or to fix the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been computed using wide angle X‐ray scattering (WAXS) data and employing line profile analysis (LPA) using Fourier transform technique of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of crystal size, lattice strain and enthalpy parameters.

  2. Femtosecond pulsed laser ablation of GaAs

    International Nuclear Information System (INIS)

    Trelenberg, T.W.; Dinh, L.N.; Saw, C.K.; Stuart, B.C.; Balooch, M.

    2004-01-01

    The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed

  3. Evidence for two narrow pp resonances at 2020 MeV and 2200 MeV

    CERN Document Server

    Benkheiri, P; Bouquet, B; Briandet, P; D'Almagne, B; Dang-Vu, C; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Grossetête, B; Irwin, G; Jacholkowski, A; Lahellec, A; Nguyen, H; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Rumpf, M; Six, J; Thénard, J M; Treille, D; Volte, A; Yaffe, D; Yiou, T P; Yoshida, H

    1977-01-01

    From the study of the reaction pi /sup -/p to p/sub F/pp pi /sup -/ using a fast proton (p/sub F/) trigger device in the CERN Omega spectrometer, the authors find evidence for two narrow pp states produced mainly in association with a Delta degrees (1232) and a N degrees (1520). The statistical significance of each peak is greater than 6 standard deviations. Masses and natural widths of these resonances are respectively M/sub 1/=2020+or-3 MeV, Gamma /sub 1 /=24+or-12 MeV and M/sub 2/=2204+or-5 MeV, Gamma /sub 2/=16/sub -16 //sup +20/ MeV. The data are consistent with a small production of the narrow approximately 1935 MeV resonance already reported. Production cross sections for these new pp resonances are given. (8 refs).

  4. Positron acceleration to 200 MeV

    International Nuclear Information System (INIS)

    Leboutet, H.

    1983-01-01

    220 MeV is the energy that has to be obtained in routine operation. A standard 12m girder with SLED II can give 220 MeV minus a few percent due to not riding at the crest of the wave. In order to have the 200 MeV with only one girder, a klystron at full power all the time would be required - kept brand new. Then, for safety it is necessary to use two klystrons as designated in the SLC design. Having two klystrons gives freedom for the choice of the best arrangement. Since there will be excess rf power, it can be traded against higher gradient, shorter waveguides, larger apertures (lower shunt impedence)

  5. GaAs nanocrystals: Structure and vibrational properties

    International Nuclear Information System (INIS)

    Nayak, J.; Sahu, S.N.; Nozaki, S.

    2006-01-01

    GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in the range of 10-15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum

  6. Testing a GaAs cathode in SRF gun

    International Nuclear Information System (INIS)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-01-01

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10 -12 Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to ∼10 -9 Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating

  7. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  8. X-ray electron density distribution of GaAs

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    Using ten X-ray structure amplitudes of strong reflections and nine weak reflections both, the valence electron and the difference electron density distribution of GaAs, are calculated. The experimental data are corrected for anomalous dispersion using a bond charge model. The calculated plots are compared with up to now published band structure-based and semiempirically calculated density plots. Taking into account the experimental data of germanium, measured on the same absolute scale, the difference density between GaAs and Ge is calculated. This exhibits the charge transfer between both the f.c.c.-sublattices as well as both, the shift and the decrease of the bond charge, quite closely connected to the theoretical results published by Baur et al. (author)

  9. Spin transport anisotropy in (110)GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Odilon, D.D.C. Jr.; Rudolph, Joerg; Hey, Rudolf; Santos, Paulo V. [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Iikawa, Fernando [Universidade Estadual de Campinas, IFGW, Campinas SP (Brazil)

    2007-07-01

    Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs(110) quantum wells (QW) over distances exceeding 60{mu}m. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. The weak piezoelectric fields impart a non-vanishing average velocity to the carriers, allowing for the direct observation of the carrier momentum dependence of the spin polarization dynamics. While transport along [001] direction presents high in-plane spin relaxation rates, transport along [ anti 110] shows a much weaker external field dependence due to the non-vanishing internal magnetic field. We show that the anisotropy is an intrinsic property of the underling GaAs matrix, associated with the bulk inversion asymmetry contribution to the LS-coupling.

  10. Ion induced charge collection in GaAs MESFETs

    International Nuclear Information System (INIS)

    Campbell, A.; Knudson, A.; McMorrow, D.; Anderson, W.; Roussos, J.; Espy, S.; Buchner, S.; Kang, K.; Kerns, D.; Kerns, S.

    1989-01-01

    Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution

  11. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  12. Semi-insulating GaAs detectors of fast neutrons

    International Nuclear Information System (INIS)

    Sagatova, A.; Sedlackova, K.; Necas, V.; Zatko, B.; Dubecky, F.; Bohacek, P.

    2012-01-01

    The present work deals with the technology of HDPE neutron conversion layer application on the surface of semi-insulating (SI) GaAs detectors via developed polypropylene (PP) based glue. The influence of glue deposition on the electric properties of the detectors was studied as well as the ability of the detectors to register the fast neutrons from "2"3"9Pu-Be neutron source. (authors)

  13. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  14. Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

    Directory of Open Access Journals (Sweden)

    Warner Jeffrey H.

    2017-01-01

    Full Text Available GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD. The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

  15. Ab initio study of hot electrons in GaAs

    OpenAIRE

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

  16. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  17. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  18. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  19. Nitridation of porous GaAs by an ECR ammonia plasma

    International Nuclear Information System (INIS)

    Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

    2006-01-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

  20. Nitridation of porous GaAs by an ECR ammonia plasma

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

    2006-02-15

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  1. Nitridation of porous GaAs by an ECR ammonia plasma

    Science.gov (United States)

    Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

    2006-02-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  2. Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

    International Nuclear Information System (INIS)

    Ney, A; Harris, J S Jr; Parkin, S S P

    2006-01-01

    The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

  3. Effect of electron irradiation exposure on phase formation, microstructure and mechanical strength of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} superconductor prepared via co-precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Mohiju, Zaahidah ' Atiqah; Hamid, Nasri A., E-mail: Nasri@uniten.edu.my; Kannan, V. [Center for Nuclear Energy, College of Engineering, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, 43000 Kajang, Selangor (Malaysia); Abdullah, Yusof [Materials Technology Group, Industrial Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia)

    2015-04-29

    In this work the effect of electron irradiation on the mechanical properties of Bi2Sr2CaCu2O8 (Bi-2212) superconductor was studied by exposing the Bi-2212 superconductor with different doses of electron irradiation. Bi-2212 samples were prepared by using co-precipitation method. Irradiation was performed with irradiation dose of 100 kGray and 200 kGray, respectively. Characterization of the samples was performed by using X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Instron Universal Testing machine was used to measure the strength of the samples. The XRD patterns for the non-irradiated and irradiated samples show well-defined peaks of which could be indexed on the basis of a Bi-2212 phase structure. XRD patterns also indicate that electron irradiation did not affect the Bi-2212 superconducting phase. SEM micrographs show disorientation in the texture of the microstructure for irradiated samples. Sample exposed to 200 kGray electron irradiation dose shows enhancement of grain size. Their grain growth and texture improved slightly compared to other sample. The results also show that enlargement of grain size resulted in higher mechanical strength.

  4. MeV fullerene impacts on mica

    Energy Technology Data Exchange (ETDEWEB)

    Doebeli, M.; Scandella, L. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Ames, F. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Hillock heights on mica irradiated with MeV C{sub 60} ions have been investigated systematically. Results show that the small range of secondary particles along the track plays a crucial role in defect production. (author) figs., tab., refs.

  5. <600> MeV synchro-cyclotron

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    One of the 14 pancakes of the new magnet coils for the 600 MeV synchro-cyclotron which were wound and coated with epoxy resin on the CERN site. These new coils will replace the present ones which have been in use for more than 14 years but are now showing signs of deteriorations.

  6. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  7. The effect of diets containing pistachio by products treated with electron irradiation, NaOH, and PEG on nutrients digestibility and performance of finishing Zandi lambs

    Directory of Open Access Journals (Sweden)

    Masoud Moradi

    2016-04-01

    Full Text Available Introduction It has been estimated that PBP production based on fresh weight in Iran is over 400,000 MT annually. Pistachio by-products consist of 53.50% external hull (epicarp with the remaining composed of leaves, mesocarp and kernel. The results of few studies showed feeding of low levels of PBP had no effects on sheep, dairy cow and goat performance. Ensiled of PBP with PEG, NaOH and urea then treated by electron irradiation could be caused to better nutrition value via deactivation of tannins. The aim of this study was to survey the effect of diets containing pistachio by products treated by electron irradiation, NaOH, and PEG on nutrients digestibility and performance of finishing Zandi lambs. Materials and methods Twenty male Zandi lambs with the initial average body weight of 21±1.52 kg were housed in individual pens and were allocated to four dietary treatments in a completely randomized design for 70 days. The basal diet consisted of 220 g/kg DM PBP, 130 g/kg DM wheat straw and 650 g/kg DM barley based concentrate. The four dietary treatments included control diet (Treatment 1; basal diet containing 22% PB, ER-PBP (Treatment 2; containing 22% electron irradiated PBP, NaOH-PBP (Treatment 3; containing 22% NaOH treated PBP and PEG-PBP (Treatment 4; PEG added to basal diet as 15 g/kg of diets DM. Throughout the 70 d experiment, body weight was measured weekly. Feed intake and ort of lambs were recorded and sampled daily for determination of nutrient intake of DM, CP (N × 6.25, EE and NDF as describes before. Apparent total digestibility of nutrients was estimated by the marker ratio technique using acid insoluble ash (AIA as an internal marker. Blood samples (10 ml were taken from jugular vein of lambs before morning feeding on d 70 of experiment. The serum concentrations of total protein (TP, albumin, creatinine, glucose and urea were determined using commercial laboratory kits (Pars Azmun Laboratory, Tehran, Iran and an auto analyzer

  8. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  9. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F. [University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573 (Japan)

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerance of GaAs and that Ti can protected GaAs from erosion by NH{sub 3}. By depositing Ti on GaAs(111)A surface, a mirror-like GaN layer could be grown at 1000 C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Measurements of pp→π+d between 398 MeV and 572 MeV

    International Nuclear Information System (INIS)

    Aebischer, D.; Favier, B.; Greeniaus, L.G.; Hess, R.; Junod, A.; Lechanoine, C.; Nikles, J.-C.; Rapin, D.; Werren, D.W.

    1976-01-01

    The reaction pp→π + d was studied at incident proton energies of 398, 455, 497, 530 and 572 MeV. Measurements of dsigma/dΩ at 455 and 572 MeV show the presence of pion d-waves in the pion-deuteron system. Asymmetry measurements yield similar conclusions. Total cross-section measurements agree with recent fits to earlier data. (Auth.)

  11. Isotopic Anomalies in Organic Nanoglobules from Comet 81P/Wild 2: Comparison to Murchison Nanoglobules and Isotopic Anomalies Induced in Terrestrial Organics by Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    De Gregorio, B.; Stroud, R; Nittler, L; Alexander, C; Kilcoyne, A; Zega, T

    2010-01-01

    Nanoglobules are a form of organic matter found in interplanetary dust particles and primitive meteorites and are commonly associated with {sup 15}N and D isotopic anomalies that are suggestive of interstellar processes. We report the discovery of two isotopically-anomalous organic globules from the Stardust collection of particles from Comet 81P/Wild 2 and compare them with nanoglobules from the Murchison CM2 meteorite. One globule from Stardust Cometary Track 80 contains highly aromatic organic matter and a large {sup 15}N anomaly ({delta}{sup 15}N = 1120{per_thousand}). Associated, non-globular, organic matter from this track is less enriched in {sup 15}N and contains a mixture of aromatic and oxidized carbon similar to bulk insoluble organic material (IOM) from primitive meteorites. The second globule, from Cometary Track 2, contains non-aromatic organic matter with abundant nitrile ({single_bond}C{triple_bond}N) and carboxyl ({single_bond}COOH) functional groups. It is significantly enriched in D ({delta}D = 1000{per_thousand}) but has a terrestrial {sup 15}N/{sup 14}N ratio. Experiments indicate that similar D enrichments, unaccompanied by {sup 15}N fractionation, can be reproduced in the laboratory by electron irradiation of epoxy or cyanoacrylate. Thus, a terrestrial origin for this globule cannot be ruled out, and, conversely, exposure to high-energy electron irradiation in space may be an important factor in producing D anomalies in organic materials. For comparison, we report two Murchison globules: one with a large {sup 15}N enrichment and highly aromatic chemistry analogous to the Track 80 globule and the other only moderately enriched in {sup 15}N with IOM-like chemistry. The observation of organic globules in Comet 81P/Wild 2 indicates that comets likely sampled the same reservoirs of organic matter as did the chondrite parent bodies. The observed isotopic anomalies in the globules are most likely preserved signatures of low temperature (<10 K

  12. Isotopic anomalies in organic nanoglobules from Comet 81P/Wild 2: Comparison to Murchison nanoglobules and isotopic anomalies induced in terrestrial organics by electron irradiation

    Science.gov (United States)

    De Gregorio, Bradley T.; Stroud, Rhonda M.; Nittler, Larry R.; Alexander, Conel M. O.'D.; Kilcoyne, A. L. David; Zega, Thomas J.

    2010-08-01

    Nanoglobules are a form of organic matter found in interplanetary dust particles and primitive meteorites and are commonly associated with 15N and D isotopic anomalies that are suggestive of interstellar processes. We report the discovery of two isotopically-anomalous organic globules from the Stardust collection of particles from Comet 81P/Wild 2 and compare them with nanoglobules from the Murchison CM2 meteorite. One globule from Stardust Cometary Track 80 contains highly aromatic organic matter and a large 15N anomaly (δ 15N = 1120‰). Associated, non-globular, organic matter from this track is less enriched in 15N and contains a mixture of aromatic and oxidized carbon similar to bulk insoluble organic material (IOM) from primitive meteorites. The second globule, from Cometary Track 2, contains non-aromatic organic matter with abundant nitrile ( sbnd C tbnd N) and carboxyl ( sbnd COOH) functional groups. It is significantly enriched in D (δD = 1000‰) but has a terrestrial 15N/ 14N ratio. Experiments indicate that similar D enrichments, unaccompanied by 15N fractionation, can be reproduced in the laboratory by electron irradiation of epoxy or cyanoacrylate. Thus, a terrestrial origin for this globule cannot be ruled out, and, conversely, exposure to high-energy electron irradiation in space may be an important factor in producing D anomalies in organic materials. For comparison, we report two Murchison globules: one with a large 15N enrichment and highly aromatic chemistry analogous to the Track 80 globule and the other only moderately enriched in 15N with IOM-like chemistry. The observation of organic globules in Comet 81P/Wild 2 indicates that comets likely sampled the same reservoirs of organic matter as did the chondrite parent bodies. The observed isotopic anomalies in the globules are most likely preserved signatures of low temperature (<10 K) chemistry in the interstellar medium or perhaps the outer regions of the solar nebula. In other

  13. Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

    Science.gov (United States)

    Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2016-11-01

    This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

  14. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

  15. Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

    DEFF Research Database (Denmark)

    Marx, E.; Ginger, D.S.; Walzer, Karsten

    2002-01-01

    This letter reports the self-assembly and analysis of CdSe nanocrystal monolayers on both p- and a-doped GaAs substrates. The self-assembly was performed using a 1,6-hexanedithiol self-assembled monolayer (SAM) to link CdSe nanocrystals to GaAs substrates. Attenuated total reflection Fourier tran...

  16. Structure and homoepitaxial growth of GaAs(6 3 1)

    International Nuclear Information System (INIS)

    Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

    2006-01-01

    We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

  17. Understanding the formation and growth of Ag nanoparticles on silver chromate induced by electron irradiation in electron microscope: A combined experimental and theoretical study

    International Nuclear Information System (INIS)

    Fabbro, Maria T.; Gracia, Lourdes; Silva, Gabriela S.; Santos, Luís P.S.; Andrés, Juan; Cordoncillo, Eloisa; Longo, E.

    2016-01-01

    Ag 2 CrO 4 microcrystals were synthesized using the co-precipitation method. These microcrystals were characterized through X-ray diffraction (XRD) with Rietveld analysis, field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), micro-Raman (MR). XRD patterns and Rietveld refinement data showed that the material exhibits an orthorhombic structure without any deleterious phases. FE-SEM and TEM micrographs revealed the morphology and the growth of Ag nanoparticles on Ag 2 CrO 4 microcrystals during electron beam irradiation. These events were directly monitored in real-time. Their optical properties were investigated using ultraviolet-visible (UV–vis) diffuse reflectance spectroscopy that allowed the calculation of the optical band gap energy. Theoretical analyses based on the density functional theory level indicate that the incorporation of electrons is responsible for structural modifications and formation of defects on the [AgO 6 ] and [AgO 4 ] clusters, generating ideal conditions for the growth of Ag nanoparticles. - Graphical abstract: Theoretical representation of the Ag 2 CrO 4 orthorhombic structure. Display Omitted - Highlights: • The Ag 2 CrO 4 microcrystals indicate an orthorhombic structure. • The formation of Ag 0 promotes Ag-nanoparticle growth on the surface of the Ag 2 CrO 4 . • Electron irradiation of the material induces the formation of Ag vacancies.

  18. High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals

    International Nuclear Information System (INIS)

    Inui, H.; Mori, H.; Sakata, T.

    1992-01-01

    An electron-irradiation-induced crystalline-to-amorphous (CA) transition in α-SiC has been studied by high-resolution electron microscopy (HREM). The irradiation-produced damage structure was examined as a function of dose of electrons by taking high-resolution maps extending from the unirradiated crystalline region to the completely amorphized region. In the intermediate region between those two regions, that is in the CA transition region, the damage structure was essentially a mixture of crystalline and amorphous phases. The volume fraction of the amorphous phase was found to increase with increasing dose of electrons and no discrete crystalline-amorphous interface was observed in the CA transition region. These facts indicate the heterogeneous and gradual nature of the CA transition. In the transition region close to the unirradiated crystalline region, a sort of fragmentation of the crystal lattice was observed to occur, crystallites with slightly different orientations with respect to the parent crystal were formed owing to the strain around the dispersed local amorphous regions. In the transition region close to the amorphized region, these crystallites were reduced in size and were embedded in an amorphous matrix. This damage structure is the result of the increased volume fraction of the amorphous phase. In the completely amorphized region, no lattice fringes were recognized in the HREM images. The atomistic process of the CA transition is discussed on the basis of the present results and those from previous studies. (Author)

  19. Study of thermochemically reduced and electron-irradiated LiNbO3 single crystals by positron annihilation and optical absorption measurements

    International Nuclear Information System (INIS)

    Pareja, R.; Gonzalez, R.; Pedrosa, M.A.

    1984-01-01

    Irradiation of LiNbO 3 single crystals using Van de Graaff electrons with an energy of 1.5 MeV introduces an optical absorption band similar to that observed in thermochemically reduced samples. As-grown, reduced, or irradiated crystals show single-component positron lifetime spectra with an average decay time of 234 ps. (author)

  20. 14 MeV proton activation analysis

    International Nuclear Information System (INIS)

    Constantinescu, B.; Ivanov, E.; Plostinaru, D.; Popa-Nemoiu, A.; Pascovichi, G.

    1985-01-01

    A fast nuclear nondestructive method for protein analysis using the 14 MeV proton activation has been developed. The total nitrogen content was measured through the reaction: 14 N (p,n) 14 O, (Tsub(1/2)=71 s). The 14 O activity was detected by means of its characteristic 2.312 MeV gamma-ray line with a NaI(Tl) detector. For a fast determination of a large number of samples a mechanized sistem reacting a rate of one sample per minute has been developed. The laboratory electronics comprises a multichannel analyser, a PDP computer and an electronic module comtroller. Comparison of the results obtained by the method described and the classical Kjeldal technique for samples of various cereal grains (soya bean seads, wheat, barley and corn) showed good correlation. A problem of the analysis of the whole protein region on corn and soya-bean seads, where this region is thicker (0,2 - 2 mm), is mentioned. In this case flour was proposed to be used to obtain a protein homogeneous sample and the irradiaton dose for a sample was about 33,000 Gy, mainly (99%) from protons (27 s x 100 nA x 14 MeV)

  1. Amateurism in an Age of Professionalism: An Empirical Examination of an Irish Sporting Culture: The GAA

    Directory of Open Access Journals (Sweden)

    Ian Keeler

    2013-07-01

    This research study recommends that the GAA adopt an innovative approach, through strategic decision-making, to allow the GAA to maintain its amateur ethos, and, yet, successfully compete in the professional sporting market. The strong links with the community must be both nurtured and enhanced. The GAA and Gaelic games must embrace the challenges that the branding success of foreign sports has brought. Player welfare issues for the elite players must be addressed while continuing to protect the club and its amateur structures. The study looks at the key metrics that are required to evolve the GAA. This entails not only focusing on the perceived importance of the amateur ethos to the GAA, but also developing the marketing, branding and profiling of Gaelic games to enhance the performance of an amateur sporting organization in an era of increased professionalism in sport.

  2. High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing

    International Nuclear Information System (INIS)

    Menzel, F.; Spemann, D.; Butz, T.

    2011-01-01

    With proton beam writing (PBW) and subsequent electrochemical etching in HF-solution the creation of high-aspect ratio microstructures in p-type InP was performed for the first time. Microstructures with high surface quality as well as high-aspect ratio possessing lateral dimensions down to 1 μm were produced. Furthermore, free-standing microstructures were created in this material by a combined irradiation with 2.25 MeV protons and 1.125 MeV H 2 + molecules, were the smallest structure dimension of 0.6 μm was achieved for a horizontal needle. The creation of nearly perfect circular microstructures indicates that the crystal structure has little effect on the structuring process by PBW in this material. Moreover, the effect of reduced etching inside of closed irradiation patterns, already known from Si and GaAs, was observed also in InP. In further PBW experiments and subsequent electrochemical etching with KOH-solution p-type GaAs microstructures were produced. By using a 4-fold higher etch current density of 45 mA/cm 2 compared to former PBW experiments on this material the quality of the microstructures could be improved significantly leading to high aspect-ratio structures with minimum lateral sizes of ∼1 μm, nearly vertical side walls as well as circular microstructures. This shows the reduced influence of the crystal structure on the shape of the microstructures compared to experiments with lower etch current density where only flat microstructures with inclined side walls determined by the crystal structure could be created.

  3. Laser-induced bandgap collapse in GaAs

    Science.gov (United States)

    Siegal, Y.; Glezer, Eli N.; Huang, Li; Mazur, Eric

    1994-05-01

    We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

  4. Investigation of Optically Induced Avalanching in GaAs

    Science.gov (United States)

    1989-06-01

    by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

  5. Study of irradiation defects in GaAs

    International Nuclear Information System (INIS)

    Loualiche, S.

    1982-11-01

    Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

  6. Surface passivation of liquid phase epitaxial GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Mo, L.; Edmondson, M.

    1995-10-01

    Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P 2 S 5 -NH 4 OH, (NH 4 ) 2 S x and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH 4 ) 2 S x passivation also results in improved I-V characteristics, though the long term stability of this passivation is questionable. 26 refs., 6 figs

  7. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

    International Nuclear Information System (INIS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

    2000-01-01

    Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

  8. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    Science.gov (United States)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  9. Reduction of dose enhancement from backscattered radiation at tissue-metal interfaces irradiated with 6MeV electrons

    International Nuclear Information System (INIS)

    Steel, B.

    1996-01-01

    Due to Electron Back Scatter (EBS), electron irradiation of tissue having under lying lead shielding results in an increase in dose to the tissue on the entrance side of the lead. In these situations dose increases as high as 80% have been reported in the literature. Saunders (British Journal of Radiology, 47, 467-470) noted that dose enhancement is dependent on atomic number of the under lying material approximately as Z 0.5 , and it increases at lower incident electron energies. In our clinic we use 2mm of lead shielding to protect under lying normal tissue when 6MeV electrons are used to treat lips and ears. The object of this study was to find the thinnest combination of materials to reduce the total dose to an acceptable level, with the provisos that; the patient does not come into contact with the lead or other metals, the finished shield could comfortabley be placed between the patient's lip and teeth, and that the materials are sufficietly malleable to work into custom shields. Various combinations of dental wax and aluminium were trialed. That which proved to give the best compromise between reduction of EBS and total shielding thickness was, 1mm of aluminim on the beam side of the lead with 1mm of dental wax to completely enclose the shield. In practice the manufactured shields are approximately 6 mm thick, and are usually not uncomfortable for the patient. (author)

  10. Defects in hyperpure Fe-based alloys created by 3 MeV e{sup -}-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, X H; Moser, P [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, C [Electricite de France (EDF), 77 - Ecuelles (France)

    1994-12-31

    Information about vacancy defects created in RPV (Reactor Pressure Vessels) steels after neutron irradiations are obtained via a simulation: the RPV steels are simulated by a series of high purity Fe-based alloys; the neutron irradiation is simulated by a 3 MeV electron irradiation; vacancy defects characteristics are obtained by positron lifetime techniques. Irradiations are made at 150 or 288 deg C, with a dose of 4*10{sup 19} e-/cm{sup 2}, and followed by isochronal annealing in the range 20-500 deg C. The observed vacancy defects are single trapped vacancies and small vacancy clusters, the size of which being lower than 10 empty atomic volumes (vacancy clusters containing more than 50 empty atomic volumes were never found). A large recovery step is observed between 200 and 400 deg C, after 150 deg C irradiation and attributed to vacancy-impurity detrapping, and also, vacancy cluster evaporation. The influence of C, Cu and Mo are presented. These results are in agreement with a model supposing, in pure Fe, single vacancy migration at -50 deg C and vacancy-impurity detrapping at 200 deg C. (authors). 4 figs., 15 refs.

  11. Radiation-induced damage and recovery effects in GG17 glass irradiated by 1 MeV electrons

    International Nuclear Information System (INIS)

    Wang Qingyan; Zhang Zhonghua; Geng Hongbin; Sun Chengyue; Yang Dezhuang; He Shiyu; Hu Zhaochu

    2012-01-01

    The optical properties and microstructural damage of GG17 glasses, as well as their recovery during annealing at room temperature, are investigated after exposure to 1 MeV electrons with various fluences. Experimental results show that the electrons lead to severe optical degradation in the GG17 glass, and induce the formation of paramagnetic defects which can be mainly attributed to the boron–oxygen hole centers. With increasing annealing time at room temperature their decay serves as long-lived defects following first order kinetics. Except for the strong absorption bands located at 334–352 nm and 480 nm that corresponds to the boron–oxygen hole centers, weaker absorption bands appear at 780 nm or 794.6 nm after irradiation, inducing a decrease in transmittance by approximately 17% for a fluence of 1 × 10 16 cm −2 . It is shown that electron irradiation could cause a harmful effect on rubidium lamps when GG17 glass is used as the lamp envelope material.

  12. Subnanosecond, high voltage photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  13. Subnanosecond, high-voltage photoconductive switching in GaAs

    Science.gov (United States)

    Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

    1991-03-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

  14. Low-energy particle treatment of GaAs surface

    International Nuclear Information System (INIS)

    Pincik, E.; Ivanco, J.; Brunner, R.; Jergel, M.; Falcony, C.; Ortega, L.; Kucera, J. M.

    2002-01-01

    The paper presents results of a complex study of surface properties of high-doped (2x10 18 cm -3 ) and semi-insulating GaAs after an interaction with the particles coming from low-energy ion sources such as RF plasma and ion beams. The virgin samples were mechano-chemically polished liquid-encapsulated Czochralski-grown GaAs (100) oriented wafers. The crystals were mounted on the grounded electrode (holder). The mixture Ar+H 2 as well as O 2 and CF 4 were used as working gases: In addition, a combination of two different in-situ exposures was applied, such as e.g. hydrogen and oxygen. Structural, electrical and optical properties of the exposed surfaces were investigated using X-ray diffraction at grazing incidence, quasi-static and high-frequency C-V curve measurements, deep-level transient spectroscopy, photo-reflectance, and photoluminescence. Plasma and ion beam exposures were performed in a commercial RF capacitively coupled plasma equipment SECON XPL-200P and a commercial LPAI device, respectively. The evolution of surface properties as a function of the pressure of working gas and the duration of exposure was observed. (Authors)

  15. Sn nanothreads in GaAs: experiment and simulation

    Science.gov (United States)

    Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2016-12-01

    The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

  16. X-ray imaging bilinear staggered GaAs detectors

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A.; Dvoryankin, V.F. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A

    2004-09-21

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 {mu}A min/(Gy cm{sup 2}). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received.

  17. X-ray imaging bilinear staggered GaAs detectors

    International Nuclear Information System (INIS)

    Achmadullin, R.A.; Dvoryankin, V.F.; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A.

    2004-01-01

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 μA min/(Gy cm 2 ). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received

  18. Bismuth alloying properties in GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lu [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Cao, Huawei; Cai, Ningning; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  19. SXPS study of model GaAs(100)/electrolyte interface

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Mikhail V. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation); Mankel, Eric; Mayer, Thomas; Jaegermann, Wolfram [Institute of Material Sciences, Darmstadt University of Technology, Darmstadt (Germany)

    2010-02-15

    Model GaAs(100)/electrolyte interfaces are prepared in vacuum by co-adsorption of Cl{sub 2} and 2-propanol molecules at LN{sub 2} temperature. On adsorption of Cl{sub 2} molecules gallium chlorides, elemental arsenic and arsenic chlorides are formed. Co-adsorption of 2-propanol causes formation of additional GaCl{sub 3} and AsCl, as well as soluble/volatile As-based complexes, which are released from the surface depleting the sur- face by arsenic. Comparison of the As 3d and Ga 3d spectra obtained after heating the model interface to room temperature with the corresponding spectra obtained after emersion of the GaAs(100) surface from HCl/2-propanol solution allows to conclude that in HCl solution Cl{sup -} ions attack gallium sites and H{sup +} ions mostly attack arsenic sites. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Influence of continuous electron irradiation and different modes of mechanic-thermal treatment on structure-phase composition of alloys 36NKhTYu and 40KhNYu

    International Nuclear Information System (INIS)

    Alontseva, D.L.; Suslov, S.E.; Kupchishin, A.I.; Plotnikov, S.V.; Petrov, V.A.

    2002-01-01

    Principal regularities of structure formation in strongly deformed alloys 36NKhTYu and 40KhNYu under aging in certain temperature range and after electron irradiation are revealed. Morphological features of precipitating phases with purpose of development of methods for getting of optimal structural states providing essential properties rate were determined. Data of electron microscopic examinations of structure-phase composition are compared with data on mechanical properties

  1. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  2. NH (X 3 summation -, v=1--3) formation and vibrational relaxation in electron-irradiated Ar/N2/H2 mixtures

    International Nuclear Information System (INIS)

    Dodd, J.A.; Lipson, S.J.; Flanagan, D.J.; Blumberg, W.A.M.; Person, J.C.; Green, B.D.

    1991-01-01

    Measurements of the dynamics of NH(X 3 summation - , v =1--3), created in electron-irradiated N 2 /H 2 and Ar/N 2 /H 2 mixtures, have been performed. Time-resolved Fourier spectroscopy was used to observe NH(v→v--1) vibrational fundamental band emission. Time-dependent populations were then determined by spectral fitting. Subsequent kinetic fitting of these populations using a single-quantum relaxation model and a power-law dependence of k v on v yielded the following NH(v =1--3) relaxation rate constants (units of 10 -14 cm 3 s -1 ): k v=1 (N 2 )=1.2±0.5, k v=2 (N 2 )=3.8±1.5, k v=3 (N 2 )=7.5±2.5; k v=1 (Ar)=0.2±0.1, k v=2 (Ar)=0.5±0.2, k v=3 (Ar)=0.8±0.3; k v=1 (H 2 )≤50, k v=2 (H 2 )≤100, k v=3 (H 2 )≤150. In addition, the N 2 /H 2 data provided a measurement of the nascent excited vibrational state distribution resulting from the reaction N( 2 D)+H 2 →NH(X,v)+H. The ratio NH(1):NH(2):NH(3) was found to be 1.0:0.97:0.81 (±0.28 in each value). Comparison of the observed nascent distribution with that of a statistical model suggests that the ratio NH(0):NH(1)=0.47. Using this derived distribution, we find the average product level left-angle v right-angle =1.6, and the fraction of the available product energy in vibration left-angle f v right-angle =0.44

  3. Fat Necrosis After Partial-Breast Irradiation With Brachytherapy or Electron Irradiation Versus Standard Whole-Breast Radiotherapy-4-Year Results of a Randomized Trial

    International Nuclear Information System (INIS)

    Loevey, Katalin; Fodor, Janos; Major, Tibor; Szabo, Eva; Orosz, Zsolt; Sulyok, Zoltan; Janvary, Levente; Froehlich, Georgina; Kasler, Miklos; Polgar, Csaba

    2007-01-01

    Purpose: To examine the incidence and clinical relevance of fat necrosis after accelerated partial-breast irradiation (PBI) using interstitial high-dose-rate brachytherapy (HDR-BT) in comparison with partial-breast electron irradiation (ELE) and whole-breast irradiation (WBI). Methods and Materials: Between 1998 and 2004, 258 early-stage breast cancer patients were randomized to receive 50 Gy WBI (n = 130) or PBI (n = 128). The latter consisted of either 7 x 5.2 Gy HDR-BT (n = 88) or 50 Gy ELE (n = 40). The incidence of fat necrosis, its impact on cosmetic outcome, accompanying radiologic features, and clinical symptoms were evaluated. Results: The 4-year actuarial rate of fat necrosis was 31.1% for all patients, and 31.9%, 36.5%, and 17.7% after WBI, HDR-BT and ELE, respectively (p WBI/HDR-BT = 0.26; p WBI/ELE = 0.11; p ELE/HDR-BT = 0.025). The respective rate of asymptomatic fat necrosis was 20.2%, 25.3%, and 10% of patients. The incidence of symptomatic fat necrosis was not significantly different after WBI (8.5%), HDR-BT (11.4%), and ELE (7.5%). Symptomatic fat necrosis was significantly associated with a worse cosmetic outcome, whereas asymptomatic fat necrosis was not. Fat necrosis was detectable with mammography and/or ultrasound in each case. Additional imaging examinations were required in 21% of cases and aspiration cytology in 42%. Conclusions: Asymptomatic fat necrosis is a common adverse event of breast-conserving therapy, having no significant clinical relevance in the majority of the cases. The incidence of both symptomatic and asymptomatic fat necrosis is similar after conventional WBI and accelerated partial-breast HDR-BT

  4. Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Huo, Dayun; Guo, Xiaoxiang; Rong, Chen; Shi, Zhenwu, E-mail: zwshi@suda.edu.cn; Peng, Changsi, E-mail: changsipeng@suda.edu.cn

    2016-01-01

    Graphical abstract: - Highlights: • Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields. • Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces. • Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed. • Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results. - Abstract: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.

  5. STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

    Science.gov (United States)

    Lee, Donghun; Daughton, David; Gupta, Jay

    2009-03-01

    Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

  6. Stage I/sub E/ recovery of electron-irradiated pure silver and of its dilute alloys with cadmium and indium

    International Nuclear Information System (INIS)

    Rizk, R.; Vajda, P.; Maury, F.; Lucasson, A.; Lucasson, P.

    1977-01-01

    Irradiations of silver specimens with electrons in the energy range 0.4--1.7 MeV were performed at liquid-helium temperatures. A subthreshold phenomenon has been observed which is taking over below approx. 750 keV. After separation of this effect, we have studied the annealing spectra of pure silver and of AgCd (25 and 50 ppm Cd) and AgIn (15 and 50 ppm In) diluted alloys following irradiation with different doses of 1.7-MeV electrons and after irradiation doping. The stage I/sub E/ recovery has been analyzed in terms of the chemical reaction rate theory. The corresponding rate equations have been solved numerically, and and the following values for the capture radii of a silver self-interstitial atom by a Cd and an In impurity were obtained: r/sub Cd//sup Ag/ = 0.15r/sub v/, r/sub In//sup Ag/ = (0.05--0.10) r/sub v/, where r/sub v/ is its annihilation radius at a vacancy. The best fit was obtained with a value of E/sub m/ = 88 meV for the migration energy of a self-interstitial

  7. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  8. Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

  9. The 200 MeV cyclotron facility

    International Nuclear Information System (INIS)

    1987-01-01

    Beams of protons with several different energies have now been successfully transported between the injector cyclotron SPC1 and the SSC. Some small modifications to the placement of steering magnets and diagnostic equipment have been made in the light of our operational experience, which should improve the ease of tuning this beamline. Proton beams up to 200 MeV in energy have been transported to the experimental areas, where experiments in nuclear physics have been successful conducted. Three of the experimental beamlines are now in operation. Beams of 66 MeV protons have also been transported to targets in the isotope production vault, without difficulty. Field mapping of the remaining quadrupoles on site has been completed. Installation of and alignment of magnets up to the beam swinger is also complete, although the beam tube itself, plus vacuum and diagnostic equipment must still be tackled. The beam swinger has been designed and detailed in the drawing office, and is now being manufactured locally. The beamline elements for the sepctrometer beamline remain to be purchased. A personal computer has been purchased for controlling the field-mapping equipment for the spectrometer magnets, which are being manufactured in this country. A number of computer programs have been written for conversion of calibrated quadrupole and dipole magnet field data to absolute current values for the control system. Other programs permit diagnostic measurements of beam profiles to be used to calculated the beam emittance, or to set steering magnets so that the beam is correctly aligned

  10. HIGH ENERGY RADIOGRAPHY-1-30 Mev

    Energy Technology Data Exchange (ETDEWEB)

    Bly, James H.

    1963-10-15

    From 1963 American Society of Metals/Materials Show, Cleveland, Oct. 1963. A survey of the field of radiographic inspection of thick sections, at one million volts energy or more, shows that this field has become a major branch of radiographic testing. More than a dozen models of x-ray generators are now commercially available in this field, over the range from 1 to 31 Mev, with outputs up to more than two orders of magnitude greater than can be obtained from radiographic isotope sources, and with smaller spot size. A study of the radiographic characteristics of x rays in this region shows that energies available cover the range of minimum absorption and scattering for most materials and approach this range for solid propellant; at higher energies severe coverage restrictions are imposed; output powers on small spots are near the limits of present target technology. It would appear that some degree of technological maturity'' has been achieved. Radiographic technique at 1 to 30 Mev is straightforward, following the same basic principles as in conventional radiography. Specialized aspects of technique are individually discussed. The wellknown 1 and 2 million volt equlpments are supplemented by a wide variety of higher-energy machines, with energy and output ratings to satisfy almost any radiographic need. Some examples are epitomized, and a brief discussion of possible future developments is presented. (auth)

  11. Study of the /sup 12/N 2. 43 MeV level. [Differential cross sections; 44 MeV /sup 3/He; 52 MeV p

    Energy Technology Data Exchange (ETDEWEB)

    Cecil, F E; Shepard, J R; Sercely, R R; Peterson, R J [Colorado Univ., Boulder (USA). Nuclear Physics Lab.; King, N S.P. [California Univ., Davis (USA). Crocker Nuclear Lab.

    1976-10-11

    The differential cross sections have been measured for the reactions /sup 12/C(/sup 3/He, /sup 3/He')/sup 12/C(17.77 MeV 0/sup +/ T = 1) and /sup 12/C(/sup 3/He, t)/sup 12/N(2.43 MeV) at Esub(/sup 3/He) = 44 MeV. The similar shapes of the angular distributions and the relative magnitudes of the cross sections suggest that the /sup 12/N 2.43 MeV level is the 0/sup +/ T = 1 analog to the /sup 12/C 17.77 MeV level. The reaction /sup 14/N(p, t)/sup 12/N(2.43 MeV) at Esub(p) = 52 MeV is also studied. The strength with which this level is excited in this reaction is consistent with reasonable two-step calculations assuming the 2.43 MeV level to have Jsup(..pi..) = 0/sup +/.

  12. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    Science.gov (United States)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  13. Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Fedorov A

    2010-01-01

    Full Text Available Abstract We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

  14. Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

    Science.gov (United States)

    1995-10-05

    improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

  15. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    Science.gov (United States)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  16. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2017-01-15

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

  17. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  18. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  19. Improvements of MCT MBE Growth on GaAs

    Science.gov (United States)

    Ziegler, J.; Wenisch, J.; Breiter, R.; Eich, D.; Figgemeier, H.; Fries, P.; Lutz, H.; Wollrab, R.

    2014-08-01

    In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15- μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature ( T OP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current-voltage ( IV) characteristics on test diodes in a MWIR FPA.

  20. Self-healing in fractured GaAs nanowires

    International Nuclear Information System (INIS)

    Wang Jun; Lu Chunsheng; Wang Qi; Xiao Pan; Ke Fujiu; Bai Yilong; Shen Yaogen; Wang Yanbo; Chen Bin; Liao Xiaozhou; Gao Huajian

    2012-01-01

    Molecular dynamics simulations are performed to investigate a spontaneous self-healing process in fractured GaAs nanowires with a zinc blende structure. The results show that such self-healing can indeed occur via rebonding of Ga and As atoms across the fracture surfaces, but it can be strongly influenced by several factors, including wire size, number of healing cycles, temperature, fracture morphology, oriented attachment and atomic diffusion. For example, it is found that the self-healing capacity is reduced by 46% as the lateral dimension of the wire increases from 2.3 to 9.2 nm, and by 64% after 24 repeated cycles of fracture and healing. Other factors influencing the self-healing behavior are also discussed.