Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Ti₃SiC₂ Synthesis by Powder Metallurgical Methods

OpenAIRE

Kero, Ida; Antti, Marta-Lena; Odén, Magnus

2007-01-01

Titanium silicon carbide MAX phase was synthesised by a powder metallurgical method from ball milled TiC/Si powders of two different compositions, with TiC/Si ratios of 3:2 and 3:2.2 respectively. The cold pressed samples were analysed by dilatometry under flowing argon or sintered under vacuum for different times. The sintered samples were evaluated using x-ray diffraction (XRD). This study showed that titanium carbide was always present as a secondary phase and silicon carbide accompanied t...

Cleaner metallurgical industry in Serbia: a road to the sustainable development

Directory of Open Access Journals (Sweden)

D. Panias

2009-01-01

Full Text Available Since the sustainable development has been a global and fundamental objecttive, a metallurgical industrial sector faces some of the most difficult sustainability challenges of any industrial sector. On the other hand, the metallurgical production in Serbia is a very important part of the economy. Due to present facilities and technologies, metallurgical companies face a great challenge to fulfill the requirements introduced by legislature referring to the cleaner production and sustainable development. The state of art in the production, facilities, pollution with some answers to imposed challenges is presented.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Evolution of silicon sensor technology in particle physics

CERN Document Server

Hartmann, Frank

2017-01-01

This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to act...

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

Science.gov (United States)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

The beryllium production at Ulba metallurgical plant (Ust-Kamenogrsk, Kazakhstan)

Energy Technology Data Exchange (ETDEWEB)

Dvinskykh, E.M.; Savchuk, V.V.; Tuzov, Y.V. [Ulba Metallurgical Plant (Zavod), Ust-Kamenogorsk, Abay prospect 102 (Kazakhstan)

1998-01-01

The Report includes data on beryllium production of Ulba metallurgical plant, located in Ust-Kamenogorsk (Kazakhstan). Beryllium production is showed to have extended technological opportunities in manufacturing semi-products (beryllium ingots, master alloys, metallic beryllium powders, beryllium oxide) and in production of structural beryllium and its parts. Ulba metallurgical plant owns a unique technology of beryllium vacuum distillation, which allows to produce reactor grades of beryllium with a low content of metallic impurities. At present Ulba plant does not depend on raw materials suppliers. The quantity of stored raw materials and semi-products will allow to provide a 25-years work of beryllium production at a full capacity. The plant has a satisfactory experience in solving ecological problems, which could be useful in ITER program. (author)

Cooperation in the field of materials and metallurgical technologies

International Nuclear Information System (INIS)

Pilous, V.; Kletecka, Z.; Matejovic, K.

1989-01-01

The SKODA Works cooperate extensively with the Mechanical and Electrical Engineering College in Plzen and with other organizations in many branches of science and technology, among others in the field of materials science and metallurgical technologies. For instance, the technology was mastered of welding low-pressure rotors from a medium-alloy high-strength steel with reduced carbon content of the CrNiMoV type, with yield points of 600 MPa in the basic material and 550 MPa in the welded joint. The welded rotor is used in three low-pressure parts of a 1000 MW steam turbine for a nuclear power plant, which is also produced at SKODA. Problems of protection against corrosion and erosion in saturated steam turbines, caused by wet steam at pressures of 0.5 to 5 MPa and humidity as high as 11%, were also solved. A complex of problems was tackled in the production of reactor pressure vessels. It was found that heat treatment of 25Cr/13Ni overlays of the CrMoV reactor steel at 665 degC results in the formation of a carburized zone between the overlay and the CrMoV steel. This zone constituted a good barrier against the diffusion of hydrogen from the austenitic overlay to the steel. The width of the zone where the diffusion had taken place did not increase in the working conditions, i.e. under the effect of a temperature of 320 degC, while the hardness of this zone increased considerably due to the redistribution of carbon within the 1.6 μm width. The occurrence of the carburized high-hardness zone had a favourable effect on the stabilization of the rate of crack propagation and on its diversion. Recovery annealing at 480 degC is suitable for reducing the hydrogen content of the austenitic overlays. (P.A.). 5 figs., 14 refs

Porous silicon technology for integrated microsystems

Science.gov (United States)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Proceedings of the 48. conference of metallurgists : international symposium on process control applications in mining and metallurgical plants

Energy Technology Data Exchange (ETDEWEB)

Shang, H. [Laurentian Univ., Sudbury, ON (Canada). School of Engineering; Ryan, L. [Barrick Gold Corp., Toronto, ON (Canada); Kennedy, S. [Barrick Gold Corp., Dar Es Salaam (Tanzania, United Republic of)] (eds.)

2009-07-01

This international symposium on process control applications in mining and metallurgical plants was held to promote economic and sustainable production practices in Canadian industry applications. Topics related to process control in mining and metallurgical plants included expert systems, model-based control technology, as well as recent advances in simulation, monitoring, and optimization techniques. Methods of improving the process and energy efficiency of mining and metallurgical plants were discussed along with technologies designed to improve monitoring accuracy. The symposium was divided into the following 5 sessions: (1) expert system, control, and performance monitoring, (2) flotation, (3) metallurgical processes, modelling, (4) mining applications, and (5) monitoring, analysis. The symposium featured 23 presentations, of which 2 have been catalogued separately for inclusion in this database. refs., tabs., figs.

Centrifugal Casting Features/Metallurgical Characterization of Aluminum Alloys

International Nuclear Information System (INIS)

Chirita, G.; Soares, D.; Cruz, D.; Silva, F. S.; Stefanescu, I.

2008-01-01

This paper deals with the study of centrifugal effects on aluminium castings under high G values. Most of the studies in this domain (FGMs obtained by centrifugal casting) deal with functionally graded composites reinforced with a solid phase such as silicon particles or others. However, in this study it will be shown that unreinforced aluminium alloys may be significantly influenced by the centrifugal effect and that functionally graded castings are also obtained. It has been observed that the centrifugal effect may increase in some alloys, depending on the relative position in the castings, the rupture strength by approx. 50%, and rupture strain by about 300%, as compared to the gravity casting technique. The Young's modulus may also increase by about 20%. It has also been reported that in vertical centrifugal castings there are mainly three aspects that affect the components thus obtained, namely: fluid dynamics; vibration (inherent to the system); and centrifugal force. These features have a different effect on the castings depending on the aluminium alloy. In this paper, an analysis of the most important effects of the centrifugal casting process on metallurgical features is conducted. A solidification characterization at several points along the mould will be made in order to have an accurate idea of both the fluid dynamics inside the mould during the casting and the solidification behavior in different parts of the component. These two analyses will be related to the metallurgical properties (phase distribution; SDAS; eutectic silicon content and shape, pores density and shape) along the component and mainly along the direction of the centrifugal pressure. A comparison between castings obtained by both centrifugal casting technique and gravity casting technique is made for reference (gravity casting)

Challenges in amorphous silicon solar cell technology

NARCIS (Netherlands)

Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

2000-01-01

Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

Silicon on insulator technology. Characteristics. Applications; Technologies silicium sur isolant. Caracteristiques. Exemples d'application

Energy Technology Data Exchange (ETDEWEB)

Suat, J. P.; Peccoud, L.; Le Goascoz, V.; Garcia, M.; Mackowiak, E.

1975-01-31

The advantages resulting from a SOS (Silicon-on-Sapphire) MOS technology are demonstrated. Experimental results giving the performance of C.MOS and depletion-enrichment P-channel technologies are presented, with an application of Silicon on insulator on development, that is to say a 1024 bits MNOS memory, peripheral circuits being developed according to the depletion-enrichment technology.

Silicon Micromachines for Science and Technology

International Nuclear Information System (INIS)

Bishop, David J.

2002-01-01

The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

Metallurgical Evaluation of the Five-Inch Cylindrical Induction Melter

International Nuclear Information System (INIS)

Imrich, K.J.

2000-01-01

A metallurgical evaluation of the 5-inch cylindrical induction melter (CIM) vessel was performed by the Materials Technology Section to evaluate the metallurgical condition after operating for approximately 375 hours at 1400 to 1500 Degrees Celsius during a 2 year period. Results indicate that wall thinning and significant grain growth occurred in the lower portion of the conical section and the drain tube. No through-wall penetrations were found in the cylindrical and conical sections of the CIM vessel and only one leak site was identified in the drain tube. Failure of the drain tube was associated with a localized over heating and intercrystalline fracture

Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

International Nuclear Information System (INIS)

Khattack, C. P.; Joyce, D. B.; Schmid, F.

2001-01-01

This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Metallurgical plasma torches

International Nuclear Information System (INIS)

Shapovalov, V.A.; Latash, Yu.V.

2000-01-01

The technological equipment for the plasma heating of metals, plasma melting and plasma treatment of the surface is usually developed on the basis of are plasma torches using direct or alternating current. The reasons which partly restrict the industrial application of the plasma torches are the relatively short service life of the electrode (cathode) on which the arc is supported, and the contamination of the treated metal with the products of failure of the electrode. The aim of this work was to determine the reasons for the occurrence of negative phenomena observed in the process of service of plasma torches, and propose suitable approaches to the design of metallurgical plasma torches characterised by a long service life

Crisis management in metallurgical enterprises

Directory of Open Access Journals (Sweden)

B. Gajdzik

2014-07-01

Full Text Available On the basis of report analysis which presents situation in metallurgical sector after 2008 the range of changes implemented in management of metallurgical enterprises was characterised. A definition approach to crisis management was suggested as the process when the enterprise is managed during the breakdown period in market condition of the economy in the way directed towards preventing the negative effects of crisis inside enterprises. The publication presents the key aspects of enterprise management in the period of collapse of the balance between the supply and demand on the metallurgical market.

7th european metallurgical conference EMC 2013

Directory of Open Access Journals (Sweden)

Srećko R. Stopić

2014-02-01

Full Text Available From June 23 – 26, 2013, the GDMB Society for Mining, Metallurgy, Resource and Environmental Technology organized 7th European Metallurgical Conference (EMC 2013 in Weimar, Germany. The previous European metallurgical conferences were organized by  the GDMB in Friedrichshafen (2001, Hanover (2003, Leipzig (2005, Duesseldorf (2007, Innsbruck (2009, and Duesseldorf (2011. The GDMB is a non-profit organization from Clausthal, Germany,,focused on combining science with practical experience in metallurgy, mining, materials engineering, mineral processing, recycling and refining of metals, and  manufacturing of semi- and finishing products. The European Metallurgical conference EMC is one of the most well-known conferences worldwide in the field of non-ferrous metallurgy and is attended regularly by decision makers from industry and universities. The scientific program contained 6 plenary lectures and more than 130 presentations. An extensive poster exhibition was held, during which the authors had an opportunity to introduce their posters to the entire plenum as a part of a brief presentation., The € 500 worth “Poster Award EMC 2011 was awarded to Christoph Pichler from the Montan-University in Leoben, Austria. Not only the most important European countries were represented here, but also more than one third of the lecturers were from countries outside Europe (Canada, Japan, China, USA, South Africa, Australia. The origin of the participants reflects the aim of the organizers: to make this conference a worldwide platform for the scientific exchange of experience and information. The scientific presentations of the conference are presented in Proceedings: Vol. 1: Copper, Precious Metals, Waste effluents Treatment/ Biohydrometallurgical applications; Process Metallurgy, Bridging Non-Ferrous and Ferrous Metallurgy; Vol. 2: Lead and Zinc, Light metals, Sustainable technologies, Sustainable of non-ferrous metals production, Process Control

Supercritical water oxidation benchscale testing metallurgical analysis report

International Nuclear Information System (INIS)

Norby, B.C.

1993-02-01

This report describes metallurgical evaluation of witness wires from a series of tests using supercritical water oxidation (SCWO) to process cutting oil containing a simulated radionuclide. The goal of the tests was to evaluate the technology's ability to process a highly chlorinated waste representative of many mixed waste streams generated in the DOE complex. The testing was conducted with a bench-scale SCWO system developed by the Modell Development Corporation. Significant test objectives included process optimization for adequate destruction efficiency, tracking the radionuclide simulant and certain metals in the effluent streams, and assessment of reactor material degradation resulting from processing a highly chlorinated waste. The metallurgical evaluation described herein includes results of metallographic analysis and Scanning Electron Microscopy analysis of witness wires exposed to the SCWO environment for one test series

Slag Treatment Followed by Acid Leaching as a Route to Solar-Grade Silicon

NARCIS (Netherlands)

Meteleva-Fischer, Y.V.; Yang, Y.; Boom, R.; Kraaijveld, B.; Kuntzel, H.

2012-01-01

Refining of metallurgical-grade silicon was studied using a process sequence of slag treatment, controlled cooling, and acid leaching. A slag of the Na2O-CaO-SiO2 system was used. The microstructure of grain boundaries in the treated silicon showed enhanced segregation of impurities, and the

Real time information management for improving productivity in metallurgical complexes

International Nuclear Information System (INIS)

Bascur, O.A.; Kennedy, J.P.

1999-01-01

Applying the latest information technologies in industrial plants has become a serious challenge to management and technical teams. The availability of real time and historical operations information to identify the most critical part of the processing system from mechanical integrity is a must for global plant optimization. Expanded use of plant information on the desktop is a standard tool for revenue improvement, cost reduction, and adherence to production constraints. The industrial component desktop supports access to information for process troubleshooting, continuous improvement and innovation by plant and staff personnel. Collaboration between groups enables the implementation of an overall process effectiveness index based on losses due to equipment availability, production and product quality. The key to designing technology is to use the Internet based technologies created by Microsoft for its marketplace-office automation and the Web. Time derived variables are used for process analysis, troubleshooting and performance assessment. Connectivity between metallurgical complexes, research centers and their business system has become a reality. Two case studies of large integrated mining/metallurgical complexes are highlighted. (author)

Electric arc spraying for restoration and repair of metallurgical equipment parts

Directory of Open Access Journals (Sweden)

В’ячеслав Олександрович Роянов

2016-07-01

Full Text Available It has been shown that the electric arc spraying with the use of powder wires can be used to repair and restore parts of metallurgical equipment. The technology of spraying parts by means of the cored wire Steelcored M8TUV; T462MMIN5 and combinations of steel and aluminum wires to restore shaft-gears, shaft-beams, cranes axles for the foundry of the Moldavian Metallurgical Plant has been introduced. The composition of the flux-cored wires MMP-2,3 developed at the Department of Equipment and welding production technology of PSTU that provides the required hardness and adhesion of the coating and the substrate have been shown and the results of the coatings properties studies have been published. Studies have shown matching properties of the coatings to be used for details of the metallurgical equipment working under difficult conditions, including the rolls of rolling mills. Cored wire was used for pilot plating of the rolls surface of the skin-rolling stand at the cold-rolling mill at Illich Steel and Iron Works, Mariupol. Residual coating thickness ranged from 15 to 25 microns. Strip sized 0,9 × 1025 mm has been rolled, the squeezing is equal to 0,8...1,0%.

Proceedings of papers. 3. Balkan Metallurgical Conference

International Nuclear Information System (INIS)

Mickovski, Jovan

2003-01-01

This Conference aims to be a central event in the metallurgy research of Balkan, fulfilling the goals to present the most outstanding relevant developments in modern metallurgy; to inspire high standards of excellence in pure and applied metallurgy research; to attract outstanding scientists to present central lectures on modem metallurgical research, and on the challenges imposed by the needs of society; to inspire the young generation of metallurgists in Balkan and other countries. Following these lines, the 3. Balkan Conference on Metallurgy will provide a unique opportunity for academic and industrial metallurgists from the Balkan countries and wider, to exchange ideas, expertise, and experience on topics related to the theme of the Conference - Balkan Metallurgy in Search for New Ways of Development. The aim of the organizers was to bring together distinguished experts, not only to present their work, but also to discuss the major scientific and technological challenges facing metallurgy in this millennium.The 6 sections of the conference were entitled: Section A: Extractive metallurgy; Section B: Physical metallurgy and materials science - ferrous metals and non ferrous metals; Section C: Management, maintenance control and optimization of metallurgical processes; Section D: New technologies and techniques; Section E: Refractory and powder; Section F: Corrosion and protection of metals. Papers relevant to INIS are indexed separately

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Development of deep silicon plasma etching for 3D integration technology

Directory of Open Access Journals (Sweden)

Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Metallurgical Research Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The purpose is to increase basic knowledge of metallurgical processing for controlling the microstructure and mechanical properties of metallic aerospace alloys and...

Deep glass etched microring resonators based on silica-on-silicon technology

DEFF Research Database (Denmark)

Ou, Haiyan; Rottwitt, Karsten; Philipp, Hugh Taylor

2006-01-01

Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented.......Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented....

Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1980-03-01

The R and D was intended to establish the manufacturing technology of a particle non-accelerated growth type silicon thin film crystal, for the purpose of developing a technology for enabling the production of a solar power generation system, whose price is practically 1/100 compared with that of building the system with the current technology, and the R and D was also intended to build the system using such silicon material. While a simple purification method was examined for a low purity metallurgical-grade silicon, a solar-grade silicon (SOG) was developed as the new material this year, with a solar cell experimentally manufactured having a structure directly joined to the substrate material and with evaluation carried out on the characteristic of such solar cell. The application of 'gettering' was tried which was for removing harmful impurities from the substrate obtained from such material, bringing an outlook of manufacturing a solar cell with a conversion efficiency of 10%. Concerning the SOG-Si, the efficiency of 13% or higher was attained through the improvement of the manufacturing process. This was the value comparable to the case of using a conventional high purity monocrystal wafer. Further, the application of an ion implantation method was studied for the purpose of getting a low cost. (NEDO)

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Electrically active defects in solar grade multicrystalline silicon

DEFF Research Database (Denmark)

Dahl, Espen

2013-01-01

Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

TMI-2 VIP Metallurgical Program

International Nuclear Information System (INIS)

Diercks, D.R.; Neimark, L.A.

1991-01-01

The objectives of the TMI-2 VIP Metallurgical Program are to conduct metallurgical examinations and mechanical-property tests on samples of material removed from the lower head of the TMI-2 nuclear reactor in order to deduce the temperatures, determine the mechanical properties, and assess the integrity of the TMI-2 lower head during the loss-of-coolant accident. The TMI-2 Vessel Investigation Project Metallurgical Program is a part of the international TMI-2 Vessel Investigation Project being conducted jointly by the US Nuclear Regulatory Commission and the Organization for Economic Co-operation and Development. Participants in the international project include the US, Japan, the Federal Republic of Germany (FRG), Finland, France, Italy, Spain, Sweden, Switzerland, and the United Kingdom (UK). Fifteen samples have been removed from the lower head and are being examined. Mechanical tests will be conducted on specimens cut from these lower head samples. In addition, archive material from the lower head of the Midland nuclear reactor has been procured for conducting supplemental metallurgical evaluations and mechanical-property determinations. The information obtained from these examinations and tests, supplemented by results obtained from parallel examinations of instrument nozzles, guide tubes, and core debris at Argonne National Laboratory and the Idaho National Engineering Laboratory will be used to deduce a scenario for the loss-of-coolant accident and assess the integrity of the lower head during the accident

Metallurgical structures in a high uranium-silicon alloy

International Nuclear Information System (INIS)

Wyatt, B.S.; Berthiaume, L.C.; Conversi, J.L.

1968-10-01

The effects of fabrication and heat treatment variables on the structure of a uranium -- 3.96 wt% silicon alloy have been studied using optical microscopy, quantitative metallography and hardness determinations. It has been shown that an optimum temperature exists below the peritectoid temperature where the maximum amount of transformation to U 3 Si occurs in a given period of time. The time required to fully transform an as-cast alloy at this optimum temperature is affected by the size of the primary U 3 Si 2 dendrites. With a U 3 Si 2 particle size of <12 μm complete transformation can be achieved in four hours. (author)

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

Microwave-assisted grinding of metallurgical coke

International Nuclear Information System (INIS)

Ruisanchez, E.; Juarez-Perez, E. J.; Arenillas, A.; Bermudez, J. M.; Menendez, J. A.

2014-01-01

Metallurgical cokes are composed of graphitic carbon (s2p2) and different inorganic compounds with very different capacities to absorb microwave radiation. Moreover, due to the electric conductivity shown by the metallurgical cokes, microwave radiation produces electric arcs or microplasmas, which gives rise to hot spots. Therefore, when these cokes are irradiated with microwaves some parts of the particle experiment a rapid heating, while some others do not heat at all. As a result of the different expansion and stress caused by thermal the shock, small cracks and micro-fissures are produced in the particle. The weakening of the coke particles, and therefore an improvement of its grind ability, is produced. This paper studies the microwave-assisted grinding of metallurgical coke and evaluates the grinding improvement and energy saving. (Author)

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

Energy Technology Data Exchange (ETDEWEB)

Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

2009-07-15

The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

The 6th European metallurgical conference EMC 2011: Proceedings review

Directory of Open Access Journals (Sweden)

Srećko R. Stopić

2011-10-01

Full Text Available The GDMB Society for Mining, Metallurgy, Resource and Environmental Technology organized the 6th European Metallurgical Conference (2011 in Duesseldorf from June 26 to 29, 2011. The same venue hosted the most important international metallurgical trade fairs for metallurgy of iron and steel, new casting and thermochemical processes METEC, GIFA, THERMOPROCESS and NEWCAST. The previous European metallurgical conferences were organized by GDMB in Friedrichshafen (2001, Hanover (2003, Leipzig (2005, Duesseldorf (2007, Innsbruck (2009. The GDMB is a non-profit organization situated in Clausthal in Germany, which is related to combining science with the practical experience in metallurgy, mining, materials engineering, mineral processing, recycling and refining of metals, and manufacturing of semi- and finishing products. The European Metallurgical conference EMC is one of the most known conferences worldwide in the field of non-ferrous metallurgy and is attended regularly by the decision makers from the industry and universities. The scientific program contained 6 plenary lectures and more than 160 presentations from 40 countries in 5 parallel series. An extensive poster exhibition was held, during which the authors had an opportunity to introduce their posters to the entire plenum as a part of a brief presentation. The best poster from the Montan-University in Leoben, Austria, was awarded the € 500 'Poster Award EMC 2011'. Not only were the most important European countries represented here, more than one third of the lecturers were from the non-European countries (Canada, Japan, China, USA, South Africa, Australia. The origin of the participants reflects the aim of the organizers: to make this conference a worldwide platform for the scientific exchange of experience and information. More than 400 participants from all over the world participated at this conference. The scientific presentations of the conference are presented in five Proceedings

Analytical control in metallurgical processes

International Nuclear Information System (INIS)

Coedo, A.G.; Dorado, M.T.; Padilla, I.

1998-01-01

This paper illustrates the role of analysis in enabling metallurgical industry to meet quality demands. For example, for the steel industry the demands by the automotive, aerospace, power generation, tinplate packaging industries and issue of environment near steel plants. Although chemical analysis technology continues to advance, achieving improved speed, precision and accuracy at lower levels of detection, the competitiveness of manufacturing industry continues to drive property demands at least at the same rate. Narrower specification ranges, lower levels of residual elements and economic pressures prescribe faster process routes, all of which lead to increased demands on the analytical function. These damands are illustrated by examples from several market sectors in which customer issues are considered together with ther analytical implications. (Author) 5 refs

Crystal Growth Technology

Science.gov (United States)

Scheel, Hans J.; Fukuda, Tsuguo

2004-06-01

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: General aspects of crystal growth technology Silicon Compound semiconductors Oxides and halides Crystal machining Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

Science.gov (United States)

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Substitutes for metallurgical coke in pyrometallurgical processes

Energy Technology Data Exchange (ETDEWEB)

Koshkarov, V.Ya.

1982-08-01

A briquetting process using sulphurous petroleum coke and a bituminous binder is described. The characteristics of briquettes made of petroleum coke, blends of coal and petroleum coke, and coal and metallurgical coke are compared. The prospect of replacing 25 to 50% of the metallurgical coke used in lime kilns with non-calcined petroleum coke briquettes is described. (4 refs.)

Application of logistic principles in metallurgical production

Directory of Open Access Journals (Sweden)

D. Malindžák

2012-07-01

Full Text Available Metallurgical production processes (MPP consist of continuous and discrete types of technology operation, transport, manipulation and storing processes regards the flow of material and also the equipment and machines. Other specifics are: long production cycles, great inertia, tree structure of production processes (from roots up to the leaves, high level of investments etc. These characteristics resulted in some specifics of production logistics. This article deals with these specifics and explains it using the conditions of production processes of continuous slab casting, their heating in push furnaces at rolling temperature and rolling itself in hot wideband steel mill.

Sustainable cost reduction by lean management in metallurgical processes

Directory of Open Access Journals (Sweden)

A. V. Todorut

2016-10-01

Full Text Available This paper focuses on the need for sustainable cost reduction in the metallurgical industry by applying Lean Management (LM tools and concepts in metallurgical production processes leading to increased competitiveness of corporations in a global market. The paper highlights that Lean Management is a novel way of thinking, adapting to change, reducing waste and continuous improvement, leading to sustainable development of companies in the metallurgical industry. The authors outline the main Lean Management instruments based on recent scientific research and include a comparative analysis of other tools, such as Sort, Straighten, Shine, Standardize, Sustain (5S, Visual Management (VM, Kaizen, Total Productive Maintenance (TPM, Single-Minute Exchange of Dies (SMED, leading to a critical appraisal of their application in the metallurgical industry.

Technology for Treatment of Liquid Radioactive Waste Generated during Uranium and Plutonium Chemical and Metallurgical Manufacturing in FSUE PO Mayak - 13616

Energy Technology Data Exchange (ETDEWEB)

Adamovich, D. [SUE MosSIA Radon, 2/14 7th Rostovsky lane, Moscow, 119121 (Russian Federation); Batorshin, G.; Logunov, M.; Musalnikov, A. [FSUE ' PO Mayak' , 31 av. Lenin, Ozyorsk, Chelyabinsk region, 456780 (Russian Federation)

2013-07-01

Created technological scheme for treatment of liquid radioactive waste generated while uranium and plutonium chemical and metallurgical manufacturing consists of: - Liquid radioactive waste (LRW) purification from radionuclides and its transfer into category of manufacturing waste; - Concentration of suspensions containing alpha-nuclides and their further conversion to safe dry state (calcinate) and moving to long controlled storage. The following technologies are implemented in LRW treatment complex: - Settling and filtering technology for treatment of liquid intermediate-level waste (ILW) with volume about 1500m{sup 3}/year and alpha-activity from 10{sup 6} to 10{sup 8} Bq/dm{sup 3} - Membrane and sorption technology for processing of low-level waste (LLW) of radioactive drain waters with volume about 150 000 m{sup 3}/year and alpha-activity from 10{sup 3} to 10{sup 4} Bq/dm{sup 3}. Settling and filtering technology includes two stages of ILW immobilization accompanied with primary settling of radionuclides on transition metal hydroxides with the following flushing and drying of the pulp generated; secondary deep after settling of radionuclides on transition metal hydroxides with the following solid phase concentration by the method of tangential flow ultrafiltration. Besides, the installation capacity on permeate is not less than 3 m{sup 3}/h. Concentrates generated are sent to calcination on microwave drying (MW drying) unit. Membrane and sorption technology includes processing of averaged sewage flux by the method of tangential flow ultrafiltration with total capacity of installations on permeate not less than 18 m{sup 3}/h and sorption extraction of uranium from permeate on anionite. According to radionuclide contamination level purified solution refers to general industrial waste. Concentrates generated during suspension filtering are evaporated in rotary film evaporator (RFE) in order to remove excess water, thereafter they are dried on infrared heating

Selection of human capital in metallurgical companies using information technology (IT

Directory of Open Access Journals (Sweden)

I. Iancu

2013-10-01

Full Text Available Personnel selection is a process that takes place in a company in order to have better business performance and competitive advantage. Nowadays, companies have realized the importance of human capital as a necessity for survival in today’s competitive market. There are several methods for selecting staff, but this paper seeks to demonstrate that this selection can be done with the help of an expert system. Metallurgical companies face even greater challenges for managing personnel selection. This research will discover and test the key elements of management personnel selection and implementation of an expert system.

Production of iron from metallurgical waste

Science.gov (United States)

Hendrickson, David W; Iwasaki, Iwao

2013-09-17

A method of recovering metallic iron from iron-bearing metallurgical waste in steelmaking comprising steps of providing an iron-bearing metallurgical waste containing more than 55% by weight FeO and FeO equivalent and a particle size of at least 80% less than 10 mesh, mixing the iron-bearing metallurgical waste with a carbonaceous material to form a reducible mixture where the carbonaceous material is between 80 and 110% of the stoichiometric amount needed to reduce the iron-bearing waste to metallic iron, and as needed additions to provide a silica content between 0.8 and 8% by weight and a ratio of CaO/SiO.sub.2 between 1.4 and 1.8, forming agglomerates of the reducible mixture over a hearth material layer to protect the hearth, heating the agglomerates to a higher temperature above the melting point of iron to form nodules of metallic iron and slag material from the agglomerates by melting.

Technology for the compatible integration of silicon detectors with readout electronics

International Nuclear Information System (INIS)

Zimmer, G.

1984-01-01

Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Metallurgical coating system

International Nuclear Information System (INIS)

Daniels, L.C.; Whittaker, G.S.

1984-01-01

The present invention relates to a novel metallurgical coating system which provides corrosion resistance and non-stick properties to metallic components which are subjected to unusually severe operating conditions. The coating system comprises a first layer comprising tantalum which is deposited upon a substrate and a second layer comprising molybdenum disilicide which is deposited upon the first layer

Effect of silicon content and defects on the lifetime of ductile cast iron

Directory of Open Access Journals (Sweden)

Alhussein Akram

2014-06-01

Full Text Available In this work, the influence of microstructure on the mechanical properties has been studied for different grades of ferritic ductile cast iron. Mechanical tests were carried out and the effect of silicon on the resistance of material was well noticed. An increasing silicon content increases the strength and decreases the ductility of material. The lifetime and endurance limit of material were affected by the presence of defects in material and microstructure heterogeneity. Metallurgical characterizations showed that the silicon was highly segregated around graphite nodules which leads to the initiation of cracks. The presence of defects causes the stress concentration and leads to the initiation and propagation of cracks.

Discussion of the Investigation Method on the Reaction Kinetics of Metallurgical Reaction Engineering

Science.gov (United States)

Du, Ruiling; Wu, Keng; Zhang, Jiazhi; Zhao, Yong

Reaction kinetics of metallurgical physical chemistry which was successfully applied in metallurgy (as ferrous metallurgy, non-ferrous metallurgy) became an important theoretical foundation for subject system of traditional metallurgy. Not only the research methods were very perfect, but also the independent structures and systems of it had been formed. One of the important tasks of metallurgical reaction engineering was the simulation of metallurgical process. And then, the mechanism of reaction process and the conversion time points of different control links should be obtained accurately. Therefore, the research methods and results of reaction kinetics in metallurgical physical chemistry were not very suitable for metallurgical reaction engineering. In order to provide the definite conditions of transmission, reaction kinetics parameters and the conversion time points of different control links for solving the transmission and reaction equations in metallurgical reaction engineering, a new method for researching kinetics mechanisms in metallurgical reaction engineering was proposed, which was named stepwise attempt method. Then the comparison of results between the two methods and the further development of stepwise attempt method were discussed in this paper. As a new research method for reaction kinetics in metallurgical reaction engineering, stepwise attempt method could not only satisfy the development of metallurgical reaction engineering, but also provide necessary guarantees for establishing its independent subject system.

HIT Solar Cells with N-Type Low-Cost Metallurgical Si

Directory of Open Access Journals (Sweden)

Xing Yang

2018-01-01

Full Text Available A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

Design and development of fluidized bed reactor system for production of trichlorosilane as a precursor for high purity silicon

International Nuclear Information System (INIS)

Kumar, Rajesh; Mohan, Sadhana; Bhanja, K.; Nayak, S.; Bhattacharya, S.K.

2009-01-01

Trichlorosilane is widely used as precursor material for production of high purity silicon. It is mainly produced by reaction of metallurgical grade silicon with anhydrous HCl gas in a fluidized bed reactor. To develop this process on commercial scale a pilot size fluidized bed reactor system was designed and developed and successfully operated. This paper discusses the critical issues related to these activities. (author)

Analytical study of getting clinker from metallurgical wastes

Directory of Open Access Journals (Sweden)

Володимир Петрович Кравченко

2016-07-01

Full Text Available The opportunities to get clinker (cement on the basis of 2-component mixtures of raw materials: waste slag + limestone (less than 10mm fraction unsuitable for sinter production and being a technological waste of preparing raw materials for steel production have been investigated. Chemical compositions of waste slag and limestone wastes were investigated in the central laboratory at the Illych plant. The waste slag was got at the «Ilyich» plant while waste limestone - less than 10 mm fraction - was got in the dumps of the mine group in Komsomolsk. Taking into account chemical composition fluctuations of the waste dump slags and limestone within a few percent, the optimal ratio of raw materials is 55-65% limestone waste, while it is 35-45% waste slag. The clinker quality is evaluated by its hydraulic module, which is equal to: m = 2,37 and is determined on the basis of the chemical composition of the 2-component raw material mixture. For this method of clinker production, the value of the hydraulic module is rather high; and the possibility of obtaining high-quality clinker of metallurgical wastes has been confirmed. The offered method for producing clinker makes it possible to utilize metallurgical wastes and to get substantial ecological and economic benefits

Sustainable recycling technologies for Solar PV off-grid system

Science.gov (United States)

Uppal, Bhavesh; Tamboli, Adish; Wubhayavedantapuram, Nandan

2017-11-01

Policy makers throughout the world have accepted climate change as a repercussion of fossil fuel exploitation. This has led the governments to integrate renewable energy streams in their national energy mix. PV off-grid Systems have been at the forefront of this transition because of their permanently increasing efficiency and cost effectiveness. These systems are expected to produce large amount of different waste streams at the end of their lifetime. It is important that these waste streams should be recycled because of the lack of available resources. Our study found that separate researches have been carried out to increase the efficiencies of recycling of individual PV system components but there is a lack of a comprehensive methodical research which details efficient and sustainable recycling processes for the entire PV off-grid system. This paper reviews the current and future recycling technologies for PV off-grid systems and presents a scheme of the most sustainable recycling technologies which have the potential for adoption. Full Recovery End-of-Life Photovoltaic (FRELP) recycling technology can offer opportunities to sustainably recycle crystalline silicon PV modules. Electro-hydrometallurgical process & Vacuum technologies can be used for recovering lead from lead acid batteries with a high recovery rate. The metals in the WEEE can be recycled by using a combination of biometallurgical technology, vacuum metallurgical technology and other advanced metallurgical technologies (utrasonical, mechano-chemical technology) while the plastic components can be effectively recycled without separation by using compatibilizers. All these advanced technologies when used in combination with each other provide sustainable recycling options for growing PV off-grid systems waste. These promising technologies still need further improvement and require proper integration techniques before implementation.

Processing and utilization of metallurgical slag

Directory of Open Access Journals (Sweden)

Alena Pribulová

2016-06-01

Full Text Available Metallurgy and foundry industry create a huge amount of slags that are by-products in production of pig iron, steel and cast iron. Slag is produced in a very large amount in pyrometallurgical processes, and is a huge source of waste if not properly recycled and utilized. With rapid growth of industrialization, land available for land-filling of large quantity of metallurgical slag is being reduced all over the world and disposal cost is becoming increasingly higher. Metallurgical slag from different metallurgical processes treated and utilized in different ways based on different slag characteristics. The most economic and efficient option for reducing metallurgical waste is through recycling, which is a significant contribution to saving natural resources and reducing CO2 emissions. Characteristic of slags as well as its treatment and utilization are given in the paper. Slag from pig iron and steel production is used most frequently in building industry. From experiments using blast furnace slag and granulated blast furnace slag as gravel, and water glass as binder it can be concluded that that the best results – the best values of compression strength and tensile strength were reached by using of 18% of water glass as a solidification activating agent. According to cubic compression strength, mixture from 50% blast furnace gravel, 50% granulated blast furnace slag and 18% water glass falls into C35/45 class of concrete. Such concrete also fulfils strength requirements for road concrete, moreover, it even exceeds them considerably and, therefore, it can find an application in construction of road communications or in production of concrete slabs.

The use of radioisotope tracers in the metallurgical industries

International Nuclear Information System (INIS)

Easey, J.F.

1987-01-01

Radioisotope techniques have been widely used in the metallurgical industries for many years. They have been shown to be very suitable for studying large scale plant and, in many cases, they are the most suitable techniques for such investigations. Applications of radioisotope tracers to some specific metallurgical problems are discussed. (author)

Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

Energy Technology Data Exchange (ETDEWEB)

Dragicevic, M., E-mail: marko.dragicevic@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Auzinger, G. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); CERN, Geneva (Switzerland); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); König, A. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Infineon Technologies Austria AG, Villach (Austria); Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

2014-11-21

Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

Science.gov (United States)

Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

2014-03-01

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

New radionuclide specific laboratory detection system for metallurgical industry

International Nuclear Information System (INIS)

Burianova, L.; Solc, J.; Dryak, P.; Moser, H.; Branger, T.; Garcia-Torano, E.; Peyres, V.; Capogni, M.; Luca, A.; Vodenik, B.; Oliveira, C.; Portugal, L.; Tzika, F.; Lutter, G.; Szucs, L.; Dziel, T.; Burda, O.; Dirk, A.; Martinkovic, J.; Sliskonen, T.; Mattila, A.

2014-01-01

One of the main outputs of the European Metrology Research Programme (EMRP) project 'Ionising radiation metrology for the metallurgical industry' (MetroMetal) was the recommendation on a novel spectrometric detection system optimized for the measurement of radioactivity in metallurgical samples. The recommended system, prototypes of which were constructed at two project partner's laboratories, was characterized by using Monte Carlo (MC) simulations. Six different MC codes were used to model the system and a range of cylindrical samples of cast steel, slag and fume dust. The samples' shape, density, and elemental composition were the same as the ones of the calibration standards developed within the project to provide traceability to end-users. The MC models were used to calculate full-energy peak and total detection efficiencies as well as true coincidence summing correction (TCSC) factors for selected radionuclides of interest in the metallurgical industry: 60 Co, 137 Cs, 192 Ir, 214 Bi, 214 Pb, and 208 Tl. The MC codes were compared to each other on the basis of the calculated detection efficiencies and TCSC factors. In addition, a 'Procedural guide for calculation of TCSC factors for samples in metallurgical industry' was developed for end-users. The TCSC factors reached in certain cases up to 32% showing that the summing effects are of high importance in the close measurement geometries met in routine analysis of metallurgical samples. (authors)

Sustainable recycling technologies for Solar PV off-grid system

Directory of Open Access Journals (Sweden)

Uppal Bhavesh

2017-01-01

Full Text Available Policy makers throughout the world have accepted climate change as a repercussion of fossil fuel exploitation. This has led the governments to integrate renewable energy streams in their national energy mix. PV off-grid Systems have been at the forefront of this transition because of their permanently increasing efficiency and cost effectiveness. These systems are expected to produce large amount of different waste streams at the end of their lifetime. It is important that these waste streams should be recycled because of the lack of available resources. Our study found that separate researches have been carried out to increase the efficiencies of recycling of individual PV system components but there is a lack of a comprehensive methodical research which details efficient and sustainable recycling processes for the entire PV off-grid system. This paper reviews the current and future recycling technologies for PV off-grid systems and presents a scheme of the most sustainable recycling technologies which have the potential for adoption. Full Recovery End-of-Life Photovoltaic (FRELP recycling technology can offer opportunities to sustainably recycle crystalline silicon PV modules. Electro-hydrometallurgical process & Vacuum technologies can be used for recovering lead from lead acid batteries with a high recovery rate. The metals in the WEEE can be recycled by using a combination of biometallurgical technology, vacuum metallurgical technology and other advanced metallurgical technologies (utrasonical, mechano-chemical technology while the plastic components can be effectively recycled without separation by using compatibilizers. All these advanced technologies when used in combination with each other provide sustainable recycling options for growing PV off-grid systems waste. These promising technologies still need further improvement and require proper integration techniques before implementation.

PECVD silicon carbide surface micromachining technology and selected MEMS applications

NARCIS (Netherlands)

Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

2011-01-01

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

Soft restructuring process in metallurgical enterprises in Poland

Directory of Open Access Journals (Sweden)

B. Gajdzik

2015-10-01

Full Text Available This article presents the range and outcomes of soft restructuring in metallurgical enterprises in Poland. The term ‘soft restructuring’ applies to changes in metallurgical enterprises’ employment policy during the period of political transformation in Poland. Steelworks performance under the market economy conditions demanded introducing changes in staff resources. Changes referred both to the staff structure as well as employees’ skills and gradual engaging of the staff in building the steelworks’ competitive advantage.

Energy-dissipation-model for metallurgical multi-phase-systems

Energy Technology Data Exchange (ETDEWEB)

Mavrommatis, K.T. [Rheinisch-Westfaelische Technische Hochschule Aachen, Aachen (Germany)

1996-12-31

Entropy production in real processes is directly associated with the dissipation of energy. Both are potential measures for the proceed of irreversible processes taking place in metallurgical systems. Many of these processes in multi-phase-systems could then be modelled on the basis of the energy-dissipation associated with. As this entity can often be estimated using very simple assumptions from first principles, the evolution of an overall measure of systems behaviour can be studied constructing an energy-dissipation -based model of the system. In this work a formulation of this concept, the Energy-Dissipation-Model (EDM), for metallurgical multi-phase-systems is given. Special examples are studied to illustrate the concept, and benefits as well as the range of validity are shown. This concept might be understood as complement to usual CFD-modelling of complex systems on a more abstract level but reproducing essential attributes of complex metallurgical systems. (author)

Energy-dissipation-model for metallurgical multi-phase-systems

Energy Technology Data Exchange (ETDEWEB)

Mavrommatis, K T [Rheinisch-Westfaelische Technische Hochschule Aachen, Aachen (Germany)

1997-12-31

Entropy production in real processes is directly associated with the dissipation of energy. Both are potential measures for the proceed of irreversible processes taking place in metallurgical systems. Many of these processes in multi-phase-systems could then be modelled on the basis of the energy-dissipation associated with. As this entity can often be estimated using very simple assumptions from first principles, the evolution of an overall measure of systems behaviour can be studied constructing an energy-dissipation -based model of the system. In this work a formulation of this concept, the Energy-Dissipation-Model (EDM), for metallurgical multi-phase-systems is given. Special examples are studied to illustrate the concept, and benefits as well as the range of validity are shown. This concept might be understood as complement to usual CFD-modelling of complex systems on a more abstract level but reproducing essential attributes of complex metallurgical systems. (author)

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Science.gov (United States)

Breneman, W. C.

1978-01-01

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Diagnosis of employee engagement in metallurgical enterprise

Directory of Open Access Journals (Sweden)

B. Gajdzik

2013-01-01

Full Text Available In the theoretical part of the publication an overview of the definitions of employee engagement was conducted together with the analysis of the methods and techniques which influence the professional activity of the employees in the metallurgical enterprise. The practical part discusses the results of diagnosis of engagement in steelworks. Presented theories, as well as the research, fill the information gap concerning the engagement of the employees in metallurgical enterprises. This notion is important due to the fact that modern conditions of human resources management require the engagement of the employees as something commonly accepted and a designation of manufacturing enterprises.

Preparing rare earth-silicon-iron-aluminum alloys

International Nuclear Information System (INIS)

Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

1980-01-01

As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

Surface etching technologies for monocrystalline silicon wafer solar cells

Science.gov (United States)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

A bioactive metallurgical grade porous silicon-polytetrafluoroethylene sheet for guided bone regeneration applications.

Science.gov (United States)

Chadwick, E G; Clarkin, O M; Raghavendra, R; Tanner, D A

2014-01-01

The properties of porous silicon make it a promising material for a host of applications including drug delivery, molecular and cell-based biosensing, and tissue engineering. Porous silicon has previously shown its potential for the controlled release of pharmacological agents and in assisting bone healing. Hydroxyapatite, the principle constituent of bone, allows osteointegration in vivo, due to its chemical and physical similarities to bone. Synthetic hydroxyapatite is currently applied as a surface coating to medical devices and prosthetics, encouraging bone in-growth at their surface and improving osseointegration. This paper examines the potential for the use of an economically produced porous silicon particulate-polytetrafluoroethylene sheet for use as a guided bone regeneration device in periodontal and orthopaedic applications. The particulate sheet is comprised of a series of microparticles in a polytetrafluoroethylene matrix and is shown to produce a stable hydroxyapatite on its surface under simulated physiological conditions. The microstructure of the material is examined both before and after simulated body fluid experiments for a period of 1, 7, 14 and 30 days using Scanning Electron Microscopy. The composition is examined using a combination of Energy Dispersive X-ray Spectroscopy, Thin film X-ray diffraction, Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy and the uptake/release of constituents at the fluid-solid interface is explored using Inductively Coupled Plasma-Optical Emission Spectroscopy. Microstructural and compositional analysis reveals progressive growth of crystalline, 'bone-like' apatite on the surface of the material, indicating the likelihood of close bony apposition in vivo.

Cermet crucible for metallurgical processing

Science.gov (United States)

Boring, Christopher P.

1995-01-01

A cermet crucible for metallurgically processing metals having high melting points comprising a body consisting essentially of a mixture of calcium oxide and erbium metal, the mixture comprising calcium oxide in a range between about 50 and 90% by weight and erbium metal in a range between about 10 and 50% by weight.

Estimation of metallurgical parameters of flotation process from froth visual features

Directory of Open Access Journals (Sweden)

Mohammad Massinaei

2015-06-01

Full Text Available The estimation of metallurgical parameters of flotation process from froth visual features is the ultimate goal of a machine vision based control system. In this study, a batch flotation system was operated under different process conditions and metallurgical parameters and froth image data were determined simultaneously. Algorithms have been developed for measuring textural and physical froth features from the captured images. The correlation between the froth features and metallurgical parameters was successfully modeled, using artificial neural networks. It has been shown that the performance parameters of flotation process can be accurately estimated from the extracted image features, which is of great importance for developing automatic control systems.

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching

Science.gov (United States)

Tian, Chunjin; Lu, Haifei; Wei, Kuixian; Ma, Wenhui; Xie, Keqiang; Wu, Jijun; Lei, Yun; Yang, Bin; Morita, Kazuki

2018-04-01

The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L-1 HCl, 3 mol L-1 HF, and 3 mol L-1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.

Study of a metallurgical site in Tuscany (Italy) by radiocarbon dating

International Nuclear Information System (INIS)

Cartocci, A.; Fedi, M.E.; Taccetti, F.; Benvenuti, M.; Chiarantini, L.; Guideri, S.

2007-01-01

Tuscany represents one of the most important ancient mining districts of Italy. Metalworking activities have been present in the area since ancient times and several mining centres have been active in the region since the Etruscan period. Two of the more notable mining locations are the island of Elba and the towns of Populonia and Massa Marittima. In order to reconstruct the development of metallurgical techniques in the past, a multi-disciplinary approach is required, involving both archaeological study and archaeometric analysis of the sites of interest. One of the most complex problems is establishing the chronological history of metallurgical exploitation in ancient sites: archaeological remains are sometimes incomplete and the stratigraphy of archaeological horizons might have been deeply altered. Thus, direct dating of metallurgical slags and other remains of mining and metalworking activities using radiocarbon measurements is particularly useful for developing site chronologies. Charcoal samples from a recent excavation in Populonia were dated by AMS radiocarbon in order to reconstruct the chronological evolution of ancient metallurgical production; results reported here are consistent with archaeological observations

Study of a metallurgical site in Tuscany (Italy) by radiocarbon dating

Energy Technology Data Exchange (ETDEWEB)

Cartocci, A. [Dipartimento di Fisica dell' Universita e I.N.F.N. Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino, Florence (Italy); Fedi, M.E. [Dipartimento di Fisica dell' Universita e I.N.F.N. Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino, Florence (Italy)]. E-mail: fedi@fi.infn.it; Taccetti, F. [Dipartimento di Fisica dell' Universita e I.N.F.N. Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino, Florence (Italy); Benvenuti, M. [Dipartimento di Scienze della Terra dell' Universita di Firenze, via La Pira 4, 50121 Florence (Italy); Chiarantini, L. [Dipartimento di Scienze della Terra dell' Universita di Firenze, via La Pira 4, 50121 Florence (Italy); Guideri, S. [Societa Parchi Val di Cornia S.p.a., via G. Lerario, Piombino, Livorno (Italy)

2007-06-15

Tuscany represents one of the most important ancient mining districts of Italy. Metalworking activities have been present in the area since ancient times and several mining centres have been active in the region since the Etruscan period. Two of the more notable mining locations are the island of Elba and the towns of Populonia and Massa Marittima. In order to reconstruct the development of metallurgical techniques in the past, a multi-disciplinary approach is required, involving both archaeological study and archaeometric analysis of the sites of interest. One of the most complex problems is establishing the chronological history of metallurgical exploitation in ancient sites: archaeological remains are sometimes incomplete and the stratigraphy of archaeological horizons might have been deeply altered. Thus, direct dating of metallurgical slags and other remains of mining and metalworking activities using radiocarbon measurements is particularly useful for developing site chronologies. Charcoal samples from a recent excavation in Populonia were dated by AMS radiocarbon in order to reconstruct the chronological evolution of ancient metallurgical production; results reported here are consistent with archaeological observations.

EXPERIENCE AND PROSPECTS OF MASTER’S DEGREE TRAINING OF ENGINEERING STAFF IN THE FIELD OF METALLURGICAL SCIENCE

Directory of Open Access Journals (Sweden)

V. M. Konstantinov

2016-01-01

Full Text Available The experience of training for MBA in engineering and technologies for specialties “Materials Science in Mechanical Engineering” at the department was analyzed. Efficiency of the practical-focused Master’s degree program for engineering staff of the machine-building and metallurgical enterprises was emphasized. Some ways to increase efficiency of master training of engineering experts in the field of metallurgical science and heat treatment are offered. Need of more active interaction with engineering services of the production enterprise during implementation of the master thesis was proved. Need of domination of requirements of the production enterprise is highlighted in master preparation program. The algorithm of interaction of department and technical service of the production enterprise during training of the factory expert in the correspondence practical-focused Master’s degree program is offered.

Metallisation Technology of Silicon Solar Cells Using the Convectional and Laser Technique

Directory of Open Access Journals (Sweden)

Leszek A. Dobrzanski

2013-07-01

Full Text Available The aim of the paper was to optimize the Selective Laser Sintering (SLS and co-firing in the infrared conveyor furnace parameters in front Screen Printed (SP contacts. The co-firing in the infrared conveyor furnace was carried out at various temperature. The SLS was carried out at various a laser beam, scanning speed of the laser beam and front electrode thickness. The investigations were carried out on monocrystalline silicon wafers. During investigations was applied a silver powder with the grain size of 40 μm. The contacts parameters are obtained according to the Transmission Line Model (TLM measurements. Firstly, this paper shows the comparison between the convectional an unconventional method of manufacturing front contacts of monocrystalline silicon solar cells with the different morphology of silicon for comparative purposes. Secondly, the papers shows technological recommendations for both methods in relation to parameters such as: the optimal paste composition, the morphology of the silicon substrate to produce the front electrode of silicon solar cells, which were selected experimentally in order to produce a uniformly melted structure, well adhering to the substrate, with the low resistance of the front electrode-to-substrate joint zone.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

The history of decisions on creation of nuclear and metallurgical complex on the basis of the Kola nuclear power plant

Directory of Open Access Journals (Sweden)

Kudrin B. I.

2017-02-01

Full Text Available Some reasons for the choice of directions for using electric and thermal energy of the Kola nuclear power plant located beyond the Arctic Circle have been presented. The regions of the country and their large-scale industrial productions based on metallurgical enterprises have been indicated; the electrical supply of these enterprises is implemented from the Kola NPP. The results of research of energy inputs for the production of a ton of steel and cast iron have been presented. It has been determined that the main direction of technological modernization in the steel industry is avoiding the use of organic fuels (particularly in coke-blast furnace production as the most energy-intensive and its replacement with the technology of direct reduction of iron with hydrogen. As an alternative energy source for organic fuels the creation of a fuel-free nuclear-metallurgical electrified complex has been proposed. The principal scheme of the fuel-free nuclear-metallurgical electrified complex has been described, here the main novelty has a reducing gases preparation block giving the potential ability for creating waste-free process. It has been noted that this technology requires using high temperatures and solving technical problems related to heat resistance of constructions. Some examples of world research on the implementation of similar projects have been presented. It has been determined that the use of new technology will cause the need for optimization of power consumption structure due to the redistribution of capacity and electrical consumption between productions. The introduction of new technologies requires solving a number of problems on electric power supply and electrical equipment designing. It has been observed that on the Kola NPP large-scale reconstruction was carried out during the working period, it helped to increase its project capacity and extend the operation life. Nowadays the region has excess installed capacity that can be

Kinetic Modeling of a Silicon Refining Process in a Moist Hydrogen Atmosphere

Science.gov (United States)

Chen, Zhiyuan; Morita, Kazuki

2018-06-01

We developed a kinetic model that considers both silicon loss and boron removal in a metallurgical grade silicon refining process. This model was based on the hypotheses of reversible reactions. The reaction rate coefficient kept the same form but error of terminal boron concentration could be introduced when relating irreversible reactions. Experimental data from published studies were used to develop a model that fit the existing data. At 1500 °C, our kinetic analysis suggested that refining silicon in a moist hydrogen atmosphere generates several primary volatile species, including SiO, SiH, HBO, and HBO2. Using the experimental data and the kinetic analysis of volatile species, we developed a model that predicts a linear relationship between the reaction rate coefficient k and both the quadratic function of p(H2O) and the square root of p(H2). Moreover, the model predicted the partial pressure values for the predominant volatile species and the prediction was confirmed by the thermodynamic calculations, indicating the reliability of the model. We believe this model provides a foundation for designing a silicon refining process with a fast boron removal rate and low silicon loss.

TMI-2 Vessel Investigation Project Metallurgical Program

International Nuclear Information System (INIS)

Diercks, D.R.; Neimark, L.A.

1990-01-01

The TMI-2 [Three Mile Island unit 2] Vessel Investigation Project Metallurgical Program at Argonne National Laboratory is a part of the international TMI-2 Vessel Investigation Project being conducted jointly by the U.S. Nuclear Regulatory Commission and the Organization for Economic Co-operation and Development (OECD). The overall project consists of three phases, namely (1) recovery of material samples from the lower head of the TMI-2 reactor, (2) examination and analysis of the lower head samples and the preparation and testing of archive material subjected to a similar thermal history, and (3) procurement, examination, and analysis of companion core material located adjacent to or near the lower head material. The specific objectives of the ANL Metallurgical Program, which accounts for a major portion of Phase 2, are to prepare metallographic and mechanical test specimen blanks from the TMI-2 lower head material, prepare similar test specimen blanks from suitable archive material subjected to the appropriate thermal processing, determine the mechanical properties of the lower vessel head and archive materials under the conditions of the core-melt accident, and assess the lower head integrity and margin-to-failure during the accident. The ANL work consists of three tasks: (1) archive materials program, (2) fabrication of metallurgical and mechanical test specimens from the TMI-2 pressure vessel samples, and (3) mechanical property characterization of TMI-2 lower pressure vessel head and archive material

ORNL evaluation of the ORR-PSF metallurgical experiment and blind test

International Nuclear Information System (INIS)

Stallmann, F.W.

1984-01-01

A methodology is described to evaluate the dosimetry and metallurgical data from the two-year ORR-PSF metallurgical irradiation experiment. The first step is to obtain a three-dimensional map of damage exposure parameter values based on neutron transport calculations and dosimetry measurements which are obtained by means of the LSL-M2 adjustment procedure. Metallurgical test data are then combined with damage parameter, temperature, and chemistry information to determine the correlation between radiation and steel embrittlement in reactor pressure vessels including estimates for the uncertainties. Statistical procedures for the evaluation of Charpy data, developed earlier, are used for this investigation. The data obtained in this investigation provide a benchmark against which the predictions of the PSF Blind Test can be compared. The results of this investigation and the Blind Test comparison are discussed

Energy conservation and efficiency in Giprokoks designs at Ukrainian ferrous-metallurgical enterprises

Energy Technology Data Exchange (ETDEWEB)

M.I. Fal' kov [Giprokoks, the State Institute for the Design of Coke-Industry Enterprises, Kharkov (Ukraine)

2009-07-15

Energy conditions at Ukrainian ferrous-metallurgical enterprises are analyzed. Measures to boost energy conservation and energy efficiency are proposed: specifically, the introduction of systems for dry slaking of coke; and steam-gas turbines that employ coke-oven gas or a mixture of gases produced at metallurgical enterprises. Such turbines may be built from Ukrainian components.

Utilisation of metallurgical by-products in road construction in the Czech Republic

Science.gov (United States)

Kresta, František

2017-09-01

Metallurgical by-products, primarily blast furnace slag and steel slag, have ranked among important alternative sources of fill as well as of material for the structural layers in highways. Main hazards of metallurgical by-products are closely connected to their chemical and mineralogical composition and they can be resulted in volume changes. Fears from possible deformations similar to the D47 motorway meant that metallurgical by-products were excluded from several public tenders of road construction. Comparison of blast furnace slag, steel slag and other metallurgical by products parameters allow us to define the most hazardous material as steelworks waste. Linear swelling of steelwork waste achieves more than 40% at 75°C and swelling pressure was higher than 1.5 MPa. Compositional heterogeneity of steelworks waste makes it difficult to establish the long-term behaviour of this material. At the present time we cannot ascertain which maximum values can be reached by deformation and what are the swelling pressures acting on the material while the volume changes are in progress.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

Science.gov (United States)

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Cyril Stanley Smith's Translations of Metallurgical Classics

Indian Academy of Sciences (India)

Home; Journals; Resonance – Journal of Science Education; Volume 11; Issue 6. Cyril Stanley Smith's Translations of Metallurgical Classics. Martha Goodway. General Article Volume 11 Issue 6 June 2006 pp 63-66. Fulltext. Click here to view fulltext PDF. Permanent link:

Metallurgical electrochemistry: the interface between materials science and molten salt chemistry

International Nuclear Information System (INIS)

Sadoway, D.R.

1991-01-01

Even though molten salt electrolysis finds application in the primary extraction of metals (electrowinning), the purification and recycling of metals (electrorefining), and in the formation of metal coatings (electroplating), the technology remains in many respects underexploited. Electrolysis in molten salts as well as other nonaqueous media has enormous potential for materials processing. First, owing to the special attributes of nonaqueous electrolytes electrochemical processing in these media has an important role to play in the generation of advanced materials, i.e., materials with specialized chemistries or tailored microstructures (electrosynthesis). Secondly, as environmental quality standards rise beyond the capabilities of classical metals extraction technologies to comply, molten salt electrolysis may prove to be the only acceptable route from ore to metal. Growing public awareness of pollution from the metals industry could stimulate a renaissance in molten salt electrochemistry. Challenges facing metallurgical electrochemistry as relates to the environment fall into two categories: (1) improving existing electrochemical technology, and (2) developing clean electrochemical technology to displace current nonelectrochemical technology. In both instances success hinges upon the discovery of advanced materials and the ecologically sound extraction of metals, the close coupling between materials science and molten salt chemistry is manifest. (author) 6 refs

Solidification phenomena in nickel base brazes containing boron and silicon

International Nuclear Information System (INIS)

Tung, S.K.; Lim, L.C.; Lai, M.O.

1996-01-01

Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

Proceedings of papers. 3. Balkan Metallurgical Conference; Kniga na trudovi. 3-ta Balkanska konferencija na metalurzite

Energy Technology Data Exchange (ETDEWEB)

Mickovski, Jovan [Faculty of Technology and Metallurgy, St. ' Cyril and Methodius' University, Skopje (Macedonia, The Former Yugoslav Republic of)

2003-07-01

This Conference aims to be a central event in the metallurgy research of Balkan, fulfilling the goals to present the most outstanding relevant developments in modern metallurgy; to inspire high standards of excellence in pure and applied metallurgy research; to attract outstanding scientists to present central lectures on modem metallurgical research, and on the challenges imposed by the needs of society; to inspire the young generation of metallurgists in Balkan and other countries. Following these lines, the 3. Balkan Conference on Metallurgy will provide a unique opportunity for academic and industrial metallurgists from the Balkan countries and wider, to exchange ideas, expertise, and experience on topics related to the theme of the Conference - Balkan Metallurgy in Search for New Ways of Development. The aim of the organizers was to bring together distinguished experts, not only to present their work, but also to discuss the major scientific and technological challenges facing metallurgy in this millennium.The 6 sections of the conference were entitled: Section A: Extractive metallurgy; Section B: Physical metallurgy and materials science - ferrous metals and non ferrous metals; Section C: Management, maintenance control and optimization of metallurgical processes; Section D: New technologies and techniques; Section E: Refractory and powder; Section F: Corrosion and protection of metals. Papers relevant to INIS are indexed separately.

ECOLOGICAL MANAGEMENT IN THE MINING AND METALLURGICAL MARAMURES AREA

Directory of Open Access Journals (Sweden)

Viorel POP

2015-04-01

Full Text Available The paper is part of the interdisciplinary recent concerns of "environmental management", looking to determine the damages caused by pollution, remediation expenditures, and benefits that may arise through the application of remediation techniques and decontamination technologies in the mining and metallurgical Maramureş area. Large areas of land were diverted from their original destination (pastures, arable land, forests being now covered with ponds and dumps of mine or flotation tailings, deposits that are insufficiently protected, and have become sources of pollution to surrounding areas. All Eastern European countries have in common major environmental problems, the most serious being due to mining, metallurgy and chemistry. In the relationship of "economic-ecological" equilibrium, should be considered both economic criteria, as well as ecological ones. Pollution as the deterioration of environment, requires costs for rehabilitation of degraded areas, and for environmental protection, costs for new technologies, non polluting ones. The assessment foundation of environmental damages, is necessary for establishing the priority directions in the allocation of funds for projects to protect and rehabilitate the environment.

Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

International Nuclear Information System (INIS)

Atwood, W.B.

1993-06-01

The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

TMI-2 Vessel Investigation Project (VIP) Metallurgical Program

International Nuclear Information System (INIS)

Diercks, D.R.; Neimark, L.A.

1990-06-01

The TMI-2 Vessel Investigation Project (VIP) Metallurgical Program is a part of the international TMI-2 Vessel Investigation Project being conducting jointly by the US Nuclear Regulatory Commission and the Organization for Economic Co-operation and Development (OECD). The overall project consists of three phases, namely (1) recovery of material samples from the lower head of the TMI-2 reactor, (2) examination and analysis of the lower head samples and the preparation and testing of archive material subjected to a similar thermal history, and (3) procurement, examination, and analysis of companion core material located adjacent to or near the lower head material. The specific objectives of the ANL Metallurgical Program, which comprises a major portion of Phase 2, are to prepare metallographic and mechanical test specimen blanks from the TMI-2 lower head material, prepare similar test specimen blanks from suitable archive material subjected to the appropriate thermal processing, determine the mechanical properties of the lower vessel head and archive materials under the conditions of the core-melt accident, and assess the lower head integrity and margin-to-failure during the accident. The ANL work consists of three tasks: (1) archive materials program, (2) fabrication of metallurgical and mechanical test specimens from the TMI-2 pressure vessel samples, and (3) mechanical property characterization of TMI-2 lower pressure vessel head and archive material

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Release of Si from Silicon, a Ferrosilicon (FeSi) Alloy and a Synthetic Silicate Mineral in Simulated Biological Media

Science.gov (United States)

Herting, Gunilla; Jiang, Tao; Sjöstedt, Carin; Odnevall Wallinder, Inger

2014-01-01

Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG), an alloy (ferrosilicon, FeSi) and a mineral (aluminium silicate, AlSi) has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH)4) in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral) resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media. PMID:25225879

Release of Si from silicon, a ferrosilicon (FeSi alloy and a synthetic silicate mineral in simulated biological media.

Directory of Open Access Journals (Sweden)

Gunilla Herting

Full Text Available Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG, an alloy (ferrosilicon, FeSi and a mineral (aluminium silicate, AlSi has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH4 in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media.

Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

International Nuclear Information System (INIS)

Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

2008-01-01

This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Towards Representative Metallurgical Sampling and Gold Recovery Testwork Programmes

Directory of Open Access Journals (Sweden)

Simon C. Dominy

2018-05-01

Full Text Available When developing a process flowsheet, the risks in achieving positive financial outcomes are minimised by ensuring representative metallurgical samples and high quality testwork. The quality and type of samples used are as important as the testwork itself. The key characteristic required of any set of samples is that they represent a given domain and quantify its variability. There are those who think that stating a sample(s is representative makes it representative without justification. There is a need to consider both (1 in-situ and (2 testwork sub-sample representativity. Early ore/waste characterisation and domain definition are required, so that sampling and testwork protocols can be designed to suit the style of mineralisation in question. The Theory of Sampling (TOS provides an insight into the causes and magnitude of errors that may occur during the sampling of particulate materials (e.g., broken rock and is wholly applicable to metallurgical sampling. Quality assurance/quality control (QAQC is critical throughout all programmes. Metallurgical sampling and testwork should be fully integrated into geometallurgical studies. Traditional metallurgical testwork is critical for plant design and is an inherent part of geometallurgy. In a geometallurgical study, multiple spatially distributed small-scale tests are used as proxies for process parameters. These will be validated against traditional testwork results. This paper focusses on sampling and testwork for gold recovery determination. It aims to provide the reader with the background to move towards the design, implementation and reporting of representative and fit-for-purpose sampling and testwork programmes. While the paper does not intend to provide a definitive commentary, it critically assesses the hard-rock sampling methods used and their optimal collection and preparation. The need for representative sampling and quality testwork to avoid financial and intangible losses is

A comparison of degradation in three amorphous silicon PV module technologies

Energy Technology Data Exchange (ETDEWEB)

Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2010-03-15

Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

Photonic integration and photonics-electronics convergence on silicon platform

CERN Document Server

Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

2015-01-01

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

LWR surveillance dosimetry improvement program: PSF metallurgical blind test results

International Nuclear Information System (INIS)

Kam, F.B.K.; Maerker, R.E.; Stallmann, F.W.

1984-01-01

The metallurgical irradiation experiment at the Oak Ridge Research Reactor Poolside Facility (ORR-PSF) was designed as a benchmark to test the accuracy of radiation embrittlement predictions in the pressure vessel wall of light water reactors on the basis of results from surveillance capsules. The PSF metallurgical Blind Test is concerned with the simulated surveillance capsule (SSC) and the simulated pressure vessel capsule (SPVC). The data from the ORR-PSF benchmark experiment are the basis for comparison with the predictions made by participants of the metallurgical ''Blind Test''. The Blind Test required the participants to predict the embrittlement of the irradiated specimen based only on dosimetry and metallurgical data from the SSC1 capsule. This exercise included both the prediction of damage fluence and the prediction of embrittlement based on the predicted fluence. A variety of prediction methodologies was used by the participants. No glaring biases or other deficiencies were found, but neither were any of the methods clearly superior to the others. Closer analysis shows a rather complex and poorly understood relation between fluence and material damage. Many prediction formulas can give an adequate approximation, but further improvement of the prediction methodology is unlikely at this time given the many unknown factors. Instead, attention should be focused on determining realistic uncertainties for the predicted material changes. The Blind Test comparisons provide some clues for the size of these uncertainties. In particular, higher uncertainties must be assigned to materials whose chemical composition lies outside the data set for which the prediction formula was obtained. 16 references, 14 figures, 5 tables

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

Science.gov (United States)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Bankruptcy risk forecasting for the metallurgical branch in Romania

Directory of Open Access Journals (Sweden)

P. R. Răchişan

2014-07-01

Full Text Available All investment decisions require a thorough analysis of the retrospective evolution of the entities from the concerned area, in order to estimate the long-term evolution perspectives. In this context, the present study analyzes the evolution of the entities from the Romanian metallurgical sector based on the accounting and financial information published for the period 2008 - 2012 and, in fact, it justifies the situation from the perspective of users (managers, investors, auditors and of the economic environment specific to Romania. Starting from this premise we created a regression model particularly useful in forecasting the evolution of the ability to deal with debt for the entities from the Romanian metallurgical sector.

Silicon sensor technologies for ATLAS IBL upgrade

CERN Document Server

Grenier, P; The ATLAS collaboration

2011-01-01

New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

Channeling-based collimators for generation of microbeams produced by silicon micromachining technology

International Nuclear Information System (INIS)

Guidi, V.; Antonini, A.; Milan, E.; Ronzoni, A.; Martinelli, G.; Biryukov, V.M.; Chesnokov, Yu.A.

2006-01-01

The growing interest on micro-beams in recent years and the combined development of channeling technology in high-energy physics have opened the way to new concepts for micro-beams devices. Silicon micromachining technology is here applied to manufacture micro-collimators in inexpensive and feasible ways. Both dry and wet etchings can be employed for the purpose, though the latter technique appears to be cheaper and easier. Two designs for micro-collimator devices have been considered and preliminary samples have been produced accordingly

Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

TMI-2 Vessel Investigation Project (VIP) Metallurgical Program

International Nuclear Information System (INIS)

Diercks, D.R.; Neimark, L.A.

1991-01-01

The Three Mile Island Unite 2 (TMI-2) Vessel Investigation Project Metallurgical Program is a part of the international TMI-2 Vessel Investigation Project being conducted jointly by the U.S. Nuclear Regulatory Commission and the Organization for Economic Cooperation and Development. The objectives of the metallurgical program are to deduce the temperatures of, determine the mechanical properties of, and assess the integrity of the TMI-2 lower head during the loss-of-coolant accident. Fifteen samples have been removed from the lower head and are being examined. In addition, archive material from the lower head of the Midland nuclear reactor has been procured for conducting supplemental metallurgical evaluations and mechanical property determinations. Evaluations of the microstructure and mechanical properties of the as-received archive material have been completed, and a series of heat treatment experiments has been conducted to develop standard microstructures to be compared with those present in the TMI-2 samples. Results have been obtained from examinations of two of the fifteen TMI-2 lower head samples. These results indicate that one of these two samples, which contained cracks in the weld cladding extending ∼3 mm into the underlying base metal, apparently reached temperatures on the order of 1000 to 1100C during the accident. A preliminary examination of the core debris deposited on this sample has been performed. The other sample, from an area away from the region of core relocation, did not exceed 727C during the accident

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

A study on the beta voltaic micro-nuclear battery based on the planar technology silicon detector

International Nuclear Information System (INIS)

Zhang Kai; He Gaokui; Huang Xiaojian; Liu Yang; Meng Xin; Hao Xiaoyong

2011-01-01

It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope. Different sensitive area of silicon detectors are used to cooperate with 63 Ni source to buildup of beta voltaic micro-nuclear batteries. The experimental data show that the larger sensitive area the silicon detector has, the higher open circuit voltage it produces, and the open circuit voltage of single cell has reached an excellent result from 0.15 V to 0.30 V. It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries. (authors)

Metallurgical applications: fractography

International Nuclear Information System (INIS)

Meny, L.

1978-01-01

The principal metallurgical uses of the scanning electron microscope and the microprobe described here employ images obtained on a CRT from an electron signal or X rays. The various electron signals are the back scattered electrons, secondary electrons and absorbed electrons. The differences in the intensity of thee signals with the acceleration tension E 0 , the inclination angle β, the atomic number Z of the target and any potential applied to the sample give rise to contrasts: atomic number contrast, given by the sample current or the back scattered electrons; topographical contrast, given by the emission of the secondary electrons Δ that vary with α (the angle between the normal to the surface and the direction of the incident beam) [fr

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Fuel for domestic and metallurgical uses

Energy Technology Data Exchange (ETDEWEB)

Basu, D.; Chakrabarti, R.K.

1981-02-01

To meet the energy requirements in the domestic and metallurgical sectors CMPDI have taken in hand some developmental projects using coal as a feedback. 4 projects are described - mechanized conversion of coal to domestic coke, formed coke making by Didier-Keihan-Sumitomo process, domestic briquette making based on non-copking coal resources, and smokeless coal blocks utilising inferior grade raw coal and washery by-products.

The development and application of silicon neutron transmutation doping (NTD) technology in china

International Nuclear Information System (INIS)

Qiao Chenyang; Sun Zhiyong; Ke Guotu, Lu Cungang; Shen Feng; Chen Huiqiang

2009-01-01

The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper. The advantages of NTD, compared with conventional technology of doping, are narrated. The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained. The market demand tendency is prospected, and the advanced measures on NTD quality control are described. (authors)

Development of market strategies of metallurgical enterrprises after restructuring of steel industry

Directory of Open Access Journals (Sweden)

B. Gajdzik

2014-01-01

Full Text Available Before metallurgical enterprises started implementation of marketing activities they had to go through restructuring processes which included all areas of their market activities. Privatised metallurgical enterprises after economic transformation gradually implemented marketing to their business activities. The article presents notions connected with development of marketing strategies from the period of last 20 years. The range of analysis includes categories corresponding with instruments of mix marketing (4P − product, price, place, promotion.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

KAUST Repository

Hussain, Aftab M.

2016-12-01

With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

Thin-film silicon solar cell technology

Czech Academy of Sciences Publication Activity Database

Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

2004-01-01

Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

Investigation of metallurgical coatings for automotive applications

Science.gov (United States)

Su, Jun Feng

Metallurgical coatings have been widely used in the automotive industry from component machining, engine daily running to body decoration due to their high hardness, wear resistance, corrosion resistance and low friction coefficient. With high demands in energy saving, weight reduction and limiting environmental impact, the use of new materials such as light Aluminum/magnesium alloys with high strength-weight ratio for engine block and advanced high-strength steel (AHSS) with better performance in crash energy management for die stamping, are increasing. However, challenges are emerging when these new materials are applied such as the wear of the relative soft light alloys and machining tools for hard AHSS. The protective metallurgical coatings are the best option to profit from these new materials' advantages without altering largely in mass production equipments, machinery, tools and human labor. In this dissertation, a plasma electrolytic oxidation (PEO) coating processing on aluminum alloys was introduced in engine cylinder bores to resist wear and corrosion. The tribological behavior of the PEO coatings under boundary and starve lubrication conditions was studied experimentally and numerically for the first time. Experimental results of the PEO coating demonstrated prominent wear resistance and low friction, taking into account the extreme working conditions. The numerical elastohydrodynamic lubrication (EHL) and asperity contact based tribological study also showed a promising approach on designing low friction and high wear resistant PEO coatings. Other than the fabrication of the new coatings, a novel coating evaluation methodology, namely, inclined impact sliding tester was presented in the second part of this dissertation. This methodology has been developed and applied in testing and analyzing physical vapor deposition (PVD)/ chemical vapor deposition (CVD)/PEO coatings. Failure mechanisms of these common metallurgical hard coatings were systematically

Translating silicon nanowire BioFET sensor-technology to embedded point-of-care medical diagnostics

DEFF Research Database (Denmark)

Pfreundt, Andrea; Zulfiqar, Azeem; Patou, François

2013-01-01

Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need to be de......Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need...... to be detected. However, in order to translate this technology from the bench to the bedside, a number of key issues need to be taken into consideration: Integrating nanobiosensors-based technology requires to overcome the difficult tradeoff between imperatives for high device reproducibilty and associated...... rising fabrication costs. Also the translation of nano-scale sensor technology into daily-use point-of-care devices requires acknowledgement of the end-user requirements, making device portability and human-interfacing a focus point in device development. Sample handling or purification for instance...

Silicon microelectronic field-emissive devices for advanced display technology

Science.gov (United States)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Utilization of secondary energy resources of metallurgical ...

African Journals Online (AJOL)

... with a heat output of 4200 kW, a working agent R 600, a source of low-potential heat-circulating water: a 460 kW gas engine. The proposed scheme showed high efficiency of power supply of the town in comparison with the gas boiler. Keywords: heat pump; internal combustion engine metallurgical plant; energy efficiency ...

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Safety performance indicators in the metallurgical industry using WEB programming

Directory of Open Access Journals (Sweden)

M. Cioca

2017-01-01

Full Text Available Sustainable development has a significant impact today in Romania and worldwide. In this context, risk assessment becomes mandatory for enterprises. This paper analyzes the situation of occupational risks in the metallurgical industry in the European Union, Romania, and the United States and highlights the main causes for work accidents in Romanian metallurgical industry. The analysis covers the period 2010 - 2016. The data collected from Romania is compared to the data related to the European Union and the United States. Moreover, the paper aims to present an occupational risk assessment tool, which is customizable for each area of activity. The last section of the paper discusses the research results and limitations.

The impact of production capacity utilization on metallurgical companies financing

Directory of Open Access Journals (Sweden)

J. Kutáč

2013-01-01

Full Text Available The most important and the most problematic in-house sources of financing of metallurgical companies are profit and depreciations. In the event that the aggregate value of the economic result and depreciations goes over to negative values, then this kind of in-house financing ceases to increase Cash Flow of the company but, on the contrary, it will cause its reduction. It means that this type of financing is to some extent uncertain, particularly in times of crisis, when there are noticeable fluctuations in sales volumes, leading to a significant influence of the volume of production on the amount of profit. The article discusses the impact of production capacity utilization on metallurgical companies financing.

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

Science.gov (United States)

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Comparison of Metallurgical and Ultrasonic Inspections of Galvanized Steel Resistance Spot Welds

International Nuclear Information System (INIS)

Potter, Timothy J.; Ghaffari, Bita; Mozurkewich, George; Reverdy, Frederic; Hopkins, Deborah

2006-01-01

Metallurgical examination of galvanized steel resistance spot welds was used to gauge the capabilities of two ultrasonic, non-destructive, scanning techniques. One method utilized the amplitude of the echo from the weld faying surface, while the other used the spectral content of the echo train to map the fused area. The specimens were subsequently sectioned and etched, to distinguish the fused, zinc-brazed, and non-fused areas. The spectral maps better matched the metallurgical maps, while the interface-amplitude method consistently overestimated the weld size

Retail optimization in Romanian metallurgical industry by applying of fuzzy networks concept

Directory of Open Access Journals (Sweden)

Ioana Adrian

2017-01-01

Full Text Available Our article presents possibilities of applying the concept Fuzzy Networks for an efficient metallurgical industry in Romania. We also present and analyze Fuzzy Networks complementary concepts, such as Expert Systems (ES, Enterprise Resource Planning (ERP, Analytics and Intelligent Strategies (SAI. The main results of our article are based on a case study of the possibilities of applying these concepts in metallurgy through Fuzzy Networks. Also, it is presented a case study on the application of the FUZZY concept on the Romanian metallurgical industry.

Application of Six Sigma Using DMAIC Methodology in the Process of Product Quality Control in Metallurgical Operation

Directory of Open Access Journals (Sweden)

Girmanová Lenka

2017-12-01

Full Text Available The Six Sigma DMAIC can be considered a guide for problem solving and product or process improvement. The majority of companies start to implement Six Sigma using the DMAIC methodology. The paper deals with application of Six Sigma using the DMAIC methodology in the process of product quality control. The case study is oriented on the field of metallurgical operations. The goal of the Six Sigma project was to ensure the required metallurgic product quality and to avoid an increase in internal costs associated with poor product quality. In this case study, a variety of tools and techniques like flow chart, histogram, Pareto diagram, analysis of FMEA (Failure Mode and Effect Analysis data, cause and effect diagram, logical analysis was used. The Sigma level has improved by approximately 13%. The achieved improvements have helped to reduce the quantity of defective products and the processing costs (technology for re-adjusting. Benefits resulting from the DMAIC implementation can be divided into three levels: the qualitative, economic and safety level.

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

Modern recycling methods in metallurgical industry

Directory of Open Access Journals (Sweden)

M. Maj

2010-04-01

Full Text Available The contamination of environment caused by increased industrial activities is the main topic of discussions in Poland and in the world. The possibilities of waste recovery and recycling vary in different sectors of the industry, and the specific methods, developed and improved all the time, depend on the type of the waste. In this study, the attention has been focussed mainly on the waste from metallurgical industry and on the available techniques of its recycling

Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

DEFF Research Database (Denmark)

Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

2015-01-01

IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... support and deep reactive-ion etching forms the waveguide bulk with smooth and nearly vertical sidewalls. Aluminum metallization covers the etched sidewalls, fully enclosing the waveguides in metal from all sides. Waveguides are fabricated with a rectangular cross section of 560 μm x 280 μm. The measured...

Inventory management in a metallurgical of the automotive industry

Directory of Open Access Journals (Sweden)

Marcos Antonio Maia de Oliveira

2015-12-01

Full Text Available This article aims to analyze the importance of inventory management in a metallurgical company, located in Santo André city, in Grande São Paulo, since the inventory management is crucial within a company that wants to survive nowadays, by studying the main features and trends in the methods used for inventory control. In this case study the basic concepts for good control were considered, showing tools currently used in the market, providing data for material purchase, sales control, parts in stock, future orders, MRP, storage space, among others once many companies have high and unnecessary cost of stock for not being aware of the real importance of this control. It is felt that the logistics of the company should invest in technology by purchasing the MRP system, visiting fairs and attending seminars. This way, the company will have better inventory control thus consequently decrease the purchase of materials.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Conceptual design for treatment of mining and metallurgical wastewaters which contains arsenic and antimony

Directory of Open Access Journals (Sweden)

Željko Kamberović

2012-12-01

Full Text Available This paper presents a preliminary design for treatment of mining and metallurgical wastewaters (MMW from the basin of antimony “Zajača“, which contains high concentrations of arsenic and antimony. MMW have been investigated in laboratory, due to large difference in concentrations of pollutants. Metallurgical wastewaters were treated using iron (II-sulfate and lime milk used to adjust the pH value at 7. After chemical treatment of metallurgical wastewater and its joining with mining wastewater, residual amount of arsenic in water was below maximum allowed concentrations, while the concentration of antimony, remained above the maximum allowed value. The final phase of purification process was performed using ion exchange resin. After treatment of MMW, they can be used as technical water in the smelting process of secondary raw lead materials.

Microwave-assisted grinding of metallurgical coke; Molienda asistida con microondas de un coque metalurgico

Energy Technology Data Exchange (ETDEWEB)

Ruisanchez, E.; Juarez-Perez, E. J.; Arenillas, A.; Bermudez, J. M.; Menendez, J. A.

2014-10-01

Metallurgical cokes are composed of graphitic carbon (s2p2) and different inorganic compounds with very different capacities to absorb microwave radiation. Moreover, due to the electric conductivity shown by the metallurgical cokes, microwave radiation produces electric arcs or microplasmas, which gives rise to hot spots. Therefore, when these cokes are irradiated with microwaves some parts of the particle experiment a rapid heating, while some others do not heat at all. As a result of the different expansion and stress caused by thermal the shock, small cracks and micro-fissures are produced in the particle. The weakening of the coke particles, and therefore an improvement of its grind ability, is produced. This paper studies the microwave-assisted grinding of metallurgical coke and evaluates the grinding improvement and energy saving. (Author)

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Autonomous and professional maintenance in metallurgical enterprise as activities within total productive maintenance

Directory of Open Access Journals (Sweden)

B. Gajdzik

2014-04-01

Full Text Available The content of this publication consists of notions connected with Total Productive Maintenance (TPM in metallurgical enterprise. The basic areas of devices condition management through Autonomous and Professional Maintenance are described here. Mentioned areas of activities are performed in metallurgical enterprise ArcelorMittal Poland within pillars of World Class Manufacturing (WCM. The aims of UR programs are to maintain the basic functionality of the devices and decrease the number of failures in order to reach improvement of production efficiency.

Mining-metallurgical projects for the production of uranium concentrates

International Nuclear Information System (INIS)

Ajuria-Garza, S.

1983-01-01

This report presents an overall view of a complete project for a mining-metallurgical complex for the production of uranium concentrates. Relevant aspects of each important topic are discussed as parts of an integrated methodology. The principal project activities are analyzed and the relationships among the various factors affecting the design are indicated. A list of 96 principal activities is proposed as an example. These activities are distributed in eight groups: initial evaluations preliminary feasibility studies, project engineering, construction, industrial operation, decommissioning and post-decommissioning activities. The environmental impact and the radiological risks due to the construction and operation of the mining metallurgical complex are analyzed. The principles of radiological protection and the regulations, standards and recommendations for radiological protection in uranium mines and mills are discussed. This report is also a guide to the specialized literature: a bibliography with 765 references is included. (author)

Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

Energy Technology Data Exchange (ETDEWEB)

Rentsch, J.

2005-04-15

Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

Control and metallurgical examination on safety injection piping

International Nuclear Information System (INIS)

Thebault, Y.; Grandjean, Y.; Gauthier, V.; Lambert, B.; Debustcher, B.

1998-01-01

From 1992 until 1997, cracking phenomena by thermal fatigue regarding safety injection piping were evidenced on several PWR 900 MW reactors. These events led EDF to the implementation of a first maintenance programme. In December 1996, a new leak occurred on an EDF 900 MW PWR in operation and was located on a safety injection pipe. In site inspections and metallurgical examinations carried out in the EDF hot Laboratory evidenced defects inside the pipe, out of the welding areas. These degradations are the consequence of a fatigue cracking phenomenon with thermal cycling linked to permanent tensile stresses. Following this incident, a programme of non destructive testing was implemented on all the EDF 900 MW plants. These inspections exhibited the same defects on other PWR 900 MW units. The results of the metallurgical examinations and also in site inspection results allowed EDF to understand the phenomenon and to validate an inspection programme on the one hand and a modification of the design of the circuits on the other hand. (authors)

Efficiency of Polish metallurgical industry based on data envelopment analysis

Directory of Open Access Journals (Sweden)

J. Baran

2016-04-01

Full Text Available The main purpose of this paper is to compare the technical efficiency of 12 sectors manufacturing basic metals and metal products in Poland. This article presents the use of Data Envelopment Analysis models, to determine overall technical efficiency, pure technical efficiency and scale efficiency of metallurgical branches in Poland. The average technical efficiency of metallurgical industry in Poland was quite high. The analysis gives a possibility to create a ranking of sectors. Three branches were found to be fully efficient: manufacture of basic iron and steel and of ferroalloys, manufacture of basic precious and other non - ferrous metals and manufacture of tubes, pipes, hollow profiles and related fittings, of steel. The results point out the reasons of the inefficiency and provide improving directions for the inefficient sectors.

Silicon photonics at the University of Surrey

Science.gov (United States)

Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

2009-05-01

Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

Economic statistics for the extractive and metallurgical industries for 1974/1975

Energy Technology Data Exchange (ETDEWEB)

Medaets, J

1977-11-01

Statistical data are presented for the extractive industries (coal, ore, quarries etc); coke and agglomerates manufacture; metallurgical industries; and the related hydrology. (In French and in Dutch)

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200

Texture evolution of experimental silicon steel grades. Part I: Hot rolling

Energy Technology Data Exchange (ETDEWEB)

Sandoval Robles, J.A., E-mail: jsandoval.uanl@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Ave. Universidad S/N, Cd. Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450 (Mexico); Salas Zamarripa, A.; Guerrero Mata, M.P. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Ave. Universidad S/N, Cd. Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450 (Mexico); Cabrera, J. [Universitat Politècnica de Catalunya, Departament de Ciència dels Materials I Enginyeria Metal-lúrgica, Av. Diagonal 647, Barcelona 08028 (Spain)

2017-05-01

The metallurgical understanding of the deformation processes during the fabrication of non-oriented electrical steels plays a key role in improving their final properties. Texture control and optimization is critical in these steels for the enhancement of their magnetic properties. The aim of the present work is to study the texture evolution of six non-oriented experimental silicon steel grades during hot rolling. These steels were low carbon steel with a silicon content from 0.5 to 3.0 wt%. The first rolling schedule was performed in the austenitic (γ-Fe) region for the steel with a 0.5 wt% of silicon content, while the 1.0 wt% silicon steel was rolled in the two-phase (α+γ) region. Steels with higher silicon content were rolled in the ferritic (α-Fe) region. The second rolling schedule was performed in the α-Fe region. Samples of each stage were analyzed by means of Electron Backscatter Diffraction (EBSD). Findings showed that the texture was random and heterogeneous in all samples after 60% of rolling reduction, which is due to the low deformation applied during rolling. After the second rolling program, localized deformation and substructured grains near to surface were observed in all samples. The Goss {110}<001>texture-component was found in the 0.5 and 1.0 wt.-%silicon steels. This is due to the thermomechanical conditions and the corresponding hot band microstructure obtained after the first program. Moreover, the α<110>//RD and the γ <111>//ND fiber components of the texture presented a considerable increment as the silicon content increases. Future research to be published soon will be related to the texture evolution during the cold-work rolling process. - Highlights: • We analyze six silicon steel experimental grades alloys trough the rolling process. • Material was subjected to a hot deformation process in the α-γ region. • No recrystalization was observed during-after the rolling schedules. • Rise of the magnetic texture components

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

CERN Document Server

Kissinger, Dietmar

2012-01-01

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

International Nuclear Information System (INIS)

Feld, L.; Karpinski, W.; Klein, K.

2016-04-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Feld, L.; Karpinski, W.; Klein, K. [RWTH Aachen Univ. (Germany). 1. Physikalisches Institut B; Collaboration: The PETTL Collaboration; and others

2016-04-15

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Post-failure metallurgical investigation of KNK steam generator tube damage

Energy Technology Data Exchange (ETDEWEB)

Lorenz, H; Herberg, G

1975-07-01

In September 1973 the sodium-cooled reactor KNK was shut down due to a steam generator tube damage. Failure location and results of the metallurgical examination of the damage are described. The cause of the damage is discussed. (author)

Silicon ribbon technology assessment 1978-1986 - A computer-assisted analysis using PECAN

Science.gov (United States)

Kran, A.

1978-01-01

The paper presents a 1978-1986 economic outlook for silicon ribbon technology based on the capillary action shaping technique. The outlook is presented within the framework of two sets of scenarios, which develop strategy for approaching the 1986 national energy capacity cost objective of $0.50/WE peak. The PECAN (Photovoltaic Energy Conversion Analysis) simulation technique is used to develop a 1986 sheet material price ($50/sq m) which apparently can be attained without further scientific breakthrough.

Silicon carbide microsystems for harsh environments

CERN Document Server

Wijesundara, Muthu B J

2011-01-01

Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

Neutron transmutation doping technology of silicon and overview of trial irradiations at Cirus reactor

International Nuclear Information System (INIS)

Singh, Tej; Bhatnagar, Anil; Singh, Kanchhi; Raina, V.K.

2007-12-01

Neutron transmutation doped silicon (NTD-Si) has been used extensively in manufacturing of high power semiconductor devices. The quality of NTD-Si, both from view points of dopant concentration and homogeneity has been found superior to the quality of doped silicon produced by conventional methods. The technology of NTD-Si has been perfected to achieve more accurate resistivity and homogenous resistivity with complete elimination of hot spots. In addition, the greater spatial uniformity, as well as the precise control over the resistivity achievable by using the NTD process, has led to a substantial increase in the breakdown voltage capability of thyristors. The report describes the fundamentals of NTD-Si production and discusses various techniques used for control of dopant concentration and homogeneity. Various aspects like radiation damage, residual radio-activity, nuclear heating, surface contamination and annealing requirements of the silicon ingots after irradiation have also been discussed. Details of trail irradiation and characterization of NTD-Si samples have been provided. Future plans for production of NTD-Si in Cirus and Dhruva reactors have also been discussed. (author)

IFM – SCIENTIFIC CENTRE OF THE DEVELOPMENT OF THE UKRAINIAN METALLURGICAL INDUSTRY

Directory of Open Access Journals (Sweden)

BOLSHAKOV V. I.

2017-01-01

Full Text Available The history of creation and development of the Institute of ferrous metallurgy of the Ukrainian Academy of Sciences named after Z. I. Nekrasov is regarded in the article. IFM has become the scientific centre of the development of the metallurgical industry of Ukraine. Researches of the outstanding scientists show their significant contribution in the development of the metallurgical science and implementation of their achievements in the production of the metallurgical industry of Ukraine. Analysis of publications. History of the Institute of the ferrous metallurgy is regarded in the fundamental works devoted to the development of the metallurgical industry in Ukraine and in the works published to the jubilee dates of the prominent scientists academicians Z. I. Nekrasov, V. I. Bol’shakov and others. The purpose of the article is to analyze the process of the creation of the Institute and the stages of its development in the 20th and 21st centuries and to define the influence of the economic and political situation in the country upon this process? To regard the role of the outstanding scientists and influence of their achievements on the development of the metallurgical industry of Ukraine. The history of IFM began in 1939 when it was organized in Kharkiv as a part of the Academy of Sciences of Ukraine. At the beginning of the Great Patriotic war the Institute was moved to Ufa – the capital of Bashkiria. During the war the scientists of the Institute tried to increase the output of metal and special steels for the defence industry. In 1943 the Institute moved to Moscow and then to Kiev. In 1952 it was decided to move the Institute to Dnepropetrovsk. In order to combine the scientific researches and production of metal. Z. I. Nekrasov was elected Director of the Institute. The departments of the Indtitute were headed by academicians Z. I. Nekrasov, A. P. Chekmariov, K. F. Starodubov, Correspondence Members of the Ukrainian Academy of Sciences

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

Science.gov (United States)

Wu, Junjie; Lei, Lihua; Chen, Xin; Cai, Xiaoyu; Li, Yuan; Han, Tao

2014-01-01

For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction. PMID:25360581

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

Directory of Open Access Journals (Sweden)

Junjie Wu

2014-10-01

Full Text Available For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction.

Metallurgical and reactor physics aspects of using low enrichment fuel in Safari-I

International Nuclear Information System (INIS)

1978-09-01

The feasibility of using lower than 93% enriched fuel in the SAFARI-I research and materials testing reactor is reviewed. Metallurgical experiments show that, using standard U-Al alloy technology and keeping the 235 U loading per element constant without altering the fuel plate thickness, a maximum of 35 weight percent of uranium in the meat can be achieved. This corresponds to using a minimum enrichment of 40% 235 U in order to retain the same mass of 235 U in the core. Even then a loss of approximately 3,3% in reactivity is calculated, which is more than the 2,8% sup(deltak)/k which is normally allowed for burnup. Using current U-Al alloy fuel technology, and an enrichment of approximately 45% 235 U, no changes in core configuration or coolant requirements will be necessary. The use of 20% enriched uranium will require the development of a new fuel design and technology if drastic redesign and modification of the reactor and coolant circuits is to be avoided. Without such new technology, the redesign and modification of the reactor will cost upwards of 3 million dollars and take up to 5 years to complete, requiring a complete shutdown of the reactor for approximately 2 years

Qualifications versus useful knowledge in metallurgical enterprise

Directory of Open Access Journals (Sweden)

B. Gajdzik

2014-01-01

Full Text Available The article presents notions connected with resource structure of useful knowledge packages in metallurgical enterprise. Dependence between building competence of employees and using knowledge for the need of better efficiency of the enterprise was discussed here. ArcelorMittal Poland enterprise served as case study here due to the fact that it strives at World Class Management by putting emphasis on bringing areas of business activity to perfection through participation and involvement of employees.

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

Science.gov (United States)

Shen, Wen-Wei; Chen, Kuan-Neng

2017-12-01

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

Application of the VAW tube digester for metallurgical pressure-leaching processes

International Nuclear Information System (INIS)

Kaempf, F.; Pietsch, H.B.

1978-01-01

Problems associated with the treatment of complex and refractory ores or concentrates, as well as those related to environmental factors, have led to increased interest in hydrometallurgy under elevated temperatures and pressures. Pressure leaching can be carried out in vertical, horizontal or spherical autoclaves equipped with mechanical agitators. If high throughput capacities are catered for, the division of a conventional plant into several units is inevitable. By contrast, the VAW (Vereinigte Aluminium-Werke Aktiengesellschaft) tube digester enables hydrometallurgical processes to be carried out under pressure and at a high temperature with the use of a basically simple technology, extremely high specific throughput and improved thermal economics being achieved. The advantages of the tube digester over vessel autoclaves are described, and details of laboratory investigations into the applicability of tube digesters to various metallurgical applications are given. Test results are given for the leaching of refractory uranium ores. (author)

Effects of mechanical activation on the carbothermal reduction of chromite with metallurgical coke

Directory of Open Access Journals (Sweden)

Kenan Yıldız

2010-06-01

Full Text Available The carbothermal reduction of mechanically activated chromite with metallurgical coke under an argon atmosphere was investigated at temperatures between 1100 and 1400°C and the effects of the mechanical activation on chromite structure were analyzed by x-ray diffraction (XRD and scanning electron microscopy (SEM. An increase in specific surface area resulted in more contact points. The activation procedure led to amorphization and structural disordering in chromite and accelerated the degree of reduction and metalization in the mixture of chromite and metallurgical coke. Carbothermal reduction products were analzed by using scanning electron microscopy (SEM/EDS.

Radioactivity of raw materials, metallurgical and casting products

International Nuclear Information System (INIS)

Hons, J.

2000-01-01

At present, the radioactive contamination of metallurgical products and initial materials represent a potential obstacle in foreign and domestic trade. It is of course an undesirable threat o the living environment on the one side and, at the same time, a new incorrectly used means for suppressing competition and forming a protection 'umbrella' of the national market to desirable imports on the other hand

Radiation protection aspects in the metallurgical examination of irradiated fuel elements

International Nuclear Information System (INIS)

Janardhanan, S.; Pillai, P.M.B.; Jacob, John; Kutty, K.N.; Wattamwar, S.B.; Mehta, S.K.

1981-01-01

The operational safety requirements of hot cell facilities for metallurgical examination of irradiated natural and enriched uranium fuel elements are highlighted. The cell shielding is designed for handling activities equivalent of 10 2 to 10 5 curies of gamma energy of 1.3 Mev. A brief outline of the built-in design features relevant to safety assessment is also incorporated. Reference is made to some salient features of Radiometallurgy Cells at Trombay. Metallurgical operations include investigations on cladding failure of irradiated material structure and specimen preparation from hot fuel element. The radiation protection aspects presented in this paper show that handling low irradiated fuel elements in these beta-gamma cells do not cause serious operational safety problems. The procedures followed and the containment provided would adequately restrict exposure of operational staff to acceptable limits. (author)

Numerical modelling of surface waves generated by low frequency electromagnetic field for silicon refinement process

Science.gov (United States)

Geža, V.; Venčels, J.; Zāģeris, Ģ.; Pavlovs, S.

2018-05-01

One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus, therefore, approach under development will address this problem. An approach of creating surface waves on silicon melt’s surface is proposed in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which include coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

Methodological Approaches to Ensuring Innovative Development of Metallurgical Enterprises on the Basis of Principles of Economic Nationalism

Directory of Open Access Journals (Sweden)

Denysov Kostyantyn V.

2017-01-01

Full Text Available The economic, energy and environmental aspects of the activities of metallurgical enterprises are analyzed in the context of the need to ensure their sustainable development. The high energy intensity of the production process, the low efficiency and irrational structure of capital expenditures for environmental protection, the dominance of material costs in the final cost of finished products at the expense of labor and social contributions are indicated. There proved the low effectiveness of the previous measures of the industrial policy of the metallurgical industry innovative development that were not in compliance with the requirements of the WTO and led to taking compensatory measures against the Ukrainian steel on world markets. The potential of economic nationalism as a system for ensuring the innovative development of the metallurgical industry is considered. There determined the priorities of the industrial policy for the development of metallurgical enterprises based on the principles of economic nationalism and taking into account the global trends in the development of trade and economic relations and Ukraine’s commitments to the WTO.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Achievement report for fiscal 1997 on development of practical application technology for photovoltaic power generation systems. Development of technologies to manufacture thin film solar cells (development of technologies to manufacture silicon crystal based high-quality materials and substrates / survey and research on analysis of practical application); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu / silicon kesshokei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu))

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

As a plan to develop technologies to manufacture materials and substrates for thin film solar cells, it is intended to reduce defect density, enhance film forming speed, largely improve the photo-electric conversion efficiency and increase manufacturing productivity. These goals will be realized by establishing methods to control defect density, crystal particle diameters and crystallization rate in silicon crystal systems. A technology to form micro-crystal silicon-based thin films will be developed, that have superior photo-stability, and are capable of realizing low cost and mass production. Discussions will be given on a high-density plasma control technology, a fundamental property evaluation technology for micro crystal silicon thin films, and a device design simulation technology. A technology will be developed to form amorphous silicon layer on a stainless steel substrate by using the plasma CVD process. At the same time, discussions will be given on optical annealing and thermal annealing as reformation methods. Fiscal 1997 has surveyed component technologies to identify and analyze quickly and accurately the technical trends inside and outside the country, and to mass produce thin film solar cells. The Material and Substrate System Technology Subcommittee (silicon crystals) was held to deliberate the four-year development program and its progress. (NEDO)

The R85m President Brand joint metallurgical complex

International Nuclear Information System (INIS)

Payne, Adam.

1977-01-01

The uranium plant at President Brand, which was built in 1971 and opened last year, is now being extended. The plant forms only part of the extensive joint metallurgical complex being developed by Anglo American Corp. in the Free State, costing a total R85million. This article examines technical details of the recovery processes involved

Crossing the Resolution Limit in Near-Infrared Imaging of Silicon Chips: Targeting 10-nm Node Technology

Directory of Open Access Journals (Sweden)

Krishna Agarwal

2015-05-01

Full Text Available The best reported resolution in optical failure analysis of silicon chips is 120-nm half pitch demonstrated by Semicaps Private Limited, whereas the current and future industry requirement for 10-nm node technology is 100-nm half pitch. We show the first experimental evidence for resolution of features with 100-nm half pitch buried in silicon (λ/10.6, thus fulfilling the industry requirement. These results are obtained using near-infrared reflection-mode imaging using a solid immersion lens. The key novel feature of our approach is the choice of an appropriately sized collection pinhole. Although it is usually understood that, in general, resolution is improved by using the smallest pinhole consistent with an adequate signal level, it is found that in practice for silicon chips there is an optimum pinhole size, determined by the generation of induced currents in the sample. In failure analysis of silicon chips, nondestructive imaging is important to avoid disturbing the functionality of integrated circuits. High-resolution imaging techniques like SEM or TEM require the transistors to be exposed destructively. Optical microscopy techniques may be used, but silicon is opaque in the visible spectrum, mandating the use of near-infrared light and thus poor resolution in conventional optical microscopy. We expect our result to change the way semiconductor failure analysis is performed.

Laser wafering for silicon solar

International Nuclear Information System (INIS)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-01-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Laser wafering for silicon solar.

Energy Technology Data Exchange (ETDEWEB)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Restoration in a mining and metallurgical industries area as a model project. Subproject 1: Factory for amalgamation Halsbruecke. Final report; Modellhafte Sanierung in einer Region mit Bergbau- und Huettenindustrie. Teilvorhaben 1: Amalgamierwerk Halsbruecke, Land Sachsen. Schlussbericht

Energy Technology Data Exchange (ETDEWEB)

Cichos, C.; Menzer, V.; Schaal, A.

1993-06-01

Technology development for the restoration of a metallurgical site contaminated by heavy metals (Pb, Zn, Cu, Hg, As) with the aims of far-reaching recycling as well as minimizing of residues and demonstration of this technology contains in a first step - detailed historical exploration; - chemical, physical and mineralogical materials analysis; - bench scale investigations for process engineering. Starting from historical appraisal and geogene/anthropogene conditions the methods of material characterization bring statements on processing of noxious materials (metallurgical), harmless dumping abilities (immobilization, stabilization) and technological process stages (particularly wet mechanical processes). The same methodology is useful for analogous mining, metallurgical and used material sites with contamination by heavy metals and consisting of heterogeneous materials. (orig.) [Deutsch] Die modellhafte Technologieentwicklung und die Demonstration dieser Technologie zur Sanierung eines durch Schwermetalle (Pb, Zn, Cu, Cd, Hg, As) komplex belasteten Huettenstandortes unter dem Aspekt einer weitgehenden Reststoffverwertung sowie Minimierung der zu entsorgenden Rueckstaende umfasst in der ersten Phase - eine detaillierte historische Analyse/Erkundung; - eine chemische, physikalische und mineralogische Stoffcharakterisierung; verfahrenstechnische Untersuchungen im Labormassstab. Ausgehend von der historischen Bewertung und der geogenen/anthropogenen Verhaeltnisse fuehren die Methoden der Stoffcharakterisierung zu Aussagen der Schadstoffweiterverarbeitung (metallurgisch) sowie der gefahrlosen Deponierung (Immobilisierung, Stabilisierung) und zu technologischen Verfahrensschritten (bes. nassmechanische Verfahren). Die Herangehensweise ist fuer analoge Bergbau- aber besonders Huettenstandorte ggf. auch fuer andere Altlastenstandorte mit komplexer Schwermetallkontamination und heterogenem Material relevant. (orig.)

Contacting graphene in a 200 mm wafer silicon technology environment

Science.gov (United States)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Formation and photoluminescence of "Cauliflower" silicon nanoparticles

NARCIS (Netherlands)

Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

2015-01-01

The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

Radiation protection aspects in the metallurgical examination of irradiated fuel elements

Energy Technology Data Exchange (ETDEWEB)

Janardhanan, S.; Pillai, P.M.B.; Jacob, J.; Kutty, K.N.; Wattamwar, S.B.; Mehta, S.K. (Bhabha Atomic Research Centre, Bombay (India). Health Physics Div.)

The operational safety requirements of hot cell facilities for metallurgical examination of irradiated natural and enriched uranium fuel elements are highlighted. The cell shielding is designed for handling activities equivalent of 10/sup 2/ to 10/sup 5/ curies of gamma energy of 1.3 Mev. A brief outline of the built-in design features relevant to safety assessment is also incorporated. Reference is made to some salient features of Radiometallurgy Cells at Trombay. Metallurgical operations include investigations on cladding failure of irradiated material structure and specimen preparation from hot fuel element. The radiation protection aspects presented in this paper show that handling low irradiated fuel elements in these beta-gamma cells do not cause serious operational safety problems. The procedures followed and the containment provided would adequately restrict exposure of operational staff to acceptable limits.

Arsenic precipitation from metallurgical effluents

International Nuclear Information System (INIS)

Navarro, P.; Vargas, C.; Araya, E.; Martin, I.; Alguacil, F. J.

2004-01-01

In the mining-metallurgical companies different liquid effluents are produced, which can contain a series of dissolved elements that are considered dangerous from an environmental point of view. One of these elements is the arsenic, especially in the state of oxidation +5 that can be precipitated as calcium or iron arsenate. To fulfil the environmental requests it should have in solution a content of arsenic lower than 0,5 mg/l and the obtained solid product should be very stable under the condition in which it will be stored. this work looks for the best conditions of arsenic precipitation, until achieving contents in solution lower than such mentioned concentration. Also, the stability of the precipitates was studied. (Author) 7 refs

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Remelting of metallurgical fines using thermal plasma

International Nuclear Information System (INIS)

Vicente, L.C.; Neto F, J.B.F.; Bender, O.W.; Collares, M.P.

1992-01-01

A plasma furnace was developed for remelting of ferro alloys and silicon fines. The furnace capacity was about 4 Kg of silicon and power about 50 kW. The fine (20 to 100 mesh) was fed into the furnace directly at the high temperature zone. This system was tested for remelting silicon fines and the results in the recovery of silicon was about 95% and it took place a refine of aluminium and calcium. (author)

Thermo-ecological cost (TEC evaluation of metallurgical processes

Directory of Open Access Journals (Sweden)

W. Stanek

2015-01-01

Full Text Available Metallurgy represents a complex production system of fuel and mineral non-renewable resources transformation. The effectiveness of resource management in metallurgical chains depends on the applied ore grade and on the irreversibility of components of the system. TEC can be applied to measure the influence of metallurgy on the depletion of natural resources. The paper discusses the possibility of application of TEC in metallurgy and presents illustrative example concerning blast-furnace process.

Control of innovation activity in a competitive metallurgical business

Science.gov (United States)

Bogdanov, S. V.

2010-12-01

Certain competitive advantages of a manufacturer on a goods market can be provided if one creates conditions for bifurcation development of an innovation process in metallurgical business under conditions of market uncertainty of a demand for goods of a specified consumer quality and determines the technical-and-economic versions of stable operation of a production system for performing orders of metal product consumers.

From silicon to organic nanoparticle memory devices.

Science.gov (United States)

Tsoukalas, D

2009-10-28

After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Surface Passivation for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Deligiannis, D.

2017-01-01

Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

Key Success Factors and Future Perspective of Silicon-Based Solar Cells

Directory of Open Access Journals (Sweden)

S. Binetti

2013-01-01

Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Fiscal 1992 R and D project for next generation infrastructure technology. Report on results of R and D on silicon-based polymeric material; 1992 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1993-03-01

R and D was conducted with the purpose of establishing fundamental technologies for molecular design, synthesis, material formation and evaluation method concerning silicon-based polymer. with the fiscal 1992 results summarized. In the studies on synthesis technology of electrically conductive silicon-based polymeric materials, silicon-based compounds were synthesized including in particular -Si-Si- bond and carbon multiple bond like -C-C-, with acquisition/analysis of material data started. In the studies on new silicon-based polymeric materials capable of circuit plotting, syntheses were performed for network polysilanes through the disproportionation reaction of alkoxydisilanes. In the studies on new silicon-based polymeric materials having a light emitting function, evaluation of oxidation-reduction potential and search for synthesizing conditions were performed for halosilanes and hydrosilanes. In the studies on silicon-based photoelectric conversion materials, molecular design progressed using a crystal orbital method. Furthermore, researches were implemented on such subjects as silicon-based polymeric materials having a sea-island structure, interpenetrating polymer network forming technologies, and composite structural materials composed of organic metallic complex and silicon-based polymers. (NEDO)

Cost estimation and management over the life cycle of metallurgical ...

African Journals Online (AJOL)

This study investigates whether all expected costs over the life cycle of metallurgical research projects are included in initial, normal and fi nal cost estimates, and whether these costs are managed throughout a project's life cycle since there is not enough emphasis on the accurate estimation of costs and their management ...

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon solar cell technology state of the art and a proposed double sided cell

International Nuclear Information System (INIS)

Seddik, M.M.

1987-08-01

A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

Highlights of the metallurgical behaviour of CANDU pressure tubes

International Nuclear Information System (INIS)

Price, E.G.

1984-10-01

This paper is an overview of the service induced metallurgical changes that take place in Zircaloy-2 and Zr-2.5 wt. percent Nb pressure tubes in CANDU reactors. It incorporates the findings of an evaluation program, that followed a significant pressure tube failure at Ontario Hydro's Pickering Nuclear Generating Station, and also provides valid reasons for continued confidence in the current CANDU design

Simulation model for planning metallurgical treatment of large-size billets

International Nuclear Information System (INIS)

Timofeev, M.A.; Echeistova, L.A.; Kuznetsov, V.G.; Semakin, S.V.; Krivonogov, A.B.

1989-01-01

The computerized simulation system ''Ritm'' for planning metallurgical treatment of billets is developed. Three principles, specifying the organization structure of the treatment cycle are formulated as follows: a cycling principle, a priority principle and a principle of group treatment. The ''Ritm'' software consists of three independent operating systems: preparation of source data, simulation, data output

LWR surveillance dosimetry improvement program: PSF metallurgical blind test results

International Nuclear Information System (INIS)

Kam, F.B.K.; Stallmann, F.W.; Guthrie, G.; McElroy, W.N.

1985-01-01

The ORR-PSF benchmark experiment was designed to simulate the surveillance capsule-pressure vessel configuration in power reactors and to test the validity of procedures which determine the radiation damage in the vessel from test results in the surveillance capsule. The PSF metallurgical blind test was initiated to give participants an opportunity to test their current embrittlement prediction methodologies. Experimental results were withheld from the participants except for the type of information which is normally contained in surveillance reports. Preliminary analysis of the PSF metallurgical blind test results shows that: (1) current prediction methodologies, as used by the PSF Blind Test participants, are adequate, falling within +- 20 0 C of the measured values for Δ NDT. None of the different methods is clearly superior; (2) the proposed revision of Reg. Guide 1.99 (Rev. 2) gives a better representation of the fluence and chemistry dependency of Δ NDT than the current version (Rev. 1); and (3) fluence rate effects can be seen but not quantified. Fluence spectral effects are too small to be detectable in this experiment. (orig.)

Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

1994-12-01

Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

The status of silicon ribbon growth technology for high-efficiency silicon solar cells

Science.gov (United States)

Ciszek, T. F.

1985-01-01

More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Continuous moisture measurement in metallurgical coke with automatic charge correction

International Nuclear Information System (INIS)

Watzke, H.; Mehlhose, D.

1981-01-01

A process control system has been developed for automatic batching of the coke amount necessary for metallurgical processes taking into account the moisture content. The measurement is performed with a neutron moisture gage consisting of an Am-Be neutron source and a BF 3 counter. The output information of the counter is used for computer-controlled batching

Production capacity of metallurgical enterprises in modular structure of management accounting

Directory of Open Access Journals (Sweden)

Zambrzhitskaia E.S.

2017-01-01

Full Text Available This article is the result of constant research in development of management accounting at modern Russian metallurgical works. The required steps of renovation are presented for the modernization of management accounting system in the case of production capacity. The necessary factors with defined values are systematized for modern enterprises. The main ones are those which are regulate the measure of the payload of production capacity. For the purposes of effective management accounting at metallurgical enterprises it is suggested to use the system of controlling parameters which were formulated for the enterprise for production of rolls. Later in the article the necessary changes to the modular structure of management accounting business are described and expanded with new structural element – “Management of production capacity”. The suggested methodical approach will allow the company management to respond quickly to rapidly changing external environment and, as a consequence, to make effective management decisions.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

An overview of crystalline silicon solar cell technology: Past, present, and future

Science.gov (United States)

Sopian, K.; Cheow, S. L.; Zaidi, S. H.

2017-09-01

Crystalline silicon (c-Si) solar cell, ever since its inception, has been identified as the only economically and environmentally sustainable renewable resource to replace fossil fuels. Performance c-Si based photovoltaic (PV) technology has been equal to the task. Its price has been reduced by a factor of 250 over last twenty years (from ˜ 76 USD to ˜ 0.3 USD); its market growth is expected to reach 100 GWP by 2020. Unfortunately, it is still 3-4 times higher than carbon-based fuels. With the matured PV manufacturing technology as it exists today, continuing price reduction poses stiff challenges. Alternate manufacturing approaches in combination with thin wafers, low (< 10 x) optical enhancement with Fresnel lenses, band-gap engineering for enhanced optical absorption, and newer, advanced solar cell configurations including partially transparent bifacial and back contact solar cells will be required. This paper will present a detailed, cost-based analysis of advanced solar cell manufacturing technologies aimed at higher (˜ 22 %) efficiency with existing equipment and processes.

Will silicon be the photonic material of the third millenium?

International Nuclear Information System (INIS)

Pavesi, L

2003-01-01

Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

Quality of some Nigerian coals as a blending stock in metallurgical ...

African Journals Online (AJOL)

Lafia- Obi/foreign coals blends possess lower ash and better rheological properties compared to Chikila/foreign coal composites which have high ash and poor rheological properties. These together suggest that amongst the two Nigerian coals, Lafia-Obi is superior for blending with the foreign ones in metallurgical coke ...

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Recent developments in silicon calorimetry

International Nuclear Information System (INIS)

Brau, J.E.

1990-11-01

We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC

Silicon technologies ion implantation and thermal treatment

CERN Document Server

Baudrant, Annie

2013-01-01

The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Process for converting coal into liquid fuel and metallurgical coke

Science.gov (United States)

Wolfe, Richard A.; Im, Chang J.; Wright, Robert E.

1994-01-01

A method of recovering coal liquids and producing metallurgical coke utilizes low ash, low sulfur coal as a parent for a coal char formed by pyrolysis with a volatile content of less than 8%. The char is briquetted and heated in an inert gas over a prescribed heat history to yield a high strength briquette with less than 2% volatile content.

Photopolymerizable silicone monomers, oligomers, and resins

International Nuclear Information System (INIS)

Jacobine, A.F.; Nakos, S.T.

1992-01-01

The purpose of this chapter is to acquaint the general photopolymer researcher with the historical development of the chemistry and technology of photopolymerizable silicone monomers, fluids, and resins. The current status of research in these areas is assessed. The focus of this chapter is not only on the polymer chemistry and application of this technology, but also on important aspects of the synthetic chemistry involved in the preparation of UV-curable silicone monomers, oligomers, and resins. 236 refs., 6 tabs

Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

Science.gov (United States)

Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

1986-01-01

The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

Centralised process control of the metallurgical operation at Roessing, South West Africa/Namibia

International Nuclear Information System (INIS)

Thomas, R.; Erlank, B.

1987-01-01

A Honeywell TDC 2000 central process control system was installed at Roessing in 1984. The system controls the metallurgical operations from crushing to the finished product of uranium oxide and manufacture of sulphuric acid. The operation was previously controlled from nine separate local control rooms. The paper briefly reviews the design and commissioning of the control system on an operating plant and discusses the impact on manpower organisation and training needs. Development of the process control system during its first two years of operation is reviewed and a summary is given of the current status of computer control at Roessing. The impact of the new system on overall plant operation and performance efficiency is also briefly described. In conclusion, future developments of computer control and overall optimisation of metallurgical operations are reviewed

Nigerian Journal of Technology: Editorial Policies

African Journals Online (AJOL)

The Nigerian Journal of Technology is based at the Faculty of Engineering, University of Nigeria, Nsukka and has been in ... The paper should cover any aspects of engineering education, planning, analysis ... Chemical, Industrial, Materials, Mechanical, Metallurgical, Petroleum ... Engr. Dr. C.A. Mgbemene Business Editor.

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

A thermo-metallurgical constitutive law of steels for structural mechanics

International Nuclear Information System (INIS)

Waeckel, Francois

1994-01-01

The aim of this work is to include the metallurgical behaviour of steels (and specifically their phases transformations) into thermo-mechanical studies. For this, a new model of aniso-thermal phase transformations during the cooling stage is proposed. Developed in the thermodynamics framework of simple materials with memory variables, its originality lies in the choice of the temperature time derivative T as independent variable. The identification and the transformation rates computation use the C.C.T. diagrams which are considered as families of particular solutions of evolution equations. The validation shows ability of the model to simulate all C.C.T. deductible tests. Furthermore, for some tests not included into the C.C.T., the numerical results remain good and the model, from which evolution equation form has been let free, allows to incorporate them to the identification data without modifying the C.C.T. simulation accuracy. Lastly, to take into account structural transformations mechanical effects, some currently used models have been introduced, together with the metallurgical model, in a finite element code. They allow whole quenching or welding simulations (up to residual stresses) as demonstrated by application examples. (author) [fr

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Metallurgical behavior of fine fractions of copper sulfide minerals in a combined process of modified flotation and agitated bio leaching

International Nuclear Information System (INIS)

Ibanez, J. P.; Ipinza, J.; Collao, N.; Ahlborn, G.

2007-01-01

The metallurgical behaviour of fine fraction of copper sulfide minerals of Compania Minera Quebrada Blanca S. A. was studied by concentration through flotation in aqueous media modified by alcohol followed by bio leaching of the concentrates. By using a 1% v/v of methanol, the metallurgical recovery of copper reaches 88%, while the iron recovery was 43%, the weight recovery was 18%, which indicates a high selectivity. these concentrates were then bio leached with and without nutrient medium, reaching 80% of copper recovery after 10 and 17 days, respectively. then, it is possible to conclude that this concentration-bio leaching metallurgical process is a promising route for copper recovery from the fine fraction of sulfide minerals. (Author) 24 refs

Short p-type silicon microstrip detectors in 3D-stc technology

Energy Technology Data Exchange (ETDEWEB)

Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

2008-10-21

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

Manufacturing technologies for photovoltaics and possible means of their development in Russia (Review). Part 1: General approach to the development of photoelectric converters and basic silicon technologies

Science.gov (United States)

Tarasenko, A. B.; Popel', O. S.

2015-11-01

The state and key tendencies of the development of basic technologies for manufacture of photoelectric converters (PECs) in the world are considered, and their advantages and disadvantages are discussed. The first part of the review gives short information on the development of photovoltaics in the world and planes of the development of solar power plants in Russia. Total power of photoelectric plants operating in various countries in 2015 exceeded 150 GW and increased in the last ten years with a rate of approximately 50% per year. Russia made important state decisions on the support of the development of renewable power engineering and developed mechanisms, which were attractive for business, on the stimulation of building of the network of solar power plants with a total power to 1.5 GW in the country to 2020. At the same time, the rigid demands are made with respect to the localization of the production of components of these plants that opens new abilities for the development of the domestic production of photovoltaics manufacture. Data on the efficiency of PECs of various types that are attained in the leading laboratories of the world are given. Particular emphasis has been placed on the consideration of basic silicon technologies of PEC manufacture, which had the widest commercial application. The basic methods for production of polycrystalline silicon and making single-crystal and multicrystal silicon are described. Fundamentals of making techniques for plates, PECs, and photoelectric modules based on single-crystal and polycrystalline silicon are considered. The second part will be devoted to modifications of manufacturing techniques for photoelectric converters, enhancement methods for contact structures, and recommendations of authors with respect to the choice of prospective technologies for the expansion of PEC production in Russia. It will involve formulations and substantiations of the most promising lines of the development of photoelectric

Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC

CERN Document Server

Barth, C; Bloch, I.; Bögelspacher, F.; de Boer, W.; Daniels, M.; Dierlamm, A.; Eber, R.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Erfle, J.; Feld, L.; Garutti, E.; Gregor, I. -M.; Guthoff, M.; Hartmann, F.; Hauser, M.; Husemann, U.; Jakobs, K.; Junkes, A.; Karpinski, W.; Klein, K.; Kuehn, S.; Lacker, H.; Mahboubi, K.; Müller, Th.; Mussgiller, A.; Nürnberg, A.; Parzefall, U.; Poehlsen, T.; Poley, L.; Preuten, M.; Rehnisch, L.; Sammet, J.; Schleper, P.; Schuwalow, S.; Sperlich, D.; Stanitzki, M.; Steinbrück, G.; Wlochal, M.

2016-01-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Phys...

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Technology for the large-scale production of multi-crystalline silicon solar cells and modules

International Nuclear Information System (INIS)

Weeber, A.W.; De Moor, H.H.C.

1997-06-01

In cooperation with Shell Solar Energy (formerly R and S Renewable Energy Systems) and the Research Institute for Materials of the Catholic University Nijmegen the Netherlands Energy Research Foundation (ECN) plans to develop a competitive technology for the large-scale manufacturing of solar cells and solar modules on the basis of multi-crystalline silicon. The project will be carried out within the framework of the Economy, Ecology and Technology (EET) program of the Dutch ministry of Economic Affairs and the Dutch ministry of Education, Culture and Sciences. The aim of the EET-project is to reduce the costs of a solar module by 50% by means of increasing the conversion efficiency as well as the development of cheap processes for large-scale production

Ab initio electronic properties of dual phosphorus monolayers in silicon

DEFF Research Database (Denmark)

Drumm, Daniel W.; Per, Manolo C.; Budi, Akin

2014-01-01

In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon...

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

Energy Technology Data Exchange (ETDEWEB)

Galperin, V. A.; Kitsyuk, E. P. [“Technological Center” Research-and-Production Company (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation); Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru [“Technological Center” Research-and-Production Company (Russian Federation)

2015-12-15

New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

Full-color OLED on silicon microdisplay

Science.gov (United States)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

International Nuclear Information System (INIS)

Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

2013-06-01

In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

Magnetic spherules from the soils near the slag dump of the Nizhniy Tagil metallurgical plant

Directory of Open Access Journals (Sweden)

A. B. Makarov

2017-12-01

Full Text Available Magnetic spherules, which are widespread in soils, can have different origins, but spherules with cosmic origin are the most studied. At that, functioning of numerous industrial enterprises of metallurgical profile, thermal power stations, and motor transport can be their origin. According to the data of previous researchers, spherical magnetic particles in soils can serve as an indicator for quantitative assessment of erosion-accumulative phenomena. The authors studied magnetic spherules, isolated from soil samples taken near the dump of blast furnace and metallurgical slags of a large Nizhny Tagil metallurgical plant located on the left bank of the Olkhovka river, functioning since 1949. The way the dump forms is by draining slag along the slope. Consequently, adjacent territories are exposed to a significant dust load, associated with increased concentrations of a number of heavy metals: chromium, iron, manganese, vanadium, copper and zinc. The study of magnetic spherules performed for samples of soils taken at a distance of 50 and 100 m to the west of the dump showed that the content of magnetic fraction in them was 15.1 and 11.7% respectively, of the mineral part of the samples. The authors studied magnetic spherules on a scanning microscope JEOL JSM 6390LV, an at that provide their morphology and the chemical composition of magnetic spherules (18 analyzes and aggregates on their surface (5 analyzes. Based on the presence of characteristic impurity elements, there are the following varieties: zinc, manganese, vanadium, determined by the peculiarities of metallurgical processes. Low concentrations of spherules in soils do not allow considering them as a significant source of pollution of natural environment, only a slight increase in the content of heavy metals characteristic for them is possible.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

QEM*SEM: a necessary tool in the metallurgical evaluation of ore bodies

International Nuclear Information System (INIS)

Creelman, R.A.; Gottlieb, P.; Sutherland, D.; Jackson, R.

1989-01-01

The QEM*SEM system for automated image analysis of mineral samples is described. Details of the equipment are given together with information on the methods of measurement. Finally some practical applications are described where QEM*SEM has been used for the solution of metallurgical problems. 14 refs., 1 fig

Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

International Nuclear Information System (INIS)

Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

1989-01-01

Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

SECI model and facilitation in change management in metallurgical enterprise

Directory of Open Access Journals (Sweden)

K. Grzybowska

2013-04-01

Full Text Available Organisational change management is not efficient without gaining and sharing knowledge by the members of the enterprise. Both in the conditions of relative organisational stability and in organisational chaos resulting from dynamic introduction and management of changes there is a constant need of improvement and of shaping competences and distribution of knowledge in the enterprise. The publication presents key programs of building knowledge conducted in a metallurgical enterprise.

Silicon Detectors-Tools for Discovery in Particle Physics

International Nuclear Information System (INIS)

Krammer, Manfred

2009-01-01

Since the first application of Silicon strip detectors in high energy physics in the early 1980ies these detectors have enabled the experiments to perform new challenging measurements. With these devices it became possible to determine the decay lengths of heavy quarks, for example in the fixed target experiment NA11 at CERN. In this experiment Silicon tracking detectors were used for the identification of particles containing a c-quark. Later on, the experiments at the Large Electron Positron collider at CERN used already larger and sophisticated assemblies of Silicon detectors to identify and study particles containing the b-quark. A very important contribution to the discovery of the last of the six quarks, the top quark, has been made by even larger Silicon vertex detectors inside the experiments CDF and D0 at Fermilab. Nowadays a mature detector technology, the use of Silicon detectors is no longer restricted to the vertex regions of collider experiments. The two multipurpose experiments ATLAS and CMS at the Large Hadron Collider at CERN contain large tracking detectors made of Silicon. The largest is the CMS Inner Tracker consisting of 200 m 2 of Silicon sensor area. These detectors will be very important for a possible discovery of the Higgs boson or of Super Symmetric particles. This paper explains the first applications of Silicon sensors in particle physics and describes the continuous development of this technology up to the construction of the state of the art Silicon detector of CMS.

Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

International Nuclear Information System (INIS)

Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

1984-01-01

Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

Effect of metallurgical variables on void swelling

International Nuclear Information System (INIS)

Johnston, W.G.; Lauritzen, T.; Rosolowski, J.H.; Turkalo, A.M.

1976-01-01

The mechanism of void swelling is reviewed briefly and the anticipated effects of metallurgical variables are described. Experimental results showing the effects of metallurgical variables are reviewed, most of the work being done by simulation methods employing charged particle bombardments to simulate reactor damage. Although the early emphasis was on structural variables such as grain size, cold work and precipitates to control swelling, it now seems that the practical reduction of swelling will be achieved by modifying alloy composition. Void swelling is strongly influenced by the relative amounts of Fe, Cr, and Ni in an alloy; the amount of swelling can be varied by three orders of magnitude by changing the relative amounts of the three elements in an austenitic ternary alloy. The effect of composition on swelling of a simple ferritic alloy will also be described. The swelling of a simple austenitic alloy of Fe, Cr, and Ni can be reduced by certain minor element additions. The most effective swelling inhibitors are Si, Ti, Zr, and Nb, and combinations of Si and Ti are synergetic. Swelling reductions of two orders of magnitude have been achieved with combined additions. Predictions of swelling in commercial solid solution alloys are made on the basis of the present knowledge of the effects of major composition and minor element additions. The predictions agree with experimental results. For more complex commercial alloys, predictions are made for the effects on swelling of heat treatments that cause changes in matrix composition. In some cases, heat treatment is expected to change the peak swelling by more than a factor of ten, and to shift the peak swelling temperature by almost 100 0 C. Sensitivity of swelling to detailed matrix composition places emphasis on the need for developing understanding of the stability of structure and local composition in an irradiation environment

Using silicone technology to maintain healthy skin in stoma care.

Science.gov (United States)

White, Maddie

The use of silicone in stoma care has grown in recent years and may be considered the next step in the revolutionary development of stoma-care products. Clinical nurse specialists aim to provide evidence-based care at all times, and the same is true for stoma-care nurses. Preventing harm by choosing products that have a sound research base provides the patients with up-to-date, quality care, which enables them to adapt to life with a stoma and return to 'normal' functioning. This article explores the issue of peristomal skin problems and the development of silicone products, and highlights scenarios where it could be an advantage to choose a silicone product.

Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

Science.gov (United States)

Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

2016-03-01

This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

Silicon integrated circuits part A : supplement 2

CERN Document Server

Kahng, Dawon

1981-01-01

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

Test and Analysis of Metallurgical Converter Equipment

Directory of Open Access Journals (Sweden)

Shan Pang

2013-05-01

Full Text Available Oxygen top-blow converter is the main equipment in steel making, and its work reliability decides the security and economy of steel production. Therefore, how to design and test analysis of convertor has been an important subject of industry research. Geometric modelling and structure analysis of converter tilting device by using Pro/E program .The design Principle, basic design structure were analyzed in detail. The computer simulation software of metallurgical converter equipment and how to use it were introduced .It developed by VC++ software. The position of barycentre and moment curve in No.3 and No.4 are calculated. The converter acceleration down dip can be resolved by comparing the moment curve and center curve.

A comparison of the metallurgical behaviour of dispersion fuels with uranium silicides and U6Fe as dispersants

International Nuclear Information System (INIS)

Nazare, S.

1984-01-01

In the past few years metallurgical studies have been carried out to develop fuel dispersions with U-densities up to 7.0 Mg U m -3 . Uranium silicides have been considered to be the prime candidates as dispersants; U 6 Fe being a potential alternative on account of its higher U-density. The objective of this paper is to compare the metallurgical behaviour of these two material combinations with regard to the following aspects: (1) preparation of the compounds U 3 Si, U 3 Si 2 and U 6 Fe; (2) powder metallurgical processing to miniature fuel element plates; (3) reaction behaviour under equilibrium conditions in the relevant portions of the ternary U-Si-Al and U-Fe-Al systems; (4) dimensional stability of the fuel plates after prolonged thermal treatment; (5) thermochemical behaviour of fuel plates at temperatures near the melting point of the cladding. Based on this data, the possible advantages of each fuel combination are discussed. (author)

Project development for mining-metallurgical complexes for production of uranium concentrates - an analysis and a methodology

International Nuclear Information System (INIS)

Ajuria G, S.; Blanco P, B.; Pena A, J.; Manzanera Q, C.

1978-10-01

Activities comprising the development of a project for a mining-metallurgical complex for production of uranium concentrates, from sampling and evaluation of an orebody until plant start-up, are analyzed. The analysis of the orebody, characterization of the ore, bench scale and pilot plant metallurgical studies, environmental studies and economic analyses of the project are described. The mining project and mine preparation and engineering and construction of the plant are reviewed in less detail. The estimated time lapse for the development of a typical project under ideal conditions is 66 months. A bar diagram is included showing an approximate timetable for each activity. (author)

Correlation Between the Efficiency of Machinery and Equipment and the Productivity of Workers and its Effect on the Performance of a Metallurgical Undertaking

Directory of Open Access Journals (Sweden)

Kulawik, A.

2007-01-01

Full Text Available In this paper the example of procedure of life and objectify work effectiveness analysis in metallurgical enterprise were presented. Besides, on the example of chosen units of metallurgical enterprise, results of analysis - based on methodic proposed in the article - were discussed.

Photovoltaic technology, performance, manufacturing cost and markets

International Nuclear Information System (INIS)

Maycock, P.D.

1999-01-01

A comprehensive discussion of key aspects of photovoltaic energy conversion systems will provide the basis for forecasting PV module shipments from 1999 to 2010. Principal areas covered include: (1) Technology and Performance Status: The module efficiency and performance are described for commercial cell technologies including single crystal silicon, polycrystal silicon, ribbon silicon, film silicon on low cost substrate, amorphous silicon, copper indium diselenide, and cadmium telluride; (2) Manufacturing cost: 1999 costs for PV technologies in production (single crystal silicon, polycrystal silicon, and amorphous silicon) are developed. Manufacturing costs for 10--25 MW plants and 100 MW plants will be estimated; (3) The world PV market is summarized by region, top ten companies, and technology; and (4) Forecast of the World Market (seven market sectors) to 2010 will be presented. Key assumptions, price of modules, incentive programs, price of competing electricity generation will be detailed

Comparative metallurgical study of thick hard coatings without cobalt

International Nuclear Information System (INIS)

Clemendot, F.; Van Duysen, J.C.; Champredonde, J.

1992-07-01

Wear and corrosion of stellite type hard coatings for valves of the PWR primary system raise important problems of contamination. Substitution of these alloys by cobalt-free hard coatings (Colmonoy 4 and 4.26, Cenium 36) should allow to reduce this contamination. A comparative study (chemical, mechanical, thermal, metallurgical), as well as a corrosion study of these coatings were carried out. The results of this characterization show that none of the studied products has globally characteristics as good as those of grade 6 Stellite currently in service

Metallurgical sessions. Second ALAMET congress (held in) Buenos Aires, Argentina, 6-10 May 1991

International Nuclear Information System (INIS)

1991-01-01

This congress was held in Buenos Aires, Argentine Republic, on May 6-10, 1991, gathering experts from all over the world. The present volume includes the papers presented at the Metallurgical Sessions - II. ALAMET Congress [es

Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

CERN Document Server

Radamson, Henry

2014-01-01

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

DEB-silicone rubber hydrogen absorbing Raman detection technology research

International Nuclear Information System (INIS)

Yang Suolong; Zhong Jingrong; Wang Huang; Yang Kaixu; Xiao Jiqun; Liu Jiaxi; Liao Junsheng

2012-01-01

The DEB-Pd/C hydrogen getter powder and DEB-Pd/C-silicone rubber getter film were prepared and used for hydrogen detection in close systems by laser Raman method. The DEB alkanes Raman peak intensity changes with the getter time were monitored by Raman spectrometer. As a result, silicone rubber has good compatibility with DEB getter, slow access to hydrogen and good flexible. The alkanes peak intensity-getter time followed a exponential rule. DEB getter films are suitable for Raman on-line monitor of cumulative hydrogen of a closed system at long time. (authors)

Metallurgical study of the iberian weapons found in jutia valley (Nerpio-Yeste, Albacete, Spain. Work, weaponry, rituals and mountain communities

Directory of Open Access Journals (Sweden)

Marc Gener Moret

2016-11-01

Full Text Available We present a metallurgical study of weapons of the Iberian Iron Age documented in the high-altitude valley of Jutia (Nerpio-Yeste, Albacete, Spain integrated in the analysis of their specific archaeological context and as part of our ongoing research about the forms of organization of mountain landscapes during the Iron Age. The results are especially valid in the case of a soliferreum, whose metallographic analysis allows us to characterize the technology of its production process, and a lance tip, whose analysis raises arguments about the complex social life and the various social actions potentially linked to the objects placed in ritual and funerary contexts.

Possibilities of Formation of Dioxins and Furans in Metallurgical Processes as well as Methods of their Reduction

Directory of Open Access Journals (Sweden)

Holtzer, M.

2007-01-01

Full Text Available The metallurgical industry, among others, generates various kinds of wastes: gaseous, dusts, wastes and sewage. Special attention of the European Union is directed towards the elimination or significant reduction of the gaseous-dust contamination emissions including the most hazardous compounds, such as dioxins and furans. In the article the sources of dioxins and furans in metallurgical industry are described along with the reduction methods of these pollutants. Particularly the activities recommended as the Best Available Techniques (BAT in order to reduce the PCDD/PCDF emission from sintering processes, non-ferrous metallurgy and foundry engineering have been presented.

Integrated double-sided silicon microstrip detectors

Directory of Open Access Journals (Sweden)

Perevertailo V. L.

2011-11-01

Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

Atomic and electronic structures of novel silicon surface structures

Energy Technology Data Exchange (ETDEWEB)

Terry, J.H. Jr.

1997-03-01

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

The two faces of coal : uncertainty the common prospect for metallurgical and thermal coal

International Nuclear Information System (INIS)

Zlotnikov, D.

2010-01-01

Although the methods of producing thermal and metallurgical coal are the same, metallurgical coal is destined to cross the world for steel manufacturing and thermal coal is destined for power plants close to where it was mined. This article discussed the factors influencing the price of these 2 coals. The production of thermal coal can remain steady during an economic crisis because coal-fired power plants generally provide low-cost-base-load electricity that remains stable during economic cycles. However, the demand for metallurgical coal is more volatile during an economic crisis because it is directly related to the demand for steel products in the construction and automotive industry, which are very sensitive to the state of the economy. There have been recent indications that Canada's export market for thermal coal is on the rise. In 2008, China became a net importer of coking coal. China's need for more coal to fuel its growing economy despite the global economic slowdown has meant that producers are diverting excess supply from European markets to China. Higher-end thermal coal offers low sulphur content and higher energy content, both desirable traits for power utilities facing strict emissions control. In addition to having huge reserves of very high-quality coal that is becoming increasingly important to China, Canada has the advantage of having the available transportation capacity in its west coast terminals and on its rail network. 3 figs.

Silicon drift detectors, present and future prospects

Science.gov (United States)

Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

2001-04-01

Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

Metallurgical recovery of metals from electronic waste: A review

International Nuclear Information System (INIS)

Cui Jirang; Zhang Lifeng

2008-01-01

Waste electric and electronic equipment, or electronic waste, has been taken into consideration not only by the government but also by the public due to their hazardous material contents. In the detailed literature survey, value distributions for different electronic waste samples were calculated. It is showed that the major economic driver for recycling of electronic waste is from the recovery of precious metals. The state of the art in recovery of precious metals from electronic waste by pyrometallurgical processing, hydrometallurgical processing, and biometallurgical processing are highlighted in the paper. Pyrometallurgical processing has been a traditional technology for recovery of precious metals from waste electronic equipment. However, state-of-the-art smelters are highly depended on investments. Recent research on recovery of energy from PC waste gives an example for using plastics in this waste stream. It indicates that thermal processing provides a feasible approach for recovery of energy from electronic waste if a comprehensive emission control system is installed. In the last decade, attentions have been removed from pyrometallurgical process to hydrometallurgical process for recovery of metals from electronic waste. In the paper, hydrometallurgical processing techniques including cyanide leaching, halide leaching, thiourea leaching, and thiosulfate leaching of precious metals are detailed. In order to develop an environmentally friendly technique for recovery of precious metals from electronic scrap, a critical comparison of main leaching methods is analyzed for both economic feasibility and environmental impact. It is believed that biotechnology has been one of the most promising technologies in metallurgical processing. Bioleaching has been used for recovery of precious metals and copper from ores for many years. However, limited research was carried out on the bioleaching of metals from electronic waste. In the review, initial researches on the

Metallurgical recovery of metals from electronic waste: A review

Energy Technology Data Exchange (ETDEWEB)

Cui Jirang [Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Alfred Getz vei 2, N-7491 Trondheim (Norway)], E-mail: Jirang.Cui@material.ntnu.no; Zhang Lifeng [Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Alfred Getz vei 2, N-7491 Trondheim (Norway)], E-mail: zhanglife@mst.edu

2008-10-30

Waste electric and electronic equipment, or electronic waste, has been taken into consideration not only by the government but also by the public due to their hazardous material contents. In the detailed literature survey, value distributions for different electronic waste samples were calculated. It is showed that the major economic driver for recycling of electronic waste is from the recovery of precious metals. The state of the art in recovery of precious metals from electronic waste by pyrometallurgical processing, hydrometallurgical processing, and biometallurgical processing are highlighted in the paper. Pyrometallurgical processing has been a traditional technology for recovery of precious metals from waste electronic equipment. However, state-of-the-art smelters are highly depended on investments. Recent research on recovery of energy from PC waste gives an example for using plastics in this waste stream. It indicates that thermal processing provides a feasible approach for recovery of energy from electronic waste if a comprehensive emission control system is installed. In the last decade, attentions have been removed from pyrometallurgical process to hydrometallurgical process for recovery of metals from electronic waste. In the paper, hydrometallurgical processing techniques including cyanide leaching, halide leaching, thiourea leaching, and thiosulfate leaching of precious metals are detailed. In order to develop an environmentally friendly technique for recovery of precious metals from electronic scrap, a critical comparison of main leaching methods is analyzed for both economic feasibility and environmental impact. It is believed that biotechnology has been one of the most promising technologies in metallurgical processing. Bioleaching has been used for recovery of precious metals and copper from ores for many years. However, limited research was carried out on the bioleaching of metals from electronic waste. In the review, initial researches on the

4D tracking with ultra-fast silicon detectors

Science.gov (United States)

F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

2018-02-01

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

Some results of medical researches at Ulba Metallurgical Plant

Energy Technology Data Exchange (ETDEWEB)

Artemieva, G.I.; Novikov, V.G.; Savchuk, V.V. [Ulba Metallurgical Plant, Ust-Kamenogorsk (Kazakhstan)

1998-01-01

The results of 45-years medical researches at beryllium production of Ulba Metallurgical Plant are summarized in this report. Statistic data on different kinds of occupational diseases, related to beryllium production and the dynamics of changing occupational diseases with the development of beryllium production, are given there. Data on average duration of life of occupational disease patients are presented in the report. It includes the description of problems, related to berylliosis diagnosis. Issues, connected to beryllium production effect on health of man, located nearby beryllium production are also discussed there as well. (author)

A cost roadmap for silicon heterojunction solar cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

2016-01-01

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

A Cost Roadmap for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

Regional distribution of the metallurgical industry in the Czech Republic

OpenAIRE

T. Sadilek

2017-01-01

The aim of the article is to present the regional distribution of the metallurgical industry in the Czech Republic and to describe the specific factors which determine the localization of the industry in Czech regions. In order to achieve that goal, traditional tools of regional analysis are used, such as concentration analysis, used in business-to-business marketing, which does not describe the absolute size of the industry, but its relative size, focusing on the relation between the employe...

Qualification of a new supplier for silicon particle detectors

Energy Technology Data Exchange (ETDEWEB)

Dragicevic, M., E-mail: marko.dragicevic@cern.ch [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Frühwirth, E. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J.; Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

2013-12-21

Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors are capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European semiconductor manufacturer Infineon Technologies Austria AG the Institute of High Energy Physics of the Austrian Academy of Sciences developed planar silicon strip sensors in p-on-n technology. This paper presents the development, production and results from the electrical characterisation of the first sensors produced by Infineon.

Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

International Nuclear Information System (INIS)

Quoizola, S.

2003-01-01

The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

International Nuclear Information System (INIS)

Suat, J.P.; Borel, J.

1976-01-01

The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application

Energy Technology Data Exchange (ETDEWEB)

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

AUTOMATION OF OPERATIONAL CONTROL OF DATA FLOWS OF THE METALLURGICAL ENTERPRISE ORGANIZATIONAL STRUCTURE

Directory of Open Access Journals (Sweden)

A. N. Chichko

2006-01-01

Full Text Available New method for creation of models of operative control of enterprise is offered. The computer variant of the organizational structure, based on analysis of the charging dynamics of control units, is offered and illustrated at the example of one of organizational structures of Belorussian metallurgical works.

Silicon photonics: some remaining challenges

Science.gov (United States)

Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

2016-03-01

This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

Metallurgical flow recognition by random signal analysis of stress wave emissions

International Nuclear Information System (INIS)

Woodward, B.

1973-01-01

The present study involves detailed random signal analysis of individual 'bursts' of emission with objective of 'reading' their frequency spectra to identify specific metallurgical mechanisms. Mild steel unnotched testpieces were used in the early stages of development of this research. From a fracture mechanics point of view this research could lead to a powerful nondestructive testing device allowing identification of interior, instead of only surface, deformation mechanisms. (author)

Practical silicon Light emitting devices fabricated by standard IC technology

International Nuclear Information System (INIS)

Aharoni, H.; Monuko du Plessis; Snyman, L.W.

2004-01-01

Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Seventh workshop on the role of impurities and defects in silicon device processing

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-08-01

This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Synchrotron X-ray imaging applied to solar photovoltaic silicon

International Nuclear Information System (INIS)

Lafford, T A; Villanova, J; Plassat, N; Dubois, S; Camel, D

2013-01-01

Photovoltaic (PV) cell performance is dictated by the material of the cell, its quality and purity, the type, quantity, size and distribution of defects, as well as surface treatments, deposited layers and contacts. A synchrotron offers unique opportunities for a variety of complementary X-ray techniques, given the brilliance, spectrum, energy tunability and potential for (sub-) micron-sized beams. Material properties are revealed within in the bulk and at surfaces and interfaces. X-ray Diffraction Imaging (X-ray Topography), Rocking Curve Imaging and Section Topography reveal defects such as dislocations, inclusions, misorientations and strain in the bulk and at surfaces. Simultaneous measurement of micro-X-Ray Fluorescence (μ-XRF) and micro-X-ray Beam Induced Current (μ-XBIC) gives direct correlation between impurities and PV performance. Together with techniques such as microscopy and Light Beam Induced Current (LBIC) measurements, the correlation between structural properties and photovoltaic performance can be deduced, as well as the relative influence of parameters such as defect type, size, spatial distribution and density (e.g [1]). Measurements may be applied at different stages of solar cell processing in order to follow the evolution of the material and its properties through the manufacturing process. Various grades of silicon are under study, including electronic and metallurgical grades in mono-crystalline, multi-crystalline and mono-like forms. This paper aims to introduce synchrotron imaging to non-specialists, giving example results on selected solar photovoltaic silicon samples.

Silicon nanoparticles: Preparation, properties, and applications

International Nuclear Information System (INIS)

Chang Huan; Sun Shu-Qing

2014-01-01

Silicon nanoparticles have attracted great attention in the past decades because of their intriguing physical properties, active surface state, distinctive photoluminescence and biocompatibility. In this review, we present some of the recent progress in preparation methodologies and surface functionalization approaches of silicon nanoparticles. Further, their promising applications in the fields of energy and electronic engineering are introduced. (invited review — international conference on nanoscience and technology, china 2013)

Explosion bonding of dissimilar materials for fabricating APS front end components: Analysis of metallurgical and mechanical properties and UHV applications

International Nuclear Information System (INIS)

Li, Yuheng; Shu, Deming; Kuzay, T.M.

1994-01-01

The front end beamline section contains photon shutters and fixed masks. These components are made of OFHC copper and GlidCOP AL-15. Stainless steels (304 or 316) are also used for connecting photon shutters and fixed masks to other components that operate in the ultrahigh vacuum system. All these dissimilar materials need to be joined together. However, bonding these dissimilar materials is very difficult because of their different mechanical and thermal properties and incompatible metallurgical properties. Explosion bonding is a bonding method in which the controlled energy of a detonating explosive is used to create a metallurgical bond between two or more similar or dissimilar materials. No intermediate filler metal, for example, a brazing compound or soldering alloy, is needed to promote bonding, and no external heat need be applied. A study of the metallurgical and mechanical properties and YGV applications of GlidCop AL-15, OFHC copper, and 304 stainless steel explosion-bonded joints has been done. This report contains five parts: an ultrasonic examination of explosion-bonded joints and a standard setup; mechanical-property and thermal-cycle tests of GlidCop AL-15/304 stainless steel explosion-bonded joints; leak tests of a GlidCop AL-15/304 stainless steel explosion-bonded interfaces for UHV application; metallurgical examination of explosion-bonded interfaces and failure analysis, and discussion and conclusion

Metallurgical bond between magnesium AZ91 alloy and aluminium plasma sprayed coatings

Czech Academy of Sciences Publication Activity Database

Kubatík, Tomáš František; Pala, Zdeněk; Neufuss, Karel; Vilémová, Monika; Mušálek, Radek; Stoulil, J.; Slepička, P.; Chráska, Tomáš

2015-01-01

Roč. 282, November (2015), s. 163-170 ISSN 0257-8972 R&D Projects: GA ČR(CZ) GP14-31538P Institutional support: RVO:61389021 Keywords : Plasma spraying * AZ91 magnesium alloy * Aluminium * Metallurgical bond * X-ray diffraction Subject RIV: JK - Corrosion ; Surface Treatment of Materials Impact factor: 2.139, year: 2015 http://www.sciencedirect.com/science/article/pii/S0257897215303297

Mechanical engineering and design of silicon-based particle tracking devices

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

1990-01-01

The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

Industrial Silicon Wafer Solar Cells

OpenAIRE

Neuhaus, Dirk-Holger; Münzer, Adolf

2007-01-01

In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

Study of the Metallurgical Aspects of Steel Micro-Alloying by Titan

Directory of Open Access Journals (Sweden)

Kijac, J.

2006-01-01

Full Text Available The metal properties upgrading applying it’s alloying with the simultaneous limitation of the impurities represents a prospective possibility of the metallurgical production further development. The interaction of the alloying substance active element with oxygen in metal and adjacent multiphase environment occurs under the actual conditions. Present paper is oriented particularly to the thermodynamic aspects of deoxygenation by titan in process of production of micro alloyed low carbon steel in two plants (oxygen converter 1-OC1 and 2-OC2 with the different effect of micro-alloy exploitation. Analysis of the effect of the metallurgical factors on the titan smelting loss in micro-alloyed steel production points at the need to master the metal preparation for the alloying and especially has got the decisive effect upon the oxidizing ability and rate of the slag phase availability. When comparing the micro-alloying matter yield among the individual production units, disclosed have been better results obtained in plant OC 2. Confirmed has been the effect of the slag amount (average amount of 7,3 t at OC 1 and 5,83 t at OC 2 and its quality during the steel tapping as one among the most significant factors affecting the alloying process and which also represent its oxidizing potential.

A deep etching mechanism for trench-bridging silicon nanowires.

Science.gov (United States)

Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

2016-03-04

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

A deep etching mechanism for trench-bridging silicon nanowires

International Nuclear Information System (INIS)

Tasdemir, Zuhal; Alaca, B Erdem; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf

2016-01-01

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. (paper)

A deep etching mechanism for trench-bridging silicon nanowires

Science.gov (United States)

Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

2016-03-01

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

Conservation of mining and metallurgic arachaeologic wooden objects by impregnation and radiation curing

International Nuclear Information System (INIS)

Schaudy, R.; Slais, E.; Eibner, C.

1983-05-01

The conservation of mining and metallurgic archaeologic wooden objects of different grade of destruction by impregnation with radiation-curable impregnating agents followed by in-situ-curing with gamma rays is described. Dry objects have been consolidated after cautious cleaning, whereas wet findings had to be freezedried first. The results are discussed. (Author) [de

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Atomic scale simulations of hydrogen implantation defects in hydrogen implanted silicon - smart Cut technology

International Nuclear Information System (INIS)

Bilteanu, L.

2010-12-01

The topic of this thesis is related to the implantation step of the SmartCut TM technology. This technology uses hydrogen in order to transfer silicon layers on insulating substrates. The transfer is performed through a fracture induced by the formation of bidimensional defects well known in literature as 'platelets'. More exactly, we have studied within this thesis work the defects appearing in the post implant state and the evolution of the implantation damage towards a state dominated by platelets. The study is organised into two parts: in the first part we present the results obtained by atomic scale simulations while in the second part we present an infrared spectroscopy study of the evolution of defects concentrations after annealing at different temperatures. The atomic scale simulations have been performed within the density functional theory and they allowed us to compute the formation energies and the migration and recombination barriers. The defects included in our study are: the atomic and diatomic interstitials, the hydrogenated vacancies and multi-vacancies and the several platelets models. The obtained energies allowed us to build a stability hierarchy for these types of defects. This scheme has been confronted with some infrared analysis on hydrogen implanted silicon samples (37 keV) in a sub-dose regime which does not allow usually the formation of platelets during the implantation step. The analysis of the infrared data allowed the detailed description of the defects concentration based on the behaviour of peaks corresponding to the respective defects during annealing. The comparison between these evolutions and the energy scheme obtained previously allowed the validation of an evolution scenario of defects towards the platelet state. (author)

Wear and corrosion performance of metallurgical coatings in sodium

International Nuclear Information System (INIS)

Johnson, R.N.; Farwick, D.G.

1980-01-01

The friction, wear, and corrosion performance of several metallurgical coatings in 200 to 650 0 C sodium are reviewed. Emphasis is placed on those coatings which have successfully passed the qualification tests necessary for acceptance in breeder reactor environments. Tests include friction, wear, corrosion, thermal cycling, self-welding, and irradiation exposure under as-prototypic-as-possible service conditions. Materials tested were coatings of various refractory metal carbides in metallic binders, nickel-base and cobalt-base alloys and intermetallic compounds such as the aluminides and borides. Coating processes evaluated included plasma spray, detonation gun, sputtering, spark-deposition, and solid-state diffusion

White-light emission from porous-silicon-aluminium Schottky junctions

International Nuclear Information System (INIS)

Masini, G.; La Monica, S.; Maiello, G.

1996-01-01

Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

Process metallurgical evaluation and application of very fine bubbling technology

Energy Technology Data Exchange (ETDEWEB)

Catana, C.; Gotsis, V.S.; Dourdounis, E.; Angelopoulos, G.N.; Papamantellos, D.C. [Lab. of Metallurgy, Univ. of Patras, Rio (Greece); Mavrommatis, K. [IEHK, RWTH Aachen, Aachen (Germany)

2002-12-01

The potential of VFB (Very Fine Bubbling)-technology in steelmaking, developed for the production of super clean steels, was investigated. Recent R and D work has proven that with very fine argon bubbling through a developed Special Porous Plug (SPP) at low flow rates, the total oxygen content of low carbon steel grades can be lowered to a level of 6 ppm under industrial vacuum conditions and to a level of 10 ppm under argon protective atmosphere. The perspective of industrial application of the VFB technology to a 56-t ladle furnace of Helliniki Halyvourgia S.A., Greece, in order to improve steel cleanliness, requires additional R and D efforts. It is important to define the limits of VFB technology in respect of alloys dissolution, mixing time and homogenisation of steel and slag/metal reactions. In this work, a gas driven bubble aqueous reactor model simulating the bottom gas stirred ladle by means of gas injection through a SPP and a conventional porous plug was studied. Various operating conditions as well as different positions for the porous plug with and without a top oil layer were simulated. Tests concerning mixing time, solid-liquid mass transfer and critical gas flow rate, liquid/liquid mass transfer, using the SPP and a conventional porous plug have been performed. The evaluation of experimental results delivered important information for the design and operation of steel ladles, applying VFB-technology. Experimental results with SPP bubbles' agitated steel (1600 C) in laboratory and technical scale experiments in IF and VIF are presented and discussed. (orig.)

Metallurgical aspects of corrosion resistance of aluminium alloys

Energy Technology Data Exchange (ETDEWEB)

Reboul, M.C. [Pechiney Voreppe Research Centre France (France); CNRS-INP Grenoble, SIMAP-INP Grenoble, Universite France, Saint Martin d' Heres Cedex (France); Baroux, B. [SIMAP-INP, Grenoble University, 1130 rue de la piscine, Saint Martin d' Heres Cedex (France)

2011-03-15

Aluminium is the second most often used metal after steel. In this paper, the most current uses of aluminium alloys are first summarised. Then, their different corrosion modes, i.e. pitting, crevice, filiform, galvanic and structural corrosion (including inter-granular, exfoliation and stress corrosion cracking) are reviewed, with particular attention paid to metallurgical factors controlling the corrosion process. For each mode, some instances of possible in-service failure are given, followed by the discussion of the involved mechanisms and the presentation of appropriate solutions to prevent corrosion. Last, passivity and polarisation behaviour are discussed with reference to stainless steels. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Theoretical and experimental research on the use of expert systems (ES in assessing risks of failure in metallurgical companies

Directory of Open Access Journals (Sweden)

E. Iancu

2013-04-01

Full Text Available The systems’ engineering has reached an explosive development of intelligent systems technology which solves complex problems based on human expertise accumulated in the past and following the processes of learning and reasoning very similar to those of the biological brain. In this article, the concept of the proposed expert system is the result of interdisciplinary researches (computer science, management, accounting and business administration, etc., which are designed to provide a tool for top management work force of a listed metallurgical company. The inference machine will provide in the end score functions for Altman, Conan Holder model and rating which eventually can be combined into a single model that will forecast the company’s evolution in coming years.

Mechanical and Metallurgical Properties of Various Nickel-Titanium Rotary Instruments

OpenAIRE

Shim, Kyu-Sang; Oh, Soram; Kum, KeeYeon; Kim, Yu-Chan; Jee, Kwang-Koo; Chang, Seok Woo

2017-01-01

The aim of this study was to investigate the effect of thermomechanical treatment on mechanical and metallurgical properties of nickel-titanium (NiTi) rotary instruments. Eight kinds of NiTi rotary instruments with sizes of ISO #25 were selected: ProFile, K3, and One Shape for the conventional alloy; ProTaper NEXT, Reciproc, and WaveOne for the M-wire alloy; HyFlex CM for the controlled memory- (CM-) wire; and TF for the R-phase alloy. Torsional fracture and cyclic fatigue fracture tests were...

Effect of Cooling Rate on the Microstructure of Al-Zn Alloys with Addition of Silicon as Nanocomposite

Directory of Open Access Journals (Sweden)

S. García-Villarreal

2013-01-01

Full Text Available Al-43.5Zn-1.5Si (wt% alloys are widely used as coatings on steel substrates. This kind of coatings is manufactured by hot-dip process, in which Si is added as solid particles or master alloy. The role of Si during formation of the coating is to control the metallurgical reactions between solid steel and liquid Al-Zn-Si alloy initially forming an AlZnFeSi intermetallic layer and next the excess of Si forms intermetallic compounds, which grows over this alloy layer, segregates into the Zn rich interdendritic regions, and solidifies as eutectic reaction product as massive particles with needle like morphology. Therefore, during the experimental procedure is very difficult to control the final morphology and distribution of the silicon phase. The acicular morphology of this phase greatly affects the mechanical properties of the alloy because it acts as stress concentrators. When the coated steel sheet is subjected to bending, the coating presents huge cracks due to the presence of silicon phase. Therefore, the aim of the paper was to propose a new methodology to control the silicon phase through its addition to Al-Zn alloy as nanocomposite and additionally determine the effect of cooling rate (between 10 and 50°Cs−1 on the solidification microstructure and mechanical properties of Al-Zn alloy.

Key Lake Mining Corporation metallurgical complex

International Nuclear Information System (INIS)

Lendrum, F.C.

1984-02-01

The Key Lake uranium mine is located in Saskatchewan, 550 km northeast of Saskatoon. It began operations in 1983, and is licensed and regulated by both Saskatchewan government agencies and the Canadian Atomic Energy Control Board. This report examines the metallurgical processes used at the mill and discusses the spills that occurred in the first four months the mine was in operation. It finds that all spills of an acidic nature in the mill were small amounts in the CCD or solution pretreatment sections. Contingency procedures are in place and sumps are capable of handling spills. The only major change in design contemplated will be converting the secondary crushing from the use of an impact crusher to the use of a semi-autogeneous grinding mill. The monitoring program set out by the AECB and Saskatchewan Environment is thorough. It monitors effluents and water pathways, and includes aquatic biota and sediments. Air monitoring is also required by Saskatchewan Environment

Porous silicon nanoparticles for target drag delivery: structure and morphology

International Nuclear Information System (INIS)

Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

2015-01-01

Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

Development of Solar Grade (SoG) Silicon

Energy Technology Data Exchange (ETDEWEB)

Joyce, David B; Schmid, Frederick

2008-01-18

The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

Highly sensitive luminescence method of scandium determination in the products of metallurgical reprocessing

International Nuclear Information System (INIS)

Matveets, M.A.; Akhmetova, S.D.

1988-01-01

Highly sensitive reaction of scandium with 1,10-phenanthroline and eosin is used for the development of luminescence method of its determination in metallurgical products. The effect of interfering elements is eliminated by scandium extraction with monocarboxylic acids. The method permits to determine scandium content from 5 x 10 -5 % (Sr 0.15 - 0.25)

Automatic Processing of Metallurgical Abstracts for the Purpose of Information Retrieval. Final Report.

Science.gov (United States)

Melton, Jessica S.

Objectives of this project were to develop and test a method for automatically processing the text of abstracts for a document retrieval system. The test corpus consisted of 768 abstracts from the metallurgical section of Chemical Abstracts (CA). The system, based on a subject indexing rational, had two components: (1) a stored dictionary of words…

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Silicon pore optics for future x-ray telescopes

DEFF Research Database (Denmark)

Wille, Eric; Bavdaz, Marcos; Wallace, Kotska

2017-01-01

arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor...... industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested...

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Science.gov (United States)

Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

2018-03-01

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Silicon microstrip detectors in 3D technology for the sLHC

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-08-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10{sup 15}N{sub eq}/cm{sup 2}, hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Silicon microstrip detectors in 3D technology for the sLHC

International Nuclear Information System (INIS)

Parzefall, Ulrich; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor; Parkes, Chris; Pennicard, David; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10 15 N eq /cm 2 , hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Fiscal 1993 R and D project for industrial science and technology. Report on results of R and D on silicon-based high polymer material; 1993 nendo keisokei kobunshi zairyo no kenkyu kaihtsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on the silicon-based high polymer that are hoped for superior electronic/optical functions and heat/flame-resistant dynamical properties, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method, with the fiscal 1993 results summarized. In the synthesis of electrically conductive silicon-based polymeric materials, a concept of indirect doping was presented, revealing that workability and electrically conductive properties were enhanced by additives. In the synthesis of new silicon-based polymeric materials capable of circuit plotting, studies were made on Si-Si bond forming reaction of alkoxydisilanes as well as on the correlation between polysilane skeleton structure and its property. In the synthesis of new silicon-based polymeric materials having for example a light-emitting function, evaluation was made on synthesis and light emitting property concerning the compound that controlled the silicon skeleton structure. In addition, R and D was conducted on the precision synthesis technology of compounds, on which manifestation of photoelectric conversion function was expected. Further, research was done on unsaturated and high coordination organosilicic compound, functionality of silicon-based high polymer, and synthesis/polymerization of silicon monomer. (NEDO)

Production of Copper as a Complex Mining and Metallurgical Processing System in Polish Copper Mines of the Legnica-Glogów Copper Belt

Science.gov (United States)

Malewski, Jerzy

2017-12-01

Geological and technological conditions of Cu production in the Polish copper mines of the Legnica-Glogów Copper Belt are presented. Cu production is recognized as a technological fractal consisting of subsystems for mineral exploration, ore extraction and processing, and metallurgical treatment. Qualitative and quantitative models of these operations have been proposed, including estimation of their costs of process production. Numerical calculations of such a system have been performed, which allow optimize the system parameters according to economic criteria under variable Cu mineralization in the ore deposit. The main objective of the study is to develop forecasting tool for analysis of production efficiency in domestic copper mines based on available sources of information. Such analyses are primarily of social value, allowing for assessment of the efficiency of management of local mineral resources in the light of current technological and market constraints. At the same time, this is a concept of the system analysis method to manage deposit exploitation on operational and strategic level.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

DC characteristics and parameters of silicon carbide high-voltage power BJTs

International Nuclear Information System (INIS)

Patrzyk, Joanna; Zarębski, Janusz; Bisewski, Damian

2016-01-01

The paper shows the static characteristics and operating parameters of the bipolar power transistors made of silicon carbide and for comparison their equivalents made of classical silicon technology. The characteristics and values of selected operating parameters with special emphasis on the effect of temperature and operating point of considered devices are discussed. Quantitative as well as qualitative differences between the characteristics of the transistor made of silicon and silicon carbide are indicated as well

Metallurgical Characterization of Reduced Activation Martensitic Steel F-82H Modified

International Nuclear Information System (INIS)

Fernandez, P.; Lapena, J.; Lancha, A.M.; Gomez-Briceno, D.; Schirra, M.

1999-12-01

During 1995-1998 within of research and development programs on reduced ferritic/martensitic steels for fusion, metallurgical characterization of 8Cr-2WVTa steel, denominated F-28H modified, have been carried out. The work has focused on studying the microstructural and mechanical (tensile, creep, low cycle fatigue and charpy) characteristics of as-received state and aged material in the temperature range 300 degree centigrade to 600 degree centigrade for periods up to 5000 h. (Author) 45 refs

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Black silicon with black bus-bar strings

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

2016-01-01

We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Black bus-bars were realized by oxidized copper resulting in reflectance below 3% in the entire visible wavelength range. The combination of these two technologies may result in aesthetic, all-black panels based on conventional, front-contacted solar cells...

Market Opportunity of Some Aluminium Silicon Alloys Materials through Changing the Casting Process

Directory of Open Access Journals (Sweden)

Delfim SOARES

2012-08-01

Full Text Available Fatigue is considered to be the most common mechanism by which engineering components fail, and it accounts for at least 90% of all service failures attributed to mechanical causes. Mechanical properties (tensile strength, tensile strain, Young modulus, etc as well as fatigue properties (fatigue life are very dependent on casting method. The most direct effects of casting techniques are on the metallurgical microstructure that bounds the mechanical properties. One of the important variables affected by the casting technique is the cooling rate which is well known to strongly restrict the microstructure. In the present research has been done a comparison of fatigue properties of two aluminum silicon alloys obtained by two casting techniques. It was observed that the fatigue life is increasing with 24% for Al12Si and 31% for AL18Si by using centrifugal casting process instead of gravity casting. This increasing in fatigue life means that a component tailored from materials obtained by centrifugal casting will stay longer in service. It was made an estimation of the time required to recover the costs of technology in order to use the centrifuge process that will allow to obtain materials with improved properties. The amortization can be achieved by using two different marketing techniques: through the release of the product at the old price and with much longer life of the component which means "same price - longer life", or increasing price, by highlighting new product performance which means "higher price - higher properties".

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Fatigue analysis of a structure with welds considering metallurgical discontinuities

International Nuclear Information System (INIS)

Cabrillat, M.T.; Lejeail, Y.

1995-01-01

Within the frameworks of a creep-fatigue experimental program, called EVASION, thermo-mechanical tests were conducted on two mock-ups, the first one was fully machined and the second one welded and then machined (in order to eliminate geometrical discontinuities, thus only leaving metallurgical discontinuities). These two mock-ups were submitted to exactly the same loading history. Plastic analyses with a correct description of mechanical properties and fatigue strength of materials are conducted and compared with experimental results in order to highlight the influence of the weld. (author). 3 refs., 4 figs., 3 tabs

Mode-locked silicon evanescent lasers.

Science.gov (United States)

Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

2007-09-03

We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

First results of systematic studies done with silicon photomultipliers

International Nuclear Information System (INIS)

Bosio, C.; Gentile, S.; Kuznetsova, E.; Meddi, F.

2008-01-01

Multicell avalanche photodiode structure operated in Geiger mode usually referred as silicon photomultiplier is a new intensively developing technology for photon detection. Insensitivity to magnetic fields, low operation voltage and small size make silicon photomultipliers very attractive for high-energy physics, astrophysics and medical applications. The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse samples of silicon photomultipliers available on market. The response to low-intensity light was studied for silicon photomultipliers produced by CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).

Clinical evaluation comparing the fit of all-ceramic crowns obtained from silicone and digital intraoral impressions based on wavefront sampling technology.

Science.gov (United States)

Pradíes, Guillermo; Zarauz, Cristina; Valverde, Arelhys; Ferreiroa, Alberto; Martínez-Rus, Francisco

2015-02-01

The aim of this study was to compare the fit of ceramic crowns fabricated from conventional silicone impressions with the fit of ceramic crowns fabricated from intraoral digital impressions. Twenty-five participants with 30 posterior teeth with a prosthetic demand were selected for the study. Two crowns were made for each preparation. One crown was fabricated from an intraoral digital impression system (IDI group) and the other crown was fabricated from a conventional two-step silicone impression (CI group). To replicate the interface between the crown and the preparation, each crown was cemented on its corresponding clinical preparation with ultra-flow silicone. Each crown was embedded in acrylic resin to stabilise the registered interface and then cut in 2mm thick slices in a buco-lingual orientation. The internal gap was determined as the vertical distance from the internal surface of the crown to the prepared tooth surface at four points (marginal gap, axial gap, crest gap, and occlusal fossa gap) using stereomicroscopy with a magnification of 40×. Data was analysed by using Wilcoxon signed rank test (α=0.05). Internal adaptation values were significantly affected by the impression technique (p=0.001). Mean marginal gap was 76.33 ± 65.32 μm for the crowns of the IDI group and 91.46 ± 72.17 μm for the CI group. All-ceramic crowns fabricated from intraoral digital impressions with wavefront sampling technology demonstrated better internal fit than crowns manufactured from silicone impressions. Impressions obtained from an intraoral digital scanner based on wavefront sampling technology can be used for manufacturing ceramic crowns in the normal clinical practice with better results than conventional impressions with elastomers. Copyright © 2014 Elsevier Ltd. All rights reserved.

Latest developments on the highly granular Silicon-Tungsten Electromagnetic Calorimeter technological prototype for the International Large Detector

CERN Document Server

Irles, Adrián

2017-01-01

High precision physics at future colliders requires unprecedented highly granular calorimeters for the application of the Particle Flow (PF) algorithm. The physical proof of concept was given in the previous campaign of beam tests of physic prototypes within the CALICE collaboration. We present here the latest beam and laboratory test results and R&D developments for the Silicon-Tungsten Electromagnetic Calorimeter technological prototype with fully embedded very front-end (VFE) electronics for the International Large Detector at the International Linear Collider project.

Magnetohydrodynamic research in fusion blanket engineering and metallurgical processing

International Nuclear Information System (INIS)

Tokuhiro, A.

1991-11-01

A review of recent research activities in liquid metal magnetohydrodynamics (LM-MHDs) is presented in this article. Two major reserach areas are discussed. The first topic involves the thermomechanical design issues in a proposed tokamak fusion reactor. The primary concerns are in the magneto-thermal-hydraulic performance of a self-cooled liquid metal blanket. The second topic involves the application of MHD in material processing in the metallurgical and semiconductor industries. The two representative applications are electromagnetic stirring (EMS) of continuously cast steel and the Czochralski (CZ) method of crystal growth in the presence of a magnetic field. (author) 24 figs., 10 tabs., 136 refs

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Silicon integrated circuits advances in materials and device research

CERN Document Server

Kahng, Dawon

1981-01-01

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

High-End Silicon PDICs

Directory of Open Access Journals (Sweden)

H. Zimmermann

2008-05-01

Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

Low cost silicon solar array project. Task 1: Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH4

Science.gov (United States)

Breneman, W. C.; Mui, J. Y. P.

1976-01-01

The kinetics of the redistribution of dichlorosilane and trichlorosilane vapor over a tertiary amine ion exchange resin catalyst were investigated. The hydrogenation of SiCl4 to form HSiCl3 and the direct synthesis of H2SiCl2 from HCl gas and metallurgical silicon metal were also studied. The purification of SiH4 using activated carbon adsorbent was studied along with a process for storing SiH4 absorbed on carbon. The latter makes possible a higher volumetric efficiency than compressed gas storage. A mini-plant designed to produce ten pounds per day of SiH4 is described.

The LHCb Silicon Tracker, first operational results

CERN Document Server

Esperante, D; Adeva, B; Gallas, A; Pérez Trigo, E; Rodríguez Pérez, P; Pazos Álvarez, A; Saborido, J; Vàzquez, P; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; de Cian, M; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The Large Hadron Collider beauty (LHCb) experiment at CERN (Conseil Européen pour la Recherche Nucléaire) is designed to perform precision measurements of b quark decays. The LHCb Silicon Tracker consists of two sub-detectors, the Tracker Turicensis and the Inner Tracker, which are built from silicon micro-strip technology. First performance results of both detectors using data from Large Hadron Collider synchronization tests are presented.

Infrared characterization of some oxygen-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Hallberg, T.

1993-01-01

This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

Obtaining of dense and highly porous ceramic materials from metallurgical slag

OpenAIRE

Fidancevska E.; Mangutova B.; Milosevski D.; Milosevski M.; Bossert J.

2003-01-01

Glass-ceramics in a dense and highly porous form can be obtained from metallurgical slag and waste glass of TV monitors. Using polyurethane foam as pore creator, a highly porous system with porosity of 65 ± 5 %, E-modulus and flexural strength of 8 ± 3 GPa and 13 ± 3.5 MPa respectively can be obtained. This porous material had durability (mass loss) of 0.03 % in 0.1 M HCl that is identical with the durability of a dense composite.

Effect of glass-ceramic-processing cycle on the metallurgical properties of candidate alloys for actuator housings

Energy Technology Data Exchange (ETDEWEB)

Weirick, L.J.

1982-01-01

This report summarizes the results from an investigation on the effect of a glass ceramic processing cycle on the metallurgical properties of metal candidates for actuator housings. The cycle consists of a 980/sup 0/C sealing step, a 650/sup 0/C crystallization step and a 475/sup 0/C annealing step. These temperatue excursions are within the same temperature regime as annealing and heat treating processes normally employed for metals. Therefore, the effect of the processing cycle on metallurgical properties of microstructure, strength, hardness and ductility were examined. It was found that metal candidates which are single phase or solid solution alloys (such as 21-6-9, Hastelloy C-276 and Inconel 625) were not affected whereas multiphase or precipitation hardened alloys (such as Inconel 718 and Titanium ..beta..-C) were changed by the processing cycle for the glass ceramic.

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

Science.gov (United States)

Nasr Esfahani, Mohammad; Kilinc, Yasin; Çagatay Karakan, M.; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; Erdem Alaca, B.

2018-04-01

The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μ m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Technology challenges for ultrasmall silicon MOSFET's

International Nuclear Information System (INIS)

Dennard, R.H.

1981-01-01

Work on silicon MOSFET devices scaled down to half-micron dimensions is gathering momentum in research labs for VLSI applications. Further reductions in device geometries by only a factor of two will bring us to the edge of some fundamental barriers to miniaturization. Design requirements for very thin layers in the device structure lead to resistance effects, statistical fluctuation of doping impurities, and increased concern for interface properties. Scaling down of applied voltage is difficult because built-in junction potentials and other small voltage terms are no longer negligible. Increased susceptibility to spurious operation or permanent damage from alpha particles, cosmic particles, or other high-energy radiation is reviewed

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Impurities in silicon and their impact on solar cell performance

NARCIS (Netherlands)

Coletti, Gianluca

2011-01-01

Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

Bio-alteration of metallurgical wastes by Pseudomonas aeruginosa in a semi flow-through reactor.

Science.gov (United States)

van Hullebusch, Eric D; Yin, Nang-Htay; Seignez, Nicolas; Labanowski, Jérôme; Gauthier, Arnaud; Lens, Piet N L; Avril, Caroline; Sivry, Yann

2015-01-01

Metallurgical activities can generate a huge amount of partially vitrified waste products which are either landfilled or recycled. Lead Blast Furnace (LBF) slags are often disposed of in the vicinity of metallurgical plants, and are prone to weathering, releasing potentially toxic chemical components into the local environment. To simulate natural weathering in a slag heap, bioweathering of these LBF slags was studied in the presence of a pure heterotrophic bacterial strain (Pseudomonas aeruginosa) and in a semi-flow through reactor with intermittent leachate renewal. The evolution of water chemistry, slag composition and texture were monitored during the experiments. The cumulative bulk release of dissolved Fe, Si, Ca and Mg doubled in the presence of bacteria, probably due to the release of soluble complexing organic molecules (e.g. siderophores). In addition, bacterial biomass served as the bioadsorbent for Pb, Fe and Zn as 70-80% of Pb and Fe, 40-60% of Zn released are attached to and immobilized by the bacterial biomass. Copyright © 2014 Elsevier Ltd. All rights reserved.

Metallurgical characterization of pulsed current gas tungsten arc, friction stir and laser beam welded AZ31B magnesium alloy joints

International Nuclear Information System (INIS)

Padmanaban, G.; Balasubramanian, V.

2011-01-01

This paper reports the influences of welding processes such as friction stir welding (FSW), laser beam welding (LBW) and pulsed current gas tungsten arc welding (PCGTAW) on mechanical and metallurgical properties of AZ31B magnesium alloy. Optical microscopy, scanning electron microscopy, transmission electron microscopy and X-Ray diffraction technique were used to evaluate the metallurgical characteristics of welded joints. LBW joints exhibited superior tensile properties compared to FSW and PCGTAW joints due to the formation of finer grains in weld region, higher fusion zone hardness, the absence of heat affected zone, presence of uniformly distributed finer precipitates in weld region.

Strain-induced generation of silicon nanopillars

International Nuclear Information System (INIS)

Bollani, Monica; Osmond, Johann; Nicotra, Giuseppe; Spinella, Corrado; Narducci, Dario

2013-01-01

Silicon metal-assisted chemical etching (MACE) is a nanostructuring technique exploiting the enhancement of the silicon etch rate at some metal–silicon interfaces. Compared to more traditional approaches, MACE is a high-throughput technique, and it is one of the few that enables the growth of vertical 1D structures of virtually unlimited length. As such, it has already found relevant technological applications in fields ranging from energy conversion to biosensing. Yet, its implementation has always required metal patterning to obtain nanopillars. Here, we report how MACE may lead to the formation of porous silicon nanopillars even in the absence of gold patterning. We show how the use of inhomogeneous yet continuous gold layers leads to the generation of a stress field causing spontaneous local delamination of the metal—and to the formation of silicon nanopillars where the metal disruption occurs. We observed the spontaneous formation of nanopillars with diameters ranging from 40 to 65 nm and heights up to 1 μm. Strain-controlled generation of nanopillars is consistent with a mechanism of silicon oxidation by hole injection through the metal layer. Spontaneous nanopillar formation could enable applications of this method to contexts where ordered distributions of nanopillars are not required, while patterning by high-resolution techniques is either impractical or unaffordable. (paper)

University Crystalline Silicon Photovoltaics Research and Development

Energy Technology Data Exchange (ETDEWEB)

Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

2008-08-18

The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

Dynawave froth scrubbing technology

International Nuclear Information System (INIS)

McLean, J.E.

1989-01-01

The DynaWave family of scrubbers was developed and patented by DuPont in the 1970's and is used extensively within the company. Because the technology was treated as confidential, information about the scrubbers was not published outside of DuPont. In 1986 Monsanto Enviro-Chem was asked to install a Reverse Jet scrubber at DuPont's Burnside spent acid recovery pant to replace an aging spray humidifying tower. Enviro-Chem was impressed with the technology and entered into a licensing agreement with DuPont in late 1987. This paper addresses the application of DynaWave froth scrubbing technology to metallurgical plant process and effluent gas streams. Froth scrubber design principles an sampling results from pilot plant trails on fluid bed roaster off-gas are presented

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

International Nuclear Information System (INIS)

Huang Pengcheng; Chen Shuming; Chen Jianjun

2016-01-01

In this paper, the effect of floating body effect (FBE) on a single event transient generation mechanism in fully depleted (FD) silicon-on-insulator (SOI) technology is investigated using three-dimensional technology computer-aided design (3D-TCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect (FBE) whether for positive or negative channel metal oxide semiconductor (PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking (IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout. (paper)

Obtaining of dense and highly porous ceramic materials from metallurgical slag

Directory of Open Access Journals (Sweden)

Fidancevska E.

2003-01-01

Full Text Available Glass-ceramics in a dense and highly porous form can be obtained from metallurgical slag and waste glass of TV monitors. Using polyurethane foam as pore creator, a highly porous system with porosity of 65 ± 5 %, E-modulus and flexural strength of 8 ± 3 GPa and 13 ± 3.5 MPa respectively can be obtained. This porous material had durability (mass loss of 0.03 % in 0.1 M HCl that is identical with the durability of a dense composite.

A Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

OpenAIRE

Berman, G. P.; Doolen, G. D.; Tsifrinovich, V. I.

2000-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines the well-developed silicon technology with expected advances in MRFM.

The development of the market for neutron transmutation doped silicon

International Nuclear Information System (INIS)

Herzer, H.; Vieweg-Gutberlet, G.

1984-01-01

Neutron transmutation doped silicon was introduced to the electronic device market in the 1975-1976 time period. Today, neutron transmutation doping is definitely a mature technology applied mainly to semiconductor power devices. There is no doubt that the power device sector will remain the major consumer of NTD silicon in the near future. This paper examines the possible application of NTD silicon to other areas of the semiconductor market, and concludes that the need for NTD silicon will continue to grow and will expand into other applications. Consequently, unless new reactor capacities become available by the end of the decade, NTD silicon applications will probably be limited mainly to power and sensor devices

SiNTO EWT silicon solar cells

OpenAIRE

Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

2010-01-01

In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

GaN-on-Silicon - Present capabilities and future directions

Science.gov (United States)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Single-Event Effects in Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Large magnetoresistance effect in nitrogen-doped silicon

Directory of Open Access Journals (Sweden)

Tao Wang

2017-05-01

Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

Silicon pore optics for the international x-ray observatory

Science.gov (United States)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

First Mining workshop of Mining and metallurgical of MERCOSUR

International Nuclear Information System (INIS)

1994-01-01

In the city of Montevideo, capital of the Oriental Republic of Uruguay, at 23 days of September 1994, under the First Meeting of Mercosur Mining Metallurgical, meet representatives of the mining sector in the countries signed the Treaty of Asuncion , attended as observers, authorities of the Republic of Bolivia and Ecuador and representatives of the productive labor, legislative and research. The primary objective is to integrate the mining sectors of those countries, taking into account the specificity of the mining, given by the resource it uses, the need for high-risk investment with slow recoveries of capital and infrastructure problems, taking into account leverage and its remarkable impact on the development of regional economies.

Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

Economic assessment of possible electron accelerator applications in curing silicon rubber based electric installation material

International Nuclear Information System (INIS)

Rmot, L.

1976-01-01

A description is given of the conventional technology of production of conductors with silicon rubber insulation and of the radiation vulcanization method, i.e., the radiation cross-linking of silicon rubber. An economic comparison is shown for both technologies. The analysis shows that the indices for the radiation cross-linking technology are favourable and that the introduction thereof would be advantageous. (J.P.)

Investigation of silicon sensors quality as a function of the ohmic side processing technology

CERN Document Server

Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

2002-01-01

Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

Morphology, chemistry and distribution of neoformed spherulites in agricultural land affected by metallurgical point-source pollution

NARCIS (Netherlands)

Leguedois, S.; Oort, van F.; Jongmans, A.G.; Chevalier, P.

2004-01-01

Metal distribution patterns in superficial soil horizons of agricultural land affected by metallurgical point-source pollution were studied using optical and electron microscopy, synchrotron radiation and spectroscopy analyses. The site is located in northern France, at the center of a former entry

Light-Induced Degradation of Thin Film Silicon Solar Cells

International Nuclear Information System (INIS)

Hamelmann, F U; Weicht, J A; Behrens, G

2016-01-01

Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

Science.gov (United States)

Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

2013-01-01

Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

Metallurgical Design and Development of NASA Crawler/Transporter Tread Belt Shoe Castings

Science.gov (United States)

Parker, Donald S.

2006-01-01

The NASA Crawler/Transporters (CT-1 and CT-2) used to transport the Space Shuffles are one of the largest tracked vehicles in existence today. Two of these machines have been used to move space flight vehicles at Kennedy Space Center since the Apollo missions of the 1960's and relatively few modifications have been made to keep them operational. In September of 2003 during normal Crawler/Transporter operations cracks were observed along the roller pad surfaces of several tread belt shoes. Further examination showed 20 cracked shoes on CT-1 and 40 cracked shoes on CT-2 and a formal failure analysis investigation was undertaken while the cracked shoes were replaced. Six shoes were cross-sectioned with the fracture surfaces exposed and it was determined that the cracks were due to fatigue that initiated on the internal casting web channels at pre-existing casting defects and propagated through thickness both transgranularly and intergranularly between internal shrinkage cavities, porosity, and along austenitic and ferritic grain boundaries. The original shoes were cast during the 1960's using a modified 861330 steel with slightly higher levels of chromium, nickel and molybdenum followed by heat treatment to achieve a minimum tensile strength of 11 Oksi. Subsequent metallurgical analysis of the tread belt shoes after multiple failures showed excessive internal defects, alloy segregation, a nonuniform ferritic/ bainitic/martensitic microstructure, and low average tensile properties indicative of poor casting and poor heat-treatment. As a result, NASA funded an initiative to replace all of the tread belt shoes on both crawler/transporters along with a redesign of the alloy, manufacturing, and heat-treatment to create a homogeneous cast structure with uniform mechanical and metallurgical properties. ME Global, a wholly owned subsidiary of ME Elecmetal based in Minneapolis, MN was selected as manufacturing and design partner to develop the new shoes and this paper

The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

Science.gov (United States)

Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

2017-08-01

Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

Perspectives regarding the use of metallurgical slags as secondary metal resources - A review of bioleaching approaches.

Science.gov (United States)

Potysz, Anna; van Hullebusch, Eric D; Kierczak, Jakub

2018-05-05

Smelting activity by its very nature produces large amounts of metal-bearing waste, often called metallurgical slag(s). In the past, industry used to dispose of these waste products at dumping sites without the appropriate environmental oversight. Once there, ongoing biogeochemical processes affect the stability of the slags and cause the release of metallic contaminants. Rather than viewing metallurgical slags as waste, however, such deposits should be viewed as secondary metal resources. Metal bioleaching is a "green" treatment route for metallurgical slags, currently being studied under laboratory conditions. Metal-laden leachates obtained at the bioleaching stage have to be subjected to further recovery operations in order to obtain metal(s) of interest to achieve the highest levels of purity possible. This perspective paper considers the feasibility of the reuse of base-metal slags as secondary metal resources. Special focus is given to current laboratory bioleaching approaches and associated processing obstacles. Further directions of research for development of more efficient methods for waste slag treatment are also highlighted. The optimized procedure for slag treatment is defined as the result of this review and should include following steps: i) slag characterization (chemical and phase composition and buffering capacity) following the choice of initial pH, ii) the choice of particle size, iii) the choice of the liquid-to-solid ratio, iv) the choice of microorganisms, v) the choice of optimal nutrient supply (growth medium composition). An optimal combination of all these parameters will lead to efficient extraction and generation of metal-free solid residue. Copyright © 2018 Elsevier Ltd. All rights reserved.

Safety procedures used during the manufacturing of amorphous silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Dickson, C R

1987-01-01

The Solarex Thin Film Division is a leader in the manufacturing of amorphous-silicon products for sale in domestic and foreign markets. Similarly, Solarex assumes a leadership role in recognizing the importance of safety in a manufacturing environment. Although many of the safety issues are similar to those in the semiconductor industry, this paper presents topics specific to amorphous silicon technology and the manufacturing ,f amorphous-silicon products. These topics are deposition of conducting transparent oxides (CTOs), amorphous silicon deposition, laser scribing, processing chemicals, fire prevention and administrative responsibilities.

Effective recruitment method for the marketing department of a metallurgical enterprise

Directory of Open Access Journals (Sweden)

E. Jaba

2014-04-01

Full Text Available This paper presents some solutions to recruit staff for the Marketing Department of a metallurgical enterprise. Our goal is to present the psychological characteristics of a certain category of employees on a sample of 107 employees and to evaluate the relationship between the motivation to work and those characteristics. In order to realize such evaluation we used the linear mixed effects model in the statistical software program R. The results showed that a significant effect on work motivation have factors like work climate and the employee agreeability.

A multi-level code for metallurgical effects in metal-forming processes

Energy Technology Data Exchange (ETDEWEB)

Taylor, P.A.; Silling, S.A. [Sandia National Labs., Albuquerque, NM (United States). Computational Physics and Mechanics Dept.; Hughes, D.A.; Bammann, D.J.; Chiesa, M.L. [Sandia National Labs., Livermore, CA (United States)

1997-08-01

The authors present the final report on a Laboratory-Directed Research and Development (LDRD) project, A Multi-level Code for Metallurgical Effects in metal-Forming Processes, performed during the fiscal years 1995 and 1996. The project focused on the development of new modeling capabilities for simulating forging and extrusion processes that typically display phenomenology occurring on two different length scales. In support of model fitting and code validation, ring compression and extrusion experiments were performed on 304L stainless steel, a material of interest in DOE nuclear weapons applications.

Magnetic resonance force microscopy quantum computer with tellurium donors in silicon.

Science.gov (United States)

Berman, G P; Doolen, G D; Hammel, P C; Tsifrinovich, V I

2001-03-26

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations.

Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

International Nuclear Information System (INIS)

Berman, G. P.; Doolen, G. D.; Hammel, P. C.; Tsifrinovich, V. I.

2001-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations

Effects of different production technologies on mechanical and metallurgical properties of precious metal denture alloys

Science.gov (United States)

Ferro, Paolo; Battaglia, Eleonora; Capuzzi, Stefano; Berto, Filippo

2017-12-01

Precious metal alloys can be supplied in traditional plate form or innovative drop form with high degree of purity. The aim of the present work is to evaluate the influence of precious metal alloy form on metallurgical and mechanical properties of the final dental products with particular reference to metal-ceramic bond strength and casting defects. A widely used alloy for denture was selected; its nominal composition was close to 55 wt% Pd - 34 wt% Ag - 6 wt% In - 3 wt% Sn. Specimens were produced starting from the alloy in both plate and drop forms. A specific test method was developed to obtain results that could be representative of the real conditions of use. In order to achieve further information about the adhesion behaviour and resistance, the fracture surfaces of the samples were observed using `Scanning Electron Microscopy (SEM)'. Moreover, material defects caused by the moulding process were studied. The form of the alloy before casting does not significantly influence the shear bond strength between the metal and the ceramic material (p-value=0,976); however, according to SEM images, products from drop form alloy show less solidification defects compared to products obtained with plate form alloy. This was attributed to the absence of polluting additives used in the production of drop form alloy. This study shows that the use of precious metal denture alloys supplied in drop form does not affect the metal-ceramic bond strength compared to alloys supplied in the traditional plate form. However, compared to the plate form, the drop form is found free of solidification defects, less expensive to produce and characterized by minor environmental impacts.

Developing new technology of coal coking

Energy Technology Data Exchange (ETDEWEB)

Erkin, L.I.; Nefedov, P.Ya.

1981-03-01

This paper characterizes types of coke (grain size, compression strength, abrasion, porosity) used by: blast furnaces, shaft furnaces, ferroalloys and phosphorus production, and ore agglomeration. Development of formed metallurgical coke production on the basis of technologies worked out by the Eastern Research Scientific Institute for Coal Chemistry is analyzed. The following phases in the investigations are stressed: optimization of coal blends (increasing proportion of coals with poor caking properties, pressing briquets, carbonization, temperature distribution and temperature control, using heat emitted by hot coke for coal preheating (heat consumption of coking is reduced to 200 kcal/kg). On the basis of technology developed and tested by VUKhIN formed coke consisting of 60% G6 coal and 40% 2SS coal has been produced. Using the coke in blast furnaces increases furnace capacity by 5% and reduces coke consumption in a furnace by 2.6%. It is suggested that wide use of the proposed technology of formed metallurgical coke production in the Kuzbass (using coals with poor caking properties from surface mines) would increase coke production of the region to 50 Mt for a year. technology of producing formed foundry coke from: 80 to 86% anthracites, semianthracites and coals with poor caking properties, 5 to 10% coking coal, and 8% binder is evaluated. Formed foundry coke produced from the blend reduces coke consumption in a foundry by 25 to 30% and increases cast iron temperature by 20 to 50/sup 0/C. Technologies of producing coke for phosphorus industry by continuous coking of coals difficult to coke in vertical coke ovens and production of coke for ore agglomeration are also discussed. (In Russian)

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

International Nuclear Information System (INIS)

Bonneau, D; Engin, E; O'Brien, J L; Thompson, M G; Ohira, K; Suzuki, N; Yoshida, H; Iizuka, N; Ezaki, M; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zwiller, V

2012-01-01

Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform. (paper)

Process development for high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

1991-12-31

Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

Monocrystalline silicon solar cells applied in photovoltaic system

OpenAIRE

L.A. Dobrzański; A. Drygała; M. Giedroć; M. Macek

2012-01-01

Purpose: The aim of the paper is to fabricate the monocrystalline silicon solar cells using the conventional technology by means of screen printing process and to make of them photovoltaic system.Design/methodology/approach: The investigation of current – voltage characteristic to determinate basic electrical properties of monocrystalline silicon solar cells were investigated under Standard Test Condition. Photovoltaic module was produced from solar cells with the largest short-circuit curren...

Process of optimization of district heat production by utilizing waste energy from metallurgical processes

Science.gov (United States)

Konovšek, Damjan; Fužir, Miran; Slatinek, Matic; Šepul, Tanja; Plesnik, Kristijan; Lečnik, Samo

2017-07-01

In a consortium with SIJ (Slovenian Steel Group), Metal Ravne, the local community of Ravne na Koro\\vskem and the public research Institut Jožef Stefan, with its registered office in Slovenia, Petrol Energetika, d.o.o. set up a technical and technological platform of an innovative energy case for a transition of steel industry into circular economy with a complete energy solution called »Utilization of Waste Heat from Metallurgical Processes for District Heating of Ravne na Koro\\vskem. This is the first such project designed for a useful utilization of waste heat in steel industry which uses modern technology and innovative system solutions for an integration of a smart, efficient and sustainable heating and cooling system and which shows a growth potential. This will allow the industry and cities to make energy savings, to improve the quality of air and to increase the benefits for the society we live in. On the basis of circular economy, we designed a target-oriented co-operation of economy, local community and public research institute to produce new business models where end consumers are put into the centre. This innovation opens the door for steel industry and local community to a joint aim that is a transition into efficient low-carbon energy systems which are based on involvement of natural local conditions, renewable energy sources, the use of waste heat and with respect for the principles of sustainable development.

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Measurement of delta-rays in ATLAS silicon sensors

CERN Document Server

The ATLAS collaboration

2013-01-01

In the inner detector of the ATLAS experiment at the LHC, $\\delta$-rays originating from particle interactions in the silicon sensors may cause additional hit channels. A method for identifying silicon hit clusters that are enlarged due to the emission of a $\\delta$-ray is presented. Using pp collision data the expectation is confirmed that the $\\delta$-ray production rate depends linearly on the path length of the particle in silicon, independently of layer radius and detector technology. The range of the $\\delta$-rays, which is a property of the material and should not depend on anything else, is indeed found to be constant as a function of detector layer, path length in silicon and momentum of the particle traversing the silicon. As a by-product of this analysis a method is proposed that could correct for the effect of these $\\delta$-rays, and this could be used to improve track reconstruction.

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

Materials technology applied to nuclear accelerator targets

International Nuclear Information System (INIS)

Barthell, B.L.

1986-01-01

The continuing requests for both shaped and flat, very low areal density metal foils have led to the development of metallurgical quality, high strength products. Intent of this paper is to show methods of forming structures on various substrates using periodic vapor interruptions, alternating anodes, and mechanical peening to alter otherwise unacceptable grain morphology which both lowers tensile strength and causes high stresses in thin films. The three technologies, physical vapor deposition, electrochemistry, and chemical vapor deposition and their thin film products can benefit from the use of laminate technology and control of grain structure morphology through the use of materials research and technology

Solar breeder: Energy payback time for silicon photovoltaic systems

Science.gov (United States)

Lindmayer, J.

1977-01-01

The energy expenditures of the prevailing manufacturing technology of terrestrial photovoltaic cells and panels were evaluated, including silicon reduction, silicon refinement, crystal growth, cell processing and panel building. Energy expenditures include direct energy, indirect energy, and energy in the form of equipment and overhead expenses. Payback times were development using a conventional solar cell as a test vehicle which allows for the comparison of its energy generating capability with the energies expended during the production process. It was found that the energy payback time for a typical solar panel produced by the prevailing technology is 6.4 years. Furthermore, this value drops to 3.8 years under more favorable conditions. Moreover, since the major energy use reductions in terrestrial manufacturing have occurred in cell processing, this payback time directly illustrates the areas where major future energy reductions can be made -- silicon refinement, crystal growth, and panel building.

Comparative Analysis of the Principal Characteristics of Microsilica Obtained from Silicon Manufacture Wastes and Used in Concrete Production Technologies

Science.gov (United States)

Balabanov, V. B.; Putsenko, K. N.

2017-11-01

On the basis of the survey of foreign and domestic literature over the past 65 years devoted to the study of the properties and the technology of applying microsilica in the capacity of modifying additives to concretes. Microsilica obtained as a by-product from the waste of ferroalloy plants and from the plants involved in production of silicon compounds is discussed. Analysis of the principal characteristics of different types of microsilica obtained from different sources is conducted.

Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.

Science.gov (United States)

1980-05-30

Sunshine’s experiments less enlight - ening than they might otherwise have been. First, changes in optical transmittance could not be correlated directly to...silicon- on-sapphire technology ) and the orientation of the silicon surface ex- posed to the oxide layer44 ,46 ,4 7,51. Not enough data were taken to at...success. With rapid progress of semi- conductor technology , such simplified and largely intuitive methods proved to be inadequate for dealing with

Characterization of Tool Wear in High-Speed Milling of Hardened Powder Metallurgical Steels

Directory of Open Access Journals (Sweden)

Fritz Klocke

2011-01-01

Full Text Available In this experimental study, the cutting performance of ball-end mills in high-speed dry-hard milling of powder metallurgical steels was investigated. The cutting performance of the milling tools was mainly evaluated in terms of cutting length, tool wear, and cutting forces. Two different types of hardened steels were machined, the cold working steel HS 4-2-4 PM (K490 Microclean/66 HRC and the high speed steel HS 6-5-3 PM (S790 Microclean/64 HRC. The milling tests were performed at effective cutting speeds of 225, 300, and 400 m/min with a four fluted solid carbide ball-end mill (0 = 6, TiAlN coating. It was observed that by means of analytically optimised chipping parameters and increased cutting speed, the tool life can be drastically enhanced. Further, in machining the harder material HS 4-2-4 PM, the tool life is up to three times in regard to the less harder material HS 6-5-3 PM. Thus, it can be assumed that not only the hardness of the material to be machined plays a vital role for the high-speed dry-hard cutting performance, but also the microstructure and thermal characteristics of the investigated powder metallurgical steels in their hardened state.

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

Directory of Open Access Journals (Sweden)

Junichiro Shiomi

2016-10-01

Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

Rapid Prototyping of Nanofluidic Slits in a Silicone Bilayer

Science.gov (United States)

Kole, Thomas P.; Liao, Kuo-Tang; Schiffels, Daniel; Ilic, B. Robert; Strychalski, Elizabeth A.; Kralj, Jason G.; Liddle, J. Alexander; Dritschilo, Anatoly; Stavis, Samuel M.

2015-01-01

This article reports a process for rapidly prototyping nanofluidic devices, particularly those comprising slits with microscale widths and nanoscale depths, in silicone. This process consists of designing a nanofluidic device, fabricating a photomask, fabricating a device mold in epoxy photoresist, molding a device in silicone, cutting and punching a molded silicone device, bonding a silicone device to a glass substrate, and filling the device with aqueous solution. By using a bilayer of hard and soft silicone, we have formed and filled nanofluidic slits with depths of less than 400 nm and aspect ratios of width to depth exceeding 250 without collapse of the slits. An important attribute of this article is that the description of this rapid prototyping process is very comprehensive, presenting context and details which are highly relevant to the rational implementation and reliable repetition of the process. Moreover, this process makes use of equipment commonly found in nanofabrication facilities and research laboratories, facilitating the broad adaptation and application of the process. Therefore, while this article specifically informs users of the Center for Nanoscale Science and Technology (CNST) at the National Institute of Standards and Technology (NIST), we anticipate that this information will be generally useful for the nanofabrication and nanofluidics research communities at large, and particularly useful for neophyte nanofabricators and nanofluidicists. PMID:26958449

Silicon materials outlook study for 1980-85 calendar years

Energy Technology Data Exchange (ETDEWEB)

Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

1979-11-01

Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

Metals, words and gods. Early knowledge of metallurgical skills in Europe, and reflections in terminology

Directory of Open Access Journals (Sweden)

Solin Paliga

1993-12-01

Full Text Available How can metallurgical terminology - specifically names of metals - support ar­ chaeological investigation? Can comparative linguistics and archaeology co-operate in order to identify the emergence and development of metallurgical skills? How did Neolithic and Bronze Age man imagine the taming of nature in order to achieve metal artifacts? Such questions -and many others -may arise whenever we try to investigate the beginnings and making of civilization. It is clear that the various aspects connected to archaeometallurgy cannot be analyzed separately from other aspects of human life, like agriculture, trade, urbanization, religious beliefs, early writing systems, pottery techniques, a.o. The earliest known (or identifiable names of metals do reflect a cer­ tain ideology and a certain way of 'seeing' metals as imbued with magic powers. It is certain that colours and reflections - specific to metals - made early man interpret them as divine (Biek and Bayley 1979; Muşu 1981, chapter Symphony of colours, a first attempt in reconstructing pre-Greek names of colours.

[Hygienic assessment of metal-lurgical slag crushed stone for its use in road-building].

Science.gov (United States)

Tikhomirov, Iu P; Ippolitova, V P; Bezrokov, M E

2010-01-01

The increasing amount of industrial waste generates a need for its use as recycled materials. The paper presents the results of hygienic assessment of metallurgic slag crushed stone to be added to natural materials in highway building. The research program has included the measurement of content of water-soluble forms of metals, the evaluation of the acute toxicity of waste after oral administration to mice and rats, the study of the toxicity of waste by biotesting and the activity of natural radionuclides. The slag crushed stone virtually lacks water-soluble elements when it contains a high level of bulk forms of metals. According to acute toxicity for warm-blooded animals, the slag crushed stone belongs to Hazard Class IV by GOST 12.1.007-76 (low hazard substances). The biotesting on hydrocoles, the slag crushed stone is also referred to as Class IV (low hazard substances). In terms of the level of natural radionuclides, the slag crushed stone poses no hazard to the environment. The performed studies give grounds to recommend metallurgical slag crushed stone to be added to natural materials for highway building.

Study on the effect of heat treatment and gasification on the carbon structure of coal chars and metallurgical cokes using fourier transform Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

S. Dong; P. Alvarez; N. Paterson; D.R. Dugwell; R. Kandiyoti [Imperial College London, London (United Kingdom). Department of Chemical Engineering

2009-03-15

Differences in the development of carbon structures between coal chars and metallurgical cokes during high-temperature reactions have been investigated using Raman spectroscopy. These are important to differentiate between different types of carbons in dust recovered from the top gas of the blast furnace. Coal chars have been prepared from a typical injectant coal under different heat-treatment conditions. These chars reflected the effect of peak temperature, residence time at peak temperature, heating rate and pressure on the evolution of their carbon structures. The independent effect of gasification on the development of the carbon structure of a representative coal char has also been studied. A similar investigation has also been carried out to study the effect of heat-treatment temperature (from 1300 to 2000{sup o}C) and gasification on the carbon structure of a typical metallurgical coke. Two Raman spectral parameters, the intensity ratio of the D band to the G band (I{sub D}/I{sub G}) and the intensity ratio of the valley between D and G bands to the G band (I{sub V}/I{sub G}), have been found useful in assessing changes in carbon structure. An increase in I{sub D}/I{sub G} indicates the growth of basic graphene structural units across the temperature range studied. A decrease in I{sub V}/I{sub G} appears to suggest the elimination of amorphous carbonaceous materials and ordering of the overall carbon structure. The Raman spectral differences observed between coal chars and metallurgical cokes are considered to result from the difference in the time-temperature history between the raw injectant coal and the metallurgical coke and may lay the basis for differentiation between metallurgical coke fines and coal char residues present in the dust carried over the top of the blast furnace. 41 refs., 17 figs., 3 tabs.

Optical nano artifact metrics using silicon random nanostructures

Science.gov (United States)

Matsumoto, Tsutomu; Yoshida, Naoki; Nishio, Shumpei; Hoga, Morihisa; Ohyagi, Yasuyuki; Tate, Naoya; Naruse, Makoto

2016-08-01

Nano-artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, expensive and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension; our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.

Plasmonic and silicon spherical nanoparticle antireflective coatings

Science.gov (United States)

Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

2016-03-01

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

Silicon calorimetry for the SSC[ Superconducting Supercollider

International Nuclear Information System (INIS)

Bertrand, C.; Borchi, E.; Brau, J.E.

1989-01-01

SSC experiments will rely heavily on their calorimeters. Silicon calorimetry, which has been introduced in recent years as a useful technology, has many attractive characteristics which may make it a viable option for consideration. The many attractive properties of silicon detectors are reviewed. The relevant present day applications of large areas of silicon detectors are summarize to illustrate the emerging use. The troublesome issue of radiation damage in a high luminosity environment like the SSC is considered with a summary of much of the recent new measurements which help clarify this situation. A discussion of the electronics and a possible mechanical configuration is presented, followed by a summary of the outstanding R and D issues. 31 refs., 11 figs., 3 tabs

Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys.

Science.gov (United States)

Ibrahim, Mohamed F; Elgallad, Emad M; Valtierra, Salvador; Doty, Herbert W; Samuel, Fawzy H

2016-01-27

The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be), where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS) of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150-200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al₄SrSi₂, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt%) Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys

Directory of Open Access Journals (Sweden)

Mohamed F. Ibrahim

2016-01-01

Full Text Available The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be, where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150–200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al4SrSi2, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt% Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

Fabrication of silicon condenser microphones using single wafer technology

NARCIS (Netherlands)

Scheeper, P.R.; van der Donk, A.G.H.; Olthuis, Wouter; Bergveld, Piet

1992-01-01

A condenser microphone design that can be fabricated using the sacrificial layer technique is proposed and tested. The microphone backplate is a 1-¿m plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride film with a high density of acoustic holes (120-525 holes/mm2), covered with a thin

Silicon Nanowires for All-Optical Signal Processing in Optical Communication

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2012-01-01

Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

Technological development for super-high efficiency solar cells. Technological development of solar-high efficiency singlecrystalline silicon solar cells (high quality singlecrystalline silicon substrates); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (kohinshitsu tankessho silicon kiban no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development for high quality efficiency singlecrystalline silicon substrates in fiscal 1994. (1) On electromagnetic casting/once FZ bath method, a Si single crystal of 600mm long was successfully obtained by improvement of power source frequency and furnace parts. High carbon content resulted in no single crystal including solids. In undoped electromagnetic casting ingots, resistivities over 1500ohm-cm were obtained because of effective preventive measures from contaminants. (2) On electromagnetic melting CZ method, since vibration and temperature control of melt surface by magnetic shield was insufficient for stable pulling of single crystals, its practical use was hopeless. (3) On electron beam melting CZ method, a Si single crystal of 25mm in diameter was obtained by preventive measures from evaporation of Si and influence of deposits, and improved uniform deposition distribution in a furnace. The oscillation circuit constant of power source, and water-cooling copper crucible structure were also analyzed for the optimum design of electromagnetic melting furnaces. 3 figs., 1 tab.

Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

Science.gov (United States)

Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

2011-12-01

The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

International Nuclear Information System (INIS)

Koch, F; Brinkmann, J; Lindig, S; Mishra, T P; Linsmeier, Ch

2011-01-01

The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application.

Science.gov (United States)

Ma, Zhibo; Wang, Yinan; Shen, Qiang; Zhang, Han; Guo, Xuetao

2018-04-17

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

Science.gov (United States)

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Hanna V. Bandarenka

2018-05-01

Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Micro-spectroscopy on silicon wafers and solar cells

Directory of Open Access Journals (Sweden)

Gundel Paul

2011-01-01

Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

Casting Technology.

Science.gov (United States)

Wright, Michael D.; And Others

1992-01-01

Three articles discuss (1) casting technology as it relates to industry, with comparisons of shell casting, shell molding, and die casting; (2) evaporative pattern casting for metals; and (3) high technological casting with silicone rubber. (JOW)

Nuclear methods on service of mountain manufacture Navoi Mining-Metallurgical complex

International Nuclear Information System (INIS)

Kucherskiy, N.I.

2004-01-01

Full text: On a number of the major minerals, such as gold, uranium, copper, tungsten, potash salts, phosphorites, caolines, etc. Uzbekistan on the confirmed stocks and predicted resources occupies leading places among the states of the world. The basic deposits of gold and uranium are concentrated in Central-Kysylkum region, which is field of activity of Navoi mining-metallurgical combine. In industrial divisions of the combine, located in five areas of republic about 60000 persons are engaged. At all stages of manufacture of gold (since investigation) analytical maintenance has extremely important role. In NMMC radioanalytical methods are widely used, in particular, on mine 'Muruntau' the unique gamma-activation analysis laboratory has been constructed and entered into operation. For the period of operation of laboratory, i.e. since 1977, it is executed more than nine millions analyses of geological tests with extremely high expressness (about tens seconds). It is used x-ray-radiometric method for large-portion (by dumper) sortings and on lumpy separation of ores. With the help of high-sensitivity radiometric means of measurements it is possible to develop phosphorites for reception of phosphoric fertilizers. Nuclear-physical methods are applied to the decision of other problems. Thus, due to application of nuclear-physical methods of the operative control of technological processes of mining manufacture, quality management of ores, the account of quantity of products of extraction and their preliminary enrichment, the actual problem - increase in profitability of all mining manufacture NMMC is solved

Hybrid III-V Silicon Lasers

Science.gov (United States)

Bowers, John

2014-03-01

Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

Silicon and Civilization,

Science.gov (United States)

1980-11-04

of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

Science.gov (United States)

Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

2001-04-01

We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

Silicon Carbide Corrugated Mirrors for Space Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

Science.gov (United States)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

A review of oxide, silicon nitride, and silicon carbide brazing

International Nuclear Information System (INIS)

Santella, M.L.; Moorhead, A.J.

1987-01-01

There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

Techniques for hot embossing microstructures on liquid silicone rubbers with fillers

DEFF Research Database (Denmark)

Vudayagiri, Sindhu; Yu, Liyun; Skov, Anne Ladegaard

2015-01-01

Embossing is an established process for the thermoplastic elastomers but not yet for the thermosetting elastomers. It has already been shown that hot embossing is a viable technology for imprinting microstructures in addition to curing thin silicone films at their gel point. It is one of the simp......Embossing is an established process for the thermoplastic elastomers but not yet for the thermosetting elastomers. It has already been shown that hot embossing is a viable technology for imprinting microstructures in addition to curing thin silicone films at their gel point. It is one...

First human hNT neurons patterned on parylene-C/silicon dioxide substrates: Combining an accessible cell line and robust patterning technology for the study of the pathological adult human brain.

Science.gov (United States)

Unsworth, C P; Graham, E S; Delivopoulos, E; Dragunow, M; Murray, A F

2010-12-15

In this communication, we describe a new method which has enabled the first patterning of human neurons (derived from the human teratocarcinoma cell line (hNT)) on parylene-C/silicon dioxide substrates. We reveal the details of the nanofabrication processes, cell differentiation and culturing protocols necessary to successfully pattern hNT neurons which are each key aspects of this new method. The benefits in patterning human neurons on silicon chip using an accessible cell line and robust patterning technology are of widespread value. Thus, using a combined technology such as this will facilitate the detailed study of the pathological human brain at both the single cell and network level. Copyright © 2010 Elsevier B.V. All rights reserved.

Powder metallurgical high performance materials. Proceedings. Volume 4: late papers

Energy Technology Data Exchange (ETDEWEB)

Kneringer, G; Roedhammer, P; Wildner, H [eds.

2001-07-01

This is the fourth volume (late papers) of the 15th International Plansee seminar 2001 which general theme was 'Powder metallurgical high performance materials'. The seminar looked beyond the refractory metals and cemented carbides, which remain as its focus, to novel classes of materials, such as intermetallic compounds, with potential for high temperature applications. This volume 4 contains papers dealing with high performance P/M metals (ITER and fusion reactors, solid targets, materials microstructure, novel alloys, etc.), P/M hard materials ( production and characterization, tungsten carbides, titanium carbides, microstructural design, coatings composition and performance, etc.) and general topics. From 37 papers 24 correspond to INIS subject scope and they were indexed separately. (nevyjel)

Characterization of Nanocarbon Copper Composites Manufactured in Metallurgical Synthesis Process

Science.gov (United States)

Knych, Tadeusz; Kwaśniewski, Paweł; Kiesiewicz, Grzegorz; Mamala, Andrzej; Kawecki, Artur; Smyrak, Beata

2014-08-01

Currently, there is a worldwide search for new forms of materials with properties that are significantly improved in comparison to materials currently in use. One promising research direction lies in the synthesis of metals containing modern carbon materials ( e.g., graphene, nanotubes). In this article, the research results of metallurgical synthesis of a mixture of copper and two different kinds of carbon (activated carbon and multiwall carbon nanotubes) are shown. Samples of copper-carbon nanocomposite were synthesized by simultaneously exposing molten copper to an electrical current while vigorously stirring and adding carbon while under an inert gas atmosphere. The article contains research results of density, hardness, electrical conductivity, structure (TEM), and carbon decomposition (SIMS method) for the obtained materials.

Powder metallurgical high performance materials. Proceedings. Volume 4: late papers

International Nuclear Information System (INIS)

Kneringer, G.; Roedhammer, P.; Wildner, H.

2001-01-01

This is the fourth volume (late papers) of the 15th International Plansee seminar 2001 which general theme was 'Powder metallurgical high performance materials'. The seminar looked beyond the refractory metals and cemented carbides, which remain as its focus, to novel classes of materials, such as intermetallic compounds, with potential for high temperature applications. This volume 4 contains papers dealing with high performance P/M metals (ITER and fusion reactors, solid targets, materials microstructure, novel alloys, etc.), P/M hard materials ( production and characterization, tungsten carbides, titanium carbides, microstructural design, coatings composition and performance, etc.) and general topics. From 37 papers 24 correspond to INIS subject scope and they were indexed separately. (nevyjel)

Optimization Review: Bunker Hill Mining and Metallurgical Complex Superfund Site, Central Treatment Plant (CTP), Kellogg, Shoshone County, Idaho

Science.gov (United States)

The Bunker Hill Mining and Metallurgical Complex Superfund Site includes all areas of the Coeur d’Alene Basin where mining-related contamination occurred and encompasses a 21-square mile “Box” along Interstate 90 surrounding the former smelter complex.

Towards hybrid heterojunction silicon solar cells with organic charge carrier selective contacts

OpenAIRE

Jäckle, Sara Lisa

2017-01-01

Photovoltaic is an essential part of the needed global transition towards renewable energies. Even though many materials have good absorption and energy conversion properties, the market is dominated by technologies based on crystalline silicon. Silicon has the advantage of being neither toxic nor rare on earth and it is very well investigated due to its extensive use in microelectronics. The best power conversion efficiencies of silicon solar cells and modules are achieved by sophisticated d...

THE MODELS OF THE MANAGEMENT OPTIMIZATION OF THE ORGANIZATIONAL STRUCTURES OF RUP “BELORUSSIAN METALLURGICAL WORKS”

Directory of Open Access Journals (Sweden)

A. N. Chichko

2006-01-01

Full Text Available The new approach to the mathematic modeling and optimization of interrelation of the control units of the metallurgical enterprise organizational structures is offered. The mathematical model of the organizational structure based on temporary characteristics of control units loading is offered at the example of one of the organizational structures BMZ.

Materials of construction for silicon crystal growth

Science.gov (United States)

Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

1980-01-01

The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

Research and Application Progress of Silicone Rubber Materials in Aviation

Directory of Open Access Journals (Sweden)

HUANG Yanhua

2016-06-01

Full Text Available The research progress of heat resistance, cold resistance, electrical conductivity and damping properties of aviation silicone rubber were reviewed in this article. The heat resistance properties of silicone rubber can be enhanced by changing the molecular structure (main chain, end-group, side chain and molecular weight of the gum and adding special heat-resistance filler. The cold resistance of aviation silicone rubber can be enhanced by adjusting the side chain molecular structure of the gum and the content of different gum chain. The electrical conductivity of silicone rubber can be improved by optimizing, blending and dispersing of conductive particles. The damping property of silicone rubber can be improved by designing and synthesizing of high-molecular polysiloxane damping agent. Furthermore, the application of aviation silicone rubber used in high-low temperature seal, electrical conduction and vibration damping technology are also summarized, and the high performance (for example long-term high temperature resistance, ultralow temperature resistance, high electromagnetic shelding, long-term fatigue resistance vibration damping, quasi constant modulus and so on of special silicone rubber is the future direction of aviation silicone rubber.

Cryogenic treatment of steel: from concept to metallurgical understanding

DEFF Research Database (Denmark)

Villa, Matteo; Somers, Marcel A. J.

2017-01-01

, the metallurgical understanding of the microstructural changes involved in cryogenic treatment of steel has remained poor. It is believed that the improvement in wear resistance is promoted by an enhanced precipitation of carbides during tempering, but no explanation has been given as to how this enhanced......Subjecting steel to cryogenic treatment to improve its properties was conceived in the 30ies of the previous century. The proof of concept that properties, in particular wear resistance, can indeed be improved importantly, was reported in the next decades. Despite many investigations...... precipitation can be obtained. In the last six years, the authors have applied in situ magnetometry, synchrotron X-Ray Diffraction and dilatometry to enlighten the phase transitions occurring in steels at cryogenic temperatures and to point out the connection between different treatment parameters...

Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

CERN Document Server

Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

2006-01-01

The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

FINDING WAYS OF RECYCLING DUST OF ARC STEEL FURNACES AT THE BELARUSIAN METALLURGIC PLANT

Directory of Open Access Journals (Sweden)

A. V. Demin

2015-01-01

Full Text Available The first part examines the theoretical possibility of recycling dust of arc steel furnaces. The different modes of dust disposal depending on the task of recycling are discussed: recycling at minimal cost; recycling with a maximum extraction of iron; recycling with maximum extraction of zinc. The results of laboratory studies providing information on the technical feasibility of recycling dust formed at the Belarusian metallurgic plant are provided.

Investigations for decision making on an old tailing pond of a former experimental metallurgical plant

International Nuclear Information System (INIS)

Razikov, Z.A.; Pavljuk, L.M.; Bezzubov, N.I.

2002-01-01

Investigations are described on an abandoned tailing pond of a former experimental metallurgical plant which operated during the period 1945-1950. The aim of these investigations was to explore radiological hazards arising from the tailing pond for the population and to obtain data for decision making on redeployment or dumping of the pond. Methods used, results obtained and conclusions drawn are outlined. (author)

Silicon nanowire hot carrier electroluminescence

Energy Technology Data Exchange (ETDEWEB)

Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

2016-08-31

Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

Metallurgical Laboratory Hazardous Waste Management Facility groundwater monitoring report: Third quarter 1993

International Nuclear Information System (INIS)

1993-12-01

During third quarter 1993, samples from AMB groundwater monitoring wells at the Metallurgical Laboratory Hazardous Waste Management Facility were analyzed for certain heavy metals, indicator parameters, radionuclides, volatile organic compounds, and other constituents. Eight parameters exceeded standards during the quarter. As in previous quarters, tetrachloroethylene and trichloroethylene exceeded final Primary Drinking Water Standards; and aluminum, iron, lead, manganese, pH, and total organic halogens exceeded the Savannah River Site Flag 2 criteria in one or more of the wells. Groundwater flow direction and rate in the water-table unit were similar to previous quarters

Superconducting Super Collider silicon tracking subsystem research and development

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

1990-12-01

The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria