WorldWideScience

Sample records for metal nanoscale devices

  1. Spintronics in nanoscale devices

    CERN Document Server

    Hedin, Eric R

    2013-01-01

    By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

  2. Nanoscale memory devices

    International Nuclear Information System (INIS)

    Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

    2010-01-01

    This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

  3. Nanoscale phase-change materials and devices

    International Nuclear Information System (INIS)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-01-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced. (topical review)

  4. Nanoscale phase-change materials and devices

    Science.gov (United States)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-06-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced.

  5. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  6. Remote control of nanoscale devices

    Science.gov (United States)

    Högberg, Björn

    2018-01-01

    Processes that occur at the nanometer scale have a tremendous impact on our daily lives. Sophisticated evolved nanomachines operate in each of our cells; we also, as a society, increasingly rely on synthetic nanodevices for communication and computation. Scientists are still only beginning to master this scale, but, recently, DNA nanotechnology (1)—in particular, DNA origami (2)—has emerged as a powerful tool to build structures precise enough to help us do so. On page 296 of this issue, Kopperger et al. (3) show that they are now also able to control the motion of a DNA origami device from the outside by applying electric fields.

  7. Nanoscale chirality in metal and semiconductor nanoparticles.

    Science.gov (United States)

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  8. Nanoscale device physics science and engineering fundamentals

    CERN Document Server

    Tiwari, Sandip

    2017-01-01

    Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the inter-actions, and others. These interactions, with the limits placed on size, make not just electronic, but also magnetic, optical and mechanical behavior interesting, important and useful. Connecting these properties to the behavior of devices is the focus of this textbook. Description of the book series: This collection of four textbooks in the Electroscience series span the undergrad...

  9. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    Science.gov (United States)

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  10. Nanoscale electron manipulation in metals with intense THz electric fields

    Science.gov (United States)

    Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

    2018-03-01

    Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

  11. Dopant atoms as quantum components in silicon nanoscale devices

    Science.gov (United States)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  12. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

    2008-01-01

    Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

  13. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

    2005-01-01

    Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

  14. Nanoscale devices based on plasmonic coaxial waveguide resonators

    Science.gov (United States)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  15. Thermoelectric efficiency of nanoscale devices in the linear regime

    Science.gov (United States)

    Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

    2016-12-01

    We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

  16. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    Science.gov (United States)

    Chen, Lih-Juann

    2016-12-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  17. Optical Biosensors: A Revolution Towards Quantum Nanoscale Electronics Device Fabrication

    Directory of Open Access Journals (Sweden)

    D. Dey

    2011-01-01

    Full Text Available The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  18. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    Science.gov (United States)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  19. Semiempirical model for nanoscale device simulations

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Petersen, Dan Erik; Smidstrup, Søren

    2010-01-01

    We present a semiempirical model for calculating electron transport in atomic-scale devices. The model is an extension of the extended Hückel method with a self-consistent Hartree potential that models the effect of an external bias and corresponding charge rearrangements in the device. It is also...... possible to include the effect of external gate potentials and continuum dielectric regions in the device. The model is used to study the electron transport through an organic molecule between gold surfaces, and it is demonstrated that the results are in closer agreement with experiments than ab initio...

  20. Liquid metal purification device

    International Nuclear Information System (INIS)

    Sakai, Takao; Shimoyashiki, Shigehiro.

    1992-01-01

    The device of the present invention concerns a liquid metal purification device for removing and purifying impuries in liquid metal sodium used as coolants of an FBR type reactor. A vessel having a group of pipes made of hydrogen permeable metal at the inside thereof is disposed to the inlet pipeline of a cold trap. The group of hydrogen permeable metal pipes is connected to an exhaust pipe and a vacuum pump, so that the inside of the pipes is exhausted. Liquid metal sodium branched from the main pipeline of a coolant system passes through the outer side of the group of the hydrogen permeable metal pipes. In this cae, hydrogen contained as impurities in the liquid metal sodium diffuses and permeates the hydrogen permeation metal pipes and enters into the pipe group and is discharged out of the system by the vacuum pump. This can mitigate the hydrogen removing burden of the cold trap, to extend the device life time. (I.N.)

  1. Metallic spintronic devices

    CERN Document Server

    Wang, Xiaobin

    2014-01-01

    Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

  2. Status and perspectives of nanoscale device modelling

    DEFF Research Database (Denmark)

    Macucci, M.; Lannaccone, G.; Greer, J.

    2001-01-01

    During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status...

  3. Molecular and nanoscale materials and devices in electronics.

    Science.gov (United States)

    Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

    2004-12-13

    Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

  4. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

    Science.gov (United States)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

    2013-09-27

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

  5. Development of Nanoscale Graphitic Devices and The Transport Characterization

    International Nuclear Information System (INIS)

    Gunasekaran, Venugopal

    2011-02-01

    This dissertation describes the development of graphitic based nanoscale devices with its fabrication and transport characterization results. It covers graphite nano-scale stacked-junctions fabricated using focused ion beam (FIB) 3-D etching technique, a single layer graphite layer (graphene) preparation and its electrical transport characterization results and the synthesis and investigation of electrical transport behavior of graphene oxide based thin film devices. The first chapter describes the basic information about the carbon family in detail in which the electronic properties and structure of graphite, graphene and graphene oxide are discussed. In addition, the necessity of developing nanoscale graphitic devices is given. The second chapter explains the experimental techniques used in this research for fabricating nanoscale devices which includes focused ion beam 3-D fabrication procedures, mechanical exfoliation technique and photolithographic methods. In third chapter, we have reported the results on temperature dependence of graphite planar-type structures fabricated along ab-plane. In the fourth and fifth chapters, the fabrication and electrical transport characteristics of large in-plane area graphite planar-type structures (fabricated along ab-plane and c-axis) were discussed and their transport anisotropy properties were investigated briefly. In the sixth chapter, we focused the fabrication of the submicron sized graphite stacked junctions and their electrical transport characterization studies. In which, FIB was used to fabricated the submicron junctions with various in-plane area (with same stack height) are and their transport characteristics were compared. The seventh chapter reports investigation of electrical transport results of nanoscale graphite stacked-junctions in which the temperature dependent transport (R-T) studies, current-voltage measurements for the various in-plane areas and for various stack height samples were analyzed. The

  6. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  7. Fungal nanoscale metal carbonates and production of electrochemical materials.

    Science.gov (United States)

    Li, Qianwei; Gadd, Geoffrey Michael

    2017-09-01

    Fungal biomineralization of carbonates results in metal removal from solution or immobilization within a solid matrix. Such a system provides a promising method for removal of toxic or valuable metals from solution, such as Co, Ni, and La, with some carbonates being of nanoscale dimensions. A fungal Mn carbonate biomineralization process can be applied for the synthesis of novel electrochemical materials. © 2017 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

  8. Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

    Science.gov (United States)

    Wong, Hei; Iwai, Hiroshi; Liou, J. J.

    2005-05-01

    It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

  9. Metal oxide gas sensors on the nanoscale

    Science.gov (United States)

    Plecenik, A.; Haidry, A. A.; Plecenik, T.; Durina, P.; Truchly, M.; Mosko, M.; Grancic, B.; Gregor, M.; Roch, T.; Satrapinskyy, L.; Moskova, A.; Mikula, M.; Kus, P.

    2014-06-01

    Low cost, low power and highly sensitive gas sensors operating at room temperature are very important devices for controlled hydrogen gas production and storage. One of the disadvantages of chemosensors is their high operating temperature (usually 200 - 400 °C), which excludes such type of sensors from usage in explosive environment. In this report, a new concept of gas chemosensors operating at room temperature based on TiO2 thin films is discussed. Integration of such sensor is fully compatible with sub-100 nm semiconductor technology and could be transferred directly from labor to commercial sphere.

  10. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  11. Advances in neuromorphic hardware exploiting emerging nanoscale devices

    CERN Document Server

    2017-01-01

    This book covers all major aspects of cutting-edge research in the field of neuromorphic hardware engineering involving emerging nanoscale devices. Special emphasis is given to leading works in hybrid low-power CMOS-Nanodevice design. The book offers readers a bidirectional (top-down and bottom-up) perspective on designing efficient bio-inspired hardware. At the nanodevice level, it focuses on various flavors of emerging resistive memory (RRAM) technology. At the algorithm level, it addresses optimized implementations of supervised and stochastic learning paradigms such as: spike-time-dependent plasticity (STDP), long-term potentiation (LTP), long-term depression (LTD), extreme learning machines (ELM) and early adoptions of restricted Boltzmann machines (RBM) to name a few. The contributions discuss system-level power/energy/parasitic trade-offs, and complex real-world applications. The book is suited for both advanced researchers and students interested in the field.

  12. Nanoscale strain engineering of graphene and graphene-based devices

    Institute of Scientific and Technical Information of China (English)

    N-C Yeh; C-C Hsu; M L Teague; J-Q Wang; D A Boyd; C-C Chen

    2016-01-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simula-tions and nano-fabrication technology.

  13. Methods and devices for fabricating three-dimensional nanoscale structures

    Science.gov (United States)

    Rogers, John A.; Jeon, Seokwoo; Park, Jangung

    2010-04-27

    The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

  14. Nanoconstruction by welding individual metallic nanowires together using nanoscale solder

    International Nuclear Information System (INIS)

    Peng, Y; Inkson, B J; Cullis, A G

    2010-01-01

    This work presents a new bottom-up nanowelding technique enabling building blocks to be assembled and welded together into complex 3D nanostructures using nanovolumes of metal solder. The building blocks of gold nanowires, (Co 72 Pt 28 /Pt) n multilayer nanowires, and nanosolder Sn 99 Au 1 alloy nanowires were successfully fabricated by a template technique. Individual metallic nanowires were picked up and assembled together. Conductive nanocircuits were then welded together using similar or dissimilar nanosolder material. At the weld sites, nanoscale volumes of a chosen metal are deposited using nanosolder of a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. The whole nanowelding process is clean, controllable and reliable, and ensures both mechanically strong and electrically conductive contacts.

  15. Critical properties of symmetric nanoscale metal-ferroelectric-metal capacitors

    International Nuclear Information System (INIS)

    Zheng Yue; Cai, M.Q.; Woo, C.H.

    2010-01-01

    The size, surface and interface effects on the magnitude and stability of spontaneous polarization in a symmetric nanoscale ferroelectric capacitor were studied by analyzing its evolutionary trajectory based on a thermodynamic model. Analytic expressions of the Curie temperature, spontaneous polarization, critical thickness and the Curie-Weiss relation were derived, taking into account the effects of the depolarization field, built-in electric field, interfaces and surfaces. Our results show that the critical properties are not only functions of the ambient temperature, misfit strain and electromechanical boundary conditions, but also depend on the characteristics of electrodes, surfaces and interfaces, through the incomplete charge compensation, near-surface variation of polarization and work function steps of ferroelectric-electrode interfaces, which are adjustable.

  16. Simple Methods for Production of Nanoscale Metal Oxide Films from Household Sources

    Science.gov (United States)

    Campbell, Dean J.; Baliss, Michelle S.; Hinman, Jordan J.; Ziegenhorn, John W.; Andrews, Mark J.; Stevenson, Keith J.

    2013-01-01

    Production of thin metal oxide films was recently explored as part of an outreach program with a goal of producing nanoscale structures with household items. Household items coated with various metals or titanium compounds can be heated to produce colorful films with nanoscale thicknesses. As part of a materials chemistry laboratory experiment…

  17. Humidity effects on the electronic transport properties in carbon based nanoscale device

    International Nuclear Information System (INIS)

    He, Jun; Chen, Ke-Qiu

    2012-01-01

    By applying nonequilibrium Green's functions in combination with the density functional theory, we investigate the effect of humidity on the electronic transport properties in carbon based nanoscale device. The results show that different humidity may form varied localized potential barrier, which is a very important factor to affect the stability of electronic transport in the nanoscale system. A mechanism for the humidity effect is suggested. -- Highlights: ► Electronic transport in carbon based nanoscale device. ► Humidity affects the stability of electronic transport. ► Different humidity may form varied localized potential barrier.

  18. The mechanical behavior of nanoscale metallic multilayers: A survey

    Science.gov (United States)

    Zhou, Q.; Xie, J. Y.; Wang, F.; Huang, P.; Xu, K. W.; Lu, T. J.

    2015-06-01

    The mechanical behavior of nanoscale metallic multilayers (NMMs) has attracted much attention from both scientific and practical views. Compared with their monolithic counterparts, the large number of interfaces existing in the NMMs dictates the unique behavior of this special class of structural composite materials. While there have been a number of reviews on the mechanical mechanism of microlaminates, the rapid development of nanotechnology brought a pressing need for an overview focusing exclusively on a property-based definition of the NMMs, especially their size-dependent microstructure and mechanical performance. This article attempts to provide a comprehensive and up-to-date review on the microstructure, mechanical property and plastic deformation physics of NMMs. We hope this review could accomplish two purposes: (1) introducing the basic concepts of scaling and dimensional analysis to scientists and engineers working on NMM systems, and (2) providing a better understanding of interface behavior and the exceptional qualities the interfaces in NMMs display at atomic scale.

  19. Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

    Science.gov (United States)

    Dahal, Bishnu R.

    The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

  20. Charge transport in nanoscale vertical organic semiconductor pillar devices

    NARCIS (Netherlands)

    Wilbers, J.G.E.; Xu, B.; Bobbert, P.A.; de Jong, M.P.; van der Wiel, W.G.

    2017-01-01

    We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust

  1. Plant virus directed fabrication of nanoscale materials and devices

    Science.gov (United States)

    2015-03-26

    Structural features within the internal and external PVN surfaces are amenable to either chemi- cal or genetic modifications for the display of novel moieties...structures: from nanoboomerangs to tetrapods. Nanoscale 7, 344–355. Eggen, R., Verver, J., Wellink, J., De Jong, A., Goldbach, R., van Kammen, A., 1989...in planta expression and for templates for synthetic biology applica- tions. New Phytol. 200, 16–26. Saunders, K., Sainsbury, F., Lomonossoff, G.P

  2. Nanoscale strengthening mechanisms in metallic thin film systems

    Science.gov (United States)

    Schoeppner, Rachel Lynn

    Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity

  3. A Review of Atomic Layer Deposition for Nanoscale Devices

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-12-01

    Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

  4. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  5. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    KAUST Repository

    Kumar, Naresh

    2017-01-12

    Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

  6. Charge transport in nanoscale "all-inorganic" networks of semiconductor nanorods linked by metal domains.

    Science.gov (United States)

    Lavieville, Romain; Zhang, Yang; Casu, Alberto; Genovese, Alessandro; Manna, Liberato; Di Fabrizio, Enzo; Krahne, Roman

    2012-04-24

    Charge transport across metal-semiconductor interfaces at the nanoscale is a crucial issue in nanoelectronics. Chains of semiconductor nanorods linked by Au particles represent an ideal model system in this respect, because the metal-semiconductor interface is an intrinsic feature of the nanosystem and does not manifest solely as the contact to the macroscopic external electrodes. Here we investigate charge transport mechanisms in all-inorganic hybrid metal-semiconductor networks fabricated via self-assembly in solution, in which CdSe nanorods were linked to each other by Au nanoparticles. Thermal annealing of our devices changed the morphology of the networks and resulted in the removal of small Au domains that were present on the lateral nanorod facets, and in ripening of the Au nanoparticles in the nanorod junctions with more homogeneous metal-semiconductor interfaces. In such thermally annealed devices the voltage dependence of the current at room temperature can be well described by a Schottky barrier lowering at a metal semiconductor contact under reverse bias, if the spherical shape of the gold nanoparticles is considered. In this case the natural logarithm of the current does not follow the square-root dependence of the voltage as in the bulk, but that of V(2/3). From our fitting with this model we extract the effective permittivity that agrees well with theoretical predictions for the permittivity near the surface of CdSe nanorods. Furthermore, the annealing improved the network conductance at cryogenic temperatures, which could be related to the reduction of the number of trap states.

  7. TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

    Science.gov (United States)

    Khizroev, S.; Litvinov, D.

    2004-03-01

    In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

  8. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  9. Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2.

    Science.gov (United States)

    Cui, Qiannan; Zhao, Hui

    2015-04-28

    Transition metal dichalcogenides are predicted to outperform traditional semiconductors in ballistic devices with nanoscale channel lengths. So far, experimental studies on charge transport in transition metal dichalcogenides are limited to the diffusive regime. Here we show, using ReS2 as an example, all-optical injection, detection, and coherent control of ballistic currents. By utilizing quantum interference between one-photon and two-photon interband transition pathways, ballistic currents are injected in ReS2 thin film samples by a pair of femtosecond laser pulses. We find that the current decays on an ultrafast time scale, resulting in an electron transport of only a fraction of one nanometer. Following the relaxation of the initially injected momentum, backward motion of the electrons for about 1 ps is observed, driven by the Coulomb force from the oppositely moved holes. We also show that the injected current can be controlled by the phase of the laser pulses. These results demonstrate a new platform to study ballistic transport of nonequilibrium carriers in transition metal dichalcogenides.

  10. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  11. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

    International Nuclear Information System (INIS)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-lae; Sheri, Ahmad Muqeem; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Hwang, Hyunsang

    2013-01-01

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption. In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal–oxide–semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers. (paper)

  12. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Directory of Open Access Journals (Sweden)

    Sukru Burc Eryilmaz

    2014-07-01

    Full Text Available Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

  13. Nano-Scale Devices for Frequency-Based Magnetic Biosensing

    Science.gov (United States)

    2017-01-31

    show the basic measurement setup (the field is applied perpendicular to the disk plane). A radiofrequency signal is injected across the disk (disks...shown in Fig. 7(a). A spectrum analyser (S.A.) (or a high frequency oscilloscope) is used to measure the radiofrequency STO output signal with Fig...crystals and, via electrical measurements , in magnetic-vortex-containing, isolated micro- and nano-devices. Via micromagnetic simulations, we have largely

  14. Quantum transport in semiconductor nanostructures and nanoscale devices

    International Nuclear Information System (INIS)

    Zhen-Li, Ji.

    1991-09-01

    Only a decade ago the study and fabrication of electron devices whose smallest features were just under 1 micro represented the forefront of the field. Today that position has advanced an order of magnitude to 100 nanometers. Quantum effects are unavoidable in devices with dimensions smaller than 100 nanometers. A variety of quantum effects have been discovered over the years, such as tunneling, resonant tunneling, weak and strong localization, and the quantum Hall effect. Since 1985, experiments on nanostructures (dimension < 100 nm) have revealed a number of new effects such as the Aharanov-Bohm effect, conductance fluctuations, non-local effects and the quantized resistance of point contacts. For nanostructures at low temperature, these phenomena clearly show that electron transport is influenced by wave interference effects similar to those well-known in microwave and optical networks. New device concepts now being proposed and demonstrated are based on these wave properties. This thesis discusses our study of electron transport in nanostructures. All of the quantum phenomena that we address here are essentially one-electron phenomena, although many-body effects will sometimes play a more significant role in the electronic properties of small structures. Most of the experimental observations to date are particularly well explained, at least qualitatively, in terms of the simple one-particle picture. (au)

  15. Ballistic calculation of nonequilibrium Green's function in nanoscale devices using finite element method

    International Nuclear Information System (INIS)

    Kurniawan, O; Bai, P; Li, E

    2009-01-01

    A ballistic calculation of a full quantum mechanical system is presented to study 2D nanoscale devices. The simulation uses the nonequilibrium Green's function (NEGF) approach to calculate the transport properties of the devices. While most available software uses the finite difference discretization technique, our work opts to formulate the NEGF calculation using the finite element method (FEM). In calculating a ballistic device, the FEM gives some advantages. In the FEM, the floating boundary condition for ballistic devices is satisfied naturally. This paper gives a detailed finite element formulation of the NEGF calculation applied to a double-gate MOSFET device with a channel length of 10 nm and a body thickness of 3 nm. The potential, electron density, Fermi functions integrated over the transverse energy, local density of states and the transmission coefficient of the device have been studied. We found that the transmission coefficient is significantly affected by the top of the barrier between the source and the channel, which in turn depends on the gate control. This supports the claim that ballistic devices can be modelled by the transport properties at the top of the barrier. Hence, the full quantum mechanical calculation presented here confirms the theory of ballistic transport in nanoscale devices.

  16. Redox control of molecular motion in switchable artificial nanoscale devices.

    Science.gov (United States)

    Credi, Alberto; Semeraro, Monica; Silvi, Serena; Venturi, Margherita

    2011-03-15

    The design, synthesis, and operation of molecular-scale systems that exhibit controllable motions of their component parts is a topic of great interest in nanoscience and a fascinating challenge of nanotechnology. The development of this kind of species constitutes the premise to the construction of molecular machines and motors, which in a not-too-distant future could find applications in fields such as materials science, information technology, energy conversion, diagnostics, and medicine. In the past 25 years the development of supramolecular chemistry has enabled the construction of an interesting variety of artificial molecular machines. These devices operate via electronic and molecular rearrangements and, like the macroscopic counterparts, they need energy to work as well as signals to communicate with the operator. Here we outline the design principles at the basis of redox switching of molecular motion in artificial nanodevices. Redox processes, chemically, electrically, or photochemically induced, can indeed supply the energy to bring about molecular motions. Moreover, in the case of electrically and photochemically induced processes, electrochemical and photochemical techniques can be used to read the state of the system, and thus to control and monitor the operation of the device. Some selected examples are also reported to describe the most representative achievements in this research area.

  17. Radiation engineered multi-functional nanogels as nanoscale building blocks of useful biomedical devices

    International Nuclear Information System (INIS)

    Dispenza, C.

    2011-01-01

    Complete text of publication follows. Nanogels, or small particles formed by physically or chemically crosslinked polymer networks, represent a niche in the development of 'smart' nanoparticles for drug delivery and diagnostics. They offer unique advantages over other systems, including a large and flexible surface for multivalent bio-conjugation; an internal 3D aqueous environment for incorporation and protection of (bio)molecular drugs; the possibility to entrap active metal or mineral cores for imaging or phototherapeutic purposes; stimuli-responsiveness to achieve temporal and/or site control of the release function and biocompatibility. Moreover, conformability and flexibility make these nanoparticles able to penetrate through small pores and channels through shape modification. Major synthetic strategies for the preparation of nanogels belong to either micro-fabrication methodologies (photolithography, microfluidic, micromoulding) or to self-assembly approaches that exploit ionic, hydrophobic or covalent interactions. When dimensional control has been achieved through the recourse to 'soft templates', such as the internal aqueous phase droplets of inverse microemulsions, the use of surfactants, initiators and catalysts often require complex purification procedures. On the other hand, micro-fabrication methods, such as nanomoulding, are limited by the need of costly equipments. The availability of inexpensive and robust preparation methodologies is at the basis of the development of effective nanogel-based theragnostic devices. High energy radiation processing already demonstrated its potential for the production of nanogels in the late 90's, owing to the pioneeristic work of Rosiak and collaborators, but since no adequate efforts have been spent in developing a viable and robust technology to produce multi-functional nanogels for the benefit of several different nanotechnology application fields, such as sensing, medicine and multiple others. The design rules

  18. A Simple, General Synthetic Route toward Nanoscale Transition Metal Borides.

    Science.gov (United States)

    Jothi, Palani R; Yubuta, Kunio; Fokwa, Boniface P T

    2018-04-01

    Most nanomaterials, such as transition metal carbides, phosphides, nitrides, chalcogenides, etc., have been extensively studied for their various properties in recent years. The similarly attractive transition metal borides, on the contrary, have seen little interest from the materials science community, mainly because nanomaterials are notoriously difficult to synthesize. Herein, a simple, general synthetic method toward crystalline transition metal boride nanomaterials is proposed. This new method takes advantage of the redox chemistry of Sn/SnCl 2 , the volatility and recrystallization of SnCl 2 at the synthesis conditions, as well as the immiscibility of tin with boron, to produce crystalline phases of 3d, 4d, and 5d transition metal nanoborides with different morphologies (nanorods, nanosheets, nanoprisms, nanoplates, nanoparticles, etc.). Importantly, this method allows flexibility in the choice of the transition metal, as well as the ability to target several compositions within the same binary phase diagram (e.g., Mo 2 B, α-MoB, MoB 2 , Mo 2 B 4 ). The simplicity and wide applicability of the method should enable the fulfillment of the great potential of this understudied class of materials, which show a variety of excellent chemical, electrochemical, and physical properties at the microscale. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  20. Fabrication of Metallic Quantum Dot Arrays For Nanoscale Nonlinear Optics

    Science.gov (United States)

    McMahon, M. D.; Hmelo, A. B.; Lopez Magruder, R., III; Weller Haglund, R. A., Jr.; Feldman, L. C.

    2003-03-01

    Ordered arrays of metal nanocrystals embedded in or sequestered on dielectric hosts have potential applications as elements of nonlinear or near-field optical circuits, as sensitizers for fluorescence emitters and photo detectors, and as anchor points for arrays of biological molecules. Metal nanocrystals are strongly confined electronic systems with size-, shape and spatial orientation-dependent optical responses. At the smallest scales (below about 15 nm diameter), their band structure is drastically altered by the small size of the system, and the reduced population of conduction-band electrons. Here we report on the fabrication of two-dimensional ordered metallic nanocrystal arrays, and one-dimensional nanocrystal-loaded waveguides for optical investigations. We have employed strategies for synthesizing metal nanocrystal composites that capitalize on the best features of focused ion beam (FIB) machining and pulsed laser deposition (PLD). The FIB generates arrays of specialized sites; PLD vapor deposition results in the directed self-assembly of Ag nanoparticles nucleated at the FIB generated sites on silicon substrates. We present results based on the SEM, AFM and optical characterization of prototype composites. This research has been supported by the U.S. Department of Energy under grant DE-FG02-01ER45916.

  1. Multipurpose sampler device for liquid metal

    International Nuclear Information System (INIS)

    Nelson, P.A.; Kolba, V.M.; Holmes, J.T.

    1975-01-01

    A device for collecting samples or examining a flow of liquid metal is provided for use with such as a liquid-metal-cooled nuclear reactor. The sampler device includes a casing surrounded by an external heater for establishing an upper isothermal zone and a lower zone for heating the entering liquid metal. One of various inserts is suspended into the isothermal zone where it is surrounded by a shroud tube for directing liquid-metal flow from the heating zone into the top of the insert. Discharge flow from the insert gravitates through a helically wound tube in heat exchange contact with entering liquid-metal flow within the heating zone. The inserts comprise an overflow cup with upper and lower freeze seals, a filter for removing particulate matter, and a fixture for maintaining various sample materials in equilibrium with liquid-metal flow. (U.S.)

  2. Sonochemical Synthesis of Photoluminescent Nanoscale Eu(III-Containing Metal-Organic Frameworks

    Directory of Open Access Journals (Sweden)

    Cheng-an TAO

    2015-11-01

    Full Text Available Nanoscale lanthanide-containing metal-organic frameworks (MOFs have more and more interest due to their great properties and potential applications, but how to construct them easily is still challenging. Here, we present a facile and rapid synthesis of Eu(III-containing Nanoscale MOF (denoted as NMOF under ultrasonic irradiation. The effect of the ratio and the addition order of metal ions and linkers on the morphology and size of MOFs was investigated. It is found that both of the ratio and the addition order can affect the morphology and size of 1.4-benzenedicarboxylic acid(H2BDC -based MOFs, but they show no evident influence on that of H2aBDC-based MOFs. The former exhibit typical emission bands of Eu(III ions, while the latter only show the photoluminescent properties of ligands.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9695

  3. Nanoscale patterning of two metals on silicon surfaces using an ABC triblock copolymer template.

    Science.gov (United States)

    Aizawa, Masato; Buriak, Jillian M

    2006-05-03

    Patterning technologically important semiconductor interfaces with nanoscale metal films is important for applications such as metallic interconnects and sensing applications. Self-assembling block copolymer templates are utilized to pattern an aqueous metal reduction reaction, galvanic displacement, on silicon surfaces. Utilization of a triblock copolymer monolayer film, polystyrene-block-poly(2-vinylpyridine)-block-poly(ethylene oxide) (PS-b-P2VP-b-PEO), with two blocks capable of selective transport of different metal complexes to the surface (PEO and P2VP), allows for chemical discrimination and nanoscale patterning. Different regions of the self-assembled structure discriminate between metal complexes at the silicon surface, at which time they undergo the spontaneous reaction at the interface. Gold deposition from gold(III) compounds such as HAuCl4(aq) in the presence of hydrofluoric acid mirrors the parent block copolymer core structure, whereas silver deposition from Ag(I) salts such as AgNO3(aq) does the opposite, localizing exclusively under the corona. By carrying out gold deposition first and silver second, sub-100-nm gold features surrounded by silver films can be produced. The chemical selectivity was extended to other metals, including copper, palladium, and platinum. The interfaces were characterized by a variety of methods, including scanning electron microscopy, scanning Auger microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy.

  4. Metal oxide nanostructures as gas sensing devices

    CERN Document Server

    Eranna, G

    2016-01-01

    Metal Oxide Nanostructures as Gas Sensing Devices explores the development of an integrated micro gas sensor that is based on advanced metal oxide nanostructures and is compatible with modern semiconductor fabrication technology. This sensor can then be used to create a compact, low-power, handheld device for analyzing air ambience. The book first covers current gas sensing tools and discusses the necessity for miniaturized sensors. It then focuses on the materials, devices, and techniques used for gas sensing applications, such as resistance and capacitance variations. The author addresses the issues of sensitivity, concentration, and temperature dependency as well as the response and recovery times crucial for sensors. He also presents techniques for synthesizing different metal oxides, particularly those with nanodimensional structures. The text goes on to highlight the gas sensing properties of many nanostructured metal oxides, from aluminum and cerium to iron and titanium to zinc and zirconium. The final...

  5. The non-equilibrium Green's function method for nanoscale device simulation

    CERN Document Server

    Pourfath, Mahdi

    2014-01-01

    For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energie...

  6. Micro- and nanoscale devices for the investigation of epigenetics and chromatin dynamics

    Science.gov (United States)

    Aguilar, Carlos A.; Craighead, Harold G.

    2013-10-01

    Deoxyribonucleic acid (DNA) is the blueprint on which life is based and transmitted, but the way in which chromatin -- a dynamic complex of nucleic acids and proteins -- is packaged and behaves in the cellular nucleus has only begun to be investigated. Epigenetic modifications sit 'on top of' the genome and affect how DNA is compacted into chromatin and transcribed into ribonucleic acid (RNA). The packaging and modifications around the genome have been shown to exert significant influence on cellular behaviour and, in turn, human development and disease. However, conventional techniques for studying epigenetic or conformational modifications of chromosomes have inherent limitations and, therefore, new methods based on micro- and nanoscale devices have been sought. Here, we review the development of these devices and explore their use in the study of DNA modifications, chromatin modifications and higher-order chromatin structures.

  7. Energy driven self-organization in nanoscale metallic liquid films.

    Science.gov (United States)

    Krishna, H; Shirato, N; Favazza, C; Kalyanaraman, R

    2009-10-01

    Nanometre thick metallic liquid films on inert substrates can spontaneously dewet and self-organize into complex nanomorphologies and nanostructures with well-defined length scales. Nanosecond pulses of an ultraviolet laser can capture the dewetting evolution and ensuing nanomorphologies, as well as introduce dramatic changes to dewetting length scales due to the nanoscopic nature of film heating. Here, we show theoretically that the self-organization principle, based on equating the rate of transfer of thermodynamic free energy to rate of loss in liquid flow, accurately describes the spontaneous dewetting. Experimental measurements of laser dewetting of Ag and Co liquid films on SiO(2) substrates confirm this principle. This energy transfer approach could be useful for analyzing the behavior of nanomaterials and chemical processes in which spontaneous changes are important.

  8. Investigating Deformation and Failure Mechanisms in Nanoscale Multilayer Metallic Composites

    Energy Technology Data Exchange (ETDEWEB)

    Zbib, Hussein M. [Washington State Univ., Pullman, WA (United States); Bahr, David F. [Purdue Univ., West Lafayette, IN (United States)

    2014-10-22

    Over the history of materials science there are many examples of materials discoveries that have made superlative materials; the strongest, lightest, or toughest material is almost always a goal when we invent new materials. However, often these have been a result of enormous trial and error approaches. A new methodology, one in which researchers design, from the atoms up, new ultra-strong materials for use in energy applications, is taking hold within the science and engineering community. This project focused on one particular new classification of materials; nanolaminate metallic composites. These materials, where two metallic materials are intimately bonded and layered over and over to form sheets or coatings, have been shown over the past decade to reach strengths over 10 times that of their constituents. However, they are not yet widely used in part because while extremely strong (they don’t permanently bend), they are also not particularly tough (they break relatively easily when notched). Our program took a coupled approach to investigating new materials systems within the laminate field. We used computational materials science to explore ways to institute new deformation mechanisms that occurred when a tri-layer, rather than the more common bi-layer system was created. Our predictions suggested that copper-nickel or copper-niobium composites (two very common bi-layer systems) with layer thicknesses on the order of 20 nm and then layered 100’s of times, would be less tough than a copper-nickel-niobium metallic composite of similar thicknesses. In particular, a particular mode of permanent deformation, cross-slip, could be activated only in the tri-layer system; the crystal structure of the other bi-layers would prohibit this particular mode of deformation. We then experimentally validated this predication using a wide range of tools. We utilized a DOE user facility, the Center for Integrated Nanotechnology (CINT), to fabricate, for the first time, these

  9. Elimination device for metal impurities

    International Nuclear Information System (INIS)

    Yanagisawa, Ko.

    1982-01-01

    Purpose: To enable reuse of adsorbing materials by eliminating Fe 3 O 4 films reduced with adsorbing performance by way of electrolytic polishing and then forming fresh membranes using high temperature steams. Constitution: An elimination device is provided to a coolant clean-up system of a reactor for eliminating impurities such as cobalt. The elimination device comprises adsorbing materials made of stainless steel tips or the likes having Fe 3 O 4 films. The adsorbing materials are regenerated by applying an electric current between grid-like cathode plates and anode plates to leach out the Fe 3 O 4 films, washing out the electrolytic solution by cleaning water and then applying steams at high temperature onto the adsorbing materials to thereby form fresh Fe 3 O 4 films again thereon. The regeneration of the adsorbing materials enables to eliminate Co 60 and the like in the primary coolant efficiently. (Moriyama, K.)

  10. Impact of biogenic nanoscale metals Fe, Cu, Zn and Se on reproductive LV chickens

    International Nuclear Information System (INIS)

    Nguyen, Quy Khiem; Nguyen, Van Kien; Nguyen, Khac Thinh; Nguyen, Duy Dieu; Nguyen, Hoai Chau; Tran, Xuan Tin; Nguyen, Huu Cuong; Phung, Duc Tien

    2015-01-01

    Using biogenic nanoscale metals (Fe, Cu, ZnO, Se) to supplement into diet premix of reproductive LV (a Vietnamese Luong Phuong chicken breed) chickens resulted in certain improvement of poultry farming. The experimental data obtained showed that the farming indices depend mainly on the quantity of nanocrystalline metals which replaced the inorganic mineral component in the feed premix. All four experimental groups with different quantities of the replacement nano component grew and developed normally with livability reaching 91 to 94%, hen’s bodyweight at 38 weeks of age and egg weight ranged from 2.53–2.60 kg/hen and 50.86–51.55 g/egg, respectively. All these farming indices together with laying rate, egg productivity and chick hatchability peaked at group 5 with 25% of nanoscale metals compared to the standard inorganic mineral supplement, while feed consumption was lowest. The results also confirmed that nanocrystalline metals Fe, Cu, ZnO and Se supplemented to chicken feed were able to decrease inorganic minerals in the diet premixes at least four times, allowing animals to more effectively absorb feed minerals, consequently decreasing environmental pollution risks. (paper)

  11. Novel plasmonic probes and smart superhydrophobic devices, New tools for forthcoming spectroscopies at the nanoscale

    KAUST Repository

    Giugni, Andrea; Torre, Bruno; Allione, Marco; Gentile, Francesco T.; Candeloro, Patrizio; Coluccio, Maria Laura; Perozziello, Gerardo; Limongi, Tania; Marini, Monica; Raimondo, Raffaella; Tirinato, Luca; Francardi, Marco; Das, Gobind; Proietti Zaccaria, Remo; Falqui, Andrea; Di Fabrizio, Enzo M.

    2014-01-01

    In this work we review novel strategies and new physical effects to achieve compositional and structural recognition at single molecule level. This chapter is divided in two main parts. The first one introduces the strategies currently adopted to investigate matter at few molecules level. Exploiting the capability of surface plasmon polaritons to deliver optical excitation at nanoscale, we introduce a technique relying on a new transport phenomenon with chemical sensitivity and nanometer spatial resolution. The second part describes how micro and nanostructured superhydrofobic textures can concentrate and localize a small number of molecules into a well-defined region, even when only an extremely diluted solution is available. Several applications of these devices as micro- and nano-systems for high-resolution imaging techniques, cell cultures and tissue engineering applications are also discussed.

  12. Novel plasmonic probes and smart superhydrophobic devices, New tools for forthcoming spectroscopies at the nanoscale

    KAUST Repository

    Giugni, Andrea

    2014-08-11

    In this work we review novel strategies and new physical effects to achieve compositional and structural recognition at single molecule level. This chapter is divided in two main parts. The first one introduces the strategies currently adopted to investigate matter at few molecules level. Exploiting the capability of surface plasmon polaritons to deliver optical excitation at nanoscale, we introduce a technique relying on a new transport phenomenon with chemical sensitivity and nanometer spatial resolution. The second part describes how micro and nanostructured superhydrofobic textures can concentrate and localize a small number of molecules into a well-defined region, even when only an extremely diluted solution is available. Several applications of these devices as micro- and nano-systems for high-resolution imaging techniques, cell cultures and tissue engineering applications are also discussed.

  13. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

    2012-01-01

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

  14. The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

    International Nuclear Information System (INIS)

    Barborini, E; Bertolini, G; Repetto, P; Leccardi, M; Vinati, S; Corbelli, G; Milani, P

    2010-01-01

    We have studied in situ the evolution of the electrical resistivity of Fe, Pd, Nb, W and Mo cluster-assembled films during their growth by supersonic cluster beam deposition. We observed resistivity of cluster-assembled films several orders of magnitude larger than the bulk, as well as an increase in resistivity by increasing the film thickness in contrast to what was observed for atom-assembled metallic films. This suggests that the nanoscale morphological features typical of ballistic films growth, such as the minimal cluster-cluster interconnection and the evolution of surface roughness with thickness, are responsible for the observed behaviour.

  15. Nano Superconducting Quantum Interference device: A powerful tool for nanoscale investigations

    Energy Technology Data Exchange (ETDEWEB)

    Granata, Carmine, E-mail: carmine.granata@cnr.it; Vettoliere, Antonio

    2016-02-19

    The magnetic sensing at nanoscale level is a promising and interesting research topic of nanoscience. Indeed, magnetic imaging is a powerful tool for probing biological, chemical and physical systems. The study of small spin cluster, like magnetic molecules and nanoparticles, single electron, cold atom clouds, is one of the most stimulating challenges of applied and basic research of the next years. In particular, the magnetic nanoparticle investigation plays a fundamental role for the modern material science and its relative technological applications like ferrofluids, magnetic refrigeration and biomedical applications, including drug delivery, hyper-thermia cancer treatment and magnetic resonance imaging contrast-agent. Actually, one of the most ambitious goals of the high sensitivity magnetometry is the detection of elementary magnetic moment or spin. In this framework, several efforts have been devoted to the development of a high sensitivity magnetic nanosensor pushing sensing capability to the individual spin level. Among the different magnetic sensors, Superconducting QUantum Interference Devices (SQUIDs) exhibit an ultra high sensitivity and are widely employed in numerous applications. Basically, a SQUID consists of a superconducting ring (sensitive area) interrupted by two Josephson junctions. In the recent years, it has been proved that the magnetic response of nano-objects can be effectively measured by using a SQUID with a very small sensitive area (nanoSQUID). In fact, the sensor noise, expressed in terms of the elementary magnetic moment (spin or Bohr magneton), is linearly dependent on the SQUID loop side length. For this reason, SQUIDs have been progressively miniaturized in order to improve the sensitivity up to few spin per unit of bandwidth. With respect to other techniques, nanoSQUIDs offer the advantage of direct measurement of magnetization changes in small spin systems. In this review, we focus on nanoSQUIDs and its applications. In

  16. Compact device to heat up a liquid metal

    International Nuclear Information System (INIS)

    Blanc, R.; Pelloux, L.

    1981-01-01

    Device for heating a liquid metal, sodium for instance, this device being in one piece and capable of being introduced in one go into the tank containing the liquid metal and comprising heating rods and an electromagnetic pump [fr

  17. Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

    International Nuclear Information System (INIS)

    Ryu, Hyeyeon; Kaelblein, Daniel; Ante, Frederik; Zschieschang, Ute; Kern, Klaus; Klauk, Hagen; Weitz, R Thomas; Schmidt, Oliver G

    2010-01-01

    Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.

  18. Transparent conductors based on microscale/nanoscale materials for high performance devices

    Science.gov (United States)

    Gao, Tongchuan

    Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short

  19. Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography

    KAUST Repository

    Beesley, David J.

    2014-05-27

    Coplanar electrodes formed from asymmetric metals separated on the nanometre length scale are essential elements of nanoscale photonic and electronic devices. Existing fabrication methods typically involve electron-beam lithography - a technique that enables high fidelity patterning but suffers from significant limitations in terms of low throughput, poor scalability to large areas and restrictive choice of substrate and electrode materials. Here, we describe a versatile method for the rapid fabrication of asymmetric nanogap electrodes that exploits the ability of selected self-assembled monolayers to attach conformally to a prepatterned metal layer and thereby weaken adhesion to a subsequently deposited metal film. The method may be carried out under ambient conditions using simple equipment and a minimum of processing steps, enabling the rapid fabrication of nanogap electrodes and optoelectronic devices with aspect ratios in excess of 100,000.2014 Macmillan Publishers Limited. All rights reserved.

  20. Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography

    KAUST Repository

    Beesley, David J.; Semple, James; Jagadamma, Lethy Krishnan; Amassian, Aram; McLachlan, Martyn A.; Anthopoulos, Thomas D.; deMello, John C.

    2014-01-01

    Coplanar electrodes formed from asymmetric metals separated on the nanometre length scale are essential elements of nanoscale photonic and electronic devices. Existing fabrication methods typically involve electron-beam lithography - a technique that enables high fidelity patterning but suffers from significant limitations in terms of low throughput, poor scalability to large areas and restrictive choice of substrate and electrode materials. Here, we describe a versatile method for the rapid fabrication of asymmetric nanogap electrodes that exploits the ability of selected self-assembled monolayers to attach conformally to a prepatterned metal layer and thereby weaken adhesion to a subsequently deposited metal film. The method may be carried out under ambient conditions using simple equipment and a minimum of processing steps, enabling the rapid fabrication of nanogap electrodes and optoelectronic devices with aspect ratios in excess of 100,000.2014 Macmillan Publishers Limited. All rights reserved.

  1. Nanoscale surface modifications of medically relevant metals: state-of-the art and perspectives

    Science.gov (United States)

    Variola, Fabio; Brunski, John B.; Orsini, Giovanna; Tambasco de Oliveira, Paulo; Wazen, Rima; Nanci, Antonio

    2011-02-01

    Evidence that nanoscale surface properties stimulate and guide various molecular and biological processes at the implant/tissue interface is fostering a new trend in designing implantable metals. Cutting-edge expertise and techniques drawn from widely separated fields, such as nanotechnology, materials engineering and biology, have been advantageously exploited to nanoengineer surfaces in ways that control and direct these processes in predictable manners. In this review, we present and discuss the state-of-the-art of nanotechnology-based approaches currently adopted to modify the surface of metals used for orthopedic and dental applications, and also briefly consider their use in the cardiovascular field. The effects of nanoengineered surfaces on various in vitro molecular and cellular events are firstly discussed. This review also provides an overview of in vivo and clinical studies with nanostructured metallic implants, and addresses the potential influence of nanotopography on biomechanical events at interfaces. Ultimately, the objective of this work is to give the readership a comprehensive picture of the current advances, future developments and challenges in the application of the infinitesimally small to biomedical surface science. We believe that an integrated understanding of the in vitro and particularly of the in vivo behavior is mandatory for the proper exploitation of nanostructured implantable metals and, indeed, of all biomaterials.

  2. The sorption of metal ions on nanoscale zero-valent iron

    Directory of Open Access Journals (Sweden)

    Suponik Tomasz

    2017-01-01

    Full Text Available The injection of the colloidal suspensions of nano-iron (nZVI into an aquifer is a novel method of removing metal ions from acidic water. In the batch tests, the equilibrium study of the sorption of metal ions, Cu(II and Zn(II, on Green Tea nanoscale Zero-Valent Ion (GT-nZVI was carried out. The sorption of metal ions on this reactive material was described using the Langmuir, Freundlich and Sips models. This last model described in a better way the sorption equilibrium in the tested range of concentrations and temperature. The value of determination coefficient (R2 for the Sips model, for copper and zinc, was 0.9735 to 0.9995, respectively. GT-nZVI has very good properties in removing Cu(II and Zn(II from acidic water. The high values of qmaxS, the maximum adsorption capacity in the Sips model, amounting to 348.0 and 267.3 mg/g for Cu(II and Zn(II, indicate the high adsorption capacity of GT-nZVI. The analyzed metals have good or very good affinity with GT-nZVI.

  3. Direct observation and quantification of nanoscale spinodal decomposition in super duplex stainless steel weld metals.

    Science.gov (United States)

    Shariq, Ahmed; Hättestrand, Mats; Nilsson, Jan-Olof; Gregori, Andrea

    2009-06-01

    Three variants of super duplex stainless steel weld metals with the basic composition 29Cr-8Ni-2Mo (wt%) were investigated. The nitrogen content of the three materials was 0.22%, 0.33% and 0.37%, respectively. Isothermal heat treatments were performed at 450 degrees C for times up to 243 h. The hardness evolution of the three materials was found to vary with the overall concentration of the nitrogen. Atom probe field ion microscopy (APFIM) was used to directly detect and quantify the degree of spinodal decomposition in different material conditions. 3-DAP atomic reconstruction clearly illustrate nanoscale variation of iron rich (alpha) and chromium rich (alpha') phases. A longer ageing time produces a coarser microstructure with larger alpha and alpha' domains. Statistical evaluation of APFIM data showed that phase separation was significant already after 1 h of ageing that gradually became more pronounced. Although nanoscale concentration variation was evident, no significant influence of overall nitrogen content on the degree of spinodal decomposition was found.

  4. Study of quantum noise in nanoscale devices via the de Broglie-Bohm formulation

    International Nuclear Information System (INIS)

    Oriols, X.

    2005-01-01

    Full text: The experimental current measured in quantum-based devices fluctuates around average values, even at static conditions. Such current fluctuations are a consequence of the wave-particle duality. Roughly speaking, the undulatory nature of electrons (Schroedinger equation) controls the average current, while the particle like (discrete) nature of electrons determines the fluctuations. Such randomness in the electron flux of mesoscopic systems is known as quantum noise. The de Broglie-Bohm (dBB) interpretation of the quantum theory provides an excellent framework to study quantum noise because it describes phase-coherent phenomena in terms of well-defined quantum trajectories. This theory was initiated by de Broglie in 1926 and fully clarified by Bohm in 1952. In this conference we will present our quantum transport formalism, based on the dBB theory, to study fluctuations in mesoscopic systems. First, we show the excellent agreement between our noise results and those obtained by other approaches for simple tunnelling system. In addition, we will show how our quantum noise approach can directly include the non-trivial many-particle Coulomb interaction among electrons, via the instantaneous self-consistent solution of the Poisson and the Schroedinger equations. As a test, we study standard resonant tunnelling diodes for double and triple barrier. The current fluctuations obtained with dBB theory are in complete agreement with experimental results. We will also present noise results for time-dependent scenarios driven by very high frequencies (few THz), which are comparable to the inverse of the electron transit time in nanoscale devices. Under such conditions, the tunnelling phenomenology is clearly enriched leading to experimental evidences for the dBB theory. (author)

  5. Recent advances in nanoscale-metal assisted biochar derived from waste biomass used for heavy metals removal.

    Science.gov (United States)

    Ho, Shih-Hsin; Zhu, Shishu; Chang, Jo-Shu

    2017-12-01

    Pollution of heavy metals (HMs) is a detrimental treat to human health and need to be cleaned up in a proper way. Biochar (BC), a low-cost and "green" adsorbent, has attracted significant attention due to its considerable HMs removal capacity. In particular, nano-metals have recently been used to assist BC in improving its reactivity, surface texture and magnetism. Synthesis methods and metal precursors greatly influence the properties and structures of the nanocomposites, thereby affecting their HMs removal performance. This review presents advances in synthesis methods, formation mechanisms and surface characteristics of BC nanocomposites, along with the discussions on HMs removal mechanisms and the effects of environmental factors on HMs removal efficiency. Performance of using BC nanocomposites to remediate real HMs-containing wastewater and issues associated with its process scale-up are also discussed. This review aims to provide useful information to facilitate the development of HMs removal by nanoscale-metal assisted BC. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Azobenzenes as light-controlled molecular electronic switches in nanoscale metal-molecule-metal junctions.

    Science.gov (United States)

    Mativetsky, Jeffrey M; Pace, Giuseppina; Elbing, Mark; Rampi, Maria A; Mayor, Marcel; Samorì, Paolo

    2008-07-23

    Conductance switching associated with the photoisomerization of azobenzene-based (Azo) molecules was observed in nanoscopic metal-molecule-metal junctions. The junctions were formed by using a conducting atomic force microscope (C-AFM) approach, where a metallic AFM tip was used to electrically contact a gold-supported Azo self-assembled monolayer. The measured 30-fold increase in conductance is consistent with the expected decrease in tunneling barrier length resulting from the conformational change of the Azo molecule.

  7. Nanoscale “Quantum” Islands on Metal Substrates: Microscopy Studies and Electronic Structure Analyses

    Directory of Open Access Journals (Sweden)

    Da-Jiang Liu

    2010-07-01

    Full Text Available Confinement of electrons can occur in metal islands or in continuous films grown heteroepitaxially upon a substrate of a different metal or on a metallic alloy. Associated quantum size effects (QSE can produce a significant height-dependence of the surface free energy for nanoscale thicknesses of up to 10–20 layers. This may suffice to induce height selection during film growth. Scanning STM analysis has revealed remarkable flat-topped or mesa-like island and film morphologies in various systems. We discuss in detail observations of QSE and associated film growth behavior for Pb/Cu(111, Ag/Fe(100, and Cu/fcc-Fe/Cu(100 [A/B or A/B/A], and for Ag/NiAl(110 with brief comments offered for Fe/Cu3Au(001 [A/BC binary alloys]. We also describe these issues for Ag/5-fold i-Al-Pd-Mn and Bi/5-fold i-Al-Cu-Fe [A/BCD ternary icosohedral quasicrystals]. Electronic structure theory analysis, either at the level of simple free electron gas models or more sophisticated Density Functional Theory calculations, can provide insight into the QSE-mediated thermodynamic driving force underlying height selection.

  8. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    International Nuclear Information System (INIS)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin

    2011-01-01

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  9. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    KAUST Repository

    Kumar, Naresh; Zoladek-Lemanczyk, Alina; Guilbert, Anne A. Y.; Su, Weitao; Tuladhar, Sachetan M.; Kirchartz, Thomas; Schroeder, Bob C.; McCulloch, Iain; Nelson, Jenny; Roy, Debdulal; Castro, Fernando A.

    2017-01-01

    resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale

  10. Pseudo-One-Dimensional Magnonic Crystals for High-Frequency Nanoscale Devices

    Science.gov (United States)

    Banerjee, Chandrima; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

    2017-07-01

    The synthetic magnonic crystals (i.e., periodic composites consisting of different magnetic materials) form one fascinating class of emerging research field, which aims to command the process and flow of information by means of spin waves, such as in magnonic waveguides. One of the intriguing features of magnonic crystals is the presence and tunability of band gaps in the spin-wave spectrum, where the high attenuation of the frequency bands can be utilized for frequency-dependent control on the spin waves. However, to find a feasible way of band tuning in terms of a realistic integrated device is still a challenge. Here, we introduce an array of asymmetric saw-tooth-shaped width-modulated nanoscale ferromagnetic waveguides forming a pseudo-one-dimensional magnonic crystal. The frequency dispersion of collective modes measured by the Brillouin light-scattering technique is compared with the band diagram obtained by numerically solving the eigenvalue problem derived from the linearized Landau-Lifshitz magnetic torque equation. We find that the magnonic band-gap width, position, and the slope of dispersion curves are controllable by changing the angle between the spin-wave propagation channel and the magnetic field. The calculated profiles of the dynamic magnetization reveal that the corrugation at the lateral boundary of the waveguide effectively engineers the edge modes, which forms the basis of the interactive control in magnonic circuits. The results represent a prospective direction towards managing the internal field distribution as well as the dispersion properties, which find potential applications in dynamic spin-wave filters and magnonic waveguides in the gigahertz frequency range.

  11. Heavy metal removal using nanoscale zero-valent iron (nZVI): Theory and application

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shaolin, E-mail: lishaolin@tongji.edu.cn; Wang, Wei; Liang, Feipeng; Zhang, Wei-xian, E-mail: zhangwx@tongji.edu.cn

    2017-01-15

    Highlights: • nZVI is able to perform fast and simultaneous removal of different heavy metal ions. • Fast separation and seeding effect of nZVI facilities its application in wastewater. • A novel process of E{sub h}-controlled reactor, nZVI separator and reuse is proposed. • E{sub h}-controlled system and nZVI recirculation increase material efficiency of nZVI. • The process produces stable effluent and is effective in wastewater treatment. - Abstract: Treatment of wastewater containing heavy metals requires considerations on simultaneous removal of different ions, system reliability and quick separation of reaction products. In this work, we demonstrate that nanoscale zero-valent iron (nZVI) is an ideal reagent for removing heavy metals from wastewater. Batch experiments show that nZVI is able to perform simultaneous removal of different heavy metals and arsenic; reactive nZVI in uniform dispersion brings rapid changes in solution E{sub h}, enabling a facile way for reaction regulation. Microscope characterizations and settling experiments suggest that nZVI serves as solid seeds that facilitate products separation. A treatment process consisting of E{sub h}-controlled nZVI reaction, gravitational separation and nZVI recirculation is then demonstrated. Long-term (>12 months) operation shows that the process achieves >99.5% removal of As, Cu and a number of other toxic elements. The E{sub h}-controlled reaction system sustains a highly-reducing condition in reactor and reduces nZVI dosage. The process produces effluent of stable quality that meets local discharge guidelines. The gravitational separator shows high efficacy of nZVI recovery and the recirculation improves nZVI material efficiency, resulting in extraordinarily high removal capacities ((245 mg As + 226 mg-Cu)/g-nZVI). The work provides proof that nanomaterials can offer truly green and cost-effective solutions for wastewater treatment.

  12. Plastic deformation and failure mechanisms in nano-scale notched metallic glass specimens under tensile loading

    Science.gov (United States)

    Dutta, Tanmay; Chauniyal, Ashish; Singh, I.; Narasimhan, R.; Thamburaja, P.; Ramamurty, U.

    2018-02-01

    In this work, numerical simulations using molecular dynamics and non-local plasticity based finite element analysis are carried out on tensile loading of nano-scale double edge notched metallic glass specimens. The effect of acuteness of notches as well as the metallic glass chemical composition or internal material length scale on the plastic deformation response of the specimens are studied. Both MD and FE simulations, in spite of the fundamental differences in their nature, indicate near-identical deformation features. Results show two distinct transitions in the notch tip deformation behavior as the acuity is increased, first from single shear band dominant plastic flow localization to ligament necking, and then to double shear banding in notches that are very sharp. Specimens with moderately blunt notches and composition showing wider shear bands or higher material length scale characterizing the interaction stress associated with flow defects display profuse plastic deformation and failure by ligament necking. These results are rationalized from the role of the interaction stress and development of the notch root plastic zones.

  13. Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

    Science.gov (United States)

    Shima, Hisashi; Nakano, Takashi; Akinaga, Hiro

    2010-05-01

    The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 °C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

  14. Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

    Science.gov (United States)

    Li, Gong Ping; Chen, Rui; Guo, Dong Lai; Wong, Lai Mun; Wang, Shi Jie; Sun, Han Dong; Wu, Tom

    2011-08-01

    Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in

  15. A novel nonlinear nano-scale wear law for metallic brake pads.

    Science.gov (United States)

    Patil, Sandeep P; Chilakamarri, Sri Harsha; Markert, Bernd

    2018-05-03

    In the present work, molecular dynamics simulations were carried out to investigate the temperature distribution as well as the fundamental friction characteristics such as the coefficient of friction and wear in a disc-pad braking system. A wide range of constant velocity loadings was applied on metallic brake pads made of aluminium, copper and iron with different rotating speeds of a diamond-like carbon brake disc. The average temperature of Newtonian atoms and the coefficient of friction of the brake pad were investigated. The resulting relationship of the average temperature with the speed of the disc as well as the applied loading velocity can be described by power laws. The quantitative description of the volume lost from the brake pads was investigated, and it was found that the volume lost increases linearly with the sliding distance. Our results show that Archard's linear wear law is not applicable to a wide range of normal loads, e.g., in cases of low normal load where the wear rate was increased considerably and in cases of high load where there was a possibility of severe wear. In this work, a new formula for the brake pad wear in a disc brake assembly is proposed, which displays a power law relationship between the lost volume of the metallic brake pads per unit sliding distance and the applied normal load with an exponent of 0.62 ± 0.02. This work provides new insights into the fundamental understanding of the wear mechanism at the nano-scale leading to a new bottom-up wear law for metallic brake pads.

  16. Performance enhancement of metal nanowire-based transparent electrodes by electrically driven nanoscale nucleation of metal oxides

    Science.gov (United States)

    Shiau, Yu-Jeng; Chiang, Kai-Ming; Lin, Hao-Wu

    2015-07-01

    Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq-1), a high transmission (92% at 550 nm), a high figure of merit (FOM; up to σDC/σOp = 340) and can be applied to wide range of next-generation flexible optoelectronic devices.Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq

  17. Nanoscale Metal-Organic Frameworks Decorated with Graphene Oxide for Magnetic Resonance Imaging Guided Photothermal Therapy.

    Science.gov (United States)

    Meng, Jing; Chen, Xiujin; Tian, Yang; Li, Zhongfeng; Zheng, Qingfeng

    2017-12-11

    Imaging-guided photothermal therapy (PTT) provides an attractive way to treat cancer. A composite material of a nanoscale metal-organic framework (NMOF) and graphene oxide (GO) has been prepared for potential use in tumor-guided PTT with magnetic resonance imaging (MRI). The NMOFs containing Fe 3+ were prefabricated with an octahedral morphology through a solvothermal reaction to offer a strong T 2 -weighted contrast in MRI. Then the NMOFs were decorated with GO nanosheets, which had good photothermal properties. After decoration, zeta-potential characterization shows that the aqueous stability of the composite material is enhanced, UV/Vis and near-infrared (NIR) spectra confirm that NIR absorption is also increased, and photothermal experiments reveal that the composite materials express higher photothermal conversion effects and conversion stability. The fabricated NMOF/GO shows low cytotoxicity, effective T 2 -weighted contrast of MRI, and positive PTT behavior for a tumor model in vitro. The performance of the composite NMOF/GO for MRI and PTT was also tested upon injection into A549 tumor-bearing mice. The studies in vivo revealed that the fabricated NMOF/GO was efficient in T 2 -weighted imaging and ablation of the A549 tumor with low cytotoxicity, which implied that the prepared composite contrast agent was a potential multifunctional nanotheranostic agent. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Synthesis, fabrication, and spectroscopy of nano-scale photonic noble metal materials

    Science.gov (United States)

    Egusa, Shunji

    Nanometer is an interesting scale for physicists, chemists, and materials scientists, in a sense that it lies between the macroscopic and the atomic scales. In this regime, materials exhibit distinct physical and chemical properties that are clearly different from those of atoms or macroscopic bulk. This thesis is concerned about both physics and chemistry of noble metal nano-structures. Novel chemical syntheses and physical fabrications of various noble metal nano-structures, and the development of spectroscopic techniques for nano-structures are presented. Scanning microscopy/spectroscopy techniques inherently perturbs the true optical responses of the nano-structures. However, by using scanning tunneling microscope (STM) tip as the nanometer-confined excitation source of surface plasmons in the samples, and subsequently collecting the signals in the Fourier space, it is shown that the tip-perturbed part of the signals can be deconvoluted. As a result, the collected signal in this approach is the pure response of the sample. Coherent light is employed to study the optical response of nano-structures, in order to avoid complication from tip-perturbation as discussed above. White-light super-continuum excites the nano-structure, the monolayer of Au nanoparticles self-assembled on silicon nitride membrane substrates. The coherent excitation reveals asymmetric surface plasmon resonance in the nano-structures. One of the most important issues in nano-scale science is to gain control over the shape, size, and assembly of nanoparticles. A novel method is developed to chemically synthesize ligand-passivated atomic noble metal clusters in solution phase. The method, named thermal decomposition method, enables facile yet robust synthesis of fluorescent atomic clusters. Thus synthesized atomic clusters are very stable, and show behaviors of quantum dots. A novel and versatile approach for creation of nanoparticle arrays is developed. This method is different from the

  19. Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

    Science.gov (United States)

    Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

    2017-10-17

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

  20. Nanoscale phase change memory materials.

    Science.gov (United States)

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  1. Effects of nanoscale contacts to graphene

    NARCIS (Netherlands)

    Franklin, A.D.; Han, S.-J.; Bol, A.A.; Haensch, W.

    2011-01-01

    Understanding and optimizing transport between metal contacts and graphene is one of the foremost challenges for graphene devices. In this letter, we present the first results on the effects of reducing contact dimensions to the nanoscale in single-layer graphene transistors. Using noninvasive

  2. Metallization of bacterial cellulose for electrical and electronic device manufacture

    Science.gov (United States)

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  3. Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

    Science.gov (United States)

    Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

    2017-12-13

    We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

  4. Nanoscale zero-valent iron for metal/metalloid removal from model hydraulic fracturing wastewater.

    Science.gov (United States)

    Sun, Yuqing; Lei, Cheng; Khan, Eakalak; Chen, Season S; Tsang, Daniel C W; Ok, Yong Sik; Lin, Daohui; Feng, Yujie; Li, Xiang-Dong

    2017-06-01

    Nanoscale zero-valent iron (nZVI) was tested for the removal of Cu(II), Zn(II), Cr(VI), and As(V) in model saline wastewaters from hydraulic fracturing. Increasing ionic strength (I) from 0.35 to 4.10 M (Day-1 to Day-90 wastewaters) increased Cu(II) removal (25.4-80.0%), inhibited Zn(II) removal (58.7-42.9%), slightly increased and then reduced Cr(VI) removal (65.7-44.1%), and almost unaffected As(V) removal (66.7-75.1%) by 8-h reaction with nZVI at 1-2 g L -1 . The removal kinetics conformed to pseudo-second-order model, and increasing I decreased the surface area-normalized rate coefficient (k sa ) of Cu(II) and Cr(VI), probably because agglomeration of nZVI in saline wastewaters restricted diffusion of metal(loid)s to active surface sites. Increasing I induced severe Fe dissolution from 0.37 to 0.77% in DIW to 4.87-13.0% in Day-90 wastewater; and Fe dissolution showed a significant positive correlation with Cu(II) removal. With surface stabilization by alginate and polyvinyl alcohol, the performance of entrapped nZVI in Day-90 wastewater was improved for Zn(II) and Cr(VI), and Fe dissolution was restrained (3.20-7.36%). The X-ray spectroscopic analysis and chemical speciation modelling demonstrated that the difference in removal trends from Day-1 to Day-90 wastewaters was attributed to: (i) distinctive removal mechanisms of Cu(II) and Cr(VI) (adsorption, (co-)precipitation, and reduction), compared to Zn(II) (adsorption) and As(V) (bidentate inner-sphere complexation); and (ii) changes in solution speciation (e.g., from Zn 2+ to ZnCl 3 - and ZnCl 4 2- ; from CrO 4 2- to CaCrO 4 complex). Bare nZVI was susceptible to variations in wastewater chemistry while entrapped nZVI was more stable and environmentally benign, which could be used to remove metals/metalloids before subsequent treatment for reuse/disposal. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. NASA GSFC Strategic Nanotechnology Interests: Symposium on High-Rate Nanoscale Printing for Devices and Structures

    Science.gov (United States)

    Ericsson, Aprille J.

    2014-01-01

    The seminars invitees include representatives from industry, nonprofit research facility and universities. The presentation provides an overview of the NASAGSFC locations, technical capabilities and applied nanotechnology interests. Initially presented are advances by the broader technological communities on current miniaturized multiscale advanced manufacturing and 3D printing products on the micro and macro scale. Briefly assessed is the potential of moving toward the nanoscale for possible space flight applications and challenges. Lastly, highlighted are GSFCs current successes in nano-technology developments and targeted future applications.

  6. Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices.

    Science.gov (United States)

    Aragonès, Albert C; Aravena, Daniel; Valverde-Muñoz, Francisco J; Real, José Antonio; Sanz, Fausto; Díez-Pérez, Ismael; Ruiz, Eliseo

    2017-04-26

    The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their Fermi levels for one of the electronic spins only. The key ingredient for the metal surface is to provide an efficient spin texture induced by the spin-orbit coupling in the topological surface states that results in an efficient spin-dependent interaction with the orbitals of the molecule. The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.

  7. Harnessing microbial subsurface metal reduction activities to synthesise nanoscale cobalt ferrite with enhanced magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Coker, Victoria S.; Telling, Neil D.; van der Laan, Gerrit; Pattrick, Richard A.D.; Pearce, Carolyn I.; Arenholz, Elke; Tuna, Floriana; Winpenny, Richard E.P.; Lloyd, Jonathan R.

    2009-03-24

    Nanoscale ferrimagnetic particles have a diverse range of uses from directed cancer therapy and drug delivery systems to magnetic recording media and transducers. Such applications require the production of monodisperse nanoparticles with well-controlled size, composition, and magnetic properties. To fabricate these materials purely using synthetic methods is costly in both environmental and economical terms. However, metal-reducing microorganisms offer an untapped resource to produce these materials. Here, the Fe(III)-reducing bacterium Geobacter sulfurreducens is used to synthesize magnetic iron oxide nanoparticles. A combination of electron microscopy, soft X-ray spectroscopy, and magnetometry techniques was employed to show that this method of biosynthesis results in high yields of crystalline nanoparticles with a narrow size distribution and magnetic properties equal to the best chemically synthesized materials. In particular, it is demonstrated here that cobalt ferrite (CoFe{sub 2}O{sub 4}) nanoparticles with low temperature coercivity approaching 8 kOe and an effective anisotropy constant of {approx} 10{sup 6} erg cm{sup -3} can be manufactured through this biotechnological route. The dramatic enhancement in the magnetic properties of the nanoparticles by the introduction of high quantities of Co into the spinel structure represents a significant advance over previous biomineralization studies in this area using magnetotactic bacteria. The successful production of nanoparticulate ferrites achieved in this study at high yields could open up the way for the scaled-up industrial manufacture of nanoparticles using environmentally benign methodologies. Production of ferromagnetic nanoparticles for pioneering cancer therapy, drug delivery, chemical sensors, catalytic activity, photoconductive materials, as well as more traditional uses in data storage embodies a large area of inorganic synthesis research. In particular, the addition of transition metals other than

  8. Harnessing microbial subsurface metal reduction activities to synthesize nanoscale cobalt ferrite with enhanced magnetic properties

    International Nuclear Information System (INIS)

    Coker, Victoria S.; Telling, Neil D.; van der Laan, Gerrit; Pattrick, Richard A.D.; Pearce, Carolyn I.; Arenholz, Elke; Tuna, Floriana; Winpenny, Richard E.P.; Lloyd, Jonathan R.

    2009-01-01

    Nanoscale ferrimagnetic particles have a diverse range of uses from directed cancer therapy and drug delivery systems to magnetic recording media and transducers. Such applications require the production of monodisperse nanoparticles with well-controlled size, composition, and magnetic properties. To fabricate these materials purely using synthetic methods is costly in both environmental and economical terms. However, metal-reducing microorganisms offer an untapped resource to produce these materials. Here, the Fe(III)-reducing bacterium Geobacter sulfurreducens is used to synthesize magnetic iron oxide nanoparticles. A combination of electron microscopy, soft X-ray spectroscopy, and magnetometry techniques was employed to show that this method of biosynthesis results in high yields of crystalline nanoparticles with a narrow size distribution and magnetic properties equal to the best chemically synthesized materials. In particular, it is demonstrated here that cobalt ferrite (CoFe 2 O 4 ) nanoparticles with low temperature coercivity approaching 8 kOe and an effective anisotropy constant of ∼ 10 6 erg cm -3 can be manufactured through this biotechnological route. The dramatic enhancement in the magnetic properties of the nanoparticles by the introduction of high quantities of Co into the spinel structure represents a significant advance over previous biomineralization studies in this area using magnetotactic bacteria. The successful production of nanoparticulate ferrites achieved in this study at high yields could open up the way for the scaled-up industrial manufacture of nanoparticles using environmentally benign methodologies. Production of ferromagnetic nanoparticles for pioneering cancer therapy, drug delivery, chemical sensors, catalytic activity, photoconductive materials, as well as more traditional uses in data storage embodies a large area of inorganic synthesis research. In particular, the addition of transition metals other than Fe into the structure

  9. Metal sulfide electrodes and energy storage devices thereof

    Science.gov (United States)

    Chiang, Yet-Ming; Woodford, William Henry; Li, Zheng; Carter, W. Craig

    2017-02-28

    The present invention generally relates to energy storage devices, and to metal sulfide energy storage devices in particular. Some aspects of the invention relate to energy storage devices comprising at least one flowable electrode, wherein the flowable electrode comprises an electroactive metal sulfide material suspended and/or dissolved in a carrier fluid. In some embodiments, the flowable electrode further comprises a plurality of electronically conductive particles suspended and/or dissolved in the carrier fluid, wherein the electronically conductive particles form a percolating conductive network. An energy storage device comprising a flowable electrode comprising a metal sulfide electroactive material and a percolating conductive network may advantageously exhibit, upon reversible cycling, higher energy densities and specific capacities than conventional energy storage devices.

  10. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser

    2012-11-21

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Nanoscale film formation of ferritin and its application to biomemory device

    International Nuclear Information System (INIS)

    Kim, Sang-Uk; Lee, Taek; Lee, Jin-Ho; Yagati, Ajay Kumar; Min, Junhong; Choi, Jeong-Woo

    2009-01-01

    A redox protein, ferritin is used as a functional constituent of the developed biomemory device. The concept of molecular device mainly depends on the solidification of biomolecules of interest and on the realization of properties of molecule immobilized on a selected substrate. Here, we immobilized the biomolecule, ferritin protein on gold substrate using an organic linker 11-mercaptoundecanoic acid (11-MUA). The immobilization of the protein on the gold substrate was confirmed by surface plasmon spectroscopy, Raman spectroscopy, and atomic force microscopy (AFM). The basic two memory functions, reading and writing of the developed biomemory device, were investigated by open-circuit potential amperometry (OCPA) using the redox property of the biomolecule of interest. The surface topography investigation by scanning tunneling microscopy (STM) shows that the robustness of the ferritin-based biomemory device was validated by the repeated electrochemical performance. These results show the developed biomemory device as a step towards the protein-based nanobiochip.

  12. Nanoscale surface modifications to control capillary flow characteristics in PMMA microfluidic devices

    Directory of Open Access Journals (Sweden)

    Mukhopadhyay Subhadeep

    2011-01-01

    Full Text Available Abstract Polymethylmethacrylate (PMMA microfluidic devices have been fabricated using a hot embossing technique to incorporate micro-pillar features on the bottom wall of the device which when combined with either a plasma treatment or the coating of a diamond-like carbon (DLC film presents a range of surface modification profiles. Experimental results presented in detail the surface modifications in the form of distinct changes in the static water contact angle across a range from 44.3 to 81.2 when compared to pristine PMMA surfaces. Additionally, capillary flow of water (dyed to aid visualization through the microfluidic devices was recorded and analyzed to provide comparison data between filling time of a microfluidic chamber and surface modification characteristics, including the effects of surface energy and surface roughness on the microfluidic flow. We have experimentally demonstrated that fluid flow and thus filling time for the microfluidic device was significantly faster for the device with surface modifications that resulted in a lower static contact angle, and also that the incorporation of micro-pillars into a fluidic device increases the filling time when compared to comparative devices.

  13. The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

    Science.gov (United States)

    Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

    2017-08-01

    Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

  14. Laser direct writing of micro- and nano-scale medical devices

    Science.gov (United States)

    Gittard, Shaun D; Narayan, Roger J

    2010-01-01

    Laser-based direct writing of materials has undergone significant development in recent years. The ability to modify a variety of materials at small length scales and using short production times provides laser direct writing with unique capabilities for fabrication of medical devices. In many laser-based rapid prototyping methods, microscale and submicroscale structuring of materials is controlled by computer-generated models. Various laser-based direct write methods, including selective laser sintering/melting, laser machining, matrix-assisted pulsed-laser evaporation direct write, stereolithography and two-photon polymerization, are described. Their use in fabrication of microstructured and nanostructured medical devices is discussed. Laser direct writing may be used for processing a wide variety of advanced medical devices, including patient-specific prostheses, drug delivery devices, biosensors, stents and tissue-engineering scaffolds. PMID:20420557

  15. Device for removing impurities from liquid metals

    International Nuclear Information System (INIS)

    Naito, Kesahiro; Yokota, Norikatsu; Shimoyashiki, Shigehiro; Takahashi, Kazuo; Ishida, Tomio.

    1984-01-01

    Purpose: To attain highly reliable and efficient impurity removal by forming temperature distribution the impurity removing device thereby providing the function of corrosion product trap, nuclear fission product trap and cold trap under the conditions suitable to the impurity removing materials. Constitution: The impurity removing device comprises a container containing impurity removing fillers. The fillers comprise material for removing corrosion products, material for removing nuclear fission products and material for removing depositions from liquid sodium. The positions for the respective materials are determined such that the materials are placed under the temperature conditions easy to attain their function depending on the temperature distribution formed in the removing device, whereby appropriate temperature condition is set to each of the materials. (Yoshino, Y.)

  16. Nanoscale architectural tuning of parylene patch devices to control therapeutic release rates

    International Nuclear Information System (INIS)

    Pierstorff, Erik; Lam, Robert; Ho, Dean

    2008-01-01

    The advent of therapeutic functionalized implant coatings has significantly impacted the medical device field by enabling prolonged device functionality for enhanced patient treatment. Incorporation of drug release from a stable, biocompatible surface is instrumental in decreasing systemic application of toxic therapeutics and increasing the lifespan of implants by the incorporation of antibiotics and anti-inflammatories. In this study, we have developed a parylene C-based device for controlled release of Doxorubicin, an anti-cancer chemotherapy and definitive read-out for preserved drug functionality, and further characterized the parylene deposition condition-dependent tunability of drug release. Drug release is controlled by the deposition of a layer of 20-200 nm thick parylene over the drug layer. This places a porous layer above the Doxorubicin, limiting drug elution based on drug accessibility to solvent and the solvent used. An increase in the thickness of the porous top layer prolongs the elution of active drug from the device from, in the conditions tested, the order of 10 min to the order of 2 d in water and from the order of 10 min to no elution in PBS. Thus, the controlled release of an anti-cancer therapeutic has been achieved via scalably fabricated, parylene C-encapsulated drug delivery devices.

  17. Investigation on the special Smith-Purcell radiation from a nano-scale rectangular metallic grating

    International Nuclear Information System (INIS)

    Li, Weiwei; Liu, Weihao; Jia, Qika

    2016-01-01

    The special Smith-Purcell radiation (S-SPR), which is from the radiating eigen modes of a grating, has remarkable higher intensity than the ordinary Smith-Purcell radiation. Yet in previous studies, the gratings were treated as perfect conductor without considering the surface plasmon polaritons (SPPs) which are of significance for the nano-scale gratings especially in the optical region. In present paper, the rigorous theoretical investigations on the S-SPR from a nano-grating with SPPs taken into consideration are carried out. The dispersion relations and radiation characteristics are obtained, and the results are verified by simulations. According to the analyses, the tunable light radiation can be achieved by the S-SPR from a nano-grating, which offers a new prospect for developing the nano-scale light sources.

  18. Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

    Science.gov (United States)

    Sano, Nobuyuki

    2011-03-01

    It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

  19. On the accuracy of current TCAD hot carrier injection models in nanoscale devices

    Science.gov (United States)

    Zaka, Alban; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, Raphaël; Rideau, Denis; Garetto, Davide; Dornel, Erwan; Singer, Julien; Pananakakis, Georges; Tavernier, Clément; Jaouen, Hervé

    2010-12-01

    In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model - FM [1], the Lucky Electron Model - LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation - SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.

  20. Micro-/nanoscale multi-field coupling in nonlinear photonic devices

    Science.gov (United States)

    Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

    2017-08-01

    The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

  1. Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO3 using ultrathin porous alumina masks

    International Nuclear Information System (INIS)

    Liu, Dongqing; Zhang, Chaoyang; Wang, Nannan; Cheng, Haifeng; Wang, Guang; Shao, Zhengzheng; Zhu, Xuan

    2014-01-01

    Nanoscale electrochemical metallization (ECM) memories based on amorphous La 1−x Sr x MnO 3 (a-LSMO) were fabricated using ultrathin porous alumina masks. The ultrathin alumina masks, with thicknesses of about 200 nm and pore diameters of about 80 nm, were fabricated through a typical two-step anodization electrochemical procedure and transferred onto conductive Pt/Ti/SiO 2 /Si substrates. Resistive switching (RS) properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope. The cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 10 2 . Reproducible RS behaviours on the same ECM cell and the I–V cycles obtained from different ECM cells ensured that the RS properties in nanoscale Ag/a-LSMO/Pt cells are reproducible and reliable. This work provides an effective approach for the preparation of nanostructured large-scale ordered ECM memories or memristors. (paper)

  2. Microfluidic paper-based analytical device for particulate metals.

    Science.gov (United States)

    Mentele, Mallory M; Cunningham, Josephine; Koehler, Kirsten; Volckens, John; Henry, Charles S

    2012-05-15

    A microfluidic paper-based analytical device (μPAD) fabricated by wax printing was designed to assess occupational exposure to metal-containing aerosols. This method employs rapid digestion of particulate metals using microliters of acid added directly to a punch taken from an air sampling filter. Punches were then placed on a μPAD, and digested metals were transported to detection reservoirs upon addition of water. These reservoirs contained reagents for colorimetric detection of Fe, Cu, and Ni. Dried buffer components were used to set the optimal pH in each detection reservoir, while precomplexation agents were deposited in the channels between the sample and detection zones to minimize interferences from competing metals. Metal concentrations were quantified from color intensity images using a scanner in conjunction with image processing software. Reproducible, log-linear calibration curves were generated for each metal, with method detection limits ranging from 1.0 to 1.5 μg for each metal (i.e., total mass present on the μPAD). Finally, a standard incineration ash sample was aerosolized, collected on filters, and analyzed for the three metals of interest. Analysis of this collected aerosol sample using a μPAD showed good correlation with known amounts of the metals present in the sample. This technology can provide rapid assessment of particulate metal concentrations at or below current regulatory limits and at dramatically reduced cost.

  3. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  4. Nanoscale structure, dynamics and power conversion efficiency correlations in small molecule and oligomer-based photovoltaic devices

    Science.gov (United States)

    Szarko, Jodi M.; Guo, Jianchang; Rolczynski, Brian S.; Chen, Lin X.

    2011-01-01

    Photovoltaic functions in organic materials are intimately connected to interfacial morphologies of molecular packing in films on the nanometer scale and molecular levels. This review will focus on current studies on correlations of nanoscale morphologies in organic photovoltaic (OPV) materials with fundamental processes relevant to photovoltaic functions, such as light harvesting, exciton splitting, exciton diffusion, and charge separation (CS) and diffusion. Small molecule photovoltaic materials will be discussed here. The donor and acceptor materials in small molecule OPV devices can be fabricated in vacuum-deposited, multilayer, crystalline thin films, or spin-coated together to form blended bulk heterojunction (BHJ) films. These two methods result in very different morphologies of the solar cell active layers. There is still a formidable debate regarding which morphology is favored for OPV optimization. The morphology of the conducting films has been systematically altered; using variations of the techniques above, the whole spectrum of film qualities can be fabricated. It is possible to form a highly crystalline material, one which is completely amorphous, or an intermediate morphology. In this review, we will summarize the past key findings that have driven organic solar cell research and the current state-of-the-art of small molecule and conducting oligomer materials. We will also discuss the merits and drawbacks of these devices. Finally, we will highlight some works that directly compare the spectra and morphology of systematically elongated oligothiophene derivatives and compare these oligomers to their polymer counterparts. We hope this review will shed some new light on the morphology differences of these two systems. PMID:22110870

  5. Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

    International Nuclear Information System (INIS)

    Lee, Jun-Ha; Lee, Hoong-Joo

    2005-01-01

    We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

  6. Conductive polymer/metal composites for interconnect of flexible devices

    Science.gov (United States)

    Kawakita, Jin; Hashimoto Shinoda, Yasuo; Shuto, Takanori; Chikyow, Toyohiro

    2015-06-01

    An interconnect of flexible and foldable devices based on advanced electronics requires high electrical conductivity, flexibility, adhesiveness on a plastic substrate, and efficient productivity. In this study, we investigated the applicability of a conductive polymer/metal composite to the interconnect of flexible devices. By combining an inkjet process and a photochemical reaction, micropatterns of a polypyrrole/silver composite were formed on flexible plastic substrates with an average linewidth of approximately 70 µm within 10 min. The conductivity of the composite was improved to 6.0 × 102 Ω-1·cm-1. From these results, it is expected that the conducting polymer/metal composite can be applied to the microwiring of flexible electronic devices.

  7. Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

    International Nuclear Information System (INIS)

    Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

    2000-01-01

    We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

  8. All-optical bit magnitude comparator device using metal-insulator-metal plasmonic waveguide

    Science.gov (United States)

    Kumar, Santosh; Singh, Lokendra; Chen, Nan-Kuang

    2017-12-01

    A plasmonic metal-insulator-metal (MIM) waveguide has great success in confining the surface plasmon up to a deep subwavelength scale. The structure of a nonlinear Mach-Zehnder interferometer (MZI) using a plasmonic MIM waveguide has been analyzed. A one-bit magnitude comparator has been designed using an MZI and two linear control waveguides. The device works on the Kerr effect inside the plasmonics waveguide. The mathematical description of the device is explained. The simulation of the device is done using MATLAB® and the finite-difference time-domain (FDTD) method.

  9. Nanoscale Imaging of Light-Matter Coupling Inside Metal-Coated Cavities with a Pulsed Electron Beam.

    Science.gov (United States)

    Moerland, Robert J; Weppelman, I Gerward C; Scotuzzi, Marijke; Hoogenboom, Jacob P

    2018-05-02

    Many applications in (quantum) nanophotonics rely on controlling light-matter interaction through strong, nanoscale modification of the local density of states (LDOS). All-optical techniques probing emission dynamics in active media are commonly used to measure the LDOS and benchmark experimental performance against theoretical predictions. However, metal coatings needed to obtain strong LDOS modifications in, for instance, nanocavities, are incompatible with all-optical characterization. So far, no reliable method exists to validate theoretical predictions. Here, we use subnanosecond pulses of focused electrons to penetrate the metal and excite a buried active medium at precisely defined locations inside subwavelength resonant nanocavities. We reveal the spatial layout of the spontaneous-emission decay dynamics inside the cavities with deep-subwavelength detail, directly mapping the LDOS. We show that emission enhancement converts to inhibition despite an increased number of modes, emphasizing the critical role of optimal emitter location. Our approach yields fundamental insight in dynamics at deep-subwavelength scales for a wide range of nano-optical systems.

  10. Toxic effect of zinc nanoscale metal-organic frameworks on rat pheochromocytoma (PC12) cells in vitro

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Fei, E-mail: paper_mail@126.com [Department of Pharmacy, Nanfang Hospital, Southern Medical University, Guangzhou 510515 (China); Yang, Baochun; Cai, Jing [Department of Pharmacy, Nanfang Hospital, Southern Medical University, Guangzhou 510515 (China); Jiang, Yaodong [Department of Urology, Nanfang Hospital, Southern Medical University, Guangzhou 510515 (China); Xu, Jun [Department of Health Economy Administration, Nanfang Hospital, Southern Medical University, Guangzhou 510515 (China); Wang, Shan [Department of Pharmacy, Winthrop University Hospital, Mineola, NY 11501 (United States)

    2014-04-01

    Highlights: • Metal-organic frameworks (MOFs) represent a newborn family of hybrid materials. • MOFs have already shown promise in a number of biological applications. • The biological applications of MOFs raise concerns for potential cytotoxicity. • Substantial information about MOF's neurotoxicity is still quite scarce. • This study reveals for the first time the interaction of MOFs with neural cells. - Abstract: Metal-organic frameworks (MOFs) possess unique properties desirable for delivery of drugs and gaseous therapeutics, but their uncharacterized interactions with cells raise increasing concerns of their safety in such biomedical applications. We evaluated the adverse effects of zinc nanoscale MOFs on the cell morphology, cytoskeleton, cell viability and expression of neurotrophin signaling pathway-associated GAP-43 protein in rat pheochromocytoma PC12 cells. At the concentration of 25 μg/ml, zinc MOFs did not significantly affect morphology, viability and membrane integrity of the cells. But at higher concentrations (over 100 μg/ml), MOFs exhibited a time- and concentration-dependent cytotoxicity, indicating their entry into the cells via endocytosis where they release Zn{sup 2+} into the cytosol to cause increased intracellular concentration of Zn{sup 2+}. We demonstrated that the toxicity of MOFs was associated with a disrupted cellular zinc homeostasis and down-regulation of GAP-43 protein, which might be the underlying mechanism for the improved differentiation in PC12 cells. These findings highlight the importance of cytotoxic evaluation of the MOFs before their biomedical application.

  11. Toxic effect of zinc nanoscale metal-organic frameworks on rat pheochromocytoma (PC12) cells in vitro

    International Nuclear Information System (INIS)

    Ren, Fei; Yang, Baochun; Cai, Jing; Jiang, Yaodong; Xu, Jun; Wang, Shan

    2014-01-01

    Highlights: • Metal-organic frameworks (MOFs) represent a newborn family of hybrid materials. • MOFs have already shown promise in a number of biological applications. • The biological applications of MOFs raise concerns for potential cytotoxicity. • Substantial information about MOF's neurotoxicity is still quite scarce. • This study reveals for the first time the interaction of MOFs with neural cells. - Abstract: Metal-organic frameworks (MOFs) possess unique properties desirable for delivery of drugs and gaseous therapeutics, but their uncharacterized interactions with cells raise increasing concerns of their safety in such biomedical applications. We evaluated the adverse effects of zinc nanoscale MOFs on the cell morphology, cytoskeleton, cell viability and expression of neurotrophin signaling pathway-associated GAP-43 protein in rat pheochromocytoma PC12 cells. At the concentration of 25 μg/ml, zinc MOFs did not significantly affect morphology, viability and membrane integrity of the cells. But at higher concentrations (over 100 μg/ml), MOFs exhibited a time- and concentration-dependent cytotoxicity, indicating their entry into the cells via endocytosis where they release Zn 2+ into the cytosol to cause increased intracellular concentration of Zn 2+ . We demonstrated that the toxicity of MOFs was associated with a disrupted cellular zinc homeostasis and down-regulation of GAP-43 protein, which might be the underlying mechanism for the improved differentiation in PC12 cells. These findings highlight the importance of cytotoxic evaluation of the MOFs before their biomedical application

  12. In situ electron microscopy studies of electromechanical behavior in metals at the nanoscale using a novel microdevice-based system

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Wonmo, E-mail: wonmo.kang.ctr.ks@nrl.navy.mil; Beniam, Iyoel; Qidwai, Siddiq M. [Naval Research Laboratory, Washington, DC 20375 (United States)

    2016-09-15

    Electrically assisted deformation (EAD) is an emerging technique to enhance formability of metals by applying an electric current through them. Despite its increasing importance in manufacturing applications, there is still an unresolved debate on the nature of the fundamental deformation mechanisms underlying EAD, mainly between electroplasticity (non-thermal effects) and resistive heating (thermal effects). This status is due to two critical challenges: (1) a lack of experimental techniques to directly observe fundamental mechanisms of material deformation during EAD, and (2) intrinsic coupling between electric current and Joule heating giving rise to unwanted thermally activated mechanisms. To overcome these challenges, we have developed a microdevice-based electromechanical testing system (MEMTS) to characterize nanoscale metal specimens in transmission electron microscopy (TEM). Our studies reveal that MEMTS eliminates the effect of Joule heating on material deformation, a critical advantage over macroscopic experiments, owing to its unique scale. For example, a negligible change in temperature (<0.02 °C) is predicted at ∼3500 A/mm{sup 2}. Utilizing the attractive features of MEMTS, we have directly investigated potential electron-dislocation interactions in single crystal copper (SCC) specimens that are simultaneously subjected to uniaxial loading and electric current density up to 5000 A/mm{sup 2}. Our in situ TEM studies indicate that for SCC, electroplasticity does not play a key role as no differences in dislocation activities, such as depinning and movement, are observed.

  13. Investigation of over-moulded hybrid metal/polymer devices

    DEFF Research Database (Denmark)

    Tosello, Guido; Hansen, Hans Nørgaard; Tang, Peter Torben

    2006-01-01

    principles, in-process manufacturing technologies, as well as testing methodologies have to be established in order to be able to develop such integrated devices. In this paper an investigation of the bonding between miniaturized metal insert and a polymer matrix is presented. A special demonstrator...... was designed and manufactured by over-moulding and hot-embossing. The bonding strength between the insert and the plastic part was tested by means of a tensile test. A variety of parameters was studied in order to investigate their influence on the bonding: different polymeric and metallic materials, insert...

  14. Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

    Directory of Open Access Journals (Sweden)

    N. M. Miskovsky

    2012-01-01

    Full Text Available We present a new and viable method for optical rectification. This approach has been demonstrated both theoretically and experimentally and is the basis fot the development of devices to rectify radiation through the visible. This technique for rectification is based not on conventional material or temperature asymmetry as used in MIM (metal/insulator/metal or Schottky diodes, but on a purely sharp geometric property of the antenna. This sharp “tip” or edge with a collector anode constitutes a tunnel junction. In these devices the rectenna (consisting of the antenna and the tunnel junction acts as the absorber of the incident radiation and the rectifier. Using current nanofabrication techniques and the selective atomic layer deposition (ALD process, junctions of 1 nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum. To assess the viability of our approach, we review the development of nanoantenna structures and tunnel junctions capable of operating in the visible region. In addition, we review the detailed process of rectification and present methodologies for analysis of diode data. Finally, we present operational designs for an optical rectenna and its fabrication and discuss outstanding problems and future work.

  15. Using mathematical models to understand the effect of nanoscale roughness on protein adsorption for improving medical devices

    Directory of Open Access Journals (Sweden)

    Ercan B

    2013-09-01

    Full Text Available Batur Ercan,1 Dongwoo Khang,2 Joseph Carpenter,3 Thomas J Webster1 1Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 2School of Materials Science and Engineering and Center for PRC and RIGET, Gyeongsang National University, Jinju, South Korea; 3School of Medicine, Stanford University, Stanford, CA, USA Abstract: Surface roughness and energy significantly influence protein adsorption on to biomaterials, which, in turn, controls select cellular adhesion to determine the success and longevity of an implant. To understand these relationships at a fundamental level, a model was originally proposed by Khang et al to correlate nanoscale surface properties (specifically, nanoscale roughness and energy to protein adsorption, which explained the greater cellular responses on nanostructured surfaces commonly reported in the literature today. To test this model for different surfaces from what was previously used to develop that model, in this study we synthesized highly ordered poly(lactic-co-glycolic acid surfaces of identical chemistry but altered nanoscale surface roughness and energy using poly(dimethylsiloxane molds of polystyrene beads. Fibronectin and collagen type IV adsorption studies showed a linear adsorption behavior as the surface nanoroughness increased. This supported the general trends observed by Khang et al. However, when fitting such data to the mathematical model established by Khang et al, a strong correlation did not result. Thus, this study demonstrated that the equation proposed by Khang et al to predict protein adsorption should be modified to accommodate for additional nanoscale surface property contributions (ie, surface charge to make the model more accurate. In summary, results from this study provided an important step in developing future mathematical models that can correlate surface properties (such as nanoscale roughness and surface energy to initial protein adsorption events important to

  16. Spintronic materials and devices based on antiferromagnetic metals

    OpenAIRE

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring i...

  17. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    Science.gov (United States)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  18. Temperature-dependent liquid metal flowrate control device

    International Nuclear Information System (INIS)

    Carlson, R.D.

    1978-01-01

    A temperature-dependent liquid metal flowrate control device includes a magnet and a ferromagnetic member defining therebetween a flow path for liquid metal, the ferromagnetic member being formed of a material having a curie temperature at which a change in the flow rate of the liquid metal is desired. According to the preferred embodiment the magnet is a cylindrical rod magnet axially disposed within a cylindrical member formed of a curie material and having iron pole pieces at the ends. A cylindrical iron shunt and a thin wall stainless steel barrier are disposed in the annulus between magnet and curie material. Below the curie temperature flow between steel barrier and curie material is impeded and above the curie temperature flow impedance is reduced

  19. High Terahertz Absorbing Nanoscale Metal Films for Fabrication of Micromechanical Bi-material THz Sensors

    Science.gov (United States)

    2010-06-01

    to be 6.75 x 105 [S/m] and 7.2 x 105 [S/m] for 15 nm and 30 nm layers, respectively. These values are consistent with the measurements by Laman et...edition (expanded),” Cambridge University, 1999. [11] N. Laman , and D. Grischkowsky, “Terahertz Conductivity of Thin Metal Films,” Applied Physics

  20. Atomic Resolution Imaging of Nanoscale Structural Ordering in a Complex Metal Oxide Catalyst

    KAUST Repository

    Zhu, Yihan

    2012-08-28

    The determination of the atomic structure of a functional material is crucial to understanding its "structure-to-property" relationship (e.g., the active sites in a catalyst), which is however challenging if the structure possesses complex inhomogeneities. Here, we report an atomic structure study of an important MoVTeO complex metal oxide catalyst that is potentially useful for the industrially relevant propane-based BP/SOHIO process. We combined aberration-corrected scanning transmission electron microscopy with synchrotron powder X-ray crystallography to explore the structure at both nanoscopic and macroscopic scales. At the nanoscopic scale, this material exhibits structural and compositional order within nanosized "domains", while the domains show disordered distribution at the macroscopic scale. We proposed that the intradomain compositional ordering and the interdomain electric dipolar interaction synergistically induce the displacement of Te atoms in the Mo-V-O channels, which determines the geometry of the multifunctional metal oxo-active sites.

  1. Modeling nanoscale gas sensors under realistic conditions: Computational screening of metal-doped carbon nanotubes

    DEFF Research Database (Denmark)

    García Lastra, Juan Maria; Mowbray, Duncan; Thygesen, Kristian Sommer

    2010-01-01

    We use computational screening to systematically investigate the use of transition-metal-doped carbon nanotubes for chemical-gas sensing. For a set of relevant target molecules (CO, NH3, and H2S) and the main components of air (N2, O2, and H2O), we calculate the binding energy and change in condu......We use computational screening to systematically investigate the use of transition-metal-doped carbon nanotubes for chemical-gas sensing. For a set of relevant target molecules (CO, NH3, and H2S) and the main components of air (N2, O2, and H2O), we calculate the binding energy and change...... the change in the nanotube resistance per doping site as a function of the target molecule concentration assuming charge transport in the diffusive regime. Our analysis points to Ni-doped nanotubes as candidates for CO sensors working under typical atmospheric conditions....

  2. Nanoscale Electrochemical Sensing and Processing in Microreactors

    NARCIS (Netherlands)

    Odijk, Mathieu; van den Berg, Albert

    2018-01-01

    In this review, we summarize recent advances in nanoscale electrochemistry, including the use of nanoparticles, carbon nanomaterials, and nanowires. Exciting developments are reported for nanoscale redox cycling devices, which can chemically amplify signal readout. We also discuss promising

  3. A nanoscale Zr-based fluorescent metal-organic framework for selective and sensitive detection of hydrogen sulfide

    Science.gov (United States)

    Li, Yanping; Zhang, Xin; Zhang, Ling; Jiang, Ke; Cui, Yuanjing; Yang, Yu; Qian, Guodong

    2017-11-01

    Hydrogen sulfide (H2S) has been commonly viewed as a gas signaling molecule in various physiological and pathological processes. However, the highly efficient H2S detection still remains challenging. Herein, we designed a new robust nano metal-organic framework (MOF) UiO-66-CH=CH2 as a fluorescent probe for rapid, sensitive and selective detection of biological H2S. UiO-66-CH=CH2 was prepared by heating ZrCl4 and 2-vinylterephthalic acid via a simple method. UiO-66-CH=CH2 displayed fluorescence quenching to H2S and kept excellent selectivity in the presence of biological relevant analytes especially the cysteine and glutathione. This MOF-based probe also exhibited fast response (10 s) and high sensitivity with a detection limit of 6.46 μM which was within the concentration range of biological H2S in living system. Moreover, this constructed MOF featured water-stability, nanoscale (20-30 nm) and low toxicity, which made it a promising candidate for biological H2S sensing.

  4. Self-Templated Stepwise Synthesis of Monodispersed Nanoscale Metalated Covalent Organic Polymers for In Vivo Bioimaging and Photothermal Therapy.

    Science.gov (United States)

    Shi, Yanshu; Deng, Xiaoran; Bao, Shouxin; Liu, Bei; Liu, Bin; Ma, Ping'an; Cheng, Ziyong; Pang, Maolin; Lin, Jun

    2017-09-05

    Size- and shape-controlled growth of nanoscale microporous organic polymers (MOPs) is a big challenge scientists are confronted with; meanwhile, rendering these materials for in vivo biomedical applications is still scarce. In this study, a monodispersed nanometalated covalent organic polymer (MCOP, M=Fe, Gd) with sizes around 120 nm was prepared by a self-templated two-step solution-phase synthesis method. The metal ions (Fe 3+ , Gd 3+ ) played important roles in generating a small particle size and in the functionalization of the products during the reaction with p-phenylenediamine (Pa). The resultant Fe-Pa complex was used as a template for the subsequent formation of MCOP following the Schiff base reaction with 1,3,5-triformylphloroglucinol (Tp). A high tumor suppression efficiency for this Pa-based COP is reported for the first time. This study demonstrates the potential use of MCOP as a photothermal agent for photothermal therapy (PTT) and also provides an alternative route to fabricate nano-sized MCOPs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Humic acid and metal ions accelerating the dechlorination of 4-chlorobiphenyl by nanoscale zero-valent iron

    Institute of Scientific and Technical Information of China (English)

    Yu Wang; Dongmei Zhou; Yujun Wang; Xiangdong Zhu; Shengyang Jin

    2011-01-01

    Transformation of polychlorinated biphenyls (PCBs) by zero-valent iron represents one of the latest innovative technologies for environmental remediation.The dechlorination of 4-chlorobiphenyl (4-C1BP) by nanoscale zero-valent iron (NZVI) in the presence of humic acid or metal ions was investigated.The results showed that the de chlorination of 4-CIBP by NZVI increased with decreased solution pH.When the initial pH value was 4.0,5.5,6.8,and 9.0,the de chlorination efliciencies of 4-C1BP after 48 hr were 53.8%,47.8%,35.7%,and 35.6%,respectively.The presence of humic acid inhibited the reduction of 4-ClBP in the first 4 hr,and then significantly accelerated the dechlorination by reaching 86.3% in 48 hr.Divalent metal ions,Co2+,Cu2+,and Ni2+,were reduced and formed bimetals with NZVI,thereby enhanced the dechlorination of 4-CIBP.The dechlorination percentages of 4-CIBP in the presence of 0.1 mmol/L Co2+,Cu2+ and Ni2+ were 66.1%,66.0% and 64.6% in 48 hr,and then increased to 67.9%,71.3% and 73.5%,after 96 hr respectively.The dechlorination kinetics of 4-CIBP by the NZVI in all cases followed pseudo-first order model.The results provide a basis for better understanding of the dechlorination mechanisms of PCBs in real environment.

  6. Internal Morphologies of Cycled Li-Metal Electrodes Investigated by Nano-Scale Resolution X-ray Computed Tomography.

    Science.gov (United States)

    Frisco, Sarah; Liu, Danny X; Kumar, Arjun; Whitacre, Jay F; Love, Corey T; Swider-Lyons, Karen E; Litster, Shawn

    2017-06-07

    While some commercially available primary batteries have lithium metal anodes, there has yet to be a commercially viable secondary battery with this type of electrode. Research prototypes of these cells typically exhibit a limited cycle life before dendrites form and cause internal cell shorting, an occurrence that is more pronounced during high-rate cycling. To better understand the effects of high-rate cycling that can lead to cell failure, we use ex situ nanoscale-resolution X-ray computed tomography (nano-CT) with the aid of Zernike phase contrast to image the internal morphologies of lithium metal electrodes on copper wire current collectors that have been cycled at low and high current densities. The Li that is deposited on a Cu wire and then stripped and deposited at low current density appears uniform in morphology. Those cycled at high current density undergo short voltage transients to >3 V during Li-stripping from the electrode, during which electrolyte oxidation and Cu dissolution from the current collector may occur. The effect of temperature is also explored with separate cycling experiments performed at 5 and 33 °C. The resulting morphologies are nonuniform films filled with voids that are semispherical in shape with diameters ranging from hundreds of nanometers to tens of micrometers, where the void size distributions are temperature-dependent. Low-temperature cycling elicits a high proportion of submicrometer voids, while the higher-temperature sample morphology is dominated by voids larger than 2 μm. In evaluating these morphologies, we consider the importance of nonidealities during extreme charging, such as electrolyte decomposition. We conclude that nano-CT is an effective tool for resolving features and aggressive cycling-induced anomalies in Li films in the range of 100 nm to 100 μm.

  7. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Science.gov (United States)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  8. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Energy Technology Data Exchange (ETDEWEB)

    Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

    2014-12-30

    Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

  9. Modeling heat dissipation at the nanoscale: an embedding approach for chemical reaction dynamics on metal surfaces.

    Science.gov (United States)

    Meyer, Jörg; Reuter, Karsten

    2014-04-25

    We present an embedding technique for metallic systems that makes it possible to model energy dissipation into substrate phonons during surface chemical reactions from first principles. The separation of chemical and elastic contributions to the interaction potential provides a quantitative description of both electronic and phononic band structure. Application to the dissociation of O2 at Pd(100) predicts translationally "hot" oxygen adsorbates as a consequence of the released adsorption energy (ca. 2.6 eV). This finding questions the instant thermalization of reaction enthalpies generally assumed in models of heterogeneous catalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

    Science.gov (United States)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

  11. Nanoscale zinc-based metal-organic framework with high capacity for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Changdong [Changzhou University, School of Petrochemical Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, and Advanced Catalysis and Green Manufacturing Collaborative Innovation Center (China); Gao, Yuanrui; Liu, Lili [Shanghai University, Department of Chemistry, College of Science (China); Song, Yidan; Wang, Xianmei [Changzhou University, School of Petrochemical Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, and Advanced Catalysis and Green Manufacturing Collaborative Innovation Center (China); Liu, Hong-Jiang, E-mail: liuhj@shu.edu.cn [Shanghai University, Department of Chemistry, College of Science (China); Liu, Qi, E-mail: liuqi62@163.com [Changzhou University, School of Petrochemical Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, and Advanced Catalysis and Green Manufacturing Collaborative Innovation Center (China)

    2016-12-15

    Layered zinc-based metal-organic framework ([Zn(4,4′-bpy)(tfbdc)(H{sub 2}O){sub 2}], Zn-LMOF) nanosheets were synthesized by a facile hydrothermal method (4,4′-bpy = 4,4′-bipyridine, H{sub 2}tfbdc = tetrafluoroterephthalic acid). The materials were characterized by IR spectrum, elemental analysis, thermogravimetric analysis, powder X-ray diffraction, transmission electron microscope (TEM), scanning electron microscope (SEM), and the Brunauer–Emmett–Teller (BET) surface. When the Zn-LMOF nanosheets with the thickness of about 24 ± 8 nm were used as an anode material of lithium-ion batteries, not only the Zn-LMOF electrode shows a high reversible capacity, retaining 623 mAh g{sup −1} after 100 cycles at a current density of 50 mA g{sup −1} but also exhibits an excellent cyclic stability and a higher rate performance.

  12. Second harmonic generation in nanoscale films of transition metal dichalcogenide: Accounting for multipath interference

    Directory of Open Access Journals (Sweden)

    A. V. Kudryavtsev

    2016-09-01

    Full Text Available The transfer matrix method has been widely used to calculate wave propagation through the layered structures consisting entirely of either linear or nonlinear optical materials. In the present work, we develop the transfer matrix method for structures consisting of alternating layers of linear and nonlinear optical materials. The result is presented in a form that allows one to directly substitute the values of material constants, refractive index and absorption coefficient, into the expressions describing the second harmonic generation (SHG field. The model is applied to the calculation of second harmonic (SH field generated in nano-thin layers of transition metal dichalcogenides exfoliated on top of silicon oxide/silicon Fabry-Perot cavity. These structures are intensively studied both in view of their unique properties and perspective applications. A good agreement between experimental and numerical results can be achieved by small modification of optical constants, which may arise in an experiment due to a strong electric field of an incident focused pump laser beam. By considering the SHG effect, this paper completes the series of works describing the role of Fabry-Perot cavity in different optical effects (optical reflection, photoluminescence and Raman scattering in 2D semiconductors that is extremely important for characterization of these unique materials.

  13. NANOSCALE STRUCTURES GENERATION WITHIN THE SURFACE LAYER OF METALS WITH SHORT UV LASER PULSES

    Directory of Open Access Journals (Sweden)

    Dmitry S. Ivanov

    2017-01-01

    Full Text Available We have completed modeling of a laser pulse influence on a gold target. We have applied a hybrid atomistic-continuum model to analyze the physical mechanisms responsible for the process of nanostructuring. The model combines the advantages of Molecular Dynamics and Two Temperature Model. We have carried out a direct comparison of the modeling results and experimental data on nano-modification due to a single ps laser pulse at the energy densities significantly exceeding the melting threshold. The experimental data is obtained due to a laser pulse irradiation at the wavelength of 248 nm and duration of 1.6 ps. The mask projection (diffraction grating creates the sinusoidal intensity distribution on a gold surface with periods of 270 nm, 350 nm, and 500 nm. The experimental data and modeling results have demonstrated a good match subject to complex interrelations between a fast material response to the laser excitation, generation of crystal defects, phase transitions and hydrodynamic motion of matter under condition of strong laser-induced non-equilibrium. The performed work confirms the proposed approach as a powerful tool for revealing the physical mechanisms underlying the process of nanostructuring of metal surfaces. Detailed understanding of the dynamics of these processes gives the possibility for designing the topology of functional surfaces on nano- and micro-scales.

  14. Nanoscale Chemical and Valence Evolution at the Metal/Oxide Interface: A Case Study of Ti/SrTiO 3

    KAUST Repository

    Li, Yangyang

    2016-06-27

    Metal/oxide interfaces are ubiquitous in a wide range of applications such as electronics, photovoltaics, memories, catalysis, and sensors. However, there have been few investigations dedicated to the nanoscale structural and chemical characteristics of these buried interfaces. In this work, the metal/oxide interface between Ti and SrTiO3 (STO) is examined as a prototypical system using high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. An atomic-thin Ti2O3-like layer at the Ti/STO interface prepared at room temperature is discovered, and first-principles calculations predict a metallic band structure of this 2D electron system. As a universal feature of such interfaces prepared at different temperatures, near the interface nanoscale oxygen-deficient domains and continuous modulation of Ti oxidation states are found. Overall, these results directly reveal complex chemical and valence evolutions at the metal/oxide interfaces, providing microscopic insights on such heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  15. Conductive transition metal oxide nanostructured electrochromic material and optical switching devices constructed thereof

    Science.gov (United States)

    Mattox, Tracy M.; Koo, Bonil; Garcia, Guillermo; Milliron, Delia J.; Trizio, Luca De; Dahlman, Clayton

    2017-10-10

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant, a solid state electrolyte, and a counter electrode. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) spectrum and visible spectrum radiation as a function of an applied voltage to the device.

  16. Physical removal of metallic carbon nanotubes from nanotube network devices using a thermal and fluidic process

    International Nuclear Information System (INIS)

    Ford, Alexandra C; Shaughnessy, Michael; Wong, Bryan M; Kane, Alexander A; Krafcik, Karen L; Léonard, François; Kuznetsov, Oleksandr V; Billups, W Edward; Hauge, Robert H

    2013-01-01

    Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subsequent dissolution and selective removal of the metallic nanotubes in chloroform. The approach is versatile and is applied to devices post-fabrication. (paper)

  17. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.; Fan, Shanhui

    2010-01-01

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

  18. Nanoscale Organic Hybrid Electrolytes

    KAUST Repository

    Nugent, Jennifer L.

    2010-08-20

    Nanoscale organic hybrid electrolytes are composed of organic-inorganic hybrid nanostructures, each with a metal oxide or metallic nanoparticle core densely grafted with an ion-conducting polyethylene glycol corona - doped with lithium salt. These materials form novel solvent-free hybrid electrolytes that are particle-rich, soft glasses at room temperature; yet manifest high ionic conductivity and good electrochemical stability above 5V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Nanoscale Organic Hybrid Electrolytes

    KAUST Repository

    Nugent, Jennifer L.; Moganty, Surya S.; Archer, Lynden A.

    2010-01-01

    Nanoscale organic hybrid electrolytes are composed of organic-inorganic hybrid nanostructures, each with a metal oxide or metallic nanoparticle core densely grafted with an ion-conducting polyethylene glycol corona - doped with lithium salt. These materials form novel solvent-free hybrid electrolytes that are particle-rich, soft glasses at room temperature; yet manifest high ionic conductivity and good electrochemical stability above 5V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. The effect of high-temperature treatment on the formation of nanoscale intermetallic compounds of transition metals in Al-Cu-Mn-Zr alloy

    Science.gov (United States)

    Monastyrska, Tetiana O.; Berezina, Alla L.; Labur, Tetiana M.; Molebny, Oleh A.; Kotko, Andrii V.

    2018-02-01

    The precipitation of intermetallic compounds of transition metals during aging of the Al-5.8%Cu-0.3%Mn-0.1%Zr alloy has been studied using DSC, resistometry, X-ray and transmission electron microscopy. In these age hardenable alloys, the nanoscale metastable Θ″ and Θ' phases of the Al2Cu compound are the main strengthening phases, which are formed at low temperature aging of T stresses, etc.) on the aging with the precipitation of strengthening phases has been investigated.

  1. Spintronic materials and devices based on antiferromagnetic metals

    Directory of Open Access Journals (Sweden)

    Y.Y. Wang

    2017-04-01

    Full Text Available In this paper, we review our recent experimental developments on antiferromagnet (AFM spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.

  2. Highly repeatable nanoscale phase coexistence in vanadium dioxide films

    Science.gov (United States)

    Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

    2018-02-01

    It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

  3. Improved Understanding of Space Radiation Effects on Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Future NASA space exploration missions will use nanometer-scale electronic technologies which call for a shift in how radiation effects in such devices and materials...

  4. Development of sensitive holographic devices for physiological metal ion detection

    Science.gov (United States)

    Sabad-e.-Gul; Martin, Suzanne; Cassidy, John; Naydenova, Izabela

    2017-08-01

    The development of selective alkali metal ions sensors in particular is a subject of significant interest. In this respect, the level of blood electrolytes, particularly H+, Na+, K+ and Cl- , is widely used to monitor aberrant physiologies associated with pulmonary emphysema, acute and chronic renal failure, heart failure, diabetes. The sensors reported in this paper are created by holographic recording of surface relief structures in a self-processing photopolymer material. The structures are functionalized by ionophores dibenzo-18-crown-6 (DC) and tetraethyl 4-tert-butylcalix[4]arene (TBC) in plasticised polyvinyl chloride (PVC) matrix. Interrogation of these structures by light allows indirect measurements of chemical analytes' concentration in real time. We present results on the optimisation and testing of the holographic sensor. A self-processing acrylamide-based photopolymer was used to fabricate the required photonic structures. The performance of the sensors for detection of K+ and Na+ was investigated. It was observed that the functionalisation with DC provides a selective response of the devices to K+ over Na+ and TBC coated surface structures are selectively sensitive to Na+. The sensor responds to Na+ within the physiological ranges. Normal levels of Na+ and K+ in human serum lie within the ranges 135-148mM and 3.5-5.3 mM respectively.

  5. Nanoscale decomposition of Nb-Ru-O

    Science.gov (United States)

    Music, Denis; Geyer, Richard W.; Chen, Yen-Ting

    2016-11-01

    A correlative theoretical and experimental methodology has been employed to explore the decomposition of amorphous Nb-Ru-O at elevated temperatures. Density functional theory based molecular dynamics simulations reveal that amorphous Nb-Ru-O is structurally modified within 10 ps at 800 K giving rise to an increase in the planar metal - oxygen and metal - metal population and hence formation of large clusters, which signifies atomic segregation. The driving force for this atomic segregation process is 0.5 eV/atom. This is validated by diffraction experiments and transmission electron microscopy of sputter-synthesized Nb-Ru-O thin films. Room temperature samples are amorphous, while at 800 K nanoscale rutile RuO2 grains, self-organized in an amorphous Nb-O matrix, are observed, which is consistent with our theoretical predictions. This amorphous/crystalline interplay may be of importance for next generation of thermoelectric devices.

  6. Laser Direct Writing and Selective Metallization of Metallic Circuits for Integrated Wireless Devices.

    Science.gov (United States)

    Cai, Jinguang; Lv, Chao; Watanabe, Akira

    2018-01-10

    Portable and wearable devices have attracted wide research attention due to their intimate relations with human daily life. As basic structures in the devices, the preparation of high-conductive metallic circuits or micro-circuits on flexible substrates should be facile, cost-effective, and easily integrated with other electronic units. In this work, high-conductive carbon/Ni composite structures were prepared by using a facile laser direct writing method, followed by an electroless Ni plating process, which exhibit a 3-order lower sheet resistance of less than 0.1 ohm/sq compared to original structures before plating, showing the potential for practical use. The carbon/Ni composite structures exhibited a certain flexibility and excellent anti-scratch property due to the tight deposition of Ni layers on carbon surfaces. On the basis of this approach, a wireless charging and storage device on a polyimide film was demonstrated by integrating an outer rectangle carbon/Ni composite coil for harvesting electromagnetic waves and an inner carbon micro-supercapacitor for energy storage, which can be fast charged wirelessly by a commercial wireless charger. Furthermore, a near-field communication (NFC) tag was prepared by combining a carbon/Ni composite coil for harvesting signals and a commercial IC chip for data storage, which can be used as an NFC tag for practical application.

  7. Metal-Organic Frameworks as Active Materials in Electronic Sensor Devices.

    Science.gov (United States)

    Campbell, Michael G; Dincă, Mircea

    2017-05-12

    In the past decade, advances in electrically conductive metal-organic frameworks (MOFs) and MOF-based electronic devices have created new opportunities for the development of next-generation sensors. Here we review this rapidly-growing field, with a focus on the different types of device configurations that have allowed for the use of MOFs as active components of electronic sensor devices.

  8. New approaches for first-principles modelling of inelastic transport in nanoscale semiconductor devices with thousands of atoms

    DEFF Research Database (Denmark)

    Gunst, Tue; Brandbyge, Mads; Palsgaard, Mattias Lau Nøhr

    2017-01-01

    is in both methods calculated in a post-processing step to a self consistent DFT calculation. The first method is based on first order perturbation theory in the EPC self-energy within the Lowest Order Expansion (LOE) approximation. The method requires calculation of the first-principles EPC in the device......We present two different methods which both enable large-scale first-principles device simulations including electron-phonon coupling (EPC). The methods are based on Density Functional Theory and Nonequilibrium Greens Functions (DFT- NEGF) calculations of electron transport. The inelastic current...

  9. A method to design high SNR nanoscale magnetic sensors using an array of tunnelling magneto-resistance (TMR) devices

    International Nuclear Information System (INIS)

    Gomez, P; Litvinov, D; Khizroev, S

    2007-01-01

    This paper presents a systematic method to design and calculate tunnelling magneto-resistance (TMR) sensors with high signal-to-noise ratio (SNR). The sensing module consists of four TMR devices arranged in a Wheatstone-bridge configuration. Closed-form equations were obtained to calculate TMR sensor current, array output voltage, magneto-resistance ratio, overall noise (thermal and shot) and SNR for a given bandwidth. Using this technique we were able to maximize the SNR by tuning the many parameters of the TMR devices. Typical SNR values are in excess of 45 dB

  10. Steam generation device with heat exchange between a liquid metal coolant and the feedwater

    International Nuclear Information System (INIS)

    Malaval, C.

    1983-01-01

    The invention is particularly applicable to a liquid metal fast breeder reactor plant, the liquid metal being sodium. The steam generation device is described in detail, it allows to get an upper liquid metal level without turbulence and an easier passage for the shock wave towards the steam generator up to the liquid metal level without being laterally reflected back to the intermediate heat exchangers [fr

  11. Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

    Science.gov (United States)

    Chatterjee, Rohit

    In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

  12. Nanoscale technology in biological systems

    CERN Document Server

    Greco, Ralph S; Smith, R Lane

    2004-01-01

    Reviewing recent accomplishments in the field of nanobiology Nanoscale Technology in Biological Systems introduces the application of nanoscale matrices to human biology. It focuses on the applications of nanotechnology fabrication to biomedical devices and discusses new physical methods for cell isolation and manipulation and intracellular communication at the molecular level. It also explores the application of nanobiology to cardiovascular diseases, oncology, transplantation, and a range of related disciplines. This book build a strong background in nanotechnology and nanobiology ideal for

  13. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  14. The impact of common metal allergens in daily devices

    DEFF Research Database (Denmark)

    Hamann, Dathan; Hamann, Carsten R; Thyssen, Jacob P

    2013-01-01

    We are widely exposed to metal allergens in our daily doings. As exposures constantly changes because of fashion trends and technological developments, there is a need for a continuous update of patch testers. An overview of consumer metal exposure studies that have been published in 2012 and 2013...

  15. The impact of common metal allergens in daily devices.

    Science.gov (United States)

    Hamann, Dathan; Hamann, Carsten R; Thyssen, Jacob P

    2013-10-01

    We are widely exposed to metal allergens in our daily doings. As exposures constantly changes because of fashion trends and technological developments, there is a need for a continuous update of patch testers. An overview of consumer metal exposure studies that have been published in 2012 and 2013 is provided as well as lists of common metal exposures. Nickel release in concentrations that cause nickel allergy and contact dermatitis is seen from laptop computers. Cobalt is found in leather as a dye and may cause chronic dermatitis. Chromium is used as a dye and for tanning in leather items and is found in nearly all shoes and released from a high proportion. New consumer items should continuously be considered and investigated for metal release when patients with positive patch test results to metal allergens are evaluated.

  16. Single channel double-duct liquid metal electrical generator using a magnetohydrodynamic device

    Science.gov (United States)

    Haaland, Carsten M.; Deeds, W. Edward

    1999-01-01

    A single channel double-duct liquid metal electrical generator using a magnetohydrodynamic (MHD) device. The single channel device provides useful output AC electric energy. The generator includes a two-cylinder linear-piston engine which drives liquid metal in a single channel looped around one side of the MHD device to form a double-duct contra-flowing liquid metal MHD generator. A flow conduit network and drive mechanism are provided for moving liquid metal with an oscillating flow through a static magnetic field to produce useful AC electric energy at practical voltages and currents. Variable stroke is obtained by controlling the quantity of liquid metal in the channel. High efficiency is obtained over a wide range of frequency and power output.

  17. "Periodic-table-style" paper device for monitoring heavy metals in water.

    Science.gov (United States)

    Li, Miaosi; Cao, Rong; Nilghaz, Azadeh; Guan, Liyun; Zhang, Xiwang; Shen, Wei

    2015-03-03

    If a paper-based analytical device (μ-PAD) could be made by printing indicators for detection of heavy metals in chemical symbols of the metals in a style of the periodic table of elements, it could be possible for such μ-PAD to report the presence and the safety level of heavy metal ions in water simultaneously and by text message. This device would be able to provide easy solutions to field-based monitoring of heavy metals in industrial wastewater discharges and in irrigating and drinking water. Text-reporting could promptly inform even nonprofessional users of the water quality. This work presents a proof of concept study of this idea. Cu(II), Ni(II), and Cr(VI) were chosen to demonstrate the feasibility, specificity, and reliability of paper-based text-reporting devices for monitoring heavy metals in water.

  18. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, William F.

    1987-01-01

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  19. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  20. Device for removing alkali metal residues from heat exchanger

    International Nuclear Information System (INIS)

    Matal, O.

    1987-01-01

    The main parts of the facility consists of a condensing vessel and a vacuum pump unit interconnected via a vacuum pipe. The heat exchanger is heated to a temperature at which the alkali metal residues evaporate. Metal vapors are collected in the condensing vessel where they condense. The removal of the alkali metal residues from the heat exchanger pipes allows thorough inspection of the pipe inside during scheduled nuclear power plant shutdowns. The facility can be used especially with reverse steam generators. (E.S.). 1 fig

  1. Nanoelectronic device applications handbook

    CERN Document Server

    Morris, James E

    2013-01-01

    Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal-oxide-semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world.These include: Nanoscale advance

  2. Eddy current testing device for metallic tubes at least locally curved

    International Nuclear Information System (INIS)

    Pigeon, Marcel; Vienot, Claude.

    1975-01-01

    Steam generators, condensers and heat exchangers generally consist of metallic tube bundles, the tubes having a complex geometry. The invention concerns an Eddy current testing device for metallic tubes at least locally curved, operating by translation of a probe inside the tubes [fr

  3. Synthesis, dynamics and photophysics of nanoscale systems

    Science.gov (United States)

    Mirkovic, Tihana

    The emerging field of nanotechnology, which spans diverse areas such as nanoelectronics, medicine, chemical and pharmaceutical industries, biotechnology and computation, focuses on the development of devices whose improved performance is based on the utilization of self-assembled nanoscale components exhibiting unique properties owing to their miniaturized dimensions. The first phase in the conception of such multifunctional devices based on integrated technologies requires the study of basic principles behind the functional mechanism of nanoscale components, which could originate from individual nanoobjects or result as a collective behaviour of miniaturized unit structures. The comprehensive studies presented in this thesis encompass the mechanical, dynamical and photophysical aspects of three nanoscale systems. A newly developed europium sulfide nanocrystalline material is introduced. Advances in synthetic methods allowed for shape control of surface-functionalized EuS nanocrystals and the fabrication of multifunctional EuS-CdSe hybrid particles, whose unique structural and optical properties hold promise as useful attributes of integrated materials in developing technologies. A comprehensive study based on a new class of multifunctional nanomaterials, derived from the basic unit of barcoded metal nanorods is presented. Their chemical composition affords them the ability to undergo autonomous motion in the presence of a suitable fuel. The nature of their chemically powered self-propulsion locomotion was investigated, and plausible mechanisms for various motility modes were presented. Furthermore functionalization of striped metallic nanorods has been realized through the incorporation of chemically controlled flexible hinges displaying bendable properties. The structural aspect of the light harvesting machinery of a photosynthetic cryptophyte alga, Rhodomonas CS24, and the mobility of the antenna protein, PE545, in vivo were investigated. Information obtained

  4. Nanoscale thermal transport. II. 2003-2012

    Science.gov (United States)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-03-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

  5. Nanoscale thermal transport. II. 2003–2012

    International Nuclear Information System (INIS)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-01-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and

  6. Improving light harvesting in polymer photodetector devices through nanoindented metal mask films

    NARCIS (Netherlands)

    Macedo, A. G.; Zanetti, F.; Mikowski, A.; Hummelen, J. C.; Lepienski, C. M.; da Luz, M. G. E.; Roman, L. S.

    2008-01-01

    To enhance light harvesting in organic photovoltaic devices, we propose the incorporation of a metal (aluminum) mask film in the system's usual layout. We fabricate devices in a sandwich geometry, where the mask (nanoindented with a periodic array of holes of sizes d and spacing s) is added between

  7. Device for safe disposal of non-utilizable cuttings from depleted uranium metal

    International Nuclear Information System (INIS)

    Fiala, B.

    1991-01-01

    A device was developed for the production of U 3 O 8 from cuttings of depleted uranium metal or of uranium metal waste whose surface area is sufficiently large for combustion. The waste may contain organic impurities or other metals. The purity of the U 3 O 8 thus obtained is about 98%. Tests gave evidence that the combustion facility meets all requirements set forth by hygienic and ecological regulations. (Z.M.). 1 fig

  8. Transferred metal electrode films for large-area electronic devices

    International Nuclear Information System (INIS)

    Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

    2014-01-01

    The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm −1 have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS ® (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films

  9. Device for electrochemical detection of metal sample surface resistance and passivation against corrosion in electrolyte

    International Nuclear Information System (INIS)

    Urbancik, L.; Bar, J.; Nemec, J.; Sima, A.

    1986-01-01

    The device consists of a teflon vessel with sealing and an opening below the electrolyte level. Into it is submerged an electrode connected to a dc voltage supply whose other pole is connected to a sample of the metal which is pressed to the opening in the sealing with a flexible strap. The teflon vessel and the sealing are integral. The device is simpler and less costly than those manufactured so far. The operating capability of damaged sealing may be renewed by simple mechanical working. The device may be used for detecting the resistance and passivation of steam generator metal tubes. (J.B.). 1 fig

  10. Nanoscale thermal transport

    Science.gov (United States)

    Cahill, David G.; Ford, Wayne K.; Goodson, Kenneth E.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Merlin, Roberto; Phillpot, Simon R.

    2003-01-01

    Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid-solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The

  11. Method of making metal-chalcogenide photosensitive devices

    International Nuclear Information System (INIS)

    Kazacos, M.S.; Miller, B.

    1981-01-01

    We have found that a photoactive metal selenide film, such as cdse, may be formed by cathodic eletrodeposition from a selenosulfite (Seso32-) solution without the need for a subsequent heat treating step which, it is hypothesized, was required by the simultaneous deposition of elemental selenium

  12. Direct metal transfer printing on flexible substrate for fabricating optics functional devices

    Science.gov (United States)

    Jiang, Yingjie; Zhou, Xiaohong; Zhang, Feng; Shi, Zhenwu; Chen, Linsen; Peng, Changsi

    2015-11-01

    New functional materials and devices based on metal patterns can be widely used in many new and expanding industries,such as flat panel displays, alternative energy,sensors and so on. In this paper, we introduce a new transfer printing method for fabricating metal optics functional devices. This method can directly transfer a metal pattern from a polyethylene terephthalate (PET)supported UV or polydimethylsiloxane (PDMS) pattern to another PET substrate. Purely taking advantage of the anaerobic UV curing adhesive (a-UV) on PET substrate, metal film can be easily peeled off from micro/nano-structured surface. As a result, metal film on the protrusion can be selectively transferred onto the target substrate, to make it the metal functional surface. But which on the bottom can not be transferred. This method provides low cost fabrication of metal thin film devices by avoiding high cost lithography process. Compared with conventional approach, this method can get more smooth rough edges and has wider tolerance range for the original master mold. Future developments and potential applications of this metal transfer method will be addressed.

  13. Metal-Anion Pairing at Oxide/Water Interfaces: Theoretical and Experimental Investigations from the Nanoscale to the Macroscale

    Energy Technology Data Exchange (ETDEWEB)

    Allen, Heather [The Ohio State Univ., Columbus, OH (United States)

    2016-11-14

    We combine the use of several techniques including bulk adsorption experiments, X-ray absorption, infrared, total internal reflection Raman, and vibrational sum frequencygeneration (XAS, IR, TIR-Raman, VSFG) spectroscopies, and molecular modeling to investigate ion adsorption at mineral surfaces. XAS and TIR-Raman provides data on how the metal binds to the surface (e.g., monodentate, bidentate), IR provides data on bulk anion adsorption at mineral surfaces from aqueous solutions, and VSFG provides surface specific data on anion adsorption at the mineral surface as well as impact of adsorbed metal-anion pairs on water structure at the mineral surface. Molecular modeling is used to guide spectroscopic data interpretation by providing information on water structure around ions in solution and the structure of metal-anion complexes in aqueous solutions. In addition, molecular modeling is used to provide insight into water structure at mineral surfaces, the surface sites involved in ion adsorption, and the distribution of ion pairs between aqueous solution and the mineral surface. Our studies have focused on systems involving alkaline earth metal (Mg2+, Ca2+, Sr2+, Ba2+) and heavy metal (Co2+, Cd2+) cations. The anions we have selected for studyinclude Cl-, NO3-, ClO4-, SO42-, SeO32-, and SeO42-. Ion adsorption and the potential formation ofternary complexes on silica (quartz, amorphous silica), alumina (corundum and gibbsite), and ferric iron oxides (goethite and hematite) are under investigation.

  14. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  15. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.

    2010-08-11

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

  16. Friction laws at the nanoscale.

    Science.gov (United States)

    Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

    2009-02-26

    Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

  17. Thickness profile measuring device for rolling metal bands or sheets

    International Nuclear Information System (INIS)

    Campas, J.J.; Terreaux, S.

    1995-01-01

    Previous radiometric thickness gages were affected by insufficient water proofing and limited cooling performances for the detection subsystem (in general specially designed photodiodes). This resulted in poor reliability and life expectancy, in particular when heavy humidity and constant radiative heat are present as for hot rolling in the metal industry. This new gage design brings enhanced performances for these two factors. (D.L.). 4 refs., 3 figs

  18. Metal/graphite-composite materials for fusion device

    International Nuclear Information System (INIS)

    Kneringer, G.; Kny, E.; Fischer, W.; Reheis, N.; Staffler, R.; Samm, U.; Winter, J.

    1995-01-01

    The utilization of graphite as a structural material depends to an important extent on the availability of a joining technique suitable for the production of reliable large scale metal/graphite-composites. This study has been conducted to evaluate vacuum brazes and procedures for graphite and metals which can be used in fusion applications up to about 1500 degree C. The braze materials included: AgCuTi, CuTi, NiTi, Ti, ZrTi, Zr. Brazing temperatures ranged from 850 degree C to 1900 degree C. The influence of graphite quality on wettability and pore-penetration of the braze has been investigated. Screening tests of metal/graphite-assemblies with joint areas exceeding some square-centimeters have shown that they can only successfully be produced when graphite is brazed to a metal, such as tungsten or molybdenum with a coefficient of thermal expansion closely matching that of graphite. Therefore all experimental work on evaluation of joints has been concentrated on molybdenum/graphite brazings. The tensile strength of molybdenum/graphite-composites compares favorably with the tensile strength of bulk graphite from room temperature close to the melting temperature of the braze. In electron beam testing the threshold damage line for molybdenum/graphite-composites has been evaluated. Results show that even composites with the low melting AgCuTi-braze are expected to withstand 10 MW/m 2 power density for at least 10 3 cycles. Limiter testing in TEXTOR shows that molybdenum/graphite-segments with 3 mm graphite brazed on molybdenum-substrate withstand severe repeated TEXTOR plasma discharge conditions without serious damage. Results prove that actively cooled components on the basis of a molybdenum/graphite-composite can sustain a higher heat flux than bulk graphite alone. (author)

  19. Metal nanoparticle mediated space charge and its optical control in an organic hole-only device

    Energy Technology Data Exchange (ETDEWEB)

    Ligorio, G.; Nardi, M. V. [Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor Str. 6, 12489 Berlin (Germany); Steyrleuthner, R.; Neher, D. [Institute of Physics and Astronomy, Universität Potsdam, Karl-Liebknecht Str. 24, 14476 Potsdam (Germany); Ihiawakrim, D. [Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, 67034 Strasbourg, Cedex2 (France); Crespo-Monteiro, N.; Brinkmann, M. [Institut Charles Sadron CNRS, 23 rue du Loess, 67034 Strasbourg (France); Koch, N., E-mail: norbert.koch@physik.hu-berlin.de [Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor Str. 6, 12489 Berlin (Germany); Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Erneuerbare Energien, Albert-Einstein Str. 15, 12489 Berlin (Germany)

    2016-04-11

    We reveal the role of localized space charges in hole-only devices based on an organic semiconductor with embedded metal nanoparticles (MNPs). MNPs act as deep traps for holes and reduce the current density compared to a device without MNPs by a factor of 10{sup 4} due to the build-up of localized space charge. Dynamic MNPs charged neutrality can be realized during operation by electron transfer from excitons created in the organic matrix, enabling light sensing independent of device bias. In contrast to the previous speculations, electrical bistability in such devices was not observed.

  20. Metal nanoparticle mediated space charge and its optical control in an organic hole-only device

    International Nuclear Information System (INIS)

    Ligorio, G.; Nardi, M. V.; Steyrleuthner, R.; Neher, D.; Ihiawakrim, D.; Crespo-Monteiro, N.; Brinkmann, M.; Koch, N.

    2016-01-01

    We reveal the role of localized space charges in hole-only devices based on an organic semiconductor with embedded metal nanoparticles (MNPs). MNPs act as deep traps for holes and reduce the current density compared to a device without MNPs by a factor of 10 4 due to the build-up of localized space charge. Dynamic MNPs charged neutrality can be realized during operation by electron transfer from excitons created in the organic matrix, enabling light sensing independent of device bias. In contrast to the previous speculations, electrical bistability in such devices was not observed.

  1. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  2. Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Deepanjan [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 (United States); Ganguly, Samiran [Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 (India); Dasgupta, S [Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee-247667 (India)

    2007-05-30

    Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p{sup +} poly-n{sup +} poly-p{sup +} poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime.

  3. Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

    International Nuclear Information System (INIS)

    Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

    2007-01-01

    Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

  4. Rational design of metal-organic electronic devices: A computational perspective

    Science.gov (United States)

    Chilukuri, Bhaskar

    Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device

  5. Quantum Transport Simulations of Nanoscale Materials

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2016-01-01

    -performance supercomputers allow us to control and exploit their microscopic properties at the atomic scale, hence making it possible to design novel nanoscale molecular devices with interesting features (e.g switches, rectifiers, negative differential conductance, and high

  6. Sensing at the nanoscale

    Science.gov (United States)

    Demming, Anna; Hierold, Christofer

    2013-11-01

    The merits of nanostructures in sensing may seem obvious, yet playing these attributes to their maximum advantage can be a work of genius. As fast as sensing technology is improving, expectations are growing, with demands for cheaper devices with higher sensitivities and an ever increasing range of functionalities and compatibilities. At the same time tough scientific challenges like low power operation, noise and low selectivity are keeping researchers busy. This special issue on sensing at the nanoscale with guest editor Christofer Hierold from ETH Zurich features some of the latest developments in sensing research pushing at the limits of current capabilities. Cheap and easy fabrication is a top priority. Among the most popular nanomaterials in sensing are ZnO nanowires and in this issue Dario Zappa and colleagues at Brescia University in Italy simplify an already cheap and efficient synthesis method, demonstrating ZnO nanowire fabrication directly onto silicon substrates [1]. Meanwhile Nicolae Barson and colleagues in Germany point out the advantages of flame spray pyrolysis fabrication in a topical review [2] and, maximizing on existing resources, researchers in Denmark and Taiwan report cantilever sensing using a US20 commercial DVD-ROM optical pickup unit as the readout source [3]. The sensor is designed to detect physiological concentrations of soluble urokinase plasminogen activator receptor, a protein associated with inflammation due to HIV, cancer and other infectious diseases. With their extreme properties carbon nanostructures feature prominently in the issue, including the demonstration of a versatile and flexible carbon nanotube strain sensor [4] and a graphene charge sensor with sensitivities of the order of 1.3 × 10-3 e Hz-1/2 [5]. The issue of patterning for sensing devices is also tackled by researchers in the US who demonstrate a novel approach for multicomponent pattering metal/metal oxide nanoparticles on graphene [6]. Changes in electrical

  7. Electromagnetic device for confining a liquid metal and regulating the flow rate

    International Nuclear Information System (INIS)

    Garnier, Marcel; Moreau, R.J.

    1977-01-01

    The description is given of a device for confining a liquid metal jet, characterized in that it comprises in combination, at the jet outlet nozzle, (a) means for producing a high pressure in the jet composed of a coil around the nozzle and located on its outlet, in combination with facilities for passing a high frequency alternating current through the coil and (b) means for suppressing this high pressure. It is stated that this device has many uses, particularly for allowing the use of a relatively large diameter orifice, hence not subject to the risk of clogging, in order to produce a jet with a relatively small diameter. This invention particularly concerns the application of this device for regulating a flow of liquid metal at an outlet orifice located at the lower end of a receptacle containing this liquid metal [fr

  8. Multidisciplinary emergent removal of a metal penoscrotal constriction device

    LENUS (Irish Health Repository)

    Nason, GJ

    2017-03-01

    Strangulation of the genital organs is a rare presentation to the emergency department which requires urgent intervention to avoid long term complications. Penoscrotal constriction devices are either used for autoerotic stimulus or to increase sexual performance by maintaining an erection for a longer period. We report a case of a man who presented with penile strangulation following the application of a titanium penoscrotal constriction ring during sexual intercourse seven hours previously. The Fire Brigade department attended with an electric operated angle grinder to facilitate removal of the ring as standard medical equipment (orthopaedic saws, bolt and bone cutters) were insufficient. Fully functional recovery was achieved.

  9. Label-free colorimetric detection of mercury via Hg2+ ions-accelerated structural transformation of nanoscale metal-oxo clusters

    Science.gov (United States)

    Chen, Kun; She, Shan; Zhang, Jiangwei; Bayaguud, Aruuhan; Wei, Yongge

    2015-11-01

    Mercury and its compounds are known to be extremely toxic but widely distributed in environment. Although many works have been reported to efficiently detect mercury, development of simple and convenient sensors is still longed for quick analyzing mercury in water. In this work, a nanoscale metal-oxo cluster, (n-Bu4N)2[Mo5NaO13(OCH3)4(NO)], (MLPOM), organically-derivatized from monolacunary Lindqvist-type polyoxomolybdate, is found to specifically react with Hg2+ in methanol/water via structural transformation. The MLPOM methanol solution displays a color change from purple to brown within seconds after being mixed with an aqueous solution containing Hg2+. By comparing the structure of polyoxomolybdate before and after reaction, the color change is revealed to be the essentially structural transformation of MLPOM accelerated by Hg2+. Based on this discovery, MLPOM could be utilized as a colorimetric sensor to sense the existence of Hg2+, and a simple and label-free method is developed to selectively detect aqueous Hg2+. Furthermore, the colorimetric sensor has been applied to indicating mercury contamination in industrial sewage.

  10. Chitosan capped nanoscale Fe-MIL-88B-NH2 metal-organic framework as drug carrier material for the pH responsive delivery of doxorubicin

    Science.gov (United States)

    Sivakumar, P.; Priyatharshni, S.; Nagashanmugam, K. B.; Thanigaivelan, A.; Kumar, K.

    2017-08-01

    In recent years nanoscale metal-organic frameworks (NMOFs) are contributing as an effective material for use in drug delivery and imaging applications due to their porous surfaces and easy surface modifications. In this work, Fe-MIL-88B-NH2 NMOFs were successfully synthesized on facile hydrothermal route and 2-aminoterephthalic acid (NH2-BDC) was employed as a bridging ligand to activate amine functional groups on the surface. Amine functional groups not only serve as a structure stabilizing agent but also enhance the loading efficiency of the doxorubicin (DOX) anticancer drug. A pH responsive DOX release was realized by introducing a positively charged chitosan (Chi) capping layer. Upon Chi-coating, cleavage was observed in the Fe-MIL-88B-NH2 structure at acidic pH, while gel-like insoluble structure was formed at basic pH. By utilizing this phenomenon, a pH responsive DOX release system was developed by using Chi capped Fe-MIL-88B-NH2 NMOFs under the designed pH (4.0-8.0). The results suggest the Chi capped Fe-MIL-88B-NH2 can be a promising candidate for future pH responsive drug delivery systems.

  11. Nanoscale zero-valent iron particles supported on reduced graphene oxides by using a plasma technique and their application for removal of heavy-metal ions.

    Science.gov (United States)

    Li, Jie; Chen, Changlun; Zhang, Rui; Wang, Xiangke

    2015-06-01

    Nanoscale zero-valent iron particles supported on reduced graphene oxides (NZVI/rGOs) from spent graphene oxide (GO)-bound iron ions were developed by using a hydrogen/argon plasma reduction method to improve the reactivity and stability of NZVI. The NZVI/rGOs exhibited excellent water treatment performance with excellent removal capacities of 187.16 and 396.37 mg g(-1) for chromium and lead, respectively. Moreover, the NZVI/rGOs could be regenerated by plasma treatment and maintained high removal ability after four cycles. X-ray photoelectron spectroscopy analysis results implied that the removal mechanisms could be attributed to adsorption/precipitation, reduction, or both. Such multiple removal mechanisms by the NZVI/rGOs were attributed to the reduction ability of the NZVI particles and the role of dispersing and stabilizing abilities of the rGOs. The results indicated that the NZVI/rGOs prepared by a hydrogen/argon plasma reduction method might be an effective composite for heavy-metal-ion removal. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. One-pot synthesis of multifunctional nanoscale metal-organic frameworks as an effective antibacterial agent against multidrug-resistant Staphylococcus aureus

    Science.gov (United States)

    Chowdhuri, Angshuman Ray; Das, Balaram; Kumar, Amit; Tripathy, Satyajit; Roy, Somenath; Sahu, Sumanta Kumar

    2017-03-01

    Drug-resistant bacteria are an increasingly serious threat to global public health. In particular, infections from multidrug-resistant (MDR) Gram-positive bacteria (i.e. Staphylococcus aureus) are growing global health concerns. In this work, we report the first use of nanoscale metal-organic frameworks (NMOFs) coencapsulating an antibiotic (vancomycin) and targeting ligand (folic acid) in one pot to enhance therapeutic efficacy against MDR S. aureus. Zeolitic imidazolate framework (ZIF-8) NMOFs, which have globular morphologies coencapsulating vancomycin and folic acid, are characterized by transmission electron microscopy, field-emission scanning electron microscopy, powder x-ray diffraction, ulltraviolet-visible spectroscopy, and dynamic light-scattering techniques. We determined that the presence of folic acid on the surface of the NMOFs is significant in the sense of effective uptake by MDR S. aureus through endocytosis. The functionalized NMOFs transport vancomycin across the cell wall of MDR S. aureus and enhance antibacterial activity, which has been confirmed from studies of the minimum inhibitory concentration, minimum bactericidal concentration, cytotoxicity of bacterial cells, and generation of reactive oxygen species. This work shows that functionalized NMOFs hold great promise for effective treatment of MDR S. aureus.

  13. Metal artifact reduction image reconstruction algorithm for CT of implanted metal orthopedic devices: a work in progress

    International Nuclear Information System (INIS)

    Liu, Patrick T.; Pavlicek, William P.; Peter, Mary B.; Roberts, Catherine C.; Paden, Robert G.; Spangehl, Mark J.

    2009-01-01

    Despite recent advances in CT technology, metal orthopedic implants continue to cause significant artifacts on many CT exams, often obscuring diagnostic information. We performed this prospective study to evaluate the effectiveness of an experimental metal artifact reduction (MAR) image reconstruction program for CT. We examined image quality on CT exams performed in patients with hip arthroplasties as well as other types of implanted metal orthopedic devices. The exam raw data were reconstructed using two different methods, the standard filtered backprojection (FBP) program and the MAR program. Images were evaluated for quality of the metal-cement-bone interfaces, trabeculae ≤1 cm from the metal, trabeculae 5 cm apart from the metal, streak artifact, and overall soft tissue detail. The Wilcoxon Rank Sum test was used to compare the image scores from the large and small prostheses. Interobserver agreement was calculated. When all patients were grouped together, the MAR images showed mild to moderate improvement over the FBP images. However, when the cases were divided by implant size, the MAR images consistently received higher image quality scores than the FBP images for large metal implants (total hip prostheses). For small metal implants (screws, plates, staples), conversely, the MAR images received lower image quality scores than the FBP images due to blurring artifact. The difference of image scores for the large and small implants was significant (p=0.002). Interobserver agreement was found to be high for all measures of image quality (k>0.9). The experimental MAR reconstruction algorithm significantly improved CT image quality for patients with large metal implants. However, the MAR algorithm introduced blurring artifact that reduced image quality with small metal implants. (orig.)

  14. Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

    Science.gov (United States)

    An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

    2015-02-01

    Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

  15. Investigations of the Impact of Biodiesel Metal Contaminants on Emissions Control Devices

    Energy Technology Data Exchange (ETDEWEB)

    Brookshear, D. W.; Lance, M. J.; McCormick, Robert L.; Toops, T. J.

    2017-02-27

    Biodiesel is a renewable fuel with the potential to displace a portion of petroleum use. However, as with any alternative fuel, in order to be a viable choice it must be compatible with the emissions control devices. The finished biodiesel product can contain up to 5 ppm Na+K and 5 ppm Ca+Mg, and these metal impurities can lead to durability issues with the devices used to control emissions in diesel vehicles. Significant work has been performed to understand how the presence of these metals impacts each individual component of diesel emissions control systems, and this chapter summarizes the findings of these research efforts.

  16. Formation of x-ray Newton’s rings from nano-scale spallation shells of metals in laser ablation

    Directory of Open Access Journals (Sweden)

    Masaharu Nishikino

    2017-01-01

    Full Text Available The initial stages of the femtosecond (fs laser ablation process of gold, platinum, and tungsten were observed by single-shot soft x-ray imaging technique. The formation and evolution of soft x-ray Newton’s rings (NRs were found for the first time. The soft x-ray NRs are caused by the interference between the bulk ablated surface and nanometer-scale thin spallation layer; they originate from the metal surface at pump energy fluence of around 1 J/cm2 and work as a flying soft x-ray beam splitter.

  17. Carrier Dynamics Analysis in Metal-SemiconductorMetal Device for mid-IR Silicon Photonics

    DEFF Research Database (Denmark)

    Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao

    A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...

  18. Carrier dynamics analysis in metal-semiconductor-metal device for mid-IR silicon photonics

    DEFF Research Database (Denmark)

    Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao

    2017-01-01

    A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...

  19. Characterization and device physics of polymer semiconducting devices with metal oxide contacts

    NARCIS (Netherlands)

    de Bruyn, Paul

    2018-01-01

    Dit proefschrift beschrijft de fabricatie en karakterisatie van organische elektronische devices met metaal oxide contacten. Voornamelijk zijn zink oxide en vanadium pentoxide onderzocht. Manieren om op lage temperatuur dunne lagen te maken van deze metaal oxides zijn onderzocht om ze verenigbaar te

  20. Metal-organic molecular device for non-volatile memory storage

    International Nuclear Information System (INIS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-01-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  1. Recent advances in porous nanoparticles for drug delivery in antitumoral applications: inorganic nanoparticles and nanoscale metal-organic frameworks.

    Science.gov (United States)

    Baeza, Alejandro; Ruiz-Molina, Daniel; Vallet-Regí, María

    2017-06-01

    Nanotechnology has provided new tools for addressing unmet clinical situations, especially in the oncology field. The development of smart nanocarriers able to deliver chemotherapeutic agents specifically to the diseased cells and to release them in a controlled way has offered a paramount advantage over conventional therapy. Areas covered: Among the different types of nanoparticle that can be employed for this purpose, inorganic porous materials have received significant attention in the last decade due to their unique properties such as high loading capacity, chemical and physical robustness, low toxicity and easy and cheap production in the laboratory. This review discuss the recent advances performed in the application of porous inorganic and metal-organic materials for antitumoral therapy, paying special attention to the application of mesoporous silica, porous silicon and metal-organic nanoparticles. Expert opinion: The use of porous inorganic nanoparticles as drug carriers for cancer therapy has the potential to improve the life expectancy of the patients affected by this disease. However, much work is needed to overcome their drawbacks, which are aggravated by their hard nature, exploiting the advantages offered by highly the ordered pore network of these materials.

  2. Spin-dependent hot electron transport and nano-scale magnetic imaging of metal/Si structures

    International Nuclear Information System (INIS)

    Kaidatzis, A.

    2008-10-01

    In this work, we experimentally study spin-dependent hot electron transport through metallic multilayers (ML), containing single magnetic layers or 'spin-valve' (SV) tri layers. For this purpose, we have set up a ballistic electron emission microscope (BEEM), a three terminal extension of scanning tunnelling microscopy on metal/semiconductor structures. The implementation of the BEEM requirements into the sample fabrication is described in detail. Using BEEM, the hot electron transmission through the ML's was systematically measured in the energy range 1-2 eV above the Fermi level. By varying the magnetic layer thickness, the spin-dependent hot electron attenuation lengths were deduced. For the materials studied (Co and NiFe), they were compared to calculations and other determinations in the literature. For sub-monolayer thickness, a non uniform morphology was observed, with large transmission variations over sub-nano-metric distances. This effect is not yet fully understood. In the imaging mode, the magnetic configurations of SV's were studied under field, focusing on 360 degrees domain walls in Co layers. The effects of the applied field intensity and direction on the DW structure were studied. The results were compared quantitatively to micro-magnetic calculations, with an excellent agreement. From this, it can be shown that the BEEM magnetic resolution is better than 50 nm. (author)

  3. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

    2013-01-01

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

  4. Probing Interaction Between Platinum Group Metal (PGM) and Non-PGM Support Through Surface Characterization and Device Performance

    Science.gov (United States)

    Saha, Shibely

    High cost and limited abundance of Platinum (Pt) have hindered effective commercialization of Proton Exchange Membrane Fuel Cell and Electrolyzer. Efforts have been undertaken to reduce precious group metal (PGM) requirement for these devices without compromising the activity of the catalyst by using transition metal carbides (TMC) as non-PGM support thanks to their similar electronic and geometric structures as Pt. In this work Mo2C was selected as non-PGM support and Pt was used as the PGM of interest. We hypothesize that the hollow nanotube morphology of Mo2C support combined with Pt nano particles deposited on it via atomic layer deposition (ALD) technique would allow increased interaction between them which may increase the activity of Pt and Mo2C as well as maximize the Pt active surface area. Specifically, a rotary ALD equipment was used to grow Pt particles from atomic level to 2--3 nanometers by simply adjusting number of ALD cycles in order to probe the interaction between the deposited Pt nanoparticles and Mo2C nanotube support. Interaction between the Pt and Mo2 C was analyzed via surface characterization and electrochemical characterization. Interaction between Pt and Mo2C arises due to the lattice mismatch between Pt and Mo2C as well as electron migration between them. Lattice spacing analysis using high resolution transmission electron microscopy (HRTEM) images, combined with Pt binding energy shift in XPS results, clearly showed strong bonding between Pt nanoparticles and the Mo2C nanotube support in all the resultant Pt/Mo2C samples. We postulate that this strong interaction is responsible for the significantly enhanced durability observed in our constant potential electrolysis (CPE) and accelerated degradation testing (ADT). Of the three samples from different ALD cycles (15, 50 and 100), Mo2C nanotubes modified by 50 (1.07 wt% Pt loading) and 100 cycles (4.4 wt% Pt) of Pt deposition, showed higher HER and HOR activity per Pt mass than commercial

  5. Research and development of metals for medical devices based on clinical needs

    Directory of Open Access Journals (Sweden)

    Takao Hanawa

    2012-01-01

    Full Text Available The current research and development of metallic materials used for medicine and dentistry is reviewed. First, the general properties required of metals used in medical devices are summarized, followed by the needs for the development of α + β type Ti alloys with large elongation and β type Ti alloys with a low Young's modulus. In addition, nickel-free Ni–Ti alloys and austenitic stainless steels are described. As new topics, we review metals that are bioabsorbable and compatible with magnetic resonance imaging. Surface treatment and modification techniques to improve biofunctions and biocompatibility are categorized, and the related problems are presented at the end of this review. The metal surface may be biofunctionalized by various techniques, such as dry and wet processes. These techniques make it possible to apply metals to scaffolds in tissue engineering.

  6. Metal nanoparticle mediated space charge and its optical control in an organic hole-only device

    OpenAIRE

    Ligorio, G.; Nardi, M. V.; Steyrleuthner, Robert; Ihiawakrim, D.; Crespo-Monteiro, N.; Brinkmann, M.; Neher, D.; Koch, N.

    2017-01-01

    We reveal the role of localized space charges in hole-only devices based on an organic semiconductor with embedded metal nanoparticles (MNPs). MNPs act as deep traps for holes and reduce the current density compared to a device without MNPs by a factor of 104 due to the build-up of localized space charge. Dynamic MNPs charged neutrality can be realized during operation by electron transfer from excitons created in the organic matrix, enabling light sensing independent of device bias. In contr...

  7. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  8. Heat transfer across the interface between nanoscale solids and gas.

    Science.gov (United States)

    Cheng, Chun; Fan, Wen; Cao, Jinbo; Ryu, Sang-Gil; Ji, Jie; Grigoropoulos, Costas P; Wu, Junqiao

    2011-12-27

    When solid materials and devices scale down in size, heat transfer from the active region to the gas environment becomes increasingly significant. We show that the heat transfer coefficient across the solid-gas interface behaves very differently when the size of the solid is reduced to the nanoscale, such as that of a single nanowire. Unlike for macroscopic solids, the coefficient is strongly pressure dependent above ∼10 Torr, and at lower pressures it is much higher than predictions of the kinetic gas theory. The heat transfer coefficient was measured between a single, free-standing VO(2) nanowire and surrounding air using laser thermography, where the temperature distribution along the VO(2) nanowire was determined by imaging its domain structure of metal-insulator phase transition. The one-dimensional domain structure along the nanowire results from the balance between heat generation by the focused laser and heat dissipation to the substrate as well as to the surrounding gas, and thus serves as a nanoscale power-meter and thermometer. We quantified the heat loss rate across the nanowire-air interface, and found that it dominates over all other heat dissipation channels for small-diameter nanowires near ambient pressure. As the heat transfer across the solid-gas interface is nearly independent of the chemical identity of the solid, the results reveal a general scaling relationship for gaseous heat dissipation from nanostructures of all solid materials, which is applicable to nanoscale electronic and thermal devices exposed to gaseous environments.

  9. Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

    Science.gov (United States)

    Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

    2018-03-07

    Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

  10. Visualizing copper assisted graphene growth in nanoscale

    Science.gov (United States)

    Rosmi, Mohamad Saufi; Yusop, Mohd Zamri; Kalita, Golap; Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki

    2014-01-01

    Control synthesis of high quality large-area graphene on transition metals (TMs) by chemical vapor deposition (CVD) is the most fascinating approach for practical device applications. Interaction of carbon atoms and TMs is quite critical to obtain graphene with precise layer number, crystal size and structure. Here, we reveal a solid phase reaction process to achieve Cu assisted graphene growth in nanoscale by in-situ transmission electron microscope (TEM). Significant structural transformation of amorphous carbon nanofiber (CNF) coated with Cu is observed with an applied potential in a two probe system. The coated Cu particle recrystallize and agglomerate toward the cathode with applied potential due to joule heating and large thermal gradient. Consequently, the amorphous carbon start crystallizing and forming sp2 hybridized carbon to form graphene sheet from the tip of Cu surface. We observed structural deformation and breaking of the graphene nanoribbon with a higher applied potential, attributing to saturated current flow and induced Joule heating. The observed graphene formation in nanoscale by the in-situ TEM process can be significant to understand carbon atoms and Cu interaction. PMID:25523645

  11. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    Science.gov (United States)

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

  12. Metal-free, single-polymer device exhibits resistive memory effect

    KAUST Repository

    Bhansali, Unnat Sampatraj; Khan, Yasser; Cha, Dong Kyu; Almadhoun, Mahmoud N.; Li, Ruipeng; Chen, Long; Amassian, Aram; Odeh, Ihab N.; Alshareef, Husam N.

    2013-01-01

    All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.

  13. Metal-free, single-polymer device exhibits resistive memory effect

    KAUST Repository

    Bhansali, Unnat Sampatraj

    2013-12-23

    All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.

  14. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

    Directory of Open Access Journals (Sweden)

    Michael Loong Peng Tan

    2013-01-01

    Full Text Available Long channel carbon nanotube transistor (CNT can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL effects in silicon MOSFET while sustaining the same unit area at higher current density.

  15. Electrochemical sensors and devices for heavy metals assay in water: the French groups' contribution

    Directory of Open Access Journals (Sweden)

    Luca ePUJOL

    2014-04-01

    Full Text Available A great challenge in the area of heavy metal trace detection is the development of electrochemical techniques and devices which are user-friendly, robust, selective, with low detection limits and allowing fast analyses. This review presents the major contribution of the French scientific academic community in the field of electrochemical sensors and electroanalytical methods within the last 20 years. From the well-known polarography to the up-to-date generation of functionalized interfaces, the different strategies dedicated to analytical performances improvement are exposed: stripping voltammetry, solid mercury-free electrode, ion selective sensor, carbon based materials, chemically modified electrodes, nano-structured surfaces. The paper particularly emphasizes their advantages and limits face to the last Water Frame Directive devoted to the Environmental Quality Standards for heavy metals. Recent trends on trace metal speciation as well as on automatic on line monitoring devices are also evoked.

  16. Synthesis and Electrospraying of Nanoscale MOF (Metal Organic Framework) for High-Performance CO2 Adsorption Membrane

    Science.gov (United States)

    Wahiduzzaman; Allmond, Kelsey; Stone, John; Harp, Spencer; Mujibur, Khan

    2017-01-01

    We report the sonochemical synthesis of MOF (metal organic framework) nanoparticles of 30-200 nm in size and electrospraying of those particles on electrospun nanofibers to process a MOF-attached nanofibrous membrane. This membrane displayed significant selectivity towards CO2 and capacity of adsorbing with 4000-5000 ppm difference from a mixed gas flow of 1% CO2 and 99% N2. Applying ultrasonic waves during the MOF synthesis offered rapid dispersion and formation of crystalline MOF nanoparticles in room temperature. The MOF nanoparticles of 100-200 nm in size displayed higher surface area and adsorption capacity comparing to that of 30-60 nm in size. Nanofibrous membrane was produced by electrospinning of MOF blended PAN solution followed by electrospraying of additional MOF nanoparticles. This yielded uniform MOF deposition on nanofibers, occurred due to electrostatic attraction between highly charged nanoparticles and conductive nanofibers. A test bench for real-time CO2 adsorption at room temperature was built with non-dispersive Infrared (NDIR) CO2 sensors. Comparative tests were performed on the membrane to investigate its enhanced adsorption capacity. Three layers of the as-produced membranes displayed CO2 adsorption for approximately 2 h. Thermogravimetric analysis (TGA) of the membrane showed the thermal stability of the MOF and PAN up to 290 and 425 °C, respectively.

  17. Computer controlled experimental device for investigations of tribological influences in sheet metal forming

    Directory of Open Access Journals (Sweden)

    Milan Djordjevic

    2012-05-01

    Full Text Available Sheet metal forming, especially deep drawing process, is influenced by many factors. Blank holding force and drawbead displacement are two of them that can be controlled during the forming process. For this purpose, electro-hydraulic computerized sheet-metal strip sliding device has been constructed. Basic characteristic of this device is realization of variable contact pressure and drawbead height as functions of time or stripe displacement. There are both, pressure and drawbead, ten linear and nonlinear functions. Additional features consist of the ability to measure drawing force, contact pressure, drawbead displacement etc. Presented in the paper are the device overview and the first results of steel sheet stripe sliding over rounded  drawbead.

  18. COMPUTER CONTROLLED EXPERIMENTAL DEVICE FOR INVESTIGATIONS OF TRIBOLOGICAL INFLUENCES IN SHEET METAL FORMING

    Directory of Open Access Journals (Sweden)

    Tomislav Vujinović

    2012-05-01

    Full Text Available Sheet metal forming, especially deep drawing process is influenced by many factors. Blank holding force and drawbead displacement are two of them that can be controlled during the forming process.For this purpose, an electro-hydraulic computerized sheet-metal strip sliding device has been constructed. The basic characteristic of this device is realization of variable contact pressure and drawbead height as functions of time or stripe displacement. There are both, pressure and drawbead, ten linear and nonlinear functions. Additional features consist of the ability to measure drawing force, contact pressure, drawbead displacement etc.The device overview and first results of steel sheet stripe sliding over rounded drawbead are presented in the paper.

  19. Combining in situ transmission electron microscopy irradiation experiments with cluster dynamics modeling to study nanoscale defect agglomeration in structural metals

    International Nuclear Information System (INIS)

    Xu Donghua; Wirth, Brian D.; Li Meimei; Kirk, Marquis A.

    2012-01-01

    We present a combinatorial approach that integrates state-of-the-art transmission electron microscopy (TEM) in situ irradiation experiments and high-performance computing techniques to study irradiation defect dynamics in metals. Here, we have studied the evolution of visible defect clusters in nanometer-thick molybdenum foils under 1 MeV krypton ion irradiation at 80 °C through both cluster dynamics modeling and in situ TEM experiments. The experimental details are reported elsewhere; we focus here on the details of model construction and comparing the model with the experiments. The model incorporates continuous production of point defects and/or small clusters, and the accompanying interactions, which include clustering, recombination and loss to the surfaces that result from the diffusion of the mobile defects. To account for the strong surface effect in thin TEM foils, the model includes one-dimensional spatial dependence along the foil depth, and explicitly treats the surfaces as black sinks. The rich amount of data (cluster number density and size distribution at a variety of foil thickness, irradiation dose and dose rate) offered by the advanced in situ experiments has allowed close comparisons with computer modeling and permitted significant validation and optimization of the model in terms of both physical model construct (damage production mode, identities of mobile defects) and parameterization (diffusivities of mobile defects). The optimized model exhibits good qualitative and quantitative agreement with the in situ TEM experiments. The combinatorial approach is expected to bring a unique opportunity for the study of radiation damage in structural materials.

  20. A device for maintenance of large diameter metal seat plug valve; Dispositivo para manutencao de valvula macho de grande diametro com sede metal-metal

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Osmar Jose Leite da [PETROBRAS, Rio de Janeiro, RJ (Brazil)

    2003-07-01

    The present work is a PETROBRAS S.A. patent request, which presents an alternative for national technology in the metal seat Plug Valve maintenance area, widely used in Petrochemical plants. Before this device, the only alternative for national companies to accomplish a reliable maintenance was to ship of the valves to their makers abroad. However, the high cost and long shipping time made this kind of maintenance unfeasible. These factors led to the beginning of the research resulting in the device described here. The device assures the valves' seat-sealing reliability. This device has been successfully used by two national Refineries : 'Presidente Bernardes' Refinery and 'Planalto Paulista' Refinery. (author)

  1. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Impact of scaling on the performance and reliability degradation of metal-contacts in NEMS devices

    KAUST Repository

    Dadgour, Hamed F.

    2011-04-01

    Nano-electro-mechanical switches (NEMS) offer new possibilities for the design of ultra energy-efficient systems; however, thus far, all the fabricated NEMS devices require high supply voltages that limit their applicability for logic designs. Therefore, research is being conducted to lower the operating voltages by scaling down the physical dimensions of these devices. However, the impact of device scaling on the electrical and mechanical properties of metal contacts in NEMS devices has not been thoroughly investigated in the literature. Such a study is essential because metal contacts play a critical role in determining the overall performance and reliability of NEMS. Therefore, the comprehensive analytical study presented in this paper highlights the performance and reliability degradations of such metal contacts caused by scaling. The proposed modeling environment accurately takes into account the impact of roughness of contact surfaces, elastic/plastic deformation of contacting asperities, and various inter-molecular forces between mating surfaces (such as Van der Waals and capillary forces). The modeling results are validated and calibrated using available measurement data. This scaling analysis indicates that the key contact properties of gold contacts (resistance, stiction and wear-out) deteriorate "exponentially" with scaling. Simulation results demonstrate that reliable (stiction-free) operation of very small contact areas (≈ 6nm x 6nm) will be a daunting task due to the existence of strong surface forces. Hence, contact degradation is identified as a major problem to the scaling of NEMS transistors. © 2011 IEEE.

  3. Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

    DEFF Research Database (Denmark)

    Hansen, Christian Rein; Sørensen, Thomas Just; Glyvradal, Magni

    2009-01-01

    By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum....... By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers...

  4. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  5. Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

    Science.gov (United States)

    Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

    2016-04-01

    The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

  6. Small angle neutron scattering study of metallic alloys by a double crystal device

    International Nuclear Information System (INIS)

    Cser, L.; Kovacs, I.; Kroo, N.; Zsigmond, Gy.

    1982-06-01

    A double crystal small angle neutron scattering (SANS) device was built and a simple method for measuring the integrated SANS intensity was developed. The device and the method were tested and the possibility of future applications was demonstrated by measurements on different samples. The test measurements were performed on iron and teflon slabs of different thickness. On Fe-B metallic glasses a SANS intensity originating mainly from the multiple magnetic refraction at domain boundaries was observed. A very weak SANS intensity was found on turbine blades. The integrated SANS intensity was shown to correlate with the running time of the blades. Similar measurements were performed on artificially deformed steel samples. (author)

  7. Measurement of Electromagnetic Shielding Effectiveness of Woven Fabrics Containing Metallic Yarns by Mobile Devices

    Directory of Open Access Journals (Sweden)

    Erhan Kenan ÇEVEN

    2016-10-01

    Full Text Available In this study, we introduce an alternative method to evaluate the electromagnetic shielding effectiveness (EMSE of woven fabrics containing metal wires. For experimental measurements, hybrid silk viscose yarns containing metal wires were first produced. Conductive test fabrics were then produced using the hybrid weft yarns and polyester warp yarns. The produced fabrics were separated in two parts and laminated together after rotating one fabric by 90 degrees to create a grid structure. The laminated fabrics were then folded by several times to create multiple layers such as 2,4,8,12,16. The EMSE of the multiple layered fabrics was measured over GSM signals received by a mobile device. For EMSE evaluation, the mobile device was placed between the laminated fabrics. The EMSE values of the fabrics were then calculated in accordance with the power variations of GSM signals.

  8. Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

    International Nuclear Information System (INIS)

    He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

    2015-01-01

    We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

  9. Implanted cardiac devices are reliably detected by commercially available metal detectors

    DEFF Research Database (Denmark)

    Holm, Katja Fiedler; Hjortshøj, Søren Pihlkjær; Pehrson, Steen

    2013-01-01

    Explosions of Cardiovascular Implantable Electronic Devices (CIEDs) (pacemakers, defibrillators, and loop recorders) are a well-recognized problem during cremation, due to lithium-iodine batteries. In addition, burial of the deceased with a CIED can present a potential risk for environmental...... contamination. Therefore, detection of CIEDs in the deceased would be of value. This study evaluated a commercially available metal detector for detecting CIEDs....

  10. Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

    International Nuclear Information System (INIS)

    Kim, Y; Pham, C; Chang, J P

    2015-01-01

    This review focuses on recent accomplishments on complex metal oxide based multifunctional materials and the potential they hold in advancing integrated circuits. It begins with metal oxide based high-κ materials to highlight the success of their integration since 45 nm complementary metal–oxide–semiconductor (CMOS) devices. By simultaneously offering a higher dielectric constant for improved capacitance as well as providing a thicker physical layer to prevent the quantum mechanical tunnelling of electrons, high-κ materials have enabled the continued down-scaling of CMOS based devices. The most recent technology driver has been the demand to lower device power consumption, which requires the design and synthesis of novel materials, such as complex metal oxides that exhibit remarkable tunability in their ferromagnetic, ferroelectric and multiferroic properties. These properties make them suitable for a wide variety of applications such as magnetoelectric random access memory, radio frequency band pass filters, antennae and magnetic sensors. Single-phase multiferroics, while rare, offer unique functionalities which have motivated much scientific and technological research to ascertain the origins of their multiferroicity and their applicability to potential devices. However, due to the weak magnetoelectric coupling for single-phase multiferroics, engineered multiferroic composites based on magnetostrictive ferromagnets interfacing piezoelectrics or ferroelectrics have shown enhanced multiferroic behaviour from effective strain coupling at the interface. In addition, nanostructuring of the ferroic phases has demonstrated further improvement in the coupling effect. Therefore, single-phase and engineered composite multiferroics consisting of complex metal oxides are reviewed in terms of magnetoelectric coupling effects and voltage controlled ferromagnetic properties, followed by a review on the integration challenges that need to be overcome to realize the

  11. Plasma edge and plasma-wall interaction modelling: Lessons learned from metallic devices

    Directory of Open Access Journals (Sweden)

    S. Wiesen

    2017-08-01

    Full Text Available Robust power exhaust schemes employing impurity seeding are needed for target operational scenarios in present day tokamak devices with metallic plasma-facing components (PFCs. For an electricity-producing fusion power plant at power density Psep/R>15MW/m divertor detachment is a requirement for heat load mitigation. 2D plasma edge transport codes like the SOLPS code as well as plasma-wall interaction (PWI codes are key to disentangle relevant physical processes in power and particle exhaust. With increased quantitative credibility in such codes more realistic and physically sound estimates of the life-time expectations and performance of metallic PFCs can be accomplished for divertor conditions relevant for ITER and DEMO. An overview is given on the recent progress of plasma edge and PWI modelling activities for (carbon-free metallic devices, that include results from JET with the ITER-like wall, ASDEX Upgrade and Alcator C-mod. It is observed that metallic devices offer an opportunity to progress the understanding of underlying plasma physics processes in the edge. The validation of models can be substantially improved by eliminating carbon from the experiment as well as from the numerical system with reduced degrees of freedom as no chemical sputtering from amorphous carbon layers and no carbon or hydro-carbon transport are present. With the absence of carbon as the primary plasma impurity and given the fact that the physics of the PWI at metallic walls is less complex it is possible to isolate the crucial plasma physics processes relevant for particle and power exhaust. For a reliable 2D dissipative plasma exhaust model these are: cross-field drifts, complete kinetic neutral physics, geometry effects (including main-chamber, divertor and sub-divertor structures, SOL transport reflecting also the non-diffusive nature of anomalous transport, as well as transport within the pedestal region in case of significant edge impurity radiation

  12. Heat-driven liquid metal cooling device for the thermal management of a computer chip

    Energy Technology Data Exchange (ETDEWEB)

    Ma Kunquan; Liu Jing [Cryogenic Laboratory, PO Box 2711, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080 (China)

    2007-08-07

    The tremendous heat generated in a computer chip or very large scale integrated circuit raises many challenging issues to be solved. Recently, liquid metal with a low melting point was established as the most conductive coolant for efficiently cooling the computer chip. Here, by making full use of the double merits of the liquid metal, i.e. superior heat transfer performance and electromagnetically drivable ability, we demonstrate for the first time the liquid-cooling concept for the thermal management of a computer chip using waste heat to power the thermoelectric generator (TEG) and thus the flow of the liquid metal. Such a device consumes no external net energy, which warrants it a self-supporting and completely silent liquid-cooling module. Experiments on devices driven by one or two stage TEGs indicate that a dramatic temperature drop on the simulating chip has been realized without the aid of any fans. The higher the heat load, the larger will be the temperature decrease caused by the cooling device. Further, the two TEGs will generate a larger current if a copper plate is sandwiched between them to enhance heat dissipation there. This new method is expected to be significant in future thermal management of a desk or notebook computer, where both efficient cooling and extremely low energy consumption are of major concern.

  13. Heat-driven liquid metal cooling device for the thermal management of a computer chip

    International Nuclear Information System (INIS)

    Ma Kunquan; Liu Jing

    2007-01-01

    The tremendous heat generated in a computer chip or very large scale integrated circuit raises many challenging issues to be solved. Recently, liquid metal with a low melting point was established as the most conductive coolant for efficiently cooling the computer chip. Here, by making full use of the double merits of the liquid metal, i.e. superior heat transfer performance and electromagnetically drivable ability, we demonstrate for the first time the liquid-cooling concept for the thermal management of a computer chip using waste heat to power the thermoelectric generator (TEG) and thus the flow of the liquid metal. Such a device consumes no external net energy, which warrants it a self-supporting and completely silent liquid-cooling module. Experiments on devices driven by one or two stage TEGs indicate that a dramatic temperature drop on the simulating chip has been realized without the aid of any fans. The higher the heat load, the larger will be the temperature decrease caused by the cooling device. Further, the two TEGs will generate a larger current if a copper plate is sandwiched between them to enhance heat dissipation there. This new method is expected to be significant in future thermal management of a desk or notebook computer, where both efficient cooling and extremely low energy consumption are of major concern

  14. Quantum Transport Simulations of Nanoscale Materials

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2016-01-07

    Nanoscale materials have many potential advantages because of their quantum confinement, cost and producibility by low-temperature chemical methods. Advancement of theoretical methods as well as the availability of modern high-performance supercomputers allow us to control and exploit their microscopic properties at the atomic scale, hence making it possible to design novel nanoscale molecular devices with interesting features (e.g switches, rectifiers, negative differential conductance, and high magnetoresistance). In this thesis, state-of-the-art theoretical calculations have been performed for the quantum transport properties of nano-structured materials within the framework of Density Functional Theory (DFT) and the Nonequilibrium Green\\'s Function (NEGF) formalism. The switching behavior of a dithiolated phenylene-vinylene oligomer sandwiched between Au(111) electrodes is investigated. The molecule presents a configurational bistability, which can be exploited in constructing molecular memories, switches, and sensors. We find that protonation of the terminating thiol groups is at the origin of the change in conductance. H bonding at the thiol group weakens the S-Au bond, and thus lowers the conductance. Our results allow us to re-interpret the experimental data originally attributing the conductance reduction to H dissociation. Also examined is current-induced migration of atoms in nanoscale devices that plays an important role for device operation and breakdown. We studied the migration of adatoms and defects in graphene and carbon nanotubes under finite bias. We demonstrate that current-induced forces within DFT are non-conservative, which so far has only been shown for model systems, and can lower migration barrier heights. Further, we investigated the quantum transport behavior of an experimentally observed diblock molecule by varying the amounts of phenyl (donor) and pyrimidinyl (acceptor) rings under finite bias. We show that a tandem configuration of

  15. Progress of alternative sintering approaches of inkjet-printed metal inks and their application for manufacturing of flexible electronic devices

    NARCIS (Netherlands)

    Wünscher, S.; Abbel, R.; Perelaer, J.; Schubert, U.S.

    2014-01-01

    Well-defined high resolution structures with excellent electrical conductivities are key components of almost every electronic device. Producing these by printing metal based conductive inks on polymer foils represents an important step forward towards the manufacturing of plastic electronic

  16. Stabilization of metal-oxide bulk switching device with diffused Bi contacts

    International Nuclear Information System (INIS)

    Lalevic, B.; Shoga, M.; Gvishi, M.; Levy, S.; Army ERADCOM, Ft. Monmouth, NJ)

    1979-01-01

    Threshold switching from the high to low resistance state has been investigated in the polycrystalline and single crystal NbO/sub x/ (where x is approximately = 2) metal-oxide devices. Stable and reproducible switching performance is observed in a configuration Bi-NbO 2 -Bi where Bi electrodes were covered with Au films. Improvement in the device performance is attributed to the Bi diffusion into NbO/sub x/ which has been confirmed by the Auger electron spectroscopy. Typical off state resistance of these devices is approx.100 KΩ and threshold switching voltage in the range from 100 to 2500 V. The delay time tau/sub d/ is exponentially dependent on the applied voltage V/sub appl/ and at larger V/sub appl'/ the delay time is less than a nanosecond. Recovery time of a device is approx.0.5 μsec as determined by the method of decreasing time interval between two successive pulses. Holding voltage is approx.40 V. The pulsed switched devices can withstand pulse durations between 0.1 to 3 μsec, repetition rate of 100 C/s and current intensities of 10 to 15 A, or 25 A peak with the applied pulse duration of 20 μsec, single shot

  17. 3D printed metal molds for hot embossing plastic microfluidic devices.

    Science.gov (United States)

    Lin, Tung-Yi; Do, Truong; Kwon, Patrick; Lillehoj, Peter B

    2017-01-17

    Plastics are one of the most commonly used materials for fabricating microfluidic devices. While various methods exist for fabricating plastic microdevices, hot embossing offers several unique advantages including high throughput, excellent compatibility with most thermoplastics and low start-up costs. However, hot embossing requires metal or silicon molds that are fabricated using CNC milling or microfabrication techniques which are time consuming, expensive and required skilled technicians. Here, we demonstrate for the first time the fabrication of plastic microchannels using 3D printed metal molds. Through optimization of the powder composition and processing parameters, we were able to generate stainless steel molds with superior material properties (density and surface finish) than previously reported 3D printed metal parts. Molds were used to fabricate poly(methyl methacrylate) (PMMA) replicas which exhibited good feature integrity and replication quality. Microchannels fabricated using these replicas exhibited leak-free operation and comparable flow performance as those fabricated from CNC milled molds. The speed and simplicity of this approach can greatly facilitate the development (i.e. prototyping) and manufacture of plastic microfluidic devices for research and commercial applications.

  18. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  19. Systems engineering at the nanoscale

    Science.gov (United States)

    Benkoski, Jason J.; Breidenich, Jennifer L.; Wei, Michael C.; Clatterbaughi, Guy V.; Keng, Pei Yuin; Pyun, Jeffrey

    2012-06-01

    Nanomaterials have provided some of the greatest leaps in technology over the past twenty years, but their relatively early stage of maturity presents challenges for their incorporation into engineered systems. Perhaps even more challenging is the fact that the underlying physics at the nanoscale often run counter to our physical intuition. The current state of nanotechnology today includes nanoscale materials and devices developed to function as components of systems, as well as theoretical visions for "nanosystems," which are systems in which all components are based on nanotechnology. Although examples will be given to show that nanomaterials have indeed matured into applications in medical, space, and military systems, no complete nanosystem has yet been realized. This discussion will therefore focus on systems in which nanotechnology plays a central role. Using self-assembled magnetic artificial cilia as an example, we will discuss how systems engineering concepts apply to nanotechnology.

  20. Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

    Science.gov (United States)

    Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

    2015-09-01

    Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

  1. Should in the treatment of osteochondritis dissecans biodegradable or metallic fixation devices be used? A comparative study in goat knees

    NARCIS (Netherlands)

    Wouters, Diederick B.; Bos, Rudolf R. M.; van Horn, Jim R.; van Luyn, Marja J. A.

    Most of the metallic devices have to be removed, treating osteochondritis dissecans lesions. This animal study describes the biological and mechanical behavior of screws and pins, made of commercially available PGA/PLA and PLA96 and metallic screws and pins, used for fragment fixation. A sham

  2. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  3. Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

    Science.gov (United States)

    Munira, Kamaram; Romero, Jonathon; Butler, William H.

    2014-05-01

    Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

  4. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  5. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon

    2007-01-01

    In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2x10 6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1x10 10 cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming

  6. Double-Sided Electrochromic Device Based on Metal-Organic Frameworks.

    Science.gov (United States)

    Mjejri, Issam; Doherty, Cara M; Rubio-Martinez, Marta; Drisko, Glenna L; Rougier, Aline

    2017-11-22

    Devices displaying controllably tunable optical properties through an applied voltage are attractive for smart glass, mirrors, and displays. Electrochromic material development aims to decrease power consumption while increasing the variety of attainable colors, their brilliance, and their longevity. We report the first electrochromic device constructed from metal organic frameworks (MOFs). Two MOF films, HKUST-1 and ZnMOF-74, are assembled so that the oxidation of one corresponds to the reduction of the other, allowing the two sides of the device to simultaneously change color. These MOF films exhibit cycling stability unrivaled by other MOFs and a significant optical contrast in a lithium-based electrolyte. HKUST-1 reversibly changed from bright blue to light blue and ZnMOF-74 from yellow to brown. The electrochromic device associates the two MOF films via a PMMA-lithium based electrolyte membrane. The color-switching of these MOFs does not arise from an organic-linker redox reaction, signaling unexplored possibilities for electrochromic MOF-based materials.

  7. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

    Science.gov (United States)

    Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

    2017-12-01

    Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

  8. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  9. Dynamics at the nanoscale

    International Nuclear Information System (INIS)

    Stoneham, A.M.; Gavartin, J.L.

    2007-01-01

    However fascinating structures may be at the nanoscale, time-dependent behaviour at the nanoscale has far greater importance. Some of the dynamics is random, with fluctuations controlling rate processes and making thermal ratchets possible. Some of the dynamics causes the transfer of energy, of signals, or of charge. Such transfers are especially efficiently controlled in biological systems. Other dynamical processes occur when we wish to control the nanoscale, e.g., to avoid local failures of gate dielectrics, or to manipulate structures by electronic excitation, to use spin manipulation in quantum information processing. Our prime purpose is to make clear the enormous range and variety of time-dependent nanoscale phenomena

  10. Two-dimensional linear elasticity theory of magneto-electro-elastic plates considering surface and nonlocal effects for nanoscale device applications

    Science.gov (United States)

    Wang, Wenjun; Li, Peng; Jin, Feng

    2016-09-01

    A novel two-dimensional linear elastic theory of magneto-electro-elastic (MEE) plates, considering both surface and nonlocal effects, is established for the first time based on Hamilton’s principle and the Lee plate theory. The equations derived are more general, suitable for static and dynamic analyses, and can also be reduced to the piezoelectric, piezomagnetic, and elastic cases. As a specific application example, the influences of the surface and nonlocal effects, poling directions, piezoelectric phase materials, volume fraction, damping, and applied magnetic field (i.e., constant applied magnetic field and time-harmonic applied magnetic field) on the magnetoelectric (ME) coupling effects are first investigated based on the established two-dimensional plate theory. The results show that the ME coupling coefficient has an obvious size-dependent characteristic owing to the surface effects, and the surface effects increase the ME coupling effects significantly when the plate thickness decreases to its critical thickness. Below this critical thickness, the size-dependent effect is obvious and must be considered. In addition, the output power density of a magnetic energy nanoharvester is also evaluated using the two-dimensional plate theory obtained, with the results showing that a relatively larger output power density can be achieved at the nanoscale. This study provides a mathematical tool which can be used to analyze the mechanical properties of nanostructures theoretically and numerically, as well as evaluating the size effect qualitatively and quantitatively.

  11. Fabrication of an artificial nanosucker device with a large area nanotube array of metallic glass.

    Science.gov (United States)

    Chen, Wei-Ting; Manivannan, Karthikeyan; Yu, Chia-Chi; Chu, Jinn P; Chen, Jem-Kun

    2018-01-18

    The concurrent attachment and detachment movements of geckos on virtually any type of surface via their foot pads have inspired us to develop a thermal device with numerous arrangements of a multi-layer thin film together with electrodes that can help modify the temperature of the surface via application of a voltage. A sequential fabrication process was employed on a large-scale integration to generate well-defined contact hole arrays of photoresist for use as templates on the electrode-based device. The photoresist templates were then subjected to sputter deposition of the metallic glass Zr 55 Cu 30 Al 10 Ni 5 . Consequently, a metallic glass nanotube (MGNT) array having a nominal wall thickness of 100 nm was obtained after removal of the photoresist template. When a water droplet was placed on the MGNT array, close nanochambers of metallic glass were formed. By applying voltage, the surface was heated to increase the pressure inside the nanochambers; this generated an expanding force that raised the droplet; thus, the static water contact angle (SWCA) was increased. In contrast, a sucking force was generated during surface cooling, which decreased the SWCA. Our fabrication strategy exploits the MGNT array surface as nanosuckers, which can mimic the climbing aptitude of geckos as they attach to (>10 N m -2 ) and detach from (0.26 N m -2 ) surfaces at 0.5 and 3 V of applied voltage, respectively. Thus, the climbing aptitude of geckos can be mimicked by employing the processing strategy presented herein for the development of artificial foot pads.

  12. Nanoscale waveguiding methods

    Directory of Open Access Journals (Sweden)

    Wang Chia-Jean

    2007-01-01

    Full Text Available AbstractWhile 32 nm lithography technology is on the horizon for integrated circuit (IC fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

  13. Nano-Scale Interface Modification of the Co/Cu System: Metallic Surface Modifiers in the Growth of Smooth Thin Films

    International Nuclear Information System (INIS)

    Wolny-Marszalek, M.

    2007-10-01

    This review is a collection of twelve original papers concerning growth and interface modification in the Co/Cu system. Most of this research has been carried out in the Laboratory of Surface and Thin Film Physics at the Institute of Nuclear Physics. The Laboratory was created by the author of this review in 1996 in strong collaboration with the Institute of Nuclear Physics Wilhelms-Universitaet in Muenster, Germany and the Institute of Applied Physics Ukrainian Academy of Science in Sumy, Ukraine. The big international team worked under the leadership of Dr Marta Marszalek, initially developing a multicomponent ultrahigh vacuum setup for thin film preparation and analysis, and next accompanying her in studies of the structural, magnetic and magnetotransport properties of Co/Cu multilayers. Systems that exhibit giant magnetoresistance effect have been receiving intensive attentions over recent years since they are possible candidates for applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this research is the growth of magnetic Co/Cu multilayers modified by using metallic surface modifiers called surfactants. The different approaches have been used. Surfactant metals were introduced once into growth process as a buffer layer or they were deposited sequentially at each interface of Co/Cu multilayers. The growth was performed by molecular beam epitaxy technique which allows to tailor carefully deposition conditions. The results showed that two approaches gave different results. Surfactant buffer layers resulted in loss of layered character of multilayers being a kind of an intermediate cluster-like phase combined with a layered area. Small amount of surfactants introduced at each interface lead to well-ordered structures with small roughness and smoother interfaces than in the case of pure Co/Cu multilayers. Despite of the differences, in both cases the improvement of magnetoresistance value was observed. The atomic scale study

  14. Nano-Scale Interface Modification of the Co/Cu System: Metallic Surface Modifiers in the Growth of Smooth Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Wolny-Marszalek, M [The Henryk Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 152 Radzikowskiego str., 31-342, Cracow (Poland)

    2007-10-15

    This review is a collection of twelve original papers concerning growth and interface modification in the Co/Cu system. Most of this research has been carried out in the Laboratory of Surface and Thin Film Physics at the Institute of Nuclear Physics. The Laboratory was created by the author of this review in 1996 in strong collaboration with the Institute of Nuclear Physics Wilhelms-Universitaet in Muenster, Germany and the Institute of Applied Physics Ukrainian Academy of Science in Sumy, Ukraine. The big international team worked under the leadership of Dr Marta Marszalek, initially developing a multicomponent ultrahigh vacuum setup for thin film preparation and analysis, and next accompanying her in studies of the structural, magnetic and magnetotransport properties of Co/Cu multilayers. Systems that exhibit giant magnetoresistance effect have been receiving intensive attentions over recent years since they are possible candidates for applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this research is the growth of magnetic Co/Cu multilayers modified by using metallic surface modifiers called surfactants. The different approaches have been used. Surfactant metals were introduced once into growth process as a buffer layer or they were deposited sequentially at each interface of Co/Cu multilayers. The growth was performed by molecular beam epitaxy technique which allows to tailor carefully deposition conditions. The results showed that two approaches gave different results. Surfactant buffer layers resulted in loss of layered character of multilayers being a kind of an intermediate cluster-like phase combined with a layered area. Small amount of surfactants introduced at each interface lead to well-ordered structures with small roughness and smoother interfaces than in the case of pure Co/Cu multilayers. Despite of the differences, in both cases the improvement of magnetoresistance value was observed. The atomic scale study

  15. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    DEFF Research Database (Denmark)

    Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

    2018-01-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

  16. Selective nanoscale growth of lattice mismatched materials

    Science.gov (United States)

    Lee, Seung-Chang; Brueck, Steven R. J.

    2017-06-20

    Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

  17. Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

    Science.gov (United States)

    Blomfield, Christopher James

    Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

  18. Personal medical electronic devices and walk-through metal detector security systems: assessing electromagnetic interference effects.

    Science.gov (United States)

    Guag, Joshua; Addissie, Bisrat; Witters, Donald

    2017-03-20

    There have been concerns that Electromagnetic security systems such as walk-through metal detectors (WTMDs) can potentially cause electromagnetic interference (EMI) in certain active medical devices including implantable cardiac pacemakers and implantable neurostimulators. Incidents of EMI between WTMDs and active medical devices also known as personal medical electronic devices (PMED) continue to be reported. This paper reports on emission measurements of sample WTMDs and testing of 20 PMEDs in a WTMD simulation system. Magnetic fields from sample WTMD systems were characterized for emissions and exposure of certain PMEDs. A WTMD simulator system designed and evaluated by FDA in previous studies was used to mimic the PMED exposures to the waveform from sample WTMDs. The simulation system allows for controlled PMED exposure enabling careful study with adjustable magnetic field strengths and exposure duration, and provides flexibility for PMED exposure at elevated levels in order to study EMI effects on the PMED. The PMED samples consisted of six implantable cardiac pacemakers, six implantable cardioverter defibrillators (ICD), five implantable neurostimulators, and three insulin pumps. Each PMED was exposed in the simulator to the sample WTMD waveforms using methods based on appropriate consensus test standards for each of the device type. Testing the sample PMEDs using the WTMD simulator revealed EMI effects on two implantable pacemakers and one implantable neurostimulator for exposure field strength comparable to actual WTMD field strength. The observed effects were transient and the PMEDs returned to pre-exposure operation within a few seconds after removal from the simulated WTMD exposure fields. No EMI was observed for the sample ICDs or insulin pumps. The findings are consistent with earlier studies where certain sample PMEDs exhibited EMI effects. Clinical implications were not addressed in this study. Additional studies are needed to evaluate potential PMED

  19. Nanoscale effects in interdiffusion

    International Nuclear Information System (INIS)

    Erdelyi, Z.; Langer, G.A.; Beke, D.L.; Csik, A.

    2007-01-01

    composition profile develops highly asymmetrically but also the stress profile. Moreover, we have also seen that the stress effects usually slow down the intermixing process, and the slowing down is more pronounced in case of asymmetric diffusion. Computer simulations also have shown that on the nanoscale, for strongly composition dependent diffusion coefficients, diffuse interfaces can sharpen rather broaden in completely miscible binary systems during annealing independently of the different kind of stress effects considered. The stress effects influence only the timescale of the process. This phenomenon could provide a useful tool for the improvement of interfaces and offer a way to fabricate of e.g. better Xray or neutron mirrors, microelectronic devices or multilayers with giant magnetic resistance. These phenomena predicted by computer simulations have been proved experimentally as well

  20. Method for measuring particulate and gaseous metals in a fluid stream, device for measuring particulate and gaseous metals in a fluid stream

    Science.gov (United States)

    Farber, Paul S.; Huang, Hann-Shen

    2001-01-01

    A method for analyzing metal in a fluid is provided comprising maintaining a first portion of a continuous filter media substrate at a temperature coinciding with the phase in which the metal is to be analyzed; contacting the fluid to a first portion of said substrate to retain the metal on the first portion of said substrate; preventing further contact of the fluid to the first portion of substrate; and contacting the fluid to a second portion of said substrate to retain metal on the second portion of the said substrate while simultaneously analyzing the first portion for metal. Also provided is a device for the simultaneous monitoring and analysis of metal in a fluid comprising a continuous filter media substrate; means for maintaining a first portion of said filter media substrate at a temperature coinciding with the phase in which the metal is to be analyzed; a means for contacting the fluid to the first portion of said substrate; a means for preventing further contact of the fluid to the first portion of substrate; a means for contacting the fluid to a second portion of said substrate to retain metal on the second portion of the said substrate; and means for analyzing the first portion for metal.

  1. Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization

    International Nuclear Information System (INIS)

    Guillorn, Michael A.; Carr, Dustin W.; Tiberio, Richard C.; Greenbaum, Elias; Simpson, Michael L.

    2000-01-01

    We report a versatile process for the fabrication of dissimilar metal electrodes with a minimum interelectrode distance of less than 6 nm using electron beam lithography and liftoff pattern transfer. This technique provides a controllable and reproducible method for creating structures suited for the electrical characterization of asymmetric molecules for molecular electronics applications. Electrode structures employing pairs of Au electrodes and non-Au electrodes were fabricated in three different patterns. Parallel electrode structures 300 μm long with interelectrode distances as low as 10 nm, 75 nm wide electrode pairs with interelectrode distances less than 6 nm, and a multiterminal electrode structure with reproducible interelectrode distances of 8 nm were realized using this technique. The processing issues associated with the fabrication of these structures are discussed along with the intended application of these devices. (c) 2000 American Vacuum Society

  2. Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

    International Nuclear Information System (INIS)

    Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

    2010-01-01

    A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

  3. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu

    2013-05-20

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.

  4. Metallic Contaminant Detection using a High-Temperature Superconducting Quantum Interference Devices Gradiometer

    International Nuclear Information System (INIS)

    Tanaka, Saburo; Akai, Tomohiro; Takemoto, Makoto; Hatsukade, Yoshimi; Ohtani, Takeyoshi; Ikeda, Yoshio; Suzuki, Shuichi

    2010-01-01

    We develop magnetic metallic contaminant detectors using high-temperature superconducting quantum interference devices (HTS-SQUIDs) for industrial products. Finding ultra-small metallic contaminants is an important issue for manufacturers producing commercial products such as lithium ion batteries. If such contaminants cause damages, the manufacturer of the product suffers a big financial loss due to having to recall the faulty products. Previously, we described a system for finding such ultra-small particles in food. In this study, we describe further developments of the system, for the reduction of the effect of the remnant field of the products, and we test the parallel magnetization of the products to generate the remnant field only at both ends of the products. In addition, we use an SQUID gradiometer in place of the magnetometer to reduce the edge effect by measuring the magnetic field gradient. We test the performances of the system and find that tiny iron particles as small as 50 × 50 μm 2 on the electrode of a lithium ion battery could be clearly detected. This detection level is difficult to achieve when using other methods. (cross-disciplinary physics and related areas of science and technology)

  5. Tunable color parallel tandem organic light emitting devices with carbon nanotube and metallic sheet interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, Jorge; Desirena, Haggeo; De la Rosa, Elder [Centro de Investigaciones en Optica, A.P. 1-948, León, Guanajuato 37160 (Mexico); Papadimitratos, Alexios [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Zakhidov, Anvar A., E-mail: Zakhidov@utdallas.edu [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Energy Efficiency Center, National University of Science and Technology, MISiS, Moscow 119049 (Russian Federation)

    2015-11-21

    Parallel tandem organic light emitting devices (OLEDs) were fabricated with transparent multiwall carbon nanotube sheets (MWCNT) and thin metal films (Al, Ag) as interlayers. In parallel monolithic tandem architecture, the MWCNT (or metallic films) interlayers are an active electrode which injects similar charges into subunits. In the case of parallel tandems with common anode (C.A.) of this study, holes are injected into top and bottom subunits from the common interlayer electrode; whereas in the configuration of common cathode (C.C.), electrons are injected into the top and bottom subunits. Both subunits of the tandem can thus be monolithically connected functionally in an active structure in which each subunit can be electrically addressed separately. Our tandem OLEDs have a polymer as emitter in the bottom subunit and a small molecule emitter in the top subunit. We also compared the performance of the parallel tandem with that of in series and the additional advantages of the parallel architecture over the in-series were: tunable chromaticity, lower voltage operation, and higher brightness. Finally, we demonstrate that processing of the MWCNT sheets as a common anode in parallel tandems is an easy and low cost process, since their integration as electrodes in OLEDs is achieved by simple dry lamination process.

  6. Oscillatory vapour shielding of liquid metal walls in nuclear fusion devices.

    Science.gov (United States)

    van Eden, G G; Kvon, V; van de Sanden, M C M; Morgan, T W

    2017-08-04

    Providing an efficacious plasma facing surface between the extreme plasma heat exhaust and the structural materials of nuclear fusion devices is a major challenge on the road to electricity production by fusion power plants. The performance of solid plasma facing surfaces may become critically reduced over time due to progressing damage accumulation. Liquid metals, however, are now gaining interest in solving the challenge of extreme heat flux hitting the reactor walls. A key advantage of liquid metals is the use of vapour shielding to reduce the plasma exhaust. Here we demonstrate that this phenomenon is oscillatory by nature. The dynamics of a Sn vapour cloud are investigated by exposing liquid Sn targets to H and He plasmas at heat fluxes greater than 5 MW m -2 . The observations indicate the presence of a dynamic equilibrium between the plasma and liquid target ruled by recombinatory processes in the plasma, leading to an approximately stable surface temperature.Vapour shielding is one of the interesting mechanisms for reducing the heat load to plasma facing components in fusion reactors. Here the authors report on the observation of a dynamic equilibrium between the plasma and the divertor liquid Sn surface leading to an overall stable surface temperature.

  7. Nanoscale thermal transport: Theoretical method and application

    Science.gov (United States)

    Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

    2018-03-01

    With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

  8. Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

    International Nuclear Information System (INIS)

    Deng, Yan-Hong; Chen, Xiang-Yu; Ou, Qing-Dong; Wang, Qian-Kun; Jiang, Xiao-Cheng; Zhang, Dan-Dan; Li, Yan-Qing

    2014-01-01

    The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq 3 /MoO 3 and MoO 3 composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO 3 layer. Moreover, Mg:Alq 3 /MoO 3 composed device displays a photovoltaic effect and the V oc shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

  9. The Fundamental Role of Nano-Scale Oxide Films in the Oxidation of Hydrogen and the Reduction of Oxygen on Noble Metal Electrocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Digby Macdonald

    2005-04-15

    The derivation of successful fuel cell technologies requires the development of more effective, cheaper, and poison-resistant electrocatalysts for both the anode (H{sub 2} oxidation in the presence of small amounts of CO from the reforming of carbonaceous fuels) and the cathode (reduction of oxygen in the presence of carried-over fuel). The proposed work is tightly focused on one specific aspect of electrocatalysis; the fundamental role(s) played by nanoscale (1-2 nm thick) oxide (''passive'') films that form on the electrocatalyst surfaces above substrate-dependent, critical potentials, on charge transfer reactions, particularly at elevated temperatures (25 C < T < 200 C). Once the role(s) of these films is (are) adequately understood, we will then use this information to specify, at the molecular level, optimal properties of the passive layer for the efficient electrocatalysis of the oxygen reduction reaction.

  10. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  11. Nanoscale hotspots due to nonequilibrium thermal transport

    International Nuclear Information System (INIS)

    Sinha, Sanjiv; Goodson, Kenneth E.

    2004-01-01

    Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of the additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal

  12. Nanoscale Ionic Liquids

    Science.gov (United States)

    2006-11-01

    Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

  13. Coupled modeling of the competitive gettering of transition metals and impact on performance of lifetime sensitive devices

    Science.gov (United States)

    Yazdani, Armin; Chen, Renyu; Dunham, Scott T.

    2017-03-01

    This work models competitive gettering of metals (Cu, Ni, Fe, Mo, and W) by boron, phosphorus, and dislocation loops, and connects those results directly to device performance. Density functional theory calculations were first performed to determine the binding energies of metals to the gettering sites, and based on that, continuum models were developed to model the redistribution and trapping of the metals. Our models found that Fe is most strongly trapped by the dislocation loops while Cu and Ni are most strongly trapped by the P4V clusters formed in high phosphorus concentrations. In addition, it is found that none of the mentioned gettering sites are effective in gettering Mo and W. The calculated metal redistribution along with the associated capture cross sections and trap energy levels are passed to device simulation via the recombination models to calculate carrier lifetime and the resulting device performance. Thereby, a comprehensive and predictive TCAD framework is developed to optimize the processing conditions to maximize performance of lifetime sensitive devices.

  14. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    International Nuclear Information System (INIS)

    Ngai, K.L.; Hsia, Y.

    1982-01-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

  15. The role of bone SPECT/CT in the evaluation of lumbar spinal fusion with metallic fixation devices

    DEFF Research Database (Denmark)

    Damgaard, Morten; Nimb, Lars; Madsen, Jan L

    2010-01-01

    PURPOSE: It is difficult to evaluate the stability of the lumbar spondylodesis with metallic fixation devices by conventional imaging methods such as radiography or magnetic resonance imaging. It is unknown whether single photon emission computed tomography/computed tomography (SPECT/CT) may be u...

  16. Mechanical devices for aligning optical fibers using elastic metal-deformation techniques

    NARCIS (Netherlands)

    van Zantvoort, J.H.C.; Plukker, S.G.L.; Kuindersma, P.I.; Mekonnen, K.A.; de Waardt, H.

    2016-01-01

    We designed and realized two different mechanical devices for aligning standard lensed telecom fibers to indium-phosphide-based photonic integrated circuits (PICs). The first device (Device A) can align one fiber in three degrees of freedom, while the second device (Device B) can align two fiber

  17. Channel length scaling and the impact of metal gate work function ...

    Indian Academy of Sciences (India)

    Further- more, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson–Schrödinger solver in two dimensions over the entire device. A good agreement with ...

  18. A carbon-metal brazing for divertor plates in fusion devices

    International Nuclear Information System (INIS)

    Matsuda, T.; Matsumoto, T.; Miki, S.; Sogabe, T.; Okada, M.; Kubota, Y.; Sagara, A.; Noda, N.; Motojima, O.; Hino, T.; Yamashina, T.

    1993-01-01

    A divertor unit, which consists of carbon armors brazed to a copper cooling channel, is under development for fusion devices. Isotropic graphite (IG-430U) and CFC (CX-2002U) are used for the armor, and a copper for the cooling tube. A technique named as dissolution and deposit of base metal was employed for brazing. The reliability of the brazed components was evaluated both by 4-point bending test and thermal shock test. According to the results of a 4-point bending test under the temperature ranged from RT to 800 C in a vacuum, it was found that the strength of the brazed surface at RT was maintained up to the higher temperature, 600 C. High heat load test has been also performed on the brazed sample in order to find whether the samples meet the requirement of the divertor plates of LHD (Large Helical Device). Active Cooling Teststand (ACT:NIFS) with electron beam power of 100kW was used. In LHD, it is presumed that the maximum heat flux is 10MW/m 2 . In addition, the surface temperature of divertor has to be kept below 1,200 C to avoid RES, by active cooling. The heat load test showed that the brazing components of CX-2002U (flat plate type CFC-Cu brazed) was stable at 1,300 C under a heat flux of 10MW/m 2 , when the flow velocity of cooling water was 6m/s. No damage nor deterioration was found at the brazed zone after the heat load test

  19. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    KAUST Repository

    Almuslem, A. S.

    2017-02-14

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  20. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

    Science.gov (United States)

    Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

    2018-03-01

    Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

  1. Nanoscale orientation and lateral organization of chimeric metal-binding green fluorescent protein on lipid membrane determined by epifluorescence and atomic force microscopy

    International Nuclear Information System (INIS)

    Prachayasittikul, Virapong; Isarankura Na Ayudhya, Chartchalerm; Tantimongcolwat, Tanawut; Galla, Hans-Joachim

    2005-01-01

    Epifluorescence microscopy as well as atomic force microscopy was successfully applied to explore the orientation and lateral organization of a group of chimeric green fluorescent proteins (GFPs) on lipid membrane. Incorporation of the chimeric GFP carrying Cd-binding region (His6CdBP4GFP) to the fluid phase of DPPC monolayer resulted in a strong fluorescence intensity at the air-water interface. Meanwhile, non-specific adsorption of the GFP having hexahistidine (His6GFP) led to the perturbation of the protein structure in which very low fluorescence was observed. Specific binding of both of the chimeric GFPs to immobilized zinc ions underneath the metal-chelating lipid membrane was revealed. This specific binding could be reversibly controlled by addition of metal ions or metal chelator. Binding of the chimeric GFPs to the metal-chelating lipid membrane was proven to be the end-on orientation while the side-on adsorption was contrarily noted in the absence of metal ions. Increase of lateral mobility owing to the fluidization effect on the chelating lipid membrane subsequently facilitated crystal formation. All these findings have opened up a potential approach for a specific orientation of immobilization of protein at the membrane interface. This could have accounted for a better opportunity of sensor development

  2. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  3. Some metal oxides and their applications for creation of Microsystems (MEMS) and Energy Harvesting Devices (EHD)

    International Nuclear Information System (INIS)

    Denishev, K

    2016-01-01

    This is a review of a part of the work of the Technological Design Group at Technical University of Sofia, Faculty of Electronic Engineering and Technologies, Department of Microelectronics. It is dealing with piezoelectric polymer materials and their application in different microsystems (MEMS) and Energy Harvesting Devices (EHD), some organic materials and their applications in organic (OLED) displays, some transparent conductive materials etc. The metal oxides Lead Zirconium Titanate (PZT) and Zinc Oxide (ZnO) are used as piezoelectric layers - driving part of different sensors, actuators and EHD. These materials are studied in term of their performance in dependence on the deposition conditions and parameters. They were deposited as thin films by using RF Sputtering System. As technological substrates, glass plates and Polyethylenetherephtalate (PET) foils were used. For characterization of the materials, a test structure, based on Surface Acoustic Waves (SAW), was designed and prepared. The layers were characterized by Fourier Transform Infrared spectroscopy (FTIR). The piezoelectric response was tested at variety of mechanical loads (tensile strain, stress) in static and dynamic (multiple bending) mode. The single-layered and double-layered structures were prepared for piezoelectric efficiency increase. A structure of piezoelectric energy transformer is proposed and investigated. (paper)

  4. An Ionic-Polymer-Metallic Composite Actuator for Reconfigurable Antennas in Mobile Devices

    Directory of Open Access Journals (Sweden)

    Yi-Chen Lin

    2014-01-01

    Full Text Available In this paper, a new application of an electro-active-polymer for a radio frequency (RF switch is presented. We used an ionic polymer metallic composite (IPMC switch to change the operating frequency of an inverted-F antenna. This switch is light in weight, small in volume, and low in cost. In addition, the IPMC is suitable for mobile devices because of its driving voltage of 3 volts and thickness of 200 μm. The IPMC acts as a normally-on switch to control the operating frequency of a reconfigurable antenna in mobile phones. We experimentally demonstrated by network analysis that the IPMC switch could shift its operating frequency from 1.1 to 2.1 GHz, with return losses of than −10 dB at both frequencies. To minimize electrolysis and maximize the operation time in air, propylene carbonate electrolyte with lithium perchlorate (LiClO4 was applied inside the IPMC. The results showed that when the IPMC was actuated over three months at 3.5 V, the tip displacement fell by less than 10%. Therefore, an IPMC actuator is a promising choice for application to a reconfigurable antenna.

  5. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Science.gov (United States)

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-01-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

  6. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Science.gov (United States)

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-07-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

  7. Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Masatoshi; Okabe, Kyota [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Kimura, Takashi [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2016-01-11

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

  8. Human health and ecological toxicity potentials due to heavy metal content in waste electronic devices with flat panel displays

    International Nuclear Information System (INIS)

    Lim, Seong-Rin; Schoenung, Julie M.

    2010-01-01

    Display devices such as cathode-ray tube (CRT) televisions and computer monitors are known to contain toxic substances and have consequently been banned from disposal in landfills in the State of California and elsewhere. New types of flat panel display (FPD) devices, millions of which are now purchased each year, also contain toxic substances, but have not previously been systematically studied and compared to assess the potential impact that could result from their ultimate disposal. In the current work, the focus is on the evaluation of end-of-life toxicity potential from the heavy metal content in select FPD devices with the intent to inform material selection and design-for-environment (DfE) decisions. Specifically, the metals antimony, arsenic, barium, beryllium, cadmium, chromium, cobalt, copper, lead, mercury, molybdenum, nickel, selenium, silver, vanadium, and zinc in plasma TVs, LCD (liquid crystal display) TVs, LCD computer monitors and laptop computers are considered. The human health and ecotoxicity potentials are evaluated through a life cycle assessment perspective by combining data on the respective heavy metal contents, the characterization factors in the U.S. EPA Tool for the Reduction and Assessment of Chemical and other environmental Impacts (TRACI), and a pathway and impact model. Principal contributors to the toxicity potentials are lead, arsenic, copper, and mercury. Although the heavy metal content in newer flat panel display devices creates less human health toxicity potential than that in CRTs, for ecological toxicity, the new devices are worse, especially because of the mercury in LCD TVs and the copper in plasma TVs.

  9. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

    Science.gov (United States)

    Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

    2012-07-01

    In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

  10. Nanoscale cryptography: opportunities and challenges.

    Science.gov (United States)

    Masoumi, Massoud; Shi, Weidong; Xu, Lei

    2015-01-01

    While most of the electronics industry is dependent on the ever-decreasing size of lithographic transistors, this scaling cannot continue indefinitely. To improve the performance of the integrated circuits, new emerging and paradigms are needed. In recent years, nanoelectronics has become one of the most important and exciting forefront in science and engineering. It shows a great promise for providing us in the near future with many breakthroughs that change the direction of technological advances in a wide range of applications. In this paper, we discuss the contribution that nanotechnology may offer to the evolution of cryptographic hardware and embedded systems and demonstrate how nanoscale devices can be used for constructing security primitives. Using a custom set of design automation tools, it is demonstrated that relative to a conventional 45-nm CMOS system, performance gains can be obtained up to two orders of magnitude reduction in area and up to 50 % improvement in speed.

  11. The role of bone SPECT/CT in the evaluation of lumbar spinal fusion with metallic fixation devices

    DEFF Research Database (Denmark)

    Damgaard, Morten; Nimb, Lars; Madsen, Jan L

    2010-01-01

    PURPOSE: It is difficult to evaluate the stability of the lumbar spondylodesis with metallic fixation devices by conventional imaging methods such as radiography or magnetic resonance imaging. It is unknown whether single photon emission computed tomography/computed tomography (SPECT/CT) may......, whereas in 1 case loose pedicle screws were detected at a wrong vertebral level. CONCLUSION: SPECT/CT may be useful to detect a lack of fixation of the metallic implants, and hence instability of the spondylodesis by evaluating the focal bone mineralization activity in relation to the pedicle screws....

  12. Device of connecting the metal sheet lining a concrete enclosure to a pipe opening inside the enclosure

    International Nuclear Information System (INIS)

    Petit, Guy.

    1975-01-01

    Said invention relates to a sealed device connecting a metal sheet anchored on the internal side of a concrete vessel containing a hot pressurized fluid, with a metallic pipe opening inside said vessel. It is intended for heat insulating structures so-called 'hot skin' used for the pressure vessels of some boiling water reactors. Said invention is intended for different types of said pipe such as: the penetrations for the inlets and outlets of the primary circuit, or anchoring cylindrical sheaths used as supports of components or other elements located inside said pressure vessel [fr

  13. High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

    Science.gov (United States)

    Levin, Andrey V.

    1996-04-01

    High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

  14. Infochemistry Information Processing at the Nanoscale

    CERN Document Server

    Szacilowski, Konrad

    2012-01-01

    Infochemistry: Information Processing at the Nanoscale, defines a new field of science, and describes the processes, systems and devices at the interface between chemistry and information sciences. The book is devoted to the application of molecular species and nanostructures to advanced information processing. It includes the design and synthesis of suitable materials and nanostructures, their characterization, and finally applications of molecular species and nanostructures for information storage and processing purposes. Divided into twelve chapters; the first three chapters serve as an int

  15. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  16. Atomistic materials modeling of complex systems: Carbynes, carbon nanotube devices and bulk metallic glasses

    Science.gov (United States)

    Luo, Weiqi

    The key to understanding and predicting the behavior of materials is the knowledge of their structures. Many properties of materials samples are not solely determined by their average chemical compositions which one may easily control. Instead, they are profoundly influenced by structural features of different characteristic length scales. Starting in the last century, metallurgical engineering has mostly been microstructure engineering. With the further evolution of materials science, structural features of smaller length scales down to the atomic structure, have become of interest for the purpose of properties engineering and functionalizing materials and are, therefore, subjected to study. As computer modeling is becoming more powerful due to the dramatic increase of computational resources and software over the recent decades, there is an increasing demand for atomistic simulations with the goal of better understanding materials behavior on the atomic scale. Density functional theory (DFT) is a quantum mechanics based approach to calculate electron distribution, total energy and interatomic forces with high accuracy. From these, atomic structures and thermal effects can be predicted. However, DFT is mostly applied to relatively simple systems because it is computationally very demanding. In this thesis, the current limits of DFT applications are explored by studying relatively complex systems, namely, carbynes, carbon nanotube (CNT) devices and bulk metallic glasses (BMGs). Special care is taken to overcome the limitations set by small system sizes and time scales that often prohibit DFT from being applied to realistic systems under realistic external conditions. In the first study, we examine the possible existence of a third solid phase of carbon with linear bonding called carbyne, which has been suggested in the literature and whose formation has been suggested to be detrimental to high-temperature carbon materials. We have suggested potential structures for

  17. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  18. Nanopatterning and nanoscale devices for biological applications

    CERN Document Server

    Šelimović, Seila

    2014-01-01

    ""This book is a good reference for researchers interested in realizing bio-applications based on micro- and nanostructures, where their interface with liquids and biomolecules is the key point. The most important 'players' of micro- and nano-bioengineering are considered, from DNA to proteins and cells. The work is a good merger of basic concepts and real examples of applications.""-Danilo Demarchi, Politecnico di Torino, Italy

  19. Photonic crystals: towards nanoscale photonic devices

    National Research Council Canada - National Science Library

    Lourtioz, J.-M

    2005-01-01

    .... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

  20. Towards Nanoscale Biomedical Devices in Medicine

    DEFF Research Database (Denmark)

    Parracino, A.; Gajula, G.P.; di Gennaro, A.K.

    2011-01-01

    of ubiquitous enzymes which play a key role in formaldehyde detoxification both in prokaryotes and eukaryotes. PhEst was originally annotated as a putative feruloyl esterase, an enzyme that releases ferulic acid (an antioxidant reactive towards free radicals such as reactive oxygen species) from polysaccharides...

  1. A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2018-06-01

    Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

  2. Enhanced nanoscale friction on fluorinated graphene.

    Science.gov (United States)

    Kwon, Sangku; Ko, Jae-Hyeon; Jeon, Ki-Joon; Kim, Yong-Hyun; Park, Jeong Young

    2012-12-12

    Atomically thin graphene is an ideal model system for studying nanoscale friction due to its intrinsic two-dimensional (2D) anisotropy. Furthermore, modulating its tribological properties could be an important milestone for graphene-based micro- and nanomechanical devices. Here, we report unexpectedly enhanced nanoscale friction on chemically modified graphene and a relevant theoretical analysis associated with flexural phonons. Ultrahigh vacuum friction force microscopy measurements show that nanoscale friction on the graphene surface increases by a factor of 6 after fluorination of the surface, while the adhesion force is slightly reduced. Density functional theory calculations show that the out-of-plane bending stiffness of graphene increases up to 4-fold after fluorination. Thus, the less compliant F-graphene exhibits more friction. This indicates that the mechanics of tip-to-graphene nanoscale friction would be characteristically different from that of conventional solid-on-solid contact and would be dominated by the out-of-plane bending stiffness of the chemically modified graphene. We propose that damping via flexural phonons could be a main source for frictional energy dissipation in 2D systems such as graphene.

  3. Neuromorphic computing with nanoscale spintronic oscillators.

    Science.gov (United States)

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

    2017-07-26

    Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

  4. Electrical Control of Metallic Heavy-Metal-Ferromagnet Interfacial States

    Science.gov (United States)

    Bi, Chong; Sun, Congli; Xu, Meng; Newhouse-Illige, Ty; Voyles, Paul M.; Wang, Weigang

    2017-09-01

    Voltage-control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here, we demonstrate that metallic systems can also be controlled electrically through ionic rather than electronic effects. In a Pt /Co structure, the control of the metallic Pt /Co interface can lead to unprecedented control effects on the magnetic properties of the entire structure. Consequently, the magnetization and perpendicular magnetic anisotropy of the Co layer can be independently manipulated to any desired state, the efficient spin toques can be enhanced about 3.5 times, and the switching current can be reduced about one order of magnitude. This ability to control a metallic system may be extended to control other physical phenomena.

  5. Use of fluorescent-metal intensifying screens with RT-type films for X-ray radiography using pulse devices

    International Nuclear Information System (INIS)

    Morgovskij, L.Ya.; Khakim'yanov, R.R.

    1985-01-01

    A study was made on characteristics of combination of fluorescent-metal Kyokko SMP-308 (Japan) and RCF (Agfa-Gevert) screens with domestic X-ray RT-1, RT-2, RT-5 films. Pulse X-ray MIRA-3D and NORA devices at 200 kV voltage amplitude in X-ray tube were used as radiation source. Testing was conducted for steel samples of 5-40 mm thickness. Comparative exposures for various film combinations with fluorescent-metal screens, fluorescent VP-2 screens and lead foils of 27 μm thickness were determined at that. It is shown that fluorescent-metal screens can be successfully applied with domestic X-ray technical films. They enable to decrease exposure by one order with insignificant deterioration of sensitivity. It is important for testing of pipeline welds

  6. Pulsed-voltage atom probe tomography of low conductivity and insulator materials by application of ultrathin metallic coating on nanoscale specimen geometry.

    Science.gov (United States)

    Adineh, Vahid R; Marceau, Ross K W; Chen, Yu; Si, Kae J; Velkov, Tony; Cheng, Wenlong; Li, Jian; Fu, Jing

    2017-10-01

    We present a novel approach for analysis of low-conductivity and insulating materials with conventional pulsed-voltage atom probe tomography (APT), by incorporating an ultrathin metallic coating on focused ion beam prepared needle-shaped specimens. Finite element electrostatic simulations of coated atom probe specimens were performed, which suggest remarkable improvement in uniform voltage distribution and subsequent field evaporation of the insulated samples with a metallic coating of approximately 10nm thickness. Using design of experiment technique, an experimental investigation was performed to study physical vapor deposition coating of needle specimens with end tip radii less than 100nm. The final geometries of the coated APT specimens were characterized with high-resolution scanning electron microscopy and transmission electron microscopy, and an empirical model was proposed to determine the optimal coating thickness for a given specimen size. The optimal coating strategy was applied to APT specimens of resin embedded Au nanospheres. Results demonstrate that the optimal coating strategy allows unique pulsed-voltage atom probe analysis and 3D imaging of biological and insulated samples. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Filling the gap between the quantum and classical worlds of nanoscale magnetism: giant molecular aggregates based on paramagnetic 3d metal ions.

    Science.gov (United States)

    Papatriantafyllopoulou, Constantina; Moushi, Eleni E; Christou, George; Tasiopoulos, Anastasios J

    2016-03-21

    In this review, aspects of the syntheses, structures and magnetic properties of giant 3d and 3d/4f paramagnetic metal clusters in moderate oxidation states are discussed. The term "giant clusters" is used herein to denote metal clusters with nuclearity of 30 or greater. Many synthetic strategies towards such species have been developed and are discussed in this paper. Attempts are made to categorize some of the most successful methods to giant clusters, but it will be pointed out that the characteristics of the crystal structures of such compounds including nuclearity, shape, architecture, etc. are unpredictable depending on the specific structural features of the included organic ligands, reaction conditions and other factors. The majority of the described compounds in this review are of special interest not only for their fascinating nanosized structures but also because they sometimes display interesting magnetic phenomena, such as ferromagnetic exchange interactions, large ground state spin values, single-molecule magnetism behaviour or impressively large magnetocaloric effects. In addition, they often possess the properties of both the quantum and the classical world, and thus their systematic study offers the potential for the discovery of new physical phenomena, as well as a better understanding of the existing ones. The research field of giant clusters is under continuous evolution and their intriguing structural characteristics and magnetism properties that attract the interest of synthetic Inorganic Chemists promise a brilliant future for this class of compounds.

  8. Enhanced photoelectrochemical activity in all-oxide heterojunction devices based on correlated "metallic" oxides.

    Science.gov (United States)

    Apgar, Brent A; Lee, Sungki; Schroeder, Lauren E; Martin, Lane W

    2013-11-20

    n-n Schottky, n-n ohmic, and p-n Schottky heterojunctions based on TiO2 /correlated "metallic" oxide couples exhibit strong solar-light absorption driven by the unique electronic structure of the "metallic" oxides. Photovoltaic and photocatalytic responses are driven by hot electron injection from the "metallic" oxide into the TiO2 , enabling new modalities of operation for energy systems. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Method and device for electromagnetic pumping by conduction of liquid metals having low electrical conductivity

    International Nuclear Information System (INIS)

    Le Frere, J.P.

    1976-01-01

    The invention is related to a method for pumping of liquid metals having a low electrical conductivity. To lower the resistance of the conductive spire containing liquid metal to be pumped, a tape formed by a conductive metal such as copper or nickel is inserted in that spire. The tape is interrupted at the level of the air gap of the main magnetic circuit at least when the conductive spire passes through that air gap

  10. Static electric field enhancement in nanoscale structures

    Energy Technology Data Exchange (ETDEWEB)

    Lepetit, Bruno, E-mail: bruno.lepetit@irsamc.ups-tlse.fr; Lemoine, Didier, E-mail: didier.lemoine@irsamc.ups-tlse.fr [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Márquez-Mijares, Maykel, E-mail: mmarquez@instec.cu [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Instituto Superior de Tecnologías y Ciencias Aplicadas, Avenida Salvador Allende 1110, Quinta de los Molinos, La Habana (Cuba)

    2016-08-28

    We study the effect of local atomic- and nano-scale protrusions on field emission and, in particular, on the local field enhancement which plays a key role as known from the Fowler-Nordheim model of electronic emission. We study atomic size defects which consist of right angle steps forming an infinite length staircase on a tungsten surface. This structure is embedded in a 1 GV/m ambient electrostatic field. We perform calculations based upon density functional theory in order to characterize the total and induced electronic densities as well as the local electrostatic fields taking into account the detailed atomic structure of the metal. We show how the results must be processed to become comparable with those of a simple homogeneous tungsten sheet electrostatic model. We also describe an innovative procedure to extrapolate our results to nanoscale defects of larger sizes, which relies on the microscopic findings to guide, tune, and improve the homogeneous metal model, thus gaining predictive power. Furthermore, we evidence analytical power laws for the field enhancement characterization. The main physics-wise outcome of this analysis is that limited field enhancement is to be expected from atomic- and nano-scale defects.

  11. Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

    Science.gov (United States)

    Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

    2007-04-01

    Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

  12. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

    2016-04-15

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  13. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    International Nuclear Information System (INIS)

    Borgatti, F.; Torelli, P.; Panaccione, G.

    2016-01-01

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  14. Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2

    Science.gov (United States)

    Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand

    2017-11-01

    Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW → NCCDW transition.

  15. Method for removing heavy metal and nitrogen oxides from flue gas, device for removing heavy metal and nitrogen oxides from flue gas

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Hann-Sheng; Livengood, Charles David

    1997-12-01

    A method for the simultaneous removal of oxides and heavy metals from a fluid is provided comprising combining the fluid with compounds containing alkali and sulfur to create a mixture; spray drying the mixture to create a vapor phase and a solid phase; and isolating the vapor phase from the solid phase. A device is also provided comprising a means for spray-drying flue gas with alkali-sulfide containing liquor at a temperature sufficient to cause the flue gas to react with the compounds so as to create a gaseous fraction and a solid fraction and a means for directing the gaseous fraction to a fabric filter.

  16. Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing.

    Science.gov (United States)

    Rojas, Jhonathan P; Torres Sevilla, Galo A; Alfaraj, Nasir; Ghoneim, Mohamed T; Kutbee, Arwa T; Sridharan, Ashvitha; Hussain, Muhammad Mustafa

    2015-05-26

    The ability to incorporate rigid but high-performance nanoscale nonplanar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nanoscale, nonplanar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stacks, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length, exhibits an ION value of nearly 70 μA/μm (VDS = 2 V, VGS = 2 V) and a low subthreshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device's performance with insignificant deterioration even at a high bending state.

  17. Ellipsometry at the nanoscale

    CERN Document Server

    Hingerl, Kurt

    2013-01-01

    This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics...

  18. Bulk nanoscale materials in steel products

    International Nuclear Information System (INIS)

    Chehab, B; Wang, X; Masse, J-P; Zurob, H; Embury, D; Bouaziz, O

    2010-01-01

    Although a number of nanoscale metallic materials exhibit interesting mechanical properties the fabrication paths are often complex and difficult to apply to bulk structural materials. However a number of steels which exhibit combinations of plasticity and phase transitions can be deformed to produce ultra high strength levels in the range 1 to 3 GPa. The resultant high stored energy and complex microstructures allow new nanoscale structures to be produced by combinations of recovery and recrystallisation. The resultant structures exhibit totally new combinations of strength and ductility to be achieved. In specific cases this also enables both the nature of the grain boundary structure and the spatial variation in structure to be controlled. In this presentation both the detailed microstructural features and their relation to the strength, work-hardening capacity and ductility will be discussed for a number of martensitic and austenitic steels.

  19. Detection and Recovery of Palladium, Gold and Cobalt Metals from the Urban Mine Using Novel Sensors/Adsorbents Designated with Nanoscale Wagon-wheel-shaped Pores

    Science.gov (United States)

    El-Safty, Sherif A.; Shenashen, Mohamed A.; Sakai, Masaru; Elshehy, Emad; Halada, Kohmei

    2015-01-01

    Developing low-cost, efficient processes for recovering and recycling palladium, gold and cobalt metals from urban mine remains a significant challenge in industrialized countries. Here, the development of optical mesosensors/adsorbents (MSAs) for efficient recognition and selective recovery of Pd(II), Au(III), and Co(II) from urban mine was achieved. A simple, general method for preparing MSAs based on using high-order mesoporous monolithic scaffolds was described. Hierarchical cubic Ia3d wagon-wheel-shaped MSAs were fabricated by anchoring chelating agents (colorants) into three-dimensional pores and micrometric particle surfaces of the mesoporous monolithic scaffolds. Findings show, for the first time, evidence of controlled optical recognition of Pd(II), Au(III), and Co(II) ions and a highly selective system for recovery of Pd(II) ions (up to ~95%) in ores and industrial wastes. Furthermore, the controlled assessment processes described herein involve evaluation of intrinsic properties (e.g., visual signal change, long-term stability, adsorption efficiency, extraordinary sensitivity, selectivity, and reusability); thus, expensive, sophisticated instruments are not required. Results show evidence that MSAs will attract worldwide attention as a promising technological means of recovering and recycling palladium, gold and cobaltmetals. PMID:26709467

  20. Effects of structural modification on reliability of nanoscale nitride HEMTs

    Science.gov (United States)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  1. Spatial distribution of heavy metals in the surface soil of source-control stormwater infiltration devices - Inter-site comparison.

    Science.gov (United States)

    Tedoldi, Damien; Chebbo, Ghassan; Pierlot, Daniel; Branchu, Philippe; Kovacs, Yves; Gromaire, Marie-Christine

    2017-02-01

    Stormwater runoff infiltration brings about some concerns regarding its potential impact on both soil and groundwater quality; besides, the fate of contaminants in source-control devices somewhat suffers from a lack of documentation. The present study was dedicated to assessing the spatial distribution of three heavy metals (copper, lead, zinc) in the surface soil of ten small-scale infiltration facilities, along with several physical parameters (soil moisture, volatile matter, variable thickness of the upper horizon). High-resolution samplings and in-situ measurements were undertaken, followed by X-ray fluorescence analyses and spatial interpolation. Highest metal accumulation was found in a relatively narrow area near the water inflow zone, from which concentrations markedly decreased with increasing distance. Maximum enrichment ratios amounted to >20 in the most contaminated sites. Heavy metal patterns give a time-integrated vision of the non-uniform infiltration fluxes, sedimentation processes and surface flow pathways within the devices. This element indicates that the lateral extent of contamination is mainly controlled by hydraulics. The evidenced spatial structure of soil concentrations restricts the area where remediation measures would be necessary in these systems, and suggests possible optimization of their hydraulic functioning towards an easier maintenance. Heterogeneous upper boundary conditions should be taken into account when studying the fate of micropollutants in infiltration facilities with either mathematical modeling or soil coring field surveys. Copyright © 2016 Elsevier B.V. All rights reserved.

  2. Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2014-01-01

    Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

  3. Nanoscale zero-valent iron assisted phytoremediation of Pb in sediment: Impacts on metal accumulation and antioxidative system of Lolium perenne.

    Science.gov (United States)

    Huang, Danlian; Qin, Xiang; Peng, Zhiwei; Liu, Yunguo; Gong, Xiaomin; Zeng, Guangming; Huang, Chao; Cheng, Min; Xue, Wenjing; Wang, Xi; Hu, Zhengxun

    2018-05-30

    Lead (Pb) is a highly toxic environmental pollutant, and could result in toxic effects on living organisms. The effects of 0, 100, 200, 500, 1000 and 2000 mg/kg of nZVI on plant growth, Pb accumulation and antioxidative responses of Lolium perenne were investigated. Results showed that the total Pb contents in L. perenne with the treatment of low concentrations of nZVI (100, 200 and 500 mg/kg) were higher than those in the non-nZVI treatments, and the highest Pb accumulation capacity of 1175.40 μg per pot was observed in L. perenne with the treatment of 100 mg/kg nZVI. However, the total Pb contents in L. perenne decreased at high concentrations of nZVI (1000 and 2000 mg/kg). This might be resulted from the decrease of photosynthetic chlorophyll content and the aggravated oxidative stress induced by the high concentration of nZVI, which caused the decrease of plant biomass and metal accumulation capacity in plant. Moreover, the sequential extraction experiments results showed that the lowest acid soluble fraction of Pb in the sediments was found in the treatment with 100 mg/kg of nZVI, indicating that 100 mg/kg was the optimum concentration for nZVI to assist the phytoremediation of Pb-polluted sediment. To conclude, these findings provide a promising method to remediate Pb-polluted sediment by nZVI assisted phytoremediation. Copyright © 2018 Elsevier Inc. All rights reserved.

  4. Impact of scaling on the performance and reliability degradation of metal-contacts in NEMS devices

    KAUST Repository

    Dadgour, Hamed F.; Hussain, Muhammad Mustafa; Cassell, Alan M.; Singh, Navab R.; Banerjee, Kaustav

    2011-01-01

    thoroughly investigated in the literature. Such a study is essential because metal contacts play a critical role in determining the overall performance and reliability of NEMS. Therefore, the comprehensive analytical study presented in this paper highlights

  5. Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

    Science.gov (United States)

    2015-09-23

    layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

  6. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  7. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

    International Nuclear Information System (INIS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-01-01

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

  8. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  9. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  10. Half metallic ferromagnet Pr_0_._9_5Mn_0_._9_3_9O_3 for spin based devices

    International Nuclear Information System (INIS)

    Santhosh Kumar, B.; Praveen Shankar, N.; Venkateswaran, C.; Manimuthu, P.

    2016-01-01

    Half Metallic Ferromagnets (HMF) are excellent candidates for spintronics devices due to their unusual 3d and 4s bands. Band theory and first principles calculations strongly predict that Pr based compounds are promising HMF candidates due to their spin hybridisation. Among all Pr based HMF, Pr_0_._9_5Mn_0_._9_3_9O_3 is special because of its pervoskite structure. The different oxidation states of Mn and Pr will enhance the hybridisation of 3d and 4f bands. The present study is experimental effort on the preparation of Pr based compounds

  11. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    Science.gov (United States)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  12. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  13. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  14. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  15. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    International Nuclear Information System (INIS)

    Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

    2014-01-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

  16. Nanoscale thermoelectric materials

    International Nuclear Information System (INIS)

    Failamani, F.

    2015-01-01

    Thermoelectric (TE) materials directly convert thermal energy to electrical energy when subjected to a temperature gradient, whereas if electricity is applied to thermoelectric materials, a temperature gradient is formed. The performance of thermoelectric materials is characterized by a dimensionless figure of merit (ZT = S2T/ρλ), which consists of three parameters, Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (λ). To achieve good performance of thermoelectric power generation and cooling, ZT's of thermoelectric materials must be as high as possible, preferably above unity. This thesis comprises three main parts, which are distributed into six chapters: (i) nanostructuring to improve TE performance of trivalent rare earth-filled skutterudites (chapter 1 and 2), (ii) interactions of skutterudite thermolectrics with group V metals as potential electrode or diffusion barrier for TE devices (chapter 3 and 4), and (iii) search for new materials for TE application (chapter 5 and 6). Addition of secondary phases, especially nano sized phases can cause additional reduction of the thermal conductivity of a filled skutterudite which improves the figure of merit (ZT) of thermoelectric materials. In chapter 1 we investigated the effect of various types of secondary phases (silicides, borides, etc.) on the TE properties of trivalent rare earth filled Sb-based skutterudites as commercially potential TE materials. In this context the possibilty to introduce borides as nano-particles (via ball-milling in terms of a skutterudite/boride composite) is also elucidated in chapter 2. As a preliminary study, crystal structure of novel high temperature FeB-type phases found in the ternary Ta-{Ti,Zr,Hf,}-B systems were investigated. In case of Ti and Hf this phase is the high temperature stabilization of binary group IV metal monoborides, whereas single crystal study of (Ta,Zr)B proves that it is a true ternary phase as no stable monoboride exist in the

  17. A device for reduction of metal oxides generated in electrokinetic separation equipment

    International Nuclear Information System (INIS)

    Kim, Gye-Nam; Kim, Seung-Soo; Kim, Il-Gook; Jeong, Jung-Whan; Choi, Jong-Won

    2015-01-01

    For a reduction of waste electrolyte volume and metal oxide volume, the reuse period of the waste electrolyte in the electrokinetic decontamination experiment and the method of a reduction of metal oxide volume in the cathode chamber were drawn out through several experiments with the manufactured 1.2 ton electrokinetic decontamination equipment. The optimum pH of electrolyte in cathode chamber for a reduction of volume of metal oxides was below 2.35. Indoor electrokinetic decontamination equipment for treatment of 1.2 tons of the contaminated soil per batch was manufactured to remove uranium from soil with high removal efficiency during a short time. For a reduction of waste electrolyte volume and metal oxide volume, the reuse period of waste electrolyte in the electrokinetic decontamination experiment and the method of a reduction of metal oxide volume in the cathode chamber were drawn out through several experiments with the manufactured electrokinetic equipment. Indoor electrokinetic decontamination equipment for treatment of 1.2 tons of the contaminated soil was manufactured to remove uranium from soil during a short time

  18. A device for reduction of metal oxides generated in electrokinetic separation equipment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Gye-Nam; Kim, Seung-Soo; Kim, Il-Gook; Jeong, Jung-Whan; Choi, Jong-Won [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    For a reduction of waste electrolyte volume and metal oxide volume, the reuse period of the waste electrolyte in the electrokinetic decontamination experiment and the method of a reduction of metal oxide volume in the cathode chamber were drawn out through several experiments with the manufactured 1.2 ton electrokinetic decontamination equipment. The optimum pH of electrolyte in cathode chamber for a reduction of volume of metal oxides was below 2.35. Indoor electrokinetic decontamination equipment for treatment of 1.2 tons of the contaminated soil per batch was manufactured to remove uranium from soil with high removal efficiency during a short time. For a reduction of waste electrolyte volume and metal oxide volume, the reuse period of waste electrolyte in the electrokinetic decontamination experiment and the method of a reduction of metal oxide volume in the cathode chamber were drawn out through several experiments with the manufactured electrokinetic equipment. Indoor electrokinetic decontamination equipment for treatment of 1.2 tons of the contaminated soil was manufactured to remove uranium from soil during a short time.

  19. Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Alfaraj, Nasir; Ghoneim, Mohamed T.; Kutbee, Arwa T.; Sridharan, Ashvitha; Hussain, Muhammad Mustafa

    2015-01-01

    The ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.

  20. Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

    KAUST Repository

    Rojas, Jhonathan Prieto

    2015-05-01

    The ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.

  1. Nanoscale piezoelectric vibration energy harvester design

    Science.gov (United States)

    Foruzande, Hamid Reza; Hajnayeb, Ali; Yaghootian, Amin

    2017-09-01

    Development of new nanoscale devices has increased the demand for new types of small-scale energy resources such as ambient vibrations energy harvesters. Among the vibration energy harvesters, piezoelectric energy harvesters (PEHs) can be easily miniaturized and fabricated in micro and nano scales. This change in the dimensions of a PEH leads to a change in its governing equations of motion, and consequently, the predicted harvested energy comparing to a macroscale PEH. In this research, effects of small scale dimensions on the nonlinear vibration and harvested voltage of a nanoscale PEH is studied. The PEH is modeled as a cantilever piezoelectric bimorph nanobeam with a tip mass, using the Euler-Bernoulli beam theory in conjunction with Hamilton's principle. A harmonic base excitation is applied as a model of the ambient vibrations. The nonlocal elasticity theory is used to consider the size effects in the developed model. The derived equations of motion are discretized using the assumed-modes method and solved using the method of multiple scales. Sensitivity analysis for the effect of different parameters of the system in addition to size effects is conducted. The results show the significance of nonlocal elasticity theory in the prediction of system dynamic nonlinear behavior. It is also observed that neglecting the size effects results in lower estimates of the PEH vibration amplitudes. The results pave the way for designing new nanoscale sensors in addition to PEHs.

  2. Feasibility Study of Nanoscale Semiconductor Manufacture Using Thermal Dip Pen Nanolithography

    National Research Council Canada - National Science Library

    King, William P

    2006-01-01

    ...) for the purpose of nanoscale electronics manufacturing. In this project, we have demonstrated that using the thermal DPN technique that both indium metal, and semiconducting organic materials (PDDT, PVDF...

  3. Passive films at the nanoscale

    International Nuclear Information System (INIS)

    Maurice, Vincent; Marcus, Philippe

    2012-01-01

    Highlights: ► Nanoscale data on growth, structure and local properties of passive films reviewed. ► Preferential role of defects of passive films on the corrosion resistance emphasized. ► Effect of grain boundaries on local electronic properties shown by new data. ► Use of atomistic modeling to test mechanistic hypotheses illustrated. - Abstract: The nanometer scale chemical and structural aspects of ultrathin oxide passive films providing self-protection against corrosion to metals and alloys in aqueous environments are reviewed. Data on the nucleation and growth of 2D anodic oxide films, details on the atomic structure and nanostructure of 3D passive films, the preferential role of surface step edges in dissolution in the passive state and the preferential role of grain boundaries of the passive films in passivity breakdown are presented. Future perspectives are discussed, and exemplified by new data obtained on the relationship between the nanostructure of oxide passive films and their local electronic properties. Atomistic corrosion modeling by ab initio density functional theory (DFT) is illustrated by the example of interactions of chloride ions with hydroxylated oxide surfaces, including the role of surface step edges. Data obtained on well-defined substrate surfaces with surface analytical techniques are emphasized.

  4. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  5. Devoluming method and device for radioactive metal wastes containing zirconium alloy

    International Nuclear Information System (INIS)

    Komatsu, Masahiko; Wada, Ryutaro.

    1996-01-01

    The present invention concerns a method of sealing radioactive metal wastes in a capsule and compressing the capsule for devoluming treatment. The method comprises a step of carrying radioactive metal wastes into a sealed chamber having a capacity somewhat greater than that of the capsule, a deaerating step of sucking the air in the sealed chamber to attain a substantially vacuum state, a compression-devoluming step of compression-devoluming the capsule by reducing the volume of the sealed chamber and a transporting step of transporting the devolumed capsule from the sealed chamber. The sealed chamber to which the capsule incorporated with radioactive metal wastes containing a zirconium alloy is carried is then deaerated into a substantially vacuum state. Even if ignitable powdery dusts are generated from the radioactive metal wastes crushed by compression-devoluming of the capsule in the succeeding compression-devoluming step, since the air necessary for ignition is not present, ignition of the powdery dusts is prevented. Alternatively, since the inside of the sealed chamber is filled with an inert gas, ignition of the powdery dusts can effectively be prevented. (N.H.)

  6. Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

    OpenAIRE

    Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

    2016-01-01

    Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

  7. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    Science.gov (United States)

    Kim, Jong Woung

    Finding a promising material and constructing a new method to have both high energy and power are key issues for future energy storage systems. This dissertation addresses three different materials systems to resolve those issues. Pseudocapacitive materials such as RuO2 and MnO2 display high capacitance but Nb2O5, displays a different charge storage mechanism, one highly dependent on its crystal phase rather than its surface area. Various sol-gel techniques were used to synthesize the different phases of Nb2O5 and electrochemical testing was used to study their charge storage with some phases displaying comparable charge storage to MnO2. To overcome the electrical limitations of using an insulating material, the core-shell structure (Nb2O 5/C) was also examined and the method could be generalized to improve other pseudocapacitors. Besides electronic conductivity, the diffusion of the electrolyte ions through the shell material is a critical factor for fast charging/discharging in the core-shell structure. This dissertation also involves another topic, a reconfigurable electrode, that displays both high energy and power density. By constructing a reconfigurable electrode which has different electrical properties (metallic or insulating state) depending on the amount of intercalated `guest' ions into `host' material, it can be used as a battery or electrochemical capacitor material in the insulating or metallic state respectively. Metal oxide bronzes having metal-insulator transition were investigated in this study.

  8. Draining device in an emergency holding floor for leaked liquid metals

    International Nuclear Information System (INIS)

    Kawakami, Hiroto.

    1980-01-01

    Purpose: To automatically discharge leaked liquid metals rapidly to a damping tank in LMFBR type reactors, by the provision of freeze-seal mechanisms having materials capable of being fused due to the heat of the leaked liquid metals to a catching pan for leaked liquid metals. Constitution: A freeze seal pot having a double seal against other liquid by the provision of a freeze seal material fusible by the heat of the leaked metallic sodium and a downwardly opening cup-like inner cylinder closed by a rupturing plate to be ruptured by heat or pressure is provided to the catching pot of a catching tank. A drain pipe connecting by way of a pot to the damping tank is connected to the pan. Accordingly, if the seal member is fused due to the heat of the leaked liquid sodium, the rupturing plate is ruptured due to the decrease in the strength by the heat of the leaked liquid sodium and by the pressure, whereby leaked liquid sodium is automatically discharged into the damping tank rapidly and safely, and the temperature increase in the concrete materials is reduced as compared with the case of cooling the concrete by covering with liners. (Seki, T.)

  9. Electrical Contacts in Monolayer Arsenene Devices.

    Science.gov (United States)

    Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

    2017-08-30

    Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

  10. Polymer−metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, S.; Gravesteijn, Dirk J; Soccol, D.; Kapteijn, F.; Sudhölter, E.J.R.; Gascon, J.; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer. Sensing

  11. Polymer-metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, Sumit; Soccol, Dimitri; Gravesteijn, Dirk J.; Kapteijn, Freek; Sudhölter, E.J.R.; Gascon, Jorge; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-
    MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid
    polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer.

  12. Oscillatory vapour shielding of liquid metal walls in nuclear fusion devices

    NARCIS (Netherlands)

    van Eden, G.G.; Kvon, V.; Van De Sanden, M.C.M.; Morgan, T.W.

    2017-01-01

    Providing an efficacious plasma facing surface between the extreme plasma heat exhaust and the structural materials of nuclear fusion devices is a major challenge on the road to electricity production by fusion power plants. The performance of solid plasma facing surfaces may become critically

  13. Rocket Science at the Nanoscale.

    Science.gov (United States)

    Li, Jinxing; Rozen, Isaac; Wang, Joseph

    2016-06-28

    Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

  14. Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

    CERN Document Server

    Ferraro, Pietro; De Natale, Paolo

    2015-01-01

    This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.

  15. Desgin of On-line Monitoring Device for MOA (Metal Oxide Arrestor Based on FPGA and C8051F

    Directory of Open Access Journals (Sweden)

    Xiaotong YAO

    2014-10-01

    Full Text Available Monitoring of metal oxide surge arresters (MOA due to aging, moisture and other components cause increased resistive current. Through a lot of practices, it has been proved that in the early days, MOA insulation damage and current increase is not obvious. The accurate working conditions of the MOA are also not obvious but it can reflect the aging or moisture of MOA. When the resistive current of the fundamental component increases, there is no increment in the harmonic components that is the general performance of a serious or moisture contamination. In the same way when the resistive current of harmonic components increases, the fundamental component is not increased and it is the general performance of aging. Therefore, this paper designed an experiment-based FPGA and C8051F-line monitoring device. This device uses resistive current as a detection target. The main monitoring parameters are the fundamental and peak value of resistive current, third harmonic content of the leakage current, phase angle difference and power consumption. Through laboratory tests, the device can be used with a network arrester line monitoring, maintenance, reduce the economic losses caused by power outages and improve the distribution network reliability.

  16. Electrochemical energy storage devices using electrodes incorporating carbon nanocoils and metal oxides nanoparticles

    KAUST Repository

    Baby, Rakhi Raghavan

    2011-07-28

    Carbon nanocoil (CNC) based electrodes are shown to be promising candidates for electrochemical energy storage applications, provided the CNCs are properly functionalized. In the present study, nanocrystalline metal oxide (RuO 2, MnO2, and SnO2) dispersed CNCs were investigated as electrodes for supercapacitor applications using different electrochemical methods. In the two electrode configuration, the samples exhibited high specific capacitance with values reaching up to 311, 212, and 134 F/g for RuO2/CNCs, MnO2/CNCs, and SnO2/CNCs, respectively. The values obtained for specific capacitance and maximum storage energy per unit mass of the composites were found to be superior to those reported for metal oxide dispersed multiwalled carbon nanotubes in two electrode configuration. In addition, the fabricated supercapacitors retained excellent cycle life with ∼88% of the initial specific capacitance retained after 2000 cycles. © 2011 American Chemical Society.

  17. Common Principles of Molecular Electronics and Nanoscale Electrochemistry.

    Science.gov (United States)

    Bueno, Paulo Roberto

    2018-05-24

    The merging of nanoscale electronics and electrochemistry can potentially modernize the way electronic devices are currently engineered or constructed. It is well known that the greatest challenges will involve not only miniaturizing and improving the performance of mobile devices, but also manufacturing reliable electrical vehicles, and engineering more efficient solar panels and energy storage systems. These are just a few examples of how technological innovation is dependent on both electrochemical and electronic elements. This paper offers a conceptual discussion of this central topic, with particular focus on the impact that uniting physical and chemical concepts at a nanoscale could have on the future development of electroanalytical devices. The specific example to which this article refers pertains to molecular diagnostics, i.e., devices that employ physical and electrochemical concepts to diagnose diseases.

  18. Multi parametric sensitivity study applied to temperature measurement of metallic plasma facing components in fusion devices

    International Nuclear Information System (INIS)

    Aumeunier, M-H.; Corre, Y.; Firdaouss, M.; Gauthier, E.; Loarer, T.; Travere, J-M.; Gardarein, J-L.; EFDA JET Contributor

    2013-06-01

    In nuclear fusion experiments, the protection system of the Plasma Facing Components (PFCs) is commonly ensured by infrared (IR) thermography. Nevertheless, the surface monitoring of new metallic plasma facing component, as in JET and ITER is being challenging. Indeed, the analysis of infrared signals is made more complicated in such a metallic environment since the signals will be perturbed by the reflected photons coming from high temperature regions. To address and anticipate this new measurement environment, predictive photonic models, based on Monte-Carlo ray tracing (SPEOS R CAA V5 Based), have been performed to assess the contribution of the reflective part in the total flux collected by the camera and the resulting temperature error. This paper deals with the effects of metals features, as the emissivity and reflectivity models, on the accuracy of the surface temperature estimation. The reliability of the features models is discussed by comparing the simulation with experimental data obtained with the wide angle IR thermography system of JET ITER like wall. The impact of the temperature distribution is studied by considering two different typical plasma scenarios, in limiter (ITER start-up scenario) and in X-point configurations (standard divertor scenario). The achievable measurement performances of IR system and risks analysis on its functionalities are discussed. (authors)

  19. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  20. BIOCOMPATIBILITY OF MEDICAL DEVICES BASED ON METALS, CAUSES FORMATION OF PATHOLOGICAL REACTIVITY (A REVIEW OF FOREIGN LITERATURE

    Directory of Open Access Journals (Sweden)

    O. M. Rozhnova

    2015-01-01

    Full Text Available The objective of the research is a review of approaches to the evaluation of biocompatibility of medical devices on the basis of metals and alloys, and to find ways of overcoming the low engraftment of implanted structures. Implantation by artificial materials allows us to regain the use of human organs and tissues and to date has no rivals. The advantage of using metals and alloys for implanted structures is their high reliability in operation, long servicelife, and high functionality. The nature of the interaction between the human body and the implant has an impact on resource use and the durability of the structures. Manufacturers of scientific research into medical implants at the present stage are directed to obtain materials that will not adversely affect the human body, and to ensure the maximum survival rate when using them. At the same time, the data presented in the article suggests that attempts to make higher biocompatible material properties tend to reduce the development of new methods for the surface treatment and the chemical composition modulation implants. World literature demonstrates the lack of a systematic approach to the problem of increased sensitivity of patients to different metals and alloys (metal sensitization, resulting in the development of complications such as the development of aseptic inflammation and infectious complications of unstable structures, and loss of functionality. Consequently, there is a need to search for ways to improve the biocompatibility of materials used in medicine, based on an assessment of immune defense mechanisms, and the development of algorithms preoperative tactics. 

  1. Creation of nanoscale objects by swift heavy ion track manipulations

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.; Stolterfoht, N.

    2003-01-01

    In this work we give an overview of the possibilities to create new objects with nanoscale dimensions with ion tracks, for future applications. This can be realized in two ways: by manipulation of latent swift heavy ion (SHI) tracks, or by embedding specific structures within etched SHI tracks. In the first case one can make use of irradiation effects such as phase transitions and chemical or structural changes along the tracks. In the latter case, one can fill etched SHI tracks with metals, semiconductors, insulating and conducting polymers, fullerite, or colloides. Wires and tubules with outer diameters, between about 50 nm and 5 μm and lengths of up to about 100 μm can be obtained. The most important production techniques are galvanic and chemical depositions. Ion Transmission Spectrometry has turned out to be an especially useful tool for the characterisation of the produced objects. Present studies aim at the construction of condensers, magnets, diodes, and sensors in etched tracks. An obstacle for the practical realization of smallest-size polymeric ion track devices is the statistical distribution of the ion tracks on the target areas, which yields some pixels without any track, and other pixels even with overlapping tracks on a given sample. In a first test experiment we demonstrate that one can, in principle, overcome that problem by taking self-ordered porous foils as masks for subsequent high-fluence SHI irradiation. (author)

  2. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  3. PREFACE: Nanoscale science and technology

    Science.gov (United States)

    Bellucci, Stefano

    2008-11-01

    compared with the as-produced nanotubes. The second day was dedicated to three more sessions: Characterization and excitations in nanostructures. Superconductivity at the nanoscale. Transport in low-dimensional electron systems and spin effects. The first session of this second day was opened by G Stefani with a lecture on Auger spectroscopies. Then E Perfetto showed the results of a study on electron correlations in carbon nanotubes and graphite from Auger spectroscopy. He determined the screened on-site Coulomb repulsion in graphite and single wall carbon nanotubes by measuring their Auger spectra and performing a new theoretical analysis based on an extended Cini-Sawatzky approach where only one fit parameter is employed. The experimental lineshape is very well reproduced by the theory and this allows the value of the screened on-site repulsion between 2p states to be determined, which is found to be 2.1 eV in graphite and 4.6 eV in nanotubes. The latter is robust by varying the nanotube radius from 1 to 2 nm. S Ugenti gave a presentation setting up a model aimed for the calculation of three-hole features like the ones due to core-valence-valence Auger decays following Coster-Kronig transitions. While several experiments made in the 1970s and in the 1990s on the Auger LMM spectra of transition metals showed the existence of these structures, a theory able to explain and predict them is still missing today. The described model is grounded on the one-step approach, but the use of a valence band fully below the Fermi level allowed the authors to treat their calculations in a three-step approach, so keeping in this exploratory work complications to a minimum. The Hamiltonian of the system is placed in an Anderson-like picture and the spectra are computed evaluating a three-body Green's function. Within this model one arrives to a simple and closed formula covering the whole range between weak and strong correlation. It is found that in general the satellites cover separated

  4. Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures

    Science.gov (United States)

    Kaul, Anupama B.; Megerian, Krikor G.; Von Allmen, Paul A.; Baron, Richard L.

    2010-01-01

    Plasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are

  5. Light-matter interaction physics and engineering at the nanoscale

    CERN Document Server

    Weiner, John

    2013-01-01

    This book draws together the essential elements of classical electrodynamics, surface wave physics, plasmonic materials, and circuit theory of electrical engineering to provide insight into the essential physics of nanoscale light-matter interaction and to provide design methodology for practical nanoscale plasmonic devices. A chapter on classical and quantal radiation also highlights the similarities (and differences) between the classical fields of Maxwell's equations and the wave functions of Schrodinger's equation. The aim of this chapter is to provide a semiclassical picture of atomic absorption and emission of radiation, lending credence and physical plausibility to the "rules" of standard wave-mechanical calculations.

  6. Modelling Methods of Magnetohydrodynamic Phenomena Occurring in a Channel of the Device Used to Wash Out the Spent Automotive Catalyst by a Liquid Metal

    Directory of Open Access Journals (Sweden)

    Fornalczyk A.

    2016-06-01

    Full Text Available The recovery of precious metals is necessary for environmental and economic reasons. Spent catalysts from automotive industry containing precious metals are very attractive recyclable material as the devices have to be periodically renovated and eventually replaced. This paper presents the method of removing platinum from the spent catalytic converters applying lead as a collector metal in a device used to wash out by using mangetohydrodynamic stirrer. The article includes the description of the methods used for modeling of magnetohydrodynamic phenomena (coupled analysis of the electromagnetic, temperature and flow fields occurring in this particular device. The paper describes the general phenomena and ways of coupling the various physical fields for this type of calculation. The basic computational techniques with a discussion of their advantages and disadvantages are presented.

  7. Nanoporous metal film: An energy-dependent transmission device for electron waves

    International Nuclear Information System (INIS)

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  8. Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

    Science.gov (United States)

    Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

    2018-01-01

    This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

  9. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  10. Improving Neural Recording Technology at the Nanoscale

    Science.gov (United States)

    Ferguson, John Eric

    Neural recording electrodes are widely used to study normal brain function (e.g., learning, memory, and sensation) and abnormal brain function (e.g., epilepsy, addiction, and depression) and to interface with the nervous system for neuroprosthetics. With a deep understanding of the electrode interface at the nanoscale and the use of novel nanofabrication processes, neural recording electrodes can be designed that surpass previous limits and enable new applications. In this thesis, I will discuss three projects. In the first project, we created an ultralow-impedance electrode coating by controlling the nanoscale texture of electrode surfaces. In the second project, we developed a novel nanowire electrode for long-term intracellular recordings. In the third project, we created a means of wirelessly communicating with ultra-miniature, implantable neural recording devices. The techniques developed for these projects offer significant improvements in the quality of neural recordings. They can also open the door to new types of experiments and medical devices, which can lead to a better understanding of the brain and can enable novel and improved tools for clinical applications.

  11. The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

    Directory of Open Access Journals (Sweden)

    Lin Shu

    2016-04-01

    Full Text Available We report in this paper on the study of surface acoustic wave (SAW resonators based on an AlN/titanium alloy (TC4 structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor and electromechanical coupling coefficient (k2 were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM of AlN (002 peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems.

  12. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    Science.gov (United States)

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  13. Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

    Directory of Open Access Journals (Sweden)

    Chamanei S. Perera

    2015-10-01

    Full Text Available In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.

  14. Studies on advanced superconductors for fusion device. Pt. 2. Metallic superconductors other than Nb{sub 3}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Tachikawa, K.; Yamamoto, J.; Mito, T. [eds.

    1997-03-01

    A comprehensive report on the present status of the development of Nb{sub 3}Sn superconductors was published as the NIFS-MEMO-20 in March, 1996 (Part 1 of this report series). The second report of this study covers various progress so far achieved in the research and development on advanced metallic superconductors other than Nb{sub 3}Sn. Among different A15 crystal-type compounds, Nb{sub 3}Al has been fabricated into cables with large current-carrying capacity for fusion device referring its smaller sensitivity to mechanical strain than Nb{sub 3}Sn. Other high-field A15 superconductors, e.g. V{sub 3}Ga, Nb{sub 3}Ge and Nb{sub 3}(Al,Ge), have been also fabricated through different novel processes as promising alternatives to Nb{sub 3}Sn conductors. Meanwhile, B1 crystal-type NbN and C15 crystal-type V{sub 2}(Hf,Zr) high-field superconductors are characterized by their excellent tolerance to mechanical strain and neutron irradiation. Chevrel-type PbMo{sub 6}S{sub 8} compound has gained much interests due to its extremely high upper critical field. In addition, this report includes the recent progress in ultra-fine filamentary NbTi wires for AC use, and that in NbTi/Cu magnetic shields necessary in the application of high magnetic field. The data on the decay of radioactivity in a variety of metals relating to fusion superconducting magnet are also attached as appendices. We hope that this report might contribute substantially as a useful reference for the planning of fusion apparatus of next generation as well as that of other future superconducting devices. (author)

  15. Effectiveness of Devices to Monitor Biofouling and Metals Deposition on Plumbing Materials Exposed to a Full-Scale Drinking Water Distribution System

    OpenAIRE

    Ginige, Maneesha P.; Garbin, Scott; Wylie, Jason; Krishna, K. C. Bal

    2017-01-01

    A Modified Robbins Device (MRD) was installed in a full-scale water distribution system to investigate biofouling and metal depositions on concrete, high-density polyethylene (HDPE) and stainless steel surfaces. Bulk water monitoring and a KIWA monitor (with glass media) were used to offline monitor biofilm development on pipe wall surfaces. Results indicated that adenosine triphosphate (ATP) and metal concentrations on coupons increased with time. However, bacterial diversities decreased. Th...

  16. Properties of Friction Welding of Dissimilar Metals WCu-Cu Weld for Electrical Contact Device

    Energy Technology Data Exchange (ETDEWEB)

    An, Y. H.; Yoon, G. G. [Korea Electrotechnology Research Institute (Korea); Min, T. K. [Chungnam National University (Korea); Han, B. S. [Chonbuk National University (Korea)

    2000-04-01

    A copper-tungsten sintered alloy(WCu) has been friction-welded to a tough pitch copper (Cu) in order to investigate friction weldability. The maximum tensile strength of the WCu-Cu friction welded joints had up to 96% of those of the Cu base metal under the condition of friction time 0.6sec, friction pressure 45MPa, upset pressure 125MPa and upset time 5.0sec. And it is confirmed that the tensile strength of friction welded joints are influenced highly by upset pressure rather than friction time. And it is considered that mixed layer was formed in the Cu adjacent side to the weld interface, W particles included in mixed layer induced fracture in the Cu adjacent side to the weld interface and also, thickness of mixed layer was reduced as upset pressure increase. (author). refs., figs., tabs.

  17. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  18. Liquid metals as alternative solution for the power exhaust of future fusion devices: status and perspective

    International Nuclear Information System (INIS)

    Coenen, J W; Philipps, V; Sergienko, G; Terra, A; Unterberg, B; Wegener, T; De Temmerman, G; Van den Bekerom, D C M; Federici, G; Strohmayer, G

    2014-01-01

    Applying liquid metals as plasma facing components for fusion power-exhaust can potentially ameliorate lifetime issues as well as limitations to the maximum allowed surface heat loads by allowing for a more direct contact with the coolant. The material choice has so far been focused on lithium (Li), as it showed beneficial impact on plasma operation. Here materials such as tin (Sn), gallium (Ga) and aluminum (Al) are discussed as alternatives potentially allowing higher operating temperatures without strong evaporation. Power loads of up to 25 MW m −2 for a Sn/W component can be envisioned based on calculations and modeling. Reaching a higher operating temperature due to material re-deposition will be discussed. Liquids typically face stability issues due to j × B forces, potential pressure and magnetohydrodynamic driven instabilities. The capillary porous system is used for stabilization by a mesh (W and Mo) substrate and replenishment by means of capillary action. (paper)

  19. Theory of tunneling in metal--superconductor devices: Supercurrents in the superconductor gap at zero temperature

    International Nuclear Information System (INIS)

    Garcia, N.; Flores, F.; Guinea, F.

    1988-01-01

    Tunneling experiments in metal-oxide superconductor have shown the existence of ''leakage'' currents for applied voltages V smaller than one-half of the superconductor gap Δ. These currents are independent of temperature T. Recently experiments with scanning tunneling microscopy (STM) and squeezable tunnel junctions have shown that the observation of the superconductor gap depends strongly on the resistance in the junction. In fact only for resistances larger than ∼10 6 Ω the gap is clearly observable. These experiments have been explained in terms of the perturbative Hamiltonian formalism of Bardeen. However, it may happen that this theory while applicable for very large resistances may not be so for small tunnel resistances. We present here a nonperturbative theory in all orders of the transmitivity chemical bondTochemical bond 2 and show the existence of supercurrents for values of V 2 . We believe that experiments in STM and other junctions should be interpreted in the frame of this theory

  20. Quantitative Analysis of Heavy Metals in Water Based on LIBS with an Automatic Device for Sample Preparation

    International Nuclear Information System (INIS)

    Hu Li; Zhao Nanjing; Liu Wenqing; Meng Deshuo; Fang Li; Wang Yin; Yu Yang; Ma Mingjun

    2015-01-01

    Heavy metals in water can be deposited on graphite flakes, which can be used as an enrichment method for laser-induced breakdown spectroscopy (LIBS) and is studied in this paper. The graphite samples were prepared with an automatic device, which was composed of a loading and unloading module, a quantitatively adding solution module, a rapid heating and drying module and a precise rotating module. The experimental results showed that the sample preparation methods had no significant effect on sample distribution and the LIBS signal accumulated in 20 pulses was stable and repeatable. With an increasing amount of the sample solution on the graphite flake, the peak intensity at Cu I 324.75 nm accorded with the exponential function with a correlation coefficient of 0.9963 and the background intensity remained unchanged. The limit of detection (LOD) was calculated through linear fitting of the peak intensity versus the concentration. The LOD decreased rapidly with an increasing amount of sample solution until the amount exceeded 20 mL and the correlation coefficient of exponential function fitting was 0.991. The LOD of Pb, Ni, Cd, Cr and Zn after evaporating different amounts of sample solution on the graphite flakes was measured and the variation tendency of their LOD with sample solution amounts was similar to the tendency for Cu. The experimental data and conclusions could provide a reference for automatic sample preparation and heavy metal in situ detection. (paper)

  1. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.

    Science.gov (United States)

    Taha, Mohammad; Walia, Sumeet; Ahmed, Taimur; Headland, Daniel; Withayachumnankul, Withawat; Sriram, Sharath; Bhaskaran, Madhu

    2017-12-20

    Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.

  2. Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Stephen M. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA; Luican-Mayer, Adina [Nanoscience and Technology Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5, Canada; Bhattacharya, Anand [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Nanoscience and Technology Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

    2017-11-27

    Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.

  3. Enabling complex nanoscale pattern customization using directed self-assembly.

    Science.gov (United States)

    Doerk, Gregory S; Cheng, Joy Y; Singh, Gurpreet; Rettner, Charles T; Pitera, Jed W; Balakrishnan, Srinivasan; Arellano, Noel; Sanders, Daniel P

    2014-12-16

    Block copolymer directed self-assembly is an attractive method to fabricate highly uniform nanoscale features for various technological applications, but the dense periodicity of block copolymer features limits the complexity of the resulting patterns and their potential utility. Therefore, customizability of nanoscale patterns has been a long-standing goal for using directed self-assembly in device fabrication. Here we show that a hybrid organic/inorganic chemical pattern serves as a guiding pattern for self-assembly as well as a self-aligned mask for pattern customization through cotransfer of aligned block copolymer features and an inorganic prepattern. As informed by a phenomenological model, deliberate process engineering is implemented to maintain global alignment of block copolymer features over arbitrarily shaped, 'masking' features incorporated into the chemical patterns. These hybrid chemical patterns with embedded customization information enable deterministic, complex two-dimensional nanoscale pattern customization through directed self-assembly.

  4. Nanoscale shape-memory alloys for ultrahigh mechanical damping.

    Science.gov (United States)

    San Juan, Jose; Nó, Maria L; Schuh, Christopher A

    2009-07-01

    Shape memory alloys undergo reversible transformations between two distinct phases in response to changes in temperature or applied stress. The creation and motion of the internal interfaces between these phases during such transformations dissipates energy, making these alloys effective mechanical damping materials. Although it has been shown that reversible phase transformations can occur in nanoscale volumes, it is not known whether these transformations have a sample size dependence. Here, we demonstrate that the two phases responsible for shape memory in Cu-Al-Ni alloys are more stable in nanoscale pillars than they are in the bulk. As a result, the pillars show a damping figure of merit that is substantially higher than any previously reported value for a bulk material, making them attractive for damping applications in nanoscale and microscale devices.

  5. Experimental Investigation on the Behavior of Bracing Damper Systems by Utilizing Metallic Yielding and Recentering Material Devices

    Directory of Open Access Journals (Sweden)

    Jong Wan Hu

    2018-01-01

    Full Text Available With the aim of effectively reducing the structural damage caused by earthquake events, bracing systems equipped with retrofitting damper devices, which take advantage of the energy dissipation and impact absorption, have been widely used in practical construction sites. These bracing dampers, however, have been recognized as expendable supplies for easily replacing the damaged ones after a strong earthquake because they are commonly designed to undergo concentrated force and deformation for the purpose of protecting the main structural members such as the columns and beams. In this paper, the use of new superelastic shape memory alloy (SMA dampers that can partially recover their original configuration is proposed to decrease the repair cost. In addition, the conventional steel dampers used for improving the energy dissipation arising due to metallic yielding are additionally integrated into the bracing member. The behaviors of such bracing systems with the damper devices were reproduced in experimental tests with the cyclic loading history, and then their strength capacity and recentering capability were estimated based on the experiment results. Finally, additional experimental tests were performed by imposing cyclic loading histories with different loading speeds on the superelastic SMA and steel plate damper specimens.

  6. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  7. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  8. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  9. A novel safety device with metal counter meshing gears discriminator directly driven by axial flux permanent magnet micromotors based on MEMS technology

    Science.gov (United States)

    Zhang, Weiping; Chen, Wenyuan; Zhao, Xiaolin; Li, Shengyong; Jiang, Yong

    2005-08-01

    In a novel safety device based on MEMS technology for high consequence systems, the discriminator consists of two groups of metal counter meshing gears and two pawl/ratchet wheel mechanisms. Each group of counter meshing gears is onepiece and driven directly by an axial flux permanent magnet micromotor respectively. The energy-coupling element is an optical shutter with two collimators and a coupler wheel. The safety device's probability is less than 1/106. It is fabricated by combination of an LiGA-like process and precision mechanical engineering. The device has simple structure, few dynamic problems, high strength and strong reliability.

  10. Surface Defects in Sheet Metal Forming: a Simulative Laboratory Device and Comparison with FE Analysis

    Science.gov (United States)

    Thuillier, Sandrine; Le Port, Alban; Manach, Pierre-Yves

    2011-08-01

    Surface defects are small concave imperfections that can develop during forming on outer convex panels of automotive parts like doors. They occur during springback steps, after drawing in the vicinity of bending over a curved line and flanging/hemming in the vicinity of the upper corner of a door. They can alter significantly the final quality of the automobile and it is of primary importance to deal with them as early as possible in the design of the forming tools. The aim of this work is to reproduce at the laboratory scale such a defect, in the case of the flanging along a curved edge, made of two orthogonal straight part of length 50 mm and joint by a curved line. A dedicated device has been designed and steel samples were tested. Each sample was measured initially (after laser cutting) and after flanging, with a 3D measuring machine. 2D profiles were extracted and the curvature was calculated. Surface defects were defined between points where the curvature sign changed. Isovalues of surface defect depth could then be plotted, thus displaying also the spatial geometry on the part surface. An experimental database has been created on the influence of process parameters like the flanging height and the flanging radius. Numerical simulations have been performed with the finite element code Abaqus to predict the occurrence of such surface defects and to analyze stress and strain distribution within the defect area.

  11. Radiation synthesis of the nano-scale materials

    Energy Technology Data Exchange (ETDEWEB)

    Yonghong, Ni; Zhicheng, Zhang; Xuewu, Ge; Xiangling, Xu [Department of Applied Chemistry, Univ. of Science and Technology of China, Hefei (China)

    2000-03-01

    Some recent research jobs on fabricating the nano-scale materials via {gamma}-irradiation in our laboratory are simply summarized in this paper. The main contents contain four aspects: (1) the preparation of metal alloy - powders; (2) the fabrication of polymer -metal nano-composites in aqueous solution, micro-emulsion and emulsion systems; (3) the synthesis of metal sulfide nano-particles and (4) the preparation of the ordered nano-structure materials. The corresponding preparation processes are also simply described. (author)

  12. Radiation synthesis of the nano-scale materials

    International Nuclear Information System (INIS)

    Ni Yonghong; Zhang Zhicheng; Ge Xuewu; Xu Xiangling

    2000-01-01

    Some recent research jobs on fabricating the nano-scale materials via γ-irradiation in our laboratory are simply summarized in this paper. The main contents contain four aspects: (1) the preparation of metal alloy - powders; (2) the fabrication of polymer -metal nano-composites in aqueous solution, micro-emulsion and emulsion systems; (3) the synthesis of metal sulfide nano-particles and (4) the preparation of the ordered nano-structure materials. The corresponding preparation processes are also simply described. (author)

  13. Current at Metal-Organic Interfaces

    Science.gov (United States)

    Kern, Klaus

    2012-02-01

    Charge transport through atomic and molecular constrictions greatly affects the operation and performance of organic electronic devices. Much of our understanding of the charge injection and extraction processes in these systems relays on our knowledge of the electronic structure at the metal-organic interface. Despite significant experimental and theoretical advances in studying charge transport in nanoscale junctions, a microscopic understanding at the single atom/molecule level is missing. In the present talk I will present our recent results to probe directly the nanocontact between single molecules and a metal electrode using scanning probe microscopy and spectroscopy. The experiments provide unprecedented microscopic details of single molecule and atom junctions and open new avenues to study quantum critical and many body phenomena at the atomic scale. Implications for energy conversion devices and carbon based nanoelectronics will also be discussed.

  14. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  15. Direct Probing of Polarization Charge at Nanoscale Level

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Owoong [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering; Seol, Daehee [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering; Lee, Dongkyu [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Han, Hee [Korea Research Inst. of Standards and Science (KRISS), Daejeon (South Korea); Lindfors-Vrejoiu, Ionela [Univ. of Cologne (Germany). Physics Inst.; Lee, Woo [Korea Research Inst. of Standards and Science (KRISS), Daejeon (South Korea); Jesse, Stephen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Lee, Ho Nyung [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Alexe, Marin [Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics; Kim, Yunseok [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering

    2017-11-14

    Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm-2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.

  16. Characterization of the harvesting capabilities of an ionic polymer metal composite device

    Science.gov (United States)

    Brufau-Penella, J.; Puig-Vidal, M.; Giannone, P.; Graziani, S.; Strazzeri, S.

    2008-02-01

    Harvesting systems capable of transforming dusty environmental energy into electrical energy have aroused considerable interest in the last two decades. Several research works have focused on the transformation of mechanical environmental vibrations into electrical energy. Most of the research activity refers to classic piezoelectric ceramic materials, but more recently piezoelectric polymer materials have been considered. In this paper, a novel point of view regarding harvesting systems is proposed: using ionic polymer metal composites (IPMCs) as generating materials. The goal of this paper is the development of a model able to predict the energy harvesting capabilities of an IPMC material working in air. The model is developed by using the vibration transmission theory of an Euler-Bernoulli cantilever IPMC beam. The IPMC is considered to work in its linear elastic region with a viscous damping contribution ranging from 0.1 to 100 Hz. An identification process based on experimental measurements performed on a Nafion® 117 membrane is used to estimate the material parameters. The model validation shows a good agreement between simulated and experimental results. The model is used to predict the optimal working region and the optimal geometrical parameters for the maximum power generation capacity of a specific membrane. The model takes into account two restrictions. The first is due to the beam theory, which imposes a maximum ratio of 0.5 between the cantilever width and length. The second restriction is to force the cantilever to oscillate with a specific strain; in this paper a 0.3% strain is considered. By considering these two assumptions as constraints on the model, it is seen that IPMC materials could be used as low-power generators in a low-frequency region. The optimal dimensions for the Nafion® 117 membrane are length = 12 cm and width = 6.2 cm, and the electric power generation is 3 nW at a vibrating frequency of 7.09 rad s-1. IPMC materials can sustain

  17. Nanoscale displacement sensing using microfabricated variable-inductance planar coils

    Science.gov (United States)

    Coskun, M. Bulut; Thotahewa, Kasun; Ying, York-Sing; Yuce, Mehmet; Neild, Adrian; Alan, Tuncay

    2013-09-01

    Microfabricated spiral inductors were employed for nanoscale displacement detection, suitable for use in implantable pressure sensor applications. We developed a variable inductor sensor consisting of two coaxially positioned planar coils connected in series to a measurement circuit. The devices were characterized by varying the air gap between the coils hence changing the inductance, while a Colpitts oscillator readout was used to obtain corresponding frequencies. Our approach shows significant advantages over existing methodologies combining a displacement resolution of 17 nm and low hysteresis (0.15%) in a 1 × 1 mm2 device. We show that resolution could be further improved by shrinking the device's lateral dimensions.

  18. Nanoscale rectenna for broadband rectification of light from infrared to visible

    Science.gov (United States)

    Zimmerman, Darin; Chen, James; Phillips, Michael; Rager, Dennis; Sinisi, Zachary; Wambold, Raymond; Weisel, Gary; Weiss, Brock; Willis, Brian; Miskovsky, Nicholas

    2014-03-01

    We describe a novel approach to the efficient collection and rectification of solar radiation in a device designed to operate from the infrared through the visible. Here, a nanoscale, rectenna array acts both as an absorber of incident radiation and as a rectifier. Rectification derives not from temperature or material asymmetry, as with metal-insulator-metal or silicon-based, Schottky diodes. Instead, it derives from the geometric asymmetry of the rectenna, which is composed of a pointed tip and a flat collector anode. In this arrangement, the difference between the potential barriers for forward and reverse bias results in a rectified dc current. To achieve anode-cathode gap distances within the tunneling regime, we employ selective atomic-layer deposition of copper applied to palladium rectenna arrays produced by electron-beam lithography. We present details of device fabrication and preliminary results of computer simulation, optical characterization, and electro-optical response. This work supported in part by the National Science Foundation: ECCS-1231248 and ECCS-1231313.

  19. Performances of low-dose dual-energy CT in reducing artifacts from implanted metallic orthopedic devices

    Energy Technology Data Exchange (ETDEWEB)

    Filograna, Laura [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland); Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); De Waure, Chiara; Calabro, Giovanna Elisa [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Research Centre for Health Technology Assessment, Department of Public Health, Section of Hygiene, Rome (Italy); Finkenstaedt, Tim [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Thali, Michael John [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland)

    2016-07-15

    The objective was to evaluate the performances of dose-reduced dual-energy computed tomography (DECT) in decreasing metallic artifacts from orthopedic devices compared with dose-neutral DECT, dose-neutral single-energy computed tomography (SECT), and dose-reduced SECT. Thirty implants in 20 consecutive cadavers underwent both SECT and DECT at three fixed CT dose indexes (CTDI): 20.0, 10.0, and 5.0 mGy. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV, and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. In each group, the image quality of the seven monoenergetic images and of the SECT image was assessed qualitatively and quantitatively by visually rating and by measuring the maximum streak artifact respectively. The comparison between SECT and OPTkeV evaluated overall within all groups showed a significant difference (p <0.001), with OPTkeV images providing better images. Comparing OPTkeV with the other DECT images, a significant difference was shown (p <0.001), with OPTkeV and 130-keV images providing the qualitatively best results. The OPTkeV images of 5.0-mGy acquisitions provided percentages of images with scores 1 and 2 of 36 % and 30 % respectively, compared with 0 % and 33.3 % of the corresponding SECT images of 10- and 20-mGy acquisitions. Moreover, DECT reconstructions at the OPTkeV of the low-dose group showed higher CT numbers than the SECT images of dose groups 1 and 2. This study demonstrates that low-dose DECT permits a reduction of artifacts due to metallic implants to be obtained in a similar manner to neutral-dose DECT and better than reduced or neutral-dose SECT. (orig.)

  20. Catalysis at the nanoscale may change selectivity.

    Science.gov (United States)

    Costentin, Cyrille; Savéant, Jean-Michel

    2016-10-18

    Among the many virtues ascribed to catalytic nanoparticles, the prospect that the passage from the macro- to the nanoscale may change product selectivity attracts increasing attention. To date, why such effects may exist lacks explanation. Guided by recent experimental reports, we propose that the effects may result from the coupling between the chemical steps in which the reactant, intermediates, and products are involved and transport of these species toward the catalytic surface. Considering as a thought experiment the competitive formation of hydrogen and formate upon reduction of hydrogenocarbonate ions on metals like palladium or platinum, a model is developed that allows one to identify the governing parameters and predict the effect of nanoscaling on selectivity. The model leads to a master equation relating product selectivity and thickness of the diffusion layer. The latter parameter varies considerably upon passing from the macro- to the nanoscale, thus predicting considerable variations of product selectivity. These are subtle effects in the sense that the same mechanism might exhibit a reverse variation of the selectivity if the set of parameter values were different. An expression is given that allows one to predict the direction of the effect. There has been a tendency to assign the catalytic effects of nanoscaling to chemical reactivity changes of the active surface. Such factors might be important in some circumstances. We, however, insist on the likely role of short-distance transport on product selectivity, which could have been thought, at first sight, as the exclusive domain of chemical factors.

  1. Nanoscale Science and Engineering in Romania

    International Nuclear Information System (INIS)

    Dascalu, Dan; Topa, Vladimir; Kleps, Irina

    2001-01-01

    In spite of difficult working conditions and with very low financial support, many groups from Romania are involved in emerging fields, such as the nanoscale science and technology. Until the last years, this activity was developed without a central coordination and without many interactions between these research groups. In the year 2000, some of the institutes and universities active in the nanotechnology field in Romania founded the MICRONANOTECH network. The aim of this paper is to emphasize the main activities and results of the Romanian groups working in this novel domain. Most of the groups are deal with the nanomaterial technology and only few of them have activities in nanostructure science and engineering, in new concepts and device modeling and technology. This paper describes the nanotechnology research development in two of the most significant institutes from Romania: Centre for Nanotechnologies from National Institute for Research and Development in Microtehnologies (IMT-Bucharest) and from National Institute for Research and Development in Materials Physics (INCD-FM), Magurele. The Romanian research results in nanotechnology field were presented in numerous papers presented in international conferences or published in national and international journals. They are also presented in patents, international awards and fellowships. The research effort and financial support are outlined. Some future trends of the Romanian nanoscale science and technology research are also described

  2. Recent developments in drug eluting devices with tailored interfacial properties.

    Science.gov (United States)

    Sanchez-Rexach, Eva; Meaurio, Emilio; Sarasua, Jose-Ramon

    2017-11-01

    Drug eluting devices have greatly evolved during past years to become fundamental products of great marketing importance in the biomedical field. There is currently a large diversity of highly specialized devices for specific applications, making the development of these devices an exciting field of research. The replacement of the former bare metal devices by devices loaded with drugs allowed the sustained and controlled release of drugs, to achieve the desired local therapeutic concentration of drug. The newer devices have been "engineered" with surfaces containing micro- and nanoscale features in a well-controlled manner, that have shown to significantly affect cellular and subcellular function of various biological systems. For example, the topography can be structured to form an antifouling surface mimicking the defense mechanisms found in nature, like the skin of the shark. In the case of bone implants, well-controlled nanostructured interfaces can promote osteoblast differentiation and matrix production, and enhance short-term and long-term osteointegration. In any case, the goal of current research is to design implants that induce controlled, guided, and rapid healing. This article reviews recent trends in the development of drug eluting devices, as well as recent developments on the micro/nanotechnology scales, and their future challenges. For this purpose medical devices have been divided according to the different systems of the body they are focused to: orthopedic devices, breathing stents, gastrointestinal and urinary systems, devices for cardiovascular diseases, neuronal implants, and wound dressings. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Nanoscale surface characterization using laser interference microscopy

    Science.gov (United States)

    Ignatyev, Pavel S.; Skrynnik, Andrey A.; Melnik, Yury A.

    2018-03-01

    Nanoscale surface characterization is one of the most significant parts of modern materials development and application. The modern microscopes are expensive and complicated tools, and its use for industrial tasks is limited due to laborious sample preparation, measurement procedures, and low operation speed. The laser modulation interference microscopy method (MIM) for real-time quantitative and qualitative analysis of glass, metals, ceramics, and various coatings has a spatial resolution of 0.1 nm for vertical and up to 100 nm for lateral. It is proposed as an alternative to traditional scanning electron microscopy (SEM) and atomic force microscopy (AFM) methods. It is demonstrated that in the cases of roughness metrology for super smooth (Ra >1 nm) surfaces the application of a laser interference microscopy techniques is more optimal than conventional SEM and AFM. The comparison of semiconductor test structure for lateral dimensions measurements obtained with SEM and AFM and white light interferometer also demonstrates the advantages of MIM technique.

  4. Supercapacitors - nanostructured materials and nanoscale processes contributing to the next mobile generation

    International Nuclear Information System (INIS)

    Mahon, P.J.; Drummond, C.J.

    2001-01-01

    Supercapacitors, alternatively known as ultracapacitors, electrical double-layer capacitors or electrochemical capacitors, are energy storage devices that have considerably more specific capacitance than conventional capacitors. In recent years there have been major advancements in the design of low impedance (low resistance) Supercapacitors, which are ideally suited for high-power applications for mobile devices, particularly those using GSM (Global System for Mobile communication) and GPRS (General Packet Radio Service) wireless technologies. Cap-XX Pty Ltd is a global leader in supercapacitor technology. Cap-XX was established in 1997 and evolved from a collaboration that began in 1994 between Plessey Ducon Pty Ltd, a company that manufactured metallized film capacitors, and what is now CSIRO Energy Technology. In this article we outline the physical chemistry, and in particular, the colloid and surface, electro-, and polymer chemistry, elements that underpin supercapacitor performance. The emphasis is placed on high surface area, particulate-carbon-based supercapacitor technology. This is the cap-XX technology. It is a good example of nanostructured materials and nanoscale processes governing device performance. Some application areas for Supercapacitors are highlighted at the end of this article. Copyright (2001) CSIRO Australia

  5. Nanoscale Reinforced, Polymer Derived Ceramic Matrix Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Rajendra Bordia

    2009-07-31

    The goal of this project was to explore and develop a novel class of nanoscale reinforced ceramic coatings for high temperature (600-1000 C) corrosion protection of metallic components in a coal-fired environment. It was focused on developing coatings that are easy to process and low cost. The approach was to use high-yield preceramic polymers loaded with nano-size fillers. The complex interplay of the particles in the polymer, their role in controlling shrinkage and phase evolution during thermal treatment, resulting densification and microstructural evolution, mechanical properties and effectiveness as corrosion protection coatings were investigated. Fe-and Ni-based alloys currently used in coal-fired environments do not possess the requisite corrosion and oxidation resistance for next generation of advanced power systems. One example of this is the power plants that use ultra supercritical steam as the working fluid. The increase in thermal efficiency of the plant and decrease in pollutant emissions are only possible by changing the properties of steam from supercritical to ultra supercritical. However, the conditions, 650 C and 34.5 MPa, are too severe and result in higher rate of corrosion due to higher metal temperatures. Coating the metallic components with ceramics that are resistant to corrosion, oxidation and erosion, is an economical and immediate solution to this problem. Good high temperature corrosion protection ceramic coatings for metallic structures must have a set of properties that are difficult to achieve using established processing techniques. The required properties include ease of coating complex shapes, low processing temperatures, thermal expansion match with metallic structures and good mechanical and chemical properties. Nanoscale reinforced composite coatings in which the matrix is derived from preceramic polymers have the potential to meet these requirements. The research was focused on developing suitable material systems and

  6. Engineering Platinum Alloy Electrocatalysts in Nanoscale for PEMFC Application

    Energy Technology Data Exchange (ETDEWEB)

    He, Ting [Idaho National Laboratory

    2016-03-01

    Fuel cells are expected to be a key next-generation energy source used for vehicles and homes, offering high energy conversion efficiency and minimal pollutant emissions. However, due to large overpotentials on anode and cathode, the efficiency is still much lower than theoretically predicted. During the past decades, considerable efforts have been made to investigate synergy effect of platinum alloyed with base metals. But, engineering the alloy particles in nanoscale has been a challenge. Most important challenges in developing nanostructured materials are the abilities to control size, monodispersity, microcomposition, and even morphology or self-assembly capability, so called Nanomaterials-by-Design, which requires interdisciplinary collaborations among computational modeling, chemical synthesis, nanoscale characterization as well as manufacturing processing. Electrocatalysts, particularly fuel cell catalysts, are dramatically different from heterogeneous catalysts because the surface area in micropores cannot be electrochemically controlled on the same time scale as more transport accessible surfaces. Therefore, electrocatalytic architectures need minimal microporous surface area while maximizing surfaces accessible through mesopores or macropores, and to "pin" the most active, highest performance physicochemical state of the materials even when exposed to thermodynamic forces, which would otherwise drive restructuring, crystallization, or densification of the nanoscale materials. In this presentation, results of engineering nanoscale platinum alloy particles down to 2 ~ 4 nm will be discussed. Based on nature of alloyed base metals, various synthesis technologies have been studied and developed to achieve capabilities of controlling particle size and particle microcomposition, namely, core-shell synthesis, microemulsion technique, thermal decomposition process, surface organometallic chemical method, etc. The results show that by careful engineering the

  7. NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

    Science.gov (United States)

    This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

  8. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  9. Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: andy.clayton@optictechnium.com [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Irvine, S.J.C.; Barrioz, V.; Brooks, W.S.M. [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Zoppi, G.; Forbes, I. [NPAC, Northumbria University, Newcastle upon Tyne, NE1 8ST (United Kingdom); Rogers, K.D.; Lane, D.W.; Hutchings, K.; Roncallo, S. [Centre for Material Science and Engineering, Cranfield University, Swindon, SN6 8LA (United Kingdom)

    2011-08-31

    Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeS{sub x} layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS{sub 2} after post growth sulphur (S) annealing of the FeS{sub x} layer between 400 deg. C and 500 deg. C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeS{sub x} layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeS{sub x} layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeS{sub x} interface due to S inter-diffusion during the annealing process.

  10. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  11. Energy Conversion at Micro and Nanoscale

    International Nuclear Information System (INIS)

    Gammaitoni, Luca

    2014-01-01

    Energy management is considered a task of strategic importance in contemporary society. It is a common fact that the most successful economies of the planet are the economies that can transform and use large quantities of energy. In this talk we will discuss the role of energy with specific attention to the processes that happens at micro and nanoscale. The description of energy conversion processes at these scales requires approaches that go way beyond the standard equilibrium termodynamics of macroscopic systems. In this talk we will address from a fundamental point of view the physics of the dissipation of energy and will focus our attention to the energy transformation processes that take place in the modern micro and nano information and communication devices

  12. Facilitation of Nanoscale Thermal Transport by Hydrogen Bonds

    OpenAIRE

    Zhang, Lin

    2017-01-01

    Thermal transport performance at the nanoscale and/or of biomaterials is essential to the success of many new technologies including nanoelectronics, biomedical devices, and various nanocomposites. Due to complicated microstructures and chemical bonding, thermal transport process in these materials has not been well understood yet. In terms of chemical bonding, it is well known that the strength of atomic bonding can significantly affect thermal transport across materials or across interfaces...

  13. Industrial fabrication of an optical security device for document protection using plasmon resonant transmission through a thin corrugated metallic film embedded on a plastic foil

    Science.gov (United States)

    Sauvage-Vincent, Jean; Jourlin, Yves; Tonchev, Svetlen; Veillas, Colette; Claude, Pedri; Parriaux, Olivier

    2012-06-01

    Known since a long time in polymer banknotes and presented in the few years in paper banknotes, the principle of windowed documents has been currently extended to ID documents. We present an innovative solution which combines resonant transmission and Zero Order Device technologies and which is dedicated to improve windows in terms of the overt security level. With this R&D program, Hologram Industries targeted to obtain an overt visual security device that should be readily checked in transmission in the same manner as the established paper watermark. The proposed solution is based on the propagation of resonant modes in a thin continuous corrugated metallic layer embedded (encapsulated) between two dielectric layers of near equal refractive index. The mode of most interest is the Long Range Plasmon Mode. The coupling condition to the Long Range Mode is principally related to the corrugation, the metal layer thickness and the index of the two dielectric layers. If the condition of the mode excitation through the grating is fulfilled, a predetermined wavelength will be coupled to the Long Range Plasmon Mode. This mode will propagate at each metal/dielectric interface with a low loss and will concentrate the electric field inside the metal layer. This effect of coupling enables the transmission of a peak at this wavelength through the metallic layer. It defines the so called "extraordinary resonant transmission".

  14. Systematic study of metal-insulator-metal diodes with a native oxide

    Science.gov (United States)

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-10-01

    In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  15. Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

    NARCIS (Netherlands)

    Bakker, F. L.; Slachter, A.; Adam, J-P; van Wees, B. J.

    2010-01-01

    We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third

  16. Nanoscale biomemory composed of recombinant azurin on a nanogap electrode

    International Nuclear Information System (INIS)

    Chung, Yong-Ho; Lee, Taek; Choi, Jeong-Woo; Park, Hyung Ju; Yun, Wan Soo; Min, Junhong

    2013-01-01

    We fabricate a nanoscale biomemory device composed of recombinant azurin on nanogap electrodes. For this, size-controllable nanogap electrodes are fabricated by photolithography, electron beam lithography, and surface catalyzed chemical deposition. Moreover, we investigate the effect of gap distance to optimize the size of electrodes for a biomemory device and explore the mechanism of electron transfer from immobilized protein to a nanogap counter-electrode. As the distance of the nanogap electrode is decreased in the nanoscale, the absolute current intensity decreases according to the distance decrement between the electrodes due to direct electron transfer, in contrast with the diffusion phenomenon of a micro-electrode. The biomemory function is achieved on the optimized nanogap electrode. These results demonstrate that the fabricated nanodevice composed of a nanogap electrode and biomaterials provides various advantages such as quantitative control of signals and exclusion of environmental effects such as noise. The proposed bioelectronics device, which could be mass-produced easily, could be applied to construct a nanoscale bioelectronics system composed of a single biomolecule. (paper)

  17. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    Science.gov (United States)

    Shahrjerdi, Davood; Bedell, Stephen W

    2013-01-09

    In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

  18. Nanoscale Characterization for the Classroom

    International Nuclear Information System (INIS)

    Carroll, D.L.

    1999-01-01

    This report describes the development of a semester course in 'nano-scale characterization'. The interdisciplinary course is opened to both advanced undergraduate and graduate students with a standard undergraduate preparation in Materials Science, Chemistry, or Physics. The approach is formal rather than the typical 'research seminar' and has a laboratory component

  19. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-01-01

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

  20. Nanoscale electromechanical parametric amplifier

    Science.gov (United States)

    Aleman, Benjamin Jose; Zettl, Alexander

    2016-09-20

    This disclosure provides systems, methods, and apparatus related to a parametric amplifier. In one aspect, a device includes an electron source electrode, a counter electrode, and a pumping electrode. The electron source electrode may include a conductive base and a flexible conductor. The flexible conductor may have a first end and a second end, with the second end of the flexible conductor being coupled to the conductive base. A cross-sectional dimension of the flexible conductor may be less than about 100 nanometers. The counter electrode may be disposed proximate the first end of the flexible conductor and spaced a first distance from the first end of the flexible conductor. The pumping electrode may be disposed proximate a length of the flexible conductor and spaced a second distance from the flexible conductor.

  1. Stacking metal nano-patterns and fabrication of moth-eye structure

    Science.gov (United States)

    Taniguchi, Jun

    2018-01-01

    Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

  2. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  3. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    Energy Technology Data Exchange (ETDEWEB)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Regan, William Raymond [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  4. Electron tunneling in nanoscale electrodes for battery applications

    Science.gov (United States)

    Yamada, Hidenori; Narayanan, Rajaram; Bandaru, Prabhakar R.

    2018-03-01

    It is shown that the electrical current that may be obtained from a nanoscale electrochemical system is sensitive to the dimensionality of the electrode and the density of states (DOS). Considering the DOS of lower dimensional systems, such as two-dimensional graphene, one-dimensional nanotubes, or zero-dimensional quantum dots, yields a distinct variation of the current-voltage characteristics. Such aspects go beyond conventional Arrhenius theory based kinetics which are often used in experimental interpretation. The obtained insights may be adapted to other devices, such as solid-state batteries. It is also indicated that electron transport in such devices may be considered through electron tunneling.

  5. Effectiveness of Devices to Monitor Biofouling and Metals Deposition on Plumbing Materials Exposed to a Full-Scale Drinking Water Distribution System.

    Science.gov (United States)

    Ginige, Maneesha P; Garbin, Scott; Wylie, Jason; Krishna, K C Bal

    2017-01-01

    A Modified Robbins Device (MRD) was installed in a full-scale water distribution system to investigate biofouling and metal depositions on concrete, high-density polyethylene (HDPE) and stainless steel surfaces. Bulk water monitoring and a KIWA monitor (with glass media) were used to offline monitor biofilm development on pipe wall surfaces. Results indicated that adenosine triphosphate (ATP) and metal concentrations on coupons increased with time. However, bacterial diversities decreased. There was a positive correlation between increase of ATP and metal deposition on pipe surfaces of stainless steel and HDPE and no correlation was observed on concrete and glass surfaces. The shared bacterial diversity between bulk water and MRD was less than 20% and the diversity shared between the MRD and KIWA monitor was only 10%. The bacterial diversity on biofilm of plumbing material of MRD however, did not show a significant difference suggesting a lack of influence from plumbing material during early stage of biofilm development.

  6. Effectiveness of Devices to Monitor Biofouling and Metals Deposition on Plumbing Materials Exposed to a Full-Scale Drinking Water Distribution System.

    Directory of Open Access Journals (Sweden)

    Maneesha P Ginige

    Full Text Available A Modified Robbins Device (MRD was installed in a full-scale water distribution system to investigate biofouling and metal depositions on concrete, high-density polyethylene (HDPE and stainless steel surfaces. Bulk water monitoring and a KIWA monitor (with glass media were used to offline monitor biofilm development on pipe wall surfaces. Results indicated that adenosine triphosphate (ATP and metal concentrations on coupons increased with time. However, bacterial diversities decreased. There was a positive correlation between increase of ATP and metal deposition on pipe surfaces of stainless steel and HDPE and no correlation was observed on concrete and glass surfaces. The shared bacterial diversity between bulk water and MRD was less than 20% and the diversity shared between the MRD and KIWA monitor was only 10%. The bacterial diversity on biofilm of plumbing material of MRD however, did not show a significant difference suggesting a lack of influence from plumbing material during early stage of biofilm development.

  7. Nanoscale intimacy in bifunctional catalysts for selective conversion of hydrocarbons

    Science.gov (United States)

    Zecevic, Jovana; Vanbutsele, Gina; de Jong, Krijn P.; Martens, Johan A.

    2015-12-01

    The ability to control nanoscale features precisely is increasingly being exploited to develop and improve monofunctional catalysts. Striking effects might also be expected in the case of bifunctional catalysts, which are important in the hydrocracking of fossil and renewable hydrocarbon sources to provide high-quality diesel fuel. Such bifunctional hydrocracking catalysts contain metal sites and acid sites, and for more than 50 years the so-called intimacy criterion has dictated the maximum distance between the two types of site, beyond which catalytic activity decreases. A lack of synthesis and material-characterization methods with nanometre precision has long prevented in-depth exploration of the intimacy criterion, which has often been interpreted simply as ‘the closer the better’ for positioning metal and acid sites. Here we show for a bifunctional catalyst—comprising an intimate mixture of zeolite Y and alumina binder, and with platinum metal controllably deposited on either the zeolite or the binder—that closest proximity between metal and zeolite acid sites can be detrimental. Specifically, the selectivity when cracking large hydrocarbon feedstock molecules for high-quality diesel production is optimized with the catalyst that contains platinum on the binder, that is, with a nanoscale rather than closest intimacy of the metal and acid sites. Thus, cracking of the large and complex hydrocarbon molecules that are typically derived from alternative sources, such as gas-to-liquid technology, vegetable oil or algal oil, should benefit especially from bifunctional catalysts that avoid locating platinum on the zeolite (the traditionally assumed optimal location). More generally, we anticipate that the ability demonstrated here to spatially organize different active sites at the nanoscale will benefit the further development and optimization of the emerging generation of multifunctional catalysts.

  8. Nanoscale capacitance: A quantum tight-binding model

    Science.gov (United States)

    Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

    2017-01-01

    Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

  9. Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

    Science.gov (United States)

    Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

    2017-02-08

    Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

  10. Investigation of Short Channel Effect on Vertical Structures in Nanoscale MOSFET

    Directory of Open Access Journals (Sweden)

    Munawar A. Riyadi

    2009-12-01

    Full Text Available The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel length (Lch is demonstrated with the help of numerical tools. The evaluation of short channel effect (SCE parameters, i.e. threshold voltage roll-off, subthreshold swing (SS, drain induced barrier lowering (DIBL and leakage current shows the considerable advantages as well as its thread-off in implementing the structure, in particular for nanoscale regime.

  11. Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation.

    Science.gov (United States)

    Dutta, Sourav; Zografos, Odysseas; Gurunarayanan, Surya; Radu, Iuliana; Soree, Bart; Catthoor, Francky; Naeemi, Azad

    2017-12-19

    Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent advances in plasmonic logic have witnessed the demonstration of basic and universal logic gates, these CMOS oriented digital logic gates cannot fully utilize the expressive power of this novel technology. Here, we aim at unraveling the true potential of plasmonics by exploiting an enhanced native functionality - the majority voter. Contrary to the state-of-the-art plasmonic logic devices, we use the phase of the wave instead of the intensity as the state or computational variable. We propose and demonstrate, via numerical simulations, a comprehensive scheme for building a nanoscale cascadable plasmonic majority logic gate along with a novel referencing scheme that can directly translate the information encoded in the amplitude and phase of the wave into electric field intensity at the output. Our MIM-based 3-input majority gate displays a highly improved overall area of only 0.636 μm 2 for a single-stage compared with previous works on plasmonic logic. The proposed device demonstrates non-Boolean computational capability and can find direct utility in highly parallel real-time signal processing applications like pattern recognition.

  12. Creating nanoscale emulsions using condensation.

    Science.gov (United States)

    Guha, Ingrid F; Anand, Sushant; Varanasi, Kripa K

    2017-11-08

    Nanoscale emulsions are essential components in numerous products, ranging from processed foods to novel drug delivery systems. Existing emulsification methods rely either on the breakup of larger droplets or solvent exchange/inversion. Here we report a simple, scalable method of creating nanoscale water-in-oil emulsions by condensing water vapor onto a subcooled oil-surfactant solution. Our technique enables a bottom-up approach to forming small-scale emulsions. Nanoscale water droplets nucleate at the oil/air interface and spontaneously disperse within the oil, due to the spreading dynamics of oil on water. Oil-soluble surfactants stabilize the resulting emulsions. We find that the oil-surfactant concentration controls the spreading behavior of oil on water, as well as the peak size, polydispersity, and stability of the resulting emulsions. Using condensation, we form emulsions with peak radii around 100 nm and polydispersities around 10%. This emulsion formation technique may open different routes to creating emulsions, colloidal systems, and emulsion-based materials.

  13. Solvothermal Synthesis of One-Dimensional Transition Metal Doped ZnO Nanocrystals and Their Applications in Smart Window Devices

    OpenAIRE

    Šutka, A; Timusk, M; Kisand, V; Saal, K; Joost, U; Lõhmus, R

    2015-01-01

    Oxide semiconductor nanowire (NW) suspension based devices have been attracted growing interest in smart window applications due to their great controllability of light transmittance, simplicity and long term stability. Recently, we demonstrated smart window device using the suspension of electrospun TiO2 or solvothermally synthesized ZnO NWs in viscous polydimethylsiloxane (PDMS) matrix. The operating principle of the oxide semiconductor NW and PDMS device is based on the alterable orientati...

  14. Electron transport in nano-scaled piezoelectronic devices

    Science.gov (United States)

    Jiang, Zhengping; Kuroda, Marcelo A.; Tan, Yaohua; Newns, Dennis M.; Povolotskyi, Michael; Boykin, Timothy B.; Kubis, Tillmann; Klimeck, Gerhard; Martyna, Glenn J.

    2013-05-01

    The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via the expansion of a relaxor piezoelectric element to turn the device on. The mixed-valence compound SmSe is a good choice of PET channel material because of its isostructural pressure-induced continuous metal insulator transition, which is well characterized in bulk single crystals. Prediction and optimization of the performance of a realistic, nano-scaled PET based on SmSe requires the understanding of quantum confinement, tunneling, and the effect of metal interface. In this work, a computationally efficient empirical tight binding (ETB) model is developed for SmSe to study quantum transport in these systems and the scaling limit of PET channel lengths. Modulation of the SmSe band gap under pressure is successfully captured by ETB, and ballistic conductance shows orders of magnitude change under hydrostatic strain, supporting operability of the PET device at nanoscale.

  15. Brillouin gain enhancement in nano-scale photonic waveguide

    Science.gov (United States)

    Nouri Jouybari, Soodabeh

    2018-05-01

    The enhancement of stimulated Brillouin scattering in nano-scale waveguides has a great contribution in the improvement of the photonic devices technology. The key factors in Brillouin gain are the electrostriction force and radiation pressure generated by optical waves in the waveguide. In this article, we have proposed a new scheme of nano-scale waveguide in which the Brillouin gain is considerably improved compared to the previously-reported schemes. The role of radiation pressure in the Brillouin gain was much higher than the role of the electrostriction force. The Brillouin gain strongly depends on the structural parameters of the waveguide and the maximum value of 12127 W-1 m-1 is obtained for the Brillouin gain.

  16. Negative pressure characteristics of an evaporating meniscus at nanoscale

    Directory of Open Access Journals (Sweden)

    Maroo Shalabh

    2011-01-01

    Full Text Available Abstract This study aims at understanding the characteristics of negative liquid pressures at the nanoscale using molecular dynamics simulation. A nano-meniscus is formed by placing liquid argon on a platinum wall between two nano-channels filled with the same liquid. Evaporation is simulated in the meniscus by increasing the temperature of the platinum wall for two different cases. Non-evaporating films are obtained at the center of the meniscus. The liquid film in the non-evaporating and adjacent regions is found to be under high absolute negative pressures. Cavitation cannot occur in these regions as the capillary height is smaller than the critical cavitation radius. Factors which determine the critical film thickness for rupture are discussed. Thus, high negative liquid pressures can be stable at the nanoscale, and utilized to create passive pumping devices as well as significantly enhance heat transfer rates.

  17. Spin injection and transport in semiconductor and metal nanostructures

    Science.gov (United States)

    Zhu, Lei

    In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

  18. Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung; King, Glen C.; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

    2011-01-01

    Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

  19. EDITORIAL: Physical behaviour at the nanoscale: a model for fertile research Physical behaviour at the nanoscale: a model for fertile research

    Science.gov (United States)

    Demming, Anna

    2013-06-01

    Nature 453 80-3 [10] Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N and Williams R S 2009 The mechanism of electroforming of metal oxide memristive switches Nanotechnology 20 215201 [11] Seo K, Kim I, Jung S, Jo M, Park S, Park J, Shin J and Hwang H 2011 Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device Nanotechnology 22 254023

  20. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

    Science.gov (United States)

    Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

    2017-01-01

    Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  1. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

    Directory of Open Access Journals (Sweden)

    Landon J. Brower

    2017-11-01

    Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  2. Nanoscale methods for single-molecule electrochemistry.

    Science.gov (United States)

    Mathwig, Klaus; Aartsma, Thijs J; Canters, Gerard W; Lemay, Serge G

    2014-01-01

    The development of experiments capable of probing individual molecules has led to major breakthroughs in fields ranging from molecular electronics to biophysics, allowing direct tests of knowledge derived from macroscopic measurements and enabling new assays that probe population heterogeneities and internal molecular dynamics. Although still somewhat in their infancy, such methods are also being developed for probing molecular systems in solution using electrochemical transduction mechanisms. Here we outline the present status of this emerging field, concentrating in particular on optical methods, metal-molecule-metal junctions, and electrochemical nanofluidic devices.

  3. Superductile bulk metallic glass

    International Nuclear Information System (INIS)

    Yao, K.F.; Ruan, F.; Yang, Y.Q.; Chen, N.

    2006-01-01

    Usually, monolithic bulk metallic glasses undergo inhomogeneous plastic deformation and exhibit poor ductility (<2%) at room temperature. We report a newly developed Pd-Si binary bulk metallic glass, which exhibits a uniform plastic deformation and a large plastic engineering strain of 82% and a plastic true strain of 170%, together with initial strain hardening, slight strain softening and final strain hardening characteristics. The uniform shear deformation and the ultrahigh plasticity are mainly attributed to strain hardening, which results from the nanoscale inhomogeneity due to liquid phase separation. The formed nanoscale inhomogeneity will hinder, deflect, and bifurcate the propagation of shear bands

  4. Analytical TEM investigations of nanoscale magnetic materials

    International Nuclear Information System (INIS)

    Meingast, A.

    2015-01-01

    element identification or, an absolute quantification is possible. Moreover, the parallel acquisition of EDXS and EELS signals allows combining the strength of each respective technique. A careful and precise sample preparation is crucial and knowledge and suitable methods had to be developed. Preparation induced modifications of the investigated material was minimized by identifying changes to the material during thinning to electron transparency. Reducing surface amorphization of TEM specimens and moreover identifying and quantifying surface oxidation was an important factor. Questions regarding the structural architecture of three diverse magnetic materials down to the atomic level have been addressed, and elemental distributions have been determined quantitatively. The first part of the results treats structural and analytical results of crystalline nanocubes. These cubes have dimensions below 30 nm, and represent a class of materials to exploit magnetic exchange coupling on a nanometer scale. Knowledge about the elemental distribution on a nanometer basis within a nanocube is necessary to tailor the magnetic properties. Analytical investigations deal with the determination of the oxidation state of iron oxide reference nanocrystals and the elemental distribution within a multi-component system. Transition metal doped gallium nitride (GaN) falling into the class of dilute magnetic semiconductors was investigated by various high resolution imaging techniques and spectroscopic methods for resolving morphologies and dopant concentrations. The doping of GaN is intended to provide additional magnetic functionalities to the semiconducting material used for future spintronic devices. Quantitative EELS measurements resolved that Mn was incorporated either in a homogeneous way or added to GaN in a pulsed way, leading to a layered doping. Iron was used as another potential dopant for GaN. Hereby specific growth procedures enabled the formation of a layer of iron

  5. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.

    2015-01-01

    reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization

  6. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. 2D Quantum Mechanical Study of Nanoscale MOSFETs

    Science.gov (United States)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

    2000-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  8. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    Science.gov (United States)

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  9. Nanoscale Thermoelectrics: A Study of the Absolute Seebeck Coefficient of Thin Films

    Science.gov (United States)

    Mason, Sarah J.

    The worlds demand for energy is ever increasing. Likewise, the environmental impact of climate change due generating that energy through combustion of fossil fuels is increasingly alarming. Due to these factors new sources of renewable energies are constantly being sought out. Thermoelectric devices have the ability to generate clean, renewable, energy out of waste heat. However promising that is, their inefficiency severely inhibits applicability and practical use. The usefulness of a thermoelectric material increases with the dimensionless quantity, ZT, which depends on the Seebeck coefficient and electrical and thermal conductivity. These characteristic material parameters have interdependent energy transport contributions that classically prohibit the optimization of one with out the detriment of another. Encouraging advancements of ZT have occurred in the past ten years due to the decoupling of the thermal and electrical conductivity. Further advancements are necessary in order to produce applicable devices. One auspicious way of decoupling or tuning energy transport properties, is through size reduction to the nanoscale. However, with reduced dimensions come complications in measuring material properties. Measurements of properties such as the Seebeck coefficient, S, are primarily contingent upon the measurement apparatus. The Seebeck coefficient is defined as the amount of voltage generated by a thermal gradient. Measuring a thermally generated voltage by traditional methods gives, the voltage measured as a linear function of the Seebeck coefficient of the leads and of the material being tested divided by the applied thermal gradient. If accurate values of the Seebeck coefficients of the leads are available, simple subtraction provides the answer. This is rarely the case in nanoscale measurement devices with leads exclusively made from thin film materials that do not have well known bulk-like thermopower values. We have developed a technique to directly

  10. Investigation of graphene-based nanoscale radiation sensitive materials

    Science.gov (United States)

    Robinson, Joshua A.; Wetherington, Maxwell; Hughes, Zachary; LaBella, Michael, III; Bresnehan, Michael

    2012-06-01

    Current state-of-the-art nanotechnology offers multiple benefits for radiation sensing applications. These include the ability to incorporate nano-sized radiation indicators into widely used materials such as paint, corrosion-resistant coatings, and ceramics to create nano-composite materials that can be widely used in everyday life. Additionally, nanotechnology may lead to the development of ultra-low power, flexible detection systems that can be embedded in clothing or other systems. Graphene, a single layer of graphite, exhibits exceptional electronic and structural properties, and is being investigated for high-frequency devices and sensors. Previous work indicates that graphene-oxide (GO) - a derivative of graphene - exhibits luminescent properties that can be tailored based on chemistry; however, exploration of graphene-oxide's ability to provide a sufficient change in luminescent properties when exposed to gamma or neutron radiation has not been carried out. We investigate the mechanisms of radiation-induced chemical modifications and radiation damage induced shifts in luminescence in graphene-oxide materials to provide a fundamental foundation for further development of radiation sensitive detection architectures. Additionally, we investigate the integration of hexagonal boron nitride (hBN) with graphene-based devices to evaluate radiation induced conductivity in nanoscale devices. Importantly, we demonstrate the sensitivity of graphene transport properties to the presence of alpha particles, and discuss the successful integration of hBN with large area graphene electrodes as a means to provide the foundation for large-area nanoscale radiation sensors.

  11. Emerging Science and Research Opportunities for Metals and Metallic Nanostructures

    Science.gov (United States)

    Handwerker, Carol A.; Pollock, Tresa M.

    2014-07-01

    During the next decade, fundamental research on metals and metallic nanostructures (MMNs) has the potential to continue transforming metals science into innovative materials, devices, and systems. A workshop to identify emerging and potentially transformative research areas in MMNs was held June 13 and 14, 2012, at the University of California Santa Barbara. There were 47 attendees at the workshop (listed in the Acknowledgements section), representing a broad range of academic institutions, industry, and government laboratories. The metals and metallic nanostructures (MMNs) workshop aimed to identify significant research trends, scientific fundamentals, and recent breakthroughs that can enable new or enhanced MMN performance, either alone or in a more complex materials system, for a wide range of applications. Additionally, the role that MMN research can play in high-priority research and development (R&D) areas such as the U.S. Materials Genome Initiative, the National Nanotechnology Initiative, the Advanced Manufacturing Initiative, and other similar initiatives that exist internationally was assessed. The workshop also addressed critical issues related to materials research instrumentation and the cyberinfrastructure for materials science research and education, as well as science, technology, engineering, and mathematics (STEM) workforce development, with emphasis on the United States but with an appreciation that similar challenges and opportunities for the materials community exist internationally. A central theme of the workshop was that research in MMNs has provided and will continue to provide societal benefits through the integration of experiment, theory, and simulation to link atomistic, nanoscale, microscale, and mesoscale phenomena across time scales for an ever-widening range of applications. Within this overarching theme, the workshop participants identified emerging research opportunities that are categorized and described in more detail in the

  12. Development of a novel device to trap heavy metal cations: application of the specific interaction between heavy metal cation and mismatch DNA base pair.

    Science.gov (United States)

    Torigoe, Hidetaka; Miyakawa, Yukako; Fukushi, Miyako; Ono, Akira; Kozasa, Tetsuo

    2009-01-01

    We have already found that Hg(II) cation specifically binds to T:T mismatch base pair in heteroduplex DNA, which increases the melting temperature of heteroduplex DNA involving T:T mismatch base pair by about 4 degrees C. We have also found that Ag(I) cation specifically binds to C:C mismatch base pair in heteroduplex DNA, which increases the melting temperature of heteroduplex DNA involving C:C mismatch base pair by about 4 degrees C. Using the specific interaction, we developed a novel device to trap each of Hg(II) and Ag(I) cation. The device is composed of 5'-biotinylated T-rich or C-rich DNA oligonucleotides, BIO-T20: 5'-Bio-T(20)-3' or BIO-C20: 5'-Bio-C(20)-3' (Bio is a biotin), immobilized on streptavidin-coated polystylene beads. When the BIO-T20-immobilized beads were added to a solution containing Hg(II) cation, and the beads trapping Hg(II) cation were collected by centrifugation, almost all of Hg(II) cation were removed from the solution. Also, when the BIO-C20-immobilized beads were added to a solution containing Ag(I) cation, and the beads trapping Ag(I) cation were collected by centrifugation, almost all of Ag(I) cation were removed from the solution. We conclude that, using the novel device developed in this study, Hg(II) and Ag(I) cation can be effectively removed from the solution.

  13. Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

    Science.gov (United States)

    Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

    2016-07-21

    Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

  14. Nanoscale Engineering of Multiferroic Hybrid Composites for Micro- and Nano-scale Devices

    Science.gov (United States)

    2012-09-14

    presented in Fig.1. In the case of laminate structures we proposed to use AIN as a piezoelectric phase [publication 4]. Although commonly used Pb...16-19, 2009, Zhengzhou, China. 30)L. Malkinski, "Magnetic heterostructures with convoluted architectures" (invited) 7th Workshop on Multifunction

  15. Liquid metals as a divertor plasma-facing material explored using the Pilot-PSI and Magnum-PSI linear devices

    Science.gov (United States)

    Morgan, T. W.; Rindt, P.; van Eden, G. G.; Kvon, V.; Jaworksi, M. A.; Lopes Cardozo, N. J.

    2018-01-01

    For DEMO and beyond, liquid metal plasma-facing components are considered due to their resilience to erosion through flowed replacement, potential for cooling beyond conduction and inherent immunity to many of the issues of neutron loading compared to solid materials. The development curve of liquid metals is behind that of e.g. tungsten however, and tokamak-based research is currently somewhat limited in scope. Therefore, investigation into linear plasma devices can provide faster progress under controlled and well-diagnosed conditions in assessing many of the issues surrounding the use of liquid metals. The linear plasma devices Magnum-PSI and Pilot-PSI are capable of producing DEMO-relevant plasma fluxes, which well replicate expected divertor conditions, and the exploration of physics issues for tin (Sn) and lithium (Li) such as vapour shielding, erosion under high particle flux loading and overall power handling are reviewed here. A deeper understanding of erosion and deposition through this work indicates that stannane formation may play an important role in enhancing Sn erosion, while on the other hand the strong hydrogen isotope affinity reduces the evaporation rate and sputtering yields for Li. In combination with the strong redeposition rates, which have been observed under this type of high-density plasma, this implies that an increase in the operational temperature range, implying a power handling range of 20-25 MW m-2 for Sn and up to 12.5 MW m-2 for Li could be achieved. Vapour shielding may be expected to act as a self-protection mechanism in reducing the heat load to the substrate for off-normal events in the case of Sn, but may potentially be a continual mode of operation for Li.

  16. In Situ TEM Creation and Electrical Characterization of Nanowire Devices

    DEFF Research Database (Denmark)

    Kallesøe, Christian; Wen, Cheng-Yen; Booth, Timothy J.

    2012-01-01

    bridge devices in situ and relate these to the structure. We also describe processes to modify the contact and the nanowire surface after device formation. The technique we describe allows the direct analysis of the processes taking place during device formation and use, correlating specific nanoscale......We demonstrate the observation and measurement of simple nanoscale devices over their complete lifecycle from creation to failure within a transmission electron microscope. Devices were formed by growing Si nanowires, using the vapor–liquid–solid method, to form bridges between Si cantilevers. We...... structural and electrical parameters on an individual device basis....

  17. Microfluidic paper-based device for colorimetric determination of glucose based on a metal-organic framework acting as peroxidase mimetic.

    Science.gov (United States)

    Ortiz-Gómez, Inmaculada; Salinas-Castillo, Alfonso; García, Amalia García; Álvarez-Bermejo, José Antonio; de Orbe-Payá, Ignacio; Rodríguez-Diéguez, Antonio; Capitán-Vallvey, Luis Fermín

    2017-12-13

    This work presents a microfluidic paper-based analytical device (μPAD) for glucose determination using a supported metal-organic framework (MOF) acting as a peroxidase mimic. The catalytic action of glucose oxidase (GOx) on glucose causes the formation of H 2 O 2 , and the MOF causes the oxidation of 3,3',5,5'-tetramethylbenzidine (TMB) by H 2 O 2 to form a blue-green product with an absorption peak at 650 nm in the detection zone. A digital camera and the iOS feature of a smartphone are used for the quantitation of glucose with the S coordinate of the HSV color space as the analytical parameter. Different factors such as the concentration of TMB, GOx and MOF, pH and buffer, sample volume, reaction time and reagent position in the μPAD were optimized. Under optimal conditions, the value for the S coordinate increases linearly up to 150 μmol·L -1 glucose concentrations, with a 2.5 μmol·L -1 detection limit. The μPAD remains stable for 21 days under conventional storage conditions. Such an enzyme mimetic-based assay to glucose determination using Fe-MIL-101 MOF implemented in a microfluidic paper-based device possesses advantages over enzyme-based assays in terms of costs, durability and stability compared to other existing glucose determination methods. The procedure was applied to the determination of glucose in (spiked) serum and urine. Graphical abstract Schematic representation of microfluidic paper-based analytical device using metal-organic framework as a peroxidase mimic for colorimetric glucose detection with digital camera or smartphone and iOS app readout.

  18. Nanostructured metal-polyaniline composites

    Science.gov (United States)

    Wang, Hsing-Lin; Li, Wenguang; Bailey, James A.; Gao, Yuan

    2010-08-31

    Metal-polyaniline (PANI) composites are provided together with a process of preparing such composites by an electrodeless process. The metal of the composite can have nanoscale structural features and the composites can be used in applications such as catalysis for hydrogenation reactions and for analytical detection methods employing SERS.

  19. Nanoscale biophysics of the cell

    CERN Document Server

    Ashrafuzzaman, Mohammad

    2018-01-01

    Macroscopic cellular structures and functions are generally investigated using biological and biochemical approaches. But these methods are no longer adequate when one needs to penetrate deep into the small-scale structures and understand their functions. The cell is found to hold various physical structures, molecular machines, and processes that require physical and mathematical approaches to understand and indeed manipulate them. Disorders in general cellular compartments, perturbations in single molecular structures, drug distribution therein, and target specific drug-binding, etc. are mostly physical phenomena. This book will show how biophysics has revolutionized our way of addressing the science and technology of nanoscale structures of cells, and also describes the potential for manipulating the events that occur in them.

  20. Nanoscale Mixing of Soft Solids

    International Nuclear Information System (INIS)

    Choi, Soo-Hyung; Lee, Sangwoo; Soto, Haidy E.; Lodge, Timothy P.; Bates, Frank S.

    2011-01-01

    Assessing the state of mixing on the molecular scale in soft solids is challenging. Concentrated solutions of micelles formed by self-assembly of polystyrene-block-poly(ethylene-alt-propylene) (PS-PEP) diblock copolymers in squalane (C 30 H 62 ) adopt a body-centered cubic (bcc) lattice, with glassy PS cores. Utilizing small-angle neutron scattering (SANS) and isotopic labeling ( 1 H and 2 H (D) polystyrene blocks) in a contrast-matching solvent (a mixture of squalane and perdeuterated squalane), we demonstrate quantitatively the remarkable fact that a commercial mixer can create completely random mixtures of micelles with either normal, PS(H), or deuterium-labeled, PS(D), cores on a well-defined bcc lattice. The resulting SANS intensity is quantitatively modeled by the form factor of a single spherical core. These results demonstrate both the possibility of achieving complete nanoscale mixing in a soft solid and the use of SANS to quantify the randomness.

  1. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Science.gov (United States)

    Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

    2008-03-01

    The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

  2. Localized temperature and chemical reaction control in nanoscale space by nanowire array.

    Science.gov (United States)

    Jin, C Yan; Li, Zhiyong; Williams, R Stanley; Lee, K-Cheol; Park, Inkyu

    2011-11-09

    We introduce a novel method for chemical reaction control with nanoscale spatial resolution based on localized heating by using a well-aligned nanowire array. Numerical and experimental analysis shows that each individual nanowire could be selectively and rapidly Joule heated for local and ultrafast temperature modulation in nanoscale space (e.g., maximum temperature gradient 2.2 K/nm at the nanowire edge; heating/cooling time chemical reactions such as polymer decomposition/cross-linking and direct and localized hydrothermal synthesis of metal oxide nanowires were demonstrated.

  3. Charge-flow structures as polymeric early-warning fire alarm devices. M.S. Thesis; [metal oxide semiconductors

    Science.gov (United States)

    Sechen, C. M.; Senturia, S. D.

    1977-01-01

    The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

  4. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    Science.gov (United States)

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  5. Direct-write fabrication of a nanoscale digital logic element on a single nanowire

    International Nuclear Information System (INIS)

    Roy, Somenath; Gao Zhiqiang

    2010-01-01

    In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.

  6. Sensor devices comprising a metal-organic framework material and methods of making and using the same

    Science.gov (United States)

    Wang, Alan X.; Chang, Chih-hung; Kim, Ki-Joong; Chong, Xinyuan; Ohodnicki, Paul R.

    2018-05-29

    Disclosed herein are embodiments of sensor devices comprising a sensing component able to determine the presence of, detect, and/or quantify detectable species in a variety of environments and applications. The sensing components disclosed herein can comprise MOF materials, plasmonic nanomaterials, or combinations thereof. In an exemplary embodiment, light guides can be coupled with the sensing components described herein to provide sensor devices capable of increased NIR detection sensitivity in determining the presence of detectable species, such as gases and volatile organic compounds. In another exemplary embodiment, optical properties of the plasmonic nanomaterials combined with MOF materials can be monitored directly to detect analyte species through their impact on external conditions surrounding the particle or as a result of charge transfer to and from the plasmonic material as a result of interactions with the plasmonic material and/or the MOF material.

  7. Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

    Energy Technology Data Exchange (ETDEWEB)

    Herderick, Edward D; Padture, Nitin P [Department of Materials Science and Engineering, Center for Emergent Materials, Ohio State University, Columbus, OH 43210 (United States); Polomoff, Nicholas A; Huey, Bryan D, E-mail: padture.1@osu.edu [Department of Chemical, Materials, and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

    2010-08-20

    A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO{sub 3}-Au and Au-PbTiO{sub 3}-Au. This method entails electrodeposition of segmented nanowires of Au-TiO{sub 2}-Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO{sub 2} segments into BaTiO{sub 3} or PbTiO{sub 3} segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

  8. Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

    International Nuclear Information System (INIS)

    Herderick, Edward D; Padture, Nitin P; Polomoff, Nicholas A; Huey, Bryan D

    2010-01-01

    A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO 3 -Au and Au-PbTiO 3 -Au. This method entails electrodeposition of segmented nanowires of Au-TiO 2 -Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO 2 segments into BaTiO 3 or PbTiO 3 segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

  9. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  10. Sealing devices

    International Nuclear Information System (INIS)

    Coulson, R.A.

    1980-01-01

    A sealing device for minimising the leakage of toxic or radioactive contaminated environments through a biological shield along an opening through which a flexible component moves that penetrates the shield. The sealing device comprises an outer tubular member which extends over a length not less than the maximum longitudinal movement of the component along the opening. An inner sealing block is located intermediate the length of the component by connectors and is positioned in the bore of the outer tubular member to slide in the bore and effect a seal over the entire longitudinal movement of the component. The cross-section of the device may be circular and the block may be of polytetrafluoroethylene or of nylon impregnated with molybdenum or may be metallic. A number of the sealing devices may be combined into an assembly for a plurality of adjacent longitudinally movable components, each adapted to sustain a tensile load, providing the various drives of a master-slave manipulator. (author)

  11. Smart Core-Shell Nanowire Architectures for Multifunctional Nanoscale Devices

    Science.gov (United States)

    2014-02-16

    E. Spanier, S. J. May. Optical absorption in epitaxial La [sub 1?x]Sr [sub x]FeO[sub 3] thin films, Applied Physics Letters, (02 2013): 0. doi...Coster, Gregory R. Soja , Craig L. Johnson, Rahul S. Joseph, Jonathan E. Spanier. Piezoresponse through a ferroelectric nanotube wall, Applied...20.00 Received Paper Y. J. Xie, M. Torres, J. E. Spanier, S. J. May, M D. Scafetta. Optical absorption in epitaxial La [sub 1?x]Sr [sub x]FeO[sub 3

  12. In Situ TEM Creation of Nanowire Devices

    DEFF Research Database (Denmark)

    Alam, Sardar Bilal

    Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

  13. Symposium GC: Nanoscale Charge Transport in Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bommisetty, Venkat [Univ. of South Dakota, Vermillion, SD (United States)

    2011-06-23

    This paper provides a summary only and table of contents of the sessions. Excitonic solar cells, including all-organic, hybrid organic-inorganic and dye-sensitized solar cells (DSSCs), offer strong potential for inexpensive and large-area solar energy conversion. Unlike traditional inorganic semiconductor solar cells, where all the charge generation and collection processes are well understood, these excitonic solar cells contain extremely disordered structures with complex interfaces which results in large variations in nanoscale electronic properties and has a strong influence on carrier generation, transport, dissociation and collection. Detailed understanding of these processes is important for fabrication of highly efficient solar cells. Efforts to improve efficiency are underway at a large number of research groups throughout the world focused on inorganic and organic semiconductors, photonics, photophysics, charge transport, nanoscience, ultrafast spectroscopy, photonics, semiconductor processing, device physics, device structures, interface structure etc. Rapid progress in this multidisciplinary area requires strong synergetic efforts among researchers from diverse backgrounds. Such effort can lead to novel methods for development of new materials with improved photon harvesting and interfacial treatments for improved carrier transport, process optimization to yield ordered nanoscale morphologies with well defined electronic structures.

  14. Anomalous electromagnetic coupling via entanglement at the nanoscale

    International Nuclear Information System (INIS)

    Slepyan, Gregory; Boag, Amir; Mordachev, Vladimir; Sinkevich, Eugene; Maksimenko, Sergey; Kuzhir, Polina; Miano, Giovanni; Portnoi, Mikhail E; Maffucci, Antonio

    2017-01-01

    Understanding unwanted mutual interactions between devices at the nanoscale is crucial for the study of the electromagnetic compatibility in nanoelectronic and nanophotonic systems. Anomalous electromagnetic coupling (crosstalk) between nanodevices may arise from the combination of electromagnetic interaction and quantum entanglement. In this paper we study in detail the crosstalk between two identical nanodevices, each consisting of a quantum emitter (atom, quantum dot, etc), capacitively coupled to a pair of nanoelectrodes. Using the generalized susceptibility concept, the overall system is modeled as a two-port within the framework of the electrical circuit theory and it is characterized by the admittance matrix. We show that the entanglement changes dramatically the physical picture of the electromagnetic crosstalk. In particular, the excitation produced in one of the ports may be redistributed in equal parts between both the ports, in spite of the rather small electromagnetic interactions. Such an anomalous crosstalk is expected to appear at optical frequencies in lateral GaAs double quantum dots. A possible experimental set up is also discussed. The classical concepts of interference in the operation of electronic devices, which have been known since the early days of radio-communications and are associated with electromagnetic compatibility, should then be reconsidered at the nanoscale. (paper)

  15. Nanoscale layer-selective readout of magnetization direction from a magnetic multilayer using a spin-torque oscillator

    International Nuclear Information System (INIS)

    Suto, Hirofumi; Nagasawa, Tazumi; Kudo, Kiwamu; Mizushima, Koichi; Sato, Rie

    2014-01-01

    Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions. Here we introduce a novel readout method for detecting the magnetization direction of a nanoscale magnet by use of a spin-torque oscillator (STO). The principles behind this method are dynamic dipolar coupling between an STO and a nanoscale magnet, and detection of ferromagnetic resonance (FMR) of this coupled system from the STO signal. Because the STO couples with a specific magnet by tuning the STO oscillation frequency to match its FMR frequency, this readout method can selectively determine the magnetization direction of the magnet. (papers)

  16. Revealing Nanoscale Passivation and Corrosion Mechanisms of Reactive Battery Materials in Gas Environments.

    Science.gov (United States)

    Li, Yuzhang; Li, Yanbin; Sun, Yongming; Butz, Benjamin; Yan, Kai; Koh, Ai Leen; Zhao, Jie; Pei, Allen; Cui, Yi

    2017-08-09

    Lithium (Li) metal is a high-capacity anode material (3860 mAh g -1 ) that can enable high-energy batteries for electric vehicles and grid-storage applications. However, Li metal is highly reactive and repeatedly consumed when exposed to liquid electrolyte (during battery operation) or the ambient environment (throughout battery manufacturing). Studying these corrosion reactions on the nanoscale is especially difficult due to the high chemical reactivity of both Li metal and its surface corrosion films. Here, we directly generate pure Li metal inside an environmental transmission electron microscope (TEM), revealing the nanoscale passivation and corrosion process of Li metal in oxygen (O 2 ), nitrogen (N 2 ), and water vapor (H 2 O). We find that while dry O 2 and N 2 (99.9999 vol %) form uniform passivation layers on Li, trace water vapor (∼1 mol %) disrupts this passivation and forms a porous film on Li metal that allows gas to penetrate and continuously react with Li. To exploit the self-passivating behavior of Li in dry conditions, we introduce a simple dry-N 2 pretreatment of Li metal to form a protective layer of Li nitride prior to battery assembly. The fast ionic conductivity and stable interface of Li nitride results in improved battery performance with dendrite-free cycling and low voltage hysteresis. Our work reveals the detailed process of Li metal passivation/corrosion and demonstrates how this mechanistic insight can guide engineering solutions for Li metal batteries.

  17. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  18. Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saikat [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Wang, Bo [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Cao, Ye [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for; Rae Cho, Myung [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Jae Shin, Yeong [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Mo Yang, Sang [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Sookmyung Women' s Univ., Seoul (Republic of Korea). Dept. of Physics; Wang, Lingfei [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kim, Minu [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials; Chen, Long-Qing [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Noh, Tae Won [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy

    2017-09-20

    Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implications for device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. Finally, the ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena and engineering multifunctional oxide devices.

  19. Nanoscale electron transport at the surface of a topological insulator

    Science.gov (United States)

    Bauer, Sebastian; Bobisch, Christian A.

    2016-04-01

    The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

  20. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.