WorldWideScience

Sample records for metal oxide-semiconductor solar cells

  1. Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Ahmed A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Dere, A. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Arif, Bilal [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-11-25

    The Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method to fabricate photodiodes. The transparent metal oxide Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O thin films were grown on p-Si substrates by spin coating technique. Electrical characterization of the p-Si/AZO:Cu{sub 2}O photodiodes was performed by current–voltage and capacitance–conductance–voltage characteristics under dark and various illumination conditions. The transient photocurrent of the diodes increases with increase in illumination intensity. The photoconducting mechanism of the diodes is controlled by the continuous distribution of trap levels. The photocapacitance and photoconductivity of the diodes are decreased with increasing Cu{sub 2}O content. The series resistance–voltage behavior confirms the presence of the interface states in the interface of the diodes. The photoresponse properties of the diodes indicate that the p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used as a photosensor in solar panel tracking applications. - Highlights: • Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes were fabricated. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used in the optoelectronic applications.

  2. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    Science.gov (United States)

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  3. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    Science.gov (United States)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-12-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  4. Single-photon imaging in complementary metal oxide semiconductor processes

    NARCIS (Netherlands)

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image

  5. Large Lateral Photovoltaic Effect in Metal-(Oxide-Semiconductor Structures

    Directory of Open Access Journals (Sweden)

    Chongqi Yu

    2010-11-01

    Full Text Available The lateral photovoltaic effect (LPE can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

  6. Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures.

    Science.gov (United States)

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

  7. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  8. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  9. Effects of p-type nickel oxide semiconductor and gold bilayer on highly efficient polymer solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jeong Woo [R and D Center, Samsung Corning Precision Materials Co., Ltd., Asan (Korea, Republic of); Shin, Sang Chul; Shin, Jae Won [Dept. of Electronics and Electrical Engineering, Dongguk University-SeouL, Seoul (Korea, Republic of)

    2016-10-15

    In this study, we report a new hole-collecting interlayer (HCI) comprising NiO/Au/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM)-based polymer solar cells (PSCs). The insertion of a bilayer of NiO/Au between indium tin oxide (ITO) and PEDOT:PSS improves the photocurrent generation of the PSCs. The NiO layer provides an intermediate step energy level between ITO and PEDOT:PSS, leading to enhanced hole collection. The ultrathin Au induces a surface plasmon resonance effect, allowing more photons to be absorbed by the photoactive layer and improving the hole-collecting properties by planarizing and doping the NiO. The PSCs with the NiO/Au/PEDOT:PSS HCIs yield a power-conversion efficiency of 3.9 ± 0.2%, which is approximately 15% higher than that of PSCs with a PEDOT:PSS-only HCI, under a simulated air mass 1.5 global (G) 100 mW/cm{sup 2} illumination.

  10. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  11. Charge transient spectroscopy measurements of metal-oxide-semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Arnold, Markus; Fechner, Axel; Zahn, Dietrich R.T. [Chemnitz University of Technology, Semiconductor Physics, 09107 Chemnitz (Germany)

    2010-02-15

    Charge transient spectroscopy (QTS) is an electrical measurement technique related to deep-level transient spectroscopy (DLTS). Using QTS it is possible to measure fast charge reloading processes even in the absence of depletion regions as a function of time and temperature with different pulse voltages and pulse widths. As a result, one can determine the number, the energetic position, the capture cross section, and the density of the electrically active traps. Here QTS measurements of Al/SiO2/Si metal-oxide-semiconductor structures are presented revealing the influence of manganese implantation into p- and n-doped silicon on the charge carrier transport and trapping properties. The QTS results are compared to I-V, C-V and DLTS measurements on the same samples and the differences are discussed (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Neutron radiation effects on metal oxide semiconductor (MOS) devices

    Energy Technology Data Exchange (ETDEWEB)

    Abdul Amir, Haider F. [School of Science and Technology, University Malaysia Sabah, 88999 Kota Kinabalu, Sabah (Malaysia)], E-mail: haider@ums.edu.my; Chik, Abdulah [School of Science and Technology, University Malaysia Sabah, 88999 Kota Kinabalu, Sabah (Malaysia)

    2009-09-15

    The main purpose of this study is to provide the knowledge and data on Deuterium-Tritium (D-T) fusion neutron induced damage in MOS devices. Silicon metal oxide semiconductor (MOS) devices are currently the cornerstone of the modern microelectronics industry. However, when a MOS device is exposed to a flux of energetic radiation or particles, the resulting effects from this radiation can cause several degradation of the device performance and of its operating life. The part of MOS structure (metal oxide semiconductor) most sensitive to neutron radiation is the oxide insulating layer (SiO{sub 2}). When ionizing radiation passes through the oxide, the energy deposited creates electron-hole pairs. These electron-hole pairs have been seriously hazardous to the performance of these electronic components. The degradation of the current gain of the dual n-channel depletion mode MOS caused by neutron displacement defects, was measured using in situ method during neutron irradiation. The average degradation of the gain of the current is about 35 mA, and the change in channel current gain increased proportionally with neutron fluence. The total fusion neutron displacement damage was found to be 4.8 x 10{sup -21} dpa per n/cm{sup 2}, while the average fraction of damage in the crystal of silicon was found to be 1.24 x 10{sup -12}. All the MOS devices tested were found to be controllable after neutron irradiation and no permanent damage was caused by neutron fluence irradiation below 10{sup 10}n/cm{sup 2}. The calculation results shows that (n,{alpha}) reaction induced soft-error cross-section about 8.7 x 10{sup -14} cm{sup 2}, and for recoil atoms about 2.9 x 10{sup -15} cm{sup 2}, respectively.

  13. Neutron radiation effects on metal oxide semiconductor (MOS) devices

    International Nuclear Information System (INIS)

    Abdul Amir, Haider F.; Chik, Abdulah

    2009-01-01

    The main purpose of this study is to provide the knowledge and data on Deuterium-Tritium (D-T) fusion neutron induced damage in MOS devices. Silicon metal oxide semiconductor (MOS) devices are currently the cornerstone of the modern microelectronics industry. However, when a MOS device is exposed to a flux of energetic radiation or particles, the resulting effects from this radiation can cause several degradation of the device performance and of its operating life. The part of MOS structure (metal oxide semiconductor) most sensitive to neutron radiation is the oxide insulating layer (SiO 2 ). When ionizing radiation passes through the oxide, the energy deposited creates electron-hole pairs. These electron-hole pairs have been seriously hazardous to the performance of these electronic components. The degradation of the current gain of the dual n-channel depletion mode MOS caused by neutron displacement defects, was measured using in situ method during neutron irradiation. The average degradation of the gain of the current is about 35 mA, and the change in channel current gain increased proportionally with neutron fluence. The total fusion neutron displacement damage was found to be 4.8 x 10 -21 dpa per n/cm 2 , while the average fraction of damage in the crystal of silicon was found to be 1.24 x 10 -12 . All the MOS devices tested were found to be controllable after neutron irradiation and no permanent damage was caused by neutron fluence irradiation below 10 10 n/cm 2 . The calculation results shows that (n,α) reaction induced soft-error cross-section about 8.7 x 10 -14 cm 2 , and for recoil atoms about 2.9 x 10 -15 cm 2 , respectively.

  14. Plasmonic nanostructured metal-oxide-semiconductor reflection modulators.

    Science.gov (United States)

    Olivieri, Anthony; Chen, Chengkun; Hassan, Sa'ad; Lisicka-Skrzek, Ewa; Tait, R Niall; Berini, Pierre

    2015-04-08

    We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers.

  15. Single-photon imaging in complementary metal oxide semiconductor processes

    Science.gov (United States)

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  16. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

    2002-01-01

    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  17. Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution

    NARCIS (Netherlands)

    van der Wel, A.P.; Klumperink, Eric A.M.; Hoekstra, E.; Nauta, Bram

    2005-01-01

    In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect transistors when the device is periodically and rapidly cycled between an "on" and an "off" bias state. We derive the effective RTS time constants for this case using Shockley–Read–Hall statistics

  18. Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

    Science.gov (United States)

    Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

    2018-01-01

    Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

  19. Metal Matrix Composite Solar Cell Metallization

    Directory of Open Access Journals (Sweden)

    Wilt David M.

    2017-01-01

    Full Text Available Advanced solar cells are moving to ever thinner formats in order to save mass and in some cases improve performance. As cells are thinned, the possibility that they may fracture or cleave due to mechanical stresses is increased. Fractures of the cell can degrade the overall device performance if the fracture propagates through the contact metallization, which frequently occurs. To address this problem, a novel semiconductor metallization system based on multi-walled carbon nanotube (CNT reinforcement, termed metal matrix composite (MMC metallization is under investigation. Electro-mechanical characterization of MMC films demonstrate their ability to provide electrical conductivity over >40 micron wide cracks in the underlying semiconductor, with the carbon nanotubes bridging the gap. In addition, these materials show a “self-healing” behaviour, electrically reconnecting at ~30 microns when strained past failure. Triple junction (TJ space cells with MMC metallization demonstrated no loss in Jsc after intentional fracture, whereas TJ cells with conventional metallization suffer up to 50% Jsc loss.

  20. Energy level alignment in metal/oxide/semiconductor and organic dye/oxide systems

    Science.gov (United States)

    Bersch, Eric

    The alignment between the energy levels of the constituent materials of metal-oxide-semiconductor field effect transistors (MOSFET's) and dye sensitized solar cell (DSSC's) is a key property that is critical to the functions of these devices. We have measured the energy level alignment (band offsets) for metal/oxide/semiconductor (MOS) systems with high-kappa gate oxides and metal gates, and for organic dye/oxide systems. The combination of UV photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPS) in the same vacuum system was used to measure both the occupied and unoccupied density of states (DOS), respectively, of these materials systems. Additional soft X-ray photoemission spectroscopy (SXPS) measurements were made of both the valence bands and core levels of the high-kappa systems. The combination of the UPS, IPS and SXPS measurements were used to determine the band offsets between the high-kappa oxides and the Si substrates of thin film oxide/Si samples. To find the metal-oxide band offsets, thin metal layers were sequentially deposited on the oxide surfaces, followed by spectroscopic measurements. These measurements, combined with the measurements from the clean oxide surfaces, were used to find the metal-oxide band offsets. Metal-oxide band offset values were also calculated by the Interface Gap State (IGS) model. We compared the experimental metal-oxide conduction band offset (CBO) values with those calculated using the IGS model, and found that they tended to agree well for Ru/oxide and Ti/oxide systems, but not as well for Al/oxide systems. Through core level spectroscopy, we correlated observations of the composition of the metallic layers with the trends in agreement between the experimental and IGS CBO values, which led to the conclusion that the IGS model gives accurate values for the CBO for systems with chemically abrupt interfaces. Core level spectroscopy of the MOS systems also showed that Al and Ti overlayers reduced the

  1. Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies

    Science.gov (United States)

    Balakumar, S.; Rakkesh, R. Ajay

    2013-02-01

    Core/Shell Nanostructures of Metal Oxide Semiconductors (MOS) have attracted much attention because of their most fascinating tunable applications. These core shell morphologies can be easily engineered to enhance the unique properties of the metal-oxide nanostructures, which make them suitable as photocatalyst due to their high catalytic activity, substantial stability, and brilliant perspective in applications. This paper provides an overview on our work on the synthesis of some interesting core/ shell nanostructures of MOS such as ZnO-TiO2, ZnO-MoO3, and V2O5-TiO2 using a low temperature wet chemical route and hydrothermal techniques and their photocatalytic properties from the aspects of different shell materials and shell thicknesses. The effect of process parameters such as pH, temperature, and ratio of core and shell materials, was systematically studied. Here the evidence for the core shell formation with different shell thicknesses came from the X-ray diffraction peak intensities. The shell thickness variation was also confirmed by Transmission Electron Microscopic studies. Effect of shell thickness on optical band gap of the core shell fabricated was also investigated using DRS UV-Visible spectroscopy. A comprehensive study was carried out for the photocatalytic efficiency of core shell nanostructures by evaluating the photo-degradation of Acridine Orange (AO) dye in aqueous solution under visible and solar light irradiations. These results offered simple approaches to the nanoscale engineering and synthesis of MOS hybrid systems to serve as better photocatalytic materials.

  2. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  3. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Science.gov (United States)

    Long, Rathnait D.; McIntyre, Paul C.

    2012-01-01

    The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  4. Dye Sensitized Solar Cell, DSSC

    Directory of Open Access Journals (Sweden)

    Pongsatorn Amornpitoksuk

    2003-07-01

    Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

  5. Note: Multi-confocal fluorescence correlation spectroscopy in living cells using a complementary metal oxide semiconductor-single photon avalanche diode array

    Science.gov (United States)

    Kloster-Landsberg, M.; Tyndall, D.; Wang, I.; Walker, R.; Richardson, J.; Henderson, R.; Delon, A.

    2013-07-01

    Living cells are heterogeneous and rapidly changing biological samples. It is thus desirable to measure molecular concentration and dynamics in many locations at the same time. In this note, we present a multi-confocal setup capable of performing simultaneous fluorescence correlation spectroscopy measurements, by focusing the spots with a spatial light modulator and acquiring data with a monolithic 32 × 32 single-photon avalanche photodiode array. A post-processing method is proposed to correct cross-talk effects between neighboring spots. We demonstrate the applicability of our system by simultaneously measuring the diffusion of free enhanced Green Fluorescent Protein (eGFP) molecules at nine different points in living cells.

  6. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.

    2000-01-01

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n ++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. (c) 2000 American Institute of Physics

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  8. Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions

    Science.gov (United States)

    Passlack, M.; Hong, M.; Schubert, E. F.; Zydzik, G. J.; Mannaerts, J. P.; Hobson, W. S.; Harris, T. D.

    1997-06-01

    This article investigates steady-state nonequilibrium conditions in metal-oxide-semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal-insulator-semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance-voltage and conductance-voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication.

  9. A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P-N-P Bipolar Junction Transistor

    Science.gov (United States)

    Lai, Cheng‑Hsiao; Lai, Liang‑Wei; Chiang, Wen‑Jen; King, Ya‑Chin

    2006-04-01

    Logarithmic-response complementary metal oxide semiconductor (CMOS) active pixel sensors provide a desirable attribute of wide dynamic range even with low supply voltages. In this paper, a log-mode pixel with employing parasitic P-N-P bipolar junction transistor (BJT) to amplify photo-current is investigated and optimized. A new log-mode cell with a calibration transistor is proposed to increase the output voltage swing as well as to reduce the fixed pattern noise. The measurement results demonstrate that, the output voltage swing of this new cell is enhanced by 4× and fixed pattern noise (FPN) of a pixel array can be reduced by 10× comparing to that of a conventional log-mode CMOS active pixel sensor.

  10. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Science.gov (United States)

    Ciccarelli, C.; Park, B. G.; Ogawa, S.; Ferguson, A. J.; Wunderlich, J.

    2010-08-01

    We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device. We have identified two different regimes where we observe a large and gate-voltage dependent MR. We suggest two different mechanisms which can explain the observed high MR. Moreover, we have studied how the MR of the MOSFET scales with the dimensions of the channel for gate voltages below the threshold. We observed a decrease in the MR by two orders of magnitude by reducing the dimensions of the channel from 50×280 μm2 to 5×5 μm2.

  11. Energy Harvesting Thermoelectric Generators Manufactured Using the Complementary Metal Oxide Semiconductor Process

    Directory of Open Access Journals (Sweden)

    Wen-Jung Tsai

    2013-02-01

    Full Text Available This paper presents the fabrication and characterization of energy harvesting thermoelectric micro generators using the commercial complementary metal oxide semiconductor (CMOS process. The micro generator consists of 33 thermocouples in series. Thermocouple materials are p-type and n-type polysilicon since they have a large Seebeck coefficient difference. The output power of the micro generator depends on the temperature difference in the hot and cold parts of the thermocouples. In order to increase this temperature difference, the hot part of the thermocouples is suspended to reduce heat-sinking. The micro generator needs a post-CMOS process to release the suspended structures of hot part, which the post-process includes an anisotropic dry etching to etch the sacrificial oxide layer and an isotropic dry etching to remove the silicon substrate. Experiments show that the output power of the micro generator is 9.4 mW at a temperature difference of 15 K.

  12. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

    Science.gov (United States)

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

    1981-01-01

    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  13. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    DEFF Research Database (Denmark)

    Forsén, Esko Sebastian; Abadal, G.; Ghatnekar-Nilsson, S.

    2005-01-01

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions...... and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic...... excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics....

  14. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

    Science.gov (United States)

    Liao, Meiyong; Liu, Jiangwei; Sang, Liwen; Coathup, David; Li, Jiangling; Imura, Masataka; Koide, Yasuo; Ye, Haitao

    2015-02-01

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  15. Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.

    Science.gov (United States)

    van der Donk, A G; Bergveld, P

    1992-04-01

    A theoretical noise analysis of the combination of a capacitive microphone and a preamplifier containing a metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-value resistive bias element is given. It is found that the output signal-to-noise ratio for a source follower and for a common-source circuit is almost the same. It is also shown that the output noise can be reduced by making the microphone capacitance as well as the bias resistor as large as possible, and furthermore by keeping the parasitic gate capacitances as low as possible and finally by using an optimum value for the gate area of the MOSFET. The main noise source is the thermal noise of the gate leakage resistance of the MOSFET. It is also shown that short-channel MOSFETs produce more thermal channel noise than longer channel devices.

  16. Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structures

    Science.gov (United States)

    Singh, N.; Rys, A.

    1993-02-01

    The fabrication of metal-oxide-semiconductor (MOS) capacitors on n-type, Si-face 6H-SiC is described for both wet and dry oxidation processes, and the effect of thermal oxidation conditions on the electrical properties of MOS capacitors are investigated. The values of the oxide thickness were obtained as a function of the oxidation time at various oxidation temperatures (which were kept between 1150 and 1250 C). It was found that samples prepared by both dry and wet oxidation showed accumulation, depletion, and inversion regions under illumination, while inversion did not occur under dark conditions. The C-V characteristics of oxidized samples were improved after the oxidized samples were annealed in argon for 30 min. The relation between the oxide thickness and the oxidation time could be expressed by parabolic law, which is also used for thermal oxidation of Si.

  17. Dimensional optimization of nanowire--complementary metal oxide--semiconductor inverter.

    Science.gov (United States)

    Hashim, Yasir; Sidek, Othman

    2013-01-01

    This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.

  18. Magnetotransport investigations of the two-dimensional metallic state in silicon metal-oxid-semiconductor structures

    International Nuclear Information System (INIS)

    Prinz, A.

    2002-03-01

    For more than two decades it was the predominant view among the physical community that the every two-dimensional (2D) disordered electron system becomes insulating as the temperature approaches the absolute zero temperature (0 Kelvin or -273.15 o C). Two-dimensional means that the movement of the charge carriers is confined in one direction by a potential so that the carriers can move freely only perpendicular to the confinement. The most famous physical realization of a 2D system is the silicon metal-oxide-semiconductor field effect transistor (Si-MOSFET). It is one of the basic elements of most electronic devices in our daily life. The working principle is very simple. Charges are attracted to the semiconductor-oxide interface by an electric field applied between the metallic gate and the semiconductor, so that a 2D conductive channel is formed. The charge density can be adjusted by the voltage from zero up to 10 13 cm -2 . In 1994 Kravchenko and coworkers made a very important discovery. They studied high mobility Si-MOSFETs and found that for densities below a certain critical value, nc, the resistivity increases as the temperature is decreased below 2 K, whereas for densities above $n c $ the resistivity decreases unexpectedly. The transition from insulating to metallic behavior, known as metal-insulator transition (MIT), was obviously a contradiction to the commonly accepted theories which predict insulating behavior for any density. The insulating behavior is a consequence of the wave properties of electrons which leads to interference in disordered media and thus to enhanced backscattering. In the subsequent years, experimental studies were performed on a variety of 2D systems, which qualitatively showed a similar behavior. All the investigated samples had one thing in common. The interaction energy between the carriers was considerable higher than their mean kinetic energy due to their movement in the 2D plane. Since the electron-electron interaction was

  19. Metal Oxide/Semiconductor Heterojunctions as Carrier-Selective Contacts for Photovoltaic Applications

    Science.gov (United States)

    Man, Gabriel Jen Shi

    Solar radiation is a vast, distributed, and renewable energy source which Humanity can utilize via the photovoltaic effect. The goal of photovoltaic technology is to minimize the true costs, while maximizing the power conversion efficiency and lifetime of the cell/module. Interface-related approaches to achieving this goal are explored here, for two technologically-important classes of light absorbers: crystalline-silicon (c-Si) and metal halide perovskite (MHP). The simplest solar cell consists of a light absorber, sandwiched between two metals with dissimilar work functions. Carrier-selective contacts (CSC's), which are ubiquitous in modern solar cells, are added to improve the electrical performance. Solar cells require asymmetric carrier transport within the cell, which can be effected via electrostatic and/or effective fields, and CSC's augment the asymmetry by selectively transporting holes to one contact, and electrons to the other contact. The proper design and implementation of a CSC is crucial, as the performance, lifetime, and/or cost reduction of a solar cell can be hampered by a single interface or layer. A framework, consisting of eight core requirements, was developed from first-principles to evaluate the effectiveness of a given CSC. The framework includes some requirements which are well-recognized, such as the need for appropriate band offsets, and some requirements which are not well-recognized at the moment, such as the need for effective valence/conduction band density of states matching between the absorber and CSC. The application of the framework to multiple silicon-based and MHP-based CSC's revealed the difficulties of effectively designing and implementing a CSC. A poly(3-hexylthiophene)/c-Si heterojunction was found to be a near ideal hole-selective contact (HSC). Three metal oxide/c-Si heterojunctions initially expected to yield comparable electron-selective contacts (ESC's), titanium dioxide/c-Si (TiO2/c-Si), zinc oxide/c-Si (Zn

  20. Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

    Science.gov (United States)

    Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

    2018-01-01

    This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

  1. Accurate geometry scalable complementary metal oxide semiconductor modelling of low-power 90 nm amplifier circuits

    Directory of Open Access Journals (Sweden)

    Apratim Roy

    2014-05-01

    Full Text Available This paper proposes a technique to accurately estimate radio frequency behaviour of low-power 90 nm amplifier circuits with geometry scalable discrete complementary metal oxide semiconductor (CMOS modelling. Rather than characterising individual elements, the scheme is able to predict gain, noise and reflection loss of low-noise amplifier (LNA architectures made with bias, active and passive components. It reduces number of model parameters by formulating dependent functions in symmetric distributed modelling and shows that simple fitting factors can account for extraneous (interconnect effects in LNA structure. Equivalent-circuit model equations based on physical structure and describing layout parasites are developed for major amplifier elements like metal–insulator–metal (MIM capacitor, spiral symmetric inductor, polysilicon (PS resistor and bulk RF transistor. The models are geometry scalable with respect to feature dimensions, i.e. MIM/PS width and length, outer-dimension/turns of planar inductor and channel-width/fingers of active device. Results obtained with the CMOS models are compared against measured literature data for two 1.2 V amplifier circuits where prediction accuracy for RF parameters (S(21, noise figure, S(11, S(22 lies within the range of 92–99%.

  2. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  3. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  4. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    Science.gov (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  5. The role of metallic impurities in oxide semiconductors: first-principles calculations and PAC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Errico, L.A.; Fabricius, G.; Renteria, M. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2004-08-01

    We report an ab-initio comparative study of the electric-field-gradient tensor (EFG) and structural relaxations introduced by acceptor (Cd) and donor (Ta) impurities when they replace cations in a series of binary oxides: TiO{sub 2}, SnO{sub 2}, and In{sub 2}O{sub 3}. Calculations were performed with the Full-Potential Linearized-Augmented Plane Waves method that allows us to treat the electronic structure and the atomic relaxations in a fully self-consistent way. We considered different charge states for each impurity and studied the dependence on these charge states of the electronic properties and the structural relaxations. Our results are compared with available data coming from PAC experiments and previous calculations, allowing us to obtain a new insight on the role that metal impurities play in oxide semiconductors. It is clear from our results that simple models can not describe the measured EFGs at impurities in oxides even approximately. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

    Science.gov (United States)

    Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

    2017-05-02

    Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

  7. Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO 2 ) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO 2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO 2 interface at an energy level E t = 1.59 eV below the HfO 2 conduction band edge with density N t = 1.36 × 10 19 cm −3 . A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO 2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  8. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    International Nuclear Information System (INIS)

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P.

    2008-01-01

    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 μm complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate ω 0.5 filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging

  9. Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

    Science.gov (United States)

    Mikawa, R. E.; Lenahan, P. M.

    1985-03-01

    With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

  10. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    OpenAIRE

    C. Spathis; A. Birbas; K. Georgakopoulou

    2015-01-01

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions ...

  11. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    Science.gov (United States)

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-06-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range.

  12. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Burgués, Javier; Marco, Santiago

    2018-01-25

    Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher

  13. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration.

    Science.gov (United States)

    Zhang, Jian; Qin, Ziyu; Zeng, Dawen; Xie, Changsheng

    2017-03-01

    Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

  14. Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure

    Science.gov (United States)

    Sameshima, Toshiyuki; Furukawa, Jun; Nakamura, Tomohiko; Shigeno, Satoshi; Node, Tomohito; Yoshidomi, Shinya; Hasumi, Masahiko

    2014-03-01

    We report the properties of features of photo induced minority carrier annihilation at the silicon surface in a metal-oxide-semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ω cm n-type 500-µm-thick crystalline silicon substrates coated with 100-nm-thick thermally grown SiO2 layers were prepared. Part of the SiO2 at the rear surface was removed. Al electrode bars were formed at the top and rear surfaces to form the structures Al/SiO2/Si/SiO2/Al and Al/SiO2/Si/Al. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode bar of the structure Al/SiO2/Si/SiO2/Al. Microwave transmittance was measured on the other side of the silicon region of the Al electrode bars. The measurement and analysis of microwave absorption by photo induced carriers laterally diffusing across the silicon region coated with Al electrodes revealed a change in the carrier recombination velocity at the silicon surface with the bias voltage applied onto the top Al electrode. The applied bias voltages of +2.0 and -2.2 V gave peaks at surface recombination velocities of 83 and 86 cm/s, respectively, for the sample structure Al/SiO2/Si/SiO2/Al, while it was 44 cm/s under the bias-free condition. A peak surface recombination velocity of 81 cm/s was only observed at a bias voltage of -2.0 V for the sample structure Al/SiO2/Si/Al.

  15. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-01-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  16. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    Science.gov (United States)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  17. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  18. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  19. Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Li, Liuan; Wang, Qingpeng; Nakamura, Ryosuke; Jiang, Ying; Ao, Jin-Ping; Xu, Yonggang

    2015-01-01

    In this paper, the influence of deposition conditions and post annealing upon the device performance of sputtering-deposited TiN/AlO/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors is reported. The metal-oxide-semiconductor structure on GaN with AlO deposited in a medium O 2 /Ar ratio possessed the smallest interfacial state density and reverse leakage current. Metal-oxide-semiconductor heterostructure field-effect transistors with a small hysteresis and a low leakage current were obtained by depositing AlO with a medium O 2 /Ar ratio and post-annealing at 600 °C for 1 min. After annealing, the maximum transconductance shows some decrease, resulting in a decrease of saturation drain current. (paper)

  20. Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

    Science.gov (United States)

    Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

    2013-03-07

    In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

  1. Charge-flow structures as polymeric early-warning fire alarm devices. M.S. Thesis; [metal oxide semiconductors

    Science.gov (United States)

    Sechen, C. M.; Senturia, S. D.

    1977-01-01

    The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

  2. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Science.gov (United States)

    Yokoyama, Masafumi; Asakura, Yuji; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi

    2014-06-01

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al2O3/GaSb MOS interface properties. The Al2O3/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (Dit) of ˜4.5 × 1013 cm-2 eV-1. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al2O3/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  3. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  4. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

    2015-09-23

    In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO₂ and NH₃, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  5. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  6. Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Meiyong, E-mail: meiyong.liao@nims.go.jp [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Optical and Electronic Materials Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Liu, Jiangwei; Imura, Masataka; Koide, Yasuo [Optical and Electronic Materials Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Sang, Liwen [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Coathup, David; Li, Jiangling; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom)

    2015-02-23

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  7. Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Shin, Mincheol

    2010-08-01

    Device performance of p-type nanowire Schotty barrier metal-oxide-semiconductor field-effect transistors is investigated focusing on the channel orientation effects. A rigorous quantum-mechanical calculation of hole current based on the multiband k ṡp method is carried out. The [111] oriented devices show the most superior performance, in terms of subthreshold slope, threshold voltage variation, and on-current. In particular, on-current in the [111] oriented devices is about twice as large as that in the [100] oriented devices. Tunneling effective mass, quantization energy, and Schottky barrier thickness are examined as the major factors that influence on the orientation-dependent current injection into the channel.

  8. A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

    DEFF Research Database (Denmark)

    Gammelgaard, Lauge; Bøggild, Peter; Wells, J.W.

    2008-01-01

    and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe......We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm...

  9. On the decay of the trapped holes and the slow states in metal-oxide-semiconductor capacitors

    Science.gov (United States)

    Meinertzhagen, A.; Petit, C.; Yard, G.; Jourdain, M.; Salace, G.

    1996-03-01

    We have compared the charge created in p-metal-oxide-semiconductor capacitors by Fowler-Nordheim injection from the gate and from the substrate. We have shown that an injection from the gate creates a negative charge, trapped holes, and positively charged slow states whereas an injection from the substrate creates a negative charge, slow states, and amphoteric neutral traps; once charged these neutral traps are discharged irreversibly, as are the trapped holes, by an appropriate gate bias. We have observed that the discharge of the trapped holes, and the charge or discharge of the slow states, obey the same general law, but the time response of the trapped holes is always shorter than the time response of the slow states. This general law is equivalent to the so-called ``universal law,'' which is the law which describes the time dependence of current observed in any dielectric in response to a step-function field.

  10. Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

    2014-06-01

    We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (Tbody) scaling provides better short channel effect (SCE) control, whereas the Tbody scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δTbody) scattering (μfluctuation). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (Tchannel) scaling is more favorable than the thickness of MOS interface buffer layer (Tbuffer) scaling from a viewpoint of a balance between SCEs control and μfluctuation reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.

  11. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    Directory of Open Access Journals (Sweden)

    C. Spathis

    2015-08-01

    Full Text Available Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

  12. Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Spathis, C.; Birbas, A.; Georgakopoulou, K.

    2015-08-01

    Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

  13. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  14. CPV solar cell modeling and metallization optimization

    NARCIS (Netherlands)

    Gupta, D.K.; Barink, M.; Langelaar, M.

    2018-01-01

    Concentrated photovoltaics (CPV) has recently gained popularity due to its ability to deliver significantly more power at relatively lower absorber material costs. In CPVs, lenses and mirrors are used to concentrate illumination over a small solar cell, thereby increasing the incident light by

  15. CPV solar cell modeling and metallization optimization

    NARCIS (Netherlands)

    Gupta, D.K.; Barink, Marco; Langelaar, M.

    2018-01-01

    Concentrated photovoltaics (CPV) has recently gained popularity due to its ability to deliver significantly more power at relatively lower absorber material costs. In CPVs, lenses and mirrors are used to concentrate illumination over a small solar cell, thereby increasing the incident light by

  16. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  17. Molybdenum-tin as a solar cell metallization system

    Science.gov (United States)

    Boyd, D. W.; Radics, C.

    1981-01-01

    The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

  18. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  19. A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

    Science.gov (United States)

    Mizobuchi, Koichi; Adachi, Satoru; Tejada, Jose; Oshikubo, Hiromichi; Akahane, Nana; Sugawa, Shigetoshi

    2008-07-01

    A very low dark current (VLDC) temperature-resistant approach which best suits a wide dynamic range (WDR) complementary metal oxide semiconductor (CMOS) image sensor with a lateral over-flow integration capacitor (LOFIC) has been developed. By implementing a low electric field photodiode without a trade-off of full well-capacity, reduced plasma damage, re-crystallization, and termination of silicon-silicon dioxide interface states in the front end of line and back end of line (FEOL and BEOL) in a 0.18 µm, two polycrystalline silicon, three metal (2P3M) process, the dark current is reduced to 11 e-/s/pixel (0.35 e-/s/µm2: pixel area normalized) at 60 °C, which is the lowest value ever reported. For further robustness at low and high temperatures, 1/3-in., 5.6-µm pitch, 800×600 pixel sensor chips with low noise readout circuits designed for a signal and noise hold circuit and a programmable gain amplifier (PGA) have also been deposited with an inorganic cap layer on a micro-lens and covered with a metal hermetically sealed package assembly. Image sensing performance results in 2.4 e-rms temporal noise and 100 dB dynamic range (DR) with 237 ke- full well-capacity. The operating temperature range is extended from -40 to 85 °C while retaining good image quality.

  20. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    Science.gov (United States)

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-08

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  1. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  2. Excited state interactions in graphene oxide-semiconductor/metal nanoparticle architectures for sensing and energy conversion

    Science.gov (United States)

    Lightcap, Ian V.

    The recent emergence of graphene, along with its unique and impressive set of properties, has resulted in a concerted effort to incorporate the material into electronic devices and composite materials. Graphene oxide, a chemically modified form of graphene which can be produced economically and in large scale, is one of the most common starting materials for making graphene composite materials with improved conductivity, photovoltaic performance, and photocatalytic activity, to name a few examples. This dissertation describes progress made in understanding and quantifying the electronic properties of graphene oxide as they relate to electron storage and shuttling in composite materials. A more complete understanding of the nature of electronic interactions in graphene composites was achieved through two processes: 1) A dual electron-titration showing storage and shuttling of electrons in reduced graphene oxide. 2) A method developed to isolate the energy and electron transfer pathways involved in the deactivation of excited CdSe quantum dots by RGO. The results obtained from these two processes provide insight into the electronic interactions between graphene, semiconductors, and metals. Additionally, composite films were constructed to demonstrate the electron transfer properties of reduced graphene oxide. TiO2-reduced graphene oxide films were made via a simple drop-cast technique. The films show enhanced photovoltaic and photocatalytic characteristics when compared to TiO2-only films. A stacked architecture incorporating single-layer reduced graphene oxide on thin TiO2 nanoparticle films was developed as a method for illumination-controlled deposition of metal nanoparticles. Films of metal nanoparticles made using this technique were employed as Surface Enhanced Resonance Raman (SERRS) sensors and show nano-molar sensitivity. Finally, quantum dot-reduced graphene oxide composites were made via an electrophoretic deposition process. The resulting films were used

  3. Iron-copper metallization for flexible solar/cell arrays

    Science.gov (United States)

    Lavendel, H. W.

    1983-01-01

    The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.

  4. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

    Science.gov (United States)

    Kilpi, Olli-Pekka; Svensson, Johannes; Wu, Jun; Persson, Axel R; Wallenberg, Reine; Lind, Erik; Wernersson, Lars-Erik

    2017-10-11

    III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

  5. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  6. Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Rebohle, L.; Lehmann, J.; Prucnal, S.; Nazarov, A.; Tyagulskii, I.; Tyagulskii, S.; Kanjilal, A.; Voelskow, M.; Grambole, D.; Skorupa, W.; Helm, M.

    2009-01-01

    The anomalous wear-out phenomena of Eu-implanted metal-oxide-semiconductor devices were investigated. It will be shown that in contrast to other rare earth elements the electroluminescence (EL) intensity of Eu-implanted SiO 2 layers can rise under constant current injection before the known EL quenching will start. Under certain circumstances, this rise may amount up to two orders of magnitude. The EL behavior will be correlated with the microstructural and electrical properties of the devices. Transmission electron microscopy and Rutherford backscattering spectroscopy were applied to trace the development of Eu/Eu oxide clusters and the diffusion of Eu to the interfaces of the gate oxide layer. The hydrogen profile within the SiO 2 -SiON interface region was determined by nuclear reaction analysis. Current-voltage characteristics, EL decay times, and the progression of the voltage and the EL spectrum with increasing charge injection were measured to study charge and trapping phenomena in the oxide layer to reveal details of the EL excitation mechanism. A first qualitative model for the anomalous life time behavior is proposed.

  7. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  8. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  9. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Science.gov (United States)

    Konduru, Tharun; Rains, Glen C.; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  10. Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

    Science.gov (United States)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-06-01

    The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electrical properties of insulator/GaN interfaces, despite the fact that thermal oxidation of GaN surfaces at high temperatures proceeds by means of grain growth. Consequently, well-behaved capacitance-voltage characteristics of SiO2/GaOx/n-GaN stacked MOS capacitors with an interface state density (Dit) as low as 1.7 × 1011 cm-2 eV-1 were demonstrated. Moreover, the Dit value was further reduced for the SiO2/GaOx/GaN capacitor with a 2-nm-thick sputter-deposited GaOx interlayer. These results clearly indicate the intrinsically superior nature of the oxide/GaN interfaces and provide plausible guiding principles for fabricating high-performance GaN-MOS devices with thin GaOx interlayers.

  11. A low-voltage complementary metal-oxide semiconductor adapter circuit suitable for input rail-to-rail operation

    Science.gov (United States)

    Tadić, Nikša; Zogović, Milena; Banjević, Mirjana; Zimmermann, Horst

    2010-11-01

    In this article, a low-voltage complementary metal-oxide semiconductor (CMOS) input signal adapter (ISA) suitable for input rail-to-rail operation of various types of analogue basic building blocks is presented. The adapter acts as a pre-stage with infinite input resistance and linear transfer characteristics. Its input signal is translated into the region fitting the operating range of the following stage. The generality of the proposed method is proven through the application of the ISA in different types of analogue basic building blocks designed in 0.5 μm CMOS technology. They are the following: below-negative-rail-to-above-positive-rail voltage-controlled transconductor, quasi rail-to-rail voltage-controlled resistor (VCR), rail-to-rail operational amplifier (OA) and quasi rail-to-rail second generation current conveyor. The proposed negative resistance quasi rail-to-rail VCR and rail-to-rail OA have been used in a Sallen and Key band-pass filter. All of these analogue basic building blocks and their applications in the form of the Sallen and Key band-pass filter operate from a single supply of 1.5 V. Simulation results confirm the predictions of the analysis performed.

  12. Temperature Modulation with Specified Detection Point on Metal Oxide Semiconductor Gas Sensors for E-Nose Application

    Directory of Open Access Journals (Sweden)

    Arief SUDARMAJI

    2015-03-01

    Full Text Available Temperature modulation technique, some called dynamic measurement mode, on Metal-Oxide Semiconductor (MOS/MOX gas sensor has been widely observed and employed in many fields. We present its development, a Specified Detection Point (SDP on modulated sensing element of MOS sensor is applied which associated to its temperature modulation, temperature modulation-SDP so-named. We configured the rectangular modulation signal for MOS gas sensors (TGSs and FISs using PSOC CY8C28445-24PVXI (Programmable System on Chip which also functioned as acquisition unit and interface to a computer. Initial responses and selectivity evaluations were performed using statistical tool and Principal Component Analysis (PCA to differ sample gases (Toluene, Ethanol and Ammonia on dynamic chamber measurement under various frequencies (0.25 Hz, 1 Hz, 4 Hz and duty-cycles (25 %, 50 %, 75 %. We found that at lower frequency the response waveform of the sensors becomes more sloping and distinct, and selected modulations successfully increased the selectivity either on singular or array sensors rather than static temperature measurement.

  13. Electrical characteristic of metal-oxide-semiconductor with NiSi2 nanocrystals embedded in oxide layer

    Science.gov (United States)

    Tsai, Jenn-Kai; Lo, Ikai; Gau, M. H.; Chen, Y. L.; Yeh, P. H.; Chang, T. C.

    2006-03-01

    The nano-structured electronic devices have received more attention recently. Metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the oxide layer, HfO2/SiO2, has been fabricated. Comparing with conventional ones, it could be operated under lower voltage and faster program/erase speed and has better endurance and retention. We have measured the temperature-dependent tunneling V-I curve on these HfO2/SiO2 nano-structured devices for the temperature from 1.2K to 300K. The results show an abnormal electrical characteristic. The tunneling V-I characteristics appear a new threshold voltage in the low temperature region, from 30K to 100K, while applied a negative voltage. The abnormal threshold voltage disappears when the temperature higher than 150K or lower than 30K. We attribute the new threshold voltage to the discrete quantum states of NiSi2 nanocrystals in the oxide layer.

  14. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  15. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  16. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  17. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Directory of Open Access Journals (Sweden)

    Tharun Konduru

    2015-01-01

    Full Text Available A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone, acetonitrile (nitrile, ethyl acetate (ester, and ethanol (alcohol. The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm of methlypropyl sulfide and two concentrations (145 and 1452 ppm of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  18. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Science.gov (United States)

    Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

    2015-01-01

    In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high. PMID:28793583

  19. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  20. Metal Complex Dyes for Dye-Sensitized Solar Cells: Recent ...

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 15; Issue 9. Metal Complex Dyes for Dye-Sensitized Solar Cells: ... Author Affiliations. N Sekar1 Vishal Y Gehlot. Dyestuff Technology Department Institute of Chemical Technology (Formerly UDCT) Nathalal Parekh Marg Matunga Mumbai 400 019, India.

  1. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    NARCIS (Netherlands)

    Ghimbeu, C.M.; Lumbreras, M.; Schoonman, J.; Siadat, M.

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and

  2. Manipulating Conduction in Metal Oxide Semiconductors: Mechanism Investigation and Conductance Tuning in Doped Fe2O3 Hematite and Metal/Ga2O3/Metal Heterostructure

    Science.gov (United States)

    Zhao, Bo

    This study aims at understanding the fundamental mechanisms of conduction in several metal oxide semiconductors, namely alpha-Fe2O 3 and beta-Ga2O3, and how it could be tuned to desired values/states to enable a wide range of application. In the first effort, by adding Ti dopant, we successfully turned Fe2O3 from insulating to conductive by fabricated compositionally and structurally well-defined epitaxial alpha-(TixFe1-x)2 O3(0001) films for x ≤ 0.09. All films were grown by oxygen plasma assisted molecular beam epitaxy on Al2O3(0001) sapphire substrate with a buffer layer of Cr2O3 to relax the strain from lattice mismatch. Van der Pauw resistivity and Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm-3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V˙s. Such low mobility, unlike conventional band-conduction semiconductor, was attributed to hopping mechanism due to strong electron-phonon interaction in the lattice. More interestingly, conduction mechanism transitions from small-polaron hopping at higher temperatures to variable range hopping at lower temperatures with a transition temperature between 180 to 140 K. Consequently, by adding Ti dopant, conductive Fe 2O3 hematite thin films were achieved with a well-understood conducting mechanism that could guide further device application such as spin transistor and water splitting. In the case of Ga2O3, while having a band gap as high as 5 eV, they are usually conductive for commercially available samples due to unintentional Si doping. However, we discovered the conductance could be repeatedly switched between high resistance state and low resistance state when made into metal/Ga2O3 /metal heterostructure. However, to obtain well controlled switching process with consistent switching voltages and resistances, understanding switching mechanism is the key. In this study, we fabricated resistive switching devices utilizing a Ni/Ga2O3/Ir heterostructure. Bipolar

  3. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

    Science.gov (United States)

    Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

    2017-07-19

    The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  4. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments

    Directory of Open Access Journals (Sweden)

    Philip J. D. Peterson

    2017-07-01

    Full Text Available The potential of inexpensive Metal Oxide Semiconductor (MOS gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m − 3 and ozone precision of 26.8 μ g m − 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  5. Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

    Science.gov (United States)

    Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

    2018-02-01

    The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

  6. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    Science.gov (United States)

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure.

  7. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  8. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  9. Synthesis methods, microscopy characterization and device integration of nanoscale metal oxide semiconductors for gas sensing.

    Science.gov (United States)

    Vander Wal, Randy L; Berger, Gordon M; Kulis, Michael J; Hunter, Gary W; Xu, Jennifer C; Evans, Laura

    2009-01-01

    A comparison is made between SnO(2), ZnO, and TiO(2) single-crystal nanowires and SnO(2) polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H(2), are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine activation energies for the catalyst-assisted systems.

  10. Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

    Science.gov (United States)

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases.

  11. Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures

    Science.gov (United States)

    Nishi, Koichi; Yokoyama, Masafumi; Yokoyama, Haruki; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi

    2015-06-01

    We studied the impact of buffered HF (BHF) cleaning on the interface properties of Al2O3/InAs/GaSb metal-oxide-semiconductor (MOS) structures fabricated by the ex-situ surface cleaning process. The Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning exhibited lower Dit values than those fabricated with sulfur passivation. In addition, the Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning were robust with respect to the MOS field-effect transistor fabrication process by using W gate metal with PMA in the 250-300 °C range.

  12. MOS and oxide-charge-induced /OCI/ BSF solar cells

    Science.gov (United States)

    Neugroschel, A.

    1980-01-01

    New structures in which the heavily doped region in the base of a back-surface-field (BSF) solar cell is eliminated are proposed. Instead, the desired high concentration of majority carriers at the back surface is obtained by the Coulomb attraction utilizing the oxide formed on this surface. The origin of the Coulomb attraction is either charge in the oxide (OCI-BSF cell) or a small gate voltage which draws no power (MOS-BSF cell) applied to a metal-oxide-semiconductor structure.

  13. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  14. Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

    Science.gov (United States)

    Gan, Kwang-Jow; Tsai, Cher-Shiung; Liang, Dong-Shong; Wen, Chun-Ming; Chen, Yaw-Hwang

    2006-09-01

    A trivalued memory circuit based on two cascoded metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 μm SiGe process.

  15. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    OpenAIRE

    M. M. Aliyu; M. A. Islam; N. R. Hamzah; M. R. Karim; M. A. Matin; K. Sopian; N. Amin

    2012-01-01

    This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears...

  16. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  17. Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry.

    Science.gov (United States)

    Trattner, Sigal; Prinsen, Peter; Wiegert, Jens; Gerland, Elazar-Lars; Shefer, Efrat; Morton, Tom; Thompson, Carla M; Yagil, Yoad; Cheng, Bin; Jambawalikar, Sachin; Al-Senan, Rani; Amurao, Maxwell; Halliburton, Sandra S; Einstein, Andrew J

    2017-12-01

    Metal-oxide-semiconductor field-effect transistors (MOSFETs) serve as a helpful tool for organ radiation dosimetry and their use has grown in computed tomography (CT). While different approaches have been used for MOSFET calibration, those using the commonly available 100 mm pencil ionization chamber have not incorporated measurements performed throughout its length, and moreover, no previous work has rigorously evaluated the multiple sources of error involved in MOSFET calibration. In this paper, we propose a new MOSFET calibration approach to translate MOSFET voltage measurements into absorbed dose from CT, based on serial measurements performed throughout the length of a 100-mm ionization chamber, and perform an analysis of the errors of MOSFET voltage measurements and four sources of error in calibration. MOSFET calibration was performed at two sites, to determine single calibration factors for tube potentials of 80, 100, and 120 kVp, using a 100-mm-long pencil ion chamber and a cylindrical computed tomography dose index (CTDI) phantom of 32 cm diameter. The dose profile along the 100-mm ion chamber axis was sampled in 5 mm intervals by nine MOSFETs in the nine holes of the CTDI phantom. Variance of the absorbed dose was modeled as a sum of the MOSFET voltage measurement variance and the calibration factor variance, the latter being comprised of three main subcomponents: ionization chamber reading variance, MOSFET-to-MOSFET variation and a contribution related to the fact that the average calibration factor of a few MOSFETs was used as an estimate for the average value of all MOSFETs. MOSFET voltage measurement error was estimated based on sets of repeated measurements. The calibration factor overall voltage measurement error was calculated from the above analysis. Calibration factors determined were close to those reported in the literature and by the manufacturer (~3 mV/mGy), ranging from 2.87 to 3.13 mV/mGy. The error σ V of a MOSFET voltage

  18. Constructal Optimization of Top Contact Metallization of a Photovoltaic Solar Cell

    OpenAIRE

    Santanu Bandyopadhyay; Aditya Bhakta

    2005-01-01

    A top contact metallization of a photovoltaic solar cell collects the current generated by incident solar radiation. Several power-loss mechanisms are associated with the current flow through the front contact grid. The design of the top metal contact grid is one of the most important areas of efficient photovoltaic solar cell design. In this paper, an approach based on the constructal theory is proposed to design the grid pattern in a photovoltaic solar cell, minimizing total resistive losse...

  19. Research Update: Doping ZnO and TiO2 for solar cells

    Directory of Open Access Journals (Sweden)

    Robert L. Z. Hoye

    2013-12-01

    Full Text Available ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

  20. Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

    KAUST Repository

    Haque, Mohammed

    2017-07-10

    Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide-bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo-generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

  1. Multinary wurtzite-type oxide semiconductors: present status and perspectives

    Science.gov (United States)

    Suzuki, Issei; Omata, Takahisa

    2017-01-01

    Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors—β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2—and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.

  2. Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Şadan Özden

    2016-01-01

    Full Text Available Deposition of poly(4-vinyl phenol insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol/p-GaAs metal-oxide-semiconductor (MOS structure. Temperature was set to 80–320 K while the current-voltage (I-V characteristics of the structure were examined in the study. Ideality factor (n and barrier height (ϕb values found in the experiment ranged from 3.13 and 0.616 eV (320 K to 11.56 and 0.147 eV (80 K. Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.

  3. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    International Nuclear Information System (INIS)

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  4. A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Park, Mun-Soo; Na, Inmook; Wie, Chu R.

    2005-01-01

    n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

  5. Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

    Science.gov (United States)

    Ling, C.

    1995-01-01

    Fixed and interface trap charges in hot-carrier degraded metal oxide semiconductor field effect transistors (MOSFET's) can be distinguished by ultraviolet light (λ=253.7 nm) annealing, and observing the resultant changes in the gate-to-drain capacitance. Trapped electrons anneal readily, resulting in large changes in the gate capacitance and the threshold voltage. This suggests a trap level below the conduction band edge of SiO2 that is smaller than the photon energy (4.9 eV). In contrast, trapped holes and interface traps do not anneal, or anneal insignificantly even after prolonged irradiation. This is consistent with a much deeper hole trap level in SiO2, generally reported.

  6. Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Akhavan, Nima Dehdashti; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Yu, Ran; Fagas, Giorgos; Colinge, Jean-Pierre

    2010-08-01

    In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory.

  7. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    Science.gov (United States)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-29

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  8. Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

    Science.gov (United States)

    Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-12-01

    The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

  9. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  10. Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    N. P. Maity

    2014-01-01

    Full Text Available A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS structures using high-k materials ZrO2 and HfO2 has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage (C-V method and also conductance (G-V method. It indicates that, by reducing the effective oxide thickness (EOT, the interface charge densities (Dit increases linearly. For the same EOT, Dit has been found for the materials to be of the order of 1012 cm−2 eV−1 and it is originated to be in good agreement with published fabrication results at p-type doping level of 1×1017 cm−3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  11. Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

    Directory of Open Access Journals (Sweden)

    Yusuke Sakai

    2013-08-01

    Full Text Available The conditions for preparing normally-off GaN devices incorporating semi-insulating (SI GaN materials are explored. The properties of SI GaN where carbon behaves as a deep level acceptor are predicted using a Shockley diagram. Metal-oxide-semiconductor (MOS structures based upon these on SI-GaN layers are designed. The bandgap alignment of these structures is analyzed using Poisson equations. Normally-off operation is shown to be possible in devices featuring a thin n-GaN layer and SI-GaN layer, because of a higher conduction band energy. It is also shown that higher threshold voltage can be achieved by reducing the carrier concentration of the n-GaN channel layer.

  12. New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    Science.gov (United States)

    Te-Kuang Chiang,

    2010-07-01

    Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

  13. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    International Nuclear Information System (INIS)

    Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

    2015-01-01

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

  14. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

    Science.gov (United States)

    Li, Zuo; Khaled Husain, Muhammad; Yoshimoto, Hiroyuki; Tani, Kazuki; Sasago, Yoshitaka; Hisamoto, Digh; Fletcher, Jonathan David; Kataoka, Masaya; Tsuchiya, Yoshishige; Saito, Shinichi

    2017-07-01

    The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both p-type and n-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.

  15. A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis.

    Science.gov (United States)

    Hwa, Jae Hwa; Yoon, Young Jun; Lee, Hwan Gi; Yoo, Gwan Min; Cho, Eou-Sik; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

    2014-11-01

    This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z22- and Y-parameters up to 100 GHz operation frequency.

  16. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  17. Non-Stoichiometric SixN Metal-Oxide-Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate

    Science.gov (United States)

    Matsumoto, Mari; Ohba, Ryuji; Yasuda, Shin-ichi; Uchida, Ken; Tanamoto, Tetsufumi; Fujita, Shinobu

    2008-08-01

    The demand for random numbers for security applications is increasing. A conventional random number generator using thermal noise can generate unpredictable high-quality random numbers, but the circuit is extremely large because of large amplifier circuit for a small thermal signal. On the other hand, a pseudo-random number generator is small but the quality of randomness is bad. For a small circuit and a high quality of randomness, we purpose a non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor (MOSFET) noise source device. This device generates a very large noise signal without an amplifier circuit. As a result, it is shown that, utilizing a SiN MOSFET, we can attain a compact random number generator with a high generation rate near 1 Mbit/s, which is suitable for almost all security applications.

  18. Screenable silver and base metal solar cell contacts

    Science.gov (United States)

    Ross, B.

    1980-01-01

    The metallurgical soundness of the all-metal screenable thick film electrode system is established for silver and copper electrodes. Silver fluoride was identified as a successful etchant material and is found most effective in the liquid phase (435-460 C). Best results were achieved with the eutectic alloys of dopants and semiconductors. The air-fired silver inks were strongly adherent, rugged, and solderable, whereas the hydrogen-fired silver inks had very poor adhesion. A two-step firing process was devised in which copper inks containing silver fluoride were activated in a nitrogen atmosphere, with sintering done at the same or higher temperatures in hydrogen. Good solar cells were made using the copper paste back contacts demonstrating that the electrodes are not the limiting factors in efficiency.

  19. Topology optimization of front metallization patterns for solar cells

    NARCIS (Netherlands)

    Gupta, D.K.; Langelaar, M.; Barink, M.; Keulen, F. van

    2015-01-01

    This paper presents the application of topology optimization (TO) for designing the front electrode patterns for solar cells. Improving the front electrode design is one of the approaches to improve the performance of the solar cells. It serves to produce the voltage distribution for the front

  20. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  1. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  2. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  3. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  5. Topology optimization: An effective method for designing front metallization patterns of solar cells

    NARCIS (Netherlands)

    Gupta, D.K.; Langelaar, M.; Barink, M.; Keulen, F. van

    2014-01-01

    Optimal front electrode design is one of the approaches to improve the performance of solar cells. This work introduces the application of topology optimization (TO) to design complex front metallization patterns for solar cells. TO optimizes the distribution of electrode material on the front

  6. Lightweight and Flexible Metal Halide Perovskite Thin Films for High Temperature Solar Cells

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this project is to develop metal halide perovskites (MHPs) based solar cells for high temperature operation. MHPs have been recently discovered as high...

  7. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    growth of p-type layers, ferromagnetic behaviour in transition-metal doped oxide is also fuelling renewed interest from the spintronic point of view. Since some of the related reports remain controversial, a critical discussion of the magnetic properties of these doped oxides is made by Fukumura et al. Before the observation of electro-luminescence from the ZnO p-n homojunction reported by Tsukazaki et al (2005 Nature Mater. 4 42), the afore-mentioned advantages have been explored and exploited by alternative methods, such as heteroepitaxy in which p-n heterostructures can be obtained by depositing n-type ZnO films on other p-type oxides while still utilizing ZnO as their active layer. Researchers in Hosono's group observed the high-intensity band-edge emission from such heterostructures for the first time (Ohta H et al 2000 Appl. Phys. Lett. 77 475). They have also successfully extended their research fields to the development of a transparent oxide transistor based on homologous compounds, which is reviewed by Kamiya and Hosono in this special issue. As can be seen from these demonstrations, the advantage of oxides is, of course, based on the fact that many elements in the periodic table can form compounds with oxygen. Since the discovery of high-temperature superconductors, these multi-component oxides have exploited the new field known as the science of strongly correlated-electron materials, whose recent progress is reviewed by Inoue. Although the collection of papers included in this special issue covers a good cross-section of the development of oxide semiconductors and correlated-electron oxides to date, this is not meant to be exhaustive. There are a number of unavoidable omissions, such as theoretical studies except for some theoretical predictions on the room-temperature Bose-Einstein condensation of exciton-polaritons found in the article by Chichibu et al. We hope this issue promotes further development of this exciting field. The guest editors would like to

  8. Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers.

    Science.gov (United States)

    Hintikka, Mikko; Hallman, Lauri; Kostamovaara, Juha

    2017-12-01

    Timing walk error in pulsed time-of-flight based laser range finding was studied using two different types of laser diode drivers. The study compares avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor switch based laser pulse drivers, both producing 1.35 ns current pulse length (full width at half maximum), and investigates how the slowly rising part of the current pulse of the avalanche BJT based driver affects the leading edge timing walk. The walk error was measured to be very similar with both drivers within an input signal dynamic range of 1:10 000 (receiver bandwidth of 700 MHz) but increased rapidly with the avalanche BJT based driver at higher values of dynamic range. The slowly rising part does not exist in the current pulse produced by the metal-oxide-semiconductor (MOS) based laser driver, and thus the MOS based driver can be utilized in a wider dynamic range.

  9. Interface state density of SiO2/p-type 4H-SiC ( 0001 ), ( 11 2 ¯ 0 ), ( 1 1 ¯ 00 ) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

    Science.gov (United States)

    Kobayashi, Takuma; Nakazawa, Seiya; Okuda, Takafumi; Suda, Jun; Kimoto, Tsunenobu

    2016-04-01

    Interface properties of heavily Al-doped 4H-SiC ( 0001 ) (Si-face), ( 11 2 ¯ 0 ) (a-face), and ( 1 1 ¯ 00 ) (m-face) metal-oxide-semiconductor (MOS) structures were characterized from the low-temperature gate characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). From low-temperature subthreshold slopes, interface state density (Dit) at very shallow energy levels (ET) near the conduction band edge (Ec) was evaluated. We discovered that the Dit near Ec (Ec - 0.01 eV MOS structures with higher Al doping density for every crystal face (Si-, a-, and m-face). Linear correlation is observed between the channel mobility and Dit near Ec, and we concluded that the mobility drop observed in heavily doped MOSFETs is mainly caused by the increase of Dit near Ec.

  10. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  11. Real-time, multiplexed electrochemical DNA detection using an active complementary metal-oxide-semiconductor biosensor array with integrated sensor electronics

    Science.gov (United States)

    Levine, Peter M.; Gong, Ping; Levicky, Rastislav; Shepard, Kenneth L.

    2009-01-01

    Optical biosensing based on fluorescence detection has arguably become the standard technique for quantifying extents of hybridization between surface-immobilized probes and fluorophore-labeled analyte targets in DNA microarrays. However, electrochemical detection techniques are emerging which could eliminate the need for physically bulky optical instrumentation, enabling the design of portable devices for point-of-care applications. Unlike fluorescence detection, which can function well using a passive substrate (one without integrated electronics), multiplexed electrochemical detection requires an electronically-active substrate to analyze each array site and benefits from the addition of integrated electronic instrumentation to further reduce platform size and eliminate the electromagnetic interference that can result from bringing non-amplified signals off chip. We report on an active electrochemical biosensor array, constructed with a standard complementary metal-oxide-semiconductor (CMOS) technology, to perform quantitative DNA hybridization detection on chip using targets conjugated with ferrocene redox labels. A 4×4 array of gold working electrodes and integrated potentiostat electronics, consisting of control amplifiers and current-input analog-to-digital converters, on a custom-designed 5×3 mm2 CMOS chip drive redox reactions using cyclic voltammetry, sense DNA binding, and transmit digital data off chip for analysis. We demonstrate multiplexed and specific detection of DNA targets as well as real-time monitoring of hybridization, a task that is difficult, if not impossible, with traditional fluorescence-based microarrays. PMID:19054661

  12. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  13. Interfacial and electrical properties of Al2O3/GaN metal-oxide-semiconductor junctions with ultrathin AlN layer

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2017-12-01

    Ultrathin AlN layer deposited by atomic layer deposition (ALD) was employed in Al2O3/GaN metal-oxide-semiconductor (MOS) capacitors, and their interfacial and electrical properties were investigated using X-ray photoelectron spectroscopy (XPS) and current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. XPS analyses revealed that the diffusion of N atoms into Al2O3 and the degradation of Al2O3 film quality were significant for the thickest Al2O3 (10 nm). The sample with a 10-nm-thick Al2O3 layer produced the highest leakage current and trap density. These results may result from the deteriorated interface characteristics near the AlN layer caused by long growth time. Therefore, it is suggested that the Al2O3 thickness (and optimal growth time) is a key factor in Al2O3/AlN/GaN MOS capacitors.

  14. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  15. Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

    Science.gov (United States)

    Ťapajna, Milan; Kuzmík, Jan; Čičo, Karol; Pogany, Dionyz; Pozzovivo, Gianmauro; Strasser, Gottfried; Abermann, Stephan; Bertagnolli, Emmerich; Carlin, Jean-François; Grandjean, Nicolas; Fröhlich, Karol

    2009-09-01

    We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 °C. A deep-level transient spectroscopy based analysis revealed the maximum interface state density distributions Dit(E) up to 3×1013 and 1×1013 eV-1 cm-2 for the Al2O3/InAlN and ZrO2/InAlN interface, respectively. The integral densities of interface states correlate well with the trapping-related gate-lag effect in corresponding InAlN/GaN MOS high electron mobility transistors (HEMTs). This explains the strongly reduced lag effect in ZrO2 MOS HEMTs. We assume hole trapping at oxide/InAlN interface to be a dominant effect responsible for the gate-lag effect in InAlN/GaN MOS HEMTs.

  16. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    Science.gov (United States)

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-03

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer.

  17. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

    Science.gov (United States)

    Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

    2016-01-01

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

  18. Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

    Science.gov (United States)

    Wang, L. S.; Xu, J. P.; Liu, L.; Lu, H. H.; Lai, P. T.; Tang, W. M.

    2015-03-01

    InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm-2 eV-1 at midgap), smaller gate leakage current (9.5 × 10-5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.

  19. Slow response in gate current-voltage characteristics of metal-oxide-semiconductor structures on the 4H-SiC(000\\bar{1}) face

    Science.gov (United States)

    Kumagai, Naoki; Kimura, Hiroshi; Onishi, Yasuhiko; Okamoto, Mitsuo; Fukuda, Kenji

    2016-05-01

    We have investigated the gate current-voltage (I g-V g) characteristics of n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and p-MOS capacitors on the 4H-SiC(000\\bar{1}) face. The gate current response to a change in gate voltage has a very slow part, which has been considered to be due to slow traps in the oxide near the SiO2-SiC interface. However, we found that the slow response can be explained by fast interface traps if the traps have a relatively large concentration. Carrier injection into the interface traps results in a change in the surface potential, and this suppresses the further injection of carriers. This new model can explain many electrical properties such as the constant-current behavior in the I g-V g characteristics, which was confirmed by one-dimensional (1D) device simulation. According to this model, the interface traps will not be occupied up to the surface Fermi level within the general time scale of the measurement. In spite of the arguments described above, slow traps also probably exist near the interface between SiO2 and SiC.

  20. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

    2010-01-01

    This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

    2015-06-07

    Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

  2. An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

    Science.gov (United States)

    Yu, Eunseon; Cho, Seongjae; Park, Byung-Gook

    2017-09-01

    An essential and important method for physical and electrical characterization of a metal-oxide-semiconductor (MOS) structure is the capacitance-voltage (C-V) measurement. Judging from the C-V characteristics of a MOS structure, we are allowed to predict the DC and AC behaviors of the field-effect transistor and extract a set of primary parameters. The MOS field-effect transistor (MOSFET) technology has evolved to enhance the gate controllability over the channel in order for effectively suppressing the short-channel effects (SCEs) unwantedly taking place as device scaling progresses. For the goal, numerous novel structures have been suggested for the advanced MOSFET devices. However, the C-V characteristics of such novel MOS structures have not been seldom studied in depth. In this work, we report the C-V characteristics of ultra-thin-body (UTB) MOSFETs on the bulk Si and silicon-on-insulator (SOI) substrates by rigorous technology computer-aided design (TCAD) simulation. For higher credibility and accuracy, quantum-mechanical models are activated and empirical material parameters are employed from the existing literature. The MOSFET structure and the material configurations are schemed referring advanced logic technology suggested by the most recent technology roadmap. The C-V characteristics of UTB MOSFETs having a floating body with extremely small volume are closely investigated.

  3. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    Science.gov (United States)

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  4. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    International Nuclear Information System (INIS)

    Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

    2008-01-01

    Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

  5. Ink jet assisted metallization for low cost flat plate solar cells

    Science.gov (United States)

    Teng, K. F.; Vest, R. W.

    1987-01-01

    Computer-controlled ink-jet-assisted metallization of the front surface of solar cells with metalorganic silver inks offers a maskless alternative method to conventional photolithography and screen printing. This method can provide low cost, fine resolution, reduced process complexity, avoidance of degradation of the p-n junction by firing at lower temperature, and uniform line film on rough surface of solar cells. The metallization process involves belt furnace firing and thermal spiking. With multilayer ink jet printing and firing, solar cells of about 5-6 percent efficiency without antireflection (AR) coating can be produced. With a titanium thin-film underlayer as an adhesion promoter, solar cells of average efficiency 8.08 percent without AR coating can be obtained. This efficiency value is approximately equal to that of thin-film solar cells of the same lot. Problems with regard to lower inorganic content of the inks and contact resistance are noted.

  6. Metal Complex Dyes for Dye-Sensitized Solar Cells: Recent ...

    Indian Academy of Sciences (India)

    Dye-sensitized solar cells (DSSC) provide a technically and economically credible alternative concept to present day p–n junction photovoltaic devices. In contrast to the conventional systems where the semiconductor acts as light absorbent and charge carrier transport, the two functions are separated in DSSC.

  7. Increasing the solar cell power output by coating with transition metal-oxide nanorods

    International Nuclear Information System (INIS)

    Kuznetsov, I.A.; Greenfield, M.J.; Mehta, Y.U.; Merchan-Merchan, W.; Salkar, G.; Saveliev, A.V.

    2011-01-01

    Highlights: → Nanoparticles enhance solar cell efficiency. → Solar cell power increase by nanorod coating. → Metal-oxide nanorods are prepared in flames. → Molybdenum oxide nanorods effectively scatter light on solar cell surface. → Scattering efficiency depends on coating density. -- Abstract: Photovoltaic cells produce electric current through interactions among photons from an ambient light source and electrons in the semiconductor layer of the cell. However, much of the light incident on the panel is reflected or absorbed without inducing the photovoltaic effect. Transition metal-oxide nanoparticles, an inexpensive product of a process called flame synthesis, can cause scattering of light. Scattering can redirect photon flux, increasing the fraction of light absorbed in the thin active layer of silicon solar cells. This research aims to demonstrate that the application of transition metal-oxide nanorods to the surface of silicon solar panels can enhance the power output of the panels. Several solar panels were coated with a nanoparticle-methanol suspension, and the power outputs of the panels before and after the treatment were compared. The results demonstrate an increase in power output of up to 5% after the treatment. The presence of metal-oxide nanorods on the surface of the coated solar cells is confirmed by electron microscopy.

  8. Review on Metallic and Plastic Flexible Dye Sensitized Solar Cell

    International Nuclear Information System (INIS)

    Yugis, A R; Mansa, R F; Sipaut, C S

    2015-01-01

    Dye sensitized solar cells (DSSCs) are a promising alternative for the development of a new generation of photovoltaic devices. DSSCs have promoted intense research due to their low cost and eco-friendly advantage over conventional silicon-based crystalline solar cells. In recent years, lightweight flexible types of DSSCs have attracted much intention because of drastic reduction in production cost and more extensive application. The substrate that used as electrode of the DSSCs has a dominant impact on the methods and materials that can be applied to the cell and consequently on the resulting performance of DSSCs. Furthermore, the substrates influence significantly the stability of the device. Although the power conversion efficiency still low compared to traditional glass based DSSCs, flexible DSSCs still have potential to be the most efficient and easily implemented technology. (paper)

  9. An optimized metal grid design to improve the solar cell performance under solar concentration using multiobjective computation

    International Nuclear Information System (INIS)

    Djeffal, F.; Bendib, T.; Arar, D.; Dibi, Z.

    2013-01-01

    Highlights: ► A new MOGA-based approach to design the solar cell metal grid is proposed. ► The cell parameters have been ascertained including the high illumination effects. ► An improved electrical behavior of the solar cell is found. ► The proposed optimized metal grid design is suitable for photovoltaic applications. -- Abstract: In this paper, a new multiobjective genetic algorithm (MOGA)-based approach is proposed to optimize the metal grid design in order to improve the electrical performance and the conversion efficiency behavior of the solar cells under high intensities of illumination. The proposed approach is applied to investigate the effect of two different metal grid patterns (one with 2 busbars outside the active area (linear grid) and another one with a circular busbar surrounding the active area (circular grid)) on the electrical performance of high efficiency c-Si solar cells under concentrated light (up to 150 suns). The dimensional and electrical parameters of the solar cell have been ascertained, and analytical expressions of the power losses and conversion efficiency, including high illumination effects, have been presented. The presented analytical models are used to formulate different objective functions, which are the prerequisite of the multiobjective optimization. The optimized design can also be incorporated into photovoltaic circuit simulator to study the impact of our approach on the photovoltaic circuit design

  10. An optimized metal grid design to improve the solar cell performance under solar concentration using multiobjective computation

    Energy Technology Data Exchange (ETDEWEB)

    Djeffal, F., E-mail: faycal.djeffal@univ-batna.dz [LEA, Department of Electronics, University of Batna, 05000 Batna (Algeria); LEPCM, University of Batna, 05000 Batna (Algeria); Bendib, T.; Arar, D.; Dibi, Z. [LEA, Department of Electronics, University of Batna, 05000 Batna (Algeria)

    2013-05-15

    Highlights: ► A new MOGA-based approach to design the solar cell metal grid is proposed. ► The cell parameters have been ascertained including the high illumination effects. ► An improved electrical behavior of the solar cell is found. ► The proposed optimized metal grid design is suitable for photovoltaic applications. -- Abstract: In this paper, a new multiobjective genetic algorithm (MOGA)-based approach is proposed to optimize the metal grid design in order to improve the electrical performance and the conversion efficiency behavior of the solar cells under high intensities of illumination. The proposed approach is applied to investigate the effect of two different metal grid patterns (one with 2 busbars outside the active area (linear grid) and another one with a circular busbar surrounding the active area (circular grid)) on the electrical performance of high efficiency c-Si solar cells under concentrated light (up to 150 suns). The dimensional and electrical parameters of the solar cell have been ascertained, and analytical expressions of the power losses and conversion efficiency, including high illumination effects, have been presented. The presented analytical models are used to formulate different objective functions, which are the prerequisite of the multiobjective optimization. The optimized design can also be incorporated into photovoltaic circuit simulator to study the impact of our approach on the photovoltaic circuit design.

  11. Molecular solution processing of metal chalcogenide thin film solar cells

    Science.gov (United States)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  12. Combinatorial Discovery and Optimization of the Composition, Doping and Morphology of New Oxide Semiconductors for Efficient Photoelectrochemical Water Splitting

    Energy Technology Data Exchange (ETDEWEB)

    Parkinson, Bruce A. [Univ. of Wyoming, Laramie, WY (United States); Jianghua, He [Univ. of Wyoming, Laramie, WY (United States)

    2015-01-06

    The increasing need for carbon free energy has focused renewed attention on solar energy conversion. Although photovoltaic cells excel at directly converting of solar energy to electricity, they do not directly produce stored energy or fuels that account for more than 75% of current energy use. Direct photoelectrolysis of water has the advantage of converting solar energy directly to hydrogen, an ideal non-carbon and nonpolluting energy carrier, by replacing both a photovoltaic array and an electrolysis unit with one potentially inexpensive device. Unfortunately no materials are currently known to efficiently photoelectrolyze water that are, efficient, inexpensive and stable under illumination in electrolytes for many years. Nanostructured semiconducting metal oxides could potentially fulfill these requirements, making them the most promising materials for solar water photoelectrolysis, however no oxide semiconductor has yet been discovered with all the required properties. We have developed a simple, high-throughput combinatorial approach to prepare and screen many multi component metal oxides for water photoelectrolysis activity. The approach uses ink jet printing of overlapping patterns of soluble metal oxide precursors onto conductive glass substrates. Subsequent pyrolysis produces metal oxide phases that are screened for photoelectrolysis activity by measuring photocurrents produced by scanning a laser over the printed patterns in aqueous electrolytes. Several promising and unexpected compositions have been identified.

  13. Hydrophobic Organic Hole Transporters for Improved Moisture Resistance in Metal Halide Perovskite Solar Cells.

    Science.gov (United States)

    Leijtens, Tomas; Giovenzana, Tommaso; Habisreutinger, Severin N; Tinkham, Jonathan S; Noel, Nakita K; Kamino, Brett A; Sadoughi, Golnaz; Sellinger, Alan; Snaith, Henry J

    2016-03-09

    Solar cells based on organic-inorganic perovskite semiconductor materials have recently made rapid improvements in performance, with the best cells performing at over 20% efficiency. With such rapid progress, questions such as cost and solar cell stability are becoming increasingly important to address if this new technology is to reach commercial deployment. The moisture sensitivity of commonly used organic-inorganic metal halide perovskites has especially raised concerns. Here, we demonstrate that the hygroscopic lithium salt commonly used as a dopant for the hole transport material in perovskite solar cells makes the top layer of the devices hydrophilic and causes the solar cells to rapidly degrade in the presence of moisture. By using novel, low cost, and hydrophobic hole transporters in conjunction with a doping method incorporating a preoxidized salt of the respective hole transporters, we are able to prepare efficient perovskite solar cells with greatly enhanced water resistance.

  14. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-02-04

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

  15. Repeat analysis of intraoral digital imaging performed by undergraduate students using a complementary metal oxide semiconductor sensor: An institutional case study

    Science.gov (United States)

    Rahman, Nur Liyana Abdul; Asri, Amiza Aqiela Ahmad; Othman, Noor Ilyani; Wan Mokhtar, Ilham

    2017-01-01

    Purpose This study was performed to quantify the repeat rate of imaging acquisitions based on different clinical examinations, and to assess the prevalence of error types in intraoral bitewing and periapical imaging using a digital complementary metal-oxide-semiconductor (CMOS) intraoral sensor. Materials and Methods A total of 8,030 intraoral images were retrospectively collected from 3 groups of undergraduate clinical dental students. The type of examination, stage of the procedure, and reasons for repetition were analysed and recorded. The repeat rate was calculated as the total number of repeated images divided by the total number of examinations. The weighted Cohen's kappa for inter- and intra-observer agreement was used after calibration and prior to image analysis. Results The overall repeat rate on intraoral periapical images was 34.4%. A total of 1,978 repeated periapical images were from endodontic assessment, which included working length estimation (WLE), trial gutta-percha (tGP), obturation, and removal of gutta-percha (rGP). In the endodontic imaging, the highest repeat rate was from WLE (51.9%) followed by tGP (48.5%), obturation (42.2%), and rGP (35.6%). In bitewing images, the repeat rate was 15.1% and poor angulation was identified as the most common cause of error. A substantial level of intra- and interobserver agreement was achieved. Conclusion The repeat rates in this study were relatively high, especially for certain clinical procedures, warranting training in optimization techniques and radiation protection. Repeat analysis should be performed from time to time to enhance quality assurance and hence deliver high-quality health services to patients. PMID:29279822

  16. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  17. High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

    Science.gov (United States)

    Choi, Donghun; Harris, James S.; Kim, Eunji; McIntyre, Paul C.; Cagnon, Joel; Stemmer, Susanne

    2009-03-01

    We describe the molecular-beam epitaxial (MBE) growth and fabrication of III-V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates. We show that high-temperature in-situ H 2 annealing in the chemical-vapor deposition system changes the Ge surface configuration and produces a surface with predominantly double-step-layer conditions, which is crucial for the growth of single-domain GaAs. In addition, the surface morphology of III-V on Ge/Si improved significantly with an annealing treatment of the Ge surface carried out under high arsenic background pressure in the MBE chamber. This facilitates uniform As-monolayer formation on the entire Ge surface. Low-temperature migration-enhanced epitaxy (MEE) and low-temperature conventional GaAs growth not only enhance the growth of single-domain GaAs without Ge outdiffusion but also produce a sufficiently smooth surface for high-k dielectric deposition, achieving low leakage current. A 300-nm-thick GaAs buffer layer was grown, followed by a 10 nm growth of In 0.2Ga 0.8As high-mobility channel layer. A 7-8-nm-thick Al 2O 3 layer was deposited ex-situ by atomic-layer deposition (ALD). We verify the quality of III-V growth using transmission electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) measurement. The C-V characteristics show unpinning of the Fermi level, which is a necessary condition for gate voltage control of the drain current. This work suggests this materials combination is a promising candidate for the realization of advanced, nonclassical complementary-MOS and optoelectronic devices on Si substrates.

  18. Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

    Science.gov (United States)

    Lachab, M.; Sultana, M.; Fareed, Q.; Husna, F.; Adivarahan, V.; Khan, A.

    2014-04-01

    Unpassivated SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) exhibiting a thin barrier layer are investigated with a particular focus on their dc characteristics dependence on the gate length. The epiwafer exhibits a sheet resistance of ˜250 Ω/□ and a channel charge density of 7.4 × 1012 cm-2 deduced from the 1 MHz capacitance-voltage curves. The results indicate that the thickness of the AlInN barrier can be reduced below 5 nm without degradation of the insulated gate devices performance. For transistors with gate lengths (LG) between 1.8 and 2.0 µm, dc drain saturation currents densities as high as 1.8 A mm-1 are achieved at +4 V gate-source bias (VGS) with very low reverse gate leakage currents. The electron zero-bias drift mobility was determined to be 1670 cm2 V-1 s-1 from the low-field channel conductance measurements. On the other side, using an analytical model it is found that the maximum output current density at VGS = 0 V can be enhanced by ˜23% when LG is scaled from 1.8 µm down to 100 nm. With further improvement of the quality of the gate insulating oxide layer and the implementation of surface passivation, both with the aim of suppressing the observed current collapse, the presented results suggest that these MOSHEMTs could become very attractive for the realization of high-power electronics.

  19. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  20. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  1. Metal complex-based electron-transfer mediators in dye-sensitized solar cells

    Science.gov (United States)

    Elliott, C. Michael; Sapp, Shawn A.; Bignozzi, Carlo Alberto; Contado, Cristiano; Caramori, Stefano

    2006-03-28

    This present invention provides a metal-ligand complex and methods for using and preparing the same. In particular, the metal-ligand complex of the present invention is of the formula: L.sub.a-M-X.sub.b where L, M, X, a, and b are those define herein. The metal-ligand complexes of the present invention are useful in a variety of applications including as electron-transfer mediators in dye-sensitized solar cells and related photoelectrochromic devices.

  2. Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices

    Science.gov (United States)

    Mikawa, R. E.; Lenahan, P. M.

    1986-03-01

    We find that electrons emitted from silicon into the oxide of metal-oxide-silicon devices generate amphoteric trivalent silicon (Pb center) defects at the Si/SiO2 interface. The Pb centers are generated in numbers approximately equal to that of the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced Pb center interface states; this observation suggests that the trapping of electrons in the bulk of the oxides is in some way related to the creation of the Pb center interface state defects. We find that dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.

  3. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  4. Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

    Science.gov (United States)

    Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

    2017-10-02

    GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

  5. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

    OpenAIRE

    Kranz Lukas; Gretener Christina; Perrenoud Julian; Schmitt Rafael; Pianezzi Fabian; La Mattina Fabio; Blösch Patrick; Cheah Erik; Chirila Adrian; Fella Carolin M.; Hagendorfer Harald; Jäger Timo; Nishiwaki Shiro; Uhl Alexander R.; Buecheler S.

    2013-01-01

    Roll to roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low cost photovoltaic module production. However various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative...

  6. Passivation ability of graphene oxide demonstrated by two-different-metal solar cells

    Science.gov (United States)

    Hsu, Wen-Tzu; Tsai, Zong-Sian; Chen, Liang-Chun; Chen, Guan-Yu; Lin, Chun-Chieh; Chen, Mei-Hsin; Song, Jenn-Ming; Lin, Chu-Hsuan

    2014-12-01

    The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low thermal budget, large-area deposition, and fast production of surface passivation possible. The different procedures to incorporate graphene oxide in Si two-different-metal solar cells are compared, and 21% enhancement on the efficiency is possible with a suitable deposition method.

  7. Fabrication of Polymer Solar Cells Using Aqueous Processing for All Layers Including the Metal Back Electrode

    DEFF Research Database (Denmark)

    Søndergaard, Roar; Helgesen, Martin; Jørgensen, Mikkel

    2011-01-01

    The challenges of printing all layers in polymer solar cells from aqueous solution are met by design of inks for the electron-, hole-, active-, and metallic back electrode-layers. The conversion of each layer to an insoluble state after printing enables multilayer formation from the same solvent ...... (water). The photograph here was taken just before screen printing of the aqueous silver ink.......The challenges of printing all layers in polymer solar cells from aqueous solution are met by design of inks for the electron-, hole-, active-, and metallic back electrode-layers. The conversion of each layer to an insoluble state after printing enables multilayer formation from the same solvent...

  8. Nitride Conversion: A Novel Approach to c-Si Solar Cell Metallization

    Science.gov (United States)

    Hook, David Henry

    Metallization of commercial-grade c-Si solar cells is currently accomplished by screen-printing fine lines of a Ag/PbO-glass paste amalgam (Ag-frit) onto the insulating SiNx antireflective coating (ARC) that lies atop the shallow n-type emitter layer of the cell. Upon annealing, the glass etches SiNx and permits the crystallization of Ag near the electrically-active emitter interface, thus contacting the cell. While entirely functional, the contact interface produced by Ag-frit metallization is non-ideal, and Ag metal itself is expensive; its use adds to overall solar cell costs. The following work explores the use of Ti-containing alloys as metallization media for c-Si solar cells. There is a -176 kJ [mol N]--1 free energy change associated with the conversion of Si3N4 to TiN. By combining Ti with a low-melting point metal, this reaction can take place at temperatures as low as 750°C in the bulk. Combinations of Ti with Cu, Sn, Ag, and Pb ternary and binary systems are investigated. On unmetallized, c-Si textured solar cells it is shown that 900 nm of stoichiometric Ti6Sn 5 is capable of converting the SiNx ARC to TiN and Ti5Si3, both of which are conducting materials with electrically low-barriers to contact with n-type Si. Alongside electron microscopy, specific contact resistivity (rho c) measurements are used to determine the interfacial quality of TiN/Ti5Si3 contacts to n-Si. Circular transmission line model (CTLM) measurements are utilized for the characterization of reacted Ag0.05Cu0.69Ti0.26, Sn0.35 Ag0.27Ti0.38, and Ti6Sn5 contacts. rhoc values as low as 26 muOcm 2 are measured for reacted Ti6Sn5-SiN x on conventional c-Si solar cells. This value is approximately 2-3 orders of magnitude lower than rhoc of contacts produced by traditional Ag-frit metallization. Viable 1x1 cm, Ti6Sn5-metallized solar cells on 5x5 cm substrates were fabricated through a collaboration with the Georgia Institute of Technology (GA Tech). Front-side metallization was performed

  9. Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ming-Jer Jeng

    2015-10-01

    Full Text Available This work studies the use of gold (Au and silver (Ag nanoparticles in multicrystalline silicon (mc-Si and copper-indium-gallium-diselenide (CIGS solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies with nanoparticle concentration. Experimental results reveal that the mc-Si solar cells that incorporate Au nanoparticles outperform those with Ag nanoparticles. The incorporation of suitable concentration of Au and Ag nanoparticles into mc-Si solar cells increases their efficiency enhancement by 5.6% and 4.8%, respectively. Incorporating Au and Ag nanoparticles into CIGS solar cells improve their efficiency enhancement by 1.2% and 1.4%, respectively. The enhancement of the photocurrent in mc-Si solar cells is lower than that in CIGS solar cells, owing to their different light scattering behaviors and material absorption coefficients.

  10. Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

    Science.gov (United States)

    Schulze, D; Wolff, J; Rottke, D

    2014-01-01

    Objectives: The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Methods: Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO® head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). Results: The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; −5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; −14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; −16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Conclusions: Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region. PMID:25143020

  11. Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators

    Science.gov (United States)

    Hino, Aya; Morita, Shinya; Yasuno, Satoshi; Kishi, Tomoya; Hayashi, Kazushi; Kugimiya, Toshihiro

    2012-12-01

    Metal-oxide-semiconductor (MOS) diodes with various gate insulators (G/Is) were characterized by capacitance-voltage characteristics and isothermal capacitance transient spectroscopy (ICTS) to evaluate the effect of H and OH desorption and diffusion on the electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films. The density and the distribution of the space charge were found to be varied depending on the nature of the G/I. In the case of thermally grown SiO2 (thermal SiO2) G/Is, a high space-charge region was observed near the a-IGZO and G/I interface. After thermal annealing, the space-charge density in the deeper region of the film decreased, whereas remained unchanged near the interface region. The ICTS spectra obtained from the MOS diodes with the thermal SiO2 G/Is consisted of two broad peaks at around 5 × 10-4 and 3 × 10-2 s before annealing, while one broad peak was observed at around 1 × 10-4 s at the interface and at around 1 × 10-3 s in the bulk after annealing. Further, the trap density was considerably high near the interface. In contrast, the space-charge density was high throughout the bulk region of the MOS diode when the G/I was deposited by chemical vapor deposition (CVD). The ICTS spectra from the MOS diodes with the CVD G/Is revealed the existence of continuously distributed trap states, suggesting formations of high-density tail states below the conduction band minimum. According to secondary ion mass spectroscopy analyses, desorption and outdiffusion of H and OH were clearly observed in the CVD G/I sample. These phenomena could introduce structural fluctuations in the a-IGZO films, resulting in the formation of the conduction band tail states. Thin-film transistors (TFTs) with the same gate structure as the MOS diodes were fabricated to correlate the electronic properties with the TFT performance, and it was found that TFTs with the CVD G/I showed a reduced saturation mobility. These results indicate that the electronic structures

  12. Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology

    International Nuclear Information System (INIS)

    Emigh, Brent; Gordon, Christopher L.; Falkiner, Michelle; Thomas, Karen E.; Connolly, Bairbre L.

    2013-01-01

    There is a need for updated radiation dose estimates in pediatric fluoroscopy given the routine use of new dose-saving technologies and increased radiation safety awareness in pediatric imaging. To estimate effective doses for standardized pediatric upper gastrointestinal (UGI) examinations at our institute using direct dose measurement, as well as provide dose-area product (DAP) to effective dose conversion factors to be used for the estimation of UGI effective doses for boys and girls up to 10 years of age at other centers. Metal oxide semiconductor field-effect transistor (MOSFET) dosimeters were placed within four anthropomorphic phantoms representing children ≤10 years of age and exposed to mock UGI examinations using exposures much greater than used clinically to minimize measurement error. Measured effective dose was calculated using ICRP 103 weights and scaled to our institution's standardized clinical UGI (3.6-min fluoroscopy, four spot exposures and four examination beam projections) as determined from patient logs. Results were compared to Monte Carlo simulations and related to fluoroscope-displayed DAP. Measured effective doses for standardized pediatric UGI examinations in our institute ranged from 0.35 to 0.79 mSv in girls and were 3-8% lower for boys. Simulation-derived and measured effective doses were in agreement (percentage differences 0.18). DAP-to-effective dose conversion factors ranged from 6.5 x 10 -4 mSv per Gy-cm 2 to 4.3 x 10 -3 mSv per Gy-cm 2 for girls and were similarly lower for boys. Using modern fluoroscopy equipment, the effective dose associated with the UGI examination in children ≤10 years at our institute is < 1 mSv. Estimations of effective dose associated with pediatric UGI examinations can be made for children up to the age of 10 using the DAP-normalized conversion factors provided in this study. These estimates can be further refined to reflect individual hospital examination protocols through the use of direct organ

  13. Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

    KAUST Repository

    Bahabry, Rabab R

    2018-01-11

    The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

  14. Printed metal back electrodes for R2R fabricated polymer solar cells studied using the LBIC technique

    DEFF Research Database (Denmark)

    Krebs, Frederik C; Søndergaard, Roar; Jørgensen, Mikkel

    2011-01-01

    The performance of printable metal back electrodes for polymer solar cells were investigated using light beam induced current (LBIC) mapping of the final solar cell device after preparation to identify the causes of poor performance. Three different types of silver based printable metal inks were...

  15. Absorption enhancement in metal nanoparticles for photoemission current for solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia; Novitsky, Andrey; Malureanu, Radu

    2012-01-01

    In order to improve the photoconversion efficiency, we consider the possibility of increasing the photocurrent in solar cells exploiting the electron photoemission from small metal nanoparticles into a semiconductor. The effect is caused by the absorption of photons and generation of local surfac...

  16. The metal wrap through solar cell. Developement and characterisation; Die metal wrap through Solarzelle. Entwicklung und Charakterisierung

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Florian

    2009-03-20

    This work focuses on the development and the optimization of the metal wrap through (MWT) solar cell. Primary goal of this work has been the development of an appropriate process flow for MWT solar cells, which generates only insignificant extra costs compared to the conventional process flow, however, achieves a significant efficiency increase for MWT cells compared to conventionally processed cells. The latter was one of the main challenges of this work. For this purpose MWT solar cells have been studied and characterized in detail. Loss mechanisms have been detected and improvements evaluated as well as transferred to the cell process. Furthermore, the assembling process for MWT solar cells in the module has been optimized focusing on less series resistance losses. A comparison with the conventional module assembling process is presented. A process flow similar to the one for the conventional process has been developed for MWT solar cells. Merely two additional laser process steps for hole drilling and rear contact isolation as well as one screen printing step for the through connection turn out to be necessary. It is shown that the additional screen printing process can be omitted without significant efficiency losses, if the through connection and solder pad metallization is done in a single process step. Furthermore, a fast and reliable through connection process has been developed and characterized in detail. Moreover, a gauge mounting block for MWT solar cells has been constructed, analyzed and calibrated for current-voltage-characteristic measurements. With multi crystalline MWT silicon solar cells an efficiency gain up to 0.5% absolute has been achieved compared to conventionally processed solar cells - thereby reaching a maximum cell efficiency of more than 16.7%. Due to a novel MWT module technology developed in this work the efficiency compared to the conventional technology could be improved further by another 0.3% absolute. The primary loss

  17. Transmissive metallic contact for amorphous silicon solar cells

    Science.gov (United States)

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  18. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  19. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

    Science.gov (United States)

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M.; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R.; Buecheler, Stephan; Tiwari, Ayodhya N.

    2013-08-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  20. Embedded Metal Electrode for Organic-Inorganic Hybrid Nanowire Solar Cells.

    Science.gov (United States)

    Um, Han-Don; Choi, Deokjae; Choi, Ahreum; Seo, Ji Hoon; Seo, Kwanyong

    2017-06-27

    We demonstrate here an embedded metal electrode for highly efficient organic-inorganic hybrid nanowire solar cells. The electrode proposed here is an effective alternative to the conventional bus and finger electrode which leads to a localized short circuit at a direct Si/metal contact and has a poor collection efficiency due to a nonoptimized electrode design. In our design, a Ag/SiO 2 electrode is embedded into a Si substrate while being positioned between Si nanowire arrays underneath poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), facilitating suppressed recombination at the Si/Ag interface and notable improvements in the fabrication reproducibility. With an optimized microgrid electrode, our 1 cm 2 hybrid solar cells exhibit a power conversion efficiency of up to 16.1% with an open-circuit voltage of 607 mV and a short circuit current density of 34.0 mA/cm 2 . This power conversion efficiency is more than twice as high as that of solar cells using a conventional electrode (8.0%). The microgrid electrode significantly minimizes the optical and electrical losses. This reproducibly yields a superior quantum efficiency of 99% at the main solar spectrum wavelength of 600 nm. In particular, our solar cells exhibit a significant increase in the fill factor of 78.3% compared to that of a conventional electrode (61.4%); this is because of the drastic reduction in the metal/contact resistance of the 1 μm-thick Ag electrode. Hence, the use of our embedded microgrid electrode in the construction of an ideal carrier collection path presents an opportunity in the development of highly efficient organic-inorganic hybrid solar cells.

  1. Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lee, Benjamin G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); LaSalvia, Vincenzo A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-03-14

    The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesive loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.

  2. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

    Science.gov (United States)

    Litzov, Ivan; Brabec, Christoph J

    2013-12-10

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

  3. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

    Directory of Open Access Journals (Sweden)

    Ivan Litzov

    2013-12-01

    Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

  4. Formation and Diffusion of Metal Impurities in Perovskite Solar Cell Material CH3NH3PbI3: Implications on Solar Cell Degradation and Choice of Electrode.

    Science.gov (United States)

    Ming, Wenmei; Yang, Dongwen; Li, Tianshu; Zhang, Lijun; Du, Mao-Hua

    2018-02-01

    Solar cells based on methylammonium lead triiodide (MAPbI 3 ) have shown remarkable progress in recent years and have demonstrated efficiencies greater than 20%. However, the long-term stability of MAPbI 3 -based solar cells has yet to be achieved. Besides the well-known chemical and thermal instabilities, significant native ion migration in lead halide perovskites leads to current-voltage hysteresis and photoinduced phase segregation. Recently, it is further revealed that, despite having excellent chemical stability, the Au electrode can cause serious solar cell degradation due to Au diffusion into MAPbI 3 . In addition to Au, many other metals have been used as electrodes in MAPbI 3 solar cells. However, how the external metal impurities introduced by electrodes affect the long-term stability of MAPbI 3 solar cells has rarely been studied. A comprehensive study of formation energetics and diffusion dynamics of a number of noble and transition metal impurities (Au, Ag, Cu, Cr, Mo, W, Co, Ni, Pd) in MAPbI 3 based on first-principles calculations is reported herein. The results uncover important general trends of impurity formation and diffusion in MAPbI 3 and provide useful guidance for identifying the optimal metal electrodes that do not introduce electrically active impurity defects in MAPbI 3 while having low resistivities and suitable work functions for carrier extraction.

  5. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.

    2018-01-02

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  6. Metal Complex Dyes for Dye-Sensitized Solar Cells: Recent ...

    Indian Academy of Sciences (India)

    Compared with organic dyes, inorganic metal complex dyes have high thermal and chemical stability. Among these complexes, polypyridyl ruthenium sensitizers were widely used and investi- gated for their high stability and outstanding redox properties and good response to natural visible sunlight. The sensitizers an-.

  7. Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors: possible future materials for solar energy applications.

    Science.gov (United States)

    Bhaumik, Anagh; Shearin, Austin M; Patel, Rishi; Ghosh, Kartik

    2014-06-14

    The optical absorption coefficient is a crucial parameter in determining solar cell efficiency under operational conditions. It is well known that inorganic nanocrystals are a benchmark model for solar cell nanotechnology, given that the tunability of optical properties and stabilization of specific phases are uniquely possible at the nanoscale. A hydrothermal method was employed to fabricate nanostructured copper oxides where the shape, size and phase were tailored by altering the growth parameters, namely the base media used, the reaction temperature, and the reaction time. The nano crystalline structures, phases, morphology, molecular vibrational modes, and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), and UV-vis spectroscopy. A significantly large optical absorption coefficient, of the order of twice that of Si in the visible range, was observed in a particular phase mixture of nanostructured copper oxides. An optical absorption coefficient of 7.05 10(+5) cm(-1) at 525 nm was observed in a particular nanostructured phase mixture of copper oxides which is appreciably larger than commercially pure CuO (1.19 10(+5) cm(-1)) and Si (1.72 10(+5) cm(-1)). A possible mechanism of formation of phase mixtures and morphology of copper oxides has also been discussed, which opens up a roadmap in synthesis of similar morphology nanostructures for efficient solar cells.

  8. Enhanced Contacts for Inverted Metamorphic Multi-Junction Solar Cells Using Carbon Nanotube Metal Matrix Composites

    Science.gov (United States)

    2018-01-18

    AFRL-RV-PS- AFRL-RV-PS- TR-2017-0125 TR-2017-0125 ENHANCED CONTACTS FOR INVERTED METAMORPHIC MULTI-JUNCTION SOLAR CELLS USING CARBON NANOTUBE METAL...Rochester, NY 14604-5603 18 Jan 2018 Final Report APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED. AIR FORCE RESEARCH LABORATORY Space...ACCORDANCE WITH ASSIGNED DISTRIBUTION STATEMENT. DAVID WILT PAUL HAUSGEN, Ph.D. Program Manager Technical Advisor, Spacecraft Component Technology

  9. Final Report: Sintered CZTS Nanoparticle Solar Cells on Metal Foil; July 26, 2011 - July 25, 2012

    Energy Technology Data Exchange (ETDEWEB)

    Leidholm, C.; Hotz, C.; Breeze, A.; Sunderland, C.; Ki, W.; Zehnder, D.

    2012-09-01

    This is the final report covering 12 months of this subcontract for research on high-efficiency copper zinc tin sulfide (CZTS)-based thin-film solar cells on flexible metal foil. Each of the first three quarters of the subcontract has been detailed in quarterly reports. In this final report highlights of the first three quarters will be provided and details will be given of the final quarter of the subcontract.

  10. Preparation and immobilization of noble metal nanoparticles for plasmonic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ruoli; Pitzer, Martin; Hu, DongZhi; Schaadt, Daniel M. [Institut fuer Angewandte Physik, Karlsruher Institut fuer Technologie (KIT), Karlsruhe (Germany); DFG Centrum fuer Funktionelle Nanostrukturen (CFN), KIT (Germany); Fruk, Ljiljana [DFG Centrum fuer Funktionelle Nanostrukturen (CFN), KIT (Germany)

    2011-07-01

    Thin-film solar cells are of high interest due to good electrical properties and low material consumption. Traditional thin-film cells, however, have considerable transmission losses because of the reduced absorption volume. A promising way to enhance absorption in the active layer is the light-trapping by plasmonic nanostructures. Metallic nanoparticles have in particular shown large enhancement of the photocurrent in thin-film devices. In this poster, we present preparation of Au,Ag and Pt nanoparticles by polyol method and seed mediated methods for use in plasmonic solar cells. Polyol method typically uses ethylene glycol as the solvent and reducing agent,and in seed-mediated synthesis small nanoparticle seeds are first prepared and then used to promote the growth of different shapes of nanoparticles. We particularly focus on the use of nanocubes and nanospheres for solar cell design. Following the nanoparticle preparation, a new method to immobilize particles on GaAs surfaces via covalent chemical bonds has been developed which prevents agglomerations and allows control of the surface density. Photocurrent spectra of GaAs pin solar cells with and without particles have been recorded. These measurements show the dependence of the photocurrent enhancement on particle material, shape and density.

  11. Solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wendel, W.

    1977-03-03

    A solar collector is described. The absorber consists of a plate onto which the light is focussed through lenses. The heat is transported from the absorber to the heat accumulator via metallic heat conductors. In case of insufficient solar radiation, the heat transport from the collector to the accumulator may be interrupted by a disconnecting switch. The casing consists of Eternit.

  12. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  13. Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

    Science.gov (United States)

    Ma, Xiao-Hua; Zhu, Jie-Jie; Liao, Xue-Yang; Yue, Tong; Chen, Wei-Wei; Hao, Yue

    2013-07-01

    In this letter, the interface traps of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were characterized quantitatively by dynamic capacitance dispersion technique. An analysis of Al2O3/AlGaN interface states demonstrated deep traps in the range of 0.53 eV-1.16 eV below the conduction band, with trap density nearly constant and two orders of magnitude smaller than that at AlGaN surface due to the use of atomic layer deposition-grown Al2O3 insulator. As much as 2.23 × 1013 eV-1 cm-2 fast traps with time constant smaller than 0.3 μs were observed at AlGaN/GaN interface of MOS-HEMTs, which was consistent with the qualitative prediction from pulsed I-V test.

  14. Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

    Science.gov (United States)

    Watanabe, Kenta; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-07-01

    Important clues for achieving well-behaved AlGaN/GaN metal-oxide-semiconductor (MOS) devices with Al-based gate dielectrics were systematically investigated on the basis of electrical and physical characterizations. We found that low-temperature deposition of alumina insulators on AlGaN surfaces is crucial to improve the interface quality, thermal stability, and variability of MOS devices by suppressing Ga diffusion into the gate oxides. Moreover, aluminum oxynitride grown in a reactive nitric atmosphere was proven to expand the optimal process window that would improve the interface quality and to enhance immunity against charge injection into the gate dielectrics. The results constitute common guidelines for achieving high-performance and reliable AlGaN/GaN MOS devices.

  15. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Anh Khoa Augustin [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Pourtois, Geoffrey [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Department of Chemistry, Plasmant Research Group, University of Antwerp, B-2610 Wilrijk-Antwerp (Belgium); Agarwal, Tarun [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Department of Electrical Engineering, University of Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Afzalian, Aryan [TSMC, Kapeldreef 75, B-3001 Leuven (Belgium); Radu, Iuliana P. [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium); Houssa, Michel [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium)

    2016-01-25

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  16. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    International Nuclear Information System (INIS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-01

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs

  17. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er{sub 2}O{sub 3} as a gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-10-01

    In this study, the rare earth erbium oxide (Er{sub 2}O{sub 3}) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N{sub t}) of the MOS–HEMT were 125 mV/decade and 4.3 × 10{sup 12} cm{sup −2}, respectively. The dielectric constant of the Er{sub 2}O{sub 3} layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er{sub 2}O{sub 3} MOS–HEMT. - Highlights: ► GaN/AlGaN/Er{sub 2}O{sub 3} metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er{sub 2}O{sub 3} with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I{sub ON}/I{sub OFF} ratio.

  18. Metal Selenides as Efficient Counter Electrodes for Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Jin, Zhitong; Zhang, Meirong; Wang, Min; Feng, Chuanqi; Wang, Zhong-Sheng

    2017-04-18

    Solar energy is the most abundant renewable energy available to the earth and can meet the energy needs of humankind, but efficient conversion of solar energy to electricity is an urgent issue of scientific research. As the third-generation photovoltaic technology, dye-sensitized solar cells (DSSCs) have gained great attention since the landmark efficiency of ∼7% reported by O'Regan and Grätzel. The most attractive features of DSSCs include low cost, simple manufacturing processes, medium-purity materials, and theoretically high power conversion efficiencies. As one of the key materials in DSSCs, the counter electrode (CE) plays a crucial role in completing the electric circuit by catalyzing the reduction of the oxidized state to the reduced state for a redox couple (e.g., I 3 - /I - ) in the electrolyte at the CE-electrolyte interface. To lower the cost caused by the typically used Pt CE, which restricts the large-scale application because of its low reserves and high price, great effort has been made to develop new CE materials alternative to Pt. A lot of Pt-free electrocatalysts, such as carbon materials, inorganic compounds, conductive polymers, and their composites with good electrocatalytic activity, have been applied as CEs in DSSCs in the past years. Metal selenides have been widely used as electrocatalysts for the oxygen reduction reaction and light-harvesting materials for solar cells. Our group first expanded their applications to the DSSC field by using in situ-grown Co 0.85 Se nanosheet and Ni 0.85 Se nanoparticle films as CEs. This finding has inspired extensive studies on developing new metal selenides in order to seek more efficient CE materials for low-cost DSSCs, and a lot of meaningful results have been achieved in the past years. In this Account, we summarize recent advances in binary and mutinary metal selenides applied as CEs in DSSCs. The synthetic methods for metal selenides with various morphologies and stoichiometric ratios and

  19. Flexible polymer solar cells based on Ag metallic grids and functional reduced graphene oxide composite electrode

    Science.gov (United States)

    Zheng, Qiao; Cheng, Shuying; Jia, Hongjie; Zhang, Hong; Liu, Si; Lai, Yunfeng; Yu, Jinling; Zhou, Haifang

    2017-10-01

    By combining the appropriate Ag metallic grids with a thin functional reduced graphene oxide (MGs/F-rGO) film, a suitable photoelectric flexible electrode of the polymer solar cells (PSCs) is obtained. The conductivity and transmission of the MGs/F-rGO composited films can be improved by HNO3 modified. The optimized sheet resistance and transmission of the flexible electrode achieve to 25 Ω □-1 and 83% at 550 nm wavelength. Flexible PSCs with the MGs/F-rGO electrode show 5.63% power conversion efficiency. The photoelectric properties of the MGs/F-rGO film comparable with that of ITO substrates guarantee a high short current and an enhanced PCE of the solar cells. This method provides a feasible way for fabricating low-cost and flexible PSCs.

  20. Solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Tsukamoto, Moriaki; Hayashibara, Mitsuo

    1988-08-18

    Concerning the exsisting solar cell utilizing wavelength transition, the area of the solar cell element necessary for unit electric power output can be made small, but transition efficiency of the solar cell as a whole including a plastic plate with phosphor is not high. This invention concerns a solar cell which is appropriate for transferring the light within a wide spectrum range of the sunlight to electricilty efficiently, utilizes wavelength transition and has high efficiency per unit area. In other words, the solar cell of this invention has the feature of providing in parallel with a photoelectric transfer layer a layer of wavelength transitioning material (phosphor) which absorbs the light within the range of wavelength of low photoelectric transfer efficiency at the photoelectric transfer layer and emits the light within the range of wavelength in which the photoelectric transfer rate is high on the light incident side of the photoelectric transfer layer. (5 figs)

  1. Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    Science.gov (United States)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Brunner, F.; Cho, E.-M.; Hashizume, T.; Kuzmík, J.

    2014-09-01

    Oxide/semiconductor interface trap density (Dit) and net charge of Al2O3/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. Dit distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher Dit (˜5-8 × 1012 eV-1 cm-2) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (Dit ˜ 2-3 × 1012 eV-1 cm-2) where the GaN cap was selectively etched away. Dit distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high Dit (>1013 eV-1 cm-2) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher Dit centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al2O3 thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  2. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    Science.gov (United States)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  3. Corrosion Monitoring of Flexible Metallic Substrates for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Trystan Watson

    2013-01-01

    Full Text Available Two techniques for monitoring corrosion within a dye-sensitized solar cell (DSC system are presented, which enable continuous, high sensitivity, in situ measurement of electrolyte breakdown associated with DSCs fabricated on metals. The first method uses UV/Vis reflectance spectrophotometry in conjunction with encapsulation cells, which incorporate a 25 μm thick electrolyte layer, to provide highly resolved triiodide absorption data. The second method uses digital image capture to extract colour intensity data. Whilst the two methods provide very similar kinetic data on corrosion, the photographic method has the advantage that it can be used to image multiple samples in large arrays for rapid screening and is also relatively low cost. This work shows that the triiodide electrolyte attacks most metals that might be used for structural applications. Even a corrosion resistant metal, such as aluminium, can be induced to corrode through surface abrasion. This result should be set in the context with the finding reported here that certain nitrogen containing heterocyclics used in the electrolyte to enhance performance also act as corrosion inhibitors with significant stabilization for metals such as iron. These new techniques will be important tools to help develop corrosion resistant metal surfaces and corrosion inhibiting electrolytes for use in industrial scale devices.

  4. Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

    2018-03-01

    Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. PbS/CdS-sensitized mesoscopic SnO2 solar cells for enhanced infrared light harnessing.

    Science.gov (United States)

    Hossain, Md Anower; Koh, Zhen Yu; Wang, Qing

    2012-05-28

    Metal oxide semiconductors with lower lying conduction band minimum and superior electron mobility are essential for efficient charge separation and collection in PbS-sensitized solar cells. In the present study, mesoscopic SnO(2) was investigated as an alternative photoanode to the commonly used TiO(2) and examined comprehensively in PbS-sensitized liquid junction solar cells. To exploit the capability of PbS in an optimized structure, cascaded nPbS/nCdS and alternate n(PbS/CdS) layers deposited by a successive ionic layer adsorption and reaction method were systematically scrutinized. It was observed that the surface of SnO(2) has greater affinity to the growth of PbS compared with TiO(2), giving rise to much enhanced light absorption. In addition, the deposition of a CdS buffer layer and a ZnS passivation layer before and after a PbS layer was found to be beneficial for efficient charge separation. Under optimized conditions, cascaded PbS/CdS-sensitized SnO(2) exhibited an unprecedented photocurrent density of 17.38 mA cm(-2) with pronounced infrared light harvesting extending beyond 1100 nm, and a power conversion efficiency of 2.23% under AM 1.5, 1 sun illumination. In comparison, TiO(2) cells fabricated under similar conditions showed much inferior performance owing to the less efficient light harnessing of long wavelength photons. We anticipate that the systematic study of PbS-sensitized solar cells utilizing different metal oxide semiconductors as electron transporters would provide useful insights and promote the development of semiconductor-sensitized mesoscopic solar cells employing panchromatic sensitizers.

  6. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, Vellayappan Dheivanayagam; Shen, Lei, E-mail: shenlei@nus.edu.sg [Engineering Science Programme, National University of Singapore, 9 Engineering Drive 1, Singapore 117575 (Singapore); Linghu, Jiajun; Zhang, Chun; Feng, Yuan Ping [Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2016-03-21

    Using the many-body perturbation GW theory, we study the quasiparticle conduction-band offsets of phosphorene, a two-dimensional atomic layer of black phosphorus, and transition-metal dichalcogenides (TMDs). The calculated large exciton binding energies of phosphorene and TMDs indicate that their type-II heterostructures are suitable for excitonic thin-film solar cell applications. Our results show that these heterojunctions have a potential maximum power conversion efficiency of up to 12%, which can be further enhanced up to 20% by strain engineering.

  7. Development of technique for air coating and nickel and copper metalization of solar cells

    Science.gov (United States)

    1982-01-01

    Solar cells were made with a variety of base metal screen printing inks applied over silicon nitride AR coating and copper electroplated. Fritted and fritless nickel and fritless tin base printing inks were evaluated. Conversion efficiencies as high as 9% were observed with fritted nickel ink contacts, however, curve shapes were generally poor, reflecting high series resistance. Problems encountered in addition to high series reistance included loss of adhesion of the nickel contacts during plating and poor adhesion, oxidation and inferior curve shapes with the tin base contacts.

  8. Development of crystalline silicon based metal wrap through (MWT) solar cells for low concentrator (2-30x) applications

    OpenAIRE

    Fellmeth, T.; Fritz, S.; Menkö, M.; Mingirulli, N.; Glatthaar, M.; Clement, F.; Biro, D.; Preu, R.

    2009-01-01

    One of the main barriers on the way to mass production of concentrator silicon solar cells is the lack of industrially feasible process sequences. Therefore, a concentrator silicon based Metal Wrap Through (CMWT) solar cell completely processed at the Fraunhofer ISE PhotoVoltaic Technology Evaluation Center (PV-TEC) is introduced. This means no clean room or photolithographic steps are necessary. Under one-sun conditions, a conversion efficiency of 18.6% could be reached which is so far the h...

  9. Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

    International Nuclear Information System (INIS)

    Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

    2012-01-01

    Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

  10. Fully solution-processed organic solar cells on metal foil substrates

    KAUST Repository

    Gaynor, Whitney

    2009-08-19

    We demonstrate fully solution-processed organic photovoltaic cells on metal foil substrates with power conversion efficiencies similar to those obtained in devices on transparent substrates. The cells are based on the regioregular poly- (3-hexylthiophene) and C61 butyric acid methyl ester bulk heterojunction system. The bottom electrode is a silver film whose workfunction is lowered by Cs2CO3 using spin-coating to serve as a cathode. The transparent top anode consists of a conductive polymer in combination with a solution-processed silver nanowire mesh that is laminated onto the devices. Each layer of the device, including the transparent electrode, is fabricated from solution, giving rise to the possibility of completely printed solar cells on low-cost substrates.

  11. High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation.

    Science.gov (United States)

    Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

    2015-03-12

    Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.

  12. Aperiodic and randomized dielectric mirrors: alternatives to metallic back reflectors for solar cells.

    Science.gov (United States)

    Lin, Albert; Zhong, Yan-Kai; Fu, Sze-Ming; Tseng, Chi Wei; Yan, Sheng Lun

    2014-05-05

    Dielectric mirrors have recently emerged for solar cells due to the advantages of lower cost, lower temperature processing, higher throughput, and zero plasmonic absorption as compared to conventional metallic counterparts. Nonetheless, in the past, efforts for incorporating dielectric mirrors into photovoltaics were not successful due to limited bandwidth and insufficient light scattering that prevented their wide usage. In this work, it is shown that the key for ultra-broadband dielectric mirrors is aperiodicity, or randomization. In addition, it has been proven that dielectric mirrors can be widely applicable to thin-film and thick wafer-based solar cells to provide for light trapping comparable to conventional metallic back reflectors at their respective optimal geometries. Finally, the near-field angular emission plot of Poynting vectors is conducted, and it further confirms the superior light-scattering property of dielectric mirrors, especially for diffuse medium reflectors, despite the absence of surface plasmon excitation. The preliminary experimental results also confirm the high feasibility of dielectric mirrors for photovoltaics.

  13. Nanoarchitectures in dye-sensitized solar cells: metal oxides, oxide perovskites and carbon-based materials.

    Science.gov (United States)

    Shaikh, Jasmin S; Shaikh, Navajsharif S; Mali, Sawanta S; Patil, Jyoti V; Pawar, Krishna K; Kanjanaboos, Pongsakorn; Hong, Chang Kook; Kim, J H; Patil, Pramod S

    2018-03-15

    Dye-sensitized solar cells (DSSCs) have aroused great interest and been regarded as a potential renewable energy resource among the third-generation solar cell technologies to fulfill the 21 st century global energy demand. DSSCs have notable advantages such as low cost, easy fabrication process and being eco-friendly in nature. The progress of DSSCs over the last 20 years has been nearly constant due to some limitations, like poor long-term stability, narrow absorption spectrum, charge carrier transportation and collection losses and poor charge transfer mechanism for regeneration of dye molecules. The main challenge for the scientific community is to improve the performance of DSSCs by using different approaches, like finding new electrode materials with suitable nanoarchitectures, dyes in composition with promising semiconductors and metal quantum dot fluorescent dyes, and cost-effective hole transporting materials (HTMs). This review focuses on DSSC photo-physics, which includes charge separation, effective transportation, collection and recombination processes. Different nanostructured materials, including metal oxides, oxide perovskites and carbon-based composites, have been studied for photoanodes, and counter electrodes, which are crucial to achieve DSSC devices with higher efficiency and better stability.

  14. Optimizing front metallization patterns: Efficiency with aesthetics in free-form solar cells

    NARCIS (Netherlands)

    Gupta, D.K.; Langelaar, M.; Barink, M.; Keulen, F. van

    2016-01-01

    Free-form solar cells are cells of unconventional shapes (e.g. hexagonal, leaf-shaped etc). Their flexible shape adds to the aesthetics of the surroundings as well as allows to place them over objects where conventional solar cells might not fit. Evidently, these cells need to be efficient as well,

  15. Cascading metallic gratings for broadband absorption enhancement in ultrathin plasmonic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Long; Sun, Fuhe [Key Laboratory of Nanodevices and Applications-CAS and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Chen, Qin, E-mail: qchen2012@sinano.ac.cn [Key Laboratory of Nanodevices and Applications-CAS and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institute, Hi-Tech Industrial Park South, Shenzhen 518057 (China)

    2014-04-14

    The incorporation of plasmonic nanostructures in the thin-film solar cells (TFSCs) is a promising route to harvest light into the nanoscale active layer. However, the light trapping scheme based on the plasmonic effects intrinsically presents narrow-band resonant enhancement of light absorption. Here we demonstrate that by cascading metal nanogratings with different sizes atop the TFSCs, broadband absorption enhancement can be realized by simultaneously exciting multiple localized surface plasmon resonances and inducing strong coupling between the plasmonic modes and photonic modes. As a proof of concept, we demonstrate of 66.5% in the photocurrent in an ultrathin amorphous silicon TFSC with two-dimensional cascaded gratings over the reference cell without gratings.

  16. Cascading metallic gratings for broadband absorption enhancement in ultrathin plasmonic solar cells

    International Nuclear Information System (INIS)

    Wen, Long; Sun, Fuhe; Chen, Qin

    2014-01-01

    The incorporation of plasmonic nanostructures in the thin-film solar cells (TFSCs) is a promising route to harvest light into the nanoscale active layer. However, the light trapping scheme based on the plasmonic effects intrinsically presents narrow-band resonant enhancement of light absorption. Here we demonstrate that by cascading metal nanogratings with different sizes atop the TFSCs, broadband absorption enhancement can be realized by simultaneously exciting multiple localized surface plasmon resonances and inducing strong coupling between the plasmonic modes and photonic modes. As a proof of concept, we demonstrate of 66.5% in the photocurrent in an ultrathin amorphous silicon TFSC with two-dimensional cascaded gratings over the reference cell without gratings

  17. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  18. Investigation of some transparent metal oxides as damp heat protective coating for CIGS solar cells

    Science.gov (United States)

    Pern, F. J.; Yan, F.; Zaunbrecher, K.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85°C and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5- μm Al-doped ZnO (AZO) layer and 0.2-μm bilayer InZnO were used as "inherent" part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-μm ZnSnO and atomic layer deposited (ALD) 0.1-μm Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative - all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micromorphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  19. Improved air stability of perovskite solar cells via solution-processed metal oxide transport layers

    Science.gov (United States)

    You, Jingbi; Meng, Lei; Song, Tze-Bin; Guo, Tzung-Fang; Yang, Yang (Michael); Chang, Wei-Hsuan; Hong, Ziruo; Chen, Huajun; Zhou, Huanping; Chen, Qi; Liu, Yongsheng; De Marco, Nicholas; Yang, Yang

    2016-01-01

    Lead halide perovskite solar cells have recently attracted tremendous attention because of their excellent photovoltaic efficiencies. However, the poor stability of both the perovskite material and the charge transport layers has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. Here, we report a solution-processed lead halide perovskite solar cell that has p-type NiOx and n-type ZnO nanoparticles as hole and electron transport layers, respectively, and shows improved stability against water and oxygen degradation when compared with devices with organic charge transport layers. Our cells have a p-i-n structure (glass/indium tin oxide/NiOx/perovskite/ZnO/Al), in which the ZnO layer isolates the perovskite and Al layers, thus preventing degradation. After 60 days storage in air at room temperature, our all-metal-oxide devices retain about 90% of their original efficiency, unlike control devices made with organic transport layers, which undergo a complete degradation after just 5 days. The initial power conversion efficiency of our devices is 14.6 ± 1.5%, with an uncertified maximum value of 16.1%.

  20. Solar cells

    International Nuclear Information System (INIS)

    1980-01-01

    A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

  1. Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    International Nuclear Information System (INIS)

    Ťapajna, M.; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J.; Brunner, F.; Cho, E.-M.; Hashizume, T.

    2014-01-01

    Oxide/semiconductor interface trap density (D it ) and net charge of Al 2 O 3 /(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D it distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D it (∼5–8 × 10 12  eV −1  cm −2 ) was found at trap energies ranging from E C -0.5 to 1 eV for structure with GaN cap compared to that (D it  ∼ 2–3 × 10 12  eV −1  cm −2 ) where the GaN cap was selectively etched away. D it distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D it (>10 13  eV −1  cm −2 ) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D it centered about E C -0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al 2 O 3 thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  2. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    Energy Technology Data Exchange (ETDEWEB)

    Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  3. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  4. Transition Metal Polypyridine Complexes: Studies of Mediation in Dye-Sensitized Solar Cells and Charge Separation

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, C. Michael [Colorado State Univ., Fort Collins, CO (United States). Dept. of Chemistry; Prieto, Amy L. [Colorado State Univ., Fort Collins, CO (United States). Dept. of Chemistry

    2017-02-08

    The Elliott group has long been supported by DOE for studies of cobalt(II/III) trisbypiridine (DTB) mediator complexes in dye sensitized solar cells. Previous work demonstrated that Co(II/III) chemistry is sensitive to the environment, showing unprecedented electrode-surface and electrolyte dependant voltammetry. In electrolytes that have large lipophilic cations, voltammetry of the [Co(DTB)3]2+/3+ couple is nearly Nernstian in appearance on nominally oxide-free metal surfaces. In contrast, on semiconductor electrodes in electrolytes with small, hard cations such as Li+, the electron transfer rates are so slow that it is difficult to measure any Faradaic current even at overpotentials of ±1 V. These studies are of direct relevance to the operation of cobalt-based mediators in solar cells. The research has also shown that these mediators are compatible with copper phenantroline based dyes, in contrast to I- due to the insolubility of CuI.

  5. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

    Science.gov (United States)

    Zade, Dariush; Kanda, Takashi; Yamashita, Koji; Kakushima, Kuniyuki; Nohira, Hiroshi; Ahmet, Parhat; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Hattori, Takeo; Iwai, Hiroshi

    2011-10-01

    We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3 µF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.

  6. The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Chang, A.C.K.; Ross, I.M.; Norris, D.J.; Cullis, A.G.; Tang, Y.T.; Cerrina, C.; Evans, A.G.R.

    2006-01-01

    In this study we have highlighted the effect of non-uniform channel layer growth by the direct correlation of the microstructure and electrical characteristics in state-of-the-art pseudomorphic Si/SiGe p-channel metal oxide semiconductor field effect transistor devices fabricated on Si. Two nominally identical sets of devices from adjacent locations of the same wafer were found to have radically different distributions in gate threshold voltages. Due to the close proximity and narrow gate length of the devices, focused ion beam milling was used to prepare a number of thin cross-sections from each of the two regions for subsequent analysis using transmission electron microscopy. It was found that devices from the region giving a very narrow range of gate threshold voltages exhibited a uniform microstructure in general agreement with the intended growth parameters. However, in the second region, which showed a large spread in the gate threshold voltages, profound anomalies in the microstructure were observed. These anomalies consisted of fluctuations in the quality and thickness of the SiGe strained layers. The non-uniform growth of the strained SiGe layer clearly accounted for the poorly controlled threshold voltages of these devices. The results emphasize the importance of good layer growth uniformity to ensure optimum device yield

  7. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Matys, M.; Kaneki, S.; Nishiguchi, K.; Adamowicz, B.; Hashizume, T.

    2017-12-01

    We proposed that the disorder induced gap states (DIGS) can be responsible for the threshold voltage (Vth) instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. In order to verify this hypothesis, we performed the theoretical calculations of the capacitance voltage (C-V) curves for the Al2O3/AlGaN/GaN structures using the DIGS model and compared them with measured ones. We found that the experimental C-V curves with a complex hysteresis behavior varied with the maximum forward bias and the sweeping rate can be well reproduced theoretically by assuming a particular distribution in energy and space of the DIGS continuum near the Al2O3/AlGaN interface, i.e., a U-shaped energy density distribution and exponential depth decay from the interface into Al2O3 layer (up to 4 nm), as well as suitable DIGS capture cross sections (the order of magnitude of 10-15 cm2). Finally, we showed that the DIGS model can also explain the negative bias induced threshold voltage instability. We believe that these results should be critical for the successful development of the passivation techniques, which allows to minimize the Vth instability related effects.

  8. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Science.gov (United States)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-09-01

    The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  9. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  10. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  11. InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator

    Science.gov (United States)

    Gucmann, F.; Gregušová, D.; Stoklas, R.; Dérer, J.; Kúdela, R.; Fröhlich, K.; Kordoš, P.

    2014-11-01

    Surface condition before an insulator deposition is the key issue for the preparation of reliable GaAs-based metal-oxide-semiconductor (MOS) devices. This study presents the preparation and properties of InGaAs/GaAs MOS structures with a double-layer insulator consisting of an oxygen-plasma oxide covered by Al2O3. The structures were oxidized during 75 s and 150 s. Static measurements yielded a saturation drain current of ˜250 mA/mm at VG = 1 V. Capacitance measurements showed improved performance in the depletion region compared with the structures without the double-layer insulator. Trapping effects were investigated by conductance vs. frequency measurements. The trap state density was in order of 1011 cm-2.eV-1 with a continuous decrease with increased trap energy. The carrier mobility evaluation showed peak values of 3950 cm2/V.s for 75 s and 4570 cm2/V.s for 150 s oxidation times with the sheet charge density ≅2 × 1012 cm-2. The results demonstrate great potential of the procedure that was used to prepare the GaAs-based MOS devices with oxidized GaAs surface covered with an Al2O3 insulator.

  12. Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Wang, Maojun [Institute of Microelectronics, Peking University, Beijing 100871 (China); Shen, Bo [School of Physics, Peking University, Beijing 100871 (China)

    2015-02-02

    We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.

  13. Illumination of Double Snapback Mechanism in High Voltage Operating Grounded Gate Extended Drain N-type Metal-Oxide-Semiconductor Field Effects Transistor Electro-Static Discharge Protection Devices

    Science.gov (United States)

    Kim, Kil Ho; Jung, Yong Icc; Shim, Jin Seop; So, Hyung Tae; Lee, Ji Hyun; Hwang, Lee Yeun; Park, Jin Won

    2004-10-01

    High current behaviors of the ‘grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor’ (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Both the transmission line pulse (TLP) data and the thermal incorporated 2-dimensional simulation analyses demonstrate a characteristic double snapback phenomenon after triggering of biploar junction transistor (BJT) operation. This implies the co-existence of two different on-states in high current region. The 2nd on-state, characterized by extremely low snapback holding voltage and low on-resistance, seems to be responsible for the vulnerability of the device under ESD stress. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Further studies reveal that the N-drift implant dose, among various process parameters, is a critical factor to determine the formation of deep electron channeling and consequential occurrence of the 2nd on-state. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

  14. Effects of metal electrode reflection and layer thicknesses on the performance of inverted organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Long, Yongbing [Department of Optical Electronics, School of Applied Physics and Material Engineering, WuYi University, Jiangmen 529020 (China)

    2010-05-15

    Optical simulations based on transfer matrix method (TMM) have been performed to investigate the performance of inverted organic solar cells (IOSCs). The upper limit to photocurrent generation (J{sub sc}{sup max}) has been calculated with the assumption that all photons absorbed by the active layer contribute to currents. The dependence of J{sub sc}{sup max} on metal electrode reflections and thicknesses of hole transport layer (HTL), and electron transport layer (ETL) is investigated. The investigations indicate that metal electrode reflections and thicknesses of HTL and ETL strongly affect the J{sub sc}{sup max} for IOSC devices with active layer of thickness below 60 nm, but these effects are weak for devices with active layer of thickness above 200 nm. Furthermore, the HTL inserted between the active layer and the metal electrode acts as an optical spacer and significantly improves J{sub sc}{sup max} in thin active layers (<60 nm). In particular, the improvement of J{sub sc}{sup max} is weaker in devices with an Ag electrode than those with an Al electrode. Finally, optimization of the power conversion efficiency is carried out by tailoring the layer thicknesses of HTL and ETL. (author)

  15. Metal octacarboxyphthalocyanine / multi-walled carbon nanotube hybrid for the development of dye solar cells

    CSIR Research Space (South Africa)

    Mphahlele, N

    2013-09-01

    Full Text Available : INTRODUCTION 1.1 GENERAL OVERVIEW 1 1.2 PROBLEM STATEMENT 2 1.3 OBJECTIVES 3 1.4 DISSERTATION LAYOUT 4 2 CHAPTER TWO: LITERATURE SURVEY 2.1 PHOTOVOLTAICS 5 2.1.1 Introduction 5 2.1.2 Solid-State Solar Cell 5 2.1.3 Basic Operation Of A Traditional... for Sensitisers 12 2.3.4 Types of Photosensitisers 13 2.3.5 Ruthenium Complexes 13 2.3.5.1 Mechanism: Light Absorption Via Ligand-To-Metal Charge transfer (LMCT) Excitation 14 2.3.5.2 Organic Dyes 15 2.3.6 Platinum Electrode 16 2.3.7 Electrolytes 16 2...

  16. Silver Nanowire Top Electrodes in Flexible Perovskite Solar Cells using Titanium Metal as Substrate.

    Science.gov (United States)

    Lee, Minoh; Ko, Yohan; Min, Byoung Koun; Jun, Yongseok

    2016-01-08

    Flexible perovskite solar cells (FPSCs) have various applications such as wearable electronic textiles and portable devices. In this work, we demonstrate FPSCs on a titanium metal substrate employing solution-processed silver nanowires (Ag NWs) as the top electrode. The Ag NW electrodes were deposited on top of the spiro-MeOTAD hole transport layer by a carefully controlled spray-coating method at moderate temperatures. The power conversion efficiency (PCE) reached 7.45 % under AM 1.5 100 mW cm(-2) illumination. Moreover, the efficiency for titanium-based FPSCs decreased only slightly (by 2.6 % of the initial value) after the devices were bent 100 times. With this and other advances, fully solution-based indium-free flexible photovoltaics, advantageous in terms of price and processing, have the potential to be scaled into commercial production. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Silver-free Metallization Technology for Producing High Efficiency, Industrial Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Michaelson, Lynne M [Technic Inc; Munoz, Krystal [Technic Inc.; Karas, Joseph [Arizona State Univ., Tempe, AZ (United States); Bowden, Stuart [Arizona State Univ., Tempe, AZ (United States); Rand, James A; Gallegos, Anthony [Technic Inc.; Tyson, Tom [Technic Inc.; Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2018-03-30

    The goal of this project is to provide a commercially viable Ag-free metallization technology that will both reduce cost and increase efficiency of standard silicon solar cells. By removing silver from the front grid metallization and replacing it with lower cost nickel, copper, and tin metal, the front grid direct materials costs will decrease. This reduction in material costs should provide a path to meeting the Sunshot 2020 goal of $1 / WDC. As of today, plated contacts are not widely implemented in large scale manufacturing. For organizations that wish to implement pilot scale manufacturing, only two equipment choices exist. These equipment manufacturers do not supply plating chemistry. The main goal of this project is to provide a chemistry and equipment solution to the industry that enables reliable manufacturing of plated contacts marked by passing reliability results and higher efficiencies than silver paste front grid contacts. To date, there have been several key findings that point to plated contacts performing equal to or better than the current state of the art silver paste contacts. Poor adhesion and reliability concerns are a few of the hurdles for plated contacts, specifically plated nickel directly on silicon. A key finding of the Phase 1 budget period is that the plated contacts have the same adhesion as the silver paste controls. This is a huge win for plated contacts. With very little optimization work, state of the art electrical results for plated contacts on laser ablated lines have been demonstrated with efficiencies up to 19.1% and fill factors ~80% on grid lines 40-50 um wide. The silver paste controls with similar line widths demonstrate similar electrical results. By optimizing the emitter and grid design for the plated contacts, it is expected that the electrical performance will exceed the silver paste controls. In addition, cells plated using Technic chemistry and equipment pass reliability testing; i.e. 1000 hours damp heat and 200

  18. Power management circuits for self-powered systems based on micro-scale solar energy harvesting

    Science.gov (United States)

    Yoon, Eun-Jung; Yu, Chong-Gun

    2016-03-01

    In this paper, two types of power management circuits for self-powered systems based on micro-scale solar energy harvesting are proposed. First, if a solar cell outputs a very low voltage, less than 0.5 V, as in miniature solar cells or monolithic integrated solar cells, such that it cannot directly power the load, a voltage booster is employed to step up the solar cell's output voltage, and then a power management unit (PMU) delivers the boosted voltage to the load. Second, if the output voltage of a solar cell is enough to drive the load, the PMU directly supplies the load with solar energy. The proposed power management systems are designed and fabricated in a 0.18-μm complementary metal-oxide-semiconductor process, and their performances are compared and analysed through measurements.

  19. Metal Nanoparticles and Carbon-Based Nanostructures as Advanced Materials for Cathode Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Pietro Calandra

    2010-01-01

    Full Text Available We review the most advanced methods for the fabrication of cathodes for dye-sensitized solar cells employing nanostructured materials. The attention is focused on metal nanoparticles and nanostructured carbon, among which nanotubes and graphene, whose good catalytic properties make them ideal for the development of counter electrode substrates, transparent conducting oxide, and advanced catalyst materials.

  20. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    Science.gov (United States)

    Szyszka, A.; Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P.; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-01

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y2O3 films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  1. The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

    Science.gov (United States)

    Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

    2017-08-01

    Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

  2. Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Musztyfaga-Staszuk M.

    2015-09-01

    Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

  3. Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenyong [Univ. of Wyoming, Laramie, WY (United States); Tang, Jinke [Univ. of Wyoming, Laramie, WY (United States); Dahnovsky, Yuri [Univ. of Wyoming, Laramie, WY (United States); Pikal, Jon M [Univ. of Wyoming, Laramie, WY (United States); Chien, TeYu [Univ. of Wyoming, Laramie, WY (United States)

    2017-11-03

    In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation

  4. Metal-electrode-free Window-like Organic Solar Cells with p-Doped Carbon Nanotube Thin-film Electrodes

    Science.gov (United States)

    Jeon, Il; Delacou, Clement; Kaskela, Antti; Kauppinen, Esko I.; Maruyama, Shigeo; Matsuo, Yutaka

    2016-08-01

    Organic solar cells are flexible and inexpensive, and expected to have a wide range of applications. Many transparent organic solar cells have been reported and their success hinges on full transparency and high power conversion efficiency. Recently, carbon nanotubes and graphene, which meet these criteria, have been used in transparent conductive electrodes. However, their use in top electrodes has been limited by mechanical difficulties in fabrication and doping. Here, expensive metal top electrodes were replaced with high-performance, easy-to-transfer, aerosol-synthesized carbon nanotubes to produce transparent organic solar cells. The carbon nanotubes were p-doped by two new methods: HNO3 doping via ‘sandwich transfer’, and MoOx thermal doping via ‘bridge transfer’. Although both of the doping methods improved the performance of the carbon nanotubes and the photovoltaic performance of devices, sandwich transfer, which gave a 4.1% power conversion efficiency, was slightly more effective than bridge transfer, which produced a power conversion efficiency of 3.4%. Applying a thinner carbon nanotube film with 90% transparency decreased the efficiency to 3.7%, which was still high. Overall, the transparent solar cells had an efficiency of around 50% that of non-transparent metal-based solar cells (7.8%).

  5. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Theuring Martin

    2014-07-01

    Full Text Available In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  6. The origin of enhanced optical absorption in solar cells with metal nanoparticles embedded in the active layer

    KAUST Repository

    Lee, Jung-Yong

    2010-04-29

    We analyze the enhancement in optical absorption of an absorbing medium when spherical metal nanoparticles are embedded in it. Our analysis uses generalized Mie theory to calculate the absorbed optical power as a function of the distance from the metal nanoparticle. This analysis is used to evaluate the potential of enhancing optical absorption in thin-film solar cells by embedding spherical metal nanoparticles. We consider the trade-off between maximizing overall optical absorption and ensuring that a large fraction of the incident optical power is dissipated in the absorbing host medium rather than in the metal nanoparticle. We show that enhanced optical absorption results from strong scattering by the metal nanoparticle which locally enhances the optical electric fields. We also discuss the effect of a thin dielectric encapsulation of the metal nanoparticles. ©2010 Optical Society of America.

  7. High Efficiency Solar Cell on Low Cost Metal Foil Substrate, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Future space missions will require Solar cell arrays having specific power ratings in excess of 1000 W/kg. Conventional crystalline photovoltaic technology comprised...

  8. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Science.gov (United States)

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  9. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  10. Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

    Science.gov (United States)

    Chang, C.-Y.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.; Takenaka, M.; Takagi, S.

    2015-08-01

    We examine the electrical properties of atomic layer deposition (ALD) La2O3/InGaAs and Al2O3/La2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La2O3/InGaAs interface provides low interface state density (Dit) with the minimum value of ˜3 × 1011 cm-2 eV-1, which is attributable to the excellent La2O3 passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La2O3. In order to simultaneously satisfy low Dit and small hysteresis, the effectiveness of Al2O3/La2O3/InGaAs gate stacks with ultrathin La2O3 interfacial layers is in addition evaluated. The reduction of the La2O3 thickness to 0.4 nm in Al2O3/La2O3/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, Dit of the Al2O3/La2O3/InGaAs interfaces becomes higher than that of the La2O3/InGaAs ones, attributable to the diffusion of Al2O3 through La2O3 into InGaAs and resulting modification of the La2O3/InGaAs interface structure. As a result of the effective passivation effect of La2O3 on InGaAs, however, the Al2O3/10 cycle (0.4 nm) La2O3/InGaAs gate stacks can realize still lower Dit with maintaining small hysteresis and low leakage current than the conventional Al2O3/InGaAs MOS interfaces.

  11. Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules

    Energy Technology Data Exchange (ETDEWEB)

    Carmody, Michael John [Intrinsiq Materials Inc., Rochester, NY (United States)

    2017-10-11

    There has long been a desire to replace the front-side silver contacts in silicon solar cells. There are two driving forces to do this. First, silver is an expensive precious metal. Secondly, the process to use silver requires that it be formulated into screen print pastes that need a lead-containing glass frit, and the use of lead is forbidden in many parts of the world. Because of the difficulty in replacing these pastes and the attendant processes, lead exemptions have granted to solar cells. Copper has been the replacement metal of choice because it is significantly cheaper than silver and is very close to silver in electrical conductivity. Using processes which do not use lead, obviates it as an environmental contaminant. However, copper cannot be in contact with the silicon of the cell since it migrates through the silicon and causes defects which severely damage the efficiency of the cell. Hence, a conductive barrier must be placed between the copper and silicon and nickel, and especially nickel silicide, have been shown to be materials of choice. However, nickel must be sputtered and annealed to create the nickel silicide barrier, and copper has either been sputtered or plated. All of these processes require expensive, specialized equipment and plating uses environmentally unfriendly chemicals. Therefore, Intrinsiq proposed using printed nano nickel silicide ink (which we had previously invented) and printed nano copper ink to create these electrodes and barriers. We found that nano copper ink could be readily printed and sintered under a reducing atmosphere to give highly conductive grids. We further showed that nano nickel silicide ink could be readily jetted into grids on top of the silicon cell. It could then be annealed to create a barrier. However, it was found that the combination of printed NiSi and printed Cu did not give contact resistivity good enough to produce efficient cells. Only plated copper on top of the printed NiSi gave useful contact

  12. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Girish [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India); Department of Chemistry, School of Engineering and Technology, CMR University, Bengaluru, 562149, Karnataka (India); Rao, K.S.R. Koteswara, E-mail: raoksrk@gmail.com [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India)

    2017-01-01

    Graphical abstract: Semiconductor metal oxides: Modifications, charge carrier dynamics and photocatalysis. - Highlights: • TiO{sub 2}, WO{sub 3} and ZnO based photocatalysis is reviewed. • Advances to improve the efficiency are emphasized. • Differences and similarities in the modifications are highlighted. • Charge carrier dynamics for each strategy are discussed. - Abstract: Metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO{sub 2}, WO{sub 3} & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO{sub 2} and WO{sub 3} in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal

  13. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won; Rondinone, Adam Justin; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2017-09-19

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  14. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2014-06-24

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  15. Effect of metal ion Fe(III on the performance of chlorophyll as photosensitizers on dye sensitized solar cell

    Directory of Open Access Journals (Sweden)

    Harsasi Setyawati

    Full Text Available The energy crisis is a major problem facing the world today and will need a renewable energy source that is environmentally friendly; one of these is the dye sensitized solar cell (DSSC. DSSC is photochemical electric cell that can convert solar energy into electrical energy. This research aims to study the characteristics of chlorophyll compounds with the addition of metal ions Fe(III and to determine the effect of Fe(III on the performance of chlorophyll as a photosensitizer in the DSSC. The formation of complex compounds of Fe(III-chlorophyll is shown by the phenomenon of metal ligand charge transfer (MLCT at a wavelength of 263.00 nm and absorption transition d-d at 745.00 nm. Fourier transform infrared characterization of the binding of Fe-O complex compounds appears at 486.06 cm−1. The complex compound of Fe(III-chlorophyll has a magnetic moment value of 9.62 Bohr Magneton (BM. The existence of ion Fe(III in chlorophyll can improve the performance of chlorophyll as a dye sensitizer with a maximum current of 4.00 mA/cm2, maximum voltage of 0.18 volts and efficiency values of 1.35%. Keywords: Fe(III-chlorophyll, Dye sensitized solar cell, Metal ligand charge transfer, Photosensitizer

  16. Metal oxide semiconductors for dye degradation

    Energy Technology Data Exchange (ETDEWEB)

    Adhikari, Sangeeta; Sarkar, Debasish, E-mail: dsarkar@nitrkl.ac.in

    2015-12-15

    Highlights: • Hydrothermal synthesis of monoclinic and hexagonal WO{sub 3} nanostructures. • Nanocuboid and nanofiber growth using different structure directing agents. • WO{sub 3}–ZnO nanocomposites for dye degradation under UV and visible light. • High photocatalytic efficiency is achieved by 10 wt% monoclinic WO{sub 3}. • WO{sub 3} assists to trap hole in UV and arrests electron in visible light irradiation. - Abstract: Organic contaminants are a growing threat to the environment that widely demands their degradation by high efficient photocatalysts. Thus, the proposed research work primely focuses on the efficient degradation of methyl orange using designed WO{sub 3}–ZnO photocatalysts under both UV and visible light irradiation. Two different sets of WO{sub 3} nanostructures namely, monoclinic WO{sub 3} (m-WO{sub 3}) and hexagonal WO{sub 3} (h-WO{sub 3}) synthesizes in presence of a different structure directing agents. A specific dispersion technique allows the intimate contact of as-synthesized WO{sub 3} and ultra-violet active commercial ZnO photocatalyst in different weight variations. ZnO nanocrystal in presence of an optimum 10 wt% m-WO{sub 3} shows a high degree of photocatalytic activity under both UV and visible light irradiation compared to counterpart h-WO{sub 3}. Symmetrical monoclinic WO{sub 3} assists to trap hole in UV, but electron arresting mechanism predominates in visible irradiation. Coupling of monoclinic nanocuboid WO{sub 3} with ZnO proves to be a promising photocatalyst in both wavelengths.

  17. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Energy Technology Data Exchange (ETDEWEB)

    Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

    2014-12-30

    Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

  18. Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Mehul C. Raval

    2013-01-01

    Full Text Available Given the high percentage of metal cost in cell processing and concerns due to increasing Ag prices, alternative metallization schemes are being considered. Ni-Cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs. A brief overview of various front side patterning techniques is presented. Subsequently, working principle of various plating techniques is discussed. For electroless plated Ni seed layer, fill factor values nearing 80% and efficiencies close to 17.5% have been demonstrated, while for Light Induced Plating deposited layers, an efficiency of 19.2% has been reported. Various methods for qualifying adhesion and long term stability of metal stack are discussed. Adhesion strengths in the range of 1–2.7 N/mm have been obtained for Ni-Cu contacts tabbed with conventional soldering process. Given the significance of metallization properties, different methods for characterization are outlined. The problem of background plating for Ni-Cu based metallization along with the various methods for characterization is summarized. An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers. Recent successful commercialization and demonstration of Ni-Cu based metallization on industrial scale indicate a potential major role of Ni-Cu based contacts in near future.

  19. Molecular and Nanoscale Engineering of High Efficiency Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Jenekhe, Samson A. [Univ. of Washington, Seattle, WA (United States); Ginger, David S. [Univ. of Washington, Seattle, WA (United States); Cao, Guozhong [Univ. of Washington, Seattle, WA (United States)

    2016-01-15

    We combined the synthesis of new polymers and organic-inorganic hybrid materials with new experimental characterization tools to investigate bulk heterojunction (BHJ) polymer solar cells and hybrid organic-inorganic solar cells during the 2007-2010 period (phase I) of this project. We showed that the bulk morphology of polymer/fullerene blend solar cells could be controlled by using either self-assembled polymer semiconductor nanowires or diblock poly(3-alkylthiophenes) as the light-absorbing and hole transport component. We developed new characterization tools in-house, including photoinduced absorption (PIA) spectroscopy, time-resolved electrostatic force microscopy (TR-EFM) and conductive and photoconductive atomic force microscopy (c-AFM and pc-AFM), and used them to investigate charge transfer and recombination dynamics in polymer/fullerene BHJ solar cells, hybrid polymer-nanocrystal (PbSe) devices, and dye-sensitized solar cells (DSSCs); we thus showed in detail how the bulk photovoltaic properties are connected to the nanoscale structure of the BHJ polymer solar cells. We created various oxide semiconductor (ZnO, TiO2) nanostructures by solution processing routes, including hierarchical aggregates and nanorods/nanotubes, and showed that the nanostructured photoanodes resulted in substantially enhanced light-harvesting and charge transport, leading to enhanced power conversion efficiency of dye-sensitized solar cells.

  20. Giant photocurrent enhancement by transition metal doping in quantum dot sensitized solar cells

    Science.gov (United States)

    Rimal, Gaurab; Pimachev, Artem K.; Yost, Andrew J.; Poudyal, Uma; Maloney, Scott; Wang, Wenyong; Chien, TeYu; Dahnovsky, Yuri; Tang, Jinke

    2016-09-01

    A huge enhancement in the incident photon-to-current efficiency of PbS quantum dot (QD) sensitized solar cells by manganese doping is observed. In the presence of Mn dopants with relatively small concentration (4 at. %), the photoelectric current increases by an average of 300% (up to 700%). This effect cannot be explained by the light absorption mechanism because both the experimental and theoretical absorption spectra demonstrate several times decreases in the absorption coefficient. To explain such dramatic increase in the photocurrent we propose the electron tunneling mechanism from the LUMO of the QD excited state to the Zn2SnO4 (ZTO) semiconductor photoanode. This change is due to the presence of the Mn instead of Pb atom at the QD/ZTO interface. The ab initio calculations confirm this mechanism. This work proposes an alternative route for a significant improvement of the efficiency for quantum dot sensitized solar cells.

  1. Giant photocurrent enhancement by transition metal doping in quantum dot sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rimal, Gaurab; Pimachev, Artem K.; Yost, Andrew J.; Poudyal, Uma; Maloney, Scott; Wang, Wenyong; Chien, TeYu; Dahnovsky, Yuri, E-mail: yurid@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: yurid@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States)

    2016-09-05

    A huge enhancement in the incident photon-to-current efficiency of PbS quantum dot (QD) sensitized solar cells by manganese doping is observed. In the presence of Mn dopants with relatively small concentration (4 at. %), the photoelectric current increases by an average of 300% (up to 700%). This effect cannot be explained by the light absorption mechanism because both the experimental and theoretical absorption spectra demonstrate several times decreases in the absorption coefficient. To explain such dramatic increase in the photocurrent we propose the electron tunneling mechanism from the LUMO of the QD excited state to the Zn{sub 2}SnO{sub 4} (ZTO) semiconductor photoanode. This change is due to the presence of the Mn instead of Pb atom at the QD/ZTO interface. The ab initio calculations confirm this mechanism. This work proposes an alternative route for a significant improvement of the efficiency for quantum dot sensitized solar cells.

  2. Multidimensional Anodized Titanium Foam Photoelectrode for Efficient Utilization of Photons in Mesoscopic Solar Cells.

    Science.gov (United States)

    Kang, Jin Soo; Choi, Hyelim; Kim, Jin; Park, Hyeji; Kim, Jae-Yup; Choi, Jung-Woo; Yu, Seung-Ho; Lee, Kyung Jae; Kang, Yun Sik; Park, Sun Ha; Cho, Yong-Hun; Yum, Jun-Ho; Dunand, David C; Choe, Heeman; Sung, Yung-Eun

    2017-09-01

    Mesoscopic solar cells based on nanostructured oxide semiconductors are considered as a promising candidates to replace conventional photovoltaics employing costly materials. However, their overall performances are below the sufficient level required for practical usages. Herein, this study proposes an anodized Ti foam (ATF) with multidimensional and hierarchical architecture as a highly efficient photoelectrode for the generation of a large photocurrent. ATF photoelectrodes prepared by electrochemical anodization of freeze-cast Ti foams have three favorable characteristics: (i) large surface area for enhanced light harvesting, (ii) 1D semiconductor structure for facilitated charge collection, and (iii) 3D highly conductive metallic current collector that enables exclusion of transparent conducting oxide substrate. Based on these advantages, when ATF is utilized in dye-sensitized solar cells, short-circuit photocurrent density up to 22.0 mA cm -2 is achieved in the conventional N719 dye-I 3 - /I - redox electrolyte system even with an intrinsically inferior quasi-solid electrolyte. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. High-Performance Black Multicrystalline Silicon Solar Cells by a Highly Simplified Metal-Catalyzed Chemical Etching Method

    KAUST Repository

    Ying, Zhiqin

    2016-05-20

    A wet-chemical surface texturing technique, including a two-step metal-catalyzed chemical etching (MCCE) and an extra alkaline treatment, has been proven as an efficient way to fabricate high-efficiency black multicrystalline (mc) silicon solar cells, whereas it is limited by the production capacity and the cost cutting due to the complicated process. Here, we demonstrated that with careful control of the composition in etching solution, low-aspect-ratio bowl-like nanostructures with atomically smooth surfaces could be directly achieved by improved one-step MCCE and with no posttreatment, like alkali solution. The doublet surface texture of implementing this nanobowl structure upon the industrialized acidic-textured surface showed concurrent improvement in optical and electrical properties for realizing 18.23% efficiency mc-Si solar cells (156 mm × 156 mm), which is sufficiently higher than 17.7% of the solely acidic-textured cells in the same batch. The one-step MCCE method demonstrated in this study may provide a cost-effective way to manufacture high-performance mc-Si solar cells for the present photovoltaic industry. © 2016 IEEE.

  4. Comparison of Fast Roll-to-Roll Flexographic, Inkjet, Flatbed, and Rotary Screen Printing of Metal Back Electrodes for Polymer Solar Cells

    DEFF Research Database (Denmark)

    Hösel, Markus; Søndergaard, Roar R.; Angmo, Dechan

    2013-01-01

    The majority of polymer solar cells reported today employs processing under high vacuum for one or more of the layers in the solar cell stack. Most notably the highly conducting metal back electrode is almost exclusively applied by evaporation of the pure metal. While it is not impossible...... to envisage mass production of polymer solar cells using vacuum processing it does present some drawbacks in terms of both processing speed, capital investment in processing equipment technical yield and direct process energy. From this point of view it is clear that vacuum processed electrodes should...... be avoided and electrodes should be printable using methods that provide a high degree of accuracy and high technical yield. When considering large area polymer solar cells (i.e., not laboratory devices) a few reports have employed printable back electrodes mostly by use of silver formulations[1–4] but also...

  5. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  6. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  7. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Science.gov (United States)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  8. Gravure-Offset Printed Metallization of Multi-Crystalline Silicon Solar Cells with Low Metal-Line Width for Mass Production.

    Science.gov (United States)

    Lee, Jonghwan; Jeong, Chaehwan

    2016-05-01

    The gravure offset method has been developed toward an industrially viable printing technique for electronic circuitry. In this paper, a roller type gravure offset manufacturing process was developed to fabricate fine line for using front electrode for solar cells. In order to obtain the optimum metallization printing lines, thickness of 20 μm which is narrow line is required. The main targets are the reduction of metallized area to reduce the shading loss, and a high conductivity to transport the current as loss free as possible out of the cell. However, it is well known that there is a poor contact resistance between the front Ag electrode and the n(+) emitter. Nickel plating was conducted to prevent the increase of contact resistance and the increase of fill factor (FF). The performance of n-Si/Ag (seed layer)/Ni solar cells were observed in 609 mV of open circuit voltage, 35.54 mA/cm2 of short circuit current density, 75.75% of fill factor, and 16.04% of conversion efficiency.

  9. Tin oxide as a photoanode for dye-sensitised solar cells: Current progress and future challenges

    Science.gov (United States)

    Wali, Qamar; Fakharuddin, Azhar; Jose, Rajan

    2015-10-01

    Tin oxide (SnO2) is a candidate for applications requiring high electrical conductivity and optical transparency, such as a photoanode in dye-sensitised solar cells (DSSCs), due to its higher electron mobility and wider optical transparency than many other metal oxide semiconductors (MOS), such as TiO2 and ZnO. However, DSSCs employing SnO2 show significantly lower photoconversion efficiency, compared to that achieved by popular choices, such as TiO2, due to its intrinsic limitations such as lower conduction band energy and isoelectric point. A survey of literature shows a revived interest in SnO2-based DSSCs, for example, strategies to (i) increase the dye uptake, (ii) increase its Fermi energy level, and (iii) reduce the recombination, such as by increasing surface roughness and novel morphologies towards (i), and doping of transition metals for (ii) and (iii). In response to these improvements, SnO2-based DSSCs showed similar open circuit voltage and superior short circuit current to that achieved by TiO2. We have undertaken a critical review on the progress made in overcoming the limitations and capitalising the advantages of SnO2 to fabricate more efficient DSSCs. We identify that more investment is required to reduce the recombination in SnO2 for it to emerge as an efficiency record holder in DSSCs.

  10. Theoretical modelling of intermediate band solar cell materials based on metal-doped chalcopyrite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, P. [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain)]. E-mail: pablop@etsit.upm.es; Sanchez, K. [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain); Conesa, J.C. [Instituto de Catalisis y Petroleoquimica, CSIC, Marie Curie 2, Cantoblanco, 28049 Madrid (Spain); Fernandez, J.J. [Dpt. de Fisica Fundamental, Universidad Nacional de Educacion a Distancia, 28080, Madrid (Spain); Wahnon, P. [Instituto de Energia Solar and Dpt. de Tecnologias Especiales, ETSI de Telecomunicacion, UPM, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2007-05-31

    Electronic structure calculations are carried out for CuGaS{sub 2} partially substituted with Ti, V, Cr or Mn to ascertain if some of these systems could provide an intermediate band material able to give a high efficiency photovoltaic cell. Trends in electronic level positions are analyzed and more accurate advanced theory levels (exact exchange or Hubbard-type methods) are used in some cases. The Ti-substituted system seems more likely to yield an intermediate band material with the desired properties, and furthermore seems realizable from the thermodynamic point of view, while those with Cr and Mn might give half-metal structures with applications in spintronics.

  11. Nanostructured Organic Solar Cells

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

    Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

  12. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy

    Directory of Open Access Journals (Sweden)

    Woobin Lee

    2015-12-01

    Full Text Available We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption (A′ vs. wavelength (λ plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  13. Colloidal metal oxide nanocrystals as charge transporting layers for solution-processed light-emitting diodes and solar cells.

    Science.gov (United States)

    Liang, Xiaoyong; Bai, Sai; Wang, Xin; Dai, Xingliang; Gao, Feng; Sun, Baoquan; Ning, Zhijun; Ye, Zhizhen; Jin, Yizheng

    2017-03-21

    Colloidal metal oxide nanocrystals offer a unique combination of excellent low-temperature solution processability, rich and tuneable optoelectronic properties and intrinsic stability, which makes them an ideal class of materials as charge transporting layers in solution-processed light-emitting diodes and solar cells. Developing new material chemistry and custom-tailoring processing and properties of charge transporting layers based on oxide nanocrystals hold the key to boosting the efficiency and lifetime of all-solution-processed light-emitting diodes and solar cells, and thereby realizing an unprecedented generation of high-performance, low-cost, large-area and flexible optoelectronic devices. This review aims to bridge two research fields, chemistry of colloidal oxide nanocrystals and interfacial engineering of optoelectronic devices, focusing on the relationship between chemistry of colloidal oxide nanocrystals, processing and properties of charge transporting layers and device performance. Synthetic chemistry of colloidal oxide nanocrystals, ligand chemistry that may be applied to colloidal oxide nanocrystals and chemistry associated with post-deposition treatments are discussed to highlight the ability of optimizing processing and optoelectronic properties of charge transporting layers. Selected examples of solution-processed solar cells and light-emitting diodes with oxide-nanocrystal charge transporting layers are examined. The emphasis is placed on the correlation between the properties of oxide-nanocrystal charge transporting layers and device performance. Finally, three major challenges that need to be addressed in the future are outlined. We anticipate that this review will spur new material design and simulate new chemistry for colloidal oxide nanocrystals, leading to charge transporting layers and solution-processed optoelectronic devices beyond the state-of-the-art.

  14. Insights into charge carrier dynamics in organo-metal halide perovskites: from neat films to solar cells.

    Science.gov (United States)

    Peng, Jiajun; Chen, Yani; Zheng, Kaibo; Pullerits, Tõnu; Liang, Ziqi

    2017-10-02

    Organo-metal halide perovskites have recently obtained world-wide attention as promising solar cell materials. They have broad and strong light absorption along with excellent carrier transport properties which partially explain their record power conversion efficiencies above 22%. However, the basic understanding of the underlying physical mechanisms is still limited and there remain large discrepancies among reported transport characteristics of perovskite materials. Notably, the carrier mobility of perovskite samples either in thin films or within solar cells obtained using different techniques can vary by up to 7-8 orders of magnitude. This tutorial review aims to offer insights into the scope, advantages, limitations and latest developments of the techniques that have been applied for studying charge carrier dynamics in perovskites. We summarize a comprehensive set of measurements including (1) time-resolved laser spectroscopies (transient absorption, time-resolved photoluminescence, terahertz spectroscopy and microwave conductivity); (2) electrical transient techniques (charge extraction by linearly increasing voltage and time-of-flight); and (3) steady-state methods (field-effect transistor, Hall effect and space charge limited current). Firstly, the basics of the above measurements are described. We then comparatively summarize the charge carrier characteristics of perovskite-based neat films, bilayer films and solar cells. Finally, we compare the different approaches in evaluating the key parameters of transport dynamics and unravel the reasons for the large discrepancies among these methods. We anticipate that this tutorial review will serve as the entry point for understanding the experimental results from the above techniques and provide insights into charge carrier dynamics in perovskite materials and devices.

  15. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    International Nuclear Information System (INIS)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickel—chromium alloy (NiCr), and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p—i—n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%

  16. Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

    Science.gov (United States)

    Heo, Jungwoo; Kim, Gi-Hwan; Jeong, Jaeki; Yoon, Yung Jin; Seo, Jung Hwa; Walker, Bright; Kim, Jin Young

    2016-11-01

    We report the preparation of Cu2S, In2S3, CuInS2 and Cu(In,Ga)S2 semiconducting films via the spin coating and annealing of soluble tertiary-alkyl thiolate complexes. The thiolate compounds are readily prepared via the reaction of metal bases and tertiary-alkyl thiols. The thiolate complexes are soluble in common organic solvents and can be solution processed by spin coating to yield thin films. Upon thermal annealing in the range of 200-400 °C, the tertiary-alkyl thiolates decompose cleanly to yield volatile dialkyl sulfides and metal sulfide films which are free of organic residue. Analysis of the reaction byproducts strongly suggests that the decomposition proceeds via an SN1 mechanism. The composition of the films can be controlled by adjusting the amount of each metal thiolate used in the precursor solution yielding bandgaps in the range of 1.2 to 3.3 eV. The films form functioning p-n junctions when deposited in contact with CdS films prepared by the same method. Functioning solar cells are observed when such p-n junctions are prepared on transparent conducting substrates and finished by depositing electrodes with appropriate work functions. This method enables the fabrication of metal chalcogenide films on a large scale via a simple and chemically clear process.

  17. Flexible high power-per-weight perovskite solar cells with chromium oxide-metal contacts for improved stability in air.

    Science.gov (United States)

    Kaltenbrunner, Martin; Adam, Getachew; Głowacki, Eric Daniel; Drack, Michael; Schwödiauer, Reinhard; Leonat, Lucia; Apaydin, Dogukan Hazar; Groiss, Heiko; Scharber, Markus Clark; White, Matthew Schuette; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2015-10-01

    Photovoltaic technology requires light-absorbing materials that are highly efficient, lightweight, low cost and stable during operation. Organolead halide perovskites constitute a highly promising class of materials, but suffer limited stability under ambient conditions without heavy and costly encapsulation. Here, we report ultrathin (3 μm), highly flexible perovskite solar cells with stabilized 12% efficiency and a power-per-weight as high as 23 W g(-1). To facilitate air-stable operation, we introduce a chromium oxide-chromium interlayer that effectively protects the metal top contacts from reactions with the perovskite. The use of a transparent polymer electrode treated with dimethylsulphoxide as the bottom layer allows the deposition-from solution at low temperature-of pinhole-free perovskite films at high yield on arbitrary substrates, including thin plastic foils. These ultra-lightweight solar cells are successfully used to power aviation models. Potential future applications include unmanned aerial vehicles-from airplanes to quadcopters and weather balloons-for environmental and industrial monitoring, rescue and emergency response, and tactical security applications.

  18. Highly Efficient and Stable Flexible Perovskite Solar Cells with Metal Oxides Nanoparticle Charge Extraction Layers.

    Science.gov (United States)

    Najafi, Mehrdad; Di Giacomo, Francesco; Zhang, Dong; Shanmugam, Santhosh; Senes, Alessia; Verhees, Wiljan; Hadipour, Afshin; Galagan, Yulia; Aernouts, Tom; Veenstra, Sjoerd; Andriessen, Ronn

    2018-02-09

    In this study, the fabrication of highly efficient and durable flexible inverted perovskite solar cells (PSCs) is reported. Presynthesized, solution-derived NiO x and ZnO nanoparticles films are employed at room temperature as a hole transport layer (HTL) and electron transport layer (ETL), respectively. The triple cation perovskite films are produced in a single step and for the sake of comparison, ultrasmooth and pinhole-free absorbing layers are also fabricated using MAPbI 3 perovskite. The triple cation perovskite cells exhibit champion power conversion efficiencies (PCEs) of 18.6% with high stabilized power conversion efficiency of 17.7% on rigid glass/indium tin oxide (ITO) substrates (comparing with 16.6% PCE with 16.1% stabilized output efficiency for the flexible polyethylene naphthalate (PEN)/thin film barrier/ITO substrates). More interestingly, the durability of flexible PSC under simulation of operative condition is proved. Over 85% of the maximum stabilized output efficiency is retained after 1000 h aging employing a thin MAPbI 3 perovskite (over 90% after 500 h with a thick triple cation perovskite). This result is comparable to a similar state of the art rigid PSC and represents a breakthrough in the stability of flexible PSC using ETLs and HTLs compatible with roll to roll production speed, thanks to their room temperature processing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Metal-Free Counter Electrode for Efficient Dye-Sensitized Solar Cells through High Surface Area and Large Porous Carbon

    Directory of Open Access Journals (Sweden)

    Pavuluri Srinivasu

    2011-01-01

    Full Text Available Highly efficient, large mesoporous carbon is fabricated as a metal-free counter electrode for dye-sensitized solar cells. The mesoporous carbon shows very high energy conversion efficiency of 7.1% compared with activated carbon. The mesoporous carbon is prepared and characterized by nitrogen adsorption, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. The nitrogen adsorption data reveals that the material possesses BET specific surface area ca.1300 m2/g and pore diameter 4.4 nm. Hexagonal rod-like morphology and ordered pore structure of mesoporous carbon are confirmed by electron microscopy data. The better performance of this carbon material is greatly benefited from its ordered interconnected mesoporous structure and high surface area.

  20. Solar cell concentrating system

    International Nuclear Information System (INIS)

    Garg, H.P.; Sharma, V.K.; Agarwal, R.K.

    1986-11-01

    This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

  1. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    This work focuses on the in-line high-rate evaporation of aluminum for contacting rear sides of silicon solar cells. The substrate temperature during the deposition process, the wafer bow after deposition, and the electrical properties of evaporated contacts are investigated. Furthermore, this work demonstrates for the first time the formation of aluminum-doped silicon regions by the in-line high-rate evaporation of aluminum without any further temperature treatment. The temperature of silicon wafers during in-line high-rate evaporation of aluminum is investigated in this work. The temperatures are found to depend on the wafer thickness W, the aluminum layer thickness d, and on the wafer emissivity {epsilon}. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 97%. This work also investigates the wafer bow after in-line high-rate evaporation and shows that the elastic theory overestimates the wafer bow of planar Si wafers. The lower bow is explained with plastic deformation in the Al layer. Due to the plastic deformation only the first 79 K in temperature decrease result in a bow formation. Furthermore the electrical properties of evaporated point contacts are examined in this work. Parameterizations for the measured saturation currents of contacted p-type Si wafers and of contacted boron-diffused p{sup +}-type layers are presented. The contact resistivity of the deposited Al layers to silicon for various deposition processes and silicon surface concentrations are presented and the activation energy of the contact formation is determined. The measured saturation current densities and contact resistivities of the evaporated contacts are used in one-dimensional numerical Simulations and the impact on energy conversion efficiency of replacing a screen-printed rear side by an evaporated rear side is presented. For the first time the formation of aluminum-doped p{sup +}-type (Al-p{sup +}) silicon regions by the in

  2. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  3. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  4. Metal oxide-encapsulated dye-sensitized photoanodes for dye-sensitized solar cells

    Science.gov (United States)

    Hupp, Joseph T.; Son, Ho-Jin

    2016-01-12

    Dye-sensitized semiconducting metal oxide films for photoanodes, photoanodes incorporating the films and DSCs incorporating the photoanodes are provided. Also provided are methods for making the dye sensitized semiconducting metal oxide films. The methods of making the films are based on the deposition of an encapsulating layer of a semiconducting metal oxide around the molecular anchoring groups of photosensitizing dye molecules adsorbed to a porous film of the semiconducting metal oxide. The encapsulating layer of semiconducting metal oxide is formed in such a way that it is not coated over the chromophores of the adsorbed dye molecules and, therefore, allows the dye molecules to remain electrochemically addressable.

  5. Concentrator-solar-cell development

    Science.gov (United States)

    Grenon, L.

    1982-07-01

    A program is described which is a continuation of earlier programs for the development of high-efficiency, low-cost, silicon concentrator solar cells. The base-line process steps and process sequences identified in these earlier contracts were evaluated and specific processes reviewed. In particular, emphasis on the use of Czochralski-grown silicon wafers rather than float-zone wafers were examined. Additionally, a study of the trade-offs between textured and nontextured cells was initiated, and the limits within which the low-cost plated nickel copper metallization can be used in concentrator solar cell applications was identified.

  6. Hole-Collection Mechanism in Passivating Metal-Oxide Contacts on Si Solar Cells: Insights From Numerical Simulations

    KAUST Repository

    Vijayan, Ramachandran Ammapet

    2018-02-14

    Silicon heterojunction solar cells enable high conversion efficiencies, thanks to their passivating contacts which consist of layered stacks of intrinsic and doped amorphous silicon. However, such contacts may reduce the photo current, when present on the illuminated side of the cell. This motivates the search for wider bandgap contacting materials, such as metal oxides. In this paper, we elucidate the precise impact of the material parameters of MoO$_{x}$ on device characteristics, based on numerical simulations. The simulation results allow us to propose design principles for hole-collecting induced junctions. We find that if MoO$_{x}$ has a sufficiently high electron affinity ($\\\\ge\\\\! \\\\text{{5.7 eV}}$), direct band-to-band tunneling is the dominant transport mechanism; whereas if it has a lower electron affinity ($ <\\\\! \\\\text{{5.7 eV}}$), trap-assisted tunneling dominates, which might introduce additional series resistance. At even lower electron affinity, S-shaped J–V curves may appear for these solar cells, which are found to be due to an insufficient trap state density in the MoO$_{x}$ film in contrast to the expectation of better performance at low trap density. These traps may assist carrier transport when present near the conduction band edge of the MoO$_{x}$ film. Our simulations predict that performance optimization for the MoO$_{x}$ film has to target either 1) a high electron affinity and a moderate doping density film or, 2) if the electron affinity is lower than the optimum value, a high defect density not exceeding the doping density inside the film.

  7. Interfacial engineering of printable bottom back metal electrodes for full-solution processed flexible organic solar cells

    Science.gov (United States)

    Zhen, Hongyu; Li, Kan; Zhang, Yaokang; Chen, Lina; Niu, Liyong; Wei, Xiaoling; Fang, Xu; You, Peng; Liu, Zhike; Wang, Dongrui; Yan, Feng; Zheng, Zijian

    2018-01-01

    Printing of metal bottom back electrodes of flexible organic solar cells (FOSCs) at low temperature is of great significance to realize the full-solution fabrication technology. However, this has been difficult to achieve because often the interfacial properties of those printed electrodes, including conductivity, roughness, work function, optical and mechanical flexibility, cannot meet the device requirement at the same time. In this work, we fabricate printed Ag and Cu bottom back cathodes by a low-temperature solution technique named polymer-assisted metal deposition (PAMD) on flexible PET substrates. Branched polyethylenimine (PEI) and ZnO thin films are used as the interface modification layers (IMLs) of these cathodes. Detailed experimental studies on the electrical, mechanical, and morphological properties, and simulation study on the optical properties of these IMLs are carried out to understand and optimize the interface of printed cathodes. We demonstrate that the highest power conversion efficiency over 3.0% can be achieved from a full-solution processed OFSC with the device structure being PAMD-Ag/PEI/P3HT:PC61BM/PH1000. This device also acquires remarkable stability upon repeating bending tests. Project supported by the Research Grant Council of Hong Kong (No. PolyUC5015-15G), the Hong Kong Polytechnic University (No. G-SB06), and the National Natural Science Foundation of China (Nos. 21125316, 21434009, 51573026).

  8. Schottky diodes between Bi2S3 nanorods and metal nanoparticles in a polymer matrix as hybrid bulk-heterojunction solar cells

    International Nuclear Information System (INIS)

    Saha, Sudip K.; Pal, Amlan J.

    2015-01-01

    We report the use of metal-semiconductor Schottky junctions in a conjugated polymer matrix as solar cells. The Schottky diodes, which were formed between Bi 2 S 3 nanorods and gold nanoparticles, efficiently dissociated photogenerated excitons. The bulk-heterojunction (BHJ) devices based on such metal-semiconductor Schottky diodes in a polymer matrix therefore acted as an efficient solar cell as compared to the devices based on only the semiconductor nanorods in the polymer matrix or when gold nanoparticles were added separately to the BHJs. In the latter device, gold nanoparticles offered plasmonic enhancement due to an increased cross-section of optical absorption. We report growth and characteristics of the Schottky junctions formed through an intimate contact between Bi 2 S 3 nanorods and gold nanoparticles. We also report fabrication and characterization of BHJ solar cells based on such heterojunctions. We highlight the benefit of using metal-semiconductor Schottky diodes over only inorganic semiconductor nanorods or quantum dots in a polymer matrix in forming hybrid BHJ solar cells

  9. Dye solar cells: a different approach to solar energy

    CSIR Research Space (South Africa)

    Le Roux, Lukas J

    2008-11-01

    Full Text Available An attractive and cheaper alternative to siliconbased photovoltaic (PV) cells for the conversion of solar light into electrical energy is to utilise dyeadsorbed, large-band-gap metal oxide materials such as TiO2 to absorb the solar light...

  10. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    NARCIS (Netherlands)

    Franken, R.H.-J.

    2006-01-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy

  11. Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

    Science.gov (United States)

    Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

    2018-03-01

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  12. Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

    2018-03-02

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  13. Solar cell shingle

    Science.gov (United States)

    Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G. (Inventor)

    1977-01-01

    A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.

  14. Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

    Science.gov (United States)

    Gondal, M. A.; Ilyas, A. M.; Baig, Umair

    2016-08-01

    Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO2) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet-visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

  15. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  16. Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator.

    Science.gov (United States)

    Akama, Toshiki; Okita, Wakana; Nagai, Reito; Li, Chao; Kaneko, Toshiro; Kato, Toshiaki

    2017-09-20

    Few-layered transition metal dichalcogenides (TMDs) are known as true two-dimensional materials, with excellent semiconducting properties and strong light-matter interaction. Thus, TMDs are attractive materials for semitransparent and flexible solar cells for use in various applications. Hoewver, despite the recent progress, the development of a scalable method to fabricate semitransparent and flexible solar cells with mono- or few-layered TMDs remains a crucial challenge. Here, we show easy and scalable fabrication of a few-layered TMD solar cell using a Schottky-type configuration to obtain a power conversion efficiency (PCE) of approximately 0.7%, which is the highest value reported with few-layered TMDs. Clear power generation was also observed for a device fabricated on a large SiO 2 and flexible substrate, demonstrating that our method has high potential for scalable production. In addition, systematic investigation revealed that the PCE and external quantum efficiency (EQE) strongly depended on the type of photogenerated excitons (A, B, and C) because of different carrier dynamics. Because high solar cell performance along with excellent scalability can be achieved through the proposed process, our fabrication method will contribute to accelerating the industrial use of TMDs as semitransparent and flexible solar cells.

  17. Rectenna solar cells

    CERN Document Server

    Moddel, Garret

    2013-01-01

    Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

  18. Metal-free organic dyes for TiO2 and ZnO dye-sensitized solar cells

    Science.gov (United States)

    Selopal, Gurpreet Singh; Wu, Hui-Ping; Lu, Jianfeng; Chang, Yu-Cheng; Wang, Mingkui; Vomiero, Alberto; Concina, Isabella; Diau, Eric Wei-Guang

    2016-01-01

    We report the synthesis and characterization of new metal-free organic dyes (namely B18, BTD-R, and CPTD-R) which designed with D-π-A concept to extending the light absorption region by strong conjugation group of π-linker part and applied as light harvester in dye sensitized solar cells (DSSCs). We compared the photovoltaic performance of these dyes in two different photoanodes: a standard TiO2 mesoporous photoanode and a ZnO photoanode composed of hierarchically assembled nanostructures. The results demonstrated that B18 dye has better photovoltaic properties compared to other two dyes (BTD-R and CPTD-R) and each dye has higher current density (Jsc) when applied to hierarchical ZnO nanocrystallites than the standard TiO2 mesoporous film. Transient photocurrent and photovoltage decay measurements (TCD/TVD) were applied to systematically study the charge transport and recombination kinetics in these devices, showing the electron life time (τR) of B18 dye in ZnO and TiO2 based DSSCs is higher than CPTD-R and BTD-R based DSSCs, which is consistent with the photovoltaic performances. The conversion efficiency in ZnO based DSSCs can be further boosted by 35%, when a compact ZnO blocking layer (BL) is applied to inhibit electron back reaction. PMID:26738698

  19. Graphene/zinc aluminum mixed metal oxides photo anode for CdS quantum dot-sensitized solar cell

    Science.gov (United States)

    Cao, Jiupeng; Zhu, Yatong; Yang, Xiaoyu; Liu, Sha; Liu, Dong; Tang, Xiaoyan; Xiao, Hongdi; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

    2017-04-01

    In this study, graphene was used to enhance the photovoltaic performance of the CdS quantum dot-sensitized solar cells (QDSSCs). The zinc aluminum mixed metal oxides (MMO) obtained from layered double hydroxide (LDH) precursor and the graphene/MMO hybrid materials were used as photoanode of the CdS QDSSCs, respectively. Raman spectroscopy, x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS) confirmed the existence of graphene in the photoanodes. The incorporated graphene influenced the specific areas and improved the light harvesting, thus increasing the photogenerated electrons. The addition of graphene improves the power conversion efficiency (PCE) of the QDSSCs, and the highest PCE of the QDSSCs with graphene/Zn-Al MMO photoanode reached 0.18%. Electrochemical impedance measurements indicated that graphene helped to increase the electron transfer rate in the graphene/Zn-Al MMO photoanode and reduce the charge recombination rate. This work highlights that graphene can act as a fast pathway for photogenerated electrons.

  20. An Efficient Metal-Free Hydrophilic Carbon as a Counter Electrode for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Mojgan Kouhnavard

    2016-01-01

    Full Text Available This study presents a new cost-effective metal-free counter electrode (CE for dye-sensitized solar cells (DSSCs. CE was prepared by doctor blading a hydrophilic carbon (HC particle on a fluorine-doped tin oxide substrate. Thereafter, HC CE was characterized using X-ray diffraction, profilometry, four-point probe testing, and cyclic voltammetry. A 2 µm thick HC CE revealed a comparable catalytic activity to that of the Pt electrode under the same experimental conditions. DSSC based on HC CE was analyzed and showed Jsc of 6.87 mA/cm2 close to that of DSSC with Pt CE (7.0 mA/cm2. More importantly, DSSC based on HC CE yielded a power conversion efficiency (η of 2.93% under AM 1.5 irradiation (100 mW/cm2, which was comparable to that of DSSC based on standard Pt CE. These findings suggest that HC CE could be a promising CE for low-cost DSSCs.

  1. Comparison of Nanohole-Type and Nanopillar-Type Patterned Metallic Electrodes Incorporated in Organic Solar Cells

    Science.gov (United States)

    Wang, Wenyan; Cui, Yanxia; Fung, Kin Hung; Zhang, Ye; Ji, Ting; Hao, Yuying

    2017-09-01

    Both the nanohole- and nanopillar-type patterned metallic electrodes (PMEs) have been introduced in organic solar cells (OSCs) for improving device performances experimentally, but there is few work addressing the similarities and differences between them. In this theoretical work, we systematically compare the impact of the nanohole- and nanopillar-type PMEs on the performance of an OSC based on hybridized cavity resonances. By optimizing the geometrical parameters of each PME, we obtained an interesting result that the integrated absorption efficiencies in the active layer with different optimized PMEs are almost the same (both are equal to 82.4%), outperforming that of the planar control by 9.9%. Though the absorption enhancement spectra of the two different optimal devices are similar as well, the mechanisms of light trapping at the corresponding enhancement peaks are distinct from each other. In a comprehensive view, the nanopillar-type PME is suggested to be applied in the present system, since its optimal design has a moderate filling ratio, which is much easier to fabricate than its counterpart. This work could contribute to the development of high-efficiency OSCs.

  2. Solution processed transition metal oxide anode buffer layers for efficiency and stability enhancement of polymer solar cells

    Science.gov (United States)

    Ameen, M. Yoosuf; Shamjid, P.; Abhijith, T.; Reddy, V. S.

    2018-01-01

    Polymer solar cells were fabricated with solution-processed transition metal oxides, MoO3 and V2O5 as anode buffer layers (ABLs). The optimized device with V2O5 ABL exhibited considerably higher power conversion efficiency (PCE) compared to the devices based on MoO3 and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) ABLs. The space charge limited current measurements and impedance spectroscopy results of hole-only devices revealed that V2O5 provided a very low charge transfer resistance and high hole mobility, facilitating efficient hole transfer from the active layer to the ITO anode. More importantly, incorporation of V2O5 as ABL resulted in substantial improvement in device stability compared to MoO3 and PEDOT:PSS based devices. Unencapsulated PEDOT:PSS-based devices stored at a relative humidity of 45% have shown complete failure within 96 h. Whereas, MoO3 and V2O5 based devices stored in similar conditions retained 22% and 80% of their initial PCEs after 96 h. Significantly higher stability of the V2O5-based device is ascribed to the reduction in degradation of the anode/active layer interface, as evident from the electrical measurements.

  3. Metal octacarboxyphthalocyanines on multiwalled carbon nanotubes for dye solar cells application: Synthesis and characterisation

    CSIR Research Space (South Africa)

    Mphahlele, N

    2011-11-01

    Full Text Available to sustain about 108 turnover cycles for about 20 years when exposed to light ? Thermal and photochemical stability ? CSIR 2011 www.csir.co.za Alternative photosensitiser N HOOC HOOC N N N COOH COOH N N COOH COOH N... HOOC HOOC N M N NCS NCS COOH HOOC COOH Ru N N N HOOC N NCS NCS HOOC COOH Ru N N N COO- +TBA TBA+ -OOC a b ? Main components ? light driven process N3 dye N719 dye Metal octacarboxyphthalocyanines The use of MPC...

  4. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  5. Solar cell array interconnects

    Science.gov (United States)

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  6. Solar cell radiation handbook

    Science.gov (United States)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  7. Conjugated Polymer Solar Cells

    National Research Council Canada - National Science Library

    Paraschuk, Dmitry Y

    2006-01-01

    This report results from a contract tasking Moscow State University as follows: Conjugated polymers are promising materials for many photonics applications, in particular, for photovoltaic and solar cell devices...

  8. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  9. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  10. Iron sulphide solar cells

    Science.gov (United States)

    Ennaoui, A.; Tributsch, H.

    1984-12-01

    The abundant, naturally occurring natural compound pyrite (FeS2) can be used as a semiconducting material for photoelectrochemical and photovoltaic solar cells. Unlike most of the intensively studied photoactive materials, pyrite solar cell production would never be limited by the availability of the elements or by their compatibility with the environment. An energy gap of 0.95 eV has been determined for pyrite, and it is noted that the theoretical efficiency limit for solar energy conversion in this material is of the order of 15-20 percent.

  11. Porous ZnO nanosheet arrays constructed on weaved metal wire for flexible dye-sensitized solar cells

    Science.gov (United States)

    Dai, Hui; Zhou, Yong; Chen, Liang; Guo, Binglei; Li, Aidong; Liu, Jianguo; Yu, Tao; Zou, Zhigang

    2013-05-01

    Porous zinc oxide (ZnO) nanosheet (NS) arrays constructed by connected nanocrystallites were built on weaved metal wire (WMW) via hydrothermal treatment followed by calcination, and used as photoanodes for flexible dye-sensitized solar cells (DSSCs). An overall light-to-electricity conversion efficiency (η) of 2.70% was achieved for the DSSC under 100 mW cm-2 illumination, and this η was found to be much higher than that of the DSSC with ZnO nanowire (NW) as the photoanode (0.71%). The far superior performance of the DSSC with ZnO-NS is essentially attributed to: (i) the film consisting of nanosheets with interconnected nanocrystallites can allow relatively direct pathways for the transportation of electrons as the nanosheets have a regular structure with the sheets being oriented to the electrode; (ii) the nanocrystallites assembly and porous character of the nanosheets can provide a large surface area for dye adsorption, which is in favor of enhancing the light absorption and the light propagation; (iii) the nanopores embedded in the nanosheet can act as ``branch lines'' for more efficient electrolyte diffusion into the interstice of the densely packed nanosheets in the array. A further improvement in the efficiency of the DSSC with ZnO-NS was achieved through the atomic layer deposition (ALD) of an ultrathin titanium oxide (TiO2) layer onto the ZnO-NS layer. The larger charge transfer resistance along with the introduction of a TiO2 shell is thought to reduce the surface recombination and thus contribute to the increase in the open circuit voltage (Voc) of the DSCs and higher conversion efficiency (3.09%).Porous zinc oxide (ZnO) nanosheet (NS) arrays constructed by connected nanocrystallites were built on weaved metal wire (WMW) via hydrothermal treatment followed by calcination, and used as photoanodes for flexible dye-sensitized solar cells (DSSCs). An overall light-to-electricity conversion efficiency (η) of 2.70% was achieved for the DSSC under 100 mW cm

  12. Liquid metals for solar power systems

    Science.gov (United States)

    Flesch, J.; Niedermeier, K.; Fritsch, A.; Musaeva, D.; Marocco, L.; Uhlig, R.; Baake, E.; Buck, R.; Wetzel, T.

    2017-07-01

    The use of liquid metals in solar power systems is not new. The receiver tests with liquid sodium in the 1980s at the Plataforma Solar de Almería (PSA) already proved the feasibility of liquid metals as heat transfer fluid. Despite the high efficiency achieved with that receiver, further investigation of liquid metals in solar power systems was stopped due to a sodium spray fire. Recently, the topic has become interesting again and the gained experience during the last 30 years of liquid metals handling is applied to the concentrated solar power community. In this paper, recent activities of the Helmholtz Alliance LIMTECH concerning liquid metals for solar power systems are presented. In addition to the components and system simulations also the experimental setup and results are included.

  13. Highly conductive and transparent silver grid/metal oxide hybrid electrodes for low-temperature planar perovskite solar cells

    Science.gov (United States)

    Zhang, Weihai; Xiong, Juan; Wang, Sheng; Liu, Wei-er; Li, Jun; Wang, Duofa; Gu, Haoshuang; Wang, Xianbao; Li, Jinhua

    2017-01-01

    Recently, organometal halide perovskite solar cells have attracted great attention in photovoltaic research. However, the devices require high-temperature processing of up to 450 °C that hinders the applications in the low cost and large-area product of devices. Here, we reported the ITO/Ag grid/AZO hybrid electrodes for planar perovskite solar cells fabricated under the temperature of 150 °C. The planar perovskite solar cells do not require a mesoporous scaffold that need high-temperature annealing processing. The optimized ITO/Ag grid/AZO electrode which was fabricated as the sequence of ITO, Ag grid, AZO by magnetron sputtering exhibited an extreme low sheet resistance about 3.8 Ω/sq and a relative high transparency of 89.6% at the wavelength of 550 nm. The hybrid electrode could combine the electrical property of ITO and optical property of AZO. On the other hand, AZO has better energy level match with electron transport layer of ZnO than ITO. The power conversion efficiency (PCE) of 13.8% was obtained under the processing temperature of 150 °C by using ITO/Ag grid/AZO electrode. The high performances of the solar cells were attributed to the superior performances of ITO/Ag grid/AZO electrode and the good band energy match between ZnO and AZO.

  14. Four-cell solar tracker

    Science.gov (United States)

    Berdahl, C. M.

    1981-01-01

    Forty cm Sun tracker, consisting of optical telescope and four solar cells, stays pointed at Sun throughout day for maximum energy collection. Each solar cell generates voltage proportional to part of solar image it receives; voltages drive servomotors that keep image centered. Mirrored portion of cylinder extends acquisition angle of device by reflecting Sun image back onto solar cells.

  15. Perovskite Solar Cell

    Indian Academy of Sciences (India)

    Organic–inorganic halide perovskite, a newcomerin the solar cell industry has proved its potential forincreasing efficiency rapidly from 3.8% in 2009 to 22.1% in2016. High efficiency, flexibility, and cell architecture of theemerging hybrid halide perovskite have caught the attentionof researchers and technologists in the field.

  16. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

    1998-10-01

    Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

  17. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  18. Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

    Energy Technology Data Exchange (ETDEWEB)

    Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Ilyas, A.M. [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Baig, Umair [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence for Scientific Research Collaboration with MIT, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2016-08-15

    Highlights: • SiC–TiO{sub 2} semiconducting nanocomposites synthesized by nanosecond PLAL technique. • Synthesized nanocomposites were morphologically and optically characterized. • Nanocomposites were applied for the photocatalytic degradation of toxic organic dye. • Photovoltaic performance was investigated in dye sensitized solar cell. - Abstract: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO{sub 2}) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

  19. Simple metal-free organic D-pi-A dyes with alkoxy- or fluorine substitutions: application in dye sensitized solar cells.

    Science.gov (United States)

    Chandrasekharam, M; Chiranjeevi, B; Gupta, K S V; Singh, Surya Prakash; Islam, A; Han, L; Kantam, M Lakshmi

    2012-06-01

    Two new metal-free organic sensitizers with simplest structural variations have been synthesized for application in nanocrystalline TiO2 sensitized solar cells. The donor-pi-bridge-acceptor (D-pi-A) structure dyes, Y2 and Y3 each designed with three parts, an electron donor unit (substituted phenyl), a linker unit (thiophene), and an anchor unit (cyanoacrylic acid) showed maximal monochromatic incident photon to current conversion efficiencies (IPCE) in a device reaching upto 67% and 82% respectively. The organic sensitizers with 3,4,5-trimethoxy phenyl (Y3) as donor moieties obtained better solar light to electrical energy conversion efficiencies of 3.30% where as the organic sensitizer with 2,4-difluoro phenyl as donor (Y2) showed comparatively lower efficiency of 1.02%. The efficiency obtained with the reference sensitizer N719 under similar fabrication and evaluation conditions was 5.84%.

  20. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  1. Optical and morphological studies of transition metal doped ZnO nanorods and their applications in hybrid bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Syed Mujtaba Shah

    2017-12-01

    Full Text Available One of the challenges in improving the efficiency of hybrid solar cells is to remove crystal defects from the semiconducting nanoparticles. Here we report the synthesis, characterization and applications of transition metal doped ZnO nanorods in hybrid bulk heterojunction solar cells. MnxZn1−xO and NixZn1−xO with dopant concentrations ranging from x = 0.01–0.10 were successfully synthesized by a novel facile solution-processed wet chemical method, which gave better yield at low cost and temperature. The morphological and optical properties of the material were investigated by Transmission electron microscopy (TEM, UV–Visible and Fluorescence spectroscopies. TEM measurements confirmed the reduction in size of nanorods upon doping. UV–Visible spectra of doped nanorods showed blue shift with respect to the reference undoped ZnO. The defect emissions were completely disappeared from the fluorescence spectra upon doping at high concentrations. These doped nanorods in combination with P3HT were employed in the hybrid solar cells which gave better current densities than their corresponding undoped counterparts.

  2. NASA Facts, Solar Cells.

    Science.gov (United States)

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  3. Nature's Solar Cell

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 1; Issue 2. Nature's Solar Cell. Stephen Suresh Gautham Nadig. Research News Volume 1 Issue 2 February 1996 pp 102-104. Fulltext. Click here to view fulltext PDF. Permanent link: http://www.ias.ac.in/article/fulltext/reso/001/02/0102-0104 ...

  4. Emerging Solar Technologies: Perovskite Solar Cell

    Indian Academy of Sciences (India)

    tus of hybrid perovskite solar cells. 1. Introduction. Gradually, primary energy resources such as fossil fuels, coal, and natural gas are depleting, while the global energy consump- tion is increasing. Solar energy, along with wind, biomass, tidal, and geothermal sources is emerging as an answer to our energy- starved planet.

  5. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  6. Composite films of metal doped CoS/carbon allotropes; efficient electrocatalyst counter electrodes for high performance quantum dot-sensitized solar cells.

    Science.gov (United States)

    Khalili, Seyede Sara; Dehghani, Hossein; Afrooz, Malihe

    2017-05-01

    This study reports the enhanced catalytic ability of metal ions-doped CoS and CoS/carbon allotrope counter electrodes (CEs) (synthesized using a successive ionic layer adsorption and reaction (SILAR) method) to improve the power conversion efficiency (η) in quantum dot-sensitized solar cells (QDSSCs). Firstly, doping effects of different metal ions (Mg 2+ , Ca 2+ , Sr 2+ and Ba 2+ ) in the CoS CE on the QDSSCs performance have been investigated. Overall, among the different metal doped CoS CEs, the best energy conversion efficiency of 2.19%, achieved for Sr, is the highest reported for QDSSCs constructed with metal doped CoS. A sandwich structural Sr- and Ba-CoS/carbon allotrope (graphene sheet (GS), graphene oxide (GO) and carbon nanotube (CNT)) composite CEs have been prepared by repeating electrophoretic deposition (EPD) of carbon materials and deposition of CoS nanoparticles. Dramatic enhancements of η have been observed with the Sr- and Ba-CoS/GO CEs based QDSSCs (∼76% and ∼41%, respectively), which is higher than that of the bare CoS CE. Because of the large specific surface area and superior electrical conductivity of GS, GO and CNT and the high electrocatalytic activity of CoS, these CEs show an improvement in the photocurrent density in the cells, as revealed from electrochemical and spectral data. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Investigation of electronic band structure and charge transfer mechanism of oxidized three-dimensional graphene as metal-free anodes material for dye sensitized solar cell application

    Science.gov (United States)

    Loeblein, Manuela; Bruno, Annalisa; Loh, G. C.; Bolker, Asaf; Saguy, Cecile; Antila, Liisa; Tsang, Siu Hon; Teo, Edwin Hang Tong

    2017-10-01

    Dye-sensitized solar cells (DSSCs) offer an optimal trade-off between conversion-efficiency and low-cost fabrication. However, since all its electrodes need to fulfill stringent work-function requirements, its materials have remained unchanged since DSSC's first report early-90s. Here we describe a new material, oxidized-three-dimensional-graphene (o-3D-C), with a band gap of 0.2 eV and suitable electronic band-structure as alternative metal-free material for DSSCs-anodes. o-3D-C/dye-complex has a strong chemical bonding via carboxylic-group chemisorption with full saturation after 12 sec at capacity of ∼450 mg/g (600x faster and 7x higher than optimized metal surfaces). Furthermore, fluorescence quenching of life-time by 28-35% was measured demonstrating charge-transfer from dye to o-3D-C.

  8. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

    1998-12-31

    Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

  9. Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells

    Science.gov (United States)

    Xiong, Shenghu; Yuan, Xiao; Tong, Hua; Yang, Yunxia; Liu, Cui; Ye, Xiaojun; Li, Yongsheng; Wang, Xianhao; Luo, Lan

    2018-04-01

    Circular transmission line model (CTLM) measurements were applied to study the contact formation mechanism of the silver paste metallization on n-type emitter of crystalline silicon solar cells. The electrical performance parameters ρc,Rsk , and Lt , which are related to the physical and chemical states of the multiphase materials at the interface, were extracted from the CTLM measurements, and were found to be sensitive to sintering temperature. As the temperature increased from 585 °C to 780 °C, initially the ρc value decreased rapidly, then flattened out and increased slightly. The order of resistivity magnitude was restricted by the SiNx passivation layer in the early sintering stages, and relied on the carrier tunneling probability affected by the precipitated silver crystallites or colloids, emitter doping concentration and molten glass layer. Based on the calculations that the sheet resistance underneath the electrode was reduced form 110 Ω / □ to 0.186 Ω / □ , it could be inferred that there was formation of a highly conductive layer of silver crystallites and colloids contained glass on the emitter. The transfer length Lt exhibited a U-shaped variation along with the temperature, reflecting the variation of the interfacial electrical properties. Overall, this article shows that the CTLM method can become a new powerful tool for researchers to meet the challenges of silver paste metallization innovation for manufacturing high-efficiency silicon solar cells.

  10. Thermal Stability-Enhanced and High-Efficiency Planar Perovskite Solar Cells with Interface Passivation.

    Science.gov (United States)

    Zhang, Weihai; Xiong, Juan; Jiang, Li; Wang, Jianying; Mei, Tao; Wang, Xianbao; Gu, Haoshuang; Daoud, Walid A; Li, Jinhua

    2017-11-08

    As the electron transport layer (ETL) of perovskite solar cells, oxide semiconductor zinc oxide (ZnO) has been attracting great attention due to its relatively high mobility, optical transparency, low-temperature fabrication, and good environment stability. However, the nature of ZnO will react with the patron on methylamine, which would deteriorate the performance of cells. Although many methods, including high-temperature annealing, doping, and surface modification, have been studied to improve the efficiency and stability of perovskite solar cells with ZnO ETL, devices remain relatively low in efficiency and stability. Herein, we adopted a novel multistep annealing method to deposit a porous PbI 2 film and improved the quality and uniformity of perovskite films. The cells with ZnO ETL were fabricated at the temperature of perovskite film. Interestingly, the PCE of PCBM-passivated cells could reach nearly 19.1%. To our best knowledge, this is the highest PCE value of ZnO-based perovskite solar cells until now. More importantly, PCBM modification could effectively suppress the decomposition of MAPbI 3 and improve the thermal stability of cells. Therefore, the ZnO is a promising candidate of electron transport material for perovskite solar cells in future applications.

  11. Performance comparison of dye-sensitized solar cells by using different metal oxide- coated TiO2 as the photoanode

    Directory of Open Access Journals (Sweden)

    Sun Xuhui

    2014-01-01

    Full Text Available In order to increase the conversion efficiency of dye-sensitized solar cells, TiO2 photoanode surface is often covered with a metal oxide layer to form a core-shell composite structure. Different metal oxide coating on TiO2 as composite photoanodes can affect the cell efficiency variously. However, there still lacks the crosswise comparison among the effects of different metal oxides on TiO2 photoanode. In this study, TiO2 was coated with Al2O3, CaO, ZnO, MgO, Fe2O3 or Bi2O3 separately by liquid phase deposition method. The results indicated that cells with TiO2/Al2O3, TiO2/ZnO, TiO2/CaO, or TiO2/MgO composite film as a photoanode had higher conversion efficiency than those with un-coated TiO2 films. TiO2/Al2O3 showed the highest efficiency and TiO2/CaO ranked second. On the contrary, cells with TiO2/Bi2O3 or TiO2/Fe2O3 composite film as a photoanode had lower conversion efficiency than those with un-coated TiO2 films. The mechanism of the cell efficiency change was also investigated. To get higher conversion efficiency, matched energy level of the metal oxide with TiO2 is the first prerequisite, and then the optimum coating thickness is also a necessary condition.

  12. Plastic Schottky-barrier solar cells

    Science.gov (United States)

    Waldrop, J.R.; Cohen, M.J.

    1981-12-30

    A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

  13. Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jarosław

    2016-01-01

    The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic...... for organic solar cell applications, opening new patterning possibilities....

  14. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  15. Carbon Nanotube Solar Cells

    OpenAIRE

    Klinger, Colin; Patel, Yogeshwari; Postma, Henk W. Ch.

    2012-01-01

    We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabr...

  16. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  17. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  18. Emerging Solar Technologies: Perovskite Solar Cell

    Indian Academy of Sciences (India)

    Organic–inorganic halide perovskite, a newcomerin the solar cell industry has proved its potential forincreasing efficiency rapidly from 3.8% in 2009 to 22.1% in2016. High efficiency, flexibility, and cell architecture of theemerging hybrid halide perovskite have caught the attentionof researchers and technologists in the field.

  19. Emerging Solar Technologies: Perovskite Solar Cell

    Indian Academy of Sciences (India)

    High efficiency, flexibility, and cell architecture of the emerging hybrid halide perovskite have caught the attention of researchers and technologists in the field. This article fo- cuses on the emergence, properties, and current research sta- tus of hybrid perovskite solar cells. 1. Introduction. Gradually, primary energy resources ...

  20. Solar Convective Furnace for Metals Processing

    Science.gov (United States)

    Patidar, Deepesh; Tiwari, Sheetanshu; Sharma, Piyush; Pardeshi, Ravindra; Chandra, Laltu; Shekhar, Rajiv

    2015-11-01

    Metals processing operations, primarily soaking, heat treatment, and melting of metals are energy-intensive processes using fossil fuels, either directly or indirectly as electricity, to operate furnaces at high temperatures. Use of concentrated solar energy as a source of heat could be a viable "green" option for industrial heat treatment furnaces. This paper introduces the concept of a solar convective furnace which utilizes hot air generated by an open volumetric air receiver (OVAR)-based solar tower technology. The potential for heating air above 1000°C exists. Air temperatures of 700°C have already been achieved in a 1.5-MWe volumetric air receiver demonstration plant. Efforts to retrofit an industrial aluminium soaking furnace for integration with a solar tower system are briefly described. The design and performance of an OVAR has been discussed. A strategy for designing a 1/15th-scale model of an industrial aluminium soaking furnace has been presented. Preliminary flow and thermal simulation results suggest the presence of recirculating flow in existing furnaces that could possibly result in non-uniform heating of the slabs. The multifarious uses of concentrated solar energy, for example in smelting, metals processing, and even fuel production, should enable it to overcome its cost disadvantage with respect to solar photovoltaics.

  1. Solar hydrogen production with semiconductor metal oxides: new directions in experiment and theory

    DEFF Research Database (Denmark)

    Valdes, Alvaro; Brillet, Jeremie; Graetzel, Michael

    2012-01-01

    An overview of a collaborative experimental and theoretical effort toward efficient hydrogen production via photoelectrochemical splitting of water into di-hydrogen and di-oxygen is presented here. We present state-of-the-art experimental studies using hematite and TiO2 functionalized with gold...... nanoparticles as photoanode materials, and theoretical studies on electro and photo-catalysis of water on a range of metal oxide semiconductor materials, including recently developed implementation of self-interaction corrected energy functionals....

  2. Enhanced Photovoltaic Performance via Co-sensitization of Ruthenium (II)-Based Complex Sensitizers with Metal-Free Indoline Dye in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Sahu, Swati; Patel, Mohan; Verma, Anil Kumar; Singh, Surya Prakash; Tiwari, Sanjay

    2017-11-01

    Co-sensitization is shown to be an effective method to improve the efficiency of dye-sensitized solar cells wherein ruthenium (ii)-based complex sensitizers (N749, N719) is co-sensitized with the metal-free indoline dye (D149), where photovoltaic efficiency of 5.40% is achieved by co-sensitized N749+D149 and efficiency of 4.94% is achieved by co-sensitized N719+D149. The assembled dye-sensitized solar cells were studied by UVvis absorption measurements of dye solutions, the absorption spectra of the dye-sensitized TiO2 film along with co-sensitized TiO2 film and current-voltage characteristics. The co-sensitized based device exhibits better photovoltaic performance compared to the devices fabricated from individual sensitizers. Upon optimization, the device made of co-sensitized N749+D149 yielded Jsc = 13.6 mA/cm2, Voc = 690 mV, FF = 0.576 and η = 5.40% and the device made of co-sensitized N719+D149 yielded Jsc = 13.3 mA/cm2, Voc = 660mV, FF = 0.563 and η = 4.94%. This demonstrated that the performance of co-sensitized devices is improved from that of the devices sensitized with either N749 (4.56%), N719 (4.24%) or D149 (4.06%) under the same fabrication conditions.

  3. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.

    2011-09-27

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  4. High-temperature complementary metal oxide semiconductors (CMOS)

    International Nuclear Information System (INIS)

    McBrayer, J.D.

    1979-10-01

    Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300 0 C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed

  5. High-temperature complementary metal oxide semiconductors (CMOS)

    Energy Technology Data Exchange (ETDEWEB)

    McBrayer, J.D.

    1979-10-01

    Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300/sup 0/C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed.

  6. Radiation effects in metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Collins, J.L.

    1987-01-01

    The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

  7. Bistability in a complementary metal oxide semiconductor inverter circuit.

    Science.gov (United States)

    Carroll, Thomas L

    2005-09-01

    Radiofrequency signals can disrupt the operation of low frequency circuits. A digital inverter circuit would seem to be immune to such disruption, because its output state usually jumps abruptly between 0 and 5 V. Nevertheless, when driven with a high frequency signal, the inverter can have two coexisting stable states (which are not at 0 and 5 V). Slow switching between these states (by changing the rf signal) will produce a low frequency signal. I demonstrate the bistability in a circuit experiment and in a simple model of the circuit.

  8. Solar cell materials developing technologies

    CERN Document Server

    Conibeer, Gavin J

    2014-01-01

    This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

  9. Dye solar cell research

    CSIR Research Space (South Africa)

    Cummings, F

    2009-11-01

    Full Text Available Cummings Energy and Processes Materials Science and Manufacturing Council for Scientific and Industrial Research P.O. Box 395 Pretoria 0001, South Africa 27 November 2009 CONTENT head2rightBackground head2rightCSIR Dye Solar Cell Research head2... rightCollaborations and Links © CSIR 2007 www.csir.co.za head2rightAcknowledgements BACKGROUND head2rightSA is dry: Annual rainfall average of 450 mm compared with a world average of 860 mm head2rightOn upside, we have some...

  10. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-09-01

    We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

  11. Analytical and numerical analysis of charge carriers extracted by linearly increasing voltage in a metal-insulator-semiconductor structure relevant to bulk heterojunction organic solar cells

    Science.gov (United States)

    Yumnam, Nivedita; Hirwa, Hippolyte; Wagner, Veit

    2017-12-01

    Analysis of charge extraction by linearly increasing voltage is conducted on metal-insulator-semiconductor capacitors in a structure relevant to organic solar cells. For this analysis, an analytical model is developed and is used to determine the conductivity of the active layer. Numerical simulations of the transient current were performed as a way to confirm the applicability of our analytical model and other analytical models existing in the literature. Our analysis is applied to poly(3-hexylthiophene)(P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) which allows to determine the electron and hole mobility independently. A combination of experimental data analysis and numerical simulations reveals the effect of trap states on the transient current and where this contribution is crucial for data analysis.

  12. Al@SiO2 Core-Shell Microflakes as Metal-Based Light Scattering Layer in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Chi-Hui Chien

    2011-01-01

    Full Text Available A metal-based light scattering layer (MLSL for dye-sensitized solar cells (DSSCs is formed from Al@SiO2 core-shell microflakes prepared and coated on a thin porous TiO2 electrode (approximately 4 μm thick. The DSSC corresponding to a TiO2 electrode with an MLSL exhibits a low electron transport resistance in the TiO2/electrolyte interface. Electron collection efficiency is greatly improved. Photovoltaic performance measurements indicate that the power conversion efficiency of the DSSC with the MLSL doubled from 1.37% to 2.96% (for an active area of 0.25 cm2, which is better than the 2.1% achieved by a DSSC with a conventional TiO2-based light scattering layer (TLSL obtained under identical experimental conditions.

  13. Space Solar Cell Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Measures, characterizes, and analyzes photovoltaic materials and devices. The primary focus is the measurement and characterization of solar cell response...

  14. Core-shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells

    Science.gov (United States)

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-07-01

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs.To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a

  15. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  16. Multiple electron injection dynamics in linearly-linked two dye co-sensitized nanocrystalline metal oxide electrodes for dye-sensitized solar cells.

    Science.gov (United States)

    Shen, Qing; Ogomi, Yuhei; Park, Byung-wook; Inoue, Takafumi; Pandey, Shyam S; Miyamoto, Akari; Fujita, Shinsuke; Katayama, Kenji; Toyoda, Taro; Hayase, Shuzi

    2012-04-07

    Understanding the electron transfer dynamics at the interface between dye sensitizer and semiconductor nanoparticle is very important for both a fundamental study and development of dye-sensitized solar cells (DSCs), which are a potential candidate for next generation solar cells. In this study, we have characterized the ultrafast photoexcited electron dynamics in a newly produced linearly-linked two dye co-sensitized solar cell using both a transient absorption (TA) and an improved transient grating (TG) technique, in which tin(IV) 2,11,20,29-tetra-tert-butyl-2,3-naphthalocyanine (NcSn) and cis-diisothiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylato)ruthenium(II) bis(tetrabutylammonium) (N719) are molecularly and linearly linked and are bonded to the surface of a nanocrystalline tin dioxide (SnO(2)) electrode by a metal-O-metal linkage (i.e. SnO(2)-NcSn-N719). By comparing the TA and TG kinetics of NcSn, N719, and hybrid NcSn-N719 molecules adsorbed onto both of the SnO(2) and zirconium dioxide (ZrO(2)) nanocrystalline films, the forward and backward electron transfer dynamics in SnO(2)-NcSn-N719 were clarified. We found that there are two pathways for electron injection from the linearly-linked two dye molecules (NcSn-N719) to SnO(2). The first is a stepwise electron injection, in which photoexcited electrons first transfer from N719 to NcSn with a transfer time of 0.95 ps and then transfer from NcSn to the conduction band (CB) of SnO(2) with two timescales of 1.6 ps and 4.2 ps. The second is direct photoexcited electron transfer from N719 to the CB of SnO(2) with a timescale of 20-30 ps. On the other hand, back electron transfer from SnO(2) to NcSn is on a timescale of about 2 ns, which is about three orders of magnitude slower compared to the forward electron transfer from NcSn to SnO(2). The back electron transfer from NcSn to N719 is on a timescale of about 40 ps, which is about one order slower compared to the forward electron transfer from N719 to Nc

  17. Core–shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells

    KAUST Repository

    Mahmood, Khalid

    2015-01-01

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs. This journal is © The Royal Society of Chemistry.

  18. An Introduction to Solar Cells

    Science.gov (United States)

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  19. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  20. Topology optimization for improving the performance of solar cells

    NARCIS (Netherlands)

    Gupta, D.K.; Langelaar, M.; Keulen, F. van; Barink, M.

    2014-01-01

    This work introduces the application of Topology Optimization (TO) to design optimal front metallization patterns for solar cells and increase their power output. A challenging aspect of the solar cell electrode design problem is the strong nonlinear relation between the active layer current and the

  1. Upconversion in solar cells

    Science.gov (United States)

    2013-01-01

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells. PMID:23413889

  2. Photon management in solar cells

    CERN Document Server

    Rau, Uwe; Gombert, Andreas

    2015-01-01

    Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

  3. Si Microwire Array Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Putnam, Morgan C.; Boettcher, Shannon W.; Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Spurgeon, Joshua M.; Warren, Emily L.; Briggs, Ryan M.; Lewis, Nathan S.; Atwater, Harry A.

    2010-01-01

    Si microwire-array solar cells with Air Mass 1.5 Global conversion efficiencies of up to 7.9% have been fabricated using an active volume of Si equivalent to a 4 μm thick Si wafer. These solar cells exhibited open-circuit voltages of 500 mV, short-circuit current densities (J{sub sc}) of up to 24 mA cm{sup -2}, and fill factors >65% and employed Al{sub 2}O{sub 3} dielectric particles that scattered light incident in the space between the wires, a Ag back reflector that prevented the escape of incident illumination from the back surface of the solar cell, and an a-SiN{sub x}:H passivation/anti-reflection layer. Wire-array solar cells without some or all of these design features were also fabricated to demonstrate the importance of the light-trapping elements in achieving a high J{sub sc}. Scanning photocurrent microscopy images of the microwire-array solar cells revealed that the higher J{sub sc} of the most advanced cell design resulted from an increased absorption of light incident in the space between the wires. Spectral response measurements further revealed that solar cells with light-trapping elements exhibited improved red and infrared response, as compared to solar cells without light-trapping elements.

  4. Electron Acceptor Materials Engineering in Colloidal Quantum Dot Solar Cells

    KAUST Repository

    Liu, Huan

    2011-07-15

    Lead sulfide colloidal quantum dot (CQD) solar cells with a solar power conversion efficiency of 5.6% are reported. The result is achieved through careful optimization of the titanium dioxide electrode that serves as the electron acceptor. Metal-ion-doped sol-gel-derived titanium dioxide electrodes produce a tunable-bandedge, well-passivated materials platform for CQD solar cell optimization. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Advances in solar cell welding technology

    Energy Technology Data Exchange (ETDEWEB)

    Chidester, L.G.; Lott, D.R.

    1982-09-01

    In addition to developing the rigid substrate welded conventional cell panels for an earlier U.S. flight program, LMSC recently demonstrated a welded lightweight array system using both 2 x 4 and 5.9 x 5.9 cm wraparound solar cells. This weld system uses infrared sensing of weld joint temperature at the cell contact metalization interface to precisely control weld energy on each joint. Modules fabricated using this weld control system survived lowearth-orbit simulated 5-year tests (over 30,000 cycles) without joint failure. The data from these specifically configured modules, printed circuit substrate with copper interconnect and dielectric wraparound solar cells, can be used as a basis for developing weld schedules for additional cell array panel types.

  6. The effect of multi-walled carbon nanotubes on metal octacarboxyphthalocyanines for dye solar cells application: synthesis and characterisation

    CSIR Research Space (South Africa)

    Mphahlele, N

    2012-10-01

    Full Text Available . Metallophthalocyanine (MPc) complexes, especially those containing diamagnetic metal centres (M = Zn, Ga, Si), are well established as efficient photosensitisers [2]. A significant effort has been made to enhance the photosensitization properties in DSCs by modifying...

  7. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

  8. Silicon MIS/inversion-layer solar cells

    Science.gov (United States)

    Olsen, L. C.

    1982-10-01

    Silicon Metal-Insulator-Semiconductor/Inversion-Layer (MIS-IL) solar cells were investigated as an approach to low cost terrestrial photovoltaics. Considerable progress was made concerning the development of procedures for SiO deposition for inversion-layer formation, the characterization of the fixed charge in deposited SiO layers, surface state density at the Si-SiO interface, fabrication and characterization of MIS-IL solar cells. Improvements were also made in the theory of MIS-IL solar cells, and utilized to calculate cell performance for a range of insulator charge and base resistivities. Inversion layer formation was studied in several ways. MOS devices was analyzed to determine the magnitude of the net positive charge, Q/sub POS/, vensus surface potential, Psi/sub S/. In situ sheet resistance measurements was made to determine the charge distribution within the deposited SiO layer. Finally, estimates of Q/sub POS/ obtained by comparing experimental results for MIS-IL cells and theory are compared with values of Q/sub POS/ determined for MOS structures fabricated simultaneously with the solar cells. Cell fabrication procedures emphasized low temperature processing.

  9. Neutral- and Multi-Colored Semitransparent Perovskite Solar Cells.

    Science.gov (United States)

    Lee, Kyu-Tae; Guo, L Jay; Park, Hui Joon

    2016-04-11

    In this review, we summarize recent works on perovskite solar cells with neutral- and multi-colored semitransparency for building-integrated photovoltaics and tandem solar cells. The perovskite solar cells exploiting microstructured arrays of perovskite "islands" and transparent electrodes-the latter of which include thin metallic films, metal nanowires, carbon nanotubes, graphenes, and transparent conductive oxides for achieving optical transparency-are investigated. Moreover, the perovskite solar cells with distinctive color generation, which are enabled by engineering the band gap of the perovskite light-harvesting semiconductors with chemical management and integrating with photonic nanostructures, including microcavity, are discussed. We conclude by providing future research directions toward further performance improvements of the semitransparent perovskite solar cells.

  10. TRANSPARENT COATINGS FOR SOLAR CELLS RESEARCH

    Energy Technology Data Exchange (ETDEWEB)

    Glatkowski, P. J.; Landis, D. A.

    2013-04-16

    Todays solar cells are fabricated using metal oxide based transparent conductive coatings (TCC) or metal wires with optoelectronic performance exceeding that currently possible with Carbon Nanotube (CNT) based TCCs. The motivation for replacing current TCC is their inherent brittleness, high deposition cost, and high deposition temperatures; leading to reduced performance on thin substrates. With improved processing, application and characterization techniques Nanofiber and/or CNT based TCCs can overcome these shortcomings while offering the ability to be applied in atmospheric conditions using low cost coating processes At todays level of development, CNT based TCC are nearing commercial use in touch screens, some types of information displays (i.e. electronic paper), and certain military applications. However, the resistivity and transparency requirements for use in current commercial solar cells are more stringent than in many of these applications. Therefore, significant research on fundamental nanotube composition, dispersion and deposition are required to reach the required performance commanded by photovoltaic devices. The objective of this project was to research and develop transparent conductive coatings based on novel nanomaterial composite coatings, which comprise nanotubes, nanofibers, and other nanostructured materials along with binder materials. One objective was to show that these new nanomaterials perform at an electrical resistivity and optical transparency suitable for use in solar cells and other energy-related applications. A second objective was to generate new structures and chemistries with improved resistivity and transparency performance. The materials also included the binders and surface treatments that facilitate the utility of the electrically conductive portion of these composites in solar photovoltaic devices. Performance enhancement venues included: CNT purification and metallic tube separation techniques, chemical doping, CNT

  11. Dust Removal from Solar Cells

    Science.gov (United States)

    Ashpis, David E. (Inventor)

    2015-01-01

    A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind "generated."

  12. High Efficiency, Deployable Solar Cells

    Data.gov (United States)

    National Aeronautics and Space Administration — Ultrathin, lightweight, flexible, and easily deployable solar cell (SC) capable of specific power greater than 1kW/kg is the target of this development and are at an...

  13. Passivated emitters in silicon solar cells

    International Nuclear Information System (INIS)

    King, R.R.; Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

    1990-01-01

    In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J o , of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration was extracted. The lowest observed values of J o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data have been applied to two types of backside-contact solar cells with large area (37.5 cm 2 ) and one-sun efficiencies up to 22.7%

  14. Solar cell module assembly jig

    Science.gov (United States)

    Ofarrell, H. W. (Inventor)

    1966-01-01

    The invention relates to the manufacture of solar cell modules and more particularly to a jig for assembling, positioning and maintaining the components under resilient pressure, while the entire assembly and the jig is subjected to heat for simultaneously soldering all of the various circuit connections; as well as structurally bonding the layers into a strong light weight structure which minimizes the tendency of the solar cells to crack and the other components and electrical connections to fracture.

  15. Solar cell with back side contacts

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  16. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  17. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  18. Edge-selenated graphene nanoplatelets as durable metal-free catalysts for iodine reduction reaction in dye-sensitized solar cells.

    Science.gov (United States)

    Ju, Myung Jong; Jeon, In-Yup; Kim, Hong Mo; Choi, Ji Il; Jung, Sun-Min; Seo, Jeong-Min; Choi, In Taek; Kang, Sung Ho; Kim, Han Seul; Noh, Min Jong; Lee, Jae-Joon; Jeong, Hu Young; Kim, Hwan Kyu; Kim, Yong-Hoon; Baek, Jong-Beom

    2016-06-01

    Metal-free carbon-based electrocatalysts for dye-sensitized solar cells (DSSCs) are sufficiently active in Co(II)/Co(III) electrolytes but are not satisfactory in the most commonly used iodide/triiodide (I(-)/I3 (-)) electrolytes. Thus, developing active and stable metal-free electrocatalysts in both electrolytes is one of the most important issues in DSSC research. We report the synthesis of edge-selenated graphene nanoplatelets (SeGnPs) prepared by a simple mechanochemical reaction between graphite and selenium (Se) powders, and their application to the counter electrode (CE) for DSSCs in both I(-)/I3 (-) and Co(II)/Co(III) electrolytes. The edge-selective doping and the preservation of the pristine graphene basal plane in the SeGnPs were confirmed by various analytical techniques, including atomic-resolution transmission electron microscopy. Tested as the DSSC CE in both Co(bpy)3 (2+/3+) (bpy = 2,2'-bipyridine) and I(-)/I3 (-) electrolytes, the SeGnP-CEs exhibited outstanding electrocatalytic performance with ultimately high stability. The SeGnP-CE-based DSSCs displayed a higher photovoltaic performance than did the Pt-CE-based DSSCs in both SM315 sensitizer with Co(bpy)3 (2+/3+) and N719 sensitizer with I(-)/I3 (-) electrolytes. Furthermore, the I3 (-) reduction mechanism, which has not been fully understood in carbon-based CE materials to date, was clarified by an electrochemical kinetics study combined with density functional theory and nonequilibrium Green's function calculations.

  19. Design of Novel Metal Nanostructures for Broadband Solar Energy Conversion

    Directory of Open Access Journals (Sweden)

    Kristine A. Zhang

    2015-01-01

    Full Text Available Solar power holds great potential as an alternative energy source, but current photovoltaic cells have much room for improvement in cost and efficiency. Our objective was to develop metal nanostructures whose surface plasmon resonance (SPR spectra closely match the solar spectrum to enhance light absorption and scattering. We employed the finite-difference time-domain simulation method to evaluate the effect of varying key parameters. A novel nanostructure with SPR absorption matching a region of the solar spectrum (300 to 1500 nm that contains 90% of solar energy was successfully designed. This structure consists of a large gold-silica core-shell structure with smaller gold nanoparticles and nanorods on its surface. Such complex nanostructures are promising for broad and tunable absorption spectra. In addition, we investigated the SPR of silver nanoparticle arrays, which can achieve scattering close to the solar spectrum. We demonstrated an improvement in efficiency of over 30% with optimal nanoparticle radius and periods of 75 nm and 325 nm, respectively. In combination, our studies enable high-efficiency, tunable, and cost-effective enhancement of both light absorption and scattering, which has potential applications in solar energy conversion as well as biomedical imaging.

  20. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  1. Nitrogen and sulfur dual-doped chitin-derived carbon/graphene composites as effective metal-free electrocatalysts for dye sensitized solar cells

    Science.gov (United States)

    Di, Yi; Xiao, Zhanhai; Yan, Xiaoshuang; Ru, Geying; Chen, Bing; Feng, Jiwen

    2018-05-01

    The photovoltaic performance of dye-sensitized solar cell (DSSC) is strongly influenced by the electrocatalytic ability of its counter electrode (CE) materials. To obtain the affordable and high-performance electrocatalysts, the N/S dual-doped chitin-derived carbon materials SCCh were manufactured via in-situ S-doped method in the annealing process, where richer active sites are created compared to the pristine chitin-derived carbon matrix CCh, thus enhancing the intrinsic catalytic activity of carbon materials. When SCCh is incorporated with graphene, the yielded composites hold a further boosted catalytic activity due to facilitating the electronic fast transfer. The DSSC assembled with the optimizing rGO-SCCh-3 composite CE shows a favourable power conversion efficiency of 6.36%, which is comparable with that of the Pt-sputtering electrode (6.30%), indicate of the outstanding I3- reduction ability of the composite material. The electrochemical characterizations demonstrate that the low charge transfer resistance and excellent electrocatalytic activity all contribute to the superior photovoltaic performance. More importantly, the composite CE exhibits good electrochemical stability in the practical operation. In consideration of the low cost and the simple preparation procedure, the present metal-free carbonaceous composites could be used as a promising counter electrode material in future large scale production of DSSCs.

  2. Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors

    Science.gov (United States)

    He, Jun; Sun, Lin; Chen, Ye; Jiang, Jinchun; Yang, Pingxiong; Chu, Junhao

    2015-01-01

    Effects of sulfurization pressure on composition, morphology and microstructure of kesterite Cu2ZnSnS4 (CZTS) thin films obtained by sulfurization of the metallic layers have been investigated in detail. It is found that the S content in the CZTS thin films is strongly dependent on the sulfurization pressure. The CZTS thin films sulfurized under low sulfurization pressure have S-poor state with a bilayer structure, while it exhibits sufficient amounts of sulfur under high sulfurization pressure with grain growth throughout the entire absorber film. X-ray diffraction data indicate lower sulfurization pressure during the CZTS grain growth process can induce the formation of more structural defects in the CZTS lattice and the CZTS thin films sulfurized under high sulfurization pressure have more random orientation. Furthermore, ZnS and MoS2 phase exist in all samples determined by Fourier transform infrared reflectance spectroscopy as complementary to Raman spectroscopy. The solar cell fabricated with the CZTS thin film under 10 Torr sulfurization pressure shows the best conversion efficiency of 3.52% (VOC = 484 mV, JSC = 14.56 mA cm-2, FF = 50.1%).

  3. Radiation hard solar cell and array

    International Nuclear Information System (INIS)

    Russell, R.L.

    1975-01-01

    A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

  4. Investigation of advanced nanostructured multijunction photoanodes for enhanced solar hydrogen generation via water splitting

    Science.gov (United States)

    Ishihara, Hidetaka

    As the worldwide demand for fossil-based fuel increases every day and the fossil reserve continues to be depleted, the need for alternative/renewable energy sources has gained momentum. Electric, hybrid, and hydrogen cars have been at the center of discussion lately among consumers, automobile manufacturers, and politicians, alike. The development of a fuel-cell based engine using hydrogen has been an ambitious research area over the last few decades-ever since Fujishima showed that hydrogen can be generated via the solar-energy driven photo-electrolytic splitting of water. Such solar cells are known as Photo-Electro-Chemical (PEC) solar cells. In order to commercialize this technology, various challenges associated with photo-conversion efficiency, chemical corrosion resistance, and longevity need to be overcome. In general, metal oxide semiconductors such as titanium dioxide (TiO 2, titania) are excellent candidates for PEC solar cells. Titania nanotubes have several advantages, including biocompatibility and higher chemical stability. Nevertheless, they can absorb only 5-7% of the solar spectrum which makes it difficult to achieve the higher photo-conversion efficiency required for successful commercial applications. A two-prong approach was employed to enhance photo-conversion efficiency: 1) surface modification of titania nanotubes using plasma treatment and 2) nano-capping of the titania nanotubes using titanium disilicide. The plasma surface treatment with N2 was found to improve the photo-current efficiency of titania nanotubes by 55%. Similarly, a facile, novel approach of nano-capping titania nanotubes to enhance their photocurrent response was also investigated. Electrochemically anodized titania nanotubes were capped by coating a 25 nm layer of titanium disilicide using RF magnetron sputtering technique. The optical properties of titania nanotubes were not found to change due to the capping; however, a considerable increase (40%) in the photocurrent

  5. Laser scanning of experimental solar cells

    Science.gov (United States)

    Plunkett, B. C.; Lasswell, P. G.

    1980-01-01

    A description is presented of a laser scanning instrument which makes it possible to display and measure the spatial response of a solar cell. Examples are presented to illustrate the use of generated micrographs in the isolation of flaws and features of the cell. The laser scanner system uses a 4 mW, CW helium-neon laser, operating a wavelength of 0.633 micrometers. The beam is deflected by two mirror galvanometers arranged to scan in orthogonal directions. After being focused on the solar cell by the beam focusing lens, the moving light spot raster scans the specimen. The current output of the photovoltaic device under test, as a function of the scan dot position, can be displayed in several modes. The laser scanner has proved to be a very useful diagnostic tool in optimizing the process design of transparent metal film photovoltaic devices on Zn3P2, a relatively new photovoltaic material.

  6. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  7. Advances in Perovskite Solar Cells

    Science.gov (United States)

    Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

    2016-01-01

    Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed. PMID:27812475

  8. Copper (I) oxide (Cu 2 ) based solar cells - a review | Abdu | Bayero ...

    African Journals Online (AJOL)

    Copper (I) oxide (Cu2O) is a potential material for the fabrication of low cost solar cells for terrestrial application. A detailed survey on the previous work so far carried out on Cu2O based solar cells has been presented. The aspects discussed include the fabrication of Schottky (metal/semiconductor) barrier Cu2O solar cells, ...

  9. Rehydrating dye sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Christian Hellert

    2017-05-01

    Full Text Available Dye sensitized solar cells (DSSCs are silicon free, simply producible solar cells. Longevity, however, is a longstanding problem for DSSCs. Due to liquid electrolytes being commonly used, evaporation of the electrolyte causes a dramatic drop in electric output as cells continue to be used unmaintained. Stopping evaporation has been tried in different ways in the past, albeit with differing degrees of success. In a recent project, a different route was chosen, exploring ways of revitalizing DSSCs after varying periods of usage. For this, we focused on rehydration of the cells using distilled water as well as the electrolyte contained in the cells. The results show a significant influence of these rehydration procedures on the solar cell efficiency. In possible applications of DSSCs in tents etc., morning dew may thus be used for rehydration of solar cells. Refillable DSSCs can also be used in tropical climates or specific types of farms and greenhouses where high humidity serves the purpose of rehydrating DSSCs.

  10. A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.

    Science.gov (United States)

    Lin, Qinxian; Su, Yantao; Zhang, Ming-Jian; Yang, Xiaoyang; Yuan, Sheng; Hu, Jiangtao; Lin, Yuan; Liang, Jun; Pan, Feng

    2016-09-14

    Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement.

  11. The Impact of Polyvinylpyrrolidone on Properties of Cadmium Oxide Semiconductor Nanoparticles Manufactured by Heat Treatment Technique

    Directory of Open Access Journals (Sweden)

    Naif Mohammed Al-Hada

    2016-04-01

    Full Text Available Cadmium oxide semiconductor nanoparticles were produced using a water based mixture, incorporating cadmium nitrates, polyvinyl pyrrolidone (PVP, and calcination temperature. An X-ray diffraction (XRD evaluation was conducted to determine the degree of crystallization of the semiconductor nanoparticles. In addition, scanning electron microscopy (SEM was conducted to identify the morphological features of the nanoparticles. The typical particle sizes and particle dispersal were analyzed via the use of transmission electron microscopy (TEM. The findings provided further support for the XRD outcomes. To determine the composition phase, Fourier transform infrared spectroscopy (FT-IR was conducted, as it indicated the existence of not only metal oxide ionic band in the selection of samples, but also the efficient removal of organic compounds following calcinations. The optical characteristics were demonstrated, so as to analyze the energy band gap via the use of a UV–Vis spectrophotometer. A reduced particle size resulted in diminution of the intensity of photoluminescence, was demonstrated by PL spectra. Plus, the magnetic characteristics were examined using an electron spin resonance (ESR spectroscopy, which affirmed the existence of unpaired electrons.

  12. Cu(In,Ga)Se2Solar Cells with Amorphous In2O3-Based Front Contact Layers.

    Science.gov (United States)

    Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

    2017-09-06

    Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

  13. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  14. Contact formation in gallium arsenide solar cells

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  15. Photon upconversion for thin film solar cells

    NARCIS (Netherlands)

    de Wild, J.

    2012-01-01

    In this research one of the many possible methods to increase the efficiency of solar cells is described. The method investigated is based on adapting the solar light in such a way that the solar cell can convert more light into electricity. The part of the solar spectrum that is adapted is the part

  16. Solar cell circuit and method for manufacturing solar cells

    Science.gov (United States)

    Mardesich, Nick (Inventor)

    2010-01-01

    The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

  17. Rational Strategies for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

    2016-03-15

    A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on

  18. Accelerated stress testing of terrestrial solar cells

    Science.gov (United States)

    Lathrop, J. W.; Hawkins, D. C.; Prince, J. L.; Walker, H. A.

    1982-01-01

    The development of an accelerated test schedule for terrestrial solar cells is described. This schedule, based on anticipated failure modes deduced from a consideration of IC failure mechanisms, involves bias-temperature testing, humidity testing (including both 85-85 and pressure cooker stress), and thermal-cycle thermal-shock testing. Results are described for 12 different unencapsulated cell types. Both gradual electrical degradation and sudden catastrophic mechanical change were observed. These effects can be used to discriminate between cell types and technologies relative to their reliability attributes. Consideration is given to identifying laboratory failure modes which might lead to severe degradation in the field through second quadrant operation. Test results indicate that the ability of most cell types to withstand accelerated stress testing depends more on the manufacturer's design, processing, and worksmanship than on the particular metallization system. Preliminary tests comparing accelerated test results on encapsulated and unencapsulated cells are described.

  19. Native defects in oxide semiconductors: a density functional approach.

    Science.gov (United States)

    Oba, Fumiyasu; Choi, Minseok; Togo, Atsushi; Seko, Atsuto; Tanaka, Isao

    2010-09-29

    We report a semilocal and hybrid Hartree-Fock density functional study of native defects in three oxide semiconductors: ZnO, SrTiO(3), and SnO. The defect that is responsible for the n-type conductivity of ZnO has been debated, in which the O vacancy, Zn interstitial, their complexes, and residual H impurity are considered candidates. Our results indicate that the O vacancy induces a deep and localized in-gap state, whereas the Zn interstitial is a shallow donor and hence can be a source of the carriers. In view of the formation energies, the O vacancy is likely to form with a substantial concentration under O-poor conditions, but the Zn interstitial is unlikely. We thus propose that the O vacancy is relevant to the nonstoichiometry of ZnO and that a source other than the native defects, such as the H impurity, needs to be considered for the n-type conductivity. For SrTiO(3), the O vacancy and its complexes have been regarded as the origins of some of the remarkable electrical and optical properties. We suggest significant roles of the Ti antisite for a new insight into the defect-induced properties. Two types of Ti antisite, both of which are off-centered from the Sr site but toward different directions, exhibit low formation energies under Ti-rich conditions as does the O vacancy. They can explain optical properties such as visible-light emission, deep-level absorption, and the ferroelectricity observed in reduced SrTiO(3). As an example of p-type conductors, SnO has been investigated with a focus on the acceptor-like native defects. Under O-rich conditions, the Sn vacancy and O interstitial are found to be energetically favorable. The Sn vacancy induces shallow acceptor levels and can therefore be a source of carriers. The O interstitial shows no in-gap levels and hence it is inactive in terms of the carrier generation and compensation. However, this defect is a key to the understanding of the structures of intermediate compounds between SnO and SnO(2).

  20. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  1. Incineration of organic solar cells

    NARCIS (Netherlands)

    Søndergaard, Roar R.; Zimmermann, Yannick Serge; Espinosa, Nieves; Lenz, Markus; Krebs, Frederik

    2016-01-01

    Recovery of silver from the electrodes of roll-to-roll processed organic solar cells after incineration has been performed quantitatively by extraction with nitric acid. This procedure is more than 10 times faster than previous reports and the amount of acid needed for the extraction is reduced

  2. Graded bandgap perovskite solar cells

    Science.gov (United States)

    Ergen, Onur; Gilbert, S. Matt; Pham, Thang; Turner, Sally J.; Tan, Mark Tian Zhi; Worsley, Marcus A.; Zettl, Alex

    2017-05-01

    Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies, and indeed perovskite-based single bandgap and tandem solar cell designs have yielded impressive performances. One approach to further enhance solar spectrum utilization is the graded bandgap, but this has not been previously achieved for perovskites. In this study, we demonstrate graded bandgap perovskite solar cells with steady-state conversion efficiencies averaging 18.4%, with a best of 21.7%, all without reflective coatings. An analysis of the experimental data yields high fill factors of ~75% and high short-circuit current densities up to 42.1 mA cm-2. The cells are based on an architecture of two perovskite layers (CH3NH3SnI3 and CH3NH3PbI3-xBrx), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel.

  3. Organic and hybrid solar cells

    CERN Document Server

    Huang, Hui

    2014-01-01

    This book delivers a comprehensive evaluation of organic and hybrid solar cells and identifies their fundamental principles and numerous applications. Great attention is given to the charge transport mechanism, donor and acceptor materials, interfacial materials, alternative electrodes, device engineering and physics, and device stability. The authors provide an industrial perspective on the future of photovoltaic technologies.

  4. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  5. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Abstract. A major issue encountered during fabrication of triple junction a-Si solar cells on polyimide sub- strates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and ...

  6. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the ...

  7. Application and analysis of silicon nitride films for surface passivation of high efficiency silicon solar cells

    NARCIS (Netherlands)

    Lamers, M.W.P.E.

    2015-01-01

    Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the emitter-contact metallization of the front side is wrapped through holes in the wafer to the cell back. Optimization of several cell processing steps led to an increase of more than 2% absolute in cell

  8. Morphology of polymer solar cells

    DEFF Research Database (Denmark)

    Böttiger, Arvid P.L.

    the morphology of the active layer of the solar cells when produced with water based inks using R2R coating. Using a broad range of scattering and imaging techniques, cells coated with water based inks were investigated, and compared to their spin coated counterpart. Two challenges to be addressed were small...... cells. Ptychography offers desirable properties such as potentially high resolution, quantitative contrast and possibility for tomography. Both these X-ray imaging techniques were used to measure the samples with high spatial and chemical resolution. In addition, these experiments explored and reviewed...

  9. Perovskite-Based Solar Cells: Materials, Methods, and Future Perspectives

    Directory of Open Access Journals (Sweden)

    Di Zhou

    2018-01-01

    Full Text Available A novel all-solid-state, hybrid solar cell based on organic-inorganic metal halide perovskite (CH3NH3PbX3 materials has attracted great attention from the researchers all over the world and is considered to be one of the top 10 scientific breakthroughs in 2013. The perovskite materials can be used not only as light-absorbing layer, but also as an electron/hole transport layer due to the advantages of its high extinction coefficient, high charge mobility, long carrier lifetime, and long carrier diffusion distance. The photoelectric power conversion efficiency of the perovskite solar cells has increased from 3.8% in 2009 to 22.1% in 2016, making perovskite solar cells the best potential candidate for the new generation of solar cells to replace traditional silicon solar cells in the future. In this paper, we introduce the development and mechanism of perovskite solar cells, describe the specific function of each layer, and focus on the improvement in the function of such layers and its influence on the cell performance. Next, the synthesis methods of the perovskite light-absorbing layer and the performance characteristics are discussed. Finally, the challenges and prospects for the development of perovskite solar cells are also briefly presented.

  10. Optical design of transparent thin metal electrodes to enhance in-coupling and trapping of light in flexible polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Salinas, Jose-Francisco [Department of Material Science and Engineering, University of Washington, Seattle, Washington, 98195 (United States); Centro de Investigaciones en Optica A.P.1-948, Leon, Guanajuato, CP 37000 (Mexico); Yip, Hin-Lap; Chueh, Chu-Chen; Li, Chang-Zhi; Jen, Alex K.Y. [Department of Material Science and Engineering, University of Washington, Seattle, Washington, 98195 (United States); Maldonado, Jose-Luis [Centro de Investigaciones en Optica A.P.1-948, Leon, Guanajuato, CP 37000 (Mexico)

    2012-12-11

    ITO-free polymer solar cells with efficiencies as high as 6.6% and 5.8% are fabricated on glass and polyethylene naphthalate (PEN) by using TeO{sub 2} to enhance the in-coupling of light in an Ag-Ag microcavity. These cells exhibit higher performance, selective microcavity resonance as a function of the thickness of TeO{sub 2}, and better bending stability than flexible devices made with ITO. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. SLAM examination of solar cells and solar cell welds

    Science.gov (United States)

    Stella, P. M.; Vorres, C. L.; Yuhas, D. E.

    The scanning laser acoustic microscope (SLAM) has been evaluated for non-destructive examination of solar cells and interconnector bonds. Using this technique, it is possible to view through materials in order to reveal regions of discontinuity such as microcracks and voids. Of particular interest is the ability to evaluate, in a unique manner, the bonds produced by parallel gap welding. It is possible to not only determine the area and geometry of the bond between the tab and cell, but also to reveal any microcracks incurred during the welding. By correlating the SLAM results with conventional techniques of weld evaluation a more confident weld parameter optimization can be obtained.

  12. Wearable solar cells by stacking textile electrodes.

    Science.gov (United States)

    Pan, Shaowu; Yang, Zhibin; Chen, Peining; Deng, Jue; Li, Houpu; Peng, Huisheng

    2014-06-10

    A new and general method to produce flexible, wearable dye-sensitized solar cell (DSC) textiles by the stacking of two textile electrodes has been developed. A metal-textile electrode that was made from micrometer-sized metal wires was used as a working electrode, while the textile counter electrode was woven from highly aligned carbon nanotube fibers with high mechanical strengths and electrical conductivities. The resulting DSC textile exhibited a high energy conversion efficiency that was well maintained under bending. Compared with the woven DSC textiles that are based on wire-shaped devices, this stacked DSC textile unexpectedly exhibited a unique deformation from a rectangle to a parallelogram, which is highly desired in portable electronics. This lightweight and wearable stacked DSC textile is superior to conventional planar DSCs because the energy conversion efficiency of the stacked DSC textile was independent of the angle of incident light. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  14. Concentrated sunlight for organic solar cells

    DEFF Research Database (Denmark)

    Tromholt, Thomas

    2010-01-01

    . A high solar intensity study of inverted P3HT:PCBM solar cells is presented. Performance peak positions were found to be in the range of 1-5 suns, with smaller cells peaking at higher solar concentrations. Additionally, concentrated sunlight is demonstrated as a practical tool for accelerated stability...

  15. Recent Development in ITO-free Flexible Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Shudi Lu

    2017-12-01

    Full Text Available Polymer solar cells have shown good prospect for development due to their advantages of low-cost, light-weight, solution processable fabrication, and mechanical flexibility. Their compatibility with the industrial roll-to-roll manufacturing process makes it superior to other kind of solar cells. Normally, indium tin oxide (ITO is adopted as the transparent electrode in polymer solar cells, which combines good conductivity and transparency. However, some intrinsic weaknesses of ITO restrict its large scale applications in the future, including a high fabrication price using high temperature vacuum deposition method, scarcity of indium, brittleness and scaling up of resistance with the increase of area. Some substitutes to ITO have emerged in recent years, which can be used in flexible polymer solar cells. This article provides the review on recent progress using other transparent electrodes, including carbon nanotubes, graphene, metal nanowires and nanogrids, conductive polymer, and some other electrodes. Device stability is also discussed briefly.

  16. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  17. Recent Advances in Solar Cell Technology

    Science.gov (United States)

    Landis, Geoffrey A.; Bailey, Sheila G.; Piszczor, Michael F., Jr.

    1996-01-01

    The advances in solar cell efficiency, radiation tolerance, and cost over the last decade are reviewed. Potential performance of thin-film solar cells in space are discussed, and the cost and the historical trends in production capability of the photovoltaics industry are considered with respect to the requirements of space power systems. Concentrator cells with conversion efficiency over 30%, and nonconcentrating solar cells with efficiency over 25% are now available, and advanced radiation-tolerant cells and lightweight, thin-film arrays are both being developed. Nonsolar applications of solar cells, including thermophotovoltaics, alpha- and betavoltaics, and laser power receivers, are also discussed.

  18. Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyomin Park

    2012-01-01

    Full Text Available To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

  19. Supramolecular photochemistry and solar cells

    Directory of Open Access Journals (Sweden)

    IHA NEYDE YUKIE MURAKAMI

    2000-01-01

    Full Text Available Supramolecular photochemistry as well as solar cells are fascinating topics of current interest in Inorganic Photochemistry and very active research fields which have attracted wide attention in last two decades. A brief outline of the investigations in these fields carried out in our Laboratory of Inorganic Photochemistry and Energy Conversion is given here with no attempt of an exhaustive coverage of the literature. The emphasis is placed on recent work and information on the above mentioned subjects. Three types of supramolecular systems have been the focus of this work: (i cage-type coordination compounds; (ii second-sphere coordination compounds, exemplified by ion-pair photochemistry of cobalt complexes and (iii covalently-linked systems. In the latter, modulation of the photoluminescence and photochemistry of some rhenium complexes are discussed. Solar energy conversion and development of thin-layer photoelectrochemical solar cells based on sensitization of nanocrystalline semiconductor films by some ruthenium polypyridyl complexes are presented as an important application that resulted from specifically engineered artificial assemblies.

  20. Boron-doped carbon nanotubes as metal-free electrocatalyst for dye-sensitized solar cells: Heteroatom doping level effect on tri-iodide reduction reaction

    Science.gov (United States)

    Yeh, Min-Hsin; Leu, Yow-An; Chiang, Wei-Hung; Li, Yan-Sheng; Chen, Guan-Lin; Li, Ta-Jen; Chang, Ling-Yu; Lin, Lu-Yin; Lin, Jiang-Jen; Ho, Kuo-Chuan

    2018-01-01

    Heteroatom-doped carbons have been substantially applied on electrochemical applications for their exceptional electrocatalytic ability and electric conductivity. Among the doping elements, electron-deficient boron (B) is considered to be a promising heteroatom for the chemical doping of carbon materials to modify the chemically inert sp2 carbon structure and thus activate the abundant free-flowing π electrons. In this study, B-doped carbon nanotubes (BCNTs) with various boron doping atomic percentages (0.40-3.92 at%) are synthesized and used as a electrocatalyst on the counter electrode (CE) of dye-sensitized solar cells (DSSCs) for investigating the effect of boron doping on carbon materials. A solar-to-electricity conversion efficiency (η) of 7.17 ± 0.11% is achieved for a DSSC with a CE containing BCNTs with optimized B doping concentration (BCNT-0.40 at%), which is higher than that of the cells with CEs consisting of pristine carbon nanotubes (CNT, η = 5.98 ± 0.20%) and is comparable to that of the cell with a Pt CE (η = 7.98 ± 0.05%). It is also noteworthy from a practical viewpoint that the developed atmospheric-pressure synthesis method for synthesizing BCNT is amenable to industrial-scale production since a requirement for vacuum system can be avoided.

  1. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  2. Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

    NARCIS (Netherlands)

    Jin, J.W.; Nathan, A.; Barquinha, P.; Pereira, L.; Fortunato, E.; Martins, R.; Cobb, B.

    2016-01-01

    Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We

  3. Application of carbon nanotubes in perovskite solar cells: A review

    Science.gov (United States)

    Oo, Thet Tin; Debnath, Sujan

    2017-11-01

    Solar power, as alternative renewable energy source, has gained momentum in global energy generation in recent time. Solar photovoltaics (PV) systems now fulfill a significant portion of electricity demand and the capacity of solar PV capacity is growing every year. PV cells efficiency has improved significantly following decades of research, evolving into third generations of PV cells. These third generation PV cells are set out to provide low-cost and efficient PV systems, further improving the commercial competitiveness of solar energy generation. Among these latest generations of PV cells, perovskite solar cells have gained attraction due to the simple manufacturing process and the immense growth in PV efficiency in a short period of research and development. Despite these advantages, perovskite solar cells are known for the weak stability and decomposition in exposure to humidity and high temperature, hindering the possibility of commercialization. This paper will discuss the role of carbon nanotubes (CNTs) in improving the efficiency and stability of perovskite solar cells, in various components such as perovskite layer and hole transport layer, as well as the application of CNTs in unique aspects. These includes the use of CNTs fiber in making the perovskite solar cells flexible, as well as simplification of perovskite PV production by using CNT flash evaporation printing process. Despite these advances, challenges remain in incorporation CNTs into perovskite such as lower conversion efficiency compared to rare earth metals and improvements need to be made. Thus, the paper will be also highlighting the CNTs materials suggested for further research and improvement of perovskite solar cells.

  4. Energy Conversion: Nano Solar Cell

    Science.gov (United States)

    Yahaya, Muhammad; Yap, Chi Chin; Mat Salleh, Muhamad

    2009-09-01

    Problems of fossil-fuel-induced climate change have sparked a demand for sustainable energy supply for all sectors of economy. Most laboratories continue to search for new materials and new technique to generate clean energy at affordable cost. Nanotechnology can play a major role in solving the energy problem. The prospect for solar energy using Si-based technology is not encouraging. Si photovoltaics can produce electricity at 20-30 c//kWhr with about 25% efficiency. Nanoparticles have a strong capacity to absorb light and generate more electrons for current as discovered in the recent work of organic and dye-sensitized cell. Using cheap preparation technique such as screen-printing and self-assembly growth, organic cells shows a strong potential for commercialization. Thin Films research group at National University Malaysia has been actively involved in these areas, and in this seminar, we will present a review works on nanomaterials for solar cells and particularly on hybrid organic solar cell based on ZnO nanorod arrays. The organic layer consisting of poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) and [6, 6]-phenyl C61-butyric acid 3-ethylthiophene ester (PCBE) was spin-coated on ZnO nanorod arrays. ZnO nanorod arrays were grown on FTO glass substrates which were pre-coated with ZnO nanoparticles using a low temperature chemical solution method. A gold electrode was used as the top contact. The device gave a short circuit current density of 2.49×10-4 mA/cm2 and an open circuit voltage of 0.45 V under illumination of a projector halogen light at 100 mW/cm2.

  5. Metal oxides for optoelectronic applications

    Science.gov (United States)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  6. Improvement of multicrystalline silicon wafer solar cells by post ...

    Indian Academy of Sciences (India)

    Administrator

    1Silicon Technology Unit (UDTS), 02 Bd Frantz Fanon, BP. 140, Alger-7 Merveilles, Algiers, Algeria. 2Houari Boumediene University of Science and Technology (USTHB), Bab Ezzouar, Algiers, Algeria. 3SSN-Research Centre, Rajiv ... ally, for solar cells metallization a standard screen print- ing process is applied. Initially ...

  7. Repair of defects in photoactive layer of organic solar cells

    NARCIS (Netherlands)

    Oostra, A.J.; Blom, P.W.M.; Michels, J.J.

    2015-01-01

    Defects occurring during printing of the photoactive layer in organic solar cells lead to short-circuits due to direct contact between the PEDOT:PSS anode and metallic cathode. We provide a highly effective repair method where the defected zone with bare PEDOT:PSS is treated with aqueous sodium

  8. Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

    2001-01-01

    We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

  9. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  10. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum [Palo Alto, CA; Kim, Taeseok [San Jose, CA; Smith, David D [Campbell, CA; Cousins, Peter J [Menlo Park, CA

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  11. Solar Cells Using Quantum Funnels

    KAUST Repository

    Kramer, Illan J.

    2011-09-14

    Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems. © 2011 American Chemical Society.

  12. Device operation of organic tandem solar cells

    NARCIS (Netherlands)

    Hadipour, A.; de Boer, B.; Blom, P. W. M.

    2008-01-01

    A generalized methodology is developed to obtain the current-voltage characteristic of polymer tandem solar cells by knowing the electrical performance of both sub cells. We demonstrate that the electrical characteristics of polymer tandem solar cells are correctly predicted for both the series and

  13. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  14. Theoretical investigation on heterojunction solar cell

    International Nuclear Information System (INIS)

    Prema, K.; Geetha, K.

    1986-11-01

    The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

  15. Nanostructured organic and hybrid solar cells.

    Science.gov (United States)

    Weickert, Jonas; Dunbar, Ricky B; Hesse, Holger C; Wiedemann, Wolfgang; Schmidt-Mende, Lukas

    2011-04-26

    This Progress Report highlights recent developments in nanostructured organic and hybrid solar cells. The authors discuss novel approaches to control the film morphology in fully organic solar cells and the design of nanostructured hybrid solar cells. The motivation and recent results concerning fabrication and effects on device physics are emphasized. The aim of this review is not to give a summary of all recent results in organic and hybrid solar cells, but rather to focus on the fabrication, device physics, and light trapping properties of nanostructured organic and hybrid devices. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Machine for welding solar cell connections

    Energy Technology Data Exchange (ETDEWEB)

    Lorans, D.Y.

    1977-08-09

    A machine for welding a connection wire over a solar cell electrode is described which comprises a base, a welding mount for the solar cell which is supported on the base, means for holding the solar cell on the welding mount, welding electrodes, means to lower the welding electrodes over the solar cell and the connection wire superimposed thereon, means for applying electric current pulses to said welding electrodes. It is characterized by the fact that it further comprises means for imparting to said mount an alternating transverse movement in relation to said base before and during the welding operation.

  17. P3HT-based nanoarchitectural Fano solar cells.

    Science.gov (United States)

    Liao, Wen-Pin; Su, Yen-Hsun; Huang, Yun-Kai; Yeh, Chen-Sheng; Huang, Li-Wen; Wu, Jih-Jen

    2014-10-22

    The finite difference time domain simulation shows the existence of an asymmetric quadrupole of Fano resonance on the surface of a gold-silica core-shell (Au@silica) nanoparticle (NP) as being incorporated into the metal oxide nanoarchitecture/P3HT hybrid. Compared to the metal oxide nanoarchitecture/P3HT hybrid solar cell, a 30% enrichment of the short-circuit current density (Jsc) is attained in the P3HT-based nanoarchitectural Fano solar cell with the Au@silica NPs. The enhancement of charge separation in the cell by the electric field of the Fano resonance is directly evidenced by time-resolved photoluminescence measurements. The increase of the degree of P3HT order in the hybrid by the incorporation of Au@silica NPs into the hybrid active layer may also contribute to the enhancement in the Jsc. Charge carrier dynamic measurements show that an electron collection efficiency of ∼97% can be maintained in the P3HT-based nanoarchitectural Fano solar cell. Significant improvement of the efficiency of the inverted metal oxide/P3HT hybrid solar cell is therefore achieved.

  18. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  19. Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

  20. Advances in Dilute Nitride Multi-Junction Solar Cells for Space Power Applications

    Directory of Open Access Journals (Sweden)

    Suarez F.

    2017-01-01

    In this paper, we review the latest performance and qualification results of Solar Junction Corp.’s lattice matched 4J-on-Ge space solar cells and CIC (Cell- Interconnect-Coverglass products incorporating GaInNAsSb dilute nitride material. We also report on the production readiness of these advanced space solar cells manufactured using an optimized hybrid Molecular Beam Epitaxy (MBE / Metal Organic Vapor Phase Epitaxy (MOVPE growth process.

  1. All-Solution-Processed, Ambient Method for ITO-Free, Roll-Coated Tandem Polymer Solar Cells using Solution- Processed Metal Films

    DEFF Research Database (Denmark)

    Angmo, Dechan; Dam, Henrik Friis; Andersen, Thomas Rieks

    2014-01-01

    A solution-processed silver film is employed in the processing of top-illuminated indium-tin-oxide (ITO)-free polymer solar cells in single- and double-junction (tandem) structures. The nontransparent silver film fully covers the substrate and serves as the bottom electrode whereas a PEDOT......:PSS/Ag grid forms the semitransparent top electrode. All layers are roll-coated/printed on a flexible substrate by using only two techniques: slot–die coating for up to 11 consecutive layers and flexo-printing for the last Ag grid layer. The slot–die coated Ag film is compared to an evaporated Ag film...... in terms of surface morphological and topographical properties and to ITO in terms of flexibility. The slot–die coated Ag film demonstrates extremely low roughness (a root-meansquare roughness of 3 nm was measured over 240_320 mm2 area), is highly conductive (

  2. Light harvesting enhancement in solar cells with quasicrystalline plasmonic structures.

    Science.gov (United States)

    Bauer, Christina; Giessen, Harald

    2013-05-06

    Solar cells are important in the area of renewable energies. Since it is expensive to produce solar-grade silicon [Electrochem. Soc. Interface 17, 30 (2008)], especially thin-film solar cells are interesting. However, the efficiency of such solar cells is low. Therefore, it is important to increase the efficiency. The group of Polman has shown that a periodic arrangement of metal particles is able to enhance the absorbance of light [Nano Lett. 11, 1760 (2011)]. However, a quasicrystalline arrangement of the metal particles is expected to enhance the light absorbance independent of the incident polar and azimuthal angles due to the more isotropic photonic bandstructure. In this paper, we compare the absorption enhancement of a quasiperiodic photonic crystal to that of a periodic photonic crystal. We indeed find that the absorption enhancement for the quasicrystalline arrangement shows such an isotropic behavior. This implies that the absorption efficiency of the solar cell is relatively constant during the course of the day as well as the year. This is particularly important with respect to power distribution, power storage requirements, and the stability of the electric grid upon massive use of renewable energy.

  3. The Impact of parasitic loss on solar cells with plasmonic nano-textured rear reflectors.

    Science.gov (United States)

    Disney, Claire E R; Pillai, Supriya; Green, Martin A

    2017-10-09

    Significant photocurrent enhancement has been demonstrated using plasmonic light-trapping structures comprising nanostructured metallic features at the rear of the cell. These structures have conversely been identified as suffering heightened parasitic absorption into the metal at certain resonant wavelengths severely mitigating benefits of light trapping. In this study, we undertook simulations exploring the relationship between enhanced absorption into the solar cell, and parasitic losses in the metal. These simulations reveal that resonant wavelengths associated with high parasitic losses in the metal could also be associated with high absorption enhancement in the solar cell. We identify mechanisms linking these parasitic losses and absorption enhancements, but found that by ensuring correct design, the light trapping structures will have a positive impact on the overall solar cell performance. Our results clearly show that the large angle scattering provided by the plasmonic nanostructures is the reason for the enhanced absorption observed in the solar cells.

  4. Monolithic cells for solar fuels.

    Science.gov (United States)

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-07

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  5. Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.

    Science.gov (United States)

    Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H

    2015-07-16

    Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV).

  6. Achieving 15% Tandem Polymer Solar Cells

    Science.gov (United States)

    2015-06-23

    final support also enabled us to explore novel hybrid perovskite solar cells in depth. For example, single junction cell efficiency of 19.3% under...novel hybrid perovskite solar cells in depth. For example, single junction cell efficiency of 19.3% under reverse bias was achieved and the results...solar cells with 10.2% power conversion efficiency via stacking two PDTP-DFBT:PC71BM bulk heterojunctions, connected by MoO3/PEDOT:PSS/ ZnO as an

  7. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in

  8. Dye-sensitised solar cell (artificial photosynthesis)

    CSIR Research Space (South Africa)

    Le Roux, Lukas J

    2005-07-01

    Full Text Available A novel system that harnesses solar energy is the nano-crystalline TiO dye-sensitised solar cell (DSC), in conjunction with several new concepts, such as nanotechnology and molecular devices. An efficient and low-cost cell can be produced by using...

  9. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    flexible triple junction, amorphous silicon solar cells. At the Malaysia Energy Centre (MEC), we fabricated triple junction amorphous silicon solar cells (up to 12⋅7% efficiency (Wang et al 2002)) and laser-interconnected modules on steel, glass and polyimide substrates. A major issue encountered is the adhesion of thin film ...

  10. Scaling up ITO-Free solar cells

    NARCIS (Netherlands)

    Galagan, Y.O.; Coenen, E.W.C.; Zimmermann, B.; Slooff, L.H.; Verhees, W.J.H.; Veenstra, S.C.; Kroon, J.M.; Jørgensen, M.; Krebs, F.C.; Andriessen, H.A.J.M.

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm and

  11. 8 COPPER (I) OXIDE (Cu2O) BASED SOLAR CELLS - A REVIEW

    African Journals Online (AJOL)

    DR. AMINU

    ABSTRACT. Copper (I) oxide (Cu2O) is a potential material for the fabrication of low cost solar cells for terrestrial application. A detailed survey on the previous work so far carried out on Cu2O based solar cells has been presented. The aspects discussed include the fabrication of Schottky. (metal/semiconductor) barrier ...

  12. Bifacial aspects of industrial n-Pasha solar cells

    Science.gov (United States)

    Van Aken, Bas B.; Tool, Kees; Kossen, Eric J.; Carr, Anna J.; Janssen, Gaby J. M.; Newman, Bonna K.; Romijn, Ingrid G.

    2017-08-01

    Bifacial photovoltaic (PV) modules make optimal use of diffuse and ground-reflected light. The gain in energy yield depends on both the local climatic conditions and the PV system layout. These determine the additional irradiance on the rear of the PV panels. The rear response of the (laminated) solar cell(s) determines how much additional energy this rear irradiance generates. Based on our experiments and simulations, the main parameters that determine the bifaciality factor of solar cells with a front side junction are the rear metal coverage, the base resistivity and the diffusion profile on the rear. These will be evaluated and discussed in this paper. Front-junction solar cells with low base resistivity have a lower short circuit current when illuminated from the rear due to enhanced recombination in the BSF. Stencil printed rear metallization yields a higher bifaciality factor compared to screen printed by reducing the metal coverage and consumption and maintaining the front side efficiency. For our optimized 239 cm2 bifacial cell we estimate that the output with 20% contributed by the rear side is equivalent to that of a 24.4% efficient monofacial cell.

  13. Predicted solar cell edge radiation effects

    International Nuclear Information System (INIS)

    Gates, M.T.

    1993-01-01

    The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

  14. Fullerene surfactants and their use in polymer solar cells

    Science.gov (United States)

    Jen, Kwan-Yue; Yip, Hin-Lap; Li, Chang-Zhi

    2015-12-15

    Fullerene surfactant compounds useful as interfacial layer in polymer solar cells to enhance solar cell efficiency. Polymer solar cell including a fullerene surfactant-containing interfacial layer intermediate cathode and active layer.

  15. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications)

    Science.gov (United States)

    Vedam, K.; Das, M. B.; Krishnaswamy, S. V.

    1980-02-01

    Emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined showing modular growths under certain conditions. I-V, C-V, and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200 mV V/sub oc/and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metalized with Au.

  16. Organic Based Solar Cells with Morphology Control

    DEFF Research Database (Denmark)

    Andersen, Thomas Rieks

    The field of organic solar cells has in the last years gone through an impressive development with efficiencies reported up to 12 %. For organic solar cells to take the leap from primarily being a laboratory scale technology to being utilized as renewable energy source, several issues need...... Microscopy and as solar cells in a blend with PCBM. It was concluded that these particles did not show a potential large enough for continuous work due to a high material loss and low efficiency when applied in solar cells. The second method to achieve was preparation of pre-arranged morphology organic...... nanoparticles consisting of a blend of donor and acceptor in an aqueous dispersion, thereby addressing two of the issues remaining in the field of organic solar cells. This approach was used on six different polymers, which all had the ability to prepare aqueous nanoparticle inks. The morphology...

  17. High Radiation Resistance IMM Solar Cell

    Science.gov (United States)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  18. Improved CMX solar cell coverglasses and optical solar reflectors

    Science.gov (United States)

    Whalley, A. M.; Jones, D. P.; Dollery, A. A.; Murphy, N.; Porter, D. A.

    Recent development programs have demonstrated that considerable improvements in optical and thermooptical performance as well as mechanical properties of CMX solar cell coverglasses and optical solar reflectors (OSRs) can be achieved. Optical coatings can increase infrared emittance by 4 percent and decrease solar absorptance by 50 percent. Chemical treatments can be used to increase glass strength to four times its untreated value or to provide integral antireflection layers which reduce reflection to 0.5 percent per surface. Automated test equipment for proving the strength of each coverglass and mirror has been designed and manufactured.

  19. Oxide semiconductor thin-film transistors: a review of recent advances.

    Science.gov (United States)

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  20. Coating Processes Boost Performance of Solar Cells

    Science.gov (United States)

    2012-01-01

    NASA currently has spacecraft orbiting Mercury (MESSENGER), imaging the asteroid Vesta (Dawn), roaming the red plains of Mars (the Opportunity rover), and providing a laboratory for humans to advance scientific research in space (the International Space Station, or ISS). The heart of the technology that powers those missions and many others can be held in the palm of your hand - the solar cell. Solar, or photovoltaic (PV), cells are what make up the panels and arrays that draw on the Sun s light to generate electricity for everything from the Hubble Space Telescope s imaging equipment to the life support systems for the ISS. To enable NASA spacecraft to utilize the Sun s energy for exploring destinations as distant as Jupiter, the Agency has invested significant research into improving solar cell design and efficiency. Glenn Research Center has been a national leader in advancing PV technology. The Center s Photovoltaic and Power Technologies Branch has conducted numerous experiments aimed at developing lighter, more efficient solar cells that are less expensive to manufacture. Initiatives like the Forward Technology Solar Cell Experiments I and II in which PV cells developed by NASA and private industry were mounted outside the ISS have tested how various solar technologies perform in the harsh conditions of space. While NASA seeks to improve solar cells for space applications, the results are returning to Earth to benefit the solar energy industry.

  1. Tandem photovoltaic solar cells and increased solar energy conversion efficiency

    Science.gov (United States)

    Loferski, J. J.

    1976-01-01

    Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

  2. Efficiency Improvement of Crystalline Solar Cells: Final Subcontract Report, 1 January 2002 - 30 September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Weber, E. R.

    2007-11-01

    UC-Berkeley study of transition metal related defects in PV-grade mc-Si to understand their pathways into solar cells; chemical state/distribution; interaction with structural defects; defect engineering.

  3. Solar Cell Panel and the Method for Manufacturing the Same

    Science.gov (United States)

    Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

    2016-01-01

    According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

  4. Nanocomposite enables sensitized solar cell

    Science.gov (United States)

    Phuyal, Dibya D.

    Dye Sensitized solar cells (DSSCs) are a promising candidate for next generation photovoltaic panels due to their low cost, easy fabrication process, and relative high efficiency. Despite considerable effort on the advancement of DSSCs, the efficiency has been stalled for nearly a decade due to the complex interplay among various DSSC components. DSSCs consist of a photoanode on a conducting substrate, infiltrated dye for light absorption and electron injection, and an electrolyte to regenerate the dye. On the photoanode is a high band-gap semiconducting material, primarily of a nanostructure morphology of titanium (II) dioxide (TiO2), dye molecules whose molar absorption is typically in the visible spectrum, are adsorbed onto the surface of TiO 2. To improve the current DSSCs, there are many parameters that can be investigated. In a conventional DSSC, a thick semiconducting layer such as the nanoparticle TiO2 layer induces charge separation efficiently while concurrently increasing the charge transport distance, leading the cell to suffer from more charge recombination and deterioration in charge collection efficiency. To improve on this limitation, TiO2 nanowires (NW) and nanotubes (NT) are explored to replace the nanoparticle photoanode. One-dimensional nanostructures are known for the excellent electron transport properties as well as maintaining a relatively high surface area. Hence one of the focuses of this thesis explores at using different morphologies and composition of TiO2 nanostructures to enhance electron collection efficiency. Another challenge in conventional DSSCs is the limit in light absorption of solar irradiation. Dyes are limited to absorption only in the visible range, and have a low molar absorption coefficient in the near infrared (NIR). Tuning dyes is extremely complicated and may have more disadvantages than simply by extending light harvesting. Therefore our strategy is to incorporate quantum dots to replace the dye, as well as prepare a

  5. Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

    International Nuclear Information System (INIS)

    Ťapajna, M; Čičo, K; Kuzmík, J; Fröhlich, K; Pogany, D; Pozzovivo, G; Strasser, G; Carlin, J-F; Grandjean, N

    2009-01-01

    The Ni/Al 2 O 3 /InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance–voltage and capacitance–time characteristics in the temperature range of 25–300 °C. An anomalous positive voltage shift of the capacitance–voltage curve with increasing temperature was observed and attributed to the hole emission from the oxide/semiconductor interface states. Distribution of the interface states density, D it (E), at the Al 2 O 3 /InAlN interface was evaluated using a modification of the constant-capacitance deep-level transient spectroscopy. The MOS-H capacitor threshold voltage shift under negative bias was repetitively recorded as a function of time at elevated temperatures. D it in the range of 0.1–3 × 10 13 eV −1 cm −2 was determined

  6. Recent Advances in Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Thomas Kietzke

    2007-01-01

    Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

  7. Rose bengal-sensitized nanocrystalline ceria photoanode for dye ...

    Indian Academy of Sciences (India)

    Rose bengal-sensitized nanocrystalline ceria photoanode for dye-sensitized solar cell application ... injection and transportation, wide bandgap nanostructured metal oxide semiconductors with dye adsorption surface and higher electron mobility are essential properties for photoanode in dyesensitizedsolar cells (DSSCs).

  8. Recent advances in plasmonic dye-sensitized solar cells

    Science.gov (United States)

    Rho, Won-Yeop; Song, Da Hyun; Yang, Hwa-Young; Kim, Ho-Sub; Son, Byung Sung; Suh, Jung Sang; Jun, Bong-Hyun

    2018-02-01

    Dye-sensitized solar cells (DSSCs) are among the best devices in generating electrons from solar light energy due to their high efficiency, low-cost in processing and transparency in building integrated photovoltaics. There are several ways to improve their energy-conversion efficiency, such as increasing light harvesting and electron transport, of which plasmon and 3-dimensional nanostructures are greatly capable. We review recent advances in plasmonic effects which depend on optimizing sizes, shapes, alloy compositions and integration of metal nanoparticles. Different methods to integrate metal nanoparticles into 3-dimensional nanostructures are also discussed. This review presents a guideline for enhancing the energy-conversion efficiency of DSSCs by utilizing metal nanoparticles that are incorporated into 3-dimensional nanostructures.

  9. Metal-free polymer/MWCNT composite fiber as an efficient counter electrode in fiber shape dye-sensitized solar cells

    Science.gov (United States)

    Ali, Abid; Mujtaba Shah, Syed; Bozar, Sinem; Kazici, Mehmet; Keskin, Bahadır; Kaleli, Murat; Akyürekli, Salih; Günes, Serap

    2016-09-01

    Highly aligned multiwall carbon nanotubes (MWCNT) as fiber were modified with a conducting polymer via a simple dip coating method. Modified MWCNT exhibited admirable improvement in electrocatalytic activity for the reduction of tri-iodide in dye sensitized solar cells. Scanning electron microscopy images confirm the successful deposition of polymer on MWCNT. Cyclic voltammetry, square wave voltammetry and electrochemical impedance spectroscopy studies were carried out to investigate the inner mechanism for the charge transfer behaviour. Results from bare and modified electrodes revealed that the MWCNT/(poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) composite electrode is much better at catalysing the {{{{I}}}3}-/{{{I}}}- redox couple compared to the pristine fiber electrode. The photoelectric conversion efficiency of 5.03% for the modified MWCNT electrodes was comparable with that of the conventional Pt-based electrode. The scientific results of this study reveal that MWCNT/PEDOT:PSS may be a better choice for the replacement of cost intensive electrode materials such as platinum. Good performance even after bending up to 90° and in-series connection to enhance the output voltage were also successfully achieved, highlighting the practical application of this novel device.

  10. Post-assembly atomic layer deposition of ultrathin metal-oxide coatings enhances the performance of an organic dye-sensitized solar cell by suppressing dye aggregation.

    Science.gov (United States)

    Son, Ho-Jin; Kim, Chul Hoon; Kim, Dong Wook; Jeong, Nak Cheon; Prasittichai, Chaiya; Luo, Langli; Wu, Jinsong; Farha, Omar K; Wasielewski, Michael R; Hupp, Joseph T

    2015-03-11

    Dye aggregation and concomitant reduction of dye excited-state lifetimes and electron-injection yields constitute a significant mechanism for diminution of light-to-electrical energy conversion efficiencies in many dye-sensitized solar cells (DSCs). For TiO2-based DSCs prepared with an archetypal donor-acceptor organic dye, (E)-2-cyano-3-(5'-(5''-(p-(diphenylamino)phenyl)-thiophen-2''-yl)thiophen-2'-yl)acrylic acid (OrgD), we find, in part via ultrafast spectroscopy measurements, that postdye-adsorption atomic layer deposition (ALD) of ultrathin layers of either TiO2 or Al2O3 effectively reverses residual aggregation. Notably, the ALD treatment is significantly more effective than the widely used aggregation-inhibiting coadsorbent, chenodeoxycholic acid. Primarily because of reversal of OrgD aggregation, and resulting improved injection yields, ALD post-treatment engenders a 30+% increase in overall energy conversion efficiency. A secondary contributor to increased currents and efficiencies is an ALD-induced attenuation of the rate of interception of injected electrons, resulting in slightly more efficient charge collection.

  11. Stable and Efficient Organo-Metal Halide Hybrid Perovskite Solar Cells via π-Conjugated Lewis Base Polymer Induced Trap Passivation and Charge Extraction.

    Science.gov (United States)

    Qin, Ping-Li; Yang, Guang; Ren, Zhi-Wei; Cheung, Sin Hang; So, Shu Kong; Chen, Li; Hao, Jianhua; Hou, Jianhui; Li, Gang

    2018-03-01

    High-quality pinhole-free perovskite film with optimal crystalline morphology is critical for achieving high-efficiency and high-stability perovskite solar cells (PSCs). In this study, a p-type π-conjugated polymer poly[(2,6-(4,8-bis(5-(2-ethylhexyl) thiophen-2-yl)-benzo[1,2-b:4,5-b'] dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl) benzo[1',2'-c:4',5'-c'] dithiophene-4,8-dione))] (PBDB-T) is introduced into chlorobenzene to form a facile and effective template-agent during the anti-solvent process of perovskite film formation. The π-conjugated polymer PBDB-T is found to trigger a heterogeneous nucleation over the perovskite precursor film and passivate the trap states of the mixed perovskite film through the formation of Lewis adducts between lead and oxygen atom in PBDB-T. The p-type semiconducting and hydrophobic PBDB-T polymer fills in the perovskite grain boundaries to improve charge transfer for better conductivity and prevent moisture invasion into the perovskite active layers. Consequently, the PSCs with PBDB-T modified anti-solvent processing leads to a high-efficiency close to 20%, and the devices show excellent stability, retaining about 90% of the initial power conversion efficiency after 150 d storage in dry air. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. PEDOT:PSS Films with Metallic Conductivity through a Treatment with Common Organic Solutions of Organic Salts and Their Application as a Transparent Electrode of Polymer Solar Cells.

    Science.gov (United States)

    Yu, Zhimeng; Xia, Yijie; Du, Donghe; Ouyang, Jianyong

    2016-05-11

    A transparent electrode is an indispensable component of optoelectronic devices, and there as been a search for substitutes of indium tin oxide (ITO) as the transparent electrode. Poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) ( PSS) is a conducting polymer that is very promising as the next generation of materials for the transparent electrode if it can obtain conductivity as high as that of ITO. Here, we report the treatment of PSS with organic solutions to significantly enhance its conductivity. Common organic solvents like dimethylformamide and γ-butyrolactone and common organic salts like methylammonium iodide and methylammonium bromide are used for the organic solutions. The conductivity of pristine PSS films is only ∼0.2 S/cm, and it can be increased to higher than 2100 S/cm. The conductivity enhancement is much more significant than control treatments of PSS films with neat organic solvents or aqueous solutions of the organic salts. The mechanism for the conductivity enhancement is the synergetic effects of both the organic salts and organic solvents on the microstructure and composition of PSS. They induce the segregation of some PSSH chains from PSS. Highly conductive PSS films were studied as the transparent electrode of polymer solar cells. The photovoltaic efficiency is comparable to that with an ITO transparent electrode.

  13. High-efficiency solar cell and method for fabrication

    Science.gov (United States)

    Hou, Hong Q.; Reinhardt, Kitt C.

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  14. Graphene and Graphene-like Molecules: Prospects in Solar Cells.

    Science.gov (United States)

    Loh, Kian Ping; Tong, Shi Wun; Wu, Jishan

    2016-02-03

    Graphene is constantly hyped as a game-changer for flexible transparent displays. However, to date, no solar cell fabricated on graphene electrodes has out-performed indium tin oxide in power conversion efficiency (PCE). This Perspective covers the enabling roles that graphene can play in solar cells because of its unique properties. Compared to transparent and conducting metal oxides, graphene may not have competitive advantages in terms of its electrical conductivity. The unique strength of graphene lies in its ability to perform various enabling roles in solar cell architectures, leading to overall improvement in PCE. Graphene can serve as an ultrathin and transparent diffusion barrier in solar cell contacts, as an intermediate layer in tandem solar cells, as an electron acceptor, etc. Inspired by the properties of graphene, chemists are also designing graphene-like molecules in which the topology of π-electron array, donor-acceptor structures, and conformation can be tuned to offer a new class of light-harvesting materials.

  15. Counter electrodes in dye-sensitized solar cells.

    Science.gov (United States)

    Wu, Jihuai; Lan, Zhang; Lin, Jianming; Huang, Miaoliang; Huang, Yunfang; Fan, Leqing; Luo, Genggeng; Lin, Yu; Xie, Yimin; Wei, Yuelin

    2017-10-02

    Dye-sensitized solar cells (DSSCs) are regarded as prospective solar cells for the next generation of photovoltaic technologies and have become research hotspots in the PV field. The counter electrode, as a crucial component of DSSCs, collects electrons from the external circuit and catalyzes the redox reduction in the electrolyte, which has a significant influence on the photovoltaic performance, long-term stability and cost of the devices. Solar cells, dye-sensitized solar cells, as well as the structure, principle, preparation and characterization of counter electrodes are mentioned in the introduction section. The next six sections discuss the counter electrodes based on transparency and flexibility, metals and alloys, carbon materials, conductive polymers, transition metal compounds, and hybrids, respectively. The special features and performance, advantages and disadvantages, preparation, characterization, mechanisms, important events and development histories of various counter electrodes are presented. In the eighth section, the development of counter electrodes is summarized with an outlook. This article panoramically reviews the counter electrodes in DSSCs, which is of great significance for enhancing the development levels of DSSCs and other photoelectrochemical devices.

  16. Resource recovery of scrap silicon solar battery cell.

    Science.gov (United States)

    Lee, Ching-Hwa; Hung, Chi-En; Tsai, Shang-Lin; Popuri, Srinivasa R; Liao, Ching-Hua

    2013-05-01

    In order to minimize pollution problems and to conserve limited natural resources, a hydrometallurgical procedure was developed in this study to recover the valuable resources of silicon (Si), silver (Ag) and aluminum (Al) from scrap silicon solar battery cells. In this study, several methods of leaching, crystallization, precipitation, electrolysis and replacement were employed to investigate the recovery efficiency of Ag and Al from defective monocrystalline silicon solar battery cells. The defective solar battery cells were ground into powder followed by composition analysis with inductively coupled plasma-atomic emission spectrometry. The target metals Ag and Al weight percentage were found to be 1.67 and 7.68 respectively. A leaching process was adopted with nitric acid (HNO3), hydrochloric acid, sulfuric acid (H2SO4) and sodium hydroxide as leaching reagent to recover Ag and Al from a ground solar battery cell. Aluminum was leached 100% with 18N H2SO4 at 70°C and Ag was leached 100% with 6N HNO3. Pure Si of 100% was achieved from the leaching solution after the recovery of Ag and Al, and was analyzed by scanning electron microscope-energy dispersive spectroscopy. Aluminum was recovered by crystallization process and silver was recovered by precipitation, electrolysis and replacement processes. These processes were applied successfully in the recovery of valuable metal Ag of 98-100%.

  17. Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

    Science.gov (United States)

    Wang, Shu-Yi

    To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

  18. Characterising dye-sensitized solar cells

    Science.gov (United States)

    Tobin, Laura L.; O'Reilly, Thomas; Zerulla, Dominic; Sheridan, John T.

    2009-08-01

    With growing energy and environmental concerns due to fossil fuel depletion and global warming there is an increasing attention being attracted by alternative and/or renewable sources of power such as biomass, hydropower, geothermal, wind and solar energy. In today's society there is a vast and in many cases not fully appreciated dependence on electrical power for everyday life and therefore devices such as PV cells are of enormous importance. The more widely used and commercially available silicon (semiconductor) based cells currently have the greatest efficiencies, however the manufacturing of these cells is complex and costly due to the cost and difficulty of producing and processing pure silicon. One new direction being explored is the development of dye-sensitised solar cells (DSSC). The SFI Strategic Research Centre for Solar Energy Conversion is a new research cluster based in Ireland, formed with the express intention of bringing together industry and academia to produce renewable energy solutions. Our specific area of research is in biomimetic dye sensitised solar cells and their electrical properties. We are currently working to develop test equipment, and optoelectronic models describing the performance and behaviors of dye-sensitised solar cells (Grätzel Cells). In this paper we describe some of the background to our work and also some of our initial experimental results. Based on these results we intend to characterise the opto-electrical properties and bulk characteristics of simple dye-sensitised solar cells and then to proceed to test new cell compositions.

  19. Solar-to-Chemical Energy Conversion with Photoelectrochemical Tandem Cells.

    Science.gov (United States)

    Sivula, Kevin

    2013-01-01

    Efficiently and inexpensively converting solar energy into chemical fuels is an important goal towards a sustainable energy economy. An integrated tandem cell approach could reasonably convert over 20% of the sun's energy directly into chemical fuels like H2 via water splitting. Many different systems have been investigated using various combinations of photovoltaic cells and photoelectrodes, but in order to be economically competitive with the production of H2 from fossil fuels, a practical water splitting tandem cell must optimize cost, longevity and performance. In this short review, the practical aspects of solar fuel production are considered from the perspective of a semiconductor-based tandem cell and the latest advances with a very promising technology - metal oxide photoelectrochemical tandem cells - are presented.

  20. Solar cells based on gallium antimonide

    International Nuclear Information System (INIS)

    Andreev, V. M.; Sorokina, S. V.; Timoshina, N. Kh.; Khvostikov, V. P.; Shvarts, M. Z.

    2009-01-01

    Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is η = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum).