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Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Golnaz Karbasian

2017-03-01

Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.
Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

International Nuclear Information System (INIS)

Zhou, Y.M.; He, M.Z.; Xie, Z.

2014-01-01

Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si
Computational investigation of the effects of barrier layers on the permeation of hydrogen through metals

International Nuclear Information System (INIS)

Perkins, W.G.

1975-01-01

Results of a computational investigation of the permeation behavior of oxide-coated metal membranes are presented. A steady-state permeation model was developed which promises to be useful in evaluation of oxide layers on metals as hydrogen permeation barriers. The pressure and thickness dependence of steady state permeation through oxide-coated metal membranes is described using plots of logarithmic functions. (U.S.)
Barrier layer arrangement for conductive layers on silicon substrates

International Nuclear Information System (INIS)

Hung, L.S.; Agostinelli, J.A.

1990-01-01

This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide
Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

Science.gov (United States)

Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

2015-05-01

Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Enhancement of seeding for electroless Cu plating of metallic barrier layers by using alkyl self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Chen, Sung-Te [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chung, Yu-Cheng [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Fang, Jau-Shiung [Department of Materials Science and Engineering, National Formosa University, Huwei 632, Taiwan (China); Cheng, Yi-Lung [Department of Electrical Engineering, National Chi-Nan University, Puli, Nantou 545, Taiwan (China); Chen, Giin-Shan, E-mail: gschen@fcu.edu.tw [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China)

2017-05-31

Highlights: • Ta barrier layers are used as model substrates for seeding of electroless plating. • Ta layers seeded with Ta-OH yield seeds with limited density and large size (>10 nm). • Substantial improvement of seeding is obtained with functionalized SAMs. • The mechanism of seeding improvement by functionalized SAMs is clearly clarified. - Abstract: Tethering a self-assembled monolayer (SAM) on ultralow-k (porous) dielectric materials as a seed-trapping layer for electroless Cu plating has been extensively studied. By contrast, literature on direct electroless Cu plating of metallic barrier layers assisted by SAMs is scarce. Therefore, Ta, a crucial component of barrier materials for Cu interconnect metallization, was investigated as a model substrate for a new seeding (Ni catalyst formation) process of electroless Cu plating. Transmission and scanning electron microscopies indicated that catalytic particles formed on Ta films through Ta−OH groups tend to become aggregates with an average size of 14 nm and density of 2 × 10{sup 15} m{sup −2}. By contrast, Ta films with a plasma-functionalized SAM tightly bound catalytic particles without agglomeration, thus yielding a markedly smaller size (3 nm) and higher density (3 × 10{sup 16} m{sup −2}; one order greater than those formed by other novel methods). X-ray photoelectron spectroscopy clearly identified the types of material species and functional groups induced at each step of the seeding process. Moreover, the phase of the catalytic particles, either nickel alkoxide, Ni(OH){sub 2}, or metallic Ni, along with the seed-bonding mechanism, was also unambiguously distinguished. The enhancement of film-formation quality of Cu by the new seeding process was thus demonstrated.
Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

CERN Document Server

Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

2002-01-01

Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...
Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Science.gov (United States)

Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

2003-06-01

The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.
Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

International Nuclear Information System (INIS)

Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

2003-01-01

The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min
Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

International Nuclear Information System (INIS)

Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

2014-01-01

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.
How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

International Nuclear Information System (INIS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-01-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium–nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (∼2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs. (paper)
How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Science.gov (United States)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.
Barrier Coatings for Refractory Metals and Superalloys

Energy Technology Data Exchange (ETDEWEB)

SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

2006-02-23

In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life.
Barrier Coatings for Refractory Metals and Superalloys

International Nuclear Information System (INIS)

SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

2006-01-01

In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life
Potential barrier heights at metal on oxygen-terminated diamond interfaces

Energy Technology Data Exchange (ETDEWEB)

Muret, P., E-mail: pierre.muret@neel.cnrs.fr; Traoré, A.; Maréchal, A.; Eon, D. [Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble, France and CNRS, Inst. NEEL, F-38042 Grenoble (France); Pernot, J. [Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, (France); CNRS, Inst. NEEL, F-38042 Grenoble, (France); Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris (France); Pinero, J. C.; Villar, M. P.; Araujo, D., E-mail: daniel.araujo@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2015-11-28

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO{sub 2} deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.
Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

Energy Technology Data Exchange (ETDEWEB)

Wang, Yuechun [School of Materials Science and Engineering, Yunnan University, Kunming (China); Chen, Xiuhua, E-mail: chenxh@ynu.edu.cn [School of Materials Science and Engineering, Yunnan University, Kunming (China); Ma, Wenhui [National Engineering Laboratory of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming (China); Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei [School of Materials Science and Engineering, Yunnan University, Kunming (China)

2017-02-28

Highlights: • In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB{sub 2} compounds and elementary Ni. • The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. • Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. • NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu{sub 3}Si. • Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection. - Abstract: NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO{sub 2}/Si and NiCrB/Cu/NiCrB/SiO{sub 2}/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu{sub 3}Si.
Electron microscopy characterization of a molybdenum diffusion barrier in metallizations for chip carriers

International Nuclear Information System (INIS)

He Anqiang; Ivey, Douglas G.

2004-01-01

Mo layers have been studied as potential diffusion barriers for Au-Sn solder bonds in micro/optoelectronic device packaging. Solder was electroplated as alternating AuSn and Au 5 Sn multi-layers on wafers covered with Ti as an adhesion layer, followed by Mo as the diffusion barrier and Au as a capping layer. Samples were annealed at 340-420 deg. C for as long as 20 min. Scanning and transmission electron microscopy (SEM and TEM) were utilized to characterize interfacial reactions. Mo was found to be metallurgically stable, relative to the Au-Sn solder and the other metallization components, at temperatures up to at least 420 deg. C. However, the effectiveness of Mo as a barrier can be compromised by two factors. One of these is related to surface roughness associated with AlN or Al 2 O 3 carriers. Non-uniform metallization coverage can lead to breaks in the Mo barrier, resulting in contact between the carrier and molten solder during bonding applications. In addition, thermal stresses generated during heating and cooling can lead to cracking and spalling of the Mo and adhesion layers, exposing the carrier material to molten solder. Pre-annealing can help to relieve the thermal stresses and prevent spalling
Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed
Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

Directory of Open Access Journals (Sweden)

Chang-Yu Lin

2017-07-01

Full Text Available Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.
On the porosity of barrier layers

Directory of Open Access Journals (Sweden)

J. Mignot

2009-09-01

Full Text Available Barrier layers are defined as the layer between the pycnocline and the thermocline when the latter are different as a result of salinity stratification. We present a revisited 2-degree resolution global climatology of monthly mean oceanic Barrier Layer (BL thickness first proposed by de Boyer Montégut et al. (2007. In addition to using an extended data set, we present a modified computation method that addresses the observed porosity of BLs. We name porosity the fact that barrier layers distribution can, in some areas, be very uneven regarding the space and time scales that are considered. This implies an intermittent alteration of air-sea exchanges by the BL. Therefore, it may have important consequences for the climatic impact of BLs. Differences between the two computation methods are small for robust BLs that are formed by large-scale processes. However, the former approach can significantly underestimate the thickness of short and/or localized barrier layers. This is especially the case for barrier layers formed by mesoscale mechanisms (under the intertropical convergence zone for example and along western boundary currents and equatorward of the sea surface salinity subtropical maxima. Complete characterisation of regional BL dynamics therefore requires a description of the robustness of BL distribution to assess the overall impact of BLs on the process of heat exchange between the ocean interior and the atmosphere.

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

Science.gov (United States)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.
Ocean barrier layers' effect on tropical cyclone intensification.

Science.gov (United States)

Balaguru, Karthik; Chang, Ping; Saravanan, R; Leung, L Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

2012-09-04

Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are "quasi-permanent" features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.
Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

Energy Technology Data Exchange (ETDEWEB)

Mardani, Shabnam, E-mail: shabnam.mardani@angstrom.uu.se; Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li, E-mail: shili.zhang@angstrom.uu.se [Solid State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 (Sweden)

2014-08-18

Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.
Application of the photomodulated reflectance technique to the monitoring of metal layers

Energy Technology Data Exchange (ETDEWEB)

Dobos, Gabor; Lenk, Sandor; Ujhelyi, Ferenc; Szita, Zsofia; Kocsanyi, Laszlo [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest (Hungary); Somogyi, Andras [Semilab Corporation, Prielle Kornelia ut 2, 1117 Budapest (Hungary)

2011-09-15

Photomodulated reflectance (PMR) measurement techniques are currently used for the monitoring of ultra-shallow junctions. This paper discusses the possibility of applying them to the characterisation of metal layers. A finite element method based computer model has been created to study the dependence of the PMR signal on different sample parameters. We present the results of these simulations and show that the method can be used to establish the thickness of a metal layer (if the material is known) and it can also provide information about the metal/semiconductor interface. This information might be used to characterise the barrier seed layer beneath the metal, by a non-contact and non-destructive way. Simulation results are also supported by actual measurements on test samples. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

DEFF Research Database (Denmark)

Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

2014-01-01

Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3...
Performance of Zr as FCCI barrier layer for metallic fuel of fast reactor

International Nuclear Information System (INIS)

Kaity, Santu; Bhagat, R.K.; Kutty, T.R.G.; Kumar, Arun; Laik, A.; Kamath, H.S.

2011-01-01

Uranium-plutonium (U-Pu) and uranium-plutonium-zirconium (U-Pu-Zr) alloys have been considered as promising advanced fuels for fast reactor in India because of its high breeding potential, high thermal conductivity, high fissile and fertile atom densities, low doubling time and ease of fabrication compared to other ceramic fuels. The chemical compatibility between the fuel and clad material also known as fuel-clad chemical interaction (FCCI) has been recognized as one of the major concerns about the performance of the metallic fuel. Primarily, two design concepts have been proposed for the metallic fuel development programme for FBRs. One of them is based on sodium bonded ternary U-Pu-Zr alloy with T91 grade steel clad, and the other consists of binary U-Pu alloy mechanically bonded to T91 clad with a Zr liner between the fuel and clad. U will be the axial blanket material for U-Pu binary fuel. In the present investigation, the performance of Zr as FCCI barrier layer was studied through diffusion couple experiments of U/Zr/T91. A thin Zr foil (thickness ∼ 200 μm) sandwiched between U and T91 discs was kept inside a fixture made of Inconel 600 alloy. The fixture was encapsulated in quartz tube under Helium atmosphere and then heated at 650, 700 and 750 deg C for upto 1500 h. The extent of reaction and composition of phases formed were analyzed by scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) and electron probe microanalyser (EPMA) equipped with wavelength dispersive spectrometer (WDS)
Studies of proximity-effect and tunneling in YBCO/metal layered films

Energy Technology Data Exchange (ETDEWEB)

Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H. (Bellcore, Red Bank, NJ (USA)); Giroud, M. (CRTBT-CNRS, Grenoble (France)); Rowell, J.M. (Conductus, Sunnyvale, CA (USA))

1989-12-01

The short coherence length of the high-Tc superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to ''draw out'' Cooper pairs. Our goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. Such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed. (orig.).
Studies of proximity-effect and tunneling in YBCO/metal layered films

International Nuclear Information System (INIS)

Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H.; Giroud, M.; Rowell, J.M.

1989-01-01

The short coherence length of the high-T c superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to draw out Cooper pairs. The authors' goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. They discuss how such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed
Performance evaluation of intermediate cover soil barrier for removal of heavy metals in landfill leachate.

Science.gov (United States)

Suzuki, Kazuyuki; Anegawa, Aya; Endo, Kazuto; Yamada, Masato; Ono, Yusaku; Ono, Yoshiro

2008-11-01

This pilot-scale study evaluated the use of intermediate cover soil barriers for removing heavy metals in leachate generated from test cells for co-disposed fly ash from municipal solid waste incinerators, ash melting plants, and shredder residue. Cover soil barriers were mixtures of Andisol (volcanic ash soil), waste iron powder, (grinder dust waste from iron foundries), and slag fragments. The cover soil barriers were installed in the test cells' bottom layer. Sorption/desorption is an important process in cover soil bottom barrier for removal of heavy metals in landfill leachate. Salt concentrations such as those of Na, K, and Ca in leachate were extremely high (often greater than 30 gL(-1)) because of high salt content in fly ash from ash melting plants. Concentrations of all heavy metals (nickel, manganese, copper, zinc, lead, and cadmium) in test cell leachates with a cover soil barrier were lower than those of the test cell without a cover soil barrier and were mostly below the discharge limit, probably because of dilution caused by the amount of leachate and heavy metal removal by the cover soil barrier. The cover soil barriers' heavy metal removal efficiency was calculated. About 50% of copper, nickel, and manganese were removed. About 20% of the zinc and boron were removed, but lead and cadmium were removed only slightly. Based on results of calculation of the Langelier saturation index and analyses of core samples, the reactivity of the cover soil barrier apparently decreases because of calcium carbonate precipitation on the cover soil barriers' surfaces.
Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

Science.gov (United States)

Qiu, Dongri; Kim, Eun Kyu

2015-09-01

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.
Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

Science.gov (United States)

Qiu, Dongri; Kim, Eun Kyu

2015-09-03

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.
Reducing the Schottky barrier between few-layer MoTe2 and gold

Science.gov (United States)

Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

2017-12-01

Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.
Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

International Nuclear Information System (INIS)

Kaeaeriaeinen, Tommi O.; Maydannik, Philipp; Cameron, David C.; Lahtinen, Kimmo; Johansson, Petri; Kuusipalo, Jurkka

2011-01-01

One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O 2 TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O 2 TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.
Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

Energy Technology Data Exchange (ETDEWEB)

Kaeaeriaeinen, Tommi O., E-mail: tommi.kaariainen@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Cameron, David C., E-mail: david.cameron@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Lahtinen, Kimmo, E-mail: kimmo.lahtinen@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Johansson, Petri, E-mail: petri.johansson@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland)

2011-03-01

One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O{sub 2}TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O{sub 2}TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.
Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

International Nuclear Information System (INIS)

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

2008-01-01

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling
Performance of the diffusion barrier in the metallic fuel in sodium-cooled fast reactor

International Nuclear Information System (INIS)

Kim, Jun Hwan; Ryu, Ho Jin; Yang, Seong Woo; Lee, Byoung Oon; Oh, Seok Jin; Lee, Chan Bock; Hahn, Dohee

2009-01-01

The objectives in this study are to propose several kinds of barrier materials and to evaluate their performance to prevent a fuel-clad interaction situation between the metallic fuel and the clad material in the Sodium-cooled Fast Reactor (SFR). Metallic foil made from refractory element, electrodeposition of the Cr on the clad surface, and the vapor deposition of the Zr were used as the barrier layers. The diffusion couple test was performed at the temperature of 800degC for 25 hour. The results showed that considerable amount of reaction occurred at the specimen without barrier, whereas excellent performance was observed in that neither reaction nor inter-diffusion occurred in the case of metallic foil made of Cr or V. Electrodeposition was revealed to be excellent provided that optimum deposition condition can be found. Similar to the electro-deposition result, excellent performance observed in the case of vapor deposition condition. (author)
Engineering kinetic barriers in copper metallization

International Nuclear Information System (INIS)

Huang Hanchen; Wei, H.L.; Woo, C.H.; Zhang, X.X.

2002-01-01

In metallization processes of integrated circuits, it is desirable to deposit the metal lines (aluminum or copper) fast and at low temperatures. However, the lines (films) usually consist of undesirable columns and voids, because of the absence of sufficient diffusion--a direct result of large kinetic barriers. Following the proposal and realization of the three-dimensional Ehrlich-Schwoebel (3D ES) barrier, we present here a method to engineer this kinetic barrier so as to improve quality of deposited copper films. We deposit copper films by magnetron sputtering, characterize the film structure and texture by using the scanning electron microscope and the x-ray diffraction, respectively. Taking indium as surfactant during copper deposition, we have achieved much better density and bottom coverage of copper filled trenches. The characterizations show that the improvement is the result of the 3D ES barrier reduction caused by indium addition. Engineering the 3D ES barrier therefore leads to improved film quality
Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal

Science.gov (United States)

Malyar, Ivan V.; Gorin, Dmitry A.; Stetsyura, Svetlana V.

2013-01-01

In this report we present the analysis of I-V curves for MIS-structures like silicon substrate / nanodimensional polyelectrolyte layer / metal probe (contact) which is promising for biosensors, microfluidic chips, different devices of molecular electronics, such as OLEDs, solar cells, where polyelectrolyte layers can be used to modify semiconductor surface. The research is directed to investigate the contact phenomena which influence the resulting signal of devices mentioned above. The comparison of I-V characteristics of such structures measured by scanning tunnel microscopy (contactless technique) and using contact areas deposited by thermal evaporation onto the organic layer (the contact one) was carried out. The photoassisted I-V measurements and complex analysis based on Simmons and Schottky models allow one to extract the potential barriers and to observe the changes of charge transport in MIS-structures under illumination and after polyelectrolyte adsorption. The direct correlation between the thickness of the deposited polyelectrolyte layer and both equilibrium tunnel barrier and Schottky barrier height was observed for hybrid structures with polyethylenimine. The possibility of control over the I-V curves of hybrid structure and the height of the potential barriers (for different charge transports) by illumination was confirmed. Based on experimental data and complex analysis the band diagrams were plotted which illustrate the changes of potential barriers for MIS-structures due to the polyelectrolyte adsorption and under the illumination.
Recombination barrier layers in solid-state quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.; Brennan, Thomas P.; Dominguez, Juan C.; Bent, Stacey F.

2012-01-01

in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer
Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface

Science.gov (United States)

Chanana, Anuja; Mahapatra, Santanu

2016-01-01

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2-channel-based field effect transistors. Approaches such as choosing metals with appropriate work functions and chemical doping are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigate the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au, and Pt) reveal that (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt; (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene-metal system with shift in the bands on the energy axis. (iii) A proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene-inserted MoS2-metal contact. These understandings would provide a direction in developing high-performance transistors involving heteroatomic layers as contact electrodes.

Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

Energy Technology Data Exchange (ETDEWEB)

Bilo, Fabjola [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Borgese, Laura, E-mail: laura.borgese@unibs.itl [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina [Atominstitut, TU Wien, Stadionallee 2, 1020 Vienna (Austria); Pazzaglia, Ugo [Dipartimento Specialità Medico Chirurgiche Sc. Radiol. e Sanità Pubblica, University of Brescia, v.le Europa, 11, 25121 Brescia (Italy); Depero, Laura E. [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy)

2015-12-30

Highlights: • Co and Cr migrate from bare alloy implant to the surrounding tissue showing a cluster distribution. • Co and Cr migrate from the TiO{sub 2} coated implant to the surrounding tissue showing a decreasing gradient distribution from the alloy surface. • TiO{sub 2} coating layers obtained by ALD on Co–Cr alloy show a barrier effect for the migration of metals. • The thicker the TiO{sub 2} layer deposited by ALD, the lower the metal migration. • The migration of metals from bare alloy toward the surrounding tissue increases with time. This effect is not detected in the coated samples. - Abstract: We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co–Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO{sub 2}. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO{sub 2} layer, the lower is the metal migration.
Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

Science.gov (United States)

Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

2018-04-01

The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.
Investigation of anodizing parameter effect on barrier layer of anodic zirconium oxide

International Nuclear Information System (INIS)

Kharchenko, Eh.P.

1979-01-01

Effect of fluoride concentration and forming direction upon kinetics of barrier layer transformations in the process of preparation of phase anodic zirconium oxide in acid fluorine-containing solutions is considered. Suppositions are made on the mechanism of barrier layer transformation under the effect of the parameters mentioned. The thickness of the barrier layer is determined by two methods and it is shown that coefficient of the layer thickess growth at the voltage increase by 1 V is much lower than during formation of the barrier films in non-agressive electrolytes
Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

Science.gov (United States)

Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

2014-06-25

This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV.
Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

Directory of Open Access Journals (Sweden)

Smyntyna V. A.

2011-11-01

Full Text Available Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.
A method of producing a multilayer barrier structure for a solid oxide fuel cell

DEFF Research Database (Denmark)

2010-01-01

The present invention provides a method of producing a multilayer barrier structure for a solid oxide cell stack, comprising the steps of: - providing a metal interconnect, wherein the metal interconnect is a ferritic stainless steel layer; - applying a first metal oxide layer on said metal...... oxide; and - reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, and a solid oxide stack comprising an anode contact layer and support structure, an anode layer, an electrolyte layer, a cathode layer, a cathode contact...... layer, a metallic interconnect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmosphere composition and current load, which depends on the layer composition facilitating the formation...
Recombination barrier layers in solid-state quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.

2012-06-01

By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.
Process and electrolyte for applying barrier layer anodic coatings

International Nuclear Information System (INIS)

Dosch, R.G.; Prevender, T.S.

1975-01-01

Various metals may be anodized, and preferably barrier anodized, by anodizing the metal in an electrolyte comprising quaternary ammonium compound having a complex metal anion in a solvent containing water and a polar, water soluble organic material. (U.S.)
Implementation of a Non-Metallic Barrier in an Electric Motor

Science.gov (United States)

M?Sadoques, George; Carra, Michael; Beringer, Woody

2012-01-01

Electric motors that run in pure oxygen must be sealed, or "canned," for safety reasons to prevent the oxygen from entering into the electrical portion of the motor. The current canning process involves designing a metallic barrier around the rotor to provide the separation. This metallic barrier reduces the motor efficiency as speed is increased. In higher-speed electric motors, efficiency is greatly improved if a very thin, nonmetallic barrier can be utilized. The barrier thickness needs to be approximately 0.025-in. (.0.6-mm) thick and can be made of a brittle material such as glass. The motors, however, designed for space applications are typically subject to high-vibration environments. A fragile, non-metallic barrier can be utilized in a motor assembly if held in place by a set of standard rubber O-ring seals. The O-rings provide the necessary sealing to keep oxygen away from the electrical portion of the motor and also isolate the fragile barrier from the harsh motor vibration environment. The compliance of the rubber O-rings gently constrains the fragile barrier and isolates it from the harsh external motor environment. The use of a non-metallic barrier greatly improves motor performance, especially at higher speeds, while isolating the electronics from the working fluid with an inert liner.
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions
Few-layer MoS2 as nitrogen protective barrier

Science.gov (United States)

Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

2017-10-01

We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.
Canonical Schottky barrier heights of transition metal dichalcogenide monolayers in contact with a metal

Science.gov (United States)

Szcześniak, Dominik; Hoehn, Ross D.; Kais, Sabre

2018-05-01

The transition metal dichalcogenide (M X2 , where M =Mo , W and X =S , Se, Te) monolayers are of high interest for semiconducting applications at the nanoscale level; this interest is due to both their direct band gaps and high charge mobilities. In this regard, an in-depth understating of the related Schottky barrier heights, associated with the incorporation of M X2 sheets into novel low-dimensional metal-semiconductor junctions, is of crucial importance. Herein, we generate and provide analysis of the Schottky barrier heights behavior to account for the metal-induced gap states concept as its explanation. In particular, the present investigations concentrate on the estimation of the charge neutrality levels directly by employing the primary theoretical model, i.e., the cell-averaged Green's function formalism combined with the complex band structure technique. The results presented herein place charge neutrality levels in the vicinity of the midgap; this is in agreement with previous reports and analogous to the behavior of three-dimensional semiconductors. The calculated canonical Schottky barrier heights are also found to be in agreement with other computational and experimental values in cases where the difference between electronegativities of the semiconductor and metal contact is small. Moreover, the influence of the spin-orbit effects is herein considered and supports that Schottky barrier heights have metal-induced gap state-derived character, regardless whether spin-orbit coupling interactions are considered. The results presented within this report constitute a direct and vital verification of the importance of metal-induced gap states in explaining the behavior of observed Schottky barrier heights at M X2 -metal junctions.
High dose, heavy ion implantation into metals: the use of sacrificial surface layers to enhance retention

International Nuclear Information System (INIS)

Clapham, L.

1994-01-01

While of considerable interest for the production of metallic alloys, high dose, heavy ion implantation is highly problematical, since the process is limited by sputtering effects. Sputtering is less significant, however, for light target materials, such as C and Al. This paper summarizes studies involving the use of light materials (such as C and Al) which act as slowly sputtering ''sacrificial layers'' when deposited on metallic targets prior to heavy ion implantation. The use of C and Al sacrificial coatings has enabled implanted ion retentions of 100% to be obtained in a number of ion-metal target systems, where the retentions in uncoated samples were as low as 20%. Ion implantation invariably leads to mixing at the sacrificial layer-metal target interface. This mixing may be detrimental in certain systems, so it is useful to be able to minimize or remove this mixed region. To achieve this, a number of techniques have been investigated: (1) removal of the mixed region in the latter stages of the implant; (2) using a barrier layer or chemical effects to minimize mixing at the sacrificial layer-metal interface; (3) choosing a sacrificial layer material which forms a mixed region which has desirable properties. The results of these investigations, for a number of different ion-target systems, are outlined in this paper. (orig.)
The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

Science.gov (United States)

Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

2016-06-22

Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.
Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

Science.gov (United States)

Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

2009-01-01

A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.
Effect of W addition on the electroless deposited NiP(W) barrier layer

International Nuclear Information System (INIS)

Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

2013-01-01

Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu 3 Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP–2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP–2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.
Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

International Nuclear Information System (INIS)

Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

2006-01-01

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide
Phase characterization of Re-based diffusion barrier layer on Nb substrate

International Nuclear Information System (INIS)

Sugiarti, Eni; Wang, Youngmin; Hashimoto, Naoyuki; Ohnuki, Somei; Narita, Toshio

2011-01-01

An electron microscopy phase characterization was carried out for a Re-based diffusion barrier layer, which was deposited on the Nb substrate used as an ultra high temperature material. The coating process produced three layers; an outer Cr(Re) layer, an intermediate Cr-Nb-Re layer, and an inner Nb(Re) layer. The Cr-Nb-Re layer is considered to act as a diffusion barrier layer between the substrate and the outer Cr(Re) reservoir layer. The Cr(Re) and Nb(Re) layers are in single phase with a similar bcc structures, but they are different in structure from the intermediate layer, which is composed of a dual phase of Re 63 Cr 20 Nb 17 with a cubic structure and Nb 42 Re 33 Cr 25 with a hexagonal structure determined by transmission electron microscopy (TEM) in this study. (author)
The effect of barrier layer-mediated catalytic deactivation in vertically aligned carbon nanotube growth

International Nuclear Information System (INIS)

Patole, S P; Yu, Seong-Man; Shin, Dong-Wook; Yoo, Ji-Beom; Kim, Ha-Jin; Han, In-Taek; Kwon, Kee-Won

2010-01-01

The effect of Al-barrier layer-mediated Fe-catalytic deactivation in vertically aligned carbon nanotube (CNT) growth was studied. The substrate surface morphology, catalytic diffusion and barrier layer oxidation were found to be dependent on the annealing temperature of the barrier layer, which ultimately affects CNT growth. The annealed barrier layer without complete oxidation was found to be suitable for top to bottom super aligned CNT arrays. The highest average CNT growth rate of up to 3.88 μm s -1 was observed using this simple approach. Details of the analysis are also presented.
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Science.gov (United States)

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

Directory of Open Access Journals (Sweden)

Kaleem Abbas

2018-03-01

Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.
Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

International Nuclear Information System (INIS)

Kim, Hyun Gi; Kim, Sung Soo

2011-01-01

Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.
Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

International Nuclear Information System (INIS)

Pershyn, Y.P.; Zubarev, E.N.; Kondratenko, V.V.; Sevryukova, V.A.; Kurbatova, S.V.

2011-01-01

Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∝27 nm and barrier layers of CrB 2 0.3- and 0.7-nm thick within the temperature range of 420-780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed. (orig.)
Metal matrix coated fiber composites and the methods of manufacturing such composites

Science.gov (United States)

Weeks, J.K. Jr.; Gensse, C.

1993-09-14

A fiber coating which allows ceramic or metal fibers to be wetted by molten metals is disclosed. The coating inhibits degradation of the physical properties caused by chemical reaction between the fiber and the coating itself or between the fiber and the metal matrix. The fiber coating preferably includes at least a wetting layer, and in some applications, a wetting layer and a barrier layer between the fiber and the wetting layer. The wetting layer promotes fiber wetting by the metal matrix. The barrier layer inhibits fiber degradation. The fiber coating permits the fibers to be infiltrated with the metal matrix resulting in composites having unique properties not obtainable in pure materials. 8 figures.
Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Energy Technology Data Exchange (ETDEWEB)

Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.; Kryzhanovskaya, N. V.; Maximov, M. V. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation); Semenova, E. S.; Yvind, K. [Technical University of Denmark, DTU Fotonik (Denmark); Asryan, L. V. [Virginia Polytechnic Institute and State University (United States); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

2017-02-15

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
Specific features of waveguide recombination in laser structures with asymmetric barrier layers

DEFF Research Database (Denmark)

Polubavkina, Yu; Zubov, F. I.; Moiseev, E.

2017-01-01

microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding......The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical...... layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport....
Optimization of multi-layered metallic shield

International Nuclear Information System (INIS)

Ben-Dor, G.; Dubinsky, A.; Elperin, T.

2011-01-01

Research highlights: → We investigated the problem of optimization of a multi-layered metallic shield. → The maximum ballistic limit velocity is a criterion of optimization. → The sequence of materials and the thicknesses of layers in the shield are varied. → The general problem is reduced to the problem of Geometric Programming. → Analytical solutions are obtained for two- and three-layered shields. - Abstract: We investigate the problem of optimization of multi-layered metallic shield whereby the goal is to determine the sequence of materials and the thicknesses of the layers that provide the maximum ballistic limit velocity of the shield. Optimization is performed under the following constraints: fixed areal density of the shield, the upper bound on the total thickness of the shield and the bounds on the thicknesses of the plates manufactured from every material. The problem is reduced to the problem of Geometric Programming which can be solved numerically using known methods. For the most interesting in practice cases of two-layered and three-layered shields the solution is obtained in the explicit analytical form.
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

2005-01-01

TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5
Manipulating the dipole layer of polar organic molecules on metal surfaces via different charge-transfer channels

Science.gov (United States)

Lin, Meng-Kai; Nakayama, Yasuo; Zhuang, Ying-Jie; Wang, Chin-Yung; Pi, Tun-Wen; Ishii, Hisao; Tang, S.-J.

The key properties of organic films such as energy level alignment (ELA), work functions, and injection barriers are closely linked to this dipole layer. Using angle resolved photoemission spectroscopy (ARPES), we systemically investigate the coverage-dependent work functions and spectra line shapes of occupied molecular orbital states of a polar molecule, chloroaluminium phthalocyanine (ClAlPc), grown on Ag(111) to show that the orientations of the first ClAlPc layer can be manipulated via the molecule deposition rate and post annealing, causing ELA at organic-metal interface to differ for about 0.3 eV between Cl-up and Cl-down configuration. Moreover, by comparing the experimental results with the calculations based on both gas-phase model and realistic model of ClAlPc on Ag(111) , we evidence that the different orientations of ClAlPc dipole layers lead to different charge-transfer channels between ClAlPc and Ag, a key factor that controls the ELA at organic-metal interface.
A study on water infiltration barriers with compacted layered soils

International Nuclear Information System (INIS)

Umeda, Y.; Komori, K.; Fujiwara, A.

1993-01-01

In shallow-ground disposal of low-level radioactive wastes, water movements due to natural processes in the soil covering the disposal facility must be properly controlled. A capillary barrier with compacted layered soils can provide an effective means of controlling water movement in the soil covering placed on a low-level radioactive waste disposal facility. An experiment was performed to determine the effectiveness of a full-scale fill as a capillary barrier. The fill used in the experiment was constructed of compacted layers of clay, fine sand, and gravel. Man-made rain was caused to fall on the surfaces of the fill to observe the infiltration of rainwater into the fill and to measure the amount of water drained from within. The experiment established the effectiveness of the capillary barrier
Effect of layered manufacturing techniques, alloy powders, and layer thickness on metal-ceramic bond strength.

Science.gov (United States)

Ekren, Orhun; Ozkomur, Ahmet; Ucar, Yurdanur

2018-03-01

Direct metal laser sintering (DMLS) and direct metal laser melting (DMLM) have become popular for fabricating the metal frameworks of metal-ceramic restorations. How the type of layered manufacturing device, layer thickness, and alloy powder may affect the bond strength of ceramic to metal substructure is unclear. The purpose of this in vitro study was to evaluate the bond strength of dental porcelain to metal frameworks fabricated using different layered manufacturing techniques (DMLS and DMLM), Co-Cr alloy powders, and layer thicknesses and to evaluate whether a correlation exists between the bond strength and the number of ceramic remnants on the metal surface. A total of 75 bar-shaped metal specimens (n=15) were fabricated using either DMLS or DMLM. The powder alloys used were Keramit NP-S and EOS-Cobalt-Chrome SP-2 with layer thicknesses of 20 μm and 30 μm. After ceramic application, the metal-ceramic bond strength was evaluated with a 3-point-bend test. Three-way ANOVA followed by the Tukey honest significance difference test were used for statistical analysis (α=.05). De-bonding surface microstructure was observed with scanning electron microscopy. Energy dispersive spectroscopy analysis was conducted to evaluate the correlation between ceramic remnants on the metal surface and bond strength values. The mean bond strength value of DMLS was significantly higher than that of DMLM. While no statistically significant difference was found between layer thicknesses, alloy powders closely affected bond strength. Statistical comparisons revealed that the highest bond strength could be achieved with DMLS-Cobalt-Chrome SP2-20μm, and the lowest bond strength was observed in DMLS-Keramit NP-S-20μm (P≤.05). No correlation was found between porcelain remnants on the metal surface and bond strength values. The layered manufacturing device and the alloy powders evaluated in the current study closely affected the bond strength of dental porcelain to a metal framework
Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.

2015-02-13

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.
Laser modification of macroscopic properties of metal surface layer

Science.gov (United States)

Kostrubiec, Franciszek

1995-03-01

Surface laser treatment of metals comprises a number of diversified technological operations out of which the following can be considered the most common: oxidation and rendering surfaces amorphous, surface hardening of steel, modification of selected physical properties of metal surface layers. In the paper basic results of laser treatment of a group of metals used as base materials for electric contacts have been presented. The aim of the study was to test the usability of laser treatment from the viewpoint of requirements imposed on materials for electric contacts. The results presented in the paper refer to two different surface treatment technologies: (1) modification of infusible metal surface layer: tungsten and molybdenum through laser fusing of their surface layer and its crystallization, and (2) modification of surface layer properties of other metals through laser doping of their surface layer with foreign elements. In the paper a number of results of experimental investigations obtained by the team under the author's supervision are presented.
Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

International Nuclear Information System (INIS)

Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

2015-01-01

The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface
Developing Cost-Effective Dense Continuous SDC Barrier Layers for SOFCs

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Hoang Viet P.; Hardy, John S.; Coyle, Christopher A.; LU, Zigui; Stevenson, Jeffry W.

2017-12-04

Significantly improved performance during electrochemical testing of a cell with a dense continuous pulsed laser deposited (PLD) samarium doped ceria (SDC) layer spurred investigations into the fabrication of dense continuous SDC barrier layers by means of cost-effective deposition using screen printing which is amenable to industrial production of SOFCs. Many approaches to improve the SDC density have been explored including the use of powder with reduced particle sizes, inks with increased solids loading, and doping with sintering aids (1). In terms of sintering aids, dopants like Mo or binary systems of Mo+Cu or Fe+Co greatly enhance SDC sinterability. In fact, adding dopants to a screen printed, prefired, porous SDC layer made it possible to achieve a dense continuous barrier layer atop the YSZ electrolyte without sintering above 1200°C. Although the objective of fabricating a dense continuous layer was achieved, additional studies have been initiated to improve the cell performance. Underlying issues with constrained sintering and dopant-enhanced ceria-zirconia solid solubility are also addressed in this paper.
Metal-semiconductor Schottky barrier junctions and their applications

CERN Document Server

1984-01-01

The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the la...
Polysulfide intercalated layered double hydroxides for metal capture applications

Energy Technology Data Exchange (ETDEWEB)

Kanatzidis, Mercouri G.; Ma, Shulan

2017-04-04

Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.
Determination of accurate metal silicide layer thickness by RBS

International Nuclear Information System (INIS)

Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

1995-01-01

Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)
Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

DEFF Research Database (Denmark)

Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

2009-01-01

The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...
Glomerular endothelial surface layer acts as a barrier against albumin filtration

NARCIS (Netherlands)

Dane, M.J.; Berg, B.M. van den; Avramut, M.C.; Faas, F.G.; Vlag, J. van der; Rops, A.L.; Ravelli, R.B.; Koster, B.J.; Zonneveld, A.J. van; Vink, H.; Rabelink, T.J.

2013-01-01

Glomerular endothelium is highly fenestrated, and its contribution to glomerular barrier function is the subject of debate. In recent years, a polysaccharide-rich endothelial surface layer (ESL) has been postulated to act as a filtration barrier for large molecules, such as albumin. To test this

The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization

Energy Technology Data Exchange (ETDEWEB)

Yu, Zhinong, E-mail: znyu@bit.edu.cn [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Ren, Ruihuang [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Xue, Jianshe; Yao, Qi; Li, Zhengliang; Hui, Guanbao [Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176 (China); Xue, Wei [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China)

2015-02-15

Highlights: • The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film. • The introduction of oxygen into the deposition of CuCa film is necessary to improve the adhesion of Cu film. • The CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate. - Abstract: The properties of copper (Cu) metallization based on copper–calcium (CuCa) diffusion barrier as a function of oxygen flux in the CuCa film deposition were investigated in view of adhesion, diffusion and electronic properties. The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film, however, and increases the resistance of Cu film. The introduction of oxygen into the deposition of CuCa film induces the improvement of adhesion and crystallinity of Cu film, but produces a slight increase of resistance. The increased resistance results from the partial oxidation of Cu film. The annealing process in vacuum further improves the adhesion, crystallinity and conductivity of Cu film. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) show that the CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate due to the formation of Ca oxide in the interface of CuCa/substrate.
Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

International Nuclear Information System (INIS)

Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

2012-01-01

Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.
Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

International Nuclear Information System (INIS)

Asalkhanov, Yu.I.; Saneev, Eh.L.

2002-01-01

Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru
Progress in MOSFET double-layer metalization

Science.gov (United States)

Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

1980-01-01

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).
Simulation of thermo-Elastics Properties of Thermal Barrier Coatings ...

African Journals Online (AJOL)

Thermal barrier coatings are used to protect different parts in compressors and turbines from heat. They are generally composed of two layers, one metallic layer providing resistance to heat corrosion and oxidation, and one thermally insulating ceramic layer. Two different techniques are industrially used. Plasma spray ...
The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

KAUST Repository

Brennan, Thomas P.

2012-01-01

Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO 2 active layer and the HTM spiro-OMeTAD. The impact of Al 2O 3 barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl 4 surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al 2O 3 deposition. However, only when the TiCl 4 treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al 2O 3 ALD and the TiCl 4 surface treatment whereas the insulating properties of Al 2O 3 hinder charge injection and lead to current loss in TiCl 4-treated devices. The impact of Al 2O 3 barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al 2O 3 growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems. © This journal is the Owner Societies 2012.
Application of diffusion barriers to high modulus fibers

Science.gov (United States)

Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

1977-01-01

Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.
Shottky-barrier formation

International Nuclear Information System (INIS)

Guines, F.; Sanchez-Dehesa, J.; Flores, F.

1983-01-01

In this paper a realistic selfconsistent calculation of an abrupt metal-semiconductor junction is presented by means of a tight-binding approach. A specific Si-Ag junction has been considered, and the charge neutrality level as well as the barrier height have been determined in good agreement with experiments. For a generaljunction it is shown that the interface properties depend essentially on the characteristics of the first metal layer and its interaction with the semiconductor. (Author) [pt
Metallization systems for stable ohmic contacts to GaAs

International Nuclear Information System (INIS)

Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

1986-01-01

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed
Evaluation of the barrier capability of Zr-Si films with different substrate temperature for Cu metallization

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Ding Minghui; Shao Lei

2009-01-01

Barrier capability of Zr-Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr-Si diffusion barriers were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. An increase in substrate temperature results in a slightly decreased deposition rate together with an increase in mass density. An increase in substrate temperature also results in grain growth as deduced from field emission scanning electron microscopy (FE-SEM) micrographs. X-ray diffraction (XRD) spectra and Auger electron spectroscopy (AES) depth profiles for Cu/Zr-Si(RT)/Si and Cu/Zr-Si(300 deg. C)/Si samples subjected to anneal at various temperatures show that the thermal stability was strongly correlated with the deposition temperature (consequently different density and chemical composition etc.) of the Zr-Si barrier layers. ZrSi(300 deg. C) with higher mass density make the Cu/Zr-Si(300 deg. C)/Si sample more stable. The appearance of Cu 3 Si in the Cu/Zr-Si/Si sample is attributed to the failure mechanism which may be associated with the diffusion of Cu and Si via the grain boundaries of the Zr-Si barriers.
First-Principles Investigations of the Working Mechanism of 2D h-BN as an Interfacial Layer for the Anode of Lithium Metal Batteries.

Science.gov (United States)

Shi, Le; Xu, Ao; Zhao, Tianshou

2017-01-18

An issue with the use of metallic lithium as an anode material for lithium-based batteries is dendrite growth, causing a periodic breaking and repair of the solid electrolyte interphase (SEI) layer. Adding 2D atomic crystals, such as h-BN, as an interfacial layer between the lithium metal anode and liquid electrolyte has been demonstrated to be effective to mitigate dendrite growth, thereby enhancing the Columbic efficiency of lithium metal batteries. But the underlying mechanism leading to the reduced dendrite growth remains unknown. In this work, with the aid of first-principle calculations, we find that the interaction between the h-BN and lithium metal layers is a weak van der Waals force, and two atomic layers of h-BN are thick enough to block the electron tunneling from lithium metal to electrolyte, thus prohibiting the decomposition of electrolyte. The interlayer spacing between the h-BN and lithium metal layers can provide larger adsorption energies toward lithium atoms than that provided by bare lithium or h-BN, making lithium atoms prefer to intercalate under the cover of h-BN during the plating process. The combined high stiffness of h-BN and the low diffusion energy barriers of lithium at the Li/h-BN interfaces induce a uniform distribution of lithium under h-BN, therefore effectively suppressing dendrite growth.
Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al{sub 2}O{sub 3} interlayers

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A. [Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012 (India); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2015-08-31

The effect of inserting ultra-thin atomic layer deposited Al{sub 2}O{sub 3} dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al{sub 2}O{sub 3}/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al{sub 2}O{sub 3} interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al{sub 2}O{sub 3} interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al{sub 2}O{sub 3}/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface.
A high performance ceria based interdiffusion barrier layer prepared by spin-coating

DEFF Research Database (Denmark)

Plonczak, Pawel; Joost, Mario; Hjelm, Johan

2011-01-01

A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...
Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

International Nuclear Information System (INIS)

Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

2010-01-01

A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)
Electrical and structural properties of a stacked metal layer contact to n-InP

International Nuclear Information System (INIS)

Huang, Wen-Chang; Horng, Chia-Tsung

2011-01-01

In this study, we found that the double metal contact structure in Pt/Al/n-InP diodes provides better rectification characteristics than conventional single-metal/n-InP Schottky diodes. The effective barrier height was measured to be 0.67 eV for a 400 deg. C-annealed Pt/Al/n-InP diode sample. The increase in the barrier height is attributed to the formation of Al 2 O 3 at the metal/n-InP contact interface during thermal annealing. The formation of the phase Al 2 O 3 phase was monitored by X-ray diffraction (XRD) analysis. The corresponding element profiles of Al and O were also confirmed at the metal/n-InP contact interface using secondary ion mass spectrum (SIMS) analysis. The lowering of the Schottky barrier height due to the inhomogeneity at the metal/n-InP junction is also discussed on the basis of the TE theory. The distribution of local effective Schottky barrier heights was explained by a model incorporating the existence of double Gaussian barrier heights, which represent the high barrier and low barrier of the full distribution in the temperature ranges of 83-198 and 198-300 K.
ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.
Metal-phthalocyanine ordered layers on Au(110): Metal-dependent adsorption energy

Energy Technology Data Exchange (ETDEWEB)

Massimi, Lorenzo, E-mail: lorenzo.massimi@uniroma1.it; Angelucci, Marco; Gargiani, Pierluigi; Betti, Maria Grazia [Dipartimento di Fisica, Università di Roma La “Sapienza,” 00185 Roma (Italy); Montoro, Silvia [IFIS Litoral, CONICET-UNL, Laboratorio de Fisica de Superficies e Interfaces, Güemes 3450, Santa Fe (Argentina); Mariani, Carlo, E-mail: carlo.mariani@uniroma1.it [Dipartimento di Fisica, CNISM, Università di Roma La “Sapienza,” 00185 Roma (Italy)

2014-06-28

Iron-phthalocyanine and cobalt-phthalocyanine chains, assembled along the Au(110)-(1×2) reconstructed channels, present a strong interaction with the Au metallic states, via the central metal ion. X-ray photoemission spectroscopy from the metal-2p core-levels and valence band high-resolution ultraviolet photoelectron spectroscopy bring to light signatures of the interaction of the metal-phthalocyanine single-layer with gold. The charge transfer from Au to the molecule causes the emerging of a metal-2p core level component at lower binding energy with respect to that measured in the molecular thin films, while the core-levels associated to the organic macrocycle (C and N 1s) are less influenced by the adsorption, and the macrocycles stabilize the interaction, inducing a strong interface dipole. Temperature Programmed Desorption experiments and photoemission as a function of temperature allow to estimate the adsorption energy for the thin-films, mainly due to the molecule-molecule van der Waals interaction, while the FePc and CoPc single-layers remain adsorbed on the Au surface up to at least 820 K.
Combining Nitrilotriacetic Acid and Permeable Barriers for Enhanced Phytoextraction of Heavy Metals from Municipal Solid Waste Compost by and Reduced Metal Leaching.

Science.gov (United States)

Zhao, Shulan; Jia, Lina; Duo, Lian

2016-05-01

Phytoextraction has the potential to remove heavy metals from contaminated soil, and chelants can be used to improve the capabilities of phytoextraction. However, environmentally persistent chelants can cause metal leaching and groundwater pollution. A column experiment was conducted to evaluate the viability of biodegradable nitrilotriacetic acid (NTA) to increase the uptake of heavy metals (Cd, Cr, Ni, Pb, Cu, and Zn) by L. in municipal solid waste (MSW) compost and to evaluate the effect of two permeable barrier materials, bone meal and crab shell, on metal leaching. The application of NTA significantly increased the concentrations and uptake of heavy metals in . The enhancement was more pronounced at higher dosages of NTA. In the 15 mmol kg NTA treatment using a crab shell barrier, the Cr and Ni concentrations in the plant shoots increased by approximately 8- and 10-fold, respectively, relative to the control. However, the addition of NTA also caused significant heavy metal leaching from the MSW compost. Bone meal and crab shell barriers positioned between the compost and the subsoil were effective in preventing metal leaching down through the soil profile by the retention of metals in the barrier. The application of a biodegradable chelant and the use of permeable barriers is a viable form of enhanced phytoextraction to increase the removal of metals and to reduce possible leaching. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.
Ionic Transport Through Metal-Rich Organic Coatings

Science.gov (United States)

2016-08-19

organic paints, inert metallic layers, and protective oxide layers. 2 Although coatings have been commercially used for many years, the design of new...pigments found in chromates protect the substrate by passivating the metallic surface with an oxide layer. Sacrificial coatings prevent the self...surface, eliminating the components needed for a cathodic reaction to occur. Additionally, organic barrier coatings are protective by preventing
Selection of barrier metals for a waste package in tuff

International Nuclear Information System (INIS)

Russell, E.W.; McCright, R.D.; O'Neal, W.C.

1983-09-01

The Nevada Nuclear Waste Storage Investigation (NNWSI) project under the Civilian Radioactive Waste Management Program is planning a repository at Yucca Mountain at the Nevada Test Site for isolation of high-level nuclear waste. LLNL is developing designs for an engineered barrier system containing several barriers such as the waste form, a canister and/or an overpack, packing, and near field host rock. The selection of metal containment barriers is addressed. 13 references

Plan for metal barrier selection and testing for NNWSI

International Nuclear Information System (INIS)

Halsey, W.G.; McCright, R.D.

1987-12-01

The Department of Energy's Nevada Nuclear Waste Storage Investigations (NNWSI) Project is evaluating a site at Yucca Mountain in Nevada as a geological repository for the storage of high-level nuclear waste. The Nuclear Waste Management Projects (NWMP) at Lawrence Livermore National Laboratory (LLNL) has the responsibility for design, testing, and performance analysis of the NNWSI waste packages. One portion of this work is the selection and testing of the material for container construction. The anticipated container design is for this material to be a corrosion resistant metal called the metal barrier. This document is the publication version of the Scientific Investigation Plan (SIP) for the Metal Barrier Selection and Testing Task. The SIP serves as a formal planning document for the investigation and is used to assign quality assurance levels to the activities of the task. This document is an informal version for information distribution and has the sections on ''Schedule and Milestones'' and the ''Quality Assurance Level Assignment Sheets'' removed
Rare earth zirconium oxide buffer layers on metal substrates

Science.gov (United States)

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2001-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.
Selection of barrier metals for a waste package in tuff

International Nuclear Information System (INIS)

Russell, E.W.; McCright, R.D.; O'Neal, W.C.

1983-10-01

The Nevada Nuclear Waste Storage Investigations (NNWSI) project under the Civilian Radioactive Waste Management Program is planning a repository at Yucca Mountain at the Nevada Test Site for isolation of high-level nuclear waste. Lawrence Livermore National Laboratory is developing designs for an engineered barrier system containing several barriers such as the waste form, a canister and/or an overpack, packing, and near field host rock. In this paper we address the selection of metal containment barriers. 13 references, 4 tables
Modeling and Characteristic Analysis of Wireless Ultrasonic Vibration Energy Transmission Channels through Planar and Curved Metal Barriers

Directory of Open Access Journals (Sweden)

DingXin Yang

2018-01-01

Full Text Available Wireless ultrasonic vibration energy transmission systems through metal barriers based on piezoelectric transducers have drawn a lot of focus due to the advantage of nonpenetration of the barriers, thus maintaining the integrity of sealed structures. It is meaningful to investigate appropriate modeling methods and to characterize such wireless ultrasonic energy transmission channels with different geometric shapes. In this paper, equivalent circuit modeling and finite element modeling methods are applied to the planar metal barrier channel, and a 3-dimensional finite element modeling method is applied to the cylindrical metallic barrier channel. Meanwhile, the experimental setup is established and measurements are carried out to validate the effectiveness of the corresponding modeling methods. The results show that Leach’s equivalent circuit modeling method and finite element modeling method are nearly similarly effective in characterizing the planar metal barrier channel. But for a cylindrical metal barrier, only the three-dimensional finite element modeling method is effective. Furthermore, we found that, for the planar barrier, the effect of standing waves on the efficiency of wireless energy transmission is dominated. But for the curved barrier, only the resonant phenomenon of the piezoelectric transducer exists.
Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.
Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.
Surface flattening processes of metal layer and their effect on transport properties of magnetic tunnel junctions with Al-N barrier

International Nuclear Information System (INIS)

Yoshimura, S.; Nozawa, T.; Shoyama, T.; Tsunoda, M.; Takahashi, M.

2005-01-01

In order to form ultrathin insulating layer in magnetic tunnel junctions (MTJs), two surface flatting processes of metal films are investigated. Oxygen-additive sputter-deposition process was applied to the bottom Cu electrode and the Al layer to be nitrided. Dry-etching process was applied for the surface treatment of lower Co-Fe layer. As a result, the surface roughness of stacked ultrathin Al layer to be nitrided is reduced from 3.2A to 1.7A, and the tunnel magnetoresistance (TMR) ratio of the MTJs increases from 1% to 26% while maintaining resistance-area product (RxA) less than 5x10 2 Ω μm 2 in the Co-Fe/Al(6A)-N/Co-Fe MTJs. We conclude that the decrease of the surface roughness of Al layer is one of the key factors to realize high performance MTJs with low RxA and high TMR ratio
Alkali metal and alkali metal hydroxide intercalates of the layered transition metal disulfides

International Nuclear Information System (INIS)

Kanzaki, Y.; Konuma, M.; Matsumoto, O.

1981-01-01

The intercalation reaction of some layered transition metal disulfides with alkali metals, alkali metal hydroxides, and tetraalkylammonium hydroxides were investigated. The alkali metal intercalates were prepared in the respective metal-hexamethylphosphoric triamide solutions in vaccuo, and the hydroxide intercalates in aqueous hydroxide solutions. According to the intercalation reaction, the c-lattice parameter was increased, and the increase indicated the expansion of the interlayer distance. In the case of alkali metal intercalates, the expansion of the interlayer distance increased continuously, corresponding to the atomic radius of the alkali metal. On the other hand, the hydroxide intercalates showed discrete expansion corresponding to the effective ionic radius of the intercalated cation. All intercalates of TaS 2 amd NbS 2 were superconductors. The expansion of the interlayer distance tended to increase the superconducting transition temperature in the intercalates of TaS 2 and vice versa in those of NbS 2 . (orig.)
Development of Barrier Layers for the Protection of Candidate Alloys in the VHTR

Energy Technology Data Exchange (ETDEWEB)

Levi, Carlos G. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Jones, J. Wayne [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Pollock, Tresa M. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Was, Gary S. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States)

2015-01-22

The objective of this project was to develop concepts for barrier layers that enable leading candi- date Ni alloys to meet the longer term operating temperature and durability requirements of the VHTR. The concepts were based on alpha alumina as a primary surface barrier, underlay by one or more chemically distinct alloy layers that would promote and sustain the formation of the pro- tective scale. The surface layers must possess stable microstructures that provide resistance to oxidation, de-carburization and/or carburization, as well as durability against relevant forms of thermo-mechanical cycling. The system must also have a self-healing ability to allow endurance for long exposure times at temperatures up to 1000°C.
Composition, structure and electrical properties of alumina barrier layers grown in fluoride-containing oxalic acid solutions

Energy Technology Data Exchange (ETDEWEB)

Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)], E-mail: jagmin@ktl.mii.lt; Vrublevsky, I. [Department of Microelectricals, Belarusian State University of Informatics and Radioelectricals, 6 Brovka Street, Minsk 220013 (Belarus); Kuzmarskyte, J.; Jasulaitiene, V. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)

2008-04-15

The composition, structure and electrical properties of alumina barrier layers grown by anodic oxidation in F{sup -}-containing (FC) and F{sup -}-free (FF) oxalic acid solutions were studied using the re-anodizing/dissolution technique, Fourier-transformed infrared and X-ray photoelectron spectroscopy. These results confirmed formation in FC anodizing solutions of films structurally different from ones grown in FF oxalic acid baths. It was found that the barrier layer of FC alumina films is composed of two layers differing in the dissolution rate. These differences are related to the formation in the FC electrolyte of a barrier layer composed of a more microporous outer part and a thin, non-porous and non-scalloped inner part consisting of aluminum oxide and aluminum fluoride.
Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

International Nuclear Information System (INIS)

Barranco, V.; Carpentier, J.; Grundmeier, G.

2004-01-01

The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma
Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

Science.gov (United States)

Majumdar, Shubhankar; Das, S.; Biswas, D.

2015-08-01

Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.
Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

International Nuclear Information System (INIS)

Lü Yuan-Jie; Lin Zhao-Jun; Zhang Yu; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Chen Hong; Wang Zhan-Guo

2011-01-01

Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N 2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

Science.gov (United States)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.
Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

KAUST Repository

Brennan, Thomas P.; Trejo, Orlando; Roelofs, Katherine E.; Xu, John; Prinz, Fritz B.; Bent, Stacey F.

2013-01-01

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.
Comparison of some coating techniques to fabricate barrier layers on packaging materials

Energy Technology Data Exchange (ETDEWEB)

Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Harlin, Ali, E-mail: ali.harlin@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University School of Science and Technology, Kemistintie 1, P.O. Box 16100, FI-00076 AALTO (Finland)

2010-07-30

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.
Comparison of some coating techniques to fabricate barrier layers on packaging materials

International Nuclear Information System (INIS)

Hirvikorpi, Terhi; Vaehae-Nissi, Mika; Harlin, Ali; Karppinen, Maarit

2010-01-01

Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.
Tritium permeation barriers for fusion technology

International Nuclear Information System (INIS)

Perujo, A.; Forcey, K.

1994-01-01

An important issue concerning the safety, feasibility and fueling (i.e., tritium breeding ratio and recovery from the breeding blanket) of a fusion reactor is the possible tritium leakages through the structural materials and in particular through those operating at high temperatures. The control of tritium permeation could be a critical factor in determining the viability of a future fusion power reactor. The formation of tritium permeation barriers to prevent the loss of tritium to the coolant by diffusion though the structural material seems to be the most practical method to minimize such losses. Many authors have discussed the formation of permeation barriers to reduce the leakage of hydrogen isotopes through proposed first wall and structural materials. In general, there are two routes for the formation of such a barrier, namely: the growth of oxide layers (e.g., Cr 2 O 3 , Al 2 O 3 , etc.) or the application of surface coatings. Non-metals are the most promising materials from the point of view of the formation of permeation barriers. Oxides such as Al 2 O 3 or Cr 2 O 3 or carbides such as SiC or TiC have been proposed. Amongst the metals only tungsten or gold are sufficiently less permeable than steel to warrant investigation as candidate materials for permeation barriers. It is of course possible to grow oxide layers on steel directly by heating in the atmosphere or under a variety of conditions (first route above). The direct oxidizing is normally done in an environment of open-quotes wet hydrogenclose quotes to promote the growth of chromia on, for example, nickel steels or ternary oxides on 316L to prevent corrosion. The application of surface layers (second route above), offers a greater range of materials for the formation of permeation barriers. In addition to reducing permeation, such layers should be adhesive, resistant to attack by corrosive breeder materials and should not crack during thermal cycling
Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.
Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

2008-01-01

Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

KAUST Repository

Roelofs, Katherine E.

2013-03-21

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.
Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

Science.gov (United States)

Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

2017-10-01

Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.
Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

DEFF Research Database (Denmark)

Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.

2012-01-01

We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference...
Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

Science.gov (United States)

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.
Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.
Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P

which consist of YBCO superconducting coatings on cube-textured Ni based alloy tapes. Before the epitaxial deposition this superconducting layer, a buffer layer is applied on the metal substrate as a diffusion barrier which is also required to transfer the strong texture of the underlying substrate......, allowing the epitaxial growth of the superconducting layer. State-of-the-art coated conductor hetero structures are mainly based on CeO2 based buffer stacks that consist of a sequence of several different buffer layers. Buffer layers deposited by continuous chemical deposition techniques, which...... is expected to be very advantageous in reel-to-reel applications. The thickness of these SrTiO3 monolayers was large enough to stop the nickel and copper diffusion from the Cu/Ni substrate. Hence, the developed high quality buffer layers are expected to be acting as efficient diffusion barriers and also...
Epitaxial growth of matched metallic ErP0.6As0.4 layers on GaAs

International Nuclear Information System (INIS)

Guivarc'h, A.; Le Corre, A.; Gaulet, J.; Guenais, B.; Minier, M.; Ropars, G.; Badoz, P.A.; Duboz, J.Y.

1990-01-01

Successful growth of (001)ErP 0.6 As 0.4 single crystal film on (001) GaAs has been demonstrated. The epitaxial metallic layers reproducibly showed lattice mismatch below 5 10 -4 . This is, to the authors' knowledge, the first report of a stable, epitaxial and lattice-matched metal/compound semiconductor heterostructure. The ErP 0.6 As 0.4 /n-GaAs diodes yielded excellent I-V characteristics with an ideality factor of 1.1 and barrier height of 0.88 eV. For a 240 Angstrom- thick film, metallic behavior was observed with resistivities of 25 and 86 μΩcm at 1.5 K and room temperature, respectively. As the other Er compounds ErP, ErAs, ErSb and ErSi 2 , ErP 0.6 As 0.4 presents an abrupt drop in resistivity in the vicinity of the liquid helium temperature, due to a paramagnetic to antiferromagnetic phase transition
Methanogens predominate in natural corrosion protective layers on metal sheet piles.

NARCIS (Netherlands)

Kip, Nardy; Jansen, S.; Leite, M.F.A.; De Hollander, M.; Afanasyev, M.; Kuramae, E.E.; van Veen, J.A.

2017-01-01

Microorganisms are able to cause, but also to inhibit or protect against corrosion. Corrosion inhibition by microbial processes may be due to the formation of mineral deposition layers on metal objects. Such deposition layers have been found in archaeological studies on ancient metal objects, buried
Spray coating of self-aligning passivation layer for metal grid lines

NARCIS (Netherlands)

Vuorinen, T.; Janka, M.; Rubingh, J.E.J.M.; Tuukkanen, S.; Groen, P.; Lupo, D.

2014-01-01

In applications such as organic light emitting diodes (OLEDs) or photovoltaic cells a homogenous voltage distribution in the large anode layer needs to be ensured by including a metal grid with a transparent conductor layer. To ensure sufficient conductivity, relatively thick metal lines are used,
Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Science.gov (United States)

Townsend, Nicola J.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

2018-04-01

The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode.
Nonlinear optical properties of ultrathin metal layers

DEFF Research Database (Denmark)

Lysenko, Oleg

2016-01-01

This thesis presents experimental and theoretical studies of nonlinear propagation of ultrashort long-range surface plasmon polaritons in gold strip waveguides. The strip plasmonic waveguides are fabricated in house, and contain a gold layer, adhesion layers, and silicon dioxide cladding. The opt......This thesis presents experimental and theoretical studies of nonlinear propagation of ultrashort long-range surface plasmon polaritons in gold strip waveguides. The strip plasmonic waveguides are fabricated in house, and contain a gold layer, adhesion layers, and silicon dioxide cladding......-order nonlinear susceptibility of the plasmonic mode in the gold strip waveguides significantly depends on the metal layer thickness and laser pulse duration. This dependence is explained in detail in terms of the free-electron temporal dynamics in gold. The third-order nonlinear susceptibility of the gold layer...
Migration energy barriers of symmetric tilt grain boundaries in body-centered cubic metal Fe

International Nuclear Information System (INIS)

Wu, Minghui; Gu, Jianfeng; Jin, Zhaohui

2015-01-01

Graphical abstract: DFT calculated migration energy barrier (left) for symmetric grain boundary in metals is an essential physical property to measure the trend of grain boundary migration, in particular, in terms of the classical homogeneous nucleation model of GB dislocation/disconnection loops (right). - Migration energy barriers of two symmetric tilt grain boundaries in body-centered cubic metal Fe are obtained via first-principles calculations in combination with the nudged elastic band methods. Although the two grain boundaries show similar grain boundary energies, the migration energy barriers are different. Based on a homogeneous nucleation theory of grain-boundary dislocation loops, the calculated energy barrier provides a measure of intrinsic grain-boundary mobility and helps to evaluate effects due to vacancy and interstitial atoms such as carbon
Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

Science.gov (United States)

Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

2017-09-13

Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al 2 O 3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.
Fabrication of metal organic framework materials using a layer-by-layer spin coating approach

KAUST Repository

Eddaoudi, Mohamed; Shekhah, Osama

2016-01-01

Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.
Fabrication of metal organic framework materials using a layer-by-layer spin coating approach

KAUST Repository

Eddaoudi, Mohamed

2016-03-17

Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.
Composite metal foil and ceramic fabric materials

Science.gov (United States)

Webb, Brent J.; Antoniak, Zen I.; Prater, John T.; DeSteese, John G.

1992-01-01

The invention comprises new materials useful in a wide variety of terrestrial and space applications. In one aspect, the invention comprises a flexible cloth-like material comprising a layer of flexible woven ceramic fabric bonded with a layer of metallic foil. In another aspect, the invention includes a flexible fluid impermeable barrier comprising a flexible woven ceramic fabric layer having metal wire woven therein. A metallic foil layer is incontinuously welded to the woven metal wire. In yet another aspect, the invention includes a material comprising a layer of flexible woven ceramic fabric bonded with a layer of an organic polymer. In still another aspect, the invention includes a rigid fabric structure comprising a flexible woven ceramic fabric and a resinous support material which has been hardened as the direct result of exposure to ultraviolet light. Inventive methods for producing such material are also disclosed.
Observed seasonal variability of barrier layer in the Bay of Bengal

Digital Repository Service at National Institute of Oceanography (India)

Pankajakshan, T.; Muraleedharan, P.M.; Rao, R.R.; Somayajulu, Y.K.; Reddy, G.V.; Revichandran, C.

The observed formation of Barrier Layer (BL) and the seasonal variability of BL thickness (BLT) in the Bay of Bengal are examined utilizing the most comprehensive data set. Thick BL (~50m) first appears in the coastal region of the northeastern bay...
Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Liu Zi-Yang; Zhang Jin-Cheng; Duan Huan-Tao; Xue Jun-Shuai; Lin Zhi-Yu; Ma Jun-Cai; Xue Xiao-Yong; Hao Yue

2011-01-01

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Nonlinear transport theory in the metal with tunnel barrier

Science.gov (United States)

Zubov, E. E.

2018-02-01

Within the framework of the scattering matrix formalism, the nonlinear Kubo theory for electron transport in the metal with a tunnel barrier has been considered. A general expression for the mean electrical current was obtained. It significantly simplifies the calculation of nonlinear contributions to the conductivity of various hybrid structures. In the model of the tunnel Hamiltonian, all linear and nonlinear contributions to a mean electrical current are evaluated. The linear approximation agrees with results of other theories. For effective barrier transmission ?, the ballistic transport is realised with a value of the Landauer conductivity equal to ?.
Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

International Nuclear Information System (INIS)

Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

2009-01-01

In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.
Suitability of polystyrene as a functional barrier layer in coloured food contact materials.

Science.gov (United States)

Genualdi, Susan; Addo Ntim, Susana; Begley, Timothy

2015-01-01

Functional barriers in food contact materials (FCMs) are used to prevent or reduce migration from inner layers in multilayer structures to food. The effectiveness of functional barrier layers was investigated in coloured polystyrene (PS) bowls due to their intended condition of use with hot liquids such as soups or stew. Migration experiments were performed over a 10-day period using USFDA-recommended food simulants (10% ethanol, 50% ethanol, corn oil and Miglyol) along with several other food oils. At the end of the 10 days, solvent dyes had migrated from the PS bowls at 12, 1 and 31,000 ng cm(-)(2) into coconut oil, palm kernel oil and Miglyol respectively, and in coconut oil and Miglyol the colour change was visible to the human eye. Scanning electron microscope (SEM) images revealed that the functional barrier was no longer intact for the bowls exposed to coconut oil, palm kernel oil, Miglyol, 10% ethanol, 50% ethanol and goat's milk. Additional tests showed that 1-dodecanol, a lauryl alcohol derived from palm kernel oil and coconut oil, was present in the PS bowls at an average concentration of 11 mg kg(-1). This compound is likely to have been used as a dispersing agent for the solvent dye and aided the migration of the solvent dye from the PS bowl into the food simulant. The solvent dye was not found in the 10% ethanol, 50% ethanol and goat's milk food simulants above their respective limits of detection, which is likely to be due to its insolubility in aqueous solutions. A disrupted barrier layer is of concern because if there are unregulated materials in the inner layers of the laminate, they may migrate to food, and therefore be considered unapproved food additives resulting in the food being deemed adulterated under the Federal Food Drug and Cosmetic Act.
Multilayer moisture barrier

Science.gov (United States)

Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

2015-04-21

A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.
Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

International Nuclear Information System (INIS)

Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

1991-01-01

Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode
Effect of barrier layers in burnthrough experiments with 351-nm laser illumination

International Nuclear Information System (INIS)

Delettrez, J.; Bradley, D.K.; Jaanimagi, P.A.; Verdon, C.P.

1990-01-01

The time-resolved x-ray emission is measured from spherical targets consisting of glass shells overcoated with plastic in which thin signature layers are embedded. These targets are illuminated at 351 nm by the 24-beam OMEGA laser system at the Laboratory for Laser Energetics of the University of Rochester. We measure a large burnthrough rate for bare plastic targets that can only be replicated in one-dimensional hydrodynamic simulations with laser intensities in excess of ten times the nominal intensity. We observe that the burnthrough times are affected by the presence of a thin outer coating (barrier layer). The burnthrough times depend strongly on the barrier-layer material and thickness, whereas one-dimensional simulation results predict only a small effect. Several processes are considered to explain these results: illumination nonuniformity, early shinethrough of the laser light through the plastic, prepulses, filamentation, self-focusing of hot spots, and the Rayleigh-Taylor instability. We conclude that mixing due to the Rayleigh-Taylor instability, enhanced by early shinethrough, is the most probable cause of the observed large burnthrough rates
Ductility prediction of substrate-supported metal layers based on rate-independent crystal plasticity theory

Directory of Open Access Journals (Sweden)

Akpama Holanyo K.

2016-01-01

Full Text Available In this paper, both the bifurcation theory and the initial imperfection approach are used to predict localized necking in substrate-supported metal layers. The self-consistent scale-transition scheme is used to derive the mechanical behavior of a representative volume element of the metal layer from the behavior of its microscopic constituents (the single crystals. The mechanical behavior of the elastomer substrate follows the neo-Hookean hyperelastic model. The adherence between the two layers is assumed to be perfect. Through numerical results, it is shown that the limit strains predicted by the initial imperfection approach tend towards the bifurcation predictions when the size of the geometric imperfection in the metal layer vanishes. Also, it is shown that the addition of an elastomer layer to a metal layer enhances ductility.
Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

International Nuclear Information System (INIS)

Yang, L.Y.; Zhang, D.H.; Li, C.Y.; Foo, P.D.

2004-01-01

Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet resistance, but the poorest thermal stability, while TaN on the ultra-low-k polymer shows the highest resistance but the best thermal stability. The bi-layer Ta/TaN barrier takes the advantage of both Ta and TaN barriers and gives reasonable resistance and thermal stability. The electrical tests indicate that the Cu lines with the TaN and bi-layer Ta/TaN barriers exhibit the smaller leakage current and higher breakdown voltage compared with the Cu lines with the Ta barrier. The better thermal stability of the TaN and the bi-layer Ta/TaN barriers is mainly due to the amorphous/nanostructure and less grain boundaries of the barriers. In addition, the texture discontinuity at the Ta/TaN interfaces in the bi-layers barrier also plays an important role in reducing mutual diffusion of Ta atoms in the Ta barrier and some atoms in the ultra-low-k porous polymer
Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Science.gov (United States)

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).
Heavy metal uptake and leaching from polluted soil using permeable barrier in DTPA-assisted phytoextraction.

Science.gov (United States)

Zhao, Shulan; Shen, Zhiping; Duo, Lian

2015-04-01

Application of sewage sludge (SS) in agriculture is an alternative technique of disposing this waste. But unreasonable application of SS leads to excessive accumulation of heavy metals in soils. A column experiment was conducted to test the availability of heavy metals to Lolium perenne grown in SS-treated soils following diethylene triamine penta acetic acid (DTPA) application at rates of 0, 10 and 20 mmol kg(-1) soil. In order to prevent metal leaching in DTPA-assisted phytoextraction process, a horizontal permeable barrier was placed below the treated soil, and its effectiveness was also assessed. Results showed that DTPA addition significantly increased metal uptake by L. perenne shoots and metal leaching. Permeable barriers increased metal concentrations in plant shoots and effectively decreased metal leaching from the treated soil. Heavy metals in SS-treated soils could be gradually removed by harvesting L. perenne many times in 1 year and adding low dosage of DTPA days before each harvest.
Optical properties of metallic multi-layer films

International Nuclear Information System (INIS)

Dimmich, R.

1991-09-01

Optical properties of multi-layer films consisting of alternating layers of two different metals are studied on the basis of the Maxwell equations and the Boltzmann transport theory. The influence of free-electron scattering at the film external surface and at the interfaces is taken into account and considered as a function of the electromagnetic field frequency and the structure modulation wavelength. Derived formulas for optical coefficients are valid at low frequencies, where the skin effect is nearly classical, as well as in the near-infrared, visible and ultraviolet spectral ranges, where the skin effect has the anomalous nature. It is shown that the obtained results are apparently dependent on the values of the scattering parameters. What is more, the oscillatory nature of analyzed spectra is observed, where the two oscillation periods may appear on certain conditions. The oscillations result from the electron surface and interface scattering and their amplitudes and periods depend on the boundary conditions for free-electron scattering. Finally, the application of the interference phenomenon in dielectric layers is proposed to obtain the enhancement of the non distinct details which can appear in optical spectra of metallic films. (author). 31 refs, 6 figs
Novel doping alternatives for single-layer transition metal dichalcogenides

Science.gov (United States)

Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

2017-11-01

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.
Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films

International Nuclear Information System (INIS)

Lipeles, R.A.; Leung, M.S.; Thiede, D.A.

1990-01-01

This paper reports on barium silicate and barium aluminate films that were studied for use as chemical reaction and diffusion barrier layers for Y 1 Ba 2 Cu 3 O 7-x (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. The authors found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO 3 , also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi 2 O 5 . Although barium silicate and barium aluminate deposited on sapphire formed a BaAl 12 O 19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films
Waves propagating over a two-layer porous barrier on a seabed

Science.gov (United States)

Lin, Qiang; Meng, Qing-rui; Lu, Dong-qiang

2018-05-01

A research of wave propagation over a two-layer porous barrier, each layer of which is with different values of porosity and friction, is conducted with a theoretical model in the frame of linear potential flow theory. The model is more appropriate when the seabed consists of two different properties, such as rocks and breakwaters. It is assumed that the fluid is inviscid and incompressible and the motion is irrotational. The wave numbers in the porous region are complex ones, which are related to the decaying and propagating behaviors of wave modes. With the aid of the eigenfunction expansions, a new inner product of the eigenfunctions in the two-layer porous region is proposed to simplify the calculation. The eigenfunctions, under this new definition, possess the orthogonality from which the expansion coefficients can be easily deduced. Selecting the optimum truncation of the series, we derive a closed system of simultaneous linear equations for the same number of the unknown reflection and transmission coefficients. The effects of several physical parameters, including the porosity, friction, width, and depth of the porous barrier, on the dispersion relation, reflection and transmission coefficients are discussed in detail through the graphical representations of the solutions. It is concluded that these parameters have certain impacts on the reflection and transmission energy.
Thermal shock behavior of toughened gadolinium zirconate/YSZ double-ceramic-layered thermal barrier coating

International Nuclear Information System (INIS)

Zhong, Xinghua; Zhao, Huayu; Zhou, Xiaming; Liu, Chenguang; Wang, Liang; Shao, Fang; Yang, Kai; Tao, Shunyan; Ding, Chuanxian

2014-01-01

Highlights: • Gd 2 Zr 2 O 7 /YSZ DCL thermal barrier coating was designed and fabricated. • The Gd 2 Zr 2 O 7 top ceramic layer was toughened by addition of nanostructured 3YSZ. • Remarkable improvement in thermal shock resistance of the DCL coating was achieved. - Abstract: Double-ceramic-layered (DCL) thermal barrier coating system comprising of toughened Gadolinium zirconate (Gd 2 Zr 2 O 7 , GZ) as the top ceramic layer and 4.5 mol% Y 2 O 3 partially-stabilized ZrO 2 (4.5YSZ) as the bottom ceramic layer was fabricated by plasma spraying and thermal shock behavior of the DCL coating was investigated. The GZ top ceramic layer was toughened by addition of nanostructured 3 mol% Y 2 O 3 partially-stabilized ZrO 2 (3YSZ) to improve fracture toughness of the matrix. The thermal shock resistance of the DCL coating was enhanced significantly compared to that of single-ceramic-layered (SCL) GZ-3YSZ composite coating, which is believed to be primarily attributed to the two factors: (i) the increase in fracture toughness of the top ceramic layer by incorporating nanostructured YSZ particles and (ii) the improvement in strain tolerance through the utilization of 4.5YSZ as the bottom ceramic layer. In addition, the failure mechanisms are mainly attributed to the still low fracture toughness of the top ceramic layer and oxidation of the bond-coat
Single-Layer Limit of Metallic Indium Overlayers on Si(111).

Science.gov (United States)

Park, Jae Whan; Kang, Myung Ho

2016-09-09

Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one sqrt[7]×sqrt[3] phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other sqrt[7]×sqrt[7] phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.
Metal Nanoparticles as Targeted Carriers Circumventing the Blood-Brain Barrier.

Science.gov (United States)

Sintov, A C; Velasco-Aguirre, C; Gallardo-Toledo, E; Araya, E; Kogan, M J

2016-01-01

Metal nanoparticles have been proposed as a carrier and a therapeutic agent in biomedical field because of their unique physiochemical properties. Due to these physicochemical properties, they can be used in different fields of biomedicine. In relation to this, plasmonic nanoparticles can be used for detection and photothermal destruction of tumor cells or toxic protein aggregates, and magnetic iron nanoparticles can be used for imaging and for hyperthermia of tumor cells. In addition, both therapy and imaging can be combined in one nanoparticle system, in a process called theranostics. Metal nanoparticles can be synthesized to modulate their size and shape, and conjugated with different ligands, which allow their application in drug delivery, diagnostics, and treatment of central nervous system diseases. This review is focused on the potential applications of metal nanoparticles and their capability to circumvent the blood-brain barrier (BBB). Although many articles have demonstrated delivery of metal nanoparticles to the brain by crossing the BBB after systemic administration, the percentage of the injected dose that reaches this organ is low in comparison to others, especially the liver and spleen. In connection with this drawback, we elaborate the architecture of the BBB and review possible mechanisms to cross this barrier by engineered nanoparticles. The potential uses of metal nanoparticles for treatment of disorders as well as related neurotoxicological considerations are also discussed. Finally, we bring up for discussion a direct and relatively simpler solution to the problem. We discuss this in detail after having proposed the use of the intranasal administration route as a way to circumvent the BBB. This route has not been extensively studied yet for metal nanoparticles, although it could be used as a research tool for mechanistic understanding and toxicity as well as an added value for medical practice. © 2016 Elsevier Inc. All rights reserved.
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

Czech Academy of Sciences Publication Activity Database

Grym, Jan; Yatskiv, Roman

2013-01-01

Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013
Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se{sub 2} solar cells integration on stainless steel sheet

Energy Technology Data Exchange (ETDEWEB)

Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium); Guaino, Philippe; Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium)

2013-09-02

For the fabrication of monolithically integrated flexible Cu(In, Ga)Se{sub 2}, CIGS modules on stainless steel, individual photovoltaic cells must be insulated from metal substrates by a barrier layer that can sustain high thermal treatments. In this work, a combination of sol–gel (organosilane-sol) and sputtered SiAlxOy forming thin diffusion barrier layers (TDBL) was prepared on stainless steel substrates. The deposition of organosilane-sol dielectric layers on the commercial stainless steel (maximal roughness, Rz = 500 nm and Root Mean Square roughness, RMS = 56 nm) induces a planarization of the surface (RMS = 16.4 nm, Rz = 176 nm). The DC leakage current through the dielectric layers was measured for the metal-insulator-metal (MIM) junctions that act as capacitors. This method allowed us to assess the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non-annealed and annealed samples based on sol–gel double layers. A yield of 100% was achieved for sol–gel double layers reinforced with a sputtered SiAlxOy coating and a third sol–gel monolayer. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could otherwise spoil the electronic and optical properties of CIGS photovoltaic cells. - Highlights: • We functionalize steel for monolithically integrated Cu(In,Ga)Se{sub 2} solar cells • Thin dielectric and diffusion barrier layers (TDDBL) prepared on steel • Reliability and breakdown voltage of dielectric layers have been studied. • Investigation of thermal treatment effect on dielectric
Strain rate effects on localized necking in substrate-supported metal layers

OpenAIRE

BEN BETTAIEB, Mohamed; ABED-MERAIM, Farid

2017-01-01

Due to their good mechanical and technological performances, thin substrate-supported metal layers are increasingly used as functional components in flexible electronic devices. Consequently, the prediction of necking, and the associated limit strains, for such components is of major academic and industrial importance. The current contribution aims to numerically investigate the respective and combined effects of strain rate sensitivity of the metal layer and the addition of an elastomer l...
Factors of the accumulation of heavy metals and metalloids at geochemical barriers in urban soils

Science.gov (United States)

Kosheleva, N. E.; Kasimov, N. S.; Vlasov, D. V.

2015-05-01

The bulk contents and concentrations of mobile (extracted by an ammonium acetate buffer with EDTA) Cd, Pb, Sb, As, Bi, Zn, and Cu were determined in the surface horizons of urban soils in the Eastern administrative okrug of Moscow. The regression analysis showed that the accumulation of these metals and metalloids in the soils is controlled by the physicochemical soil properties and by number of anthropogenic factors and landscape conditions (geochemical position, type of loose deposits, character of land use, dust load, vehicle emissions, building pattern, percent of green areas, and the extent of sealed soils). The precipitation of studied elements on the geochemical barriers had the following regularities: Cd, Cu, and Zn accumulated on the alkaline barriers; Bi, Sb, As, Cu, Pb, and Zn, on chemisorption barriers; Sb, As, and Pb, on organomineral barriers; and Cd and Cu, on the sorption-sedimentation barriers. Technogenic transformation of the physicochemical properties of urban soils resulted in the increase of the mean bulk contents of heavy metals and metalloids by 33-99%; the portion of elements fixed on the geochemical barriers increased by 26-50%.

Asymmetric polymeric membranes containing a metal-rich dense layer with a controlled thickness and method of making same

KAUST Repository

Peinemann, Klaus-Viktor; Villalobos, Vazquez De La Parra Luis Francisco

2016-01-01

A structure, and methods of making the structure are provided in which the structure can include: a membrane having a first layer and a second layer, the first layer comprising polymer chains formed with coordination complexes with metal ions, and the second layer consisting of a porous support layer formed of polymer chains substantially, if not completely, lacking the presence of metal ions. The structure can be an asymmetric polymeric membrane containing a metal-rich layer as the first layer. In various embodiments the first layer can be a metal-rich dense layer. The first layer can include pores. The polymer chains of the first layer can be closely packed. The second layer can include a plurality of macro voids and can have an absence of the metal ions of the first layer.
Asymmetric polymeric membranes containing a metal-rich dense layer with a controlled thickness and method of making same

KAUST Repository

Peinemann, Klaus-Viktor

2016-01-21

A structure, and methods of making the structure are provided in which the structure can include: a membrane having a first layer and a second layer, the first layer comprising polymer chains formed with coordination complexes with metal ions, and the second layer consisting of a porous support layer formed of polymer chains substantially, if not completely, lacking the presence of metal ions. The structure can be an asymmetric polymeric membrane containing a metal-rich layer as the first layer. In various embodiments the first layer can be a metal-rich dense layer. The first layer can include pores. The polymer chains of the first layer can be closely packed. The second layer can include a plurality of macro voids and can have an absence of the metal ions of the first layer.
Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose
Comparative study of the synthesis of layered transition metal molybdates

International Nuclear Information System (INIS)

Mitchell, S.; Gomez-Aviles, A.; Gardner, C.; Jones, W.

2010-01-01

Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT 2 (OH)(MoO 4 ) 2 .H 2 O, where A=NH 4 + , Na + or K + . The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products. - Graphical abstract: Mixed metal oxides (MMOs) derived from layered double hydroxide precursors differ in their reactivity on exposure to aqueous molybdate containing solutions. We investigate the influence of the molybdate source, the rehydration pH and the ratio of T/Mo on the reactivity of some T-Al containing MMOs (T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates of general formula AT 2 (OH)(MoO 4 ) 2 .H 2 O (where A + =NH 4 + , K + or Na + ).
Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.
Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described
The oxidation behavior of classical thermal barrier coatings exposed to extreme temperature

Directory of Open Access Journals (Sweden)

Alina DRAGOMIRESCU

2017-03-01

Full Text Available Thermal barrier coatings (TBC are designed to protect metal surfaces from extreme temperatures and improve their resistance to oxidation during service. Currently, the most commonly used systems are those that have the TBC structure bond coat (BC / top coat (TC layers. The top coat layer is a ceramic layer. Oxidation tests are designed to identify the dynamics of the thermally oxide layer (TGO growth at the interface of bond coat / top coat layers, delamination mechanism and the TBC structural changes induced by thermal conditions. This paper is a short study on the evolution of aluminum oxide protective layer along with prolonged exposure to the testing temperature. There have been tested rectangular specimens of metal super alloy with four surfaces coated with a duplex thermal barrier coating system. The specimens were microscopically and EDAX analyzed before and after the tests. In order to determine the oxide type, the samples were analyzed using X-ray diffraction. The results of the investigation are encouraging for future studies. The results show a direct relationship between the development of the oxide layer and long exposure to the test temperature. Future research will focus on changing the testing temperature to compare the results.
Melt layer behavior of metal targets irradiatead by powerful plasma streams

International Nuclear Information System (INIS)

Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Garkusha, I.E.; Makhlaj, V.A.; Solyakov, D.G.; Tereshin, V.I.; Wuerz, H.

2002-01-01

In this paper melt layer erosion of metal targets under pulsed high-heat loads is studied. Experiments with steel, copper, aluminum and titanium samples were carried out in two plasma accelerator devices with different time durations of the heat load. The surfaces of the resolidified melt layers show a considerable roughness with microcraters and ridge like relief on the surface. For each material the mass loss was determined. Melt layer erosion by melt motion was clearly identified. However it is masked by boiling, bubble expansion and bubble collapse and by formation of a Kelvin-Helmholtz instability. The experimental results can be used for validation of numerical codes which model melt layer erosion of metallic armour materials in off-normal events, in tokamaks
Melt layer behavior of metal targets irradiatead by powerful plasma streams

Energy Technology Data Exchange (ETDEWEB)

Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Garkusha, I.E. E-mail: garkusha@ipp.kharkov.ua; Makhlaj, V.A.; Solyakov, D.G.; Tereshin, V.I.; Wuerz, H

2002-12-01

In this paper melt layer erosion of metal targets under pulsed high-heat loads is studied. Experiments with steel, copper, aluminum and titanium samples were carried out in two plasma accelerator devices with different time durations of the heat load. The surfaces of the resolidified melt layers show a considerable roughness with microcraters and ridge like relief on the surface. For each material the mass loss was determined. Melt layer erosion by melt motion was clearly identified. However it is masked by boiling, bubble expansion and bubble collapse and by formation of a Kelvin-Helmholtz instability. The experimental results can be used for validation of numerical codes which model melt layer erosion of metallic armour materials in off-normal events, in tokamaks.
Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

International Nuclear Information System (INIS)

Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

2014-01-01

The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting
Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

Science.gov (United States)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-01

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.
Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

Science.gov (United States)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-18

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.
First-principles study of hydrogen dissociation and diffusion on transition metal-doped Mg(0 0 0 1) surfaces

International Nuclear Information System (INIS)

Wang, Zhiwen; Guo, Xinjun; Wu, Mingyi; Sun, Qiang; Jia, Yu

2014-01-01

First-principles calculations within the density functional theory (DFT) have been carried out to study hydrogen molecules dissociation and diffusion on clean and transition metals (TMs) doped Mg(0 0 0 1) surfaces following Pozzo et al. work. Firstly, the stability of Mg(0 0 0 1) surface doped with transition metals atom has been studied. The results showed that transition metals on the left of the table tend to substitute Mg in the second layer, while the other transition metals prefer to substitute Mg in the first layer. Secondly, we studied hydrogen molecules dissociation and diffusion on clean and Mg(0 0 0 1) surfaces which the transition metal atoms substituted both in the first layer and second layer. When transition metal atoms substitute in the first layer, the results agree with the Pozzo et al. result; when transition metal atoms substitute in the second layer, the results showed that the transition metals on the left of the periodic table impact on the dissociation barriers is less. However, for the transition metals (Mn, Fe, Co, Ni) on the right, there is a great impact on the barriers. The transition metals doped surfaces bind the dissociated H atoms loosely, making them easily diffused. The results further reveal that the Fe dopant on the Mg surface is the best choice for H 2 dissociation and hydrogen storage.
Modelling of migration from multi-layers and functional barriers: Estimation of parameters

NARCIS (Netherlands)

Dole, P.; Voulzatis, Y.; Vitrac, O.; Reynier, A.; Hankemeier, T.; Aucejo, S.; Feigenbaum, A.

2006-01-01

Functional barriers form parts of multi-layer packaging materials, which are deemed to protect the food from migration of a broad range of contaminants, e.g. those associated with reused packaging. Often, neither the presence nor the identity of the contaminants is known, so that safety assessment
Optical transparency of graphene layers grown on metal surfaces

International Nuclear Information System (INIS)

Rut’kov, E. V.; Lavrovskaya, N. P.; Sheshenya, E. S.; Gall, N. R.

2017-01-01

It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.
Optical transparency of graphene layers grown on metal surfaces

Energy Technology Data Exchange (ETDEWEB)

Rut’kov, E. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lavrovskaya, N. P. [State University of Aerospace Instrumentation (Russian Federation); Sheshenya, E. S., E-mail: sheshenayket@gmail.ru; Gall, N. R. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.
Solar Cycle Response and Long-Term Trends in the Mesospheric Metal Layers

Science.gov (United States)

Dawkins, E. C. M.; Plane, J. M. C.; Chipperfield, M.; Feng, W.; Marsh, D. R.; Hoffner, J.; Janches, D.

2016-01-01

The meteoric metal layers (Na, Fe, and K) which form as a result of the ablation of incoming meteors act as unique tracers for chemical and dynamical processes that occur within the upper mesosphere lower thermosphere region. In this work, we examine whether these metal layers are sensitive Fe indicators of decadal long-term changes within the upper atmosphere. Output from a whole-atmosphere climate model is used to assess the response of the Na, K, and Fe layers across a 50 year period (1955-2005). At short timescales, the K layer has previously been shown to exhibit a very different seasonal behavior compared to the other metals. Here we show that this unusual behavior is also exhibited at longer time scales (both the 11 year solar cycle and 50 year periods), where K displays a much more pronounced response to atmospheric temperature changes than either Na or Fe. The contrasting solar cycle behavior of the K and Na layers predicted by the model is confirmed using satellite and lidar observations for the period 2004-2013.
Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

International Nuclear Information System (INIS)

Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

2007-01-01

An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water
Wear resistance of layers hard faced by the high-alloyed filler metal

OpenAIRE

Dušan Arsić; Vukić Lazić; Ruzica R. Nikolic; Milan Mutavdžić; Srbislav Aleksandrović; Milan Djordjević

2016-01-01

The objective of this work was to determine the wear resistance of layers hard faced by the high-alloyed filler metal, with or without the austenite inter-layer, on parts that operate at different sliding speeds in conditions without lubrication. The samples were hard faced with the filler metal E 10-UM-60-C with high content of C, Cr and W. Used filler metal belongs into group of alloys aimed for reparatory hard facing of parts damaged by abrasive and erosive wear and it is characterized by ...
Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides

Science.gov (United States)

Lu, Haichang; Guo, Yuzheng; Robertson, John

2016-08-01

The Schottky Barrier Heights (SBH) of metal layers on top of monolayer hexagonal X-nitrides (X = B, Al, Ga, and h-XN) are calculated using supercells and density functional theory so as to understand the chemical trends of contact formation on graphene and the 2D layered semiconductors such as the transition metal dichalcogenides. The Fermi level pinning factor S of SBHs on h-BN is calculated to be nearly 1, indicating no pinning. For h-AlN and h-GaN, the calculated pinning factor is about 0.63, less than for h-BN. We attribute this to the formation of stronger, chemisorptive bonds between the nitrides and the contact metal layer. Generally, the h-BN layer remains in a planar sp2 geometry and has weak physisorptive bonds to the metals, whereas h-AlN and h-GaN buckle out of their planar geometry which enables them to form the chemisorptive bonds to the metals.

Anatomy-performance correlation in Ti-based contact metallizations on AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Mohammed, Fitih M.; Wang, Liang; Koo, Hyung Joon; Adesida, Ilesanmi

2007-01-01

A comprehensive study of the electrical and surface microstructural characteristics of Ti/Au, Ti/Al/Au, Ti/Mo/Au, and Ti/Al/metal/Au schemes, where metal is Ir, Mo, Nb, Pt, Ni, Ta, and Ti, has been carried out to determine the role of constituent components of multilayer contact metallizations on Ohmic contact formation on AlGaN/GaN heterostructures. Attempts have been made to elucidate the anatomy (composition-structure) performance correlation in these schemes. Evidences have been obtained for the necessity of the Al and metal barrier layer as well as an optimal amount of Ti for achieving low-resistance Ohmic contact formation. A strong dependence of electrical properties and intermetallic interactions on the type of metal barrier layer used was found. Scanning electron microscopy characterization, coupled with energy dispersive x-ray spectroscopy, has shown evidence for alloy aggregation, metal layer fragmentation, Al-Au solid solution formation, and possible Au and/or Al reaction with metal layer. Results from the present study provide insights on the active and the necessary role various components of a multilayer contact metallization play for obtaining excellent Ohmic contact formation in the fabrication of AlGaN/GaN high electron mobility transistors
ANTIREFLECTION MULTILAYER COATINGS WITH THIN METAL LAYERS

Directory of Open Access Journals (Sweden)

L. A. Gubanova

2016-03-01

Full Text Available The design of anti-reflective coatings for metal surfaces of Al, Ti, N,i Cr is proposed. The coatings have the form of alternating layers of dielectric/metal/dielectric with the number of cells up to15. The method of calculation of such coatings is proposed. We have calculated the coatings of the type [HfO2/Cr/HfO2]15, [ZrO2/Ti/Al2O3]15, [ZrO2/Cr/ZrO2]15. It is shown that the proposed interference coatings provide reduction of the residual reflectance of the metal several times (from 3.5 to 6.0 in a wide spectral range (300-1000 nm. The proposed coatings can be recommended as anti-reflective coatings for energy saving solar systems and batteries, and photovoltaic cells.
Diffusion barrier performances of thin Mo, Mo-N and Mo/Mo-N films between Cu and Si

International Nuclear Information System (INIS)

Song Shuangxi; Liu Yuzhang; Mao Dali; Ling Huiqin; Li Ming

2005-01-01

In this work, we have studied the diffusion barrier performances of Mo, Mo-N and Mo/Mo-N metallization layers deposited by sputtering Mo in Ar/N 2 atmospheres, respectively. Samples were subsequently annealed at different temperatures ranging from 400 to 800 deg C in vacuum condition. The film properties and their suitability as diffusion barriers and protective coatings in silicon devices were characterized using four-point probe measurement, X-ray diffractometry, scanning electron microscopy, Auger electron spectroscopy and transmission electron microscopy analyses. Experimental results revealed that the Mo (20 nm)/Mo-N (30 nm) layer was able to prevent the diffusion reaction between Cu and Si substrate after being annealed at 600 deg C for 30 min. The adhesion between layers and the content of N atoms are the key parameters to improve the properties of Mo-based barrier materials. The Mo layer interposed between Cu and Mo-N diluted the high nitrogen concentration of the barrier and so enhanced the barrier performances
A high rotational barrier for physisorbed hydrogen in an fcu-metal-organic framework

KAUST Repository

Pham, Tony T.; Forrest, Katherine A.; Georgiev, Peter A L; Lohstroh, Wiebke; Xue, Dongxu; Hogan, Adam; Eddaoudi, Mohamed; Space, Brian; Eckert, Juergen

2014-01-01

A combined inelastic neutron scattering (INS) and theoretical study of H2 sorption in Y-FTZB, a recently reported metal-organic framework (MOF) with fcu topology, reveals that the strongest binding site in the MOF causes a high barrier to rotation on the sorbed H2. This rotational barrier for H2 is the highest yet of reported MOF materials based on physisorption. This journal is
Hydration forces and liquid-like layer on the ice/metal interface

International Nuclear Information System (INIS)

Daikhin, Leonid; Tsionsky, Vladimir

2007-01-01

A model to describe the phenomenon of the liquid-like layer is proposed. It is based on the theory of the hydration forces proposed by Gruen and Marcelja (1983 J. Chem. Soc. Faraday Trans. II 79 225), taking into account the influence of ions on the free energy of water. The model was applied to experimental data obtained with the quartz-crystal microbalance, in a study of the liquid-like layer between metal and frozen aqueous electrolytes and between metal and ice
Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Science.gov (United States)

Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

2000-03-01

Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.
MATERIAL DEPENDENCE OF TEMPERATURE DISTRIBUTION IN MULTI-LAYER MULTI-METAL COOKWARE

Directory of Open Access Journals (Sweden)

MOHAMMADREZA SEDIGH

2017-09-01

Full Text Available Laminated structure is becoming more popular in cookware markets; however, there seems to be a lack of enough scientific studies to evaluate its pros and cons, and to show that how it functions. A numerical model using a finite element method with temperature-dependent material properties has been performed to investigate material and layer dependence of temperature distribution in multi-layer multi-metal plate exposed to irregular heating. Behavior of two parameters including mean temperature value and uniformity on the inner surface of plate under variations of thermal properties and geometrical conditions have been studied. The results indicate that conductive metals used as first layer in bi-layer plates have better thermal performance than those used in the second layer. In addition, since cookware manufacturers increasingly prefer to use all-clad aluminium plate, recently, this structure is analysed in the present study as well. The results show all-clad copper and aluminum plate possesses lower temperature gradient compared with single layer aluminum and all-clad aluminum core plates.
Simulation of Nanowires on Metal Vicinal Surfaces: Effect of Growth Parameters and Energetic Barriers

Science.gov (United States)

Hamouda, Ajmi B. H.; Blel, Sonia; Einstein, T. L.

2012-02-01

Growing one-dimensional metal structures is an important task in the investigation of the electronic and magnetic properties of new devices. We used kinetic Monte-Carlo (kMC) method to simulate the formation of nanowires of several metallic and non-metallic adatoms on Cu and Pt vicinal surfaces. We found that mono-atomic chains form on step-edges due to energetic barriers (the so-called Ehrlich-shwoebel and exchange barriers) on step-edge. Creation of perfect wires is found to depend on growth parameters and binding energies. We measure the filling ratio of nanowires for different chemical species in a wide range of temperature and flux. Perfect wires were obtained at lower deposition rate for all tested adatoms, however we notice different temperature ranges. Our results were compared with experimental ones [Gambardella et al., Surf. Sci.449, 93-103 (2000), PRB 61, 2254-2262, (2000)]. We review the role of impurities in nanostructuring of surfaces [Hamouda et al., Phys. Rev. B 83, 035423, (2011)] and discuss the effect of their energetic barriers on the obtained quality of nanowires. Our work provides experimentalists with optimum growth parameters for the creation of a uniform distribution of wires on surfaces.
Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.
Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.
Surface layers in the 4A group metals with implanted silicon ions

International Nuclear Information System (INIS)

Kovneristyj, Yu.K.; Vavilova, V.V.; Krasnopevtsev, V.V.; Galkin, L.N.; Kudyshev, A.N.; Klechkovskaya, V.V.

1987-01-01

A study was made on the change of structure and phase composition of fine near the surface layers of 4A group metals (Hf, Zr, Ti) during ion Si implantation and successive thermal annealing at elevated temperatures. Implantation of Si + ions with 30 or 16 keV energy in Ti, Zr and Hf at room temperature results to amorphization of metal surface layer. The surface hafnium and titanium layer with implanted Si atoms due to interaction with residual atmosphere of oxygen turns during annealing at 870 K to amorphous solid solution of HfO 2m or TiO 2 with Si, preventing further metal oxidation; layers of amorphous alloy are characterized by thermal stability up to 1270 K. Oxidation of the surface amorphous layer in residual oxygen atmosphere and its crystallization in ZrO 2 take place in result of Zr annealing with implanted Si ions at temperature not exceeding 870 K. Similar phenomena are observed in the case of hafnium with implanted oxygen ions or small dose of silicon ions. Thermal stability of amorphous layers produced during ion implantation of Si in Ti, Zr and Hf corresponds to scale resistance of monolithic alloys in Ti-Si, Zr-Si and Hf-Si systems
Metal ion-specific thermal stability of bacterial S-Layers

Energy Technology Data Exchange (ETDEWEB)

Drobot, Bjoern; Raff, Johannes [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Div. Biogeochemistry; Fahmy, Karim [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Div. Biophysics

2016-07-01

Many bacteria are covered by a surface layer (S-layer), i.e., a para-crystalline two-dimensional array of proteins which control cell shape, act as molecular sieves and have potential applications as radionuclide-binding material for bioremediation of polluted areas. Knowledge and control of the metal-dependent stability of the purified proteins is required for their technical application. Here, we have explored by differential scanning calorimetry the thermal stability of the S-layer protein slp-B53 from Lysinibacillus sphaericus, a Gram-positive bacterium isolated from a uranium mining waste pile [1].
Characterization of Transition Metal Carbide Layers Synthesized by Thermo-reactive Diffusion Processes

DEFF Research Database (Denmark)

Laursen, Mads Brink; Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin

2015-01-01

. In this study halide-activated pack cementation techniques were used on tool steel Vanadis 6 and martensitic stainless steel AISI 420 in order to produce hard layers of titanium carbide (TiC), vanadium carbide (V8C7) and chromium carbides (Cr23C6 and Cr7C3). Surface layers were characterized by scanning......Hard wear resistant surface layers of transition metal carbides can be produced by thermo-reactive diffusion processes where interstitial elements from a steel substrate together with external sources of transition metals (Ti, V, Cr etc.) form hard carbide and/or nitride layers at the steel surface...... electron microscopy, X-ray diffraction and Vickers hardness testing. The study shows that porosityfree, homogenous and very hard surface layers can be produced by thermo-reactive diffusion processes. The carbon availability of the substrate influences thickness of obtained layers, as Vanadis 6 tool steel...
Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

Science.gov (United States)

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.
Fabrication of metallic nanomasks by transfer of self-organized nanodot patterns from semiconductor material into thin metallic layers

International Nuclear Information System (INIS)

Bobek, T.; Kurz, H.

2007-01-01

The basic understanding of the formation of highly regular nanostructures during ion erosion of amorphous GaSb layers is revised. The essential physical parameters for the formation of the highly regular dot pattern are discussed. Numerical modelling based on the stabilized isotropic Kuramoto-Sivashinsky equation is presented and discussed. The experimental part of this contribution presents the successful pattern transfer into metallic buried thin layers as well as into Silicon underlayers. The critical conditions for this transfer technique are discussed. Application potential of using this self-organization scheme for the generation of highly regular patterns in ferromagnetic metal layers as well as in crystalline silicon is estimated
Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

Science.gov (United States)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.
Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-07-15

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.
Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

Science.gov (United States)

Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

2018-05-01

The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.
Layered Metal Nanoparticle Structures on Electrodes for Sensing, Switchable Controlled Uptake/Release, and Photo-electrochemical Applications.

Science.gov (United States)

Tel-Vered, Ran; Kahn, Jason S; Willner, Itamar

2016-01-06

Layered metal nanoparticle (NP) assemblies provide highly porous and conductive composites of unique electrical and optical (plasmonic) properties. Two methods to construct layered metal NP matrices are described, and these include the layer-by-layer deposition of NPs, or the electropolymerization of monolayer-functionalized NPs, specifically thioaniline-modified metal NPs. The layered NP composites are used as sensing matrices through the use of electrochemistry or surface plasmon resonance (SPR) as transduction signals. The crosslinking of the metal NP composites with molecular receptors, or the imprinting of molecular recognition sites into the electropolymerized NP matrices lead to selective and chiroselective sensing interfaces. Furthermore, the electrosynthesis of redox-active, imprinted, bis-aniline bridged Au NP composites yields electrochemically triggered "sponges" for the switchable uptake and release of electron-acceptor substrates, and results in conductive surfaces of electrochemically controlled wettability. Also, photosensitizer-relay-crosslinked Au NP composites, or electrochemically polymerized layered semiconductor quantum dot/metal NP matrices on electrodes, are demonstrated as functional nanostructures for photoelectrochemical applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

Surface metal standards produced by ion implantation through a removable layer

International Nuclear Information System (INIS)

Schueler, B.W.; Granger, C.N.; McCaig, L.; McKinley, J.M.; Metz, J.; Mowat, I.; Reich, D.F.; Smith, S.; Stevie, F.A.; Yang, M.H.

2003-01-01

Surface metal concentration standards were produced by ion implantation and investigated for their suitability to calibrate surface metal measurements by secondary ion mass spectrometry (SIMS). Single isotope implants were made through a 100 nm oxide layer on silicon. The implant energies were chosen to place the peak of the implanted species at a depth of 100 nm. Subsequent removal of the oxide layer was used to expose the implant peak and to produce controlled surface metal concentrations. Surface metal concentration measurements by time-of-flight SIMS (TOF-SIMS) with an analysis depth of 1 nm agreed with the expected surface concentrations of the implant standards with a relative mean standard deviation of 20%. Since the TOF-SIMS relative sensitivity factors (RSFs) were originally derived from surface metal measurements of surface contaminated silicon wafers, the agreement implies that the implant standards can be used to measure RSF values. The homogeneity of the surface metal concentration was typically <10%. The dopant dose remaining in silicon after oxide removal was measured using the surface-SIMS protocol. The measured implant dose agreed with the expected dose with a mean relative standard deviation of 25%
Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

Science.gov (United States)

Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

2011-03-04

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.
Structural variations in layered alkaline earth metal cyclohexyl ...

Indian Academy of Sciences (India)

Administrator

because of the entrance of the guest molecules between the layers, there will be a change in the interlayer distance (Alberti 1978). Although M(IV) organo-phos- phonates are well documented, the chemistry of M(II) organophosphonates especially the alkaline earth metal organophosphonates has been explored marginally ...
Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2013-01-01

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures
Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.
Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Science.gov (United States)

Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

2017-10-01

NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.
Micro-fabricated Liquid Encapsulated Energy Harvester with Polymer Barrier Layer as Liquid Electret Interface

International Nuclear Information System (INIS)

Bu, L; Xu, H Y; Xu, B J; Song, L

2014-01-01

This paper addresses the electret discharge issue for liquid based electret energy harvesters. An interface structure of PDMS/PTFE polymer barrier layer between liquid and electrets is introduced, achieving 75% charge retain rate over 100h, compared with 0% without the proposed layer over 100h. Further, the PDMS/PTFE layer is introduced into liquid encapsulated energy harvester (LEEH) and is compatible with micro-fabrication process. The retain rate of device voltage is about 47%∼65% over 100h. At 100h after corona charging, the device generates maximally 3.7V, 0.55μW @1Hz rotation
EDTA-assisted phytoextraction of heavy metals by turfgrass from municipal solid waste compost using permeable barriers and associated potential leaching risk.

Science.gov (United States)

Zhao, Shulan; Lian, Fei; Duo, Lian

2011-01-01

A column experiment with horizontal permeable barriers was conducted to investigate phytoextraction of heavy metals by Lolium perenne L. from municipal solid waste compost following EDTA application, as well as to study the effects of L. perenne and permeable barriers on preventing metal from leaching. In columns with barriers, EDTA addition yielded maximum concentrations of Cu, Zn and Pb of 155, 541 and 33.5 mg kg(-1) in shoot, respectively. This led to 4.2, 2.1 and 7.4 times higher concentrations of Cu, Zn and Pb compared to treatment with no chelating agent, respectively. In treatments with 10 mmol kg(-1) EDTA, the barriers reduced leaching of Cu, Zn and Pb by approximately three times, respectively, resulting in leaching of total initial Cu, Zn and Pb by 27.3%, 25.2% and 28.8%, respectively, after four times' irrigation. These results indicate that L. perenne and permeable barriers are effective to reduce leaching of heavy metals and minimize the risk of contaminating groundwater in EDTA-enhanced phytoremediation. Thus these findings highlight that turfgrass and permeable barriers can effectively prevent metal leaching. Copyright Â© 2010 Elsevier Ltd. All rights reserved.
Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

Science.gov (United States)

Campbell, I. H.; Rubin, S.; Zawodzinski, T. A.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1996-11-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.
Selective and low temperature transition metal intercalation in layered tellurides

Science.gov (United States)

Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

2016-01-01

Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540
Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

KAUST Repository

Anasori, Babak

2016-02-24

In this study, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M′2M′′C2 and M′2M′′2C3 – where M′ and M′′ are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M′ atoms only occupy the outer layers and the M′′ atoms fill the middle layers. In other words, M′ atomic layers sandwich the middle M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. This finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.
On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

International Nuclear Information System (INIS)

Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

2015-01-01

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In 0.232 Al 0.594 Ga 0.174 As/Al 0.355 Ga 0.645 As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution
Performance modeling of concrete/metal barriers used in low-level waste disposal

International Nuclear Information System (INIS)

Shuman, R.; Chau, Nam; Icenhour, A.S.; Godbee, H.W.; Tharp, M.L.

1993-01-01

Low-Level radioactive wastes generated in government and commercial operations involving nuclear materials need to be isolated from the environment almost in perpetuity. An increasing number of disposal sites are using concrete/metal barriers (so called ''engineered'' barriers) to isolate these wastes from the environment. Two major concerns hamper the use of engineered barriers; namely, the lack of ability to reliably predict the service life of these barriers and to estimate the confidence level of the service life predicted. Computer codes (SOURCE1 and SOURCE2) for estimating the long-term (centuries to millennia) service life of these barriers are presented. These codes use mathematical models (based on past observations, currently accepted data, and established theories) to predict behavior into the future. Processes modeled for concrete degradation include sulfate attack, calcium hydroxide leaching, and reinforcement corrosion. The loss of structural integrity due to cracking is also modeled. Mechanisms modeled for nuclide leaching include advection and diffusion. The coupled or linked effects of these models are addressed in the codes. Outputs from the codes are presented and analyzed
Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

Science.gov (United States)

Ocak, Yusuf Selim; Gul Guven, Reyhan; Tombak, Ahmet; Kilicoglu, Tahsin; Guven, Kemal; Dogru, Mehmet

2013-06-01

A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78 eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58 eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100 mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65 eV band gap value obtained from optical method.
Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

Science.gov (United States)

Lessing, Paul A [Idaho Falls, ID

2008-07-22

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.
Hydrogen permeation resistant layers for liquid metal reactors

International Nuclear Information System (INIS)

McGuire, J.C.

1980-03-01

Reviewing the literature in the tritium diffusion field one can readily see a wide divergence in results for both the response of permeation rate to pressure, and the effect of oxide layers on total permeation rates. The basic mechanism of protective oxide layers is discussed. Two coatings which are less hydrogen permeable than the best naturally occurring oxide are described. The work described is part of an HEDL-ANL cooperative research program on Tritium Permeation in Liquid Metal Cooled Reactors. This includes permeation work on hydrogen, deuterium, and tritium with the hydrogen-deuterium research leading to the developments presented
Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

Energy Technology Data Exchange (ETDEWEB)

Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

2017-12-15

HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)
Energy loss from internal reflection off metal layers on glass

Science.gov (United States)

McDowell, M. W.; Bezuidenhout, D. F.; Klee, H. W.; Theron, E.

1983-12-01

The reflection characteristics of metal layers are considered for the situation where the electromagnetic radiation is incident from the glass side. Theoretical and measured reflectance values are presented which indicate that for some metals the reflection has a strong dependence on the refractive index of the incident medium. Some examples are given of recent cases where the above results were an important consideration in the choice of the metallic reflecting material. These results indicate that aluminium should not be automatically considered the best choice for the visible region nor gold for the infra-red.
Structural properties of ultraviolet cured polysilazane gas barrier layers on polymer substrates

International Nuclear Information System (INIS)

Morlier, Arnaud; Cros, Stéphane; Garandet, Jean-Paul; Alberola, Nicole

2014-01-01

Perhydropolysilazane (PHPS) conversion to silica through high energy ultraviolet irradiation has been studied. Precursor conversion speed and structural properties of the UV cured PHPS have been investigated and showed that this conversion method is fast but that complete conversion into silica is not achieved in an oxygen depleted atmosphere for layer thicknesses higher than 30 nm, resulting in a composite structure with concentration gradients. We further show that Fourier transform infrared spectroscopy data allow investigating the local structure and composition over the depth of the obtained layers. Gas permeability of the thin UV cured PHPS layers deposited on polymers has been studied. We used a high sensitivity permeation measurement technique to determine water vapor and oxygen permeabilities of the barrier layers and show the correlation between helium, oxygen and water permeability of these materials. Oxygen and water vapor transmission rates of respectively 0.06 cm 3 /m 2 /day/bar and 0.2 g/m 2 /day have been obtained with layers deposited on a polymer substrate. - Highlights: • Perhydropolysilazane has been converted into dense layers by vacuum UV irradiation. • Cured perhydropolysilazane layers have an inhomogeneous structure. • The cured material consists in 3 spontaneously formed layers. • Oxygen and water transmission rates of 0.06 cm 3 /m 2 /day/bar and 0.02 g/m 2 /day are reached
Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer

International Nuclear Information System (INIS)

Liu, B.T.; Yan, X.B.; Zhang, X.; Zhou, Y.; Guo, Y.N.; Bian, F.; Zhang, X.Y.

2009-01-01

Ni-Ti films prepared at 10 W and 70 W by rf magnetron sputtering are investigated as the oxygen diffusion barrier layer, it is found that crystallinity of Ni-Ti film does not greatly depend on the deposition power. X-ray photoelectron spectroscopy indicates that Ni is still in the form of metallic state from the binding energies of both Ni 2p 3/2 and Ni 2p 1/2 spectra for the sample with 10 W prepared Ni-Ti, however, Ni is oxidized for 70 W prepared Ni-Ti film. Moreover, the (La 0.5 Sr 0.5 )CoO 3 /Pb(Zr 0.40 Ti 0.60 )O 3 /(La 0.5 Sr 0.5 )CoO 3 capacitor grown on high power prepared Ni-Ti film is leaky, however, the capacitor on low power prepared Ni-Ti film possesses very promising physical properties (i.e. remnant polarization of ∼27 μC/cm 2 at 5 V and maximum dielectric constant of 940). Leakage current density of the capacitor grown on low power prepared Ni-Ti film is further investigated, it meets ohmic behavior ( 1.0 V).

Promoting Barrier Performance and Cathodic Protection of Zinc-Rich Epoxy Primer via Single-Layer Graphene

Directory of Open Access Journals (Sweden)

Jingrong Liu

2018-05-01

Full Text Available The effect of single-layer graphene sheets (Gr on the corrosion protection of zinc-rich epoxy primers (ZRPs was investigated. Scanning electron microscopy (SEM with an energy dispersive spectrometer (EDS were used to characterize morphology and composition of the coatings after immersion for 25 days. The cross-sectional SEM images and X-ray photoelectron spectroscopy (XPS confirmed that the addition of single-layer graphene facilitated assembling of zinc oxides on the interface between the coating and the steel. The open circuit potential (OCP, electrochemical impedance spectroscopy (EIS measurements revealed that both the cathodic protection and barrier performance of the ZRP were enhanced after addition of 0.6 wt. % Gr (Gr0.6-ZRP. In addition, the cathodic protection property of the Gr0.6-ZRP was characterized quantitatively by localized electrochemical impedance spectroscopy (LEIS in the presence of an artificial scratch on the coating. The results demonstrate that moderate amounts of single-layer graphene can significantly improve corrosion resistance of ZRP, due to the barrier protection and cathodic protection effects.
Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

International Nuclear Information System (INIS)

Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

2013-01-01

The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)
Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer

International Nuclear Information System (INIS)

Zhao Geng; Cheng Xiao-Man; Du Bo-Qun; Tian Hai-Jun; Liang Xiao-Yu

2011-01-01

We fabricate pentacene-based organic field effect transistors (OFETs), inserting a transition metal oxide (V 2 O 5 ) layer between the pentacene and Al source-drain (S/D) electrodes. The performance of the devices with V 2 O 5 /Al S/D electrodes is considerably improved compared to the pentacene-based OFET with only Al S/D electrodes. After the 10-nm V 2 O 5 layer modification, the effective field-effect mobility of the devices increases from 2.7 × 10 −3 cm 2 /V·s to 8.93× 10 −1 cm 2 /V·s. Owing to the change of the injection property, the effective threshold voltage (V th ) is changed from −7.5 V to −5 V and the on/off ratio shifts from 10 2 to 10 4 . Moreover, the dispersion of sub-threshold current in the devices disappears. These performance improvements are ascribed to the low carrier injection barrier and the reduction of contact resistance. It is indicated that V 2 O 5 layer modification is an effective approach to improve pentacene-based OFET performance. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

Energy Technology Data Exchange (ETDEWEB)

Shenghui, Lu; Jiangfeng, Du; Qian, Luo; Qi, Yu; Wei, Zhou; Jianxin, Xia; Mohua, Yang, E-mail: lushenghui@sohu.co [State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al-GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I-full depletion, II-partial depletion, III-neutral region and IV-electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model. (semiconductor devices)
Heterogeneous reactions of dioctahedral smectites in illite-smectite and kaolinite-smectite mixed-layers: applications to clay materials for engineered barriers

International Nuclear Information System (INIS)

Meunier, A.; Proust, D.; Beaufort, D.; Lajudie, A.; Petit, J.-C.

1992-01-01

The clay materials selected for use in the engineered barriers of the French nuclear waste isolation programme are mainly composed of dioctahedral smectite, either bentonite of Wyoming type or kaolinite-smectites most often consist of randomly stacked layers with low and high charges. In the case of the Wyoming-type bentonite, these two differently charged layers do not react in the same way when subjected to hydrothermal alteration. Overall, the low-charge smectite layers react to form high-charge smectite layers + quartz + kaolinite. Then, fixing K ions, the high-charge smectite layers are transformed into illite-smectite mixed-layers (I/S) when the temperature conditions increase. A symmetrical process is observed in natural or experimental hydrothermal conditions when the high-charge smectite layers of I/S minerals react with quartz and/or kaolinite to produce low-charge smectite layers. The chemical properties of the bentonite-engineered barriers clearly depend on the low charge/high charge smectite layer proportion, which is in turn controlled by the temperature-dependent reactions in the vicinity of the waste disposal. Although there are fewer published data on the kaolinite-smectite mixed-layered minerals (K/S), a similar low charge-high charge reaction appears to affect their smectite component. The experimental alteration of K/S leads to the formation of a low-charge beidellite with an increase in the cation-exchange capacity and in the expandability of the clay material. Thus, the properties of the engineered barrier seems to be improved after hydrothermal alteration. (Author)
Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

International Nuclear Information System (INIS)

Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

2014-01-01

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond
Production of metal fullerene surface layer from various media in the process of steel carbonization

Directory of Open Access Journals (Sweden)

KUZEEV Iskander Rustemovich

2018-04-01

Full Text Available Studies devoted to production of metal fullerene layer in steels when introducing carbon from organic and inorganic media were performed. Barium carbonate was used as an inorganic medium and petroleum pitch was used as an organic medium. In order to generate the required amount of fullerenes in the process of steel samples carbonization, optimal temperature mode was found. The higher temperature, absorption and cohesive effects become less important and polymeric carbon structures destruction processes become more important. On the bottom the temperature is limited by petroleum pitch softening temperature and its transition to low-viscous state in order to enhance molecular mobility and improve the possibility of their diffusion to metal surface. Identification of fullerenes in the surface modified layer was carried out following the methods of IR-Fourier spectrometry and high-performance liquid chromatography. It was found out that nanocarbon structures, formed during carbonization in barium carbonate and petroleum pitch mediums, possess different morphology. In the process of metal carbonization from carbonates medium, the main role in fullerenes synthesis is belonged to catalytic effect of surface with generation of endohedral derivatives in the surface layer; but in the process of carbonization from pitch medium fullerenes are formed during crystallization of the latter and crystallization centers are of fullerene type. Based on theoretical data and dataof spectral and chromatographic analysis, optimal conditions of metal fullerene layer formation in barium carbonate and petroleum pitch mediums were determined. Low cohesion of layer, modified in barium carbonate medium, with metal basis was discovered. That was caused by limited carbon diffusion in the volume of α-Fe. According to the detected mechanism of fullerenes formation on steel surface in gaseous medium, fullerenes are formed on catalytic centers – ferrum atoms, forming thin metal
Novel Thiol-Ene Hybrid Coating for Metal Protection

Directory of Open Access Journals (Sweden)

Mona Taghavikish

2016-04-01

Full Text Available A novel hybrid anticorrosion coating with dual network of inorganic (Si–O–Si and organic bonds (C–S–C was prepared on metal through an in situ sol-gel and thiol-ene click reaction. This novel interfacial thin film coating incorporates (3-mercaptopropyl trimethoxysilane (MPTS and 1,4-di(vinylimidazolium butane bisbromide based polymerizable ionic liquid (PIL to form a thiol-ene based photo-polymerized film, which on subsequent sol-gel reaction forms a thin hybrid interfacial layer on metal surface. On top of this PIL hybrid film, a self-assembled nanophase particle (SNAP coating was employed to prepare a multilayer thin film coating for better corrosion protection and barrier performance. The novel PIL hybrid film was characterised for structure and properties using Fourier transform infrared spectroscopy (FTIR, differential scanning calorimetry (DSC, and thermogravimetric analysis (TGA. The corrosion protection performance of the multilayer coating was examined using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS. The results reveal that this novel double layer coating on metal offers excellent protection against corrosion and has remarkably improved the barrier effect of the coating.
Thermal Rayleigh-Marangoni convection in a three-layer liquid-metal-battery model

Science.gov (United States)

Köllner, Thomas; Boeck, Thomas; Schumacher, Jörg

2017-05-01

The combined effects of buoyancy-driven Rayleigh-Bénard convection (RC) and surface tension-driven Marangoni convection (MC) are studied in a triple-layer configuration which serves as a simplified model for a liquid metal battery (LMB). The three-layer model consists of a liquid metal alloy cathode, a molten salt separation layer, and a liquid metal anode at the top. Convection is triggered by the temperature gradient between the hot electrolyte and the colder electrodes, which is a consequence of the release of resistive heat during operation. We present a linear stability analysis of the state of pure thermal conduction in combination with three-dimensional direct numerical simulations of the nonlinear turbulent evolution on the basis of a pseudospectral method. Five different modes of convection are identified in the configuration, which are partly coupled to each other: RC in the upper electrode, RC with internal heating in the molten salt layer, and MC at both interfaces between molten salt and electrode as well as anticonvection in the middle layer and lower electrode. The linear stability analysis confirms that the additional Marangoni effect in the present setup increases the growth rates of the linearly unstable modes, i.e., Marangoni and Rayleigh-Bénard instability act together in the molten salt layer. The critical Grashof and Marangoni numbers decrease with increasing middle layer thickness. The calculated thresholds for the onset of convection are found for realistic current densities of laboratory-sized LMBs. The global turbulent heat transfer follows scaling predictions for internally heated RC. The global turbulent momentum transfer is comparable with turbulent convection in the classical Rayleigh-Bénard case. In summary, our studies show that incorporating Marangoni effects generates smaller flow structures, alters the velocity magnitudes, and enhances the turbulent heat transfer across the triple-layer configuration.
Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

Energy Technology Data Exchange (ETDEWEB)

Guzman, L., E-mail: luisg47@gmail.com [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy); Vettoruzzo, F. [Ronda High Tech, via Vegri 83, 36010 Zane’, Vicenza (Italy); Laidani, N. [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy)

2016-02-29

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al{sub 2}O{sub 3}, TiO{sub 2}) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al{sub 2}O{sub 3}, TiO{sub 2}, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and
Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

International Nuclear Information System (INIS)

Guzman, L.; Vettoruzzo, F.; Laidani, N.

2016-01-01

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al_2O_3, TiO_2) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al_2O_3, TiO_2, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and optically tested. • An
Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.
Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

Energy Technology Data Exchange (ETDEWEB)

Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

2015-03-09

Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.
Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

Science.gov (United States)

Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

2012-03-01

We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.
UN2−x layer formed on uranium metal by glow plasma nitriding

International Nuclear Information System (INIS)

Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

2015-01-01

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun; Zhang, Q. Y.; Schwingenschlö gl, Udo

2014-01-01

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we
Post-assembly transformations of porphyrin-containing metal-organic framework (MOF) films fabricated via automated layer-by-layer coordination

KAUST Repository

So, Monica; Beyzavi, M. Hassan; Sawhney, Rohan; Shekhah, Osama; Eddaoudi, Mohamed; Al-Juaid, Salih Salem; Hupp, Joseph T.; Farha, Omar K.

2015-01-01

Herein, we demonstrate the robustness of layer-by-layer (LbL)-assembled, pillared-paddlewheel-type MOF films toward conversion to new or modified MOFs via solvent-assisted linker exchange (SALE) and post-assembly linker metalation. Further, we show that LbL synthesis can afford MOFs that have proven inaccessible through other de novo strategies.
Barrier capability of Zr-N films with titanium addition against copper diffusion

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Yang Xiaodong; Ding Minghui

2009-01-01

Zr-Ti-N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. It is thought that the existing states of Ti and Zr in the films are Ti-N and Zr-N phase in Zr-Ti-N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr-N film is mainly due to the formation of Cu 3 Si precipitates at the Zr-N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr-N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr-Ti-N/Si contact system has high thermal stability at least up to 700 deg. C. The incorporation of Ti atoms into Zr-N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system.
Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

Science.gov (United States)

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.
Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

Science.gov (United States)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Influence of carbon monoxide to the surface layer of uranium metal and its oxides

International Nuclear Information System (INIS)

Wang Xiaoling; Fu Yibei; Xie Renshou; Huang Ruiliang

1996-09-01

The surface structures of uranium metal and triuranium octaoxide (U 3 O 8 ) and the influence of carbon monoxide to the surface layers have been studied by X-ray photoelectron spectroscopy (XPS). After exposure to carbon monoxide, contents of oxygen in the surface oxides of uranium metal and U 3 O 8 are decreased and O/U ratios decrease 7.2%, 8.0% respectively. The investigation indicated the surface layers of uranium metal and its oxides were forbidden to further oxidation in the atmosphere of carbon monoxide. (11 refs., 9 figs., 2 tabs.)
Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

International Nuclear Information System (INIS)

Guo Hui-Qiang; Tang Wei-Yue; Liu Liang; Wei Jian; Li Da-Lai; Feng Jia-Feng; Han Xiu-Feng

2015-01-01

Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions (DBMTJs), where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top MgO barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFeB DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter α mag . With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state (antiferromagnetic coupling between top and middle ferromagnetic layers) to parallel state. In this rotation process α mag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles (θ) to the easy axis of the free layer, the linear dependence persists while the intercept of the linear fit satisfies a cos(θ) dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance. (rapid communication)
Electron emission from a double-layer metal under femtosecond laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

2015-01-01

In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.
TECHNOLOGICAL PECULIARITIES OF THERMAL BARRIER COATINGS BASED ON ZIRCONIUM DIOXIDE

Directory of Open Access Journals (Sweden)

V. V. Okovity

2016-01-01

Full Text Available A technology for formation of thermal barrier coatings (TBC based on zirconium dioxide has been developed in the paper. The paper investigates structures of phase composition and thermal stability of such developed coatings. Investigation results pertaining to formation of an oxide system ZrO2 – Y2O3, while using plasma spraying and subsequent high-energy processing, which allows to increase resistance of a thermal barrier coating to thermal cycling heat resistance of the coating at temperature of 1100 °C. This leads to longer protection of bottom layer against high-temperature exposure. The methodology is based on complex metallographic, X-ray diffraction and electron microscopy investigations of structural elements in composite plasma coatings of the ZrO2 – Y2O system. Resistance of plasma coatings (Мe – Cr – Al – Y/ZrO2 – Y2O3-type, used as TBC to protect gas turbine engine blades under conditions of frequent thermal cyclings is limited by cleavage of an outer ceramic layer. Structural and electron microprobe investigations have shown that as a result of thermal cycling an outer atmosphere due to porous structure of the ceramic coating layer, migrates to the surface of lower metal coating, causing its oxidation. As a result, the metal-ceramic Al2O3 layer is formed at a metal-ceramic interface and it changes a stress state of the coating that causes a reduction of protective properties. Thus, a high heat resistance of thermal barrier coatings depends on processes occurring at the interface between metal and ceramic coating layers. A laser impact on samples with TBC leads to changes in the structure of the oxide layer of ZrO2 – Y2O3. In this case its initial surface characterized by considerable relief is significantly flattened due to processing and the coating is fractured and it is separated in fragments. As the oxide coating has low thermal conductivity, and the time of laser exposure is about 10–3 sec, a heat flux
Spray pyrolysis of doped-ceria barrier layers for solid oxide fuel cells

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Chrzan, Aleksander; Karczewski, Jakub

2017-01-01

Gadolinium doped ceria (Ce0.8Gd0.2O2Â âˆ’Â x-CGO) layer fabricated by spray pyrolysis is investigated as the diffusion barrier for solid oxide fuel cell. It is deposited between the La0.6Sr0.4FeO3Â âˆ’Â Î´ cathode and the yttria stabilized zirconia electrolyte to mitigate harmful interdiffusion...
Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

Energy Technology Data Exchange (ETDEWEB)

Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

2006-07-07

A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S{sub c} equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy.
Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

International Nuclear Information System (INIS)

Hinaje, M; Vinsard, G; Dufour, S

2006-01-01

A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S c equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy
Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Science.gov (United States)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.
Microfabrication process for patterning metallic lithium encapsulated electrodes

International Nuclear Information System (INIS)

Oukassi, Sami; Dunoyer, Nicolas; Salot, Raphael; Martin, Steve

2009-01-01

This work presents recent achievements concerning thin film encapsulation of metallic lithium negative electrode. In the context of this study, the encapsulation stack includes polymer and dielectric layers combined in such way to optimize barrier performances of the whole structure towards oxygen and water vapor permeation. The first part of this work is dedicated to the description of the barrier stack architecture and properties. A second part presents the application of a microfabrication process to the metallic lithium negative electrode and barrier stack so as to have very small features (100 μm x 100 μm patterns). The microfabrication process includes several steps of photolithography and etching (dry and wet) blocks, which allows us to reach the target critical dimensions. These results show a method of patterning functional metallic lithium. It demonstrates the feasibility of energy sources miniaturization which is an important issue in the field of autonomous and wireless sensor networks.
Graphene layer encapsulated metal nanoparticles as a new type of non-precious metal catalysts for oxygen reduction

DEFF Research Database (Denmark)

Hu, Yang; Zhong, Lijie; Jensen, Jens Oluf

2016-01-01

Cheap and efficient non-precious metal catalysts for oxygen reduction have been a focus of research in the field of low-temperature fuel cells. This review is devoted to a brief summary of the recent work on a new type of catalysts, i.e., the graphene layer encapsulated metal nanoparticles....... The discussion is focused on the synthesis, structure, mechanism, performance, and further research....
Experimental study of conjugate heat transfer from liquid metal layer cooled by overlying freon

International Nuclear Information System (INIS)

Cho, J.S.; Suh, K.Y.; Chung, C.H.; Park, R.J.; Kim, S.B.

2001-01-01

Steady-state and transient experiments were performed for the heat transfer from the liquid metal pool with overlying Freon (R113) coolant in the process of boiling. The simulant molten pool material is tin (Sn) with the melting temperature of 232 Celsius degrees. The metal pool is heated from the bottom surface and the coolant is injected onto the molten metal pool. Tests were conducted under the condition of the bottom surface heating in the test section and the forced convection of the R113 coolant being injected onto the molten metal pool. The bottom heating condition was varied from 8 kW to 14 kW. The temperature distributions of the metal layer and coolant were obtained in the steady-state experiment. The boiling mechanism of the R113 coolant was changed from the nucleate boiling to film boiling in the transient experiment. The critical heat flux (CHF) phenomenon was observed during the transition from the nucleate boiling to the film boiling. Also, the Nusselt (Nu) number and the Rayleigh (Ra) number in the molten metal pool region were obtained as functions of time. Analysis was done for the relationship between the heat flux and the temperature difference between the metal layer surface and the boiling coolant. In this experiment, the heat transfer is achieved with accompanying solidification in the molten metal pool by the boiling R113 coolant there above. The present test results of the natural convection heat transfer on the molten metal pool are higher than those of the liquid metal natural convection heat transfer without coolant boiling. It can be interpreted that the heat transfer rate is enhanced by the overlying boiling coolant having the high heat removal rate. Analysis of the relationship between the heat flux and the difference between the metal layer surface temperature and the coolant bulk boiling temperature revealed that the CHF occurs when the temperature difference reaches a neighborhood of 50 Celsius degrees. Also, if the temperature
The attenuation of temperature oscillations in passing through liquid metal boundary layers

International Nuclear Information System (INIS)

Lawn, C.J.

1975-08-01

One aspect of predicting the endurance of components subject to thermal fatigue in liquid metal cooled reactors is the extent to which oscillations in fluid temperature are transmitted to metal surfaces, such as the above-core structure. The first geometry considered is that of a solid plate in contact with a layer of stagnant fluid, in which temperature oscillations are imposed at a given distance from the plate. Transmission through a laminar boundary layer developing over the plate surface is then considered. An approximate calculation based on the slug-flow analysis of Sucec (1975) is developed. (U.K.)
Dynamic partitioning of nanoparticulate metal species between gel layers and aqueous media

NARCIS (Netherlands)

Veeken, van der P.L.R.

2010-01-01

This thesis deals with several aspects of the use of Diffusive Gradient in Thin film (DGT) and Diffusive Equilibriation in Thin film (DET) in dynamic metal speciation analysis. It has a clear focus on the properties of the diffusive gel layer, and their possible impact on metal speciation
Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Energy Technology Data Exchange (ETDEWEB)

Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

2016-07-15

Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.
Organic-inorganic perovskites containing trivalent metal halide layers: the templating influence of the organic cation layer.

Science.gov (United States)

Mitzi, D B

2000-12-25

Thin sheetlike crystals of the metal-deficient perovskites (H2AEQT)M2/3I4 [M = Bi or Sb; AEQT = 5,5"'-bis-(aminoethyl)-2,2':5',2'':5'',2'''-quaterthiophene] were formed from slowly cooled ethylene glycol/2-butanol solutions containing the bismuth(III) or antimony(III) iodide and AEQT.2HI salts. Each structure was refined in a monoclinic (C2/m) subcell, with the lattice parameters a = 39.712(13) A, b = 5.976(2) A, c = 6.043(2) A, beta = 92.238(5) degrees, and Z = 2 for M = Bi and a = 39.439(7) A, b = 5.952(1) A, c = 6.031(1) A, beta = 92.245(3) degrees, and Z = 2 for M = Sb. The trivalent metal cations locally adopt a distorted octahedral coordination, with M-I bond lengths ranging from 3.046(1) to 3.218(3) A (3.114 A average) for M = Bi and 3.012(1) to 3.153(2) A (3.073 A average) for M = Sb. The new organic-inorganic hybrids are the first members of a metal-deficient perovskite family consisting of (Mn+)2/nV(n-2)/nX4(2-) sheets, where V represents a vacancy (generally left out of the formula) and the metal cation valence, n, is greater than 2. The organic layers in the AEQT-based organic-inorganic hybrids feature edge-to-face aromatic interactions among the rigid, rodlike quaterthiophene moieties, which may help to stabilize the unusual metal-deficient layered structures.
Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Khorasani, Arash Elhami [ON Semiconductor Corp., Phoenix, Arizona 85005 (United States); Theodore, N. D. [CHD-Fab, Freescale Semiconductor Inc., Tempe, Arizona 85224 (United States); Dhar, A. [Intel Corp., 2501 NW 229th Ave, Hillsboro, Oregon 97124 (United States)

2015-11-28

Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.
Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

1996-11-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. {copyright} {ital 1996 The American Physical Society.}
Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

International Nuclear Information System (INIS)

Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L.; Barashkov, N.N.; Ferraris, J.P.

1996-01-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM close-quote s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM close-quote s on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. copyright 1996 The American Physical Society
Thermal barrier coatings with a double-layer bond coat on Ni{sub 3}Al based single-crystal superalloy

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Xu, Zhenhua; Mu, Rende [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He, Limin, E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Huang, Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, Xueqiang, E-mail: xcao@ciac.ac.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2014-04-05

Highlights: • Thermal barrier coatings with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi. • Good adherence at all interfaces within TBC system. • The underlying (Ni,Pt)Al layer can supply abundant Al content for the upper NiCrAlYSi layer. • Crack nucleation, propagation and coalescence lead to the failure of coating. -- Abstract: Electron-beam physical vapor deposited thermal barrier coatings (TBCs) with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi were prepared on a Ni{sub 3}Al based single-crystal superalloy. Phase and cross-sectional microstructure of the developed coatings were studied by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The experimental results show good adherence at all interfaces within this system. Furthermore, oxidation resistance and elements interdiffusion behavior of the double-layer bond coat were also investigated. The double-layer bond coat system exhibits a better scale adherence than the single layer bond coat systems since the underlying (Ni,Pt)Al layer can supply abundant Al for the upper NiCrAlYSi layer. Finally, thermal cycling behavior of the double-layer bond coat TBC was evaluated and the failure mechanism was discussed. Crack nucleation, propagation and coalescence caused by TGO growth stress and the thermal expansion mismatch stress between TGO and bond coat can be mainly responsible for the spallation of this coating.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Science.gov (United States)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.
Superconductivity in Layered Organic Metals

Directory of Open Access Journals (Sweden)

Jochen Wosnitza

2012-04-01

Full Text Available In this short review, I will give an overview on the current understanding of the superconductivity in quasi-two-dimensional organic metals. Thereby, I will focus on charge-transfer salts based on bis(ethylenedithiotetrathiafulvalene (BEDT-TTF or ET for short. In these materials, strong electronic correlations are clearly evident, resulting in unique phase diagrams. The layered crystallographic structure leads to highly anisotropic electronic as well as superconducting properties. The corresponding very high orbital critical field for in-plane magnetic-field alignment allows for the occurrence of the Fulde–Ferrell– Larkin–Ovchinnikov state as evidenced by thermodynamic measurements. The experimental picture on the nature of the superconducting state is still controversial with evidence both for unconventional as well as for BCS-like superconductivity.
Multi-layer coatings for bipolar rechargeable batteries with enhanced terminal voltage

Science.gov (United States)

Farmer, Joseph C.; Kaschmitter, James; Pierce, Steve

2017-06-06

A method for producing a multi-layer bipolar coated cell according to one embodiment includes applying a first active cathode material above a substrate to form a first cathode; applying a first solid-phase ionically-conductive electrolyte material above the first cathode to form a first electrode separation layer; applying a first active anode material above the first electrode separation layer to form a first anode; applying an electrically conductive barrier layer above the first anode; applying a second active cathode material above the anode material to form a second cathode; applying a second solid-phase ionically-conductive electrolyte material above the second cathode to form a second electrode separation layer; applying a second active anode material above the second electrode separation layer to form a second anode; and applying a metal material above the second anode to form a metal coating section. In another embodiment, the anode is formed prior to the cathode. Cells are also disclosed.
Charge transfer and injection barrier at the metal-organic interfaces

Science.gov (United States)

Yan, Li

2002-09-01

The metal-organic interface plays a critical role in determining the functionality and performance of many innovative organic based devices. It has attracted extensive research interests in recent years. This thesis presents investigations of the electronic structures of organic materials, such as tris-(8-hydroxyquinoline) aluminum (Alq3) and copper phthalocyanine (CuPc), during their interface formation with metals. The characterization is accomplished by X-ray and ultraviolet photoelectron spectroscopes (XPS and UPS) and inverse photoelectron spectroscopy (IPES). As discussed herein, both occupied and unoccupied electronic states at the interfaces are carefully examined in different aspects. In Chapter 4, the charge transfer and chemical reaction at various metal/Alq3 interfaces are investigated using XPS and UPS to study the electron injection into the Alga film. Electron transfer from the low work function metal and Al/LiF(CsF) bilayer to the Alga has been observed. The role of the dielectric and possible chemistry at the interface are discussed in comparison of the low work function metals. Further in Chapter 5, the origin of the metal-interface dipole and the estimation of charge injection barrier is explored using several organic materials. A thermodynamic equilibrium model is extended to explain the relation between the charge transfer process ad the interface dipole. Further, in Chapter 6 the combination of XPS, UPS and IPES detailed the evolution of both occupied and unoccupied energy states during the alkali metal doping. The energy gap modification in organic due to metal doping is observed directly for the spectra. Chapter 7 provides stability study of the organic thin films under x-ray and UV light. The results verify the usability of UPS and XPS for the organic materials used in the thesis. Chapter 7 also shows the secondary ion mass spectroscopy results of metal diffusion in organic thin films.
FTIR spectroscopy structural analysis of the interaction between Lactobacillus kefir S-layers and metal ions

Science.gov (United States)

Gerbino, E.; Mobili, P.; Tymczyszyn, E.; Fausto, R.; Gómez-Zavaglia, A.

2011-02-01

FTIR spectroscopy was used to structurally characterize the interaction of S-layer proteins extracted from two strains of Lactobacillus kefir (the aggregating CIDCA 8348 and the non-aggregating JCM 5818) with metal ions (Cd +2, Zn +2, Pb +2 and Ni +2). The infrared spectra indicate that the metal/protein interaction occurs mainly through the carboxylate groups of the side chains of Asp and Glut residues, with some contribution of the NH groups belonging to the peptide backbone. The frequency separation between the νCOO - anti-symmetric and symmetric stretching vibrations in the spectra of the S-layers in presence of the metal ions was found to be ca. 190 cm -1 for S-layer CIDCA 8348 and ca. 170 cm -1 for JCM 5818, denoting an unidentate coordination in both cases. Changes in the secondary structures of the S-layers induced by the interaction with the metal ions were also noticed: a general trend to increase the amount of β-sheet structures and to reduce the amount of α-helices was observed. These changes allow the proteins to adjust their structure to the presence of the metal ions at minimum energy expense, and accordingly, these adjustments were found to be more important for the bigger ions.
Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

Science.gov (United States)

Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

2016-07-26

Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.
Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

Science.gov (United States)

Guo, Fuling; He, Jinxiang; Li, Jing; Wu, Wenjun; Hang, Yandi; Hua, Jianli

2013-10-15

In this work, the quantum dot CuInS2 layer was deposited on TiO2 film using successive ionic layer absorption and reaction (SILAR) method, and then two bithiazole-bridged dyes (BTF and BTB) were sensitized on the CuInS2/TiO2 films to form dye/CuInS2/TiO2 photoanodes for DSSCs. It was found that the quantum dots CuInS2 as an energy barrier layer not only could effectively improve open-circuit voltage (Voc) of solar cell, but also increase short-circuit photocurrent (Jsc) compared to the large decrease in Jsc of ZnO as energy barrier layer. The electrochemical impedance spectroscopy (EIS) measurement showed that the CuInS2 formed a barrier layer to suppress the recombination from injection electron to the electrolyte and improve open-circuit voltage. Finally, the open-circuit voltage increased about 22 and 27mV for BTF and BTB-/CuInS2/TiO2-based cells, the overall conversion efficiencies also reached to 7.20% and 6.74%, respectively. Copyright © 2013 Elsevier Inc. All rights reserved.
Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

International Nuclear Information System (INIS)

Sood, D.K.; Muralidhar, G.K.

1998-01-01

This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)
EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier

International Nuclear Information System (INIS)

Rosova, A.; Kovac, P.; Husek, I.; Kopera, L.

2011-01-01

Highlights: → SiC-doped MgB 2 wires with Ti barrier showed good Jc in magnetic field. → Explanation why the Ti barrier fits to SiC-doped MgB 2 filaments. → Ti barrier getters Si from SiC-doped filaments and improve their properties. → Si accumulated in an inner layer of Ti barrier protects filaments from Cu diffusion. → Ion beam treatment helps to discover microstructure of complicated systems. - Abstract: In situ SiC-doped filamentary MgB 2 wires (with the diameter of 0.860 and 0.375 mm) with Cu stabilization separated by Ti barrier layers supported by outer SS sheath and annealed at 800 deg. C/0.5 h have been studied by combination of EDX analysis and ion beam selective etching. It was found that several Ti-Cu inter-metallic compounds were created by Cu-Ti interdiffusion and thus the barrier protection against Cu penetration into the superconducting filaments is limited. We showed an advantage of Ti use as the barrier material in our wires. Ti getters silicon out from the superconducting filament, what purges superconducting MgB 2 from Si and creates an additional Si-rich layer in inner part of Ti barrier which prevents Cu diffusion more effectively.
Functionally gradient materials for thermal barrier coatings in advanced gas turbine systems

Energy Technology Data Exchange (ETDEWEB)

Banovic, S.W.; Barmak, K.; Chan, H.M. [Lehigh Univ., Bethlehem, PA (United States)] [and others

1995-10-01

New designs for advanced gas turbine engines for power production are required to have higher operating temperatures in order to increase efficiency. However, elevated temperatures will increase the magnitude and severity of environmental degradation of critical turbine components (e.g. combustor parts, turbine blades, etc{hor_ellipsis}). To offset this problem, the usage of thermal barrier coatings (TBCs) has become popular by allowing an increase in maximum inlet temperatures for an operating engine. Although thermal barrier technology is over thirty years old, the principle failure mechanism is the spallation of the ceramic coating at or near the ceramic/bond coat interface. Therefore, it is desirable to develop a coating that combines the thermal barrier qualities of the ceramic layer and the corrosion protection by the metallic bond coat without the detrimental effects associated with the localization of the ceramic/metal interface to a single plane.
Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Science.gov (United States)

Li, Xuefei; Grassi, Roberto; Li, Sichao; Li, Tiaoyang; Xiong, Xiong; Low, Tony; Wu, Yanqing

2018-01-10

Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.
Issues involved in the atomic layer deposition of metals

Science.gov (United States)

Grubbs, Robert Kimes

Auger Electron Spectroscopy (AES) was used to study the nucleation and growth of tungsten on aluminum oxide surfaces. Tungsten metal was deposited using Atomic Layer Deposition (ALD) techniques. ALD uses sequential surface reactions to deposit material with atomic layer control. W ALD is performed using sequential exposures of WF6 and Si2H6. The step-wise nature of W ALD allows nucleation studies to be performed by analyzing the W surface concentration after each ALD reaction. Nucleation and growth regions can be identified by quantifying the AES signal intensities from both the W surface and the Al2O3 substrate. W nucleation occurred in 3 ALD reaction cycles. The AES results yielded a nucleation rate of 1.0 A/ALD cycle and a growth rate of ≈3 A/ALD cycle. AES studies also explored the nucleation and growth of Al2O3 on W. Al2O3 nucleated in 1 ALD cycle giving a nucleation rate of 3.5 A/ALD cycle and a subsequent growth rate of 1.0 A/ALD cycle. Mass spectrometry was then used to study the ALD reaction chemistry of tungsten deposition. Because of the step-wise nature of the W ALD chemistry, each W ALD reaction could be studied independently. The gaseous mass products were identified from both the WF6 and Si2H6 reactions. H2, HF and SiF4 mass products were observed for the WF6 reaction. The Si2H6 reaction displayed a room temperature reaction and a 200°C reaction. Products from the room temperature Si2H6 reaction were H2 and SiF3H. The reaction at 200°C yielded only H2 as a reaction product. H2 desorption from the surface contributes to the 200°C Si2H6 reaction. AES was used to confirm that the gas phase reaction products are correlated with a change in the surface species. Atomic hydrogen reduction of metal halides and oganometallic compounds provides another method for depositing metals with atomic layer control. The quantity of atomic hydrogen necessary to perform this chemistry is critical to the metal ALD process. A thermocouple probe was constructed to
Double layer resist process scheme for metal lift-off with application in inductive heating of microstructures

DEFF Research Database (Denmark)

Ouattara, Lassana; Knutzen, Michael; Keller, Stephan Urs

2010-01-01

We present a new method to define metal electrodes on top of high-aspect-ratio microstructures using standard photolithography equipment and a single chromium mask. A lift-off resist (LOR) layer is implemented in an SU-8 photolithography process to selectively remove metal at the end of the proce......We present a new method to define metal electrodes on top of high-aspect-ratio microstructures using standard photolithography equipment and a single chromium mask. A lift-off resist (LOR) layer is implemented in an SU-8 photolithography process to selectively remove metal at the end...
Photoluminescence emission from Alq3 organic layer in metal–Alq3–metal plasmonic structure

Energy Technology Data Exchange (ETDEWEB)

Huang, Bohr-Ran; Liao, Chung-Chi [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Fan, Wan-Ting [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China); Wu, Jin-Han; Chen, Cheng-Chang; Lin, Yi-Ping; Li, Jung-Yu; Chen, Shih-Pu [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), 195, Sec. 4, Chung-Hsin Road, Chutung 310, Taiwan (China); Ke, Wen-Cheng [Department of Mechanical Engineering, Yuan Ze University, Tao-Yuan 320, Taiwan (China); Chen, Nai-Chuan, E-mail: ncchen001@mail.cgu.edu.tw [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China)

2014-06-01

The emission properties of an organic layer embedded in a metal–organic–metal (MOM) structure were investigated. A partially radiative odd-SPW as well as a non-radiative even-SPW modes are supported by hybridization of the SPW modes on the opposite organic/metal interface in the structure. Because of the competition by this radiative SPW, the population of excitons that recombine to form non-radiative SPW should be reduced. This may account for why the photoluminescence intensity of the MOM sample is higher than that of an organic–metal sample even though the MOM sample has an additional metal layer that should intuitively act as a filter.
Comparative study of the synthesis of layered transition metal molybdates

Science.gov (United States)

Mitchell, S.; Gómez-Avilés, A.; Gardner, C.; Jones, W.

2010-01-01

Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs ( T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT2(OH)(MoO 4) 2·H 2O, where A=NH 4+, Na + or K +. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products.
Highly Stable Operation of Lithium Metal Batteries Enabled by the Formation of a Transient High Concentration Electrolyte Layer

Energy Technology Data Exchange (ETDEWEB)

Zheng, Jianming; Yan, Pengfei; Mei, Donghai; Engelhard, Mark H.; Cartmell, Samuel S.; Polzin, Bryant; Wang, Chong M.; Zhang, Jiguang; Xu, Wu

2016-02-08

Lithium (Li) metal has been extensively investigated as an anode for rechargeable battery applications due to its ultrahigh specific capacity and the lowest redox potential. However, significant challenges including dendrite growth and low Coulombic efficiency are still hindering the practical applications of rechargeable Li metal batteries. Here, we demonstrate that long-term cycling of Li metal batteries can be realized by the formation of a transient high concentration electrolyte layer near the surface of Li metal anode during high rate discharge process. The highly concentrated Li+ ions in this transient layer will immediately solvate with the available solvent molecules and facilitate the formation of a stable and flexible SEI layer composed of a poly(ethylene carbonate) framework integrated with other organic/inorganic lithium salts. This SEI layer largely suppresses the corrosion of Li metal anode by free organic solvents and enables the long-term operation of Li metal batteries. The fundamental findings in this work provide a new direction for the development and operation of Li metal batteries that could be operated at high current densities for a wide range of applications.
Ultra-fine structures of Pd-Ag-HAp nanoparticle deposition on protruded TiO2 barrier layer for dental implant

Science.gov (United States)

Jang, Jae-Myung; Kim, Seung-Dai; Park, Tae-Eon; Choe, Han-Cheol

2018-02-01

The biocompatibility structure of an implant surface is of great importance to the formation of new bone tissue around the dental implant and also has a significant chemical reaction in the osseointegration process. Thus, ultra-fine Pd-Ag-HAp nanoparticles have been electrodeposited on protruded TiO2 barrier layer in mixed electrolyte solutions. Unusual protrusions patterns, which are assigned to Pd-Ag-HAp nanoparticles, can be clearly differentiated from a TiO2 nanotube oxide layer formed by an anodizing process. In the chemical bonding state, the surface characteristics of Pd/Ag/HAp compounds have been investigated by FE-SEM, EDS mapping analysis, and XPS analysis. The mapping dots of the elements including Ti, Ca, Pd, Ag, and P showed a homogeneous distribution throughout the entire surface when deposited onto the protruded TiO2 barrier layer. The XPS spectra of Ti-2p, O-1S, Pd-3d, and Ag-3d have been investigated, with the major XPS peak indicating Pd-3d. The Ag-3d level was clearly observed with further scanning of the Ca-2p region. Based on the results of the chemical states, the structural properties of the protrusion patterns were also examined after being deposited onto the barrier oxide film, resulting in the representative protrusion patterns being mainly composed of Pd-Ag-HAp compounds. The results of the soaking evaluation showed that the protrusion patterns and the protruded TiO2 barrier layer were all effective in regards to biocompatibility.
Exchange coupling in metallic multilayers with a top FeRh layer

Energy Technology Data Exchange (ETDEWEB)

Yamada, S., E-mail: yamada@ee.es.osaka-u.ac.jp; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Tanikawa, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Hirayama, J. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Taniyama, T. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2016-05-15

We study magnetic properties of metallic multilayers with FeRh/ferromagnet interfaces grown by low-temperature molecular beam epitaxy. Room-temperature coercivity of the ferromagnetic layers is significantly enhanced after the growth of FeRh, proving the existence of the exchange coupling between the antiferromagnetic FeRh layer and the ferromagnetic layer. However, exchange bias is not clearly observed probably due to the presence of disordered structures, which result from the lattice strain at the FeRh/ferromagnet interfaces due to the lattice mismatch. We infer that the lattice matched interface between FeRh and ferromagnetic layers is a key parameter for controlling magnetic switching fields in such multilayer systems.
Behaviour of ceramic and metallic layers in a H2O-H2S

International Nuclear Information System (INIS)

Furtuna, I.; Mihailescu, M.; Deaconu, M.; Dinu, A.; Cotolan, V; Nedelcu, L.; Titescu, Gh.

1996-01-01

In the installations for heavy water production there exist zones where the action of aggressive working conditions combined with a severe variable hydrodynamical regime lead to the destruction of the pyrite protecting layer. An alternating solution for the protection of these zones is to cover them with ceramic or metallic layers. This work presents the results of the preliminary tests on G28-52 steel samples, covered with ceramic and metallic layers, in the working environment (H 2 O-H 2 S) of the heavy water production installations and in severe hydrodynamical conditions. On the basis of the results obtained in the experiments and from the examination of the microstructure of the layers prior and after testing, a phenomenological model was developed to explain the behaviour of the deposed layers. On the basis of this model the conditions that the layers must satisfy have been deduced to improve their behaviour in the working environment
Theoretical bases on thermal stability of layered metallic systems

International Nuclear Information System (INIS)

Kadyrzhanov, K.K.; Rusakov, V.S.; Turkebaev, T.Eh.; Zhankadamova, A.M.; Ensebaeva, M.Z.

2003-01-01

The paper is dedicated to implementation of the theoretical bases for layered metallic systems thermal stabilization. The theory is based on the stabilization mechanism expense of the intermediate two-phase field formation. As parameters of calculated model are coefficients of mutual diffusion and inclusions sizes of generated phases in two-phase fields. The stabilization time dependence for beryllium-iron (Be (1.1 μm)-Fe(5.5 μm)) layered system from iron and beryllium diffusion coefficients, and inclusions sizes is shown as an example. Conclusion about possible mechanisms change at transition from microscopic consideration to the nano-crystal physics level is given

Adsorption of metal adatoms on single-layer phosphorene.

Science.gov (United States)

Kulish, Vadym V; Malyi, Oleksandr I; Persson, Clas; Wu, Ping

2015-01-14

Single- or few-layer phosphorene is a novel two-dimensional direct-bandgap nanomaterial. Based on first-principles calculations, we present a systematic study on the binding energy, geometry, magnetic moment and electronic structure of 20 different adatoms adsorbed on phosphorene. The adatoms cover a wide range of valences, including s and p valence metals, 3d transition metals, noble metals, semiconductors, hydrogen and oxygen. We find that adsorbed adatoms produce a rich diversity of structural, electronic and magnetic properties. Our work demonstrates that phosphorene forms strong bonds with all studied adatoms while still preserving its structural integrity. The adsorption energies of adatoms on phosphorene are more than twice higher than on graphene, while the largest distortions of phosphorene are only ∼0.1-0.2 Å. The charge carrier type in phosphorene can be widely tuned by adatom adsorption. The unique combination of high reactivity with good structural stability is very promising for potential applications of phosphorene.
UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

2015-01-25

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.
Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

International Nuclear Information System (INIS)

Jung, Y; Cheng, X

2014-01-01

High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor. (paper)
Micro-EDXRF surface analyses of a bronze spear head: Lead content in metal and corrosion layers

International Nuclear Information System (INIS)

Figueiredo, E.; Valerio, P.; Araujo, M.F.; Senna-Martinez, J.C.

2007-01-01

A bronze spear head from Central Portugal dated to Late Bronze Age has been analyzed by non-destructive micro-EDXRF in the metal surface and corrosion layers. The artifact had previously been analyzed using a conventional EDXRF spectrometer having a larger incident beam. The quantification of the micro-EDXRF analyses showed that lead content in corrosion layers can reach values up to four times higher than the content determined in the metal surface. Results obtained with the higher energy incident beam from the EDXRF equipment, although referring mainly to the corrosion layers, seem to suffer some influence from the surface composition of the metallic alloy
The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Science.gov (United States)

Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

2018-05-01

In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.
Effects of a Chitosan Coating Layer on the Surface Properties and Barrier Properties of Kraft Paper

Directory of Open Access Journals (Sweden)

Shanhui Wang

2016-01-01

Full Text Available Biodegradable chitosan can be applied as a coating on the surface of kraft paper in order to improve its barrier properties against water vapor and air. The food packaging industry can benefit from the addition of chitosan to its current packaging, and in turn reduce pollution from plastic packaging plants. This paper discusses the film formation of chitosan, the permeability of paper coated with a chitosan layer, and the influence on the paper’s surface and barrier properties under different process conditions. SEM (scanning electron microscope, AFM (atomic force microscope, ATR-FTIR (Fourier transmission infrared spectroscope with attenuated total reflection, and PDA (penetration dynamics analysis were used to analyze the properties of chitosan’s film formation and permeability. A controlled experiment showed that the chitosan layer was smoother than the surface of the uncoated kraft paper, had better film formation, and that there was no chitosan penetration through the kraft paper. The barrier properties against water vapor were strongest when there was a higher concentration of chitosan solution at the optimum pH, stirring speed, and those with a thicker coating on the kraft paper.
Reduction of methanol crossover by thin cracked metal barriers at the interface between membrane and electrode in direct methanol fuel cells

Science.gov (United States)

Kim, Sungjun; Jang, Segeun; Kim, Sang Moon; Ahn, Chi-Yeong; Hwang, Wonchan; Cho, Yong-Hun; Sung, Yung-Eun; Choi, Mansoo

2017-09-01

This work reports the successful reduction in methanol crossover by creating a thin cracked metal barrier at the interface between a Nafion® membrane and an electrode in direct methanol fuel cells (DMFCs). The cracks are generated by simple mechanical stretching of a metal deposited Nafion® membrane as a result of the elastic mismatch between the two attached surfaces. The cracked metal barriers with varying strains (∼0.5 and ∼1.0) are investigated and successfully incorporated into the DMFC. Remarkably, the membrane electrode assembly with the thin metal crack exhibits comparable ohmic resistance as well as reduction of methanol crossover, which enhanced the device performance.
Design technology co-optimization for 14/10nm metal1 double patterning layer

Science.gov (United States)

Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

2016-03-01

Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.
Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.

Science.gov (United States)

Shtepliuk, Ivan; Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

2016-01-01

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium-graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I - V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.
Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Directory of Open Access Journals (Sweden)

Ivan Shtepliuk

2016-11-01

Full Text Available A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.
Neutron scattering investigation of layer-bending modes in alkali-metal--graphite intercalation compounds

International Nuclear Information System (INIS)

Zabel, H.; Kamitakahara, W.A.; Nicklow, R.M.

1982-01-01

Phonon dispersion curves for low-frequency transverse modes propagating in the basal plane have been measured in the alkali-metal--graphite intercalation compounds KC 8 , CsC 8 , KC 24 , and RbC 24 by means of neutron spectroscopy. The acoustic branches show an almost quadratic dispersion relation at small q, characteristic of strongly layered materials. The optical branches of stage-1 compounds can be classified as either graphitelike branches showing dispersion, or as almost dispersionless alkali-metal-like modes. Macroscopic shear constants C 44 and layer-bending moduli have been obtained for the intercalation compounds by analyzing the data in terms of a simple semicontinuum model. In stage-2 compounds, a dramatic softening of the shear constant by about a factor of 8 compared with pure graphite has been observed. Low-temperature results on KC 24 indicate the opening of a frequency gap near the alkali-metal Brillouin-zone boundary, possibly due to the formation of the alkali-metal superstructure
Thin-layer chromatography of ternary complexes of group-IIIA metals with 2-thenoyltrifluoroacetone and 2,2'-bipyridyl on cellulose layer

Energy Technology Data Exchange (ETDEWEB)

Chao, H E; Saitoh, K; Suzuki, N [Tohoku Univ., Sendai (Japan). Faculty of Science

1980-11-11

Normal phase thin-layer chromatographic behaviour of several ternary complexes of group-IIIA metals with 2-thenoyltrifluoroacetone (TTA) and 2,2'bipyridyl (bpy) has been investigated on cellulose layer. The ternary complexes of lanthanide metals show higher mutual separability than the complexes with TTA alone. Mutual separation of TTA complexes with La(III), Ce(III), Eu(III) or Y(III), Sc(III), Th(IV), and U(VI) has been successfully achieved by two-dimensional TLC, primarily with carbon tetrachloride-benzene (75:25) containing 0.02M TTA, and secondary with carbon tetrachloride-hexane (35:65) containing both 0.02M TTA and 0.02M bpy.
Plasma sprayed and electrospark deposited zirconium metal diffusion barrier coatings

International Nuclear Information System (INIS)

Hollis, Kendall J.; Pena, Maria I.

2010-01-01

Zirconium metal coatings applied by plasma spraying and electrospark deposition (ESD) have been investigated for use as diffusion barrier coatings on low enrichment uranium fuel for research nuclear reactors. The coatings have been applied to both stainless steel as a surrogate and to simulated nuclear fuel uranium-molybdenum alloy substrates. Deposition parameter development accompanied by coating characterization has been performed. The structure of the plasma sprayed coating was shown to vary with transferred arc current during deposition. The structure of ESD coatings was shown to vary with the capacitance of the deposition equipment.
Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, F.N. [Institute of Wide Band Gap Semiconductors, Xi' an Jiaotong University, Xi' an 710049 (China); Nation Key Laboratory of ASIC, HSRI, Shijiazhuang 050051 (China); Liu, J.W. [International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 3050044 (Japan); Zhang, J.W.; Wang, X.L.; Wang, W.; Liu, Z.C. [Institute of Wide Band Gap Semiconductors, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, H.X., E-mail: hxwangcn@mail.xjtu.edu.cn [Institute of Wide Band Gap Semiconductors, Xi' an Jiaotong University, Xi' an 710049 (China)

2016-05-01

Highlights: • Metal-semiconductor contacts of Pd/hydrogen-terminated diamond and Pd/oxygen-terminated diamond have been investigated by XPS measurements. • The barrier height for Pd/hydrogen-terminated diamond (ohmic contact) has been measured to be −0.27 eV. • The barrier height for Pd/oxygen-terminated diamond (Schottky contact) has been measured to be 1.73 eV. - Abstract: Barrier height (Φ{sub BH}) values for Pd/hydrogen-terminated diamond (H-diamond) and Pd/oxygen-terminated diamond (O-diamond) have been investigated by X-ray photoelectron spectroscopy technique. H-diamond and O-diamond have been formed on the same diamond (100) layer grown by microwave plasma-enhanced chemical vapor deposition,on which Pd layers have been evaporated. The Φ{sub BH} values for Pd/H-diamond and Pd/O-diamond are determined to be −0.27 eV and 1.73 eV, respectively. It indicates that Pd is a suitable metal for ohmic and Schottky contacts on H-diamond and O-diamond, respectively. The experimental Φ{sub BH} values are in good agreement with the theoretical calculation results.
Interfacial Layer Engineering for Performance Enhancement in Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Hao Zeng

2015-02-01

Full Text Available Improving power conversion efficiency and device performance stability is the most critical challenge in polymer solar cells for fulfilling their applications in industry at large scale. Various methodologies have been developed for realizing this goal, among them interfacial layer engineering has shown great success, which can optimize the electrical contacts between active layers and electrodes and lead to enhanced charge transport and collection. Interfacial layers also show profound impacts on light absorption and optical distribution of solar irradiation in the active layer and film morphology of the subsequently deposited active layer due to the accompanied surface energy change. Interfacial layer engineering enables the use of high work function metal electrodes without sacrificing device performance, which in combination with the favored kinetic barriers against water and oxygen penetration leads to polymer solar cells with enhanced performance stability. This review provides an overview of the recent progress of different types of interfacial layer materials, including polymers, small molecules, graphene oxides, fullerene derivatives, and metal oxides. Device performance enhancement of the resulting solar cells will be elucidated and the function and operation mechanism of the interfacial layers will be discussed.
In situ ceramic layer growth on coated fuel particles dispersed in a zirconium metal matrix

Science.gov (United States)

Terrani, K. A.; Silva, C. M.; Kiggans, J. O.; Cai, Z.; Shin, D.; Snead, L. L.

2013-06-01

The extent and nature of the chemical interaction between the outermost coating layer of coated fuel particles embedded in zirconium metal during fabrication of metal matrix microencapsulated fuels were examined. Various particles with outermost coating layers of pyrocarbon, SiC, and ZrC have been investigated in this study. ZrC-Zr interaction was the least substantial, while the PyC-Zr reaction can be exploited to produce a ZrC layer at the interface in an in situ manner. The thickness of the ZrC layer in the latter case can be controlled by adjusting the time and temperature during processing. The kinetics of ZrC layer growth is significantly faster from what is predicted using literature carbon diffusivity data in ZrC. SiC-Zr interaction is more complex and results in formation of various chemical phases in a layered aggregate morphology at the interface.
Changes of electrical conductivity of the metal surface layer by the laser alloying with foreign elements

Science.gov (United States)

Kostrubiec, Franciszek; Pawlak, Ryszard; Raczynski, Tomasz; Walczak, Maria

1994-09-01

Laser treatment of the surface of materials is of major importance for many fields technology. One of the latest and most significant methods of this treatment is laser alloying consisting of introducing foreign atoms into the metal surface layer during the reaction of laser radiation with the surface. This opens up vast possibilities for the modification of properties of such a layer (obtaining layers of increased microhardness, increased resistance to electroerosion in an electric arc, etc.). Conductivity of the material is a very important parameter in case of conductive materials used for electrical contacts. The paper presents the results of studies on change in electrical conductivity of the surface layer of metals alloyed with a laser. A comparative analysis of conductivity of base metal surface layers prior to and following laser treatment has been performed. Depending on the base metal and the alloying element, optical treatment parameters allowing a required change in the surface layer conductivity have been selected. A very important property of the contact material is its resistance to plastic strain. It affects the real value of contact surface coming into contact and, along with the material conductivity, determines contact resistance and the amount of heat generated in place of contact. These quantities are directly related to the initiation and the course of an arc discharge, hence they also affect resistance to electroerosion. The parameter that reflects plastic properties with loads concentrated on a small surface, as is the case with a reciprocal contact force of two real surfaces with their irregularities being in contact, is microhardness. In the paper, the results of investigations into microhardness of modified surface layers compared with base metal microhardness have been presented.
The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

DEFF Research Database (Denmark)

Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

2015-01-01

Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...
Nucleation and Early Stages of Layer-by-Layer Growth of Metal Organic Frameworks on Surfaces

Science.gov (United States)

2015-01-01

High resolution atomic force microscopy (AFM) is used to resolve the evolution of crystallites of a metal organic framework (HKUST-1) grown on Au(111) using a liquid-phase layer-by-layer methodology. The nucleation and faceting of individual crystallites is followed by repeatedly imaging the same submicron region after each cycle of growth and we find that the growing surface is terminated by {111} facets leading to the formation of pyramidal nanostructures for [100] oriented crystallites, and triangular [111] islands with typical lateral dimensions of tens of nanometres. AFM images reveal that crystallites can grow by 5–10 layers in each cycle. The growth rate depends on crystallographic orientation and the morphology of the gold substrate, and we demonstrate that under these conditions the growth is nanocrystalline with a morphology determined by the minimum energy surface. PMID:26709359
Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

International Nuclear Information System (INIS)

Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

2015-01-01

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe 2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10 13 /cm 2 /eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices

Salinity-induced mixed and barrier layers in the southwestern tropical Atlantic Ocean off the northeast of Brazil

Directory of Open Access Journals (Sweden)

M. Araujo

2011-01-01

Full Text Available High-resolution hydrographic observations of temperature and salinity are used to analyze the formation and distribution of isothermal depth (Z_T, mixed depth (Z_M and barrier layer thickness (BLT in a section of the southwestern Atlantic (0°30´ N–14°00´ S; 31°24´–41°48´ W, adjacent to the northeastern Brazilian coast. Analyzed data consists of 279 CTD casts acquired during two cruises under the Brazilian REVIZEE Program. One occurred in late austral winter (August–October 1995 and another in austral summer (January–April 1997. Oceanic observations are compared to numerical modeling results obtained from the French Mercator-Coriolis Program. Results indicate that the intrusion of subtropical Salinity Maximum Waters (SMW is the major process contributing to the seasonal barrier layer formation. These waters are brought by the South Equatorial Current (SEC, from the subtropical region, into the western tropical Atlantic boundary. During late austral winter southeastern trade winds are more intense and ITCZ precipitations induce lower surface salinity values near the equator. During this period a 5–90 m thick BLT (median = 15 m is observed and BLT > 30 m is restricted to latitudes higher than 8° S, where the intrusion of salty waters between 8°–12.3° S creates shallow mixed layers over deep (Z_T ≥ 90 m isothermal layers. During austral summer, shallow isothermal and mixed layers prevail, when northeasterly winds are predominant and evaporation overcomes precipitation, causing saltier waters at the surface/subsurface layers. During that period observed BLT varies from 5 to 70 m and presents thicker median value of 35 m, when comparing to the winter. Furthermore, BLT ≥ 30 m is observed not only in the southernmost part of the study area, as verified during late winter, but in the latitude range 2°–14° S, where near-surface salty waters are transported westward by the
Study on the influence of carbon monoxide to the surface oxide layer of uranium metal

International Nuclear Information System (INIS)

Wang Xiaolin; Duan Rongliang; Fu Yibei; Xie Renshou; Zuo Changming; Zhao Chunpei; Chen Hong

1997-01-01

The influence of carbon monoxide to the surface oxide layer of uranium metal has been studied by X-ray photoelectron spectroscopy (XPS) and gas chromatography (GC). Carbon monoxide adsorption on the oxide layer resulted in U4f peak shifting to the lower binding energy. The content of oxygen in the oxide is decreased and the atomic ratio (O/U) is decreased by 7.2%. The amount of carbon dioxide in the atmosphere after the surface reaction is increased by 11.0%. The investigation indicates that the surface layer can prevent the further oxidation uranium metal in the atmosphere of carbon monoxide
Functional Two-Dimensional Coordination Polymeric Layer as a Charge Barrier in Li–S Batteries

KAUST Repository

Huang, Jing-Kai

2018-01-04

Ultrathin two-dimensional (2D) polymeric layers are capable of separating gases and molecules based on the reported size exclusion mechanism. What is equally important but missing today is an exploration of the 2D layers with charge functionality, which enables applications using the charge exclusion principle. This work demonstrates a simple and scalable method of synthesizing a free-standing 2D coordination polymer Zn2(benzimidazolate)2(OH)2 at the air–water interface. The hydroxyl (−OH) groups are stoichiometrically coordinated and implement electrostatic charges in the 2D structures, providing powerful functionality as a charge barrier. Electrochemical performance of the Li–S battery shows that the Zn2(benzimidazolate)2(OH)2 coordination polymer layers efficiently mitigate the polysulfide shuttling effects and largely enhance the battery capacity and cycle performance. The synthesis of the proposed coordination polymeric layers is simple, scalable, cost saving, and promising for practical use in batteries.
Roll-to-roll vacuum deposition of barrier coatings

CERN Document Server

Bishop, Charles A

2015-01-01

It is intended that the book will be a practical guide to provide any reader with the basic information to help them understand what is necessary in order to produce a good barrier coated web or to improve the quality of any existing barrier product. After providing an introduction, where the terminology is outlined and some of the science is given (keeping the mathematics to a minimum), including barrier testing methods, the vacuum deposition process will be described. In theory a thin layer of metal or glass-like material should be enough to convert any polymer film into a perfect barrier material. The reality is that all barrier coatings have their performance limited by the defects in the coating. This book looks at the whole process from the source materials through to the post deposition handling of the coated material. This holistic view of the vacuum coating process provides a description of the common sources of defects and includes the possible methods of limiting the defects. This enables readers...
Tritium/hydrogen barrier development

International Nuclear Information System (INIS)

Hollenberg, G.W.; Simonen, E.P.; Kalinen, G.; Terlain, A.

1994-06-01

A review of hydrogen permeation barriers that can be applied to structural metals used in fusion power plants is presented. Both implanted and chemically available hydrogen isotopes must be controlled in fusion plants. The need for permeation barriers appears strongest in Li17-Pb blanket designs, although barriers also appear necessary for other blanket and coolant systems. Barriers that provide greater than a 1000 fold reduction in the permeation of structural metals are desired. In laboratory experiments, aluminide and titanium ceramic coatings provide permeation reduction factors, PRFS, from 1000 to over 100,000 with a wide range of scatter. The rate-controlling mechanism for hydrogen permeation through these barriers may be related to the number and type of defects in the barriers. Although these barriers appear robust and resistant to liquid metal corrosion, irradiation tests which simulate blanket environments result in very low PRFs in comparison to laboratory experiments, i.e., <150. It is anticipated from fundamental research activities that the REID enhancement of hydrogen diffusion in oxides may contribute to the lower permeation reduction factors during in-reactor experiments
Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

Science.gov (United States)

Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

2017-02-01

Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.
Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

Science.gov (United States)

Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

2017-02-06

Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.
Melt layer macroscopic erosion of tungsten and other metals under plasma heat loads simulating ITER off-normal events

International Nuclear Information System (INIS)

Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Kulik, N.V.; Landman, I.; Wuerz, H.

2002-01-01

This paper is focused on experimental analysis of metal layer erosion and droplet splashing of tungsten and other metals under heat loads typical for ITER FEAT off-normal events,such as disruptions and VDE's. Plasma pressure gradient action on melt layer results in erosion crater formation with mountains of displaced material at the crater edge. It is shown that macroscopic motion of melt layer and surface cracking are the main factors responsible for tungsten damage. Weight loss measurements of all exposed materials demonstrate inessential contribution of evaporation process to metals erosion
Formation of nanocrystalline surface layers in various metallic materials by near surface severe plastic deformation

Directory of Open Access Journals (Sweden)

Masahide Sato, Nobuhiro Tsuji, Yoritoshi Minamino and Yuichiro Koizumi

2004-01-01

Full Text Available The surface of the various kinds of metallic materials sheets were severely deformed by wire-brushing at ambient temperature to achieve nanocrystalline surface layer. The surface layers of the metallic materials developed by the near surface severe plastic deformation (NS-SPD were characterized by means of TEM. Nearly equiaxed nanocrystals with grain sizes ranging from 30 to 200 nm were observed in the near surface regions of all the severely scratched metallic materials, which are Ti-added ultra-low carbon interstitial free steel, austenitic stainless steel (SUS304, 99.99 wt.%Al, commercial purity aluminum (A1050 and A1100, Al–Mg alloy (A5083, Al-4 wt.%Cu alloy, OFHC-Cu (C1020, Cu–Zn alloy (C2600 and Pb-1.5%Sn alloy. In case of the 1050-H24 aluminum, the depth of the surface nanocrystalline layer was about 15 μm. It was clarified that wire-brushing is an effective way of NS-SPD, and surface nanocrystallization can be easily achieved in most of metallic materials.
Metal Surface Modification for Obtaining Nano- and Sub-Nanostructured Protective Layers

OpenAIRE

Ledovskykh, Volodymyr; Vyshnevska, Yuliya; Brazhnyk, Igor; Levchenko, Sergiy

2017-01-01

Regularities of the phase protective layer formation in multicomponent systems involving inhibitors with different mechanism of protective action have been investigated. It was shown that optimization of the composition of the inhibition mixture allows to obtain higher protective efficiency owing to improved microstructure of the phase layer. It was found that mechanism of the film formation in the presence of NaNO2-PHMG is due to deposition of slightly soluble PHMG-Fe complexes on the metal ...
Design, installation, and performance of a multi-layered permeable reactive barrier, Los Alamos National Laboratory

International Nuclear Information System (INIS)

Kaszuba, John P.; Longmire, Patrick A.; Strietelmeier, Elizabeth A.; Taylor, Tammy P.; Den-Baars, Peter S.

2004-01-01

A multi-layered permeable reactive barrier (PRB) has been installed in Mortandad Canyon, on the Pajarito Plateau in the north-central part of LANL, to demonstrate in-situ treatment of a suite of contaminants with dissimilar geochemical properties. The PRB will also mitigate possible vulnerabilities from downgradient contaminant movement within alluvial and deeper perched groundwater. Mortandad Canyon was selected as the location for this demonstration project because the flow of alluvial groundwater is constrained by the geology of the canyon, a large network of monitoring wells already were installed along the canyon reach, and the hydrochemistry and contaminant history of the canyon is well-documented. The PRB uses a funnel-and-gate system with a series of four reactive media cells to immobilize or destroy contaminants present in alluvial groundwater, including strontium-90, plutonium-238,239,240, americium-241, perchlorate, and nitrate. The four cells, ordered by sequence of contact with the groundwater, consist of gravel-sized scoria (for colloid removal); phosphate rock containing apatite (for metals and radionuclides); pecan shells and cotton seed admixed with gravel (bio-barrier, to deplete dissolved oxygen and destroy potential RCRA organic compounds, nitrate and perchlorate); and limestone (pH buffering and anion adsorption). Design elements of the PRB are based on laboratory-scale treatability studies and on a field investigation of hydrologic, geochemical, and geotechnical parameters. The PRB was designed with the following criteria: 1-day residence time within the biobarrier, 10-year lifetime, minimization of surface water infiltration and erosion, optimization of hydraulic capture, and minimization of excavated material requiring disposal. Each layer has been equipped with monitoring wells or ports to allow sampling of groundwater and reactive media, and monitor wells are located immediately adjacent to the up- and down-gradient perimeter of the
General access to metal oxide (Metal = Mn, Co, Ni) double-layer nanospheres for application in lithium ion batteries and supercapacitors

International Nuclear Information System (INIS)

Xia, Yuan; Wang, Gang; Zhang, Xing; Wang, Beibei; Wang, Hui

2016-01-01

Highlights: • A series of metal oxide double layer nanospheres were prepared. • The obtained materials show excellent performances in lithium ion batteries and supercapacitors. • The unique structure of double layers is beneficial for superior electrochemical performances. - Abstract: In this work, a series of metal oxide double-layer nanospheres (DLNs), such as Mn 2 O 3 , Co 3 O 4 , NiO, NiCo 2 O 4 , and MnCo 2 O 4 have been successfully synthesized through a general template method. The layers of nanospheres were assembled by different nanostructure units and the removing of the SiO 2 template formed a void of several ten nanometers between the double layers, resulting large specific surface areas for them. The energy storage performances of the as-prepared double-layer nanospheres were further investigated in lithium ion battery and supercapacitor systems. Based on their unique nanostructures, the double-layer nanospheres exhibit excellent electrochemical performance with long cycle stability and high specific capacities or capacitances. The best of these, DLNs-NiCo 2 O 4 can deliver a reversible capacity of 1107 mAh g −1 at 0.25C after 200 cycles in lithium ion battery system, and shows a capacitance of 1088 F g −1 with capacitance loss of less than 3% at 5 A g −1 after 5000 cycles in supercapacitors.
UV and plasma treatment of thin silver layers and glass surfaces

Energy Technology Data Exchange (ETDEWEB)

Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

2006-11-10

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.
UV and plasma treatment of thin silver layers and glass surfaces

International Nuclear Information System (INIS)

Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

2006-01-01

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers
Layer-by-Layer Method for the Synthesis and Growth of Surface Mounted Metal-Organic Frameworks (SURMOFs

Directory of Open Access Journals (Sweden)

Osama Shekhah

2010-02-01

Full Text Available A layer-by-layer method has been developed for the synthesis of metal-organic frameworks (MOFs and their deposition on functionalized organic surfaces. The approach is based on the sequential immersion of functionalized organic surfaces into solutions of the building blocks of the MOF, i.e., the organic ligand and the inorganic unit. The synthesis and growth of different types of MOFs on substrates with different functionalization, like COOH, OH and pyridine terminated surfaces, were studied and characterized with different surface characterization techniques. A controlled and highly oriented growth of very homogenous films was obtained using this method. The layer-by-layer method offered also the possibility to study the kinetics of film formation in more detail using surface plasmon resonance and quartz crystal microbalance. In addition, this method demonstrates the potential to synthesize new classes of MOFs not accessible by conventional methods. Finally, the controlled growth of MOF thin films is important for many applications like chemical sensors, membranes and related electrodes.
Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Energy Technology Data Exchange (ETDEWEB)

Vasilopoulou, M., E-mail: mariva@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Stathopoulos, N.A.; Savaidis, S.A. [Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Kostis, I. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Papadimitropoulos, G. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Davazoglou, D., E-mail: d.davazoglou@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece)

2015-09-30

Graphical abstract: In this work we perform successful engineering of the anode of organic photovoltaics based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester blends by using metal oxide transport layers exhibiting shallow gap states which act as a barrier-free path for hole transport toward the anode. - Highlights: • Interface engineering of the anode. • Organic photovoltaics (OPVs). • Shallow gap states. • Barrier-free hole transport. • Design rules for interface engineering in OPVs. - Abstract: In this work we use hydrogen deposited molybdenum and tungsten oxides (chemically described as H:MO{sub x}x ≤ 3 where M = Mo or W) to control the energetics at the anode of bulk heterojunction (BHJ) organic photovoltaics (OPVs) based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester (P3HT:PC{sub 71}BM) blends. Significantly improved current densities and open circuit voltages were achieved as a result of improved hole transport from the P3HT highest occupied molecular orbital (HOMO) toward indium tin oxide (ITO) anode. This was attributed to the formation of shallow gap states in these oxides which are located just below the Fermi level and above the polymer HOMO and thus may act as a barrier-free path for the extraction of holes. Consequently, these states can be used for controlling the energetic structure of the anode of OPVs. By using ultraviolet photoelectron spectroscopy it was found that dependent on the deposition conditions these gap states and work function of the metal oxides may be tailored to contribute to the precise alignment of the HOMO of the organic semiconductor (OSC) with the Fermi level of the anode electrode resulting in further enhancement of the device performance.
Microstructure of edge-type Josephson junctions with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer

Energy Technology Data Exchange (ETDEWEB)

Lebedev, O I; Vasiliev, A L; Kiselev, N A [Inst. of Crystallography, Russian Academy of Sciences, Moscow (Russia); Mazo, L A; Gaponov, S V; Paveliev, D G; Strikovsky, M D [Inst. of Applied Physics, Russian Academy of Sciences, Novgorod (Russia)

1992-08-01

HREM investigations of edge Josephson junctions (EJJ) with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer (PB) were performed. All layers (superconducting YBa[sub 2]Cu[sub 3]O[sub 7-x]) (Y1) and (Y2), insulating PrBa[sub 2]Cu[sub 3]O[sub 7-x] (PI) and barrier (PB) were obtained by laser ablation. The edges were formed by ion sputtering using a fotoresist mask. EJJ shows Josephson conductivity at Tc=77 K, giving j[sub c]=10[sup 4] A/cm[sup 2] at U[sub c]=50 [mu]V. Cross-sectional images show that Y1, PI and PB layers are single crystalline with the c-axis normal to the substrate surface. The Y2 layer in the regions of a multilayered structure is polycrystalline. The PB/Y1 interface is characterised by APB line boundaries; it is inclined to the substrate by 20-35deg. (orig.).
Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

NARCIS (Netherlands)

Hajlasz, Marcin; Donkers, Johan J.T.M.; Pandey, Saurabh; Hurkx, Fred; Hueting, Raymond J.E.; Gravesteijn, Dirk J.

2017-01-01

In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress
First-principles simulations of Graphene/Transition-metal-Dichalcogenides/Graphene Field-Effect Transistor

Science.gov (United States)

Li, Xiangguo; Wang, Yun-Peng; Zhang, X.-G.; Cheng, Hai-Ping

A prototype field-effect transistor (FET) with fascinating properties can be made by assembling graphene and two-dimensional insulating crystals into three-dimensional stacks with atomic layer precision. Transition metal dichalcogenides (TMDCs) such as WS2, MoS2 are good candidates for the atomically thin barrier between two layers of graphene in the vertical FET due to their sizable bandgaps. We investigate the electronic properties of the Graphene/TMDCs/Graphene sandwich structure using first-principles method. We find that the effective tunnel barrier height of the TMDC layers in contact with the graphene electrodes has a layer dependence and can be modulated by a gate voltage. Consequently a very high ON/OFF ratio can be achieved with appropriate number of TMDC layers and a suitable range of the gate voltage. The spin-orbit coupling in TMDC layers is also layer dependent but unaffected by the gate voltage. These properties can be important in future nanoelectronic device designs. DOE/BES-DE-FG02-02ER45995; NERSC.
Spectra of magnetoplasma polaritons in a semiconductor layer on a metallic substrate

International Nuclear Information System (INIS)

Beletsekii, N.N.; Gasan, E.A.; Yakovenko, V.M.

1988-01-01

The dispersion properties of volume and surface magnetoplasma polaritons in a three-layer metal-semiconductor-insulator structure are studied. It is predicted that surface magnetoplasma polaritons propagating on the two boundaries of the semiconductor layer interact resonantly. It is shown that for a certain direction of propagation the dispersion curves of surface and volume magnetoplasma polaritons contain sections with negative dispersion. Nonreciprocal propagation of volume magnetoplasma polaritons has been observed. Losses in the semiconductor layer split the starting spectral lines into dispersion curves of two types, corresponding to forward and backward waves

GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

2016-07-11

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.
Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

Science.gov (United States)

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
Barrier properties of plastic films coated with an Al{sub 2}O{sub 3} layer by roll-to-toll atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Hirvikorpi, Terhi, E-mail: Terhi.Hirvikorpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Laine, Risto, E-mail: Risto.Laine@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vähä-Nissi, Mika, E-mail: Mika.Vaha-Nissi@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kilpi, Väinö, E-mail: Vaino.Kilpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Salo, Erkki, E-mail: Erkki.Salo@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Li, Wei-Min, E-mail: Wei-Min.Li@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Lindfors, Sven, E-mail: Sven.Lindfors@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vartiainen, Jari, E-mail: Jari.Vartiainen@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kenttä, Eija, E-mail: Eija.Kentta@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Nikkola, Juha, E-mail: Juha.Nikkola@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1300, FI-33101 Tampere (Finland); Harlin, Ali, E-mail: Ali.Harlin@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kostamo, Juhana, E-mail: Juhana.Kostamo@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland)

2014-01-01

Thin (30–40 nm) and highly uniform Al{sub 2}O{sub 3} coatings have been deposited at relatively low temperature of 100 °C onto various polymeric materials employing the atomic layer deposition (ALD) technique, both batch and roll-to-roll (R2R) mode. The applications for ALD have long been limited those feasible for batch processing. The work demonstrates that R2R ALD can deposit thin films with properties that are comparable to the film properties fabricated by in batch. This accelerates considerably the commercialization of many products, such as flexible, printed electronics, organic light-emitting diode lighting, third generation thin film photovoltaic devices, high energy density thin film batteries, smart textiles, organic sensors, organic/recyclable packaging materials, and flexible displays, to name a few. - Highlights: • Thin and uniform Al{sub 2}O{sub 3} coatings have been deposited onto polymers materials. • Batch and roll-to-roll (R2R) atomic layer deposition (ALD) have been employed. • Deposition with either process improved the barrier properties. • Sensitivity of coated films to defects affects barrier obtained with R2R ALD.
Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Energy Technology Data Exchange (ETDEWEB)

Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-04-13

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.
Plated copper front side metallization on printed seed-layers for silicon solar cells

OpenAIRE

Kraft, Achim

2015-01-01

A novel copper front side metallization architecture for silicon solar cells based on a fine printed silver seed-layer, plated with nickel, copper and silver, is investigated. The work focuses on the printing of fine seed-layers with low silver consumption, the corrosion of the printed seed-layers by the interaction with electrolyte solutions and the encapsulation material on module level and on the long term stability of the cells due to copper migration. The investigation of the correlation...
Removal of contaminated asphalt layers by using heat generating powder metallic systems

International Nuclear Information System (INIS)

Barinov, A.S.; Karlina, O.K.; Ojovan, M.I.

1996-01-01

Heat generating systems on the base of powder metallic fuel were used for the removal of contaminated asphalt layers. Decontamination of spots which had complex geometric form was performed. Asphalt layers with deep contamination were removed essentially all radionuclides being retained in asphalt residue. Only a small part (1 - 2 %) of radionuclides could pass to combustion slag. No radionuclides were detected in aerosol-gas phase during decontamination process
Sliding wear resistance of metal matrix composite layers prepared by high power laser

NARCIS (Netherlands)

Ocelik, Vaclav; Matthews, D; de Hosson, Jeff

2005-01-01

Two laser surface engineering techniques, Laser Cladding and Laser Melt Injection (LMI), were used to prepare three different metal matrix composite layers with a thickness of about 1 mm and approximately 25-30% volume fraction of ceramic particles. SiC/Al-8Si, WC/Ti-6Al-4V and TiB2/Ti-6Al-4V layers
Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

Science.gov (United States)

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.
Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

Science.gov (United States)

Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

1999-06-01

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.
Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

Directory of Open Access Journals (Sweden)

Carvalho Luisa

2017-01-01

Full Text Available The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stainless steel 304L with europium (Eu as contaminant. This technique consists in spraying an Eu-solution on stainless steel samples. The specimens are firstly treated with a pulsed nanosecond laser after which the steel samples are placed in a 873 K furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer were analyzed by scanning electron microscopy coupled to an energy-dispersive X-ray microanalyzer, as well as by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm–4.5 μm depending on the laser treatment parameters and the heating duration. These contaminated oxides had a ‘duplex structure’ with a mean concentration of the order of 6 × 1016 atoms/cm2 (15 μg/cm2 of europium in the volume of the oxide layer. It appears that europium implementation prevented the oxide growth in the furnace. Nevertheless, the presence of the contamination had no impact on the thickness of the oxide layers obtained by preliminary laser treatment. These oxide layers were used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.
Heat-resistant organic molecular layer as a joint interface for metal reduction on plastics surfaces

International Nuclear Information System (INIS)

Sang, Jing; Aisawa, Sumio; Hirahara, Hidetoshi; Kudo, Takahiro; Mori, Kunio

2016-01-01

Graphical abstract: - Highlights: • In situ adsorption behaviors of TES on PA6 surface were clarified by QCM. • Highest adsorption of TES on PA6 was obtained in pH 3 and 0.1 M solution. • Molecular layers of TES with uniform structures were prepared on PA6 surface. • TES layer improved PA6 local heat resistance from 150 °C to 230 °C. • TES molecular layer successfully reduced Ag ion to Ag"0. - Abstract: Heat-resistant organic molecular layers have been fabricated by triazine-based silane coupling agent for metal reduction on plastic surfaces using adsorption method. These molecular layers were used as an interfacial layer between polyamide (PA6) and metal solution to reduce Ag"+ ion to Ag"0. The interfacial behaviors of triazine molecular layer at the interfaces between PA6 and Ag solution were investigated using quartz crystal microbalance (QCM). The kinetics of molecular adsorption on PA6 was investigated by using triazine-based silane coupling agent solutions at different pH and concentration. X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and local nano thermal analysis were employed to characterize the surfaces and interfaces. The nano thermal analysis results show that molecular layers of triazine-based silane coupling agent greatly improved heat resistance of PA6 resin from 170 °C up to 230 °C. This research developed an in-depth insight for molecular behaviors of triazine-based silane coupling agent at the PA6 and Ag solution interfaces and should be of significant value for interfacial research between plastics and metal solution in plating industry.
Heat-resistant organic molecular layer as a joint interface for metal reduction on plastics surfaces

Energy Technology Data Exchange (ETDEWEB)

Sang, Jing [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Aisawa, Sumio, E-mail: aisawa@iwate-u.ac.jp [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Hirahara, Hidetoshi [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Kudo, Takahiro [Sulfur Chemical Institute, 210, Collabo MIU, 4-3-5, Ueda, Morioka 020-0066 (Japan); Mori, Kunio [Department of Frontier Materials and Function Engineering, Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Sulfur Chemical Institute, 210, Collabo MIU, 4-3-5, Ueda, Morioka 020-0066 (Japan)

2016-04-15

Graphical abstract: - Highlights: • In situ adsorption behaviors of TES on PA6 surface were clarified by QCM. • Highest adsorption of TES on PA6 was obtained in pH 3 and 0.1 M solution. • Molecular layers of TES with uniform structures were prepared on PA6 surface. • TES layer improved PA6 local heat resistance from 150 °C to 230 °C. • TES molecular layer successfully reduced Ag ion to Ag{sup 0}. - Abstract: Heat-resistant organic molecular layers have been fabricated by triazine-based silane coupling agent for metal reduction on plastic surfaces using adsorption method. These molecular layers were used as an interfacial layer between polyamide (PA6) and metal solution to reduce Ag{sup +} ion to Ag{sup 0}. The interfacial behaviors of triazine molecular layer at the interfaces between PA6 and Ag solution were investigated using quartz crystal microbalance (QCM). The kinetics of molecular adsorption on PA6 was investigated by using triazine-based silane coupling agent solutions at different pH and concentration. X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and local nano thermal analysis were employed to characterize the surfaces and interfaces. The nano thermal analysis results show that molecular layers of triazine-based silane coupling agent greatly improved heat resistance of PA6 resin from 170 °C up to 230 °C. This research developed an in-depth insight for molecular behaviors of triazine-based silane coupling agent at the PA6 and Ag solution interfaces and should be of significant value for interfacial research between plastics and metal solution in plating industry.
Charge modification of the endothelial surface layer modulates the permeability barrier of isolated rat mesenteric small arteries

NARCIS (Netherlands)

van Haaren, Paul M. A.; VanBavel, Ed; Vink, Hans; Spaan, Jos A. E.

2005-01-01

We hypothesized that modulation of the effective charge density of the endothelial surface layer ( ESL) results in altered arterial barrier properties to transport of anionic solutes. Rat mesenteric small arteries ( diameter similar to 190 mu m) were isolated, cannulated, perfused, and superfused
Barrier mechanisms in the Drosophila blood-brain barrier

Directory of Open Access Journals (Sweden)

Samantha Jane Hindle

2014-12-01

Full Text Available The invertebrate blood-brain barrier field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through GPCR signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate blood-brain barrier has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many blood-brain barrier mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the blood-brain barrier can govern whole animal physiologies. This includes novel functions of blood-brain barrier gap junctions in orchestrating synchronized neuroblast proliferation, and of blood-brain barrier secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate blood-brain barrier anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.
Sol-gel deposition of buffer layers on biaxially textured metal substances

Science.gov (United States)

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
Scratch, wear and corrosion resistant organic inorganic hybrid materials for metals protection and barrier

International Nuclear Information System (INIS)

Barletta, M.; Gisario, A.; Puopolo, M.; Vesco, S.

2015-01-01

Highlights: • Polysiloxane coatings as protective barriers to delay erosion/corrosion of Fe 430 B metal substrates. • Methyl groups feature a very small steric hindrance and confer ductility to the Si–O–Si backbone. • Phenyl groups feature a larger steric hindrance, but they ensure stability and high chemical inertness. • Remarkable adhesion to the substrate, good scratch resistance and high wear endurance. • Innovative ways to design of long lasting protective barriers against corrosion and aggressive chemicals. - Abstract: Polysiloxanes are widely used as protective barriers to delay erosion/corrosion and increase chemical inertness of metal substrates. In the present work, a high molecular weight methyl phenyl polysiloxane resin was designed to manufacture a protective coating for Fe 430 B structural steel. Methyl groups feature very small steric hindrance and confer ductility to the Si–O–Si backbone of the organic inorganic hybrid resin, thus allowing the achievement of high thickness. Phenyl groups feature larger steric hindrance, but they ensure stability and high chemical inertness. Visual appearance and morphology of the coatings were studied by field emission scanning electron microscopy and contact gauge surface profilometry. Micro-mechanical response of the coatings was analyzed by instrumented progressive load scratch, while wear resistance by dry sliding linear reciprocating tribological tests. Lastly, chemical inertness and corrosion endurance of the coatings were evaluated by linear sweep voltammetry and chronoamperometry in aggressive acid environment. The resulting resins yielded protective materials, which feature remarkable adhesion to the substrate, good scratch resistance and high wear endurance, thus laying the foundations to manufacture long lasting protective barriers against corrosion and, more in general, against aggressive chemicals
Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

Science.gov (United States)

Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

1998-01-01

Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.
Synthesizing new types of ultrathin 2D metal oxide nanosheets via half-successive ion layer adsorption and reaction

Science.gov (United States)

Gao, Linjie; Li, Yaguang; Xiao, Mu; Wang, Shufang; Fu, Guangsheng; Wang, Lianzhou

2017-06-01

Two-dimensional (2D) metal oxide nanosheets have demonstrated their great potential in a broad range of applications. The existing synthesis strategies are mainly preparing 2D nanosheets from layered and specific transition metal oxides. How to prepare the other types of metal oxides as ultrathin 2D nanosheets remains unsolved, especially for metal oxides containing alkali, alkaline earth metal, and multiple metal elements. Herein, we developed a half-successive ion layer adsorption and reaction (SILAR) method, which could synthesize those types of metal oxides as ultrathin 2D nanosheets. The synthesized 2D metal oxides nanosheets are within 1 nm level thickness and 500 m2 · g-1 level surface area. This method allows us to develop many new types of ultrathin 2D metal oxides nanosheets that have never been prepared before.
The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

International Nuclear Information System (INIS)

Watson, G.P.; Ast, D.G.; Anderson, T.J.; Pathangey, B.

1993-01-01

In a previous report [G. P. Watson, D. G. Ast, T. J. Anderson, and Y. Hayakawa, Appl. Phys. Lett. 58, 2517 (1991)] we demonstrated that the motion of misfit dislocations in InGaAs, grown by organometallic vapor phase epitaxy on patterned GaAs substrates, can be impeded even if the strained epitaxial layer is continuous. Trenches etched into GaAs before growth are known to act as a barrier to misfit dislocation propagation [E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. 65, 2220 (1989)] when those trenches create discontinuities in the epitaxial layers; but even shallow trenches, with continuous strained layers following the surface features, can act as barriers. By considering the strain energy required to change the length of the dislocation glide segments that stretch from the interface to the free surface, a simple model is developed that explains the major features of the unique blocking action observed at the trench edges. The trench wall angle is found to be an important parameter in determining whether or not a trench will block dislocation glide. The predicted blocking angles are consistent with observations made on continuous 300 and 600 nm thick In 0.04 Ga 0.96 As films on patterned GaAs. Based on the model, a structure is proposed that may be used as a filter to yield misfit dislocations with identical Burgers vectors or dislocations which slip in only one glide plane
Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Parijat; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215 (United States)

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

Silver doped metal layers for medical applications

International Nuclear Information System (INIS)

Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

2014-01-01

Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.
Silver-doped metal layers for medical applications

International Nuclear Information System (INIS)

Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

2014-01-01

Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness. (paper)
Fabrication of Polymer Solar Cells Using Aqueous Processing for All Layers Including the Metal Back Electrode

DEFF Research Database (Denmark)

Søndergaard, Roar; Helgesen, Martin; Jørgensen, Mikkel

2011-01-01

The challenges of printing all layers in polymer solar cells from aqueous solution are met by design of inks for the electron-, hole-, active-, and metallic back electrode-layers. The conversion of each layer to an insoluble state after printing enables multilayer formation from the same solvent...
A flexible ligand-based wavy layered metal-organic framework for lithium-ion storage.

Science.gov (United States)

An, Tiance; Wang, Yuhang; Tang, Jing; Wang, Yang; Zhang, Lijuan; Zheng, Gengfeng

2015-05-01

A substantial challenge for direct utilization of metal-organic frameworks (MOFs) as lithium-ion battery anodes is to maintain the rigid MOF structure during lithiation/delithiation cycles. In this work, we developed a flexible, wavy layered nickel-based MOF (C20H24Cl2N8Ni, designated as Ni-Me4bpz) by a solvothermal approach of 3,3',5,5'-tetramethyl-4,4'-bipyrazole (H2Me4bpz) with nickel(II) chloride hexahydrate. The obtained MOF materials (Ni-Me4bpz) with metal azolate coordination mode provide 2-dimensional layered structure for Li(+) intercalation/extraction, and the H2Me4bpz ligands allow for flexible rotation feature and structural stability. Lithium-ion battery anodes made of the Ni-Me4bpz material demonstrate excellent specific capacity and cycling performance, and the crystal structure is well preserved after the electrochemical tests, suggesting the potential of developing flexible layered MOFs for efficient and stable electrochemical storage. Copyright © 2015 Elsevier Inc. All rights reserved.
Poly I-lactide-layered double hydroxide nanocomposites via in situ polymerization of I-lactide

DEFF Research Database (Denmark)

Katiyar, Vimal; Gerds, N.; Koch, C.B.

2010-01-01

The use of clay nanofillers offers a potential route to improved barrier properties in polylactide films. Magnesium–aluminium layered double hydroxides (LDHs) are interesting in this respect and we therefore explored synthesis of PLA-LDH nanocomposites by ring-opening polymerization. This method ...... weight was significantly reduced when in-situ polymerization was conducted in the presence of the LDHs and we suggest that chain termination via LDH surface hydroxyl groups and/or metal-catalyzed degradation could be responsible.......The use of clay nanofillers offers a potential route to improved barrier properties in polylactide films. Magnesium–aluminium layered double hydroxides (LDHs) are interesting in this respect and we therefore explored synthesis of PLA-LDH nanocomposites by ring-opening polymerization. This method...
Disruption of an Alumina Layer During Sintering of Aluminium in Nitrogen

Directory of Open Access Journals (Sweden)

Pieczonka T.

2017-06-01

Full Text Available Aluminium oxide layer on aluminium particles cannot be avoided. However, to make the metal-metal contacts possible, this sintering barrier has to be overcome in some way, necessarily to form sintering necks and their development. It is postulated that the disruption of alumina layer under sintering conditions may originate physically and chemically. Additionally, to sinter successfully non alloyed aluminium powder in nitrogen, the operation of both types mechanism is required. It is to be noted that metallic aluminium surface has to be available to initiate reactions between aluminium and the sintering atmosphere, i.e. mechanical disruption of alumina film precedes the chemical reactions, and only then chemically induced mechanisms may develop. Dilatometry, gravimetric and differential thermal analyses, and microstructure investigations were used to study the sintering response of aluminium at 620°C in nitrogen, which is the only sintering atmosphere producing shrinkage.
Interface Schottky barrier engineering via strain in metal-semiconductor composites

Science.gov (United States)

Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

2016-01-01

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation
The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

KAUST Repository

Brennan, Thomas P.; Bakke, Jonathan R.; Ding, I-Kang; Hardin, Brian E.; Nguyen, William H.; Mondal, Rajib; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; Sellinger, Alan; McGehee, Michael D.; Bent, Stacey F.

2012-01-01

Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying
Layer-by-Layer Motif Architectures: Programmed Electrochemical Syntheses of Multilayer Mesoporous Metallic Films with Uniformly Sized Pores.

Science.gov (United States)

Jiang, Bo; Li, Cuiling; Qian, Huayu; Hossain, Md Shahriar A; Malgras, Victor; Yamauchi, Yusuke

2017-06-26

Although multilayer films have been extensively reported, most compositions have been limited to non-catalytically active materials (e.g. polymers, proteins, lipids, or nucleic acids). Herein, we report the preparation of binder-free multilayer metallic mesoporous films with sufficient accessibility for high electrocatalytic activity by using a programmed electrochemical strategy. By precisely tuning the deposition potential and duration, multilayer mesoporous architectures consisting of alternating mesoporous Pd layers and mesoporous PdPt layers with controlled layer thicknesses can be synthesized within a single electrolyte, containing polymeric micelles as soft templates. This novel architecture, combining the advantages of bimetallic alloys, multilayer architectures, and mesoporous structures, exhibits high electrocatalytic activity for both the methanol oxidation reaction (MOR) and the ethanol oxidation reaction (EOR). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Energy barriers for diffusion on heterogeneous stepped metal surfaces: Ag/Cu(110)

International Nuclear Information System (INIS)

Sbiaai, K.; Boughaleb, Y.; Mazroui, M.; Hajjaji, A.; Kara, A.

2013-01-01

In this paper we investigated the diffusion of Ag adatom by computing the energy barriers for many elementary diffusive processes which are likely to happen near to the step edge on Cu (110). The barriers are calculated by means of molecular dynamics simulation by using embedded atom potentials. The proximity to steps alters these barriers considerably, and very different results may be expected. In fact, our numerical calculations show that the diffusion via jump process along step edge is predominant for Ag/Cu(110) and the diffusion over the step occurs sometimes, but only via exchange mechanisms. The adatom diffusion across channels is difficult due to the high value of activation energy required (around 1 eV). Furthermore, we found the Ehrlich–Schwoebel barrier for diffusion around 120 meV in order to descend via exchange process and of the order of 170 meV via hopping mode. This aspect may have a strong influence on the growth character. In general our results suggest that, for our metal system, diffusion mechanism may be important for mass transport across the steps. Implications of these findings are discussed. - Highlights: • Study of adatom diffusion near the step edge • The diffusion along channel is enhanced through jump process. • Arrhenius law is satisfied for a wide range of temperature (310–600 K)
Application of polycrystalline diffusion barriers

International Nuclear Information System (INIS)

Tsymbal, V.A.; Kolupaev, I.N.

2010-01-01

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi 2 ) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase DB is made and recommendations for practical methods of increase of blocking properties PDB are made.
InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.
Development of membrane filters with nanostructured porous layer by coating of metal nanoparticles sintered onto a micro-filter

International Nuclear Information System (INIS)

Park, Seok Joo; Park, Young Ok; Lee, Dong Geun; Ryu, Jeong In

2008-01-01

The membrane filter adhered with nanostructured porous layer was made by heat treatment after deposition of nanoparticle-agglomerates sintered in aerosol phase onto a conventional micron-fibrous metal filter as a substrate filter. The Sintered-Nanoparticle-Agglomerates-coated NanoStructured porous layer Membrane Filter (SNA-NSMF), whose the filtration performance was improved compared with the conventional metal membrane filters, was developed by adhesion of nanoparticle-agglomerates of dendrite structure sintered onto the micron-fibrous metal filter. The size of nanoparticle-agglomerates of dendrite structure decreased with increasing the sintering temperature because nanoparticle-agglomerates shrank. When shrinking nanoparticle-agglomerates were deposited and treated with heat onto the conventional micron-fibrous metal filter, pore size of nanostructured porous layer decreased. Therefore, pressure drops of SNA-NSMFs increased from 0.3 to 0.516 KPa and filtration efficiencies remarkably increased from 95.612 to 99.9993%
Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

OpenAIRE

Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

2017-01-01

The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stai...
Thin film pc-Si by aluminium induced crystallization on metallic substrate

Directory of Open Access Journals (Sweden)

Cayron C.

2013-04-01

Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.
Article Including Environmental Barrier Coating System

Science.gov (United States)

Lee, Kang N. (Inventor)

2015-01-01

An enhanced environmental barrier coating for a silicon containing substrate. The enhanced barrier coating may include a bond coat doped with at least one of an alkali metal oxide and an alkali earth metal oxide. The enhanced barrier coating may include a composite mullite bond coat including BSAS and another distinct second phase oxide applied over said surface.
Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2016-05-15

Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very
Preliminary tests of an electrokinetic barrier to prevent heavy metal pollution of soils

International Nuclear Information System (INIS)

Lynch, R.J.; Muntoni, A.; Ruggeri, R.; Winfield, K.C.

2007-01-01

Sardinia has to deal with significant environmental problems related to heavy-metal contamination, mainly located at its abandoned mining districts. In particular, acid mine drainage management and groundwater pollution are typical problems associated with mining activities which constitute a serious threat to human health. To prevent contaminant spread over the adjacent environment, it is of great interest to consider using an electric field as a containment fence to counteract pollutant transport. In this application, contaminant transport due to a hydraulic gradient driving force is prevented by the combined effect of electro-osmosis and electro-migration. Although there are other alternative containment technologies, the electrokinetic fence offers many advantages, as it is easy to operate, there is a minimal exposure to the operating personnel and it is likely to be effective for a wide range of contaminants. In this work, both one-dimensional (1D) and two-dimensional (2D) tests have been carried out. In the 1D tests, the efficiency of an electrokinetic barrier to prevent cadmium from polluting an uncontaminated sample was investigated; soil pH, metal concentration and current intensity have been monitored; results indicate that the barrier can prevent or significantly reduce heavy-metal contamination from spreading against a hydraulic gradient of 7. In 2D tests, two rows of electrodes inserted in a horizontally flat soil tank were used to generate an electric field. It was found that an electric field of 125 V m -1 was sufficient to prevent significant copper incursion from a contaminant flow under a hydraulic gradient of 1.3
Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results

International Nuclear Information System (INIS)

Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chiou, Shan-Haw; Huang, Chiung-Hui; Liu, Chia-Mei; Lin, Yu-Li; Chao, Wen-Hsuan; Yang, Ping-Hsing; Chang, Chun-Yen; Cheng, Chin-Pao

2014-01-01

Highlights: • The diffusion behavior was originated from high-vapor-pressure Te atom. • Te out-diffusion is main driving force to cause inter-diffusion effect. • Mid-band Ta and TaN with favored ohmic-like contact showed small diffusion tail. • Strong Ta-N bonding and high total energy suppressed interfacial layer formation. -- Abstract: This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta–N bonding and a high total energy of −4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer
Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

1994-01-01

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Metal droplet erosion and shielding plasma layer under plasma flows typical of transient processes in tokamaks

Energy Technology Data Exchange (ETDEWEB)

Martynenko, Yu. V., E-mail: Martynenko-YV@nrcki.ru [National Research Nuclear University “MEPhI” (Russian Federation)

2017-03-15

It is shown that the shielding plasma layer and metal droplet erosion in tokamaks are closely interrelated, because shielding plasma forms from the evaporated metal droplets, while droplet erosion is caused by the shielding plasma flow over the melted metal surface. Analysis of experimental data and theoretical models of these processes is presented.
Single-layer dispersions of transition metal dichalcogenides in the synthesis of intercalation compounds

International Nuclear Information System (INIS)

Golub, Alexander S; Zubavichus, Yan V; Slovokhotov, Yurii L; Novikov, Yurii N

2003-01-01

Chemical methods for the exfoliation of transition metal dichalcogenides in a liquid medium to give single-layer dispersions containing quasi-two-dimensional layers of these compounds are surveyed. Data on the structure of dispersions and their use in the synthesis of various types of heterolayered intercalation compounds are discussed and described systematically. Structural features, the electronic structure and the physicochemical properties of the resulting intercalation compounds are considered. The potential of this method of synthesis is compared with that of traditional solid-state methods for the intercalation of layered crystals.
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

Science.gov (United States)

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.
Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

International Nuclear Information System (INIS)

Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

2014-01-01

Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films
Wear resistance of layers hard faced by the high-alloyed filler metal

Directory of Open Access Journals (Sweden)

Dušan Arsić

2016-10-01

Full Text Available The objective of this work was to determine the wear resistance of layers hard faced by the high-alloyed filler metal, with or without the austenite inter-layer, on parts that operate at different sliding speeds in conditions without lubrication. The samples were hard faced with the filler metal E 10-UM-60-C with high content of C, Cr and W. Used filler metal belongs into group of alloys aimed for reparatory hard facing of parts damaged by abrasive and erosive wear and it is characterized by high hardness and wear resistance. In experiments, the sliding speed and the normal loading were varied and the wear scar was monitored, based on which the volume of the worn material was calculated analytically. The contact duration time was monitored over the sliding path of 300 mm. The most intensive wear was established for the loading force of 100 N and the sliding speed of 1 m.s-1, though the significant wear was also noticed in conditions of the small loading and speed of 0.25 m.s-1, which was even greater that at larger speeds.
Synthesis, characterization and application of two-dimensional layered metal hydroxides for environmental remediation purposes

Science.gov (United States)

Machingauta, Cleopas

Two-dimensional layered nano composites, which include layered double hydroxides (LDHs), hydroxy double salts (HDSs) and layered hydroxide salts (LHSs) are able to intercalate different molecular species within their gallery space. These materials have a tunable structural composition which has made them applicable as fire retardants, adsorbents, catalysts, catalyst support materials, and ion exchangers. Thermal treatment of these materials results in destruction of the layers and formation of mixed metal oxides (MMOs) and spinels. MMOs have the ability to adsorb anions from solution and may also regenerate layered structures through a phenomenon known as memory effect. Zinc-nickel hydroxy nitrate was used for the uptake of a series of halogenated acetates (HAs). HAs are pollutants introduced into water systems as by-products of water chlorination and pesticide degradation; their sequestration from water is thus crucial. Optimization of layered materials for controlled uptake requires an understanding of their ion-exchange kinetics and thermodynamics. Exchange kinetics of these anions was monitored using ex-situ PXRD, UV-vis, HPLC and FTIR. It was revealed that exchange rates and uptake efficiencies are related to electronic spatial extents and the charge on carboxyl-oxygen atoms. In addition, acetate and nitrate-based HDSs were used to explore how altering the hydroxide layer affects uptake of acetate/nitrate ions. Changing the metal identities affects the interaction of the anions with the layers. From FTIR, we observed that nitrates coordinate in a D3h and Cs/C 2v symmetry; the nitrates in D3h symmetry were easily exchangeable. Interlayer hydrogen bonding was also revealed to be dependent on metal identity. Substituting divalent cations with trivalent cations produces materials with a higher charge density than HDSs and LHSs. A comparison of the uptake efficiency of zinc-aluminum, zinc-gallium and zinc-nickel hydroxy nitrates was performed using trichloroacetic
Microtransfer printing of metal ink patterns onto plastic substrates utilizing an adhesion-controlled polymeric donor layer

International Nuclear Information System (INIS)

Park, Ji-Sub; Choi, Jun-Chan; Park, Min-Kyu; Bae, Jeong Min; Bae, Jin-Hyuk; Kim, Hak-Rin

2016-01-01

We propose a method for transfer-printed electrode patterns onto flexible/plastic substrates, specifically intended for metal ink that requires a high sintering temperature. Typically, metal-ink-based electrodes cannot be picked up for microtransfer printing because the adhesion between the electrodes and the donor substrate greatly increases after the sintering process due to the binding materials. We introduced a polymeric donor layer between the printed electrodes and the donor substrate and effectively reduced the adhesion between the Ag pattern and the polymeric donor layer by controlling the interfacial contact area. After completing a wet-etching process for the polymeric donor layer, we obtained Ag patterns supported on the fine polymeric anchor structures; the Ag patterns could be picked up onto the stamp surface even after the sintering process by utilizing the viscoelastic properties of the elastomeric stamp with a pick-up velocity control. The proposed method enables highly conductive metal-ink-based electrode patterns to be applied on thermally weak plastic substrates via an all-solution process. Metal electrodes transferred onto a film showed superior electrical and mechanical stability under the bending stress test required for use in printed flexible electronics. (paper)
Metal Surface Modification for Obtaining Nano- and Sub-Nanostructured Protective Layers

Science.gov (United States)

Ledovskykh, Volodymyr; Vyshnevska, Yuliya; Brazhnyk, Igor; Levchenko, Sergiy

2017-03-01

Regularities of the phase protective layer formation in multicomponent systems involving inhibitors with different mechanism of protective action have been investigated. It was shown that optimization of the composition of the inhibition mixture allows to obtain higher protective efficiency owing to improved microstructure of the phase layer. It was found that mechanism of the film formation in the presence of NaNO2-PHMG is due to deposition of slightly soluble PHMG-Fe complexes on the metal surface. On the basis of the proposed mechanism, the advanced surface engineering methods for obtaining nanoscaled and sub-nanostructured functional coatings may be developed.
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

Energy Technology Data Exchange (ETDEWEB)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

International Nuclear Information System (INIS)

Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

2016-01-01

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.
InGaP Heterojunction Barrier Solar Cells

Science.gov (United States)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.
Chemically-modified graphene sheets as an active layer for eco-friendly metal electroplating on plastic substrates

International Nuclear Information System (INIS)

Oh, Joon-Suk; Hwang, Taeseon; Nam, Gi-Yong; Hong, Jung-Pyo; Bae, Ah-Hyun; Son, Sang-Ik; Lee, Geun-Ho; Sung, Hak kyung; Choi, Hyouk Ryeol; Koo, Ja Choon; Nam, Jae-Do

2012-01-01

Eco-friendly nickel (Ni) electroplating was carried out on a plastic substrate using chemically modified graphene sheets as an active and conductive layer to initiate electroplating without using conventional pre-treatment or electroless metal-seeding processes. A graphene oxide (GO) solution was self-assembled on a polyethylene terephthalate (PET) film followed by evaporation to give GO layers (thickness around 6.5 μm) on PET (GO/PET) film. Then, the GO/PET film was chemically and thermally reduced to convert the GO layers to reduced graphene oxide (RGO) layers on the PET substrate. The RGO-coated PET (RGO/PET) film showed the sheet resistance of 100 Ω per square. On RGO/PET film, Ni electroplating was conducted under the constant-current condition and the entire surface of the PET film was completely metalized with Ni without any voids.
Global transport and localized layering of metallic ions in the upper atmospherer

Directory of Open Access Journals (Sweden)

L. N. Carter

1999-02-01

Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.
Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers.

Science.gov (United States)

Li, Cheng; Credgington, Dan; Ko, Doo-Hyun; Rong, Zhuxia; Wang, Jianpu; Greenham, Neil C

2014-06-28

The performance of organic solar cells incorporating solution-processed titanium suboxide (TiOx) as electron-collecting layers can be improved by UV illumination. We study the mechanism of this improvement using electrical measurements and electroabsorption spectroscopy. We propose a model in which UV illumination modifies the effective work function of the oxide layer through a significant increase in its free electron density. This leads to a dramatic improvement in device power conversion efficiency through several mechanisms - increasing the built-in potential by 0.3 V, increasing the conductivity of the TiOx layer and narrowing the interfacial Schottky barrier between the suboxide and the underlying transparent electrode. This work highlights the importance of considering Fermi-level equilibration when designing multi-layer transparent electrodes.
Determination of stable shapes of a thin liquid metal layer using a boundary integral method

Energy Technology Data Exchange (ETDEWEB)

Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

2006-03-21

This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions.
Determination of stable shapes of a thin liquid metal layer using a boundary integral method

International Nuclear Information System (INIS)

Hinaje, M; Vinsard, G; Dufour, S

2006-01-01

This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions
Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1998-01-01

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....
Study on advanced Ce0.9La0.1O2/Gd2Zr2O7 buffer layers architecture towards all chemical solution processed coated conductors

DEFF Research Database (Denmark)

Yue, Zhao; Ma, L.; Wu, W.

2015-01-01

2Zr2O7 buffer layer stack and the 200 nm thick YBa2Cu3O7 (YBCO) superconducting layer were sequentially deposited on textured NiW substrates using metal-organic deposition routes. The surface texture of the Gd2Zr2O7 barrier layer deteriorates when the film thickness increases to 80 nm, although...
Simulations of thermal Rayleigh-Marangoni convection in a three-layer liquid-metal-battery model

Science.gov (United States)

Köllner, Thomas; Boeck, Thomas; Schumacher, Jörg

2017-11-01

Operating a liquid-metal battery produces Ohmic losses in the electrolyte layer that separates both metal electrodes. As a consequence, temperature gradients establish which potentially cause thermal convection since density and interfacial tension depend on the local temperature. In our numerical investigations, we considered three plane, immiscible layers governed by the Navier-Stokes-Boussinesq equations held at a constant temperature of 500°C at the bottom and top. A homogeneous current is applied that leads to a preferential heating of the mid electrolyte layer. We chose a typical material combination of Li separated by LiCl-KCl (a molten salt) from Pb-Bi for which we analyzed the linear stability of pure thermal conduction and performed three-dimensional direct-numerical simulations by a pseudospectral method probing different: electrolyte layer heights, overall heights, and current densities. Four instability mechanisms are identified, which are partly coupled to each other: buoyant convection in the upper electrode, buoyant convection in the molten salt layer, and Marangoni convection at both interfaces between molten salt and electrode. The global turbulent heat transfer follows scaling predictions for internally heated buoyant convection. Financial support by the Deutsche Forschungsgemeinschaft under Grant No. KO 5515/1-1 is gratefully acknowledged.
Investigation of Selective Laser Melting Surface Alloyed Aluminium Metal Matrix Dispersive Reinforced Layers

Science.gov (United States)

Kamburov, V. V.; Dimitrova, R. B.; Kandeva, M. K.; Sofronov, Y. P.

2018-01-01

The aim of the paper is to investigate the improvement of mechanical properties and in particular wear resistance of laser surface alloyed dispersive reinforced thin layers produced by selective laser melting (SLM) technology. The wear resistance investigation of aluminium matrix composite layers in the conditions of dry friction surface with abrasive particles and nanoindentation tests were carried out. The process parameters (as scan speed) and their impact on the wear resistant layers have been evaluated. The alloyed layers containing metalized SiC particles were studied by Optical and Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray microanalysis (EDX). The obtained experimental results of the laser alloyed thin layers show significant development of their wear resistance and nanohardness due to the incorporated reinforced phase of electroless nickel coated SiC particles.

“Slowing” and “Narrowing” the Flow of Metals for Consumer Goods: Evaluating Opportunities and Barriers

Directory of Open Access Journals (Sweden)

Elsa Dominish

2018-04-01

Full Text Available Metal resources are essential materials for many consumer products, including vehicles and a wide array of electrical and electronic goods. These metal resources often cause adverse social and environmental impacts from their extraction, supply and disposal, and it is therefore important to increase the sustainability of their production and use. A broad range of strategies and actions to improve the sustainability of resources are increasingly being discussed within the evolving concept of the circular economy. This paper uses this lens to evaluate the opportunities and barriers to improve the sustainability of metals in consumer products in Australia, with a focus on strategies that “slow” and “narrow” material flow loops. We have drawn on Allwood’s characterisation of material efficiency strategies, as they have the potential to reduce the total demand for metals. These strategies target the distribution, sale, and use of products, which have received less research attention compared to the sustainability of mining, production, and recycling, yet it is vitally important for changing patterns of consumption in a circular economy. Specifically, we have considered the strategies of product longevity (life extension, intensity of use, repair, and resale, remanufacturing, component reuse, and using less material for the same product or service (digitisation, servicisation, and light-weighting. Within the Australian context, this paper identifies the strategies that have the greatest opportunity to increase material efficiency for metal-containing products (such as mobility, household appliances, and personal electronics, by evaluating current implementation of these strategies and identifying the material, economic, and social barriers to and opportunities for expanding these strategies. We find that many of these strategies have been successfully implemented for mobility, while applying these strategies to personal electronics remains
Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

2015-01-15

In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.
Micro-layers of polystyrene film preventing metal oxidation: implications in cultural heritage conservation

Science.gov (United States)

Giambi, Francesca; Carretti, Emiliano; Dei, Luigi; Baglioni, Piero

2014-12-01

Protection of surfaces directly exposed to the detrimental action of degradative agents (i.e. oxygen, air pollutants and bacteria) is one of the most important challenges in the field of conservation of works of art. Metallic objects are subjected to specific surface corrosion phenomena that, over the years, make mandatory the research of innovative materials that should avoid the direct contact between the metal surface and the weathering agents. In this paper, the set-up, characterisation and application of a new reversible material for preserving metal artefacts are reported. Micro-layers constituted of low-adhesive polystyrene (PS) films obtained from recycling waste packaging materials made of expanded PS were studied. The morphology and thickness of PS films were characterised by optical, atomic force and scanning electron microscopy (SEM). A further check on thickness was carried out by means of visible spectrophotometry doping the films with a hydrophobic dye. Thermal properties of the PS micro-layers were studied by means of differential scanning calorimetry coupled with optical microscopy. Permeability of the PS films to water vapour was also determined. The potential of the low-adhesive PS films, that enabled an easy removal in case of film deterioration, for preventing metal oxidation was investigated on brass specimens by simulating standard artificial corrosion programmes. Morphological and chemical (coupling the energy-dispersive X-rays spectrometry to SEM measurements) analyses carried out on these metal samples showed promising results in terms of surface protection against corrosion.
Investigation of porosity and fractal properties of the sintered metal and semiconductor layers in the MDS capacitor structure

Directory of Open Access Journals (Sweden)

Skatkov Leonid

2012-01-01

Full Text Available MDS capacitor (metal - dielectric - semiconductor is a structure in which metal plate is represented by compact bulk-porous pellets of niobium sintered powder, and semiconductor plate - by pyrolytic layer of MnO2. In the present paper we report the results of investigation of microporosity of sintered Nb and pyrolytic MnO2 and also the fractal properties of semiconductor layer.
4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

International Nuclear Information System (INIS)

Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

2015-01-01

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories
4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

Energy Technology Data Exchange (ETDEWEB)

Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

2015-10-05

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.
Initial multi-parameter detection of atmospheric metal layers by Beijing Na–K lidar

International Nuclear Information System (INIS)

Jiao, Jing; Yang, Guotao; Wang, Jihong; Cheng, Xuewu; Du, Lifang; Wang, Zelong; Gong, Wei

2017-01-01

Beijing Na–K lidar has been started running in 2010. This lidar has two laser beams: one dye laser emits a 589-nm laser beam for Na layer detection; the other dye laser emits a 770-nm laser beam for K layer detection. Under similar conditions, the echo signal of K layer is only about 2 orders of magnitude smaller than that of Na layer. This lidar has a sufficient Signal Noise Ratio (SNR). The structure and details of potassium layer can be effectively distinguished from a single original echo. Several examples of co-observation of density of Na and K layer showed some different results with previous studies. This lidar not only can supplement the lack of Na and K layer observation at this latitude region, but also provide evidence for the atmospheric sciences and space environment monitoring. - Highlights: • Full-band dual-beam lidar at 40°N. • Detecting sodium and potassium layer simultaneously. • Providing a supplement to the study of atmospheric metal layers and evidence for atmospheric sciences and space and atmospheric sciences and space environment monitoring.
Multiphase layered oxide growth on pure metals. I. General formulation

International Nuclear Information System (INIS)

Fromhold, A.T. Jr.

1982-01-01

A general formulation for the simultaneous growth of any number of layered planar oxide phases on a pure metal under diffusion-controlled conditions has been developed. Four individual situations have been developed in detail, namely, situations in which the predominant mode of ion transport is by cation interstitials, cation vacancies, anion interstitials, or anion vacancies. The generalized formulation enables the determination of quasi-steady-state growth kinetics following step function changes in the experimental conditions such as ambient oxygen pressure or temperature. Numerical evaluation of the coupled growth equations for the individual phases is required to deduce the general predictions of the theory. In the limit of two-layer growth by cation interstitial diffusion, the present formulation reproduces the earlier results of Fromhold and Sato
Activation barriers for series of exothermic homologous reactions. VI. Reactions of lanthanide and transition metal atoms.

Science.gov (United States)

Blue, Alan S.; Fontijn, Arthur

2001-09-01

Semiempirical configuration interaction (SECI) theory to predict activation barriers, E, as given by k(T)=ATn exp(-E(RT), has been applied to homologous series of lanthanide (LN) and transition metal (TM) atom oxidation reactions. This was achieved by considering as homologous series reactions of elements differing only by the number of electrons in one subshell. Comparison between SECI and experimental results leads to an average deviation for the LN+N2O reactions of 0.66 kJ mol-1, and up to 5.5 kJ mol-1 for other series. Thirty-one activation barriers are reported.
Layer-by-layer assembly of thin film oxygen barrier

International Nuclear Information System (INIS)

Jang, Woo-Sik; Rawson, Ian; Grunlan, Jaime C.

2008-01-01

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation ( 2 /day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging
Effect of gold subsurface layer on the surface activity and segregation in Pt/Au/Pt3M (where M = 3d transition metals) alloy catalyst from first-principles.

Science.gov (United States)

Kim, Chang-Eun; Lim, Dong-Hee; Jang, Jong Hyun; Kim, Hyoung Juhn; Yoon, Sung Pil; Han, Jonghee; Nam, Suk Woo; Hong, Seong-Ahn; Soon, Aloysius; Ham, Hyung Chul

2015-01-21

The effect of a subsurface hetero layer (thin gold) on the activity and stability of Pt skin surface in Pt3M system (M = 3d transition metals) is investigated using the spin-polarized density functional theory calculation. First, we find that the heterometallic interaction between the Pt skin surface and the gold subsurface in Pt/Au/Pt3M system can significantly modify the electronic structure of the Pt skin surface. In particular, the local density of states projected onto the d states of Pt skin surface near the Fermi level is drastically decreased compared to the Pt/Pt/Pt3M case, leading to the reduction of the oxygen binding strength of the Pt skin surface. This modification is related to the increase of surface charge polarization of outmost Pt skin atoms by the electron transfer from the gold subsurface atoms. Furthermore, a subsurface gold layer is found to cast the energetic barrier to the segregation loss of metal atoms from the bulk (inside) region, which can enhance the durability of Pt3M based catalytic system in oxygen reduction condition at fuel cell devices. This study highlights that a gold subsurface hetero layer can provide an additional mean to tune the surface activity toward oxygen species and in turn the oxygen reduction reaction, where the utilization of geometric strain already reaches its practical limit.
Preparation and characterization of metallic supported thin Pd-Ag membranes for hydrogen separation

OpenAIRE

Fernandez, Ekain; Medrano, Jose Antonio; Melendez, Jon; Parco, Maria; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.

2015-01-01

This paper reports the preparation and characterization of thin-film (4-5 µm thick) Pd-Ag metallic supported membranes for high temperature applications. Various thin film membranes have been prepared by depositing a ceramic interdiffusion barrier layer prior to the simultaneous Pd-Ag electroless plating deposition. Two deposition techniques for ceramic layers (made of zirconia and alumina) have been evaluated: atmospheric plasma spraying and dip coating of a powder suspension. Initially, the...
Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

Science.gov (United States)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.
Multiple layered metallic nanostructures for strong surface-enhanced Raman spectroscopy enhancement

International Nuclear Information System (INIS)

Xia, Ming; Xie, Ya-Hong; Qiao Kuan; Cheng Zhiyuan

2016-01-01

We report a systematic study on a practical way of patterning metallic nanostructures to achieve high surface-enhanced Raman spectroscopy (SERS) enhancement factors (EFs) and high hot-spot density. By simply superimposing a 1-layer Au nanotriangle array on another to form a multilayer nanotriangle array, the SERS signal can be enhanced by 2 orders of magnitude compared with a 1-layer nanotriangle array. The drastic increases in the SERS EF and the hot spot density of the multilayer Au nanotriangle array are due to the increase in the number of gaps formed between Au nanotriangles and the decrease of the gap width. (author)
Using thin metal layers on composite structures for shielding the electromagnetic pulse caused by nearby lightning

NARCIS (Netherlands)

Blaj, M.A.; Buesink, Frederik Johannes Karel; Damstra, G.C.; Leferink, Frank Bernardus Johannes

2011-01-01

Electronic systems in composite structures could be vulnerable to the (dominant magnetic) field caused by a lightning strike, because only thin layers of metal can be used on composite structures. Thin layers result in a very low shielding effectiveness against magnetic fields. Many experiments
Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

2013-01-01

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.
Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.

2013-12-23

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.
Global transport and localized layering of metallic ions in the upper atmospherer

Directory of Open Access Journals (Sweden)

L. N. Carter

Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.

Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.
Highly sensitive multi-layer pressure sensor with an active nanostructured layer of an organic molecular metal

International Nuclear Information System (INIS)

Laukhin, V; Lebedev, V; Laukhina, E; Rovira, C; Veciana, J

2016-01-01

This work addresses to the modern technologies that need to be instrumented with lightweight highly sensitive pressure sensors. The paper presents the development of a new plain flexible thin pressure sensor using a nanostructured layer of the highly sensitive organic piezoresistive metal β-(BEDT-TTF) 2 I 3 as an active component; BEDT-TTF=bis (ethylenedithio)tetrathiafulvalene. The original construction approach permits one to operate the developed sensor on the principle of electrical resistance variations when its piezoresistive layer is elongated under a pressure increase. The pressure sensing element and a set of gold electrodes were integrated into one compact multi-layer design. The construction was optimized to enable one generic design for pressure ranges from 1 to 400 bar. The pressure tests showed that the sensor is able to control a small pressure change as a well definite electrical signal. So the developed type of the sensors is very attractive as a new generation of compact, lightweight, low-cost sensors that might monitor pressure with a good level of measurement accuracy. (paper)
Applicability of the Reaction Layer Principle to Nanoparticulate Metal Complexes at a Macroscopic Reactive (Bio)Interface

NARCIS (Netherlands)

Duval, Jérôme F.L.; Town, Raewyn M.; Leeuwen, Van Herman P.

2017-01-01

The reaction layer concept is commonly adopted to estimate the contribution of metal complexes to the flux of free metal ions (M) toward a macroscopic M-accumulating (bio)interface, e.g., a biosurface (microorganism) or a sensor (electrode). This concept is well-established for molecular ligands

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

Science.gov (United States)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.
Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

Directory of Open Access Journals (Sweden)

Mérel Philippe

2010-01-01

Full Text Available Abstract Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer.
Pulsed laser planarization of metal films for multilevel interconnects

International Nuclear Information System (INIS)

Tuckerman, D.B.; Schmitt, R.L.

1985-05-01

Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 μs) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of metals is particularly well suited to multilevel systems which include ground or power planes. Results are presented for planarization of gold films on SiO 2 dielectric layers using a flashlamp-pumped dye laser. The pulse duration is approx.1 μs, which allows the heat pulse to uniformly penetrate the gold while not penetrating substantially through the underlying SiO 2 (hence not perturbing the lower levels of metal). Excellent planarization of the gold films is achieved (less than 0.1 μm surface roughness, even starting with extreme topographic variations), as well as improved conductivity. To demonstrate the process, numerous planarized two-layer structures (transmission lines under a ground plane) were fabricated and characterized. 9 refs., 2 figs
Electronic self-organization in layered transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Ritschel, Tobias

2015-10-30

The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures
Use of weathered and fresh bottom ash mix layers as a subbase in road constructions: environmental behavior enhancement by means of a retaining barrier.

Science.gov (United States)

Del Valle-Zermeño, R; Chimenos, J M; Giró-Paloma, J; Formosa, J

2014-12-01

The presence of neoformed cement-like phases during the weathering of non-stabilized freshly quenched bottom ash favors the development of a bound pavement material with improved mechanical properties. Use of weathered and freshly quenched bottom ash mix layers placed one over the other allowed the retention of leached heavy metals and metalloids by means of a reactive percolation barrier. The addition of 50% of weathered bottom ash to the total subbase content diminished the release of toxic species to below environmental regulatory limits. The mechanisms of retention and the different processes and factors responsible of leaching strongly depended on the contaminant under concern as well as on the chemical and physical factors. Thus, the immediate reuse of freshly quenched bottom ash as a subbase material in road constructions is possible, as both the mechanical properties and long-term leachability are enhanced. Copyright © 2014 Elsevier Ltd. All rights reserved.
Effect of gold subsurface layer on the surface activity and segregation in Pt/Au/Pt{sub 3}M (where M = 3d transition metals) alloy catalyst from first-principles

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Eun [Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Global E3 Institute and Department of Materials Science and Engineering, Yonsei University, 120-749 Seoul (Korea, Republic of); Lim, Dong-Hee [Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Environmental Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 362-763 (Korea, Republic of); Jang, Jong Hyun; Kim, Hyoung Juhn; Yoon, Sung Pil; Han, Jonghee; Nam, Suk Woo [Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Hong, Seong-Ahn [Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Advanced Materials Chemistry, Korea University, Sejong-city 339-700 (Korea, Republic of); Soon, Aloysius, E-mail: aloysius.soon@yonsei.ac.kr, E-mail: hchahm@kist.re.kr [Global E3 Institute and Department of Materials Science and Engineering, Yonsei University, 120-749 Seoul (Korea, Republic of); Ham, Hyung Chul, E-mail: aloysius.soon@yonsei.ac.kr, E-mail: hchahm@kist.re.kr [Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Clean Energy and Chemical Engineering, University of Science and Technology (UST), 217 Gajungro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of)

2015-01-21

The effect of a subsurface hetero layer (thin gold) on the activity and stability of Pt skin surface in Pt{sub 3}M system (M = 3d transition metals) is investigated using the spin-polarized density functional theory calculation. First, we find that the heterometallic interaction between the Pt skin surface and the gold subsurface in Pt/Au/Pt{sub 3}M system can significantly modify the electronic structure of the Pt skin surface. In particular, the local density of states projected onto the d states of Pt skin surface near the Fermi level is drastically decreased compared to the Pt/Pt/Pt{sub 3}M case, leading to the reduction of the oxygen binding strength of the Pt skin surface. This modification is related to the increase of surface charge polarization of outmost Pt skin atoms by the electron transfer from the gold subsurface atoms. Furthermore, a subsurface gold layer is found to cast the energetic barrier to the segregation loss of metal atoms from the bulk (inside) region, which can enhance the durability of Pt{sub 3}M based catalytic system in oxygen reduction condition at fuel cell devices. This study highlights that a gold subsurface hetero layer can provide an additional mean to tune the surface activity toward oxygen species and in turn the oxygen reduction reaction, where the utilization of geometric strain already reaches its practical limit.
Deposition of very thin uniform indium sulfide layers over metallic nano-rods by the Spray-Ion Layer Gas Reaction method

Energy Technology Data Exchange (ETDEWEB)

Genduso, G. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Inguanta, R.; Sunseri, C.; Piazza, S. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Kelch, C.; Sáez-Araoz, R. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Zykov, A. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); present address: Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15,12489 Berlin (Germany); Fischer, Ch.-H., E-mail: fischer@helmholtz-berlin.de [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); second affiliation: Free University Berlin, Chemistry Institute, Takustr. 3, D-14195 Berlin (Germany)

2013-12-02

Very thin and uniform layers of indium sulfide were deposited on nickel nano-rods using the sequential and cyclical Spray-ILGAR® (Ion Layer Gas Reaction) technique. Substrates were fabricated by electrodeposition of Ni within the pores of polycarbonate membranes and subsequent chemical dissolution of the template. With respect to the depositions on flat substrates, experimental conditions were modified and optimized for the present geometry. Our results show that nano-rods up to a length of 10 μm were covered uniformly along their full length and with an almost constant film growth rate, thus allowing a good control of the coating thickness; the effect of the deposition temperature was also investigated. However, for high numbers of process steps, i.e. thickness, the films became uneven and crusty, especially at higher temperature, mainly owing to the simultaneous side reaction of the metallic Ni forming nickel sulfide at the surface of the rods. However, such a problem occurs only in the case of reactive nano-rod materials, such as less noble metals. It could be strongly reduced by doubling the spray step duration and thereby sealing the metallic surface before the process step of the sulfurization. Thus, quite smooth, about 100 nm thick coatings could be obtained. - Highlights: • Ni nano-rod substrates were grown within polycarbonate membranes. • We can coat nano-rods uniformly by the Ion Layer Gas Reaction method. • As a model we deposited up to about 100 nm In{sub 2}S{sub 3} on Ni nanorods (250 nm × 10 μm). • Element mapping at insulated rods showed homogenous coating over the full length. • Parameter optimization reduced effectively the Ni sulfide formation.
Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

Directory of Open Access Journals (Sweden)

Carvalho Luisa

2017-01-01

Full Text Available The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a ‘duplex structure’ with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.
Solid-state chelation of metal ions by ethylenediaminetetraacetate intercalated in a layered double hydroxide.

Science.gov (United States)

Tarasov, Konstantin A; O'Hare, Dermot; Isupov, Vitaly P

2003-03-24

The solid-state chelation of transition metal ions (Co(2+), Ni(2+), and Cu(2+)) from aqueous solutions into the lithium aluminum layered double hydroxide ([LiAl(2)(OH)(6)]Cl x 0.5H(2)O or LDH) which has been pre-intercalated with EDTA (ethylenediaminetetraacetate) ligand has been investigated. The intercalated metal cations form [M(edta)](2)(-) complexes between the LDH layers as indicated by elemental analysis, powder X-ray diffraction, and IR and UV-vis spectroscopies. If metal chloride or nitrate salts are used in the reaction with the LDH then co-intercalation of either the Cl(-) or NO(3)(-) anions is observed. In the case of metal acetate salts the cations intercalate without the accompanying anion. This can be explained by the different intercalation selectivity of the anions in relation to the LDH. In the latter case the introduction of the positive charge into LDH structure was compensated for by the release from the solid of the equivalent quantity of lithium and hydrogen cations. Time-resolved in-situ X-ray diffraction measurements have revealed that the chelation/intercalation reactions proceed very quickly. The rate of the reaction found for nickel acetate depends on concentration as approximately k[Ni(Ac)(2)](3).
Electron Tunneling in Junctions Doped with Semiconductors and Metals.

Science.gov (United States)

Bell, Lloyd Douglas, II

In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good
A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

Science.gov (United States)

Fu, Weixin; Nimura, Masatsugu; Kasahara, Takashi; Mimatsu, Hayata; Okada, Akiko; Shoji, Shuichi; Ishizuka, Shugo; Mizuno, Jun

2015-11-01

The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.
A stable organic-inorganic hybrid layer protected lithium metal anode for long-cycle lithium-oxygen batteries

Science.gov (United States)

Zhu, Jinhui; Yang, Jun; Zhou, Jingjing; Zhang, Tao; Li, Lei; Wang, Jiulin; Nuli, Yanna

2017-10-01

A stable organic-inorganic hybrid layer (OIHL) is direct fabricated on lithium metal surface by the interfacial reaction of lithium metal foil with 1-chlorodecane and oxygen/carbon dioxide mixed gas. This favorable OIHL is approximately 30 μm thick and consists of lithium alkyl carbonate and lithium chloride. The lithium-oxygen batteries with OIHL protected lithium metal anode exhibit longer cycle life (340 cycles) than those with bare lithium metal anode (50 cycles). This desirable performance can be ascribed to the robust OIHL which prevents the growth of lithium dendrites and the corrosion of lithium metal.
Wear resistance of WCp/Duplex Stainless Steel metal matrix composite layers prepared by laser melt injection

NARCIS (Netherlands)

Do Nascimento, A. M.; Ocelik, V.; Ierardi, M. C. F.; De Hosson, J. Th. M.

2008-01-01

Laser Melt Injection (LMI) was used to prepare metal matrix composite layers with a thickness of about 0.7 mm and approximately 10% volume fraction of WC particles in three kinds of Cast Duplex Stainless Steels (CDSSs). WC particles were injected into the molten surface layer using Nd:YAG high power
Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

Science.gov (United States)

Monajjemi, Majid

2014-11-01

A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene.
Layered Metal Hydroxides Containing Calcium and Their Structural Analysis

Energy Technology Data Exchange (ETDEWEB)

Kim, Tae Hyun; Heo, Il; Lee, Sung Han; Oh, Jae Min [College of Science and Technology, Yonsei University, Wonju (Korea, Republic of); Paek, Seung Min [Kyungpook National University, Daegu (Korea, Republic of); Park, Chung Berm; Choi, Ae Jin [National Institute of Horticultural and Herbal Science of R and D Eumseong (Korea, Republic of); Choy, Jin Ho [Ewha Womans University, Seoul (Korea, Republic of)

2012-06-15

Layered metal hydroxides (LMHs) containing calcium were synthesized by coprecipitation in solution having two different trivalent metal ions, iron and aluminum. Two mixed metal solutions (Ca{sup 2+}/Al{sup 3+} and Ca{sup 2+}/Fe{sup 3+} = 2/1) were added to sodium hydroxide solution and the final pH was adjusted to {approx}11.5 and {approx}13 for CaAl-and CaFe-LMHs. Powder X-ray diffraction (XRD) for the two LMH samples showed well developed (00l) diffractions indicating 2-dimensional crystal structure of the synthesized LMHs. Rietveld refinement of the X-ray diffraction pattern, the local structure analysis through X-ray absorption spectroscopy, and thermal analysis also confirmed that the synthesized precipitates show typical structure of LMHs. The chemical formulae, Ca{sub 2.04}Al{sub 1}(OH){sub 6}(NO{sub 3}){center_dot}5.25H{sub 2}O and Ca{sub 2.01}Fe{sub 1}(OH){sub 6}(NO{sub 3}){center_dot}4.75H{sub 2}O were determined by inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Particle morphology and thermal behavior for the synthesized LMHs were examined by field emission scanning electron microscopy and thermogravimetric differential scanning calorimetry
4-Amino-1,2,4-triazole: Playing a key role in the chemical deposition of Cu-In-Ga metal layers for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Berner, Ulrich, E-mail: ulrich.berner@de.bosch.com [Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Applied Research Chemistry (CR/ARC), Robert Bosch Platz 1, 70839 Gerlingen-Schillerhöhe (Germany); Physics and Materials Science Research Unit, Université du Luxembourg, 41, rue du Brill, L-4422 Belvaux (Luxembourg); Widenmeyer, Markus; Engler, Patrick [Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Applied Research Chemistry (CR/ARC), Robert Bosch Platz 1, 70839 Gerlingen-Schillerhöhe (Germany); Dale, Phillip J. [Physics and Materials Science Research Unit, Université du Luxembourg, 41, rue du Brill, L-4422 Belvaux (Luxembourg)

2015-05-01

Liquid film processing of Cu(In,Ga)Se{sub 2} absorber layers has the potential to lower the cell production costs significantly namely because of the absence of vacuum steps and high material utilization. In this work an ink system based on metal carboxylates in a mixture of a nitrogen-containing base and an alcohol is investigated. After the coating step on a suitable substrate followed by the drying of the alcohol, the metal ions are reduced to the respective metals with a simple heat treatment. However, depending on the conditions, the resulting metal layers are either highly porous or dewetting above 160 °C due to the high surface tension of the intermediate liquid indium. Adding 4-amino-1,2,4-triazole to the ink leads to a homogeneous metal layer, which is crucial for the formation of dense chalcopyrite layers. We propose a stabilization mechanism based on a temporary polymeric complex of Cu{sup 2+} and the additive 4-amino-1,2,4-triazole which is decomposing completely at selenization conditions. - Highlights: • Influence of 4-amino-1,2,4-triazole on the film formation has been investigated. • Two polymers identified forming an organic matrix during the layer processing • This matrix allows processing of dense and crack free metallic layers. • The polymers decompose completely under selenization conditions.
Influence of Surface Properties of Filtration-Layer Metal Oxide on Ceramic Membrane Fouling during Ultrafiltration of Oil/Water Emulsion.

Science.gov (United States)

Lu, Dongwei; Zhang, Tao; Gutierrez, Leo; Ma, Jun; Croué, Jean-Philippe

2016-05-03

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. A distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e., surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). Consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides is quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides toward oil droplets, consistent with the irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with the lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.
Influence of surface properties of filtration-layer metal oxide on ceramic membrane fouling during ultrafiltration of oil/water emulsion

KAUST Repository

Lu, Dongwei; Zhang, Tao; Gutierrez, Leo; Ma, Jun; Croue, Jean-Philippe

2016-01-01

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. Distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e. surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). In consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides are quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides towards oil droplets which consists very well with irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.
Influence of surface properties of filtration-layer metal oxide on ceramic membrane fouling during ultrafiltration of oil/water emulsion

KAUST Repository

Lu, Dongwei

2016-04-01

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. Distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e. surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). In consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides are quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides towards oil droplets which consists very well with irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.
Investigation of metallic, ceramic, and polymeric materials for engineered barrier applications in nuclear-waste packages

International Nuclear Information System (INIS)

Westerman, R.E.

1980-10-01

An effort to develop licensable engineered barrier systems for the long-term (about 1000 yr) containment of nuclear wastes under conditions of deep continental geologic disposal has been underway at Pacific Northwest Laboratory since January 1979, under the auspices of the High-Level Waste Immobilization Program. In the present work, the barrier system comprises the hard or structural elements of the package: the canister, the overpack(s), and the hole sleeve. A number of candidate metallic, ceramic, and polymeric materials were put through mechanical, corrosion, and leaching screening tests to determine their potential usefulness in barrier-system applications. Materials demonstrating adequate properties in the screening tests will be subjected to more detailed property tests, and, eventually, cost/benefit analyses, to determine their ultimate applicability to barrier-system design concepts. The following materials were investigated: two titanium alloys of Grade 2 and Grade 12; 300 and 400 series stainless steels, Inconels, Hastelloy C-276, titanium, Zircoloy, copper-nickel alloys and cast irons; total of 14 ceramic materials, including two grades of alumina, plus graphite and basalt; and polymers such as polyamide-imide, polyarylene, polyimide, polyolefin, polyphenylene sulfide, polysulfone, fluoropolymer, epoxy, furan, silicone, and ethylene-propylene terpolymer (EPDM) rubber. The most promising candidates for further study and potential use in engineered barrier systems were found to be rubber, filled polyphenylene sulfide, fluoropolymer, and furan derivatives

Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2015-01-01

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix
Conformal bi-layered perovskite/spinel coating on a metallic wire network for solid oxide fuel cells via an electrodeposition-based route

Science.gov (United States)

Park, Beom-Kyeong; Song, Rak-Hyun; Lee, Seung-Bok; Lim, Tak-Hyoung; Park, Seok-Joo; Jung, WooChul; Lee, Jong-Won

2017-04-01

Solid oxide fuel cells (SOFCs) require low-cost metallic components for current collection from electrodes as well as electrical connection between unit cells; however, the degradation of their electrical properties and surface stability associated with high-temperature oxidation is of great concern. It is thus important to develop protective conducting oxide coatings capable of mitigating the degradation of metallic components under SOFC operating conditions. Here, we report a conformal bi-layered coating composed of perovskite and spinel oxides on a metallic wire network fabricated by a facile electrodeposition-based route. A highly dense, crack-free, and adhesive bi-layered LaMnO3/Co3O4 coating of ∼1.2 μm thickness is conformally formed on the surfaces of wires with ∼100 μm diameter. We demonstrate that the bi-layered LaMnO3/Co3O4 coating plays a key role in improving the power density and durability of a tubular SOFC by stabilizing the surface of the metallic wire network used as a cathode current collector. The electrodeposition-based technique presented in this study offers a low-cost and scalable process to fabricate conformal multi-layered coatings on various metallic structures.
Graphene-based stretchable and transparent moisture barrier

Science.gov (United States)

Won, Sejeong; Van Lam, Do; Lee, Jin Young; Jung, Hyun-June; Hur, Min; Kim, Kwang-Seop; Lee, Hak-Joo; Kim, Jae-Hyun

2018-03-01

We propose an alumina-deposited double-layer graphene (2LG) as a transparent, scalable, and stretchable barrier against moisture; this barrier is indispensable for foldable or stretchable organic displays and electronics. Both the barrier property and stretchability were significantly enhanced through the introduction of 2LG between alumina and a polymeric substrate. 2LG with negligible polymeric residues was coated on the polymeric substrate via a scalable dry transfer method in a roll-to-roll manner; an alumina layer was deposited on the graphene via atomic layer deposition. The effect of the graphene layer on crack generation in the alumina layer was systematically studied under external strain using an in situ micro-tensile tester, and correlations between the deformation-induced defects and water vapor transmission rate were quantitatively analyzed. The enhanced stretchability of alumina-deposited 2LG originated from the interlayer sliding between the graphene layers, which resulted in the crack density of the alumina layer being reduced under external strain.
Densification of Ce0.9Gd0.1O1.95 barrier layer by in-situ solid state reaction

DEFF Research Database (Denmark)

Ni, De Wei; Esposito, Vincenzo

2014-01-01

A novel methodology, called in-situ solid state reaction (SSR), is developed and achieved for the densification of gadolinia doped ceria (CGO) barrier layer (BL) within the solid oxide fuel cell (SOFC) technology. The method is based on the combined use of impregnation technique and a designed two...
Chemical solution deposition method of fabricating highly aligned MgO templates

Science.gov (United States)

Paranthaman, Mariappan Parans [Knoxville, TN; Sathyamurthy, Srivatsan [Knoxville, TN; Aytug, Tolga [Knoxville, TN; Arendt, Paul N [Los Alamos, NM; Stan, Liliana [Los Alamos, NM; Foltyn, Stephen R [Los Alamos, NM

2012-01-03

A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
MOFwich: Sandwiched Metal-Organic Framework-Containing Mixed Matrix Composites for Chemical Warfare Agent Removal.

Science.gov (United States)

Peterson, Gregory W; Lu, Annie X; Hall, Morgan G; Browe, Matthew A; Tovar, Trenton; Epps, Thomas H

2018-02-28

This work describes a new strategy for fabricating mixed matrix composites containing layered metal-organic framework (MOF)/polymer films as functional barriers for chemical warfare agent protection. Through the use of mechanically robust polymers as the top and bottom encasing layers, a high-MOF-loading, high-performance-core layer can be sandwiched within. We term this multifunctional composite "MOFwich". We found that the use of elastomeric encasing layers enabled core layer reformation after breakage, an important feature for composites and membranes alike. The incorporation of MOFs into the core layer led to enhanced removal of chemical warfare agents while simultaneously promoting moisture vapor transport through the composite, showcasing the promise of these composites for protection applications.
Atomic-Resolution Visualization of Distinctive Chemical Mixing Behavior of Ni, Co and Mn with Li in Layered Lithium Transition-Metal Oxide Cathode Materials

Energy Technology Data Exchange (ETDEWEB)

Yan, Pengfei; Zheng, Jianming; Lv, Dongping; Wei, Yi; Zheng, Jiaxin; Wang, Zhiguo; Kuppan, Saravanan; Yu, Jianguo; Luo, Langli; Edwards, Danny J.; Olszta, Matthew J.; Amine, Khalil; Liu, Jun; Xiao, Jie; Pan, Feng; Chen, Guoying; Zhang, Jiguang; Wang, Chong M.

2015-07-06

Capacity and voltage fading of layer structured cathode based on lithium transition metal oxide is closely related to the lattice position and migration behavior of the transition metal ions. However, it is scarcely clear about the behavior of each of these transition metal ions. We report direct atomic resolution visualization of interatomic layer mixing of transition metal (Ni, Co, Mn) and lithium ions in layer structured oxide cathodes for lithium ion batteries. Using chemical imaging with aberration corrected scanning transmission electron microscope (STEM) and DFT calculations, we discovered that in the layered cathodes, Mn and Co tend to reside almost exclusively at the lattice site of transition metal (TM) layer in the structure or little interlayer mixing with Li. In contrast, Ni shows high degree of interlayer mixing with Li. The fraction of Ni ions reside in the Li layer followed a near linear dependence on total Ni concentration before reaching saturation. The observed distinctively different behavior of Ni with respect to Co and Mn provides new insights on both capacity and voltage fade in this class of cathode materials based on lithium and TM oxides, therefore providing scientific basis for selective tailoring of oxide cathode materials for enhanced performance.
Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

Science.gov (United States)

Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

2010-04-01

The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.
Contact of ZnSb thermoelectric material to metallic electrodes using S-Bond 400 solder alloy

DEFF Research Database (Denmark)

Malik, Safdar Abbas; Le, Thanh Hung; Van Nong, Ngo

2018-01-01

and metallic electrodes. In this paper, we investigate the joining of ZnSb to Ni and Ag electrodes using a commercial solder alloy S-Bond 400 and hot-pressing technique. Ti and Cr layers are also introduced as a diffusion barrier and microstructure at the interfaces is observed by scanning electron microscopy....... We found that S-bond 400 solder reacts with Ag and Ni electrodes to form different alloys at the interfaces. Cr layer was found to be broken after joining, resulting in a thicker reaction/diffusion layer at the interface, while Ti layer was preserved....
Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

OpenAIRE

Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

2017-01-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless st...
Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

Science.gov (United States)

Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

2016-01-07

Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.
TAMR effect in the tunneling through monocrystalline GaAs barriers; TAMR-Effekt beim Tunneln durch einkristalline GaAs-Barrieren

Energy Technology Data Exchange (ETDEWEB)

Lobenhofer, Michael

2013-01-28

Within the scope of this thesis the TAMR-effect in magnetic tunnel junctions with a single-crystalline GaAs-barrier was investigated. As ferromagnetic electrodes Fe-, FeCo- and FePt-layers were used. The measured TAMR-effect was investigated with respect to its behaviour towards changes in external Parameters, like the applied voltage, the temperature and the external magnetic field. The physical origin of the effect was attributed to the interaction of Rashba- and Dresselhaus-Spin-Orbit-coupling inside the tunnelling barrier and at the metal/semiconductor-interfaces.
Fabrication of High Gas Barrier Epoxy Nanocomposites: An Approach Based on Layered Silicate Functionalized by a Compatible and Reactive Modifier of Epoxy-Diamine Adduct

Directory of Open Access Journals (Sweden)

Ran Wei

2018-05-01

Full Text Available To solve the drawbacks of poor dispersion and weak interface in gas barrier nanocomposites, a novel epoxy-diamine adduct (DDA was synthesized by reacting epoxy monomer DGEBA with curing agent D400 to functionalize montmorillonite (MMT, which could provide complete compatibility and reactivity with a DGEBA/D400 epoxy matrix. Thereafter, sodium type montmorillonite (Na-MMT and organic-MMTs functionalized by DDA and polyether amines were incorporated with epoxy to manufacture nanocomposites. The effects of MMT functionalization on the morphology and gas barrier property of nanocomposites were evaluated. The results showed that DDA was successfully synthesized, terminating with epoxy and amine groups. By simulating the small-angle neutron scattering data with a sandwich structure model, the optimal dispersion/exfoliation of MMT was observed in a DDA-MMT/DGEBA nanocomposite with a mean radius of 751 Å, a layer thickness of 30.8 Å, and only two layers in each tactoid. Moreover, the DDA-MMT/DGEBA nanocomposite exhibited the best N2 barrier properties, which were about five times those of neat epoxy. Based on a modified Nielsen model, it was clarified that this excellent gas barrier property was due to the homogeneously dispersed lamellas with almost exfoliated structures. The improved morphology and barrier property confirmed the superiority of the adduct, which provides a general method for developing gas barrier nanocomposites.
Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

Energy Technology Data Exchange (ETDEWEB)

Freeman, H.D.; Romine, R.A.

1994-05-01

The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers.
Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

International Nuclear Information System (INIS)

Freeman, H.D.; Romine, R.A.

1994-05-01

The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers
Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

Energy Technology Data Exchange (ETDEWEB)

Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

2017-08-15

GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Metallization and biopatterning on ultra-flexible substrates via dextran sacrificial layers.

Directory of Open Access Journals (Sweden)

Peter Tseng

Full Text Available Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS layers (elastic moduli down to 3 kPa utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials.
Metallization and Biopatterning on Ultra-Flexible Substrates via Dextran Sacrificial Layers

Science.gov (United States)

Tseng, Peter; Pushkarsky, Ivan; Di Carlo, Dino

2014-01-01

Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS) layers (elastic moduli down to 3 kPa) utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself) were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios) curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials. PMID:25153326
Computer-aided study of key factors determining high mechanical properties of nanostructured surface layers in metal-ceramic composites

Science.gov (United States)

Konovalenko, Igor S.; Shilko, Evgeny V.; Ovcharenko, Vladimir E.; Psakhie, Sergey G.

2017-12-01

The paper presents the movable cellular automaton method. It is based on numerical models of surface layers of the metal-ceramic composite NiCr-TiC modified under electron beam irradiation in inert gas plasmas. The models take into account different geometric, concentration and mechanical parameters of ceramic and metallic components. The authors study the contributions of key structural factors in mechanical properties of surface layers and determine the ranges of their variations by providing the optimum balance of strength, strain hardening and fracture toughness.
Antimicrobial Peptides, Infections and the Skin Barrier

DEFF Research Database (Denmark)

Clausen, Maja Lisa; Agner, Tove

2016-01-01

The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis and trans......The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis...

Raising the shields: PCR in the presence of metallic surfaces protected by tailor-made coatings.

Science.gov (United States)

Scherag, Frank D; Brandstetter, Thomas; Rühe, Jürgen

2014-10-01

The implementation of PCR reactions in the presence of metallic surfaces is interesting for the generation of novel bioanalytical devices, because metals exhibit high mechanical stability, good thermal conductivity, and flexibility during deformation. However, metallic substrates are usually non-compatible with enzymatic reactions such as PCR due to poisoning of the active center of the enzyme or nonspecific adsorption of the enzymeto the metal surface, which could result in protein denaturation. We present a method for the generation of polymer coatings on metallic surfaces which are designed to minimize protein adsorption and also prevent the release of metal ions. These coatings consist of three layers covalently linked to each other; a self-assembled monolayer to promote adhesion, a photochemically generated barrier layer and a photochemically generated hydrogel. The coatings can be deposited onto aluminum, stainless steel, gold and copper surfaces. We compare PCR efficiencies in the presence of bare metallic surfaces with those of surfaces treated with the novel coating system. Copyright © 2014 Elsevier B.V. All rights reserved.
Two-dimensional optical simulation on a visible ray passing through inter-metal dielectric layers of CMOS image sensor device

International Nuclear Information System (INIS)

Lee, Wan-Gyu; Kim, Jun-Seok; Kim, Hee-Jeen; Kim, Sang-Young; Hwang, Sung-Bo; Lee, Jeong-Gun

2005-01-01

Two-dimensional optical simulation has been performed for investigating light propagation through a micro lens and inter-metal dielectric (IMD) layers in an Al and Cu back-end of line (BEOL) onto a Si photodiode, and its effects on the wave power, as well as optical carriers generated by a visible ray in the silicon substrate area, i.e. photodiode of a CMOS image sensor pixel. The number of optically generated carriers in an Al-BEOL has been compared to a Cu-BEOL. It is shown that more optical carriers are generated in the Cu-BEOL for the red color because a higher permittivity dielectric material like SiC is used in the Cu-BEOL to prevent Cu from diffusing into the dielectric material, resulting in higher optical loss in the higher- permittivity dielectric layers. Thus, the optical power density arriving in the silicon substrate is higher in the Al-BEOL than in the Cu-BEOL when the wavelength is blue (470 nm) or green (550 nm) in the visible ray spectrum. In conclusion, the structure of a Cu-BEOL in a CMOS image sensor has to be optimized for generating more optical carriers through lower-permittivity IMD materials or by reducing the permittivity difference between SiC (or SiN) and IMD materials, without deteriorating the capability as a barrier to Cu diffusion.
A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

Science.gov (United States)

Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

2017-11-01

In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.
Scratch test induced shear banding in high power laser remelted metallic glass layers

NARCIS (Netherlands)

Matthews, D. T. A.; Ocelik, V.; de Hosson, J. Th. M.

Laser remelted surface layers of a Cu-based metallic glass forming alloy have been produced with fully amorphous depths up to 350 mu m for single track widths of around 1.3 mm and have been checked by transmission of synchrotron radiation. They have been subjected to indentation hardness and scratch
Introduction of Nickel Coated Silicon Carbide Particles in Aluminum Metal Matrix Hardfaced by MIG/TIG Processes on Precoated Flux Layer

Directory of Open Access Journals (Sweden)

V. Kamburov

2018-03-01

Full Text Available The aim of the study was to investigate an aluminium metal matrix surface layer hardfaced by shielded gas metal arc welding processes applying either metal inert gas (MIG or tungsten inert gas (TIG, with standard wire filler onto the precoated flux layer - a baked resistant film containing electroless nickel coated micro/nano SiC particles. During baking, the components of the flux (MgCl2, NaCl, KCl and Na3AlF6 form a low melting eutectic, which: protects the hardfaced surface from oxidation, provides electrical conductance and keeps the particles on the surface during welding, as well as facilitates particles wettability and their interfacial bonding with the molten metal into the weld puddle.
Growth and electronic structure of single-layered transition metal dichalcogenides

DEFF Research Database (Denmark)

Dendzik, Maciej

2016-01-01

only a weak interaction between SL MoS2 and graphene, which leads to a quasi-freestanding band structure, but also to the coexistence of multiple rotational domains. Measurements of SL WS2 on Ag(111), on the other hand, reveals formation of interesting in-gap states which make WS2 metallic. Low...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host......-quality SL TMDCs. We demonstrate the synthesis of SL MoS2, WS2 and TaS2 on Au(111), Ag(111) and graphene on SiC. The morphology and crystal structure of the synthesized materials is characterized by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The electronic structure of SL...
Emerging Energy Applications of Two-Dimensional Layered Transition Metal Dichalcogenides

KAUST Repository

Li, Henan

2015-10-31

Transition metal dichalcogenides (TMDCs) have attracted significant attention for their great potential in nano energy. TMDC layered materials represent a diverse and largely untapped source of 2D systems. High-quality TMDC layers with an appropriate size, variable thickness, superior electronic and optical properties can be produced by the exfoliation or vapour phase deposition method. Semiconducting TMDC monolayers have been demonstrated feasible for various energy related applications, where their electronic properties and uniquely high surface areas offer opportunities for various applications such as nano generators, green electronics, electrocatalytic hydrogen generation and energy storage. In this review, we start from the structure, properties and preparation, followed by detailed discussions on the development of TMDC-based nano energy applications. Graphical abstract The structure characterizations and preparative methods of 2D TMDCs have obtained significant progresses. Their recent advances for nano energy generation, solar harvesting, conversion and storage, and green electronics are reviewed.
Modell experiments to determine the effect of inhibitive oxide layers on metals against hydrogen permeation

International Nuclear Information System (INIS)

Zink, U.

1983-11-01

The coupling of H 2 -permeation and corrosion has been examined with the high-temperature alloys Incoloy 800 and Incoloy 802. Permeationsrates as well as corrosionsrates have been measured simultanously under H 2 O-H 2 atmospheres in the test-facility HD-PERM. Test parameters have been temperature and oxidationpotential. Parabolic laws for the growth of the oxide scales have been identified and are considered to be highly important for the efficiency of a permeation barrier. A comparison between the temperature dependencies of corrosionsrates and H 2 -permeationsrates has revealed that permeation and corrosion are coupled only in so far that the permeation barrier is formed by the corrosion reaction. The corrosion data (parabolic rate constant, activation energy) of the oxide scales have given clear indications for the existence of a Cr 2 O 3 -layer, which is considered to be responsible for efficient oxide permeation barriers. (orig.) [de
Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.
Magnetic field dependence of the superconducting proximity effect in a two atomic layer thin metallic film

Energy Technology Data Exchange (ETDEWEB)

Caminale, Michael; Leon Vanegas, Augusto A.; Stepniak, Agnieszka; Oka, Hirofumi; Fischer, Jeison A.; Sander, Dirk; Kirschner, Juergen [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany)

2015-07-01

The intriguing possibility to induce superconductivity in a metal, in direct contact with a superconductor, is under renewed interest for applications and for fundamental aspects. The underlying phenomenon is commonly known as proximity effect. In this work we exploit the high spatial resolution of scanning tunneling spectroscopy at sub-K temperatures and in magnetic fields. We probe the differential conductance along a line from a superconducting 9 ML high Pb nanoisland into the surrounding two layer thin Pb/Ag wetting layer on a Si(111) substrate. A gap in the differential conductance indicates superconductivity of the Pb island. We observe an induced gap in the wetting layer, which decays with increasing distance from the Pb island. This proximity length is 21 nm at 0.38 K and 0 T. We find a non-trivial dependence of the proximity length on magnetic field. Surprisingly, we find that the magnetic field does not affect the induced superconductivity up to 0.3 T. However, larger fields of 0.6 T suppress superconductivity in the wetting layer, where the Pb island still remains superconducting. We discuss the unexpected robustness of induced superconductivity in view of the high electronic diffusivity in the metallic wetting layer.
Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Science.gov (United States)

Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2015-02-18

Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.
Outer brain barriers in rat and human development

DEFF Research Database (Denmark)

Brøchner, Christian B; Holst, Camilla Bjørnbak; Møllgård, Kjeld

2015-01-01

Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides...... diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6-21st weeks post...
Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

Directory of Open Access Journals (Sweden)

Khadijah M Emran

Full Text Available The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9and Fe49Co49V2 (VX50 (at.%, were studied using electrochemical techniques including electrochemical frequency modulation (EFM, electrochemical impedance spectroscopy (EIS and cyclic polarization (CP measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and atomic force microscopy (AFM. The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.
Numerical simulations of capillary barrier field tests

International Nuclear Information System (INIS)

Morris, C.E.; Stormont, J.C.

1997-01-01

Numerical simulations of two capillary barrier systems tested in the field were conducted to determine if an unsaturated flow model could accurately represent the observed results. The field data was collected from two 7-m long, 1.2-m thick capillary barriers built on a 10% grade that were being tested to investigate their ability to laterally divert water downslope. One system had a homogeneous fine layer, while the fine soil of the second barrier was layered to increase its ability to laterally divert infiltrating moisture. The barriers were subjected first to constant infiltration while minimizing evaporative losses and then were exposed to ambient conditions. The continuous infiltration period of the field tests for the two barrier systems was modelled to determine the ability of an existing code to accurately represent capillary barrier behavior embodied in these two designs. Differences between the field test and the model data were found, but in general the simulations appeared to adequately reproduce the response of the test systems. Accounting for moisture retention hysteresis in the layered system will potentially lead to more accurate modelling results and is likely to be important when developing reasonable predictions of capillary barrier behavior
Thin layer activation : on-line monitoring of metal loss in process plant

International Nuclear Information System (INIS)

Boulton, L.H.; Wallace, G.

1993-01-01

Corrosion, erosion and wear of metals is a common cause of failure in some process plant and equipment. Monitoring of these destructive effects has been done for many years to help plant engineers minimise the damage, in order to avoid unexpected failures and unscheduled shutdowns. Traditional methods of monitoring, such as standard NDT techniques, inform the engineer of what has happened, providing data such as culmulative loss of wall thickness. The modern approach to monitoring however, is to employ a technique which gives both current loss rates as well as integrated losses. Thin Layer Activation (TLA) provides on-line monitoring of corrosion, erosion and wear of metals, to a high degree of accuracy. It also gives cumulative information which can be backed up with weight-loss results if required. Thus current rather than historical loss rates are measured before any significant loss of metal has occurred. (author). 14 refs., 2 figs
Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

Science.gov (United States)

Waldbillig, D.; Kesler, O.

A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 °C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization.
Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

Energy Technology Data Exchange (ETDEWEB)

Waldbillig, D. [University of British Columbia, Department of Materials Engineering, 309-6350 Stores Road, Vancouver, BC (Canada); Kesler, O. [University of Toronto, Department of Mechanical and Industrial Engineering, 5 King' s College Road, Toronto, Ontario (Canada)

2009-06-15

A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization. (author)
Oxidation-Mediated Fingering in Liquid Metals

Science.gov (United States)

Eaker, Collin B.; Hight, David C.; O'Regan, John D.; Dickey, Michael D.; Daniels, Karen E.

2017-10-01

We identify and characterize a new class of fingering instabilities in liquid metals; these instabilities are unexpected due to the large interfacial tension of metals. Electrochemical oxidation lowers the effective interfacial tension of a gallium-based liquid metal alloy to values approaching zero, thereby inducing drastic shape changes, including the formation of fractals. The measured fractal dimension (D =1.3 ±0.05 ) places the instability in a different universality class than other fingering instabilities. By characterizing changes in morphology and dynamics as a function of droplet volume and applied electric potential, we identify the three main forces involved in this process: interfacial tension, gravity, and oxidative stress. Importantly, we find that electrochemical oxidation can generate compressive interfacial forces that oppose the tensile forces at a liquid interface. The surface oxide layer ultimately provides a physical and electrochemical barrier that halts the instabilities at larger positive potentials. Controlling the competition between interfacial tension and oxidative (compressive) stresses at the interface is important for the development of reconfigurable electronic, electromagnetic, and optical devices that take advantage of the metallic properties of liquid metals.
Metallated metal-organic frameworks

Energy Technology Data Exchange (ETDEWEB)

Bury, Wojciech; Farha, Omar K.; Hupp, Joseph T.; Mondloch, Joseph E.

2017-08-22

Porous metal-organic frameworks (MOFs) and metallated porous MOFs are provided. Also provided are methods of metallating porous MOFs using atomic layer deposition and methods of using the metallated MOFs as catalysts and in remediation applications.
Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

International Nuclear Information System (INIS)

Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

2012-01-01

A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

Irradiation of layered metallic dichalcogenides: disorder in the charge density waves

International Nuclear Information System (INIS)

Mutka, Hannu.

1983-01-01

This thesis is an experimental study on electron-irradiated metallic layer compounds (VSe 2 , NbSe 2 , TaS 2 , TaSe 2 ). The metal atoms displaced by irradiation remain in the form of stable defects up to 300 K; their concentration (10 - 5 ... 10 - 2 )is known from measurements of displacement threshold energy and magnetic susceptibility. The effect of these defects on the charge densite wave (CDW) phases and on the electronic and superconducting properties forms the major part of this study. In 1T-TaS 2 , a microstructure of CDW domains pinned to defects is observed by electron microscopy. The effects of this kind of disorder are also manifest in the thermodynamic properties of the CDW and in the electronic transport, as well as in the superconducting properties [fr
Optical Two Dimensional Fourier Transform Spectroscopy of Layered Metal Dichalcogenides

Science.gov (United States)

Dey, P.; Paul, J.; Stevens, C. E.; Kovalyuk, Z. D.; Kudrynskyi, Z. R.; Romero, A. H.; Cantarero, A.; Hilton, D. J.; Shan, J.; Karaiskaj, D.; Z. D. Kovalyuk; Z. R. Kudrynskyi Collaboration; A. H. Romero Collaboration; A. Cantarero Collaboration; D. J. Hilton Collaboration; J. Shan Collaboration

2015-03-01

Nonlinear two-dimensional Fourier transform (2DFT) measurements were used to study the mechanism of excitonic dephasing and probe the electronic structure of the excitonic ground state in layered metal dichalcogenides. Temperature-dependent 2DFT measurements were performed to probe exciton-phonon interactions. Excitation density dependent 2DFT measurements reveal exciton-exciton and exciton-carrier scattering, and the lower limit for the homogeneous linewidth of excitons on positively and negatively doped samples. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0012635.
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun

2014-04-28

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Hwang, Seon Yong; Jung, Ho Yong [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jeong, Jun-Ho [Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials, Yuseong-gu Daejeon, 305-343 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.k [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

2009-05-29

Polymer films are widely used as a substrate for displays and for solar cells since they are cheap, transparent and flexible, and their material properties are easy to design. Polyethylene-terephthalate (PET) is especially useful for various applications requiring transparency, flexibility and good thermal and chemical resistance. In this study, nano-sized metal patterns were fabricated on flexible PET film by using nanoimprint lithography (NIL). Water-soluble poly-vinyl alcohol (PVA) resin was used as a planarization and sacrificial layer for the lift-off process, as it does not damage the PET films and can easily be etched off by using oxygen plasma. NIL was used to fabricate the nano-sized patterns on the non-planar or flexible substrate. Finally, a nano-sized metal pattern was successfully formed by depositing the metal layer over the imprinted resist patterns and applying the lift-off process, which is economic and environmentally friendly, to the PET films.
Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

2014-02-25

Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.
On mechanism of metals modifying

International Nuclear Information System (INIS)

Chernov, V.S.; Busol, F.I.

1975-01-01

Data from the literature are cited to show that in several cases, the mechanism of modification of metals and alloys by additives soluble in the melt cannot be explained by the adsorption hypothesis based on the surface activity of these additives. It is suggested that the mechanism of modification by soluble additives can be explained by the presence of a layer of liquid enriched (or depleted) in the additives preceding the crystallization front (densification by concentration), formed under actual conditions of crystallization as a result of the different solubilities of the additive in the solid and liquid phases of the base metal, regardless of its surface activity. This densification by concentration leads to the inhibition of crystal growth in the base metal (barrier action) and to concentration overcooling. On the basis of this theory it is suggested that the modifying action of additives can be predicted from some parameters of the phase diagrams. (author)
Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan

2014-11-10

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).
Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

2014-01-01

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).
Pervious concrete reactive barrier for removal of heavy metals from acid mine drainage − column study

International Nuclear Information System (INIS)

Shabalala, Ayanda N.; Ekolu, Stephen O.; Diop, Souleymane; Solomon, Fitsum

2017-01-01

Highlights: • Pervious concrete raises the low pH of acid mine drainage up to 12; heavy metals precipitate. • Pervious concrete successfully removed greater than 99% of inorganic contaminants. • Ca(OH)_2 in pervious concrete reacts with SO_4"2"− in acid mine drainage to form expansive gypsum. • Incorporating fly ash into pervious concrete mitigates damage caused by gypsum. • Pervious concrete reactive barrier offers a promising alternative method for treatment of acid mine drainage. - Abstract: This paper presents a column study conducted to investigate the potential use of pervious concrete as a reactive barrier for treatment of water impacted by mine waste. The study was done using acid mine drainage (AMD) collected from a gold mine (WZ) and a coalfield (TDB). Pervious concrete mixtures consisting of Portland cement CEM I 52.5R with or without 30% fly ash (FA) were prepared at a water-cementitious ratio of 0.27 then used to make cubes which were employed in the reactor columns. It was found that the removal efficiency levels of Al, Fe, Mn, Co and Ni were 75%, 98%, 99%, 94% and 95% for WZ; 87%, 96%, 99%, 98% and 90% for TDB, respectively. The high rate of acid reduction and metal removal by pervious concrete is attributed to dissolution of portlandite which is a typical constituent of concrete. The dominant reaction product in all four columns was gypsum, which also contributed to some removal of sulphate from AMD. Formation of gypsum, goethite, and Glauber’s salt were identified. Precipitation of metal hydroxides seems to be the dominant metal removal mechanism. Use of pervious concrete offers a promising alternative treatment method for polluted or acidic mine water.
Pervious concrete reactive barrier for removal of heavy metals from acid mine drainage − column study

Energy Technology Data Exchange (ETDEWEB)

Shabalala, Ayanda N., E-mail: Ayanda.Shabalala@ump.ac.za [University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Ekolu, Stephen O. [University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa); Diop, Souleymane [Council for Geoscience, Private bag x112, Pretoria, 0001 (South Africa); Solomon, Fitsum [University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)

2017-02-05

Highlights: • Pervious concrete raises the low pH of acid mine drainage up to 12; heavy metals precipitate. • Pervious concrete successfully removed greater than 99% of inorganic contaminants. • Ca(OH){sub 2} in pervious concrete reacts with SO{sub 4}{sup 2−} in acid mine drainage to form expansive gypsum. • Incorporating fly ash into pervious concrete mitigates damage caused by gypsum. • Pervious concrete reactive barrier offers a promising alternative method for treatment of acid mine drainage. - Abstract: This paper presents a column study conducted to investigate the potential use of pervious concrete as a reactive barrier for treatment of water impacted by mine waste. The study was done using acid mine drainage (AMD) collected from a gold mine (WZ) and a coalfield (TDB). Pervious concrete mixtures consisting of Portland cement CEM I 52.5R with or without 30% fly ash (FA) were prepared at a water-cementitious ratio of 0.27 then used to make cubes which were employed in the reactor columns. It was found that the removal efficiency levels of Al, Fe, Mn, Co and Ni were 75%, 98%, 99%, 94% and 95% for WZ; 87%, 96%, 99%, 98% and 90% for TDB, respectively. The high rate of acid reduction and metal removal by pervious concrete is attributed to dissolution of portlandite which is a typical constituent of concrete. The dominant reaction product in all four columns was gypsum, which also contributed to some removal of sulphate from AMD. Formation of gypsum, goethite, and Glauber’s salt were identified. Precipitation of metal hydroxides seems to be the dominant metal removal mechanism. Use of pervious concrete offers a promising alternative treatment method for polluted or acidic mine water.
Thermal diffusivity of a metallic thin layer using the time-domain thermo reflectance technique

International Nuclear Information System (INIS)

Battaglia, J-L; Kusiak, A; Rossignol, C; Chigarev, N

2007-01-01

The time domain thermo reflectance (TDTR) is widely used in the field of acoustic and thermal characterization of thin layers at the nano and micro scale. In this paper, we propose to derive a simple analytical expression of the thermal diffusivity of the layer. This relation is based on the analytical solution of one-dimensional heat transfer in the medium using integral transforms. For metals, the two-temperature model shows that the capacitance effect at the short times is essentially governed by the electronic contribution
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

International Nuclear Information System (INIS)

Hahn, Herwig; Reuters, Ben; Wille, Ada; Ketteniss, Nico; Kalisch, Holger; Vescan, Andrei; Benkhelifa, Fouad; Ambacher, Oliver

2012-01-01

One current focus of research is the realization of GaN-based enhancement-mode devices. A novel approach for the realization of enhancement-mode behaviour is the utilization of polarization matching between the barrier and the GaN buffer. Yet, the utilization of a quaternary barrier combining polarization engineering together with a large conduction band offset has not been demonstrated so far. Here, epitaxially grown, compressively strained AlInGaN is applied as a nearly polarization-matched barrier layer on GaN resulting in enhancement-mode operation. The insulated-gate devices are fabricated gate-first with Al 2 O 3 as gate dielectric. Passivated metal insulator semiconductor heterostructure field effect transistors yielded threshold voltages (V th ) of up to +1 V. The devices withstand negative and positive gate-biased stress and a positive V th is maintained even after long-time negative bias stress. (paper)
Microstructures and properties of ceramic particle-reinforced metal matrix composite layers produced by laser cladding

Science.gov (United States)

Zhang, Qingmao; He, Jingjiang; Liu, Wenjin; Zhong, Minlin

2005-01-01

Different weight ratio of titanium, zirconium, WC and Fe-based alloy powders were mixed, and cladded onto a medium carbon steel substrate using a 3kW continuous wave CO2 laser, aiming at producing Ceramic particles- reinforced metal matrix composites (MMCs) layers. The microstructures of the layers are typical hypoeutectic, and the major phases are Ni3Si2, TiSi2, Fe3C, FeNi, MC, Fe7Mo3, Fe3B, γ(residual austenite) and M(martensite). The microstructure morphologies of MMCs layers are dendrites/cells. The MC-type reinforcements are in situ synthesis Carbides which main compositions consist of transition elements Zr, Ti, W. The MC-type particles distributed within dendrite and interdendritic regions with different volume fractions for single and overlapping clad layers. The MMCs layers are dense and free of cracks with a good metallurgical bonding between the layer and substrate. The addition ratio of WC in the mixtures has the remarkable effect on the microhardness of clad layers.
Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

International Nuclear Information System (INIS)

Mamor, M

2009-01-01

The barrier heights (BH) of various metals including Pd, Pt and Ni on n-type GaN (M/n-GaN) have been measured in the temperature range 80-400 K with using a current-voltage (I-V) technique. The temperature dependence of the I-V characteristics of M/n-GaN have shown non-ideal behaviors and indicate the presence of a non-uniform distribution of surface gap states, resulting from the residual defects in the as grown GaN. The surface gap states density N ss , as well as its temperature dependence were obtained from the bias and temperature dependence of the ideality factor n(V,T) and the barrier height Φ Bn (V,T). Further, a dependence of zero-bias BH Φ 0Bn on the metal work function (Φ m ) with an interface parameter coefficient of proportionality of 0.47 is found. This result indicates that the Fermi level at the M/n-GaN interface is unpinned. Additionally, the presence of lateral inhomogeneities of the BH, with two Gaussian distributions of the BH values is seen. However, the non-homogeneous SBH is found to be correlated to the surface gap states density, in that Φ 0Bn becomes smaller with increasing N ss . These findings suggest that the lateral inhomogeneity of the SBH is connected to the non-uniform distribution of the density of surface gap states at metal/GaN which is attributed to the presence of native defects in the as grown GaN. Deep level transient spectroscopy confirms the presence of native defects with discrete energy levels at GaN and provides support to this interpretation.
Optical properties of hybrid semiconductor-metal structures

Energy Technology Data Exchange (ETDEWEB)

Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

2012-07-01

We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.
Aluminium oxide barrier films on polymeric web and their conversion for packaging applications

OpenAIRE

Struller, CF; Kelly, PJ; Copeland, NJ; Tobin, V; Assender, HE; Holliday, CW; Read, SJ

2013-01-01

In recent years, inorganic transparent barrier layers such as aluminium oxide or silicon oxide deposited onto polymer films have emerged as an attractive alternative to polymer based transparent barrier layers for flexible food packaging materials. For this application, barrier properties against water vapour and oxygen are critical. Aluminium oxide coatings can provide good barrier levels at thicknesses in the nanometre range, compared to several micrometres for polymer-based barrier layers....
Double-layered metal grating for high-performance refractive index sensing.

Science.gov (United States)

Li, Guozhen; Shen, Yang; Xiao, Guohui; Jin, Chongjun

2015-04-06

The detection of minuscule changes in the local refractive index by localized surface plasmon resonances (LSPRs), carried by metal nanostructures, has been used successfully in applications such as real-time and label-free detection of molecular binding events. However, localized plasmons demonstrate 1-2 orders of magnitude lower figure of merit (FOM) compared with their propagating counterparts. Here, we propose and experimentally demonstrate a high-performance refractive index sensor based on a structure of double-layered metal grating (DMG) with an FOM and FOM* reaching 38 and 40 respectively under normal incidence. Such a high FOM and FOM* arise from a result of a sharp fano resonance, which is caused by the coherent interference between the LSPR from the individual top gold stripes and Wood's anomaly (WA). Moreover, a small conformal decay length of ~68 nm is determined in DMG, indicating that the DMG is a promising candidate for label-free biomedical sensing.
Field study plan for alternate barriers

International Nuclear Information System (INIS)

Freeman, H.D.; Gee, G.W.; Relyea, J.F.

1989-05-01

Pacific Northwest Laboratory (PNL) is providing technical assistance in selecting, designing, evaluating, and demonstrating protective barriers. As part of this technical assistance effort, asphalt, clay, and chemical grout will be evaluated for use as alternate barriers. The purpose of the subsurface layer is to reduce the likelihood that extreme events (i.e., 100-year maximum storms, etc.) will cause significant drainage through the barrier. The tests on alternate barriers will include laboratory and field analysis of the subsurface layer performance. This field test plan outlines the activities required to test and design subsurface moisture barriers. The test plan covers activities completed in FY 1988 and planned through FY 1992 and includes a field-scale test of one or more of the alternate barriers to demonstrate full-scale application techniques and to provide performance data on a larger scale. Tests on asphalt, clay, and chemical grout were initiated in FY 1988 in small (30.5 cm diameter) tube-layer lysimeters. The parameters used for testing the materials were different for each one. The tests had to take into account the differences in material characteristics and response to change in conditions, as well as information provided by previous studies. 33 refs., 8 figs., 1 tab
Organic substrates as electron donors in permeable reactive barriers for removal of heavy metals from acid mine drainage.

Science.gov (United States)

Kijjanapanich, P; Pakdeerattanamint, K; Lens, P N L; Annachhatre, A P

2012-12-01

This research was conducted to select suitable natural organic substrates as potential carbon sources for use as electron donors for biological sulphate reduction in a permeable reactive barrier (PRB). A number of organic substrates were assessed through batch and continuous column experiments under anaerobic conditions with acid mine drainage (AMD) obtained from an abandoned lignite coal mine. To keep the heavy metal concentration at a constant level, the AMD was supplemented with heavy metals whenever necessary. Under anaerobic conditions, sulphate-reducing bacteria (SRB) converted sulphate into sulphide using the organic substrates as electron donors. The sulphide that was generated precipitated heavy metals as metal sulphides. Organic substrates, which yielded the highest sulphate reduction in batch tests, were selected for continuous column experiments which lasted over 200 days. A mixture of pig-farm wastewater treatment sludge, rice husk and coconut husk chips yielded the best heavy metal (Fe, Cu, Zn and Mn) removal efficiencies of over 90%.
Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-03-01

In this work, versatile CdS/Cu 2 ZnSnS 4 (CZTS) solar cell designs based on intermediate metallic sub-layers (Au, Ti, and Ag) engineering are proposed for enhancing light-scattering behavior and reducing recombination losses. The idea behind this work is to generate optical confinement regions in the CZTS absorber layer to achieve an improved absorption and appropriate antireflection effects. Moreover, the ultra-thin metal at the CZTS/Mo interface can be helpful for reducing the series resistance, where it behaves like a blocking layer for the Sulfur diffusion. We further combine the proposed designs with Particle Swarm Optimization (PSO)-based approach to achieve broadband absorption and boost the conversion efficiency. It is found that the optimized design with Ti sub-layer improves the CZTS solar cell properties, where it yields 31% improvement in short-circuit current and 60% in the power efficiency over the conventional one. Therefore, the optimized designs provide the opportunity for bridging the gap between improving the optical behavior and reducing the recombination losses.

Influence of the civil construction debris layer in heavy metals removal of the leachate submitted to recirculation in landfill

Directory of Open Access Journals (Sweden)

Maike Rossmann

2010-08-01

Full Text Available Little is known about the ability of stabilized organic matter (old MSW and construction waste (RCC to retain heavy metals from leachate generated in landfills. The objective of this study was to assess the potential of MSW to remove old heavy metals in MSW leachate produced by freshly collected, and the effect of RCC in the concentration of heavy metals in effluents from MSW old. In three columns (CR, put a layer of RCC and then MSW old and, on the other three (SR, only MSW old. Analyzed in the leachate and effluent pH, EC, BOD and metals Zn, Cd, Cu and Pb. There were similar and efficient removal of BOD and heavy metals in both treatments. The presence of the layer of RCC was considered important to the overall improvement in effluent quality, but did not influence the concentration of metals in the effluent. The order of retention of metals in the columns was: Cu ~ Pb> Cd> Zn. With the exception of Cd and Zn, all other variables assessed in the effluent were below the maximum standards set in DN 01.08 COPAM / CERH for release effluent into water bodies.
Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

Science.gov (United States)

Tempas, Christopher D.

Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.
Mechanical Properties of Layered La2Zr2O7 Thermal Barrier Coatings

Science.gov (United States)

Guo, Xingye; Li, Li; Park, Hyeon-Myeong; Knapp, James; Jung, Yeon-Gil; Zhang, Jing

2018-04-01

Lanthanum zirconate (La2Zr2O7) has been proposed as a promising thermal barrier coating (TBC) material due to its low thermal conductivity and high stability at high temperatures. In this work, both single and double-ceramic-layer (DCL) TBC systems of La2Zr2O7 and 8 wt.% yttria-stabilized zirconia (8YSZ) were prepared using air plasma spray (APS) technique. The thermomechanical properties and microstructure were investigated. Thermal gradient mechanical fatigue (TGMF) tests were applied to investigate the thermal cycling performance. The results showed that DCL La2Zr2O7 + 8YSZ TBC samples lasted fewer cycles compared with single-layered 8YSZ TBC samples in TGMF tests. This is because DCL La2Zr2O7 TBC samples had higher residual stress during the thermal cycling process, and their fracture toughness was lower than that of 8YSZ. Bond strength test results showed that 8YSZ TBC samples had higher bond strength compared with La2Zr2O7. The erosion rate of La2Zr2O7 TBC samples was higher than that of 8YSZ samples, due to the lower critical erodent velocity and fracture toughness of La2Zr2O7. DCL porous 8YSZ + La2Zr2O7 had a lower erosion rate than other SCL and DCL La2Zr2O7 coatings, suggesting that porous 8YSZ serves as a stress-relief buffer layer.
Influence of plasma pressure gradient on melt layer macroscopic erosion of metal targets in disruption simulation experiments

Energy Technology Data Exchange (ETDEWEB)

Tereshin, V.I.; Garkusha, I.E. E-mail: garkusha@ipp.kharkov.ua; Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Makhlaj, V.A.; Solyakov, D.G.; Wuerz, H

2003-03-01

Melt layer erosion of metal targets under pulsed high heat loads is discussed. Tungsten, copper, aluminum, and titanium targets were exposed to perpendicular and inclined plasma impact in the quasi-steady-state plasma accelerator QSPA Kh-50. Melt layer motion results in erosion crater formation with rather large mountains of the resolidified material at the crater edge. It is shown that macroscopic motion of the melt layer and surface cracking are the main factors responsible for tungsten erosion.
Influence of plasma pressure gradient on melt layer macroscopic erosion of metal targets in disruption simulation experiments

International Nuclear Information System (INIS)

Tereshin, V.I.; Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Chebotarev, V.V.; Makhlaj, V.A.; Solyakov, D.G.; Wuerz, H.

2003-01-01

Melt layer erosion of metal targets under pulsed high heat loads is discussed. Tungsten, copper, aluminum, and titanium targets were exposed to perpendicular and inclined plasma impact in the quasi-steady-state plasma accelerator QSPA Kh-50. Melt layer motion results in erosion crater formation with rather large mountains of the resolidified material at the crater edge. It is shown that macroscopic motion of the melt layer and surface cracking are the main factors responsible for tungsten erosion
Barrier mechanisms in the Drosophila blood-brain barrier.

Science.gov (United States)

Hindle, Samantha J; Bainton, Roland J

2014-01-01

The invertebrate blood-brain barrier (BBB) field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through G-protein coupled receptor signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate BBB has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many BBB mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the BBB can govern whole animal physiologies. This includes novel functions of BBB gap junctions in orchestrating synchronized neuroblast proliferation, and of BBB secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate BBB anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.
Gold work function reduction by 2.2 eV with an air-stable molecular donor layer

Energy Technology Data Exchange (ETDEWEB)

Broeker, Benjamin; Blum, Ralf-Peter; Frisch, Johannes; Rabe, Juergen P.; Koch, Norbert [Institut fuer Physik, Humboldt-Universitaet zu Berlin (Germany); Vollmer, Antje [Berliner Elektronenspeicherring-Gesellschaft fuer Synchrotronstrahlung mbH, Berlin (Germany); Hofmann, Oliver T.; Zojer, Egbert [Institut of Solid State Physics, Graz University of Technology (Austria); Rieger, Ralph; Muellen, Klaus [Max Planck Institut fuer Polymerforschung, Mainz (Germany)

2009-07-01

Ultraviolet photoelectron spectroscopy was used to investigate neutral methyl viologen (1,1'-dimethyl-1H,1'H-[4,4']bipyridinylidene, MV0) deposited on Au(111) surfaces. As a result of molecule-to-metal electron transfer, the work function of Au(111) was decreased from 5.5 eV to 3.3 eV. The energy levels of electron transport layers deposited on top of modified Au surfaces were shifted to higher binding energy compared to layers on pristine Au, and the electron injection barrier was reduced by 0.8 eV for tris(8-hydroxyquinoline)aluminum (Alq3) and by 0.7 eV for C60. The air-stable donor MV0 can thus be used to facilitate electron injection into organic semiconductors even from high work function metals.
Transient heat transfer phenomena of the liquid metal layer cooled by overlying R113 coolant

International Nuclear Information System (INIS)

Cho, J. S.; Seo, K. R.; Jung, C. H.; Park, R. J.; Kim, S. B.

1999-01-01

To understand the fundamental relationship of the natural convection heat transfer in the molten metal pool and the boiling mechanism of the overlying coolant, experiments were performed for the transient heat transfer of the liquid metal pool with overlying R113 coolant with boiling. The simulant molten pool material is tin (Sn) with the melting temperature of 232 deg C. The metal pool is heated from the bottom surface and the coolant is injected onto the molten metal pool. Tests were conducted by changing the bottom surface boundary condition. The bottom heating condition was varied from 8kW to 14kW. As a result the boiling mechanism of the R113 coolant is changed from the nuclear boiling to film boiling. The Nusselt number and the Rayleigh number in the molten metal pool region obtained as functions of time. Analysis was made for the relationship between the heat flux and the temperature difference of the metal layer surface temperature and the boiling coolant bulk temperature
Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

International Nuclear Information System (INIS)

Selig, S; Westig, M P; Jacobs, K; Honingh, C E

2014-01-01

In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.
Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

DEFF Research Database (Denmark)

Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

2007-01-01

In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....
Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

Energy Technology Data Exchange (ETDEWEB)

Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

2015-08-15

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)
Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

International Nuclear Information System (INIS)

Pal, Debdas; Hoag, David; Barter, Margaret

2012-01-01

Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)
Characteristics of laser ultrasound interaction with multi-layered dissimilar metals adhesive interface by numerical simulation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Kuanshuang, E-mail: zkuanshuang@buaa.edu.cn [School of Mechanical Engineering and Automation, BeiHang University, Beijing 100191 (China); Collaborative Innovation Center of Advanced Aero-Engine, Beijing 100191 (China); Zhou, Zhenggan; Zhou, Jianghua; Sun, Guangkai [School of Mechanical Engineering and Automation, BeiHang University, Beijing 100191 (China); Collaborative Innovation Center of Advanced Aero-Engine, Beijing 100191 (China)

2015-10-30

Highlights: • We investigate laser generated ultrasound in multi-layered adhesive structure. • We find the difference of waveforms with different probe points. • Probe points and frequency range influence characterization of the damage interface. • Reflection coefficients of longitudinal waves can quantify the void defect. - Abstract: The characteristics of laser-generated ultrasonic wave interaction with multi-layered dissimilar metals adhesive interface are investigated by finite element method (FEM). The physical model of laser-generated ultrasonic wave in the multi-layered dissimilar metals adhesive structure is built. The surface temperature evolution with different laser power densities is analyzed to obtain the parameters of pulsed laser with thermoelastic regime. The differences of laser ultrasonic waves with different center frequencies measured at the center of laser irradiation would verify the interfacial features of adhesive structures. The optimum frequency range and probe point would be beneficial for the detection of the small void defect. The numerical results indicate that the different frequency range and probe points would evidently influence the identification and quantitative characterization of the small void defect. The research findings would lay a foundation for testing interfacial integrity.
Characteristics of laser ultrasound interaction with multi-layered dissimilar metals adhesive interface by numerical simulation

International Nuclear Information System (INIS)

Zhang, Kuanshuang; Zhou, Zhenggan; Zhou, Jianghua; Sun, Guangkai

2015-01-01

Highlights: • We investigate laser generated ultrasound in multi-layered adhesive structure. • We find the difference of waveforms with different probe points. • Probe points and frequency range influence characterization of the damage interface. • Reflection coefficients of longitudinal waves can quantify the void defect. - Abstract: The characteristics of laser-generated ultrasonic wave interaction with multi-layered dissimilar metals adhesive interface are investigated by finite element method (FEM). The physical model of laser-generated ultrasonic wave in the multi-layered dissimilar metals adhesive structure is built. The surface temperature evolution with different laser power densities is analyzed to obtain the parameters of pulsed laser with thermoelastic regime. The differences of laser ultrasonic waves with different center frequencies measured at the center of laser irradiation would verify the interfacial features of adhesive structures. The optimum frequency range and probe point would be beneficial for the detection of the small void defect. The numerical results indicate that the different frequency range and probe points would evidently influence the identification and quantitative characterization of the small void defect. The research findings would lay a foundation for testing interfacial integrity.
Schottky Barriers in Bilayer Phosphorene Transistors.

Science.gov (United States)

Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

2017-04-12

It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.
Filamentary and diffuse barrier discharges

International Nuclear Information System (INIS)

Kogelschatz, U.

2001-01-01

Barrier discharges, sometimes also referred to as dielectric-barrier discharges or silent discharges, are characterized by the presence of at least one insulating layer in contact with the discharge between two planar or cylindrical electrodes connected to an ac power supply. The main advantage of this type of electrical discharge is, that non-equilibrium plasma conditions in atmospheric-pressure gases can be established in an economic and reliable way. This has led to a number of important applications including industrial ozone generation, surface modification of polymers, plasma chemical vapor deposition, excitation of CO 2 lasers, excimer lamps and, most recently, large-area flat plasma display panels. Depending on the application, the width of the discharge gap can range from less than 0.1 mm to about 100 mm and the applied frequency from below line frequency to several gigahertz. Typical materials used for the insulating layer (dielectric barrier) are glass, quartz, ceramics but also thin enamel or polymer layers
Combined effect of capillary barrier and layered slope on water, solute and nanoparticle transfer in an unsaturated soil at lysimeter scale.

Science.gov (United States)

Prédélus, Dieuseul; Coutinho, Artur Paiva; Lassabatere, Laurent; Bien, Le Binh; Winiarski, Thierry; Angulo-Jaramillo, Rafael

2015-10-01

It is well recognized that colloidal nanoparticles are highly mobile in soils and can facilitate the transport of contaminants through the vadose zone. This work presents the combined effect of the capillary barrier and soil layer slope on the transport of water, bromide and nanoparticles through an unsaturated soil. Experiments were performed in a lysimeter (1×1×1.6m(3)) called LUGH (Lysimeter for Urban Groundwater Hydrology). The LUGH has 15 outputs that identify the temporal and spatial evolution of water flow, solute flux and nanoparticles in relation to the soil surface conditions and the 3D system configuration. Two different soil structures were set up in the lysimeter. The first structure comprises a layer of sand (0-0.2cm, in diameter) 35cm thick placed horizontally above a layer of bimodal mixture also 35cm thick to create a capillary barrier at the interface between the sand and bimodal material. The bimodal material is composed of a mixture 50% by weight of sand and gravel (0.4-1.1cm, in diameter). The second structure, using the same amount of sand and bimodal mixture as the first structure represents an interface with a 25% slope. A 3D numerical model based on Richards equation for flow and the convection dispersion equations coupled with a mechanical module for nanoparticle trapping was developed. The results showed that under the effect of the capillary barrier, water accumulated at the interface of the two materials. The sloped structure deflects flow in contrast to the structure with zero slope. Approximately 80% of nanoparticles are retained in the lysimeter, with a greater retention at the interface of two materials. Finally, the model makes a good reproduction of physical mechanisms observed and appears to be a useful tool for identifying key processes leading to a better understanding of the effect of capillary barrier on nanoparticle transfer in an unsaturated heterogeneous soil. Copyright © 2015 Elsevier B.V. All rights reserved.
Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown
Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells

International Nuclear Information System (INIS)

Basit, Muhammad Abdul; Abbas, Muhammad Awais; Bang, Jin Ho; Park, Tae Joo

2015-01-01

In 2 S 3 interfacial recombination barrier layer (IBL) via successive ionic layer adsorption and reaction (SILAR) was successfully employed between PbS quantum dots and mesoporous TiO 2 in quantum-dot-sensitized solar cells (QDSSCs). In 2 S 3 IBL significantly increased the resistance against back electron transfer from TiO 2 , resulting an increment in the photocurrent density (J SC ) for the cell with single SILAR cycle of In 2 S 3 IBL. Further increase in the number of SILAR cycles of In 2 S 3 IBL deteriorated the J SC , whereas open-circuit voltage sustained the increasing trend. Therefore, an optimal photo-conversion efficiency of ∼2.2% was obtained for the cell with 2 SILAR cycles of In 2 S 3 IBL, which strategically reached a value of ∼2.70% after annealing (increased by 40% compared to the control cell without IBL). In 2 S 3 IBL not only improved the recombination resistance and electron life time of the cells, but it also enhanced the photostability of the cells. - Highlights: • In 2 S 3 interfacial recombination barrier layer was deposited on TiO 2 photoanode via SILAR process. • Resistance against back electron transfer from TiO 2 (recombination) increased notably. • Fabricated PbS-QDSSCs were characterized using IPCE, OCVD and EIS techniques. • In 2 S 3 IBL improved chemical capacitance, electron life time and photostability of modified cells. • 2In 2 S 3 IBL showed optimal performance, yielding 40% improvement in PCE after heat treatment.
Heavy Metals Technogenic Pollution of Plough Lands Arable Layer in the Chelyabinsk Region

Science.gov (United States)

Mantorova, G. F.

2017-11-01

Environmental protection and rational use of natural resources in agriculture are the main directions of this scientific research. Contamination is caused by the substances of chemical, radiation and biological origin above the maximum permissible concentration (MPC). The main source of soil contamination in the arable land, hayfields and pastures is the waste of livestock complexes, agricultural chemicals (fertilizers, pesticides), motor vehicle exhausts, industrial emissions, sewage from settlements, etc. The ecological state of the soil and vegetation cover is largely determined by agricultural activities. The agricultural production technology complicating is accompanied by increase in the degree of environmental risk, especially in the chemicalization of agriculture. Pollution also enters the soil with atmospheric precipitation, surface waste. They are also introduced into the soil layer by soil and groundwater. The most dangerous for human health is considered to be contamination with heavy metals (HM)-lead, mercury and cadmium. However, the concentration of the rest elements is no less harmful. The paradox of heavy metals is that in certain quantities they are necessary to ensure the normal life of plants and organisms but their excess can lead to serious diseases and even death. A nutritional cycle causes harmful compounds to enter the human body and often cause great harm to health. The present work reveals the results of the research of a long-term experience on accumulation and distribution of heavy metals on the arable layer profile depending on the concentration in humus soil and the system of ground processing.

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