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Sample records for metal-oxide-semiconductor electron emitters

  1. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  2. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  3. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  4. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  5. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  6. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  7. Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

    2008-01-01

    The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

    Science.gov (United States)

    Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

    2014-07-16

    The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-01-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

  10. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  11. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  12. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    International Nuclear Information System (INIS)

    Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

    2008-01-01

    Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

  13. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  14. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  15. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  16. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  17. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  18. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  19. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  20. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  1. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  2. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  3. Electron Emission from Ultra-Large Area MOS Electron Emitters

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2009-01-01

    Ultralarge metal-oxide-semiconductor (MOS) devices with an active oxide area of 1 cm2 have been fabricated for use as electron emitters. The MOS structures consist of a Si substrate, a SiO2 tunnel barrier (~5 nm), a Ti wetting layer (3–10 Å), and a Au top layer (5–60 nm). Electron emission from...... layer is varied from 3 to 10 Å which changes the emission efficiency by more than one order of magnitude. The apparent mean free path of ~5 eV electrons in Au is found to be 52 Å. Deposition of Cs on the Au film increased the electron emission efficiency to 4.3% at 4 V by lowering the work function....... Electron emission under high pressures (up to 2 bars) of Ar was observed. ©2009 American Vacuum Society...

  4. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    Science.gov (United States)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  5. Electron emission from MOS electron emitters with clean and cesium covered gold surface

    DEFF Research Database (Denmark)

    Nielsen, Gunver; Thomsen, Lasse Bjørchmar; Johansson, Martin

    2009-01-01

    MOS (metal-oxide-semiconductor) electron emitters consisting of a Si substrate, a SiO2 tunnel barrier and a Ti (1 nm)/Au(7 nm) top-electrode, with an active area of 1 cm(2) have been produced and studied with surface science techniques under UHV (ultra high vacuum) conditions and their emission...... characteristics have been investigated. It is known, that deposition of an alkali metal on the emitting surface lowers the work function and increases the emission efficiency. For increasing Cs coverages the surface has been characterized by X-ray Photoelectron Spectroscopy (XPS), Ion Scattering Spectroscopy (ISS...

  6. Electron Emitters

    National Research Council Canada - National Science Library

    Tzeng, Yonhua

    2002-01-01

    When two carbon-nanotube coated electrodes are placed at a small distance from each other, electron emission from carbon nanotubes allows a DC or AC electrical current to flow between these two electrodes...

  7. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  8. Positron studies of metal-oxide-semiconductor structures

    Science.gov (United States)

    Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-03-01

    Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

  9. Modelling of Leakage Current Through Double Dielectric Gate Stack in Metal Oxide Semiconductor Capacitor

    International Nuclear Information System (INIS)

    Fatimah A Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal

    2008-01-01

    In this paper, we have derived analytical expression of leakage current through double barriers in Metal Oxide Semiconductor (MOS) capacitor. Initially, electron transmittance through the MOS capacitor was derived by including the coupling between the transverse and longitudinal energies. The transmittance was then employed to obtain leakage current through the double barrier. In this model, we observed the effect of electron velocity due to the coupling effect and the oxide thickness to the leakage current. The calculated results showed that the leakage current decreases as the electron velocity increases. (author)

  10. Metal oxide semiconductors for dye degradation

    International Nuclear Information System (INIS)

    Adhikari, Sangeeta; Sarkar, Debasish

    2015-01-01

    Highlights: • Hydrothermal synthesis of monoclinic and hexagonal WO 3 nanostructures. • Nanocuboid and nanofiber growth using different structure directing agents. • WO 3 –ZnO nanocomposites for dye degradation under UV and visible light. • High photocatalytic efficiency is achieved by 10 wt% monoclinic WO 3 . • WO 3 assists to trap hole in UV and arrests electron in visible light irradiation. - Abstract: Organic contaminants are a growing threat to the environment that widely demands their degradation by high efficient photocatalysts. Thus, the proposed research work primely focuses on the efficient degradation of methyl orange using designed WO 3 –ZnO photocatalysts under both UV and visible light irradiation. Two different sets of WO 3 nanostructures namely, monoclinic WO 3 (m-WO 3 ) and hexagonal WO 3 (h-WO 3 ) synthesizes in presence of a different structure directing agents. A specific dispersion technique allows the intimate contact of as-synthesized WO 3 and ultra-violet active commercial ZnO photocatalyst in different weight variations. ZnO nanocrystal in presence of an optimum 10 wt% m-WO 3 shows a high degree of photocatalytic activity under both UV and visible light irradiation compared to counterpart h-WO 3 . Symmetrical monoclinic WO 3 assists to trap hole in UV, but electron arresting mechanism predominates in visible irradiation. Coupling of monoclinic nanocuboid WO 3 with ZnO proves to be a promising photocatalyst in both wavelengths.

  11. Metal oxide semiconductors for dye degradation

    Energy Technology Data Exchange (ETDEWEB)

    Adhikari, Sangeeta; Sarkar, Debasish, E-mail: dsarkar@nitrkl.ac.in

    2015-12-15

    Highlights: • Hydrothermal synthesis of monoclinic and hexagonal WO{sub 3} nanostructures. • Nanocuboid and nanofiber growth using different structure directing agents. • WO{sub 3}–ZnO nanocomposites for dye degradation under UV and visible light. • High photocatalytic efficiency is achieved by 10 wt% monoclinic WO{sub 3}. • WO{sub 3} assists to trap hole in UV and arrests electron in visible light irradiation. - Abstract: Organic contaminants are a growing threat to the environment that widely demands their degradation by high efficient photocatalysts. Thus, the proposed research work primely focuses on the efficient degradation of methyl orange using designed WO{sub 3}–ZnO photocatalysts under both UV and visible light irradiation. Two different sets of WO{sub 3} nanostructures namely, monoclinic WO{sub 3} (m-WO{sub 3}) and hexagonal WO{sub 3} (h-WO{sub 3}) synthesizes in presence of a different structure directing agents. A specific dispersion technique allows the intimate contact of as-synthesized WO{sub 3} and ultra-violet active commercial ZnO photocatalyst in different weight variations. ZnO nanocrystal in presence of an optimum 10 wt% m-WO{sub 3} shows a high degree of photocatalytic activity under both UV and visible light irradiation compared to counterpart h-WO{sub 3}. Symmetrical monoclinic WO{sub 3} assists to trap hole in UV, but electron arresting mechanism predominates in visible irradiation. Coupling of monoclinic nanocuboid WO{sub 3} with ZnO proves to be a promising photocatalyst in both wavelengths.

  12. Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

    International Nuclear Information System (INIS)

    Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

    2010-01-01

    Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

  13. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  14. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Science.gov (United States)

    Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

    2015-08-12

    Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

  15. DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry

    International Nuclear Information System (INIS)

    Chen, Chia-Ling; Yang, Chih-Feng; Dokmeci, Mehmet R; Agarwal, Vinay; Sonkusale, Sameer; Kim, Taehoon; Busnaina, Ahmed; Chen, Michelle

    2010-01-01

    We present integration of single-stranded DNA (ss-DNA)-decorated single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry as nanoscale chemical sensors. SWNTs were assembled onto CMOS circuitry via a low voltage dielectrophoretic (DEP) process. Besides, bare SWNTs are reported to be sensitive to various chemicals, and functionalization of SWNTs with biomolecular complexes further enhances the sensing specificity and sensitivity. After decorating ss-DNA on SWNTs, we have found that the sensing response of the gas sensor was enhanced (up to ∼ 300% and ∼ 250% for methanol vapor and isopropanol alcohol vapor, respectively) compared with bare SWNTs. The SWNTs coupled with ss-DNA and their integration on CMOS circuitry demonstrates a step towards realizing ultra-sensitive electronic nose applications.

  16. Low emittance electron storage rings

    Science.gov (United States)

    Levichev, E. B.

    2018-01-01

    Low-emittance electron (positron) beams are essential for synchrotron light sources, linear collider damping rings, and circular Crab Waist colliders. In this review, the principles and methods of emittance minimization are discussed, prospects for developing relativistic electron storage rings with small beam phase volume are assessed, and problems related to emittance minimization are examined together with their possible solutions. The special features and engineering implementation aspects of various facilities are briefly reviewed.

  17. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  18. Diamondoid monolayers as electron emitters

    Science.gov (United States)

    Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

    2012-04-10

    Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

  19. Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

    Science.gov (United States)

    Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

    2017-05-24

    Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior of perovskites, we constructed metal-oxide-semiconductor (MOS) capacitors based on perovskite films and performed capacitance-voltage (C-V) and current-voltage (I-V) measurements of the capacitors. The results provide direct evidence for the mixed ionic-electronic transport behavior within perovskite films. In the dark, there is electrical hysteresis in both the C-V and I-V curves because the mobile negative ions take part in charge transport despite frequency modulation. However, under illumination, the large amount of photoexcited free carriers screens the influence of the mobile ions with a low concentration, which is responsible for the normal C-V properties. Validation of ion migration for the gate-control ability of MOS capacitors is also helpful for the investigation of perovskite MOS transistors and other gate-control photovoltaic devices.

  20. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    Science.gov (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2015-06-15

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  2. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

    Science.gov (United States)

    Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

    2017-05-02

    Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

  3. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

    2002-01-01

    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  4. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Kutbee, Arwa T.; Ghodsi Nasseri, Seyed Faizelldin; Bersuker, G.; Hussain, Muhammad Mustafa

    2014-01-01

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect

  5. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

    International Nuclear Information System (INIS)

    Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

    2014-01-01

    Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

    Science.gov (United States)

    Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

    2015-12-01

    Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

  7. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

    International Nuclear Information System (INIS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-01-01

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

  8. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  9. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.

    2015-01-01

    reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization

  10. A new metallic oxide semiconductor field effect transistor detector for use of in vivo dosimetry

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Kang Dehua; Anatoly Rosenfeld

    2006-01-01

    Objective: To investigate the application of a recently developed metallic oxide semiconductor field effect transistor (MOSFET) detector for use in vivo dosimetry. Methods: The MOSFET detector was calibrated for X-ray beams of 8 MV and 15 MV, as well as electron beams with energy of 6,8,12 and 18 MeV. The dose linearity of the MOSFET detector was investigated for the doses ranging from 0 up to 50 Gy using 8 MV X-ray beams. Angular effect was evaluated as well in a cylindrical PMMA phantom by changing the beam entrance angle every 15 degree clockwise. The MOSFET detector was then used for a breast cancer patient in vivo dose measurement, after the treatment plan was verified in a water phantom using a NE-2571 ion chamber, in vivo measurements were performed in the first and last treatment, and once per week during the whole treatment. The measured doses were then compared with planning dose to evaluate the accuracy of each treatment. Results: The MOSFET detector represented a good energy response for X-ray beams of 8 MV and 15 MV, and for electron beams with energy of 6 MeV up to 18 MeV. With the 6 V bias, Dose linearity error of the MOSFET detector was within 3.0% up to approximately 50 Gy, which can be significantly reduced to 1% when the detector was calibrated before and after each measurement. The MOSFET response varied within 1.5% for angles from 270 degree to 90 degree. However, maximum error of 10.0% was recorded comparing MOSFET response between forward and backward direction. In vivo measurement for a breast cancer patient using 3DCRT showed that, the average dose deviation between measurement and calculation was 2.8%, and the maximum error was less then 5.0%. Conclusions: The new MOSFET detector, with its advantages of being in size, easy use, good energy response and dose linearity, can be used for in vivo dose measurement. (authors)

  11. A device for electron gun emittance measurement

    International Nuclear Information System (INIS)

    Aune, B.; Corveller, P.; Jablonka, M.; Joly, J.M.

    1985-05-01

    In order to improve the final emittance of the beam delivered by the ALS electron linac a new gun is going to be installed. To measure its emittance and evaluate the contribution of different factors to emittance growth we have developed an emittance measurement device. We describe the experimental and mathematical procedure we have followed, and give some results of measurements

  12. Radiation effects in metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Collins, J.L.

    1987-01-01

    The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

  13. Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures

    Science.gov (United States)

    Asoka-Kumar, P.; Leung, T. C.; Lynn, K. G.; Nielsen, B.; Forcier, M. P.; Weinberg, Z. A.; Rubloff, G. W.

    1992-06-01

    The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.

  14. Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Leung, T.C.; Lynn, K.G.; Nielsen, B.; Forcier, M.P.; Weinberg, Z.A.; Rubloff, G.W.

    1992-01-01

    The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions

  15. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.

    2000-01-01

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n ++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. (c) 2000 American Institute of Physics

  16. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    DEFF Research Database (Denmark)

    Forsén, Esko Sebastian; Abadal, G.; Ghatnekar-Nilsson, S.

    2005-01-01

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions...... and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic...

  17. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Science.gov (United States)

    Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

    2018-05-01

    The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

  18. Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

    Science.gov (United States)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

    2015-10-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  19. Magnetotransport investigations of the two-dimensional metallic state in silicon metal-oxid-semiconductor structures

    International Nuclear Information System (INIS)

    Prinz, A.

    2002-03-01

    For more than two decades it was the predominant view among the physical community that the every two-dimensional (2D) disordered electron system becomes insulating as the temperature approaches the absolute zero temperature (0 Kelvin or -273.15 o C). Two-dimensional means that the movement of the charge carriers is confined in one direction by a potential so that the carriers can move freely only perpendicular to the confinement. The most famous physical realization of a 2D system is the silicon metal-oxide-semiconductor field effect transistor (Si-MOSFET). It is one of the basic elements of most electronic devices in our daily life. The working principle is very simple. Charges are attracted to the semiconductor-oxide interface by an electric field applied between the metallic gate and the semiconductor, so that a 2D conductive channel is formed. The charge density can be adjusted by the voltage from zero up to 10 13 cm -2 . In 1994 Kravchenko and coworkers made a very important discovery. They studied high mobility Si-MOSFETs and found that for densities below a certain critical value, nc, the resistivity increases as the temperature is decreased below 2 K, whereas for densities above $n c $ the resistivity decreases unexpectedly. The transition from insulating to metallic behavior, known as metal-insulator transition (MIT), was obviously a contradiction to the commonly accepted theories which predict insulating behavior for any density. The insulating behavior is a consequence of the wave properties of electrons which leads to interference in disordered media and thus to enhanced backscattering. In the subsequent years, experimental studies were performed on a variety of 2D systems, which qualitatively showed a similar behavior. All the investigated samples had one thing in common. The interaction energy between the carriers was considerable higher than their mean kinetic energy due to their movement in the 2D plane. Since the electron-electron interaction was

  20. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  1. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  2. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  3. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Directory of Open Access Journals (Sweden)

    Tharun Konduru

    2015-01-01

    Full Text Available A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone, acetonitrile (nitrile, ethyl acetate (ester, and ethanol (alcohol. The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm of methlypropyl sulfide and two concentrations (145 and 1452 ppm of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  4. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  5. High current plasma electron emitter

    International Nuclear Information System (INIS)

    Fiksel, G.; Almagri, A.F.; Craig, D.

    1995-07-01

    A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

  6. Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

    Science.gov (United States)

    Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

    1993-12-01

    The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

  7. Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

    Science.gov (United States)

    Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

    2017-10-01

    Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

  8. Dimensional optimization of nanowire--complementary metal oxide--semiconductor inverter.

    Science.gov (United States)

    Hashim, Yasir; Sidek, Othman

    2013-01-01

    This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.

  9. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    International Nuclear Information System (INIS)

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  10. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  11. Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

    International Nuclear Information System (INIS)

    Fadida, S.; Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.

    2014-01-01

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al 2 O 3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  12. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  13. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    International Nuclear Information System (INIS)

    Yuan, Yang; Yong, Gao; Peng-Liang, Gong

    2008-01-01

    A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  15. The effect of body bias of the metal-oxide-semiconductor field-effect transistor in the resistive network on spatial current distribution in a bio-inspired complementary metal-oxide-semiconductor vision chip

    Science.gov (United States)

    Kong, Jae-Sung; Hyun, Hyo-Young; Seo, Sang-Ho; Shin, Jang-Kyoo

    2008-11-01

    Complementary metal-oxide-semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal-oxide-semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160 × 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

  16. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    Science.gov (United States)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  17. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    Science.gov (United States)

    Leung, T. C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-01-01

    Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.

  18. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    International Nuclear Information System (INIS)

    Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1993-01-01

    Studies of SiO 2 -Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO 2 -Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown

  19. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

    Science.gov (United States)

    Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

    2009-12-15

    Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

  20. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  1. Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

    Science.gov (United States)

    Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

    2018-01-01

    This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

  2. Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

    Science.gov (United States)

    Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

    2006-04-01

    The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

  3. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  4. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Javier Burgués

    2018-01-01

    Full Text Available Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA sensors were exposed to low concentrations of carbon monoxide (0–9 ppm with environmental conditions, such as ambient humidity (15–75% relative humidity and temperature (21–27 °C, varying within the indicated ranges. Partial Least Squares (PLS models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm. Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm. The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate

  5. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Burgués, Javier; Marco, Santiago

    2018-01-25

    Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher

  6. Low emittance thermionic electron guns

    International Nuclear Information System (INIS)

    Herrmannsfeldt, W.B.

    1989-01-01

    The author discusses self-field effects and external field effects for electron guns. He also discusses designs of electron guns and their uses in electron cooling systems and as an injector for electrostatic free electron lasers. He closes by looking at electron guns for linear accelerators. 20 references, 3 figures

  7. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  8. Electron emitter pulsed-type cylindrical IEC

    International Nuclear Information System (INIS)

    Miley, G.H.; Gu, Y.; Stubbers, R.; Zich, R.; Anderl, R.; Hartwell, J.

    1997-01-01

    A cylindrical version of the single grid Inertial Electrostatic Confinement (IEC) device (termed the C-device) has been developed for use as a 2.5-MeV D-D fusion neutron source for neutron activation analysis. The C-device employs a hollow-tube type cathode with similar anodes backed up by ''reflector'' dishes. The resulting discharge differs from a conventional hollow cathode discharge, by creating an explicit ion beam which is ''pinched'' in the cathode region. Resulting fusion reactions generate ∼10 6 neutron/s. A pulsed version is under development for applications requiring higher fluxes. Several pulsing techniques are under study, including an electron emitter (e-emitter) assisted discharge in a thorated tungsten wire emitter located behind a slotted area in the reflector dishes. Pulsing is initiated after establishing a low power steady-state discharge by pulsing the e-emitter current using a capacitor switch type circuit. The resulting electron jet, coupled with the discharge by the biased slot array, creates a strong pulse in the pinched ion beam. The pulse length/repetition rate are controlled by the e-emitter pulse circuit. Typical parameters in present studies are ∼30micros, 10Hz and 1-amp ion current. Corresponding neutron measurements are an In-foil type activation counter for time averaged rates. Results for a wide variety of operating conditions are presented

  9. Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

    Science.gov (United States)

    Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

    2013-06-01

    We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

  10. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-01-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  11. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

    2010-02-15

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  12. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Feigenbaum scenario in the dynamics of a metal-oxide semiconductor heterostructure under harmonic perturbation. Golden mean criticality

    International Nuclear Information System (INIS)

    Cristescu, C.P.; Mereu, B.; Stan, Cristina; Agop, M.

    2009-01-01

    Experimental investigations and theoretical analysis on the dynamics of a metal-oxide semiconductor heterostructure used as nonlinear capacity in a series RLC electric circuit are presented. A harmonic voltage perturbation can induce various nonlinear behaviours, particularly evolution to chaos by period doubling and torus destabilization. In this work we focus on the change in dynamics induced by a sinusoidal driving with constant frequency and variable amplitude. Theoretical treatment based on the microscopic mechanisms involved led us to a dynamic system with a piecewise behaviour. Consequently, a model consisting of a nonlinear oscillator described by a piecewise second order ordinary differential equation is proposed. This kind of treatment is required by the asymmetry in the behaviour of the metal-oxide semiconductor with respect to the polarization of the perturbing voltage. The dynamics of the theoretical model is in good agreement with the experimental results. A connection with El Naschie's E-infinity space-time is established based on the interpretation of our experimental results as evidence of the importance of the golden mean criticality in the microscopic world.

  14. A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

    Institute of Scientific and Technical Information of China (English)

    Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

    2011-01-01

    A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp),whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region,is proposed.The theoretical limit of its Ron,sp is deduced,the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated,and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained.Simulations show that the inhomogencous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET)has a superior “Ron,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of Ron,sp with the same BV).The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET.Its reverse recovery peak current,reverse recovery time and reverse recovery charge are about 50,80 and 40% of those of the superjunction MOSFET,respectively.

  15. A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

    International Nuclear Information System (INIS)

    Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

    2011-01-01

    A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R on,sp ), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R on,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R on,sp are investigated, and the optimized results with BV of 83 V and R on,sp of 54 mΩ·mm 2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior 'R on,sp /BV' trade-off to the conventional VDMOS (a 38% reduction of R on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R on,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively. (interdisciplinary physics and related areas of science and technology)

  16. Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

    Science.gov (United States)

    Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

    2018-01-01

    Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

  17. Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels

    Science.gov (United States)

    Grasby, T. J.; Parry, C. P.; Phillips, P. J.; McGregor, B. M.; Morris, , R. J. H.; Braithwaite, G.; Whall, T. E.; Parker, E. H. C.; Hammond, R.; Knights, A. P.; Coleman, P. G.

    1999-03-01

    Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V-1 s-1 for a sheet density of 6.2×1011 cm-2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal-oxide-semiconductor device fabrication.

  18. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  19. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

    2010-01-01

    This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Modular low-voltage electron emitters

    International Nuclear Information System (INIS)

    Berejka, Anthony J.

    2005-01-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

  1. Modular low-voltage electron emitters

    Science.gov (United States)

    Berejka, Anthony J.

    2005-12-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

  2. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  3. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    Science.gov (United States)

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. Copyright © 2015 Elsevier B.V. All rights reserved.

  4. Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

    International Nuclear Information System (INIS)

    Lee, Ja Bin; Kim, Ki Woong; Lee, Jun Seok; An, Gwang Guk; Hong, Jin Pyo

    2011-01-01

    Half-metallic Heusler material Co 2 FeAl 0.5 Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO 2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10 5 cycles and 10 9 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.

  5. Charge-flow structures as polymeric early-warning fire alarm devices. M.S. Thesis; [metal oxide semiconductors

    Science.gov (United States)

    Sechen, C. M.; Senturia, S. D.

    1977-01-01

    The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

  6. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Spathis, C.; Birbas, A.; Georgakopoulou, K.

    2015-01-01

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices

  7. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  8. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-07-18

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  9. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Spathis, C., E-mail: cspathis@ece.upatras.gr; Birbas, A.; Georgakopoulou, K. [Department of Electrical and Computer Engineering, University of Patras, Patras 26500 (Greece)

    2015-08-15

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

  10. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

  11. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  12. Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

    NARCIS (Netherlands)

    Koivisto, J.; Schulze, D.; Wolff, J.E.H.; Rottke, D.

    2014-01-01

    Objectives: The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Methods: Organ and effective

  13. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  14. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  15. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  16. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    International Nuclear Information System (INIS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-01

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs

  17. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Anh Khoa Augustin [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Pourtois, Geoffrey [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Department of Chemistry, Plasmant Research Group, University of Antwerp, B-2610 Wilrijk-Antwerp (Belgium); Agarwal, Tarun [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Department of Electrical Engineering, University of Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Afzalian, Aryan [TSMC, Kapeldreef 75, B-3001 Leuven (Belgium); Radu, Iuliana P. [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Houssa, Michel [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium)

    2016-01-25

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  18. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-01-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

  19. Plasma treatment for producing electron emitters

    Science.gov (United States)

    Coates, Don Mayo; Walter, Kevin Carl

    2001-01-01

    Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

  20. Properties and growth peculiarities of Si{sub 0.30}Ge{sub 0.70} stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hikavyy, A., E-mail: Andriy.Hikavyy@imec.be; Rosseel, E.; Kubicek, S.; Mannaert, G.; Favia, P.; Bender, H.; Loo, R.; Horiguchi, N.

    2016-03-01

    Integration of Si{sub 0.30}Ge{sub 0.70} in the Source/Drain (S/D) areas of metal oxide semiconductor transistors built according to 14 nm technological node rules has been shown. SiGe properties and growth peculiarities are presented and elaborated. In order to preserve the fin structures during a pre-epitaxy surface preparation, the H{sub 2} bake pressure had to be increased to 19,998 Pa at 800 °C. Influence of this bake on the Si recess in the S/D areas is presented. Excellent quality of both the raised and the embedded Si{sub 0.30}Ge{sub 0.70} was demonstrated by transmission electron microscopy inspections. Energy-dispersive X-ray spectroscopy measurement showed two stages of SiGe growth for the embedded case: first with a lower Ge content at the beginning of the deposition until the (111) facets are formed, and second with a higher Ge content which is governed by the growth on (111) planes. Nano-beam diffraction analysis showed that SiGe grown in the S/D areas of p-type metal-oxide-semiconductor field-effect transistor is fully elastically relaxed in the direction across the fin and partially strained along the fin. Finally, a strain accumulation effect in the chain of transistors has been observed. - Highlights: • Si{sub 0.30}Ge{sub 0.70} stressor has been implemented in the 14 nm technology node CMOS flow. • Embedded and raised variants have been investigated. • High Si{sub 0.30}Ge{sub 0.70} quality was confirmed. • Si{sub 0.30}Ge{sub 0.70} layer is elastically relaxed across the fin direction. • Partial stress presence and stress accumulation effect were observed.

  1. Low emittance lattices for electron storage rings revisited

    International Nuclear Information System (INIS)

    Trbojevic, D.; Courant, E.

    1994-01-01

    Conditions for the lowest possible emittance of the lattice for electron storage rings are obtained by a simplified analytical approach. Examples of electron storage lattices with minimum emittances are presented. A simple graphical presentation in the normalized dispersion space (Floquet's transformation) is used to illustrate the conditions and results

  2. Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Chen Hai-Feng; Guo Li-Xin; Zheng Pu-Yang; Dong Zhao; Zhang Qian

    2015-01-01

    Drain-modulated generation current I DMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of I DMG ascribes to the change of the Si surface potential φ s . This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as V D increases. The reason for this unconformity is that the drain-to-gate voltage V DG lessens φ s around the drain corner and controls the falling edge of the I DMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the I DMG falling edge is set up in which I DMG has an exponential attenuation relation with V DG . Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 mV = 3kT/q. This result fully shows the accuracy of the above mechanism. (paper)

  3. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  4. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  5. Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

    Science.gov (United States)

    Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

    2011-02-22

    Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

  6. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  7. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  8. Temperature Modulation with Specified Detection Point on Metal Oxide Semiconductor Gas Sensors for E-Nose Application

    Directory of Open Access Journals (Sweden)

    Arief SUDARMAJI

    2015-03-01

    Full Text Available Temperature modulation technique, some called dynamic measurement mode, on Metal-Oxide Semiconductor (MOS/MOX gas sensor has been widely observed and employed in many fields. We present its development, a Specified Detection Point (SDP on modulated sensing element of MOS sensor is applied which associated to its temperature modulation, temperature modulation-SDP so-named. We configured the rectangular modulation signal for MOS gas sensors (TGSs and FISs using PSOC CY8C28445-24PVXI (Programmable System on Chip which also functioned as acquisition unit and interface to a computer. Initial responses and selectivity evaluations were performed using statistical tool and Principal Component Analysis (PCA to differ sample gases (Toluene, Ethanol and Ammonia on dynamic chamber measurement under various frequencies (0.25 Hz, 1 Hz, 4 Hz and duty-cycles (25 %, 50 %, 75 %. We found that at lower frequency the response waveform of the sensors becomes more sloping and distinct, and selected modulations successfully increased the selectivity either on singular or array sensors rather than static temperature measurement.

  9. Evaluations of carbon nanotube field emitters for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Hitoshi, E-mail: nakahara@nagoya-u.jp [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2009-11-30

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I-V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6x10{sup 9} A/m{sup 2} sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  10. Evaluations of carbon nanotube field emitters for electron microscopy

    Science.gov (United States)

    Nakahara, Hitoshi; Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi

    2009-11-01

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I- V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6×109 A/m 2 sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  11. Modular Lego-Electronics

    KAUST Repository

    Shaikh, Sohail F.; Ghoneim, Mohamed T.; Bahabry, Rabab R.; Khan, Sherjeel M.; Hussain, Muhammad Mustafa

    2017-01-01

    . Here, a generic manufacturable method of converting state-of-the-art complementary metal oxide semiconductor-based ICs into modular Lego-electronics is shown with unique geometry that is physically identifiable to ease manufacturing and enhance

  12. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  13. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

    OpenAIRE

    Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-01-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc.,...

  14. Emittance measurements of the CLIO electron beam

    Science.gov (United States)

    Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

    1997-02-01

    We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

  15. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.

    2016-10-14

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  16. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.; Cordero, Marlon D.; Nassar, Joanna M.; Hanna, Amir; Kutbee, Arwa T.; Carreno, Armando Arpys Arevalo; Hussain, Muhammad Mustafa

    2016-01-01

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  17. Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

    Directory of Open Access Journals (Sweden)

    Khairurrijal khairurrijal

    2012-09-01

    Full Text Available In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.

  18. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  19. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

    Science.gov (United States)

    Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

    2017-07-19

    The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  20. Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Lu Jie; Lerch, Michael; Cutajar, Dean; Rosenfeld, Anatoly

    2007-01-01

    The feasibility of a recently designed metal-oxide-semiconductor field effect transistor (MOSFET) dosimetry system for dose verification of high dose rate (HDR) brachytherapy treatment planning was investigated. MOSFET detectors were calibrated with a 0.6 cm 3 NE-2571 Farmer-type ionization chamber in water. Key characteristics of the MOSFET detectors, such as the energy dependence, that will affect phantom measurements with HDR 192 Ir sources were measured. The MOSFET detector was then applied to verify the dosimetric accuracy of HDR brachytherapy treatments in a custom-made water phantom. Three MOSFET detectors were calibrated independently, with the calibration factors ranging from 0.187 to 0.215 cGy/mV. A distance dependent energy response was observed, significant within 2 cm from the source. The new MOSFET detector has a good reproducibility ( 2 =1). It was observed that the MOSFET detectors had a linear response to dose until the threshold voltage reached approximately 24 V for 192 Ir source measurements. Further comparison of phantom measurements using MOSFET detectors with dose calculations by a commercial treatment planning system for computed tomography-based brachytherapy treatment plans showed that the mean relative deviation was 2.2±0.2% for dose points 1 cm away from the source and 2.0±0.1% for dose points located 2 cm away. The percentage deviations between the measured doses and the planned doses were below 5% for all the measurements. The MOSFET detector, with its advantages of small physical size and ease of use, is a reliable tool for quality assurance of HDR brachytherapy. The phantom verification method described here is universal and can be applied to other HDR brachytherapy treatments

  1. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

    2014-11-14

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  2. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Jiangwei Liu

    2018-06-01

    Full Text Available Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond for metal-oxide-semiconductor (MOS capacitors and MOS field-effect transistors (MOSFETs is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD and sputtering deposition (SD techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

  3. Innovative energy efficient low-voltage electron beam emitters

    International Nuclear Information System (INIS)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-01-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates

  4. Innovative energy efficient low-voltage electron beam emitters

    Science.gov (United States)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-03-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.

  5. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

    Science.gov (United States)

    Nakazato, Kazuo

    2014-03-28

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

  6. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  7. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  8. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    Directory of Open Access Journals (Sweden)

    Maryam Siadat

    2009-11-01

    Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

  9. Device for the radiation centering at electron emitters

    International Nuclear Information System (INIS)

    Panzer, S.; Ardenne, T. von; Jessat, K.; Bahr, G.

    1985-01-01

    The invention has been directed at a device for a simplified and reliable centering of electron beams at electron emitters in particular for welding and thermal surface modifications. The electron beam has been focussed relatively to an electron-optical lens. A movable masked electron detector has been arranged at the electron beam deflection plane. The electron detector is connected with an electronic data evaluation equipment

  10. A compact electron gun using field emitter array

    International Nuclear Information System (INIS)

    Asakawa, M.R.; Ikeda, A.; Miyabe, N.; Yamaguchi, S.; Kusaba, M.; Tsunawaki, Y.

    2008-01-01

    A compact electron gun using field emitter array has been developed. With a simple triode configuration consisting of FEA, mid-electrode and anode electrode, the electron gun produces a parallel beam with a diameter of 0.5 mm. This electron gun is applicable for compact radiation sources such as Cherenkov free-electron lasers

  11. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  12. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    International Nuclear Information System (INIS)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

    2014-01-01

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic

  13. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

    2014-04-14

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

  14. Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

    Science.gov (United States)

    Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

    2016-07-01

    We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. © The Author(s) 2016.

  15. Modified theoretical minimum emittance lattice for an electron storage ring with extreme-low emittance

    Directory of Open Access Journals (Sweden)

    Yi Jiao

    2011-05-01

    Full Text Available In the continuing efforts to reduce the beam emittance of an electron storage ring composed of theoretical minimum emittance (TME lattice, down to a level of several tens of picometers, nonlinear dynamics grows to be a great challenge to the performance of the storage ring because of the strong sextupoles needed to compensate for its large global natural chomaticities coupled with its small average dispersion function. To help in dealing with the challenge of nonlinear optimization, we propose a novel variation of theoretical minimum emittance (TME lattice, named as “modified-TME” lattice, with minimal emittance about 3 times of the exact theoretical minimum, while with more compact layout, lower phase advance per cell, smaller natural chromaticities, and more relaxed optical functions than that in a TME cell, by using horizontally defocusing quadrupole closer to the dipole or simply combined-function dipole with horizontally defocusing gradient. We present approximate scaling formulas to describe the relationships of the design parameters in a modified-TME cell. The applications of modified-TME lattice in the PEP-X storage ring design are illustrated and the proposed lattice appears a good candidate for synchrotron radiation light source with extremely low emittance.

  16. Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tzu-Shun [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China)

    2015-11-01

    Highlights: • The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors. • The resulting homostructured ZnO-based MOSFETs operated at a reverse voltage of −6 V had a very low gate leakage current of 24 nA. • The associated I{sub DSS} and the g{sub m(max)} were 5.64 mA/mm and 1.31 mS/mm, respectively. - Abstract: The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10{sup 11} cm{sup −2} eV{sup −1}, and the complete pinch-off performance. The saturation drain–source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.

  17. Industrial application of electron sources with plasma emitters

    CERN Document Server

    Belyuk, S I; Rempe, N G

    2001-01-01

    Paper contains a description, operation, design and parameters of electron sources with plasma emitters. One presents examples of application of these sources as part of automated electron-beam welding lines. Paper describes application of such sources for electron-beam deposition of composite powders. Electron-beam deposition is used to rebuild worn out part and to increase strength of new parts of machines and tools. Paper presents some examples of rebuilding part and the advantages gained in this case

  18. Manipulating Conduction in Metal Oxide Semiconductors: Mechanism Investigation and Conductance Tuning in Doped Fe2O3 Hematite and Metal/Ga2O3/Metal Heterostructure

    Science.gov (United States)

    Zhao, Bo

    This study aims at understanding the fundamental mechanisms of conduction in several metal oxide semiconductors, namely alpha-Fe2O 3 and beta-Ga2O3, and how it could be tuned to desired values/states to enable a wide range of application. In the first effort, by adding Ti dopant, we successfully turned Fe2O3 from insulating to conductive by fabricated compositionally and structurally well-defined epitaxial alpha-(TixFe1-x)2 O3(0001) films for x ≤ 0.09. All films were grown by oxygen plasma assisted molecular beam epitaxy on Al2O3(0001) sapphire substrate with a buffer layer of Cr2O3 to relax the strain from lattice mismatch. Van der Pauw resistivity and Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm-3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V˙s. Such low mobility, unlike conventional band-conduction semiconductor, was attributed to hopping mechanism due to strong electron-phonon interaction in the lattice. More interestingly, conduction mechanism transitions from small-polaron hopping at higher temperatures to variable range hopping at lower temperatures with a transition temperature between 180 to 140 K. Consequently, by adding Ti dopant, conductive Fe 2O3 hematite thin films were achieved with a well-understood conducting mechanism that could guide further device application such as spin transistor and water splitting. In the case of Ga2O3, while having a band gap as high as 5 eV, they are usually conductive for commercially available samples due to unintentional Si doping. However, we discovered the conductance could be repeatedly switched between high resistance state and low resistance state when made into metal/Ga2O3 /metal heterostructure. However, to obtain well controlled switching process with consistent switching voltages and resistances, understanding switching mechanism is the key. In this study, we fabricated resistive switching devices utilizing a Ni/Ga2O3/Ir heterostructure. Bipolar

  19. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  20. The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Chang, A.C.K.; Ross, I.M.; Norris, D.J.; Cullis, A.G.; Tang, Y.T.; Cerrina, C.; Evans, A.G.R.

    2006-01-01

    In this study we have highlighted the effect of non-uniform channel layer growth by the direct correlation of the microstructure and electrical characteristics in state-of-the-art pseudomorphic Si/SiGe p-channel metal oxide semiconductor field effect transistor devices fabricated on Si. Two nominally identical sets of devices from adjacent locations of the same wafer were found to have radically different distributions in gate threshold voltages. Due to the close proximity and narrow gate length of the devices, focused ion beam milling was used to prepare a number of thin cross-sections from each of the two regions for subsequent analysis using transmission electron microscopy. It was found that devices from the region giving a very narrow range of gate threshold voltages exhibited a uniform microstructure in general agreement with the intended growth parameters. However, in the second region, which showed a large spread in the gate threshold voltages, profound anomalies in the microstructure were observed. These anomalies consisted of fluctuations in the quality and thickness of the SiGe strained layers. The non-uniform growth of the strained SiGe layer clearly accounted for the poorly controlled threshold voltages of these devices. The results emphasize the importance of good layer growth uniformity to ensure optimum device yield

  1. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Energy Technology Data Exchange (ETDEWEB)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  2. Emittance measurement for high-brightness electron guns

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kurihara, T.; Sato, I.; Asami, A.; Yamazaki, Y.; Otani, S.; Ishizawa, Y.

    1992-01-01

    An emittance measurement system based on a high-precision pepper-pot technique has been developed for electron guns with low emittance of around πmm-mrad. Electron guns with a 1 mmφ cathode, the material of which is impregnated tungsten or single-crystal lanthanum hexaboride (La 1-x Ce x )B 6 , have been developed. The performance has been evaluated by putting stress on cathode roughness, which gives rise to an angular divergence, according to the precise emittance measurement system. A new type of cathode holder, which is a modified version of the so called Vogel type, was developed and the beam uniformity has been improved. (Author) 5 figs., tab., 9 refs

  3. Auger electron emitters: Insights gained from in vitro experiments

    International Nuclear Information System (INIS)

    Makrigiorgos, G.; Adelstein, S.J.; Kassis, A.I.

    1990-01-01

    This paper outlines the evolution of the current rationale for research into the biological effects of tissue-incorporated Auger electron emitters. The first section is a brief review of the research conducted by several groups in the last fifteen years. The second section describes the in vitro model used in our studies, dosimetric calculations, experimental techniques and recent findings. The third section focuses on the use of Auger electron emitters as in vitro microprobes for the investigation of the radiosensitivity of distinct subcellular components. Examination of the biological effects of the Auger electron emitter 125 I located in different cellular compartments of a single cell line (V 79 hamster lung fibroblast) verifies that DNA is the critical cell structure for radiation damage and that the sensitive sites are of nanometer dimensions. The data from incorporation of several Auger electron emitters at the same location within DNA suggest that there are no saturation effects from the decay of these isotopes (i.e. all the emitted energy is biologically effective) and provide some insight into which of the numerous physical mechanisms accompanying the Auger decay are most important in causing cell damage. Finally the implications of Auger electron emission for radiotherapy and radiation protection in diagnostic nuclear medicine are detailed and further research possibilities are suggested. (orig.)

  4. Nanodiamond composite as a material for cold electron emitters

    International Nuclear Information System (INIS)

    Arkhipov, A V; Sominski, G G; Uvarov, A A; Gordeev, S K; Korchagina, S B

    2008-01-01

    Characteristics of field-induced electron emission were investigated for one of newly designed all-carbon materials - nanodiamond composite (NDC). The composite is comprised by 4-6 nm diamond grains covered with 0.2-1 nm-thick graphite-like shells that merge at grain junctions and determine such properties as mechanical strength and high electric conductivity. Large number of uniformly distributed sp 3 -sp 2 interfaces allowed to expect enhanced electron emission in electric field. Combination of these features makes NDC a promising material for cold electron emitters in various applications. Experimental testing confirmed high efficiency of electron emission from NDC. In comparison with previousely tested forms of nanocarbon, NDC emitters demonstrated better stabily and tolerance to performance conditions. Unusual activation scenarios and thermal dependencies of emission characteristics observed in experiments with NDC can add new background for explanation of facilitated electron emission from nanocarbons with relatively 'smooth' surface morphology

  5. Nanodiamond composite as a material for cold electron emitters

    Energy Technology Data Exchange (ETDEWEB)

    Arkhipov, A V; Sominski, G G; Uvarov, A A [St.Petersburg State Polytechnic University, 29 Politchnicheskaya, St.Petersburg, 195251 (Russian Federation); Gordeev, S K; Korchagina, S B [FSUE ' Central Research Institute for Materials' , 8 Paradnaya Street, St.Petersburg, 191014 (Russian Federation)], E-mail: arkhipov@rphf.spbstu.ru

    2008-03-15

    Characteristics of field-induced electron emission were investigated for one of newly designed all-carbon materials - nanodiamond composite (NDC). The composite is comprised by 4-6 nm diamond grains covered with 0.2-1 nm-thick graphite-like shells that merge at grain junctions and determine such properties as mechanical strength and high electric conductivity. Large number of uniformly distributed sp{sup 3}-sp{sup 2} interfaces allowed to expect enhanced electron emission in electric field. Combination of these features makes NDC a promising material for cold electron emitters in various applications. Experimental testing confirmed high efficiency of electron emission from NDC. In comparison with previousely tested forms of nanocarbon, NDC emitters demonstrated better stabily and tolerance to performance conditions. Unusual activation scenarios and thermal dependencies of emission characteristics observed in experiments with NDC can add new background for explanation of facilitated electron emission from nanocarbons with relatively 'smooth' surface morphology.

  6. Emittance growth in laser-driven RF electron guns

    International Nuclear Information System (INIS)

    Kim, K.J.

    1989-01-01

    A simple analysis for the evolution of the electron-beam phase space distribution in laser-driven rf guns is presented. In particular, formulas are derived for the transverse and longitudinal emittances at the exit of the gun. The results are compared and found to agree well with those from simulation. (Author). 9 refs.; 4 figs

  7. RF emittance in a low energy electron linear accelerator

    Science.gov (United States)

    Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

    2018-04-01

    Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

  8. Emittance Measurements from a Laser Driven Electron Injector

    Energy Technology Data Exchange (ETDEWEB)

    Reis, David A

    2003-07-28

    The Gun Test Facility (GTF) at the Stanford Linear Accelerator Center was constructed to develop an appropriate electron beam suitable for driving a short wavelength free electron laser (FEL) such as the proposed Linac Coherent Light Source (LCLS). For operation at a wavelength of 1.5 {angstrom}, the LCLS requires an electron injector that can produce an electron beam with approximately 1 {pi} mm-mrad normalized rms emittance with at least 1 nC of charge in a 10 ps or shorter bunch. The GTF consists of a photocathode rf gun, emittance-compensation solenoid, 3 m linear accelerator (linac), drive laser, and diagnostics to measure the beam. The rf gun is a symmetrized 1.6 cell, s-band high gradient, room temperature, photocathode structure. Simulations show that this gun when driven by a temporally and spatially shaped drive laser, appropriately focused with the solenoid, and further accelerated in linac can produce a beam that meets the LCLS requirements. This thesis describes the initial characterization of the laser and electron beam at the GTF. A convolved measurement of the relative timing between the laser and the rf phase in the gun shows that the jitter is less than 2.5 ps rms. Emittance measurements of the electron beam at 35 MeV are reported as a function of the (Gaussian) pulse length and transverse profile of the laser as well as the charge of the electron beam at constant phase and gradient in both the gun and linac. At 1 nC the emittance was found to be {approx} 13 {pi} mm-mrad for 5 ps and 8 ps long laser pulses. At 0.5 nC the measured emittance decreased approximately 20% in the 5 ps case and 40% in the 8 ps case. These measurements are between 40-80% higher than simulations for similar experimental conditions. In addition, the thermal emittance of the electron beam was measured to be 0.5 {pi} mm-mrad.

  9. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    Science.gov (United States)

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

  10. A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems

    Science.gov (United States)

    Tanoi, Satoru; Endoh, Tetsuo

    2012-04-01

    A wide-range tunable level-keeper using vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (VDD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V VDD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

  11. Non-Stoichiometric SixN Metal-Oxide-Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate

    Science.gov (United States)

    Matsumoto, Mari; Ohba, Ryuji; Yasuda, Shin-ichi; Uchida, Ken; Tanamoto, Tetsufumi; Fujita, Shinobu

    2008-08-01

    The demand for random numbers for security applications is increasing. A conventional random number generator using thermal noise can generate unpredictable high-quality random numbers, but the circuit is extremely large because of large amplifier circuit for a small thermal signal. On the other hand, a pseudo-random number generator is small but the quality of randomness is bad. For a small circuit and a high quality of randomness, we purpose a non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor (MOSFET) noise source device. This device generates a very large noise signal without an amplifier circuit. As a result, it is shown that, utilizing a SiN MOSFET, we can attain a compact random number generator with a high generation rate near 1 Mbit/s, which is suitable for almost all security applications.

  12. A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Park, Mun-Soo; Na, Inmook; Wie, Chu R.

    2005-01-01

    n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

  13. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  14. Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Şadan Özden

    2016-01-01

    Full Text Available Deposition of poly(4-vinyl phenol insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol/p-GaAs metal-oxide-semiconductor (MOS structure. Temperature was set to 80–320 K while the current-voltage (I-V characteristics of the structure were examined in the study. Ideality factor (n and barrier height (ϕb values found in the experiment ranged from 3.13 and 0.616 eV (320 K to 11.56 and 0.147 eV (80 K. Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.

  15. Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

    2015-11-28

    An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

  16. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    Energy Technology Data Exchange (ETDEWEB)

    Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-14

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

  17. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Science.gov (United States)

    Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2018-01-01

    The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

  18. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    International Nuclear Information System (INIS)

    Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

    2015-01-01

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

  20. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  1. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  2. Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

    International Nuclear Information System (INIS)

    McWilliams, B.M.; Herman, I.P.; Mitlitsky, F.; Hyde, R.A.; Wood, L.L.

    1983-01-01

    A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-μm and 1-μm-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously

  3. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    International Nuclear Information System (INIS)

    Molina, J.; De La Hidalga, J.; Gutierrez, E.

    2014-01-01

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO 2 interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO 2 interface is of high quality so that Dit as low as ∼10 10  cm −2 ·eV −1 are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies

  4. CMOS technology: a critical enabler for free-form electronics-based killer applications

    KAUST Repository

    Hussain, Muhammad Mustafa; Hussain, Aftab M.; Hanna, Amir

    2016-01-01

    Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today

  5. Electron beam emittance monitor for the SSC

    International Nuclear Information System (INIS)

    Tsyganov, E.; Meinke, R.; Nexsen, W.; Kauffmann, S.; Zinchenko, A.; Taratin, A.

    1993-05-01

    A nondestructive beam profile monitor for the Superconducting Super Collider (SSC) is presented using as a probe a low-energy electron beam interacting with the proton bunch charge. Results using a full Monte Carlo simulation code look promising for the transverse and longitudinal beam profile measurements

  6. Electron Cloud at Low Emittance in CesrTA

    CERN Document Server

    Palmer, Mark; Billing, Michael; Calvey, Joseph; Conolly, Christopher; Crittenden, James; Dobbins, John; Dugan, Gerald; Eggert, Nicholas; Fontes, Ernest; Forster, Michael; Gallagher, Richard; Gray, Steven; Greenwald, Shlomo; Hartill, Donald; Hopkins, Walter; Kreinick, David; Kreis, Benjamin; Leong, Zhidong; Li, Yulin; Liu, Xianghong; Livezey, Jesse; Lyndaker, Aaron; Makita, Junki; McDonald, Michael; Medjidzade, Valeri; Meller, Robert; O'Connell, Tim; Peck, Stuart; Peterson, Daniel; Ramirez, Gabriel; Rendina, Matthew; Revesz, Peter; Rider, Nate; Rice, David; Rubin, David; Sagan, David; Savino, James; Schwartz, Robert; Seeley, Robert; Sexton, James; Shanks, James; Sikora, John; Smith, Eric; Strohman, Charles; Williams, Heather; Antoniou, Fanouria; Calatroni, Sergio; Gasior, Marek; Jones, Owain Rhodri; Papaphilippou, Yannis; Pfingstner, Juergen; Rumolo, Giovanni; Schmickler, Hermann; Taborelli, Mauro; Asner, David; Boon, Laura; Garfinkel, Arthur; Byrd, John; Celata, Christine; Corlett, John; De Santis, Stefano; Furman, Miguel; Jackson, Alan; Kraft, Rick; Munson, Dawn; Penn, Gregory; Plate, David; Venturini, Marco; Carlson, Benjamin; Demma, Theo; Dowd, Rohan; Flanagan, John; Jain, Puneet; Kanazawa, Ken-ichi; Kubo, Kiyoshi; Ohmi, Kazuhito; Sakai, Hiroshi; Shibata, Kyo; Suetsugu, Yusuke; Tobiyama, Makoto; Gonnella, Daniel; Guo, Weiming; Harkay, Katherine; Holtzapple, Robert; Jones, James; Wolski, Andrzej; Kharakh, David; Ng, Johnny; Pivi, Mauro; Wang, Lanfa; Ross, Marc; Tan, Cheng-Yang; Zwaska, Robert; Schachter, Levi; Wilkinson, Eric

    2010-01-01

    The Cornell Electron Storage Ring (CESR) has been reconfigured as a test accelerator (CesrTA) for a program of electron cloud (EC) research at ultra low emittance. The instrumentation in the ring has been upgraded with local diagnostics for measurement of cloud density and with improved beam diagnostics for the characterization of both the low emittance performance and the beam dynamics of high intensity bunch trains interacting with the cloud. A range of EC mitigation methods have been deployed and tested and their effectiveness is discussed. Measurements of the electron cloud’s effect on the beam under a range of conditions are discussed along with the simulations being used to quantitatively understand these results

  7. Laser-assisted electron emission from gated field-emitters

    CERN Document Server

    Ishizuka, H; Yokoo, K; Mimura, H; Shimawaki, H; Hosono, A

    2002-01-01

    Enhancement of electron emission by illumination of gated field-emitters was studied using a 100 mW cw YAG laser at a wavelength of 532 nm, intensities up to 10 sup 7 W/m sup 2 and mechanically chopped with a rise time of 4 mu s. When shining an array of 640 silicon emitters, the emission current responded quickly to on-off of the laser. The increase of the emission current was proportional to the basic emission current at low gate voltages, but it was saturated at approx 3 mu A as the basic current approached 100 mu A with the increase of gate voltage. The emission increase was proportional to the square root of laser power at low gate voltages and to the laser power at elevated gate voltages. For 1- and 3-tip silicon emitters, the rise and fall of the current due to on-off of the laser showed a significant time lag. The magnitude of emission increase was independent of the position of laser spot on the emitter base and reached 2 mu A at a basic current of 5 mu A without showing signs of saturation. The mech...

  8. Low Emittance Guns for the ILC Polarized Electron Beam

    International Nuclear Information System (INIS)

    Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.; Kirby, R. E.; Maruyama, T.; Miller, R. H.; Wang, J. W.; Zhou, F.

    2007-01-01

    Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressed by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of ≥200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while ≥500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns

  9. Low Emittance Guns for the ILC Polarized Electron Beam

    International Nuclear Information System (INIS)

    Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.; Kirby, R.E.; Maruyama, T.; Miller, R.H.; Wang, J.W.; Zhou, F.; SLAC

    2006-01-01

    Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressed by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of (ge)200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while (ge)500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns

  10. Emittance growth induced by electron cloud in proton storage rings

    CERN Document Server

    Benedetto, Elena; Coppa, G

    2006-01-01

    In proton and positron storage rings with many closely spaced bunches, a large number of electrons can accumulate in the beam pipe due to various mechanisms (photoemission, residual gas ionization, beam-induced multipacting). The so-formed electron cloud interacts with the positively charged bunches, giving rise to instabilities, emittance growth and losses. This phenomenon has been observed in several existing machines such as the CERN Super Proton Synchrotron (SPS), whose operation has been constrained by the electron-cloud problem, and it is a concern for the Large Hadron Collider (LHC), under construction at CERN. The interaction between the beam and the electron cloud has features which cannot be fully taken into account by the conventional and known theories from accelerators and plasma physics. Computer simulations are indispensable for a proper prediction and understanding of the instability dynamics. The main feature which renders the beam-cloud interactions so peculiar is that the the electron cloud...

  11. Shaping the electron beams with submicrosecond pulse duration in sources and electron accelerators with plasma emitters

    CERN Document Server

    Gushenets, V I

    2001-01-01

    One studies the techniques in use to shape submicrosecond electron beams and the physical processes associated with extraction of electrons from plasma in plasma emitters. Plasma emitter base sources and accelerators enable to generate pulse beams with currents varying from tens of amperes up to 10 sup 3 A, with current densities up to several amperes per a square centimeter, with pulse duration constituting hundreds of nanoseconds and with high frequencies of repetition

  12. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  13. Field Emitter Arrays for a Free Electron Laser Application

    CERN Document Server

    Shing-Bruce-Li, Kevin; Ganter, Romain; Gobrecht, Jens; Raguin, Jean Yves; Rivkin, Leonid; Wrulich, Albin F

    2004-01-01

    The development of a new electron gun with the lowest possible emittance would help reducing the total length and cost of a free electron laser. Field emitter arrays (FEAs) are an attractive technology for electron sources of ultra high brightness. Indeed, several thousands of microscopic tips can be deposited on a 1 mm diameter area. Electrons are then extracted by applying voltage to a first grid layer close to the tip apexes, the so called gate layer, and focused by a second grid layer one micrometer above the tips. The typical aperture diameter of the gate and the focusing layer is in the range of one micrometer. One challenge for such cathodes is to produce peak currents in the ampere range since the usual applications of FEAs require less than milliampere. Encouraging peak current performances have been obtained by applying voltage pulses at low frequency between gate and tips. In this paper we report on different tip materials available on the market: diamond FEAs from Extreme Devices Inc., ZrC single ...

  14. Emittance Measurements from a Laser Driven Electron Injector

    CERN Document Server

    Reis, D

    2003-01-01

    The Gun Test Facility (GTF) at the Stanford Linear Accelerator Center was constructed to develop an appropriate electron beam suitable for driving a short wavelength free electron laser (FEL) such as the proposed Linac Coherent Light Source (LCLS). For operation at a wavelength of 1.5 (angstrom), the LCLS requires an electron injector that can produce an electron beam with approximately 1 pi mm-mrad normalized rms emittance with at least 1 nC of charge in a 10 ps or shorter bunch. The GTF consists of a photocathode rf gun, emittance-compensation solenoid, 3 m linear accelerator (linac), drive laser, and diagnostics to measure the beam. The rf gun is a symmetrized 1.6 cell, s-band high gradient, room temperature, photocathode structure. Simulations show that this gun when driven by a temporally and spatially shaped drive laser, appropriately focused with the solenoid, and further accelerated in linac can produce a beam that meets the LCLS requirements. This thesis describes the initial characterization of the ...

  15. Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

    Energy Technology Data Exchange (ETDEWEB)

    Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin [Department of Electrical Engineering, KU Leuven, B-3000 Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Dou, Chunmeng [Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Xie, Qi; Maes, Jan [ASM International, B-3001 Leuven (Belgium); Tang, Fu; Givens, Michael [ASM International, Phoenix, Arizona 85034-7200 (United States); Raskin, Jean-Pierre [Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

    2015-08-03

    This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

  16. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  17. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  18. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  19. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    Science.gov (United States)

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  20. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

    2017-02-15

    Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

  1. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  2. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  3. Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology

    International Nuclear Information System (INIS)

    Dong, S.L.; Chu, T.C.; Lan, G.Y.; Wu, T.H.; Lin, Y.C.; Lee, J.S.

    2002-01-01

    Monitoring radiation exposure during diagnostic radiographic procedures has recently become an area of interest. In recent years, the LiF:Mg,Cu,P thermoluminescence dosimeter (TLD-100H) and the highly sensitive metal oxide semiconductor field effect transistor (MOSFET) dosimeter were introduced as good candidates for entrance skin dose measurements in diagnostic radiology. In the present study, the TLD-100H and the MOSFET dosimeters were evaluated for sensitivity, linearity, energy, angular dependence, and post-exposure response. Our results indicate that the TLD-100H dosimeter has excellent linearity within diagnostic energy ranges and its sensitivity variations were under 3% at tube potentials from 40 Vp to 125 kVp. Good linearity was also observed with the MOSFET dosimeter, but in low-dose regions the values are less reliable and were found to be a function of the tube potentials. Both dosimeters also presented predictable angular dependence in this study. Our findings suggest that the TLD-100H dosimeter is more appropriate for low-dose diagnostic procedures such as chest and skull projections. The MOSFET dosimeter system is valuable for entrance skin dose measurement with lumbar spine projections and certain fluoroscopic procedures

  4. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    Energy Technology Data Exchange (ETDEWEB)

    Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu [Physics Department, University of Washington, Seattle, Washington 98195 (United States)

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  5. Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

    2015-06-07

    Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

  6. Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

    Science.gov (United States)

    Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

    2007-10-01

    In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

  7. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. ROLE OF DIAMOND SECONDARY EMITTERS IN HIGH BRIGHTNESS ELECTRON SOURCES

    International Nuclear Information System (INIS)

    2005-01-01

    In this paper we explore the possibility of using diamond secondary emitter in a high average current electron injector to amplify the current from the photocathode and to isolate the cathode and the injector from each other to increase the life time of the cathode and preserve the performance of the injector. Secondary electron yield of 225 and current density of 0.8 a/cm 2 have been measured in the transmission mode from type 2 a natural diamond. Although the diamond will be heated during normal operation in the injector, calculations indicate that by cryogenically cooling the diamond, the temperature gradient along the diamond can be maintained within the acceptable range. The electron energy and temporal distributions are expected to be narrow from this device resulting in high brightness beams. Plans are underway to measure the SEY in emission mode, fabricate photocathode-diamond capsule and test diamond and capsule in superconducting RF injector

  9. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  10. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Girish [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India); Department of Chemistry, School of Engineering and Technology, CMR University, Bengaluru, 562149, Karnataka (India); Rao, K.S.R. Koteswara, E-mail: raoksrk@gmail.com [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India)

    2017-01-01

    Graphical abstract: Semiconductor metal oxides: Modifications, charge carrier dynamics and photocatalysis. - Highlights: • TiO{sub 2}, WO{sub 3} and ZnO based photocatalysis is reviewed. • Advances to improve the efficiency are emphasized. • Differences and similarities in the modifications are highlighted. • Charge carrier dynamics for each strategy are discussed. - Abstract: Metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO{sub 2}, WO{sub 3} & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO{sub 2} and WO{sub 3} in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal

  11. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

    2016-03-01

    In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

  12. Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

    Science.gov (United States)

    Emigh, Brent; Gordon, Christopher L; Connolly, Bairbre L; Falkiner, Michelle; Thomas, Karen E

    2013-09-01

    There is a need for updated radiation dose estimates in pediatric fluoroscopy given the routine use of new dose-saving technologies and increased radiation safety awareness in pediatric imaging. To estimate effective doses for standardized pediatric upper gastrointestinal (UGI) examinations at our institute using direct dose measurement, as well as provide dose-area product (DAP) to effective dose conversion factors to be used for the estimation of UGI effective doses for boys and girls up to 10 years of age at other centers. Metal oxide semiconductor field-effect transistor (MOSFET) dosimeters were placed within four anthropomorphic phantoms representing children ≤10 years of age and exposed to mock UGI examinations using exposures much greater than used clinically to minimize measurement error. Measured effective dose was calculated using ICRP 103 weights and scaled to our institution's standardized clinical UGI (3.6-min fluoroscopy, four spot exposures and four examination beam projections) as determined from patient logs. Results were compared to Monte Carlo simulations and related to fluoroscope-displayed DAP. Measured effective doses for standardized pediatric UGI examinations in our institute ranged from 0.35 to 0.79 mSv in girls and were 3-8% lower for boys. Simulation-derived and measured effective doses were in agreement (percentage differences  0.18). DAP-to-effective dose conversion factors ranged from 6.5 ×10(-4) mSv per Gy-cm(2) to 4.3 × 10(-3) mSv per Gy-cm(2) for girls and were similarly lower for boys. Using modern fluoroscopy equipment, the effective dose associated with the UGI examination in children ≤10 years at our institute is MOSFETs, which were shown to agree with Monte Carlo simulated doses.

  13. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

    2012-06-01

    We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

  14. A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

    DEFF Research Database (Denmark)

    Gammelgaard, Lauge; Bøggild, Peter; Wells, J.W.

    2008-01-01

    and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe...... spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics....

  15. Transport and acceleration of low-emittance electron beams

    International Nuclear Information System (INIS)

    Henke, H.

    1989-01-01

    Linear accelerators for colliders and for free-electron lasers require beams with both high brightness and low emittance. Their transport and acceleration is limited by single-particle effects originating from injection jitter, from the unavoidable position jitter of components, and from chromaticity. Collective phenomena, essentially due to wake fields acting within the bunch, are most severe in the case of high-frequency structures, i.e. a small aperture. Whilst, in the past, the transverse wake-field effects were believed to be most serious, we know that they can even be beneficial when inducing a corresponding spread in betatron oscillation either by an energy spread along the bunch or by an RF focusing system acting on the bunch scale. This paper evaluates the different effects by simple analytical means after making use of the smooth focusing approximation and the two-particle model. Numerical simulation results are used for verification. 14 refs., 6 figs., 2 tabs

  16. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    Energy Technology Data Exchange (ETDEWEB)

    Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  17. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  18. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  19. Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Domengie, F., E-mail: florian.domengie@st.com; Morin, P. [STMicroelectronics Crolles 2 (SAS), 850 Rue Jean Monnet, 38926 Crolles Cedex (France); Bauza, D. [CNRS, IMEP-LAHC - Grenoble INP, Minatec: 3, rue Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1 (France)

    2015-07-14

    We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metal atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.

  20. Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology

    International Nuclear Information System (INIS)

    Emigh, Brent; Gordon, Christopher L.; Falkiner, Michelle; Thomas, Karen E.; Connolly, Bairbre L.

    2013-01-01

    There is a need for updated radiation dose estimates in pediatric fluoroscopy given the routine use of new dose-saving technologies and increased radiation safety awareness in pediatric imaging. To estimate effective doses for standardized pediatric upper gastrointestinal (UGI) examinations at our institute using direct dose measurement, as well as provide dose-area product (DAP) to effective dose conversion factors to be used for the estimation of UGI effective doses for boys and girls up to 10 years of age at other centers. Metal oxide semiconductor field-effect transistor (MOSFET) dosimeters were placed within four anthropomorphic phantoms representing children ≤10 years of age and exposed to mock UGI examinations using exposures much greater than used clinically to minimize measurement error. Measured effective dose was calculated using ICRP 103 weights and scaled to our institution's standardized clinical UGI (3.6-min fluoroscopy, four spot exposures and four examination beam projections) as determined from patient logs. Results were compared to Monte Carlo simulations and related to fluoroscope-displayed DAP. Measured effective doses for standardized pediatric UGI examinations in our institute ranged from 0.35 to 0.79 mSv in girls and were 3-8% lower for boys. Simulation-derived and measured effective doses were in agreement (percentage differences 0.18). DAP-to-effective dose conversion factors ranged from 6.5 x 10 -4 mSv per Gy-cm 2 to 4.3 x 10 -3 mSv per Gy-cm 2 for girls and were similarly lower for boys. Using modern fluoroscopy equipment, the effective dose associated with the UGI examination in children ≤10 years at our institute is < 1 mSv. Estimations of effective dose associated with pediatric UGI examinations can be made for children up to the age of 10 using the DAP-normalized conversion factors provided in this study. These estimates can be further refined to reflect individual hospital examination protocols through the use of direct organ

  1. Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study.

    Science.gov (United States)

    Koivisto, J; Schulze, D; Wolff, J; Rottke, D

    2014-01-01

    The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO(®) head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; -5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; -14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; -16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region.

  2. Measuring Beam Sizes and Ultra-Small Electron Emittances Using an X-ray Pinhole Camera.

    Science.gov (United States)

    Elleaume, P; Fortgang, C; Penel, C; Tarazona, E

    1995-09-01

    A very simple pinhole camera set-up has been built to diagnose the electron beam emittance of the ESRF. The pinhole is placed in the air next to an Al window. An image is obtained with a CCD camera imaging a fluorescent screen. The emittance is deduced from the size of the image. The relationship between the measured beam size and the electron beam emittance depends upon the lattice functions alpha, beta and eta, the screen resolution, pinhole size and photon beam divergence. The set-up is capable of measuring emittances as low as 5 pm rad and is presently routinely used as both an electron beam imaging device and an emittance diagnostic.

  3. Emittance growth caused by bends in the Los Alamos free-electron laser energy recovery experiment

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1987-01-01

    Experimentally transporting the beam from the wiggler to the decelerators in the energy recovery experiment (ERX) at the Los Alamos National Laboratory free-electron laser was more difficult than expected because of the large initial emittance in the beam. This emittance was apparently caused in an early 60 0 achromatic bend. To get this beam through subsequent bends without wall interception, the quadrupole focusing had to be changed from the design amount; as a result, the emittance grew further. This paper discusses various mechanisms for this emittance growth in the 60 0 bend, including effects caused by path changes in the bend resulting from wake-field-induced energy changes of particles in the beam and examines emittance filters, ranging from a simple aperture near a beam crossover to more complicated telescope schemes designed to regain the original emittance before the 60 0 bend

  4. Integrated circuits with emitter coupling and their application in nanosecond nuclear electronics

    International Nuclear Information System (INIS)

    Basiladze, S.G.

    1976-01-01

    Principal static and dynamic characteristics are considered of integrated circuits with emitter coupling, as well as problems of signal transmission. Diagrams are given of amplifiers, discriminators, time interval drivers, generators, etc. Systems and units of nanosecond electronics employing integrated circuits with emitter coupling are briefly described

  5. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    Science.gov (United States)

    Teng, Chen; Elias, Luis R.

    1995-02-01

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations.

  6. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    International Nuclear Information System (INIS)

    Chen Teng; Central Florida Univ., Orlando, FL; Elias, L.R. R.; Central Florida Univ., Orlando, FL

    1995-01-01

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations. ((orig.))

  7. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen Teng [University of Central Florida, Orlando, FL (United States). Center for Research in Electro-Optics and Lasers (CREOL)]|[Central Florida Univ., Orlando, FL (United States). Dept. of Physics; Elias, L.R. R. [University of Central Florida, Orlando, FL (United States). Center for Research in Electro-Optics and Lasers (CREOL)]|[Central Florida Univ., Orlando, FL (United States). Dept. of Physics

    1995-01-30

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations. ((orig.))

  8. Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun; Sonde, Sushant; Banerjee, Sanjay K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 (United States); Kwon, Hyuk-Min [SK Hynix, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1 (Korea, Republic of); Orzali, Tommaso; Kim, Tae-Woo, E-mail: twkim78@gmail.com [SEMATECH Inc., 257 Fuller Rd #2200, Albany, New York 12203 (United States); Kim, Dae-Hyun [Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 702-701 (Korea, Republic of)

    2015-11-02

    In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}), which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

  9. Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Li, Kuan-Wei [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Lin, Pao-Hung; Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

    2017-06-01

    Graphical abstract: The pattern design provides a new structure of surface-conduction electron-emitter display (SED). Delta-star shaped vertically aligned CNT (VACNT) arrays with 20o tips can simultaneously provide three emitters to bombard the sides of equilateral triangles pattern of VACNT, which produces numerous secondary electrons and enhance the SED efficiency. - Highlights: • The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. • The vertically aligned CNT (VACNT) arrays with 20° tips of the delta-star arrangement are used as cathodes that easily emit electrons. The cathode pattern simultaneously provides three emitters to bombard the sides of equilateral triangles pattern of VACNT. • The VACNT arrays were covered with magnesium oxide (MgO) nanostructures to promote the surface-conduction electron-emitter display (SED) efficiency (η). • The η was stably maintained in the 75–85% range. The proposed design provides a facile new method for developing SED applications. - Abstract: The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. Vertically aligned CNT arrays with a delta-star arrangement were patterned and synthesized onto a quartz substrate using photolithography and thermal chemical vapor deposition. Delta-star shaped VACNT arrays with 20° tips are used as cathodes that easily emit electrons because of their high electrical field gradient. In order to improve the field emission and secondary electrons (SEs) in SCE applications, magnesium oxide (MgO) nanostructures were coated onto the VACNT arrays to promote the surface-conduction electron-emitter display (SED) efficiency (η). According to the definition of η in SCE applications, in this study, the η was stably maintained in the 75–85% range. The proposed design provides a facile new method for

  10. Growth rate of non-thermodynamic emittance of intense electron beams

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1998-01-01

    The nonlinear free-energy concept has been particularly useful in estimating the emittance growth resulting from any excess energy of electron beams in periodic and uniform channels. However, additional emittance growth, that is geometrical rather than thermodynamic in origin, is induced if the particles have different kinetic energies and axial velocities, which is common for mildly relativistic, very intense electron beams. This effect is especially strong if particles lose or gain significant kinetic energy due to the beam's potential depression, as the beam converges and diverges. In this paper we analyze these geometric emittance growth mechanisms for a uniform, continuous, intense electron beam in a focusing transport channel consisting of discrete solenoidal magnets, over distances short enough that the beam does not reach equilibrium. These emittance growth mechanisms are based on the effects of (1) energy variations leading to nonlinearities in the space-charge force even if the current density is uniform, (2) an axial velocity shear radially along the beam due to the beam's azimuthal motion in the solenoids, and (3) an energy redistribution of the beam as the beam compresses or expands. The geometric emittance growth is compared in magnitude with that resulting from the nonlinear free energy, for the case of a mismatched beam in a uniform channel, and is shown to dominate for certain experimental conditions. Rules for minimizing the emittance along a beamline are outlined. copyright 1998 The American Physical Society

  11. Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

    Energy Technology Data Exchange (ETDEWEB)

    Grishkov, A. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation); Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G. [Tomsk State University of Control Systems and Radioelectronics (Russian Federation); Shidlovskiy, S. V. [Tomsk State University (Russian Federation); Shklyaev, V. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation)

    2016-07-15

    The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

  12. Emittance simulation for a different electron bunch charges with upgraded PITZ setup

    Energy Technology Data Exchange (ETDEWEB)

    Vashchenko, Grygorii [DESY, Platanenallee 6, 15738 Zeuthen (Germany)

    2013-07-01

    The photo injector test facility at DESY, Zeuthen site (PITZ) was invented with an aim to develop, characterize and optimize the electron sources for linac driven free electron lasers like FLASH and European XFEL. As a prerequisite for a successful experimental emittance optimization, emittance dependencies on the majority of linac parameters have to be studied in simulations. Despite that the nominal electron bunch charge for the operation of FLASH and XFEL is 1nC, there is an interest of the community to operate with other bunch charges. Emittance dependencies on such machine parameters like laser spot size on the photo cathode, laser pulse length, gun launching phase, focusing solenoid current and first accelerating structure gradient are simulated for different electron bunch charges. Based on the simulations data the systematic errors caused by detuning of the different machine parameters from their optimum values are estimated.

  13. Microelectrode for energy and current control of nanotip field electron emitters

    International Nuclear Information System (INIS)

    Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

    2013-01-01

    Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations

  14. Ultrafast transmission electron microscopy using a laser-driven field emitter: Femtosecond resolution with a high coherence electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Feist, Armin; Bach, Nora; Rubiano da Silva, Nara; Danz, Thomas; Möller, Marcel; Priebe, Katharina E.; Domröse, Till; Gatzmann, J. Gregor; Rost, Stefan; Schauss, Jakob; Strauch, Stefanie; Bormann, Reiner; Sivis, Murat; Schäfer, Sascha, E-mail: sascha.schaefer@phys.uni-goettingen.de; Ropers, Claus, E-mail: claus.ropers@uni-goettingen.de

    2017-05-15

    We present the development of the first ultrafast transmission electron microscope (UTEM) driven by localized photoemission from a field emitter cathode. We describe the implementation of the instrument, the photoemitter concept and the quantitative electron beam parameters achieved. Establishing a new source for ultrafast TEM, the Göttingen UTEM employs nano-localized linear photoemission from a Schottky emitter, which enables operation with freely tunable temporal structure, from continuous wave to femtosecond pulsed mode. Using this emission mechanism, we achieve record pulse properties in ultrafast electron microscopy of 9 Å focused beam diameter, 200 fs pulse duration and 0.6 eV energy width. We illustrate the possibility to conduct ultrafast imaging, diffraction, holography and spectroscopy with this instrument and also discuss opportunities to harness quantum coherent interactions between intense laser fields and free-electron beams. - Highlights: • First implementation of an ultrafast TEM employing a nanoscale photocathode. • Localized single photon-photoemission from nanoscopic field emitter yields low emittance ultrashort electron pulses. • Electron pulses focused down to ~9 Å, with a duration of 200 fs and an energy width of 0.6 eV are demonstrated. • Quantitative characterization of ultrafast electron gun emittance and brightness. • A range of applications of high coherence ultrashort electron pulses is shown.

  15. Low emittance electron beam formation with a 17 GHz RF gun

    Directory of Open Access Journals (Sweden)

    W. J. Brown

    2001-08-01

    Full Text Available We report on electron beam quality measurement results from the Massachusetts Institute of Technology 17 GHz RF gun experiment. The 1.5 cell RF gun uses a solenoid for emittance compensation. It has produced bunch charges up to 0.1 nC with beam energies up to 1 MeV. The normalized rms emittance of the beam after 35 cm of transport from the gun has been measured by a slit technique to be 3π mm mrad for a 50 pC bunch. This agrees well with PARMELA simulations at these beam energies. At the exit of the electron gun, we estimate the emittance to be about 1π mm mrad, which corresponds to a beam brightness of about 80 A/(π mm mrad^{2}. Improved beam quality should be possible with a higher energy output electron beam from the gun.

  16. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  17. Plexciton quenching by resonant electron transfer from quantum emitter to metallic nanoantenna.

    Science.gov (United States)

    Marinica, D C; Lourenço-Martins, H; Aizpurua, J; Borisov, A G

    2013-01-01

    Coupling molecular excitons and localized surface plasmons in hybrid nanostructures leads to appealing, tunable optical properties. In this respect, the knowledge about the excitation dynamics of a quantum emitter close to a plasmonic nanoantenna is of importance from fundamental and practical points of view. We address here the effect of the excited electron tunneling from the emitter into a metallic nanoparticle(s) in the optical response. When close to a plasmonic nanoparticle, the excited state localized on a quantum emitter becomes short-lived because of the electronic coupling with metal conduction band states. We show that as a consequence, the characteristic features associated with the quantum emitter disappear from the optical absorption spectrum. Thus, for the hybrid nanostructure studied here and comprising quantum emitter in the narrow gap of a plasmonic dimer nanoantenna, the quantum tunneling might quench the plexcitonic states. Under certain conditions the optical response of the system approaches that of the individual plasmonic dimer. Excitation decay via resonant electron transfer can play an important role in many situations of interest such as in surface-enhanced spectroscopies, photovoltaics, catalysis, or quantum information, among others.

  18. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  19. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  20. Nonlinear electrostatic emittance compensation in kA, fs electron bunches

    International Nuclear Information System (INIS)

    Geer, S.B. van der; Loos, M.J. de; Botman, J.I.M.; Luiten, O.J.; Wiel, M.J. van der

    2002-01-01

    Nonlinear space-charge effects play an important role in emittance growth in the production of kA electron bunches with a bunch length much smaller than the bunch diameter. We propose a scheme employing the radial third-order component of an electrostatic acceleration field, to fully compensate the nonlinear space-charge effects. This results in minimal transverse root-mean-square emittance. The principle is demonstrated using our design simulations of a device for the production of high-quality, high-current, subpicosecond electron bunches using electrostatic acceleration in a 1 GV/m field. Simulations using the GPT code produce a bunch of 100 pC and 73 fs full width at half maximum pulse width, resulting in a peak current of about 1.2 kA at an energy of 2 MeV. The compensation scheme reduces the root-mean-square emittance by 34% to 0.4π mm mrad

  1. Scaling laws with current for equilibrium momentum spread and emittances from intrabeam scattering and electron cooling

    International Nuclear Information System (INIS)

    Hasse, R.W.; Boine-Frankenheim, O.

    2004-01-01

    Based on the theories of Piwinski, Bjorken-Mtingawa and Martini of Coulomb scattering, expressions for the heating rates due to intrabeam scattering were known since a long time. Simplifications by Wei-Parzen and Rao and Piwinski led to analytic approximations which are easily applicable to existing lattices. We use these approximations and also the formulae from thermal equilibration of Struckmeier and equate them to either constant cooling rates from electron cooling or to the Novosibirsk cooling rates for electron cooling to calculate the equilibrium values of the horizontal and vertical emittances and the momentum spread (longitudinal emittance) for typical beams in the ESR or in the HESR. For constant cooling and all approximation formulae the ratio of current to the product of the three emittances remains almost constant. This yields a slope of the momentum spread with current between 0.2 and 0.3, in agreement with experimental data. Using the Novosibirsk cooling rates this slope is much larger

  2. Test beam results of a low-pressure micro-strip gas chamber with a secondary-electron emitter

    International Nuclear Information System (INIS)

    Kwan, S.; Anderson, D.F.; Zimmerman, J.; Sbarra, C.; Salomon, M.

    1994-10-01

    We present recent results, from a beam test, on the angular dependence of the efficiency and the distribution of the signals on the anode strips of a low-pressure microstrip gas chamber with a thick CsI layer as a secondary-electron emitter. New results of CVD diamond films as secondary-electron emitters are discussed

  3. Evaluation and application of the low energy electron emitter 161Tb

    International Nuclear Information System (INIS)

    Lehenberger, Silvia M.

    2010-01-01

    The low energy electron emitter 161 Tb was produced n.c.a. in quantities sufficient for therapeutic applications and successfully used for labeling of peptides and antibodies. Furthermore, these compounds have been compared to n.c.a. 177 Lu labeled mAbs via cell experiments, a radionuclide that is already used in clinical nuclear oncology.

  4. Measurements of electron beam emittance in the Accelerator Test Facility damping ring operated in multibunch modes

    Directory of Open Access Journals (Sweden)

    Yosuke Honda

    2003-09-01

    Full Text Available We present the measurement results of electron beam emittance in the Accelerator Test Facility damping ring operated in multibunch modes. The measurements were carried out with an upgraded laser wire beam profile monitor. The monitor has now a vertical wire as well as a horizontal one and is able to make much faster measurements thanks to an increased effective laser power inside the cavity. The measured emittance shows no large bunch-to-bunch dependence in either the horizontal or vertical directions. The values of the vertical emittance are similar to those obtained in the single-bunch operation. The present results are an important step toward the realization of a high-energy linear collider.

  5. Parametric emittance measurements of electron beams produced by a laser plasma accelerator

    Science.gov (United States)

    Barber, S. K.; van Tilborg, J.; Schroeder, C. B.; Lehe, R.; Tsai, H.-E.; Swanson, K. K.; Steinke, S.; Nakamura, K.; Geddes, C. G. R.; Benedetti, C.; Esarey, E.; Leemans, W. P.

    2018-05-01

    Laser plasma accelerators (LPA) offer an exciting possibility to deliver high energy, high brightness electrons beams in drastically smaller distance scales than is typical for conventional accelerators. As such, LPAs draw considerable attention as potential drivers for next generation light sources and for a compact linear collider. In order to asses the viability of an LPA source for a particular application, the brightness of the source should be properly characterized. In this paper, we present charge dependent transverse emittance measurements of LPA sources using both ionization injection and shock induced density down ramp injection, with the latter delivering smaller transverse emittances by a factor of two when controlling for charge density. The single shot emittance method is described in detail with a discussion on limitations related to second order transport effects. The direct role of space charge is explored through a series of simulations and found to be consistent with experimental observations.

  6. Special features of electron sources with CNT field emitter and micro grid

    International Nuclear Information System (INIS)

    Knapp, Wolfram; Schleussner, Detlef

    2005-01-01

    A micro-sized electron source plays an important role for new vacuum triode applications. For these applications, an electron source with CNT field emitter and micro grid for 1 mA was developed and investigated. The miniaturisation of the electron source was achieved by the use of a carbon nanotube (CNT) field emitter and a micro grid, with a distance of only a few micrometers. Because of the threshold field strength for field emission of CNTs being in the range 1-5 V/μm, the grid voltage can be lower than 100 V. In our contribution, we discuss the influence of the micro grid on electron source properties, especially anode-current hysteresis, anode-field penetration through the micro grid and micro-lensing effect

  7. Electron Emitter for small-size Electrodynamic Space Tether using MEMS Technology

    DEFF Research Database (Denmark)

    Fleron, René A. W.; Blanke, Mogens

    2004-01-01

    Adjustment of the orbit of a spacecraft using the forces created by an electro-dynamic space-tether has been shown as a theoretic possibility in recent literature. Practical implementation is being pursued for larger scale missions where a hot filament device controls electron emission...... and the current flowing in the electrodynamic space tether. Applications to small spacecraft, or space debris in the 1–10 kg range, possess difficulties with electron emission technology, as low power emitting devices are needed. This paper addresses the system concepts of a small spacecraft electrodynamic tether...... system with focus on electron emitter design and manufacture using micro-electro-mechanical- system (MEMS) technology. The paper addresses the system concepts of a small size electrodynamic tether mission and shows a novel electron emitter for the 1-2 mA range where altitude can be effectively affected...

  8. Multi-field electron emission pattern of 2D emitter: Illustrated with graphene

    Science.gov (United States)

    Luo, Ma; Li, Zhibing

    2016-11-01

    The mechanism of laser-assisted multi-field electron emission of two-dimensional emitters is investigated theoretically. The process is basically a cold field electron emission but having more controllable components: a uniform electric field controls the emission potential barrier, a magnetic field controls the quantum states of the emitter, while an optical field controls electron populations of specified quantum states. It provides a highly orientational vacuum electron line source whose divergence angle over the beam plane is inversely proportional to square root of the emitter height. Calculations are carried out for graphene with the armchair emission edge, as a concrete example. The rate equation incorporating the optical excitation, phonon scattering, and thermal relaxation is solved in the quasi-equilibrium approximation for electron population in the bands. The far-field emission patterns, that inherit the features of the Landau bands, are obtained. It is found that the optical field generates a characteristic structure at one wing of the emission pattern.

  9. Spectral line shape simulation for electron stark-broadening of ion emitters in plasmas

    International Nuclear Information System (INIS)

    Dufour, Emmanuelle; Calisti, Annette; Talin, Bernard; Gigosos, Marco A.; Gonzalez, Manuel A.; Dufty, Jim W.

    2002-01-01

    Electron broadening for ions in plasmas is investigated in the framework of a simplified semi-classical model involving an ionic emitter imbedded in an electron gas. A regularized Coulomb potential that removes the divergence at short distances is postulated for the ion-electron interaction. Line shape simulations based on Molecular Dynamics for the ion impurity and the electrons, accounting for all the correlations, are reported. Comparisons with line shapes obtained with a quasi-particle model show expected correlation effects. Through an analysis of the results with the line shape code PPP, it is inferred that the correlation effect results mainly from the microfield dynamic properties

  10. Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations.

    Science.gov (United States)

    Koivisto, J; Kiljunen, T; Tapiovaara, M; Wolff, J; Kortesniemi, M

    2012-09-01

    The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 μSv and the PCXMC simulations resulted in a value of 136 μSv. The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region. Copyright © 2012 Elsevier Inc. All rights reserved.

  11. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

    Science.gov (United States)

    Zade, Dariush; Kanda, Takashi; Yamashita, Koji; Kakushima, Kuniyuki; Nohira, Hiroshi; Ahmet, Parhat; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Hattori, Takeo; Iwai, Hiroshi

    2011-10-01

    We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3 µF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.

  12. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  13. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    International Nuclear Information System (INIS)

    Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

    2014-01-01

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond

  14. A multislit transverse-emittance diagnostic for space-charge-dominated electron beams

    International Nuclear Information System (INIS)

    Piot, P.; Song, J.; Li, R.

    1997-01-01

    Jefferson Lab is developing a 10 MeV injector to provide an electron beam for a high-power free-electron laser (FEL). To characterize the transverse phase space of the space-charged-dominated beam produced by this injector, the authors designed an interceptive multislit emittance diagnostic. It incorporates an algorithm for phase-space reconstruction and subsequent calculation of the Twiss parameters and emittance for both transverse directions at an update rate exceeding 1 Hz, a speed that will facilitate the transverse-phase-space matching between the injector and the FEL's accelerator that is critical for proper operation. This paper describes issues pertaining to the diagnostic's design. It also discusses the acquisition system, as well as the software algorithm and its implementation in the FEL control system. First results obtained from testing this diagnostic in Jefferson Lab's Injector Test Stand are also included

  15. Novel non-intercepting diagnostic techniques for low-emittance relativistic electron beams

    International Nuclear Information System (INIS)

    Moran, M.J.; Chang, B.

    1988-01-01

    Relativistic electron beams are being generated with emittances low enough that diffraction radiation can be used for beam diagnostics. Techniques based on diffraction radiation can be used to measure the beam transverse momentum distribution and to measure the transverse spatial distribution. The radiation is intense and can be in the visible spectral region where optical diagnostic techniques can be used to maximum advantage. 4 refs. 3 figs

  16. Method of measuring the current density distribution and emittance of pulsed electron beams

    International Nuclear Information System (INIS)

    Schilling, H.B.

    1979-07-01

    This method of current density measurement employs an array of many Faraday cups, each cup being terminated by an integrating capacitor. The voltages of the capacitors are subsequently displayed on a scope, thus giving the complete current density distribution with one shot. In the case of emittance measurements, a moveable small-diameter aperture is inserted at some distance in front of the cup array. Typical results with a two-cathode, two-energy electron source are presented. (orig.)

  17. Viability of Using Diamond Field Emitter Array Cathodes in Free Electron Lasers

    Science.gov (United States)

    2010-06-01

    essential component of a field emitter array is the shape of the electric field lines and equipotential lines at the surface of the array. The...BARRIER AND QUANTUM TUNNELING ...........25 B. FIELD ENHANCEMENT AND SURFACE PROTRUSIONS .........26 C. ELECTRIC FIELDS AND ELECTRON TRAVEL...26 Figure 4. Diagram of a protrusion (triangular in shape) from the surface of a cathode. The protrusion is of height h, with a

  18. Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

    Science.gov (United States)

    Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

    2014-02-01

    Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

  19. Ultra-low emittance electron beam generation using ionization injection in a plasma beatwave accelerator

    Science.gov (United States)

    Schroeder, Carl; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

    2017-10-01

    Ultra-low emittance beams can be generated using ionization injection of electrons into a wakefield excited by a plasma beatwave accelerator. This all-optical method of electron beam generation uses three laser pulses of different colors. Two long-wavelength laser pulses, with frequency difference equal to the plasma frequency, resonantly drive a plasma wave without fully ionizing a gas. A short-wavelength injection laser pulse (with a small ponderomotive force and large peak electric field), co-propagating and delayed with respect to the beating long-wavelength lasers, ionizes a fraction of the remaining bound electrons at a trapped wake phase, generating an electron beam that is accelerated in the wakefield. Using the beating of long-wavelength pulses to generate the wakefield enables atomically-bound electrons to remain at low ionization potentials, reducing the required amplitude of the ionization pulse, and, hence, the initial transverse momentum and emittance of the injected electrons. An example is presented using two lines of a CO2 laser to form a plasma beatwave accelerator to drive the wake and a frequency-doubled Ti:Al2O3 laser for ionization injection. Supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  20. Transverse-emittance measurements on an S-band photocathode RF electron gun

    CERN Document Server

    Schmerge, J F; Clendenin, J E; Decker, Franz Josef; Dowell, D H; Gierman, S M; Limborg, C G; Murphy, B F

    2002-01-01

    Proposed fourth-generation light sources using SASE FELs to generate short pulse, coherent, X-rays require demonstration of high brightness electron sources. The gun test facility at SLAC was built to test high brightness sources for the proposed linac coherent light source at SLAC. The transverse-emittance measurements are made at nearly 30 MeV by measuring the spot size on a YAG screen using the quadrupole scan technique. The emittance was measured to vary from 1 to 3.5 mm mrad as the charge is increased from 50 to 350 pC using a laser pulse width of 2 ps FWHM. The measurements are in good agreement with simulation results using the LANL version of PARMELA.

  1. Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

    Science.gov (United States)

    Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

    2017-06-01

    The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

  2. Asymmetrical field emitter

    Science.gov (United States)

    Fleming, J.G.; Smith, B.K.

    1995-10-10

    A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

  3. Phosphorescent rhenium emitters based on two electron-withdrawing diamine ligands: Structure, characterization and electroluminescent performance

    Energy Technology Data Exchange (ETDEWEB)

    Rui, Mei, E-mail: meirui2015@163.com [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yuhong, Wang [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yinting, Wang; Na, Zhang [Communication Training Base of The Headquarters of The General Staff, Zhangjiakou 075100, Hebei (China)

    2014-09-15

    In this paper, two diamine ligands having electron-withdrawing oxadiazole group and their corresponding Re(I) complexes were synthesized. Their geometric structure, electronic transition, photophysical property, thermal stability and electrochemical property were discussed in detail. Experimental data suggested that both complexes were promising yellow emitters with suited energy levels and good thermal stability for electroluminescent application. The correlation between emission performance and electron-withdrawing group was analyzed. It was found that electron-withdrawing group favored emission performance improvement. Their electroluminescence performance was also explored. Yellow electroluminescence was observed with maximum brightness of 1743 cd/m{sup 2}. - Highlights: • Oxadiazole derived diamine ligands and their Re(I) complexes were synthesized. • Their characters and properties were analyzed and compared in detail. • Electron-withdrawing group was proved to be positive for PL improvement. • Electroluminescence was obtained with maximum brightness of 1743 cd/m{sup 2}.

  4. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Science.gov (United States)

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  5. Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2016-01-14

    The effect of room temperature sulfur passivation of the surface of Ge{sub 0.83}Sn{sub 0.17} prior to high-k dielectric (HfO{sub 2}) deposition is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the chemical bonding at the interface of HfO{sub 2} and Ge{sub 0.83}Sn{sub 0.17}. Sulfur passivation is found to be effective in suppressing the formation of both Ge oxides and Sn oxides. A comparison of XPS results for sulfur-passivated and non-passivated Ge{sub 0.83}Sn{sub 0.17} samples shows that sulfur passivation of the GeSn surface could also suppress the surface segregation of Sn atoms. In addition, sulfur passivation reduces the interface trap density D{sub it} at the high-k dielectric/Ge{sub 0.83}Sn{sub 0.17} interface from the valence band edge to the midgap of Ge{sub 0.83}Sn{sub 0.17}, as compared with a non-passivated control. The impact of the improved D{sub it} is demonstrated in Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs with sulfur passivation show improved subthreshold swing S, intrinsic transconductance G{sub m,int}, and effective hole mobility μ{sub eff} as compared with the non-passivated control. At a high inversion carrier density N{sub inv} of 1 × 10{sup 13 }cm{sup −2}, sulfur passivation increases μ{sub eff} by 25% in Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs.

  6. Single-Particle Dynamics in Electron Storage Rings with Extremely Low Emittance

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yunhai; /SLAC

    2011-05-31

    Electron storage rings are widely used for high luminosity colliders, damping rings in high-energy linear colliders, and synchrotron light sources. They have become essential facilities to study high-energy physics and material and medical sciences. To further increase the luminosity of colliders or the brightness of synchrotron light sources, the beam emittance is being continually pushed downward, recently to the nanometer region. In the next decade, another order of reduction is expected. This requirement of ultra-low emittance presents many design challenges in beam dynamics, including better analysis of maps and improvement of dynamic apertures. To meet these challenges, we have refined transfer maps of common elements in storage rings and developed a new method to compute the resonance driving terms as they are built up along a beamline. The method is successfully applied to a design of PEP-X as a future light source with 100-pm emittance. As a result, we discovered many unexpected cancelations of the fourth-order resonance terms driven by sextupoles within an achromat.

  7. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    International Nuclear Information System (INIS)

    Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-01-01

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

  8. Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices

    Science.gov (United States)

    Omar, Rejaiba; Mohamed, Ben Amar; Adel, Matoussi

    2015-04-01

    This paper investigates the electrical behavior of the Al/SiO2/Si MOS structure. We have used the complex admittance method to develop an analytical model of total capacitance applied to our proposed equivalent circuit. The charge density, surface potential, semiconductor capacitance, flatband and threshold voltages have been determined by resolving the Poisson transport equations. This modeling is used to predict in particular the effects of frequency, parallel and series resistance on the capacitance-voltage characteristic. Results show that the variation of both frequency and parallel resistance causes strong dispersion of the C-V curves in the inversion regime. It also reveals that the series resistance influences the shape of C-V curves essentially in accumulation and inversion modes. A significant decrease of the accumulation capacitance is observed when R s increases in the range 200-50000 Ω. The degradation of the C-V magnitude is found to be more pronounced when the series resistance depends on the substrate doping density. When R s varies in the range 100 Ω-50 kΩ, it shows a decrease in the flatband voltage from -1.40 to -1.26 V and an increase in the threshold voltage negatively from -0.28 to -0.74 V, respectively. Good agreement has been observed between simulated and measured C-V curves obtained at high frequency. This study is necessary to control the adverse effects that disrupt the operation of the MOS structure in different regimes and optimizes the efficiency of such electronic device before manufacturing.

  9. Stationary scanning x-ray source based on carbon nanotube field emitters

    International Nuclear Information System (INIS)

    Zhang, J.; Yang, G.; Cheng, Y.; Gao, B.; Qiu, Q.; Lee, Y.Z.; Lu, J.P.; Zhou, O.

    2005-01-01

    We report a field emission x-ray source that can generate a scanning x-ray beam to image an object from multiple projection angles without mechanical motion. The key component of the device is a gated carbon nanotube field emission cathode with an array of electron emitting pixels that are individually addressable via a metal-oxide-semiconductor field effect transistor-based electronic circuit. The characteristics of this x-ray source are measured and its imaging capability is demonstrated. The device can potentially lead to a fast data acquisition rate for laminography and tomosynthesis with a simplified experimental setup

  10. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    Science.gov (United States)

    Talman, Richard; Malitsky, Nikolay; Stulle, Frank

    2009-01-01

    Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries) string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004)PRABFM1098-440210.1103/PhysRevSTAB.7.100701; N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004); R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006), Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes): (i) Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using TraFiC4* [A. Kabel , Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000)NIMAER0168-900210.1016/S0168-9002(00)00729-4] and ELEGANT [M. Borland, Argonne National Laboratory Report No. LS-287, 2000]). All three simulations are in fair agreement with the data except that the UAL simulation predicts a substantial dependence of horizontal emittance γx on beam width (as controlled by the lattice βx function) at the compressor location. This is consistent with the experimental observations, but inconsistent with other simulations. Excellent agreement concerning dependence of bunch energy loss on bunch length and magnetic field strength [L. Groening , in Proceedings of the Particle Accelerator Conference, Chicago, IL, 2001 (IEEE, New York, 2001), http://groening.home.cern/groening/csr_00.htm] confirms our understanding of the role played by coherent synchrotron radiation (CSR). (ii) A controlled comparison is made between the predictions of the UAL code and those of CSRTrack [M. Dohlus and T. Limberg, in Proceedings of the 2004 FEL Conference, pp. 18

  11. Unbiased metal oxide semiconductor ionising radiation dosemeter

    International Nuclear Information System (INIS)

    Kumurdjian, N.; Sarrabayrouse, G.J.

    1995-01-01

    To assess the application of MOS devices as low dose rate dosemeters, the sensitivity is the major factor although little studies have been performed on that subject. It is studied here, as well as thermal stability and linearity of the response curve. Other advantages are specified such as large measurable dose range, low cost, small size, possibility of integration. (D.L.)

  12. Low-energy electron emitters for targeted radiotherapy of small tumours

    International Nuclear Information System (INIS)

    Bernhardt, Peter; Forssell-Aronsson, Eva; Jacobsson, Lars; Skarnemark, Gunnar

    2001-01-01

    The possibility of using electron emitters to cure a cancer with metastatic spread depends on the energy of the emitted electrons. Electrons with high energy will give a high, absorbed dose to large tumours, but the absorbed dose to small tumours or single tumour cells will be low, because the range of the electrons is too long. The fraction of energy absorbed within the tumour decreases with increasing electron energy and decreasing tumour size. For tumours smaller than 1 g, the tumour-to-normal-tissue mean absorbed dose-rate ratio, TND, will be low, e.g. for 131 I and 90 Y, because of the high energy of the emitted electrons. For radiotherapy of small tumours, radionuclides emitting charged particles with short ranges (a few m u m ) are required. A mathematical model was constructed to evaluate the relation between TND and electron energy, photon-to-electron energy ratio, p/e, and tumour size. Criteria for the selection of suitable radionuclides for the treatment of small tumours were defined based on the results of the TND model. In addition, the possibility of producing such radionuclides and their physical and chemical properties were evaluated. Based on the mathematical model, the energy of the emitted electrons should be = 40 keV for small tumours ( 58m Co, 103m Rh, 119 Sb, 161 Ho, and 189m Os. All of these nuclides by internal transition or electron capture, which yields conversion and Auger electrons, and it should be possible to produce most of them in therapeutic amounts. The five low-energy electron-emitting radionuclides identified may be relevant in the radiation treatment of small tumours, especially if bound to internalizing radiopharmaceuticals

  13. Emittance and damping of electrons in the neighborhood of resonance fixed points

    International Nuclear Information System (INIS)

    Crosbie, E.A.

    1993-01-01

    The stable fixed points generated by nonlinear field harmonics in a cyclic lattice define a multiturn stable orbit. The position of the orbit for each turn in each magnet of the lattice determines the betatron tunes and lattice dispersion functions describing the linear motion of charged particles with respect to the stable orbit. Since the position of the fixed points is dependent in part on the central orbit tune, it turns out that the multiturn orbit dispersion function depends to a large extent on the central orbit chromaticity. In particular, the horizontal partition number can be made to vary from values less than zero (horizontal antidamping for electrons) to values greater than three (longitudinal antidamping). The central orbit chromaticity therefore plays a major role in determining the characteristic emittance of an electron beam with respect to the multiturn orbit

  14. Towards a Chemiresistive Sensor-Integrated Electronic Nose: A Review

    Directory of Open Access Journals (Sweden)

    Kea-Tiong Tang

    2013-10-01

    Full Text Available Electronic noses have potential applications in daily life, but are restricted by their bulky size and high price. This review focuses on the use of chemiresistive gas sensors, metal-oxide semiconductor gas sensors and conductive polymer gas sensors in an electronic nose for system integration to reduce size and cost. The review covers the system design considerations and the complementary metal-oxide-semiconductor integrated technology for a chemiresistive gas sensor electronic nose, including the integrated sensor array, its readout interface, and pattern recognition hardware. In addition, the state-of-the-art technology integrated in the electronic nose is also presented, such as the sensing front-end chip, electronic nose signal processing chip, and the electronic nose system-on-chip.

  15. Observation of Electron Cloud Instabilities and Emittance Dilution at the Cornell Electron-Positron Storage Ring Test Accelerator

    International Nuclear Information System (INIS)

    Holtzapple, R.L.; Campbell, R.C.; McArdle, K.E.; Miller, M.I.; Totten, M.M.; Tucker, S.L.; Billing, M.G.; Dugan, G.F.; Ramirez, G.A.; Sonnad, K.G.; Williams, H.A.; Flanagan, J.; Palmer, M.A.

    2016-01-01

    Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnotics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud with stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains; 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this paper we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions

  16. Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays

    Science.gov (United States)

    Lo, Hsiang-Yu; Li, Yiming; Tsai, Chih-Hao; Pan, Fu-Ming

    2008-04-01

    We study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source.

  17. Low emittance design of the electron gun and the focusing channel of the Compact Linear Collider drive beam

    Directory of Open Access Journals (Sweden)

    M. Dayyani Kelisani

    2017-04-01

    Full Text Available For the Compact Linear Collider project at CERN, the power for the main linacs is extracted from a drive beam generated from a high current electron source. The design of the electron source and its subsequent focusing channel has a great impact on the beam dynamic considerations of the drive beam. We report the design of a thermionic electron source and the subsequent focusing channels with the goal of production of a high quality beam with a very small emittance.

  18. Characterization of electron bunches from field emitter array cathodes for use in next-generation x-ray free electron lasers

    International Nuclear Information System (INIS)

    Leemann, S. C.

    2007-01-01

    PSI is interested in developing an x-ray free electron laser (X-FEL) as a companion radiation source to the existing Swiss Light Source. In order to achieve radiation wavelengths as low as 1 Α, the X-FEL requires excellent electron beam quality and high beam energy. The energy requirements and thus the size and cost of the project can be reduced considerably if an ultra-low emittance electron source is developed. Therefore PSI has started the Low Emittance Gun Project with the aim to design a novel type of electron source that will deliver an electron beam with unprecedented emittance at high peak currents to the linear accelerator of the proposed X-FEL. A source candidate for such a gun is field emission from cold cathodes. In order to gain first experience with field emission guns, investigate the dynamics of space charge dominated electron beams and to develop diagnostics capable of resolving ultra-low emittances, it was decided to build a 100 keV DC gun test stand. In the scope of this thesis, the test stand has been designed, assembled and commissioned. For the first time, transverse phase space measurements of bunches emitted by field emitter arrays in pulsed DC accelerating fields have been performed. (author)

  19. Effects of pulse-length and emitter area on virtual cathode formation in electron guns

    International Nuclear Information System (INIS)

    Valfells, Agust; Feldman, D.W.; Virgo, M.; O'Shea, P.G.; Lau, Y.Y.

    2002-01-01

    Recent experiments at the University of Maryland using photoemission from a dispenser cathode have yielded some interesting results regarding the effects of the area of emission and of the ratio between the pulse length and the gap transit time on the amount of current that may be drawn from an electron gun before a virtual cathode forms. The experiments show that a much higher current density may be drawn from a short pulse or limited emitter area than is anticipated by the Child-Langmuir limiting current. There is also evidence that the current may be increased even after virtual cathode formation, which leads a distinction between a limiting current density and a current density critical for virtual cathode formation. The experiments have also yielded some interesting results on the longitudinal structure of the current pulse passed through the anode. Some empirical and theoretical scaling laws regarding the formation of virtual cathodes in an electron gun will be presented. This work was motivated by the needs of the University of Maryland Electron Ring (UMER) [P. G. O'Shea, M. Reiser, R. A. Kishek et al., Nucl. Instrum. Methods Phys. Res. A 464, 646 (2001)] where the goal is to generate pulses that are well-localized in time and space

  20. Polymeric and Molecular Materials for Advanced Organic Electronics

    Science.gov (United States)

    2014-10-20

    we were able to substantially lower the HOMOs while preserving excellent TFT hole transport, and investigated their use in bulk- hetero - junction ...metal oxide semiconductors, which are prepared by a low-temperature “combustion synthesis” route invented at NU under AFOSR support and published...98) v Prescribed by ANSI Std. Z39.18 Introduction. CMOS, p/n- Junction Devices, and Flexible Electronics Flexible/printed electronics is a

  1. Initial observations of high-charge, low-emittance electron beams at HIBAF (High Brightness Accelerator FEL)

    Energy Technology Data Exchange (ETDEWEB)

    Lumpkin, A.H.; Feldman, R.B.; Carsten, B.E.; Feldman, D.W.; Sheffield, R.L.; Stein, W.E.; Johnson, W.J.; Thode, L.E.; Bender, S.C.; Busch, G.E.

    1990-01-01

    We report our initial measurements of bright (high-charge, low-emittance) electron beams generated at the Los Alamos High Brightness Accelerator FEL (HIBAF) Facility. Normalized emittance values of less than 50 {pi} mm-mrad for charges ranging from 0.7 to 8.7 nC were obtained for single micropulses at a y-waist and at an energy of 14.7 MeV. These measurements were part of the commissioning campaign on the HIBAF photoelectric injector. Macropulse measurements have also been performed and are compared with PARMELA simulations. 5 refs., 8 figs., 3 tabs.

  2. Measurement of transverse emittance at the source of spin-polarized electrons at the S-DALINAC

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, Christian; Barday, Roman; Bonnes, Uwe; Eichhorn, Ralf; Enders, Joachim; Hessler, Christoph; Patalakha, Oleksandr; Platz, Markus; Poltoratska, Yuliya; Rick, Wolfgang [Institut fuer Kernphysik, TU Darmstadt (Germany); Ackermann, Wolfgang; Mueller, Wolfgang F.O.; Steiner, Bastian; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, TU Darmstadt (Germany)

    2008-07-01

    A new injector concept for 100 keV spin-polarized electrons (SPIN) at the S-DALINAC has been developed. The transverse emittance was measured for beam characterization. The emittance is a quantity concerning the quality of the beam, describing the phase space area. Determination of the emittance requires measurement of the beam profile and knowledge of the focal length of a beam focussing device. A wire scanner unit consisting of two 50 {mu}m diameter tungsten wires is used for the beam-profile measurement. Data analysis is performed by fitting a gaussian model distribution to estimate the 1{sigma} beam radius. Each determined beam width is correlated to the corresponding focal length of a magnetic lens, and a parabola fit is applied to calculate the parameters of the {sigma}-matrix. The square root of the determinant of the {sigma}-matrix defines the emittance. The results of the calculation are presented and the emittance is compared to theoretical estimates.

  3. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    Directory of Open Access Journals (Sweden)

    Richard Talman

    2009-01-01

    Full Text Available Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004PRABFM1098-440210.1103/PhysRevSTAB.7.100701; N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004; R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006, Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes: (i Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using TraFiC4* [A. Kabel et al., Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000NIMAER0168-900210.1016/S0168-9002(0000729-4] and ELEGANT [M. Borland, Argonne National Laboratory Report No. LS-287, 2000]. All three simulations are in fair agreement with the data except that the UAL simulation predicts a substantial dependence of horizontal emittance ϵ_{x} on beam width (as controlled by the lattice β_{x} function at the compressor location. This is consistent with the experimental observations, but inconsistent with other simulations. Excellent agreement concerning dependence of bunch energy loss on bunch length and magnetic field strength [L. Groening et al., in Proceedings of the Particle Accelerator Conference, Chicago, IL, 2001 (IEEE, New York, 2001, http://groening.home.cern/groening/csr_00.htm] confirms our understanding of the role played by coherent synchrotron radiation (CSR. (ii A controlled comparison is made between the predictions of the UAL code and those of CSRTrack [M. Dohlus and T. Limberg, in Proceedings of the

  4. Simulation study of electron cloud induced instabilities and emittance growth for the CERN Large Hadron Collider proton beam

    CERN Document Server

    Benedetto, Elena; Schulte, Daniel; Rumolo, Giovanni

    2005-01-01

    The electron cloud may cause transverse single-bunch instabilities of proton beams such as those in the Large Hadron Collider (LHC) and the CERN Super Proton Synchrotron (SPS). We simulate these instabilities and the consequent emittance growth with the code HEADTAIL, which models the turn-by-turn interaction between the cloud and the beam. Recently some new features were added to the code, in particular, electric conducting boundary conditions at the chamber wall, transverse feedback, and variable beta functions. The sensitivity to several numerical parameters has been studied by varying the number of interaction points between the bunch and the cloud, the phase advance between them, and the number of macroparticles used to represent the protons and the electrons. We present simulation results for both LHC at injection and SPS with LHC-type beam, for different electron-cloud density levels, chromaticities, and bunch intensities. Two regimes with qualitatively different emittance growth are observed: above th...

  5. Latest progress in gallium-oxide electronic devices

    Science.gov (United States)

    Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

    2018-02-01

    Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

  6. Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

    International Nuclear Information System (INIS)

    Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

    2014-01-01

    The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

  7. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram; Nath, Digbijoy N. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2016-05-09

    We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

  8. Investigation of slice emittance using an energy-chirped electron beam in a dispersive section for photo injector characterization at PITZ

    Energy Technology Data Exchange (ETDEWEB)

    Ivanisenko, Yevgeniy

    2012-06-15

    This work describes a transverse slice emittance diagnostics with an RMS temporal resolution down to 2 ps that was implemented at the Photo Injector Test facility in Zeuthen (PITZ). The measurements were performed for several bunch charges generated by a laser pulse that has a flat-top temporal profile of 21-22 ps FWHM duration. This diagnostics allows to study the beam projected emittance compensation with a solenoid magnetic field experimentally and therefore contributes to the beam emittance optimization for the needs of short wavelength linac-based FELs in particular. The diagnostics is based upon the usage of electron bunches which have a correlation between the longitudinal position and the momentum of the bunch particles. This property allows to convert the bunch longitudinal distribution into a transverse one in a dipole magnet. A slit with a narrow opening at the dipole exit selects a fraction of the particle ensemble, a slice, which emittance is analyzed at a screen downstream. Slit scan and quadrupole scan techniques can be used to measure the emittance of the slices. In the experiments it was found that the slice emittance values are 5-10% lower than the projected emittance values, indicating a good effectivity of the solenoid compensation. The emittance obtained using quadrupole scan technique has shown different results when compared to slit scan technique due to a beam halo. The observed beam halo in phase space contributes up to 40% of the emittance value while having only 10% of the bunch charge.

  9. Investigation of slice emittance using an energy-chirped electron beam in a dispersive section for photo injector characterization at PITZ

    International Nuclear Information System (INIS)

    Ivanisenko, Yevgeniy

    2012-06-01

    This work describes a transverse slice emittance diagnostics with an RMS temporal resolution down to 2 ps that was implemented at the Photo Injector Test facility in Zeuthen (PITZ). The measurements were performed for several bunch charges generated by a laser pulse that has a flat-top temporal profile of 21-22 ps FWHM duration. This diagnostics allows to study the beam projected emittance compensation with a solenoid magnetic field experimentally and therefore contributes to the beam emittance optimization for the needs of short wavelength linac-based FELs in particular. The diagnostics is based upon the usage of electron bunches which have a correlation between the longitudinal position and the momentum of the bunch particles. This property allows to convert the bunch longitudinal distribution into a transverse one in a dipole magnet. A slit with a narrow opening at the dipole exit selects a fraction of the particle ensemble, a slice, which emittance is analyzed at a screen downstream. Slit scan and quadrupole scan techniques can be used to measure the emittance of the slices. In the experiments it was found that the slice emittance values are 5-10% lower than the projected emittance values, indicating a good effectivity of the solenoid compensation. The emittance obtained using quadrupole scan technique has shown different results when compared to slit scan technique due to a beam halo. The observed beam halo in phase space contributes up to 40% of the emittance value while having only 10% of the bunch charge.

  10. Development of DNA-based radiopharmaceuticals carrying Auger-electron emitters for anti-gene radiotherapy

    International Nuclear Information System (INIS)

    Panyutin, I.G.; Winters, T.A.; Feinendegen, L.E.; Neumann, R.D.

    2000-01-01

    Targeting of radiation damage to specific DNA sequences is the essence of antigene radiotherapy. This technique also provides a tool to study molecular mechanisms of DNA repair on a defined, single radio damaged site. It was achieved such sequence-specific radio damage by combining the highly localized DNA damage produced by the decay of Auger-electron-emitters such as 125 I with the sequence-specific action of triplex-forming oligonucleotides (TFO). TFO complementary to polypurine-polypyrimidine regions of human genes were synthesized and labeled with 125 I-dCTP by the primer extension method. 125 I-TFO were delivered into cells with several delivery systems. In addition, human enzymes capable of supporting DNA single-strand-break repair were isolated and assessed for their role in the repair of this lesion. Also, the mutagenicity and repairability of 125 I-TFO-induced double strand breaks (DSB) were assessed by repair of plasmid possessing a site-specific DSB lesion. Using plasmids containing target polypurine-polypyrimidine tracts, it was obtained the fine structure of sequence-specific DNA breaks produced by decay of 125 I with single-nucleotide resolution. It was showed that the designed 125 I-TFO in nanomolar concentrations could bind to and introduce double-strand breaks into the target sequences in situ, i.e., within isolated nuclei and intact digitonin-permeabilized cells. It was also showed 125 I-TFO-induced DSB to be highly mutagenic lesions resulting in a mutation frequency of nearly 80%, with deletions comprising the majority of mutations. The results obtained demonstrate the ability of 125 I-TFO to target specific sequences in their natural environment - within eukaryotic nucleus. Repair of 125 I-TFO-induced DNA damage should typically result in mutagenic gene inactivation

  11. Measurement of concentrations of {gamma}-ray emitters induced in the concrete shield of the JAERI electron linac facility

    Energy Technology Data Exchange (ETDEWEB)

    Endo, Akira; Kawasaki, Katsuya; Kikuchi, Masamitsu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Harada, Yasunori

    1997-07-01

    Measurement has been made to study distributions of {gamma}-ray emitters induced in the concrete shield of the JAERI electron linac facility. Core boring was carried out at seven positions to take samples from the concrete shield, and {gamma}-ray counting rates and {gamma}-ray spectra of these samples were measured with a NaI(Tl) detector and a Ge semiconductor detector, respectively. The following radionuclides were detected in the concrete samples: {sup 60}Co, {sup 134}Cs, {sup 152}Eu and {sup 154}Eu generated through thermal neutron capture reaction, and {sup 22}Na and {sup 54}Mn generated through nuclear reactions by bremsstrahlung and fast neutrons. The relation between the distributions of {gamma}-ray emitters, as a function of the depth of concrete, and the positions of core boring is discussed. (author)

  12. Double Emittance Exchanger as a Bunch Compressor for the MaRIE XFEL electron beam line at 1GeV

    Energy Technology Data Exchange (ETDEWEB)

    Malyzhenkov, Alexander [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Northern Illinois Univ., DeKalb, IL (United States); Yampolsky, Nikolai [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carlsten, Bruce Eric [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-09-22

    We demonstrate an alternative realization of a bunch compressor (specifically the second bunch compressor for the MaRIE XFEL beamline, 1GeV electron energy) using a double emittance exchanger (EEX) and a telescope in the transverse phase space.We compare our results with a traditional bunch compressor realized via chicane, taking into account the nonlinear dynamics, Coherent Synchrotron Radiation (CSR) and Space Charge (SC) effects. In particular, we use the Elegant code for tracking particles through the beam line and analyze the eigen-emittances evolution to separate the influence of the CSR/SC effects from the nonlinear dynamics effects. We optimize the scheme parameters to reach a desirable compression factor and minimize the emittance growth. We observe dominant CSR-effects in our scheme resulting in critical emittance growth and introduce alternative version of an emittance exchanger with a reduced number of bending magnets to minimize the impact of CSR effects.

  13. Electron emission from nano-structured carbon composite materials and fabrication of high-quality electron emitters by using plasma technology

    International Nuclear Information System (INIS)

    Hiraki, H.; Hiraki, A.; Jiang, N.; Wang, H. X.

    2006-01-01

    Many trials have been done to fabricate high-quality electron-emitters from nano-composite carbon materials (such as nano-diamond, carbon nano tubes and others) by means of a variety of plasma chemical-vapor-deposition (CVD) techniques. Based upon the mechanism of electron emission, we have proposed several strategic guide lines for the fabrication of good emitters. Then, following these lines, several types of emitters were tried. One of the emitters has shown a worldclass, top ranking for fabricating very bright lamps: namely, a low turn-on voltage (0.5 ∼ 1 V/μm to induce 10 μA/cm 2 emission current) to emit a 1 mA/cm 2 current at 3 V/μm and 100 mA/cm 2 current at a slightly higher applied voltage. The bright lamps are Mercury-free fluorescence lamps to exhibit brightness of ∼10 5 cd/m 2 with high efficiency of ∼100 lm/w.

  14. An asymmetric emittance electron source for the GALAXIE dielectric-laser accelerator injector

    Energy Technology Data Exchange (ETDEWEB)

    Valloni, A.; Cahill, A.; Fukusawa, A.; Musumeci, P.; Spataro, B.; Yakub, A.; Rosenzweig, J. B. [Dept. of Physics and Astronomy, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90034 (United States); Accelerator Division, Laboratori Nazionali di Frascati (INFN-LNF), Via E. Fermi 40, Frascati (RM) 00044 (Italy); Dept. of Physics and Astronomy, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90034 (United States)

    2012-12-21

    The GALAXIE project is a program to develop an all-optical, very high field accelerator and undulator integrated SASE FEL system based on dielectric laser-excited structures that support >GV/m fields. These structures are very wide in one direction to allow adequate charge given beam loading considerations, but also having small (subwavelength) apertures in the narrow direction. Such small vertical dimensions yield strict restrictions on the emittance in this direction, while no such constraint exists in the wide transverse direction. However, the overall beam brightness is restricted by the performance requirements on the FEL. To meet these demands, we are studying a very high field gun with a magnetized cathode, yielding a beam with angular momentum content. This beam is then subject to a skew-quad triplet that splits the emittances; this process is reversed to give a round beam after acceleration. This symmetric emittance beam avoids gain-degrading multiple-transverse-mode operation of the FEL, which also demands that the effects of the angular momentum in the beam be mitigated. In this paper we discuss the RF design of an X-band gun to be operated at {approx}200 MV/m peak field giving a 1 pC magnetized beam with unprecedented brightness. We examine the design of the focusing and skew-quad systems, investigating the associated beam dynamics and efficacy of emittance splitting.

  15. Photoelectron linear accelerator for producing a low emittance polarized electron beam

    Science.gov (United States)

    Yu, David U.; Clendenin, James E.; Kirby, Robert E.

    2004-06-01

    A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

  16. Emittance growth of an electron beam in a periodic channel due to transfer of longitudinal energy to transverse energy

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1998-01-01

    Most discussions about emittance growth and halo production for an intense electron beam in a periodic focusing channel assume that the total transverse energy is constant (or, in other words, that the transverse and longitudinal Hamiltonians are separable). Previous analyses that include variations in the total transverse energy are typically based on a transverse-longitudinal coupling that is either from two-dimensional space-charge modes or particle-particle Coulomb collisions. With the space-charge modes, the energy exchange between the transverse and longitudinal directions is periodic, and of constant magnitude. The total energy transfer for the case of the Coulomb collisions is negligible. This limited increase of energy in the transverse direction from these other effects will limit the amount of transverse emittance growth possible. In this paper, the authors investigate a mechanism in which there is a continual transfer of energy from the longitudinal direction to the transverse direction, leading to essentially unlimited potential transverse emittance growth. This mechanism is caused by an asymmetry of the beam's betatron motion within the periodic focusing elements. This analysis is based on thermodynamic principles. This mechanism exists for both solenoids and quadrupole focusing, although only solenoid focusing is studied here

  17. Large area and flexible electronics

    CERN Document Server

    Caironi, Mario

    2015-01-01

    From materials to applications, this ready reference covers the entire value chain from fundamentals via processing right up to devices, presenting different approaches to large-area electronics, thus enabling readers to compare materials, properties and performance.Divided into two parts, the first focuses on the materials used for the electronic functionality, covering organic and inorganic semiconductors, including vacuum and solution-processed metal-oxide semiconductors, nanomembranes and nanocrystals, as well as conductors and insulators. The second part reviews the devices and applicatio

  18. Emittance study of a 28 GHz electron cyclotron resonance ion source for the Rare Isotope Science Project superconducting linear accelerator.

    Science.gov (United States)

    Park, Bum-Sik; Hong, In-Seok; Jang, Ji-Ho; Jin, Hyunchang; Choi, Sukjin; Kim, Yonghwan

    2016-02-01

    A 28 GHz electron cyclotron resonance (ECR) ion source is being developed for use as an injector for the superconducting linear accelerator of the Rare Isotope Science Project. Beam extraction from the ECR ion source has been simulated using the KOBRA3-INP software. The simulation software can calculate charged particle trajectories in three dimensional complex magnetic field structures, which in this case are formed by the arrangement of five superconducting magnets. In this study, the beam emittance is simulated to understand the effects of plasma potential, mass-to-charge ratio, and spatial distribution. The results of these simulations and their comparison to experimental results are presented in this paper.

  19. Space Charge Correction on Emittance Measurement of Low Energy Electron Beams

    Energy Technology Data Exchange (ETDEWEB)

    Treado, Colleen J.; /Massachusetts U., Amherst

    2012-09-07

    The goal of any particle accelerator is to optimize the transport of a charged particle beam along a set path by confining the beam to a small region close to the design trajectory and directing it accurately along the beamline. To do so in the simplest fashion, accelerators use a system of magnets that exert approximately linear electromagnetic forces on the charged beam. These electromagnets bend the beam along the desired path, in the case of bending magnets, and constrain the beam to the desired area through alternating focusing and defocusing effects, in the case of quadrupole magnets. We can model the transport of such a beam through transfer matrices representing the actions of the various beamline elements. However, space charge effects, produced from self electric fields within the beam, defocus the beam and must be accounted for in the calculation of beam emittance. We present below the preliminary results of a MATLAB code built to model the transport of a charged particle beam through an accelerator and measure the emittance under the influence of space charge effects. We demonstrate the method of correctly calculating the emittance of a beam under space charge effects using a least square fit to determine the initial properties of the beam given the beam size measured at a specific point after transport.

  20. Emittance preservation

    Energy Technology Data Exchange (ETDEWEB)

    Kain, V; Arduini, G; Goddard, B; Holzer, B J; Jowett, J M; Meddahi, M; Mertens, T; Roncarolo, F; Schaumann, M; Versteegen, R; Wenninger, J [European Organization for Nuclear Research, Geneva (Switzerland)

    2012-07-01

    Emittance measurements during the LHC proton run 2011 indicated a blow-up of 20 % to 30 % from LHC injection to collisions. This presentation will show the emittance preservation throughout the different parts of the LHC cycle and discuss the current limitations on emittance determination. An overview of emittance preservation through the injector complex as function of bunch intensity will also be given. Possible sources for the observed blow-up and required tests in 2012 will be presented. Possible improvements of emittance diagnostics and analysis tools for 2012 will be shown.

  1. Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

    Science.gov (United States)

    Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

    2017-02-01

    Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

  2. Generating femtosecond X-ray pulses using an emittance-spoiling foil in free-electron lasers

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Y., E-mail: ding@slac.stanford.edu; Coffee, R.; Decker, F.-J.; Emma, P.; Field, C.; Huang, Z.; Krejcik, P.; Krzywinski, J.; Loos, H.; Lutman, A.; Marinelli, A.; Maxwell, T. J.; Turner, J. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Behrens, C. [Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg (Germany); Helml, W. [Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany)

    2015-11-09

    Generation of femtosecond to sub-femtosecond pulses is attracting much attention in X-ray free-electron laser user community. One method is to use a slotted, emittance-spoiling foil which was proposed before (P. Emma et al., Phys. Rev. Lett. 92, 074801 (2004)) and has been widely used at the Linac Coherent Light Source. Direct experimental characterization of the slotted-foil performance was previously unfeasible due to a lack of appropriate diagnostics. With a recently installed X-band radio-frequency transverse deflector, we are able to characterize the electron bunch spoiling effect and X-ray pulse when using the slotted foil. We show that few-femtosecond X-ray pulses are generated with flexible control of the single-pulse duration or double-pulse separation with comparison to the theoretical model.

  3. Transverse emittance-preserving arc compressor for high-brightness electron beam-based light sources and colliders

    Science.gov (United States)

    Di Mitri, S.; Cornacchia, M.

    2015-03-01

    Bunch length magnetic compression is used in high-brightness linacs driving free-electron lasers (FELs) and particle colliders to increase the peak current of the injected beam. To date, it is performed in dedicated insertions made of few degrees bending magnets and the compression factor is limited by the degradation of the beam transverse emittance owing to emission of coherent synchrotron radiation (CSR). We reformulate the known concept of CSR-driven optics balance for the general case of varying bunch length and demonstrate, through analytical and numerical results, that a 500 pC charge beam can be time-compressed in a periodic 180 deg arc at 2.4 GeV beam energy and lower, by a factor of up to 45, reaching peak currents of up to 2 kA and with a normalized emittance growth at the 0.1 μ \\text{m} rad level. The proposed solution offers new schemes of beam longitudinal gymnastics; an application to an energy recovery linac driving FEL is discussed.

  4. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  5. Characterization of commercial MOSFETS electron dosimetry

    International Nuclear Information System (INIS)

    Carvajal, M. A.; Simancas, F.; Guirado, D.; Banqueri, J.; Vilches, M.; Lallena, A. M.; Palma, A. J.

    2011-01-01

    In recent years there have been commercial dosimetry devices based on transistors Metal-Oxide-Semiconductor (MOSFET) having a number of advantages over traditional systems for dosimetry in medical applications. These include the portability of the sensor element and a reading process quick and relatively simple dose, linearity, and so on. The use of electron beams is important in modern radiotherapy include its use in intra-operative radiotherapy (RIO). This paper presents an initial characterization of different business models MOSFET, not specific for radiation detection, to demonstrate their potential as sensors for electron beam dosimetry. (Author)

  6. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    International Nuclear Information System (INIS)

    Hong, Lin-Ann; Vu, Hoang-Tuan; Juang, Fuh-Shyang; Lai, Yun-Jr; Yeh, Pei-Hsun; Tsai, Yu-Sheng

    2013-01-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm 2 , and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  7. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Lin-Ann; Vu, Hoang-Tuan [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Juang, Fuh-Shyang, E-mail: fsjuang@seed.net.tw [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Lai, Yun-Jr [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Yeh, Pei-Hsun [Raystar Optronics, Inc., 5F No. 25, Keya Rd. Daya Township, Taichung County, Taiwan (China); Tsai, Yu-Sheng [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China)

    2013-10-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm{sup 2}, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  8. Manipulating the Electronic Excited State Energies of Pyrimidine-Based Thermally Activated Delayed Fluorescence Emitters To Realize Efficient Deep-Blue Emission.

    Science.gov (United States)

    Komatsu, Ryutaro; Ohsawa, Tatsuya; Sasabe, Hisahiro; Nakao, Kohei; Hayasaka, Yuya; Kido, Junji

    2017-02-08

    The development of efficient and robust deep-blue emitters is one of the key issues in organic light-emitting devices (OLEDs) for environmentally friendly, large-area displays or general lighting. As a promising technology that realizes 100% conversion from electrons to photons, thermally activated delayed fluorescence (TADF) emitters have attracted considerable attention. However, only a handful of examples of deep-blue TADF emitters have been reported to date, and the emitters generally show large efficiency roll-off at practical luminance over several hundreds to thousands of cd m -2 , most likely because of the long delayed fluorescent lifetime (τ d ). To overcome this problem, we molecularly manipulated the electronic excited state energies of pyrimidine-based TADF emitters to realize deep-blue emission and reduced τ d . We then systematically investigated the relationships among the chemical structure, properties, and device performances. The resultant novel pyrimidine emitters, called Ac-XMHPMs (X = 1, 2, and 3), contain different numbers of bulky methyl substituents at acceptor moieties, increasing the excited singlet (E S ) and triplet state (E T ) energies. Among them, Ac-3MHPM, with a high E T of 2.95 eV, exhibited a high external quantum efficiency (η ext,max ) of 18% and an η ext of 10% at 100 cd m -2 with Commission Internationale de l'Eclairage chromaticity coordinates of (0.16, 0.15). These efficiencies are among the highest values to date for deep-blue TADF OLEDs. Our molecular design strategy provides fundamental guidance to design novel deep-blue TADF emitters.

  9. Free form CMOS electronics: Physically flexible and stretchable

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-07

    Free form (physically flexible and stretchable) electronics can be used for applications which are unexplored today due to the rigid and brittle nature of the state-of-the-art electronics. Therefore, we show integration strategy to rationally design materials, processes and devices to transform advanced complementary metal oxide semiconductor (CMOS) electronics into flexible and stretchable one while retaining their high performance, energy efficiency, ultra-large-scale-integration (ULSI) density, reliability and performance over cost benefit to expand its applications for wearable, implantable and Internet-of-Everything electronics.

  10. Effect of 1MeV electron beam on transistors and circuits

    International Nuclear Information System (INIS)

    Lee, Tae Hoon

    1998-02-01

    It has been known that semiconductor devices operating in a radiation environment exhibited significant alterations of their electrical responses. Since an electron beam bombardment produces lattice damage in Si and charged defects in SiO 2 , several electrical parameters of transistors exhibit significant changes. Those parameters are the current gain of BJT (Bipolar Junction Transistor) and the threshold voltage of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The degradation of transistors brings about that of circuits. This paper presents the results of experiments and simulations performed to study the effects of 1MeV electron beam irradiation on selected silicon transistors and circuits. For BJTs, the current gains of npn (2N3904) and pnp (2N3906) linearly decreased as the irradiation dose increased, and from this result, the damage constants, Ks were obtained as 13.65 for 2N3904 and 22.52 for 2N3906 in MGy, indicating a more stable operation in the electron radiation environment for pnp than that for npn. The decrease of current gain was due to that of minority-carrier lifetime in the base region. For MOSFETs (CD4007s), the threshold voltages of NMOS and PMOS shifted to the lower values, which was resulted from the accumulation of charge in SiO 2 . The charges could be categorized into fixed oxide charge and interfacial trap charge. From experimental results, the amounts of the induced charges could be quantitatively estimated. These degradations of transistors brought about the decrease in the voltage gain of CE (Common Emitter) amplifier and the shifts in the inverting voltage of inverter. Additionally, PSpice simulations of these circuits were carried out by modeling of irradiated transistors. The comparison of simulation with experiment showed the relatively good agreement of simulation for the degradation of circuits after irradiation

  11. Electron beam and rf characterization of a low-emittance X-band photoinjector

    Directory of Open Access Journals (Sweden)

    D. J. Gibson

    2001-09-01

    Full Text Available Detailed experimental studies of the first operation of an X-band (8.547 GHz rf photoinjector are reported. The rf characteristics of the device are first described, as well as the tuning technique used to ensure operation of the 11/2-cell rf gun in the balanced π-mode. The characterization of the photoelectron beam produced by the rf gun includes: measurements of the bunch charge as a function of the laser injection phase, yielding information about the quantum efficiency of the Cu photocathode ( 2×10^{-5} for a surface field of 100 MV/m; measurements of the beam energy (1.5–2 MeV and relative energy spread ( Δγ/γ_{0}=1.8±0.2% using a magnetic spectrometer; measurements of the beam 90% normalized emittance, which is found to be ɛ_{n}=1.65π mm mrad for a charge of 25 pC; and measurements of the bunch duration ( <2 ps. Coherent synchrotron radiation experiments at Ku-band and Ka-band confirm the extremely short duration of the photoelectron bunch and a peak power scaling quadratically with the bunch charge.

  12. Low emittance photoinjectors

    International Nuclear Information System (INIS)

    Ferrario, Massimo

    2001-01-01

    Photon colliders require high charge polarized electron beams with very low normalized emittances, possibly lower than the actual damping rings design goals. Recent analytical and numerical efforts in understanding beam dynamics in RF photoinjectors have raised again the question as to whether the performances of an RF electron gun based injector could be competitive with respect to a damping ring. As a matter of discussion we report in this paper the most recent results concerning low emittance photoinjector designs: the production of polarized electron beams by DC and/or RF guns is illustrated together with space charge compensation techniques and thermal emittance effects. New ideas concerning multi-gun injection system and generation of flat beams by RF gun are also discussed

  13. An Ultra-Bright Pulsed Electron Beam with Low Longitudinal Emittance

    CERN Document Server

    Zolotorev, Max S; Denes, Peter; Heifets, Samuel; Hussain, Zahid; Lebedev, Gennadi; Lidia, Steven M; Robin, David; Sannibale, Fernando; Schönlein, Robert W; Vogel, Robert; Wan, Weishi

    2005-01-01

    We describe a novel scheme for an electron source in the 10 - 100 eV range with the capability of approaching the brightness quantum-limit and of lowering the effective temperature of the electrons orders of magnitude with respect to existing sources. Such a device can open the way for a wide range of novel applications that utilize angstrom-scale spatial resolution and ?eV-scale energy resolution. Possible examples include electron microscopy, electron holography, and investigations of dynamics on a picosecond time scale using pump-probe techniques. In this paper we describe the concepts for such a source including a complete and consistent set of parameters for the construction of a real device based on the presented scheme.

  14. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  15. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

    2011-01-01

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  16. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  17. Experimental Development of Low-emittance Field-emission Electron Sources

    Energy Technology Data Exchange (ETDEWEB)

    Lueangaranwong, A. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Buzzard, C. [Northern Illinois Univ., DeKalb, IL (United States); Divan, R. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Korampally, V. [Northern Illinois Univ., DeKalb, IL (United States); Piot, P. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2016-10-10

    Field emission electron sources are capable of extreme brightness when excited by static or time-dependent electro- magnetic fields. We are currently developing a cathode test stand operating in DC mode with possibility to trigger the emission using ultra-short (~ 100-fs) laser pulses. This contribution describes the status of an experiment to investigate field-emission using cathodes under development at NIU in collaboration with the Argonne’s Center for Nanoscale Materials.

  18. Use of water vapor for suppressing the growth of unstable low-{kappa} interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.P. [Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 (China); Zou, X. [School of Electromachine and Architecture Engineering, Jianghan University, Wuhan, 430056 (China); Lai, P.T. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)], E-mail: laip@eee.hku.hk; Li, C.X.; Chan, C.L. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)

    2009-03-02

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N{sub 2}, NH{sub 3}, NO and N{sub 2}O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO{sub x} interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N{sub 2} anneal, the wet NH{sub 3}, NO and N{sub 2}O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO{sub x}N{sub y} interlayer. Among the eight anneals, the wet N{sub 2} anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10{sup 11} eV{sup -1} cm{sup -2} and gate leakage current of 2.7 x 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V.

  19. Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    International Nuclear Information System (INIS)

    Xu, J.P.; Zou, X.; Lai, P.T.; Li, C.X.; Chan, C.L.

    2009-01-01

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2 , NH 3 , NO and N 2 O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3 , NO and N 2 O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO x N y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10 11 eV -1 cm -2 and gate leakage current of 2.7 x 10 -4 A/cm 2 at V g = 1 V

  20. Development of low emittance high brightness electron beams and rf accelerating structures

    International Nuclear Information System (INIS)

    Pellegrini, C.

    1991-01-01

    The main goals of this project were the construction of an S-band RF photoinjector for the production of a high brightness electron beam, and the development of a new type of RF accelerator structure; the Plane wave transformer. By the end of October 1991 the photoinjector had been built, its RF characteristics had been measured at low power, and an initial test of the gun at high RF power had been done. The Plane Wave Transformer had also been built and tested at lower power. In both cases the results obtained are mostly in agreement with the expected and calculated behavior

  1. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  2. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    CERN Document Server

    Talman, Richard; Stulle, Frank

    2009-01-01

    Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries) string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004); N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004); R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006), Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes): (i) Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using trafic4* [A. Kabel et al., Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000)] and elegant [M. Borland, Argonne National Laboratory...

  3. Evaluation of new iodinated acridine derivatives for targeted radionuclide therapy of melanoma using {sup 125}I, an Auger electron emitter

    Energy Technology Data Exchange (ETDEWEB)

    Gardette, M.; Papon, J.; Bonnet, M.; Labarre, P.; Miot-Noirault, E.; Madelmont, J. C.; Chezal, J. M.; Moins, N. [UMR 990, INSERM, Universite d' Auvergne, Clermont-Ferrand (France); Desbois, N. [EA 3660, Universite de Bourgogne, Dijon (France); Wu, T. D.; Guerquin-Kern, J. L. [U 759 INSERM, Institute Curie, Orsay (France)

    2013-06-01

    The full text of the publication follows. The increasing incidence of melanoma and the lack of effective therapy on the disseminated form have led to an urgent need for new specific therapies. Several iodo-benzamides or analogs are known to possess specific affinity for melanoma tissue. New hetero-aromatic derivatives have been designed with a cytotoxic moiety and termed DNA intercalating agents. These compounds could be applied in targeted radionuclide therapy using {sup 125}I, Auger electrons emitter which gives high-energetic localized irradiation. Two iodinated acridine derivatives have been reported to present an in vivo kinetic profile conducive to application in targeted radionuclide therapy. The aim of the present study was to perform a preclinical evaluation of these compounds. The DNA intercalating property was confirmed for both compounds. After radiolabeling with {sup 125}I, the two compounds induced in vitro a significant radiotoxicity on B16F0 melanoma cells. The acridine compound, ICF01040, appeared more radio toxic than the acridone compound, ICF01035. While cellular uptake was similar for both compounds, SIMS analysis and in vitro protocol showed a stronger affinity for melanin with ICF01035, which was able to induce a predominant scavenging process in the melanosome and restrict access to the nucleus. Nevertheless, an important radiotoxicity was measured for the two compounds while the nuclear accumulation was low. Indeed, even if nuclear localization remains the main target sensitive to Auger electrons, the cell membrane remains sensitive to {sup 125}I decays. So, these compounds may induce secondary toxic effects of irradiation, such as membrane lipid damage. Conducted to current experiments are evaluate such hypothesis. Taken together, these results suggest that ICF01040 is a better candidate for application in targeted radionuclide therapy using {sup 125}I. The next step will be in vivo evaluation, where high tumoral vectorization gives

  4. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhry, Amit; Sangwan, S. [UIET, Panjab University, Chandigarh (India); Roy, J. N., E-mail: amit_chaudhry01@yahoo.com [Solar Semiconductro Pvt. Ltd, Hyderabad (India)

    2011-05-15

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  5. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    International Nuclear Information System (INIS)

    Chaudhry, Amit; Sangwan, S.; Roy, J. N.

    2011-01-01

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  6. Thermoelectric power and topological transitions in quasi-two-dimensional electronic systems

    International Nuclear Information System (INIS)

    Blanter, Ya.M.; Pantsulaya, A.V.; Varlamov, A.A.

    1991-05-01

    Electron-impurity relaxation time and the thermoelectric power (TEP) of quasi-two-dimensional electron gas are calculated. Two cases are discussed: the isotropic spectrum and the electronic topological transition (ETT) of the ''neck-breaking'' type. Methods of thermal diagramatic technique are used for the calculation. It is found that the TEP in the vicinity of the ETT greatly exceeds its background value. The results of experimental investigations of the TEP in the metal-oxide-semiconductor structures are compared with the predictions of the proposed theory. (author). 17 refs, 5 figs

  7. K-band single-chip electron spin resonance detector.

    Science.gov (United States)

    Anders, Jens; Angerhofer, Alexander; Boero, Giovanni

    2012-04-01

    We report on the design, fabrication, and characterization of an integrated detector for electron spin resonance spectroscopy operating at 27 GHz. The microsystem, consisting of an LC-oscillator and a frequency division module, is integrated onto a single silicon chip using a conventional complementary metal-oxide-semiconductor technology. The achieved room temperature spin sensitivity is about 10(8)spins/G Hz(1/2), with a sensitive volume of about (100 μm)(3). Operation at 77K is also demonstrated. Copyright © 2012 Elsevier Inc. All rights reserved.

  8. High-temperature complementary metal oxide semiconductors (CMOS)

    International Nuclear Information System (INIS)

    McBrayer, J.D.

    1979-10-01

    Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300 0 C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed

  9. The low-energy β(-) and electron emitter (161)Tb as an alternative to (177)Lu for targeted radionuclide therapy.

    Science.gov (United States)

    Lehenberger, Silvia; Barkhausen, Christoph; Cohrs, Susan; Fischer, Eliane; Grünberg, Jürgen; Hohn, Alexander; Köster, Ulli; Schibli, Roger; Türler, Andreas; Zhernosekov, Konstantin

    2011-08-01

    The low-energy β(-) emitter (161)Tb is very similar to (177)Lu with respect to half-life, beta energy and chemical properties. However, (161)Tb also emits a significant amount of conversion and Auger electrons. Greater therapeutic effect can therefore be expected in comparison to (177)Lu. It also emits low-energy photons that are useful for gamma camera imaging. The (160)Gd(n,γ)(161)Gd→(161)Tb production route was used to produce (161)Tb by neutron irradiation of massive (160)Gd targets (up to 40 mg) in nuclear reactors. A semiautomated procedure based on cation exchange chromatography was developed and applied to isolate no carrier added (n.c.a.) (161)Tb from the bulk of the (160)Gd target and from its stable decay product (161)Dy. (161)Tb was used for radiolabeling DOTA-Tyr3-octreotate; the radiolabeling profile was compared to the commercially available n.c.a. (177)Lu. A (161)Tb Derenzo phantom was imaged using a small-animal single-photon emission computed tomography camera. Up to 15 GBq of (161)Tb was produced by long-term irradiation of Gd targets. Using a cation exchange resin, we obtained 80%-90% of the available (161)Tb with high specific activity, radionuclide and chemical purity and in quantities sufficient for therapeutic applications. The (161)Tb obtained was of the quality required to prepare (161)Tb-DOTA-Tyr3-octreotate. We were able to produce (161)Tb in n.c.a. form by irradiating highly enriched (160)Gd targets; it can be obtained in the quantity and quality required for the preparation of (161)Tb-labeled therapeutic agents. Copyright © 2011 Elsevier Inc. All rights reserved.

  10. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    Science.gov (United States)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  11. Shielding in ungated field emitter arrays

    Energy Technology Data Exchange (ETDEWEB)

    Harris, J. R. [U.S. Navy Reserve, Navy Operational Support Center New Orleans, New Orleans, Louisiana 70143 (United States); Jensen, K. L. [Code 6854, Naval Research Laboratory, Washington, D.C. 20375 (United States); Shiffler, D. A. [Directed Energy Directorate, Air Force Research Laboratory, Albuquerque, New Mexico 87117 (United States); Petillo, J. J. [Leidos, Billerica, Massachusetts 01821 (United States)

    2015-05-18

    Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can be used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.

  12. FACET Emittance Growth

    Energy Technology Data Exchange (ETDEWEB)

    Frederico, J; Hogan, M.J.; Nosochkov, Y.; Litos, M.D.; Raubenheimer, T.; /SLAC

    2011-04-05

    FACET, the Facility for Advanced Accelerator and Experimental Tests, is a new facility being constructed in sector 20 of the SLAC linac primarily to study beam driven plasma wakefield acceleration. The FACET beamline consists of a chicane and final focus system to compress the 23 GeV, 3.2 nC electron bunches to {approx}20 {micro}m long and {approx}10 {micro}m wide. Simulations of the FACET beamline indicate the short-duration and large, 1.5% rms energy spread beams may suffer a factor of four emittance growth from a combination of chromaticity, incoherent synchrotron radiation (ISR), and coherent synchrotron radiation (CSR). Emittance growth is directly correlated to head erosion in plasma wakefield acceleration and is a limiting factor in single stage performance. Studies of the geometric, CSR, and ISR components are presented. Numerical calculation of the rms emittance can be overwhelmed by long tails in the simulated phase space distributions; more useful definitions of emittance are given. A complete simulation of the beamline is presented as well, which agrees with design specifications.

  13. FACET Emittance Growth

    International Nuclear Information System (INIS)

    Frederico, Joel

    2011-01-01

    FACET, the Facility for Advanced Accelerator and Experimental Tests, is a new facility being constructed in sector 20 of the SLAC linac primarily to study beam driven plasma wakefield acceleration. The FACET beamline consists of a chicane and final focus system to compress the 23 GeV, 3.2 nC electron bunches to ∼20 (micro)m long and ∼10 (micro)m wide. Simulations of the FACET beamline indicate the short-duration and large, 1.5% rms energy spread beams may suffer a factor of four emittance growth from a combination of chromaticity, incoherent synchrotron radiation (ISR), and coherent synchrotron radiation (CSR). Emittance growth is directly correlated to head erosion in plasma wakefield acceleration and is a limiting factor in single stage performance. Studies of the geometric, CSR, and ISR components are presented. Numerical calculation of the rms emittance can be overwhelmed by long tails in the simulated phase space distributions; more useful definitions of emittance are given. A complete simulation of the beamline is presented as well, which agrees with design specifications.

  14. Meat Quality Assessment by Electronic Nose (Machine Olfaction Technology

    Directory of Open Access Journals (Sweden)

    Sundar Balasubramanian

    2009-07-01

    Full Text Available Over the last twenty years, newly developed chemical sensor systems (so called “electronic noses” have made odor analyses possible. These systems involve various types of electronic chemical gas sensors with partial specificity, as well as suitable statistical methods enabling the recognition of complex odors. As commercial instruments have become available, a substantial increase in research into the application of electronic noses in the evaluation of volatile compounds in food, cosmetic and other items of everyday life is observed. At present, the commercial gas sensor technologies comprise metal oxide semiconductors, metal oxide semiconductor field effect transistors, organic conducting polymers, and piezoelectric crystal sensors. Further sensors based on fibreoptic, electrochemical and bi-metal principles are still in the developmental stage. Statistical analysis techniques range from simple graphical evaluation to multivariate analysis such as artificial neural network and radial basis function. The introduction of electronic noses into the area of food is envisaged for quality control, process monitoring, freshness evaluation, shelf-life investigation and authenticity assessment. Considerable work has already been carried out on meat, grains, coffee, mushrooms, cheese, sugar, fish, beer and other beverages, as well as on the odor quality evaluation of food packaging material. This paper describes the applications of these systems for meat quality assessment, where fast detection methods are essential for appropriate product management. The results suggest the possibility of using this new technology in meat handling.

  15. Meat quality assessment by electronic nose (machine olfaction technology).

    Science.gov (United States)

    Ghasemi-Varnamkhasti, Mahdi; Mohtasebi, Seyed Saeid; Siadat, Maryam; Balasubramanian, Sundar

    2009-01-01

    Over the last twenty years, newly developed chemical sensor systems (so called "electronic noses") have made odor analyses possible. These systems involve various types of electronic chemical gas sensors with partial specificity, as well as suitable statistical methods enabling the recognition of complex odors. As commercial instruments have become available, a substantial increase in research into the application of electronic noses in the evaluation of volatile compounds in food, cosmetic and other items of everyday life is observed. At present, the commercial gas sensor technologies comprise metal oxide semiconductors, metal oxide semiconductor field effect transistors, organic conducting polymers, and piezoelectric crystal sensors. Further sensors based on fibreoptic, electrochemical and bi-metal principles are still in the developmental stage. Statistical analysis techniques range from simple graphical evaluation to multivariate analysis such as artificial neural network and radial basis function. The introduction of electronic noses into the area of food is envisaged for quality control, process monitoring, freshness evaluation, shelf-life investigation and authenticity assessment. Considerable work has already been carried out on meat, grains, coffee, mushrooms, cheese, sugar, fish, beer and other beverages, as well as on the odor quality evaluation of food packaging material. This paper describes the applications of these systems for meat quality assessment, where fast detection methods are essential for appropriate product management. The results suggest the possibility of using this new technology in meat handling.

  16. Radiation effects and soft errors in integrated circuits and electronic devices

    CERN Document Server

    Fleetwood, D M

    2004-01-01

    This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

  17. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    KAUST Repository

    Almuslem, A. S.; Hanna, Amir; Yapici, Tahir; Wehbe, N.; Diallo, Elhadj; Kutbee, Arwa T.; Bahabry, Rabab R.; Hussain, Muhammad Mustafa

    2017-01-01

    , in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured

  18. Emittance investigation of RF photo-injector

    CERN Document Server

    Yang Mao Rong; Li Zheng; Li Ming; Xu Zhou

    2002-01-01

    A high-power laser beam illuminates a photocathode surface placed on an end wall of an RF cavity. The emitted electrons are accelerated immediately to a relativistic energy by the strong RF find in the cavity. But space charge effect induces beam emittance growth especially near the cathode where the electrons are still nonrelativistic. The author analyzes the factors which lead the transverse emittance growth and method how to resolve this problem. After introducing solenoidal focusing near the photocathode, the beam emittance growth is suppressed dramatically. The beam emittance is given also after compensation and simulation results. The measurements show these results are coincident

  19. Analog electronics for radiation detection

    CERN Document Server

    2016-01-01

    Analog Electronics for Radiation Detection showcases the latest advances in readout electronics for particle, or radiation, detectors. Featuring chapters written by international experts in their respective fields, this authoritative text: Defines the main design parameters of front-end circuitry developed in microelectronics technologies Explains the basis for the use of complementary metal oxide semiconductor (CMOS) image sensors for the detection of charged particles and other non-consumer applications Delivers an in-depth review of analog-to-digital converters (ADCs), evaluating the pros and cons of ADCs integrated at the pixel, column, and per-chip levels Describes incremental sigma delta ADCs, time-to-digital converter (TDC) architectures, and digital pulse-processing techniques complementary to analog processing Examines the fundamental parameters and front-end types associated with silicon photomultipliers used for single visible-light photon detection Discusses pixel sensors ...

  20. Radiation hardening of smart electronics

    International Nuclear Information System (INIS)

    Mayo, C.W.; Cain, V.R.; Marks, K.A.; Millward, D.G.

    1991-02-01

    Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs

  1. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R.G.; Jiang, H.; Wong, W.C.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia)

    1996-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  2. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R G; Jiang, H; Wong, W C; Kringhoj, P [Australian National Univ., Canberra, ACT (Australia)

    1997-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  3. Emittance growth due to the wake field driven by an electron beam accelerated in an RF-gun of free electron laser 'ELSA'

    CERN Document Server

    Salah, W

    2000-01-01

    It appears that the ease of the parameter chosen for 'ELSA' photo injector, the influence of the exit aperture, in terms of beam quality, is slight concerning the transverse emittance: (DELTA epsilon sub p sub e sub r sub p sub e sub n sub d sub i sub c sub u sub l sub a sub r /epsilon sub p sub e sub r sub p sub e sub n sub d sub i sub c sub u sub l sub a sub = = r)(z)approx 3% at maximum, and negligible concerning the axial emittance. To complete this paper, we recall the results previously obtained concerning the wake field of a closed or open cavity for a beam approaching the anode . They had quantitatively specified the expected deep asymmetry between the conducting walls regarding their contribution to the total wake field, besides the space-charge contribution. (Given that the radial walls have no time to contribute, these conducting walls are the cathode and the anode.) Thus, concerning the effects on whole-beam emittances, the correction (DELTA epsilon sub p sub e sub r sub p sub e sub n sub d sub i ...

  4. Destructive electronics from electrochemical-mechanically triggered chemical dissolution

    International Nuclear Information System (INIS)

    Sim, Kyoseung; Wang, Xu; Yu, Cunjiang; Li, Yuhang; Linghu, Changhong; Song, Jizhou; Gao, Yang

    2017-01-01

    The considerable need to enhance data and hardware security suggest one possible future for electronics where it is possible to destroy them and even make them disappear physically. This paper reports a type of destructive electronics which features fast transience from chemical dissolution on-demand triggered in an electrochemical-mechanical manner. The detailed materials, mechanics, and device construction of the destructive electronics are presented. Experiment and analysis of the triggered releasing and transience study of electronic materials, resistors and metal-oxide-semiconductor field effect transistors illustrate the key aspects of the destructive electronics. The reported destructive electronics is useful in a wide range of areas from security and defense, to medical applications (paper)

  5. A Hybrid System Based on an Electronic Nose Coupled with an Electronic Tongue for the Characterization of Moroccan Waters

    Directory of Open Access Journals (Sweden)

    Z. Haddi

    2014-05-01

    Full Text Available A hybrid multisensor system combined with multivariate analysis was applied to the characterization of different kinds of Moroccan waters. The proposed hybrid system based on an electronic nose coupled with an electronic tongue consisted of metal oxide semiconductors and potentiometric sensors respectively. Five Taguchi Gas Sensors were implemented in the electronic nose for the discrimination between mineral, natural, sparkling, river and tap waters. Afterwards, the electronic tongue, based on series of Ion-Selective-Electrodes was applied to the analysis of the same waters. Multisensor responses obtained from the waters were processed by two chemometrics: Principal Component Analysis (PCA and Linear Discriminant Analysis (LDA. PCA results using electronic nose data depict all of the potable water samples in a separate group from the samples that were originated from river. Furthermore, PCA and LDA analysis on electronic tongue data permitted clear and rapid recognizing of the different waters due to the concentration changes of the chemical parameters from source to another.

  6. Ultrathin MoS2 and WS2 layers on silver nano-tips as electron emitters

    Science.gov (United States)

    Loh, Tamie A. J.; Tanemura, Masaki; Chua, Daniel H. C.

    2016-09-01

    2-dimensional (2D) inorganic analogues of graphene such as MoS2 and WS2 present interesting opportunities for field emission technology due to their high aspect ratio and good electrical conductivity. However, research on 2D MoS2 and WS2 as potential field emitters remains largely undeveloped compared to graphene. Herein, we present an approach to directly fabricate ultrathin MoS2 and WS2 onto Ag nano-tips using pulsed laser deposition at low temperatures of 450-500 °C. In addition to providing a layer of chemical and mechanical protection for the Ag nano-tips, the growth of ultrathin MoS2 and WS2 layers on Ag led to enhanced emission properties over that of pristine nano-tips due to a reduction of the effective barrier height arising from charge injection from Ag to the overlying MoS2 or WS2. For WS2 on Ag nano-tips, the phasic mixture was also an important factor influencing the field emission performance. The presence of 1T-WS2 at the metal-WS2 interface in a hybrid film of 2H/1T-WS2 leads to improvement in the field emission capabilities as compared to pure 2H-WS2 on Ag nano-tips.

  7. Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

    Science.gov (United States)

    Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

    2018-03-28

    The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

  8. Some applications of Photon/Electron-Rejecting Alpha Liquid Scintillation (PERALS) spectrometry to the assay of alpha emitters

    International Nuclear Information System (INIS)

    McDowell, W.J.; Case, G.N.

    1988-01-01

    The combination of certain solvent extraction separations and a special kind of liquid scintillation detector and electronics designed for alpha spectrometry allows some highly accurate, yet simple determinations of alpha-emitting nuclides. Counting efficiency is 99.68% with backgrounds of 99.95%. The Photon/Electron Rejecting Alpha Liquid Scintillation (PERALS) equipment is described and procedures for the separation and determination of uranium, thorium, plutonium, polonium, radium, and trivalent actinides are outlined. 25 refs., 10 figs., 1 tab

  9. Stability of Trapped Electrons in SiO(2)

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.

    1999-01-01

    Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

  10. An ultra-low-voltage electronic implementation of inertial neuron model with nonmonotonous Liao's activation function.

    Science.gov (United States)

    Kant, Nasir Ali; Dar, Mohamad Rafiq; Khanday, Farooq Ahmad

    2015-01-01

    The output of every neuron in neural network is specified by the employed activation function (AF) and therefore forms the heart of neural networks. As far as the design of artificial neural networks (ANNs) is concerned, hardware approach is preferred over software one because it promises the full utilization of the application potential of ANNs. Therefore, besides some arithmetic blocks, designing AF in hardware is the most important for designing ANN. While attempting to design the AF in hardware, the designs should be compatible with the modern Very Large Scale Integration (VLSI) design techniques. In this regard, the implemented designs should: only be in Metal Oxide Semiconductor (MOS) technology in order to be compatible with the digital designs, provide electronic tunability feature, and be able to operate at ultra-low voltage. Companding is one of the promising circuit design techniques for achieving these goals. In this paper, 0.5 V design of Liao's AF using sinh-domain technique is introduced. Furthermore, the function is tested by implementing inertial neuron model. The performance of the AF and inertial neuron model have been evaluated through simulation results, using the PSPICE software with the MOS transistor models provided by the 0.18-μm Taiwan Semiconductor Manufacturer Complementary Metal Oxide Semiconductor (TSM CMOS) process.

  11. Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

    Science.gov (United States)

    Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

    2018-03-01

    The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

  12. Spatial coherence of electron beams from field emitters and its effect on the resolution of imaged objects

    Energy Technology Data Exchange (ETDEWEB)

    Latychevskaia, Tatiana, E-mail: tatiana@physik.uzh.ch

    2017-04-15

    Sub-nanometer and nanometer-sized tips provide high coherence electron sources. Conventionally, the effective source size is estimated from the extent of the experimental biprism interference pattern created on the detector by applying the van Cittert Zernike theorem. Previously reported experimental intensity distributions on the detector exhibit Gaussian distribution and our simulations show that this is an indication that such electron sources must be at least partially coherent. This, in turn means that strictly speaking the Van Cittert Zernike theorem cannot be applied, since it assumes an incoherent source. The approach of applying the van Cittert Zernike theorem is examined in more detail by performing simulations of interference patterns for the electron sources of different size and different coherence length, evaluating the effective source size from the extent of the simulated interference pattern and comparing the obtained result with the pre-defined value. The intensity distribution of the source is assumed to be Gaussian distributed, as it is observed in experiments. The visibility or the contrast in the simulated holograms is found to be always less than 1 which agrees well with previously reported experimental results and thus can be explained solely by the Gaussian intensity distribution of the source. The effective source size estimated from the extent of the interference pattern turns out to be of about 2–3 times larger than the pre-defined size, but it is approximately equal to the intrinsic resolution of the imaging system. A simple formula for estimating the intrinsic resolution, which could be useful when employing nano-tips in in-line Gabor holography or point-projection microscopy, is provided. - Highlights: • van Cittert Zernike theorem for nano- and sub-nano electron emitting tips is revised. • Simulations show that nano- and sub-nano electron emitting tips are at least partially coherent. • A simple formula for evaluating

  13. A physically transient form of silicon electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Song, Young Min; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L; Zakin, Mitchell R; Slepian, Marvin J; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A

    2012-09-28

    A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

  14. Development of high-current-density LAB6 thermionic emitters for a space-charge-limited electron gun

    International Nuclear Information System (INIS)

    Herniter, M.E.; Getty, W.D.

    1987-01-01

    An electron gun has been developed for investigation of high current density, space charge limited operation of a lenthanum hexaboride (LaB 6 ) thermionic cathode. The 2.8 cm 2 cathode disk is heated by electron bombardment from a tungsten filament. For LaB 6 cathode temperatures greater than 1600 0 C it has been found that evaporation from the LaB 6 causes an increase in the tungsten filament emission, leading to an instability in the bombardment heating system. This instability has been investigated and eliminated by using a graphite disk in place of the LaB 6 cathode or by shielding the filament from the LaB 6 cathode by placing the LaB 6 in a graphite cup and bombarding the cup. The graphite disk has been heated to 1755 0 C with 755 W of heating power, and the shielded LaB 6 cathode has been heated to 1695 0 C. This temperature range is required for emission current densities in the 30 Acm 2 range. It is believed that the evaporation of lanthanum lowers the tungsten work function. In electron-gun use, the LaB 6 cathode has been operated up to 6.7 Acm 2 at 36 kV. A 120 kV Marx generator has been built to allow operation up to 40 Acm 2

  15. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  16. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

    2011-01-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  17. Low emittance configuration for spear

    International Nuclear Information System (INIS)

    Blumberg, L.N.; Harris, J.; Stege, R.; Cerino, J.; Hettel, R.; Hofmann, A.; Liu, R.Z.; Wiedemann, H.; Winick, H.

    1985-01-01

    The quality of synchrotron radiation beams from SPEAR, in particular the brilliance of undulator radiation, can be improved significantly by reducing the emittance of the stored electron beam. A reduction of the horizontal emittance by a factor of 3.5 to a value of 130 nanometer-radians (nm-r) at 3 GeV has been achieved by using stronger focussing, mainly in the horizontal plane. The low emittance configuration also reduces the dispersion and vertical beta functions in the straight sections, making them more suitable for wigglers. The higher betatron tunes lead to a larger phase advance between the two kickers, which has to be corrected during injection by shunting current from some quadrupoles. The configuration was optimized within SPEAR hardware limitations and tested for dynamic aperture with the tracking program PATRICIA. After implementation of this scheme, beam was successfully injected and accumulated. The measured emittance of the stored beam was in agreement with calculations. Presently the configuration is being made operational

  18. Beam emittance measurement from CERN thermionic guns

    International Nuclear Information System (INIS)

    Kester, O.; Rao, R.; Rinolfi, L.

    1992-01-01

    In the LEP Injector Linacs (LIL) a thermionic gun provides electron beams with different peak intensities at an energy of 80 keV. The beam emittances were estimated from the EGUN programme. Since the gun is of triode type, the main contribution to the emittance comes from the grid. The simulation programme does not model the real geometry by assuming a cylindrical symmetry, while the grid does not have such symmetry. A Gun Test Facility (GTF), allowing emittance measurements, based on the 3-gradients-method was installed. The experimental results are presented. (author) 6 refs.; 6 figs

  19. Quantum efficiency and thermal emittance of metal photocathodes

    Directory of Open Access Journals (Sweden)

    David H. Dowell

    2009-07-01

    Full Text Available Modern electron beams have demonstrated the brilliance needed to drive free electron lasers at x-ray wavelengths with major advances occurring since the invention of the photocathode gun and the realization of emittance compensation. These state-of-the-art electron beams are now becoming limited by the intrinsic thermal emittance of the cathode. In both dc and rf photocathode guns details of the cathode emission physics strongly influence the quantum efficiency and the thermal emittance. Therefore improving cathode performance is essential to increasing the brightness of beams. It is especially important to understand the fundamentals of cathode quantum efficiency and thermal emittance. This paper investigates the relationship between the quantum efficiency and the thermal emittance for metal cathodes using the Fermi-Dirac model for the electron distribution. We use a consistent theory to derive the quantum efficiency and thermal emittance, and compare our results to those of others.

  20. The Quantum Efficiency and Thermal Emittance of Metal Photocathodes

    International Nuclear Information System (INIS)

    Dowell, D.

    2009-01-01

    Modern electron beams have demonstrated the brilliance needed to drive free electron lasers at x-ray wavelengths, with the principle improvements occurring since the invention of the photocathode gun. The state-of-the-art normalized emittance electron beams are now becoming limited by the thermal emittance of the cathode. In both DC and RF photocathode guns, details of the cathode emission physics strongly influence the quantum efficiency and the thermal emittance. Therefore improving cathode performance is essential to increasing the brightness of beams. It is especially important to understand the fundamentals of cathode quantum efficiency and thermal emittance. This paper investigates the relationship between the quantum efficiency and the thermal emittance of metal cathodes using the Fermi-Dirac model for the electron distribution. We derive the thermal emittance and its relationship to the quantum efficiency, and compare our results to those of others

  1. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  2. Enhancement of electron emission and long-term stability of tip-type carbon nanotube field emitters via lithium coating

    International Nuclear Information System (INIS)

    Kim, Jong-Pil; Chang, Han-Beet; Kim, Bu-Jong; Park, Jin-Seok

    2013-01-01

    Carbon nanotubes (CNTs) were deposited on conical tip-type substrates via electrophoresis and coated with lithium (Li) thin films with diverse thicknesses via electroplating. For the as-deposited (i.e., without Li coating) CNT, the turn-on (or triggering) electric field was 0.92 V/μm, and the emission current, which was generated at an applied field of 1.2 V/μm was 56 μA. In the case of the 4.7 nm-thick Li-coated CNT, the turn-on field decreased to 0.65 V/μm and the emission current at the same applied field increased more than ten times to 618 μA. The analysis based on the Kelvin probe measurement and Fowler–Nordheim theory indicated that the coating of Li caused a loss in the structural-aspect-ratio of the CNTs and it reduced their effective work functions from 5.36 eV to 4.90 eV, which led to a great improvement of their electron emission characteristics. The results obtained in this study also showed that the long-term emission stability could be enhanced by the coating of thin Li films on CNTs. - Highlights: ► CNTs are deposited via electrophoretic deposition (EPD). ► Thin films of Li are coated on CNTs via electroplating, without plasma damage. ► Li coating enhanced field emission properties and emission stability of CNTs. ► The effective work functions and field enhancement factors of CNTs are evaluated

  3. 8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

    Science.gov (United States)

    Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

    2018-06-01

    The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

  4. New trend in electron holography

    Science.gov (United States)

    Tanigaki, Toshiaki; Harada, Ken; Murakami, Yasukazu; Niitsu, Kodai; Akashi, Tetsuya; Takahashi, Yoshio; Sugawara, Akira; Shindo, Daisuke

    2016-06-01

    Electron holography using a coherent electron wave is a promising technique for high-resolution visualization of electromagnetic fields in and around objects. The capability of electron holography has been enhanced by the development of new technologies and has thus become an even more powerful tool for exploring scientific frontiers. This review introduces these technologies including split-illumination electron holography and vector-field electron tomography. Split-illumination electron holography, which uses separated coherent waves, overcomes the limits imposed by the lateral coherence requirement for electron waves in electron holography. Areas that are difficult to observe using conventional electron holography are now observable. Exemplified applications include observing a singular magnetic domain wall in electrical steel sheets, local magnetizations at anti-phase boundaries, and electrostatic potentials in metal-oxide-semiconductor field-effect transistors. Vector-field electron tomography can be used to visualize magnetic vectors in three dimensions. Two components of the vectors are reconstructed using dual-axis tomography, and the remaining one is calculated using div B   =  0. A high-voltage electron microscope can be used to achieve precise magnetic reconstruction. For example, magnetic vortices have been visualized using a 1 MV holography electron microscope.

  5. New trend in electron holography

    International Nuclear Information System (INIS)

    Tanigaki, Toshiaki; Akashi, Tetsuya; Takahashi, Yoshio; Sugawara, Akira; Harada, Ken; Niitsu, Kodai; Shindo, Daisuke; Murakami, Yasukazu

    2016-01-01

    Electron holography using a coherent electron wave is a promising technique for high-resolution visualization of electromagnetic fields in and around objects. The capability of electron holography has been enhanced by the development of new technologies and has thus become an even more powerful tool for exploring scientific frontiers. This review introduces these technologies including split-illumination electron holography and vector-field electron tomography. Split-illumination electron holography, which uses separated coherent waves, overcomes the limits imposed by the lateral coherence requirement for electron waves in electron holography. Areas that are difficult to observe using conventional electron holography are now observable. Exemplified applications include observing a singular magnetic domain wall in electrical steel sheets, local magnetizations at anti-phase boundaries, and electrostatic potentials in metal-oxide-semiconductor field-effect transistors. Vector-field electron tomography can be used to visualize magnetic vectors in three dimensions. Two components of the vectors are reconstructed using dual-axis tomography, and the remaining one is calculated using div B   =  0. A high-voltage electron microscope can be used to achieve precise magnetic reconstruction. For example, magnetic vortices have been visualized using a 1 MV holography electron microscope. (paper)

  6. A new coupling mechanism between two graphene electron waveguides for ultrafast switching

    Science.gov (United States)

    Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee

    2018-03-01

    In this paper, we report a novel coupling between two graphene electron waveguides, in analogy the optical waveguides. The design is based on the coherent quantum mechanical tunneling of Rabi oscillation between the two graphene electron waveguides. Based on this coupling mechanism, we propose that it can be used as an ultrafast electronic switching device. Based on a modified coupled mode theory, we construct a theoretical model to analyze the device characteristics, and predict that the switching speed is faster than 1 ps and the on-off ratio exceeds 106. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the traditional design by using semiconductor quantum-well structure. The layout of our design is similar to that of a standard complementary metal-oxide-semiconductor transistor that should be readily fabricated with current state-of-art nanotechnology.

  7. Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

    Directory of Open Access Journals (Sweden)

    Sylvain Barraud

    2016-03-01

    Full Text Available The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.

  8. Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

    Science.gov (United States)

    Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

    2017-05-16

    Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m 2 ) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

  9. Reversibly Bistable Flexible Electronics

    KAUST Repository

    Alfaraj, Nasir

    2015-05-01

    Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

  10. Auger electron emitter against multiple myeloma - targeted endo-radio-therapy with 125I-labeled thymidine analogue 5-iodo-4'-thio-2'-deoxyuridine

    International Nuclear Information System (INIS)

    Morgenroth, Agnieszka; Dinger, Cornelia; Zlatopolskiy, Boris D.; Al-Momani, Ehab; Glatting, Gerhard; Mottaghy, Felix M.; Reske, Sven N.

    2011-01-01

    Introduction: Multiple myeloma (MM) is a plasma cell malignancy characterized by accumulation of malignant, terminally differentiated B cells in the bone marrow. Despite advances in therapy, MM remains an incurable disease. Novel therapeutic approaches are, therefore, urgently needed. Auger electron-emitting radiopharmaceuticals are attractive for targeted nano-irradiation therapy, given that DNA of malignant cells is selectively addressed. Here we evaluated the antimyeloma potential of the Auger electron-emitting thymidine analogue 125 I-labeled 5-iodo-4'-thio-2'-deoxyuridine ([ 125 I]ITdU). Methods: Cellular uptake and DNA incorporation of [ 125 I]ITdU were determined in fluorodeoxyuridine-pretreated KMS12BM, U266, dexamethasone-sensitive MM1.S and -resistant MM1.R cell lines. The effect of stimulation with interleukin 6 (IL6) or insulin-like growth factor 1 (IGF1) on the intracellular incorporation of [ 125 I]ITdU was investigated in cytokine-sensitive MM1.S and MM1.R cell lines. Apoptotic cells were identified using Annexin V. Cleavage of caspase 3 and PARP was visualized by Western blot. DNA fragmentation was investigated using laddering assay. Therapeutic efficiency of [ 125 I]ITdU was proven by clonogenic assay. Results: [ 125 I]ITdU was shown to be efficiently incorporated into DNA of malignant cells, providing a promising mechanism for delivering highly toxic Auger radiation emitters into tumor DNA. [ 125 I]ITdU had a potent antimyeloma effect in cell lines representing distinct disease stages and, importantly, in cell lines sensitive or resistant to the conventional therapeutic agent, but was not toxic for normal plasma and bone marrow stromal cells. Furthermore, [ 125 I]ITdU abrogated the protective actions of IL6 and IGF1 on MM cells. [ 125 I]ITdU induced massive damage in the DNA of malignant plasma cells, which resulted in efficient inhibition of clonogenic growth. Conclusion: These studies may provide a novel treatment strategy for overcoming

  11. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  12. Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

    2011-07-01

    Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

  13. Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

    Science.gov (United States)

    Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

    2005-04-01

    We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

  14. A low-emittance lattice for SPEAR

    International Nuclear Information System (INIS)

    Safranek, J.; Wiedemann, H.

    1992-01-01

    The design and implementation of a low emittance lattice for the SPEAR storage ring including measurements of the performance of the lattice are presented (J. Safranek, Ph. D. thesis, Stanford University, 1991). The low emittance lattice is designed to optimize the performance of SPEAR as a synchrotron radiation source while keeping SPEAR hardware changes at a minimum. The horizontal emittance of the electron beam in the low emittance lattice is reduced by a factor of 4 from the previous lattice. This reduces the typical horizontal source size and divergence of the photon beams by a factor of 2 each and increases the photon beam brightness. At 3 GeV the horizontal emittance is 129 π nm rad, which makes the low emittance lattice the lowest emittance, runnning synchroton radiation source in the world in the 1.5 to 4.0 GeV energy range for the emittance scaled to 3 GeV. The measured vertical emittance was reduced to half that typically seen at SPEAR in the past. The brightness of the photon beams was further incrased by reducing β y at the insertion devices to 1.1 m and reducing the energy dispersion at the insertion devices by more than a factor of 2 on average. The horizontal despersion at the rf cavities was reduced by a factor of nearly 4 which gives much less problems with synchrobetatron resonances. The dynamic and physical apertures of the lattice are large, giving long beam lifetimes and easy injection of electrons. The measurements of the linear optics and intensity dependent phenomena gave resonable agreement with the design . The overall performance of the machine was very good. Injection rates of 10 to 20 mA/min and larger were achieved routinely, and 100 mA total current was stored. Repeated ramping of stored beam from the injection energy of 2.3 GeV to the running energy of 3.0 GeV was achieved with very little beam loss. This low emittance configuration is expected to be the operating configuration for SPEAR starting in January 1992. (orig.)

  15. Modular Lego-Electronics

    KAUST Repository

    Shaikh, Sohail F.

    2017-10-24

    Electronic system components have thousands of individual field effect transistors (FETs) interconnected executing dedicated functions. Assembly yield of >80% will guarantee system failure since a single interconnect failure will result in undesired performance. Hence, a paradigm shift is needed in the self-assembly or integration of state-of-the-art integrated circuits (ICs) for a physically compliant system. Traditionally, most ICs share same geometry with only variations in dimensions and packaging. Here, a generic manufacturable method of converting state-of-the-art complementary metal oxide semiconductor-based ICs into modular Lego-electronics is shown with unique geometry that is physically identifiable to ease manufacturing and enhance throughput. Various geometries at the backside of the silicon die and on the destination site having the same geometry with relaxed dimension (up to 50 µm extra) allow targeted site binding like DNA assembly. Different geometries, angles, and heights for different modules provide a unique identity to each of the ICs. A two-level geometric combination presented here helps in maintaining the uniqueness of individual module to assemble at exact matching site like a perfect lock-and-key model. The assembled ICs offer uncompromised electrical performance, higher yield, and fabrication ease. In future, this method can further be expanded for fluidic assisted self-assembly.

  16. Coupling of Quantum Emitters in Nanodiamonds to Plasmonic Structures

    DEFF Research Database (Denmark)

    Kumar, Shailesh

    This PhD thesis describes work towards the enhancement and efficient channeling of photons emitted from a single photon emitter. The emitter used is a defect center, the Nitrogen-Vacancy (NV) center, in diamond. The NV-center has many unique properties, such as long coherence time of its electron...

  17. Cancer from internal emitters

    International Nuclear Information System (INIS)

    Boecker, B.B.; Griffith, W.C. Jr.

    1995-01-01

    Irradiation from internal emitters, or internally deposited radionuclides, is an important component of radiation exposures encountered in the workplace, home, or general environment. Long-term studies of human populations exposed to various internal emitters by different routes of exposure are producing critical information for the protection of workers and members of the general public. The purpose of this report is to examine recent developments and discuss their potential importance for understanding lifetime cancer risks from internal emitters. The major populations of persons being studied for lifetime health effects from internally deposited radionuclides are well known: Lung cancer in underground miners who inhaled Rn progeny, liver cancer from persons injected with the Th-containing radiographic contrast medium Thorotrast, bone cancer from occupational or medical intakes of 226 Ra or medical injections of 224 Ra, and thyroid cancer from exposures to iodine radionuclides in the environment or for medical purposes

  18. Transverse emittance measurement at REGAE via a solenoid scan

    Energy Technology Data Exchange (ETDEWEB)

    Hachmann, Max; Mayet, Frank; Gruener, Florian [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Floettmann, Klaus [DESY, Hamburg (Germany)

    2013-07-01

    The linear accelerator REGAE at DESY produces short and low charged electron bunches, on the one hand to resolve the excitation transitions of atoms temporally by pump probe electron diffraction experiments and on the other hand to investigate principal mechanisms of laser plasma acceleration. For both cases a high quality electron beam is required which can be identified with a small beam emittance. The current method to measure the transverse beam emittance at REGAE and results are presented.

  19. Simple-to-prepare multipoint field emitter

    Science.gov (United States)

    Sominskii, G. G.; Taradaev, E. P.; Tumareva, T. A.; Mishin, M. V.; Kornishin, S. Yu.

    2015-07-01

    We investigate multitip field emitters prepared by electroerosion treatment of the surface of molybdenum samples. Their characteristics are determined for operation with a protecting activated fullerene coating. Our experiments indicate that such cathodes are promising for high-voltage electron devices operating in technical vacuum.

  20. Emittance measuring system on the UNILAC

    International Nuclear Information System (INIS)

    Ehrich, A.; Glatz, J.; Strahl, P.

    A description is given of one of the beam emittance measuring systems designed for the UNILAC at GSI. The measuring system mechanics and the detector system are detailed, and the associated electronics are discussed. Computer programming and data processing and evaluation are described

  1. Calculating emittance for Gaussian and Non-Gaussian distributions by the method of correlations for slits

    International Nuclear Information System (INIS)

    Tan, Cheng-Yang; Fermilab

    2006-01-01

    One common way for measuring the emittance of an electron beam is with the slits method. The usual approach for analyzing the data is to calculate an emittance that is a subset of the parent emittance. This paper shows an alternative way by using the method of correlations which ties the parameters derived from the beamlets to the actual parameters of the parent emittance. For parent distributions that are Gaussian, this method yields exact results. For non-Gaussian beam distributions, this method yields an effective emittance that can serve as a yardstick for emittance comparisons

  2. BEAM EMITTANCE MEASUREMENT TOOL FOR CEBAF OPERATIONS

    International Nuclear Information System (INIS)

    Chevtsov, Pavel; Tiefenback, Michael

    2008-01-01

    A new software tool was created at Jefferson Lab to measure the emittance of the CEBAF electron beams. The tool consists of device control and data analysis applications. The device control application handles the work of wire scanners and writes their measurement results as well as the information about accelerator settings during these measurements into wire scanner data files. The data analysis application reads these files and calculates the beam emittance on the basis of a wire scanner data processing model. Both applications are computer platform independent but are mostly used on LINUX PCs recently installed in the accelerator control room. The new tool significantly simplifies beam emittance measurement procedures for accelerator operations and contributes to a very high availability of the CEBAF machine for the nuclear physics program at Jefferson Lab.

  3. A new method to characterize dopant profiles in NMOSFETs using conventional transmission electron microscopy

    International Nuclear Information System (INIS)

    Kawamura, Kazuo; Ikeda, Kazuto; Terauchi, Masami

    2004-01-01

    We have developed a new method using conventional transmission electron microscopy (TEM) to obtain two dimensional dopant profiles in silicon and applied it to 40 nm-gate-length N + /p metal oxide semiconductor field effect transistors (MOSFETs). The results are consistent with those of selective-chemically etched samples observed by TEM. This method, using focused ion beam (FIB) sample preparation and conventional TEM, has the great advantage of simple sample preparation and high spatial resolution compared to other characterization methods, such as atomic capacitance microscopy, spreading resistance microscopy, and TEM combined with selective chemical etching. This indicates that this method can be applicable to the analysis of FETs at the 65 nm or smaller node

  4. Electrografting of diazonium-functionalized polyoxometalates: synthesis, immobilisation and electron-transfer characterisation from glassy carbon.

    Science.gov (United States)

    Rinfray, Corentin; Izzet, Guillaume; Pinson, Jean; Gam Derouich, Sarra; Ganem, Jean-Jacques; Combellas, Catherine; Kanoufi, Frédéric; Proust, Anna

    2013-10-04

    Polyoxometalates (POMs) are attractive candidates for the rational design of multi-level charge-storage materials because they display reversible multi-step reduction processes in a narrow range of potentials. The functionalization of POMs allows for their integration in hybrid complementary metal oxide semiconductor (CMOS)/molecular devices, provided that fine control of their immobilisation on various substrates can be achieved. Owing to the wide applicability of the diazonium route to surface modification, a functionalized Keggin-type POM [PW11 O39 {Ge(p-C6 H4 -CC-C6 H4 -${{\\rm N}{{+\\hfill \\atop 2\\hfill}}}$)}](3-) bearing a pending diazonium group was prepared and subsequently covalently anchored onto a glassy carbon electrode. Electron transfer with the immobilised POM was thoroughly investigated and compared to that of the free POM in solution. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Liu, Chuan

    2011-01-01

    Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...... matrix were formed by complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition and annealing. Different sizes of the Ge nanocrystals were prepared and analyzed by transmission electron microscopy with respect to their size, distribution...... and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser...

  6. Biodegradable elastomers and silicon nanomembranes/nanoribbons for stretchable, transient electronics, and biosensors.

    Science.gov (United States)

    Hwang, Suk-Won; Lee, Chi Hwan; Cheng, Huanyu; Jeong, Jae-Woong; Kang, Seung-Kyun; Kim, Jae-Hwan; Shin, Jiho; Yang, Jian; Liu, Zhuangjian; Ameer, Guillermo A; Huang, Yonggang; Rogers, John A

    2015-05-13

    Transient electronics represents an emerging class of technology that exploits materials and/or device constructs that are capable of physically disappearing or disintegrating in a controlled manner at programmed rates or times. Inorganic semiconductor nanomaterials such as silicon nanomembranes/nanoribbons provide attractive choices for active elements in transistors, diodes and other essential components of overall systems that dissolve completely by hydrolysis in biofluids or groundwater. We describe here materials, mechanics, and design layouts to achieve this type of technology in stretchable configurations with biodegradable elastomers for substrate/encapsulation layers. Experimental and theoretical results illuminate the mechanical properties under large strain deformation. Circuit characterization of complementary metal-oxide-semiconductor inverters and individual transistors under various levels of applied loads validates the design strategies. Examples of biosensors demonstrate possibilities for stretchable, transient devices in biomedical applications.

  7. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

    Directory of Open Access Journals (Sweden)

    Shojan P. Pavunny

    2014-03-01

    Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

  8. On the design guideline for the low emittance synchrotron radiation source

    International Nuclear Information System (INIS)

    Kamiya, Y.; Kihara, M.

    1983-09-01

    In this note we will describe how the emittance of the electron storage ring is determined by the orbit parameters of the storage ring and show the lowest value of emittance which is achieved theoretically. Implication of this note with regard to the design of the low emittance storage ring will be discussed. (author)

  9. CSR-induced emittance growth in achromats: Linear formalism revisited

    Energy Technology Data Exchange (ETDEWEB)

    Venturini, M.

    2015-09-11

    We review the R-matrix formalism used to describe Coherent Synchrotron Radiation (CSR)-induced projected emittance growth in electron beam transport lines and establish the connection with a description in terms of the dispersion-invariant function.

  10. Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

    Science.gov (United States)

    Tu, Hongen

    This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

  11. Low-emittance Storage Rings

    CERN Document Server

    Wolski, Andrzej

    2014-01-01

    The effects of synchrotron radiation on particle motion in storage rings are discussed. In the absence of radiation, particle motion is symplectic, and the beam emittances are conserved. The inclusion of radiation effects in a classical approximation leads to emittance damping: expressions for the damping times are derived. Then, it is shown that quantum radiation effects lead to excitation of the beam emittances. General expressions for the equilibrium longitudinal and horizontal (natural) emittances are derived. The impact of lattice design on the natural emittance is discussed, with particular attention to the special cases of FODO-, achromat- and theoretical-minimum-emittance-style lattices. Finally, the effects of betatron coupling and vertical dispersion (generated by magnet alignment and lattice tuning errors) on the vertical emittance are considered.

  12. Rare Earth Garnet Selective Emitter

    Science.gov (United States)

    Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

    1994-01-01

    Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional

  13. Spherical proton emitters

    International Nuclear Information System (INIS)

    Berg, S.; Semmes, P.B.; Nazarewicz, W.

    1997-01-01

    Various theoretical approaches to proton emission from spherical nuclei are investigated, and it is found that all the methods employed give very similar results. The calculated decay widths are found to be qualitatively insensitive to the parameters of the proton-nucleus potential, i.e., changing the potential parameters over a fairly large range typically changes the decay width by no more than a factor of ∼3. Proton half-lives of observed heavy proton emitters are, in general, well reproduced by spherical calculations with the spectroscopic factors calculated in the independent quasiparticle approximation. The quantitative agreement with experimental data obtained in our study requires that the parameters of the proton-nucleus potential be chosen carefully. It also suggests that deformed proton emitters will provide invaluable spectroscopic information on the angular momentum decomposition of single-proton orbitals in deformed nuclei. copyright 1997 The American Physical Society

  14. Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Lee, Sanghoon; Cohen-Elias, Doron; Law, Jeremy J. M.; Carter, Andrew D.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chobpattana, Varistha; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106 (United States); Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2013-11-11

    We compare the DC characteristics of planar In{sub 0.53}Ga{sub 0.47}As channel MOSFETs using AlAs{sub 0.56}Sb{sub 0.44} barriers to similar MOSFETs using In{sub 0.52}Al{sub 0.48}As barriers. AlAs{sub 0.56}Sb{sub 0.44}, with ∼1.0 eV conduction-band offset to In{sub 0.53}Ga{sub 0.47}As, improves electron confinement within the channel. At gate lengths below 100 nm and V{sub DS} = 0.5 V, the MOSFETs with AlAs{sub 0.56}Sb{sub 0.44} barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the In{sub 0.52}Al{sub 0.48}As barrier to thermionic emission from the N + In{sub 0.53}Ga{sub 0.47}As source over the In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterointerface. A 56 nm gate length device with the AlAs{sub 0.56}Sb{sub 0.44} barrier exhibits 1.96 mS/μm peak transconductance and SS = 134 mV/dec at V{sub DS} = 0.5 V.

  15. Dosimetry of internal emitters

    International Nuclear Information System (INIS)

    Anon.

    1982-01-01

    The Dosimetry of Internal Emitter Program endeavors to refine the correlation between radiation dose and observed biological effects. The program is presently engaged in the development of studies that will demonstrate the applicability of microdosimetry models developed under the Microdosimetry of Internal Sources Program. The program also provides guidance and assistance to Pacific Northwest Laboratory's Biology Department in the dosimetric analysis of internally deposited radionuclides. This report deals with alpha particle dosimetry plutonium 239 inhalation, and in vitro studies of chromosomal observations

  16. Nonintercepting emittance monitor

    International Nuclear Information System (INIS)

    Miller, R.H.; Clendenin, J.E.; James, M.B.; Sheppard, J.C.

    1983-08-01

    A nonintercepting emittance monitor is a helpful device for measuring and improving particle beams in accelerators and storage rings as it allows continuous monitoring of the beam's distribution in phase space, and perhaps closed loop computer control of the distributions. Stripline position monitors are being investigated for use as nonintercepting emittance monitors for a beam focused by a FODO array in the first 100 meters of our linear accelerator. The technique described here uses the signal from the four stripline probes of a single position monitor to measure the quadrupole mode of the wall current in the beam pipe. This current is a function of the quadrupole moment of the beam, sigma 2 /sub x/ - sigma 2 /sub y/. In general, six independent measurements of the quadrupole moment are necessary to determine the beam emittance. This technique is dependent on the characteristically large variations of sigma 2 /sub x/ - sigma 2 /sub y/ in a FODO array. It will not work in a focusing system where the beam is round at each focusing element

  17. Emittance compensation of CW DC-gun photoinjector

    International Nuclear Information System (INIS)

    Li Peng; Wu Dai; Xu Zhou; Li Ming; Yang Xingfan

    2011-01-01

    Emittance growth induced by space charge effect is very important, especially for CW DC-gun photoinjector. In this work, the linear space charge force and its effect on electron beam transverse emittance are studied, and the principle and properties of emittance compensation by solenoid are analyzed. The CAEP DC-gun photoinjector with a solenoid is also simulated by code Parmela. Simulated results indicate that the normalized transverse emittance of an 80 pC bunch at the 350 keV DC-gun ex-it is 5.14 mm · mrad. And after compensated by a solenoid, it becomes 1.27 mm · mrad. The emittance of beam is well compensated. (authors)

  18. Transverse emittance measurement at REGAE via a solenoid scan

    Energy Technology Data Exchange (ETDEWEB)

    Hachmann, Max

    2012-12-15

    The linear accelerator REGAE at DESY produces short and low charged electron bunches, on the one hand to resolve the excitation transitions of atoms temporally by pump probe electron diffraction experiments and on the other hand to investigate principal mechanisms of laser plasma acceleration. For both cases a high quality electron beam is required. A quantity to rate the beam quality is the beam emittance. In the course of this thesis transverse emittance measurements by a solenoid scan could be realized and beyond that an improved theoretical description of a solenoid was successful. The foundation of emittance measurements are constituted by theoretical models which describe the envelope of a beam. Two different models were derived. The first is an often used model to determine the transverse beam emittance without considering space charge effects. More interesting and challenging was the development of an envelope model taking space charge effects into account. It is introduced and cross checked with measurements and simulations.

  19. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  20. A low emittance configuration for spear

    International Nuclear Information System (INIS)

    Blumberg, L.N.; Cerino, J.; Harris, J.; Hettel, R.; Hofmann, A.; Liu, R.Z.; Stego, R.; Wiedemann, H.; Winick, H.

    1985-01-01

    The quality of synchrotron radiation beams from SPEAR, in particular the brilliance of undulator radiation, can be improved significantly by reducing the emittance of the stored electron beam. A reduction of the horizontal emittance by a factor of 3.5 to a value of 130 nanometer-radians (nm-r) at 3 GeV has been achieved by using stronger focussing, mainly in the horizontal plane. The low emittance configuration also reduces the dispersion and vertical beta functions in the straight sections, making them more suitable for wigglers. The higher betatron tunes lead to a larger phase advance between the two kickers, which has to be corrected during injection by shunting current from some quadrupoles. The configuration was optimized within SPEAR hardware limitations and tested for dynamic aperture with the tracking program PATRICIA. After implementation of this scheme, beam was successfully injected and accumulated. The measured emittance of the stored beam was in agreement with calculations. Presently the configuration is being made operational

  1. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    International Nuclear Information System (INIS)

    Adamian, A.Z.; Adamian, Z.N.; Aroutiounian, V.M.

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi 2 O 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold

  2. Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Ahmed A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Dere, A. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Arif, Bilal [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-11-25

    The Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method to fabricate photodiodes. The transparent metal oxide Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O thin films were grown on p-Si substrates by spin coating technique. Electrical characterization of the p-Si/AZO:Cu{sub 2}O photodiodes was performed by current–voltage and capacitance–conductance–voltage characteristics under dark and various illumination conditions. The transient photocurrent of the diodes increases with increase in illumination intensity. The photoconducting mechanism of the diodes is controlled by the continuous distribution of trap levels. The photocapacitance and photoconductivity of the diodes are decreased with increasing Cu{sub 2}O content. The series resistance–voltage behavior confirms the presence of the interface states in the interface of the diodes. The photoresponse properties of the diodes indicate that the p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used as a photosensor in solar panel tracking applications. - Highlights: • Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes were fabricated. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used in the optoelectronic applications.

  3. Development of a Silicon Metal-Oxide-Semiconductor-Based Qubit Using Spin Exchange Interactions Alone

    Science.gov (United States)

    2016-03-31

    technology fields: Student Metrics This section only applies to graduating undergraduates supported by this agreement in this reporting period The number...QD device, around a Coulomb peak, shows 1/f power spectra density for the intrinsic gate noise. The noise amplitude reduces continuously as the

  4. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  5. Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

    International Nuclear Information System (INIS)

    Kamimura, Hiroshi; Kato, Masataka.

    1991-01-01

    A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

  6. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

    2016-01-01

    shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

  8. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Czech Academy of Sciences Publication Activity Database

    Ciccarelli, C.; Park, B.G.; Ogawa, S.; Ferguson, A.J.; Wunderlich, Joerg

    2010-01-01

    Roč. 97, č. 8 (2010), 082106/1-082106/3 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100521 Keywords : MOSFET Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010

  9. Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

    Directory of Open Access Journals (Sweden)

    Isidoro Martinez

    2015-11-01

    Full Text Available We investigate the influence of an external magnetic field on the magnitude and dephasing of the transient lateral photovoltaic effect (T-LPE in lithographically patterned Co lines of widths of a few microns grown over naturally passivated p-type Si(100. The T-LPE peak-to-peak magnitude and dephasing, measured by lock-in or through the characteristic time of laser OFF exponential relaxation, exhibit a notable influence of the magnetization direction of the ferromagnetic overlayer. We show experimentally and by numerical simulations that the T-LPE magnitude is determined by the Co anisotropic magnetoresistance. On the other hand, the magnetic field dependence of the dephasing could be described by the influence of the Lorentz force acting perpendiculary to both the Co magnetization and the photocarrier drift directions. Our findings could stimulate the development of fast position sensitive detectors with magnetically tuned magnitude and phase responses.

  10. Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

    Science.gov (United States)

    Cernansky, Robert; Martini, Francesco; Politi, Alberto

    2018-02-01

    We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

  11. Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

    Science.gov (United States)

    Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

    2011-03-01

    An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

  12. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    , which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin

  13. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp){sub 2}, and O{sub 3}, were compared. Exploiting O{sub 3} as oxidizing precursor in the ALD of HfO{sub 2} is shown to play a beneficial role in efficiently improving the electrical quality of the high-k/Ge interface through the pronounced formation of a GeO{sub 2}-like interface layer. In both cases, carefully engineering the chemical nature of the interface by the deliberate deposition of interface passivation layers or by the proper choice of ALD precursors turns out to be a key-step to couple high-k materials with Ge.

  14. Analysis of the capability to effectively design complementary metal oxide semiconductor integrated circuits

    Science.gov (United States)

    McConkey, M. L.

    1984-12-01

    A complete CMOS/BULK design cycle has been implemented and fully tested to evaluate its effectiveness and a viable set of computer-aided design tools for the layout, verification, and simulation of CMOS/BULK integrated circuits. This design cycle is good for p-well, n-well, or twin-well structures, although current fabrication technique available limit this to p-well only. BANE, an integrated layout program from Stanford, is at the center of this design cycle and was shown to be simple to use in the layout of CMOS integrated circuits (it can be also used to layout NMOS integrated circuits). A flowchart was developed showing the design cycle from initial layout, through design verification, and to circuit simulation using NETLIST, PRESIM, and RNL from the University of Washington. A CMOS/BULK library was designed and includes logic gates that were designed and completely tested by following this flowchart. Also designed was an arithmetic logic unit as a more complex test of the CMOS/BULK design cycle.

  15. Calculated and experimental electron energy-loss spectra of La2O3, La(OH)3, and LaOF nanophases in high permittivity lanthanum-based oxide layers

    Science.gov (United States)

    Calmels, L.; Coulon, P. E.; Schamm-Chardon, S.

    2011-06-01

    Using first principles methods, the O K energy-loss near-edge structure of cubic and hexagonal La2O3, La(OH)3, and LaOF phases have been calculated. These calculations support the identification of nanocrystalline phases evidenced experimentally by electron energy-loss spectroscopy (EELS) performed in a transmission electron microscope. The nanocrystals have been observed in atomic layer deposited La2O3 thin films developed for advanced metal-oxide-semiconductor field effect transistor applications. The presence of the nanophases can be explained by the hygroscopicity and the particular reactivity with fluorine of La2O3. These calculations provide a set of EELS fingerprints which will be useful for local phase identification in La2O3-based materials.

  16. Transformational electronics are now reconfiguring

    KAUST Repository

    Rojas, Jhonathan Prieto

    2015-05-22

    Current developments on enhancing our smart living experience are leveraging the increased interest for novel systems that can be compatible with foldable, wrinkled, wavy and complex geometries and surfaces, and thus become truly ubiquitous and easy to deploy. Therefore, relying on innovative structural designs we have been able to reconfigure the physical form of various materials, to achieve remarkable mechanical flexibility and stretchability, which provides us with the perfect platform to develop enhanced electronic systems for application in entertainment, healthcare, fitness and wellness, military and manufacturing industry. Based on these novel structural designs we have developed a siliconbased network of hexagonal islands connected through double-spiral springs, forming an ultra-stretchable (~1000%) array for full compliance to highly asymmetric shapes and surfaces, as well as a serpentine design used to show an ultrastretchable (~800%) and flexible, spatially reconfigurable, mobile, metallic thin film copper (Cu)-based, body-integrated and non-invasive thermal heater with wireless controlling capability, reusability, heating-adaptability and affordability due to low-cost complementary metal oxide semiconductor (CMOS)-compatible integration. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  17. Analysis of emittance compensation and simulation results to photo-cathode RF gun

    CERN Document Server

    LiuShengGuang

    2002-01-01

    The emittance compensation technology will be used on the photo-cathode RF gun for Shanghai SDUV-FEL. The space charge force and its effect on electron beam transverse emittance in RF gun is studied, the principle of emittance compensation in phase-space is discussed. The authors have designed a compensation solenoid and calculated its magnetic field distribution. Its performance has been studied by the code PARMELA. A simulation result indicates that the normalized transverse RMS emittance for electron beam of 1.5 nC is 1.612 pi mm centre dot mrad, electron energy E = 5.71 MeV

  18. Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

    Energy Technology Data Exchange (ETDEWEB)

    Greene-Diniz, Gabriel; Greer, J. C. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Fischetti, M. V. [Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)

    2016-02-07

    Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.

  19. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  20. Measured emittance dependence on injection method in laser plasma accelerators

    Science.gov (United States)

    Barber, Samuel; van Tilborg, Jeroen; Schroeder, Carl; Lehe, Remi; Tsai, Hai-En; Swanson, Kelly; Steinke, Sven; Nakamura, Kei; Geddes, Cameron; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

    2017-10-01

    The success of many laser plasma accelerator (LPA) based applications relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot transverse emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock induced density down-ramp injection. Notably, the measurements reveal that ionization injection results in significantly higher emittance. With the down-ramp injection configuration, emittances less than 1 micron at spectral charge densities up to 2 pC/MeV were measured. This work was supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the NSF under Grant No. PHY-1415596, by the U.S. DOE NNSA, DNN R&D (NA22), and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

  1. Emittance growth in rf linacs

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1979-01-01

    As the space-charge limit is approached, the current that can be accelerated in an rf linac and the output emittance that can be expected are discussed. The role of the envelope equations to estimate limits is outlined. The results of numerical experiments to explore general properties of emittance growth are given

  2. Beam phase space and emittance

    International Nuclear Information System (INIS)

    Buon, J.

    1990-12-01

    The classical and elementary results for canonical phase space, the Liouville theorem and the beam emittance are reviewed. Then, the importance of phase portraits to obtain a geometrical description of motion is emphasized, with examples in accelerator physics. Finally, a statistical point of view is used to define beam emittance, to study its law of approximate conservation and to treat two particular examples

  3. Sub-nanometer emittance monitor for high brightness synchrotron radiation source

    International Nuclear Information System (INIS)

    Nakajima, K.

    1991-01-01

    Method of measuring a very small beam emittance in electron storage rings is presented. The monitor can sense an intrinsic emittance of beam particles by detecting the angular distribution of Compton scatterings of laser photons on beam electrons. It is possible to achieve measurement resolution smaller than 10 -9 m-rad without difficulty. (author)

  4. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  5. Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

    Energy Technology Data Exchange (ETDEWEB)

    Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A. [Russian Academy of Sciences, Budker Institute of Nuclear Physics, Siberian Branch (Russian Federation)

    2017-02-15

    Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surface that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.

  6. A numerical study of emittance growths in RF guns

    CERN Document Server

    Masuda, K; Sobajima, M; Kitagaki, J; Ohnishi, M; Toku, H; Yoshikawa, K

    1999-01-01

    A beam with greatly reduced emittance is required for further improvements of FELs, in particular, for FELs of shorter wavelengths, and of narrower bandwidths. From this viewpoint, the BNL/SLAC/UCLA 1.6-cell S-band photocathode RF gun performance characteristics were calculated, first in order to evaluate what may contribute to the emittance growths in photocathode RF guns. We developed an RF gun to produce an electron beam with an extremely low emittance, by using a 2-D simulation code. It is found that, by optimizing the laser injection phase, the drive laser spot radius and the cavity shape around the laser spot, the beam emittance by the 1.6-cell RF gun can be greatly reduced to 2.1 pi mm mrad, from the previous 4.4 pi mm mrad of the original shape.

  7. An Online Multisensor Data Fusion Framework for Radar Emitter Classification

    Directory of Open Access Journals (Sweden)

    Dongqing Zhou

    2016-01-01

    Full Text Available Radar emitter classification is a special application of data clustering for classifying unknown radar emitters in airborne electronic support system. In this paper, a novel online multisensor data fusion framework is proposed for radar emitter classification under the background of network centric warfare. The framework is composed of local processing and multisensor fusion processing, from which the rough and precise classification results are obtained, respectively. What is more, the proposed algorithm does not need prior knowledge and training process; it can dynamically update the number of the clusters and the cluster centers when new pulses arrive. At last, the experimental results show that the proposed framework is an efficacious way to solve radar emitter classification problem in networked warfare.

  8. Localization of Narrowband Single Photon Emitters in Nanodiamonds.

    Science.gov (United States)

    Bray, Kerem; Sandstrom, Russell; Elbadawi, Christopher; Fischer, Martin; Schreck, Matthias; Shimoni, Olga; Lobo, Charlene; Toth, Milos; Aharonovich, Igor

    2016-03-23

    Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bioimaging. However, current understanding of the origin of these emitters is extremely limited. In this work, we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond and are directly relevant to fabrication of novel quantum optics devices and sensors.

  9. Emittance measurements in low energy ion storage rings

    Science.gov (United States)

    Hunt, J. R.; Carli, C.; Resta-López, J.; Welsch, C. P.

    2018-07-01

    The development of the next generation of ultra-low energy antiproton and ion facilities requires precise information about the beam emittance to guarantee optimum performance. In the Extra-Low ENergy Antiproton storage ring (ELENA) the transverse emittances will be measured by scraping. However, this diagnostic measurement faces several challenges: non-zero dispersion, non-Gaussian beam distributions due to effects of the electron cooler and various systematic errors such as closed orbit offsets and inaccurate rms momentum spread estimation. In addition, diffusion processes, such as intra-beam scattering might lead to emittance overestimates. Here, we present algorithms to efficiently address the emittance reconstruction in presence of the above effects, and present simulation results for the case of ELENA.

  10. Beam dynamics in rf guns and emittance correction techniques

    International Nuclear Information System (INIS)

    Serafini, L.

    1994-01-01

    In this paper we present a general review of beam dynamics in a laser-driven rf gun. The peculiarity of such an accelerating structure versus other conventional multi-cell linac structures is underlined on the basis of the Panofsky-Wenzel theorem, which is found to give a theoretical background for the well known Kim's model. A basic explanation for some proposed methods to correct rf induced emittance growth is also derived from the theorem. We also present three emittance correction techniques for the recovery of space-charge induced emittance growth, namely the optimum distributed disk-like bunch technique, the use of rf spatial harmonics to correct spherical aberration induced by space charge forces and the technique of emittance filtering by clipping the electron beam. The expected performances regarding the beam quality achievable with different techniques, as predicted by scaling laws and simulations, are analyzed, and, where available, compared to experimental results. (orig.)

  11. WE-AB-204-12: Dosimetry at the Sub-Cellular Scale of Auger-Electron Emitter 99m-Tc in a Mouse Single Thyroid Follicle Model

    Energy Technology Data Exchange (ETDEWEB)

    Taborda, A; Benabdallah, N; Desbree, A [Institut de Radioprotection et de Surete Nucleaire, Fontenay-aux-roses (France)

    2015-06-15

    Purpose: To perform a dosimetry study at the sub-cellular scale of Auger-electron emitter 99m-Tc using a mouse single thyroid cellular model to investigate the contribution of the 99m-Tc Auger-electrons to the absorbed dose and possible link to the thyroid stunning in in vivo experiments in mice, recently reported in literature. Methods: The simulation of S-values for Auger-electron emitting radionuclides was performed using both the recent MCNP6 software and the Geant4-DNA extension of the Geant4 toolkit. The dosimetric calculations were validated through comparison with results from literature, using a simple model of a single cell consisting of two concentric spheres of unit density water and for six Auger-electron emitting radionuclides. Furthermore, the S-values were calculated using a single thyroid follicle model for uniformly distributed 123-I and 125-I radionuclides and compared with published S-values. After validation, the simulation of the S-values was performed for the 99m-Tc radionuclide within the several mouse thyroid follicle cellular compartments, considering the radiative and non-radiative transitions of the 99m-Tc radiation spectrum. Results: The calculated S-values using MCNP6 are in good agreement with the results from literature, validating its use for the 99m-Tc S-values calculations. The most significant absorbed dose corresponds to the case where the radionuclide is uniformly distributed in the follicular cell’s nucleus, with a S-value of 7.8 mGy/disintegration, due mainly to the absorbed Auger-electrons. The results show that, at a sub-cellular scale, the emitted X-rays and gamma particles do not contribute significantly to the absorbed dose. Conclusion: In this work, MCNP6 was validated for dosimetric studies at the sub-cellular scale. It was shown that the contribution of the Auger-electrons to the absorbed dose is important at this scale compared to the emitted photons’ contribution and can’t be neglected. The obtained S

  12. Transverse and longitudinal emittance measurements in the ELSA linac

    International Nuclear Information System (INIS)

    Loulergue, A.; Dowell, D.H.; Joly, S.; De Brion, J.P.; Haouat, G.; Schumann, F.

    1997-01-01

    The ELSA RF linac photoinjector has been designed to deliver high-brightness electron beams. The present paper deals with the transverse and longitudinal emittance measurements, at different locations along the ELSA beam line, and the analysis of their variations as a function of the photoinjector parameters : magnetic field generated by the anode focusing lens, bunch charge and pulse duration. While transverse emittance has been already studied in other similar installations, there has been little study of the electron beam longitudinal dynamics. Experimental results are presented and compared to simulation-code expectations. For 2.0 nC, 85 A electron bunches, a normalized rms emittance of 2 π mm mrad and a brightness of 4.5 x 10 13 A/(π m rad) 2 at the linac exit have been measured as well as less than 10 keV rms energy spread (or less than 0.1% at 16.5 MeV). (orig.)

  13. DC-SC Photoinjector with Low Emittance at Peking University

    CERN Document Server

    Xiang Rong; Hao, J; Huang, Senlin; Lu Xiang Yang; Quan, Shengwen; Zhang, Baocheng; Zhao, Kui

    2005-01-01

    High average power Free Electron Lasers require the high quality electron beams with the low emittance and the sub-picosecond bunches. The design of DC-SC photoinjector, directly combining a DC photoinjector with an SRF cavity, can produce high average current beam with moderate bunch charge and high duty factor. Because of the DC gun, the emittance increases quickly at the beginning, so a carefully design is needed to control that. In this paper, the simulation of an upgraded design has been done to lower the normalized emittance below 1.5mm·mrad. The photoinjector consists of a DC gap and a 2+1/2-cell SRF cavity, and it is designed to produce 4.2 MeV electron beams at 100pC bunch charge and 81.25MHz repetition rate (8 mA average current).

  14. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-07-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

  15. Electrohydrodynamic emitters of ion beams

    International Nuclear Information System (INIS)

    Dudnikov, V.G.; Shabalin, A.L.

    1990-01-01

    Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

  16. Nanodiamond Emitters of Single Photons

    Directory of Open Access Journals (Sweden)

    Vlasov I.I.

    2015-01-01

    Full Text Available Luminescence properties of single color centers were studied in nanodiamonds of different origin. It was found that single photon emitters could be realized even in molecularsized diamond (less than 2 nm capable of housing stable luminescent center “silicon-vacancy.” First results on incorporation of single-photon emitters based on luminescent nanodiamonds in plasmonic nanoantennas to enhance the photon count rate and directionality, diminish the fluorescence decay time, and provide polarization selectivity are presented.

  17. Beam emittance reduction during operation of Indus-2

    Energy Technology Data Exchange (ETDEWEB)

    Fakhri, Ali Akbar, E-mail: fakhri@rrcat.gov.in; Kant, Pradeep; Ghodke, A. D.; Singh, Gurnam [Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2015-11-15

    Indus-2 storage ring is a 2.5 GeV third generation synchrotron radiation source. This source was commissioned using a moderate optics. Beam injection was accomplished using an off momentum electron beam to avoid difficulties faced in storage of beam at 550 MeV. The injection procedure and relevant beam dynamical studies are discussed. The switch over from the moderate optics to low emittance optics is done at 2.5 GeV after storing the electron beam. The procedure evolved to reduce the beam emittance and its implementation during the operation is discussed.

  18. Graphene field emitters: A review of fabrication, characterization and properties

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Leifeng, E-mail: chlf@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yu, Hu; Zhong, Jiasong; Song, Lihui [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wu, Jun, E-mail: wujun@hdu.edu.cn [Institute of Electron Device & Application, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018 (China); Su, Weitao [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2017-06-15

    Highlights: • The preparation, characterization and field emission properties for Gs are reviewed. • The review provides an updated progress on design and construction of Gs field emitters. • The review offers fundamental insights into understanding and design of Gs emitters. • The review can broach the subject and inspire readers in field of Gs based emitters. - Abstract: Graphenes are beneficial to electrons field emission due to its high aspect ratio, high carrier density, the larger carrier mobility, excellent electrical and thermal conductivity, excellent mechanical strength and chemical stability. In recent years, graphene or reduced oxide graphene field emitters have been successfully constructed by various methods such as chemical vapor deposition, chemical exfoliation, electrophoretic deposition, screen-printing and chemical synthesis methods. Graphene emitters are tried to construct in distribution with some angles or vertical orientation with respect to the substrate surface. The vertical alignment of graphene sheets or edges arrays can facilitate efficient electron emission from the atomically thick sheets. Therefore they have even more a low turn-on and threshold-field electronic field, high field enhancement factor, high current stability and high luminance. In this review, we shortly survey and discuss recent research progress in graphene field emission properties with particular an emphasis on their preparing method, characterization and applications in devices especially for vertical graphene and single layer graphene, also including their challenges and future prospects.

  19. Experimental investigation of thermal emittance components of copper photocathode

    Directory of Open Access Journals (Sweden)

    H. J. Qian

    2012-04-01

    Full Text Available With progress of photoinjector technology, thermal emittance has become the primary limitation of electron beam brightness. Extensive efforts have been devoted to study thermal emittance, but experiment results differ between research groups and few can be well interpreted. Besides the ambiguity of photoemission mechanism, variations of cathode surface conditions during cathode preparation, such as work function, field enhancement factor, and surface roughness, will cause thermal emittance differences. In this paper, we report an experimental study of electric field dependence of copper cathode quantum efficiency (QE and thermal emittance in a radio frequency (rf gun, through which in situ cathode surface parameters and thermal emittance contributions from photon energy, Schottky effect, and surface roughness are extracted. It is found the QE of a copper cathode illuminated by a 266 nm UV laser increased substantially to 1.5×10^{-4} after cathode cleaning during rf conditioning, and a copper work function of 4.16 eV, which is much lower than nominal value (4.65 eV, was measured. Experimental results also show a thermal emittance growth as much as 0.92  mm mrad/mm at 50  MV/m due to the cathode surface roughness effect, which is consistent with cathode surface morphology measurements.

  20. Investigations on cermet electrodes for thermionic emitters

    International Nuclear Information System (INIS)

    Schmidt, D.; Nazare, S.

    1975-01-01

    Unstable Ba 2 CaWO 6 -W with their own supply of Ba, as well as stable UO 2 -Mo-emitter cermets that have to be operated with an external Ba-source, have been prepared by axial hot pressing. The relevant properties of these cermets such as electrical resistivity and thermal expansion are reported and compared with theoretical predictions. The electron emission of these materials is discussed on the basis of the surface films formed. It provides the basis for optimising the behavior of these materials

  1. CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

    KAUST Repository

    Hussain, Aftab M.

    2015-11-26

    Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today\\'s digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Oxide bipolar electronics: materials, devices and circuits

    International Nuclear Information System (INIS)

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

    2016-01-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

  3. Transverse-to-longitudinal Emittance-exchange with an Energy Chirped Beam

    Energy Technology Data Exchange (ETDEWEB)

    Thangaraj, J.; Ruan, J.; Johnson, A.S.; Thurman-Keup, R.; Lumpkin, A.H.; Santucci, J.; Sun, Y.-E; Maxwell, T.; Edwards, H.; /Fermilab

    2012-05-01

    Emittance exchange has been proposed to increase the performance of free electron lasers by tailoring the phase space of an electron beam. The principle of emittance exchange - where the transverse phase space of the electron beam is exchanged with the longitudinal phase space - has been demonstrated recently at the A0 photoinjector. The experiment used a low charge bunch (250 pC) with no energy chirp. Theory predicts an improvement in the emittance exchange scheme when the incoming beam has an energy chirp imparted on it. The energy chirp helps to overcome the thick lens effect of the deflecting mode cavity and other second order effects that might lead to an incomplete emittance exchange at higher charges. In this work, we report experimental and simulation results from operating the emittance exchange beam line using an energy chirped beam with higher charge (500 pC) at different RF-chirp settings.

  4. Transverse emittance growth in staged laser-wakefield acceleration

    Directory of Open Access Journals (Sweden)

    T. Mehrling

    2012-11-01

    Full Text Available We present a study on the emittance evolution of electron bunches, externally injected into laser-driven plasma waves using the three-dimensional particle-in-cell (PIC code OSIRIS. Results show order-of-magnitude transverse emittance growth during the injection process, if the electron bunch is not matched to its intrinsic betatron motion inside the wakefield. This behavior is supported by analytic theory reproducing the simulation data to a percent level. The length over which the full emittance growth develops is found to be less than or comparable to the typical dimension of a single plasma module in current multistage designs. In addition, the analytic theory enables the quantitative prediction of emittance degradation in two consecutive accelerators coupled by free-drift sections, excluding this as a scheme for effective emittance-growth suppression, and thus suggests the necessity of beam-matching sections between acceleration stages with fundamental implications on the overall design of staged laser-wakefield accelerators.

  5. Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams.

    Science.gov (United States)

    Manigandan, D; Bharanidharan, G; Aruna, P; Devan, K; Elangovan, D; Patil, Vikram; Tamilarasan, R; Vasanthan, S; Ganesan, S

    2009-09-01

    The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured with a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23-40 degrees C. The energy dependence of a MOSFET dosimeter was within +/-3.0% for 6-18MeV electron beams and 5.5% for 4MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4-18MeV.

  6. Rotational total skin electron irradiation with a linear accelerator

    Science.gov (United States)

    Evans, Michael D.C.; Devic, Slobodan; Parker, William; Freeman, Carolyn R.; Roberge, David; Podgorsak, Ervin B.

    2008-01-01

    The rotational total skin electron irradiation (RTSEI) technique at our institution has undergone several developments over the past few years. Replacement of the formerly used linear accelerator has prompted many modifications to the previous technique. With the current technique, the patient is treated with a single large field while standing on a rotating platform, at a source‐to‐surface distance of 380 cm. The electron field is produced by a Varian 21EX linear accelerator using the commercially available 6 MeV high dose rate total skin electron mode, along with a custom‐built flattening filter. Ionization chambers, radiochromic film, and MOSFET (metal oxide semiconductor field effect transistor) detectors have been used to determine the dosimetric properties of this technique. Measurements investigating the stationary beam properties, the effects of full rotation, and the dose distributions to a humanoid phantom are reported. The current treatment technique and dose regimen are also described. PACS numbers: 87.55.ne, 87.53.Hv, 87.53.Mr

  7. Radiation emitter-detector package

    International Nuclear Information System (INIS)

    O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

    1978-01-01

    Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

  8. Secondary electron ion source neutron generator

    Science.gov (United States)

    Brainard, John P.; McCollister, Daryl R.

    1998-01-01

    A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter. The target contains occluded deuterium, tritium, or a mixture thereof

  9. Emittance growth of bunched beams in bends

    International Nuclear Information System (INIS)

    Carlsten, B.E.; Raubenheimer, T.O.

    1995-01-01

    Talman [Phys. Rev. Lett. 56, 1429 (1986)] has proposed a novel relativistic effect that occurs when a charged particle beam is bent in the magnetic field from an external dipole. The consequence of this effect is that the space-charge forces from the particles do not exhibit the usual inverse-square energy dependence and some part of them are, in fact, independent of energy. This led to speculation that this effect could introduce significant emittance growth for a bending electron beam. Subsequently, it was shown that this effect's influence on the beam's transverse motion is canceled for a dc beam by a potential depression within the beam (to first order in the beam radius divided by the bend radius). In this paper, we extend the analysis to include short bunch lengths (as compared to the beam pipe dimensions) and find that there is no longer the cancellation for forces both transverse to and in the direction of motion. We provide an estimate for the emittance growth as a function of bend angle, beam radius, and current, and for magnetic compression of an electron bunch

  10. Beam phase space and emittance

    International Nuclear Information System (INIS)

    Buon, J.

    1992-02-01

    The classical and elementary results for canonical phase space, the Liouville theorem and the beam emittance are reviewed. Then, the importance of phase portraits to obtain a geometrical description of motion is emphasized, with examples in accelerator physics. Finally, a statistical point of view is used to define beam emittance, to study its law of approximate conservation, with three particular examples, and to introduce a beam envelope-ellipse and the β-function, emphasing the statistical features of its properties. (author) 14 refs.; 11 figs

  11. Combustion powered thermophotovoltaic emitter system

    Energy Technology Data Exchange (ETDEWEB)

    McHenry, R.S. [Naval Academy, Annapolis, MD (United States). Naval Architecture, Ocean and Marine Engineering

    1995-07-01

    The US Naval Academy (USNA) has recently completed an engineering design project for a high temperature thermophotovoltaic (TPV) photon emitter. The final apparatus was to be portable, completely self contained, and was to incorporate cycle efficiency optimization such as exhaust stream recuperation. Through computer modeling and prototype experimentation, a methane fueled emitter system was designed from structural ceramic materials to fulfill the high temperature requirements necessary for high system efficiency. This paper outlines the engineering design process, discusses obstacles and solutions encountered, and presents the final design.

  12. Emittances Studies at the Fermilab/NICADD Photoinjector Laboratory

    CERN Document Server

    Tikhoplav, Rodion; Melissinos, A C; Regis-Guy Piot, Philippe

    2005-01-01

    The Fermilab/NICADD photoinjector incorporates an L-band rf-gun capable of generating 1-10 nC bunches. The bunches are then accelerated to 16 MeV with a TESLA superconducting cavity. In the present paper we present parametric studies of transverse emittances and energy spread for a various operating points of the electron source (RF-gun E-field, laser length and spot size, and solenoid settings). We especially study the impact, on transverse emittance, of Gaussian and Plateau temporal distribution of the photocathode drive-laser.

  13. Auger electron emitter against multiple myeloma - targeted endo-radio-therapy with {sup 125}I-labeled thymidine analogue 5-iodo-4'-thio-2'-deoxyuridine

    Energy Technology Data Exchange (ETDEWEB)

    Morgenroth, Agnieszka, E-mail: amorgenroth@ukaachen.de [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany); Nuclear Medicine Clinic, University Aachen, RWTH, Pauwelsstrasse 30, D-52074 Aachen (Germany); Dinger, Cornelia; Zlatopolskiy, Boris D.; Al-Momani, Ehab; Glatting, Gerhard [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany); Mottaghy, Felix M. [Nuclear Medicine Clinic, University Aachen, RWTH, Pauwelsstrasse 30, D-52074 Aachen (Germany); Reske, Sven N. [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany)

    2011-10-15

    Introduction: Multiple myeloma (MM) is a plasma cell malignancy characterized by accumulation of malignant, terminally differentiated B cells in the bone marrow. Despite advances in therapy, MM remains an incurable disease. Novel therapeutic approaches are, therefore, urgently needed. Auger electron-emitting radiopharmaceuticals are attractive for targeted nano-irradiation therapy, given that DNA of malignant cells is selectively addressed. Here we evaluated the antimyeloma potential of the Auger electron-emitting thymidine analogue {sup 125}I-labeled 5-iodo-4'-thio-2'-deoxyuridine ([{sup 125}I]ITdU). Methods: Cellular uptake and DNA incorporation of [{sup 125}I]ITdU were determined in fluorodeoxyuridine-pretreated KMS12BM, U266, dexamethasone-sensitive MM1.S and -resistant MM1.R cell lines. The effect of stimulation with interleukin 6 (IL6) or insulin-like growth factor 1 (IGF1) on the intracellular incorporation of [{sup 125}I]ITdU was investigated in cytokine-sensitive MM1.S and MM1.R cell lines. Apoptotic cells were identified using Annexin V. Cleavage of caspase 3 and PARP was visualized by Western blot. DNA fragmentation was investigated using laddering assay. Therapeutic efficiency of [{sup 125}I]ITdU was proven by clonogenic assay. Results: [{sup 125}I]ITdU was shown to be efficiently incorporated into DNA of malignant cells, providing a promising mechanism for delivering highly toxic Auger radiation emitters into tumor DNA. [{sup 125}I]ITdU had a potent antimyeloma effect in cell lines representing distinct disease stages and, importantly, in cell lines sensitive or resistant to the conventional therapeutic agent, but was not toxic for normal plasma and bone marrow stromal cells. Furthermore, [{sup 125}I]ITdU abrogated the protective actions of IL6 and IGF1 on MM cells. [{sup 125}I]ITdU induced massive damage in the DNA of malignant plasma cells, which resulted in efficient inhibition of clonogenic growth. Conclusion: These studies may provide a

  14. Emittance studies of the BNL/SLAC/UCLA 1.6 cell photocathode rf gun

    International Nuclear Information System (INIS)

    Palmer, D.T.; Miller, R.H.; Wang, X.J.

    1997-01-01

    The symmetrized 1.6 cell S-band photocathode gun developed by the BNL/SLAC/UCLA collaboration is in operation at the Brookhaven Accelerator Test Facility (ATF). A novel emittance compensation solenoid magnet has also been designed, built and is in operation at the ATF. These two subsystems form an emittance compensated photoinjector used for beam dynamics, advanced acceleration and free electron laser experiments at the ATF. The highest acceleration field achieved on the copper cathode is 150 MV/m, and the guns normal operating field is 130 MV/m. The maximum rf pulse length is 3 micros. The transverse emittance of the photoelectron beam were measured for various injection parameters. The 1 nC emittance results are presented along with electron bunch length measurements that indicated that at above the 400 pC, space charge bunch lengthening is occurring. The thermal emittance, ε o , of the copper cathode has been measured

  15. Emittance growth in the DARHT Axis-II Downstream Transport

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Jr., Carl August [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schulze, Martin E. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-04-14

    Using a particle-in-cell (PIC) code, we investigated the possibilities for emittance growth through the quadrupole magnets of the system used to transport the high-current electron beam from an induction accelerator to the bremsstrahlung converter target used for flash radiography. We found that even highly mismatched beams exhibited little emittance growth (< 6%), which we attribute to softening of their initial hard edge current distributions. We also used this PIC code to evaluate the accuracy of emittance measurements using a solenoid focal scan following the quadrupole magnets. If the beam is round after the solenoids, the simulations indicate that the measurement is highly accurate, but it is substantially inaccurate for elliptical beams

  16. Design of power electronics for TVC EMA systems

    Science.gov (United States)

    Nelms, R. Mark

    1993-08-01

    The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

  17. Single-electron transistors fabricated with sidewall spacer patterning

    Science.gov (United States)

    Park, Byung-Gook; Kim, Dae Hwan; Kim, Kyung Rok; Song, Ki-Whan; Lee, Jong Duk

    2003-09-01

    We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transistor (DGSET) and metal-oxide-semiconductor-based SET (MOSET) based on the uniform SOI wire, using conventional lithography and processing technology. A 30 nm wide silicon quantum wire is defined by a sidewall spacer patterning method, and depletion gates for two tunnel junctions of the DGSET are formed by the doped polycrystalline silicon sidewall. The fabricated DGSET and MOSET show clear single-electron tunneling phenomena at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. On the basis of the phase control capability of the sidewall depletion gates, we have proposed a complementary self-biasing method, which enables the SET/CMOS hybrid multi-valued logic (MVL) to operate perfectly well at high temperature, where the peak-to-valley current ratio of Coulomb oscillation severely decreases. The suggested scheme is evaluated by SPICE simulation with an analytical DGSET model, and it is confirmed that even DGSETs with a large Si island can be utilized efficiently in the multi-valued logic.

  18. Classification of buildings mold threat using electronic nose

    Science.gov (United States)

    Łagód, Grzegorz; Suchorab, Zbigniew; Guz, Łukasz; Sobczuk, Henryk

    2017-07-01

    Mold is considered to be one of the most important features of Sick Building Syndrome and is an important problem in current building industry. In many cases it is caused by the rising moisture of building envelopes surface and exaggerated humidity of indoor air. Concerning historical buildings it is mostly caused by outdated raising techniques among that is absence of horizontal isolation against moisture and hygroscopic materials applied for construction. Recent buildings also suffer problem of mold risk which is caused in many cases by hermetization leading to improper performance of gravitational ventilation systems that make suitable conditions for mold development. Basing on our research there is proposed a method of buildings mold threat classification using electronic nose, based on a gas sensors array which consists of MOS sensors (metal oxide semiconductor). Used device is frequently applied for air quality assessment in environmental engineering branches. Presented results show the interpretation of e-nose readouts of indoor air sampled in rooms threatened with mold development in comparison with clean reference rooms and synthetic air. Obtained multivariate data were processed, visualized and classified using a PCA (Principal Component Analysis) and ANN (Artificial Neural Network) methods. Described investigation confirmed that electronic nose - gas sensors array supported with data processing enables to classify air samples taken from different rooms affected with mold.

  19. Measuring emittances and sigma matrices

    International Nuclear Information System (INIS)

    Rees, J.; Rivkin, L.

    1984-03-01

    The method used for measuring emittance at the SLAC Linac and the linear collider damping ring is described. The basis of the method is derived using one two-by-two matrix to specify the state of the input beam (sigma matrix) and another to describe the lens-drift transport system (R-matrix)

  20. Emittance growth and tune spectra at PETRA III

    International Nuclear Information System (INIS)

    Wanzenberg, R.

    2011-08-01

    At DESY the PETRA ring has been converted into a synchrotron radiation facility, called PETRA III. 20 damping wigglers have been installed to achieve an emittance of 1 nm. The commissioning with beam started in April 2009 and user runs have been started in 2010. The design current is 100 mA and the bunch to bunch distance is 8 ns for one particular filling pattern with 960 bunches. At a current of about 50 mA a strong vertical emittance increase has been observed. During machine studies it was found that the emittance increase depends strongly on the bunch filling pattern. For the user operation a filling scheme has been found which mitigates the increase of the vertical emittance. In August 2010 PETRA III has been operated without damping wigglers for one week. The vertical emittance growth was not significantly smaller without wigglers. Furthermore tune spectra at PETRA III show characteristic lines which have been observed at other storage rings in the connection with electron clouds. Measurements at PETRA III are presented for different bunch filling patterns and with and without wiggler magnets. (orig.)

  1. Monte Carlo Transverse Emittance Study on Cs2Te

    CERN Document Server

    Banfi, F; Galimberti, P G; Giannetti, C; Pagliara, S; Parmigiani, F; Pedersoli, E

    2005-01-01

    A Monte Carlo study of electron transport in Cs2Te films is performed to investigate the transverse emittance epsilon at the cathode surface. We find the photoemitted electron angular distribution and explain the physical mechanism involved in the process, a mechanism hindered by the statistical nature of the Monte Carlo method. The effects of electron-phonon scattering are discussed. The transverse emittance is calculated for different radiation wavelengths and a laser spot size of 1.5*10(-3) m. For a laser radiation at 265 nm we find epsilon = 0.56 mm-mrad. The dependence of epsilon and the quantum yield on the electron affinity Ea is also investigated. The data shows the importance of aging/contamination on the material.

  2. Multi-gated field emitters for a micro-column

    International Nuclear Information System (INIS)

    Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

    2011-01-01

    We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

  3. Experimental observation of the improvement in MTF from backthinning a CMOS direct electron detector

    International Nuclear Information System (INIS)

    McMullan, G.; Faruqi, A.R.; Henderson, R.; Guerrini, N.; Turchetta, R.; Jacobs, A.; Hoften, G. van

    2009-01-01

    The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or DQE). It was suggested that a 'thin' CMOS detector would have the most outstanding properties because of a reduction in the proportion of backscattered electrons. In this paper we show, theoretically (using Monte Carlo simulations of electron trajectories) and experimentally that this is indeed the case. The modulation transfer functions of prototype backthinned CMOS direct electron detectors have been measured at 300 keV. At zero spatial frequency, in non-backthinned 700-μm-thick detectors, the backscattered component makes up over 40% of the total signal but, by backthinning to 100, 50 or 35 μm, this can be reduced to 25%, 15% and 10%, respectively. For the 35 μm backthinned detector, this reduction in backscatter increases the MTF by 40% for spatial frequencies between 0.1 and 1.0 Nyquist. As discussed in the main text, reducing backscattering in backthinned detectors should also improve DQE.

  4. Dosimetry of internal emitters - quo vadis?

    International Nuclear Information System (INIS)

    Reddy, A.R.; Nagaratnam, A.; Jain, S.C.; Gupta, M.M.; Mehta, S.C.

    1999-01-01

    The dosimetry of internally administered radiopharmaceuticals in nuclear medicine procedures using MIRD formalisms and dosimetry in the case of intakes of radionuclides and ICRP methodology for the purpose of radiological protection are well established working practices. It should, however, be remembered that dose or dose coefficients calculated refer to a reference individual, defined in terms of a mathematical phantom established on the basis of certain biokinetic reference parameters. The reference individual represents a typical caucasian adult of West Europe or North American origin. Recently, some attempts have been made to define a Reference Asian and a Reference Indian individual and to assess the effects of anatomical differences and changes in the biokinetics of radiopharmaceuticals and other radionuclides in these different reference individuals on the estimation of dose and dose coefficients in relation to the intake of internal radionuclides. The assessment of doses to the embryo/fetus due to intake of radionuclides by pregnant women, local dose estimates, microdosimetry, radiobiology and radiation protection aspects relating to Auger electron emitters represent other areas of active research in the area of dosimetry of internal emitters. The present review summarises these different aspects of work. (orig.) [de

  5. Source brightness and useful beam current of carbon nanotubes and other very small emitters

    International Nuclear Information System (INIS)

    Kruit, P.; Bezuijen, M.; Barth, J.E.

    2006-01-01

    The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources. Many analytical equations for probe-size versus probe-current relations in different parameter regimes are obtained. It is shown that for most carbon nanotube emitters, the gun lens aberrations are larger than the emitters' virtual source size and thus restrict the microscope's performance. The result is that the advantages of the higher brightness of nanotube emitters are limited unless the angular emission current is increased over present day values or the gun lens aberrations are decreased. For some nanotubes with a closed cap, it is known that the emitted electron beam is coherent over the full emission cone. We argue that for such emitters the parameter ''brightness'' becomes meaningless. The influence of phase variations in the electron wave front emitted from such a nanotube emitter on the focusing of the electron beam is analyzed

  6. Study on cell survival, induction of apoptosis and micronucleus formation in SCL-II and RTiV3 cells after exposure to the Auger electron emitter Tc-99m

    International Nuclear Information System (INIS)

    Kadenbach, K.; Kriehuber, R.; Weiss, D.G.

    2003-01-01

    Full text: Cell survival, induction of apoptosis and micronucleus (MN) formation have been investigated in the human squamous cell carcinoma cell line SCL-II and in the rat tracheal cell line RTiV3 after exposure to the Auger electron emitter Tc-99m. Cells were either acutely gamma(Co-60)-irradiated (0.78 Gy/min) or exposed to Tc-99m-Pertechnetate (25-300 MBq/20ml) for 24 h under cell culture conditions and assayed for cell survival (Colony-forming assay), micronucleus formation (Cytochalasin B assay) and the frequency of apoptotic cells (Fluorescence microscopy). Analytical dosimetrical models have been applied to derive the absorbed dose corresponding to the accumulated decays of Tc-99m. Absorbed doses up to 1.3 Gy could be achieved after Tc-99m exposure leading to no significant cell killing in this dose range except at one dose point (0.25 Gy) in SCL-II cells. MN formation was consistently lower when compared to Co-60 irradiated cells and showed a linear dose-response. The apoptotic response in SCL-II cells after Tc-99m exposure was described best by a 3rd order polynomial and increased apoptosis induction could be observed at much lower doses (0.25 Gy) in comparison to the reference radiation (0.8 Gy). The relative biological effectiveness (RBE) has been determined for MN formation and apoptosis induction and was found to be in the range of 0.1- 1.3 for both investigated biological endpoints, depending on which mathematical model for describing the dose-effect curve was used. Up-take experiments revealed an activity concentration ratio cells vs. medium of 1.2 after 16 h up to 24 h of exposure. No increased biological effectiveness of Tc-99m applied as Sodium-Pertechnetate could be observed in the investigated cell lines in comparison to gamma-irradiation. Induction of apoptosis is slightly increased after Tc-99m exposure in SCL-II cells and it has to be further evaluated, if this is due to the emitted Auger-component. A passive up-take mechanism of Tc-99m is

  7. Sources of Emittance in RF Photocathode Injectors

    Energy Technology Data Exchange (ETDEWEB)

    Dowell, David [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2016-12-11

    Advances in electron beam technology have been central to creating the current generation of x-ray free electron lasers and ultra-fast electron microscopes. These once exotic devices have become essential tools for basic research and applied science. One important beam technology for both is the electron source which, for many of these instruments, is the photocathode RF gun. The invention of the photocathode gun and the concepts of emittance compensation and beam matching in the presence of space charge and RF forces have made these high-quality beams possible. Achieving even brighter beams requires a taking a finer resolution view of the electron dynamics near the cathode during photoemission and the initial acceleration of the beam. In addition, the high brightness beam is more sensitive to degradation by the optical aberrations of the gun’s RF and magnetic lenses. This paper discusses these topics including the beam properties due to fundamental photoemission physics, space charge effects close to the cathode, and optical distortions introduced by the RF and solenoid fields. Analytic relations for these phenomena are derived and compared with numerical simulations.

  8. Emittance control and RF bunch compression in the NSRRC photoinjector

    International Nuclear Information System (INIS)

    Lau, W.K.; Hung, S.B.; Lee, A.P.; Chou, C.S.; Huang, N.Y.

    2011-01-01

    The high-brightness photoinjector being constructed at the National Synchrotron Radiation Research Center is for testing new accelerator and light-source concepts. It is the so-called split photoinjector configuration in which a short solenoid magnet is used for emittance compensation. The UV-drive laser pulses are also shaped to produce uniform cylindrical bunches for further reduction of beam emittance. However, limited by the available power from our microwave power system, the nominal accelerating gradient in the S-band booster linac is set at 18 MV/m. A simulation study with PARMELA shows that the linac operating at this gradient fails to freeze the electron beam emittance at low value. A background solenoid magnetic field is applied for beam emittance control in the linac during acceleration. A satisfactory result that meets our preliminary goal has been achieved with the solenoid magnetic field strength at 0.1 T. RF bunch compression as a means to achieve the required beam brightness for high-gain free-electron laser experiments is also examined. The reduction of bunch length to a few hundred femtoseconds can be obtained.

  9. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

    Science.gov (United States)

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

    2017-03-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  10. Perturbation of the Electron Transport Mechanism by Proton Intercalation in Nanoporous TiO2 Films

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, A. F.; Zhu, K.; Erslev, P. T.; Kim, J. Y.; Neale, N. R.; Frank, A. J.

    2012-04-11

    This study addresses a long-standing controversy about the electron-transport mechanism in porous metal oxide semiconductor films that are commonly used in dye-sensitized solar cells and related systems. We investigated, by temperature-dependent time-of-flight measurements, the influence of proton intercalation on the electron-transport properties of nanoporous TiO{sub 2} films exposed to an ethanol electrolyte containing different percentages of water (0-10%). These measurements revealed that increasing the water content in the electrolyte led to increased proton intercalation into the TiO{sub 2} films, slower transport, and a dramatic change in the dependence of the thermal activation energy (E{sub a}) of the electron diffusion coefficient on the photogenerated electron density in the films. Random walk simulations based on a microscopic model incorporating exponential conduction band tail (CBT) trap states combined with a proton-induced shallow trap level with a long residence time accounted for the observed effects of proton intercalation on E{sub a}. Application of this model to the experimental results explains the conditions under which E{sub a} dependence on the photoelectron density is consistent with multiple trapping in exponential CBT states and under which it appears at variance with this model.

  11. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  12. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  13. Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

    Directory of Open Access Journals (Sweden)

    Salman Shafqat

    2017-09-01

    Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

  14. A New Design Strategy for Efficient Thermally Activated Delayed Fluorescence Organic Emitters: From Twisted to Planar Structures

    KAUST Repository

    Chen, Xiankai; Tsuchiya, Youichi; Ishikawa, Yuma; Zhong, Cheng; Adachi, Chihaya; Bredas, Jean-Luc

    2017-01-01

    In the traditional molecular design of thermally activated delayed fluorescence (TADF) emitters composed of electron-donor and electron-acceptor moieties, achieving a small singlet-triplet energy gap (ΔEST ) in strongly twisted structures usually

  15. Alpha particle emitters in medicine

    International Nuclear Information System (INIS)

    Fisher, D.R.

    1989-09-01

    Radiation-induced cancer of bone, liver and lung has been a prominent harmful side-effect of medical applications of alpha emitters. In recent years, however, the potential use of antibodies labeled with alpha emitting radionuclides against cancer has seemed promising because alpha particles are highly effective in cell killing. High dose rates at high LET, effectiveness under hypoxic conditions, and minimal expectancy of repair are additional advantages of alpha emitters over antibodies labeled with beta emitting radionuclides for cancer therapy. Cyclotron-produced astatine-211 ( 211 At) and natural bismuth-212 ( 212 Bi) have been proposed and are under extensive study in the United States and Europe. Radium-223 ( 223 Ra) also has favorable properties as a potential alpha emitting label, including a short-lived daughter chain with four alpha emissions. The radiation dosimetry of internal alpha emitters is complex due to nonuniformly distributed sources, short particle tracks, and high relative specific ionization. The variations in dose at the cellular level may be extreme. Alpha-particle radiation dosimetry, therefore, must involve analysis of statistical energy deposition probabilities for cellular level targets. It must also account fully for nonuniform distributions of sources in tissues, source-target geometries, and particle-track physics. 18 refs., 4 figs

  16. Achievement of ultralow emittance coupling in the Australian Synchrotron storage ring

    Directory of Open Access Journals (Sweden)

    R. Dowd

    2011-01-01

    Full Text Available Investigations into producing an electron beam with ultralow vertical emittance have been conducted using the Australian Synchrotron 3 GeV storage ring. A method of tuning the emittance coupling (ϵ_{y}/ϵ_{x} has been developed using a machine model calibrated through the linear optics from closed orbits method. Direct measurements of the beam emittance have not been possible due to diagnostic limitations, however two independent indirect measurements both indicate a vertical emittance of 1.2–1.3 pm rad (ϵ_{y}/ϵ_{x}=0.01%. Other indirect measurements support the validity of these results. This result is the smallest vertical emittance currently achieved in a storage ring.

  17. International Standardization of Pure Beta Emitters

    International Nuclear Information System (INIS)

    Los Arcos, Jose Maria; Rodriguez, Leonor

    2006-01-01

    The paper describes the traditional methods of standardization of Pure Beta Emitters, their principal characteristics, advantage and drawbacks. It does comparisons between two metrological LSC methods: Triple to double coincidence ratio (TDCR) method and the CIEMAT/NIST method and presents the result obtained with several Key Comparisons serving as practical test of both methods. Both of them represent the siferrit of methods of standardization of pure (and mixed decay) radionuclides. ESIR WG of CCRI(II) is to implement a reference exchange system for the permanent equivalence of β, α and electron capture nuclides, similar to traditional SIR gamma. ESIR project is currently testing a new XAN scintillator and operational tests of the whole system at BIPM are expected by the end of 2006 (test restricted to ESIR NMI members)

  18. Electronic technology

    International Nuclear Information System (INIS)

    Kim, Jin Su

    2010-07-01

    This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

  19. Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

    Science.gov (United States)

    Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

    2015-03-12

    Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

  20. Compact Rare Earth Emitter Hollow Cathode

    Science.gov (United States)

    Watkins, Ronald; Goebel, Dan; Hofer, Richard

    2010-01-01

    A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this

  1. Investigations on the transverse phase space at a photo injector for minimized emittance

    Energy Technology Data Exchange (ETDEWEB)

    Miltchev, V.

    2006-08-15

    Radio frequency photoinjectors are electron sources able to generate beams of extremely high brightness, which are applicable to linac driven Free Electron Lasers (FEL). Because of the high phase space density, the dynamics of the electron beam is dominated by space charge interactions between the particles. This thesis studies the transverse phase space of space charge dominated electron beams produced by the Photo Injector Test Facility in Zeuthen (PITZ). The operation conditions for minimizing the transverse emittance are studied experimentally, theoretically and in simulations. The influence of the longitudinal profile of the driving UV laser pulse on the transverse emittance is investigated. Emphasis is placed on the experimental study of the emittance as a function of different machine parameters like the laser beam spot size, the amplitude of the focusing magnetic field, the rf phase and the electron bunch charge. First investigations on the thermal emittance for Cs{sub 2}Te photocathodes under rf operating conditions are presented. Measurements of the thermal emittance scaling with the photocathode laser spot size are analyzed. The significance of the applied rf field in the emittance formation process is discussed. (orig.)

  2. Investigations on the transverse phase space at a photo injector for minimized emittance

    International Nuclear Information System (INIS)

    Miltchev, V.

    2006-08-01

    Radio frequency photoinjectors are electron sources able to generate beams of extremely high brightness, which are applicable to linac driven Free Electron Lasers (FEL). Because of the high phase space density, the dynamics of the electron beam is dominated by space charge interactions between the particles. This thesis studies the transverse phase space of space charge dominated electron beams produced by the Photo Injector Test Facility in Zeuthen (PITZ). The operation conditions for minimizing the transverse emittance are studied experimentally, theoretically and in simulations. The influence of the longitudinal profile of the driving UV laser pulse on the transverse emittance is investigated. Emphasis is placed on the experimental study of the emittance as a function of different machine parameters like the laser beam spot size, the amplitude of the focusing magnetic field, the rf phase and the electron bunch charge. First investigations on the thermal emittance for Cs 2 Te photocathodes under rf operating conditions are presented. Measurements of the thermal emittance scaling with the photocathode laser spot size are analyzed. The significance of the applied rf field in the emittance formation process is discussed. (orig.)

  3. Preservation of low slice emittance in bunch compressors

    Directory of Open Access Journals (Sweden)

    S. Bettoni

    2016-03-01

    Full Text Available Minimizing the dilution of the electron beam emittance is crucial for the performance of accelerators, in particular for free electron laser facilities, where the length of the machine and the efficiency of the lasing process depend on it. Measurements performed at the SwissFEL Injector Test Facility revealed an increase in slice emittance after compressing the bunch even for moderate compression factors. The phenomenon was experimentally studied by characterizing the dependence of the effect on beam and machine parameters relevant for the bunch compression. The reproduction of these measurements in simulation required the use of a 3D beam dynamics model along the bunch compressor that includes coherent synchrotron radiation. Our investigations identified transverse effects, such as coherent synchrotron radiation and transverse space charge as the sources of the observed emittance dilution, excluding other effects, such as chromatic effects on single slices or spurious dispersion. We also present studies, both experimental and simulation based, on the effect of the optics mismatch of the slices on the variation of the slice emittance along the bunch. After a corresponding reoptimization of the beam optics in the test facility we reached slice emittances below 200 nm for the central slices along the longitudinal dimension with a moderate increase up to 300 nm in the head and tail for a compression factor of 7.5 and a bunch charge of 200 pC, equivalent to a final current of 150 A, at about 230 MeV energy.

  4. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  5. Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

    Science.gov (United States)

    An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

    2018-05-01

    Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

  6. Emittance control in linear colliders

    International Nuclear Information System (INIS)

    Ruth, R.D.

    1991-01-01

    Before completing a realistic design of a next-generation linear collider, the authors must first learn the lessons taught by the first generation, the SLC. Given that, they must make designs fault tolerant by including correction and compensation in the basic design. They must also try to eliminate these faults by improved alignment and stability of components. When these two efforts cross, they have a realistic design. The techniques of generation and control of emittance reviewed here provide a foundation for a design which can obtain the necessary luminosity in a next-generation linear collider

  7. Emittance Growth in the NLCTA First Chicane

    International Nuclear Information System (INIS)

    Sun, Yipeng

    2011-01-01

    In this paper, the emittance growth in the NLCTA (Next Linear Collider Test Accelerator) first chicane region is evaluated by simulation studies. It is demonstrated that the higher order fields of the chicane dipole magnet and the dipole corrector magnet (which is attached on the quadrupoles) are the main contributions for the emittance growth, especially for the case with a large initial emittance (γε 0 = 5 (micro)m for instance). These simulation results agree with the experimental observations.

  8. Production of alpha emitters for therapy

    International Nuclear Information System (INIS)

    Vucina, J.; Orlic, M.; Lukic, D.

    2006-01-01

    The basis for the introduction of alpha emitters into nuclear medical practice are their radiobiological properties. High LET values and short ranges in biological tissues are advantageous in comparison with nowadays most often used beta emitters, primarily 90 Y and 131 I. Given are the most important criteria for the introduction of a given radionuclide in the routine use. Shown are the procedures for the production of the most important alpha emitters 211 At, 212 Bi and 213 Bi. (author)

  9. Emittance measurements by variable quadrupole method

    International Nuclear Information System (INIS)

    Toprek, D.

    2005-01-01

    The beam emittance is a measure of both the beam size and beam divergence, we cannot directly measure its value. If the beam size is measured at different locations or under different focusing conditions such that different parts of the phase space ellipse will be probed by the beam size monitor, the beam emittance can be determined. An emittance measurement can be performed by different methods. Here we will consider the varying quadrupole setting method.

  10. Achievement of ultra-low emittance beam in the ATF damping ring

    CERN Document Server

    Honda, Y; Araki, S; Bane, Karl Leopold Freitag; Brachmann, A; Frisch, J; Fukuda, M; Hasegawa, K; Hayano, H; Hendrickson, L; Higashi, Y; Higo, T; Hirano, K; Hirose, T; Iida, K; Imai, T; Inoue, Y; Karataev, P; Kubo, K; Kurihara, Y; Kuriki, M; Kuroda, R; Kuroda, S; Luo, X; Matsuda, M; McCormick, D; Muto, T; Nakajima, K; Nelson, J; Nomura, M; Ohashi, A; Okugi, T; Omori, T; Ross, M; Sakai, H; Sakai, I; Sasao, N; Smith, S; Suzuki, T; Takano, M; Takashi, N; Taniguchi, T; Terunuma, N; Toge, N; Turner, J; Urakawa, J; Vogel, V; Wolski, A; Woodley, M; Yamazaki, I; Yamazaki, Y; Yocky, J; Young, A; Zimmermann, Frank

    2003-01-01

    We report on the smallest vertical emittance achieved in single-bunch-mode operation of the ATF. The emittances were measured with a laser-wire beam-profile monitor installed in the damping ring. The bunch length and the momentum spread of the beam were also recorded under the same conditions. The smallest vertical rms emittance measured is 4 pm in the limit of zero current. It increases by a factor of 1.5 for a bunch intensity of 10^10 electrons. There are no discrepancies between the measured data and the calculations of intra-beam scattering.

  11. The Brookhaven ATF low-emittance beam line

    International Nuclear Information System (INIS)

    Wang, X.J.; Kirk, H.G.

    1991-01-01

    One component of the experimental program at the Brookhaven Accelerator Test Facility (ATF) consists of a class of experiments which will study the acceleration of electrons through micron-size structures which are exposed in coincidence to a 100 GW CO 2 laser beam. These experiments require the development and control of an electron beam with geometric emittances on the order of 10 -10 m-rad and intensities on the order of 10 6 electrons. In this paper, the authors describe the strategies for producing such beams and the effects of higher-order aberrations. Particle tracking results are presented for the final-focus system

  12. The Brookhaven ATF low-emittance beam line

    International Nuclear Information System (INIS)

    Wang, X.J.

    1991-01-01

    One component of the experimental program at the Brookhaven Accelerator Test Facility (ATF) consists of a class of experiments which will study the acceleration of electrons through micron-size structures which are exposed in coincidence to a 100 GW CO 2 laser beam. These experiments require the development and control of an electron beam with geometric emittances on the order of 10 -10 m-rad and intensities on the order of 10 6 electrons. In this paper, we describe the strategies for producing such beams and the effects of high-order aberrations. Particle tracking results are presented for the final-focus system. 9 refs., 6 figs., 2 tabs

  13. Neutron detector with own power supply, with an emitter made of gadolinium foil and two concentric collectors

    International Nuclear Information System (INIS)

    Brixy, H.; Spillekothen, H.G.; Benninghofen, G.; Serafin, N.

    1985-01-01

    The emitter consists of a material with a high absorption crossection for thermal neutrons, particularly gadolinium, and is provided with an auxiliary emitter layer on the inside and/or the outside. This increases the electron yield with suitable dimensions and material. (orig./HP) [de

  14. Minimum emittance in TBA and MBA lattices

    Science.gov (United States)

    Xu, Gang; Peng, Yue-Mei

    2015-03-01

    For reaching a small emittance in a modern light source, triple bend achromats (TBA), theoretical minimum emittance (TME) and even multiple bend achromats (MBA) have been considered. This paper derived the necessary condition for achieving minimum emittance in TBA and MBA theoretically, where the bending angle of inner dipoles has a factor of 31/3 bigger than that of the outer dipoles. Here, we also calculated the conditions attaining the minimum emittance of TBA related to phase advance in some special cases with a pure mathematics method. These results may give some directions on lattice design.

  15. Minimum emittance in TBA and MBA lattices

    International Nuclear Information System (INIS)

    Xu Gang; Peng Yuemei

    2015-01-01

    For reaching a small emittance in a modern light source, triple bend achromats (TBA), theoretical minimum emittance (TME) and even multiple bend achromats (MBA) have been considered. This paper derived the necessary condition for achieving minimum emittance in TBA and MBA theoretically, where the bending angle of inner dipoles has a factor of 3 1/3 bigger than that of the outer dipoles. Here, we also calculated the conditions attaining the minimum emittance of TBA related to phase advance in some special cases with a pure mathematics method. These results may give some directions on lattice design. (authors)

  16. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  17. Effects of quantum coupling on the performance of metal-oxide ...

    Indian Academy of Sciences (India)

    LING-FENG MAO. School of Electronics & Information Engineering, Soochow University, ... Quantum coupling; metal-oxide-semiconductor field transistors. ... effects of the barrier height reduction caused by the channel electron velocity due to.

  18. Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    International Nuclear Information System (INIS)

    Baruah, Sunandan; Dutta, Joydeep; Sinha, Sudarson Sekhar; Ghosh, Barnali; Pal, Samir Kumar; Raychaudhuri, A. K.

    2009-01-01

    Wide band gap metal oxide semiconductors such as zinc oxide (ZnO) show visible band photolysis that has been employed, among others, to degrade harmful organic contaminants into harmless mineral acids. Metal oxides show enhanced photocatalytic activity with the increase in electronic defects in the crystallites. By introducing defects into the crystal lattice of ZnO nanoparticles, we observe a redshift in the optical absorption shifting from the ultraviolet region to the visible region (400-700 nm), which is due to the creation of intermediate defect states that inhibit the electron hole recombination process. The defects were introduced by fast nucleation and growth of the nanoparticles by rapid heating using microwave irradiation and subsequent quenching during the precipitation reaction. To elucidate the nature of the photodegradation process, picosecond resolved time correlated single photon count (TCSPC) spectroscopy was carried out to record the electronic transitions resulting from the de-excitation of the electrons to their stable states. Photodegradation and TCSPC studies showed that defect engineered ZnO nanoparticles obtained through fast crystallization during growth lead to a faster initial degradation rate of methylene blue as compared to the conventionally synthesized nanoparticles

  19. Room-temperature deposition of diamond-like carbon field emitter on flexible substrates

    International Nuclear Information System (INIS)

    Chen, H.; Iliev, M.N.; Liu, J.R.; Ma, K.B.; Chu, W.-K.; Badi, N.; Bensaoula, A.; Svedberg, E.B.

    2006-01-01

    Room-temperature fabrication of diamond-like carbon electron field emitters on flexible polyimide substrate is reported. These thin film field emitters are made using an Ar gas cluster ion beam assisted C 6 vapor deposition method. The bond structure of the as-deposited diamond-like carbon film was studied using Raman spectroscopy. The field emission characteristics of the deposited films were also measured. Electron current densities over 15 mA/cm 2 have been recorded under an electrical field of about 65 V/μm. These diamond-like carbon field emitters are easy and inexpensive to fabricate. The results are promising for flexible field-emission fabrication without the need of complex patterning and tip shaping as compared to the Spindt-type field emitters

  20. Normal spectral emittance of Inconel 718 aeronautical alloy coated with yttria stabilized zirconia films

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Fernandez, L. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Industria de Turbo Propulsores, S.A., Planta de Zamudio, Edificio 300, 48170 Zamudio, Bizkaia (Spain); Campo, L. del [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Perez-Saez, R.B., E-mail: raul.perez@ehu.es [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Tello, M.J. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Emittance of Inconel 718 coated with plasma sprayed yttria stabilized zirconia. Black-Right-Pointing-Pointer The coating is opaque for {lambda} > 9 {mu}m and semi-transparent for {lambda} < 9 {mu}m. Black-Right-Pointing-Pointer In the semi-transparent region the emittance decreases with coating thickness. Black-Right-Pointing-Pointer 300 {mu}m thick coatings are still semi-transparent. Black-Right-Pointing-Pointer In the opaque region the surface roughness determines the emittance level. - Abstract: Knowledge of the radiative behaviour of the yttria stabilized zirconia (YSZ) thermal barrier coatings (TBCs) is needed to perform radiative heat transfer calculations in industrial applications. In this paper, normal spectral emittance experimental data of atmospheric plasma sprayed (PS) YSZ films layered on Inconel 718 substrates are shown. The spectral emittance was measured between 2.5 and 22 {mu}m on samples with film thicknesses ranging from 20 to 280 {mu}m. The samples were heated in a controlled environment, and the emittance was measured for several temperatures between 330 and 730 Degree-Sign C. The dependence of the spectral emittance with film thickness, surface roughness and temperature has been studied and compared with the available results for YSZ TBCs obtained by electron-beam physical vapour deposition. The PS-TBC samples show a Christiansen point at {lambda} = 12.8 {mu}m. The films are semi-transparent for {lambda} < 9 {mu}m, and opaque for {lambda} > 9 {mu}m. In the semi-transparent region, the contribution of the radiation emitted by the Inconel 718 substrate to the global emittance of the samples is analysed. In addition, the influence of the roughness in the emittance values in the opaque spectral region is discussed. Finally, the total normal emittance is obtained as a function of the TBC thickness.