Counseling Spanish-speaking patients: Atlanta pharmacists' cultural sensitivity, use of language-assistance services, and attitudes.

Science.gov (United States)

Muzyk, Andrew J; Muzyk, Tara L; Barnett, Candace W

2004-01-01

To document the types of language-assistance services available in pharmacies and the perceptions of pharmacists regarding the effectiveness of these services, and to measure the attitudes toward counseling Spanish-speaking patients and cultural sensitivity of pharmacists. Cross-sectional assessment. Metropolitan Atlanta, Ga. Registered Georgia pharmacists residing in metropolitan Atlanta. Mailed survey, with repeat mailing 2 weeks later. 38 survey items measuring demographic and practice-site characteristics, types of language-assistance services available with an assessment of the effectiveness of each measured on a nominal scale, and attitudinal items concerning counseling of Spanish-speaking patients and pharmacists' cultural sensitivity using a 5-point Likert-type response scale. Of 1,975 questionnaires mailed, 608 were returned, a 30.8% response rate. Nearly two thirds of the pharmacists had recently counseled a Spanish-speaking patient, but only one fourth of those respondents considered their interactions effective. Nearly all pharmacists, 88.0%, worked in pharmacies with language-assistance services. Of seven types of these services, a mean of 2.19 were available in pharmacies, and the majority of pharmacists (84.4% or more) identifying a service considered it to be effective. The pharmacists were neutral about counseling Spanish-speaking patients (mean = 2.94) and indifferent toward other cultures (mean = 3.28); however, they agreed they had a responsibility to counsel Spanish-speaking patients, and they believed that use of language-assistance services would constitute a reasonable effort to counsel these patients. Pharmacists have an opportunity to address barriers to communication with the Spanish-speaking population through use of language-assistance services and educational measures within the profession.

Fight or Flight? Immigration, Competition, and Language Assistance Resources in Metropolitan Atlanta

Science.gov (United States)

Tarasawa, Beth

2013-01-01

As the Latino/a immigrant population increases, racial conflict historically understood in terms of Black and White in the U.S. South has expanded to include new contestants in metro-Atlanta public schools. By examining market and sociological competition theoretical perspectives, this study investigates how language assistance resource…

Racial disparities in travel time to radiotherapy facilities in the Atlanta metropolitan area.

Science.gov (United States)

Peipins, Lucy A; Graham, Shannon; Young, Randall; Lewis, Brian; Flanagan, Barry

2013-07-01

Low-income women with breast cancer who rely on public transportation may have difficulty in completing recommended radiation therapy due to inadequate access to radiation facilities. Using a geographic information system (GIS) and network analysis we quantified spatial accessibility to radiation treatment facilities in the Atlanta, Georgia metropolitan area. We built a transportation network model that included all bus and rail routes and stops, system transfers and walk and wait times experienced by public transportation system travelers. We also built a private transportation network to model travel times by automobile. We calculated travel times to radiation therapy facilities via public and private transportation from a population-weighted center of each census tract located within the study area. We broadly grouped the tracts by low, medium and high household access to a private vehicle and by race. Facility service areas were created using the network model to map the extent of areal coverage at specified travel times (30, 45 and 60 min) for both public and private modes of transportation. The median public transportation travel time to the nearest radiotherapy facility was 56 min vs. approximately 8 min by private vehicle. We found that majority black census tracts had longer public transportation travel times than white tracts across all categories of vehicle access and that 39% of women in the study area had longer than 1 h of public transportation travel time to the nearest facility. In addition, service area analyses identified locations where the travel time barriers are the greatest. Spatial inaccessibility, especially for women who must use public transportation, is one of the barriers they face in receiving optimal treatment. Published by Elsevier Ltd.

Urban expansion simulation and the spatio-temporal changes of ecosystem services, a case study in Atlanta Metropolitan area, USA.

Science.gov (United States)

Sun, Xiao; Crittenden, John C; Li, Feng; Lu, Zhongming; Dou, Xiaolin

2018-05-01

Urban expansion can lead to land use changes and, hence, threatens the ecosystems. Understanding the effects of urbanization on ecosystem services (ESs) can provide scientific guidance for land use planning and the protection of ESs. We established a framework to assess the spatial distributions of ESs based on land use changes in the Atlanta Metropolitan area (AMA) from 1985 to 2012. A new comprehensive ecosystem service (CES) index was developed to reflect the comprehensive level of ESs. Associated with the influential factors, we simulated the business as usual scenario in 2030. Four alternative scenarios, including more compact growth (MCG), riparian vegetation buffer (RVB), soil conservation (SC), and combined development (CD) scenarios were developed to explore the optimal land use strategies which can enhance the ESs. The results showed that forest and wetland had the greatest decreases, while low and high intensity built-up lands had the greatest increases. The values of CES and most of ESs decreased significantly due to the sprawling expansion of built-up land. The scenario analysis revealed that the CD scenario performs best in CES value, while it performs the worst in food supply. Compared with the RVB and SC scenarios, MCG scenario is a more optimal land use strategy to enhance the ESs without at the expense of food supply. To integrate multiple ESs into land use planning and decision making, corresponding land management policies and ecological engineering measures should be implemented to enhance: (1) the water yield and water purification in urban core counties, (2) the carbon storage, habitat quality, and recreational opportunity in counties around the core area, and (3) the soil conservation and food supply in surrounding suburban counties. The land use strategies and ecological engineering measures in this study can provide references for enhancing the ESs in the AMA and other metropolitan areas. Copyright © 2017 Elsevier B.V. All rights reserved.

Trends in cytogenetic testing and identification of chromosomal abnormalities among pregnancies and children with birth defects, metropolitan Atlanta, 1968-2005.

Science.gov (United States)

Jackson, Jodi M; Crider, Krista S; Rasmussen, Sonja A; Cragan, Janet D; Olney, Richard S

2012-01-01

The purpose of this study was to examine changes in the use of cytogenetic testing and identification of chromosomal abnormalities among pregnancies and children with birth defects. Utilizing data from 1968 to 2005 from the Metropolitan Atlanta Congenital Defects Program, we analyzed trends in the frequency and timing (prenatal or postnatal) of cytogenetic testing and the prevalence of recognized chromosome abnormalities among pregnancies and children with birth defects (n = 51,424). Cytogenetic testing of pregnancies and children with birth defects increased from 7.2% in 1968 to 25.0% in 2005, as did the identification of chromosomal abnormalities (2.2% in 1968 to 6.8% in 2005). The use of prenatal cytogenetic testing decreased from 1996 to 2005 among women aged ≥35 years. Identification of chromosomal abnormalities in pregnancies and children with birth defects increased from 1968 to 2005, possibly due to increased testing, improved diagnostic techniques, or increasing maternal age. The decline in prenatal cytogenetic testing observed among mothers aged ≥35 years may be related to the availability of improved prenatal screening techniques, resulting in a reduction in the utilization of invasive diagnostic tests. Published 2011 Wiley Periodicals, Inc. This article is a U.S. Government work and is in the public domain in the USA.

Risk Factors for HIV Transmission and Barriers to HIV Disclosure: Metropolitan Atlanta Youth Perspectives.

Science.gov (United States)

Camacho-Gonzalez, Andres F; Wallins, Amy; Toledo, Lauren; Murray, Ashley; Gaul, Zaneta; Sutton, Madeline Y; Gillespie, Scott; Leong, Traci; Graves, Chanda; Chakraborty, Rana

2016-01-01

Youth carry the highest incidence of HIV infection in the United States. Understanding adolescent and young adult (AYA) perspectives on HIV transmission risk is important for targeted HIV prevention. We conducted a mixed methods study with HIV-infected and uninfected youth, ages 18-24 years, from Atlanta, GA. We provided self-administered surveys to HIV-infected and HIV-uninfected AYAs to identify risk factors for HIV acquisition. By means of computer-assisted thematic analyses, we examined transcribed focus group responses on HIV education, contributors to HIV transmission, and pre-sex HIV status disclosure. The 68 participants had the following characteristics: mean age 21.5 years (standard deviation: 1.8 years), 85% male, 90% black, 68% HIV-infected. HIV risk behaviors included the perception of condomless sex (Likert scale mean: 8.0) and transactional sex (88% of participants); no differences were noted by HIV status. Qualitative analyses revealed two main themes: (1) HIV risk factors among AYAs, and (2) barriers to discussing HIV status before sex. Participants felt the use of social media, need for immediate gratification, and lack of concern about HIV disease were risk factors for AYAs. Discussing HIV status with sex partners was uncommon. Key reasons included: fear of rejection, lack of confidentiality, discussion was unnecessary in temporary relationships, and disclosure negatively affecting the mood. HIV prevention strategies for AYAs should include improving condom use frequency and HIV disclosure skills, responsible utilization of social media, and education addressing HIV prevention including the risks of transactional sex.

Characterization of CCN and IN activity of bacterial isolates collected in Atlanta, GA

Science.gov (United States)

Purdue, Sara; Waters, Samantha; Karthikeyan, Smruthi; Konstantinidis, Kostas; Nenes, Athanasios

2016-04-01

Characterization of CCN activity of bacteria, other than a few select types such as Pseudomonas syringae, is limited, especially when looked at in conjunction with corresponding IN activity. The link between these two points is especially important for bacteria as those that have high CCN activity are likely to form an aqueous phase required for immersion freezing. Given the high ice nucleation temperature of bacterial cells, especially in immersion mode, it is important to characterize the CCN and IN activity of many different bacterial strains. To this effect, we developed a droplet freezing assay (DFA) which consists of an aluminum cold plate, cooled by a continuous flow of an ethylene glycol-water mixture, in order to observe immersion freezing of the collected bacteria. Here, we present the initial results on the CCN and IN activities of bacterial samples we have collected in Atlanta, GA. Bacterial strains were collected and isolated from rainwater samples taken from different storms throughout the year. We then characterized the CCN activity of each strain using a DMT Continuous Flow Streamwise Thermal Gradient CCN Counter by exposing the aerosolized bacteria to supersaturations ranging from 0.05% to 0.6%. Additionally, using our new DFA, we characterized the IN activity of each bacterial strain at temperatures ranging from -20oC to 0oC. The combined CCN and IN activity gives us valuable information on how some uncharacterized bacteria contribute to warm and mixed-phase cloud formation in the atmosphere.

Custodial Homes, Therapeutic Homes, and Parental Acceptance: Parental Experiences of Autism in Kerala, India and Atlanta, GA USA.

Science.gov (United States)

Sarrett, Jennifer C

2015-06-01

The home is a critical place to learn about cultural values of childhood disability, including autism and intellectual disabilities. The current article describes how the introduction of autism into a home and the availability of intervention options change the structure and meaning of a home and reflect parental acceptance of a child's autistic traits. Using ethnographic data from Kerala, India and Atlanta, GA USA, a description of two types of homes are developed: the custodial home, which is primarily focused on caring for basic needs, and the therapeutic home, which is focused on changing a child's autistic traits. The type of home environment is respondent to cultural practices of child rearing in the home and influences daily activities, management, and care in the home. Further, these homes differ in parental acceptance of their autistic children's disabilities, which is critical to understand when engaging in international work related to autism and intellectual disability. It is proposed that parental acceptance can be fostered through the use of neurodiverse notions that encourage autism acceptance.

Trends in the prevalence of autism spectrum disorder, cerebral palsy, hearing loss, intellectual disability, and vision impairment, metropolitan atlanta, 1991-2010.

Directory of Open Access Journals (Sweden)

Kim Van Naarden Braun

Full Text Available This study examined the prevalence and characteristics of autism spectrum disorder (ASD, cerebral palsy (CP, hearing loss (HL, intellectual disability (ID, and vision impairment (VI over a 15-20 year time period, with specific focus on concurrent changes in ASD and ID prevalence. We used data from a population-based developmental disabilities surveillance program for 8-year-olds in metropolitan Atlanta. From 1991-2010, prevalence estimates of ID and HL were stable with slight increases in VI prevalence. CP prevalence was constant from 1993-2010. The average annual increase in ASD prevalence was 9.3% per year from 1996-2010, with a 269% increase from 4.2 per 1,000 in 1996 to 15.5 per 1,000 in 2010. From 2000-2010, the prevalence of ID without ASD was stable; during the same time, the prevalence of ASD with and without co-occurring ID increased by an average of 6.6% and 9.6% per year, respectively. ASD prevalence increases were found among both males and females, and among nearly all racial/ethnic subgroups and levels of intellectual ability. Average annual prevalence estimates from 1991-2010 underscore the significant community resources needed to provide early intervention and ongoing supports for children with ID (13.0 per 1,000, CP, (3.5 per 1,000, HL (1.4 per 1,000 and VI (1.3 in 1,000, with a growing urgency for children with ASD.

Health and Environment Linked for Information Exchange in Atlanta (HELIX-Atlanta): A Pilot Tracking System

Science.gov (United States)

Rickman, Doug; Shire, J.; Qualters, J.; Mitchell, K.; Pollard, S.; Rao, R.; Kajumba, N.; Quattrochi, D.; Estes, M., Jr.; Meyer, P.;

Meteorological detrending of primary and secondary pollutant concentrations: Method application and evaluation using long-term (2000-2012) data in Atlanta

Science.gov (United States)

Henneman, Lucas R. F.; Holmes, Heather A.; Mulholland, James A.; Russell, Armistead G.

2015-10-01

The effectiveness of air pollution regulations and controls are evaluated based on measured air pollutant concentrations. Air pollution levels, however, are highly sensitive to both emissions and meteorological fluctuations. Therefore, an assessment of the change in air pollutant levels due to emissions controls must account for these meteorological fluctuations. Two empirical methods to quantify the impact of meteorology on pollutant levels are discussed and applied to the 13-year time period between 2000 and 2012 in Atlanta, GA. The methods employ Kolmogorov-Zurbenko filters and linear regressions to detrended pollutant signals into long-term, seasonal, weekly, short-term, and white-noise components. The methods differ in how changes in weekly and holiday emissions are accounted for. Both can provide meteorological adjustments on a daily basis for future use in acute health analyses. The meteorological impact on daily signals of ozone, NOx, CO, SO2, PM2.5, and PM species are quantified. Analyses show that the substantial decreases in seasonal averages of NOx and SO2 correspond with controls implemented in the metropolitan Atlanta area. Detrending allows for the impacts of some controls to be observed with averaging times of as little as 3 months. Annual average concentrations of NOx, SO2, and CO have all fallen by at least 50% since 2000. Reductions in NOx levels, however, do not lead to uniform reductions in ozone. While average detrended summer average maximum daily average 8 h ozone (MDA8h O3) levels fell by 4% (2.2 ± 2 ppb) between 2000 and 2012, winter averages have increased by 12% (3.8 ± 1.4 ppb), providing further evidence that high ozone levels are NOx-limited and lower ozone concentrations are NOx-inhibited. High ozone days (with MDA8h O3 greater than 60 ppb) decreased both in number and in magnitude over the study period.

Remote Sensing and Spatial Growth Modeling Coupled With Air Quality Modeling to Assess the Impact of Atlanta, Georgia on the Local and Regional Environment

Science.gov (United States)

Quattrochi, D. A.; Estes, M. G.; Crosson, W. L.; Johnson, H.; Khan, M.

2006-05-01

The growth of cities, both in population and areal extent, appears as an inexorable process. Urbanization continues at a rapid rate, and it is estimated that by the year 2025, 60 percent of the world's population will live in cities. Urban expansion has profound impacts on a host of biophysical, environmental, and atmospheric processes within an urban ecosystems perspective. A reduction in air quality over cities is a major result of these impacts. Because of its complexity, the urban landscape is not adequately captured in air quality models such as the Community Multiscale Air Quality (CMAQ) model that is used to assess whether urban areas are in attainment of EPA air quality standards, primarily for ground level ozone. This inadequacy of the CMAQ model to sufficiently respond to the heterogeneous nature of the urban landscape can impact how well the model predicts ozone levels over metropolitan areas and ultimately, whether cities exceed EPA ozone air quality standards. We are exploring the utility of high-resolution remote sensing data and urban spatial growth modeling (SGM) projections as improved inputs to a meteorological/air quality modeling system focusing on the Atlanta, Georgia metropolitan area as a case study. These growth projections include "business as usual" and "smart growth" scenarios out to 2030. The growth projections illustrate the effects of employing urban heat island mitigation strategies, such as increasing tree canopy and albedo across the Atlanta metro area, which in turn, are used to model how air temperature can potentially be moderated as impacts on elevating ground-level ozone, as opposed to not utilizing heat island mitigation strategies. The National Land Cover Dataset at 30m resolution is being used as the land use/land cover input and aggregated to the 4km scale for the MM5 mesoscale meteorological model and the CMAQ modeling schemes. Use of these data has been found to better characterize low density/suburban development as

Spatial Growth Modeling and High Resolution Remote Sensing Data Coupled with Air Quality Modeling to Assess the Impact of Atlanta, Georgia on the Local and Regional Environment

Science.gov (United States)

Quattrochi, Dale A.; Estes, Maurice G., Jr.; Crosson, William; Johnson, Hoyt; Khan, Maudood

2006-01-01

The growth of cities, both in population and areal extent, appears as an inexorable process. Urbanization continues at a rapid rate, and it is estimated that by the year 2025, 60 percent of the world s population will live in cities. Urban expansion has profound impacts on a host of biophysical, environmental, and atmospheric processes within an urban ecosystems perspective. A reduction in air quality over cities is a major result of these impacts. Because of its complexity, the urban landscape is not adequately captured in air quality models such as the Community Multiscale Air Quality (CMAQ) model that is used to assess whether urban areas are in attainment of EPA air quality standards, primarily for ground level ozone. This inadequacy of the CMAQ model to sufficiently respond to the heterogeneous nature of the urban landscape can impact how well the model predicts ozone levels over metropolitan areas and ultimately, whether cities exceed EPA ozone air quality standards. We are exploring the utility of high-resolution remote sensing data and urban spatial growth modeling (SGM) projections as improved inputs to a meteorological/air quality modeling system focusing on the Atlanta, Georgia metropolitan area as a case study. These growth projections include business as usual and smart growth scenarios out to 2030. The growth projections illustrate the effects of employing urban heat island mitigation strategies, such as increasing tree canopy and albedo across the Atlanta metro area, which in turn, are used to model how air temperature can potentially be moderated as impacts on elevating ground-level ozone, as opposed to not utilizing heat island mitigation strategies. The National Land Cover Dataset at 30m resolution is being used as the land use/land cover input and aggregated to the 4km scale for the MM5 mesoscale meteorological model and the CMAQ modeling schemes. Use of these data has been found to better characterize low density/suburban development as compared

Cryptosporidium and Giardia in Swimming Pools, Atlanta, Georgia

Centers for Disease Control (CDC) Podcasts

In this podcast, Dan Rutz speaks with Dr. Joan Shields, a guest researcher with the Healthy Swimming Program at CDC, about an article in June 2008 issue of Emerging Infectious Diseases reporting on the results of a test of swimming pools in the greater Atlanta, Georgia area. Dr. Shields tested 160 pools in metro Atlanta last year for Cryptosporidium and Giardia. These germs cause most recreational water associated outbreaks.

Trends in on-road vehicle emissions and ambient air quality in Atlanta, Georgia, USA, from the late 1990s through 2009.

Science.gov (United States)

Vijayaraghavan, Krish; DenBleyker, Allison; Ma, Lan; Lindhjem, Chris; Yarwood, Greg

2014-07-01

On-road vehicle emissions of carbon monoxide (CO), nitrogen oxides (NO(x)), and volatile organic compounds (VOCs) during 1995-2009 in the Atlanta Metropolitan Statistical Area were estimated using the Motor Vehicle Emission Simulator (MOVES) model and data from the National Emissions Inventories and the State of Georgia. Statistically significant downward trends (computed using the nonparametric Theil-Sen method) in annual on-road CO, NO(x), and VOC emissions of 6.1%, 3.3%, and 6.0% per year, respectively, are noted during the 1995-2009 period despite an increase in total vehicle distance traveled. The CO and NO(x) emission trends are correlated with statistically significant downward trends in ambient air concentrations of CO and NO(x) in Atlanta ranging from 8.0% to 11.8% per year and from 5.8% to 8.7% per year, respectively, during similar time periods. Weather-adjusted summertime ozone concentrations in Atlanta exhibited a statistically significant declining trend of 2.3% per year during 2001-2009. Although this trend coexists with the declining trends in on-road NO(x), VOC, and CO emissions, identifying the cause of the downward trend in ozone is complicated by reductions in multiple precursors from different source sectors. Implications: Large reductions in on-road vehicle emissions of CO and NO(x) in Atlanta from the late 1990s to 2009, despite an increase in total vehicle distance traveled, contributed to a significant improvement in air quality through decreases in ambient air concentrations of CO and NO(x) during this time period. Emissions reductions in motor vehicles and other source sectors resulted in these improvements and the observed declining trend in ozone concentrations over the past decade. Although these historical trends cannot be extrapolated to the future because pollutant concentration contributions due to on-road vehicle emissions will likely become an increasingly smaller fraction of the atmospheric total, they provide an indication of

The Atlanta Urban Debate League: Exploring the Making of a Critical Literacy Space

Science.gov (United States)

Cridland-Hughes, Susan

2016-01-01

The Atlanta Urban Debate League was established in 1985 as an after school program focused on providing debate outreach to high school students in the Atlanta public schools. Still in operation today, volunteers work with current students in public middle and high schools in Atlanta, supporting students as they practice reading, writing, speaking…

Cryptosporidium and Giardia in Swimming Pools, Atlanta, Georgia

Centers for Disease Control (CDC) Podcasts

2008-05-29

In this podcast, Dan Rutz speaks with Dr. Joan Shields, a guest researcher with the Healthy Swimming Program at CDC, about an article in June 2008 issue of Emerging Infectious Diseases reporting on the results of a test of swimming pools in the greater Atlanta, Georgia area. Dr. Shields tested 160 pools in metro Atlanta last year for Cryptosporidium and Giardia. These germs cause most recreational water associated outbreaks.  Created: 5/29/2008 by Emerging Infectious Diseases.   Date Released: 5/29/2008.

Disparities in herpes simplex virus type 2 infection between black and white men who have sex with men in Atlanta, GA.

Science.gov (United States)

Okafor, Netochukwu; Rosenberg, Eli S; Luisi, Nicole; Sanchez, Travis; del Rio, Carlos; Sullivan, Patrick S; Kelley, Colleen F

2015-09-01

HIV disproportionately affects black men who have sex with men, and herpes simplex virus type 2 is known to increase acquisition of HIV. However, data on racial disparities in herpes simplex virus type 2 prevalence and risk factors are limited among men who have sex with men in the United States. InvolveMENt was a cohort study of black and white HIV-negative men who have sex with men in Atlanta, GA. Univariate and multivariate cross-sectional associations with herpes simplex virus type 2 seroprevalence were assessed among 455 HIV-negative men who have sex with men for demographic, behavioural and social determinant risk factors using logistic regression. Seroprevalence of herpes simplex virus type 2 was 23% (48/211) for black and 16% (38/244) for white men who have sex with men (p = 0.05). Education, poverty, drug/alcohol use, incarceration, circumcision, unprotected anal intercourse, and condom use were not associated with herpes simplex virus type 2. In multivariate analyses, black race for those ≤25 years, but not >25 years, and number of sexual partners were significantly associated. Young black men who have sex with men are disproportionately affected by herpes simplex virus type 2, which may contribute to disparities in HIV acquisition. An extensive assessment of risk factors did not explain this disparity in herpes simplex virus type 2 infection suggesting differences in susceptibility or partner characteristics. © The Author(s) 2014.

Hybrid Multistarting GA-Tabu Search Method for the Placement of BtB Converters for Korean Metropolitan Ring Grid

Directory of Open Access Journals (Sweden)

Remund J. Labios

2016-01-01

Full Text Available This paper presents a method to determine the optimal locations for installing back-to-back (BtB converters in a power grid as a countermeasure to reduce fault current levels. The installation of BtB converters can be regarded as network reconfiguration. For the purpose, a hybrid multistarting GA-tabu search method was used to determine the best locations from a preselected list of candidate locations. The constraints used in determining the best locations include circuit breaker fault current limits, proximity of proposed locations, and capability of the solution to reach power flow convergence. A simple power injection model after applying line-opening on selected branches was used as a means for power flows with BtB converters. Kron reduction was also applied as a method for network reduction for fast evaluation of fault currents with a given topology. Simulations of the search method were performed on the Korean power system, particularly the Seoul metropolitan area.

Remote Sensing of Atlanta's Urban Sprawl and the Distribution of Land Cover and Surface Temperature

Science.gov (United States)

Laymon, Charles A.; Estes, Maurice G., Jr.; Quattrochi, Dale A.; Goodman, H. Michael (Technical Monitor)

2001-01-01

Between 1973 and 1992, an average of 20 ha of forest was lost each day to urban expansion of Atlanta, Georgia. Urban surfaces have very different thermal properties than natural surfaces-storing solar energy throughout the day and continuing to release it as sensible heat well after sunset. The resulting heat island effect serves as catalysts for chemical reactions from vehicular exhaust and industrialization leading to a deterioration in air quality. In this study, high spatial resolution multispectral remote sensing data has been used to characterize the type, thermal properties, and distribution of land surface materials throughout the Atlanta metropolitan area. Ten-meter data were acquired with the Advanced Thermal and Land Applications Sensor (ATLAS) on May 11 and 12, 1997. ATLAS is a 15-channel multispectral scanner that incorporates the Landsat TM bands with additional bands in the middle reflective infrared and thermal infrared range. The high spatial resolution permitted discrimination of discrete surface types (e.g., concrete, asphalt), individual structures (e.g., buildings, houses) and their associated thermal characteristics. There is a strong temperature contrast between vegetation and anthropomorphic features. Vegetation has a modal temperature at about 20 C, whereas asphalt shingles, pavement, and buildings have a modal temperature of about 39 C. Broad-leaf vegetation classes are indistinguishable on a thermal basis alone. There is slightly more variability (+/-5 C) among the urban surfaces. Grasses, mixed vegetation and mixed urban surfaces are intermediate in temperature and are characterized by broader temperature distributions with modes of about 29 C. Thermal maps serve as a basis for understanding the distribution of "hotspots", i.e., how landscape features and urban fabric contribute the most heat to the lower atmosphere.

78 FR 76810 - Information Collection; Environmental Justice and the Urban Forest in Atlanta, GA

Science.gov (United States)

2013-12-19

... should be addressed to Cassandra Johnson Gaither, Forestry Sciences Lab, 320 Green St., Athens, GA 30602... public may inspect comments received at Forestry Sciences Lab, 320 Green St., Athens, GA 30602 during... Type of Request: New Abstract: This information collection records data on the attitude and engagement...

FAA Air Traffic Activity. Fiscal Year 1991

Science.gov (United States)

1991-01-01

MGR) GA 448 0 0 448 0 THOMASVILLE MUNICIPAL ............................................ (TVI) GA 963 0 0 963 0 TIFTON ...listed below for ordering purposes. ATLANTA, GA KANSAS CITY, MO 275 Peachtree Street. NE, Room 100, P.O. Box 56445, Atlanta, GA 120 Bannister Mail, 5600...CA L 3 660680 TORRANCE MUNICIPAL ................................... CA L 83 210157 ATLANTA INTERNATIONAL ............................. GA

Remote Sensing of Atlanta's Urban Sprawl and the Distribution of Land Cover and Surface Temperatures

Science.gov (United States)

Laymon, Charles A.; Estes, Maurice G., Jr.; Quattrochi, Dale A.; Arnold, James E. (Technical Monitor)

2001-01-01

Between 1973 and 1992, an average of 20 ha of forest was lost each day to urban expansion of Atlanta, Georgia. Urban surfaces have very different thermal properties than natural surfaces-storing solar energy throughout the day and continuing to release it as sensible heat well after sunset. The resulting heat island effect serves as catalysts for chemical reactions from vehicular exhaust and industrialization leading to a deterioration in air quality. In this study, high spatial resolution multispectral remote sensing data has been used to characterize the type, thermal properties, and distribution of land surface materials throughout the Atlanta metropolitan area. Ten-meter data were acquired with the Advanced Thermal and Land Applications Sensor (ATLAS) on May 11 and 12, 1997. ATLAS is a 15-channel multispectral scanner that incorporates the Landsat TM bands with additional bands in the middle reflective infrared and thermal infrared range. The high spatial resolution permitted discrimination of discrete surface types (e.g., concrete, asphalt), individual structures (e.g., buildings, houses) and their associated thermal characteristics. There is a strong temperature contrast between vegetation and anthropomorphic features. Vegetation has a modal temperature at about 20 C, whereas asphalt shingles, pavement, and buildings have a modal temperature of about 39 C. Broad-leaf vegetation classes are indistinguishable on a thermal basis alone. There is slightly more variability (plus or minus 5 C) among the urban surfaces. Grasses, mixed vegetation and mixed urban surfaces are intermediate in temperature and are characterized by broader temperature distributions with modes of about 29 C. Thermal maps serve as a basis for understanding the distribution of "hotspots", i.e., how landscape features and urban fabric contribute the most heat to the lower atmosphere.

Comparison of Daytime and Nighttime Populations Adjacent to Interstate Highways in Metropolitan Areas Using LandScan USA

International Nuclear Information System (INIS)

Johnson, Paul E

2007-01-01

An article of similar title was published in the International Journal of Radioactive Materials Transport in 1999. The study concluded that the daytime and nighttime populations are not substantially different for the metropolitan areas examined. This study revisits the issue, but using the LandScan USA high resolution population distribution data, which includes daytime and night-time population. Segments of Interstate highway beltways, along with the direct route through the city, for Atlanta, St. Louis, and Kansas City are examined with an 800m buffer from either side of the highways. The day/night ratio of population is higher using the LandScan USA data. LandScan USA daytime and night-time data will be incorporated into the TRAGIS routing model in future

Derivation of Nationally Consistent Indices Representing Urban Intensity Within and Across Nine Metropolitan Areas of the Conterminous United States

Science.gov (United States)

Cuffney, Thomas F.; Falcone, James A.

2009-01-01

Two nationally consistent multimetric indices of urban intensity were developed to support studies of the effects of urbanization on streams in nine metropolitan areas of the conterminous United States: Atlanta, Georgia; Birmingham, Alabama; Boston, Massachusetts; Dallas-Fort Worth, Texas; Denver, Colorado; Milwaukee-Green Bay, Wisconsin; Portland, Oregon; Raleigh, North Carolina; and Salt Lake City, Utah. These studies were conducted as a part of the U.S. Geological Survey's National Water-Quality Assessment Program. These urban intensity indices were used to define gradients of urbanization and to interpret biological, physical, and chemical changes along these gradients. Ninety census, land-cover, and infrastructure variables obtained from nationally available databases were evaluated. Only variables that exhibited a strong and consistent linear relation with 2000 population density were considered for use in the indices. Housing-unit density (HUDEN), percentage of basin area in developed land (P_NLCD1_2), and road density (ROADDEN) were selected as the best representatives of census, land-cover, and infrastructure variables. The metropolitan area national urban intensity index (MA-NUII) was scaled to represent urban intensity within each metropolitan area and ranged from 0 (little or no urban) to 100 (maximum urban) for sites within each metropolitan area. The national urban intensity index (NUII) was scaled to represent urban intensity across all nine metropolitan areas and ranged from 0 to 100 for all sites. The rates at which HUDEN, P_NLCD1_2, and ROADDEN changed with changes in population density varied among metropolitan areas. Therefore, these variables were adjusted to obtain a more uniform rate of response across metropolitan areas in the derivation of the NUII. The NUII indicated that maximum levels of urban intensity occurred in the West and Midwest rather than in the East primarily because small inner-city streams in eastern metropolitan areas are

Why, Where, and How to Infuse the Atlanta Sociological Laboratory into the Sociology Curriculum

Science.gov (United States)

Wright, Earl, II

2012-01-01

The Atlanta Sociological Laboratory is the moniker bestowed on scholars engaged in sociological research at Atlanta University between 1895 and 1924. Under the leadership of W. E. B. Du Bois, 1897-1914, this school made substantive yet marginalized contributions to the discipline. Its accomplishments include, but are not limited to, its…

Use of chemical analysis and assays of semipermeable membrane devices extracts to assess the response of bioavailable organic pollutants in streams to urbanization in six metropolitan areas of the United States

Science.gov (United States)

Bryant, Wade L.; Goodbred, Steve L.; Leiker, Thomas L.; Inouye, Laura; Johnson, B. Thomas

2007-01-01

Studies to assess the effects of urbanization on stream ecosystems are being conducted as part of the U.S. Geological Survey’s National Water-Quality Assessment (NAWQA) Program. The overall objectives of these studies are to (1) determine how hydrologic, geomorphic, water quality, habitat, and biological characteristics respond to land-use changes associated with urbanization in specific environmental settings, and (2) compare these responses across environmental settings. As part of an integrated assessment, semipermeable membrane devices (SPMDs) were deployed in streams along a gradient of urban land-use intensity in and around Atlanta, Georgia; Raleigh-Durham, North Carolina; and Denver-Fort Collins, Colorado, in 2003; and Dallas-Fort Worth, Texas; Milwaukee-Green Bay, Wisconsin; and Portland, Oregon, in 2004. Sites were selected to avoid point-source discharge and to minimize natural variability within each of the six metropolitan areas. In addition to standard chemical analysis for hydrophobic organic contaminants, three assays were used to address mixtures and potential toxicity: (1) Fluoroscan provides an estimate of the total concentration of polycyclic aromatic hydrocarbons (PAHs); (2) the P450RGS assay indicates the presence and levels of aryl hydrocarbon receptor agonists; and (3) Microtox® measures toxicological effects on photo-luminescent bacteria.Of the 140 compounds targeted or identified by gas chromatography/mass spectrometry analysis in this study, 67 were not detected. In terms of numbers and types of compounds, the following were detected: 2 wood preservatives, 6 insecticides (parent compounds), 5 herbicides, 22 polycyclic aromatic hydrocarbons, 2 dibenzofurans, 4 polychlorinated biphenyls, 7 compounds associated with fragrances or personal care products, 4 steroids associated with wastewater, 5 polydibromated diphenyl ethers (flame retardants), 3 plasticizers, 3 antimicrobials/disinfectants, and 3 detergent metabolites.Of the 73

Atlanta Gas Light opts for an in-house AM/FM

International Nuclear Information System (INIS)

Hull, S.R.

1993-01-01

Atlanta Gas Light Co. has completed facilities conversion for the first of nine planned implementations of its automated mapping/facilities management mapping/facilities management system, the Facilities and Land Base Automated Mapping Environment or FLAME. Facilities conversion is generally the most costly and time-consuming phase of an AM/FM project. Many companies decide to rely totally on outside expertise for this phase because of the complexity of the process an the resources required to complete it. Atlanta Gas Light decided to take an alternate approach by performing the facilities conversion process in-house for the first implementation, than having an outside vendor carrying out a future implementation and compare the two

HIV sexual transmission risks in the context of clinical care: a prospective study of behavioural correlates of HIV suppression in a community sample, Atlanta, GA, USA.

Science.gov (United States)

Kalichman, Seth C; Cherry, Chauncey; Kalichman, Moira O; Washington, Christopher; Grebler, Tamar; Merely, Cindy; Welles, Brandi; Pellowski, Jennifer; Kegler, Christopher

2015-01-01

Antiretroviral therapy (ART) improves the health of people living with HIV and has the potential to reduce HIV infectiousness, thereby preventing HIV transmission. However, the success of ART for HIV prevention hinges on sustained ART adherence and avoiding sexually transmitted infections (STI). To determine the sexual behaviours and HIV transmission risks of individuals with suppressed and unsuppressed HIV replication (i.e., viral load). Assessed HIV sexual transmission risks among individuals with clinically determined suppressed and unsuppressed HIV. Participants were 760 men and 280 women living with HIV in Atlanta, GA, USA, who completed behavioural assessments, 28-daily prospective sexual behaviour diaries, one-month prospective unannounced pill counts for ART adherence, urine screening for illicit drug use and medical record chart abstraction for HIV viral load. Individuals with unsuppressed HIV demonstrated a constellation of behavioural risks for transmitting HIV to uninfected sex partners that included symptoms of STI and substance use. In addition, 15% of participants with suppressed HIV had recent STI symptoms/diagnoses, indicating significant risks for sexual infectiousness despite their HIV suppression in blood plasma. Overall, 38% of participants were at risk for elevated sexual infectiousness and just as many engaged in unprotected sexual intercourse with non-HIV-infected partners. Implementation strategies for using HIV treatments as HIV prevention requires enhanced behavioural interventions that extend beyond ART to address substance use and sexual health that will otherwise undermine the potential preventive impact of early ART.

76 FR 37263 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2011-06-27

..., Amdt 5B 28-Jul-11 SC Allendale Allendale County... 1/2564 6/3/11 GPS RWY 17, Orig-A 28-Jul-11 GA Tifton... RNAV (RNP) Y RWY 9L, Orig-C Hollywood Intl. 28-Jul-11 GA Atlanta Hartsfield-Jackson 1/0500 6/3/11 RNAV (RNP) Z RWY 26R, Orig-A Atlanta Intl. 28-Jul-11 GA Atlanta Hartsfield-Jackson 1/0501 6/3/11 RNAV (RNP...

NEOPLASIA IN SNAKES AT ZOO ATLANTA DURING 1992-2012.

Science.gov (United States)

Page-Karjian, Annie; Hahne, Megan; Leach, Kate; Murphy, Hayley; Lock, Brad; Rivera, Samuel

2017-06-01

A retrospective study was conducted to review neoplasia of captive snakes in the Zoo Atlanta collection from 1992 to 2012. Of 255 snakes that underwent necropsy and histopathologic examination at Zoo Atlanta during the study period, 37 were observed with neoplasia at necropsy. In those 37 snakes, 42 neoplastic lesions of 18 primary cell types were diagnosed. Thirty-five of those neoplasms (83.3%) were malignant, and of those, 19 were of mesenchymal origin, whereas 14 were of epithelial origin. The median annual rate of neoplasia at necropsy was 12.5% (interquartile range = 2.8-19.5%) over the 21-yr study period. The mean estimated age at death for snakes with neoplasia was 13.2 yr (range, 1-24 yr). Investigating the incidence and clinical significance of neoplasia in captive snakes is vital for developing effective preventative and treatment regimes.

MPLS for metropolitan area networks

CERN Document Server

Tan, Nam-Kee

2004-01-01

METROPOLITAN AREA NETWORKS AND MPLSRequirements of Metropolitan Area Network ServicesMetropolitan Area Network OverviewThe Bandwidth DemandThe Metro Service Provider's Business ApproachesThe Emerging Metro Customer Expectations and NeedsSome Prevailing Metro Service OpportunitiesService Aspects and RequirementsRoles of MPLS in Metropolitan Area NetworksMPLS PrimerMPLS ApplicationsTRAFFIC ENGINEERING ASPECTS OF METROPOLITAN AREA NETWORKSTraffic Engineering ConceptsNetwork CongestionHyper Aggregation ProblemEasing CongestionNetwork ControlTactical versus Strategic Traffic EngineeringIP/ATM Overl

Willingness to use pre-exposure prophylaxis among Black and White men who have sex with men in Atlanta, Georgia.

Science.gov (United States)

Rolle, Charlotte-Paige; Rosenberg, Eli S; Luisi, Nicole; Grey, Jeremy; Sanchez, Travis; Del Rio, Carlos; Peterson, John L; Frew, Paula M; Sullivan, Patrick S; Kelley, Colleen F

2017-08-01

PrEP willingness may be different among black and white men who have sex with men (MSM) given known disparities in HIV incidence, sociodemographic factors, and healthcare access between these groups. We surveyed 482 black and white HIV-negative MSM in Atlanta, GA about their willingness to use pre-exposure prophylaxis (PrEP) and facilitators and barriers to PrEP willingness. Overall, 45% (215/482) of men indicated interest in using PrEP. Engaging in recent unprotected anal intercourse (UAI) was the only factor significantly associated with PrEP willingness in multivariate analyses (OR 1.73, 95% CI 1.13, 2.65). Willing men identified "extra protection" against HIV as the most common reason for interest in using PrEP, whereas unwilling men most commonly cited not wanting to take medication daily, and this reason was more common among white MSM (42.3% of white MSM vs. 28.9% of black MSM, p = 0.04). Most men indicated willingness to use PrEP if cost was <50 dollars/month; however, more black MSM indicated willingness to use PrEP only if cost were free (17.9% of white MSM vs. 25.9% of black MSM, p = 0.03). Overall, these data are useful to scale up PrEP interventions targeting at-risk MSM in Atlanta and highlight the need for implementation of low cost-programs, which will be especially important for black MSM.

Spatial variations in US poverty: beyond metropolitan and non-metropolitan.

Science.gov (United States)

Wang, Man; Kleit, Rachel Garshick; Cover, Jane; Fowler, Christopher S

2012-01-01

Because poverty in rural and urban areas of the US often has different causes, correlates and solutions, effective anti-poverty policies depend on a thorough understanding of the ruralness or urbanness of specific places. This paper compares several widely used classification schemes and the varying magnitudes of poverty that they reveal in the US. The commonly used ‘metropolitan/non-metropolitan’ distinction obscures important socioeconomic differences among metropolitan areas, making our understanding of the geography of poverty imprecise. Given the number and concentration of poor people living in mixed-rural and rural counties in metropolitan regions, researchers and policy-makers need to pay more nuanced attention to the opportunities and constraints such individuals face. A cross-classification of the Office of Management and Budget’s metro system with a nuanced RUDC scheme is the most effective for revealing the geographical complexities of poverty within metropolitan areas.

Environmental Public Health Survelliance for Exposure to Respiratory Health Hazards: A Joint NASA/CDC Project to Use Remote Sensing Data for Estimating Airborne Particulate Matter Over the Atlanta, Georgia Metropolitan Area

Science.gov (United States)

Quattrochi, Dale A.; Rickman, Douglas; Mohammad, Al-Hamdan; Crosson, William; Estes, Maurice, Jr.; Limaye, Ashutosh; Qualters, Judith

2008-01-01

Describes the public health surveillance efforts of NASA, in a joint effort with the Center for Disease Control (CDC). NASA/MSFC and the CDC are partners in linking nvironmental and health data to enhance public health surveillance. The use of NASA technology creates value - added geospatial products from existing environmental data sources to facilitate public health linkages. The venture sought to provide remote sensing data for the 5-country Metro-Atlanta area and to integrate this environmental data with public health data into a local network, in an effort to prevent and control environmentally related health effects. Remote sensing data used environmental data (Environmental Protection Agency [EPA] Air Quality System [AQS] ground measurements and MODIS Aerosol Optical Depth [AOD]) to estimate airborne particulate matter over Atlanta, and linked this data with health data related to asthma. The study proved the feasibility of linking environmental data (MODIS particular matter estimates and AQS) with health data (asthma). Algorithms were developed for QC, bias removal, merging MODIS and AQS particulate matter data, as well as for other applications. Additionally, a Business Associate Agreement was negotiated for a health care provider to enable sharing of Protected Health Information.

Atlanta Rail Yard Study: Evaluation of local-scale air pollution ...

Science.gov (United States)

Intermodal rail yards are important nodes in the freight transportation network, where freight is organized and moved from one mode of transport to another, critical equipment is serviced, and freight is routed to its next destination. Rail yard environments are also areas with multiple sources of air pollutant emissions (e.g., heavy-duty vehicles, locomotives, cranes), which may affect local air quality in residential areas nearby. In order to understand emissions and related air quality impacts, two field studies took place over the time span of 2010-2012 to measure air pollution trends in close proximity to the Inman and Tilford rail yard complex in Atlanta, GA. One field study involved long-term stationary monitoring of black carbon, fine particles, and carbon dioxide at two stations nearby the rail yard. In addition, a second field study performed intensive mobile air monitoring for a one month period in the summer of 2012 at a roadway network surrounding the rail yard complex and measured a comprehensive array of pollutants. Real-time mobile particulate measurements included particle counts, extinction coefficient, black carbon via light-absorption and particle incandescence, and particle composition derived by aerosol mass spectrometry. Gas-phase measurements included oxides of nitrogen, sulfur dioxide, carbon dioxide, and air toxics (e.g., benzene). Both sets of measurements determined detectable local influence from rail yard-related emissions.

Fusion of multisource and multiscale remote sensing data for water availability assessment in a metropolitan region

Science.gov (United States)

Chang, N. B.; Yang, Y. J.; Daranpob, A.

2009-09-01

Recent extreme hydroclimatic events in the United States alone include, but are not limited to, the droughts in Maryland and the Chesapeake Bay area in 2001 through September 2002; Lake Mead in Las Vegas in 2000 through 2004; the Peace River and Lake Okeechobee in South Florida in 2006; and Lake Lanier in Atlanta, Georgia in 2007 that affected the water resources distribution in three states - Alabama, Florida and Georgia. This paper provides evidence from previous work and elaborates on the future perspectives that will collectively employ remote sensing and in-situ observations to support the implementation of the water availability assessment in a metropolitan region. Within the hydrological cycle, precipitation, soil moisture, and evapotranspiration can be monitored by using WSR-88D/NEXRAD data, RADARSAT-1 images, and GEOS images collectively to address the spatiotemporal variations of quantitative availability of waters whereas the MODIS images may be used to track down the qualitative availability of waters in terms of turbidity, Chlorophyll-a and other constitutes of concern. Tampa Bay in Florida was selected as a study site in this analysis, where the water supply infrastructure covers groundwater, desalination plant, and surface water at the same time. Research findings show that through the proper fusion of multi-source and multi-scale remote sensing data for water availability assessment in metropolitan region, a new insight of water infrastructure assessment can be gained to support sustainable planning region wide.

78 FR 9771 - Notice of Opportunity for Public Comment on Surplus Property Release at Brunswick-Golden Isles...

Science.gov (United States)

2013-02-11

... address: Atlanta Airports District Office, Attn: Aimee A. McCormick, Program Manager, 1701 Columbia Ave... McCormick, Program Manager, Atlanta Airports District Office, 1701 Columbia Ave., Suite 2-260, Atlanta, GA...

Health and Environment Linked for Information Exchange (HELIX)-Atlanta: A CDC-NASA Joint Environmental Public Health Tracking Collaborative Project

Science.gov (United States)

Al-Hamdan, Mohammad; Luvall, Jeff; Crosson, Bill; Estes, Maury; Limaye, Ashutosh; Quattrochi, Dale; Rickman, Doug

2008-01-01

HELIX-Atlanta was developed to support current and future state and local EPHT programs to implement data linking demonstration projects which could be part of the CDC EPHT Network. HELIX-Atlanta is a pilot linking project in Atlanta for CDC to learn about the challenges the states will encounter. NASA/MSFC and the CDC are partners in linking environmental and health data to enhance public health surveillance. The use of NASA technology creates value added geospatial products from existing environmental data sources to facilitate public health linkages. Proving the feasibility of the approach is the main objective

Reassessment of biogenic volatile organic compound emissions in the Atlanta area

International Nuclear Information System (INIS)

Geron, C.D.; Pierce, T.E.; Guenther, A.B.

1995-01-01

Localized estimates of biogenic volatile organic compound (BVOC) emissions are important inputs for photochemical oxidant simulation models. Since forest tree species are the primary emitters of BVOCs, it is important to develop reliable estimates of their areal coverage and BVOC emission rates. A new system is used to estimate these emissions in the Atlanta area for specific tree genera at hourly and county levels. The U.S. Department of Agriculture, Forest Service Forest Inventory and Analysis data and an associated urban vegetation survey are used to estimate canopy occupancy by genus in the Atlanta area. A simple canopy model is used to adjust photosynthetically active solar radiation at five vertical levels in the canopy. Lraf temperature and photosynthetically active radiation derived from ambient conditions above the forest canopy are then used to drive empirical equations to estimate genus level emission rates of BVOCs vertically through forest canopies. These genera-level estimates are then aggregated to county and regional levels for input into air quality models and for comparison with (1) the regulatory model currently used and (2) previous estimates for the Atlanta area by local researchers. Estimated hourly emissions from the three approaches during a documented ozone event day are compared. The proposed model yields peak diurnal isoprene emission rates that are over a factor of three times higher than previous estimates. This results in total BVOC emission rates that are roughly a factor of two times higher than previous estimates. These emissions are compared with observed emissions from forests of similar composition. Possible implications for oxidant events are discussed. (author)

Influence of septic systems on stream base flow in the Apalachicola-Chattahoochee-Flint River Basin near Metropolitan Atlanta, Georgia, 2012

Science.gov (United States)

Clarke, John S.; Painter, Jaime A.

2014-01-01

Septic systems were identified at 241,733 locations in a 2,539-square-mile (mi2) study area that includes all or parts of 12 counties in the Metropolitan Atlanta, Georgia, area. Septic system percolation may locally be an important component of streamflow in small drainage basins where it augments natural groundwater recharge, especially during extreme low-flow conditions. The amount of groundwater reaching streams depends on how much is intercepted by plants or infiltrates to deeper parts of the groundwater system that flows beyond a basin divide and does not discharge into streams within a basin. The potential maximum percolation from septic systems in the study area is 62 cubic feet per second (ft3/s), of which 52 ft3/s is in the Chattahoochee River Basin and 10 ft3/s is in the Flint River Basin. These maximum percolation rates represent 0.4 to 5.7 percent of daily mean streamflow during the 2011–12 period at the farthest downstream gaging site (station 02338000) on the Chattahoochee River, and 0.5 to 179 percent of daily mean streamflow at the farthest downstream gaging site on the Flint River (02344350). To determine the difference in base flow between basins having different septic system densities, hydrograph separation analysis was completed using daily mean streamflow data at streamgaging stations at Level Creek (site 02334578), with a drainage basin having relatively high septic system density of 101 systems per square mile, and Woodall Creek (site 02336313), with a drainage basin having relatively low septic system density of 18 systems per square mile. Results indicated that base-flow yield during 2011–12 was higher at the Level Creek site, with a median of 0.47 cubic feet per second per square mile ([ft3/s]/mi2), compared to a median of 0.16 (ft3/s)/mi2, at the Woodall Creek site. At the less urbanized Level Creek site, there are 515 septic systems with a daily maximum percolation rate of 0.14 ft3/s, accounting for 11 percent of the base flow in

Describing Peripancreatic Collections According to the Revised Atlanta Classification of Acute Pancreatitis: An International Interobserver Agreement Study.

Science.gov (United States)

Bouwense, Stefan A; van Brunschot, Sandra; van Santvoort, Hjalmar C; Besselink, Marc G; Bollen, Thomas L; Bakker, Olaf J; Banks, Peter A; Boermeester, Marja A; Cappendijk, Vincent C; Carter, Ross; Charnley, Richard; van Eijck, Casper H; Freeny, Patrick C; Hermans, John J; Hough, David M; Johnson, Colin D; Laméris, Johan S; Lerch, Markus M; Mayerle, Julia; Mortele, Koenraad J; Sarr, Michael G; Stedman, Brian; Vege, Santhi Swaroop; Werner, Jens; Dijkgraaf, Marcel G; Gooszen, Hein G; Horvath, Karen D

2017-08-01

Severe acute pancreatitis is associated with peripancreatic morphologic changes as seen on imaging. Uniform communication regarding these morphologic findings is crucial for accurate diagnosis and treatment. For the original 1992 Atlanta classification, interobserver agreement is poor. We hypothesized that for the revised Atlanta classification, interobserver agreement will be better. An international, interobserver agreement study was performed among expert and nonexpert radiologists (n = 14), surgeons (n = 15), and gastroenterologists (n = 8). Representative computed tomographies of all stages of acute pancreatitis were selected from 55 patients and were assessed according to the revised Atlanta classification. The interobserver agreement was calculated among all reviewers and subgroups, that is, expert and nonexpert reviewers; interobserver agreement was defined as poor (≤0.20), fair (0.21-0.40), moderate (0.41-0.60), good (0.61-0.80), or very good (0.81-1.00). Interobserver agreement among all reviewers was good (0.75 [standard deviation, 0.21]) for describing the type of acute pancreatitis and good (0.62 [standard deviation, 0.19]) for the type of peripancreatic collection. Expert radiologists showed the best and nonexpert clinicians the lowest interobserver agreement. Interobserver agreement was good for the revised Atlanta classification, supporting the importance for widespread adaption of this revised classification for clinical and research communications.

Complejo Omni - Atlanta – (EE. UU.

Directory of Open Access Journals (Sweden)

Housworth, Marvin

1976-12-01

Full Text Available This complex of buildings, situated in the centre of Atlanta City, forms a dynamic nucleus for various social activities, such as recreational, commercial and business activities. These buildings are constructed above railway nets, due to special property rights for this lot, which constituted one of the main determinants for the characteristics of the property. The unit is made up by a luxurious hotel, two restaurants, office buildings and shopping arcades, arranged around a spacious inner yard. This patio is covered by means of an exceedingly big glass roof, supported by beams and steel framework and is provided with walls of big glazed surfaces. Thus, an intimate and friendly atmosphere is created, free from the contamination and noise of the big city whereby the square displays the typical characteristics of open squares in smaller towns.Este conjunto de edificios, emplazado en el centro de la ciudad de Atlanta, conforma un núcleo dinámico en donde se encuentran diversas actividades de tipo social: recreativas, comerciales y empresariales. Se ha construido sobre ruedas ferroviarias, en virtud de derechos especiales de propiedad que conservaba la parcela, lo que constituyó uno de los principales condicionamientos de fas características del proyecto. El complejo dispone de un hotel de lujo, dos restaurantes, edificios de oficinas y galerías comerciales, dispuestos en torno a un amplio espacio interior, cerrado por una enorme cubierta acristalada, apoyada en vigas y entramados metálicos, y por grandes ventanales corridos entre bloques. Conforma así un ambiente íntimo y acogedor, liberado del ruido y de la atmósfera turbulenta de la gran ciudad, con características propias de las pequeñas plazas populares.

Drinking water turbidity and emergency department visits for gastrointestinal illness in Atlanta, 1993-2004.

Science.gov (United States)

Tinker, Sarah C; Moe, Christine L; Klein, Mitchel; Flanders, W Dana; Uber, Jim; Amirtharajah, Appiah; Singer, Philip; Tolbert, Paige E

2010-01-01

The extent to which drinking water turbidity measurements indicate the risk of gastrointestinal illness is not well understood. Despite major advances in drinking water treatment and delivery, infectious disease can still be transmitted through drinking water in the United States, and it is important to have reliable indicators of microbial water quality to inform public health decisions. The objective of our study was to assess the relationship between gastrointestinal illness, quantified through emergency department visits, and drinking water quality, quantified as raw water and filtered water turbidity measured at the treatment plant. We examined the relationship between turbidity levels of raw and filtered surface water measured at eight major drinking water treatment plants in the metropolitan area of Atlanta, Georgia, and over 240,000 emergency department visits for gastrointestinal illness during 1993-2004 among the population served by these plants. We fit Poisson time-series statistical regression models that included turbidity in a 21-day distributed lag and that controlled for meteorological factors and long-term time trends. For filtered water turbidity, the results were consistent with no association with emergency department visits for gastrointestinal illness. We observed a modest association between raw water turbidity and emergency department visits for gastrointestinal illness. Our results suggest that source water quality may contribute modestly to endemic gastrointestinal illness in the study area. The association between turbidity and emergency department visits for gastrointestinal illness was only observed when raw water turbidity was considered; filtered water turbidity may not serve as a reliable indicator of modest pathogen risk at all treatment plants.

Efficient Metropolitan Resource Allocation

Directory of Open Access Journals (Sweden)

Richard Arnott

2016-05-01

Full Text Available Over the past 30 years Calgary has doubled in size, from a population of 640,645 in 1985 to 1,230,915 in 2015. During that time the City has had five different mayors, hosted the Winter Olympics, and expanded the C-Train from 25 platforms to 45. Calgary’s Metropolitan Area has grown too, with Airdrie, Chestermere, Okotoks and Cochrane growing into full-fledged cities, ripe with inter-urban commuters.* And with changes to provincial legislation in the mid-’90s, rural Rocky View County and the Municipal District of Foothills are now real competitors for residential, commercial and industrial development that in the past would have been considered urban. In this metropolitan system, where people live, their household structure, and their place of work informs the services they need to conduct their daily lives, and directly impacts the spatial character of the City and the broader region. In sum, Metropolitan Calgary is increasingly complex. Calgary and the broader metropolitan area will continue to grow, even with the current economic slowdown. Frictions within Calgary, between the various municipalities in the metropolitan area, and the priorities of other local authorities (such as the School Boards and Alberta Health Services will continue to impact the agendas of local politicians and their ability to answer to the needs of their residents. How resources – whether it is hard infrastructure, affordable housing, classrooms, or hospital beds – are allocated over space and how these resources are funded, directly impacts these relationships. This technical paper provides my perspective as an urban economist on the efficient allocation of resources within a metropolitan system in general, with reference to Calgary where appropriate, and serves as a companion to the previously released “Reflections on Calgary’s Spatial Structure: An Urban Economists Critique of Municipal Planning in Calgary.” It is hoped that the concepts reviewed

UNDERSTANDING THE INTERNATIONAL CONSENSUS FOR ACUTE PANCREATITIS: CLASSIFICATION OF ATLANTA 2012.

Science.gov (United States)

Souza, Gleim Dias de; Souza, Luciana Rodrigues Queiroz; Cuenca, Ronaldo Máfia; Jerônimo, Bárbara Stephane de Medeiros; Souza, Guilherme Medeiros de; Vilela, Vinícius Martins

2016-01-01

Contrast computed tomography and magnetic resonance imaging are widely used due to its image quality and ability to study pancreatic and peripancreatic morphology. The understanding of the various subtypes of the disease and identification of possible complications requires a familiarity with the terminology, which allows effective communication between the different members of the multidisciplinary team. Demonstrate the terminology and parameters to identify the different classifications and findings of the disease based on the international consensus for acute pancreatitis ( Atlanta Classification 2012). Search and analysis of articles in the "CAPES Portal de Periódicos with headings "acute pancreatitis" and "Atlanta Review". Were selected 23 articles containing radiological descriptions, management or statistical data related to pathology. Additional statistical data were obtained from Datasus and Population Census 2010. The radiological diagnostic criterion adopted was the Radiology American College system. The "acute pancreatitis - 2012 Rating: Review Atlanta classification and definitions for international consensus" tries to eliminate inconsistency and divergence from the determination of uniformity to the radiological findings, especially the terminology related to fluid collections. More broadly as "pancreatic abscess" and "phlegmon" went into disuse and the evolution of the collection of patient fluids can be described as "acute peripancreatic collections", "acute necrotic collections", "pseudocyst" and "necrosis pancreatic walled or isolated". Computed tomography and magnetic resonance represent the best techniques with sequential images available for diagnosis. Standardization of the terminology is critical and should improve the management of patients with multiple professionals care, risk stratification and adequate treatment. A tomografia computadorizada contrastada e a ressonância magnética são exames amplamente utilizados no estudo da

Overkill: Black Lives and the Spectacle of the Atlanta Cheating Scandal

Science.gov (United States)

Royal, Camika; Dodo Seriki, Vanessa

2018-01-01

This article examines the 2015 Atlanta cheating scandal trials and sentencing. Using critical race theory, the authors argue that cheating is a natural outgrowth of market-based school reform and that racial realism will always lead to scrutiny of Black performance. The sentences of these Black educators is overkill, rooted in anti-Blackness, and…

Regional Food Distribution Characteristics and a Methodology for Redistribution in Accordance with Crisis Relocation. Appendices.

Science.gov (United States)

1980-07-01

PREDLETON 1 1 1,500 * TOTAL 4 1 3 5,250 WILLIAMS BROTHERS CO TALLAPOOSA GA GA HARALSON 1 1 750 ** TOTAL 1 1 750 WILLIAMS BROTHERS GROCERY CO TIFTON GA GA ...T I 0 N ACER COUNTY STRS 1MIL MIL MIL MIL MIL ACV (000) A AND P TEA CO ATLANTA GA GA COBS 1 1 7,000 (Family Centers) GA DOUGHERTY 1 1 12,000 SC...RICILAND 1 1 ioooo TOTAL 3 1 2 29,000 A AND P TEA CO ATLANTA GA AL BAREOUR 1 1 1,500 AL BULLOCK 1 1 1,500 AL BUTLEP 1 1 3,000 AL CHAM3ERS 1 1 1,500 AL

Premises for Shaping Metropolitan Areas in Romania

Directory of Open Access Journals (Sweden)

RAULARIAN RUSU

2012-01-01

Full Text Available The setting up of metropolitan areas is a process which is still in progress in Romania. The legislative framework for the creation of these areas has been built up only since 2001, and there are still a number of juridical inconsistencies concerning the association of administrative units to form metropolitan areas. On the other hand, political reasons and the fear of losing a certain degree of authority and to become subordinates of the large cities (in the case of rural municipalities also hindered the development of metropolitan areas in Romania. Nevertheless, the metropolitan areas already in existence are running a number of projects that are beneficial for most members of the association. Such positive examples may trigger the creation of the other metropolitan areas. Although the existing metropolitan areas did not yield spectacular results, the time passed since their foundation is yet too short to correctly assess their usefulness and territorial meaning. For the moment, the following metropolitan areas exist in Romania: Iaşi, Oradea, Braşov, Constanţa, Bacău, Cluj-Napoca, Târgu Mureş and Craiova. Bucharest, Timişoara, Ploieşti and Galaţi-Brăila metropolitan areas are still in process of setting up.

Flight delay performance at Hartsfield-Jackson Atlanta International Airport

Directory of Open Access Journals (Sweden)

Grigoriy Yablonsky

2014-01-01

Full Text Available Purpose: The main objective of this paper is to determine the annual cyclical flight delays at Hartsfield-Jackson Atlanta International Airport. Then using other data such as annual precipitation, passenger and aircraft traffic volumes and other factors, we attempted to correlate these factors with overall delays. These data could assist airport management in predicting periods of flight delay.Design/methodology/approach: Data were taken and analyzed from the data base “Research and Innovation Technology Administration” (RITA for the years 2005-2011 for Hartsfield-Jackson Atlanta International Airport. The data included 2.8 million flights originating and departing from this airport. Data were also gathered from the National Oceanic and Atmospheric Administration (NOAA showing precipitation. Additional data were gathered from the FAA regarding delay causes, number and types of delays and changes to the infrastructure of ATL airportFindings: There is a repeatable annual pattern of delays at ATL that can be modeled using delay data from the Bureau of Transportation Statistics. This pattern appears to be caused primarily by the frequency and amount of precipitation that falls at ATL and by the amount of flights that arrive and depart at ATL.Originality/value: This information could assist airport operations personnel, FAA air traffic controllers and airlines in anticipating and mitigating delays at specific times of the year.

Impacts of Combined Cooling, Heating and Power Systems, and Rainwater Harvesting on Water Demand, Carbon Dioxide, and NOx Emissions for Atlanta.

Science.gov (United States)

James, Jean-Ann; Sung, Sangwoo; Jeong, Hyunju; Broesicke, Osvaldo A; French, Steven P; Li, Duo; Crittenden, John C

2018-01-02

The purpose of this study is to explore the potential water, CO 2 and NO x emission, and cost savings that the deployment of decentralized water and energy technologies within two urban growth scenarios can achieve. We assess the effectiveness of urban growth, technological, and political strategies to reduce these burdens in the 13-county Atlanta metropolitan region. The urban growth between 2005 and 2030 was modeled for a business as usual (BAU) scenario and a more compact growth (MCG) scenario. We considered combined cooling, heating and power (CCHP) systems using microturbines for our decentralized energy technology and rooftop rainwater harvesting and low flow fixtures for the decentralized water technologies. Decentralized water and energy technologies had more of an impact in reducing the CO 2 and NO x emissions and water withdrawal and consumption than an MCG growth scenario (which does not consider energy for transit). Decentralized energy can reduce the CO 2 and NO x emissions by 8% and 63%, respectively. Decentralized energy and water technologies can reduce the water withdrawal and consumption in the MCG scenario by 49% and 50% respectively. Installing CCHP systems on both the existing and new building stocks with a net metering policy could reduce the CO 2 , NO x , and water consumption by 50%, 90%, and 75% respectively.

CENTEC: Center for Excellence in Neuroergonomics, Technology, and Cognition

Science.gov (United States)

2016-10-26

Quantitative investigations of axonal and dendritic arbors: development, structure, function and pathology . The Neuroscientist, In Press (2014... Forensic Science Meeting. Atlanta, GA. Boehm-Davis, D. A. (2012, February). Can you control your bias? Subliminal actions of the brain that can affect...your case work. Lecture presented at the American Academy of Forensic Science Meeting. Atlanta, GA. Also presented (2012, April). At the Chesapeake

PREFACE TO SPECIAL SECTION: SOUTHERN OXIDANTS STUDY 1999 ATLANTA SUPERSITE PROJECT (SOS3)

Science.gov (United States)

The Atlanta Supersites Project consisted of a one-month intensive field program to compare advanced methods for measurement of PM2.5 mass, chemical composition, including single particle composition in real-time, and aerosol precursor species. The project was the first of EPA's ...

Fútbol, etnicidad y otredad: el Club Atlético Atlanta de Buenos Aires

Directory of Open Access Journals (Sweden)

Raanan Rein

2014-06-01

While most historians would agree as to the centrality of soccer in Latin American societies, very little has been written on ethnicity and sports in such immigrant societies as Argentina and Brazil. This article focuses on the Club Atlético Atlanta, located in the neighborhood of Villa Crespo. Although populated by various ethnic groups, Villa Crespo has long been considered a Jewish neighborhood. During the second half of the 20th century, there has been a conspicuous Jewish presence among the fans, administrators and presidents of the Atlanta soccer club, to the extent that fans of rival teams often chant anti-Semitic slogans during matches. For the first immigrant generation, belonging to this club was a way of becoming Argentines. For the next generation, it was a way of maintaining ethnic Jewish identity, while for the third it has become a family tradition.

Influence of Intimate Partner Violence on Domestic Relocation in Metropolitan and Non-Metropolitan Young Australian Women

NARCIS (Netherlands)

Dillon, Gina; Hussain, Rafat; Kibele, Eva; Rahman, Saifur; Loxton, Deborah

2016-01-01

Data from a national, population-based longitudinal study of Australian women (26-34 years) were analyzed to investigate the association between domestic relocation and multiple explanatory factors, namely intimate partner violence (IPV), metropolitan versus non-metropolitan residence, education,

Newcastle disease B1 vaccine strain in wild rock pigeons in Atlanta, Georgia

Science.gov (United States)

From June to October of 2012, samples were collected from wild Rock Pigeons (Columba livia) in urban neighborhoods of Atlanta, Georgia to ascertain the prevalence of pigeon paramyxovirus serotype-1 (PPMV-1). PPMV-1 strains are a subset of avian paramyxovirus serotype-1 (APMV-1) commonly isolated fro...

77 FR 65125 - Approval and Promulgation of Implementation Plans; Georgia 110(a)(1) and (2) Infrastructure...

Science.gov (United States)

2012-10-25

... certain substantive issues in the infrastructure SIP submission in a reasonable fashion. It is appropriate... Marketing Area. Program. 4. HOV lanes on I-75 and I-85 Atlanta Metropolitan 6/17/96........ 4/26/99...

DRINKING WATER TURBIDITY AND EMERGENCY DEPARTMENT VISITS FOR GASTROINTESTINAL ILLNESS IN ATLANTA, 1993 – 2004

Science.gov (United States)

Tinker, Sarah C.; Moe, Christine L.; Klein, Mitchel; Flanders, W. Dana; Uber, Jim; Amirtharajah, Appiah; Singer, Philip; Tolbert, Paige E.

2013-01-01

Background The extent to which drinking water turbidity measurements indicate the risk of gastrointestinal illness is not well-understood. Despite major advances in drinking water treatment and delivery, infectious disease can still be transmitted through drinking water in the U.S., and it is important to have reliable indicators of microbial water quality to inform public health decisions. The objective of our study was to assess the relationship between gastrointestinal illness, quantified through emergency department visits, and drinking water quality, quantified as raw water and filtered water turbidity measured at the treatment plant. Methods We examined the relationship between turbidity levels of raw and filtered surface water measured at eight major drinking water treatment plants in the metropolitan area of Atlanta, Georgia, and over 240 000 emergency department visits for gastrointestinal illness during 1993–2004 among the population served by these plants. We fit Poisson time-series statistical regression models that included turbidity in a 21-day distributed lag and that controlled for meteorological factors and long-term time trends. Results For filtered water turbidity, the results were consistent with no association with emergency department visits for gastrointestinal illness. We observed a modest association between raw water turbidity and emergency department visits for gastrointestinal illness. This association was not observed for all treatment plants in plant-specific analyses. Conclusions Our results suggest that source water quality may contribute modestly to endemic gastrointestinal illness in the study area. The association between turbidity and emergency department visits for gastrointestinal illness was only observed when raw water turbidity was considered; filtered water turbidity may not serve as a reliable indicator of modest pathogen risk at all treatment plants. PMID:18941478

77 FR 31355 - Environmental Impacts Statements; Notice of Availability

Science.gov (United States)

2012-05-25

...: https://cdx.epa.gov . EIS No. 20120157, Final EIS, FTA, GA, Tier 1--Atlanta Beltline City of Atlanta..., Review Period Ends: 06/ 25/2012, Contact: Brian Smart 404-865-5600. EIS No. 20120158, Draft EIS, USACE...

Plaza Central Peachtree Atlanta-(EE.UU.

Directory of Open Access Journals (Sweden)

Portman, John

1976-10-01

Full Text Available This 70-storey hotel has been constructed to meet the requirements of the city of Atlanta which needed a building with a sufficient room capacity and adequate premises for Conventions. On a structure of reinforced concrete which serves as a base and in which the common areas are situated rises a big cylindric tower, covered with coloured glass and which contains the 1.100 rooms. 230 m above ground level, the construction is crowned with a roof top cocktail lounge and a revolving restaurant with a splendid view of the city. Among the most noteworthy characteristics of this hotel is the elegantly decorated entrance hall —atrium shaped and 7 storeys high— with a pond in the centre. Further premises worth mentioning in view of their design and dimensions are the great ball room, coffee-shops and luxurious restaurants, one of which is planned in different levels and in which the most impressive feature is a 30 m high waterfall.Este edificio de setenta plantas se construyó para responder a las necesidades hoteleras de la ciudad de Atlanta, que precisaba de una instalación con suficiente capacidad de habitaciones y preparación para albergar Convenciones. Sobre una estructura de hormigón armado, que sirve de base y en la que se sitúan las zonas comunes, se eleva una gran torre cilíndrica, recubierta de vidrio coloreado reflectante, destinada a distribuir las 1.100 habitaciones con las que cuenta el edificio. La construcción se corona, a 230 m de la cimentación, con una sala para cócteles y un restaurante giratorio desde el que se domina una espléndida vista del contorno. El edificio dispone de importantes servicios comunes, entre los que cabe destacar el hall de entrada —a modo de atrio y con una altura equivalente a siete plantas—, que está dotado de un gran estanque y variados elementos de gran efecto decorativo. Otros servicios notables por su diseño y dimensiones son la gran sala de baile, y las cafeterías, comedores y

1996 Olympic and Paralympic Games : event study

Science.gov (United States)

1997-05-02

The Atlanta metropolitan region is the location of one of the most ambitious intelligent transportation system (ITS) deployments in the United States. The system links eight regional agencies and includes a transportation management center (TMC), six...

1996 Olympic and Paralympic Games event study : executive summary

Science.gov (United States)

1997-05-01

The Atlanta metropolitan region is the location of one of the most ambitious intelligent transportation system (ITS) deployments in the United States. The system links eight regional agencies and includes a transportation management center (TMC), six...

FAA (Federal Aviation Administration) Air Traffic Activity FY 1985.

Science.gov (United States)

1985-09-30

N I TOL 79 0 0 79 0 TIFFIN OH N TOL 39 0 1 38 0 TIFTON GA N VAD 81 0 0 75 6 TINS AIRPARK TI N I AUS 1611 0 0 1611 0 T IPTON AAF FT MEADE NO " I SuI 35...Peachtree Street, N.E., Atlanta, GA 519 E. Wisconsin Avenue, Milwaukee, WI 30303, FTS 242-6946, Commercial 404-221-6947. 53202, FTS 362-1300, Commercial 414...AIRCRAFT HANDLED 1363320 629611 233612 339923 160174 ATLANTA GEORGIA GA DEPARTURES 925351 435018 145193 298802 46338 DOMESTIC OVERS 435850 209924 39065

Fine-resolution Modeling of Urban-Energy Systems' Water Footprint in River Networks

Science.gov (United States)

McManamay, R.; Surendran Nair, S.; Morton, A.; DeRolph, C.; Stewart, R.

2015-12-01

Characterizing the interplay between urbanization, energy production, and water resources is essential for ensuring sustainable population growth. In order to balance limited water supplies, competing users must account for their realized and virtual water footprint, i.e. the total direct and indirect amount of water used, respectively. Unfortunately, publicly reported US water use estimates are spatially coarse, temporally static, and completely ignore returns of water to rivers after use. These estimates are insufficient to account for the high spatial and temporal heterogeneity of water budgets in urbanizing systems. Likewise, urbanizing areas are supported by competing sources of energy production, which also have heterogeneous water footprints. Hence, a fundamental challenge of planning for sustainable urban growth and decision-making across disparate policy sectors lies in characterizing inter-dependencies among urban systems, energy producers, and water resources. A modeling framework is presented that provides a novel approach to integrate urban-energy infrastructure into a spatial accounting network that accurately measures water footprints as changes in the quantity and quality of river flows. River networks (RNs), i.e. networks of branching tributaries nested within larger rivers, provide a spatial structure to measure water budgets by modeling hydrology and accounting for use and returns from urbanizing areas and energy producers. We quantify urban-energy water footprints for Atlanta, GA and Knoxville, TN (USA) based on changes in hydrology in RNs. Although water intakes providing supply to metropolitan areas were proximate to metropolitan areas, power plants contributing to energy demand in Knoxville and Atlanta, occurred 30 and 90km outside the metropolitan boundary, respectively. Direct water footprints from urban landcover primarily comprised smaller streams whereas indirect footprints from water supply reservoirs and energy producers included

Metropolitan migration and population growth in selected developing countries.

Science.gov (United States)

1983-01-01

The purpose of this article is to estimate the components of metropolitan population growth in selected developing countries during 1960-1970 period. The study examines population growth in 26 cities: 5 are in Africa, 8 in Asia, and 13 in Latin America, using data from national census publications. These cities in general are the political capitals of their countries, but some additional large cities were selected in Brazil, Mexico, and South Africa. All cities, at the beginning of the 1960-1970 decade had over 500,000 population; Accra, the only exception, reached this population level during the 1960s. Some cities had over 4 million residents in 1970. Net migration contributed about 37% to total metropolitan population growth; the remainder of the growth is attributable to natural increase. Migration has a much stronger impact on metropolitan growth than suggested by the above figure: 1) Several metropolitan areas, for various reasons, are unlikely to receive many migrants; without those cities, the share of metropolitan growth from net migration is 44%. 2) Estimates of the natural increase of migrants after their arrival in the metropolitan areas, when added to migration itself, changes the total contribution of migration to 49% in some metropolitan areas. 3) Even where net migration contributes a smaller proportion to metropolitan growth than natural increase, the rates of net migration are generally high and should be viewed in the context of rapid metropolitan population growth from natural increase alone. Finally, the paper also compares the components of metropolitan growth with the components of growth in the remaining urban areas. The results show that the metropolitan areas, in general, grow faster than the remaining urban areas, and that this more rapid growth is mostly due to a higher rate of net migration. Given the significance of migration for metropolitan growth, further investigations of the effects of these migration streams, particularly with

Filling some black holes: modeling the connection between urbanization, infrastructure, and global service intensity in 112 metropolitan regions across the world

OpenAIRE

Van De Vijver, Elien; Derudder, Ben; Bassens, David; Witlox, Frank

2012-01-01

This empirical article combines insights from previous research on the level of knowledge-intensive service in metropolitan areas with the aim to develop an understanding of the spatial structure of the global service economy. We use a stepwise regression model with GaWC’s measure of globalized service provisioning as the dependent variable and a range of variables focusing on population, infrastructure, urban primacy, and national regulation as independent variables. The discussion of the re...

Acute pancreatitis: reflections through the history of the Atlanta Consensus

OpenAIRE

Torres López, Ana María; Hoyos Duque, Sergio Iván

2014-01-01

Acute pancreatitis is an inflammatory process with systemic and local repercussions. Most cases are mild with low mortality rate, but 20% of the patients have severe pancreatitis with a mortality rate up to 30%. Through the years the medical community has tried to reach consensus about this disease in order to better understand, classify and treat it. The most important of these has been known as the Atlanta Consensus 1992, in use for many years. However, it has been recently the subject of v...

The role of the arginine metabolome in pain: implications for sickle cell disease

Directory of Open Access Journals (Sweden)

Bakshi N

2016-03-01

Full Text Available Nitya Bakshi,1–2 Claudia R Morris3–6 1Division of Pediatric Hematology-Oncology, Department of Pediatrics, Emory University School of Medicine, Atlanta, GA, USA; 2Aflac Cancer and Blood Disorders Center, Children’s Healthcare of Atlanta, Atlanta, GA, USA; 3Division of Pediatric Emergency Medicine, Department of Pediatrics, Emory University School of Medicine, Atlanta, GA, USA; 4Department of Emergency Medicine, Emory University School of Medicine, Atlanta, GA, USA; 5Emory-Children’s Center for Cystic Fibrosis and Airways Disease Research, Emory University School of Medicine, Atlanta, GA, USA; 6Pediatric Emergency Medicine, Children’s Healthcare of Atlanta, Atlanta, GA, USA Abstract: Sickle cell disease (SCD is the most common hemoglobinopathy in the US, affecting approximately 100,000 individuals in the US and millions worldwide. Pain is the hallmark of SCD, and a subset of patients experience pain virtually all of the time. Of interest, the arginine metabolome is associated with several pain mechanisms highlighted in this review. Since SCD is an arginine deficiency syndrome, the contribution of the arginine metabolome to acute and chronic pain in SCD is a topic in need of further attention. Normal arginine metabolism is impaired in SCD through various mechanisms that contribute to endothelial dysfunction, vaso-occlusion, pulmonary complications, risk of leg ulcers, and early mortality. Arginine is a semiessential amino acid that serves as a substrate for protein synthesis and is the precursor to nitric oxide (NO, polyamines, proline, glutamate, creatine, and agmatine. Since arginine is involved in multiple metabolic processes, a deficiency of this amino acid has the potential to disrupt many cellular and organ functions. NO is a potent vasodilator that is depleted in SCD and may contribute to vaso-occlusive pain. As the obligate substrate for NO production, arginine also plays a mechanistic role in SCD-related pain, although its

Ensemble simulations to study the impact of land use change of Atlanta to regional climate

Science.gov (United States)

Liu, P.; Hu, Y.; Stone, B.; Vargo, J.; Nenes, A.; Russell, A.; Trail, M.; Tsimpidi, A.

2012-12-01

Studies show that urban areas may be the "first responders" to climate change (Rosenzweig et al., 2010). Of particular interest is the potential increased temperatures in urban areas, due to use of structures and surfaces that increase local heating, and how that may impact health, air quality and other environmental factors. In response, interest has grown as to how the modification of land use in urban areas, in order to mitigate the adverse effects of urbanization can serve to reduce local temperatures, and how climate is impacted more regionally. Studies have been conducted to investigate the impact of land use change on local or regional climate by dynamic downscaling using regional climate models (RCMs), the boundary conditions (BCs) and initial conditions (ICs) of which result from coarser-resolution reanalysis data or general circulation models (GCMs). However, few studies have focused on demonstrating whether the land use change in local areas significantly impacts the climate of the larger region of the domain, and the spatial scale of the impact from urban-scale changes. This work investigated the significance of the impact of land use change in the Atlanta city area on different scales, using a range of modeling resolutions, including the contiguous US (with 36km resolution), the southeastern US (with 12km resolution) and the state of Georgia (with 4km resolution). We used WRF version 3.1.1 with and ran continuous from June to August of a simulated year 2050, driven by GISS ModelE with inputs corresponding to RCP4.5. During the simulation, spectral nudging is used in the 36km resolution domain to maintain the climate patterns with scales larger than 2000km. Two-way nesting is also used in order to take into account the feedback of nesting domains across model domains. Two land use cases over the Atlanta city are chosen. For the base case, most of the urban area of Atlanta is covered with forest; while for the second, "impervious" case, all the urban

Metropolitan water management

National Research Council Canada - National Science Library

Milliken, J. Gordon; Taylor, Graham C

1981-01-01

This monograph is intended to inform interested and capable pesons, who happen not to be specialists in water resources planning, of the issues and alternative strategies related to metropolitan water supply...

77 FR 24399 - Approval and Promulgation of Implementation Plans; Georgia; Atlanta; Ozone 2002 Base Year...

Science.gov (United States)

2012-04-24

... Promulgation of Implementation Plans; Georgia; Atlanta; Ozone 2002 Base Year Emissions Inventory AGENCY... approve the ozone 2002 base year emissions inventory, portion of the state implementation plan (SIP... technology (RACT), contingency measures, a 2002 base- year emissions inventory and other planning SIP...

A Study of the Role of Clouds in the Relationship Between Land Use/Land Cover and the Climate and Air Quality of the Atlanta Area

Science.gov (United States)

Kidder, Stanley Q.; Hafner, Jan

2001-01-01

The goal of Project ATLANTA is to derive a better scientific understanding of how land cover changes associated with urbanization affect climate and air quality. In this project the role that clouds play in this relationship was studied. Through GOES satellite observations and RAMS modeling of the Atlanta area, we found that in Atlanta (1) clouds are more frequent than in the surrounding rural areas; (2) clouds cool the surface by shading and thus tend to counteract the warming effect of urbanization; (3) clouds reflect sunlight, which might other wise be used to produce ozone; and (4) clouds decrease biogenic emission of ozone precursors, and they probably decrease ozone concentration. We also found that mesoscale modeling of clouds, especially of small, summertime clouds, needs to be improved and that coupled mesoscale and air quality models are needed to completely understand the mediating role that clouds play in the relationship between land use/land cover change and the climate and air quality of Atlanta. It is strongly recommended that more cities be studied to strengthen and extend these results.

‘New urbanism' or metropolitan-level centralization?

DEFF Research Database (Denmark)

Næss, Petter

2011-01-01

Based on a study in Copenhagen Metropolitan Area, this paper compares the influences of macro-level and micro-level urban form characteristics on the respondents' traveling distance by car on weekdays. The Copenhagen study shows that metropolitan-scale urban structural variables generally exert...... stronger influences than neighborhood-scale built environment characteristics on the amount of car travel. In particular, the location of the residence relative to the main city center of the metropolitan region shows a strong effect. Some local scale variables often mentioned in the literature...

Multilevel Hierarchical Modeling of Benthic Macroinvertebrate Responses to Urbanization in Nine Metropolitan Regions across the Conterminous United States

Science.gov (United States)

Kashuba, Roxolana; Cha, YoonKyung; Alameddine, Ibrahim; Lee, Boknam; Cuffney, Thomas F.

2010-01-01

Multilevel hierarchical modeling methodology has been developed for use in ecological data analysis. The effect of urbanization on stream macroinvertebrate communities was measured across a gradient of basins in each of nine metropolitan regions across the conterminous United States. The hierarchical nature of this dataset was harnessed in a multi-tiered model structure, predicting both invertebrate response at the basin scale and differences in invertebrate response at the region scale. Ordination site scores, total taxa richness, Ephemeroptera, Plecoptera, Trichoptera (EPT) taxa richness, and richness-weighted mean tolerance of organisms at a site were used to describe invertebrate responses. Percentage of urban land cover was used as a basin-level predictor variable. Regional mean precipitation, air temperature, and antecedent agriculture were used as region-level predictor variables. Multilevel hierarchical models were fit to both levels of data simultaneously, borrowing statistical strength from the complete dataset to reduce uncertainty in regional coefficient estimates. Additionally, whereas non-hierarchical regressions were only able to show differing relations between invertebrate responses and urban intensity separately for each region, the multilevel hierarchical regressions were able to explain and quantify those differences within a single model. In this way, this modeling approach directly establishes the importance of antecedent agricultural conditions in masking the response of invertebrates to urbanization in metropolitan regions such as Milwaukee-Green Bay, Wisconsin; Denver, Colorado; and Dallas-Fort Worth, Texas. Also, these models show that regions with high precipitation, such as Atlanta, Georgia; Birmingham, Alabama; and Portland, Oregon, start out with better regional background conditions of invertebrates prior to urbanization but experience faster negative rates of change with urbanization. Ultimately, this urbanization

Determination of provincial logistics capability for South African provinces

CSIR Research Space (South Africa)

Mashoko, L

2012-10-10

Full Text Available Production January 2013/ Vol. 39 Life cycle inventory of electricity cogeneration from bagasse in the South African sugar industry L. Mashoko a , C. Mbohwa b,* , V.M. Thomas c,d a Logistics and Quantitative Methods, CSIR Built Environment..., Georgia Institute of Technology, Atlanta, GA 30332, USA d School of Public Policy, Georgia Institute of Technology, Atlanta, GA 30332, USA Abstract The South African sugar industry has a potential for cogeneration of steam and electricity using...

77 FR 24440 - Approval and Promulgation of Implementation Plans; Georgia; Atlanta; Ozone 2002 Base Year...

Science.gov (United States)

2012-04-24

... ENVIRONMENTAL PROTECTION AGENCY 40 CFR Part 52 [EPA-R04-OAR-2010-0021(b); FRL-9661-9] Approval and Promulgation of Implementation Plans; Georgia; Atlanta; Ozone 2002 Base Year Emissions Inventory AGENCY... 2002 base year emissions inventory portion of the state implementation plan (SIP) revision submitted by...

Reconceptualization Sexuality and Rethinking Homophobia in Metropolitan Campus Spaces

Science.gov (United States)

Deniz, Caglar

2017-01-01

The Metropolitan city gives non-metropolitan students an opportunity to meet new social groups. In this article, the perceptions of sexuality of those students who come from provincial areas to a metropolitan city for university education are examined within a framework of semi-structured interviews. The study on which this article is based used a…

Acute pancreatitis: reflections through the history of the Atlanta Consensus

Directory of Open Access Journals (Sweden)

Torres López, Ana María

2014-10-01

Full Text Available Acute pancreatitis is an inflammatory process with systemic and local repercussions. Most cases are mild with low mortality rate, but 20% of the patients have severe pancreatitis with a mortality rate up to 30%. Through the years the medical community has tried to reach consensus about this disease in order to better understand, classify and treat it. The most important of these has been known as the Atlanta Consensus 1992, in use for many years. However, it has been recently the subject of various proposals for changes and updates, which are discussed in this review article.

Describing Peripancreatic Collections According to the Revised Atlanta Classification of Acute Pancreatitis An International Interobserver Agreement Study

NARCIS (Netherlands)

Bouwense, Stefan A.; van Brunschot, Sandra; van Santvoort, Hjalmar C.; Besselink, Marc G.; Bollen, Thomas L.; Bakker, Olaf J.; Banks, Peter A.; Boermeester, Marja A.; Cappendijk, Vincent C.; Carter, Ross; Charnley, Richard; van Eijck, Casper H.; Freeny, Patrick C.; Hermans, John J.; Hough, David M.; Johnson, Colin D.; Laméris, Johan S.; Lerch, Markus M.; Mayerle, Julia; Mortele, Koenraad J.; Sarr, Michael G.; Stedman, Brian; Vege, Santhi Swaroop; Werner, Jens; Dijkgraaf, Marcel G.; Gooszen, Hein G.; Horvath, Karen D.; Aghdassi, Ali A.; van Enckevort, Conny C.; de Haas, Robbert J.; Horsthuis, Karin; van der Jagt, Michel F.; Kok, Niels F.; Koopmanschap, Desirée H.; Koppe, Manuel J.; Krak, Nanda C.; Lane, Charlotte E.; Lee, Jean H.; de Lussanet, Q.; Saunders, Michael D.; Swaroop Vege, Santhi; van der Vlugt, Manon; van Wageningen, Bas; Wassenaar, Eelco; van Wely, Bob J.; Wijnhoven, Bas P.

2017-01-01

Objectives: Severe acute pancreatitis is associated with peripancreatic morphologic changes as seen on imaging. Uniform communication regarding these morphologic findings is crucial for accurate diagnosis and treatment. For the original 1992 Atlanta classification, interobserver agreement is poor.

Metropolitan City: the Italian experience

Directory of Open Access Journals (Sweden)

Giuseppe Franco Ferrari

2013-12-01

Full Text Available Due to the fact that the definitions of territorial organization are no longer adequate, the concept of “metropolitan areas” arises as a solution to resolve such deficit. This study shows the beginnings of this figure in Italy and the problems of identification and delimitation caused by the abstraction of the norms, therefore entailing a difficult implementation of the concept of metropolitan cities. By identifying these obstacles, this paper presents an analysis where it is possible to ensure compliance with this new reality in the near future.

Metropolitan Optical Networks 1995 Annual Report

DEFF Research Database (Denmark)

Kristensen, Martin; Jouanno, Jean-Marc; Malone, Kevin

1996-01-01

The annual report describes the research carried out in the ACTS-project METON (Metropolitan Optical Networks) in 1995. L.M. Ericsson is prime contractor and 12 partners including DTU is involved in the project.......The annual report describes the research carried out in the ACTS-project METON (Metropolitan Optical Networks) in 1995. L.M. Ericsson is prime contractor and 12 partners including DTU is involved in the project....

Initiatives towards Carbon Neutrality in the Helsinki Metropolitan Area

Directory of Open Access Journals (Sweden)

Karna Dahal

2016-07-01

Full Text Available Carbon neutrality represents one climate strategy adopted by many cities, including the city of Helsinki and the Helsinki metropolitan area in Finland. This study examines initiatives adopted by the Helsinki metropolitan area aimed at reducing energy-related carbon emissions and achieving carbon neutrality through future actions. Various sectorial energy consumption rates per year and carbon emissions from various sectors within the city of Helsinki and the metropolitan area were extracted from an online database and re-calculated (in GWh, MWh/inhabitant and MtCO2e, KtCO2e/inhabitant. We employed a backcasting scenario method to explore the various carbon reduction measures in the Helsinki metropolitan area. About 96% of the emissions produced in the Helsinki metropolitan area are energy-based. District heating represents the primary source of emissions, followed by transportation and electricity consumption, respectively. We also found that accomplishing the carbon reduction strategies of the Helsinki metropolitan area by 2050 remains challenging. Technological advancement for clean and renewable energy sources, smart policies and raising awareness resulting in behavioral changes greatly affect carbon reduction actions. Thus, strong political commitments are also required to formulate and implement stringent climate actions.

African urbanization in metropolitan South Africa--differential urbanization perspectives.

Science.gov (United States)

Geyer, H S

1993-07-01

"As a potentially important urban development policy consideration, attention is focused in this paper on differential urbanization trends in South Africa at the metropolitan level. Recent informal urban settlement patterns of the African population within the major metropolitan areas are contrasted against these differential urbanization trends to determine the implications of both for residential development in the metropolitan areas during the post-apartheid era." excerpt

Water, Air Emissions, and Cost Impacts of Air-Cooled Microturbines for Combined Cooling, Heating, and Power Systems: A Case Study in the Atlanta Region

Directory of Open Access Journals (Sweden)

Jean-Ann James

2016-12-01

Full Text Available The increasing pace of urbanization means that cities and global organizations are looking for ways to increase energy efficiency and reduce emissions. Combined cooling, heating, and power (CCHP systems have the potential to improve the energy generation efficiency of a city or urban region by providing energy for heating, cooling, and electricity simultaneously. The purpose of this study is to estimate the water consumption for energy generation use, carbon dioxide (CO2 and NOx emissions, and economic impact of implementing CCHP systems for five generic building types within the Atlanta metropolitan region, under various operational scenarios following the building thermal (heating and cooling demands. Operating the CCHP system to follow the hourly thermal demand reduces CO2 emissions for most building types both with and without net metering. The system can be economically beneficial for all building types depending on the price of natural gas, the implementation of net metering, and the cost structure assumed for the CCHP system. The greatest reduction in water consumption for energy production and NOx emissions occurs when there is net metering and when the system is operated to meet the maximum yearly thermal demand, although this scenario also results in an increase in greenhouse gas emissions and, in some cases, cost. CCHP systems are more economical for medium office, large office, and multifamily residential buildings.

Deprivation and mortality in non-metropolitan areas of England and Wales.

Science.gov (United States)

Jessop, E G

1996-10-01

To test the hypothesis that the relationship between deprivation and mortality is weaker among residents of non-metropolitan areas of England and Wales than among residents of metropolitan areas. This study compared mortality, expressed as standardised mortality ratios (SMRs), in residents of metropolitan and non-metropolitan districts at three levels of deprivation classified by an electoral ward deprivation score and by home and car ownership. SMRs were computed for all causes of death, for bronchitis and asthma (ICD9 codes 490-493), and for accident, violence, and poisoning (ICD9 codes 800-999). England and Wales. Members of the longitudinal study of the Office of Population Censuses and Surveys, a quasi-random 1% sample of the population of England and Wales. There was an association between deprivation and mortality which was clear for all cause mortality, more noticeable for respiratory disease, and less clear for deaths from accident, violence, and poison. In general, the results showed a remarkable similarity between metropolitan and non-metropolitan areas. This study does not support the hypothesis that the relationship between mortality and deprivation differs between residents of metropolitan and non-metropolitan areas of England and Wales.

Urban Data Book : Volume 1. Urban Data - Atlanta-Miami

Science.gov (United States)

1975-11-01

A quick reference compilation of certain population, socio-economic, employment, and modal split characteristics of the 35 largest Standard Metropolitan Statistical Areas (SMSA) in the United States is presented. The three basic groups or urban data ...

Metropolitan Optical Networks 1996 Annual Report

DEFF Research Database (Denmark)

Kristensen, Martin; Jouanno, Jean-Marc; Malone, Kevin

1997-01-01

The report desribes the reasearch carried out in the ACTS-project METON (Metropolitan Optical Networks) in 1996. L.M. Ericsson is prime contractor and 12 partners are involved in the project including DTU, i.e. EMI and MIC.......The report desribes the reasearch carried out in the ACTS-project METON (Metropolitan Optical Networks) in 1996. L.M. Ericsson is prime contractor and 12 partners are involved in the project including DTU, i.e. EMI and MIC....

78 FR 28940 - Environmental Impact Statement for the Atlanta to Charlotte Portion of the Southeast High Speed...

Science.gov (United States)

2013-05-16

... federal High-Speed Intercity Passenger Rail (HSIPR) program and includes the development of a Passenger.... Background The Atlanta-Charlotte Corridor faces mobility challenges. Transportation demand and travel growth... travel time and reliability, provide another reliable mode choice, create jobs, reduce dependence on...

Injuries to Aboriginal populations living on- and off-reserve in metropolitan and non-metropolitan areas in British Columbia, Canada: Incidence and trends, 1986-2010

Directory of Open Access Journals (Sweden)

Mariana Brussoni

2016-05-01

Full Text Available Abstract Background Disparities in injury rates between Aboriginal and non-Aboriginal populations in British Columbia (BC are well established. Information regarding the influence of residence on disparities is scarce. We sought to fill these gaps by examining hospitalization rates for all injuries, unintentional injuries and intentional injuries across 24 years among i Aboriginal and total populations; ii populations living in metropolitan and non-metropolitan areas; and iii Aboriginal populations living on- and off-reserve. Methods We used data spanning 1986 through 2010 from BC’s universal health care insurance plan, linked to vital statistics databases. Aboriginal people were identified by insurance premium group and birth and death record notations, and their residence was determined by postal code. “On-reserve” residence was established by postal code areas associated with an Indian reserve or settlement. Health Service Delivery Areas (HSDAs were classified as “metropolitan” if they contained a population of at least 100,000 with a density of 400 or more people per square kilometre. We calculated the crude hospitalization incidence rate and the Standardized Relative Risk (SRR of hospitalization due to injury standardizing by gender, 5-year age group, and HSDA. We assessed cumulative change in SRR over time as the relative change between the first and last years of the observation period. Results Aboriginal metropolitan populations living off-reserve had the lowest SRR of injury (2.0, but this was 2.3 times greater than the general British Columbia metropolitan population (0.86. For intentional injuries, Aboriginal populations living on-reserve in non-metropolitan areas were at 5.9 times greater risk than the total BC population. In general, the largest injury disparities were evident for Aboriginal non-metropolitan populations living on-reserve (SRR 3.0; 2.5 times greater than the general BC non-metropolitan population (1

Teacher Morale in the Atlanta Public Schools: Spring 1990. Report No. 4, Volume 25, 11/91.

Science.gov (United States)

Fraser, Lowrie A.

A study was done of Atlanta (Georgia) public school teacher morale in May of 1990. About 40 percent of the teaching staff (1,520 teachers) voluntarily completed a 91-item questionnaire that contained subsets of questions from the Maslach Burnout Inventory and three subscales of emotional exhaustion, departmentalization, and personal…

Preventing the repetition: Or, what Los Angeles' experience in water management can teach Atlanta about urban water disputes

Science.gov (United States)

Feldman, David L.

2009-04-01

Southern California's water history is an epic story with larger-than-life characters and ambitions and abundant hubris. Students of water policy might reasonably ask: Does this story, while unique to greater Los Angeles, hold lessons for other metropolises experiencing water conflict caused by explosive growth? We examine this question by considering similarities between the challenges facing Atlanta, Georgia, one of the nation's fastest growing cities in the 21st century, with those of Los Angeles. We focus on junctures where important decisions regarding water were made and how these decisions continue to challenge both cities' futures. Atlanta's financial, cultural, and environmental imprint on its surrounding region share remarkable similarities with Los Angeles' influence trajectory: it is the largest city in the southeast, a principal transportation and business hub, and it is embroiled in water conflict with nearby communities and adjoining states.

The influence of population on the economic efficiency of the metropolitan governance

Directory of Open Access Journals (Sweden)

Yuriy V. Pavlov

2017-01-01

Full Text Available Research purpose. In order to implement the optimal metropolitan governance model, it is important to understand the conditions under which this or that model is economically effective. There is a need to develop a quantitatively justified methodology for choosing the optimal metropolitan governance model for different types of metropolitan areas. It has been emphasized in some federal documents of Russia, for example, in the “Recommendations for the selection of pilot projects for approbation and improvement of mechanisms for managing the development of metropolitan areas in the Russian Federation”.Materials and methods. Domestic researchers (N. Zubarevich, K. Gonchar, etc. and foreign researchers (Glaeser Edward L., Nakamura, Ciccone A., Hall R., etc. carried out the study of quantitative relationships between the economic growth of cities and the characteristics of cities.However, for metropolitan areas, the analysis of the relationship has not yet been implemented between the outpacing economic growth of the metropolitan area relative to the average country values (labor productivity and GDP per capita, the institutional factor (the type of metropolitan governance model, andthe non-institutional factor (population size. To identify the dependencies we are interested in, we used the OECD statistical database and OECD researches to identify the metropolitan governance model in the sample of metropolitan areas in the world. The sample in this research was 87 metropolitan areas in Europe and was divided into groups, depending on the population and the introduced metropolitan governance model. For each group, a correlation-regression analysis was performed and a weighted average was calculated from the indexes of the economic growth. As the leading index of the economic growth, labor productivity was used, as the final - GDP per capita. Then a comparison was made between the real value of economic growth in each surveyed metropolitan area and

76 FR 31579 - Designation for the State of Georgia and State of Montana Areas

Science.gov (United States)

2011-06-01

... agency Headquarters location and telephone start end Georgia Atlanta, GA (229) 386-3141......... 7/1/2011 6/30/2014. Additional Location: Tifton, GA.... Montana Helena, MT (406) 761-2141 7/1/2011 6/30/2014...

Metropolitan planning from an international comparative perspective

DEFF Research Database (Denmark)

Galland, Daniel; Grønning, Marius

2016-01-01

policies, and thus also to the instrumental orientation within planning. A challenge stemming from this comparison is to understand how similar policies are implemented at a strategic and metropolitan level. Within the institutional framework of Copenhagen, the problem with the Finger Plan directive might...... (Faludi & van der Valk, 1994), thus integrating the archetypal land-use character of municipal plans and the strategic and growth-oriented pursuit of regional plans. A number of questions may be deduced: How explicit is the metropolitan scale? How local and how regional is the knowledge basis? Within......Over the last few years new practices of spatial strategy making at different planning scales have emerged. At the metropolitan level, such spatial strategies are reminiscent of national and supranational competitive strategies (e.g. EU policies) as well as ratifications of international...

Social vulnerability to heat in Greater Atlanta, USA: spatial pattern of heat, NDVI, socioeconomics and household composition

Science.gov (United States)

Sim, Sunhui

2017-10-01

The purpose of the article is evaluating spatial patterns of social vulnerability to heat in Greater Atlanta in 2015. The social vulnerability to heat is an index of socioeconomic status, household composition, land surface temperature and normalized differential vegetation index (NDVI). Land surface temperature and NDVI were derived from the red, NIR and thermal infrared (TIR) of a Landsat OLI/TIRS images collected on September 14, 2015. The research focus is on the variation of heat vulnerability in Greater Atlanta. The study found that heat vulnerability is highly clustered spatially, resulting in "hot spots" and "cool spots". The results show significant health disparities. The hotspots of social vulnerability to heat occurred in neighborhoods with lower socioeconomic status as measured by low education, low income and more poverty, greater proportion of elderly people and young children. The findings of this study are important for identifying clusters of heat vulnerability and the relationships with social factors. These significant results provide a basis for heat intervention services.

40 CFR 81.17 - Metropolitan Los Angeles Air Quality Control Region.

Science.gov (United States)

2010-07-01

... Quality Control Regions § 81.17 Metropolitan Los Angeles Air Quality Control Region. The Metropolitan Los Angeles Air Quality Control Region consists of the following territorial area (including the territorial... 40 Protection of Environment 17 2010-07-01 2010-07-01 false Metropolitan Los Angeles Air Quality...

Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

International Nuclear Information System (INIS)

Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

2015-01-01

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Modeling Metropolitan Detroit transit.

Science.gov (United States)

2010-10-01

"The seven-county Southeast Michigan region, that encompasses the Detroit Metropolitan Area, : ranks fifth in population among top 25 regions in the nation. It also ranks among bottom five in : the transit service provided, measured in miles or hours...

Radon in soil gas in the metropolitan region of Belo Horizonte, Brazil

International Nuclear Information System (INIS)

Teixeira, Giane Gariglio; Rocha, Zildete

2007-01-01

Radon, the natural radioactive gas is produced by the radioactive decay of uranium and thorium which are ubiquitous, specially in rock and soil. By diffusion and convection. Radon migrate from the rocks and to the groundwater and to the soil and from them the radon migrate through fissures, pipes and hales to the surface. Measurements were carried out in the Metropolitan Region of Belo Horizonte, whose greatest part of the in habitants occupies the great pre cambrian unit of the Iron Quadrangle of Minas Gerais denominated 'Granitic Gneissic Complex', composed of Archean rocks of age between 3,2 Ga and 2,6 Ga. The part in which occurs in the municipal area of Belo Horizonte was denominated as Complexo Belo Horizonte, whose most characteristics rocks named Gneiss Belo Horizonte. The soil gas radon concentrations were determined by using a samples and a continuos flow through ionization chamber detector AlphaGUARD PQ2000PRO - Genitron Instruments GmbH in a Instrumental Neutron Activation Analysis). Most results of radon concentration soil gas were in the range 10 kBq/m 3 to 50 kBq/m 3 . This values, according to the established Swedish Criteria are normal risk values. For soils classified as normal risk require 'radon protective construction', but the necessity of mitigation actions will depend on other factors, for example the soil permeability and rock type. (author)

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

Energy Technology Data Exchange (ETDEWEB)

2011-05-01

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

49 CFR 613.100 - Metropolitan transportation planning and programming.

Science.gov (United States)

2010-10-01

... programming. 613.100 Section 613.100 Transportation Other Regulations Relating to Transportation (Continued... Metropolitan Transportation Planning and Programming § 613.100 Metropolitan transportation planning and programming. The regulations in 23 CFR 450, subpart C, shall be followed in complying with the requirements of...

Planning Assignments of the Italian Metropolitan Cities. Early Trends

Directory of Open Access Journals (Sweden)

Giuseppe Mazzeo

2017-04-01

Full Text Available The last stage of the process of establishment of the Italian Metropolitan Cities, which took place in 2014, follows of a few decades the start of this institutional reform. In 1990, in fact, the Act 142 (Local Autonomies Reform had planned metropolitan areas as the administrative organization more suitable to provide these territories of structures for the management and the strategic development alike the best international models. The paper proposes to analyse the first activities taken by the Italian Metropolitan Cities in the sector of territorial government, three years after the enactment in 2014 of Act nr. 56.  Focal point of the analysis is the jurisdiction in the formation of two plans (the Strategic Plan and the Metropolitan Territorial Plan and the following relationships among them, in the logical assumption that between them a necessary and strict consistency there should be. In the first part, the paper analyses some factors characterizing the metropolitan areas and the functions that the law assigns to the new institution in the territorial government sector. The second part outlines the updated situation with regard to the formation of the sectoral tools (Strategic Plan, Territorial Plan and homogeneous zones. The third part analyses the progresses in three Metropolitan Cities taken as sample (Milan, Genoa and Bologna and, in general, to those of Southern Italy. In the last part, the paper exposes some considerations regarding the issues raised in the article, particularly about the innovativeness of the tools and the timeline for the implementation of the act.

Dental Care among Young Adults with Intellectual Disability

Science.gov (United States)

Kancherla, Vijaya; Van Naarden Braun, Kim; Yeargin-Allsopp, Marshalyn

2013-01-01

Dental care among young adults with intellectual disability (ID) is poorly documented and largely unmet. By using population-based data from the Metropolitan Atlanta Developmental Disabilities Follow-Up Study, we assessed factors associated with at least one or two dental visits per year among young adults with and without ID. Significantly fewer…

40 CFR 81.38 - Metropolitan Houston-Galveston Intrastate Air Quality Control Region.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 17 2010-07-01 2010-07-01 false Metropolitan Houston-Galveston... Designation of Air Quality Control Regions § 81.38 Metropolitan Houston-Galveston Intrastate Air Quality Control Region. The Metropolitan Houston-Galveston Intrastate Air Quality Control Region (Texas) has been...

Impact of the 2001 Tohoku-oki earthquake to Tokyo Metropolitan area observed by the Metropolitan Seismic Observation network (MeSO-net)

Science.gov (United States)

Hirata, N.; Hayashi, H.; Nakagawa, S.; Sakai, S.; Honda, R.; Kasahara, K.; Obara, K.; Aketagawa, T.; Kimura, H.; Sato, H.; Okaya, D. A.

2011-12-01

The March 11, 2011 Tohoku-oki earthquake brought a great impact to the Tokyo metropolitan area in both seismological aspect and seismic risk management although Tokyo is located 340 km from the epicenter. The event generated very strong ground motion even in the metropolitan area and resulted severe requifaction in many places of Kanto district. National and local governments have started to discuss counter measurement for possible seismic risks in the area taking account for what they learned from the Tohoku-oki event which is much larger than ever experienced in Japan Risk mitigation strategy for the next greater earthquake caused by the Philippine Sea plate (PSP) subducting beneath the Tokyo metropolitan area is of major concern because it caused past mega-thrust earthquakes, such as the 1703 Genroku earthquake (M8.0) and the 1923 Kanto earthquake (M7.9). An M7 or greater (M7+) earthquake in this area at present has high potential to produce devastating loss of life and property with even greater global economic repercussions. The Central Disaster Management Council of Japan estimates that an M7+ earthquake will cause 11,000 fatalities and 112 trillion yen (about 1 trillion US$) economic loss. In order to mitigate disaster for greater Tokyo, the Special Project for Earthquake Disaster Mitigation in the Tokyo Metropolitan Area was launched in collaboration with scientists, engineers, and social-scientists in nationwide institutions. We will discuss the main results that are obtained in the respective fields which have been integrated to improve information on the strategy assessment for seismic risk mitigation in the Tokyo metropolitan area; the project has been much improved after the Tohoku event. In order to image seismic structure beneath the Metropolitan Tokyo area we have developed Metropolitan Seismic Observation network (MeSO-net; Hirata et al., 2009). We have installed 296 seismic stations every few km (Kasahara et al., 2011). We conducted seismic

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Science.gov (United States)

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

non-metropolitan stars

Directory of Open Access Journals (Sweden)

Elena Grigoryeva

2017-06-01

Full Text Available Capitals gather constellations of bright and creative people, attracting them from the peripheries. Tchekhov’s sisters were anxious to get to Moscow, d’Artagnan – to Paris. Evtushenko, Shukshin and Gaidai ascended to the climax of their glory, having moved to the capital. Vampilov, Rasputin and Astafiev became internationally famous without leaving their home grounds, but having joined in the metropolitan whirl. In this regard, the architectural profession differs greatly from the literary and cinematographic ones. The destinies of the masters who fulfilled themselves far from the capital are different but equally bright and unique. The Irkutsk “Varangians”of the sixtieth – Voronezhsky, Bukh and Pavlov – built up their relations with geography in a different way:someone came from the capitals just for a few years that became the brightest, the most fruitful and the most interesting years of his creative life. But someone stayed in the non-metropolitan city for a long time and even forever. This subsection contains certain examples of self-fulfillment in the cities distant from the capitals: Khabarovsk, Irkutsk, Bratsk, Krasnoyarsk, Kemerovo and Anzhero-Sudzhensk.

Controls Over Materiel Procured for Direct Vendor Delivery

Science.gov (United States)

1995-02-10

National Guard, Company D, 560th Engineer Battalion, Bainbridge, GA Army National Guard, Company E, 121st Infantry Battalion, Tifton , GA Joint...Command, Fort Monmouth, NJ United States Army Forces Command, Atlanta, GA United States Army Materiel Command, Alexandria, VA United States Army...Fort Gillem, GA Headquarters, Fort Lee, Petersburg, VA Headquarters, Fort Riley, KS Headquarters, National Guard Bureau, Washington, DC Headquarters

Smart City, Metropolitan Areas and Competitiveness: the Case Study of Florence

Directory of Open Access Journals (Sweden)

Carmela Gargiulo

2015-07-01

Full Text Available In several urban contexts, the definition of a new development process is arising and it is focused on the use and the application of new technologies in different areas of the urban system. Such new development process is aimed at increasing life quality and local communities wellness and at promoting the creation of a more efficient and more sustainable urban system, as well as at making it more competitive. The issue of the reorganization of metropolitan areas is combined with such process, following the recent approval of the Delrio Law that establishes the Metropolitan City in Italy, as government authority of the metropolitan areas. Smart City, Metropolitan Areas and Competitiveness are the three topics of this paper, which aim is the description of the most innovative politics and initiatives adopted in the Metropolitan City of Florence that is proposed as a case study where such topics are combined.

40 CFR 81.63 - Metropolitan Fort Smith Interstate Air Quality Control Region.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 17 2010-07-01 2010-07-01 false Metropolitan Fort Smith Interstate Air... Air Quality Control Regions § 81.63 Metropolitan Fort Smith Interstate Air Quality Control Region. The Metropolitan Fort Smith Interstate Air Quality Control Region (Arkansas-Oklahoma) has been revised to consist...

Worthy Work, Unlivable Wages: The National Child Care Staffing Study, 1988-1997.

Science.gov (United States)

Whitebook, Marcy; Howes, Carollee; Phillips, Deborah

In 1988, the National Child Care Staffing Study first gathered information on staffing and quality from a sample of child care centers in five metropolitan areas--Atlanta, Boston, Detroit, Phoenix, and Seattle--and returned for updated information in 1992. In 1997, directors of the original sample of centers still in operation were contacted again…

Improving Eighth Grade Students' Reading Comprehension through the Use of the Collision Plus Arts-Integrated Program

Science.gov (United States)

Knight, Taneka L.

2016-01-01

African American and Latino students attending Title I schools in the metropolitan Atlanta area were not reading on grade level. The majority of students are low performing readers and minimally met the reading comprehension requirements. The 2015 average 8th grade reading score for these students was 246 out of 500. This applied dissertation was…

FAA Air Traffic Activity: Fiscal Year 1988

Science.gov (United States)

1988-01-01

TIFTON ............................................................................... (TMA) GA 32 0 0 32 0 VALDOSTA MUNICIPAL...275 Peach- Milwaukee Bookstore, Room 190, Federal Building, 517 E. tree Street, N.E., Atlanta, GA 30303; 404-221-6947 Wisconsin Avenue, Milwaukee... GA L 2 782686 WILMINGTON GR WILM .................................... DE N 82 211496 DALLAS/FT WORTH REGIONA ........... TX L 3 664268 FRESNO AIR

FAA Air Traffic Activity: FY 1990. Addendum.

Science.gov (United States)

1990-01-01

381 0 2 379 0 TIFTON .......................................................................... GA N 1 VAD 23 0 0 23 0 TIMS AIRPARK...Aviation Military GEORGIA-Continued TIFTON ............................................................................... (TMA) GA 23 1 0 0 23 0...ordering purposes. ATLANTA, GA KANSAS CITY, MO Room 100, Federal Building, 275 Peachtree Street, NE, P.O. Box 120 Bannister Mail, 5600 E. Bannister Road

23 CFR 450.336 - Applicability of NEPA to metropolitan transportation plans and programs.

Science.gov (United States)

2010-04-01

... the Secretary concerning a metropolitan transportation plan or TIP developed through the processes... 23 Highways 1 2010-04-01 2010-04-01 false Applicability of NEPA to metropolitan transportation... TRANSPORTATION PLANNING AND RESEARCH PLANNING ASSISTANCE AND STANDARDS Metropolitan Transportation Planning and...

Ethanol inhibits cold-menthol receptor TRPM8 by modulating its interactio with membrane phosphatidylinositol 4,5-bisphosphate

Czech Academy of Sciences Publication Activity Database

Benedikt, Jan; Teisinger, Jan; Vyklický st., Ladislav; Vlachová, Viktorie

ISBN 0-916110-40-0. [Neuroscince 2006. Annual meeting /36./. 14.10.2006-18.10.2006, Atlanta] R&D Projects: GA ČR(CZ) 305/06/0319; GA AV ČR(CZ) 309/04/0496; GA MŠk(CZ) 1M0517; GA MŠk LC554 Institutional research plan: CEZ:AV0Z50110509 Keywords : TRPV1, receptor , capsaicin Subject RIV: ED - Physiology

The food environment and adult obesity in US metropolitan areas.

Science.gov (United States)

Michimi, Akihiko; Wimberly, Michael C

2015-11-26

This research examines the larger-scale associations between obesity and food environments in metropolitan areas in the United States (US). The US Census County Business Patterns dataset for 2011 was used to construct various indices of food environments for selected metropolitan areas. The numbers of employees engaged in supermarkets, convenience stores, full service restaurants, fast food restaurants, and snack/coffee shops were standardised using the location quotients, and factor analysis was used to produce two uncorrelated factors measuring food environments. Data on obesity were obtained from the 2011 Behavioral Risk Factor Surveillance System. Individual level obesity measures were linked to the metropolitan area level food environment factors. Models were fitted using generalised estimating equations to control for metropolitan area level intra-correlation and individual level sociodemographic characteristics. It was found that adults residing in cities with a large share of supermarket and full-service restaurant workers were less likely to be obese, while adults residing in cities with a large share of convenience store and fast food restaurant workers were more likely to be obese. Supermarkets and full-service restaurant workers are concentrated in the Northeast and West of the US, where obesity prevalence is relatively lower, while convenience stores and fast-food restaurant workers are concentrated in the South and Midwest, where obesity prevalence is relatively higher. The food environment landscapes measured at the metropolitan area level explain the continental-scale patterns of obesity prevalence. The types of food that are readily available and widely served may translate into obesity disparities across metropolitan areas.

Labor Force Activity of Women in Metropolitan and Nonmetropolitan America. Rural Development Research Report No. 15.

Science.gov (United States)

Brown, David L.; O'Leary, Jeanne M.

Between 1960 and 1970 economic opportunity and progress for women in American non-metropolitan areas was mixed. While women in metropolitan areas were more likely to be labor force members than were non-metropolitan women, the difference in metropolitan and non-metropolitan labor force participation rates narrowed during the period. For women…

Metropolitan vision making - using backcasting as a strategic learning process to shape metropolitan futures

NARCIS (Netherlands)

Neuvonen, A.; Ache, P.M.

2014-01-01

Abstract: The need for new forward looking tools in urban planning is immense: The new functional relations and structures are stretching beyond our capacity to 'rationally' capture modern metropolitan spaces Neuman & Hull 2009). At the same time cities struggle to find tools to help manage a

Exarh of the Bulgarian Church metropolitan Stephen and the Moscow Patriarchy

Directory of Open Access Journals (Sweden)

Kostriukov Andrei

2013-02-01

Full Text Available The article covers the last period of church-administrative activity of the Sofia’s metropolitan Stephаn (Shokov. The author describes the testimonies of contemporaries about the character and personal qualities of this ambiguous hierarch. In 1945–1948 metropolitan Stephan was the exarch of the Bulgarian Orthodox Church and participated in the Meeting of heads and representatives of Autocephalous Orthodox Churches in 1948. The author considers the circumstances of the dismissal of metropolitan Stephаn and his exile as especially important and interesting ones. The meeting of 1948 became the critical event in the exarch’s destiny. Being the supporter of ecumenism, metropolitan Stephen tried unsuccessfully to convince Patriarch Alexis of his rightness in order not to allow the condemnation of ecumenical contacts by the Moscow meeting. However Moscow looked on ecumenism differently in those days. In Moscow the Soviet management aspired to establishment of the centre of World Orthodoxy and tried to cite the Moscow Patriarchy against Constantinople that was under the influence of the USA and the Great Britain. As the Constantinople Patriarchy approved the ecumenical movement, the Moscow Patriarchy has been forced to take of an opposite position. Therefore, the participation of the Russian Church and Churches of the socialist countries in the ecumenical movement was impossible. Metropolitan Stephan, supporting the superiority of the Moscow Patriarchy in the World Orthodoxy, supported the active participation of all Local Churches in the ecumenical movement. The communistic management applied the maximum force to the exarch in order he has not made undesirable statements at the meeting. The fate of metropolitan Stephan has been decided after this meeting. In 1948 he was fired and exiled. The Moscow Patriarchy did not exclude the possibility of moving of metropolitan Stephаn to Russia and his location in any monastery. However metropolitan

Water crisis: the metropolitan Atlanta, Georgia, regional water supply conflict

KAUST Repository

Missimer, Thomas M.; Danser, Philip Alexander; Amy, Gary L.; Pankratz, Tom M.

2014-01-01

decades. Drought and environmental management of the reservoir combined to create a water shortage which nearly caused a disaster to the region in 2007 (only about 35 days of water supply was in reserve). While the region has made progress in controlling

78 FR 53270 - Revision of Air Quality Implementation Plan; California; Sacramento Metropolitan Air Quality...

Science.gov (United States)

2013-08-29

... Quality Implementation Plan; California; Sacramento Metropolitan Air Quality Management District... to the Sacramento Metropolitan Air Quality Management District (SMAQMD or District) portion of the..., Sacramento Metropolitan Air Quality Management District, Rule 214 (Federal New Source Review), Rule 203...

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

International Nuclear Information System (INIS)

Chakraborty, Apurba; Biswas, Dhrubes

2015-01-01

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

Small-town migration to metropolitan centres: a case in Peninsular Malaysia.

Science.gov (United States)

Lee Boon Thong

1979-12-01

In Malaysia small towns are an important source of population gowth in metropolitan areas. To provide empirical evidence of the magnitude and roles of small urban centers as complementary sources of population growth in metropolitan areas, a small survey was conducted in 10 small towns in the State of Selangor. Criteria for the selection of these towns include a fair geographical spread over the State, and each area must characteristically possess a dominant urban center. The questionnaires were directed to the heads of 300 households with the intention of investigating the socioeconomic background of the households and the magnitude and characteristics of those members of the households who have migrated elsewhere. The total number of outmigrants from each area varied from 27-57, giving an overall average figure of 1.53 outmigrants/household. About 77% of the outmigrants had moved to the metropolitan centers. As the majority of the metropolitan migrants were more attracted to Kuala Lumpur, Klang, and Petaling Jaya, it may be assumed that the total outmigrants from small towns as derived would have consitituted about 39% of the population in the Klang Valley region. Based on this estimate, the role of small towns in metropolitan population growth is important. In the survey conducted, 2 broad categories of movements were involved: "economic movers," i.e., those who migrated to work or to establish businesses in the metropolitan areas; and "noneconomic movers," i.e., those who moved to continue their studies or to follow their spouses, and so forth. The economic mover stream made up 71% of the total metropolitan migrants. 2 variables--marital status and sex--were significantly related to the economic or noneconomic nature of the metropolitan migrants. The movement of males tended to be associated with economic motives whereas noneconomic reasons for movement tended to be the case among females migrants. The most important occupational group of the economically

Consumer Willingness to Pay a Premium for Halal Goat Meat: A Case from Atlanta, Georgia

OpenAIRE

Ibrahim, Mohammed

2011-01-01

The growth in goat meat demand is attributed to the influx of immigrants from goat-meat-eating countries into the U.S. This Paper examines the willingness to pay a premium for halal goat meat. The factors that significantly impact the willingness to pay a premium for halal goat meat in Atlanta include income, current consumption, household size, and marital status. Results suggest that the mean willingness to pay a premium for the halal attribute is 50 cents per pound of goat meat.

Urban partnership agreement and congestion reduction demonstration programs : lessons learned on congestion pricing from the Seattle and Atlanta household travel behavior surveys.

Science.gov (United States)

2014-04-01

This paper presents lessons learned from household traveler surveys administered in Seattle and Atlanta as part of the evaluation of the Urban Partnership Agreement and Congestion Reduction Demonstration Programs. The surveys use a two-stage panel su...

Air pollution holiday effect in metropolitan Kaohsiung

Science.gov (United States)

Tan, P.; Chen, P. Y.

2014-12-01

Different from Taipei, the metropolitan Kaohsiung which is a coastal and industrial city has the major pollution sources from stationary sources such as coal-fired power plants, petrochemical facilities and steel plants, rather than mobile sources. This study was an attempt to conduct a comprehensive and systematical examination of the holiday effect, defined as the difference in air pollutant concentrations between holiday and non-holiday periods, over the Kaohsiung metropolitan area. We documented evidence of a "holiday effect", where concentrations of NOx, CO, NMHC, SO2 and PM10 were significantly different between holidays and non-holidays, in the Kaohsiung metropolitan area from daily surface measurements of seven air quality monitoring stations of the Taiwan Environmental Protection Administration during the Chinese New Year (CNY) and non-Chinese New Year (NCNY) periods of 1994-2010. Concentrations of the five pollutants were lower in the CNY than in the NCNY period, however, that of O3 was higher in the CNY than in the NCNY period and had no holiday effect. The exclusion of the bad air quality day (PSI > 100) and the Lantern Festival Day showed no significant effects on the holiday effects of air pollutants. Ship transportation data of Kaohsiung Harbor Bureau showed a statistically significant difference in the CNY and NCNY period. This difference was consistent with those found in air pollutant concentrations of some industrial and general stations in coastal areas, implying the possible impact of traffic activity on the air quality of coastal areas. Holiday effects of air pollutants over the Taipei metropolitan area by Tan et al. (2009) are also compared.

Printing activity of the Metropolitan Gavriil Banulescu Bodoni

Directory of Open Access Journals (Sweden)

Nicolae Fustei

2013-07-01

Full Text Available The present study is dedicated to the printing activity of the Metropolitan Gavriil Bănulescu-Bodoni’s activity. The religious and secular prints made from Chisinau’s Diocesan typography by Metropolitan Gavriil promote the idea of national unity of people from Moldavia, Wallachia and Transylvania. Due to the new documents from archives, more evidences and „more light” are being spread over the activity of famous hierarch, whose life is linked with the history of culture of three nations – Romanians, Ukrainians and Russians.

Polycentric Structures in Latin American Metropolitan Areas : Identifying Employment Sub-centres

NARCIS (Netherlands)

Fernández-Maldonado, Ana María; Romein, Arie; Verkoren, Otto|info:eu-repo/dai/nl/073181773; Parente Paula Pessoa, Renata

2014-01-01

Fernández-Maldonado A. M., Romein A., Verkoren O. and Parente Paula Pessoa R. Polycentric structures in Latin American metropolitan areas: identifying employment sub-centres, Regional Studies. The significant spatial transformations that have occurred within Latin American metropolitan areas since

Assessment of flood risk in Tokyo metropolitan area

Science.gov (United States)

Hirano, J.; Dairaku, K.

2013-12-01

Flood is one of the most significant natural hazards in Japan. The Tokyo metropolitan area has been affected by several large flood disasters. Therefore, investigating potential flood risk in Tokyo metropolitan area is important for development of adaptation strategy for future climate change. We aim to develop a method for evaluating flood risk in Tokyo Metropolitan area by considering effect of historical land use and land cover change, socio-economic change, and climatic change. Ministry of land, infrastructure, transport and tourism in Japan published 'Statistics of flood', which contains data for flood causes, number of damaged houses, area of wetted surface, and total amount of damage for each flood at small municipal level. By using these flood data, we estimated damage by inundation inside a levee for each prefecture based on a statistical method. On the basis of estimated damage, we developed flood risk curves in the Tokyo metropolitan area, representing relationship between damage and exceedance probability of flood for the period 1976-2008 for each prefecture. Based on the flood risk curve, we attempted evaluate potential flood risk in the Tokyo metropolitan area and clarify the cause for regional difference of flood risk. By analyzing flood risk curves, we found out regional differences of flood risk. We identified high flood risk in Tokyo and Saitama prefecture. On the other hand, flood risk was relatively low in Ibaraki and Chiba prefecture. We found that these regional differences of flood risk can be attributed to spatial distribution of entire property value and ratio of damaged housing units in each prefecture.We also attempted to evaluate influence of climate change on potential flood risk by considering variation of precipitation amount and precipitation intensity in the Tokyo metropolitan area. Results shows that we can evaluate potential impact of precipitation change on flood risk with high accuracy by using our methodology. Acknowledgments

Metropolization Process for enhancing local and regional planning : an experience of cirebon metropolitan, West Java

Science.gov (United States)

Supriyadi Rustidja, E.

2018-03-01

Metropolitan develops in line with resource utilization, investment, and transactions of regional activities. Metropolization of an area gives emerge urban economy that changes the situation, form, and pattern of urban space interactions. On the other hand, metropolism concerns the strategy of changing variation of urban space, so that metropolitan invasion not only form of urban space but also the process of interaction among stakeholders in developing metropolitan area. Based on participatory research, this article explores metropolitan invasion process for enhancing local and regional planning, both indigenous and intrusive cataclysmic. The study find that the primeval, rural, and urban as elemental environment must be considered in developing metropolitan, not merely form the structure and pattern of urban space. The metropolization process also requires the strategic of rural urban linkage, context setting and local assessment, strategic community investment, and interculturalist approach. The other findings of the study show that metropolization in Cirebon Metropolitan, West Java emphasizing on promotion of competitiveness strategy, value chain urban activities, and networking of urban areas. Cirebon Metropolitan must promote the realization of growth centers and connect the interregional activities of metropolitan area for providing sustainable economic growth.

40 CFR 81.43 - Metropolitan Toledo Interstate Air Quality Control Region.

Science.gov (United States)

2010-07-01

... Quality Control Region. 81.43 Section 81.43 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.43 Metropolitan Toledo Interstate Air Quality Control Region. The Metropolitan Toledo Interstate Air Quality Control Region (Ohio-Michigan) consists of the territorial area...

40 CFR 81.31 - Metropolitan Providence Interstate Air Quality Control Region.

Science.gov (United States)

2010-07-01

... Quality Control Region. 81.31 Section 81.31 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.31 Metropolitan Providence Interstate Air Quality Control Region. The Metropolitan Providence Interstate Air Quality Control Region (Rhode Island-Massachusetts) consists of the...

40 CFR 81.78 - Metropolitan Portland Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.78 Section 81.78 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.78 Metropolitan Portland Intrastate Air Quality Control Region. The Metropolitan Portland Intrastate Air Quality Control Region (Maine) consists of the territorial area...

40 CFR 81.16 - Metropolitan Denver Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.16 Section 81.16 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.16 Metropolitan Denver Intrastate Air Quality Control Region. The Metropolitan Denver Intrastate Air Quality Control Region (Colorado) consists of the territorial area...

40 CFR 81.29 - Metropolitan Indianapolis Intrastate Air Quality Control Region.

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2010-07-01

... Air Quality Control Region. 81.29 Section 81.29 Protection of Environment ENVIRONMENTAL PROTECTION... Designation of Air Quality Control Regions § 81.29 Metropolitan Indianapolis Intrastate Air Quality Control Region. The Metropolitan Indianapolis Intrastate Air Quality Control Region consists of the territorial...

40 CFR 81.101 - Metropolitan Dubuque Interstate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.101 Section 81.101 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.101 Metropolitan Dubuque Interstate Air Quality Control Region. The Metropolitan Dubuque Interstate Air Quality Control Region (Illinois-Iowa-Wisconsin) consists of the...

40 CFR 81.44 - Metropolitan Memphis Interstate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.44 Section 81.44 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.44 Metropolitan Memphis Interstate Air Quality Control Region. The Metropolitan Memphis Interstate Air Quality Control Region (Arkansas-Mississippi-Tennessee) consists of the...

40 CFR 81.19 - Metropolitan Boston Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.19 Section 81.19 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.19 Metropolitan Boston Intrastate Air Quality Control Region. The Metropolitan Boston Intrastate Air Quality Control Region (Massachusetts) consists of the territorial area...

40 CFR 81.28 - Metropolitan Baltimore Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.28 Section 81.28 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.28 Metropolitan Baltimore Intrastate Air Quality Control Region. The Metropolitan Baltimore Intrastate Air Quality Control Region (Maryland) consists of the territorial area...

40 CFR 81.89 - Metropolitan Cheyenne Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.89 Section 81.89 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.89 Metropolitan Cheyenne Intrastate Air Quality Control Region. The Metropolitan Cheyenne Intrastate Air Quality Control Region (Wyoming) consists of the territorial area...

40 CFR 81.87 - Metropolitan Boise Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.87 Section 81.87 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.87 Metropolitan Boise Intrastate Air Quality Control Region. The Metropolitan Boise Intrastate Air Quality Control Region (Idaho) consists of the territorial area encompassed...

40 CFR 81.75 - Metropolitan Charlotte Interstate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.75 Section 81.75 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.75 Metropolitan Charlotte Interstate Air Quality Control Region. The Metropolitan Charlotte Interstate Air Quality Control Region (North Carolina-South Carolina) has been revised...

40 CFR 81.20 - Metropolitan Cincinnati Interstate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.20 Section 81.20 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.20 Metropolitan Cincinnati Interstate Air Quality Control Region. The Metropolitan Cincinnati Interstate Air Quality Control Region (Ohio-Kentucky-Indiana) is revised to consist of...

40 CFR 81.34 - Metropolitan Dayton Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.34 Section 81.34 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.34 Metropolitan Dayton Intrastate Air Quality Control Region. The Metropolitan Dayton Intrastate Air Quality Control Region consists of the territorial area encompassed by the...

40 CFR 81.41 - Metropolitan Birmingham Intrastate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.41 Section 81.41 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.41 Metropolitan Birmingham Intrastate Air Quality Control Region. The Metropolitan Birmingham Intrastate Air Quality Control Region (Alabama) has been revised to consist of the...

40 CFR 81.14 - Metropolitan Chicago Interstate Air Quality Control Region.

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2010-07-01

... Quality Control Region. 81.14 Section 81.14 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Air Quality Control Regions § 81.14 Metropolitan Chicago Interstate Air Quality Control Region. The Metropolitan Chicago Interstate Air Quality Control Region (Illinois-Indiana) is revised to consist of the...

Use and occurrence of pesticides in the Apalachicola-Chattahoochee-Flint River basin, Georgia, Alabama, and Florida, 1960-91

Science.gov (United States)

Stell, Susan M.; Hopkins, Evelyn H.; Buell, Gary R.; Hippe, Daniel J.

1995-01-01

or above a minimum reporting level in about five percent of all analyses. Most of the pesticide analyses and most of the analyses having concentrations above minimum reporting levels in these databases are for organochlorine insecticides in samples collected five or more years before this study. With few exceptions, most of organochlorine insecticides are now banned from use in the United States. Concentrations of currently (1991) used pesticides were at or above a minimum reporting level in about 0.3 percent of the analyses. The geographic patterns in the occurrence and distribution of pesticides in the ACF River basin (as defined by data collected during 1960-91) are, as expected, somewhat defined by land-use patterns. DDT (together with DDD and DDE) were detected in wide distribution in the sediments and aquatic biota of primarily mainstem and reservoir sites in the Chattahoochee, Flint, and Apalachicola drainages. DDT was used through 1973 as an insecticide on cotton, fruits, and vegetables; and for mosquito control, so its widespread occurrence in both urban and agricultural settings is consistent with its use. Chlordane, heptachlor, dieldrin, and related compounds were agriculturally used through 1974, but predominantly as termiticides through the late 1980?s. Compounds in these groups have been found in the sediments and aquatic biota of tributary streams draining the Atlanta Metropolitan area and of mainstem reaches and reservoirs of the Chattahoochee River downstream from the Atlanta and Columbus, Ga., Metropolitan areas. The phenoxy-acid herbicides are widely used in residential, commercial/industrial, agricultural, and silvicultural areas of the ACF River basin. Detectable concentrations of 2,4-D were found in most of the surface-waters sampled in the Atlanta Metropolitan area. It is unfortunate that only limited inference can be drawn on temporal patterns. Many of the Federal and State agency pesticide-monitoring programs have been targeted

Green roof adoption in atlanta, georgia: the effects of building characteristics and subsidies on net private, public, and social benefits.

Science.gov (United States)

Mullen, Jeffrey D; Lamsal, Madhur; Colson, Greg

2013-10-01

This research draws on and expands previous studies that have quantified the costs and benefits associated with conventional roofs versus green roofs. Using parameters from those studies to define alternative scenarios, we estimate from a private, public, and social perspective the costs and benefits of installing and maintaining an extensive green roof in Atlanta, GA. Results indicate net private benefits are a decreasing function of roof size and vary considerably across scenarios. In contrast, net public benefits are highly stable across scenarios, ranging from $32.49 to $32.90 m(-2). In addition, we evaluate two alternative subsidy regimes: (i) a general subsidy provided to every building that adopts a green roof and (ii) a targeted subsidy provided only to buildings for which net private benefits are negative but net public benefits are positive. In 6 of the 12 general subsidy scenarios the optimal public policy is not to offer a subsidy; in 5 scenarios the optimal subsidy rate is between $20 and $27 m(-2); and in 1 scenario the optimal rate is $5 m(-2). The optimal rate with a targeted subsidy is between $20 and $27 m(-2) in 11 scenarios and no subsidy is optimal in the twelfth. In most scenarios, a significant portion of net public benefits are generated by buildings for which net private benefits are positive. This suggests a policy focused on information dissemination and technical assistance may be more cost-effective than direct subsidy payments.

Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

International Nuclear Information System (INIS)

Gong, Z.; Niu, Z.C.; Huang, S.S.; Fang, Z.D.; Sun, B.Q.; Xia, J.B.

2005-01-01

GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings

Using synoptic weather types to predict visitor attendance at Atlanta and Indianapolis zoological parks

Science.gov (United States)

Perkins, David R.

2018-01-01

Defining an ideal "tourism climate" has been an often-visited research topic where explanations have evolved from global- to location-specific indices tailored to tourists' recreational behavior. Unfortunately, as indices become increasingly specific, they are less translatable across geographies because they may only apply to specific activities, locales, climates, or populations. A key need in the future development of weather and climate indices for tourism has been a translatable, meteorologically based index capturing the generalized ambient atmospheric conditions yet considering local climatology. To address this need, this paper tests the applicability of the spatial synoptic classification (SSC) as a tool to predict visitor attendance response in the tourism, recreation, and leisure (TRL) sector across different climate regimes. Daily attendance data is paired with the prevailing synoptic weather condition at Atlanta and Indianapolis zoological parks from September 2001 to June 2011, to review potential impacts ambient atmospheric conditions may have on visitor attendances. Results indicate that "dry moderate" conditions are most associated with high levels of attendance and "moist polar" synoptic conditions are most associated with low levels of attendance at both zoological parks. Comparing visitor response at these zoo locations, visitors in Indianapolis showed lower levels of tolerance to synoptic conditions which were not "ideal." Visitors in Indianapolis also displayed more aversion to "polar" synoptic regimes while visitors in Atlanta displayed more tolerance to "moist tropical" synoptic regimes. Using a comprehensive atmospheric measure such as the SSC may be a key to broadening application when assessing tourism climates across diverse geographies.

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

International Nuclear Information System (INIS)

Shen, J; Cha, J J; Song, Y; Lee, M L

2014-01-01

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems. (paper)

Spatial clustering of knowledge-based industries in the Helsinki Metropolitan Area

Directory of Open Access Journals (Sweden)

Juan Eduardo Chica

2016-01-01

Full Text Available The central locations of metropolitan areas have some specific attributes, leading to an accumulation of large knowledge exchanges and extensive knowledge externalities, which encourage the concentration of various economic activities, especially knowledge-based industries (KBI. Other agglomeration economies found in metropolitan areas – such as telecommunications and transport infrastructures connected to global productive circuits and complementary labour markets – are key factors for KBI employment growth. This paper explores the Helsinki Metropolitan Area’s (HMA spatial clustering of KBI at the sub-district level, and the role played by agglomeration economies (both specialization and diversity economies in fostering this process. The results reveal that KBI employment shows patterns of concentration in the core and adjacent areas. The specialization and diversity economies found in the metropolitan core and the specialization economies found in others areas lead to KBI spatial clustering in the HMA. Public policies regarding the promotion of science parks have also played a decisive role.

URBANIZATION AND SPATIAL CHANGES IN DEMOGRAPHIC CHARACTERISTICS IN MONTERREY METROPOLITAN REGION

Directory of Open Access Journals (Sweden)

Arun Kumar Acharya

2011-10-01

Full Text Available This paper tries to explore the process of urbanization and spatial changes in demographic features in the Monterrey Metropolitan Region (MMR, Mexico. This city is the third largest urban sector in Mexico which has around 4 million population. It is also the industrial and economic capital of the country. The present study found that rapid urbanization in the metropolitan region has a close association with process of industrialization. In population distribution and composition, study found that the metropolitan region had its “demographic transition” during the years seventies and currently the region is taking advantages of demographic bonus cohort, i.e. a higher concentration of population in economic active groups compare to children and old age population. However, this paper indentified a higher imbalance in metropolitan demographic scenario. On the one hand, there is di-populization in the city center region and in other there is a steady increment of population in peri-urban region.

Relation of urbanization to stream habitat and geomorphic characteristics in nine metropolitan areas of the United States

Science.gov (United States)

Fitzpatrick, Faith A.; Peppler, Marie C.

2010-01-01

The relation of urbanization to stream habitat and geomorphic characteristics was examined collectively and individually for nine metropolitan areas of the United States?Portland, Oregon; Salt Lake City, Utah; Denver, Colorado; Dallas?Forth Worth, Texas; Milwaukee?Green Bay, Wisconsin; Birmingham, Alabama; Atlanta, Georgia; Raleigh, North Carolina; and Boston, Massachusetts. The study was part of a larger study conducted by the U.S. Geological Survey from 1999 to 2004 to examine the effects of urbanization on the physical, chemical, and biological components of stream ecosystems. The objectives of the current study were to determine how stream habitat and geomorphic characteristics relate to different aspects of urbanization across a variety of diverse environmental settings and spatial scales. A space-for-time rural-to-urban land-cover gradient approach was used. Reach-scale habitat data and geomorphic characteristic data were collected once during low flow and included indicators of potential habitat degradation such as measures of channel geometry and hydraulics, streambed substrate, low-flow reach volume (an estimate of base-flow conditions), habitat complexity, and riparian/bank conditions. Hydrologic metrics included in the analyses were those expected to be altered by increases in impervious surfaces, such as high-flow frequency and duration, flashiness, and low-flow duration. Other natural and human features, such as reach-scale channel engineering, geologic setting, and slope, were quantified to identify their possible confounding influences on habitat relations with watershed-scale urbanization indicators. Habitat and geomorphic characteristics were compared to several watershed-scale indicators of urbanization, natural landscape characteristics, and hydrologic metrics by use of correlation analyses and stepwise linear regression. Habitat and geomorphic characteristics were related to percentages of impervious surfaces only in some metropolitan areas and

Flood-inundation maps for Peachtree Creek from the Norfolk Southern Railway bridge to the Moores Mill Road NW bridge, Atlanta, Georgia

Science.gov (United States)

Musser, Jonathan W.

2012-01-01

Digital flood-inundation maps for a 5.5-mile reach of the Peachtree Creek from the Norfolk Southern Railway bridge to the Moores Mill Road NW bridge, were developed by the U.S. Geological Survey (USGS) in cooperation with the City of Atlanta, Georgia. The inundation maps, which can be accessed through the USGS Flood Inundation Mapping Science Web site at http://water.usgs.gov/osw/flood_inundation/, depict estimates of the areal extent and depth of flooding corresponding to selected water levels (stages) at the USGS streamgage at Peachtree Creek at Atlanta, Georgia (02336300) and the USGS streamgage at Chattahoochee River at Georgia 280, near Atlanta, Georgia (02336490). Current water level (stage) at these USGS streamgages may be obtained at http://waterdata.usgs.gov/ and can be used in conjunction with these maps to estimate near real-time areas of inundation. The National Weather Service (NWS) is incorporating results from this study into the Advanced Hydrologic Prediction Service (AHPS) flood warning system (http:/water.weather.gov/ahps/). The NWS forecasts flood hydrographs at many places that commonly are collocated at USGS streamgages. The forecasted peak-stage information for the USGS streamgage at Peachtree Creek, which is available through the AHPS Web site, may be used in conjunction with the maps developed in this study to show predicted areas of flood inundation. A one-dimensional step-backwater model was developed using the U.S. Army Corps of Engineers HEC–RAS software for a 6.5-mile reach of Peachtree Creek and was used to compute flood profiles for a 5.5-mile reach of the creek. The model was calibrated using the most current stage-discharge relations at the Peachtree Creek at Atlanta, Georgia, streamgage (02336300), and the Chattahoochee River at Georgia 280, near Atlanta, Georgia, streamgage (02336490) as well as high water marks collected during the 2010 annual peak flow event. The hydraulic model was then used to determine 50 water

Implications of urban structure on carbon consumption in metropolitan areas

International Nuclear Information System (INIS)

Heinonen, Jukka; Junnila, Seppo

2011-01-01

Urban structure influences directly or indirectly the majority of all green house gas (GHG) emissions in cities. The prevailing belief is that dense metropolitan areas produce less carbon emissions on a per capita basis than less dense surrounding rural areas. Consequently, density targets have a major role in low-carbon urban developments. However, based on the results of this study, the connection seems unclear or even nonexistent when comprehensive evaluation is made. In this letter, we propose a hybrid life cycle assessment (LCA) method for calculating the consumption-based carbon footprints in metropolitan areas, i.e. carbon consumption, with the emphasis on urban structures. The method is input-output-based hybrid LCA, which operates with the existing data from the region. The study is conducted by performing an analysis of the carbon consumption in two metropolitan areas in Finland, including 11 cities. Both areas consist of a dense city core and a less dense surrounding suburban area. The paper will illustrate that the influence of urban density on carbon emissions is insignificant in the selected metropolitan areas. In addition, the utilized consumption-based method links the climate effects of city-level development to the global production of emissions.

Functional vegetable guar (Cyamopsis tetragonoloba L. Taub.) accessions for improving flavonoid concentrations in immature pods

Science.gov (United States)

Dry guar (Cyamopsis tetragonoloba L. Taub) seed are primarily used to extract galactomannan gum for oil fracking, however the immature pods are used as a vegetable in India and sold in ethnic grocery stores in the Atlanta, GA area. Twenty-two guar genotypes were grown in the field at Griffin, GA, US...

Cummings/Ju - Harvard; Emory | Division of Cancer Prevention

Science.gov (United States)

Principal Investigator: Richard D Cummings, PhDInstitution: Beth Israel Deaconess Medical Center and Harvard Medical School, Boston, MA Principal Investigator: Tongzhong Ju, MD, PhDInstitution: Emory University, Atlanta, GA |

76 FR 23838 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Open Axis Group...

Science.gov (United States)

2011-04-28

...; Everbread Limited, London, UNITED KINGDOM; AgentWare Inc., Atlanta, GA; Klee Data Systems SA, Le Plessis-Robinson, FRANCE; Alaska Airlines, Seattle, WA; Association of Retail Travel Agents-Canada, Toronto...

76 FR 51120 - Notice of Opportunity for Public Comment on Release of Federally Obligated Property at Hartsfield...

Science.gov (United States)

2011-08-17

... Airports District Office, Attn: Aimee A. McCormick, Program Manager, 1701 Columbia Ave., Campus Building..., GA 30320-2509. FOR FURTHER INFORMATION CONTACT: Aimee McCormick, Program Manager, Atlanta Airports...

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Towards a Metropolitan Fundamental Diagram Using Travel Survey Data

Science.gov (United States)

2016-01-01

Using travel diary data from 2000–2001 and 2010–2012 this research examines fundamental traffic relationships at the metropolitan level. The results of this paper can help to explain the causes of some traffic phenomena. Network average speed by time of day can be explained by trip length and cumulative number of vehicles on the road. A clockwise hysteresis loop is found in the Metropolitan Fundamental Diagram in the morning period and a reverse process happens in the afternoon. PMID:26866913

Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

Energy Technology Data Exchange (ETDEWEB)

Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

2010-12-15

Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Science.gov (United States)

Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

2017-07-25

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

Metropolitan Quantum Key Distribution with Silicon Photonics

Science.gov (United States)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; Cai, Hong; Long, Christopher M.; Boynton, Nicholas; Martinez, Nicholas; DeRose, Christopher; Chen, Changchen; Grein, Matthew; Trotter, Douglas; Starbuck, Andrew; Pomerene, Andrew; Hamilton, Scott; Wong, Franco N. C.; Camacho, Ryan; Davids, Paul; Urayama, Junji; Englund, Dirk

2018-04-01

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

Metropolitan siting: a historical perspective

International Nuclear Information System (INIS)

Bunch, D.F.

1978-09-01

The paper discusses the development and implementation of the Reactor Site Criteria and particularly the evolving posture of the agency on the subject of metropolitan siting. The review actions on nine sites are described to illustrate the various issues and positions and to clarify at least some of the bases for current practices of the NRC staff

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

Science.gov (United States)

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Health Hazard Evaluations

Science.gov (United States)

... May 1, 2018 Content source: National Institute for Occupational Safety and Health Division of Surveillance, Hazard Evaluation, and Field Studies ... Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 ...

Occupational Cancer

Science.gov (United States)

... November 3, 2015 Content source: National Institute for Occupational Safety and Health Division of Surveillance, Hazard Evaluations, and Field Studies ... Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 ...

40 CFR 59.409 - Addresses of EPA Offices.

Science.gov (United States)

2010-07-01

..., Tennessee), Director, Air, Pesticides, and Toxics Management Division, 61 Forsyth Street, Atlanta, GA 30303... Division, 77 West Jackson Boulevard, Chicago, IL 60604-3507. EPA Region VI (Arkansas, Louisiana, New Mexico...

Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

International Nuclear Information System (INIS)

Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

2006-01-01

We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

Non-metropolitan residential gated developments in the Western Cape Province, South Africa

CSIR Research Space (South Africa)

Spocter, M

2011-07-01

Full Text Available -metropolitan locale and the topic is also unexplored in the South African context. This research attempts to address this research gap by investigating the locations of gated developments in non-metropolitan towns of varying sizes in the Western Cape...

Political apathy amongst students: A case study of Nelson Mandela Metropolitan University

Directory of Open Access Journals (Sweden)

Ntsikelelo B. Breakfast

2017-09-01

Full Text Available The primary motivation for this research, in which a qualitative method was employed, was to examine political apathy amongst students at Nelson Mandela Metropolitan University. The secondary motivation was to question whether youth political apathy threatens the consolidation of democracy. The researchers arranged four focus groups at Nelson Mandela Metropolitan University. A purposive sampling technique was utilised. All 50 participants in the study were Nelson Mandela Metropolitan University undergraduate and postgraduate black students, with ages ranging from 21 to 35 years. The researchers encouraged participants to have maximum participation in the focus group deliberations. The researchers also made use of elite interviews in the study. The findings of this study suggest that political apathy does exist amongst students at Nelson Mandela Metropolitan University. Most of the participants in the focus groups indicated that young people in post-apartheid South Africa have no interest in politics.

Comparison of daytime and night-time populations adjacent to interstate highways in metropolitan areas

International Nuclear Information System (INIS)

Mills, G.S.; Neuhauser, K.S.

1999-01-01

Daytime and night-time population densities bordering Interstate highway routes in metropolitan areas are compared at the traffic analysis zone level. In three of the metropolitan areas studied, histograms of daytime to night-time population density ratios are peaked at 1.0. In a smaller metropolitan area, the peak of the histogram moves to values greater than 1.0 but less than 2.0. In view of the typical uncertainties in calculating radiological transport effects (∼2), this study indicates that a distinction between daytime and night-time transport is not warranted, especially since a typical route includes extensive transport outside metropolitan areas. (author)

Green Infrastructure Concept for JABODETABEKJUR Metropolitan Area

Science.gov (United States)

Tanuwidjaja, Gunawan; Gates Chang, Bill

2017-07-01

Sixty “Mega Cities” would emerge by 2015 catering of 600 million populations, and were threatened by the climate change, because of cyclones, flooding, etc. Jakarta became a metro region covering Jakarta, Bogor, Tangerang, Bekasi, Depok and Cianjur. Jakarta metropolitan faced the very high population growth, urban sprawling, traffic jams, flooding, green open space reduction, environmental degradation, urban slums and illegal street hawkers. Flooding and traffic congestions were the two most important issues to solve. SWOT analysis and urban design solutions were produced to create a sustainable solution. Related to transportation issues, Singapore Mass Rapid Transport (MRT) concept was evaluated. Meanwhile the Netherlands’ polder concept as well as Singapore’s Integrated Water Management were also analyzed. The development of above ground MRT as well as Busway could be developed to connect Jakarta Metropolitan Region. The networks were developed on the main toll road networks. The MRT and Busway would eventually replace the need of automobile use in the future. The Transit - Oriented - Development (TOD) with high density can be suggested to be concentrated nearby the MRT and Busway interchange stations. The Netherlands’ polder and were adopted for urban’ low-lying lands in Jakarta Metropolitan Region, A polder system was defined as the Integrated Man-made Drainage System consisting Dikes, Drains, Retention Ponds, Outfall Structures or Pumping Stations. The polder system was proposed to be extended to Tangerang and Bekasi area.

The metropolitan VoD system based on ethernet/SCM PON

Science.gov (United States)

Ji, Wei; Yang, Hongliang; Feng, Dejun; Liu, Yang; Sun, Jande

2008-11-01

VoD is a very attractive service which used for entertainment, education and other purposes. In this paper, we present an evolution method that integrates the EPON and SCM-PON by WDM technology to provide high dedicated bandwidth for the metropolitan VoD services. Using DVB, IPTV protocol, unicasting and broadcasting method to maximize the system throughput and by numerical analysis, the hybrid PON system can implement the metropolitan VoD services.

Polycentric Metropolitan Form: Application of a ‘Northern’ Concept in Latin America

Directory of Open Access Journals (Sweden)

Arie Romein

2014-07-01

Full Text Available Since the mid 20th century, large urban areas in advanced economies have experienced a fundamental transformation from relatively compact monocentric cities towards more extended polycentric metropolitan areas. By now, it is being commented repeatedly, but not investigated systematically that the concept of polycentricity is also adequate to characterise recent metropolitan dynamics in Latin-America.This paper aims to present a few key-issues for a future research agenda into polycentricity in Latin-American metropolitan areas. These elements are identified from a review of existing literature. Since no clear-cut definition and operationalisation of polycentricity exist yet, we distinguish some key-elements of this phenomenon in North America as a frame of reference for this review. It reveals that ‘polycentricity U.S. style’ is at best dawning in Latin-America. In order to achieve a more appropriate picture of polycentricity of Latin American metropolitan areas, our ideas for a research agenda take into account these areas typical economic, social and spatial conditions.

Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

International Nuclear Information System (INIS)

Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Koehler, K.; Johs, B.

2000-01-01

Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, Al x Ga 1-x N (x le 0.16), and In 0.13 Ga 0.87 N were deduced. Further, the dependence of the Al x Ga 1-x N band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the Al x Ga 1-x N gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

International Nuclear Information System (INIS)

Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

2000-01-01

We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

Atlanta 10 x 20 NTMS area: Alabama and Georgia. Data report

International Nuclear Information System (INIS)

Jones, P.L.

1979-08-01

Results of ground water and stream sediment reconnaissance in the National Topographic Map Series (NTMS) Atlanta 1 0 x 2 0 quadrangle are presented. Stream sediment samples were collected from small streams at 1312 sites or at a nominal density of one site per 13 square kilometers in rural areas. Ground water samples were collected at 951 sites or at a nominal density of one site per 18 square kilometers. Neutron activation analysis results are given for uranium and 16 other elements in sediments, and for uranium and 8 other elements in ground water and surface water. Field measurements and observations are reported for each site. Analytical data and field measurements are presented in tables and maps. Statistical summaries of data and a brief description of results are given. A generalized geologic map and a summary of the geology of the area are included

Metropolitan Quantum Key Distribution with Silicon Photonics

Directory of Open Access Journals (Sweden)

Darius Bunandar

2018-04-01

Full Text Available Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss. Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

76 FR 5379 - Disease, Disability, and Injury Prevention and Control Special Emphasis Panel (SEP): Pregnancy...

Science.gov (United States)

2011-01-31

... Terrace Hotel, 659 Peachtree Street, NE., Atlanta, GA 30308, Telephone: (404) 898-8305. Status: The..., pursuant to Public Law 92-463. Matters To Be Discussed: The meeting will include the initial review...

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-01-01

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-06-15

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Regional differences in commuting activities of inhabitants in the Tokyo metropolitan suburb

Directory of Open Access Journals (Sweden)

Masaki Kawase

2004-12-01

Full Text Available The purpose of this study is to elucidate gender differences and regional differences of co-mmuting activities by inhabitants in Japanese metropolitan suburbs. I found the different parts by districts in the metropolitan suburb. Regional factors cause gender differences in commuting activities and result in regional differences: In residential areas, inhabitants who work in metropolitan centers occupy much of the population. In older built-up areas, there are many “local” persons. In rural areas, motorization is progressing because access to rail-roads has been inconvenient. These regional factors influence the behavioral characteristics of commuting by married men, married women, never married men and never married women.

Women at High Risk for Diabetes

Science.gov (United States)

... Report Card 2012: National and State Profile of Diabetes and its Complications. Atlanta, GA: US Department of Health and Human Services; 2012. 8 American Diabetes Association. Standards of medical care in diabetes—2012. ...

75 FR 36432 - Termination of Declarations Justifying Emergency Use Authorizations of Certain In Vitro...

Science.gov (United States)

2010-06-25

.../TS, NA2) and Viral Culture Atlanta, GA 30333 Cepheid Cepheid Xpert Flu A Panel 904 Caribbean Drive... / Germany TessArae, LLC TessArray Resequencing Influenza A Microarray Detection Panel 46090 Lake Center...

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Two new Np--Ga phases: α-NpGa2 and metastable m-NpGa2

International Nuclear Information System (INIS)

Giessen, B.C.; Elliott, R.O.

1976-01-01

Following an earlier study of metastable Np-rich Np--Ga alloys, rapidly quenched Np--Ga alloys with 63 to 80 at. pct. Ga were prepared and studied. Two new NpGa 2 phases, both with an AlB 2 type structure, were found: α-NpGa 2 , with a = 4.246A, c = 4.060A, c/a = 0.956, and m-NpGa 2 , with a = 4.412A, c = 3.642A, c/a = 0.825. While m-NpGa 2 was observed only in very fast quenched (splat cooled) samples and appears to be metastable, α-NpGa 2 is probably an equilibrium phase. In a splat cooled alloy with 75 at. pct. Ga, another, unidentified, metastable phase was observed. Crystal chemical discussions of atomic volumes, interatomic distances and axial ratios are given; the volume difference between the two forms of NpGa 2 is correlated with a valence change of Np

Changing Housing Patterns in Metropolitan Washington

Science.gov (United States)

Grier, George; Grier, Eunice

1975-01-01

This testimony, before a public hearing of the New York City Commission on Human Rights in May 1974, summarizes extensive studies of changing minority residential patterns in metropolitan Washington and less extensive studies of other groups; the prospects for future desegregation and for using the growing economic potential of minority families…

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

Tokyo Metropolitan Earthquake Preparedness Project - A Progress Report

Science.gov (United States)

Hayashi, H.

2010-12-01

Munich Re once ranked that Tokyo metropolitan region, the capital of Japan, is the most vulnerable area for earthquake disasters, followed by San Francisco Bay Area, US and Osaka, Japan. Seismologists also predict that Tokyo metropolitan region may have at least one near-field earthquake with a probability of 70% for the next 30 years. Given this prediction, Japanese Government took it seriously to conduct damage estimations and revealed that, as the worst case scenario, if a7.3 magnitude earthquake under heavy winds as shown in the fig. 1, it would kill a total of 11,000 people and a total of direct and indirect losses would amount to 112,000,000,000,000 yen(1,300,000,000,000, 1=85yen) . In addition to mortality and financial losses, a total of 25 million people would be severely impacted by this earthquake in four prefectures. If this earthquake occurs, 300,000 elevators will be stopped suddenly, and 12,500 persons would be confined in them for a long time. Seven million people will come to use over 20,000 public shelters spread over the impacted area. Over one millions temporary housing units should be built to accommodate 4.6 million people who lost their dwellings. 2.5 million people will relocate to outside of the damaged area. In short, an unprecedented scale of earthquake disaster is expected and we must prepare for it. Even though disaster mitigation is undoubtedly the best solution, it is more realistic that the expected earthquake would hit before we complete this business. In other words, we must take into account another solution to make the people and the assets in this region more resilient for the Tokyo metropolitan earthquake. This is the question we have been tackling with for the last four years. To increase societal resilience for Tokyo metropolitan earthquake, we adopted a holistic approach to integrate both emergency response and long-term recovery. There are three goals for long-term recovery, which consists of Physical recovery, Economic

Earthquake Risk Mitigation in the Tokyo Metropolitan area

Science.gov (United States)

Hirata, N.; Sakai, S.; Kasahara, K.; Nakagawa, S.; Nanjo, K.; Panayotopoulos, Y.; Tsuruoka, H.

2010-12-01

Seismic disaster risk mitigation in urban areas constitutes a challenge through collaboration of scientific, engineering, and social-science fields. Examples of collaborative efforts include research on detailed plate structure with identification of all significant faults, developing dense seismic networks; strong ground motion prediction, which uses information on near-surface seismic site effects and fault models; earthquake resistant and proof structures; and cross-discipline infrastructure for effective risk mitigation just after catastrophic events. Risk mitigation strategy for the next greater earthquake caused by the Philippine Sea plate (PSP) subducting beneath the Tokyo metropolitan area is of major concern because it caused past mega-thrust earthquakes, such as the 1703 Genroku earthquake (magnitude M8.0) and the 1923 Kanto earthquake (M7.9) which had 105,000 fatalities. A M7 or greater (M7+) earthquake in this area at present has high potential to produce devastating loss of life and property with even greater global economic repercussions. The Central Disaster Management Council of Japan estimates that the M7+ earthquake will cause 11,000 fatalities and 112 trillion yen (about 1 trillion US$) economic loss. This earthquake is evaluated to occur with a probability of 70% in 30 years by the Earthquake Research Committee of Japan. In order to mitigate disaster for greater Tokyo, the Special Project for Earthquake Disaster Mitigation in the Tokyo Metropolitan Area (2007-2011) was launched in collaboration with scientists, engineers, and social-scientists in nationwide institutions. The results that are obtained in the respective fields will be integrated until project termination to improve information on the strategy assessment for seismic risk mitigation in the Tokyo metropolitan area. In this talk, we give an outline of our project as an example of collaborative research on earthquake risk mitigation. Discussion is extended to our effort in progress and

Spatio-temporal aspects of gated residential security estates in non-metropolitan Western Cape

CSIR Research Space (South Africa)

Spocter, M

2011-04-01

Full Text Available . This research attempts to address this research gap by focusing on the spatio-temporal aspects of non-metropolitan gated residential security estates in the Western Cape Province. It was found that most non-metropolitan gated residential security estates were...

Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure

International Nuclear Information System (INIS)

Chen, J.Y.; Chen, B.H.; Huang, Y.S.; Chin, Y.C.; Tsai, H.S.; Lin, H.H.; Tiong, K.K.

2013-01-01

Interfacial characteristics of GaAs/GaAs 0.64 P 0.19 Sb 0.17 GaAs heterostructures and emission properties of a quaternary GaAs 0.64 P 0.19 Sb 0.17 layer were studied by excitation-power- and temperature-dependent photoluminescence (PL) measurements. The GaAs-to-GaAsPSb upper interface related emission feature and signals from GaAsPSb and GaAs were observed and characterized. The upper interface related emission peak was attributed to the radiative recombination of spatially separated electron–hole pairs and suggesting the type-II alignment at the GaAs/GaAsPSb interface. The localized excitonic emission feature of GaAsPSb revealed a blueshift due to the saturation effect of localized states and showed a fast thermal-quench with the increase of temperature. The temperature variation of the band edge emission signal of GaAsPSb was found to follow that of GaAs closely. -- Highlights: ► PL characterization of GaAs/GaAsPSb/GaAs heterostructure. ► Type-II alignment at the GaAs/GaAsPSb interface. ► Near-band-edge emission lines of GaAsPSb

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Science.gov (United States)

Chang, Hung-Ming; Lai, Wei-Chih; Chen, Wei-Shou; Chang, Shoou-Jinn

2015-04-06

We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power. Similar to conventional UV LEDs with AlGaN/InGaN MQWs, UV LEDs with AlN/GaN/InGaN MQWs have forward voltages (V(f)'s) ranging from 3.21 V to 3.29 V at 350 mA. Each emission peak wavelength of AlN/GaN/InGaN MQW UV LEDs presents 350 mA output power greater than that of the corresponding emission peak wavelength of AlGaN/InGaN MQW UV LEDs. The light output power at 350mA of AlN/GaN/InGaN MQWs UV LEDs with 375 nm emission wavelength can reach around 26.7% light output power enhancement in magnitude compared to the AlGaN/InGaN MQWs UV LEDs with same emission wavelength. But 350mA light output power of AlN/GaN/InGaN MQWs UV LEDs with emission wavelength of 395nm could only have light output power enhancement of 2.43% in magnitude compared with the same emission wavelength AlGaN/InGaN MQWs UV LEDs. Moreover, AlN/GaN/InGaN MQWs present better InGaN thickness uniformity, well/barrier interface quality and less large size pits than AlGaN/InGaN MQWs, causing AlN/GaN/InGaN MQW UV LEDs to have less reverse leakage currents at -20 V. Furthermore, AlN/GaN/InGaN MQW UV LEDs have the 2-kV human body mode (HBM) electrostatic discharge (ESD) pass yield of 85%, which is 15% more than the 2-kV HBM ESD pass yield of AlGaN/InGaN MQW UV LEDs of 70%.

Head Lice: Malathion Frequently Asked Questions

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... be checked for signs of infestation. Does malathion kill head lice eggs? Yes. The malathion lotion (Ovide*) ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Test Your Knowledge about Kids' Health

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... Safety Tips Tips to Protect Yourself from Germ Monsters Make Summer Safe for Kids Websites for Kids ... CDC Jobs Funding LEGAL Policies Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329- ...

Facts about Ventricular Septal Defect

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... of the Aorta D-Transposition of the Great Arteries Hypoplastic Left Heart Syndrome Pulmonary Atresia Tetralogy of ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Facts about Encephalocele

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... of the Aorta D-Transposition of the Great Arteries Hypoplastic Left Heart Syndrome Pulmonary Atresia Tetralogy of ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Facts about Atrial Septal Defect

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... of the Aorta D-Transposition of the Great Arteries Hypoplastic Left Heart Syndrome Pulmonary Atresia Tetralogy of ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Facts about Upper and Lower Limb Reduction Defects

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Tetanus: Symptoms and Complications

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Assessing Your Weight

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... Type 2 Diabetes, high blood pressure, and coronary artery disease. Your waistline may be telling you that ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Facts about Microcephaly

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Opioid Use and Neural Tube Defects

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Heart Disease Risk Factors

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Facts about Hypospadias

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Facts about Anencephaly

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National Birth Defects Prevention Study (NBDPS)

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... of the Aorta D-Transposition of the Great Arteries Hypoplastic Left Heart Syndrome Pulmonary Atresia Tetralogy of ... Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO ( ...

Daily Mobility and Residential Migrations in the Montréal Metropolitan Region

Directory of Open Access Journals (Sweden)

Gilles Sénécal

2013-06-01

Full Text Available The purpose of this article is to simultaneously examine two types of mobility by developing a model of metropolitan organization that emphasizes the axis structure of mobility. The model is based on the realities of daily mobility and long-term residential mobility. Origin−Destination study results validated the axis representation of the metropolitan structure. Furthermore, building on data from a telephone survey, we considered the interactions between the two types of mobility along the Center-North axis of Montréal’s Census Metropolitan Area (CMA. The ensuing discussion on various models of metropolitan structure and their relevance today is framed in terms of the axes of mobility defined as territorial practices that are established within the patterns of daily life and are a significant factor in residential location decisions. The study raises broader issues concerning the relevance of drawing on standard models such as Burgess’s concentric zone model, Hoyt’s sector theory, Adam’s directional bias, or recent findings from the literature to understand urban form dynamics in the CMA.

Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

Science.gov (United States)

Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

2003-05-01

Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

Movement Technologies, Scale Structure and Metropolitan Life – an Empirical Research on the Effects of the Transportation System on the Metropolitan Process in Beijing

Directory of Open Access Journals (Sweden)

Qiang Sheng

2014-07-01

Full Text Available This paper is a morphological study on Beijing’s metropolitanisation process based on the development of its transportation networks. By extracting the ‘scale structure’ embedded in them, we construct a movement network model for Beijing and use it to analyse changing metropolitan centralities as shopping areas and market places in 1924, 1987 and 2006. Following Taylor’s proposal of Central Flow as a complementary model to Central Place, our study focuses on how the spatial distribution of metropolitan centralities has been affected by the rapid modernisation of transportation networks.

Helsinki Metropolitan Area Climate Change Adaptation Strategy

Energy Technology Data Exchange (ETDEWEB)

NONE

2012-07-01

The Helsinki Metropolitan Area Climate Change Adaptation Strategy has been prepared in close cooperation with the four cities of the metropolitan area (Helsinki, Espoo, Vantaa and Kauniainen), the Helsinki Region Environmental Services Authority HSY and other municipal, regional and state level organisations. In the strategy, strategic starting points and policies with which the metropolitan area prepares for the consequences of climate change, are compiled. The Helsinki Metropolitan Area adaptation strategy concentrates on the adaptation of the built and urban environment to the changing climate. The vision of the strategy is climate proof city - the future is built now. The strategy aims to (1) assess the impacts of climate change in the area, (2) prepare for the impacts of climate change and to extreme weather events and (3) to reduce the vulnerabilities of the area to climate variability and change. The target is to secure the well-being of the citizens and the functioning of the cities also in the changing climate conditions. The preparation of the adaptation strategy started in 2009 by producing the background studies. They include the regional climate and sea level scenarios, modelling of river floods in climate change conditions and a survey of climate change impacts in the region. Also, existing programmes, legislation, research and studies concerning adaptation were collected. The background studies are published in a report titled 'The Helsinki metropolitan area climate is changing - Adaptation strategy background studies' (in Finnish) (HSY 2010). HSY coordinated the strategy preparation. The work was carried out is close cooperation with the experts of the metropolitan area cities, regional emergency services, Ministry of the Environment, Helsinki Region Transport Authority and other regional organisations. The strategy work has had a steering group that consists of representatives of the cities and other central cooperation partners. The

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

International Nuclear Information System (INIS)

Ding Jieqin; Wang Xiaoliang; Xiao Hongling; Wang Cuimei; Yin Haibo; Chen Hong; Feng Chun; Jiang Lijuan

2012-01-01

Highlights: ► We present calculations of carrier confinement characteristics. ► An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier density in designed heterostructure is greatly increased. ► Interface roughness and alloy disorder scattering reduced. ► Carrier mobility will be improved in designed heterostructure. - Abstract: We present calculations of carrier confinement characteristics in (Al y Ga 1−y N/AlN)SLs/GaN/(In x Ga 1−x N/GaN)MQW/GaN heterojunction structure in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made firstly including thickness of GaN channel, InGaN, and indium composition of In x Ga 1−x N in order to increase carrier density and mobility, and the influence of pairs of AlGaN/AlN superlattices (SLs) and InGaN/GaN MQWs on structure was discussed. Theoretical calculations clearly indicate that the two-dimensional electron gas (2DEG) sheet carrier density in designed heterostructure is greatly increased due to the enhancing of carrier confinement compared to those in conventional AlGaN/GaN one at the similar Al composition. Furthermore, the calculated carrier distribution shows that carrier mobility will be improved by reducing interface roughness and alloy disorder scattering in designed heterostructure.

AlGaN/GaN double-channel HEMT

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

2010-01-01

The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

Dengue

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... emerged as a worldwide problem only since the 1950s. Although dengue rarely occurs in the continental United ... OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO (800-232-4636) , TTY: 888- ...

75 FR 22816 - Disease, Disability, and Injury Prevention and Control Special Emphasis Panel: Revitalizing Core...

Science.gov (United States)

2010-04-30

... (Closed). Place: JW Marriott Hotel Buckhead, 3300 Lenox Road, Atlanta, GA 30326, Telephone (404) 262-3344... Services Office, CDC, pursuant to Section 10(d) of Public Law 92-463. Matters To Be Discussed: The meeting...

The Hydro-Economic Interdependency of Cities: Virtual Water Connections of the Phoenix, Arizona Metropolitan Area

Directory of Open Access Journals (Sweden)

Richard R. Rushforth

2015-06-01

Full Text Available Water footprinting has revealed hydro-economic interdependencies between distant global geographies via trade, especially of agricultural and manufactured goods. However, for metropolitan areas, trade not only entails commodity flows at many scales from intra-municipal to global, but also substantial intra-metropolitan flows of the skilled labor that is essential to a city’s high-value economy. Virtual water flows between municipalities are directly relevant for municipal water supply policy and infrastructure investment because they quantify the hydro-economic dependency between neighboring municipalities. These municipalities share a physical water supply and also place demands on their neighbors’ water supplies by outsourcing labor and commodity production outside the municipal and water supply system boundary to the metropolitan area. Metropolitan area communities span dense urban cores to fringe agricultural towns, spanning a wide range of the US hydro-economy. This study quantifies water footprints and virtual water flows of the complete economy of the Phoenix Metropolitan Area’s municipalities. A novel approach utilized journey to work data to estimate virtual water flows embedded in labor. Commodities dominate virtual water flows at all scales of analysis, however labor is shown to be important for intra-metropolitan virtual water flows. This is the first detailed water footprint analysis of Phoenix, an important city in a water-scarce region. This study establishes a hydro-economic typology for communities to define several niche roles and decision making points of view. This study’s findings can be used to classify communities with respect to their relative roles, and to benchmark future improvements in water sustainability for all types of communities. More importantly, these findings motivate cooperative approaches to intra-metropolitan water supply policy that recognize the hydro-economic interdependence of these

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.

2013-10-02

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

Urban food security at the crossroads between metropolitan food planning and global trade

NARCIS (Netherlands)

Wascher, Dirk Michael; Jeurissen, Leonne

2017-01-01

Making use of Life Cycle Thinking, the Metropolitan Foodscape Planner (MFP) tool provides ecological footprint maps and supply/demand data showing a large potential for metropolitan food supplies. In the discussion, we examine these results in the light of recent research on the impacts of the

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-12-01

This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Growth In SNAP Retailers Was Associated With Increased Client Enrollment In Georgia During The Great Recession.

Science.gov (United States)

Shannon, Jerry; Shannon, Sarah; Adams, Grace Bagwell; Lee, Jung Sun

2016-11-01

Policies to improve food accessibility in underserved areas often use direct financial incentives to attract new food retailers. Our analysis of data on the Supplemental Nutrition Assistance Program (SNAP) in Georgia before and after the Great Recession suggests that increased program enrollment improves access to food for SNAP beneficiaries by acting as an indirect subsidy to retailers. We divided food stores into four categories: large, midsize, small, and specialty retailers. Between 2008 and 2011 the number of SNAP enrollees increased by 87 percent, and between 2007 and 2014 the number of SNAP retailers in Georgia increased by 82 percent, primarily because of growth in the number of authorized small retailers. Inside metropolitan Atlanta, changes in the numbers of SNAP enrollees and authorized retailers were positively and significantly associated for small retailers. For the areas outside of metropolitan Atlanta, the association between changes in numbers of enrollees and authorized retailers was strongest for small retailers; more modest associations were also seen for large and specialty retailers. Policy makers should consider how retailers' sensitivity to and reliance on SNAP funding can be leveraged to improve not only food availability, but also access to healthy foods. Project HOPE—The People-to-People Health Foundation, Inc.

[Urban and population development of the city of Puebla and its metropolitan area].

Science.gov (United States)

Barbosa Prieto, A

1991-12-01

Metropolitanization has been considered an important problem of regional development in developing countries. Attitudes toward the metropolis have been ambivalent in Latin America. On the 1 hand the metropolis is viewed as an obstacle to development that absorbs resources from the zone of influence and incurs high social costs of urbanization, but on the hand it is also viewed as a form of achieving levels of economic efficiency comparable to those of developed countries. Metropolitan areas should not be viewed as isolated, but rather as important points of demographic and manpower attraction, poles of economic growth and technological and cultural innovation. "Urban areas" and "metropolitan zones" are distinct ways of defining and delimiting urban phenomena. Although there is no consensus as to the exact definitions of these 2 urban units, it is generally accepted that the urban area is the city itself as well as the contiguous built up area reaching in all directions to the onset of nonurban land uses such as forests territorial extension that includes the politico-administrative units with urban characteristics such as work places and residences for nonagricultural workers, and that maintain constant and intense socioeconomic interrelations with the central city. The process of urban planning in the metropolitan zone of Puebla, Mexico, began in institutional form in 1980 with master plans for the population centers of Puebla, Amozoc, San Andres and San Pedro Cholula, and Zacatelco in the state of Tlaxcala. In 1987., an attempt was made by the governments of the states of Puebla and Tlaxcala to develop a plan for the metropolitan zone as a single unit. Population growth was greater within the city of Puebla than in the metropolitan zone from 1960-80, but after 1980 growth in the outlying areas exceeded that in the center city. The population density of the city of Puebla declined from 160/hectare in 1950 to 76/hectare in 1990, the result of progressive dispersion

Uber and Metropolitan Traffic Fatalities in the United States.

Science.gov (United States)

Brazil, Noli; Kirk, David S

2016-08-01

Uber and similar rideshare services are rapidly dispersing in cities across the United States and beyond. Given the convenience and low cost, Uber has been characterized as a potential countermeasure for reducing the estimated 121 million episodes of drunk driving and the 10,000 resulting traffic fatalities that occur annually in the United States. We exploited differences in the timing of the deployment of Uber in US metropolitan counties from 2005 to 2014 to test the association between the availability of Uber's rideshare services and total, drunk driving-related, and weekend- and holiday-specific traffic fatalities in the 100 most populated metropolitan areas in the United States using negative binomial and Poisson regression models. We found that the deployment of Uber services in a given metropolitan county had no association with the number of subsequent traffic fatalities, whether measured in aggregate or specific to drunk-driving fatalities or fatalities during weekends and holidays. © The Author 2016. Published by Oxford University Press on behalf of the Johns Hopkins Bloomberg School of Public Health. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Twelve metropolitan carbon footprints. A preliminary comparative global assessment

International Nuclear Information System (INIS)

Sovacool, Benjamin K.; Brown, Marilyn A.

2010-01-01

A dearth of available data on carbon emissions and comparative analysis between metropolitan areas make it difficult to confirm or refute best practices and policies. To help provide benchmarks and expand our understanding of urban centers and climate change, this article offers a preliminary comparison of the carbon footprints of 12 metropolitan areas. It does this by examining emissions related to vehicles, energy used in buildings, industry, agriculture, and waste. The carbon emissions from these sources - discussed here as the metro area's partial carbon footprint - provide a foundation for identifying the pricing, land use, help metropolitan areas throughout the world respond to climate change. The article begins by exploring a sample of the existing literature on urban morphology and climate change and explaining the methodology used to calculate each area's carbon footprint. The article then depicts the specific carbon footprints for Beijing, Jakarta, London, Los Angeles, Manila, Mexico City, New Delhi, New York, Sao Paulo, Seoul, Singapore, and Tokyo and compares these to respective national averages. It concludes by offering suggestions for how city planners and policymakers can reduce the carbon footprint of these and possibly other large urban areas. (author)

Assessing the Impact of Chlorinated-Solvent Sites on Metropolitan Groundwater Resources

OpenAIRE

Brusseau, Mark L.; Narter, Matthew

2013-01-01

Chlorinated-solvent compounds are among the most common groundwater contaminants in the U.S.A. The majority of the many sites contaminated by chlorinated-solvent compounds are located in metropolitan areas, and most such areas have one or more chlorinated-solvent contaminated sites. Thus, contamination of groundwater by chlorinated-solvent compounds may pose a potential risk to the sustainability of potable water supplies for many metropolitan areas. The impact of chlorinated-solvent sites on...

Tracking the deployment of the integrated metropolitan ITS infrastructure in Orlando : FY99 results

Science.gov (United States)

2000-01-01

In January 1996, Secretary Pea set a goal of deploying the integrated metropolitan Intelligent Transportation System (ITS) infrastructure in 75 of the nations largest metropolitan areas by 2006. In 1997, the U.S. Department of Transportation ini...

New Metropolitan Spaces and Metropolitan Strategies in the Face of Modernisation

Directory of Open Access Journals (Sweden)

Willem Salet

2007-10-01

Full Text Available Au début du xxie siècle, les espaces urbains traversent une période de croissance et de transformation radicale. Les villes s’étendent de plus en plus. Leur configuration spatiale devient de plus en plus décentralisée et fragmentée. La dichotomie traditionnelle entre hiérarchie urbaine et périphérie est en train de disparaître. Les nouveaux espaces métropolitains sont caractérisés par des processus de segmentation et de spécialisation à distance ainsi que par des polarisations sociales qui structurent l’espace. Les tentatives de planification des villes-régions essaient de rééquilibrer ces processus qui font éclater la ville. Cet article explore brièvement les transformations métropolitaines actuelles en utilisant une approche générique. Il se focalise également sur les stratégies des métropoles pour affronter ces défis dans le cadre de situations institutionnelles variées, un peu partout en Europe. En troisième lieu, cet article interroge les effets potentiels des projets urbains sur un rééquilibrage des transformations urbaines. Comment les grands projets urbains sont-ils conceptuellement élaborés ? Comment les alliances d’acteurs qui les soutiennent se forgent-elles ? Comment les citoyens et les groupes sociaux sont-ils impliqués de manière à produire de nouveaux espaces plus intégrés ?At the beginning of the 21st century, urban spaces can be said to be in a stage of growth and radical transformation. Cities are highly expansive, both in scale and scope. The spatial configuration of urban spaces is, however, becoming more and more decentralised and fragmentary. The traditional dichotomy between urban hierarchy and periphery is disappearing. New metropolitan spaces are characterised by distance related processes of social and economic specialisation and segmentation, and often also by splitting social polarisation. The planning agendas in city regions are trying to make add more balance to the

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

International Nuclear Information System (INIS)

Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

2014-01-01

The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

75 FR 40726 - Revisions to the California State Implementation Plan, Sacramento Metropolitan Air Quality...

Science.gov (United States)

2010-07-14

... the California State Implementation Plan, Sacramento Metropolitan Air Quality Management District and South Coast Air Quality Management District AGENCY: Environmental Protection Agency (EPA). ACTION... Metropolitan Air Quality Management District (SMAQMD) and South Coast Air Quality Management District (SCAQMD...

Usage of Social Media in City Marketing: A Research on 30 Metropolitan Municipalities in Turkey

Directory of Open Access Journals (Sweden)

Niyazi Gümüş

2017-01-01

Full Text Available Rapid changes in information and communication technologies cause serious developments in marketing field similar to every sector. In parallel with these developments, the social media channels which appear as Web 2.0 applications have a number of advantages in comparison with traditional media channels. Social media gained a place in marketing activities because of its advantages. Social media is added on instruments in line with these developments that countries benefit in marketing activities for attracting more tourists, investment and becoming prominent against the other cities. Cities intensively benefit from social media because of social media’s properties like reaching the large masses, low marketing cost, interaction, receiving feedbacks rapidly, etc. Within this context, the purpose of this research is to determine the use statuses of social media by metropolitan municipalities as part of city marketing. In accordance with this purpose, official social media accounts of 30 metropolitan municipalities are investigated between the dates of 01/09/2016 and 30/09/2016, then their shares in social media channels are investigated in the context of city marketing.It is observed that two metropolitan municipalities do not have official Facebook accounts, four metropolitan municipalities do not have an official Twitter account as well. Again, it is found that 19 metropolitan municipalities do not have an official Instagram account and 17 metropolitan municipalities do not have official YouTube account. In consequence, it is observed that, our metropolitan municipalities do not benefit from social media effectively for city marketing activities.

Urban Growth Areas, This Layer represents the current Urbanized Area for Atlanta as defined by the U.S. Census Bureau. An Urbanized Area is a concept used by the U.S. Census Bureau to measure the population, land area and population density of a built-up or continuously deve, Published in 2000, 1:100000 (1in=8333ft) scale, Atlanta Regional Commission.

Data.gov (United States)

NSGIC Regional | GIS Inventory — Urban Growth Areas dataset current as of 2000. This Layer represents the current Urbanized Area for Atlanta as defined by the U.S. Census Bureau. An Urbanized Area...

75 FR 40762 - Revisions to the California State Implementation Plan, Sacramento Metropolitan Air Quality...

Science.gov (United States)

2010-07-14

... the California State Implementation Plan, Sacramento Metropolitan Air Quality Management District and South Coast Air Quality Management District AGENCY: Environmental Protection Agency (EPA). ACTION: Proposed rule. SUMMARY: EPA is proposing to approve revisions to the Sacramento Metropolitan Air Quality...

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

Science.gov (United States)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

International Nuclear Information System (INIS)

Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

2013-01-01

Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

ELECTRICITY DEMAND IN A NORTHERN MEXICO METROPOLITAN ECONOMY

Directory of Open Access Journals (Sweden)

Thomas M. Fullerton

2014-10-01

Full Text Available Using an error correction framework, this study analyzes the long- and short-run dynamics of electricity demand in Ciudad Juarez, a large metropolitan economy on Mexico’s northern border. Demand is decomposed into the total number of electricity accounts and electricity usage per customer, each of which is modeled separately. A two-stage least squares approach is used to estimate the per customer electricity demand equations due to the endogeneity of the average price variable. The results indicate sustained growth in population, employment, and income can be expected to exert substantial upward pressure on regional electric power demand. Furthermore, demand is found to be price-inelastic in this metropolitan area, suggesting that rate increases can help raise the revenues necessary to fund expansion of the electrical grid.

Drugs + HIV, Learn the Link

Medline Plus

Full Text Available ... please visit: https://www.aids.gov/hiv-aids-basics/hiv-aids-101/statistics/ . Reference Centers for Disease ... About HIV/AIDS. ( https://www.cdc.gov/actagainstaids/basics/whatishiv.html ). Atlanta, GA: CDC, DHHS. Retrieved November ...

Drugs + HIV, Learn the Link

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Full Text Available ... www.cdc.gov/actagainstaids/basics/whatishiv.html ). Atlanta, GA: CDC, DHHS. Retrieved November 2017. How are Drug ... lead people to engage in impulsive and unsafe behaviors. Injection drug use. People typically associate drug misuse ...

Drugs + HIV, Learn the Link

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Full Text Available ... AIDS. ( https://www.cdc.gov/actagainstaids/basics/whatishiv.html ). Atlanta, GA: CDC, DHHS. Retrieved November 2017. How ... www.cdc.gov/hiv/risk/age/youth/index.html​ . Resources Publications Drug Facts: Drug Use and Viral ...

History of Bioterrorism: Botulism

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Full Text Available ... is Doing Blog: Public Health Matters Video: "The History of Bioterrorism" Recommend on Facebook Tweet Share Compartir ... OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO (800-232-4636) , TTY: 888- ...

ECV profiling of GaAs and GaN HEMT heterostructures

Science.gov (United States)

Yakovlev, G.; Zubkov, V.

2018-03-01

AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Islam in Diaspora: Shari’a Law, Piety and Brotherhood at al-Farooq Mosque, Atlanta

Directory of Open Access Journals (Sweden)

Mohamad Abdun Nasir

2016-06-01

[Tulisan ini mengkaji praktik ritual shalat hari raya (Eid di masjid al-Farooq Atlanta, Amerika Serikat pada kalangan muslim perantauan dari berbagai belahan dunia. Kajian ini, dengan menggunakan pendekatan tektual dan etnografi, mengamati penerapan hukum Islam dalam hal peribadatan dan pemaknaan serta pengalaman ritual diantara mereka. Studi ini menunjukkan bahwa shalat hari raya memberi makna dan pengalaman khusus. Perayaan ini dilihat sebagai medium untuk menunjukkan kesalehan dan menguatkan ikatan persaudaraan sesama muslim meskipun mempunyai latar belakang etnik dan budaya yang berbeda. Meskipun demikian, inti dari ritual tersebut menunjukkan aliran mazhab Hanafi. Pelaksanaan fiqih dalam sholat Eid tetap berpegang pada Qur’an dan Hadits. Dengan kata lain, konteks geografi dan budaya yang berbeda telah membentuk makna baru namun tetap tidak merubah inti dari praktik ibadah yang bermazhab Hanafi.

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

2007-01-01

Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

International Nuclear Information System (INIS)

Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

2015-01-01

In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

78 FR 10589 - Revision of Air Quality Implementation Plan; California; Sacramento Metropolitan Air Quality...

Science.gov (United States)

2013-02-14

... Quality Implementation Plan; California; Sacramento Metropolitan Air Quality Management District... Sacramento Metropolitan Air Quality Management District (SMAQMD or District) portion of the California State... sources within the areas covered by the plan as necessary to assure that the National Ambient Air Quality...

Recognition of management structure and spatial planning in Tehran metropolitan area

Directory of Open Access Journals (Sweden)

Manijeh Lalehpour

2016-06-01

Full Text Available Metropolitan areas are concentrated and dense areas filled settlements and include a central urban region with its surrounding residences. Severity and complexity of issues in metropolitan areas along with intricacy and quantity of influential factors in these areas necessitate novel approaches and innovative solutions for comprehensive strategies and management coordination of land use in these regions. The present study has taken this approach to investigate management structure and spatial planning in Tehran metropolitan area. The study takes parameters like political and management decentralization, elements affecting urban management based on the sources of power and province and finally spatial domain of urban management into account. Findings revealed that decentralization in national management and political structure has limited tasks and authority of urban management. In this regard, a closer look at management structure and spatial planning of Tehran metropolitan are demonstrates that the government and its element dominate policy making, planning and spatial management of the city and inherent position of municipality and city council suffer weaknesses in their role as urban management. Results from investigating official tasks in urban management elements and their spatial domain reveals lack of coordination and Fragmentation in management structure and spatial planning in the region. The paper attempts to discuss these Fragmentation in the fields of management, function, politics and domains.

Task Force on Women, Minorities and the Handicapped in Science and Technology: Executive Session. Report of the Proceedings (Atlanta, Georgia, March 3, 1988).

Science.gov (United States)

Task Force on Women, Minorities, and the Handicapped in Science and Technology, Washington, DC.

The Task Force on Women, Minorities, and the Handicapped in Science and Technology was established by the U.S. Congress in Public Law 99-383 with the purpose of developing a long-range plan for broadening participation in science and engineering. Public hearings were held in Albuquerque (New Mexico), Atlanta (Georgia), Baltimore (Maryland), Boston…

Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

2008-01-01

We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

International Nuclear Information System (INIS)

Lenka, T. R.; Panda, A. K.

2011-01-01

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Revenues for Education in Metropolitan Areas. Chapter VI, Metropolitanism: Its Challenge to Education, 1968. Sixty-seventh Yearbook, Part I.

Science.gov (United States)

Alkin, Marvin C.

For local school districts to provide equal educational opportunities throughout a metropolitan area, a school organization plan should distribute populations among districts in such a manner as to maximize the aggregate expressed demand for educational services and to provide relatively equal financial support. Consolidation of contiguous…

Evaluation of the external costs of energy production in the Helsinki metropolitan area

International Nuclear Information System (INIS)

Otterstroem, T.

1995-01-01

The aim of the research is to evaluate the external costs of energy production at Helsinki metropolitan area (Helsinki, Espoo, Vantaa). The previously developed valorization method for effects on population centres is adjusted. All the main health, material and environmental effects will be taken into account in the research. The effects of emissions of the energy production of the Helsinki metropolitan area on concentrations of the impurities in the air and through them on human and environment will be evaluated. The estimates will be based on the relativistic fuels consumption and the emission data of Helsinki metropolitan area. Life-cycle reasoning will be applied so that the emissions of the main components of the fuels used in the metropolitan area will be included in the estimation. The cost-effectiveness of the investments will be estimated by comparing the environmental investments of energy boards with the external costs. The methods of this work can be applied to estimation of the profitability of energy production plants from the point of view of national economy also elsewhere in the country

A REGIONAL APPROACH TO THE METROPOLITAN ECONOMIC GROWTH: EVIDENCE FROM THE EUROPEAN UNION

Directory of Open Access Journals (Sweden)

Florin Teodor Boldeanu

2016-09-01

Full Text Available The main goal of this study is to contribute to metropolitan economic growth literature by carrying out an analysis for 271 areas located in the EU between 2000 and 2013. For this objective the study uses several panel data estimation techniques, namely the GMM, System GMM and the QML estimation. To check the robustness of the results, the time period is divided in two (post and ante economic crisis and by splitting the sample of metropolitan regions in two components, the Western more developed regions and the Central and South-Eastern (the formal communist states, except for Cyprus areas. The results indicate that the industrial, construction and wholesale and retail trade sectors are positively linked with metropolitan growth. The agricultural, fishery and forestry sector is negatively influencing growth. The manufacturing and ITC sectors and migration are not statistically significant. Furthermore population density and size is more important than population growth and European enlargement did not have a substantial positive impact on metropolitan growth for the Central and South-Eastern regions.

Drugs + HIV, Learn the Link

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Full Text Available ... www.cdc.gov/actagainstaids/basics/whatishiv.html ). Atlanta, GA: CDC, DHHS. Retrieved November 2017. How are Drug ... al. “Methamphetamine increases brain viral load and activates natural killer cells in simian immunodeficiency virus-infected monkeys. ...

Drugs + HIV, Learn the Link

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Full Text Available ... www.cdc.gov/actagainstaids/basics/whatishiv.html ). Atlanta, GA: CDC, DHHS. Retrieved November 2017. How are Drug ... HIV in brain cells 1 . Drug use disorder treatment. Since the late 1980s, research has shown that ...

History of Bioterrorism: Botulism

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Full Text Available ... and Public Health Response," co-produced by the United States Army Medical Research Institute of Infectious Diseases (USAMRIID), ... OIG 1600 Clifton Road Atlanta , GA 30329-4027 USA 800-CDC-INFO (800-232-4636) , TTY: 888- ...

Kansas City Metropolitan Community Colleges. Audit Report.

Science.gov (United States)

Missouri Office of the State Auditor, Jefferson City.

This audit report reviews the employment contracts, related compensation, and other benefits provided for the chancellor and other officers of the Kansas City Metropolitan Community Colleges (KCMCC) in Missouri. The chancellor is allowed to either solicit bids or negotiate for contracted services such as architects, construction managers,…

Modeling of Optimization and Control of EBW Heating and Current Drive

Czech Academy of Sciences Publication Activity Database

Urban, Jakub; Decker, J.; Peysson, Y.; Preinhaelter, Josef; Vahala, L.; Vahala, G.

2009-01-01

Roč. 54, č. 15 (2009), s. 100-100 ISSN 0003-0503. [Annual Meeting of the APS Division of Plasma Physics/51st./. Atlanta, 02.11.2009-06.11.2009] R&D Projects: GA MŠk 7G09042; GA ČR GA202/08/0419 Institutional research plan: CEZ:AV0Z20430508 Keywords : Tokamak * Electron Bernstein wave * EBW * NSTX Subject RIV: BL - Plasma and Gas Discharge Physics http://meetings.aps.org/link/BAPS.2009.DPP.JO4.16

They "miss more than anything their normal life back home": masculinity and extramarital sex among Mexican migrants in Atlanta.

Science.gov (United States)

Hirsch, Jennifer S; Muñoz-Laboy, Miguel; Nyhus, Christina M; Yount, Kathryn M; Bauermeister, José A

2009-03-01

Gender has been recognized as a significant influence on sexual health behaviors. Labor migration presents an important context of vulnerability for sexual health. To understand how the context of migration affects risk-related practices, both cultural and social aspects of gender need to be explored. In the quantitative part of a mixed-methods study conducted in 1999 in Atlanta, 187 Mexican migrant men were asked about their demographic characteristics; sexual history; migration motivations; substance use; social support; leisure-time activities; and ideas about masculinity, sexuality and marriage. Multivariate regression analyses were conducted to test the association between these domains and men's number of partners since their arrival in Atlanta. Number of partners was positively associated with owning a home in Mexico; number of trips back to Mexico; social network size; having had a sex worker as a partner; and going out dancing and to strip clubs on weekends (coefficients, 0.3-4.1). It was negatively associated with age, education, contact with social network members and feeling that sex is tied to emotional intimacy (-0.4 to -1.0). Programs must acknowledge and target migrant men's social networks and the spaces in which they may encounter risky sexual situations. Multilevel strategies, such as the development of more health-enhancing community spaces and the promotion of safer sexual practices should form part of comprehensive efforts to reduce sexual risk among migrant men.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

2015-01-01

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

Strain-balanced InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2014-07-21

InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

23 CFR 420.109 - What are the requirements for distribution of metropolitan planning funds?

Science.gov (United States)

2010-04-01

... and Research Funds § 420.109 What are the requirements for distribution of metropolitan planning funds... 23 Highways 1 2010-04-01 2010-04-01 false What are the requirements for distribution of metropolitan planning funds? 420.109 Section 420.109 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF...

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

Science.gov (United States)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

Science.gov (United States)

Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

2014-01-01

Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

Directory of Open Access Journals (Sweden)

María Luisa Soto-Montenegro

Full Text Available The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts.The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined.Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC.This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

Social, economic, and political processes that create built environment inequities: perspectives from urban African Americans in Atlanta.

Science.gov (United States)

Redwood, Yanique; Schulz, Amy J; Israel, Barbara A; Yoshihama, Mieko; Wang, Caroline C; Kreuter, Marshall

2010-01-01

Growing evidence suggests that the built environment features found in many high-poverty urban areas contribute to negative health outcomes. Both built environment hazards and negative health outcomes disproportionately affect poor people of color. We used community-based participatory research and Photovoice in inner-city Atlanta to elicit African Americans' perspectives on their health priorities. The built environment emerged as a critical factor, impacting physical and mental health outcomes. We offer a conceptual model, informed by residents' perspectives, linking social, economic, and political processes to built environment and health inequities. Research, practice, and policy implications are discussed within an environmental justice framework.

Heterogeneous Structure and Seismicity beneath the Tokyo Metropolitan Area

Science.gov (United States)

Nakagawa, S.; Kato, A.; Sakai, S.; Nanjo, K.; Panayotopoulos, Y.; Kurashimo, E.; Obara, K.; Kasahara, K.; Aketagawa, T.; Kimura, H.; Hirata, N.

2010-12-01

Beneath the Tokyo metropolitan area, the Philippine Sea Plate (PSP) subducts and causes damaged mega-thrust earthquakes. Sato et al. (2005) revealed the geometry of upper surface of PSP, and Hagiwara et al. (2006) estimated the velocity structure beneath Boso peninsula. However, these results are not sufficient for the assessment of the entire picture of the seismic hazards beneath the Tokyo metropolitan area including those due to an intra-slab M7+ earthquake. So, we launched the Special Project for Earthquake Disaster Mitigation in the Tokyo Metropolitan area (Hirata et al., 2009). Proving the more detailed geometry and physical properties (e.g. velocities, densities, attenuation) and stress field within PSP is very important to attain this issue. The core item of this project is a dense seismic array called Metropolitan Seismic Observation network (MeSO-net) for making observations in the metropolitan area (Sakai and Hirata, 2009; Kasahara et al., 2009). We deployed the 249 seismic stations with a spacing of 5 km. Some parts of stations construct 5 linear arrays at interval of 2 km such as Tsukuba-Fujisawa (TF) array, etc. The TF array runs from northeast to southwest through the center of Tokyo. In this study, we applied the tomography method to image the heterogeneous structure under the Tokyo metropolitan area. We selected events from the Japan Meteorological Agency (JMA) unified earthquake list. All data of MeSO-net were edited into event data by the selected JMA unified earthquake list. We picked the P and S wave arrival times. The total number of stations and events are 421 and 1,256, respectively. Then, we applied the double-difference tomography method (Zhang and Thurber, 2003) to this dataset and estimated the fine-scale velocity structure. The grid nodes locate 10 km interval in parallel with the array, 20 km interval in perpendicular to the array; and on depth direction, 5 km interval to a depth of less than 50 km and 10 km interval at a depth of more

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Science.gov (United States)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Energy Technology Data Exchange (ETDEWEB)

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

OpenAIRE

Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

2014-01-01

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

Science.gov (United States)

Abdullah, Rafid A.; Ibrahim, Kamarulazizi

2010-07-01

ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

Engaging with sustainability issues in metropolitan Chennai

NARCIS (Netherlands)

Kennedy, L.; Varrel, A.; Denis, E.; Dupont, V.; Dhanalakshmi, R.; Roumeau, S.; Baud, I.; Pfeffer, K.; Sridharan, N.; Vijayabaskar, M.; Suresh Babu, M.; Seifelislam, A.; Rouanet, H.; Saharan, T.

2014-01-01

Chennai is the largest metropolitan city in South India (8.7 million in 2011) and the provincial capital of the large state of Tamil Nadu (population 72 million in 2011). Before that, under British rule, the city was the capital of the Madras Presidency, and was known as Madras until 1996, when the

Selected papers from the 12th International Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2012) (Atlanta, GA, USA, 2-5 December 2012)

Science.gov (United States)

Allen, Mark G.; Lang, Jeffrey

2013-11-01

Welcome to this special section of the Journal of Micromechanics and Microengineering (JMM). This section, co-edited by myself and by Professor Jeffrey Lang of the Massachusetts Institute of Technology, contains expanded versions of selected papers presented at the Power MEMS meeting held in Atlanta, GA, USA, in December of 2012. Professor Lang and I had the privilege of co-chairing Power MEMS 2012, the 12th International Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications. The scope of the PowerMEMS series of workshops ranges from basic principles, to materials and fabrication, to devices and systems, to applications. The many applications of power MEMS (microelectromehcanical systems) range from MEMS-enabled energy harvesting, storage, conversion and conditioning, to integrated systems that manage these processes. Why is the power MEMS field growing in importance? Smaller-scale power and power supplies (microwatts to tens of watts) are gaining in prominence due to many factors, including the ubiquity of low power portable electronic equipment and the proliferation of wireless sensor nodes that require extraction of energy from their embedding environment in order to function. MEMS manufacturing methods can be utilized to improve the performance of traditional power supply elements, such as allowing batteries to charge faster or shrinking the physical size of passive elements in small-scale power supplies. MEMS technologies can be used to fabricate energy harvesters that extract energy from an embedding environment to power wireless sensor nodes, in-body medical implants and other devices, in which the harvesters are on the small scales that are appropriately matched to the overall size of these microsystems. MEMS can enable the manufacturing of energy storage elements from nontraditional materials by bringing appropriate structure and surface morphology to these materials as well as fabricating the electrical interfaces

Cognitive Development of Children with Craniosynostosis

OpenAIRE

J Gordon Millichap

2015-01-01

Investigators from University of Washington, Seattle, WA; Harvard U, MA; St Louis, MO; Atlanta, GA; Northwestern U, and Shriner’s Hospital, Chicago, compared the development of school-aged children with single-suture craniosynostosis (sagittal, metopic, unicoronal, lambdoid) and unaffected children.

ADHD Symptoms and Likelihood of Child Maltreatment

Directory of Open Access Journals (Sweden)

J Gordon Millichap

2008-12-01

Full Text Available The relationship between inattentive and hyperactivity symptoms and child maltreatment was studied among a sample of 14,322 participants in the National Longitudinal Study of Adolescent Healh at the Centers for Disease Control and Prevention, Atlanta, GA.

76 FR 61255 - Airworthiness Directives; Honeywell International Inc. TPE331 Model Turboprop Engines With...

Science.gov (United States)

2011-10-04

... Certification Office, FAA, Atlanta Aircraft Certification Office, 1701 Columbia Avenue, College Park, GA 30337... Airworthiness Directives; Honeywell International Inc. TPE331 Model Turboprop Engines With Certain Dixie... Honeywell International Inc. TPE331 model turboprop engines with a part manufacturer approval (PMA...

78 FR 70550 - Announcement of the Board of Directors for the National Environmental Education Foundation

Science.gov (United States)

2013-11-26

... development. It provides the common ground upon which leaders from business and industry, all levels of..., Miami, FL Wonya Lucas, President, Lucas Strategic Consulting, Atlanta, GA Trish Silber, President..., Washington, DC Shannon Schuyler, Principal, Corporate Responsibility Leader, PricewaterhouseCoopers (PwC...

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Science.gov (United States)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Carrier quenching in InGaP/GaAs double heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

2015-08-14

Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

Atmospheric pollution biomonitoring of the Sao Paulo metropolitan region using epiphytic lichens

International Nuclear Information System (INIS)

Fuga, Alessandra

2006-01-01

Due to the increasing problems of atmospheric pollution in the Sao Paulo metropolitan region that affect the environment and human health the application of biomonitoring methodologies using cosmopolite organisms has now become relevant. Biomonitoring is a method to evaluate the response of live organisms to pollution. This method offers advantages such as reduced costs, efficient monitoring of large geographic areas and accumulated pollutants over a large period in which low concentrations of chemicals elements in the environment can be evaluated. In the present study, neutron activation analysis method was applied to determine elements accumulated in Canoparmelia texana lichenized fungi. Samples were collected in two distinct areas: Carlos Botelho (PECB) and Intervales (PEI) State Parks that are considered as non-polluted areas and that belong to the Atlantic Forest - SP ecosystem; and Sao Paulo city metropolitan region in sites near automatic monitoring stations of the Environmental Protection Agency of the State of Sao Paulo (CETESB). The lichens collected from the bark of the trees were properly treated, and irradiated with neutrons from IEA-R1 nuclear reactor along with synthetic standards of elements. The precision and the accuracy of the results were evaluated by the analyses of IAEA-336 LICHEN and Mixed Polish Herbs (INCT -MPH-2) certified reference materials. The results obtained for these materials were in accordance with the certified values and presented good precision with variation coefficients ranging from 0.9 to 14.6%. Results obtained for lichens showed that elements As, Co, Cr, Cs, La, Mo, Sb, Sc, Se and U are present at ng g -1 levels, Ba, Br, Cl, Fe, K, Mn, Na, Rb and Zn at μg g -1 and Ca at mg g -1 . By applying cluster and discriminant analyses to the results for the lichen samples from areas with different levels of pollution, the sampling sites were grouped according to their chemical similarities and their elemental composition. It was

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Growth of (20 anti 21)AlGaN, GaN and InGaN by metal organic vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Wernicke, T.; Rass, J.; Pristovsek, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2012-07-01

Green InGaN-based laser diodes on (20 anti 21)GaN substrates have recently demonstrated performances exceeding those of conventional (0001) oriented devices. However little is known regarding the growth parameters. We have investigated growth of AlGaN, GaN and InGaN on (20 anti 21)GaN substrates by MOVPE. Smooth GaN layers with a rms roughness <0.5 nm were obtained by low growth temperatures and reactor pressures. The layers exhibit undulations along [10 anti 14] similar to the GaN substrate. AlGaN and InGaN layers exhibit an increased surface roughness. Undulation bunching was observed and attributed to reduced adatom surface mobility due to the binding energy of Al and the low growth temperature for InGaN respectively or strain relaxation. AlGaN and InGaN heterostructures on (20 anti 21)GaN relax by layer tilt accompanied by formation of misfit dislocations, due to shear strain of the unit cell. This relaxation mechanism leads to a reduced critical layer thickness of (20 anti 21)AlGaN layers and InGaN multi quantum wells (MQW) in comparison to (0001). PL spectral broadening of 230 meV of (20 anti 21)InGaN single QWs emitting at 415 nm can be reduced by increased growth temperature or increased number of QWs with reduced thickness.

Exciton binding energy in wurtzite InGaN/GaN quantum wells

International Nuclear Information System (INIS)

Park, Seoung-Hwan; Kim, Jong-Jae; Kim, Hwa-Min

2004-01-01

The internal field and carrier density effects on the exciton binding energies in wurtzite (WZ) InGaN/GaN quantum-well (QW) structures are investigated using the multiband effective-mass theory, and are compared with those obtained from the at-band model and with those of GaN/AlGaN QW structures. The exciton binding energy is significantly reduced with increasing sheet carrier density, suggesting that excitons are nearly bleached at densities around 10 12 cm -2 for both InGaN/GaN and GaN/AlGaN QW structures. With the inclusion of the internal field, the exciton binding energy is substantialy reduced compared to that of the at-band model in the investigated region of the wells. This can be explained by a decrease in the momentum matrix element and an increase in the inverse screening length due to the internal field. The exciton binding energy of the InGaN/GaN structure is smaller than that of the GaN/AlGaN structure because InGaN/GaN structures have a smaller momentum matrix element and a larger inverse screening length than GaN/AlGaN structures.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

Directory of Open Access Journals (Sweden)

P. C. Chang

2014-01-01

Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Oswald, Jiří; Vyskočil, Jan; Kuldová, Karla; Šimeček, Tomislav; Hazdra, P.; Caha, O.

2010-01-01

Roč. 312, č. 8 (2010), 1383-1387 ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.737, year: 2010

InGaN nanoinclusions in an AlGaN matrix

International Nuclear Information System (INIS)

Sizov, V. S.; Tsatsul'nikov, A. F.; Lundin, V. V.

2008-01-01

GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of structures in a temperature range of 80-300 K and at various pumping densities, and electroluminescence spectra are obtained for light-emitting (LED) structures with various types of active region. It is shown that the structures with quantum dots in the AlGaN matrix are more stable thermally due to the larger localization energy compared with quantum dots in the GaN matrix. Due to this, the LED structures with quantum dots in an AlGaN matrix are more effective.

70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

Radiative and non-radiative recombination in GaInN/GaN quantum wells; Strahlende und nichtstrahlende Rekombination in GaInN/GaN-Quantenfilmen

Energy Technology Data Exchange (ETDEWEB)

Netzel, C.

2007-02-08

The studies presented in this thesis deal with the occurence of V defectsin GaInN/GaN quantum film structures grown by means of organometallic gas phase epitaxy, and the effects, which have the V defects respectively the GaInN quantum films on the V-defect facets on the emission and recombination properties of the whole GaInN/GaN quantum film structure. The V-defects themselves, inverse pyramidal vacancies with hexagonal base in the semiconductor layers, arise under suitable growth conditions around the percussion violations, which extend in lattice-mismatched growth of GaN on the heterosubstrates sapphire or silicon carbide starting in growth direction through the crystal. If GaInN layers are grown over V-defect dispersed layers on the (1-101) facets of the V defects and the (0001) facets, the growth front of the structure, different growth velocities are present, which lead to differently wide GaInN quantum films on each facets.

Governing metropolitan green infrastructure in the United States

Science.gov (United States)

Robert F. Young; E. Gregory McPherson

2013-01-01

In this paper we explore whether the enhancement of urban ecosystem services through largescale metropolitan treeplanting initiatives is being planned and executed as a component of traditional municipal government or represents new transdisciplinary strategies in environmental governance Drawing on qualitative interviews with...

Cubic AlGaN/GaN structures for device application

Energy Technology Data Exchange (ETDEWEB)

Schoermann, Joerg

2007-05-15

The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

Edge Thomson scattering diagnostic on COMPASS tokamak: Installation, calibration,operation, improvements

Czech Academy of Sciences Publication Activity Database

Böhm, Petr; Aftanas, Milan; Bílková, Petra; Štefániková, Estera; Mikulín, Ondřej; Melich, Radek; Janky, Filip; Havlíček, Josef; Šesták, David; Weinzettl, Vladimír; Stöckel, Jan; Hron, Martin; Pánek, Radomír; Scannell, R.; Frassinetti, L.; Fassina, A.; Naylor, G.; Walsh, M.J.

2014-01-01

Roč. 85, č. 11 (2014), 11E431-11E431 ISSN 0034-6748. [Topical Conference on High-Temperature Plasma Diagnostics/20./. Atlanta, Georgia, 01.06.2014-05.06.2014] R&D Projects: GA MŠk(CZ) LM2011021; GA ČR(CZ) GA14-35260S Institutional support: RVO:61389021 Keywords : plasma * tokamak * pedestal * Thomson scattering * diagnostic Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.614, year: 2014 http://scitation.aip.org/content/aip/journal/rsi/85/11/10.1063/1.4893995

Spatial analysis of the Rio de Janeiro metropolitan area and social and environmental management issues

DEFF Research Database (Denmark)

Ribeiro, Gustavo

2005-01-01

and infrastructural data. Through these three levels of spatial analysis it is possible to develop and to support a more comprehensible study of urban development of the Rio de Janeiro Metropolitan Area. The aim of this study is (a) to develop an alternative spatial analysis leading to a more comprehensive...... understanding of the urban development process and its correlation not just with political-administrative borders but also to ecological systems: (b) to identify the correlations between infrastructure and socio-economical data in the Rio de Janeiro Metropolitan Area (c) to evaluate urban development dynamics...... in the period between 1990 and 2000, based on the application of the above-mentioned data to the three spatial levels in question. This paper highlights the role of the hydrographical systems of the Rio de Janeiro Metropolitan Area as an important spatial unit of analysis to understand the metropolitan urban...

Green Urbanism for the Greener Future of Metropolitan Areas

Science.gov (United States)

Zaręba, Anna; Krzemińska, Alicja; Widawski, Krzysztof

2016-10-01

Intensive urbanization is swallowing municipal green areas which causes intensification of erosion, decrease in biodiversity and permanent fragmentation of habitats. In the face of these changes, a risk of irreversible damages to urban ecosystems is growing. That is why planning of solutions within the framework of Green Urbanism in metropolitan areas inhabited by over 55% of the global population is of extraordinary importance. The task of the paper is to present patterns of the Green Urbanism using selected examples of metropolitan areas as case studies. The main goal of the research is to make comparison between GU practices in different countries, in various spatial settings. The principles of triple zero framework: zero fossil-fuel energy use, zero waste, zero emissions (from low-to-no-carbon emissions) introduce not only the contemporary trends in theoretical urban planning but are dictated by practical considerations to create a healthy environment for a healthy society with a minimized environmental footprint. The research results help to identify Green Urbanism techniques used for multiple functions, including ecological, recreational, cultural, aesthetic and other uses and present opportunities for implementation of Green Urbanism solutions in metropolitan areas. To achieve healthier society and environment, highly congested and polluted cities have to be recreated through working with the existing landscape, topography and natural resources particular to the site.

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

International Nuclear Information System (INIS)

Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-01-01

Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Science.gov (United States)

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Iron, Oil, and Emeryville: Resource Industrialization and Metropolitan Expansion in the San Francisco Bay Area, 1850-1900

OpenAIRE

Lunine, Seth

2013-01-01

Scholars have largely overlooked the formative role of industry in both California's economic development and the San Francisco Bay Area's metropolitan expansion during the late nineteenth century. Beginning in the early 1880s, leading firms in San Francisco's specialized industries, such as the iron and chemicals sectors, dispersed to the metropolitan periphery. This process of industrial suburbanization created an integrative metropolitan economy, as well as individual suburbs. In this di...

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre [Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France); Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe [CRHEA-CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Design and Scale Isses in the New Metropolitan City: a study of the south-east homogeneous zone

Directory of Open Access Journals (Sweden)

Elena Mussinelli

2015-11-01

Full Text Available The establishment of the new Metropolitan City and recent anti-sprawl legislations form part of a new urban regeneration initiative. In this context, the goal of the current research is to provide spatial forecasts, guidelines for governance, and economic feasibility scenarios for revitalisation work. The research is centred on the Milan Metropolitan area. In addition to exploring certain theories of regeneration and resilience, this paper reinstates the practice of spatial analysis of abandoned industrial areas at a metropolitan scale and identifies boundaries, environments, and issues for meta-design testing based on public initiatives aimed at increasing socio-economic resilience for the south-east sector of the Milanese metropolitan area. 

Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

International Nuclear Information System (INIS)

Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

2006-01-01

We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

Nanomaterial disordering in AlGaN/GaN UV LED structures

International Nuclear Information System (INIS)

Shabunina, E I; Levinshtein, M E; Kulagina, M M; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Kurin, S Yu; Makarov, Yu N; Chernyakov, A E; Usikov, A S; Helava, H

2015-01-01

Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs. (paper)

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-04-28

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

Science.gov (United States)

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

Business profile of metropolitan Las Vegas

International Nuclear Information System (INIS)

Boyle, M.R.

1988-06-01

This first report describes the present makeup of the Las Vegas metropolitan statistical area (MSA) economy and analyzes the climate for business expansion. The second report contains an assessment of the competitiveness of the area as a location for new or expanded facilities investment by companies in approximately 600 business groups. The third report projects Las Vegas' competitiveness at the start of the next century in the absence of a nuclear waste storage facility and then evaluates the potential impacts of siting that facility near Las Vegas on its ability to attract and retain business investment. The primary purpose of these reports is to contribute to the overall assessment of the environmental impact of the US Department of Energy's proposed action to build and operate an underground nuclear waste storage facility at Yucca Mountain. The first two reports also serve a second purpose -- they can be used by economic development organizations in the Las Vegas metropolitan area in their ongoing efforts to attract new business investment. Information contained in the business climate analysis found in this first report can be incorporated into marketing materials. The competitiveness assessment contained in the second report can be used by these organizations in identifying targets they wish to pursue

CLMP-Mediated Regulation of Intestinal Homeostasis in IBD

Science.gov (United States)

2014-10-01

AWARD NUMBER: W81XWH-13-1-0334 TITLE: PRINCIPAL INVESTIGATOR: Asma Nusrat CONTRACTING ORGANIZATION: Emory University Atlanta GA 30322...in IBD 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Charles A. Parkos (Initiating PI), Asma Nusrat (Partnering PI

Effects of Pelletization Pressure on the Physical and Chemical Properties of the Metal-Organic Frameworks Cu3(BTC)2 and UiO-66

Science.gov (United States)

2013-02-26

Walton Georgia Tech Research Corporation Office of Sponsored Programs 505 Tenth Street NW Atlanta, GA 30332 -0420 REPORT DOCUMENTATION PAGE b. ABSTRACT...microbreakthrough testing CuBTC has previously been shown to provide excellent ammo- nia removal capabilities [23], and therefore samples were evalu

40 CFR 63.14 - Incorporations by reference.

Science.gov (United States)

2010-07-01

... from Coal Utilization Processes by Inductively Coupled Plasma Atomic Emission Spectrometry, Inductively Coupled Plasma Mass Spectrometry, and Graphite Furnace Atomic Absorption Spectrometry, IBR approved for... Engineers at 1791 Tullie Circle, NE., Atlanta, GA 30329 or by electronic mail at [email protected]: (1...

75 FR 66796 - Pricewaterhousecoopers LLP (“PwC”), Internal Firm Services Client Account Administrators Group...

Science.gov (United States)

2010-10-29

... LLP (``PwC''), Internal Firm Services Client Account Administrators Group Atlanta, GA; Amended...''), Internal Firm Services Client Account Administrators Group. Accordingly, the Department is amending this... Firm Services Client Account Administrators Group. The amended notice applicable to TA-W-73,630 is...

Journal of Biosciences | Indian Academy of Sciences

Indian Academy of Sciences (India)

Author Affiliations. Ramkumar Sambasivan1 2 Grace K Pavlath3 Jyotsna Dhawan1. Centre for Cellular and Molecular Biology, Hyderabad 500 007, India; Department of Developmental Biology, Pasteur Institute, 75724 Cedex 15 Paris, Franc; Department of Pharmacology, Emory University, Atlanta, GA 30322, USA ...

Use of renewable energy in the greater metropolitan area

International Nuclear Information System (INIS)

Arias Garcia, Rocio; Castro Gomez, Gustavo; Fallas Cordero, Kenneth; Grant Chaves, Samuel; Mendez Parrales, Tony; Parajeles Fernandez, Ivan

2012-01-01

A study is conducted on different renewable energy within the larger metropolitan area, selecting the most suitable for the area and the implementation for distributed generation. A research methodology is practiced type pretending gather the necessary information to make proposals selected of different type of energy. The geography of the greater metropolitan area is studied along with the different existing renewable energy: distributed generation, remote measurement of energy which is one of the elements of the concept of intelligent networks (Smart Grid) in the electricity sector, legislation of Costa Rica regarding the generation of renewable energy and environmental impact. An analysis of economic feasibility is covered for each of the proposals estimating current rates for leading distributors of a future value, concluding with the viability of projects for possible execution of the same. (author) [es

The Metropolitan Area of the Municipality of Bucharest. Present-Day Features Relating to Some Environmental Issues in an International Context

Directory of Open Access Journals (Sweden)

INES GRIGORESCU

2005-01-01

Full Text Available The development of metropolitan areas represents the main characteristic of today’s urban evolution trends. The first initiatives to delimitate and define metropolitan areas have been in the United States since 1910. In Europe, this concept was adopted at the beginning of the1990s when the United States had already had 250 metropolitan areas. Romania adopted the concept of metropolitan area in the late 1990s, namely in 1997 when a study on the Directions, Ways, and Intensities of Development in the Municipality of Bucharest and its Metropolitan Zone. Environmental protection politics appeared. This made public a point of view about the Bucharest metropolitan area, which was legally defined by Law no. 351 of July 6th 2001 regarding the National Territory Management Plan, Section IV – Settlements. But many other limits of this area were also taken into account. The uncontrolled evolution of the Bucharest Metropolitan Area as well as of many other European capital cities can be stopped or stabilized by developing green belts or green areas.

Metropolitan Lima: area profile.

Science.gov (United States)

Hakkert, R

1986-11-01

This profile of metropolitan Lima, Peru, covers administrative divisions; population growth; age distribution; ethnicity and religion; housing and households; education and health care; economic activity, income, and consumption; transport and communication; and sources of information. Nearly 30% of Peru's entire population and 42% of its urban population live in Lima. The trend continues, yet Lima's urban primacy is waning due to the growth of some regional centers like Trujillo and Chimbote. Lima is still almost 10 times as large as the country's next ranking cities, Trujillo on the northern coast and Arequipa in the south. Peru's main administrative divisions are the 24 departments, of which the Department of Lima is one. These departments are further divided into 156 provinces. Greater Lima consists of 2 such provinces, the province of Lima and the constitutional province of Callao. Although the population of Lima continues to grow, its rate of growth slowed from about 5.5% during the 1960s to about 3.9% in the 1970s. Current projections estimate a metropolitan population of 6.7 million by 1990. On the whole, Lima's age structure is somewhat older than that of the rest of Peru. The median age of the population is 22.3 years, compared to a national figure of 20.4. The proportion of persons over age 65 is only 3.6%, lower than the national average of 4.1%, due to the tendency of in-migration to concentrate people of intermediate ages in the cities. Almost 400,000 inhabitants of greater Lima are bilingual in Spanish and an indigenous language. As elsewhere in Peru, the dominant religion is Roman Catholicism. Lima is a spread out city with few high rise buildings due to the danger of earthquakes. Only 12% of Lima's households are found in apartment buildings. As in other cities of Latin America, the formal housing market is beyond the reach of a major segment of the population. Consequently, much of the urban settlement has occurred through informal self

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Science.gov (United States)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

Health impact assessment of the Atlanta BeltLine.

Science.gov (United States)

Ross, Catherine L; Leone de Nie, Karen; Dannenberg, Andrew L; Beck, Laurie F; Marcus, Michelle J; Barringer, Jason

2012-03-01

Although a health impact assessment (HIA) is a tool that can provide decision makers with recommendations to promote positive health impacts and mitigate adverse health impacts of proposed projects and policies, it is not routinely conducted on most major projects or policies. To make health a decision criterion for the Atlanta BeltLine, a multibillion-dollar transit, trails, parks, and redevelopment project. An HIA was conducted in 2005-2007 to anticipate and influence the BeltLine's effect on health determinants. Changes in access and equity, environmental quality, safety, social capital, and physical activity were forecast, and steps to maximize health benefits and reduce negative effects were recommended. Key recommendations included giving priority to the construction of trails and greenspace rather than residential and retail construction, making health an explicit goal in project priority setting, adding a public health professional to decision-making boards, increasing the connectivity between the BeltLine and civic spaces, and ensuring that affordable housing is built. BeltLine project decision makers have incorporated most of the HIA recommendations into the planning process. The HIA was cited in the awarding of additional funds of $7,000,000 for brownfield clean-up and greenspace development. The project is expected to promote the health of local residents more than in the absence of the HIA. This report is one of the first HIAs to tie specific assessment findings to specific recommendations and to identifiable impacts from those recommendations. The lessons learned from this project may help others engaged in similar efforts. Copyright © 2012. Published by Elsevier Inc.

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Intestinal Parasites among Waste-Handlers in Jos Metropolitan Area ...

African Journals Online (AJOL)

Intestinal Parasites among Waste-Handlers in Jos Metropolitan Area of Plateau State, Nigeria. ... Solid waste management is associated with health hazards. ... Waste disposal workers are at high risk of infection with different species of ...

2012 HIV Diagnostics Conference: the molecular diagnostics perspective.

Science.gov (United States)

Branson, Bernard M; Pandori, Mark

2013-04-01

2012 HIV Diagnostic Conference Atlanta, GA, USA, 12-14 December 2012. This report highlights the presentations and discussions from the 2012 National HIV Diagnostic Conference held in Atlanta (GA, USA), on 12-14 December 2012. Reflecting changes in the evolving field of HIV diagnostics, the conference provided a forum for evaluating developments in molecular diagnostics and their role in HIV diagnosis. In 2010, the HIV Diagnostics Conference concluded with the proposal of a new diagnostic algorithm which included nucleic acid testing to resolve discordant screening and supplemental antibody test results. The 2012 meeting, picking up where the 2010 meeting left off, focused on scientific presentations that assessed this new algorithm and the role played by RNA testing and new developments in molecular diagnostics, including detection of total and integrated HIV-1 DNA, detection and quantification of HIV-2 RNA, and rapid formats for detection of HIV-1 RNA.

Agricultural land cover changes in metropolitan areas of Poland for the period 1990–2012

Directory of Open Access Journals (Sweden)

Nalej Marta

2016-06-01

Full Text Available Agricultural land covers more than half the area of metropolitan areas in Poland, and is therefore particularly prone to the influences of the processes associated with their development. The aim of the study was to analyse changes in agricultural land cover within the metropolitan areas of Poland for the years 1990–2012; and to capture their dynamics, types and directions. The percentage share of the total study area, for each of the forms of agricultural land cover and their changes were traced, with the spatial distribution of the changes also being determined. The results of the study show that in metropolitan areas, agricultural land cover is undergoing transformations that do not result in the loss of agricultural lands, or that involve a decrease in surface area due to their change into anthropogenic forms of land cover. The greatest transitions occurred between 2000 and 2006 and were observed in the outer zones of metropolitan areas.

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

International Nuclear Information System (INIS)

Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

2000-01-01

We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

The 1970 Clean Air Act and termination of rainfall suppression in a U.S. urban area

Science.gov (United States)

Diem, Jeremy E.

2013-08-01

The purpose of this paper is to determine the impact of reduced atmospheric particulate resulting from the Clean Air Act of 1970 on changes in summer rainfall in the Atlanta, Georgia USA region. In order to determine if rainfall at nine candidate stations in the metropolitan area was influenced by changes in particulate concentrations within the 1948-2009 period, predicted rainfall characteristics were derived from rainfall frequencies at nine reference stations located more than 80 km from downtown Atlanta. Both parametric and non-parametric tests were used to test for significant differences between observed values and predicted values within 34 overlapping 30-year periods. For the country as a whole, emissions of PM10 (i.e. particulates with a diameter less than or equal to 10 μm) decreased by approximately 40% from 1970 to 1975. The reduction in emissions caused a rapid rebound in summer rainfall in the Atlanta region. There was suppression of rainfall over and downwind of the Atlanta urbanized area during 30-yr periods that comprise all or portions of the decades of the 1950s, 1960s, and 1970s. This suppression occurred even while urban-related factors that promote rainfall enhancement were present. During the 1948-1977 suppression period, there was a decrease in rainfall of at least 40 mm at affected locales, which is substantial given that the mean seasonal rainfall was approximately 300 mm. The rainfall suppression involved a decrease of heavy-rainfall days. Atlanta is most likely not a unique case; therefore, particulate-induced rainfall suppression might have occurred over and downwind of other U.S. urban areas prior to the late 1970s.

The Tshwane metropolitan municipality and strategic partnerships in ...

African Journals Online (AJOL)

... Tshwane Metropolitan Municipality commissioned research to investigate the potential of strategic partnerships for the optimal facilitation and co-operative governance of sport and recreation. The aim of this project was to identify the possible structure and nature of partnerships in order to facilitate effective management, ...

Gold free contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, Marcin

2018-01-01

Transistors and diodes based on AlGaN/GaN are suitable candidates for high-voltage and high-speed electronics due to the GaN material properties such as wide bandgap, large breakdown field, high electron saturation velocity and good thermal conductivity. When thin AlGaN layer is grown epitaxially on

Clinical evaluation of 67Ga gut accumulation in 67Ga scintigraphy

International Nuclear Information System (INIS)

Kobayashi, Hidetoshi; Ohno, Akiko; Watanabe, Youichi; Ishigaki, Takeo.

1994-01-01

Accumulation of 67 Ga in gut was evaluated in 67 Ga scintigraphy retrospectively in 30 patients (32 examinations). TIBC and UIBC were examined in all patients on the day when their scintigraphies were performed. Blood transfusion or Fe administration 2 months before 67 Ga scintigraphies were not carried out in any patient. Fifty percents (6/12) of male, and 40% (8/20) of female patients showed 67 Ga accumulation in gut. There was significant correlation between 67 Ga accumulation in gut and low ion-saturation ratio for transferrin. Excretion of 67 Ga bound with transferrin from liver was thought to be an important factor of 67 ga accumulation in gut. (author)

Characterization of GaN/AlGaN epitaxial layers grown

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

Study of GaN nanorods converted from β-Ga2O3

Science.gov (United States)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

2013-01-01

Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

Investigation of the GaN-on-GaAs interface for vertical power device applications

International Nuclear Information System (INIS)

Möreke, Janina; Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

2014-01-01

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Investigation of the GaN-on-GaAs interface for vertical power device applications

Energy Technology Data Exchange (ETDEWEB)

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

International Nuclear Information System (INIS)

Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

2014-01-01

Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

77 FR 13352 - Notice of Determinations Regarding Eligibility To Apply for Worker Adjustment Assistance

Science.gov (United States)

2012-03-06

.... Services Group, Inc., Corporate/Finance/ Controllers. 81,213 American Express Travel Phoenix, AZ February.... Corporate Resources, Aerotek, Dysis and Tek. 81,254 BT North America, Network Atlanta, GA February 13, 2010... February 7, 2011. Services Group, Inc., Corporate/EIT/Consumer. The following certifications have been...

76 FR 9015 - Ocean Transportation Intermediary License Applicants

Science.gov (United States)

2011-02-16

... Global Logistics, LLC (NVO & OFF), 53 Perimeter Center East, Suite 450, Atlanta, GA 30346. Officer: Chad... Street, Doral, FL 33126. Officers: Juan P. Constain, General Manager (Qualifying Individual), Santiago...). Application Type: Add NVO Service. CoscoEx (CGL), Inc. dba Citic Global Logistics dba Chimerica Global...

75 FR 42363 - Public Health Security and Bioterrorism Preparedness and Response Act of 2002; Biennial Review...

Science.gov (United States)

2010-07-21

... be e-mailed to: [email protected] . FOR FURTHER INFORMATION CONTACT: Robbin Weyant, Director..., Atlanta, GA 30333. Telephone: (404) 718- 2000. SUPPLEMENTARY INFORMATION: The Bioterrorism Act requires... to the Select Agent regulations (42 CFR Part 73) to implement a tiering and/or stratification schema...

Workplace Safety and Health Topics: Diseases and Injuries

Science.gov (United States)

... December 28, 2017 Content source: National Institute for Occupational Safety and Health Education and Information Division Email Recommend Tweet YouTube Instagram Listen Watch RSS ABOUT About CDC Jobs Funding LEGAL Policies Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 ...

Flavorings-Related Lung Disease

Science.gov (United States)

... January 29, 2018 Content source: National Institute for Occupational Safety and Health Respiratory Health Division Email Recommend Tweet YouTube Instagram Listen Watch RSS ABOUT About CDC Jobs Funding LEGAL Policies Privacy FOIA No Fear Act OIG 1600 Clifton Road Atlanta , GA 30329-4027 ...

76 FR 33781 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Science.gov (United States)

2011-06-09

... light- emitting diodes and products containing same. The complaint names as respondents Samsung Electronics Co., Ltd of Korea; Samsung Electronics America, Inc. of Ridgefield Park, NJ; Samsung LED Co., Ltd. of Korea and Samsung LED America, Inc. of Atlanta, GA. The complainant, proposed respondents, other...

75 FR 62763 - Application(s) for Duty-Free Entry of Scientific Instruments

Science.gov (United States)

2010-10-13

... Technology, 771 Ferst Drive, NW., School of Materials Science and Engineering, Atlanta, GA 30332-0245... components of the instrument are necessary to elicit information from core-shell nanoparticles. Justification... enhanced by extending the resolution using phase-plate technology with this instrument. The instrument is...

Rate of injury and subjective benefits of gravitational wellness weightlifting

OpenAIRE

Burke, David T; Bell, Regina; Al-Adawi, Samir; Alexandroni, Ariel; Dorvlo, Atsu; Burke, Daniel P

2014-01-01

David T Burke,1 Regina Bell,1 Samir Al-Adawi,2 Ariel Alexandroni,1 Atsu Dorvlo,3 Daniel P Burke4 1Emory University School of Medicine, Atlanta, Emory University, GA, USA; 2Department of Behavioral Medicine, College of Medicine and Health Sciences, 3Department of Mathematics and Statistics, College of Science, Sultan Qaboos University, Muscat, Oman; 4Georgia College and State University, Milledgeville, GA, USA Background: A preliminary study using the "gravitational wellness"...

Surface-Water Quality-Assurance Plan for the USGS Georgia Water Science Center

Science.gov (United States)

2005-01-01

data-collection activi- ties through offices in Atlanta, Albany, Savannah, and Tifton . A Field Office Chief Technician, under the supervision of the...Roswell, GA (02335450) on May 19, 2004, will have the file- name 040519_02335450_555.txt and will be placed in the /sw/edldata/02335450/555/WY2004...letters of the stream and the first three letters of the nearest location. EXAMPLE: The transect prefix for Chattahoochee River near Norcross, GA

Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

International Nuclear Information System (INIS)

Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.

2010-01-01

The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

Minority Stress and Intimate Partner Violence Among Gay and Bisexual Men in Atlanta.

Science.gov (United States)

Stephenson, Rob; Finneran, Catherine

2017-07-01

Intimate partner violence (IPV) rates are disproportionately high among sexual minority populations. Few studies have examined the plausible relationship between minority stress and IPV among men who have sex with men. This study examines the associations between IPV and three indicators of minority stress: internalized homophobia, sexuality-based discrimination, and racism, in a large venue-based sample of gay and bisexual men from Atlanta, USA. Each of the minority stress measures was found to be significantly associated with increased odds of self-reporting any form of receipt of IPV. Significant associations were also identified between perpetration of IPV and minority stressors, with most types of IPV perpetration linked to internalized homophobia. This study confirms findings in a growing body of research supporting the relationship between minority stress and increased prevalence of IPV among men who have sex with men, and points to the need to address structural factors in IPV prevention programs for male-male couples.

Ga and Pt NMR study of UPtGa sub 5 and UNiGa sub 5

CERN Document Server

Kato, H; Tokunaga, Y; Tokiwa, Y; Ikeda, S; Onuki, Y; Kambe, S; Walstedt, R E

2003-01-01

Ga and Pt NMR measurements have been carried out for two isomorphs compounds, UPtGa sub 5 and UNiGa sub 5 , which exhibit different magnetic structures below T sub N. Knight shift K measurements in the paramagnetic region are reported here. The transferred hyperfine coupling constants at Ga and Pt sites are determined. The temperature independent part K sub 0 of K, which probes the conduction electron polarization at the ligand site, has been successfully evaluated. A nearly identical conduction electron structure in the paramagnetic region is suggested for these two compounds. The origin of the different magnetic structures is discussed.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

Science.gov (United States)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Durability testing of the high-capacity GA-4/GA-9 trailer

International Nuclear Information System (INIS)

Zimmer, A.; Lyon, T.

1995-01-01

GA designed trailers to transport the GA-4 and GA-9 LWT from-reactor spent nuclear fuel shipping casks. GA designed and fabricated the GA-9 trailer to ANSI N14.30 requirements and is now performing a durability test at the AlliedSignal Automotive Proving Grounds. The trailer, simulated cask and tractor. The test program objective is to evaluate and improve, as necessary, the trailer's durability, reliability and performance

Study on waste waters of metal finishing industries around Lahore metropolitan area

International Nuclear Information System (INIS)

Khan, Izhar-ul-Haq; Mahmood, F.; Tufail, S.; Naeem, M.

2002-01-01

Study was undertaken on the waste water samples from metal finishing industries of Lahore metropolitan area for the evaluation of metallic impurities. The metal finishing industry was classified into three categories i. e. medium scale, small scale and cottage scale industry. About 93 wastewater samples were collected from various metal finishing industries around Lahore metropolitan area. In addition to toxic elements like cadmium, nickel and zinc the other parameters such as hydrogen ion concentration (pH), Electrical conductivity (EC) and Total Dissolved Salts (TDS) were also determined. (author)

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Growth and characterization of Ga(As,N) and (In,Ga)(As,N)

International Nuclear Information System (INIS)

Mussler, G.

2005-01-01

This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

2016-01-01

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

Shifting balances in U.S. metropolitan and nonmetropolitan area growth.

Science.gov (United States)

Garnick, D H

1984-12-01

"This paper assesses some of the recent attempts to explain the perceived growth reversal between metropolitan and nonmetropolitan areas in the United States during the 1970s. The paper argues that the reversal in population trends was not a one-time, radical shift in settlement trends, but rather the result of more continuous underlying industrial trends. Indeed, since 1979, population growth has again become faster in metropolitan than nonmetropolitan areas." The paper includes three sections. Regional and area population and industrial earnings growth patterns are first summarized for the 1960s, 1970s, and 1980s. Theories of polarization and polar reversal are then evaluated and found to be inadequate. Finally, a reconstruction of the neoclassical model is proposed. excerpt

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Energy Technology Data Exchange (ETDEWEB)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.; Vennéguès, P. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Ngo, H. T.; Rosales, D.; Gil, B. [Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France); Hussain, S. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2 (France)

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Directory of Open Access Journals (Sweden)

Chee-Keong Tan

2015-01-01

Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

The Role of Great Cities in Romania for the Metropolitan Development

Directory of Open Access Journals (Sweden)

Ruxandra Irina POPESCU

2008-02-01

Full Text Available According to the legislation in force, in Romania there are 11 first rank cities that given their size, their importance, the level of services and the economic activity, represent attractions and are subjected to the development pressures. Still, according to the European tendencies, the urban agglomerations tend to approach this type of cooperation regardless the number of the inhabitants. Currently in Romania there are 11 great cities that have developed processes of organizing the metropolitan areas corresponding to them. Among them, two have already created metropolitan areas: Oradea (2001 and Iaşi (2004, both with the assistance of programs financed by USAID.

Intra-metropolitan inequalities in Rio de Janeiro and the Guanabara Bay cleaning programme

DEFF Research Database (Denmark)

Ribeiro, Gustavo; Silva, Victor

2005-01-01

This paper investigates the impacts of the Guanabara Bay Cleaning Programme (GBCP) on the Rio de Janeiro urban development process. Based on the magnitude of the budget of the programme (HOW MUCH?) and its relevance to the improvement of the life quality of urban dwellers, the main discussion...... of this paper focuses on the role of GBCP in the context of the Rio de Janeiro urban trends and intra-metropolitan inequality dynamics. In studying the impact of the GBCP, we present: (a) a description of the GBCP intervention process and its goals, (b) a spatial analysis of the Rio de Janeiro Metropolitan Area...... the role of the GBCP implementation in the spatial distribution of these patterns throughout these 10 years. The conclusion builds on an analysis of the GBCP role in the current urban development process of the Rio de Janeiro Metropolitan Area, identifying its influences on the dynamics of intra...

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

Directory of Open Access Journals (Sweden)

Derang Cao

2017-11-01

Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

Self-reported oral health of a metropolitan homeless population in Australia: comparisons with population-level data.

Science.gov (United States)

Parker, E J; Jamieson, L M; Steffens, M A; Cathro, P; Logan, R M

2011-09-01

There is limited information on self-perceived oral health of homeless populations. This study quantified self-reported oral health among a metropolitan homeless adult population and compared against a representative sample of the metropolitan adult population obtained from the National Survey of Adult Oral Health. A total of 248 homeless participants (age range 17-78 years, 79% male) completed a self-report questionnaire. Data for an age-matched, representative sample of metropolitan-dwelling adults were obtained from Australia's second National Survey of Adult Oral Health. Percentage responses and 95% confidence intervals were calculated, with non-overlapping 95% confidence intervals used to identify statistically significant differences between the two groups. Homeless adults reported poorer oral health than their age-matched general population counterparts. Twice as many homeless adults reported visiting a dentist more than a year ago and that their usual reason for dental attendance was for a dental problem. The proportion of homeless adults with a perceived need for fillings or extractions was also twice that of their age-matched general population counterparts. Three times as many homeless adults rated their oral health as 'fair' or 'poor'. A significantly greater proportion of homeless adults in an Australian metropolitan location reported poorer oral health compared with the general metropolitan adult population. © 2011 Australian Dental Association.

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

Science.gov (United States)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

InGaN/GaN quantum well improved by in situ SiN{sub x} pretreatment of GaN template

Energy Technology Data Exchange (ETDEWEB)

Huang, Demeng; Wu, Zhengyuan; Fang, Zhilai [Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University (China)

2016-12-15

In situ SiN{sub x} pretreatment was employed to modify the growth behavior and optical properties of InGaN/GaN quantum wells (QWs). With moderate SiN{sub x} pretreatment surface smoothness of InGaN/GaN QWs was improved and attributed to enhanced layer growth by Ga surfactant effect. Significant increase of photoluminescence peak intensity and relatively uniform and bright cathodoluminescence images were observed, which were attributed to the improvement in crystalline quality and strain reduction for the InGaN/GaN QWs with moderate SiN{sub x} pretreatment. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaphios of Jovan, the Metropolitan of Skopje, in the treasury of the Hilandar monastery

Directory of Open Access Journals (Sweden)

Radovanović Janko

2006-01-01

Full Text Available The epitaphios of Jovan, the Metropolitan of Skopje, was created between 1346 and 1348. It is unique for its beauty and iconographic program and, at the same time, it is the oldest of the epitaphia preserved in our country. The epitaphios was worn in the course of Holy Liturgy, during the Great Entrance in the cathedral churches and the major monasteries. Metropolitan Jovan presented the epitaphios as a gift to Christ 'my life-giver.' Depicted on its central field is the Epitaphios Threnos (Lamentation at the Tomb. Added around it, at a later time it seems, are bands representing the fourteen scenes of Great Feasts and the officiating Church Fathers, in embroidery. Holy Liturgy is served by the greatest fathers and teachers of the Church and Metropolitan Jovan.

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

Energy Technology Data Exchange (ETDEWEB)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

Statewide and Metropolitan Transportation Planning Processes : a TPCB Peer Exchange

Science.gov (United States)

2016-04-20

This report highlights key recommendations and noteworthy practices identified at Statewide and Metropolitan Transportation Planning Processes Peer Exchange held on September 9-10, 2015 in Shepherdstown, West Virginia. This event was sponsored ...

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

International Nuclear Information System (INIS)

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

2012-01-01

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

International Nuclear Information System (INIS)

Kong, X.; Trampert, A.; Guo, X.X.; Kolovos-Vellianitis, D.; Daeweritz, L.; Ploog, K.H.

2005-01-01

We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As 4 /Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [110] direction. Along the [110] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail

Is There a Global Role for Metropolitan City Libraries?

Science.gov (United States)

Mason, Marilyn Gell

1994-01-01

Discusses the potential for linking large metropolitan public libraries to international interlibrary loan networks. Issues involved in international networking, including funding, standards, network connectivity, and protectionism, are discussed. Examples of libraries capable of participating and brief descriptions of their collections are given.…

Diffuse scattering from the liquid-vapor interfaces of dilute Bi:Ga, Tl:Ga, and Pb:Ga alloys

International Nuclear Information System (INIS)

Li Dongxu; Jiang Xu; Rice, Stuart A.; Lin Binhua; Meron, Mati

2005-01-01

As part of a study of the in-plane wave-vector (q xy ) dependence of the effective Hamiltonian for the liquid-vapor interface, H(q), the wave-vector dependences of diffuse x-ray scattering from the liquid-vapor interfaces of dilute alloys of Bi in Ga, Tl in Ga, and Pb in Ga have been measured. In these dilute alloys the solute component segregates as a monolayer that forms the outermost stratum of the liquid-vapor interfaces, and the density distribution along the normal to the interface is stratified. Over the temperature ranges that the alloy interfaces were studied, the Tl and Pb monolayers exhibit both crystalline and liquid phases while the Bi monolayer is always liquid. The diffuse scattering from the liquid-vapor interfaces of these alloys displays interesting differences with that from the liquid-vapor interface of pure Ga. The presence of a segregated monolayer of solute in the liquid-vapor interface of the alloy appears to slightly suppress the fluctuations in an intermediate wave-vector range in a fashion that preserves the validity of the macroscopic capillary wave model to smaller wavelengths than in pure liquid Ga, and there is an increase in diffuse scattering when the Tl and Pb monolayers melt. The surface intrinsic roughness from fitting the wave-vector dependence of surface tension is 5.0 pm for the Tl:Ga alloy and 1.4 pm for the Bi:Ga alloy. Also, a mode of excitation that contributes to diffuse scattering from the liquid-vapor interface of Pb in Ga, but does not contribute to diffuse scattering from the liquid-vapor interface of Ga, has been identified. It is proposed that this mode corresponds to the separation of the Pb and Ga layers in the regime 1 nm -1 ≤q xy ≤10 nm -1

76 FR 14942 - Procurement List; Additions and Deletions

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2011-03-18

... DFAC. Service Type/Location: Laundry & Dry Cleaning Service, F.E. Warren, AFB, WY. NPA: Goodwill... Service Type/Location: Laundry Service, Atlanta VA Medical Center, Decatur, GA. NPA: GINFL Services, Inc...: Additions to and deletions from the Procurement List. SUMMARY: This action adds services to the Procurement...

76 FR 29006 - In the Matter of Certain Motion-Sensitive Sound Effects Devices and Image Display Devices and...

Science.gov (United States)

2011-05-19

... 98052. Nyko Technologies, Inc., 1990 Westwood Blvd., 3rd Floor, Los Angeles, CA 90025. Sony Ericsson Mobile Communications (USA), Inc., 3333 Piedmont Road, Suite 600, Atlanta, GA 30305. Sony Ericsson Mobile Communications AB, Nya Vattentornet SE-221, 88 Lund, Sweden. Vivitek Corporation, 4425 Cushing Parkway, San Jose...

78 FR 66361 - Proposed Data Collections Submitted for Public Comment and Recommendations

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2013-11-05

... CDC/ATSDR LeRoy Richardson, 1600 Clifton Road, MS D- 74, Atlanta, GA 30333 or send an email to [email protected] Heart Attack and Stroke; Lactation Support; Community Resources; Occupational Health and Safety; and... education staff, occupational nurses, medical directors, wellness directors, or others responsible for...

42 CFR 34.3 - Scope of examinations.

Science.gov (United States)

2010-10-01

... status of an applicable determination of public health emergency of international concern declared by the... immigrant visas; (ii) Students, exchange visitors, and other applicants for non-immigrant visas required by... Director, Division of Global Migration and Quarantine, Mailstop E03, HHS/CDC, Atlanta GA 30333. [73 FR...

Untitled

Indian Academy of Sciences (India)

frames, Presented at the American Helicopter Society National Specialist's Meeting on. Crashworthy Design of Rotorcraft, Atlanta, GA. Bostic SW, Fulton R E 1987 Experiences with the ... Orlando, FL, AIAA paper No. 85-0771-CP. Shuart M J 1985 Short-wavelength buckling and shear failures for compression-loaded.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Comparative Analysis of User-Generated Online Yelp Reviews for Periodontal Practices in Multiple Metropolitan Markets.

Science.gov (United States)

Holtzclaw, Dan J

2017-02-01

Previously published research for a single metropolitan market (Austin, Texas) found that periodontists fare poorly on the Yelp website for nearly all measured metrics, including average star ratings, number of reviews, review removal rate, and evaluations by "elite" Yelp users. The purpose of the current study is to confirm or refute these findings by expanding datasets to additional metropolitan markets of various sizes and geographic locations. A total of 6,559 Yelp reviews were examined for general dentists, endodontists, pediatric dentists, oral surgeons, orthodontists, and periodontists in small (Austin, Texas), medium (Seattle, Washington), and large (New York City, New York) metropolitan markets. Numerous review characteristics were evaluated, including: 1) total number of reviews; 2) average star rating; 3) review filtering rate; and 4) number of reviews by Yelp members with elite status. Results were compared in multiple ways to determine whether statistically significant differences existed. In all metropolitan markets, periodontists were outperformed by all other dental specialties for all measured Yelp metrics in this study. Intermetropolitan comparisons of periodontal practices showed no statistically significant differences. Periodontists were outperformed consistently by all other dental specialties in every measured metric on the Yelp website. These results were consistent and repeated in all three metropolitan markets evaluated in this study. Poor performance of periodontists on Yelp may be related to the age profile of patients in the typical periodontal practice. This may result in inadvertently biased filtering of periodontal reviews and subsequently poor performance in multiple other categories.

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

International Nuclear Information System (INIS)

Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

2014-01-01

The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

Gas sensing with AlGaN/GaN 2DEG channels

NARCIS (Netherlands)

Offermans, P.; Vitushinsky, R.; Crego-Calama, M.; Brongersma, S.H.

2011-01-01

AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the

Knowledge Worker Perceptions of Telework Policy in the New York Metropolitan Area: A Qualitative Descriptive Study

Science.gov (United States)

Slaughter, Sandra Lorraine Hawks

2013-01-01

This qualitative descriptive case study, "Knowledge Worker Perceptions of Telework in the New York Metropolitan Area," was conducted to explore the perceptions of knowledge workers who commute to a physical workplace in the New York Metropolitan area (NYMA). In-depth interviews were conducted with fourteen NYMA commuters who are…

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

2007-04-23

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

International Nuclear Information System (INIS)

Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

2007-01-01

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

Gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga. Magnetic and solid state NMR-spectroscopic characterization

Energy Technology Data Exchange (ETDEWEB)

Heletta, Lukas; Seidel, Stefan; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Benndorf, Christopher [Leipzig Univ. (Germany). Inst. fuer Mineralogie, Kristallographie und Materialwissenschaften; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics

2017-10-01

The gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga have been synthesized by arc-melting of the elements followed by different annealing sequences to improve phase purity. The samples have been studied by powder X-ray diffraction. The structures of Lu{sub 0.97}Rh{sub 2}Ga{sub 1.03} (Fm3m, a=632.94(5) pm, wR2=0.0590, 46 F{sup 2} values, seven variables) and Sc{sub 0.88}Rh{sub 2}Ga{sub 1.12} (a=618.91(4) pm, wR2=0.0284, 44 F{sup 2} values, six variables) have been refined from single crystal X-ray diffractometer data. Both gallides show structural disorder through Lu/Ga and Sc/Ga mixing. Temperature dependent magnetic susceptibility measurements showed Pauli paramagnetism for ScRh{sub 2}Ga, ScPd{sub 2}Ga, and LuRh{sub 2}Ga and Curie-Weiss paramagnetism for TmRh{sub 2}Ga. {sup 45}Sc and {sup 71}Ga solid state MAS NMR spectroscopic investigations of the Sc containing compounds confirmed the site mixing effects typically observed for Heusler phases. The data indicate that the effect of mixed Sc/Ga occupancy is significantly stronger in ScRh{sub 2}Ga than in ScPd{sub 2}Ga.

Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2003-11-01

A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

The metropolitan area as a knee-jerk response to the multilevel governance and its derived national public decisions

Directory of Open Access Journals (Sweden)

Cătălin Daniel DUMITRICĂ

2013-06-01

Full Text Available The paper objectifies the first part of a larger projects aiming at establishing a public decision-making map pertaining to the negative externalities in the framework of the economic approach of subsidiarity in the multilevel governance (the case of Romania. The first part of the larger research project refers to testing whether the economic theory of the European Union multilevel governance, with its core consisting in the subsidiarity principle, puts more pressure on the national public decisions (more specifically those related to specific market failures, though it interferes with all state’s functions and their specific decisions.Our research thesis begins by establishing whether the relationship between the local political elites and public governance at the level of towns and communes is considered a very straight forward, even obvious relationship. The political parties, by means of the publicly and democratically-elected officials (mayors and local council-members, make the most important decisions concerning public affairs (i.e. pertaining to a market failure examined by a second stage of the project.In an attempt to modernize the Romanian administrative system, to make public administration more dynamic, flexible and pro-active, the local political leaders decided the development of a new type of structure, the metropolitan area. The metropolitan areas, due to the constraints of the law, were established as associative organizations, composed of several administrative-territorial units.The paper at hand presents the establishment of the metropolitan areas in Romania as a political decision to associate towns and communes, in view of gaining access to better-performance instruments for local economic development. The emergence of the metropolitan areas in our country is strongly connected with the local political elites, the local political actors representing, in fact, the engine of the metropolitan structures and regional

Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

Science.gov (United States)

Majumdar, Shubhankar; Das, S.; Biswas, D.

2015-08-01

Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

International Nuclear Information System (INIS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-01-01

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

Energy Technology Data Exchange (ETDEWEB)

Gao, Qingxue [School of Physics, Shandong University, Jinan, 250100 (China); Liu, Rong [Department of Fundamental Theories, Shandong Institute of Physical Education and Sports, Jinan 250063 (China); Xiao, Hongdi, E-mail: hdxiao@sdu.edu.cn [School of Physics, Shandong University, Jinan, 250100 (China); Cao, Dezhong; Liu, Jianqiang; Ma, Jin [School of Physics, Shandong University, Jinan, 250100 (China)

2016-11-30

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

International Nuclear Information System (INIS)

Pérez-Tomás, A.; Fontserè, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

2013-01-01

The vertical bulk (drain-bulk) current (I db ) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I db (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E a ), the (soft or destructive) vertical breakdown voltage (V B ), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E a = 0.35 eV at T = 25–300 °C; V B = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E a = 2.5 eV at T > 265 °C; V B > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E a = 0.35 eV at T > 150 °C; V B = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

Science.gov (United States)

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

78 FR 65877 - Approval and Promulgation of Implementation Plans; Atlanta, Georgia 1997 8-Hour Ozone...

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2013-11-04

... mobile emissions), and Georgia projected the majority of its reductions to be from on-road and non-road mobile emissions. Notwithstanding the relatively small contribution of the Rule (jjj) emission reductions... 6/17/96 4/26/99. and HOV Marketing Program. Metropolitan Area. HOV lanes on I-75 and I-85...

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

78 FR 77713 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

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2013-12-24

... Telecommunications America, L.L.C. of Richardson, TX; Sony Corporation of Japan; Sony Mobile Communications AB of Sweden; Sony Mobile Communications (USA), Inc. of Atlanta, GA; ZTE Corporation of China and ZTE (USA) Inc... respondents Nokia Corporation (Nokia Oyj) of Finland; Nokia, Inc. of Sunnyvale, CA; Samsung Electronics Co...

Poisonous Plants

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Encourage Your Workers to Report Bloodborne Pathogen Exposures

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Venomous Spiders

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Tick-Borne Diseases

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Workplace Safety and Health Topics: Safety & Prevention

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Protecting Yourself from Poisonous Plants

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Occupational Exposure to Carbon Nanotubes and Nanofibers

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Latex Allergy: A Prevention Guide

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Respirator Fact Sheet

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Proceedings – Mathematical Sciences | Indian Academy of Sciences

Indian Academy of Sciences (India)

Department of Mathematics, The University of Texas – Pan American, 1201 West University Drive, Edinburg, TX 78539, USA; School of Mathematics, Georgia Institute of Technology, Atlanta, GA 30332-0160, USA; Departamento de Matemáticas, Universidad de Antioquia, Calle 67 N◦53-108, Medellín, Colombia, USA ...

Extraction and Analysis of V-Type Agents (VX, RVX, CVX, and VM) from Various Food Matrices by Ultra-Performance Liquid Chromatography-Time-Of-Flight Mass Spectrometry

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2015-12-01

and 2% Reduced Fat Milk Juicy Juice apple juice (Nestlé USA; Glendale, CA), Minute Maid orange juice ( Coca Cola Company; Atlanta, GA), and Food...This report may not be cited for purposes of advertisement . This report has been approved for public release. iv Blank v CONTENTS 1

The clinical feature of HIV/AIDS at presentation at the Jos University ...

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Each qualified patient had a comprehensive history taken with emphasis on the clinical symptoms and detailed physical examination performed by the researchers. The data collected were analyzed using a multipurpose computer programme, Epi-info 2000 version 1.1.3 (Atlanta GA, USA). Results: There were 86(43.0%) ...

75 FR 47808 - Alabama Municipal Electric Authority; Notice of Competing Preliminary Permit Application Accepted...

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2010-08-09

... the jurisdiction of the U.S. Army Corps of Engineers, Mobile District. The sole purpose of a....H. Guernsey and Company, 1100 Circle 75 Parkway, Suite 1530, Atlanta, GA 30339, phone: (770) 857..., 888 First Street, NE., Washington, DC 20426. More information about this project, including a copy of...

Illicit Drug Use, Illicit Drug Use Disorders, and Drug Overdose Deaths in Metropolitan and Nonmetropolitan Areas - United States.

Science.gov (United States)

Mack, Karin A; Jones, Christopher M; Ballesteros, Michael F

2017-10-20

Drug overdoses are a leading cause of injury death in the United States, resulting in approximately 52,000 deaths in 2015. Understanding differences in illicit drug use, illicit drug use disorders, and overall drug overdose deaths in metropolitan and nonmetropolitan areas is important for informing public health programs, interventions, and policies. Illicit drug use and drug use disorders during 2003-2014, and drug overdose deaths during 1999-2015. The National Survey of Drug Use and Health (NSDUH) collects information through face-to-face household interviews about the use of illicit drugs, alcohol, and tobacco among the U.S. noninstitutionalized civilian population aged ≥12 years. Respondents include residents of households and noninstitutional group quarters (e.g., shelters, rooming houses, dormitories, migratory workers' camps, and halfway houses) and civilians living on military bases. NSDUH variables include sex, age, race/ethnicity, residence (metropolitan/nonmetropolitan), annual household income, self-reported drug use, and drug use disorders. National Vital Statistics System Mortality (NVSS-M) data for U.S. residents include information from death certificates filed in the 50 states and the District of Columbia. Cases were selected with an underlying cause of death based on the ICD-10 codes for drug overdoses (X40-X44, X60-X64, X85, and Y10-Y14). NVSS-M variables include decedent characteristics (sex, age, and race/ethnicity) and information on intent (unintentional, suicide, homicide, or undetermined), location of death (medical facility, in a home, or other [including nursing homes, hospices, unknown, and other locations]) and county of residence (metropolitan/nonmetropolitan). Metropolitan/nonmetropolitan status is assigned independently in each data system. NSDUH uses a three-category system: Core Based Statistical Area (CBSA) of ≥1 million persons; CBSA of illicit drugs, the prevalence was highest for the large metropolitan areas compared with

TaC Studios New Construction Test House

Energy Technology Data Exchange (ETDEWEB)

Butler, T. [NAHB Research Center Industry Partnership, Upper Marlboro, MD (United States); Curtis, O. [NAHB Research Center Industry Partnership, Upper Marlboro, MD (United States); Kim, E. [NAHB Research Center Industry Partnership, Upper Marlboro, MD (United States); Roberts, S. [NAHB Research Center Industry Partnership, Upper Marlboro, MD (United States); Stephenson, R. [NAHB Research Center Industry Partnership, Upper Marlboro, MD (United States)

2013-03-01

As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA, in the mixed humid climate zone. This home will serve as a model home for the builder partner and addresses Building America energy savings targets through the planning and implementation of a design package will serve as a basis of design for the builder partner’s future homes. As a BA test house, this home will be evaluated to detail whole house energy use, end use loads, and HVAC and hot water efficiency.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

Science.gov (United States)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

2014-12-15

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

Directory of Open Access Journals (Sweden)

G. Naresh-Kumar

2014-12-01

Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

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Nigamananda Samal

2010-02-01

Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

Self-organized formation of GaSb/GaAs quantum rings.

Science.gov (United States)

Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

2008-12-19

Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

International Nuclear Information System (INIS)

Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

2002-01-01

In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

Is Urban Planning in Australia Hindered by Poor Metropolitan Governance?

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Paul Burton

2017-11-01

Full Text Available There are many calls for urban planning in Australia to be reformed, although often in contradictory ways. For example, some argue it should be capable of delivering greater certainty to developers while others call for more flexibility in processes of urban development regulation; some would like to roll back its regulatory impact while others argue for a renewal of planning’s commitment to promoting social and spatial justice. The Australian planning system is also held to be hindered by a comparative lack of planning at and for the metropolitan scale. This is connected to the absence of well-developed structures of metropolitan governance in what is a three-tier federal system, with most power over planning concentrated at the State and Territory government scale. The paper explores this putative hindrance by considering three important issues in Australian urban policy debates about the efficacy of contemporary multi-level governance arrangements: spatial scale; identity and legitimacy; and efficiency and effectiveness. It includes some analysis of the case made for a more explicit and rigorous national urban policy and how this might relate to lower level planning regimes. The paper focuses on recent urban policy and planning initiatives in South East Queensland, one of Australia’s fastest growing metropolitan regions, and concludes that while incremental but nonetheless significant improvements in planning policy and practice are possible, these are unlikely to satisfy those calling for more radical changes to improve the Australian planning system.

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

International Nuclear Information System (INIS)

Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

2012-01-01

The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

2017-01-01

Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

International Nuclear Information System (INIS)

Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

2011-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

Science.gov (United States)

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

The polycentric structure of local labour markets in Mexico City's Metropolitan Area

Directory of Open Access Journals (Sweden)

José María Casado Izquierdo

2012-11-01

Full Text Available Commuting data at a district level and an algorithm designed to delineate self–contained areas show that Mexico City Metropolitan Area (MCMA was organized in 2007 in twelve local labour market areas. Although six exployment subcenters were identified, the MCMA is still clearly dominated by its Central Business District (CBD, being located the remaining five subcenters close to the CBD. Assessment of this spatial structure is not a positive one: diminishing co–location, decrease in speed and increase in commuting time and distance. Nevertheless, the rising percentage of intra–district commuting is a positive sign, even if this trend is not uniform throughout the metropolitan area.

Relative Food Prices and Obesity in U.S. Metropolitan Areas: 1976-2001

Science.gov (United States)

Xu, Xin; Variyam, Jayachandran N.; Zhao, Zhenxiang; Chaloupka, Frank J.

2014-01-01

This study investigates the impact of food price on obesity, by exploring the co-occurrence of obesity growth with relative food price reduction between 1976 and 2001. Analyses control for female labor participation and metropolitan outlet densities that might affect body weight. Both the first-difference and fixed effects approaches provide consistent evidence suggesting that relative food prices have substantial impacts on obesity and such impacts were more pronounced among the low-educated. These findings imply that relative food price reductions during the time period could plausibly explain about 18% of the increase in obesity among the U.S. adults in metropolitan areas. PMID:25502888

Impact ionization of excitons in electric field of GaN and quantum wells of GaN/AlGaN

International Nuclear Information System (INIS)

Nel'son, D.K.; Yakobson, M.A.; Kagan, V.D.; Gil, B.; Grandjean, N.; Beaumont, B.; Massier, J.; Gibart, P.

2001-01-01

The effect of the exciton states impact ionization in the GaN exploit films and in the GaN/AlGaN structures with quantum wells is studied. The study was carried out through the optical method, based on the exciton photoluminescence quenching by applying the electric field. It is established that in the process of the electrons relaxation by energy and pulse the scattering on the admixtures prevails over the scattering on the acoustic phonons. The average length of the hot electrons free run is evaluated. The average length of the hot electrons free run in the GaN/AlGaN wells proved to be by the value order higher than in the GaN epitaxial films, which is conditioned by decrease in the probability of the electrons scattering in the two-dimensional case [ru

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

OpenAIRE

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

2001-01-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Science.gov (United States)

Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

2018-05-01

The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

Assessment of the Impact of Metropolitan-Scale Urban Planning Scenarios on the Moist Thermal Environment under Global Warming: A Study of the Tokyo Metropolitan Area Using Regional Climate Modeling

Directory of Open Access Journals (Sweden)

Asuka Suzuki-Parker

2015-01-01

Full Text Available Using a high-resolution regional climate model coupled with urban canopy model, the present study provides the first attempt in quantifying the impact of metropolitan-scale urban planning scenarios on moist thermal environment under global warming. Tokyo metropolitan area is selected as a test case. Three urban planning scenarios are considered: status quo, dispersed city, and compact city. Their impact on the moist thermal environment is assessed using wet-bulb globe temperature (WBGT. Future projections for the 2070s show a 2–4°C increase in daytime mean WBGT relative to the current climate. The urban scenario impacts are shown to be small, with a −0.4 to +0.4°C range. Relative changes in temperature and humidity as the result of a given urban scenario are shown to be critical in determining the sign of the WBGT changes; however, such changes are not necessarily determined by local changes in urban land surface parameters. These findings indicate that urban land surface changes may improve or worsen the local moist thermal environment and that metropolitan-scale urban planning is inefficient in mitigating heat-related health risks for mature cities like Tokyo.

Urban Landscape Characterization Using Remote Sensing Data For Input into Air Quality Modeling

Science.gov (United States)

Quattrochi, Dale A.; Estes, Maurice G., Jr.; Crosson, William; Khan, Maudood

2005-01-01

The urban landscape is inherently complex and this complexity is not adequately captured in air quality models that are used to assess whether urban areas are in attainment of EPA air quality standards, particularly for ground level ozone. This inadequacy of air quality models to sufficiently respond to the heterogeneous nature of the urban landscape can impact how well these models predict ozone pollutant levels over metropolitan areas and ultimately, whether cities exceed EPA ozone air quality standards. We are exploring the utility of high-resolution remote sensing data and urban growth projections as improved inputs to meteorological and air quality models focusing on the Atlanta, Georgia metropolitan area as a case study. The National Land Cover Dataset at 30m resolution is being used as the land use/land cover input and aggregated to the 4km scale for the MM5 mesoscale meteorological model and the Community Multiscale Air Quality (CMAQ) modeling schemes. Use of these data have been found to better characterize low density/suburban development as compared with USGS 1 km land use/land cover data that have traditionally been used in modeling. Air quality prediction for future scenarios to 2030 is being facilitated by land use projections using a spatial growth model. Land use projections were developed using the 2030 Regional Transportation Plan developed by the Atlanta Regional Commission. This allows the State Environmental Protection agency to evaluate how these transportation plans will affect future air quality.

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Influence of annealing condition and multicycle AlGaAs/GaAs structures on the Al0.26Ga0.74As surface morphology

International Nuclear Information System (INIS)

Wei, Wenzhe; Wang, Yi; Guo, Xiang; Luo, Zijiang; Zhao, Zhen; Zhou, Haiyue; Ding, Zhao

2015-01-01

Highlights: • STM study on the change of AlGaAs surface morphology with varying annealing conditions. • Interesting phenomenon that the subsequent sample has more surface roughness than the previous samples do. A physical model was proposed to explain why the multi-runs growth can increase surface roughness. • The annealing conditions of AlGaAs/GaAs surface were proposed. - Abstract: The influence of annealing temperature, As 4 beam equivalent pressure and multi-runs growth on AlGaAs/GaAs structures was investigated. The real space ultrahigh vacuum scanning tunneling microscopy images showed that AlGaAs/GaAs surface morphology greatly depends on annealing conditions and initial state of surface. The reasons of the surface phenomenon are proposed, and a physical model was proposed to explain why the multi-runs growth structures can increase AlGaAs surface roughness. The reasonable preparation conditions for AlGaAs/GaAs structures were proposed

The New England Drought Study: Water Resources Planning Metropolitan Boston, Massachusetts

National Research Council Canada - National Science Library

Joyce, Charles

1994-01-01

.... The drought of the 1960s precipitated a debate between the operators of the metropolitan Boston water system and interested citizens and citizens' groups, who were opposed to a structural solution...

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Directory of Open Access Journals (Sweden)

Yanli Liu

2018-01-01

Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

Disparities in Salaries: Metropolitan versus Nonmetropolitan Community College Faculty

Science.gov (United States)

Glover, Louis C.; Simpson, Lynn A.; Waller, Lee Rusty

2009-01-01

This article explores disparities in faculty salaries between metropolitan and nonmetropolitan Texas community colleges. The analysis reveals a significant difference in faculty salaries for the 2000 and 2005 academic years respectively. The study found no significant difference in the rate of change in faculty salaries from 2000 to 2005.…

Ceruloplasmin

Science.gov (United States)

... Overactive thyroid Pregnancy Rheumatoid arthritis Use of birth control pills Risks Veins and arteries vary in size from one ... RA, Pincus MR, eds. Henry's Clinical Diagnosis and Management by Laboratory Methods . 23rd ed. St ... MD, MPH, ABIM Board Certified in Internal Medicine and Hospice and Palliative Medicine, Atlanta, GA. ...

76 FR 41719 - National Oil and Hazardous Substances Pollution Contingency Plan; National Priorities List...

Science.gov (United States)

2011-07-15

....regulations.gov or in hard copy at:U.S. EPA Record Center, 61 Forsyth Street, SW, Atlanta, GA 30303, Hours: 8..., chromium, 1,4-dichlorobenzene, trans-1,2- dichloroethylene, ethyl benzene, lead, naphthalene, and vinyl... attenuation mechanisms; (2) ensure that benzene and vinyl chloride concentrations continue to be below cleanup...

77 FR 46122 - Notice of Determinations Regarding Eligibility To Apply for Worker Adjustment Assistance

Science.gov (United States)

2012-08-02

...)(1) with respect to the affirmative determination described in paragraph (1)(A) is published in the... subparagraph (1) is published in the Federal Register; and (3) The workers have become totally or partially... Atlanta, GA June 14, 2011. Production Control Branch and ICT Desktop Support Branch. 81,729C Crawford and...

75 FR 22554 - Notice of Petitions by Firms for Determination of Eligibility To Apply for Trade Adjustment...

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2010-04-29

... Specialty truck cabs, Joplin, MO 68801. hoods, etc.; construction and military cabs, hoods, etc.; Water... Company, Inc 1209 Logan Circle NW., 4/13/2010 The firm produces custom Atlanta, GA 30318. wood counter, table, and vanity tops. Primary material is wood. KMS Fab, LLC 100 Parry Street, Luzerne, 4/14/2010...

10 CFR 431.75 - Materials incorporated by reference.

Science.gov (United States)

2010-01-01

... to: http://www.archives.gov/federal_register/code_of_federal_regulations/ibr_locations.html. (ii) U.S...-Conditioning Engineers, Inc., 1971 Tullie Circle, NE., Atlanta, GA 30329, or http://www.ashrae.org/book..., CO 80112, or http://global.ihs.com/, or http://webstore.ansi.org/ansidocstore/. (iii) The UL Standard...

Motivation and Job Satisfaction of Catholic School Teachers

Science.gov (United States)

Convey, John J.

2014-01-01

This article examines the relationship between Catholic school teachers' motivation and job satisfaction. The data are derived from a survey of 716 teachers in Catholic elementary and secondary schools in three dioceses in the US (Atlanta, GA; Biloxi, MS; and Cheyenne, WY). The school's academic philosophy and its environment were important…

Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

International Nuclear Information System (INIS)

Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

1990-01-01

The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

Use of soft x-ray diagnostic on the COMPASS tokamak for investigations of sawteeth crash neighborhood and of plasma position using fast inversion methods

Czech Academy of Sciences Publication Activity Database

Imríšek, Martin; Weinzettl, Vladimír; Mlynář, Jan; Odstrčil, T.; Odstrčil, M.; Ficker, O.; Pinzon, J.R.; Ehrlacher, C.; Pánek, Radomír; Hron, Martin

2014-01-01

Roč. 85, č. 11 (2014), 11E433-11E433 ISSN 0034-6748. [Topical Conference on High-Temperature Plasma Diagnostics/20./. Atlanta, 01.06.2014-05.06.2014] R&D Projects: GA ČR GAP205/10/2055; GA MŠk(CZ) LM2011021 Institutional support: RVO:61389021 Keywords : Inversion methods * Plasma positions * Sawteeth * Soft X-ray Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.614, year: 2014 http://dx.doi.org/10.1063/1.4894528

Leaching Functions from the Outer Metropolitan Zones (Trade, Services - Increasing Peripherality of Small Towns and Rural Areas

Directory of Open Access Journals (Sweden)

Krystian Heffner

2015-01-01

Full Text Available Intensive spatial processes taking place around metropolitan areas leads to many economic, structural and social changes in their surroundings. The small towns and rural areas located in the outer zone of metropolitan areas are most affected by this functional changes. In the outer zone of a big urban canters appears a lot of new competing possibilities on the labor market and a comprehensive commercial, service and cultural offer to smaller centres. One of the most competitive advantage of the metropolitan zones becomes modern shopping centres being established in the most accessible places, providing a comprehensive shopping-services and even cultural-recreational offer.

Characterizing Spatial and Temporal Patterns of Thermal Environment and Air Quality in Taipei Metropolitan Area

Science.gov (United States)

Juang, J. Y.; Sun, C. H.; Jiang, J. A.; Wen, T. H.

2017-12-01

The urban heat island effect (UHI) caused by the regional-to-global environmental changes, dramatic urbanization, and shifting in land-use compositions has becoming an important environmental issue in recent years. In the past century, the coverage of urban area in Taipei Basin has dramatically increasing by ten folds. The strengthen of UHI effect significantly enhances the frequency of warm-night effect, and strongly influences the thermal environment of the residents in the Greater Taipei Metropolitan. In addition, the urban expansions due to dramatic increasing in urban populations and traffic loading significantly impacts the air quality and causes health issue in Taipei. In this study, the main objective is to quantify and characterize the temporal and spatial distributions of thermal environmental and air quality in the Greater Taipei Metropolitan Area by using monitoring data from Central Weather Bureau, Environmental Protection Administration. In addition, in this study, we conduct the analysis on the distribution of physiological equivalent temperature in the micro scale in the metropolitan area by using the observation data and quantitative simulation to investigate how the thermal environment is influenced under different conditions. Furthermore, we establish a real-time mobile monitoring system by using wireless sensor network to investigate the correlation between the thermal environment, air quality and other environmental factors, and propose to develop the early warning system for heat stress and air quality in the metropolitan area. The results from this study can be integrated into the management and planning system, and provide sufficient and important background information for the development of smart city in the metropolitan area in the future.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

International Nuclear Information System (INIS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-01-01

Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Science.gov (United States)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and lattice images.

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

International Nuclear Information System (INIS)

He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

Compositional and structural characterisation of GaSb and GaInSb

International Nuclear Information System (INIS)

Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

2005-01-01

Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

Science.gov (United States)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Metropolitan Blueprints of Colonial Taxation? Lessons from Fiscal Capacity Building in British and French Africa, c. 1880-1940

NARCIS (Netherlands)

Frankema, E.H.P.; Waijenburg, van M.F.M.