Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

Chemically abrupt interface between Ce oxide and Fe films

International Nuclear Information System (INIS)

Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

2005-01-01

A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Mesoporous metal oxides and processes for preparation thereof

Energy Technology Data Exchange (ETDEWEB)

Suib, Steven L.; Poyraz, Altug Suleyman

2018-03-06

A process for preparing a mesoporous metal oxide, i.e., transition metal oxide. Lanthanide metal oxide, a post-transition metal oxide and metalloid oxide. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous metal oxide. A mesoporous metal oxide prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous metal oxides. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous metal oxides. Mesoporous metal oxides and a method of tuning structural properties of mesoporous metal oxides.

Metal oxide nanorod arrays on monolithic substrates

Energy Technology Data Exchange (ETDEWEB)

Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

2018-01-02

A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

Symmetry-induced deformation and reconstructive phase transformation in metal-oxide interface: the Fe (001) example

International Nuclear Information System (INIS)

Lahoche, L.; Universite de Technologie de Compiegne; Lorman, V.; Roelandt, J.M.; Rochal, S.B.

1996-01-01

A model is proposed for the structural transformation and corresponding induced deformation in physical three-dimensional interface of the metal-oxide system. The thermodynamical and elastic state of the system is described by the Landau-Ginzbourg free energy. Calculated theoretical phase diagram shows several different types of isothermal growth processes. The model is applied to the case of the oxidation of the (001) Fe surface. (orig.)

Dynamic Stabilization of Metal Oxide–Water Interfaces

Energy Technology Data Exchange (ETDEWEB)

McBriarty, Martin E.; von Rudorff, Guido Falk; Stubbs, Joanne; Eng, Peter; Blumberger, Jochen; Rosso, Kevin M.

2017-02-08

Metal oxide growth, dissolution, and redox reactivity depend on the structure and dynamics at the interface with aqueous solution. We present the most definitive analysis to date of the hydrated naturally abundant r-cut (11$\\bar{0}$2) termination of the iron oxide hematite (α-Fe₂O₃). In situ synchrotron X-ray scattering analysis reveals a ridged lateral arrangement of adsorbed water molecules hydrogen bonded to terminal aquo groups. Large-scale hybrid-functional density functional theory-based molecular dynamics (DFT-MD) simulations show how this structure is dynamically stabilized by picosecond exchange between aquo groups and adsorbed water, even under nominally dry conditions. Surface pKa prediction based on bond valence analysis suggests that water exchange may influence the proton transfer reactions associated with acid/base reactivity at the interface. Our findings rectify inconsistencies between existing models and may be extended to resolving more complex electrochemical phenomena at metal oxide-water interfaces.

Finite element modelling of the oxidation kinetics of Zircaloy-4 with a controlled metal-oxide interface and the influence of growth stress

International Nuclear Information System (INIS)

Zumpicchiat, Guillaume; Pascal, Serge; Tupin, Marc; Berdin-Méric, Clotilde

2015-01-01

Highlights: We developed two finite element models of zirconium-based alloy oxidation using the CEA Cast3M code to simulate the oxidation kinetics of Zircaloy-4: the diffuse interface model and the sharp interface model. We also studied the effect of stresses on the oxidation kinetics. The main results are: • Both models lead to parabolic oxidation kinetics in agreement with the Wagner’s theory. • The modellings enable to calculate the stress distribution in the oxide as well as in the metal. • A strong effect of the hydrostatic stress on the oxidation kinetics has been evidenced. • The stress gradient effect changes the parabolic kinetics into a sub-parabolic law closer to the experimental kinetics because of the stress gradient itself, but also because of the growth stress increase with the oxide thickness. - Abstract: Experimentally, zirconium-based alloys oxidation kinetics is sub-parabolic, by contrast with the Wagner theory which predicts a parabolic kinetics. Two finite element models have been developed to simulate this phenomenon: the diffuse interface model and the sharp interface model. Both simulate parabolic oxidation kinetics. The growth stress effects on oxygen diffusion are studied to try to explain the gap between theory and experience. Taking into account the influence of the hydrostatic stress and its gradient into the oxygen flux expression, sub-parabolic oxidation kinetics have been simulated. The sub-parabolic behaviour of the oxidation kinetics can be explained by a non-uniform compressive stress level into the oxide layer.

Unified computational model of transport in metal-insulating oxide-metal systems

Science.gov (United States)

Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

2018-04-01

A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

Oxidation-Mediated Fingering in Liquid Metals

Science.gov (United States)

Eaker, Collin B.; Hight, David C.; O'Regan, John D.; Dickey, Michael D.; Daniels, Karen E.

2017-10-01

We identify and characterize a new class of fingering instabilities in liquid metals; these instabilities are unexpected due to the large interfacial tension of metals. Electrochemical oxidation lowers the effective interfacial tension of a gallium-based liquid metal alloy to values approaching zero, thereby inducing drastic shape changes, including the formation of fractals. The measured fractal dimension (D =1.3 ±0.05 ) places the instability in a different universality class than other fingering instabilities. By characterizing changes in morphology and dynamics as a function of droplet volume and applied electric potential, we identify the three main forces involved in this process: interfacial tension, gravity, and oxidative stress. Importantly, we find that electrochemical oxidation can generate compressive interfacial forces that oppose the tensile forces at a liquid interface. The surface oxide layer ultimately provides a physical and electrochemical barrier that halts the instabilities at larger positive potentials. Controlling the competition between interfacial tension and oxidative (compressive) stresses at the interface is important for the development of reconfigurable electronic, electromagnetic, and optical devices that take advantage of the metallic properties of liquid metals.

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

2014-06-30

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Analysis of polymer/oxide interfaces under ambient conditions - An experimental perspective

Science.gov (United States)

González-Orive, A.; Giner, I.; de los Arcos, T.; Keller, A.; Grundmeier, G.

2018-06-01

In many different hybrid materials and materials composites polymers adhere to bulk oxides or oxide covered metal. The formed polymer/oxide interfaces are of crucial importance for the functionality and durability of such complex materials. Especially, under humid and corrosive conditions such interfaces tend to degrade due to permeability of polymers for water, the high adsorption energy of water on oxide surfaces and even corrosion processes of the metal. Different experimental studies considered such interfaces ranging from spectroscopy to electrochemical analysis. However, it is still a challenge to understand the complex interaction especially under non-ideal ambient conditions. The perspective article presents an overview on the existing experimental approaches and considers most recent experimental developments with regard to their potential applications in the area of polymer/oxide interfaces in the future.

Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

International Nuclear Information System (INIS)

Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

2012-01-01

Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

From Two-Phase to Three-Phase: The New Electrochemical Interface by Oxide Electrocatalysts

Science.gov (United States)

Xu, Zhichuan J.

2018-03-01

Electrochemical reactions typically occur at the interface between a solid electrode and a liquid electrolyte. The charge exchange behaviour between these two phases determines the kinetics of electrochemical reactions. In the past few years, significant advances have been made in the development of metal oxide electrocatalysts for fuel cell and electrolyser reactions. However, considerable gaps remain in the fundamental understanding of the charge transfer pathways and the interaction between the metal oxides and the conducting substrate on which they are located. In particular, the electrochemical interfaces of metal oxides are significantly different from the traditional (metal) ones, where only a conductive solid electrode and a liquid electrolyte are considered. Oxides are insulating and have to be combined with carbon as a conductive mediator. This electrode configuration results in a three-phase electrochemical interface, consisting of the insulating oxide, the conductive carbon, and the liquid electrolyte. To date, the mechanistic insights into this kind of non-traditional electrochemical interface remain unclear. Consequently conventional electrochemistry concepts, established on classical electrode materials and their two-phase interfaces, are facing challenges when employed for explaining these new electrode materials. [Figure not available: see fulltext.

Microarray study of temperature-dependent sensitivity and selectivity of metal/oxide sensing interfaces

Science.gov (United States)

Tiffany, Jason; Cavicchi, Richard E.; Semancik, Stephen

2001-02-01

Conductometric gas microsensors offer the benefits of ppm-level sensitivity, real-time data, simple interfacing to electronics hardware, and low power consumption. The type of device we have been exploring consists of a sensor film deposited on a "microhotplate"- a 100 micron platform with built-in heating (to activate reactions on the sensing surface) and thermometry. We have been using combinatorial studies of 36-element arrays to characterize the relationship between sensor film composition, operating temperature, and response, as measured by the device's sensitivity and selectivity. Gases that have been tested on these arrays include methanol, ethanol, dichloromethane, propane, methane, acetone, benzene, hydrogen, and carbon monoxide, and are of interest in the management of environmental waste sites. These experiments compare tin oxide films modified by catalyst overlayers, and ultrathin metal seed layers. The seed layers are used as part of a chemical vapor deposition process that uses each array element's microheater to activate the deposition of SnO2, and control its microstructure. Low coverage (20 Ê) catalytic metals (Pd, Cu, Cr, In, Au) are deposited on the oxides by masked evaporation or sputtering. This presentation demonstrates the value of an array-based approach for developing film processing methods, measuring performance characteristics, and establishing reproducibility. It also illustrates how temperature-dependent response data for varied metal/oxide compositions can be used to tailor a microsensor array for a given application.

Nanostructure-Directed Chemical Sensing: The IHSAB Principle and the Effect of Nitrogen and Sulfur Functionalization on Metal Oxide Decorated Interface Response

Directory of Open Access Journals (Sweden)

James L. Gole

2013-08-01

Full Text Available The response matrix, as metal oxide nanostructure decorated n-type semiconductor interfaces are modified in situ through direct amination and through treatment with organic sulfides and thiols, is demonstrated. Nanostructured TiO2, SnOx, NiO and CuxO (x = 1,2, in order of decreasing Lewis acidity, are deposited to a porous silicon interface to direct a dominant electron transduction process for reversible chemical sensing in the absence of significant chemical bond formation. The metal oxide sensing sites can be modified to decrease their Lewis acidity in a process appearing to substitute nitrogen or sulfur, providing a weak interaction to form the oxynitrides and oxysulfides. Treatment with triethylamine and diethyl sulfide decreases the Lewis acidity of the metal oxide sites. Treatment with acidic ethane thiol modifies the sensor response in an opposite sense, suggesting that there are thiol (SH groups present on the surface that provide a Brønsted acidity to the surface. The in situ modification of the metal oxides deposited to the interface changes the reversible interaction with the analytes, NH3 and NO. The observed change for either the more basic oxynitrides or oxysulfides or the apparent Brønsted acid sites produced from the interaction of the thiols do not represent a simple increase in surface basicity or acidity, but appear to involve a change in molecular electronic structure, which is well explained using the recently developed inverse hard and soft acids and bases (IHSAB model.

Nature of the metal-support interface in supported metal catalysts: results from x-ray absorption spectroscopy

NARCIS (Netherlands)

Koningsberger, D.C.; Gates, B.C.

1992-01-01

X-ray absorption spectra characterizing the metal-support interface in supported metal complexes and supported metal catalysts are summarized and evaluated with 29 refs. Mononuclear transition metal complexes on non-reducible metal oxide supports are bonded with metal-oxygen bonds of .apprx.2.15

Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance.

Science.gov (United States)

Liang, Zhimin; Su, Mingze; Zhou, Yangyang; Gong, Li; Zhao, Chuanxi; Chen, Keqiu; Xie, Fangyan; Zhang, Weihong; Chen, Jian; Liu, Pengyi; Xie, Weiguang

2015-11-07

The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.

Mesoporous Transition Metal Oxides for Supercapacitors.

Science.gov (United States)

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-10-14

Recently, transition metal oxides, such as ruthenium oxide (RuO₂), manganese dioxide (MnO₂), nickel oxides (NiO) and cobalt oxide (Co₃O₄), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO₂, MnO₂, NiO, Co₃O₄ and nickel cobaltite (NiCo₂O₄), and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

Science.gov (United States)

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Mesoporous Transition Metal Oxides for Supercapacitors

Science.gov (United States)

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-01-01

Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4), and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors. PMID:28347088

Mesoporous Transition Metal Oxides for Supercapacitors

Directory of Open Access Journals (Sweden)

Yan Wang

2015-10-01

Full Text Available Recently, transition metal oxides, such as ruthenium oxide (RuO2, manganese dioxide (MnO2, nickel oxides (NiO and cobalt oxide (Co3O4, have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4, and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors.

Dynamic Stabilization of Metal Oxide–Water Interfaces

Energy Technology Data Exchange (ETDEWEB)

McBriarty, Martin E.; von Rudorff, Guido Falk; Stubbs, Joanne E.; Eng, Peter J.; Blumberger, Jochen; Rosso, Kevin M.

2017-02-08

The interaction of water with metal oxide surfaces plays a crucial role in the catalytic and geochemical behavior of metal oxides. In a vast majority of studies, the interfacial structure is assumed to arise from a relatively static lowest energy configuration of atoms, even at room temperature. Using hematite (α-Fe2O3) as a model oxide, we show through a direct comparison of in situ synchrotron X-ray scattering with density functional theory-based molecular dynamics simulations that the structure of the (1102) termination is dynamically stabilized by picosecond water exchange. Simulations show frequent exchanges between terminal aquo groups and adsorbed water in locations and with partial residence times consistent with experimentally determined atomic sites and fractional occupancies. Frequent water exchange occurs even for an ultrathin adsorbed water film persisting on the surface under a dry atmosphere. The resulting time-averaged interfacial structure consists of a ridged lateral arrangement of adsorbed water molecules hydrogen bonded to terminal aquo groups. Surface pKa prediction based on bond valence analysis suggests that water exchange will influence the proton-transfer reactions underlying the acid/base reactivity at the interface. Our findings provide important new insights for understanding complex interfacial chemical processes at metal oxide–water interfaces.

Optical and electrical experiments at some transition-metal oxide foil-electrolyte interfaces

International Nuclear Information System (INIS)

Sari, S.O.; Ahlgren, W.L.

1977-01-01

Metal-oxide layers formed from transition-metal foils oxidized by heating in air have been examined for their photoelectrolytic response. The metals examined are Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Pt. Weak photoeffects are observed for oxide layers of all of these metals. Sizable light-dependent oxygen gas evolution rates are found in Ti and also in W oxides. The spectral dependence of the oxygen response in these compounds is investigated, and interpretation is given of these experiments

Plasma metallization of aluminium oxide powder

International Nuclear Information System (INIS)

Smirnov, A.I.; Petrunichev, V.A.

1981-01-01

The sintering ability of cermets of metallized granulas of aluminium and matrix materials, such as chromium, nickel and nichrome is studied. Deformation tests of samples of cermets with molybdenum coated granules show satisfactory results at normal and high temperatures without fracture of metall-oxide interfaces [ru

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

OpenAIRE

Ivan Litzov; Christoph J. Brabec

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work fun...

Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

International Nuclear Information System (INIS)

Shaw, L.; Miracle, D.; Abbaschian, R.

1995-01-01

Fracture energies of Al 2 O 3 /Nb interfaces and MoSi 2 /Nb interfaces with and without Al 2 O 3 coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al 2 O 3 /Nb interface was determined to be 9 J/m 2 and changed to 16 J/m 2 when Nb was pre-oxidized before the formation of the Al 2 O 3 /Nb interface. The fracture energy of the MoSi 2 /Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi 2 /Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al 2 O 3 with silicides, MoSi 2 , Nb 5 Si 3 , or (Nb, Mo)Si 2 were estimated to be about 16 J/m 2 , while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces

Positron studies of metal-oxide-semiconductor structures

Science.gov (United States)

Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

1993-03-01

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

Science.gov (United States)

Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Ning, Honglong; Peng, Junbiao

2018-03-11

A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance-voltage characteristics and current-voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson's equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously.

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Weifeng Chen

2018-03-01

Full Text Available A semi-analytical extraction method of interface and bulk density of states (DOS is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs. In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco. As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS simultaneously.

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Energy Technology Data Exchange (ETDEWEB)

Muret, P., E-mail: pierre.muret@neel.cnrs.fr; Traoré, A.; Maréchal, A.; Eon, D. [Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble, France and CNRS, Inst. NEEL, F-38042 Grenoble (France); Pernot, J. [Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, (France); CNRS, Inst. NEEL, F-38042 Grenoble, (France); Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris (France); Pinero, J. C.; Villar, M. P.; Araujo, D., E-mail: daniel.araujo@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2015-11-28

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO{sub 2} deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

Modelling of multicomponent diffusion in a two-phase oxide-metal corium pool by a diffuse interface method

International Nuclear Information System (INIS)

Cardon, Clement

2016-01-01

This Ph.D. topic is focused on the modelling of stratification kinetics for an oxide-metal corium pool (U-O-Zr-steel system) in terms of multicomponent and multiphase diffusion. This work is part of a larger research effort for the development of a detailed corium pool modelling based on a CFD approach for thermal hydraulics. The overall goal is to improve the understanding of the involved phenomena and obtain closure laws for integral macroscopic models. The phase-field method coupled with an energy functional using the CALPHAD method appears to be relevant for this purpose. In a first part, we have developed a diffuse interface model in order to describe the diffusion process in the U-O system. This model has been coupled with a CALPHAD thermodynamic database and its parameterization has been developed with, in particular, an up-scaling procedure related to the interface thickness. Then, within the framework of a modelling for the U-O-Zr ternary system, we have proposed a generalization of the diffuse interface model through an assumption of local equilibrium for redox mechanisms. A particular attention was paid to the model analysis by 1D numerical simulations with a special focus on the steady state composition profiles. Finally we have applied this model to the U-O-Zr-Fe system. For that purpose, we have considered a configuration close to small-scale experimental tests of oxide-metal corium pool stratification. (author) [fr

Defect Engineering and Interface Phenomena in Tin Oxide

KAUST Repository

Albar, Arwa

2017-04-05

The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

Biomimetic synthesis and morphological control of metal carbonates at the air/solution interface

International Nuclear Information System (INIS)

Lee, Shichoon; Cho, Kilwon; Son, Younggon

2012-01-01

Biomimetic approaches can provide a means of fabricating nanostructured materials under environmentally benign conditions. In this paper, we synthesized metal carbonate films, such as calcite, strontianite, malachite, and hydrozincite films, at the air-solution interface of solutions containing corresponding metal ions by using inflowing CO 2 from the atmosphere. The addition of acidic polymers, fulfilling the role of an acidic protein in biomineralization, provided CaCO 3 nanofibers, SrCO 3 nanofibers oriented in a specific direction, and copper carbonate and zinc carbonate hydroxide thin films. The metal carbonates prepared in this study were used as precursors for the formation of metal oxide nanocrystals via pyrolysis. This work showed that various metal carbonates and metal oxides with nanostructures can be prepared by using atmospheric CO 2 . - Highlights: ► Biomimetic synthesis of metal carbonate nanofilms at the air/solution interface. ► The reaction between metal ions and carbonate ions derived from CO 2 in the air. ► Calcium, strontium, copper and zinc carbonates were formed. ► The morphologies of the nanofilms were controlled by adding the acidic polymer. ► Nanostructured metal oxides were prepared by pyrolysis of the metal carbonates.

Interaction phenomena at reactive metal/ceramic interfaces.

Energy Technology Data Exchange (ETDEWEB)

McDeavitt, S. M.; Billings, G. W.; Indacochea, J. E.

2000-11-03

The objective of this study was to understand the interface chemical reactions between stable ceramics and reactive liquid metals, and developing microstructure. Experiments were conducted at elevated temperatures where small metal samples of Zr and Zr-alloy were placed on top of selected oxide and non-oxide ceramic substrates (Y{sub 2}O{sub 3}, ZrN, ZrC, and HfC). The sample stage was heated in high-purity argon to about 2000 C, held in most cases for five minutes at the peak temperature, and then cooled to room temperature at {approximately}20 c/min. An external video camera was used to monitor the in-situ wetting and interface reactions. Post-test examinations of the systems were conducted by scanning electron microscopy and energy dispersive spectroscopy. It was determined that the Zr and the Zr-alloy are very active in the wetting of stable ceramics at elevated temperatures. In addition, in some systems, such as Zr/ZrN, a reactive transition phase formed between the ceramic and the metal. In other systems, such as Zr/Y{sub 2}O{sub 3}, Zr/ZrC and Zr/HfC, no reaction products formed, but a continuous and strong joint developed under these circumstances also.

Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

Directory of Open Access Journals (Sweden)

Kaleem Abbas

2018-03-01

Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

Interface-modulated approach toward multilevel metal oxide nanotubes for lithium-ion batteries and oxygen reduction reaction

Institute of Scientific and Technical Information of China (English)

Jiashen Meng; Chaojiang Niu; Xiong Liu; Ziang Liu; Hongliang Chen; Xuanpeng Wang; Jiantao Li

2016-01-01

Metal oxide hollow structures with multilevel interiors are of great interest for potential applications such as catalysis,chemical sensing,drug delivery,and energy storage.However,the controlled synthesis of multilevel nanotubes remains a great challenge.Here we develop a facile interface-modulated approach toward the synthesis of complex metal oxide multilevel nanotubes with tunable interior structures through electrospinning followed by controlled heat treatment.This versatile strategy can be effectively applied to fabricate wire-in-tube and tubein-tube nanotubes of various metal oxides.These multilevel nanotubes possess a large specific surface area,fast mass transport,good strain accommodation,and high packing density,which are advantageous for lithium-ion batteries (LIBs)and the oxygen reduction reaction (ORR).Specifically,shrinkable CoMn2O4 tube-in-tube nanotubes as a lithium-ion battery anode deliver a high discharge capacity of ～565 mAh.g-1 at a high rate of 2 A.g-1,maintaining 89％ of the latter after 500 cycles.Further,as an oxygen reduction reaction catalyst,these nanotubes also exhibit excellent stability with about 92％ current retention after 30,000 s,which is higher than that of commercial Pt/C (81％).Therefore,this feasible method may push the rapid development of one-dimensional (1D) nanomaterials.These multifunctional nanotubes have great potential in many frontier fields.

Interfaces and nanostructures of oxide octahedral frameworks

Directory of Open Access Journals (Sweden)

Felip eSandiumenge

2014-08-01

Full Text Available In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition metal oxides has fascinated the materials science community. However, the behavior of these materials still elude the current understanding of classical semiconductor and metal epitaxy. The reason for that is rooted in the surprising versatility of linked coordination units to adapt to a dissimilar substrate and the strong sensitivity of correlated oxides to external perturbations. The confluence of atomic control in oxide thin film epitaxy, state of the art high spatial resolution characterization techniques, and electronic structure computations, has allowed in recent years to obtain first insights on the underlying microscopic mechanisms governing the epitaxy of these fascinating materials. Here, we shortly review these mechanisms and highlight their potential in the design of novel nanostructures with enhanced functionalities.

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

Directory of Open Access Journals (Sweden)

H. J. Harsan Ma

2015-08-01

Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

International Nuclear Information System (INIS)

Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

2015-01-01

The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J

2013-12-10

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

Directory of Open Access Journals (Sweden)

Ivan Litzov

2013-12-01

Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J.

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

Method of producing homogeneous mixed metal oxides and metal-metal oxide mixtures

International Nuclear Information System (INIS)

Quinby, T.C.

1980-01-01

A method for preparing particulate metal or metal oxide of controlled partile size comprises contacting an an aqueous solution containing dissolved metal values with excess urea at a temperature sufficient to cause urea to react with water to provide a molten urea solution containing the metal values; heating the molten urea solution to cause the metal values to precipitate, forming a mixture containing precipitated metal values; heating the mixture containing precipitated metal values to evaporate volatile material leaving a dry powder containing said metal values. The dry powder can be calcined to provide particulate metal oxide or reduced to provide particulate metal. Oxide mixtures are provided when the aqueous solution contains values of more than one metal. Homogeneousmetal-metal oxide mistures for preparing cermets can be prepared by selectively reducing at least one of the metal oxides. (auth)

Method of producing homogeneous mixed metal oxides and metal--metal oxide mixtures

International Nuclear Information System (INIS)

Quinby, T.C.

1978-01-01

Metal powders, metal oxide powders, and mixtures thereof of controlled particle size are provided by reacting an aqueous solution containing dissolved metal values with excess urea. Upon heating, urea reacts with water from the solution to leave a molten urea solution containing the metal values. The molten urea solution is heated to above about 180 0 C, whereupon metal values precipitate homogeneously as a powder. The powder is reduced to metal or calcined to form oxide particles. One or more metal oxides in a mixture can be selectively reduced to produce metal particles or a mixture of metal and metal oxide particles

Multiscale model of metal alloy oxidation at grain boundaries

International Nuclear Information System (INIS)

Sushko, Maria L.; Alexandrov, Vitaly; Schreiber, Daniel K.; Rosso, Kevin M.; Bruemmer, Stephen M.

2015-01-01

High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr 2 O 3 . This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl 2 O 4 . Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3–10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr 2 O 3 has a plate-like structure with 1.2–1.7 nm wide pores running along the grain boundary, while NiAl 2 O 4 has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular direction providing an additional

Sulfur-Hz(CHx)y(z = 0,1) functionalized metal oxide nanostructure decorated interfaces: Evidence of Lewis base and Brönsted acid sites – Influence on chemical sensing

International Nuclear Information System (INIS)

Laminack, William; Baker, Caitlin; Gole, James

2015-01-01

Nanostructure metal oxide decorated n-type extrinsic porous silicon (PS) semiconductor interfaces are modified through in-situ interaction with acidic ethane and butane thiols (EtSH, BuSH) and basic diethyl sulfide (Et 2 S). Highly sensitive conductometric sensor evaluations and X-ray Photoelectron Spectroscopy demonstrate the effect of sulfur group functionalization modifying the acidity of the metal oxides and their interaction with NH 3 . SEM micrographs demonstrate that the sulfur treated particles are less than 30 nm in size. EDAX studies confirm the chemical composition of the modified nanoparticles and suggest the surface interaction of the sulfides and thiols. The acidic thiols can form Brönsted acidic sites enhancing the acidity of the metal oxides, thus broadening the initial metal oxide acidity range. The sulfides interact to lower the Lewis acidity of nanostructured metal oxide sites. Conductometric response matrices with NH 3 at room temperature, corresponding to the thiol and sulfide treated nanostructures of the metal oxides TiO 2 , SnO x , Ni x O, Cu x O, and Au x O (x >> 1) are evaluated for a dominant electron transduction process forming the basis for reversible chemical sensing in the absence of chemical bond formation. Treatment with the acidic thiols enhances the metal center acidity. It is suggested that the thiols can interact to increase the Brönsted acidity of the doped metal oxide surface if they maintain SH bonds. This process may account for the shift in Lewis acidity as the Brönsted acid sites counter the decrease in Lewis acidity resulting from the interaction of S-(CH x ) y groups. In contrast, treatment with basic Et 2 S decreases the Lewis acidity of the metal oxide sites, enhancing the basicity of the decorated interface. XPS measurements indicate a change in binding energy (BE) of the metal and oxygen centers. The observed changes in conductometric response do not represent a simple increase in surface acidity or basicity but

A study into the impact of interface roughness development on mechanical degradation of oxides formed on zirconium alloys

International Nuclear Information System (INIS)

Platt, P.; Wedge, S.; Frankel, P.; Gass, M.; Howells, R.; Preuss, M.

2015-01-01

As a cladding material used to encapsulate nuclear fuel pellets, zirconium alloys are the primary barrier separating the fuel and a pressurised steam or lithiated water environment. Degradation mechanisms such as oxidation can be the limiting factor in the life-time of the fuel assembly. Key to controlling oxidation, and therefore allowing increased burn-up of fuel, is the development of a mechanistic understanding of the corrosion process. In an autoclave, the oxidation kinetics for zirconium alloys are typically cyclical, with periods of accelerated kinetics being observed in steps of ∼2 μm oxide growth. These periods of accelerated oxidation are immediately preceded by the development of a layer of lateral cracks near the metal-oxide interface, which may be associated with the development of interface roughness. The present work uses scanning electron microscopy to carry out a statistical analysis of changes in the metal-oxide interface roughness between three different alloys at different stages of autoclave oxidation. The first two alloys are Zircaloy-4 and ZIRLO ™ for which analysis is carried out at stages before, during and after first transition. The third alloy is an experimental low tin alloy, which under the same oxidation conditions and during the same time period does not appear to go through transition. Assessment of the metal-oxide interface roughness is primarily carried out based on the root mean square of the interface slope known as the R dq parameter. Results show clear trends with relation to transition points in the corrosion kinetics. Discussion is given to how this relates to the existing mechanistic understanding of the corrosion process, and the components required for possible future modelling approaches

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

Science.gov (United States)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

Science.gov (United States)

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Interface properties of Fe/MgO/Cu-phthalocyanine metal-insulator-organic semiconductor structures

International Nuclear Information System (INIS)

Lee, Nyunjong; Bae, Yujeong; Kim, Taehee; Ito, Eisuke; Hara, Masahiko

2014-01-01

Hybrid interface structures consisting of organic copper-phthalocyanine (CuPc) and ferromagnetic metal Fe(001) with and without a MgO(001) cover were investigated by using surface sensitive techniques of X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. A systematic study of the energy level alignment at the interfaces was carried out. For the hybrid interfaces considered here, our results indicate that the insertion of an artificially-grown ultra-thin oxide layer MgO(001) can prevent Femi level pinning and induce a rather large interface dipole, thereby resulting in remarkable CuPc Fermi level shifts when the thickness of the CuPc film is less than 3 nm. This study provides a better understanding of spin filtering in MgO-based organic spin devices and a new way to alter the interface electronic structure of metal/organic semiconductor hybrid systems.

The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

Directory of Open Access Journals (Sweden)

Đorić-Veljković Snežana M.

2013-01-01

Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Investigation of the Alkaline Electrochemical Interface and Development of Composite Metal/Metal-Oxides for Hydrogen and Oxygen Electrodes

Science.gov (United States)

Bates, Michael

electrolyte. The HER kinetics of numerous binary & ternary Ni-alloys and composite Ni/metal-oxide/C samples were evaluated in aqueous 0.1 M KOH electrolyte. Furthermore a model of the double layer interface is proposed, which helps explain the observed ensemble effect in the presence of AEI. In Chapter 3, Ni-Fe and Ni-Fe-Co mixed-metal-oxide (MMO) films were investigated for oxygen evolution reaction (OER) activity in 0.1M KOH on high surface area Raney-Nickel supports. During investigations of MMO activity, aniline was identified as a useful "capping agent" for synthesis of high-surface area MMO-polyaniline (PANI) composite materials. A Ni-Fe-Co/PANI-Raney-Ni catalyst was developed which exhibits enhanced mass-activity compared to state-of-the-art Ni-Fe OER electrocatalysts reported to date. The morphology of the MMO catalyst film on PANI/Raney-Ni support provides excellent dispersion of active-sites and should maintain high active-site utilization for catalyst loading on gas-diffusion electrodes. In Chapter 4, the de-activation of reversible-hydrogen electrode catalysts was investigated and the development of a Pt-Ir-Nx/C catalyst is reported, which exhibits significantly increased stability in the HBr/Br 2 electrolyte. In contrast a Pt-Ir/C catalyst exhibited increased tolerance to high-voltage cycling and in particular showed recovery of electrocatalytic activity after reversible de-activation (presumably from bromide adsorption and subsequent oxidative bromide stripping). Under the harshest testing conditions of high-voltage cycling or exposure to Br2 the Pt-based catalyst showed a trend in stability: Pt < Pt-Ir < Pt-Ir-Nx. (Abstract shortened by UMI.).

Nucleation and growth of oxides on metals with special reference to mild steel and zirconium

Energy Technology Data Exchange (ETDEWEB)

Gadiyar, H S [Bhabha Atomic Research Centre, Bombay (India). Metallurgy Div.

1977-01-01

The oxidation of metals is a complex phenomenon of metal-gas interface for the understanding of which a multidisciplinary approach is necessary. Some aspects of this phenomena are discussed with reference to oxygen or steam as the oxidant. As a case study, the nucleation of oxide through microstructural characterisation, the kinetics and mechanism involved in the case of oxidation of Zr and its alloys have been examined.

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

Science.gov (United States)

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

The Role of Interfaces in Polyethylene/Metal-Oxide Nanocomposites for Ultrahigh-Voltage Insulating Materials.

Science.gov (United States)

Pourrahimi, Amir Masoud; Olsson, Richard T; Hedenqvist, Mikael S

2018-01-01

Recent progress in the development of polyethylene/metal-oxide nanocomposites for extruded high-voltage direct-current (HVDC) cables with ultrahigh electric insulation properties is presented. This is a promising technology with the potential of raising the upper voltage limit in today's underground/submarine cables, based on pristine polyethylene, to levels where the loss of energy during electric power transmission becomes low enough to ensure intercontinental electric power transmission. The development of HVDC insulating materials together with the impact of the interface between the particles and the polymer on the nanocomposites electric properties are shown. Important parameters from the atomic to the microlevel, such as interfacial chemistry, interfacial area, and degree of particle dispersion/aggregation, are discussed. This work is placed in perspective with important work by others, and suggested mechanisms for improved insulation using nanoparticles, such as increased charge trap density, adsorption of impurities/ions, and induced particle dipole moments are considered. The effects of the nanoparticles and of their interfacial structures on the mechanical properties and the implications of cavitation on the electric properties are also discussed. Although the main interest in improving the properties of insulating polymers has been on the use of nanoparticles, leading to nanodielectrics, it is pointed out here that larger microscopic hierarchical metal-oxide particles with high surface porosity also impart good insulation properties. The impact of the type of particle and its inherent properties (purity and conductivity) on the nanocomposite dielectric and insulating properties are also discussed based on data obtained by a newly developed technique to directly observe the charge distribution on a nanometer scale in the nanocomposite. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Embedded Metal Oxide Sensors (SEMOS)

DEFF Research Database (Denmark)

Jespersen, Jesper Lebæk; Talat Ali, Syed; Pleth Nielsen, Lars

SEMOS is a joint project between Aalborg University, Danish Technological Institute and Danish Technical University in which micro temperature sensors and metal oxide-based gas sensors are developed and tested in a simulated fuel cell environment as well as in actual working fuel cells. Initially......, sensors for measuring the temperatures in an operating HT-PEM (High Temperature-Proton Exchange Membrane) fuel cell are developed for detecting in-plane temperature variations. 5 different tracks for embedded thermal sensors are investigated. The fuel cell MEA (Membrane Electrode Assembly) is quite...... complex and sensors are not easily implemented in the construction. Hence sensor interface and sensor position must therefore be chosen carefully in order to make the sensors as non-intrusive as possible. Metal Oxide Sensors (MOX) for measuring H2, O2 and CO concentration in a fuel cell environment...

Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

KAUST Repository

Li, Meng; Xie, De-Gang; Ma, Evan; Li, Ju; Zhang, Xixiang; Shan, Zhi-Wei

2017-01-01

Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

KAUST Repository

Li, Meng

2017-02-20

Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

International Nuclear Information System (INIS)

Wadati, H.; Fujimori, A.

2013-01-01

Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

Equilibrium and non-equilibrium metal-ceramic interfaces

International Nuclear Information System (INIS)

Gao, Y.; Merkle, K.L.

1992-01-01

Metal-ceramic interfaces in thermodynamic equilibrium (Au/ZrO 2 ) and non-equilibrium (Au/MgO) have been studied by TEM and HREM. In the Au/ZrO 2 system, ZrO 2 precipitates formed by internal oxidation of a 7%Zr-Au alloy show a cubic ZrO 2 phase. It appears that formation of the cubic ZrO 2 is facilitated by alignment with the Au matrix. Most of the ZrO 2 precipitates have a perfect cube-on-cube orientation relationship with the Au matrix. The large number of interfacial steps observed in a short-time annealing experiment indicate that the precipitates are formed by the ledge growth mechanism. The lowest interfacial energy is indicated by the dominance of closed-packed [111] Au/ZrO 2 interfaces. In the Au/MgO system, composite films with small MgO smoke particles embedded in a Au matrix were prepared by a thin film technique. HREM observations show that most of the Au/MgO interfaces have a strong tendency to maintain a dense lattice structure across the interfaces irrespective of whether the interfaces are incoherent or semi-coherent. This paper reports that this indicates that there may be a relatively strong bond between MgO and Au

Extracting metals directly from metal oxides

International Nuclear Information System (INIS)

Wai, C.M.; Smart, N.G.; Phelps, C.

1997-01-01

A method of extracting metals directly from metal oxides by exposing the oxide to a supercritical fluid solvent containing a chelating agent is described. Preferably, the metal is an actinide or a lanthanide. More preferably, the metal is uranium, thorium or plutonium. The chelating agent forms chelates that are soluble in the supercritical fluid, thereby allowing direct removal of the metal from the metal oxide. In preferred embodiments, the extraction solvent is supercritical carbon dioxide and the chelating agent is selected from the group consisting of β-diketones, halogenated β-diketones, phosphinic acids, halogenated phosphinic acids, carboxylic acids, halogenated carboxylic acids, and mixtures thereof. In especially preferred embodiments, at least one of the chelating agents is fluorinated. The method provides an environmentally benign process for removing metals from metal oxides without using acids or biologically harmful solvents. The chelate and supercritical fluid can be regenerated, and the metal recovered, to provide an economic, efficient process. 4 figs

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

KAUST Repository

Haque, Mohammed

2017-07-10

Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide-bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo-generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

Effects of conducting oxide barrier layers on the stability of Crofer® 22 APU/Ca3Co4O9 interfaces

DEFF Research Database (Denmark)

Holgate, Tim C.; Han, Li; Wu, NingYu

2014-01-01

Practical implementation of oxide thermoelectrics on an industrial or commercial scale for waste heat energy conversion requires the development of chemically stable interfaces between metal interconnects and oxide thermoelements that exhibit low electrical contact resistances. A commercially...... available high-chrome iron alloy (i.e., Crofer® 22 APU) serving as the interconnect metal was spray coated with LaNi0.6Fe0.4O3 (LNFO) or (Mn,Co)3O4 spinel and then interfaced with a p-type thermoelectric material—calcium cobaltate (Ca3Co4O9)—using spark plasma sintering. The interfaces have been...

Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

2015-06-08

Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

The molecule-metal interface

CERN Document Server

Koch, Norbert; Wee, Andrew Thye Shen

2013-01-01

Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface.The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electroni

Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

International Nuclear Information System (INIS)

Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

2014-01-01

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Energy Technology Data Exchange (ETDEWEB)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

2016-07-04

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

Metal induced gap states at alkali halide/metal interface

International Nuclear Information System (INIS)

Kiguchi, Manabu; Yoshikawa, Genki; Ikeda, Susumu; Saiki, Koichiro

2004-01-01

The electronic state of a KCl/Cu(0 0 1) interface was investigated using the Cl K-edge near-edge X-ray absorption fine structure (NEXAFS). A pre-peak observed on the bulk edge onset of thin KCl films has a similar feature to the peak at a LiCl/Cu(0 0 1) interface, which originates from the metal induced gap state (MIGS). The present result indicates that the MIGS is formed universally at alkali halide/metal interfaces. The decay length of MIGS to an insulator differs from each other, mainly due to the difference in the band gap energy of alkali halide

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

Science.gov (United States)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Photoelectrolysis at the oxide-electrolyte interface as interpreted through the 'transition' layer model

Science.gov (United States)

Kalia, R. K.; Weber, Michael F.; Schumacher, L.; Dignam, M. J.

1980-12-01

A transition layer model of the oxide-electrolyte interface, proposed earlier by one of us, is outlined and then examined in the light of experimental data relating primarily to photoelectrolysis of water at semiconducting oxide electrodes. The model provides useful insight into the behaviour of the system and allows a calculation of thc minimum bias potential needed for photoelectrolysis, thus illuminating the origin of the requirement for such an external bias. In order to electrolyse water without a bias, the model requires an n-type oxide to be sufficiently reduced so that it is thermodynamically capable of chemically reducing water to produce hydrogen at 1 atm pressure. Similarly, for bias-free operation, a p-type metal oxide must be thermodynamically unstable with respect to the release of oxygen at 1 atm pressure. In the face of these requirements it is apparent that oxide stability is bound to be in general a serious problem for nonstoichiometric single metal oxides.

Direct plutonium oxide reduction/electrorefining interface program

International Nuclear Information System (INIS)

Baldwin, C.E.; Berry, J.W.; Giebel, R.E.; Long, J.L.; Moser, W.S.; Navratil, J.D.; Tibbitts, S.F.

1986-01-01

Research test work and production data evaluation were performed by the Direct Oxide Reduction (DOR)/Electrorefining (ER) Interface Task Team to determine the cause for poor efficiency and yields during ER of DOR metal product. Production data and preliminary test results provided a working hypothesis. Extremely high loadings of impurities (whatever their exact source and identity) in the DOR product metal may lead to failure of the metal to become a molten anode at ER operating temperatures. Moderate impurity levels permit attainment of a molten anode, but lead to low yields because of premature anode solidification. The test results did not conclusively prove the hypothesis or identify specific mechanisms, but were qualitatively supportive. By stirring the molten anode metal pool, as well as the molten salt phase, generally good ER runs were obtained with both DOR and non-DOR feeds. These limited preliminary results suggest that anode stirring decreases the sensitivity of the ER process to DOR-related impurities. Suggested corrective measures included: (1) minimizing impurities in DOR feed to ER and (2) continued evaluation of anode stirring along with run termination by back-EMF measurements. 1 ref., 3 figs., 13 tabs

A dual enzyme functionalized nanostructured thulium oxide based interface for biomedical application

Science.gov (United States)

Singh, Jay; Roychoudhury, Appan; Srivastava, Manish; Solanki, Pratima R.; Lee, Dong Won; Lee, Seung Hee; Malhotra, B. D.

2013-12-01

In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared nanorods has been electrophoretically deposited (EPD) onto an indium-tin-oxide (ITO) glass substrate. The n-Tm2O3 nanorods are found to provide improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The structural and morphological studies of n-Tm2O3 nanorods have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopic techniques. This interfacial platform has been used for fabrication of a total cholesterol biosensor by immobilizing cholesterol esterase (ChEt) and cholesterol oxidase (ChOx) onto a Tm2O3 nanostructured surface. The results of response studies of the fabricated ChEt-ChOx/n-Tm2O3/ITO bioelectrode show a broad linear range of 8-400 mg dL-1, detection limit of 19.78 mg (dL cm-2)-1, and high sensitivity of 0.9245 μA (mg per dL cm-2)-1 with a response time of 40 s. Further, this bioelectrode has been utilized for estimation of total cholesterol with negligible interference (3%) from analytes present in human serum samples. The utilization of this n-Tm2O3 modified electrode for enzyme-based biosensor analysis offers an efficient strategy and a novel interface for application of the rare earth metal oxide materials in the field of electrochemical sensors and bioelectronic devices.In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared

Metal-dielectric interfaces in gigascale electronics thermal and electrical stability

CERN Document Server

He, Ming

2012-01-01

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric i...

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

International Nuclear Information System (INIS)

Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

2014-01-01

We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm 2 /V s to 17.9 cm 2 /V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO 2 . Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm −3 to 5.83 g cm −3 (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar

2011-03-31

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar; Pulikkotil, J. J.; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Point defect stability in a semicoherent metallic interface

Science.gov (United States)

González, C.; Iglesias, R.; Demkowicz, M. J.

2015-02-01

We present a comprehensive density functional theory (DFT) -based study of different aspects of one vacancy and He impurity atom behavior at semicoherent interfaces between the low-solubility transition metals Cu and Nb. Such interfaces have not been previously modeled using DFT. A thorough analysis of the stability and mobility of the two types of defects at the interfaces and neighboring internal layers has been performed and the results have been compared to the equivalent cases in the pure metallic matrices. The different behavior of fcc and bcc metals on both sides of the interface has been specifically assessed. The modeling effort undertaken is the first attempt to study the stability and defect energetics of noncoherent Cu/Nb interfaces from first principles, in order to assess their potential use in radiation-resistant materials.

Emergent Phenomena at Oxide Interfaces

International Nuclear Information System (INIS)

Hwang, H.Y.

2012-01-01

Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r → -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t → -t. In quantum mechanics, the time-evolution of the wave-function Ψ is given by the phase factor e -iEt/h b ar with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign

Methods for synthesizing metal oxide nanowires

Science.gov (United States)

Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

2016-08-09

A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

Non-equilibrium oxidation states of zirconium during early stages of metal oxidation

International Nuclear Information System (INIS)

Ma, Wen; Yildiz, Bilge; Herbert, F. William; Senanayake, Sanjaya D.

2015-01-01

The chemical state of Zr during the initial, self-limiting stage of oxidation on single crystal zirconium (0001), with oxide thickness on the order of 1 nm, was probed by synchrotron x-ray photoelectron spectroscopy. Quantitative analysis of the Zr 3d spectrum by the spectrum reconstruction method demonstrated the formation of Zr 1+ , Zr 2+ , and Zr 3+ as non-equilibrium oxidation states, in addition to Zr 4+ in the stoichiometric ZrO 2 . This finding resolves the long-debated question of whether it is possible to form any valence states between Zr 0 and Zr 4+ at the metal-oxide interface. The presence of local strong electric fields and the minimization of interfacial energy are assessed and demonstrated as mechanisms that can drive the formation of these non-equilibrium valence states of Zr

In situ observation of Ag-Cu-Ti liquid alloy/solid oxide interfaces

Energy Technology Data Exchange (ETDEWEB)

Durov, O.V. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)], E-mail: avdu@ukr.net; Krasovskyy, V.P. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)

2008-11-15

In situ investigation methods are a very interesting means for understanding high-temperature interface processes. A method of direct observation of the interactions between transparent materials (Al{sub 2}O{sub 3}, SiO{sub 2}, CaF{sub 2}) and metal melts was elaborated. For the Ag-36.65 at.%Cu-8.15 at.%Ti/sapphire system, the formation of a dark compound at the interface was observed to occur at high temperature. This result does not confirm the conclusion of a neutron spectroscopy study which indicated that titanium oxides form at the interface only during solidification of the alloy. Interactions of the same alloy with SiO{sub 2} and CaF{sub 2} were also considered.

Metal oxide nanoparticle mediated enhanced Raman scattering and its use in direct monitoring of interfacial chemical reactions.

Science.gov (United States)

Li, Li; Hutter, Tanya; Finnemore, Alexander S; Huang, Fu Min; Baumberg, Jeremy J; Elliott, Stephen R; Steiner, Ullrich; Mahajan, Sumeet

2012-08-08

Metal oxide nanoparticles (MONPs) have widespread usage across many disciplines, but monitoring molecular processes at their surfaces in situ has not been possible. Here we demonstrate that MONPs give highly enhanced (×10(4)) Raman scattering signals from molecules at the interface permitting direct monitoring of their reactions, when placed on top of flat metallic surfaces. Experiments with different metal oxide materials and molecules indicate that the enhancement is generic and operates at the single nanoparticle level. Simulations confirm that the amplification is principally electromagnetic and is a result of optical modulation of the underlying plasmonic metallic surface by MONPs, which act as scattering antennae and couple light into the confined region sandwiched by the underlying surface. Because of additional functionalities of metal oxides as magnetic, photoelectrochemical and catalytic materials, enhanced Raman scattering mediated by MONPs opens up significant opportunities in fundamental science, allowing direct tracking and understanding of application-specific transformations at such interfaces. We show a first example by monitoring the MONP-assisted photocatalytic decomposition reaction of an organic dye by individual nanoparticles.

X-ray studies of interface Fe-oxide in annealed MgO based magnetic tunneling junctions

Energy Technology Data Exchange (ETDEWEB)

Telesca, D., E-mail: donaldtelesca@gmail.com [Department of Physics, University of Connecticut, 2152 Hillside Road, Storrs, CT 06269 (United States); Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Sinkovic, B. [Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Yang, See-Hun; Parkin, S.S.P. [IBM Amaden Research Center, 650 Harry Road, San Jose, CA 95120 (United States)

2012-08-15

Highlights: Black-Right-Pointing-Pointer This work concludes the presence of oxide in MgO/transition-metal bi-layers. Black-Right-Pointing-Pointer Thermal annealing causes a possible structural transformation of the oxide. Black-Right-Pointing-Pointer This is first evidence for a possible structural change of the oxide. Black-Right-Pointing-Pointer First use of the O K-edge XAS signature of TM oxides to confirm presence of oxide. Black-Right-Pointing-Pointer We see a diffusion of oxygen and a decrease in interface roughness. -- Abstract: X-ray absorption spectroscopy and X-ray scattering have been used to determine the oxidation reactions at the buried MgO/Fe interface as a result of the deposition of MgO. We confirm that Fe-oxide is present at the MgO/Fe and MgO/CoFe interfaces and amounts to less than 1 mL in thickness. The Fe-oxide is a mixture of different iron oxide phases within the ultra-thin layer which can be reduced following annealing. We observe the transformation of the interfacial oxide from a more Fe{sub 2}O{sub 3}-like phase to a more FeO-like phase following annealing, and that this process is most noticeable between the 200 and 350 Degree-Sign C annealing steps. In addition, the formation of a more bulk like MgO electronic structure following annealing was observed.

A Universal Method to Engineer Metal Oxide-Metal-Carbon Interface for Highly Efficient Oxygen Reduction.

Science.gov (United States)

Lv, Lin; Zha, Dace; Ruan, Yunjun; Li, Zhishan; Ao, Xiang; Zheng, Jie; Jiang, Jianjun; Chen, Hao Ming; Chiang, Wei-Hung; Chen, Jun; Wang, Chundong

2018-03-27

Oxygen is the most abundant element in the Earth's crust. The oxygen reduction reaction (ORR) is also the most important reaction in life processes and energy converting/storage systems. Developing techniques toward high-efficiency ORR remains highly desired and a challenge. Here, we report a N-doped carbon (NC) encapsulated CeO 2 /Co interfacial hollow structure (CeO 2 -Co-NC) via a generalized strategy for largely increased oxygen species adsorption and improved ORR activities. First, the metallic Co nanoparticles not only provide high conductivity but also serve as electron donors to largely create oxygen vacancies in CeO 2 . Second, the outer carbon layer can effectively protect cobalt from oxidation and dissociation in alkaline media and as well imparts its higher ORR activity. In the meanwhile, the electronic interactions between CeO 2 and Co in the CeO 2 /Co interface are unveiled theoretically by density functional theory calculations to justify the increased oxygen absorption for ORR activity improvement. The reported CeO 2 -Co-NC hollow nanospheres not only exhibit decent ORR performance with a high onset potential (922 mV vs RHE), half-wave potential (797 mV vs RHE), and small Tafel slope (60 mV dec -1 ) comparable to those of the state-of-the-art Pt/C catalysts but also possess long-term stability with a negative shift of only 7 mV of the half-wave potential after 2000 cycles and strong tolerance against methanol. This work represents a solid step toward high-efficient oxygen reduction.

Metal-semiconductor interface in extreme temperature conditions

International Nuclear Information System (INIS)

Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

2008-01-01

We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Recent Advances in Antimicrobial Hydrogels Containing Metal Ions and Metals/Metal Oxide Nanoparticles

Directory of Open Access Journals (Sweden)

Fazli Wahid

2017-11-01

Full Text Available Recently, the rapid emergence of antibiotic-resistant pathogens has caused a serious health problem. Scientists respond to the threat by developing new antimicrobial materials to prevent or control infections caused by these pathogens. Polymer-based nanocomposite hydrogels are versatile materials as an alternative to conventional antimicrobial agents. Cross-linking of polymeric materials by metal ions or the combination of polymeric hydrogels with nanoparticles (metals and metal oxide is a simple and effective approach for obtaining a multicomponent system with diverse functionalities. Several metals and metal oxides such as silver (Ag, gold (Au, zinc oxide (ZnO, copper oxide (CuO, titanium dioxide (TiO2 and magnesium oxide (MgO have been loaded into hydrogels for antimicrobial applications. The incorporation of metals and metal oxide nanoparticles into hydrogels not only enhances the antimicrobial activity of hydrogels, but also improve their mechanical characteristics. Herein, we summarize recent advances in hydrogels containing metal ions, metals and metal oxide nanoparticles with potential antimicrobial properties.

Nanoparticular metal oxide/anatase catalysts

DEFF Research Database (Denmark)

2010-01-01

The present invention concerns a method of preparation of nanoparticular metal oxide catalysts having a narrow particle size distribution. In particular, the invention concerns preparation of nanoparticular metal oxide catalyst precursors comprising combustible crystallization seeds upon which...... the catalyst metai oxide is co-precipitated with the carrier metal oxide, which crystallization seeds are removed by combustion in a final calcining step. The present invention also concerns processes wherein the nanoparticular metal oxide catalysts of the invention are used, such as SCR (deNOx) reactions...

A unique metal-semiconductor interface and resultant electron transfer phenomenon

OpenAIRE

Taft, S. L.

2012-01-01

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

Corrosion mechanisms of zirconium alloys - study of the initial oxidation kinetics and of the mechanical behaviour of the metal/oxide system

International Nuclear Information System (INIS)

Parise, M.

1996-12-01

Nuclear fuel claddings are made of zirconium alloys. The conditions of use lead the cladding oxidize outside. The so-formed layers behaves like a thermal barrier and prevents from using oxidized claddings with an oxide thickness larger than 100 μm. The oxidation kinetic is approximately cubic for oxide thicknesses smaller than about 2μm, linear beyond. A kinetic model has been proposed which estimates the post-transition growth rate from the kinetic parameters of the pre-transition state and morphological features of post-transition layers. This work aims at providing the necessary elements to validate this model and studying the layers around the kinetic transition, in order to determine whether the oxidation mechanisms before and after the transition are similar. Thicknesses of the 50 - 500 nm range of the oxide layers are measured by an optical method; pre-transition kinetics are thus precisely determined. The effect of the composition, the thermal treatment and the presence of oxygen in solid solution is studied. The morphological and crystallographic study of the layers show that they exhibit a lot of similarities before and after the kinetic transition. The results concerning the kinetic aspects and the morphology of the post-transition layers point out that the proposed model leads to realistic post-transition growth rates. Furthermore, the kinetic transition corresponds to the appearance of cracks in the oxide layer. The mechanical behaviour of the metal/oxide system has been modelled at different scales. When the specific behaviours of the metal and the oxide are taken into account together with the interface geometry, radial stresses appear, which are high enough to locally open cracks. The appearance and localization of cracks depend on both the interface geometry and the stress distribution in the metal/oxide system. (author)

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2014-12-08

We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

Two-Dimensional Metal Oxide Nanomaterials for Next-Generation Rechargeable Batteries.

Science.gov (United States)

Mei, Jun; Liao, Ting; Kou, Liangzhi; Sun, Ziqi

2017-12-01

The exponential increase in research focused on two-dimensional (2D) metal oxides has offered an unprecedented opportunity for their use in energy conversion and storage devices, especially for promising next-generation rechargeable batteries, such as lithium-ion batteries (LIBs) and sodium-ion batteries (NIBs), as well as some post-lithium batteries, including lithium-sulfur batteries, lithium-air batteries, etc. The introduction of well-designed 2D metal oxide nanomaterials into next-generation rechargeable batteries has significantly enhanced the performance of these energy-storage devices by providing higher chemically active interfaces, shortened ion-diffusion lengths, and improved in-plane carrier-/charge-transport kinetics, which have greatly promoted the development of nanotechnology and the practical application of rechargeable batteries. Here, the recent progress in the application of 2D metal oxide nanomaterials in a series of rechargeable LIBs, NIBs, and other post lithium-ion batteries is reviewed relatively comprehensively. Current opportunities and future challenges for the application of 2D nanomaterials in energy-storage devices to achieve high energy density, high power density, stable cyclability, etc. are summarized and outlined. It is believed that the integration of 2D metal oxide nanomaterials in these clean energy devices offers great opportunities to address challenges driven by increasing global energy demands. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of vertically aligned metal oxide nanostructures

KAUST Repository

Roqan, Iman S.

2016-03-03

Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1 -dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or undoped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.

Organic/metal interfaces. Electronic and structural properties

Energy Technology Data Exchange (ETDEWEB)

Duhm, Steffen

2008-07-17

This work addresses several important topics of the field of organic electronics. The focus lies on organic/metal interfaces, which exist in all organic electronic devices. Physical properties of such interfaces are crucial for device performance. Four main topics have been covered: (i) the impact of molecular orientation on the energy levels, (ii) energy level tuning with strong electron acceptors, (iii) the role of thermodynamic equilibrium at organic/ organic homo-interfaces and (iv) the correlation of interfacial electronic structure and bonding distance. To address these issues a broad experimental approach was necessary: mainly ultraviolet photoelectron spectroscopy was used, supported by X-ray photoelectron spectroscopy, metastable atom electron spectroscopy, X-ray diffraction and X-ray standing waves, to examine vacuum sublimed thin films of conjugated organic molecules (COMs) in ultrahigh vacuum. (i) A novel approach is presented to explain the phenomenon that the ionization energy in molecular assemblies is orientation dependent. It is demonstrated that this is due to a macroscopic impact of intramolecular dipoles on the ionization energy in molecular assemblies. Furthermore, the correlation of molecular orientation and conformation has been studied in detail for COMs on various substrates. (ii) A new approach was developed to tune hole injection barriers ({delta}{sub h}) at organic/metal interfaces by adsorbing a (sub-) monolayer of an organic electron acceptor on the metal electrode. Charge transfer from the metal to the acceptor leads to a chemisorbed layer, which reduces {delta}{sub h} to the COM overlayer. This concept was tested with three acceptors and a lowering of {delta}{sub h} of up to 1.2 eV could be observed. (iii) A transition from vacuum-level alignment to molecular level pinning at the homo-interface between a lying monolayer and standing multilayers of a COM was observed, which depended on the amount of a pre-deposited acceptor. The

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Science.gov (United States)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

Science.gov (United States)

Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

2017-02-01

Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

Science.gov (United States)

Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

2017-02-06

Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

Charge transfer and injection barrier at the metal-organic interfaces

Science.gov (United States)

Yan, Li

2002-09-01

The metal-organic interface plays a critical role in determining the functionality and performance of many innovative organic based devices. It has attracted extensive research interests in recent years. This thesis presents investigations of the electronic structures of organic materials, such as tris-(8-hydroxyquinoline) aluminum (Alq3) and copper phthalocyanine (CuPc), during their interface formation with metals. The characterization is accomplished by X-ray and ultraviolet photoelectron spectroscopes (XPS and UPS) and inverse photoelectron spectroscopy (IPES). As discussed herein, both occupied and unoccupied electronic states at the interfaces are carefully examined in different aspects. In Chapter 4, the charge transfer and chemical reaction at various metal/Alq3 interfaces are investigated using XPS and UPS to study the electron injection into the Alga film. Electron transfer from the low work function metal and Al/LiF(CsF) bilayer to the Alga has been observed. The role of the dielectric and possible chemistry at the interface are discussed in comparison of the low work function metals. Further in Chapter 5, the origin of the metal-interface dipole and the estimation of charge injection barrier is explored using several organic materials. A thermodynamic equilibrium model is extended to explain the relation between the charge transfer process ad the interface dipole. Further, in Chapter 6 the combination of XPS, UPS and IPES detailed the evolution of both occupied and unoccupied energy states during the alkali metal doping. The energy gap modification in organic due to metal doping is observed directly for the spectra. Chapter 7 provides stability study of the organic thin films under x-ray and UV light. The results verify the usability of UPS and XPS for the organic materials used in the thesis. Chapter 7 also shows the secondary ion mass spectroscopy results of metal diffusion in organic thin films.

Metal-support interactions in systems palladium deposited on oxidized tungsten surfaces

Czech Academy of Sciences Publication Activity Database

Plšek, Jan; Jirka, Ivan; Nikolajenko, Vladimír; Knor, Zlatko

2006-01-01

Roč. 600, č. 18 (2006), s. 3943-3949 ISSN 0039-6028 R&D Projects: GA ČR GA202/05/0244 Institutional research plan: CEZ:AV0Z40400503 Keywords : field emission microscopy * thermal desorption spectroscopy * synchrotron radiation photoelectron spectroscopy * growth * metal-oxide interfaces Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.880, year: 2006

Shocked plate metal atom oxidation laser

International Nuclear Information System (INIS)

De Koker, J.G.; Rice, W.W. Jr.; Jensen, R.J.

1975-01-01

A method and apparatus for producing metal atom oxidation lasing wherein an explosively shocked grooved metal plate produces metal vapor jets directed through an appropriate gaseous oxidizer are described. Reaction of the metal vapor with the oxidizer produces molecular species having a population inversion therein. (U.S.)

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

2010-01-01

Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

Science.gov (United States)

Ye, Ning

Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

Science.gov (United States)

Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

2006-12-01

The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

Metal atom oxidation laser

International Nuclear Information System (INIS)

Jensen, R.J.; Rice, W.W.; Beattie, W.H.

1975-01-01

A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides

Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

Science.gov (United States)

2015-09-23

layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

Heat transfer on liquid-liquid interface of molten-metal and water

International Nuclear Information System (INIS)

Tanaka, T.; Saito, Yasushi; Mishima, Kaichiro

2001-01-01

Molten-core pool had been formed in the lower-head of TMI-2 pressure vessel at the severe accident. The lower head, however, didn't receive any damage by reactor core cooling. Heat transfer at outside of the lower head and boiling heat transfer at liquid-liquid interface of molten-metal and water, however, are important for initial cooling process of the molten-core pool. The heat transfer experiments for the liquid-liquid interface of molten-metal and water are carried out over the range of natural convection to film boiling region. Phenomenon on the heat transfer experiments are visualized by using of high speed video camera. Wood's metal and U-alloy 78 are used as molten-metal. The test section of the experiments consists of a copper block with heater, wood's metal, and water. Three thermocouple probes are used for temperature measurement of water side and the molten-metal side. Stability of the liquid-liquid interface is depended on the wetness of container wall for molten metal and the temperature distribution of the interface. Entrainment phenomena of molten-metal occurs by a fluctuation of the interface after boiling on the container wall surface. The boiling curves obtained from the liquid-liquid interface experiments are agree with the nucleate boiling and the film boiling correlations of solid-liquid system. (Suetake, M.)

Nanotoxicology of Metal Oxide Nanoparticles

Directory of Open Access Journals (Sweden)

Amedea B. Seabra

2015-06-01

Full Text Available This review discusses recent advances in the synthesis, characterization and toxicity of metal oxide nanoparticles obtained mainly through biogenic (green processes. The in vitro and in vivo toxicities of these oxides are discussed including a consideration of the factors important for safe use of these nanomaterials. The toxicities of different metal oxide nanoparticles are compared. The importance of biogenic synthesized metal oxide nanoparticles has been increasing in recent years; however, more studies aimed at better characterizing the potent toxicity of these nanoparticles are still necessary for nanosafely considerations and environmental perspectives. In this context, this review aims to inspire new research in the design of green approaches to obtain metal oxide nanoparticles for biomedical and technological applications and to highlight the critical need to fully investigate the nanotoxicity of these particles.

Durability of polymer/metal interfaces under cyclic loading

Science.gov (United States)

Du, Tianbao

Fatigue crack growth along metal/epoxy interface was examined in an aqueous environment and under mixed-mode conditions. A stress corrosion cracking mechanism was identified in this process. The fatigue crack growth rate in an aqueous environment was increased by several orders of magnitude and the fatigue threshold decreased by a factor of 10. The loss of adhesion in the aqueous environment was induced by the hydration of the surface oxide which resulted in a hydroxide with poor adhesion to the substrate metal. Self-assembled monolayer of long chain alkyl phosphonic acid and amino phosphonic acid were synthesized to enhance the adhesion and improve the durability of Al/epoxy interfacial bonding system. The same approach was taken to promote adhesion between copper and epoxy, where a two-component coupling system of 11-mercapto-1-undercanol and 3-aminopropyltriethoxysilane provided the most significant improvement in the copper/epoxy adhesion. The mixed-mode was applied by a piezoelectric actuator. Subcritical crack growth was observed along the epoxy/aluminum interface and the growth rate was found to depend on the magnitude of the applied electric field. Kinetics of the crack growth was correlated with the piezoelectric driving force. The resulting crack growth behavior was compared with the results from the conventional mechanical testing technique. Large differences were found between these two methods. Using this newly developed technique, effects of loading mode and frequency were studied. The fatigue resistance was found to increase with the mode II component and was expressed as a function of the KII/K I ratio. A strong frequency effect was observed for the subcritical crack growth along the Al/Epoxy interface, their fatigue resistance increased with the testing frequency.

Mesoporous Transition Metal Oxides for Supercapacitors

OpenAIRE

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-01-01

Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are result...

Nanotoxicity: oxidative stress mediated toxicity of metal and metal oxide nanoparticles.

Science.gov (United States)

Sarkar, Abhijit; Ghosh, Manoranjan; Sil, Parames Chandra

2014-01-01

Metal and metal oxide nanoparticles are often used as industrial catalysts or to improve product's functional properties. Recent advanced nanotechnology have been expected to be used in various fields, ranging from sensors, environmental remediation to biomedicine, medical biology and imaging, etc. However, the growing use of nanoparticles has led to their release into environment and increased levels of these particles at nearby sites or the surroundings of their manufacturing factories become obvious. The toxicity of metal and metal oxide nanoparticles on humans, animals, and certainly to the environment has become a major concern to our community. However, controversies still remain with respect to the toxic effects and the mechanisms of these nanoparticles. The scientific community now feels that an understanding of the toxic effects is necessary to handle these nanoparticles and their use. A new discipline, named nanotoxicology, has therefore been developed that basically refers to the study of the interactions of nanoparticles with biological systems and also measures the toxicity level related to human health. Nanoparticles usually generate reactive oxygen species to a greater extent than micro-sized particles resulting in increased pro-inflammatory reactions and oxidative stress via intracellular signaling pathways. In this review, we mainly focus on the routes of exposure of some metal and metal oxide nanoparticles and how these nanoparticles affect us or broadly the cells of our organs. We would also like to discuss the responsible mechanism(s) of the nanoparticle-induced reactive oxygen species mediated organ pathophysiology. A brief introduction of the characterization and application of these nanoparticles has also been included in the article.

Lability of Nanoparticulate Metal Complexes at a Macroscopic Metal Responsive (Bio)interface

NARCIS (Netherlands)

Duval, Jérôme F.L.; Town, Raewyn M.; Leeuwen, Van Herman P.

2018-01-01

The lability of metal complexes expresses the extent of the dissociative contribution of the complex species to the flux of metal ions toward a macroscopic metal-responsive (bio)interface, for example, an electrodic sensor or an organism. While the case of molecular ligands is well-established, it

Spin-Orbitronics at Transition Metal Interfaces

KAUST Repository

Manchon, Aurelien

2017-11-09

The presence of large spin–orbit interaction at transition metal interfaces enables the emergence of a variety of fascinating phenomena that have been at the forefront of spintronics research in the past 10 years. The objective of the present chapter is to offer a review of these various effects from a theoretical perspective, with a particular focus on spin transport, chiral magnetism, and their interplay. After a brief description of the orbital hybridization scheme at transition metal interfaces, we address the impact of spin–orbit coupling on the interfacial magnetic configuration, through the celebrated Dzyaloshinskii–Moriya interaction. We then discuss the physics of spin transport and subsequent torques occurring at these interfaces. We particularly address the spin Hall, spin swapping, and inverse spin-galvanic effects. Finally, the interplay between flowing charges and chiral magnetic textures and their induced dynamics are presented. We conclude this chapter by proposing some perspectives on promising research directions.

Spin-Orbitronics at Transition Metal Interfaces

KAUST Repository

Manchon, Aurelien; Belabbes, Abderrezak

2017-01-01

The presence of large spin–orbit interaction at transition metal interfaces enables the emergence of a variety of fascinating phenomena that have been at the forefront of spintronics research in the past 10 years. The objective of the present chapter is to offer a review of these various effects from a theoretical perspective, with a particular focus on spin transport, chiral magnetism, and their interplay. After a brief description of the orbital hybridization scheme at transition metal interfaces, we address the impact of spin–orbit coupling on the interfacial magnetic configuration, through the celebrated Dzyaloshinskii–Moriya interaction. We then discuss the physics of spin transport and subsequent torques occurring at these interfaces. We particularly address the spin Hall, spin swapping, and inverse spin-galvanic effects. Finally, the interplay between flowing charges and chiral magnetic textures and their induced dynamics are presented. We conclude this chapter by proposing some perspectives on promising research directions.

Catalytic production of metal carbonyls from metal oxides

Science.gov (United States)

Sapienza, Richard S.; Slegeir, William A.; Foran, Michael T.

1984-01-01

This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150.degree.-260.degree. C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO.sub.4 and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect.

Model potential for the description of metal/organic interface states

Science.gov (United States)

Armbrust, Nico; Schiller, Frederik; Güdde, Jens; Höfer, Ulrich

2017-01-01

We present an analytical one-dimensional model potential for the description of electronic interface states that form at the interface between a metal surface and flat-lying adlayers of π-conjugated organic molecules. The model utilizes graphene as a universal representation of these organic adlayers. It predicts the energy position of the interface state as well as the overlap of its wave function with the bulk metal without free fitting parameters. We show that the energy of the interface state depends systematically on the bond distance between the carbon backbone of the adayers and the metal. The general applicability and robustness of the model is demonstrated by a comparison of the calculated energies with numerous experimental results for a number of flat-lying organic molecules on different closed-packed metal surfaces that cover a large range of bond distances. PMID:28425444

The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

International Nuclear Information System (INIS)

Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

2012-01-01

Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Patterning of high mobility electron gases at complex oxide interfaces

DEFF Research Database (Denmark)

Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

2015-01-01

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

Oxidation-resistant interface coatings for Nicalon/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Stinton, D.P.; Besmann, T.M.; Lowden, R.A. [Oak Ridge National Lab., TN (United States); Liaw, P.K.; Shanmugham, S. [Univ. of Tennessee, Knoxville, TN (United States)

1997-12-01

Nicalon/SiC composites with thin C and C/oxide/C interfaces were fabricated. The oxide layers, mullite and Al{sub 2}O{sub 3}-TiO{sub 2}, were deposited by a sol-gel process, while the C layer was deposited by a chemical vapor infiltration method. The fabricated composites were flexure tested in both as-processed and oxidized conditions. Composites with C and C/oxide/C interfaces retained graceful failure even after 500 h oxidation at 1000 C, but with reduced flexural strengths.

Highly Sensitive Sensors Based on Metal-Oxide Nanocolumns for Fire Detection

Directory of Open Access Journals (Sweden)

Kwangjae Lee

2017-02-01

Full Text Available A fire detector is the most important component in a fire alarm system. Herein, we present the feasibility of a highly sensitive and rapid response gas sensor based on metal oxides as a high performance fire detector. The glancing angle deposition (GLAD technique is used to make the highly porous structure such as nanocolumns (NCs of various metal oxides for enhancing the gas-sensing performance. To measure the fire detection, the interface circuitry for our sensors (NiO, SnO2, WO3 and In2O3 NCs is designed. When all the sensors with various metal-oxide NCs are exposed to fire environment, they entirely react with the target gases emitted from Poly(vinyl chlorides (PVC decomposed at high temperature. Before the emission of smoke from the PVC (a hot-plate temperature of 200 °C, the resistances of the metal-oxide NCs are abruptly changed and SnO2 NCs show the highest response of 2.1. However, a commercial smoke detector did not inform any warning. Interestingly, although the NiO NCs are a p-type semiconductor, they show the highest response of 577.1 after the emission of smoke from the PVC (a hot-plate temperature of 350 °C. The response time of SnO2 NCs is much faster than that of a commercial smoke detector at the hot-plate temperature of 350 °C. In addition, we investigated the selectivity of our sensors by analyzing the responses of all sensors. Our results show the high potential of a gas sensor based on metal-oxide NCs for early fire detection.

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour.

Science.gov (United States)

Martin, T L; Coe, C; Bagot, P A J; Morrall, P; Smith, G D W; Scott, T; Moody, M P

2016-07-12

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

Science.gov (United States)

Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W.; Scott, T.; Moody, M. P.

2016-07-01

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

Study of the interface stability of the metal (Mo, Ni, Pd/HfO2/AlN/InGaAs MOS devices

Directory of Open Access Journals (Sweden)

Huy Binh Do

2017-08-01

Full Text Available The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP. The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

International Nuclear Information System (INIS)

Kim, Y; Pham, C; Chang, J P

2015-01-01

This review focuses on recent accomplishments on complex metal oxide based multifunctional materials and the potential they hold in advancing integrated circuits. It begins with metal oxide based high-κ materials to highlight the success of their integration since 45 nm complementary metal–oxide–semiconductor (CMOS) devices. By simultaneously offering a higher dielectric constant for improved capacitance as well as providing a thicker physical layer to prevent the quantum mechanical tunnelling of electrons, high-κ materials have enabled the continued down-scaling of CMOS based devices. The most recent technology driver has been the demand to lower device power consumption, which requires the design and synthesis of novel materials, such as complex metal oxides that exhibit remarkable tunability in their ferromagnetic, ferroelectric and multiferroic properties. These properties make them suitable for a wide variety of applications such as magnetoelectric random access memory, radio frequency band pass filters, antennae and magnetic sensors. Single-phase multiferroics, while rare, offer unique functionalities which have motivated much scientific and technological research to ascertain the origins of their multiferroicity and their applicability to potential devices. However, due to the weak magnetoelectric coupling for single-phase multiferroics, engineered multiferroic composites based on magnetostrictive ferromagnets interfacing piezoelectrics or ferroelectrics have shown enhanced multiferroic behaviour from effective strain coupling at the interface. In addition, nanostructuring of the ferroic phases has demonstrated further improvement in the coupling effect. Therefore, single-phase and engineered composite multiferroics consisting of complex metal oxides are reviewed in terms of magnetoelectric coupling effects and voltage controlled ferromagnetic properties, followed by a review on the integration challenges that need to be overcome to realize the

Graphene-metal interaction and its effect on the interface stability under ambient conditions

Energy Technology Data Exchange (ETDEWEB)

Dong, Aiyi; Fu, Qiang, E-mail: qfu@dicp.ac.cn; Wei, Mingming; Bao, Xinhe

2017-08-01

Highlights: • Graphene (Gr)/transition metal (TM: Fe, Co, Pt, and Au) interfaces form through TM intercalation at Gr/Ru(0001) surface. • Graphene-metal interaction strength follows the order of Ru ≈ Fe ≈ Co > Pt > Au. • Oxygen intercalation occurs at Gr/Fe, Gr/Co, Gr/Pt, and Gr/Ru interfaces but not at Gr/Au interface in air around 100 °C. - Abstract: Interaction between graphene (Gr) and metal plays an important role in physics and chemistry of graphene/metal interfaces. In this work, well-defined interfaces between graphene and transition metals (TMs) including Fe, Co, Pt, and Au were prepared through TM intercalation on Gr/Ru(0001) surface. The Gr-metal interaction was investigated using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. We found that graphene interacts most strongly with Ru, Fe and Co and most weakly with Au, following the order of Ru ≈ Fe ≈ Co > Pt > Au. The Gr/Fe, Gr/Co, Gr/Pt, and Gr/Ru interfaces can be readily intercalated by oxygen when exposed to air and illuminated by an infrared lamp. In contrast, oxygen intercalation does not happen at the Gr/Au interface under the same condition. It is suggested that both Gr-metal interaction and oxygen adsorption on the underlying metal surface are critical in the oxygen intercalation and the Gr/metal interface stability.

Structure characterization of Ni/NiO and Ti/TiO2 interfaces

International Nuclear Information System (INIS)

Lamine, Brahim

1983-01-01

This research thesis reports the structure characterization of Ni-NiO and Ti-TiO 2 interfaces through an in-situ investigation of thin blade oxidation, of oxide germination and growth, and through a determination of mutual metal/oxide orientation relationships. Thin films of TiO 2 have also been characterized and the study of the influence of vacuum annealing on TiO 2 layer structure and morphology has been attempted. The examination of metal-oxide interface reveals a duplex structure of NiO and TiO 2 layers, and a preferential grain boundary oxidation of the underlying metal [fr

FIB/SEM and SEM/EDS microstructural analysis of metal-ceramic and zirconia-ceramic interfaces.

Science.gov (United States)

Massimi, F; Merlati, G; Sebastiani, M; Battaini, P; Menghini, P; Bemporad, E

2012-01-10

Recently introduced FIB/SEM analysis in microscopy seems to provide a high-resolution characterization of the samples by 3D (FIB) cross-sectioning and (SEM) high resolution imaging. The aim of this study was to apply the FIB/SEM and SEM/EDS analysis to the interfaces of a metal-ceramic vs. two zirconia-ceramic systems. Plate samples of three different prosthetic systems were prepared in the dental lab following the manufacturers' instructions, where metal-ceramic was the result of a ceramic veneering (porcelain-fused-to-metal) and the two zirconia-ceramic systems were produced by the dedicated CAD-CAM procedures of the zirconia cores (both with final sintering) and then veneered by layered or heat pressed ceramics. In a FIB/SEM equipment (also called DualBeam), a thin layer of platinum (1 μm) was deposited on samples surface crossing the interfaces, in order to protect them during milling. Then, increasingly deeper trenches were milled by a focused ion beam, first using a relatively higher and later using a lower ion current (from 9 nA to 0.28 nA, 30KV). Finally, FEG-SEM (5KV) micrographs (1000-50,000X) were acquired. In a SEM the analysis of the morphology and internal microstructure was performed by 13KV secondary and backscattered electrons signals (in all the samples). The compositional maps were then performed by EDS probe only in the metal-ceramic system (20kV). Despite the presence of many voids in all the ceramic layers, it was possible to identify: (1) the grain structures of the metallic and zirconia substrates, (2) the thin oxide layer at the metal-ceramic interface and its interactions with the first ceramic layer (wash technique), (3) the roughness of the two different zirconia cores and their interactions with the ceramic interface, where the presence of zirconia grains in the ceramic layer was reported in two system possibly due to sandblasting before ceramic firing.

Heavy metal removal from water/wastewater by nanosized metal oxides: A review

International Nuclear Information System (INIS)

Hua, Ming; Zhang, Shujuan; Pan, Bingcai; Zhang, Weiming; Lv, Lu; Zhang, Quanxing

2012-01-01

Nanosized metal oxides (NMOs), including nanosized ferric oxides, manganese oxides, aluminum oxides, titanium oxides, magnesium oxides and cerium oxides, provide high surface area and specific affinity for heavy metal adsorption from aqueous systems. To date, it has become a hot topic to develop new technologies to synthesize NMOs, to evaluate their removal of heavy metals under varying experimental conditions, to reveal the underlying mechanism responsible for metal removal based on modern analytical techniques (XAS, ATR-FT-IR, NMR, etc.) or mathematical models, and to develop metal oxide-based materials of better applicability for practical use (such as granular oxides or composite materials). The present review mainly focuses on NMOs’ preparation, their physicochemical properties, adsorption characteristics and mechanism, as well as their application in heavy metal removal. In addition, porous host supported NMOs are particularly concerned because of their great advantages for practical application as compared to the original NMOs. Also, some magnetic NMOs were included due to their unique separation performance.

Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

Energy Technology Data Exchange (ETDEWEB)

Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

2012-06-01

We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

A metallic metal oxide (Ti5O9)-metal oxide (TiO2) nanocomposite as the heterojunction to enhance visible-light photocatalytic activity.

Science.gov (United States)

Li, L H; Deng, Z X; Xiao, J X; Yang, G W

2015-01-26

Coupling titanium dioxide (TiO2) with other semiconductors is a popular method to extend the optical response range of TiO2 and improve its photon quantum efficiency, as coupled semiconductors can increase the separation rate of photoinduced charge carriers in photocatalysts. Differing from normal semiconductors, metallic oxides have no energy gap separating occupied and unoccupied levels, but they can excite electrons between bands to create a high carrier mobility to facilitate kinetic charge separation. Here, we propose the first metallic metal oxide-metal oxide (Ti5O9-TiO2) nanocomposite as a heterojunction for enhancing the visible-light photocatalytic activity of TiO2 nanoparticles and we demonstrate that this hybridized TiO2-Ti5O9 nanostructure possesses an excellent visible-light photocatalytic performance in the process of photodegrading dyes. The TiO2-Ti5O9 nanocomposites are synthesized in one step using laser ablation in liquid under ambient conditions. The as-synthesized nanocomposites show strong visible-light absorption in the range of 300-800 nm and high visible-light photocatalytic activity in the oxidation of rhodamine B. They also exhibit excellent cycling stability in the photodegrading process. A working mechanism for the metallic metal oxide-metal oxide nanocomposite in the visible-light photocatalytic process is proposed based on first-principle calculations of Ti5O9. This study suggests that metallic metal oxides can be regarded as partners for metal oxide photocatalysts in the construction of heterojunctions to improve photocatalytic activity.

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Science.gov (United States)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Metal oxide nanosensors using polymeric membranes, enzymes and antibody receptors as ion and molecular recognition elements.

Science.gov (United States)

Willander, Magnus; Khun, Kimleang; Ibupoto, Zafar Hussain

2014-05-16

The concept of recognition and biofunctionality has attracted increasing interest in the fields of chemistry and material sciences. Advances in the field of nanotechnology for the synthesis of desired metal oxide nanostructures have provided a solid platform for the integration of nanoelectronic devices. These nanoelectronics-based devices have the ability to recognize molecular species of living organisms, and they have created the possibility for advanced chemical sensing functionalities with low limits of detection in the nanomolar range. In this review, various metal oxides, such as ZnO-, CuO-, and NiO-based nanosensors, are described using different methods (receptors) of functionalization for molecular and ion recognition. These functionalized metal oxide surfaces with a specific receptor involve either a complex formation between the receptor and the analyte or an electrostatic interaction during the chemical sensing of analytes. Metal oxide nanostructures are considered revolutionary nanomaterials that have a specific surface for the immobilization of biomolecules with much needed orientation, good conformation and enhanced biological activity which further improve the sensing properties of nanosensors. Metal oxide nanostructures are associated with certain unique optical, electrical and molecular characteristics in addition to unique functionalities and surface charge features which shows attractive platforms for interfacing biorecognition elements with effective transducing properties for signal amplification. There is a great opportunity in the near future for metal oxide nanostructure-based miniaturization and the development of engineering sensor devices.

Critical assessment of finite element analysis applied to metal–oxide interface roughness in oxidising zirconium alloys

Energy Technology Data Exchange (ETDEWEB)

Platt, P., E-mail: Philip.Platt@manchester.ac.uk [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Frankel, P. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Gass, M. [AMEC, Walton House, Faraday Street, Birchwood Park, Risley, Warrington WA3 6GA (United Kingdom); Preuss, M. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom)

2015-09-15

As a nuclear fuel cladding material, zirconium alloys act as a barrier between the fuel and pressurised steam or lithiated water environment. Controlling degradation mechanisms such as oxidation is essential to extending the in-service lifetime of the fuel. At temperatures of ∼360 °C zirconium alloys are known to exhibit cyclical, approximately cubic corrosion kinetics. With acceleration in the oxidation kinetics occurring every ∼2 μm of oxide growth, and being associated with the formation of a network of lateral cracks. Finite element analysis has been used previously to explain the lateral crack formation by the development of localised out-of-plane tensile stresses at the metal–oxide interface. This work uses the Abaqus finite element code to assess critically current approaches to representing the oxidation of zirconium alloys, with relation to undulations at the metal–oxide interface and localised stress generation. This includes comparison of axisymmetric and 3D quartered modelling approaches, and investigates the effect of interface geometry and plasticity in the metal substrate. Particular focus is placed on the application of the anisotropic strain tensor used to represent the oxidation mechanism, which is typically applied with a fixed coordinate system. Assessment of the impact of the tensor showed that 99% of the localised tensile stresses originated from the out-of-plane component of the strain tensor, rather than the in-plane expansion as was previously thought. Discussion is given to the difficulties associated with this modelling approach and the requirements for future simulations of the oxidation of zirconium alloys.

Methods of producing adsorption media including a metal oxide

Science.gov (United States)

Mann, Nicholas R; Tranter, Troy J

2014-03-04

Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

Metal Detector By Using PIC Microcontroller Interfacing With PC

Directory of Open Access Journals (Sweden)

Yin Min Theint

2015-06-01

Full Text Available Abstract This system proposes metal detector by using PIC microcontroller interfacing with PC. The system uses PIC microcontroller as the main controller whether the detected metal is ferrous metal or non-ferrous metal. Among various types of metal sensors and various types of metal detecting technologies concentric type induction coil sensor and VLF very low frequency metal detecting technology are used in this system. This system consists of two configurations Hardware configuration and Software configuration. The hardware components include induction coil sensors which senses the frequency changes of metal a PIC microcontroller personal computer PC buzzer light emitting diode LED and webcam. The software configuration includes a program controller interface. PIC MikroCprogramming language is used to implement the control system. This control system is based on the PIC 16F887 microcontroller.This system is mainly used in mining and high security places such as airport plaza shopping mall and governmental buildings.

Systematic study of metal-insulator-metal diodes with a native oxide

Science.gov (United States)

Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

2014-10-01

In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

Systematic study of metal-insulator-metal diodes with a native oxide

KAUST Repository

Donchev, E.

2014-10-07

© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

Study of Direct-Contact HfO2/Si Interfaces

Directory of Open Access Journals (Sweden)

Noriyuki Miyata

2012-03-01

Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

Metal-core@metal oxide-shell nanomaterials for gas-sensing applications: a review

Energy Technology Data Exchange (ETDEWEB)

Mirzaei, A.; Janghorban, K.; Hashemi, B. [Shiraz University, Department of Materials Science and Engineering (Iran, Islamic Republic of); Neri, G., E-mail: gneri@unime.it [University of Messina, Department of Electronic Engineering, Chemistry and Industrial Engineering (Italy)

2015-09-15

With an ever-increasing number of applications in many advanced fields, gas sensors are becoming indispensable devices in our daily life. Among different types of gas sensors, conductometric metal oxide semiconductor (MOS) gas sensors are found to be the most appealing for advanced applications in the automotive, biomedical, environmental, and safety sectors because of the their high sensitivity, reduced size, and low cost. To improve their sensing characteristics, new metal oxide-based nanostructures have thus been proposed in recent years as sensing materials. In this review, we extensively review gas-sensing properties of core@ shell nanocomposites in which metals as the core and metal oxides as the shell structure, both of nanometer sizes, are assembled into a single metal@metal oxide core–shell. These nanostructures not only combine the properties of both noble metals and metal oxides, but also bring unique synergetic functions in comparison with single-component materials. Up-dated achievements in the synthesis and characterization of metal@metal oxide core–shell nanostructures as well as their use in MOS sensors are here reported with the main objective of providing an overview about their gas-sensing properties.

Engineering magnetism at functional oxides interfaces: manganites and beyond.

Science.gov (United States)

Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

2017-11-08

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

Science.gov (United States)

Zhang, Zhenbo; Pantleon, Wolfgang

2017-07-01

Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were systematically investigated by high-resolution transmission electron microscopy. The majority of oxide nanoparticles were identified to be orthorhombic YAlO3. During hot consolidation and extrusion, they develop a coherent interface and a near cuboid-on-cube orientation relationship with the ferrite matrix in the material. After annealing at 1200 °C for 1 h, however, the orientation relationship between the oxide nanoparticles and the matrix becomes arbitrary, and their interface mostly incoherent. Annealing at 1300 °C leads to considerable coarsening of oxide nanoparticles, and a new orientation relationship of pseudo-cube-on-cube between oxide nanoparticles and ferrite matrix develops. The reason for the developing interfaces and orientation relationships between oxide nanoparticles and ferrite matrix under different conditions is discussed.

Conducting metal oxide and metal nitride nanoparticles

Science.gov (United States)

DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

2017-12-26

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

Investigation of buried metal-organic interface with photoelectron spectroscopy (PES)

Energy Technology Data Exchange (ETDEWEB)

Vrdoljak, Pavo; Schoell, Achim; Reinert, Friedrich [Universitaet Wuerzburg, Experimentelle Physik II, 97074 Wuerzburg (Germany); Umbach, Eberhard [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany)

2008-07-01

Metal-organic interfaces are of crucial importance for electronic devices since they influence the layer morphology, the electronic structure at contacts, and the charge carrier transport. Various investigations have addressed this issue from the viewpoint of surface science, applying model systems with thin organic films on flat (single crystalline or amorphous) metal substrates. The contacts in electronic devices, however, can be very different. This is mainly due to the morphological roughness of the interface in case of a metal top contact deposited on an organic layer and the possible influence on the electronic structure. In case of real contacts also interdiffusion has to be taken into account. However, surface sensitive techniques such as photoelectron spectroscopy (PES) and atomic force microscopy (AFM) can not immediately access the buried interface. To tackle this problem we have applied and optimised a lift-off technique which allows the removal of the metal top-contact in the UHV and analyse the interface between the contact and the organic film. We present first PES and AFM results of Au contacts deposited on PTCDA layers.

Influence of hole transport material/metal contact interface on perovskite solar cells

Science.gov (United States)

Lei, Lei; Zhang, Shude; Yang, Songwang; Li, Xiaomin; Yu, Yu; Wei, Qingzhu; Ni, Zhichun; Li, Ming

2018-06-01

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Atomistic approach for modeling metal-semiconductor interfaces

DEFF Research Database (Denmark)

Stradi, Daniele; Martinez, Umberto; Blom, Anders

2016-01-01

realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via the I–V curve. In particular, it will be demonstrated how doping — and bias — modifies the Schottky barrier, and how finite size models (the slab approach) are unable to describe these interfaces......We present a general framework for simulating interfaces using an atomistic approach based on density functional theory and non-equilibrium Green's functions. The method includes all the relevant ingredients, such as doping and an accurate value of the semiconductor band gap, required to model...

Metal Oxide Nanosensors Using Polymeric Membranes, Enzymes and Antibody Receptors as Ion and Molecular Recognition Elements

Directory of Open Access Journals (Sweden)

Magnus Willander

2014-05-01

Full Text Available The concept of recognition and biofunctionality has attracted increasing interest in the fields of chemistry and material sciences. Advances in the field of nanotechnology for the synthesis of desired metal oxide nanostructures have provided a solid platform for the integration of nanoelectronic devices. These nanoelectronics-based devices have the ability to recognize molecular species of living organisms, and they have created the possibility for advanced chemical sensing functionalities with low limits of detection in the nanomolar range. In this review, various metal oxides, such as ZnO-, CuO-, and NiO-based nanosensors, are described using different methods (receptors of functionalization for molecular and ion recognition. These functionalized metal oxide surfaces with a specific receptor involve either a complex formation between the receptor and the analyte or an electrostatic interaction during the chemical sensing of analytes. Metal oxide nanostructures are considered revolutionary nanomaterials that have a specific surface for the immobilization of biomolecules with much needed orientation, good conformation and enhanced biological activity which further improve the sensing properties of nanosensors. Metal oxide nanostructures are associated with certain unique optical, electrical and molecular characteristics in addition to unique functionalities and surface charge features which shows attractive platforms for interfacing biorecognition elements with effective transducing properties for signal amplification. There is a great opportunity in the near future for metal oxide nanostructure-based miniaturization and the development of engineering sensor devices.

Metal Detector By Using PIC Microcontroller Interfacing With PC

OpenAIRE

Yin Min Theint; Myo Maung Maung; Hla Myo Tun

2015-01-01

Abstract This system proposes metal detector by using PIC microcontroller interfacing with PC. The system uses PIC microcontroller as the main controller whether the detected metal is ferrous metal or non-ferrous metal. Among various types of metal sensors and various types of metal detecting technologies concentric type induction coil sensor and VLF very low frequency metal detecting technology are used in this system. This system consists of two configurations Hardware configuration and Sof...

Reactivity of surface of metal oxide particles: from adsorption of ions to deposition of colloidal particles

International Nuclear Information System (INIS)

Lefevre, Gregory

2010-01-01

In this Accreditation to supervise research (HDR), the author proposes an overview of his research works in the field of chemistry. These works more particularly addressed the understanding of the surface reactivity of metal oxide particles and its implication on sorption and adherence processes. In a first part, he addresses the study of surface acidity-alkalinity: measurement of surface reactivity by acid-base titration, stability of metal oxides in suspension, effect of morphology on oxide-hydroxide reactivity. The second part addresses the study of sorption: reactivity of iron oxides with selenium species, sorption of sulphate ions on magnetite, attenuated total reflection infrared spectroscopy (ATR-IR). Adherence effects are addressed in the third part: development of an experimental device to study adherence in massive substrates, deposition of particles under turbulent flow. The last part presents a research project on the effect of temperature on ion sorption at solids/solutions interfaces, and on the adherence of metal oxide particles. The author gives his detailed curriculum, and indicates his various publications, teaching activities, research and administrative responsibilities

Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

International Nuclear Information System (INIS)

Schumacher, Daniel

2013-01-01

The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La 0.66 Sr 0.33 MnO 3 /SrTiO 3 (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La 0.5 Sr 0.5 MnO 3 (LSMO) and BaTiO 3 (BTO). A possible dependence of the interface near magnetic structure of La 1-x Sr x MnO 3 having a doping level x close to the ferromagnetic-antiferromagnetic phase

Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Daniel

2013-10-01

The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La{sub 0.66}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La{sub 0.5}Sr{sub 0.5}MnO{sub 3} (LSMO) and BaTiO{sub 3} (BTO). A possible dependence of the interface near magnetic structure of La{sub 1-x}Sr{sub x}MnO{sub 3} having a doping level x

In between matters, interfaces in complex oxides

NARCIS (Netherlands)

van Zalk, M.

2009-01-01

Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

In Between Matters : Interfaces in Complex Oxides

NARCIS (Netherlands)

van Zalk, M.

2009-01-01

Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

Engineering complex oxide interfaces for oxide electronics

NARCIS (Netherlands)

Roy, Saurabh

2015-01-01

A complex interplay of physics and chemistry in transition metal oxides determines their electronic, magnetic, and ferroic properties enabling a wide range of applications of these materials. BiFeO_3, a canonical multiferroic system exhibits the interesting feature of enhanced conductivity on

Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

Directory of Open Access Journals (Sweden)

Youhei Yamaji

2014-05-01

Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

Adhesion along metal-polymer interfaces during plastic deformation

NARCIS (Netherlands)

van Tijum, R.; Vellinga, W. P.; De Hosson, J. Th. M.

In this paper a numerical study is presented that concentrates on the influence of the interface roughness that develops during plastic deformation of a metal, on the work of adhesion and on the change of interface energy upon contact with a glassy polymer. The polymer coating is described with a

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

International Nuclear Information System (INIS)

Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

2015-01-01

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

First-principles investigation of the electronic states at perovskite and pyrite hetero-interfaces

KAUST Repository

Nazir, Safdar

2012-09-01

Oxide heterostructures are attracting huge interest in recent years due to the special functionalities of quasi two-dimensional quantum gases. In this thesis, the electronic states at the interface between perovskite oxides and pyrite compounds have been studied by first-principles calculations based on density functional theory. Optimization of the atomic positions are taken into account, which is considered very important at interfaces, as observed in the case of LaAlO3/SrTiO3. The creation of metallic states at the interfaces thus is explained in terms of charge transfer between the transition metal and oxygen atoms near the interface. It is observed that with typical thicknesses of at least 10-12 °A the gases still extend considerably in the third dimension, which essentially determines the magnitude of quantum mechanical effects. To overcome this problem, we propose incorporation of highly electronegative cations (such as Ag) in the oxides. A fundamental interest is also the thermodynamic stability of the interfaces due to the possibility of atomic intermixing in the interface region. Therefore, different cation intermixed configurations are taken into account for the interfaces aiming at the energetically stable state. The effect of O vacancies is also discussed for both polar and non-polar heterostructures. The interface metallicity is enhanced for the polar system with the creation of O vacancies, while the clean interface at the non-polar heterostructure exhibits an insulating state and becomes metallic in presence of O vacancy. The O vacancy formation energies are calculated and explained in terms of the increasing electronegativity and effective volume of A the side cation. Along with these, the electronic and magnetic properties of an interface between the ferromagnetic metal CoS2 and the non-magnetic semiconductor FeS2 is investigated. We find that this contact shows a metallic character. The CoS2 stays quasi half metallic at the interface, while the

Hydrogen incorporation and radiation induced dynamics in metal-oxide-silicon structures. A study using nuclear reaction analysis

International Nuclear Information System (INIS)

Briere, M.A.

1993-07-01

Resonant nuclear reaction analysis, using the 1 H( 15 N, αγ) 12 C reaction at 6.4 MeV, has been successfully applied to the investigation of hydrogen incorporation and radiation induced migration in metal-oxide-silicon structures. A preliminary study of the influence of processing parameters on the H content of thermal oxides, with and without gate material present, has been performed. It is found that the dominant source of hydrogen in Al gate devices and dry oxides is often contamination, likely in the form of adsorbed water vapor, formed upon exposure to room air after removal from the oxidation furnace. Concentrations of hydrogen in the bulk oxide as high as 3 10 20 cm -3 (Al gate), and as low as 1 10 18 cm -3 (poly Si-gate) have been observed. Hydrogen accumulation at the Si-SiO 2 interface has been reproducibly demonstrated for as-oxidized samples, as well as for oxides exposed to H 2 containing atmospheres during subsequent thermal processing. The migration of hydrogen, from the bulk oxide to the silicon-oxide interface during NRA, has been observed and intensively investigated. A direct correlation between the hydrogen content of the bulk oxide and the radiation generated oxide charges and interface states is presented. These data provide strong support for the important role of hydrogen in determining the radiation sensitivity of electronic devices. (orig.)

Origin of interface states and oxide charges generated by ionizing radiation

International Nuclear Information System (INIS)

Sah, C.T.

1976-01-01

The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO 2 -Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450 0 C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the /triple bond/Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

International Nuclear Information System (INIS)

Vogt, Patrick; Bierwagen, Oliver

2015-01-01

The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga 2 O 3 , In 2 O 3 , and SnO 2 on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga 2 O, In 2 O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO 2 , somewhat lower for In 2 O 3 , and the lowest for Ga 2 O 3 . Our findings can be generalized to further oxides that possess related sub-oxides

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Energy Technology Data Exchange (ETDEWEB)

Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

2017-02-15

Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

[The bonding mechanisms of base metals for metal-ceramic crown microstructure analysis of bonding agent and gold bond between porcelain and base metals].

Science.gov (United States)

Wang, C C; Hsu, C S

1996-06-01

The use of base metal alloys for porcelain fused to a metal crown and bridges has increased recently because of lower price, high hardness, high tensile strength and high elastic modulus. The addition of beryllium to base metal alloys increased fluidity and improved casting fitness. Beryllium also controlled surface oxidation and bonding strength. The bonding agent and gold bonding agent also affected the bonding strength between porcelain and metal alloys. Four commercially available ceramic base alloys were studied (two alloys contained beryllium element, another two did not). The purpose of this investigation was to study the microstructure between porcelain matrix, bonding agent and alloy matrix interfaces. A scanning electron micro-probe analyzer and energy dispersive X-ray spectroscopy (EDXS) were used to study the distribution of elements (Ni, Cr, Mo, Cu, O, Si, Sn, Al) in four base alloys. The following results were obtained: 1. The thickness of the oxidized layer of Rexillium III alloy and Unitbond alloy (contained beryllium) was thinner than Unibond alloy and Wiron 88 alloy (no beryllium). 2. The thickness of the oxidized layer of alloys in air (10 minutes and 30 minutes) was thinner in Unitbond (2.45 microns and 3.80 microns) and thicker in Wiron 88 (4.39 microns and 5.96 microns). 3. The thickness of the oxidized layer occurring for a duration of ten minutes (in vaccum) showed that the Rexillium III alloy was the thinnest (1.93 microns), and Wiron 88 alloy was the thickest (2.30 microns). But in thirty minutes (vacuum), Unitbond alloy was the thinnest (3.37 microns), and Wiron 88 alloy was the thickest (5.51 microns). 4. The intensity of Cr elements was increased obviously near the interface between Unitbond alloy, Wiron 88 alloy (no beryllium) and oxidized layer, but the intensity of Ni and Mo elements was slightly increased. The intensity of Cr element was not increased markedly between Rexillium III alloy, Unitbond alloy (beryllium) and oxidized

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

International Nuclear Information System (INIS)

Seveno, R.; Braud, A.; Gundel, H.W.

2005-01-01

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

PREPARATION OF METAL OXIDE POWDERS FROM METAL LOADED VERSATIC ACID

OpenAIRE

KAKIHATA, Takayuki; USAMI, Kensuke; YAMAMOTO, Hideki; SHIBATA, Junji

1998-01-01

A production process for metal oxide powders was developed using a solvent extraction method. Versatic Acid 10 and D2EHPA solutions containing copper, zinc and nickel were used for a precipitation-stripping process, where oxalic acid was added to the solution as a precipitation reagent.Copper, zinc and nickel oxalates were easily formed in an aqueous phase, and 99.9% of precipitation was obtained for each metal during this process. These metal oxalates were easily converted to metal oxides by...

Interface control scheme for computer high-speed interface unit

Science.gov (United States)

Ballard, B. K.

1975-01-01

Control scheme is general and performs for multiplexed and dedicated channels as well as for data-bus interfaces. Control comprises two 64-pin, dual in-line packages, each of which holds custom large-scale integrated array built with silicon-on-sapphire complementary metal-oxide semiconductor technology.

La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

Science.gov (United States)

Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

2017-11-01

Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

Experimental approaches for probing interfaces and grain boundaries

International Nuclear Information System (INIS)

Barrera, E.V.; Marcus, H.L.

1990-01-01

This paper focuses its attention on several research efforts performed by the authors and colleagues whose primary aim is probing interfacial and grain boundary properties. The first investigations described pertain to impurity segregation induced embrittlement which were modeled using thermodynamic considerations and were characterized by fracture testing using Auger electron spectroscopy (AES). Localized interface chemical characterization is essential in this research. The second investigation focuses on interface/impurity interaction determination. Extended X-Ray Absorption Fine Structure (EXAFS), a structure characterization tool, was used to determine the local environment of impurities in metal-impurity-metal laminate composites, where the impurities were in monolayer to submonolayer interface concentrations. The third study pertains to the interface fracture in metal-matrix (metal/metal oxide/graphite) composites where a correlation was made between electronic states and fracture path

Oxidation-resistant interface coatings for SiC/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Stinton, D.P.; Kupp, E.R.; Hurley, J.W.; Lowden, R.A. [Oak Ridge National Lab., TN (United States)] [and others

1996-08-01

The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

Surface- and interface-engineered heterostructures for solar hydrogen generation

Science.gov (United States)

Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

2018-04-01

Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

Corrosion at the Polymer-Metal Interface in Artificial Seawater Solutions

Directory of Open Access Journals (Sweden)

Amelia M. Anderson-Wile

2012-01-01

Full Text Available Polymer components for liquid sealing applications are employed in a variety of potentially corrosive environments, such as seawater. Frequently, corrosion of the metal is found at or adjacent to the rubber-metal interface rather than at a noncontact area. The corrosion of different metal alloys (titanium, bronze, nickel, aluminum, 316 stainless steel, and 4130 steel in combination with rubber O-rings (Buna-N and EPDM of varying internal diameters and cross-sectional shapes in seawater over a period of four years is described herein. The corrosion of some metals (i.e., 4130 stainless steel was found to be accelerated through interaction with Buna-N rubber O-rings. Theories to account for corrosion at the polymer-metal interface, especially with respect to polymer composition and O-ring size and shape, are discussed.

Decontamination of aqueous effluents containing metallic cations or anions by iron oxides under the action of a magnetic field

International Nuclear Information System (INIS)

Goncalves, M. A.; Camilo, R. L.; Cohen, V. H.; Yamaura, M.

1999-01-01

This work deals with a review of decontamination processes of aqueous effluents containing metallic cations and anions by using iron oxides as adsorber. Conditions to obtain the different iron oxides and adsorption capacities for cations and anions are presented and precipitation and/or adsorption mechanisms studies under the point of view of oxide-interface phenomena are described. Emphasis will be applied to the magnetite combined with inorganic exchanger or liquid extractants which magnetic properties has been used to enhance metals removal. Experimental results of a synthetic magnetite production and its adsorption capacity as a function of a magnetic field intensity are also showed. (authors)

SPP propagation in nonlinear glass-metal interface

KAUST Repository

Sagor, Rakibul Hasan; Alsunaidi, Mohammad A.; Ooi, Boon S.

2011-01-01

The non-linear propagation of Surface-Plasmon-Polaritons (SPP) in single interface of metal and chalcogenide glass (ChG) is considered. A time domain simulation algorithm is developed using the Finite Difference Time Domain (FDTD) method

Engineering Interfacial Energetics: A Novel Hybrid System of Metal Oxide Quantum Dots and Cobalt Complex for Photocatalytic Water Oxidation

International Nuclear Information System (INIS)

Niu, Fujun; Shen, Shaohua; Wang, Jian; Guo, Liejin

2016-01-01

Graphical abstract: A cobalt complex engineers the interfacial energetics of metal oxide quantum dots (n- or p-type) and electrolytes for highly efficient O_2 generation under visible light irradiation. - Highlights: • A noble-metal-free hybrid photocatalytic system using a single-site cobalt catalyst was developed for O_2 generation. • Considerable activity and excellent stability for O_2 production were achieved by this novel system. • CoSlp engineered the QDs/electrolyte interfacical energetics for efficient hole transfer. - Abstract: Here we reported a novel hybrid photocatalytic water oxidation system, containing metal oxide (n-Fe_2O_3 or p-Co_3O_4) quantum dots (QDs) as light harvester, a salophen cobalt(II) complex (CoSlp) as redox catalyst and persulfate (S_2O_8"2"−) as sacrificial electron acceptor, for oxygen generation from fully aqueous solution. The n-Fe_2O_3 QDs/CoSlp and p-Co_3O_4 QDs/CoSlp systems exhibited good O_2 evolution performances, giving turnover numbers (TONs) of ca. 33 and ca. 35 over CoSlp after visible light irradiation for 72 h, respectively. The excellent photocatalytic performance could be ascribed to the efficient hole transfer from QDs to CoSlp catalyst, leading to reduced photogenerated charge recombination, as well as the CoSlp engineered interfacial band bending of QDs, increasing the driving force or decreasing the energy barrier for hole transfer and then benefiting the following O_2 generation at the QDs/electrolyte interface. The present work successfully demonstrated a novel hybrid system for photocatalytic O_2 evolution from fully aqueous solution; and the essential role of cobalt complexes in engineering the interfacial energetics of semiconductors (n- or p-type) and electrolytes could be informative for designing efficient systems for solar water splitting.

Universal electrode interface for electrocatalytic oxidation of liquid fuels.

Science.gov (United States)

Liao, Hualing; Qiu, Zhipeng; Wan, Qijin; Wang, Zhijie; Liu, Yi; Yang, Nianjun

2014-10-22

Electrocatalytic oxidations of liquid fuels from alcohols, carboxylic acids, and aldehydes were realized on a universal electrode interface. Such an interface was fabricated using carbon nanotubes (CNTs) as the catalyst support and palladium nanoparticles (Pd NPs) as the electrocatalysts. The Pd NPs/CNTs nanocomposite was synthesized using the ethylene glycol reduction method. It was characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, voltammetry, and impedance. On the Pd NPs/CNTs nanocomposite coated electrode, the oxidations of those liquid fuels occur similarly in two steps: the oxidations of freshly chemisorbed species in the forward (positive-potential) scan and then, in the reverse scan (negative-potential), the oxidations of the incompletely oxidized carbonaceous species formed during the forward scan. The oxidation charges were adopted to study their oxidation mechanisms and oxidation efficiencies. The oxidation efficiency follows the order of aldehyde (formaldehyde) > carboxylic acid (formic acid) > alcohols (ethanol > methanol > glycol > propanol). Such a Pd NPs/CNTs nanocomposite coated electrode is thus promising to be applied as the anode for the facilitation of direct fuel cells.

Charge transport in metal oxide nanocrystal-based materials

Science.gov (United States)

Runnerstrom, Evan Lars

There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and

Growth of aluminum oxide on silicon carbide with an atomically sharp interface

DEFF Research Database (Denmark)

Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

2017-01-01

this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...... indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al2O3 with an atomically sharp Al2O3/SiC interface, also works in this case.......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...

Emergent magnetism at transition-metal-nanocarbon interfaces.

Science.gov (United States)

Al Ma'Mari, Fatma; Rogers, Matthew; Alghamdi, Shoug; Moorsom, Timothy; Lee, Stephen; Prokscha, Thomas; Luetkens, Hubertus; Valvidares, Manuel; Teobaldi, Gilberto; Flokstra, Machiel; Stewart, Rhea; Gargiani, Pierluigi; Ali, Mannan; Burnell, Gavin; Hickey, B J; Cespedes, Oscar

2017-05-30

Charge transfer at metallo-molecular interfaces may be used to design multifunctional hybrids with an emergent magnetization that may offer an eco-friendly and tunable alternative to conventional magnets and devices. Here, we investigate the origin of the magnetism arising at these interfaces by using different techniques to probe 3d and 5d metal films such as Sc, Mn, Cu, and Pt in contact with fullerenes and rf-sputtered carbon layers. These systems exhibit small anisotropy and coercivity together with a high Curie point. Low-energy muon spin spectroscopy in Cu and Sc-C 60 multilayers show a quick spin depolarization and oscillations attributed to nonuniform local magnetic fields close to the metallo-carbon interface. The hybridization state of the carbon layers plays a crucial role, and we observe an increased magnetization as sp 3 orbitals are annealed into sp 2 -π graphitic states in sputtered carbon/copper multilayers. X-ray magnetic circular dichroism (XMCD) measurements at the carbon K edge of C 60 layers in contact with Sc films show spin polarization in the lowest unoccupied molecular orbital (LUMO) and higher π*-molecular levels, whereas the dichroism in the σ*-resonances is small or nonexistent. These results support the idea of an interaction mediated via charge transfer from the metal and dz -π hybridization. Thin-film carbon-based magnets may allow for the manipulation of spin ordering at metallic surfaces using electrooptical signals, with potential applications in computing, sensors, and other multifunctional magnetic devices.

Influence of semiconductor/metal interface geometry in an EMR sensor

KAUST Repository

Sun, Jian

2013-02-01

The extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.

Adhesion and failure analysis of metal-polymer interface in flexible printed circuits boards

Science.gov (United States)

Park, Sanghee; Kim, Ye Chan; Choi, Kisuk; Chae, Heeyop; Suhr, Jonghwan; Nam, Jae-Do

2017-12-01

As device miniaturization in microelectronics is currently requested in the development of high performance device, which usually include highly-integrated metal-polyimide multilayer structures. A redistribution layer (RDL) process is currently emerging as one of the most advance fabrication techniques for on-chip interconnect and packaging. One of the major issues in this process is the poor adhesion of the metal-polyimide interfaces particularly in flexible circuit boards due to the flexibility and bendability of devices. In this study, low pressure O2 plasma treatment was investigated to improve the adhesion of metal-polyimide interfaces, using inductively coupled plasma (ICP) treatment. We identified that the adhesion of metal-polyimide interfaces was greatly improved by the surface roughness control providing 46.1 MPa of shear force in the ball shear test after O2 plasma treatment, compared 14.2 MPa without O2 plasma treatment. It was seemingly due to the fact that the adhesion in metal-polyimide interfaces was improved by a chemical conversion of C=O to C-O bonds and by a ring opening reaction of imide groups, which was confirmed with FT-IR analysis. In the finite element numerical analysis of metal-polyimide interfaces, the O2 plasma treated interface showed that the in-plane stress distribution and the vertical directional deformation agreed well with real failure modes in flexible circuits manufacturing.

Improved description of metal oxide stability

DEFF Research Database (Denmark)

Jauho, Thomas Stenbæk; Olsen, Thomas; Bligaard, Thomas

2015-01-01

The renormalized adiabatic PBE (rAPBE) method has recently been shown to comprise a significant improvement over the random phase approximation (RPA) for total energy calculations of simple solids and molecules. Here we consider the formation energies of 19 group I and II metal oxides and a few...... transition-metal oxides. The mean absolute error relative to experiments is 0.21 eV and 0.38 eV per oxygen atom for rAPBE and RPA, respectively, and thus the rAPBE method greatly improves the description of metal-oxygen bonds across a wide range of oxides. The failure of the RPA can be partly attributed...... to the lack of error cancellation between the correlation energy of the oxide on the one hand and the bulk metal and oxygen molecule on the other hand, which are all separately predicted much too negative by the RPA. We ascribe the improved performance of the rAPBE to its significantly better description...

Oxidation limited lifetime of Ni-Base metal foams in the temperature range 700-900 C

Energy Technology Data Exchange (ETDEWEB)

Chyrkin, Anton; Singheiser, Lorenz; Quadakkers, Willem Joseph [Forschungszentrum Juelich GmbH, IEF-2, Juelich (Germany); Schulze, Sebastian Leif; Bleck, Wolfgang [Department of Ferrous Metallurgy, RWTH Aachen University, Aachen (Germany); Piron-Abellan, Javier [Vallourec Mannesmann Tubes, Duesseldorf (Germany)

2010-09-15

INCONEL 625 metal foams produced from alloy powder by the slip-reaction-foam-sinter-process are tested in respect to cyclic oxidation behavior in air in the temperature range 700-900 C. The structure of the oxide scales formed on the foam particles is characterized using optical microscopy and SEM/EDX analysis. Main emphasis is put on studying the oxidation limited lifetimes of the foams as function of temperature and foam microstructure. It is shown that mechanical disintegration during long term oxidation at the highest test temperatures is caused by a critical depletion of the Cr content in the alloy as a result of the growth of the initially formed surface chromia layer. This results in chemical breakaway due to accelerated oxide growth of voluminous Ni-rich oxide on chromium exhausted alloy particles. Lifetime modeling based on calculation of Cr-depletion in the alloy at the oxide/metal interface of each individual foam particle using the DICTRA software is in good agreement with the experimentally determined values of the time to breakaway. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

2005-12-22

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

Enhanced Emission by Accumulated Charges at Organic/Metal Interfaces Generated during the Reverse Bias of Organic Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Soichiro Nozoe

2017-10-01

Full Text Available A high frequency rectangular alternating voltage was applied to organic light emitting diodes (OLEDs with the structure ITO/TPD/Alq3/Al and ITO/CoPc/Alq3/Al, where ITO is indium-tin-oxide, TPD is 4,4′-bis[N-phenyl-N-(m-tolylamino]biphenyl, CoPc is cobalt phthalocyanine, and Alq3 is Tris(8-quinolinolatoaluminum, and the effect on emission of the reverse bias was examined. The results reveal that the emission intensity under an alternating reverse-forward bias is greater than that under an alternating zero-forward bias. The difference in the emission intensity (∆I increased both for decreasing frequency and increasing voltage level of the reverse bias. In particular, the change in emission intensity was proportional to the voltage level of the reverse bias given the same frequency. To understand ΔI, this paper proposes a model in which an OLED works as a capacitor under reverse bias, where positive and negative charges accumulate on the metal/organic interfaces. In this model, the emission enhancement that occurs during the alternating reverse-forward bias is rationalized as a result of the charge accumulation at the organic/metal interfaces during the reverse bias, which possibly modulates the vacuum level shifts at the organic/metal interfaces to reduce both the hole injection barrier at the organic/ITO interface and the electron injection barrier at the organic/Al interface under forward bias.

Transport Physics Mechanisms in Thin-Film Oxides.

Science.gov (United States)

Tierney, Brian D.; Hjalmarson, Harold P.; Jacobs-Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew M.

A physics-based model of electron transport mechanisms in metal-insulating oxide-metal (M-I-M) systems is presented focusing on transport through the metal-oxide interfaces and in the bulk of the oxide. Interface tunneling, such as electron tunneling between the metal and the conduction band, or to oxide defect states, is accounted for via a WKB model. The effects of thermionic emission are also included. In the bulk of the oxide, defect-site hopping is dominant. Corresponding continuum calculations are performed for Ta2O5 M-I-M systems utilizing two different metal electrodes, e.g., platinum and tantalum. Such an asymmetrical M-I-M structure, applicable to resistive memory applications or oxide-based capacitors, reveals that the current can be either bulk or interface limited depending on the bias polarity and concentration of oxygen vacancy defects. Also, the dominance of some transport mechanisms over others is shown to be due to a complex interdependence between the vacancy concentration and bias polarity. Sandia National Laboratories is a multi-mission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Ammonia release method for depositing metal oxides

Energy Technology Data Exchange (ETDEWEB)

Silver, G.L.; Martin, F.S.

1993-12-31

A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

Interface Schottky barrier engineering via strain in metal-semiconductor composites

Science.gov (United States)

Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

2016-01-01

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

High temperature oxidation of metals: vacancy injection and consequences on the mechanical properties

International Nuclear Information System (INIS)

Perusin, S.

2004-11-01

The aim of this work is to account for the effects of the high temperature oxidation of metals on their microstructure and their mechanical properties. 'Model' materials like pure nickel, pure iron and the Ni-20Cr alloy are studied. Nickel foils have been oxidised at 1000 C on one side only in laboratory air, the other side being protected from oxidation by a reducing atmosphere. After the oxidation treatment, the unoxidized face was carefully examined by using an Atomic Force Microscope (AFM). Grain boundaries grooves were characterised and their depth were compared to the ones obtained on the same sample heat treated in the reducing atmosphere during the same time. They are found to be much deeper in the case of the single side oxidised samples. It is shown that this additional grooving is directly linked to the growth of the oxide scale on the opposite side and that it can be explained by the diffusion of the vacancies produced at the oxide scale - metal interface, across the entire sample through grain boundaries. Moreover, the comparison between single side oxidised samples and samples oxidised on both sides points out that voids in grain boundaries are only observed in this latter case proving the vacancies condensation in the metal when the two faces are oxidised. The role of the carbon content and the sample's geometry on this phenomenon is examined in detail. The diffusion of vacancies is coupled with the transport of oxygen so that a mechanism of oxygen transport by vacancies is suggested. The tensile tests realised at room temperature on nickel foils (bamboo microstructure) show that the oxide scale can constitute a barrier to the emergence of dislocations at the metal surface. Finally, the Ni-20Cr alloy is tested in tensile and creep tests between 25 and 825 C in oxidising or reducing atmospheres. (author)

Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

OpenAIRE

Wheeler, Damon Andreas

2013-01-01

SYNTHESIS, CHARACTERIZATION, AND ULTRAFAST DYNAMICS OF METAL, METAL OXIDE, AND SEMICONDUCTOR NANOMATERIALSABSTRACTThe optical properties of each of the three main classes of inorganic nanomaterials, metals, metal oxides, and semiconductors differ greatly due to the intrinsically different nature of the materials. These optical properties are among the most fascinating and useful aspects of nanomaterials with applications spanning cancer treatment, sensors, lasers, and solar cells. One techn...

First principles studies of complex oxide surfaces and interfaces

International Nuclear Information System (INIS)

Noguera, Claudine; Finocchi, Fabio; Goniakowski, Jacek

2004-01-01

Oxides enter our everyday life and exhibit an impressive variety of physical and chemical properties. The understanding of their behaviour, which is often determined by the electronic and atomic structures of their surfaces and interfaces, is a key question in many fields, such as geology, environmental chemistry, catalysis, thermal coatings, microelectronics, and bioengineering. In the last decade, first principles methods, mainly those based on the density functional theory, have been frequently applied to study complex oxide surfaces and interfaces, complementing the experimental observations. In this work, we discuss some of these contributions, with emphasis on several issues that are especially important when dealing with oxides: the local electronic structure at interfaces, and its connection with chemical reactivity; the charge redistribution and the bonding variations, in relation to screening properties; and the possibility of bridging the gap between model and real systems by taking into account the chemical environments and the effect of finite temperatures, and by performing simulations on systems of an adequate (large) size

Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

Science.gov (United States)

Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

1993-12-01

The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

X-ray Absorption Study of Graphene Oxide and Transition Metal Oxide Nanocomposites.

Science.gov (United States)

Gandhiraman, Ram P; Nordlund, Dennis; Javier, Cristina; Koehne, Jessica E; Chen, Bin; Meyyappan, M

2014-08-14

The surface properties of the electrode materials play a crucial role in determining the performance and efficiency of energy storage devices. Graphene oxide and nanostructures of 3d transition metal oxides were synthesized for construction of electrodes in supercapacitors, and the electronic structure and oxidation states were probed using near-edge X-ray absorption fine structure. Understanding the chemistry of graphene oxide would provide valuable insight into its reactivity and properties as the graphene oxide transformation to reduced-graphene oxide is a key step in the synthesis of the electrode materials. Polarized behavior of the synchrotron X-rays and the angular dependency of the near-edge X-ray absorption fine structures (NEXAFS) have been utilized to study the orientation of the σ and π bonds of the graphene oxide and graphene oxide-metal oxide nanocomposites. The core-level transitions of individual metal oxides and that of the graphene oxide nanocomposite showed that the interaction of graphene oxide with the metal oxide nanostructures has not altered the electronic structure of either of them. As the restoration of the π network is important for good electrical conductivity, the C K edge NEXAFS spectra of reduced graphene oxide nanocomposites confirms the same through increased intensity of the sp 2 -derived unoccupied states π* band. A pronounced angular dependency of the reduced sample and the formation of excitonic peaks confirmed the formation of extended conjugated network.

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Science.gov (United States)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

2017-02-01

This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

Application of metal oxide refractories for melting and casting reactive metals

International Nuclear Information System (INIS)

Jessen, N.C. Jr.; Holcombe, C.E. Jr.; Townsend, A.B.

1979-01-01

Extensive investigations have been conducted to develop metal oxide refractories for containment of molten uranium and uranium alloys. Since uranium and uranium alloys are readily susceptable to the formation of complex oxides, carbides, nitrides, intermetallic compounds, and suboxide reactions, severe problems exist for the production of quality castings. These contamination reactions are dependent on temperature, pressure, and molten metal interfacial reactions. The need for high purity metals to meet specification repeatedly has resulted in the development of improved metal oxide refractories and sophisticated furnace controls. Applications of Y 2 O 3 for use as a crucible and mold coating, precision molds and cores, and high temperature castable ceramics are discussed. Experimental results on melt impurity levels, thermal controls during melting, surface interactions and casting quality are presented

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

International Nuclear Information System (INIS)

Richard T. Scalettar; Warren E. Pickett

2005-01-01

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

Energy Technology Data Exchange (ETDEWEB)

Scalettar, Richard T.; Pickett, Warren E.

2004-07-01

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

Energy Technology Data Exchange (ETDEWEB)

Richard T. Scalettar; Warren E. Pickett

2005-08-02

This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

High-energy photoemission studies of oxide interfaces

Science.gov (United States)

Claessen, Ralph

2015-03-01

The interfaces of complex oxide heterostructures can host novel quantum phases not existing in the bulk of the constituents, with the high-mobility 2D electron system (2DES) in LaAlO3/SrTiO3 (LAO/STO) representing a prominent example. Despite extensive research the origin of the 2DES and its unusual properties - including the supposed coexistence of superconductivity and ferromagnetism - are still a matter of intense debate. Photoelectron spectroscopy, recently extended into the soft (SX-ARPES) and hard (HAXPES) X-ray regime, is a powerful method to provide detailed insight into the electronic structure of these heterostructures and, in particular, of the buried interface. This includes the identification of the orbital character of the 2DES as well as the determination of vital band structure information, such as band alignment, band bending, and even k-resolved band dispersions and Fermi surface topology. Moreover, resonant photoemission at the Ti L-edge reveals the existence of two different species of Ti 3d states, localized and itinerant, which can be distinguished and identified by their different resonance behavior. The role of oxygen vacancies is studied by controlled in-situ oxidation, which allows us to vary the composition from fully stoichiometric to strongly O-deficient. By comparison to free STO surfaces we can thus demonstrate that the metallicity of the heteointerfaces is intrinsic, i . e . it persists even in the absence of O defects. I will discuss our photoemission results on LAO/STO heterostructures in both (100) and (111) orientation as well as on the related system γ-Al2O3/STO(100), which also hosts a 2DES with an even higher mobility. Work in collaboration with J. Mannhart (MPI-FKF, Stuttgart), N. Pryds (TU Denmark), G. Rijnders (U Twente), S. Suga (U Osaka), M. Giorgoi (BESSY, HZB), W. Drube (DESY Photon Science), V.N. Strocov (Swiss Light Source), J. Denlinger (Advanced Light Source, LBNL), and T.-L. Lee (Diamond Light Source). Support by

Heat-induced redistribution of surface oxide in uranium

International Nuclear Information System (INIS)

Swissa, E.; Shamir, N.; Bloch, J.; Mintz, M.H.; Israel Atomic Energy Commission, Beersheba. Nuclear Research Center-Negev)

1990-01-01

The redistribution of oxygen and uranium metal at the vicinity of the metal-oxide interface of native and grown oxides due to vacuum thermal annealing was studied for uranium and uranium-chromium alloy using Auger depth profiling and metallographic techniques. It was found that uranium metal is segregating out through the uranium oxide layer for annealing temperatures above 450deg C. At the same time the oxide is redistributed in the metal below the oxide-metal interface in a diffusion like process. By applying a diffusion equation of a finite source, the diffusion coefficients for the process were obtained from the oxygen depth profiles measured for different annealing times. An Arrhenius like behavior was found for the diffusion coefficient between 400 and 800deg C. The activation energy obtained was E a =15.4±1.9 kcal/mole and the pre-exponential factor, D 0 =1.1x10 -8 cm 2 /s. An internal oxidation mechanism is proposed to explain the results. (orig.)

Heat-induced redistribution of surface oxide in uranium

Science.gov (United States)

Swissa, Eli; Shamir, Noah; Mintz, Moshe H.; Bloch, Joseph

1990-09-01

The redistribution of oxygen and uranium metal at the vicinity of the metal-oxide interface of native and grown oxides due to vacuum thermal annealing was studied for uranium and uranium-chromium alloy using Auger depth profiling and metallographic techniques. It was found that uranium metal is segregating out through the uranium oxide layer for annealing temperatures above 450°C. At the same time the oxide is redistributed in the metal below the oxide-metal interface in a diffusion like process. By applying a diffusion equation of a finite source, the diffusion coefficients for the process were obtained from the oxygen depth profiles measured for different annealing times. An Arrhenius like behavior was found for the diffusion coefficient between 400 and 800°C. The activation energy obtained was Ea = 15.4 ± 1.9 kcal/mole and the pre-exponential factor, D0 = 1.1 × 10 -8cm2/ s. An internal oxidation mechanism is proposed to explain the results.

Oxidation behaviour of metallic glass foams

Energy Technology Data Exchange (ETDEWEB)

Barnard, B.R. [Department of Materials Science and Engineering, 434 Dougherty Hall, University of Tennessee, Knoxville, TN 37996-2200 (United States)], E-mail: bbarnard@utk.edu; Liaw, P.K. [Department of Materials Science and Engineering, 434 Dougherty Hall, University of Tennessee, Knoxville, TN 37996-2200 (United States); Demetriou, M.D.; Johnson, W.L. [Department of Materials Science, Keck Laboratory, California Institute of Technology, Pasadena, CA 91125 (United States)

2008-08-15

In this study, the effects of porosity on the oxidation behaviour of bulk-metallic glasses were investigated. Porous Pd- and Fe-based bulk-metallic glass (BMG) foams and Metglas ribbons were studied. Oxidizing experiments were conducted at 70 deg. C, and around 80 deg. C below glass-transition temperatures, (T{sub g}s). Scanning-electron microscopy/energy-dispersive spectroscopy (SEM/EDS) studies revealed little evidence of oxidation at 70 deg. C. Specimens exhibited greater oxidation at T{sub g} - 80 deg. C. Oxides were copper-based for Pd-based foams, Fe-, Cr-, and Mo-based for Fe-based foams, and Co-based with borosilicates likely for the Metglas. Pd-based foams demonstrated the best oxidation resistance, followed by Metglas ribbons, followed by Fe-based foams.

Synthesis and functionalisation of metal and metal oxide nanoparticles for theranostics

OpenAIRE

Mundell, VJ

2013-01-01

Metal and metal oxide nanoparticles including calcium oxide, gold, and superparamagnetic iron oxide nanoparticles (SPIOs) were synthesised using a range of techniques including reduction, co-precipitation and spinning disc technology. SPIOs were primarily synthesised via a co-precipitation method using iron (II) chloride, iron (III) chloride and ammonia; a spinning disc reactor and gaseous ammonia were trialled successfully for scale up, producing spherical particles of 10-40 nm in diameter a...

Polymer-supported metals and metal oxide nanoparticles: synthesis, characterization, and applications

International Nuclear Information System (INIS)

Sarkar, Sudipta; Guibal, E.; Quignard, F.; SenGupta, A. K.

2012-01-01

Metal and metal oxide nanoparticles exhibit unique properties in regard to sorption behaviors, magnetic activity, chemical reduction, ligand sequestration among others. To this end, attempts are being continuously made to take advantage of them in multitude of applications including separation, catalysis, environmental remediation, sensing, biomedical applications and others. However, metal and metal oxide nanoparticles lack chemical stability and mechanical strength. They exhibit extremely high pressure drop or head loss in fixed-bed column operation and are not suitable for any flow-through systems. Also, nanoparticles tend to aggregate; this phenomenon reduces their high surface area to volume ratio and subsequently reduces effectiveness. By appropriately dispersing metal and metal oxide nanoparticles into synthetic and naturally occurring polymers, many of the shortcomings can be overcome without compromising the parent properties of the nanoparticles. Furthermore, the appropriate choice of the polymer host with specific functional groups may even lead to the enhancement of the properties of nanoparticles. The synthesis of hybrid materials involves two broad pathways: dispersing the nanoparticles (i) within pre-formed or commercially available polymers; and (ii) during the polymerization process. This review presents a broad coverage of nanoparticles and polymeric/biopolymeric host materials and the resulting properties of the hybrid composites. In addition, the review discusses the role of the Donnan membrane effect exerted by the host functionalized polymer in harnessing the desirable properties of metal and metal oxide nanoparticles for intended applications.

Method for converting uranium oxides to uranium metal

International Nuclear Information System (INIS)

Duerksen, W.K.

1988-01-01

A method for converting uranium oxide to uranium metal is described comprising the steps of heating uranium oxide in the presence of a reducing agent to a temperature sufficient to reduce the uranium oxide to uranium metal and form a heterogeneous mixture of a uranium metal product and oxide by-products, heating the mixture in a hydrogen atmosphere at a temperature sufficient to convert uranium metal in the mixture to uranium hydride, cooling the resulting uranium hydride-containing mixture to a temperature sufficient to produce a ferromagnetic transition in the uranium hydride, magnetically separating the cooled uranium hydride from the mixture, and thereafter heating the separated uranium hydride in an inert atmosphere to a temperature sufficient to convert the uranium hydride to uranium metal

Oxide Interfaces: emergent structure and dynamics

Energy Technology Data Exchange (ETDEWEB)

Clarke, Roy [Univ. of Michigan, Ann Arbor, MI (United States)

2016-08-16

This Final Report describes the scientific accomplishments that have been achieved with support from grant DE-FG02-06ER46273 during the period 6/1/2012– 5/31/2016. The overall goals of this program were focused on the behavior of epitaxial oxide heterostructures at atomic length scales (Ångstroms), and correspondingly short time-scales (fs -ns). The results contributed fundamentally to one of the currently most active frontiers in condensed matter physics research, namely to better understand the intricate relationship between charge, lattice, orbital and spin degrees of freedom that are exhibited by complex oxide heterostructures. The findings also contributed towards an important technological goal which was to achieve a better basic understanding of structural and electronic correlations so that the unusual properties of complex oxides can be exploited for energy-critical applications. Specific research directions included: probing the microscopic behavior of epitaxial interfaces and buried layers; novel materials structures that emerge from ionic and electronic reconfiguration at epitaxial interfaces; ultrahigh-resolution mapping of the atomic structure of heterointerfaces using synchrotron-based x-ray surface scattering, including direct methods of phase retrieval; using ultrafast lasers to study the effects of transient strain on coherent manipulation of multi-ferroic order parameters; and investigating structural ordering and relaxation processes in real-time.

Manganese Driven Carbon Oxidation along Oxic-Anoxic Interfaces in Forest Soils

Science.gov (United States)

Jones, M. E.; Keiluweit, M.

2017-12-01

Soils are the largest and most dynamic terrestrial carbon pool, storing a total of 3000 Pg of C - more than the atmosphere and biosphere combined. Because microbial oxidation determines the proportion of carbon that is either stored in the soil or emitted as climate active CO2, its rate directly impacts the global carbon cycle. Recently, a strong correlation between oxidation rates and manganese (Mn) content has been observed in forest soils globally, leading researchers conclude that Mn "is the single main factor governing" the oxidation of plant-derived particulate organic carbon (POC). Many soils are characterized by steep oxygen gradients, forming oxic-anoxic transitions that enable rapid redox cycling of Mn. Oxic-anoxic interfaces have been shown to promote fungal Mn oxidation and the formation of ligand-stabilized Mn(III), which ranks second only to superoxide as the most powerful oxidizing agent in the environment. Here we examined fungal Mn(III) formation along redox gradients in forest soils and their impact on POC oxidation rates. In both field and laboratory settings, oxic-anoxic transition zones showed the greatest Mn(III) concentrations, along with enhanced fungal growth, oxidative potential, production of soluble oxidation products, and CO2 production. Additional electrochemical and X-ray (micro)spectroscopic analyses indicated that oxic-anoxic interfaces represent ideal niches for fungal Mn(III) formation, owing to the ready supply of Mn(II), ligands and O2. Combined, our results suggest that POC oxidation relies on fungal Mn cycling across oxic-anoxic interfaces to produce Mn(III) based oxidants. Because predicted changes in the frequency and timing of precipitation dramatically alter soil moisture regimes in forest soils, understanding the mechanistic link between Mn cycling and carbon oxidation along oxic-anoxic interfaces is becoming increasingly important.

Understanding of catalysis on early transition metal oxide-based catalysts through exploration of surface structure and chemistry during catalysis using in-situ approaches

Energy Technology Data Exchange (ETDEWEB)

Tao, Franklin [Univ. of Kansas, Lawrence, KS (United States). Dept. of Chemical and Petroleum Engineering. Dept. of Chemistry

2015-09-14

Two main categories of heterogeneous catalysts are metal and metal oxide which catalyze 80% chemical reactions at solid-gas and solid-liquid interfaces. Metal oxide catalysts are much more complicated than metal catalysts. The reason is that the cations of the metal atoms could exhibit a few different oxidation states on surface of the same catalyst particle such as Co₃O₄ or change of their oxidation states under different reactive environments. For a metal catalyst, there is only one oxidation state typically. In addition, surface of a metal oxide can be terminated with multiple surface functionalities including O atoms with different binding configurations and OH group. For metal, only metal atoms are exposed typically. Obviously, the complication of surface chemistry and structure of a metal oxide makes studies of surface of an oxide catalyst very challenging. Due to the complication of surface of a meal oxide, the electronic and geometric structures of surface of a metal oxide and the exposed species have received enormous attention since oxide catalysts catalyze at least 1/3 chemical reactions in chemical and energy industries. Understanding of catalytic reactions on early transition metal oxide-based catalysts is fundamentally intriguing and of great practical interest in energy- and environment-related catalysis. Exploration of surface chemistry of oxide-based catalysts at molecular level during catalysis has remained challenging though it is critical in deeply understanding catalysis on oxide-based catalysts and developing oxide-based catalysts with high activity and selectivity. Thus, the overall objective of this project is to explore surface chemistry and structure of early transition metal oxide-based catalysts through in-situ characterization of surface of catalysts, measurements of catalytic performances, and then build an intrinsic correlation of surface chemistry and structure with their catalytic performances in a few

Effect of Nb2O5 doping on improving the thermo-mechanical stability of sealing interfaces for solid oxide fuel cells.

Science.gov (United States)

Zhang, Qi; Du, Xinhang; Tan, Shengwei; Tang, Dian; Chen, Kongfa; Zhang, Teng

2017-07-13

Nb 2 O 5 is added to a borosilicate sealing system to improve the thermo-mechanical stability of the sealing interface between the glass and Fe-Cr metallic interconnect (Crofer 22APU) in solid oxide fuel cells (SOFCs). The thermo-mechanical stability of the glass/metal interface is evaluated experimentally as well as by using a finite element analysis (FEA) method. The sealing glass doped with 4 mol.% Nb 2 O 5 shows the best thermo-mechanical stability, and the sealing couple of Crofer 22APU/glass/GDC (Gd 0.2 Ce 0.8 O 1.9 ) remains intact after 50 thermal cycles. In addition, all sealing couples show good joining after being held at 750 °C for 1000 h. Moreover, the possible mechanism on the thermo-mechanical stability of sealing interface is investigated in terms of stress-based and energy-based perspectives.

Study of transition metal oxides by photoelectron spectroscopy

International Nuclear Information System (INIS)

Rao, C.N.R.; Sarma, D.D.; Vasudevan, S.; Hegde, M.S.

1979-01-01

Systematics in the X-ray photoelectron spectra (X.p.e.s.) of Ti, V, Cr, Mn and Nb oxides with the metal ion in different oxidation states as well as of related series of mono-, sesqui- and di-oxides of the first row of transition metals have been investigated in detail. Core level binding energies, spin-orbit splittings and exchange splittings are found to exhibit interesting variations with the oxidation state of the metal or the nuclear charge. The 3d binding energies of the monoxides show a proportionality to Goodenough's (R - RC). Other aspects of interest in the study are the satellite structure and final state effects in the X.p.e.s. of the oxides, and identification of different valence states in oxides of the general formulae Mn02n-1 and M304. The nature of changes in the 3d bands of oxides undergoing metal-insulator transitions is also indicated. (author)

Energy-level alignment at metal-organic and organic-organic interfaces

NARCIS (Netherlands)

Veenstra, Sjoerd; Jonkman, H.T.

2003-01-01

This article reports on the electronic structure at interfaces found in organic semiconductor devices. The studied organic materials are C-60 and poly (para-phenylenevinylene) (PPV)-like oligomers, and the metals are polycrystalline Au and Ag. To measure the energy levels at these interfaces,

Metal ion binding to iron oxides

Science.gov (United States)

Ponthieu, M.; Juillot, F.; Hiemstra, T.; van Riemsdijk, W. H.; Benedetti, M. F.

2006-06-01

The biogeochemistry of trace elements (TE) is largely dependent upon their interaction with heterogeneous ligands including metal oxides and hydrous oxides of iron. The modeling of TE interactions with iron oxides has been pursued using a variety of chemical models. The objective of this work is to show that it is possible to model the adsorption of protons and TE on a crystallized oxide (i.e., goethite) and on an amorphous oxide (HFO) in an identical way. Here, we use the CD-MUSIC approach in combination with valuable and reliable surface spectroscopy information about the nature of surface complexes of the TE. The other objective of this work is to obtain generic parameters to describe the binding of the following elements (Cd, Co, Cu, Ni, Pb, and Zn) onto both iron oxides for the CD-MUSIC approach. The results show that a consistent description of proton and metal ion binding is possible for goethite and HFO with the same set of model parameters. In general a good prediction of almost all the collected experimental data sets corresponding to metal ion binding to HFO is obtained. Moreover, dominant surface species are in agreement with the recently published surface complexes derived from X-ray absorption spectroscopy (XAS) data. Until more detailed information on the structure of the two iron oxides is available, the present option seems a reasonable approximation and can be used to describe complex geochemical systems. To improve our understanding and modeling of multi-component systems we need more data obtained at much lower metal ion to iron oxide ratios in order to be able to account eventually for sites that are not always characterized in spectroscopic studies.

Method for converting uranium oxides to uranium metal

Science.gov (United States)

Duerksen, Walter K.

1988-01-01

A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

Interaction of terbium group metal oxides with carbon

International Nuclear Information System (INIS)

Vodop'yanov, A.G.; Baranov, S.V.; Kozhevnikov, G.N.

1990-01-01

Mechanism of carbothermal reduction of terbium group metals from oxides is investigated using thermodynamic and kinetic analyses. Interaction of metal oxides with carbon covers dissociation of metal oxides and reduction by carbon monoxide, which contribution into general reduction depends on CO pressure. Temperatures of reaction beginning for batch initial components at P=1.3x10 -4 and P CO =0.1 MPa and of formation of oxycarbide melts are determined

Interface Structure of MoO3 on Organic Semiconductors

Science.gov (United States)

White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

2016-01-01

We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

Nanocomposite of graphene and metal oxide materials

Science.gov (United States)

Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

2012-09-04

Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

Nanocomposite of graphene and metal oxide materials

Science.gov (United States)

Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

2013-10-15

Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

Catalytic activity of metall-like carbides in carbon oxide oxidation reaction

International Nuclear Information System (INIS)

Kharlamov, A.I.; Kosolapova, T.Ya.; Rafal, A.N.; Kirillova, N.V.

1980-01-01

Kinetics of carbon oxide oxidation upon carbides of hafnium, niobium, tantalum, molybdenum, zirconium and chromium is studied. Probable mechanism of the catalysts action is suggested. The established character of the change of the carbide catalytic activity is explained by the change of d-electron contribution to the metal-metal interaction

Metal oxide nanostructures as gas sensing devices

CERN Document Server

Eranna, G

2016-01-01

Metal Oxide Nanostructures as Gas Sensing Devices explores the development of an integrated micro gas sensor that is based on advanced metal oxide nanostructures and is compatible with modern semiconductor fabrication technology. This sensor can then be used to create a compact, low-power, handheld device for analyzing air ambience. The book first covers current gas sensing tools and discusses the necessity for miniaturized sensors. It then focuses on the materials, devices, and techniques used for gas sensing applications, such as resistance and capacitance variations. The author addresses the issues of sensitivity, concentration, and temperature dependency as well as the response and recovery times crucial for sensors. He also presents techniques for synthesizing different metal oxides, particularly those with nanodimensional structures. The text goes on to highlight the gas sensing properties of many nanostructured metal oxides, from aluminum and cerium to iron and titanium to zinc and zirconium. The final...

Kinetics and oxidation mechanisms of polycrystaline niobium

International Nuclear Information System (INIS)

Paschoal, J.O.A.

1979-01-01

The oxidation kinetics of annealed niobium was determined by thermogravimetric analysis between 450 and 800 0 C and for oxygen pressures varying from 20 to 700 mmHg. The oxidation kinetics of cold worked and/or irradiated niobium for temperatures between 500 and 700 0 C, with oxygen pressures varying from 100 to 300 mmHg. Was also determined. Using X-ray diffraction it was found that the oxide formed in the range of temperature and oxygen pressure considered in this research is γ-Nb 2 O 5 . Optical and scanning eletronic microscopy showed that for annealed niobium oxidized under 600 0 C there was formation of non-uniform oxide layers, containing cracks and pores, presenting very irregular metal/pentoxide interface. The presence of sub-oxide NbOsub(z) platelets was observed in this interface. This sub-oxide platelets where not observed in annealed oxidized niobium samples over 600 0 C; the oxide layers formed were compact. At 800 0 C and the beginning at 700 0 C the interfaces were quite regular. Through microhardness measurements for the metal near the metal/pentoxide interface, the formation of oxygen solid solution was found and the oxygen diffusion coefficient was calculated. The results showed that at 600 0 C the oxygen diffusion coefficient in cold worked niobium is three times larger than the value obtained for annealed niobium. The results suggest that the reaction between annealed niobium and oxygen undaer 600 0 C is controlled by reaction in interface where the oxide layers are not compacted, parcially due to Nb sub(z) platelets formation.(Author) [pt

Virtual half-metallicity at the CoS2/FeS2 interface induced by strain

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo

2013-01-01

of the interface structure is taken into account by atomic force minimization. We find that both Co and Fe are close to half-metallicity at the interface. Tensile strain is shown to strongly enhance the spin polarization so that a virtually half-metallic interface

Transition Metal Oxides for the Oxygen Reduction Reaction: Influence of the Oxidation States of the Metal and its Position on the Periodic Table.

Science.gov (United States)

Toh, Rou Jun; Sofer, Zdeněk; Pumera, Martin

2015-11-16

Electrocatalysts have been developed to meet the needs and requirements of renewable energy applications. Metal oxides have been well explored and are promising for this purpose, however, many reports focus on only one or a few metal oxides at once. Herein, thirty metal oxides, which were either commercially available or synthesized by a simple and scalable method, were screened for comparison with regards to their electrocatalytic activity towards the oxygen reduction reaction (ORR). We show that although manganese, iron, cobalt, and nickel oxides generally displayed the ability to enhance the kinetics of oxygen reduction under alkaline conditions compared with bare glassy carbon, there is no significant correlation between the position of a metal on the periodic table and the electrocatalytic performance of its respective metal oxides. Moreover, it was also observed that mixed valent (+2, +3) oxides performed the poorest, compared with their respective pure metal oxides. These findings may be of paramount importance in the field of renewable energy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced photoelectrochemical activity in all-oxide heterojunction devices based on correlated "metallic" oxides.

Science.gov (United States)

Apgar, Brent A; Lee, Sungki; Schroeder, Lauren E; Martin, Lane W

2013-11-20

n-n Schottky, n-n ohmic, and p-n Schottky heterojunctions based on TiO2 /correlated "metallic" oxide couples exhibit strong solar-light absorption driven by the unique electronic structure of the "metallic" oxides. Photovoltaic and photocatalytic responses are driven by hot electron injection from the "metallic" oxide into the TiO2 , enabling new modalities of operation for energy systems. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Virtual half-metallicity at the CoS2/FeS2 interface induced by strain

KAUST Repository

Nazir, Safdar

2013-01-01

Spin polarized ab initio calculations based on density functional theory are performed to investigate the electronic and magnetic properties of the interface between the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2. Relaxation of the interface structure is taken into account by atomic force minimization. We find that both Co and Fe are close to half-metallicity at the interface. Tensile strain is shown to strongly enhance the spin polarization so that a virtually half-metallic interface can be achieved, for comparably moderate strain. © 2012 The Royal Society of Chemistry.

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Fabrication of Arrays of Metal and Metal Oxide Nanotubes by Shadow Evaporation

NARCIS (Netherlands)

Dickey, Michael D.; Weiss, Emily A.; Smythe, Elizabeth J.; Chiechi, Ryan C.; Capasso, Federico; Whitesides, George M.

2008-01-01

This paper describes a simple technique for fabricating uniform arrays of metal and metal oxide nanotubes with controlled heights and diameters. The technique involves depositing material onto an anodized aluminum oxide (AAO) membrane template using a collimated electron beam evaporation source. The

Microstructural characteristics of high-temperature oxidation in nickel-base superalloy

International Nuclear Information System (INIS)

Khalid, F.A.

1997-01-01

Superalloys are used for aerospace and nuclear applications where they can withstand high-temperature and severe oxidizing conditions. High-temperature oxidation behavior of a nickel-base superalloy is examined using optical and scanning electron microscopical techniques. The morphology of the oxide layers developed is examined, and EDX microanalysis reveals diffusion of the elements across the oxide-metal interface. Evidence of internal oxidation is presented, and the role of structural defects is considered. The morphology of the oxide-metal interface formed in the specimens exposed in steam and air is examined to elucidate the mechanism of high-temperature oxidation

Current at Metal-Organic Interfaces

Science.gov (United States)

Kern, Klaus

2012-02-01

Charge transport through atomic and molecular constrictions greatly affects the operation and performance of organic electronic devices. Much of our understanding of the charge injection and extraction processes in these systems relays on our knowledge of the electronic structure at the metal-organic interface. Despite significant experimental and theoretical advances in studying charge transport in nanoscale junctions, a microscopic understanding at the single atom/molecule level is missing. In the present talk I will present our recent results to probe directly the nanocontact between single molecules and a metal electrode using scanning probe microscopy and spectroscopy. The experiments provide unprecedented microscopic details of single molecule and atom junctions and open new avenues to study quantum critical and many body phenomena at the atomic scale. Implications for energy conversion devices and carbon based nanoelectronics will also be discussed.

Spin-diffusion lengths in metals and alloys, and spin-flipping at metal/metal interfaces: an experimentalist's critical review

International Nuclear Information System (INIS)

Bass, Jack; Pratt, William P Jr

2007-01-01

In magnetoresistance (MR) studies of magnetic multilayers composed of combinations of ferromagnetic (F) and non-magnetic (N) metals, the magnetic moment (or related 'spin') of each conduction electron plays a crucial role, supplementary to that of its charge. While initial analyses of MR in such multilayers assumed that the direction of the spin of each electron stayed fixed as the electron transited the multilayer, we now know that this is true only in a certain limit. Generally, the spins 'flip' in a distance characteristic of the metal, its purity, and the temperature. They can also flip at F/N or N1/N2 interfaces. In this review we describe how to measure the lengths over which electron moments flip in pure metals and alloys, and the probability of spin-flipping at metallic interfaces. Spin-flipping within metals is described by a spin-diffusion length, l sf M , where the metal M F or N. Spin-diffusion lengths are the characteristic lengths in the current-perpendicular-to-plane (CPP) and lateral non-local (LNL) geometries that we focus upon in this review. In certain simple cases, l sf N sets the distance over which the CPP-MR and LNL-MR decrease as the N-layer thickness (CPP-MR) or N-film length (LNL) increases, and l sf F does the same for increase of the CPP-MR with increasing F-layer thickness. Spin-flipping at M1/M2 interfaces can be described by a parameter, δ M1/M2 , which determines the spin-flipping probability, P = 1-exp(-δ). Increasing δ M1/M2 usually decreases the MR. We list measured values of these parameters and discuss the limitations on their determinations. (topical review)

Application of a mixed metal oxide catalyst to a metallic substrate

Science.gov (United States)

Sevener, Kathleen M. (Inventor); Lohner, Kevin A. (Inventor); Mays, Jeffrey A. (Inventor); Wisner, Daniel L. (Inventor)

2009-01-01

A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system.

Novel routes to metal nanoparticles : electrodeposition and reactions at liquid-liquid interfaces

OpenAIRE

Johans, Christoffer

2003-01-01

This thesis considers the nucleation and growth, synthesis, and catalytic application of metallic nanoparticles at liquid|liquid interfaces. It comprises five publications, a previously unpublished synthesis of polymer coated palladium nanoparticles, and an introduction to the relevant literature. Three publications are concerned with electrodeposition of metal nanoparticles at liquid|liquid interfaces. One publication and the results presented here consider the synthesis of silver and pallad...

Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun; Sonde, Sushant; Banerjee, Sanjay K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 (United States); Kwon, Hyuk-Min [SK Hynix, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1 (Korea, Republic of); Orzali, Tommaso; Kim, Tae-Woo, E-mail: twkim78@gmail.com [SEMATECH Inc., 257 Fuller Rd #2200, Albany, New York 12203 (United States); Kim, Dae-Hyun [Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 702-701 (Korea, Republic of)

2015-11-02

In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}), which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

Science.gov (United States)

Sadasivam, Sridhar; Ye, Ning; Feser, Joseph P.; Charles, James; Miao, Kai; Kubis, Tillmann; Fisher, Timothy S.

2017-02-01

Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to the interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi2-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used "mixing rules" to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi2-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with

Dynamic Sensing of Localized Corrosion at the Metal/Solution Interface

Directory of Open Access Journals (Sweden)

Shenhao Chen

2012-04-01

Full Text Available A Mach-Zehnder interferometer is employed to detect localized corrosion at the metal/solution interface in the potentiodynamic sweep of the iron electrode in solutions. During the electrochemical reactions, local variations of the electrolyte’s refractive index, which correlate with the concentration of dissolved species, change the optical path length (OPL of the object beam when the beam passes through the electrolyte. The distribution of the OPL difference was obtained to present the concentration change of the metal ions visually, which enable direct evidence of corrosion processes. The OPL difference distribution shows localized and general corrosion during the anodic dissolution of the iron electrode in solutions with and without chloride ions, respectively. This method provides an approach for dynamic detection of localized corrosion at the metal/solution interface.

Gas phase deposition of oxide and metal-oxide coatings on fuel particles

International Nuclear Information System (INIS)

Patokin, A.P.; Khrebtov, V.L.; Shirokov, B.M.

2008-01-01

Production processes and properties of oxide (Al 2 O 3 , ZrO 2 ) and metal-oxide (Mo-Al 2 O 3 , Mo-ZrO 2 , W-Al 2 O 3 , W-ZrO 2 ) coatings on molybdenum substrates and uranium dioxide fuel particles were investigated. It is shown that the main factors that have an effect on the deposition rate, density, microstructure and other properties of coatings are the deposition temperature, the ratio of H 2 and CO 2 flow rates, the total reactor pressure and the ratio of partial pressures of corresponding metal chlorides during formation of metal-oxide coatings

Oxide-supported metal clusters: models for heterogeneous catalysts

International Nuclear Information System (INIS)

Santra, A K; Goodman, D W

2003-01-01

Understanding the size-dependent electronic, structural and chemical properties of metal clusters on oxide supports is an important aspect of heterogeneous catalysis. Recently model oxide-supported metal catalysts have been prepared by vapour deposition of catalytically relevant metals onto ultra-thin oxide films grown on a refractory metal substrate. Reactivity and spectroscopic/microscopic studies have shown that these ultra-thin oxide films are excellent models for the corresponding bulk oxides, yet are sufficiently electrically conductive for use with various modern surface probes including scanning tunnelling microscopy (STM). Measurements on metal clusters have revealed a metal to nonmetal transition as well as changes in the crystal and electronic structures (including lattice parameters, band width, band splitting and core-level binding energy shifts) as a function of cluster size. Size-dependent catalytic reactivity studies have been carried out for several important reactions, and time-dependent catalytic deactivation has been shown to arise from sintering of metal particles under elevated gas pressures and/or reactor temperatures. In situ STM methodologies have been developed to follow the growth and sintering kinetics on a cluster-by-cluster basis. Although several critical issues have been addressed by several groups worldwide, much more remains to be done. This article highlights some of these accomplishments and summarizes the challenges that lie ahead. (topical review)

Oxidation of vanadium metal in oxygen plasma and their characterizations

Science.gov (United States)

Sharma, Rabindar Kumar; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2015-09-01

In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10-2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

Science.gov (United States)

Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

2017-10-17

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

Synthesis of metal-metal oxide catalysts and electrocatalysts using a metal cation adsorption/reduction and adatom replacement by more noble ones

Science.gov (United States)

Adzic, Radoslav; Vukmirovic, Miomir; Sasaki, Kotaro

2010-04-27

The invention relates to platinum-metal oxide composite particles and their use as electrocatalysts in oxygen-reducing cathodes and fuel cells. The invention particularly relates to methods for preventing the oxidation of the platinum electrocatalyst in the cathodes of fuel cells by use of these platinum-metal oxide composite particles. The invention additionally relates to methods for producing electrical energy by supplying such a fuel cell with an oxidant, such as oxygen, and a fuel source, such as hydrogen. The invention also relates to methods of making the metal-metal oxide composites.

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Science.gov (United States)

Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

2017-12-01

III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

Atomistic calculations of interface elastic properties in noncoherent metallic bilayers

International Nuclear Information System (INIS)

Mi Changwen; Jun, Sukky; Kouris, Demitris A.; Kim, Sung Youb

2008-01-01

The paper describes theoretical and computational studies associated with the interface elastic properties of noncoherent metallic bicrystals. Analytical forms of interface energy, interface stresses, and interface elastic constants are derived in terms of interatomic potential functions. Embedded-atom method potentials are then incorporated into the model to compute these excess thermodynamics variables, using energy minimization in a parallel computing environment. The proposed model is validated by calculating surface thermodynamic variables and comparing them with preexisting data. Next, the interface elastic properties of several fcc-fcc bicrystals are computed. The excess energies and stresses of interfaces are smaller than those on free surfaces of the same crystal orientations. In addition, no negative values of interface stresses are observed. Current results can be applied to various heterogeneous materials where interfaces assume a prominent role in the systems' mechanical behavior

Hydrogen storage evaluation based on investigations of the catalytic properties of metal/metal oxides in electrospun carbon fibers

Energy Technology Data Exchange (ETDEWEB)

Im, Ji Sun; Lee, Young-Seak [Department of Fine Chemical Engineering and Chemistry, Chungnam National University, Daejeon 305-764 (Korea); Park, Soo-Jin [Department of Chemistry, Inha University, Incheon 402-751 (Korea); Kim, Taejin [Core Technology Research Center for Fuel Cell, Jeollabuk-do 561-844 (Korea)

2009-05-15

In order to investigate the catalytic capacity of metals and metal oxides based on electrospun carbon fibers for improving hydrogen storage, electrospinning and heat treatments were carried out to obtain metal/metal oxide-embedded carbon fibers. Although the fibers were treated with the same activation procedure, they had different pore structures, due to the nature of the metal oxide. When comparing the catalytic capacity of metal and metal oxide, metal exhibits better performance as a catalyst for the improvement of hydrogen storage, when considering the hydrogen storage system. When a metal oxide with an m.p. lower than the temperature of heat treatment was used, the metal oxide was changed to metal during the heat treatment, developing a micropore structure. The activation process produced a high specific surface area of up to 2900 m{sup 2}/g and a pore volume of up to 2.5 cc/g. The amount of hydrogen adsorption reached approximately 3 wt% at 100 bar and room temperature. (author)

Meso-/Nanoporous Semiconducting Metal Oxides for Gas Sensor Applications

Directory of Open Access Journals (Sweden)

Nguyen Duc Hoa

2015-01-01

Full Text Available Development and/or design of new materials and/or structures for effective gas sensor applications with fast response and high sensitivity, selectivity, and stability are very important issues in the gas sensor technology. This critical review introduces our recent progress in the development of meso-/nanoporous semiconducting metal oxides and their applications to gas sensors. First, the basic concepts of resistive gas sensors and the recent synthesis of meso-/nanoporous metal oxides for gas sensor applications are introduced. The advantages of meso-/nanoporous metal oxides are also presented, taking into account the crystallinity and ordered/disordered porous structures. Second, the synthesis methods of meso-/nanoporous metal oxides including the soft-template, hard-template, and temple-free methods are introduced, in which the advantages and disadvantages of each synthetic method are figured out. Third, the applications of meso-/nanoporous metal oxides as gas sensors are presented. The gas nanosensors are designed based on meso-/nanoporous metal oxides for effective detection of toxic gases. The sensitivity, selectivity, and stability of the meso-/nanoporous gas nanosensors are also discussed. Finally, some conclusions and an outlook are presented.

Correlation of mechanical properties with nondestructive evaluation of babbitt metal/bronze composite interface

Science.gov (United States)

Ijiri, Y.; Liaw, P. K.; Taszarek, B. J.; Frohlich, S.; Gungor, M. N.

1988-09-01

Interfaces of the babbitt metal-bronze composite were examined ultrasonically and were fractured using the Chalmers test method. It was found that the ultrasonic results correlated with the bond strength, the ductility, and the degree of bonding at the tested interface. Specifically, high ultrasonic reflection percentages were associated with low bond strength, low ductility, and low percentages of bonded regions. The fracture mechanism in the bonded area of the babbitt-bronze interface is related to the presence of the intermetallic compound, Cu6Sn5, at the interface. It is suggested that the non-destructive ultrasonic technique can detect the bond integrity of babbitted metals.

First Principles Simulation of a Ceramic/ Metal Interface with Misfit

International Nuclear Information System (INIS)

Benedek, R.; Alavi, A.; Seidman, D. N.; Yang, L. H.; Muller, D. A.; Woodward, C.

2000-01-01

The relaxed atomic structure of a model ceramic/metal interface, {222}MgO/Cu , is simulated, including lattice constant mismatch, using first principles local-density functional theory plane wave pseudopotential methods. The 399-atom computational unit cell contains 36 O and 49 Cu atoms per layer in accordance with the 7/6 ratio of MgO to Cu lattice constants. The atomic layers on both sides of the interface warp to optimize the local bonding. The interface adhesive energy is calculated. The interface electronic structure is found to vary appreciably with the local environment. (c) 2000 The American Physical Society

Surface half-metallicity of half-Heusler compound FeCrSe and interface half-metallicity of FeCrSe/GaP

Energy Technology Data Exchange (ETDEWEB)

Khalaf Al-zyadi, Jabbar M., E-mail: jabbar_alzyadi@yahoo.com [Department of Physics, College of Education for Pure Sciences, University of Basrah (Iraq); Jolan, Mudhahir H. [Department of Physics, College of Education for Pure Sciences, University of Basrah (Iraq); Yao, Kai-Lun, E-mail: klyao@mail.hust.edu.cn [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); International Center of Materials Physics, Chinese Academy of Sciences, Shenyang 110015 (China)

2016-04-01

Recent studies showed that half-Heusler FeCrSe exhibits half-metallic ferromagnetism (Huang et al. [20]). In this paper, we investigate extensively the electronic, magnetic, and half-metallic properties of the half-Heusler alloy FeCrSe (111) and (001) surfaces and the interface with GaP (111) substrate by using the first-principles calculations within the density functional theory. The atomic density of states demonstrates that the half-me tallicity verified in the bulk FeCrSe is maintained at the CrSe-terminated (001) and Se-terminated (111) surfaces, but lost at both Cr- and Fe-terminated (111) surfaces and the Fe-terminated (001) surface. Alternatively, for the interface of FeCrSe/GaP (111), the bulk half-metallicity is destroyed at Se–P configuration while Se–Ga interface and subinterface show nearly 100% spin polarization. Moreover, the calculated interfacial adhesion energies exhibit that Se–Ga shape is more stable than the Se–P one. The calculated magnetic moments of Se, Ga at the Se–Ga (111) interface and P at the Se–P (111) interface increase with respect to the corresponding bulk values while the atomic magnetic moment of Se atom at the Se–P (111) interface decreases. We also notice that the magnetic moments of subinterface Fe at both Se–Ga and Se–P (111) interfaces decrease compared to the bulk values. - Highlights: • The half-metallicity verified in the bulk FeCrSe is kept at the CrSe-terminated (001) and Se-terminated (111) surfaces. • The calculated interfacial adhesion energies exhibit that Se–Ga shape is more stable than Se–P. • The magnetic moments of Se, Ga and P atoms at the interface increase. • The Se–Ga interface shows nearly 100% spin polarization.

Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

CERN Document Server

Tarnavskij, G A; Obrekht, M S

2001-01-01

One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

Science.gov (United States)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

Uranium oxidation: characterization of oxides formed by reaction with water

International Nuclear Information System (INIS)

Fuller, E.L. Jr.; Smyrl, N.R.; Condon, J.B.; Eager, M.H.

1983-01-01

Three different uranium oxide samples have been characterized with respect to the different preparation techniques. Results show that the water reaction with uranium metal occurs cyclically forming laminar layers of oxide which spall off due to the strain at the oxide/metal interface. Single laminae are released if liquid water is present due to the prizing penetration at the reaction zone. The rate of reaction of water with uranium is directly proportional to the amount of adsorbed water on the oxide product. Rapid transport is effected through the open hydrous oxide product. Dehydration of the hydrous oxide irreversibly forms a more inert oxide which cannot be rehydrated to the degree that prevails in the original hydrous product of uranium oxidation with water. 27 figures

Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

International Nuclear Information System (INIS)

Fadida, S.; Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.

2014-01-01

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al 2 O 3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

Energy Technology Data Exchange (ETDEWEB)

Hegde, Ganesh, E-mail: ghegde@purdue.edu; Povolotskyi, Michael; Kubis, Tillmann; Klimeck, Gerhard, E-mail: gekco@purdue.edu [Network for Computational Nanotechnology (NCN), Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Boykin, Timothy [Department of Electrical and Computer Engineering, University of Alabama, Huntsville, Alabama (United States)

2014-03-28

Semi-empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper, an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal nanostructures, and metallic interface systems are described. Part I of this paper describes the development and validation of the new TB model. The new model incorporates intra-atomic diagonal and off-diagonal elements for implicit self-consistency and greater transferability across bonding environments. The dependence of the on-site energies on strain has been obtained by appealing to the Moments Theorem that links closed electron paths in the system to energy moments of angular momentum resolved local density of states obtained ab initio. The model matches self-consistent density functional theory electronic structure results for bulk face centered cubic metals with and without strain, metallic alloys, metallic interfaces, and metallic nanostructures with high accuracy and can be used in predictive electronic structure and transport problems in metallic systems at realistically extended length scales.

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

International Nuclear Information System (INIS)

Hegde, Ganesh; Povolotskyi, Michael; Kubis, Tillmann; Klimeck, Gerhard; Boykin, Timothy

2014-01-01

Semi-empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper, an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal nanostructures, and metallic interface systems are described. Part I of this paper describes the development and validation of the new TB model. The new model incorporates intra-atomic diagonal and off-diagonal elements for implicit self-consistency and greater transferability across bonding environments. The dependence of the on-site energies on strain has been obtained by appealing to the Moments Theorem that links closed electron paths in the system to energy moments of angular momentum resolved local density of states obtained ab initio. The model matches self-consistent density functional theory electronic structure results for bulk face centered cubic metals with and without strain, metallic alloys, metallic interfaces, and metallic nanostructures with high accuracy and can be used in predictive electronic structure and transport problems in metallic systems at realistically extended length scales

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

Science.gov (United States)

Hegde, Ganesh; Povolotskyi, Michael; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

2014-03-01

Semi-empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper, an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal nanostructures, and metallic interface systems are described. Part I of this paper describes the development and validation of the new TB model. The new model incorporates intra-atomic diagonal and off-diagonal elements for implicit self-consistency and greater transferability across bonding environments. The dependence of the on-site energies on strain has been obtained by appealing to the Moments Theorem that links closed electron paths in the system to energy moments of angular momentum resolved local density of states obtained ab initio. The model matches self-consistent density functional theory electronic structure results for bulk face centered cubic metals with and without strain, metallic alloys, metallic interfaces, and metallic nanostructures with high accuracy and can be used in predictive electronic structure and transport problems in metallic systems at realistically extended length scales.

Reduction of metal oxides in metal carbide fusion superheated with plasma

Energy Technology Data Exchange (ETDEWEB)

Hedai, L

1981-01-01

A significant part of metals is capable of binding a high quantity of carbon in the form of carbide. The carbide fusion produced as a result of smelting and superheating, metal carbides with the use of plasma might be a medium to be utilized for the reduction of different metal oxides, whilst also the original carbide structure of the metal carbides will be reduced to metallic structure. The experiments conducted by making use of plasma equipment, of 20, 55 and 100 kW performances are described. On the basis of the results of the experiments performed, the following statements are to be made. The oxide reductions taking place in the metal carbide fusion might also be carried out in open-hearth furnaces, because reducing atmosphere is not necessitated during this procedure. The quantity of energy required is basically defined by the energy needed for smelting and superheating the metal carbide. The method for producing the metal described may be mainly applied for the allied production of high-purity steels as well as for that of ferro-alloys.

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

International Nuclear Information System (INIS)

Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

2014-01-01

This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

Metal Oxide/Graphene Composites for Supercapacitive Electrode Materials.

Science.gov (United States)

Jeong, Gyoung Hwa; Baek, Seungmin; Lee, Seungyeol; Kim, Sang-Wook

2016-04-05

Graphene composites with metal or metal oxide nanoparticles have been extensively investigated owing to their potential applications in the fields of fuel cells, batteries, sensing, solar cells, and catalysis. Among them, much research has focused on supercapacitor applications and have come close to realization. Composites include monometal oxides of cobalt, nickel, manganese, and iron, as well as their binary and ternary oxides. In addition, their morphological control and hybrid systems of carbon nanotubes have also been investigated. This review presents the current trends in research on metal oxide/graphene composites for supercapacitors. Furthermore, methods are suggested to improve the properties of electrochemical capacitor electrodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

International Nuclear Information System (INIS)

Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

2008-01-01

The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

Self-assembled monolayers on metal oxides : applications in nanotechnology

NARCIS (Netherlands)

Yildirim, O.

2010-01-01

The thesis describes the use of phosph(on)ate-based self-assembled monolayers (SAMs) to modify and pattern metal oxides. Metal oxides have interesting electronic and magnetic properties such as insulating, semiconducting, metallic, ferromagnetic etc. and SAMs can tailor the surface properties. FePt

A microstuctural study on accelerated zirconium alloy oxidation

International Nuclear Information System (INIS)

Sohn, Seung Bum; Oh, Seung Jun; Jang, Jung Nam; Kim, Yong Soo; Jung, Yong Hwan; Baek, Jong Hyuk; Park, Jung Yong

2005-01-01

It has been reported that the effect of thermal redistribution of hydrides across the zirconium metaloxide interface, coupled with thermal feedback on the metal-oxide interface, is a dominating factor in the accelerated oxidation in zirconium alloys cladding PWR fuel. Basically this influence determines characteristic of oxide layer. Influence estimation for corrosion oxide layer due to hydrogen / hydride carried out because of investigation on the kinetic on accelerated oxidation due to hydride precipitation was preceded. Generally, it is known that ZrO 2 tetragonal layer structures play an important role as a barrier layer. So analysing the ZrO 2 monoclinic and tetragonal structure distribution is our main aim. Especially, this study focused on the hydride effects. In other words, the difference of crystal structure distribution between pre-hydrided and without hydrided specimen is just expected results. Experimental results of microstructure at zirconium metal-oxide interface through TEM and EBSD analysis was confirmed

Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

DEFF Research Database (Denmark)

Zhang, Zhenbo; Pantleon, Wolfgang

2017-01-01

Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were...

A general approach to mesoporous metal oxide microspheres loaded with noble metal nanoparticles

KAUST Repository

Jin, Zhao; Xiao, Manda; Bao, Zhihong; Wang, Peng; Wang, Jianfang

2012-01-01

Catalytic microspheres: A general approach is demonstrated for the facile preparation of mesoporous metal oxide microspheres loaded with noble metal nanoparticles (see TEM image in the picture). Among 18 oxide/noble metal catalysts, TiO 2/0.1 mol Pd microspheres showed the highest turnover frequency in NaBH 4 reduction of 4-nitrophenol (see picture). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A general approach to mesoporous metal oxide microspheres loaded with noble metal nanoparticles

KAUST Repository

Jin, Zhao

2012-04-26

Catalytic microspheres: A general approach is demonstrated for the facile preparation of mesoporous metal oxide microspheres loaded with noble metal nanoparticles (see TEM image in the picture). Among 18 oxide/noble metal catalysts, TiO 2/0.1 mol Pd microspheres showed the highest turnover frequency in NaBH 4 reduction of 4-nitrophenol (see picture). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

KAUST Repository

Nazir, S.; Schwingenschlö gl, Udo

2010-01-01

semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment

Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfaces

NARCIS (Netherlands)

Alon, Hadas; Garrick, Rachel; Pujari, Sidharam P.; Toledano, Tal; Sinai, Ofer; Kedem, Nir; Bendikov, Tatyana; Baio, Joe E.; Weidner, Tobias; Zuilhof, Han; Cahen, David; Kronik, Leeor; Sukenik, Chaim N.; Vilan, Ayelet

2018-01-01

Molecular monolayers at metal/semiconductor heterointerfaces affect electronic energy level alignment at the interface by modifying the interface's electrical dipole. On a free surface, the molecular dipole is usually manipulated by means of substitution at its external end. However, at an interface

Transmission electron microscopy characterization of Zircaloy-4 and ZIRLO™ oxide layers

International Nuclear Information System (INIS)

Gabory, Benoit de; Motta, Arthur T.; Wang, Ke

2015-01-01

Waterside corrosion of zirconium alloy nuclear fuel cladding varies markedly from one alloy to another. In addition, for a given alloy, the corrosion rate evolves during the corrosion process, most notably when the oxide loses its stability at the oxide transition. In an effort to understand the mechanism resulting in the variations of corrosion rate observed at the oxide transition, oxide layers formed on Zircaloy-4 and ZIRLO™ in high temperature water autoclave environments, and archived before and after the transition, are characterized using transmission electron microscopy. The study characterizes and compares the oxide morphology in both alloys at different times during the corrosion process, in an effort to understand the oxide growth mechanism for these alloys. Results show that the oxide is mainly composed of monoclinic ZrO 2 , with a preponderance of columnar oxide grains which extend to the oxide/metal interface. The oxide formed right after the transition has occurred, exhibits a 150 nm-wide layer of small equiaxed grains with high tetragonal oxide fraction. This layer has a similar morphology and structure as the first oxide layer formed (observed near the oxide/water interface). A study of the oxygen-rich region near the oxide/metal interface reveals a complex structure of different phases at different stages of corrosion. The interface exhibits an intermediate layer, identified as ZrO, a discontinuous layer of “blocky” Zr 3 O grains embedded in the ZrO layer, and a suboxide layer corresponding to an oxygen saturated solid solution in the metal matrix side. The thickness of this interfacial layer decreased markedly at the transition. Hydrides are also observed in that region, with a definite orientation relationship with the matrix. The observations of the oxide/metal interface are qualitatively similar for the two alloys but quantitatively different. The incorporation of intermetallic precipitates into the oxide layer is also studied, and

Pure and multi metal oxide nanoparticles: synthesis, antibacterial and cytotoxic properties.

Science.gov (United States)

Stankic, Slavica; Suman, Sneha; Haque, Francia; Vidic, Jasmina

2016-10-24

Th antibacterial activity of metal oxide nanoparticles has received marked global attention as they can be specifically synthesized to exhibit significant toxicity to bacteria. The importance of their application as antibacterial agents is evident keeping in mind the limited range and effectiveness of antibiotics, on one hand, and the plethora of metal oxides, on the other, along with the propensity of nanoparticles to induce resistance being much lower than that of antibiotics. Effective inhibition against a wide range of bacteria is well known for several nano oxides consisting of one metal (Fe 3 O 4 , TiO 2 , CuO, ZnO), whereas, research in the field of multi-metal oxides still demands extensive exploration. This is understandable given that the relationship between physicochemical properties and biological activity seems to be complex and difficult to generalize even for metal oxide nanoparticles consisting of only one metal component. Also, despite the broad scope that metal oxide nanoparticles have as antibacterial agents, there arise problems in practical applications taking into account the cytotoxic effects. In this respect, the consideration of polymetallic oxides for biological applications becomes even greater since these can provide synergetic effects and unify the best physicochemical properties of their components. For instance, strong antibacterial efficiency specific of one metal oxide can be complemented by non-cytotoxicity of another. This review presents the main methods and technological advances in fabrication of nanostructured metal oxides with a particular emphasis to multi-metal oxide nanoparticles, their antibacterial effects and cytotoxicity.

Pure and multi metal oxide nanoparticles: synthesis, antibacterial and cytotoxic properties

Directory of Open Access Journals (Sweden)

Slavica Stankic

2016-10-01

Full Text Available Abstract Th antibacterial activity of metal oxide nanoparticles has received marked global attention as they can be specifically synthesized to exhibit significant toxicity to bacteria. The importance of their application as antibacterial agents is evident keeping in mind the limited range and effectiveness of antibiotics, on one hand, and the plethora of metal oxides, on the other, along with the propensity of nanoparticles to induce resistance being much lower than that of antibiotics. Effective inhibition against a wide range of bacteria is well known for several nano oxides consisting of one metal (Fe3O4, TiO2, CuO, ZnO, whereas, research in the field of multi-metal oxides still demands extensive exploration. This is understandable given that the relationship between physicochemical properties and biological activity seems to be complex and difficult to generalize even for metal oxide nanoparticles consisting of only one metal component. Also, despite the broad scope that metal oxide nanoparticles have as antibacterial agents, there arise problems in practical applications taking into account the cytotoxic effects. In this respect, the consideration of polymetallic oxides for biological applications becomes even greater since these can provide synergetic effects and unify the best physicochemical properties of their components. For instance, strong antibacterial efficiency specific of one metal oxide can be complemented by non-cytotoxicity of another. This review presents the main methods and technological advances in fabrication of nanostructured metal oxides with a particular emphasis to multi-metal oxide nanoparticles, their antibacterial effects and cytotoxicity.

Metal Phosphate-Supported Pt Catalysts for CO Oxidation

Directory of Open Access Journals (Sweden)

Xiaoshuang Qian

2014-12-01

Full Text Available Oxides (such as SiO2, TiO2, ZrO2, Al2O3, Fe2O3, CeO2 have often been used to prepare supported Pt catalysts for CO oxidation and other reactions, whereas metal phosphate-supported Pt catalysts for CO oxidation were rarely reported. Metal phosphates are a family of metal salts with high thermal stability and acid-base properties. Hydroxyapatite (Ca10(PO46(OH2, denoted as Ca-P-O here also has rich hydroxyls. Here we report a series of metal phosphate-supported Pt (Pt/M-P-O, M = Mg, Al, Ca, Fe, Co, Zn, La catalysts for CO oxidation. Pt/Ca-P-O shows the highest activity. Relevant characterization was conducted using N2 adsorption-desorption, inductively coupled plasma (ICP atomic emission spectroscopy, X-ray diffraction (XRD, transmission electron microscopy (TEM, CO2 temperature-programmed desorption (CO2-TPD, X-ray photoelectron spectroscopy (XPS, and H2 temperature-programmed reduction (H2-TPR. This work furnishes a new catalyst system for CO oxidation and other possible reactions.

Interface structure and mechanics between graphene and metal substrates: a first-principles study

Science.gov (United States)

Xu, Zhiping; Buehler, Markus J.

2010-12-01

Graphene is a fascinating material not only for technological applications, but also as a test bed for fundamental insights into condensed matter physics due to its unique two-dimensional structure. One of the most intriguing issues is the understanding of the properties of graphene and various substrate materials. In particular, the interfaces between graphene and metal substrates are of critical importance in applications of graphene in integrated electronics, as thermal materials, and in electromechanical devices. Here we investigate the structure and mechanical interactions at a graphene-metal interface through density functional theory (DFT)-based calculations. We focus on copper (111) and nickel (111) surfaces adhered to a monolayer of graphene, and find that their cohesive energy, strength and electronic structure correlate directly with their atomic geometry. Due to the strong coupling between open d-orbitals, the nickel-graphene interface has a much stronger cohesive energy with graphene than copper. We also find that the interface cohesive energy profile features a well-and-shoulder shape that cannot be captured by simple pair-wise models such as the Lennard-Jones potential. Our results provide a detailed understanding of the interfacial properties of graphene-metal systems, and help to predict the performance of graphene-based nanoelectronics and nanocomposites. The availability of structural and energetic data of graphene-metal interfaces could also be useful for the development of empirical force fields for molecular dynamics simulations.

Effect of oxygen on decomposition of nitrous oxide over various metal oxide catalysts

International Nuclear Information System (INIS)

Satsuma, Atsushi; Maeshima, Hajime; Watanabe, Kiyoshi; Hattori, Tadashi

2001-01-01

The inhibitory effect of oxygen on decomposition of nitrous oxide over various metal oxide catalysts was investigated. The activity of nitrous oxide decomposition significantly decreased over CuO, Co 3 O 4 , NiO, Fe 2 O 3 , SnO 2 , In 2 O 3 and Cr 2 O 3 by reversible adsorption of oxygen onto the active sites. On the contrary to this, there was no or small change in the activity of TiO 2 , Al 2 O 3 , MgO, La 2 O 3 and CaO. A good correlation was observed between the degree of inhibition and the heat of formation of metal oxides. On the basis of kinetic model, the reduction of catalytic activity in the presence of oxygen was rationalized with the strength of oxygen adsorption on the metal oxide surface. (author)

Spinel-based coatings for metal supported solid oxide fuel cells

DEFF Research Database (Denmark)

Stefan, Elena; Neagu, Dragos; Blennow Tullmar, Peter

2017-01-01

Metal supports and metal supported half cells developed at DTU are used for the study of a solution infiltration approach to form protective coatings on porous metal scaffolds. The metal particles in the anode layer, and sometimes even in the support may undergo oxidation in realistic operating...... conditions leading to severe cell degradation. Here, a controlled oxidation of the porous metal substrate and infiltration of Mn and/or Ce nitrate solutions are applied for in situ formation of protective coatings. Our approach consists of scavenging the FeCr oxides formed during the controlled oxidation...... into a continuous and well adhered coating. The effectiveness of coatings is the result of composition and structure, but also of the microstructure and surface characteristics of the metal scaffolds....

Fundamental studies of ceramic/metal interfacial reactions at elevated temperatures.

Energy Technology Data Exchange (ETDEWEB)

McDeavitt, S. M.; Billings, G. W.; Indacochea, J. E.

2000-12-14

This work characterizes the interfaces resulting from exposing oxide and non-oxide ceramic substrates to zirconium metal and stainless steel-zirconium containing alloys. The ceramic/metal systems together were preheated at about 600 C and then the temperatures were increased to the test maximum temperature, which exceeded 1800 C, in an atmosphere of high purity argon. Metal samples were placed onto ceramic substrates, and the system was heated to elevated temperatures past the melting point of the metallic specimen. After a short stay at the peak temperature, the system was cooled to room temperature and examined. The chemical changes across the interface and other microstructural developments were analyzed with energy dispersive spectroscopy (EDS). This paper reports on the condition of the interfaces in the different systems studied and describes possible mechanisms influencing the microstructure.

Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

International Nuclear Information System (INIS)

Galloway, H.C.

1995-12-01

Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

Comparison of properties of silver-metal oxide electrical contact materials

Directory of Open Access Journals (Sweden)

Ćosović V.

2012-01-01

Full Text Available Changes in physical properties such as density, porosity, hardness and electrical conductivity of the Ag-SnO2 and Ag-SnO2In2O3 electrical contact materials induced by introduction of metal oxide nanoparticles were investigated. Properties of the obtained silver-metal oxide nanoparticle composites are discussed and presented in comparison to their counterparts with the micro metal oxide particles as well as comparable Ag-SnO2WO3 and Ag-ZnO contact materials. Studied silvermetal oxide composites were produced by powder metallurgy method from very fine pure silver and micro- and nanoparticle metal oxide powders. Very uniform microstructures were obtained for all investigated composites and they exhibited physical properties that are comparable with relevant properties of equivalent commercial silver based electrical contact materials. Both Ag-SnO2 and Ag- SnO2In2O3 composites with metal oxide nanoparticles were found to have lower porosity, higher density and hardness than their respective counterparts which can be attributed to better dispersion hardening i.e. higher degree of dispersion of metal oxide in silver matrix.

Molecular Computational Investigation of Electron Transfer Kinetics across Cytochrome-Iron Oxide Interfaces

International Nuclear Information System (INIS)

Kerisit, Sebastien N.; Rosso, Kevin M.; Dupuis, Michel; Valiev, Marat

2007-01-01

The interface between electron transfer proteins such as cytochromes and solid phase mineral oxides is central to the activity of dissimilatory-metal reducing bacteria. A combination of potential-based molecular dynamics simulations and ab initio electronic structure calculations are used in the framework of Marcus' electron transfer theory to compute elementary electron transfer rates from a well-defined cytochrome model, namely the small tetraheme cytochrome (STC) from Shewanella oneidensis, to surfaces of the iron oxide mineral hematite (a-Fe2O3). Room temperature molecular dynamics simulations show that an isolated STC molecule favors surface attachment via direct contact of hemes I and IV at the poles of the elongated axis, with electron transfer distances as small as 9 Angstroms. The cytochrome remains attached to the mineral surface in the presence of water and shows limited surface diffusion at the interface. Ab initio electronic coupling matrix element (VAB) calculations of configurations excised from the molecular dynamics simulations reveal VAB values ranging from 1 to 20 cm-1, consistent with nonadiabaticity. Using these results, together with experimental data on the redox potential of hematite and hemes in relevant cytochromes and calculations of the reorganization energy from cluster models, we estimate the rate of electron transfer across this model interface to range from 1 to 1000 s-1 for the most exothermic driving force considered in this work, and from 0.01 to 20 s-1 for the most endothermic. This fairly large range of electron transfer rates highlights the sensitivity of the rate upon the electronic coupling matrix element, which is in turn dependent on the fluctuations of the heme configuration at the interface. We characterize this dependence using an idealized bis-imidazole heme to compute from first principles the VAB variation due to porphyrin ring orientation, electron transfer distance, and mineral surface termination. The electronic

Selective propene oxidation on mixed metal oxide catalysts

International Nuclear Information System (INIS)

James, David William

2002-01-01

Selective catalytic oxidation processes represent a large segment of the modern chemical industry and a major application of these is the selective partial oxidation of propene to produce acrolein. Mixed metal oxide catalysts are particularly effective in promoting this reaction, and the two primary candidates for the industrial process are based on iron antimonate and bismuth molybdate. Some debate exists in the literature regarding the operation of these materials and the roles of their catalytic components. In particular, iron antimonate catalysts containing excess antimony are known to be highly selective towards acrolein, and a variety of proposals for the enhanced selectivity of such materials have been given. The aim of this work was to provide a direct comparison between the behaviour of bismuth molybdate and iron antimonate catalysts, with additional emphasis being placed on the component single oxide phases of the latter. Studies were also extended to other antimonate-based catalysts, including cobalt antimonate and vanadium antimonate. Reactivity measurements were made using a continuous flow microreactor, which was used in conjunction with a variety of characterisation techniques to determine relationships between the catalytic behaviour and the properties of the materials. The ratio of Fe/Sb in the iron antimonate catalyst affects the reactivity of the system under steady state conditions, with additional iron beyond the stoichiometric value being detrimental to the acrolein selectivity, while extra antimony provides a means of enhancing the selectivity by decreasing acrolein combustion. Studies on the single antimony oxides of iron antimonate have shown a similarity between the reactivity of 'Sb 2 O 5 ' and FeSbO 4 , and a significant difference between these and the Sb 2 O 3 and Sb 2 O 4 phases, implying that the mixed oxide catalyst has a surface mainly comprised of Sb 5+ . The lack of reactivity of Sb 2 O 4 implies a similarity of the surface with

Atomistic Modeling of Corrosion Events at the Interface between a Metal and Its Environment

Directory of Open Access Journals (Sweden)

Christopher D. Taylor

2012-01-01

Full Text Available Atomistic simulation is a powerful tool for probing the structure and properties of materials and the nature of chemical reactions. Corrosion is a complex process that involves chemical reactions occurring at the interface between a material and its environment and is, therefore, highly suited to study by atomistic modeling techniques. In this paper, the complex nature of corrosion processes and mechanisms is briefly reviewed. Various atomistic methods for exploring corrosion mechanisms are then described, and recent applications in the literature surveyed. Several instances of the application of atomistic modeling to corrosion science are then reviewed in detail, including studies of the metal-water interface, the reaction of water on electrified metallic interfaces, the dissolution of metal atoms from metallic surfaces, and the role of competitive adsorption in controlling the chemical nature and structure of a metallic surface. Some perspectives are then given concerning the future of atomistic modeling in the field of corrosion science.

Theoretical description of metal/oxide interfacial properties: The case of MgO/Ag(001)

Energy Technology Data Exchange (ETDEWEB)

Prada, Stefano [Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via R. Cozzi, 53, 20125 Milano (Italy); Giordano, Livia, E-mail: livia.giordano@mater.unimib.it [Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via R. Cozzi, 53, 20125 Milano (Italy); Pacchioni, Gianfranco [Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via R. Cozzi, 53, 20125 Milano (Italy); Goniakowski, Jacek [CNRS-Sorbonne Universités UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)

2016-12-30

Highlights: • Characteristics of Ag-supported MgO(100) films are studied with different DFT functionals. • All approaches predict a similar nature of supported pristine and oxygen-deficient films. • Interface distances and adhesion are particularly sensitive to the choice of the approximation. • Satisfactory matching with the experiment is obtained with the DFT-optB88 functional. • Charge transfer, work function and vacancy characteristics are little influenced by the method. - Abstract: We compare the performances of different DFT functionals applied to ultra-thin MgO(100) films supported on the Ag(100) surface, a prototypical system of a weakly interacting oxide/metal interface, extensively studied in the past. Beyond semi-local DFT-GGA approximation, we also use the hybrid DFT-HSE approach to improve the description of the oxide electronic structure. Moreover, to better account for the interfacial adhesion, we include the van de Waals interactions by means of either the semi-empirical force fields by Grimme (DFT-D2 and DFT-D2*) or the self-consistent density functional optB88-vdW. We compare and discuss the results on the structural, electronic, and adhesion characteristics of the interface as obtained for pristine and oxygen-deficient Ag-supported MgO films in the 1–4 ML thickness range.

The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.

Science.gov (United States)

Wang, Z B; Helander, M G; Greiner, M T; Lu, Z H

2010-05-07

The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as the thermal distribution of delocalized states in the semiconductor tends to dominate device characteristics. However, in the case of organic semiconductors the weak intermolecular interactions results in highly localized electronic states, such that the thermal distribution of carriers in the metal may also influence device characteristics. In this work we demonstrate that the Fermi-Dirac distribution of carriers in the metal has a much more significant impact on charge injection at metal/organic interfaces than has previously been assumed. An injection model which includes the effect of the Fermi-Dirac electron distribution was proposed. This model has been tested against experimental data and was found to provide a better physical description of charge injection. This finding indicates that the thermal distribution of electronic states in the metal should, in general, be considered in the study of metal/organic interfaces.

Comparison of interface structure of BCC metallic (Fe, V and Nb) films on MgO (100) substrate

Energy Technology Data Exchange (ETDEWEB)

Du, J.L. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Zhang, L.Y. [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 (China); Fu, E.G., E-mail: efu@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Ding, X., E-mail: dingxd@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 (China); Yu, K.Y., E-mail: kyyu@cup.edu.cn [Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249 (China); Wang, Y.G. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Wang, Y.Q.; Baldwin, J.K. [Experimental Physical Sciences Directorate, Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Wang, X.J. [State Key Laboratory of Advanced Optical Communication Systems and Networks, Peking University, Beijing 100871 (China); Xu, P. [Department of Chemistry, Harbin Institute of Technology, Harbin, Heilongjiang, 150001 (China)

2017-07-15

Highlights: • The difference of BCC metal/MgO(100) interface configuration with various lattice mismatches is identified by experiments and simulations in terms of dislocations and work of separation. • The strength of bonds along interface is found to be the fundamental factor to determine the interface configurations between BCC metal and MgO substrate. • The combination of experiments and simulations shows that the O-atop model is the actual match type between BCC metal and MgO substrate. - Abstract: This study systematically investigates the interface structure of three body-centered-cubic (BCC) metallic (Fe, V and Nb) films grown on MgO(100) substrates through experiments and simulations. Orientation relationships of their interfaces with the different lattice mismatches exhibit cube-on-cube configurations. The misfit dislocations at these three interfaces exhibit different characteristics. High resolution TEM (HRTEM), combined with first principle calculations, demonstrates the O-atop match type between metal atoms and MgO substrates for the first time. The fundamental mechanism in determining the interface configuration is discussed in terms of the work of separation and delocalization of atomic charge density.

Simulation of Magnetic Phenomena at Realistic Interfaces

KAUST Repository

Grytsyuk, Sergiy

2016-01-01

(4d) and ferromagnetic 3d-metal interfaces and their dependences on aspects such as interdiffusion, surface oxidation, thin film thickness and lattice mismatch. We find that changes of structural details strongly alter the electronic states, which

Ionic conductivity in oxide heterostructures: the role of interfaces

Directory of Open Access Journals (Sweden)

Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

2010-01-01

Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

Synthesis of vertically aligned metal oxide nanostructures

KAUST Repository

Roqan, Iman S.; Flemban, Tahani H.

2016-01-01

ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc

Formation of iron oxides from acid mine drainage and magnetic separation of the heavy metals adsorbed iron oxides

Energy Technology Data Exchange (ETDEWEB)

Kwon, Hee Won; Kim, Jeong Jin; Kim, Young Hun [Andong National University, Andong (Korea, Republic of); Ha, Dong Woo [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

2016-03-15

There are a few thousand abandoned metal mines in South Korea. The abandoned mines cause several environmental problems including releasing acid mine drainage (AMD), which contain a very high acidity and heavy metal ions such as Fe, Cu, Cd, Pb, and As. Iron oxides can be formed from the AMD by increasing the solution pH and inducing precipitation. Current study focused on the formation of iron oxide in an AMD and used the oxide for adsorption of heavy metals. The heavy metal adsorbed iron oxide was separated with a superconducting magnet. The duration of iron oxide formation affected on the type of mineral and the degree of magnetization. The removal rate of heavy metal by the adsorption process with the formed iron oxide was highly dependent on the type of iron oxide and the solution pH. A high gradient magnetic separation (HGMS) system successfully separated the iron oxide and harmful heavy metals.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Theory of the Spin Galvanic Effect at Oxide Interfaces

Science.gov (United States)

Seibold, Götz; Caprara, Sergio; Grilli, Marco; Raimondi, Roberto

2017-12-01

The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO3 and SrTiO3 . Here, we analyze the SGE for oxide interfaces within a three-band model for the Ti t2 g orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to providing an appropriate description of the experimental data.

Preliminary results on the chemical characterisation of the cathode nickel--emissive layer interface in oxide cathodes

International Nuclear Information System (INIS)

Jenkins, S.N.; Barber, D.K.; Whiting, M.J.; Baker, M.A.

2003-01-01

In cathode ray tube (CRT) thermionic oxide cathodes, the nickel-oxide interface properties are key to understanding the mechanisms of operation. At the elevated operational temperatures, free barium is formed at the interface by the reaction of reducing activators, from the nickel alloy, with barium oxide. The free barium diffuses to the outer surface of the oxide providing a low work function electron-emitting surface. However, during cathode life an interface layer grows between the nickel alloy and oxide, comprised of reaction products. The interfacial layer sets limits on the cathode performance and useful operational lifetime by inhibiting the barium reducing reaction. This paper discusses sample preparation procedures for exposure of the interface and the use of several surface and bulk analytical techniques to study interface layer formation. SEM, AES and SIMS data are presented, which provide preliminary insight into the mechanisms operating during the cathode's lifetime. There is evidence that the activator elements in the nickel alloy base, Al and Mg, are able to diffuse to the surface of the oxide during activation and ageing and that these elements are enriched at the interface after accelerated life

Electrochemistry of hydrous oxide films

International Nuclear Information System (INIS)

Burke, L.D.; Lyons, M.E.G.

1986-01-01

The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

International Nuclear Information System (INIS)

Herderick, Edward D; Padture, Nitin P; Polomoff, Nicholas A; Huey, Bryan D

2010-01-01

A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO 3 -Au and Au-PbTiO 3 -Au. This method entails electrodeposition of segmented nanowires of Au-TiO 2 -Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO 2 segments into BaTiO 3 or PbTiO 3 segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

Method for continuous synthesis of metal oxide powders

Science.gov (United States)

Berry, David A.; Haynes, Daniel J.; Shekhawat, Dushyant; Smith, Mark W.

2015-09-08

A method for the rapid and continuous production of crystalline mixed-metal oxides from a precursor solution comprised of a polymerizing agent, chelated metal ions, and a solvent. The method discharges solution droplets of less than 500 .mu.m diameter using an atomizing or spray-type process into a reactor having multiple temperature zones. Rapid evaporation occurs in a first zone, followed by mixed-metal organic foam formation in a second zone, followed by amorphous and partially crystalline oxide precursor formation in a third zone, followed by formation of the substantially crystalline mixed-metal oxide in a fourth zone. The method operates in a continuous rather than batch manner and the use of small droplets as the starting material for the temperature-based process allows relatively high temperature processing. In a particular embodiment, the first zone operates at 100-300.degree. C., the second zone operates at 300-700.degree. C., and the third operates at 700-1000.degree. C., and fourth zone operates at at least 700.degree. C. The resulting crystalline mixed-metal oxides display a high degree of crystallinity and sphericity with typical diameters on the order of 50 .mu.m or less.

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

2010-01-01

In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

Heavy metal oxide glasses as gamma rays shielding material

International Nuclear Information System (INIS)

Kaur, Preet; Singh, Devinder; Singh, Tejbir

2016-01-01

The gamma rays shielding parameters for heavy metal oxide glasses and concrete samples are comparable. However, the transparent nature of glasses provides additional feature to visualize inside the shielding material. Hence, different researchers had contributed in computing/measuring different shielding parameters for different configurations of heavy metal oxide glass systems. In the present work, a detailed study on different heavy metal (_5_6Ba, _6_4Gd, _8_2Pb, _8_3Bi) oxide glasses has been presented on the basis of different gamma rays shielding parameters as reported by different researchers in the recent years. It has been observed that among the selected heavy metal oxide glass systems, Bismuth based glasses provide better gamma rays shielding. Hence, Bismuth based glasses can be better substitute to concrete walls at nuclear reactor sites and nuclear labs.

Heavy metal oxide glasses as gamma rays shielding material

Energy Technology Data Exchange (ETDEWEB)

Kaur, Preet; Singh, Devinder; Singh, Tejbir, E-mail: dr.tejbir@gmail.com

2016-10-15

The gamma rays shielding parameters for heavy metal oxide glasses and concrete samples are comparable. However, the transparent nature of glasses provides additional feature to visualize inside the shielding material. Hence, different researchers had contributed in computing/measuring different shielding parameters for different configurations of heavy metal oxide glass systems. In the present work, a detailed study on different heavy metal ({sub 56}Ba, {sub 64}Gd, {sub 82}Pb, {sub 83}Bi) oxide glasses has been presented on the basis of different gamma rays shielding parameters as reported by different researchers in the recent years. It has been observed that among the selected heavy metal oxide glass systems, Bismuth based glasses provide better gamma rays shielding. Hence, Bismuth based glasses can be better substitute to concrete walls at nuclear reactor sites and nuclear labs.

Bioaccessibility of micron-sized powder particles of molybdenum metal, iron metal, molybdenum oxides and ferromolybdenum--Importance of surface oxides.

Science.gov (United States)

Mörsdorf, Alexander; Odnevall Wallinder, Inger; Hedberg, Yolanda

2015-08-01

The European chemical framework REACH requires that hazards and risks posed by chemicals, including alloys and metals, that are manufactured, imported or used in different products (substances or articles) are identified and proven safe for humans and the environment. Metals and alloys need hence to be investigated on their extent of released metals (bioaccessibility) in biologically relevant environments. Read-across from available studies may be used for similar materials. This study investigates the release of molybdenum and iron from powder particles of molybdenum metal (Mo), a ferromolybdenum alloy (FeMo), an iron metal powder (Fe), MoO2, and MoO3 in different synthetic body fluids of pH ranging from 1.5 to 7.4 and of different composition. Spectroscopic tools and cyclic voltammetry have been employed to characterize surface oxides, microscopy, light scattering and nitrogen absorption for particle characterization, and atomic absorption spectroscopy to quantify released amounts of metals. The release of molybdenum from the Mo powder generally increased with pH and was influenced by the fluid composition. The mixed iron and molybdenum surface oxide of the FeMo powder acted as a barrier both at acidic and weakly alkaline conditions. These findings underline the importance of the surface oxide characteristics for the bioaccessibility of metal alloys. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.

Systematic study of metal-insulator-metal diodes with a native oxide

KAUST Repository

Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

2014-01-01

© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

Preparation and characterization of several transition metal oxides

International Nuclear Information System (INIS)

Wold, A.; Dwight, K.

1989-01-01

The structure-property relationships of several conducting transition metal oxides, as well as their preparative methods, are presented in this paper. The importance of preparing homogeneous phases with precisely known stoichiometry is emphasized. A comparison is also made of the various techniques used to prepare both polycrystalline and single crystal samples. For transition metal oxides, the metallic properties are discussed either in terms of metal-metal distances which are short enough to result in metallic behavior, or in terms of the formation of a π* conduction band resulting from covalent metal-oxygen interactions. Metallic behavior is observed when the conduction bands are populated with either electrons or holes. The concentration of these carriers can be affected by either cation or anion substitutions. The discussion in this presentation will be limited to the elements Re, Ti, V, Cr, Mo, and Cu

Metal Oxide Nanostructures in Food Applications: Quality Control and Packaging

Directory of Open Access Journals (Sweden)

Vardan Galstyan

2018-04-01

Full Text Available Metal oxide materials have been applied in different fields due to their excellent functional properties. Metal oxides nanostructuration, preparation with the various morphologies, and their coupling with other structures enhance the unique properties of the materials and open new perspectives for their application in the food industry. Chemical gas sensors that are based on semiconducting metal oxide materials can detect the presence of toxins and volatile organic compounds that are produced in food products due to their spoilage and hazardous processes that may take place during the food aging and transportation. Metal oxide nanomaterials can be used in food processing, packaging, and the preservation industry as well. Moreover, the metal oxide-based nanocomposite structures can provide many advantageous features to the final food packaging material, such as antimicrobial activity, enzyme immobilization, oxygen scavenging, mechanical strength, increasing the stability and the shelf life of food, and securing the food against humidity, temperature, and other physiological factors. In this paper, we review the most recent achievements on the synthesis of metal oxide-based nanostructures and their applications in food quality monitoring and active and intelligent packaging.

Radiation effects in metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Collins, J.L.

1987-01-01

The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

Crystalline oxides on semiconductors: A structural transition of the interface phase

Science.gov (United States)

Walker, F. J.; Buongiorno-Nardelli, Marco; Billman, C. A.; McKee, R. A.

2004-03-01

The growth of crystalline oxides on silicon is facilitated by the preparation of a surface phase of alkaline earth silicide. We describe how the surface phase serves as a precursor of the final interface phase using reflection high energy electron diffraction (RHEED) and density functional theory (DFT). RHEED intensity oscillations of the growth of BaSrO show layer-by-layer build up of the oxide on the interface. The 2x1 symmetry of the surface precursor persists up to 3 ML BaSrO coverage at which point a 1x1 pattern characteristic of the rock-salt structure of BaSrO is observed. Prior to 3 ML growth of alkaline earth oxide, DFT calculations and RHEED show that the surface precursor persists as the interface phase and induces large displacements in the growing oxide layer away from the rock-salt structure and having a 2x1 symmetry. These distortions of the rock-salt structure are energetically unfavorable and become more unfavorable as the oxide thickness increases. At 3 ML, the stability of the rock-salt structure drives a structural transformation of the film and the interface phase to a structure that is distinct from the surface precursor. Research sponsored jointly by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Oak Ridge National Laboratory under contract DE-AC05-00OR22725 with UT-Battelle, LLC and at the University of Tennessee under contract DE-FG02-01ER45937. Calculations have been performed on CCS supercomputers at Oak Ridge National Laboratory.

Influence of alkali metal oxides and alkaline earth metal oxides on the mitigation of stress corrosion cracking in CANDU fuel sheathing

Energy Technology Data Exchange (ETDEWEB)

Metzler, J.; Ferrier, G.A.; Farahani, M.; Chan, P.K.; Corcoran, E.C., E-mail: Joseph.Metzler@rmc.ca [Royal Military College of Canada, Kingston, ON (Canada)

2015-07-01

Stress corrosion cracking (SCC)can cause failures of CANDU Zircaloy-4 fuel sheathing. The process occurs when a corrosive element (i.e.,iodine) interacts with a susceptible material that is under sufficient strain at a high temperature. Currently, there is an ongoing effort to improve SCC mitigation strategies for future iterations of CANDU reactors. A potential mechanism for SCC mitigation involves utilizing alkali metal oxides and alkaline earth metal oxides that will sequester corrosive iodine while actively repairing a protective oxide layer on the sheath. SCC tests performed with sodium oxide (Na{sub 2}O) and calcium oxide (CaO) have shown to decrease significantly the sheath degradation. (author)

X-ray photoelectron spectroscopy study of the initial oxidation of uranium metal in oxygen+water-vapour mixtures

International Nuclear Information System (INIS)

Allen, G.C.; Tucker, P.M.; Lewis, R.A.

1984-01-01

X-ray photoelectron spectroscopy (X.p.s.) has been used to study the chemical nature of the oxide film initially produced on clean uranium metal in oxygen + water-vapour atmospheres. The rate of reaction has been monitored and the nature of the surface film determined. From a consideration of the O 1s and U 4f X.p. spectra it has been possible to advance a mechanism which explains the complex nature of the surface oxide and the lack of satellite structure in the spectra. This is postulated to be a consequence of the way in which OH - is involved in the growth of the oxide and the presence of hydrogen in the surface film. The presence of oxygen retards the water oxidation reaction by inhibiting the decomposition of water vapour at the gas/oxide interface. (author)

X-ray photoelectron spectroscopy study of the initial oxidation of uranium metal in oxygen+water-vapour mixtures

Energy Technology Data Exchange (ETDEWEB)

Allen, G.C.; Tucker, P.M.; Lewis, R.A. (Central Electricity Generating Board, Berkeley (UK). Berkeley Nuclear Labs.)

1984-08-01

X-ray photoelectron spectroscopy (X.p.s.) has been used to study the chemical nature of the oxide film initially produced on clean uranium metal in oxygen + water-vapour atmospheres. The rate of reaction has been monitored and the nature of the surface film determined. From a consideration of the O 1s and U 4f X.p. spectra it has been possible to advance a mechanism which explains the complex nature of the surface oxide and the lack of satellite structure in the spectra. This is postulated to be a consequence of the way in which OH/sup -/ is involved in the growth of the oxide and the presence of hydrogen in the surface film. The presence of oxygen retards the water oxidation reaction by inhibiting the decomposition of water vapour at the gas/oxide interface.

Plasma electrolytic oxidation of metals

Directory of Open Access Journals (Sweden)

Stojadinović Stevan

2013-01-01

Full Text Available In this lecture results of the investigation of plasma electrolytic oxidation (PEO process on some metals (aluminum, titanium, tantalum, magnesium, and zirconium were presented. Whole process involves anodizing metals above the dielectric breakdown voltage where numerous micro-discharges are generated continuously over the coating surface. For the characterization of PEO process optical emission spectroscopy and real-time imaging were used. These investigations enabled the determination of electron temperature, electron number density, spatial density of micro-discharges, the active surface covered by micro-discharges, and dimensional distribution of micro-discharges at various stages of PEO process. Special attention was focused on the results of the study of the morphology, chemical, and phase composition of oxide layers obtained by PEO process on aluminum, tantalum, and titanium in electrolytes containing tungsten. Physicochemical methodes: atomic force microscopy (AFM, scanning electron microscopy (SEM-EDS, x-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS, and Raman spectroscopy served as tools for examining obtained oxide coatings. Also, the application of the obtained oxide coatings, especially the application of TiO2/WO3 coatings in photocatalysis, were discussed.

Method and apparatus for the production of metal oxide powder

Science.gov (United States)

Harris, Michael T.; Scott, Timothy C.; Byers, Charles H.

1992-01-01

The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

Simulation of Magnetic Phenomena at Realistic Interfaces

KAUST Repository

Grytsyuk, Sergiy

2016-02-04

In modern technology exciting developments are related to the ability to understand and control interfaces. Particularly, magnetic interfaces revealing spindependent electron transport are of great interest for modern spintronic devices, such as random access memories and logic devices. From the technological point of view, spintronic devices based on magnetic interfaces enable manipulation of the magnetism via an electric field. Such ability is a result of the different quantum effects arising from the magnetic interfaces (for example, spin transfer torque or spin-orbit torque) and it can reduce the energy consumption as compared to the traditional semiconductor electronic devices. Despite many appealing characteristics of these materials, fundamental understanding of their microscopic properties and related phenomena needs to be established by thorough investigation. In this work we implement first principles calculations in order to study the structural, electric, and magnetic properties as well as related phenomena of two types of interfaces with large potential in spintronic applications: 1) interfaces between antiferromagnetic 3d-metal-oxides and ferromagnetic 3d-metals and 2) interfaces between non-magnetic 5d(4d)- and ferromagnetic 3d-metals. A major difficulty in studying such interfaces theoretically is the typically large lattice mismatch. By employing supercells with Moir e patterns, we eliminate the artificial strain that leads to doubtful results and are able to describe the dependence of the atomic density at the interfaces on the component materials and their thicknesses. After establishing understanding about the interface structures, we investigate the electronic and magnetic properties. A Moir e supercell with transition layer is found to reproduce the main experimental findings and thus turns out to be the appropriate model for simulating magnetic misfit interfaces. In addition, we systematically study the magnetic anisotropy and Rashba band

Oblique interactions of detonation waves with explosive/metal interfaces

International Nuclear Information System (INIS)

Walsh, J.M.

1982-12-01

The interaction of a detonation wave with an explosive/metal interface is considered. Theoretical models are discussed, and calculated results are given for PBX 9501 onto uranium, tantalum, copper, 304 stainless steel, aluminum, and nickel. For PBX 9501 onto aluminum and copper, regular shock reflection (in the PBX 9501) at small angles changes to regular rarefaction reflection (Prandtl-Meyer flow) at large angles, and the curve of metal-shock pressure vs incidence angle is smooth. For the other metals, there is a discontinuity in shock pressure where low-angle, regular reflection transists to Mach reflection, and a smaller discontinuity where the Mach reflection changes back to high-angle regular reflection

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

Directory of Open Access Journals (Sweden)

Tae-Jun Ha

2014-10-01

Full Text Available We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs for transparent electronics by exploring the shift in threshold voltage (Vth. A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO TFTs possessing large optical band-gap (≈3 eV was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

Energy Technology Data Exchange (ETDEWEB)

Ha, Tae-Jun [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

2014-10-15

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Density functional theory based study of chlorine doped WS2-metal interface

International Nuclear Information System (INIS)

Chanana, Anuja; Mahapatra, Santanu

2016-01-01

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS 2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS 2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS 2 .

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

Science.gov (United States)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

Reactions at the Ni-ZrO2 interface

International Nuclear Information System (INIS)

Shinde, S.L.; Reimanis, I.E.; DeJonghe, L.C.

1985-01-01

The degradation of metal-ceramic interface at elevated temperatures in protective ceramic coatings limits their life-time. A model system of nickel particles dispersed in a zirconia matrix is used to resolve these changes. Oxidation at elevated temperatures (900 0 C) leads to NiO growth at the interface. The matrix is destabilized when the stabilizer is soluble in NiO, resulting in transformation to deleterious monoclinic phase which is found to be one important reason for interface degradation

Impacts of metal and metal oxide nanoparticles on marine organisms

International Nuclear Information System (INIS)

Baker, Tony J.; Tyler, Charles R.; Galloway, Tamara S.

2014-01-01

Increasing use of metal and metal oxide nanoparticles [Me(O)NPs] in products means many will inevitably find their way into marine systems. Their likely fate here is sedimentation following hetero-aggregation with natural organic matter and/or free anions, putting benthic, sediment-dwelling and filter feeding organisms most at risk. In marine systems, Me(O)NPs can absorb to micro-organisms with potential for trophic transfer following consumption. Filter feeders, especially bivalves, accumulate Me(O)NPs through trapping them in mucus prior to ingestion. Benthic in-fauna may directly ingest sedimented Me(O)NPs. In fish, uptake is principally via the gut following drinking, whilst Me(O)NPs caught in gill mucus may affect respiratory processes and ion transport. Currently, environmentally-realistic Me(O)NP concentrations are unlikely to cause significant adverse acute health problems, however sub-lethal effects e.g. oxidative stresses have been noted in many organisms, often deriving from dissolution of Ag, Cu or Zn ions, and this could result in chronic health impacts. -- Highlights: • Nanoparticle (NP) use increasing, and NPs ultimately discharged to marine systems. • Metal ion dissolution from NPs causes oxidative stress at relevant concentrations. • Bioaccumulation and trophic transfer of NPs likely at all levels of marine food webs. • Biofilms and filter feeders are major NP accumulators, but many Classes lack study. • Current release levels unlikely to cause chronic damage, but may be a future issue. -- Exposure to metal (oxide) nanoparticles causes sub-lethal effects in marine organisms, the extent of which is related principally to the organisms' feeding regime, habitat and lifestyle

Graphene Oxide flakes: methods and techniques for properties at interfaces

OpenAIRE

Paola, Zuppella; Sara, Zuccon; Marco, Nardello; Jody, Corso Alain; Simone, Silvestrini; Michele, Maggini; Guglielmina, Pelizzo Maria

2014-01-01

Graphene Oxide and reduced Graphene Oxide are intriguing materials for photonics and electronic devices both for intrinsic characteristics and as precursors for the synthesis of graphene. Whatever the application and the engineering purpose, a fine control of the chemical and physical properties is required since the performances of graphene based systems depend on the reduction state of Graphene Oxide and can be strongly affected by interfaces interactions and neighboring effects. Then, a me...

Process for Making a Noble Metal on Tin Oxide Catalyst

Science.gov (United States)

Davis, Patricia; Miller, Irvin; Upchurch, Billy

2010-01-01

To produce a noble metal-on-metal oxide catalyst on an inert, high-surface-area support material (that functions as a catalyst at approximately room temperature using chloride-free reagents), for use in a carbon dioxide laser, requires two steps: First, a commercially available, inert, high-surface-area support material (silica spheres) is coated with a thin layer of metal oxide, a monolayer equivalent. Very beneficial results have been obtained using nitric acid as an oxidizing agent because it leaves no residue. It is also helpful if the spheres are first deaerated by boiling in water to allow the entire surface to be coated. A metal, such as tin, is then dissolved in the oxidizing agent/support material mixture to yield, in the case of tin, metastannic acid. Although tin has proven especially beneficial for use in a closed-cycle CO2 laser, in general any metal with two valence states, such as most transition metals and antimony, may be used. The metastannic acid will be adsorbed onto the high-surface-area spheres, coating them. Any excess oxidizing agent is then evaporated, and the resulting metastannic acid-coated spheres are dried and calcined, whereby the metastannic acid becomes tin(IV) oxide. The second step is accomplished by preparing an aqueous mixture of the tin(IV) oxide-coated spheres, and a soluble, chloride-free salt of at least one catalyst metal. The catalyst metal may be selected from the group consisting of platinum, palladium, ruthenium, gold, and rhodium, or other platinum group metals. Extremely beneficial results have been obtained using chloride-free salts of platinum, palladium, or a combination thereof, such as tetraammineplatinum (II) hydroxide ([Pt(NH3)4] (OH)2), or tetraammine palladium nitrate ([Pd(NH3)4](NO3)2).

Electrochromism in transition metal oxides

International Nuclear Information System (INIS)

Estrada, W.

1993-01-01

Electrochromism is discussed for transition metal oxides. Particularly tungsten oxide and nickel oxide are reviewed, in order to put forth the different aspects of the field. Since this phenomena has been reviewed by several authors, it is not tried to be comprehensive but rather pedagogical. The basic requirements for a material -in both non-emissive displays and energy efficiency applications- to be electrochromic, a general view of electrochromic mechanism, anodic and cathodic electrochromic materials, and current problems for a electrochromic theory are presented. (author) 45 refs., 8 figs

Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

Energy Technology Data Exchange (ETDEWEB)

Herderick, Edward D; Padture, Nitin P [Department of Materials Science and Engineering, Center for Emergent Materials, Ohio State University, Columbus, OH 43210 (United States); Polomoff, Nicholas A; Huey, Bryan D, E-mail: padture.1@osu.edu [Department of Chemical, Materials, and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

2010-08-20

A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO{sub 3}-Au and Au-PbTiO{sub 3}-Au. This method entails electrodeposition of segmented nanowires of Au-TiO{sub 2}-Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO{sub 2} segments into BaTiO{sub 3} or PbTiO{sub 3} segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

Structure and Properties of the Fe/Y2O3 Interface from First Principles Calculations

Energy Technology Data Exchange (ETDEWEB)

Choudhury, Samrat [Los Alamos National Laboratory; Stanek, Christopher R. [Los Alamos National Laboratory; Uberuaga, Blas P. [Los Alamos National Laboratory

2012-07-31

Fundamentals of radiation damage are: (1) Formation of Frenkel pair (interstitial-vacancy pair) defects in the lattice; (2) Concentration of Frenkel pair defects >>> thermal equilibrium thermodynamic concentration; and (3) The radiation damage response of a material is determined by the fate of these excess Frenkel pair defects in the lattice. The objective is to understand the electronic and atomic structure of Fe/Y{sub 2}O{sub 3} interface and segregation behavior of the alloying elements at the interface. The significance of the results of this report are: (1) Provides a science based approach to design new radiation resistant materials. Obtained two controlling parameters - Dislocation density (composition, orientation relationship) and Oxygen partial pressure; (2) Applicable to any other metal/oxide interfaces (both functional and structural properties at the interface) - (a) Nano Catalysts: Oxide-supported metal catalysts Ni/ZrO{sub 2}, (b) Thermal barrier coatings (Ni/Al{sub 2}O{sub 3}), (c) Corrosion of metals and alloys.

Structure and Properties of the Fe/Y2O3 Interface from First Principles Calculations

International Nuclear Information System (INIS)

Choudhury, Samrat; Stanek, Christopher R.; Uberuaga, Blas P.

2012-01-01

Fundamentals of radiation damage are: (1) Formation of Frenkel pair (interstitial-vacancy pair) defects in the lattice; (2) Concentration of Frenkel pair defects >>> thermal equilibrium thermodynamic concentration; and (3) The radiation damage response of a material is determined by the fate of these excess Frenkel pair defects in the lattice. The objective is to understand the electronic and atomic structure of Fe/Y 2 O 3 interface and segregation behavior of the alloying elements at the interface. The significance of the results of this report are: (1) Provides a science based approach to design new radiation resistant materials. Obtained two controlling parameters - Dislocation density (composition, orientation relationship) and Oxygen partial pressure; (2) Applicable to any other metal/oxide interfaces (both functional and structural properties at the interface) - (a) Nano Catalysts: Oxide-supported metal catalysts Ni/ZrO 2 , (b) Thermal barrier coatings (Ni/Al 2 O 3 ), (c) Corrosion of metals and alloys.

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

2015-06-15

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

Dissolution of Fe(III) (hydr) oxides by metal-EDTA complexes

Science.gov (United States)

Ngwack, Bernd; Sigg, Laura

1997-03-01

The dissolution of Fe(III)(hydr)oxides (goethite and hydrous ferric oxide) by metal-EDTA complexes occurs by ligand-promoted dissolution. The process is initiated by the adsorption of metal-EDTA complexes to the surface and is followed by the dissociation of the complex at the surface and the release of Fe(III)EDTA into solution. The dissolution rate is decreased to a great extent if EDTA is complexed by metals in comparison to the uncomplexed EDTA. The rate decreases in the order EDTA CaEDTA ≫ PbEDTA > ZnEDTA > CuEDTA > Co(II)EDTA > NiEDTA. Two different rate-limiting steps determine the dissolution process: (1) detachment of Fe(III) from the oxide-structure and (2) dissociation of the metal-EDTA complexes. In the case of goethite, step 1 is slower than step 2 and the dissolution rates by various metals are similar. In the case of hydrous ferric oxide, step 2 is rate-limiting and the effect of the complexed metal is very pronounced.

The base metal of the oxide-coated cathode

International Nuclear Information System (INIS)

Poret, F.; Roquais, J.M.

2005-01-01

The oxide-coated cathode has been the most widely used electron emitter in vacuum electronic devices. From one manufacturing company to another the emissive oxide is either a double-Ba, Sr-or a triple-Ba, Sr, Ca-oxide, having always the same respective compositions. Conversely, the base metal composition is very often proprietary because of its importance in the cathode emission performances. The present paper aims at explaining the operation of the base metal through a review. After a brief introduction, the notion of activator is detailed along with their diffusivities and their associated interfacial compounds. Then, the different cathode life models are described prior to few comments on the composition choice of a base metal. Finally, the specificities of the RCA/Thomson 'bimetal' base metal are presented with a discussion on the optimized composition choice illustrated by a long-term life-test of five different melts

Infrared Spectroscopy as Molecular Probe of the Macroscopic Metal-Liquid Interface

Directory of Open Access Journals (Sweden)

Johannes Kiefer

2017-11-01

Full Text Available Metal-liquid interfaces are of the utmost importance in a number of scientific areas, including electrochemistry and catalysis. However, complicated analytical methods and sample preparation are usually required to study the interfacial phenomena. We propose an infrared spectroscopic approach that enables investigating the molecular interactions at the interface, but needing only minimal or no sample preparation. For this purpose, the internal reflection element (IRE is wetted with a solution as first step. Second, a small plate of the metal of interest is put on top and pressed onto the IRE. The tiny amount of liquid that is remaining between the IRE and the metal is sufficient to produce an IR spectrum with good signal to noise ratio, from which information about molecular interactions, such as hydrogen bonding, can be deduced. Proof-of-concept experiments were carried out with aqueous salt and acid solutions and an aluminum plate.

Method and apparatus for the production of metal oxide powder

Science.gov (United States)

Harris, M.T.; Scott, T.C.; Byers, C.H.

1992-06-16

The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed. 2 figs.

Mesoporous carbon incorporated metal oxide nanomaterials as supercapacitor electrodes

Energy Technology Data Exchange (ETDEWEB)

Jiang, Hao [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Ma, Jan [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Li, Chunzhong [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China)

2012-08-08

Supercapacitors have attracted huge attention in recent years as they have the potential to satisfy the demand of both huge energy and power density in many advanced technologies. However, poor conductivity and cycling stability remains to be the major challenge for its widespread application. Various strategies have been developed for meeting the ever-increasing energy and power demands in supercapacitors. This Research News article aims to review recent progress in the development of mesoporous carbon incorporated metal oxide nanomaterials, especially metal oxide nanoparticles confined in ordered mesoporous carbon and 1D metal oxides coated with a layer of mesoporous carbon for high-performance supercapacitor applications. In addition, a recent trend in supercapacitor development - hierarchical porous graphitic carbons (HPGC) combining macroporous cores, mesoporous walls, and micropores as an excellent support for metal oxides - is also discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Positron beam analysis of polymer/metal interfaces under stress

NARCIS (Netherlands)

Escobar Galindo, R.; van Veen, A.; Garcia, A.A.; Schut, H.; de Hosson, J.T.M.; Triftshauser, W; Kogel, G; Sperr, P

2001-01-01

The polymers Epoxy and Poly(Methyl MethAcrylate) spin coated on Interstitial Free (IF) steel were subjected to external stresses and studied using the Delft Variable Energy Positron (VEP) beam facility. The polymer/metal interface was identified using an S-W map. After tensile experiments vacancy

Field enhancement at metallic interfaces due to quantum confinement

DEFF Research Database (Denmark)

Öztürk, Fatih; Xiao, Sanshui; Yan, Min

2011-01-01

We point out an apparently overlooked consequence of the boundary conditions obeyed by the electric displacement vector at air-metal interfaces: the continuity of the normal component combined with the quantum mechanical penetration of the electron gas in the air implies the existence of a surfac...

On chemical activity of heavy metal oxides

International Nuclear Information System (INIS)

Mechev, V.V.

1994-01-01

Interaction of solid oxides of heavy nonferrous metals with sulfur and carbon is investigated. The results are discussed. Direct dependence of chemical activity of oxides on disordering of their crystal lattice at heating is established. Beginning of interaction in the systems studied is accompanied by change of oxide conductivity type

Metal oxide/polyaniline nanocomposites: Cluster size and ...

Indian Academy of Sciences (India)

Wintec

Metal oxide/polyaniline nanocomposites; structural properties; magnetic properties. 1. Introduction ... The powder obtained was ground in a motor and pestle, sonicated in ... Figure 1. XRD of (a) iron oxide nanoparticles and (b) iron oxide/PANI (1 : 0⋅4) composite. .... shape of the particles and the anisotropy energy, as also.

Nanostructured carbon-metal oxide composite electrodes for supercapacitors: a review

Science.gov (United States)

Zhi, Mingjia; Xiang, Chengcheng; Li, Jiangtian; Li, Ming; Wu, Nianqiang

2012-12-01

This paper presents a review of the research progress in the carbon-metal oxide composites for supercapacitor electrodes. In the past decade, various carbon-metal oxide composite electrodes have been developed by integrating metal oxides into different carbon nanostructures including zero-dimensional carbon nanoparticles, one-dimensional nanostructures (carbon nanotubes and carbon nanofibers), two-dimensional nanosheets (graphene and reduced graphene oxides) as well as three-dimensional porous carbon nano-architectures. This paper has described the constituent, the structure and the properties of the carbon-metal oxide composites. An emphasis is placed on the synergistic effects of the composite on the performance of supercapacitors in terms of specific capacitance, energy density, power density, rate capability and cyclic stability. This paper has also discussed the physico-chemical processes such as charge transport, ion diffusion and redox reactions involved in supercapacitors.

Nanostructured carbon-metal oxide composite electrodes for supercapacitors: a review.

Science.gov (United States)

Zhi, Mingjia; Xiang, Chengcheng; Li, Jiangtian; Li, Ming; Wu, Nianqiang

2013-01-07

This paper presents a review of the research progress in the carbon-metal oxide composites for supercapacitor electrodes. In the past decade, various carbon-metal oxide composite electrodes have been developed by integrating metal oxides into different carbon nanostructures including zero-dimensional carbon nanoparticles, one-dimensional nanostructures (carbon nanotubes and carbon nanofibers), two-dimensional nanosheets (graphene and reduced graphene oxides) as well as three-dimensional porous carbon nano-architectures. This paper has described the constituent, the structure and the properties of the carbon-metal oxide composites. An emphasis is placed on the synergistic effects of the composite on the performance of supercapacitors in terms of specific capacitance, energy density, power density, rate capability and cyclic stability. This paper has also discussed the physico-chemical processes such as charge transport, ion diffusion and redox reactions involved in supercapacitors.

Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

Energy Technology Data Exchange (ETDEWEB)

Lin, Tzu-Shun [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China)

2015-11-01

Highlights: • The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors. • The resulting homostructured ZnO-based MOSFETs operated at a reverse voltage of −6 V had a very low gate leakage current of 24 nA. • The associated I{sub DSS} and the g{sub m(max)} were 5.64 mA/mm and 1.31 mS/mm, respectively. - Abstract: The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10{sup 11} cm{sup −2} eV{sup −1}, and the complete pinch-off performance. The saturation drain–source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.

Microstructure of bonding interface for resistance welding of Zr-based metallic glass sheets

International Nuclear Information System (INIS)

Kuroda, Toshio; Ikeuchi, Kenji; Shimada, Masahiro; Kobayashi, Akira; Kimura, Hisamichi; Inoue, Akihisa

2009-01-01

Resistance welding of Zr 55 Cu 30 Al 10 Ni 5 metallic glass sheets was investigated at 723 K in a supercooled liquid region. The welding time was changed from 5 s to 20 s at 723 K. The joint interface of the metallic glass was no defect and no crack. X-ray diffraction technique of the bonding interface of specimens was performed. The specimens showed halo patterns showing existence of only glassy phase, when the welding time was 5 s and 10 s. X-ray diffraction patterns of specimen bonded for 20 s showed crystalline peaks with halo patterns for the welding for 20 s. The crystalline phase at the bonding interface was small. Transmission electron micrograph at the bonding interface showed nanostructures of NiZr 2 and Al 5 Ni 3 Zr 2 . (author)

Oxidation Behavior of Simudated Metallic U-Nb Alloys in Air

International Nuclear Information System (INIS)

Lee, Eun Pyo; Ju, June Sik; You, Gil Sung; Cho, Il Je; Kook, Dong Hak; Kim, Ho Dong

2004-01-01

In order to enhance an oxidation resistance of the pure uranium metal under air condition, a small quantity of niobium(Nb) which is known to mitigate metal oxidation is added into uranium metal as an alloying element. A simulated metallic uranium alloy, U-Nb has been fabricated and then oxidized in the range of 200 to under the environment of the pure oxygen gas. The oxidized quantity in terms of the weight gain (wt%) has been measured with the help of a thermogravimetric analyzer. The results show that the oxidation resistance of the U-Nb alloy is considerably enhanced in comparison with that of the pure uranium metal. It is revealed that the oxidation resistance of the former with the niobium content of 1, 2, 3, and 4 wt% is : 1) 1.61, 7.78, 11.76 and 20.14 times at the temperature of 200 .deg. C; 2) 1.45, 5.98, 10.08 and 11.15 times at 250 .deg. C; and 3) 1.33, 4.82, 8.87 and 6.84 times at 300 .deg. C higher than that of the latter, respectively. Besides, it is shown that the activation energy attributable to the oxidation is 17.13-21.92 kcal/mol.

Novel strategy for the preparation of graphene-encapsulated mesoporous metal oxides with enhanced lithium storage

International Nuclear Information System (INIS)

Lin, Rong; Yue, Wenbo; Niu, Fangzhou; Ma, Jie

2016-01-01

As potential anode materials for lithium-ion batteries, mesoporous metal oxides show high reversible capacities but relatively poor cycle stability due to the structural collapse during cycles. Graphene-encapsulated mesoporous metal oxides may increase the electronic conductivity of the composite as well as stabilize the mesostructure of metal oxides, thereby enhancing the electrochemical performance of mesoporous metal oxides. Herein we describe a novel strategy for the preparation of graphene-encapsulated mesoporous metal oxides (SnO_2, Mn_3O_4), which exhibit superior electrochemical performance compared to pure mesoporous metal oxides. Moreover, some mesoporous metal oxides may be further reduced to low-valence metal oxides when calcined in presence of graphene. Mesoporous metal oxides with high isoelectric points are not essential for this synthesis method since metal oxides are connected with graphene through mesoporous silica template, thus expanding the types of graphene-encapsulated mesoporous metal oxides.

Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

Energy Technology Data Exchange (ETDEWEB)

Wang, Wenyong [Univ. of Wyoming, Laramie, WY (United States); Tang, Jinke [Univ. of Wyoming, Laramie, WY (United States); Dahnovsky, Yuri [Univ. of Wyoming, Laramie, WY (United States); Pikal, Jon M [Univ. of Wyoming, Laramie, WY (United States); Chien, TeYu [Univ. of Wyoming, Laramie, WY (United States)

2017-11-03

In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation

On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

International Nuclear Information System (INIS)

Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

1986-01-01

Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

Preparation and utilization of metal oxide fine powder

Energy Technology Data Exchange (ETDEWEB)

Kim, Joon Soo; Jang, Hee Dong; Lim, Young Woong; Kim, Sung Don; Lee, Hi Sun; Lee, Hoo In; Kim, Chul Joo; Shim, Gun Joo; Jang, Dae Kyu [Korea Inst. of Geology Mining and Materials, Taejon (Korea, Republic of)

1995-12-01

Metal oxide fine powders finds many applications in industry as new materials. It is very much necessary for the development of such powders to improve the domestic industry. The purpose of present research is to develop a process for the preparation and utilization of metal oxide fine powder. This project is consisted of two main subjects. (1) Production of ultrafine metal oxide powder: Ultrafine metal oxide powder is defined as a metal oxide powder of less than 100 nanometer in particle size. Experiments for the control of particle size and distributions in the various reaction system and compared with results of (2 nd year research). Various reaction systems were adopted for the development of feasible process. Ultrafine particles could be prepared even higher concentration of TiCl{sub 4} and lower gas flowrate compared to TiCl{sub 4}-O{sub 2} system in the TiCl{sub 4}-Air-H{sub 2}O system. Ultrafine Al{sub 2}O{sub 3} powders also prepared with the change of concentration and gas flowrate. Experiments on the treatment of surface characteristics of ultrafine TiO{sub 2} powders were investigated using esterification and surface treating agents. A mathematical model that can predict the particle size and distribution was also developed. (2) Preparation of cerium oxide for high-grade polishing powder: Used cerium polishing powder was recycled for preparation of high grade cerium oxide polishing powder. Also, cerium hydroxide which was generated as by-product in processing of monazite ore was used as another material. These two materials were leached respectively by using acid, and the precipitate was gained in each leached solution by adjusting pH of the solution, and by selective crystallization. These precipitates were calcined to make high grade cerium oxide polishing powder. The effect of several experimental variables were investigated, and the optimum conditions were obtained through the experiments. (author). 81 refs., 49 figs., 27 tabs.

A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

International Nuclear Information System (INIS)

Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

2016-01-01

Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

Science.gov (United States)

Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

2016-12-01

In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn2O3, Co3O4 and Cr2O3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.