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Sample records for metalorganic vapor phase

  1. Zinc-induced lattice contraction in metalorganic vapor phase epitaxy grown AlGaInP

    International Nuclear Information System (INIS)

    Li, Xinyi; Zhang, Jianqin; Zhang, Wei; Lu, Hongbo; Zhou, Dayong

    2015-01-01

    p-Type Zn doped (Al x Ga 1-x ) 0.5 In 0.5 P layers have been grown on (001) GaAs substrates by metalorganic vapor phase epitaxy. The lattice constants have been carefully measured by X-ray double crystal diffraction. Mismatches between the substrates and epitaxial layers are observed in the direction corresponding to lattice contraction. The variation of fully-relaxed lattice constants calculated from symmetric (004) and asymmetric (115) diffraction shows that the contraction is related to both increasing inlet dopant flows and increasing growth temperatures. Secondary ion mass spectrometry is employed to analyze the elements in the epitaxial layers. The variations of Al, Ga, In and Zn components indicate that a decrease of In incorporation during the growth leads to the contracted lattice, although Zn atoms, which incorporate into the sites of In atoms during the doping, are smaller in covalent radius. The decrease is supposed to be caused by the competition between In and Zn atoms on the growth surface, which is well fit by the surface adsorption-trapping model. In addition, the suppression of Al and Ga incorporation by inlet dopant flows is observed. The possible cause might be the ethane generated by the pyrolysis of dopant source, which impedes the decomposition process of metalorganic sources of Al and Ga atoms. - Highlights: • AlGaInP layers are grown by metalorganic vapor phase epitaxy. • Zn induced lattice contraction in AlGaInP layers is observed. • Diethylzinc flow causes the contraction by impeding the incorporation of In. • The suppression of metalorganic decomposition by diethylzinc is noticed.

  2. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Drago, M.; Werner, C.; Pristovsek, M.; Pohl, U.W. [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstrasse 36, 10623 Berlin (Germany); Richter, W. [Universita di Roma ' ' Torvergata' ' , Dipartimento di Fisica, Via della ricerca scientifica 1, I-00133 Roma (Italy)

    2005-11-01

    Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in-situ by spectroscopic ellipsometry (SE), ex-situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire nitridation. Using the sensitivity of in-situ SE with respect to roughness we established a new growth procedure with low V/III ratio (10{sup 4}) at high temperature (580 C) and growth rates as high as 350 nm/h, leading to improved electronic layer properties and allowing for growth of comparably thick layers. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  4. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  5. Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

    2017-04-01

    Using metalorganic vapor phase epitaxy, a comprehensive study of BxGa1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750-900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to 7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with peaks, near-band-edge photoluminescence emission at 362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. Only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

  6. p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

    International Nuclear Information System (INIS)

    Jakomin, Roberto; Beaudoin, Gregoire; Gogneau, Noelle; Lamare, Bruno; Largeau, Ludovic; Mauguin, Olivia; Sagnes, Isabelle

    2011-01-01

    We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology, the structural and the electrical properties of the Ge layers. The controlled growth of p and n doped Ge layers opens the possibility to realize totally epitaxially grown Ge diodes with improved performances, for example, for solar cell applications.

  7. RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Zhang, Yuantao; Dong, Xin; Li, Guoxing; Li, Wancheng; Zhang, Baolin; Du, Guotong

    2013-03-01

    We report the growth of atomically smooth N-polar GaN on c-plane sapphire by metalorganic vapor phase epitaxy. A two-step growth technique was adopted; low-temperature growth of GaN buffer before high-temperature GaN growth. The complete two-dimensional N-polar GaN growth process was recorded by in situ reflectance. The phase composition of the low-temperature GaN was examined by X-ray diffraction pole figure measurements. The thickness of the low-temperature GaN buffer dramatically affected the crystalline and electronic properties of the N-polar GaN. A very small full width at half maximum for the (0 0 0 2) X-ray rocking curve, 51 arcs, was obtained for 700-nm-thick N-polarity GaN by optimizing the buffer thickness.

  8. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  9. Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

    Science.gov (United States)

    Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi

    2017-04-01

    We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants.

  10. Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Fiedler, A.; Schewski, R.; Baldini, M.; Galazka, Z.; Wagner, G.; Albrecht, M.; Irmscher, K.

    2017-10-01

    We present a quantitative model that addresses the influence of incoherent twin boundaries on the electrical properties in β-Ga2O3. This model can explain the mobility collapse below a threshold electron concentration of 1 × 1018 cm-3 as well as partly the low doping efficiency in β-Ga2O3 layers grown homoepitaxially by metal-organic vapor phase epitaxy on (100) substrates of only slight off-orientation. A structural analysis by transmission electron microscopy (TEM) reveals a high density of twin lamellae in these layers. In contrast to the coherent twin boundaries parallel to the (100) plane, the lateral incoherent twin boundaries exhibit one dangling bond per unit cell that acts as an acceptor-like electron trap. Since the twin lamellae are thin, we consider the incoherent twin boundaries to be line defects with a density of 1011-1012 cm-2 as determined by TEM. We estimate the influence of the incoherent twin boundaries on the electrical transport properties by adapting Read's model of charged dislocations. Our calculations quantitatively confirm that the mobility reduction and collapse as well as partly the compensation are due to the presence of twin lamellae.

  11. Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

    2011-12-01

    Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

  12. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  13. Studies of free-to-bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor-phase epitaxy and molecular-beam epitaxy

    Science.gov (United States)

    Zemon, S.; Norris, P.; Koteles, E. S.; Lambert, G.

    1986-04-01

    Photoluminescence in an applied magnetic field is shown to be useful for the identification of trace acceptor impurities in GaAs. For an epitaxial layer grown by metalorganic vapor-phase epitaxy (MOVPE), a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. In material grown by molecular-beam epitaxy (MBE), the 1.47-eV transition was identified as a conduction-band-to-deep-acceptor process. Also identified was a shallow impurity, magnesium or beryllium, not detected in zero field. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed in both MOVPE and MBE material.

  14. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

    Directory of Open Access Journals (Sweden)

    A. W. Wood

    2015-03-01

    Full Text Available A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growing discrete and compositionally uniform GaAs1−xBix well and GaAs barrier layers in the epitaxial films. High-resolution high-angle annular-dark-field (or “Z-contrast” scanning transmission electron microscopy imaging revealed concentration profiles that were periodic in the growth direction, but far more complicated in shape than the intended square wave. The observed composition profiles could explain various reports of physical properties measurements that suggest compositional inhomogeneity in GaAs1−xBix alloys as they currently are grown.

  15. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Ju, Guangxu; Honda, Yoshio; Tabuchi, Masao; Takeda, Yoshikazu; Amano, Hiroshi

    2014-01-01

    The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the In x Ga 1-x N with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra

  16. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Energy Technology Data Exchange (ETDEWEB)

    Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

    2016-03-07

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  17. Rapid thermal metalorganic chemical vapor deposition of II VI compounds

    Science.gov (United States)

    Stolyarova, S.; Amir, N.; Nemirovsky, Y.

    1998-02-01

    In this paper we analyze the potential benefits of rapid thermal processing combined with metalorganic chemical vapor deposition (RT-MOCVD) for II-VI compounds and review our first results of the application of RT-MOCVD to the growth of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe heterostructures. The RT-MOCVD growth of (1 1 1) CdTe and ZnTe was performed in the A.G. Associates Heatpulse CVD-800™ system using a horizontal quartz reactor heated from both sides by tungsten-halogen lamps. The main features of RT-MOCVD of II-VI materials are: very high growth rates (up to 60 μm/h for CdTe and 30 μm/h for ZnTe); low point defect densities in the epilayers; more abrupt interfaces and less substrate surface degradation compared to conventional MOCVD. Potential of RT-MOCVD for MCT passivation has been shown.

  18. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  19. A Review of Metalorganic Chemical Vapor Deposition of High-Temperature Superconducting Thin Films

    Science.gov (United States)

    Erbil, Ahmet; Zhang, K.; Kwak, B. S.; Boyd, E. P.

    1990-03-01

    A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.

  20. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  1. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    Science.gov (United States)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  2. Single liquid source plasma enhanced metalorganic chemical vapor deposition of YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-07-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)(sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at a substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub c0) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  3. Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials

    Science.gov (United States)

    Takiguchi, Yuki; Miyajima, Shinsuke

    2017-06-01

    Low temperature metalorganic chemical vapor deposition using trimethylgallium and water was investigated. The surface morphology of the film was almost flat at a deposition temperature below 182 °C. This flat film was a mixture of nanocrystalline and amorphous phase. The film deposited at a temperature of 272 °C resulted in a nanowire structure. X-ray diffraction measurements revealed that the nanowire film was a mixture of gallium hydroxide, gallium oxyhydroxide, and gallium tohdite or gallium oxide. We also found that post-deposition annealing above 600 °C significantly changed the crystal structure of the both flat and nanowire films. Monoclinic gallium oxide phase was dominant after the post-deposition annealing above 600 °C.

  4. Single liquid-source plasma enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7-x thin films. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Gardiner, R.; Kirlin, P.S.; Boerstler, R.W.; Steinbeck, J.

    1992-07-29

    High quality YBa2Cu3O7-x films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 degC. The as-deposited films exhibited a mirror-like surface, had transition temperature Tc = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2. Plasma enhanced metalorganic chemical vapor deposition, YBCO, superconductors.

  5. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  6. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  7. Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

    Science.gov (United States)

    1987-09-01

    take the form transported to the vicinity of a heated susceptor b (island growth). The adsorption energy of an where they diffuse through a complex...by impurities or defects incorpo- rated into the growing film, which may affect the nucleation kinetics or cause adsorption at kink sites at the...variation ’H. Temkin , R. A. Logan, I. P. van der Ziel, C. L. Reynolds, Jr.. and S. M. along the junction plane, would result in a stable phase- Tharaldsn

  8. Vapor Phase Catalytic Ammonia Reduction

    Science.gov (United States)

    Flynn, Michael T.; Harper, Lynn D. (Technical Monitor)

    1994-01-01

    This paper discusses the development of a Vapor Phase Catalytic Ammonia Reduction (VPCAR) teststand and the results of an experimental program designed to evaluate the potential of the technology as a water purification process. In the experimental program the technology is evaluated based upon product water purity, water recovery rate, and power consumption. The experimental work demonstrates that the technology produces high purity product water and attains high water recovery rates at a relatively high specific power consumption. The experimental program was conducted in 3 phases. In phase I an Igepon(TM) soap and water mixture was used to evaluate the performance of an innovative Wiped-Film Rotating-Disk evaporator and associated demister. In phase II a phenol-water solution was used to evaluate the performance of the high temperature catalytic oxidation reactor. In phase III a urine analog was used to evaluate the performance of the combined distillation/oxidation functions of the processor.

  9. Superconducting YBa2Cu3O7 - x thin films on silver substrates by in situ plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Zhao, J.; Li, Y. Q.; Chern, C. S.; Norris, P.; Gallois, B.; Kear, B.; Wessels, B. W.

    1991-01-01

    An in situ microwave plasma-enhanced metalorganic chemical vapor deposition process was used to fabricate highly c-axis oriented YBa2Cu3O7-x superconducting thin films on metallic Ag substrates. The films were deposited at a reduced substrate temperature of 740 °C in about 270 Pa of N2O ambient. Magnetic susceptibilities versus temperature of the as-deposited films show attainment of zero resistance of 85 K and composition of single (high Tc) phase. X-ray diffraction measurements reveal that the films deposited at 740 °C have highly preferential orientation of the crystallite c axes perpendicular to the substrate surface.

  10. Modeling and designing a new gas injection diffusion system for metalorganic chemical vapor deposition

    Science.gov (United States)

    Liao, C. C.; Hsiau, S. S.; Chuang, T. C.

    2018-01-01

    Metalorganic chemical vapor deposition (MOCVD) is a critical process and is widely used for the epitaxial growth of light-emitting diode (LED) wafers. The key component, a gas injection system, delivers the gas into the reactor by using a nozzle or showerhead. In this paper, the numerical simulation method was applied to investigate the thermal fluid field and to design a new gas injection system for MOCVD. In this study, we developed a new gas injection system with inlet barriers. The inlet barriers can separate the various reactive gases, reduce the prereaction, and prevent adducted particles from forming and blocking the inlet gas system. The barrier geometry, including the barrier length, the barrier inclination angle, and the V/III precursor ratio was systematically studied to determine the optimal design conditions. Higher growth rate and improved uniformity were demonstrated using the new optimal gas inlet barrier design.

  11. Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scifres, D.R.; Burnham, R.D.; Bernstein, M.; Chung, H.; Endicott, F.; Mosby, W.; Tramontana, J.; Walker, J.; Yingling, R.D. Jr.

    1982-09-15

    The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far-field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5-in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 A owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy-grown conventional double heterostructure lasers.

  12. Liquid- and Gas-Phase Diffusion of Ferrocene in Thin Films of Metal-Organic Frameworks

    Directory of Open Access Journals (Sweden)

    Wencai Zhou

    2015-06-01

    Full Text Available The mass transfer of the guest molecules in nanoporous host materials, in particular in metal-organic frameworks (MOFs, is among the crucial features of their applications. By using thin surface-mounted MOF films in combination with a quartz crystal microbalance (QCM, the diffusion of ferrocene vapor and of ethanolic and hexanic ferrocene solution in HKUST-1 was investigated. For the first time, liquid- and gas-phase diffusion in MOFs was compared directly in the identical sample. The diffusion coefficients are in the same order of magnitude (~10−16 m2·s−1, whereas the diffusion coefficient of ferrocene in the empty framework is roughly 3-times smaller than in the MOF which is filled with ethanol or n-hexane.

  13. Microbial growth with vapor-phase substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hanzel, Joanna; Thullner, Martin; Harms, Hauke [UFZ - Helmholtz Centre for Environmental Research, Department of Environmental Microbiology, Permoserstrasse 15, 04318 Leipzig (Germany); Wick, Lukas Y., E-mail: lukas.wick@ufz.de [UFZ - Helmholtz Centre for Environmental Research, Department of Environmental Microbiology, Permoserstrasse 15, 04318 Leipzig (Germany)

    2011-04-15

    Limited information exists on influences of the diffusive transport of volatile organic contaminants (VOC) on bacterial activity in the unsaturated zone of the terrestrial subsurface. Diffusion of VOC in the vapor-phase is much more efficient than in water and results in effective VOC transport and high bioavailability despite restricted mobility of bacteria in the vadose zone. Since many bacteria tend to accumulate at solid-water, solid-air and air-water interfaces, such phase boundaries are of a special interest for VOC-biodegradation. In an attempt to evaluate microbial activity toward air-borne substrates, this study investigated the spatio-temporal interplay between growth of Pseudomonas putida (NAH7) on vapor-phase naphthalene (NAPH) and its repercussion on vapor-phase NAPH concentrations. Our data demonstrate that growth rates of strain PpG7 were inversely correlated to the distance from the source of vapor-phase NAPH. Despite the high gas phase diffusivity of NAPH, microbial growth was absent at distances above 5 cm from the source when sufficient biomass was located in between. This indicates a high efficiency of suspended bacteria to acquire vapor-phase compounds and influence headspace concentration gradients at the centimeter-scale. It further suggests a crucial role of microorganisms as biofilters for gas-phase VOC emanating from contaminated groundwater or soil. - Research highlights: > Suspended bacteria have a high efficiency to degrade vapor-phase naphthalene. > Bacteria influence NAPH vapor-phase concentration gradients at centimeter-scale. > Microbial growth on vapor-phase naphthalene is inversely correlated to its source. > Bacteria are good biofilters for gas-phase NAPH emanating from contaminated sites. - Suspended bacteria have a high efficiency to degrade vapor-phase naphthalene and effectively influence vapor-phase naphthalene concentration gradients at the centimeter scale.

  14. Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition.

    Science.gov (United States)

    Zhang, X T; Liu, Z; Li, Quan; Hark, S K

    2005-09-29

    ZnCdSe alloy nanowires were successfully grown on the GaAs (100) substrate by metalorganic chemical vapor deposition using Au as a catalyst. The nanowires display two distinct types of morphology. The majority of them are straight, uniform in diameter, and have a smooth surface. However, a significant portion of them contain one or two constrictions along their length. The alloy is found to be rich in Zn; its composition, as determined from X-ray diffraction and energy-dispersive X-ray microanalysis, is close to Zn(0.9)Cd(0.1)Se. The peak energy of its room temperature near-band-edge photoluminescence is also consistent with this composition. X-ray diffraction pattern and transmission electron microscopy find both types of nanowires to be single crystalline, have the metastable wurtzite structure, and a growth direction along 100. The presence of an Au-Cd-Zn alloy particle at the tip of the nanowires supports vapor-liquid-solid as the growth mechanism. The appearance of constrictions in some of the nanowires is found to be linked to the existence of structural defects, possibly stacking faults, during growth.

  15. Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor deposition

    OpenAIRE

    Takashi, Egawa; Takashi, Jimbo; Masayoshi, Umeno

    1995-01-01

    A vertical‐cavity surface‐emitting laser diode with 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs) has been grown on a Si substrate using metalorganic chemical vapor deposition. Interfacial roughness and compositional profile of the AlAs/GaAs DBR structure were studied by cross‐sectional scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger electron spectroscopy. Cross‐sectional SEM and TEM observations reveal quasi‐periodic zigzag roughness and nonu...

  16. Metal-organic chemical vapor deposition enabling all-solid-state Li-ion microbatteries:a short review

    OpenAIRE

    Chen, C; Eichel, R-A; Notten, PHL Peter

    2017-01-01

    For powering small-sized electronic devices, all-solid-state Li-ion batteries are the most promising candidates due to its safety and allowing miniaturization. Thin film deposition methods can be used for building new all-solid-state architectures. Well-known deposition methods are sputter deposition, pulsed laser deposition, sol-gel deposition, atomic layer deposition, etc. This review summarizes thin film storage materials deposited by metal-organic chemical vapor deposition (MOCVD) for all...

  17. Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Shioda, Tomonari; Doi, Takeshi; Al Amin, Abdullah; Song Xueliang; Sugiyama, Masakazu; Shimogaki, Yukihiro; Nakano, Yoshiaki

    2006-01-01

    Selective area metalorganic chemical vapor deposition (SA-MOCVD) is effective for the monolithic integration of semiconductor optical devices. Using appropriate patterns of SiO 2 masks on a substrate, we can fabricate multiple quantum wells (MQWs) of In 1-x Ga x As y P 1-y alloys with various emission wavelengths. Therefore, we can fabricate both passive elements and active components for different wavelengths on a substrate by a single growth. To make the best use of this SA-MOCVD process, we need a simulation tool that predicts the performance of the grown layer for a given mask pattern. We constructed a simulation that predicts the emission wavelength of MQW structures grown by SA-MOCVD. The simulation took into account the gas-phase diffusion of the precursors of In and Ga and their incorporation to the growth area. The rate parameters of these processes were extracted from the growth-rate profile in the SA-MOCVD of InP and GaAs. Based on these data, we simulated the photoluminescence (PL) peak wavelength of (1) In 1-x Ga x As y P 1-y bulk films and (2) MQWs consisting of these quaternary alloys. The simulated results agreed with experimental results, indicating the feasibility of computer-assisted design (CAD) of the mask patterns for SA-MOCVD

  18. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  19. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-12-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  20. Vapor Compressor Driven Hybrid Two-Phase Loop, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will demonstrate a vapor compressor driven hybrid two-phase loop technology. The hybrid two-phase loop...

  1. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

    2012-01-01

    The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

  2. Fundamentals of Friction and Vapor Phase Lubrication

    National Research Council Canada - National Science Library

    Gellman, Andrew

    2004-01-01

    This is the final report for the three year research program on "Fundamentals of Friction and Vapor Phase Lubrication" conducted at Carnegie Mellon with support from AFOSR grant number F49630-01-1-0069...

  3. High-internal-phase emulsions stabilized by metal-organic frameworks and derivation of ultralight metal-organic aerogels

    Science.gov (United States)

    Zhang, Bingxing; Zhang, Jianling; Liu, Chengcheng; Peng, Li; Sang, Xinxin; Han, Buxing; Ma, Xue; Luo, Tian; Tan, Xiuniang; Yang, Guanying

    2016-02-01

    To design high-internal-phase emulsion (HIPE) systems is of great interest from the viewpoints of both fundamental researches and practical applications. Here we demonstrate for the first time the utilization of metal-organic framework (MOF) for HIPE formation. By stirring the mixture of water, oil and MOF at room temperature, the HIPE stabilized by the assembly of MOF nanocrystals at oil-water interface could be formed. The MOF-stabilized HIPE provides a novel route to produce highly porous metal-organic aerogel (MOA) monolith. After removing the liquids from the MOF-stabilized HIPE, the ultralight MOA with density as low as 0.01 g·cm-3 was obtained. The HIPE approach for MOA formation has unique advantages and is versatile in producing different kinds of ultralight MOAs with tunable porosities and structures.

  4. Vapor Compressor Driven Hybrid Two-Phase Loop, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The Phase I project successfully demonstrated the feasibility of the vapor compression hybrid two-phase loop (VCHTPL). The test results showed the high...

  5. In-situ growth of YBCO high- Tc superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Zhao, J.; Chern, C. S.; Li, Y. Q.; Noh, D. W.; Norris, P. E.; Zawadzki, P.; Kear, B.; Gallois, B.

    1991-01-01

    Highly c-axis oriented, highly dense, low carbon YBa 2Cu 3O x superconducting thin films have been formed in-situ at a reduced substrate temperature as low as 570°C by a novel plasma enhanced metalorganic chemical vapor deposition process. Superconducting YBa 2Cu 3O x thin films, having a zero resistance transition temperature of 82 K and critical current density of 10 4A/cm 2 at 70 K have been directly deposited on sapphire substrates by such a process.

  6. Adsorption and desorption of P on (001) InP surface in metalorganic chemical vapor deposition by surface photoabsorption

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    We studied the surface structure of (001) InP in metalorganic chemical vapor deposition (MOCVD) ambient by surface photoabsorption (SPA). A P-dimer peak at 430 nm and an In-dimer peak at 600 nm were observed from the SPA subtraction spectra. A maximum SPA reflectivity change of 8 % between the P-stabilized and the In-stabilized surfaces was obtained at 470 nm. A first-order desorption kinetics was assumed to curve-fit the SPA signal and an activation energy of 3.36 eV was obtained.

  7. In situ growth of YBa2Cu3O7 - x high Tc superconducting thin films directly on sapphire by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Zhao, J.; Li, Y. Q.; Norris, P.; Kear, B.; Gallois, B.

    1990-08-01

    Highly c-axis oriented YBa2Cu3O7-x superconducting thin films have been, in situ, deposited directly on sapphire substrate by a remote microwave plasma-enhanced metalorganic chemical vapor deposition process (PE-MOCVD). The films were deposited at a substrate temperature of 730 °C followed by a fast cooling. The as-deposited films show attainment of zero resistance at 82 K and have critical current density of 104 A/cm2 at 70 K. ac susceptibility measurement indicated that the films contain a single superconducting phase. PE-MOCVD was carried out in a commercial-scale MOCVD reactor with capability of uniform deposition over 100 cm2 per growth run.

  8. Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

    2009-07-01

    Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

  9. InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, Hongqi; Yang, Tao

    2017-06-01

    We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition (MOCVD) with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core without any misfit dislocations.

  10. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

    2018-01-01

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10‑5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  11. Oxidizer partial pressure window for YBa2Cu3O(7-x) thin film formation by metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Zhao, J.; Norris, P. E.; Garrison, S. M.; Yau, K.; Li, Y. Q.; Gallois, B. M.; Kear, B. H.

    1992-10-01

    We conducted a systematic study of oxidizer partial pressure effects on both the superconducting transport properties and structural properties of YBa2Cu3O(7-x) (YBCO) films grown by conventional metalorganic chemical vapor deposition (MOCVD). Superconducting YBCO thin films were grown in partial N2O pressures ranging from 0.4 to 45 Torr and at substrate temperatures of 500 and 700 C. We observed a window in oxidizer partial pressure within which YBCO thin films can be formed in the as-deposited state by the MOCVD process. A trend of increasing b-axis orientation as the oxidizer partial pressure increased was revealed by detailed X-ray diffraction. The reduction of superconducting properties for films grown at high oxidizer partial pressure might result from the lack of surface mobility.

  12. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Gaire, C.; Rao, S.; Riley, M.; Chen, L.; Goyal, A.; Lee, S.; Bhat, I.; Lu, T.-M.; Wang, G.-C.

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {111} CdTe //{001} Ni with [11 ¯ 0] CdTe //[010] Ni and [112 ¯ ] CdTe //[100] Ni . The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11 ¯ 0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30° oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  13. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    KAUST Repository

    Hwang, David

    2017-12-13

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  14. Controlled synthesis and properties of ZnO nanostructures grown by metalorganic chemical vapor deposition: A review

    Science.gov (United States)

    Park, Won Il

    2008-12-01

    The unique and fascinating properties of one-dimensional (1D) Zn) nanostructures have triggered tremendous interest in exploring their possibilities for future electronic and photonic device applications. This paper provides current information on the progress of ZnO nanostructure grown by metalorganic chemical vapor deposition (MOCVD); it covers issues ranging from controlled synthesis of various ZnO nanostructures to their properties and potential applications. The unique features of MOCVD have been exploited to grow high-quality 1D ZnO nanostructures with tunable sizes, enabling the study of excitonic dynamics in low-dimensional nanostructures and size-dependent quantum confinement. A better understanding of the growth behaviors of ZnO nanostructures—particularly the anisotropic surface energy and adsorbate-surface interaction with regard to the crystal planes—allows control over the positions, morphologies, and surface polarities of the ZnO nanostructures as appropriate for device integration.

  15. Formation and characterization of the MgO protecting layer deposited by plasma-enhanced metal-organic chemical-vapor deposition

    CERN Document Server

    Kang, M S; Byun, J C; Kim, D S; Choi, C K; Lee, J Y; Kim, K H

    1999-01-01

    MgO films were prepared on Si(100) and soda-lime glass substrates by using plasma-enhanced metal-organic chemical-vapor deposition. Various ratios of the O sub 2 /CH sub 3 MgO sup t Bu gas mixture and various gas flow rates were tested for the film fabrications. Highly (100)-oriented MgO films with good crystallinity were obtained with a 10 sccm CH sub 3 MgO sup t Bu flow without an O sub 2 gas flow. About 5 % carbon was contained in all the MgO films. The refractive index and the secondary electron emission coefficient for the best quality film were 1.43 and 0.45, respectively. The sputtering rate was about 0.2 nm/min for 10 sup 1 sup 1 cm sup - sup 3 Ar sup + ion density. Annealing at 500 .deg. C in an Ar ambient promoted the grain size without inducing a phase transition.

  16. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

    Science.gov (United States)

    Kim, Hyunseok; Ren, Dingkun; Farrell, Alan C.; Huffaker, Diana L.

    2018-02-01

    We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires—nucleation at low temperature followed by nanowire elongation at high temperature—almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100%. A 100% growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature. Compared with trimethylgallium (TMGa) which has been exclusively employed in the vapor–solid phase growth of GaAs nanowires by MOCVD, the proposed growth technique using TEGa is advantageous because of lower growth temperature and fully suppressed radial overgrowth. It is also known that GaAs grown by TEGa induce less impurity incorporation compared with TMGa, and therefore the proposed method could be a building block for GaAs nanowire-based high-performance optoelectronic and nanoelectronic devices on both III–V and silicon platforms.

  17. Homochiral metal-organic framework used as a stationary phase for high-performance liquid chromatography.

    Science.gov (United States)

    Kong, Jiao; Zhang, Mei; Duan, Ai-Hong; Zhang, Jun-Hui; Yang, Rui; Yuan, Li-Ming

    2015-02-01

    Metal-organic frameworks are promising porous materials. Chiral metal-organic frameworks have attracted considerable attention in controlling enantioselectivity. In this study, a homochiral metal-organic framework [Co(2) (D-cam)(2) (TMDPy)] (D-cam = D-camphorates, TMDPy = 4,4'-trimethylenedipyridine) with a non-interpenetrating primitive cubic net has been used as a chiral stationary phase in high-performance liquid chromatography. It has allowed the successful separation of six positional isomers and six chiral compounds. The good selectivity and baseline separation, or at least 60% valley separation, confirmed its excellent molecular recognition characteristics. The relative standard deviations for the retention time of run-to-run and column-to-column were less than 1.8 and 3.1%, respectively. These results demonstrate that [Co(2) (D-cam)(2) (TMDPy)] may represent a promising chiral stationary phase for use in high-performance liquid chromatography. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

    2007-01-01

    The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

  19. Compositional effects on plasma-enhanced metalorganic chemical vapor deposition of YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhao, J.; Chern, C. S.; Li, Y. Q.; Norris, P.; Gallois, B.

    1991-06-01

    Epitaxial YBa2Cu3O(7-x) superconducting thin films with a zero resistance transition temperatures of about 90 K have been prepared, in situ, on LaAlO3 by a plasma-enhanced metalorganic chemical vapor deposition process at a substrate temperature of 670 C in 1 torr partial pressure of N2O. The composition of the films was varied systematically to investigate the effect of changes in the Ba/Y and Cu/Y ratio on the film properties. The results indicated that superconducting current densities exceeding 10 to the 6th A/sq cm, measured at 77 K by a transport method, could be obtained on films with an anomalously wide range of film compositions. Excess Cu (up to 60 percent and deficiency in Ba (down to 30 percent) from their stoichiometric values did not significantly degrade the superconducting properties of the films. As the composition approached the Y-Ba-Cu ratio of 1-2-3, an improvement in surface morphology and a decrease in superconducting transition temperature were found.

  20. Epitaxial growth of BaTiO3 thin films by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Zhao, J.; Luo, L.; Lu, P.; Li, Y. Q.; Norris, P.; Kear, B.; Cosandey, F.; Maggiore, C. J.; Gallois, B.; Wilkens, B. J.

    1992-03-01

    High-quality BaTiO3 thin films have been epitaxially grown on (001) LaAlO3 and (001) NdGaO3 substrates by plasma-enhanced metalorganic chemical vapor deposition at a substrate temperature of 680 °C. X-ray diffraction θ-2θ, ω, and φ scan results all indicate that single-crystalline BaTiO3 thin films were epitaxially grown on the substrates with orientation perpendicular to the substrates. The high degree of epitaxial crystallinity is further confirmed by Rutherford backscattering spectrometry which gives a minimum yield of 7.5% and 11% for films deposited on LaAlO3 and NdGaO3, respectively. Cross-section high-resolution electron microscopy images also showed that the layer epitaxy of BaTiO3 was characterized by an atomically abrupt film/substrate interface. Scanning electron micrographs showed that these films had very smooth surface morphologies.

  1. Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Deng, Y.; Zhao, D.G.; Le, L.C.; Jiang, D.S.; Wu, L.L.; Zhu, J.J.; Wang, H.; Liu, Z.S.; Zhang, S.M.; Yang, Hui; Liang, J.W.

    2011-01-01

    Research highlights: The growth rate and its relationship with Al content of MOCVD-grown AlGaN alloy films are investigated. It is found that both parasitic reaction and competitive adsorption play important roles in determining the growth rate and Al incorporation in AlGaN. Low reactor pressure and a decrease of absolute amount of Ga atoms arriving on the substrate may lead to a higher Al content in AlGaN film. The research results are helpful to control the Al content of AlGaN during the materials growth. - Abstract: The growth rate and its relationship with growth conditions of AlGaN alloy films by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that both parasitic reaction and competitive adsorption play important roles in determining the growth rate and Al incorporation in AlGaN. Low reactor pressure can weaken parasitic reactions, thus increasing the Al composition. In addition, a decrease of absolute amount of Ga atoms arriving on the substrate may lead to a lower Ga competitive power, and then a higher Al content in AlGaN film.

  2. Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Hu, Haiyang; Wang, Jun; Cheng, Zhuo; Yang, Zeyuan; Yin, Haiying; Fan, Yibing; Ma, Xing; Huang, Yongqing; Ren, Xiaomin

    2018-04-01

    In this work, a technique for the growth of GaAs epilayers on Si, combining an ultrathin amorphous Si buffer layer and a three-step growth method, has been developed to achieve high crystalline quality for monolithic integration. The influences of the combined technique for the crystalline quality of GaAs on Si are researched in this article. The crystalline quality of GaAs epilayer on Si with the combined technique is investigated by scanning electron microscopy, double crystal X-ray diffraction (DCXRD), photoluminescence, and transmission electron microscopy measurements. By means of this technique, a 1.8-µm-thick high-quality GaAs/Si epilayer was grown by metal-organic chemical vapor deposition. The full-width at half-maximum of the DCXRD rocking curve in the (400) reflection obtained from the GaAs/Si epilayers is about 163 arcsec. Compared with only using three-step growth method, the current technique reduces etch pit density from 3 × 106 cm-2 to 1.5 × 105 cm-2. The results demonstrate that the combined technique is an effective approach for reducing dislocation density in GaAs epilayers on Si.

  3. Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

    Science.gov (United States)

    Rice, Anthony; Allerman, Andrew; Crawford, Mary; Beechem, Thomas; Ohta, Taisuke; Spataru, Catalin; Figiel, Jeffrey; Smith, Michael

    2018-03-01

    The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows and deposition temperature. Low, intermediate, and high NH3 flow regimes were found to lead to fundamentally different deposition behaviors. The low NH3 flow regimes yielded discolored films of boron sub-nitride. The intermediate NH3 flow regime yielded stoichiometric films that could be deposited as thick films. The high NH3 flow regime yielded self-limited deposition with thicknesses limited to a few mono-layers. A Langmuir-Hinshelwood mechanism is proposed to explain the onset of self-limited behavior for the high NH3 flow regime. Photoluminescence characterization determined that the intermediate and high NH3 flow regimes could be further divided into low and high temperature behaviors with a boundary at 1500 °C. Films deposited with both high NH3 flow and high temperature exhibited room temperature free exciton emission at 210 nm and 215.9 nm.

  4. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gaire, C. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Rao, S. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Riley, M. [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Chen, L. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Goyal, A. [Oak Ridge National Lab, Oak ridge, TN, 37831-6116 (United States); Lee, S. [US Army ARDEC Benet Labs, Watervliet, NY, 12189-4050 (United States); Bhat, I. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Lu, T.-M. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Wang, G.-C., E-mail: wangg@rpi.edu [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States)

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {l_brace}111{r_brace}{sub CdTe}//{l_brace}001{r_brace}{sub Ni} with [11{sup Macron }0]{sub CdTe}//[010]{sub Ni} and [112{sup Macron }] {sub CdTe}//[100]{sub Ni}. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11{sup Macron }0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30 Degree-Sign oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  5. Colorimetric Detection of Water Vapor Using Metal-Organic Framework Composites.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    Purpose: Water vapor trapped in encapsulation materials or enclosed volumes leads to corrosion issues for critical NW components. Sandia National Laboratories has created a new diagnostic to indicate the presence of water in weapon systems. Impact: Component exposure to water now can be determined instantly, without need for costly, time-consuming analytical methods.

  6. Metal-organic aerogel as a coating for solid-phase microextraction

    Energy Technology Data Exchange (ETDEWEB)

    Saraji, Mohammad, E-mail: saraji@cc.iut.ac.ir; Shahvar, Ali

    2017-06-22

    An iron-based metal-organic aerogel was synthesized using metal-organic framework nanoparticles and applied as a fiber coating for solid-phase microextraction (SPME). Chemical, thermal and morphological characteristics of the material were investigated. Headspace SPME followed by gas chromatography-electron capture detection was used for the determination of chlorobenzenes in the environmental samples. The key experimental factors affecting the extraction efficiency of the analytes, such as ionic strength, extraction and desorption temperature, and extraction time were investigated and optimized. The applicability of the coating for the extraction of chlorobenzenes from the environmental samples including river and tap water, sludge, and coastal soil was evaluated. The detection limits were in the range of 0.1–60 ng L{sup −1}. The relative standard deviations were between 2.0 and 5.0%. The extraction recovery of the analytes was in the range of 88–100%. Compared to the commercial PDMS fiber, the present fiber showed better extraction efficiency. - Highlights: • Metal-organic aerogel was synthesized and used as a novel fiber coating for SPME. • The new coating material showed high surface area and good thermal stability. • GC-ECD was used for determination of chlorobenzenes in environmental samples. • The method showed fast extraction and better efficiency than PDMS commercial fiber.

  7. Monofilament Vaporization Propulsion (MVP) System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Monofilament Vaporization Propulsion (MVP) is a new propulsion technology targeted at secondary payload applications. It does not compromise on performance while...

  8. Monofilament Vaporization Propulsion (MVP) System, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Monofilament Vaporization Propulsion (MVP) is an innovative new propulsion technology targeted at secondary payload applications. The approach with MVP, rather than...

  9. The liquid to vapor phase transition in excited nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, J.B.; Moretto, L.G.; Phair, L.; Wozniak, G.J.; Beaulieu, L.; Breuer, H.; Korteling, R.G.; Kwiatkowski, K.; Lefort, T.; Pienkowski, L.; Ruangma, A.; Viola, V.E.; Yennello, S.J.

    2001-05-08

    For many years it has been speculated that excited nuclei would undergo a liquid to vapor phase transition. For even longer, it has been known that clusterization in a vapor carries direct information on the liquid-vapor equilibrium according to Fisher's droplet model. Now the thermal component of the 8 GeV/c pion + 197 Au multifragmentation data of the ISiS Collaboration is shown to follow the scaling predicted by Fisher's model, thus providing the strongest evidence yet of the liquid to vapor phase transition.

  10. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Zhiyu; Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn; Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an, Shaanxi 710071 (China); Su, Xujun [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123 (China); Shi, Xuefang [School of Advanced Materials and Nanotechnology, Xidian University, Xi' an, Shaanxi 710071 (China)

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  11. Low-temperature in situ formation of Y-Ba-Cu-O high Tc superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

    1990-06-01

    Highly textured, highly dense, superconducting YBa2Cu3O7-x thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 °C by a remote microwave plasma-enhanced metalorganic chemical vapor deposition process (PE-MOCVD). Nitrous oxide was used as the oxidizer gas. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K. PE-MOCVD was carried out in a commercial scale MOCVD reactor.

  12. High density, ultrafine precipitates in YBa2Cu3O(7-x) thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Lu, P.; Li, Y. Q.; Zhao, J.; Chern, C. S.; Gallois, B.; Norris, P.; Kear, B.; Cosandey, F.

    1992-03-01

    Thin films of yttrium-rich YBa2Cu3O(7-x) with c-axis orientation prepared by plasma-enhanced metalorganic chemical vapor deposition have been examined by high-resolution transmission electron microscopy. Yttria precipitates smaller than 50 (A) in size have been identified in the matrix. They are uniformly distributed, have a high density as large as 10 exp 24 per cubic meter and are oriented with respect to the matrix. The magnetic field dependence of the critical current density of the thin films indicates that the yttria precipitates are effective flux pinning centers.

  13. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

    2016-02-01

    Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

  14. Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH sub 3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle.

  15. Magnetic phase transition induced by electrostatic gating in two-dimensional square metal-organic frameworks

    Science.gov (United States)

    Wang, Yun-Peng; Li, Xiang-Guo; Liu, Shuang-Long; Fry, James N.; Cheng, Hai-Ping

    2018-03-01

    We investigate theoretically magnetism and magnetic phase transitions induced by electrostatic gating of two-dimensional square metal-organic framework compounds. We find that electrostatic gating can induce phase transitions between homogeneous ferromagnetic and various spin-textured antiferromagnetic states. Electronic structure and Wannier function analysis can reveal hybridizations between transition-metal d orbitals and conjugated π orbitals in the organic framework. Mn-containing compounds exhibit a strong d -π hybridization that leads to partially occupied spin-minority bands, in contrast to compounds containing transition-metal ions other than Mn, for which electronic structure around the Fermi energy is only slightly spin split due to weak d -π hybridization and the magnetic interaction is of the Ruderman-Kittel-Kasuya-Yosida type. We use a ferromagnetic Kondo lattice model to understand the phase transition in Mn-containing compounds in terms of carrier density and illuminate the complexity and the potential to control two-dimensional magnetization.

  16. Metal-Organic Framework Thin Films as Stationary Phases in Microfabricated Gas-Chromatography Columns.

    Energy Technology Data Exchange (ETDEWEB)

    Read, Douglas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sillerud, Colin Halliday [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-01-01

    The overarching goal of this project is to integrate Sandia's microfabricated gas-chromatography ( GC) columns with a stationary phase material that is capable of retaining high-volatility chemicals and permanent gases. The successful integration of such a material with GCs would dramatically expand the repertoire of detectable compounds for Sandia's various microanalysis systems. One such promising class of candidate materials is metal-organic frameworks (MOFs). In this report we detail our methods for controlled deposition of HKUST-1 MOF stationary phases within GC columns. We demonstrate: the chromatographic separation of natural gas; a method for determining MOF film thickness from chromatography alone; and the first-reported GC x GC separation of natural gas -- in general -- let alone for two disparate MOF stationary phases. In addition we determine the fundamental thermodynamic constant for mass sorption, the partition coefficient, for HKUST-1 and several light hydrocarbons and select toxic industrial chemicals.

  17. Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Yuan, Huibo; Li, Lin; Li, Zaijin; Wang, Yong; Qu, Yi; Ma, Xiaohui; Liu, Guojun

    2018-01-01

    Nanowires (NWs) of GaAs and InGaAs/GaAs axial heterostructure are fabricated by metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) mechanism. Thin film of Au is coated to generate catalytic droplets and the impact of film thickness on distribution of catalytic droplets is studied. With growth temperature varying, different geometries of GaAs NWs are observed and an assumption has been proposed to explain the phenomenon. InGaAs/GaAs NWs with axial heterostructures are synthesized. Most of InGaAs/GaAs NWs are perpendicular to substrates with cylindrical morphology and distinct heterostructure interface. Energy Dispersive X-ray Spectroscopy (EDX) line-scan's been applied to investigate the concentration changes of nanowires, indicating pure axial heterostructures without radial growth.

  18. A Kinetic Model for GaAs Growth by Hydride Vapor Phase Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Kevin L.; Simon, John; Jain, Nikhil; Young, David L.; Ptak, Aaron J.

    2016-11-21

    Precise control of the growth of III-V materials by hydride vapor phase epitaxy (HVPE) is complicated by the fact that the growth rate depends on the concentrations of nearly all inputs to the reactor and also the reaction temperature. This behavior is in contrast to metalorganic vapor phase epitaxy (MOVPE), which in common practice operates in a mass transport limited regime where growth rate and alloy composition are controlled almost exclusively by flow of the Group III precursor. In HVPE, the growth rate and alloy compositions are very sensitive to temperature and reactant concentrations, which are strong functions of the reactor geometry. HVPE growth, particularly the growth of large area materials and devices, will benefit from the development of a growth model that can eventually be coupled with a computational fluid dynamics (CFD) model of a specific reactor geometry. In this work, we develop a growth rate law using a Langmuir-Hinshelwood (L-H) analysis, fitting unknown parameters to growth rate data from the literature that captures the relevant kinetic and thermodynamic phenomena of the HVPE process. We compare the L-H rate law to growth rate data from our custom HVPE reactor, and develop quantitative insight into reactor performance, demonstrating the utility of the growth model.

  19. Low temperature vapor phase digestion of graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pierce, Robert A.

    2017-04-18

    A method for digestion and gasification of graphite for removal from an underlying surface is described. The method can be utilized to remove graphite remnants of a formation process from the formed metal piece in a cleaning process. The method can be particularly beneficial in cleaning castings formed with graphite molding materials. The method can utilize vaporous nitric acid (HNO.sub.3) or vaporous HNO.sub.3 with air/oxygen to digest the graphite at conditions that can avoid damage to the underlying surface.

  20. Vapor-phase carbonylation of dimethoxymethane over H-Faujasite.

    Science.gov (United States)

    Celik, Fuat E; Kim, Tae-Jin; Bell, Alexis T

    2009-01-01

    Carbonylation gets a phase lift: The usual liquid-phase, high-pressure processes for carbonylating formaldehydes are avoided in a novel vapor-phase reaction. Using an acid zeolite (Faujasite) at near-atmospheric pressure dimethoxymethane (DMM; the dimethyl acetal of formaldehyde; see scheme) is carbonylated to produce methyl methoxyacetate (MMAc). This approach provides a new route to ethylene glycol under mild conditions.

  1. Experimental comparison of chiral metal-organic framework used as stationary phase in chromatography.

    Science.gov (United States)

    Xie, Sheng-Ming; Zhang, Mei; Fei, Zhi-Xin; Yuan, Li-Ming

    2014-10-10

    Chiral metal-organic frameworks (MOFs) are a new class of multifunctional material, which possess diverse structures and unusual properties such as high surface area, uniform and permanent cavities, as well as good chemical and thermal stability. Their chiral functionality makes them attractive as novel enantioselective adsorbents and stationary phases in separation science. In this paper, the experimental comparison of a chiral MOF [In₃O(obb)₃(HCO₂)(H₂O)] solvent used as a stationary phase was investigated in gas chromatography (GC), high-performance liquid chromatography (HPLC) and capillary electrochromatography (CEC). The potential relationship between the structure and components of chiral MOFs with their chiral recognition ability and selectivity are presented. Copyright © 2014 Elsevier B.V. All rights reserved.

  2. The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Wong, Michael Ming

    The InAlGaN, or III-nitride, material system has received much interest from the research community. A direct wide bandgap semiconductor, GaN offers a high breakdown field (>3 x 106 V/cm) due to its large bandgap energy of 3.4 eV, high electron saturation velocity (1.5 x 10 7 cm/s, predicted peak up to 2.7 x 107 cm/s), good thermal conductivity (≥1.7 W/cm K), and reasonable mobility (800 cm 2/V s). In an AlGaN/GaN heterostructure, the formation of a two-dimensional electron gas (2DEG) leads to a higher electron mobility (2000 cm2/V s) and a high sheet density (1--5 x 1013 cm -2). This makes transistors based on the III-nitride material system ideal for high-temperature, high-power, and high-frequency applications. Two such transistors include the heterojunction field-effect transistor (HFET) and bipolar junction transistor (BJT), which includes the heterojunction bipolar transistor (HBT). Both HFETs and HBTs were studied, and the epitaxial heterostructures were grown by the metalorganic chemical vapor deposition (MOCVD) technique. The MOCVD process and system are described, along with the growth details. As material characterization is important for the optimization of growth, several of the techniques used are discussed. An extensive study to improve the performance of AlGaN/GaN HFETs is detailed. Through the use of a delta-doped, binary barrier novel device structure, the highest reported maximum drain current and transconductance is reported: IDSmax = 1.82 A/mm and gm = 331 mS/mm. The device also exhibits excellent RF characteristics. HBTs based on the III-nitride material system face a more difficult challenge associated with p-type material. Development of HBTs is still in the early stages, although there are reports of working devices. The gain is still below its potential, but many of the issues have been identified. Two novel structures are reported for the first time, a GaN/InGaN/GaN pnp HBT and a AlGaN/GaN npn graded-base and collector-up HBT. The

  3. Toxicity of vapor phase petroleum contaminants to microbial degrader communities

    International Nuclear Information System (INIS)

    Long, S.C.; Davey, C.A.

    1994-01-01

    Petroleum products constitute the largest quantity of synthetic organic chemical products produced in the US. They are comprised of mostly hydrocarbon constituents from many different chemical classes including alkenes, cycloalkanes, aromatic compounds, and polyaromatic hydrocarbons. Many petroleum constituents are classified as volatile organic compounds or VOCs. Petroleum products also constitute a major portion of environmental pollution. One emerging technology, with promise for applications to VOCs in subsurface soil environments, is bioventing coupled with soil vapor extraction. These technologies involve volatilization of contaminants into the soil gas phase by injection and withdrawal of air. This air movement causes enhancement of the aerobic microbial degradation of the mobilized vapors by the indigenous populations. This study investigated the effects of exposure of mixed, subsurface microbial communities to vapor phase petroleum constituents or vapors of petroleum mixtures. Soil slurries were prepared and plated onto mineral salts agar plates and exposed to vapor phase contaminants at equilibrium with pure product. Representative n-alkane, branched alkane, cycloalkane, and aromatic compounds were tested as well as petroleum product mixtures. Vapor exposure altered the numbers and morphologies of the colonies enumerated when compared to controls. However, even at high, equilibrium vapor concentrations, microbial degrader populations were not completely inhibited

  4. Metalorganic chemical vapor deposition of iron disulfide and its use for solar energy conversion

    Science.gov (United States)

    Ennaoui, Ahmed; Fiechter, Sebastian; Vogel, Ralf; Giersig, M.; Weller, Horst; Tributsch, Helmut

    1992-12-01

    Thin polycrystalline films of iron disulfide have been grown on different substrates by chemical vapour deposition. The films were characterized using optical absorption and TEM. RBS and EDAX analysis has been used to explore the chemical stoichiometry. XRD and FTIR allowed the identification of both FeS2 phases pyrite and marcasite. A novel method for sensitization of highly porous Ti02 elecrodes with ultra thin (10-20 nm) polycrystalline films of FeS2 (pyrite) is presented. Photoelectrochemical solar cell using the above electrode generated high photovoltage of up to 600mV compared with single crystalline electrode (200 mV). In this device the semiconductor with a small band gap and high absorption coefficient (FeS2 pyrite; EG = 0.9 eV; a = 6 x 105 cm-1) absorbs the light and injects electrons into the conduction band the wide band gap semiconductor (Ti02 anatase; EG = 3.2 eV). Regeneration of holes is taking place by electron transfer from redox system in the electrolyte.

  5. Microstructural and superconducting properties of high current metal-organic chemical vapor deposition YBa2Cu3O7-δ coated conductor wires

    International Nuclear Information System (INIS)

    Holesinger, T G; Maiorov, B; Ugurlu, O; Civale, L; Chen, Y; Xiong, X; Xie, Y; Selvamanickam, V

    2009-01-01

    Metal-organic chemical vapor deposition (MOCVD) on flexible, ion beam assisted deposition MgO templates has been used to produce high critical current density (J c ) (Y,Sm) 1 Ba 2 Cu 3 O y (REBCO) films suitable for use in producing practical high temperature superconducting (HTS) coated conductor wires. Thick films on tape were produced with sequential additions of 0.7 μm of REBCO via a reel-to-reel progression through a custom-designed MOCVD reactor. Multi-pass processing for thick film deposition is critically dependent upon minimizing surface secondary phase formation. Critical currents (I c s) of up to 600 A/cm width (t = 2.8 μm, J c = 2.6 MA cm -2 , 77 K, self-field) were obtained in short lengths of HTS wires. These high performance MOCVD films are characterized by closely spaced (Y,Sm) 2 O 3 nanoparticle layers that may be tilted relative to the film normal and REBCO orientation. Small shifts in the angular dependence of J c in low and intermediate applied magnetic fields can be associated with the tilted nanoparticle layers. Also present in these films were YCuO 2 nanoplates aligned with the YBCO matrix (short dimension perpendicular to the film normal), threading dislocations, and oriented composite defects (OCDs). The latter structures consist of single or multiple a-axis oriented grains coated on each side with insulating (Y,Sm) 2 O 3 or CuO. The OCDs formed a connected network of insulating phases by the end of the fourth pass. Subsequent attempts at adding additional layers did not increase I c . There is an inconsistency between the measured J c and the observed microstructural degradation that occurs with each additional layer, suggesting that previously deposited layers are improving with each repeated reactor pass. These dynamic changes suggest a role for post-processing to optimize superconducting properties of as-deposited films, addressing issues associated with reproducibility and manufacturing yield.

  6. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was

  7. Electrical and structural characterizations of crystallized Al{sub 2}O{sub 3}/GaN interfaces formed by in situ metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X., E-mail: xliu@ece.ucsb.edu; Yeluri, R.; Kim, J.; Keller, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Jackson, C. M.; Arehart, A. R.; Ringel, S. A. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Wu, F.; Mazumder, B.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2016-01-07

    Al{sub 2}O{sub 3} films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al{sub 2}O{sub 3} films were crystalline and primarily γ-phase. The Al{sub 2}O{sub 3}/Ga-GaN and Al{sub 2}O{sub 3}/N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al{sub 2}O{sub 3}-semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al{sub 2}O{sub 3} thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10{sup −8} A/cm{sup 2} with larger Al{sub 2}O{sub 3} thicknesses. The interface states densities (D{sub it}) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D{sub it} measured by CC-DLTS and CC-DLOS were 6.6 × 10{sup 12} and 8.8 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/Ga-GaN and 8.6 × 10{sup 12} and 8.6 × 10{sup 12 }cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al{sub 2}O{sub 3}/Ga-GaN (Al{sub 2}O{sub 3}/N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al{sub 2}O{sub 3} layer, were discussed in accordance with the experimental results and relevant studies in the literature.

  8. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, X.; Yeluri, R.; Kim, J.; Keller, S.; Mishra, U. K.; Jackson, C. M.; Arehart, A. R.; Ringel, S. A.; Wu, F.; Mazumder, B.; Speck, J. S.

    2016-01-01

    Al 2 O 3 films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al 2 O 3 films were crystalline and primarily γ-phase. The Al 2 O 3 /Ga-GaN and Al 2 O 3 /N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al 2 O 3 -semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al 2 O 3 thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10 −8 A/cm 2 with larger Al 2 O 3 thicknesses. The interface states densities (D it ) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D it measured by CC-DLTS and CC-DLOS were 6.6 × 10 12 and 8.8 × 10 12 cm −2 eV −1 for Al 2 O 3 /Ga-GaN and 8.6 × 10 12 and 8.6 × 10 12  cm −2 eV −1 for Al 2 O 3 /N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al 2 O 3 /Ga-GaN (Al 2 O 3 /N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al 2 O 3 layer, were discussed in accordance with the experimental results and relevant studies in the literature

  9. Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In{sub 2}O{sub 3} from In(tmhd){sub 3} as a solid precursor

    Energy Technology Data Exchange (ETDEWEB)

    Szkutnik, P. D., E-mail: pierre.szkutnik@cea.fr; Jiménez, C. [Université Grenoble Alpes, CNRS, LMGP, 3 Parvis Louis Néel, Minatec CS 50257, 38016 Grenoble Cedex 1 (France); Angélidès, L.; Todorova, V. [Air Liquide Electronics Systems, 8 rue des Méridiens–Sud Galaxie BP 228, 38433 Échirolles Cedex (France)

    2016-02-15

    A solid delivery system consisting of a source canister, a gas management, and temperature controlled enclosure designed and manufactured by Air Liquide Electronics Systems was tested in the context of gas-phase delivery of the In(tmhd){sub 3} solid precursor. The precursor stream was delivered to a thermal metalorganic chemical vapor deposition reactor to quantify deposition yield under various conditions of carrier gas flow and sublimation temperature. The data collected allowed the determination of characteristic parameters such as the maximum precursor flow rate (18.2 mg min{sup −1} in specified conditions) and the critical mass (defined as the minimum amount of precursor able to attain the maximum flow rate) found to be about 2.4 g, as well as an understanding of the influence of powder distribution inside the canister. Furthermore, this qualification enabled the determination of optimal delivery conditions which allowed for stable and reproducible precursor flow rates over long deposition times (equivalent to more than 47 h of experiment). The resulting In{sub 2}O{sub 3} layers was compared with those elaborated via pulsed liquid injection obtained in the same chemical vapor deposition chamber and under the same deposition conditions.

  10. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1

  11. Microwave resonators from YBa2Cu3O(7-delta) thin films made by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Young, K. H.; Robinson, Mcd.; Negrete, G. V.; Zhao, J.; Chern, C. S.; Li, Y. Q.; Norris, P. E.

    1992-08-01

    Epitaxial YBa2Cu3O(7-delta) thin films on LaAlO3 deposited by plasma-enhanced metalorganic chemical vapor deposition were tested in a 100 GHz microwave cavity and as patterned 5.6 GHz resonators. Two films, both having high critical temperature and high critical current density, exhibited low-power Q's of 5400 and 8000 as 5.6 GHz microstrip resonators when operated at 77 K. The equivalent surface resistances at 10 GHz are 1.7 and 1 m-Omega, respectively. Despite the fact that these films are thinner than typical laser ablation films, the results are within a factor of 2 of the best laser ablation prepared YBa2Cu3O(7-delta) films.

  12. Large critical current densities in YBa2Cu3O7- x thin films formed by plasma-enhanced metalorganic chemical vapor deposition at reduced temperature

    Science.gov (United States)

    Zhao, J.; Li, Y. Q.; Chern, C. S.; Huang, W.; Norris, P.; Gallois, B.; Kear, B.; Lu, P.; Cosandey, F.

    1991-04-01

    YBa2Cu3O7- x (YBCO) superconducting thin films with a critical current density exceeding 1 x 106 A/cm2 at 77.7 K were prepared by a plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. The thin films (130 nm thick) were formed in-situ on LaAlO3 substrates at a temperature of 670‡ C in 2 Torr partial pressure of activated N2O. Resistivity and magnetic susceptibility measurements of the as-deposited films show a sharp superconducting transition temperature of 89.8 K. Critical current densities were measured by the dc transport method with a patterned bridge of 120 × 40 Μm. Both x-ray diffraction and high resolution electron microscopy measurements indicate that films grew epitaxially with the c-axis perpendicular to the surface of the substrate.

  13. Effects of substrate temperature on growth orientation and superconducting properties of YBa2Cu3O7 - x films prepared by metalorganic chemical vapor deposition

    Science.gov (United States)

    Li, Y. Q.; Zhao, J.; Chern, C. S.; Gallois, B.; Norris, P.; Kear, B.

    1992-03-01

    The effects of substrate temperature on the structural and superconducting properties of YBa2Cu3O7-x films prepared by metalorganic chemical vapor deposition have been studied in the temperature range of 550 to 690 °C. Highly c-axis oriented films with transition temperatures of 90 K and critical current densities at 77.5 K and 0 T larger than 106 A/cm2 could be produced at substrate temperatures above 650 °C. As the temperature was decreased, the amount of a-axis orientation in the film increased. Films grown at a substrate temperature of 600 °C showed a strong a-axis orientation with a transition temperature of 83.5 K and a critical current density of 4.5×105 A/cm2 at 77.5 K and 0 T.

  14. Transport properties of YBa2Cu3O7-x thin films formed by plasma-enhanced metalorganic chemical vapor deposition at reduced temperatures

    Science.gov (United States)

    Zhao, J.; Norris, P.; Peterson, T. L.; Maartense, I.; Chern, C. S.; Lu, P.; Kear, B.; Li, Y. Q.; Gallois, B.

    1992-04-01

    YBa2Cu3O7-x superconducting thin films with a high transition temperature of 90.7 K and a high critical current density of 4.1×106 A/cm2 at 77.7 K and 0 T were prepared by a plasma-enhanced metalorganic chemical vapor deposition process. The films with sharp transition and critical current density ≳2×106 A/cm2 were also formed in situ on LaAlO3 at a substrate temperature as low as 640 °C. Magnetic susceptibility measurements of the as deposited films show sharp superconducting transition temperatures with narrow widths <0.3 K.

  15. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  16. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

    Science.gov (United States)

    Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K.

    2018-04-01

    Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ˜4 × 1012 cm-2 fewer positive fixed charges and up to ˜1 × 1013 cm-2 eV-1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.

  17. Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

    Science.gov (United States)

    Brown, David F.; Chu, Rongming; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

    2009-04-01

    N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n-type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6×1012 cm-2 and 1370 cm2 V-1 s-1, respectively. HEMTs with a gate length of 0.7 μm had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.

  18. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    Science.gov (United States)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  19. Metalorganic chemical vapor deposition of {beta}-FeSi{sub 2} on {beta}-FeSi{sub 2} seed crystals formed on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Suzuno, Mitsushi; Akutsu, Keiichi; Kawakami, Hideki [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan); Akiyama, Kensuke [Kanagawa Industrial Technology Center 705-1 Shimoizumi, Ebina, Kanagawa 243-0435 (Japan); Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)

    2011-10-03

    We have fabricated a {beta}-FeSi{sub 2} film by metalorganic chemical vapor deposition on a Si(001) substrate with {beta}-FeSi{sub 2} seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the {beta}-FeSi{sub 2} film. The surface of the grown {beta}-FeSi{sub 2} film was atomically flat, and step-and-terrace structure was clearly observed. Multi-domain structure of {beta}-FeSi{sub 2} whose average size was approximately 200 nm however was revealed. The photoresponse was obtained in an infrared light region ({approx} 0.95 eV) at temperatures below 200 K. The external quantum efficiency reached a maximum, being as large as 25% at 100 K when a bias voltage was 2.0 V.

  20. Recycling of metal-organic chemical vapor deposition waste of GaN based power device and LED industry by acidic leaching: Process optimization and kinetics study

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Kang, Leeseung; Park, Kyung-Soo; Lee, Chan Gi; Hong, Hyun Seon; Park, Jeung-Jin

    2015-05-01

    Recovery of metal values from GaN, a metal-organic chemical vapor deposition (MOCVD) waste of GaN based power device and LED industry is investigated by acidic leaching. Leaching kinetics of gallium rich MOCVD waste is studied and the process is optimized. The gallium rich waste MOCVD dust is characterized by XRD and ICP-AES analysis followed by aqua regia digestion. Different mineral acids are used to find out the best lixiviant for selective leaching of the gallium and indium. Concentrated HCl is relatively better lixiviant having reasonably faster kinetic and better leaching efficiency. Various leaching process parameters like effect of acidity, pulp density, temperature and concentration of catalyst on the leaching efficiency of gallium and indium are investigated. Reasonably, 4 M HCl, a pulp density of 50 g/L, 100 °C and stirring rate of 400 rpm are the effective optimum condition for quantitative leaching of gallium and indium.

  1. Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

    Science.gov (United States)

    Terasawa, Tomo-o.; Saiki, Koichiro

    2015-03-01

    To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

  2. electrocatalytic reduction of oxygen at vapor phase polymerized poly ...

    African Journals Online (AJOL)

    Preferred Customer

    ABSTRACT. We successfully polymerized poly(3,4-ethylenedioxidethiophene) by vapor phase polymerization technique on rotating glassy carbon disk electrode. The catalytic activity of this electrode towards oxygen reduction reaction was investigated and showed remarkable activity. Rotating disk voltammetry was used to ...

  3. Electrocatalytic reduction of oxygen at vapor phase polymerized ...

    African Journals Online (AJOL)

    We successfully polymerized poly(3,4-ethylenedioxidethiophene) by vapor phase polymerization technique on rotating glassy carbon disk electrode. The catalytic activity of this electrode towards oxygen reduction reaction was investigated and showed remarkable activity. Rotating disk voltammetry was used to study the ...

  4. Quantitative Infrared Spectra of Vapor Phase Chemical Agents

    Energy Technology Data Exchange (ETDEWEB)

    Sharpe, Steven W.; Johnson, Timothy J.; Chu, P M.; Kleimeyer, J; Rowland, Brad; Gardner, Patrick J.

    2003-04-21

    Quantitative high resolution (0.1 cm -1) infrared spectra have been acquired for a number of pressure broadened (101.3 KPa N2), vapor phase chemicals including: Sarin (GB), Soman (GD), Tabun (GA), Cyclosarin (GF), VX, nitrogen mustard (HN3), sulfur mustard (HD) and Lewisite (L).

  5. Liquid-phase extraction coupled with metal-organic frameworks-based dispersive solid phase extraction of herbicides in peanuts.

    Science.gov (United States)

    Li, Na; Wang, Zhibing; Zhang, Liyuan; Nian, Li; Lei, Lei; Yang, Xiao; Zhang, Hanqi; Yu, Aimin

    2014-10-01

    Liquid-phase extraction coupled with metal-organic frameworks-based dispersive solid phase extraction was developed and applied to the extraction of pesticides in high fatty matrices. The herbicides were ultrasonically extracted from peanut using ethyl acetate as extraction solvent. The separation of the analytes from a large amount of co-extractive fat was achieved by dispersive solid-phase extraction using MIL-101(Cr) as sorbent. In this step, the analytes were adsorbed on MIL-101(Cr) and the fat remained in bulk. The herbicides were separated and determined by high-performance liquid chromatography. The experimental parameters, including type and volume of extraction solvent, ultrasonication time, volume of hexane and eluting solvent, amount of MIL-101(Cr) and dispersive solid phase extraction time, were optimized. The limits of detection for herbicides range from 0.98 to 1.9 μg/kg. The recoveries of the herbicides are in the range of 89.5-102.7% and relative standard deviations are equal or lower than 7.0%. The proposed method is simple, effective and suitable for treatment of the samples containing high content of fat. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Perret, Edith [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700 Fribourg, Switzerland; Xu, Dongwei [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Highland, M. J. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Stephenson, G. B. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Zapol, P. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fuoss, P. H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Munkholm, A. [Munkholm Consulting, Mountain View, California 94043, USA; Thompson, Carol [Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

    2017-12-04

    Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

  7. The effect of thermal annealing on the adherence of Al2O3-films deposited by low-pressure, metal-organic, chemical-vapor deposition on AISI 304

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van de Vendel, D.; van Corbach, H.D.; Fransen, T.; Gellings, P.J.

    1995-01-01

    Thin alumina films, deposited at 280°C by low-pressure, metal-organic, chemical-vapor deposition on stainless steel, type AISI 304, were annealed at 0.17 kPa in a nitrogen atmosphere for 2,4, and 17 hr at 600, 700, and 800°C. The effect of the annealing process on the adhesion of the thin alumina

  8. Direct Vapor-Phase Bromination of Multiwall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Ilya Mazov

    2012-01-01

    Full Text Available We present the simple procedure of the vapor-phase bromination of multiwall carbon nanotubes (MWNTs at moderate temperatures. MWNTs with average diameter 9±3 nm were treated with Br2 vapors at 250°C to produce Br-functionalized product. Transmission electron microscopy analysis was used to prove low damage of MWNT walls during bromination. X-ray photoelectron spectroscopy (XPS and differential thermal analysis (DTA were used to investigate chemical composition of the surface of initial and brominated nanotubes. The experimental results show that the structure of MWNTs is not affected by the bromination process and the total amount of Br-containing surface functions reaches 2.5 wt. %. Electrophysical properties of initial and brominated MWNTs were investigated showing decrease of conductivity for functionalized sample. Possible mechanism of the vapor-phase bromination via surface defects and oxygen-containing functional groups was proposed according to data obtained. Additional experiments with bromination of annealed low-defected MWNTs were performed giving Br content a low as 0.75 wt. % proving this hypothesis.

  9. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  10. Moisture-Stable Zn(II) Metal-Organic Framework as a Multifunctional Platform for Highly Efficient CO2 Capture and Nitro Pollutant Vapor Detection.

    Science.gov (United States)

    Chen, Di-Ming; Tian, Jia-Yue; Chen, Min; Liu, Chun-Sen; Du, Miao

    2016-07-20

    A moisture-stable three-dimensional (3D) metal-organic framework (MOF), {(Me2NH2)[Zn2(bpydb)2(ATZ)](DMA)(NMF)2}n (1, where bpydb = 4,4'-(4,4'-bipyridine-2,6-diyl)dibenzoate, ATZ = deprotonated 5-aminotetrazole, DMA = N,N-dimethylacetamide, and NMF = N-methylformamide), with uncoordinated N-donor sites and charged framework skeleton was fabricated. This MOF exhibits interesting structural dynamic upon CO2 sorption at 195 K and high CO2/N2 (127) and CO2/CH4 (131) sorption selectivity at 298 K and 1 bar. Particularly, its CO2/CH4 selectivity is among the highest MOFs for selective CO2 separation. The results of Grand Canonical Monte Carlo (GCMC) simulation indicate that the polar framework contributes to the strong framework-CO2 binding at zero loading, and the tetrazole pillar contributes to the high CO2 uptake capacity at high loading. Furthermore, the solvent-responsive luminescent properties of 1 indicate that it could be utilized as a fluorescent sensor to detect trace amounts of nitrobenzene in both solvent and vapor systems.

  11. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Fu Chen

    2017-12-01

    Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  12. Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhao, D.G.; Jiang, D.S.; Le, L.C.; Wu, L.L.; Li, L.; Zhu, J.J.; Wang, H.; Liu, Z.S.; Zhang, S.M.; Jia, Q.J.; Yang Hui

    2012-01-01

    Highlights: ► The interface roughness of InGaN/GaN MQWs are characterized by XRD. ► Smooth interface is very important for the blue–violet InGaN/GaN MQWs. ► EL of InGaN MQWs could be improved by controlling In incorporation parameters. - Abstract: The growth parameters which can modify In incorporation and affect electroluminescence (EL) properties of blue–violet InGaN/GaN multiple quantum wells (MQWs) during metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that a suitable increase of trimethylindium (TMIn) flux during the growth of InGaN well can increase both EL intensity and EL peak wavelength. However, when the growth temperature of well decreases from 810 to 800 °C, the EL intensity decreases although the EL peak wavelength increases. X-ray diffraction results demonstrate that the interface roughness plays an important role in determining the EL intensity of InGaN/GaN MQWs. It is suggested to grow blue–violet MQWs with high structural quality by suitably increasing the TMIn flux and at a relatively high growth temperature.

  13. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Le, L.C.; Wu, L.L.; Li, L. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhu, J.J.; Wang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Liu, Z.S. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Jia, Q.J. [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China); Yang Hui [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2012-11-05

    Highlights: Black-Right-Pointing-Pointer The interface roughness of InGaN/GaN MQWs are characterized by XRD. Black-Right-Pointing-Pointer Smooth interface is very important for the blue-violet InGaN/GaN MQWs. Black-Right-Pointing-Pointer EL of InGaN MQWs could be improved by controlling In incorporation parameters. - Abstract: The growth parameters which can modify In incorporation and affect electroluminescence (EL) properties of blue-violet InGaN/GaN multiple quantum wells (MQWs) during metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that a suitable increase of trimethylindium (TMIn) flux during the growth of InGaN well can increase both EL intensity and EL peak wavelength. However, when the growth temperature of well decreases from 810 to 800 Degree-Sign C, the EL intensity decreases although the EL peak wavelength increases. X-ray diffraction results demonstrate that the interface roughness plays an important role in determining the EL intensity of InGaN/GaN MQWs. It is suggested to grow blue-violet MQWs with high structural quality by suitably increasing the TMIn flux and at a relatively high growth temperature.

  14. Self-regulation of Bi/(Bi+Fe) ratio in metalorganic chemical vapor deposition of BiFeO3 thin films

    Science.gov (United States)

    Fujisawa, Hironori; Yoshimura, Nao; Nakashima, Seiji; Shimizu, Masaru

    2017-10-01

    Metalorganic chemical vapor deposition (MOCVD) is one of the suitable techniques for practical applications of BiFeO3 films. To develop the potential of MOCVD as a device fabrication process, we investigated the relationship between the film and gas compositions, and the growth under highly oxidizing conditions using O2 and O3 gases. In the growth of epitaxial BiFeO3 thin films on SrRuO3-covered 4° vicinal SrTiO3(001) at 620 °C, the self-regulation of the film composition was achieved for Bi and Fe precursor supply ratios between 62.1 to 78.5% under O2 and 56.1 to 73.2% under 5 wt % O3-mixed O2 atmospheres. The leakage was very sensitive to the precursor supply ratio and oxidizing gas. 150-nm-thick MOCVD-BiFeO3 films grown using O2+O3 gas showed the minimum leakage current density of 2.3 × 10-7 A/cm2 at +1 V. The highly oxidizing growth conditions using O3 can suppress the leakage while precise composition control is required.

  15. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

    Science.gov (United States)

    Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

  16. High-quality YBa2Cu3O(7-x) thin films by plasma-enhanced metalorganic chemical vapor deposition at low temperature

    Science.gov (United States)

    Zhao, J.; Li, Y. Q.; Chern, C. S.; Lu, P.; Norris, P.; Gallois, B.; Kear, B.; Cosandey, F.; Wu, X. D.; Muenchausen, R. E.

    1991-09-01

    Single-crystalline epitaxial YBa2Cu3O(7-x) thin films with a sharp superconducting transition temperature of 90 K and a critical current density of 3.3 x 10 to the 6th A/sq cm at 77 K were prepared by a plasma-enhanced metalorganic chemical vapor deposition process. The films were formed in situ on (100) LaAlO3 substrates at a temperature of 670 C in 2 Torr partial pressure of N2O. X-ray analysis indicated that films grew epitaxially with the c-axis perpendicular to the substrate and the a and b axes uniformly aligned along the LaAlO3 100-line directions. High-resolution transmission electron microscopy along with electron diffraction revealed that the films grew epitaxially with atomically abrupt film-substrate interfaces. The high degree of epitaxial crystallinity of the films was also confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9 percent.

  17. Fabrication of high-quality Y-Ba-Cu-O thin films by plasma-enhanced metal-organic chemical vapor deposition

    Science.gov (United States)

    Zhao, J.; Norris, P.

    The great versatility of plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD) in its application to the growth of high-quality YBa2Cu3O(7-x) (YBCO) has been demonstrated. Single-crystal epitaxial YBCO thin films with sharp superconducting transition temperatures above 89 K and critical current densities greater than 1 x 10(exp 6) A/sq cm at 77 K were formed in-situ by PE-MOCVD at a low substrate temperature of 670 C and a high oxygen partial pressure of 1 Torr. Our results reveal that high-quality YBCO thin films can be formed over an anomalously wide range of film compositions. The high degree of epitaxial crystallinity of the films was confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9%. High-resolution transmission electron microscopy revealed that the films grew epitaxially with the c axis normal to the substrate surface and atomically abrupt interface.

  18. Enhanced and uniform in-field performance in long (Gd, Y)-Ba-Cu-O tapes with zirconium doping fabricated by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Selvamanickam, V; Guevara, A; Zhang, Y; Kesgin, I; Xie, Y; Carota, G; Chen, Y; Dackow, J; Zhang, Y; Zuev, Y; Cantoni, C; Goyal, A; Coulter, J; Civale, L

    2010-01-01

    The influence of Zr doping in (Gd, Y)-Ba-Cu-O ((Gd, Y)BCO) tapes made by metal-organic chemical vapor deposition has been studied with a specific objective of uniform and reproducible enhancement in in-field critical current (I c ) over long lengths. 50 m long tapes with 7.5 and 10 at.% Zr doping in 1 μm thick (Gd, Y)BCO films have been found to exhibit a sharply enhanced peak in I c in the orientation of field parallel to the c-axis and retain 28% of their self-field I c value at 77 K and 1 T. BaZrO 3 (BZO) nanocolumn density in the cross-sectional microstructure was found to increase with increasing Zr addition. The end segments of the 50 m long tapes were found to display nearly identical angular dependence of critical current at 77 K and 1 T, indicative of the uniformity in in-field performance over this length. A 610 m long tape was fabricated with 10% Zr doping and a 130 m segment showed a 3.2% uniformity in critical current measured every meter in the orientation of B || c-axis. A retention factor of 36% of the zero-field I c value measured at 0.52 T over the 130 m is consistent with that obtained in short samples.

  19. Enhanced and uniform in-field performance in long (Gd, Y)-Ba-Cu-O tapes with zirconium doping fabricated by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Guevara, A; Zhang, Y; Kesgin, I [Texas Center for Superconductivity and Department of Mechanical Engineering, University of Houston, Houston, TX 77059 (United States); Xie, Y; Carota, G; Chen, Y; Dackow, J [SuperPower Incorporated, 450 Duane Avenue Schenectady, NY 12304 (United States); Zhang, Y; Zuev, Y; Cantoni, C; Goyal, A [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Coulter, J; Civale, L [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2010-01-15

    The influence of Zr doping in (Gd, Y)-Ba-Cu-O ((Gd, Y)BCO) tapes made by metal-organic chemical vapor deposition has been studied with a specific objective of uniform and reproducible enhancement in in-field critical current (I{sub c}) over long lengths. 50 m long tapes with 7.5 and 10 at.% Zr doping in 1 {mu}m thick (Gd, Y)BCO films have been found to exhibit a sharply enhanced peak in I{sub c} in the orientation of field parallel to the c-axis and retain 28% of their self-field I{sub c} value at 77 K and 1 T. BaZrO{sub 3} (BZO) nanocolumn density in the cross-sectional microstructure was found to increase with increasing Zr addition. The end segments of the 50 m long tapes were found to display nearly identical angular dependence of critical current at 77 K and 1 T, indicative of the uniformity in in-field performance over this length. A 610 m long tape was fabricated with 10% Zr doping and a 130 m segment showed a 3.2% uniformity in critical current measured every meter in the orientation of B || c-axis. A retention factor of 36% of the zero-field I{sub c} value measured at 0.52 T over the 130 m is consistent with that obtained in short samples.

  20. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  1. Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

    2007-01-01

    Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

  2. Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition

    KAUST Repository

    Foronda, Humberto M.

    2017-06-19

    Coherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.

  3. Metalorganic chemical vapor deposition of Er{sub 2}O{sub 3} thin films: Correlation between growth process and film properties

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2009-02-27

    Er{sub 2}O{sub 3} thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 deg. C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O{sub 2}. The effects of growth parameters such as the substrate, the O{sub 2} plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er{sub 2}O{sub 3} thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), {alpha}-Al{sub 2}O{sub 3} (0001) and amorphous glass by MOCVD. Growth under O{sub 2} remote plasma activation results in an increase in growth rate and in (100)-oriented Er{sub 2}O{sub 3} films with high refractive index and transparency in the visible photon energy range.

  4. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, Yuh-Shiuan; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Mehta, Karan; Jia, Xiao Jia; Shen, Shyh-Chiang; Yoder, P. Douglas; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.

    2016-08-01

    We report the crack-free growth of a 45-pair Al0.30Ga0.70N/Al0.04Ga0.96N distributed Bragg reflector (DBR) on 2 in. diameter AlN/sapphire template by metalorganic chemical vapor deposition. To mitigate the cracking issue originating from the tensile strain of Al0.30Ga0.70N on GaN, an AlN template was employed in this work. On the other hand, strong compressive strain experienced by Al0.04Ga0.96N favors 3D island growth, which is undesired. We found that inserting an 11 nm thick GaN interlayer upon the completion of AlN template layer properly managed the strain such that the Al0.30Ga0.70N/Al0.04Ga0.96N DBR was able to be grown with an atomically smooth surface morphology. Smooth surfaces and sharp interfaces were observed throughout the structure using high-angle annular dark-field imaging in the STEM. The 45-pair AlGaN-based DBR provided a peak reflectivity of 95.4% at λ = 368 nm with a bandwidth of 15 nm.

  5. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  6. Formation of ZnO nanodot arrays along the step edges on R-face sapphire by metalorganic chemical vapor deposition

    Science.gov (United States)

    Kametani, Keisuke; Imamoto, Hiroshi; Fujita, Shizuo

    2006-05-01

    Dot array formation of zinc oxide (ZnO) along the linear single steps was demonstrated on sapphire substrates under near atmosphere pressure by metalorganic chemical vapor deposition (MOCVD). Sapphire substrates of (1 1 2bar 0), (0 0 0 1) and (1 1bar 0 2) planes (A-plane, C-plane and R-plane, respectively) were employed as templates for manufacturing the nanostructures. For highly controlling dot array formation the substrates were prepared by annealing at 1000 °C for 3 h in air after chemical treatment. The step arrays were easily prepared on C-plane and R-plane sapphire. The linearly aligned ZnO nanodot arrays were formed on R-plane sapphire along the step edges over several ten micrometers. The result can be attributed to the smaller number of dangling bonds on R-plane than on A-plane and C-plane, enhancing the surface diffusion length. Sapphire can be a good template for manipulating II-VI semiconductor on it to form nanostructures even at near atmosphere pressure by a conventional MOCVD.

  7. Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

    1994-06-01

    Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

  8. Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

    CERN Document Server

    Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

    1998-01-01

    We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

  9. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  10. Field trapping of subsurface vapor phase petroleum hydrocarbons

    International Nuclear Information System (INIS)

    Moyer, E.E.; Ostendorf, D.W.; Kampbell, D.H.; Xie, Y.

    1994-01-01

    Soil gas samples from intact soil cores were collected on adsorbents at a field site, then thermally desorbed and analyzed by laboratory gas chromatography (GC). Vertical concentration profiles of predominant vapor phase petroleum hydrocarbons under ambient conditions were obtained for the zone directly above the capillary fringe. Water and residual phase weathered aviation gasoline were present in this region of the profile. The sampling, trapping, and GC methodology was effective in most respects. Reproducibility, trapping, and desorption efficiency were generally satisfactory, and different sorbent tubes gave similar results. A minor shortcoming of the method occurred with the most volatile compound, 2,3-dimethylbutane, which was poorly retained during several weeks of storage time and was also poorly desorbed. Vapor phase concentrations of predominant hydrocarbon compounds all increased with depth at one sampling location. At a more highly contaminated location, concentrations of highly volatile compounds increased with depth while concentrations of less volatile compounds remained constant or decreased, possibly indicating distillation effects. Scatter in the data was attributed to heterogeneities in water and residual phase distribution

  11. Mechanical Alloying of Metal-Organic Frameworks.

    Science.gov (United States)

    Panda, Tamas; Horike, Satoshi; Hagi, Keisuke; Ogiwara, Naoki; Kadota, Kentaro; Itakura, Tomoya; Tsujimoto, Masahiko; Kitagawa, Susumu

    2017-02-20

    The solvent-free mechanical milling process for two distinct metal-organic framework (MOF) crystals induced the formation of a solid solution, which is not feasible by conventional solution-based syntheses. X-ray and STEM-EDX studies revealed that performing mechanical milling under an Ar atmosphere promotes the high diffusivity of each metal ion in an amorphous solid matrix; the amorphous state turns into the porous crystalline structure by vapor exposure treatment to form a new phase of a MOF solid solution. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Vapor phase versus liquid phase grafting of meso-porous alumina

    NARCIS (Netherlands)

    Sripathi, V.G.P.; Mojet, Barbara; Nijmeijer, Arian; Benes, Nieck Edwin

    2013-01-01

    Functionalization of meso-porous c-alumina has been performed by grafting of 3-Aminopropyltrimethoxysilane (3APTMS) simultaneously from either the liquid phase or from the vapor phase. In both cases, after grafting nitrogen physisorption indicates that the materials remain meso-porous with

  13. Recent developments in metalorganic precursors for metalorganic chemical vapour deposition

    Science.gov (United States)

    Jones, A. C.; Rushworth, S. A.; Auld, J.

    1995-01-01

    Volatile metalorganic compounds are finding an increasing application in the deposition of metals and semiconductors by metalorganic chemical vapour deposition (MOCVD). In this paper, the use of some new precursor systems in the growth of selected metals and alloys is reviewed with emphasis being placed on precursor chemistry in the gas phase and at the growth surface.

  14. Ultrafast dynamics of the acoustic vaporization of phase-change microdroplets

    NARCIS (Netherlands)

    Shpak, O.; Kokhuis, T.J.A.; Luan, Y.; Lohse, Detlef; de Jong, N.; Fowlkes, B.; Fabilli, M.; Versluis, Michel

    2013-01-01

    Acoustically sensitive emulsions are a promising tool for medical applications such as localized drug delivery. The physical mechanisms underlying the ultrasound-triggered nucleation and subsequent vaporization of these phase-change emulsions are largely unexplored. Here, the acoustic vaporization

  15. Photoisomerization of a small cyclic ketone in the vapor phase

    Science.gov (United States)

    Chattopadhyay, Aparajeo; Mondal, Koushik; Samanta, Monoj; Chakraborty, Tapas

    2017-05-01

    Photoisomerization channels in the vapor phase photochemistry of cyclohexanone (CH) are studied by performing photolysis with 311 nm UV light, and analyzing the photoproducts by means of FTIR spectroscopy. In addition to 5-hexenal, identified previously as a photoisomerization product, we observe an efficient parallel isomerization channel producing butylketene as a primary photoproduct, but it remained unidentified in earlier studies. Calculation at DFT/B3LYP/6-311++G∗∗ level predicts formation of this ketene to be favorable both with respect to thermodynamic and kinetic factors.

  16. Effects of composition on microstructure and superconducting properties of YBa 2Cu 3O 7- x thin films prepared by plasma enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Li, Y. Q.; Zhao, J.; Chern, C. S.; Lu, P.; Gallois, B.; Norris, P.; Kear, B.; Cosandey, F.

    1992-05-01

    The microstructure and the superconducting properties of YBa 2Cu 3O 7- x thin films prepared by plasma-enhanced metalorganic chemical vapor deposition have been investigated systematically as a function of metal composition. Yttria precipitates are not apparent on the surface of yttrium-rich films. They are densely distributed within the films, their average size is of the order of 5-10 nm and their density can be as high as 10 24/m 3. Excess copper leads to the precipitation of copper oxide (CuO) particles on the surface of the films, but they are not found in the bulk. High transition temperatures and high critical current densities have been obtained over a wide range of compositions. Transition temperatures higher than 86 K are always obtained when the Cu/Ba ratio is larger than the stoichiometric ratio of 1.5. Films with Cu/Ba ratio larger than 1.5 and a Ba/Y ratio less than 1.7 usually have a critical current density larger than 10 6 A/cm 2 at 77 K and 0 T. The dependence of the critical current density on temperature follows a power law, Jc A(1- T/ Tc) n. The value of n is 2 for stoichiometric and barium-rich films and 1 for yttrium-rich films. The best films with transition temperatures of 90K, critical current densities in excess of 10 6 A/cm 2 at 77.5 K, and smooth surfaces are observed when the Ba/Y ration is around 1.6 and the Cu/Ba ratio is around 1.8.

  17. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Volintiru, I.; Creatore, M.; Kniknie, B. J.; Spee, C. I. M. A.; Sanden, M. C. M. van de

    2007-01-01

    Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance R s and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (R s 4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (R s ≅100 Ω/□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth

  18. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  19. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  20. Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

    Science.gov (United States)

    2015-04-09

    ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Epitaxial reactor, MOCVD , Infrared Materials, CdTe and...collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources...gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or

  1. Quantitative Infrared Spectra of Vapor Phase Chemical Agents

    Energy Technology Data Exchange (ETDEWEB)

    Sharpe, Steven W.; Johnson, Timothy J.; Chu, P. M.; Kleimeyer, J.; Rowland, Brad

    2003-08-01

    Quantitative, moderately high resolution (0.1 cm-1) infrared spectra have been acquired for a number of nitrogen broadened (1 atm N2) vapor phase chemicals including: Sarin (GB), Soman (GD), Tabun (GA), Cyclosarin (GF), VX, Nitrogen Mustard (HN3), Sulfur Mustard (HD), and Lewisite (L). The spectra are acquired using a heated, flow-through White Cell1 of 5.6 meter optical path length. Each reported spectrum represents a statistical fit to Beer’s law, which allows for a rigorous calculation of uncertainty in the absorption coefficients. As part of an ongoing collaboration with the National Institute of Standards and Technology (NIST), cross-laboratory validation is a critical aspect of this work. In order to identify possible errors in the Dugway flow-through system, quantitative spectra of isopropyl alcohol from both NIST and Pacific Northwest National Laboratory (PNNL) are compared to similar data taken at Dugway proving Grounds (DPG).

  2. Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te

    International Nuclear Information System (INIS)

    Lee, S.B.; Magel, L.K.; Tang, M.F.S.; Stevenson, D.A.; Tregilgas, J.H.; Goodwin, M.W.; Strong, R.L.

    1990-01-01

    We report on the characterization of mercury cadmium telluride (Hg 1-x Cd x Te) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg 1-x Cd x Te to larger bandgap material. The crystal perfection is evaluated using defect etching, electron beam and electrolyte electroreflectance (EBER and EER), and Rutherford backscattering spectrometry (RBS). Hall measurements are used to measure carrier densities and mobilities. Surface concentrations and concentration profiles are measured for the ISOVPE grown layers by transmission Fourier transform infrared spectroscopy (FTIR) and electron-probe microanalysis (EPMA) to establish quantitative informations about composition control. Metal--insulator-semiconductor (MIS) structures were made and the properties important to device performance such as compositional uniformity, storage time, and carrier concentration are measured. The ISOVPE layers are compared in quality to films grown by other methods and show promise for MIS devices

  3. Dispersive micro-solid-phase extraction of herbicides in vegetable oil with metal-organic framework MIL-101.

    Science.gov (United States)

    Li, Na; Zhang, Liyuan; Nian, Li; Cao, Bocheng; Wang, Zhibing; Lei, Lei; Yang, Xiao; Sui, Jiaqi; Zhang, Hanqi; Yu, Aimin

    2015-03-04

    Dispersive microsolid-phase extraction based on metal-organic framework has been developed and applied to the extraction of triazine and phenylurea herbicides in vegetable oils in this work. The herbicides were directly extracted with MIL-101 from diluted vegetables oils without any further cleanup. The separation and determination of herbicides were carried out on high performance liquid chromatography. The effects of experimental parameters, including volume ratio of n-hexane to oil sample, mass of MIL-101, extraction time, centrifugation time, eluting solvent, and elution time were investigated. The Student's t test was applied to evaluate the selected experimental conditions. The limits of detection for the herbicides ranged from 0.585 to 1.04 μg/L. The recoveries of the herbicides ranged from 87.3 to 107%. Our results showed that the present method is rapid, simple, and effective for extracting herbicides in vegetable oils.

  4. Vapor phase elemental sulfur amendment for sequestering mercury in contaminated soil

    Science.gov (United States)

    Looney, Brian B.; Denham, Miles E.; Jackson, Dennis G.

    2014-07-08

    The process of treating elemental mercury within the soil is provided by introducing into the soil a heated vapor phase of elemental sulfur. As the vapor phase of elemental sulfur cools, sulfur is precipitated within the soil and then reacts with any elemental mercury thereby producing a reaction product that is less hazardous than elemental mercury.

  5. Determination of Cannabinoid Vapor Pressures to Aid in Vapor Phase Detection of Intoxication.

    Science.gov (United States)

    Lovestead, Tara M; Bruno, Thomas J

    2017-09-01

    The quest for a reliable means to detect cannabis intoxication with a breathalyzer is ongoing. To design such a device, it is important to understand the fundamental thermodynamics of the compounds of interest. The vapor pressures of two important cannabinoids, cannabidiol (CBD) and Δ 9 -tetrahydrocannabinol (Δ 9 -THC), are presented, as well as the predicted normal boiling temperature (NBT) and the predicted critical constants (these predictions are dependent on the vapor pressure data). The critical constants are typically necessary to develop an equation of state (EOS). EOS-based models can provide estimations of thermophysical properties for compounds to aid in designing processes and devices. An ultra-sensitive, quantitative, trace dynamic headspace analysis sampling called porous layered open tubular-cryoadsorption (PLOT-cryo) was used to measure vapor pressures of these compounds. PLOT-cryo affords short experiment durations compared to more traditional techniques for vapor pressure determination (minutes versus days). Additionally, PLOT-cryo has the inherent ability to stabilize labile solutes because collection is done at reduced temperature. The measured vapor pressures are approximately 2 orders of magnitude lower than those measured for n-eicosane, which has a similar molecular mass. Thus, the difference in polarity of these molecules must be impacting the vapor pressure dramatically. The vapor pressure measurements are presented in the form of Clausius-Clapeyron (or van't Hoff) equation plots. The predicted vapor pressures that would be expected at near ambient conditions (25 °C) are also presented.

  6. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  7. Microstructural and superconducting properties of high current metal-organic chemical vapor deposition YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coated conductor wires

    Energy Technology Data Exchange (ETDEWEB)

    Holesinger, T G; Maiorov, B; Ugurlu, O; Civale, L [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chen, Y; Xiong, X; Xie, Y; Selvamanickam, V [SuperPower, Inc., Schenectady, NY 12304 (United States)

    2009-04-15

    Metal-organic chemical vapor deposition (MOCVD) on flexible, ion beam assisted deposition MgO templates has been used to produce high critical current density (J{sub c}) (Y,Sm){sub 1}Ba{sub 2}Cu{sub 3}O{sub y} (REBCO) films suitable for use in producing practical high temperature superconducting (HTS) coated conductor wires. Thick films on tape were produced with sequential additions of 0.7 {mu}m of REBCO via a reel-to-reel progression through a custom-designed MOCVD reactor. Multi-pass processing for thick film deposition is critically dependent upon minimizing surface secondary phase formation. Critical currents (I{sub c}s) of up to 600 A/cm width (t = 2.8 {mu}m, J{sub c} = 2.6 MA cm{sup -2}, 77 K, self-field) were obtained in short lengths of HTS wires. These high performance MOCVD films are characterized by closely spaced (Y,Sm){sub 2}O{sub 3} nanoparticle layers that may be tilted relative to the film normal and REBCO orientation. Small shifts in the angular dependence of J{sub c} in low and intermediate applied magnetic fields can be associated with the tilted nanoparticle layers. Also present in these films were YCuO{sub 2} nanoplates aligned with the YBCO matrix (short dimension perpendicular to the film normal), threading dislocations, and oriented composite defects (OCDs). The latter structures consist of single or multiple a-axis oriented grains coated on each side with insulating (Y,Sm){sub 2}O{sub 3} or CuO. The OCDs formed a connected network of insulating phases by the end of the fourth pass. Subsequent attempts at adding additional layers did not increase I{sub c}. There is an inconsistency between the measured J{sub c} and the observed microstructural degradation that occurs with each additional layer, suggesting that previously deposited layers are improving with each repeated reactor pass. These dynamic changes suggest a role for post-processing to optimize superconducting properties of as-deposited films, addressing issues associated with

  8. Pyrolytic in situ magnetization of metal-organic framework MIL-100 for magnetic solid-phase extraction.

    Science.gov (United States)

    Huo, Shu-Hui; An, Hai-Yan; Yu, Jing; Mao, Xue-Feng; Zhang, Zhe; Bai, Lei; Huang, Yan-Feng; Zhou, Peng-Xin

    2017-09-29

    In this study, we report a facile, environmental friendly fabrication of a type of magnetic metal-organic framework (MOF) MIL-100 that can be used for magnetic solid-phase extraction (MSPE). The magnetic MOF composites were fabricated using in situ calcination method. The as-synthesized materials exhibited both high porosity and magnetic characteristics. They used for the MSPE of polycyclic aromatic hydrocarbons (PAHs) from water samples. Such MOF-based magnetic solid-phase extraction in combination with gas chromatography equipped with a flame ionization detector (GC-FID), exhibited wide linearity (0.02-250μgL -1 ), low detection limits (4.6-8.9ngL -1 ), and high enrichment factors (452-907) for PAHs. The relative standard deviations (RSDs) for intra- and inter-day extractions of PAHs were ranging from 1.7% to 9.8% and 3.8% to 9.2%, respectively. The recoveries for spiked PAHs (1μgL -1 ) in water samples were in the range of 88.5% to 106.6%. The results showed that the special anion-π orbital (electron donor-acceptor) interaction and π-π stacking between magnetic MIL-100 and PAHs play an important role in the adsorption of PAHs. Copyright © 2017. Published by Elsevier B.V.

  9. Solid State Transmitters for Water Vapor and Ozone DIAL Systems, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The focus of this Select Phase II program is to build and deliver laser components both for airborne water vapor and ozone DIAL systems. Specifically, Fibertek...

  10. Preparation and characterization of metal-organic framework MIL-101(Cr)-coated solid-phase microextraction fiber.

    Science.gov (United States)

    Xie, Lijun; Liu, Shuqin; Han, Zhubing; Jiang, Ruifen; Liu, Hong; Zhu, Fang; Zeng, Feng; Su, Chengyong; Ouyang, Gangfeng

    2015-01-01

    Metal-organic frameworks (MOFs) have received great attention as novel sorbents due to their fascinating structures and intriguing potential applications in various fields. In this work, a MIL-101(Cr)-coated solid-phase microextraction (SPME) fiber was fabricated by a simple direct coating method and applied to the determination of volatile compounds (BTEX, benzene, toluene, ethylbenzene, m-xylene and o-xylene) and semi-volatile compounds (PAHs, polycyclic aromatic hydrocarbons) from water samples. The extraction and desorption conditions of headspace SPME (HS-SPME) were optimized. Under the optimized conditions, the established methods exhibited excellent extraction performance. Good precision (<7.7%) and low detection limits (0.32-1.7 ng L(-1) and 0.12-2.1 ng L(-1) for BTEX and PAHs, respectively) were achieved. In addition, the MIL-101(Cr)-coated fiber possessed good thermal stability, and the fiber can be reused over 150 times. The fiber was successfully applied to the analysis of BTEX and PAHs in river water by coupling with gas chromatography-mass spectrometry (GC-MS). The analytes at low concentrations (1.7 and 10 ng L(-1)) were detected, and the recoveries obtained with the spiked river water samples were in the range of 80.0-113% and 84.8-106% for BTEX and PAHs, respectively, which demonstrated the applicability of the self-made fiber. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Effects of Y2O3 precipitates on critical current anisotropy in YBa2Cu3O7 - x thin films prepared by plasma-enhanced metalorganic vapor deposition

    Science.gov (United States)

    Li, Y. Q.; Zhao, J.; Chern, C. S.; Lu, P.; Chien, T. R.; Gallois, B.; Norris, P.; Kear, B.; Cosandey, F.

    1992-05-01

    Yttrium-rich YBa2Cu3O7-x thin films containing yttria precipitates with an average size of less than 10 nm and with densities of up to 1024/m3 have been prepared by metalorganic chemical vapor deposition. The field dependence of the critical current density of the yttrium-rich films with the c-axis normal to the surface indicates that the precipitates act as effective pinning centers when the magnetic field is perpendicular to the CuO2 planes while their presence has no effect on the critical current density when the magnetic field is parallel to the CuO2 planes. In this case, intrinsic pinning of the weakly coupled CuO2 planes may be the dominant pinning mechanism in c-axis oriented YBa2Cu3O7-x thin films.

  12. Melt-Vapor Phase Diagram of the Te-S System

    Science.gov (United States)

    Volodin, V. N.; Trebukhov, S. A.; Kenzhaliyev, B. K.; Nitsenko, A. V.; Burabaeva, N. M.

    2018-03-01

    The values of partial pressure of saturated vapor of the constituents of the Te-S system are determined from boiling points. The boundaries of the melt-vapor phase transition at atmospheric pressure and in vacuum of 2000 and 100 Pa are calculated on the basis of partial pressures. A phase diagram that includes vapor-liquid equilibrium fields whose boundaries allow us to assess the behavior of elements upon distillation fractioning is plotted. It is established that the separation of elements is possible at the first evaporation-condensation cycle. Complications can be caused by crystallization of a sulfur solid solution in tellurium.

  13. DETERMINING HOW VAPOR PHASE MTBE REACHES GROUND WATER

    Science.gov (United States)

    EPA Region 2 and ORD have funded a RARE project for FY 2005/2006 to evaluate the prospects that MTBE (and other fuel components) in vapors that escape from an underground storage tank (UST) can find its way to ground water produced by monitoring wells at a gasoline filling statio...

  14. Student Understanding of Liquid-Vapor Phase Equilibrium

    Science.gov (United States)

    Boudreaux, Andrew; Campbell, Craig

    2012-01-01

    Student understanding of the equilibrium coexistence of a liquid and its vapor was the subject of an extended investigation. Written assessment questions were administered to undergraduates enrolled in introductory physics and chemistry courses. Responses have been analyzed to document conceptual and reasoning difficulties in sufficient detail to…

  15. Calculation of Liquid Water-Hydrate-Methane Vapor Phase Equilibria from Molecular Simulations

    DEFF Research Database (Denmark)

    Jensen, Lars; Thomsen, Kaj; von Solms, Nicolas

    2010-01-01

    Monte Carlo simulation methods for determining fluid- and crystal-phase chemical potentials are used for the first time to calculate liquid water-methane hydrate-methane vapor phase equilibria from knowledge of atomistic interaction potentials alone. The water and methane molecules are modeled us...

  16. Ultrafast dynamics of the acoustic vaporization of phase-change microdroplets.

    Science.gov (United States)

    Shpak, Oleksandr; Kokhuis, Tom J A; Luan, Ying; Lohse, Detlef; de Jong, Nico; Fowlkes, Brian; Fabiilli, Mario; Versluis, Michel

    2013-08-01

    Acoustically sensitive emulsions are a promising tool for medical applications such as localized drug delivery. The physical mechanisms underlying the ultrasound-triggered nucleation and subsequent vaporization of these phase-change emulsions are largely unexplored. Here, the acoustic vaporization of individual micron-sized perfluoropentane (PFP) droplets is studied at a nanoseconds timescale. Highly diluted emulsions of PFP-in-water and oil-in-PFP-in-water droplets, ranging from 3.5 to 11 μm in radius, were prepared and the nucleation and growth of the vapor bubbles was imaged at frame rates of up to 20 Mfps. The droplet vaporization dynamics was observed to have three distinct regimes: (1) prior to nucleation, a regime of droplet deformation and oscillatory translations within the surrounding fluid along the propagation direction of the applied ultrasound; (2) a regime characterized by the rapid growth of a vapor bubble enhanced by ultrasound-driven rectified heat transfer; and (3) a final phase characterized by a relatively slow expansion, after ultrasound stops, that is fully dominated by heat transfer. A method to measure the moment of inception of the nucleation event with respect to the phase of the ultrasound wave is proposed. A simple physical model captures quantitatively all of the features of the subsequent vapor bubble growth.

  17. Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

    Science.gov (United States)

    2016-09-15

    AFRL-AFOSR-VA-TR-2016-0319 Chirality-Controlled Growth of Single -Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and...controlled growth of single -wall carbon nanotubes using vapor phase epitaxy: mechanistic understanding and scalable production FA9550-14-1-0115 Zhou...controlled synthesis of single -wall carbon nanotubes. Firstly, we have successfully demonstrated a vapor-phase-epitaxy-analogous general strategy for

  18. MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

    Energy Technology Data Exchange (ETDEWEB)

    Dugger, Michael Thomas; Asay, David B.; Kim, Seong H.

    2008-01-01

    Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

  19. Development of vapor phase hydrogenation and of catalysts immune to poison (abstract)

    Energy Technology Data Exchange (ETDEWEB)

    1942-10-16

    The development of catalysts immune to poison and the development of vapor-phase hydrogenation were closely connected and they were considered together. Catalysts used at high thruputs and high partial pressures showed rapid deterioration of their activity caused by deposition and condensation of high-molecular-weight substances on the surface of the catalysts. This phenomenon made it necessary to divide hydrogenation into two phases: the liquid phase and the vapor phase. The first of the vapor-phase operating catalysts was catalyst 3510, which consisted of zinc--magnesium molybdate. Development of catalyst 5058, which consisted of pure tungsten disulfide and was produced by decomposing ammonium--sulfotungstate in H/sub 2/ atmosphere, largely terminated development of vapor-phase catalysts. Maximum activity had been obtained. Compared to 3510, two to three times as much gasoline was produced per hour with a fixed volume of catalyst, besides being able to work at a temperature about 100/sup 0/C lower, and gasification losses were considerably smaller. In order to use 5058 in mass production, the dry catalyst powder had to be compressed into cylindrical shapes 10 mm in diameter. The demands for higher antiknock gasolines in the processing of certain paraffinic raw material could not be met by 5058 because of its strong hydrogenation effect, and the dilute catalyst 6434, consisting of 90% Fullers earth treated with HF and 10% WS/sub 2/, was developed for this. 3 tables.

  20. Striped Phase of 3-Hexylthiophene Self-Assembled Monolayers on Au(1 11) Formed by Vapor Phase Deposition.

    Science.gov (United States)

    Kim, Youngwoo; Kang, Hungu; Tsunoi, Azuho; Hayashi, Tomohiro; Hara, Masahiko; Noh, Jaegeun

    2016-03-01

    The formation and surface structure of 3-hexylthiophene (HTP) self-assembled monolayers (SAMs) on Au(111) prepared by solution and ambient-pressure vapor deposition at room temperature (RT) for 24 h were examined by means of scanning tunneling microscopy (STM) and cyclic voltammetry (CV). STM imaging revealed that HTP SAMs formed by solution deposition have a disordered phase, whereas those formed by vapor deposition exhibit a striped phase with a unidirectional orientation. The distance between the rows in the striped phase was measured to be 1.3 ± 0.1 nm, and the hexyl molecular backbones of HTP in the SAMs on Au(111) are oriented parallel to the Au(111) surface with the head-to-head orientation. From this STM observation, we suggest that the formation of this striped phase in HTP SAMs prepared by vapor deposition were mainly driven by the optimization of van der Waals interactions between the hexyl chains on the surface. CV measurements also demonstrated that HTP SAMs show a high blocking efficiency for electron transfer reactions between electrolytes and the gold electrode, suggesting the formation of SAMs on Au(111) from the vapor phase. Our results obtained here will be very useful for understanding the formation and structure of HTP SAMs on Au(111) surfaces and how they are influenced by deposition method.

  1. Biodegradation of vapor-phase toluene in unsaturated porous media: Column experiments

    International Nuclear Information System (INIS)

    Khan, Ali M.; Wick, Lukas Y.; Harms, Hauke; Thullner, Martin

    2016-01-01

    Biodegradation of organic chemicals in the vapor phase of soils and vertical flow filters has gained attention as promising approach to clean up volatile organic compounds (VOC). The drivers of VOC biodegradation in unsaturated systems however still remain poorly understood. Here, we analyzed the processes controlling aerobic VOC biodegradation in a laboratory setup mimicking the unsaturated zone above a shallow aquifer. The setup allowed for diffusive vapor-phase transport and biodegradation of three VOC: non-deuterated and deuterated toluene as two compounds of highly differing biodegradability but (nearly) identical physical and chemical properties, and MTBE as (at the applied experimental conditions) non-biodegradable tracer and internal control. Our results showed for toluene an effective microbial degradation within centimeter VOC transport distances despite high gas-phase diffusivity. Degradation rates were controlled by the reactivity of the compounds while oxic conditions were found everywhere in the system. This confirms hypotheses that vadose zone biodegradation rates can be extremely high and are able to prevent the outgassing of VOC to the atmosphere within a centimeter range if compound properties and site conditions allow for sufficiently high degradation rates. - Highlights: • The column setup allows resolving vapor-phase VOC concentration gradients at cm scale resolution. • Vapor-phase and liquid-phase concentrations are measured simultaneously. • Isotopically labelled VOC was used as reference species of low biodegradability. • Biodegradation rates in the unsaturated zone can be very high and act at a cm scale. • Unsaturated material can be an effective bio-barrier avoiding biodegradable VOC emissions. - Microbial degradation activity can be sufficient to remove VOC from unsaturated porous media after a few centimeter of vapor-phase diffusive transport and mayeffectively avoid atmospheric emissions.

  2. Printing of small molecular medicines from the vapor phase.

    Science.gov (United States)

    Shalev, Olga; Raghavan, Shreya; Mazzara, J Maxwell; Senabulya, Nancy; Sinko, Patrick D; Fleck, Elyse; Rockwell, Christopher; Simopoulos, Nicholas; Jones, Christina M; Schwendeman, Anna; Mehta, Geeta; Clarke, Roy; Amidon, Gregory E; Shtein, Max

    2017-09-27

    There is growing need to develop efficient methods for early-stage drug discovery, continuous manufacturing of drug delivery vehicles, and ultra-precise dosing of high potency drugs. Here we demonstrate the use of solvent-free organic vapor jet printing to deposit nanostructured films of small molecular pharmaceutical ingredients, including caffeine, paracetamol, ibuprofen, tamoxifen, BAY 11-7082 and fluorescein, with accuracy on the scale of micrograms per square centimeter, onto glass, Tegaderm, Listerine tabs, and stainless steel microneedles. The printed films exhibit similar crystallographic order and chemistry as the original powders; controlled, order-of-magnitude enhancements of dissolution rate are observed relative to powder-form particles. In vitro treatment of breast and ovarian cancer cell cultures in aqueous media by tamoxifen and BAY 11-7082 films shows similar behavior to drugs pre-dissolved in dimethyl sulfoxide. The demonstrated precise printing of medicines as films, without the use of solvents, can accelerate drug screening and enable continuous manufacturing, while enhancing dosage accuracy.Traditional approaches used in the pharmaceutical industry are not precise or versatile enough for customized medicine formulation and manufacture. Here the authors produce a method to form coatings, with accurate dosages, as well as a means of closely controlling dissolution kinetics.

  3. Inhibition effects of vapor phase thymol and modified atmosphere against Salmonella spp. on raw shrimp

    Science.gov (United States)

    Salmonella contamination of shrimp is a food safety concern in the U.S. and other countries. Natural antimicrobial compounds (e.g. essential oils) in vapor phase and modified atmosphere (MA) technology can inhibit the growth potential of Salmonella spp. However, each strategy has its limitations, wh...

  4. Improved thermal lattice Boltzmann model for simulation of liquid-vapor phase change

    Science.gov (United States)

    Li, Qing; Zhou, P.; Yan, H. J.

    2017-12-01

    In this paper, an improved thermal lattice Boltzmann (LB) model is proposed for simulating liquid-vapor phase change, which is aimed at improving an existing thermal LB model for liquid-vapor phase change [S. Gong and P. Cheng, Int. J. Heat Mass Transfer 55, 4923 (2012), 10.1016/j.ijheatmasstransfer.2012.04.037]. First, we emphasize that the replacement of ∇ .(λ ∇ T ) /∇.(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) is an inappropriate treatment for diffuse interface modeling of liquid-vapor phase change. Furthermore, the error terms ∂t 0(T v ) +∇ .(T vv ) , which exist in the macroscopic temperature equation recovered from the previous model, are eliminated in the present model through a way that is consistent with the philosophy of the LB method. Moreover, the discrete effect of the source term is also eliminated in the present model. Numerical simulations are performed for droplet evaporation and bubble nucleation to validate the capability of the model for simulating liquid-vapor phase change. It is shown that the numerical results of the improved model agree well with those of a finite-difference scheme. Meanwhile, it is found that the replacement of ∇ .(λ ∇ T ) /∇ .(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) leads to significant numerical errors and the error terms in the recovered macroscopic temperature equation also result in considerable errors.

  5. Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

    Science.gov (United States)

    Hoshi, Takuya; Kashio, Norihide; Sugiyama, Hiroki; Yokoyama, Haruki; Kurishima, Kenji; Ida, Minoru; Matsuzaki, Hideaki

    2017-07-01

    We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. Consequently, the solid composition and hole concentration of hybrid base can be properly controlled by just modulating the supply of only TMIn and carbon tetrabromide. Secondary ion mass spectroscopy for the DHBT wafer reveals that the contents of In, Ga, and C inside the base are actually modulated from the collector side to the emitter side as expected. Transmission-line-model measurements were performed for the compositionally graded-InGaAsSb/GaAsSb hybrid base. The contact resistivity is estimated to be 5.3 Ω µm2, which is lower than half the value of a compositionally graded InGaAsSb base without the GaAsSb contact layer. The results indicate that the compositionally-graded-InGaAsSb/GaAsSb-contact hybrid base structure grown by this simple method is very advantageous for obtaining DHBTs with a very high maximum oscillation frequency.

  6. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  7. Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

    Science.gov (United States)

    Tatebayashi, J.; Yoshii, G.; Nakajima, T.; Kamei, H.; Takatsu, J.; Lebrun, D. M.; Fujiwara, Y.

    2018-04-01

    We report on the epitaxial growth and the optical properties of Tm,Yb-codoped ZnO (ZnO:Tm,Yb) thin films by sputtering-assisted metalorganic chemical vapor deposition. The characteristic light emission due to the intra-4f shell transitions of Tm3+ and Yb3+ ions in the ZnO host is observed at 4 K by using photoluminescence (PL) characterization. The time-resolved PL measurements on the Tm3+ and Yb3+ emission reveals that the carrier decay time of each ion can vary by changing the concentration of both Tm3+ and Yb3+ ions, which depends on a mixing ratio of Tm2O3 and Yb2O3 in a sputtering target. The energy transfer from Tm3+ to Yb3+ ions occurs in the sample with the high mixing ratio, and the reversed energy transfer process occurs with the lower mixing ratio. These results indicate that the concentration, and thus the carrier dynamics of Tm3+ and Yb3+ ions in the ZnO:Tm,Yb host, can be controlled by altering the mixing ratio of the sputter target and the frequency power.

  8. Development of Microwave-Excited Plasma-Enhanced Metal-Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2

    Science.gov (United States)

    Takahashi, Ichirou; Funaiwa, Kiyoshi; Azumi, Keita; Yamashita, Satoru; Shirai, Yasuyuki; Hirayama, Masaki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

    2007-04-01

    Sr2(Ta1-x,Nbx)2O7 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric-insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MOCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200 nm)/SiO2 (10 nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2 V with a 5 V writing operation.

  9. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  10. Phase relations and chemical vapor transport of hexagonal indium tungsten bronze InxWO3

    International Nuclear Information System (INIS)

    Steiner, Udo

    2014-01-01

    Highlights: • Phase relations of hexagonal bronze In x WO 3 with neighboring phases. • Chemical vapor transport experiments using NH 4 Cl as transport agent. • Single crystals of In x WO 3 up to a few mm in size were prepared. • Selective synthesis of crystals of the indium poor and indium rich phase boundary. - Abstract: Phase pure powder samples of hexagonal indium tungsten bronze In x WO 3 (x = 0.25–0.35) were synthesized by solid state reaction at 1173 K. The phase relations of In x WO 3 with neighboring binary and ternary phases were determined in the phase diagram In–W–O. Systematic chemical vapor transport experiments were carried out on source materials with compositions corresponding to miscellaneous two-phase and three-phase regions using NH 4 X (X = Cl, Br, I) as transport agent. Crystals of hexagonal indium tungsten bronze were deposited beside In 2 W 3 O 12 with composition corresponding to the indium poor phase boundary and dimensions up to a few mm in a temperature gradient 1173 K → 1073 K starting from ternary mixtures In x WO 3 /In 2 W 3 O 12 /In 0.02 WO 3 . Sole deposition of In x WO 3 single crystals with composition x ≈ 0.33 was observed from ternary mixtures In x WO 3 /W 18 O 49 /WO 2 with a migration rate of about 0.5 mg/h (transport agent NH 4 Cl)

  11. Experimental study of saturated vapor pressure and density of liquid phase of rubidium-cesium alloy

    International Nuclear Information System (INIS)

    Roshchupkin, V.V.; Pokrasin, M.A.; Chernov, A.I.

    1995-01-01

    Data of an experimental determination of rubidium-base liquid alloy density (72.4 mas.% of Rb + 27.6 mas.% of Cs), as well as of pressure of the indicated alloy saturated vapors are presented. Liquid phase density is measured by differential hydrostatic weighing method. The density measurement error at 1140 K temperature makes up 0.8%. Comparison of experimental and estimated data on the saturated vapor pressure has demonstrated a notable difference between them, which is some cases does not allow one to use data obtained by means of calculations. 4 refs.; 3 tabs

  12. Liquid and Vapor-Phase Activity of Artemisia annua Essential Oil against Pathogenic Malassezia spp.

    Science.gov (United States)

    Santomauro, Francesca; Donato, Rosa; Pini, Gabriella; Sacco, Cristiana; Ascrizzi, Roberta; Bilia, Anna Rita

    2018-02-01

    Artemisia annua essential oil has given us many encouraging results for its numerous antimicrobial properties. In this study, the essential oil, both in liquid and in vapor phases, was tested against various Malassezia species closely related to many skin disorders in humans and animals. Malassezia treatment and eradication are mainly based on old azole drugs, which are characterized by poor compliance, unpredictable clinical efficacy, emerging resistance, and several side effects. Monoterpenes (ca. 88%) represent the most abundant group of compounds in the essential oil, mainly the oxygenated derivatives (ca. 74%) with camphor (25.2%), 1,8-cineole (20%), and artemisia ketone (12.5%). In vapor phase, monoterpenes represent more than 98% of the constituents, α -pinene being the main constituent (22.8%), followed by 1,8-cineole (22.1%) and camphene (12.9%). Essential oil of A. annua , both in vapor phase and liquid, showed strong antimicrobial activity towards almost the tested twenty strains of Malassezia analyzed. The minimum fungicidal concentrations from most of the strains tested were from 0.78 µL/mL to 1.56 µL/mL, and only three strains of Malassezia sympodialis required a higher concentration of 3.125 µL/mL. Overall, the minimal inhibitor concentrations obtained by vapor diffusion assay were lower than those obtained by the liquid method. The average values of minimal inhibitor concentrations obtained by the two methods at 72 h are 1.3 - 8.0 times higher in liquid compared to those in the vapor phase. Georg Thieme Verlag KG Stuttgart · New York.

  13. Compact Raman Lidar Measurement of Liquid and Vapor Phase Water Under the Influence of Ionizing Radiation

    Directory of Open Access Journals (Sweden)

    Shiina Tatsuo

    2016-01-01

    Full Text Available A compact Raman lidar has been developed for studying phase changes of water in the atmosphere under the influence of ionization radiation. The Raman lidar is operated at the wavelength of 349 nm and backscattered Raman signals of liquid and vapor phase water are detected at 396 and 400 nm, respectively. Alpha particles emitted from 241Am of 9 MBq ionize air molecules in a scattering chamber, and the resulting ions lead to the formation of liquid water droplets. From the analysis of Raman signal intensities, it has been found that the increase in the liquid water Raman channel is approximately 3 times as much as the decrease in the vapor phase water Raman channel, which is consistent with the theoretical prediction based on the Raman cross-sections. In addition, the radius of the water droplet is estimated to be 0.2 μm.

  14. Finite size and Coulomb corrections: from nuclei to nuclear liquid vapor phase diagram

    International Nuclear Information System (INIS)

    Moretto, L.G.; Elliott, J.B.; Phair, L.

    2003-01-01

    In this paper we consider the problem of obtaining the infinite symmetric uncharged nuclear matter phase diagram from a thermal nuclear reaction. In the first part we shall consider the Coulomb interaction which, because of its long range makes the definition of phases problematic. This Coulomb effect seems truly devastating since it does not allow one to define nuclear phase transitions much above A ∼ 30. However there may be a solution to this difficulty. If we consider the emission of particles with a sizable charge, we notice that a large Coulomb barrier Bc is present. For T << Bc these channels may be considered effectively closed. Consequently the unbound channels may not play a role on a suitably short time scale. Then a phase transition may still be definable in an approximate way. In the second part of the article we shall deal with the finite size problem by means of a new method, the complement method, which shall permit a straightforward extrapolation to the infinite system. The complement approach consists of evaluating the change in free energy occurring when a particle or cluster is moved from one (finite) phase to another. In the case of a liquid drop in equilibrium with its vapor, this is done by extracting a vapor particle of any given size from the drop and evaluating the energy and entropy changes associated with both the vapor particle and the residual liquid drop (complement)

  15. Liquid-phase and vapor-phase dehydration of organic/water solutions

    Science.gov (United States)

    Huang, Yu [Palo Alto, CA; Ly, Jennifer [San Jose, CA; Aldajani, Tiem [San Jose, CA; Baker, Richard W [Palo Alto, CA

    2011-08-23

    Processes for dehydrating an organic/water solution by pervaporation or vapor separation using fluorinated membranes. The processes are particularly useful for treating mixtures containing light organic components, such as ethanol, isopropanol or acetic acid.

  16. Separation by transportation in vapor phase of stainless steels components

    International Nuclear Information System (INIS)

    Allibert, M.; Gibon, G.; Kurka, G.; Tanis, G.

    1987-01-01

    A procedure for separating cobalt from other constituents of radioactive stainless steel is proposed in order to condition material originating from dismantling of reactor pressure vessels. The procedure is based on the transport in the vapour phase, under the presence of an appropriate carrier gas and a thermal gradient in a sealed device. By calculation, iodine was found to be the most appropriate carrier gas. Tests carried out at 50 mg to 2 g scale in quartz ampoules permitted to determine parameters, i.e. temperature range and gradient, pressure, and the effectiveness. It was shown that steel turnings may be treated efficiently. The procedure achieves well a partition of stainless steel into two metal masses: one containing the bulk of cobalt and radioactivity, the other depleted of cobalt and suitable for recycling. There is few or no secondary waste created, but the costs of the procedure are estimated to be high, i.e. between 100 and 1,000 ECU/kg [fr

  17. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Tomas, M.C.; Zuniga-Perez, J.; Munoz-Sanjose, V. [Departament de Fisica Aplicada i Electromagnetisme, Valencia (Spain); Vennegues, P.; Tottereau, O. [Centre National de la Recherche Scientifique, Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, Valbonne (France)

    2007-07-15

    In the frame of studying II-VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature. (orig.)

  18. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Martinez-Tomas, M.C.; Zuniga-Perez, J.; Munoz-Sanjose, V.; Vennegues, P.; Tottereau, O.

    2007-01-01

    In the frame of studying II-VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature. (orig.)

  19. Cadmium(II)-based metal-organic nanotubes as solid-phase microextraction coating for ultratrace-level analysis of polychlorinated biphenyls in seawater samples.

    Science.gov (United States)

    Sheng, Wan-Ru; Chen, Yue; Wang, Shan-Shan; Wang, Xiao-Li; Wang, Ming-Lin; Zhao, Ru-Song

    2016-11-01

    In this study, stable cadmium(II)-based metal-organic nanotubes (Cd-MONTs) were prepared and used as a coating material for solid-phase microextraction (SPME) of polychlorinated biphenyls (PCBs) from environmental water samples. The as-prepared Cd-MONT SPME coating material was characterized by thermal gravimetric analysis, scanning electron microscopy, and X-ray diffraction. The synthesized Cd-MONTs exhibited high thermal stability (385 °C) and excellent extraction performance toward PCBs. The important conditions were optimized systematically by the response surface method. Under the optimal conditions, the new fiber achieved high enrichment factors (938-3417), low limits of detection (1.80-8.73 pg L -1 ), and wide linearity (10-5000 pg L -1 ). The method developed was used in ultratrace-level analysis of PCBs in seawater samples, with satisfactory results for each sample.

  20. Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

    Science.gov (United States)

    Liu, Jinxuan; Shekhah, Osama; Stammer, Xia; Arslan, Hasan K.; Liu, Bo; Schüpbach, Björn; Terfort, Andreas; Wöll, Christof

    2012-01-01

    The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4’-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

  1. Deposition of metal-organic frameworks by liquid-phase epitaxy: The influence of substrate functional group density on film orientation

    KAUST Repository

    Liu, J.

    2012-09-05

    The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4\\'-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

  2. Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

    Directory of Open Access Journals (Sweden)

    Christof Wöll

    2012-09-01

    Full Text Available The liquid phase epitaxy (LPE of the metal-organic framework (MOF HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA, 4’-carboxyterphenyl-4-methanethiol (TPMTA and 9-carboxy-10-(mercaptomethyltriptycene (CMMT. The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100 direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111 direction.

  3. Phase equilibrium liquid-vapor in three-component system UF6-IF5-BrF3 at complete mutual components solubility

    OpenAIRE

    Zherin, Ivan Ignatyevich; Usov, V. F.; Ostvald, R. V.; Shagalov, V. V.; Gayday, I. V.; Tyulyubaev, Z. M.

    2007-01-01

    The results of studying phase equilibrium liquid-vapor at 353,15 K in the system of uranium hexafluoride, iodine pentafluoride, bromine trifluoride have been presented. The dependences of saturated vapor pressure on condensed phase composition, the results of analysis of studied system deviation from error-free behavior, the data on equilibrium vapor phase are given

  4. Chirality-Dependent Vapor-Phase Epitaxial Growth and Termination of Single-Wall Carbon Nanotubes

    Science.gov (United States)

    Liu, Bilu; Liu, Jia; Zhou, Chongwu; USC nanolab Team

    2014-03-01

    Chirality-pure single-wall carbon nanotubes are highly desired for both fundamental study and many of their technological applications. Recently, we have shown that chirality-pure short nanotubes can be used as seeds for vapor-phase epitaxial cloning growth, opening up a new route toward chirality-controlled carbon nanotube synthesis. Nevertheless, the yield of vapor-phase epitaxial growth is rather limited at the present stage, due to the lack of mechanistic understanding of the process. Here we report chirality-dependent growth kinetics and termination mechanism for the vapor-phase epitaxial growth of seven single- chirality nanotubes of (9, 1), (6, 5), (8, 3), (7, 6), (10, 2), (6, 6), and (7, 7), covering near zigzag, medium chiral angle, and near armchair semiconductors, as well as armchair metallic nanotubes. Our results reveal that the growth rates of nanotubes increase with their chiral angles while the active lifetimes of the growth hold opposite trend. Consequently, the chirality distribution of a nanotube ensemble is jointly determined by both growth rates and lifetimes. These results correlate nanotube structures and properties with their growth behaviors and deepen our understanding of chirality-controlled growth of nanotubes.

  5. Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

    NARCIS (Netherlands)

    Bohnen, T.

    2010-01-01

    Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III

  6. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  7. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    International Nuclear Information System (INIS)

    Chen, Jr-Tai; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik

    2015-01-01

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H 2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm 2 /V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10 20  cm −3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm 2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer

  8. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    Science.gov (United States)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  9. High flux diode packaging using passive microscale liquid-vapor phase change

    Science.gov (United States)

    Bandhauer, Todd; Deri, Robert J.; Elmer, John W.; Kotovsky, Jack; Patra, Susant

    2017-09-19

    A laser diode package includes a heat pipe having a fluid chamber enclosed in part by a heat exchange wall for containing a fluid. Wicking channels in the fluid chamber is adapted to wick a liquid phase of the fluid from a condensing section of the heat pipe to an evaporating section of the heat exchanger, and a laser diode is connected to the heat exchange wall at the evaporating section of the heat exchanger so that heat produced by the laser diode is removed isothermally from the evaporating section to the condensing section by a liquid-to-vapor phase change of the fluid.

  10. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Kundu, Souvik [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2015-01-05

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

  11. Covalent Bonding of Metal-Organic Framework-5/Graphene Oxide Hybrid Composite to Stainless Steel Fiber for Solid-Phase Microextraction of Triazole Fungicides from Fruit and Vegetable Samples.

    Science.gov (United States)

    Zhang, Shuaihua; Yang, Qian; Wang, Wenchang; Wang, Chun; Wang, Zhi

    2016-04-06

    A hybrid material of the zinc-based metal-organic framework-5 and graphene oxide (metal-organic framework-5/graphene oxide) was prepared as a novel fiber coating material for solid-phase microextraction (SPME). The SPME fibers were fabricated by covalent bonding via chemical cross-linking between the coating material metal-organic framework-5/graphene oxide and stainless steel wire. The prepared fiber was used for the extraction of five triazole fungicides from fruit and vegetable samples. Gas chromatography coupled with microelectron capture detector (GC-μECD) was used for quantification. The developed method gave a low limit of detection (0.05-1.58 ng g(-1)) and good linearity (0.17-100 ng g(-1)) for the determination of the triazole fungicides in fruit and vegetable samples. The relative standard deviations (RSDs) for five replicate extractions of the triazole fungicides ranged from 3.7 to 8.9%. The method recoveries for spiked fungicides (5, 20, and 50 ng g(-1)) in grape, apple, cucumber, celery cabbage, pear, cabbage, and tomato samples were in the range of 85.6-105.8% with the RSDs ranging from 3.6 to 11.4%, respectively, depending on both the analytes and samples. The metal-organic framework-5/graphene oxide coated fiber was stable enough for 120 extraction cycles without a significant loss of extraction efficiency. The method was suitable for the determination of triazole fungicides in fruit and vegetable samples.

  12. The mechanism of vapor phase hydration of calcium oxide: implications for CO2 capture.

    Science.gov (United States)

    Kudłacz, Krzysztof; Rodriguez-Navarro, Carlos

    2014-10-21

    Lime-based sorbents are used for fuel- and flue-gas capture, thereby representing an economic and effective way to reduce CO2 emissions. Their use involves cyclic carbonation/calcination which results in a significant conversion reduction with increasing number of cycles. To reactivate spent CaO, vapor phase hydration is typically performed. However, little is known about the ultimate mechanism of such a hydration process. Here, we show that the vapor phase hydration of CaO formed after calcination of calcite (CaCO3) single crystals is a pseudomorphic, topotactic process, which progresses via an intermediate disordered phase prior to the final formation of oriented Ca(OH)2 nanocrystals. The strong structural control during this solid-state phase transition implies that the microstructural features of the CaO parent phase predetermine the final structural and physicochemical (reactivity and attrition) features of the product hydroxide. The higher molar volume of the product can create an impervious shell around unreacted CaO, thereby limiting the efficiency of the reactivation process. However, in the case of compact, sintered CaO structures, volume expansion cannot be accommodated in the reduced pore volume, and stress generation leads to pervasive cracking. This favors complete hydration but also detrimental attrition. Implications of these results in carbon capture and storage (CCS) are discussed.

  13. Evaporation and Condensation Flows of a Vapor-Gas Mixture from or onto the Condensed Phase with an Internal Structure

    National Research Council Canada - National Science Library

    Onishi, Yoshimoto; Yamada, Ken

    2005-01-01

    Transient motions of a vapor-gas mixture due to the evaporation and condensation processes from or onto the plane condensed phase, with a temperature field as its internal structure, have been studied...

  14. Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Liu, Changran; Camacho, Joaquin; Wang, Hai

    2018-01-19

    Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Direct Adsorption and Molecular Self-Assembly of Octylthioacetates on Au(111) in the Vapor Phase

    International Nuclear Information System (INIS)

    Park, Tae Sung; Kang, Hun Gu; Kim, You Young; Lee, Seong Keun; Noh, Jae Geun

    2011-01-01

    We demonstrate that the direct adsorption of OTA on Au(111) in ethanol solution led to the formation of a disordered phase, whereas OTA SAMs grown from the vapor phase have an ordered 5 Χ √3 striped phase. Thus, vapor deposition was found to be a more effective technique, as compared to solution deposition, for improving the structural order of SAMs by direct adsorption of thioacetates on gold. Organic thiols are prone to easily oxidize to disulfides or other oxidized species that can affect the formation and structure of SAMs. The presence of disulfides or oxidized compounds in thiol samples often yields poorly ordered SAMs containing a high defect density and disordered phases. An approach that minimizes undesirable thiol oxidation is the use of a protected thiol that is deprotected in situ before or during SAM formation. The protection of thiol groups can be readily accomplished by acetylation. SAMs derived from acetyl protected thiols (thioacetates) on gold have usually been formed via an in situ deprotection process of the acetyl group in strong acidic or basic solutions. Other deprotection techniques have also been developed that use organic compounds such as triethylamine, tetrabutylammonium cyanide, and 1,8-diazabicyclo[5.4.0]undec-7-ene, and organic SAMs with a high degree of structural order have been successfully constructed in solutions containing these deprotection reagents

  16. Phase-field model of vapor-liquid-solid nanowire growth

    Science.gov (United States)

    Wang, Nan; Upmanyu, Moneesh; Karma, Alain

    2018-03-01

    We present a multiphase-field model to describe quantitatively nanowire growth by the vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three nonconserved order parameters that distinguish the vapor, liquid, and solid phases and describe the energetic properties of various interfaces, including arbitrary forms of anisotropic γ plots for the solid-vapor and solid-liquid interfaces. The evolution equations for those order parameters describe basic kinetic processes including the rapid (quasi-instantaneous) equilibration of the liquid catalyst to a droplet shape with constant mean curvature, the slow incorporation of growth atoms at the droplet surface, and crystallization within the droplet. The standard constraint that the sum of the phase fields equals unity and the conservation of the number of catalyst atoms, which relates the catalyst volume to the concentration of growth atoms inside the droplet, are handled via separate Lagrange multipliers. An analysis of the model is presented that rigorously maps the phase-field equations to a desired set of sharp-interface equations for the evolution of the phase boundaries under the constraint of force balance at three-phase junctions (triple points) given by the Young-Herring relation that includes torque term related to the anisotropy of the solid-liquid and solid-vapor interface excess free energies. Numerical examples of growth in two dimensions are presented for the simplest case of vanishing crystalline anisotropy and the more realistic case of a solid-liquid γ plot with cusped minima corresponding to two sets of (10 ) and (11 ) facets. The simulations reproduce many of the salient features of nanowire growth observed experimentally, including growth normal to the substrate with tapering of the side walls, transitions between different growth orientations, and crawling growth along the substrate. They also reproduce different observed relationships between the nanowire growth

  17. Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy

    Science.gov (United States)

    Lee, R. T.; Shurtleff, J. K.; Fetzer, C. M.; Stringfellow, G. B.; Lee, S.; Seong, T. Y.

    2000-04-01

    The effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown by organometallic vapor phase epitaxy. Dramatic changes in the optical and electrical properties of GaInP with CuPt ordering have been observed. A small concentration of triethylantimony (TESb) in the vapor is found to cause Sb to accumulate at the surface. In situ surface photoabsorption analysis indicates that Sb changes the surface bonding by replacing the [1¯10] P dimers that are responsible for the formation of the CuPt structure during growth with [1¯10] Sb dimers. As a result, the degree of order for the GaInP layers is decreased, as shown by transmission electron diffraction studies. The 20 K photoluminescence spectra show a 131 meV peak energy increase for GaInP layers grown on vicinal substrates when a small amount of Sb [Sb/P(v)=4×10-4] is added to the system during growth. The use of surfactants to control specific properties of materials is expected to be a powerful tool for producing complex structures. In this article, the growth of heterostructures by modulating the Sb concentration in the vapor is demonstrated.

  18. Biodegradation of vapor-phase toluene in unsaturated porous media: Column experiments.

    Science.gov (United States)

    Khan, Ali M; Wick, Lukas Y; Harms, Hauke; Thullner, Martin

    2016-04-01

    Biodegradation of organic chemicals in the vapor phase of soils and vertical flow filters has gained attention as promising approach to clean up volatile organic compounds (VOC). The drivers of VOC biodegradation in unsaturated systems however still remain poorly understood. Here, we analyzed the processes controlling aerobic VOC biodegradation in a laboratory setup mimicking the unsaturated zone above a shallow aquifer. The setup allowed for diffusive vapor-phase transport and biodegradation of three VOC: non-deuterated and deuterated toluene as two compounds of highly differing biodegradability but (nearly) identical physical and chemical properties, and MTBE as (at the applied experimental conditions) non-biodegradable tracer and internal control. Our results showed for toluene an effective microbial degradation within centimeter VOC transport distances despite high gas-phase diffusivity. Degradation rates were controlled by the reactivity of the compounds while oxic conditions were found everywhere in the system. This confirms hypotheses that vadose zone biodegradation rates can be extremely high and are able to prevent the outgassing of VOC to the atmosphere within a centimeter range if compound properties and site conditions allow for sufficiently high degradation rates. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Organic vapor phase composition of sidestream and environmental tobacco smoke from cigarettes

    International Nuclear Information System (INIS)

    Higgins, C.E.; Jenkins, R.A.; Guerin, M.R.

    1987-01-01

    Environmental tobacco smoke (ETS) has received considerable attention because of its contribution to indoor air pollution. While some studies have attempted to estimate the exposure of humans to ETS constituents by extrapolating from information gleaned from investigations of sidestream smoke (SS), few studies have reported a direct comparison between the composition of SS and that of ETS. In the study reported here, the authors describe the relative compositional similarities and differences between the vapor phase of SS and that of ETS. SS was generated under different conditions. Both a new laminar flow chamber, which prevents significant alteration of the near-cigarette environment, and a modified Neurath chamber were used for SS generation. ETS samples were collected from an office environment. Vapor phase samples were collected on multi-media resin sorbent traps and analyzed using thermal desorption gas/liquid chromatography employing flame ionization, nitrogen-specific, and mass selective detection. Influences on the compositional profiles by the manner in which the SS is generated are described, as well as the differences between SS and ETS composition resulting from phase transition

  20. Vapor-phase synthesis and characterization of ZnSe nanoparticles

    Science.gov (United States)

    Sarigiannis, D.; Pawlowski, R. P.; Peck, J. D.; Mountziaris, T. J.; Kioseoglou, G.; Petrou, A.

    2002-06-01

    Compound semiconductor nanoparticles are an exciting class of materials whose unique optical and electronic properties can be exploited in a variety of applications, including optoelectronics, photovoltaics, and biophotonics. The most common route for synthesizing such nanoparticles has been via liquid-phase chemistry in reverse micelles. This paper discusses a flexible vapor-phase technique for synthesis of crystalline compound semiconductor nanoparticles using gas-phase condensation reactions near the stagnation point of a counterflow jet reactor. ZnSe nanoparticles were formed by reacting vapors of dimethylzinc: triethylamine adduct and hydrogen selenide at 120Torr and room temperature (28°C). No attempt was made to passivate the surface of the particles, which were collected as random aggregates on silicon wafers or TEM grids placed downstream of the reaction zone. Particle characterization using TEM, electron diffraction, Raman and EDAX revealed that the aggregates consisted of polycrystalline ZnSe nanoparticles, almost monodisperse in size (with diameters of ~40nm). The polycrystalline nanoparticles appear to have been formed by coagulation of smaller single-crystalline nanoparticles with characteristic size of 3-5 run.

  1. System Model of Heat and Mass Transfer Process for Mobile Solvent Vapor Phase Drying Equipment

    Directory of Open Access Journals (Sweden)

    Shiwei Zhang

    2014-01-01

    Full Text Available The solvent vapor phase drying process is one of the most important processes during the production and maintenance for large oil-immersed power transformer. In this paper, the working principle, system composition, and technological process of mobile solvent vapor phase drying (MVPD equipment for transformer are introduced in detail. On the basis of necessary simplification and assumption for MVPD equipment and process, a heat and mass transfer mathematical model including 40 mathematical equations is established, which represents completely thermodynamics laws of phase change and transport process of solvent, water, and air in MVPD technological processes and describes in detail the quantitative relationship among important physical quantities such as temperature, pressure, and flux in key equipment units and process. Taking a practical field drying process of 500 KV/750 MVA power transformer as an example, the simulation calculation of a complete technological process is carried out by programming with MATLAB software and some relation curves of key process parameters changing with time are obtained such as body temperature, tank pressure, and water yield. The change trend of theoretical simulation results is very consistent with the actual production record data which verifies the correctness of mathematical model established.

  2. Energetically deep defect centers in vapor-phase grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Frank, T.; Pensl, G. [University of Erlangen-Nuernberg, Institute of Applied Physics, Erlangen (Germany); Tena-Zaera, R. [LCMTR, Institut des Sciences Chimiques Seine Amont, CNRS, Thiais (France); Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Universitat de Valencia, Dpto. Fisica Aplicada i Electromagnetisme, Burjassot (Spain); Ohshima, T.; Itoh, H. [Japan Atomic Energy Research Institute, Gunma (Japan); Hofmann, D.; Pfisterer, D.; Sann, J.; Meyer, B. [Justus-Liebig-Universitaet, I. Physikalisches Institut, Giessen (Germany)

    2007-07-15

    Vapor-phase grown ZnO crystals were investigated by means of DLTS measurements. The generation of defect center E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or only the Zn-lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished. DLTS investigations of ZnO samples under illumination give evidence that E4 is a negative-U center. (orig.)

  3. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  4. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  5. Modelling and simulation of liquid-vapor phase transition in compressible flows based on thermodynamical equilibrium

    International Nuclear Information System (INIS)

    Faccanoni, Gloria; Kokh, Samuel; Allaire, Gregoire

    2012-01-01

    In the present work we investigate the numerical simulation of liquid-vapor phase change in compressible flows. Each phase is modeled as a compressible fluid equipped with its own equation of state (EOS). We suppose that inter-phase equilibrium processes in the medium operate at a short time-scale compared to the other physical phenomena such as convection or thermal diffusion. This assumption provides an implicit definition of an equilibrium EOS for the two-phase medium. Within this framework, mass transfer is the result of local and instantaneous equilibria between both phases. The overall model is strictly hyperbolic. We examine properties of the equilibrium EOS and we propose a discretization strategy based on a finite-volume relaxation method. This method allows to cope with the implicit definition of the equilibrium EOS, even when the model involves complex EOS's for the pure phases. We present two-dimensional numerical simulations that shows that the model is able to reproduce mechanism such as phase disappearance and nucleation. (authors)

  6. The compositional, structural, and magnetic properties of a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhonghua; Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Mingxiang [Department of Physics, Southeast University, Nanjing 210096 (China); Wang, Wei; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN hetero-structure has been fabricated by MOCVD successfully. • The formation mechanism of different layers in sample was revealed in details. • The properties of the hetero-structure have been presented and discussed extensively. • The effect of Ga diffusion on the magnetic properties of Fe{sub 3}O{sub 4} film has been shown. - Abstract: In this article, the authors have designed and fabricated a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure by metal-organic chemical vapor deposition. The compositional, structural, and magnetic properties of the hetero-structure have been characterized and discussed. From the characterizations, the hetero-structure has been successfully grown generally. However, due to the unintentional diffusion of Ga ions from Ga{sub 2}O{sub 3}/GaN layers, the most part of the nominal Fe{sub 3}O{sub 4} layer is actually in the form of Ga{sub x}Fe{sub 3−x}O{sub 4} with gradually decreased x values from the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3} interface to the Fe{sub 3}O{sub 4} surface. Post-annealing process can further aggravate the diffusion. Due to the similar ionic radius of Ga and Fe, the structural configuration of the Ga{sub x}Fe{sub 3−x}O{sub 4} does not differ from that of pure Fe{sub 3}O{sub 4}. However, the ferromagnetism has been reduced with the incorporation of Ga into Fe{sub 3}O{sub 4}, which has been explained by the increased Yafet-Kittel angles in presence of considerable amount of Ga incorporation. A different behavior of the magnetoresistance has been found on the as-grown and annealed samples, which could be modelled and explained by the competition between the spin-dependent and spin-independent conduction channels. This work has provided detailed information on the interfacial properties of the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure, which is the solid basis for further improvement and application of

  7. Impact of Liquid-Vapor to Liquid-Liquid-Vapor Phase Transitions on Asphaltene-Rich Nanoaggregate Behavior in Athabasca Vacuum Residue + Pentane Mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Long, Bingwen; Chodakowski, Martin; Shaw, John M. [Alberta; (Beijing U)

    2013-06-05

    The bulk phase behavior of heavy oil + alkane mixtures and the behavior of the asphaltenes that they contain are topics of importance for the design and optimization of processes for petroleum production, transport, and refining and for performing routine saturates, aromatics, resins, and asphaltenes (SARA) analyses. In prior studies, partial phase diagrams and phase behavior models for Athabasca vacuum residue (AVR) comprising 32 wt % pentane asphaltenes + n-alkanes were reported. For mixtures with pentane, observed phase behaviors included single-phase liquid as well as liquid–liquid, liquid–liquid–vapor, and liquid–liquid–liquid–vapor regions. Dispersed solids were detected under some conditions as well but not quantified. In this work, small-angle X-ray scattering (SAXS) is used to study nanostructured materials in liquid phases present in AVR + n-pentane mixtures from 50 to 170 °C at mixture bubble pressure. The investigation focuses on the impact of the transition from a single AVR-rich liquid to co-existing pentane-rich and AVR-rich liquids on the nanostructure and the nanostructures most resistant to aggregation as the pentane composition axis is approached. Background scattering subtraction was performed using global mixture composition. The robustness of this assumption with respect to values obtained for coefficients appearing in a two level Beaucage unified equation fit is demonstrated. The nanostructured material is shown to arise at two length scales from 1 to 100 wt % AVR. Smaller nanostructures possess mean radii less than 50 Å, while the larger nanostructures possess mean radii greater than 250 Å. The addition of pentane to the AVR causes an increasingly large fraction of the large and small nanostructures to grow in size. Only nanostructures resistant to aggregation remain in the pentane-rich phase as the 0 wt % AVR axis is approached. Step changes in aggregation identified from changes in average radius of gyration, scattering

  8. Preparation of silver thin films using liquid-phase precursors by metal organic chemical vapor deposition and their conversion to silver selenide films by selenium vapor deposition

    International Nuclear Information System (INIS)

    Kim, Hong-Ki; Jeong, Han-Cheol; Kim, Kyung Soo; Yoon, Seok Hwan; Lee, Seung Soo; Seo, Kook Won; Shim, Il-Wun

    2005-01-01

    A series of new Ag precursors containing β-diketonate and neutral phosphite ligands were synthesized and characterized by various spectroscopic methods. These volatile precursors in liquid phase were thermally stable and quite useful in the preparation of silver thin films through bubbler-type chemical vapor deposition (CVD). In a typical case of silver (I) 1,1,1-trifluoro-2,4-pentanedionate triethyl phosphite adduct ((tfac)AgP(OEt) 3 ) precursor, very pure silver thin films were obtained under relatively mild conditions without any appreciable amount of F, O, and P impurities. These thin films were easily converted to β-orthorhombic silver selenide by simple selenium vapor deposition method. In scanning electron microscopic analyses, the average particle size of the latter was found to increase to about 1.26 μm after gas-phase selenization reaction

  9. The influence of temperature on the polymerization of ethyl cyanoacrylate from the vapor phase

    Energy Technology Data Exchange (ETDEWEB)

    Dadmun, Mark D [ORNL; Algaier, Dana [University of Tennessee, Knoxville (UTK); Baskaran, Durairaj [University of Tennessee, Knoxville (UTK)

    2011-01-01

    The polymerization of ethyl cyanoacrylate fumes from surface bound initiators is an important step in many novel and mature technologies. Understanding the effect of temperature on the rate of poly(ethyl cyanoacrylate) (PECA) growth and its molecular weight during its polymerization from the vapor phase from surface bound initiators provides insight into the important mechanistic aspects that impact the polymerizations success. In these studies, it is shown that the amount of PECA formed during the polymerization of ECA from a latent fingerprint increases with decreasing temperature, while the polymer molecular weight varies little. This is interpreted to be the result of the loosening of the ion pair that initiates the polymer chain growth and resides on the end of the growing polymer chain with decreasing temperature. Comparison of temperature effects and counter-ion studies show that in both cases loosening the ion pair results in the formation of more polymer with similar molecular weight, verifying this interpretation. These results further suggest that lowering the temperature may be an effective method to optimize anionic vapor phase polymerizations, including the improvement of the quality of aged latent prints and preliminary results are presented that substantiate this prediction.

  10. Controlling interfacial film formation in mixed polymer-surfactant systems by changing the vapor phase.

    Science.gov (United States)

    Mokhtari, Tahereh; Pham, Quoc Dat; Hirst, Christopher; O'Driscoll, Benjamin M D; Nylander, Tommy; Edler, Karen J; Sparr, Emma

    2014-08-26

    Here we show that transport-generated phase separation at the air-liquid interface in systems containing self-assembling amphiphilic molecules and polymers can be controlled by the relative humidity (RH) of the air. We also show that our observations can be described quantitatively with a theoretical model describing interfacial phase separation in a water gradient that we published previously. These phenomena arises from the fact that the water chemical potential corresponding to the ambient RH will, in general, not match the water chemical potential in the open aqueous solution. This implies nonequilibrium conditions at the air-water interface, which in turn can have consequences on the molecular organization in this layer. The experimental setup is such that we can control the boundary conditions in RH and thereby verify the predictions from the theoretical model. The polymer-surfactant systems studied here are composed of polyethylenimine (PEI) and hexadecyltrimethylammonium bromide (CTAB) or didecyldimethylammonium bromide (DDAB). Grazing-incidence small-angle X-ray scattering results show that interfacial phases with hexagonal or lamellar structure form at the interface of dilute polymer-surfactant micellar solutions. From spectroscopic ellipsometry data we conclude that variations in RH can be used to control the growth of micrometer-thick interfacial films and that reducing RH leads to thicker films. For the CTAB-PEI system, we compare the phase behavior of the interfacial phase to the equilibrium bulk phase behavior. The interfacial film resembles the bulk phases formed at high surfactant to polymer ratio and reduced water contents, and this can be used to predict the composition of interfacial phase. We also show that convection in the vapor phase strongly reduces film formation, likely due to reduction of the unstirred layer, where diffusive transport is dominating.

  11. A novel dispersive solid-phase extraction method using metal-organic framework MIL-101 as the adsorbent for the analysis of benzophenones in toner.

    Science.gov (United States)

    Li, Ning; Zhu, Quanfei; Yang, Yang; Huang, Jianlin; Dang, Xueping; Chen, Huaixia

    2015-01-01

    Metal-organic frameworks (MOFs) have been paid widespread attention in the field of adsorption and separation materials due to its porosity, large specific surface area, unsaturated metal-ligand sites and structural diversity. In this study, the green powder MIL-101 was synthesized and used for the extraction of benzophenone, 2,4-dihydroxybenzophenone and 2-hydroxy-4-methoxy-benzophenone from toner samples for the first time. The synthesized MIL-101 was characterized by X-ray diffraction, scanning electron microscopy, thermogravimetry and nitrogen adsorption porosimetry. The MIL-101 was applied as the dispersive solid phase extraction (DSPE) adsorbent for the extraction and preconcentration of benzophenone, 2,4-dihydroxybenzophenone and 2-hydroxy-4-methoxy-benzophenone from toner samples. The extraction conditions were investigated. Under the optimized conditions, a DSPE-HPLC method for the determination of benzophenone, 2,4-dihydroxybenzophenone and 2-hydroxy-4-methoxy-benzophenone was developed. The method yielded a linear calibration curve in the concentration ranges from 4.0 to 3500 μg L(-1) for the three analytes in toner samples with regression coefficients (r(2)) of 0.9992, 0.9999 and 0.9990, respectively. Limits of detection were 1.2, 1.2 and 0.9 μg L(-1), respectively. Both the intra-day and inter-day precisions (RSDs) were <10%. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

    2005-02-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Oriented circular dichroism analysis of chiral surface-anchored metal-organic frameworks grown by liquid-phase epitaxy and upon loading with chiral guest compounds

    KAUST Repository

    Gu, Zhigang

    2014-06-17

    Oriented circular dichroism (OCD) is explored and successfully applied to investigate chiral surface-anchored metal-organic frameworks (SURMOFs) based on camphoric acid (D- and Lcam) with the composition [Cu2(Dcam) 2x(Lcam)2-2x(dabco)]n (dabco=1,4-diazabicyclo- [2.2.2]-octane). The three-dimensional chiral SURMOFs with high-quality orientation were grown on quartz glass plates by using a layer-by-layer liquid-phase epitaxy method. The growth orientation, as determined by X-ray diffraction (XRD), could be switched between the [001] and [110] direction by using either OH- or COOH-terminated substrates. These SURMOFs were characterized by using OCD, which confirmed the ratio as well as the orientation of the enantiomeric linker molecules. Theoretical computations demonstrate that the OCD band intensities of the enantiopure [Cu2(Dcam)2(dabco)] n grown in different orientations are a direct result of the anisotropic nature of the chiral SURMOFs. Finally, the enantiopure [Cu 2(Dcam)2(dabco)]n and [Cu2(Lcam) 2(dabco)]n SURMOFs were loaded with the two chiral forms of ethyl lactate [(+)-ethyl-D-lactate and (-)-ethyl-L-lactate)]. An enantioselective enrichment of >60 % was observed by OCD when the chiral host scaffold was loaded from the racemic mixture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Fiber Optic Microcantilever Sensor Coupled with Reactive Polymers for Vapor Phase Detection of Ammonia, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations proposes to adapt its current aqueous-based, fiber-optic microcantilever sensor technology for real-time, monitoring of ammonia in air. Phase I...

  15. APTS and rGO co-functionalized pyrenated fluorescent nanonets for representative vapor phase nitroaromatic explosive detection

    Science.gov (United States)

    Guo, Linjuan; Zu, Baiyi; Yang, Zheng; Cao, Hongyu; Zheng, Xuefang; Dou, Xincun

    2014-01-01

    For the first time, flexible PVP/pyrene/APTS/rGO fluorescent nanonets were designed and synthesized via a one-step electrospinning method to detect representative subsaturated nitroaromatic explosive vapor. The functional fluorescent nanonets, which were highly stable in air, showed an 81% quenching efficiency towards TNT vapor (~10 ppb) with an exposure time of 540 s at room temperature. The nice performance of the nanonets was ascribed to the synergistic effects induced by the specific adsorption properties of APTS, the fast charge transfer properties and the effective π-π interaction with pyrene and TNT of rGO. Compared to the analogues of TNT, the PVP/pyrene/APTS/rGO nanonets showed notable selectivity towards TNT and DNT vapors. The explored functionalization method opens up brand new insight into sensitive and selective detection of vapor phase nitroaromatic explosives.For the first time, flexible PVP/pyrene/APTS/rGO fluorescent nanonets were designed and synthesized via a one-step electrospinning method to detect representative subsaturated nitroaromatic explosive vapor. The functional fluorescent nanonets, which were highly stable in air, showed an 81% quenching efficiency towards TNT vapor (~10 ppb) with an exposure time of 540 s at room temperature. The nice performance of the nanonets was ascribed to the synergistic effects induced by the specific adsorption properties of APTS, the fast charge transfer properties and the effective π-π interaction with pyrene and TNT of rGO. Compared to the analogues of TNT, the PVP/pyrene/APTS/rGO nanonets showed notable selectivity towards TNT and DNT vapors. The explored functionalization method opens up brand new insight into sensitive and selective detection of vapor phase nitroaromatic explosives. Electronic supplementary information (ESI) available: Vapor pressure of TNT and its analogues, fluorescence quenching kinetics, fluorescence quenching efficiencies and additional SEM images. See DOI: 10.1039/c3nr04960d

  16. Triple sorbent thermal desorption/gas chromatography/mass spectrometry determination of vapor phase organic contaminants

    International Nuclear Information System (INIS)

    Ma, C.Y.; Skeen, J.T.; Dindal, A.B.; Higgins, C.E.; Jenkins, R.A.

    1994-05-01

    A thermal desorption/ps chromatography/mass spectrometry (TD/GC/MS) has been evaluated for the determination of volatile organic compounds (VOCS) in vapor phase samples using Carbosieve S-III/Carbotrap/Carotrap C triple sorbent traps (TST) similar to those available from a commercial source. The analysis was carried out with a Hewlett-Packard 5985A or 5995 GC/MS system with a modified injector to adapt an inhouse manufactured short-path desorber for transferring desorbate directly onto a cryofocusing loop for subsequent GC/MS analysis. Vapor phase standards generated from twenty six compounds were used for method validation, including alkanes, alkyl alcohols, alkyl ketones, and alkyl nitrites, a group of representative compounds that have previously been identified in a target airborne matrix. The method was validated based on the satisfactory results in terms of reproducibility, recovery rate, stability, and linearity. A relative, standard deviation of 0.55 to 24.3 % was obtained for the entire TD process (generation of gas phase standards, spiking the standards on and desorbing from TST) over a concentration range of 20 to 500 ng/trap. Linear correlation coefficients for the calibration curves as determined ranged from 0.81 to 0.99 and limits of detection ranged from 3 to 76 ng. For a majority of standards, recoveries of greater than 90% were observed. For three selected standards spiked on TSTS, minimal loss (10 to 22%) was observed after storing the spiked in, a 4 degree C refrigerator for 29 days. The only chromatographable artifact observed was a 5% conversion of isopropanol to acetone. The validated method been successfully applied, to the determination of VOCs collected from various emission sources in a diversified concentration range

  17. Triple sorbent thermal desorption/gas chromatography/mass spectrometry determination of vapor phase organic contaminants

    Energy Technology Data Exchange (ETDEWEB)

    Ma, C.Y.; Skeen, J.T.; Dindal, A.B.; Higgins, C.E.; Jenkins, R.A.

    1994-05-01

    A thermal desorption/ps chromatography/mass spectrometry (TD/GC/MS) has been evaluated for the determination of volatile organic compounds (VOCS) in vapor phase samples using Carbosieve S-III/Carbotrap/Carotrap C triple sorbent traps (TST) similar to those available from a commercial source. The analysis was carried out with a Hewlett-Packard 5985A or 5995 GC/MS system with a modified injector to adapt an inhouse manufactured short-path desorber for transferring desorbate directly onto a cryofocusing loop for subsequent GC/MS analysis. Vapor phase standards generated from twenty six compounds were used for method validation, including alkanes, alkyl alcohols, alkyl ketones, and alkyl nitrites, a group of representative compounds that have previously been identified in a target airborne matrix. The method was validated based on the satisfactory results in terms of reproducibility, recovery rate, stability, and linearity. A relative, standard deviation of 0.55 to 24.3 % was obtained for the entire TD process (generation of gas phase standards, spiking the standards on and desorbing from TST) over a concentration range of 20 to 500 ng/trap. Linear correlation coefficients for the calibration curves as determined ranged from 0.81 to 0.99 and limits of detection ranged from 3 to 76 ng. For a majority of standards, recoveries of greater than 90% were observed. For three selected standards spiked on TSTS, minimal loss (10 to 22%) was observed after storing the spiked in, a 4{degree}C refrigerator for 29 days. The only chromatographable artifact observed was a 5% conversion of isopropanol to acetone. The validated method been successfully applied, to the determination of VOCs collected from various emission sources in a diversified concentration range.

  18. Evaluating the robustness of the enantioselective stationary phases on the Rosetta mission against space vacuum vaporization

    Science.gov (United States)

    Meierhenrich, Uwe J.; Cason, Julie R. L.; Szopa, Cyril; Sternberg, Robert; Raulin, François; Thiemann, Wolfram H.-P.; Goesmann, Fred

    2013-12-01

    The European Space Agency's Rosetta mission was launched in March 2004 in order to reach comet 67P/Churyumov-Gerasimenko by August 2014. The Cometary Sampling and Composition experiment (COSAC) onboard the Rosetta mission's lander "Philae" has been designed for the cometary in situ detection and quantification of organic molecules using gas chromatography coupled to mass spectrometry (GC-MS). The GC unit of COSAC is equipped with eight capillary columns that will each provide a specific stationary phase for molecular separation. Three of these stationary phases will be used to chromatographically resolve enantiomers, as they are composed of liquid polymers of polydimethylsiloxane (PDMS) to which chiral valine or cyclodextrin units are attached. Throughout the ten years of Rosetta's journey through space to reach comet 67P, these liquid stationary phases have been exposed to space vacuum, as the capillary columns within the COSAC unit were not sealed or filled with carrier gas. Long term exposures to space vacuum can cause damage to such liquid stationary phases as key monomers, volatiles, and chiral selectors can be vaporized and lost in transit. We have therefore exposed identical spare units of COSAC's chiral stationary phases over eight years to vacuum conditions mimicking those experienced in space and we have now investigated their resolution capabilities towards different enantiomers both before and after exposure to space vacuum environments. We have observed that enantiomeric resolution capabilities of these chiral liquid enantioselective stationary phases has not been affected by exposure to space vacuum conditions. Thus we conclude that the three chiral stationary phases of the COSAC experiment onboard the Rosetta mission lander "Philae" can be considered to have maintained their resolution capacities throughout their journey prior to cometary landing in November 2014.

  19. Tank vapor sampling and analysis data package for tank 241-C-106 waste retrieval sluicing system process test phase III

    Energy Technology Data Exchange (ETDEWEB)

    LOCKREM, L.L.

    1999-08-13

    This data package presents sampling data and analytical results from the March 28, 1999, vapor sampling of Hanford Site single-shell tank 241-C-106 during active sluicing. Samples were obtained from the 296-C-006 ventilation system stack and ambient air at several locations. Characterization Project Operations (CPO) was responsible for the collection of all SUMMATM canister samples. The Special Analytical Support (SAS) vapor team was responsible for the collection of all triple sorbent trap (TST), sorbent tube train (STT), polyurethane foam (PUF), and particulate filter samples collected at the 296-C-006 stack. The SAS vapor team used the non-electrical vapor sampling (NEVS) system to collect samples of the air, gases, and vapors from the 296-C-006 stack. The SAS vapor team collected and analyzed these samples for Lockheed Martin Hanford Corporation (LMHC) and Tank Waste Remediation System (TWRS) in accordance with the sampling and analytical requirements specified in the Waste Retrieval Sluicing System Vapor Sampling and Analysis Plan (SAP) for Evaluation of Organic Emissions, Process Test Phase III, HNF-4212, Rev. 0-A, (LMHC, 1999). All samples were stored in a secured Radioactive Materials Area (RMA) until the samples were radiologically released and received by SAS for analysis. The Waste Sampling and Characterization Facility (WSCF) performed the radiological analyses. The samples were received on April 5, 1999.

  20. Procedure 5 Quality Assurance Requirements For Vapor Phase Mercury Continuous Emissions Monitoring Systems And Sorbent Trap Monitoring Systems Used For Compliance Determination At Stationary Sources

    Science.gov (United States)

    Promulgated quality assurance Procedure 5 Quality Assurance Requirements For Vapor Phase Mercury Continuous Emissions Monitoring Systems And Sorbent Trap Monitoring Systems Used For Compliance Determination At Stationary Sources

  1. Susceptibility of Klebsiella pneumoniae on coriander leaves to liquid- and vapor-phase ethanol.

    Science.gov (United States)

    Krusong, Warawut; Pornpukdeewatana, Soisuda; Teerarak, Montinee

    2016-05-01

    The bio-control of ethanol on Klebsiella pneumoniae on fresh coriander leaves for significantly reducing consumer health risk was investigated. Washed and sterilized leaves of coriander were inoculated with K. pneumoniae cultured in Trypticase Soy broth. Susceptibility of the K. pneumoniae to liquid- and evaporated vapor-phase ethanol (EVE) was then examined in vitro Complete inhibition of K. pneumoniae was found with 18% (v/v) liquid ethanol. Exposure for 15 min to EVE (9.00 ± 0.8 mmol L(-1)) completely destroyed K. pneumoniae (4.04 ± 0.02 log CFU/ml) spread on Mueller Hilton agar at 30 ± 2°C. The effect of EVE with and without evaporated water vapor (EWV) on the susceptibility of K. pneumoniae on fresh coriander leaves was examined. While exposure to EVE affected the survival of K. pneumoniae, the degree of reduction depended on both the inoculation level and the EWV. Complete reduction of K. pneumoniae was achieved for the low inoculation level by EVE alone (37 ± 2% relative humidity; RH) but susceptibility was reduced with EWV (high RH; 80 ± 2%). Scanning electron microscope (SEM) images of inoculated coriander leaves confirm the effects of EVE in reducing levels of K. pneumoniae Exposure to EVE alone proved an effective bio-control for K. pneumoniae on fresh coriander leaves. © FEMS 2016. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  2. Selective transport of hydrocarbons in the unsaturated zone due to aqueous and vapor phase partitioning

    Science.gov (United States)

    Baehr, Arthur L.

    1987-01-01

    Long-term groundwater contamination can result from vapors and solutes emanating from organic liquids spilled in the unsaturated zone. The mathematical modeling analysis presented in this paper demonstrates for gasoline-range hydrocarbons, and other volatile organics commonly spilled, that diffusive transport in the unsaturated zone is a significant transport mechanism which can cause aqueous and vapor plumes to spread away from the immiscible liquid source, resulting in increasing groundwater contaminating potential. An analytical solution to a one-dimensional version of the transport model allows for the definition of a retardation coefficient which is dependent on phase-partitioning coefficients and moisture content. Significant differences in migration rates should be anticipated between hydrocarbons. A numerical solution was developed for a radially symmetric version of the model defining transport for a multiconstituent contaminant like gasoline. Differences in anticipated migration rates between aromatic and nonaromatic hydrocarbons was clearly demonstrated. A simulation based on the composition of an actual gasoline revealed that aromatic constituents, although constituting a fraction of the initial gasoline composition, completely defined the groundwater contaminating potential. This potential changes in time as constituents are selectively removed from the unsaturated zone. Further, the groundwater contaminating potential is quite sensitive to the ground surface boundary characterization.

  3. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  4. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  5. A quantitative infrared spectral library of vapor phase chemicals: applications to environmental monitoring and homeland defense

    Science.gov (United States)

    Sharpe, Steven W.; Johnson, Timothy J.; Sams, Robert L.

    2004-12-01

    The utility of infrared spectroscopy for monitoring and early warning of accidental or deliberate chemical releases to the atmosphere is well documented. Regardless of the monitoring technique (open-path or extractive) or weather the spectrometer is passive or active (Fourier transform or lidar) a high quality, quantitative reference library is essential for meaningful interpretation of the data. Pacific Northwest National Laboratory through the support of the Department of Energy has been building a library of pure, vapor phase chemical species for the last 4 years. This infrared spectral library currently contains over 300 chemicals and is expected to grow to over 400 chemicals before completion. The library spectra are based on a statistical fit to many spectra at different concentrations, allowing for rigorous error analysis. The contents of the library are focused on atmospheric pollutants, naturally occurring chemicals, toxic industrial chemicals and chemicals specifically designed to do damage. Applications, limitations and technical details of the spectral library will be discussed.

  6. Study of near-critical states of liquid-vapor phase transition of magnesium

    International Nuclear Information System (INIS)

    Emelyanov, A N; Shakhray, D V; Golyshev, A A

    2015-01-01

    Study of thermodynamic parameters of magnesium in the near-critical point region of the liquid-vapor phase transition and in the region of metal-nonmetal transition was carried out. Measurements of the electrical resistance of magnesium after shock compression and expansion into gas (helium) environment in the process of isobaric heating was carried out. Heating of the magnesium surface by heat transfer with hot helium was performed. The registered electrical resistance of expanded magnesium was about 10 4 -10 5 times lower than the electrical resistance of the magnesium under normal condition at the density less than the density of the critical point. Thus, metal-nonmetal transition was found in magnesium. (paper)

  7. An Assessment of the Technical Readiness of the Vapor Phase Catalytic Ammonia Removal Process (VPCAR) Technology

    Science.gov (United States)

    Flynn, Michael

    2000-01-01

    This poster provides an assessment of the technical readiness of the Vapor Phase Catalytic Ammonia Removal Process (VPCAR). The VPCAR technology is a fully regenerative water recycling technology designed specifically for applications such as a near term Mars exploration mission. The VPCAR technology is a highly integrated distillation/catalytic oxidation based water processor. It is designed to accept a combined wastewater stream (urine, condensate, and hygiene) and produces potable water in a single process step which requires -no regularly scheduled re-supply or maintenance for a 3 year mission. The technology is designed to be modular and to fit into a volume comparable to a single International Space Station Rack (when sized for a crew of 6). This poster provides a description of the VPCAR technology and a summary of the current performance of the technology. Also provided are the results of two separate NASA sponsored system trade studies which investigated the potential payback of further development of the VPCAR technology.

  8. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  9. Vapor Phase Ketonization of Acetic Acid on Ceria Based Metal Oxides

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Changjun; Karim, Ayman M.; Lebarbier, Vanessa M.; Mei, Donghai; Wang, Yong

    2013-06-27

    The activities of CeO2, Mn2O3-CeO2 and ZrO2-CeO2 were measured for acetic acid ketonization under reaction conditions relevant to pyrolysis vapor upgrading. We show that the catalyst ranking changed depending on the reaction conditions. Mn2O3-CeO2 was the most active catalyst at 350 oC, while ZrO2 - CeO2 was the most active catalyst at 450 oC. Under high CO2 and steam concentration in the reactants, Mn2O3-CeO2 was the most active catalyst at 350 and 450 °C. The binding energies of steam and CO2 with the active phase were calculated to provide the insight into the tolerance of Mn2O3-CeO2 to steam and CO2.

  10. Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

    Science.gov (United States)

    Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

    2018-04-01

    We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.

  11. Vapor phase polymerization of PEDOT on silicone rubber as flexible large strain sensor

    Directory of Open Access Journals (Sweden)

    Timothy Giffney

    2015-10-01

    Full Text Available This paper presents a flexible large strain sensor made from ethylenedioxythiophene deposited on silicone rubber (Ecoflex® 00-30 via vacuum assisted vapor phase polymerization (VPP process. EDOT was used due to its stability when exposed to the atmosphere. VPP is a very simple process requiring only a vacuum bell jar and a vacuum pump. Ferrite chloride (FeCl3 dissolved in tethrahydrofuran was used as the oxidant to make the resulting poly(3,4-ethylenedioxythiophene (PEDOT conductive. THF was used because it swells Ecoflex® for better infusion of oxidant and PEDOT adherence. The sensor performs reliably up to 80% strain with a gauge factor of ~2.4 and small hysteresis.

  12. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2004-03-11

    This report summarizes work of this project from October 2003 through March 2004. The major focus of the research was to further investigate BTEX removal from produced water, to quantify metal ion removal from produced water, and to evaluate a lab-scale vapor phase bioreactor (VPB) for BTEX destruction in off-gases produced during SMZ regeneration. Batch equilibrium sorption studies were conducted to evaluate the effect of semi-volatile organic compounds commonly found in produced water on the sorption of benzene, toluene, ethylbenzene, and xylene (BTEX) onto surfactant-modified zeolite (SMZ) and to examine selected metal ion sorption onto SMZ. The sorption of polar semi-volatile organic compounds and metals commonly found in produced water onto SMZ was also investigated. Batch experiments were performed in a synthetic saline solution that mimicked water from a produced water collection facility in Wyoming. Results indicated that increasing concentrations of semi-volatile organic compounds increased BTEX sorption. The sorption of phenol compounds could be described by linear isotherms, but the linear partitioning coefficients decreased with increasing pH, especially above the pKa's of the compounds. Linear correlations relating partitioning coefficients of phenol compounds with their respective solubilities and octanol-water partitioning coefficients were developed for data collected at pH 7.2. The sorption of chromate, selenate, and barium in synthetic produced water were also described by Langmuir isotherms. Experiments conducted with a lab-scale vapor phase bioreactor (VPB) packed with foam indicated that this system could achieve high BTEX removal efficiencies once the nutrient delivery system was optimized. The xylene isomers and benzene were found to require the greatest biofilter bed depth for removal. This result suggested that these VOCs would ultimately control the size of the biofilter required for the produced water application. The biofilter

  13. Migration of carbon nanotubes from liquid phase to vapor phase in the refrigerant-based nanofluid pool boiling

    Science.gov (United States)

    2011-01-01

    The migration characteristics of carbon nanotubes from liquid phase to vapor phase in the refrigerant-based nanofluid pool boiling were investigated experimentally. Four types of carbon nanotubes with the outside diameters from 15 to 80 nm and the lengths from 1.5 to 10 μm were used in the experiments. The refrigerants include R113, R141b and n-pentane. The oil concentration is from 0 to 10 wt.%, the heat flux is from 10 to 100 kW·m-2, and the initial liquid-level height is from 1.3 to 3.4 cm. The experimental results indicate that the migration ratio of carbon nanotube increases with the increase of the outside diameter or the length of carbon nanotube. For the fixed type of carbon nanotube, the migration ratio decreases with the increase of the oil concentration or the heat flux, and increases with the increase of the initial liquid-level height. The migration ratio of carbon nanotube increases with the decrease of dynamic viscosity of refrigerant or the increase of liquid phase density of refrigerant. A model for predicting the migration ratio of carbon nanotubes in the refrigerant-based nanofluid pool boiling is proposed, and the predictions agree with 92% of the experimental data within a deviation of ±20%. PMID:21711730

  14. Fabrication of a polymeric composite incorporating metal-organic framework nanosheets for solid-phase microextraction of polycyclic aromatic hydrocarbons from water samples

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Songbo; Lin, Wei; Xu, Jianqiao [MOE Key Laboratory of Aquatic Product of Safety/KLGHEI of Environment and Energy Chemistry, School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Ying [School of Pharmacy, Guiyang Medical University, Guiyang 550004 (China); Liu, Shuqin; Zhu, Fang [MOE Key Laboratory of Aquatic Product of Safety/KLGHEI of Environment and Energy Chemistry, School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Yuan, E-mail: yliu@shou.edu.cn [College of Food Science & Technology, Shanghai Ocean University, Shanghai 201306 (China); Ouyang, Gangfeng, E-mail: cesoygf@mail.sysu.edu.cn [MOE Key Laboratory of Aquatic Product of Safety/KLGHEI of Environment and Energy Chemistry, School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China)

    2017-06-08

    In this contribution, it was discovered that even distribution of a metal-organic framework (MOF) [e.g. copper 1,4-benzenedicarboxylate (CBDC)] within polymeric matrixes (e.g. polyimide) resulted in a high-efficient coating material on the surface of a stainless steel wire (SSW). Consequently, a home-made solid phase microextraction (SPME) fiber was fabricated for fast determination of target analytes in real water samples. Scanning electron microscope images indicated that the coating possessed homogenously porous surface. Coupled with gas chromatography-mass spectrometry (GC-MS) and direct immersion SPME (DI-SPME) technique, the fiber was evaluated through the analysis of five polycyclic aromatic hydrocarbons (PAHs) in aqueous samples. Under optimized extraction and desorption conditions, the established method based on the home-made fiber exhibited good repeatability (4.2–12.7%, n = 6) and reproducibility (0.9–11.7%, n = 3), low limits of detection (LODs, 0.11–2.10 ng L{sup −1}), low limits of quantification (LOQs, 0.36–6.99 ng L{sup −1}) and wide linear ranges (20–5000 ng L{sup −1}). Eventually, the method was proven applicable in the determination of PAHs in real samples, as the recoveries were in a satisfactory range (81.7–116%). - Highlights: • A homogenously porous CBDC@polyimide-coated fiber was fabricated and characterized. • The fiber exhibited highly desired extraction performance towards PAHs. • The fiber was employed for the determination of PAHs in real aqueous samples.

  15. Fabrication of a polymeric composite incorporating metal-organic framework nanosheets for solid-phase microextraction of polycyclic aromatic hydrocarbons from water samples

    International Nuclear Information System (INIS)

    Wei, Songbo; Lin, Wei; Xu, Jianqiao; Wang, Ying; Liu, Shuqin; Zhu, Fang; Liu, Yuan; Ouyang, Gangfeng

    2017-01-01

    In this contribution, it was discovered that even distribution of a metal-organic framework (MOF) [e.g. copper 1,4-benzenedicarboxylate (CBDC)] within polymeric matrixes (e.g. polyimide) resulted in a high-efficient coating material on the surface of a stainless steel wire (SSW). Consequently, a home-made solid phase microextraction (SPME) fiber was fabricated for fast determination of target analytes in real water samples. Scanning electron microscope images indicated that the coating possessed homogenously porous surface. Coupled with gas chromatography-mass spectrometry (GC-MS) and direct immersion SPME (DI-SPME) technique, the fiber was evaluated through the analysis of five polycyclic aromatic hydrocarbons (PAHs) in aqueous samples. Under optimized extraction and desorption conditions, the established method based on the home-made fiber exhibited good repeatability (4.2–12.7%, n = 6) and reproducibility (0.9–11.7%, n = 3), low limits of detection (LODs, 0.11–2.10 ng L −1 ), low limits of quantification (LOQs, 0.36–6.99 ng L −1 ) and wide linear ranges (20–5000 ng L −1 ). Eventually, the method was proven applicable in the determination of PAHs in real samples, as the recoveries were in a satisfactory range (81.7–116%). - Highlights: • A homogenously porous CBDC@polyimide-coated fiber was fabricated and characterized. • The fiber exhibited highly desired extraction performance towards PAHs. • The fiber was employed for the determination of PAHs in real aqueous samples.

  16. Antimicrobial effects of vapor phase thymol, modified atmosphere and their combination against Salmonella spp. on raw shrimp

    Science.gov (United States)

    Salmonella contamination of raw shrimp is a food safety concern in the U.S. and other countries. This research evaluated the effects of vapor phase thymol, modified atmosphere (MA) and their combination against Salmonella spp. on raw shrimp. Growth profiles of a Salmonella spp. cocktail (6 strains),...

  17. Vapor phase growth and photoluminescence of oriented-attachment Zn2GeO4 nanorods array

    Science.gov (United States)

    Tang, Haiping; Zhu, Xingda; He, Haiping

    2016-10-01

    We carry out one-step vapor phase growth of high quality Zn2GeO4 nanorods array to provide insights into the growth mechanism of such ternary oxide nanostructures. The morphology and microstructure of these nanorods are investigated carefully. Under certain conditions, the nanorods follow the oriented-attachment growth which is unusual in vapor-based growth. Each nanorod consists of many nanocrystals aligned along the [110] direction. The nanorods show strong deep ultraviolet absorption around 260 nm and broad longlife green luminescence around 490 nm.

  18. Exchange of Na+ and K+ between water vapor and feldspar phases at high temperature and low vapor pressure

    Science.gov (United States)

    Fournier, R.O.

    1976-01-01

    In order to determine whether gas (steam) containing a small amount of dissolved alkali chloride is effective in promoting base exchange of Na+ and K+ among alkali feldspars and coexisting brine or brine plus solid salt, experiments were carried out at 400-700??C and steam densities ranging down to less than 0.05. For bulk compositions rich in potassium, the low pressure results are close to previous high-pressure results in composition of the fluid and coexisting solid phase. However, when the bulk composition is more sodic, alkali feldspars are relatively richer in potassium at low pressure than at high pressure. This behaviour corresponds to enrichment of potassium in the gas phase relative to coexisting brine and precipitation of solid NaCl when the brine plus gas composition becomes moderately sodic. The gas phase is very effective in promoting base exchange between coexisting alkali feldspars at high temperature and low water pressure. This suggests that those igneous rocks which contain coexisting alkali feldspars out of chemical equilibrium either remained very dry during the high-temperature part of their cooling history or that the pore fluid was a gas containing very little potassium relative to sodium. ?? 1976.

  19. Phase transformation during simultaneous chalcogenization of CuIn(S,Se){sub 2} thin films using metalorganic sources

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, Ryuki; Kayama, Yoshiki; Sugiyama, Mutsumi [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

    2017-06-15

    Simultaneous chalcogenization of CuIn(S{sub y},Se{sub 1-y}){sub 2} (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C{sub 2}H{sub 5}){sub 2}Se] and ditertiarybutylsulfide [(t-C{sub 4}H{sub 9}){sub 2}S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu{sub 11}In{sub 9} metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Carbon-supported bimetallic Pd–Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Junming; Karim, Ayman M.; Zhang, He; Kovarik, Libor; Li, Xiaohong Shari; Hensley, Alyssa J.; McEwen, Jean-Sabin; Wang, Yong

    2013-10-01

    Abstract Carbon supported metal catalysts (Cu/C, Fe/C, Pd/C, Pt/C, PdFe/C and Ru/C) have been prepared, characterized and tested for vapor-phase hydrodeoxygenation (HDO) of guaiacol (GUA) at atmospheric pressure. Phenol was the major intermediate on all catalysts. Over the noble metal catalysts saturation of the aromatic ring was the major pathway observed at low temperature (250 °C), forming predominantly cyclohexanone and cyclohexanol. Substantial ring opening reaction was observed on Pt/C and Ru/C at higher reaction temperatures (e.g., 350 °C). Base metal catalysts, especially Fe/C, were found to exhibit high HDO activity without ring-saturation or ring-opening with the main products being benzene, phenol along with small amounts of cresol, toluene and trimethylbenzene (TMB). A substantial enhancement in HDO activity was observed on the PdFe/C catalysts. Compared with Fe/C, the yield to oxygen-free aromatic products (i.e., benzene/toluene/TMB) on PdFe/C increased by a factor of four at 350 °C, and by approximately a factor of two (83.2% versus 43.3%) at 450 °C. The enhanced activity of PdFe/C is attributed to the formation of PdFe alloy as evidenced by STEM, EDS and TPR.

  1. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24 eV), D3 (E{sub C}–0.60 eV), D4 (E{sub C}–0.69 eV), D5 (E{sub C}–0.96 eV), D7 (E{sub C}–1.19 eV), and D8, were observed. After 2 MeV electron irradiation at a fluence of 1 × 10{sup 14 }cm{sup −2}, three deep electron traps, labeled D1 (E{sub C}–0.12 eV), D5I (E{sub C}–0.89 eV), and D6 (E{sub C}–1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  2. Vapor phase polymerization deposition of conducting polymer/graphene nanocomposites as high performance electrode materials.

    Science.gov (United States)

    Yang, Yajie; Li, Shibin; Zhang, Luning; Xu, Jianhua; Yang, Wenyao; Jiang, Yadong

    2013-05-22

    In this paper, we report chemical vapor phase polymerization (VPP) deposition of novel poly(3,4-ethylenedioxythiophene) (PEDOT)/graphene nanocomposites as solid tantalum electrolyte capacitor cathode films. The PEDOT/graphene films were successfully prepared on porous tantalum pentoxide surface as cathode films through the VPP procedure. The results indicated that the high conductivity nature of PEDOT/graphene leads to the decrease of cathode films resistance and contact resistance between PEDOT/graphene and carbon paste. This nanocomposite cathode film based capacitor showed ultralow equivalent series resistance (ESR) ca. 12 mΩ and exhibited better capacitance-frequency performance than the PEDOT based capacitor. The leakage current investigation revealed that the device encapsulation process does not influence capacitor leakage current, indicating the excellent mechanical strength of PEDOT-graphene films. The graphene showed a distinct protection effect on the dielectric layer from possible mechanical damage. This high conductivity and mechanical strength graphene based conducting polymer nanocomposites indicated a promising application future for organic electrode materials.

  3. Vapor-phase-synthesized fluoroacrylate polymer thin films: thermal stability and structural properties.

    Science.gov (United States)

    Christian, Paul; Coclite, Anna Maria

    2017-01-01

    In this study, the thermal, chemical and structural stability of 1 H ,1 H ,2 H ,2 H -perfluorodecyl acrylate polymers (p-PFDA) synthetized by initiated chemical vapor deposition (iCVD) were investigated. PFDA polymers are known for their interesting crystalline aggregation into a lamellar structure that induces super-hydrophobicity and oleophobicity. Nevertheless, when considering applications which involve chemical, mechanical and thermal stresses, it is important to know the limits under which the crystalline aggregation and the resulting polymer properties are stable. For this, chemical, morphological and structural properties upon multiple heating/cooling cycles were investigated both for linear PFDA polymers and for differently strong cross-linked alterations thereof. Heat treatment leaves the chemical composition of the linear PFDA polymers largely unchanged, while a more ordered crystalline structure with smoother morphology is observed. At the same time, the hydrophobicity and the integrity of the polymer deteriorate upon heating. The integrity and hydrophobicity of cross-linked p-PFDA films was preserved likely because of the lack of internal strain due to the coexistence of both crystalline and amorphous phases. The possibility to finely tune the degree of cross-linking can therefore expand the application portfolio in which PFDA polymers can be utilized.

  4. Sulfidic vapor phase catalysts, especially tungsten sulfide, in industrial coal hydrogenation

    Energy Technology Data Exchange (ETDEWEB)

    Pier, M.

    1943-01-01

    The historical development of high-pressure processes of the I. G. Farbenindustrie, from ammonia through methanol and gasoline, and the special case of gasoline production with a fixed-bed catalyst (tungsten sulfide) were discussed. The preparation, properties, and uses of this versatile catalyst were discussed, but it was emphasized that with the sotrmy development of the process, a condition which still existed at the time of this report, and with a great number of practical problems to solve, no extensive study of basic facts had ben possible. This tungsten sulfide catalyst was an especially active vapor-phase catalyst which operated at lower temperatures than the molybdenum catalysts formerly used. It also permitted higher thruputs, even with the oils from bituminous coal that were difficult to split. For certain uses, such as the improvement of the antiknock properties or the saving in tungsten, it was strongly diluted. Studies on using up sulfur in the tungsten sulfide catalyst were in progress at this time and showed there was practically no reduction of it under the conditions of hydrogenation under pressure as long as the raw material contained sulfur.

  5. High Growth Rate Hydride Vapor Phase Epitaxy at Low Temperature through Use of Uncracked Hydrides

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Simon, John D [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ptak, Aaron J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Braun, Anna [Rose-Hulman Institute of Technology

    2018-01-22

    We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced growth mechanism. Under traditional HVPE growth conditions that involve growth from Asx species, RG exhibits a strong temperature dependence due to slow kinetics at the surface, and growth temperatures >750 degrees C are required to obtain RG > 60 um/h. We demonstrate that when the group V element reaches the surface in a hydride, the kinetic barrier is dramatically reduced and surface kinetics no longer limit RG. In this regime, RG is dependent on mass transport of uncracked AsH3 to the surface. By controlling the AsH3 velocity and temperature profile of the reactor, which both affect the degree of AsH3 decomposition, we demonstrate tuning of RG. We achieve RG above 60 um/h at temperatures as low as 560 degrees C and up to 110 um/h at 650 degrees C. We incorporate high-RG GaAs into solar cell devices to verify that the electronic quality does not deteriorate as RG is increased. The open circuit voltage (VOC), which is a strong function of non-radiative recombination in the bulk material, exhibits negligible variance in a series of devices grown at 650 degrees C with RG = 55-110 um/h. The implications of low temperature growth for the formation of complex heterostructure devices by HVPE are discussed.

  6. Graphene nanoplatelets-reinforced polyetherimide foams prepared by water vapor-induced phase separation

    Directory of Open Access Journals (Sweden)

    H. Abbasi

    2015-05-01

    Full Text Available The present work considers the preparation of medium-density polyetherimide foams reinforced with variable amounts of graphene nanoplatelets (1–10 wt% by means of water vapor-induced phase separation (WVIPS and their characterization . A homogeneous closed-cell structure with cell sizes around 10 µm was obtained, with foams exhibiting zero crystallinity according to X-ray diffraction (XRD. Thermogravimetric analysis under nitrogen showed a two-step thermal decomposition behaviour for both unfilled and graphene-reinforced foams, with foams containing graphene presenting thermal stability improvements, related to a physical barrier effect promoted by the nanoplatelets. Thermo-mechanical analysis indicated that the specific storage modulus of the nanocomposite foams significantly increased owing to the high stiffness of graphene and finer cellular morphology of the foams. Although foamed nanocomposites displayed no further sign of graphene nanoplatelets exfoliation, the electrical conductivity of these foams was significant even for low graphene contents, with a tunnel-like model fitting well to the evolution of the electrical conductivity with the amount of graphene.

  7. Environmentally Compatible Vapor-Phase Corrosion Inhibitor for Space Shuttle Hardware

    Science.gov (United States)

    Novak, Howard L.; Hall, Phillip B.

    2003-01-01

    USA-SRB Element is responsible for the assembly and refurbishment of the non-motor components of the SRB as part of Space Shuttle. Thrust Vector Control (TVC) frames structurally support components of the TVC system located in the aft skirt of the SRB. TVC frames are exposed to the seacoast environment after refurbishment and, also, to seawater immersion after splashdown, and during tow-back to CCAFS-Hangar AF refurbishment facilities. During refurbishment operations it was found that numerous TVC frames were experiencing internal corrosion and coating failures, both from salt air and seawater intrusions. Inspectors using borescopes would visually examine the internal cavities of the complicated aluminum alloy welded tubular structure. It was very difficult for inspectors to examine cavity corners and tubing intersections and particularly, to determine the extent of the corrosion and coating anomalies. Physical access to TVC frame internal cavities for corrosion removal and coating repair was virtually impossible, and an improved method using a Liquid (water based) Vapor-phase Corrosion Inhibitor (LVCI) for preventing initiation of new corrosion, and mitigating and/or stopping existing corrosion growth was recommended in lieu of hazardous paint solvents and high VOC / solvent based corrosion inhibitors. In addition, the borescopic inspection method used to detect corrosion, and/or coating anomalies had severe limitations because of part geometry, and an improved non-destructive inspection (NDI) method using Neutron Radiography (N-Ray) was also recommended.

  8. Vapor phase reactions in polymerization plasma for divinylsiloxane-bis-benzocyclobutene film deposition

    International Nuclear Information System (INIS)

    Kinoshita, Keizo; Nakano, Akinori; Kawahara, Jun; Kunimi, Nobutaka; Hayashi, Yoshihiro; Kiso, Osamu; Saito, Naoaki; Nakamura, Keiji; Kikkawa, Takamaro

    2006-01-01

    Vapor phase reactions in plasma polymerization of divinylsiloxane-bis-benzocyclobutene (DVS-BCB) low-k film depositions on 300 mm wafers were studied using mass spectrometry, in situ Fourier transform infrared, and a surface wave probe. Polymerization via Diels-Alder cycloaddition reaction was identified by the detection of the benzocyclohexene group. Hydrogen addition and methyl group desorption were also detected in DVS-BCB monomer and related large molecules. The dielectric constant k of plasma polymerized DVS-BCB with a plasma source power range up to 250 W was close to ∼2.7 of thermally polymerized DVS-BCB, and increased gradually over 250 W. The electron density at 250 W was about 1.5x10 10 cm -3 . The increase of the k value at higher power was explained by the decrease of both large molecular species via multistep dissociation and incorporation of silica components into the polymer. It was found that the reduction of electron density as well as precursor residence time is important for the plasma polymerization process to prevent the excess dissociation of the precursor

  9. Vapor pressure, heat capacities, and phase transitions of tetrakis(tert-butoxy)hafnium

    Czech Academy of Sciences Publication Activity Database

    Fulem, Michal; Růžička, K.

    2011-01-01

    Roč. 311, Dec. (2011), s. 25-29 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : tetrakis(tert-butoxy) hafnium * MO precursor * vapor pressure * heat capacity * vaporization enthalpy * enthalpy of fusion Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

  10. Phase diagram of interfacial growth modes by vapor deposition and its application for ZnO nanostructures

    Science.gov (United States)

    Shu, Da-Jun; Xiong, Xiang; Liu, Ming; Wang, Mu

    2017-09-01

    Interfacial growth from vapor has been extensively studied. However, a straightforward picture of the growth mode under different growth conditions is still lacking. In this paper, we develop a comprehensive interfacial growth theory based on the stochastic approach. Using a critical interisland separation, we construct a general phase diagram of the growth modes. It has been revealed that if the Ehrlich-Schwoebel barrier EES is smaller than a critical value, the interfacial growth proceeds in a layer-by-layer (LBL) mode at any deposition rate. However, if EES is larger than the critical value, LBL growth occurs only at very small or very large deposition rates relative to the intralayer hopping rate, and multilayer (ML) growth occurs at a moderate deposition rate. Experiments with zinc oxide growth by chemical vapor deposition have been designed to qualitatively demonstrate the theoretical model. By changing the flux of the carrier gas (nitrogen gas) in chemical vapor deposition, we realize LBL, ML, and then reentrance of LBL homoepitaxial growth of ZnO successively. Moreover, we find that surface kinetics of ZnO is suppressed by decreasing oxygen partial pressure by comparing the experimental observations and theoretical models, which is supported by our recent first-principles calculations. Since the influence of the substrate and the growth species on growth can approximately be represented by binding energy and surface kinetics, we suggest that the phase diagram is essential for interfacial growth of different materials by vapor deposition.

  11. Field tests of a chemiresistor sensor for in-situ monitoring of vapor-phase contaminants

    Science.gov (United States)

    Ho, C.; McGrath, L.; Wright, J.

    2003-04-01

    An in-situ chemiresistor sensor has been developed that can detect volatile organic compounds in subsurface environmental applications. Several field tests were conducted in 2001 and 2002 to test the reliability, operation, and performance of the in-situ chemiresistor sensor system. The chemiresistor consists of a carbon-loaded polymer deposited onto a microfabricated circuit. The polymer swells reversibly in the presence of volatile organic compounds as vapor-phase molecules absorb into the polymer, causing a change in the electrical resistance of the circuit. The change in resistance can be calibrated to known concentrations of analytes, and arrays of chemiresistors can be used on a single chip to aid in discrimination. A waterproof housing was constructed to allow the chemiresistor to be used in a variety of media including air, soil, and water. The integrated unit, which can be buried in soils or emplaced in wells, is connected via cable to a surface-based solar-powered data logger. A cell-phone modem is used to automatically download the data from the data logger on a periodic basis. The field tests were performed at three locations: (1) Edwards Air Force Base, CA; (2) Nevada Test Site; and (3) Sandia's Chemical Waste Landfill near Albuquerque, NM. The objectives of the tests were to evaluate the ruggedness, longevity, operation, performance, and engineering requirements of these sensors in actual field settings. Results showed that the sensors could be operated continuously for long periods of time (greater than a year) using remote solar-powered data-logging stations with wireless telemetry. The sensor housing, which was constructed of 304 stainless steel, showed some signs of corrosion when placed in contaminated water for several months, but the overall integrity was maintained. The detection limits of the chemiresistors were generally found to be near 0.1% of the saturated vapor pressure of the target analyte in controlled laboratory conditions (e

  12. Submicrometric Magnetic Nanoporous Carbons Derived from Metal-Organic Frameworks Enabling Automated Electromagnet-Assisted Online Solid-Phase Extraction.

    Science.gov (United States)

    Frizzarin, Rejane M; Palomino Cabello, Carlos; Bauzà, Maria Del Mar; Portugal, Lindomar A; Maya, Fernando; Cerdà, Víctor; Estela, José M; Turnes Palomino, Gemma

    2016-07-19

    We present the first application of submicrometric magnetic nanoporous carbons (μMNPCs) as sorbents for automated solid-phase extraction (SPE). Small zeolitic imidazolate framework-67 crystals are obtained at room temperature and directly carbonized under an inert atmosphere to obtain submicrometric nanoporous carbons containing magnetic cobalt nanoparticles. The μMNPCs have a high contact area, high stability, and their preparation is simple and cost-effective. The prepared μMNPCs are exploited as sorbents in a microcolumn format in a sequential injection analysis (SIA) system with online spectrophotometric detection, which includes a specially designed three-dimensional (3D)-printed holder containing an automatically actuated electromagnet. The combined action of permanent magnets and an automatically actuated electromagnet enabled the movement of the solid bed of particles inside the microcolumn, preventing their aggregation, increasing the versatility of the system, and increasing the preconcentration efficiency. The method was optimized using a full factorial design and Doehlert Matrix. The developed system was applied to the determination of anionic surfactants, exploiting the retention of the ion-pairs formed with Methylene Blue on the μMNPC. Using sodium dodecyl sulfate as a model analyte, quantification was linear from 50 to 1000 μg L(-1), and the detection limit was equal to 17.5 μg L(-1), the coefficient of variation (n = 8; 100 μg L(-1)) was 2.7%, and the analysis throughput was 13 h(-1). The developed approach was applied to the determination of anionic surfactants in water samples (natural water, groundwater, and wastewater), yielding recoveries of 93% to 110% (95% confidence level).

  13. New membrane preconcentration devices for trace vapor detection systems phase 1

    Science.gov (United States)

    Armstrong, D.; Baker, R. W.; Mohr, J.

    This report describes the results of a six month feasibility program to develop a membrane vapor concentration device. The device would be used to concentrate trace organic vapors in air prior to introduction to a detector instrument. In this way the complexity and cost of the instrumentation required to detect vapors emitted from hidden explosives could be reduced. The membrane concentrator involves the use of ultrathin silicone rubber composite membranes contained in a novel separation cell. Toluene was used as a model organic vapor for explosive vapors. The membrane system was able to obtain enrichments of as much as 50-fold with toluene at pressure ratios of less than 10 across the cell. However, the time to reach this degree of concentration was excessively long at 200 minutes. It appears that large amounts of the organic vapor are sorbed onto and into the membrane and adhesives of the membrane cell. It was not possible to overcome this sorption effect and reduce the system's lag time to a more useful value. Thus, this membrane concentration device does not appear to be a practical preconcentrator for a trace vapor detection instrument.

  14. Molecular dynamics study of kinetic boundary condition at an interface between a polyatomic vapor and its condensed phase

    OpenAIRE

    Ishiyama, Tatsuya; Yano, Takeru; Fujikawa, Shigeo

    2004-01-01

    The kinetic boundary condition for the Boltzmann equation at an interface between a polyatomic vapor and its liquid phase is investigated by the numerical method of molecular dynamics, with particular emphasis on the functional form of the evaporation part of the boundary condition, including the evaporation coefficient. The present study is an extension of a previous one for argon [Ishiyama, Yano, and Fujikawa, Phys. Fluids 16, 2899 (2004)] to water and methanol, typical examples of polyatom...

  15. An Evaluation of the Vapor Phase Catalytic Ammonia Removal Process for Use in a Mars Transit Vehicle

    Science.gov (United States)

    Flynn, Michael; Borchers, Bruce

    1998-01-01

    An experimental program has been developed to evaluate the potential of the Vapor Phase Catalytic Ammonia Reduction (VPCAR) technology for use as a Mars Transit Vehicle water purification system. Design modifications which will be required to ensure proper operation of the VPCAR system in reduced gravity are also evaluated. The VPCAR system is an integrated wastewater treatment technology that combines a distillation process with high temperature catalytic oxidation. The distillation portion of the system utilizes a vapor compression distillation process to provide an energy efficient phase change separation. This portion of the system removes any inorganic salts and large molecular weight, organic contaminates, i.e., non-volatile, from the product water stream and concentrates these contaminates into a byproduct stream. To oxidize the volatile organic compounds and ammonia, a vapor phase, high temperature catalytic oxidizer is used. This catalytic system converts these compounds along with the aqueous product into CO2, H2O, and N2O. A secondary catalytic bed can then be used to reduce the N2O to nitrogen and oxygen (although not evaluated in this study). This paper describes the design specification of the VPCAR process, the relative benefits of its utilization in a Mars Transit Vehicle, and the design modification which will be required to ensure its proper operation in reduced gravity. In addition, the results of an experimental evaluation of the processors is presented. This evaluation presents the processors performance based upon product water purity, water recovery rates, and power.

  16. Dynamic scaling and kinetic roughening of poly(ethylene) islands grown by vapor phase deposition

    Czech Academy of Sciences Publication Activity Database

    Choukourov, A.; Melnichuk, I.; Gordeev, I.; Kylián, O.; Hanuš, J.; Kousal, J.; Solař, P.; Hanyková, L.; Brus, Jiří; Slavínská, D.; Biederman, H.

    2014-01-01

    Roč. 565, 28 August (2014), s. 249-260 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : poly(ethylene) * physical vapor deposition * island growth Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.759, year: 2014

  17. Solid State Transmitters for Water Vapor and Ozone DIAL Systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed a common architecture for laser transmitters that address requirements for water vapor as well as ground and airborne ozone lidar systems. Our...

  18. Correlation of vapor phase infrared spectra and regioisomeric structure in synthetic cannabinoids

    Science.gov (United States)

    Smith, Lewis W.; Thaxton-Weissenfluh, Amber; Abiedalla, Younis; DeRuiter, Jack; Smith, Forrest; Clark, C. Randall

    2018-05-01

    The twelve 1-n-pentyl-2-, 3-, 4-, 5-, 6- and 7-(1- and 2-naphthoyl)-indoles each have the same substituents attached to the indole ring, identical elemental composition (C24H23NO) yielding identical nominal and accurate masses. These twelve isomers cover all possible positions of carbonyl bridge substitution for both indole (positons 2-7) and naphthalene rings (positions 1 and 2). Regioisomeric compounds can represent significant challenges for mass based analytical methods however, infrared spectroscopy is a powerful tool for the identification of positional isomers in organic compounds. The vapor phase infrared spectra of these twelve uniquely similar compounds were evaluated in GC-IR experiments. These spectra show the bridge position on the indole ring is a dominating influence over the carbonyl absorption frequency observed for these compounds. Substitution on the pyrrole moiety of the indole ring yields the lowest Cdbnd O frequency values for position 2 and 3 giving a narrow range from 1656 to 1654 cm-1. Carbonyl absorption frequencies are higher when the naphthoyl group is attached to the benzene portion of the indole ring yielding absorption values from 1674 to 1671 cm-1. The aliphatic stretching bands in the 2900 cm-1 region yield a consistent triplet pattern because the N-alkyl substituent tail group remains unchanged for all twelve regioisomers. The asymmetric CH2 stretch is the most intense of these three bands. Changes in positional bonding for both the indole and naphthalene ring systems results in unique patterns within the 700 wavenumber out-of-plane region and these absorption bands are different for all 12 regioisomers.

  19. Correlation of vapor phase infrared spectra and regioisomeric structure in synthetic cannabinoids.

    Science.gov (United States)

    Smith, Lewis W; Thaxton-Weissenfluh, Amber; Abiedalla, Younis; DeRuiter, Jack; Smith, Forrest; Clark, C Randall

    2018-05-05

    The twelve 1-n-pentyl-2-, 3-, 4-, 5-, 6- and 7-(1- and 2-naphthoyl)-indoles each have the same substituents attached to the indole ring, identical elemental composition (C 24 H 23 NO) yielding identical nominal and accurate masses. These twelve isomers cover all possible positions of carbonyl bridge substitution for both indole (positons 2-7) and naphthalene rings (positions 1 and 2). Regioisomeric compounds can represent significant challenges for mass based analytical methods however, infrared spectroscopy is a powerful tool for the identification of positional isomers in organic compounds. The vapor phase infrared spectra of these twelve uniquely similar compounds were evaluated in GC-IR experiments. These spectra show the bridge position on the indole ring is a dominating influence over the carbonyl absorption frequency observed for these compounds. Substitution on the pyrrole moiety of the indole ring yields the lowest CO frequency values for position 2 and 3 giving a narrow range from 1656 to 1654cm -1 . Carbonyl absorption frequencies are higher when the naphthoyl group is attached to the benzene portion of the indole ring yielding absorption values from 1674 to 1671cm -1 . The aliphatic stretching bands in the 2900cm -1 region yield a consistent triplet pattern because the N-alkyl substituent tail group remains unchanged for all twelve regioisomers. The asymmetric CH 2 stretch is the most intense of these three bands. Changes in positional bonding for both the indole and naphthalene ring systems results in unique patterns within the 700 wavenumber out-of-plane region and these absorption bands are different for all 12 regioisomers. Copyright © 2018 Elsevier B.V. All rights reserved.

  20. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  1. INERA Conference: Vapor Phase Technologies for Metal Oxide and Carbon Nanostructures

    International Nuclear Information System (INIS)

    2016-01-01

    We are pleased to introduce the Proceedings of the Conference “Vapor Phase Technologies for Metal Oxide and Carbon Nanostructures” (6 th to 8 th of July 2016, Velingrad, Bulgaria) organized by the Institute of Solid State Physics, Bulgarian Academy of Sciences in the frames of the Project INERA: “Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures” REGPOT-2012-2013-1 NMP (http://www.inera.org). Participants from 7 different countries delivered 10 invited lectures, 16 oral and 26 poster presentations, contributing in 7 different topics. Papers submitted for publication in the Proceedings were refereed according to the standards of the Journal of Physics: Conference Series and the accepted ones illustrate the diversity and the high quality of the contributions. The Conference offered good opportunities for many interesting discussions and ample exchange of ideas between the participants. It became also a meeting point where INERA partners could plan their future collaboration and joint projects. A significant factor for the success of the Conference was the conference venue - the beautiful spa resort Velingrad located 130 km from Sofia in the western part of the Rhodope Mountains. It is one of the leading “balneological” resorts in the Balkans with its ninety mineral water springs suitable for treatment of a wide range of diseases. The participants enjoyed also the rich social program, in particular the guided trip to the excavation site Dorkovo, one of the milestones marking the beginning of the Pliocene epoch in Eastern Europe. The proceedings of conferences and workshops organized in the frames of INERA Project are regularly published by the Journal of Physics: Conference Series. We are grateful to the Journal's staff for the continuous support. Managing Editor: Diana Nesheva Co-editors: Hassan Chamati, Julia Genova, Kostadinka Gesheva, Tatyana Ivanova, Albena Paskaleva and Anna Szekeres (paper)

  2. High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

    Science.gov (United States)

    Schulte, Kevin L.; Braun, Anna; Simon, John; Ptak, Aaron J.

    2018-01-01

    We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced growth mechanism. Under traditional HVPE growth conditions that involve growth from Asx species, RG exhibits a strong temperature dependence due to slow kinetics at the surface, and growth temperatures >750 °C are required to obtain RG > 60 μm/h. We demonstrate that when the group V element reaches the surface in a hydride, the kinetic barrier is dramatically reduced and surface kinetics no longer limit RG. In this regime, RG is dependent on mass transport of uncracked AsH3 to the surface. By controlling the AsH3 velocity and temperature profile of the reactor, which both affect the degree of AsH3 decomposition, we demonstrate tuning of RG. We achieve RG above 60 μm/h at temperatures as low as 560 °C and up to 110 μm/h at 650 °C. We incorporate high-RG GaAs into solar cell devices to verify that the electronic quality does not deteriorate as RG is increased. The open circuit voltage (VOC), which is a strong function of non-radiative recombination in the bulk material, exhibits negligible variance in a series of devices grown at 650 °C with RG = 55-110 μm/h. The implications of low temperature growth for the formation of complex heterostructure devices by HVPE are discussed.

  3. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  4. Simplified efficient phosphorescent organic light-emitting diodes by organic vapor phase deposition

    Science.gov (United States)

    Pfeiffer, P.; Beckmann, C.; Stümmler, D.; Sanders, S.; Simkus, G.; Heuken, M.; Vescan, A.; Kalisch, H.

    2017-12-01

    The most efficient phosphorescent organic light-emitting diodes (OLEDs) are comprised of complex stacks with numerous organic layers. State-of-the-art phosphorescent OLEDs make use of blocking layers to confine charge carriers and excitons. On the other hand, simplified OLEDs consisting of only three organic materials have shown unexpectedly high efficiency when first introduced. This was attributed to superior energy level matching and suppressed external quantum efficiency (EQE) roll-off. In this work, we study simplified OLED stacks, manufactured by organic vapor phase deposition, with a focus on charge balance, turn-on voltage (Von), and efficiency. To prevent electrons from leaking through the device, we implemented a compositionally graded emission layer. By grading the emitter with the hole transport material, charge confinement is enabled without additional blocking layers. Our best performing organic stack is composed of only three organic materials in two layers including the emitter Ir(ppy)3 and yields a Von of 2.5 V (>1 cd/m2) and an EQE of 13% at 3000 cd/m2 without the use of any additional light extraction techniques. Changes in the charge balance, due to barrier tuning or adjustments in the grading parameters and layer thicknesses, are clearly visible in the current density-voltage-luminance (J-V-L) measurements. As charge injection at the electrodes and organic interfaces is of great interest but difficult to investigate in complex device structures, we believe that our simplified organic stack is not only a potent alternative to complex state-of-the-art OLEDs but also a well suited test vehicle for experimental studies focusing on the modification of the electrode-organic semiconductor interface.

  5. Detection of vapor-phase organophosphate threats using wearable conformable integrated epidermal and textile wireless biosensor systems.

    Science.gov (United States)

    Mishra, Rupesh K; Martín, Aida; Nakagawa, Tatsuo; Barfidokht, Abbas; Lu, Xialong; Sempionatto, Juliane R; Lyu, Kay Mengjia; Karajic, Aleksandar; Musameh, Mustafa M; Kyratzis, Ilias L; Wang, Joseph

    2018-03-15

    Flexible epidermal tattoo and textile-based electrochemical biosensors have been developed for vapor-phase detection of organophosphorus (OP) nerve agents. These new wearable sensors, based on stretchable organophosphorus hydrolase (OPH) enzyme electrodes, are coupled with a fully integrated conformal flexible electronic interface that offers rapid and selective square-wave voltammetric detection of OP vapor threats and wireless data transmission to a mobile device. The epidermal tattoo and textile sensors display a good reproducibility (with RSD of 2.5% and 4.2%, respectively), along with good discrimination against potential interferences and linearity over the 90-300mg/L range, with a sensitivity of 10.7µA∙cm 3 ∙mg -1 (R 2 = 0.983) and detection limit of 12mg/L in terms of OP air density. Stress-enduring inks, used for printing the electrode transducers, ensure resilience against mechanical deformations associated with textile and skin-based on-body sensing operations. Theoretical simulations are used to estimate the OP air density over the sensor surface. These fully integrated wearable wireless tattoo and textile-based nerve-agent vapor biosensor systems offer considerable promise for rapid warning regarding personal exposure to OP nerve-agent vapors in variety of decentralized security applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Molecular association of heteronuclear vibrating square-well dumbbells in liquid-vapor phase equilibrium.

    Science.gov (United States)

    Chapela, Gustavo A; de Río, Fernando; Alejandre, José

    2011-06-14

    Molecular aggregates are formed by heteronuclear vibrating square-well dumbbells. In a recent article [G. A. Chapela and J. Alejandre, J. Chem. Phys., 132(10), 104704 (2010)], it is shown that heteronuclear vibrating square-well dumbbells with a diameter ratio between particles of 1/2 and interacting potential ratio of 4 form micelles of different sizes and shapes which manifest themselves in both the liquid and vapor phases, up to and above the critical point. This means that micellization and phase separation are present simultaneously in this simple model. These systems present a maximum in the critical temperature when plotted against the potential well depth of the second particle ε(2). In the same publication, it was speculated that the formation of micelles was responsible for the appearance of the maximum. A thorough study on this phenomena is presented here and it is found that there is a threshold on the size of the second particle and its corresponding depth of interaction potential, where the micelles are formed. If the diameter and well depth of the second particle are small enough for the first and deep enough for the second, micelles are formed. For σ(2)/σ(1) between 0.25 and 0.65 and ε(2)/ε(1) larger than 5.7, micelles are formed up to and above the critical temperature. Outside these ranges micelles appear only at temperatures lower than the critical point. There is a strong temperature dependence on the formation and persistence of the aggregates. For the deepest wells and large enough second particles, a gel interconnected aggregate is obtained. In this work, the micelles are formed at temperatures as low as the triple point and as high as the critical point and, in some cases, persist well above it. The presence of these maxima in critical temperatures T(c) when plotted against ε(2) as follows. At lower values of ε(2), an increase of T(c) is obtained as is expected by the increase of the attractive volume as indicated by the principle of

  7. Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

    Directory of Open Access Journals (Sweden)

    S. H. Tabatabai Yazdi

    2006-03-01

    Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

  8. Sinter-Resistant Platinum Catalyst Supported by Metal-Organic Framework

    Energy Technology Data Exchange (ETDEWEB)

    Kim, In Soo [Materials Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA; Nanophotonics Center, Korea Institute of Science and Technology, Seoul 02792 South Korea; Li, Zhanyong [Department of Chemistry, Northwestern University, 2145 Sheridan Rd. Evanston IL 60208 USA; Zheng, Jian [Institute for Integrated Catalysis, Pacific Northwest National Lab, P.O. Box 999 Richland WA 99352 USA; Platero-Prats, Ana E. [X-ray Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA; Mavrandonakis, Andreas [Department of Chemistry, University of Minnesota, 207 Pleasant St. SE Minneapolis MN 55455 USA; Pellizzeri, Steven [Chemical and Biomolecular Engineering, Clemson University, 205 Earle Hall Clemson SC 29634 USA; Ferrandon, Magali [Chemical Sciences and Engineering Division, Argonne National Lab, 9700 S. Cass Ave. Argonne IL 60439 USA; Vjunov, Aleksei [Institute for Integrated Catalysis, Pacific Northwest National Lab, P.O. Box 999 Richland WA 99352 USA; Gallington, Leighanne C. [X-ray Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA; Webber, Thomas E. [Department of Chemistry, University of Minnesota, 207 Pleasant St. SE Minneapolis MN 55455 USA; Vermeulen, Nicolaas A. [Department of Chemistry, Northwestern University, 2145 Sheridan Rd. Evanston IL 60208 USA; Penn, R. Lee [Department of Chemistry, University of Minnesota, 207 Pleasant St. SE Minneapolis MN 55455 USA; Getman, Rachel B. [Chemical and Biomolecular Engineering, Clemson University, 205 Earle Hall Clemson SC 29634 USA; Cramer, Christopher J. [Department of Chemistry, University of Minnesota, 207 Pleasant St. SE Minneapolis MN 55455 USA; Chapman, Karena W. [X-ray Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA; Camaioni, Donald M. [Institute for Integrated Catalysis, Pacific Northwest National Lab, P.O. Box 999 Richland WA 99352 USA; Fulton, John L. [Institute for Integrated Catalysis, Pacific Northwest National Lab, P.O. Box 999 Richland WA 99352 USA; Lercher, Johannes A. [Institute for Integrated Catalysis, Pacific Northwest National Lab, P.O. Box 999 Richland WA 99352 USA; Department of Chemistry and Catalysis Research Institute, Technische Universität München, Lichtenbergstrasse 4 85748 Garching Germany; Farha, Omar K. [Department of Chemistry, Northwestern University, 2145 Sheridan Rd. Evanston IL 60208 USA; Hupp, Joseph T. [Materials Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA; Department of Chemistry, Northwestern University, 2145 Sheridan Rd. Evanston IL 60208 USA; Martinson, Alex B. F. [Materials Science Division, Argonne National Lab, 9700 S Cass Ave. Argonne IL 60439 USA

    2018-01-02

    Installed on the zirconia nodes of a metal-organic framework (MOF) NU-1000 via targeted vapor-phase synthesis. The catalytic Pt clusters, site-isolated by organic linkers, are shown to exhibit high catalytic activity for ethylene hydrogenation while exhibiting resistance to sintering up to 200 degrees C. In situ IR spectroscopy reveals the presence of both single atoms and few-atom clusters that depend upon synthesis conditions. Operando X-ray absorption spectroscopy and Xray pair distribution analyses reveal unique changes in chemical bonding environment and cluster size stability while on stream. Density functional theory calculations elucidate a favorable reaction pathway for ethylene hydrogenation with the novel catalyst. These results provide evidence that atomic layer deposition (ALD) in MOFs is a versatile approach to the rational synthesis of size-selected clusters, including noble metals, on a high surface area support.

  9. Modeling of gas-phase chemistry in the chemical vapor deposition of polysilicon in a cold wall system

    Energy Technology Data Exchange (ETDEWEB)

    Toprac, A.J.; Edgar, T.F.; Trachtenberg, I. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

    1993-06-01

    The relative contribution of gas-phase chemistry to deposition processes is an important issue both from the standpoint of operation and modeling of these processes. In polysilicon deposition from thermally activated silane in a cold wall rapid thermal chemical vapor deposition (RTCVD) system, the relative contribution of gas-phase chemistry to the overall deposition rate was examined by a mass-balance model. Evaluating the process at conditions examined experimentally, the model indicated that gas-phase reactions may be neglected to good accuracy in predicting polysilicon deposition rate. The model also provided estimates of the level of gas-phase generated SiH[sub 2] associated with deposition on the cold-process chamber walls.

  10. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2005-03-11

    second residence time, the GAC bed reduced peak contaminant concentrations by 97%. After the initial peak, the inlet VOC concentration in the SMZ regeneration gas stream drops exponentially with time. During this period, the contaminants on the GAC subsequently desorbed at a nearly steady rate over the next 45 hours resulting in a relatively steady effluent concentration of approximately 25 ppm{sub v}. This lower concentration is readily degradable by a downstream vapor phase biofilter (VPB) and the steady nature of the feed stream will prevent the biomass in the VPB from enduring starvation conditions between SMZ regeneration cycles. Repetitive sorption and desorption cycles that would be expected in the field were also investigated. It was determined that although the GAC initially lost some VOC sorption capacity, the adsorption and desorption profiles stabilized after approximately 6 cycles indicating that a GAC bed should be suitable for continuous operation. In preparation for the pilot field testing of the SMZ/VPB system, design, ''in-house'' construction and testing of the field system were completed during this project period. The design of the SMZ system for the pilot test was based on previous investigations by the PI's in Wyoming, 2002 and on analyses of the produced water at the field site in New Mexico. The field tests are scheduled for summer, 2005. A cost survey, feasibility of application and cost analyses were completed to investigate the long term effectiveness of the SMZ/VPB system as a method of treating produced water for re-use. Several factors were investigated, including: current costs to treat and dispose of produced water, end-use water quality requirements, and state and federal permitting requirements.

  11. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    Science.gov (United States)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  12. Mw Spectroscopy Coupled with Ultrafast UV Laser Vaporization: {RIBOSE} Found in the Gas Phase

    Science.gov (United States)

    Cocinero, Emilio J.; Ecija, Patricia; Basterretxea, Francisco J.; Fernandez, Jose A.; Castano, Fernando; Lesarri, Alberto; Grabow, Jens-Uwe

    2012-06-01

    Sugars are aldoses or ketoses with multiple hydroxy groups which have been elusive to spectroscopic studies. Here we report a rotational study of the aldopentose ribose. According to any standard textbook aldopentoses can exhibit either linear forms, cyclic five-membered (furanose) structures or six-membered (pyranose) rings, occurring either as α- or β- anomers depending on the orientation of the hydroxy group at C-1 (anomeric carbon). β-Furanose is predominant in ribonucleosides, RNA, ATP and other biochemically relevant derivatives, but is β-furanose the native form also of free ribose? Recent condensed-phase X-ray and older NMR studies delivered conflicting results. In order to solve this question we conducted a microwave study on D-ribose that, owing to ultrafast UV laser vaporization, has become the first C-5 sugar observed with rotational resolution. The spectrum revealed six conformations of free ribose, preferentially adopting β-pyranose chairs as well as higher-energy α-pyranose forms. The method also allowed for unambiguous distinction between different orientations of the hydroxy groups, which stabilize the structures by cooperative hydrogen-bond networks. No evidence was observed of the α-/β-furanoses or linear forms found in the biochemical derivatives. i) D. Šišak, L. B. McCusker, G. Zandomeneghi, B. H. Meier, D. Bläser, R. Boese, W. B. Schweizer, R. Gylmour and J. D. Dunitz Angew. Chem. Int. Ed. 49, 4503, 2010. ii) W. Saenger Angew. Chem. Int. Ed. 49, 6487, 2010. i) M. Rudrum, and D. F. Shaw, J. Chem. Soc. 52, 1965. ii) R. U. Lemieux and J. D. Stevens Can. J. Chem. 44, 249, 1966. iii) E. Breitmaier and U. Hollstein Org. Magn. Reson. 8, 573, 1976. E. J. Cocinero, A. Lesarri, P. Écija, F. J. Basterretxea, J. U. Grabow, J. A. Fernández and F. Castaño Angew. Chem. Int. Ed. in press: DOI: 10.1002/anie.201107973, 2012.

  13. Treatment of Produced Water Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; Robert S. Bowman; Enid J. Sullivan; Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Craig R. Altare

    2006-01-31

    Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. Produced waters typically contain a high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component as well as chemicals added during the oil-production process. It has been estimated that a total of 14 billion barrels of produced water were generated in 2002 from onshore operations (Veil, 2004). Although much of this produced water is disposed via reinjection, environmental and cost considerations can make surface discharge of this water a more practical means of disposal. In addition, reinjection is not always a feasible option because of geographic, economic, or regulatory considerations. In these situations, it may be desirable, and often necessary from a regulatory viewpoint, to treat produced water before discharge. It may also be feasible to treat waters that slightly exceed regulatory limits for re-use in arid or drought-prone areas, rather than losing them to reinjection. A previous project conducted under DOE Contract DE-AC26-99BC15221 demonstrated that surfactant modified zeolite (SMZ) represents a potential treatment technology for produced water containing BTEX. Laboratory and field experiments suggest that: (1) sorption of benzene, toluene, ethylbenzene and xylenes (BTEX) to SMZ follows linear isotherms in which sorption increases with increasing solute hydrophobicity; (2) the presence of high salt concentrations substantially increases the capacity of the SMZ for BTEX; (3) competitive sorption among the BTEX compounds is negligible; and, (4) complete recovery of the SMZ sorption capacity for BTEX can be achieved by air sparging the SMZ. This report summarizes research for a follow on project to optimize the regeneration process for multiple sorption/regeneration cycles, and to develop and incorporate a vapor phase bioreactor (VPB) system for treatment of the off-gas generated during

  14. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

    Directory of Open Access Journals (Sweden)

    Rajesh Kappera

    2014-09-01

    Full Text Available Two dimensional transition metal dichalcogenides (2D TMDs offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

  15. Shock-and-Release to the Liquid-Vapor Phase Boundary: Experiments and Applications to Planetary Science

    Science.gov (United States)

    Stewart, Sarah

    2017-06-01

    Shock-induced vaporization was a common process during the end stages of terrestrial planet formation and transient features in extra-solar systems are attributed to recent giant impacts. At the Sandia Z Machine, my collaborators and I are conducting experiments to study the shock Hugoniot and release to the liquid-vapor phase boundary of major minerals in rocky planets. Current work on forsterite, enstatite and bronzite and previous results on silica, iron and periclase demonstrate that shock-induced vaporization played a larger role during planet formation than previously thought. I will provide an overview of the experimental results and describe how the data have changed our views of planetary impact events in our solar system and beyond. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. This work is supported by the Z Fundamental Science Program at Sandia National Laboratories, DOE-NNSA Grant DE- NA0002937, NASA Grant # NNX15AH54G, and UC Multicampus-National Lab Collaborative Research and Training Grant #LFR-17-449059.

  16. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Wu, Shaoteng; Wang, Liancheng; Yi, Xiaoyan; Liu, Zhiqiang; Wei, Tongbo; Yuan, Guodong; Wang, Junxi; Li, Jinmin

    2017-11-01

    GaN nanowires (NWs) are synthesized on Si (111) using vapor-liquid-solid hydride vapor phase epitaxy at low temperature (740-780 °C). We find that the flow rate of the GaCl (HCl) gas has a large impact on the NW lateral growth rate, which affects the NW morphology, axial growth rate, and optical property. Upon increasing the flow rate of GaCl, the uncatalyzed vapor solid lateral growth increases rapidly, leading to variations in NW morphology from wire-like to tower-like and rod-like. The photoluminescence spectrum shows a broad red luminescence (RL) at around 660 nm and a weak near-band-edge luminescence at around 400 nm when lateral growth is at a significant level. Furthermore, spatially resolved cathodoluminescence and high-resolution transmission electron microscopy observations confirmed that this RL originates from the defective lateral growth. Finally, by inhibiting the lateral growth, GaN NWs with a high aspect ratio and excellent crystal quality (no RL observed at around 660 nm) were successfully synthesized with a rapid growth rate of 170 μm/h.

  17. Hollow nanoporous covalent triazine frameworks via acid vapor-assisted solid phase synthesis for enhanced visible light photoactivity

    KAUST Repository

    Huang, Wei

    2016-04-11

    Herein, we report a novel trifluoromethanesulfonic acid vapor-assisted solid phase synthetic method to construct nanoporous covalent triazine frameworks with highly ordered hollow interconnected pores under mild reaction conditions. This unique solid state synthetic route allows not only the avoidance of undesired side reactions caused by traditional high temperature synthesis, but also the maintaining of defined and precise optical and electronic properties of the nonporous triazine frameworks. Promising photocatalytic activity of the polytriazine networks was demonstrated in the photoreduction reaction of 4-nitrophenol into 4-aminophenol under visible light irradiation.

  18. Modelling and numerical simulation of liquid-vapor phase transitions; Modelisation et simulation numerique des transitions de phase liquide-vapeur

    Energy Technology Data Exchange (ETDEWEB)

    Caro, F

    2004-11-15

    This work deals with the modelling and numerical simulation of liquid-vapor phase transition phenomena. The study is divided into two part: first we investigate phase transition phenomena with a Van Der Waals equation of state (non monotonic equation of state), then we adopt an alternative approach with two equations of state. In the first part, we study the classical viscous criteria for selecting weak solutions of the system used when the equation of state is non monotonic. Those criteria do not select physical solutions and therefore we focus a more recent criterion: the visco-capillary criterion. We use this criterion to exactly solve the Riemann problem (which imposes solving an algebraic scalar non linear equation). Unfortunately, this step is quite costly in term of CPU which prevent from using this method as a ground for building Godunov solvers. That is why we propose an alternative approach two equations of state. Using the least action principle, we propose a phase changing two-phase flow model which is based on the second thermodynamic principle. We shall then describe two equilibrium submodels issued from the relaxations processes when instantaneous equilibrium is assumed. Despite the weak hyperbolicity of the last sub-model, we propose stable numerical schemes based on a two-step strategy involving a convective step followed by a relaxation step. We show the ability of the system to simulate vapor bubbles nucleation. (author)

  19. Modeling Two-Phase Flow and Vapor Cycles Using the Generalized Fluid System Simulation Program

    Science.gov (United States)

    Smith, Amanda D.; Majumdar, Alok K.

    2017-01-01

    This work presents three new applications for the general purpose fluid network solver code GFSSP developed at NASA's Marshall Space Flight Center: (1) cooling tower, (2) vapor-compression refrigeration system, and (3) vapor-expansion power generation system. These systems are widely used across engineering disciplines in a variety of energy systems, and these models expand the capabilities and the use of GFSSP to include fluids and features that are not part of its present set of provided examples. GFSSP provides pressure, temperature, and species concentrations at designated locations, or nodes, within a fluid network based on a finite volume formulation of thermodynamics and conservation laws. This paper describes the theoretical basis for the construction of the models, their implementation in the current GFSSP modeling system, and a brief evaluation of the usefulness of the model results, as well as their applicability toward a broader spectrum of analytical problems in both university teaching and engineering research.

  20. Toward a Monte Carlo program for simulating vapor-liquid phase equilibria from first principles

    Energy Technology Data Exchange (ETDEWEB)

    McGrath, M; Siepmann, J I; Kuo, I W; Mundy, C J; Vandevondele, J; Sprik, M; Hutter, J; Mohamed, F; Krack, M; Parrinello, M

    2004-10-20

    Efficient Monte Carlo algorithms are combined with the Quickstep energy routines of CP2K to develop a program that allows for Monte Carlo simulations in the canonical, isobaric-isothermal, and Gibbs ensembles using a first principles description of the physical system. Configurational-bias Monte Carlo techniques and pre-biasing using an inexpensive approximate potential are employed to increase the sampling efficiency and to reduce the frequency of expensive ab initio energy evaluations. The new Monte Carlo program has been validated through extensive comparison with molecular dynamics simulations using the programs CPMD and CP2K. Preliminary results for the vapor-liquid coexistence properties (T = 473 K) of water using the Becke-Lee-Yang-Parr exchange and correlation energy functionals, a triple-zeta valence basis set augmented with two sets of d-type or p-type polarization functions, and Goedecker-Teter-Hutter pseudopotentials are presented. The preliminary results indicate that this description of water leads to an underestimation of the saturated liquid density and heat of vaporization and, correspondingly, an overestimation of the saturated vapor pressure.

  1. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  2. Heteroepitaxial Growth of GaN Nanostructures via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon using Graphene as Buffer Layer

    OpenAIRE

    Heilmann, Martin

    2017-01-01

    Modern high efficient optoelectronic devices, such as blue light emitting diodes or laser diodes in Blu-ray player, are based on the compound semiconductor GaN. Through its additional field of application as high frequency and high power transistors GaN could in the future even outshine Si as the most important semiconducting material. The lack of large area and cost-effective GaN substrates makes a growth of the aforementioned device structures on non-native substrates (e.g. sapphire) necess...

  3. Theoretical Investigation of the Structural Stabilities of Ceria Surfaces and Supported Metal Nanocluster in Vapor and Aqueous Phases

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhibo [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Liu, Ning [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chen, Biaohua [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Li, Jianwei [State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Mei, Donghai [Institute for Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States

    2018-01-25

    Understanding the structural stability and dynamics at the interface between the solid metal oxide and aqueous phase is significant in a variety of industrial applications including heterogeneous catalysis and environmental remediation. In the present work, the stabilities of three low-index ceria (CeO2) surfaces, i.e., (111), (110) and (100) in vapor and aqueous phases were studied using ab initio molecular dynamics simulations and density functional theory (DFT) calculations. Gibbs surface free energies as a function of temperature, water partial pressure, and water coverages were calculated using DFT based atomistic thermodynamic approach. On the basis of surface free energies, the morphology and exposed surface structures of the CeO2 nanoparticle were predicted using Wulff construction principle. It is found that the partially hydroxylated (111) and (100) are two major surface structures of CeO2 nanoparticles in vapor phase at ambient temperature (300 K). As the temperature increases, the fully dehydrated (111) surface gradually becomes the most dominant surface structure. While in aqueous phase, the exposed surface of the CeO2 nanoparticle is dominated by the hydroxylated (110) structure at 393 K. Finally, the morphology and stability of a cuboctahedron Pt13 nanocluster supported on CeO2 surfaces in both gas and aqueous phases were investigated. In gas phase, the supported Pt13 nanocluster has the tendency to wetting the CeO2 surface due to the strong metal-support interaction. The calculated interaction energies suggest the CeO2(110) surface provides the best stability for the Pt13 nanocluster. The CeO2 supported Pt13 nanoclusters are oxidized. Compared to the gas phase, the morphology of the CeO2 supported Pt13 nanocluster is less distorted due to the solvation effect provided by surrounding water molecules in aqueous phase. More electrons are transferred from the Pt13 nanocluster to the CeO2 support, implying the supported Pt13 nanocluster is further

  4. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

    Science.gov (United States)

    Wu, PeiTsen; Funato, Mitsuru; Kawakami, Yoichi

    2015-11-30

    Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 μm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

  5. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy

    Science.gov (United States)

    Wu, Peitsen; Funato, Mitsuru; Kawakami, Yoichi

    2015-11-01

    Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 μm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

  6. Vapor-phase and particulate-associated pesticides and PCB concentrations in eastern North Dakota air samples

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, S.B.; Miller, D.J.; Louie, P.K.K. [Univ. of North Dakota, Grand Forks, ND (United States)] [and others

    1996-05-01

    Vapor-phase and suspended particulate (<50 {mu}m) samples were collected on polyurethane foam (PUF) and quartz fiber filters in rural North Dakota to determine the air concentrations of pesticides in an area where agriculture is a primary source of semivolatile pollutants. Samples were collected at two sites from 1992 to 1994 that were at least 0.4 km from the nearest farmed fields and known application of pesticides, and analyzed for 22 different organochlorine, triazine, and acid herbicide pesticides. Fourteen pesticides were found above the detection limits (typically <1 pg/m{sup 3}). Concentrations of polychlorinated biphenyl (PCB) congeners were much lower (<50 pg/m{sup 3} in all cases) than many of the pesticides. These results demonstrate that pesticides are among the most prevalent chlorinated semivolatile pollutants present in rural North Dakota, that significant transport of pesticides occurs both in the vapor-phase and on suspended particulate matter, and that blown soil may be a significant mechanism for introducing pesticides into surface and ground waters. 32 refs., 2 figs., 4 tabs.

  7. Vapor-phase hydrothermal transformation of HTiOF3 intermediates into {001} faceted anatase single-crystalline nanosheets.

    Science.gov (United States)

    Liu, Porun; Wang, Yun; Zhang, Haimin; An, Taicheng; Yang, Huagui; Tang, Zhiyong; Cai, Weiping; Zhao, Huijun

    2012-12-07

    For the first time, a facile, one-pot hydrofluoric acid vapor-phase hydrothermal (HF-VPH) method is demonstrated to directly grow single-crystalline anatase TiO(2) nanosheets with 98.2% of exposed {001} faceted surfaces on the Ti substrate via a distinctive two-stage formation mechanism. The first stage produces a new intermediate crystal (orthorhombic HTiOF(3) ) that is transformed into anatase TiO(2) nanosheets during the second stage. The findings reveal that the HF-VPH reaction environment is unique and differs remarkably from that of liquid-phase hydrothermal processes. The uniqueness of the HF-VPH conditions can be readily used to effectively control the nanostructure growth. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Magmatic Vapor Phase Transport of Copper in Reduced Porphyry Copper-Gold Deposits: Evidence From PIXE Microanalysis of Fluid Inclusions

    Science.gov (United States)

    Rowins, S. M.; Yeats, C. J.; Ryan, C. G.

    2002-05-01

    Nondestructive proton-induced X-ray emission (PIXE) studies of magmatic fluid inclusions in granite-related Sn-W deposits [1] reveal that copper transport out of reduced felsic magmas is favored by low-salinity vapor and not co-existing high-salinity liquid (halite-saturated brine). Copper transport by magmatic vapor also has been documented in oxidized porphyry Cu-Au deposits, but the magnitude of Cu partitioning into the vapor compared to the brine generally is less pronounced than in the reduced magmatic Sn-W systems [2]. Consideration of these microanalytical data leads to the hypothesis that Cu and, by inference, Au in the recently established "reduced porphyry copper-gold" (RPCG) subclass should partition preferentially into vapor and not high-salinity liquid exsolving directly from fluid-saturated magmas [3-4]. To test this hypothesis, PIXE microanalysis of primary fluid inclusions in quartz-sulfide (pyrite, pyrrhotite & chalcopyrite) veins from two RPCG deposits was undertaken using the CSIRO-GEMOC nuclear microprobe. PIXE microanalysis for the ~30 Ma San Anton deposit (Mexico) was done on halite-saturated aqueous brine (deposit (W. Australia) was done on halite-saturated "aqueous" inclusions, which contain a small (deposits of the new RPCG subclass demonstrate the greater potential of these systems, compared to the classically oxidized porphyry Cu-Au systems, to transport Cu and probably precious metals in a magmatic aqueous vapor phase. These PIXE data also support the possibility that Cu partitions preferentially into an immiscible CO2-rich magmatic fluid. References: [1] Heinrich, C.A. et al. (1992) Econ. Geol., 87, 1566-1583. [2] Heinrich, C.A. et al. (1999) Geology, 27, 755-758. [3] Rowins, S.M. (2000) Geology, 28, 491-494. [4] Rowins, S.M. (2000) The Gangue, GAC-MDD Newsletter, 67, 1-7 (www.gac.ca). [5] Rowins, S.M. et al. (1993) Geol. Soc. Australia Abs., 34, 68-70.

  9. Thermal ionization and plasma state of high temperature vapor of UO2, Cs, and Na: Effect on the heat and radiation transport properties of the vapor phase

    International Nuclear Information System (INIS)

    Karow, H.U.

    1979-01-01

    The paper deals with the question how far the thermophysical state and the convective and radiative heat transport properties of vaporized reactor core materials are affected by the thermal ionization existing in the actual vapor state. The materials under consideration here are: nuclear oxide fuel (UO 2 ), Na (as the LMFBR coolant material), and Cs (alkaline fission product, partly retained in the fuel of the core zone). (orig./RW) [de

  10. Application of the Vapor-phase Multi-stage CMD Test to Characterize Contaminant Mass Discharge Associated with Volatile Organic Contaminant Sources in the Vadose Zone

    Science.gov (United States)

    Brusseau, M. L.; Mainhagu, J.; Morrison, C. N.; Carroll, K. C.

    2014-12-01

    Vapor-phase multi-stage contaminant mass discharge (CMD) tests were conducted at two field sites to measure mass discharge associated with contaminant sources located in the vadose zone. A CMD of 32 g/d was obtained for a site at which soil vapor extraction (SVE) has been in operation for approximately 6 years. The behavior exhibited for the vapor extractions conducted at this site suggests that there is unlikely to be a significant mass of non-vapor-phase contaminant (e.g., DNAPL, sorbed phase) present in the advective domains, and that most remaining mass is likely located in poorly accessible domains. Given the conditions for this site, this remaining mass is hypothesized to be associated with the low-permeability (and higher water saturation) region in the vicinity of the saturated zone and capillary fringe. This is supported by the results of a sediment-coring effort conducted prior to the CMD test. A CMD of 270 g/d was obtained for a site for which there were no prior SVE operations. The behavior exhibited for the vapor extractions conducted at this site suggest that non-vapor-phase contaminant mass (e.g., DNAPL) may be present in the advective domains. This is consistent with the results of prior characterization activities conducted at the site. Hence, the asymptotic conditions observed for this site most likely derive from a combination of rate-limited mass transfer from DNAPL (and sorbed) phases present in the advective domain as well as mass residing in lower-permeability ("non-advective") regions. The CMD values obtained from the tests were used in conjunction with a recently developed vapor-discharge tool to evaluate the impact of the measured CMDs on groundwater quality.

  11. Tank vapor sampling and analysis data package for tank 241-C-106 waste retrieval sluicing system process test phase III, sampled March 28, 1999

    International Nuclear Information System (INIS)

    LOCKREM, L.L.

    1999-01-01

    This data package presents sampling data and analytical results from the March 28, 1999, vapor sampling of Hanford Site single-shell tank 241-C-106 during active sluicing. Samples were obtained from the 296-C-006 ventilation system stack and ambient air at several locations. Characterization Project Operations (CPO) was responsible for the collection of all SUMMATM canister samples. The Special Analytical Support (SAS) vapor team was responsible for the collection of all triple sorbent trap (TST), sorbent tube train (STT), polyurethane foam (PUF), and particulate filter samples collected at the 296-C-006 stack. The SAS vapor team used the non-electrical vapor sampling (NEVS) system to collect samples of the air, gases, and vapors from the 296-C-006 stack. The SAS vapor team collected and analyzed these samples for Lockheed Martin Hanford Corporation (LMHC) and Tank Waste Remediation System (TWRS) in accordance with the sampling and analytical requirements specified in the Waste Retrieval Sluicing System Vapor Sampling and Analysis Plan (SAP) for Evaluation of Organic Emissions, Process Test Phase III, HNF-4212, Rev. 0-A, (LMHC, 1999). All samples were stored in a secured Radioactive Materials Area (RMA) until the samples were radiologically released and received by SAS for analysis. The Waste Sampling and Characterization Facility (WSCF) performed the radiological analyses. The samples were received on April 5, 1999

  12. Vapor phase synthesis and characterization of bimetallic alloy and supported nanoparticle catalysts

    Science.gov (United States)

    Abdelsayed, V.; Saoud, K. M.; El-Shall, M. Samy

    2006-08-01

    The laser vaporization controlled condensation (LVCC) technique coupled with a differential mobility analyzer (DMA) is used to synthesize size-selected alloy nanoparticles and nanoparticle catalyst systems. The formation of Au-Ag alloy nanoparticles is concluded from the observation of only one plasmon band. The maximum of the plasmon absorption is found to vary linearly with the gold mole fraction. For the Au-Pd system, the XRD data confirms the formation of the alloy nanoparticles with no evidence of any of the pure components. The Au/CeO2 nanoparticle catalyst prepared by the LVCC method is a promising catalyst for low temperature CO oxidation due to its high activity and stability.

  13. The Validation of Vapor Phase Hydrogen Peroxide Microbial Reduction for Planetary Protection and a Proposed Vacuum Process Specification

    Science.gov (United States)

    Chung, Shirley; Barengoltz, Jack; Kern, Roger; Koukol, Robert; Cash, Howard

    2006-01-01

    The Jet Propulsion Laboratory, in conjunction with the NASA Planetary Protection Officer, has selected the vapor phase hydrogen peroxide sterilization process for continued development as a NASA approved sterilization technique for spacecraft subsystems and systems. The goal is to include this technique, with an appropriate specification, in NPR 8020.12C as a low temperature complementary technique to the dry heat sterilization process.To meet microbial reduction requirements for all Mars in-situ life detection and sample return missions, various planetary spacecraft subsystems will have to be exposed to a qualified sterilization process. This process could be the elevated temperature dry heat sterilization process (115 C for 40 hours) which was used to sterilize the Viking lander spacecraft. However, with utilization of such elements as highly sophisticated electronics and sensors in modern spacecraft, this process presents significant materials challenges and is thus an undesirable bioburden reduction method to design engineers. The objective of this work is to introduce vapor hydrogen peroxide (VHP) as an alternative to dry heat microbial reduction to meet planetary protection requirements.The VHP process is widely used by the medical industry to sterilize surgical instruments and biomedical devices, but high doses of VHP may degrade the performance of flight hardware, or compromise material properties. Our goal for this study was to determine the minimum VHP process conditions to achieve microbial reduction levels acceptable for planetary protection.

  14. Modelling the flow and the two-phase science of heat inside a cross-section tube of a 'once through' vapor generator overheated with sodium

    International Nuclear Information System (INIS)

    Mutelle, H.

    1997-01-01

    Concerning the future fast neutrons reactors, studied in the frame of the European Fast Reactor (E.F.R.) project, several innovations have been proposed particularly in the field of vapor generators. These vapor generators have the particularity to use two different exchange fluids which can react violently one with the other. The thermodynamic fluid or secondary fluid is water under high pressure (18.5 MPa) which comes under saturated in the inlet of the device, warms and vaporizes inside the nest of boiler-tubes. At the outlet, vapor is overheated. The primary fluid is a liquid metal (sodium for French reactors) which flows outside the nest of boiler-tubes in the opposite direction of the secondary fluid. Several vapor generators models have been carried out. Concerning the European Fast Reactor project, the tubes have a cross-section and are in ferritic steel. Inside the boiler-tubes, the water-vapor flow can be divided into three areas. The first one is the liquid monophasic rate. It ends by the start of the boiling which is nucleated in the shell. Downstream, the two-phase flow passes from a bubbles flow to an annular flow. The liquid is then on the form of shell film and on the form of droplets carried along by the vapor flux. The dryout of the annular film is the start of the third area where there is vapor forced convection. At the present time, there is still no thermohydraulic code in the conditions of the E.F.R. vapor generator. In order to have a reliable size tool, the members of the E.F.R. project have then decided to do a two-phase flow model and have experimented a mono tubular scale model called ''ATLAS'' which represents well the real component for size, fluids and running conditions. The aim of the present work is then, in the frame of this experimental program, to 1)qualify the heat exchange and friction laws which will be later introduced in the thermohydraulic codes of cross-sections vapor generators 2)characterize the dryout phenomenon 3

  15. Metallated metal-organic frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Bury, Wojciech; Farha, Omar K.; Hupp, Joseph T.; Mondloch, Joseph E.

    2017-02-07

    Porous metal-organic frameworks (MOFs) and metallated porous MOFs are provided. Also provided are methods of metallating porous MOFs using atomic layer deposition and methods of using the metallated MOFs as catalysts and in remediation applications.

  16. Metallated metal-organic frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Bury, Wojciech; Farha, Omar K.; Hupp, Joseph T.; Mondloch, Joseph E.

    2017-08-22

    Porous metal-organic frameworks (MOFs) and metallated porous MOFs are provided. Also provided are methods of metallating porous MOFs using atomic layer deposition and methods of using the metallated MOFs as catalysts and in remediation applications.

  17. Characteristics of stimulated emission from optically pumped freestanding GaN grown by hydride vapor-phase epitaxy

    CERN Document Server

    Lee, M H; Kim, S T; Chung, S H; Moon, D C

    1999-01-01

    In this study, we observed optically pumped stimulated emission at room temperature in quasi-bulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and 1-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power density of I sub t sub h = 2 MW/cm sup 2 for one set of stimulated emissions.

  18. Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

    Science.gov (United States)

    Kanber, H.; Bar, S. X.; Norris, P. E.; Beckham, C.; Pacer, M.

    1994-02-01

    GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked 50 and 76 mm GaAs substrates by low pressure organometallic vapor phase epitaxy. Very smooth, featureless morphology and 100 percent selectivity of GaAs islands have been achieved over a range of growth conditions. Optimization of the GaAs p-buffer of the field effect transistor structure has led to improved device performance, including increased breakdown voltage. Device characteristics of the 0.5 μm gate low noise metal semiconductor field-effect transistors fabricated on these islands show good performance and wafer to wafer reproducibility on the second device lot.

  19. Vapor Chamber with Phase Change Material-based Wick Structure for Thermal Control of Manned Spacecraft, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In response to NASA SBIR solicitation H3.01 "Thermal Control for Future Human Exploration", Advanced Cooling Technologies, Inc. (ACT) is proposing a novel Phase...

  20. Vapor Chamber with Phase Change Material-Based Wick Structure for Thermal Control of Manned Spacecraft, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — During a NASA Phase I SBIR program, ACT addressed the need for light-weight, non-venting PCM heat storage devices by successfully demonstrating proof-of-concept of a...

  1. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  2. Synthesis of highly dispersed platinum particles on carbon nanotubes by an in situ vapor-phase method

    Energy Technology Data Exchange (ETDEWEB)

    Mercado-Zúñiga, C. [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Vargas-García, J.R., E-mail: rvargasga@ipn.mx [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Hernández-Pérez, M.A. [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Figueroa-Torres, M.Z. [Depto. Eco-Materiales y Energia, Univ. Autonoma de Nuevo Leon, Nuevo Leon 66450 (Mexico); Cervantes-Sodi, F. [Depto. Fisica y Matematicas, Univ. Iberoamericana, Mexico 01209 D.F. (Mexico); Torres-Martínez, L.M. [Depto. Eco-Materiales y Energia, Univ. Autonoma de Nuevo Leon, Nuevo Leon 66450 (Mexico)

    2014-12-05

    Highlights: • Highly dispersed Pt nanoparticles were prepared on functionalized carbon nanotubes. • A simple and competitive vapor-phase method was employed. • Carbonyl groups were assumed to be responsible for assisted decomposition of Pt-acac. • Pt particles were highly dispersed because carbonyl groups served as reaction sites. • Particles of 2.3 nm in size were highly dispersed even the high loading (27 wt%Pt). - Abstract: Highly dispersed Pt nanoparticles were prepared on functionalized multi-walled carbon nanotubes (f-MWCNTs) using a simple in situ vapor-phase method. The method consisted in two-step procedure in which an initial mixture of Pt precursor (Pt-acac) and f-MWCNTs was heated in a quartz tube reactor, first at 180 °C and then at 400 °C. Fourier transform infrared spectroscopy (FTIR–ATR), thermal gravimetric analysis (TGA) and X-ray diffraction (XRD) were used to follow the chemical and structural transformations of mixture components during heating steps. The functionalization of MWCNTs with HNO{sub 3}/H{sub 2}SO{sub 4} solution resulted in formation of surface carbonyl groups. The FTIR–ATR and XRD results indicated that individual Pt-acac withstood heating at 180 °C, whereas it was dissociated when heated in contact with f-MWCNTs at the same temperature. Thus, the functional carbonyl groups were found to be responsible for assisted decomposition of Pt-acac at 180 °C. Since carbonyl groups served as reaction sites for decomposition of Pt-acac, the resulting particles were highly and homogeneously dispersed on the surface of MWCNTs even the relatively high metallic loading of 27 wt%. TEM observations revealed that crystalline Pt particles exhibit narrow size distribution with a mean size of 2.3 nm.

  3. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Catledge, Shane A., E-mail: catledge@uab.edu

    2016-02-28

    Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W{sub 2}CoB{sub 2}. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W{sub 2}CoB{sub 2} with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  4. Novel Solid State Lasers for Space-Based Water Vapor DIAL, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase II program will develop novel laser transmitters needed for planned airborne and space-based active remote sensing missions. This program will build on...

  5. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  6. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  7. Infrared and photoelectron spectroscopy study of vapor phase deposited poly (3-hexylthiophene)

    International Nuclear Information System (INIS)

    Wei Haoyan; Scudiero, L.; Eilers, Hergen

    2009-01-01

    Poly (3-hexylthiophene) (P3HT) was thermally evaporated and deposited in vacuum. Infrared spectroscopy was used to confirm that the thin films were indeed P3HT, and showed that in-situ thermal evaporation provides a viable route for contaminant-free surface/interface analysis of P3HT in an ultrahigh-vacuum (UHV) environment. Ultraviolet photoelectron spectroscopy (UPS) as well as X-ray photoelectron spectroscopy (XPS) experiments were carried out to examine the frontier orbitals and core energy levels of P3HT thin films vapor deposited in UHV on clean polycrystalline silver (Ag) surfaces. UPS spectra enable the determination of the vacuum shift at the polymer/metal interface, the valence band maximum (VBM), and the energy of the π-band of the overlayer film. The P3HT vacuum level decreased in contrast to that of the underlying Ag as the film thickness increased. XPS and UPS data confirmed the chemical integrity (stoichiometry) of the polymer at high coverage, as well as the shift of the C 1s and S 2p binding energy peaks and the secondary-electron edge with increasing film thickness, indicating that band bending is present at the P3HT/Ag interface and that the measured onset of the valence band is about 0.8 ± 0.05 eV relative to the Fermi level.

  8. InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhao, Yi; Xue, Jun Shuai; Zhang, Jin Cheng; Zhou, Xiao Wei; Zhang, Ya Chao; Hao, Yue

    2015-01-01

    A nearly lattice-matched InAlN/InGaN/GaN double heterostructure (DH) and traditional InAlN/GaN single heterostructure (SH) were grown by metal–organic chemical vapor deposition. The InN mole fraction of InGaN channel was deduced by XRD and photoluminescence. The electrical properties were characterized by capacitance-voltage and temperature-dependent Hall measurements. Both results revealed that the InAlN/InGaN/GaN DH possessed superior carrier confinement over traditional InAlN/GaN SH owing to the back barrier formed at the InGaN/GaN interface, which prevents the spilling over of carriers and thus remarkably improves the transport performance at high temperature. Furthermore, a thin InGaN layer was preferable for carrier channel applications to a thick one. (paper)

  9. Low-resistivity, high-transmittance Ga:ZnO films prepared through metalorganic chemical vapor deposition using an inexpensive solution of diethylzinc in n-hexane as the Zn precursor

    Science.gov (United States)

    Giang Nguyen, Nam; Thanh Ho, Van Thi; Hong, Lu-Sheng

    2013-05-01

    In this study, we prepared Ga-doped ZnO (GZO) films with qualified opto-electric properties through chemical vapor deposition of an inexpensive solution of diethylzinc in n-hexane (ca. 17 wt. %). The GZO films exhibited low resistivity (3.61 × 10-4 Ω cm) and high transmittance (85%) in the visible range. Interestingly, post-annealing treatment of the GZO films under N2 at 525 °C for just 10 min increased the number of carbon-interstitial oxygen defects (CZn + 2Oi)″, which played the role of acceptors and enhanced the film properties significantly. This approach potentially allows the fabrication of inexpensive transparent conducting oxides for use in solar cells.

  10. Measurement of vapor-liquid-liquid phase equilibrium-Equipment and results

    DEFF Research Database (Denmark)

    Frost, Michael Grynnerup; von Solms, Nicolas; Richon, Dominique

    2015-01-01

    + n-hexane + methanol + water at 296.2 K and pressures of 6 to 10 MPa. The Cubic-Plus-Association (CPA) equation of state is used to model the phase equilibria data measured. A good agreement between predictions and experimental data is observed, supporting the reliability of the new data. (C) 2015...

  11. Fast screening method for assessment of antimicrobial activity of essential oils in vapor phase

    Czech Academy of Sciences Publication Activity Database

    Klouček, P.; Šmíd, J.; Franková, A.; Kokoska, L.; Valterová, Irena; Pavela, R.

    2012-01-01

    Roč. 47, č. 2 (2012), s. 161-165 ISSN 0963-9969 Grant - others:GA ČR(CZ) GP525/09/P503 Institutional research plan: CEZ:AV0Z40550506 Keywords : antibacterial * gas phase * antifungal * fumigation Subject RIV: CC - Organic Chemistry Impact factor: 3.005, year: 2012

  12. Zirconium-based highly porous metal-organic framework (MOF-545) as an efficient adsorbent for vortex assisted-solid phase extraction of lead from cereal, beverage and water samples.

    Science.gov (United States)

    Tokalıoğlu, Şerife; Yavuz, Emre; Demir, Selçuk; Patat, Şaban

    2017-12-15

    In this study, zirconium-based highly porous metal-organic framework, MOF-545, was synthesized and characterized. The surface area of MOF-545 was found to be 2192m 2 /g. This adsorbent was used for the first time as an adsorbent for the vortex assisted-solid phase extraction of Pb(II) from cereal, beverage and water samples. Lead in solutions was determined by FAAS. The optimal experimental conditions were as follows: the amount of MOF-545, 10mg; pH of sample, 7; adsorption and elution time, 15min; and elution solvent, 2mL of 1molL -1 HCl. Under the optimal conditions of the method, the limit of detection, preconcentration factor and precision as RSD% were found to be 1.78μgL -1 , 125 and 2.6%, respectively. The adsorption capacity of the adsorbent for lead was found to be 73mgg -1 . The method was successfully verified by analyzing two certified reference materials (BCR-482 Lichen and SPS-WW1 Batch 114) and spiked chickpea, bean, wheat, lentil, cherry juice, mineral water, well water and wastewater samples. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Preparation of water stable methyl-modified metal-organic framework-5/polyacrylonitrile composite nanofibers via electrospinning and their application for solid-phase extraction of two estrogenic drugs in urine samples.

    Science.gov (United States)

    Asiabi, Mina; Mehdinia, Ali; Jabbari, Ali

    2015-12-24

    The nanofibers of methyl-modified metal-organic framework-5/polyacrylonitrile composite (CH3MOF-5/PAN) were successfully synthesized and used as a solid-phase extraction (SPE) sorbent for pre-concentration of two estrogenic drugs, levonorgestrel and megestrol acetate, in urine samples. A simple, cheap and accessible electrospinning method was employed to prepare a water stable CH3MOF-5/PAN composite. The nanofibers were packed into the mini-disc cartridges to be used as SPE devices. They were also characterized by scanning electron microscopy, thermogravimetric analysis, Fourier transform infrared spectroscopy, X-ray diffraction and N2 adsorption-desorption experiments. The effects of different parameters influencing the extraction efficiency including the type of eluent and its volume, the amount of the sorbent, pH, the ionic strength, the sample volume and the reusability of the sorbent were investigated and optimized. Under the optimized conditions, the linearity varied in range of 0.05-100μgL(-1) with R(2) values higher than 0.999. The limit of detection for both of the analytes was 0.02μgL(-1). The applicability of the method was examined by analyzing the analytes in the urine samples. The recovery of the analytes varied in the range of 82.8-94.8% which shows capability of the method for the determination of the drugs in the urine samples. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. The influence of operating conditions on the efficiency of vapor phase hydrogen peroxide in the degradation of 4-(dimethylamino)benzaldehyde

    Czech Academy of Sciences Publication Activity Database

    Švrček, J.; Marhoul, A.; Kačer, P.; Kuzma, Marek; Pánek, L.; Červený, L.

    2010-01-01

    Roč. 81, č. 5 (2010), s. 617-625 ISSN 0045-6535 R&D Projects: GA MPO FT-TA4/071 Institutional research plan: CEZ:AV0Z50200510 Keywords : Vapor phase hydrogen peroxide * Degradation * Chemical contaminants Subject RIV: EE - Microbiology, Virology Impact factor: 3.155, year: 2010

  15. Vapor phase spectra and the pressure-temperature dependence of long-chain carboxyllic acids studied by a CO laser and the photoacoustic heat-pipe detector.

    NARCIS (Netherlands)

    Jalink, H.; Bicanic, D.; Franko, M.; Bozoki, Z.

    1995-01-01

    A resonant photoacoustic heat-pipe (PAHP) cell was constructed and used for spectral studies of four long-chain saturated fatty acids (C10:0 to C16:0) at CO laser wavelengths and temperatures above that of the ambient. Vapor-phase absorption spectra were recorded at temperatures of 383 K for capric

  16. Fabrication of single-phase ε-GaSe films on Si(100) substrate by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chang, Chia-Chen; Zeng, Jia-Xian; Lan, Shan-Ming; Uen, Wu-Yih; Liao, Sen-Mao; Yang, Tsun-Neng; Ma, Wei-Yang; Chang, Kuo-Jen

    2013-01-01

    Single-phase ε-gallium selenide (GaSe) films were fabricated on Si(100) substrate by metal organic chemical vapor deposition using dual-source precursors: triethylgallium (TEG) and hydrogen selenide (H 2 Se) with the flow ratio of [H 2 Se]/[TEG] being maintained at 1.2. In particular, an arsine (AsH 3 ) flow was introduced to the Si substrate before the film deposition to induce an arsenic (As)-passivation effect on the substrate. The crystalline structure of GaSe films prepared was analyzed using X-ray diffraction and the surface morphology of them was characterized by scanning electron microscopy. It was found that the film quality could be improved by the As-passivation effect. The optical properties of the films were studied by temperature dependent photoluminescence (PL) measurements. PL spectra obtained with different distributions and intensities favored for resolving the superior material quality of the films produced on the substrate with As-passivation compared to those produced on the substrate without As-passivation. The former was dominated by the excitonic emissions for the whole temperature range of 20–300 K examined, while the latter was initially dominated by the defect-related emission at 1.907 eV for a low-temperature range ≦ 80 K and then became dominated by the weak excitonic emission band instead. The ε modification of GaSe films prepared was further recognized by the Raman scattering measurements conducted at room temperature. - Highlights: • Gallium selenide (GaSe) layered structures are fabricated on Si(100) substrate. • Metal–organic chemical vapor deposition is used for film fabrication. • Arsenic-passivation effects of Si substrate on the GaSe film quality are analyzed. • Photoluminescence measurements of GaSe polycrystals are reported

  17. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2004-09-11

    This report summarizes work performed on this project from April 2004 through September 2004. Our previous work demonstrated that a polyurethane foam biofilter could successfully biodegrade the BTEX contaminants found in the SMZ regeneration waste gas stream. However, establishing the biomass on the polyurethane foam packing was relatively time consuming and daily recirculation of a concentrated nutrient solution was required for efficient operation of the foam biofilter. To simplify the start up and operating requirements of the biofilter system, a simple, compost-based biofilter was investigated for its ability to treat the BTEX contaminants generated during the SMZ regeneration process. The investigation of the compost biofilter was divided into three experimental phases that spanned 180 days of biofilter operation. During Phase 1, the biofilter was continuously supplied a BTEX-contaminated waste gas stream. During Phase 2, a series of periodic shutdown tests were conducted to assess how the biofilter responded when the BTEX feed was discontinued for periods ranging from 1 day to 2.8 days. The Phase 3 experiments focused on determining how the biofilter would handle periodic spikes in inlet BTEX concentration as would be expected when it is coupled with an SMZ column. Results from the continuous feed (Phase 1) experiments demonstrated that the compost biofilter could maintain BTEX removals of greater than 98% within two weeks of startup. Results of the shutdown experiments indicated that benzene removal was the most sensitive to interruptions in the BTEX feed. Nevertheless, the BTEX removal efficiency exceeded 95% within 6 hours of reestablishing the BTEX feed to the biofilter. When the biofilter was subjected to periodic spikes in BTEX concentration (Phase 3), it was found that the total BTEX removal efficiency stabilized at approximately 75% despite the fact that the biofilter was only fed BTEX contaminants 8 hours per day. Finally, the effects of nutrient

  18. Synthesis of TiO2 Nanoparticles from Ilmenite Through the Mechanism of Vapor-Phase Reaction Process by Thermal Plasma Technology

    Science.gov (United States)

    Samal, Sneha

    2017-11-01

    Synthesis of nanoparticles of TiO2 was carried out by non-transferred arc thermal plasma reactor using ilmenite as the precursor material. The powder ilmenite was vaporized at high temperature in plasma flame and converted to a gaseous state of ions in the metastable phase. On cooling, chamber condensation process takes place on recombination of ions for the formation of nanoparticles. The top-to-bottom approach induces the disintegration of complex ilmenite phases into simpler compounds of iron oxide and titanium dioxide phases. The vapor-phase reaction mechanism was carried out in thermal plasma zone for the synthesis of nanoparticles from ilmenite compound in a plasma reactor. The easy separation of iron particles from TiO2 was taken place in the plasma chamber with deposition of light TiO2 particles at the top of the cooling chamber and iron particles at the bottom. The dissociation and combination process of mechanism and synthesis are studied briefly in this article. The product TiO2 nanoparticle shows the purity with a major phase of rutile content. TiO2 nanoparticles produced in vapor-phase reaction process shows more photo-induced capacity.

  19. Microphase-Separated PE/PEO Thin Films Prepared by Plasma-Assisted Vapor Phase Deposition.

    Science.gov (United States)

    Choukourov, Andrei; Gordeev, Ivan; Ponti, Jessica; Uboldi, Chiara; Melnichuk, Iurii; Vaidulych, Mykhailo; Kousal, Jaroslav; Nikitin, Daniil; Hanyková, Lenka; Krakovský, Ivan; Slavínská, Danka; Biederman, Hynek

    2016-03-01

    Immiscible polymer blends tend to undergo phase separation with the formation of nanoscale architecture which can be used in a variety of applications. Different wet-chemistry techniques already exist to fix the resultant polymeric structure in predictable manner. In this work, an all-dry and plasma-based strategy is proposed to fabricate thin films of microphase-separated polyolefin/polyether blends. This is achieved by directing (-CH2-)100 and (-CH2-CH2-O-)25 oligomer fluxes produced by vacuum thermal decomposition of poly(ethylene) and poly(ethylene oxide) onto silicon substrates through the zone of the glow discharge. The strategy enables mixing of thermodynamically incompatible macromolecules at the molecular level, whereas electron-impact-initiated radicals serve as cross-linkers to arrest the subsequent phase separation at the nanoscale. The mechanism of the phase separation as well as the morphology of the films is found to depend on the ratio between the oligomeric fluxes. For polyolefin-rich mixtures, polyether molecules self-organize by nucleation and growth into spherical domains with average height of 22 nm and average diameter of 170 nm. For equinumerous fluxes and for mixtures with the prevalence of polyethers, spinodal decomposition is detected that results in the formation of bicontinuous structures with the characteristic domain size and spacing ranging between 5 × 10(1) -7 × 10(1) nm and 3 × 10(2)-4 × 10(2) nm, respectively. The method is shown to produce films with tunable wettability and biologically nonfouling properties.

  20. Atomic layer epitaxy of compound semiconductors with metalorganic precursors

    Science.gov (United States)

    DenBaars, S. P.; Dapkus, P. D.

    1989-11-01

    Atomic layer epitaxy (ALE) is a relatively new growth technology for depositing compound semiconductors one monolayer at a time. By employing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is formed in every cycle of the deposition. The use of metalorganic precursors for ALE is of considerable importance since it allows the hybridization of ALE with the existing MOCVD technique. Several benefits can be realized by integrating the two technologies. Layers of critical thickness and uniformity requirements can be grown by ALE, while thicker epitaxial layers can be grown by MOCVD. Additional advantages are the "digital growth" nature of ALE which affords a high degree of thickness reproducibility, and the selective area growth potential of laser-assisted ALE (LALE). In this paper, ALE and LALE of GaAs is reviewed with an emphasis on the utilization of metalorganic precursors.

  1. An Ising model for metal-organic frameworks

    Science.gov (United States)

    Höft, Nicolas; Horbach, Jürgen; Martín-Mayor, Victor; Seoane, Beatriz

    2017-08-01

    We present a three-dimensional Ising model where lines of equal spins are frozen such that they form an ordered framework structure. The frame spins impose an external field on the rest of the spins (active spins). We demonstrate that this "porous Ising model" can be seen as a minimal model for condensation transitions of gas molecules in metal-organic frameworks. Using Monte Carlo simulation techniques, we compare the phase behavior of a porous Ising model with that of a particle-based model for the condensation of methane (CH4) in the isoreticular metal-organic framework IRMOF-16. For both models, we find a line of first-order phase transitions that end in a critical point. We show that the critical behavior in both cases belongs to the 3D Ising universality class, in contrast to other phase transitions in confinement such as capillary condensation.

  2. Development of Hybrid Models for a Vapor-Phase Fungi Bioreactor

    Directory of Open Access Journals (Sweden)

    Giorgia Spigno

    2015-01-01

    Full Text Available This study is aimed at the development of a model for an experimental vapour-phase fungi bioreactor, which could be derived in a simple way using the available measurements of a pilot-plant reactor, without the development of ad hoc experiments for the evaluation of fungi kinetics and the estimation of parameters related to biofilm characteristics. The proposed approach is based on hybrid models, obtained by the connection of the mass balance equation (used in traditional phenomenological models with a feedforward neural network (used in black-box modelling, and the proper use of statistical tools for the model assessment and system understanding. Two different hybrid models were developed and compared by proper performance indexes, and their capability to predict the biological complex phenomena was demonstrated and compared to that of a first-principle model.

  3. Wave-mixing-induced transparency with zero phase shift in atomic vapors

    Science.gov (United States)

    Zhou, F.; Zhu, C. J.; Li, Y.

    2017-12-01

    We present a wave-mixing induced transparency that can lead to a hyper-Raman gain-clamping effect. This new type of transparency is originated from a dynamic gain cancellation effect in a multiphoton process where a highly efficient light field of new frequency is generated and amplified. We further show that this novel dynamic gain cancellation effect not only makes the medium transparent to a probe light field at appropriate frequency but also eliminates the probe field propagation phase shift. This gain-cancellation-based induced transparency holds for many potential applications on optical communication and may lead to effective suppression of parasitic Raman/hyper-Raman noise field generated in high intensity optical fiber transmissions.

  4. Automatic regulation of liquid- and vapor-phase chambers in hydrogenation at the Leuna Plant

    Energy Technology Data Exchange (ETDEWEB)

    1944-01-23

    A chronological survey is given of the development and implementation of automatic regulation at Leuna. The first such apparatus introduced was a regulator for liquid level in a vessel used for allowing gases to escape from the sludge coming from the product separator of liquid-phase hydrogenation of brown coal. Next was developed a compressed-air-operated regulator for liquid level in the product separator itself. Next came a time-and-temperature regulated automatic valve for removing sand from oven I of the liquid-phase chambers. In order to measure and regulate the flow of liquid product under high pressure, there was developed a meter combining electric-pneumatic and photoelectric elements together with a specially-developed membrane-regulated valve structure, which seemed to be a great improvement in accuracy and dependability over previous valve structures. The electric-pneumatic valve apparatus mentioned above was also used in regulating reaction-oven temperature by regulating the rate of injection of cold gas into the oven to reduce the temperature built up by the exothermic reaction; temperature measurement was done by resistance thermometers. Another use for the electric-pneumatic valve apparatus was in the regulation of liquid level in intermediate seprator vessels; an improved design for cartridge valves was involved in such regulators. The arrangement of certain similar components of these regulators in a central location together with simple compressed-air connections to other operating components of the separate regulators is described. The compressed-air system using several different pressures used to operatethe regulators, is also considered. 10 diagrams, 1 table.

  5. Study of the Vapor Phase Over Fusarium Fungi Cultured on Various Substrates.

    Science.gov (United States)

    Savelieva, Elena I; Gustyleva, Liudmila K; Kessenikh, Elizaveta D; Khlebnikova, Natalya S; Leffingwell, John; Gavrilova, Olga P; Gagkaeva, Tatiana Yu

    2016-07-01

    The compositions of volatile organic compounds (VOCs) emitted by Fusarium fungi (F. langsethiae, F. sibiricum, F. poae, and F. sporotrichioides) grown on two nutritive substrates: potato sucrose agar (PSA) and autoclaved wheat kernels (WK) were investigated. The culturing of fungi and study of their VOC emissions were performed in chromatographic vials at room temperature (23 - 24 °C) and the VOCs were sampled by a solid-phase microextraction on a 85 μm carboxen/polydimethylsiloxane fiber. GC/MS was performed using a 60-m HP-5 capillary column. Components of the VOC mixture were identified by electron impact mass spectra and chromatographic retention indices (RIs). The most abundant components of the VOC mixture emitted by Fusarium fungi are EtOH, AcOH, (i) BuOH, 3-methylbutan-1-ol, 2-methylbutan-1-ol, ethyl 3-methylbutanoate, terpenes with M 136, sesquiterpenes with M 204 (a total of about 25), and trichodiene. It was found that the strains grown on PSA emit a wider spectrum and larger amount of VOCs compared with those grown on wheat kernels. F. langsethiae strain is the most active VOC producer on both substrates. The use of SPME and GC/MS also offers the potential for differentiation of fungal species and strains. © 2016 Wiley-VHCA AG, Zürich.

  6. Synthesis of Fe3O4/C/TiO2 Magnetic Photocatalyst via Vapor Phase Hydrolysis

    Directory of Open Access Journals (Sweden)

    Fuzhi Shi

    2012-01-01

    Full Text Available A core/multi-shell-structured Fe3O4/C/TiO2 magnetic photocatalyst is prepared via vapor phase hydrolysis process. The as-synthesized core/multi-shell-structured composite is characterized by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, high-resolution electron microscopy (HRTEM, N2 adsorption-desorption isotherm analyses, vibrating sample magnetometer (VSM, and ultraviolet-visible (UV-Vis absorption spectroscopy. TEM and HRTEM show that well-crystallized anatase TiO2 nanocrystals are immobilized on the surface of as-prepared Fe3O4/C microspheres with dimensions around 200 nm. N2 adsorption-desorption isotherm analysis shows that the obtained photocatalyst exists disorderedly mesoporous structure. The photocatalytic efficiency of the catalyst in degradation of methylene blue is evaluated, and the Fe3O4/C/TiO2 photocatalyst with low TiO2 content (37% has a relatively higher activity than commercial anatase TiO2. The intermediate carbon layer avoids the photodissolution of Fe3O4 effectively, and the recycling property is largely improved due to the existence of magnetic Fe3O4 core.

  7. Stable Deep Doping of Vapor-Phase Polymerized Poly(3,4-ethylenedioxythiophene)/Ionic Liquid Supercapacitors.

    Science.gov (United States)

    Karlsson, Christoffer; Nicholas, James; Evans, Drew; Forsyth, Maria; Strømme, Maria; Sjödin, Martin; Howlett, Patrick C; Pozo-Gonzalo, Cristina

    2016-08-23

    Liquid-solution polymerization and vapor-phase polymerization (VPP) have been used to manufacture a series of chloride- and tosylate-doped poly(3,4-ethylenedioxythiophene) (PEDOT) carbon paper electrodes. The electrochemistry, specific capacitance, and specific charge were determined for single electrodes in 1-ethyl-3-methylimidazolium dicyanamide (emim dca) ionic liquid electrolyte. VPP-PEDOT exhibits outstanding properties with a specific capacitance higher than 300 F g(-1) , the highest value reported for a PEDOT-based conducting polymer, and doping levels as high as 0.7 charges per monomer were achieved. Furthermore, symmetric PEDOT supercapacitor cells with the emim dca electrolyte exhibited a high specific capacitance (76.4 F g(-1) ) and high specific energy (19.8 Wh kg(-1) ). A Ragone plot shows that the VPP-PEDOT cells combine the high specific power of conventional ("pure") capacitors with the high specific energy of batteries, a highly sought-after target for energy storage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

    2018-04-01

    We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

  9. Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy

    Science.gov (United States)

    Kimura, Taishi; Aoki, Yuko; Horibuchi, Kayo; Nakamura, Daisuke

    2016-12-01

    The work reported herein demonstrated that nanopipes can be formed via a surfactant effect, in which boron impurities preferentially migrate to semipolar and nonpolar facets. Approximately 3 μm-thick GaN layers were grown using halogen-free vapor phase epitaxy. All layers grown in pyrolytic boron nitride (pBN) crucibles were found to contain a high density of nanopipes in the range of 1010 to 1011 cm-2. The structural properties of these nanopipes were analyzed by X-ray rocking curve measurements, transmission electron microscopy, and three-dimensional atom probe (3DAP) tomography. The resulting 3DAP maps showed nanopipe-sized regions of boron segregation, and these nanopipes were not associated with the presence of dislocations. A mechanism for nanopipe formation was developed based on the role of boron as a surfactant and considering energy minima. A drastic reduction in the nanopipe density was achieved upon replacing the pBN crucibles with tantalum carbide-coated carbon crucibles. Consequently, we have confirmed that nanopipes can be formed solely due to surface energy changes induced by boron impurity surface segregation. For this reason, these results also indicate that nanopipes should be formed by other surfactant impurities such as Mg and Si.

  10. Selective determination of penicillamine by on-line vapor-phase generation combined with Fourier transform infrared spectrometry.

    Science.gov (United States)

    Zeeb, Mohsen; Ganjali, Mohammad Reza; Norouzi, Parviz; Moeinossadat, Seyyed Rezvan

    2009-04-30

    In this work, an on-line system with vapor-phase generation (VPG) and Fourier transform infrared (FTIR) spectrometric detection has been developed as a direct and highly selective analytical technique for the assay of penicillamine (PA). Potassium iodate solution was injected into a reactor, heated at 75 degrees C, containing PA. The CO generated under these conditions was transported by means of N(2) gas carrier stream to an infrared gas cell and corresponding FTIR spectra were acquired in a continuous mode. The maximum absorbance of CO band at 2170 cm(-1), corrected by a baseline established between 2240 and 2000 cm(-1) at a nominal resolution of 2 cm(-1), was selected as a measurement criterion. Initially, the effect of different chemical, physical and spectroscopic parameters, such as concentration and volume of oxidant, pH, equilibrium time, reactor temperature, reactor volume, N(2) carrier flow rate and number of scans on the analytical signals were evaluated by using a short path length (10 cm) IR gas cell. At optimum experimental conditions, the method provided a relatively broad linear dynamic range of 4-380 mg L(-1), a limit of detection of 0.5 mg L(-1), a sampling frequency of 15 h(-1) and a relative standard deviation (R.S.D.) of 1.6%. Further, the method was successfully applied to the determination of PA in pharmaceutical formulations and results compared well with those obtained by a reference colorimetric method.

  11. Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

    Science.gov (United States)

    Bae, Sung Geun; Jeon, Injun; Jeon, Hunsoo; Kim, Kyoung Hwa; Yang, Min; Yi, Sam Nyung; Lee, Jae Hak; Ahn, Hyung Soo; Yu, Young Moon; Sawaki, Nobuhiko; Kim, Suck-Whan

    2018-01-01

    We prepared InGaN light-emitting diodes (LEDs) with the active layers grown from a mixed source of Ga–In–N materials on an n-type GaN substrate by a selective-area growth method and three fabrication steps: photolithography, epitaxial layer growth, and metallization. The preparation followed a previously developed experimental process using apparatus for mixed-source hydride vapor-phase epitaxy (HVPE), which consisted of a multi-graphite boat, for insulating against the high temperature and to control the growth rate of epilayers, filled with the mixed source on the inside and a radio-frequency (RF) heating coil for heating to a high temperature (T > 900 °C) and for easy control of temperature outside the source zone. Two types of LEDs were prepared, with In compositions of 11.0 and 6.0% in the InGaN active layer, and room-temperature electroluminescence measurements exhibited a main peak corresponding to the In composition at either 420 or 390 nm. The consecutive growth of InGaN LEDs by the mixed-source HVPE method provides a technique for the production of LEDs with a wide range of In compositions in the active layer.

  12. Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

    2007-08-01

    The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

  13. Highly Ordered Boron Nitride Nanotube Arrays with Controllable Texture from Ammonia Borane by Template-Aided Vapor-Phase Pyrolysis

    Directory of Open Access Journals (Sweden)

    Yuting Wang

    2008-01-01

    Full Text Available An efficient approach for the preparation of good-quality boron nitride nanotubes (BNNTs is developed. BNNTs with specific texture were prepared from ammonia borane (BH3NH3 by vapor-phase pyrolysis with the aid of a template in two independent temperature-controlled furnaces. Two kinds of BNNTs, 200–300 nm wide ×60 μm long and 70–80 nm wide ×40 μm long, were produced after removal of the templates. The as-produced BNNTs were heated at different temperatures in the range of 1300–1700°C in NH3. FT-IR and XPS results confirmed the formation of BN from BH3NH3. Ordered arrays of BNNTs without cracks on the surface were seen using microstructural observations. The diameter and length of the BNNTs are controlled using templates with different pore sizes and thickness. The wall thickness of the nanotubes was increased by increasing the number of deposition cycles. The crystallinity of the BNNTs was improved by heating at a high temperature (1700°C in NH3.

  14. A mechanistic study on the reaction pathways leading to benzene and naphthalene in cellulose vapor phase cracking

    International Nuclear Information System (INIS)

    Norinaga, Koyo; Yang, Huamei; Tanaka, Ryota; Appari, Srinivas; Iwanaga, Keita; Takashima, Yuka; Kudo, Shinji; Shoji, Tetsuya; Hayashi, Jun-ichiro

    2014-01-01

    The reaction pathways leading to aromatic hydrocarbons such as benzene and naphthalene in gas-phase reactions of multi-component mixtures derived from cellulose fast pyrolysis were studied both experimentally and numerically. A two-stage tubular reactor was used for evaluating the reaction kinetics of secondary vapor phase cracking of the nascent pyrolysates at temperature ranging from 400 to 900 °C, residence time from 0.2 to 4.3 s, and at 241 kPa. The products of alkyne and diene were identified from the primary pyrolysis of cellulose even at low temperature range 500–600 °C. These products include acetylene, propyne, propadiene, vinylacetylene, and cyclopentadiene. Experiments were also numerically validated by a detailed chemical kinetic model consisting of more than 8000 elementary step-like reactions with over 500 chemical species. Acceptable capabilities of the kinetic model in predicting concentration profiles of the products enabled us to assess reaction pathways leading to benzene and naphthalene via the alkyne and diene from primary pyrolysates of cellulose. C 3 alkyne and diene are primary precursors of benzene at 650 °C, while combination of ethylene and vinylacetylene produces benzene dominantly at 850 °C. Cyclopentadiene is a prominent precursor of naphthalene. Combination of acetylene with propyne or allyl radical leads to the formation of cyclopentadiene. Furan and acrolein are likely important alkyne precursors in cellulose pyrolysis at low temperature, whereas dehydrogenations of olefins are major route to alkyne at high temperatures. - Highlights: • Analytical pyrolysis experiments provided data for kinetic modeling. • Detailed chemical kinetic model was used and evaluated. • Alkyne and diene were important intermediates for aromatic hydrocarbon formation. • Reaction pathways leading to aromatic hydrocarbons were proposed

  15. Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy

    Science.gov (United States)

    Lee, Dongjin; Jeon, H. C.; Kang, T. W.; Kumar, Sunil

    2018-03-01

    Indium tin oxide (ITO) is a suitable candidate for smart windows and bifacial semi-transparent solar cell applications. In this study, highly crystalline CuInGaSe2 (CIGS) nanowires were successfully grown by horizontal-type vapor phase epitaxy on an ITO substrate. Length, diameter, and density of the nanowires were studied by varying the growth temperature (500, 520, and 560 °C), time (3.5, 6.5, and 9.5 h), and type of catalyst (In, Au, and Ga). Length, diameter, and density of the nanowires were found to be highly dependent on the growth conditions. At an optimized growth period and temperature of 3.5 h and 520 °C, respectively, the length and diameter of the nanowires were found to increase when grown in a catalyst-free environment. However, the density of the nanowires was found to be higher while using a catalyst during growth. Even in a catalyst-free environment, an Indium cluster formed at the bottom of the nanowires. The source of these nanowires is believed to be Indium from the ITO substrate which was observed in the EDS measurement. TEM-based EDS and line EDS indicated that the nanowires are made up of CIGS material with a very low Gallium content. XRD measurements also show the appearance of wurtzite CIS nanowires grown on ITO in addition to the chalcopyrite phase. PL spectroscopy was done to see the near-band-edge emission for finding band-to-band optical transition in this material. Optical response of the CIGS nanowire network was also studied to see the photovoltaic effect. This work creates opportunities for making real solar cell devices in superstrate configuration.

  16. A novel metal-organic framework composite MIL-101(Cr)@GO as an efficient sorbent in dispersive micro-solid phase extraction coupling with UHPLC-MS/MS for the determination of sulfonamides in milk samples.

    Science.gov (United States)

    Jia, Xiuna; Zhao, Pan; Ye, Xiu; Zhang, Lianjun; Wang, Ting; Chen, Qinyu; Hou, Xiaohong

    2017-07-01

    As a novel material, metal-organic framework/graphite oxide (MIL-101(Cr)@GO) has great potential for the pretreatment of trace analytes. In the present study, MIL-101(Cr)@GO was synthesized using a solvothermal synthesis method at the nanoscale and was applied as sorbent in the dispersive micro-solid phase extraction (DMSPE) for the enrichment of the trace sulfonamides (SAs) from milk samples for the first time. Several experimental parameters including kinds of sorbents, the effect of pH, the amount of MIL-101(Cr)@GO, ionic strength, adsorption time, desorption solvent and desorption time were investigated. Under the optimal conditions, the linear ranges were from 0.1 to 10μg/L, 0.2-20μg/L or 0.5-50μg/L for the analytes with regression coefficients (r) from 0.9942 to 0.9999. The limits of detection were between 0.012 and 0.145μg/L. The recoveries ranged from 79.83% to 103.8% with relative standard deviations (RSDs)<10% (n=3). MIL-101(Cr)@GO exhibited remarkable advantages compared to MIL-101(Cr), MIL-100(Fe), activated carbon and other sorbent materials used in pretreatment methods. A simple, rapid, sensitive, inexpensive and less solvent consuming method of DMSPE-ultra-high performance liquid chromatography-tandem mass spectrometry (DMSPE-UHPLC-MS/MS) was successfully applied to the pre-concentration and determination of twelve SAs in milk samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  17. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

    Energy Technology Data Exchange (ETDEWEB)

    Simon, John; Schulte, Kevin L.; Young, David L.; Haegel, Nancy M.; Ptak, Aaron J.

    2016-01-01

    The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (Voc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (JSC) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.

  18. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  19. Partial vapor-phase hydrolysis of peptide bonds: A method for mass spectrometric determination of O-glycosylated sites in glycopeptides

    DEFF Research Database (Denmark)

    Mirgorodskaya, E; Hassan, H; Wandall, H H

    1999-01-01

    In this study we present a method for determination of O-glycosylation sites in glycopeptides, based on partial vapor-phase acid hydrolysis in combination with mass spectrometric analysis. Pentafluoropropionic acid and hydrochloric acid were used for the hydrolysis of glycosylated peptides....... The reaction conditions were optimized for efficient polypeptide backbone cleavages with minimal cleavage of glycosidic bonds. The glycosylated residues were identified by mass spectrometric analysis of the hydrolytic cleavage products. Although glycosidic bonds are partially cleaved under acid hydrolysis...

  20. Synthesis of ZnO Nanowires via Hotwire Thermal Evaporation of Brass (CuZn) Assisted by Vapor Phase Transport of Methanol

    OpenAIRE

    Tamil Many K. Thandavan; Siti Meriam Abdul Gani; Chiow San Wong; Roslan Md Nor

    2014-01-01

    Zinc oxide (ZnO) nanowires (NWs) were synthesized using vapor phase transport (VPT) and thermal evaporation of Zn from CuZn. Time dependence of ZnO NWs growth was investigated for 5, 10, 15, 20, 25, and 30 minutes. Significant changes were observed from the field electron scanning electron microscopy (FESEM) images as well as from the X-ray diffraction (XRD) profile. The photoluminescence (PL) profile was attributed to the contribution of oxygen vacancy, zinc interstitials, and hydrogen defec...

  1. Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface

    Energy Technology Data Exchange (ETDEWEB)

    Takahara, Hikari, E-mail: hikari@rigaku.co.jp [Rigaku Corp., 14-8 Akaoji-cho, Takatsuki, Osaka 569-1146 (Japan); Mori, Yoshihiro [Horiba Ltd., 2 Miyanohigashi, Kisshoin, Minami-ku, Kyoto 601-8510 (Japan); Shibata, Harumi [SUMCO Corporation, Seavance North, 1-2-1 Shibaura, Minato-ku, Tokyo 105-8634 (Japan); Shimazaki, Ayako [Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan); Shabani, Mohammad B. [Mitsubishi Material Corporation, 1-297, Kitabukuro-cho, Omiya-ku, Saitama 330-8508 (Japan); Yamagami, Motoyuki [Rigaku Corp., 14-8 Akaoji-cho, Takatsuki, Osaka 569-1146 (Japan); Yabumoto, Norikuni [Analysis Atelier Co., 4-36-4, Yoyogi, Shibuya-ku, Tokyo 151-0053 (Japan); Nishihagi, Kazuo [Horiba Ltd., 2 Miyanohigashi, Kisshoin, Minami-ku, Kyoto 601-8510 (Japan); Gohshi, Yohichi [Tsukuba University, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2013-12-01

    Vapor phase treatment (VPT) was under investigation by the International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) to improve the detection limit of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis of silicon wafers. Round robin test results have confirmed that TXRF intensity increased by VPT for intentional contamination with 5 × 10{sup 9} and 5 × 10{sup 10} atoms/cm{sup 2} Fe and Ni. The magnification of intensity enhancement varied greatly (1.2–4.7 in VPT factor) among the participating laboratories, though reproducible results could be obtained for average of mapping measurement. SEM observation results showed that various features, sizes, and surface densities of particles formed on the wafer after VPT. The particle morphology seems to have some impact on the VPT efficiency. High resolution SEM observation revealed that a certain number of dots with SiO{sub 2}, silicate and/or carbon gathered to form a particle and heavy metals, Ni and Fe in this study were segregated on it. The amount and shape of the residue should be important to control VPT factor. - Highlights: • This paper presents a summary of study results of VPT–TXRF using ISO/TC201/WG2. • Our goal is to analyze the trace metallic contamination on silicon wafer with concentrations below 1 × 10{sup 10} atoms/cm{sup 2}. • The efficiency and mechanism of VPT are discussed under several round robin tests and systematic studies.

  2. Effect of Gold Dispersion on the Photocatalytic Activity of Mesoporous Titania for the Vapor-Phase Oxidation of Acetone

    Directory of Open Access Journals (Sweden)

    S. V. Awate

    2008-01-01

    Full Text Available Mesostructured titanium dioxide photocatalyst, having uniform crystallite size (6–12 nm and average pore diameter of ∼4.2 nm, was synthesized by using a low-temperature nonsurfactant hydrothermal route, employing tartaric acid as a templating agent. Gold additions from 0.5 to 2 wt% were incorporated, either during the hydrothermal process or by postsynthesis wet impregnation. Compared to the impregnation-prepared samples, the samples synthesized hydrothermally contained smaller-size (≤1 nm gold clusters occluded in the pores of the host matrix. Whereas CO2 and H2O were the main reaction products in UV-assisted vapor-phase oxidation of acetone using these catalysts, C2H6 and HCO2CH3 were also produced for higher acetone concentrations in air. The conversion of acetone was found to increase with decrease in the size of both TiO2 and gold particles. In situ IR spectroscopy revealed that titania and gold particles serve as independent adsorption and reaction sites for acetone and oxygen molecules. Acetone molecules adsorb exclusively at TiO2 surface, giving rise to a strongly adsorbed (condensed state as well as to the formation of formate- and methyl formate-type surface species. Hydroxyl groups at titania surface participate directly in these adsorption steps. Nanosize gold particles, on the other hand, were primarily responsible for the adsorption and activation of oxygen molecules. Mechanistic aspects of the photochemical processes are discussed on the basis of these observations.

  3. Vapor-Phase Infrared Spectral Study of Weapons-Grade O-Ethyl S-2(diisopropylamino)ethyl methylphosphonothiolate (VX)

    Science.gov (United States)

    2012-05-01

    generate the continuous vapor stream was an adaptation of the saturator cell method developed at the U.S. Army Edgewood Chemical Biological Center...ECBC) for measuring the volatility of chemical warfare (CW) agent related compounds.4 The method , which was modified to generate continuous streams...tank, across an alumina Soxhlet -shaped wick positioned in a glass holder filled with the analyte. This technique yields a saturated vapor-liquid

  4. Analysis of Acrylonitrile and alpha-Methacrylonitrile in Vapor Phase of Mainstream Cigarette Smoke Using a Charcoal Trap for Collection

    Directory of Open Access Journals (Sweden)

    Moldoveanu SC

    2014-12-01

    Full Text Available A simple procedure for the collection of vapor phase (VP of mainstream cigarette smoke for analysis has been developed. This procedure consists of collecting the VP on a commercial charcoal trap (ORBO™-32 followed by dissolution in acetone. The acetone extract can be analyzed by a gas chromatography/mass spectrometry (GC/MS technique. A qualitative analysis of the collected VP has been performed for 3R4F Kentucky reference cigarette, allowing the identification of 138 compounds, some compounds being present in both VP and in particulate phase (PP of cigarette smoke. A quantitative analysis method for acrylonitrile and α-methacrylonitrile (2-methyl-2-propenenitrile was also developed, and the level of these compounds in 15 different cigarette brands was measured. Acrylonitrile quantitation was selected since this compound in smoke poses significant health related issues. α-Methacrylonitrile quantitation was selected due to the similar structure of this compound with acrylonitrile. The analyzed cigarettes were several Kentucky reference cigarettes including 1R5F, 2R4F, 3R4F, 2R1F, and 1R3F, several King Size (KS commercial cigarettes from the US market including Basic Non Filter (NF, Basic Ultra Lights (UL, Newport, Marlboro (Red, Marlboro Menthol, Camel Filter, Camel Lights, Camel Ultra Lights, and two herbal cigarettes, Ecstasy and Dreams. The results for acrylonitrile were in very good agreement with data reported in the literature for 2R4F and 1R5F cigarettes. The levels of α-methacrylonitrile were not previously reported. The correlation between the levels of acrylonitrile and of α-methacrylonitrile with the (wet total particulate matter (TPM was evaluated. Although the levels of acrylonitrile and of α-methacrylonitrile in mainstream smoke depend on the TPM values, the correlation is not very strong, indicating that the nature of the cigarette blend and possible other factors in cigarette construction also influence their levels in

  5. Loading of Two Related Metal-Organic Frameworks (MOFs, [Cu2(bdc2(dabco] and [Cu2(ndc2(dabco], with Ferrocene

    Directory of Open Access Journals (Sweden)

    Wolfgang Wenzel

    2011-09-01

    Full Text Available We have studied the loading of two related, similar porous metal-organic frameworks (MOFs [Cu2(bdc2(dabco] (1, and [Cu2(ndc2(dabco] (2 with ferrocene by exposing bulk powder samples to the corresponding vapor. On the basis of powder X-ray diffraction data and molecular dynamics (MD calculations we propose that each pore can store one ferrocene molecule. Despite the rather pronounced similarity of the two MOFs a quite different behavior is observed, for 1 loading with ferrocene leads to an anisotropic 1% contraction, whereas for 2 no deformation is observed. Mössbauer spectroscopy studies reveal that the Fe oxidation level remains unchanged during the process. Time dependent studies reveal that the diffusion constant governing the loading from the gas-phase for 1 is approximately three times larger than the value for 2.

  6. Vapor Intrusion

    Science.gov (United States)

    Vapor intrusion occurs when there is a migration of volatile chemicals from contaminated groundwater or soil into an overlying building. Volatile chemicals can emit vapors that may migrate through subsurface soils and into indoor air spaces.

  7. Applications of metal-organic frameworks in heterogeneous supramolecular catalysis.

    Science.gov (United States)

    Liu, Jiewei; Chen, Lianfen; Cui, Hao; Zhang, Jianyong; Zhang, Li; Su, Cheng-Yong

    2014-08-21

    This review summarizes the use of metal-organic frameworks (MOFs) as a versatile supramolecular platform to develop heterogeneous catalysts for a variety of organic reactions, especially for liquid-phase reactions. Following a background introduction about catalytic relevance to various metal-organic materials, crystal engineering of MOFs, characterization and evaluation methods of MOF catalysis, we categorize catalytic MOFs based on the types of active sites, including coordinatively unsaturated metal sites (CUMs), metalloligands, functional organic sites (FOS), as well as metal nanoparticles (MNPs) embedded in the cavities. Throughout the review, we emphasize the incidental or deliberate formation of active sites, the stability, heterogeneity and shape/size selectivity for MOF catalysis. Finally, we briefly introduce their relevance into photo- and biomimetic catalysis, and compare MOFs with other typical porous solids such as zeolites and mesoporous silica with regard to their different attributes, and provide our view on future trends and developments in MOF-based catalysis.

  8. The effect of carrier gas flow rate and source cell temperature on low pressure organic vapor phase deposition simulation by direct simulation Monte Carlo method

    Science.gov (United States)

    Wada, Takao; Ueda, Noriaki

    2013-04-01

    The process of low pressure organic vapor phase deposition (LP-OVPD) controls the growth of amorphous organic thin films, where the source gases (Alq3 molecule, etc.) are introduced into a hot wall reactor via an injection barrel using an inert carrier gas (N2 molecule). It is possible to control well the following substrate properties such as dopant concentration, deposition rate, and thickness uniformity of the thin film. In this paper, we present LP-OVPD simulation results using direct simulation Monte Carlo-Neutrals (Particle-PLUS neutral module) which is commercial software adopting direct simulation Monte Carlo method. By estimating properly the evaporation rate with experimental vaporization enthalpies, the calculated deposition rates on the substrate agree well with the experimental results that depend on carrier gas flow rate and source cell temperature.

  9. Response of Aspergillus niger Inoculated on Tomatoes Exposed to Vapor Phase Mustard Essential Oil for Short or Long Periods and Sensory Evaluation of Treated Tomatoes

    Directory of Open Access Journals (Sweden)

    Ana Elena Aguilar-González

    2017-01-01

    Full Text Available The inhibitory effect of mustard essential oil (EO in vapor phase against Aspergillus niger was evaluated in vitro and in vivo (in tomatoes. Mold response in tomatoes exposed for short or long periods to selected concentrations of mustard EO was also evaluated. Furthermore, a sensory evaluation was also performed among treated tomatoes and compared with nontreated ones. Minimum inhibitory concentration (MIC for the studied EO was determined by the inverted Petri dish method. MIC for the in vitro and in vivo tests for mustard EO was of 3.08 μL/Lair. In vitro and in vivo results demonstrate the effectiveness of vapors of mustard EO against A. niger. The studied EO contains highly volatile organic compounds with strong inhibitory effects, even when applied for short periods, and can consequently be considered a good alternative to traditional synthetic antimicrobials without detriment of selected sensory attributes.

  10. Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Fujikura, Hajime; Hayashi, Kentaro; Horikiri, Fumimasa; Narita, Yoshinobu; Konno, Taichiro; Yoshida, Takehiro; Ohta, Hiroshi; Mishima, Tomoyoshi

    2018-04-01

    In vertical GaN PN diodes (PNDs) grown entirely by metal–organic chemical vapor deposition (MOCVD), large current nonuniformity was observed. This nonuniformity was induced by macrosteps on the GaN surface through modulation of carbon incorporation into the n-GaN crystal. It was eliminated in a hybrid PND consisting of a carbon-free n-GaN layer grown by hydride vapor phase epitaxy (HVPE) and an MOCVD-regrown p-GaN layer. The hybrid PND showed a fairly low on-resistance (2 mΩ cm2) and high breakdown voltage (2 kV) even without a field plate electrode. These results clearly indicated the strong advantages of the HVPE-grown drift layer for improving power device performance, uniformity, and yield.

  11. Fabrication of solid state dye sensitized solar cells utilizing vapor phase polymerized poly(3,4-ethylenedioxythiophene) hole conducting layer

    Science.gov (United States)

    Skorenko, Kenneth H.

    There is a need for sustainable and renewable energy sources that can be used in both grid and off-grid structured systems. Photovoltaic devices have been used to generate electrical energy by capturing and converting photons from the sun. Dye sensitized solar cells (DSSC) have gained attention due to their consistent energy generation during indirect sunlight. Furthermore, DSSC can be applied as a flexible device and gain benefits from the low cost roll to roll manufacturing. With this in mind, we have taken steps toward optimizing a DSSC device for use as a solid state solar cell using conducting polymers. Typically DSSC use a liquid electrolyte as a hole conducting layer used to direct the separation of electron -- hole pairs. This liquid electrolyte comes with problems that can be subverted using conducting polymers. Poly(3,4 -- ethylenedioxythiophene) (PEDOT), is a conducting thiophene that is tailored to have enhanced conductivity. We show that a vapor phase polymerization (VPP) of PEDOT can be used as a hole conducting layer in a solid state DSSC device. To this end we have investigated the electrical properties of the VPP PEDOT films in order to understand how the morphology and conductive domains relate to a polymers conductivity. Using 4 point probe we have measure the sheet resistance of the film, as well as how the films resistance is altered during stress tests. Scanning electron microscopy has been utilized to compare morphologies of different PEDOT films and see how surface morphology impacts the conductance measured. Using conductive atomic force microscopy we can look at the conductive domains between VPP PEDOT and PEDOT:PSS films. We saw that conductive domains of the VPP PEDOT are not only more conductive but also much larger in size and widespread throughout the film. We show that there is formation of PEDOT through optical spectroscopy and structural characterization such as UV/Vis and Raman spectroscopy as well as X-ray diffraction. When

  12. International Conference on Metalorganic Vapor Chase Epitaxy (ICMOVPE) XVIII

    Energy Technology Data Exchange (ETDEWEB)

    Dupuis, Russell D. [Georgia Inst. of Technology, Atlanta, GA (United States)

    2017-05-05

    The ICMOVPE-XVIII conference created meaningful opportunities for intellectual challenge, networking opportunities, and intellectual stimulation for graduate students, Post-Doctoral Fellows and all attendees. This technical and social program further provided many opportunities for communication, brainstorming, and transfer of information as well as the development of collaborations across many institutions and companies. We had a significant number of members of underrepresented groups in STEM attending this conference. We also are publishing the proceedings of this conference with the Journal of Crystal Growth, a journal which receives wide electronic distribution in many academic institutions world-wide, making the technical information presented at ICMOVPE-XVIII have a much broader impact than would otherwise be possible. ICMOVPE XVIII had a total of 216 presentations and of these; there were 70 Student oral or poster presentations. The funds we obtained for student support from the Department of Energy were distributed among the registered students and Post Docs to supplement the full cost of registration of $1,100 each for regular registration to the reduced rate of at $850 each for graduate students and Post Docs.

  13. Insights in the analytical performance of neat metal-organic frameworks in the determination of pollutants of different nature from waters using dispersive miniaturized solid-phase extraction and liquid chromatography.

    Science.gov (United States)

    Rocío-Bautista, Priscilla; Pino, Verónica; Pasán, Jorge; López-Hernández, Irene; Ayala, Juan H; Ruiz-Pérez, Catalina; Afonso, Ana M

    2018-03-01

    Five metal-organic frameworks (MOFs), specifically HKUST-1, MOF-5(Zn), MIL-53(Al), UiO-64 and MOF-74(Zn) are synthesized, characterized, and utilized in a miniaturized solid-phase extraction method under dispersive mode (D-µSPE) for the determination of six pollutants of different nature, including one polycyclic aromatic hydrocarbon, two hormones, two drugs, and one disinfectant, from environmental waters (tap water and wastewater). A discussion of possible interactions justifying the partitioning of target analytes to the MOFs is included, considering not only the analytes' physicochemical characteristics but also those of MOFs: metal nature, structural environment of MOF pores, pore size and pore aperture widths, among others. MIL-53(Al) is selected for its versatility and high extraction efficiency for the target compounds. The D-µSPE method using MIL-53(Al) is optimized and used in combination with high-performance liquid chromatography (HPLC) with diode array detector (DAD) or liquid-chromatography with time-of-flight mass spectrometric detector (LC-TOF). Under optimum conditions, only 5mg of MIL-53(Al) are required for 10mL of water, with the aid of 5min of vortex and 5min of centrifugation. Elution is accomplished with 200µL of acetonitrile (3 times), and evaporation down to 100µL before LC injection. Detection limits down to 0.040μgL -1 for triclosan and 0.013μgL -1 for atrazine are obtained for the entire method using HPLC-DAD and LC-TOF, respectively. The method, operating at low spiked levels (2µgL -1 for HPLC-DAD and 0.7µgL -1 for LC-TOF), is also characterized for average relative recoveries of 109% and 105%; relative standard deviation values lower than 8.7% and 7.5%; and average extraction efficiencies of 41.2% and 49.1%; using HPLC-DAD and LC-TOF, respectively; while demonstrating adequate analytical performance with complex samples such as wastewaters. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. The metal-organic framework HKUST-1 as efficient sorbent in a vortex-assisted dispersive micro solid-phase extraction of parabens from environmental waters, cosmetic creams, and human urine.

    Science.gov (United States)

    Rocío-Bautista, Priscilla; Martínez-Benito, Carla; Pino, Verónica; Pasán, Jorge; Ayala, Juan H; Ruiz-Pérez, Catalina; Afonso, Ana M

    2015-07-01

    Three metal-organic frameworks (MOFs), specifically HKUST-1, MOF-5, and MIL-53(Al), have been synthetized, characterized, studied and compared in a vortex-assisted dispersive micro-solid-phase extraction (VA-D-µ-SPE) procedure in combination with high-performance liquid chromatography (HPLC) with diode-array detection (DAD) for determining seven parabens in environmental waters (tap water, swimming pool water, and water coming from a spa pool), human urine (from two volunteers), and cosmetic creams (two commercial brands). Experimental parameters, such as nature and amount of MOF, sample volume, nature of elution solvent and its amount, vortex and centrifugation time, among others, were properly optimized. HKUST-1 was the most adequate MOF to work with. Detection limits for the overall method down to 0.1 μgL(-1) for butylparaben (BPB) and benzylparaben (BzPB) were obtained, with determination coefficients (R(2)) higher than 0.9966 for a range of 0.5-147 μgL(-1) (depending on the paraben), average relative recoveries (RR, in %) of 80.3% at the low spiked level (7 μgL(-1)), and relative standard deviation (RSD) values below 10% also at the low spiked level. The strength of the affinity between HKUST-1 and parabens was evaluated, and it ranged from 33.5% for isopropylparaben (iPPB) to 77.0% for isobutylparaben (iBPB). When analyzing complex environmental waters, RR values of 78%, inter-day precision values (as RSD) lower than 15%, and intra-day precision values lower than 7.8% were obtained, despite the observed matrix effect. When analyzing cosmetic creams, parabens were detected, with contents ranging from 0.14 ± 0.01 μgg(-1) for EPB in the healing cream analyzed to 1.12 ± 0.07 mgg(-1) for MPB in the mask cream analyzed, with precision values (RSD) lower than 12% and RR values from 63.7% for propylparaben (PPB) to 121% for iPPB. When analyzing human urine, no parabens were detected but the method could be performed with RSD values lower than 19%. These

  15. Preparation of ionic liquid modified magnetic metal-organic frameworks composites for the solid-phase extraction of α-chymotrypsin.

    Science.gov (United States)

    Wei, Xiaoxiao; Wang, Yuzhi; Chen, Jing; Xu, Panli; Zhou, Yigang

    2018-05-15

    A novel magnetic solid-phase extraction (MSPE) method based on 1-hexyl-3-methyl imidazolium chloride ionic liquid (IL) modified magnetic Fe 3 O 4 nanoparticles, hydroxylated multiwall carbon nanotubes (MWCNTs-OH) and zeolitic imidazolate frameworks (ZIFs) nanocomposites (Fe 3 O 4 -MWCNTs-OH@ZIF-67@IL) were proposed and applied to extract α-chymotrypsin. The magnetic materials were synthesized successfully and characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), thermal gravimetric analysis (TGA), fourier transform infrared spectrometry (FT-IR), vibrating sample magnetometer (VSM) and zeta potentials. Subsequently, the UV-vis spectrophotometer at about 280 nm was utilized to quantitatively analyze the α-chymotrypsin concentration in the supernatant. Furthermore, single factor experiments revealed that the extraction capacity was influenced by initial α-chymotrypsin concentration, ionic strength, extraction time, extraction temperature and pH value. The extraction capacity could reach up to about 635 mg g -1 under the optimized conditions, absolutely higher than that of extraction for Ovalbumin (OVA), Bovine serum albumin (BSA) and Bovine hemoglobin (BHb). In addition, the regeneration studies showed Fe 3 O 4 -MWCNTs-OH@ZIF-67@IL particles could be reused several times and kept a high extraction capacity. Besides, the study of enzymatic activity also indicated that the activity of the extracted α-chymotrypsin was well maintained 93% of initial activity. What's more, the proposed method was successfully applied to extract α-chymotrypsin in porcine pancreas crude extract with satisfactory results. All of above conclusions highlight the great potential of the proposed Fe 3 O 4 -MWCNTs-OH@ZIF-67@IL-MSPE method in the analysis of biomolecules. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. AQUEOUS AND VAPOR PHASE MERCURY SORPTION BY INORGANIC OXIDE MATERIALS FUNCTIONALIZED WITH THIOLS AND POLY-THIOLS

    Science.gov (United States)

    The objective of the study is the development of sorbents where the sorption sites are highly accessible for the capture of mercury from aqueous and vapor streams. Only a small fraction of the equilibrium capacity is utilized for a sorbent in applications involving short residenc...

  17. Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

    Science.gov (United States)

    Wang, Hongbo; Daigo, Yoshiaki; Seino, Takuya; Ishibashi, Sotaro; Sugiyama, Masakazu

    2016-10-01

    GaN epitaxy was explored on a cone-patterned sapphire substrate with an ex situ AlN seed layer prepared by physical vapor deposition (PVD). The effect of initial growth on the quality of the GaN epilayer was investigated using both ex situ PVD-AlN seed layers with various thicknesses and various deposition parameters such as temperature and reactor pressure in metal-organic vapor-phase epitaxy (MOVPE). It was found that the quality of GaN is insensitive to both the thickness of the ex situ PVD-AlN seed layer and the MOVPE growth conditions. A high-quality GaN film was realized, as indicated by room-temperature CL mapping (dark spot density of 1.6 × 108 cm-2), on a patterned sapphire substrate with a wide growth condition window by simply employing an ex situ PVD-AlN seed layer.

  18. Vitrification in Open and Closed Carriers at Different Cell Stages: Assessment of Embryo Survival, Development, DNA Integrity and Stability during Vapor Phase Storage for Transport

    Directory of Open Access Journals (Sweden)

    Goldberg Jeffrey

    2011-03-01

    Full Text Available Abstract Background High cooling rates with vitrification can be achieved through the use of carriers that allow cryopreservation in fluid volumes Methods Frozen one-cell mouse embryos were thawed and randomly allocated to treatment groups. Embryos were cultured and vitrified at the 8-cell (CL or at the blastocyst (BL stage. The cryoloop, an open carrier was tested against two closed systems, the Cryotip and the HSV straw. Carriers were tested for their ability to maintain embryo viability when held in the vapor phase of a dry shipper for a period of 96 hours. Outcome parameters monitored were embryo survival, recovery, subsequent development and signs of DNA damage. Results A total of 561 embryos were vitrified. The only parameter significantly affected by the type of carrier was the percentage of embryos recovered after warming. Vitrification of both CL and BL stage embryos in the Cryotip resulted in significantly lower recovery rates (P Conclusion This study is one of the first to examine DNA integrity after vitrification on different carriers and at different cell stages. It also provides insight on relative safety of short term vapor storage of vitrified embryos during transport. Within the limits of this study we could not detect an adverse effect of vapor storage on blastomere DNA or other measured outcome parameters.

  19. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Sharofidinov, Sh. Sh., E-mail: shukrillo71@mail.ru; Nikolaev, V. I.; Smirnov, A. N.; Chikiryaka, A. V.; Nikitina, I. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Odnoblyudov, M. A. [St. Petersburg State Polytechnic University (Russian Federation); Bugrov, V. E. [St. Petersburg National Research University of Information Technologies, Mechanics and Optics (Russian Federation); Romanov, A. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-04-15

    The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 μm and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.

  20. Pb sub(1-x) Sn sub(x) Te monocrystal growth by vapor phase transport, with formation of a liquid/solid growth interphase

    International Nuclear Information System (INIS)

    An, C.Y.; Bandeira, I.N.

    1983-01-01

    Due to segregation effects single-crystals of Pb sub(1-x) Sn sub(x) Te growth by Bridgman techniques have an inhomogenous composition profile. A vapor phase transport growth process has been developed in order to reduce convective flows. This is due to the very thin melt layer in front of the crystal, that makes convective flows small and solute mixing in the melt very low. By this process single-crystals with 60 mm lenght by 15 mm diameter and a high degree of homogeneity have been grown. (Author) [pt

  1. A review of standardization issues for total reflection X-ray fluorescence and vapor phase decomposition/total reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    Hockett, R.S.

    1995-01-01

    Total reflection X-ray fluorescence (TXRF) and vapor phase decomposition (VPD) followed by TXRF have become widespread methods for measuring surface metal contamination on silicon wafers. For quantification, TXRF and VPD/TXRF require reference samples. Since the approaches to making and using these reference samples have significantly varied among TXRF manufacturers and users worldwide, there exists some confusion about the quantification of TXRF and VPD/TXRF. This paper summarizes the basic issues behind TXRF and VPD/TXRF quantification using reference samples. (author)

  2. Amorphous and crystalline aerosol particles interacting with water vapor – Part 1: Microstructure, phase transitions, hygroscopic growth and kinetic limitations

    OpenAIRE

    T. Koop; U. Pöschl; S. T. Martin; S. Vlasenko; E. Mikhailov

    2009-01-01

    Interactions with water are crucial for the properties, transformation and climate effects of atmospheric aerosols. Here we outline characteristic features and differences in the interaction of amorphous and crystalline aerosol particles with water vapor. Using a hygroscopicity tandem differential mobility analyzer (H-TDMA), we performed hydration, dehydration and cyclic hydration&dehydration experiments with aerosol particles composed of levoglucosan, oxalic acid and ammonium sulfate (diamet...

  3. Vapor-liquid (VLE) and liquid-liquid (LLE) phase equilibria calculations for polystyrene plus methyleyclohexane and polystyrene plus cyclohexane solutions

    DEFF Research Database (Denmark)

    Wilczura-Wachnik, H.; Jonsdottir, Svava Osk

    2006-01-01

    This paper presents the vapor-liquid (VLE) and liquid-liquid (LLE) phase equilibria predictions for polystyrene in two theta solvents: cyclohexane and methylcyclohexane. VLE calculations were performed with the Elbro free volume method and a modified version of the PC-SAFT method, as well as with...... with experimental data. LLE predictions were performed with PC-SAFT method and compared with experimental data. The obtained results show that the PC-SAFT method gave the most accurate predictions for both VLE as well as LLE for the systems studied.......This paper presents the vapor-liquid (VLE) and liquid-liquid (LLE) phase equilibria predictions for polystyrene in two theta solvents: cyclohexane and methylcyclohexane. VLE calculations were performed with the Elbro free volume method and a modified version of the PC-SAFT method, as well...... as with three UNIFAC type group contribution models: Entropic Free Volume + UNIFAC VLE 1 coeff., Entropic Free Volume + UNIFAC VLE 2coeff., and Oishi-Prausnitz + UNIFAC VLE 2coeff. Solvent activities were calculated for the polystyrene + cyclohexane and polystyrene + methylcyclohcxane solutions, and compared...

  4. Vapor-liquid phase behavior of a size-asymmetric model of ionic fluids confined in a disordered matrix: The collective-variables-based approach

    Science.gov (United States)

    Patsahan, O. V.; Patsahan, T. M.; Holovko, M. F.

    2018-02-01

    We develop a theory based on the method of collective variables to study the vapor-liquid equilibrium of asymmetric ionic fluids confined in a disordered porous matrix. The approach allows us to formulate the perturbation theory using an extension of the scaled particle theory for a description of a reference system presented as a two-component hard-sphere fluid confined in a hard-sphere matrix. Treating an ionic fluid as a size- and charge-asymmetric primitive model (PM) we derive an explicit expression for the relevant chemical potential of a confined ionic system which takes into account the third-order correlations between ions. Using this expression, the phase diagrams for a size-asymmetric PM are calculated for different matrix porosities as well as for different sizes of matrix and fluid particles. It is observed that general trends of the coexistence curves with the matrix porosity are similar to those of simple fluids under disordered confinement, i.e., the coexistence region gets narrower with a decrease of porosity and, simultaneously, the reduced critical temperature Tc* and the critical density ρi,c * become lower. At the same time, our results suggest that an increase in size asymmetry of oppositely charged ions considerably affects the vapor-liquid diagrams leading to a faster decrease of Tc* and ρi,c * and even to a disappearance of the phase transition, especially for the case of small matrix particles.

  5. (abstract) Experimental and Modeling Studies of the Exchange Current at the Alkali Beta'-Alumina/Porous Electrode/Alkali Metal Vapor Three Phase Boundary

    Science.gov (United States)

    Williams, R. M.; Jeffries-Nakamura, B.; Ryan, M. A.; Underwood, M. L.; O'Connor, D.; Kikkert, S.

    1993-01-01

    The microscopic mechanism of the alkali ion-electron recombination reaction at the three phase boundary zone formed by a porous metal electrode in the alkali vapor on the surface of an alkali beta'-alumina solid electrolyte (BASE) ceramic has been studied by comparison of the expected rates for the three simplest reaction mechanisms with known temperature dependent rate data; and the physical parameters of typical porous metal electrode/BASE/alkali metal vapor reaction zones. The three simplest reactions are tunneling of electrons from the alkali coated electrode to a surface bound alkali metal ion; emission of an electron from the electrode with subsequent capture by a surface bound alkali metal ion; and thermal emission of an alkali cation from the BASE and its capture on the porous metal electrode surface where it may recombine with an electron. Only the first reaction adequately accounts for both the high observed rate and its temperature dependence. New results include crude modeling of simple, one step, three phase, solid/solid/gas electrochemical reaction.

  6. Preparation and applications of monolithic structures containing metal-organic frameworks.

    Science.gov (United States)

    Lv, Yongqin; Tan, Xinyi; Svec, Frantisek

    2017-01-01

    Metal-organic frameworks are a new category of advanced porous materials with large surface areas and porosities, uniform pore sizes, tunable surface chemistry, and structural diversity. In combination with monoliths, they allow the fine tuning of desired interactions required in a variety of applications. This review article summarizes results of recent studies focused on synthetic strategies enabling incorporation of metal-organic frameworks in monolithic structures. A diverse array of applications including chromatographic separation, solid-phase microextraction, sample enrichment, heterogeneous catalysis, and enzymatic catalysis are also described. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Catalyst-Free Vapor-Phase Method for Direct Integration of Gas Sensing Nanostructures with Polymeric Transducing Platforms

    Directory of Open Access Journals (Sweden)

    Stella Vallejos

    2014-01-01

    Full Text Available Tungsten oxide nanoneedles (NNs are grown and integrated directly with polymeric transducing platforms for gas sensors via aerosol-assisted chemical vapor deposition (AACVD method. Material analysis shows the feasibility to grow highly crystalline nanomaterials in the form of NNs with aspect ratios between 80 and 200 and with high concentration of oxygen vacancies at the surface, whereas gas testing demonstrates moderate sensing responses to hydrogen at concentrations between 10 ppm and 50 ppm, which are comparable with results for tungsten oxide NNs grown on silicon transducing platforms. This method is demonstrated to be an attractive route to fabricate next generation of gas sensors devices, provided with flexibility and functionality, with great potential in a cost effective production for large-scale applications.

  8. Self-Exfoliated Metal-Organic Nanosheets through Hydrolytic Unfolding of Metal-Organic Polyhedra.

    Science.gov (United States)

    Garai, Bikash; Mallick, Arijit; Das, Anuja; Mukherjee, Rabibrata; Banerjee, Rahul

    2017-05-29

    Few-layers thick metal-organic nanosheets have been synthesized using water-assisted solid-state transformation through a combined top-down and bottom-up approach. The metal-organic polyhedra (MOPs) convert into metal-organic frameworks (MOFs) which subsequently self-exfoliate into few-layered metal-organic nanosheets. These MOP crystals experience a hydrophobicity gradient with the inner surface during contact with water because of the existence of hydrophobic spikes on their outer surface. When the amount of water available for interaction is higher, the resultant layers are not stacked to form bulk materials; instead few-layered nanosheets with high uniformity were obtained in high yield. The phenomenon has resulted high yield production of uniformly distributed layered metal-organic nanosheets from three different MOPs, showing its general adaptability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Vapor phase epitaxial growth of FeS sub 2 pyrite and evaluation of the carrier collection in liquid-junction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A.; Schlichthoerl, G.; Fiechter, S.; Tributsch, H. (Hahn-Meitner-Inst., Abt. Solare Energetik und Materialforschung, Berlin (Germany))

    1992-01-01

    Photoactive epitaxial layers of FeS{sub 2} were grown using bromine as a transport agent and a simple closed ampoule technique. The substrates used were (100)-oriented slices of natural pyrite 1 mm thick. A vapor-liquid-solid (VLS) growth mechanism was elucidated by means of optical microscopy. Macrosteps, terrace surfaces and protuberances are often accompanied with the presence of liquid FeBr{sub 3} droplets. In the absence of a liquid phase growth hillocks are found. Localized photovoltaic response for the evaluation of carrier collection using a scanning laser spot system has been used to effectively locate and characterize non-uniformities present in the epitaxial thin films. (orig.).

  10. Development of a selection support expert system of mathematical models for dynamic simulation of liquid-vapor two-phase flow

    International Nuclear Information System (INIS)

    Gofuku, Akio; Shimizu, Kenji; Sugano, Keiji; Morimoto, Takashi; Yoshikawa, Hidekazu; Wakabayashi, Jiro

    1992-01-01

    This paper deals with computerized supporting techniques of a numerical simulation of complex and large-scale engineering systems like nuclear power plants. As an example of the intelligent support systems of dynamic simulation, a prototype expert system is developed on an expert system development tool to support the selection of mathematical model which is a first step of numerical simulation and is required both wide expert knowledge and high-level decision making. The expert system supports the selection of liquid-vapor two phase flow models (fluid model and constitutive equations) consistent with simulation purpose and condition in the case of thermal-hydraulic simulation of nuclear power plants. The possibility of the expert system is examined for various selection support cases by both investigation of the appropriateness of the selection support logic and comparison between support results and decision results of several experts. (author)

  11. Simultaneous solution of concentration profiles in vapor-liquid phases of wetted-wall distillation column for H2O-HTO isotope separation

    International Nuclear Information System (INIS)

    Sugiyama, Takahiko; Kato, Yoshihisa; Enokida, Youichi; Yamamoto, Ichiro

    1998-01-01

    A simulation model was proposed for prediction of H 2 O-HTO separative performances of water distillation by a wetted-wall column. A wetted-wall column was assumed to be a circular tube, and mole-fraction profiles in the tube were obtained by coupling the equations which describe diffusion processes of both vapor and liquid phases and by solving the equations simultaneously. It was found that the calculations for constant mole-fraction boundary with high mass-transfer rate resulted in overestimations of degree of separation. The relative difference of the HETP value for constant mole-fraction boundary from that for the present model was -19% when P = 101.3 kPa, T = 373 K, R = 0.8 cm, H = 100 cm, k ν,A = 1.0 x 10 4 cm/s and Re ν = 660. (author)

  12. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

    KAUST Repository

    Lorenz, K.

    2010-09-16

    Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

  13. Growth of single - crystals of Pb1-x Snx Te by vapor phase transport with the formation of a liquid/solid growth interface

    International Nuclear Information System (INIS)

    An, C.Y.; Bandeira, I.N.

    1985-01-01

    Due to segregation effects single-crystals of Pb 1-x Sn x Te growth by Bridgman techniques have an inhomogeneous composition profile. A vapor phase transport growth process has been developed in order to reduce convective flows. This is due to the very thin melt layer in front of the crystal, that makes convective flows small and solute mixing in the melt very low. By this process single-crystals with 60mm length by 15 mm diameter and a high degree of homogeneity have been grown. A process for determination of the exact composition profile by measurements of the crystal density, for isomorphous alloys of the type A 1-x B x , is also shown. (Author) [pt

  14. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-11-01

    AlN/GaN short period superlattices are well suited for a number of applications including, but not limited to, digital alloys, intersubband devices, and emitters. In this work, AlN/GaN superlattices with periodicities ranging from 10 to 20 Å have been grown via metal organic vapor phase epitaxy in order to investigate the influence of the interface on the binary alloy growth rates. The GaN growth rate at the interface was observed to decrease with increasing GaN thickness while the AlN growth rate remained constant. This has been attributed to a decrease in the decomposition rate of GaN at the hetero-interface as seen in other III-V hetero-structures.

  15. Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Miller, C. M.; Korakakis, D.

    2011-01-01

    Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

  16. Synthesis of ZnO Nanowires via Hotwire Thermal Evaporation of Brass (CuZn Assisted by Vapor Phase Transport of Methanol

    Directory of Open Access Journals (Sweden)

    Tamil Many K. Thandavan

    2014-01-01

    Full Text Available Zinc oxide (ZnO nanowires (NWs were synthesized using vapor phase transport (VPT and thermal evaporation of Zn from CuZn. Time dependence of ZnO NWs growth was investigated for 5, 10, 15, 20, 25, and 30 minutes. Significant changes were observed from the field electron scanning electron microscopy (FESEM images as well as from the X-ray diffraction (XRD profile. The photoluminescence (PL profile was attributed to the contribution of oxygen vacancy, zinc interstitials, and hydrogen defects in the ZnO NWs. Raman scattering results show a significant peak at 143 cm−1 and possible functionalization on the wall of ZnO NWs. Growth of ZnO NWs in (0002 with an estimated distance between adjacent lattice planes 0.26 nm was determined from transmission electron microscopy (TEM analysis.

  17. Optimization of total vaporization solid-phase microextraction (TV-SPME) for the determination of lipid profiles of Phormia regina, a forensically important blow fly species.

    Science.gov (United States)

    Kranz, William; Carroll, Clinton; Dixon, Darren; Picard, Christine; Goodpaster, John

    2017-11-01

    A new method has been developed for the determination of fatty acids, sterols, and other lipids which naturally occur within pupae of the blow fly Phormia regina. The method relies upon liquid extraction in non-polar solvent, followed by derivatization using N,O-bis(trimethylsilyl)trifluoroacetamide (BSTFA) w/ 1% trimethylchlorsilane (TMCS) carried out inside the sample vial. The analysis is facilitated by total vaporization solid-phase microextraction (TV-SPME), with gas chromatography-mass spectrometry (GC-MS) serving as the instrumentation for analysis. The TV-SPME delivery technique is approximately a factor of five more sensitive than traditional liquid injection, which may alleviate the need for rotary evaporation, reconstitution, collection of high performance liquid chromatography fractions, and many of the other pre-concentration steps that are commonplace in the current literature. Furthermore, the ability to derivatize the liquid extract in a single easy step while increasing sensitivity represents an improvement over current derivatization methods. The most common lipids identified in fly pupae were various saturated and unsaturated fatty acids ranging from lauric acid (12:0) to arachinoic acid (20:4), as well as cholesterol. The concentrations of myristic acid (14:0), palmitelaidic acid (16:2), and palmitoleic acid (16:1) were the most reliable indicators of the age of the pupae. Graphical abstract Blow fly pupae were extracted prior to emerging as adults. The extracts were analyzed via total vaporization solid-phase microextraction (TV-SPME), revealing a complex mixture of lipids that could be associated with the age of the insect. This information may assist in determining a post-mortum interval (PMI) in a death investigation.

  18. High-pressure vapor-phase hydrodeoxygenation of lignin-derived oxygenates to hydrocarbons by a PtMo bimetallic catalyst: Product selectivity, reaction pathway, and structural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Yohe, Sara L.; Choudhari, Harshavardhan J.; Mehta, Dhairya D.; Dietrich, Paul J.; Detwiler, Michael D.; Akatay, Cem M.; Stach, Eric A.; Miller, Jeffrey T.; Delgass, W. Nicholas; Agrawal, Rakesh; Ribeiro, Fabio H.

    2016-12-01

    High-pressure, vapor-phase, hydrodeoxygenation (HDO) reactions of dihydroeugenol (2-methoxy-4-propylphenol), as well as other phenolic, lignin-derived compounds, were investigated over a bimetallic platinum and molybdenum catalyst supported on multi-walled carbon nanotubes (5%Pt2.5%Mo/MWCNT). Hydrocarbons were obtained in 100% yield from dihydroeugenol, including 98% yield of the hydrocarbon propylcyclohexane. The final hydrocarbon distribution was shown to be a strong function of hydrogen partial pressure. Kinetic analysis showed three main dihydroeugenol reaction pathways: HDO, hydrogenation, and alkylation. The major pathway occurred via Pt catalyzed hydrogenation of the aromatic ring and methoxy group cleavage to form 4-propylcyclohexanol, then Mo catalyzed removal of the hydroxyl group by dehydration to form propylcyclohexene, followed by hydrogenation of propylcyclohexene on either the Pt or Mo to form the propylcyclohexane. Transalkylation by the methoxy group occurred as a minor side reaction. Catalyst characterization techniques including chemisorption, scanning transmission electron microscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy were employed to characterize the catalyst structure. Catalyst components identified were Pt particles, bimetallic PtMo particles, a Mo carbide-like phase, and Mo oxide phases.

  19. Vapor Pressure Plus: An Experiment for Studying Phase Equilibria in Water, with Observation of Supercooling, Spontaneous Freezing, and the Triple Point

    Science.gov (United States)

    Tellinghuisen, Joel

    2010-01-01

    Liquid-vapor, solid-vapor, and solid-liquid-vapor equilibria are studied for the pure substance water, using modern equipment that includes specially fabricated glass cells. Samples are evaporatively frozen initially, during which they typically supercool to -5 to -10 [degrees]C before spontaneously freezing. Vacuum pumping lowers the temperature…

  20. Directed vapor deposition

    Science.gov (United States)

    Groves, James Frederick

    This dissertation describes the invention, design, construction, experimental evaluation and modeling of a new physical vapor deposition technique (U.S. Patent #5,534,314) for high rate, efficient deposition of refractory elements, alloys, and compounds onto flat or curved surfaces. The new Directed Vapor Deposition (DVD) technique examined in this dissertation was distinct from previous physical vapor deposition techniques because it used low vacuum electron beam (e-beam) evaporation in combination with a carrier gas stream to transport and vapor spray deposit metals, ceramics, and semiconducting materials. Because of the system's unique approach to vapor phase materials processing, detailed analyses of critical concepts (e.g. the e-beam accelerating voltage and power required for evaporation, the vacuum pumping capacity necessary to generate specific gas flow velocities exiting a nozzle) were used to reduce to practice a functioning materials synthesis tool. After construction, the ability to create low contamination films of pure metals, semi-conducting materials, and compounds via this new method was demonstrated, and oxide deposition using an oxygen-doped gas stream in combination with a pure metal evaporant source was shown to be feasible. DVD vapor transport characteristics were experimentally investigated with deposition chamber pressure, carrier gas type, and e-beam power being identified as major processing parameters which affected vapor atom trajectories. The low vacuum carrier gas streams employed in DVD showed a dramatic ability to focus the vapor stream during transport to the substrate and thereby enhance material deposition rates and efficiencies significantly under certain process conditions. Conditions for maximum deposition efficiency onto flat substrates and continuous fibers were experimentally identified by varying chamber pressure, carrier gas velocity (Mach number), and e-beam power. Deposition efficiencies peaked at about 0.5 Torr when

  1. Amorphous and crystalline aerosol particles interacting with water vapor: conceptual framework and experimental evidence for restructuring, phase transitions and kinetic limitations

    Directory of Open Access Journals (Sweden)

    T. Koop

    2009-12-01

    Full Text Available Interactions with water are crucial for the properties, transformation and climate effects of atmospheric aerosols. Here we present a conceptual framework for the interaction of amorphous aerosol particles with water vapor, outlining characteristic features and differences in comparison to crystalline particles. We used a hygroscopicity tandem differential mobility analyzer (H-TDMA to characterize the hydration and dehydration of crystalline ammonium sulfate, amorphous oxalic acid and amorphous levoglucosan particles (diameter ~100 nm, relative humidity 5–95% at 298 K. The experimental data and accompanying Köhler model calculations provide new insights into particle microstructure, surface adsorption, bulk absorption, phase transitions and hygroscopic growth. The results of these and related investigations lead to the following conclusions:

    (1 Many organic substances, including carboxylic acids, carbohydrates and proteins, tend to form amorphous rather than crystalline phases upon drying of aqueous solution droplets. Depending on viscosity and microstructure, the amorphous phases can be classified as glasses, rubbers, gels or viscous liquids.

    (2 Amorphous organic substances tend to absorb water vapor and undergo gradual deliquescence and hygroscopic growth at lower relative humidity than their crystalline counterparts.

    (3 In the course of hydration and dehydration, certain organic substances can form rubber- or gel-like structures (supramolecular networks and undergo transitions between swollen and collapsed network structures.

    (4 Organic gels or (semi-solid amorphous shells (glassy, rubbery, ultra-viscous with low molecular diffusivity can kinetically limit the uptake and release of water and may influence the hygroscopic growth and activation of aerosol particles as cloud condensation nuclei (CCN and ice nuclei (IN. Moreover, (semi-solid amorphous phases may influence the uptake of gaseous photo

  2. The vapor-phase multi-stage CMD test for characterizing contaminant mass discharge associated with VOC sources in the vadose zone: Application to three sites in different lifecycle stages of SVE operations.

    Science.gov (United States)

    Brusseau, M L; Mainhagu, J; Morrison, C; Carroll, K C

    2015-08-01

    Vapor-phase multi-stage contaminant mass discharge (CMD) tests were conducted at three field sites to measure mass discharge associated with contaminant sources located in the vadose zone. The three sites represent the three primary stages of the soil vapor extraction (SVE) operations lifecycle-pre/initial-SVE, mid-lifecycle, and near-closure. A CMD of 32g/d was obtained for a site at which soil vapor SVE has been in operation for approximately 6years, and for which mass removal is currently in the asymptotic stage. The contaminant removal behavior exhibited for the vapor extractions conducted at this site suggests that there is unlikely to be a significant mass of non-vapor-phase contaminant (e.g., DNAPL, sorbed phase) remaining in the advective domains, and that most remaining mass is likely located in poorly accessible domains. Given the conditions for this site, this remaining mass is hypothesized to be associated with the low-permeability (and higher water saturation) region in the vicinity of the saturated zone and capillary fringe. A CMD of 25g/d was obtained for a site wherein SVE has been in operation for several years but concentrations and mass-removal rates are still relatively high. A CMD of 270g/d was obtained for a site for which there were no prior SVE operations. The behavior exhibited for the vapor extractions conducted at this site suggest that non-vapor-phase contaminant mass (e.g., DNAPL) may be present in the advective domains. Hence, the asymptotic conditions observed for this site most likely derive from a combination of rate-limited mass transfer from DNAPL (and sorbed) phases present in the advective domain as well as mass residing in lower-permeability ("non-advective") regions. The CMD values obtained from the tests were used in conjunction with a recently developed vapor-discharge tool to evaluate the impact of the measured CMDs on groundwater quality. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. Liquid-vapor equilibrium of the systems butylmethylimidazolium nitrate-CO2 and hydroxypropylmethylimidazolium nitrate-CO2 at high pressure: influence of water on the phase behavior.

    Science.gov (United States)

    Bermejo, M Dolores; Montero, Marta; Saez, Elisa; Florusse, Louw J; Kotlewska, Aleksandra J; Cocero, M José; van Rantwijk, Fred; Peters, Cor J

    2008-10-30

    Ionic liquids (IL) are receiving increasing attention due to their potential as "green" solvents, especially when used in combination with SC-CO2. In this work liquid-vapor equilibria of binary mixtures of CO2 with two imidazolium-based ionic liquids (IL) with a nitrate anion have been experimentally determined: butylmethylimidazolium nitrate (BMImNO3) and hydroxypropylmethylimidazolium nitrate (HOPMImNO3), using a Cailletet apparatus that operates according to the synthetic method. CO2 concentrations from 5 up to 30 mol % were investigated. It was found that CO2 is substantially less soluble in HOPMImNO3 than in BMImNO3. Since these ILs are very hygroscopic, water easily can be a major contaminant, causing changes in the phase behavior. In case these Ils are to be used in practical applications, for instance, together with CO2 as a medium in supercritical enzymatic reactions, it is very important to have quantitative information on how the water content will affect the phase behavior. This work presents the first systematic study on the influence of water on the solubility of carbon dioxide in hygroscopic ILs. It was observed that the presence of water reduces the absolute solubility of CO2. However, at fixed ratios of CO2/IL, the bubble point pressure remains almost unchanged with increasing water content. In order to explain the experimental results, the densities of aqueous mixtures of both ILs were determined experimentally and the excess molar volumes calculated.

  4. Organometallic vapor-phase epitaxy of high-quality Ga0.51In0.49P at high growth rates

    International Nuclear Information System (INIS)

    Cao, D.S.; Kimball, A.W.; Chen, G.S.; Fry, K.L.; Stringfellow, G.B.

    1989-01-01

    High-quality Ga 0.51 In 0.49 P, lattice-matched to GaAs, has been grown by atmospheric pressure organometallic vapor-phase epitaxy. The growth was performed at a temperature of 680 degree C and a growth rate of about 12 μm/h. The indium distribution coefficient was found to be unity at this growth temperature. At a V/III ratio of 148, the Ga 0.51 In 0.49 P epilayers had photoluminescence (PL) half-widths of 35 and 7.2 meV at 300 and 10 K, respectively, the best reported results to date. As the V/III ratio was changed from 94 to 240, the 300-K energy band gap measured by PL varied only from 1.897 to 1.912 eV, values close to that of Ga 0.51 In 0.49 P grown by liquid-phase epitaxy. An ordered arrangement of gallium and indium atoms on the column III sublattice with a Cu-Pt structure was observed in transmission electron diffraction patterns for all samples. Our results show that the phenomenon of changing energy band gap with varying V/III ratio does not occur at these high growth rates

  5. The effects of processing conditions on the surface morphology and hydrophobicity of polyvinylidene fluoride membranes prepared via vapor-induced phase separation

    Science.gov (United States)

    Peng, Yuelian; Fan, Hongwei; Ge, Ju; Wang, Shaobin; Chen, Ping; Jiang, Qi

    2012-12-01

    The present investigation reveals how the surface morphology and the hydrophobicity of polyvinylidene fluoride (PVDF) membranes, which were prepared via a vapor-induced phase separation method, were affected by the initial PVDF content in the casting solution and the air temperature. The surface morphology was characterized with scanning electron microscopy. A ternary phase diagram of PVDF/N, N-dimethylacetamide/water was constructed to explain the formation mechanism of the different morphologies. The results show that different membrane morphologies and hydrophobicities can be obtained by changing the processing conditions. Low air temperature and high PVDF contents facilitate the crystallization process, resulting in the formation of a porous skin and particle morphology, which increases the hydrophobicity of the surface. High air temperature and low PVDF contents are favorable for the formation of a net-like surface morphology via spinodal decomposition and lead to a superhydrophobic surface. Theoretical calculations were performed to testify that the net-like surface was more favorable for superhydrophobicity than the particle-based surface.

  6. Effects of exposure time on variations in the structure and hydrophobicity of polyvinylidene fluoride membranes prepared via vapor-induced phase separation

    Science.gov (United States)

    Peng, Yuelian; Fan, Hongwei; Dong, Yajun; Song, Yanna; Han, Hua

    2012-08-01

    The present investigation revealed how the surface morphology and hydrophobicity of polyvinylidene fluoride (PVDF) membranes, which were prepared via a vapor-induced phase separation (VIPS) method, were affected by the exposure time. The mass variation of the cast film was recorded. Membrane morphologies were observed by scanning electron microscopy (SEM) and thermal behaviors of membranes were examined by differential scanning calorimetry (DSC). Wide angle X-ray diffraction (WAXD) was employed to analyze the crystalline structures of the overall membranes and the surface layers. The results showed that different membrane morphologies and hydrophobicities could be obtained by changing the exposure time. A long exposure time facilitated the crystallization process, resulting in the formation of a porous skin and particle morphology, which increased the hydrophobicity of the surface. A short exposure time favored the formation of a digitate macrovoid and dense skin resulting from liquid-liquid phase separation in the immersion process, which reduced surface hydrophobicity. The water permeate flux in vacuum membrane distillation was greatly affected by the membrane porosity and surface hydrophobicity.

  7. Paraffin/expanded graphite phase change composites with enhanced thermal conductivity prepared by implanted β-SiC nanowires with chemical vapor deposition method

    Science.gov (United States)

    Yin, Zhaoyu; Zhang, Xiaoguang; Huang, Zhaohui; Liu, Silin; Zhang, Weiyi; Liu, Yan'gai; Wu, Xiaowen; Fang, Minghao; Min, Xin

    2018-02-01

    Expanded graphite/β-SiC nanowires composites (ESNC) were prepared through chemical vapor deposition, and paraffin/expanded graphite/β-SiC nanowires composites (PESNC) were made through vacuum impregnation to overcome liquid leakage during phase transition and enhance the thermal conductivity of paraffin. Fourier transform infrared spectroscopy showed no chemical interactions between the paraffin and ESNC. Differential scanning calorimetry estimated the temperature and latent heat of PESNC during melting to 45.73 °C and 124.31 J g-1, respectively. The respective values of these quantities during freezing were recorded as 48.93 °C and 124.14 J g-1. The thermal conductivity of PESNC was estimated to 0.75 W mK-1, which was 3.26-folds that of pure paraffin (0.23 W mK-1). PESNC perfectly maintained its phase transition after 200 melting-freezing cycles. The resulting ideal thermal conductivity, good chemical stability, thermal properties and thermal reliability of PESNC are promising for use in energy efficient buildings and solar energy systems.

  8. Dual-Phase CsPbBr3 -CsPb2 Br5 Perovskite Thin Films via Vapor Deposition for High-Performance Rigid and Flexible Photodetectors.

    Science.gov (United States)

    Tong, Guoqing; Li, Huan; Li, Danting; Zhu, Zhifeng; Xu, Enze; Li, Guopeng; Yu, Linwei; Xu, Jun; Jiang, Yang

    2018-02-01

    Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr 2 , dual-phase all-inorganic perovskite composite CsPbBr 3 -CsPb 2 Br 5 thin films are prepared as light-harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W -1 and 10 11 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb 2 Br 5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual-phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Thermal calculation for hydrocarbon vapor condensers by the Gloyer method. Its extrapolation to heat transfer calculation of two phase streams

    International Nuclear Information System (INIS)

    Grange, A.; Jamin, B.

    1974-01-01

    The report resumes the calculation basia given by Walter Gloyer in his different papers and adds certain improvements acquired by long experience in thermal calculation engineering. The following points, necessary for the calculations, are examined in detail: verification of the thermal balances; calculation of the average temperature difference between the vapour and liquid, taking into account the efficiency of the exchanger; pressure loss of the phase stream; calculation of the various thermal resistances; calculation of the exchange surface. The basis of calculation being thus defined, a numerical application of the cooler calculation for hydrocarbon vapour + liquid mixtures with partial condensation is treated and enables the general use of this method to be considered for transfer problems in two-phase streams [fr

  10. Water adsorbate phases on ZnO and impact of vapor pressure on the equilibrium shape of nanoparticles

    Science.gov (United States)

    Kenmoe, Stephane; Biedermann, P. Ulrich

    2018-02-01

    ZnO nanoparticles are used as catalysts and have potential applications in gas-sensing and solar energy conversion. A fundamental understanding of the exposed crystal facets, their surface chemistry, and stability as a function of environmental conditions is essential for rational design and improvement of synthesis and properties. We study the stability of water adsorbate phases on the non-polar low-index (10 1 ¯ 0 ) and (11 2 ¯ 0 ) surfaces from low coverage to multilayers using ab initio thermodynamics. We show that phonon contributions and the entropies due to a 2D lattice gas at low coverage and multiple adsorbate configurations at higher coverage have an important impact on the stability range of water adsorbate phases in the (T,p) phase diagram. Based on this insight, we compute and analyze the possible growth mode of water films for pressures ranging from UHV via ambient conditions to high pressures and the impact of water adsorption on the equilibrium shape of nanoparticles in a humid environment. A 2D variant of the Wulff construction shows that the (10 1 ¯ 0 ) and (11 2 ¯ 0 ) surfaces coexist on 12-faceted prismatic ZnO nanoparticles in dry conditions, while in humid environment, the (10 1 ¯ 0 ) surface is selectively stabilized by water adsorption resulting in hexagonal prisms.

  11. Vapor Detector

    Science.gov (United States)

    Waddell, H. M.; Garrard, G. C.; Houston, D. W.

    1982-01-01

    Detector eliminates need for removing covers to take samples. Detector is canister consisting of screw-in base and clear plastic tube that contains two colors of silica gel. Monoethylhydrazine and nitrogen tetroxide vapors are visually monitored with canister containing color-changing gels.

  12. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Claudel, A., E-mail: arnaud.claudel@grenoble-inp.org [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Fellmann, V. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Gélard, I. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Coudurier, N. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Sauvage, D. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Balaji, M. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Crystal Growth Center, Anna University, Chennai 600025 (India); and others

    2014-12-31

    Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a susceptor heated by induction. The reactants used are ammonia and aluminum chlorides in situ formed via hydrogen chloride reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence and Raman spectroscopies. The influence of the V/III ratio in the gas phase, from 1.5 to 15, on growth rate, surface morphology, roughness and crystalline quality is investigated in order to increase the quality of thin epitaxial AlN layers grown at high temperature. Typical growth rates of around 0.45 μm/h were obtained for such thin epitaxial AlN layers. The growth rate was unaffected by the V/III ratio. An optimum for roughness, crystalline quality and optical properties seems to exist at V/III = 7.5. As a matter of fact, for a V/III ratio of 7.5, best root mean square roughness and crystalline quality — measured on 0002 symmetric reflection — as low as 6.9 nm and 898 arcsec were obtained, respectively. - Highlights: • Growth of thin epitaxial AlN layers by high temperature hydride vapor phase epitaxy • Influence of V/III ratio on growth rate, morphology and crystalline quality • The effect of surface morphology on strain state and crystal quality is established.

  13. Heat transfer coefficient at vaporization interface of a two phase capillary loop; Coefficient de transfert, a l`interface de vaporisation, d`une boucle fluide diphasique a pompage thermocapillaire

    Energy Technology Data Exchange (ETDEWEB)

    Platel, V.; Butto, C.; Briend, PH. [Laboratoire d`Etudes des systemes thermique de l`homme, Leseth, 31 - Toulouse (France); Fudym, O. [Ecoles des Mines, 81 - Albi-Carmaux (France)

    1996-12-31

    In this article, we present the results of heat transfer coefficient measurements at the vaporizations interface of a capillary pumped two-phase loop for two different types of evaporators and various powers. High contact between the evaporator wall and the porous wick, which induces capillary pumping, prevents vapor from escaping and being forced back into the wick and inhibits the device starting up. First, the surface state of the evaporator wall, then the minimum distance between wall and porous wick necessary to optimize operating conditions have been established. (authors) 8 refs.

  14. Minerals with metal-organic framework structures.

    Science.gov (United States)

    Huskić, Igor; Pekov, Igor V; Krivovichev, Sergey V; Friščić, Tomislav

    2016-08-01

    Metal-organic frameworks (MOFs) are an increasingly important family of advanced materials based on open, nanometer-scale metal-organic architectures, whose design and synthesis are based on the directed assembly of carefully designed subunits. We now demonstrate an unexpected link between mineralogy and MOF chemistry by discovering that the rare organic minerals stepanovite and zhemchuzhnikovite exhibit structures found in well-established magnetic and proton-conducting metal oxalate MOFs. Structures of stepanovite and zhemchuzhnikovite, exhibiting almost nanometer-wide and guest-filled apertures and channels, respectively, change the perspective of MOFs as exclusively artificial materials and represent, so far, unique examples of open framework architectures in organic minerals.

  15. Vapor phase circulation all-glass ebulliometer project and tests with dodecane+TWEEN 20 and gasoline distillation curve; Projeto de ebuliometros de circulacao da fase vapor e testes com misturas de dodecano+tween 20 e curva de destilacao de gasolina

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Humberto N.M.; Lima, Cristian Kelly Moraes de; Mota, Andre Luis N.; Dantas Neto, Afonso Avelino; Chiavone-Filho, Osvaldo [Rio Grande do Norte Univ., Natal, RN (Brazil). Dept. de Engenharia Quimica]. E-mail: beto@eq.ufrn.br

    2003-07-01

    This work presents an apparatus to measure vapor-liquid equilibrium (Vle) data at low pressures of easy construction and low cost. The proposed all-glass ebulliometer is a modification of the Othmer type, which recirculate only the vapor phase. The dimensions and specifications of the boiler, equilibrium cell, condensers, samplers, connections and tubes were designed, in a way that the desired steady state is easily reached and may be applied satisfactorily both for diluted and concentrated solutions. The heating is provided by an external resistance ribbon, which is finely adjusted with the aid of a voltage regulator. The required resolutions of temperature and pressure are at least 0.1 K and 0.07 kPa, respectively. The simplicity and efficiency of the apparatus were demonstrated with measurements of vapor-liquid equilibrium data for the binary aqueous system with acetone. Two versions of vapor sampler are presented and tested for the determination of vapor pressure data of dodecane + TWEEN 20 mixtures and for the characterization of gasoline through true boiling point distillation curve. Based on the results, the designed ebulliometer and the corresponding experimental procedures demonstrated to be efficient, of low cost and to cover wide range of system application, inclusive for the characterization of relatively light fractions of petroleum. (author)

  16. vapor phase lubrication of SiO2 surfaces via adsorption of short chain linear alcohols & a sum frequency generation vibration spectroscopy study of crystalline cellulose in biomass

    Science.gov (United States)

    Barnette, Anna Lorraine

    The use of silicon oxide with its native oxide layer for the fabrication of microelectromechanical systems (MEMS) with contacting sliding parts requires the need for innovative lubrication methods to extend device lifetimes. The most promising method to date involves the equilibrium vapor phase lubrication (VPL) of MEMS using short chain linear alcohols in ambient conditions. Still, some questions remain regarding the effectiveness of this lubrication method, these include (1) whether or not the adsorbed n-alcohol molecules are the primary lubricant and (2) is this lubrication method effective in humid environments. This study investigates the vapor phase lubrication of SiO2 surfaces using short chain linear alcohols, more specifically n-propanol and n-pentanol. Macro-scale ball-on-flat tribometer tests are used to evaluate the lubriciousness of n-pentanol vapor under a series of contact loads/ pressures. Wear reduction of the SiO2 surfaces is achieved when there is complete coverage of the SiO2 surfaces with the adsorbed n-pentanol molecules. This occurs when the partial pressure relative to the saturation pressure (P/Psat) of n-pentanol was kept above 20% P/Psat which corresponds to approximately monolayer coverage of the SiO2 surface. In contrast to the lubricious effect of n-pentanol vapor, water vapor proves to enhance wear of the SiO2 surfaces when compared to dry (low moisture) conditions. This study also demonstrates that the primary lubrication method of the SiO 2 surfaces is most likely the adsorbed n-pentanol molecules and not the tribochemical reaction species produced during the sliding contact. Although this reaction species is always present within the wear tested regions, the production of the tribochemical reaction species is enhanced when more severe wear is observed. So, the adsorbed n-pentanol molecules are the primary method of lubrication. The effectiveness of the lubrication method in environments containing water vapor is also investigated

  17. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    Science.gov (United States)

    Ren, X.; Huang, H.; Dubrovskii, V. G.; Sibirev, N. V.; Nazarenko, M. V.; Bolshakov, A. D.; Ye, X.; Wang, Q.; Huang, Y.; Zhang, X.; Guo, J.; Liu, X.

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD.

  18. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    International Nuclear Information System (INIS)

    Ren, X; Huang, H; Ye, X; Wang, Q; Huang, Y; Zhang, X; Guo, J; Liu, X; Dubrovskii, V G; Sibirev, N V; Nazarenko, M V; Bolshakov, A D

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD

  19. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  20. High temperature vapors science and technology

    CERN Document Server

    Hastie, John

    2012-01-01

    High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

  1. Magnetic behaviour in metal-organic frameworks

    Indian Academy of Sciences (India)

    The article describes the synthesis, structure and magnetic investigations of a series of metal-organic framework compounds formed with Mn+2 and Ni+2 ions. The structures, determined using the single crystal X-ray diffraction, indicated that the structures possess two- and three-dimensional structures with magnetically ...

  2. Improving Liquid Entry Pressure of Polyvinylidene Fluoride (PVDF Membranes by Exploiting the Role of Fabrication Parameters in Vapor-Induced Phase Separation VIPS and Non-Solvent-Induced Phase Separation (NIPS Processes

    Directory of Open Access Journals (Sweden)

    Faisal Abdulla AlMarzooqi

    2017-02-01

    Full Text Available Polyvinylidene fluoride (PVDF is a popular polymer material for making membranes for several applications, including membrane distillation (MD, via the phase inversion process. Non-solvent-induced phase separation (NIPS and vapor-induced phase separation (VIPS are applied to achieve a porous PVDF membrane with low mass-transfer resistance and high contact angle (hydrophobicity. In this work, firstly, the impacts of several preparation parameters on membrane properties using VIPS and NIPS were studied. Then, the performance of the selected membrane was assessed in a lab-scale direct-contact MD (DCMD unit. The parametric study shows that decreasing PVDF concentration while increasing both relative humidity (RH and exposure time increased the contact angle and bubble-point pore size (BP. Those trends were investigated further by varying the casting thickness. At higher casting thicknesses and longer exposure time (up to 7.5 min, contact angle (CA increased but BP significantly decreased. The latter showed a dominant trend leading to liquid entry pressure (LEP increase with thickness.

  3. Dispersive micro-solid phase extraction combined with dispersive liquid-liquid microextraction for speciation analysis of antimony by electrothermal vaporization inductively coupled plasma mass spectrometry

    Science.gov (United States)

    Chen, Shizhong; Zhu, Shengping; Lu, Dengbo

    2018-01-01

    A method was developed for speciation analysis of antimony by electrothermal vaporization inductively coupled plasma mass spectrometry (ETV-ICP-MS) after preconcentration/separation using dispersive micro-solid phase extraction (DMSPE) and dispersive liquid-liquid micro-extraction (DLLME). In DMSPE, titanium dioxide nanofibers were used for preconcentration and separation of analytes. The upper aqueous phase and elution solution from DMSPE were used for further preconcentration and separation of Sb(III) and Sb(V) by DLLME without any pre-oxidation or pre-reduction operation, respectively. The extracts from DLLME were used for ETV-ICP-MS determination with APDC as a chemical modifier. Under optimal conditions, the detection limits of this method were 0.019 and 0.025 pg mL- 1 with relative standard deviations of 5.7% and 6.9% for Sb(III) and Sb(V) (c = 1.0 ng mL- 1, n = 9), respectively. This method was applied for speciation analysis of Sb and its distribution in the tea leaves and the tea infusion, including total, suspended, soluble, organic and inorganic Sb as well as Sb(III) and Sb(V). The results showed that the contents of Sb are 62.7, 12.9 and 47.3 ng g- 1 in the tea leaves, tea residue and tea soup, respectively; those of soluble, organic, inorganic, Sb(III) and Sb(V) are 0.41, 0.11, 0.29, 0.21 and 0.07 ng mL- 1 in the tea soup, respectively. A certified reference material of tea leaves (GBW 07605) was analyzed by this method with satisfactory results.

  4. Hollow-fibre liquid phase microextraction for separation and preconcentration of vanadium species in natural waters and their determination by electrothermal vaporization-ICP-OES.

    Science.gov (United States)

    Li, Li; Hu, Bin

    2007-04-30

    For separation and determination of vanadium(IV/V) species, a fast and sensitive method by combining hollow-fibre liquid phase microextraction (HF-LPME) with electrothermal vaporization (ETV)-ICP-OES has been developed. Two vanadium species (V(IV) and V(V)) were separated by HF-LPME with the use of ammonium pyrrolidinecarbodithioate (APDC) as chelating agent for complexing with different V species and carbon tetrachloride as the extraction solvent, and the vanadium in the post-extraction organic phase was injected into the graphite furnace for ETV-ICP-OES detection, in which APDC was acted as the chemical modifier. At pH 5.0, both V(IV)-APDC and V(V)-APDC were extracted quantitatively into CCl(4) for determination of total V. For speciation studies, 1,2-cyclohexanediaminetetraacetic acid (CDTA) was added to the sample for masking V(IV), so that only V(V)-APDC was extracted and determined. The concentration of V(IV) was calculated by subtracting the V(V) concentration from the total concentration of V. Under the optimized experimental conditions, the enrichment factor was 74 and the detection limits for V(IV) and V(V) were 86pgmL(-1) and 71pgmL(-1), respectively. The proposed method has been applied to the speciation of V in environmental water samples, and the recovery was in the range of 94%-107%. The results show that V(V) is the dominant existence form in oxygenic water and V(IV) could not been detected. In order to validate the developed procedure, a NIES No.8 vehicle exhaust particulates certified reference material was analyzed, and the results obtained for total vanadium are in good agreement with the certified values. The proposed method is simple, rapid, selective, and sensitive and no oxidation/reduction is required, it is applicable to the speciation of vanadium in environmental samples with the complicated matrix.

  5. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  6. Forming Intermediate Phase on the Surface of PbI2Precursor Films by Short-Time DMSO Treatment for High-Efficiency Planar Perovskite Solar Cells via Vapor-Assisted Solution Process.

    Science.gov (United States)

    Chen, Haibin; Ding, Xihong; Xu, Pan; Hayat, Tasawar; Alsaedi, Ahmed; Yao, Jianxi; Ding, Yong; Dai, Songyuan

    2018-01-17

    Morphology regulation is vital to obtain high-performance perovskite films. Vapor-assisted deposition provides a simple approach to prepare perovskite films with controlled vapor-solid reaction. However, dense PbI 2 precursor films with large crystal grains make it difficult for organic molecules to diffuse and interact with inner PbI 2 frame. Here, a surface modification process is developed to optimize the surface layer morphology of PbI 2 precursor films and lower the resistance of the induced period in crystallization. The vapor optimization time is shortened to several seconds, and the intermediate phase forms on the surface layer of PbI 2 films. We achieve porous PbI 2 surface with smaller grains through dimethyl sulfoxide vapor treatment, which promotes the migration and reaction rate between CH 3 NH 3 I vapor and PbI 2 layer. The PbI 2 precursor films undergo dramatic morphological evolution due to the formed intermediate phase on PbI 2 surface layer. Taking advantage of the proposed surface modification process, we achieve high-quality uniform perovskite films with larger crystal grains and without residual PbI 2 . The repeatable perovskite solar cells (PSCs) with modified films exhibit power conversion efficiency of up to 18.43% for planar structure. Moreover, the devices show less hysteresis because of improved quality and reduced defect states of the films. Our work expands the application of morphology control through forming intermediate phase and demonstrates an effective way to enhance the performance of the PSCs.

  7. Modified headspace solid-phase microextraction for the determination of quantitative relationships between components of mixtures consisting of alcohols, esters, and ethers - impact of the vapor pressure difference of the compounds.

    Science.gov (United States)

    Dawidowicz, Andrzej Lech; Szewczyk, Joanna; Dybowski, Michal P

    2017-07-01

    The quantitative relationship between analytes established by the headspace solid-phase microextraction procedure for multicomponent mixtures depends not only on the character and strength of interactions of individual components with solid-phase microextraction fiber but also on their vapor pressure in the applied headspace solid-phase microextraction system. This study proves that vapor pressure is of minor importance when the sample is dissolved/suspended in a low-volatility liquid of the same physicochemical character as that of the used solid phase microextraction fiber coating. It is demonstrated for mixtures of alcohols, esters, ethers and their selected representatives by applying a headspace solid-phase microextraction system composed of Carbowax fiber and sample solutions in polyethyleneglycol. The observed differences in quantitative relations between components of the examined mixtures established by their direct analysis and by modified headspace solid-phase microextraction are insignificant (F exp  difference between individual components of the examined mixture in the applied headspace solid phase microextraction system due to low components concentration in polyethyleneglycol suspensions (Raoult's law) and due to strong specific interactions of analyte molecules with polyethyleneglycol molecules. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Modelling the flow and the two-phase science of heat inside a cross-section tube of a `once through` vapor generator overheated with sodium; Modelisation de l`ecoulement et de la thermique double phase a l`interieur d`un tube droit de generateur de vapeur `once-through` a surchauffe chauffe au sodium

    Energy Technology Data Exchange (ETDEWEB)

    Mutelle, H

    1997-11-28

    Concerning the future fast neutrons reactors, studied in the frame of the European Fast Reactor (E.F.R.) project, several innovations have been proposed particularly in the field of vapor generators. These vapor generators have the particularity to use two different exchange fluids which can react violently one with the other. The thermodynamic fluid or secondary fluid is water under high pressure (18.5 MPa) which comes under saturated in the inlet of the device, warms and vaporizes inside the nest of boiler-tubes. At the outlet, vapor is overheated. The primary fluid is a liquid metal (sodium for French reactors) which flows outside the nest of boiler-tubes in the opposite direction of the secondary fluid. Several vapor generators models have been carried out. Concerning the European Fast Reactor project, the tubes have a cross-section and are in ferritic steel. Inside the boiler-tubes, the water-vapor flow can be divided into three areas. The first one is the liquid monophasic rate. It ends by the start of the boiling which is nucleated in the shell. Downstream, the two-phase flow passes from a bubbles flow to an annular flow. The liquid is then on the form of shell film and on the form of droplets carried along by the vapor flux. The dryout of the annular film is the start of the third area where there is vapor forced convection. At the present time, there is still no thermohydraulic code in the conditions of the E.F.R. vapor generator. In order to have a reliable size tool, the members of the E.F.R. project have then decided to do a two-phase flow model and have experimented a mono tubular scale model called ``ATLAS`` which represents well the real component for size, fluids and running conditions. The aim of the present work is then, in the frame of this experimental program, to 1)qualify the heat exchange and friction laws which will be later introduced in the thermohydraulic codes of cross-sections vapor generators 2)characterize the dryout phenomenon 3

  9. Vapor Phase Hydrogen Peroxide Sanitization of an Isolator for Aseptic Filling of Monoclonal Antibody Drug Product - Hydrogen Peroxide Uptake and Impact on Protein Quality.

    Science.gov (United States)

    Hubbard, Aaron; Reodl, Thomas; Hui, Ada; Knueppel, Stephanie; Eppler, Kirk; Lehnert, Siegfried; Maa, Yuh-Fun

    2018-03-15

    A monoclonal antibody drug product (DP) manufacturing process was transferred to a different production site, where aseptic filling took place within an isolator that was sanitized using vapor phase hydrogen peroxide (VPHP). A quality-by-design approach was applied for study design to understand the impact of VPHP uptake in the isolator on DP quality. A combination of small-scale and manufacturing-scale studies was performed to evaluate the sensitivity of the monoclonal antibody to hydrogen peroxide (H2O2) as well as VPHP uptake mechanisms during the filling process. The acceptable H2O2 level was determined to be 100 ng/mL for the antibody in the H2O2 spiking study; protein oxidation was observed above this threshold. The most prominent sources of VPHP uptake were identified to be via the silicone tubing assembly (associated with the peristaltic pumps) and open, filled vials. Silicone tubing, an effective depot to H2O2, could absorb VPHP during different stages of the filling process and discharge H2O2 into the DP solution during filling interruptions. A small-scale isolator model, established to simulate manufacturing-scale conditions, was a useful tool in understanding H2O2 uptake in relation to tubing dimensions and VPHP concentration in the isolator air (or atmosphere). Although the tubing assembly had absorbed a substantial amount of VPHP during the decontamination phase, the majority of H2O2 could be removed during tubing cleaning and sterilization in the subsequent isolator aeration phase, demonstrating that H2O2 in the DP solution is taken up primarily via atmospheric VPHP residues in the isolator during filling. Picarro sensor monitoring suggested that the validated VPHP aeration process generates reproducible residual VPHP profiles in isolator air, thus allowing small-scale studies to provide more relevant recommendations on tubing size and interruption time limits for commercial manufacturing. The recommended process parameters were demonstrated to be

  10. Domestic Preparedness: Phase 2 Sarin Vapor Challenge and Corn Oil Protection Factor (PF) Testing of Commercial Powered Air Purifying Respirator (PAPR) Systems and Cartridges

    National Research Council Canada - National Science Library

    Campbell, Lee E; Lins, Ray; Pappas, Alex G

    2002-01-01

    .... Results indicate that cartridges provide complete penetration resistance against 200 mg/m3 GB challenge concentrations for 60 minutes, but that unacceptably high levels of GB vapor and corn oil...

  11. In situ synthesis of silver nanoparticles on the cotton fabrics modified by plasma induced vapor phase graft polymerization of acrylic acid for durable multifunction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C.X., E-mail: cxwang@mail.dhu.edu.cn [College of Textiles and Clothing, Yancheng Institute of Technology, Jiangsu, 224003 (China); Collaborative Innovation Center for Ecological Building, Materials and Environmental Protection Equipments, Jiangsu, 224051 (China); Laboratory for Advanced Technology in Environmental Protection, Jiangsu, 224051 (China); School of Textile and Clothing, Nantong University, Jiangsu, 226019 (China); Ren, Y. [School of Textile and Clothing, Nantong University, Jiangsu, 226019 (China); Lv, J.C.; Zhou, Q.Q.; Ma, Z.P.; Qi, Z.M.; Chen, J.Y.; Liu, G.L.; Gao, D.W. [College of Textiles and Clothing, Yancheng Institute of Technology, Jiangsu, 224003 (China); Lu, Z.Q. [College of Textiles and Clothing, Yancheng Institute of Technology, Jiangsu, 224003 (China); Collaborative Innovation Center for Ecological Building, Materials and Environmental Protection Equipments, Jiangsu, 224051 (China); Laboratory for Advanced Technology in Environmental Protection, Jiangsu, 224051 (China); Zhang, W. [College of Textiles and Clothing, Yancheng Institute of Technology, Jiangsu, 224003 (China); Jin, L.M. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204 (China)

    2017-02-28

    Highlights: • A new means for multifunctional cotton fabrics by PIVPGP of AA and AgNPs synthesis. • Surface modification by PIVPGP of AA had a positive effect on AgNPs loading. • Antibacterial, self-cleaning and thermal stability were greatly improved. • AgNP loaded cotton fabric exhibited excellent laundering durability. • Mechanism of AgNPs in situ synthesis on cotton fabrics by PIVPGP of AA was proposed. - Abstract: A practical and ecological method for preparing the multifunctional cotton fabrics with excellent laundering durability was explored. Cotton fabrics were modified by plasma induced vapor phase graft polymerization (PIVPGP) of acrylic acid (AA) and subsequently silver nanoparticles (AgNPs) were in situ synthesized on the treated cotton fabrics. The AgNP loaded cotton fabrics were characterized by scanning electron microscope (SEM), energy dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), antibacterial activity, self-cleaning activity, thermal stability and laundering durability, respectively. SEM observation and EDX, XPS and XRD analysis demonstrated the much more AgNPs deposition on the cotton fabrics modified by PIVPGP of AA. The AgNP loaded cotton fabrics also exhibited better antibacterial activity, self-cleaning activity, thermal stability and laundering durability. It was concluded that the surface modification of the cotton fabrics by PIVPGP of AA could increase the loading efficiency and binding fastness of AgNPs on the treated cotton fabrics, which could fabricate the cotton fabrics with durable multifunction. In addition, the mechanism of in situ synthesis of AgNPs on the cotton fabrics modified by PIVPGP of AA was proposed.

  12. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    Science.gov (United States)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (0001) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  13. Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Mitchell, Brandon; Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf; Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru; Ofuchi, Hironori; Honma, Tetsuo; Fujiwara, Yasufumi

    2017-01-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu 2+ to Eu 3+ could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  14. Synthesis and characterization of a liquid Eu precursor (EuCp{sup pm}{sub 2}) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Brandon, E-mail: bmitchell@wcupa.edu [Department of Physics, West Chester University, West Chester, PA, 19383 (United States); Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru [Kojundo Chemical Laboratory Co., Ltd., 5-1-28 Chiyoda, Sakado, Saitama, 350-0284 (Japan); Ofuchi, Hironori; Honma, Tetsuo [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198 (Japan); Fujiwara, Yasufumi, E-mail: fujiwara@mat.eng.osaka-u.ac.jp [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan)

    2017-06-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu{sup 2+} to Eu{sup 3+} could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  15. Capillary microextraction of volatiles device for enhanced BTEX vapors sampling based on a phenyl modified PDMS sol-gel adsorption phase.

    Science.gov (United States)

    Gura, Sigalit; Tarifa, Anamary; Mulloor, Jerome; Torres, Michelle N; Almirall, José R

    2018-07-19

    A novel phenyl modified PDMS (PhPDMS) sol-gel adsorption phase was developed for use with the capillary microextraction of volatiles (CMV) device, and determined to provide significant enhancement in BTEX recoveries when sampling trace (ng) amounts of these volatiles at ambient conditions. The previously reported reusable PDMS-CMV device has been demonstrated to rapidly and efficiently extract target compound's vapors in forensic and environmental applications. An improved recovery for VOCs was achieved with a cryofocusing system while extracting at -10  ° C, but it was found to be impractical for field sampling. This report details a modification to the CMV's chemistry, by the successful introduction of phenyl groups to the PDMS sol-gel adsorption phase, allowing enhanced performance at ambient extraction conditions. Higher average recoveries, determined through a broad concentration range, were demonstrated for PhPDMS-CMV over its original PDMS-CMV, from cans simulating a closed space set-up. Within 7.8 (±10%) and 3.5 (±6%) folds higher for benzene and toluene, respectively and 2 (±2%) folds for ethylbenzene and xylenes. Significant higher retaining capabilities were demonstrated also at the more challenging set-up, simulating an open space environment. Whereas, benzene had completely breakthrough the PDMS-CMV, its reliable detection was still confirmed with PhPDMS-CMV pumping at 2 L or 6 L air, concentration dependent. At least 50 folds (±26%) more toluene was retained with PhPDMS-CMV at 6 L air than with PDMS-CMV. The enhanced overall performance lead to determination of trace LODs with the new CMV of 0.002, 0.00035 and 0.00015 ppm for benzene, toluene, ethyl benzene and xylenes, respectively. As proof of concept, for the first time solvent extraction is presented for the new CMV as an alternative to thermal desorption extraction. Extraction efficiencies of 60% for TEX, and lower concentration dependent for benzene, were demonstrated with the

  16. Metal-organic-vapor-phase-epitaxy and characterization of homoepitaxial ZnO-layers; Metallorganische Gasphasenepitaxie und Charakteriesierung homoepitaktischer ZnO-Schichten

    Energy Technology Data Exchange (ETDEWEB)

    Heinze, Soeren

    2009-03-30

    ZnO is a direct semiconductor with a band gap of 3.37 eV and an exciton binding energy of about 60 meV. By alloying with cadmium or magnesium the band gap can be varied between 2.9 eV and 4 eV, which makes the realization of for instance quantum pot structures. Therefore ZnO is a promising material for optoelectronic applications in the blue and near-ultraviolet spectral range. In spite of world-wide numerous research activities over the last years the realization of p-type ZnO could indeed not sufficiently (i.e. reproduceable and long-time stably) be solved. The ZnO layers of this thesis were fabricated by means of metalorganic gas-phase epitaxy. By means of the studies on heteroepitactically deposed, undoped layers I show the limits of the heteroepitaxy. Although in doping attempts no p-type ZnO could be fabricated. By introduction of a three-stage growth procedure physical properties (morphology, luminescence, crystallographic and electric properties) of the upper ZnO layer could be distinctly improved. On the other hand it was proved that during the fabrication process an electrically high-conductive intermediate layer in the neighbourhood of the substrate/ZnO interface is formed, the formation of which cannot be avoided in the heteroepitaxy. Since about three years ZnO substrates with very good quality are commercially available. Therefore the essential part of this thesis tracts my works on the homoepitaxy of ZnO. For a successful homoepitactical growth a thermal pre-treatment (annealing) of the substrate is necessary. Thereby the substrate is located in a surrounding of ZnO powder and an oxygen atmosphere. The optimal tempering conditions were determined and the influence of these pre-treatment on the physical properties of the substrated were detailedly studied. After the annealing the substrates are suited for the epitaxy. The experiences from the heteroepitaxy could not without more ado be transferred to the homoepitaxy. The quality of the homoepitactical

  17. Petroleum Vapor Intrusion

    Science.gov (United States)

    One type of vapor intrusion is PVI, in which vapors from petroleum hydrocarbons such as gasoline, diesel, or jet fuel enter a building. Intrusion of contaminant vapors into indoor spaces is of concern.

  18. Rare earth vapor laser studies

    International Nuclear Information System (INIS)

    Krupke, W.F.; Jacobs, R.R.

    1977-01-01

    The fluorescence decay rates of vapor phase neodymium aluminum chloride complex (Nd-Al-Cl) and neodymium-thd-chelate have been measured as functions of temperature, partial pressure and optical excitation intensity. Fluorescence quenching due to both ground and excited state collisions was observed in Nd-Al-Cl vapor. In constrast, quenching in the Nd-thd vapor was found to be dominated by multiquantum excitation of molecular vibrations. The fluorescence kinetics of Tb-Al-Cl vapor have also been examined under conditions of intense excitation of terbium 5d levels by a KrF laser source. Both prompt and delayed fluorescence of the 4f 8 ( 5 D 4 ) metastable level were observed together with evidence of excited-state collisional quenching. In laser amplifier experiments, a transient (greater than or equal to 10 μsec) population inversion was produced in Nd-Al-Cl vapor with a small signal gain coefficient greater than or equal to 0.25%/cm and a stored energy density approximately equal to 35 J/liter. Available data for the rare earth vapors are related to scaling requirements of large amplifiers for laser fusion application

  19. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  20. Long Term Field Development of a Surfactant Modified Zeolite/Vapor Phase Bioreactor System for Treatment of Produced Waters for Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Lynn Katz; Kerry Kinney; Robert Bowman; Enid Sullivan; Soondong Kwon; Elaine Darby; Li-Jung Chen; Craig Altare

    2007-12-31

    The main goal of this research was to investigate the feasibility of using a combined physicochemical/biological treatment system to remove the organic constituents present in saline produced water. In order to meet this objective, a physical/chemical adsorption process was developed and two separate biological treatment techniques were investigated. Two previous research projects focused on the development of the surfactant modified zeolite adsorption process (DE-AC26-99BC15221) and development of a vapor phase biofilter (VPB) to treat the regeneration off-gas from the surfactant modified zeolite (SMZ) adsorption system (DE-FC26-02NT15461). In this research, the SMZ/VPB was modified to more effectively attenuate peak loads and to maintain stable biodegradation of the BTEX constituents from the produced water. Specifically, a load equalization system was incorporated into the regeneration flow stream. In addition, a membrane bioreactor (MBR) system was tested for its ability to simultaneously remove the aromatic hydrocarbon and carboxylate components from produced water. The specific objectives related to these efforts included the following: (1) Optimize the performance VPBs treating the transient loading expected during SMZ regeneration: (a) Evaluate the impact of biofilter operating parameters on process performance under stable operating conditions. (b) Investigate how transient loads affect biofilter performance, and identify an appropriate technology to improve biological treatment performance during the transient regeneration period of an SMZ adsorption system. (c) Examine the merits of a load equalization technology to attenuate peak VOC loads prior to a VPB system. (d) Evaluate the capability of an SMZ/VPB to remove BTEX from produced water in a field trial. (2) Investigate the feasibility of MBR treatment of produced water: (a) Evaluate the biodegradation of carboxylates and BTEX constituents from synthetic produced water in a laboratory-scale MBR. (b

  1. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  2. Séparations par changement de phase. Etude et représentation des équilibres liquide-vapeur Separation by Phase Hange. Study and Computing Liquid-Vapor Equilibria

    Directory of Open Access Journals (Sweden)

    Asselineau L.

    2006-11-01

    Full Text Available Pour concevoir et optimiser les principales opérations de séparation (particulièrement les distillations avec ou sans solvant et l'extraction liquide-liquide on doit disposer de méthodes de corrélation ou, mieux, de prédiction des équilibres entre phases. A basse pression, et pour les mélanges d'hydrocarbures, les résultats présentés permettent la prévision des coefficients d'équilibre, même pour les séparations les plus délicates. En présence de constituants polaires, les données expérimentales d'équilibre liquide-liquide et liquide-vapeur de mélanges binaires et ternaires peuvent être simultanément corrélées dans le but de simuler et d'optimiser les distillations azéotropiques ou extractives. Sous haute pression, et particulièrement aux abords immédiats du point critique, le choix d'une équation d'état conduit à un traitement unitaire des phases en présence et permet, en particulier, la prédiction du lieu des points critiques des mélanges d'hydrocarbures et la corrélation de ce lieu en présence de solvants polaires. To determine and optimize the main separation operations (in particular distillations with or without a solvent, and liquid-liquid extraction correlation methods must be available or, better yet, methods of predicting phase equilibria. At low pressure and for hydrocarbon mixtures, the results described make the prediction of equilibrium coefficients possible, even for the most delicate separation. In the presence of polar constituents, the experimental data for the liquid-liquid and liquid-vapor equilibrium of binary and ternary mixtures can be simultaneously correlaten so as to simulate and optimize azeotropic or extractive distillations. Under high pressure and especially in the immediate vicinityof the critical point, the choice of an equation of state leads ta a unit treatment of the phases present and, in particular, makes it possible to predict the location of critical points in hydrocarbon

  3. Mars water vapor, near-surface

    Science.gov (United States)

    Ryan, J. A.; Sharman, R. D.; Lucich, R. D.

    1982-01-01

    In a previous paper we concluded that the temperature sensors aboard the Viking landers (VL-1 and VL-2) were detecting the water vapor frost point. Analysis of one Mars year of data at both lander sites substantiates this conclusion. At VL-1 it is found that the water vapor mixing ratio is constant with height through the bulk of the atmosphere, most of the time. Exceptions are during the onset phases of the two major dust storms when temporary enhancement of near-surface vapor occurs (the same phenomenon is observed at VL-2), and some depletion of near-surface vapor during the decay phase of the first storm, possibly the second storm as well. The former suggests near-surface, northward transport of water vapor with the storms. The latter suggests adsorption of vapor on dust particles followed by surface deposition. At VL-2, severe near-surface depletion of water vapor occurs during northern autumn and winter. The residual vapor is in equilibrium with the surface condensate observed at the site during this period, indicating that the source region for the condensate must be aloft with downward transport by dust fall-out. Since the near-surface water vapor mixing ratio and concentration at VL-1 generally parallels the column abundance over VL-1 obtained by the orbiters, this suggests that VL-1 can be used to give a measure of column abundance for as long as the temperature sensors remain operational.

  4. Water Vapor

    Indian Academy of Sciences (India)

    IAS Admin

    Shallow convection- 70% of the storm heights are below 6 km ... Ice water content and ice effective radius is high during break phase. Regional. Global. ♢LWC , NC liquid. - bimodal over the NAM, NAF and WNP regions single mode over the IND and EAS region. ♢Larger LWC, Nc liquid. , IWC, Er ice. - over the IND and.

  5. Untrapping Kinetically Trapped Ions: The Role of Water Vapor and Ion-Source Activation Conditions on the Gas-Phase Protomer Ratio of Benzocaine Revealed by Ion-Mobility Mass Spectrometry

    Science.gov (United States)

    Xia, Hanxue; Attygalle, Athula B.

    2017-12-01

    The role of water vapor in transforming the thermodynamically preferred species of protonated benzocaine to the less favored protomer was investigated using helium-plasma ionization (HePI) in conjunction with ion-mobility mass spectrometry (IM-MS). The IM arrival-time distribution (ATD) recorded from a neat benzocaine sample desorbed to the gas phase by a stream of dry nitrogen and ionized by HePI showed essentially one peak for the O-protonated species. However, when water vapor was introduced to the enclosed ion source, within a span of about 150 ms the ATD profile changed completely to one dominated by the N-protonated species. Under spray-based ionization conditions, the nature and composition of the solvents have been postulated to play a decisive role in defining the manifested protomer ratios. In reality, the solvent vapors present in the ion source (particularly the ambient humidity) indirectly dictate the gas-phase ratio of the protomers. Evidently, the gas-phase protomer ratio established at the confinement of the ions is readjusted by the ion-activation that takes place during the transmission of ions to the vacuum. Although it has been repeatedly stated that ions can retain a "memory" of their solution structures because they can be kinetically trapped, and thereby represent their solution-based stabilities, we show that the initial airborne ions can undergo significant transformations in the transit through the intermediate vacuum zones between the ion source and the mass detector. In this context, we demonstrate that the kinetically trapped N-protomer of benzocaine can be untrapped by reducing the humidity of the enclosed ion source. [Figure not available: see fulltext.

  6. Optimization of the freezing process for hematopoietic progenitor cells: effect of precooling, initial dimethyl sulfoxide concentration, freezing program, and storage in vapor-phase or liquid nitrogen on in vitro white blood cell quality.

    Science.gov (United States)

    Dijkstra-Tiekstra, Margriet J; Setroikromo, Airies C; Kraan, Marcha; Gkoumassi, Effimia; de Wildt-Eggen, Janny

    2014-12-01

    Adding dimethyl sulfoxide (DMSO) to hematopoietic progenitor cells (HPCs) causes an exothermic reaction, potentially affecting their viability. The freezing method might also influence this. The aim was to investigate the effect of 1) precooling of DMSO and plasma (D/P) and white blood cell (WBC)-enriched product, 2) DMSO concentration of D/P, 3) freezing program, and 4) storage method on WBC quality. WBC-enriched product without CD34+ cells was used instead of HPCs. This was divided into six or eight portions. D/P (20 or 50%; precooled or room temperature [RT]) was added to the WBC-enriched product (precooled or RT), resulting in 10% DMSO, while monitoring temperature. The product was frozen using controlled-rate freezing ("fast-rate" or "slow-rate") and placed in vapor-phase or liquid nitrogen. After thawing, WBC recovery and viability were determined. Temperature increased most for precooled D/P to precooled WBC-enriched product, without influence of 20 or 50% D/P, but remained for all variations below 30°C. WBC recovery for both freezing programs was more than 95%. Recovery of WBC viability was higher for slow-rate freezing compared to fast-rate freezing (74% vs. 61%; p Effect of precooling D/P or WBC-enriched product and of storage in vapor-phase or liquid nitrogen was marginal. Based on these results, precooling is not necessary. Fifty percent D/P is preferred over 20% D/P. Slow-rate freezing is preferred over fast-rate freezing. For safety reasons storage in vapor-phase nitrogen is preferred over storage in liquid nitrogen. Additional testing using real HPCs might be necessary. © 2014 AABB.

  7. Interfacial instability induced by lateral vapor pressure fluctuation in bounded thin liquid-vapor layers

    OpenAIRE

    Kanatani, Kentaro

    2008-01-01

    We study an instability of thin liquid-vapor layers bounded by rigid parallel walls from both below and above. In this system, the interfacial instability is induced by lateral vapor pressure fluctuation, which is in turn attributed to the effect of phase change: evaporation occurs at a hotter portion of the interface and condensation at a colder one. The high vapor pressure pushes the interface downward and the low one pulls it upward. A set of equations describing the temporal evolution of ...

  8. A Monte Carlo study of absorbed dose distributions in both the vapor and liquid phases of water by intermediate energy electrons based on different condensed-history transport schemes

    International Nuclear Information System (INIS)

    Bousis, C; Emfietzoglou, D; Hadjidoukas, P; Nikjoo, H

    2008-01-01

    Monte Carlo transport calculations of dose point kernels (DPKs) and depth dose profiles (DDPs) in both the vapor and liquid phases of water are presented for electrons with initial energy between 10 keV and 1 MeV. The results are obtained by the MC4 code using three different implementations of the condensed-history technique for inelastic collisions, namely the continuous slowing down approximation, the mixed-simulation with δ-ray transport and the addition of straggling distributions for soft collisions derived from accurate relativistic Born cross sections. In all schemes, elastic collisions are simulated individually based on single-scattering cross sections. Electron transport below 10 keV is performed in an event-by-event mode. Differences on inelastic interactions between the vapor and liquid phase are treated explicitly using our recently developed dielectric response function which is supplemented by relativistic corrections and the transverse contribution. On the whole, the interaction coefficients used agree to better than ∼5% with NIST/ICRU values. It is shown that condensed phase effects in both DPKs and DDPs practically vanish above 100 keV. The effect of δ-rays, although decreases with energy, is sizeable leading to more diffused distributions, especially for DPKs. The addition of straggling for soft collisions is practically inconsequential above a few hundred keV. An extensive benchmarking with other condensed-history codes is provided

  9. Biomimicry in metal-organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, MW; Gu, ZY; Bosch, M; Perry, Z; Zhou, HC

    2015-06-15

    Nature has evolved a great number of biological molecules which serve as excellent constructional or functional units for metal-organic materials (MOMs). Even though the study of biomimetic MOMs is still at its embryonic stage, considerable progress has been made in the past few years. In this critical review, we will highlight the recent advances in the design, development and application of biomimetic MOMs, and illustrate how the incorporation of biological components into MOMs could further enrich their structural and functional diversity. More importantly, this review will provide a systematic overview of different methods for rational design of MOMs with biomimetic features. Published by Elsevier B.V.

  10. Metal-organic frameworks in chromatography.

    Science.gov (United States)

    Yusuf, Kareem; Aqel, Ahmad; ALOthman, Zeid

    2014-06-27

    Metal-organic frameworks (MOFs) emerged approximately two decades ago and are the youngest class of porous materials. Despite their short existence, MOFs are finding applications in a variety of fields because of their outstanding chemical and physical properties. This review article focuses on the applications of MOFs in chromatography, including high-performance liquid chromatography (HPLC), gas chromatography (GC), and other chromatographic techniques. The use of MOFs in chromatography has already had a significant impact; however, the utilisation of MOFs in chromatography is still less common than other applications, and the number of MOF materials explored in chromatography applications is limited. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Behavior and impact of sulfur incorporation in Zinc Oxysulfide alloy grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Ma, Jingrui; Tang, Kun; Mao, Haoyuan; Ye, Jiandong; Zhu, Shunming; Xu, Zhonghua; Yao, Zhengrong; Gu, Shulin; Zheng, Youdou

    2018-03-01

    Highly mismatched ZnO1-xSx:N alloy films with various x were deposited on c-plane sapphire substrates by a near-equilibrium method, metal-organic chemical vapor deposition. The sulfur concentration in the films could be tuned by changing the flow rate of H2S during the growth process. The films that could maintain single phase have an upper limit for x ∼ 0.15, which is smaller than the x values obtained from other non-equilibrium-grown samples (x ∼ 0.23). When x > 0.15, phases other than the wurtzite ZnO (W-ZnO) one appeared. Those phases were ascribed to the sulfur-diluted W-ZnO like phase, low x W-ZnO like phase, and high x W-ZnS like phase. The S contents in different phase has been determined by using Vegard's law and the X-ray photoelectron spectroscopy. Meanwhile, the compositional dependence of the bandgap energy in the ZnO1-xSx alloyed material has been investigated and studied comparing with other reported results. The dispersed bowing parameter b and the mechanism of the phase separation in samples grown by both the near-equilibrium method and the non-equilibrium one have also been discussed based on the difference of the atomic radius and electronegativity of the oxygen and sulfur atoms. Furthermore, the Raman and photoluminescence spectra have shown that the sulfur incorporation may suppress zinc interstitials related defects, while the oxygen vacancies related defects may be easily formed at the same time. These results indicate that ZnO1-xSx films could be beneficial to the realization of p-type doping in ZnO, although no obvious p-type characteristic has been attained in the work yet.

  12. Characterization of Adsorption Enthalpy of Novel Water-Stable Zeolites and Metal-Organic Frameworks

    Science.gov (United States)

    Kim, Hyunho; Cho, H. Jeremy; Narayanan, Shankar; Yang, Sungwoo; Furukawa, Hiroyasu; Schiffres, Scott; Li, Xiansen; Zhang, Yue-Biao; Jiang, Juncong; Yaghi, Omar M.; Wang, Evelyn N.

    2016-01-01

    Water adsorption is becoming increasingly important for many applications including thermal energy storage, desalination, and water harvesting. To develop such applications, it is essential to understand both adsorbent-adsorbate and adsorbate-adsorbate interactions, and also the energy required for adsorption/desorption processes of porous material-adsorbate systems, such as zeolites and metal-organic frameworks (MOFs). In this study, we present a technique to characterize the enthalpy of adsorption/desorption of zeolites and MOF-801 with water as an adsorbate by conducting desorption experiments with conventional differential scanning calorimetry (DSC) and thermogravimetric analyzer (TGA). With this method, the enthalpies of adsorption of previously uncharacterized adsorbents were estimated as a function of both uptake and temperature. Our characterizations indicate that the adsorption enthalpies of type I zeolites can increase to greater than twice the latent heat whereas adsorption enthalpies of MOF-801 are nearly constant for a wide range of vapor uptakes. PMID:26796523

  13. Hydrolytically stable fluorinated metal-organic frameworks for energy-efficient dehydration

    KAUST Repository

    Cadiau, Amandine

    2017-05-18

    Natural gas must be dehydrated before it can be transported and used, but conventional drying agents such as activated alumina or inorganic molecular sieves require an energy-intensive desiccant-regeneration step. We report a hydrolytically stable fluorinated metal-organic framework, AlFFIVE-1-Ni (KAUST-8), with a periodic array of open metal coordination sites and fluorine moieties within the contracted square-shaped one-dimensional channel. This material selectively removed water vapor from gas streams containing CO2, N2, CH4, and higher hydrocarbons typical of natural gas, as well as selectively removed both H2O and CO2 in N2-containing streams. The complete desorption of the adsorbed water molecules contained by the AlFFIVE-1-Ni sorbent requires relatively moderate temperature (~105°C) and about half the energy input for commonly used desiccants.

  14. Technique for controllable vapor-phase deposition of 1-nitro(14C)pyrene and other polycyclic aromatic hydrocarbons onto environmental particulate matter

    International Nuclear Information System (INIS)

    Lucas, S.V.; Lee, K.W.; Melton, C.W.; Lewtas, J.; Ball, L.M.

    1991-01-01

    To produce environmental particles fortified with a polycyclic aromatic hydrocarbon (PAH) for toxicology studies, an experimental apparatus was devised for deposition of the desired chemical species onto particles in a controlled and reproducible manner. The technique utilized consists of dispersion of the particles on a gaseous stream at a controlled rate, thermal vaporization of a solution of PAH, delivery of the vaporized PAH into the aerosol of particles at a controlled rate, subsequent condensation of the PAH onto the particles, and final recovery of the coated particles. The effectiveness of this approach was demonstrated by vapor-coating a 14 C-labeled PAH (1-nitro( 14 C)-pyrene) onto diesel engine exhaust particles that had previously been collected by tunnel dilution sampling techniques. Using the 14 C label as a tracer, the coated particles were characterized with respect to degree of coating, integrity of particle structure and absence of chemical decomposition of the coating substrate. The study demonstrates that the described method provides a controllable means for depositing a substance uniformly and with a high coating efficiency onto aerosolized particles. The technique was also used to vapor-coat benzo(a)pyrene onto diesel engine exhaust and urban ambient air particulate matter, and 2-nitrofluoranthene onto urban ambient air particulate matter. Coating efficiencies of about 400 micrograms/g particulate matter were routinely obtained on a single coating run, and up to 1200 micrograms/g (1200 ppm) were achieved after a second pass through the process. The coated particles were subsequently utilized in biological fate, distribution and metabolism studies

  15. Zeolite-like metal-organic frameworks with ana topology

    KAUST Repository

    Eddaoudi, Mohamed

    2017-04-20

    Embodiments of the present disclosure describe a zeolite-like metal-organic framework composition comprising a metal-organic framework composition with ana topology characterized by the formula [MIII(4, 5-imidazole dicarboxylic acid)2X(solvent)a]n wherein MIII comprises a trivalent cation of a rare earth element, X comprises an alkali metal element or alkaline earth metal element, and solvent comprises a guest molecule occupying pores. Embodiments of the present disclosure describe a method of separating paraffins comprising contacting a zeolite-like metal-organic framework with ana topology with a flow of paraffins, and separating the paraffins by size.

  16. (Vapor + liquid) phase equilibrium measurements for {trifluoroiodomethane (R13I1) + propane (R290)} from T = (258.150 to 283.150) K

    International Nuclear Information System (INIS)

    Gong, Maoqiong; Guo, Hao; Dong, Xueqiang; Li, Huiya; Wu, Jianfeng

    2014-01-01

    Highlights: • VLE data for (R13I1 + R290) system were measured at four temperatures. • Experiments were based on the vapor-recirculation method. • VLE data were correlated using PR–vdW and PR–HV–NRTL models. • Zeotropic behavior can be found. - Abstract: In this paper, the (vapor + liquid) equilibrium data for (R13I1 + R290) were measured by a vapor-recirculation apparatus at temperatures from (258.150 to 283.150) K. The VLE data were correlated by the Peng–Robinson equation of state with two different models, the van der Waals mixing rule, and the Huron–Vidal mixing rule involving the NRTL activity coefficient model. Good agreements were found between the calculated data and the experimental data. The maximum average absolute relative deviation of pressure (AARD p) was 0.48%, while the maximum average absolute deviation of composition (AAD y) was 0.0040. Meanwhile, zeotropic behavior can be found for the measured system in this study. The total combined standard uncertainties for temperature, pressure and composition measurements were ±5 mK, ±0.0005 MPa and ±0.005, respectively

  17. Solid phase extraction of cadmium on 2-mercaptobenzothiazole loaded on sulfur powder in the medium of ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate and cold vapor generation-atomic absorption spectrometric determination

    International Nuclear Information System (INIS)

    Pourreza, N.; Ghanemi, K.

    2010-01-01

    A novel solid phase extractor for preconcentration of cadmium at ng L -1 levels has been developed. Cadmium ions were retained on a column packed with sulfur powder modified with 2-mercaptobenzothiazole (2-MBT) in the medium of 1-butyl-3-methylimidazolium hexafluorophosphate ([bmim] + PF 6 - ) ionic liquid. The presence of ionic liquid during modification of sulfur enhanced the retention of cadmium ions on the column. The retained cadmium ions were eluted with 2 mol L -1 solution of HCl and measured by cold vapor generation-atomic absorption spectrometry (CVG-AAS). By using reaction cell-gas liquid separator (RC-GLS), gaseous cadmium vapors were produced and reached the atomic absorption spectrometer, instantaneously. The influence of different variables on both processes of solid phase extraction and CVG-AAS determination of cadmium ions was investigated. The calibration curve was linear in the range of 10-200 ng L -1 of cadmium in the initial solution with r = 0.9992 (n = 8) under optimum conditions. The limit of detection based on three times the standard deviation of the blank (3S b , n = 10) was 4.6 ng L -1 . The relative standard deviation (R.S.D.) of 25 and 150 ng L -1 of cadmium was 4.1 and 2.2% (n = 8), respectively. The procedure was validated by the analysis of a certified reference material (DORM-3), water and fish samples.

  18. Formation and some properties of Fe core-shell powders with experimental parameters of the chemical vapor condensation process

    International Nuclear Information System (INIS)

    Kim, J.C.; Kim, S.J.; Kim, Y.D.; Kim, J.S.; Choi, C.J.

    2009-01-01

    Core-shell powders, recently, have aroused interest because of their potential applications in various areas such as electronics, optics, catalysis, ferrofluids, and magnetic data storage. Their unique properties and superior performances are determined by their powder size, shell thickness and surface structure, phase and powder interaction. In this study, carbon-coated Fe core-shell powders were prepared by chemical vapor condensation (CVC) process using Fe metal-organic (Fe(CO) 5 ) precursor and carbon containing carrier gases such as carbon monoxide and methane. Effects of experimental parameters on the properties of the as-produced core-shell powders were studied by X-ray diffractometer, Brunauer-Emitter-Teller analyzer, high resolution transmission electron microscope and X-ray photoelectron spectrometer. The microstructures and phases of the synthesized core-shell powders varied with the decomposition temperature of the precursors and the flow rate of the carrier gases. CVC Fe powders showed intricate long stand-like structure because of intrinsic magnetic properties of Fe.

  19. Increased Thermal Conductivity in Metal-Organic Heat Carrier Nanofluids

    OpenAIRE

    Manjula I. Nandasiri; Jian Liu; B. Peter McGrail; Jeromy Jenks; Herbert T. Schaef; Vaithiyalingam Shutthanandan; Zimin Nie; Paul F. Martin; Satish K. Nune

    2016-01-01

    Metal-organic heat carriers (MOHCs) are recently developed nanofluids containing metal-organic framework (MOF) nanoparticles dispersed in various base fluids including refrigerants (R245Fa) and methanol. Here, we report the synthesis and characterization of MOHCs containing nanoMIL-101(Cr) and graphene oxide (GO) in an effort to improve the thermo-physical properties of various base fluids. MOHC/GO nanocomposites showed enhanced surface area, porosity, and nitrogen adsorption compared with th...

  20. Empirical model for calculating vapor-liquid equilibrium and associated phase enthalpy for the CO2--O2--Kr--Xe system for application to the KALC process

    International Nuclear Information System (INIS)

    Glass, R.W.; Gilliam, T.M.; Fowler, V.L.

    1976-01-01

    An empirical model is presented for vapor-liquid equilibria and enthalpy for the CO 2 -O 2 system. In the model, krypton and xenon in very low concentrations are combined with the CO 2 -O 2 system, thereby representing the total system of primary interest in the High-Temperature Gas-Cooled Reactor program for removing krypton from off-gas generated during the reprocessing of spent fuel. Selected properties of the individual and combined components being considered are presented in the form of tables and empirical equations

  1. Organometallic chemical vapor deposition of superconducting, high T sub c Pb-doped Bi-Sr-Ca-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.M.; Marcy, H.O.; Tonge, L.M.; Wessels, B.W.; Marks, T.J.; Kannewurf, C.R. (Northwestern University, Evanston, Illinois 60208 (US))

    1989-10-30

    Highly oriented films of the high {ital T}{sub {ital c}} Bi-Pb-Sr-Ca-Cu-O (BPSCCO)superconductor have been prepared by two organometallic chemical vapor deposition (OMCVD) approaches. In the first approach, Pb is introduced by alternate deposition of BSCCO and PbO{sub {ital x}} films using the volatile metalorganic precursors Cu(acetyl acetonate){sub 2}, Sr(dipivaloyl methanate){sub 2}, Ca(dipivaloyl methanate){sub 2}, triphenyl bismuth, and tetraphenyl lead. In the second approach, Pb is incorporated into an OMCVD-derived BSCCO film by vapor diffusion using PbO as the source. X-ray diffractometry and scanning electron microscopy reveal that Pb doping significantly improves the crystalline orientation and the film morphology. Films deposited by both methods on (100) single-crystal MgO consist predominantly of the Bi{sub 2}(Sr,Ca){sub 3}Cu{sub 2}O{sub {ital x}} phase and have a high preferential orientation of the crystallite {ital c} axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at {similar to}110 K and zero resistance by 80 K.

  2. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Science.gov (United States)

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  3. Metal-organic framework MIL-101 as sorbent based on double-pumps controlled on-line solid-phase extraction coupled with high-performance liquid chromatography for the determination of flavonoids in environmental water samples.

    Science.gov (United States)

    Liu, Yue; Hu, Jia; Li, Yan; Li, Xiao-Shuang; Wang, Zhong-Liang

    2016-10-01

    A novel method with high sensitivity for the rapid determination of chrysin, apigenin and luteolin in environment water samples was developed by double-pumps controlled on-line solid-phase extraction (SPE) coupled with high-performance liquid chromatography (HPLC). In the developed technique, metal organic framework MIL-101 was synthesized and applied as a sorbent for SPE. The as-synthesized MIL-101 was characterized by scanning electron microscope, X-ray diffraction spectrometry, thermal gravimetric analysis and micropore physisorption analysis. The MIL-101 behaved as a fast kinetics in the adsorption of chrysin, apigenin and luteolin. On-line SPE of chrysin, apigenin and luteolin was processed by loading a sample solution at a flow rate of 1.0 mL/min for 10 min. The extracted analytes were subsequently eluted into a ZORBAX Bonus-RP analytical column (25 cm long × 4.6 mm i.d.) for HPLC separation under isocratic condition with a mobile phase (MeOH: ACN: 0.02 M H 3 PO 4 = 35:35:30) at a flow rate of 1.0 mL/min. Experimental conditions, including ionic strength, sample pH, sample loading rates, sample loading time and desorption analytes time, were further optimized to obtain efficient preconcentration and high-precision determination of the analytes mentioned above. The method achieved the merits of simplicity, rapidity, sensitivity, wide linear range and high sample throughput. The possible mechanism for the adsorption of flavonoids on MIL-101 was proposed. The developed method has been applied to determine trace chrysin, apigenin and luteolin in a variety of environmental water samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Relationship between catalytic activity and gas-phase pollution fractions in the catalyst in DIR-MCFC. Reactivation method of polluted catalyst by vapor-phase carbonate; DIR-MCFC ni okeru shokubai kassei to shokubaichu no kiso osendo tono kankei. Kiso osen shokubai no saiseiho

    Energy Technology Data Exchange (ETDEWEB)

    Sugiura, K. [Osaka Prefectural College of Technology, Osaka (Japan); Naruse, I. [Toyohashi University of Technology, Aichi (Japan)

    2000-01-25

    In Direct Internal Reforming Molten Carbonate Fuel Cells (DIR-MCFC) deterioration of catalytic activity takes place in the anode channel due to both the liquid-phase pollution and vapor-phase pollution. The liquid-phase pollution meant that catalytic activity is deteriorated by the molten salt's (62 Li{sub 2}CO{sub 3}/38 K{sub 2}CO{sub 3}) adhering to the catalyst. It can be solved by installing the protective barrier in the pollutant pathway. On the other band, the vapor-phase pollution meant that that catalytic activity is deteriorated by KOH adhering to the catalyst. Because the vapor-phase pollution is caused in the entire electrode, an effective defense method has not established yet. Moreover, a reactivation method of vapor-phase polluted catalyst has not been developed yet. In order to study the reactivation method, the adhesion form of potassium compounds in the polluted catalyst under the various gas conditions was evaluated by using a thermogravimetric analyzer in which water vapor can feed. Additionally, the activity of catalyst treated demonstratively was also tested by a differential reactor. As a result, KOH changes to K{sub 2}CO{sub 3} under the condition which CO{sub 2} concentration is larger than 25%. The catalyst with K{sub 2}CO{sub 3} cannot reactive. However., the activity of polluted catalyst is revived until 80% of initial activity by controlling the gas species concentration, especially for CO{sub 2}. Based on the results obtained by these fundamental experiments, the reactivation methods of polluted catalyst are proposed as follows; (1) Catalyst should load more in the upstream in the anode. (2) In order to reactive the polluted catalyst, the ratio of H{sub 2}O to CH{sub 4} in the fuel should increase, when DIR-MCFC is under operation. (3) Gas compositions under cell maintenance mode should be applied in the case that power generation quits. (author)

  5. Vapor Growth of III Nitrides

    Science.gov (United States)

    Cai, Dang; Zheng, Lili; Zhang, Hui

    Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source-substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

  6. Experimental and molecular docking investigation on metal-organic framework MIL-101(Cr) as a sorbent for vortex assisted dispersive micro-solid-phase extraction of trace 5-nitroimidazole residues in environmental water samples prior to UPLC-MS/MS analysis.

    Science.gov (United States)

    Lu, Nan; Wang, Ting; Zhao, Pan; Zhang, Lianjun; Lun, Xiaowen; Zhang, Xueli; Hou, Xiaohong

    2016-11-01

    In the presented work, metal-organic framework (MOF) material MIL-101(Cr) (MIL, Matérial Institute Lavoisier) was used as a sorbent for vortex assisted dispersive micro-solid-phase extraction (VA-D-μ-SPE) of trace amount of metronidazole (MNZ), ronidazole (RNZ), secnidazole (SNZ), dimetridazole (DMZ), tinidazole (TNZ), and ornidazole (ONZ) in different environmental water samples. Ultra-high-performance liquid chromatography coupled with tandem mass spectrometry (UPLC-MS/MS) was used to quantify the target analytes. The extraction conditions, including type of sorbents, amount of MIL-101(Cr), solution pH, extraction method, extraction time, effect of salt, and elution conditions were investigated. Upon the optimal conditions, the developed method showed an excellent extraction performance with the average recovery ranging from 75.2 to 98.8 %. Good sensitivity levels were achieved with the detection limits of 0.03∼0.06 μg/L and the quantitation limits of 0.09∼0.20 μg/L. The linear ranges were varied from 0.1 to 20 for SNZ and ONZ and from 0.2 to 40 μg/L for MNZ, RNZ, DMZ, and TNZ (r 2  > 0.992), and repeatability of the method was satisfactory with the relative standard deviations (RSD) <8 %. Ultimately, the applicability of the method was successfully confirmed by the extraction and determination of 5-nitroimidazoles (5-NDZs) in 12 real water samples, showing the positive findings of MNZ and TNZ ranging from 0.3 to 1.0 μg/L. Furthermore, molecular docking was applied to explain the molecular interactions and free binding energies between MIL-101(Cr) and 5-NDZs, providing a deep insight into the adsorption mechanism. The proposed method exhibited the advantages of simplicity, rapidly, less solvent consumption, ease of operation, higher sensitivity, and lower matrix effect. Graphical abstract Schematic diagram of the extraction process and molecular docking investigation.

  7. Towards the determination of sulfonamides in meat samples: A magnetic and mesoporous metal-organic framework as an efficient sorbent for magnetic solid phase extraction combined with high-performance liquid chromatography.

    Science.gov (United States)

    Xia, Lian; Liu, Lijie; Lv, Xiaoxia; Qu, Fei; Li, Guoliang; You, Jinmao

    2017-06-02

    A magnetic, mesoporous core/shell structured Fe 3 O 4 @JUC-48 nanocomposite was synthesized and employed as a magnetic solid phase extraction (MSPE) sorbent for the determination of trace sulfonamides (SAs) in meat samples. The synthesized nanocomposite was characterized by X-ray diffraction, Fourier transform infrared spectra, transmission electron microscopy, scanning electron microscopy, Brunner-Emmet-Teller, and vibrating sample magnetometry; the Fe 3 O 4 @JUC-48 nanocomposite exhibited a distinctive morphology, large surface area, high magnetism, open adsorption sites, and high chemical stability. By combining the optimized MSPE conditions with high performance liquid chromatography diode array detection, an accurate and sensitive method for the determination of 5 SAs, including sulfadiazine (SDZ), sulfathiazole (STZ), sulfamerazine (SMR), sulfamethazine (SMZ), and sulfamethoxypyridazine (SMP), was developed. The method exhibited good linearity in the range of 3.97-1000ng/g with R ranging from 0.9991 to 0.9994, high sensitivity with LODs ranging from 1.73 to 5.23ng/g, adequate recoveries between 76.1 and 102.6% with low relative standard deviations ranging from 2.1 to 6.4%, and high precision with RSD<4.5%. The Fe 3 O 4 @JUC-48 magnetic nanocomposite is a promising sorbent for the rapid and efficient extraction of SAs from complex biological samples such as chicken, pork, and shrimp. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Evaluation of a novel metal-organic framework as an adsorbent for the extraction of multiclass pesticides from coconut palm (Cocos nucifera L.): An analytical approach using matrix solid-phase dispersion and liquid chromatography.

    Science.gov (United States)

    de Jesus, Jemmyson Romário; Wanderley, Kaline Amaral; Alves Júnior, Severino; Navickiene, Sandro

    2017-08-01

    We report the synthesis, characterization, and application of [Zn(1,4-benzenedicarboxylate)(H 2 O) 2 ] n , Zn(1,4-benzenedicarboxylate) 0.99 (NH 2 -1,4-benzenedicarboxylate) 0.01 (H 2 O) 2 ] n , [Zn(1,4-benzenedicarboxylate) 0.95 (NH 2 -1,4-benzenedicarboxylate) 0.05 (H 2 O) 2 ] n , and [Zn(1,4-benzenedicarboxylate) 0.9 (NH 2 -1,4-benzenedicarboxylate) 0.1 (H 2 O) 2 ] n as sorbents for the extraction of multiclass pesticides from coconut palm. Liquid chromatography with ultraviolet diode array detection was used as the analysis technique, and the experiments were performed at one fortification level (0.1 μg/g). The recoveries were 47-67, 51-70, 58-72, and 64-76% for [Zn(1,4-benzenedicarboxylate)(H 2 O) 2 ] n , Zn(1,4-benzenedicarboxylate) 0.99 (NH 2 -1,4-benzenedicarboxylate) 0.01 (H 2 O) 2 ] n , [Zn(1,4-benzenedicarboxylate) 0.95 (NH 2 -1,4-benzenedicarboxylate) 0.05 (H 2 O) 2 ] n , and [Zn(1,4-benzenelate) 0.95 (NH 2 -1,4-benzenedicarboxylate) 0.05 (H 2 O) 2 ] n , and [Zn(1,4-benzenedicarboxylate) 0.9 (NH 2 -1,4-benzenedicarboxylate) 0.1 (H 2 O) 2 ] n , respectively, with relative standard deviation ranging from 1 to 7% (n = 3). Detection and quantification limits were 0.01-0.05 and 0.05-0.2 μg/g, respectively, for the different pesticides studied. The method developed was linear over the range tested (0.01-10.0 μg/g) with r 2  > 0.9991. A direct comparison of [Zn(1,4-benzenedicarboxylate) 0.9 (NH 2 -1,4-benzenedicarboxylate) 0.1 (H 2 O) 2 ] n with the commercially available neutral alumina showed that [Zn(1,4-benzenedicarboxylate) 0.9 (NH 2 -1,4-benzenedicarboxylate) 0.1 (H 2 O) 2 ] n was a similar extracting phase for the pesticides investigated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Gas phase photocatalytic degradation on TiO{sub 2} pellets of volatile chlorinated organic compounds from a soil vapor extraction well

    Energy Technology Data Exchange (ETDEWEB)

    Yamazaki-Nishida, S.; Read, H.W.; Nagano, J.K.; Anderson, M.A. [Wisconsin Univ., Madison, WI (United States). Water Chemistry Program; Cervera-March, S. [Barcelona Univ., (Spain). Department of Chemical Engineering; Jarosch, T.R.; Eddy-Dilek, C.A. [Westinghouse Savannah River Co., Aiken, SC (United States)

    1993-05-20

    The mineralization of trichloroethylene (TCE) and tetrachloroethylene (PCE) in gas stream from a soil vapor extraction (SVE) well was demonstrated with an annular photocatalytic reactor packed with porous TiO{sub 2} pellets in field trials at the Savannah River Site in Aiken, SC. The TiO{sub 2} pellets were prepared using a sol-gel method. The experiments were performed at 55 to 60{degree}C using space times of 10{sup 8} to 10{sup 10} g s/mol for TCE and PCE. Chloroform (CHCl{sub 3}) and carbon tetrachloride (CCl{sub 4}) were detected as minor products from side reactions. On a molar basis, CCl{sub 4} and CHCl{sub 3} produced were about 2% and 0.2 % of the reactants.

  10. Energy Conversion Alternatives Study (ECAS), Westinghouse phase 1. Volume 7: Metal vapor Rankine topping-steam bottoming cycles. [energy conversion efficiency in electric power plants

    Science.gov (United States)

    Deegan, P. B.

    1976-01-01

    Adding a metal vapor Rankine topper to a steam cycle was studied as a way to increase the mean temperature at which heat is added to the cycle to raise the efficiency of an electric power plant. Potassium and cesium topping fluids were considered. Pressurized fluidized bed or pressurized (with an integrated low-Btu gasifier) boilers were assumed. Included in the cycles was a pressurizing gas turbine with its associated recuperator, and a gas economizer and feedwater heater. One of the ternary systems studied shows plant efficiency of 42.3% with a plant capitalization of $66.7/kW and a cost of electricity of 8.19 mills/MJ (29.5 mills/kWh).

  11. Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

    Science.gov (United States)

    Concepción, O.; Escobosa, A.; de Melo, O.

    2018-03-01

    Bismuth telluride (Bi2Te3), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi2Te3 by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.

  12. Waste Tank Vapor Project: Tank vapor database development

    International Nuclear Information System (INIS)

    Seesing, P.R.; Birn, M.B.; Manke, K.L.

    1994-09-01

    The objective of the Tank Vapor Database (TVD) Development task in FY 1994 was to create a database to store, retrieve, and analyze data collected from the vapor phase of Hanford waste tanks. The data needed to be accessible over the Hanford Local Area Network to users at both Westinghouse Hanford Company (WHC) and Pacific Northwest Laboratory (PNL). The data were restricted to results published in cleared reports from the laboratories analyzing vapor samples. Emphasis was placed on ease of access and flexibility of data formatting and reporting mechanisms. Because of time and budget constraints, a Rapid Application Development strategy was adopted by the database development team. An extensive data modeling exercise was conducted to determine the scope of information contained in the database. a A SUN Sparcstation 1000 was procured as the database file server. A multi-user relational database management system, Sybase reg-sign, was chosen to provide the basic data storage and retrieval capabilities. Two packages were chosen for the user interface to the database: DataPrism reg-sign and Business Objects trademark. A prototype database was constructed to provide the Waste Tank Vapor Project's Toxicology task with summarized and detailed information presented at Vapor Conference 4 by WHC, PNL, Oak Ridge National Laboratory, and Oregon Graduate Institute. The prototype was used to develop a list of reported compounds, and the range of values for compounds reported by the analytical laboratories using different sample containers and analysis methodologies. The prototype allowed a panel of toxicology experts to identify carcinogens and compounds whose concentrations were within the reach of regulatory limits. The database and user documentation was made available for general access in September 1994

  13. Transition metal complexes supported on metal-organic frameworks for heterogeneous catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Omar K.; Hupp, Joseph T.; Delferro, Massimiliano; Klet, Rachel C.

    2017-02-07

    A robust mesoporous metal-organic framework comprising a hafnium-based metal-organic framework and a single-site zirconium-benzyl species is provided. The hafnium, zirconium-benzyl metal-organic framework is useful as a catalyst for the polymerization of an alkene.

  14. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

    Science.gov (United States)

    Kojima, Kazunobu; Tsukada, Yusuke; Furukawa, Erika; Saito, Makoto; Mikawa, Yutaka; Kubo, Shuichi; Ikeda, Hirotaka; Fujito, Kenji; Uedono, Akira; Chichibu, Shigefusa F.

    2015-09-01

    An m-plane freestanding GaN substrate satisfying both low resistivity (ρ = 8.5 × 10-3 Ω·cm) and a low point-defect concentration, being applicable to vertically conducting power-switching devices, was grown by hydride vapor phase epitaxy on a nearly bowing-free bulk GaN seed wafer synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer. Its threading dislocation and basal-plane staking-fault densities were approximately 104 cm-2 and lower than 100 cm-1, respectively. A record-long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission, reflecting a significantly low concentration of nonradiative recombination centers composed of Ga vacancies.

  15. Evaluating the efficiency of two phase partitioning stirred tank bio-reactor for treating xylene vapors from the airstreamthrough a bed of Pseudomonas Putida

    Directory of Open Access Journals (Sweden)

    F. Golbabaei

    2015-04-01

    Conclusion: Overall, the results of the present research revealed that the application of two phase stirred tank bioreactors (TPPBs containing pure strains of Pseudomonas putida was successful for treatment of air streams with xylene.

  16. Hydrogen Storage in Metal-Organic Frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Long, Jeffrey R. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-04-28

    The design and characterization of new materials for hydrogen storage is an important area of research, as the ability to store hydrogen at lower pressures and higher temperatures than currently feasible would lower operating costs for small hydrogen fuel cell vehicles. In particular, metal-organic frameworks (MOFs) represent promising materials for use in storing hydrogen in this capacity. MOFs are highly porous, three-dimensional crystalline solids that are formed via linkages between metal ions (e.g., iron, nickel, and zinc) and organic molecules. MOFs can store hydrogen via strong adsorptive interactions between the gas molecules and the pores of the framework, providing a high surface area for gas adsorption and thus the opportunity to store hydrogen at significantly lower pressures than with current technologies. By lowering the energy required for hydrogen storage, these materials hold promise in rendering hydrogen a more viable fuel for motor vehicles, which is a highly desirable outcome given the clean nature of hydrogen fuel cells (water is the only byproduct of combustion) and the current state of global climate change resulting from the combustion of fossil fuels. The work presented in this report is the result of collaborative efforts between researchers at Lawrence Berkeley National Lab (LBNL), the National Institute of Standards and Technology (NIST), and General Motors Corporation (GM) to discover novel MOFs promising for H2 storage and characterize their properties. Described herein are several new framework systems with improved gravimetric and volumetric capacity to strongly bind H2 at temperatures relevant for vehicle storage. These materials were rigorously characterized using neutron diffraction, to determine the precise binding locations of hydrogen within the frameworks, and high-pressure H2 adsorption measurements, to provide a comprehensive picture of H2 adsorption at all relevant pressures. A

  17. Applicability of the theory of thermodynamic similarity to predict the enthalpies of vaporization of aliphatic aldehydes

    Science.gov (United States)

    Esina, Z. N.; Korchuganova, M. R.

    2015-06-01

    The theory of thermodynamic similarity is used to predict the enthalpies of vaporization of aliphatic aldehydes. The predicted data allow us to calculate the phase diagrams of liquid-vapor equilibrium in a binary water-aliphatic aldehyde system.

  18. Multifunctional Metal-Organic Frameworks for Photocatalysis.

    Science.gov (United States)

    Wang, Sibo; Wang, Xinchen

    2015-07-01

    Metal-organic frameworks (MOFs) have attracted significant research attention in diverse areas due to their unique physical and chemical characteristics that allow their innovative application in various research fields. Recently, the application of MOFs in heterogeneous photocatalysis for water splitting, CO2 reduction, and organic transformation have emerged, aiming at providing alternative solutions to address the world-wide energy and environmental problems by taking advantage of the unique porous structure together with ample physicochemical properties of the metal centers and organic ligands in MOFs. In this review, the latest progress in MOF-involved solar-to-chemical energy conversion reactions are summarized according to their different roles in the photoredox chemical systems, e.g., photocatalysts, co-catalysts, and hosts. The achieved progress and existing problems are evaluated and proposed, and the opportunities and challenges of MOFs and their related materials for their advanced development in photocatalysis are discussed and anticipated. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Nanomaterials derived from metal-organic frameworks

    Science.gov (United States)

    Dang, Song; Zhu, Qi-Long; Xu, Qiang

    2018-01-01

    The thermal transformation of metal-organic frameworks (MOFs) generates a variety of nanostructured materials, including carbon-based materials, metal oxides, metal chalcogenides, metal phosphides and metal carbides. These derivatives of MOFs have characteristics such as high surface areas, permanent porosities and controllable functionalities that enable their good performance in sensing, gas storage, catalysis and energy-related applications. Although progress has been made to tune the morphologies of MOF-derived structures at the nanometre scale, it remains crucial to further our knowledge of the relationship between morphology and performance. In this Review, we summarize the synthetic strategies and optimized methods that enable control over the size, morphology, composition and structure of the derived nanomaterials. In addition, we compare the performance of materials prepared by the MOF-templated strategy and other synthetic methods. Our aim is to reveal the relationship between the morphology and the physico-chemical properties of MOF-derived nanostructures to optimize their performance for applications such as sensing, catalysis, and energy storage and conversion.

  20. Text Mining Metal-Organic Framework Papers.

    Science.gov (United States)

    Park, Sanghoon; Kim, Baekjun; Choi, Sihoon; Boyd, Peter G; Smit, Berend; Kim, Jihan

    2018-02-26

    We have developed a simple text mining algorithm that allows us to identify surface area and pore volumes of metal-organic frameworks (MOFs) using manuscript html files as inputs. The algorithm searches for common units (e.g., m 2 /g, cm 3 /g) associated with these two quantities to facilitate the search. From the sample set data of over 200 MOFs, the algorithm managed to identify 90% and 88.8% of the correct surface area and pore volume values. Further application to a test set of randomly chosen MOF html files yielded 73.2% and 85.1% accuracies for the two respective quantities. Most of the errors stem from unorthodox sentence structures that made it difficult to identify the correct data as well as bolded notations of MOFs (e.g., 1a) that made it difficult identify its real name. These types of tools will become useful when it comes to discovering structure-property relationships among MOFs as well as collecting a large set of data for references.

  1. Diffuse X-ray scattering near a two-dimensional liquid-vapor phase transition at the n-hexane-water interface

    Science.gov (United States)

    Tikhonov, A. M.

    2017-11-01

    The molecular structure of neutral n-triacontanol mesophases at the n-hexane-water interface has been studied by diffuse X-ray scattering using synchrotron radiation. According to the experimental data, a transition to the multilayer adsorption of alkanol occurs at a temperature below the transition from a gas phase to a liquid Gibbs monolayer.

  2. Recent Advances as Materials of Functional Metal-Organic Frameworks

    Directory of Open Access Journals (Sweden)

    Xiao-Lan Tong

    2013-01-01

    Full Text Available Metal-organic frameworks (MOFs, also known as hybrid inorganic-organic materials, represent an emerging class of materials that have attracted the imagination of solid-state chemists because MOFs combine unprecedented levels of porosity with a range of other functional properties that occur through the metal moiety and/or the organic ligand. The purpose of this critical review is to give a representative and comprehensive overview of the arising developments in the field of functional metal-organic frameworks, including luminescence, magnetism, and porosity through presenting examples. This review will be of interest to researchers and synthetic chemists attempting to design multifunctional MOFs.

  3. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

    KAUST Repository

    Young, N.G.

    2016-10-01

    We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

  4. Versatility of metalorganic chemical vapor deposition process for fabrication of high quality YBCO superconducting thin films

    Science.gov (United States)

    Chern, C. S.; Kear, B. H.; Zhao, J.; Norris, P. E.; Li, Y. Q.

    1991-03-01

    YBCO films, having critical current densities in excess of 10 to the 6th A/sq cm at 77 K and transition temperatures of about 89 K, successfully deposited on close lattice matched substrate materials at substrate temperature in the range from 720 to 740 C, are presented. The critical current densities are 10,000 A/sq cm at 70 K and the critical temperatures are 82 K for the films deposited on sapphire substrates. Successful deposition of c-axis oriented YBCO films with a transition temperature of 85 K was also achieved on silver substrates. Detailed analyses of the films were carried out by X-ray diffraction, EDS, SEM, resistivity measurements, critical current density measurements, and magnetization susceptibility measurements.

  5. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    Science.gov (United States)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  6. Numerical modeling of a vaporizing multicomponent droplet

    Science.gov (United States)

    Megaridis, C. M.; Sirignano, W. A.

    The fundamental processes governing the energy, mass, and momentum exchange between the liquid and gas phases of vaporizing, multicomponent liquid droplets have been investigated. The axisymmetric configuration under consideration consists of an isolated multicomponent droplet vaporizing in a convective environment. The model considers different volatilities of the liquid components, variable liquid properties due to variation of the species concentrations, and non-Fickian multicomponent gaseous diffusion. The bicomponent droplet model was employed to examine the commonly used assumptions of unity Lewis number in the liquid phase and Fickian gaseous diffusion. It is found that the droplet drag coefficients, the vaporization rates, and the related transfer numbers are not influenced by the above assumptions in a significant way.

  7. Method for Determining Vaporization Parameters

    Data.gov (United States)

    National Aeronautics and Space Administration — An accurate method of measuring vaporization coefficients will be very useful to each of these disciplines: Cosmochemistry,Evaporative Vapor Deposition, Durability...

  8. Achieving Amphibious Superprotonic Conductivity in a CuI Metal-Organic Framework by Strategic Pyrazinium Salt Impregnation.

    Science.gov (United States)

    Khatua, Sajal; Bar, Arun Kumar; Sheikh, Javeed Ahmad; Clearfield, Abraham; Konar, Sanjit

    2018-01-19

    Treatment of a pyrazine (pz)-impregnated Cu I metal-organic framework (MOF) ([1⊃pz]) with HCl vapor renders an interstitial pyrazinium chloride salt-hybridized MOF ([1⊃pz⋅6 HCl]) that exhibits proton conductivity over 10 -2  S cm -1 both in anhydrous and under humid conditions. Framework [1⊃pz⋅6 HCl] features the highest anhydrous proton conductivity among the lesser-known examples of MOF-based materials exhibiting proton conductivity under both anhydrous and humid conditions. Moreover, [1⊃pz] and corresponding pyrazinium sulfate- and pyrazinium phosphate-hybridized MOFs also exhibit superprotonic conductivity over 10 -2  S cm -1 under humid conditions. The impregnated pyrazinium ions play a crucial role in protonic conductivity, which occurs through a Grotthuss mechanism. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical ... capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial ... systems promising candidates for a wide range of electronic, magnetic and optical applications. However ...

  10. Magnetic behaviour in metal-organic frameworks—Some recent ...

    Indian Academy of Sciences (India)

    The article describes the synthesis, structure and magnetic investigations of a series of metal-organic framework compounds formed with Mn+2 and Ni+2 ions. The structures, determined using the single crystal X-ray diffraction, indicated that the structures possess two- and three-dimensional structures with magnetically ...

  11. Neutron powder diffraction of metal-organic frameworks for ...

    Indian Academy of Sciences (India)

    Abstract. We review recent structural studies that we have undertaken aimed at eluci- dating the fundamental properties of metal-organic framework materials and their inter- actions with hydrogen. We have shown that exposing coordinatively unsaturated metal centers can greatly enhance the hydrogen binding energy and ...

  12. Neutron powder diffraction of metal-organic frameworks for ...

    Indian Academy of Sciences (India)

    We review recent structural studies that we have undertaken aimed at elucidating the fundamental properties of metal-organic framework materials and their interactions with hydrogen. We have shown that exposing coordinatively unsaturated metal centers can greatly enhance the hydrogen binding energy and that they ...

  13. Methane storage in flexible metal-organic frameworks with intrinsic thermal management.

    Science.gov (United States)

    Mason, Jarad A; Oktawiec, Julia; Taylor, Mercedes K; Hudson, Matthew R; Rodriguez, Julien; Bachman, Jonathan E; Gonzalez, Miguel I; Cervellino, Antonio; Guagliardi, Antonietta; Brown, Craig M; Llewellyn, Philip L; Masciocchi, Norberto; Long, Jeffrey R

    2015-11-19

    As a cleaner, cheaper, and more globally evenly distributed fuel, natural gas has considerable environmental, economic, and political advantages over petroleum as a source of energy for the transportation sector. Despite these benefits, its low volumetric energy density at ambient temperature and pressure presents substantial challenges, particularly for light-duty vehicles with little space available for on-board fuel storage. Adsorbed natural gas systems have the potential to store high densities of methane (CH4, the principal component of natural gas) within a porous material at ambient temperature and moderate pressures. Although activated carbons, zeolites, and metal-organic frameworks have been investigated extensively for CH4 storage, there are practical challenges involved in designing systems with high capacities and in managing the thermal fluctuations associated with adsorbing and desorbing gas from the adsorbent. Here, we use a reversible phase transition in a metal-organic framework to maximize the deliverable capacity of CH4 while also providing internal heat management during adsorption and desorption. In particular, the flexible compounds Fe(bdp) and Co(bdp) (bdp(2-) = 1,4-benzenedipyrazolate) are shown to undergo a structural phase transition in response to specific CH4 pressures, resulting in adsorption and desorption isotherms that feature a sharp 'step'. Such behaviour enables greater storage capacities than have been achieved for classical adsorbents, while also reducing the amount of heat released during adsorption and the impact of cooling during desorption. The pressure and energy associated with the phase transition can be tuned either chemically or by application of mechanical pressure.

  14. Gasoline Reid Vapor Pressure

    Science.gov (United States)

    EPA regulates the vapor pressure of gasoline sold at retail stations during the summer ozone season to reduce evaporative emissions from gasoline that contribute to ground-level ozone and diminish the effects of ozone-related health problems.

  15. Muonium formation and the 'missing fraction' in vapors

    International Nuclear Information System (INIS)

    Fleming, D.G.; Arseneau, D.J.; Garner, D.M.; Senba, M.; Mikula, R.J.

    1983-06-01

    The vapor phase fractional polarizations of positive muons thermalizing as the muonium atom (Psub(M)) and in diamagnetic environments (Psub(D)) has been measured in H 2 O, CH 3 OH, C 6 H 14 , C 6 H 12 , CCl 4 , CHCl 3 , CH 2 Cl 2 and TMS, in order to compare with the corresponding fractions measured in the condensed phases. There is a marked contrast in every case, with the vapor phase results being largely understandable in terms of a charge exchange/hot atom model. Unlike the situation in the corresponding liquids, there is no permanent lost fraction in the vapor phase in the limit of even moderately high pressures (approximately 1 atm); at lower pressures, depolarization is due to hyperfine mixing and is believed to be well understood. For vapor phase CH 3 OH, C 6 H 14 , C 6 H 12 , and TMS the relative fractions are found to be pressure dependent, suggesting the importance of termolecular hot atom (or ion) reactions in the slowing-down process. For vapor phase H 2 O and the chloromethanes, the relative fractions are pressure independent. For CCl 4 , Psub(M) = Psub(D) approximately 0.5 in the vapor phase vs. Psub(D) = 1.0 in the liquid phase; fast thermal reactions of Mu likely contribute significantly to this difference in the liquid phase. For H 2 O, Psub(M) approximately 0.9 and Psub(D) approximately 0.1 in the vapor phase vs. Psub(D) approximately 0.6 and Psub(M) approximately 0.2 in the liquid phase. Water appears to be the one unequivocal case where the basic charge exchange/hot atom model is inappropriate in the condensed phase, suggesting, therefore, that radiation-induced 'spur' effects play a major role

  16. Experimental study of the structure of vapor phase during boiling of R134a on heat exchange surfaces of heat pump

    Science.gov (United States)

    Ustinov, D. A.; Sukhikh, A. A.; Sidenkov, D. V.; Ustinov, V. A.

    2017-10-01

    The heat supply by means of heat pumps is considered now as a rational method of local heating which can lead to economy of primary fuel. At use of low-potential heat, for example, the heat of a ground (5 … 18 °C) or ground waters (8 … 10°C) only small depressing of temperature of these sources (on 3 … 5°C) is possible that demands application of heat exchangers with intensified heatmass transfer surfaces. In thermal laboratory of TOT department the 200 W experimental installation has been developed for research of process of boiling of freon R134a. The principle of action of the installation consists in realisation of reverse thermodynamic cycle and consecutive natural measurement of characteristics of elements of surfaces of heat exchangers of real installations at boiling points of freon from-10°C to +10°C and condensing temperatures from 15°C to 50 °C. The evaporator casing has optical windows for control of process of boiling of freon on ribbed on technology of distorting cut tubes. Temperature measurement in characteristic points of a cycle is provided by copper-constantan thermocouples which by means of ADT are connected to the computer that allows treat results of measurements in a real time mode. The structure of a two-phase flow investigated by means of the optical procedure based on laser technique.

  17. Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

    KAUST Repository

    Soltani, S.

    2017-02-17

    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

  18. Vapor deposition in basaltic stalactites, Kilauea, Hawaii

    Science.gov (United States)

    Baird, A. K.; Mohrig, D. C.; Welday, E. E.

    Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

  19. Numerical simulation of superheated vapor bubble rising in stagnant liquid

    Science.gov (United States)

    Samkhaniani, N.; Ansari, M. R.

    2017-09-01

    In present study, the rising of superheated vapor bubble in saturated liquid is simulated using volume of fluid method in OpenFOAM cfd package. The surface tension between vapor-liquid phases is considered using continuous surface force method. In order to reduce spurious current near interface, Lafaurie smoothing filter is applied to improve curvature calculation. Phase change is considered using Tanasawa mass transfer model. The variation of saturation temperature in vapor bubble with local pressure is considered with simplified Clausius-Clapeyron relation. The couple velocity-pressure equation is solved using PISO algorithm. The numerical model is validated with: (1) isothermal bubble rising and (2) one-dimensional horizontal film condensation. Then, the shape and life time history of single superheated vapor bubble are investigated. The present numerical study shows vapor bubble in saturated liquid undergoes boiling and condensation. It indicates bubble life time is nearly linear proportional with bubble size and superheat temperature.

  20. A Simple Approach to Enhance the Water Stability of a Metal-Organic Framework.

    Science.gov (United States)

    Shih, Yung-Han; Kuo, Yu-Ching; Lirio, Stephen; Wang, Kun-Yun; Lin, Chia-Her; Huang, Hsi-Ya

    2017-01-01

    A facile method to improve the feasibility of water-unstable metal-organic frameworks in an aqueous environment has been developed that involves imbedding in a polymer monolith. The effect of compartment type during polymerization plays a significant role in maintaining the crystalline structure and thermal stability of the MOFs, which was confirmed by powder X-ray diffraction (PXRD) and thermogravimetric analysis (TGA), respectively. The MOF-polymer composite prepared in a narrow compartment (column, ID 0.8 mm) has better thermal and chemical stability than that prepared in a broad compartment (vial, ID 7 mm). The developed MOF-polymer composite was applied as an adsorbent in solid-phase microextraction of nine non-steroidal anti-inflammatory drugs (NSAIDs) and could be used for extraction more than 30 times, demonstrating that the proposed approach has potential for industrial applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. A fine-tuned Metal-Organic Framework for Autonomous Indoor Moisture Control .

    KAUST Repository

    Abdul Halim, Racha Ghassan

    2017-06-29

    Conventional adsorbents, namely zeolites and silica gel, are often used to control humidity by adsorbing water; however, adsorbents capable of dual functionality of humidification and dehumidification, offering the desired control of the moisture level at room temperature, has yet to be explored. Here we report Y-shp-MOF-5, a hybrid microporous highly-connected Rare-Earth based metal-organic framework (MOF), with dual functionality for moisture control within the recommended range of relative humidity (45% to 65% RH) set by the American Society of Heating, Refrigerating, and Air-Conditioning Engineers (ASHRAE). Y-shp-MOF-5 exhibits exceptional structural integrity, robustness and unique humidity-control performance as confirmed by the large number (thousand) of conducted water vapor adsorption-desorption cycles. The retained structural integrity and the mechanism of water sorption were corroborated using in situ single crystal X-ray diffraction (SCXRD) studies. The resultant working water uptake of 0.45 g.g-1 is solely regulated by a simple adjustment of the relative humidity, positioning this hydrolytically stable MOF as a prospective adsorbent for humidity control in confined spaces such as space shuttles, aircraft cabins and air-conditioned buildings.

  2. Ultrasensitive humidity detection using metal-organic framework-coated microsensors.

    Science.gov (United States)

    Robinson, Alex L; Stavila, Vitalie; Zeitler, Todd R; White, Michael I; Thornberg, Steven M; Greathouse, Jeffery A; Allendorf, Mark D

    2012-08-21

    The use of metal-organic framework (MOF) thin films to detect water vapor across a wide concentration range is demonstrated using MOF-functionalized quartz surface acoustic wave (SAW) sensors. A range of 3-14,800 ppmv was obtained with thin films of the MOF Cu(3)(benzenetricarboxylate)(2) (Cu-BTC) deposited by an automated layer-by-layer method. Devices coated by a manual technique demonstrated sensitivity from 0.28 to 14,800 ppmv, the limit of our test system. This exceeds the sensitivity of many commercially available sensors. Cu-BTC layers were covalently bonded directly to the silicon oxide surface, allowing devices to be heated beyond 100 °C to desorb water adsorbed in the pores without decomposition, thereby regenerating the sensors. Sensor response as a function of coating thickness was evaluated, showing that the SAW sensor response is bounded by maximum and minimum layer thicknesses. Computer simulation of H(2)O uptake shows a multistep adsorption isotherm defined by initial adsorption at open Cu-sites, followed by pore-filling and finally full saturation. Modeling and experimental results are consistent. Calculated uptake values suggest an efficient adsorption of H(2)O by Cu-BTC. These results provide the first convincing evidence that MOF functionalization of compact sensing technologies such as SAW devices and microcantilevers can compete with state-of-the art devices.

  3. Metal-Organic Frameworks Supported on Nanofiber for Desalination by Direct Contact Membrane Distillation.

    Science.gov (United States)

    Yang, Fan; Efome, Johnson E; Rana, Dipak; Matsuura, Takeshi; Lan, Christopher

    2018-03-22

    Among other applications, metal-organic frameworks (MOFs) are slowly gaining grounds as fillers for desalination composite membranes. In this study, superhydrophobic poly(vinylidene fluoride) nanofibrous membranes were fabricated with MOF (iron 1,3,5-benzenetricarboxylate) loading of up to 5 wt % via electrospinning on a nonwoven substrate. To improve the attachment of nanofibers onto the substrate, a substrate pretreatment method called "solvent basing" was employed. The iron content in the nanofiber, measured by energy-dispersive X-ray spectroscopy, increased proportionally with the increase of the MOF concentration in the spinning dope, indicating a uniform distribution of MOF in the nanofiber. The water contact angle increased up to 138.06 ± 2.18° upon the incorporation of 5 wt % MOF, and a liquid entry pressure of 82.73 kPa could be maintained, making the membrane useful for direct contact membrane distillation experiments. The membrane was stable for the entire operating period of 5 h, exhibiting 2.87 kg/m 2 ·h of water vapor flux and 99.99% NaCl (35 g/L) rejection when the feed and permeate temperature were 48 and 16 °C, respectively. Immobilization of MOF on nanofibers with the enhanced attachment was proven by inductively coupled mass spectrometry analysis, by which no Fe 2+ could be found in the permeate to the detection limit of ppt.

  4. Smart Resonant Gas Sensor and Switch Operating in Air With Metal-Organic Frameworks Coating

    KAUST Repository

    Jaber, Nizar

    2017-11-03

    We report a resonant gas sensor, uniformly coated with a metal-organic framework (MOF), and excited it near the higher order modes for a higher attained sensitivity. Also, switching upon exceeding a threshold value is demonstrated by operating the resonator near the bifurcation point and the dynamic pull-in instabilities. The resonator is based on an electrostatically excited clamped-clamped microbeam. The microbeam is fabricated from a polyimide layer coated from the top with Cr/Au and from the bottom with Cr/Au/Cr layer. The geometry of the resonator is optimized to reduce the effect of squeeze film damping, thereby allowing operation under atmospheric pressure. The electrostatic electrode is designed to enhance the excitation of the second mode of vibration with the minimum power required. Significant frequency shift (kHz) is demonstrated for the first time upon water vapor, acetone, and ethanol exposure due to the MOF functionalization and the higher order modes excitation. Also, the adsorption dynamics and MOF selectivity is investigated by studying the decaying time constants of the response upon gas exposure.

  5. Vaporization of fault water during seismic slip

    Science.gov (United States)

    Chen, Jianye; Niemeijer, André R.; Fokker, Peter A.

    2017-06-01

    Laboratory and numerical studies, as well as field observations, indicate that phase transitions of pore water might be an important process in large earthquakes. We present a model of the thermo-hydro-chemo-mechanical processes, including a two-phase mixture model to incorporate the phase transitions of pore water, occurring during fast slip (i.e., a natural earthquake) in order to investigate the effects of vaporization on the coseismic slip. Using parameters from typical natural faults, our modeling shows that vaporization can indeed occur at the shallow depths of an earthquake, irrespective of the wide variability of the parameters involved (sliding velocity, friction coefficient, gouge permeability and porosity, and shear-induced dilatancy). Due to the fast kinetics, water vaporization can cause a rapid slip weakening even when the hydrological conditions of the fault zone are not favorable for thermal pressurization, e.g., when permeability is high. At the same time, the latent heat associated with the phase transition causes the temperature rise in the slip zone to be buffered. Our parametric analyses reveal that the amount of frictional work is the principal factor controlling the onset and activity of vaporization and that it can easily be achieved in earthquakes. Our study shows that coseismic pore fluid vaporization might have played important roles at shallow depths of large earthquakes by enhancing slip weakening and buffering the temperature rise. The combined effects may provide an alternative explanation for the fact that low-temperature anomalies were measured in the slip zones at shallow depths of large earthquakes.

  6. A chemical and fluid dynamic study of the chemical vapor deposition of aluminum nitride in a vertical reactor

    Science.gov (United States)

    Bather, Wayne Anthony

    The metalorganic chemical vapor deposition (MOCVD) growth of compound semiconductors has become important in producing many high performance electronic and optoelectronic devices from the wide bandgaps III-V nitrides, for example, aluminum nitride (AlN). A systematic theoretical and experimental investigation of the chemistry and mass transport process in a MOCVD system can yield predictive models of the deposition process. The chemistries and fluid dynamics of the MOCVD growth of AlN in a vertical reactor is analyzed and characterized in order to parameterize and model the deposition process. A Fourier Transform Infrared (FTIR) spectroscopic study of the predeposition reactions between trimethylaluminum (TMAl) and ammonia (NHsb3) is carried out in a static gas cell to examine the primary homogeneous gas phase reactions, pyrolysis of the reactants, and adduct formation, possibly accompanied by elimination reactions. A series of reactions, based on laboratory studies and literature review, is then proposed to model the deposition process. All pertinent kinetic, thermochemical, and transport properties were obtained. Utilizing a mass transport model, we performed computational fluid dynamics calculations using the FLUENT software package. We determined temperature, velocity, and concentration profiles, along with deposition rates inside the experimental vertical CVD reactor in the Howard University Material Science Research Center of Excellence. Experimental deposition rate data were found to be in good agreement with those predicted from the simulations, thus validating the proposed model. The control of the homogeneous gas phase reaction leading to the formation and subsequent decomposition of the adduct is critical to the formation of device-grade AlN films. Many basic processes occurring during MOCVD of AlN are still not completely understood, and none of the detailed surface reaction mechanisms are known.

  7. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  8. Vapor-wall deposition in chambers: theoretical considerations.

    Science.gov (United States)

    McVay, Renee C; Cappa, Christopher D; Seinfeld, John H

    2014-09-02

    In order to constrain the effects of vapor-wall deposition on measured secondary organic aerosol (SOA) yields in laboratory chambers, researchers recently varied the seed aerosol surface area in toluene oxidation and observed a clear increase in the SOA yield with increasing seed surface area (Zhang, X.; et al. Proc. Natl. Acad. Sci. U.S.A. 2014, 111, 5802). Using a coupled vapor-particle dynamics model, we examine the extent to which this increase is the result of vapor-wall deposition versus kinetic limitations arising from imperfect accommodation of organic species into the particle phase. We show that a seed surface area dependence of the SOA yield is present only when condensation of vapors onto particles is kinetically limited. The existence of kinetic limitation can be predicted by comparing the characteristic time scales of gas-phase reaction, vapor-wall deposition, and gas-particle equilibration. The gas-particle equilibration time scale depends on the gas-particle accommodation coefficient αp. Regardless of the extent of kinetic limitation, vapor-wall deposition depresses the SOA yield from that in its absence since vapor molecules that might otherwise condense on particles deposit on the walls. To accurately extrapolate chamber-derived yields to atmospheric conditions, both vapor-wall deposition and kinetic limitations must be taken into account.

  9. Vapor concentration monitor

    Science.gov (United States)

    Bayly, John G.; Booth, Ronald J.

    1977-01-01

    An apparatus for monitoring the concentration of a vapor, such as heavy water, having at least one narrow bandwidth in its absorption spectrum, in a sample gas such as air. The air is drawn into a chamber in which the vapor content is measured by means of its radiation absorption spectrum. High sensitivity is obtained by modulating the wavelength at a relatively high frequency without changing its optical path, while high stability against zero drift is obtained by the low frequency interchange of the sample gas to be monitored and of a reference sample. The variable HDO background due to natural humidity is automatically corrected.

  10. Increased Thermal Conductivity in Metal-Organic Heat Carrier Nanofluids.

    Science.gov (United States)

    Nandasiri, Manjula I; Liu, Jian; McGrail, B Peter; Jenks, Jeromy; Schaef, Herbert T; Shutthanandan, Vaithiyalingam; Nie, Zimin; Martin, Paul F; Nune, Satish K

    2016-06-15

    Metal-organic heat carriers (MOHCs) are recently developed nanofluids containing metal-organic framework (MOF) nanoparticles dispersed in various base fluids including refrigerants (R245Fa) and methanol. Here, we report the synthesis and characterization of MOHCs containing nanoMIL-101(Cr) and graphene oxide (GO) in an effort to improve the thermo-physical properties of various base fluids. MOHC/GO nanocomposites showed enhanced surface area, porosity, and nitrogen adsorption compared with the intrinsic nanoMIL-101(Cr) and the properties depended on the amount of GO added. MIL-101(Cr)/GO in methanol exhibited a significant increase in the thermal conductivity (by approximately 50%) relative to that of the intrinsic nanoMIL-101(Cr) in methanol. The thermal conductivity of the base fluid (methanol) was increased by about 20%. The increase in the thermal conductivity of nanoMIL-101(Cr) MOHCs due to GO functionalization is explained using a classical Maxwell model.

  11. Nano-architecture of metal-organic frameworks

    Science.gov (United States)

    Milichko, Valentin A.; Zalogina, Anastasiia; Mingabudinova, Leila R.; Vinogradov, Alexander V.; Ubyivovk, Evgeniy; Krasilin, Andrei A.; Mukhin, Ivan; Zuev, Dmitry A.; Makarov, Sergey V.; Pidko, Evgeny A.

    2017-09-01

    Change the shape and size of materials supports new functionalities never found in the sources. This strategy has been recently applied for porous crystalline materials - metal-organic frameworks (MOFs) to create hollow nanoscale structures or mesostructures with improved functional properties. However, such structures are characterized by amorphous state or polycrystallinity which limits their applicability. Here we follow this strategy to create such nano- and mesostructures with perfect crystallinity and new photonics functionalities by laser or focused ion beam fabrication.

  12. Controlling Thermal Expansion: A Metal?Organic Frameworks Route

    OpenAIRE

    Balestra, Salvador R. G.; Bueno-Perez, Rocio; Hamad, Said; Dubbeldam, David; Ruiz-Salvador, A. Rabdel; Calero, Sofia

    2016-01-01

    Controlling thermal expansion is an important, not yet resolved, and challenging problem in materials research. A conceptual design is introduced here, for the first time, for the use of metal?organic frameworks (MOFs) as platforms for controlling thermal expansion devices that can operate in the negative, zero, and positive expansion regimes. A detailed computer simulation study, based on molecular dynamics, is presented to support the targeted application. MOF-5 has been selected as model m...

  13. Alkylamine functionalized metal-organic frameworks for composite gas separations

    Energy Technology Data Exchange (ETDEWEB)

    Long, Jeffrey R.; McDonald, Thomas M.; D' Alessandro, Deanna M.

    2018-01-09

    Functionalized metal-organic framework adsorbents with ligands containing basic nitrogen groups such as alkylamines and alkyldiamines appended to the metal centers and method of isolating carbon dioxide from a stream of combined gases and carbon dioxide partial pressures below approximately 1 and 1000 mbar. The adsorption material has an isosteric heat of carbon dioxide adsorption of greater than -60 kJ/mol at zero coverage using a dual-site Langmuir model.

  14. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  15. Solid phase extraction for analysis of biogenic carbonates by electrothermal vaporization inductively coupled plasma mass spectrometry (ETV-ICP-MS): an investigation of rare earth element signatures in otolith microchemistry

    International Nuclear Information System (INIS)

    Arslan, Zikri; Paulson, Anthony J.

    2003-01-01

    Uptake of trace elements into fish otoliths is governed by several factors such as life histories and environment in addition to stock and species differences. In an attempt to elucidate the elemental signatures of rare earth elements (REEs) in otoliths, a solid phase extraction (SPE) protocol was used in combination with electrothermal vaporization (ETV) as a sample introduction procedure for the determinations by inductively coupled plasma quadrupole mass spectrometry (ICP-MS). Effects of various parameters, such as carrier gas flow rate, atomization temperature and chemical modification, were examined for optimization of the conditions by ETV-ICP-MS. Atomization was achieved at 2800 deg. C. Lower temperatures (i.e. 2600 deg. C) resulted in severe memory problems due to incomplete atomization. Palladium was used as a chemical modifier. It was found that an increase in Pd concentration up to 0.5 μg in the injection volume (70 μl) led up to four-fold enhancement in the integrated signals. This phenomenon is attributed to the carrier effect of Pd rather than the stabilization since no significant losses were observed for high temperature drying around 700 deg. C even in the absence of Pd. Preconcentration was performed on-line at pH 5 by using a mini-column of Toyopearl AF-Chelate 650M chelating resin, which also eliminated the calcium matrix of otolith solutions. After preconcentration of 6.4 ml of solution, the concentrate was collected in 0.65 ml of 0.5% (v/v) HNO 3 in autosampler cups, and then analyzed by ETV-ICP-MS. The method was validated with the analysis of a fish otolith certified reference material (CRM) of emperor snapper, and then applied to samples. Results obtained from otoliths of fish captured in the same habitat indicated that otolith rare earth element concentrations are more dependent on environmental conditions of the habitat than on species differences

  16. A rare earth-based metal-organic framework for moisture removal and control in confined spaces

    KAUST Repository

    Eddaoudi, Mohamed

    2017-04-13

    A method for preparing a metal-organic framework (MOF) comprising contacting one or more of a rare earth metal ion component with one or more of a tetratopic ligand component, sufficient to form a rare earth-based MOF for controlling moisture in an environment. A method of moisture control in an environment comprising adsorbing and/or desorbing water vapor in an environment using a MOF, the MOF including one or more of a rare earth metal ion component and one or more of a tetratopic ligand component. A method of controlling moisture in an environment comprising sensing the relative humidity in the environment comprising a MOF; and adsorbing water vapor on the MOF if the relative humidity is above a first level, sufficient to control moisture in an environment. The examples relate to a MOF created from 1,2,4,5-Tetrakis(4-carboxyphenyl )benzene (BTEB) as tetratopic ligand, 2-fluorobenzoic acid and Y(NO3)3, Tb(NO3)3 and Yb(NO3)3 as rare earth metals.

  17. Enthalpy of Vaporization and Vapor Pressures: An Inexpensive Apparatus

    Science.gov (United States)

    Battino, Rubin; Dolson, David A.; Hall, Michael A.; Letcher, Trevor M.

    2007-01-01

    A simple and inexpensive method to determine the enthalpy of vaporization of liquids by measuring vapor pressure as a function of temperature is described. The vapor pressures measured with the stopcock cell were higher than the literature values and those measured with the sidearm rubber septum cell were both higher and lower than literature…

  18. Vaporization of irradiated droplets

    International Nuclear Information System (INIS)

    Armstrong, R.L.; O'Rourke, P.J.; Zardecki, A.

    1986-01-01

    The vaporization of a spherically symmetric liquid droplet subject to a high-intensity laser flux is investigated on the basis of a hydrodynamic description of the system composed of the vapor and ambient gas. In the limit of the convective vaporization, the boundary conditions at the fluid--gas interface are formulated by using the notion of a Knudsen layer in which translational equilibrium is established. This leads to approximate jump conditions at the interface. For homogeneous energy deposition, the hydrodynamic equations are solved numerically with the aid of the CON1D computer code (''CON1D: A computer program for calculating spherically symmetric droplet combustion,'' Los Alamos National Laboratory Report No. LA-10269-MS, December, 1984), based on the implict continuous--fluid Eulerian (ICE) [J. Comput. Phys. 8, 197 (1971)] and arbitrary Lagrangian--Eulerian (ALE) [J. Comput. Phys. 14, 1227 (1974)] numerical mehtods. The solutions exhibit the existence of two shock waves propagating in opposite directions with respect to the contact discontinuity surface that separates the ambient gas and vapor

  19. Vapor liquid fraction determination

    International Nuclear Information System (INIS)

    1980-01-01

    This invention describes a method of measuring liquid and vapor fractions in a non-homogeneous fluid flowing through an elongate conduit, such as may be required with boiling water, non-boiling turbulent flows, fluidized bed experiments, water-gas mixing analysis, and nuclear plant cooling. (UK)

  20. Heat of vaporization spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, D. Jr.

    1979-03-01

    Multilayer desorption measurements of various substances adsorbed on a stainless-steel substrate are found to exhibit desorption profiles consistent with a zeroth-order desorption model. The singleness of the desorption transients together with their narrow peak widths makes the technique ideally suited for a heat of vaporization spectrometer for either substance analysis or identification.