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Sample records for metal-insulator transition temperature

  1. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  2. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  3. Quantum Critical “Opalescence” around Metal-Insulator Transitions

    Science.gov (United States)

    Misawa, Takahiro; Yamaji, Youhei; Imada, Masatoshi

    2006-08-01

    Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transition emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical temperatures can be lowered to zero, which offers a challenging quantum phase transition. We present a microscopic description of such quantum critical phenomena in two dimensions. The conventional scheme of phase transitions by Ginzburg, Landau, and Wilson is violated because of its topological nature. It offers a clear insight into the criticalities of metal-insulator transitions (MIT) associated with Mott or charge-order transitions. Fermi degeneracy involving the diverging density fluctuations generates emergent phenomena near the endpoint of the first-order MIT and must shed new light on remarkable phenomena found in correlated metals such as unconventional cuprate superconductors. It indeed accounts for the otherwise puzzling criticality of the Mott transition recently discovered in an organic conductor. We propose to accurately measure enhanced dielectric fluctuations at small wave numbers.

  4. Unusual metal-insulator transition in disordered ferromagnetic films

    International Nuclear Information System (INIS)

    Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

    2012-01-01

    We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

  5. Harnessing the metal-insulator transition for tunable metamaterials

    Science.gov (United States)

    Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2017-08-01

    The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

  6. Metal-insulator transition in vanadium dioxide

    International Nuclear Information System (INIS)

    Zylbersztejn, A.; Mott, N.F.

    1975-01-01

    The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

  7. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  8. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  9. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  10. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  11. Probable metal-insulator transition in Ag{sub 4}SSe

    Energy Technology Data Exchange (ETDEWEB)

    Drebushchak, V.A., E-mail: dva@igm.nsc.ru [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Pal’yanova, G.A.; Seryotkin, Yu.V. [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Drebushchak, T.N. [Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Institute of Solid State Chemistry and Mechanochemistry, SB RAS, Ul. Kutateladze 18, Novosibirsk 630128 (Russian Federation)

    2015-02-15

    Highlights: • New phase transition in Ag{sub 4}SSe was discovered with scanning calorimetry and supported with X-ray powder diffraction. • The thermal effect relates to the anomaly in electrical and thermal conductivity of Ag{sub 4}SSe. • Similar thermal and electrical effects in K{sub 3}Cu{sub 8}S{sub 6} are explained with the metal-insulator transition. - Abstract: New phase transition (285 K) in low-temperature monoclinic Ag{sub 4}SSe was found out below the α-β transition (358 K) after the measurements with differential scanning calorimetry. The transition reveals significant hysteresis (over 30 K). X-ray powder diffraction shows that the superlattice with doubled a and b parameters of the unit cell exists below the new transition point. The signs of this new phase transition can be found in thermal and electrical conductivity of Ag{sub 4}SSe published in literature. Elusive phase transition in Ag{sub 2}Se shows similar properties. The new transition is likely related to the metal-insulator type transition, like K{sub 3}Cu{sub 8}S{sub 6}.

  12. Charge disproportionation in RNiO3 at the metal-insulator transition

    International Nuclear Information System (INIS)

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Garcia-Munoz, J.L.; Fernandez-Diaz, M.T.; Aranda, M.A.G.

    1999-01-01

    Complete text of publication follows. Neutron and synchrotron diffraction data provide the first observation of changes in the crystal symmetry at the metal-insulator (MI) transition in RNiO 3 perovskites [1]. At high temperatures, YNiO 3 is orthorhombic and metallic but below T MI = 582 K it changes to a monoclinic insulator. The monoclinic symmetry is due to a partial 2 Ni 3+ → Ni 3+δ + Ni 3-δ charge disproportionation associated to the MI transition. In the insulating state the presence of two NiO 6 octahedra is reported with, respectively, expanded (Ni1) and contracted (Ni2) Ni-O bonds, that alternated along the three directions of the crystal. Corroborating the charge disproportion, unequal moments are found at Ni1 and Ni2 octahedra in the low temperature monoclinic phase. (author) J.A. Alonso et al, Phys. Rev. Lett. in press

  13. Reentrant Metal-Insulator Transitions in Silicon -

    Science.gov (United States)

    Campbell, John William M.

    This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

  14. Structurally triggered metal-insulator transition in rare-earth nickelates.

    Science.gov (United States)

    Mercy, Alain; Bieder, Jordan; Íñiguez, Jorge; Ghosez, Philippe

    2017-11-22

    Rare-earth nickelates form an intriguing series of correlated perovskite oxides. Apart from LaNiO 3 , they exhibit on cooling a sharp metal-insulator electronic phase transition, a concurrent structural phase transition, and a magnetic phase transition toward an unusual antiferromagnetic spin order. Appealing for various applications, full exploitation of these compounds is still hampered by the lack of global understanding of the interplay between their electronic, structural, and magnetic properties. Here we show from first-principles calculations that the metal-insulator transition of nickelates arises from the softening of an oxygen-breathing distortion, structurally triggered by oxygen-octahedra rotation motions. The origin of such a rare triggered mechanism is traced back in their electronic and magnetic properties, providing a united picture. We further develop a Landau model accounting for the metal-insulator transition evolution in terms of the rare-earth cations and rationalizing how to tune this transition by acting on oxygen rotation motions.

  15. Quantum criticality around metal-insulator transitions of strongly correlated electron systems

    Science.gov (United States)

    Misawa, Takahiro; Imada, Masatoshi

    2007-03-01

    Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

  16. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    Directory of Open Access Journals (Sweden)

    P. A. Bhobe

    2015-10-01

    Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

  17. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  18. Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Kurdestany, Jamshid Moradi; Satpathy, S.

    2017-08-01

    Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

  19. Metal-insulator transition induced in CaVO3 thin films

    International Nuclear Information System (INIS)

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-01-01

    Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

  20. Role of temperature-dependent O-p-Fe-d hybridization parameter in the metal-insulator transition of Fe3O4: a theoretical study

    Science.gov (United States)

    Fauzi, A. D.; Majidi, M. A.; Rusydi, A.

    2017-04-01

    We propose a simple tight-binding based model for Fe3O4 that captures the preference of ferrimagnetic over ferromagnetic spin configuration of the system. Our model is consistent with previous theoretical and experimental studies suggesting that the system is half metallic, in which spin polarized electrons hop only among the Fe B sites. To address the metal-insulator transition (MIT) we propose that the strong correlation among electrons, which may also be influenced by the electron-phonon interactions, manifest as the temperature-dependence of the O-p-Fe-d hybridization parameter, particularly Fe-d belonging to one of the Fe B sites (denoted as {t}{{FeB}-{{O}}}(2)). By proposing that this parameter increases as the temperature decreases, our density-of-states calculation successfully captures a gap opening at the Fermi level, transforming the system from half metal to insulator. Within this model along with the corresponding choice of parameters and a certain profile of the temperature dependence of {t}{{FeB}-{{O}}}(2), we calculate the resistivity of the system as a function of temperature. Our calculation result reveals the drastic uprising trend of the resistivity profile as the temperature decreases, with the MIT transition temperature located around 100 K, which is in agreement with experimental data.

  1. First-order metal-insulator transitions in the extended Hubbard model due to self-consistent screening of the effective interaction

    Science.gov (United States)

    Schüler, M.; van Loon, E. G. C. P.; Katsnelson, M. I.; Wehling, T. O.

    2018-04-01

    While the Hubbard model is the standard model to study Mott metal-insulator transitions, it is still unclear to what extent it can describe metal-insulator transitions in real solids, where nonlocal Coulomb interactions are always present. By using a variational principle, we clarify this issue for short- and long-range nonlocal Coulomb interactions for half-filled systems on bipartite lattices. We find that repulsive nonlocal interactions generally stabilize the Fermi-liquid regime. The metal-insulator phase boundary is shifted to larger interaction strengths to leading order linearly with nonlocal interactions. Importantly, nonlocal interactions can raise the order of the metal-insulator transition. We present a detailed analysis of how the dimension and geometry of the lattice as well as the temperature determine the critical nonlocal interaction leading to a first-order transition: for systems in more than two dimensions with nonzero density of states at the Fermi energy the critical nonlocal interaction is arbitrarily small; otherwise, it is finite.

  2. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  3. Holographic metal-insulator transition in higher derivative gravity

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Yi, E-mail: lingy@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Liu, Peng, E-mail: liup51@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wu, Jian-Pin, E-mail: jianpinwu@mail.bnu.edu.cn [Institute of Gravitation and Cosmology, Department of Physics, School of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Zhou, Zhenhua, E-mail: zhouzh@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-03-10

    We introduce a Weyl term into the Einstein–Maxwell-Axion theory in four dimensional spacetime. Up to the first order of the Weyl coupling parameter γ, we construct charged black brane solutions without translational invariance in a perturbative manner. Among all the holographic frameworks involving higher derivative gravity, we are the first to obtain metal-insulator transitions (MIT) when varying the system parameters at zero temperature. Furthermore, we study the holographic entanglement entropy (HEE) of strip geometry in this model and find that the second order derivative of HEE with respect to the axion parameter exhibits maximization behavior near quantum critical points (QCPs) of MIT. It testifies the conjecture in that HEE itself or its derivatives can be used to diagnose quantum phase transition (QPT).

  4. On metal-insulator transition in cubic fullerides

    Science.gov (United States)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  5. Two-order parameters theory of the metal-insulator phase transition kinetics in the magnetic field

    Science.gov (United States)

    Dubovskii, L. B.

    2018-05-01

    The metal-insulator phase transition is considered within the framework of the Ginzburg-Landau approach for the phase transition described with two coupled order parameters. One of the order parameters is the mass density which variation is responsible for the origin of nonzero overlapping of the two different electron bands and the appearance of free electron carriers. This transition is assumed to be a first-order phase one. The free electron carriers are described with the vector-function representing the second-order parameter responsible for the continuous phase transition. This order parameter determines mostly the physical properties of the metal-insulator transition and leads to a singularity of the surface tension at the metal-insulator interface. The magnetic field is involved into the consideration of the system. The magnetic field leads to new singularities of the surface tension at the metal-insulator interface and results in a drastic variation of the phase transition kinetics. A strong singularity in the surface tension results from the Landau diamagnetism and determines anomalous features of the metal-insulator transition kinetics.

  6. Metal-insulator transition induced in CaVO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  7. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  8. First principles description of the insulator-metal transition in europium monoxide

    KAUST Repository

    Wang, Hao

    2012-02-01

    Europium monoxide, EuO, is a ferromagnetic insulator. Its electronic structure under pressure and doping is investigated by means of density functional theory. We employ spin polarized electronic structure calculations including onsite electron-electron interaction for the localized Eu 4f and 5d electrons. Our results show that under pressure the ferromagnetism is stable, both for hydrostatic and uniaxial pressure, while the compound undergoes an insulator-metal transition. The insulator-metal transition in O deficient and Gd doped EuO is reproduced for an impurity concentration of 6.25%. A 10 monolayer thick EuO(1 0 0) thin film is predicted to be an insulator with a narrow band gap of 0.08 eV. © 2011 Elsevier B.V. All rights reserved.

  9. Metal-insulator transition in n-InSb under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Schaller, U.; Kraak, W.; Herrmann, R.

    1984-01-01

    The effect of applying hydrostatic compression (up to 12 kbar) to the galvanomagnetic properties of pure n-InSb crystals is investigated in order to get information about the influence of hydrostatic pressure on the localization of carriers and about the metal-insulator transition. Electrical resistivity and Hall coefficient are measured as a function of pressure for various excess donor concentrations as well as a function of temperature for various pressures

  10. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Directory of Open Access Journals (Sweden)

    Yuichi Otsuka

    2016-03-01

    Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  11. Numerical simulations of quantum many-body systems with applications to superfluid-insulator and metal-insulator transitions

    International Nuclear Information System (INIS)

    Niyaz, P.

    1993-01-01

    Quantum Monte Carlo techniques were used to study two quantum many-body systems, the one-dimensional extended boson-Hubbard Hamiltonian, a model of superfluid-insulator quantum phase transitions, and the two-dimensional Holstein Model, a model for electron-phonon interactions. For the extended boson-Hubbard model, the authors studied the ground state properties at commensurate filling (density = 1) and half-integer filling (density = 1/2). At commensurate filling, the system has two possible insulating phases for strong coupling. If the on-site repulsion dominates, the system freezes into an insulating phase where each site is singly occupied. If the intersite repulsion dominates, doubly occupied and empty sites alternate. At weak coupling, the system becomes a superfluid. The authors investigated the order of phase transitions between these different phases. At half-integer filling, the authors found one strong coupling insulating phase, where singly occupied and empty sites alternate, and a weak coupling superfluid phase. The authors also investigated the possibility of a supersolid phase and found no clear evidence of such a new phase. For the electron-phonon (Holstein) model, the authors focused on the finite temperature phase transition from a metallic state to an insulating charge density wave (CDW) state as the temperature is lowered. The authors present the first calculation of the spectral density from Monte Carlo data for this system. The authors also investigated the formation of a CDW state as a function of various parameters characterizing the electron-phonon interactions. Using these numerical results as benchmarks, the authors then investigated different levels of Migdal approximations. The authors found the solutions of a set of gapped Migdal-Eliashberg equations agreed qualitatively with the Monte Carlo results

  12. Pressure-induced metal-insulator transition in spinel compound CuV2S4

    International Nuclear Information System (INIS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-01-01

    In order to investigate the pressure effect on electrical properties of CuV 2 S 4 , we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2 S 4 at 8 GPa

  13. Excitonic metal-insulator phase transition of the Mott type in compressed calcium

    Science.gov (United States)

    Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

    2017-05-01

    It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

  14. Pressure-driven insulator-metal transition in cubic phase UO2

    Science.gov (United States)

    Huang, Li; Wang, Yilin; Werner, Philipp

    2017-09-01

    Understanding the electronic properties of actinide oxides under pressure poses a great challenge for experimental and theoretical studies. Here, we investigate the electronic structure of cubic phase uranium dioxide at different volumes using a combination of density functional theory and dynamical mean-field theory. The ab initio calculations predict an orbital-selective insulator-metal transition at a moderate pressure of ∼45 GPa. At this pressure the uranium's 5f 5/2 state becomes metallic, while the 5f 7/2 state remains insulating up to about 60 GPa. In the metallic state, we observe a rapid decrease of the 5f occupation and total angular momentum with pressure. Simultaneously, the so-called “Zhang-Rice state”, which is of predominantly 5f 5/2 character, quickly disappears after the transition into the metallic phase.

  15. Metal-insulator transition in 2D: the role of interactions and disorder

    International Nuclear Information System (INIS)

    Kastrinakis, George

    2007-01-01

    We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin scattering (coming from the interfaces of the heterostructures in question). In a diagramatic approach, we predict the existence of a characteristic temperature T 0 =T 0 (n,ω H ), n being the density of carriers, and ω H the Zeeman energy, below which these systems become metallic, due to the onset of strong spin-density correlations. This is in very good agreement with experiments, and corroborates the fact that varying n and ω H are equivalent ways into/out of the metallic regime. The conductivity, calculated as a function of temperature and ω H in the metallic state, compares favorably to experiment. Moreover, we give an explicit expression for the conventional weak disorder contributions to the conductivity in the frame of our model. We comment on the nature of the transition, we calculate the specific heat of the system and we discuss the fate of the metallic state in the limit of zero temperature

  16. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  17. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  18. Metal-Insulator Phase Transition in thin VO2 films: A Look from the Far Infrared Side

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, B. M.; Thoman, A.

    Vanadium dioxide (VO2) displays a well-known metal-insulator (MI) transition at atemperature of 68oC. The MI transition in VO2 has been studied extensively by a widerange of optical, electrical, structural, and magnetic measurements. In spite of this there isstill some controversy about the nature...... temperature hysteresis of the far-infrared transmission through thethin film with temperature. Interestingly the temperature-dependent transmissionamplitude shows a markedly different switching temperature than the transmission phase.This effect has not been observed before, and is very important...

  19. Local distortion induced metal-to-insulator phase transition in PrRu4P12

    International Nuclear Information System (INIS)

    Cao, D.; Heffner, R.H.; Jeong, I.-K.; Bauer, E.D.; Bridges, F.; Yuhasz, W.M.; Maple, M.B.

    2005-01-01

    Extended x-ray absorption fine structure (EXAFS) experiments have been carried out on PrRu 4 P 12 and PrOs 4 P 12 to study the metal-to-insulator (MI) phase transition in PrRu 4 P 12 . No Pr displacement was observed across the MI transition temperature from the EXAFS data. Instead, our EXAFS data clearly show that a Ru displacement is associated with this MI transition. The very high Debye temperature for the Ru-P bond (Θ D =690 K) suggests that a slight rotation/displacement of relatively rigid RuP 6 octahedra leads to this small Ru displacement, which accompanies the MI transition at 62 K in PrRu 4 P 12

  20. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  1. Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

    Science.gov (United States)

    Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

    2013-05-28

    This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

  2. Phase-field model of insulator-to-metal transition in VO2 under an electric field

    Science.gov (United States)

    Shi, Yin; Chen, Long-Qing

    2018-05-01

    The roles of an electric field and electronic doping in insulator-to-metal transitions are still not well understood. Here we formulated a phase-field model of insulator-to-metal transitions by taking into account both structural and electronic instabilities as well as free electrons and holes in VO2, a strongly correlated transition-metal oxide. Our phase-field simulations demonstrate that in a VO2 slab under a uniform electric field, an abrupt universal resistive transition occurs inside the supercooling region, in sharp contrast to the conventional Landau-Zener smooth electric breakdown. We also show that hole doping may decouple the structural and electronic phase transitions in VO2, leading to a metastable metallic monoclinic phase which could be stabilized through a geometrical confinement and the size effect. This work provides a general mesoscale thermodynamic framework for understanding the influences of electric field, electronic doping, and stress and strain on insulator-to-metal transitions and the corresponding mesoscale domain structure evolution in VO2 and related strongly correlated systems.

  3. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.

    Science.gov (United States)

    Taha, Mohammad; Walia, Sumeet; Ahmed, Taimur; Headland, Daniel; Withayachumnankul, Withawat; Sriram, Sharath; Bhaskaran, Madhu

    2017-12-20

    Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.

  4. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

    Science.gov (United States)

    Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

    2009-11-01

    Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

  5. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  6. Magnetoconductance of amorphous Yx-Si1-x alloys near the metal-insulator transition

    International Nuclear Information System (INIS)

    Sanquer, M.; Tourbot, R.; Boucher, B.

    1989-01-01

    We have performed magnetoresistance experiments across the Metal-Insulator transition in amorphous Y x -Si 1-x alloys using very high fields (H = 40T) and very low temperatures (T = 0.05K). Different and unusual behaviours are observed and can be explained assuming that the electron-electron interaction contribution dominates at low fields and localization corrections appears at very high fields. This is the opposite situation compared to usual weak localization regime

  7. Practical Improvements to the Lee-More Conductivity Near the Metal-Insulator Transition

    International Nuclear Information System (INIS)

    Desjarlais, Michael P.

    2000-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere

  8. Practical improvements to the Lee-More conductivity near the metal-insulator transition

    International Nuclear Information System (INIS)

    Desjarlais, M.P.

    2001-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere. (orig.)

  9. Metal-insulator transitions in IZO, IGZO, and ITZO films

    Energy Technology Data Exchange (ETDEWEB)

    Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  10. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  11. Metal–insulator transition in Ni-doped Na0.75CoO2: Insights from ...

    Indian Academy of Sciences (India)

    resistivity on lowering the temperature, with the metal-to-insulator transition temperature. (TMIT) increasing with the Ni ... The Ni-doped sample is seen to change over from a metallic to insulating behaviour at ~175 K. The ..... neutron diffraction to look for structural changes, viz., changes in bond lengths and site occupancies ...

  12. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M.; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-01

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV–vis spectroscopy and AFM measurements show that this functionality stems from the films’ ability to structurally tune their HOMO–LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures’ plausibility for on-chip molecular electronics operative at room temperature.

  13. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics.

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-06

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO 2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.

  14. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    Science.gov (United States)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  15. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-01

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase

  16. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  17. On holographic disorder-driven metal-insulator transitions

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2017-01-10

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  18. On holographic disorder-driven metal-insulator transitions

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2017-01-01

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  19. Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation

    Science.gov (United States)

    Nie, X. C.; Song, Hai-Ying; Zhang, Xiu; Gu, Peng; Liu, Shi-Bing; Li, Fan; Meng, Jian-Qiao; Duan, Yu-Xia; Liu, H. Y.

    2018-03-01

    We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved reflectivity. In photoexcited non-equilibrium states, we found a sign reverse in reflectivity change ΔR/R, from positive around room temperature to negative at cryogenic temperatures. The former corresponds to a free carrier metallic state, while the latter is attributed to an exciton insulating state, in which the transient electronic properties is mostly dominated by excitons, resulting in a transient metal–insulator transition (MIT). Two transition temperatures (T 1 and T 2) are well identified by analyzing the intensity change of the transient reflectivity. We found that photoexcited MIT starts emerging at T 1 as high as ∼ 230 K, in terms of a dip feature at 0.4 ps, and becomes stabilized below T 2 that is up to ∼ 180 K, associated with a negative constant after 40 ps. Our results address a phase diagram that provides a framework for the inducing of MIT through temperature and photoexcitation, and may shed light on the understanding of light-semiconductor interaction and exciton physics.

  20. Reflectance study on the metal-insulator transition driven by crystallinity change in poly(3,4-ethylenedioxy thiophene)/poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Cho, Shinuk; Park, Sungheum; Lee, Kwanghee

    2005-01-01

    We report optical reflectance, R(ω), studies on free-standing films of poly(3,4-ethylene dioxy thiophene)/poly(style ne sulfonate) (PEDOT-PSS) measured over a range from 0.02 - 5.0 eV. When the PEDOT-PSS films were prepared at an elevated temperature of 60 .deg. C, the films exhibit an increased dc-conductivity (σ dc ∼ 104 S/cm) and an optical conductivity, σ(ω), in the intraband transitions below 1.0 eV as compared with the films prepared at room temperature (σ dc ∼ 47 S/cm). Detailed analysis of σ(ω) in terms of the 'localization-modified Drude (LMD) model' demonstrated that the heat-treated PEDOT-PSS was a disordered metal near the metal-insulator transition (MIT) while the as-grown films could be better described as a Fermi glass on the insulating side of MIT. The heat-annealing process increased the degree of crystallinity of the films, thereby inducing a MIT near the critical limit.

  1. Ca-site substitution induced a metal-insulator transition in manganite CaMnO3

    International Nuclear Information System (INIS)

    Sousa, D.; Nunes, M.R.; Silveira, C.; Matos, I.; Lopes, A.B.; Melo Jorge, M.E.

    2008-01-01

    A systematic study of the A-site doping in Mn(IV)-rich perovskite manganites Ca 1-x Ho x MnO 3 , over a large homogeneity range (0.1 ≤ x ≤ 0.4), has been performed. A significant increase in the lattice parameters indicated the presence of mixed valence state of Mn: Mn 3+ and Mn 4+ . The substitution of calcium by holmium also induces strong changes in the electrical properties. We found that small Ho concentration produces an important decrease in the electrical resistivity and induces an electrical transition, the temperature corresponding to the metal-insulator transition (T MI ) shifts with the holmium content. This electrical behavior is attributed to the Mn 3+ ions content and a charge order effect

  2. Metal-insulator transition and Frohlich conductivity in the Su-Schrieffer-Heeger model

    NARCIS (Netherlands)

    Michielsen, K.F L; de Raedt, H.A.

    1996-01-01

    A quantum molecular dynamics technique is used to study the single-particle density of states, Drude weight, optical conductivity and flux quantization in the Su-Schrieffer-Heeger (SSH) model. Our simulation data show that the SSH model has a metal-insulator transition away from half-filling. In the

  3. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  4. First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

    Science.gov (United States)

    Marcelino, Edgar

    2017-05-01

    This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

  5. c -Axis Dimer and Its Electronic Breakup: The Insulator-to-Metal Transition in Ti2 O3

    Science.gov (United States)

    Chang, C. F.; Koethe, T. C.; Hu, Z.; Weinen, J.; Agrestini, S.; Zhao, L.; Gegner, J.; Ott, H.; Panaccione, G.; Wu, Hua; Haverkort, M. W.; Roth, H.; Komarek, A. C.; Offi, F.; Monaco, G.; Liao, Y.-F.; Tsuei, K.-D.; Lin, H.-J.; Chen, C. T.; Tanaka, A.; Tjeng, L. H.

    2018-04-01

    We report on our investigation of the electronic structure of Ti2 O3 using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra, we have been able to establish unambiguously that the Ti-Ti c -axis dimer in the corundum crystal structure is electronically present and forms an a1 ga1 g molecular singlet in the low-temperature insulating phase. Upon heating, we observe a considerable spectral weight transfer to lower energies with orbital reconstruction. The insulator-metal transition may be viewed as a transition from a solid of isolated Ti-Ti molecules into a solid of electronically partially broken dimers, where the Ti ions acquire additional hopping in the a -b plane via the egπ channel, the opening of which requires consideration of the multiplet structure of the on-site Coulomb interaction.

  6. The control of magnetism near metal-to-insulator transitions of VO2 nano-belts

    CSIR Research Space (South Africa)

    Nkosi, SS

    2016-12-01

    Full Text Available The magnetic properties of paramagnetic/weakly ferromagnetic films are strongly affected by the proximity to materials that undergo a metal to insulator phase transition. Here, we show that under the deposition conditions associated with structural...

  7. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  8. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  9. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  10. Substitution effect on metal-insulator transition of K2V8O16

    International Nuclear Information System (INIS)

    Isobe, Masahiko; Koishi, Shigenori; Yamazaki, Satoshi; Yamaura, Jun-ichi; Gotou, Hirotada; Yagi, Takehiko; Ueda, Yutaka

    2009-01-01

    The effect of the substitution of various ions on the metal-insulator (MI) transition at 170 K in K 2 V 8 O 16 has been investigated. Both Rb and Ti form complete solid solution systems: K 2-x Rb x V 8 O 16 and K 2 V 8-y Ti y O 16 , respectively. The substitution of Rb for K or of Ti for V splits the transition into two transitions: the high-temperature transition is a first-order MI transition from a tetragonal structure to a tetragonal structure, and the low-temperature transition is a second-order transition to a monoclinic structure. In K 2-x Rb x V 8 O 16 , the former terminates to an MI transition at around 220 K in Rb 2 V 8 O 16 , while the latter disappears at x > 0.6. In K 2 V 8-y Ti y O 16 , both transitions disappear at y > 0.5. The substitution of Cr for V also results in a similar splitting of the transition and the rapid disappearance of both transitions. The substitution of Na or Ba for K suppresses the MI transition without any splitting of the transition, although the solubility of both ions is limited. These substitution effects reveal that the MI transition of K 2 V 8 O 16 consists of two parts: a first-order MI transition and a parasitic second-order structural transition; the substitution of some ions causes a clear splitting of these transitions, probably due to the difference between the chemical pressure effects on the two transitions. The first-order MI transition is very sensitive to charge randomness, suggesting the charge ordering nature of the MI transition, while the second-order structural transition is very sensitive to both charge and structural randomnesses. (author)

  11. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    International Nuclear Information System (INIS)

    Pinto, R.A.; Rodriguez, M.; Gonzalez, J.A.; Medina, E.

    2005-01-01

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging

  12. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, R.A. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)]. E-mail: ripinto@ivic.ve; Rodriguez, M. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Gonzalez, J.A. [Laboratorio de Fisica Computacional, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Medina, E. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)

    2005-06-20

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging.

  13. Ginsburg-Landau equation around the superconductor-insulator transition

    International Nuclear Information System (INIS)

    Ng, T.K.

    1991-01-01

    Based on the scaling theory of localization, we construct a Ginsburg-Landau (GL) equation for superconductors in an arbitrary strength of disordered potential. Using this GL equation, we reexamine the criteria for the superconductor-insulator transition and find that the transition to a localized superconductor can happen on both sides of the (normal) metal-insulator transition, in contrast to a previous prediction by Ma and Lee [Phys. Rev. B 32, 5658 (1985)] that the transition can only be on the insulator side. Furthermore, by comparing our theory with a recent scaling theory of dirty bosons by Fisher et al. [Phys. Rev. Lett. 64, 587 (1990)], we conclude that nontrivial crossover behavior in transport properties may occur in the vicinity of the superconductor-insulator transition

  14. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (011)-oriented vanadium dioxide films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    Yu Qian; Li Wenwu; Duan Zhihua; Hu Zhigao; Chu Junhao; Liang Jiran; Chen Hongda; Liu Jian

    2013-01-01

    The metal-insulator transition behaviour of vanadium dioxide (VO 2 ) films grown at different oxygen pressures is investigated. With the aid of temperature-dependent electrical and infrared transmittance experiments, it is found that the transition temperature in the heating process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process shows an inverse variation trend. It is found that the hysteresis width of the phase transition is narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower the energy requirement of transformation. Furthermore, the defects reduce the forbidden gap of the VO 2 system due to the generation of a V 5+ ion. The present results are valuable for the achievement of VO 2 -based optoelectronic devices.

  15. Superlattice formation lifting degeneracy protected by nonsymmorphic symmetry through a metal-insulator transition in RuAs

    Science.gov (United States)

    Kotegawa, Hisashi; Takeda, Keiki; Kuwata, Yoshiki; Hayashi, Junichi; Tou, Hideki; Sugawara, Hitoshi; Sakurai, Takahiro; Ohta, Hitoshi; Harima, Hisatomo

    2018-05-01

    A single crystal of RuAs obtained with the Bi-flux method shows obvious successive metal-insulator transitions at TMI 1˜255 K and TMI 2˜195 K. The x-ray diffraction measurement reveals the formation of a superlattice of 3 ×3 ×3 of the original unit cell below TMI 2, accompanied by a change of the crystal system from the orthorhombic structure to the monoclinic one. Simple dimerization of the Ru ions is not seen in the ground state. The multiple As sites observed in the nuclear quadrupole resonance spectrum also demonstrate the formation of the superlattice in the ground state, which is clarified to be nonmagnetic. The divergence in 1 /T1 at TMI 1 shows that a symmetry lowering by the metal-insulator transition is accompanied by strong critical fluctuations of some degrees of freedom. Using the structural parameters in the insulating state, the first-principles calculation reproduces successfully the reasonable size of nuclear quadrupole frequencies νQ for the multiple As sites, ensuring the high validity of the structural parameters. The calculation also gives a remarkable suppression in the density of states near the Fermi level, although the gap opening is insufficient. A coupled modulation of the calculated Ru d -electron numbers and the crystal structure proposes the formation of a charge density wave in RuAs. Some lacking factors remain, but it is shown that a lifting of degeneracy protected by the nonsymmorphic symmetry through the superlattice formation is a key ingredient for the metal-insulator transition in RuAs.

  16. P-wave holographic superconductor/insulator phase transitions affected by dark matter sector

    International Nuclear Information System (INIS)

    Rogatko, Marek; Wysokinski, Karol I.

    2016-01-01

    The holographic approach to building the p-wave superconductors results in three different models: the Maxwell-vector, the SU(2) Yang-Mills and the helical. In the probe limit approximation, we analytically examine the properties of the first two models in the theory with dark matter sector. It turns out that the effect of dark matter on the Maxwell-vector p-wave model is the same as on the s-wave superconductor studied earlier. For the non-Abelian model we study the phase transitions between p-wave holographic insulator/superconductor and metal/superconductor. Studies of marginally stable modes in the theory under consideration allow us to determine features of p-wave holographic droplet in a constant magnetic field. The dependence of the superconducting transition temperature on the coupling constant α to the dark matter sector is affected by the dark matter density ρ_D. For ρ_D>ρ the transition temperature is a decreasing function of α. The critical chemical potential μ_c for the quantum phase transition between insulator and metal depends on the chemical potential of dark matter μ_D and for μ_D=0 is a decreasing function of α.

  17. On the Mott transition and the new metal-insulator transitions in doped covalent and polar crystals

    International Nuclear Information System (INIS)

    Dzhumanov, S.; Begimkulov, U.; Kurbanov, U.T.; Yavidov, B.Y.

    2001-10-01

    The Mott transition and new metal-insulator transitions (MIT's) and their distinctive features in doped covalent semiconductors and polar compounds are studied within the continuum model of extrinsic carrier self-trapping, the Hubbard impurity band model (with on-site Coulomb repulsion and screening effects) and the extrinsic (bi)polaronic band model (with short- and long-range carrier-impurity, impurity-phonon and carrier-phonon interactions and intercarrier correlation) using the appropriate tight-binding approximations and variational methods. We have shown the formation possibility of large-radius localized one- and two-carrier impurity (or defect) states and narrow impurity bands in the band gap and charge transfer gap of these carrier-doped systems. The extrinsic Mott-Hubbard and (bi)polaronic insulating gaps are calculated exactly. The proper criterions for Mott transition, extrinsic excitonic and (bi)polaronic MIT's are obtained. We have demonstrated that the Mott transition occurs in doped covalent semiconductors (i.e. Si and Ge) and some insulators with weak carrier-phonon coupling near the large-radius dopants. While, in doped polar compounds (e.g. oxide high-T c superconductors (HTSC) and related materials) the MIT's are new extrinsic (or intrinsic) (bi)polaronic MIT's. We have found that the anisotropy of the dielectric (or (bi)polaronic) properties of doped cuprate HTSC is responsible for smooth (or continuous) MIT's, stripe formation and suppression of high-T c superconductivity. Various experimental results on in-gap states, bands and MIT's in doped covalent semiconductors, oxide HTSC and related materials are in good agreement with the developed theory of Mott transition and new (bi)polaronic MIT's. (author)

  18. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    Science.gov (United States)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-07-01

    We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

  19. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    OpenAIRE

    Bragaglia, Valeria; Arciprete, Fabrizio; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a f...

  20. New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2005-01-01

    We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly...

  1. Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

    Directory of Open Access Journals (Sweden)

    Swagata Acharya

    2018-05-01

    Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

  2. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    International Nuclear Information System (INIS)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-01-01

    We report the frequency-dependent conductivity of the manganite system La 1-x Sr x MnO 3 (x≤0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  3. A Brillouin scattering study of La0.77Ca0.23MnO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Seikh, Md Motin; Narayana, Chandrabhas; Sudheendra, L; Sood, A K; Rao, C N R

    2004-01-01

    Temperature-dependent Brillouin scattering studies have been carried out on La 0.77 Ca 0.23 MnO 3 across the paramagnetic insulator-ferromagnetic metal (I-M) transition (T C ∼ 230 K). The spectra show modes corresponding to a surface Rayleigh wave (SRW) and a high velocity pseudo-surface wave (HVPSAW) along with bulk acoustic waves (B1 and B2). The Brillouin shifts associated with the SRW and HVPSAW increase, whereas the B1 and B2 frequencies decrease, below T C . The temperature dependence of the SRW and HVPSAW modes is related to the increase in the elastic constant C 11 across the I-M transition. The decrease in frequency across the I-M transition of the bulk modes is understood to be due to enhanced self-energy corrections as a result of increased magnon-phonon interaction across the I-M transition. Correspondingly, these modes show a large increase in the full width at half maximum (FWHM) as the temperature decreases. We also observe a central peak whose width is maximum at T C

  4. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    Science.gov (United States)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  5. Metal-Insulator Transition Revisited for Cold Atoms in Non-Abelian Gauge Potentials

    International Nuclear Information System (INIS)

    Satija, Indubala I.; Dakin, Daniel C.; Clark, Charles W.

    2006-01-01

    We discuss the possibility of realizing metal-insulator transitions with ultracold atoms in two-dimensional optical lattices in the presence of artificial gauge potentials. For Abelian gauges, such transitions occur when the magnetic flux penetrating the lattice plaquette is an irrational multiple of the magnetic flux quantum. Here we present the first study of these transitions for non-Abelian U(2) gauge fields. In contrast to the Abelian case, the spectrum and localization transition in the non-Abelian case is strongly influenced by atomic momenta. In addition to determining the localization boundary, the momentum fragments the spectrum. Other key characteristics of the non-Abelian case include the absence of localization for certain states and satellite fringes around the Bragg peaks in the momentum distribution and an interesting possibility that the transition can be tuned by the atomic momenta

  6. Metal-insulator transition in NiS.sub.2-x./sub.Se.sub.x./sub

    Czech Academy of Sciences Publication Activity Database

    Kuneš, Jan; Baldassarre, L.; Schachner, B.; Rabia, K.; Kuntscher, C.A.; Korotin, D. M.; Anisimov, V.I.; McLeod, J.A.; Kurmaev, E.Z.; Moewes, A.

    2010-01-01

    Roč. 81, č. 3 (2010), 035112/1-035112/6 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : metal-insulator transition * dynamical mean-field theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010 http://prb.aps.org/abstract/PRB/v81/i3/e035122

  7. Optical Response of Cu1-xZnxIr2S4 Due to Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Chen, L.; Matsunami, M.; Nanba, T.; Cao, G.; Suzuki, H.; Isobe, M.; Matsumoto, T.

    2003-01-01

    The mother material CuIr 2 S 4 of the thiospinel system Cu 1-x Zn x Ir 2 S 4 undergoes a temperature-induced metal--insulator (Mi) transition. We report the temperature dependence of the optical reflection spectra of Cu 1-x Zn x Ir 2 S 4 (x ≤ 0.5) at the temperatures of 8-300 K in the energy regions of 0.005--30 eV in order to study the change in the electronic structure due to the Zn substitution for Cu. Zn substitution induced mainly the splitting of the hybridization band between the Ir-5d(t 2g ) and S-3 p states crossing the E F . Obtained optical conductivity (σ ) spectrum is discussed in relation to the change in the electronic structure close to the E F . (author)

  8. Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

    Directory of Open Access Journals (Sweden)

    Arima T.

    2013-03-01

    Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

  9. On the energy scale involved in the metal to insulator transition of quadruple perovskite EuCu3Fe4O12: infrared spectroscopy and ab-initio calculations.

    Science.gov (United States)

    Brière, B; Kalinko, A; Yamada, I; Roy, P; Brubach, J B; Sopracase, R; Zaghrioui, M; Phuoc, V Ta

    2016-06-27

    Optical measurements were carried out by infrared spectroscopy on AA'3B4O12 A-site ordered quadruple perovskite EuCu3Fe4O12 (microscopic sample) as function of temperature. At 240 K (=TMI), EuCu3Fe4O12 undergoes a very abrupt metal to insulator transition, a paramagnetic to antiferromagnetic transition and an isostructural transformation with an abrupt large volume expansion. Above TMI, optical conductivity reveals a bad metal behavior and below TMI, an insulating phase with an optical gap of 125 meV is observed. As temperature is decreased, a large and abrupt spectral weight transfer toward an energy scale larger than 1 eV is detected. Concurrently, electronic structure calculations for both high and low temperature phases were compared to the optical conductivity results giving a precise pattern of the transition. Density of states and computed optical conductivity analysis identified Cu3dxy, Fe3d and O2p orbitals as principal actors of the spectral weight transfer. The present work constitutes a first step to shed light on EuCu3Fe4O12 electronic properties with optical measurements and ab-initio calculations.

  10. High pressure metallization of Mott Insulators: Magnetic, structural and electronic properties

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Hearne, G.; Sterer, E.; Taylor, R.D.; Jeanloz, R.

    1993-01-01

    High pressure studies of the insulator-metal transition in the (TM)I 2 (TM = V, Fe, Co and Ni) compounds are described. Those divalent transition-metal iodides are structurally isomorphous and classified as Mott Insulators. Resistivity, X-ray diffraction and Moessbauer Spectroscopy were employed to investigate the electronic, structural, and magnetic properties as a function of pressure both on the highly correlated and on the metallic regimes

  11. Mechanisms of spin-flipping and metal-insulator transition in nano-Fe3O4

    Science.gov (United States)

    Dito Fauzi, Angga; Aziz Majidi, Muhammad; Rusydi, Andrivo

    2017-04-01

    Fe3O4 is a half-metallic ferrimagnet with {{T}\\text{C}}˜ 860 K exhibiting metal-insulator transition (MIT) at  ˜120 K. In bulk form, the saturation magnetization is 0.6 Tesla (˜471 emu cm-3). A recent experimental study has shown that the saturation magnetization of nano-Fe3O4 thin films can achieve up to  ˜760 emu cm-3, attributed to spin-flipping of Fe ions at tetrahedral sites assisted by oxygen vacancies (V O). Such a system has shown to have higher MIT temperature (˜150 K). The spin-flipping is a new phenomenon in Fe3O4, while the MIT is a long-standing one. Here, we propose a model and calculations to investigate the mechanisms of both phenomena. Our results show that, for the system without V O, the ferrimagnetic configuration is energetically favorable. Remakably, upon inclusion of V O, the ground-state configuration switches into ferromagnetic. As for the MIT, by proposing temperature dependences of some hopping integrals in the model, we demonstrate that the system without and with V O undergo the MIT in slightly different ways, leading to higher MIT temperature for the system with V O, in agreement with the experimental data. Our results also show that the MIT in both systems occur concomitantly with the redistribution of electrons among the three Fe ions in each Fe3O4 formula unit. As such temperature dependences of hopping integrals may arise due to dynamic Jahn-Teller effects, our phenomenological theory may provide a way to reconcile existing theories relating the MIT to the structural transition and the charge ordering.

  12. Metal-insulator transition in disordered systems from the one-body density matrix

    DEFF Research Database (Denmark)

    Olsen, Thomas; Resta, Raffaele; Souza, Ivo

    2017-01-01

    The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered...... the one-body density matrix. The approach has a general ab initio formulation and could in principle be applied to realistic disordered materials by standard electronic structure methods....... systems. In particular, for noninteracting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based...

  13. La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

    Science.gov (United States)

    Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

    2017-11-01

    Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

  14. Absence of Mass Renormalization upon the Metal-Insulator Transition in La_1-xSr_xMnO_3

    Science.gov (United States)

    Okuda, T.; Asamitsu, A.; Tokura, Y.

    1998-03-01

    The low-temperature specific heat as well as the resistivity of La_1-xSr_xMnO3 crystals has been measured under magnetic fields to investigate the critical behavior of the metal-insulator (MI) transition, which is induced by carrier doping around a critical composition of x_c=0.17. We observed the reduction of specific heat by application of magnetic fields, which is due to the suppression of the contribution of spin wave. Thus, the magnetic contribution to the specific heat was carefully removed to extract the electronic contribution. The effective mass, derived from obtained electronic specific heat coefficient γ, is a few times as large as a bare mass in the ferromagnetic metallic state, e.g. γ = 3.5 (mJ/K^2 mole) at x=0.3, and does not critically increase around the critical point while showing the maximum value γ = 5.1 (mJ/K^2 mole) at x=0.18. This is in contrast with the conspicuous mass renormalization effect as observed for other transition metal oxide, eg. V_2O3 and LaTiO_3. The γ value rather decreases with the decrease of x from 0.18 to 0.15, namely in the immediate vicinity of the MI boundary. This suggests that the Fermi surface gradually shrinks towards the insulating phase and finally disappears at the MI phase boundary. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan.

  15. Direct detection of metal-insulator phase transitions using the modified Backus-Gilbert method

    Directory of Open Access Journals (Sweden)

    Ulybyshev Maksim

    2018-01-01

    Full Text Available The detection of the (semimetal-insulator phase transition can be extremely difficult if the local order parameter which characterizes the ordered phase is unknown. In some cases, it is even impossible to define a local order parameter: the most prominent example of such system is the spin liquid state. This state was proposed to exist in the Hubbard model on the hexagonal lattice in a region between the semimetal phase and the antiferromagnetic insulator phase. The existence of this phase has been the subject of a long debate. In order to detect these exotic phases we must use alternative methods to those used for more familiar examples of spontaneous symmetry breaking. We have modified the Backus-Gilbert method of analytic continuation which was previously used in the calculation of the pion quasiparticle mass in lattice QCD. The modification of the method consists of the introduction of the Tikhonov regularization scheme which was used to treat the ill-conditioned kernel. This modified Backus-Gilbert method is applied to the Euclidean propagators in momentum space calculated using the hybrid Monte Carlo algorithm. In this way, it is possible to reconstruct the full dispersion relation and to estimate the mass gap, which is a direct signal of the transition to the insulating state. We demonstrate the utility of this method in our calculations for the Hubbard model on the hexagonal lattice. We also apply the method to the metal-insulator phase transition in the Hubbard-Coulomb model on the square lattice.

  16. Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

    Science.gov (United States)

    Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

    2005-10-01

    Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

  17. Theoretical formulation of optical conductivity of La0.7Ca0.3MnO3 exhibiting paramagnetic insulator - ferromagnetic metal transition

    Science.gov (United States)

    Satiawati, L.; Majidi, M. A.

    2017-07-01

    A theory of high-energy optical conductivity of La0.7Ca0.3MnO3 has been proposed previously. The proposed theory works to explain the temperature-dependence of the optical conductivity for the photon energy region above ˜0.5 eV for up to ˜22 eV, but fails to capture the correct physics close to the dc limit in which metal-insulator transition occurs. The missing physics at the low energy has been acknowledged as mainly due to not incorporating phonon degree of freedom and electron-phonon interactions. In this study, we aim to complete the above theory by proposing a more complete Hamiltonian incorporating additional terms such as crystal field, two modes of Jahn-Teller vibrations, and coupling between electrons and the two Jahn-Teller vibrational modes. We solve the model by means of dynamical mean-field theory. At this stage, we aim to derive the analytical formulae involved in the calculation, and formulate the algorithmic implementation for the self-consistent calculation process. Our final goal is to compute the density of states and the optical conductivity for the complete photon energy range from 0 to 22 eV at various temperatures, and compare them with the experimental data. We expect that the improved model preserves the correct temperature-dependent physics at high photon energies, as already captured by the previous model, while it would also reveal ferromagnetic metal - paramagnetic insulator transition at the dc limit.

  18. Nuclear reactor pressure vessel with an inner metal coating covered with a high temperature resistant thermal insulator

    International Nuclear Information System (INIS)

    1974-01-01

    The thermal insulator covering the metal coating of a reactor vessel is designed for resisting high temperatures. It comprises one or several porous layers of ceramic fibers or of stacked metal foils, covered with a layer of bricks or ceramic tiles. The latter are fixed in position by fasteners comprising pins fixed to the coating and passing through said porous layers and fasteners (nut or bolts) for individually fixing the bricks to said pins, whereas ceramic plugs mounted on said bricks or tiles provide for the thermal insulation of the pins and of the nuts or bolts; such a thermal insulation can be applied to high-temperature reactors or to fast reactors [fr

  19. Probing charge transfer during metal-insulator transitions in graphene-LaAlO3/SrTiO3 systems

    Science.gov (United States)

    Aliaj, I.; Sambri, A.; Miseikis, V.; Stornaiuolo, D.; di Gennaro, E.; Coletti, C.; Pellegrini, V.; Miletto Granozio, F.; Roddaro, S.

    2018-06-01

    Two-dimensional electron systems (2DESs) at the interface between LaAlO3 (LAO) and SrTiO3 (STO) perovskite oxides display a wide class of tunable phenomena ranging from superconductivity to metal-insulator transitions. Most of these effects are strongly sensitive to surface physics and often involve charge transfer mechanisms, which are, however, hard to detect. In this work, we realize hybrid field-effect devices where graphene is used to modulate the transport properties of the LAO/STO 2DES. Different from a conventional gate, graphene is semimetallic and allows us to probe charge transfer with the oxide structure underneath the field-effect electrode. In LAO/STO samples with a low initial carrier density, graphene-covered regions turn insulating when the temperature is lowered to 3 K, but conduction can be restored in the oxide structure by increasing the temperature or by field effect. The evolution of graphene's electron density is found to be inconsistent with a depletion of LAO/STO, but it rather points to a localization of interfacial carriers in the oxide structure.

  20. Magnetic Excitations across the Metal-Insulator Transition in the Pyrochlore Iridate Eu2Ir2O7

    Science.gov (United States)

    Chun, Sae Hwan; Yuan, Bo; Casa, Diego; Kim, Jungho; Kim, Chang-Yong; Tian, Zhaoming; Qiu, Yang; Nakatsuji, Satoru; Kim, Young-June

    2018-04-01

    We report a resonant inelastic x-ray scattering study of the magnetic excitation spectrum in a highly insulating Eu2 Ir2 O7 single crystal that exhibits a metal-insulator transition at TMI=111 (7 ) K . A propagating magnon mode with a 20 meV bandwidth and a 28 meV magnon gap is found in the excitation spectrum at 7 K, which is expected in the all-in-all-out magnetically ordered state. This magnetic excitation exhibits substantial softening as the temperature is raised towards TMI and turns into a highly damped excitation in the paramagnetic phase. Remarkably, the softening occurs throughout the whole Brillouin zone including the zone boundary. This observation is inconsistent with the magnon renormalization expected in a local moment system and indicates that the strength of the electron correlation in Eu2 Ir2 O7 is only moderate, so that electron itinerancy should be taken into account in describing its magnetism.

  1. Thermal insulation of high temperature reactors

    International Nuclear Information System (INIS)

    Cornille, Y.

    1975-01-01

    Operating conditions of HTR thermal insulation are given and heat insulators currently developed are described (fibers kept in position by metallic structures). For future applications and higher temperatures, research is directed towards solutions using ceramics or associating fibers and ceramics [fr

  2. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  3. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  4. Electric controlling of surface metal-insulator transition in the doped BaTiO3 film

    Directory of Open Access Journals (Sweden)

    Wei Xun

    2017-07-01

    Full Text Available Based on first-principles calculations, the BaTiO3(BTO film with local La-doping is studied. For a selected concentration and position of doping, the surface metal-insulator transition occurs under the applied electric field, and the domain appears near the surface for both bipolar states. Furthermore, for the insulated surface state, i.e., the downward polarization state in the doped film, the gradient bandgap structure is achieved, which favors the absorption of solar energy. Our investigation can provide an alternative avenue in modification of surface property and surface screening effect in polar materials.

  5. Investigation of deterioration mechanism of electrical ceramic insulating materials under high temperature

    International Nuclear Information System (INIS)

    Mizutani, Yoshinobu; Ito, Tetsuo; Okamoto, Tatsuki; Kumazawa, Ryoji; Aizawa, Rie; Moriyama, Hideshige

    2000-01-01

    It is thought that ceramic insulator can be applied to electric power equipments that are under high temperature not to be able use organic materials. Our research has suggested components of mica-alumina combined insulation. As the results of and carried out temperature accelerating test, combined insulation life is expected long term over 40 years at over 500-Celsius degrees. However to construct high reliable insulating system, it is clarified deterioration mechanism on combined insulation and evaluates life of that. Therefore we carried out metal behavior test and voltage aging test using mica-sheet and alumina-cloth that are components of combined insulation under high temperature in nitrogen gas atmosphere. It is cleared two metal behavior mechanisms: One is that the opening of insulator are filled up with copper that is oxidized, the other is the metal diffuses in alumina-cloth through surface. And distance of metal behavior is able to be estimated at modulate temperature and in modulate time. It is also cleared that alumina-cloth is deteriorated by metal behavior into alumina-cloth. These results indicate that combined insulation is deteriorated from electrode side by metal behavior and is finally broken down through alumina-cloth. (author)

  6. Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

    Directory of Open Access Journals (Sweden)

    M. Talafi Noghani

    2014-02-01

    Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

  7. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

    Science.gov (United States)

    Li, Xuefei; Grassi, Roberto; Li, Sichao; Li, Tiaoyang; Xiong, Xiong; Low, Tony; Wu, Yanqing

    2018-01-10

    Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.

  8. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Science.gov (United States)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  9. Correlated effective field theory in transition metal compounds

    International Nuclear Information System (INIS)

    Mukhopadhyay, Subhasis; Chatterjee, Ibha

    2004-01-01

    Mean field theory is good enough to study the physical properties at higher temperatures and in higher dimensions. It explains the critical phenomena in a restricted sense. Near the critical temperatures, when fluctuations become important, it may not give the correct results. Similarly in low dimensions, the correlations become important and the mean field theory seems to be inadequate to explain the physical phenomena. At low-temperatures too, the quantum correlations become important and these effects are to be treated in an appropriate way. In 1974, Prof. M.E. Lines of Bell Laboratories, developed a theory which goes beyond the mean field theory and is known as the correlated effective field (CEF) theory. It takes into account the fluctuations in a semiempirical way. Lines and his collaborators used this theory to explain the short-range correlations and their anisotropy in the paramagnetic phase. Later Suzuki et al., Chatterjee and Desai, Mukhopadhyay and Chatterjee applied this theory to the magnetically ordered phase and a tremendous success of the theory has been found in real systems. The success of the CEF theory is discussed in this review. In order to highlight the success of this theory, earlier effective field theories and their improvements over mean field theories e.g., Bethe-Peierls-Weiss method, reaction field approximation, etc., are also discussed in this review for completeness. The beauty of the CEF theory is that it is mean field-like, but captures the essential physics of real systems to a great extent. However, this is a weak correlated theory and as a result is inappropriate for the metallic phase when strong correlations become important. In recent times, transition metal oxides become important due to the discovery of the high-temperature superconductivity and the colossal magnetoresistance phenomena. These oxides seem to be Mott insulators and undergo an insulator to metal transition by applying magnetic field, pressure and by changing

  10. A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-07-27

    Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

  11. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    Energy Technology Data Exchange (ETDEWEB)

    Lysenko, Sergiy, E-mail: sergiy.lysenko@upr.edu; Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph [Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681 (United States); Aparicio, Joaquin [Department of Physics, University of Puerto Rico-Ponce, Ponce, Puerto Rico 00732 (United States); Sepúlveda, Nelson [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  12. Critical metal-insulator transition and divergence in a two-particle irreducible vertex in disordered and interacting electron systems

    Czech Academy of Sciences Publication Activity Database

    Janiš, Václav; Pokorný, Vladislav

    2014-01-01

    Roč. 90, č. 4 (2014), "045143-1"-"045143-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : metal-insulator transition * disordered and interacting electron systems * dynamical mean-field theory * critical behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  13. The metal-insulator transition of RNiO3 perovskites. What can we learn from neutron diffraction?

    International Nuclear Information System (INIS)

    Medarde, M.L.

    1996-01-01

    RNiO 3 perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R≠La, whose critical temperature T M-I increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs

  14. Predicting a new phase (T'') of two-dimensional transition metal di-chalcogenides and strain-controlled topological phase transition

    Science.gov (United States)

    Ma, Fengxian; Gao, Guoping; Jiao, Yalong; Gu, Yuantong; Bilic, Ante; Zhang, Haijun; Chen, Zhongfang; Du, Aijun

    2016-02-01

    Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices.Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological

  15. Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

    Science.gov (United States)

    McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

    2018-03-01

    Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of (010)VO2|| (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

  16. Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

    International Nuclear Information System (INIS)

    Makise, K; Kawaguti, T; Shinozaki, B

    2009-01-01

    This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

  17. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  18. Boson localization and the superfluid-insulator transition

    International Nuclear Information System (INIS)

    Fisher, M.P.A.; Weichman, P.B.; Grinstein, G.; Fisher, D.S.; Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598; Joseph Henry Laboratory of Physics, Jadwin Hall, Princeton University, Princeton, New Jersey 08544)

    1989-01-01

    The phase diagrams and phase transitions of bosons with short-ranged repulsive interactions moving in periodic and/or random external potentials at zero temperature are investigated with emphasis on the superfluid-insulator transition induced by varying a parameter such as the density. Bosons in periodic potentials (e.g., on a lattice) at T=0 exhibit two types of phases: a superfluid phase and Mott insulating phases characterized by integer (or commensurate) boson densities, by the existence of a gap for particle-hole excitations, and by zero compressibility. Generically, the superfluid onset transition in d dimensions from a Mott insulator to superfluidity is ''ideal,'' or mean field in character, but at special multicritical points with particle-hole symmetry it is in the universality class of the (d+1)-dimensional XY model. In the presence of disorder, a third, ''Bose glass'' phase exists. This phase is insulating because of the localization effects of the randomness and analogous to the Fermi glass phase of interacting fermions in a strongly disordered potential

  19. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Tao; Qi, Zeming, E-mail: zmqi@ustc.edu.cn; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Wang, Yu [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 201204 (China); Liu, Miao [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  20. The metal-insulator transition of RNiO{sub 3} perovskites. What can we learn from neutron diffraction?

    Energy Technology Data Exchange (ETDEWEB)

    Medarde, M L [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1996-11-01

    RNiO{sub 3} perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R{ne}La, whose critical temperature T{sub M-I} increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs.

  1. Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

    Science.gov (United States)

    Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

    2006-05-01

    The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.

  2. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

    Science.gov (United States)

    Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

    2015-12-23

    We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  3. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  4. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  5. Nanoscale Phase Separation and Lattice Complexity in VO2: The Metal–Insulator Transition Investigated by XANES via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

    Directory of Open Access Journals (Sweden)

    Augusto Marcelli

    2017-12-01

    Full Text Available Among transition metal oxides, VO2 is a particularly interesting and challenging correlated electron material where an insulator to metal transition (MIT occurs near room temperature. Here we investigate a 16 nm thick strained vanadium dioxide film, trying to clarify the dynamic behavior of the insulator/metal transition. We measured (resonant photoemission below and above the MIT transition temperature, focusing on heating and cooling effects at the vanadium L23-edge using X-ray Absorption Near-Edge Structure (XANES. The vanadium L23-edges probe the transitions from the 2p core level to final unoccupied states with 3d orbital symmetry above the Fermi level. The dynamics of the 3d unoccupied states both at the L3- and at the L2-edge are in agreement with the hysteretic behavior of this thin film. In the first stage of the cooling, the 3d unoccupied states do not change while the transition in the insulating phase appears below 60 °C. Finally, Resonant Photoemission Spectra (ResPES point out a shift of the Fermi level of ~0.75 eV, which can be correlated to the dynamics of the 3d// orbitals, the electron–electron correlation, and the stability of the metallic state.

  6. Pressure-induced structural changes and insulator-metal transition in layered bismuth triiodide, BiI3: a combined experimental and theoretical study

    International Nuclear Information System (INIS)

    Devidas, T R; Chandra Shekar, N V; Sundar, C S; Chithaiah, P; Rao, C N R; Sorb, Y A; Bhadram, V S; Chandrabhas, N; Pal, K; Waghmare, U V

    2014-01-01

    Noting that BiI 3 and the well-known topological insulator (TI) Bi 2 Se 3 have the same high symmetry parent structures, and that it is desirable to find a wide-band gap TI, we determine here the effects of pressure on the structure, phonons and electronic properties of rhombohedral BiI 3 . We report a pressure-induced insulator-metal transition near 1.5 GPa, using high pressure electrical resistivity and Raman measurements. X-ray diffraction studies, as a function of pressure, reveal a structural peculiarity of the BiI 3 crystal, with a drastic drop in c/a ratio at 1.5 GPa, and a structural phase transition from rhombohedral to monoclinic structure at 8.8 GPa. Interestingly, the metallic phase, at relatively low pressures, exhibits minimal resistivity at low temperatures, similar to that in Bi 2 Se 3 . We corroborate these findings with first-principles calculations and suggest that the drop in the resistivity of BiI 3 in the 1–3 GPa range of pressure arises possibly from the appearance of an intermediate crystal phase with a lower band-gap and hexagonal crystal structure. Calculated Born effective charges reveal the presence of metallic states in the structural vicinity of rhombohedral BiI 3 . Changes in the topology of the electronic bands of BiI 3 with pressure, and a sharp decrease in the c/a ratio below 2 GPa, are shown to give rise to changes in the slope of phonon frequencies near that pressure. (paper)

  7. Quantum phase transitions of a disordered antiferromagnetic topological insulator

    Science.gov (United States)

    Baireuther, P.; Edge, J. M.; Fulga, I. C.; Beenakker, C. W. J.; Tworzydło, J.

    2014-01-01

    We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called "statistical" topological phase.

  8. Cryogenic microwave imaging of metal–insulator transition in doped silicon

    KAUST Repository

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-01-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.

  9. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio; Colizzi, G.; Filippetti, A.; Fiorentini, Vincenzo; Schwingenschlö gl, Udo

    2013-01-01

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  10. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio

    2013-06-21

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  11. Magnetic and transport properties of Ni2MnGa-BaTiO3 metal-insulator particulate composite with percolation threshold

    International Nuclear Information System (INIS)

    Won, C.J.; Kambale, R.C.; Hur, N.

    2011-01-01

    Highlights: → The Ni 2 MnGa-BaTiO 3 type composites were first time prepared by solid state reaction. → Temperature dependent magnetic properties reveal two kinds of transitions in these composite. → The present materials show negative magnetoresistance effect. → The present studies on magnetic and electrical transport of metal/insulator (NMG/BTO) composites shows the resistivity change associated to filamentary conducting path at percolation threshold. - Abstract: Here we report the magnetic and transport properties of the metal/insulator (f NMG )Ni 2 MnGa/(1 - f NMG )BaTiO 3 composites. The X-ray diffraction study confirms the formation of both the phases in composite. The microstructure reveals that the conducting Ni 2 MnGa particles are well dispersed in an insulating BaTiO 3 matrix. Temperature dependent magnetization shows two transitions one above 300 K and other below 150 K. The temperature dependence resistivity near the percolation threshold f NMG = 0.4 had drastic changes which is higher than the f NMG = 0.5. Also the negative magnetoresistance effect was observed for the studied materials. We suggest that magnetic and transport properties at the percolation threshold can be adjusted by the strain from the surrounding insulator particle.

  12. Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

    Science.gov (United States)

    Ward, T Z; Gai, Z; Xu, X Y; Guo, H W; Yin, L F; Shen, J

    2011-04-15

    In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

  13. Beginning point of metal to insulator transition for Bi-2223 superconducting matrix doped with Eu nanoparticles

    International Nuclear Information System (INIS)

    Yildirim, G.

    2013-01-01

    Highlights: •Standard measurements such as bulk density, ρ-T, J ct , XRD, SEM and EDX examinations for characterization of the samples. •Role of Eu inclusions on the microstructural, electrical and superconducting properties of Bi-2223 phase. •Determination of metal to insulator transition due to Eu impurities in the Bi-2223 superconducting matrix. •From the Eu content level of x = 0.5 onwards, destruction of the superconducting phases. •Constant retrogression of the microstructural and superconducting properties with the Eu individuals. -- Abstract: This comprehensive study examines the change of the microstructural, electrical and superconducting properties of the Eu doped Bi 1.8 Pb 0.4 Eu x Sr 2 Ca 2.2 Cu 3.0 O y ceramic cuprates (with x ⩽ 0.7) produced by the conventional solid state reaction method at the constant annealing temperature of 840 °C for 24 h with the aid of the standard characterization measurements such as bulk density, dc resistivity (ρ-T), transport critical current density (J c ), X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron dispersive X-ray (EDX) examinations. For the full characterization of the pure and Eu doped Bi-2223 samples, the degree of granularity (from the bulk density and porosity measurements); the room temperature resistivity, onset–offset critical transition temperature, variation of transition temperature, hole carrier concentration, spin-gap opening temperature and thermodynamic fluctuations (from the dc resistivity experiments); the texturing, crystal structure, crystallite size, phase purity and cell parameters (from the XRD investigations); the variation of the flux pinning centers and the boundary weak-links between the superconducting grains (from the critical current density values); the crystallinity, specimen surface morphology, grain connectivity between the superconducting grains and grain size distribution (from the SEM examinations), the elemental compositions and

  14. An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip

    2002-03-19

    One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

  15. Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures

    Directory of Open Access Journals (Sweden)

    Woong-Ki Hong

    2015-01-01

    Full Text Available The metal-insulator transition (MIT in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2 has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.

  16. Gate-controlled metal-insulator transition in the LaAlO{sub 3}/SrTiO{sub 3} system with sub-critical LaAlO{sub 3} thickness

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Sung; Lee, Seung Ran; Chang, Jung-Won; Noh, Hyunho; Baasandorj, Lkhagvasuren; Shim, Seung-Bo; Kim, Jinhee [Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Seung, Sang Keun; Shin, Hyun Sup; Song, Jonghyun [Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2012-12-15

    We studied the electrical conduction in the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface electron system with a sub-critical LAO layer thickness of {proportional_to}3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back-gate voltage. The superior gate-controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Extrinsic and intrinsic properties in metal–insulator transition of hydrothermally prepared vanadium dioxide crystals

    International Nuclear Information System (INIS)

    Lee, Myeongsoon; Kim, Don

    2014-01-01

    The clear insulator (monoclinic-VO 2 ) to metal (rutile-VO 2 ) transition (IMT) was observed in electrical conductivity and differential scanning calorimeter (DSC) measurements at around 340 K, which is IMT temperature (T H ), in the hydrothermally prepared VO 2 crystals. The occurrence of metal to insulator transition (MIT) temperature (T C ) was observed below 333 K during the first resistance measurement cycle in the most of cases. The sudden jump of the electrical resistance at IMT and MIT points was amplified several times than that of the first cycle during the repeated successive thermal cycles (heating and cooling across the IMT and MIT temperatures). T C and T H shifted to higher temperature by the repeated successive thermal cycles. This shift and the amplified jump might be related to the mechanical stress between the VO 2 crystals, i.e. extrinsic properties. However, the starting point of MIT, T CS = ∼ 336 K, and the starting point of IMT, T HS = ∼ 338 K, kept almost constant during the repeated thermal cycles (< 10 times). These two temperatures may be related to the intrinsic properties of the VO 2 : the phase transitions initiated at these temperatures regardless of the number of the repeated thermal cycles. The neat surface of the VO 2 crystals was severely damaged and the average size of particles reduced from 110 nm to 70–90 nm after extensively repeated thermal cycles (> 70 times). The damaged surface and the smaller particles, which would be originated from the mechanical stress caused by crystal volume change during the first order transition of the VO 2 , would weaken the electrical conduction path (loosen grain boundaries) between the VO 2 single crystals and would result in the amplified jump at the following MIT. This report may boost the study for the improved stability and lifetime of the VO 2 based electronic devices. - Highlights: • The sharp phase transition in cluster of VO 2 crystals depends on repeated thermal cycles.

  18. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  19. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  20. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    International Nuclear Information System (INIS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-01-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO 2 ) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO 2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management

  1. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  2. Superconductor-insulator transitions in 2D: the experimental situation

    International Nuclear Information System (INIS)

    Markovic, N.; Christiansen, C.; Mack, A.; Goldman, A.M.

    2000-01-01

    Superconductor-insulator (SI) transitions in ultrathin films have attracted significant attention over the last decade because of the possibility that they are quantum phase transitions. Magnetic field, film thickness, or carrier concentration can be used as control parameters. The bosonic pictures of these transitions proposed some years ago are only in qualitative agreement with experiment. In particular, the critical resistance appears not to be universal, and there are variations in the values of critical exponents. It has been concluded that in real films fermionic degrees of freedom must be taken into account. There are also indications that the phase diagram may include a significant metallic phase separating the superconducting and insulating phases, and that the transition may have a significant percolative aspect. The experimental situation will be broadly reviewed with attention paid to issues relating to materials and measurements. (orig.)

  3. Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

    Science.gov (United States)

    Alimardani, N.; Conley, J. F.

    2013-09-01

    We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

  4. Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2.

    Science.gov (United States)

    Moon, Byoung Hee; Bae, Jung Jun; Joo, Min-Kyu; Choi, Homin; Han, Gang Hee; Lim, Hanjo; Lee, Young Hee

    2018-05-24

    Quantum localization-delocalization of carriers are well described by either carrier-carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS 2 due to a dominating disorder.

  5. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  6. Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn=P, As, Sb)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Takagi, Hidenori

    2012-04-01

    Binary ruthenium pnictides, RuP and RuAs, with an orthorhombic MnP structure, were found to show a metal to a nonmagnetic insulator transition at TMI = 270 and 200 K, respectively. In the metallic region above TMI, a structural phase transition, accompanied with a weak anomaly in the resistivity and the magnetic susceptibility, indicative of a pseudogap formation, was identified at Ts = 330 and 280 K, respectively. These two transitions were suppressed by substituting Ru with Rh. We found superconductivity with a maximum Tc = 3.7 and 1.8 K in a narrow composition range around the critical point for the pseudogap phase, Rh content xc = 0.45 and 0.25 for Ru1-xRhxP and Ru1-xRhxAs, respectively, which may provide us with a nonmagnetic route to superconductivity at a quantum critical point.

  7. Luminescence from metals and insulators

    International Nuclear Information System (INIS)

    Crawford, O.H.

    1985-01-01

    The term luminescence is normally applied to light emission that is not explainable by the mechanisms discussed by the other speakers in this meeting. Specifically, it is not transition radiation, surface plasmon radiation, or bremsstrahlung. One normally thinks of luminescence as arising from one-electron transitions within a medium. This talk consists of an overview of luminescence from condensed matter under irradiation by either energetic particles or photons. The author begins with organic molecules, where luminescence is best understood, and then discusses inorganic insulators and metals. Finally, the dependence of yield upon projectile species and velocity is discussed, and predictions are made concerning the relative effectiveness of electrons, protons, and hydrogen atoms in exciting luminescence

  8. Insulator-insulator and insulator-conductor transitions in the phase diagram of aluminium trichloride

    Directory of Open Access Journals (Sweden)

    Romina Ruberto

    2009-01-01

    Full Text Available We report a classical computer-simulation study of the phase diagram of AlCl3 in the pressure-temperature (p, T plane, showing (i that melting from a layered crystal structure occurs into a molecular liquid at low (p, T and into a dissociated ionic liquid at high (p, T, and (ii that a broad transition from a molecular insulator to an ionic conductor takes place in the liquid state.

  9. Kondo-Anderson transitions

    Science.gov (United States)

    Kettemann, S.; Mucciolo, E. R.; Varga, I.; Slevin, K.

    2012-03-01

    Dilute magnetic impurities in a disordered Fermi liquid are considered close to the Anderson metal-insulator transition (AMIT). Critical power-law correlations between electron wave functions at different energies in the vicinity of the AMIT result in the formation of pseudogaps of the local density of states. Magnetic impurities can remain unscreened at such sites. We determine the density of the resulting free magnetic moments in the zero-temperature limit. While it is finite on the insulating side of the AMIT, it vanishes at the AMIT, and decays with a power law as function of the distance to the AMIT. Since the fluctuating spins of these free magnetic moments break the time-reversal symmetry of the conduction electrons, we find a shift of the AMIT, and the appearance of a semimetal phase. The distribution function of the Kondo temperature TK is derived at the AMIT, in the metallic phase, and in the insulator phase. This allows us to find the quantum phase diagram in an external magnetic field B and at finite temperature T. We calculate the resulting magnetic susceptibility, the specific heat, and the spin relaxation rate as a function of temperature. We find a phase diagram with finite-temperature transitions among insulator, critical semimetal, and metal phases. These new types of phase transitions are caused by the interplay between Kondo screening and Anderson localization, with the latter being shifted by the appearance of the temperature-dependent spin-flip scattering rate. Accordingly, we name them Kondo-Anderson transitions.

  10. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  11. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  12. Relationship between thermal expansion coefficient and glass transition temperature in metallic glasses

    International Nuclear Information System (INIS)

    Kato, H.; Chen, H.-S.; Inoue, A.

    2008-01-01

    The thermal expansion coefficients of 13 metallic glasses were measured using a thermo-mechanical analyser. A unique correlation was found between the linear thermal expansion coefficient and the glass transition temperature-their product is nearly constant ∼8.24 x 10 -3 . If one assumes the Debye expression for thermal activation, the total linear thermal expansion up to glass transition temperature (T g ) is reduced to 6 x 10 -3 , nearly 25% of that at the fusion of pure metals

  13. arXiv Gauge Topological Nature of the Superconductor-Insulator Transition

    CERN Document Server

    Diamantini, M.C.; Lukyanchuk, I.; Vinokur, V.M.

    It has long been believed that, at absolute zero, electrons can form only one quantum coherent state, a superconductor. Yet, several two dimensional superconducting systems were found to harbor the superinsulating state with infinite resistance, a mirror image of superconductivity, and a metallic state often referred to as Bose metal, characterized by finite longitudinal and vanishing Hall resistances. The nature of these novel and mysterious quantum coherent states is the subject of intense study.Here, we propose a topological gauge description of the superconductor-insulator transition (SIT) that enables us to identify the underlying mechanism of superinsulation as Polyakov's linear confinement of Cooper pairs via instantons. We find a criterion defining conditions for either a direct SIT or for the SIT via the intermediate Bose metal and demonstrate that this Bose metal phase is a Mott topological insulator in which the Cooper pair-vortex liquid is frozen by Aharonov-Bohm interactions.

  14. Metal-insulator transition in Si(111)-(4 x 1)/(8 x 2)-In studied by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speiser, E.; Hinrichs, K.; Cobet, C.; Esser, N. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Chandola, S. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); School of Physics, Trinity College Dublin 2 (Ireland); Gensch, M. [Helmholtz Zentrum Berlin (Germany); Wippermann, S.; Schmidt, W.G. [Theoretische Physik, Universitaet Paderborn (Germany); Bechstedt, F. [Institut fuer Festkoerpertheorie und -Optik, Friedrich-Schiller-Universitaet, Jena (Germany); Richter, W. [Dipartimento di Fisica, Universita di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fleischer, K.; McGilp, J.F. [School of Physics, Trinity College Dublin 2 (Ireland)

    2010-08-15

    Measurements of the surface vibrational modes and optical response of Si(111)-(4 x 1)/(8 x 2)-In are compiled and a comparison to ab initio calculations performed within DFT-LDA formalism is given. Surface resonant Raman spectroscopy allows identifying a number of surface phonons with high spectral precision. The phase transition of the (4 x 1)-(8 x 2) surface structure is found to be accompanied by characteristic changes of the surface phonons, which are discussed with respect to various structural models suggested. The optical anisotropy of the (8 x 2) phase shows that the anisotropic Drude tail of the (4 x 1) phase is replaced by two peaks at 0.50 and 0.72 eV. The spectroscopic signatures of the (4 x 1) and (8 x 2) phases agree with a metal-insulator transition. The mid-IR-anisotropic optical response of the insulating (8 x 2) phase is interpreted in terms of electronic single particle excitations between surface electronic bands related to the In-nanowire surface. Comparison of the measured optical transitions with DFT ab initio calculations for the hexagon model and the trimer model of the (8 x 2) structure shows evidence for the existence of the hexagon structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

    2003-01-01

    The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

  16. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    Science.gov (United States)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  17. Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

    International Nuclear Information System (INIS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-01-01

    We report anomalous resistance leaps and drops in VO 2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO 2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  18. Coexistence of metallic and insulating channels in compressed YbB6

    Science.gov (United States)

    Ying, Jianjun; Tang, Lingyun; Chen, Fei; Chen, Xianhui; Struzhkin, Viktor V.

    2018-03-01

    It remains controversial whether compressed YbB6 material is a topological insulator or a Kondo topological insulator. We performed high-pressure transport, x-ray diffraction (XRD), x-ray absorption spectroscopy, and Raman-scattering measurements on YbB6 samples in search for its topological Kondo phase. Both high-pressure powder XRD and Raman measurements show no trace of structural phase transitions in YbB6 up to 50 GPa. The nonmagnetic Yb2 + gradually change to magnetic Yb3 + above 18 GPa concomitantly with the increase in resistivity. However, the transition to the insulating state occurs only around 30 GPa, accompanied by the increase in the shear stress, and anomalies in the pressure dependence of the Raman T2 g mode and in the B atomic position. The resistivity at high pressures can be described by a model taking into account coexisting insulating and metallic channels with the activation energy for the insulating channel about 30 meV. We argue that YbB6 may become a topological Kondo insulator at high pressures above 35 GPa.

  19. High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

    International Nuclear Information System (INIS)

    Sirena, M.; Félix, L. Avilés; Haberkorn, N.

    2013-01-01

    High transition temperature superconductor (HTc)/SrTiO 3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10 −5 defects/μm 2 ). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions

  20. Solid-gate control of insulator to 2D metal transition at SrTiO3 surface

    Science.gov (United States)

    Schulman, Alejandro; Stoliar, Pablo; Kitoh, Ai; Rozenberg, Marcelo; Inoue, Isao H.

    As miniaturization of the semiconductor transistor approaches its limit, semiconductor industries are facing a major challenge to extend information processing beyond what can be attainable by conventional Si-based transistors. Innovative combinations of new materials and new processing platforms are desired. Recent discovery of the 2D electron gas (2DEG) at the surface of SrTiO3 (STO) and its electrostatic control, have carried it to the top of promising materials to be utilized in innovative devices. We report an electrostatic control of the carrier density of the 2DEG formed at the channel of bilayer-gated STO field-effect devices. By applying a gate electric field at room temperature, its highly insulating channel exhibits a transition to metallic one. This transition is accompanied by non-monotonic voltage-gain transfer characteristic with both negative and positive slope regions and unexpected enhancement of the sheet carrier density. We will introduce a numerical model to rationalize the observed features in terms of the established physics of field-effect transistors and the physics of percolation. Furthermore, we have found a clear signature of a Kondo effect that arises due to the interaction between the dilute 2DEG and localized Ti 3d orbitals originated by oxygen vacancies near the channel. On leave from CIC nanoGUNE, Spain.

  1. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Numerical studies on a plasmonic temperature nanosensor based on a metal-insulator-metal ring resonator structure for optical integrated circuit applications

    Science.gov (United States)

    Al-mahmod, Md. Jubayer; Hyder, Rakib; Islam, Md Zahurul

    2017-07-01

    A nanosensor, based on a metal-insulator-metal (MIM) plasmonic ring resonator, is proposed for potential on-chip temperature sensing and its performance is evaluated numerically. The sensor components can be fabricated by using planar processes on a silicon substrate, making its manufacturing compatible to planar electronic fabrication technology. The sensor, constructed using silver as the metal rings and a thermo-optic liquid ethanol film between the metal layers, is capable of sensing temperature with outstanding optical sensitivity, as high as -0.53 nm/°C. The resonance wavelength is found to be highly sensitive to the refractive index of the liquid dielectric film. The resonance peak can be tuned according to the requirement of intended application by changing the radii of the ring resonator geometries in the design phase. The compact size, planar and silicon-based design, and very high resolutions- these characteristics are expected to make this sensor technology a preferred choice for lab-on-a-chip applications, as compared to other contemporary sensors.

  3. Irradiation effect of the insulating materials for fusion superconducting magnets at cryogenic temperature

    Science.gov (United States)

    Kobayashi, Koji; Akiyama, Yoko; Nishijima, Shigehiro

    2017-09-01

    In ITER, superconducting magnets should be used in such severe environment as high fluence of fast neutron, cryogenic temperature and large electromagnetic forces. Insulating material is one of the most sensitive component to radiation. So radiation resistance on mechanical properties at cryogenic temperature are required for insulating material. The purpose of this study is to evaluate irradiation effect of insulating material at cryogenic temperature by gamma-ray irradiation. Firstly, glass fiber reinforced plastic (GFRP) and hybrid composite were prepared. After irradiation at room temperature (RT) or liquid nitrogen temperature (LNT, 77 K), interlaminar shear strength (ILSS) and glass-transition temperature (Tg) measurement were conducted. It was shown that insulating materials irradiated at room temperature were much degraded than those at cryogenic temperature.

  4. Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

    Science.gov (United States)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

  5. High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M.; Félix, L. Avilés [Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche, CNEA, Bustillo 9500, 8400 Bariloche (Argentina); Instituto Balseiro, Universidad Nacional de Cuyo and CNEA, 8400 Bariloche (Argentina); Haberkorn, N. [Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche, CNEA, Bustillo 9500, 8400 Bariloche (Argentina)

    2013-07-29

    High transition temperature superconductor (HTc)/SrTiO{sub 3} (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10{sup −5} defects/μm{sup 2}). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.

  6. Calculation of high-temperature insulation parameters and heat transfer behaviors of multilayer insulation by inverse problems method

    Directory of Open Access Journals (Sweden)

    Huang Can

    2014-08-01

    Full Text Available In the present paper, a numerical model combining radiation and conduction for porous materials is developed based on the finite volume method. The model can be used to investigate high-temperature thermal insulations which are widely used in metallic thermal protection systems on reusable launch vehicles and high-temperature fuel cells. The effective thermal conductivities (ECTs which are measured experimentally can hardly be used separately to analyze the heat transfer behaviors of conduction and radiation for high-temperature insulation. By fitting the effective thermal conductivities with experimental data, the equivalent radiation transmittance, absorptivity and reflectivity, as well as a linear function to describe the relationship between temperature and conductivity can be estimated by an inverse problems method. The deviation between the calculated and measured effective thermal conductivities is less than 4%. Using the material parameters so obtained for conduction and radiation, the heat transfer process in multilayer thermal insulation (MTI is calculated and the deviation between the calculated and the measured transient temperatures at a certain depth in the multilayer thermal insulation is less than 6.5%.

  7. Enhanced ferromagnetism, metal-insulator transition, and large magnetoresistance in La1-xCaxMn1-xRuxO3 free of eg-orbital double-exchange

    Science.gov (United States)

    Liu, M. F.; Du, Z. Z.; Liu, H. M.; Li, X.; Yan, Z. B.; Dong, S.; Liu, J.-M.

    2014-03-01

    The structure, ionic valences, magnetism, and magneto-transport behaviors of mixed valence oxides La1-xCaxMn1-xRuxO3 are systematically investigated. The simultaneous substitutions of La3+ and Mn3+ ions by Ca2+ and Ru4+, respectively, are confirmed by the structural and ionic valence characterizations, excluding the presence of Mn4+ and Ru3+ ions. The enhanced ferromagnetism, induced metal-insulator transition, and remarkable magnetoresistance effect are demonstrated when the substitution level x is lower than ˜0.6, in spite of the absence of the Mn3+-Ru4+ eg-orbital double-exchange. These anomalous magnetotransport effects are discussed based on the competing multifold interactions associated with the Mn3+-Ru4+ super-exchange and strong Ru4+-Ru4+ hopping, while the origins for the metal-insulator transition and magnetoresistance effect remain to be clarified.

  8. Quantum phase transitions of strongly correlated electron systems

    International Nuclear Information System (INIS)

    Imada, Masatoshi

    1998-01-01

    Interacting electrons in solids undergo various quantum phase transitions driven by quantum fluctuations. The quantum transitions take place at zero temperature by changing a parameter to control quantum fluctuations rather than thermal fluctuations. In contrast to classical phase transitions driven by thermal fluctuations, the quantum transitions have many different features where quantum dynamics introduces a source of intrinsic fluctuations tightly connected with spatial correlations and they have been a subject of recent intensive studies as we see below. Interacting electron systems cannot be fully understood without deep analyses of the quantum phase transitions themselves, because they are widely seen and play essential roles in many phenomena. Typical and important examples of the quantum phase transitions include metal-insulator transitions, (2, 3, 4, 5, 6, 7, 8, 9) metal-superconductor transitions, superconductor-insulator transitions, magnetic transitions to antiferromagnetic or ferromagnetic phases in metals as well as in Mott insulators, and charge ordering transitions. Here, we focus on three different types of transitions

  9. Ground state oxygen holes and the metal-insulator transition in rare earth nickelates

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, Thorsten; Bisogni, Valentina; Huang, Yaobo; Strocov, Vladimir [Research Department Synchrotron Radiation and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Catalano, Sara; Gibert, Marta; Scherwitzl, Raoul; Zubko, Pavlo; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva (Switzerland); Green, Robert J.; Balandeh, Shadi; Sawatzky, George [Department of Physics and Astronomy, University of British Columbia, Vancouver (Canada)

    2015-07-01

    Perovskite rare-earth (Re) nickelates ReNiO{sub 3} continue to attract a lot of interest owing to their intriguing properties like a sharp metal to insulator transition (MIT), unusual magnetic order and expected superconductivity in specifically tuned super-lattices. Full understanding of these materials, however, is hampered by the difficulties in describing their electronic ground state (GS). From X-ray absorption (XAS) at the Ni 2p{sub 3/2} edge of thin films of NdNiO{sub 3} and corresponding RIXS maps vs. incident and transferred photon energies we reveal that the electronic GS configuration of NdNiO{sub 3} is composed of delocalized and localized components. Our study conveys that a Ni 3d{sup 8}-like configuration with holes at oxygen takes on the leading role in the GS and the MIT of ReNiO{sub 3} as proposed by recent model theories.

  10. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  11. Evaluation of complexing agents and column temperature in ion chromatographic separation of alkali metals, alkaline earth metals and transition metals ion

    International Nuclear Information System (INIS)

    Kelkar, Anoop; Pandey, Ashish; Name, Anil B.; Das, D.K.; Behere, P.G.; Mohd Afzal

    2015-01-01

    The aim of ion chromatography method development is the resolution of all metal ions of interests. Resolution can be improved by changing the selectivity. Selectivity in chromatography can be altered by changes in mobile phase (eg eluent type, eluent strength) or through changes in stationary phase. Temperature has been used in altering the selectivity of particularly in reversed phase liquid chromatography and ion exchange chromatography. Present paper describe the retention behaviour of alkali metals, alkaline earth metals and transition metal ions on a silica based carboxylate function group containing analyte column. Alkali metals, alkaline earth metals and transition metal ions were detected by ion conductivity and UV-VIS detectors respectively

  12. Insulator-metal transition of fluid molecular hydrogen

    International Nuclear Information System (INIS)

    Ross, M.

    1996-01-01

    Dynamically compressed fluid hydrogen shows evidence for metallization at the relatively low pressure of 140 GPa (1.4 Mbar) while experiments on solid hydrogen made in a diamond-anvil cell have failed to detect any evidence for gap closure up to a pressure of 230 GPa (2.3 Mbar). Two possible mechanisms for metal- liclike resistivity are put forward. The first is that as a consequence of the large thermal disorder in the fluid (kT∼0.2 endash 0.3 eV) short-range molecular interactions lead to band tailing that extends the band edge into the gap, resulting in closure at a lower pressure than in the solid. The second mechanism argues that molecular dissociation creates H atoms that behave similar to n-type donors in a heavily doped semiconductor and undergo a nonmetal-metal Mott-type transition. copyright 1996 The American Physical Society

  13. Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Takami, Hidefumi; Kanki, Teruo, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp; Tanaka, Hidekazu, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2016-06-15

    We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  14. Low temperature intermediate band metallic behavior in Ti implanted Si

    Energy Technology Data Exchange (ETDEWEB)

    Olea, Javier, E-mail: oleaariza@fis.ucm.es; Pastor, David; Garcia-Hemme, Eric; Garcia-Hernansanz, Rodrigo; Prado, Alvaro del; Martil, Ignacio; Gonzalez-Diaz, German

    2012-08-31

    Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10{sup 14}-10{sup 16} cm{sup -2} range. Results of the sample implanted with the 10{sup 16} cm{sup -2} dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices. - Highlights: Black-Right-Pointing-Pointer We fabricated high dose Ti implanted Si samples for intermediate band research. Black-Right-Pointing-Pointer We measured the electronic transport properties in the 7-300 K range. Black-Right-Pointing-Pointer We show an insulator to metallic transition when the intermediate band is formed. Black-Right-Pointing-Pointer The intermediate band is semi-filled and populated by holes. Black-Right-Pointing-Pointer We satisfactorily explain the electrical behavior by an intermediate band model.

  15. Reduction of the Jahn-Teller distortion at the insulator-to-metal transition in mixed valence manganites

    International Nuclear Information System (INIS)

    Garcia-Munoz, J.L.; Suaaidi, M.; Fontcuberta, J.; Rodriguez-Carvajal, J.

    1997-01-01

    The insulator-to-metal transition in the manganite La 0.52 Y 0.15 Ca 0.33 MnO 3 (T IM ∼115 K) has been studied by high-resolution neutron powder diffraction. The cell volume contraction at the Curie point is accompanied by a remarkable decrease of the Jahn-Teller distortion in MnO 6 octahedra. The change of the Mn-O bond lengths at T IM is anisotropic and brings about a drop out of the basal-plane collective distortion mode Q 2 , proposed to be the deformation responsible for the band split of e g↑ orbitals. This is consistent with the double-exchange picture, and precludes simple ferromagnetic exchange. copyright 1997 The American Physical Society

  16. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M. [Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  17. Band gap tuning in transition metal oxides by site-specific substitution

    Science.gov (United States)

    Lee, Ho Nyung; Chisholm, Jr., Matthew F; Jellison, Jr., Gerald Earle; Singh, David J; Choi, Woo Seok

    2013-12-24

    A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected form the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO.sub.3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less of 4.5 eV.

  18. Disorder and conductivity of organic metal

    International Nuclear Information System (INIS)

    Bouffard, Serge

    1982-02-01

    At high temperature, quasi-one-dimensional organic conductors are metallic; at low temperature, the electron gas instabilities drive either a metal to insulator transition or a metal to superconductor transition. Precursors of these 3-D ordering could be appear at higher temperature. A study of the effects of irradiation induced defects on a few organic complexes has shown that defects are produced by radiolitic process. Their concentration can be easily deduced from resistivity measurement at room temperature. In the metallic state, the defects act as strong potentials which break the conducting chains and force the electron to jump to the neighbourg stack. The defects produce a mixing between longitudinal and transverse conductivities. While, it is the 3-D effect of the defects which pins the charge density waves and thus the 3-D ordering can not be acheived: the metal to insulator transition is destroyed, the metallic state is stabilized. In the same time, the fluctuative conductivity is suppress. The superconducting regime has been found to be extremely sensitive to irradiation induced defects. Thus we can demonstrate that the 1-D superconducting fluctuations contribute to the conductivity and that the transition temperature is correlated to the 3-D superconducting fluctuations. [fr

  19. Universal scheme to generate metal–insulator transition in disordered systems

    International Nuclear Information System (INIS)

    Guo, Ai-Min; Xiong, Shi-Jie; Xie, X C; Sun, Qing-feng

    2013-01-01

    We propose a scheme to generate metal–insulator transition in the random binary layer (RBL) model, which is constructed by randomly assigning two types of layers along the longitudinal direction. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended states could appear in the quasi-one-dimensional RBLs and the systems behave as metals by properly tuning the model parameters, due to the existence of a completely ordered subband, leading to a metal–insulator transition in parameter space. Furthermore, the extended states are irrespective of the diagonal and off-diagonal disorder strengths. Our results can be generalized to two- and three-dimensional disordered systems with arbitrary layer structures, and may be realized in Bose–Einstein condensates. (paper)

  20. Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

    Science.gov (United States)

    Kohno, Masanori

    2018-04-01

    A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

  1. Intermetallic and electrical insulator coatings on high-temperature alloys in liquid-lithium environments

    International Nuclear Information System (INIS)

    Park, J.H.

    1994-06-01

    In the design of liquid-metal cooling systems for fusion-reactor blanket, applications, the corrosion resistance of structural materials and the magnetohydrodynamic (MHD) force and its subsequent influence on thermal hydraulics and corrosion are major concerns. When the system is cooled by liquid metals, insulator coatings are required on piping surfaces in contact with the coolant. The objective of this study is to develop stable corrosion-resistant electrical insulator coatings at the liquid-metal/structural-material interface, with emphasis on electrically insulating coatings that prevent adverse MHD-generated currents from passing through the structural wall, and Be-V intermetallic coatings for first-wall components that face the plasma. Vanadium and V-base alloys are leading candidate materials for structural applications in a fusion reactor. Various intermetallic films were produced on V-alloys and on Types 304 and 316 stainless steel. The intermetallic layers were developed by exposure of the materials to liquid Li containing 2 at temperatures of 500--1030 degree C. CaO electrical insulator coatings were produced by reaction of the oxygen-rich layer with <5 at. % Ca dissolved in liquid Li at 400--700 degree C. The reaction converted the oxygen-rich layer to an electrically insulating film. This coating method is applicable to reactor components because the liquid metal can be used over and over; only the solute within the liquid metal is consumed. This paper will discuss initial results on the nature of the coatings and their in-situ electrical resistivity characteristics in liquid Li at high temperatures

  2. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  3. Anomalous Insulator-Metal Transition in Boron Nitride-Graphene Hybrid Atomic Layers

    Science.gov (United States)

    2012-08-13

    Juan de la Cierva” pro- gram (JCI-2010-08156), Spanish MICINN (FIS2010-21282- C02-01 and PIB2010US-00652), ACI-Promociona (ACI2009- 1036), “ Grupos ...percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains. REPORT...Tallahassee, Florida 32310, USA 3Nano-Bio Spectroscopy Group and ETSF Scientific Development Centre, Departamento de Fı́sica de Materiales, Centro de Fı́sica

  4. Trends in low-temperature water–gas shift reactivity on transition metals

    DEFF Research Database (Denmark)

    Schumacher, Nana Maria Pii; Boisen, Astrid; Dahl, Søren

    2005-01-01

    Low-temperature water–gas shift reactivity trends on transition metals were investigated with the use of a microkinetic model based on a redox mechanism. It is established that the adsorption energies for carbon monoxide and oxygen can describe to a large extent changes in the remaining activation...

  5. Signatures of exciton condensation in a transition metal dichalcogenide

    Science.gov (United States)

    Kogar, Anshul; Rak, Melinda S.; Vig, Sean; Husain, Ali A.; Flicker, Felix; Joe, Young Il; Venema, Luc; MacDougall, Greg J.; Chiang, Tai C.; Fradkin, Eduardo; van Wezel, Jasper; Abbamonte, Peter

    2017-12-01

    Bose condensation has shaped our understanding of macroscopic quantum phenomena, having been realized in superconductors, atomic gases, and liquid helium. Excitons are bosons that have been predicted to condense into either a superfluid or an insulating electronic crystal. Using the recently developed technique of momentum-resolved electron energy-loss spectroscopy (M-EELS), we studied electronic collective modes in the transition metal dichalcogenide semimetal 1T-TiSe2. Near the phase-transition temperature (190 kelvin), the energy of the electronic mode fell to zero at nonzero momentum, indicating dynamical slowing of plasma fluctuations and crystallization of the valence electrons into an exciton condensate. Our study provides compelling evidence for exciton condensation in a three-dimensional solid and establishes M-EELS as a versatile technique sensitive to valence band excitations in quantum materials.

  6. Hartree-Fock study of the Anderson metal-insulator transition in the presence of Coulomb interaction: Two types of mobility edges and their multifractal scaling exponents

    Science.gov (United States)

    Lee, Hyun-Jung; Kim, Ki-Seok

    2018-04-01

    We investigate the role of Coulomb interaction in the multifractality of Anderson metal-insulator transition, where the Coulomb interaction is treated within the Hartree-Fock approximation, but disorder effects are taken into account exactly. An innovative technical aspect in our simulation is to utilize the Ewald-sum technique, which allows us to introduce the long-range nature of the Coulomb interaction into Hartree-Fock self-consistent equations of order parameters more accurately. This numerical simulation reproduces the Altshuler-Aronov correction in a metallic state and the Efros-Shklovskii pseudogap in an insulating phase, where the density of states ρ (ω ) is evaluated in three dimensions. Approaching the quantum critical point of a metal-insulator transition from either the metallic or insulting phase, we find that the density of states is given by ρ (ω ) ˜|ω| 1 /2 , which determines one critical exponent of the McMillan-Shklovskii scaling theory. Our main result is to evaluate the eigenfunction multifractal scaling exponent αq, given by the Legendre transformation of the fractal dimension τq, which characterizes the scaling behavior of the inverse participation ratio with respect to the system size L . Our multifractal analysis leads us to identify two kinds of mobility edges, one of which occurs near the Fermi energy and the other of which appears at a high energy, where the density of states at the Fermi energy shows the Coulomb-gap feature. We observe that the multifractal exponent at the high-energy mobility edge remains to be almost identical to that of the Anderson localization transition in the absence of Coulomb interactions. On the other hand, we find that the multifractal exponent near the Fermi energy is more enhanced than that at the high-energy mobility edge, suspected to result from interaction effects. However, both the multifractal exponents do not change even if the strength of the Coulomb interaction varies. We also show that the

  7. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  8. Synthesis of one-dimensional metal-containing insulated molecular wire with versatile properties directed toward molecular electronics materials.

    Science.gov (United States)

    Masai, Hiroshi; Terao, Jun; Seki, Shu; Nakashima, Shigeto; Kiguchi, Manabu; Okoshi, Kento; Fujihara, Tetsuaki; Tsuji, Yasushi

    2014-02-05

    We report, herein, the design, synthesis, and properties of new materials directed toward molecular electronics. A transition metal-containing insulated molecular wire was synthesized through the coordination polymerization of a Ru(II) porphyrin with an insulated bridging ligand of well-defined structure. The wire displayed not only high linearity and rigidity, but also high intramolecular charge mobility. Owing to the unique properties of the coordination bond, the interconversion between the monomer and polymer states was realized under a carbon monoxide atmosphere or UV irradiation. The results demonstrated a high potential of the metal-containing insulated molecular wire for applications in molecular electronics.

  9. Organic superconductors with high transition temperatures and high critical magnetic fields

    International Nuclear Information System (INIS)

    Wolf, A.A.; Halpern, E.H.

    1976-01-01

    Organic compounds exhibit superconducting-like behavior, as to magnetic and electrical properties, at elevated temperatures above 21 0 K, where 21 0 K is the transition temperature of most known metallic superconducting materials. The structure of the organic materials according to this invention is a plurality of superconducting clusters, forming islands within a matrix of insulating material. The ratio of the clusters to the matrix material is a minimum at 1 : 10 4 . The organic compound comprises two distinct atomic groups termed an R group and COOM group combining as R-COOM with the COOM group clustering to form superconducting islands, within the R material matrix. 15 claims, 6 figures

  10. Optical study on metal-insulator change in PrFe4P12 under high pressure

    International Nuclear Information System (INIS)

    Irizawa, Akinori; Sato, Kazuyuki; Kobayashi, Masayo; Nanba, Takao; Matsunami, Masaharu; Sugawara, Hitoshi; Sato, Hideyuki

    2007-01-01

    The optical study has been performed on filled-skutterudite PrFe 4 P 12 applying pressure up to 16 GPa. The reflectivity at far-infrared (FIR) region showed that the metallic reflectivity looses its intensity and the weak phonon peaks at ambient pressure become prominent with pressures at lower temperature. It insists that the electronic states near Fermi level in this compound changes drastically from metallic properties to insulating ones at high pressures and low temperatures, and the insulating phase persists up to 16 GPa against the electrical resistivity data under pressure

  11. Topotactic Metal-Insulator Transition in Epitaxial SrFeO x Thin Films

    International Nuclear Information System (INIS)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong

    2017-01-01

    Multivalent transition metal oxides provide fascinating and rich physics related to oxygen stoichiometry. In particular, the adoptability of various valence states of transition metals enables perovskite oxides to display mixed (oxygen) ionic and electronic conduction and catalytic activity useful in many practical applications, including solid-oxide fuel cells (SOFCs), rechargeable batteries, gas sensors, and memristive devices. For proper realization of the ionic conduction and catalytic activity, it is essential to understand the reversible oxidation and reduction process, which is governed by oxygen storage/release steps in oxides. Topotactic phase transformation facilitates the redox process in perovskites with specific oxygen vacancy ordering by largely varying the oxygen concentration of a material without losing the lattice framework. The concentration and diffusion of oxide ions (O 2– ), the valence state of the transition metal cations, and the thermodynamic structural integrity together provide fundamental understanding and ways to explicitly control the redox reaction.[6] In addition, it offers an attractive route for tuning the emergent physical properties of transition metal oxides, via strong coupling between the crystal lattice and electronic structure.

  12. A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure

    Science.gov (United States)

    Butrouna, Kamal

    There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI, whereas the isostructural BaRuO3 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of SOI in the iridate. This dissertation thoroughly examines a wide array of newly observed novel phenomena induced by adjusting the relative strengths of SOI and U via a systematic chemical substitution of the Ru4+(4d 4) ions for Ir4+(5d5) ions in BaIrO3, i.e., in high quality single crystals of BaIr1--x RuxO3(0.0 ≤ x ≤ 1.0). Our investigation of structural, magnetic, transport and thermal properties reveals that Ru substitution directly rebalances the competing energies so profoundly that it generates a rich phase diagram for BaIr 1--xRuxO 3 featuring two major effects: (1) Light Ru doping (0 ≤ x ≤ 0.15) prompts a simultaneous and precipitous drop in both the magnetic ordering temperature TC and the electrical resistivity, which exhibits metal-insulator transition at around TC. (2) Heavier Ru doping (0.41 ≤ x ≤ 0.82) induces a robust metallic and spin frustration state. For comparison and contrast, we also substituted Rh4+(4d 5) ions for Ir4+(5d5) ions in BaIrO3, i.e. in BaIr1--xRhxO 3(0.0 ≤ x ≤ 0.1), where Rh only reduces the SOI, but without altering the band filling. Hence, this system remains tuned at the Mott instability and is very susceptible to disorder scattering which gives rise to Anderson localization. KEYWORDS: spin-orbit interaction, heavy transition metal oxides

  13. Thermal insulation

    International Nuclear Information System (INIS)

    Aspden, G.J.; Howard, R.S.

    1988-01-01

    The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

  14. Novel phase transitions in B-site doped manganites

    International Nuclear Information System (INIS)

    Popovic, Z.V.; Cantarero, A.; Thijssen, W.H.A.; Paunovic, N.; Dohcevic-Mitrovic, Z.; Sapina, F.

    2005-01-01

    We have examined the infrared reflectivity and the electrical resistivity of La 1- x [Sr(Ba)] x Mn 1- z [Cu(Zn)] z O 3 samples in ferromagnetic metallic and insulator regime. Several phase transitions are observed, the most obvious being the transition from a ferromagnetic metallic to a ferromagnetic insulator phase that is related to the formation of short-range orbitally ordered domains. The temperature T 1 of the phase transition is dependent on doping concentration and for optimally doped samples (∼32% of Mn 4+ ions) we have found T 1 ∼0.93 T C

  15. Polymorphic crystallization of metal-metalloid-glasses above the glass transition temperature

    International Nuclear Information System (INIS)

    Koster, U.; Schunemann, U.; Stephenson, G.B.; Brauer, S.; Sutton, M.

    1992-01-01

    Crystallization of metal-metalloid glasses is known to proceed by nucleation and growth processes. Using crystallization statistics in partially crystallized glasses, at temperatures below the glass transition temperature, time-dependent heterogeneous nucleation has been found to occur at a number of quenched-in nucleation sites. Close to the glass transition temperature crystallization proceeds so rapidly that partially crystallized microstructures could not be obtained. Initial results form fully crystallized glasses exhibit evidence for a transient homogeneous nucleation process at higher temperatures. These conclusions are derived post mortem. At there may be some change of the microstructure after crystallization is finished or during he subsequent quenching, it is desirable to directly obtain information during the early stages of crystallization. Recently reported work by Sutton et al. showed that structural changes can be observed in situ during crystallization by time-resolved x-ray diffraction on time scales as short as milliseconds. The aim o the paper is to present the authors study of the crystallization behavior at temperatures near the glass transition by in-situ x-ray diffraction studies and by microstructural analysis after rapid heating experiments. The results are compared to those derived from a computer model of the crystallization process

  16. Reliability of the one-crossing approximation in describing the Mott transition

    Science.gov (United States)

    Vildosola, V.; Pourovskii, L. V.; Manuel, L. O.; Roura-Bas, P.

    2015-12-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed.

  17. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations

    International Nuclear Information System (INIS)

    Pagnon, V.

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that's incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity [fr

  18. Quantum magnetotransport properties of ultrathin topological insulator films

    KAUST Repository

    Tahir, M.

    2013-01-30

    We study the quantum magnetotransport in ultrathin topological insulator films in an external magnetic field considering hybridization between the upper and lower surfaces of the film. We investigate the two possible mechanisms for splitting of Landau levels, Zeeman and hybridization effects, and show that their interplay leads to minima in the collisional and Hall conductivities with a metal-to-insulator phase transition at the charge neutrality point. Hall plateaus arise at unusual multiples of e2/h . Evidence of a quantum phase transition for the zeroth and splitting of the higher Landau levels is found from the temperature and magnetic field dependences of the transport.

  19. Quantum magnetotransport properties of ultrathin topological insulator films

    KAUST Repository

    Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo

    2013-01-01

    We study the quantum magnetotransport in ultrathin topological insulator films in an external magnetic field considering hybridization between the upper and lower surfaces of the film. We investigate the two possible mechanisms for splitting of Landau levels, Zeeman and hybridization effects, and show that their interplay leads to minima in the collisional and Hall conductivities with a metal-to-insulator phase transition at the charge neutrality point. Hall plateaus arise at unusual multiples of e2/h . Evidence of a quantum phase transition for the zeroth and splitting of the higher Landau levels is found from the temperature and magnetic field dependences of the transport.

  20. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations; Etude de la transition resistive sur des composes supraconducteurs a haute temperature critique le role des fluctuations

    Energy Technology Data Exchange (ETDEWEB)

    Pagnon, V

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that`s incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity.

  1. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  2. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    International Nuclear Information System (INIS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-01-01

    The layered compound BaCo 1−x Ni x S 2−y (0.05  1−x Ni x S 2−y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one

  3. Ultrashort hybrid metal-insulator plasmonic directional coupler.

    Science.gov (United States)

    Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed

    2013-11-01

    An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.

  4. Influence of the disorder in doped germanium changed by compensation on the critical indices of the metal-insulator transition

    International Nuclear Information System (INIS)

    Rentzsch, R.; Reich, Ch.; Ionov, A.N.; Ginodman, V.; Slimak, I.; Fozooni, P.; Lea, M.J.

    1999-01-01

    We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of meso- and macroscopy inhomogeneity caused by the disorder of acceptors and donors in the crystals. By using the isotopic and engineering and the neutron transmutation doping of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν = 1/2 and ξ = 1, which double for medium compensations (at K = 39 and 54%) to ν 1 and ξ = 2, respectively

  5. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  6. Electron dynamics in films made of transition metal nanograins embedded in SiO[sub 2]: Infrared reflectivity and nanoplasma infrared resonance

    KAUST Repository

    Massa, Néstor E.

    2009-06-04

    We report on near normal infrared reflectivityspectra of ∼550 nm thick films made of cosputtered transition metal nanograins and SiO2 in a wide range of metal fractions. Co0.85(SiO2)0.15,with conductivity well above the percolation threshold has a frequency and temperature behavior according to what it is find in conductingmetal oxides. The electron scattering rate displays a unique relaxation time characteristic of single type of carriers experiencing strong electron-phonon interactions. Using small polaron fits we identify those phonons as glass vibrational modes. Ni0.61(SiO2)0.39, with a metal fraction closer to the percolation threshold, undergoes a metal-nonmetal transition at ∼77 K. Here, as it is suggested by the scattering rate nearly quadratic dependence, we broadly identify two relaxation times (two carrier contributions) associated to a Drude mode and a midinfrared overdamped band, respectively. Disorder induced, the midinfrared contribution drives the phase transition by thermal electron localization. Co0.51(SiO2)0.49 has the reflectivity of an insulator with a distinctive band at ∼1450 cm−1 originating in electron promotion, localization, and defect induced polaron formation. Angle dependent oblique reflectivity of globally insulating Co0.38(SiO2)0.62, Fe0.34(SiO2)0.66, and Ni0.28(SiO2)0.72, reveals a remarkable resonance at that band threshold. We understand this as due to the excitation by normal to the film electric fields of defect localized electrons in the metallic nanoparticles. At higher oblique angles, this localized nanoplasma couples to SiO2 longitudinal optical Berreman phonons resulting in band peak softening reminiscent to the phonon behavior undergoing strong electron-phonon interactions. Singular to a globally insulating phase, we believe that this resonance might be a useful tool for tracking metal-insulator phase transitions in inhomogeneous materials.

  7. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  8. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wangoh, L.; Quackenbush, N. F. [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Marley, P. M.; Banerjee, S. [Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States); Sallis, S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  9. Infrared plasmonic nano-lasers based on Metal Insulator Metal waveguides

    NARCIS (Netherlands)

    Hill, M.T.

    2010-01-01

    We will present our latest results on metal-insulator-metal waveguide devices, in particular reducing the dimensions of devices and distributed feedback lasers. Also we will examine potential useful applications for metal nano-lasers.

  10. Insulating Behavior in Graphene with Irradiation-induced Lattice Defects

    Science.gov (United States)

    Chen, Jian-Hao; Williams, Ellen; Fuhrer, Michael

    2010-03-01

    We irradiated cleaned graphene on silicon dioxide in ultra-high vacuum with low energy inert gas ions to produce lattice defects [1], and investigated in detail the transition from metallic to insulating temperature dependence of the conductivity as a function of defect density. We measured the low field magnetoresistance and temperature-dependent resistivity in situ and find that weak localization can only account for a small correction of the resistivity increase with decreasing temperature. We will discuss possible origins of the insulating temperature dependent resistivity in defected graphene in light of our recent experiments. [4pt] [1] Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, PRL 102, 236805 (2009)

  11. Charging damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

  12. Novel phase transitions in B-site doped manganites

    Energy Technology Data Exchange (ETDEWEB)

    Popovic, Z.V. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro)]. E-mail: zoran.popovic@phy.bg.ac.yu; Cantarero, A. [Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia (Spain); Thijssen, W.H.A. [Kamerlingh Onnes Laboratorium, Leiden University, Postbus 9504, 2300 RA Leiden (Netherlands); Paunovic, N. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro); Dohcevic-Mitrovic, Z. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro); Sapina, F. [Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia (Spain)

    2005-04-30

    We have examined the infrared reflectivity and the electrical resistivity of La{sub 1-} {sub x} [Sr(Ba)] {sub x} Mn{sub 1-} {sub z} [Cu(Zn)] {sub z} O{sub 3} samples in ferromagnetic metallic and insulator regime. Several phase transitions are observed, the most obvious being the transition from a ferromagnetic metallic to a ferromagnetic insulator phase that is related to the formation of short-range orbitally ordered domains. The temperature T {sub 1} of the phase transition is dependent on doping concentration and for optimally doped samples ({approx}32% of Mn{sup 4+} ions) we have found T {sub 1}{approx}0.93 T {sub C}.

  13. Reliability of the one-crossing approximation in describing the Mott transition

    International Nuclear Information System (INIS)

    Vildosola, V; Roura-Bas, P; Pourovskii, L V; Manuel, L O

    2015-01-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal–insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed. (paper)

  14. Spin crossover and Mott—Hubbard transition under high pressure and high temperature in the low mantle of the Earth

    Science.gov (United States)

    Ovchinnikov, S. G.; Ovchinnikova, T. M.; Plotkin, V. V.; Dyad'kov, P. G.

    2015-11-01

    Effect of high pressure induced spin crossover on the magnetic, electronic and structural properties of the minerals forming the Earth's low mantle is discussed. The low temperature P, T phase diagram of ferropericlase has the quantum phase transition point Pc = 56 GPa at T = 0 confirmed recently by the synchrotron Mössbauer spectroscopy. The LDA+GTB calculated phase diagram describes the experimental data. Its extension to the high temperature resulted earlier in prediction of the metallic properties of the Earth's mantle at the depth 1400 km insulator transition and compare them with the experimental seismic and geomagnetic field data.

  15. Plasma damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  16. Plasma Damage in Floating Metal-Insulator-Metal Capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; Backer, E.; Coppens, P.

    2001-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  17. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  18. Using microtherm microporous insulation in smelter applications

    Science.gov (United States)

    MacKenzie, Iain

    2000-02-01

    Microtherm is effective in reducing shell temperatures in confined spaces where compression is severe and much insulation is required. This material can prove beneficial for applications such as cement and lime rotary kiln transition and hot zones; copper converters and anode furnaces; steel and iron ladles, tundishes, RH vessels, and blast furnaces; and aluminum filter boxes, runners, and metal transporters.

  19. Sharp superconductor-insulator transition in short wires

    International Nuclear Information System (INIS)

    Meidan, Dganit; Oreg, Yuval; Refael, Gil; Smith, Robert A.

    2008-01-01

    Recent experiments on short MoGe nanowires show a sharp superconductor-insulator transition tuned by the normal state resistance of the wire, with a critical resistance of R c ∼ R Q = h/(4e 2 ). These results are at odds with a broad range of theoretical work on Josephson-like systems that predicts a smooth transition, tuned by the value of the resistance that shunts the junction. We develop a self-consistent renormalization group treatment of interacting phase-slips and their dual counterparts, correlated cooper pair tunneling, beyond the dilute approximation. This analysis leads to a very sharp transition with a critical resistance of R Q . The addition of the quasi-particles' resistance at finite temperature leads to a quantitative agreement with the experimental results. This self-consistent renormalization group method should also be applicable to other physical systems that can be mapped onto similar sine-Gordon models, in the previously inaccessible intermediate-coupling regime

  20. Effets dimensionnels dans un système désordonné au voisinage des transitions métal-isolant et supraconducteur-isolant

    OpenAIRE

    Marrache-Kikuchi , Claire

    2006-01-01

    Low temperature transport in disordered conducting materials imply quantum interference, Coulomb repulsion, and superconducting fluctuations. Since 2D is the lower critical dimension for the existence of metallic and superconducting states, we have studied two quantum phase transitions - the Superconductor-to-Insulator Transition (SIT) and the Metal-to-Insulator Transition (MIT) - when the thickness of a disordered system - here a-NbSi - is lowered. The underlying problem is the transition be...

  1. Metallic insulation transport and strainer clogging tests

    International Nuclear Information System (INIS)

    Hyvaerinen, J.; Hongisto, O.

    1994-06-01

    Experiments to probe the transport and clogging properties of metallic (metal reflective) insulation have been carried out in order to provide data for evaluation of their influence on the emergency core cooling and containment spray systems of the Finnish boiling water reactors in the event of a design basis accident. The specific metallic insulation tested was DARMET, provided by Darchem Engineering Ltd. The inner foils of Darmet are dimped. Available literature on the metallic insulation performance under design basis accident conditions has been reviewed. On the basis of the review a parametric approach has been chosen for the transport and clogging experiments. This approach involves testing a wide size range of various shapes of foil pieces. Five sets of experiments have been carried out. The first three sets investigate transport properties of the foil pieces, starting from sedimentation in stagnant waste pool and proceeding to transport in horizontal and vertically circulating flows. The clogging experiments have been addressed the differential pressures obtained due to accumulation of both pure and metallic and a mixture of metallic and fibrous (mineral wool) depris. (4 refs., 24 figs., 2 tabs.)

  2. Disorder-induced transitions in resonantly driven Floquet topological insulators

    Science.gov (United States)

    Titum, Paraj; Lindner, Netanel H.; Refael, Gil

    2017-08-01

    We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction bands. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet topological Anderson insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

  3. On effective holographic Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2016-12-20

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  4. On effective holographic Mott insulators

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2016-01-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  5. Evidence for photo-induced monoclinic metallic VO2 under high pressure

    International Nuclear Information System (INIS)

    Hsieh, Wen-Pin; Mao, Wendy L.; Trigo, Mariano; Reis, David A.; Andrea Artioli, Gianluca; Malavasi, Lorenzo

    2014-01-01

    We combine ultrafast pump-probe spectroscopy with a diamond-anvil cell to decouple the insulator-metal electronic transition from the lattice symmetry changing structural transition in the archetypal strongly correlated material vanadium dioxide. Coherent phonon spectroscopy enables tracking of the photo-excited phonon vibrational frequencies of the low temperature, monoclinic (M 1 )-insulating phase that transforms into the metallic, tetragonal rutile structured phase at high temperature or via non-thermal photo-excitations. We find that in contrast with ambient pressure experiments where strong photo-excitation promptly induces the electronic transition along with changes in the lattice symmetry, at high pressure, the coherent phonons of the monoclinic (M 1 ) phase are still clearly observed upon the photo-driven phase transition to a metallic state. These results demonstrate the possibility of synthesizing and studying transient phases under extreme conditions

  6. Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

    International Nuclear Information System (INIS)

    Visser, A de; Ponomarenko, L A; Galistu, G; Lang, D T N de; Pruisken, A M M; Zeitler, U; Maude, D

    2006-01-01

    High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity ρ xx near the critical filling factor ν c ∼ 0.5 follows the universal scaling law ρ xx (ν, T) ∝ exp(-Δν/(T/T 0 ) κ ), where Δν = ν-ν c . The critical exponent κ equals 0.56 ± 0.02, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class

  7. Calculation of the magnetic anisotropy energy and finite-temperature magnetic properties of transition-metal films

    International Nuclear Information System (INIS)

    Garibay-Alonso, R; Villasenor-Gonzalez, P; Dorantes-Davila, J; Pastor, G M

    2004-01-01

    The magnetic anisotropy energy at the interface (IMAE) of Co films deposited on the Pd(111) surface are determined in the framework of a self-consistent, real-space tight-binding method at zero temperature. Significant spin moments are induced at the Pd atoms at the interface which have an important influence on the observed reorientation transitions as a function of Co film thickness. Film-substrate hybridizations are therefore crucial for the magneto-anisotropic behaviour of thin transition-metal films deposited on metallic non-magnetic substrates. Furthermore, using a real-space recursive expansion of the local Green function and within the virtual-crystal approximation we calculate the magnetization curves and the Curie temperature T C for free-standing Fe films

  8. Thermal-performance study of liquid metal fast breeder reactor insulation

    International Nuclear Information System (INIS)

    Shiu, K.K.

    1980-09-01

    Three types of metallic thermal insulation were investigated analytically and experimentally: multilayer reflective plates, multilayer honeycomb composite, and multilayer screens. Each type was subjected to evacuated and nonevacuated conditions, where thermal measurements were made to determine thermal-physical characteristics. A variation of the separation distance between adjacent reflective plates of multilayer reflective plates and multilayer screen insulation was also experimentally studied to reveal its significance. One configuration of the multilayer screen insulation was further selected to be examined in sodium and sodium oxide environments. The emissivity of Type 304 stainless steel used in comprising the insulation was measured by employing infrared technology. A comprehensive model was developed to describe the different proposed types of thermal insulation. Various modes of heat transfer inherent in each type of insulation were addressed and their relative importance compared. Provision was also made in the model to allow accurate simulation of possible sodium and sodium oxide contamination of the insulation. The thermal-radiation contribution to heat transfer in the temperature range of interest for LMFBR's was found to be moderate, and the suppression of natural convection within the insulation was vital in preserving its insulating properties. Experimental data were compared with the model and other published results. Moreover, the three proposed test samples were assessed and compared under various conditions as viable LMFBR thermal insulations

  9. Low temperature synthesis, photoluminescence, magnetic properties of the transition metal doped wurtzite ZnS nanowires

    International Nuclear Information System (INIS)

    Cao, Jian; Han, Donglai; Wang, Bingji; Fan, Lin; Fu, Hao; Wei, Maobin; Feng, Bo; Liu, Xiaoyan; Yang, Jinghai

    2013-01-01

    In this paper, we synthesized the transition metal ions (Mn, Cu, Fe) doped and co-doped ZnS nanowires (NWs) by a one-step hydrothermal method. The results showed that the solid solubility of the Fe 2+ ions in the ZnS NWs was about two times larger than that of the Mn 2+ or Cu 2+ ions in the ZnS NWs. There was no phase transformation from hexagonal to cubic even in a large quantity transition metal ions introduced for all the samples. The Mn 2+ /Cu 2+ /Fe 2+ related emission peaks can be observed in the Mn 2+ ,Cu 2+ and Fe 2+ doped ZnS NWs. The ferromagnetic properties of the co-doped samples were investigated at room temperature. - graphical abstract: The stable wurtzite ZnS:TM 2+ (TM=Mn, Cu, Fe) nanowires with room temperature ferromagnetism properties were obtained. The different elongation of unit cell caused by the different doped ions was observed. Highlights: ► The transition metal ions doped wurtzite ZnS nanowires were synthesized at 180 °C. ► There was no phase transformation from hexagonal to cubic even in a large quantity introduced for all the samples. ► The room temperature ferromagnetism properties of the co-doped nanowires were investigated

  10. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  11. Effect of moisture on the electrical performance of transition-joints for medium voltage paper-insulated cables; Elektrische Beeintraechtigung durch Feuchtigkeit an oelgetraenkten Isolierpapieren. Mittelspannungsuebergangsmuffen

    Energy Technology Data Exchange (ETDEWEB)

    Cardinaels, Jos [Nexans Network Solution, Erembodegem (Belgium). Produktentwicklung; Baesch, Manfred [Nexans Power Accessories Germany, Dortmund (Germany). Produkt- und Qualitaetsmanagement

    2009-06-15

    Paper-insulated cables are constructed with an impervious metallic outer jacket in order to protect them against ingress of moisture. On 'modern' transition-joints to XLPE-insulated cables, this metal barrier is interrupted, hence, a risk of moisture penetration exists. This text presents measurements of water-vapour permeability of used materials and discusses the results of ageing tests. (orig.)

  12. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    Directory of Open Access Journals (Sweden)

    Tetiana Slusar

    2016-02-01

    Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  13. Room-Temperature Synthesis of Transition Metal Clusters and Main Group Polycations from Ionic Liquids

    OpenAIRE

    Ahmed, Ejaz

    2011-01-01

    Main group polycations and transition metal clusters had traditionally been synthesized via high-temperature routes by performing reactions in melts or by CTR, at room-temperature or lower temperature by using so-called superacid solvents, and at room-temperature in benzene–GaX3 media. Considering the major problems associated with higher temperature routes (e.g. long annealing time, risk of product decomposition, and low yield) and taking into account the toxicity of benzene and liquid SO2 i...

  14. Evidence for photo-induced monoclinic metallic VO{sub 2} under high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Hsieh, Wen-Pin, E-mail: wphsieh@stanford.edu; Mao, Wendy L. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Geological and Environmental Sciences, Stanford University, Stanford, California 94305 (United States); Trigo, Mariano [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Reis, David A. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Photon Science and Applied Physics, Stanford University, Stanford, California 94305 (United States); Andrea Artioli, Gianluca; Malavasi, Lorenzo [Dipartimento di Chimica, Sezione di Chimica Fisica, INSTM (UdR Pavia), Università di Pavia, Viale Taramelli 16, 27100 Pavia (Italy)

    2014-01-13

    We combine ultrafast pump-probe spectroscopy with a diamond-anvil cell to decouple the insulator-metal electronic transition from the lattice symmetry changing structural transition in the archetypal strongly correlated material vanadium dioxide. Coherent phonon spectroscopy enables tracking of the photo-excited phonon vibrational frequencies of the low temperature, monoclinic (M{sub 1})-insulating phase that transforms into the metallic, tetragonal rutile structured phase at high temperature or via non-thermal photo-excitations. We find that in contrast with ambient pressure experiments where strong photo-excitation promptly induces the electronic transition along with changes in the lattice symmetry, at high pressure, the coherent phonons of the monoclinic (M{sub 1}) phase are still clearly observed upon the photo-driven phase transition to a metallic state. These results demonstrate the possibility of synthesizing and studying transient phases under extreme conditions.

  15. Development of insulating coatings for liquid metal blankets

    International Nuclear Information System (INIS)

    Malang, S.; Borgstedt, H.U.; Farnum, E.H.; Natesan, K.; Vitkovski, I.V.

    1994-07-01

    It is shown that self-cooled liquid metal blankets are feasible only with electrically insulating coatings at the duct walls. The requirements on the insulation properties are estimated by simple analytical models. Candidate insulator materials are selected based on insulating properties and thermodynamic consideration. Different fabrication technologies for insulating coatings are described. The status of the knowledge on the most crucial feasibility issue, the degradation of the resisivity under irradiation, is reviewed

  16. Metal non-metal transitions in doped semiconductors

    International Nuclear Information System (INIS)

    Brezini, A.

    1989-12-01

    A disordered Hubbard model with diagonal disorder is used to examine the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared with other theories. In particular two regimes are observed; when the electron-electron interaction U is greater than the disorder parameter and when is smaller. Furthermore the effect of including conduction-band minima into the calculation of metal-insulator transitions in doped Si and Ge is investigated with use of Berggren approach. Good agreement with experiments are found when both disorder and interactions are included. (author). 37 refs, 7 figs, 3 tabs

  17. Synchronous γ (Co60) photons and thermal processing induced insulator metal transition in amorphous chalcogenide As4Se3Te3 composition

    Science.gov (United States)

    El-Sayed, S. A.; Morsy, M. A.

    2018-05-01

    Amorphous chalcogenide composition AS4Se3Te3 is prepared by conventional quenching technique. The separate annealing or γ quanta irradiation not effect on the dc conductivity properties of the prepared composition. When the prepared samples are subjected to simultaneous annealing at temperature 413 K and γ quanta irradiation the dc conductivity increases. The dark dc conductivity increases by increasing the time of exposure to γ irradiation. At irradiation dose 1.47 × 104 Gy the dc conductivity starts to have metallic like conductivity character. These samples could be used as high temperature γ quanta dosimeter. By applying scaling theory on the samples irradiated with different dose of γ irradiation the critical exponents are determined and found to be temperature tends to zero. The steric value is low in the insulator side of conductivity, but high and almost saturated in the metallic side of conductivity.

  18. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  19. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  20. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  1. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  2. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  3. Heat and Mass Transfer in a High-Porous Low-Temperature Thermal Insulation in Real Operating Conditions

    Directory of Open Access Journals (Sweden)

    Polovnikov Vyacheslav Yu.

    2015-01-01

    Full Text Available The results of numerical simulation of heat and mass transfer in a high-porous low-temperature insulation in conditions of insulation freezing, a moisture migration to the front of phase transition and a condensation forming on an outer contour of interaction were obtained. Values of heat leakage were established.

  4. Imaging Nanometer Phase Coexistence at Defects During the Insulator-Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography.

    Science.gov (United States)

    Vidas, Luciana; Günther, Christian M; Miller, Timothy A; Pfau, Bastian; Perez-Salinas, Daniel; Martínez, Elías; Schneider, Michael; Gührs, Erik; Gargiani, Pierluigi; Valvidares, Manuel; Marvel, Robert E; Hallman, Kent A; Haglund, Richard F; Eisebitt, Stefan; Wall, Simon

    2018-05-18

    We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO 2 , and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.

  5. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  6. Study of transition metal oxides by photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Rao, C.N.R.; Sarma, D.D.; Vasudevan, S.; Hegde, M.S.

    1979-01-01

    Systematics in the X-ray photoelectron spectra (X.p.e.s.) of Ti, V, Cr, Mn and Nb oxides with the metal ion in different oxidation states as well as of related series of mono-, sesqui- and di-oxides of the first row of transition metals have been investigated in detail. Core level binding energies, spin-orbit splittings and exchange splittings are found to exhibit interesting variations with the oxidation state of the metal or the nuclear charge. The 3d binding energies of the monoxides show a proportionality to Goodenough's (R - RC). Other aspects of interest in the study are the satellite structure and final state effects in the X.p.e.s. of the oxides, and identification of different valence states in oxides of the general formulae Mn02n-1 and M304. The nature of changes in the 3d bands of oxides undergoing metal-insulator transitions is also indicated. (author)

  7. Selective and low temperature transition metal intercalation in layered tellurides

    Science.gov (United States)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  8. Phase transition temperatures of 405-725 K in superfluid ultra-dense hydrogen clusters on metal surfaces

    International Nuclear Information System (INIS)

    Holmlid, Leif; Kotzias, Bernhard

    2016-01-01

    Ultra-dense hydrogen H(0) with its typical H-H bond distance of 2.3 pm is superfluid at room temperature as expected for quantum fluids. It also shows a Meissner effect at room temperature, which indicates that a transition point to a non-superfluid state should exist above room temperature. This transition point is given by a disappearance of the superfluid long-chain clusters H_2_N(0). This transition point is now measured for several metal carrier surfaces at 405 - 725 K, using both ultra-dense protium p(0) and deuterium D(0). Clusters of ordinary Rydberg matter H(l) as well as small symmetric clusters H_4(0) and H_3(0) (which do not give a superfluid or superconductive phase) all still exist on the surface at high temperature. This shows directly that desorption or diffusion processes do not remove the long superfluid H_2_N(0) clusters. The two ultra-dense forms p(0) and D(0) have different transition temperatures under otherwise identical conditions. The transition point for p(0) is higher in temperature, which is unexpected.

  9. Insulator-to-Proton-Conductor Transition in a Dense Metal-Organic Framework.

    Science.gov (United States)

    Tominaka, Satoshi; Coudert, François-Xavier; Dao, Thang D; Nagao, Tadaaki; Cheetham, Anthony K

    2015-05-27

    Metal-organic frameworks (MOFs) are prone to exhibit phase transitions under stimuli such as changes in pressure, temperature, or gas sorption because of their flexible and responsive structures. Here we report that a dense MOF, ((CH3)2NH2)2[Li2Zr(C2O4)4], exhibits an abrupt increase in proton conductivity from topotactic hydration (H2O/Zr = 0.5), wherein one-fourth of the Li ions are irreversibly rearranged and coordinated by water molecules. This structure further transforms into a third crystalline structure by water uptake (H2O/Zr = 4.0). The abrupt increase in conductivity is reversible and is associated with the latter reversible structure transformation. The H2O molecules coordinated to Li ions, which are formed in the first step of the transformation, are considered to be the proton source, and the absorbed water molecules, which are formed in the second step, are considered to be proton carriers.

  10. Microscopic effects of Dy doping in the topological insulator Bi2Te3

    Science.gov (United States)

    Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

    2018-05-01

    Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

  11. Observation of a Slater-type metal-to-insulator transition in Sr$_2$IrO$_4$ from time-resolved photo-carrier dynamics

    OpenAIRE

    Hsieh, D.; Mahmood, F.; Torchinsky, D. H.; Cao, G.; Gedik, N.

    2012-01-01

    We perform a time-resolved optical study of Sr$_2$IrO$_4$ to understand the influence of magnetic ordering on the low energy electronic structure of a strongly spin-orbit coupled $J_{eff}$=1/2 Mott insulator. By studying the recovery dynamics of photo-carriers excited across the Mott gap, we find that upon cooling through the N\\'{e}el temperature $T_N$ the system evolves continuously from a metal-like phase with fast ($\\sim$50 fs) and excitation density independent relaxation dynamics to a ga...

  12. High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

  13. Impurities in Antiferromagnetic Transition-Metal Oxides - Symmetry and Optical Transitions

    Science.gov (United States)

    Petersen, John Emil, III

    considered. For example, simple rock-salt transition-metal oxides are quite different from the high temperature superconducting cuprates. A range of materials is studied here, in order to gain a greater understanding of optical transitions in highly-correlated systems. In this work, O vacancies are introduced in NiO, along with Fe impurities, to understand better the band filling in the insulating behavior observed experimentally. These results are compared with those of La2NiO4, La2CuO4, La2-xSr xNiO4, and La2-xSrxCuO4. to elucidate the mechanisms behind the symmetry breaking phenomena in the Sr doped systems. As it turns out, indeed, the x2 - y2 orbital in these materials plays a critical role in spatial charge distribution, magnetic, and spin densities which are coupled to the dopant position in the lattice. The in-depth study of electronic and optical properties of transition-metal oxides presented here provides theoretical characterization of the infamous pseudogap in the cuprates - one of the greatest mysteries of modern solid state physics. In addition, via Density Functional Perturbation Theory, the phonon coupling with charge-density wave is explored in La2-xSr xNiO4 and found to be the dominant contributing factor to the colossal dielectric constant.

  14. Mass fractionation processes of transition metal isotopes

    Science.gov (United States)

    Zhu, X. K.; Guo, Y.; Williams, R. J. P.; O'Nions, R. K.; Matthews, A.; Belshaw, N. S.; Canters, G. W.; de Waal, E. C.; Weser, U.; Burgess, B. K.; Salvato, B.

    2002-06-01

    Recent advances in mass spectrometry make it possible to utilise isotope variations of transition metals to address some important issues in solar system and biological sciences. Realisation of the potential offered by these new isotope systems however requires an adequate understanding of the factors controlling their isotope fractionation. Here we show the results of a broadly based study on copper and iron isotope fractionation during various inorganic and biological processes. These results demonstrate that: (1) naturally occurring inorganic processes can fractionate Fe isotope to a detectable level even at temperature ˜1000°C, which challenges the previous view that Fe isotope variations in natural system are unique biosignatures; (2) multiple-step equilibrium processes at low temperatures may cause large mass fractionation of transition metal isotopes even when the fractionation per single step is small; (3) oxidation-reduction is an importation controlling factor of isotope fractionation of transition metal elements with multiple valences, which opens a wide range of applications of these new isotope systems, ranging from metal-silicate fractionation in the solar system to uptake pathways of these elements in biological systems; (4) organisms incorporate lighter isotopes of transition metals preferentially, and transition metal isotope fractionation occurs stepwise along their pathways within biological systems during their uptake.

  15. Temperature-dependent electrical property transition of graphene oxide paper

    International Nuclear Information System (INIS)

    Huang Xingyi; Jiang Pingkai; Zhi Chunyi; Golberg, Dmitri; Bando, Yoshio; Tanaka, Toshikatsu

    2012-01-01

    Reduction of graphene oxide is primarily important because different reduction methods may result in graphene with totally different properties. For systematically exploring the reduction of graphene oxide, studies of the temperature-dependent electrical properties of graphene oxide (GO) are urgently required. In this work, for the first time, broadband dielectric spectroscopy was used to carry out an in situ investigation on the transition of the electrical properties of GO paper from −40 to 150 °C. The results clearly reveal a very interesting four-stage transition of electrical properties of GO paper with increasing temperature: insulator below 10 °C (stage 1), semiconductor at between 10 and 90 °C (stage 2), insulator at between 90 and 100 °C (stage 3), and semiconductor again at above 100 °C (stage 4). Subsequently, the transition mechanism was discussed in combination with detailed dielectric properties, microstructure and thermogravimetric analyses. It is suggested that the temperature-dependent transition of electronic properties of GO is closely associated with the ion mobility, water molecules removal and the reduction of GO in the GO paper. Most importantly, the present work clearly demonstrates the reduction of GO paper starts at above 100 °C. (paper)

  16. Thermochemistry of some binary lead and transition metal compounds by high temperature direct synthesis calorimetry

    Energy Technology Data Exchange (ETDEWEB)

    Meschel, S.V., E-mail: meschel@jfi.uchicago.edu [Illinois Institute of Technology,Thermal Processing Technology Center, 10 W. 32nd Street, Chicago, Illinois 60615 (United States); Gordon Center for Integrated Science, 929 E. 57th Street, Chicago, Illinois 60637 (United States); Nash, P. [Illinois Institute of Technology,Thermal Processing Technology Center, 10 W. 32nd Street, Chicago, Illinois 60615 (United States); Chen, X.Q.; Wei, P. [Materials processing Modeling Division, Shenyang National Laboratory for Materials Science, Institute of Metals Research, 72 Wenhua Road, Shenyang City (China)

    2015-06-05

    Highlights: • Studied binary lead-transition metal alloys by high temperature calorimetry. • Determined the enthalpies of formation of 8 alloys. • Compared the measurements with predictions by the model of Miedema and by the ab initio method. - Abstract: The standard enthalpies of formation of some binary lead and transition metal compounds have been measured by high temperature direct synthesis calorimetry. The reported results are: Pb{sub 3}Sc{sub 5}(−61.3 ± 2.9); PbTi{sub 4}(−16.6 ± 2.4); Pb{sub 3}Y{sub 5}(−64.8 ± 3.6); Pb{sub 3}Zr{sub 5}(−50.6 ± 3.1); PbNb{sub 3}(−10.4 ± 3.4); PbRh(−16.5 ± 3.3); PbPd{sub 3}(−29.6 ± 3.1); PbPt(−34.7 ± 3.3) kJ/mole of atoms. We will compare our results with previously published measurements. We will also compare the experimental measurements with enthalpies of formation of transition metal compounds with elements in the same vertical column in the periodic table. We will compare our measurements with predicted values on the basis of the semi empirical model of Miedema and coworkers and with ab initio values when available.

  17. Uniaxial pressure-induced half-metallic ferromagnetic phase transition in LaMnO3

    Science.gov (United States)

    Rivero, Pablo; Meunier, Vincent; Shelton, William

    2016-03-01

    We use first-principles theory to predict that the application of uniaxial compressive strain leads to a transition from an antiferromagnetic insulator to a ferromagnetic half-metal phase in LaMnO3. We identify the Q2 Jahn-Teller mode as the primary mechanism that drives the transition, indicating that this mode can be used to tune the lattice, charge, and spin coupling. Applying ≃6 GPa of uniaxial pressure along the [010] direction activates the transition to a half-metallic pseudocubic state. The half-metallicity opens the possibility of producing colossal magnetoresistance in the stoichiometric LaMnO3 compound at significantly lower pressure compared to recently observed investigations using hydrostatic pressure.

  18. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-01-01

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

  19. Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

    International Nuclear Information System (INIS)

    Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V.

    2008-01-01

    The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition

  20. The effect of transition metals additions on the temperature coefficient of linear expansion of titanium and vanadium

    International Nuclear Information System (INIS)

    Lesnaya, M.I.; Volokitin, G.G.; Kashchuk, V.A.

    1976-01-01

    Results are reported of an experimental research into the influence of small additions of α-transition metals on the temperature coefficient of linear expansion of titanium and vanadium. Using the configuration model of substance as the basis, expeained are the lowering of the critical liquefaction temperature or the melting point of vanadium and the raising of it, as caused by the addition of metals of the 6 group of the periodic chart and by the addition of metals of the 8 group, respectively, and also a shift in the temperature of the polymorphic α-β-transformation of titanium. Suggested as the best alloying metal for vanadium are tungsten and tantalum; for titaniums is vanadium whose admixtures lower the melting point and shift the polymorphic transformation temperature by as much as 100 to 120 degrees

  1. Finite-temperature second-order many-body perturbation and Hartree–Fock theories for one-dimensional solids: An application to Peierls and charge-density-wave transitions in conjugated polymers

    International Nuclear Information System (INIS)

    He, Xiao; Ryu, Shinsei; Hirata, So

    2014-01-01

    Finite-temperature extensions of ab initio Gaussian-basis-set spin-restricted Hartree–Fock (HF) and second-order many-body perturbation (MP2) theories are implemented for infinitely extended, periodic, one-dimensional solids and applied to the Peierls and charge-density-wave (CDW) transitions in polyyne and all-trans polyacetylene. The HF theory predicts insulating CDW ground states for both systems in their equidistant structures at low temperatures. In the same structures, they turn metallic at high temperatures. Starting from the “dimerized” low-temperature equilibrium structures, the systems need even higher temperatures to undergo a Peierls transition, which is accompanied by geometric as well as electronic distortions from dimerized to non-dimerized forms. The conventional finite-temperature MP2 theory shows a sign of divergence in any phase at any nonzero temperature and is useless. The renormalized finite-temperature MP2 (MP2R) theory is divergent only near metallic electronic structures, but is well behaved elsewhere. MP2R also predicts CDW and Peierls transitions occurring at two different temperatures. The effect of electron correlation is primarily to lower the Peierls transition temperature

  2. Thermophysical data for various transition metals at high temperatures obtained by a submicrosecond-pulse-heating method

    International Nuclear Information System (INIS)

    Seydel, U.; Bauhof, H.; Fucke, W.; Wadle, H.

    1979-01-01

    Thermophysical data for several transition metals are reported including enthalpies, electric resistivities, and specific volumes at the melting transition, and volume expansion coefficients and heat capacities in the liquid phase. Values for the critical temperatures, pressures, and volumes are given for molybdenum and tungsten. All data have been obtained by a submicrosecond-pulse-heating method. (author)

  3. Phase transition temperatures of 405-725 K in superfluid ultra-dense hydrogen clusters on metal surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Holmlid, Leif, E-mail: holmlid@chem.gu.se [Atmospheric Science, Department of Chemistry, University of Gothenburg, SE-412 96 Göteborg (Sweden); Kotzias, Bernhard [Airbus DS, Department Mechanical Engineering, D28199 Bremen (Germany)

    2016-04-15

    Ultra-dense hydrogen H(0) with its typical H-H bond distance of 2.3 pm is superfluid at room temperature as expected for quantum fluids. It also shows a Meissner effect at room temperature, which indicates that a transition point to a non-superfluid state should exist above room temperature. This transition point is given by a disappearance of the superfluid long-chain clusters H{sub 2N}(0). This transition point is now measured for several metal carrier surfaces at 405 - 725 K, using both ultra-dense protium p(0) and deuterium D(0). Clusters of ordinary Rydberg matter H(l) as well as small symmetric clusters H{sub 4}(0) and H{sub 3}(0) (which do not give a superfluid or superconductive phase) all still exist on the surface at high temperature. This shows directly that desorption or diffusion processes do not remove the long superfluid H{sub 2N}(0) clusters. The two ultra-dense forms p(0) and D(0) have different transition temperatures under otherwise identical conditions. The transition point for p(0) is higher in temperature, which is unexpected.

  4. Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

    Science.gov (United States)

    Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

    2018-05-09

    The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3

  5. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  6. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  7. Some characteristics of metal migration in or on the surface of insulators

    International Nuclear Information System (INIS)

    Shields, R.B.

    1978-03-01

    This report reviews the migration of metals, principally silver, in or on the surface of insulating materials, by electrolytic processes. These processes are described for various metals, insulating materials and physical conditions, with numerous examples from the literature. While it is concluded that the only sure way to prevent degradation of insulation due to metal migration is to avoid the use of migration-prone metals, some other measures are mentioned which have been reported to reduce the extent of the growth. (author)

  8. Filling-driven Mott transition in SU(N ) Hubbard models

    Science.gov (United States)

    Lee, Seung-Sup B.; von Delft, Jan; Weichselbaum, Andreas

    2018-04-01

    We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU (N ) Fermi-Hubbard models, using the dynamical mean-field theory and the numerical renormalization group as its impurity solver. The compressibility shows a striking temperature dependence: near the critical end-point temperature, it is strongly enhanced in the metallic phase close to the insulating phase. We demonstrate that this compressibility enhancement is associated with the thermal suppression of the quasiparticle peak in the local spectral functions. We also explain that the asymmetric shape of the quasiparticle peak originates from the asymmetry in the dynamics of the generalized doublons and holons.

  9. Pressure induced insulator–metal transition and giant negative piezoresistance in Pr{sub 0.6}Ca{sub 0.4}Mn{sub 0.96}Al{sub 0.04}O{sub 3} polycrystal

    Energy Technology Data Exchange (ETDEWEB)

    Arumugam, S., E-mail: sarumugam1963@yahoo.com [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirapalli 620024, Tamil Nadu (India); Thiyagarajan, R. [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Kalaiselvan, G.; Sivaprakash, P. [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirapalli 620024, Tamil Nadu (India)

    2016-11-01

    The effect of external hydrostatic pressure (P) on the magnetization (M) and resistivity (ρ) properties of charge-orbital (CO) ordered-insulating phase-separated manganite Pr{sub 0.6}Ca{sub 0.4}Mn{sub 0.96}Al{sub 0.04}O{sub 3} system is reported here. At ambient P, CO ordering transition and spin-canting in the AFM are observed at 223 K and 55 K respectively in M(T) and ρ(T) measurements. Application of P increases simultaneously the magnitude of magnetization (M) and transition temperature, and weakens the CO ordering in M(T) measurements up to 0.98 GPa. During ρ(T) measurements, P induces an insulator–metallic transition (T{sub IM}) at 1.02 GPa, and further increase of P up to 2.84 GPa leads to increase of T{sub IM} (dT{sub IM}/dP =21.6 K/GPa). ρ at T{sub IM} is reduced about three orders of magnitude at 2.84 GPa, and leads to the giant negative piezoresistance (~98%). These results are analyzed separately in two temperature regions i.e., below and above T{sub IM} by power function equation and small polaronic hopping model respectively. It is understood from these analyses that the application of P suppresses the Jahn–Teller distortions, electron–electron and electron–magnon scattering factors, and induces the insulator–metal transition in Pr{sub 0.6}Ca{sub 0.4}Mn{sub 0.96}Al{sub 0.04}O{sub 3} system. - Highlights: • Application of P on Pr{sub 0.6}Ca{sub 0.4}Mn{sub 0.96}Al{sub 0.04}O{sub 3} reduces resistivity (ρ) remarkably at low-temperatures, and exhibits an insulator to metallic transition at 1.02 GPa. • The reduction in ρ by P is about three orders of magnitude at 2.84 GPa, leads to the giant negative piezoresistance about 98%. • The effect of the suppression of Jahn–Teller distortions, electron–electron and electron–magnon scattering under an applied P exhibits to the metal-Insulator transition. • The phase-separation in this system has been tuned by both internal and external perturbations.

  10. Strong-Superstrong Transition in Glass Transition of Metallic Glass

    International Nuclear Information System (INIS)

    Dan, Wang; Hong-Yan, Peng; Xiao-Yu, Xu; Bao-Ling, Chen; Chun-Lei, Wu; Min-Hua, Sun

    2010-01-01

    Dynamic fragility of bulk metallic glass (BMG) of Zr 64 Cu 16 Ni 10 Al 10 alloy is studied by three-point beam bending methods. The fragility parameter mfor Zr 64 Cu 16 Ni 10 Al 10 BMG is calculated to be 24.5 at high temperature, which means that the liquid is a 'strong' liquid, while to be 13.4 at low temperature which means that the liquid is a 'super-strong' liquid. The dynamical behavior of Zr 64 Cu 16 Ni 10 Al 10 BMG in the supercooled region undergoes a strong to super-strong transition. To our knowledge, it is the first time that a strong-to-superstrong transition is found in the metallic glass. Using small angle x-ray scattering experiments, we find that this transition is assumed to be related to a phase separation process in supercooled liquid. (condensed matter: structure, mechanical and thermal properties)

  11. Thermodynamic properties of bcc crystals at high temperatures: The transition metals

    International Nuclear Information System (INIS)

    MacDonald, R.A.; Shukla, R.C.

    1985-01-01

    The second-neighbor central-force model of a bcc crystal, previously used in lowest-order anharmonic perturbation theory to calculate the thermodynamic properties of the alkali metals, is here applied to the transition metals V, Nb, Ta, Mo, and W. The limitations of the model are apparent in the thermal-expansion results, which fall away from the experimental trend above about 1800 K. The specific heat similarly fails to exhibit the sharp rise that is observed at higher temperatures. A static treatment of vacancies cannot account for the difference between theory and experiment. The electrons have been taken into account by using a model that specifically includes d-band effects in the electron ground-state energy. The results thus obtained for the bulk moduli are quite satisfactory. In the light of these results, we discuss the prerequisites for a better treatment of metals when the electrons play an important role in determining the thermodynamic properties

  12. Nuclear spin-lattice relaxation in n -type insulating and metallic GaAs single crystals

    Science.gov (United States)

    Lu, J.; Hoch, M. J. R.; Kuhns, P. L.; Moulton, W. G.; Gan, Z.; Reyes, A. P.

    2006-09-01

    The coupling of electron and nuclear spins in n-GaAs changes significantly as the donor concentration n increases through the insulator-metal critical concentration nC˜1.2×1016cm-3 . The present measurements of the Ga71 relaxation rates W made as a function of magnetic field (1-13T) and temperature (1.5-300K) for semi-insulating GaAs and for three doped n-GaAs samples with donor concentrations n=5.9×1015 , 7×1016 , and 2×1018cm-3 , show marked changes in the relaxation behavior with n . Korringa-like relaxation is found in both metallic samples for T30K phonon-induced nuclear quadrupolar relaxation is dominant. The relaxation rate measurements permit determination of the electron probability density at Ga71 sites. A small Knight shift of -3.3ppm was measured on the most metallic (2×1018cm-3) sample using magic-angle spinning at room temperature. For the n=5.9×1015cm-3 sample, a nuclear relaxation model involving the Fermi contact hyperfine interaction, rapid spin diffusion, and exchange coupled local moments is proposed. While the relaxation rate behavior with temperature for the weakly metallic sample, n=7×1016cm-3 , is similar to that found for the just-insulating sample, the magnetic field dependence is quite different. For the 5.9×1015cm-3 sample, increasing the magnetic field leads to a decrease in the relaxation rate, while for the 7×1016cm-3 sample this results in an increase in the relaxation rate ascribed to an increase in the density of states at the Fermi level as the Landau level degeneracy is increased.

  13. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  14. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  15. Direct Fabrication of Inkjet-Printed Dielectric Film for Metal-Insulator-Metal Capacitors

    Science.gov (United States)

    Cho, Cheng-Lin; Kao, Hsuan-ling; Wu, Yung-Hsien; Chang, Li-Chun; Cheng, Chun-Hu

    2018-01-01

    In this study, an inkjet-printed dielectric film that used a polymer-based SU-8 ink was fabricated for use in a metal-insulator-metal (MIM) capacitor. Thermal treatment of the inkjet-printed SU-8 polymer film affected its surface morphology, chemical structure, and surface wettability. A 20-min soft-bake at 60°C was applied to eliminate inkjet-printed bubbles and ripples. The ultraviolet-exposed SU-8 polymer film was crosslinked at temperatures between 120°C and 220°C and became disordered at 270°C, demonstrated using Fourier-transform infrared spectroscopy. A maximum SU-8 polymer film hard-bake temperature of 120°C was identified, and a printing process was subsequently employed because the appropriate water contact angle of the printed film was 79°. Under the appropriate inkjet printing conditions, the two-transmission-line method was used to extract the dielectric and electrical properties of the SU-8 polymer film, and the electrical behavior of the fabricated MIM capacitor was also characterized.

  16. Features of order-disorder phase transformation in nonstoichiometric transition metals carbides

    International Nuclear Information System (INIS)

    Emel'yanov, A.N.

    1996-01-01

    Measurements of temperature and electric conductivity of nonstoichiometric transition metals carbides TiC χ and NbC χ in the area of order-disorder phase transformation are carried out. There are certain peculiarities on the temperature and electric conductivity curves of the carbides, connected with the carbon sublattice disordering. On the basis of the anomalies observed on the curves of the temperature conductivity of nonstoichiometric carbides of transition metals above the temperature of the order-disorder transition the existence of the second structural transition is supposed

  17. Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

    Science.gov (United States)

    Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

    2018-04-01

    Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

  18. Role of entropy and structural parameters in the spin-state transition of LaCoO3

    Science.gov (United States)

    Chakrabarti, Bismayan; Birol, Turan; Haule, Kristjan

    2017-11-01

    The spin-state transition in LaCoO3 has eluded description for decades despite concerted theoretical and experimental effort. In this study, we approach this problem using fully charge self-consistent density functional theory + embedded dynamical mean field theory (DFT+DMFT). We show from first principles that LaCoO3 cannot be described by a single, pure spin state at any temperature. Instead, we observe a gradual change in the population of higher-spin multiplets with increasing temperature, with the high-spin multiplets being excited at the onset of the spin-state transition followed by the intermediate-spin multiplets being excited at the metal-insulator-transition temperature. We explicitly elucidate the critical role of lattice expansion and oxygen octahedral rotations in the spin-state transition. We also reproduce, from first principles, that the spin-state transition and the metal-insulator transition in LaCoO3 occur at different temperature scales. In addition, our results shed light on the importance of electronic entropy in driving the spin-state transition, which has so far been ignored in all first-principles studies of this material.

  19. Superconductivity in inhomogeneous granular metals

    International Nuclear Information System (INIS)

    McLean, W.L.

    1980-01-01

    A model of elongated metal ellipsoids imbedded in a granular metal is treated by an effective medium approach to explain the observed temperature dependence of the normal-state conductivity of superconducting granular aluminum. Josephson tunneling is thus still required to account for the superconductivity. The model predicts the same kind of contrasting behavior on opposite sides of the metal-insulator transition as is found in the recent scaling treatment of Anderson localization

  20. Pressure effect on magnetic and insulator-metal transition of La.sub.0.67./sub.Pb.sub.0.33./sub.Mn.sub.0.9./sub.Co.sub.0.1./sub.O.sub.2.97./sub. ceramic

    Czech Academy of Sciences Publication Activity Database

    Mihalik, M.; Zentková, M.; Antoňák, M.; Arnold, Zdeněk; Kamarád, Jiří; Skorokhod, Yuriy; Gritzner, G.; Kiss, L. F.

    2012-01-01

    Roč. 32, č. 1 (2012), s. 145-149 ISSN 0895-7959. [Conference of the European High Pressure Research Group (EHPRG) /49./. Budapest, 28.08.2011-02.09.2011] Grant - others:VEGA(SK) 2/0057/27 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetic transition: insulator-metal transition * hydrostatic pressure * manganite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.901, year: 2012 www.tandfonline.com

  1. Phase transition study in strongly correlated VO{sub 2} based sensing systems

    Energy Technology Data Exchange (ETDEWEB)

    Simo, A., E-mail: alinesimo.aline@gmail.com [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Kaviyarasu, K. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Mwakikunga, B. [Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Madjoe, R. [Physics Department, University of Western Cape, 7535 Belville Cape Town (South Africa); Gibaud, A. [Laboratoire de Physique de l’Etat Condensé, Université du Maine Faculte des sciences, UPRESA 6087, 72085, Le Mans Cedex 9 (France); Maaza, M. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa)

    2017-04-15

    Highlights: • At 230 °C for about 48 h to prepare successfully VO{sub 2} nanobelts. • 1D shows good sensing performance due to the large active surface of the material. • The good selectivity of methanol compared to acetone and isopropanol. • VOC compounds was observed at room temperature. - Abstract: Intermediate phase monoclinic M2 was observed by inducing in situ X-ray thermo diffraction on VO{sub 2} (M) nanoplatelets. The solid-solid phase transition occurs at around 65 °C assisted with the percolative transition metal-insulator. The existence of an intermediate crystalline phase with room temperature insulator phase and high temperature metallic phase across MIT in VO{sub 2} could be of relevance to understand structural contributions to the phase transition dynamics. In addition, pellet of VO{sub 2} nanostructures have shown to present good sensing properties to various alcohols vapors at room temperature and good selectivity of methanol with 5.54% sensitivity and limit detection below 5 ppm, compared to isopropanol 3.2% and acetone 2.4% respectively.

  2. Quantum anomalous Hall effect and topological phase transition in two-dimensional antiferromagnetic Chern insulator NiOsCl6

    Science.gov (United States)

    Yang, Wei-Wei; Li, Lei; Zhao, Jing-Sheng; Liu, Xiao-Xiong; Deng, Jian-Bo; Tao, Xiao-Ma; Hu, Xian-Ru

    2018-05-01

    By doing calculations based on density functional theory, we predict that the two-dimensional anti-ferromagnetic (AFM) NiOsCl6 as a Chern insulator can realize the quantum anomalous Hall (QAH) effect. We investigate the magnetocrystalline anisotropy energies in different magnetic configurations and the Néel AFM configuration is proved to be ground state. When considering spin–orbit coupling (SOC), this layered material with spins perpendicular to the plane shows properties as a Chern insulator characterized by an inversion band structure and a nonzero Chern number. The nontrivial band gap is 37 meV and the Chern number C  =  ‑1, which are induced by a strong SOC and AFM order. With strong SOC, the NiOsCl6 system performs a continuous topological phase transition from the Chern insulator to the trivial insulator upon the increasing Coulomb repulsion U. The critical U c is indicated as 0.23 eV, at which the system is in a metallic phase with . Upon increasing U, the E g reduces linearly with C  =  ‑1 for 0    U c . At last we analysis the QAH properties and this continuous topological phase transition theoretically in a two-band model. This AFM Chern insulator NiOsCl6 proposes not only a promising way to realize the QAH effect, but also a new material to study the continuous topological phase transition.

  3. Theory of the transition temperature of superconducting amorphous transition metals

    International Nuclear Information System (INIS)

    Zwicknagel, G.

    1979-11-01

    In the present paper first the transition temperature Tsub(c) is shown to be a local quantity, which depends on the (average) short range order, and second it is demonstrated how to calculate local electronic properties in the framework of a short range order model and the transition temperature of amorphous systems based on accepted structure models of the amorphous state. In chapter I the theoretical basis of this work is presented in brief. The model used to study the role of short range order (in periodically ordered as well as in disordered system) is described in chapter II. The results of this model for the periodically ordered case are compared in chapter III with band structure calculations. In chapter IV it is shown how to establish short range order models for disordered systems and what kind of information can be obtained with respect to the electronic properties. Finally in chapter V it is discussed to what extend the interpretation of the transition temperature Tsub(c) as being determined by short range order effects can be supported by the electronic properties, which are calculated in the chapters III and IV. (orig.) [de

  4. Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Ritz, Elvira

    2009-06-04

    At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

  5. Rare-earth metal transition metal borocarbide and nitridoborate superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Niewa, Rainer; Shlyk, Larysa; Blaschkowski, Bjoern [Stuttgart Univ. (Germany). Inst. fuer Anorganische Chemie

    2011-07-01

    Few years after the discovery of superconductivity in high-T{sub c} cuprates, borocarbides and shortly after nitridoborates with reasonably high T{sub c}s up to about 23 K attracted considerable attention. Particularly for the rare-earth metal series with composition RNi{sub 2}[B{sub 2}C] it turned out, that several members exhibit superconductivity next to magnetic order with both T{sub c} above or below the magnetic ordering temperature. Therefore, these compounds have been regarded as ideal materials to study the interplay and coexistence of superconductivity and long range magnetic order, due to their comparably high ordering temperatures and similar magnetic and superconducting condensation energies. This review gathers information on the series RNi{sub 2}[B{sub 2}C] and isostructural compounds with different transition metals substituting Ni as well as related series like RM[BC], RM[BN], AM[BN] and R{sub 3}M{sub 2}[BN]{sub 2}N (all with R = rare-earth metal, A = alkaline-earth metal, M = transition metal) with special focus on synthesis, crystal structures and structural trends in correspondence to physical properties. (orig.)

  6. Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

    2016-02-07

    High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

  7. Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

    Science.gov (United States)

    Sengupta, Parijat; Tan, Yaohua; Klimeck, Gerhard; Shi, Junxia

    2017-10-01

    We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides (TMDCs). In the low temperature regime where heat is carried primarily through transport of electrons, thermal conductivity is linked to electrical conductivity through the Wiedemann-Franz law (WFL). Using a k.p Hamiltonian that describes the K and K{\\prime} valley edges, we compute the zero-frequency electric (Drude) conductivity using the Kubo formula to obtain a numerical estimate for the thermal conductivity. The impurity scattering determined transit time of electrons which enters the Drude expression is evaluated within the self-consistent Born approximation. The analytic expressions derived show that low temperature thermal conductivity (1) is determined by the band gap at the valley edges in monolayer TMDCs and (2) in presence of disorder which can give rise to the variable range hopping regime, there is a distinct reduction. Additionally, we compute the Mott thermopower and demonstrate that under a high frequency light beam, a valley-resolved thermopower can be obtained. A closing summary reviews the implications of results followed by a brief discussion on applicability of the WFL and its breakdown in context of the presented calculations.

  8. Systematic study of metal-insulator-metal diodes with a native oxide

    Science.gov (United States)

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-10-01

    In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  9. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  10. Critical Phenomena of the Disorder Driven Localization-Delocalization Transition

    International Nuclear Information System (INIS)

    Marc Ruehlaender

    2001-01-01

    Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T c superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given

  11. Application of the Finite Elemental Analysis to Modeling Temperature Change of the Vaccine in an Insulated Packaging Container during Transport.

    Science.gov (United States)

    Ge, Changfeng; Cheng, Yujie; Shen, Yan

    2013-01-01

    This study demonstrated an attempt to predict temperatures of a perishable product such as vaccine inside an insulated packaging container during transport through finite element analysis (FEA) modeling. In order to use the standard FEA software for simulation, an equivalent heat conduction coefficient is proposed and calculated to describe the heat transfer of the air trapped inside the insulated packaging container. The three-dimensional, insulated packaging container is regarded as a combination of six panels, and the heat flow at each side panel is a one-dimension diffusion process. The transit-thermal analysis was applied to simulate the heat transition process from ambient environment to inside the container. Field measurements were carried out to collect the temperature during transport, and the collected data were compared to the FEA simulation results. Insulated packaging containers are used to transport temperature-sensitive products such as vaccine and other pharmaceutical products. The container is usually made of an extruded polystyrene foam filled with gel packs. World Health Organization guidelines recommend that all vaccines except oral polio vaccine be distributed in an environment where the temperature ranges between +2 to +8 °C. The primary areas of concern in designing the packaging for vaccine are how much of the foam thickness and gel packs should be used in order to keep the temperature in a desired range, and how to prevent the vaccine from exposure to freezing temperatures. This study uses numerical simulation to predict temperature change within an insulated packaging container in vaccine cold chain. It is our hope that this simulation will provide the vaccine industries with an alternative engineering tool to validate vaccine packaging and project thermal equilibrium within the insulated packaging container.

  12. Metallic and insulating 3d transition-element monoxides and their stability

    International Nuclear Information System (INIS)

    Johansson, H.B.

    1977-01-01

    The binding properties of the 3d monoxides are studied in detail, and it is shown that the metallic character of TiO and VO is directly reflected in their heat of formation. The same holds true for NbO. From a stability analysis of the 3d monoxides versus decomposition, it is found that TiO, VO, and FeO are close to an instability. Further, it can be concluded that both ScO and CrO must be very near existence. The general occurrence of transition-metal monoxides is shown to be directly correlated with ionic properties of the transition elements. An investigation of the absorption edge in the 3d monoxides is also undertaken. The importance of the crystal-field splitting is noticed, and it is shown that the heat of formation of the monoxides can be used to derive the crystal-field parameter Δ. The change from a delocalized to a localized behavior of the d electrons in the 3d monoxides is compared with a similar change of the f electrons in the actinides. Some similarities between these two series of materials are pointed out

  13. A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide

    Directory of Open Access Journals (Sweden)

    Hongyan Yang

    2014-12-01

    Full Text Available We propose a novel metal-coupled metal-insulator-metal (MC-MIM waveguide which can achieve a highly efficient surface plasmon polaritons (SPPs excitation. The MC-MIM waveguide is formed by inserting a thin metal film in the insulator of an MIM. The introduction of the metal film, functioning as an SPPs coupler, provides a space for the interaction between SPPs and a confined electromagnetic field of the intermediate metal surface, which makes energy change and phase transfer in the metal-dielectric interface, due to the joint action of incomplete electrostatic shielding effect and SPPs coupling. Impacts of the metal film with different materials and various thickness on SPPs excitation are investigated. It is shown that the highest efficient SPPs excitation is obtained when the gold film thickness is 60 nm. The effect of refractive index of upper and lower symmetric dielectric layer on SPPs excitation is also discussed. The result shows that the decay value of refractive index is 0.3. Our results indicate that this proposed MC-MIM waveguide may offer great potential in designing a new SPPs source.

  14. Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

    International Nuclear Information System (INIS)

    Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

    2007-01-01

    Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

  15. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    Science.gov (United States)

    Kim, Jong Woung

    Finding a promising material and constructing a new method to have both high energy and power are key issues for future energy storage systems. This dissertation addresses three different materials systems to resolve those issues. Pseudocapacitive materials such as RuO2 and MnO2 display high capacitance but Nb2O5, displays a different charge storage mechanism, one highly dependent on its crystal phase rather than its surface area. Various sol-gel techniques were used to synthesize the different phases of Nb2O5 and electrochemical testing was used to study their charge storage with some phases displaying comparable charge storage to MnO2. To overcome the electrical limitations of using an insulating material, the core-shell structure (Nb2O 5/C) was also examined and the method could be generalized to improve other pseudocapacitors. Besides electronic conductivity, the diffusion of the electrolyte ions through the shell material is a critical factor for fast charging/discharging in the core-shell structure. This dissertation also involves another topic, a reconfigurable electrode, that displays both high energy and power density. By constructing a reconfigurable electrode which has different electrical properties (metallic or insulating state) depending on the amount of intercalated `guest' ions into `host' material, it can be used as a battery or electrochemical capacitor material in the insulating or metallic state respectively. Metal oxide bronzes having metal-insulator transition were investigated in this study.

  16. The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

    2011-01-01

    In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

  17. Spin-transport-phenomena in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias Klaus

    2012-07-19

    Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

  18. Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

    International Nuclear Information System (INIS)

    Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

    2007-01-01

    Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

  19. Theory of quantum metal to superconductor transitions in highly conducting systems

    Energy Technology Data Exchange (ETDEWEB)

    Spivak, B.

    2010-04-06

    We derive the theory of the quantum (zero temperature) superconductor to metal transition in disordered materials when the resistance of the normal metal near criticality is small compared to the quantum of resistivity. This can occur most readily in situations in which 'Anderson's theorem' does not apply. We explicitly study the transition in superconductor-metal composites, in an swave superconducting film in the presence of a magnetic field, and in a low temperature disordered d-wave superconductor. Near the point of the transition, the distribution of the superconducting order parameter is highly inhomogeneous. To describe this situation we employ a procedure which is similar to that introduced by Mott for description of the temperature dependence of the variable range hopping conduction. As the system approaches the point of the transition from the metal to the superconductor, the conductivity of the system diverges, and the Wiedemann-Franz law is violated. In the case of d-wave (or other exotic) superconductors we predict the existence of (at least) two sequential transitions as a function of increasing disorder: a d-wave to s-wave, and then an s-wave to metal transition.

  20. A Seismic Analysis for Reflective Metal Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyuhyung; Kim, Taesoon [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components.

  1. A Seismic Analysis for Reflective Metal Insulation

    International Nuclear Information System (INIS)

    Kim, Kyuhyung; Kim, Taesoon

    2016-01-01

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components

  2. Investigation of size-temperature effects in thin f;.lms of transition metals

    International Nuclear Information System (INIS)

    Loboda, V.B.; Protsenko, I.E.; Smolin, M.D.; Yaremenko, A.V.

    1985-01-01

    The temperature and size dependences are studied for specific rho and temperature coeficients of resistance of transition metal films obtained and annealed in the 10 -6 - 5x10 -7 Pa vacuum. The size dependence of lambda sub(g)(1-p), rho sub(db), R, r and rhosub(db)sup(v) parameters was calculated using the Tellier, Tosser and Pichard theory. The temperature dependence of the conductivity was investigated in the 80-700 K range. A conclusion is made that all differences between dependences rho(T) for thin and bulk samples may be explained by effects specific for films but presenting no class of new physical effects. The size dependence of the electron-phonon interaction near T>THETAsub(D) and proportionality factors in the approximating equation rho approximately Asub(1.2)xTsup(2) is obtained for Ni films

  3. Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

    Science.gov (United States)

    Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

    2017-08-01

    The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

  4. Alkali metal and alkali metal hydroxide intercalates of the layered transition metal disulfides

    International Nuclear Information System (INIS)

    Kanzaki, Y.; Konuma, M.; Matsumoto, O.

    1981-01-01

    The intercalation reaction of some layered transition metal disulfides with alkali metals, alkali metal hydroxides, and tetraalkylammonium hydroxides were investigated. The alkali metal intercalates were prepared in the respective metal-hexamethylphosphoric triamide solutions in vaccuo, and the hydroxide intercalates in aqueous hydroxide solutions. According to the intercalation reaction, the c-lattice parameter was increased, and the increase indicated the expansion of the interlayer distance. In the case of alkali metal intercalates, the expansion of the interlayer distance increased continuously, corresponding to the atomic radius of the alkali metal. On the other hand, the hydroxide intercalates showed discrete expansion corresponding to the effective ionic radius of the intercalated cation. All intercalates of TaS 2 amd NbS 2 were superconductors. The expansion of the interlayer distance tended to increase the superconducting transition temperature in the intercalates of TaS 2 and vice versa in those of NbS 2 . (orig.)

  5. Quasi-continuous transition from a Fermi liquid to a spin liquid in κ-(ET)2Cu2(CN)3.

    Science.gov (United States)

    Furukawa, Tetsuya; Kobashi, Kazuhiko; Kurosaki, Yosuke; Miyagawa, Kazuya; Kanoda, Kazushi

    2018-01-22

    The Mott metal-insulator transition-a manifestation of Coulomb interactions among electrons-is known as a discontinuous transition. Recent theoretical studies, however, suggest that the transition is continuous if the Mott insulator carries a spin liquid with a spinon Fermi surface. Here, we demonstrate the case of a quasi-continuous Mott transition from a Fermi liquid to a spin liquid in an organic triangular-lattice system κ-(ET) 2 Cu 2 (CN) 3 . Transport experiments performed under fine pressure tuning have found that as the Mott transition is approached, the Fermi liquid coherence temperature continuously falls to the scale of kelvins, with a divergent quasi-particle decay rate on the metal side, and the charge gap continuously closes on the insulator side. A Clausius-Clapeyron analysis provides thermodynamic evidence for the extremely weak first-order nature of the transition. These results provide additional support for the existence of a spinon Fermi surface, which becomes an electron Fermi surface when charges are delocalized.

  6. Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

    Directory of Open Access Journals (Sweden)

    Youhei Yamaji

    2014-05-01

    Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

  7. Inverse participation ratio and localization in topological insulator phase transitions

    International Nuclear Information System (INIS)

    Calixto, M; Romera, E

    2015-01-01

    Fluctuations of Hamiltonian eigenfunctions, measured by the inverse participation ratio (IPR), turn out to characterize topological-band insulator transitions occurring in 2D Dirac materials like silicene, which is isostructural with graphene but with a strong spin–orbit interaction. Using monotonic properties of the IPR, as a function of a perpendicular electric field (which provides a tunable band gap), we define topological-like quantum numbers that take different values in the topological-insulator and band-insulator phases. (paper)

  8. Nonmonotonic anisotropy in charge conduction induced by antiferrodistortive transition in metallic SrTiO3

    Science.gov (United States)

    Tao, Qian; Loret, Bastien; Xu, Bin; Yang, Xiaojun; Rischau, Carl Willem; Lin, Xiao; Fauqué, Benoît; Verstraete, Matthieu J.; Behnia, Kamran

    2016-07-01

    Cubic SrTiO3 becomes tetragonal below 105 K. The antiferrodistortive (AFD) distortion leads to clockwise and counterclockwise rotation of adjacent TiO6 octahedra. This insulator becomes a metal upon the introduction of extremely low concentration of n -type dopants. However, signatures of the structural phase transition in charge conduction have remained elusive. Employing the Montgomery technique, we succeed in resolving the anisotropy of charge conductivity induced by the AFD transition, in the presence of different types of dopants. We find that the slight lattice distortion (liquids, the anisotropy has opposite signs for elastic and inelastic scattering. Increasing the concentration of dopants leads to a drastic shift in the temperature of the AFD transition either upward or downward. The latter result puts strong constraints on any hypothetical role played by the AFD soft mode in the formation of Cooper pairs and the emergence of superconductivity in SrTiO3.

  9. Quantum oscillations in insulators with neutral Fermi surfaces

    Science.gov (United States)

    Sodemann, Inti; Chowdhury, Debanjan; Senthil, T.

    2018-02-01

    We develop a theory of quantum oscillations in insulators with an emergent Fermi sea of neutral fermions minimally coupled to an emergent U(1 ) gauge field. As pointed out by Motrunich [Phys. Rev. B 73, 155115 (2006), 10.1103/PhysRevB.73.155115], in the presence of a physical magnetic field the emergent magnetic field develops a nonzero value leading to Landau quantization for the neutral fermions. We focus on the magnetic field and temperature dependence of the analog of the de Haas-van Alphen effect in two and three dimensions. At temperatures above the effective cyclotron energy, the magnetization oscillations behave similarly to those of an ordinary metal, albeit in a field of a strength that differs from the physical magnetic field. At low temperatures, the oscillations evolve into a series of phase transitions. We provide analytical expressions for the amplitude and period of the oscillations in both of these regimes and simple extrapolations that capture well their crossover. We also describe oscillations in the electrical resistivity of these systems that are expected to be superimposed with the activated temperature behavior characteristic of their insulating nature and discuss suitable experimental conditions for the observation of these effects in mixed-valence insulators and triangular lattice organic materials.

  10. The evolution of Griffiths-phase-like features and colossal magnetoresistance in La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27) across the compositional metal-insulator boundary

    International Nuclear Information System (INIS)

    Jiang Wanjun; Zhou Xuezhi; Williams, Gwyn; Mukovskii, Y; Privezentsev, R

    2009-01-01

    Detailed measurements of the magnetic and transport properties of single crystals of La 1-x Ca x MnO 3 (0.18 ≤ x ≤ 0.27) are summarized, and lead to the following conclusions. While temperature-dependent (magneto-) resistance measurements narrow the compositionally modulated metal-insulator (M-I) transition to lie between 0.19 ≤ x c ≤ 0.20 in the series studied, comparisons between the latter magnetic data provide the first unequivocal demonstration that (i) the presence of Griffiths-phase-like (GP) features do not guarantee colossal magnetoresistance (CMR), while confirming (ii) that neither are the appearance of such features a prerequisite for CMR. These data also reveal that (iii) whereas continuous magnetic transitions occur for 0.18 ≤ x ≤ 0.25, the universality class of these transitions belongs to that of a nearest-neighbour 3D Heisenberg model only for x≤0.20, beyond which complications due to GP-like behaviour occur. The implications of the variation (or lack thereof) in critical exponents and particularly critical amplitudes and temperatures across the compositionally mediated M-I transition support the assertion that the dominant mechanism underlying ferromagnetism across the M-I transition changes from ferromagnetic super-exchange (SE) stabilized by orbital ordering in the insulating phase to double-exchange (DE) in the orbitally disordered metallic regime. The variations in the acoustic spin-wave stiffness, D, and the coercive field, H C , support this conclusion. These SE and DE interaction mechanisms are demonstrated to not only belong to the same universality class but are also characterized by comparable coupling strengths. Nevertheless, their percolation thresholds are manifestly different in this system.

  11. Improved Thermal-Insulation Systems for Low Temperatures

    Science.gov (United States)

    Fesmire, James E.; Augustynowicz, Stanislaw D.

    2003-01-01

    Improved thermal-insulation materials and structures and the techniques for manufacturing them are undergoing development for use in low-temperature applications. Examples of low-temperature equipment for which these thermal insulation systems could provide improved energy efficiency include storage tanks for cryogens, superconducting electric-power-transmission equipment, containers for transport of food and other perishable commodities, and cold boxes for low-temperature industrial processes. These systems could also be used to insulate piping used to transfer cryogens and other fluids, such as liquefied natural gas, refrigerants, chilled water, crude oil, or low-pressure steam. The present thermal-insulation systems are layer composites based partly on the older class of thermal-insulation systems denoted generally as multilayer insulation (MLI). A typical MLI structure includes an evacuated jacket, within which many layers of radiation shields are stacked or wrapped close together. Low-thermal-conductivity spacers are typically placed between the reflection layers to keep them from touching. MLI can work very well when a high vacuum level (less than 10(exp-4) torr) is maintained and utmost care is taken during installation, but its thermal performance deteriorates sharply as the pressure in the evacuated space rises into the soft vacuum range [pressures greater than 0.1 torr (greater than 13 Pa)]. In addition, the thermal performance of MLI is extremely sensitive to mechanical compression and edge effects and can easily decrease from one to two orders of magnitude from its ideal value even when the MLI is kept under high vacuum condition. The present thermal-insulation systems are designed to perform well under soft vacuum level, in particular the range of 1 to 10 torr. They are also designed with larger interlayer spacings to reduce vulnerability to compression (and consequent heat leak) caused by installation and use. The superiority of these systems is the

  12. Coupling between crystal structure and magnetism in transition-metal oxides

    Science.gov (United States)

    Barton, Phillip Thomas

    Transition-metal oxides exhibit a fascinating array of phenomena ranging from superconductivity to negative thermal expansion to catalysis. This dissertation focuses on magnetism, which is integral to engineering applications such as data storage, electric motors/generators, and transformers. The investigative approach follows structure-property relationships from materials science and draws on intuition from solid-state chemistry. The interplay between crystal structure and magnetic properties is studied experimentally in order to enhance the understanding of magnetostructural coupling mechanisms and provide insight into avenues for tuning behavior. A combination of diffraction and physical property measurements were used to study structural and magnetic phase transitions as a function of chemical composition, temperature, and magnetic field. The systems examined are of importance in Li-ion battery electrochemistry, condensed-matter physics, solid-state chemistry, and p-type transparent conducting oxides. The materials were prepared by solid-state reaction of powder reagents at high temperatures for periods lasting tens of hours. The first project discussed is of a solid solution between NiO, a correlated insulator, and LiNiO2, a layered battery cathode. Despite the deceptive structural and compositional simplicity of this system, a complete understanding of its complex magnetic properties has remained elusive. This study shows that nanoscale domains of chemical order form at intermediate compositions, creating interfaces between antiferromagnetism and ferrimagnetism that give rise to magnetic exchange bias. A simple model of the magnetism is presented along with a comprehensive phase diagram. The second set of investigations focus on the Ge-Co-O system where the spin-orbit coupling of Co(II) plays a significant role. GeCo2O 4 is reported to exhibit unusual magnetic behavior that arises from Ising spin in its spinel crystal structure. Studies by variable-temperature

  13. Research on thermal insulation for hot gas ducts

    International Nuclear Information System (INIS)

    Broeckerhoff, P.

    1984-01-01

    The inner surfaces of prestressed reactor vessels and hot gas ducts of Gas Cooled High Temperature Reactors need internal thermal insulation to protect the pressure bearing walls from high temperatures. The design parameters of the insulation depend on the reactor type. In a PNP-plant temperature and pressure of the cooling medium helium are proposed to be 950 deg. C and 40 bars, respectively. The experimental work was started at KFA in 1971 for the HHT-project using three test facilities. At first metallic foil insulation and stuffed fibre insulating systems, the hot gas ducting shrouds of which were made of metal, have been tested. Because of the elevated helium temperature in case of PNP and the resulting lower strength of the metallic parts the interest was directed to rigid ceramic materials for the spacers and the inner shrouds. This led to modified structures designed by the INTERATOM company. Tests were performed at KFA. The main object of the investigations was to study the influence of temperature, pressure and axial pressure gradients on the thermal efficiency of the structures. Moreover, the temperatures within the insulation, at the pressure tube, and at the elements which bear the inner shrouds were measured. Thermal fluxes and effective thermal conductivities in axial and circumferential direction of the pressure tube are given, mainly for the INTERATOM-design with spherical spacers. (author)

  14. Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

    KAUST Repository

    Tahir, M.

    2013-04-26

    We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

  15. Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

    KAUST Repository

    Tahir, M.; Manchon, Aurelien; Sabeeh, K.; Schwingenschlö gl, Udo

    2013-01-01

    We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

  16. Hotspot related plasmon assisted multiphoton photocurrents in metal-insulator-metal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Differt, Dominik; Pfeiffer, Walter [Universitaet Bielefeld, Universitaetsstr. 25, 33615 Bielefeld (Germany); Diesing, Detlef [Universitaet Duisburg-Essen, Universitaetsstr. 5, 45117 Essen (Germany)

    2011-07-01

    Scanning photocurrent microscopy of metal-insulator-metal junctions (MIM) is used to investigate the mechanisms of femtosecond multiphoton photocurrent injection at liquid nitrogen temperature. The locally induced multiphoton photocurrent in a Ag-TaO-Ta MIM junction is measured in a scanning microscope cryostat under focused illumination (5{mu}m focus diameter, 800 nm, 30 fs, 80 MHz repetition rate). The intensity dependence reveals a mixture of two-photon and three-photon processes that are responsible for the photocurrent. Its lateral variation shows hotspot-like behaviour with significant magnitude variations on a 100 to 200 nm length scale. Assuming an injection current duration of 40fs the peak injection current density of about 10{sup 4} A cm{sup -2} is estimated - 10{sup 6} times higher than that for 400 nm continuous wave illumination slightly below the damage threshold. The simultaneously measured extinction of the incident radiation reveals a 20 to 30% increased absorption at the hotspots. We attribute the local photocurrent enhancement to the defect-assisted excitation of surface plasmon polaritons at the silver electrode leading to an enhanced local excitation.

  17. Electronic and thermodynamic properties of transition metal elements and compounds

    International Nuclear Information System (INIS)

    Haeglund, J.

    1993-01-01

    This thesis focuses on the use of band-structure calculations for studying thermodynamic properties of solids. We discuss 3d-, 4d- and 5d-transition metal carbides and nitrides. Through a detailed comparison between theoretical and experimental results, we draw conclusions on the character of the atomic bonds in these materials. We show how electronic structure calculations can be used to give accurate predictions for bonding energies. Part of the thesis is devoted to the application of the generalized gradient approximation in electronic structure calculations on transition metals. For structures with vibrational disorder, we present a method for calculating averaged phonon frequencies without using empirical information. For magnetic excitations, we show how a combined use of theoretical results and experimental data can yield information on magnetic fluctuations at high temperatures. The main results in the thesis are: Apart for an almost constant shift, theoretically calculated bonding energies for transition metal carbides and nitrides agree with experimental data or with values from analysis of thermochemical information. The electronic spectrum of transition metal carbides and nitrides can be separated into bonding, antibonding and nonbonding electronic states. The lowest enthalpy of formation for substoichiometric vanadium carbide VC 1-X at zero temperature and pressure occurs for a structure containing vacancies (x not equal to 0). The generalized gradient approximation improves theoretical calculated cohesive energies for 3d-transition metals. Magnetic phase transitions are sensitive to the description of exchange-correlation effects in electronic structure calculations. Trends in Debye temperatures can be successfully analysed in electronic structure calculations on disordered lattices. For the elements, there is a clear dependence on the crystal structure (e.g., bcc, fcc or hcp). Chromium has fluctuating local magnetic moments at temperatures well above

  18. Monitoring on internal temperature of composite insulator with embedding fiber Bragg grating for early diagnosis

    Science.gov (United States)

    Chen, Wen; Tang, Ming

    2017-04-01

    The abnormal temperature rise is the precursor of the defective composite insulator in power transmission line. However no consolidated techniques or methodologies can on line monitor its internal temperature now. Thus a new method using embedding fiber Bragg grating (FBG) in fiber reinforced polymer (FRP) rod is adopted to monitor its internal temperature. To correctly demodulate the internal temperature of FRP rod from the Bragg wavelength shift of FBG, the conversion coefficient between them is deduced theoretically based on comprehensive investigation on the thermal stresses of the metal-composite joint, as well as its material and structural properties. Theoretical model shows that the conversion coefficients of FBG embedded in different positions will be different because of non-uniform thermal stress distribution, which is verified by an experiment. This work lays the theoretical foundation of monitoring the internal temperature of composite insulator with embedding FBG, which is of great importance to its health structural monitoring, especially early diagnosis.

  19. Dynamical Conductivity across the Disorder-Tuned Superconductor-Insulator Transition

    Directory of Open Access Journals (Sweden)

    Mason Swanson

    2014-04-01

    Full Text Available We calculate the dynamical conductivity σ(ω and the bosonic (pair spectral function P(ω from quantum Monte Carlo simulations across clean and disorder-driven superconductor-insulator transitions (SITs. We identify characteristic energy scales in the superconducting and insulating phases that vanish at the transition due to enhanced quantum fluctuations, despite the persistence of a robust fermionic gap across the SIT. Disorder leads to enhanced absorption in σ(ω at low frequencies compared to the SIT in a clean system. Disorder also expands the quantum critical region, due to a change in the universality class, with an underlying T=0 critical point with a universal low-frequency conductivity σ^{*}≃0.5(4e^{2}/h.

  20. Direct measurement of the low temperature spin state transitions in La1-xSrxCoO3 (0.05 < x < 0.3)

    Science.gov (United States)

    Gulec, A.; Klie, R. F.

    2014-12-01

    Sr-doped LaCoO3 has a complex magnetic phase diagram, which is believed to be directly correlated to changes in the crystal structure and ordering of the Co3+ spin states. In this work, we study the low temperature Co3+-ion spin state transitions in Sr-doped LaCoO3 around the critical doping concentration where a metal to insulator transition has been observed using electron energy-loss spectroscopy of the O K-edge combined with the Co L-edge fine structure. We measure the local spin state of the Co3+-ions and we demonstrate that the Co3+ spin-state transition only occurs in La0.95Sr0.05CoO3 single-crystal materials in the temperature range accessible by LN2 in-situ cooling, while no structural symmetry change is observed. The presence of this low-temperature spin-state transition in La1-xSrxCoO3 (x < 0.17) has been proposed as the origin of the percolative magnetic ordering in doped LaCoO3.

  1. Understanding metal–insulator transition in sodium tungsten bronze

    Indian Academy of Sciences (India)

    2015-05-20

    May 20, 2015 ... We have carried out angle-resolved photoemission spectroscopy (ARPES) and spectromicroscopy studies to understand the metal–insulator transition (MIT) observed in sodium tungsten bronzes, NaWO3. The experimentally determined band structure is compared with the theoretical calculation based ...

  2. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  3. Surface modification by metal ion implantation forming metallic nanoparticles in an insulating matrix

    International Nuclear Information System (INIS)

    Salvadori, M.C.; Teixeira, F.S.; Sgubin, L.G.; Cattani, M.; Brown, I.G.

    2014-01-01

    Highlights: • Metal nanoparticles can be produced through metallic ion implantation in insulating substrate, where the implanted metal self-assembles into nanoparticles. • The nanoparticles nucleate near the maximum of the implantation depth profile, that can be estimated by computer simulation using the TRIDYN. • Nanocomposites, obtained by this way, can be produced in different insulator materials. More specifically we have studied Au/PMMA (polymethylmethacrylate), Pt/PMMA, Ti/alumina and Au/alumina systems. • The nanocomposites were characterized by measuring the resistivity of the composite layer as function of the dose implanted, reaching the percolation threshold. • Excellent agreement was found between the experimental results and the predictions of the theory. - Abstract: There is special interest in the incorporation of metallic nanoparticles in a surrounding dielectric matrix for obtaining composites with desirable characteristics such as for surface plasmon resonance, which can be used in photonics and sensing, and controlled surface electrical conductivity. We have investigated nanocomposites produced by metal ion implantation into insulating substrates, where the implanted metal self-assembles into nanoparticles. The nanoparticles nucleate near the maximum of the implantation depth profile (projected range), which can be estimated by computer simulation using the TRIDYN code. TRIDYN is a Monte Carlo simulation program based on the TRIM (Transport and Range of Ions in Matter) code that takes into account compositional changes in the substrate due to two factors: previously implanted dopant atoms, and sputtering of the substrate surface. Our study show that the nanoparticles form a bidimentional array buried a few nanometers below the substrate surface. We have studied Au/PMMA (polymethylmethacrylate), Pt/PMMA, Ti/alumina and Au/alumina systems. Transmission electron microscopy of the implanted samples show that metallic nanoparticles form in

  4. Transport properties of metal-metal and metal-insulator heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fadlallah Elabd, Mohamed Mostafa

    2010-06-09

    In this study we present results of electronic structure and transport calculations for metallic and metal-insulator interfaces, based on density functional theory and the non-equilibrium Green's function method. Starting from the electronic structure of bulk Al, Cu, Ag, and Au interfaces, we study the effects of different kinds of interface roughness on the transmission coefficient (T(E)) and the I-V characteristic. In particular, we compare prototypical interface distortions, including vacancies, metallic impurities, non-metallic impurities, interlayer, and interface alloy. We find that vacancy sites have a huge effect on transmission coefficient. The transmission coefficient of non-metallic impurity systems has the same behaviour as the transmission coefficient of vacancy system, since these systems do not contribute to the electronic states at the Fermi energy. We have also studied the transport properties of Au-MgO-Au tunnel junctions. In particular, we have investigated the influence of the thickness of the MgO interlayer, the interface termination, the interface spacing, and O vacancies. Additional interface states appear in the O-terminated configuration due to the formation of Au-O bonds. An increasing interface spacing suppresses the Au-O bonding. Enhancement of T(E) depends on the position and density of the vacancies (the number of vacancies per unit cell). (orig.)

  5. Theory of Temperature Dependence of the Magnetization in Rare-Earth-Transition-Metal Alloys

    DEFF Research Database (Denmark)

    Szpunar, B.; Lindgård, Per-Anker

    1977-01-01

    -spin. The interaction is mediated by an effective alloy medium calculated using the CPA theory and elliptic densities of states. Es wird gezeigt, daß die Temperaturabhängigkeit der magnetischen Momente und die Curie-Temperatur sowie die Temperatur der ferrimagnetischen Kompensation für Gd1-xTx (T = Co, Ni und Fe) und Y......1-xCox durch ein einfaches Model1 erklärt werden können, das eine RKKY-Wechsel-wirkung zwischen den Momenten der Seltenen Erden und des Pseudo-Spins des Übergangsmetalls annimmt. Die Wechselwirkung wird durch ein effektives Legierungsmedium übermittelt, das mit der CPA-Theorie und elliptischen......It is shown that the temperature dependence of the magnetic moments and Curie and ferrimagnetic compensation temperatures for Gdl-xTx (T = Co, Ni, and Fe) and Y1-xCox can be accounted for by a simple model assuming a RKKY interaction between the rare-earth moments and the transition-metal pseudo...

  6. Spin-State Transition in La1-xSrxCoO3 Single Crystals

    Science.gov (United States)

    Bhardwaj, S.; Prabhakaran, D.; Awasthi, A. M.

    2011-07-01

    We present a study of the thermal conductivity (κ), specific heat (Cp) and Raman spectra of La1-xSrxCoO3 (x = 0,0.1) single crystals. Both the specimens have low thermal conductivity and board Raman peaks, arising from strong scattering of phonons by lattice disorder, produced by (and doping-enhanced) spin-states admixture of the Co3+ ions. The thermal conductivity anomalously deviates from ˜1/T behaviour at high (room) temperatures, expected of an insulator. High-temperature specific heat reveals large decrease in the metal-insulator (M-I) transition temperature with Sr-doping.

  7. Strongly Coupled Magnetic and Electronic Transitions in Multivalent Strontium Cobaltites.

    Science.gov (United States)

    Lee, J H; Choi, Woo Seok; Jeen, H; Lee, H-J; Seo, J H; Nam, J; Yeom, M S; Lee, H N

    2017-11-22

    The topotactic phase transition in SrCoO x (x = 2.5-3.0) makes it possible to reversibly transit between the two distinct phases, i.e. the brownmillerite SrCoO 2.5 that is a room-temperature antiferromagnetic insulator (AFM-I) and the perovskite SrCoO 3 that is a ferromagnetic metal (FM-M), owing to their multiple valence states. For the intermediate x values, the two distinct phases are expected to strongly compete with each other. With oxidation of SrCoO 2.5 , however, it has been conjectured that the magnetic transition is decoupled to the electronic phase transition, i.e., the AFM-to-FM transition occurs before the insulator-to-metal transition (IMT), which is still controversial. Here, we bridge the gap between the two-phase transitions by density-functional theory calculations combined with optical spectroscopy. We confirm that the IMT actually occurs concomitantly with the FM transition near the oxygen content x = 2.75. Strong charge-spin coupling drives the concurrent IMT and AFM-to-FM transition, which fosters the near room-T magnetic transition characteristic. Ultimately, our study demonstrates that SrCoO x is an intriguingly rare candidate for inducing coupled magnetic and electronic transition via fast and reversible redox reactions.

  8. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  9. Efficient photocarrier injection in a transition metal oxide heterostructure

    CERN Document Server

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  10. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  11. Investigation of the electronic structure of high-temperature superconductors and related transition metal oxides with near-edge x-ray absorption spectroscopy

    International Nuclear Information System (INIS)

    Gerhold, S.

    2001-01-01

    The unoccupied electronic structure and its orbital character has been studied with polarization-dependent near-edge x-ray absorption spectroscopy (NEXAFS) for selected high-temperature superconductors (HTSC) and related transition metal oxides. Although YBa 2 Cu 3 O 7-δ (Y-123) is arguably the best-investigated HTSC a conclusive NEXAFS study on how partial substitution of Cu by other transition metals affects the electronic structure has sorely been missing. The study presented here on a series of well characterized YBa 2 Cu 3-x Fe x O y single crystals shows that the cause for T c suppression is not at all magnetic pair breaking but charge carrier depletion, primarily in the chains; effects from disorder cannot be excluded. Annealing at high oxygen pressure increases along with oxygen content both the hole concentration and T c . Fe 3d-O 2p-derived states contribute prominently to the spectra for all polarizations a few eV above E F . Iron prefers a trivalent state in Y-123; upon reduction a spin transition can be observed. As YBa 2 Cu 3-x Fe x O y single crystals cannot be detwinned it is very difficult to distinguish between contributions from planes and chains to the spectra. In this situation thin films grown with a reduced degree of twinning ('twin-poor') allow more detailed investigations. An extended self-absorption correction was developed for fluorescence yield NEXAFS on epitactical HTSC thin films. Its application to twin-poor Y-123 thin films demonstrates that (apart from the effect of residual twins) the spectral information is equivalent to that of detwinned single crystals for a range of optimum film thicknesses, and this in turn allows to augment the NEXAFS study of YBa 2 Cu 3-x Fe x O y with spectra for corresponding twin-poor thin films. The system Ca 2-x (Sr,La) x RuO 4 is structurally related to the HTSCs; the development of its unoccupied electronic structure with x was investigated in this work, with emphasis on the metal-insulator

  12. Holographic entanglement entropy in two-order insulator/superconductor transitions

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Yan, E-mail: yanpengphy@163.com; Liu, Guohua

    2017-04-10

    We study holographic superconductor model with two orders in the five dimensional AdS soliton background away from the probe limit. We disclose properties of phase transitions mostly from the holographic topological entanglement entropy approach. Our results show that the entanglement entropy is useful in investigating transitions in this general model and in particular, there is a new type of first order phase transition in the insulator/superconductor system. We also give some qualitative understanding and obtain the analytical condition for this first order phase transition to occur. As a summary, we draw the complete phase diagram representing effects of the scalar charge on phase transitions.

  13. Temperature dependence of non-Debye disorder in doped manganites

    International Nuclear Information System (INIS)

    Meneghini, C.; Cimino, R.; Pascarelli, S.; Mobilio, S.; Raghu, C.; Sarma, D.D.

    1997-01-01

    Ca-doped manganite La 1-x Ca x MnO 3 samples with x=0.2 and 0.4 were investigated by extended x-ray absorption fine structure (EXAFS) as a function of temperature and preparation method. The samples exhibit characteristic resistivity change across the metal-insulator (MI) transition temperature whose shape and position depend on Ca-doping concentration and sample thermal treatment. EXAFS results evidenced an increase of nonthermal disorder at the MI transition temperature which is significantly correlated with the resistivity behavior. copyright 1997 The American Physical Society

  14. Upper critical fields and superconducting transition temperatures of some zirconium-base amorphous transition-metal alloys

    International Nuclear Information System (INIS)

    Karkut, M.G.; Hake, R.R.

    1983-01-01

    Superconducting upper critical fields H/sub c/2(T), transition temperatures T/sub c/, and normal-state electrical resistivities rho/sub n/ have been measured in the amorphous transition-metal alloy series Zr/sub 1-z/Co/sub x/, Zr/sub 1-x/Ni/sub x/, (Zr/sub 1-x/Ti/sub x/)/sub 0.78/Ni/sub 0.22/, and (Zr/sub 1-x/Nb/sub x/)/sub 0.78/Ni/sub 0.22/. Structural integrity of these melt-spun alloys is indicated by x-ray, density, bend-ductility, normal-state electrical resistivity, superconducting transition width, and mixed-state flux-pinning measurements. The specimens display T/sub c/ = 2.1--3.8 K, rho/sub n/ = 159--190 μΩ cm, and Vertical Bar(dH/sub c/2/dT)cVertical Bar = 28--36 kG/K. These imply electron mean free paths lroughly-equal2--6 A, zero-temperature Ginzburg-Landau coherence distances xi/sub G/0roughly-equal50--70 A, penetration depths lambda/sub G/0roughly-equal(7--10) x 10 3 A, and extremely high dirtiness parameters xi 0 /lroughly-equal300--1300. All alloys display H/sub c/2(T) curves with negative curvature and (with two exceptions) fair agreement with the standard dirty-limit theory of Werthamer, Helfand, Hohenberg, and Maki (WHHM) for physically reasonable values of spin-orbit-coupling induced, electron-spin-flip scattering time tau/sub so/. This is in contrast to the anomalously elevated H/sub c/2(T) behavior which is nearly linear in T that is observed by some, and the unphysically low-tau/sub so/ fits to WHHM theory obtained by others, for various amorphous alloys

  15. Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

    Science.gov (United States)

    Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo; Dalmiglio, Matteo; Orlando, Fabrizio; Baraldi, Alessandro; Gammelgaard, Lauge; Barreto, Lucas; Bianchi, Marco; Perkins, Edward; Hofmann, Philip

    2012-09-12

    High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

  16. Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

    DEFF Research Database (Denmark)

    Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

    2012-01-01

    High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

  17. Transport and screen blockage characteristics of reflective metallic insulation materials

    International Nuclear Information System (INIS)

    Brocard, D.N.

    1984-01-01

    In the event of a LOCA within a nuclear power plant, it is possible for insulation debris to be generated by the break jet. Such debris has the potential for PWR sump screen (or BWR RHR suction inlet) blockage and thus can affect the long-term recirculation capability. In addition to the variables of break jet location and orientation, the types and quantities of debris which could be generated are dependent on the insulation materials employed. This experimental investigation was limited to reflective metallic insulation and components thereof. The study was aimed at determining the flow velocities needed to transport the insulation debris to the sump screens and the resulting modes of screen blockage. The tests revealed that thin metallic foils (0.0025 in. and 0.004 in.) could transport at low flow velocities, 0.2 to 0.5 ft/sec. Thicker foils (0.008 in.) transported at higher velocities, 0.4 to 0.8 ft/sec, and as fabricated half cylinder insulation units required velocities in excess of 1.0 ft/sec for transport. The tests also provided information on screen blockage patterns that showed blockage could occur at the lower portion of the screen as foils readily flipped on the screen when reaching it

  18. Metal-insulator crossover in superconducting cuprates in strong magnetic fields

    International Nuclear Information System (INIS)

    Marchetti, P.A.; Su Zhaobin; Yu Lu

    2001-02-01

    The metal-insulator crossover of the in-plane resistivity upon temperature decrease, recently observed in several classes of cuprate superconductors, when a strong magnetic field suppresses the superconductivity, is explained using the U(1)xSU(2) Chern-Simons gauge field theory. The origin of this crossover is the same as that for a similar phenomenon observed in heavily underdoped cuprates without magnetic field. It is due to the interplay between the diffusive motion of the charge carriers and the 'peculiar' localization effect due to short-range antiferromagnetic order. We also calculate the in-plane transverse magnetoresistance which is in a fairly good agreement with available experimental data. (author)

  19. Localized-to-extended-states transition below the Fermi level

    Science.gov (United States)

    Tito, M. A.; Pusep, Yu. A.

    2018-05-01

    Time-resolved photoluminescence is employed to examine a transition from localized to extended electron states below the Fermi level in multiple narrow quantum well GaAs/AlGaAs heterostructures, where disorder was generated by interface roughness. Such a transition resembles the metal-insulator transition profoundly investigated by electric transport measurements. An important distinction distinguishes the localized-to-extended-states transition studied here: it takes place below the Fermi level in an electron system with a constant concentration, which implies unchanging Coulomb correlations. Moreover, for such a localized-to-extended-states transition the temperature is shown to be irrelevant. In the insulating regime the magnetic field was found to cause an additional momentum relaxation which considerably enhanced the recombination rate. Thus, we propose a method to explore the evolution of the localized electron states in a system with a fixed disorder and Coulomb interaction.

  20. Electron spectroscopic investigation of metal–insulator transition in ...

    Indian Academy of Sciences (India)

    Unknown

    Electronic structure of transition metal (TM) oxides has been under detailed investi- ..... Scientific and Industrial Research, New Delhi for a fellowship. ... Maiti K 1998 Novel electronic structures in transition metal oxides, Ph D thesis, Solid.

  1. For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-10-01

    Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

  2. Quasi-one-dimensional metals on semiconductor surfaces with defects

    International Nuclear Information System (INIS)

    Hasegawa, Shuji

    2010-01-01

    Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

  3. Optical transitions in two-dimensional topological insulators with point defects

    Science.gov (United States)

    Sablikov, Vladimir A.; Sukhanov, Aleksei A.

    2016-12-01

    Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

  4. Optical study of phase transitions in single-crystalline RuP

    Science.gov (United States)

    Chen, R. Y.; Shi, Y. G.; Zheng, P.; Wang, L.; Dong, T.; Wang, N. L.

    2015-03-01

    RuP single crystals of MnP-type orthorhombic structure were synthesized by the Sn flux method. Temperature-dependent x-ray diffraction measurements reveal that the compound experiences two structural phase transitions, which are further confirmed by enormous anomalies shown in temperature-dependent resistivity and magnetic susceptibility. Particularly, the resistivity drops monotonically upon temperature cooling below the second transition, indicating that the material shows metallic behavior, in sharp contrast with the insulating ground state of polycrystalline samples. Optical conductivity measurements were also performed in order to unravel the mechanism of these two transitions. The measurement revealed a sudden reconstruction of band structure over a broad energy scale and a significant removal of conducting carriers below the first phase transition, while a charge-density-wave-like energy gap opens below the second phase transition.

  5. Synthesis of Mg2FeH6 containing as additives transition metal and transition metal fluorides or carbon

    International Nuclear Information System (INIS)

    Zepon, G.; Leiva, D.R.; Botta, W.J.

    2010-01-01

    The Mg 2 FeH 6 is a promising way of storing hydrogen in solid form, composed by elements that have low cost and, at the same time, high volumetric storage density: 150 kg H 2 /m 3 . However, this complex hydride is not easily synthesized as a single phase material. The hydrogen sorption high temperature and slow kinetics are the major limitations for the practical application of the Mg 2 FeH 6 as a hydrogen storage material. Little is known about the effects of additives in Mg 2 FeH 6 based nanocomposites in this work were synthesized by MAE under hydrogen atmosphere nanocomposites based on Mg 2 FeH 6 containing additives as transition metals, transition metals fluorides of transition metals or carbon, in order to obtain information on the effects of the selected additives. To this end, we used characterization techniques such as XRD, SEM and TEM, thermal analysis by DSC and curves made in apparatus PCT.(author)

  6. Nonmetal-metal transition in metal–molten-salt solutions

    NARCIS (Netherlands)

    Silvestrelli, P.-L.; Alavi, A.; Parrinello, M.; Frenkel, D.

    1996-01-01

    The method of ab initio molecular dynamics, based on finite-temperature density-functional theory, is used to study the nonmetal-metal transition in two different metal–molten-salt solutions, Kx(KCl)1-x and Nax(NaBr)1-x. As the excess metal concentration is increased the electronic density becomes

  7. Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

    Science.gov (United States)

    Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.

    2018-01-01

    We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.

  8. Magnetic and Structural Phase Transitions in Thulium under High Pressures and Low Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vohra, Yogesh K.; Tsoi, Georgiy M.; Samudrala, Gopi K. [UAB

    2017-10-01

    The nature of 4f electrons in many rare earth metals and compounds may be broadly characterized as being either "localized" or "itinerant", and is held responsible for a wide range of physical and chemical properties. The pressure variable has a very dramatic effect on the electronic structure of rare earth metals which in turn drives a sequence of structural and magnetic transitions. We have carried out four-probe electrical resistance measurements on rare earth metal Thulium (Tm) under high pressures to 33 GPa and low temperatures to 10 K to monitor the magnetic ordering transition. These studies are complemented by angle dispersive x-ray diffraction studies to monitor crystallographic phase transitions at high pressures and low temperatures. We observe an abrupt increase in magnetic ordering temperature in Tm at a pressure of 17 GPa on phase transition from ambient pressure hcp-phase to α-Sm phase transition. In addition, measured equation of state (EOS) at low temperatures show anomalously low thermal expansion coefficients likely linked to magnetic transitions.

  9. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  10. Heat Transfer Modeling for Rigid High-Temperature Fibrous Insulation

    Science.gov (United States)

    Daryabeigi, Kamran; Cunnington, George R.; Knutson, Jeffrey R.

    2012-01-01

    Combined radiation and conduction heat transfer through a high-temperature, high-porosity, rigid multiple-fiber fibrous insulation was modeled using a thermal model previously used to model heat transfer in flexible single-fiber fibrous insulation. The rigid insulation studied was alumina enhanced thermal barrier (AETB) at densities between 130 and 260 kilograms per cubic meter. The model consists of using the diffusion approximation for radiation heat transfer, a semi-empirical solid conduction model, and a standard gas conduction model. The relevant parameters needed for the heat transfer model were estimated from steady-state thermal measurements in nitrogen gas at various temperatures and environmental pressures. The heat transfer modeling methodology was evaluated by comparison with standard thermal conductivity measurements, and steady-state thermal measurements in helium and carbon dioxide gases. The heat transfer model is applicable over the temperature range of 300 to 1360 K, pressure range of 0.133 to 101.3 x 10(exp 3) Pa, and over the insulation density range of 130 to 260 kilograms per cubic meter in various gaseous environments.

  11. Thermophysical Property Measurements of Silicon-Transition Metal Alloys

    Science.gov (United States)

    Banish, R. Michael; Erwin, William R.; Sansoucie, Michael P.; Lee, Jonghyun; Gave, Matthew A.

    2014-01-01

    Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon-transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

  12. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    Science.gov (United States)

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  13. Apparatus to measure emissivities of metallic films between 90K and room temperature

    International Nuclear Information System (INIS)

    Bekeris, V.I.; Ramos, E.D.; Sanchez, D.H.

    1975-01-01

    The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented [pt

  14. Apparatus to measure emissivities of metallic films between 90K and room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Bekeris, V I [Nunez Univ. Nacional (Argentina). Faculdad de Ciencias Exactas Y Naturales; Ramos, E D [Santa Rosa Univ. Nacional (Argentina). Facultad de Ciencias Exactas Y Naturales; Sanchez, D H [Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche

    1975-09-01

    The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented.

  15. Peruvian perovskite Between Transition-metal to PGM/PlatinumGroupMetal Catalytic Fusion

    Science.gov (United States)

    Maksoed, Wh-

    2016-11-01

    Strongly correlated electronic materials made of simple building blocks, such as a transition-metal ion in an octahedral oxygen cage forming a perovskite structure- Dagotto & Tokura for examples are the high-temperature superconductivity & the CMR/Colossal Magnetoresistance . Helium-4 denotes from LC Case,ScD: "Catalytic Fusion of Deuterium into Helium-4"- 1998 dealt with gaseous D2- "contacted with a supported metallic catalyst at superatmospheric pressure". The catalyst is a platinum-group metal, at about 0.5% - 1% by weight, on activated C. Accompanies Stephen J Geier, 2010 quotes "transition metal complexes", the Energy thus produced is enormous, and because the deuterium is very cheap in the form of heavy water (less than US 1/g), the fuel cost is very low (seas &Deuteronomy to be eternally preserves. Heartfelt Gratitudes to HE. Mr. Prof. Ir. HANDOJO.

  16. Observation of hidden atomic order at the interface between Fe and topological insulator Bi_{2}Te_{3}

    OpenAIRE

    Sanchez-Barriga, Jaime; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Volykhov, Andrey A.; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I.; Koch, Roland J.; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V.

    2017-01-01

    Abstract: To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface diso...

  17. Effects of Disorder on the Pressure-Induced Mott Transition in κ-(BEDT-TTF2Cu[N(CN2]Cl

    Directory of Open Access Journals (Sweden)

    Elena Gati

    2018-01-01

    Full Text Available We present a study of the influence of disorder on the Mott metal-insulator transition for the organic charge-transfer salt κ -(BEDT-TTF 2 Cu[N(CN 2 ]Cl. To this end, disorder was introduced into the system in a controlled way by exposing the single crystals to X-ray irradiation. The crystals were then fine-tuned across the Mott transition by the application of continuously controllable He-gas pressure at low temperatures. Measurements of the thermal expansion and resistance show that the first-order character of the Mott transition prevails for low irradiation doses achieved by irradiation times up to 100 h. For these crystals with a moderate degree of disorder, we find a first-order transition line which ends in a second-order critical endpoint, akin to the pristine crystals. Compared to the latter, however, we observe a significant reduction of both, the critical pressure p c and the critical temperature T c . This result is consistent with the theoretically-predicted formation of a soft Coulomb gap in the presence of strong correlations and small disorder. Furthermore, we demonstrate, similar to the observation for the pristine sample, that the Mott transition after 50 h of irradiation is accompanied by sizable lattice effects, the critical behavior of which can be well described by mean-field theory. Our results demonstrate that the character of the Mott transition remains essentially unchanged at a low disorder level. However, after an irradiation time of 150 h, no clear signatures of a discontinuous metal-insulator transition could be revealed anymore. These results suggest that, above a certain disorder level, the metal-insulator transition becomes a smeared first-order transition with some residual hysteresis.

  18. Photoinduced Topological Phase Transitions in Topological Magnon Insulators.

    Science.gov (United States)

    Owerre, S A

    2018-03-13

    Topological magnon insulators are the bosonic analogs of electronic topological insulators. They are manifested in magnetic materials with topologically nontrivial magnon bands as realized experimentally in a quasi-two-dimensional (quasi-2D) kagomé ferromagnet Cu(1-3, bdc), and they also possess protected magnon edge modes. These topological magnetic materials can transport heat as well as spin currents, hence they can be useful for spintronic applications. Moreover, as magnons are charge-neutral spin-1 bosonic quasiparticles with a magnetic dipole moment, topological magnon materials can also interact with electromagnetic fields through the Aharonov-Casher effect. In this report, we study photoinduced topological phase transitions in intrinsic topological magnon insulators in the kagomé ferromagnets. Using magnonic Floquet-Bloch theory, we show that by varying the light intensity, periodically driven intrinsic topological magnetic materials can be manipulated into different topological phases with different sign of the Berry curvatures and the thermal Hall conductivity. We further show that, under certain conditions, periodically driven gapped topological magnon insulators can also be tuned to synthetic gapless topological magnon semimetals with Dirac-Weyl magnon cones. We envision that this work will pave the way for interesting new potential practical applications in topological magnetic materials.

  19. RESEARCHES REGARDING USE OF TEXTILE MATERIALS FOR THERMAL INSULATION AT NEGATIVE TEMPERATURES

    Directory of Open Access Journals (Sweden)

    IOSUB Andrei

    2014-05-01

    Full Text Available Using thermal insulation in negative temperature acts to reduce heat flow to the cooled space or to objects that have a temperature below ambient temperature. To achieve economic operation of the space to be cooled insulation thickness and quality is an important factor. In this article we want to compare three products used in thermal insulation at negative temperatures: expanded polystyrene, non-woven and wool coats. The materials will be tested with a mechanical vapor compression refrigerator capable of producing temperatures in the range +4 .. -35 ° C, managed by a programmer Dixel capable of recording values between +40. .. -60 °C. Refrigeration insulation enclosure was made with 100 mm expanded polystyrene. On one side of the enclosure will be a cut of 250 * 250 mm, chosen in a central position where the material will be introduced to be tested. The dimensions of the samples are 250 * 250 * 60 mm. To check the insulation properties of materials it will be used a temperature logger capable of recording with two probes temperatures between +125...-40° C. One of the probes will be inserted inside the refrigerator and the second probe will be positioned to the outside of the test material adhered to an aluminum plate, in order to read a average temperature. The difference in thickness of the insulation shall be filled with non-woven material. Hardening the assembly will be made using a 6 mm thick OSB board. The materials will be tested in an identical ambient temperature and humidity.

  20. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    Science.gov (United States)

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  1. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  2. Synthesis of Binary Magnesium-Transition Metal Oxides via Inverse Coprecipitation

    Science.gov (United States)

    Yagi, Shunsuke; Ichikawa, Yuya; Yamada, Ikuya; Doi, Takayuki; Ichitsubo, Tetsu; Matsubara, Eiichiro

    2013-02-01

    Synthesis of binary magnesium-transition metal oxides, MgM2O4 (M: Cr, Mn, Fe, Co) and MgNiO2, was performed by calcination at relatively low temperatures of 500 and 750 °C for 24 h through inverse coprecipitation of carbonate hydroxide precursors. The important roles of the precipitation agent, sodium carbonate, were clarified by considering equilibria in an aqueous solution. The structure parameters of the obtained binary magnesium-transition metal oxide powders, specifically the occupancy of atomic sites, were evaluated from synchrotron X-ray diffraction (XRD) profiles by Rietveld refinement in addition to the magnetic properties at room temperature. The present work provides general guidelines for low-cost and high-volume synthesis of complex oxides, which are easily decomposed at high temperatures.

  3. Stochastic IMT (Insulator-Metal-Transition Neurons: An Interplay of Thermal and Threshold Noise at Bifurcation

    Directory of Open Access Journals (Sweden)

    Abhinav Parihar

    2018-04-01

    Full Text Available Artificial neural networks can harness stochasticity in multiple ways to enable a vast class of computationally powerful models. Boltzmann machines and other stochastic neural networks have been shown to outperform their deterministic counterparts by allowing dynamical systems to escape local energy minima. Electronic implementation of such stochastic networks is currently limited to addition of algorithmic noise to digital machines which is inherently inefficient; albeit recent efforts to harness physical noise in devices for stochasticity have shown promise. To succeed in fabricating electronic neuromorphic networks we need experimental evidence of devices with measurable and controllable stochasticity which is complemented with the development of reliable statistical models of such observed stochasticity. Current research literature has sparse evidence of the former and a complete lack of the latter. This motivates the current article where we demonstrate a stochastic neuron using an insulator-metal-transition (IMT device, based on electrically induced phase-transition, in series with a tunable resistance. We show that an IMT neuron has dynamics similar to a piecewise linear FitzHugh-Nagumo (FHN neuron and incorporates all characteristics of a spiking neuron in the device phenomena. We experimentally demonstrate spontaneous stochastic spiking along with electrically controllable firing probabilities using Vanadium Dioxide (VO2 based IMT neurons which show a sigmoid-like transfer function. The stochastic spiking is explained by two noise sources - thermal noise and threshold fluctuations, which act as precursors of bifurcation. As such, the IMT neuron is modeled as an Ornstein-Uhlenbeck (OU process with a fluctuating boundary resulting in transfer curves that closely match experiments. The moments of interspike intervals are calculated analytically by extending the first-passage-time (FPT models for Ornstein-Uhlenbeck (OU process to include a

  4. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  5. Photo-assisted cyanation of transition metal nitrates coupled with room temperature C-C bond cleavage of acetonitrile.

    Science.gov (United States)

    Zou, Shihui; Li, Renhong; Kobayashi, Hisayoshi; Liu, Juanjuan; Fan, Jie

    2013-03-07

    It is a challenge to use acetonitrile as a cyanating agent because of the difficulty in cleaving its C-CN bond. Herein, we report a mild photo-assisted route to conduct the cyanation of transition metal nitrates using acetonitrile as the cyanating agent coupled with room-temperature C-C bond cleavage. DFT calculations and experimental observations suggest a radical-involved reaction mechanism, which excludes toxicity from free cyanide ions.

  6. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  7. Magnetotransport investigations of the two-dimensional metallic state in silicon metal-oxid-semiconductor structures

    International Nuclear Information System (INIS)

    Prinz, A.

    2002-03-01

    For more than two decades it was the predominant view among the physical community that the every two-dimensional (2D) disordered electron system becomes insulating as the temperature approaches the absolute zero temperature (0 Kelvin or -273.15 o C). Two-dimensional means that the movement of the charge carriers is confined in one direction by a potential so that the carriers can move freely only perpendicular to the confinement. The most famous physical realization of a 2D system is the silicon metal-oxide-semiconductor field effect transistor (Si-MOSFET). It is one of the basic elements of most electronic devices in our daily life. The working principle is very simple. Charges are attracted to the semiconductor-oxide interface by an electric field applied between the metallic gate and the semiconductor, so that a 2D conductive channel is formed. The charge density can be adjusted by the voltage from zero up to 10 13 cm -2 . In 1994 Kravchenko and coworkers made a very important discovery. They studied high mobility Si-MOSFETs and found that for densities below a certain critical value, nc, the resistivity increases as the temperature is decreased below 2 K, whereas for densities above $n c $ the resistivity decreases unexpectedly. The transition from insulating to metallic behavior, known as metal-insulator transition (MIT), was obviously a contradiction to the commonly accepted theories which predict insulating behavior for any density. The insulating behavior is a consequence of the wave properties of electrons which leads to interference in disordered media and thus to enhanced backscattering. In the subsequent years, experimental studies were performed on a variety of 2D systems, which qualitatively showed a similar behavior. All the investigated samples had one thing in common. The interaction energy between the carriers was considerable higher than their mean kinetic energy due to their movement in the 2D plane. Since the electron-electron interaction was

  8. Trial fabrication and preliminary characterization of electrical insulator for liquid metal system

    International Nuclear Information System (INIS)

    Nakamichi, Masaru; Kawamura, Hiroshi; Oyamada, Rokuro

    1995-03-01

    In the design of the liquid metal blanket, MHD pressure drop is one of critical issues. Ceramic coating on the surface of structural material is considered as an electrical insulator to reduce the MHD pressure drop. Ceramic coating such as Y 2 O 3 is a promising electrical insulator due to its high electrical resistivity and good compatibility with liquid lithium. This report describes the trial fabrication and preliminary characterization of electrical insulator for a design study of the liquid metal system. From the results of trial fabrication and preliminary characterization, it is concluded that densified atmospheric plasma spray Y 2 O 3 coating with 410SS undercoating between 316SS substrate and Y 2 O 3 coating is suitable for Y 2 O 3 coating fabrication. (author)

  9. Use of extremity insulation during whole body hyperthermia to reduce temperature nonuniformity

    International Nuclear Information System (INIS)

    Thrall, D.E.; Page, R.L.

    1987-01-01

    The author previously documented during whole body hyperthermia in dogs using a radiant heating device that temperature at superficial sites, including tibial bone marrow, falls below systemic arterial temperature during the plateau phase of heating. This may be due to direct heat loss to the environment. Sites where temperature is lower than systemic arterial temperature during the plateau phase may become sanctuary sites where tumor deposits are spared because they do not receive the prescribed thermal dose. In an attempt to decrease temperature nonuniformity and increase thermal dose delivered to such superficial sites, extremity insulation has been employed during whole body hyperthermia in dogs. The author measured temperature at cutaneous and subcutaneous sites and within tibial bone marrow in insulated and noninsulated extremities of dogs undergoing whole body hyperthermia in the radiant heating device. The author found that extremity insulation is effective in reducing extremity temperature nonuniformity. Specific results are presented. Extremity insulation may be necessary during whole body hyperthermia to assure that extremity tumor deposits receive a thermal dose similar to that prescribed for the entire body

  10. Optical transmission theory for metal-insulator-metal periodic nanostructures

    Directory of Open Access Journals (Sweden)

    Blanchard-Dionne Andre-Pierre

    2016-11-01

    Full Text Available A semi-analytical formalism for the optical properties of a metal-insulator-metal periodic nanostructure using coupled-mode theory is presented. This structure consists in a dielectric layer in between two metallic layers with periodic one-dimensional nanoslit corrugation. The model is developed using multiple-scattering formalism, which defines transmission and reflection coefficients for each of the interface as a semi-infinite medium. Total transmission is then calculated using a summation of the multiple paths of light inside the structure. This method allows finding an exact solution for the transmission problem in every dimension regime, as long as a sufficient number of diffraction orders and guided modes are considered for the structure. The resonant modes of the structure are found to be related to the metallic slab only and to a combination of both the metallic slab and dielectric layer. This model also allows describing the resonant behavior of the system in the limit of a small dielectric layer, for which discontinuities in the dispersion curves are found. These discontinuities result from the out-of-phase interference of the different diffraction orders of the system, which account for field interaction for both inner interfaces of the structure.

  11. Thermal insulation of the high-temperature helium-cooled reactors

    International Nuclear Information System (INIS)

    Kharlamov, A.G.; Grebennik, V.N.

    1979-01-01

    Unlike the well-known thermal insulation methods, development of high-temperature helium reactors (HTGR) raises quite new problems. To understand these problems, it is necessary to consider behaviour of thermal insulation inside the helium circuit of HTGR and requirements imposed on it. Substantiation of these requirements is given in the presented paper

  12. All-optical bit magnitude comparator device using metal-insulator-metal plasmonic waveguide

    Science.gov (United States)

    Kumar, Santosh; Singh, Lokendra; Chen, Nan-Kuang

    2017-12-01

    A plasmonic metal-insulator-metal (MIM) waveguide has great success in confining the surface plasmon up to a deep subwavelength scale. The structure of a nonlinear Mach-Zehnder interferometer (MZI) using a plasmonic MIM waveguide has been analyzed. A one-bit magnitude comparator has been designed using an MZI and two linear control waveguides. The device works on the Kerr effect inside the plasmonics waveguide. The mathematical description of the device is explained. The simulation of the device is done using MATLAB® and the finite-difference time-domain (FDTD) method.

  13. Thermal properties of zirconium diboride -- transition metal boride solid solutions

    Science.gov (United States)

    McClane, Devon Lee

    This research focuses on the thermal properties of zirconium diboride (ZrB2) based ceramics. The overall goal was to improve the understanding of how different transition metal (TM) additives influence thermal transport in ZrB2. To achieve this, ZrB2 with 0.5 wt% carbon, and 3 mol% of individual transition metal borides, was densified by hot-press sintering. The transition metals that were investigated were: Y, Ti, Hf, V, Nb, Ta, Cr, Mo, W, and Re. The room temperature thermal diffusivities of the compositions ranged from 0.331 cm2/s for nominally pure ZrB2 to 0.105 cm2/s for (Zr,Cr)B2 and converged around 0.155cm2/s at higher temperatures for all compositions. Thermal conductivities were calculated from the diffusivities, using temperature-dependent values for density and heat capacity. The electron contribution to thermal conductivity was calculated from measured electrical resistivity according to the Wiedemann-Franz law. The phonon contribution to thermal conductivity was calculated by subtracting the electron contribution from the total thermal conductivity. Rietveld refinement of x-ray diffraction data was used to determine the lattice parameters of the compositions. The decrease in thermal conductivity for individual additives correlated directly to the metallic radius of the additive. Additional strain appeared to exist for additives when the stable TM boride for that metal had different crystal symmetries than ZrB2. This research provided insight into how additives and impurities affect thermal transport in ZrB2. The research potentially offers a basis for future modeling of thermal conductivity in ultra-high temperature ceramics based on the correlation between metallic radius and the decrease in thermal conductivity.

  14. Unified computational model of transport in metal-insulating oxide-metal systems

    Science.gov (United States)

    Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

    2018-04-01

    A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

  15. The one-particle scenario for the metal-insulator transition in two-dimensional systems at T = 0

    CERN Document Server

    Tarasov, Y V

    2003-01-01

    The conductance of bounded disordered electron systems is calculated by reducing the original dynamic problem of arbitrary dimensionality to a set of strictly one-dimensional problems for one-particle mode propagators. The metallic ground state of a two-dimensional conductor, which is considered as a limiting case of three-dimensional quantum waveguide, is shown to result from its multi-modeness. As the waveguide thickness is reduced, e.g., by applying a 'pressing' potential, the electron system undergoes a set of continuous phase transitions related to discrete variations of the number of extended modes. The closing of the last current carrying mode is regarded as a phase transition of the electron system from metallic to dielectric state. The obtained results agree qualitatively with the observed 'anomalies' of resistivity of different two-dimensional electron and hole systems.

  16. Superconductor-Insulator transition in a single Josephson junction

    International Nuclear Information System (INIS)

    Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

    1999-01-01

    For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

  17. On the thermodynamics of phase transitions in metal hydrides

    Science.gov (United States)

    di Vita, Andrea

    2012-02-01

    Metal hydrides are solutions of hydrogen in a metal, where phase transitions may occur depending on temperature, pressure etc. We apply Le Chatelier's principle of thermodynamics to a particular phase transition in TiH x , which can approximately be described as a second-order phase transition. We show that the fluctuations of the order parameter correspond to fluctuations both of the density of H+ ions and of the distance between adjacent H+ ions. Moreover, as the system approaches the transition and the correlation radius increases, we show -with the help of statistical mechanics-that the statistical weight of modes involving a large number of H+ ions (`collective modes') increases sharply, in spite of the fact that the Boltzmann factor of each collective mode is exponentially small. As a result, the interaction of the H+ ions with collective modes makes a tiny suprathermal fraction of the H+ population appear. Our results hold for similar transitions in metal deuterides, too. A violation of an -insofar undisputed-upper bound on hydrogen loading follows.

  18. Mode conversion in metal-insulator-metal waveguide with a shifted cavity

    Science.gov (United States)

    Wang, Yueke; Yan, Xin

    2018-01-01

    We propose a method, which is utilized to achieve the plasmonic mode conversion in metal-insulator-metal (MIM) waveguide, theoretically. Our proposed structure is composed of bus waveguides and a shifted cavity. The shifted cavity can choose out a plasmonic mode (a- or s-mode) when it is in Fabry-Perot (FP) resonance. The length of the shifted cavity L is carefully chosen, and our structure can achieve the mode conversion between a- and s-mode in the communication region. Besides, our proposed structure can also achieve plasmonic mode-division multiplexing. All the numerical simulations are carried on by the finite element method to verify our design.

  19. High-pressure electron-resonance studies of electronic, magnetic, and structural phase transitions. Progress report

    International Nuclear Information System (INIS)

    Pifer, J.H.; Croft, M.C.

    1983-01-01

    Research is described in development of a high-pressure electron-resonance probe capable of operating down to 1.5 0 K temperatures. The apparatus has been used to measure the EPR of a sample of DPPH at room temperature and zero pressure. EPR has been used to measure valence field instabilities in alloy systems. Studies have been done on metal-insulator transitions at high pressure, and are briefly described

  20. Ultrafast Dynamics in Vanadium Dioxide: Separating Spatially Segregated Mixed Phase Dynamics in the Time-domain

    Science.gov (United States)

    Hilton, David

    2011-10-01

    In correlated electronic systems, observed electronic and structural behavior results from the complex interplay between multiple, sometimes competing degrees-of- freedom. One such material used to study insulator-to-metal transitions is vanadium dioxide, which undergoes a phase transition from a monoclinic-insulating phase to a rutile-metallic phase when the sample is heated to 340 K. The major open question with this material is the relative influence of this structural phase transition (Peirels transition) and the effects of electronic correlations (Mott transition) on the observed insulator-to-metal transition. Answers to these major questions are complicated by vanadium dioxide's sensitivity to perturbations in the chemical structure in VO2. For example, related VxOy oxides with nearly a 2:1 ratio do not demonstrate the insulator-to- metal transition, while recent work has demonstrated that W:VO2 has demonstrated a tunable transition temperature controllable with tungsten doping. All of these preexisting results suggest that the observed electronic properties are exquisitely sensitive to the sample disorder. Using ultrafast spectroscopic techniques, it is now possible to impulsively excite this transition and investigate the photoinduced counterpart to this thermal phase transition in a strongly nonequilibrium regime. I will discuss our recent results studying the terahertz-frequency conductivity dynamics of this photoinduced phase transition in the poorly understood near threshold temperature range. We find a dramatic softening of the transition near the critical temperature, which results primarily from the mixed phase coexistence near the transition temperature. To directly study this mixed phase behavior, we directly study the nucleation and growth rates of the metallic phase in the parent insulator using non-degenerate optical pump-probe spectroscopy. These experiments measure, in the time- domain, the coexistent phase separation in VO2 (spatially

  1. Transport of a Bose gas in 1D disordered lattices at the fluid-insulator transition.

    Science.gov (United States)

    Tanzi, Luca; Lucioni, Eleonora; Chaudhuri, Saptarishi; Gori, Lorenzo; Kumar, Avinash; D'Errico, Chiara; Inguscio, Massimo; Modugno, Giovanni

    2013-09-13

    We investigate the momentum-dependent transport of 1D quasicondensates in quasiperiodic optical lattices. We observe a sharp crossover from a weakly dissipative regime to a strongly unstable one at a disorder-dependent critical momentum. In the limit of nondisordered lattices the observations suggest a contribution of quantum phase slips to the dissipation. We identify a set of critical disorder and interaction strengths for which such critical momentum vanishes, separating a fluid regime from an insulating one. We relate our observation to the predicted zero-temperature superfluid-Bose glass transition.

  2. High transition temperature superconducting integrated circuit

    International Nuclear Information System (INIS)

    DiIorio, M.S.

    1985-01-01

    This thesis describes the design and fabrication of the first superconducting integrated circuit capable of operating at over 10K. The primary component of the circuit is a dc SQUID (Superconducting QUantum Interference Device) which is extremely sensitive to magnetic fields. The dc SQUID consists of two superconductor-normal metal-superconductor (SNS) Josephson microbridges that are fabricated using a novel step-edge process which permits the use of high transition temperature superconductors. By utilizing electron-beam lithography in conjunction with ion-beam etching, very small microbridges can be produced. Such microbridges lead to high performance dc SQUIDs with products of the critical current and normal resistance reaching 1 mV at 4.2 K. These SQUIDs have been extensively characterized, and exhibit excellent electrical characteristics over a wide temperature range. In order to couple electrical signals into the SQUID in a practical fashion, a planar input coil was integrated for efficient coupling. A process was developed to incorporate the technologically important high transition temperature superconducting materials, Nb-Sn and Nb-Ge, using integrated circuit techniques. The primary obstacles were presented by the metallurgical idiosyncrasies of the various materials, such as the need to deposit the superconductors at elevated temperatures, 800-900 0 C, in order to achieve a high transition temperature

  3. Systematic prediction of high-pressure melting curves of transition metals

    International Nuclear Information System (INIS)

    Hieu, Ho Khac

    2014-01-01

    The pressure effects on melting temperatures of transition metals have been studied based on the combination of the modified Lindemann criterion with statistical moment method in quantum statistical mechanics. Numerical calculations have been performed for five transition metals including Cu, Pd, Pt, Ni, and Mn up to pressure 100 GPa. Our results are in good and reasonable agreements with available experimental data. This approach gives us a relatively simple method for qualitatively calculating high-pressure melting temperature. Moreover, it can be used to verify future experimental and theoretical works. This research proposes the potential of the combination of statistical moment method and the modified Lindemann criterion on predicting high-pressure melting of materials.

  4. Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2018-04-01

    Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  5. Integration of thermal insulation coating and moving-air-cavity in a cool roof system for attic temperature reduction

    International Nuclear Information System (INIS)

    Yew, M.C.; Ramli Sulong, N.H.; Chong, W.T.; Poh, S.C.; Ang, B.C.; Tan, K.H.

    2013-01-01

    Highlights: • A novel integrated cool roof system for attic temperature reduction is introduced. • 13 °C temperature reduction achieved due to its efficient heat transfer mechanism. • Aluminium tube cavity of the roof is able to reduce the attic temperature. • This positive result is due to its efficient heat reflection and hot air rejection. • Thermal insulation coating incorporates the usage of eggshell waste as bio-filler. - Abstract: Cool roof systems play a significant role in enhancing the comfort level of occupants by reducing the attic temperature of the building. Heat transmission through the roof can be reduced by applying thermal insulation coating (TIC) on the roof and/or installing insulation under the roof of the attic. This paper focuses on a TIC integrated with a series of aluminium tubes that are installed on the underside of the metal roof. In this study, the recycled aluminium cans were arranged into tubes that act as a moving-air-cavity (MAC). The TIC was formulated using titanium dioxide pigment with chicken eggshell (CES) waste as bio-filler bound together by a polyurethane resin binder. The thermal conductivity of the thermal insulation paint was measured using KD2 Pro Thermal Properties Analyzer. Four types of cool roof systems were designed and the performances were evaluated. The experimental works were carried out indoors by using halogen light bulbs followed by comparison of the roof and attic temperatures. The temperature of the surrounding air during testing was approximately 27.5 °C. The cool roof that incorporated both TIC and MAC with opened attic inlet showed a significant improvement with a reduction of up to 13 °C (from 42.4 °C to 29.6 °C) in the attic temperature compared to the conventional roof system. The significant difference in the results is due to the low thermal conductivity of the thermal insulation paint (0.107 W/mK) as well as the usage of aluminium tubes in the roof cavity that was able to transfer

  6. Defect-induced local variation of crystal phase transition temperature in metal-halide perovskites.

    Science.gov (United States)

    Dobrovolsky, Alexander; Merdasa, Aboma; Unger, Eva L; Yartsev, Arkady; Scheblykin, Ivan G

    2017-06-26

    Solution-processed organometal halide perovskites are hybrid crystalline semiconductors highly interesting for low-cost and efficient optoelectronics. Their properties are dependent on the crystal structure. Literature shows a variety of crystal phase transition temperatures and often a spread of the transition over tens of degrees Kelvin. We explain this inconsistency by demonstrating that the temperature of the tetragonal-to-orthorhombic phase transition in methylammonium lead triiodide depends on the concentration and nature of local defects. Phase transition in individual nanowires was studied by photoluminescence microspectroscopy and super-resolution imaging. We propose that upon cooling from 160 to 140 K, domains of the crystal containing fewer defects stay in the tetragonal phase longer than highly defected domains that readily transform to the high bandgap orthorhombic phase at higher temperatures. The existence of relatively pure tetragonal domains during the phase transition leads to drastic photoluminescence enhancement, which is inhomogeneously distributed across perovskite microcrystals.Understanding crystal phase transition in materials is of fundamental importance. Using luminescence spectroscopy and super-resolution imaging, Dobrovolsky et al. study the transition from the tetragonal to orthorhombic crystal phase in methylammonium lead triiodide nanowires at low temperature.

  7. Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

    KAUST Repository

    Dong, Yao-Jun

    2017-10-29

    Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

  8. Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

    KAUST Repository

    Dong, Yao-Jun; Belabbes, Abderrezak; Manchon, Aurelien

    2017-01-01

    Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

  9. Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

    Science.gov (United States)

    Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

    2018-03-01

    In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

  10. Melting temperature and structural transformation of some rare-earth metals

    International Nuclear Information System (INIS)

    Vu Van Hung; Hoang Van Tich; Dang Thanh Hai

    2009-01-01

    the pressure dependence of the melting temperatures of rare-earth metals is studied using the equation of states derived from the statistical moment (SMM). SMM studies were carried out order to calculate the Helmholtz free energy of hcp, bcc Dy and fcc, bcc Ce metals at a wide range of temperatures. the stable phase of Dy and Ce metals can be determined by examining the Helmholtz free energy at a given temperature, i, e. the phase that gives the lowest free energy will be stable. For example, we found that at T lower than 1750 K the hcp Dy metal is stable. At T higher than 1750 K the bcc Dy metal is also stable. Thus 1750 K marks the phase transition temperature of Dy metal. These findings are in agreement with previous experiments. (author)

  11. Converting topological insulators into topological metals within the tetradymite family

    Science.gov (United States)

    Chen, K.-W.; Aryal, N.; Dai, J.; Graf, D.; Zhang, S.; Das, S.; Le Fèvre, P.; Bertran, F.; Yukawa, R.; Horiba, K.; Kumigashira, H.; Frantzeskakis, E.; Fortuna, F.; Balicas, L.; Santander-Syro, A. F.; Manousakis, E.; Baumbach, R. E.

    2018-04-01

    We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula T2C h2P n , obtained as a modification to the well-known topological insulator binaries Bi2(Se,Te ) 3 by replacing one chalcogen (C h ) with a pnictogen (P n ) and Bi with the tetravalent transition metals T = Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first-principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi2Se3 , where the surface Dirac bands are at the Γ point, for (Zr,Hf ) 2Te2 (P,As) there are Dirac cones of strong topological character around both the Γ ¯ and M ¯ points, which are above and below the Fermi energy, respectively. For Ti2Te2P , the surface state is predicted to exist only around the M ¯ point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle-resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).

  12. Electrical resistivity of ceramic-metal composite materials in the percolation region: application in crucibles for induction furnaces; Resistividade eletrica de materiais compositos do tipo ceramica-metal na regiao de percolacao: aplicacao em cadinhos para fornos de inducao

    Energy Technology Data Exchange (ETDEWEB)

    Sene, Frank Ferrer

    1997-07-01

    Ceramic composite materials were produced by mixing powders of Partially Stabilized (PSZ) with titanium, niobium or nickel, and cristobalite with titanium. Pellets were produced by uniaxially pressing the material followed by cold isostatic pressing and finally sintering at 1600 deg C for 1,5 hours in argon. The metal content was varied in the range of 0-40 volume percent (v/o). Electrical resistivity measurements were performed in the temperature range of 25 - 700 deg C. Samples containing metallic inclusions above 25 v/o show the predominance of electronic type conducting. For samples with metallic inclusion below 25 v/o, a typically ionic conduction behavior has been observed. PSZ-Ti and PSZ-Ni samples containing 25 v/o of metallic inclusions show an insulator - conductor transition in a given temperature range. Cristobalite samples containing 30 v/o of titanium show a conductor - insulator transition also in a specific temperature range. Tests performed in an induction furnace showed that samples containing metallic inclusions above 25 v/o had self-heated when exposed to electro magnetic fields in the range of radio frequency (r.f.) Crucibles of PSZ-Ti were made by slip casting followed by sintering at 1600 deg C for 1.5 hours in argon. These crucibles were exposed to electromagnetic fields in the r.f. range and the maximum temperature reached was 1350 deg C. Microstructure characterization was performed on those materials by X-ray diffraction, EDS, optical and scanning electron microscopy. (author)

  13. Phonon scattering in metallic glasses

    International Nuclear Information System (INIS)

    Black, J.L.

    1979-01-01

    The purpose of this article is to review some recent theoretical and experimental developments in the study of metallic glasses at temperatures near or below 1K. In this temperature regime, it appears that practically all glasses, whether metallic or insulating, behave in a similar fashion. The fact that such similarities occur, despite substantial structural differences between metallic and insulating glasses, constitutes a major theoretical challenge. This challenge, however, is not directly addressed in what follows. Instead, the evidence for universal behavior and the theory which is necessary to understand this evidence are emphasized. It turns out that most of this evidence involves a comparison of phonon scattering in metallic glasses with its counterpart in insulating glasses

  14. Pressure-driven phase transitions in TiOCl and the family (Ca, Sr, Ba)Fe2As2

    International Nuclear Information System (INIS)

    Zhang YuZhong; Opahle, Ingo; Jeschke, Harald O; ValentI, Roser

    2010-01-01

    Motivated by recent experimental measurements on pressure-driven phase transitions in Mott insulators as well as the new iron pnictide superconductors, we show that first principles Car-Parrinello molecular dynamics calculations are a powerful method to describe the microscopic origin of such transitions. We present results for (i) the pressure-induced insulator to metal phase transition in the prototypical Mott insulator TiOCl as well as (ii) the pressure-induced structural and magnetic phase transitions in the family of correlated metals AFe 2 As 2 (A = Ca, Sr, Ba). Comparison of our predictions with existing experimental results yields very good agreement.

  15. Spectroscopic study of native defects in the semiconductor to metal phase transition in V2O5 nanostructure

    Science.gov (United States)

    Basu, Raktima; Dhara, Sandip

    2018-04-01

    Vanadium is a transition metal with multiple oxidation states and V2O5 is the most stable form among them. Besides catalysis, chemical sensing, and photo-chromatic applications, V2O5 is also reported to exhibit a semiconductor to metal transition (SMT) at a temperature range of 530-560 K. Even though there are debates in using the term "SMT" for V2O5, the metallic behavior above the transition temperature and its origin are of great interest in the scientific community. In this study, V2O5 nanostructures were deposited on a SiO2/Si substrate by the vapour transport method using Au as a catalyst. Temperature dependent electrical measurement confirms the SMT in V2O5 without any structural change. Temperature dependent photoluminescence analysis proves the appearance of oxygen vacancy related peaks due to reduction of V2O5 above the transition temperature, as also inferred from temperature dependent Raman spectroscopic studies. The newly evolved defect levels in the V2O5 electronic structure with increasing temperature are also understood from the downward shift of the bottom most split-off conduction bands due to breakdown of pdπ bonds leading to metallic behavior in V2O5 above the transition temperature.

  16. Deep learning the quantum phase transitions in random two-dimensional electron systems

    International Nuclear Information System (INIS)

    Ohtsuki, Tomoki; Ohtsuki, Tomi

    2016-01-01

    Random electron systems show rich phases such as Anderson insulator, diffusive metal, quantum Hall and quantum anomalous Hall insulators, Weyl semimetal, as well as strong/weak topological insulators. Eigenfunctions of each matter phase have specific features, but owing to the random nature of systems, determining the matter phase from eigenfunctions is difficult. Here, we propose the deep learning algorithm to capture the features of eigenfunctions. Localization-delocalization transition, as well as disordered Chern insulator-Anderson insulator transition, is discussed. (author)

  17. He atom surface spectroscopy: Surface lattice dynamics of insulators, metals and metal overlayers

    International Nuclear Information System (INIS)

    1990-01-01

    During the first three years of this grant (1985--1988) the effort was devoted to the construction of a state-of-the-art He atom scattering (HAS) instrument which would be capable of determining the structure and dynamics of metallic, semiconductor or insulator crystal surfaces. The second three year grant period (1988--1991) has been dedicated to measurements. The construction of the instrument went better than proposed; it was within budget, finished in the proposed time and of better sensitivity and resolution than originally planned. The same success has been carried over to the measurement phase where the concentration has been on studies of insulator surfaces, as discussed in this paper. The experiments of the past three years have focused primarily on the alkali halides with a more recent shift to metal oxide crystal surfaces. Both elastic and inelastic scattering experiments were carried out on LiF, NaI, NaCl, RbCl, KBr, RbBr, RbI, CsF, CsI and with some preliminary work on NiO and MgO

  18. Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

    1994-01-01

    Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

  19. Microwave-assisted synthesis of transition metal phosphide

    Science.gov (United States)

    Viswanathan, Tito

    2014-12-30

    A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.

  20. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  1. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  2. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  3. Radiation detection at very low temperature. DRTBT 1991 Aussois - Course collection

    International Nuclear Information System (INIS)

    Salce, B.; Godfrin, H.; Dumoulin, L.; Garoche, Pierre; Pannetier, B.; Equer, B.; Hubert, PH.; Urbina, C.; Lamarre, J.M.; Brison, J.P.; Lesueur, D.; Bret, J.L.; Ayela, F.; Coron, N.; Gonzalez-Mestres, L.

    1991-12-01

    This publication gather several courses which propose or address: Thermal conduction, Kapitza resistance, Metal-insulator transition, Thermal properties and specific heat at low temperature, Thermometry, Low temperature superconductors, Defects due to irradiations in solids, Semiconducting detectors, Techniques of protection of a measurement assembly at low temperatures against perturbations, Noise reduction by impedance matching converter at low temperature, Low noise electronics and measurement, Low radio-activities, SQUID and electrometer, Results and expectations related to bolometers, Infrared and sub-millimetre radiation in astrophysics, Neutrinos, dark matter and heavy ions

  4. Quantum-based Atomistic Simulation of Transition Metals

    International Nuclear Information System (INIS)

    Moriarty, J A; Benedict, L X; Glosli, J N; Hood, R Q; Orlikowski, D A; Patel, M V; Soderlind, P; Streitz, F H; Tang, M; Yang, L H

    2005-01-01

    First-principles generalized pseudopotential theory (GPT) provides a fundamental basis for transferable multi-ion interatomic potentials in d-electron transition metals within density-functional quantum mechanics. In mid-period bcc metals, where multi-ion angular forces are important to structural properties, simplified model GPT or MGPT potentials have been developed based on canonical d bands to allow analytic forms and large-scale atomistic simulations. Robust, advanced-generation MGPT potentials have now been obtained for Ta and Mo and successfully applied to a wide range of structural, thermodynamic, defect and mechanical properties at both ambient and extreme conditions of pressure and temperature. Recent algorithm improvements have also led to a more general matrix representation of MGPT beyond canonical bands allowing increased accuracy and extension to f-electron actinide metals, an order of magnitude increase in computational speed, and the current development of temperature-dependent potentials

  5. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    International Nuclear Information System (INIS)

    Richard T. Scalettar; Warren E. Pickett

    2005-01-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals

  6. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scalettar, Richard T.; Pickett, Warren E.

    2004-07-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

  7. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Richard T. Scalettar; Warren E. Pickett

    2005-08-02

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

  8. Spin dynamics of the Kondo insulator CeNiSn approaching the metallic phase

    DEFF Research Database (Denmark)

    Schröder, A.; Aeppli, G.; Mason, T.E.

    1997-01-01

    The spin dynamics of Kondo insulators has been studied by high-resolution magnetic neutron spectroscopy at a triple-axes spectrometer on CeNi1-xCuxSn single crystals using a vertical 9 T magnet. While upon doping (x = 0.13) the spin gap of the Kondo insulator CeNiSn collapses at the transition to...

  9. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

    Science.gov (United States)

    Farajollahpour, T; Jafari, S A

    2018-01-10

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  10. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

    Science.gov (United States)

    Farajollahpour, T.; Jafari, S. A.

    2018-01-01

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  11. High Temperature Electrical Insulation Materials for Space Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA's future space science missions cannot be realized without the state of the art high temperature insulation materials of which higher working temperature, high...

  12. Optical probing of quantum Hall effect of composite fermions and of the liquid-insulator transition

    International Nuclear Information System (INIS)

    Rossella, F; Bellani, V; Dionigi, F; Amado, M; Diez, E; Kowalik, K; Biasiol, G; Sorba, L

    2011-01-01

    In the photoluminescence spectra of a two-dimensional electron gas in the fractional quantum Hall regime we observe the states at filling factors ν = 4/5, 5/7, 4/11 and 3/8 as clear minima in the intensity or area emission peak. The first three states are described as interacting composite fermions in fractional quantum Hall regime. The minimum in the intensity at ν 3/8, which is not explained within this picture, can be an evidence of a suppression of the screening of the Coulomb interaction among the effective quasi-particles involved in this intriguing state. The magnetic field energy dispersion at very low temperatures is also discussed. At low field the emission follows a Landau dispersion with a screened magneto-Coulomb contribution. At intermediate fields the hidden symmetry manifests. At high field above ν = 1/3 the electrons correlate into an insulating phase, and the optical emission behaviour at the liquid-insulator transition is coherent with a charge ordering driven by Coulomb correlations.

  13. Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, Alexey Yu.; Silevitch, Daniel M.; Proslier, Thomas; Postolova, Svetlana V.; Burdastyh, Maria V.; Gutakovskii, Anton K.; Rosenbaum, Thomas F.; Vinokur, Valerii V.; Baturina, Tatyana I.

    2018-03-06

    Three decades after the prediction of charge-vortex duality in the critical vicinity of the two-dimensional superconductor-insulator transition (SIT), one of the fundamental implications of this duality-the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that should occur on the insulating side of the SIT-has remained unobserved. The dual picture of the process points to the existence of a superinsulating state endowed with zero conductance at finite temperature. Here, we report the observation of the charge BKT transition on the insulating side of the SIT in 10 nm thick NbTiN films, identified by the BKT critical behavior of the temperature and magnetic field dependent resistance, and map out the magnetic-field dependence of the critical temperature of the charge BKT transition. Finally, we ascertain the effects of the finite electrostatic screening length and its divergence at the magnetic field-tuned approach to the superconductor-insulator transition.

  14. Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

    Science.gov (United States)

    Elovaara, Tomi; Huhtinen, Hannu; Majumdar, Sayani; Paturi, Petriina

    2016-09-01

    We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

  15. Uncertainty relations and topological-band insulator transitions in 2D gapped Dirac materials

    International Nuclear Information System (INIS)

    Romera, E; Calixto, M

    2015-01-01

    Uncertainty relations are studied for a characterization of topological-band insulator transitions in 2D gapped Dirac materials isostructural with graphene. We show that the relative or Kullback–Leibler entropy in position and momentum spaces, and the standard variance-based uncertainty relation give sharp signatures of topological phase transitions in these systems. (paper)

  16. Phase controlled metal–insulator transition in multi-leg quasiperiodic optical lattices

    International Nuclear Information System (INIS)

    Maiti, Santanu K.; Sil, Shreekantha; Chakrabarti, Arunava

    2017-01-01

    A tight-binding model of a multi-leg ladder network with a continuous quasiperiodic modulation in both the site potential and the inter-arm hopping integral is considered. The model mimics optical lattices where ultra-cold fermionic or bosonic atoms are trapped in double well potentials. It is observed that, the relative phase difference between the on-site potential and the inter-arm hopping integral, which can be controlled by the tuning of the interfering laser beams trapping the cold atoms, can result in a mixed spectrum of one or more absolutely continuous subband(s) and point like spectral measures. This opens up the possibility of a re-entrant metal–insulator transition. The subtle role played by the relative phase difference mentioned above is revealed, and we corroborate it numerically by working out the multi-channel electronic transmission for finite two-, and three-leg ladder networks. The extension of the calculation beyond the two-leg case is trivial, and is discussed in the work. - Graphical abstract: ▪ - Highlights: • Phase controlled metal–insulator transition is discussed. • An analytical prescription is given to understand MI transition. • Our work provides a way of designing experiments involving laser beams.

  17. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  18. Dimensional crossover and cold-atom realization of gapless and semi-metallic Mott insulating phases

    Science.gov (United States)

    Orth, Peter P.; Scheurer, Mathias; Rachel, Stephan

    2014-03-01

    We propose a realistic cold-atom setup which allows for a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator phase by simply tuning the hopping between the layers. We further employ cluster slave-rotor mean-field theory to study the effect of additional Hubbard onsite interactions that give rise to various spin liquid-like phases such as gapless and semi-metallic Mott insulating states.

  19. Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

    Directory of Open Access Journals (Sweden)

    Kenichi Miyazaki

    2016-05-01

    Full Text Available We investigated the effects of chromium (Cr and niobium (Nb co-doping on the temperature coefficient of resistance (TCR and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2 films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  20. Localized versus collective behaviour of d-electrons in transition metal oxide systems of perovskite systems

    Energy Technology Data Exchange (ETDEWEB)

    Rao, C N.R. [Indian Inst. of Tech., Kanpur

    1974-12-01

    The behavior of d-electrons in perovskites of the type LnZO/sub 3/ (Z = trivalent transition metal ion and Ln = rare earth or yttrium) depends on the spin configuration of the transition metal ion. LaTiO/sub 3/ and LaNiO/sub 3/ with low-spin transition metal ions (S = 1/2) are metallic while LaCrO/sub 3/, LnMnO/sub 3/ and LnFeO/sub 3/ with high-spin ions are poor semiconductors exhibiting localized behavior of d-electrons. In rare earth cobaltites, the cobalt ions are present mainly in the diamagnetic low-spin Co /sup III/ state at low temperatures. The Co/sup III/ ions transform to high-spin Co/sup 3 +/ ions with increase in temperature. At higher temperatures, there is electron-transfer from Co/sup 3 +/ to Co/sup III/ions producing intermetallic states. Spin-state transitions are seen in these cobaltites in the range 150-870/sup 0/K. At high temperatures, the cobaltites show evidence for localized-itinerant electron transitions. In La/sub 1-x/ Sr/sub x/CoO/sub 3/ there is onset of ferromagnetism at x > 0.125, at which point there is a structural dicontinuity and electrons become itinerant. The composition with x = 0.5 is metallic and T/sub c/ = 230/sup 0/K. The ferromagnetic component in La/sub 1-x/Sr/sub x/ CoO/sub 3/ increases with x in the range 0.125-0.50. Catalytic properties of rare earth cobaltites appear to be related to the spin state equilibria. (auth)

  1. Kinetics of self-interstitial migration in bcc and fcc transition metals

    Science.gov (United States)

    Bukkuru, S.; Bhardwaj, U.; Srinivasa Rao, K.; Rao, A. D. P.; Warrier, M.; Valsakumar, M. C.

    2018-03-01

    Radiation damage is a multi-scale phenomenon. A thorough understanding of diffusivities and the migration energies of defects is a pre-requisite to quantify the after-effects of irradiation. We investigate the thermally activated mobility of self-interstitial atom (SIA) in bcc transition metals Fe, Mo, Nb and fcc transition metals Ag, Cu, Ni, Pt using molecular dynamics (MD) simulations. The self-interstitial diffusion involves various mechanisms such as interstitialcy, dumbbell or crowdion mechanisms. Max-Space Clustering (MSC) method has been employed to identify the interstitial and its configuration over a wide range of temperature. The self-interstitial diffusion is Arrhenius like, however, there is a slight deviation at high temperatures. The migration energies, pre-exponential factors of diffusion and jump-correlation factors, obtained from these simulations can be used as inputs to Monte Carlo simulations of defect transport. The jump-correlation factor shows the degree of preference of rectilinear or rotational jumps. We obtain the average jump-correlation factor of 1.4 for bcc metals and 0.44 for fcc metals. It indicates that rectilinear jumps are preferred in bcc metals and rotational jumps are preferred in fcc metals.

  2. Gas-controlled dynamic vacuum insulation with gas gate

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  3. Resistive transition in disordered superconductors with varying intergrain coupling

    International Nuclear Information System (INIS)

    Ponta, L; Carbone, A; Gilli, M

    2011-01-01

    The effect of disorder is investigated in granular superconductive materials with strong- and weak-links. The transition is controlled by the interplay of the tunneling g and intragrain g intr conductances, which depend on the strength of the intergrain coupling. For g intr , the transition first involves the grain boundary, while for g ∼ g intr the transition occurs into the whole grain. The different intergrain couplings are considered by modeling the superconducting material as a disordered network of Josephson junctions. Numerical simulations show that on increasing the disorder, the resistive transition occurs for lower temperatures and the curve broadens. These features are enhanced in disordered superconductors with strong-links. The different behavior is further checked by estimating the average network resistance for weak- and strong-links in the framework of the effective medium approximation theory. These results may shed light on long standing puzzles such as: (i) enhancement of the superconducting transition temperature of many metals in the granular states; (ii) suppression of superconductivity in homogeneously disordered films compared to standard granular systems close to the metal-insulator transition; (iii) enhanced degradation of superconductivity by doping and impurities in strongly linked materials, such as magnesium diboride, compared to weakly linked superconductors, such as cuprates.

  4. Interaction effects and quantum phase transitions in topological insulators

    International Nuclear Information System (INIS)

    Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos

    2010-01-01

    We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.

  5. Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2018-01-01

    The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

  6. Dielectric and diamagnetic susceptibilities near percolative superconductor-insulator transitions.

    Science.gov (United States)

    Loh, Yen Lee; Karki, Pragalv

    2017-10-25

    Coarse-grained superconductor-insulator composites exhibit a superconductor-insulator transition governed by classical percolation, which should be describable by networks of inductors and capacitors. We study several classes of random inductor-capacitor networks on square lattices. We present a unifying framework for defining electric and magnetic response functions, and we extend the Frank-Lobb bond-propagation algorithm to compute these quantities by network reduction. We confirm that the superfluid stiffness scales approximately as [Formula: see text] as the superconducting bond fraction p approaches the percolation threshold p c . We find that the diamagnetic susceptibility scales as [Formula: see text] below percolation, and as [Formula: see text] above percolation. For models lacking self-capacitances, the electric susceptibility scales as [Formula: see text]. Including a self-capacitance on each node changes the critical behavior to approximately [Formula: see text].

  7. CPA theory of the magnetization in rare earth transition metal alloys

    International Nuclear Information System (INIS)

    Szpunar, B.; Lindgaard, P.A.

    1976-11-01

    Calculations were made of the magnetic moment per atom of the transition metal and the rare earth metal in the intermetallic compounds, Gdsub(1-x)Nisub(x), Gdsub(1-x)Fesub(x), Gdsub(1-x)Cosub(x), and Ysub(1-x)Cosub(x). A simple model of the disordered alloy consisting of spins localized on the rare earth atoms and interacting with a narrow d-band is considered. The magnetic moment of the alloy at zero temperature is calculated within the molecular field and Hartree-Fock approximations. Disorder is treated in the coherent potential approximation. Results are in good agreement with the experimental data obtained for the crystalline and amorphous intermetallic compounds. It is shown that the temperature dependence of the magnetic moments and Curie and ferrimagnetic compensation temperatures can be accounted for by a simple model assuming a RKKY interaction between the rare-earth moments and the transition metal pseudo spin. The interaction is mediated by an effective alloy medium calculated using the CPA theory and elliptic densities of states. (Auth.)

  8. Valley polarized quantum Hall effect and topological insulator phase transitions in silicene

    KAUST Repository

    Tahir, M.; Schwingenschlö gl, Udo

    2013-01-01

    encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address

  9. Extracting and focusing of surface plasmon polaritons inside finite asymmetric metal/insulator/metal structure at apex of optical fiber by subwavelength holes

    Science.gov (United States)

    Oshikane, Yasushi; Murai, Kensuke; Nakano, Motohiro

    2013-09-01

    We have been studied a finite asymmetric metal-insulator-metal (MIM) structure on glass plate for near-future visible light communication (VLC) system with white LED illuminations in the living space (DOI: 10.1117/12.929201). The metal layers are vacuum-evaporated thin silver (Ag) films (around 50 nm and 200 nm, respectively), and the insulator layer (around 150 nm) is composed of magnesium fluoride (MgF2). A characteristic narrow band filtering of the MIM structure at visible region might cause a confinement of intense surface plasmon polaritons (SPPs) at specific monochromatic frequency inside a subwavelength insulator layer of the MIM structure. Central wavelength and depth of such absorption dip in flat spectral reflectance curve is controlled by changing thicknesses of both insulator and thinner metal layers. On the other hand, we have proposed a twin-hole pass-through wave guide for SPPs in thick Ag film (DOI: 10.1117/12.863587). At that time, the twin-hole converted a incoming plane light wave into a pair of channel plasmon polaritons (CPPs), and united them at rear surface of the Ag film. This research is having an eye to extract, guide, and focus the SPPs through a thicker metal layer of the MIM with FIBed subwavelength pass-through holes. The expected outcome is a creation of noble, monochromatic, and tunable fiber probe for scanning near-field optical microscopes (SNOMs) with intense white light sources. Basic experimental and FEM simulation results will be presented.

  10. La0.7Sr0.3MnO3 Thin Films for Magnetic and Temperature Sensors at Room Temperature

    Directory of Open Access Journals (Sweden)

    Sheng Wu

    2012-03-01

    Full Text Available In this paper, the potentialities of the manganese oxide La0.7Sr0.3MnO3 (LSMO for the realization of sensitive room temperature thermometers and magnetic sensors are discussed. LSMO exhibits both a large change of the resistance versus temperature at its metal-to-insulator transition (about 330 K and low field magnetoresistive effects at room temperature. The sensor performances are described in terms of signal-to-noise ratio in the 1 Hz - 100 kHz frequency range. It is shown that due to the very low 1/f noise level, LSMO based sensors can exhibit competitive performances at room temperature.

  11. Two dimensional topological insulator in quantizing magnetic fields

    Science.gov (United States)

    Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

    2018-05-01

    The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

  12. Adsorption and migration of single metal atoms on the calcite (10.4) surface

    International Nuclear Information System (INIS)

    Pinto, H; Haapasilta, V; Lokhandwala, M; Foster, Adam S; Öberg, S

    2017-01-01

    Transition metal atoms are one of the key ingredients in the formation of functional 2D metal organic coordination networks. Additionally, the co-deposition of metal atoms can play an important role in anchoring the molecular structures to the surface at room temperature. To gain control of such processes requires the understanding of adsorption and diffusion properties of the different transition metals on the target surface. Here, we used density functional theory to investigate the adsorption of 3 d (Ti, Cr, Fe, Ni, Cu), 4 d (Zr, Nb, Mo, Pd, Ag) and 5 d (Hf, W, Ir, Pt, Au) transition metal adatoms on the insulating calcite (10.4) surface. We identified the most stable adsorption sites and calculated binding energies and corresponding ground state structures. We find that the preferential adsorption sites are the Ca–Ca bridge sites. Apart from the Cr, Mo, Cu, Ag and Au all the studied metals bind strongly to the calcite surface. The calculated migration barriers for the representative Ag and Fe atoms indicates that the metal adatoms are mobile on the calcite surface at room temperature. Bader analysis suggests that there is no significant charge transfer between the metal adatoms and the calcite surface. (paper)

  13. Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien; Kim, Heung-Sik; Han, Myung Joon; Luo, Wei; Feng, Zhenxing; Upton, Mary; Casa, Diego; Kim, Jungho; Gog, Thomas; Zeng, Zhidan; Cao, Gang; Mao, Ho-kwang; van Veenendaal, Michel

    2016-05-24

    The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr3Ir2O7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

  14. Transition metal borides. Synthesis, characterization and superconducting properties

    International Nuclear Information System (INIS)

    Kayhan, Mehmet

    2013-01-01

    A systematic study was done on the synthesis and superconducting properties of metal rich transition metal borides. Five different binary systems were investigated including the boride systems of niobium, tantalum, molybdenum, tungsten and rhenium. High temperature solid state methods were used in order to synthesize samples of different transition metal borides of the composition M 2 B, MB, M 3 B 2 , MB 2 , and M 2 B 4 . The reactions were carried out in three different furnaces with different sample containers: the electric arc (copper crucible), the high frequency induction furnace (boron nitride, tantalum or glassy carbon crucibles), and the conventional tube furnace (sealed evacuated quartz ampoules). The products obtained were characterized with X-ray powder diffractometry, scanning electron microscopy and energy-dispersive X-ray spectroscopy. Phase analyses and crystal structure refinements using the Rietveld method and based on structure models known from literature were performed. A neutron diffraction measurement was done for W 2 B 4 to allow for a complete crystal structure determination, because of the presence of a heavy element like tungsten and a light element like boron that made it difficult to determine the accurate determination of the boron atom positions and occupancies from X-ray data. A new structure model for W 2 B 4 was proposed. Magnetic measurements in a SQUID magnetometer down to temperatures as low as 1.8 K were performed to several of the products in order to see if the transition metal borides become superconducting at low temperatures, and the results were compared with data from literature. Superconducting properties were found for the following compounds: NbB 2 (T C = 3.5 K), β-MoB (T C = 2.4 K), β-WB (T C = 2.0 K), α-WB (T C = 4.3 K), W 2 B 4 (T C = 5.4 K), Re 7 B 3 (T C = 2.4 K). A relationship between the superconducting properties and the compositional and structural features was discussed for metal diborides. Also it was

  15. Strongly Coupled Magnetic and Electronic Transitions in Multivalent Strontium Cobaltites

    OpenAIRE

    Lee, J. H.; Choi, Woo Seok; Jeen, H.; Lee, H.-J.; Seo, J. H.; Nam, J.; Yeom, M. S.; Lee, H. N.

    2017-01-01

    The topotactic phase transition in SrCoO x (x = 2.5–3.0) makes it possible to reversibly transit between the two distinct phases, i.e. the brownmillerite SrCoO2.5 that is a room-temperature antiferromagnetic insulator (AFM-I) and the perovskite SrCoO3 that is a ferromagnetic metal (FM-M), owing to their multiple valence states. For the intermediate x values, the two distinct phases are expected to strongly compete with each other. With oxidation of SrCoO2.5, however, it has been conjectured t...

  16. Theory of strain-controlled magnetotransport and stabilization of the ferromagnetic insulating phase in manganite thin films.

    Science.gov (United States)

    Mukherjee, Anamitra; Cole, William S; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-12

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  17. High-pressure phase transition of alkali metal-transition metal deuteride Li2PdD2

    Science.gov (United States)

    Yao, Yansun; Stavrou, Elissaios; Goncharov, Alexander F.; Majumdar, Arnab; Wang, Hui; Prakapenka, Vitali B.; Epshteyn, Albert; Purdy, Andrew P.

    2017-06-01

    A combined theoretical and experimental study of lithium palladium deuteride (Li2PdD2) subjected to pressures up to 50 GPa reveals one structural phase transition near 10 GPa, detected by synchrotron powder x-ray diffraction, and metadynamics simulations. The ambient-pressure tetragonal phase of Li2PdD2 transforms into a monoclinic C2/m phase that is distinct from all known structures of alkali metal-transition metal hydrides/deuterides. The structure of the high-pressure phase was characterized using ab initio computational techniques and from refinement of the powder x-ray diffraction data. In the high-pressure phase, the PdD2 complexes lose molecular integrity and are fused to extended [PdD2]∞ chains. The discovered phase transition and new structure are relevant to the possible hydrogen storage application of Li2PdD2 and alkali metal-transition metal hydrides in general.

  18. Thermal insulation layer for the vacuum containers of a thermonuclear device

    International Nuclear Information System (INIS)

    Nishikawa, Masana; Yamada, Masao; Kameari, Akihisa; Niikura, Setsuo.

    1980-01-01

    Purpose: To prevent temperature rise of a thermal insulation layer for a vacuum container of a thermonuclear device higher than allowable value when irradiated by neutron by constructing the layer of a cooling unit in thermal insulation material. Constitution: A metal plate attached with cooling pipes is buried in a thermal insulation material forming a thermal insulation layer to form the layer provided between a vacuum container of a thermonuclear device and a shield. (Yoshihara, H.)

  19. Combined Heat Transfer in High-Porosity High-Temperature Fibrous Insulations: Theory and Experimental Validation

    Science.gov (United States)

    Daryabeigi, Kamran; Cunnington, George R.; Miller, Steve D.; Knutson, Jeffry R.

    2010-01-01

    Combined radiation and conduction heat transfer through various high-temperature, high-porosity, unbonded (loose) fibrous insulations was modeled based on first principles. The diffusion approximation was used for modeling the radiation component of heat transfer in the optically thick insulations. The relevant parameters needed for the heat transfer model were derived from experimental data. Semi-empirical formulations were used to model the solid conduction contribution of heat transfer in fibrous insulations with the relevant parameters inferred from thermal conductivity measurements at cryogenic temperatures in a vacuum. The specific extinction coefficient for radiation heat transfer was obtained from high-temperature steady-state thermal measurements with large temperature gradients maintained across the sample thickness in a vacuum. Standard gas conduction modeling was used in the heat transfer formulation. This heat transfer modeling methodology was applied to silica, two types of alumina, and a zirconia-based fibrous insulation, and to a variation of opacified fibrous insulation (OFI). OFI is a class of insulations manufactured by embedding efficient ceramic opacifiers in various unbonded fibrous insulations to significantly attenuate the radiation component of heat transfer. The heat transfer modeling methodology was validated by comparison with more rigorous analytical solutions and with standard thermal conductivity measurements. The validated heat transfer model is applicable to various densities of these high-porosity insulations as long as the fiber properties are the same (index of refraction, size distribution, orientation, and length). Furthermore, the heat transfer data for these insulations can be obtained at any static pressure in any working gas environment without the need to perform tests in various gases at various pressures.

  20. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  1. Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

    Science.gov (United States)

    Liu, Bang-Gui

    It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

  2. Vortices and gate-tunable bound states in a topological insulator coupled to superconducting leads

    Science.gov (United States)

    Finck, Aaron; Kurter, C.; Hor, Y. S.; van Harlingen, D. J.

    2014-03-01

    It has been predicted that zero energy Majorana bound states can be found in the core of vortices within topological superconductors. Here, we report on Andreev spectroscopy measurements of the topological insulator Bi2Se3 with a normal metal lead and one or more niobium leads. The niobium induces superconductivity in the Bi2Se3 through the proximity effect, leading to both signatures of Andreev reflection and a prominent re-entrant resistance effect. When a large magnetic field is applied perpendicular to the surface of the Bi2Se3, we observe multiple abrupt changes in the subgap conductance that are accompanied by sharp peaks in the dynamical resistance. These peaks are very sensitive to changes in magnetic field and disappear at temperatures associated with the critical temperature of the induced superconductivity. The appearance of the transitions and peaks can be tuned by a top gate. At high magnetic fields, we also find evidence of gate-tunable states, which can lead to stable zero-bias conductance peaks. We interpret our results in terms of a transition occurring within the proximity effect region of the topological insulator, likely due to the formation of vortices. We acknowledge support from Microsoft Project Q.

  3. Bond and flux-disorder effects on the superconductor-insulator transition of a honeycomb array of Josephson junctions

    Science.gov (United States)

    Granato, Enzo

    2018-05-01

    We study the effects of disorder on the zero-temperature quantum phase transition of a honeycomb array of Josephson junctions in a magnetic field with an average of fo flux quantum per plaquette. Bond disorder due to spatial variations in the Josephson couplings and magnetic flux disorder due to variations in the plaquette areas are considered. The model can describe the superconductor-insulator transition in ultra-thin films with a triangular pattern of nanoholes. Path integral Monte Carlo simulations of the equivalent (2 + 1)-dimensional classical model are used to study the critical behavior and estimate the universal resistivity at the transition. The results show that bond disorder leads to a rounding of the first-order phase transition for fo = 1 / 3 to a continuous transition. For integer fo, the decrease of the critical coupling parameter with flux disorder is significantly different from that of the same model defined on a square lattice. The results are compared with recent experimental observations on nanohole thin films with geometrical disorder and external magnetic field.

  4. A new high-κ Al2O3 based metal-insulator-metal antifuse

    Science.gov (United States)

    Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

    2018-06-01

    In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

  5. Metal-insulator transition and magnetic properties of La - (Ba/Ca) - Mn - O compounds

    International Nuclear Information System (INIS)

    Anbarasu, V.; Manigandan, A.; Sathiyakumar, S.; Jayabalan, K.; Kaliyaperumal, L.K.

    2009-01-01

    The manganite compounds La 2 BaMn (3+x) P y (where x = 0, 0.5 and 1) and La 2 CaMn 3 O y have been prepared for the importance in the field of magneto resistance materials through solid-state reaction technique. From the Powder XRD patterns it was confirmed that both compounds were in single phase and the refined crystal system matches with superconducting perovskite structure and the lattice parameters were calculated as a = 3.892( 6) A, b = 3.899(3) A and c = 11.619(8) A for La 2 BaMn 3 O y ; a = 3.851(3) A, b = 3.891(9) A and c = 11.542(7) A for La 2 CaMn 3 O y . The low temperature resistivity measurement reveals that the compound La 2 BaMn 3 O y exhibiting M - I transition and the transition temperature was found to be 270 K. The study on magnetization nature of the La 2 BaMn 3+x Oy (where x = 0, 0.5 and I) compounds through vibrating sample magnetometer confirms the superparamagnetic nature at room temperature condition where as La 2 CaMn 3 O y exhibits paramagnetic nature. The structural relations between the prepared manganite systems La 2 BaMn 3 O y and La 2 CaMn 3 O y with superconducting perovskite compound LaBa 2 Cu 3 O 7-y was studied with the technological application of magneto resistive property of the prepared compounds. (author)

  6. Transition metal nuclear magnetic resonance

    International Nuclear Information System (INIS)

    Pregosin, P.S.

    1991-01-01

    Transition metal NMR spectroscopy has progressed enormously in recent years. New methods, and specifically solid-state methods and new pulse sequences, have allowed access to data from nuclei with relatively low receptivities with the result that chemists have begun to consider old and new problems, previously unapproachable. Moreover, theory, computational science in particular, now permits the calculation of not just 13 C, 15 N and other light nuclei chemical shifts, but heavy main-group element and transition metals as well. These two points, combined with increasing access to high field pulsed spectrometer has produced a wealth of new data on the NMR transition metals. A new series of articles concerned with measuring, understanding and using the nuclear magnetic resonance spectra of the metals of Group 3-12 is presented. (author)

  7. Ab initio modelling of transition metals in diamond

    International Nuclear Information System (INIS)

    Watkins, M; Mainwood, A

    2003-01-01

    Transition metals (TM) from the first transition series are commonly used as solvent catalysts in the synthesis of diamond by high pressure, high temperature processes. Ab initio calculations on these metals, in finite clusters of tetrahedrally coordinated carbon, enable us to investigate trends in their stability and properties. By carrying out systematic studies of interstitial, substitutional and semi-vacancy TM defects, we show that the electronic structure of the TMs is complicated by the presence of 'dangling bonds' when the TM disrupts the crystal lattice: interstitial defects conform to the Ludwig-Woodbury (LW) model, whilst substitutional and semi-vacancy defects move from approximating the LW model early in the transition series to approaching the vacancy model for the heavier metals. Multi-configurational self-consistent field methods allow genuine many-electron states to be modelled; for neutral interstitial, and all substitutional TMs, the crystal fields are found to exceed the exchange energies in strength. Consequently, low spin states are found for these defects. We find substitutional defects to be the most stable, but that semi-vacancy TMs are very similar in energy to the substitutional defects late in the transition series; interstitial defects are only metastable in diamond. Given appropriate charge compensators neutral and positively charged interstitial TM defects were stable, while negatively charged species appeared to be strongly disfavoured

  8. Strange metals and quantum phase transitions from gauge/gravity duality

    Science.gov (United States)

    Liu, Hong

    2011-03-01

    Metallic materials whose thermodynamic and transport properties differ significantly from those predicted by Fermi liquid theory, so-called non-Fermi liquids, include the strange metal phase of cuprate superconductors, and heavy fermion systems near a quantum phase transition. We use gauge/gravity duality to identify a class of non-Fermi liquids. Their low-energy behavior is governed by a nontrivial infrared fixed point which exhibits non-analytic scaling behavior only in the temporal direction. Some representatives of this class have single-particle spectral functions and transport behavior similar to those of the strange metals, with conductivity inversely proportional to the temperature. Such holographic systems may also exhibit novel ``magnetic instabilities'', where the quantum critical behavior near the transition involves a nontrivial interplay between local and bulk physics, with the local physics again described by a similar infrared fixed point. The resulting quantum phase transitions do not obey the standard Landau-Ginsburg-Wilson paradigm and resemble those of the heavy fermion quantum critical points.

  9. Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime

    OpenAIRE

    Song, Juntao; Prodan, Emil

    2013-01-01

    The conductivity $\\sigma$ and resistivity $\\rho$ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy $E_F$ and temperature $T$ in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is det...

  10. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films.

    Science.gov (United States)

    Oba, M; Nakamura, K; Akiyama, T; Ito, T; Weinert, M; Freeman, A J

    2015-03-13

    The electric-field-induced modification in the Curie temperature of prototypical transition-metal thin films with the perpendicular magnetic easy axis, a freestanding Fe(001) monolayer and a Co monolayer on Pt(111), is investigated by first-principles calculations of spin-spiral structures in an external electric field (E field). An applied E field is found to modify the magnon (spin-spiral formation) energy; the change arises from the E-field-induced screening charge density in the spin-spiral states due to p-d hybridizations. The Heisenberg exchange parameters obtained from the magnon energy suggest an E-field-induced modification of the Curie temperature, which is demonstrated via Monte Carlo simulations that take the magnetocrystalline anisotropy into account.

  11. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  12. Electronic self-organization in layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Ritschel, Tobias

    2015-10-30

    The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures

  13. Development of electrical insulator coatings for fusion power applications

    International Nuclear Information System (INIS)

    Park, J.H.; Domenico, T.; Dragel, G.; Clark, R.

    1995-01-01

    In the design of liquid-metal cooling systems for fusion blanket applications, the corrosion resistance of structural materials and the magnetohydrodynamic (MHD) force and its subsequent influence on thermal hydraulics and corrosion are major concerns. The objective of this study was to develop stable corrosion-resistant electrical insulator coatings at the liquid-metal-structural-material interface, with emphasis on electrically insulating coatings that prevent adverse MHD-generated currents from passing through the structural walls. Vanadium and V-base alloys (V-Ti or V-Ti-Cr) are leading candidate materials for structural applications in fusion reactors. When the system is cooled by liquid metals, insulator coatings are required on piping surfaces in contact with the coolant. Various intermetallic films were produced on V, V-5Ti, and V-20Ti, V-5Cr-5Ti, and V-15Cr-5Ti, and Ti, and on types 304 and 316 stainless steel. The intermetallic layers were developed by exposure of the materials to liquid Li containing 3-5at.% dissolved metallic solute (e.g. Al, Be, Mg, Si, Ca, Pt, and Cr) at temperatures of 416-880 C. Subsequently, electrical insulator coatings were produced by reaction of the reactive layers with dissolved N in liquid Li or by air oxidation under controlled conditions at 600-1000 C. These reactions converted the intermetallic layers to electrically insulating oxide-nitride or oxynitride layers. This coating method is applicable to reactor components. The liquid metal can be used over and over because only the solutes are consumed within the liquid metal. The technique can be applied to various shapes (e.g. inside or outside of tubes, complex geometrical shapes) because the coating is formed by liquid-phase reaction. This paper discusses initial results on the nature of the coatings (composition, thickness, adhesion, surface coverage) and their in situ electrical resistivity characteristics in liquid Li at high temperatures. (orig.)

  14. Insulated skin temperature as a measure of core body temperature for individuals wearing CBRN protective clothing

    International Nuclear Information System (INIS)

    Richmond, V L; Wilkinson, D M; Blacker, S D; Horner, F E; Carter, J; Rayson, M P; Havenith, G

    2013-01-01

    This study assessed the validity of insulated skin temperature (T is ) to predict rectal temperature (T re ) for use as a non-invasive measurement of thermal strain to reduce the risk of heat illness for emergency service personnel. Volunteers from the Police, Fire and Rescue, and Ambulance Services performed role-related tasks in hot (30 °C) and neutral (18 °C) conditions, wearing service specific personal protective equipment. Insulated skin temperature and micro climate temperature (T mc ) predicted T re with an adjusted r 2 = 0.87 and standard error of the estimate (SEE) of 0.19 °C. A bootstrap validation of the equation resulted in an adjusted r 2 = 0.85 and SEE = 0.20 °C. Taking into account the 0.20 °C error, the prediction of T re resulted in a sensitivity and specificity of 100% and 91%, respectively. Insulated skin temperature and T mc can be used in a model to predict T re in emergency service personnel wearing CBRN protective clothing with an SEE of 0.2 °C. However, the model is only valid for T is over 36.5 °C, above which thermal stability is reached between the core and the skin. (paper)

  15. Design of nanoring resonators made of metal-insulator-metal nanostrip waveguides

    International Nuclear Information System (INIS)

    Song, Jun-Hwa; Lee, Hyun-Shik; O, Beom-Hoan; Lee, Seung-Gol; Park, Se-Geun; Lee, El-Hang

    2010-01-01

    We report on the design of nanoring resonators made of metal-insulator-metal (MIM) nanostrip waveguides. The characteristics of the lightwave propagation through the silver-based MIM plasmonic waveguides with an air superstrate are examined. The effective refractive indices, the propagation losses, the bending losses, and the beat lengths are analyzed by using 2D and 3D finite element methods (FEMs). For the optimization of the nanoring resonators, we examined the resonant mode power and the Q factor with respect to the width of the MIM nanostrip and the separation between the ring resonator and the straight waveguide. We obtained an optimized nanoring resonator that had submicron diameters (R = 399 nm) and 3 rd -order resonances at a 1550-nm wavelength. These nanoring resonators will play an important role as the basic building blocks for the realization of nanoscale photonic integrated circuits.

  16. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    Science.gov (United States)

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  17. Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

    Science.gov (United States)

    Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

    2018-05-01

    Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

  18. Metallic hydrogen: The most powerful rocket fuel yet to exist

    Energy Technology Data Exchange (ETDEWEB)

    Silvera, Isaac F [Lyman Laboratory of Physics, Harvard University, Cambridge MA 02138 (United States); Cole, John W, E-mail: silvera@physics.harvard.ed [NASA MSFC, Huntsville, AL 35801 (United States)

    2010-03-01

    Wigner and Huntington first predicted that pressures of order 25 GPa were required for the transition of solid molecular hydrogen to the atomic metallic phase. Later it was predicted that metallic hydrogen might be a metastable material so that it remains metallic when pressure is released. Experimental pressures achieved on hydrogen have been more than an order of magnitude higher than the predicted transition pressure and yet it remains an insulator. We discuss the applications of metastable metallic hydrogen to rocketry. Metastable metallic hydrogen would be a very light-weight, low volume, powerful rocket propellant. One of the characteristics of a propellant is its specific impulse, I{sub sp}. Liquid (molecular) hydrogen-oxygen used in modern rockets has an Isp of {approx}460s; metallic hydrogen has a theoretical I{sub sp} of 1700s. Detailed analysis shows that such a fuel would allow single-stage rockets to enter into orbit or carry economical payloads to the moon. If pure metallic hydrogen is used as a propellant, the reaction chamber temperature is calculated to be greater than 6000 K, too high for currently known rocket engine materials. By diluting metallic hydrogen with liquid hydrogen or water, the reaction temperature can be reduced, yet there is still a significant performance improvement for the diluted mixture.

  19. Magnetic excitations in transition-metal ferromagnets

    International Nuclear Information System (INIS)

    Uemura, Y.J.

    1984-01-01

    A review is given on current neutron scattering experiments at Brookhaven National Laboratory on transition-metal ferromagnets Ni, Fe, Pd 2 MnSn and MnSi. The scattering intensity in constant-energy scans, observed above T/sub c/ in all of these materials, exhibited a clear peak at finite momentum transfers. Using a simple scattering function with double-Lorentzian shape, we demonstrate that this peak is a manifestation of simple diffusive spin fluctuations. Experimental results of several parameters are compared in the context of localized-moment and itinerant-electron pictures. The ratio of spin wave stiffness constant D and transition temperature kT/sub c/ is shown to be a good yardstick for the degree of itinerancy of d-electrons

  20. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    Science.gov (United States)

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-02

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

  1. Low-density to high-density transition in Ce75Al23Si2 metallic glass

    International Nuclear Information System (INIS)

    Zeng, Q S; Lou, H B; Gong, Y; Wang, X D; Jiang, J Z; Fang, Y Z; Wu, F M; Yang, K; Li, A G; Yan, S; Yu, X H; Lathe, C

    2010-01-01

    Using in situ high-pressure x-ray diffraction (XRD), we observed a pressure-induced polyamorphic transition from the low-density amorphous (LDA) state to the high-density amorphous (HDA) state in Ce 75 Al 23 Si 2 metallic glass at about 2 GPa and 300 K. The thermal stabilities of both LDA and HDA metallic glasses were further investigated using in situ high-temperature and high-pressure XRD, which revealed different pressure dependences of the onset crystallization temperature (T x ) between them with a turning point at about 2 GPa. Compared with Ce 75 Al 25 metallic glass, minor Si doping shifts the onset polyamorphic transition pressure from 1.5 to 2 GPa and obviously stabilizes both LDA and HDA metallic glasses with higher T x and changes their slopes dT x /dP. The results obtained in this work reveal another polyamorphous metallic glass system by minor alloying (e.g. Si), which could modify the transition pressure and also properties of LDA and HDA metallic glasses. The minor alloying effect reported here is valuable for the development of more polyamorphous metallic glasses, even multicomponent bulk metallic glasses with modified properties, which will trigger more investigations in this field and improve our understanding of polyamorphism and metallic glasses.

  2. VO2 microcrystals as an advanced smart window material at semiconductor to metal transition

    Science.gov (United States)

    Basu, Raktima; Magudapathy, P.; Sardar, Manas; Pandian, Ramanathaswamy; Dhara, Sandip

    2017-11-01

    Textured VO2(0 1 1) microcrystals are grown in the monoclinic, M1 phase which undergoes a reversible first order semiconductor to metal transition (SMT) accompanied by a structural phase transition to rutile tetragonal, R phase. Around the phase transition, VO2 also experiences noticeable change in its optical and electrical properties. A change in color of the VO2 micro crystals from white to cyan around the transition temperature is observed, which is further understood by absorption of red light using temperature dependent ultraviolet-visible spectroscopic analysis and photoluminescence studies. The absorption of light in the red region is explained by the optical transition between Hubbard states, confirming the electronic correlation as the driving force for SMT in VO2. The thermochromism in VO2 has been studied for smart window applications so far in the IR region, which supports the opening of the band gap in semiconducting phase; whereas there is hardly any report in the management of visible light. The filtering of blue light along with reflection of infrared above the semiconductor to metal transition temperature make VO2 applicable as advanced smart windows for overall heat management of a closure.

  3. VO2 microcrystals as an advanced smart window material at semiconductor to metal transition

    International Nuclear Information System (INIS)

    Basu, Raktima; Pandian, Ramanathaswamy; Dhara, Sandip; Magudapathy, P; Sardar, Manas

    2017-01-01

    Textured VO 2 (0 1 1) microcrystals are grown in the monoclinic, M1 phase which undergoes a reversible first order semiconductor to metal transition (SMT) accompanied by a structural phase transition to rutile tetragonal, R phase. Around the phase transition, VO 2 also experiences noticeable change in its optical and electrical properties. A change in color of the VO 2 micro crystals from white to cyan around the transition temperature is observed, which is further understood by absorption of red light using temperature dependent ultraviolet–visible spectroscopic analysis and photoluminescence studies. The absorption of light in the red region is explained by the optical transition between Hubbard states, confirming the electronic correlation as the driving force for SMT in VO 2 . The thermochromism in VO 2 has been studied for smart window applications so far in the IR region, which supports the opening of the band gap in semiconducting phase; whereas there is hardly any report in the management of visible light. The filtering of blue light along with reflection of infrared above the semiconductor to metal transition temperature make VO 2 applicable as advanced smart windows for overall heat management of a closure. (paper)

  4. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    Science.gov (United States)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  5. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  6. Low leakage stoichiometric SrTiO{sub 3} dielectric for advanced metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, Mihaela; Kaczer, Ben; Redolfi, Augusto; Elshocht, Sven van; Jurczak, Malgorzata [imec Belgium, Leuven (Belgium); Afanas' ev, Valeri V. [Department of Physics and Astronomy, KU Leuven (Belgium); Sereni, Gabriele [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); Larcher, Luca [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); MDLab, Saint Christophe (Italy)

    2016-05-15

    Metal-insulator-metal capacitors (MIMCAP) with stoichiometric SrTiO{sub 3} dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr-rich STO seed layer, with the Ti-rich STO top layer. The resulted stoichiometric SrTiO{sub 3} would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr-rich STO which allow further equivalent oxide thickness downscaling. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Development and preliminary experimental study on micro-stacked insulator

    International Nuclear Information System (INIS)

    Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

    2009-01-01

    High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

  8. Open volume defects and magnetic phase transition in Fe{sub 60}Al{sub 40} transition metal aluminide

    Energy Technology Data Exchange (ETDEWEB)

    Liedke, M. O., E-mail: m.liedke@hzdr.de; Anwand, W.; Butterling, M.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Bali, R.; Cornelius, S.; Potzger, K. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Trinh, T. T. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Technical University Dresden, Helmholtzstr. 10, 01609 Dresden (Germany); Salamon, S.; Walecki, D.; Smekhova, A.; Wende, H. [Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Lotharstraße 1, 47048 Duisburg (Germany)

    2015-04-28

    Magnetic phase transition in the Fe{sub 60}Al{sub 40} transition metal aluminide from the ferromagnetic disordered A2-phase to the paramagnetic ordered B2-phase as a function of annealing up to 1000 °C has been investigated by means of magneto-optical and spectroscopy techniques, i.e., Kerr effect, positron annihilation, and Mössbauer spectroscopy. The positron annihilation spectroscopy has been performed in-situ sequentially after each annealing step at the Apparatus for In-situ Defect Analysis that is a unique tool combining positron annihilation spectroscopy with temperature treatment, material evaporation, ion irradiation, and sheet resistance measurement techniques. The overall goal was to investigate the importance of the open volume defects onto the magnetic phase transition. No evidence of variation in the vacancy concentration in matching the magnetic phase transition temperature range (400–600 °C) has been found, whereas higher temperatures showed an increase in the vacancy concentration.

  9. Quantum Monte Carlo study of the superconductor-insulator transition in the dual vortex representation

    Science.gov (United States)

    Khan, Hasan; Gazit, Snir; Randeria, Mohit; Trivedi, Nandini

    The superconductor-insulator transition (SIT) in two dimensions is a paradigm for quantum criticality that has been observed experimentally in Josephson junction arrays, superconducting thin films, and cold atoms trapped in an optical lattice. The conventional picture of the transition is in terms of the condensation of bosonic degrees of freedom (Cooper pairs in superconductors). Interestingly, the transition has a dual description, where the insulating phase is a Bose condensate of vortices. We study the SIT numerically by means of a large-scale quantum Monte Carlo (QMC) simulation in the vortex representation. This provides direct access to both the boson and vortex degrees of freedom and allows us to numerically test the duality and quantify deviations from self-duality. Our main focus is on critical properties such as the vortex and the boson phase stiffness. We compare our results to previous studies in the bosonic representation. We acknowledge support from Grant DOE-BES DE-FG02-07ER46423 (HK, NT).

  10. Elevated temperature erosive wear of metallic materials

    International Nuclear Information System (INIS)

    Roy, Manish

    2006-01-01

    Solid particle erosion of metals and alloys at elevated temperature is governed by the nature of the interaction between erosion and oxidation, which, in turn, is determined by the thickness, pliability, morphology, adhesion characteristics and toughness of the oxide scale. The main objective of this paper is to critically review the present state of understanding of the elevated temperature erosion behaviour of metals and alloys. First of all, the erosion testing at elevated temperature is reviewed. This is followed by discussion of the essential features of elevated temperature erosion with special emphasis on microscopic observation, giving details of the erosion-oxidation (E-O) interaction mechanisms. The E-O interaction has been elaborated in the subsequent section. The E-O interaction includes E-O maps, analysis of transition criteria from one erosion mechanism to another mechanism and quantification of enhanced oxidation kinetics during erosion. Finally, the relevant areas for future studies are indicated. (topical review)

  11. Rational Design of Two-Dimensional Metallic and Semiconducting Spintronic Materials Based on Ordered Double-Transition-Metal MXenes

    KAUST Repository

    Dong, Liang

    2016-12-30

    Two-dimensional (2D) materials that display robust ferromagnetism have been pursued intensively for nanoscale spintronic applications, but suitable candidates have not been identified. Here we present theoretical predictions on the design of ordered double-transition-metal MXene structures to achieve such a goal. On the basis of the analysis of electron filling in transition-metal cations and first-principles simulations, we demonstrate robust ferromagnetism in Ti2MnC2Tx monolayers regardless of the surface terminations (T = O, OH, and F), as well as in Hf2MnC2O2 and Hf2VC2O2 monolayers. The high magnetic moments (3–4 μB/unit cell) and high Curie temperatures (495–1133 K) of these MXenes are superior to those of existing 2D ferromagnetic materials. Furthermore, semimetal-to-semiconductor and ferromagnetic-to-antiferromagnetic phase transitions are predicted to occur in these materials in the presence of small or moderate tensile in-plane strains (0–3%), which can be externally applied mechanically or internally induced by the choice of transition metals.

  12. Deep Learning the Quantum Phase Transitions in Random Electron Systems: Applications to Three Dimensions

    Science.gov (United States)

    Ohtsuki, Tomi; Ohtsuki, Tomoki

    2017-04-01

    Three-dimensional random electron systems undergo quantum phase transitions and show rich phase diagrams. Examples of the phases are the band gap insulator, Anderson insulator, strong and weak topological insulators, Weyl semimetal, and diffusive metal. As in the previous paper on two-dimensional quantum phase transitions [J. Phys. Soc. Jpn. 85, 123706 (2016)], we use an image recognition algorithm based on a multilayered convolutional neural network to identify which phase the eigenfunction belongs to. The Anderson model for localization-delocalization transition, the Wilson-Dirac model for topological insulators, and the layered Chern insulator model for Weyl semimetal are studied. The situation where the standard transfer matrix approach is not applicable is also treated by this method.

  13. Controlled thermoelectric response of a tunable Rashba coupled metal-insulator-superconductor junction

    Science.gov (United States)

    Kapri, Priyadarshini; Adhikary, Priyanka; Sinha, Shubham; Basu, Saurabh

    2018-05-01

    Thermoelectric effect for metal, insulator and the superconductor junctions has been studied with Rashba spin-orbit coupling (RSOC) being present at the interfaces via modified Blonder-Tinkham-Klapwijk (BTK) theory. We find that the thermopower, as a function of an effective barrier potential that characterizes the intermediate insulating layer, displays an oscillatory behavior. Interesting interplay between the strength of RSOC and the effective barrier potential has been carried out in details in this regard. For specific ranges of the effective barrier potential, RSOC enhances the thermopower, while the reverse happens for other values. Moreover it is found that the effective barrier potential plays a crucial role in determining the thermopower spectrum. For a tunable Rashba coupling, the thermopower of the junction can be controlled with precision, which may useful for the thermoelectric applications, at low temperatures. Further the efficiency of the system is obtained for different pairing correlations of the superconducting lead where we find that the system with a d-wave symmetry is more efficient as compared to a s-wave correlation, in some selective regions of effective barrier potential. It is found that for some selective regions of effective barrier potential, the efficiency of the system increases with RSOC and the opposite happens for other values.

  14. Transition metal borides. Synthesis, characterization and superconducting properties

    Energy Technology Data Exchange (ETDEWEB)

    Kayhan, Mehmet

    2013-07-12

    A systematic study was done on the synthesis and superconducting properties of metal rich transition metal borides. Five different binary systems were investigated including the boride systems of niobium, tantalum, molybdenum, tungsten and rhenium. High temperature solid state methods were used in order to synthesize samples of different transition metal borides of the composition M{sub 2}B, MB, M{sub 3}B{sub 2}, MB{sub 2}, and M{sub 2}B{sub 4}. The reactions were carried out in three different furnaces with different sample containers: the electric arc (copper crucible), the high frequency induction furnace (boron nitride, tantalum or glassy carbon crucibles), and the conventional tube furnace (sealed evacuated quartz ampoules). The products obtained were characterized with X-ray powder diffractometry, scanning electron microscopy and energy-dispersive X-ray spectroscopy. Phase analyses and crystal structure refinements using the Rietveld method and based on structure models known from literature were performed. A neutron diffraction measurement was done for W{sub 2}B{sub 4} to allow for a complete crystal structure determination, because of the presence of a heavy element like tungsten and a light element like boron that made it difficult to determine the accurate determination of the boron atom positions and occupancies from X-ray data. A new structure model for W{sub 2}B{sub 4} was proposed. Magnetic measurements in a SQUID magnetometer down to temperatures as low as 1.8 K were performed to several of the products in order to see if the transition metal borides become superconducting at low temperatures, and the results were compared with data from literature. Superconducting properties were found for the following compounds: NbB{sub 2} (T{sub C} = 3.5 K), β-MoB (T{sub C} = 2.4 K), β-WB (T{sub C} = 2.0 K), α-WB (T{sub C} = 4.3 K), W{sub 2}B{sub 4} (T{sub C} = 5.4 K), Re{sub 7}B{sub 3} (T{sub C} = 2.4 K). A relationship between the superconducting properties

  15. Electronic computer prediction of properties of binary refractory transition metal compounds on the base of their simplificated electronic structure

    International Nuclear Information System (INIS)

    Kutolin, S.A.; Kotyukov, V.I.

    1979-01-01

    An attempt is made to obtain calculation equations of macroscopic physico-chemical properties of transition metal refractory compounds (density, melting temperature, Debye characteristic temperature, microhardness, standard formation enthalpy, thermo-emf) using the method of the regression analysis. Apart from the compound composition the argument of the regression equation is the distribution of electron bands of d-transition metals, created by the energy electron distribution in the simplified zone structure of transition metals and approximated by Chebishev polynoms, by the position of Fermi energy on the map of distribution of electron band energy depending upon the value of quasi-impulse, multiple to the first, second and third Brillouin zone for transition metals. The maximum relative error of the regressions obtained as compared with the literary data is 15-20 rel.%

  16. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  17. Strain-induced metal-insulator phase coexistence in perovskite manganites.

    Science.gov (United States)

    Ahn, K H; Lookman, T; Bishop, A R

    2004-03-25

    The coexistence of distinct metallic and insulating electronic phases within the same sample of a perovskite manganite, such as La(1-x-y)Pr(y)Ca(x)MnO3, presents researchers with a tool for tuning the electronic properties in materials. In particular, colossal magnetoresistance in these materials--the dramatic reduction of resistivity in a magnetic field--is closely related to the observed texture owing to nanometre- and micrometre-scale inhomogeneities. Despite accumulated data from various high-resolution probes, a theoretical understanding for the existence of such inhomogeneities has been lacking. Mechanisms invoked so far, usually based on electronic mechanisms and chemical disorder, have been inadequate to describe the multiscale, multiphase coexistence within a unified picture. Moreover, lattice distortions and long-range strains are known to be important in the manganites. Here we show that the texturing can be due to the intrinsic complexity of a system with strong coupling between the electronic and elastic degrees of freedom. This leads to local energetically favourable configurations and provides a natural mechanism for the self-organized inhomogeneities over both nanometre and micrometre scales. The framework provides a physical understanding of various experimental results and a basis for engineering nanoscale patterns of metallic and insulating phases.

  18. Liquid metal flows in insulating elements of self-cooled blankets

    International Nuclear Information System (INIS)

    Molokov, S.

    1995-01-01

    Liquid metal flows in insulating rectangular ducts in strong magnetic fields are considered with reference to poloidal concepts of self-cooled blankets. Although the major part of the flow in poloidal blanket concepts is close to being fully developed, manifolds, expansions, contractions, elbows, etc., which are necessary elements in blanket designs, cause three-dimensional effects. The present investigation demonstrates the flow pattern in basic insulating geometries for actual and more advanced liquid metal blanket concepts and discusses the ways to avoid pressure losses caused by flow redistribution. Flows in several geometries, such as symmetric and non-symmetric 180 turns with and without manifolds, sharp and linear expansions with and without manifolds, etc., have been considered. They demonstrate the attractiveness of poloidal concepts of liquid metal blankets, since they guarantee uniform conditions for heat transfer. If changes in the duct cross-section occur in the plane perpendicular to the magnetic field (ideally a coolant should always flow in the radial-poloidal plane), the disturbances are local and the slug velocity profile is reached roughly at a distance equivalent to one duct width from the manifolds, expansions, etc. The effects of inertia in these flows are unimportant for the determination of the pressure drop and velocity profiles in the core of the flow but may favour heat transfer characteristics via instabilities and strongly anisotropic turbulence. (orig.)

  19. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  20. Synthesis, structural and optical properties of PVP coated transition metal doped ZnS nanoparticles

    Science.gov (United States)

    Desai, N. V.; Shaikh, I. A.; Rawal, K. G.; Shah, D. V.

    2018-05-01

    The room temperature photoluminescence (PL) of transition metal doped ZnS nanoparticles is investigated in the present study. The PVP coated ZnS nanoparticles doped with transition metals are synthesized by facile wet chemical co-precipitation method with the concentration of impurity 1%. The UV-Vis absorbance spectra have a peak at 324nm which shifts slightly to 321nm upon introduction of the impurity. The incorporation of the transition metal as dopant is confirmed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The particle size and the morphology are characterized by scanning electron microscopy (SEM), XRD and UV-Vis spectroscopy. The average size of synthesized nanoparticles is about 2.6nm. The room temperature photoluminescence (PL) of undoped and doped ZnS nanoparticles show a strong and sharp peak at 782nm and 781.6nm respectively. The intensity of the PL changes with the type of doping having maximum for manganese (Mn).

  1. Shock wave compression and metallization of simple molecules

    International Nuclear Information System (INIS)

    Ross, M.; Radousky, H.B.

    1988-03-01

    In this paper we combine shock wave studies and metallization of simple molecules in a single overview. The unifying features are provided by the high shock temperatures which lead to a metallic-like state in the rare gases and to dissociation of diatomic molecules. In the case of the rare gases, electronic excitation into the conduction band leads to a metallic-like inert gas state at lower than metallic densities and provides information regarding the closing of the band gap. Diatomic dissociation caused by thermal excitation also leads to a final metallic-like or monatomic state. Ina ddition, shock wave data can provide information concerning the short range intermolecular force of the insulator that can be useful for calculating the metallic phase transition as for example in the case of hydrogen. 69 refs., 36 figs., 2 tabs

  2. Physical properties of Pd and Al transition metals and Pd-Al binary metal alloy investigated by using molecular dynamics simulation

    International Nuclear Information System (INIS)

    Coruh, A.; Uludogan, M.; Tomak, M.; Cagin, T.

    2002-01-01

    In this study, physical properties, such as Pair Distribution Function g(r), Structure Factor S(k)''1'',''4, Diffusion Coefficient D''2''.''4, Intermediate Scattering function S(k,t)''3'',''4 and Dynamical Structure Factor S(k,w)''3'',''4 of some transition metals and metal alloys are investigated by using molecular dynamics simulation method. The simulation is specified for Pd, Al transition metals and Pd-Al binary metal alloys in the liquid form for different concentrations and at various temperatures by using Quantum Sutton-Chen (Q-SC) inter atomic potential. Intermediate scattering function and dynamical structure factor are calculated for various values of wave vector k. Results are in good agreement with published data''1'',''3'',''4

  3. (Electronic structure and reactivities of transition metal clusters)

    Energy Technology Data Exchange (ETDEWEB)

    1992-01-01

    The following are reported: theoretical calculations (configuration interaction, relativistic effective core potentials, polyatomics, CASSCF); proposed theoretical studies (clusters of Cu, Ag, Au, Ni, Pt, Pd, Rh, Ir, Os, Ru; transition metal cluster ions; transition metal carbide clusters; bimetallic mixed transition metal clusters); reactivity studies on transition metal clusters (reactivity with H{sub 2}, C{sub 2}H{sub 4}, hydrocarbons; NO and CO chemisorption on surfaces). Computer facilities and codes to be used, are described. 192 refs, 13 figs.

  4. Plasmonic reflectors and high-Q nano-cavities based on coupled metal-insulator-metal waveguides

    Directory of Open Access Journals (Sweden)

    Jing Chen

    2012-03-01

    Full Text Available Based on the contra-directional coupling, a composite structure consisting of two coupled metal-insulator-metal (MIM waveguides is proposed to act as an attractive plasmonic reflector. By introducing a defect into one of the MIM waveguides, we show that such a composite structure can be operated as a plasmonic nanocavity with a high quality factor. Both symmetric and anti-symmetric cavity modes are supported in the plasmonic cavity, and their resonance frequencies can be tuned by controlling the defect width. The present structures could have a significant impact for potential applications such as surface plasmon mirrors, filters and solid-state cavity quantum electrodynamics.

  5. Heat Transfer Measurement and Modeling in Rigid High-Temperature Reusable Surface Insulation Tiles

    Science.gov (United States)

    Daryabeigi, Kamran; Knutson, Jeffrey R.; Cunnington, George R.

    2011-01-01

    Heat transfer in rigid reusable surface insulations was investigated. Steady-state thermal conductivity measurements in a vacuum were used to determine the combined contribution of radiation and solid conduction components of heat transfer. Thermal conductivity measurements at higher pressures were then used to estimate the effective insulation characteristic length for gas conduction modeling. The thermal conductivity of the insulation can then be estimated at any temperature and pressure in any gaseous media. The methodology was validated by comparing estimated thermal conductivities with published data on a rigid high-temperature silica reusable surface insulation tile. The methodology was also applied to the alumina enhanced thermal barrier tiles. Thermal contact resistance for thermal conductivity measurements on rigid tiles was also investigated. A technique was developed to effectively eliminate thermal contact resistance on the rigid tile s cold-side surface for the thermal conductivity measurements.

  6. Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

    Science.gov (United States)

    2015-09-23

    layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

  7. High coercivity rare earth-transition metal magnets

    International Nuclear Information System (INIS)

    Croat, J.J.

    1982-01-01

    Ferromagnetic compositions having intrinsic magnetic coercivities at room temperature of at least 1,000 Oersteds are formed by the controlled quenching of molten rare earth-transition metal alloys. Hard magnets may be inexpensively formed from the lower atomic weight lanthanide elements and iron. The preferable compositions lie within: at least one of Fe, Ni, Co; 20 - 70 atomic percent: at least one of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Y; 80 - 30 atomic percent. (author)

  8. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

    Science.gov (United States)

    Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

    2017-12-01

    The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

  9. Electronic correlations in insulators, metals and superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sentef, Michael Andreas

    2010-12-03

    In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

  10. Electronic correlations in insulators, metals and superconductors

    International Nuclear Information System (INIS)

    Sentef, Michael Andreas

    2010-01-01

    In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

  11. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    Energy Technology Data Exchange (ETDEWEB)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Regan, William Raymond [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  12. Thermal transport across metal–insulator interface via electron–phonon interaction

    International Nuclear Information System (INIS)

    Zhang, Lifa; Wang, Jian-Sheng; Li, Baowen; Lü, Jing-Tao

    2013-01-01

    The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green’s function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling. (paper)

  13. Journal of Chemical Sciences | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    The phase shows insulator-metal (I-M) transition at low temperature, the phenomenon often associated with giant magnetoresistance. 3D variable range hopping governs the electrical conduction in the insulator region above the I-M transition temperature. Magnetic susceptibility of the phase has been measured in the ...

  14. On the electron density localization in elemental cubic ceramic and FCC transition metals by means of a localized electrons detector.

    Science.gov (United States)

    Aray, Yosslen; Paredes, Ricardo; Álvarez, Luis Javier; Martiz, Alejandro

    2017-06-14

    The electron density localization in insulator and semiconductor elemental cubic materials with diamond structure, carbon, silicon, germanium, and tin, and good metallic conductors with face centered cubic structure such as α-Co, Ni, Cu, Rh, Pd, Ag, Ir, Pt, and Au, was studied using a localized electrons detector defined in the local moment representation. Our results clearly show an opposite pattern of the electron density localization for the cubic ceramic and transition metal materials. It was found that, for the elemental ceramic materials, the zone of low electron localization is very small and is mainly localized on the atomic basin edges. On the contrary, for the transition metals, there are low-valued localized electrons detector isocontours defining a zone of highly delocalized electrons that extends throughout the material. We have found that the best conductors are those in which the electron density at this low-value zone is the lowest.

  15. Light-induced ultrafast phase transitions in VO2 thin film

    International Nuclear Information System (INIS)

    Lysenko, S.; Rua, A.J.; Vikhnin, V.; Jimenez, J.; Fernandez, F.; Liu, H.

    2006-01-01

    Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 deg. C. As a kind of functional material, VO 2 thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO 2 were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm 2 . The observed PT is associated with the optical interband transition in VO 2 thin film. It suggests that with a pump laser illuminating on the film, excitation from the d θ,ε - state of valence band to the unoccupied excited mixed d θ,ε -π* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d θ,ε -π* - state of the metallic phase band

  16. Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

    Directory of Open Access Journals (Sweden)

    Michael E. Flatté

    2017-05-01

    Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

  17. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  18. Metal-to-nonmetal transitions

    CERN Document Server

    Hensel, Friedrich; Holst, Bastian

    2010-01-01

    This book is devoted to nonmetal-to-metal transitions. The original ideas of Mott for such a transition in solids have been adapted to describe a broad variety of phenomena in condensed matter physics (solids, liquids, and fluids), in plasma and cluster physics, as well as in nuclear physics (nuclear matter and quark-gluon systems). The book gives a comprehensive overview of theoretical methods and experimental results of the current research on the Mott effect for this wide spectrum of topics. The fundamental problem is the transition from localized to delocalized states which describes the nonmetal-to-metal transition in these diverse systems. Based on the ideas of Mott, Hubbard, Anderson as well as Landau and Zeldovich, internationally respected scientists present the scientific challenges and highlight the enormous progress which has been achieved over the last years. The level of description is aimed to specialists in these fields as well as to young scientists who will get an overview for their own work...

  19. Superconductivity in transition metals.

    Science.gov (United States)

    Slocombe, Daniel R; Kuznetsov, Vladimir L; Grochala, Wojciech; Williams, Robert J P; Edwards, Peter P

    2015-03-13

    A qualitative account of the occurrence and magnitude of superconductivity in the transition metals is presented, with a primary emphasis on elements of the first row. Correlations of the important parameters of the Bardeen-Cooper-Schrieffer theory of superconductivity are highlighted with respect to the number of d-shell electrons per atom of the transition elements. The relation between the systematics of superconductivity in the transition metals and the periodic table high-lights the importance of short-range or chemical bonding on the remarkable natural phenomenon of superconductivity in the chemical elements. A relationship between superconductivity and lattice instability appears naturally as a balance and competition between localized covalent bonding and so-called broken covalency, which favours d-electron delocalization and superconductivity. In this manner, the systematics of superconductivity and various other physical properties of the transition elements are related and unified. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  20. Proceedings, strongly correlated electronic materials: The Los Alamos symposium 1993

    International Nuclear Information System (INIS)

    Bedell, K.S.

    1994-01-01

    The subject included such topics as high temperature superconductors, heavy-fermion insulators and superconductors, the metal-insulator transition, the superconductor-insulator transition and unusual (non-Fermi liquid) normal metallic states. The symposium was structured around 13 invited review talks; with each talk, there were several (about 30) related short presentations and discussion sections (90 pages). The review talks and short papers were processed separately for the data base