WorldWideScience

Sample records for maximum ga content

  1. A mini-exhibition with maximum content

    CERN Multimedia

    Laëtitia Pedroso

    2011-01-01

    The University of Budapest has been hosting a CERN mini-exhibition since 8 May. While smaller than the main travelling exhibition it has a number of major advantages: its compact design alleviates transport difficulties and makes it easier to find suitable venues in the Member States. Its content can be updated almost instantaneously and it will become even more interactive and high-tech as time goes by.   The exhibition on display in Budapest. The purpose of CERN's new mini-exhibition is to be more interactive and easier to install. Due to its size, the main travelling exhibition cannot be moved around quickly, which is why it stays in the same country for 4 to 6 months. But this means a long waiting list for the other Member States. To solve this problem, the Education Group has designed a new exhibition, which is smaller and thus easier to install. Smaller maybe, but no less rich in content, as the new exhibition conveys exactly the same messages as its larger counterpart. However, in the slimm...

  2. Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

    International Nuclear Information System (INIS)

    Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

    2014-01-01

    The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

  3. Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

    2008-01-01

    We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

  4. A new wire fabrication processing using high Ga content Cu-Ga compound in V3Ga compound superconducting wire

    International Nuclear Information System (INIS)

    Hishinuma, Yoshimitsu; Nishimura, Arata; Kikuchi, Akihiro; Iijima, Yasuo; Takeuchi, Takao

    2007-01-01

    A superconducting magnet system is also one of the important components in an advanced magnetic confinement fusion reactor. Then it is required to have a higher magnetic field property to confine and maintain steady-sate burning deuterium (D)-tritium (T) fusion plasma in the large interspace during the long term operation. Burning plasma is sure to generate 14 MeV fusion neutrons during deuterium-tritium reaction, and fusion neutrons will be streamed and penetrated to superconducting magnet through large ports with damping neutron energy. Therefore, it is necessary to consider carefully not only superconducting property but also neutron irradiation property in superconducting materials for use in a future fusion reactor, and a 'low activation and high field superconducting magnet' will be required to realize the fusion power plant beyond International Thermonuclear Experimental Reactor (ITER). V-based superconducting material has a much shorter decay time of induced radioactivity compared with the Nb-based materials. We thought that the V 3 Ga compound was one of the most promising materials for the 'low activation and higher field superconductors' for an advanced fusion reactor. However, the present critical current density (J c ) property of V 3 Ga compound wire is insufficient for apply to fusion magnet applications. We investigated a new route PIT process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V 3 Ga compound wire. (author)

  5. Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots

    Science.gov (United States)

    Sharma, Akant Sagar; Dhar, S.

    2018-02-01

    The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.

  6. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2 × 75 μm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency f T of 65 GHz and a maximum oscillation frequency f max of 123 GHz are deduced from rf small signal measurements. The high f max demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies. (cross-disciplinary physics and related areas of science and technology)

  7. Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

    DEFF Research Database (Denmark)

    Sadowski, Janusz; Domagala, Jaroslaw Z.; Mathieu, Roland

    2011-01-01

    °C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270°C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400°C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn......,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals......X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400°C) and high-temperature (560°C and 630...

  8. Doping of GaN{sub 1-x}As{sub x} with high As content

    Energy Technology Data Exchange (ETDEWEB)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  9. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  10. Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

    International Nuclear Information System (INIS)

    Vickers, M.E.; Kappers, M.J.; Smeeton, T.M.; Thrush, E.J.; Barnard, J.S.; Humphreys, C.J.

    2003-01-01

    We have determined the indium content and the layer thicknesses in an InGaN epilayer and InGaN/GaN quantum well structures by high-resolution x-ray diffraction (XRD) using the (002) reflection. The thickness of the total repeat (an InGaN well plus a GaN barrier) in the superlattice is easily determined from the spacing between the satellite peaks in an omega/2theta scan. Measurement of the individual thickness of InGaN and GaN layers and the indium content is less straightforward, since for multilayer structures the peak positions are influenced by both the indium content and the thickness ratio of the GaN to the InGaN layer. Thus, several different models may give reasonable fits to data collected over a limited range (about 1 deg. omega/2theta either side of the (002)) showing only lower-order (-3 to +3) satellite peaks. Whenever possible, we have collected data over a wide range (about 4 deg. omega/2theta) and determined the thickness ratio by examination of the relative intensities of weak higher-order satellite peaks (-7 to +5). An alternative but less sensitive method is to use relative intensities from x-ray reflectivity measurements to give the thickness ratio. Once the thickness of both the InGaN and GaN layers has been established, the InGaN composition can be determined from the peak positions. If the quality of the samples is poor, because of inhomogeneities or wide diffuse interfaces, there are insufficient data to characterize the structures. There is good agreement between the composition of the epilayer as determined by XRD and secondary ion mass spectroscopy and good agreement between x-ray and electron microscopy results for the quantum well structures. We find no variation from Vegard's rule for In contents less than 0.20. This article shows that structural parameters of high-quality InGaN/GaN superlattices with 10 and 5 repeats can be determined reliably by x-ray techniques: The InGaN and GaN thicknesses to ±1 Aa and the In content to ±0.01

  11. An entropy approach for evaluating the maximum information content achievable by an urban rainfall network

    Directory of Open Access Journals (Sweden)

    E. Ridolfi

    2011-07-01

    Full Text Available Hydrological models are the basis of operational flood-forecasting systems. The accuracy of these models is strongly dependent on the quality and quantity of the input information represented by rainfall height. Finer space-time rainfall resolution results in more accurate hazard forecasting. In this framework, an optimum raingauge network is essential in predicting flood events.

    This paper develops an entropy-based approach to evaluate the maximum information content achievable by a rainfall network for different sampling time intervals. The procedure is based on the determination of the coefficients of transferred and nontransferred information and on the relative isoinformation contours.

    The nontransferred information value achieved by the whole network is strictly dependent on the sampling time intervals considered. An empirical curve is defined, to assess the objective of the research: the nontransferred information value is plotted versus the associated sampling time on a semi-log scale. The curve has a linear trend.

    In this paper, the methodology is applied to the high-density raingauge network of the urban area of Rome.

  12. Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

    2011-07-01

    A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

  13. Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

    International Nuclear Information System (INIS)

    Lai, Wang; Jia-Xing, Wang; Wei, Zhao; Xiang, Zou; Yi, Luo

    2010-01-01

    Blue In 0.2 Ga 0.8 N multiple quantum wells (MQWs) with In x Ga 1–x N (x = 0.01–0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation. (condensed matter: structure, thermal and mechanical properties)

  14. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  15. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  16. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    International Nuclear Information System (INIS)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

    2012-01-01

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Investigation of new approaches for InGaN growth with high indium content for CPV application

    Energy Technology Data Exchange (ETDEWEB)

    Arif, Muhammad; Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz (France); Sundaram, Suresh; Streque, Jérémy; Gmili, Youssef El [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, Renaud; Voss, Paul L. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Belahsene, Sofiane; Ramdane, Abderahim; Martinez, Anthony; Patriarche, Gilles [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Fix, Thomas; Slaoui, Abdelillah [CNRS, ICUBE - Université de Strasbourg (France); Ougazzaden, Abdallah [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France)

    2015-09-28

    We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.

  19. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

    2016-01-01

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  20. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  1. Rht18 Semidwarfism in Wheat Is Due to Increased GA 2-oxidaseA9 Expression and Reduced GA Content

    Czech Academy of Sciences Publication Activity Database

    Ford, B. A.; Foo, E.; Sharwood, R.; Karafiátová, Miroslava; Vrána, Jan; MacMillan, C.; Nichols, D. S.; Steuernagel, B.; Uauy, C.; Doležel, Jaroslav; Chandler, M.; Spielmeyer, W.

    2018-01-01

    Roč. 177, č. 1 (2018), s. 168-180 ISSN 0032-0889 R&D Projects: GA MŠk(CZ) LO1204; GA ČR GBP501/12/G090 Institutional support: RVO:61389030 Keywords : green-revolution * gibberellin biosynthesis * ectopic expression * common wheat * gene * rice * barley * mutant * chromosomes Subject RIV: EB - Genetics ; Molecular Biology OBOR OECD: Genetics and heredity (medical genetics to be 3) Impact factor: 6.456, year: 2016

  2. Determination of indium content of GaAs/(In,Ga)As/(GaAs) core-shell(-shell) nanowires by x-ray diffraction and nano x-ray fluorescence

    Science.gov (United States)

    Al Hassan, Ali; Lewis, R. B.; Küpers, H.; Lin, W.-H.; Bahrami, D.; Krause, T.; Salomon, D.; Tahraoui, A.; Hanke, M.; Geelhaar, L.; Pietsch, U.

    2018-01-01

    We present two complementary approaches to investigate the In content in GaAs/(In,Ga)As/(GaAs) core-shell-(shell) nanowire (NW) heterostructures using synchrotron radiation. The key advantage of our methodology is that NWs are characterized in their as-grown configuration, i.e., perpendicularly standing on a substrate. First, we determine the mean In content of the (In,Ga)As shell by high-resolution x-ray diffraction (XRD) from NW ensembles. In particular, we disentangle the influence of In content and shell thickness on XRD by measuring and analyzing two reflections with diffraction vector parallel and perpendicular to the growth axis, respectively. Second, we study the In distribution within individual NWs by nano x-ray fluorescence. Both the NW (111) basal plane, that is parallel to the surface of the substrate, and the {10-1} sidewall plane were scanned with an incident nanobeam of 50 nm width. We investigate three samples with different nominal In content of the (In,Ga)As shell. In all samples, the average In content of the shell determined by XRD is in good agreement with the nominal value. For a nominal In content of 15%, the In distribution is fairly uniform between all six sidewall facets. In contrast, in NWs with nominally 25% In content, different sidewall facets of the same NW exhibit different In contents. This effect is attributed to shadowing during growth by molecular beam epitaxy. At the same time, along the NW axis the In distribution is still fairly homogeneous. In NWs with 60% nominal In content and no outer GaAs shell, the In content varies significantly both between different sidewall facets and along the NW axis. This fluctuation is explained by the formation of (In,Ga)As mounds that grow simultaneously with a thinner (In,Ga)As shell. The methodology presented here may be applied also to other core-shell NWs with a ternary shell and paves the way to correlating NW structure with functional properties that depend on the as-grown configuration

  3. Genetic Algorithm with Maximum-Minimum Crossover (GA-MMC) Applied in Optimization of Radiation Pattern Control of Phased-Array Radars for Rocket Tracking Systems

    Science.gov (United States)

    Silva, Leonardo W. T.; Barros, Vitor F.; Silva, Sandro G.

    2014-01-01

    In launching operations, Rocket Tracking Systems (RTS) process the trajectory data obtained by radar sensors. In order to improve functionality and maintenance, radars can be upgraded by replacing antennas with parabolic reflectors (PRs) with phased arrays (PAs). These arrays enable the electronic control of the radiation pattern by adjusting the signal supplied to each radiating element. However, in projects of phased array radars (PARs), the modeling of the problem is subject to various combinations of excitation signals producing a complex optimization problem. In this case, it is possible to calculate the problem solutions with optimization methods such as genetic algorithms (GAs). For this, the Genetic Algorithm with Maximum-Minimum Crossover (GA-MMC) method was developed to control the radiation pattern of PAs. The GA-MMC uses a reconfigurable algorithm with multiple objectives, differentiated coding and a new crossover genetic operator. This operator has a different approach from the conventional one, because it performs the crossover of the fittest individuals with the least fit individuals in order to enhance the genetic diversity. Thus, GA-MMC was successful in more than 90% of the tests for each application, increased the fitness of the final population by more than 20% and reduced the premature convergence. PMID:25196013

  4. Highly Sensitive ZnO(Ga, In for Sub-ppm Level NO2 Detection: Effect of Indium Content

    Directory of Open Access Journals (Sweden)

    Natalia Vorobyeva

    2017-06-01

    Full Text Available Nanocrystalline ZnO, ZnO(Ga, and ZnO(Ga, In samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface.

  5. Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tong [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Jiao, Shujie, E-mail: shujiejiao@gmail.com [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150001 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Dongbo [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gao, Shiyong, E-mail: gaoshiyong@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Tianpeng [EpiTop Optoelectronic Co., Ltd., Pingxiang 337000 (China); Liang, Hongwei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao, Liancheng [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-02-05

    Highlights: • Structural and optical properties of In GaN/Al{sub x}In{sub y}Ga{sub 1−x−y}N MQWs were investigated. • The existence of In-rich clusters has been verified by Raman spectra. • The degree of localization effect increase with increasing Al content in barriers. • The origin of the deep localized states could be assigned to the larger QCSE. • Recombination mechanism of carriers with increasing temperature has been proposed. - Abstract: The structural and optical properties of In{sub 0.20}Ga{sub 0.80}N/Al{sub x}In{sub y}Ga{sub 1−x−y}N multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In{sub 0.20}Ga{sub 0.80}N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics.

  6. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  7. Damp Heat Treatment of Cu(In,GaSe2 Solar Cells with Different Sodium Content

    Directory of Open Access Journals (Sweden)

    Felix Daume

    2013-11-01

    Full Text Available Long term stability is crucial to maturing any photovoltaic technology. We have studied the influence of sodium, which plays a key role in optimizing the performance of Cu(In,GaSe2 (CIGSe solar cells, on the long-term stability of flexible CIGSe solar cells on polyimide foil. The standardized procedure of damp heat exposure (85% relative humidity at 85 °C was used to simulate aging of the unencapsulated cells in multiple time steps while they were characterized by current-voltage analysis, capacitance-voltage profiling, as well as electroluminescence imaging. By comparing the aging process to cells that were exposed to heat only, it could be confirmed that moisture plays the key role in the degradation process. We found that cells with higher sodium content suffer from a more pronounced degradation. Furthermore, the experimental results indicate the superposition of an enhancing and a deteriorating mechanism during the aging process. We propose an explanation based on the corrosion of the planar contacts of the solar cell.

  8. Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

    2012-05-15

    Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Defect chalcopyrite Cu(In{sub 1-x}Ga{sub x}){sub 3}Se{sub 5} (0Ga-content Cu(In,Ga) Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, M.A.; Wiesner, H.; Niles, D.; Ramanathan, K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character - both structural and electrical - at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

  10. Synthesis of high Al content AlxGa1−xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

    International Nuclear Information System (INIS)

    Cai, Hua; You, Qinghu; Hu, Zhigao; Guo, Shuang; Yang, Xu; Sun, Jian; Xu, Ning; Wu, Jiada

    2014-01-01

    Highlights: • Al x Ga 1−x N films were synthesized by co-ablation of an Al target and a GaAs target. • Nitrogen plasma was used to assist the synthesis of Al x Ga 1−x N ternary films. • The Al x Ga 1−x N films are slightly rich in N with an Al content above 0.6. • The Al x Ga 1−x N films are hexagonal wurtzite in crystal structure. • The Al x Ga 1−x N films have an absorption edge of 260 nm and a band gap of 4.7 eV. - Abstract: We present the synthesis of Al x Ga 1−x N ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the Al x Ga 1−x N films are compared with those of binary GaN and AlN films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance

  11. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  12. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

    Science.gov (United States)

    Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

    2013-09-01

    We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

  13. Teores de cátions dos vinhos da Serra Gaúcha Cation content of wines from the Serra Gaúcha region

    Directory of Open Access Journals (Sweden)

    Luiz Antenor Rizzon

    2008-09-01

    Full Text Available Os cátions representam uma parte das cinzas e podem contribuir para caracterizar os vinhos de diferentes regiões vitícolas. O objetivo do presente trabalho foi determinar a concentração dos principais cátions de vinhos da Serra Gaúcha, RS, visando a sua caracterização. Foram analisados 600 vinhos de mesa e 380 vinhos finos, ambos distribuídos nas categorias tinto, rosado e branco. As análises de K+, Na+, Li+ e Rb+ foram feitas por emissão de chama, enquanto que as de Ca++, Mg++, Mn++, Fe++, Cu++ e Zn++ por absorção atômica. Os dados foram submetidos à análise de variância, ao teste de Tukey e à Análise de Componentes Principais (ACP. A análise de variância não mostrou diferenças significativas nas concentrações de Na+, Cu++ e Zn++ nos diferentes tipos de vinhos da Serra Gaúcha; os vinhos de mesa apresentaram maior concentração de Mn++ em relação aos finos; os de mesa e os rosados finos apresentaram concentração mais elevada de Fe++; enquanto que os tintos finos apresentaram concentrações mais elevadas de K+ e Rb+. A ACP permitiu diferenciar os vinhos em relação à cor - tinto, rosado e branco - e ao tipo - fino e de mesa.Cations represent an important part of the ash content and they can contribute to characterize wines from different viticultural regions. The purpose of this work was to determine the concentration of the main cations in the wines of the Serra Gaúcha region in Brazil. Six hundred table wines, primarily from American/hybrid varieties, and 380 wines elaborated with Vitis vinifera varieties, both including red, rosé and white wines, were analyzed. The analyses of K+, Na+, Li+ and Rb+ were performed by flame emission, while Ca++, Mg++, Mn++, Fe++, Cu++ and Zn++ analyses were performed by atomic absorption. Data were submitted to analysis of variance and the Tukey test and to Principal Component Analysis (PCA. Results showed that there was no significant difference in the concentration of Na

  14. Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

    2013-11-01

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

  15. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    International Nuclear Information System (INIS)

    Terasako, Tomoaki; Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki; Shirakata, Sho; Yamamoto, Tetsuya

    2015-01-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F O2 ) introduced into the chamber during the deposition process and the Ga 2 O 3 content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F O2 or the increase in Ga 2 O 3 content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga Zn s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  16. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yamamoto, Tetsuya [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

    2015-12-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F{sub O2}) introduced into the chamber during the deposition process and the Ga{sub 2}O{sub 3} content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F{sub O2} or the increase in Ga{sub 2}O{sub 3} content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga{sub Zn}s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  17. Analysis of the effect of gallium content on the magnetomechanical behavior of single-crystal FeGa alloys using an energy-based model

    International Nuclear Information System (INIS)

    Atulasimha, Jayasimha; Flatau, Alison B; Cullen, James R

    2008-01-01

    The magnetomechanical behavior of single-crystal iron–gallium alloys with varying gallium content was found to be strongly dependent on the Ga content (Atulasimha 2006 PhD Thesis). An energy-based model (Atulasimha 2006 PhD Thesis, Armstrong and William 1997 J. Appl. Phys. 81 2321) is employed to simulate the strikingly different actuation behavior (λ–H and B–H curves under different compressive stresses) and validated against experimental data for 19, 24.7 and 29 at.% Ga, [100] oriented, slow-cooled single-crystal FeGa alloys. The effect of gallium content on the model parameters, specifically the cubic magnetocrystalline anisotropy constants and the Armstrong-smoothing factor Ω, their physical significance and ultimately their effect on the magnetomechanical behavior are analyzed and explained

  18. Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

    Science.gov (United States)

    Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

    2011-05-01

    In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

  19. Variation of sulfur content in Cu(In,Ga)(S,Se){sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Knipper, Martin; Knecht, Robin; Riedel, Ingo; Parisi, Juergen [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg (Germany)

    2011-07-01

    Chalcopyrite thin film solar cells made of the compound semiconductor Cu(In,Ga)(S,Se){sub 2} (CIGSSe) have a strong potential for achieving high efficiencies at low production costs. Volume production of CIGSSe-modules has already started to exploit their favorable attributes such as low cost processing and reasonable module efficiency. In this study we studied industrially produced CIGSSe modules obtained from rapid thermal processing (RTP) for sulfurization. In detail, we investigated the effect of sulfur offer and RTP temperature (500 C to 580 C) on the photoelectric characteristics of small-area solar cells cut from the modules. Current-voltage profiling under standard test conditions revealed a strong influence of the particular process recipe on the open circuit voltage whereas significant variations of the maximum quantum efficiency can be observed. X-ray diffraction was employed to relate these effects to the crystallographic structure of the actual CIGSSe films. Lock-in thermographic imaging was employed to link apparent film inhomogeneities and disruptions to the specific process recipe.

  20. Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Olvera-Herandez, J; Olvera-Cervantes, J; Rojas-Lopez, M; Navarro-Contreras, H; Vidal, M A; Anda, F de

    2006-01-01

    Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga 1-x In x As y Sb 1-y alloys with low (In, As) contents (0.03 0 C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys

  1. Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2012-04-15

    In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

  2. Resonant photoemission at the Ga 3p photothreshold in In xGa1-xN

    International Nuclear Information System (INIS)

    Colakerol, L.; Glans, P.-A.; Plucinski, L.; Zhang, Y.; Smith, K.E.; Zakharov, A.A.; Nyholm, R.; Cabalu, J.; Moustakas, T.D.

    2006-01-01

    Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film In x Ga 1-x N alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d 8 state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of In x Ga 1-x N thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases

  3. Airborne Hyperspectral Evaluation of Maximum Gross Photosynthesis, Gravimetric Water Content, and CO2 Uptake Efficiency of the Mer Bleue Ombrotrophic Peatland

    Directory of Open Access Journals (Sweden)

    J. Pablo Arroyo-Mora

    2018-04-01

    Full Text Available Peatlands cover a large area in Canada and globally (12% and 3% of the landmass, respectively. These ecosystems play an important role in climate regulation through the sequestration of carbon dioxide from, and the release of methane to, the atmosphere. Monitoring approaches, required to understand the response of peatlands to climate change at large spatial scales, are challenged by their unique vegetation characteristics, intrinsic hydrological complexity, and rapid changes over short periods of time (e.g., seasonality. In this study, we demonstrate the use of multitemporal, high spatial resolution (1 m2 hyperspectral airborne imagery (Compact Airborne Spectrographic Imager (CASI and Shortwave Airborne Spectrographic Imager (SASI sensors for assessing maximum instantaneous gross photosynthesis (PGmax in hummocks, and gravimetric water content (GWC and carbon uptake efficiency in hollows, at the Mer Bleue ombrotrophic bog. We applied empirical models (i.e., in situ data and spectral indices and we derived spatial and temporal trends for the aforementioned variables. Our findings revealed the distribution of hummocks (51.2%, hollows (12.7%, and tree cover (33.6%, which is the first high spatial resolution map of this nature at Mer Bleue. For hummocks, we found growing season PGmax values between 8 μmol m−2 s−1 and 12 μmol m−2 s−1 were predominant (86.3% of the total area. For hollows, our results revealed, for the first time, the spatial heterogeneity and seasonal trends for gravimetric water content and carbon uptake efficiency for the whole bog.

  4. Content

    DEFF Research Database (Denmark)

    Keiding, Tina Bering

    secondary levels. In subject matter didactics, the question of content is more developed, but it is still mostly confined to teaching on lower levels. As for higher education didactics, discussions on selection of content are almost non-existent on the programmatic level. Nevertheless, teachers are forced...... curriculum, in higher education, and to generate analytical categories and criteria for selection of content, which can be used for systematic didactical reflection. The larger project also concerns reflection on and clarification of the concept of content, including the relation between content at the level......Aim, content and methods are fundamental categories of both theoretical and practical general didactics. A quick glance in recent pedagogical literature on higher education, however, reveals a strong preoccupation with methods, i.e. how teaching should be organized socially (Biggs & Tang, 2007...

  5. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

    Directory of Open Access Journals (Sweden)

    Nigamananda Samal

    2010-02-01

    Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

  6. The discrete maximum principle for Galerkin solutions of elliptic problems

    Czech Academy of Sciences Publication Activity Database

    Vejchodský, Tomáš

    2012-01-01

    Roč. 10, č. 1 (2012), s. 25-43 ISSN 1895-1074 R&D Projects: GA AV ČR IAA100760702 Institutional research plan: CEZ:AV0Z10190503 Keywords : discrete maximum principle * monotone methods * Galerkin solution Subject RIV: BA - General Mathematics Impact factor: 0.405, year: 2012 http://www.springerlink.com/content/x73624wm23x4wj26

  7. Effect of Thiamine, Ascorbic acid and Gibberellic acid (GA3 on Growth Characteristics, Pigment Content and Reduced Sugars of Petunia

    Directory of Open Access Journals (Sweden)

    moslem salehi

    2017-02-01

    Full Text Available Introduction: Bedding plants, especially petunia is important element for urban landscaping and attracted the attention of landscapers. This is due to some properties such as growth habit and color. The petunia (Petunia hybrida L. belongs to Solanaceae family that has annual and perennial varieties. This plant is originally from Argentina, Brazil and Uruguay. Some plant growth regulators such as gibberellic acid (GA3 and vitamins including thiamine and ascorbic acid affect plant growth and development and may extend flowering period. Vitamin C affects cell division and cell growth in plants and is effective on the feeding cycle activity in higher plants and it has an important role in electron transport system. The concentrations of 50 and 100 ppm of vitamin C and thiamine can increase the plant height, leaf number, leaf area, fresh and dry weight, and chemical compounds of the Syngonium plant. The application of 100 mg/l of GA3 significantly increased plant height and the number of leaves of gladiolus. Material and methods: The experiment was arranged in a factorial based on a completely randomized design with five replications. In this research, growth characteristics (lateral branch number, flower number, flower diameter, stem diameter, root length, and lateral branch length and biochemical characteristics (chlorophyll a, chlorophyll b, total chlorophyll, carotenoids, and reducing sugar were measured. After seeding and transplanting the seedling at 6 leaf stage, plants sprayed at 4 various growth stages with following treatments: 1-\tControl 2-\tVitamin C(100 mg/l 3-\tThiamin (100 mg/l 4-\tGibberellic acid (100 mg/l 5-\tVitamin C and Thiamin (The concentration of both 100 mg/l 6-\tVitamin C and Gibberellic acid (The concentration of both 100 mg/l 7-\tThiamin and Gibberellic acid (The concentration of both 100 mg/l 8-\tVitamin C, Thiamin and Gibberellic acid (The concentration of three 100 mg/l Data obtained from the measured parameters

  8. Contents

    Directory of Open Access Journals (Sweden)

    Editor IJRED

    2012-11-01

    Full Text Available International Journal of Renewable Energy Development www.ijred.com Volume 1             Number 3            October 2012                ISSN 2252- 4940   CONTENTS OF ARTICLES page Design and Economic Analysis of a Photovoltaic System: A Case Study 65-73 C.O.C. Oko , E.O. Diemuodeke, N.F. Omunakwe, and E. Nnamdi     Development of Formaldehyde Adsorption using Modified Activated Carbon – A Review 75-80 W.D.P Rengga , M. Sudibandriyo and M. Nasikin     Process Optimization for Ethyl Ester Production in Fixed Bed Reactor Using Calcium Oxide Impregnated Palm Shell Activated Carbon (CaO/PSAC 81-86 A. Buasri , B. Ksapabutr, M. Panapoy and N. Chaiyut     Wind Resource Assessment in Abadan Airport in Iran 87-97 Mojtaba Nedaei       The Energy Processing by Power Electronics and its Impact on Power Quality 99-105 J. E. Rocha and B. W. D. C. Sanchez       First Aspect of Conventional Power System Assessment for High Wind Power Plants Penetration 107-113 A. Merzic , M. Music, and M. Rascic   Experimental Study on the Production of Karanja Oil Methyl Ester and Its Effect on Diesel Engine 115-122 N. Shrivastava,  , S.N. Varma and M. Pandey  

  9. Evolution of the structural and magnetic properties of sputtered Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films upon the increase of Tb content

    Energy Technology Data Exchange (ETDEWEB)

    Ranchal, R., E-mail: rociran@fis.ucm.es [Dpto. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain); Fin, S. [Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy); Bisero, D. [CNISM and Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy)

    2016-05-15

    Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) ternary alloys have been obtained by cosputtering from Tb{sub 33}Fe{sub 67} and Fe{sub 72}Ga{sub 28} targets. In contrast with other Tb–Fe–Ga compounds that consist of just one structural phase, the diffraction pattern of the Tb{sub 7}Fe{sub 73}Ga{sub 20} shows the presence of two different phases related to binary Tb–Fe and Fe–Ga alloys. This microstructure evolves as the Tb content is increased, and for a Tb of 11 at.% X-ray diffractometry only evidences the presence of a phase close to the TbFe{sub 2}. Although none of the studied samples show perpendicular magnetic anisotropy, there is a significant component of the magnetization perpendicular to the sample plane. The increase of the Tb content on the compounds from 7 at.% to 11 at.% enhances this component most probably due to the shift of the microstructure towards one similar to the TbFe{sub 2}. - Highlights: • Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films grown by cosputtering. • Evolution of the microstructure upon the increase of Tb. • Out of plane component of the magnetization stable up to 800 Oe.

  10. Lattice vibrations study of Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} quaternary alloys with low (In, As) content grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Olvera-Herandez, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Olvera-Cervantes, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Rojas-Lopez, M [Centro de Investigacion en BiotecnologIa Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72160 (Mexico); Navarro-Contreras, H [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Vidal, M A [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Anda, F de [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico)

    2006-01-01

    Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} alloys with low (In, As) contents (0.03 GaSb substrates at 540{sup 0}C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys.

  11. Evolution of phase transformation and magnetic properties with Fe content in Ni55-x Fe x Mn20Ga25 Heusler alloys

    Science.gov (United States)

    Zhang, Yuanlei; Li, Zhe; He, Xijia; Huang, Yinsheng; Xu, Kun; Jing, Chao

    2018-02-01

    A series of Ni55-x Fe x Mn20Ga25 (0  ⩽  x  ⩽  5) Heusler alloys was prepared to investigate their phase transitions and magnetic properties. At room temperature, these alloys present various crystal structures, and the unit cell volume enlarges with increase of Fe content in both austenite and martensite. Multiple magneto-structural transformations were observed in the parent alloy (x  =  0). In the process of cooling, it undergoes martensitic transformation (MT) from L21-type paramagnetic austenite to L10-type ferromagnetic martensite, accompanying an intermartensitic transformation (IMT, 7M  →  L10). By establishing a detailed phase diagram, we found that both MT and IMT shift to lower temperature simultaneously, while the ferromagnetic (FM) transition of austenite moves to higher temperature as Fe increases. With the further increase of Fe content beyond a critical value, both the IMT and the FM transitions split off from MT, and the former follows with the transforming sequence of 7M  →  5M. Based on the experimental data, some key magnetic parameters have been obtained in this system. The calculated magnetocrystalline anisotropy constant ({{K}1} ) of martensite quickly increases as Fe increases, and then it almost reaches a saturated value (~5.5  ×  105 J m-3) for the alloys with x  >  3. However, the spontaneous magnetic moment ({μs} ) attains a peak value of about 4.2 μ B/f.u. in the alloy with x  =  4, which is not consistent with the linear increasing of effective magnetic moment ({μef f} ). Further magnetic measurements with hydrostatic pressure indicate that such a discrepancy could be ascribed to the competition between the magnetic exchange interaction and the volume change of unit cell governed by the dopant Fe content.

  12. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

    Directory of Open Access Journals (Sweden)

    J. Hennig

    2015-07-01

    Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  13. Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

    Science.gov (United States)

    Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

    2018-06-01

    In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

  14. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  15. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  16. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

    International Nuclear Information System (INIS)

    Liu Fang; Qin Zhixin

    2016-01-01

    Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

  17. Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

    International Nuclear Information System (INIS)

    Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

    2004-01-01

    Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

  18. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  19. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    K. Collar

    2017-07-01

    Full Text Available We investigate the change of the valence band energy of GaAs1-xBix (0GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

  20. Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

    Science.gov (United States)

    Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

    2010-11-01

    The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

  1. Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

    International Nuclear Information System (INIS)

    Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

    2010-01-01

    The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

  2. Teor e capacidade máxima de adsorção de arsênio em Latossolos brasileiros Content and maximum capacity of arsenic adsorption in Brazilian Oxisols

    Directory of Open Access Journals (Sweden)

    Mari Lucia Campos

    2007-12-01

    Full Text Available A alta toxicidade do As aos animais e humanos e a possibilidade de existência de grande número de áreas contaminadas tornam imprescindível o conhecimento do teor semitotal em solos ditos não-contaminados e dos processos de adsorção do As em solos de carga variável. O objetivo deste trabalho foi determinar o teor e a capacidade máxima de adsorção de As (CMADS AS em Latossolos. O teor total foi determinado pelo método USEPA 3051A, e a CMADS As, com auxílio de isotermas de Langmuir com base nos valores de adsorção obtidos em dose de As (0, 90, 190, 380, 760 e 1.150 µmol L-1 (relação solo:solução final = 1:100, a pH 5,5 e força iônica de 15 mmol L-1. Os 17 Latossolos apresentaram teor médio total de As de 5,92 mg kg-1 e CMADS As média de 2.013 mg kg-1. O teor de argila e os óxidos de Fe e Al apresentaram influência positiva na CMADS As.In view of the toxicity of As for man and animals and the possibility of existence of a great number of contaminated areas it is imperative to know the total As content in soils considered uncontaminated and about As sorption processes in soils of variable charge. The objective of this work was to determine the total content and maximum capacity of As adsorption (CMADS As in Oxisols. The total content was determined by the USEPA 3051A method. The cmADS As was determined by the Langmuir Isotherms using six solution concentrations (0, 0.09, 0.19, 0.38, 0.76, 1.15 mmol L-1 (1:100 soil: solution ratio, pH values 5.5 and ionic strength 15 mmol L-1. In the 17 Oxisols the average total As content was 5.92 mg kg-1 and mean cmADS As was 2.013 mg kg-1. Clay, and Fe and Al oxides content influenced cmADSs positively.

  3. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    International Nuclear Information System (INIS)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

    2010-01-01

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  4. Translocation of labelled assimilates, ion uptake and nucleic acids contents in zea mays plants as influenced by application of the herbicide dual and the bioregulaators GA3 and kinetin

    International Nuclear Information System (INIS)

    Hassanein, R.AA.; Khodary, S.E.A.; Abdel-Aziz, S.M.

    2001-01-01

    Maize seedlings, grown hydroponic for one month, were undertaken o investigate the effect of dual (metolachlor), bio regulators (GA 3 and kinetin) and their interaction with dual on translocation rate of assimilates, nucleic acids content. ion uptake and the activities of protease and nitrate reductase enzymes. Dual at all concentrations decreased the rate of assimilates translocation and nucleic acids levels. Also reduction in the ability of the treated plants to absorb ions from the growth medium as well as the activities of nitrate reductase and protease enzymes were retarded upon dual application. The results also revealed that treatment with either GA 3 or kinetin in combination with dual, reversed the adverse action of the herbicide on zea mays plants

  5. Effect of lead on nucleic acid and protein contents of rice (Oryza sativa L. ) seedlings and its interaction with IAA and GA/sub 3/ in different plant systems

    Energy Technology Data Exchange (ETDEWEB)

    Maitra, P.; Mukherh, S.

    1979-09-01

    Activity of lead acetate, (CH/sub 3/COO)/sub 2/Pb, 3 H/sub 2/O, was studied in germinating rice seedlings with respect to RNA, DNA and alkali soluble protein contents. RNA, DNA and protein contents greatly reduced both in embryo and endosperm with increasing concentrations of lead and with concomitant increase in amino acid content in embryo. When IAA was supplied in combination with lead acetate, variable amounts of relief of elongation inhibition of wheat coleoptile sections were noticed. With GA/sub 3/, however, lead-induced inhibition of either lettuce (Lactuca sativa L.) hypocotyl elongation or ..cap alpha..-amylase production in rice half seeds was largely overcome.

  6. Raman scattering analysis of Cu-poor Cu(In,Ga)Se{sub 2} cells fabricated on polyimide substrates: Effect of Na content on microstructure and phase structure

    Energy Technology Data Exchange (ETDEWEB)

    Izquierdo-Roca, V. [IN2UB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); Caballero, R. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Perez-Rodriguez, A., E-mail: aperezr@irec.cat [IN2UB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Morante, J.R. [INUB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany)

    2011-08-31

    This work reports the Raman scattering surface and in-depth resolved analysis of Cu-poor Cu(In,Ga)Se{sub 2} (CIGS) grown on polyimide substrates. In order to study the effect of Na on the formation and microstructure of the CIGS and the corresponding Cu-poor ordered vacancy compound (OVC) phases, a NaF precursor layer with different thicknesses was deposited on the Mo-coated substrates before growing of the samples. The Raman spectroscopy data are correlated with the analysis of the samples by Auger electron spectroscopy and scanning electron microscopy. These data corroborate the significant role of Na on the inhibition of Ga-In interdiffusion and on the formation of the MoSe{sub 2} interfacial phase at the back region of the layers. Presence of Na also leads to an enhancement in the formation of the chalcopyrite CIGS phase and a decrease in the occurrence of the dominant OVC phase at the surface region. This study confirms the strong dependence of the microstructure and phase distribution in CIGS absorber layers on the Na available during their growth.

  7. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

    International Nuclear Information System (INIS)

    Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

    2013-01-01

    Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

  8. Approximate maximum parsimony and ancestral maximum likelihood.

    Science.gov (United States)

    Alon, Noga; Chor, Benny; Pardi, Fabio; Rapoport, Anat

    2010-01-01

    We explore the maximum parsimony (MP) and ancestral maximum likelihood (AML) criteria in phylogenetic tree reconstruction. Both problems are NP-hard, so we seek approximate solutions. We formulate the two problems as Steiner tree problems under appropriate distances. The gist of our approach is the succinct characterization of Steiner trees for a small number of leaves for the two distances. This enables the use of known Steiner tree approximation algorithms. The approach leads to a 16/9 approximation ratio for AML and asymptotically to a 1.55 approximation ratio for MP.

  9. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-10-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm-3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1-2 × 1015 cm-3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate

  10. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  11. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-01-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N 2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N 2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10 16 to 3.8 × 10 19 cm −3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10 15 cm −3 . The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the

  12. Maximum permissible dose

    International Nuclear Information System (INIS)

    Anon.

    1979-01-01

    This chapter presents a historic overview of the establishment of radiation guidelines by various national and international agencies. The use of maximum permissible dose and maximum permissible body burden limits to derive working standards is discussed

  13. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  14. On a Weak Discrete Maximum Principle for hp-FEM

    Czech Academy of Sciences Publication Activity Database

    Šolín, Pavel; Vejchodský, Tomáš

    -, č. 209 (2007), s. 54-65 ISSN 0377-0427 R&D Projects: GA ČR(CZ) GA102/05/0629 Institutional research plan: CEZ:AV0Z20570509; CEZ:AV0Z10190503 Keywords : discrete maximum principle * hp-FEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.943, year: 2007

  15. Multilevel maximum likelihood estimation with application to covariance matrices

    Czech Academy of Sciences Publication Activity Database

    Turčičová, Marie; Mandel, J.; Eben, Kryštof

    Published online: 23 January ( 2018 ) ISSN 0361-0926 R&D Projects: GA ČR GA13-34856S Institutional support: RVO:67985807 Keywords : Fisher information * High dimension * Hierarchical maximum likelihood * Nested parameter spaces * Spectral diagonal covariance model * Sparse inverse covariance model Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 0.311, year: 2016

  16. Discrete maximum principle for Poisson equation with mixed boundary conditions solved by hp-FEM

    Czech Academy of Sciences Publication Activity Database

    Vejchodský, Tomáš; Šolín, P.

    2009-01-01

    Roč. 1, č. 2 (2009), s. 201-214 ISSN 2070-0733 R&D Projects: GA AV ČR IAA100760702; GA ČR(CZ) GA102/07/0496; GA ČR GA102/05/0629 Institutional research plan: CEZ:AV0Z10190503 Keywords : discrete maximum principle * hp-FEM * Poisson equation * mixed boundary conditions Subject RIV: BA - General Mathematics

  17. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Uptake of /sup 67/Ga in the heart of rats treated with isoproterenol

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, T; Kojima, S; Kubodera, A

    1982-12-01

    Gallium-67 citrate (/sup 67/Ga) accumulation and various enzyme activities during the repair of rat heart with infarct-like lesions induced by isoproterenol (ISP) treatment were measured for 10 days after treatment. Serum creatine phosphokinase (CPK) and glutamic oxalacetic transaminase (GOT) activities were increased immediately after ISP treatment, reaching maximum levels of activity of 545+-64 U/ml and 542+-94 KU/ml, respectively, within 12 h. Uptake of /sup 67/Ga in the rat heart was elevated 12 h after ISP treatment, reaching a maximum on day 1 (0.267+-0.020% dose/g heart). This pattern was essentially similar to the pattern of uronic acid content in the 1.2 M NaCl fraction, which contained mainly heparan sulfate (HS). The activity of glucose-6-phosphate dehydrogenase (G-6-PDH), a marker enzyme for fibrogenesis of damaged tissues, was also elevated 12 h after the ISP treatment, reaching a maximum of approximately 2.47 times that of the control heart on day 1. On the other hand, there were no significant changes in the /sup 67/Ga uptake and uronic acid content in any of the fractions of the liver and kidneys. These findings suggested that HS might be an acceptor for /sup 67/Ga accumulation during the repair of rat heart with infarct-like lesions, in accord with our previous results on CCl/sub 4/-damaged rat liver.

  19. Uptake of 67Ga in the heart of rats treated with isoproterenol

    International Nuclear Information System (INIS)

    Sasaki, T.; Kojima, S.; Kubodera, A.

    1982-01-01

    Gallium-67 citrate ( 67 Ga) accumulation and various enzyme activities during the repair of rat heart with infarct-like lesions induced by isoproterenol (ISP) treatment were measured for 10 days after treatment. Serum creatine phosphokinase (CPK) and glutamic oxalacetic transaminase (GOT) activities were increased immediately after ISP treatment, reaching maximum levels of activity of 545+-64 U/ml and 542+-94 KU/ml, respectively, within 12 h. Uptake of 67 Ga in the rat heart was elevated 12 h after ISP treatment, reaching a maximum on day 1 (0.267+-0.020% dose/g heart). This pattern was essentially similar to the pattern of uronic acid content in the 1.2 M NaCl fraction, which contained mainly heparan sulfate (HS). The activity of glucose-6-phosphate dehydrogenase (G-6-PDH), a marker enzyme for fibrogenesis of damaged tissues, was also elevated 12 h after the ISP treatment, reaching a maximum of approximately 2.47 times that of the control heart on day 1. On the other hand, there were no significant changes in the 67 Ga uptake and uronic acid content in any of the fractions of the liver and kidneys. These findings suggested that HS might be an acceptor for 67 Ga accumulation during the repair of rat heart with infarct-like lesions, in accord with our previous results on CCl 4 -damaged rat liver. (orig.)

  20. Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

    2016-02-15

    Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

  1. Muchinako, GA

    African Journals Online (AJOL)

    Muchinako, GA. Vol 28, No 2 (2013) - Articles Children living and/or working on the streets in Harare: Issues and challenges. Abstract. ISSN: 1012-1080. AJOL African Journals Online. HOW TO USE AJOL... for Researchers · for Librarians · for Authors · FAQ's · More about AJOL · AJOL's Partners · Terms and Conditions of ...

  2. Maximum Acceleration Recording Circuit

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1995-01-01

    Coarsely digitized maximum levels recorded in blown fuses. Circuit feeds power to accelerometer and makes nonvolatile record of maximum level to which output of accelerometer rises during measurement interval. In comparison with inertia-type single-preset-trip-point mechanical maximum-acceleration-recording devices, circuit weighs less, occupies less space, and records accelerations within narrower bands of uncertainty. In comparison with prior electronic data-acquisition systems designed for same purpose, circuit simpler, less bulky, consumes less power, costs and analysis of data recorded in magnetic or electronic memory devices. Circuit used, for example, to record accelerations to which commodities subjected during transportation on trucks.

  3. Maximum Quantum Entropy Method

    OpenAIRE

    Sim, Jae-Hoon; Han, Myung Joon

    2018-01-01

    Maximum entropy method for analytic continuation is extended by introducing quantum relative entropy. This new method is formulated in terms of matrix-valued functions and therefore invariant under arbitrary unitary transformation of input matrix. As a result, the continuation of off-diagonal elements becomes straightforward. Without introducing any further ambiguity, the Bayesian probabilistic interpretation is maintained just as in the conventional maximum entropy method. The applications o...

  4. Maximum power demand cost

    International Nuclear Information System (INIS)

    Biondi, L.

    1998-01-01

    The charging for a service is a supplier's remuneration for the expenses incurred in providing it. There are currently two charges for electricity: consumption and maximum demand. While no problem arises about the former, the issue is more complicated for the latter and the analysis in this article tends to show that the annual charge for maximum demand arbitrarily discriminates among consumer groups, to the disadvantage of some [it

  5. Effect of Dy addition on mechanical and magnetic properties of Mn-rich Ni–Mn–Ga ferromagnetic shape memory alloys

    International Nuclear Information System (INIS)

    Gao, L.; Dong, G.F.; Gao, Z.Y.; Cai, W.

    2012-01-01

    Highlights: ► The Dy addition significantly improves the compressive properties of Ni–Mn–Ga alloy. ► The mechanism of the improved mechanical properties by adding Dy is discussed. ► Dy doping results in a change of the fracture type of Ni–Mn–Ga alloy. ► Curie temperature almost remained unchanged at low Dy content and then decreases. - Abstract: The effects of partial substitution of rare earth Dy for Ga on the mechanical and magnetic properties of Mn-rich Ni 50 Mn 29 Ga 21−x Dy x (0 ≤ x ≤ 5) ferromagnetic shape memory alloys were investigated in detail. The results show that an appropriate amount of Dy addition significantly improves the mechanical properties of Ni–Mn–Ga alloy. With an increase in Dy content, the compressive strength enhances rapidly at first and then becomes stable when the Dy content is more than 1 at.%. However, the compressive strain increases dramatically and reaches a maximum value with 1 at.% Dy addition. Further increase in Dy content makes the compressive strain of the alloys decrease gradually. The mechanism of the improved mechanical properties is also discussed. Moreover, Dy doping changes the fracture type from intergranular fracture of Ni–Mn–Ga alloy to transgranular cleavage fracture of Ni–Mn–Ga–Dy alloys. The Curie temperature remains almost unchanged at low Dy content and subsequently decreases.

  6. Controlled nitrogen incorporation in GaNSb alloys

    Directory of Open Access Journals (Sweden)

    M. J. Ashwin

    2011-09-01

    Full Text Available The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled.

  7. Maximum likely scale estimation

    DEFF Research Database (Denmark)

    Loog, Marco; Pedersen, Kim Steenstrup; Markussen, Bo

    2005-01-01

    A maximum likelihood local scale estimation principle is presented. An actual implementation of the estimation principle uses second order moments of multiple measurements at a fixed location in the image. These measurements consist of Gaussian derivatives possibly taken at several scales and/or ...

  8. Robust Maximum Association Estimators

    NARCIS (Netherlands)

    A. Alfons (Andreas); C. Croux (Christophe); P. Filzmoser (Peter)

    2017-01-01

    textabstractThe maximum association between two multivariate variables X and Y is defined as the maximal value that a bivariate association measure between one-dimensional projections αX and αY can attain. Taking the Pearson correlation as projection index results in the first canonical correlation

  9. 11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160

  10. A maximum modulus theorem for the Oseen problem

    Czech Academy of Sciences Publication Activity Database

    Kračmar, S.; Medková, Dagmar; Nečasová, Šárka; Varnhorn, W.

    2013-01-01

    Roč. 192, č. 6 (2013), s. 1059-1076 ISSN 0373-3114 R&D Projects: GA ČR(CZ) GAP201/11/1304; GA MŠk LC06052 Institutional research plan: CEZ:AV0Z10190503 Keywords : Oseen problem * maximum modulus theorem * Oseen potentials Subject RIV: BA - General Mathematics Impact factor: 0.909, year: 2013 http://link.springer.com/article/10.1007%2Fs10231-012-0258-x

  11. Relationship between binding activity of sup 67 Ga and low sulfated acid glycosaminoglycans

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yasuhito; Tsukada, Fumitake; Kohno, Hiroyuki (Tohoku Coll. of Pharmacy, Sendai (Japan)); Kubodera, Akiko (Science Univ. of Tokyo (Japan). School of Pharmaceutical Sciences)

    1989-01-01

    Sulfate content of acid glycosaminoglycan (AGAG) extracted from granuloma which had been produced by turpentine oil was inversely proportional to the amount of {sub 67}Ga accumulation in the granuloma. Additionally, the lowest sulfation occurred in granuloma at a peak of inflammation when the uptake of {sub 67}Ga had reached a maximum. On the basis of electrophoretic pattern, sulfate content, and specific optical rotation, it was concluded that acid glycosaminoglycans obtained from granuloma are mainly composed of chondroitin sulfate-A, -B, and desulfated heparin, while haparan sulfate was a minor component. From in vitro assays, desulfated acid glycosaminoglycans, especially desulfated-heparin and desulfated-heparan sulfate, were found to have a high affinity to {sub 67}Ga. These results suggest that low- or de-sulfation of AGAG is related to the accumulation of {sub 67}Ga in inflammatory lesions such as granuloma. Moreover, these results suggest that {sub 67}Ga does not bind to glycosaminoglycans via sulfuric acid residues. (author).

  12. Hall mobilities in GaN{sub x}As{sub 1-x}

    Energy Technology Data Exchange (ETDEWEB)

    Olea, Javier; Gonzalez-Diaz, German [Dpto. de Fisica Aplicada III, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Madrid 28040 (Spain); Yu, Kin Man; Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197 (United States)

    2010-07-15

    In this work we report a systematic study of the electron and hole mobilities of GaN{sub x}As{sub 1-x} alloys with different dopants (Zn, Te) and carrier concentrations (10{sup 17}-10{sup 19} cm{sup -3}). We found a very slight reduction of the hole mobility in p-GaN{sub x}As{sub 1-x} compared to p-GaAs, indicating that for small N contents ({proportional_to}1.6%) the valence band is not affected by the N incorporation. In a striking contrast, incorporation of even small amounts of N leads to an abrupt reduction of the electron mobility in n-GaN{sub x}As{sub 1-x}. We further show that the processes that limit the mobility in GaN{sub x}As{sub 1-x} can be explained by the band broadening and the random field scatterings. Considering these two scattering mechanisms we calculated the dependence of electron mobilities on electron concentration as well as on N composition in GaN{sub x}As{sub 1-x}. The calculations agree reasonably well with experiment data of maximum electron mobilities with alloy composition. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Maximum power point tracking

    International Nuclear Information System (INIS)

    Enslin, J.H.R.

    1990-01-01

    A well engineered renewable remote energy system, utilizing the principal of Maximum Power Point Tracking can be m ore cost effective, has a higher reliability and can improve the quality of life in remote areas. This paper reports that a high-efficient power electronic converter, for converting the output voltage of a solar panel, or wind generator, to the required DC battery bus voltage has been realized. The converter is controlled to track the maximum power point of the input source under varying input and output parameters. Maximum power point tracking for relative small systems is achieved by maximization of the output current in a battery charging regulator, using an optimized hill-climbing, inexpensive microprocessor based algorithm. Through practical field measurements it is shown that a minimum input source saving of 15% on 3-5 kWh/day systems can easily be achieved. A total cost saving of at least 10-15% on the capital cost of these systems are achievable for relative small rating Remote Area Power Supply systems. The advantages at larger temperature variations and larger power rated systems are much higher. Other advantages include optimal sizing and system monitor and control

  14. Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

    International Nuclear Information System (INIS)

    Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

    2006-01-01

    We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

  15. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

    KAUST Repository

    Majid, Mohammed Abdul

    2015-06-26

    The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

  16. Maximum entropy methods

    International Nuclear Information System (INIS)

    Ponman, T.J.

    1984-01-01

    For some years now two different expressions have been in use for maximum entropy image restoration and there has been some controversy over which one is appropriate for a given problem. Here two further entropies are presented and it is argued that there is no single correct algorithm. The properties of the four different methods are compared using simple 1D simulations with a view to showing how they can be used together to gain as much information as possible about the original object. (orig.)

  17. The last glacial maximum

    Science.gov (United States)

    Clark, P.U.; Dyke, A.S.; Shakun, J.D.; Carlson, A.E.; Clark, J.; Wohlfarth, B.; Mitrovica, J.X.; Hostetler, S.W.; McCabe, A.M.

    2009-01-01

    We used 5704 14C, 10Be, and 3He ages that span the interval from 10,000 to 50,000 years ago (10 to 50 ka) to constrain the timing of the Last Glacial Maximum (LGM) in terms of global ice-sheet and mountain-glacier extent. Growth of the ice sheets to their maximum positions occurred between 33.0 and 26.5 ka in response to climate forcing from decreases in northern summer insolation, tropical Pacific sea surface temperatures, and atmospheric CO2. Nearly all ice sheets were at their LGM positions from 26.5 ka to 19 to 20 ka, corresponding to minima in these forcings. The onset of Northern Hemisphere deglaciation 19 to 20 ka was induced by an increase in northern summer insolation, providing the source for an abrupt rise in sea level. The onset of deglaciation of the West Antarctic Ice Sheet occurred between 14 and 15 ka, consistent with evidence that this was the primary source for an abrupt rise in sea level ???14.5 ka.

  18. Maximum Entropy Fundamentals

    Directory of Open Access Journals (Sweden)

    F. Topsøe

    2001-09-01

    Full Text Available Abstract: In its modern formulation, the Maximum Entropy Principle was promoted by E.T. Jaynes, starting in the mid-fifties. The principle dictates that one should look for a distribution, consistent with available information, which maximizes the entropy. However, this principle focuses only on distributions and it appears advantageous to bring information theoretical thinking more prominently into play by also focusing on the "observer" and on coding. This view was brought forward by the second named author in the late seventies and is the view we will follow-up on here. It leads to the consideration of a certain game, the Code Length Game and, via standard game theoretical thinking, to a principle of Game Theoretical Equilibrium. This principle is more basic than the Maximum Entropy Principle in the sense that the search for one type of optimal strategies in the Code Length Game translates directly into the search for distributions with maximum entropy. In the present paper we offer a self-contained and comprehensive treatment of fundamentals of both principles mentioned, based on a study of the Code Length Game. Though new concepts and results are presented, the reading should be instructional and accessible to a rather wide audience, at least if certain mathematical details are left aside at a rst reading. The most frequently studied instance of entropy maximization pertains to the Mean Energy Model which involves a moment constraint related to a given function, here taken to represent "energy". This type of application is very well known from the literature with hundreds of applications pertaining to several different elds and will also here serve as important illustration of the theory. But our approach reaches further, especially regarding the study of continuity properties of the entropy function, and this leads to new results which allow a discussion of models with so-called entropy loss. These results have tempted us to speculate over

  19. Effect of Ga2O3 on the spectroscopic properties of erbium-doped boro-bismuth glasses.

    Science.gov (United States)

    Ling, Zhou; Ya-Xun, Zhou; Shi-Xun, Dai; Tie-Feng, Xu; Qiu-Hua, Nie; Xiang, Shen

    2007-11-01

    The spectroscopic properties and thermal stability of Er3+-doped Bi2O3-B2O3-Ga2O3 glasses are investigated experimentally. The effect of Ga2O3 content on absorption spectra, the Judd-Ofelt parameters Omega t (t=2, 4, 6), fluorescence spectra and the lifetimes of Er3+:4I 13/2 level are also investigated, and the stimulated emission cross-section is calculated from McCumber theory. With the increasing of Ga2O3 content in the glass composition, the Omega t (t=2, 4, 6) parameters, fluorescence full width at half maximum (FWHM) and the 4I 13/2 lifetimes of Er3+ first increase, reach its maximum at Ga2O3=8 mol.%, and then decrease. The results show that Er3+-doped 50Bi2O3-42B2O3-8Ga2O3 glass has the broadest FWHM (81nm) and large stimulated emission cross-section (1.03 x1 0(-20)cm2) in these glass samples. Compared with other glass hosts, the gain bandwidth properties of Er+3-doped Bi2O3-B2O3-Ga2O3 glass is better than tellurite, silicate, phosphate and germante glasses. In addition, the lifetime of 4I 13/2 level of Er(3+) in bismuth-based glass, compared with those in other glasses, is relative low due to the high-phonon energy of the B-O bond, the large refractive index of the host and the existence of OH* in the glass. At the same time, the glass thermal stability is improved in which the substitution of Ga2O3 for B2O3 strengthens the network structure. The suitability of bismuth-based glass as a host for a Er3+-doped broadband amplifier and its advantages over other glass hosts are also discussed.

  20. Probable maximum flood control

    International Nuclear Information System (INIS)

    DeGabriele, C.E.; Wu, C.L.

    1991-11-01

    This study proposes preliminary design concepts to protect the waste-handling facilities and all shaft and ramp entries to the underground from the probable maximum flood (PMF) in the current design configuration for the proposed Nevada Nuclear Waste Storage Investigation (NNWSI) repository protection provisions were furnished by the United States Bureau of Reclamation (USSR) or developed from USSR data. Proposed flood protection provisions include site grading, drainage channels, and diversion dikes. Figures are provided to show these proposed flood protection provisions at each area investigated. These areas are the central surface facilities (including the waste-handling building and waste treatment building), tuff ramp portal, waste ramp portal, men-and-materials shaft, emplacement exhaust shaft, and exploratory shafts facility

  1. Introduction to maximum entropy

    International Nuclear Information System (INIS)

    Sivia, D.S.

    1988-01-01

    The maximum entropy (MaxEnt) principle has been successfully used in image reconstruction in a wide variety of fields. We review the need for such methods in data analysis and show, by use of a very simple example, why MaxEnt is to be preferred over other regularizing functions. This leads to a more general interpretation of the MaxEnt method, and its use is illustrated with several different examples. Practical difficulties with non-linear problems still remain, this being highlighted by the notorious phase problem in crystallography. We conclude with an example from neutron scattering, using data from a filter difference spectrometer to contrast MaxEnt with a conventional deconvolution. 12 refs., 8 figs., 1 tab

  2. Solar maximum observatory

    International Nuclear Information System (INIS)

    Rust, D.M.

    1984-01-01

    The successful retrieval and repair of the Solar Maximum Mission (SMM) satellite by Shuttle astronauts in April 1984 permitted continuance of solar flare observations that began in 1980. The SMM carries a soft X ray polychromator, gamma ray, UV and hard X ray imaging spectrometers, a coronagraph/polarimeter and particle counters. The data gathered thus far indicated that electrical potentials of 25 MeV develop in flares within 2 sec of onset. X ray data show that flares are composed of compressed magnetic loops that have come too close together. Other data have been taken on mass ejection, impacts of electron beams and conduction fronts with the chromosphere and changes in the solar radiant flux due to sunspots. 13 references

  3. Introduction to maximum entropy

    International Nuclear Information System (INIS)

    Sivia, D.S.

    1989-01-01

    The maximum entropy (MaxEnt) principle has been successfully used in image reconstruction in a wide variety of fields. The author reviews the need for such methods in data analysis and shows, by use of a very simple example, why MaxEnt is to be preferred over other regularizing functions. This leads to a more general interpretation of the MaxEnt method, and its use is illustrated with several different examples. Practical difficulties with non-linear problems still remain, this being highlighted by the notorious phase problem in crystallography. He concludes with an example from neutron scattering, using data from a filter difference spectrometer to contrast MaxEnt with a conventional deconvolution. 12 refs., 8 figs., 1 tab

  4. Functional Maximum Autocorrelation Factors

    DEFF Research Database (Denmark)

    Larsen, Rasmus; Nielsen, Allan Aasbjerg

    2005-01-01

    MAF outperforms the functional PCA in concentrating the interesting' spectra/shape variation in one end of the eigenvalue spectrum and allows for easier interpretation of effects. Conclusions. Functional MAF analysis is a useful methods for extracting low dimensional models of temporally or spatially......Purpose. We aim at data where samples of an underlying function are observed in a spatial or temporal layout. Examples of underlying functions are reflectance spectra and biological shapes. We apply functional models based on smoothing splines and generalize the functional PCA in......\\verb+~+\\$\\backslash\\$cite{ramsay97} to functional maximum autocorrelation factors (MAF)\\verb+~+\\$\\backslash\\$cite{switzer85,larsen2001d}. We apply the method to biological shapes as well as reflectance spectra. {\\$\\backslash\\$bf Methods}. MAF seeks linear combination of the original variables that maximize autocorrelation between...

  5. Regularized maximum correntropy machine

    KAUST Repository

    Wang, Jim Jing-Yan; Wang, Yunji; Jing, Bing-Yi; Gao, Xin

    2015-01-01

    In this paper we investigate the usage of regularized correntropy framework for learning of classifiers from noisy labels. The class label predictors learned by minimizing transitional loss functions are sensitive to the noisy and outlying labels of training samples, because the transitional loss functions are equally applied to all the samples. To solve this problem, we propose to learn the class label predictors by maximizing the correntropy between the predicted labels and the true labels of the training samples, under the regularized Maximum Correntropy Criteria (MCC) framework. Moreover, we regularize the predictor parameter to control the complexity of the predictor. The learning problem is formulated by an objective function considering the parameter regularization and MCC simultaneously. By optimizing the objective function alternately, we develop a novel predictor learning algorithm. The experiments on two challenging pattern classification tasks show that it significantly outperforms the machines with transitional loss functions.

  6. Regularized maximum correntropy machine

    KAUST Repository

    Wang, Jim Jing-Yan

    2015-02-12

    In this paper we investigate the usage of regularized correntropy framework for learning of classifiers from noisy labels. The class label predictors learned by minimizing transitional loss functions are sensitive to the noisy and outlying labels of training samples, because the transitional loss functions are equally applied to all the samples. To solve this problem, we propose to learn the class label predictors by maximizing the correntropy between the predicted labels and the true labels of the training samples, under the regularized Maximum Correntropy Criteria (MCC) framework. Moreover, we regularize the predictor parameter to control the complexity of the predictor. The learning problem is formulated by an objective function considering the parameter regularization and MCC simultaneously. By optimizing the objective function alternately, we develop a novel predictor learning algorithm. The experiments on two challenging pattern classification tasks show that it significantly outperforms the machines with transitional loss functions.

  7. Source of Gallium-67 in gastrointestinal contents: concise communication

    International Nuclear Information System (INIS)

    Chen, D.C.; Scheffel, U.; Camargo, E.E.; Tsan, M.F.

    1980-01-01

    The sources of Ga-67 in gastrointestinal (GI) contents, and factors affecting its secretion were studied in rats. To prevent loss of fecal Ga-67, the anus was sutured before intravenous injection of Ga-67 citrate. Secretion of Ga-67 into the contents of the GI tract was rapid, 3, 6, and 9% of the injected dose were secreted at 1, 6, and 24 hr after injection, respectively. In contrast, Ga-67 concentration in the GI tissues remained relatively constant throughout this period. Analysis of Ga-67 contents of various parts of the GI tract revealed that small intestine is its major source, contributing 60% while the bile contributes 20%, large intestine 10%, esophagus and stomach 10%. Feeding had no effect on the Ga-67 secretion into GI contents. In contrast, the serum unbound iron-binding capacity (UIBC) played an important role in the GI secretion of Ga-67; reducing the serum UIBC reduced the Ga-67 secretion into GI contents

  8. Investigation of localization effect in GaN-rich InGaN alloys and ...

    Indian Academy of Sciences (India)

    Abstract. The temperature-dependent PL properties of GaN-rich InxGa1−xN alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples. A and B are different from that in sample C. For samples A and B, In content fluctuations ...

  9. Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

    International Nuclear Information System (INIS)

    Zhang Wei; Xue Jun-Shuai; Zhou Xiao-Wei; Zhang Yue; Liu Zi-Yang; Zhang Jin-Cheng; Hao Yue

    2012-01-01

    An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 10 19 cm −3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Solar maximum mission

    International Nuclear Information System (INIS)

    Ryan, J.

    1981-01-01

    By understanding the sun, astrophysicists hope to expand this knowledge to understanding other stars. To study the sun, NASA launched a satellite on February 14, 1980. The project is named the Solar Maximum Mission (SMM). The satellite conducted detailed observations of the sun in collaboration with other satellites and ground-based optical and radio observations until its failure 10 months into the mission. The main objective of the SMM was to investigate one aspect of solar activity: solar flares. A brief description of the flare mechanism is given. The SMM satellite was valuable in providing information on where and how a solar flare occurs. A sequence of photographs of a solar flare taken from SMM satellite shows how a solar flare develops in a particular layer of the solar atmosphere. Two flares especially suitable for detailed observations by a joint effort occurred on April 30 and May 21 of 1980. These flares and observations of the flares are discussed. Also discussed are significant discoveries made by individual experiments

  12. Expansion of the capabilities of the GA-4 legal weight truck spent fuel shipping cask

    International Nuclear Information System (INIS)

    Zimmer, A.; Razvi, J.; Johnson, L.; Welch, B.; Lancaster, D.

    2004-01-01

    General Atomics (GA) has developed the Model GA-4 Legal Weight Truck Spent Fuel Cask, a high capacity cask for the transport of four PWR spent fuel assemblies, and obtained a Certificate of Compliance (CoC No. 9226) in 1998 from the US Nuclear Regulatory Commission (NRC). The currently authorized contents in this CoC however, are much more limiting than the actual capability of the GA-4 cask to transport spent PWR fuel assemblies. The purpose of this paper is to show how the authorized contents can be significantly expanded by additional analyses without any changes to the physical design of the package. Using burnup credit per ISG-8 Rev. 2, the authorized contents can be significantly expanded by increasing the maximum enrichment as the burnup increases. Use of burnup credit eliminates much of the criticality imposed limits on authorized package contents, but shielding still limits the use of the cask for the higher burnup, short cooled fuel. By downloading to two assemblies and using shielding inserts, even the high burnup fuel with reasonable cooling times can be transported

  13. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  14. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Directory of Open Access Journals (Sweden)

    Xinke Liu

    2017-09-01

    Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  15. DC electrodeposition of NiGa alloy nanowires in AAO template

    Energy Technology Data Exchange (ETDEWEB)

    Maleki, K. [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Sanjabi, S., E-mail: sanjabi@modares.ac.ir [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Alemipour, Z. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2015-12-01

    NiGa alloy nanowires were electrodeposited from an acidic sulfate bath into nanoporous anodized alumina oxide (AAO). This template was fabricated by two-step anodizing. The effects of bath composition and current density were explored on the Ga content of electrodeposited nanowires. The Ga content in the deposits was increased by increasing both Ga in the bath composition and electrodepositing current density. The NiGa alloy nanowires were synthesized for Ga content up to 2–4% without significant improving the magnetic properties. Above this threshold Ga clusters were formed and decreased the magnetic properties of the nanowires. For Ga content of the alloy above 30%, the wires were too short and incomplete. X-ray diffraction patterns reveal that the significant increase of Ga content in the nanowires, changes the FCC crystal structure of Ni to an amorphous phase. It also causes a sizeable increase in the Ga cluster size; these both lead to a significant reduction in the coercivity and the magnetization respectively. - Highlights: • NiGa alloy nanowires were electrodeposited from acidic sulphate baths into nanoporous anodized alumina oxide (AAO) template. • The Ga content was increased by increasing the Ga in the bath composition and electrodeposition current density. • The magnetic parameters such as coercivity and magnetization were not changed for the alloy nanowire with Ga content less than 4%.

  16. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  17. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

    Science.gov (United States)

    Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

    2015-10-01

    Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

  18. Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

    Directory of Open Access Journals (Sweden)

    Derang Cao

    2017-11-01

    Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

  19. Enhanced Optoelectronic Properties of PFO/Fluorol 7GA Hybrid Light Emitting Diodes via Additions of TiO2 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Bandar Ali Al-Asbahi

    2016-09-01

    Full Text Available The effect of TiO2 nanoparticle (NP content on the improvement of poly(9,9′-di-n-octylfluorenyl-2,7-diyl (PFO/Fluorol 7GA organic light emitting diode (OLED performance is demonstrated here. The PFO/Fluorol 7GA blend with specific ratios of TiO2 NPs was prepared via a solution blending method before being spin-coated onto an indium tin oxide (ITO substrate to act as an emissive layer in OLEDs. A thin aluminum layer as top electrode was deposited onto the emissive layer using the electron beam chamber. Improvement electron injection from the cathode was achieved upon incorporation of TiO2 NPs into the PFO/Fluorol 7GA blend, thus producing devices with intense luminance and lower turn-on voltage. The ITO/(PFO/Fluorol 7GA/TiO2/Al OLED device exhibited maximum electroluminescence intensity and luminance at 25 wt % of TiO2 NPs, while maximum luminance efficiency was achieved with 15 wt % TiO2 NP content. In addition, this work proved that the performance of the devices was strongly affected by the surface morphology, which in turn depended on the TiO2 NP content.

  20. The isothermal section at 500 deg. C of the Gd-Tb-Ga ternary system

    International Nuclear Information System (INIS)

    Li, J.Q.; Jian, Y.X.; Ao, W.Q.; Zhuang, Y.H.; He, W.

    2006-01-01

    Phase equilibria in the Gd-Tb-Ga ternary system at 500 deg. C were investigated by X-ray powder diffraction and differential scanning calorimetry. The binary compounds, Gd 5 Ga 3 , Gd 3 Ga 2 , GdGa, GdGa 2 , Tb 5 Ga 3 , TbGa, TbGa 2 and TbGa 3 have been confirmed at 500 deg. C. No ternary compound was found in this system. The isothermal section of this system at 500 deg. C was constructed. It is composed of 7 single-phase regions, 8 two-phase regions and 2 three-phase regions. Four ternary continuous solid solutions (Gd, Tb), (Gd, Tb) 5 Ga 3 , (Gd, Tb)Ga, (Gd, Tb)Ga 2 were formed in this isothermal section. The maximum solid solubilities of Ga in (Gd, Tb) at 500 deg. C is 5.0 at.%. The homogeneity range of (Gd, Tb)Ga 2 is from 20 to 33.3 at.% Ga in Gd-Ga side but limited in Tb-Ga side. The solid solubilities of Ga in the other phases cannot be detected. The Curie temperatures of the Gd 0.6 Tb 0.4-x Ga x alloys increase from 270 to 298 K as x increases from 0 to 0.03

  1. Maximum non-extensive entropy block bootstrap for non-stationary processes

    Czech Academy of Sciences Publication Activity Database

    Bergamelli, M.; Novotný, Jan; Urga, G.

    2015-01-01

    Roč. 91, 1/2 (2015), s. 115-139 ISSN 0001-771X R&D Projects: GA ČR(CZ) GA14-27047S Institutional support: RVO:67985998 Keywords : maximum entropy * bootstrap * Monte Carlo simulations Subject RIV: AH - Economics

  2. Application of the Method of Maximum Likelihood to Identification of Bipedal Walking Robots

    Czech Academy of Sciences Publication Activity Database

    Dolinský, Kamil; Čelikovský, Sergej

    (2017) ISSN 1063-6536 R&D Projects: GA ČR(CZ) GA17-04682S Institutional support: RVO:67985556 Keywords : Control * identification * maximum likelihood (ML) * walking robots Subject RIV: BC - Control Systems Theory Impact factor: 3.882, year: 2016 http://ieeexplore.ieee.org/document/7954032/

  3. Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

    International Nuclear Information System (INIS)

    Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

    2012-01-01

    The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

  4. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  5. Cu deficiency in multi-stage co-evaporated Cu(In,Ga)Se{sub 2} for solar cells applications: Microstructure and Ga in-depth alloying

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R., E-mail: raquel.caballero@helmholtz-berlin.de [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Izquierdo-Roca, V. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Eicke, A. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Industriestrasse 6, 70565 Stuttgart (Germany); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Perez-Rodriguez, A. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Morante, J.R. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain)

    2010-05-15

    The objective of this work is to study the influence of the maximum Cu content during the deposition of Cu(In,Ga)Se{sub 2} (CIGSe) by multi-stage co-evaporation on the phases present in the final film, the film structure and the electrical properties of resulting solar cell devices. The variation of the composition is controlled by the Cu content in stage 2 of the deposition process. The different phases are identified by Raman spectroscopy. The in-depth Ga gradient distribution is investigated by in-depth resolved Raman scattering and secondary neutral mass spectroscopy. The morphology of the devices is studied by scanning electron microscopy. Efficiencies of 9.2% are obtained for ordered-vacancy-compound-based cells with a Cu/(In + Ga) ratio = 0.35, showing the system's flexibility. This work supports the current growth model: a small amount of Cu excess during the absorber process is required to obtain a quality microstructure and high performance devices.

  6. S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

    NARCIS (Netherlands)

    Heijningen, M. van; Visser, G.C.; Wuerfl, J.; Vliet, F.E. van

    2008-01-01

    This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output

  7. S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

    NARCIS (Netherlands)

    van Heijningen, M; Visser, G.C.; Wurfl, J.; van Vliet, Frank Edward

    2008-01-01

    Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz.

  8. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

    KAUST Repository

    Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.

    2015-01-01

    The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46

  9. Ga penetration into polymers

    Czech Academy of Sciences Publication Activity Database

    Hnatowicz, Vladimír; Švorčík, V.; Efimenko, K.; Rybka, V.

    1999-01-01

    Roč. 68, - (1999), s. 357-358 ISSN 0947-8396 R&D Projects: GA ČR GA202/96/0077; GA AV ČR KSK1048601 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.753, year: 1999

  10. First-principle natural band alignment of GaN / dilute-As GaNAs alloy

    Directory of Open Access Journals (Sweden)

    Chee-Keong Tan

    2015-01-01

    Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

  11. Credal Networks under Maximum Entropy

    OpenAIRE

    Lukasiewicz, Thomas

    2013-01-01

    We apply the principle of maximum entropy to select a unique joint probability distribution from the set of all joint probability distributions specified by a credal network. In detail, we start by showing that the unique joint distribution of a Bayesian tree coincides with the maximum entropy model of its conditional distributions. This result, however, does not hold anymore for general Bayesian networks. We thus present a new kind of maximum entropy models, which are computed sequentially. ...

  12. Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kuwahara, Takaaki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kuwano, Noriyuki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kurisu, Akihiko; Okada, Narihito; Tadatomo, Kazuyuki [Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

    2012-03-15

    A microstructure in an InGaN/GaN layer grown at the semipolar direction was observed in detail by means of transmission electron microscopy (TEM) in order to analyze the behaviour of dislocations. A (11 anti 22) GaN layer was first deposited on a maskless r (1 anti 102)-plane patterned-substrate, and then an In{sub x} Ga{sub 1-x}N (x =0.10, 0.24) was overgrown to be about 1 {mu}m in thickness. Dislocations near the interface of InGaN/GaN are classified into several types: 1 Threading dislocations lying on (0001). 2. Misfit dislocations lying on the interface of InGaN/GaN. 3. Dislocations along [1 anti 100] at a certain distance from the interface. 4. Dislocations newly formed at the interface and developing along [11 anti 20] on (0001). 5. Partial dislocations accompanied with a stacking fault on (0001). It was found that the misfit dislocations are arrayed in pairs at the direction along [1 anti 100] on the interface of (11 anti 22). Burgers vector of the misfit dislocations was found to be B = <2 anti 1 anti 13>/3. In case of B = [ anti 1 anti 123]/3, they are edge dislocations. The densities of dislocations and stacking faults increase with the In-content in InGaN. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. New AlGaN/GaN HEMTs employing both a floating gate and a field plate

    International Nuclear Information System (INIS)

    Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

    2010-01-01

    We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

  14. Structural Analysis of InxGa1−xN/GaN MQWs by Different Experimental Methods

    International Nuclear Information System (INIS)

    Ding Bin-Beng; Pan Feng; Fa Tao; Cheng Feng-Feng; Yao Shu-De; Feng Zhe-Chuan

    2011-01-01

    Structural properties of In x Ga 1−x N/GaN multi-quantum wells (MQWs) grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron radiation x-ray diffraction (SRXRD), Rutherford backscattering/channelling (RBS/C) and high-resolution transmission electron microscopy. The sample consists of eight periods of In x Ga 1−x N/GaN wells of 2.1 nm thickness and 8.5 nm thickness of GaN barrier, and the results are very close, which verifies the accuracy of the three methods. The indium content in In x Ga 1−x N/GaN MQWs by SRXRD and RBS/C is estimated, and results are in general the same. By RBS/C random spectra, the indium atomic lattice substitution rate is 94.0%, indicating that almost all indium atoms in In x Ga 1−x N/GaN MQWs are at substitution, that the indium distribution of each layer in In x Ga 1−x N/GaN MQWs is very homogeneous and that the In x Ga 1−x N/GaN MQWs have a very good crystalline quality. It is not accurate to estimate indium content in In x Ga 1−x N/GaN MQWs by photoluminescence (PL) spectra, because the result from the PL experimental method is very different from the results by the SRXRD and RBS/C experimental methods. (cross-disciplinary physics and related areas of science and technology)

  15. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  16. Implantation induced electrical isolation of sulphur doped GaN xAs1-x layers

    International Nuclear Information System (INIS)

    Ahmed, S.; Lin, J.; Haq, A.; Sealy, B.

    2005-01-01

    The study of III-N-V semiconductor alloys, especially GaN x As 1-x has been increasing in the last few years. The strong dependence of the band gap on the nitrogen content has made this material important for a variety of applications, including long wavelength optoelectronic devices and high efficiency solar cells. We report on the effects of sulphur doping implants on the achieved electrical isolation in GaN x As 1-x layers using proton bombardment. Sulphur ions were implanted in MOCVD-grown GaN x As 1-x layers (1.4 μm thick with nominal x = 1%) with multiple energies creating approximately uniform doping profiles in the range of about 1 x 10 18 -5 x 10 19 cm -3 . Several proton implants were performed in order to find the threshold dose (minimum dose to achieve maximum sheet resistivity) for the electrical isolation of n-type GaN x As 1-x layers. Results show that the sheet resistance of n-type layers can be increased by about five orders of magnitude by proton implantation and the threshold dose to convert a conductive layer to a highly resistive one depends on the original free carrier concentration. The study of annealing temperature dependence of sheet resistivity in proton-isolated GaN x As 1-x layers shows that the electrical isolation can be preserved up to 450 and 500 deg. C when the implantation is performed at RT and 77 K with threshold dose, respectively. These results for n-type GaN x As 1-x layers are novel and have ramifications for device engineers

  17. Stacking faults and phase changes in Mg-doped InGaN grown on Si

    International Nuclear Information System (INIS)

    Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

    2009-01-01

    We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Strain-dependent magnetic anisotropy in GaMnAs on InGaAs templates

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim; Glunk, Michael; Schwaiger, Stephan; Dreher, Lukas; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2008-07-01

    We have systematically studied the influence of strain on the magnetic anisotropy of GaMnAs by means of HRXRD reciprocal space mapping and angle-dependent magnetotransport. For this purpose, a series of GaMnAs layers with Mn contents of {proportional_to}5% was grown by low-temperature MBE on relaxed InGaAs/GaAs templates with different In concentrations, enabling us to vary the strain in the GaMnAs layers continuously from tensile to compressive, including the unstrained state. Considering both, as-grown and annealed samples, the anisotropy parameter describing the uniaxial out-of-plane magnetic anisotropy has been found to vary linearly with hole density and strain. As a consequence, the out-of-plane direction gradually undergoes a transition from a magnetic hard axis to a magnetic easy axis from compressive to tensile strain.

  19. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

    2015-02-28

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  20. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  1. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  2. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  3. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  4. Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

    International Nuclear Information System (INIS)

    Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

    2015-01-01

    Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  6. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    International Nuclear Information System (INIS)

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-01-01

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance

  7. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

    Science.gov (United States)

    Zhao, Chuan-Zhen; Zhu, Min-Min; Wang, Jun; Wang, Sha-Sha; Lu, Ke-Qing

    2018-05-01

    The research on the temperature dependence of the band gap energy of the dilute bismuth GaBixAs1-x alloy has been done. It is found that its temperature insensitiveness is due to the enhanced localized character of the valence band state and the small decrease of the temperature coefficient for the conduction band minimum (CBM). The enhanced localized character of the valence band state is the main factor. In order to describe the localized effect of the Bi levels on the valence band, the localized energy is introduced into the Varshni's equation. It is found that the effect of the localized Bi level on the valence band becomes strong with increasing Bi content. In addition, it is found that the pressure dependence of the band gap energy of GaBixAs1-x does not seem to be influenced by the localized Bi levels. It is due to two factors. One is that the pressure dependence of the band gap energy is mainly determined by the D CBM of GaBixAs1-x. The D CBM of GaBixAs1-x is not influenced by the localized Bi levels. The other is that the small variation of the pressure coefficient for the D valence band maximum (VBM) state of GaBixAs1-x can be cancelled by the variation of the pressure coefficient for the D CBM state of GaBixAs1-x.

  8. Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

    Directory of Open Access Journals (Sweden)

    T. F. Gundogdu

    2014-01-01

    Full Text Available We studied a high indium content (0.8 InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.

  9. Optical properties of GaAs

    International Nuclear Information System (INIS)

    Akinlami, J. O.; Ashamu, A. O.

    2013-01-01

    We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6–6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22 × 10 8 m −1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2 × 10 15 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8 × 10 15 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results. (semiconductor physics)

  10. InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2003-01-01

    -dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

  11. Four-junction AlGaAs/GaAs laser power converter

    Science.gov (United States)

    Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

    2018-04-01

    Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

  12. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  13. Maximum Entropy in Drug Discovery

    Directory of Open Access Journals (Sweden)

    Chih-Yuan Tseng

    2014-07-01

    Full Text Available Drug discovery applies multidisciplinary approaches either experimentally, computationally or both ways to identify lead compounds to treat various diseases. While conventional approaches have yielded many US Food and Drug Administration (FDA-approved drugs, researchers continue investigating and designing better approaches to increase the success rate in the discovery process. In this article, we provide an overview of the current strategies and point out where and how the method of maximum entropy has been introduced in this area. The maximum entropy principle has its root in thermodynamics, yet since Jaynes’ pioneering work in the 1950s, the maximum entropy principle has not only been used as a physics law, but also as a reasoning tool that allows us to process information in hand with the least bias. Its applicability in various disciplines has been abundantly demonstrated. We give several examples of applications of maximum entropy in different stages of drug discovery. Finally, we discuss a promising new direction in drug discovery that is likely to hinge on the ways of utilizing maximum entropy.

  14. Sequential pattern recognition by maximum conditional informativity

    Czech Academy of Sciences Publication Activity Database

    Grim, Jiří

    2014-01-01

    Roč. 45, č. 1 (2014), s. 39-45 ISSN 0167-8655 R&D Projects: GA ČR(CZ) GA14-02652S; GA ČR(CZ) GA14-10911S Keywords : Multivariate statistics * Statistical pattern recognition * Sequential decision making * Product mixtures * EM algorithm * Shannon information Subject RIV: IN - Informatics, Computer Sci ence Impact factor: 1.551, year: 2014 http://library.utia.cas.cz/separaty/2014/RO/grim-0428565.pdf

  15. Comparative study of the role of Ga in CIGS solar cells with different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Han, Anjun, E-mail: haj211@mail.sim.ac.cn [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China); Sun, Yun; Zhang, Yi [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Liu, Xiaohui; Meng, Fanying; Liu, Zhengxin [Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China)

    2016-01-01

    Cu(In, Ga)Se{sub 2} (CIGS) thin films with thickness of 1 μm and 2 μm are prepared by co-evaporation process, and the different Ga/(Ga + In) are achieved by varying the temperature of Ga source. The morphology, structure, minimum band gap, and performance of solar cells are comparatively studied. As Ga/(Ga + In) increases, little changes can be observed in the crystal quality of 1 μm CIGS films, while the grain size of 2 μm films decreases significantly. (112) diffraction peak intensities of the 1 μm and 2 μm films decrease and increase, respectively. In the case of the same Ga/(Ga + In), the minimum band gap values of 1 μm films are larger than that of 2 μm films, and the difference becomes large with Ga/(Ga + In) increasing. The minimum band gap values of 1 μm films are more sensitive to variation of the Ga/(Ga + In). As Ga/(Ga + In) increases, a more improvement of the efficiency of solar cells with thickness of 1 μm is obtained due to the large enhancement of the open-circuit voltage, and the efficiency reaches the maximum value when Ga/(Ga + In) is about 0.37. - Highlights: • The role of Ga in CIGS solar cells with different thickness is comparatively studied. • Effect of Ga on the material properties of 1 μm and 2 μm films is totally different. • The minimum band gap of thinned films is more sensitive to variation of Ga/(Ga + In). • Efficiency of thinned solar cells increases more significantly with Ga increasing.

  16. Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

    Directory of Open Access Journals (Sweden)

    Liwei Jin

    2013-01-01

    Full Text Available This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.

  17. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  18. Maximum stellar iron core mass

    Indian Academy of Sciences (India)

    60, No. 3. — journal of. March 2003 physics pp. 415–422. Maximum stellar iron core mass. F W GIACOBBE. Chicago Research Center/American Air Liquide ... iron core compression due to the weight of non-ferrous matter overlying the iron cores within large .... thermal equilibrium velocities will tend to be non-relativistic.

  19. Maximum entropy beam diagnostic tomography

    International Nuclear Information System (INIS)

    Mottershead, C.T.

    1985-01-01

    This paper reviews the formalism of maximum entropy beam diagnostic tomography as applied to the Fusion Materials Irradiation Test (FMIT) prototype accelerator. The same formalism has also been used with streak camera data to produce an ultrahigh speed movie of the beam profile of the Experimental Test Accelerator (ETA) at Livermore. 11 refs., 4 figs

  20. Maximum entropy beam diagnostic tomography

    International Nuclear Information System (INIS)

    Mottershead, C.T.

    1985-01-01

    This paper reviews the formalism of maximum entropy beam diagnostic tomography as applied to the Fusion Materials Irradiation Test (FMIT) prototype accelerator. The same formalism has also been used with streak camera data to produce an ultrahigh speed movie of the beam profile of the Experimental Test Accelerator (ETA) at Livermore

  1. A portable storage maximum thermometer

    International Nuclear Information System (INIS)

    Fayart, Gerard.

    1976-01-01

    A clinical thermometer storing the voltage corresponding to the maximum temperature in an analog memory is described. End of the measurement is shown by a lamp switch out. The measurement time is shortened by means of a low thermal inertia platinum probe. This portable thermometer is fitted with cell test and calibration system [fr

  2. Discrete Maximum Principle for a 1D Problem with Piecewise-Constant Coefficients Solved by hp-FEM

    Czech Academy of Sciences Publication Activity Database

    Vejchodský, Tomáš; Šolín, Pavel

    2007-01-01

    Roč. 15, č. 3 (2007), s. 233-243 ISSN 1570-2820 R&D Projects: GA ČR GP201/04/P021; GA ČR GA102/05/0629 Institutional research plan: CEZ:AV0Z10190503; CEZ:AV0Z20570509 Keywords : discrete maximum principle * hp-FEM * Poisson equation Subject RIV: BA - General Mathematics

  3. Neutron spectra unfolding with maximum entropy and maximum likelihood

    International Nuclear Information System (INIS)

    Itoh, Shikoh; Tsunoda, Toshiharu

    1989-01-01

    A new unfolding theory has been established on the basis of the maximum entropy principle and the maximum likelihood method. This theory correctly embodies the Poisson statistics of neutron detection, and always brings a positive solution over the whole energy range. Moreover, the theory unifies both problems of overdetermined and of underdetermined. For the latter, the ambiguity in assigning a prior probability, i.e. the initial guess in the Bayesian sense, has become extinct by virtue of the principle. An approximate expression of the covariance matrix for the resultant spectra is also presented. An efficient algorithm to solve the nonlinear system, which appears in the present study, has been established. Results of computer simulation showed the effectiveness of the present theory. (author)

  4. Study of hydrogenation of Sm{sub 2}Fe{sub 17-y}Ga{sub y} by means of X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Teresiak, A.; Uhlemann, M.; Kubis, M.; Gebel, B.; Mattern, N.; Mueller, K.-H. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany)

    2000-06-06

    The hydrogenation process of Sm{sub 2}Fe{sub 17-y}Ga{sub y}(y=0-2) was studied. X-ray investigations show a decreasing hydrogen solubility in the intermetallic alloy with increasing Ga-content from 4.0{+-}0.3 atoms per formula unit for Sm{sub 2}Fe{sub 17} to 2.85{+-}0.05 for Sm{sub 2}Fe{sub 15}Ga{sub 2}. The larger Ga atoms reduce the size of the interstitial sites and thereby the maximum hydrogen concentration is decreased. The behaviour of the lattice parameters a and c with increasing Ga content points to a changed hydrogen distribution on the interstitial sites, becoming more statistical. In situ observations by means of high temperature X-ray diffraction show that the hydrogen absorption process is diffusion controlled. The hydrogen absorption starts at an annealing temperature of 120-140 C in all cases. The solubility of hydrogen decreases with increasing temperature. The hydrogen is completely desorbed above 350 C in all cases. The absorption/desorption process is reversible between room temperature and 400 C. Annealing at temperatures above 400 C leads to the decomposition of the Sm{sub 2}Fe{sub 17} phase, indicated by emerging of {alpha}-Fe. The formation of SmH{sub x} is established at 600 C. The decomposition temperature increases with increasing Ga-content. Up to 750 C, only Sm{sub 2}Fe{sub 17} is completely decomposed. (orig.)

  5. Characterization of negative bias-illumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content

    Science.gov (United States)

    Kim, Kyeong-Ah; Park, Min-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2015-12-01

    We fabricated fully transparent top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) while varying the oxygen partial pressure (PO2) during IGZO sputtering deposition and characterized the negative-bias-illumination stress (NBIS) stabilities of these devices before and after a post-annealing process. When the PO2 was chosen to be 2% and the device was annealed in oxygen ambient conditions at 200 °C, the field-effect mobility in the saturation region, subthreshold swing, and on/off current ratio were obtained to be approximately 15.3 cm2 V-1 s-1, 0.14 V/dec, and 8.7 × 109, respectively. Conversely, the TFT did not show the transfer characteristics when the PO2 was chosen to be 0% and no annealing process was performed. The shifts in the turn-on voltages (ΔVon) under the NBIS conditions with red, green, and blue lights were investigated for the fabricated IGZO TFTs. The ΔVon followed the stretched-exponential relationship and was found to be closely related to the concentration of oxygen vacancies and oxygen-related defects in the IGZO channel and at the interfaces. The NBIS stabilities were improved by increasing the PO2 and performing the annealing process in oxygen ambient conditions.

  6. Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

    Science.gov (United States)

    Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-06-01

    We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

  7. On Maximum Entropy and Inference

    Directory of Open Access Journals (Sweden)

    Luigi Gresele

    2017-11-01

    Full Text Available Maximum entropy is a powerful concept that entails a sharp separation between relevant and irrelevant variables. It is typically invoked in inference, once an assumption is made on what the relevant variables are, in order to estimate a model from data, that affords predictions on all other (dependent variables. Conversely, maximum entropy can be invoked to retrieve the relevant variables (sufficient statistics directly from the data, once a model is identified by Bayesian model selection. We explore this approach in the case of spin models with interactions of arbitrary order, and we discuss how relevant interactions can be inferred. In this perspective, the dimensionality of the inference problem is not set by the number of parameters in the model, but by the frequency distribution of the data. We illustrate the method showing its ability to recover the correct model in a few prototype cases and discuss its application on a real dataset.

  8. Atomic Charges and Chemical Bonding in Y-Ga Compounds

    Directory of Open Access Journals (Sweden)

    Yuri Grin

    2018-02-01

    Full Text Available A negative deviation from Vegard rule for the average atomic volume versus yttrium content was found from experimental crystallographic information about the binary compounds of yttrium with gallium. Analysis of the electron density (DFT calculations employing the quantum theory of atoms in molecules revealed an increase in the atomic volumes of both Y and Ga with the increase in yttrium content. The non-linear increase is caused by the strengthening of covalent Y-Ga interactions with stronger participation of genuine penultimate shell electrons (4d electrons of yttrium in the valence region. Summing the calculated individual atomic volumes for a unit cell allows understanding of the experimental trend. With increasing yttrium content, the polarity of the Y-Ga bonding and, thus its ionicity, rises. The covalency of the atomic interactions in Y-Ga compounds is consistent with their delocalization from two-center to multi-center ones.

  9. Maximum Water Hammer Sensitivity Analysis

    OpenAIRE

    Jalil Emadi; Abbas Solemani

    2011-01-01

    Pressure waves and Water Hammer occur in a pumping system when valves are closed or opened suddenly or in the case of sudden failure of pumps. Determination of maximum water hammer is considered one of the most important technical and economical items of which engineers and designers of pumping stations and conveyance pipelines should take care. Hammer Software is a recent application used to simulate water hammer. The present study focuses on determining significance of ...

  10. Maximum Gene-Support Tree

    Directory of Open Access Journals (Sweden)

    Yunfeng Shan

    2008-01-01

    Full Text Available Genomes and genes diversify during evolution; however, it is unclear to what extent genes still retain the relationship among species. Model species for molecular phylogenetic studies include yeasts and viruses whose genomes were sequenced as well as plants that have the fossil-supported true phylogenetic trees available. In this study, we generated single gene trees of seven yeast species as well as single gene trees of nine baculovirus species using all the orthologous genes among the species compared. Homologous genes among seven known plants were used for validation of the finding. Four algorithms—maximum parsimony (MP, minimum evolution (ME, maximum likelihood (ML, and neighbor-joining (NJ—were used. Trees were reconstructed before and after weighting the DNA and protein sequence lengths among genes. Rarely a gene can always generate the “true tree” by all the four algorithms. However, the most frequent gene tree, termed “maximum gene-support tree” (MGS tree, or WMGS tree for the weighted one, in yeasts, baculoviruses, or plants was consistently found to be the “true tree” among the species. The results provide insights into the overall degree of divergence of orthologous genes of the genomes analyzed and suggest the following: 1 The true tree relationship among the species studied is still maintained by the largest group of orthologous genes; 2 There are usually more orthologous genes with higher similarities between genetically closer species than between genetically more distant ones; and 3 The maximum gene-support tree reflects the phylogenetic relationship among species in comparison.

  11. Maximum organic carbon limits at different melter feed rates (U)

    International Nuclear Information System (INIS)

    Choi, A.S.

    1995-01-01

    This report documents the results of a study to assess the impact of varying melter feed rates on the maximum total organic carbon (TOC) limits allowable in the DWPF melter feed. Topics discussed include: carbon content; feed rate; feed composition; melter vapor space temperature; combustion and dilution air; off-gas surges; earlier work on maximum TOC; overview of models; and the results of the work completed

  12. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

    Science.gov (United States)

    Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

    2017-07-21

    The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  13. LCLS Maximum Credible Beam Power

    International Nuclear Information System (INIS)

    Clendenin, J.

    2005-01-01

    The maximum credible beam power is defined as the highest credible average beam power that the accelerator can deliver to the point in question, given the laws of physics, the beam line design, and assuming all protection devices have failed. For a new accelerator project, the official maximum credible beam power is determined by project staff in consultation with the Radiation Physics Department, after examining the arguments and evidence presented by the appropriate accelerator physicist(s) and beam line engineers. The definitive parameter becomes part of the project's safety envelope. This technical note will first review the studies that were done for the Gun Test Facility (GTF) at SSRL, where a photoinjector similar to the one proposed for the LCLS is being tested. In Section 3 the maximum charge out of the gun for a single rf pulse is calculated. In Section 4, PARMELA simulations are used to track the beam from the gun to the end of the photoinjector. Finally in Section 5 the beam through the matching section and injected into Linac-1 is discussed

  14. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  15. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    International Nuclear Information System (INIS)

    Grady, R; Bayram, C

    2017-01-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

  16. Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

    Science.gov (United States)

    Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

    2005-07-01

    Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

  17. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Directory of Open Access Journals (Sweden)

    M. P. Young

    2014-11-01

    Full Text Available We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 μeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  18. Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

    International Nuclear Information System (INIS)

    Ghazi, Haddou El; Jorio, Anouar; Zorkani, Izeddine

    2013-01-01

    Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potential barrier. The pressure dependence of wire length, effective mass, dielectric constant and potential barrier are taken into account. Numerical results show that: (i) the binding energy is strongly affected by the wire length and the external applied pressure and (ii) its maximum moves to the narrow wire in particular for height pressure.

  19. Capture and release of carriers in InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Porte, Henrik; Daghestani, N.

    2009-01-01

    We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD...... states is observed. The increase of the decay time constant with increasing pump fluence is attributed to filling of the QD states. In the case of resonantly excitation into the QD ground state a maximum conductivity is reached 35 ps after photoexcitation, which is assigned to the release of carriers...

  20. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  1. 67Ga lung scan

    International Nuclear Information System (INIS)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.; Pick, R.

    1977-01-01

    Twenty-three patients with clinical signs of pulmonary embolic disease and lung infiltrates were studied to determine the value of gallium citrate 67 Ga lung scan in differentiating embolic from inflammatory lung disease. In 11 patients without angiographically proved embolism, only seven had corresponding ventilation-perfusion defects compatible with inflammatory disease. In seven of these 11 patients, the 67 Ga concentration indicated inflammatory disease. In the 12 patients with angiographically proved embolic disease, six had corresponding ventilation-perfusion defects compatible with inflammatory disease. None had an accumulation of 67 Ga in the area of pulmonary infiltrate. Thus, ventilation-perfusion lung scans are of limited value when lung infiltrates are present. In contrast, the accumulation of 67 Ga in the lung indicates an inflammatory process. Gallium imaging can help select those patients with lung infiltrates who need angiography

  2. Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

    International Nuclear Information System (INIS)

    Capotondi, F.; Biasiol, G.; Ercolani, D.; Grillo, V.; Carlino, E.; Romanato, F.; Sorba, L.

    2005-01-01

    The relationship between structural and low-temperature transport properties is explored for In x Al 1 - x As/In x Ga 1 - x As metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m 2 /V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties

  3. Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

    International Nuclear Information System (INIS)

    Zhao Wan-Ru; Zhang Jiang-Yong; Zhang Bao-Ping; Weng Guo-En; Liang Ming-Ming; Li Zeng-Cheng; Liu Jian-Ping

    2014-01-01

    Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15–300 K), the PL peak energy shows an anomalous V-shaped (redshift—blueshift) variation instead of an S-shaped (redshift—blueshift—redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease—increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MQWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MQWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9 meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content

  4. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  5. Structure and properties of GeS2-Ga2S3-CdI2 chalcohalide glasses

    International Nuclear Information System (INIS)

    Guo Haitao; Zhai Yanbo; Tao Haizheng; Dong Guoping; Zhao Xiujian

    2007-01-01

    Chalcohalide glasses in the GeS 2 -Ga 2 S 3 -CdI 2 pseudo-ternary system were prepared by 3-5N pure raw materials. Structures of these glasses were studied with Raman spectroscopy. Several properties, namely, glass transition temperature, optical transmission, density and microhardness have also been measured. Based on the Raman spectra, it can be speculated that the glass network is mainly constituted by [GeS 4 ], [GaS 4 ] tetrahedra with some mixed-anion tetrahedra [S 3 GeI], [S 2 GeI 2 ] and [S 3 GaI], which are interconnected by bridging sulfurs and/or short S-S chains. In the glasses with little CdI 2 , some part of Ge(Ga) exists in the forms of the ethane-like units [S 3 (Ga)Ge-Ge(Ga)S 3 ] because of the lack of sulfur, but the amount of these units will decrease with the addition of CdI 2 . Additionally, in the glasses with high content of CdI 2 , some [CdI n ] structural units (s.u.) will be formed and dispersed homogenously in glass network. These novel glasses have relatively high glass transition temperatures (T g ranges from 512 to 670 K), good thermal stabilities (the maximum of difference between T x and T g is 185 K) and UV-vis optical transmission, large densities (d ranges from 3.162 to 3.863 g/cm 3 ) and microhardness (large than 150 kg/mm 2 generally). All properties evolutions follow the structural variations

  6. Generic maximum likely scale selection

    DEFF Research Database (Denmark)

    Pedersen, Kim Steenstrup; Loog, Marco; Markussen, Bo

    2007-01-01

    in this work is on applying this selection principle under a Brownian image model. This image model provides a simple scale invariant prior for natural images and we provide illustrative examples of the behavior of our scale estimation on such images. In these illustrative examples, estimation is based......The fundamental problem of local scale selection is addressed by means of a novel principle, which is based on maximum likelihood estimation. The principle is generally applicable to a broad variety of image models and descriptors, and provides a generic scale estimation methodology. The focus...

  7. Growth, yield and quality responses to gibberellic acid (GA 3 ) of ...

    African Journals Online (AJOL)

    With regard to fruit quality, the application of GA3 at 50 mg/L increased total soluble solids (TSS), total sugar, total biomass and total flavonoids content in the fruits by 112, 97, 45 and 92% compared with the control treatment. In addition, anthocyanin content, total phenol and antioxidant activity was higher in GA3 treated ...

  8. Extreme Maximum Land Surface Temperatures.

    Science.gov (United States)

    Garratt, J. R.

    1992-09-01

    There are numerous reports in the literature of observations of land surface temperatures. Some of these, almost all made in situ, reveal maximum values in the 50°-70°C range, with a few, made in desert regions, near 80°C. Consideration of a simplified form of the surface energy balance equation, utilizing likely upper values of absorbed shortwave flux (1000 W m2) and screen air temperature (55°C), that surface temperatures in the vicinity of 90°-100°C may occur for dry, darkish soils of low thermal conductivity (0.1-0.2 W m1 K1). Numerical simulations confirm this and suggest that temperature gradients in the first few centimeters of soil may reach 0.5°-1°C mm1 under these extreme conditions. The study bears upon the intrinsic interest of identifying extreme maximum temperatures and yields interesting information regarding the comfort zone of animals (including man).

  9. Maximum vehicle cabin temperatures under different meteorological conditions

    Science.gov (United States)

    Grundstein, Andrew; Meentemeyer, Vernon; Dowd, John

    2009-05-01

    A variety of studies have documented the dangerously high temperatures that may occur within the passenger compartment (cabin) of cars under clear sky conditions, even at relatively low ambient air temperatures. Our study, however, is the first to examine cabin temperatures under variable weather conditions. It uses a unique maximum vehicle cabin temperature dataset in conjunction with directly comparable ambient air temperature, solar radiation, and cloud cover data collected from April through August 2007 in Athens, GA. Maximum cabin temperatures, ranging from 41-76°C, varied considerably depending on the weather conditions and the time of year. Clear days had the highest cabin temperatures, with average values of 68°C in the summer and 61°C in the spring. Cloudy days in both the spring and summer were on average approximately 10°C cooler. Our findings indicate that even on cloudy days with lower ambient air temperatures, vehicle cabin temperatures may reach deadly levels. Additionally, two predictive models of maximum daily vehicle cabin temperatures were developed using commonly available meteorological data. One model uses maximum ambient air temperature and average daily solar radiation while the other uses cloud cover percentage as a surrogate for solar radiation. From these models, two maximum vehicle cabin temperature indices were developed to assess the level of danger. The models and indices may be useful for forecasting hazardous conditions, promoting public awareness, and to estimate past cabin temperatures for use in forensic analyses.

  10. Effect of barrier height and indium composition on the internal quantum efficiency of (In)AlGaN multiple quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Ledentsov, Nikolay Jr.; Reich, Christoph; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Kolbe, Tim; Lobo Ploch, Neysha; Rass, Jens [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Kueller, Viola [Ferdinand-Braun-Institut, Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut, Berlin (Germany)

    2013-07-01

    We studied (In)AlGaN multiple quantum wells (MQWs) emitting in the UV-B spectral region with photoluminescence and electroluminescence spectroscopy. The internal quantum efficiency (IQE) was determined by temperature dependent measurements (5 K-300 K). The quantum confined Stark effect (QCSE) was investigated by studying the shift of the emission energy with increasing excitation power density. In the first series, Al{sub 0.27}Ga{sub 0.73}N MQWs with different Al{sub x}Ga{sub 1-x}N barriers (0.32content increased the IQE due to improved carrier confinement. A maximum of the IQE of 24 % at x=0.4 was obtained. Further increase of the Al content in the barriers decreased the IQE due to a stronger QCSE. In the second series, quaternary InAlGaN QWs were investigated. Due to In incorporation, room temperature emission energy shifted from 4.3 eV to 3.9 eV. At low temperatures two peaks were observed. The lower energetic peak was attributed to In-rich clusters. Influence of the In segregation is discussed.

  11. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  12. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

    2011-01-01

    peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

  13. Triple Junction InGaP/GaAs/Ge Solar Cell Optimization: The Design Parameters for a 36.2% Efficient Space Cell Using Silvaco ATLAS Modeling & Simulation

    OpenAIRE

    Tsutagawa, Michael H.; Michael, Sherif

    2009-01-01

    This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses.

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9 eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the Γ(k = 0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407 meV above the GaAs valence band maximum.

  15. System for memorizing maximum values

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1992-08-01

    The invention discloses a system capable of memorizing maximum sensed values. The system includes conditioning circuitry which receives the analog output signal from a sensor transducer. The conditioning circuitry rectifies and filters the analog signal and provides an input signal to a digital driver, which may be either linear or logarithmic. The driver converts the analog signal to discrete digital values, which in turn triggers an output signal on one of a plurality of driver output lines n. The particular output lines selected is dependent on the converted digital value. A microfuse memory device connects across the driver output lines, with n segments. Each segment is associated with one driver output line, and includes a microfuse that is blown when a signal appears on the associated driver output line.

  16. Remarks on the maximum luminosity

    Science.gov (United States)

    Cardoso, Vitor; Ikeda, Taishi; Moore, Christopher J.; Yoo, Chul-Moon

    2018-04-01

    The quest for fundamental limitations on physical processes is old and venerable. Here, we investigate the maximum possible power, or luminosity, that any event can produce. We show, via full nonlinear simulations of Einstein's equations, that there exist initial conditions which give rise to arbitrarily large luminosities. However, the requirement that there is no past horizon in the spacetime seems to limit the luminosity to below the Planck value, LP=c5/G . Numerical relativity simulations of critical collapse yield the largest luminosities observed to date, ≈ 0.2 LP . We also present an analytic solution to the Einstein equations which seems to give an unboundedly large luminosity; this will guide future numerical efforts to investigate super-Planckian luminosities.

  17. Maximum mutual information regularized classification

    KAUST Repository

    Wang, Jim Jing-Yan

    2014-09-07

    In this paper, a novel pattern classification approach is proposed by regularizing the classifier learning to maximize mutual information between the classification response and the true class label. We argue that, with the learned classifier, the uncertainty of the true class label of a data sample should be reduced by knowing its classification response as much as possible. The reduced uncertainty is measured by the mutual information between the classification response and the true class label. To this end, when learning a linear classifier, we propose to maximize the mutual information between classification responses and true class labels of training samples, besides minimizing the classification error and reducing the classifier complexity. An objective function is constructed by modeling mutual information with entropy estimation, and it is optimized by a gradient descend method in an iterative algorithm. Experiments on two real world pattern classification problems show the significant improvements achieved by maximum mutual information regularization.

  18. Scintillation counter, maximum gamma aspect

    International Nuclear Information System (INIS)

    Thumim, A.D.

    1975-01-01

    A scintillation counter, particularly for counting gamma ray photons, includes a massive lead radiation shield surrounding a sample-receiving zone. The shield is disassembleable into a plurality of segments to allow facile installation and removal of a photomultiplier tube assembly, the segments being so constructed as to prevent straight-line access of external radiation through the shield into radiation-responsive areas. Provisions are made for accurately aligning the photomultiplier tube with respect to one or more sample-transmitting bores extending through the shield to the sample receiving zone. A sample elevator, used in transporting samples into the zone, is designed to provide a maximum gamma-receiving aspect to maximize the gamma detecting efficiency. (U.S.)

  19. Maximum mutual information regularized classification

    KAUST Repository

    Wang, Jim Jing-Yan; Wang, Yi; Zhao, Shiguang; Gao, Xin

    2014-01-01

    In this paper, a novel pattern classification approach is proposed by regularizing the classifier learning to maximize mutual information between the classification response and the true class label. We argue that, with the learned classifier, the uncertainty of the true class label of a data sample should be reduced by knowing its classification response as much as possible. The reduced uncertainty is measured by the mutual information between the classification response and the true class label. To this end, when learning a linear classifier, we propose to maximize the mutual information between classification responses and true class labels of training samples, besides minimizing the classification error and reducing the classifier complexity. An objective function is constructed by modeling mutual information with entropy estimation, and it is optimized by a gradient descend method in an iterative algorithm. Experiments on two real world pattern classification problems show the significant improvements achieved by maximum mutual information regularization.

  20. Maximum entropy analysis of cosmic ray composition

    Czech Academy of Sciences Publication Activity Database

    Nosek, D.; Ebr, Jan; Vícha, Jakub; Trávníček, Petr; Nosková, J.

    2016-01-01

    Roč. 76, Mar (2016), s. 9-18 ISSN 0927-6505 R&D Projects: GA ČR(CZ) GA14-17501S Institutional support: RVO:68378271 Keywords : ultra-high energy cosmic rays * extensive air showers * cosmic ray composition Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 3.257, year: 2016

  1. Dielectric function and electro-optical properties of (Al,Ga)N/GaN-heterostructures; Dielektrische Funktion und elektrooptische Eigenschaften von (Al,Ga)N/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Buchheim, Carsten

    2010-04-23

    In this work extensive investigations on nitride semiconductors by optical spectroscopy are presented. The ordinary and the extraordinary component of the dielectric function of GaN in the spectral range from 1.2 to 9.8 eV is shown for the first time. It is demonstrated, that the transparent spectral range is clearly influenced by higher energetic critical points of the band structure. The optical selection rules for GaN and AlN are verified considering the actual strain state. The change of the valence band ordering of AlN in comparison to GaN is proven and the crystal field splitting is estimated for AlN. The ordinary dielectric function of AlGaN is determined for different Al contents. The data are used for developing an analytical model, which includes excitonic effects and bowings. It allows the calculation of the dielectric function for arbitrary alloy compositions. (GaN/)AlGaN/GaN heterostructures are investigated by spectroscopic ellipsometry as well as by photoreflectance and electroreflectance. The optical data yields the electric field strengths of the individual layers to determine the density of the two-dimensional carrier gases at the heterointerfaces with high accuracy. The surface potential is calculated from the combination of experiments and Schroedinger-Poisson calculations. Its dependency on the Al content is quantified. For the special case of thick cap layers the coexistence of electron and hole gases in one sample is experimentally proven for the first time. Several interband transitions between quantized states in AlN/GaN superlattices are observed by electroreflectance. The comparison to quantum mechanical calculations demonstrates the influence of strain and electrical fields (quantum confined Stark effect). For both the ratio of the thicknesses of quantum wells and barriers is crucial. From the dielectric function of the superlattices it becomes obvious, that quantum size effects are not only important for the vicinity of the bandgap, but

  2. Anti-nutrient components of guinea grass ( Panicum maximum ...

    African Journals Online (AJOL)

    Yomi

    2012-01-31

    Jan 31, 2012 ... A true measure of forage quality is animal ... The anti-nutritional contents of a pasture could be ... nutrient factors in P. maximum; (2) assess the effect of nitrogen ..... 3. http://www.clemson.edu/Fairfield/local/news/quality.

  3. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  4. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

    Energy Technology Data Exchange (ETDEWEB)

    Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

    2013-08-31

    AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

  5. Efficient InGaP/GaAs DJ solar cell with double back surface field layer

    Directory of Open Access Journals (Sweden)

    G.P. Mishra

    2015-09-01

    Full Text Available An effective and optimised BSF layer is an important layer in both single junction and multijunction solar cells. In this work the use of the double layer BSF for top cell with their varied thicknesses is investigated on GaInP/GaAs DJ solar cell using the computational numerical modelling TCAD tool Silvaco ATLAS. The detail photo-generation rates are determined. The major modelling stages are described and the simulation results are validated with published experimental data in order to describe the accuracy of our results produced. For this optimized cell structure, the maximum Jsc = 17.33 mA/cm2, Voc = 2.66 V, and fill factor (FF = 88.67% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 34.52% (1 sun and 39.15% (1000 suns.

  6. Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

    International Nuclear Information System (INIS)

    Beeler, M.; Bellet-Amalric, E.; Monroy, E.; Bougerol, C.

    2014-01-01

    THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

  7. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  8. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

    Directory of Open Access Journals (Sweden)

    Syed Ahmed Al Muyeed

    2017-10-01

    Full Text Available Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW using AlGaN interlayers (ILs. The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm, and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (202¯5 reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination.

  9. Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate

    International Nuclear Information System (INIS)

    Kumar, Praveen; Kuyyalil, Jithesh; Shivaprasad, S. M.

    2010-01-01

    High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7x7. Three stable surface phases induced by Ga adsorption, viz., (1x1), (6.3x6.3), and (√3x√3)R30 deg., are employed as templates to grow epitaxial (0001) GaN thin films. GaN grown on Si(√3x√3)R30 deg. -Ga is found to be highly crystalline with intense (0002) x-ray diffraction and photoluminescence peaks with low full width at half maximum, low surface roughness, and stoichiometric surface composition. The high quality of these GaN films formed at a low temperature of 400 deg. C is explained by the integral (x2) lattice matching between the unit cell of GaN and the (√3x√3) phase. The experiments demonstrate a plausible approach of adsorbate induced surface modifications as templates for III-V hetroepitaxy on Si surfaces.

  10. Maximum entropy and Bayesian methods

    International Nuclear Information System (INIS)

    Smith, C.R.; Erickson, G.J.; Neudorfer, P.O.

    1992-01-01

    Bayesian probability theory and Maximum Entropy methods are at the core of a new view of scientific inference. These 'new' ideas, along with the revolution in computational methods afforded by modern computers allow astronomers, electrical engineers, image processors of any type, NMR chemists and physicists, and anyone at all who has to deal with incomplete and noisy data, to take advantage of methods that, in the past, have been applied only in some areas of theoretical physics. The title workshops have been the focus of a group of researchers from many different fields, and this diversity is evident in this book. There are tutorial and theoretical papers, and applications in a very wide variety of fields. Almost any instance of dealing with incomplete and noisy data can be usefully treated by these methods, and many areas of theoretical research are being enhanced by the thoughtful application of Bayes' theorem. Contributions contained in this volume present a state-of-the-art overview that will be influential and useful for many years to come

  11. Aplicação foliar de cálcio em pessegueiro na Serra Gaúcha: avaliação do teor de nutrientes na folha, no fruto e produção Foliar application of calcium in peach in Serra Gaúcha: evaluation of content of nutrients in the leaf, fruit and yield

    Directory of Open Access Journals (Sweden)

    Gustavo Brunetto

    2008-06-01

    calcium in Peach tree in the Southern Brasil is used during productive cycle, without any information about calcium content and other nutrients in the leaves, fruits and yield. Two experiments were carried out in 2003/2004 to evaluate the effect of foliar application of different sources of calcium in its content and other nutrients in the leaf, fruit and yield of peach trees, Chimarrita cultivar, at an Haplumbrept soil in Southern Brazil, Pinto Bandeira city. The treatments in the experiment 1 were three foliar applications of calcium chloride, concentrations 0 (water, 0.5, 1.0 and 2.0%.Experiment 2 were three foliar applications of calcium nitrate, concentrations 0 (water, 0.5, 1.0 and 2.0%. A randomized block experimental design was used with three replications and three plants for treatment. Leaves were collected, oven-dried and analyzed total calcium, nitrogen, potassium and magnesium. In the maturation, fruits were collected and determined the mass, yield and total content of calcium, nitrogen, potassium and magnesium. The results showed that foliar applications of calcium in the form of chloride and nitrate in peach tree, increase calcium content in the leaves, but did not affect the content of nitrogen, potassium and magnesium in the leaves, content of calcium, nitrogen, potassium and magnesium in the fruit and yield.

  12. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  13. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    International Nuclear Information System (INIS)

    Kaniewska, M.; Engstroem, O.

    2007-01-01

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

  14. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

    2007-09-15

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

  15. Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

    International Nuclear Information System (INIS)

    Chakraborty, Apurba; Biswas, Dhrubes

    2015-01-01

    Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

  16. Discrete maximum principle for FE solutions of the diffusion-reaction problem on prismatic meshes

    Czech Academy of Sciences Publication Activity Database

    Hannukainen, A.; Korotov, S.; Vejchodský, Tomáš

    2009-01-01

    Roč. 226, č. 2 (2009), s. 275-287 ISSN 0377-0427 R&D Projects: GA AV ČR IAA100760702 Institutional research plan: CEZ:AV0Z10190503 Keywords : diffusion-reaction problem * maximum principle * prismatic finite elements Subject RIV: BA - General Mathematics Impact factor: 1.292, year: 2009

  17. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  18. Maximum entropy principal for transportation

    International Nuclear Information System (INIS)

    Bilich, F.; Da Silva, R.

    2008-01-01

    In this work we deal with modeling of the transportation phenomenon for use in the transportation planning process and policy-impact studies. The model developed is based on the dependence concept, i.e., the notion that the probability of a trip starting at origin i is dependent on the probability of a trip ending at destination j given that the factors (such as travel time, cost, etc.) which affect travel between origin i and destination j assume some specific values. The derivation of the solution of the model employs the maximum entropy principle combining a priori multinomial distribution with a trip utility concept. This model is utilized to forecast trip distributions under a variety of policy changes and scenarios. The dependence coefficients are obtained from a regression equation where the functional form is derived based on conditional probability and perception of factors from experimental psychology. The dependence coefficients encode all the information that was previously encoded in the form of constraints. In addition, the dependence coefficients encode information that cannot be expressed in the form of constraints for practical reasons, namely, computational tractability. The equivalence between the standard formulation (i.e., objective function with constraints) and the dependence formulation (i.e., without constraints) is demonstrated. The parameters of the dependence-based trip-distribution model are estimated, and the model is also validated using commercial air travel data in the U.S. In addition, policy impact analyses (such as allowance of supersonic flights inside the U.S. and user surcharge at noise-impacted airports) on air travel are performed.

  19. High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

    Science.gov (United States)

    Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

    2010-05-01

    The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

  20. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

    2014-01-01

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  1. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

    2014-05-15

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  2. Characterization of self-organized InGaN/GaN quantum dots by Diffraction Anomalous Fine Structure (DAFS)

    International Nuclear Information System (INIS)

    Piskorska, E.; Holy, V.; Siebert, M.; Schmidt, Th.; Falta, J.; Yamaguchi, T.; Hommel, D.; Renevier, H.

    2006-01-01

    The local chemical composition of InGaN quantum dots grown by a MBE method on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms at different positions in the dots. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. (author) [pl

  3. Iron clustering in GaSe epilayers grown on GaAs(111)B

    International Nuclear Information System (INIS)

    Moraes, A R de; Mosca, D H; Mattoso, N; Guimaraes, J L; Klein, J J; Schreiner, W H; Souza, P E N de; Oliveira, A J A de; Vasconcellos, M A Z de; Demaille, D; Eddrief, M; Etgens, V H

    2006-01-01

    In this paper we report on the structural, morphological and magnetic properties of semiconducting GaSe epilayers, grown by molecular beam epitaxy, doped to different iron contents (ranging from 1 to 22 at.% Fe). Our results indicate that iron forms metallic Fe nanoparticles with diameters ranging from 1 to 20 nm embedded in the crystalline GaSe matrix. The Fe incorporation proceeds by segregation and agglomeration and induces a progressive disruption of the lamellar GaSe epilayers. The magnetization as a function of the temperature for zero-field cooling with the magnetic field parallel to the surface of the sample provides evidence of superparamagnetic behaviour of the nanoparticles. Cathodoluminescence experiments performed at room temperature reveal semiconducting behaviour even for samples with Fe concentrations as high as 20 at.%

  4. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

    International Nuclear Information System (INIS)

    Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

    2011-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. 2015 Lowndes County (GA) Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — TASK NAME: NOAA OCM Lidar for Lowndes County, GA with the option to Collect Lidar in Cook and Tift Counties, GA Lidar Data Acquisition and Processing Production Task...

  6. Effect of Liquid Ga on Metal Surfaces: Characterization of Morphology and Chemical Composition of Metals Heated in Liquid Ga

    Directory of Open Access Journals (Sweden)

    Eun Je Lee

    2013-01-01

    Full Text Available This study investigates the effect of liquid gallium (Ga on metal foils made of titanium (Ti, niobium (Nb, and molybdenum (Mo. The Ti, Nb, and Mo foils were heated in liquid Ga at 120°C for a maximum of two weeks. After heating, the changes in the morphology and the chemical composition of the metal foils were analyzed by using a field emission scanning electron microscope, energy-dispersive X-ray spectrometer, X-ray diffractometer, and X-ray photoelectron spectrometer. The results of the analysis indicated that the Nb foil showed the minimum adhesion of liquid Ga to the surface while the maximum amount of liquid Ga was observed to adhere to the Ti foil. In addition, the Nb foil was oxidized and the Mo foil was reduced during the heating process. Considering these effects, we conclude that Mo may be used as an alternative encapsulation material for Ga in addition to Nb, which is used as the conventional encapsulation material, due to its chemical resistance against oxidation in hot liquid Ga.

  7. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kasanaboina, Pavan Kumar [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Ahmad, Estiak [Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Li, Jia; Iyer, Shanthi [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Reynolds, C. Lewis; Liu, Yang [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  8. Crystallization kinetics of Ga metallic nano-droplets under As flux

    International Nuclear Information System (INIS)

    Bietti, S; Somaschini, C; Sanguinetti, S

    2013-01-01

    We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid–solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures. (paper)

  9. Last Glacial Maximum Salinity Reconstruction

    Science.gov (United States)

    Homola, K.; Spivack, A. J.

    2016-12-01

    It has been previously demonstrated that salinity can be reconstructed from sediment porewater. The goal of our study is to reconstruct high precision salinity during the Last Glacial Maximum (LGM). Salinity is usually determined at high precision via conductivity, which requires a larger volume of water than can be extracted from a sediment core, or via chloride titration, which yields lower than ideal precision. It has been demonstrated for water column samples that high precision density measurements can be used to determine salinity at the precision of a conductivity measurement using the equation of state of seawater. However, water column seawater has a relatively constant composition, in contrast to porewater, where variations from standard seawater composition occur. These deviations, which affect the equation of state, must be corrected for through precise measurements of each ion's concentration and knowledge of apparent partial molar density in seawater. We have developed a density-based method for determining porewater salinity that requires only 5 mL of sample, achieving density precisions of 10-6 g/mL. We have applied this method to porewater samples extracted from long cores collected along a N-S transect across the western North Atlantic (R/V Knorr cruise KN223). Density was determined to a precision of 2.3x10-6 g/mL, which translates to salinity uncertainty of 0.002 gms/kg if the effect of differences in composition is well constrained. Concentrations of anions (Cl-, and SO4-2) and cations (Na+, Mg+, Ca+2, and K+) were measured. To correct salinities at the precision required to unravel LGM Meridional Overturning Circulation, our ion precisions must be better than 0.1% for SO4-/Cl- and Mg+/Na+, and 0.4% for Ca+/Na+, and K+/Na+. Alkalinity, pH and Dissolved Inorganic Carbon of the porewater were determined to precisions better than 4% when ratioed to Cl-, and used to calculate HCO3-, and CO3-2. Apparent partial molar densities in seawater were

  10. Maximum Parsimony on Phylogenetic networks

    Science.gov (United States)

    2012-01-01

    Background Phylogenetic networks are generalizations of phylogenetic trees, that are used to model evolutionary events in various contexts. Several different methods and criteria have been introduced for reconstructing phylogenetic trees. Maximum Parsimony is a character-based approach that infers a phylogenetic tree by minimizing the total number of evolutionary steps required to explain a given set of data assigned on the leaves. Exact solutions for optimizing parsimony scores on phylogenetic trees have been introduced in the past. Results In this paper, we define the parsimony score on networks as the sum of the substitution costs along all the edges of the network; and show that certain well-known algorithms that calculate the optimum parsimony score on trees, such as Sankoff and Fitch algorithms extend naturally for networks, barring conflicting assignments at the reticulate vertices. We provide heuristics for finding the optimum parsimony scores on networks. Our algorithms can be applied for any cost matrix that may contain unequal substitution costs of transforming between different characters along different edges of the network. We analyzed this for experimental data on 10 leaves or fewer with at most 2 reticulations and found that for almost all networks, the bounds returned by the heuristics matched with the exhaustively determined optimum parsimony scores. Conclusion The parsimony score we define here does not directly reflect the cost of the best tree in the network that displays the evolution of the character. However, when searching for the most parsimonious network that describes a collection of characters, it becomes necessary to add additional cost considerations to prefer simpler structures, such as trees over networks. The parsimony score on a network that we describe here takes into account the substitution costs along the additional edges incident on each reticulate vertex, in addition to the substitution costs along the other edges which are

  11. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  12. A MAS NMR and DRIFT study of the Ga species in Ga/H-ZSM5 catalysts and their effect on propane ammoxidation

    Energy Technology Data Exchange (ETDEWEB)

    Pal, P. [Indian Inst. of Petroleum, Dehradun (India). Catalysis Division; Quartararo, J. [Liverpool Univ., Liverpool (United Kingdom). Leverhulme Centre for Innovative Catalysis, Dept. of Chemistry; Abd Hamid, S.B. [Malaya Univ., Postgraduate School, Bangunan (Malaysia); Derouane, E.G. [Algarve Univ., Faro (Portugal). Faculdade de Ciencias e Tecnologia; Vedrine, J.C. [Laboratoire de Physico-Chimie des Surface, Paris (France). Faculdade de Ciencias e Tecnologia; Magusin, P.C.M.M.; Anderson, B.G. [Eindhoven Univ. of Technology, Eindhoven (Netherlands). Schuit Institute of Catalysis

    2005-07-01

    This paper presents the results of a study that sought information about the nature and environment of the gallium (Ga) species in Ga/H-ZSM5 zeolites following H{sub 2}-O{sub 2} redox treatments applied during their activation by use of magic-angle spinning (MAS) {sup 71}Ga, {sup 27}Al, and {sup 29}Si NMR spectroscopy (Ga coordination) complemented by diffuse reflectance FT IR (DRIFT) spectroscopy (Bronsted acidity). This information was then correlated with their catalytic behavior for the ammoxidation of propane. Ga species were observed in several environments: octahedrally coordinated gallium in small Ga{sub 2}O{sub 3} particles at the external surface of the zeolite crystals; octahedrally coordinated gallium in GaO(OH) or related species; and tetrahedrally coordinated gallium in cationic-exchange positions inside the zeolite. Redox (H{sub 2}-O{sub 2}) cycles promote the migration of gallium from the GaO(OH) or Ga{sub 2}O{sub 3} species at the external surface of the zeolite crystals to cationic-exchange sites within the zeolite channels. It was concluded that the redox treatment had a beneficial effect on its catalytic performance for the ammoxidation of propane, which occurs via a bifunctional mechanism. The main product was acetonitrile at high gallium and aluminium contents. It was suggested that higher yields in acrylonitrile could be obtained through Ga-modified zeolites with a higher gallium and lower aluminium content. 22 refs., 1 tab., 6 figs.

  13. Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

    KAUST Repository

    Al-Jabr, Ahmad; Majid, Mohammed Abdul; Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

    2016-01-01

    We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing

  14. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

    2017-03-01

    Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

  15. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

    2013-11-29

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

  16. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    International Nuclear Information System (INIS)

    Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

    2013-01-01

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

  17. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  18. Resonant Raman characterization of InAlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Cros, A.; Cantarero, A.; Pelekanos, N.T.; Georgakilas, A.; Pomeroy, J.; Kuball, M.

    2006-01-01

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Resonant Raman characterization of InAlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cros, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Pelekanos, N.T.; Georgakilas, A. [Microelectronics Research Group, FORTH/IESL and University of Crete, P.O. Box 1527, 71110 Heraklion, Crete (Greece); Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2006-06-15

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N. It is shown that the addition of In to the Al{sub y}Ga{sub 1-y}N alloy diminishes considerably the vibration energy of the A{sub 1}(LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In{sub x}Al{sub y}Ga{sub 1-x-y}N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    International Nuclear Information System (INIS)

    Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-01

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

  1. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

    2017-07-25

    Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

  2. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2013-07-01

    Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

  3. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Tan, W.S.; Parbrook, P.J.; Hill, G.; Airey, R.J.; Houston, P.A.

    2002-01-01

    Different dielectrics were used for post-processing surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the resulting electrical characteristics examined. An increase in the maximum drain current of approximately 25% was observed after Si 3 N 4 and SiO 2 deposition and ∼15% for annealed SiO on AlGaN/GaN HFETs. In all cases, the passivation was found to increase the gate leakage current with an observed reduction in the leakage activation energy. However, the rise in gate leakage current was least for SiO. The plasma enhanced chemical vapour deposition method was found not to contribute to the passivation mechanism, whilst the presence of Si appears to be an important factor. (author)

  4. Growth and characterization of cubic AlGaN/GaN based devices

    Energy Technology Data Exchange (ETDEWEB)

    Potthast, S.

    2006-11-15

    Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0Ga coverages of one monolayer and much greater than one monolayer. A linear dependence between the Al metal flux and the Al mole fraction is measured. Investigation of the growth front using reflection high energy electron diffraction as a probe, show a predominant two-dimensional growth mode. With increasing Al mole fraction, a change in the resistivity of the AlGaN layer is observed due to the gettering of oxygen by aluminum and the variation of the oxygen ionization energy as a function of the Al content. Schottky diodes are fabricated on GaN and AlGaN using nickel as contact material. A strong deviation of the current voltage characteristics from thermionic emission theory is found, measuring anormal high leakage current, caused by the presence of oxygen donors near the surface. It is investigated, that thermal annealing in air reduces the reverse current by three orders of magnitude. AlGaN/GaN are used to fabricate heterojunction field effect transistor structures. Analysis of the capacitance-voltage characteristics at T=150 K revealed clear evidence for the existence of a two-dimensional electron gas, and a sheet carrier concentration of about 1.6 x 10{sup 12}cm{sup -2} is

  5. Two-dimensional maximum entropy image restoration

    International Nuclear Information System (INIS)

    Brolley, J.E.; Lazarus, R.B.; Suydam, B.R.; Trussell, H.J.

    1977-07-01

    An optical check problem was constructed to test P LOG P maximum entropy restoration of an extremely distorted image. Useful recovery of the original image was obtained. Comparison with maximum a posteriori restoration is made. 7 figures

  6. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

    Science.gov (United States)

    Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

    2016-11-21

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

  7. Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Stefan

    2012-07-01

    This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

  8. Somatostatin receptor PET in neuroendocrine tumours: 68Ga-DOTA0,Tyr3-octreotide versus 68Ga-DOTA0-lanreotide

    International Nuclear Information System (INIS)

    Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Uprimny, Christian; Guggenberg, Elisabeth von; Decristoforo, Clemens; Warwitz, Boris; Virgolini, Irene Johanna; Traub-Weidinger, Tatjana; Widmann, Gerlig

    2013-01-01

    The aim of this study was to evaluate the impact of 68 Ga-labelled DOTA 0 -lanreotide ( 68 Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or 68 Ga-labelled DOTA 0 ,Tyr 3 -octreotide ( 68 Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or 68 Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent 68 Ga-DOTA-LAN PET to evaluate a treatment option with 90 Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 ± 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. 68 Ga-DOTA-LAN and 68 Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of 68 Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p 68 Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p 68 Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV max ) regarding the primary tumour in 25 patients (p 68 Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. 68 Ga-DOTA-TOC revealed more tumour sites than 68 Ga-DOTA-LAN (106 vs 53). The tumour to background ratios for tumour and liver calculated from SUV max measurements were significantly higher for 68 Ga-DOTA-TOC than 68 Ga

  9. Salinity Inhibits Rice Seed Germination by Reducing α-Amylase Activity via Decreased Bioactive Gibberellin Content

    Directory of Open Access Journals (Sweden)

    Li Liu

    2018-03-01

    Full Text Available Seed germination plays important roles in the establishment of seedlings and their subsequent growth; however, seed germination is inhibited by salinity, and the inhibitory mechanism remains elusive. Our results indicate that NaCl treatment inhibits rice seed germination by decreasing the contents of bioactive gibberellins (GAs, such as GA1 and GA4, and that this inhibition can be rescued by exogenous bioactive GA application. To explore the mechanism of bioactive GA deficiency, the effect of NaCl on GA metabolic gene expression was investigated, revealing that expression of both GA biosynthetic genes and GA-inactivated genes was up-regulated by NaCl treatment. These results suggest that NaCl-induced bioactive GA deficiency is caused by up-regulated expression of GA-inactivated genes, and the up-regulated expression of GA biosynthetic genes might be a consequence of negative feedback regulation of the bioactive GA deficiency. Moreover, we provide evidence that NaCl-induced bioactive GA deficiency inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression. Additionally, exogenous bioactive GA rescues NaCl-inhibited seed germination by enhancing α-amylase activity. Thus, NaCl treatment reduces bioactive GA content through promotion of bioactive GA inactivation, which in turn inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression.

  10. Photoelectrochemical studies of InGaN/GaN MQW photoanodes

    Science.gov (United States)

    Butson, Joshua; Reddy Narangari, Parvathala; Krishna Karuturi, Siva; Yew, Rowena; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

    2018-01-01

    The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.

  11. Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires.

    Science.gov (United States)

    Hsu, Cheng-Liang; Lu, Ying-Ching

    2012-09-21

    This study investigates the feasibility of synthesizing high-density transparent Ga(2)O(3)/SnO(2):Ga core-shell nanowires on a sapphire substrate at 1000 °C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga(2)O(3) and SnO(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO(2) and Ga(2)O(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga(2)O(3)/SnO(2):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga(2)O(3) region functions similar to a capacitor and continues to accumulate SnO(2):Ga excited electrons under UV light exposure.

  12. Local Content

    CSIR Research Space (South Africa)

    Gibberd, Jeremy

    2016-10-01

    Full Text Available Local content refers to materials and products made in a country as opposed those that are imported. There is an increasing interest in the concept of local content as a means of supporting local economies and providing jobs (Belderbos & Sleuwaegen...

  13. Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga2O3 nanocrystalline films

    Science.gov (United States)

    Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; Ramana, C. V.

    2017-09-01

    An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg ∼ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

  14. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    Growth of high-quality a-plane GaN layers was performed by reaction between Ga 2 O vapor and NH 3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga 2 O partial pressure. An a-plane GaN layer with a growth rate of 48 μm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(112-bar0) with the incident beam parallel and perpendicular to the [0001] direction were 29–43 and 29–42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga 2 O vapor and NH 3 gas at a high temperature enables the generation of high-quality crystals. (author)

  15. GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS

    OpenAIRE

    Tut, Turgut

    2008-01-01

    Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 2008. Thesis (Ph.D.) -- Bilkent University, 2008. Includes bibliographical references leaves 73-80. The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver sensitivity, low noise, low dark current density,...

  16. Structural and luminescence effects of Ga co-doping on Ce-doped yttrium aluminate based phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Ayvacikli, M. [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Canimoglu, A. [Nigde University, Faculty of Arts and Sciences, Physics Department, Nigde (Turkey); Muresan, L.E., E-mail: laura_muresan2003@yahoo.com [Babes Bolyai University, Raluca Ripan Institute for Research in Chemistry, Fantanele 30, 400294 Cluj-Napoca (Romania); Barbu Tudoran, L. [Babes Bolyai University, Electronic Microscopy Centre, Clinicilor 37, 400006 Cluj Napoca (Romania); Garcia Guinea, J. [Museo Nacional Ciencias Naturales, Jose Gutierrez Abascal 2, Madrid 28006 (Spain); Karabulut, Y. [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Jorge, A. [Museo Nacional Ciencias Naturales, Jose Gutierrez Abascal 2, Madrid 28006 (Spain); Karali, T. [Ege University, Institute of Nuclear Sciences, 35100 Bornova, İzmir (Turkey); Can, N., E-mail: cannurdogan@yahoo.com [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Jazan University, Physics Department, P.O. Box 114, 45142 Jazan (Saudi Arabia)

    2016-05-05

    Herein, we primarily focus on luminescence spectrum measurements of various types of green emitting yttrium aluminate phosphors modified with gallium (Y{sub 3}Al{sub 5-x}Ga{sub x}O{sub 12}) synthesised by solid state reaction. The luminescent emission of samples depends on sample temperature and excitation radiation such as incident X-ray, electron and laser beam. Here, we measured radioluminescence (RL), cathodoluminescence (CL), photoluminescence (PL) along with XRD in order to clarify relationship between lattice defects and the spectral luminescence emissions. The RL and CL spectra of YAG:Ce exhibit an emission band ranging from 300 to 450 nm related to Y{sub Al} antisite defects. The broad emission band of garnet phosphors is shifted from 526 nm to 498 nm with increasing of Ga{sup 3+} content, while full width at half maximum (FWHM) of the band tends to be greater than the width of unmodified YAG:Ce garnet. Deconvolution of the spectrum reveals that three emission bands centred at 139, 234 and 294 °C occur in aluminate host garnets. - Highlights: • We present preparation of YAG:Ce{sup 3+}, Ga{sup 3+} phosphors by a solid state reaction method. • The shape and size of phosphor particles were investigated. • The luminescence properties were studied by different excitation sources.

  17. Depth of maximum of air-shower profiles at the Pierre Auger Observatory. I. Measurements at energies above 10.sup.17.8./sup.  eV

    Czech Academy of Sciences Publication Activity Database

    Aab, A.; Abreu, P.; Aglietta, M.; Boháčová, Martina; Chudoba, Jiří; Ebr, Jan; Mandát, Dušan; Nečesal, Petr; Palatka, Miroslav; Pech, Miroslav; Prouza, Michael; Řídký, Jan; Schovánek, Petr; Trávníček, Petr; Vícha, Jakub

    2014-01-01

    Roč. 90, č. 12 (2014), "122005-1"-"122005-25" ISSN 1550-7998 R&D Projects: GA MŠk(CZ) 7AMB14AR005; GA MŠk(CZ) LG13007; GA ČR(CZ) GA14-17501S Institutional support: RVO:68378271 Keywords : astroparticle physics * Pierre Auger Observatory * cosmic rays * air showers * depth of maximum * Xmax Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 4.643, year: 2014

  18. Receiver function estimated by maximum entropy deconvolution

    Institute of Scientific and Technical Information of China (English)

    吴庆举; 田小波; 张乃铃; 李卫平; 曾融生

    2003-01-01

    Maximum entropy deconvolution is presented to estimate receiver function, with the maximum entropy as the rule to determine auto-correlation and cross-correlation functions. The Toeplitz equation and Levinson algorithm are used to calculate the iterative formula of error-predicting filter, and receiver function is then estimated. During extrapolation, reflective coefficient is always less than 1, which keeps maximum entropy deconvolution stable. The maximum entropy of the data outside window increases the resolution of receiver function. Both synthetic and real seismograms show that maximum entropy deconvolution is an effective method to measure receiver function in time-domain.

  19. Comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-LAN PET/CT imaging in the same patient group with neuroendocrine tumours: preliminary results.

    Science.gov (United States)

    Demirci, Emre; Ocak, Meltem; Kabasakal, Levent; Araman, Ahmet; Ozsoy, Yildiz; Kanmaz, Bedii

    2013-08-01

    Recent studies have suggested that PET imaging with Ga-68-labelled DOTA-somatostatin analogues such as octreotide and octreotate is useful in diagnosing neuroendocrine tumours (NETs) and has superior value over both computed tomography and planar and SPECT somatostatin receptor scintigraphy. The aim of the present study was to evaluate the role of Ga-68 DOTA-lanreotide (Ga-68-DOTA-LAN) in patients with somatostatin receptor (sst)-expressing tumours and to compare the results of Ga-68 DOTA-D-Phe1-Tyr3-octreotate (Ga-68-DOTA-TATE) in the same patient population. Twelve patients with NETs who were referred to our department for somatostatin receptor scintigraphy were included in the study. There were four patients with well-differentiated neuroendocrine tumour (WDNET) grade 1, two patients with WDNET grade 2, and three patients with poorly differentiated neuroendocrine carcinoma (PDNEC) grade 3. There was also one patient with medullary thyroid cancer, one patient with meningioma and one patient with MEN-1. All patients underwent two consecutive PET imaging studies with Ga-68-DOTA-TATE and Ga-68 DOTA-LAN. All images were evaluated visually, and maximum standardized uptake value was calculated for quantitative evaluation. On visual examination of maximum intensity projection images, GA-68 DOTA-LAN was seen to have high background activity and high bone marrow uptake. Both tracers defined 67 lesions. Ga-68 DOTA-TATE images revealed 63 (94%) clearly defined lesions, missing four lesions. In contrast, Ga-68 DOTA-LAN images defined only 23 (44%) lesions, missing 44 (56%) lesions. Thirty-two bone lesions were detected on Ga-68-DOTA-TATE images. Among them, only 11 (34%) were positive on Ga-68 DOTA-LAN images, whereas 21 (66%) were negative. When we evaluated liver, mediastinum and gastrointestinal tract lesions, Ga-68 DOTA-LAN was seen to be positive for 12 (34%) lesions and negative for 23 (66%) lesions. Although the results are preliminary, the image quality obtained by

  20. Optical characterization of In xGa1-xN alloys

    International Nuclear Information System (INIS)

    Gartner, M.; Kruse, C.; Modreanu, M.; Tausendfreund, A.; Roder, C.; Hommel, D.

    2006-01-01

    InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers. The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content (x) in the 0 g = 3.44-4.5x. The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS

  1. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  2. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  3. Efficient photodecomposition of herbicide imazapyr over mesoporous Ga2O3-TiO2 nanocomposites.

    Science.gov (United States)

    Ismail, Adel A; Abdelfattah, Ibrahim; Faisal, M; Helal, Ahmed

    2018-01-15

    The unabated release of herbicide imazapyr into the soil and groundwater led to crop destruction and several pollution-related concerns. In this contribution, heterogeneous photocatalytic technique was employed utilizing mesoporous Ga 2 O 3 -TiO 2 nanocomposites for degrading imazapyr herbicide as a model pollutant molecule. Mesoporous Ga 2 O 3 -TiO 2 nanocomposites with varied Ga 2 O 3 contents (0-5wt%) were synthesized through sol-gel process. XRD and Raman spectra exhibited extremely crystalline anatase TiO 2 phase at low Ga 2 O 3 content which gradually reduced with the increase of Ga 2 O 3 content. TEM images display uniform TiO 2 particles (10±2nm) with mesoporous structure. The mesoporous TiO 2 exhibits large surface areas of 167m 2 g -1 , diminished to 108m 2 g -1 upon 5% Ga 2 O 3 incorporation, with tunable mesopore diameter in the range of 3-9nm. The photocatalytic efficiency of synthesized Ga 2 O 3 -TiO 2 nanocomposites was assessed by degrading imazapyr herbicide and comparing with commercial photocatalyst UV-100 and mesoporous Ga 2 O 3 under UV illumination. 0.1% Ga 2 O 3 -TiO 2 nanocomposite is considered the optimum photocatalyst, which degrades 98% of imazapyr herbicide within 180min. Also, the photodegradation rate of imazapyr using 0.1% Ga 2 O 3 -TiO 2 nanocomposite is nearly 10 and 3-fold higher than that of mesoporous Ga 2 O 3 and UV-100, respectively. The high photonic efficiency and long-term stability of the mesoporous Ga 2 O 3 -TiO 2 nanocomposites are ascribed to its stronger oxidative capability in comparison with either mesoporous TiO 2 , Ga 2 O 3 or commercial UV-100. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Maximum Power from a Solar Panel

    Directory of Open Access Journals (Sweden)

    Michael Miller

    2010-01-01

    Full Text Available Solar energy has become a promising alternative to conventional fossil fuel sources. Solar panels are used to collect solar radiation and convert it into electricity. One of the techniques used to maximize the effectiveness of this energy alternative is to maximize the power output of the solar collector. In this project the maximum power is calculated by determining the voltage and the current of maximum power. These quantities are determined by finding the maximum value for the equation for power using differentiation. After the maximum values are found for each time of day, each individual quantity, voltage of maximum power, current of maximum power, and maximum power is plotted as a function of the time of day.

  5. Effect of Al substitution for Ga on the mechanical properties of directional solidified Fe-Ga alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yangyang; Li, Jiheng; Gao, Xuexu, E-mail: gaox@skl.ustb.edu.cn

    2017-02-01

    Alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} (x=0, 4.5, 6, 9, 12, 13.5) were prepared by directional solidification technique and exhibited a <001> preferred orientation along the axis of alloy rods. The saturation magnetostriction value of the Fe{sub 82}Ga{sub 13.5}Al{sub 4.5} alloy was 247 ppm under no pre-stress. The tensile properties of alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} at room temperature were investigated. The results showed that tensile ductility of binary Fe-Ga alloy was significantly improved with Al addition. The fracture elongation of the Fe{sub 82}Ga{sub 18} alloy was only 1.3%, while that of the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy increased up to 16.5%. Addition of Al increased the strength of grain boundary and cleavage, resulting in the enhancement of tensile ductility of the Fe-Ga-Al alloys. Analysis of deformation microstructure showed that a great number of deformation twins formed in the Fe-Ga-Al alloys, which were thought to be the source of serrated yielding in the stress-strain curves. The effect of Al content in the Fe-Ga-Al alloys on tensile ductility was also studied by the analysis of deformation twins. It indicated that the joint effect of slip and twinning was beneficial to obtain the best ductility in the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy. - Highlights: • Tensile ductility of directional solidified Fe-Ga alloys was significantly improved with Al addition. • The fracture elongation of binary Fe{sub 82}Ga{sub 18} alloy was only 1.3% at room temperature. • The fracture elongation of Fe{sub 82}Ga{sub 9}Al{sub 9} alloy was 16.5% at room temperature. • A great number of deformation twins formed in the Fe-Ga-Al alloys during tensile tests at room temperature.

  6. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

    2013-01-01

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

  7. Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, Phannee

    2010-07-08

    {proportional_to}700 and {proportional_to}840 arcsec, respectively. The good optical qualities of Al{sub 0.1}Ga{sub 0.9}N and Al{sub 0.65}Ga{sub 0.35}N are presented with a low yellow luminescence and narrow nearbandgap emissions at 330 and 240 nm, respectively as determined by cathodoluminescence (CL) measurements. The maximum electron concentration of 2.6 x 10{sup 18} cm{sup -3} in n-type Al{sub 0.1}Ga{sub 0.9}N:Si layers and a hole concentration of 2.4 x 10{sup 17} cm{sup -3} of Mg-doped GaN/Al{sub 0.1}Ga{sub 0.9}N superlattices are achievable. These high-quality Al{sub x}Ga{sub 1-x}N materials with good optical and electrical properties are the main factors to accomplish AlGaN-based UV-LEDs on Si(111) substrates. It is demonstrated that it is also a promising approach to achieve deep UV-LEDs on Si substrates with a higher Al content layers. (orig.)

  8. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Science.gov (United States)

    Netzel, C.; Knauer, A.; Weyers, M.

    2012-12-01

    We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

  9. Changes in endogenous hormone contents of pear stock ( Pyrus ...

    African Journals Online (AJOL)

    In this study, changes in endogenous hormone contents of pear stock seeds during cold stratification were investigated. Abscisic acid (ABA) content decreased with increase in the periods of stratification of pear stock seeds. However, gibberellic acid (GA) and indole-3-acetic acid (IAA) contents of Pyrus betulaefolia and ...

  10. Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures

    International Nuclear Information System (INIS)

    Laskar, J.; Kolodzey, J.; Ketterson, A.A.; Adesida, I.; Cho, A.Y.

    1990-01-01

    The authors present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Al 0.3 Ga 0.7 As metal insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation f max from 70 to 81 GHz and an increase in the unity current gain cutoff frequency f T from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the high-speed potential of doped channel MISFET's at both room temperature and cryogenic temperatures

  11. Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

    Science.gov (United States)

    Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

    2011-10-01

    This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

  12. Ga-Bi-Te system

    International Nuclear Information System (INIS)

    Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

    1976-01-01

    To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

  13. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  14. GaN MOSFET with Boron Trichloride-Based Dry Recess Process

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Tamai, K; Ao, J P; Ohno, Y; Miyashita, T; Motoyama, S; Wang, D J

    2013-01-01

    The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl 3 ) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl 4 ) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl 3 based dry recess achieved a high maximum electron mobility of 141.5 cm 2 V −1 s −1 and a low interface state density.

  15. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  16. Maximum permissible voltage of YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

    2014-06-15

    Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  17. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  18. Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim

    2009-07-02

    The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

  19. Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

    Science.gov (United States)

    Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

    2016-12-01

    This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

  20. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    International Nuclear Information System (INIS)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A; Molina-Valdovinos, S; Melendez-Lira, M; Lopez-Lopez, M

    2009-01-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm -1 and 291 cm -1 , respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm -1 and 250 cm -1 are evidenced. Additional new peaks located around 650 and 690 cm -1 are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm -1 and 695.2 cm -1 , in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn) m As n localized structures.

  1. Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Utz, Martin

    2012-09-14

    The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

  2. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  3. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

    Science.gov (United States)

    Li, Qiang; Lai, Billy; Lau, Kei May

    2017-10-01

    We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

  4. Characterization of 0.18- μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

    Science.gov (United States)

    Yoon, Hyung Sup; Min, Byoung-Gue; Lee, Jong Min; Kang, Dong Min; Ahn, Ho Kyun; Cho, Kyu-Jun; Do, Jae-Won; Shin, Min Jeong; Jung, Hyun-Wook; Kim, Sung Il; Kim, Hae Cheon; Lim, Jong Won

    2017-09-01

    We fabricated a 0.18- μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance ( g m ) of 345 mS/mm, and a threshold voltage ( V th ) of -2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency ( f T ) of 48 GHz and a maximum oscillation frequency ( f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.

  5. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  6. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Jahangir, Shafat; Frost, Thomas; Bhattacharya, Pallab; Ooi, Boon S.

    2016-01-01

    -droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light

  7. Robust AlGaN/GaN MMIC Receiver Components

    NARCIS (Netherlands)

    Heijningen, M. van; Janssen, J.P.B.; Vliet, F.E. van

    2009-01-01

    Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch

  8. Physiology and microbial community structure in soil at extreme water content

    Czech Academy of Sciences Publication Activity Database

    Uhlířová, Eva; Elhottová, Dana; Tříska, Jan; Šantrůčková, Hana

    2005-01-01

    Roč. 50, č. 2 (2005), s. 161-166 ISSN 0015-5632 R&D Projects: GA ČR(CZ) GA206/99/1410; GA ČR(CZ) GA526/99/P033 Institutional research plan: CEZ:AV0Z6066911 Keywords : microbial community structure * soils * extreme water content Subject RIV: EH - Ecology, Behaviour Impact factor: 0.918, year: 2005

  9. Growth initiation processes for GaAs and AlGaAs in CBE

    International Nuclear Information System (INIS)

    Hill, D.

    2002-01-01

    The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

  10. Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Z.; Niu, Z.C.; Huang, S.S.; Fang, Z.D.; Sun, B.Q.; Xia, J.B.

    2005-01-01

    GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings

  11. Concrete workability and fibre content

    OpenAIRE

    Vikan, Hedda

    2007-01-01

    Research report Parameters influencing the workability of fibre concrete and maximum fibre content are given in this state of the art report along with the range of fibre types available on today’s market. The study reveales that new placing techniques and production methods are crucial in order to increase fibre content and concrete strength. Achieving the same mechanical properties as traditionally reinforced concrete will probably also demand changes of the matrix. Finally, reco...

  12. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  13. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

    International Nuclear Information System (INIS)

    Shen, J; Cha, J J; Song, Y; Lee, M L

    2014-01-01

    InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems. (paper)

  14. Revealing the Maximum Strength in Nanotwinned Copper

    DEFF Research Database (Denmark)

    Lu, L.; Chen, X.; Huang, Xiaoxu

    2009-01-01

    boundary–related processes. We investigated the maximum strength of nanotwinned copper samples with different twin thicknesses. We found that the strength increases with decreasing twin thickness, reaching a maximum at 15 nanometers, followed by a softening at smaller values that is accompanied by enhanced...

  15. Modelling maximum canopy conductance and transpiration in ...

    African Journals Online (AJOL)

    There is much current interest in predicting the maximum amount of water that can be transpired by Eucalyptus trees. It is possible that industrial waste water may be applied as irrigation water to eucalypts and it is important to predict the maximum transpiration rates of these plantations in an attempt to dispose of this ...

  16. Investigation of the GaN-on-GaAs interface for vertical power device applications

    International Nuclear Information System (INIS)

    Möreke, Janina; Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-01-01

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  17. Investigation of the GaN-on-GaAs interface for vertical power device applications

    Energy Technology Data Exchange (ETDEWEB)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  18. Evaluation and comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET/CT imaging in well-differentiated thyroid cancer.

    Science.gov (United States)

    Ocak, Meltem; Demirci, Emre; Kabasakal, Levent; Aygun, Aslan; Tutar, Rumeysa O; Araman, Ahmet; Kanmaz, Bedii

    2013-11-01

    Somatostatin receptor (Sstr) scintigraphy with radiolabelled somatostatin analogues has been used extensively for the diagnosis and therapy of Sstr-expressing tumours. It has been shown that well-differentiated thyroid cancer (WDTC) cells have a high expression of Sstr2, Sstr3 and Sstr5. Hence, WDTC cells could be an ideal target for the evaluation of lesion uptake of Ga-68 DOTA-1-NaI3-octreotide (DOTA-NOC), which has a high affinity not only to Sstr2 but also to Sstr3 and Sstr5. The aim of the present study was to evaluate the value of Ga-68 DOTA-NOC as a target for Sstr2-expressing, Sstr3-expressing and Sstr5-expressing tumours in WDTC patients and to compare the results with those of Ga-68 DOTA-TATE in the same patient population. Thirteen patients with WDTC were included in our study: nine with papillary thyroid cancer, three with Hurthle cell carcinoma and one with follicular thyroid carcinoma. All patients had elevated serum thyroglobulin levels and negative post-therapeutic I-131 whole-body scans, which were obtained after the last radioiodine treatment. All patients had undergone two consecutive PET imaging studies with Ga-68 DOTA-D-Phe1-Tyr3-octreotate (DOTA-TATE) and Ga-68 DOTA-NOC, respectively. All images were evaluated visually, and maximum standardized uptake values were calculated. Both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET images gave comparable results. Among the 13 patients, imaging with both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC gave negative results in five (38%) patients and positive results in eight (62%) patients. A total of 45 lesions were identified on Ga-68 DOTA-TATE images and 42 on Ga-68 DOTA-NOC images; three lesions were missed. Lesion uptake was significantly higher on Ga-68 DOTA-TATE images. Maximum standardized uptake values of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC were 12.9±9.1 and 6.3±4.1 (n=54, PDOTA-TATE has a higher lesion uptake even in WDTC patients and may have potential advantage over Ga-68 DOTA-NOC.

  19. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Science.gov (United States)

    Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-01-01

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap

  20. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Directory of Open Access Journals (Sweden)

    Hongbo Qin

    2017-12-01

    Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger

  1. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

    Science.gov (United States)

    Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-12-12

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of

  2. Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

    Science.gov (United States)

    Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

    2003-05-01

    Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

  3. Retention and subcellular distribution of 67Ga in normal organs

    International Nuclear Information System (INIS)

    Ando, A.; Ando, I.; Hiraki, T.

    1986-01-01

    Using normal rats, retention values and subcellular distribution of 67 Ga in each organ were investigated. At 10 min after administration of 67 Ga-citrate the retention value of 67 Ga in blood was 6.77% dose/g, and this value decreased with time. The values for skeletal muscle, lung, pancreas, adrenal, heart muscle, brain, small intestine, large intestine and spinal cord were the highest at 10 min after administration, and they decreased with time. Conversely this value in bone increased until 10 days after injection. But in the liver, kidney, and stomach, these values increased with time after administration and were highest 24 h or 48 h after injection. After that, they decreased with time. The value in spleen reached a plateau 48 h after administration, and hardly varied for 10 days. From the results of subcellular fractionation, it was deduced that lysosome plays quite an important role in the concentration of 67 Ga in small intestine, stomach, lung, kidney and pancreas; a lesser role in its concentration in heart muscle, and hardly any role in the 67 Ga accumulation in skeletal muscle. In spleen, the contents in nuclear, mitochrondrial, microsomal, and supernatant fractions all contributed to the accumulation of 67 Ga. (orig.) [de

  4. A discussion about maximum uranium concentration in digestion solution of U3O8 type uranium ore concentrate

    International Nuclear Information System (INIS)

    Xia Dechang; Liu Chao

    2012-01-01

    On the basis of discussing the influence of single factor on maximum uranium concentration in digestion solution,the influence degree of some factors such as U content, H 2 O content, mass ratio of P and U was compared and analyzed. The results indicate that the relationship between U content and maximum uranium concentration in digestion solution was direct ratio, while the U content increases by 1%, the maximum uranium concentration in digestion solution increases by 4.8%-5.7%. The relationship between H 2 O content and maximum uranium concentration in digestion solution was inverse ratio, the maximum uranium concentration in digestion solution decreases by 46.1-55.2 g/L while H 2 O content increases by 1%. The relationship between mass ratio of P and U and maximum uranium concentration in digestion solution was inverse ratio, the maximum uranium concentration in digestion solution decreases by 116.0-181.0 g/L while the mass ratio of P and U increase 0.1%. When U content equals 62.5% and the influence of mass ratio of P and U is no considered, the maximum uranium concentration in digestion solution equals 1 578 g/L; while mass ratio of P and U equals 0.35%, the maximum uranium concentration decreases to 716 g/L, the decreased rate is 54.6%, so the mass ratio of P and U in U 3 O 8 type uranium ore concentrate is the main controlling factor. (authors)

  5. Estimation of Financial Agent-Based Models with Simulated Maximum Likelihood

    Czech Academy of Sciences Publication Activity Database

    Kukačka, Jiří; Baruník, Jozef

    2017-01-01

    Roč. 85, č. 1 (2017), s. 21-45 ISSN 0165-1889 R&D Projects: GA ČR(CZ) GBP402/12/G097 Institutional support: RVO:67985556 Keywords : heterogeneous agent model, * simulated maximum likelihood * switching Subject RIV: AH - Economics OBOR OECD: Finance Impact factor: 1.000, year: 2016 http://library.utia.cas.cz/separaty/2017/E/kukacka-0478481.pdf

  6. Discrete Maximum Principle for Higher-Order Finite Elements in 1D

    Czech Academy of Sciences Publication Activity Database

    Vejchodský, Tomáš; Šolín, Pavel

    2007-01-01

    Roč. 76, č. 260 (2007), s. 1833-1846 ISSN 0025-5718 R&D Projects: GA ČR GP201/04/P021 Institutional research plan: CEZ:AV0Z10190503; CEZ:AV0Z20760514 Keywords : discrete maximum principle * discrete Grren´s function * higher-order elements Subject RIV: BA - General Mathematics Impact factor: 1.230, year: 2007

  7. Dynamic water vapor sorption on Mg(Ga3+)O mixed oxides: Analysis of the LDH thermal regeneration process

    International Nuclear Information System (INIS)

    Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio; Prince, Julia; Lima, Enrique; Pfeiffer, Heriberto; Valente, Jaime S.

    2013-01-01

    Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results

  8. Dynamic water vapor sorption on Mg(Ga{sup 3+})O mixed oxides: Analysis of the LDH thermal regeneration process

    Energy Technology Data Exchange (ETDEWEB)

    Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Prince, Julia [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico); Lima, Enrique [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Pfeiffer, Heriberto, E-mail: pfeiffer@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Valente, Jaime S. [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico)

    2013-02-10

    Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results.

  9. Synthesis and properties of γ-Ga2O3-Al2O3 solid solutions

    Science.gov (United States)

    Afonasenko, T. N.; Leont'eva, N. N.; Talzi, V. P.; Smirnova, N. S.; Savel'eva, G. G.; Shilova, A. V.; Tsyrul'nikov, P. G.

    2017-10-01

    The textural and structural properties of mixed oxides Ga2O3-Al2O3, obtained via impregnating γ-Al2O3 with a solution of Ga(NO3)3 and subsequent heat treatment, are studied. According to the results from X-ray powder diffraction, gallium ions are incorporated into the structure of aluminum oxide to form a solid solution of spinel-type γ-Ga2O3-Al2O3 up to a Ga2O3 content of 50 wt % of the total weight of the sample, accompanied by a reduction in the specific surface area, volume, and average pore diameter. It is concluded that when the Ga2O3 content exceeds 50 wt %, the β-Ga2O3 phase is observed along with γ-Ga2O3-Al2O3 solid solution. 71Ga and 27Al NMR spectroscopy shows that gallium replaces aluminum atoms from the tetrahedral position to the octahedral coordination in the structure of γ-Ga2O3-Al2O3.

  10. Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

    2011-12-01

    Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

  11. A local maximum in gibberellin levels regulates maize leaf growth by spatial control of cell division.

    Science.gov (United States)

    Nelissen, Hilde; Rymen, Bart; Jikumaru, Yusuke; Demuynck, Kirin; Van Lijsebettens, Mieke; Kamiya, Yuji; Inzé, Dirk; Beemster, Gerrit T S

    2012-07-10

    Plant growth rate is largely determined by the transition between the successive phases of cell division and expansion. A key role for hormone signaling in determining this transition was inferred from genetic approaches and transcriptome analysis in the Arabidopsis root tip. We used the developmental gradient at the maize leaf base as a model to study this transition, because it allows a direct comparison between endogenous hormone concentrations and the transitions between dividing, expanding, and mature tissue. Concentrations of auxin and cytokinins are highest in dividing tissues, whereas bioactive gibberellins (GAs) show a peak at the transition zone between the division and expansion zone. Combined metabolic and transcriptomic profiling revealed that this GA maximum is established by GA biosynthesis in the division zone (DZ) and active GA catabolism at the onset of the expansion zone. Mutants defective in GA synthesis and signaling, and transgenic plants overproducing GAs, demonstrate that altering GA levels specifically affects the size of the DZ, resulting in proportional changes in organ growth rates. This work thereby provides a novel molecular mechanism for the regulation of the transition from cell division to expansion that controls organ growth and size. Copyright © 2012 Elsevier Ltd. All rights reserved.

  12. Investigation of InGaN/GaN laser degradation based on luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Pengyan; Zhang, Shuming, E-mail: smzhang2010@sinano.ac.cn; Liu, Jianping; Li, Deyao; Zhang, Liqun; Sun, Qian; Tian, Aiqin; Zhou, Kun; Yang, Hui [Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhou, Taofei [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2016-06-07

    Degradation of InGaN/GaN laser diode (LD) is investigated based on the luminescence properties. Gradual degradation of the LD is presented with the threshold current increase and the slope efficiency decrease. The cathodoluminescence and photoluminescence characterizations of the LD show a dislocation independent degradation of the active region under the ridge. Detailed studies on the temperature-dependent micro-photoluminescence and the electroluminescence indicate that the degradation of the LD is attributed to the generation of non-radiative recombination centers in the local multiple quantum well regions with lower indium content. The activation energy of the non-radiative recombination centers is about 10.2 meV.

  13. Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells

    International Nuclear Information System (INIS)

    Karcher, C.; Jandieri, K.; Kunert, B.; Fritz, R.; Volz, K.; Stolz, W.; Gebhard, F.; Baranovskii, S.D.; Heimbrodt, W.

    2013-01-01

    The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content. - Highlights: ► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.

  14. Design of Asymmetrical Relay Resonators for Maximum Efficiency of Wireless Power Transfer

    Directory of Open Access Journals (Sweden)

    Bo-Hee Choi

    2016-01-01

    Full Text Available This paper presents a new design method of asymmetrical relay resonators for maximum wireless power transfer. A new design method for relay resonators is demanded because maximum power transfer efficiency (PTE is not obtained at the resonant frequency of unit resonator. The maximum PTE for relay resonators is obtained at the different resonances of unit resonator. The optimum design of asymmetrical relay is conducted by both the optimum placement and the optimum capacitance of resonators. The optimum placement is found by scanning the positions of the relays and optimum capacitance can be found by using genetic algorithm (GA. The PTEs are enhanced when capacitance is optimally designed by GA according to the position of relays, respectively, and then maximum efficiency is obtained at the optimum placement of relays. The capacitance of the second resonator to nth resonator and the load resistance should be determined for maximum efficiency while the capacitance of the first resonator and the source resistance are obtained for the impedance matching. The simulated and measured results are in good agreement.

  15. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

    Directory of Open Access Journals (Sweden)

    Chang-Ju Lee

    2017-07-01

    Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  16. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  17. Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Mohanta, Antaryami; Wang, Shiang-Fu; Jang, Der-Jun, E-mail: djjang@mail.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Young, Tai-Fa [Department of Mechanical and Electromechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Yeh, Ping-Hung; Ling, Dah-Chin [Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China); Lee, Meng-En [Department of Physics, National Kaohsiung Normal University, Kaohsiung 80264, Taiwan (China)

    2015-04-14

    Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τ{sub r}, extracted from the TRPL profile shows ∼T{sup 3/2} dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.

  18. Optical and structural characterization of GaSb and Te-doped GaSb single crystals

    International Nuclear Information System (INIS)

    Tirado-Mejia, L.; Villada, J.A.; Rios, M. de los; Penafiel, J.A.; Fonthal, G.; Espinosa-Arbelaez, D.G.; Ariza-Calderon, H.; Rodriguez-Garcia, M.E.

    2008-01-01

    Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality

  19. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Colombo, C.; Spirkoska, D.; Frimmer, M.; Abstreiter, G.; Fontcuberta i Morral, A.

    2008-01-01

    The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As 4 pressure. Additionally, due to the small As 4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40 μm

  20. Arrays of ZnO/CuIn{sub x}Ga{sub 1−x}Se{sub 2} nanocables with tunable shell composition for efficient photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Akram, Muhammad Aftab; Javed, Sofia [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (Hong Kong); City University of Hong Kong, Shenzhen Research Institute, Shenzhen 518057 (Hong Kong); School of Chemical and Materials Engineering, National University of Sciences and Technology, Sector H-12, Islamabad 44000 (Pakistan); Xu, Jun, E-mail: apjunxu@hfut.edu.cn [School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China); Mujahid, Mohammad, E-mail: principal@scme.nust.edu.pk [School of Chemical and Materials Engineering, National University of Sciences and Technology, Sector H-12, Islamabad 44000 (Pakistan); Lee, Chun-Sing, E-mail: c.s.lee@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (Hong Kong); City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (Hong Kong)

    2015-05-28

    Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn{sub x}Ga{sub 1−x}Se{sub 2} core/shell nanocables with tunable shell compositions over the full range of 0 ≤ x ≤ 1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In{sub x}Ga{sub 1−x}, ZnO/CuSe/(In{sub x}Ga{sub 1−x}){sub 2}Se{sub 3}, and ZnO/CuIn{sub x}Ga{sub 1−x}Se{sub 2}, are well designed and successfully achieved. Composition-dependent influences of the CuIn{sub x}Ga{sub 1−x}Se{sub 2} shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J{sub SC}) but a decrease in open-circuit voltage (V{sub OC}) for the ZnO/CuIn{sub x}Ga{sub 1−x}Se{sub 2} nanocable solar cells. An array of ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} nanocables with a length of ∼1 μm and a shell thickness of ∼10 nm exhibits a bandgap of 1.20 eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5 G illumination at an intensity of 100 mW/cm{sup 2}. It dramatically surpasses that (0.22%) of the ZnO/CuIn{sub 0.67}Ga{sub 0.33}Se{sub 2} planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer.

  1. Arrays of ZnO/CuInxGa1−xSe2 nanocables with tunable shell composition for efficient photovoltaics

    International Nuclear Information System (INIS)

    Akram, Muhammad Aftab; Javed, Sofia; Xu, Jun; Mujahid, Mohammad; Lee, Chun-Sing

    2015-01-01

    Arrays of one-dimensional (1D) nanostructure are receiving much attention for their optoelectronic and photovoltaic applications due to their advantages in light absorption, charge separation, and transportation. In this work, arrays of ZnO/CuIn x Ga 1−x Se 2 core/shell nanocables with tunable shell compositions over the full range of 0 ≤ x ≤ 1 have been controllably synthesized. Chemical conversions of ZnO nanorods to a series of ZnO-based nanocables, including ZnO/ZnSe, ZnO/CuSe, ZnO/CuSe/In x Ga 1−x , ZnO/CuSe/(In x Ga 1−x ) 2 Se 3 , and ZnO/CuIn x Ga 1−x Se 2 , are well designed and successfully achieved. Composition-dependent influences of the CuIn x Ga 1−x Se 2 shells on photovoltaic performance are investigated. It is found that the increase in indium content (x) leads to an increase in short-circuit current density (J SC ) but a decrease in open-circuit voltage (V OC ) for the ZnO/CuIn x Ga 1−x Se 2 nanocable solar cells. An array of ZnO/CuIn 0.67 Ga 0.33 Se 2 nanocables with a length of ∼1 μm and a shell thickness of ∼10 nm exhibits a bandgap of 1.20 eV, and yields a maximum power conversion efficiency of 1.74% under AM 1.5 G illumination at an intensity of 100 mW/cm 2 . It dramatically surpasses that (0.22%) of the ZnO/CuIn 0.67 Ga 0.33 Se 2 planar thin-film device. Our work reveals that 1D nanoarray allows efficient photovoltaics without using toxic CdS buffer layer

  2. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

    2009-03-07

    Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

  3. MXLKID: a maximum likelihood parameter identifier

    International Nuclear Information System (INIS)

    Gavel, D.T.

    1980-07-01

    MXLKID (MaXimum LiKelihood IDentifier) is a computer program designed to identify unknown parameters in a nonlinear dynamic system. Using noisy measurement data from the system, the maximum likelihood identifier computes a likelihood function (LF). Identification of system parameters is accomplished by maximizing the LF with respect to the parameters. The main body of this report briefly summarizes the maximum likelihood technique and gives instructions and examples for running the MXLKID program. MXLKID is implemented LRLTRAN on the CDC7600 computer at LLNL. A detailed mathematical description of the algorithm is given in the appendices. 24 figures, 6 tables

  4. Electrical compensation by Ga vacancies in Ga2O3

    OpenAIRE

    Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-01-01

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is n...

  5. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

    Science.gov (United States)

    Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

    2018-01-01

    Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

  6. Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs

    International Nuclear Information System (INIS)

    Buyanova, I.A.; Chen, W.M.; Tu, C.W.

    2008-01-01

    In this paper we review our recent results from optical characterization studies of GaInNP. We show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N-induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non-radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type II in the GaInNP/GaAs heterojunctions with [N]>0.5%. For the range of N compositions studied ([N]≤2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at -0.10 eV/%, whereas the valence band offset remains unaffected. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

    Science.gov (United States)

    Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

    2014-01-13

    N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

  8. Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

    International Nuclear Information System (INIS)

    Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

    2013-01-01

    Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

  9. Thermoelastic Stress Field Investigation of GaN Material for Laser Lift-off Technique based on Finite Element Method

    International Nuclear Information System (INIS)

    Ting, Wang; Zhan-Zhong, Cui; Li-Xin, Xu

    2009-01-01

    The transient thermoelastic stress fields of GaN films is analyzed by the finite element method for the laser lift-off (LLO) technique. Stress distributions in GaN films irradiated by pulse laser with different energy densities as functions of time and depth are simulated. The results show that the high thermoelastic stress distributions in GaN films localize within about 1 μm below the GaN/Al 2 O 3 interface using proper laser parameters. It is also found that GaN films can avoid the thermal deformation because the maximum thermoelastic stress 4.28 GPa is much smaller than the yield strength of GaN 15GPa. The effects of laser beam dimension and the thickness of GaN films on stress distribution are also analyzed. The variation range of laser beam dimension as a function of the thickness of GaN films is simulated to keep the GaN films free of thermal deformation. LLO experiments are also carried out. GaN-based light-emitting diodes (LEDs) are separated from sapphire substrates using the parameters obtained from the simulation. Compared with devices before LLO, P–I–V measurements of GaN-based LEDs after LLO show that the electrical and optical characteristics improve greatly, indicating that no stress damage is brought to GaN films using proper parameters obtained by calculation during LLO

  10. Advertising Content

    OpenAIRE

    Simon P. Anderson; Régis Renault

    2002-01-01

    Empirical evidence suggests that most advertisements contain little direct informa- tion. Many do not mention prices. We analyze a firm'ss choice of advertising content and the information disclosed to consumers. A firm advertises only product informa- tion, price information, or both; and prefers to convey only limited product information if possible. Extending the "persuasion" game, we show that quality information takes precedence over price information and horizontal product information.T...

  11. ReGaTE: Registration of Galaxy Tools in Elixir

    DEFF Research Database (Denmark)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric

    2017-01-01

    such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date...... of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE....

  12. Numerical analysis of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells

    International Nuclear Information System (INIS)

    Lin, Shuo; Li, Xirong; Pan, Huaqing; Chen, Huanting; Li, Xiuyan; Li, Yan; Zhou, Jinrong

    2016-01-01

    Highlights: • In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS solar cells are studied by numerical analysis. • Performances of In_xGa_1_−_xN/SnS solar cells enhanced with decreasing In content. • The electron barrier leads to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. • GaN/SnS solar cell exhibits the highest efficiency 26.34%. - Abstract: In this work the photovoltaic properties of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of In_xGa_1_−_xN/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the Al_xGa_1_−_xN/SnS solar cells, there is electron barrier in the Al_xGa_1_−_xN/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.

  13. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

  14. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-01-01

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  15. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  16. Maximum neutron flux in thermal reactors

    International Nuclear Information System (INIS)

    Strugar, P.V.

    1968-12-01

    Direct approach to the problem is to calculate spatial distribution of fuel concentration if the reactor core directly using the condition of maximum neutron flux and comply with thermal limitations. This paper proved that the problem can be solved by applying the variational calculus, i.e. by using the maximum principle of Pontryagin. Mathematical model of reactor core is based on the two-group neutron diffusion theory with some simplifications which make it appropriate from maximum principle point of view. Here applied theory of maximum principle are suitable for application. The solution of optimum distribution of fuel concentration in the reactor core is obtained in explicit analytical form. The reactor critical dimensions are roots of a system of nonlinear equations and verification of optimum conditions can be done only for specific examples

  17. Maximum allowable load on wheeled mobile manipulators

    International Nuclear Information System (INIS)

    Habibnejad Korayem, M.; Ghariblu, H.

    2003-01-01

    This paper develops a computational technique for finding the maximum allowable load of mobile manipulator during a given trajectory. The maximum allowable loads which can be achieved by a mobile manipulator during a given trajectory are limited by the number of factors; probably the dynamic properties of mobile base and mounted manipulator, their actuator limitations and additional constraints applied to resolving the redundancy are the most important factors. To resolve extra D.O.F introduced by the base mobility, additional constraint functions are proposed directly in the task space of mobile manipulator. Finally, in two numerical examples involving a two-link planar manipulator mounted on a differentially driven mobile base, application of the method to determining maximum allowable load is verified. The simulation results demonstrates the maximum allowable load on a desired trajectory has not a unique value and directly depends on the additional constraint functions which applies to resolve the motion redundancy

  18. Maximum phytoplankton concentrations in the sea

    DEFF Research Database (Denmark)

    Jackson, G.A.; Kiørboe, Thomas

    2008-01-01

    A simplification of plankton dynamics using coagulation theory provides predictions of the maximum algal concentration sustainable in aquatic systems. These predictions have previously been tested successfully against results from iron fertilization experiments. We extend the test to data collect...

  19. Assessment of Ga2O3 technology

    Science.gov (United States)

    2016-09-15

    this article has given the emerging technology of GaN a valuable push in term of encouragement to stay with it while the painful technology development...Ga2O3 α-Ga2O3 β-Ga2O3 β-Ga2O3 β-Ga2O3 poly - Ga2O3 β-Ga2O3 Epi-layer Growth Method MBE (ozone) MBE (ozone) MBE (ozone) Mist-CVD MBE (ozone... pains to treat the wafer surface with BCl3 RIE to create charges at the interface. The gate contact was also barely a Schottky contact evidenced by

  20. Maximum total organic carbon limit for DWPF melter feed

    International Nuclear Information System (INIS)

    Choi, A.S.

    1995-01-01

    DWPF recently decided to control the potential flammability of melter off-gas by limiting the total carbon content in the melter feed and maintaining adequate conditions for combustion in the melter plenum. With this new strategy, all the LFL analyzers and associated interlocks and alarms were removed from both the primary and backup melter off-gas systems. Subsequently, D. Iverson of DWPF- T ampersand E requested that SRTC determine the maximum allowable total organic carbon (TOC) content in the melter feed which can be implemented as part of the Process Requirements for melter feed preparation (PR-S04). The maximum TOC limit thus determined in this study was about 24,000 ppm on an aqueous slurry basis. At the TOC levels below this, the peak concentration of combustible components in the quenched off-gas will not exceed 60 percent of the LFL during off-gas surges of magnitudes up to three times nominal, provided that the melter plenum temperature and the air purge rate to the BUFC are monitored and controlled above 650 degrees C and 220 lb/hr, respectively. Appropriate interlocks should discontinue the feeding when one or both of these conditions are not met. Both the magnitude and duration of an off-gas surge have a major impact on the maximum TOC limit, since they directly affect the melter plenum temperature and combustion. Although the data obtained during recent DWPF melter startup tests showed that the peak magnitude of a surge can be greater than three times nominal, the observed duration was considerably shorter, on the order of several seconds. The long surge duration assumed in this study has a greater impact on the plenum temperature than the peak magnitude, thus making the maximum TOC estimate conservative. Two models were used to make the necessary calculations to determine the TOC limit

  1. Maximum-Likelihood Detection Of Noncoherent CPM

    Science.gov (United States)

    Divsalar, Dariush; Simon, Marvin K.

    1993-01-01

    Simplified detectors proposed for use in maximum-likelihood-sequence detection of symbols in alphabet of size M transmitted by uncoded, full-response continuous phase modulation over radio channel with additive white Gaussian noise. Structures of receivers derived from particular interpretation of maximum-likelihood metrics. Receivers include front ends, structures of which depends only on M, analogous to those in receivers of coherent CPM. Parts of receivers following front ends have structures, complexity of which would depend on N.

  2. Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Bu, Yuyu [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan); Li, Liuan, E-mail: liliuan@mail.sysu.edu.cn [School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan)

    2017-07-31

    Highlights: • AlGaN/GaN ISFETs were fabricated and evaluated with thermal oxidation treatment. • Sensitivity was improved to 57.7 mV/pH after 700 °C treatment. • Sensitivity became poor after 800 °C treatment. • The pure α-Al{sub 2}O{sub 3} crystal phase generated on the surface of the 700 °C treatment sample. • Ga{sub 2}O{sub 3} phase content in the metal oxide layer increased after 800 °C treatment. - Abstract: In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al{sub 2}O{sub 3} phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

  3. Radioimmunodetection of tumor with Ga-67 labeled antibodies

    International Nuclear Information System (INIS)

    Furukawa, Takako; Endo, Keigo; Ohmomo, Yoshiro

    1986-01-01

    Antibodies against tumor associated antigen; anti-AFP polyclonal antibody, anti-thyroglobulin monoclonal antibody and anti-hCG monoclonal antibody, were labeled with Ga-67, using deferoxamine (DF) as a bifunctional chelating agent. The immunoreactivity and in vivo stability of the Ga-67 labeled antibodies were examined. The effect of DF conjugation to antibodies on the antigen-binding activity was evaluated by RIA and Scatchard analysis or tanned sheep red blood cell hemagglutination technique. When DF was conjugated to antibody at the molar ratio of 1 : 1, the antibody activity of the DF-conjugated antibodies was fully retained. Whereas, in heavily conjugated antibodies, the maximum antigen binding capacity was reduced. Biodistribution study in normal mice demonstrated the high in vivo stability of Ga-67 labeled antibodies. The labeling of DF-antibody conjugated with Ga-67 was performed easily and quickly, with a high labeling efficiency, requiring no further purification. Thus, this labeling method, providing in vivo stability of Ga-67 labeled antibody and full retention of immunoreactivity, would be useful for the radioimmunodetection of various cancers. (author)

  4. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Khir, Farah Liyana Muhammad, E-mail: 21001899@student.uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Myers, Matthew, E-mail: Matt.Myers@csiro.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Earth Science and Resource Engineering, Kensington, Western Australia 6151 (Australia); Podolska, Anna [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Exploration Geophysics, Curtin University of Technology, 26 Dick Perry Avenue, ARRC, Kensington, Western Australia 6151 (Australia); Sanders, Tarun Maruthi [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray V., E-mail: murray.baker@uwa.edu.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Nener, Brett D., E-mail: brett.nener@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta, E-mail: giacinta.parish@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

    2014-09-30

    Highlights: • Soft X-ray was used to study the surface chemistry of GaN and AlGaN. • The surface chemistry and sensor behaviour were investigated. • The oxide of aluminum is significantly more reactive than gallium. • The Cl{sup −} ions are greater in GaN samples compared to AlGaN samples. - Abstract: Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p{sub 1/2} and Cl 2p{sub 3/2} peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  5. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.

    2013-10-02

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

  6. Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

    2007-01-01

    Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

  7. Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

    Directory of Open Access Journals (Sweden)

    Peter Kordos

    2005-01-01

    Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

  8. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

    Energy Technology Data Exchange (ETDEWEB)

    Gladyshev, A. G., E-mail: andrey.gladyshev@connector-optics.com; Novikov, I. I.; Karachinsky, L. Ya.; Denisov, D. V. [Connector Optics OOO (Russian Federation); Blokhin, S. A.; Blokhin, A. A.; Nadtochiy, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Kurochkin, A. S. [St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation); Egorov, A. Yu. [Connector Optics OOO (Russian Federation)

    2016-09-15

    The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

  9. Wide bandgap engineering of (AlGa)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

    2014-01-01

    Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

  10. GA microwave window development

    International Nuclear Information System (INIS)

    Moeller, C.P.; Kasugai, A.; Sakamoto, K.; Takahashi, K.

    1994-10-01

    The GA prototype distributed window was tested in a 32 mm diam. waveguide system at a power density suitable for a MW gyrotron, using the JAERI/Toshiba 110 GHz long pulse internal converter gyrotron in the JAERI test stand. The presence of the untilted distributed window had no adverse effect on the gyrotron operation. A pulse length of 10 times the calculated thermal equilibrium time (1/e time) of 30 msec was reached, and the window passed at least 750 pulses greater than 30 msec and 343 pulses greater than 60 msec. Beyond 100 msec, the window calorimetry reached steady state, allowing the window dissipation to be measured in a single pulse. The measured loss of 4.0% agrees both with the estimated loss, on which the stress calculations are based, and with the attenuation measured at low power in the HE 11 mode. After the end of the tests, the window was examined; no evidence of arcing air coating was found in the part of the window directly illuminated by the microwaves, although there was discoloration in a recess containing an optical diagnostic which outgassed, causing a local discharge to occur in that recess. Finally, there was no failure of the metal-sapphire joints during a total operating time of 50 seconds consisting of pulses longer than 30 msec

  11. Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Winzer, Andreas T.

    2008-10-28

    The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

  12. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar

    2016-06-07

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  13. Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

    International Nuclear Information System (INIS)

    Hsu, H P; Sitarek, P; Huang, Y S; Liu, P W; Lin, J M; Lin, H H; Tiong, K K

    2006-01-01

    The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAs multiple quantum wells (MQWs) have been investigated by using phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS). The features originated from different portions of the samples, including interband transitions of MQWs, interfaces and GaAs, are observed and identified through a detailed comparison of the obtained spectra and theoretical calculation. A red-shift of the interband transitions and a broader lineshape of the fundamental transition are observed from samples grown under Sb exposure compared to the reference sample grown without interruption. The results can be interpreted in terms of both increases in Sb content and mixing of Sb in the GaAs interface layers. An additional feature has been observed below the GaAs region in the samples with Sb treatment. The probable origin of this additional feature is discussed

  14. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

    2016-01-01

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  15. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  16. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  17. Reduced oxygen at high altitude limits maximum size.

    Science.gov (United States)

    Peck, L S; Chapelle, G

    2003-11-07

    The trend towards large size in marine animals with latitude, and the existence of giant marine species in polar regions have long been recognized, but remained enigmatic until a recent study showed it to be an effect of increased oxygen availability in sea water of a low temperature. The effect was apparent in data from 12 sites worldwide because of variations in water oxygen content controlled by differences in temperature and salinity. Another major physical factor affecting oxygen content in aquatic environments is reduced pressure at high altitude. Suitable data from high-altitude sites are very scarce. However, an exceptionally rich crustacean collection, which remains largely undescribed, was obtained by the British 1937 expedition from Lake Titicaca on the border between Peru and Bolivia in the Andes at an altitude of 3809 m. We show that in Lake Titicaca the maximum length of amphipods is 2-4 times smaller than other low-salinity sites (Caspian Sea and Lake Baikal).

  18. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  19. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

    Science.gov (United States)

    Ketterson, Andrew A.; Masselink, William T.; Gedymin, Jon S.; Klem, John; Peng, Chin-Kun

    1986-01-01

    High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

  20. Effect of partial substitution of Fe by Mn in Ni{sub 55}Fe{sub 19}Ga{sub 26} on its microstructure and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Sudip Kumar, E-mail: sudips@barc.gov.in [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Biswas, Aniruddha [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Babu, P.D.; Kaushik, S.D. [UGC–DAE Consortium for Scientific Research, Mumbai Centre, Mumbai 400 085 (India); Srivastava, Amita [Seismology Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Siruguri, Vasudeva [UGC–DAE Consortium for Scientific Research, Mumbai Centre, Mumbai 400 085 (India); Krishnan, Madangopal [Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2014-02-15

    Highlights: • Effect of Mn in Ni{sub 55}Fe{sub 19}Ga{sub 26} on microstructure and MCE is presented. • Mn stabilizes 14M martensite in place of NM martensite. • Increasing Mn also leads to a drastic reduction in γ-phase content. • MCE shows significant improvement with increasing Mn. • A maximum value of ΔS{sub M}= −19.8 J/kg K has been observed at 9 T for the Mn-10 alloy. -- Abstract: Ni–Fe–Ga-based Ferromagnetic Shape Memory Alloys (FSMAs) show considerable formability because of the presence of a disordered FCC γ-phase, but they lack in magnetocaloric property. Addition of Mn has been explored as a way to improve their magnetocaloric property. The current study presents a detailed structural and magnetization analyses of a two-phase ternary Ni{sub 55}Fe{sub 19}Ga{sub 26} alloy and its quaternary counterparts obtained by partial replacement of Fe by Mn, Ni{sub 55}Fe{sub 19−x}Mn{sub x}Ga{sub 26} (x = 2.5, 2.75, 3, 5, 10). Characterization of these alloys has been carried out using Optical and Scanning Electron Microscopy, Electron Probe Microanalysis, X-ray (XRD) and Neutron Diffraction (ND), Transmission Electron Microscopy (TEM), Differential Scanning Calorimetry (DSC) and DC magnetization measurement. Ni{sub 55}Fe{sub 19}Ga{sub 26} alloy shows predominantly non-modulated (NM) internally-twinned martensite, with traces of a modulated 14M martensite and the parent L2{sub 1} phase along with the FCC γ-phase. Quaternary addition of Mn in partial replacement of Fe stabilizes 14M martensite, drastically reduces the amount of γ-phase, keeps the martensitic transition temperatures unchanged, but raises T{sub C} considerably. Magnetocaloric effect improves significantly with increasing Mn-content and a maximum value of −19.8 J/kg K for ΔS{sub M} has been observed at 9 T for the alloy containing 10 at.% Mn.

  1. /sup 67/Ga lung scan

    Energy Technology Data Exchange (ETDEWEB)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.; Pick, R.

    1977-03-21

    Twenty-three patients with clinical signs of pulmonary embolic disease and lung infiltrates were studied to determine the value of gallium citrate /sup 67/Ga lung scan in differentiating embolic from inflammatory lung disease. In 11 patients without angiographically proved embolism, only seven had corresponding ventilation-perfusion defects compatible with inflammatory disease. In seven of these 11 patients, the /sup 67/Ga concentration indicated inflammatory disease. In the 12 patients with angiographically proved embolic disease, six had corresponding ventilation-perfusion defects compatible with inflammatory disease. None had an accumulation of /sup 67/Ga in the area of pulmonary infiltrate. Thus, ventilation-perfusion lung scans are of limited value when lung infiltrates are present. In contrast, the accumulation of /sup 67/Ga in the lung indicates an inflammatory process. Gallium imaging can help select those patients with lung infiltrates who need angiography.

  2. Changes in Moisture, Protein, and Fat Content of Fish and Rice Flour Coextrudates during Single-Screw Extrusion Cooking

    Energy Technology Data Exchange (ETDEWEB)

    Jaya Shankar Tumuluru; Shahab Sokhansanj; Sukumar Bandyopadhyay; A. S. Bawa

    2013-02-01

    Changes in proximate composition of fish and rice flour coextrudates like moisture, protein, and fat content were studied with respect to extrusion process v ariables like barrel temperature, x1 (100–200 degrees C); screw speed, x2 (70–110 rpm); fish content of the feed, x3 (5–45 percent); and feed moisture content, x4 (20–60 percent). Experiments were conducted at five levels of the process variables based on rotatable experimental design. Response surface models (RSM) were developed that adequately described the changes in moisture, protein, and fat content of the extrudates based on the coeff icient of determination (R2) values of 0.95, 0.99, and 0.94. ANOVA analysis indicated that extrudate moisture content was influenced by x4, protein content by x1 and x3, and fat content by x3 and x4 at P < 0.001. Trends based on response surf ace plots indicated that the x1 of about 200 degrees C, x2 of about 90 rpm, x3 of about 25%, and x4 of about 20% minimized the moisture in the extrudates. Protein content was maximized at x1 of 100 degrees C, x2 > 80 rpm, x3 of about 45 percent, and x4 > 50 percent, and fat content was minimized at x1 of about 200 degrees C, x2 of about 85–95 rpm, x3 < 15 percent, and x4 of about >50 percent. Optimized process variables based on a genetic algorithm (GA) for minimum moisture and fat content and maximum protein content were x1 = 199.86, x2 = 109.86, x3 = 32.45, x4 = 20.03; x1 = 199.71, x2 = 90.09, x3 = 15.27, x4 = 58.47; and x1 = 102.97, x2 = 107.67, x3 = 44.56, x4 = 59.54. The predicted values were 17.52 percent, 0.57 percent, and 46.65 percent. Based on the RSM and GA analy sis, extrudate moisture and protein content was influenced by x1, x3, and x4 and fat content by x2, x3, and x4.

  3. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    International Nuclear Information System (INIS)

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  4. Maximum gravitational redshift of white dwarfs

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Teukolsky, S.A.

    1976-01-01

    The stability of uniformly rotating, cold white dwarfs is examined in the framework of the Parametrized Post-Newtonian (PPN) formalism of Will and Nordtvedt. The maximum central density and gravitational redshift of a white dwarf are determined as functions of five of the nine PPN parameters (γ, β, zeta 2 , zeta 3 , and zeta 4 ), the total angular momentum J, and the composition of the star. General relativity predicts that the maximum redshifts is 571 km s -1 for nonrotating carbon and helium dwarfs, but is lower for stars composed of heavier nuclei. Uniform rotation can increase the maximum redshift to 647 km s -1 for carbon stars (the neutronization limit) and to 893 km s -1 for helium stars (the uniform rotation limit). The redshift distribution of a larger sample of white dwarfs may help determine the composition of their cores

  5. Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

    Energy Technology Data Exchange (ETDEWEB)

    Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

    2008-07-01

    The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

  6. Comparison of {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC PET/CT imaging in the same patient group with neuroendocrine tumours

    Energy Technology Data Exchange (ETDEWEB)

    Kabasakal, Levent [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Cerrahpasa Tip Fakultesi, Nukleer Tip Anabilim Dali, Aksaray, Istanbul (Turkey); Demirci, Emre; Uslu, Ilhami; Kanmaz, Bedii [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Ocak, Meltem; Araman, Ahmet; Ozsoy, Yildiz [Istanbul University, Department of Pharmaceutical Technology, Pharmacy Faculty, Istanbul (Turkey); Decristoforo, Clemens [Medical University of Innsbruck, Clinical Department of Nuclear Medicine, Innsbruck (Austria)

    2012-08-15

    Recent studies have suggested that positron emission tomography (PET) imaging with {sup 68}Ga-labelled DOTA-somatostatin analogues (SST) like octreotide and octreotate is useful in diagnosing neuroendocrine tumours (NETs) and has superior value over both CT and planar and single photon emission computed tomography (SPECT) somatostatin receptor scintigraphy (SRS). The aim of the present study was to evaluate the role of {sup 68}Ga-DOTA-1-NaI{sup 3}-octreotide ({sup 68}Ga-DOTANOC) in patients with SST receptor-expressing tumours and to compare the results of {sup 68}Ga-DOTA-D-Phe{sup 1}-Tyr{sup 3}-octreotate ({sup 68}Ga-DOTATATE) in the same patient population. Twenty SRS were included in the study. Patients' age (n = 20) ranged from 25 to 75 years (mean 55.4 {+-} 12.7 years). There were eight patients with well-differentiated neuroendocrine tumour (WDNET) grade1, eight patients with WDNET grade 2, one patient with poorly differentiated neuroendocrine carcinoma (PDNEC) grade 3 and one patient with mixed adenoneuroendocrine tumour (MANEC). All patients had two consecutive PET studies with {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC. All images were evaluated visually and maximum standardized uptake values (SUV{sub max}) were also calculated for quantitative evaluation. On visual evaluation both tracers produced equally excellent image quality and similar body distribution. The physiological uptake sites of pituitary and salivary glands showed higher uptake in {sup 68}Ga-DOTATATE images. Liver and spleen uptake values were evaluated as equal. Both {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC were negative in 6 (30 %) patients and positive in 14 (70 %) patients. In {sup 68}Ga-DOTANOC images only 116 of 130 (89 %) lesions could be defined and 14 lesions were missed because of lack of any uptake. SUV{sub max} values of lesions were significantly higher on {sup 68}Ga-DOTATATE images. Our study demonstrated that the images obtained by {sup 68}Ga-DOTATATE and {sup 68}Ga

  7. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    OpenAIRE

    Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

    2017-01-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

  8. Substitutional Co dopant on the GaAs(110) surface: A first principles study

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Zhou; Yi, Zhijun, E-mail: zhijunyi@cumt.edu.cn

    2016-12-01

    Using the first principles ground state method, the electronic properties of single Co dopant replacing one Ga atom on the GaAs(110) surface are studied. Our calculated local density of states (LDOS) at Co site presents several distinct peaks above the valence band maximum (VBM), and this agrees with recent experiments. Moreover, the calculated STM images at bias voltages of 2 eV and −2 eV also agree with experiments. We discussed the origin of Co impurity induced distinct peaks, which can be characterized with the hybridization between Co d orbitals and p-like orbitals of surface As and Ga atoms.

  9. Calcium as a nonradiative recombination center in InGaN

    KAUST Repository

    Shen, Jimmy-Xuan

    2017-01-13

    Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

  10. Calcium as a nonradiative recombination center in InGaN

    KAUST Repository

    Shen, Jimmy-Xuan; Wickramaratne, Darshana; Dreyer, Cyrus E.; Alkauskas, Audrius; Young, Erin; Speck, James S.; Van de Walle, Chris G.

    2017-01-01

    Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

  11. Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

    International Nuclear Information System (INIS)

    Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

    2014-01-01

    High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

  12. Maximum entropy analysis of EGRET data

    DEFF Research Database (Denmark)

    Pohl, M.; Strong, A.W.

    1997-01-01

    EGRET data are usually analysed on the basis of the Maximum-Likelihood method \\cite{ma96} in a search for point sources in excess to a model for the background radiation (e.g. \\cite{hu97}). This method depends strongly on the quality of the background model, and thus may have high systematic unce...... uncertainties in region of strong and uncertain background like the Galactic Center region. Here we show images of such regions obtained by the quantified Maximum-Entropy method. We also discuss a possible further use of MEM in the analysis of problematic regions of the sky....

  13. The Maximum Resource Bin Packing Problem

    DEFF Research Database (Denmark)

    Boyar, J.; Epstein, L.; Favrholdt, L.M.

    2006-01-01

    Usually, for bin packing problems, we try to minimize the number of bins used or in the case of the dual bin packing problem, maximize the number or total size of accepted items. This paper presents results for the opposite problems, where we would like to maximize the number of bins used...... algorithms, First-Fit-Increasing and First-Fit-Decreasing for the maximum resource variant of classical bin packing. For the on-line variant, we define maximum resource variants of classical and dual bin packing. For dual bin packing, no on-line algorithm is competitive. For classical bin packing, we find...

  14. Shower maximum detector for SDC calorimetry

    International Nuclear Information System (INIS)

    Ernwein, J.

    1994-01-01

    A prototype for the SDC end-cap (EM) calorimeter complete with a pre-shower and a shower maximum detector was tested in beams of electrons and Π's at CERN by an SDC subsystem group. The prototype was manufactured from scintillator tiles and strips read out with 1 mm diameter wave-length shifting fibers. The design and construction of the shower maximum detector is described, and results of laboratory tests on light yield and performance of the scintillator-fiber system are given. Preliminary results on energy and position measurements with the shower max detector in the test beam are shown. (authors). 4 refs., 5 figs

  15. Topics in Bayesian statistics and maximum entropy

    International Nuclear Information System (INIS)

    Mutihac, R.; Cicuttin, A.; Cerdeira, A.; Stanciulescu, C.

    1998-12-01

    Notions of Bayesian decision theory and maximum entropy methods are reviewed with particular emphasis on probabilistic inference and Bayesian modeling. The axiomatic approach is considered as the best justification of Bayesian analysis and maximum entropy principle applied in natural sciences. Particular emphasis is put on solving the inverse problem in digital image restoration and Bayesian modeling of neural networks. Further topics addressed briefly include language modeling, neutron scattering, multiuser detection and channel equalization in digital communications, genetic information, and Bayesian court decision-making. (author)

  16. Density estimation by maximum quantum entropy

    International Nuclear Information System (INIS)

    Silver, R.N.; Wallstrom, T.; Martz, H.F.

    1993-01-01

    A new Bayesian method for non-parametric density estimation is proposed, based on a mathematical analogy to quantum statistical physics. The mathematical procedure is related to maximum entropy methods for inverse problems and image reconstruction. The information divergence enforces global smoothing toward default models, convexity, positivity, extensivity and normalization. The novel feature is the replacement of classical entropy by quantum entropy, so that local smoothing is enforced by constraints on differential operators. The linear response of the estimate is proportional to the covariance. The hyperparameters are estimated by type-II maximum likelihood (evidence). The method is demonstrated on textbook data sets

  17. Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

    Science.gov (United States)

    Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

    2016-05-01

    The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

  18. Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

    2017-08-15

    GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  20. Investigation of Cu(In,Ga)Se{sub 2} using Monte Carlo and the cluster expansion technique

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Christian D.R.; Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz (Germany); Windeln, Johannes [IBM Germany, Mgr. Technology Center ISC EMEA, Mainz (Germany)

    2010-07-01

    CIGS based solar cells are among the most promising thin-film techniques for cheap, yet efficient modules. They have been investigated for many years, but the full potential of CIGS cells has not yet been exhausted and many effects are not understood. For instance, the band gap of the absorber material Cu(In,Ga)Se{sub 2} varies with Ga content. The question why solar cells with high Ga content have low efficiencies, despite the fact that the band gap should have the optimum value, is still unanswered. We are using Monte Carlo simulations in combination with a cluster expansion to investigate the homogeneity of the In-Ga distribution as a possible cause of the low efficiency of cells with high Ga content. The cluster expansion is created by a fit to ab initio electronic structure energies. The results we found are crucial for the processing of solar cells, shed light on structural properties and give hints on how to significantly improve solar cell performance. Above the transition temperature from the separated to the mixed phase, we observe different sizes of the In and Ga domains for a given temperature. The In domains in the Ga-rich compound are smaller and less abundant than the Ga domains in the In-rich compound. This translates into the Ga-rich material being less homogeneous.

  1. Metallurgical processing and properties of multifilamentary V3Ga composite wires

    International Nuclear Information System (INIS)

    Howe, D.G.; Weinman, L.S.

    1976-01-01

    Multifilamentary composite wires of V - 6.1 at. percent Ga filaments in a Cu-17.5 at. percent Ga matrix were fabricated. High purity V and Ga were arc melted and cast to form an alloy rod. High purity Cu and Ga were induction melted and also cast as an alloy rod. The alloy rods were reduced in diameter by swaging. The larger diameter Cu - Ga matrix rod was drilled with 19 holes which terminated within the matrix-rod. The holes served as receptacles for 19 V-Ga rods which were inserted into the matrix. The composite assembly was evacuated under high vacuum and sealed by an electron beam weld. The composite was then reduced in diameter through swaging and wire drawing to 0.032-in. dia wire. V 3 Ga layers at the filament/matrix interface were formed through an isothermal solid-state reaction. Growth rates for V 3 Ga are strongly influenced by alloy composition and formation temperature, with more rapid growth occurring in composite wires with higher Ga contents. Improved critical current densities (J/sub c/) resulted from lower formation temperatures, J/sub c/ values of over 1 x 10 6 A/cm 2 in a transverse magnetic field of 100 kG were obtained in the multifilamentary composite wire. 9 figs

  2. Nonsymmetric entropy and maximum nonsymmetric entropy principle

    International Nuclear Information System (INIS)

    Liu Chengshi

    2009-01-01

    Under the frame of a statistical model, the concept of nonsymmetric entropy which generalizes the concepts of Boltzmann's entropy and Shannon's entropy, is defined. Maximum nonsymmetric entropy principle is proved. Some important distribution laws such as power law, can be derived from this principle naturally. Especially, nonsymmetric entropy is more convenient than other entropy such as Tsallis's entropy in deriving power laws.

  3. Maximum speed of dewetting on a fiber

    NARCIS (Netherlands)

    Chan, Tak Shing; Gueudre, Thomas; Snoeijer, Jacobus Hendrikus

    2011-01-01

    A solid object can be coated by a nonwetting liquid since a receding contact line cannot exceed a critical speed. We theoretically investigate this forced wetting transition for axisymmetric menisci on fibers of varying radii. First, we use a matched asymptotic expansion and derive the maximum speed

  4. Maximum potential preventive effect of hip protectors

    NARCIS (Netherlands)

    van Schoor, N.M.; Smit, J.H.; Bouter, L.M.; Veenings, B.; Asma, G.B.; Lips, P.T.A.M.

    2007-01-01

    OBJECTIVES: To estimate the maximum potential preventive effect of hip protectors in older persons living in the community or homes for the elderly. DESIGN: Observational cohort study. SETTING: Emergency departments in the Netherlands. PARTICIPANTS: Hip fracture patients aged 70 and older who

  5. Maximum gain of Yagi-Uda arrays

    DEFF Research Database (Denmark)

    Bojsen, J.H.; Schjær-Jacobsen, Hans; Nilsson, E.

    1971-01-01

    Numerical optimisation techniques have been used to find the maximum gain of some specific parasitic arrays. The gain of an array of infinitely thin, equispaced dipoles loaded with arbitrary reactances has been optimised. The results show that standard travelling-wave design methods are not optimum....... Yagi–Uda arrays with equal and unequal spacing have also been optimised with experimental verification....

  6. correlation between maximum dry density and cohesion

    African Journals Online (AJOL)

    HOD

    represents maximum dry density, signifies plastic limit and is liquid limit. Researchers [6, 7] estimate compaction parameters. Aside from the correlation existing between compaction parameters and other physical quantities there are some other correlations that have been investigated by other researchers. The well-known.

  7. Weak scale from the maximum entropy principle

    Science.gov (United States)

    Hamada, Yuta; Kawai, Hikaru; Kawana, Kiyoharu

    2015-03-01

    The theory of the multiverse and wormholes suggests that the parameters of the Standard Model (SM) are fixed in such a way that the radiation of the S3 universe at the final stage S_rad becomes maximum, which we call the maximum entropy principle. Although it is difficult to confirm this principle generally, for a few parameters of the SM, we can check whether S_rad actually becomes maximum at the observed values. In this paper, we regard S_rad at the final stage as a function of the weak scale (the Higgs expectation value) vh, and show that it becomes maximum around vh = {{O}} (300 GeV) when the dimensionless couplings in the SM, i.e., the Higgs self-coupling, the gauge couplings, and the Yukawa couplings are fixed. Roughly speaking, we find that the weak scale is given by vh ˜ T_{BBN}2 / (M_{pl}ye5), where ye is the Yukawa coupling of electron, T_BBN is the temperature at which the Big Bang nucleosynthesis starts, and M_pl is the Planck mass.

  8. The maximum-entropy method in superspace

    Czech Academy of Sciences Publication Activity Database

    van Smaalen, S.; Palatinus, Lukáš; Schneider, M.

    2003-01-01

    Roč. 59, - (2003), s. 459-469 ISSN 0108-7673 Grant - others:DFG(DE) XX Institutional research plan: CEZ:AV0Z1010914 Keywords : maximum-entropy method, * aperiodic crystals * electron density Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.558, year: 2003

  9. Achieving maximum sustainable yield in mixed fisheries

    NARCIS (Netherlands)

    Ulrich, Clara; Vermard, Youen; Dolder, Paul J.; Brunel, Thomas; Jardim, Ernesto; Holmes, Steven J.; Kempf, Alexander; Mortensen, Lars O.; Poos, Jan Jaap; Rindorf, Anna

    2017-01-01

    Achieving single species maximum sustainable yield (MSY) in complex and dynamic fisheries targeting multiple species (mixed fisheries) is challenging because achieving the objective for one species may mean missing the objective for another. The North Sea mixed fisheries are a representative example

  10. 5 CFR 534.203 - Maximum stipends.

    Science.gov (United States)

    2010-01-01

    ... maximum stipend established under this section. (e) A trainee at a non-Federal hospital, clinic, or medical or dental laboratory who is assigned to a Federal hospital, clinic, or medical or dental... Administrative Personnel OFFICE OF PERSONNEL MANAGEMENT CIVIL SERVICE REGULATIONS PAY UNDER OTHER SYSTEMS Student...

  11. Minimal length, Friedmann equations and maximum density

    Energy Technology Data Exchange (ETDEWEB)

    Awad, Adel [Center for Theoretical Physics, British University of Egypt,Sherouk City 11837, P.O. Box 43 (Egypt); Department of Physics, Faculty of Science, Ain Shams University,Cairo, 11566 (Egypt); Ali, Ahmed Farag [Centre for Fundamental Physics, Zewail City of Science and Technology,Sheikh Zayed, 12588, Giza (Egypt); Department of Physics, Faculty of Science, Benha University,Benha, 13518 (Egypt)

    2014-06-16

    Inspired by Jacobson’s thermodynamic approach, Cai et al. have shown the emergence of Friedmann equations from the first law of thermodynamics. We extend Akbar-Cai derivation http://dx.doi.org/10.1103/PhysRevD.75.084003 of Friedmann equations to accommodate a general entropy-area law. Studying the resulted Friedmann equations using a specific entropy-area law, which is motivated by the generalized uncertainty principle (GUP), reveals the existence of a maximum energy density closed to Planck density. Allowing for a general continuous pressure p(ρ,a) leads to bounded curvature invariants and a general nonsingular evolution. In this case, the maximum energy density is reached in a finite time and there is no cosmological evolution beyond this point which leaves the big bang singularity inaccessible from a spacetime prospective. The existence of maximum energy density and a general nonsingular evolution is independent of the equation of state and the spacial curvature k. As an example we study the evolution of the equation of state p=ωρ through its phase-space diagram to show the existence of a maximum energy which is reachable in a finite time.

  12. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2005-09-01

    Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Efficiency Drop in Green InGaN /GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

    Science.gov (United States)

    Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele; Rodrigues, Walter; Di Carlo, Aldo

    2016-01-01

    White light emitting diodes (LEDs) based on III-nitride InGaN /GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c -plane InGaN /GaN -based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

  14. Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

    KAUST Repository

    Ajia, Idris A.

    2017-12-18

    We investigate the effects of V-pits on the optical properties of a state-of-the art highly efficient, blue InGaN/GaN multi-quantum-well (MQW) light emitting diode (LED) with high internal quantum efficiency (IQE) of > 80%. The LED is structurally enhanced by incorporating pre-MQW InGaN strain-relief layer with low InN content and patterned sapphire substrate. For comparison, a conventional (unenhanced) InGaN/GaN MQW LED (with IQE of 46%) grown under similar conditions was subjected to the same measurements. Scanning transmission electron microscopy (STEM) reveals the absence of V-pits in the unenhanced LED, whereas in the enhanced LED, V-pits with {10-11} facets, emerging from threading dislocations (TDs) were prominent. Cathodoluminescence mapping reveals the luminescence properties near the V-pits, showing that the formation of V-pit defects can encourage the growth of defect-neutralizing barriers around TD defect states. The diminished contribution of TDs in the MQWs allows indium-rich localization sites to act as efficient recombination centers. Photoluminescence and time-resolved spectroscopy measurements suggest that the V-pits play a significant role in the generated carrier rate and droop mechanism, showing that the quantum confined Stark effect is suppressed at low generated carrier density, after which the carrier dynamics and droop are governed by the carrier overflow effect.

  15. Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jae-Hoon Lee

    2014-01-01

    Full Text Available A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111 substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET, fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

  16. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN HEMT channel

    Science.gov (United States)

    Mikhailovich, S. V.; Galiev, R. R.; Zuev, A. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Khabibullin, R. A.

    2017-08-01

    Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies ( f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate-drain voltage was determined. The influence of L g and the drain-source voltage on vinj has been studied.

  17. Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

    International Nuclear Information System (INIS)

    Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

    2006-01-01

    We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

  18. Seeking the epoch of maximum luminosity for dusty quasars

    International Nuclear Information System (INIS)

    Vardanyan, Valeri; Weedman, Daniel; Sargsyan, Lusine

    2014-01-01

    Infrared luminosities νL ν (7.8 μm) arising from dust reradiation are determined for Sloan Digital Sky Survey (SDSS) quasars with 1.4 maximum at any redshift z < 5, reaching a plateau for z ≳ 3 with maximum luminosity νL ν (7.8 μm) ≳ 10 47 erg s –1 ; luminosity functions show one quasar Gpc –3 having νL ν (7.8 μm) > 10 46.6 erg s –1 for all 2 maximum luminosity has not yet been identified at any redshift below 5. The most ultraviolet luminous quasars, defined by rest frame νL ν (0.25 μm), have the largest values of the ratio νL ν (0.25 μm)/νL ν (7.8 μm) with a maximum ratio at z = 2.9. From these results, we conclude that the quasars most luminous in the ultraviolet have the smallest dust content and appear luminous primarily because of lessened extinction. Observed ultraviolet/infrared luminosity ratios are used to define 'obscured' quasars as those having >5 mag of ultraviolet extinction. We present a new summary of obscured quasars discovered with the Spitzer Infrared Spectrograph and determine the infrared luminosity function of these obscured quasars at z ∼ 2.1. This is compared with infrared luminosity functions of optically discovered, unobscured quasars in the SDSS and in the AGN and Galaxy Evolution Survey. The comparison indicates comparable numbers of obscured and unobscured quasars at z ∼ 2.1 with a possible excess of obscured quasars at fainter luminosities.

  19. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

    Science.gov (United States)

    Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

    2017-11-08

    Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

  20. Characteristics of CuIn{sub 1−x}Ga{sub x}S{sub 2} thin films synthesized by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Ajili, Mejda, E-mail: ajili.mejda@yahoo.fr [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis El Manar 2092 (Tunisia); Castagné, Michel [Institut d’Electronique du Sud, Université de Montpellier II, Sciences et Techniques du Languedoc, case courrier 083. Place Eugène BATAILLON, 34 095 Montpellier cedex 05 (France); Kamoun Turki, Najoua [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis El Manar 2092 (Tunisia)

    2014-06-01

    CuIn{sub 1−x}Ga{sub x}S{sub 2} multi-component semiconductors thin films were prepared by chemical spray pyrolysis on glass substrates using different concentrations of gallium in the spray solutions (y=([Ga{sup 3+}]/[In{sup 3+}]) varying from 0 to 20 at% by a step of 5 at%). Samples were characterized using X-ray diffraction, Raman spectroscopy, Atomic Force Microscopy, photoluminescence spectroscopy, spectrophotometric and Hall effect measurements. The X-ray spectra reveal that the CuIn{sub 1−x}Ga{sub x}S{sub 2} thin films are of chalcopyrite crystalline phase with a highly (1 1 2) preferential orientation. The best crystallinity is obtained for 10 at% Ga incorporation since the maximum (1 1 2) peak intensity and grain size are obtained at this Ga incorporation rate. The level of the residual microstrain and dislocation network seems to be reduced respectively to the values 0.09% and 4×10{sup 8} lines mm{sup −2} for an optimum y=10 at% for which the crystallinity of CuIn{sub 1−x}Ga{sub x}S{sub 2} thin layers is the best one. Raman spectra indicate that the sprayed thin films are grown only with CH-ordering. Optical analysis by means of transmission T(λ) and reflection R(λ) measurements allow us to determine the direct band gap energy value which increases by increasing the Ga content and it is in the range 1.39–1.53 eV, indicating that CuIn{sub 1−x}Ga{sub x}S{sub 2} compound has an absorbing property favorable for applications in solar cell devices. Photoluminescence measurements are performed on CuIn{sub 1−x}Ga{sub x}S{sub 2} crystals and the analysis reveals that the emission is mainly due to donor–acceptor pair transitions. The film resistivity (ρ) and Hall mobility (μ) are strongly affected by Ga incorporation rate. The lowest resistivity (ρ=0.1 Ω cm) and maximum value of Hall mobility (μ=0.5 cm{sup 2} V{sup −1} s{sup −1}) are also obtained for the thin layers prepared with y=10 at%. Finally, we reported two new structures for Cu

  1. Mid-infrared studies of GaAs/AlGaAs quantum cascade structures

    International Nuclear Information System (INIS)

    Keightley, Peter Thomas

    2001-01-01

    waveguide losses of this design, and the temperature performance is compared with that of a InGaAs/lnAIAs QC laser. The GaAs/AIGaAs laser exhibits a stronger temperature dependence of the threshold current density (J th ), limiting its maximum operating temperature to ∼180K. Design modifications are employed to study the role of upper lasing level confinement, and an improvement in the low temperature performance is achieved by increasing the height of a single active region barrier. However, this modification does not affect the temperature performance. A systematic study of the effect of varying the bridging region doping concentration has been performed. Interband spectroscopic techniques are employed to confirm a variation in doping concentration between the samples studied, and it is demonstrated that J th is strongly dependent on the bridging region doping concentration. The lowest J th is found to correspond to the highest doping concentration. Preliminary results are presented for a GaAs/AlGaAs QC laser incorporating InGaAs monolayers within the active region QWs, in order to increase the effective conduction band discontinuity. It is demonstrated that the lasing wavelength can be reduced significantly using this technique. (author)

  2. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  3. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  4. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  5. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  6. Free Flowing Content

    DEFF Research Database (Denmark)

    Cass, Andrew Knox; Kravchenko, Mariia

    2017-01-01

    Higher education institutions are moving to exploit information andcommunication technologies by increasing the use of videos both online and inclass. This is led, by definition, by ‘early adopters’ and most of the research intothis process reflects this. Increasingly, institutions are making...... strategic decisionsto move courses online however, some teachers involved are not well equippedto transition. The barriers are reported to be time constraints and a lack offamiliarity with the technology to make video. Also, there is a fear of the‘presented self’ where teachers may initially resent the idea...... do not secure theintegrity of the learning. This paper sets out the methods used to assist teacherstake the maximum benefit of their existing content as presentation style lecturesand utilize them for video recording suitable for both flipped and online classes.A central theme is removing the fear...

  7. Radioactivity content of books

    International Nuclear Information System (INIS)

    Lalit, B.Y.; Shukla, V.K.; Ramachandran, T.V.

    1981-01-01

    The natural and fallout radioactivity was measured in a large number of books produced in various countries after 1955. Results of these measurements showed that the books contained radioactivity due to fallout 137 Cs and 226 Ra, 228 Th and 40 K radioisotopes of primordial origin. Books printed in the U.S.A. had low radioactivity of 40K and 226 Ra origin compared to books printed in the European subcontinent. Books printed during high fallout rate (1962-64) or thereafter did not exhibit any significantly higher 137 Cs levels. The maximum radiation dose to the eyes calculated for the radioactivity content of the books was 0.8 μR/hr and the minimum was 0.07 μR/hr; most of the books were in the range 0.3-0.5 μR/hr. (U.K.)

  8. Influence of strain on the growth of thick InGaN layers

    International Nuclear Information System (INIS)

    Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

    2008-01-01

    The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

  9. Structural and Electrochemical Consequences of Al and Ga Cosubstitution in Li7La3Zr2O12 Solid Electrolytes.

    Science.gov (United States)

    Rettenwander, Daniel; Redhammer, Günther; Preishuber-Pflügl, Florian; Cheng, Lei; Miara, Lincoln; Wagner, Reinhard; Welzl, Andreas; Suard, Emmanuelle; Doeff, Marca M; Wilkening, Martin; Fleig, Jürgen; Amthauer, Georg

    2016-04-12

    Several "Beyond Li-Ion Battery" concepts such as all solid-state batteries and hybrid liquid/solid systems envision the use of a solid electrolyte to protect Li-metal anodes. These configurations are very attractive due to the possibility of exceptionally high energy densities and high (dis)charge rates, but they are far from being realized practically due to a number of issues including high interfacial resistance and difficulties associated with fabrication. One of the most promising solid electrolyte systems for these applications is Al or Ga stabilized Li 7 La 3 Zr 2 O 12 (LLZO) based on high ionic conductivities and apparent stability against reduction by Li metal. Nevertheless, the fabrication of dense LLZO membranes with high ionic conductivity and low interfacial resistances remains challenging; it definitely requires a better understanding of the structural and electrochemical properties. In this study, the phase transition from garnet ( Ia 3̅ d , No. 230) to "non-garnet" ( I 4̅3 d , No. 220) space group as a function of composition and the different sintering behavior of Ga and Al stabilized LLZO are identified as important factors in determining the electrochemical properties. The phase transition was located at an Al:Ga substitution ratio of 0.05:0.15 and is accompanied by a significant lowering of the activation energy for Li-ion transport to 0.26 eV. The phase transition combined with microstructural changes concomitant with an increase of the Ga/Al ratio continuously improves the Li-ion conductivity from 2.6 × 10 -4 S cm -1 to 1.2 × 10 -3 S cm -1 , which is close to the calculated maximum for garnet-type materials. The increase in Ga content is also associated with better densification and smaller grains and is accompanied by a change in the area specific resistance (ASR) from 78 to 24 Ω cm 2 , the lowest reported value for LLZO so far. These results illustrate that understanding the structure-properties relationships in this class of materials

  10. Maximum concentrations at work and maximum biologically tolerable concentration for working materials 1991

    International Nuclear Information System (INIS)

    1991-01-01

    The meaning of the term 'maximum concentration at work' in regard of various pollutants is discussed. Specifically, a number of dusts and smokes are dealt with. The valuation criteria for maximum biologically tolerable concentrations for working materials are indicated. The working materials in question are corcinogeneous substances or substances liable to cause allergies or mutate the genome. (VT) [de

  11. 75 FR 43840 - Inflation Adjustment of the Ordinary Maximum and Aggravated Maximum Civil Monetary Penalties for...

    Science.gov (United States)

    2010-07-27

    ...-17530; Notice No. 2] RIN 2130-ZA03 Inflation Adjustment of the Ordinary Maximum and Aggravated Maximum... remains at $250. These adjustments are required by the Federal Civil Penalties Inflation Adjustment Act [email protected] . SUPPLEMENTARY INFORMATION: The Federal Civil Penalties Inflation Adjustment Act of 1990...

  12. Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

    International Nuclear Information System (INIS)

    Jiang, Xin-he; Shi, Jun-jie; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Zhang, Min; Wang, Xihua

    2014-01-01

    The problem of achieving high light extraction efficiency in Al-rich Al x Ga 1−x N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich Al x Ga 1−x N alloy using the Heyd–Scuseria–Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew–Burke–Ernzerhof functional, in which the spin–orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich Al x Ga 1−x N. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN) m /(GaN) n (m>n) superlattice (SL) substituting for Al-rich Al x Ga 1−x N disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p x - and p y -like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E⊥c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN) m /(GaN) n SL is analyzed in depth. (paper)

  13. Musts with Increased Lignan Content Through Addition of Lignan Extracts

    Czech Academy of Sciences Publication Activity Database

    Balík, J.; Híc, P.; Kulichová, J.; Novotná, P.; Tříska, Jan; Vrchotová, Naděžda; Strohalm, J.; Lefnerová, D.; Houška, M.

    2017-01-01

    Roč. 10, č. 7 (2017), s. 1367-1373 ISSN 1935-5130 R&D Projects: GA MŠk(CZ) LO1415; GA MZe QJ1210258 Institutional support: RVO:67179843 Keywords : Enrichment of must * Lignans (HMR, CONI) * Antioxidant activity * Total polyphenol content Subject RIV: GM - Food Processing OBOR OECD: Environmental sciences (social aspects to be 5.7) Impact factor: 2.576, year: 2016

  14. Long-term trends in the total electron content

    Czech Academy of Sciences Publication Activity Database

    Laštovička, Jan; Urbář, Jaroslav; Kozubek, Michal

    2017-01-01

    Roč. 44, č. 16 (2017), s. 8186-8172 ISSN 0094-8276 R&D Projects: GA ČR(CZ) GA15-03909S Institutional support: RVO:68378289 Keywords : total electron content * long-term trend * solar control Subject RIV: DG - Athmosphere Sciences, Meteorology OBOR OECD: Climatic research Impact factor: 4.253, year: 2016 http://onlinelibrary.wiley.com/doi/10.1002/2017GL075063/full

  15. Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Gonzalez-Posada, F.; Kreissig, U.; Di Forte Poisson, M.-A.; Brana, A.F.; Munoz, E.

    2008-01-01

    The Al content in Al x Ga 1-x N/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1 0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis

  16. Zipf's law, power laws and maximum entropy

    International Nuclear Information System (INIS)

    Visser, Matt

    2013-01-01

    Zipf's law, and power laws in general, have attracted and continue to attract considerable attention in a wide variety of disciplines—from astronomy to demographics to software structure to economics to linguistics to zoology, and even warfare. A recent model of random group formation (RGF) attempts a general explanation of such phenomena based on Jaynes' notion of maximum entropy applied to a particular choice of cost function. In the present paper I argue that the specific cost function used in the RGF model is in fact unnecessarily complicated, and that power laws can be obtained in a much simpler way by applying maximum entropy ideas directly to the Shannon entropy subject only to a single constraint: that the average of the logarithm of the observable quantity is specified. (paper)

  17. Maximum-entropy description of animal movement.

    Science.gov (United States)

    Fleming, Chris H; Subaşı, Yiğit; Calabrese, Justin M

    2015-03-01

    We introduce a class of maximum-entropy states that naturally includes within it all of the major continuous-time stochastic processes that have been applied to animal movement, including Brownian motion, Ornstein-Uhlenbeck motion, integrated Ornstein-Uhlenbeck motion, a recently discovered hybrid of the previous models, and a new model that describes central-place foraging. We are also able to predict a further hierarchy of new models that will emerge as data quality improves to better resolve the underlying continuity of animal movement. Finally, we also show that Langevin equations must obey a fluctuation-dissipation theorem to generate processes that fall from this class of maximum-entropy distributions when the constraints are purely kinematic.

  18. Pareto versus lognormal: a maximum entropy test.

    Science.gov (United States)

    Bee, Marco; Riccaboni, Massimo; Schiavo, Stefano

    2011-08-01

    It is commonly found that distributions that seem to be lognormal over a broad range change to a power-law (Pareto) distribution for the last few percentiles. The distributions of many physical, natural, and social events (earthquake size, species abundance, income and wealth, as well as file, city, and firm sizes) display this structure. We present a test for the occurrence of power-law tails in statistical distributions based on maximum entropy. This methodology allows one to identify the true data-generating processes even in the case when it is neither lognormal nor Pareto. The maximum entropy approach is then compared with other widely used methods and applied to different levels of aggregation of complex systems. Our results provide support for the theory that distributions with lognormal body and Pareto tail can be generated as mixtures of lognormally distributed units.

  19. Maximum likelihood estimation for integrated diffusion processes

    DEFF Research Database (Denmark)

    Baltazar-Larios, Fernando; Sørensen, Michael

    We propose a method for obtaining maximum likelihood estimates of parameters in diffusion models when the data is a discrete time sample of the integral of the process, while no direct observations of the process itself are available. The data are, moreover, assumed to be contaminated...... EM-algorithm to obtain maximum likelihood estimates of the parameters in the diffusion model. As part of the algorithm, we use a recent simple method for approximate simulation of diffusion bridges. In simulation studies for the Ornstein-Uhlenbeck process and the CIR process the proposed method works...... by measurement errors. Integrated volatility is an example of this type of observations. Another example is ice-core data on oxygen isotopes used to investigate paleo-temperatures. The data can be viewed as incomplete observations of a model with a tractable likelihood function. Therefore we propose a simulated...

  20. A Maximum Radius for Habitable Planets.

    Science.gov (United States)

    Alibert, Yann

    2015-09-01

    We compute the maximum radius a planet can have in order to fulfill two constraints that are likely necessary conditions for habitability: 1- surface temperature and pressure compatible with the existence of liquid water, and 2- no ice layer at the bottom of a putative global ocean, that would prevent the operation of the geologic carbon cycle to operate. We demonstrate that, above a given radius, these two constraints cannot be met: in the Super-Earth mass range (1-12 Mearth), the overall maximum that a planet can have varies between 1.8 and 2.3 Rearth. This radius is reduced when considering planets with higher Fe/Si ratios, and taking into account irradiation effects on the structure of the gas envelope.

  1. Maximum parsimony on subsets of taxa.

    Science.gov (United States)

    Fischer, Mareike; Thatte, Bhalchandra D

    2009-09-21

    In this paper we investigate mathematical questions concerning the reliability (reconstruction accuracy) of Fitch's maximum parsimony algorithm for reconstructing the ancestral state given a phylogenetic tree and a character. In particular, we consider the question whether the maximum parsimony method applied to a subset of taxa can reconstruct the ancestral state of the root more accurately than when applied to all taxa, and we give an example showing that this indeed is possible. A surprising feature of our example is that ignoring a taxon closer to the root improves the reliability of the method. On the other hand, in the case of the two-state symmetric substitution model, we answer affirmatively a conjecture of Li, Steel and Zhang which states that under a molecular clock the probability that the state at a single taxon is a correct guess of the ancestral state is a lower bound on the reconstruction accuracy of Fitch's method applied to all taxa.

  2. Using Ga-67/68-DOTATOC for pretherapeutic dosimetry

    International Nuclear Information System (INIS)

    Hofmann, M.; Fitschen, J.; Oei, M.L.; Boerner, A.R.; Knoop, B.O.; Otto, D.; Maecke, H.; Geworski, L.; Knapp, W.H.; Kalbacher, H.

    2002-01-01

    Full text: To date, treatment of somatostatin-positive tumors using Y-90-radiopeptide therapy has gained importance. Because accurate dosimetry is a prerequisite for proper treatment the most precise determination of maximum uptake and the measurement of tracer half-life in tumors and organs is highly desirable. In 12 patients we performed Ga-68-DOTATOC PET and measured the SUVs in tumors and organs 90 min p.i. as maximum tumor uptake. One day later Ga-67-DOTATOC planar scintigraphy (and SPET) were performed 2 / 24 / 48 h p.i.. Organs and tumors were evaluated by ROI techniques yielding in the corresponding half-lives. Absorbed doses were calculated according to MIRD 3.0. SUV varied for liver tumors from 5-15 and from 3 to 9 for bone metastases. The standardized uptake values of organ were 0.8 to 2.5 for liver, 4-10 for spleen and 3-6 for kidneys. The calculated doses varied in a relative broad range (intra- and interindividually). Over all small tumors (< 3 cm) displayed the most uptake and therefore yielded in the highest doses per injected MBq. Dosimetry using 67/68-Ga-DOTATOC PET and planar scintigraphy is feasible and yields in dosimetric data, which may help to adjust injected doses for adequate tumor treatment and avoid unwanted organ toxicity in future therapeutical trials. (author)

  3. Investigation of lattice defects and compositional gradients in Cu(In,Ga)Se{sub 2} thin films for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Department of Semiconductor Devices, Berlin University of Technology, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} absorber layers used in thin-film solar cells exhibit, when grown in a multi-stage process, compositional gradients of gallium and indium, dependent on process parameters such as the Ga content. The high lateral resolution of transmission electron microscopy (TEM) imaging and energy-dispersive X-ray spectroscopy (EDX) allows the determination of lattice defects and the elemental concentrations at identical sample positions. Cross-sectional TEM samples of ZnO/CdS/Cu(In,Ga)Se{sub 2}/Mo/glass stacks were prepared with varying [Ga]/([In]+[Ga]) ratio in the absorber. The shape of the Ga distribution was measured by means of EDX and differs for the various [Ga]/([In]+[Ga]) ratios. Linear (dislocations) and planar defects (stacking faults, microtwins) were studied by means of TEM bright field and dark field images along the lengths of the Cu(In,Ga)Se{sub 2} layers. Strong Ga compositional gradients were found even within individual grains. It appears that these Ga gradients correlate with the occurrence of dislocation networks in large grains (diameter > 1 {mu}m). We assume that these dislocations compensate for lattice mismatch due to the change in composition in this area of the lattice.

  4. Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

    2007-01-01

    Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

  5. Maximum entropy analysis of liquid diffraction data

    International Nuclear Information System (INIS)

    Root, J.H.; Egelstaff, P.A.; Nickel, B.G.

    1986-01-01

    A maximum entropy method for reducing truncation effects in the inverse Fourier transform of structure factor, S(q), to pair correlation function, g(r), is described. The advantages and limitations of the method are explored with the PY hard sphere structure factor as model input data. An example using real data on liquid chlorine, is then presented. It is seen that spurious structure is greatly reduced in comparison to traditional Fourier transform methods. (author)

  6. Production of *sp67*Ga at the Oslo Cyclotron

    International Nuclear Information System (INIS)

    Bjoernstad, T.; Holtebekk, T.

    1983-01-01

    A method for production of *sp67*Ga at the Oslo Cyclotron is described. The method is based on the nuclear reaction *sp68*Zn (p,2n)*sp67*Ga. The target is natural zinc metal of thickness 1.3 mm fixed by a thin alloy layer to a copper disc for efficient cooling during irradiation. By applying a beam of 29 MeV protons, a maximum production yield of approx. 1.8 mCi/*my*Ah was obtained. By demanding a contamination level of *sp66*Ga <=1%, the ''useful'' yield after a decaytime of 88 h is approx. 0.8 mCi/*my*Ah. Gallium has been separated carrierfree from the zinc matrix by cation exchange from 7.5M hydrocloric acid solutions and prepared as citrate complex at pH 5.5. After sterile filtering, autoclavation, pyrogene testing and analysis for iron and zinc, the *sp67*Ga-radiopharmaceutical has been applied in human investigations at the Ullevaal hospital in Oslo. (Auth.)

  7. Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

    Science.gov (United States)

    Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

    2015-01-01

    Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

  8. A Maximum Resonant Set of Polyomino Graphs

    Directory of Open Access Journals (Sweden)

    Zhang Heping

    2016-05-01

    Full Text Available A polyomino graph P is a connected finite subgraph of the infinite plane grid such that each finite face is surrounded by a regular square of side length one and each edge belongs to at least one square. A dimer covering of P corresponds to a perfect matching. Different dimer coverings can interact via an alternating cycle (or square with respect to them. A set of disjoint squares of P is a resonant set if P has a perfect matching M so that each one of those squares is M-alternating. In this paper, we show that if K is a maximum resonant set of P, then P − K has a unique perfect matching. We further prove that the maximum forcing number of a polyomino graph is equal to the cardinality of a maximum resonant set. This confirms a conjecture of Xu et al. [26]. We also show that if K is a maximal alternating set of P, then P − K has a unique perfect matching.

  9. Automatic maximum entropy spectral reconstruction in NMR

    International Nuclear Information System (INIS)

    Mobli, Mehdi; Maciejewski, Mark W.; Gryk, Michael R.; Hoch, Jeffrey C.

    2007-01-01

    Developments in superconducting magnets, cryogenic probes, isotope labeling strategies, and sophisticated pulse sequences together have enabled the application, in principle, of high-resolution NMR spectroscopy to biomolecular systems approaching 1 megadalton. In practice, however, conventional approaches to NMR that utilize the fast Fourier transform, which require data collected at uniform time intervals, result in prohibitively lengthy data collection times in order to achieve the full resolution afforded by high field magnets. A variety of approaches that involve nonuniform sampling have been proposed, each utilizing a non-Fourier method of spectrum analysis. A very general non-Fourier method that is capable of utilizing data collected using any of the proposed nonuniform sampling strategies is maximum entropy reconstruction. A limiting factor in the adoption of maximum entropy reconstruction in NMR has been the need to specify non-intuitive parameters. Here we describe a fully automated system for maximum entropy reconstruction that requires no user-specified parameters. A web-accessible script generator provides the user interface to the system

  10. maximum neutron flux at thermal nuclear reactors

    International Nuclear Information System (INIS)

    Strugar, P.

    1968-10-01

    Since actual research reactors are technically complicated and expensive facilities it is important to achieve savings by appropriate reactor lattice configurations. There is a number of papers, and practical examples of reactors with central reflector, dealing with spatial distribution of fuel elements which would result in higher neutron flux. Common disadvantage of all the solutions is that the choice of best solution is done starting from the anticipated spatial distributions of fuel elements. The weakness of these approaches is lack of defined optimization criteria. Direct approach is defined as follows: determine the spatial distribution of fuel concentration starting from the condition of maximum neutron flux by fulfilling the thermal constraints. Thus the problem of determining the maximum neutron flux is solving a variational problem which is beyond the possibilities of classical variational calculation. This variational problem has been successfully solved by applying the maximum principle of Pontrjagin. Optimum distribution of fuel concentration was obtained in explicit analytical form. Thus, spatial distribution of the neutron flux and critical dimensions of quite complex reactor system are calculated in a relatively simple way. In addition to the fact that the results are innovative this approach is interesting because of the optimization procedure itself [sr

  11. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

    2000-01-01

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

  12. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

    2014-01-01

    Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  14. Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

    International Nuclear Information System (INIS)

    Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.

    2010-01-01

    The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

  15. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  16. Alfalfa variety selection for maximum fiber content, protein and nitrogen fixation

    Energy Technology Data Exchange (ETDEWEB)

    Ruhland, Christopher T. [Minnesota State Univ., Mankato, MN (United States); Knox, John [Minnesota State Univ., Mankato, MN (United States); Ward, Susan [Minnesota State Univ., Mankato, MN (United States); Agarwal, V. J. [Minnesota State Univ., Mankato, MN (United States); Frey, John [Minnesota State Univ., Mankato, MN (United States); Carrow, Duane [Minnesota State Univ., Mankato, MN (United States); Jones, Bruce [Minnesota State Univ., Mankato, MN (United States); Rife, James [Minnesota State Univ., Mankato, MN (United States)

    2012-09-01

    The fertile soils of Southern Minnesota are highly productive from both a natural and agricultural standpoint. We chose to examine potential feedstock in both of these settings as a focus for our study. In part one of this report we detail our findings examining potential feedstock in prairie and wetlands in the Mankato, MN area in 2009. We were able to familiarize ourselves with techniques used to isolate and quantify concentrations of cellulose, hemicellulose and lignin in both a classroom and laboratory setting. These techniques were then used for our experiments that examined the effects of harvest regime, irrigation and salinity on eight potential-feedstock varieties of alfalfa (Medicago sativa).

  17. Spin current and electrical polarization in GaN double-barrier structures

    OpenAIRE

    Litvinov, V. I.

    2007-01-01

    Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

  18. Piezoelectric Field Enhanced Second-Order Nonlinear Optical Susceptibilities in Wurtzite GaN/AlGaN Quantum Wells

    Science.gov (United States)

    Liu, Ansheng; Chuang, S.-L.; Ning, C. Z.; Woo, Alex (Technical Monitor)

    1999-01-01

    Second-order nonlinear optical processes including second-harmonic generation, optical rectification, and difference-frequency generation associated with intersubband transitions in wurtzite GaN/AlGaN quantum well (QW) are investigated theoretically. Taking into account the strain-induced piezoelectric (PZ) effects, we solve the electronic structure of the QW from coupled effective-mass Schrodinger equation and Poisson equation including the exchange-correlation effect under the local-density approximation. We show that the large PZ field in the QW breaks the symmetry of the confinement potential profile and leads to large second-order susceptibilities. We also show that the interband optical pump-induced electron-hole plasma results in an enhancement in the maximum value of the nonlinear coefficients and a redshift of the peak position in the nonlinear optical spectrum. By use of the difference-frequency generation, THz radiation can be generated from a GaN/Al(0.75)Ga(0.25)N with a pump laser of 1.55 micron.

  19. Optical and structural characterization of GaN thin films at different N to Ga flux ratios

    International Nuclear Information System (INIS)

    El-Naggar, Ahmed M.

    2011-01-01

    GaN films were grown on Si(111) substrates under various beam equivalent pressure (BEP) ratios by plasma-assisted molecular beam epitaxy. The optical properties for the grown samples were studied over a wide spectral range from 200 to 3300 nm using the reflectance spectrum only. It was found that increasing the N/Ga BEP ratio from 17.9 to 46.1 increases the refractive index (n) from 2.05 to 2.38 at wavelength 630 nm (for example), while the optical energy gap (E g ) were found to be in the range between 3.325 to 3.35 eV with no specific trend. The structural properties for the grown films were studied through two types of rocking curve measurements; normal rocking curve (ω-scan) and triple axis rocking curve (ω/2θ-scan). It was found that with decreasing the N/Ga ratio from 46.1 to 17.9 the full width at half maximum decreases from 0.62 deg. to 0.58 deg. for ω-scan and from 0.022 deg. to 0.021 deg. for ω/2θ-scan. Thus, our results showed a clear correlation between the optical-structural parameters and the BEP ratios of N and Ga.

  20. Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Schuster, Ellen Ursula

    2007-12-17

    The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

  1. Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

    Science.gov (United States)

    Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

    2017-12-11

    We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN 1-x As x alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.

  2. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-10-19

    By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

  3. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  4. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    International Nuclear Information System (INIS)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick; Xing, Huili; Jena, Debdeep

    2015-01-01

    By the insertion of thin In x Ga 1−x N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors

  5. Somatostatin receptor PET in neuroendocrine tumours: 68Ga-DOTA0,Tyr3-octreotide versus 68Ga-DOTA0-lanreotide.

    Science.gov (United States)

    Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Traub-Weidinger, Tatjana; Uprimny, Christian; von Guggenberg, Elisabeth; Decristoforo, Clemens; Warwitz, Boris; Widmann, Gerlig; Virgolini, Irene Johanna

    2013-02-01

    The aim of this study was to evaluate the impact of (68)Ga-labelled DOTA(0)-lanreotide ((68)Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or (68)Ga-labelled DOTA(0),Tyr(3)-octreotide ((68)Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or (68)Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent (68)Ga-DOTA-LAN PET to evaluate a treatment option with (90)Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 ± 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. (68)Ga-DOTA-LAN and (68)Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of (68)Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p < 0.0001) and for (68)Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p < 0.013), respectively. (68)Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV(max)) regarding the primary tumour in 25 patients (p < 0.003) and regarding the liver in 30 patients (p < 0.009) compared to (68)Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. (68)Ga-DOTA-TOC revealed more tumour sites than (68)Ga

  6. Somatostatin receptor PET in neuroendocrine tumours: {sup 68}Ga-DOTA{sup 0},Tyr{sup 3}-octreotide versus {sup 68}Ga-DOTA{sup 0}-lanreotide

    Energy Technology Data Exchange (ETDEWEB)

    Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Uprimny, Christian; Guggenberg, Elisabeth von; Decristoforo, Clemens; Warwitz, Boris; Virgolini, Irene Johanna [Innsbruck Medical University, Department of Nuclear Medicine, Innsbruck (Austria); Traub-Weidinger, Tatjana [Vienna Medical University, Department of Nuclear Medicine, Vienna (Austria); Widmann, Gerlig [Innsbruck Medical University, Department of Radiology, Innsbruck (Austria)

    2013-03-15

    The aim of this study was to evaluate the impact of {sup 68}Ga-labelled DOTA{sup 0}-lanreotide ({sup 68}Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or {sup 68}Ga-labelled DOTA{sup 0},Tyr{sup 3}-octreotide ({sup 68}Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or {sup 68}Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent {sup 68}Ga-DOTA-LAN PET to evaluate a treatment option with {sup 90}Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 {+-} 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. {sup 68}Ga-DOTA-LAN and {sup 68}Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of {sup 68}Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p < 0.0001) and for {sup 68}Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p < 0.013), respectively. {sup 68}Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV{sub max}) regarding the primary tumour in 25 patients (p < 0.003) and regarding the liver in 30 patients (p < 0.009) compared to {sup 68}Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. {sup 68}Ga

  7. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  8. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  9. Origins of efficient green light emission in phase-separated InGaN quantum wells

    International Nuclear Information System (INIS)

    Lai, Y-L; Liu, C-P; Lin, Y-H; Hsueh, T-H; Lin, R-M; Lyu, D-Y; Peng, Z-X; Lin, T-Y

    2006-01-01

    Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516 nm) and the InGaN matrix (450 nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511 meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341 meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission

  10. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  11. Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

    Energy Technology Data Exchange (ETDEWEB)

    Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

    2010-12-15

    Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

  12. Maximum entropy decomposition of quadrupole mass spectra

    International Nuclear Information System (INIS)

    Toussaint, U. von; Dose, V.; Golan, A.

    2004-01-01

    We present an information-theoretic method called generalized maximum entropy (GME) for decomposing mass spectra of gas mixtures from noisy measurements. In this GME approach to the noisy, underdetermined inverse problem, the joint entropies of concentration, cracking, and noise probabilities are maximized subject to the measured data. This provides a robust estimation for the unknown cracking patterns and the concentrations of the contributing molecules. The method is applied to mass spectroscopic data of hydrocarbons, and the estimates are compared with those received from a Bayesian approach. We show that the GME method is efficient and is computationally fast

  13. Maximum power operation of interacting molecular motors

    DEFF Research Database (Denmark)

    Golubeva, Natalia; Imparato, Alberto

    2013-01-01

    , as compared to the non-interacting system, in a wide range of biologically compatible scenarios. We furthermore consider the case where the motor-motor interaction directly affects the internal chemical cycle and investigate the effect on the system dynamics and thermodynamics.......We study the mechanical and thermodynamic properties of different traffic models for kinesin which are relevant in biological and experimental contexts. We find that motor-motor interactions play a fundamental role by enhancing the thermodynamic efficiency at maximum power of the motors...

  14. Maximum entropy method in momentum density reconstruction

    International Nuclear Information System (INIS)

    Dobrzynski, L.; Holas, A.

    1997-01-01

    The Maximum Entropy Method (MEM) is applied to the reconstruction of the 3-dimensional electron momentum density distributions observed through the set of Compton profiles measured along various crystallographic directions. It is shown that the reconstruction of electron momentum density may be reliably carried out with the aid of simple iterative algorithm suggested originally by Collins. A number of distributions has been simulated in order to check the performance of MEM. It is shown that MEM can be recommended as a model-free approach. (author). 13 refs, 1 fig

  15. On the maximum drawdown during speculative bubbles

    Science.gov (United States)

    Rotundo, Giulia; Navarra, Mauro

    2007-08-01

    A taxonomy of large financial crashes proposed in the literature locates the burst of speculative bubbles due to endogenous causes in the framework of extreme stock market crashes, defined as falls of market prices that are outlier with respect to the bulk of drawdown price movement distribution. This paper goes on deeper in the analysis providing a further characterization of the rising part of such selected bubbles through the examination of drawdown and maximum drawdown movement of indices prices. The analysis of drawdown duration is also performed and it is the core of the risk measure estimated here.

  16. Multi-Channel Maximum Likelihood Pitch Estimation

    DEFF Research Database (Denmark)

    Christensen, Mads Græsbøll

    2012-01-01

    In this paper, a method for multi-channel pitch estimation is proposed. The method is a maximum likelihood estimator and is based on a parametric model where the signals in the various channels share the same fundamental frequency but can have different amplitudes, phases, and noise characteristics....... This essentially means that the model allows for different conditions in the various channels, like different signal-to-noise ratios, microphone characteristics and reverberation. Moreover, the method does not assume that a certain array structure is used but rather relies on a more general model and is hence...

  17. Conductivity maximum in a charged colloidal suspension

    Energy Technology Data Exchange (ETDEWEB)

    Bastea, S

    2009-01-27

    Molecular dynamics simulations of a charged colloidal suspension in the salt-free regime show that the system exhibits an electrical conductivity maximum as a function of colloid charge. We attribute this behavior to two main competing effects: colloid effective charge saturation due to counterion 'condensation' and diffusion slowdown due to the relaxation effect. In agreement with previous observations, we also find that the effective transported charge is larger than the one determined by the Stern layer and suggest that it corresponds to the boundary fluid layer at the surface of the colloidal particles.

  18. Dynamical maximum entropy approach to flocking.

    Science.gov (United States)

    Cavagna, Andrea; Giardina, Irene; Ginelli, Francesco; Mora, Thierry; Piovani, Duccio; Tavarone, Raffaele; Walczak, Aleksandra M

    2014-04-01

    We derive a new method to infer from data the out-of-equilibrium alignment dynamics of collectively moving animal groups, by considering the maximum entropy model distribution consistent with temporal and spatial correlations of flight direction. When bird neighborhoods evolve rapidly, this dynamical inference correctly learns the parameters of the model, while a static one relying only on the spatial correlations fails. When neighbors change slowly and the detailed balance is satisfied, we recover the static procedure. We demonstrate the validity of the method on simulated data. The approach is applicable to other systems of active matter.

  19. Maximum Temperature Detection System for Integrated Circuits

    Science.gov (United States)

    Frankiewicz, Maciej; Kos, Andrzej

    2015-03-01

    The paper describes structure and measurement results of the system detecting present maximum temperature on the surface of an integrated circuit. The system consists of the set of proportional to absolute temperature sensors, temperature processing path and a digital part designed in VHDL. Analogue parts of the circuit where designed with full-custom technique. The system is a part of temperature-controlled oscillator circuit - a power management system based on dynamic frequency scaling method. The oscillator cooperates with microprocessor dedicated for thermal experiments. The whole system is implemented in UMC CMOS 0.18 μm (1.8 V) technology.

  20. Maximum entropy PDF projection: A review

    Science.gov (United States)

    Baggenstoss, Paul M.

    2017-06-01

    We review maximum entropy (MaxEnt) PDF projection, a method with wide potential applications in statistical inference. The method constructs a sampling distribution for a high-dimensional vector x based on knowing the sampling distribution p(z) of a lower-dimensional feature z = T (x). Under mild conditions, the distribution p(x) having highest possible entropy among all distributions consistent with p(z) may be readily found. Furthermore, the MaxEnt p(x) may be sampled, making the approach useful in Monte Carlo methods. We review the theorem and present a case study in model order selection and classification for handwritten character recognition.

  1. Multiperiod Maximum Loss is time unit invariant.

    Science.gov (United States)

    Kovacevic, Raimund M; Breuer, Thomas

    2016-01-01

    Time unit invariance is introduced as an additional requirement for multiperiod risk measures: for a constant portfolio under an i.i.d. risk factor process, the multiperiod risk should equal the one period risk of the aggregated loss, for an appropriate choice of parameters and independent of the portfolio and its distribution. Multiperiod Maximum Loss over a sequence of Kullback-Leibler balls is time unit invariant. This is also the case for the entropic risk measure. On the other hand, multiperiod Value at Risk and multiperiod Expected Shortfall are not time unit invariant.

  2. Maximum a posteriori decoder for digital communications

    Science.gov (United States)

    Altes, Richard A. (Inventor)

    1997-01-01

    A system and method for decoding by identification of the most likely phase coded signal corresponding to received data. The present invention has particular application to communication with signals that experience spurious random phase perturbations. The generalized estimator-correlator uses a maximum a posteriori (MAP) estimator to generate phase estimates for correlation with incoming data samples and for correlation with mean phases indicative of unique hypothesized signals. The result is a MAP likelihood statistic for each hypothesized transmission, wherein the highest value statistic identifies the transmitted signal.

  3. Improved Maximum Parsimony Models for Phylogenetic Networks.

    Science.gov (United States)

    Van Iersel, Leo; Jones, Mark; Scornavacca, Celine

    2018-05-01

    Phylogenetic networks are well suited to represent evolutionary histories comprising reticulate evolution. Several methods aiming at reconstructing explicit phylogenetic networks have been developed in the last two decades. In this article, we propose a new definition of maximum parsimony for phylogenetic networks that permits to model biological scenarios that cannot be modeled by the definitions currently present in the literature (namely, the "hardwired" and "softwired" parsimony). Building on this new definition, we provide several algorithmic results that lay the foundations for new parsimony-based methods for phylogenetic network reconstruction.

  4. Ancestral sequence reconstruction with Maximum Parsimony

    OpenAIRE

    Herbst, Lina; Fischer, Mareike

    2017-01-01

    One of the main aims in phylogenetics is the estimation of ancestral sequences based on present-day data like, for instance, DNA alignments. One way to estimate the data of the last common ancestor of a given set of species is to first reconstruct a phylogenetic tree with some tree inference method and then to use some method of ancestral state inference based on that tree. One of the best-known methods both for tree inference as well as for ancestral sequence inference is Maximum Parsimony (...

  5. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  6. The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

    Science.gov (United States)

    Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-01

    Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

  7. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  8. Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Dinh, Duc V.; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J.; Caliebe, M.; Scholtz, F.

    2014-01-01

    InGaN layers were grown simultaneously on (112 ¯ 2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content ( ¯ 2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112 ¯ 2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112 ¯ 2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112 ¯ 2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112 ¯ 2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  9. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

    Science.gov (United States)

    Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

    2018-05-01

    We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

  10. Site preference and phase stability of Ti doping Ni–Mn–Ga shape memory alloys from first-principles calculations

    International Nuclear Information System (INIS)

    Gao, Zhiyong; Chen, Baishu; Meng, Xianglong; Cai, Wei

    2013-01-01

    Highlights: •Site preference and phase stability of NiMnGaTi are studied by first-principles. •The Ti atoms prefer to occupy the Ga sites in the Ni 2 MnGa austenitic phase. •The phase stability becomes worse when Ga is replaced by Ti. •The phase stability is discussed based on the densities of states. -- Abstract: The effects of Ti content on martensitic transformation and phase stability of Ni 50 Mn 25 Ga 25−x Ti x shape memory alloys were investigated from first-principles calculations based on density functional theory. The formation energy results indicate that the added Ti preferentially occupies the Ga sites in Ni 2 MnGa alloy due to the lowest formation energy. The total energy difference between austenite and martensite increases with Ti alloying, being relevant to the experimentally reported changes in martensitic transformation temperature. The phase stability of Ni 50 Mn 25 Ga 25−x Ti x austenite decreases with increasing Ti content, which results from the reduced Ni 3d–Mn 3d hybridization when Ga is replaced by Ti

  11. Network Inference and Maximum Entropy Estimation on Information Diagrams

    Czech Academy of Sciences Publication Activity Database

    Martin, E.A.; Hlinka, Jaroslav; Meinke, A.; Děchtěrenko, Filip; Tintěra, J.; Oliver, I.; Davidsen, J.

    2017-01-01

    Roč. 7, č. 1 (2017), č. článku 7062. ISSN 2045-2322 R&D Projects: GA ČR GA13-23940S; GA MZd(CZ) NV15-29835A Grant - others:GA MŠk(CZ) LO1611 Institutional support: RVO:67985807 Keywords : complex networks * mutual information * entropy maximization * fMRI Subject RIV: BD - Theory of Information OBOR OECD: Computer sciences, information science, bioinformathics (hardware development to be 2.2, social aspect to be 5.8) Impact factor: 4.259, year: 2016

  12. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

    International Nuclear Information System (INIS)

    Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

    2006-01-01

    We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

  13. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  14. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  15. Genetic algorithms optimized fuzzy logic control for the maximum power point tracking in photovoltaic system

    Energy Technology Data Exchange (ETDEWEB)

    Larbes, C.; Ait Cheikh, S.M.; Obeidi, T.; Zerguerras, A. [Laboratoire des Dispositifs de Communication et de Conversion Photovoltaique, Departement d' Electronique, Ecole Nationale Polytechnique, 10, Avenue Hassen Badi, El Harrach, Alger 16200 (Algeria)

    2009-10-15

    This paper presents an intelligent control method for the maximum power point tracking (MPPT) of a photovoltaic system under variable temperature and irradiance conditions. First, for the purpose of comparison and because of its proven and good performances, the perturbation and observation (P and O) technique is briefly introduced. A fuzzy logic controller based MPPT (FLC) is then proposed which has shown better performances compared to the P and O MPPT based approach. The proposed FLC has been also improved using genetic algorithms (GA) for optimisation. Different development stages are presented and the optimized fuzzy logic MPPT controller (OFLC) is then simulated and evaluated, which has shown better performances. (author)

  16. Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

    2018-04-01

    Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

  17. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2015-01-12

    We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

  18. Objective Bayesianism and the Maximum Entropy Principle

    Directory of Open Access Journals (Sweden)

    Jon Williamson

    2013-09-01

    Full Text Available Objective Bayesian epistemology invokes three norms: the strengths of our beliefs should be probabilities; they should be calibrated to our evidence of physical probabilities; and they should otherwise equivocate sufficiently between the basic propositions that we can express. The three norms are sometimes explicated by appealing to the maximum entropy principle, which says that a belief function should be a probability function, from all those that are calibrated to evidence, that has maximum entropy. However, the three norms of objective Bayesianism are usually justified in different ways. In this paper, we show that the three norms can all be subsumed under a single justification in terms of minimising worst-case expected loss. This, in turn, is equivalent to maximising a generalised notion of entropy. We suggest that requiring language invariance, in addition to minimising worst-case expected loss, motivates maximisation of standard entropy as opposed to maximisation of other instances of generalised entropy. Our argument also provides a qualified justification for updating degrees of belief by Bayesian conditionalisation. However, conditional probabilities play a less central part in the objective Bayesian account than they do under the subjective view of Bayesianism, leading to a reduced role for Bayes’ Theorem.

  19. Efficient heuristics for maximum common substructure search.

    Science.gov (United States)

    Englert, Péter; Kovács, Péter

    2015-05-26

    Maximum common substructure search is a computationally hard optimization problem with diverse applications in the field of cheminformatics, including similarity search, lead optimization, molecule alignment, and clustering. Most of these applications have strict constraints on running time, so heuristic methods are often preferred. However, the development of an algorithm that is both fast enough and accurate enough for most practical purposes is still a challenge. Moreover, in some applications, the quality of a common substructure depends not only on its size but also on various topological features of the one-to-one atom correspondence it defines. Two state-of-the-art heuristic algorithms for finding maximum common substructures have been implemented at ChemAxon Ltd., and effective heuristics have been developed to improve both their efficiency and the relevance of the atom mappings they provide. The implementations have been thoroughly evaluated and compared with existing solutions (KCOMBU and Indigo). The heuristics have been found to greatly improve the performance and applicability of the algorithms. The purpose of this paper is to introduce the applied methods and present the experimental results.

  20. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kryzhanovskaya, N. V., E-mail: NataliaKryzh@gmail.com; Polubavkina, Yu. S. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation); Nevedomskiy, V. N. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Nikitina, E. V.; Lazarenko, A. A. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation); Egorov, A. Yu. [St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation); Maximov, M. V.; Moiseev, E. I.; Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation)

    2017-02-15

    The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.

  1. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

    International Nuclear Information System (INIS)

    Kryzhanovskaya, N. V.; Polubavkina, Yu. S.; Nevedomskiy, V. N.; Nikitina, E. V.; Lazarenko, A. A.; Egorov, A. Yu.; Maximov, M. V.; Moiseev, E. I.; Zhukov, A. E.

    2017-01-01

    The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10"8 cm"–"2 is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.

  2. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    International Nuclear Information System (INIS)

    Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

    2011-01-01

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

  3. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien; Bhattacharya, Pallab

    2012-01-01

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  4. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    International Nuclear Information System (INIS)

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  5. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat

    2012-07-16

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  6. Effect of composition on properties of In2O3-Ga2O3 thin films

    Science.gov (United States)

    Demin, I. E.; Kozlov, A. G.

    2017-06-01

    The In2O3-Ga2O3 mixed oxide polycrystalline thin films with various ratios of components were obtained by pulsed laser deposition. The effect of films composition on surface morphology, electrophysical and gas sensing properties and energies of adsorption and desorption of combustible gases was studied. The films with50%In2O3-50%Ga2O3 composition showed maximum gas response (˜25 times) combined with minimum optimal working temperature (˜530 °C) as compared with the other films. The optical transmittance of the films in visible range was investigated. For 50%In2O3-50%Ga2O3 films, the transmittance is higher in comparison with the other films. The explanation of the dependency of films behaviors on their composition was presented.The In2O3-Ga2O3 films were assumed to have perspectives as gas sensing material for semiconducting gas sensors.

  7. Simulation of electrical characteristics of GaN vertical Schottky diodes

    Science.gov (United States)

    Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

    2016-12-01

    Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

  8. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  9. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  10. Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

    International Nuclear Information System (INIS)

    Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Koehler, K.; Johs, B.

    2000-01-01

    Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, Al x Ga 1-x N (x le 0.16), and In 0.13 Ga 0.87 N were deduced. Further, the dependence of the Al x Ga 1-x N band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the Al x Ga 1-x N gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure

  11. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  12. Gold free contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, Marcin

    2018-01-01

    Transistors and diodes based on AlGaN/GaN are suitable candidates for high-voltage and high-speed electronics due to the GaN material properties such as wide bandgap, large breakdown field, high electron saturation velocity and good thermal conductivity. When thin AlGaN layer is grown epitaxially on

  13. Gas sensing with AlGaN/GaN 2DEG channels

    NARCIS (Netherlands)

    Offermans, P.; Vitushinsky, R.; Crego-Calama, M.; Brongersma, S.H.

    2011-01-01

    AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the

  14. Exploring the radiosynthesis and in vitro characteristics of [68Ga]Ga-DOTA-Siglec-9

    DEFF Research Database (Denmark)

    Jensen, Svend Borup; Käkelä, Meeri; Jødal, Lars

    2017-01-01

    (Siglec-9) "CARLSLSWRGLTLCPSK" bind to VAP-1 and hence makes the radioactive analogues of this compound ([68 Ga]Ga-DOTA-Siglec-9) interesting as a non-invasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [68 Ga]Ga-DOTA-Siglec-9 are presented and compared...

  15. Characterization of GaN/AlGaN epitaxial layers grown

    Indian Academy of Sciences (India)

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

  16. Exciton binding energy in wurtzite InGaN/GaN quantum wells

    International Nuclear Information System (INIS)

    Park, Seoung-Hwan; Kim, Jong-Jae; Kim, Hwa-Min

    2004-01-01

    The internal field and carrier density effects on the exciton binding energies in wurtzite (WZ) InGaN/GaN quantum-well (QW) structures are investigated using the multiband effective-mass theory, and are compared with those obtained from the at-band model and with those of GaN/AlGaN QW structures. The exciton binding energy is significantly reduced with increasing sheet carrier density, suggesting that excitons are nearly bleached at densities around 10 12 cm -2 for both InGaN/GaN and GaN/AlGaN QW structures. With the inclusion of the internal field, the exciton binding energy is substantialy reduced compared to that of the at-band model in the investigated region of the wells. This can be explained by a decrease in the momentum matrix element and an increase in the inverse screening length due to the internal field. The exciton binding energy of the InGaN/GaN structure is smaller than that of the GaN/AlGaN structure because InGaN/GaN structures have a smaller momentum matrix element and a larger inverse screening length than GaN/AlGaN structures.

  17. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Oswald, Jiří; Vyskočil, Jan; Kuldová, Karla; Šimeček, Tomislav; Hazdra, P.; Caha, O.

    2010-01-01

    Roč. 312, č. 8 (2010), 1383-1387 ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.737, year: 2010

  18. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    OpenAIRE

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  19. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  20. Changes of liquid Water content in fog at Milešovka Observatory (Czech Republic)

    Czech Academy of Sciences Publication Activity Database

    Fišák, Jaroslav

    2008-01-01

    Roč. 11, - (2008), s. 5-8 ISSN 1335-339X R&D Projects: GA AV ČR IAA3042301; GA AV ČR 1QS200420562 Institutional research plan: CEZ:AV0Z30420517 Keywords : fog * liquid water content * month changes * Observatory Milešovka * visibility Subject RIV: DG - Athmosphere Sciences, Meteorology