Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Research progress of III-V laser bonding to Si

Science.gov (United States)

Bo, Ren; Yan, Hou; Yanan, Liang

2016-12-01

The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

III-V microelectronics

CERN Document Server

Nougier, JP

1991-01-01

As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

Structure of metal-rich (001) surfaces of III-V compound semiconductors

DEFF Research Database (Denmark)

Kumpf, C.; Smilgies, D.; Landemark, E.

2001-01-01

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

Hybrid III-V/silicon lasers

Science.gov (United States)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Annotated bibliography for liquid metal surface tensions of groups III-A, IV-A, and V-A metals

International Nuclear Information System (INIS)

Murtha, M.J.; Burnet, G.

1976-04-01

An annotated bibliography has been prepared which includes summaries of 82 publications dating from 1920 and dealing with the measurement of the surface tensions of Groups III-A, IV-A, and V-A metals in the liquid state. The bibliography is organized by key element investigated, and contains a tabulation of correlations for surface tension as a function of temperature. A brief discussion dealing with variables and methods has been included

Maturity group classification and maturity locus genotyping of early-maturing soybean varieties from high-latitude cold regions.

Science.gov (United States)

Jia, Hongchang; Jiang, Bingjun; Wu, Cunxiang; Lu, Wencheng; Hou, Wensheng; Sun, Shi; Yan, Hongrui; Han, Tianfu

2014-01-01

With the migration of human beings, advances of agricultural sciences, evolution of planting patterns and global warming, soybeans have expanded to both tropical and high-latitude cold regions (HCRs). Unlike other regions, HCRs have much more significant and diverse photoperiods and temperature conditions over seasons or across latitudes, and HCR soybeans released there show rich diversity in maturity traits. However, HCR soybeans have not been as well classified into maturity groups (MGs) as other places. Therefore, it is necessary to identify MGs in HCRs and to genotype the maturity loci. Local varieties were collected from the northern part of Northeast China and the far-eastern region of Russia. Maturity group reference (MGR) soybeans of MGs MG000, MG00, and MG0 were used as references during field experiments. Both local varieties and MGR soybeans were planted for two years (2010-2011) in Heihe (N 50°15', E 127°27', H 168.5 m), China. The days to VE (emergence), R1 (beginning bloom) and R7 (beginning maturity) were recorded and statistically analyzed. Furthermore, some varieties were further genotyped at four molecularly-identified maturity loci E1, E2, E3 and E4. The HCR varieties were classified into MG0 or even more early-maturing. In Heihe, some varieties matured much earlier than MG000, which is the most early-maturing known MG, and clustered into a separate group. We designated the group as MG0000, following the convention of MGs. HCR soybeans had relatively stable days to beginning bloom from emergence. The HCR varieties diversified into genotypes of E1, E2, E3 and E4. These loci had different effects on maturity. HCRs diversify early-maturing MGs of soybean. MG0000, a new MG that matures much earlier than known MGs, was developed. HCR soybean breeding should focus more on shortening post-flowering reproductive growth. E1, E2, E3, and E4 function differentially.

Compounds of type Ba/sub 2/Bsup(III)Ossup(V)O/sub 6/

Energy Technology Data Exchange (ETDEWEB)

Treiber, U; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

1981-07-01

The black perovskites of type Ba/sub 2/Bsup(III)Ossup(V)O/sub 6/ crystallize cubic (Bsup(III) = Pr, Nd, Sm-Lu, Y) and rhombohedral (Bsup(III) = La) respectively; the cell volumina decrease linearily with (rsub(B)sup(III))/sup 3/. Intensity calculations on powder data for Ba/sub 2/YOsO/sub 6/ (space group Fm3m-Osub(h)/sup 5/) and Ba/sub 2/LaOsO/sub 6/ (space group R-3m-Dsub(3d)/sup 5/) gave the intensity related R'values of 4.6% and 5.0% respectively. The results of the vibrational spectroscopic investigations are reported in common with the bond orders, M-O distances and mean amplitudes and compared with the corresponding values of the series Ba/sub 2/Bsup(III)Irsup(V)O/sub 6/ and Ba/sub 2/Bsup(III)Rusup(V)O/sub 6/.

Subsurface dimerization in III-V semiconductor (001) surfaces

DEFF Research Database (Denmark)

Kumpf, C.; Marks, L.D.; Ellis, D.

2001-01-01

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

III-V semiconductor materials and devices

CERN Document Server

Malik, R J

1989-01-01

The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Flow injection spectrophotometric determination of Fe(III) and V(v)

International Nuclear Information System (INIS)

Elrahman, Azza Mohamed

2000-01-01

Phenylflourone was synthesized with the objective of developing a method for determining Fe(III) and V(V) in the pressence of micelles using flow injectoin technique. Phenylflourone showed a wavelength of maximum absorption at 412 nm which was not affected by the presence of miccelles i.e. n-hexadodecylpyridinum bromide and sodium n-dodecylsulphate, but they have different effects on the absorbance of PHF. The example of PHF-Fe(III) and PHF-V(V) showed the wavelength of the maximum absorption at 4428 nm and 412 nm, respectively. Presence of micelles shifted the wavelength of the two complexes to a lower one. Generally the addition of micelles increased the absorbance of phenylflourone metal ions complexes except for PHF-V(V) with hexadodecylpyridinum bromide. With flow injection technique two approaches were practiced the use of micelle as a carrier or water as a carrier. Sodium n-dodecylsulphate increased the absorbance of the two complexes when it was used as a carrier or added to the metal ions using water as carrier. On the other hand, the use of n-hexadodecylpyridinum bromide as carrieer increased the absorbance of the complexes but it decreased the absorbance when it was used in conjunction with metal ions and water as a carrier. After establishing the optimum FI conditions for PHF-Fe(III) and PHF-V(V) complexes, the calibration curves were construction and produced semiliner response in the concentration range studied. Ti(IV) III, Mo(VI) showed a positive interference in PHF-Fe(III) and PHF-V(V) complexes, respectively.(Author)

Thermal oxidation of III-V compounds

International Nuclear Information System (INIS)

Monteiro, O.R.; Evans, J.W.

1988-01-01

The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-01-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

Laboratory evaluation of ethyl acetate and chloroform: methanol (1:1 v/v extract of Swietenia mahagoni leaf against Japanese Encephalitis vector Culex vishuni group

Directory of Open Access Journals (Sweden)

Utpal Adhikari

2012-12-01

Full Text Available Objective: To study the larvicidal activity of a furniture tree Swietenia mahagoni L. (S. mahagoni against mosquito Culex Vishnui group. Methods: Different concentrations of crude, chloroform: methanol (1:1 v/v and ethyl acetate solvent extracts of S. mahagoni mature leaves were treated against Cx. vishnui group larvae. Results: Five graded concentrations (0.05%, 0.10%, 0.20%, 0.30% and 0.40% of crude extract of mature leaves and five graded concentrations (10 ppm, 20 ppm, 30 ppm, 40 ppm and 50 ppm of chloroform: methanol (1:1 v/v and ethyl acetate solvent extracts showed significant (P<0.05 larval mortalities. LC50, LC90 values were calculated at 24 h, 48 h and 72 h of exposures. Adult Cx. vishnui group mosquitoes exposed to burning coils prepared from S. mahagoni mature leaves showed smoke repellency and toxicity up to 4 h. Conclusions: This study was a pioneer attempt to establish S. mahagoni as an effective mosquito larvicide.

Blood pressure and sexual maturity in adolescents: the Heartfelt Study.

Science.gov (United States)

Cho, S D; Mueller, W H; Meininger, J C; Liehr, P; Chan, W

2001-01-01

This study investigates sexual maturity as a predictor of resting blood pressures independent of other known predictors, in 179 boys and 204 girls 11-16 years of age from the Heartfelt Study. The sample included youth of African (n = 140), Mexican (n = 117), and European and "other" (n = 126) backgrounds. Sexual maturity was assessed during clinical examination of three standard indicators for each sex. Systolic and diastolic blood pressures were higher in children of maturity stages IV and V, compared to stages I-III, in each gender/ethnic group (P maturity for their age group, had significantly higher systolic blood pressures (but not diastolic) than the less advanced in linear models that included height, body mass index (BMI), ethnicity, and age as co-predictors. Diastolic blood pressures were predicted by height in boys and by age and the BMI in girls. This analysis, using a very conservative approach, suggests that sexual maturity provides important and independent information on systolic blood pressure in adolescents. Further investigation of its role in 24-hr blood pressures and in blood pressures taken during physical and emotional stress, is recommended.

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

Science.gov (United States)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

Energy Technology Data Exchange (ETDEWEB)

Winter, Andreas

2009-07-23

Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

Removal of arsenic from water using manganese (III) oxide: Adsorption of As(III) and As(V).

Science.gov (United States)

Babaeivelni, Kamel; Khodadoust, Amid P

2016-01-01

Removal of arsenic from water was evaluated with manganese (III) oxide (Mn2O3) as adsorbent. Adsorption of As(III) and As(V) onto Mn2O3 was favorable according to the Langmuir and Freundlich adsorption equilibrium equations, while chemisorption of arsenic occurred according to the Dubinin-Radushkevich equation. Adsorption parameters from the Langmuir, Freundlich, and Temkin equations showed a greater adsorption and removal of As(III) than As(V) by Mn2O3. Maximum removal of As(III) and As(V) occurred at pH 3-9 and at pH 2, respectively, while removal of As(V) in the pH range of 6-9 was 93% (pH 6) to 61% (pH 9) of the maximum removal. Zeta potential measurements for Mn2O3 in As(III) was likely converted to As(V) solutions indicated that As(III) was likely converted to As(V) on the Mn2O3 surface at pH 3-9. Overall, the effective Mn2O3 sorbent rapidly removed As(III) and As(V) from water in the pH range of 6-9 for natural waters.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Implication of TLR- but not of NOD2-signaling pathways in dendritic cell activation by group B Streptococcus serotypes III and V.

Directory of Open Access Journals (Sweden)

Paul Lemire

Full Text Available Group B Streptococcus (GBS is an important agent of life-threatening invasive infection. It has been previously shown that encapsulated type III GBS is easily internalized by dendritic cells (DCs, and that this internalization had an impact on cytokine production. The receptors underlying these processes are poorly characterized. Knowledge on the mechanisms used by type V GBS to activate DCs is minimal. In this work, we investigated the role of Toll-like receptor (TLR/MyD88 signaling pathway, the particular involvement of TLR2, and that of the intracellular sensing receptor NOD2 in the activation of DCs by types III and V GBS. The role of capsular polysaccharide (CPS, one of the most important GBS virulence factors in bacterial-DC interactions was evaluated using non-encapsulated mutants. Despite differences in the role of CPS between types III and V GBS in bacterial internalization and intracellular survival, no major differences were observed in their capacity to modulate release of cytokines by DC. For both serotypes, CPS had a minor role in this response. Production of cytokines by DCs was shown to strongly rely on MyD88-dependent signaling pathways, suggesting that DCs recognize GBS and become activated mostly through TLR signaling. Yet, GBS-infected TLR2-/- DCs only showed a partial reduction in the production of IL-6 and CXCL1 compared to control DCs. Surprisingly, CXCL10 release by type III or type V GBS-infected DCs was MyD88-independent. No differences in DC activation were observed between NOD2-/- and control DCs. These results demonstrate the involvement of various receptors and the complexity of the cytokine production pathways activated by GBS upon DC infection.

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-04-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

2013-01-01

Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

International Nuclear Information System (INIS)

Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

2006-01-01

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

Hybrid III-V/SOI Resonant Cavity Photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

Fast optical in situ spectroscopy in III-V MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kaspari, C.

2007-09-29

This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

Prepubertal exposure to arsenic(III) suppresses circulating insulin-like growth factor-1 (IGF-1) delaying sexual maturation in female rats.

Science.gov (United States)

Reilly, Michael P; Saca, James C; Hamilton, Alina; Solano, Rene F; Rivera, Jesse R; Whitehouse-Innis, Wendy; Parsons, Jason G; Dearth, Robert K

2014-04-01

Arsenic (As) is a prevalent environmental toxin readily accessible for human consumption and has been identified as an endocrine disruptor. However, it is not known what impact As has on female sexual maturation. Therefore, in the present study, we investigated the effects of prepubertal exposure on mammary gland development and pubertal onset in female rats. Results showed that prepubertal exposure to 10 mg/kg of arsenite (As(III)) delayed vaginal opening (VO) and prepubertal mammary gland maturation. We determined that As accumulates in the liver, disrupts hepatocyte function and suppresses serum levels of the puberty related hormone insulin-like growth factor 1 (IGF-1) in prepubertal animals. Overall, this is the first study to show that prepubertal exposure to As(III) acts peripherally to suppress circulating levels of IGF-1 resulting in delayed sexual maturation. Furthermore, this study identifies a critical window of increased susceptibility to As(III) that may have a lasting impact on female reproductive function. Copyright © 2013 Elsevier Inc. All rights reserved.

Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

2016-01-01

We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

Zwitterion-functionalized polymer microspheres as a sorbent for solid phase extraction of trace levels of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) prior to their determination by ICP-MS.

Science.gov (United States)

Jia, Xiaoyu; Gong, Dirong; Zhao, Junyi; Ren, Hongyun; Wang, Jiani; Zhang, Xian

2018-03-19

This paper describes the preparation of zwitterion-functionalized polymer microspheres (ZPMs) and their application to simultaneous enrichment of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) from environmental water samples. The ZPMs were prepared by emulsion copolymerization of ethyl methacrylate, 2-diethylaminoethyl methacrylate and triethylene glycol dimethyl acrylate followed by modification with 1,3-propanesultone. The components were analyzed by elemental analyses as well as Fourier transform infrared spectroscopy, and the structures were characterized by scanning electron microscopy and transmission electron microscopy. The ZPMs were packed into a mini-column for on-line solid-phase extraction (SPE) of the above metal ions. Following extraction with 40 mM NH 4 NO 3 and 0.5 M HNO 3 solution, the ions were quantified by ICP-MS. Under the optimized conditions, the enrichment factors (from a 40 mL sample) are up to 60 for the ions V(V), As(III), Sb(III) and Hg(II), and 55 for Cr(III) and Sn(IV). The detection limits are 1.2, 3.4, 1.0, 3.7, 2.1 and 1.6 ng L -1 for V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II), respectively, and the relative standard deviations (RSDs) are below 5.2%. The feasibility and accuracy of the method were validated by successfully analyzing six certified reference materials as well as lake, well and river waters. Graphical abstract Zwitterion-functionalized polymer microspheres (ZPMs) were prepared and packed into a mini-column for on-line solid-phase extraction (SPE) via pump 1. Then V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) ions in environmental waters were eluted and submitted to ICP-MS via pump 2.

Subtle interactions and electron transfer between U{sup III}, Np{sup III}, or Pu{sup III} and uranyl mediated by the oxo group

Energy Technology Data Exchange (ETDEWEB)

Arnold, Polly L.; Zegke, Markus; Hollis, Emmalina; Pecharman, Anne-Frederique; Love, Jason B. [EaStCHEM School of Chemistry, University of Edinburgh (United Kingdom); Dutkiewicz, Michal S. [EaStCHEM School of Chemistry, University of Edinburgh (United Kingdom); European Commission, Directorate for Nuclear Safety and Security, Joint Research Centre, Karlsruhe (Germany); Walter, Olaf; Apostolidis, Christos; Magnani, Nicola; Griveau, Jean-Christophe; Colineau, Eric; Caciuffo, Roberto [European Commission, Directorate for Nuclear Safety and Security, Joint Research Centre, Karlsruhe (Germany); Zhang, Xiaobin; Schreckenbach, Georg [Department of Chemistry, University of Manitoba, Winnipeg, MB (Canada)

2016-10-04

A dramatic difference in the ability of the reducing An{sup III} center in AnCp{sub 3} (An=U, Np, Pu; Cp=C{sub 5}H{sub 5}) to oxo-bind and reduce the uranyl(VI) dication in the complex [(UO{sub 2})(THF)(H{sub 2}L)] (L=''Pacman'' Schiff-base polypyrrolic macrocycle), is found and explained. These are the first selective functionalizations of the uranyl oxo by another actinide cation. At-first contradictory electronic structural data are explained by combining theory and experiment. Complete one-electron transfer from Cp{sub 3}U forms the U{sup IV}-uranyl(V) compound that behaves as a U{sup V}-localized single molecule magnet below 4 K. The extent of reduction by the Cp{sub 3}Np group upon oxo-coordination is much less, with a Np{sup III}-uranyl(VI) dative bond assigned. Solution NMR and NIR spectroscopy suggest Np{sup IV}U{sup V} but single-crystal X-ray diffraction and SQUID magnetometry suggest a Np{sup III}-U{sup VI} assignment. DFT-calculated Hirshfeld charge and spin density analyses suggest half an electron has transferred, and these explain the strongly shifted NMR spectra by spin density contributions at the hydrogen nuclei. The Pu{sup III}-U{sup VI} interaction is too weak to be observed in THF solvent, in agreement with calculated predictions. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

First principles calculation of material properties of group IV elements and III-V compounds

Science.gov (United States)

Malone, Brad Dean

This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows: • Chapter 1 contains some of the conceptual foundations used in the present work. These involve the major approximations which allow us to approach the problem of systems with huge numbers of interacting electrons and atomic cores. • Then, in Chapter 2, we discuss one of the major limitations to the DFT formalism introduced in Chapter 1, namely its inability to predict the quasiparticle spectra of materials and in particular the band gap of a semiconductor. We introduce a Green's function approach to the electron self-energy Sigma known as the GW approximation and use it to compute the quasiparticle band structures of a number of group IV and III-V semiconductors. • In Chapter 3 we present a first-principles study of a number of high-pressure metastable phases of Si with tetrahedral bonding. The phases studied include all experimentally determined phases that result from decompression from the metallic beta-Sn phase, specifically the BC8 (Si-III), hexagonal diamond (Si-IV), and R8 (Si-XII). In addition to these, we also study the hypothetical ST12 structure found upon decompression from beta-Sn in germanium. • Our attention is then turned to the first principles calculations of optical properties in Chapter 4. The Bethe-Salpeter equation is then solved to obtain the optical spectrum of this material including electron-hole interactions. The calculated optical spectrum is compared with experimental data for other forms of silicon commonly used in photovoltaic devices, namely the cubic, polycrystalline, and amorphous forms. • In Chapter 5 we present

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Directory of Open Access Journals (Sweden)

Xianshu eLuo

2015-04-01

Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

Results of Operative and Nonoperative Treatment of Rockwood Types III and V Acromioclavicular Joint Dislocation

Science.gov (United States)

Joukainen, Antti; Kröger, Heikki; Niemitukia, Lea; Mäkelä, E. Antero; Väätäinen, Urho

2014-01-01

Background: The optimal treatment of acute, complete dislocation of the acromioclavicular joint (ACJ) is still unresolved. Purpose: To determine the difference between operative and nonoperative treatment in acute Rockwood types III and V ACJ dislocation. Study Design: Randomized controlled trial; Level of evidence, 2. Methods: In the operative treatment group, the ACJ was reduced and fixed with 2 transarticular Kirschner wires and ACJ ligament suturing. The Kirschner wires were extracted after 6 weeks. Nonoperatively treated patients received a reduction splint for 4 weeks. At the 18- to 20-year follow-up, the Constant, University of California at Los Angeles Shoulder Rating Scale (UCLA), Larsen, and Simple Shoulder Test (SST) scores were obtained, and clinical and radiographic examinations of both shoulders were performed. Results: Twenty-five of 35 potential patients were examined at the 18- to 20-year follow-up. There were 11 patients with Rockwood type III and 14 with type V dislocations. Delayed surgical treatment for ACJ was used in 2 patients during follow-up: 1 in the operatively treated group and 1 in the nonoperatively treated group. Clinically, ACJs were statistically significantly less prominent or unstable in the operative group than in the nonoperative group (normal/prominent/unstable: 9/4/3 and 0/6/3, respectively; P = .02) and in the operative type III (P = .03) but not type V dislocation groups. In operatively and nonoperatively treated patients, the mean Constant scores were 83 and 85, UCLA scores 25 and 27, Larsen scores 11 and 11, and SST scores 11 and 12 at follow-up, respectively. There were no statistically significant differences in type III and type V dislocations. In the radiographic analysis, the ACJ was wider in the nonoperative than the operative group (8.3 vs 3.4 mm; P = .004), and in the type V dislocations (nonoperative vs operative: 8.5 vs 2.4 mm; P = .007). There was no statistically significant difference between study groups in

Subtle interactions and electron transfer between UIII, NpIII, or PuIII and uranyl mediated by the oxo group

International Nuclear Information System (INIS)

Arnold, Polly L.; Zegke, Markus; Hollis, Emmalina; Pecharman, Anne-Frederique; Love, Jason B.; Dutkiewicz, Michal S.; Walter, Olaf; Apostolidis, Christos; Magnani, Nicola; Griveau, Jean-Christophe; Colineau, Eric; Caciuffo, Roberto; Zhang, Xiaobin; Schreckenbach, Georg

2016-01-01

A dramatic difference in the ability of the reducing An III center in AnCp 3 (An=U, Np, Pu; Cp=C 5 H 5 ) to oxo-bind and reduce the uranyl(VI) dication in the complex [(UO 2 )(THF)(H 2 L)] (L=''Pacman'' Schiff-base polypyrrolic macrocycle), is found and explained. These are the first selective functionalizations of the uranyl oxo by another actinide cation. At-first contradictory electronic structural data are explained by combining theory and experiment. Complete one-electron transfer from Cp 3 U forms the U IV -uranyl(V) compound that behaves as a U V -localized single molecule magnet below 4 K. The extent of reduction by the Cp 3 Np group upon oxo-coordination is much less, with a Np III -uranyl(VI) dative bond assigned. Solution NMR and NIR spectroscopy suggest Np IV U V but single-crystal X-ray diffraction and SQUID magnetometry suggest a Np III -U VI assignment. DFT-calculated Hirshfeld charge and spin density analyses suggest half an electron has transferred, and these explain the strongly shifted NMR spectra by spin density contributions at the hydrogen nuclei. The Pu III -U VI interaction is too weak to be observed in THF solvent, in agreement with calculated predictions. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

International Nuclear Information System (INIS)

Calleja, E.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Cerutti, L.; Trampert, A.; Jahn, U.; Sanchez, G.; Griol, A.; Sanchez, B.

2007-01-01

The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II-VI or III-V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

Energy Technology Data Exchange (ETDEWEB)

Hermle, Martin

2008-11-27

This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

Energy Technology Data Exchange (ETDEWEB)

Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

1965-10-15

The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

Organic / IV, III-V Semiconductor Hybrid Solar Cells

Directory of Open Access Journals (Sweden)

Pang-Leen Ong

2010-03-01

Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

Thermodynamics of high-pressure ice polymorphs : ices III and V

NARCIS (Netherlands)

Tchijov, [No Value; Ayala, RB; Leon, GC; Nagornov, O

Thermodynamic properties of high-pressure ice polymorphs, ices III and V, are studied theoretically. The results of TIP4P molecular dynamics simulations in the NPT ensemble are used to calculate the temperature dependence of the specific volume of ices III and V at pressures 0.25 and 0.5 GPa,

Methods for enhancing P-type doping in III-V semiconductor films

Science.gov (United States)

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

2017-08-01

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Quantitative STEM on indium containing group III-V semiconductor nanostructures

International Nuclear Information System (INIS)

Mehrtens, Thorsten

2013-01-01

In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

Gender differences in Class III malocclusion.

Science.gov (United States)

Baccetti, Tiziano; Reyes, Brian C; McNamara, James A

2005-07-01

This study evaluated gender differences in the cephalometric records of a large-scale cross-sectional sample of Caucasian subjects with Class III malocclusion at different developmental ages. The purpose also was to provide average age-related and sex-related data for craniofacial measures in untreated Class III subjects that are used as reference in the diagnostic appraisal of the patient with Class III disharmony. The sample examined consisted of 1094 pretreatment lateral cephalometric records (557 female subjects and 537 male subjects) of Caucasian Class III individuals. The age range for female subjects was between three years six months and 57 years seven months. The male subject group ranged from three years three months to 48 years five months. Twelve age groups were identified. Skeletal maturity at different age periods also was determined using the stage of cervical vertebral maturation. Gender differences for all cephalometric variables were analyzed using parametric statistics. The findings of the study indicated that Class III malocclusion is associated with a significant degree of sexual dimorphism in craniofacial parameters, especially from the age of 13 onward. Male subjects with Class III malocclusion present with significantly larger linear dimensions of the maxilla, mandible, and anterior facial heights when compared with female subjects during the circumpubertal and postpubertal periods.

On the Nature of Ultra-faint Dwarf Galaxy Candidates. I. DES1, Eridanus III, and Tucana V

Science.gov (United States)

Conn, Blair C.; Jerjen, Helmut; Kim, Dongwon; Schirmer, Mischa

2018-01-01

We use deep Gemini/GMOS-S g, r photometry to study the three ultra-faint dwarf galaxy candidates DES1, Eridanus III (Eri III), and Tucana V (Tuc V). Their total luminosities, M V (DES1) = ‑1.42 ± 0.50 and M V (Eri III) = ‑2.07 ± 0.50, and mean metallicities, [{Fe}/{{H}}]=-{2.38}-0.19+0.21 and [{Fe}/{{H}}]=-{2.40}-0.12+0.19, are consistent with them being ultra-faint dwarf galaxies, as they fall just outside the 1σ confidence band of the luminosity–metallicity relation for Milky Way satellite galaxies. However, their positions in the size–luminosity relation suggest that they are star clusters. Interestingly, DES1 and Eri III are at relatively large Galactocentric distances, with DES1 located at {D}{GC}=74+/- 4 {kpc} and Eri III at {D}{GC}=91+/- 4 {kpc}. In projection, both objects are in the tail of gaseous filaments trailing the Magellanic Clouds and have similar 3D separations from the Small Magellanic Cloud (SMC): {{Δ }}{D}{SMC,{DES}1}=31.7 kpc and {{Δ }}{D}{SMC,{Eri}{III}}=41.0 kpc, respectively. It is plausible that these stellar systems are metal-poor SMC satellites. Tuc V represents an interesting phenomenon in its own right. Our deep photometry at the nominal position of Tuc V reveals a low-level excess of stars at various locations across the GMOS field without a well-defined center. An SMC Northern Overdensity–like isochrone would be an adequate match to the Tuc V color–magnitude diagram, and the proximity to the SMC (12.°1 {{Δ }}{D}{SMC,{Tuc}{{V}}}=13 kpc) suggests that Tuc V is either a chance grouping of stars related to the SMC halo or a star cluster in an advanced stage of dissolution.

Blood groups and acute aortic dissection type III.

Science.gov (United States)

Fatic, Nikola; Nikolic, Aleksandar; Vukmirovic, Mihailo; Radojevic, Nemanja; Zornic, Nenad; Banzic, Igor; Ilic, Nikola; Kostic, Dusan; Pajovic, Bogdan

2017-04-01

Acute aortic type III dissection is one of the most catastrophic events, with in-hospital mortality ranging between 10% and 12%. The majority of patients are treated medically, but complicated dissections, which represent 15% to 20% of cases, require surgical or thoracic endovascular aortic repair (TEVAR). For the best outcomes adequate blood transfusion support is required. Interest in the relationship between blood type and vascular disease has been established. The aim of our study is to evaluate distribution of blood groups among patients with acute aortic type III dissection and to identify any kind of relationship between blood type and patient's survival. From January 2005 to December 2014, 115 patients with acute aortic type III dissection were enrolled at the Clinic of Vascular and Endovascular Surgery in Belgrade, Serbia and retrospectively analyzed. Patients were separated into two groups. The examination group consisted of patients with a lethal outcome, and the control group consisted of patients who survived. The analysis of the blood groups and RhD typing between groups did not reveal a statistically significant difference ( p = 0.220). Our results indicated no difference between different blood groups and RhD typing with respect to in-hospital mortality of patients with acute aortic dissection type III.

Investigation of Clostridium botulinum group III's mobilome content.

Science.gov (United States)

Woudstra, Cédric; Le Maréchal, Caroline; Souillard, Rozenn; Anniballi, Fabrizio; Auricchio, Bruna; Bano, Luca; Bayon-Auboyer, Marie-Hélène; Koene, Miriam; Mermoud, Isabelle; Brito, Roseane B; Lobato, Francisco C F; Silva, Rodrigo O S; Dorner, Martin B; Fach, Patrick

2018-02-01

Clostridium botulinum group III is mainly responsible for botulism in animals. It could lead to high animal mortality rates and, therefore, represents a major environmental and economic concern. Strains of this group harbor the botulinum toxin locus on an unstable bacteriophage. Since the release of the first complete C. botulinum group III genome sequence (strain BKT015925), strains have been found to contain others mobile elements encoding for toxin components. In this study, seven assays targeting toxin genes present on the genetic mobile elements of C. botulinum group III were developed with the objective to better characterize C. botulinum group III strains. The investigation of 110 C. botulinum group III strains and 519 naturally contaminated samples collected during botulism outbreaks in Europe showed alpha-toxin and C2-I/C2-II markers to be systematically associated with type C/D bont-positive samples, which may indicate an important role of these elements in the pathogenicity mechanisms. On the contrary, bont type D/C strains and the related positive samples appeared to contain almost none of the markers tested. Interestingly, 31 bont-negative samples collected on farms after a botulism outbreak revealed to be positive for some of the genetic mobile elements tested. This suggests loss of the bont phage, either in farm environment after the outbreak or during laboratory handling. Copyright © 2017 Elsevier Ltd. All rights reserved.

Relationship between type III-V radio and hard X-ray bursts

International Nuclear Information System (INIS)

Stewart, R.T.

1978-01-01

Type III-V radio bursts are found to be closely associated with impulsive hard X-ray bursts. Probably 0.1% to 1% of the fast electrons in the X-ray source region escape to heights >0.1 solar radii in the corona and excite the type III-V burst. (Auth.)

Cacotheline as an oxidimetric reagent. Determination of Sn(II), Cu(I), Ti(III), Fe(II), V(II) and V(III)

International Nuclear Information System (INIS)

Nemani Murty, K.; Yedluri Rao, P.; Geddada Chalam, K.

1982-01-01

Sn(II), Ti(III), Cu(I),Fe(II), V(III) and V(II) can be titrated potentiometrically with cacotheline in 1-4 M hydrochloric acid, 0.5-2 M hydrochloric acid, 0.5-1.5 M sulphuric acid in presence of 4 ml of 10% EDTA solution in a total volume of 50 ml, 9-10 M phosphoric acid, 4-8 M acetic acid and 3-8 M acetic acid respectively. Cacotheline can be used for the assay of tin plate and solder. The cacotheline undergoes a 2-electron reduction reaction. A cacotheline solution (0.005 M) in 0.02 M hydrochloric acid is fairly stable for several months. The conditional redox potentials of cacotheline have been determined in sulphuric, phosphoric and acetic acid medium. (Author)

Cleavage mechanoluminescence in elemental and III-V semiconductors

International Nuclear Information System (INIS)

Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

2003-01-01

The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

Aggressive antisocial behaviors are related to character maturity in young Swedish violent offenders independent of ADHD

Directory of Open Access Journals (Sweden)

Thomas Nilsson

2016-11-01

Full Text Available Background: Antisocial personality and psychopathic traits have constantly been found to accompany criminal and aggressive behaviors, but little attention has been given to aspects of character maturity and its relation to such behaviors. The present study investigated 1 whether level of character maturity (low, medium, and high is associated with amount of aggressive antisocial behaviors and psychopathic traits in young men imprisoned for violent criminality, and 2 whether such an association is independent of coexisting attention deficit hyperactivity disorder (ADHD.Methods: Swedish males (N=270, aged 18-25 sentenced to prison for violent and/or sexual criminality in the western region of the Swedish Prison and Probation Service underwent a thorough clinical examination during their incarceration. Data on character maturity as measured by the character dimensions Self-Directedness and Cooperativeness of the Temperament and Character Inventory were available for n=148 subjects, and used to divide these offenders into three groups with low, medium, and high character maturity. These groups were then compared for variables reflecting criminal history, a DSM-IV diagnosis of ADHD, Conduct disorder (CD and substance use disorders (SUD, aggressive behaviors, and psychopathic traits.Results: Character maturity was consistently associated with less aggressive antisocial behaviors and psychopathic personality traits; the group with the highest character maturity showed; i a later age at onset of criminality, ii a smaller number of prior violent criminal acts, iii lower prevalences of ADHD, CD, and SUD, iv less self-rated and expert-rated aggressive behaviors, and v less psychopathic traits. The association between character maturity and aggressive behaviors/psychopathic personality traits remained even when ADHD was controlled for. The only exception was sexual criminality, where the group with the highest character maturity contained the largest amount

Ethnic Identity and Social-Cognitive Maturity in a Multicultural Group Experience

Science.gov (United States)

Johnson, Jennifer M.; Lambie, Glenn W.

2013-01-01

This study examined a multicultural group experience on students' ("N"= 94) ethnic identity development and social-cognitive maturity. Although no differences were identified between treatment and comparison group participants, group therapeutic factors scores were predictive of ethnic identity development and social-cognitive…

III-V/Si wafer bonding using transparent, conductive oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

2015-06-29

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Development of III-V/Si Multijunction Space Photovoltaics

Data.gov (United States)

National Aeronautics and Space Administration — High substrate costs, as well as weight, typically play a major role in the high costs of multijunction space solar cell production and deployment. III-V/Si...

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\\bar{1}) p-type GaN grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Nonoda, Ryohei; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Katayama, Ryuji; Matsuoka, Takashi

2016-05-01

The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar (000\\bar{1}) p-type GaN grown by metalorganic vapor phase epitaxy were studied. Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. For the lightly doped samples, the band-to-acceptor emission was observed at 3.3 eV and its relative intensity decreased with increasing V/III ratio. For the heavily doped samples, the donor-acceptor pair emission was observed at 2.8 eV and its peak intensity monotonically decreased with V/III ratio. The hole concentration was maximum for the Mg/Ga ratio. This is the same tendency as in group-III polar (0001) growth. The V/III ratio also reduced the hole concentration. The higher V/III ratio reduced the concentration of residual donors such as oxygen by substituting nitrogen atoms. The surface became rougher with increasing V/III ratio and the hillock density increased.

III-V quantum light source and cavity-QED on silicon.

Science.gov (United States)

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

2018-04-17

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

National Research Council Canada - National Science Library

Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

2000-01-01

...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

The extraction behaviour of As(III) and As(V) in APDC-CCl4 system

International Nuclear Information System (INIS)

Yang Ruiying; Zhu Xuping

1997-01-01

The extraction and back-extraction behaviour of As(III) and As(V) in APDC-CCl 4 system have been studied by using 76 As trace technique. As(III) can be extracted quantitatively by APDC-CCl 4 system at pH = 1-3. As(V) can be extracted after being reduced to As(III) by Na 2 S 2 O 3 . Water with high pH value can be used for back-extraction. The method can be applied in the separation of inorganic As(III) and As(V) in water quality inspection

New group III precursors for the MOVPE of GaAs and InP based material

International Nuclear Information System (INIS)

Hostaler, M.; Pohl, L.; Brauers, A.; Balk, P.; Frese, V.; Hovel, R.; Regel, G.K.; Hardtdegen, H.

1989-01-01

This paper presents proposals for the synthesis of several group III metal organics (In, Ga, Al compounds) and preliminary results on their use in the MOVPE (metal organic vapor phase epitaxy) of III-V semiconductors. The common feature of all these precursors is that they are saturated by inter- or intramolecular coordination. They are even non-pyrophoric and air resistant which is an interesting aspect with respect to safe handling. In addition, the compounds are liquid at room temperature with a low but sufficient vapor pressure for MOVPE without additional heating of the source

Titanium nitride as an electrocatalyst for V(II)/V(III) redox couples in all-vanadium redox flow batteries

International Nuclear Information System (INIS)

Yang, Chunmei; Wang, Haining; Lu, Shanfu; Wu, Chunxiao; Liu, Yiyang; Tan, Qinglong; Liang, Dawei; Xiang, Yan

2015-01-01

Titanium nitride nanoparticles (TiN NPs) are proposed as a novel catalyst towards the V(II)/V(III) redox pair for the negative electrode in vanadium redox flow batteries (VRFB). Electrochemical properties of TiN NPs were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The results show that TiN NPs demonstrate better electrochemical activity and reversibility for the processes of V(II)/V(III) redox couples as compared with the graphite NPs. TiN NPs facilitate the charge transfer in the V(II)/V(III) redox reaction. Performance of a VRFB using a TiN NPs coated carbon paper as a negative electrode is much higher than that of a VRFB with a raw carbon paper electrode. The columbic efficiency (CE), the voltage efficiency (VE) and the energy efficiency (EE) of the VRFB single cell at charge-discharge current density of 30 mA/cm 2 are 91.74%, 89.11% and 81.74%, respectively. During a 50 charge-discharge cycles test, the CE values of VRFB with TiN NPs consistently remain higher than 90%.

Thorium coprecipitation method for spectrophotometric determination of arsenic (III) and arsenic (V) in groundwaters

International Nuclear Information System (INIS)

Tamari, Yuzo; Yamamoto, Nobuki; Tsuji, Haruo; Kusaka, Yuzuru

1989-01-01

A new coprecipitation method for the spectrophotometry of arsenic (III) and arsenic (V) in groundwater has been developed. Arsenic (III) and arsenic (V) were coprecipitated with thorium (IV) hydroxide from 1000ml of groundwater at pH9. The precipitate was centrifuged and then dissolved with hydrochloric acid. Arsenic (III) was spectrophotometrically determined by the usual silver diethylditiocarbamate (Ag-DDTC) method after generating the arsenic to arsine with sodium tetrahydroborate under masking the thorium with EDTA-NaF at pH6. From another portion of the same groundwater, both arsenic (III) and arsenic (V) were determined by the Ag-DDTC method after reducing all the arsenic to arsine with sodium tetrahydroborate at pH less than 1 in the presence of the EDTA-NaF. The concentration of arsenic (V) was obtained by subtracting that of arsenic (III) from the total for arsenic. (author)

Nitrato-complexes of Y(III), La(III), Ce(III), Pr(III), Nd(III), Sm(III), Gd(III), Tb(III), Dy(III) and Ho(III) with 2-(2'-pyridyl) benzimidazole

Energy Technology Data Exchange (ETDEWEB)

Mishra, A; Singh, M P; Singh, V K

1982-05-01

The nitrato-complexes, (Y(PyBzH)/sub 2/(NO/sub 3/)/sub 2/)NO/sub 3/.H/sub 2/O and Nd, Sm, Gd, Tb, Dy, Ho ; n=1-3, m=0-0.5 ; PyBzh=2-(2 -pyridyl)benzimidazole) are formed on interaction of the ligand with metal nitrates in ethanol. The electrical conductance values (116-129 ohm/sup -1/cm/sup 2/mol/sup -1/) suggest 1:1 electrolyte-nature of the complexes. Magnetic moment values of Ce(2.53 B.M.), Pr(3.62 B.M.), Nd(3.52 B.M.), Sm(1.70 B.M.), Gd(8.06 B.M.), Tb(9.44 B.M.), Dy(10.56 B.M.) and Ho(10.51 B.M.) in the complexes confirm the positive state of the metals. Infrared evidences are obtained for the existance of both coordinated (C/sub 2/v) and uncoordinated (D/sub 3/h) nitrate groups. Electronic absorption spectra of Pr(III)-, Nd(III)-, Sm(III)-, Tb(III)-, Dy(III)- and Ho(III)-complexes have been analysed in the light of LSJ terms.

Nitrato-complexes of Y(III), La(III), Ce(III), Pr(III), Nd(III), Sm(III), Gd(III), Tb(III), Dy(III) and Ho(III) with 2-(2'-pyridyl) benzimidazole

International Nuclear Information System (INIS)

Mishra, A.; Singh, M.P.; Singh, V.K.

1982-01-01

The nitrato-complexes, [Y(PyBzH) 2 (NO 3 ) 2 ]NO 3 .H 2 O and Nd, Sm, Gd, Tb, Dy, Ho ; n=1-3, m=0-0.5 ; PyBzh=2-(2 -pyridyl)benzimidazole] are formed on interaction of the ligand with metal nitrates in ethanol. The electrical conductance values (116-129 ohm -1 cm 2 mol -1 ) suggest 1:1 electrolyte-nature of the complexes. Magnetic moment values of Ce(2.53 B.M.), Pr(3.62 B.M.), Nd(3.52 B.M.), Sm(1.70 B.M.), Gd(8.06 B.M.), Tb(9.44 B.M.), Dy(10.56 B.M.) and Ho(10.51 B.M.) in the complexes confirm the terpositive state of the metals. Infrared evidences are obtained for the existance of both coordinated (C 2 v) and uncoordinated (D 3 h) nitrate groups. Electronic absorption spectra of Pr(III)-, Nd(III)-, Sm(III)-, Tb(III)-, Dy(III)- and Ho(III)-complexes have been analysed in the light of LSJ terms. (author)

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Long-wavelength III-V/silicon photonic integrated circuits

NARCIS (Netherlands)

Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

2013-01-01

We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

Methods for improved growth of group III nitride buffer layers

Science.gov (United States)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on the... mines, provided with an automatic signal device to give an alarm when the fan stops. The signal device...

Cr-doped III-V nitrides: Potential candidates for spintronics

KAUST Repository

Amin, Bin

2011-02-19

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

Cr-doped III-V nitrides: Potential candidates for spintronics

KAUST Repository

Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

2011-01-01

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

Early-maturing soybean cropping system. III. Protein and oil contents and oil composition

International Nuclear Information System (INIS)

Kane, M.V.; Steele, C.C.; Grabau, L.J.; MacKown, C.T.; Hildebrand, D.F.

1997-01-01

Expanding production of early-maturing soybean [Glycine max (L.) Merrill] cultivars in the southeastern USA has exposed such cultivars to a wide range of environmental conditions during seed-fill. Temperatures during this growth stage influence levels of specific fatty acids, particularly of the unsaturated fatty acids. Our objective was to evaluate the grain quality responses of early-maturing cultivars to the wide range of planting dates in the southeastern USA. Protein and oil contents along with fatty acid profiles were assessed for cultivars from Maturity Group (MG) 00 through IV using late April mid-May early June, and late June planting dates on a well-drained Maury silt loam (fine, mixed, mesic Typic Paleudalf) in 1990 through 1993. Across years and cultivars. delayed planting increased protein content and linolenic acid levels and reduced oil content and oleic acid levels but had little or no influence on palmitic stearic or linoleic acid levels. The higher seed-fill temperatures associated with early planting were strongly correlated with increased oil content and oleic acid levels and reduced linolenic acid levels. Increasing seed-fill temperatures were closely associated with reduced linolenic acid levels for all six cultivars. However, the oleic acid response to seed-temperatures strongly depended on cultivar maturity. Oleic acid levels of early-maturing cultivars were much more sensitive to seed-fill temperatures than were those of later maturing cultivars. While other effects of environment on grain quality characteristics may be relatively small perhaps the quality of new low linolenic acid cultivars could be amplified through culture under the warmer conditions the southeastern USA

New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

International Nuclear Information System (INIS)

Yu, Na

2015-01-01

The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo-phosphate(V

Vitrification affects nuclear maturation and gene expression of immature human oocytes

Directory of Open Access Journals (Sweden)

Abbas Shahedi

2017-02-01

Full Text Available Background: Vitrification of oocytes is a fast-freezing technique, which may affect the quality of the human oocyte, and consequently affects the embryo development, pregnancy and birth. The aim of the current study was to investigate the consequence of in-vitro vitrification on maturation status of immature human oocytes, additionally, expression levels of stress, and apoptosis related genes. Materials and Methods: The total of 213 human immature oocytes which routinely discarded from assisted reproduction clinics were collected and divided into two groups including: (I fresh germinal vesicle (GV oocytes (n=106 (matured in-vitro  (fIVM , and  (II GV oocytes (n=107 that initially vitrified, then matured in  in-vitro (vIVM. After 36 hours of incubation, the oocytes were evaluated for nuclear maturation and expression level of DNA methyltransferase (DNMT1, stress related genes (Sod1 and Hsp70, and apoptotic related genes (Bax and Bcl-2 by quantitative Real-Time PCR. Results: Oocyte maturation rates were reduced in vIVM compared to fIVM oocytes (P=0.001. The expression of stress (Sod1 and Hsp70, and apoptotic-related genes (Bax and Bcl-2 in vIVM were significantly higher compared to the fIVM group. Additionally, pro-apoptotic gene up-regulated 4.3 times more than anti-apoptotic gene in vIVM oocyte. However, DNMT1 gene expression was reduced in vIVM oocyte (P = 0.047. Conclusions: The low survival rate of vitrified In-vitro matured GV oocytes could definitely be explained by the alterations of their gene expression profile. 

Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

Science.gov (United States)

Qi, Pengfei; Pichler, Thomas

2016-02-01

Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

DEFF Research Database (Denmark)

Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

2010-01-01

Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

Characterization of ribonuclease III from Brucella.

Science.gov (United States)

Wu, Chang-Xian; Xu, Xian-Jin; Zheng, Ke; Liu, Fang; Yang, Xu-Dong; Chen, Chuang-Fu; Chen, Huan-Chun; Liu, Zheng-Fei

2016-04-01

Bacterial ribonuclease III (RNase III) is a highly conserved endonuclease, which plays pivotal roles in RNA maturation and decay pathways by cleaving double-stranded structure of RNAs. Here we cloned rncS gene from the genomic DNA of Brucella melitensis, and analyzed the cleavage properties of RNase III from Brucella. We identified Brucella-encoding small RNA (sRNA) by high-throughput sequencing and northern blot, and found that sRNA of Brucella and Homo miRNA precursor (pre-miRNA) can be bound and cleaved by B.melitensis ribonuclease III (Bm-RNase III). Cleavage activity of Bm-RNase III is bivalent metal cations- and alkaline buffer-dependent. We constructed several point mutations in Bm-RNase III, whose cleavage activity indicated that the 133th Glutamic acid residue was required for catalytic activity. Western blot revealed that Bm-RNase III was differently expressed in Brucella virulence strain 027 and vaccine strain M5-90. Collectively, our data suggest that Brucella RNase III can efficiently bind and cleave stem-loop structure of small RNA, and might participate in regulation of virulence in Brucella. Copyright © 2016 Elsevier B.V. All rights reserved.

Radiographic assessment of skeletal maturation stages for orthodontic patients: hand-wrist bones or cervical vertebrae?

Science.gov (United States)

Lai, Eddie Hsiang-Hua; Liu, Jen-Pei; Chang, Jenny Zwei-Chieng; Tsai, Shih-Jaw; Yao, Chung-Chen Jane; Chen, Mu-Hsiung; Chen, Yi-Jane; Lin, Chun-Pin

2008-04-01

The skeletal maturation status of a growing patient can influence the selection of orthodontic treatment procedures. Either lateral cephalometric or hand-wrist radiography can be used to assess skeletal development. In this study, we examined the correlation between the maturation stages of cervical vertebrae and hand-wrist bones in Taiwanese individuals. The study group consisted of 330 male and 379 female subjects ranging in age from 8 to 18 years. A total of 709 hand-wrist and 709 lateral cephalometric radiographs were analyzed. Hand-wrist maturation stages were assessed using National Taiwan University Hospital Skeletal Maturation Index (NTUH-SMI). Cervical vertebral maturation stages were determined by the latest Cervical Vertebral Maturation Stage (CVMS) Index. Spearman's rank correlation was used to correlate the respective maturation stages assessed from the hand-wrist bones and the cervical vertebrae. The values of Spearman's rank correlation were 0.910 for males and 0.937 for females, respectively. These data confirmed a strong and significant correlation between CVMS and NTUH-SMI systems (p less than 0.001). After comparison of the mean ages of subjects in different stages of CVMS and NTU-SMI systems, we found that CVMS I corresponded to NTUH-SMI stages 1 and 2, CVMS II to NTUH-SMI stage 3, CVMS III to NTUHSMI stage 4, CVMS IV to NTUH-SMI stage 5, CVMS V to NTUH-SMI stages 6, 7 and 8, and CVMS VI to NTUH-SMI stage 9. Our results indicate that cervical vertebral maturation stages can be used to replace hand-wrist bone maturation stages for evaluation of skeletal maturity in Taiwanese individuals.

Prospective trial of angiography and embolization for all grade III to V blunt splenic injuries: nonoperative management success rate is significantly improved.

Science.gov (United States)

Miller, Preston R; Chang, Michael C; Hoth, J Jason; Mowery, Nathan T; Hildreth, Amy N; Martin, R Shayn; Holmes, James H; Meredith, J Wayne; Requarth, Jay A

2014-04-01

Nonoperative management (NOM) of blunt splenic injury is well accepted. Substantial failure rates in higher injury grades remain common, with one large study reporting rates of 19.6%, 33.3%, and 75% for grades III, IV, and V, respectively. Retrospective data show angiography and embolization can increase salvage rates in these severe injuries. We developed a protocol requiring referral of all blunt splenic injuries, grades III to V, without indication for immediate operation for angiography and embolization. We hypothesized that angiography and embolization of high-grade blunt splenic injury would reduce NOM failure rates in this population. This was a prospective study at our Level I trauma center as part of a performance-improvement project. Demographics, injury characteristics, and outcomes were compared with historic controls. The protocol required all stable patients with grade III to V splenic injuries be referred for angiography and embolization. In historic controls, referral was based on surgeon preference. From January 1, 2010 to December 31, 2012, there were 168 patients with grades III to V spleen injuries admitted; NOM was undertaken in 113 (67%) patients. The protocol was followed in 97 patients, with a failure rate of 5%. Failure rate in the 16 protocol deviations was 25% (p = 0.02). Historic controls from January 1, 2007 to December 31, 2009 were compared with the protocol group. One hundred and fifty-three patients with grade III to V injuries were admitted during this period, 80 (52%) patients underwent attempted NOM. Failure rate was significantly higher than for the protocol group (15%, p = 0.04). Use of a protocol requiring angiography and embolization for all high-grade spleen injuries slated for NOM leads to a significantly decreased failure rate. We recommend angiography and embolization as an adjunct to NOM for all grade III to V splenic injuries. Copyright © 2014 American College of Surgeons. Published by Elsevier Inc. All rights reserved.

Hexagonal perovskites with cationic vacancies. 16. Rhombohedral 12 L-stacking polytypes Ba/sub 3/Asup(III)M/sub 3/sup(V)vacantO/sub 12/ with Msup(V) = Nb, Ta

Energy Technology Data Exchange (ETDEWEB)

Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

1980-02-01

The white quaternary oxides Ba/sub 3/LaM/sub 3/sup(V)vacantO/sub 12/ with Msup(V) = Nb, Ta belong to the group of hexagonal perovskites with cationic vacancies. They crystallize in a rhombohedral 12 L-structure (sequence (hhcc)/sub 3/; space group R3m) with a = 5.75 A; c = 28.1 A (Msup(V) = Nb); a = 5.74 A; c = 28.2 A (Ta) and Z = 3. Signs for the formation of isotypic compounds with Asup(III) = Pr, Nd could be obtained as well.

III-V nanoelectronics and related surface/interface issues

International Nuclear Information System (INIS)

Hasegawa, Hideki

2003-01-01

The conventional logic gate architecture is not suitable for high-density integration of quantum devices which are non-robust and extremely structure- and charge-sensitive. In this paper, our novel hexagonal binary-decision-diagram (BDD) quantum circuit approach for III-V nanoelectronics is reviewed and related critical surface/interface issues for high-density integration are discussed. First, the basic concept and actual implementation method of our approach are explained, giving examples of novel BDD quantum integrated circuits where nanowire networks are controlled by nanoscale Schottky wrap gates. For high-density integration, growth of embedded sub-10 nm III-V quantum wire networks by selective molecular beam epitaxy (MBE) on patterned substrates is described, including effects of atomic hydrogen irradiation and kinetic control of wire width. The key processing issue lies in understanding and control of nanostructure surfaces/interfaces. Behavior of nanoscale Schottky gates, recent scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) studies of surface states, and successful removal of surface states by MBE-grown silicon interface control layer are discussed

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

Science.gov (United States)

Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

2017-05-01

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Investigation of Clostridium botulinum group III's mobilome content

NARCIS (Netherlands)

Woudstra, Cédric; Maréchal, Le Caroline; Souillard, Rozenn; Anniballi, Fabrizio; Auricchio, Bruna; Bano, Luca; Bayon-Auboyer, Marie Hélène; Koene, Miriam; Mermoud, Isabelle; Brito, Roseane B.; Lobato, Francisco C.F.; Silva, Rodrigo O.S.; Dorner, Martin B.; Fach, Patrick

2018-01-01

Clostridium botulinum group III is mainly responsible for botulism in animals. It could lead to high animal mortality rates and, therefore, represents a major environmental and economic concern. Strains of this group harbor the botulinum toxin locus on an unstable bacteriophage. Since the release of

Treatment of As(V) and As(III) by electrocoagulation using Al and Fe electrode.

Science.gov (United States)

Kuan, W H; Hu, C Y; Chiang, M C

2009-01-01

A batch electrocoagulation (EC) process with bipolar electrode and potentiodynamic polarization tests with monopolar systems were investigated as methods to explore the effects of electrode materials and initial solution pH on the As(V) and As(III) removal. The results displayed that the system with Al electrode has higher reaction rate during the initial period from 0 to 25 minutes than that of Fe electrode for alkaline condition. The pH increased with the EC time because the As(V) and As(III) removal by either co-precipitation or adsorption resulted in that the OH positions in Al-hydroxide or Fe-hydroxide were substituted by As(V) and As(III). The pH in Fe electrode system elevate higher than that in Al electrode because the As(V) removal substitutes more OH position in Fe-hydroxide than that in Al-hydroxide. EC system with Fe electrode can successfully remove the As(III) but system with Al electrode cannot because As(III) can strongly bind to the surface of Fe-hydroxide with forming inner-sphere species but weakly adsorb to the Al-hydroxide surface with forming outer-sphere species. The acidic solution can destroy the deposited hydroxide passive film then allow the metallic ions liberate into the solution, therefore, the acidic initial solution can enhance the As(V) and As(III) removal. The over potential calculation and potentiodynamic polarization tests reveal that the Fe electrode systems possess higher over potential and pitting potential than that of Al electrode system due to the fast hydrolysis of and the occurrence of Fe-hydroxide passive film.

Adsorption Characteristics of Different Adsorbents and Iron(III Salt for Removing As(V from Water

Directory of Open Access Journals (Sweden)

Josip Ćurko

2016-01-01

Full Text Available The aim of this study is to determine the adsorption performance of three types of adsorbents for removal of As(V from water: Bayoxide® E33 (granular iron(III oxide, Titansorb® (granular titanium oxide and a suspension of precipitated iron(III hydroxide. Results of As(V adsorption stoichiometry of two commercial adsorbents and precipitated iron(III hydroxide in tap and demineralized water were fitted to Freundlich and Langmuir adsorption isotherm equations, from which adsorption constants and adsorption capacity were calculated. The separation factor RL for the three adsorbents ranged from 0.04 to 0.61, indicating effective adsorption. Precipitated iron(III hydroxide had the greatest, while Titansorb had the lowest capacity to adsorb As(V. Comparison of adsorption from tap or demineralized water showed that Bayoxide and precipitated iron(III hydroxide had higher adsorption capacity in demineralized water, whereas Titansorb showed a slightly higher capacity in tap water. These results provide mechanistic insights into how commonly used adsorbents remove As(V from water.

Gender and gonadal maturity stage identification of captive Chinese sturgeon, Acipenser sinensis, using ultrasound imagery and sex steroids.

Science.gov (United States)

Du, Hao; Zhang, Xiaoyan; Leng, Xiaoqian; Zhang, Shuhuan; Luo, Jiang; Liu, Zhigang; Qiao, Xingmei; Kynard, Boyd; Wei, Qiwei

2017-05-01

Long lifespan and late maturation make it difficult to establish gamete maturity and breeding age of captive endangered Chinese sturgeon, Acipenser sinensis. This greatly handicaps timely breeding and future conservation stocking efforts. We used ultrasound imagery and sex steroids to determine the gender and gonadal maturity stage of captive Chinese sturgeon (age, 10-17years old). The echogenicity of the reproductive organs and the respective morphology of the gonads were described and two quantitative parameters p o (proportion of the ovary to the entire reproductive organs) and d (thickness of the reproductive organs) were measured to characterize sex and maturity stage of Chinese sturgeon. Females were accordingly placed fish into several categories: F II (F II - , F II , F II + ), F III (F III , F III + ) and F IV (F IV , F IV + ) and F VI and males as M II , M III , M IV , M V and M VI . The accuracy of gender and maturity stage determination provided by ultrasonographic methods was 72.7% for F II - ovary (n=11) and 76.2% for M II testis (n=42). Accuracy of sex and maturity determination using only serum sex steroid of testosterone (T) and estradiol-17β (E 2 ) was low (58-73%, depending on maturity stage). However, when the two methods were used together, accuracy increased sharply, especially for immature (II stage) females. In summary, of 151 Chinese sturgeon, whose sex and maturity stage were independently confirmed, 88.1% (n=133), 62.9% (n=95), and 96.7% (n=146) were successfully sexed and staged using ultrasound, sex steroids, or both methods, respectively. The results provide reliable non-invasive techniques for determining sex and gonadal maturation of captive Chinese sturgeon. These methods can track individual gonad characteristics over multi-year reproductive cycles, which will assist captive broodstock management, artificial reproduction, and future conservation stocking. Copyright © 2016 Elsevier Inc. All rights reserved.

Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

International Nuclear Information System (INIS)

Leisner, Malte; Carstensen, Juergen; Foell, Helmut

2011-01-01

The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

Structure and spectroscopic study of aqueous Fe(III)-As(V) complexes using UV-Vis, XAS and DFT-TDDFT.

Science.gov (United States)

Chai, Liyuan; Yang, Jinqin; Zhang, Ning; Wu, Pin-Jiun; Li, Qingzhu; Wang, Qingwei; Liu, Hui; Yi, Haibo

2017-09-01

Aqueous complexes between ferric (Fe(III)) and arsenate (As(V)) are indispensable for understanding the mobility of arsenic (As) in Fe(III)-As(V)-rich systems. In this study, aqueous Fe(III)-As(V) complexes, FeH 2 AsO 4 2+ and FeHAsO 4 + , were postulated based on the qualitative analysis of UV-Vis spectra in both Fe(III)-As(V)-HClO 4 and Fe(III)-As(V)-H 2 SO 4 systems. Subsequently, monodentate structures were evidenced by Fe K-edge EXAFS and modeled as [FeH 2 AsO 4 (H 2 O) 5 ] 2+ and [FeHAsO 4 (H 2 O) 5 ] + by DFT. The feature band at ∼280 nm was verified as electron excitation chiefly from Fe-As-bridged O atoms to d-orbital of Fe in [FeH 2 AsO 4 (H 2 O) 5 ] 2+ and [FeHAsO 4 (H 2 O) 5 ] + . The structural and spectral information of Fe(III)-As(V) complexes will enable future speciation analysis in Fe(III)-As(V)-rich system. Copyright © 2017. Published by Elsevier Ltd.

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Directory of Open Access Journals (Sweden)

Kan Li

2016-06-01

Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Theory of ferromagnetic (III,Mn)V semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Mašek, Jan; Kučera, Jan; MacDonald, A. H.

2006-01-01

Roč. 78, - (2006), s. 809-859 ISSN 0034-6861 R&D Projects: GA MŠk LC510; GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; U.S. Department of Energy(US) DE-FG03-02ER45958; U.S. Office of Naval research(US) OMR-N000140610122 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * (III,Mn)V compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.508, year: 2006

Radiation Effects in III-V Nanowire Devices

Science.gov (United States)

2016-09-01

fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field- effect transistor (MOSFET) by focused -ion beam (FIB) etching and chemical...8725 John J. Kingman Road, MS 6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-16-94 Radiation Effects in III-V...5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING / MONITORING AGENCY

Cloud point extraction of iron(III) and vanadium(V) using 8-quinolinol derivatives and Triton X-100 and determination of 10(-7)moldm(-3) level iron(III) in riverine water reference by a graphite furnace atomic absorption spectroscopy.

Science.gov (United States)

Ohashi, Akira; Ito, Hiromi; Kanai, Chikako; Imura, Hisanori; Ohashi, Kousaburo

2005-01-30

The cloud point extraction behavior of iron(III) and vanadium(V) using 8-quinolinol derivatives (HA) such as 8-quinolinol (HQ), 2-methyl-8-quinolinol (HMQ), 5-butyloxymethyl-8-quinolinol (HO(4)Q), 5-hexyloxymethyl-8-quinolinol (HO(6)Q), and 2-methyl-5-octyloxymethyl-8-quinolinol (HMO(8)Q) and Triton X-100 solution was investigated. Iron(III) was extracted with HA and 4% (v/v) Triton X-100 in the pH range of 1.70-5.44. Above pH 4.0, more than 95% of iron(III) was extracted with HQ, HMQ, and HMO(8)Q. Vanadium(V) was also extracted with HA and 4% (v/v) Triton X-100 in the pH range of 2.07-5.00, and the extractability increased in the following order of HMQ HQ cloud point extraction was applied to the determination of iron(III) in the riverine water reference by a graphite furnace atomic absorption spectroscopy. When 1.25 x 10(-3)M HMQ and 1% (v/v) Triton X-100 were used, the found values showed a good agreement with the certified ones within the 2% of the R.S.D. Moreover, the effect of an alkyl group on the solubility of 5-alkyloxymethyl-8-quinolinol and 2-methyl-5-alkyloxymethyl-8-quinolinol in 4% (v/v) Triton X-100 at 25 degrees C was also investigated.

Adsorção de arsênio(V pela quitosana ferro - III reticulada Asorption of arsenic (V by crosslinked iron-III-chitosan

Directory of Open Access Journals (Sweden)

Tathyane Fagundes

2008-01-01

Full Text Available The removal of As(V by a crosslinked iron(III-chitosan adsorbent was evaluated under various conditions. The adsorption capacity of CH-FeCL was around 54 mg/g of As(V. The kinetics of adsorption obeys a pseudo-first-order model with rate constants equal to 0.022, 0.028, and 0.033 min-1 at 15, 25 and 35 ºC respectively. Adsorption data were well described by the Langmuir model, although they could be modeled also by the Langmuir-Freundlich equation. The maximum adsorption capacity, calculated with the Langmuir model, was 127 mg g-1 of As(V. The inhibition by competing anions is dependant on their kind and valence.

New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

Energy Technology Data Exchange (ETDEWEB)

Yu, Na

2015-12-11

The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo-phosphate(V

Concomitant glenohumeral pathologies in high-grade acromioclavicular separation (type III - V).

Science.gov (United States)

Markel, Jochen; Schwarting, Tim; Malcherczyk, Dominik; Peterlein, Christian-Dominik; Ruchholtz, Steffen; El-Zayat, Bilal Farouk

2017-11-10

Acromioclavicular joint (ACJ) dislocations are common injuries of the shoulder associated with physical activity. The diagnosis of concomitant injuries proves complicated due to the prominent clinical symptoms of acute ACJ dislocation. Because of increasing use of minimally invasive surgery techniques concomitant pathologies are diagnosed more often than with previous procedures. The aim of this study was to identify the incidence of concomitant intraarticular injuries in patients with high-grade acromioclavicular separation (Rockwood type III - V) as well as to reveal potential risk constellations. The concomitant pathologies were compiled during routine arthroscopically assisted treatment in altogether 163 patients (147 male; 16 female; mean age 36.8 years) with high-grade acromioclavicular separation (Rockwood type III: n = 60; Rockwood type IV: n = 6; Rockwood type V: n = 97). Acromioclavicular separation occurred less often in women than men (1:9). In patients under 35, the most common cause for ACJ dislocation was sporting activity (37.4%). Rockwood type V was observed significantly more often than the other types with 57.5% (Rockwood type III = 36.8%, Rockwood type IV 3.7%). Concomitant pathologies were diagnosed in 39.3% of the patients with that number rising to as much as 57.3% in patients above 35 years. Most common associated injuries were rotator cuff injuries (32.3%), chondral defects (30.6%) and SLAP-lesions (22.6%). Of all patients, 8.6% needed additional reconstructive surgery. Glenohumeral injuries are a much more common epiphenomenon during acromioclavicular separation than previously ascertained. High risk group for accompanying injuries are patients above 35 years with preexisting degenerative disease. The increasing use of minimally invasive techniques allows for an easier diagnosis and simultaneous treatment of the additional pathologies.

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

Science.gov (United States)

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

The maturational process of the auditory system in the first year of life characterized by brainstem auditory evoked potentials

Directory of Open Access Journals (Sweden)

Raquel Beltrão Amorim

2009-01-01

Full Text Available The study of brainstem auditory evoked potentials (BAEP allows obtaining the electrophysiological activity generated in the cochlear nerve to the inferior colliculus. In the first months of life, a period of greater neuronal plasticity, important changes are observed in the absolute latency and inter-peak intervals of BAEP, which occur up to the completion of the maturational process, around 18 months of life in full-term newborns, when the response is similar to that of adults. OBJECTIVE: The goal of this study was to establish normal values of absolute latencies for waves I, III and V and inter-peak intervals I-III, III-V and I-V of the BAEP performed in full-term infants attending the Infant Hearing Health Program of the Speech-Language Pathology and Audiology Course at Bauru School of Dentistry, Brazil, with no risk history for hearing impairment. MATERIAL AND METHODS: The stimulation parameters were: rarefaction click stimulus presented by the 3ª insertion phone, intensity of 80 dBnHL and a rate of 21.1 c/s, band-pass filter of 30 and 3,000 Hz and average of 2,000 stimuli. A sample of 86 infants was first divided according to their gestational age in preterm (n=12 and full-term (n=74, and then according to their chronological age in three periods: P1: 0 to 29 days (n=46, P2: 30 days to 5 months 29 days (n=28 and P3: above 6 months (n= 12. RESULTS: The absolute latency of wave I was similar to that of adults, generally in the 1st month of life, demonstrating a complete process maturity of the auditory nerve. For waves III and V, there was a gradual decrease of absolute latencies with age, characterizing the maturation of axons and synaptic mechanisms in the brainstem level. CONCLUSION: Age proved to be a determining factor in the absolute latency of the BAEP components, especially those generated in the brainstem, in the first year of life.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

STABILITY: AN INVESTIGATION OF AS(III)/AS(V) STABILITY IN IRON RICH DRINKING WATER MATRICES

Science.gov (United States)

Arsenic in drinking water is predominantly inorganic arsenic. The two oxidation states of inorganic arsenic are As(III)(pKa=9.3) and As(V)(pKa2=6.9). The distribution of As(III) and AS(V) in a water is dependent on the redox potential of the water. The actual distribution can ...

Streptococcus agalactiae isolates of serotypes Ia, III and V from human and cow are able to infect tilapia.

Science.gov (United States)

Chen, Ming; Wang, Rui; Luo, Fu-Guang; Huang, Yan; Liang, Wan-Wen; Huang, Ting; Lei, Ai-Ying; Gan, Xi; Li, Li-Ping

2015-10-22

Recent studies have shown that group B streptococcus (GBS) may be infectious across hosts. The purpose of this study is to investigate the pathogenicity of clinical GBS isolates with serotypes Ia, III and V from human and cow to tilapia and the evolutionary relationship among these GBS strains of different sources. A total of 27 clinical GBS isolates from human (n=10), cow (n=2) and tilapia (n=15) were analyzed using serotyping, multi-locus sequence typing (MLST) and pulsed-field gel electrophoresis (PFGE). Among them, 15 isolates were tested for their pathogenicity to tilapia. The results showed that five human GBS strains (2 serotype III, 2 serotype Ia and 1 serotype V) infected tilapia with mortality rate ranging from 56.67% to 100%, while the other five human GBS strains tested were unable to infect tilapia. In addition, two cow GBS strains C001 and C003 of serotype III infected tilapia. However, they had significantly lower pathogenicity than the five human strains. Furthermore, human GBS strains H005 and H008, which had very strong ability to infect tilapia, had the same PFGE pattern. MLST analysis showed that the five human and the two cow GBS strains that were able to infect tilapia belonged to clonal complexes CC19, CC23 and CC103. The study for the first time confirmed that human or cow GBS clonal complexes CC19, CC23 and CC103 containing strains with serotypes Ia, III and V could infect tilapia and induce clinical signs under experimental conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

Corynebacterium glutamicum MTCC 2745 immobilized on granular activated carbon/MnFe2O4 composite: A novel biosorbent for removal of As(III) and As(V) ions.

Science.gov (United States)

Podder, M S; Majumder, C B

2016-11-05

The optimization of biosorption/bioaccumulation process of both As(III) and As(V) has been investigated by using the biosorbent; biofilm of Corynebacterium glutamicum MTCC 2745 supported on granular activated carbon/MnFe2O4 composite (MGAC). The presence of functional groups on the cell wall surface of the biomass that may interact with the metal ions was proved by FT-IR. To determine the most appropriate correlation for the equilibrium curves employing the procedure of the non-linear regression for curve fitting analysis, isotherm studies were performed for As(III) and As(V) using 30 isotherm models. The pattern of biosorption/bioaccumulation fitted well with Vieth-Sladek isotherm model for As(III) and Brouers-Sotolongo and Fritz-Schlunder-V isotherm models for As(V). The maximum biosorption/bioaccumulation capacity estimated using Langmuir model were 2584.668mg/g for As(III) and 2651.675mg/g for As(V) at 30°C temperature and 220min contact time. The results showed that As(III) and As(V) removal was strongly pH-dependent with an optimum pH value of 7.0. D-R isotherm studies specified that ion exchange might play a prominent role. Copyright © 2016 Elsevier B.V. All rights reserved.

30 CFR 57.22208 - Auxiliary fans (I-A, II-A, III, and V-A mines).

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Auxiliary fans (I-A, II-A, III, and V-A mines... fans (I-A, II-A, III, and V-A mines). (a) Auxiliary fans, except fans used in shops and other areas... applicable requirements of 30 CFR part 18, and be operated so that recirculation is minimized. Auxiliary fans...

Correlation of maturity groups with seed composition in soybeans, as influenced by genotypic variation.

Directory of Open Access Journals (Sweden)

Maestri, Damián M.

1998-12-01

Full Text Available Seeds of 19 soybean cultivars (Glycine max (L. Merrill with maturity groups V, VI or VII were analyzed for proximate composition, fatty acids and sterols. Protein, oil, carbohydrate and ash contents varied between 344-463 g kg^-1, 178-233 g kg^-1, 234-338 g kg^-1, and 40.0-49.3 g kg^-1 of dry matter, respectively. Fatty acid profiles revealed that the major acids were palmitic (9.2-12.5%, oleic (17.7-22.1% and linoleic (53.6-56.9%. Linolenic acid ranged from 8.6 to 10.4%. Sitosterol (48.1-56.8% was the main component of the sterol fraction, followed by campesterol (18.4-21.7% and stigmasterol (13.4-18.0%. Statistically significant differences between genotypes were found for the majority of parameters evaluated, but there are not significant variations among maturity groups.

Se analizaron la humedad, contenido en proteínas, carbohidratos, grasas y cenizas, y las composiciones en ácidos grasos y esteróles de las semillas de 19 cultivares de soja (Glycine max (L. Merrill con grupos de madurez V, VI o VIl. Los contenidos de proteínas, aceites, carbohidratos y cenizas variaron entre 344-463 g kg^-1, 178-233 g kg^-1, 234-338 g kg^-1 y 40.0-49.3 g kg^-1 de materia seca, respectivamente. Los ácidos grasos mayoritarios fueron palmítico (9.2-12.5%, oleico (17.7-22.1% y linoleico (53.6-56.9%. El porcentaje de ácido linolénico varió desde 8.6 hasta 10.4%. El principal componente de la fracción de esteroles del aceite fue el sitosterol (48.1-56.8%, seguido por el campesterol (18.4-21.7% y el estigmasterol (13.4-18.0%. Se encontraron diferencias estadísticamente significativas entre los genotipos para la mayoría de los parámetros evaluados, pero no hubo variaciones significativas entre grupos de madurez.

Growth of Ag-seeded III-V Nanowires and TEM Characterization

DEFF Research Database (Denmark)

Lindberg, Anna Helmi Caroline

appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

International Nuclear Information System (INIS)

Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

1999-01-01

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

Intensity of adjuvant chemotherapy regimens and grade III-V toxicities among elderly stage III colon cancer patients.

Science.gov (United States)

van Erning, F N; Razenberg, L G E M; Lemmens, V E P P; Creemers, G J; Pruijt, J F M; Maas, H A A M; Janssen-Heijnen, M L G

2016-07-01

The aim of this study was to provide insight in the use, intensity and toxicity of therapy with capecitabine and oxaliplatin (CAPOX) and capecitabine monotherapy (CapMono) among elderly stage III colon cancer patients treated in everyday clinical practice. Data from the Netherlands Cancer Registry were used. All stage III colon cancer patients aged ≥70 years diagnosed in the southeastern part between 2005 and 2012 and treated with CAPOX or CapMono were included. Differences in completion of all planned cycles, cumulative dosages and toxicity between both regimens were evaluated. One hundred ninety-three patients received CAPOX and 164 patients received CapMono; 33% (n = 63) of the patients receiving CAPOX completed all planned cycles of both agents, whereas 55% (n = 90) of the patients receiving CapMono completed all planned cycles (P characteristics, CapMono was associated with a lower odds of developing grade III-V toxicity than CAPOX (odds ratio 0.54, 95% confidence interval 0.33-0.89). For patients treated with CAPOX, the most common toxicities were gastrointestinal (29%), haematological (14%), neurological (11%) and other toxicity (13%). For patients treated with CapMono, dermatological (17%), gastrointestinal (13%) and other toxicity (11%) were the most common. CAPOX is associated with significantly more grade III-V toxicities than CapMono, which had a pronounced impact on the cumulative dosage received and completion of all planned cycles. In this light, CapMono seems preferable over CAPOX. Copyright © 2016 Elsevier Ltd. All rights reserved.

Determination of As(III) and As(V) by Flow Injection-Hydride Generation-Atomic Absorption Spectrometry via On-line Reduction of As(V) by KI

DEFF Research Database (Denmark)

Nielsen, Steffen; Hansen, Elo Harald

1997-01-01

A volume-based flow injection (FI) procedure is described for the determination and speciation of trace inorganic arsenic, As(III) and As(V), via hydride generation-atomic absorption spectrometry (HG-AAS) of As(III). The determination of total arsenic is obtained by on-line reduction of As(V) to As...

Monolayer group-III monochalcogenides by oxygen functionalization: a promising class of two-dimensional topological insulators

Science.gov (United States)

Zhou, Si; Liu, Cheng-Cheng; Zhao, Jijun; Yao, Yugui

2018-03-01

Monolayer group-III monochalcogenides (MX, M = Ga, In; X = S, Se, Te), an emerging category of two-dimensional (2D) semiconductors, hold great promise for electronics, optoelectronics and catalysts. By first-principles calculations, we show that the phonon dispersion and Raman spectra, as well as the electronic and topological properties of monolayer MX can be tuned by oxygen functionalization. Chemisorption of oxygen atoms on one side or both sides of the MX sheet narrows or even closes the band gap, enlarges work function, and significantly reduces the carrier effective mass. More excitingly, InS, InSe, and InTe monolayers with double-side oxygen functionalization are 2D topological insulators with sizeable bulk gap up to 0.21 eV. Their low-energy bands near the Fermi level are dominated by the px and py orbitals of atoms, allowing band engineering via in-plane strains. Our studies provide viable strategy for realizing quantum spin Hall effect in monolayer group-III monochalcogenides at room temperature, and utilizing these novel 2D materials for high-speed and dissipationless transport devices.

Ion Implantation in III-V Compound Semiconductors

Science.gov (United States)

1984-09-01

340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

As(III) and As(V) sorption on iron-modified non-pyrolyzed and pyrolyzed biomass from Petroselinum crispum (parsley).

Science.gov (United States)

Jiménez-Cedillo, M J; Olguín, M T; Fall, C; Colin-Cruz, A

2013-03-15

The sorption of As(III) and As(V) from aqueous solutions onto iron-modified Petroselinum crispum (PCFe) and iron-modified carbonaceous material from the pyrolysis of P. crispum (PCTTFe) was investigated. The modified sorbents were characterized with scanning electron microscopy. The sorbent elemental composition was determined with energy-dispersive X-ray spectroscopy (EDS). The principal functional groups from the sorbents were determined with FT-IR. The specific surfaces and points of zero charge (pzc) of the materials were also determined. As(III) and As(V) sorption onto the modified sorbents were performed in a batch system. After the sorption process, the As content in the liquid and solid phases was determined with atomic absorption and neutron activation analyses, respectively. After the arsenic sorption processes, the desorption of Fe from PCFe and PCTTFe was verified with atomic absorption spectrometry. The morphology of PC changed after iron modification. The specific area and pzc differed significantly between the iron-modified non-pyrolyzed and pyrolyzed P. crispum. The kinetics of the arsenite and arsenate sorption processes were described with a pseudo-second-order model. The Langmuir-Freundlich model provided the isotherms with the best fit. Less than 0.02% of the Fe was desorbed from the PCFe and PCTTFe after the As(III) and As(V) sorption processes. Copyright © 2013 Elsevier Ltd. All rights reserved.

Cutting edge: double-stranded DNA breaks in the IgV region gene were detected at lower frequency in affinity-maturation impeded GANP-/- mice.

Science.gov (United States)

Kawatani, Yousuke; Igarashi, Hideya; Matsui, Takeshi; Kuwahara, Kazuhiko; Fujimura, Satoru; Okamoto, Nobukazu; Takagi, Katsumasa; Sakaguchi, Nobuo

2005-11-01

Double-stranded DNA breaks (DSBs) at the IgV region (IgV) genes might be involved in somatic hypermutation and affinity-maturation of the B cell receptor in response to T cell-dependent Ag. By ligation-mediated PCR, we studied IgV DSBs that occurred in mature germinal center B cells in response to nitrophenyl-chicken gamma-globulin in a RAG1-independent, Ag-dependent, and IgV-selective manner. We quantified their levels in GANP-deficient B cells that have impaired generation of high-affinity Ab. GANP-/- B cells showed a decreased level of DSBs with blunt ends than control B cells and, on the contrary, the ganp gene transgenic (GANPTg) B cells showed an increased level. These results suggested that the level of IgV DSBs in germinal center B cells is associated with GANP expression, which is presumably required for B cell receptor affinity maturation.

Concomitant glenohumeral pathologies associated with acute and chronic grade III and grade V acromioclavicular joint injuries.

Science.gov (United States)

Jensen, Gunnar; Millett, Peter J; Tahal, Dimitri S; Al Ibadi, Mireille; Lill, Helmut; Katthagen, Jan Christoph

2017-08-01

The purpose of this study was to identify the risk of concomitant glenohumeral pathologies with acromioclavicular joint injuries grade III and V. Patients who underwent arthroscopically-assisted stabilization of acromioclavicular joint injuries grade III or grade V between 01/2007 and 12/2015 were identified in the patient databases of two surgical centres. Gender, age at index surgery, grade of acromioclavicular joint injury (Rockwood III or Rockwood V), and duration between injury and index surgery (classified as acute or chronic) were of interest. Concomitant glenohumeral pathologies were noted and their treatment was classified as debridement or reconstructive procedure. A total of 376 patients (336 male, 40 female) were included. Mean age at time of arthroscopic acromioclavicular joint reconstruction surgery was 42.1 ± 14.0 years. Overall, 201 patients (53%) had one or more concomitant glenohumeral pathologies. Lesions of the biceps tendon complex and rotator cuff were the most common. Forty-five patients (12.0%) had concomitant glenohumeral pathologies that required an additional repair. The remaining 156 patients (41.5%) received a debridement of their concomitant pathologies. Rockwood grade V compared to Rockwood grade III (p = 0.013; odds ratio 1.7), and chronic compared to acute injury were significantly associated with having a concomitant glenohumeral pathology (p = 0.019; odds ratio 1.7). The probability of having a concomitant glenohumeral pathology was also significantly associated with increasing age (p acromioclavicular joint injury of either grade III or V. Twenty-two percent of these patients with concomitant glenohumeral pathologies received an additional dedicated repair procedure. Although a significant difference in occurrence of concomitant glenohumeral pathologies was seen between Rockwood grades III and V, and between acute and chronic lesions, increasing age was identified as the most dominant predictor. Level IV, case series.

The between-population genetic architecture of growth, maturation, and plasticity in Atlantic salmon.

Science.gov (United States)

Debes, Paul Vincent; Fraser, Dylan John; Yates, Matthew; Hutchings, Jeffrey A

2014-04-01

The between-population genetic architecture for growth and maturation has not been examined in detail for many animal species despite its central importance in understanding hybrid fitness. We studied the genetic architecture of population divergence in: (i) maturation probabilities at the same age; (ii) size at age and growth, while accounting for maturity status and sex; and (iii) growth plasticity in response to environmental factors, using divergent wild and domesticated Atlantic salmon (Salmo salar). Our work examined two populations and their multigenerational hybrids in a common experimental arrangement in which salinity and quantity of suspended sediments were manipulated to mimic naturally occurring environmental variation. Average specific growth rates across environments differed among crosses, maturity groups, and cross-by-maturity groups, but a growth-rate reduction in the presence of suspended sediments was equal for all groups. Our results revealed both additive and nonadditive outbreeding effects for size at age and for growth rates that differed with life stage, as well as the presence of different sex- and size-specific maturation probabilities between populations. The major implication of our work is that estimates of the genetic architecture of growth and maturation can be biased if one does not simultaneously account for temporal changes in growth and for different maturation probabilities between populations. Namely, these correlated traits interact differently within each population and between sexes and among generations, due to nonadditive effects and a level of independence in the genetic control for traits. Our results emphasize the challenges to investigating and predicting phenotypic changes resulting from between-population outbreeding.

The mechanisms of detoxification of As(III), dimethylarsinic acid (DMA) and As(V) in the microalga Chlorella vulgaris.

Science.gov (United States)

Pantoja Munoz, L; Purchase, D; Jones, H; Raab, A; Urgast, D; Feldmann, J; Garelick, H

2016-06-01

The response of Chlorella vulgaris when challenged by As(III), As(V) and dimethylarsinic acid (DMA) was assessed through experiments on adsorption, efflux and speciation of arsenic (reduction, oxidation, methylation and chelation with glutathione/phytochelatin [GSH/PC]). Our study indicates that at high concentrations of phosphate (1.62mM of HPO4(2-)), upon exposure to As(V), cells are able to shift towards methylation of As(V) rather than PC formation. Treatment with As(V) caused a moderate decrease in intracellular pH and a strong increase in the concentration of free thiols (GSH). Passive surface adsorption was found to be negligible for living cells exposed to DMA and As(V). However, adsorption of As(III) was observed to be an active process in C. vulgaris, because it did not show saturation at any of the exposure periods. Chelation of As(III) with GS/PC and to a lesser extent hGS/hPC is a major detoxification mechanism employed by C. vulgaris cells when exposed to As(III). The increase of bound As-GS/PC complexes was found to be strongly related to an increase in concentration of As(III) in media. C. vulgaris cells did not produce any As-GS/PC complex when exposed to As(V). This may indicate that a reduction step is needed for As(V) complexation with GSH/PC. C. vulgaris cells formed DMAS(V)-GS upon exposure to DMA independent of the exposure period. As(III) triggers the formation of arsenic complexes with PC and homophytochelatins (hPC) and their compartmentalisation to vacuoles. A conceptual model was devised to explain the mechanisms involving ABCC1/2 transport. The potential of C. vulgaris to bio-remediate arsenic from water appeared to be highly selective and effective without the potential hazard of reducing As(V) to As(III), which is more toxic to humans. Copyright © 2016 Elsevier B.V. All rights reserved.

{alpha}{sub v}{beta}{sub 3} imaging can accurately distinguish between mature teratoma and necrosis in {sup 18}F-FDG-negative residual masses after treatment of non-seminomatous testicular cancer: a preclinical study

Energy Technology Data Exchange (ETDEWEB)

Aide, Nicolas [Francois Baclesse Cancer Centre and Caen University, Bioticla Team, EA1772, IFR 146 ICORE, GRECAN, Caen (France); Caen University Hospital and Francois Baclesse Cancer Centre, PET Unit, Caen (France); Centre Francois Baclesse, Service de Medecine Nucleaire, Caen (France); Briand, Melanie; Dutoit, Soizic; Deslandes, Edwiges; Poulain, Laurent [Francois Baclesse Cancer Centre and Caen University, Bioticla Team, EA1772, IFR 146 ICORE, GRECAN, Caen (France); Bohn, Pierre; Rouvet, Jean; Modzelewski, Romain; Vera, Pierre [Henri Becquerel Cancer Center and Rouen University Hospital and QuantIF- LITIS (EA4108), Department of Nuclear Medicine, Rouen (France); Lasnon, Charline [Caen University Hospital and Francois Baclesse Cancer Centre, PET Unit, Caen (France); Chasle, Jacques [Francois Baclesse Cancer Centre and Caen University, Pathology Department, Caen (France); Vela, Antony [Francois Baclesse Cancer Centre and Caen University, Radiophysics Unit, Caen (France); Carreiras, Franck [Universite de Cergy Pontoise, UFR Sciences et Techniques, ERRMECe, EA 1391, Institut des materiaux, Cergy-Pontoise (France)

2011-02-15

We assessed whether imaging {alpha}{sub v}{beta}{sub 3} integrin could distinguish mature teratoma from necrosis in human non-seminomatous germ cell tumour (NSGCT) post-chemotherapy residual masses. Human embryonal carcinoma xenografts (six/rat) were untreated (controls) or treated to form mature teratomas with low-dose cisplatin and all-trans retinoic acid (ATRA) over a period of 8 weeks. In another group, necrosis was induced in xenografts with high-dose cisplatin plus etoposide (two cycles).{sup 18}F-Fluorodeoxyglucose ({sup 18}F-FDG) small animal positron emission tomography (SA PET) imaging was performed in three rats (one control and two treated for 4 and 8 weeks with cisplatin+ATRA). Imaging of {alpha}{sub v}{beta}{sub 3} expression was performed in six rats bearing mature teratomas and two rats with necrotic lesions on a microSPECT/CT device after injection of the tracer [{sup 99m}Tc]HYNIC-RGD [6-hydrazinonicotinic acid conjugated to cyclo(Arg-Gly-Asp-D-Phe-Lys)]. Correlative immunohistochemistry studies of human and mouse {alpha}{sub v}{beta}{sub 3} expression were performed. Cisplatin+ATRA induced differentiation of the xenografts. After 8 weeks, some glandular structures and mesenchymal cells were visible; in contrast, control tumours showed undifferentiated tissues. SA PET imaging showed that mature teratoma had very low avidity for {sup 18}F-FDG [mean standardised uptake value (SUV{sub mean}) = 0.48 {+-} 0.05] compared to untreated embryonal carcinoma (SUV{sub mean} = 0.92 {+-} 0.13) (p = 0.005). {alpha}{sub v}{beta}{sub 3} imaging accurately distinguished mature teratoma (tumour to muscle ratio = 4.29 {+-} 1.57) from necrosis (tumour to muscle ratio = 1.3 {+-} 0.26) (p = 0.0002). Immunohistochemistry studies showed that {alpha}{sub v}{beta}{sub 3} integrin expression was strong in the glandular structures of mature teratoma lesions and negative in host stroma. Imaging {alpha}{sub v}{beta}{sub 3} integrin accurately distinguished mature teratoma from

Effect of calcium on adsorptive removal of As(III) and As(V) by iron oxide-based adsorbents

KAUST Repository

Uwamariya, V.; Petruševski, Branislav; Lens, Piet Nl L; Amy, Gary L.

2014-01-01

for filter columns with IOCS and GFH, respectively. The adsorption of As(III) and As(V) onto GFH follows a second-order reaction, with and without addition of calcium. The adsorption of As(III) and As(V) onto IOCS follows a first-order reaction without

Operative treatment of acute acromioclavicular dislocations Rockwood III and V-Comparative study between K-wires combined with FiberTape(®) vs. TightRope System(®).

Science.gov (United States)

Vrgoč, G; Japjec, M; Jurina, P; Gulan, G; Janković, S; Šebečić, B; Starešinić, M

2015-11-01

Acromioclavicular (AC) joint dislocations usually occur in a young active population as a result of a fall on the shoulder. Rockwood divided these dislocations into six types. Optimal treatment is still a matter of discussion. Many operative techniques have been developed, but the main choice is between open and minimally-invasive arthroscopic procedures. The aim of this study was to compare two different surgical methods on two groups of patients to find out which method is superior in terms of benefit to the patient. The methods were evaluated through objective and subjective scores, with a focus on complications and material costs. A retrospective two-centre study was conducted in patients with acute AC joint dislocation Rockwood types III and V. The two methods conducted were an open procedure using K-wires combined with FiberTape(®) (Arthrex, Naples, USA) (Group 1) and an arthroscopic procedure using the TightRope System(®) (Arthrex, Naples, USA) (Group 2). Groups underwent procedures during a two-year period. Diagnosis was based on the clinical and radiographic examination of both AC joints. Surgical treatment and rehabilitation were performed. Sixteen patients were included in this study: Group 1 comprised 10 patients, all male, average age 41.6 years (range 17-64 years), Rockwood type III (eight patients) and Rockwood type V (two patients); Group 2 had six patients, one female and five male, average age 37.8 years (range 18-58 years), Rockwood type III (two patients) and Rockwood type V (four patients). Time from injury to surgery was shorter and patients needed less time to return to daily activities in Group 1. Duration of the surgical procedure was shorter in Group 2 compared with Group 1. Complications of each method were noted. According to the measured scores and operative outcome between dislocation Rockwood type III and V, no significant difference was found. Implant material used in Group 2 was 4.7 times more expensive than that used in Group 1

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

Directory of Open Access Journals (Sweden)

Muhammad Ali Inam

2018-04-01

Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

Coherent-potential approximation for the lattice vibrations of mixed III-V crystals

International Nuclear Information System (INIS)

Kleinert, P.

1984-01-01

The coherent-potential approximation (CPA) is applied to the lattice dynamics of some III-V mixed crystals. The calculations are based on an eleven-parameter rigid-ion model (RIM 11). Explicit results are reported for the one-mode system In/sub 1-c/Ga/sub c/P and the two mixed-mode crystals In/sub 1-c/Ga/sub c/Sb and GaSb/sub 1-c/As/sub c/. Both, the reflectivity spectra and the composition dependence of vibrations at the GAMMA and X points are compared with existing experimental data. Force-constant changes are considered by the virtual-crystal approximation (VCA). The CPA theory is uniquely successful for III-V mixed-mode systems, which appear to switch from one-mode to two-mode behaviour. (author)

Spectrum of bone marrow changes in patients of chronic kidney disease (stage iii, iv and v)

International Nuclear Information System (INIS)

Latif, R.K.; Khan, S.A.; Ahmad, S.Q.; Arshad, U.

2017-01-01

To see the various hematological changes in the bone marrow of patients with chronic kidney disease (CKD) stage III, IV and V. Study Design: Cross sectional observational study.Place and Duration of Study: Study was conducted in the department of haematology (Pathology), Army Medical College, Rawalpindi and duration was one year, from Mar 2015 to Feb 2016. Material and Methods: Patients of both sexes and all age groups with CKD stage III, IV and V were included in this study. Patients' histories were recorded. Complete blood counts, bone marrow aspiration and trephine biopsy were done and evaluated microscopically. Mean blood counts of the patients in three groups of CKD were compared. Frequencies of various bone marrow (BM) findings in patients of CKD were calculated. Results: Out of 57 patients, 41 (71.9%) were males while 16 (28%) were females. Mean age was 60 years. There was no statistically significant difference between the mean hemoglobin, mean white cell count and mean platelets count of the patients in three groups of CKD. Reactive changes due to underlying CKD and inflammation were the most frequent findings in the BM of the patients. Conclusion: Anaemia of mild to moderate severity and reactive changes in the BM are the most frequent haematological findings encountered in patients suffering from advanced stage CKD. Since CKD is predominantly a disease of the elderly so it is not rare to find the co-morbidities including plasmacytosis, malignancies and their effects on the BM in patients of CKD. (author)

Vacancies and defect levels in III–V semiconductors

KAUST Repository

Tahini, H. A.

2013-08-13

Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

Vacancies and defect levels in III–V semiconductors

KAUST Repository

Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Energy Technology Data Exchange (ETDEWEB)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

2016-01-14

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Science.gov (United States)

Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

2016-01-01

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Il ruolo di El Escorial, V.III.6 e dei suoi discendenti nella tradizione manoscritta del Lucullus

Directory of Open Access Journals (Sweden)

Corinna Senore

2017-05-01

Full Text Available L’articolo riguarda un gruppo di sette codici che tramanda il testo del Lucullus di Cicerone e che appartiene al ramo della tradizione discendente dal manoscritto Wien, Österreichische Nationalbibliothek 189. I sette manoscritti costituiscono uno stadio della tradizione caratterizzato dalla presenza di tre lacune testuali. Sulla base di alcuni elementi paleografici e della presenza di una glossa riportata a margine del testo di uno di essi, El Escorial, V.III.6 (Scor4, e inglobata all’interno del testo degli altri sei, è possibile individuare in Scor4 il capostipite di questo gruppo della tradizione. Lo studio si occupa inoltre di fare chiarezza sui rapporti che intercorrono tra i sei discendenti di Scor4. The article focuses on a group of seven codices which carry the text of Cicero’s Lucullus. This group belongs to the branch of the tradition descending from the manuscript Wien, Österreichische Nationalbibliothek 189. The seven manuscripts represent a step of the tradition marked by the presence of some textual lacunas. I start from some paleographic elements and from the presence of a gloss on text’s margin of one of them, El Escorial, V.III.6 (Scor4. The gloss has been then incorporated in the text of the other six manuscripts and I assume that Scor4 is the founder of this group of tradition. Furthermore, this article aims to clarify the relations between the six descendants of Scor4.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Efficient n-type doping of zinc-blende III-V semiconductor nanowires

Science.gov (United States)

Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

2014-03-01

We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

Deactivation of group III acceptors in silicon during keV electron irradiation

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

1983-01-01

Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

Latent iron deficiency at birth influences auditory neural maturation in late preterm and term infants.

Science.gov (United States)

Choudhury, Vivek; Amin, Sanjiv B; Agarwal, Asha; Srivastava, L M; Soni, Arun; Saluja, Satish

2015-11-01

In utero latent iron deficiency has been associated with abnormal neurodevelopmental outcomes during childhood. Its concomitant effect on auditory neural maturation has not been well studied in late preterm and term infants. The objective was to determine whether in utero iron status is associated with auditory neural maturation in late preterm and term infants. This prospective cohort study was performed at Sir Ganga Ram Hospital, New Delhi, India. Infants with a gestational age ≥34 wk were eligible unless they met the exclusion criteria: craniofacial anomalies, chromosomal disorders, hemolytic disease, multiple gestation, third-trimester maternal infection, chorioamnionitis, toxoplasmosis, other infections, rubella, cytomegalovirus infection, and herpes simplex virus infections (TORCH), Apgar score 75 ng/mL) at birth. Twenty-three infants had latent iron deficiency. Infants with latent iron deficiency had significantly prolonged wave V latencies (7.10 ± 0.68 compared with 6.60 ± 0.66), III-V interpeak latencies (2.37 ± 0.64 compared with 2.07 ± 0.33), and I-V interpeak latencies (5.10 ± 0.57 compared with 4.72 ± 0.56) compared with infants with normal iron status (P neural maturation in infants at ≥34 wk gestational age. This trial was registered at clinicaltrials.gov as NCT02503397. © 2015 American Society for Nutrition.

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S M

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S.M.

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

Uric acid levels in plasma and urine in rats chronically exposed to inorganic As (III) and As(V).

Science.gov (United States)

Jauge, P; Del-Razo, L M

1985-07-01

The effect of inorganic arsenic (III) and arsenic (V) on renal excretion and plasma levels of uric acid was examined in rats. Oral administration of 1200 micrograms As/kg/day for 6 weeks diminished uric acid levels in plasma by 67.1% and 26.5% of control after the administration of As(III) and As(V), respectively. Renal excretion of uric acid was significantly reduced during the first 3 weeks following As (III) administration, with a subsequent increase to approach control values at the end of the treatment. When As(V) was administered, the diminution in renal excretion was significant at 6 weeks.

(NH4)[V1-xIIIVxIV(AsO4)F1-xOx]: A new mixed valence vanadium(III,IV) fluoro-arsenate with ferromagnetic interactions and electronic conductivity

International Nuclear Information System (INIS)

Berrocal, Teresa; Mesa, Jose L.; Pizarro, Jose L.; Bazan, Begona; Ruiz de Larramendi, Idoia; Arriortua, Maria I.; Rojo, Teofilo

2009-01-01

A new mixed valence vanadium(III,IV) fluoro-arsenate compound, with formula (NH 4 )[V 1-x III V x IV (AsO 4 )F 1-x O x ] and KTP structure-type, has been synthesized by mild hydrothermal techniques. The crystal structure has been solved from single crystal X-ray diffraction data in the Pna2 1 orthorhombic space group. The unit-cell parameters are a=13.196(2) A, b=6.628(1) A and c=10.7379(7) A with Z=8. The final R factors were R1=0.0438 and wR2=0.0943 [all data]. The crystal structure consists of a three-dimensional framework formed by (V III,IV O 4 F 2 ) octahedra and (AsO 4 ) 3- tetrahedra arsenate oxoanions. The vanadium(III,IV) cations, from the (V III,IV O 4 F 2 ) octahedra, are linked through the fluorine atoms giving rise to zigzag chains. The ammonium cations are located in the cavities of the structure compensating the anionic charge of the [V 1-x III V x IV (AsO 4 )F 1-x O x ] - inorganic skeleton. The thermal stability limit of the phase is 345 deg. C, around to this temperature the ammonium cation and fluoride anion are lost. The IR spectrum shows the characteristic bands of the (NH 4 ) + and (AsO 4 ) 3- ions. Magnetic measurements indicate the existence of weak ferromagnetic interactions. Electronic conductivity, via a hopping mechanism, occurs with an activation energy of 0.66 eV. - Graphical abstract: Polyhedral view of the crystal structure of (NH 4 )[V III 1-x V IV x (AsO 4 )F 1-x O x

Semi-quantitative Assessment of Brain Maturation by Conventional Magnetic Resonance Imaging in Neonates with Clinically Mild Hypoxic-ischemic Encephalopathy

Science.gov (United States)

Gao, Jie; Sun, Qin-Li; Zhang, Yu-Miao; Li, Yan-Yan; Li, Huan; Hou, Xin; Yu, Bo-Lang; Zhou, Xi-Hui; Yang, Jian

2015-01-01

Background: Mild hypoxic-ischemic encephalopathy (HIE) injury is becoming the major type in neonatal brain diseases. The aim of this study was to assess brain maturation in mild HIE neonatal brains using total maturation score (TMS) based on conventional magnetic resonance imaging (MRI). Methods: Totally, 45 neonates with clinically mild HIE and 45 matched control neonates were enrolled. Gestated age, birth weight, age after birth and postmenstrual age at magnetic resonance (MR) scan were homogenous in the two groups. According to MR findings, mild HIE neonates were divided into three subgroups: Pattern I, neonates with normal MR appearance; Pattern II, preterm neonates with abnormal MR appearance; Pattern III, full-term neonates with abnormal MR appearance. TMS and its parameters, progressive myelination (M), cortical infolding (C), involution of germinal matrix tissue (G), and glial cell migration bands (B), were employed to assess brain maturation and compare difference between HIE and control groups. Results: The mean of TMS was significantly lower in mild HIE group than it in the control group (mean ± standard deviation [SD] 11.62 ± 1.53 vs. 12.36 ± 1.26, P < 0.001). In four parameters of TMS scores, the M and C scores were significantly lower in mild HIE group. Of the three patterns of mild HIE, Pattern I (10 cases) showed no significant difference of TMS compared with control neonates, while Pattern II (22 cases), III (13 cases) all had significantly decreased TMS than control neonates (mean ± SD 10.56 ± 0.93 vs. 11.48 ± 0.55, P < 0.05; 12.59 ± 1.28 vs. 13.25 ± 1.29, P < 0.05). It was M, C, and GM scores that significantly decreased in Pattern II, while for Pattern III, only C score significantly decreased. Conclusions: The TMS system, based on conventional MRI, is an effective method to detect delayed brain maturation in clinically mild HIE. The conventional MRI can reveal the different retardations in subtle structures and development processes

Structure and stability of hexa-aqua V(III) cations in vanadium redox flow battery electrolytes.

Science.gov (United States)

Vijayakumar, M; Li, Liyu; Nie, Zimin; Yang, Zhenguo; Hu, JianZhi

2012-08-07

The vanadium(III) cation structure in mixed acid based electrolyte solution from vanadium redox flow batteries is studied by (17)O and (35/37)Cl nuclear magnetic resonance (NMR) spectroscopy, electronic spectroscopy and density functional theory (DFT) based computational modelling. Both computational and experimental results reveal that the V(III) species can complex with counter anions (sulfate/chlorine) depending on the composition of its solvation sphere. By analyzing the powder precipitate it was found that the formation of sulfate complexed V(III) species is the crucial process in the precipitation reaction. The precipitation occurs through nucleation of neutral species formed through deprotonation and ion-pair formation process. However, the powder precipitate shows a multiphase nature which warrants multiple reaction pathways for precipitation reaction.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

Science.gov (United States)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

Formation constants of Sm(III), Dy(III), Gd(III), Pr(III) and Nd(III) complexes of tridentate schiff base, 2-[(1H-benzimidazol-2-yl-methylene) amino] phenol

International Nuclear Information System (INIS)

Omprakash, K.L.; Chandra Pal, A.V.; Reddy, M.L.N.

1982-01-01

A new tridentate schiff base, 2- (1H-benzimidazol-2-yl-methylene)amino phenol derived from benzimididazole-2-carbo-xaldehyde and 2-aminophenol has been synthesised and characterised by spectral and analytical data. Proton-ligand formation constants of the schiff base and metal-ligand formation constants of its complexes with Sm(III), Dy(III), Gd(III), Nd(III) and Pr(III) have been determined potentiometrically in 50% (v/v) aqueous dioxane at an ionic strength of 0.1M (NaClO 4 ) and at 25deg C using the Irving-Rossotti titration technique. The order of stability constants (logβ 2 ) is found to be Sm(III)>Dy(III)>Gd(III)>Pr(III)>Nd(III). (author)

Formation constants of Sm(III), Dy(III), Gd(III), Pr(III) and Nd(III) complexes of tridentate schiff base, 2-((1H-benzimidazol-2-yl-methylene) amino) phenol

Energy Technology Data Exchange (ETDEWEB)

Omprakash, K L; Chandra Pal, A V; Reddy, M L.N. [Osmania Univ., Hyderabad (India). Dept. of Chemistry

1982-03-01

A new tridentate schiff base, 2- (1H-benzimidazol-2-yl-methylene)amino phenol derived from benzimididazole-2-carbo-xaldehyde and 2-aminophenol has been synthesised and characterised by spectral and analytical data. Proton-ligand formation constants of the schiff base and metal-ligand formation constants of its complexes with Sm(III), Dy(III), Gd(III), Nd(III) and Pr(III) have been determined potentiometrically in 50% (v/v) aqueous dioxane at an ionic strength of 0.1M (NaClO/sub 4/) and at 25deg C using the Irving-Rossotti titration technique. The order of stability constants (log..beta../sub 2/) is found to be Sm(III)>Dy(III)>Gd(III)>Pr(III)>Nd(III).

30 CFR 57.22205 - Doors on main fans (I-A, II-A, III, and V-A mines).

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Doors on main fans (I-A, II-A, III, and V-A... main fans (I-A, II-A, III, and V-A mines). In mines ventilated by multiple main fans, each main fan... reversal through the fan. The doors shall be located so that they are not in direct line with explosive...

Effect of calcium on adsorptive removal of As(III) and As(V) by iron oxide-based adsorbents

KAUST Repository

Uwamariya, V.

2014-06-25

The effects of calcium on the equilibrium adsorption capacity of As(III) and As(V) onto iron oxide-coated sand (IOCS) and granular ferric hydroxide (GFH) were investigated through batch experiments, rapid small-scale column tests (RSSCT) and kinetics modelling. Batch experiments showed that at calcium concentrations≤20 mg/L, high As(III) and As(V) removal efficiencies by IOCS and GFH are achieved at pH 6. An increase of the calcium concentration to 40 and 80 mg/L reversed this trend, giving higher removal efficiencies at higher pH (8). The adsorption capacities of IOCS and GFH at an equilibrium arsenic concentration of 10 g/L were found to be between 2.0 and 3.1 mg/g for synthetic water without calcium and between 2.8 and 5.3 mg/g when 80 mg/L of calcium was present at the studied pH values. After 10 hours of filter run in RSSCT, approximately 1000 empty bed volumes, the ratios of C/Co for As(V) were 26% and 18% for calcium-free model water; and only 1% and 0.2% after addition of 80 mg/L of Ca for filter columns with IOCS and GFH, respectively. The adsorption of As(III) and As(V) onto GFH follows a second-order reaction, with and without addition of calcium. The adsorption of As(III) and As(V) onto IOCS follows a first-order reaction without calcium addition, and moves to the second-reaction-order kinetics when calcium is added. Based on the intraparticle diffusion model, the main controlling mechanism for As(III) adsorption is intraparticle diffusion, while surface diffusion contributes greatly to the adsorption of As(V).

Surgical management of complete diaphyseal third metacarpal and metatarsal bone fractures: clinical outcome in 10 mature horses and 11 foals.

Science.gov (United States)

Bischofberger, A S; Fürst, A; Auer, J; Lischer, C

2009-05-01

Osteosynthesis of third metacarpal (McIII) and third metatarsal (MtIII) bone fractures in horses is a surgical challenge and complications surrounding the repair are common. Retrospective studies evaluating surgical repair, complications and outcome are necessary to increase knowledge and improve success of long bone fracture repair in the horse. To evaluate clinical findings, surgical repair, post operative complications and outcome of 10 mature horses and 11 foals with McIII or MtIII fractures that were treated with open reduction and internal fixation (ORIF). Medical records were reviewed and follow-up information obtained by means of radiographs and/or telephone questionnaire. Survival was achieved in 62% of the horses (3 mature/10 foals). On long-term evaluation (> 6 months) 11 horses (2 mature/9 foals) were fit for their intended activity, one mature horse had a chronic low grade lameness, and one foal was lost to follow-up because it was sold. The main fracture types were simple transverse (333%) or simple oblique (28.6%) and 71.4% of the fractures were open, 3 Type I (one mature/2 foals) and 12 type II (7 mature/5 foals). The preoperative assessment revealed inadequate emergency treatment in 10 horses (5 mature/5 foals; 47.6%). Survival rate of horses with open fractures was 12.5% (1/8) in mature and 85.7% (6/7) in foals. Post operative incisional infection (4 mature, 3 foals) was only managed successfully in 2 foals. Fracture instability related to inadequate fracture fixation technique occurred in 4 horses (all mature) and was always associated with unsuccessful outcome. Age, bodyweight and infection are strongly associated with outcome in treatment of complete McIII/MtIII fractures. Rigid fixation using plates and screws can be successful in treatment of closed or open, complete diaphyseal McIII/MtIII fractures in mature horses and foals. Instable fixation, infection and a bodyweight > 320 kg are major risk factors for unsuccessful outcome.

Polarity Control in Group-III Nitrides beyond Pragmatism

Science.gov (United States)

Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

2016-05-01

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

Study on competitive adsorption mechanism among oxyacid-type heavy metals in co-existing system: Removal of aqueous As(V), Cr(III) and As(III) using magnetic iron oxide nanoparticles (MIONPs) as adsorbents

Science.gov (United States)

Lin, Sen; Lian, Cheng; Xu, Meng; Zhang, Wei; Liu, Lili; Lin, Kuangfei

2017-11-01

The adsorption and co-adsorption of As(V), Cr(VI) and As(III) onto the magnetic iron oxide nanoparticles (MIONPs) surface were investigated comprehensively to clarify the competitive processes. The results reflected that the MIONPs had remarkable preferential adsorption to As(V) compared with Cr(VI) and As(III). And it was determined, relying on the analysis of heavy metals variations on the MIONPs surface at different co-adsorption stages using FTIR and XPS, that the inner-sphere complexation made vital contribution to the preferential adsorption for As(V), corresponding with the replacement experiments where As(V) could grab extensively active sites on the MIONPs pre-occupied by As(III) or Cr(V) uniaxially. The desorption processes displayed that the strongest affinity between the MIONPs and As(V) where As(III) and Cr(VI) were more inclined to wash out. It is wish to provide a helpful direction with this study for the wastewater treatment involving multiple oxyacid-type heavy metals using MIONPs as adsorbents.

Growth of group III nitride films by pulsed electron beam deposition

International Nuclear Information System (INIS)

Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

2009-01-01

We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

Oxygen perovskites with pentavalent ruthenium A/sub 2/sup(II)Bsup(III)Rusup(V)O/sub 6/ with Asup(II) = Ba, Sr

Energy Technology Data Exchange (ETDEWEB)

Bader, H; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

1980-07-01

The perovskites Ba/sub 2/Bsup(III)Rusup(V)O/sub 6/ with Bsup(III) = La, Nd, Sm, Eu, Gd, Dy, Y are cubic (Bsup(III) = La: a = 8.54 A; Y: a = 8.33 A) with a partial order for Bsup(III) and Rusup(V). The Sc compound, Ba/sub 2/ScRuO/sub 6/, has a hexagonal 6L structure (a = 5.79 A; c = 14.22 A; sequence (hcc)/sub 2/). The lattice of the Sr perovskites, Sr/sub 2/Bsup(III)Rusup(V)O/sub 6/, with Bsup(III) = Eu, Gd, Dy, Y is rhombic distorted. The IR and FIR spectra are discussed.

Adsorption of As(III), As(V) and Cu(II) on zirconium oxide immobilized alginate beads in aqueous phase.

Science.gov (United States)

Kwon, Oh-Hun; Kim, Jong-Oh; Cho, Dong-Wan; Kumar, Rahul; Baek, Seung Han; Kurade, Mayur B; Jeon, Byong-Hun

2016-10-01

A composite adsorbent to remove arsenite [As(III)], arsenate [As(V)], and copper [Cu(II)] from aqueous phase was synthesized by immobilizing zirconium oxide on alginate beads (ZOAB). The composition (wt%) of ZOAB (Zr-34.0; O-32.7; C-21.3; Ca-1.0) was confirmed by energy dispersive X-ray (EDX) analysis. Sorption studies were conducted on single and binary sorbate systems, and the effects of contact time, initial adsorbate concentration, and pH on the adsorption performance of ZOAB (pHPZC = 4.3) were monitored. The sorption process for As(III)/As(V) and Cu(II) reached an equilibrium state within 240 h and 24 h, respectively, with maximum sorption capacities of 32.3, 28.5, and 69.9 mg g(-1), respectively. The addition of Cu(II) was favorable for As(V) sorption in contrast to As(III). In the presence of 48.6 mg L(-1) Cu(II), the sorption capacity of As(V) increased from 1.5 to 3.8 mg g(-1) after 240 h. The sorption data for As(III)/As(V) and Cu(II) conformed the Freundlich and Langmuir isotherm models, respectively. The adsorption of As(III), As(V), and Cu(II) followed pseudo second order kinetics. The effect of arsenic species on Cu(II) sorption was insignificant. The results of present study demonstrated that the synthesized sorbent could be useful for the simultaneous removal of both anionic and cationic contaminants from wastewaters. Copyright © 2016 Elsevier Ltd. All rights reserved.

Changes in histoanatomical distribution of types I, III and V collagen promote adaptative remodeling in posterior tibial tendon rupture

Directory of Open Access Journals (Sweden)

Érika Satomi

2008-01-01

Full Text Available INTRODUCTION: Posterior tibial tendon dysfunction is a common cause of adult flat foot deformity, and its etiology is unknown. PURPOSE: In this study, we characterized the morphologic pattern and distribution of types I, III and V collagen in posterior tibial tendon dysfunction. METHOD: Tendon samples from patients with and without posterior tibial tendon dysfunction were stained by immunofluorescence using antibodies against types I, III and V collagen. RESULTS: Control samples showed that type V deposited near the vessels only, while surgically obtained specimens displayed type V collagen surrounding other types of collagen fibers in thicker adventitial layers. Type III collagen levels were also increased in pathological specimens. On the other hand, amounts of collagen type I, which represents 95% of the total collagen amount in normal tendon, were decreased in pathological specimens. CONCLUSION: Fibrillogenesis in posterior tibial tendon dysfunction is altered due to higher expression of types III and V collagen and a decreased amount of collagen type I, which renders the originating fibrils structurally less resistant to mechanical forces.

30 CFR 57.22204 - Main fan operation and inspection (I-A, II-A, III, and V-A mines).

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fan operation and inspection (I-A, II-A, III, and V-A mines). 57.22204 Section 57.22204 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... Main fan operation and inspection (I-A, II-A, III, and V-A mines). Main fans shall be— (a) Provided...

Reduction of As(V) to As(III) by commercial ZVI or As(0) with acid-treated ZVI

International Nuclear Information System (INIS)

Sun, Fenglong; Osseo-Asare, Kwadwo A.; Chen, Yongsheng; Dempsey, Brian A.

2011-01-01

Graphical abstract: Acid-treated ZVI (right) reduced As(V) to the less toxic As(0) while commercial ZVI reduced As(V) to As(III). There was no lag phase in either reaction when rigorously anoxic conditions were maintained. Highlights: ► Acid-treated ZVI reduced As(V) to the less toxic As(0). ► Commercial ZVI reduced As(V) to As(III), which was not released to solution. ► Magnetite/Fe(II) did not reduce As(V) even though the reaction is thermodynamically spontaneous. ► No lag phase was observed in any of the reactions, contrary to prior reports. ► Rigorously anoxic conditions seem necessary for observing these reactions. - Abstract: Zero-valent iron (ZVI) consists of an elemental iron core surrounded by a shell of corrosion products, especially magnetite. ZVI is used for in situ removal or immobilization of a variety of contaminants but the mechanisms for removal of arsenic remain controversial and the mobility of arsenic after reaction with ZVI is uncertain. These issues were addressed by separately studying reactions of As(V) with magnetite, commercial ZVI, and acid-treated ZVI. Strictly anoxic conditions were used. Adsorption of As(V) on magnetite was fast with pH dependence similar to previous reports using oxic conditions. As(V) was not reduced by magnetite and Fe(II) although the reaction is thermodynamically spontaneous. As(V) reactions with ZVI were also fast and no lag phase was observed which was contrary to previous reports. Commercial ZVI reduced As(V) to As(III) only when As(V) was adsorbed, i.e., for pH < 7. As(III) was not released to solution. Acid-treated ZVI reduced As(V) to As(0), shown using wet chemical analyses and XANES/EXAFS. Comparisons were drawn between reactivity of acid-treated ZVI and nano-ZVI; if true then acid-treated ZVI could provide similar reactive benefits at lower cost.

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

Science.gov (United States)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

DX centers in III-V semiconductors under hydrostatic pressure

International Nuclear Information System (INIS)

Wolk, J.A.

1992-11-01

DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

Structure-Activity Relationships of the Human Immunodeficiency Virus Type 1 Maturation Inhibitor PF-46396.

Science.gov (United States)

Murgatroyd, Christopher; Pirrie, Lisa; Tran, Fanny; Smith, Terry K; Westwood, Nicholas J; Adamson, Catherine S

2016-09-15

HIV-1 maturation inhibitors are a novel class of antiretroviral compounds that consist of two structurally distinct chemical classes: betulinic acid derivatives and the pyridone-based compound PF-46396. It is currently believed that both classes act by similar modes of action to generate aberrant noninfectious particles via inhibition of CA-SP1 cleavage during Gag proteolytic processing. In this study, we utilized a series of novel analogues with decreasing similarity to PF-46396 to determine the chemical groups within PF-46396 that contribute to antiviral activity, Gag binding, and the relationship between these essential properties. A spectrum of antiviral activity (active, intermediate, and inactive) was observed across the analogue series with respect to CA-SP1 cleavage and HIV-1 (NL4-3) replication kinetics in Jurkat T cells. We demonstrate that selected inactive analogues are incorporated into wild-type (WT) immature particles and that one inactive analogue is capable of interfering with PF-46396 inhibition of CA-SP1 cleavage. Mutations that confer PF-46396 resistance can impose a defective phenotype on HIV-1 that can be rescued in a compound-dependent manner. Some inactive analogues retained the capacity to rescue PF-46396-dependent mutants (SP1-A3V, SP1-A3T, and CA-P157S), implying that they can also interact with mutant Gag. The structure-activity relationships observed in this study demonstrate that (i) the tert-butyl group is essential for antiviral activity but is not an absolute requirement for Gag binding, (ii) the trifluoromethyl group is optimal but not essential for antiviral activity, and (iii) the 2-aminoindan group is important for antiviral activity and Gag binding but is not essential, as its replacement is tolerated. Combinations of antiretroviral drugs successfully treat HIV/AIDS patients; however, drug resistance problems make the development of new mechanistic drug classes an ongoing priority. HIV-1 maturation inhibitors are novel as they

Spectroscopic characterization of III-V semiconductor nanomaterials

Science.gov (United States)

Crankshaw, Shanna Marie

III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

Mature seeds for in vitro sanitation of the Grapevine leafroll associated virus (GLRaV-1andGLRaV-3 from grape (Vitis vinifera L.

Directory of Open Access Journals (Sweden)

Rosa Peiró

2015-06-01

Full Text Available The conservation of old grapevine varieties is important since they are adapted to specific climate conditions and may carry genes interesting to breeders. As virus infection is common in grapevine varieties, the use of virus free materials is of great importance. In this work, we used somatic embryogenesis for the sanitation of GLRaV-1 and GLRaV-3 viruses that were found after analyzing the putative presence of the five most common, economically important grape viruses by real-time multiplex RT-PCR in the old cultivar “Grumet Negre”. Unopened and opened inflorescences, fecundated ovaries, and, also, mature seeds were used as starting explants. Explants were cultured on plates with two embryogenesis induction media (Nitsch & McCown Woody plant medium that contained the growth regulator thidiazuron and differed in their salt and vitamin compositions. One half of each kind of explant was cut prior to being cultured. After five months of culture, embryos had only developed from seeds that were cut previous to sowing. To the best of our knowledge, this is the first time that mature seeds have been used for inducing embryogenesis in grape. A total of 42% of the embryos transferred to tubes for germination regenerated into normal plantlets. The absence of both the GLRaV-1 and GLRaV-3 viruses in all regenerated plants was confirmed by real-time uniplex RT-PCR. So, this protocol can be used for sanitation and also for micropropagation.

Mature seeds for in vitro sanitation of the Grapevine leafroll associated virus (GLRaV-1 and GLRaV-3) from grape (Vitis vinifera L.)

Energy Technology Data Exchange (ETDEWEB)

Peiró, R.; Gammoudi, N.; Yuste, A.; Olmos, A.; Gisbert, C.

2015-07-01

The conservation of old grapevine varieties is important since they are adapted to specific climate conditions and may carry genes interesting to breeders. As virus infection is common in grapevine varieties, the use of virus free materials is of great importance. In this work, we used somatic embryogenesis for the sanitation of GLRaV-1 and GLRaV-3 viruses that were found after analyzing the putative presence of the five most common, economically important grape viruses by real-time multiplex RT-PCR in the old cultivar “Grumet Negre”. Unopened and opened inflorescences, fecundated ovaries, and, also, mature seeds were used as starting explants. Explants were cultured on plates with two embryogenesis induction media (Nitsch & McCown Woody plant medium) that contained the growth regulator thidiazuron and differed in their salt and vitamin compositions. One half of each kind of explant was cut prior to being cultured. After five months of culture, embryos had only developed from seeds that were cut previous to sowing. To the best of our knowledge, this is the first time that mature seeds have been used for inducing embryogenesis in grape. A total of 42% of the embryos transferred to tubes for germination regenerated into normal plantlets. The absence of both the GLRaV-1 and GLRaV-3 viruses in all regenerated plants was confirmed by real-time uniplex RT-PCR. So, this protocol can be used for sanitation and also for micropropagation. (Author)

Maturity and maturity models in lean construction

Directory of Open Access Journals (Sweden)

Claus Nesensohn

2014-03-01

Full Text Available In recent years there has been an increasing interest in maturity models in management-related disciplines; which reflects a growing recognition that becoming more mature and having a model to guide the route to maturity can help organisations in managing major transformational change. Lean Construction (LC is an increasingly important improvement approach that organisations seek to embed. This study explores how to apply the maturity models to LC. Hence the attitudes, opinions and experiences of key industry informants with high levels of knowledge of LC were investigated. To achieve this, a review of maturity models was conducted, and data for the analysis was collected through a sequential process involving three methods. First a group interview with seven key informants. Second a follow up discussion with the same individuals to investigate some of the issues raised in more depth. Third an online discussion held via LinkedIn in which members shared their views on some of the results. Overall, we found that there is a lack of common understanding as to what maturity means in LC, though there is general agreement that the concept of maturity is a suitable one to reflect the path of evolution for LC within organisations.

Complexation of the actinides (III, IV and V) with organic acids

International Nuclear Information System (INIS)

Leguay, S.

2012-01-01

A thorough knowledge of the chemical properties of actinides is now required in a wide variety of fields: extraction processes involved in spent fuel reprocessing, groundwater in the vicinity of radioactive waste packages, environmental and biological media in the case of accidental release of radionuclides. In this context, the present work has been focused on the complexation of Am(III), Cm(III), Cf(III), Pu(IV) and Pa(V) with organic ligands: DTPA, NTA and citric acid. The complexation of pentavalent protactinium with citric and nitrilotriacetic acids was studied using liquid-liquid extraction with the element at tracer scale (C Pa ≤ 10 -10 M). The order and the mean charge of each complex were determined from the analysis of the systematic variations of the distribution coefficient of Pa(V) as function of ligand and proton concentration. Then, the apparent formation constants related of the so-identified complexes were calculated. The complexation of trivalent actinides with DTPA was studied by fluorescence spectroscopy (TRLFS) and capillary electrophoresis (CE-ICP-MS). The coexistence of the mono-protonated and non-protonated complexes (AnHDTPA - and AnDTPA 2- ) in acidic media (1.5 ≤ pH ≤ 3.5) was shown unambiguously. Literature data have been reinterpreted by taking into account both complexes and a consistent set of formation constants of An(III)-DTPA has been obtained. The experimental study was completed by theoretical calculations (DFT) on Cm-DTPA system. The coordination geometry of Cm in CmDTPA 2- and CmHDTPA - including water molecules in the first coordination sphere has been determined as well as interatomic distances. Finally, a study on the complexation of Pu(IV) with DTPA was initiated in order to more closely mimic physiological conditions. A three-step approach was proposed to avoid plutonium hydrolysis: i/ complexation of Pu(IV) with (NTA) in order to protect Pu(IV) from hydrolysis (at low pH) ii/ increase of pH toward neutral conditions

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

Science.gov (United States)

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

Synthesis and oxidation of CpIrIII compounds: functionalization of a Cp methyl group.

Science.gov (United States)

Park-Gehrke, Lisa S; Freudenthal, John; Kaminsky, Werner; Dipasquale, Antonio G; Mayer, James M

2009-03-21

[CpIrCl(2)](2) () and new CpIr(III)(L-L)X complexes (L-L = N-O or C-N chelating ligands; X = Cl, I, Me) have been prepared and their reactivity with two-electron chemical oxidants explored. Reaction of with PhI(OAc)(2) in wet solvents yields a new chloro-bridged dimer in which each of the Cp ligands has been singly acetoxylated to form [Cp(OAc)Ir(III)Cl(2)](2) () (Cp(OAc) = eta(5)-C(5)Me(4)CH(2)OAc). Complex and related carboxy- and alkoxy-functionalized Cp(OR) complexes can also be prepared from plus (PhIO)(n) and ROH. [Cp(OAc)Ir(III)Cl(2)](2) () and the methoxy analogue [Cp(OMe)Ir(III)Cl(2)](2) () have been structurally characterized. Treatment of [CpIrCl(2)](2) () with 2-phenylpyridine yields CpIr(III)(ppy)Cl () (ppy = cyclometallated 2-phenylpyridyl) which is readily converted to its iodide and methyl analogues CpIr(III)(ppy)I and CpIr(III)(ppy)Me (). CpIr(III) complexes were also prepared with N-O chelating ligands derived from anthranilic acid (2-aminobenzoic acid) and alpha-aminoisobutyric acid (H(2)NCMe(2)COOH), ligands chosen to be relatively oxidation resistant. These complexes and were reacted with potential two-electron oxidants including PhI(OAc)(2), hexachlorocyclohexadienone (C(6)Cl(6)O), N-fluoro-2,4,6-trimethylpyridinium (Me(3)pyF(+)), [Me(3)O]BF(4) and MeOTf (OTf = triflate, CF(3)SO(3)). Iridium(V) complexes were not observed or implicated in these reactions, despite the similarity of the potential products to known CpIr(V) species. The carbon electrophiles [Me(3)O]BF(4) and MeOTf appear to react preferentially at the N-O ligands, to give methyl esters in some cases. Overall, the results indicate that Cp is not inert under oxidizing conditions and is therefore not a good supporting ligand for oxidizing organometallic complexes.

Deviations from Vegard’s law in ternary III-V alloys

KAUST Repository

Murphy, S. T.; Chroneos, Alexander; Grimes, R. W.; Jiang, C.; Schwingenschlö gl, Udo

2010-01-01

the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a

Distribution of alpha3, alpha5 and alpha(v) integrin subunits in mature and immature human oocytes.

Science.gov (United States)

Capmany, G; Mart, M; Santaló, J; Bolton, V N

1998-10-01

The distribution of three integrin subunits, alpha3, alpha5 and alpha(v), in immature and mature human oocytes has been examined using immunofluorescence and confocal microscopy. The results demonstrate that both alpha5 and alpha(v) are present at the germinal vesicle stage, while alpha3 was only detected in oocytes after germinal vesicle breakdown, in metaphase I and II stage oocytes. The cortical concentration of integrin subunits alpha3 and alpha5 is consistent with their localization in the oolemma. In contrast, the homogeneous distribution of alpha(v) throughout the oocyte suggests the existence of cytoplasmic reservoirs of this protein in the oocyte.

High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

Diagnostic accuracy of circulating thyrotropin receptor messenger RNA combined with neck ultrasonography in patients with Bethesda III-V thyroid cytology.

Science.gov (United States)

Aliyev, Altay; Patel, Jinesh; Brainard, Jennifer; Gupta, Manjula; Nasr, Christian; Hatipoglu, Betul; Siperstein, Allan; Berber, Eren

2016-01-01

The aim of this study was to analyze the usefulness of thyrotropin receptor messenger RNA (TSHR-mRNA) combined with neck ultrasonography (US) in the management of thyroid nodules with Bethesda III-V cytology. Cytology slides of patients with a preoperative fine needle aspiration (FNA) and TSHR-mRNA who underwent thyroidectomy between 2002 and 2011 were recategorized based on the Bethesda classification. Results of thyroid FNA, TSHR-mRNA, and US were compared with the final pathology. Sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV) were calculated. There were 12 patients with Bethesda III, 112 with Bethesda IV, and 58 with Bethesda V cytology. The sensitivity of TSHR-mRNA in predicting cancer was 33%, 65%, and 79 %, and specificity was 67%, 66%, and 71%, for Bethesda III, IV, and V categories, respectively. For the same categories, the PPV of TSHR-mRNA was 25%, 33%, and 79%, respectively; whereas the NPV was 75%, 88%, and 71%, respectively. The addition of neck US to TSHR-mRNA increased the NPV to 100% for Bethesda III, and 86%, for Bethesda IV, and 82% for Bethesda V disease. This study documents the potential usefulness of TSHR-mRNA for thyroid nodules with Bethesda III-V FNA categories. TSHR-mRNA may be used to exclude Bethesda IV disease. A large sample analysis is needed to determine its accuracy for Bethesda category III nodules. Copyright © 2016 Elsevier Inc. All rights reserved.

Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

Science.gov (United States)

McCleskey, R. Blaine; Nordstrom, D. Kirk; Maest, A.S.

2004-01-01

Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2SO4, and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO4.

Preservation of water samples for arsenic(III/V) determinations: an evaluation of the literature and new analytical results

International Nuclear Information System (INIS)

McCleskey, R.Blaine; Nordstrom, D.Kirk; Maest, Ann S.

2004-01-01

Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2 SO 4 , and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO 4

Multiplex real-time PCR SYBR Green for detection and typing of group III Clostridium botulinum.

Science.gov (United States)

Anniballi, Fabrizio; Auricchio, Bruna; Delibato, Elisabetta; Antonacci, Monia; De Medici, Dario; Fenicia, Lucia

2012-01-27

Clostridium botulinum type C and type D belonging to the group III organisms, are mainly responsible for animal botulism outbreaks. Clinical signs alone are often insufficient to make a diagnosis of botulism and a laboratory confirmation is required. Laboratory confirmation can be performed by demonstrating the presence of botulinum neurotoxins in serum, gastrointestinal contents, liver, wound of sick or dead animals, or by demonstrating the presence of C. botulinum in gastrointestinal contents, liver, and wound. Demonstration of spores in gastrointestinal contents or tissue of animals with clinical signs indicative of botulism reinforces the clinical diagnosis. With the aim of detecting and typing C. botulinum group III organisms, a multiplex real-time PCR SYBR Green was developed and in-house validated. Selectivity, limit of detection, relative accuracy, relative specificity, relative sensitivity, and repeatability of the method were investigated. The multiplex real-time PCR SYBR green used showed a 100% selectivity, 100% relative accuracy, 100% relative specificity, 100% relative sensitivity and a limit of detection of 277 and 580 DNA copies for C. botulinum type C and C. botulinum type D, respectively. The method reported here represents a suitable tool for laboratory diagnosis of type C and D botulism and for testing a large number of samples collected during the animal botulism surveillance and prevention activities. Copyright © 2011 Elsevier B.V. All rights reserved.

Group III mGlu receptor agonists potentiate the anticonvulsant effect of AMPA and NMDA receptor block.

Science.gov (United States)

De Sarro, Giovambattista; Chimirri, Alba; Meldrum, Brian S

2002-09-06

We report the anticonvulsant action in DBA/2 mice of two mGlu Group III receptor agonists: (R,S)-4-phosphonophenylglycine, (R,S)-PPG, a compound with moderate mGlu8 selectivity, and of (1S,3R,4S)-1-aminocyclopentane-1,2,4-tricarboxylic acid, ACPT-1, a selective agonist for mGlu4alpha receptors. Both compounds, given intracerebroventricularly at doses which did not show marked anticonvulsant activity, produced a consistent shift to the left of the dose-response curves (i.e. enhanced the anticonvulsant properties) of 1-(4'-aminophenyl)-3,5-dihydro-7,8-dimethoxy-4H-2,3-benzodiazepin-4-one hydrochloride, CFM-2, a noncompetitive AMPA receptor antagonist, and 3-((+/-)-2-carboxypiperazin-4-yl)-1-phosphonic acid, CPPene, a competitive NMDA receptor antagonist, in DBA/2 mice. In addition, (R,S)-PPG and ACPT-1 administered intracerebroventricularly prolonged the time course of the anticonvulsant properties of CFM-2 (33 micromol/kg, i.p.) and CPPene (3.3 micromol/kg, i.p.) administered intraperitoneally. We conclude that modest reduction of synaptic glutamate release by activation of Group III metabotropic receptors potentiates the anticonvulsant effect of AMPA and NMDA receptor blockade. Copyright 2002 Elsevier Science B.V.

Solvent Extraction and Separation of Chromium(III) and (V I) in Aqueous Solutions with Trioctylphosphine Oxide

International Nuclear Information System (INIS)

Sekine, T.; Yamada, M.

1999-01-01

The solvent extraction of chromium(III) and (V I) in aqueous solutions with a solvating type extractant, trioctylphosphine oxide(TOPO), in hexane is studied. Kinetically inert Cr 3+ is extracted from 1 mol dm -3 sodium perchlorate solution very quickly and quantitatively as Cr(H 2 O · TOPO) 6 3+ (CIO 4 -) 3 . Chromium(V I) in hydrochloric acid is extracted effectively as the H 2 CrO $ (H CI) n centre dot TOPO m species ( m = 2 or 3, n = 0 to 2) and the distribution ratio increased by an increase in the acid concentration. From these, a procedure is proposed for the extraction of both chromium(V I) and chromium(III) in aqueous solution separately with 0.1 mol dm -3 TOPO in hexane

Progress in III-V materials technology

Science.gov (United States)

Grant, Ian R.

2004-12-01

Compound semiconductors, in the form of GaAs and InP have achieved major commercial significance in areas of application such as mobile communications, displays and telecoms and offer a versatility of function beyond the capabilities of Si. III-V compounds, and in particular GaAs, have since their early development been the subject of defence related interest. Support from this sector established the basic materials technologies and nurtured development up until their commercial breakthrough into consumer products. GaAs, for example, now provides essential components for mobile phones and CD / DVD players. An overview is presented of the crystal growth and processing methods used in the manufacture of these materials. Current state of the art characteristics on crystal form and quality are discussed, together with the evolution of single crystal growth techniques. Consideration is given to how these principal compounds together with the minor materials, InSb, GaSb and InAs are employed in diverse applications over a broad spectral range, together with information on markets and future perspectives.

Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

Science.gov (United States)

Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

2016-09-01

The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

Deviations from Vegard’s law in ternary III-V alloys

KAUST Repository

Murphy, S. T.

2010-08-03

Vegard’s law states that, at a constant temperature, the volume of an alloy can be determined from a linear interpolation of its constituent’s volumes. Deviations from this description occur such that volumes are both greater and smaller than the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a tendency, with the exception of AlxGa1−xAs, for the volume of the ternary alloys to be smaller than that determined from the linear interpolation of the volumes of the MAs and BAs binary alloys. Importantly, we establish a simple relationship linking the relative size of the group III atoms in the alloy and the predicted magnitude of the deviation from Vegard’s law.

Reorientation of the Methyl Group in MAs(III) is the Rate-Limiting Step in the ArsM As(III) S-Adenosylmethionine Methyltransferase Reaction.

Science.gov (United States)

Packianathan, Charles; Li, Jiaojiao; Kandavelu, Palani; Sankaran, Banumathi; Rosen, Barry P

2018-03-01

The most common biotransformation of trivalent inorganic arsenic (As(III)) is methylation to mono-, di-, and trimethylated species. Methylation is catalyzed by As(III) S -adenosylmethionine (SAM) methyltransferase (termed ArsM in microbes and AS3MT in animals). Methylarsenite (MAs(III)) is both the product of the first methylation step and the substrate of the second methylation step. When the rate of the overall methylation reaction was determined with As(III) as the substrate, the first methylation step was rapid, whereas the second methylation step was slow. In contrast, when MAs(III) was used as the substrate, the rate of methylation was as fast as the first methylation step when As(III) was used as the substrate. These results indicate that there is a slow conformational change between the first and second methylation steps. The structure of CmArsM from the thermophilic alga Cyanidioschyzon merolae sp. 5508 was determined with bound MAs(III) at 2.27 Å resolution. The methyl group is facing the solvent, as would be expected when MAs(III) is bound as the substrate rather than facing the SAM-binding site, as would be expected for MAs(III) as a product. We propose that the rate-limiting step in arsenic methylation is slow reorientation of the methyl group from the SAM-binding site to the solvent, which is linked to the conformation of the side chain of a conserved residue Tyr70.

Technetium cyanide chemistry: synthesis and characterization of technetium(III) and -(V) cyanide complexes

International Nuclear Information System (INIS)

Trop, H.S.; Jones, A.G.; Davison, A.

1980-01-01

Several new technetium cyanide complexes have been prepared and characterized. The reaction of ammonium hexaiodotechnetate(IV) with potassium cyanide in refluxing aqueous methanol under nitrogen yields potassium heptacyanotechnetate(III) dihydrate, K 4 Tc(CN) 7 .2H 2 O (1). Infrared and Raman measurements indicate that 1 has a pentagonal bipyramidal structure (D/sub 5h/) in both solid and solution. Aqueous solutions of 1 are air sensitive, decomposing to potassium oxopentacyanotechnetate(V) tetrahydrate, K 2 TcO(CN) 5 .4H 2 O (2). This species can also be prepared from the reaction of TcO 2 .xH 2 O with hot aqueous potassium cyanide solutions. Hydrolysis of 2 in water yields potassium trans-dioxo-tetracyanotechnetate(V), K 3 TcO 2 (CN) 4 (3). Preparation of 3 can also be achieved from the treatment of [TcO 2 (Py) 4 ]ClO 4 .2H 2 O with aqueous potassium cyanide. Infrared and Raman measurements on 3 are consistent with the proposed trans-dioxo (D/sub 4h/) structure. Reaction of the oxotetrachlorotechnetate(V) anion, TcOCl 4 , with potassium cyanide in methanol produces trans-oxomethoxytetracyanotechnetate(V). [TcO(OMe)(CN) 4 ] (4). The full details of the synthesis and characterization of these interesting technetium(III) and -(V) complexes, as well as observations on the infrared and Raman spectra of trans-dioxo metal complexes and the hydrolysis of species 2, are presented

Environmentally-relevant concentrations of Al(III) and Fe(III) cations induce aggregation of free DNA by complexation with phosphate group.

Science.gov (United States)

Qin, Chao; Kang, Fuxing; Zhang, Wei; Shou, Weijun; Hu, Xiaojie; Gao, Yanzheng

2017-10-15

Environmental persistence of free DNA is influenced by its complexation with other chemical species and its aggregation mechanisms. However, it is not well-known how naturally-abundant metal ions, e.g., Al(III) and Fe(III), influence DNA aggregation. This study investigated aggregation behaviors of model DNA from salmon testes as influenced by metal cations, and elucidated the predominant mechanism responsible for DNA aggregation. Compared to monovalent (K + and Na + ) and divalent (Ca 2+ and Mg 2+ ) cations, Al(III) and Fe(III) species in aqueous solution caused rapid DNA aggregations. The maximal DNA aggregation occurred at 0.05 mmol/L Al(III) or 0.075 mmol/L Fe(III), respectively. A combination of atomic force microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy revealed that Al(III) and Fe(III) complexed with negatively charged phosphate groups to neutralize DNA charges, resulting in decreased electrostatic repulsion and subsequent DNA aggregation. Zeta potential measurements and molecular computation further support this mechanism. Furthermore, DNA aggregation was enhanced at higher temperature and near neutral pH. Therefore, DNA aggregation is collectively determined by many environmental factors such as ion species, temperature, and solution pH. Copyright © 2017 Elsevier Ltd. All rights reserved.

Members of WRKY Group III transcription factors are important in TYLCV defense signaling pathway in tomato (Solanum lycopersicum).

Science.gov (United States)

Huang, Ying; Li, Meng-Yao; Wu, Peng; Xu, Zhi-Sheng; Que, Feng; Wang, Feng; Xiong, Ai-Sheng

2016-10-07

Transmitted by the whitefly Bemisia tabaci, tomato yellow leaf curly virus (TYLCV) has posed serious threats to plant growth and development. Plant innate immune systems against various threats involve WRKY Group III transcription factors (TFs). This group participates as a major component of biological processes in plants. In this study, 6 WRKY Group III TFs (SolyWRKY41, SolyWRKY42, SolyWRKY53, SolyWRKY54, SolyWRKY80, and SolyWRKY81) were identified, and these TFs responded to TYLCV infection. Subcellular localization analysis indicated that SolyWRKY41 and SolyWRKY54 were nuclear proteins in vivo. Many elements, including W-box, were found in the promoter region of Group III TFs. Interaction network analysis revealed that Group III TFs could interact with other proteins, such as mitogen-activated protein kinase 5 (MAPK) and isochorismate synthase (ICS), to respond to biotic and abiotic stresses. Positive and negative expression patterns showed that WRKY Group III genes could also respond to TYLCV infection in tomato. The DNA content of TYLCV resistant lines after SolyWRKY41 and SolyWRKY54 were subjected to virus-induced gene silencing (VIGS) was lower than that of the control lines. In the present study, 6 WRKY Group III TFs in tomato were identified to respond to TYLCV infection. Quantitative real-time-polymerase chain reaction (RT-qPCR) and VIGS analyses demonstrated that Group III genes served as positive and negative regulators in tomato-TYLCV interaction. WRKY Group III TFs could interact with other proteins by binding to cis elements existing in the promoter regions of other genes to regulate pathogen-related gene expression.

New III-V cell design approaches for very high efficiency

Energy Technology Data Exchange (ETDEWEB)

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

1993-04-01

This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

As(III) oxidation by active chlorine and subsequent removal of As(V) by Al13 polymer coagulation using a novel dual function reagent.

Science.gov (United States)

Hu, Chengzhi; Liu, Huijuan; Chen, Guixia; Jefferson, William A; Qu, Jiuhui

2012-06-19

An electrochemically prepared water treatment reagent containing a high concentration of Al(13) polymer and active chlorine (PACC) showed promising potential for the removal of As(III) due to the combined function of oxidation and coagulation. The results indicated that PACC was effective for As(III) removal through oxidation by the active chlorine and subsequent removal of As(V) by coagulation with the Al(13) polymer. The As(III) was oxidized to As(V) by active chlorine in PACC, with a stoichiometric rate of 0.99 mg Cl(2)/mg As(III). The Al(13) polymer was the most active Al species responsible for As(V) removal in PACC. To meet As drinking water standards the stoichiometric weight ratio of Cl(2)/Al within PACC was 0.09 for the treatment of As(III). Considering the process of As(III) oxidation and As(V) coagulation together, the optimal pH conditions for the removal of As by PACC was within the neutral range, which facilitated the reaction of As(III) with active chlorine and favored the formation of Al hydroxide flocs. The presence of humic acid reduced the As(III) removal efficiency of PACC due to its negative influence on subsequent As(V) coagulation, and disinfection byproduct yields were very low in the presence of insufficient or stoichiometric active chlorine.

The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

Directory of Open Access Journals (Sweden)

Ramelan Ari Handono

2017-01-01

Full Text Available Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Hurni, C. A.; Speck, J. S.; Ringel, S. A.

2012-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH 3 -MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E C - 0.14 eV, E C - 0.21 eV, E C - 0.26 eV, E C - 0.62 eV, E C - 0.67 eV, E C - 2.65 eV, and E C - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E C - 0.14 eV and E C - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E C - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E C - 2.65 eV and E C - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH 3 -MBE grown m-plane GaN.

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

Blocking of indium incorporation by antimony in III-V-Sb nanostructures

International Nuclear Information System (INIS)

Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

2010-01-01

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Hydrogen-mediated Nitrogen Clustering in Dilute III-V Nitrides

Energy Technology Data Exchange (ETDEWEB)

Du, M.-H.; Limpijumnong, S.; Zhang, S. B

2006-01-01

First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H*{sub 2}(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H*{sub 2}(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

Hydrogen-Mediated Nitrogen Clustering in Dilute III-V Nitrides

Science.gov (United States)

Du, Mao-Hua; Limpijumnong, Sukit; Zhang, S. B.

2006-08-01

First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H2*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H2*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

Separation of uranium(V I) from binary solution mixtures with thorium(IV), zirconium(IV) and cerium(III) by foaming

International Nuclear Information System (INIS)

Shakir, K.; Aziz, M.; Benyamin, K.

1992-01-01

Foam separation has been investigated for the removal of uranium(V I), thorium(IV), zirconium(IV) and cerium(III) from dilute aqueous solutions at pH values ranging from about I to about II. Sodium laurel sulphate (Na L S) and acetyl trimethyl ammonium bromide (CTAB), being a strong anionic and a strong cationic surfactants, were used as collectors. The results indicate that Na L S can efficiently remove thorium(IV), zirconium(IV) and cerium(III) but not uranium(V I). CTAB, on the other hand, can successfully float only uranium(V I) and zirconium(IV). These differences in flotation properties of the different cations could be used to establish methods for the separation of uranium(V I) from binary mixtures with thorium(IV), zirconium(IV) or cerium(III). The results are discussed in terms of the hydrolytic behaviour of the tested cations and properties of used collectors.2 fig., 1 tab

Study of III-V semiconductor band structure by synchrotron photoemission

International Nuclear Information System (INIS)

Williams, G.P.; Cerrina, F.; Anderson, J.; Lapeyre, G.J.; Smith, R.J.; Hermanson, J.; Knapp, J.A.

1982-01-01

Angle-resolved synchrotron photoemission studies of six III-V semiconductors have been carried out. For emission normal to the (110) plane of these materials, peaks in the experimental spectra were identified with the bands involved in the transitions, and the critical point energies X 3 , X 5 , and Σ 1 /sup min/, were determined. The data indicate that k perpendicular is conserved in the transitions. Comparison of the data with theoretical bands permits an evaluation of k perpendicular associated with the experimentally observed transition, and from this information the bands were plotted out

Study of conformational changes and protein aggregation of bovine serum albumin in presence of Sb(III) and Sb(V).

Science.gov (United States)

Verdugo, Marcelo; Ruiz Encinar, Jorge; Costa-Fernández, José Manuel; Menendez-Miranda, Mario; Bouzas-Ramos, Diego; Bravo, Manuel; Quiroz, Waldo

2017-01-01

Antimony is a metalloid that affects biological functions in humans due to a mechanism still not understood. There is no doubt that the toxicity and physicochemical properties of Sb are strongly related with its chemical state. In this paper, the interaction between Sb(III) and Sb(V) with bovine serum albumin (BSA) was investigated in vitro by fluorescence spectroscopy, and circular dichroism (CD) under simulated physiological conditions. Moreover, the coupling of the separation technique, asymmetric flow field-flow fractionation, with elemental mass spectrometry to understand the interaction of Sb(V) and Sb(III) with the BSA was also used. Our results showed a different behaviour of Sb(III) vs. Sb(V) regarding their effects on the interaction with the BSA. The effects in terms of protein aggregates and conformational changes were higher in the presence of Sb(III) compared to Sb(V) which may explain the differences in toxicity between both Sb species in vivo. Obtained results demonstrated the protective effect of GSH that modifies the degree of interaction between the Sb species with BSA. Interestingly, in our experiments it was possible to detect an interaction between BSA and Sb species, which may be related with the presence of labile complex between the Sb and a protein for the first time.

Mixing of III-V compound semiconductor superlattices

International Nuclear Information System (INIS)

Mei, Ping.

1989-01-01

In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

Pulsed laser deposition of II-VI and III-V semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

1998-12-01

Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

Real-time RT-PCR high-resolution melting curve analysis and multiplex RT-PCR to detect and differentiate grapevine leafroll-associated associated virus 3 variant groups I, II, III and VI

Directory of Open Access Journals (Sweden)

Bester Rachelle

2012-09-01

Full Text Available Abstract Background Grapevine leafroll-associated virus 3 (GLRaV-3 is the main contributing agent of leafroll disease worldwide. Four of the six GLRaV-3 variant groups known have been found in South Africa, but their individual contribution to leafroll disease is unknown. In order to study the pathogenesis of leafroll disease, a sensitive and accurate diagnostic assay is required that can detect different variant groups of GLRaV-3. Methods In this study, a one-step real-time RT-PCR, followed by high-resolution melting (HRM curve analysis for the simultaneous detection and identification of GLRaV-3 variants of groups I, II, III and VI, was developed. A melting point confidence interval for each variant group was calculated to include at least 90% of all melting points observed. A multiplex RT-PCR protocol was developed to these four variant groups in order to assess the efficacy of the real-time RT-PCR HRM assay. Results A universal primer set for GLRaV-3 targeting the heat shock protein 70 homologue (Hsp70h gene of GLRaV-3 was designed that is able to detect GLRaV-3 variant groups I, II, III and VI and differentiate between them with high-resolution melting curve analysis. The real-time RT-PCR HRM and the multiplex RT-PCR were optimized using 121 GLRaV-3 positive samples. Due to a considerable variation in melting profile observed within each GLRaV-3 group, a confidence interval of above 90% was calculated for each variant group, based on the range and distribution of melting points. The intervals of groups I and II could not be distinguished and a 95% joint confidence interval was calculated for simultaneous detection of group I and II variants. An additional primer pair targeting GLRaV-3 ORF1a was developed that can be used in a subsequent real-time RT-PCR HRM to differentiate between variants of groups I and II. Additionally, the multiplex RT-PCR successfully validated 94.64% of the infections detected with the real-time RT-PCR HRM

Expression of group III metabotropic glutamate receptors in the reproductive system of male mice.

Science.gov (United States)

Marciniak, Marcin; Chruścicka, Barbara; Lech, Tomasz; Burnat, Grzegorz; Pilc, Andrzej

2016-03-01

Although the presence of metabotropic glutamate (mGlu) receptors in the central nervous system is well documented, they have recently been found in peripheral and non-neuronal tissues. In the present study we investigated the expression of group III mGlu receptors in the reproductive system of male mice. Reverse transcription-polymerase chain reaction analysis revealed the presence of mGlu6, mGlu7 and mGlu8 (but not mGlu4) receptor transcripts in testes and epididymides from adult mice. In addition, expression of mGlu6 (Grm6) and mGlu8 receptor (Grm8) mRNA was detected in spermatozoa isolated from the vas deferens. The vas deferens was found to contain only mGlu7 receptor (Grm7) mRNA, which was particularly intense in 21-day-old male mice. In penile homogenates, only the mGlu7 receptor signal was detected. Genetic ablation of the mGlu7 receptor in males led to fertility disorders manifested by decreased insemination capability as well as deterioration of sperm parameters, particularly sperm motility, vitality, sperm membrane integrity and morphology, with a simultaneous increase in sperm concentration. These results indicate that constitutively expressed mGlu receptors in the male reproductive system may play an important role in ejaculation and/or erection processes, as well as in the formation and maturation of spermatozoa.

Effect of Planting Date and Maturity Group on Soybean Yield Response to Injury by Megacopta cribraria (Hemiptera: Plataspidae).

Science.gov (United States)

Blount, J L; Buntin, G D; Roberts, P M

2016-02-01

The kudzu bug, Megacopta cribraria (F.), is an invasive member of the family Plataspidae originating from Asia. Since its discovery in Georgia in 2009, its distribution has increased to 13 southern and eastern states. In the United States, M. cribraria is bivoltine and has two primary developmental hosts, kudzu and soybean. Here, we evaluated the yield response of soybean to M. cribraria feeding injury in relation to planting date and soybean maturity group. The study contained four replicated trials in Griffin, Tifton, and Midville, GA, in 2012 and 2013. Four planting dates from April to July, served as the whole plot of a split-plot design with maturity group five and seven soybean and insecticide (lambda-cyhalothrin) randomized within planting date. Egg masses, nymphs, and adults were enumerated weekly to biweekly until soybean reached maturity. Two generations were observed in April and May plantings, but only one generation was evident in June and July soybean plantings. Insecticide-protected plots had consistently higher yields than unprotected plots. Grain yield was greatest in the May planting and lowest in the July planting. Season-long feeding by M. cribraria reduced grain yield in April, May, and June plantings but not in the July planting. Maturity group and planting date had significant effects on yield components in most comparisons. This study indicated that early-planted soybean are at greater risk of yield loss from M. cribraria injury compared with later-planted soybean. © The Authors 2015. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Outbreeding lethality between toxic Group I and nontoxic Group III Alexandrium tamarense spp. isolates: Predominance of heterotypic encystment and implications for mating interactions and biogeography

Science.gov (United States)

Brosnahan, Michael L.; Kulis, David M.; Solow, Andrew R.; Erdner, Deana L.; Percy, Linda; Lewis, Jane; Anderson, Donald M.

2010-02-01

We report the zygotic encystment of geographically dispersed isolates in the dinoflagellate species complex Alexandrium tamarense, in particular, successful mating of toxic Group I and nontoxic Group III isolates. However, hypnozygotes produced in Group I/III co-cultures complete no more than three divisions after germinating. Previous reports have suggested a mate recognition mechanism whereby hypnozygotes produced in co-cultures could arise from either homotypic (inbred) or heterotypic (outbred) gamete pairs. To determine the extent to which each occurs, a nested PCR assay was developed to determine parentage of individual hypnozygotes. The vast majority of hypnozygotes from pairwise Group I/III co-cultures were outbred, so that inviability was a result of hybridization, not inbreeding. These findings support the assertion that complete speciation underlies the phylogenetic structure of the Alexandrium tamarense species complex. Additionally, the ribosomal DNA (rDNA) copy numbers of both hybrid and single ribotype hypnozygotes were reduced substantially from those of haploid motile cells. The destruction of rDNA loci may be crucial for the successful mating of genetically distant conjugants and appears integral to the process of encystment. The inviability of Group I/III hybrids is important for public health because the presence of hybrid cysts may indicate ongoing displacement of a nontoxic population by a toxic one (or vice versa). Hybrid inviability also suggests a bloom control strategy whereby persistent, toxic Group I blooms could be mitigated by introduction of nontoxic Group III cells. The potential for hybridization in nature was investigated by applying the nested PCR assay to hypnozygotes from Belfast Lough, Northern Ireland, a region where Group I and III populations co-occur. Two hybrid cysts were identified in 14 successful assays, demonstrating that Group I and III populations do interbreed in that region. However, an analysis of mating data

Coconut water of different maturity stages ameliorates inflammatory processes in model of inflammation

Science.gov (United States)

Rao, Sadia Saleem; Najam, Rahila

2016-01-01

Aim: Coconut water is a natural beverage that is a part of daily diet of many people. This study was designed to explore the anti-inflammatory activity of coconut water of different maturation stages (young and mature) with rat paw edema model of inflammation using plethysmometer. Methodology: For this study, albino rats were selected and divided into four equal groups (10 rats in each group). Group 1 was set as control and administered distilled water 1 ml orally; Groups 2 and 3 were treated with young and mature coconut water, respectively, at 4 ml/100 g dose orally. Group 4 was treated with the standard drug (ibuprofen) at 400 mg/70 kg. 0.1 ml of 1% w/v acetic acid was administered in the subplantar tissue of rat paw 30 min after oral treatments of groups. Plethysmometer was used to measure rat paw edema. Results: Results revealed that both coconut water possess significant anti-inflammatory activity (P coconut water was 20.22%, 35.13%, 42.52%, and 36% at 1, 2, 3, and 4 h of acetic acid administration, respectively. However, maximum percent inhibition (42.52%) was observed in the second phase of the inflammatory process. On the other hand, percent inhibition by mature coconut water was 18.80%, 25.94%, 24.13%, and 18.66% at 1, 2, 3, and 4 h of acetic acid administration, respectively. However, maximum percent inhibition (25.94%) was observed in the first phase of the inflammatory process. Conclusions: This study strongly suggests the use of young coconut water for potent anti-inflammatory effect and mature coconut water for moderate anti-inflammatory effect. PMID:27366350

NEW THIO S2- ADDUCTS WITH ANTIMONY (III AND V HALIDE: SYNTHESIS AND INFRARED STUDY

Directory of Open Access Journals (Sweden)

HASSAN ALLOUCH

2013-12-01

Full Text Available Five new S2- adducts with SbIII and SbV halides have been synthesized and studied by infrared. Discrete structures have been suggested, the environment around the antimony being tetrahedral, trigonal bipyramidal or octahedral.

Determination of the solubility of Np(IV), Pu(III) - (VI),Am(III) - (VI), and Te(IV), (V) hydroxo compounds in 0.5 - 14 M NaOH solutions

Energy Technology Data Exchange (ETDEWEB)

Delegard, C.H.

1996-09-24

The solubilities of Am(III), Np(IV), Pu(IV), Tc(IV), Np(V), Pu(V), Am(V), and Tc(V) hydroxo compounds were studied in 0.5 to 14 M NaOH solutions at 25{+-}2 {degrees}C. The effects of fluoride, phosphate, carbonate, oxalate, and some other organic complexing agents on the solubilities of Np(IV), Pu(IV), and TC(IV) hydroxides were investigated at 1.0 and 4.0 M NAOH. Some predictions were made on the dissolved (I.V) and (V) species present in alkali solutions.

Anomalous microstructural changes in III-nitrides under ion bombardment

International Nuclear Information System (INIS)

Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

2002-01-01

Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

Mature Results of a Prospective Randomized Trial Comparing 5-Flourouracil with Leucovorin to 5-Flourouracil with Levamisole as Adjuvant Therapy of Stage II and III Colorectal Cancer- The Israel Cooperative Oncology Group (ICOG Study

Directory of Open Access Journals (Sweden)

Arie Figer, Aviram Nissan, Adi Shani, Riva Borovick, Mariana Stiener, Mario Baras, Herbert R. Freund, Aaron Sulkes, Alexander Stojadinovic, Tamar Peretz

2011-01-01

Full Text Available Objective: Survival benefit with adjuvant therapy was shown in patients with Stage III colorectal cancer (CRC. This study evaluates long-term (10-year outcome in patients with CRC randomly assigned to adjuvant 5-Fluorouracil/Leucovorin (5FU+LV or 5-FU/Levamisole (5FU+LEV.Methods: Between 1990 and 1995, 398 patients with curatively resected Stage II-III CRC were randomly assigned to adjuvant 5FU+LV or 5FU+LEV for 12 months.Results: No difference was evident in 10-year relapse-free or overall survival between study groups. Grade III toxicity was similar between groups; however, neurotoxicity was significantly greater with 5FU+LEV (p=0.02 and gastrointestinal toxicity with 5FU+LV (p=0.03. Female patients treated with 5FU+LEV had improved overall survival.Conclusions: Adjuvant treatment of CRC is still based on leucovorin modulated fluorouracil. The long-term follow-up results of this trial indicate that the adjuvant treatment of Stage II-III CRC with 5FU+LV or 5FU+LEV is equally effective. The finding of improved survival in female subjects treated with 5FU+LEV warrants further study to determine if Levamisole is a better modulator of 5-FU than Leucovorin in this patient subset.

Isolation: analysis and properties of three bradykinin-potentiating peptides (BPP-II, BPP-III, and BPP-V) from Bothrops neuwiedi venom.

Science.gov (United States)

Ferreira, L A; Galle, A; Raida, M; Schrader, M; Lebrun, I; Habermehl, G

1998-04-01

In the course of systematic investigations on low-molecular-weight compounds from the venom of Crotalidae and Viperidae, we have isolated and characterized at least three bradykinin-potentiating peptides (BPP-II, BPP-III, and BPP-V) from Bothrops neuwiedi venom by gel filtration on Sephadex G-25 M, Sephadex G-10 followed by HPLC. The peptides showed bradykinin-potentiating action on isolated guinea-pig ileum, for which the BPP-V was more active than of BPP-II, and BPP-III, rat arterial blood pressure, and a relevant angiotensin-converting enzyme (ACE) competitive inhibiting activity. The kinetic studies showed a Ki of the order of 9.7 x 10(-3) microM to BPP-II, 7 x 10(-3) microM to BPP-III, and 3.3 x 10(-3) microM to BPP-V. The amino acid sequence of the BPP-III has been determined to be pGlu-Gly-Gly-Trp-Pro-Arg-Pro-Gly-Pro-Glu-Ile-Pro-Pro, and the amino acid compositions of the BPP-II and BPP-V by amino acid analysis were 2Glu-2Gly-1Arg-4Pro-1Ile and 2Glu-2Gly-1Ser-3Pro-2Val-1Ile, with molecular weight of 1372, 1046, and 1078, respectively.

Toxicity of arsenic (III) and (V) on plant growth, element uptake, and total amylolytic activity of mesquite (Prosopis juliflora x P. velutina).

Science.gov (United States)

Mokgalaka-Matlala, Ntebogeng S; Flores-Tavizón, Edith; Castillo-Michel, Hiram; Peralta-Videa, Jose R; Gardea-Torresdey, Jorge L

2008-01-01

The effects of arsenite [As(III)] and arsenate [As(V)] on the growth of roots, stems, and leaves and the uptake of arsenic (As), micro- and macronutrients, and total amylolytic activity were investigated to elucidate the phytotoxicity of As to the mesquite plant (Prosopis juliflora x P. velutina). The plant growth was evaluated by measuring the root and shoot length, and the element uptake was determined using inductively coupled plasma optical emission spectroscopy. The root and leaf elongation decreased significantly with increasing As(III) and As(V) concentrations; whereas, stem elongation remained unchanged. The As uptake increased with increasing As(III) or As(V) concentrations in the medium. Plants treated with 50 mg/L As(III) accumulated up to 920 mg/kg dry weight (d wt) in roots and 522 mg/kg d wt in leaves, while plants exposed to 50 mg/L As(V) accumulated 1980 and 210 mg/kg d wt in roots and leaves, respectively. Increasing the As(V) concentration up to 20 mg/L resulted in a decrease in the total amylolytic activity. On the contrary, total amylolytic activity in As(III)-treated plants increased with increasing As concentration up to 20 mg/L. The macro- and micronutrient concentrations changed in As-treated plants. In shoots, Mo and K were reduced but Ca was increased, while in roots Fe and Ca were increased but K was reduced. These changes reduced the size of the plants, mainly in the As(III)-treated plants; however, there were no visible sign of As toxicity.

[Study on the difference of corresponding age at cervical vertebral maturation stages among different skeletal malocclusions].

Science.gov (United States)

Zuo, Changyan; Cong, Chao; Wang, Shihui; Gu, Yan

2015-10-01

To compare the difference of corresponding age at cervical vertebral maturation (CVM) stages among different skeletal malocclusions and provide clinic guideline on optimal treatment timing for skeletal malocclusion. Based on ANB angle, 2 575 cephalograms collected from Department of Orthodontics, Peking University School and Hospital of Stomatology from May, 2006 to November, 2014 were classified into skeletal Class I (ANB 0°~5°, 1 317 subjects), Class II (ANB > 5°, 685 subjects) and Class III (ANB < 0°, 573 subjects) groups. CVM stages were evaluated with the modified version of CVM method. Independent sample t test was performed to analyze the difference of age at different CVM stages among various skeletal groups. Significant gender difference of age was found at CS3 to CS6 for skeletal Class I group (P < 0.05), at CS5 and CS6 for skeletal Class II group (P < 0.05), and at CS3 and CS5 for skeletal Class III group (P < 0.05). At CS3 stage, the average age of male in skeletal Class II and skeletal Class III groups was (11.6 ± 1.5) years old and (10.3 ± 1.9) years old, respectively; the average age of females in those two groups was (11.7 ± 1.3) years old and (9.3 ± 1.5) years old, respectively, and significant difference was found in both comparisons (P < 0.05). Compared average age at CS5 and CS6 between skeletal Class II and skeletal Class III groups [the ages of male was (15.1 ± 1.7) and (16.8 ± 1.6) years old, the ages of male was (14.6 ± 1.2) and (15.7 ± 2.5) years old], significant difference was also found (P < 0.05). Significant gender differences were found when evaluated CVM stage and age in skeletal Class I, II and III groups. Significant differences of age at different CVM stage was noted when skeletal Class II was compared with skeletal Class III groups.

Method to grow group III-nitrides on copper using passivation layers

Science.gov (United States)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

2014-06-03

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Correlation between Dental Maturity by Demirjian Method and Skeletal Maturity by Cervical Vertebral Maturity Method using Panoramic Radiograph and Lateral Cephalogram

Directory of Open Access Journals (Sweden)

Madhusudhanan Mallika Mini

2017-01-01

Full Text Available Introduction: Radiographs are effective tools in assessing the stages of bone maturation in dentistry. The cervical vertebral maturation method is a proven effective tool in assessing the adolescent growth spurt than hand-wrist radiographs in an individual. Assessment of dental calcification stages are a reliable method for determining dental maturity. Panoramic imaging can be used as the primary imaging modality for assessing maturity if a correlation can be found out between tooth calcification stages and cervical vertebral maturation stages. This study was conducted to determine the correlation between dental maturity stage and cervical vertebral maturity stage and to estimate predictor variables for cervical vertebral maturation stages (CVMS stratified by gender in a tertiary hospital setting. Materials and Methods: A descriptive study was conducted among patients accessing orthodontic care in radiology outpatient clinic, Oral Medicine and Radiology department, Government Dental College Thiruvananthapuram for a period of 15 months. Participants were selected between the ages of 8 and 16 years. Panoramic radiographs and lateral cephalograms were used to determine dental maturity stages using Demirjian method and CVMS using Bacetti and Franchi method, respectively. Results: One hundred patients (males = 46, females = 54 were included in the study; the spearman rank order correlation revealed significant relationship. The correlation ranged from 0.61 to 0.74 for females and 0.48 to 0.51 for males. Second premolar showed highest correlation and canine the lowest for both females and males. Stage G of mandibular second premolar signifies the pubertal growth period in this study population. By ordinal regression model, G stage of second premolar was found to be a significant predictor in males and stage H followed by G and F in females for the age group of 12–14 years. Conclusion: Dental maturation stages were significantly correlated with CVMS

The Effective Dynamic Ranges for Glaucomatous Visual Field Progression With Standard Automated Perimetry and Stimulus Sizes III and V.

Science.gov (United States)

Wall, Michael; Zamba, Gideon K D; Artes, Paul H

2018-01-01

It has been shown that threshold estimates below approximately 20 dB have little effect on the ability to detect visual field progression in glaucoma. We aimed to compare stimulus size V to stimulus size III, in areas of visual damage, to confirm these findings by using (1) a different dataset, (2) different techniques of progression analysis, and (3) an analysis to evaluate the effect of censoring on mean deviation (MD). In the Iowa Variability in Perimetry Study, 120 glaucoma subjects were tested every 6 months for 4 years with size III SITA Standard and size V Full Threshold. Progression was determined with three complementary techniques: pointwise linear regression (PLR), permutation of PLR, and linear regression of the MD index. All analyses were repeated on "censored'' datasets in which threshold estimates below a given criterion value were set to equal the criterion value. Our analyses confirmed previous observations that threshold estimates below 20 dB contribute much less to visual field progression than estimates above this range. These findings were broadly similar with stimulus sizes III and V. Censoring of threshold values < 20 dB has relatively little impact on the rates of visual field progression in patients with mild to moderate glaucoma. Size V, which has lower retest variability, performs at least as well as size III for longitudinal glaucoma progression analysis and appears to have a larger useful dynamic range owing to the upper sensitivity limit being higher.

Pressure-induced structural change of liquid InAs and the systematics of liquid III-V compounds

International Nuclear Information System (INIS)

Hattori, T.; Tsuji, K.; Miyata, Y.; Sugahara, T.; Shimojo, F.

2007-01-01

To understand the pressure-induced structural changes of liquid III-V compounds systematically, the pressure dependence of l-InAs was investigated using the synchrotron x-ray diffraction and an ab initio molecular-dynamics simulation (AIMD). The x-ray diffraction experiments revealed that the liquid changes its compression behavior from a nearly uniform type to a nonuniform one around 9 GPa. Corresponding to this change, the coordination number (China), which is maintained up to 9 GPa, markedly increases from 6.0 to 7.5. The AIMD simulation revealed that this change is related to the change in the pressure dependence of all three pair correlations. In particular, a marked change is observed in the As-As correlation; in the low-pressure region, the position of the first peak in g AsAs (r), r AsAs , increases while maintaining the CN AsAs , but in the high-pressure region, the r AsAs stops increasing and the CN AsAs begins to increase. The AIMD simulation also revealed that each partial structure of l-InAs is similar to that for the pure-element liquid with the same valence electron number. Upon compression, each partial structure approaches the respective one for a heavier element in the same group. These findings suggest that the structures of liquid compounds are locally controlled by the number of the valence electrons in each ion pair and that the change in each partial structure obeys the empirical rule that the high-pressure state resembles the ambient state of a heavier element in the same group. Comparing the pressure-induced structural change of l-InAs to those of other liquid III-V compounds (GaSb and InSb) has revealed that, although the high-pressure behaviors of these three liquids are apparently different, their structural changes are systematically understood by a common structural sequence. This systematics originates from the same effect on each partial structure between increasing the atomic number and the pressurization

Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

International Nuclear Information System (INIS)

Bietti, S; Somaschini, C; Sanguinetti, S; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

2010-01-01

We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

Observation of electron polarization above 80% in photoemission from strained III-V compounds

International Nuclear Information System (INIS)

Garwin, E.L.; Maruyama, T.; Prepost, R.; Zapalac, G.H.

1992-02-01

Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In x Ga 1-x As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs 1-x P x buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed

Zinc and group V element co-implantation in indium phosphide

International Nuclear Information System (INIS)

Yu, Kin Man; Ridgway, M.C.

2000-01-01

Group V elements with mass ranging from 35 to 122 amu have been co-implanted with Zn in InP substrates. Co-implantation with all group V elements drastically reduced Zn out-diffusion and to a certain extent also inhibited Zn in-diffusion. The reduction in out-diffusion was insensitive to the group V element mass and thus, to implantation-induced damage. We believe the group V element excess created an In-vacancy excess that enhanced Zn substitution into the In sublattice. A maximum hole concentration of 7x10 18 cm -3 was achieved with P co-implantation. Electrochemical capacitance-voltage profiling clearly showed a decrease in hole concentration as a function of increasing group V element mass. This was attributed to differences in compensating residual implantation-induced damage

New Insights into the genetic diversity of Clostridium botulinum Group III through extensive genome exploration

Directory of Open Access Journals (Sweden)

Cédric eWoudstra

2016-05-01

Full Text Available Animal botulism is caused by group III Clostridium botulinum strains producing type C and D toxins, or their chimeric forms C/D and D/C. Animal botulism is considered an emerging disease in Europe, notably in poultry production. Before our study, 14 genomes from different countries were available in the public database, but none were from France. In order to investigate the genetic relationship of French strains with different geographical areas and find new potential typing targets, 17 strains of C. botulinum group III were sequenced (16 from France and one from New Caledonia. Fourteen were type C/D strains isolated from chickens, ducks, guinea fowl and turkeys and three were type D/C strains isolated from cattle. The New Caledonian strain was a type D/C strain. Whole genome sequence analysis showed the French strains to be closely related to European strains from C. botulinum group III lineages Ia and Ib. The investigation of CRISPR sequences as genetic targets for differentiating strains in group III proved to be irrelevant for type C/D due to a deficient CRISPR/Cas mechanism, but not for type D/C. Conversely, the extrachromosomal elements of type C/D strains could be used to generate a genetic ID card. The highest level of discrimination was achieved with SNP core phylogeny, which allowed differentiation up to strain level and provide the most relevant information for genetic epidemiology studies and discrimination.

Farmakologisk behandling af præmatur ejakulation

DEFF Research Database (Denmark)

Kuhlmann, Ida Berglund; Hedegaard, Ulla; Christensen, Mette Marie H

2017-01-01

Forfatterne anbefaler lokalanæstesi med lidokain og/eller prilokain som førstevalg. Andet valg til behandling vil være dapoxetin, som er en korttidsvirkende SSRI med indikationen præmatur ejakulation. Som tredje valg kan overvejes SSRI'et sertralin......Forfatterne anbefaler lokalanæstesi med lidokain og/eller prilokain som førstevalg. Andet valg til behandling vil være dapoxetin, som er en korttidsvirkende SSRI med indikationen præmatur ejakulation. Som tredje valg kan overvejes SSRI'et sertralin...

Tunable electronic and magnetic properties in germanene by alkali, alkaline-earth, group III and 3d transition metal atom adsorption.

Science.gov (United States)

Li, Sheng-shi; Zhang, Chang-wen; Ji, Wei-xiao; Li, Feng; Wang, Pei-ji; Hu, Shu-jun; Yan, Shi-shen; Liu, Yu-shen

2014-08-14

We performed first-principles calculations to study the adsorption characteristics of alkali, alkali-earth, group III, and 3d transition-metal (TM) adatoms on germanene. We find that the adsorption of alkali or alkali-earth adatoms on germanene has minimal effects on geometry of germanene. The significant charge transfer from alkali adatoms to germanene leads to metallization of germanene, whereas alkali-earth adatom adsorption, whose interaction is a mixture of ionic and covalent, results in semiconducting behavior with an energy gap of 17-29 meV. For group III adatoms, they also bind germanene with mixed covalent and ionic bonding character. Adsorption characteristics of the transition metals (TMs) are rather complicated, though all TM adsorptions on germanene exhibit strong covalent bonding with germanene. The main contributions to the strong bonding are from the hybridization between the TM 3d and Ge pz orbitals. Depending on the induced-TM type, the adsorbed systems can exhibit metallic, half-metallic, or semiconducting behavior. Also, the variation trends of the dipole moment and work function with the adsorption energy across the different adatoms are discussed. These findings may provide a potential avenue to design new germanene-based devices in nanoelectronics.

Diversity of the Germination Apparatus in Clostridium botulinum Groups I, II, III and IV

Directory of Open Access Journals (Sweden)

Jason Brunt

2016-10-01

Full Text Available Clostridium botulinum is a highly dangerous pathogen that forms very resistant endospores that are ubiquitous in the environment, and which, under favourable conditions germinate to produce vegetative cells that multiply and form the exceptionally potent botulinum neurotoxin. To improve the control of botulinum neurotoxin-forming clostridia, it is important to understand the mechanisms involved in spore germination. Here we present models for spore germination in C. botulinum based on comparative genomics analyses, with C. botulinum Groups I and III sharing similar pathways, which differ from those proposed for C. botulinum Groups II and IV. All spores germinate in response to amino acids interacting with a germinant receptor, with four types of germinant receptor identified (encoded by various combinations of gerA, gerB and gerC genes (gerX. There are three gene clusters with an ABC-like configuration; ABC gerX1, ABABCB gerX2 and ACxBBB gerX4, and a single CA-B gerX3 gene cluster. Subtypes have been identified for most germinant receptors types, and the individual GerX subunits of each cluster show similar grouping in phylogenetic trees. C. botulinum Group I contained the largest variety of gerX subtypes, with three gerX1, three gerX2 and one gerX3 subtypes, while C. botulinum Group III contained two gerX1 types and one gerX4. C. botulinum Groups II and IV contained a single germinant receptor, gerX3 and gerX1, respectively. It is likely that all four C. botulinum Groups include a SpoVA channel involved in DPA release. The cortex lytic enzymes present in C. botulinum Groups I and III appear to be CwlJ and SleB, while in C. botulinum Groups II and IV, SleC appears to be important.

Intramolecular electron transfer through a bridging carboxylate group coordinated to two cobalt(III)-ions

International Nuclear Information System (INIS)

Wieghardt, K.

1978-01-01

Reduction of the binuclear μ-p-nitrobenzoato -di-μ-hydroxo -bis[triammine cobalt(III)] cation with (CH 3 ) 2 COH radicals yields a radical cation with the p-nitrobenzoato radical being coordinated to two cobalt(III) ions at the carboxylic group. The unprotonated form of this species undergoes intramolecular electron transfer producing Co(II) (k = (3.3 +- 0.3). x 10 3 s -1 ). The role of the carboxylate group in the intramolecular electron transfer process is tentatively assessed in terms of an intramolecular outer-sphere reaction because of lack of overlap of the donor orbitals (π) and the acceptor orbital (sigma). The protonated form of the radical cation (pKsub(a) = 2.5) disproportionates via a bimolecular process without production of Co(II). The effect of two coordinated Co(III) ions as compared to only one on the properties of the nitrobenzoate radical anion are discussed. (orig.) 891 HK 892 GM [de

Relationship between cervical vertebral maturation and mandibular growth.

Science.gov (United States)

Ball, Gina; Woodside, Donald; Tompson, Bryan; Hunter, W Stuart; Posluns, James

2011-05-01

The cervical vertebrae have been proposed as a method of determining biologic maturity. The purposes of this study were to establish a pattern of mandibular growth and to relate this pattern to the stages of cervical vertebral maturation. Cephalometric radiographs, taken annually from ages 9 to 18 years, were evaluated for 90 boys from the Burlington Growth Center, Toronto, Ontario, Canada. Mandibular lengths were measured from articulare to gnathion, and incremental growth was determined. Cervical vertebral maturation stages were assessed by using a 6-stage method. Advanced, average, and delayed maturation groups were established. The prepubertal mandibular growth minimum velocity occurred during cervical stages 1 through 4 (P = 0.7327). Peak mandibular growth velocity occurred most frequently during stage 4 in all 3 maturation groups, with a statistical difference in the average and delayed groups (P cervical stages 1 through 6 does not occur annually; time spent in each stage varies depending on the stage and the maturation group. Cervical vertebral maturation stages cannot accurately identify the mandibular prepubertal growth minimum and therefore cannot predict the onset of the peak in mandibular growth. The cervical vertebral maturation stages should be used with other methods of biologic maturity assessment when considering both dentofacial orthopedic treatment and orthognathic surgery. Copyright © 2011 American Association of Orthodontists. Published by Mosby, Inc. All rights reserved.

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Duration of the pubertal peak in skeletal Class I and Class III subjects.

Science.gov (United States)

Kuc-Michalska, Małgorzata; Baccetti, Tiziano

2010-01-01

To estimate and compare the duration of the pubertal growth peak in Class I and Class III subjects. The data examined consisted of pretreatment lateral cephalometric records of 218 skeletal Class I or Class III subjects (93 female and 125 male subjects) of white ancestry. The duration of the pubertal peak was calculated from the average chronological age intervals between stages CS3 and CS4 of the cervical vertebral maturation in Class I vs Class III groups (t-test). In skeletal Class I subjects, the pubertal peak had a mean duration of 11 months, whereas in Class III subjects it lasted 16 months. The average difference (5 months) was statistically significant (P < .001). The growth interval corresponding to the pubertal growth spurt (CS3-CS4) was longer in Class III subjects than in subjects with normal skeletal relationships; the larger increases in mandibular length during the pubertal peak reported in the literature for Class III subjects may be related to the longer duration of the pubertal peak.

Long-term outcomes of Class III treatment with mandibular cervical headgear followed by fixed appliances.

Science.gov (United States)

Baccetti, Tiziano; Rey, Diego; Oberti, Giovanni; Stahl, Franka; McNamara, James A

2009-09-01

To evaluate the stability of the outcomes of mandibular cervical headgear (MCH) and fixed appliance-treated Class III patients at a long-term posttreatment (5 years) observation, compared with well-matched untreated Class III controls, following a previous report on the short-term outcomes of this protocol. The treated group consisted of 20 patients with dentoskeletal Class III malocclusions treated with a two-phase protocol consisting of MCH and fixed appliances, while the control group comprised 18 untreated subjects with similar dentoskeletal Class III malocclusion. Lateral cephalograms of both patients and controls were analyzed at two time points: posttreatment (PT), after two-phase treatment; and long term (LT). All patients were at a postpubertal stage of skeletal maturity at PT, and they showed CS6 at LT, thus revealing completion of pubertal craniofacial growth. In the long term, the treatment group showed significantly smaller values for mandibular length (Co-Gn), SNB angle, maxillomandibular differential, and molar relation. When compared with the controls, the treated patients exhibited also greater values for ANB angle, Wits appraisal, and overjet at LT. No significant difference between the two groups was found for the changes occurring from PT to LT. Favorable dentoskeletal outcomes induced by MCH and fixed appliances remained stable in the long term; untreated Class III malocclusion did not show any tendency toward self-improvement during the postpubertal interval.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

Science.gov (United States)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

HEXAGA-III-120, -30. Three dimensional multi-group neutron diffusion programmes for a uniform triangular mesh with arbitrary group scattering

International Nuclear Information System (INIS)

Woznicki, Z.I.

1983-07-01

This report presents the HEXAGA-III-programme solving multi-group time-independent real and/or adjoint neutron diffusion equations for three-dimensional-triangular-z-geometry. The method of solution is based on the AGA two-sweep iterative method belonging to the family of factorization techniques. An arbitrary neutron scattering model is permitted. The report written for users provides the description of the programme input and output and the use of HEXAGA-III is illustrated by a sample reactor problem. (orig.) [de

Treatment and posttreatment effects of mandibular cervical headgear followed by fixed appliances in Class III malocclusion.

Science.gov (United States)

Rey, Diego; Angel, David; Oberti, Giovanni; Baccetti, Tiziano

2008-03-01

In this cephalometric investigation, we compared the treatment and posttreatment effects on patients undergoing an initial phase of mandibular cervical headgear (MCH) therapy followed later by comprehensive edgewise therapy with untreated Class III controls. The treated sample consisted of 21 patients treated consecutively with MCH before the pubertal growth spurt (average age, 10 years 2 months at the beginning of treatment). At the final observation period (average age, 15 years 3 months), all patients were in decelerative growth phases as determined by the cervical vertebral maturation method. Active treatment and posttreatment effects were evaluated in the treated group with nonparametric statistical analysis for paired samples. The treated sample was compared with a nonparametric statistical test for independent samples with 20 untreated Class III subjects who were matched for malocclusion, sex, and stage of cervical vertebral maturation to the treatment group. MCH therapy followed by fixed appliances was shown to be an effective treatment for the correction of skeletal Class III malocclusion at postpubertal observation. The favorable skeletal effects consisted mainly of smaller increases in mandibular length and advancement with respect to the controls, with the final outcome of significant improvements in the sagittal skeletal (+4 mm for the Wits appraisal) and dental (+2.7 mm for overjet, -4.4 mm for molar relationship) parameters. This treatment protocol also induced significant downward rotation of the mandible (2.8 degrees ).

Acousto-optic modulation of III-V semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

1996-01-01

We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

Determination of As(III and As(V in waters by chronopotentiometric stripping analysis

Directory of Open Access Journals (Sweden)

Švarc-Gajić Jaroslava V.

2006-01-01

Full Text Available Arsenic is a naturally occurring toxic and carcinogenic element. The degree of the toxicity depends on its chemical form and the concentration. Application of a sensitive, selective, simple and rapid method for detection and monitoring of different oxidation states of arsenic in waters is of great importance because main route of population exposure is through drinking water. In this work chronopotentiometric stripping analysis (CSA was used for the determination of As(III and As(V in tap, well, river and rain waters from Vojvodina (Serbia. Gold film electrode on the glassy carbon support was used as the working electrode. The experimental parameters of the technique were investigated and optimized. Detection limit of the method for the electrolysis time of 600 s was 2 μg/dm3 of As(III.

Stability Parameters for Grain Yield and its Component Traits in Maize Hybrids of Different FAO Maturity Groups

Directory of Open Access Journals (Sweden)

Dragan Djurovic

2014-12-01

Full Text Available An objective evaluation of maize hybrids in intensive cropping systems requires identification not only of yield components and other agronomically important traits but also of stability parameters. Grain yield and its components were assessed in 11 maize hybrids with different lengths of growing season (FAO 300-700 maturity groups using analysis of variance and regression analysis at three different locations in Western Serbia. The test hybrids and locations showed significant differences in grain yield, grain moisture content at maturity, 1,000-kernel weight and ear length. A significant interaction was observed between all traits and the environment. The hybrids with higher mean values of the traits, regardless of maturity group, generally exhibited sensitivity i.e. adaptation to more favourable environmental conditions as compared to those having lower mean values. Regression coefficient (bi values for grain yield mostly suggested no significant differences relative to the mean. The medium-season hybrid gave high yields and less favourable values of stability parameters at most locations and in most years, as compared to mediumlate hybrids. As compared to medium-early hybrids, medium-late hybrids (FAO 600 and 700 mostly exhibited unfavourable values of stability parameters i.e. a specific response and better adaptation to favourable environmental conditions, and gave higher average yields. Apart from producing lower average yields, FAO 300 and 400 hybrids showed higher yield stability as compared to the other hybrids tested. Medium-late hybrids had higher yields and showed a better response to favourable environmental conditions compared to early-maturing hybrids. Therefore, they can be recommended for intensive cultural practices and low-stress environments. Due to their more favourable stability parameter values, medium-early hybrids can be recommended for low-intensity cultural practices and stressful environments.

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Assessment of skeletal maturation with permanent mandibular second molar calcification stages among a group of Nepalese orthodontic patients

Directory of Open Access Journals (Sweden)

Giri J

2016-03-01

Full Text Available Jamal Giri,1 Basanta Kumar Shrestha,2 Rajiv Yadav,2 Tika Ram Ghimire21Department of Orthodontics, BP Koirala Institute of Health Sciences, Dharan, 2Department of Dentistry, Institute of Medicine, Kathmandu, Nepal Background: Assessment of growth status of a patient is a key component in orthodontic diagnosis and treatment planning for growing patients with skeletal discrepancy. Skeletal maturation based on hand-wrist radiograph and cervical vertebral maturation (CVM are commonly used methods of growth assessment. Studies have shown that stages of dental calcification can also be used to assess skeletal maturation status of an individual, whereas other studies have suggested that the relationship between dental calcification and skeletal maturation should be interpreted with caution owing to racial variation. Objective: To evaluate the relationship between permanent mandibular second molar calcification stages and skeletal maturity assessed by CVM among a group of Nepalese orthodontic patients. Materials and methods: One hundred and sixty-eight digital radiographs (84 orthopantomograms and 84 lateral cephalograms were obtained from the records of 84 patients who sought orthodontic treatment in Orthodontic and Dentofacial Orthopaedic Unit, Department of Dentistry, Institute of Medicine, Kathmandu. Two parameters were used in this study, namely, CVM stages from lateral cephalogram and Demirjian index (DI stages from orthopantomogram. The evaluation of digital radiographs was carried out on a computer screen with a resolution of 1,280×800 pixels. The association between DI stages of permanent mandibular second molar and CVM stages was assessed. Results: A statistically significant association was found between DI and CVM stages for both male and female subjects with Pearson's contingency coefficient value of 0.751 and 0.766 for male and female subjects, respectively. Conclusion: Skeletal maturation can be reliably assessed with dental calcification

On the use of the plasma in III-V semiconductor processing

Energy Technology Data Exchange (ETDEWEB)

Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

1996-03-01

The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

Human Retroviruses and AIDS. A compilation and analysis of nucleic acid and amino acid sequences: I--II; III--V

Energy Technology Data Exchange (ETDEWEB)

Myers, G.; Korber, B. [eds.] [Los Alamos National Lab., NM (United States); Wain-Hobson, S. [ed.] [Laboratory of Molecular Retrovirology, Pasteur Inst.; Smith, R.F. [ed.] [Baylor Coll. of Medicine, Houston, TX (United States). Dept. of Pharmacology; Pavlakis, G.N. [ed.] [National Cancer Inst., Frederick, MD (United States). Cancer Research Facility

1993-12-31

This compendium and the accompanying floppy diskettes are the result of an effort to compile and rapidly publish all relevant molecular data concerning the human immunodeficiency viruses (HIV) and related retroviruses. The scope of the compendium and database is best summarized by the five parts that it comprises: (I) HIV and SIV Nucleotide Sequences; (II) Amino Acid Sequences; (III) Analyses; (IV) Related Sequences; and (V) Database Communications. Information within all the parts is updated at least twice in each year, which accounts for the modes of binding and pagination in the compendium.

Investigation on pseudosymmetry, twinning and disorder in crystal structure determinations: Ba(H2O)M2III[PO3(OH)]4 (M=Fe, V) as examples

International Nuclear Information System (INIS)

Sun Wei; Huang Yaxi; Pan Yuanming; Mi Jinxiao

2012-01-01

Twinning commonly occurs in monoclinic crystals with dimensionally similar a and c axes and results in pseudo-orthorhombic symmetries with overlapping diffractions. For example, twinning in the new synthetic compound Ba(H 2 O)Fe 2 [PO 3 (OH)] 4 , which varies in space group from P2 1 to P2 1 /c with approximately equal a and c axial lengths, gives rise to a pseudosymmetry of C222 1 . Similarly, the related compound Ba(H 2 O)V 2 [PO 3 (OH)] 4 is commonly twinned and varies in space groups as well, arising from ordered to disordered distributions of the barium cations and water molecules in the cavities. Moreover, analyses of these and other twinned structures show that the small average standard uncertainty of bond distances is a sensitive criterion for structure determinations, especially for those involving crystal twinning as well as order–disorder. A proper structure determination leads to small standard uncertainties of the atomic displacement parameters, which further result in the small standard uncertainties of bond distances. - Graphical abstract: Ba(H 2 O)M 2 III [PO 3 (OH)] 4 (M=Fe, V) varies in space group from P2 1 to P2 1 /c, arising from ordered to disordered distributions of Ba 2+ and H 2 O in the cavities. Highlights: ► Twinning commonly occurs in monoclinic crystals with a≈c. ► Overlapping diffractions from twin domains hamper with the determination of real space groups. ► Conventional criteria for evaluating the real space groups are not effective in this case. ► Small standard uncertainty of bond distances is proposed as a sensitive criterion. ► Using this criterion we determined the order–disorder structures of Ba(H 2 O)M 2 III [PO 3 (OH)] 4 (M=Fe, V) from twinned crystals.

Determinants of relative skeletal maturity in South African children.

Science.gov (United States)

Hawley, Nicola L; Rousham, Emily K; Johnson, William; Norris, Shane A; Pettifor, John M; Cameron, Noël

2012-01-01

The variation of skeletal maturity about chronological age is a sensitive indicator of population health. Age appropriate or advanced skeletal maturity is a reflection of adequate environmental and social conditions, whereas delayed maturation suggests inadequate conditions for optimal development. There remains a paucity of data, however, to indicate which specific biological and environmental factors are associated with advancement or delay in skeletal maturity. The present study utilises longitudinal data from the South African Birth to Twenty (Bt20) study to indentify predictors of relative skeletal maturity (RSM) in early adolescence. A total of 244 black South African children (n=131 male) were included in this analysis. Skeletal maturity at age 9/10 years was assessed using the Tanner and Whitehouse III RUS technique. Longitudinal data on growth, socio-economic position and pubertal development were entered into sex-specific multivariable general linear regression models with relative skeletal maturity (skeletal age-chronological age) as the outcome. At 9/10 years of age males showed an average of 0.66 years delay in skeletal maturation relative to chronological age. Females showed an average of 1.00 year delay relative to chronological age. In males, being taller at 2 years (pdetermining the rate of skeletal maturation during childhood independently of current stature. Copyright © 2011 Elsevier Inc. All rights reserved.

Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

International Nuclear Information System (INIS)

Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

2007-01-01

Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

The anharmonic phonon decay rate in group-III nitrides

International Nuclear Information System (INIS)

Srivastava, G P

2009-01-01

Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

Mature students' perspectives of studying radiography

International Nuclear Information System (INIS)

Williams, M.; Decker, S.

2009-01-01

The study set out to explore the experiences of all final year mature students on a diagnostic radiography course, in one United Kingdom University. The aims were to identify any difficulties they may have had and to make recommendations to improve mature students' learning experiences with the hope of lowering attrition rates in this group. A qualitative study involving one-to-one audio recorded interviews was utilised. Analysis of the transcripts of interviews suggested that the group believed that their maturity and previous experiences helped them in the clinical environment and put them in a good position, when asked, to counsel younger students. However for some of the mature students these experiential skills did not extend fully into seeking appropriate support for themselves. The mature students were found to be highly motivated but there was a conflict between balancing clinical and academic aspects of studying as well as balancing studying with home life. The group was found to be unprepared for the volume of academic work and its detrimental effect on family life as they sacrificed other aspects of their lives in order to complete the course. It is recommended that forewarning and forearming prospective mature students be considered by radiography education providers. Setting up and utilising an on-line forum providing a 24/7 peer support environment would aid in coping with academic, clinical or personal problems

Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

Science.gov (United States)

Dubrovskii, V. G.

2017-11-01

Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

Physical Activity-Related Injury Profile in Children and Adolescents According to Their Age, Maturation, and Level of Sports Participation.

Science.gov (United States)

Costa E Silva, Lara; Fragoso, Maria Isabel; Teles, Júlia

Physical activity (PA) is beneficial, enhancing healthy development. However, one-third of school-age children practicing sports regularly suffer from an injury. These injuries are associated with sex, chronological age, and PA level. To identify the importance of age, PA level, and maturity as predictors of injury in Portuguese youth. Descriptive epidemiological study. Level 3. Information about injury and PA level was assessed via 2 questionnaires (LESADO RAPIL II) from 647 subjects aged 10 to 17 years. Maturity offset according to Mirwald (time before or after peak height velocity) and Tanner-Whitehouse III bone age estimates were used to evaluate maturation. Binary logistic regression and gamma regression were used to determine significant predictors of injury and injury rate. Injury occurrence was higher for both sexes in recreational, school, and federated athletes (athletes engaged in sports that are regulated by their respective federations, with formal competition). These injuries also increased with age in boys and in the higher maturity offset group in girls. Injury rate was higher for both sexes in the no sports participation group. Early-maturing girls, with higher bone age and lower maturity offset, showed higher injury rate. Injuries in Portuguese youth were related to PA level, age, and biological maturation. Recreational, school, and federated athletes had more injury ocurrences while subjects with no sports participation had higher injury risk. Older subjects had more injuries. Early-maturing girls that had just passed peak height velocity may be particularly vulnerable to risk of sports injury because of the growing process. Increased knowledge about injury with specific PA exposure data is important to an overall risk management strategy. This study has deepened the association between injury and biological maturation variables.

Treatment and post-treatment effects of facemask therapy on the sagittal pharyngeal dimensions in Class III subjects.

Science.gov (United States)

Baccetti, Tiziano; Franchi, Lorenzo; Mucedero, Manuela; Cozza, Paola

2010-06-01

The purpose of this cephalometric study was to analyse the treatment and post-treatment craniofacial effects of a facemask (FM) combined with a bite block (BB) with specific regard to the sagittal pharyngeal dimensions in subjects with a Class III malocclusion when compared with an untreated Class III control group. The FM/BB group (22 subjects, 12 females and 10 males) had a mean age pre-treatment (T1) of 8.9 +/- 1.5 years, at the end of active treatment (T2) of 10.5 +/- 1.3 years, and post-treatment (T3) of 12.6 +/- 1.9 years. The treated group was compared with a control group of 14 subjects (6 females and 8 males) with untreated Class III malocclusions that matched the FM/BB group as to age at T1, T2, and T3, observation periods and skeletal maturation. Comparisons of the T2-T1 and T3-T1 changes between the two groups were analysed with the Mann-Whitney test. Significant favourable skeletal changes in the maxilla and mandible were observed in the treated group both after Ts2 and T3. No significant short- or long-term changes in the sagittal oropharyngeal and nasopharyngeal airway dimensions were induced by maxillary protraction in subjects with a Class III malocclusion when compared with untreated controls.

Oxygen tension and oocyte density during in vitro maturation affect the in vitro fertilization of bovine oocytes

Directory of Open Access Journals (Sweden)

Angelo Bertani Giotto

2015-12-01

Full Text Available Oocyte maturation is the key factor affecting the fertilization and embryonic development. Factors such as oocyte density and oxygen tension can directly influence the IMV. Thus, the objective of this study was to evaluate the effect of the association of oxygen tensions (5% or 20% with different oocyte densities (1:10?l or 1:20?l in the in vitro maturation (IVM of bovine oocytes on maturation and fertilization rates, ROS production and antioxidant activity. Three experiments were performed with bovine oocytes that were obtained from slaughterhouse ovaries. After selection, the oocytes were randomly distributed in four treatments: 1:10/5%; 1:10/20%; 1:20/5%and 1:20/20% for each experiment. In experiment I, nuclear maturation status and cytoplasmic maturation were evaluated through detection of the first polar body by immunofluorescence and the mitochondrial reorganization assay. In experiment II, ROS production and antioxidant activity were analyzed in oocytes and IVM medium after 24 h of maturation through detection of ROS, reduced glutathione (GSH and Superoxide dismutase activity by spectrofluorimetric methods. In experiment III, fertilization was evaluated through pronucleus formation, sperm penetration with or without decondensation and polyspermy rates by immunofluorescence. In experiment I, the nuclear maturation and cytoplasmic maturation were similar among treatments (P>0.05. In experiment II, reactive oxygen species in oocytes were elevated in treatments with low oxygen tension which was independent of oocyte density (P<0.05. Additionally, ROS levels in IVM medium were higher in treatments with high oocyte density by volume of medium, which was independent of oxygen tension (P<0.05. In Experiment III, the fertilization and penetration rates were higher in the treatment with 20% oxygen tension and high oocyte density (P<0.05. Furthermore, a high incidence of polyspermy was observed in groups with high oxygen tension and low oocyte

Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

Science.gov (United States)

Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

2017-07-01

Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

Förster Resonance Energy Transfer (FRET as a Tool for Dissecting the Molecular Mechanisms for Maturation of the Shigella Type III Secretion Needle Tip Complex

Directory of Open Access Journals (Sweden)

William D. Picking

2012-11-01

Full Text Available Förster resonance energy transfer (FRET provides a powerful tool for monitoring intermolecular interactions and a sensitive technique for studying Å-level protein conformational changes. One system that has particularly benefited from the sensitivity and diversity of FRET measurements is the maturation of the Shigella type III secretion apparatus (T3SA needle tip complex. The Shigella T3SA delivers effector proteins into intestinal cells to promote bacterial invasion and spread. The T3SA is comprised of a basal body that spans the bacterial envelope and a needle with an exposed tip complex that matures in response to environmental stimuli. FRET measurements demonstrated bile salt binding by the nascent needle tip protein IpaD and also mapped resulting structural changes which led to the recruitment of the translocator IpaB. At the needle tip IpaB acts as a sensor for host cell contact but prior to secretion, it is stored as a heterodimeric complex with the chaperone IpgC. FRET analyses showed that chaperone binding to IpaB’s N-terminal domain causes a conformational change in the latter. These FRET analyses, with other biophysical methods, have been central to understanding T3SA maturation and will be highlighted, focusing on the details of the FRET measurements and the relevance to this particular system.

Cloud point extraction combined with electrothermal atomic absorption spectrometry for the speciation of antimony(III) and antimony(V) in food packaging materials

International Nuclear Information System (INIS)

Jiang Xiuming; Wen Shengping; Xiang Guoqiang

2010-01-01

A simple, sensitive method for the speciation of inorganic antimony by cloud point extraction combined with electrothermal atomic absorption spectrometry (ETAAS) is presented and evaluated. The method based on the fact that formation of a hydrophobic complex of antimony(III) with ammonium pyrrolidine dithiocarbamate (APDC) at pH 5.0 and subsequently the hydrophobic complex enter into surfactant-rich phase, whereas antimony(V) remained in aqueous solutions. Antimony(III) in surfactant-rich phase was analyzed by ETAAS after dilution by 0.2 mL nitric acid in methanol (0.1 M), and antimony(V) was calculated by subtracting antimony(III) from the total antimony after reducing antimony(V) to antimony(III) by L-cysteine. The main factors affecting the cloud point extraction, such as pH, concentration of APDC and Triton X-114, equilibrium temperature and incubation time, sample volume were investigated in detail. Under the optimum conditions, the detection limit (3σ) of the proposed method was 0.02 ng mL -1 for antimony(III), and the relative standard deviation was 7.8% (c = 1.0 ng mL -1 , n = 7). The proposed method was successfully applied to speciation of inorganic antimony in the leaching solutions of different food packaging materials with satisfactory results.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

Science.gov (United States)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

Genomic organization, sequence characterization and expression analysis of Tenebrio molitor apolipophorin-III in response to an intracellular pathogen, Listeria monocytogenes.

Science.gov (United States)

Noh, Ju Young; Patnaik, Bharat Bhusan; Tindwa, Hamisi; Seo, Gi Won; Kim, Dong Hyun; Patnaik, Hongray Howrelia; Jo, Yong Hun; Lee, Yong Seok; Lee, Bok Luel; Kim, Nam Jung; Han, Yeon Soo

2014-01-25

Apolipophorin III (apoLp-III) is a well-known hemolymph protein having a functional role in lipid transport and immune response of insects. We cloned full-length cDNA encoding putative apoLp-III from larvae of the coleopteran beetle, Tenebrio molitor (TmapoLp-III), by identification of clones corresponding to the partial sequence of TmapoLp-III, subsequently followed with full length sequencing by a clone-by-clone primer walking method. The complete cDNA consists of 890 nucleotides, including an ORF encoding 196 amino acid residues. Excluding a putative signal peptide of the first 20 amino acid residues, the 176-residue mature apoLp-III has a calculated molecular mass of 19,146Da. Genomic sequence analysis with respect to its cDNA showed that TmapoLp-III was organized into four exons interrupted by three introns. Several immune-related transcription factor binding sites were discovered in the putative 5'-flanking region. BLAST and phylogenetic analyses reveal that TmapoLp-III has high sequence identity (88%) with Tribolium castaneum apoLp-III but shares little sequence homologies (molitor. Copyright © 2013 Elsevier B.V. All rights reserved.

SHINE-III. Simple code for skyshine dose calculation up to 3 GeV neutrons

Energy Technology Data Exchange (ETDEWEB)

Tsukiyama, Toshihisa; Tayama, Ryuichi; Handa, Hiroyuki [Hitachi Engineering Co. Ltd., Ibaraki (Japan)] [and others

2000-03-01

Skyshine dose at site boundary is considered as one of the most fundamental issues to get approval of constructing nuclear installations. Skyshine conical beam response functions (CBRF) for high energy neutrons up to 3 GeV are obtained using NMTC-JAERI and MCNP code. This CBRF is fitted to the four parameters equation. Simple code named SHINE-III using this equation with updated data is developed. (author)

Relationship between age at menarche and skeletal maturation stages in Taiwanese female orthodontic patients.

Science.gov (United States)

Lai, Eddie Hsiang-Hua; Chang, Jenny Zwei-Chieng; Jane Yao, Chung-Chen; Tsai, Shih-Jaw; Liu, Jen-Pei; Chen, Yi-Jane; Lin, Chun-Pin

2008-07-01

The age at menarche reflects a pubertal girl's physiologic maturity. The aims of this study were to evaluate the relationship between the age at menarche and skeletal maturation in female orthodontic patients. Hand-wrist radiographs and lateral cephalometric radiographs from 304 adolescent female subjects (age, 8-18.9 years) were selected from the files of the Department of Orthodontics, National Taiwan University Hospital (NTUH). Hand-wrist bone maturation stages were assessed using the NTUH Skeletal Maturation Index (NTUH-SMI). Cervical vertebral maturation stages (CVMS) were determined using the latest CVMS Index. Menarcheal ages were self-reported by the patients and verified by the patients' mothers. The relationships between the NTUH-SMI or CVM stages and menarcheal status were investigated. More than 90% of the 148 subjects who had already attained menstruation had skeletal maturation beyond the NTUH-SMI stage four or CVMS III. However, the subjects who had never experienced menarche mostly had skeletal maturation before NTUH-SMI stage five or CVMS IV. During the period of orthodontic treatment, 19 females experienced their menarche. The mean age at menarche for the 167 female patients in total was 11.97 years. In average, menarche occurred between NTUH-SMI stages four and five or between CVM stages III and IV. The percentage of girls with menses increased from 1.2% at age 9 to 6.6% at age 10, 39.5% at age 11, 81.4% at age 12, 97% at age 13, and 100% at age 14. Compared with the results obtained 20 years previously, we found a downward shift of 0.47 years per decade for the mean age at menarche in female orthodontic patients. The majority of female orthodontic patients have passed the pubertal growth spurt when they experience their menarche. Menarche usually follows the pubertal growth spurt by about 1 year and occurs after NTUH-SMI stage four or CVMS III.

Interaction of the Yersinia pestis type III regulatory proteins LcrG and LcrV occurs at a hydrophobic interface

Directory of Open Access Journals (Sweden)

Nilles Matthew L

2002-06-01

Full Text Available Abstract Background Secretion of anti-host proteins by Yersinia pestis via a type III mechanism is not constitutive. The process is tightly regulated and secretion occurs only after an appropriate signal is received. The interaction of LcrG and LcrV has been demonstrated to play a pivotal role in secretion control. Previous work has shown that when LcrG is incapable of interacting with LcrV, secretion of anti-host proteins is prevented. Therefore, an understanding of how LcrG interacts with LcrV is required to evaluate how this interaction regulates the type III secretion system of Y. pestis. Additionally, information about structure-function relationships within LcrG is necessary to fully understand the role of this key regulatory protein. Results In this study we demonstrate that the N-terminus of LcrG is required for interaction with LcrV. The interaction likely occurs within a predicted amphipathic coiled-coil domain within LcrG. Our results demonstrate that the hydrophobic face of the putative helix is required for LcrV interaction. Additionally, we demonstrate that the LcrG homolog, PcrG, is incapable of blocking type III secretion in Y. pestis. A genetic selection was utilized to obtain a PcrG variant capable of blocking secretion. This PcrG variant allowed us to locate a region of LcrG involved in secretion blocking. Conclusion Our results demonstrate that LcrG interacts with LcrV via hydrophobic interactions located in the N-terminus of LcrG within a predicted coiled-coil motif. We also obtained preliminary evidence that the secretion blocking activity of LcrG is located between amino acids 39 and 53.

Toxic and hazardous chemicals, Title III and communities: An outreach manual for community groups

International Nuclear Information System (INIS)

McNeil, C.; Arkin, E.B.; McCallum, D.

1989-09-01

The manual was prepared for State and local government officials, local emergency planning committee (LEPCs), and other community groups that want to make Title III work. It is intended as a practical guide for those who have little or no previous experience in the field of communication, whose time must be snatched from home and office, and whose resources are limited. The manual has three major sections: Part I discusses planning, which is vital to the success of a communication program; Part II suggests ways to get and keep people involved, especially important because Title III affects so many different sectors of the community; Part III, a how-to-do-it section, talks about specific tasks, such as giving a speech or writing a press release. Appendices include a detailed explanation of the law, a glossary, a list of recent studies related to Title III communications, a list of educational materials, and a list of State contacts

Simultaneous Oxidation and Sequestration of As(III) from Water by Using Redox Polymer-Based Fe(III) Oxide Nanocomposite.

Science.gov (United States)

Zhang, Xiaolin; Wu, Mengfei; Dong, Hao; Li, Hongchao; Pan, Bingcai

2017-06-06

Water decontamination from As(III) is an urgent but still challenging task. Herein, we fabricated a bifunctional nanocomposite HFO@PS-Cl for highly efficient removal of As(III), with active chlorine covalently binding spherical polystyrene host for in situ oxidation of As(III) to As(V), and Fe(III) hydroxide (HFO) nanoparticles (NPs) embedded inside for specific As(V) removal. HFO@PS-Cl could work effectively in a wide pH range (5-9), and other substances like sulfate, chloride, bicarbonate, silicate, and humic acid exert insignificant effect on As(III) removal. As(III) sequestration is realized via two pathways, that is, oxidation to As(V) by the active chlorine followed by specific As(V) adsorption onto HFO NPs, and As(III) adsorption onto HFO NPs followed by oxidation to As(V). The exhausted HFO@PS-Cl could be refreshed for cyclic runs with insignificant capacity loss by the combined regeneration strategy, that is, alkaline solution to rinse the adsorbed As(V) and NaClO solution to renew the host oxidation capability. In addition, fixed-bed experiments demonstrated that the HFO@PS-Cl column could generate >1760 bed volume (BV) effluent from a synthetic As(III)-containing groundwater to meet the drinking water standard (nanocomposites, HFO@PS-N and HFO@D201 could only generate 450 and 600 BV effluents under otherwise identical conditions.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

Science.gov (United States)

2015-08-27

copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

Isothiocyanato complexes of Gd(III), Tb(III), Dy(III) and Ho(III) with 2-(2'-pyridyl)benzimidazole

Energy Technology Data Exchange (ETDEWEB)

Mishra, A; Singh, V K

1982-01-01

Six-coordinated complexes of the type (Ln(PyBzH)/sub 2/NCS.H/sub 2/O) (NCS)/sub 2/.nH/sub 2/O/mC/sub 2/H/sub 5/OH (Ln = Gd(III), Tb(III), Dy(III) and Ho(III), n=1-2; m=1) have been prepared from Ln(NCS)/sub 6//sup 3 -/. The room temperature magnetic moment values confirm the terpositive state of the lanthanide ions. Infrared spectra suggest the N-coordination of thiocyanate group. Electronic spectral studies of Tb(III), Dy(III) and Ho(III) complexes have been made in terms of LSJ term energies. 13 refs.

Progress in the development of metamorphic multi-junction III-V space solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinharoy, S.; Patton, M.O.; Valko, T.M.; Weizer, V.G. [Essential Research Inc., Cleveland, OH (United States)

2002-07-01

Theoretical calculations have shown that highest-efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi-junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AMO), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV A1GaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AMO efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. For the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. (author)

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

International Nuclear Information System (INIS)

Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

2014-01-01

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

Energy Technology Data Exchange (ETDEWEB)

Oberhoff, S.

2007-12-03

This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

Maturation of human oocytes in vitro

Directory of Open Access Journals (Sweden)

Mojca Čižek-Sajko

2007-01-01

Full Text Available Background: Immature oocyte retrieval followed by in vitro maturation is a promising infertility treatment option. In patients with morphologically normal ovaries and regular menstrual cycles and in patients with polycystic ovary syndrome (PCOS we attempted to assess the success of oocyte in vitro maturation in in vitro fertilization (IVF procedures.Methods: Retrospectively we analyzed 87 IVF procedures with in vitro maturation of oocytes carried out in 73 infertile couples treated at the Maribor Teaching Hospital. We compared the success following three different hormone priming protocols: regular cycling patients with normal ovaries and without hormone priming (Group A, n = 27; patients with PCOS and hormone priming with follitropin (follicle stimulating hormone, FSH (Group B, n = 22; patients with PCOS and hormone priming with human chorionic gonadotrophin (hCG (Group C, n = 38. Success of the procedure was evaluated on the basis of the ability of oocytes to mature, fertilize and develop into embryos, and on the basis of the quality of embryos and their ability to implant in the uterus.Results: In regular cycling patients with normal ovaries (n = 27 we obtained a significantly lower number of immature oocytes (3.2 ± 2.5 compared with patients with PCOS and FSH priming (11.7 ± 7.2 or those with PCOS and hCG priming (10.4 ± 7.2. The oocyte maturation rate, the fertilization rate and the embryo cleavage rate were as follows: in Group A 57.7 %, 63.2 % and 91.7 %, in Group B 57.6 %, 66.2 % and 90.0 %, and in Group C 58.0 %, 66.2 % and 91.0 % (the differences between groups were not statistically significant. Six pregnancies were recorded only in patients with PCOS. The pregnancy rate per embryo transfer was 1/20 (5.0 % in patients with FSH priming, and 5/33 (15.2 % in patients with hCG priming.Conclusions: Oocyte in vitro maturation is successful in patients with normal ovaries and regular menstrual cycle as well as in those with polycystic

High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

Energy Technology Data Exchange (ETDEWEB)

Hubbard, Seth

2012-09-12

The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

The maturation of randomised controlled trials in mental health ...

African Journals Online (AJOL)

The aims of this paper are: (i) to give an overview of the use and maturation of randomised controlled trials (RCTs) in mental health services research, (ii) to indicate areas in which mental health may present particular challenges, and (iii) to outline necessary steps to strengthen the capacity to conduct better quality ...

General theory of the transverse dielectric constant of III-V semiconducting compounds

Science.gov (United States)

Kahen, K. B.; Leburton, J. P.

1985-01-01

A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.

Science.gov (United States)

Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken

2015-12-29

The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

Sorption of environmentally relevant radionuclides (U(VI), Np(V)) and lanthanides (Nd(III)) on feldspar and mica

Energy Technology Data Exchange (ETDEWEB)

Richter, Constanze

2015-11-05

A safe storage of radioactive waste in repositories is an important task to protect humans and the environment from radio- and chemotoxicity. Long-term safety assessments predict the behavior of potential environmental contaminants like the actinides plutonium, uranium, or neptunium, in the near and far field of repositories. For such safety assessments, it is necessary to know the migration behavior of the contaminants in the environment, which is mainly dependent on the aquatic speciation, the solubility product of relevant solid phases, and the retardation due to sorption on surrounding minerals. Thus, an investigation of sorption processes of contaminants onto different minerals as well as the derivation of mineral specific surface complexation model (SCM) parameters is of great importance. Feldspar and mica are widely distributed in nature. They occur as components of granite, which is considered as a potential host rock for a repository in Germany, and in numerous other rocks, and thus also in the far field of nearly all repositories. However, their sorption behavior with actinides has only been scarcely investigated until now. In order to better characterize these systems and subsequently to integrate these minerals into the long-term safety assessments, this work focuses on the investigation of the sorption behavior of U(VI), Np(V), and Nd(III) as analogue for An(III) onto the minerals orthoclase and muscovite, representing feldspars and mica, respectively. All investigations were performed under conditions relevant to the far field of a repository. In addition to the extensive characterization of the minerals, batch sorption experiments, spectroscopic investigations, and surface complexation modeling were performed to elucidate the uptake and speciation of actinides on the mineral surfaces. In addition, the influence of microorganisms naturally occurring on the mineral surfaces and the effect of Ca{sup 2+} on U(VI) uptake on the minerals was studied. The

Sorption of environmentally relevant radionuclides (U(VI), Np(V)) and lanthanides (Nd(III)) on feldspar and mica

International Nuclear Information System (INIS)

Richter, Constanze

2015-01-01

A safe storage of radioactive waste in repositories is an important task to protect humans and the environment from radio- and chemotoxicity. Long-term safety assessments predict the behavior of potential environmental contaminants like the actinides plutonium, uranium, or neptunium, in the near and far field of repositories. For such safety assessments, it is necessary to know the migration behavior of the contaminants in the environment, which is mainly dependent on the aquatic speciation, the solubility product of relevant solid phases, and the retardation due to sorption on surrounding minerals. Thus, an investigation of sorption processes of contaminants onto different minerals as well as the derivation of mineral specific surface complexation model (SCM) parameters is of great importance. Feldspar and mica are widely distributed in nature. They occur as components of granite, which is considered as a potential host rock for a repository in Germany, and in numerous other rocks, and thus also in the far field of nearly all repositories. However, their sorption behavior with actinides has only been scarcely investigated until now. In order to better characterize these systems and subsequently to integrate these minerals into the long-term safety assessments, this work focuses on the investigation of the sorption behavior of U(VI), Np(V), and Nd(III) as analogue for An(III) onto the minerals orthoclase and muscovite, representing feldspars and mica, respectively. All investigations were performed under conditions relevant to the far field of a repository. In addition to the extensive characterization of the minerals, batch sorption experiments, spectroscopic investigations, and surface complexation modeling were performed to elucidate the uptake and speciation of actinides on the mineral surfaces. In addition, the influence of microorganisms naturally occurring on the mineral surfaces and the effect of Ca 2+ on U(VI) uptake on the minerals was studied. The

Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

Science.gov (United States)

Schoeche, Stefan

The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

Science.gov (United States)

Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

2012-06-15

A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

Sense of Well-Being in Patients with Fibromyalgia: Aerobic Exercise Program in a Mature Forest—A Pilot Study

Directory of Open Access Journals (Sweden)

Secundino López-Pousa

2015-01-01

Full Text Available Background and Objective. Most patients with fibromyalgia benefit from different forms of physical exercise. Studies show that exercise can help restore the body’s neurochemical balance and that it triggers a positive emotional state. So, regular exercise can help reduce anxiety, stress, and depression. The aim of this study was to analyze the benefits of moderate aerobic exercise when walking in two types of forests, young and mature, and to assess anxiety, sleep, pain, and well-being in patients with fibromyalgia. Secondary objectives included assessing (i whether there were differences in temperature, sound, and moisture, (ii whether there was an improvement in emotional control, and (iii whether there was an improvement in health (reduction in pain and in physical and mental relaxation. Patients and Methods. A study involving walking through two types of forests (mature and young was performed. A total of 30 patients were randomly assigned to two groups, mature and young forests. The participants were administered the following tests: the Spanish version of the Revised Fibromyalgia Impact Questionnaire (FIQR at baseline and the end-point of the study, the State-Trait Anxiety Inventory (STAI after each walk, and a series of questions regarding symptomatic evolution. Several physiological parameters were registered. Results. FIQR baseline and end-point scores indicated a significant decrease in the symptomatic subscale of the FIQ (SD = 21.7; z=-2.4; p=0.041. The within-group analysis revealed that differences were significant with respect to days of intense pain, insomnia, and days of well-being only in the group assigned to the mature forest, not in the group assigned to the young forest. No differences were found with respect to anxiety. Conclusions. Although the main aim of this research was not achieved, as the results revealed no differences between the groups in the two forest types, authors could confirm that an aerobic exercise

Age, growth, and maturity of the longnose sucker Catostomus catostomus, of western Lake Superior

Science.gov (United States)

Bailey, Merryll M.

1969-01-01

Studies of age, growth, and maturity were based on 1760 fish collected in western Lake Superior in 1964-65. The body:scale relation was curvilinear and the curve had an intercept of 1.65 inches on the length axis. The weight increased as the 2.85 power of the length. Some fish formed an annulus before May 18 in 1965; all had completed annuli by late September. Longnose suckers grew 3.6 inches the 1st year, reached 12 inches in the 6th year, and 18 inches in the 11th year. Fish from Pikes Bay grew faster than those from Gull Island Shoal. Over 6 years were required for weight to reach 1 lb and nearly 10 years to reach 2 lb. Minimum length at maturity was 10.5 inches for males and 11.5 inches for females. The youngest mature male belonged to age-group IV and the youngest mature female to age-group V. All males were mature at 14.5-14.9 inches (age-group VIII) and all females at 15.0-15.4 inches (age-group IX). Finclipped longnose suckers returned to spawn in the Brule River in successive years. One fish returned to spawn in 4 successive years. Many of the fish were not recaptured until 2 or 3 years after marking. The time of the Brule River spawning migration depended more on water temperature than on length of day. The average water temperature during the peak of the spawning runs of 1958-64 was 55.4 F. Larval suckers apparently spend little time in the Brule River and adjacent streams and drift downstream to the lake soon after hatching. The number of eggs in the ovaries of eight suckers ranged from 14 to 35 thousand and averaged 24 thousand for fish 13.9-17.7 inches long.

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

Science.gov (United States)

Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

2018-02-19

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

Structural properties of III-V zinc-blende semiconductors under pressure

International Nuclear Information System (INIS)

Froyen, S.; Cohen, M.L.

1983-01-01

The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

Participants' evaluation of a group-based organisational assessment tool in Danish general practice: the Maturity Matrix.

Science.gov (United States)

Buch, Martin Sandberg; Edwards, Adrian; Eriksson, Tina

2009-01-01

The Maturity Matrix is a group-based formative self-evaluation tool aimed at assessing the degree of organisational development in general practice and providing a starting point for local quality improvement. Earlier studies of the Maturity Matrix have shown that participants find the method a useful way of assessing their practice's organisational development. However, little is known about participants' views on the resulting efforts to implement intended changes. To explore users' perspectives on the Maturity Matrix method, the facilitation process, and drivers and barriers for implementation of intended changes. Observation of two facilitated practice meetings, 17 semi-structured interviews with participating general practitioners (GPs) or their staff, and mapping of reasons for continuing or quitting the project. General practices in Denmark Main outcomes: Successful change was associated with: a clearly identified anchor person within the practice, a shared and regular meeting structure, and an external facilitator who provides support and counselling during the implementation process. Failure to implement change was associated with: a high patient-related workload, staff or GP turnover (that seemed to affect small practices more), no clearly identified anchor person or anchor persons who did not do anything, no continuous support from an external facilitator, and no formal commitment to working with agreed changes. Future attempts to improve the impact of the Maturity Matrix, and similar tools for quality improvement, could include: (a) attention to matters of variation caused by practice size, (b) systematic counselling on barriers to implementation and support to structure the change processes, (c) a commitment from participants that goes beyond participation in two-yearly assessments, and (d) an anchor person for each identified goal who takes on the responsibility for improvement in practice.

Melatonin accelerates maturation inducing hormone (MIH): induced oocyte maturation in carps.

Science.gov (United States)

Chattoraj, Asamanja; Bhattacharyya, Sharmistha; Basu, Dipanjan; Bhattacharya, Shelley; Bhattacharya, Samir; Maitra, Saumen Kumar

2005-02-01

The present communication is an attempt to demonstrate the influence of melatonin on the action of maturation inducing hormone (MIH) on the maturation of oocytes in carps. The oocytes from gravid female major carp Labeo rohita were isolated and incubated separately in Medium 199 containing (a) only MIH (1 microg/ml), (b) only melatonin (at concentrations of 50, 100 or 500 pg/ml), and (c) both melatonin and MIH, but at different time intervals. In the latter group, melatonin was added to the incubating medium either (i) 4 h before addition of MIH, (ii) 2 h before addition of MIH, (iii) co-administered with MIH (0 h interval) or (iv) 2 h after addition of MIH. In each case, oocytes were further incubated for 4, 8, 12 or 16 h post- administration of MIH, and the effects of treatment on oocyte maturation were evaluated by considering the rate (%) of germinal vesicle breakdown (GVBD). Incubation of oocytes in a medium containing only melatonin did not result in GVBD of any oocyte. Nearly all the oocytes underwent GVBD when incubated with MIH for 16 h. Administration of melatonin along with MIH (at 0 h interval) or 2 h after addition of MIH did not result in any significant change in the rate of GVBD compared to that in a medium containing only MIH. However, it was quite interesting to observe that incubation of oocytes with melatonin especially 4 h prior to addition of MIH in the medium, led to an accelerated rate of GVBD in the oocytes. Experiments with the oocytes of another major carp Cyprinus carpio following an identical schedule depicted similar results except a difference in the optimum melatonin dose. In L. rohita, 50 pg/ml melatonin had maximum acceleratory effect on MIH-induced GVBD of oocytes, while it was 100 pg/ml in C. carpio. Further study revealed that pre-incubation with melatonin accelerates the action of MIH on the formation of a complex of two proteins (MPF), a regulatory component called cyclin B and the catalytic component protein kinase known as

Severe retinopathy of prematurity predicts delayed white matter maturation and poorer neurodevelopment.

Science.gov (United States)

Glass, Torin J A; Chau, Vann; Gardiner, Jane; Foong, Justin; Vinall, Jillian; Zwicker, Jill G; Grunau, Ruth E; Synnes, Anne; Poskitt, Kenneth J; Miller, Steven P

2017-11-01

To determine whether severe retinopathy of prematurity (ROP) is associated with (1) abnormal white matter maturation and (2) neurodevelopmental outcomes at 18 months' corrected age (CA) compared with neonates without severe ROP. We conducted a prospective longitudinal cohort of extremely preterm neonates born 24-28 weeks' gestational age recruited between 2006 and 2013 with brain MRIs obtained both early in life and at term-equivalent age. Severe ROP was defined as ROP treated with retinal laser photocoagulation. Using diffusion tensor imaging and tract-based spatial statistics (TBSS), white matter maturation was assessed by mean fractional anisotropy (FA) in seven predefined regions of interest. Neurodevelopmental outcomes were assessed with Bayley Scales of Infant and Toddler Development-III (Bayley-III) composite scores at 18 months' CA. Subjects were compared using Fisher's exact, Kruskal-Wallis and generalised estimating equations. Families were recruited from the neonatal intensive care unit at BC Women's Hospital. Of 98 extremely preterm neonates (median: 26.0 weeks) assessed locally for ROP, 19 (19%) had severe ROP and 83 (85%) were assessed at 18 months' CA. Severe ROP was associated with lower FA in the posterior white matter, and with decreased measures of brain maturation in the optic radiations, posterior limb of the internal capsule (PLIC) and external capsule on TBSS. Bayley-III cognitive and motor scores were lower in infants with severe ROP. Severe ROP is associated with maturational delay in the optic radiations, PLIC, external capsule and posterior white matter, housing the primary visual and motor pathways, and is associated with poorer cognitive and motor outcomes at 18 months' CA. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2017. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Mall shopping preferences and patronage of mature shoppers

Directory of Open Access Journals (Sweden)

Gabriel G. Rousseau

2014-04-01

Research purpose: The purpose of this study was to investigate the buying behaviour of mature consumers (older than 55 in Port Elizabeth shopping malls. Motivation for the study: The perception of mature shoppers as old people with limited financial resources is untrue. This study investigates the behaviours of mature shoppers. Research design, approach and method: A model guided the investigation. The authors facilitated four focus groups to gain insight into mature consumers’ buying behaviours. A field survey followed with a sample of mall shoppers (n = 680. The authors performed content analysis of the focus group material and used SPSS and AMOS programs to analyse the data quantitatively. Main findings: Focus group interviews revealed specific buying behaviours of mature shoppers. The survey showed significant relationships between various determinants that influence respondents’ buying behaviours with adequate model fit indices. These results confirmed the convergent and discriminant validity of the model that comprises mall shopping anticipation, experience and patronage. Practical/managerial implications: Mature shoppers’ expectations exceeded their experiences, suggesting dissatisfaction with some aspects of their experiences. Retailers and shopping mall managers need to redesign malls if they wish to cater for the segment of ageing shoppers and their spending power. Contribution/value-add: The study contributes to the research available in South Africa on service at shopping malls that cater for mature consumers.

77 FR 50617 - Pesticide Tolerance Crop Grouping Program III; Revisions to General Tolerance Regulations

Science.gov (United States)

2012-08-22

... American Pistachio Growers trade association. III. Response to Comments In this section, EPA describes the.... EPA received one comment from the American Pistachio Growers trade association that supported including pistachio in the revised tree nut crop group. They noted that including pistachio will...

Les Houches 2015: Physics at TeV Colliders Standard Model Working Group Report

Energy Technology Data Exchange (ETDEWEB)

Andersen, J.R.; et al.

2016-05-16

This Report summarizes the proceedings of the 2015 Les Houches workshop on Physics at TeV Colliders. Session 1 dealt with (I) new developments relevant for high precision Standard Model calculations, (II) the new PDF4LHC parton distributions, (III) issues in the theoretical description of the production of Standard Model Higgs bosons and how to relate experimental measurements, (IV) a host of phenomenological studies essential for comparing LHC data from Run I with theoretical predictions and projections for future measurements in Run II, and (V) new developments in Monte Carlo event generators.

Les Houches 2015: Physics at TeV Colliders Standard Model Working Group Report

CERN Document Server

Andersen, J.R.; Becker, K.; Bell, M.; Bellm, J.; Bendavid, J.; Bothmann, E.; Boughezal, R.; Butterworth, J.; Carrazza, S.; Chiesa, M.; Cieri, L.; Ciulli, V.; Denner, A.; Duehrssen-Debling, M.; Falmagne, G.; Forte, S.; Francavilla, P.; Frederix, R.; Freytsis, M.; Gao, J.; Gras, P.; Grazzini, M.; Greiner, N.; Grellscheid, D.; Heinrich, G.; Hesketh, G.; Hoche, S.; Hofer, L.; Hou, T.J.; Huss, A.; Huston, J.; Isaacson, J.; Jueid, A.; Kallweit, S.; Kar, D.; Kassabov, Z.; Konstantinides, V.; Krauss, F.; Kuttimalai, S.; Lazapoulos, A.; Lenzi, P.; Li, Y.; Lindert, J.M.; Liu, X.; Luisoni, G.; Lonnblad, L.; Maierhofer, P.; Maître, D.; Marini, A.C.; Montagna, G.; Moretti, M.; Nadolsky, P.M.; Nail, G.; Napoletano, D.; Nicrosini, O.; Oleari, C.; Pagani, D.; Pandini, C.; Perrozzi, L.; Petriello, F.; Piccinini, F.; Platzer, S.; Pogrebnyak, I.; Pozzorini, S.; Prestel, S.; Reuschle, C.; Rojo, J.; Russo, L.; Schichtel, P.; Schonherr, M.; Schumann, S.; Siodmok, A.; Skands, P.; Soper, D.; Soyez, G.; Sun, P.; Tackmann, F.J.; Tackmann, K.; Takasugi, E.; Thaler, J.; Uccirati, S.; Utku, U.; Viliani, L.; Vryonidou, E.; Wang, B.T.; Waugh, B.; Weber, M.A.; Williams, C.; Winter, J.; Xie, K.P.; Yuan, C.P.; Yuan, F.; Zapp, K.; Zaro, M.

2016-01-01

This Report summarizes the proceedings of the 2015 Les Houches workshop on Physics at TeV Colliders. Session 1 dealt with (I) new developments relevant for high precision Standard Model calculations, (II) the new PDF4LHC parton distributions, (III) issues in the theoretical description of the production of Standard Model Higgs bosons and how to relate experimental measurements, (IV) a host of phenomenological studies essential for comparing LHC data from Run I with theoretical predictions and projections for future measurements in Run II, and (V) new developments in Monte Carlo event generators.

A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

Science.gov (United States)

Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

2018-02-01

Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

First molecular and biochemical analysis of in vivo affinity maturation in an ectothermic vertebrate.

Science.gov (United States)

Dooley, Helen; Stanfield, Robyn L; Brady, Rebecca A; Flajnik, Martin F

2006-02-07

The cartilaginous fish are the oldest phylogenetic group in which Igs have been found. Sharks produce a unique Ig isotype, IgNAR, a heavy-chain homodimer that does not associate with light chains. Instead, the variable (V) regions of IgNAR bind antigen as soluble single domains. Our group has shown that IgNAR plays an integral part in the humoral response of nurse sharks (Ginglymostoma cirratum) upon antigen challenge. Here, we generated phage-displayed libraries of IgNAR V regions from an immunized animal and found a family of clones derived from the same rearrangement event but differentially mutated during expansion. Because of the cluster organization of shark Ig genes and the paucicopy nature of IgNAR, we were able to construct the putative ancestor of this family. By studying mutations in the context of clone affinities, we found evidence that affinity maturation occurs for this isotype. Subsequently, we were able to identify mutations important in the affinity improvement of this family. Because the family clones were all obtained after immunization, they provide insight into the in vivo maturation mechanisms, in general, and for single-domain antibody fragments.

Sulfide precipitation method of separating uranium from Group II and Group III metal ions

International Nuclear Information System (INIS)

Sundar, P.S.

1977-01-01

Uranium is separated from analytical Group II and Group III metal ions in an aqueous liquor containing uranyl ions. The liquor is extracted with a non-interfering, water-immiscible, organic solvent containing a reagent which will react with the uranyl ions to form a complex soluble in the solvent. If the liquor is acidic, the solvent is washed with water. Then to the solvent is added an aqueous solution containing about 0.5 to 1.0 mole per liter of (NH 4 ) 2 CO 3 or NH 4 HCO 3 ions and sufficient sulfide ions to precipitate the metal ions as sulfides. The solvent and the aqueous solution are separated and the sulfides filtered from the aqueous solution. The ammonium-uranyl-tricarbonate in the aqueous solution can then be precipitated by increasing the concentration of (NH 4 ) 2 CO 3 or NH 4 HCO 3 ions to about 1.5 to 2.5 moles per liter. The precipitate is filtered and calcined to obtain U 3 O 8 or UO 2 . 21 claims, 1 figure

Bioenergetics and ATP Synthesis during Exercise: Role of Group III/IV Muscle Afferents.

Science.gov (United States)

Broxterman, Ryan M; Layec, Gwenael; Hureau, Thomas J; Morgan, David E; Bledsoe, Amber D; Jessop, Jacob E; Amann, Markus; Richardson, Russell S

2017-12-01

The purpose of this study was to investigate the role of the group III/IV muscle afferents in the bioenergetics of exercising skeletal muscle beyond constraining the magnitude of metabolic perturbation. Eight healthy men performed intermittent isometric knee-extensor exercise to task failure at ~58% maximal voluntary contraction under control conditions (CTRL) and with lumbar intrathecal fentanyl to attenuate group III/IV leg muscle afferents (FENT). Intramuscular concentrations of phosphocreatine (PCr), inorganic phosphate (Pi), diprotonated phosphate (H2PO4), adenosine triphosphate (ATP), and pH were determined using phosphorous magnetic resonance spectroscopy (P-MRS). The magnitude of metabolic perturbation was significantly greater in FENT compared with CTRL for [Pi] (37.8 ± 16.8 vs 28.6 ± 8.6 mM), [H2PO4] (24.3 ± 12.2 vs 17.9 ± 7.1 mM), and [ATP] (75.8% ± 17.5% vs 81.9% ± 15.8% of baseline), whereas there was no significant difference in [PCr] (4.5 ± 2.4 vs 4.4 ± 2.3 mM) or pH (6.51 ± 0.10 vs 6.54 ± 0.14). The rate of perturbation in [PCr], [Pi], [H2PO4], and pH was significantly faster in FENT compared with CTRL. Oxidative ATP synthesis was not significantly different between conditions. However, anaerobic ATP synthesis, through augmented creatine kinase and glycolysis reactions, was significantly greater in FENT than in CTRL, resulting in a significantly greater ATP cost of contraction (0.049 ± 0.016 vs 0.038 ± 0.010 mM·min·N). Group III/IV muscle afferents not only constrain the magnitude of perturbation in intramuscular Pi, H2PO4, and ATP during small muscle mass exercise but also seem to play a role in maintaining efficient skeletal muscle contractile function in men.

Complexes of lanthanum(III), cerium(III), samarium(III) and dysprosium(III) with substituted piperidines

Energy Technology Data Exchange (ETDEWEB)

Manhas, B S; Trikha, A K; Singh, H; Chander, M

1983-11-01

Complexes of the general formulae M/sub 2/Cl/sub 6/(L)/sub 3/.C/sub 2/H/sub 5/OH and M/sub 2/(NO/sub 3/)/sub 6/(L)/sub 2/.CH/sub 3/OH have been synthesised by the reactions of chlorides and nitrates of La(III), Ce(III), Sm(III) and Dy(III) with 2-methylpiperidine, 3-methylpiperidine and 4-methylpiperidine. These complexes have been characterised on the basis of their elemental analysis, and IR and electronic reflectance spectra. IR spectral data indicate the presence of coordinated ethanol and methanol molecules and bidentate nitrate groups. Coordination numbers of the metal ions vary from 5 to 8. 19 refs.

On the improvement of IT process maturity: assessment, recommendation and validation

Directory of Open Access Journals (Sweden)

Dirgahayu Teduh

2018-01-01

Full Text Available The use of information technology (IT in enterprises must be governed and managed appropriately using IT processes. The notion of IT process maturity is useful to measure the actual performance and to define the desired performance of IT processes. Improvements are necessary when there are gaps between the actual and desired performance. Most literatures focus on IT process maturity assessment. They do not address how to improve IT process maturity. This paper proposes an approach to enterprise IT process maturity improvement for COBIT processes. The approach consists of three activities, i.e. IT process maturity assessment, recommendation, and validation. Assessment is to recognise the process’ control objectives maturity. From the assessment results, recommendation identifies control objectives that must be improved and then suggests improvement actions. The prescriptive nature of the control objectives facilitates in suggesting those actions. Recommendations for managements are defined by abstracting similar actions. Validation checks whether the recommendations match with the enterprise needs and capability. It includes a scale for validation, in which enterprise’s capability is categorized into (i not capable, (ii capable with great efforts, and (iii fully capable. The paper illustrates the approach with a case study.

Displacement of group III, IV, V, and VI impurities in Si by the analyzing beam

International Nuclear Information System (INIS)

Wiggers, L.W.; Saris, F.W.

1978-01-01

By means of 2MeV He + backscattering and 1.5 MeV H + backscattering and nuclear reaction analysis in combination with the channeling technique displacement of impurity atoms in Si from substitutional into non-substitutional positions under bombardment is studied. In this paper the authors report on the displacement of Ga, Ge, P, As, Sb, Bi, Se, and Te in Si single crystals. It appears that displacement of impurity atoms is not an exception but almost a rule. The only element for which an effect was not found was Ge. Values for the displacement rate were derived and appeared to be, with the exception for Ge, all of the same order of magnitude. (Auth.)

Multicomponent Synthesis of Isoindolinone Frameworks via RhIII -Catalysed in situ Directing Group-Assisted Tandem Oxidative Olefination/Michael Addition.

Science.gov (United States)

Wang, Liang; Liu, Xi; Liu, Jian-Biao; Shen, Jun; Chen, Qun; He, Ming-Yang

2018-04-04

A Rh III -catalysed three-component synthesis of isoindolinone frameworks via direct assembly of benzoyl chlorides, o-aminophenols and activated alkenes has been developed. The process involves in situ generation of o-aminophenol (OAP)-based bidentate directing group (DG), Rh III -catalysed tandem ortho C-H olefination and subsequent cyclization via aza-Michael addition. This protocol exhibits good chemoselectivity and functional group tolerance. Computational studies showed that the presence of hydroxyl group on the N-aryl ring could enhance the chemoselectivity of the reaction. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

International Nuclear Information System (INIS)

Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

1994-01-01

A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

Voltammetric Study of Arsenic (III and Arsenic (V in Ground Water of Hajigonj and Kalkini in Bangladesh

Directory of Open Access Journals (Sweden)

Mohammad Arifur Rahman

2008-06-01

Full Text Available The speciation of arsenic in groundwater samples using Square Wave Anodic Stripping Voltammetry (SWASV, Differential Pulse Anodic Stripping Voltammetry (DPASV and Normal Pulse Anodic Stripping Voltammetry (NPASV are described. Good resolution of the species, arsenic (III and arsenic (V is achieved using SWASV. The reliability of the methods was checked by analyzing the total arsenic content of the samples by Hydride Generation Atomic Absorptioion Spectrophotometer and by analyzing prepared controlled laboratory standard solution. Since this technique is comparatively cheaper than other available techniques it could be a better analytical technique for arsenic speciation from water. In this study, the assessment of inorganic arsenic species in ground water of Kalkini (Madaripur and Hajigonj (Chandpur is reported. It shows that arsenic content in water in different locations is irregular. Most of the locations contain higher level of As(III than As(V. The highest concentration of arsenic is found in Anayetnagor (554.46 ± 0.07 mg/L of Kalkini and Raichar (562 ± 0.50 mg/L of Hajigonj. However, the level of total arsenic and As(III of most of the villages of the study areas are more than the WHO guideline value (50mg/L. Therefore a proper monitoring process should be evolved along with the development of methods to keep the water free from arsenic.

Cardiovascular effects of pimobendan in healthy mature horses.

Science.gov (United States)

Afonso, T; Giguère, S; Rapoport, G; Barton, M H; Coleman, A E

2016-05-01

Pimobendan is an inodilator used in dogs for the management of heart failure due to myxomatous valve disease or dilated cardiomyopathy. The lack of data regarding the effects of pimobendan in horses prevents the rational use of this drug. To determine the cardiovascular effects of pimobendan in healthy mature horses. Randomised experimental study. Five horses were fasted overnight prior to receiving i.v. pimobendan (0.25 mg/kg bwt), intragastric (i.g.) pimobendan (0.25 mg/kg bwt) or i.g. placebo with a washout period of one week between each administration. Horses were instrumented for the measurement of right ventricular (RV) minimum pressure, RV maximum pressure, RV end diastolic pressure, and maximum rate of increase and decrease in RV pressure before and 0.5, 1, 2, 4, and 8 h after drug administration. Arterial blood pressure, central venous pressure, cardiac output and heart rate were measured at the same time points. Data were expressed as a maximum percentage of change over baseline values. There were no adverse effects associated with administration of pimobendan. The percentage increase in heart rate was significantly greater for horses given pimobendan i.g. (33 ± 4%) and i.v. (36 ± 14%) than for those given a placebo (-2 ± 7%). The percentage increase in maximum rate of increase in RV pressure (35 ± 36%) and the percentage decrease in minimum pressure (47 ± 24%) and end diastolic pressure (34 ± 13%) were significantly greater in horses given pimobendan i.v. than in those given placebo. Other variables measured were not significantly different between treatment groups. Pimobendan administered i.v. has positive chronotropic and inotropic effects in healthy mature horses and warrants further investigation for the treatment of heart failure in horses. © 2015 EVJ Ltd.

Health-related quality of life of Portuguese children and adolescents according to their biological maturation and volume of physical activity.

Science.gov (United States)

Garcia, Catarina; Teles, Júlia; Barrigas, Carlos; Fragoso, Isabel

2018-06-01

The purpose of this study was to analyze the relationship between biological maturation and health-related quality of life (HRQoL) in Portuguese children and adolescents of both sexes when the effect of chronological age (CA) and volume of physical activity (VPA) were removed. HRQoL, biological maturation, CA, and VPA were assessed in 750 children and adolescents, 11-17 years old, from 3 schools in Lisbon, Portugal. The KIDSCREEN-52 was used to assess HRQoL. Maturity indicator was bone age (BA), using Tanner-Whitehouse III method (TW3). The participants were classified into three different maturity categories: late, on time, and early maturers. VPA was assessed by questionnaire (RAPIL II). An analysis of covariance (ANCOVA), using the CA and the VPA as covariates was completed. The level of significance was set at p ≤ 0.05. Analysis of covariance suggested an influence of biological maturation in physical well-being dimension in both sexes, with early-maturing girls and boys having worst perception. Maturity groups were also influent in moods and emotions for girls. CA seems to be particularly important in self-perception and parent relation and home life for girls and in school environment for boys. Biological maturation and CA have relevant impact on some HRQoL dimensions. These variables, due to their nature and effect should be considered particularly when working with specific domains of HRQoL as physical well-being in both sexes, moods and emotions and self-perception and parent relation and home life for girls and in school environment for boys.

A correlative study of dental age and skeletal maturation.

Science.gov (United States)

Sachan, Kiran; Sharma, Vijay Prakash; Tandon, Pradeep

2011-01-01

Skeletal age had been assessed by comparison between maturation of hand-wrist with stages of cervical vertebrae or canine calcification stages in past and this had been closely related to craniofacial growth. The importance of pubertal growth spurt in various types of orthodontic therapies is already established. Hence, this study was aimed to evaluate the relationship of skeletal maturity by hand-wrist with cervical vertebral maturation indicators and canine calcification stages. The study consisted of randomly selected 90 children from Lucknow population with 45 males (age range 10-13 years) and 45 females (age range 9-12 years). Lateral Cephalogram, hand-wrist x-ray, and periapical x-rays of maxillary and mandibular right canines were taken. Mean, standard deviation was calculated of different groups. Correlation was made among cervical vertebral maturation, hand wrist maturation, and canine calcification stages at various age groups. There was strong correlation between skeletal maturation indicator and cervical vertebral maturation indicator for both male (0.849) and female (0.932), whereas correlation between skeletal maturation indicator and canine calcification was good for both male and female (0.635, 0.891). It was concluded that cervical vertebral maturation indicator and canine calcification stages can also be used for assessing skeletal maturity.

The stability boundary of group-III transition metal diboride ScB 2 (0 0 0 1) surfaces

Science.gov (United States)

Zhao, Hui; Qin, Na

2012-01-01

Experimental observations and theoretical investigations exhibit that a group-IV(V) transition metal diboride (0 0 0 1) surface is terminated with a 1 × 1 TM(B) layer. As to a group-III transition metal diboride, we have investigated the stability boundary of ScB2 (0 0 0 1) surfaces using first principles total energy plane-wave pseudopotential method based on density functional theory. The Mulliken charge population analysis shows that Sc atoms in the second layer cannot provide B atoms in the first layer with sufficient electrons to form a complete graphene-like boron layer. We also found that the charge transfer between the first and the second layer for the B-terminated surface is more than that for Sc-terminated surface. It elucidates the reason that the outermost interlayer spacing contract more strongly in the B-terminated surface than in the Sc-terminated surface. The surface energies of both terminated ScB2 (0 0 0 1) surfaces as a function of the chemical potential of B are also calculated to check the relative stability of the two surface structures.

Seafood-Processing Sludge Composting: Changes to Microbial Communities and Physico-Chemical Parameters of Static Treatment versus for Turning during the Maturation Stage

Science.gov (United States)

Alves, David; Mato, Salustiano

2016-01-01

In general, in composting facilities the active, or intensive, stage of the process is done separately from the maturation stage, using a specific technology and time. The pre-composted material to be matured can contain enough biodegradable substrates to cause microbial proliferation, which in turn can cause temperatures to increase. Therefore, not controlling the maturation period during waste management at an industrial level can result in undesired outcomes. The main hypothesis of this study is that controlling the maturation stage through turning provides one with an optimized process when compared to the static approach. The waste used was sludge from a seafood-processing plant, mixed with shredded wood (1:2, v/v). The composting system consists of an intensive stage in a 600L static reactor, followed by maturation in triplicate in 200L boxes for 112 days. Two tests were carried out with the same process in reactor and different treatments in boxes: static maturation and turning during maturation when the temperature went above 55°C. PLFAs, organic matter, pH, electrical conductivity, forms of nitrogen and carbon, hydrolytic enzymes and respiratory activity were periodically measured. Turning significantly increased the duration of the thermophilic phase and consequently increased the organic-matter degradation. PCA differentiated significantly the two treatments in function of tracking parameters, especially pH, total carbon, forms of nitrogen and C/N ratio. So, stability and maturity optimum values for compost were achieved in less time with turnings. Whereas turning resulted in microbial-group stabilization and a low mono/sat ratio, static treatment produced greater variability in microbial groups and a high mono/sat ratio, the presence of more degradable substrates causes changes in microbial communities and their study during maturation gives an approach of the state of organic-matter degradation. Obtaining quality compost and optimizing the composting

Thumb Ossification Composite Index (TOCI) for Predicting Peripubertal Skeletal Maturity and Peak Height Velocity in Idiopathic Scoliosis: A Validation Study of Premenarchal Girls with Adolescent Idiopathic Scoliosis Followed Longitudinally Until Skeletal Maturity.

Science.gov (United States)

Hung, Alec L H; Chau, W W; Shi, B; Chow, Simon K; Yu, Fiona Y P; Lam, T P; Ng, Bobby K W; Qiu, Y; Cheng, Jack C Y

2017-09-06

Accurate skeletal maturity assessment is important to guide clinical evaluation of idiopathic scoliosis, but commonly used methods are inadequate or too complex for rapid clinical use. The objective of the study was to propose a new simplified staging method, called the thumb ossification composite index (TOCI), based on the ossification pattern of the 2 thumb epiphyses and the adductor sesamoid bone; to determine its accuracy in predicting skeletal maturation when compared with the Sanders simplified skeletal maturity system (SSMS); and to validate its interrater and intrarater reliability. Hand radiographs of 125 girls, acquired when they were newly diagnosed with idiopathic scoliosis prior to menarche and during longitudinal follow-up until skeletal maturity (a minimum of 4 years), were scored with the TOCI and SSMS. These scores were compared with digital skeletal age (DSA) and radius, ulna, and small hand bones (RUS) scores; anthropometric data; peak height velocity; and growth-remaining profiles. Correlations were analyzed with the chi-square test, Spearman and Cramer V correlation methods, and receiver operating characteristic curve analysis. Reliability analysis using the intraclass correlation (ICC) was conducted. Six hundred and forty-five hand radiographs (average, 5 of each girl) were scored. The TOCI staging system was highly correlated with the DSA and RUS scores (r = 0.93 and 0.92, p systems predicted peak height velocity with comparable accuracy, with a strong Cramer V association (0.526 and 0.466, respectively; p 0.97. The new proposed TOCI could provide a simplified staging system for the assessment of skeletal maturity of subjects with idiopathic scoliosis. The index needs to be subjected to further multicenter validation in different ethnic groups.

Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

Energy Technology Data Exchange (ETDEWEB)

Wensorra, Jakob

2009-03-20

The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a

Synthesis and characterization of La(III), Pr(III), Nd(III), Sm(III), Eu(III), Gd(III), Tb(III) and Dy(III) complexes of 2-acetylfuran-2-thenoylhydrazone

International Nuclear Information System (INIS)

Singh, B.; Singh, Praveen K.

1998-01-01

The reaction of 2-acetylfuran-2-thenoylhydrazone(afth) with Ln(III) trichlorides yields complexes of the type [Ln(afth)Cl 2 (H 2 O)(EtOH)]Cl, [Ln(III) = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy]. The complexes have been characterized by molar conductance, magnetic susceptibility and TGA and DTA measurements, magnetic susceptibility and TGA and DTA measurements, FAB mass, infrared, proton NMR, electronic absorption and emission spectra. The terbium complex is found to be monomer from the FAB mass spectrum. The IR and NMR spectra suggest neutral tridentate behaviour of the Schiff base. A coordination number seven is proposed around the metal ions. Emission spectra suggest C 3v , symmetry around the metal ion with capped octahedron geometry for the europium complex. (author)

Sequence and secondary structure of the mitochondrial small-subunit rRNA V4, V6, and V9 domains reveal highly species-specific variations within the genus Agrocybe.

Science.gov (United States)

Gonzalez, P; Labarère, J

1998-11-01

A comparative study of variable domains V4, V6, and V9 of the mitochondrial small-subunit (SSU) rRNA was carried out with the genus Agrocybe by PCR amplification of 42 wild isolates belonging to 10 species, Agrocybe aegerita, Agrocybe dura, Agrocybe chaxingu, Agrocybe erebia, Agrocybe firma, Agrocybe praecox, Agrocybe paludosa, Agrocybe pediades, Agrocybe alnetorum, and Agrocybe vervacti. Sequencing of the PCR products showed that the three domains in the isolates belonging to the same species were the same length and had the same sequence, while variations were found among the 10 species. Alignment of the sequences showed that nucleotide motifs encountered in the smallest sequence of each variable domain were also found in the largest sequence, indicating that the sequences evolved by insertion-deletion events. Determination of the secondary structure of each domain revealed that the insertion-deletion events commonly occurred in regions not directly involved in the secondary structure (i.e., the loops). Moreover, conserved sequences ranging from 4 to 25 nucleotides long were found at the beginning and end of each domain and could constitute genus-specific sequences. Comparisons of the V4, V6, and V9 secondary structures resulted in identification of the following four groups: (i) group I, which was characterized by the presence of additional P23-1 and P23-3 helices in the V4 domain and the lack of the P49-1 helix in V9 and included A. aegerita, A. chaxingu, and A. erebia; (ii) group II, which had the P23-3 helix in V4 and the P49-1 helix in V9 and included A. pediades; (iii) group III, which did not have additional helices in V4, had the P49-1 helix in V9 and included A. paludosa, A. firma, A. alnetorum, and A. praecox; and (iv) group IV, which lacked both the V4 additional helices and the P49-1 helix in V9 and included A. vervacti and A. dura. This grouping of species was supported by the structure of a consensus tree based on the variable domain sequences. The

Sb(III) and Sb(V) separation and analytical speciation by a continuous tandem on-line separation device in connection with inductively coupled plasma atomic emission spectrometry

Energy Technology Data Exchange (ETDEWEB)

Menendez Garcia, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Perez Rodriguez, M.C. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanchez Uria, J.F. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanz-Medel, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.

1995-09-01

A sensitive, precise and automated non-chromatographic method for Sb(III) and Sb(V) analytical speciation based on a continuous tandem on-line separation device in connection with inductively coupled plasma-atomic emission (ICP-AES) detection is proposed. Two on-line successive separation steps are included into this method: a continuous liquid-liquid extraction of Sb(III) with ammonium pyrrolidine dithiocarbamate (APDC) into methylisobuthylketone (MIBK), followed by direct stibine generation from the organic phase. Both separation steps are carried out in a continuous mode and on-line with the ICP-AES detector. Optimization of experimental conditions for the tandem separation and ICP-AES detection are investigated in detail. Detection limits for Sb(III) were 3 ng.mL{sup -1} and for Sb(V) 8 ng.mL{sup -1}. Precisions observed are in the range {+-} 5%. The proposed methodology has been applied to Sb(III) and Sb(V) speciation in sea-water samples. (orig.)

The influence of motion control shoes on the running gait of mature and young females.

Science.gov (United States)

Lilley, Kim; Stiles, Vicky; Dixon, Sharon

2013-03-01

This study compared the running gait of mature and young females, and investigated the effect of a motion control shoe. First, it was hypothesised that in a neutral shoe, mature females would display significantly greater rearfoot eversion, knee internal rotation and external adductor moments when compared to a younger group. Secondly, the motion control shoe would reduce rearfoot eversion and knee internal rotation in both groups. Thirdly it was hypothesised that the motion control shoe would increase knee external adductor moment, through an increase in knee varus and moment arm. 15 mature (40-60 years) and 15 young (18-25 years) females performed 10 running trials at 3.5ms(-1)±5% over a force platform. Two shoes were tested, the Adidas Supernova Glide (neutral), and the Adidas Supernova Sequence (motion control). Ankle and knee joint dynamics were analysed for the right leg, and the mean of ten trials was calculated. Joint moments were calculated using inverse dynamics. In the neutral condition, mature females presented greater peak rearfoot eversion, knee internal rotation, and external adductor moments than young females (p<0.05). A motion control shoe significantly reduced peak rearfoot eversion and knee internal rotation among both groups (p<0.05). No between shoe differences in knee external adductor moment were observed. A motion control shoe is recommended to reduce risk of injury associated with rearfoot eversion and knee internal rotation in mature females. However since the knee external adductor moment is a variable commonly associated with medial knee loading it is suggested that alternative design features are required to influence this moment. Copyright © 2012 Elsevier B.V. All rights reserved.

Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

Science.gov (United States)

Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

2017-08-07

A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

Complexes of 4-chlorophenoxyacetates of Nd(III), Gd(III) and Ho(III)

International Nuclear Information System (INIS)

Ferenc, W.; Bernat, M; Gluchowska, H.W.; Sarzynski, J.

2010-01-01

The complexes of 4-chlorophenoxyacetates of Nd(III), Gd(III) and Ho(III) have been synthesized as polycrystalline hydrated solids, and characterized by elemental analysis, spectroscopy, magnetic studies and also by X-ray diffraction and thermogravimetric measurements. The analysed complexes have the following colours: violet for Nd(III), white for Gd(III) and cream for Ho(III) compounds. The carboxylate groups bind as bidentate chelating (Ho) or bridging ligands (Nd, Gd). On heating to 1173K in air the complexes decompose in several steps. At first, they dehydrate in one step to form anhydrous salts, that next decompose to the oxides of respective metals. The gaseous products of their thermal decomposition in nitrogen were also determined and the magnetic susceptibilities were measured over the temperature range of 76-303K and the magnetic moments were calculated. The results show that 4-chlorophenoxyacetates of Nd(III), Gd(III) and Ho(III) are high-spin complexes with weak ligand fields. The solubility value in water at 293K for analysed 4-chlorophenoxyacetates is in the order of 10 -4 mol/dm 3 . (author)

Progress report: The Energy and Industry Subgroup of IPCC Working Group III

International Nuclear Information System (INIS)

Yokobori, Keiichi

1990-01-01

The Intergovernmental Panel on Climate Change (IPCC) was established in November 1988 under the joint auspices of UNEP and the World Meteorological Organization (WMO). Working Group III, or the Response Strategies Working Group (RSWG), was established to formulate strategies to respond to challenges arising from global climate warming. The Energy and Industry Subgroup (EIS) was created by the RSWG at its meeting in January-February 1989 to facilitate the formulation of strategies to control, i.e. prevent or reduce, the accumulation of greenhouse gases (GHGs) such as CO 2 , CFCs, NO 2 , CH, etc. The following article gives a brief summary of EIS activities, based mainly on records of discussion at the relevant meetings. (author). 1 tab

Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

International Nuclear Information System (INIS)

Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

2006-01-01

Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

Elemental abundance analyses with DAO spectrograms: XXXII. HR 6455 (A3 III), δ Aqr (A3 V), η Lep (F2 V), and 1 Boo (A1 V)

Science.gov (United States)

Yüce, K.; Adelman, S. J.; Gulliver, A. F.; Hill, G.

2011-08-01

We examine the sharp-lined stars HR 6455 (A3 III, v sin i = 8.7 km s-1) and η Lep (F2 V, v sin i = 13.5 km s-1) as well as δ Aqr (A3 V, v sin i = 81 km s-1) and 1 Boo (A1 V, v sin i = 59 km s-1) to increase the number consistently analyzed A and F stars using high dispersion and high S/N (≥200) spectrograms obtained with CCD detectors at the long Coudé camera of the 1.22-m telescope of the Dominion Astrophysical Observatory. Such studies contribute to understanding systematic abundance differences between normal and non-magnetic main-sequence band chemically peculiar A and early F stars. LTE fine analyses of HR 6455, δ Aqr, and 1 Boo using Kurucz's ATLAS suite programs show the same general elemental abundance trends with differences in the metal richness. Light and iron-peak element abundances are generally solar or overabundant while heavy element and rare earth element abundances are overabundant. HR 6455 is an evolved Am star while δ Aqr and 1 Boo show the phenomenon to different extents. Most derived abundances of η Lep are solar. Table 3 is available at the CDS via http://cdsarc.u-strasbg.fr/cgi-bin/qcat?J/AN/332/681

Physicochemical properties of aluminium alloys with elements of II and III groups of periodic table

International Nuclear Information System (INIS)

Eshov, B.B.

2016-01-01

The purpose of the present work is to establish the mechanism and regularities of changes of physicochemical properties of binary and multicomponent aluminium alloys with elements of II and III groups of periodic table as well as optimization and elaboration of new alloys.

X-ray absorption spectroscopy as a tool investigating arsenic(III) and arsenic(V) sorption by an aluminum-based drinking-water treatment residual.

Science.gov (United States)

Makris, Konstantinos C; Sarkar, Dibyendu; Parsons, Jason G; Datta, Rupali; Gardea-Torresdey, Jorge L

2009-11-15

Historic applications of arsenical pesticides to agricultural land have resulted in accumulation of residual arsenic (As) in such soils. In situ immobilization represents a cost-effective and least ecological disrupting treatment technology for soil As. Earlier work in our laboratory showed that drinking-water treatment residuals (WTRs), a low-cost, waste by-product of the drinking-water treatment process exhibit a high affinity for As. Wet chemical experiments (sorption kinetics and desorption) were coupled with X-ray absorption spectroscopy measurements to elucidate the bonding strength and type of As(V) and As(III) sorption by an aluminum-based WTR. A fast (1h), followed by a slower sorption stage resulted in As(V) and As(III) sorption capacities of 96% and 77%, respectively. Arsenic desorption with a 5mM oxalate from the WTR was minimal, being always absorption spectroscopy data showed inner-sphere complexation between As and surface hydroxyls. Reaction time (up to 48h) had no effect on the initial As oxidation state for sorbed As(V) and As(III). A combination of inner-sphere bonding types occurred between As and Al on the WTR surface because mixed surface geometries and interatomic distances were observed.

EMOTIONAL MATURITY OF PERSONALITY: THE PRACTICAL PROBLEM OF PSYCHOLOGICAL DIAGNOSIS

Directory of Open Access Journals (Sweden)

O. I. Afonina

2013-03-01

Full Text Available In the dif?cult conditions of the contemporary society which are far from being favorable to maintain one’s emotional and physical health the problem of development and achievement of emotional maturity as a factor of the well-being is getting more signi?cant. Based on the theoretical concepts of different scientists who de?ned the construct of emotional maturity three groups of psychological methods for assessing emotional maturity are analyzed. The ?rst group includes the methods that are used to assess emotional maturity explicitly and have a theoretical or empirical veri?cation. The second group includes the methods that are intended to assess emotional maturity as a separate scale complimented by other scales, related to evaluating other aspects of emotionality in  the  structure  of  the  personality.  The  third  group  includes  the  methods  in  which  emotional maturity is mentioned in the description of other psychic phenomena, or in the interpretation of certain factors (scales. Psychodiagnostic methods studying different parameters depending on the theoretical concepts of the authors about the structure and content of the emotional maturity of the personality make references to concepts of emotional development, consciousness, cognitive and volitional capacities of the personality and the coping strategies the individual prefer to use. The problem of developing valid and reliable psychodiagnostic methods of studying emotional maturity of the adult personality as a holistic phenomenon still awaits attention and retains its signi?cance.

Fast Photo-detection in Phototransistors based on Group III-VI Layered Materials.

Science.gov (United States)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

Response time of a photo detector is one of the crucial aspect of photo-detection. Recently it has been shown that direct band gap of few layered group III-VI materials helps in increased absorption of light thereby enhancing the photo responsive properties of these materials. Ternary system of Copper Indium Selenide has been extensively used in optoelectronics industry and it is expected that 2D layered structure of Copper Indium Selenide will be a key component of future optoelectronics devices based on 2D materials. Here we report fast photo detection in few layers of Copper Indium Selenide (CuIn7Se11) phototransistor. Few-layers of CuIn7Se11 flakes were exfoliated from crystals grown using chemical vapor transport technique. Our photo response characterization indicates responsivity of 104 mA/W with external quantum efficiency exceeding 103. We have found response time of few μs which is one of the fastest response among photodetectors based on 2D materials. We also found specific detectivity of 1012 Jones which is an order higher than conventional photodetectors. A comparison between response times of various layered group III-VI materials will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

A comparison of skeletal maturation in patients with tooth agenesis and unaffected controls assessed by the cervical vertebral maturation (CVM) index.

Science.gov (United States)

Casey, Christine; Gill, Daljit S; Jones, Steven P

2013-12-01

The aims of this study were to (1) investigate if there is a difference in skeletal maturation between tooth agenesis and control patients and (2) whether skeletal maturation is affected by the severity of tooth agenesis. The cervical vertebral maturation (CVM) index can be used to assess skeletal maturation. A retrospective cross-sectional study. Eastman Dental Hospital, London, UK. A total of 360 cephalograms of patients aged 9-17 years (164 males and 196 females) allocated to four subgroups (mild, moderate and severe tooth agenesis patients, and controls) were assessed retrospectively. There were 90 patients in each of the four subgroups. The skeletal maturation of each subject was assessed both quantitatively and qualitatively using the CVM index. All patients in the study were either currently receiving treatment or had been discharged from the hospital. There was no statistically significant relationship between skeletal maturation and the presence of tooth agenesis. Furthermore, there was no statistically significant relationship between the skeletal maturity of patients and different severities of tooth agenesis. The data obtained from this group of patients and using this measurement tool alone does not supply sufficient reason to reject the null hypothesis. However, it suggests that it is possible that no difference exists between the groups.

Stage-specific regulation of four HD-ZIP III transcription factors during polar pattern formation in Larix leptolepis somatic embryos.

Science.gov (United States)

Li, Shui-gen; Li, Wan-feng; Han, Su-ying; Yang, Wen-hua; Qi, Li-wang

2013-06-15

Polar auxin transport provides a developmental signal for cell fate specification during somatic embryogenesis. Some members of the HD-ZIP III transcription factors participate in regulation of auxin transport, but little is known about this regulation in somatic embryogenesis. Here, four HD-ZIP III homologues from Larix leptolepis were identified and designated LaHDZ31, 32, 33 and 34. The occurrence of a miR165/166 target sequence in all four cDNA sequences indicated that they might be targets of miR165/166. Identification of the cleavage products of LaHDZ31 and LaHDZ32 in vivo confirmed that they were regulated by miRNA. Their mRNA accumulation patterns during somatic embryogenesis and the effects of 1-N-naphthylphthalamic acid (NPA) on their transcript levels and somatic embryo maturation were investigated. The results showed that the four genes had higher transcript levels at mature stages than at the proliferation stage, and that NPA treatment down-regulated the mRNA abundance of LaHDZ31, 32 and 33 at cotyledonary embryo stages, but had no effect on the mRNA abundance of LaHDZ34. We concluded that these four members of Larix HD-ZIP III family might participate in polar auxin transport and the development of somatic embryos, providing new insights into the regulatory mechanisms of somatic embryogenesis. Copyright © 2013 Elsevier B.V. All rights reserved.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

Science.gov (United States)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Summary of the TeV33 working group

International Nuclear Information System (INIS)

Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

1996-10-01

This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling

Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

Energy Technology Data Exchange (ETDEWEB)

Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

2011-02-15

We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Correlation between Cervical Vertebral Maturation Stages and Dental Maturation in a Saudi Sample

Directory of Open Access Journals (Sweden)

Nayef H Felemban

2017-01-01

Full Text Available Background: The aim of the present study was to compare the cervical vertebra maturation stages method and dental maturity using tooth calcification stages. Methods: The current study comprised of 405 subjects selected from orthodontic patients of Saudi origin coming to clinics of the specialized dental centers in western region of Saudi Arabia. Dental age was assessed according to the developmental stages of upper and lower third molars and skeletal maturation according to the cervical vertebrae maturation stage method. Statistical analysis was done using Kruskal-Wallis H, Mann-Whitney U test, Chi-Square test; t-test and Spearman correlation coefficient for inter group comparison. Results: The females were younger than males in all cervical stages. The CS1-CS2 show the period before the peak of growth, during CS3-CS5 it’s the pubertal growth spurt and CS6 is the period after the peak of the growth. The mean age and standard deviation for cervical stages of CS2, CS3 and CS4 were 12.09 ±1.72 years, 13.19 ±1.62 and 14.88 ±1.52 respectively. The Spearman correlation coefficients between cervical vertebrae and dental maturation were between 0.166 and 0.612, 0.243 and 0.832 for both sexes for upper and lower third molars. The significance levels for all coefficients were equal at 0.01 and 0.05. Conclusion: The results of this study showed that the skeletal maturity increased with the increase in dental ages for both genders. An early rate of skeletal maturation stage was observed in females. This study needs further analysis using a larger sample covering the entire dentition.

Search for evidence of Type-III seesaw mechanism in multilepton final states in pp collisions at $\\sqrt{s} = 13~\\mathrm{TeV}$

CERN Document Server

CMS Collaboration

2017-01-01

A search for a type-III seesaw signal in events with three or more electrons or muons is presented. The data sample corresponds to $35.9~\\mathrm{fb}^{-1}$ of integrated luminosity in pp collisions at $\\sqrt{s} = 13~\\mathrm{TeV}$ collected by the CMS experiment at the LHC in 2016. The signal is sought after in final states with at least three leptons, and has diverse kinematic properties. The primary selection is based on the number of leptons and the invariant mass of opposite-sign lepton pairs, and helps discriminate the signal against the standard model background. The final optimization for the type-III seesaw signal is based on the sum of leptonic transverse momenta and missing transverse energy, as well as the transverse mass. The observations are consistent with expectations from standard model processes. The results are used to exclude heavy fermions of the type-III seesaw model with masses below $850~\\mathrm{GeV}$ for the lepton-flavor democratic scenario.

Indeks Penilaian Kematangan (Maturity Manajemen Keamanan Layanan TI

Directory of Open Access Journals (Sweden)

Farroh Sakinah

2014-09-01

Full Text Available Pemanfaatan Teknologi Informasi (TI dalam mendukung terselenggaranya pelayanan yang optimal menjadi kebutuhan utama organisasi saat ini. Jaminan pengelolaan layanan dan keamanan yang baik menjadi salah satu tolok ukurnya. Pengimplementasian sebuah standar menjadi salah satu solusinya meskipun penggunaan satu buah standar dirasa belum maksimal melihat cakupan yang disediakan kurang luas sehingga diadakannya upaya penggabungan beberapa standar dengan harapan standar-standar tersebut dapat saling melengkapi. Pengimplementasian beberapa standar ini dapat dimonitoring tingkat kematangannya (maturity dengan menggunakan alat ukur penilaian kematangan (maturity. Alat ukur kematangan (maturity manajemen keamanan layanan ini merupakan gabungan pemetaan dari control objective IT Governance COBIT 4.1 yang dipenuhi kebutuhan manajemen layanannya sesuai dengan Service Management di dalam ITIL v3 (Information Technology Infrastructure Library. Selanjutnya kebutuhan manajemen layanan ini diukur dengan maturity level COBIT 4.1 dan disesuaikan dengan framework ISO 27000 untuk memaksimalkan manajemen keamanan informasi.

New software for cervical vertebral geometry assessment and its relationship to skeletal maturation--a pilot study.

Science.gov (United States)

Santiago, R C; Cunha, A R; Júnior, G C; Fernandes, N; Campos, M J S; Costa, L F M; Vitral, R W F; Bolognese, A M

2014-01-01

In the present study, we developed new software for quantitative analysis of cervical vertebrae maturation, and we evaluated its applicability through a multinomial logistic regression model (MLRM). Digitized images of the bodies of the second (C2), third (C3) and fourth (C4) cervical vertebrae were analysed in cephalometric radiographs of 236 subjects (116 boys and 120 girls) by using a software developed for digitized vertebrae analysis. The sample was initially distributed into 11 categories according to the Fishman's skeletal maturity indicators and were then grouped into four stages for quantitative cervical maturational changes (QCMC) analysis (QCMC I, II, III and IV). Seven variables of interest were measured and analysed to identify morphologic alterations of the vertebral bodies in each QCMC category. Statistically significant differences (p cervical vertebrae maturation categories was constructed by taking into account gender, chronological age and four variables determined by digitized vertebrae analysis (Ang_C3, MP_C3, MP_C4 and SP_C4). The MLRM presented a predictability of 81.4%. The weighted κ test showed almost perfect agreement (κ = 0.832) between the categories defined initially by the method of Fishman and those allocated by the MLRM. Significant alterations in the morphologies of the C2, C3 and C4 vertebral bodies that were analysed through the digitized vertebrae analysis software occur during the different stages of skeletal maturation. The model that combines the four parameters measured on the vertebral bodies, the age and the gender showed an excellent prediction.

Poincare group, SU(3) and V-A in leptonic decay

International Nuclear Information System (INIS)

Boehm, A.

1975-07-01

From as few assumptions as possible about the relations between the Poincare group, the particle classifying SU(3) and V-A we derive properties of the K/sub l 3 / and K/sub L 2 / decays. From the assumed relation between SU(3) and the Poincare group and the first class condition it follows that the formfactor ratio Xi of K/sub l 3 / decay is Xi = --0.57, and that a value of Xi = 0 is in disagreement with very general and well accepted theoretical assumptions. Assuming universality of V-A, the Cabibbo suppression is derived from the relations between SU(3) and V-A as a consequence of the brokenness of SU(3). (U.S.)

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Directory of Open Access Journals (Sweden)

N. Daix

2014-08-01

Full Text Available We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Energy Technology Data Exchange (ETDEWEB)

Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Science.gov (United States)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Correlation between dental maturity and cervical vertebral maturity.

Science.gov (United States)

Chen, Jianwei; Hu, Haikun; Guo, Jing; Liu, Zeping; Liu, Renkai; Li, Fan; Zou, Shujuan

2010-12-01

The aim of this study was to investigate the association between dental and skeletal maturity. Digital panoramic radiographs and lateral skull cephalograms of 302 patients (134 boys and 168 girls, ranging from 8 to 16 years of age) were examined. Dental maturity was assessed by calcification stages of the mandibular canines, first and second premolars, and second molars, whereas skeletal maturity was estimated by the cervical vertebral maturation (CVM) stages. The Spearman rank-order correlation coefficient was used to measure the association between CVM stage and dental calcification stage of individual teeth. The mean chronologic age of girls was significantly lower than that of boys in each CVM stage. The Spearman rank-order correlation coefficients between dental maturity and cervical vertebral maturity ranged from 0.391 to 0.582 for girls and from 0.464 to 0.496 for boys (P cervical vertebral maturation stage. The development of the mandibular second molar in females and that of the mandibular canine in males had the strongest correlations with cervical vertebral maturity. Therefore, it is practical to consider the relationship between dental and skeletal maturity when planning orthodontic treatment. Copyright © 2010 Mosby, Inc. All rights reserved.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

Effects of Crocin Supplementation during In Vitro Maturation of Mouse Oocytes on Glutathione Synthesis and Cytoplasmic Maturation

Directory of Open Access Journals (Sweden)

Elham Mokhber Maleki

2016-05-01

Full Text Available Background: Crocin is an active ingredient of saffron (Crocus sativus L. and its antioxidant properties have been previously investigated. This carotenoid scavenges free radicals and stimulates glutathione (GSH synthesis; consequently, it may protect cells against oxidative stress. The aim of this research is to protect oocytes from oxidative stress by the addition of a natural source antioxidant. Materials and Methods: In the present in vitro experimental study, we collected cumulus oocyte complexes (COCs from mouse ovaries of euthanized, 6-8 week-old female Naval Medical Research Institute (NMRI mice. Oocytes were subjected to in vitro maturation (IVM in the presence of either crocin (5 or 10 μg/ml, 5 mM buthionine-[S-R]- sulfoximine (BSO, or the combination of crocin plus BSO. Oocytes that matured in vitro in a medium without crocin or BSO supplements were considered as controls. Following 16-18 hours of IVM, matured oocytes (n=631 were fertilized by capacitated sperm from NMRI male mice, and cultured in vitro for up to 96 hours to assess preimplantation embryonic development. The levels of GSH in metaphase II (MII oocytes after IVM (n=240 were also assessed by the 5, 5-dithio-bis (2-nitrobenzoic acid (DTNB-GSH reductase recycling assay. Results: Supplementation of IVM media with 10 μg/ml crocin significantly (P<0.05 increased nuclear maturation, preimplantation development and GSH concentrations compared with the control group. Maturation of oocytes in IVM medium supplemented with BSO alone or the combination of 5 μg/ml crocin and BSO drastically decreased GSH concentrations and subsequently resulted in low rates of maturation, fertilization and blastocyst development. However, the combination of 10 μg/ml crocin with 5 mM BSO increased the level of nuclear maturation which was comparable to the control group. Conclusion: Supplementation of IVM media with crocin can improve nuclear maturation rates and subsequent developmental potential

Benchmarking of the 99-group ANSL-V library

International Nuclear Information System (INIS)

Wright, R.Q.; Ford, W.E. III; Greene, N.M.; Petrie, L.M.; Primm, R.T. III; Westfall, R.M.

1987-01-01

The purpose of this paper is to present thermal benchmark data testing results for the BAPL-1, TRX-1, and SEEP-1 lattices, using selected processed cross-sections from the ANSL-V 99-group library. 7 refs., 1 tab

EMOTIONAL MATURITY OF PERSONALITY: THE PRACTICAL PROBLEM OF PSYCHOLOGICAL DIAGNOSIS

OpenAIRE

O. I. Afonina

2013-01-01

In the dif?cult conditions of the contemporary society which are far from being favorable to maintain one’s emotional and physical health the problem of development and achievement of emotional maturity as a factor of the well-being is getting more signi?cant. Based on the theoretical concepts of different scientists who de?ned the construct of emotional maturity three groups of psychological methods for assessing emotional maturity are analyzed. The ?rst group includes the methods that are u...

Theory of Anion-Substituted Nitrogen-Bearing III-V Alloys

Science.gov (United States)

1998-07-20

was found by Zunger group). When more than 4% arsenic is incorporated into GaN in an ordered array, the band gap closes . Calculations of the...arsenic is incorporated into GaN in an ordered array, the band gap closes . Calculations of the properties of random alloys predict smaller bowing...BEARING lll-V ALLOYS Prepared by: M. A. Berding, Senior Research Physicist M. van Schilfgaarde, Senior Research Physicist A. Sher, Associate Director

Location of 3-hydroxyproline residues in collagen types I, II, III, and V/XI implies a role in fibril supramolecular assembly.

Science.gov (United States)

Weis, Mary Ann; Hudson, David M; Kim, Lammy; Scott, Melissa; Wu, Jiann-Jiu; Eyre, David R

2010-01-22

Collagen triple helices are stabilized by 4-hydroxyproline residues. No function is known for the much less common 3-hydroxyproline (3Hyp), although genetic defects inhibiting its formation cause recessive osteogenesis imperfecta. To help understand the pathogenesis, we used mass spectrometry to identify the sites and local sequence motifs of 3Hyp residues in fibril-forming collagens from normal human and bovine tissues. The results confirm a single, essentially fully occupied 3Hyp site (A1) at Pro(986) in A-clade chains alpha1(I), alpha1(II), and alpha2(V). Two partially modified sites (A2 and A3) were found at Pro(944) in alpha1(II) and alpha2(V) and Pro(707) in alpha2(I) and alpha2(V), which differed from A1 in sequence motif. Significantly, the distance between sites 2 and 3, 237 residues, is close to the collagen D-period (234 residues). A search for additional D-periodic 3Hyp sites revealed a fourth site (A4) at Pro(470) in alpha2(V), 237 residues N-terminal to site 3. In contrast, human and bovine type III collagen contained no 3Hyp at any site, despite a candidate proline residue and recognizable A1 sequence motif. A conserved histidine in mammalian alpha1(III) at A1 may have prevented 3-hydroxylation because this site in chicken type III was fully hydroxylated, and tyrosine replaced histidine. All three B-clade type V/XI collagen chains revealed the same three sites of 3Hyp but at different loci and sequence contexts from those in A-clade collagen chains. Two of these B-clade sites were spaced apart by 231 residues. From these and other observations we propose a fundamental role for 3Hyp residues in the ordered self-assembly of collagen supramolecular structures.

MRI quantitative assessment of brain maturation and prognosis in premature infants using total maturation score

International Nuclear Information System (INIS)

Qi Ying; Wang Xiaoming

2009-01-01

Objective: To quantitatively assess brain maturation and prognosis in premature infants on conventional MRI using total maturation score (TMS). Methods: Nineteen cases of sequelae of white matter damage (WMD group )and 21 cases of matched controls (control group) in premature infants confirmed by MRI examinations were included in the study. All cases underwent conventional MR imaging approximately during the perinatal period after birth. Brain development was quantitatively assessed using Childs AM's validated scoring system of TMS by two sophisticated radiology physicians. Interobserver agreement and reliability was evaluated by using intraclass correlation (ICC). Linear regression analysis between TMS and postmenstrual age (PMA) was made(Y: TMS, X: PMA). Independent-sample t test of the two groups' TMS was made. Results: Sixteen of 19 cases revealed MRI abnormalities. Lesions showing T 1 and T 2 shortening tended to occur in clusters or a linear pattern in the deep white matter of the centrum semiovale, periventricular white matter. Diffusion-weighted MR image (DWI) showed 3 cases with greater lesions and 4 cases with new lesions in corpus callosum. There was no abnormality in control group on MRI and DWI. The average numbers of TMS between the two observers were 7.13±2.27, 7.13±2.21. Interobservcer agreement was found to be high (ICC=0.990, P 2 =0.6401,0.5156 respectively, P 0.05). Conclusion: Conventional MRI is able to quantify the brain maturation and prognosis of premature infants using TMS. (authors)

Separation of yttrium (III) from lanthanoids (III) by solvent extraction with substituted N-Alkylcarbonyl-N-phenylhydroxylamines

International Nuclear Information System (INIS)

Haraguchi, K.; Ogata, T.; Nakagawa, K.; Saitoh, T.; Kamidate, T.; Watanabe, H.

1996-01-01

A series of substituted N-alkylcarbonyl-N-phenylhydroxylamines(R-PHAs) were synthesized and utilized for the extraction of yttrium(III) and lanthanoids(III) in order to obtain effective extractants for the separation of yttrium(III) from the lanthanoids(III) and the mutual separation of the lanthanoids(III). The distribution ratio of yttrium(III) and the lanthanoids(III) between the carbon tetrachloride and the aqueous phases was measured as functions of the pH and the extractant concentration at 298 K at an ionic strength of 0.1 (NaNO 3 ). Yttrium(III) and the lanthanoids(III) were extracted with R-PHAs(HL) as self-adducted chelates of the form, ML 3 (HL) x , where 'x' is 1, 2 or 3 depending on the extraction system. The extractability of the metal ions decreased in the order of R-PHA having a primary, a secondary and a tertiary alkyl substituent attached to the carbonyl group because of the steric hindrance of the alkyl group. The separation factors for both Yb/Eu and Yb/Y pairs increased with increasing branching of the alkyl group of R-PHA. The excellent selectivity of R-PHAs having a tertiary alkyl group was attributable to a greater inductive effect of the tertiary alkyl group than those of the primary and secondary alkyl groups. The substituents at the phenyl group of R-PHAs gave no significant effect on the selectivity, while the extractability was enhanced considerably by introduction of electron withdrawing substituents at appropriate positions of the phenyl group of R-PHAs. (authors)

Neutron capture therapy of epidermal growth factor receptor (EGFR)vIII positive gliomas using boronated monoclonal antibody L8A4

International Nuclear Information System (INIS)

Yang, Weilian; Barth, Rolf F.; Wu, Gong

2006-01-01

The purpose of the present study was to evaluate the EGFRvIII specific monoclonal antibody, L8A4 as a boron delivery agent for NCT of the receptor (+) rat glioma, F98 npEGFRvIII . A heavily boronated polyamidoamine (PAMAM) dendrimer (BD) was linked to L8A4 by means of heterobifunctional reagents. Wild type (F98 WT ) receptor(-) or EGFRvIII human gene transfected receptor(+) F98 npEGFRvIII glioma cells were implanted into the brains of Fischer rats. Biodistribution studies were initiated 14 d later. Animals received 125 I-labeled BD-L8A4 by either convection enhanced delivery (CED) or intratumoral(i.t.) injection and were euthanized 6, 12, 24 or 48 h later. At 6 h following CED, equivalent amounts of the bioconjugate were detected in receptor(+) and (-) tumors, but by 24 h the amounts retained by receptor(+) gliomas were 60.1% following CED and 43.7% following i.t. injection, compared to 14.6% ID/g by receptor(-) tumors. Tumor boron concentrations were 32.7 and 44.5 μg/g, respectively, for BD-L8A4 alone or in combination with i.v. BPA. BNCT was carried out at the MITR-II Reactor 24 h after CED of BD-L8A4 (∼40 μg 10 B/∼750 μg protein) and 2.5 h after i.v. injection of BPA (500 mg/kg). Rats that received BD-L8A4 alone or in combination with BPA had mean survival times of 70.4 and 85d, respectively, with 20% and 10% long term survivors, respectively, compared to 40.1 d for i.v. BPA and 30.3 and 26.3 d for irradiated and untreated controls, respectively. These data convincingly demonstrate the therapeutic efficacy of molecular targeting of EGFRvIII and should provide a platform for the future development of combinations of high and low molecular weight delivery agents for BNCT of brain tumors. (author)

III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

Energy Technology Data Exchange (ETDEWEB)

Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

2011-07-01

III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

Speciation of As(III), As(V), MMA and DMA in contaminated soil extracts by HPLC-ICP/MS

Energy Technology Data Exchange (ETDEWEB)

Bissen, M.; Frimmel, F.H. [Engler-Bunte-Institut, Univ. Karlsruhe (Germany)

2000-05-01

A method to separate and quantify two inorganic arsenic species As(III) and As(V) and two organic arsenic species, monomethylarsonic acid (MMA) and dimethylarsinic acid (DMA), by HPLC-ICP/MS has been developed. The separation of arsenic species was achieved on the anionic exchange column IonPac {sup trademark} AS11 (Dionex) with NaOH as mobile phase. The technique was successfully applied to analyze extracts of two contaminated soils, sampled at a former tannery site (soil 1) and a former paint production site (soil 2). The soils were extracted at pH values similar to the natural environment. Extractions were performed at different pH values with 0.3 M ammonium oxalate (pH = 3), milli-Q water (pH = 5.8), 0.3 M sodium carbonate (pH = 8) and 0.3 M sodium bicarbonate (pH = 11). No organically bound arsenic was found in the extracts. As(V) was the major component. Only up to 0.04% of the total arsenic contained in soil 1 were mobilized. The highest amount of extracted arsenic was found at the highest pH. In the milli-Q water extract of soil 1 As(III) and As(V) were found. High amounts of As(V) were found in the extracts of soil 2. Up to 20% of the total arsenic bound to soil 2 constituents were released. The results show that the mobilization of arsenic depended on the pH value of the extraction solution and the kind of extracted soil. Dramatic consequences have to be expected for pH changes in the environment especially in cases where soils contain high amounts of mobile arsenic. (orig.)

Mesenchymal Stem Cell-Conditioned Medium Modulates Apoptotic and Stress-Related Gene Expression, Ameliorates Maturation and Allows for the Development of Immature Human Oocytes after Artificial Activation

Directory of Open Access Journals (Sweden)

Hakimeh Akbari

2017-12-01

Full Text Available The aim of the present study was to determine whether mesenchymal stem cell-conditioned medium (MSC-CM modulates apoptotic and stress-related gene expression, and ameliorates maturation and developmental potential of immature human oocytes after artificial activation. A total of 247 surplus immature germinal vesicle (GV oocytes obtained from infertile women were allocated into two in vitro maturation (IVM groups: 1: GV oocytes (n = 116 matured in vitro (fIVM, and 2: GV oocytes (n = 131 that were vitrified, then in vitro matured (vIVM. Also, two maturation media were used: Alpha-minimum essential medium (α-MEM and human umbilical cord-derived MSCs (hUCM. After 36 h of incubation, the IVM oocytes were examined for nuclear maturation. In IVM-matured oocytes, cytoplasmic maturation was evaluated after artificial activation through Ionomycin. Moreover, the quantitative expressions of B-cell CLL/lymphoma 2 (BCL2, BCL2-associated X protein (BAX, superoxide dismutase (SOD, and Heat shock proteins (HSP70 in matured oocytes were assessed by quantitative Real-time polymerase chain reaction (qRT-PCR and compared with fresh and vitrified in vivo matured oocytes, which were used as fIVM and vIVM controls, respectively. The highest maturation rate was found in hUCM in fIVM, and the lowest maturation rate was found using α-MEM in vIVM (85.18% and 71.42%, respectively. The cleavage rate in fIVM was higher than that in vIVM (83.4% vs. 72.0%. In addition, the cleavage rate in α-MEM was lower than that in the hUCM (66.0% vs. 89.4%. Furthermore, the difference between parthenote embryo arrested in 4–8 cells (p < 0.04 and the quality of embryo arrested in 8-cell (p < 0.007 were significant. The developmental stages of parthenote embryos in hUCM versus α-MEM were as follows: 2–4 cell (89.45% vs. 66.00%, respectively, 4–8 cell (44.31% vs. 29.11%, respectively, morula (12.27% vs. 2.63%, respectively, and blastocysts (2.5% vs. 0%, respectively. The messenger

Procykličnost v Basel II a Basel III

OpenAIRE

Šobotníková, Petra

2011-01-01

The term procyclicality refers to the ability of a system to amplify business cycles. The recent financial crisis has revealed that the current regulatory framework, Basel II, affects the business cycle in exactly that manner. The newly published Basel III therefore sought to include tools that would mitigate the procyclical nature of regulatory framework. The aim of the thesis is to analyze whether such tools are effective and whether the procyclicality under Basel III has been mitigated whe...

Selumetinib in Combination With Dacarbazine in Patients With Metastatic Uveal Melanoma: A Phase III, Multicenter, Randomized Trial (SUMIT).

Science.gov (United States)

Carvajal, Richard D; Piperno-Neumann, Sophie; Kapiteijn, Ellen; Chapman, Paul B; Frank, Stephen; Joshua, Anthony M; Piulats, Josep M; Wolter, Pascal; Cocquyt, Veronique; Chmielowski, Bartosz; Evans, T R Jeffry; Gastaud, Lauris; Linette, Gerald; Berking, Carola; Schachter, Jacob; Rodrigues, Manuel J; Shoushtari, Alexander N; Clemett, Delyth; Ghiorghiu, Dana; Mariani, Gabriella; Spratt, Shirley; Lovick, Susan; Barker, Peter; Kilgour, Elaine; Lai, Zhongwu; Schwartz, Gary K; Nathan, Paul

2018-04-20

Purpose Uveal melanoma is the most common primary intraocular malignancy in adults with no effective systemic treatment option in the metastatic setting. Selumetinib (AZD6244, ARRY-142886) is an oral, potent, and selective MEK1/2 inhibitor with a short half-life, which demonstrated single-agent activity in patients with metastatic uveal melanoma in a randomized phase II trial. Methods The Selumetinib (AZD6244: ARRY-142886) (Hyd-Sulfate) in Metastatic Uveal Melanoma (SUMIT) study was a phase III, double-blind trial ( ClinicalTrial.gov identifier: NCT01974752) in which patients with metastatic uveal melanoma and no prior systemic therapy were randomly assigned (3:1) to selumetinib (75 mg twice daily) plus dacarbazine (1,000 mg/m 2 intravenously on day 1 of every 21-day cycle) or placebo plus dacarbazine. The primary end point was progression-free survival (PFS) by blinded independent central radiologic review. Secondary end points included overall survival and objective response rate. Results A total of 129 patients were randomly assigned to receive selumetinib plus dacarbazine (n = 97) or placebo plus dacarbazine (n = 32). In the selumetinib plus dacarbazine group, 82 patients (85%) experienced a PFS event, compared with 24 (75%) in the placebo plus dacarbazine group (median, 2.8 v 1.8 months); the hazard ratio for PFS was 0.78 (95% CI, 0.48 to 1.27; two-sided P = .32). The objective response rate was 3% with selumetinib plus dacarbazine and 0% with placebo plus dacarbazine (two-sided P = .36). At 37% maturity (n = 48 deaths), analysis of overall survival gave a hazard ratio of 0.75 (95% CI, 0.39 to 1.46; two-sided P = .40). The most frequently reported adverse events (selumetinib plus dacarbazine v placebo plus dacarbazine) were nausea (62% v 19%), rash (57% v 6%), fatigue (44% v 47%), diarrhea (44% v 22%), and peripheral edema (43% v 6%). Conclusion In patients with metastatic uveal melanoma, the combination of selumetinib plus dacarbazine had a tolerable safety

Silicon, germanium, and III-V-based tunneling devices for low-power applications

Science.gov (United States)

Smith, Joshua T.

While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

CSRL-V: processed ENDF/B-V 227-neutron-group and pointwise cross-section libraries for criticality safety, reactor, and shielding studies

International Nuclear Information System (INIS)

Ford, W.E. III; Diggs, B.R.; Petrie, L.M.; Webster, C.C.; Westfall, R.M.

1982-01-01

A P 3 227-neutron-group cross-section library has been processed for the subsequent generation of problem-dependent fine- or broad-group cross sections for a broad range of applications, including shipping cask calculations, general criticality safety analyses, and reactor core and shielding analyses. The energy group structure covers the range 10 -5 eV - 20 MeV, including 79 thermal groups below 3 eV. The 129-material library includes processed data for all materials in the ENDF/B-V General Purpose File, several data sets prepared from LENDL data, hydrogen with water- and polyethyelene-bound thermal kernels, deuterium with C 2 O-bound thermal kernels, carbon with a graphite thermal kernel, a special 1/V data set, and a dose factor data set. The library, which is in AMPX master format, is designated CSRL-V (Criticality Safety Reference Library based on ENDF/B-V data). Also included in CSRL-V is a pointwise total, fission, elastic scattering, and (n,γ) cross-section library containing data sets for all ENDF/B-V resonance materials. Data in the pointwise library were processed with the infinite dilute approximation at a temperature of 296 0 K

Selective Phosphonylation of 5'-Adenosine Monophosphate (5'-AMP) via Pyrophosphite [PPi(III)].

Science.gov (United States)

Kaye, Karl; Bryant, David E; Marriott, Katie E R; Ohara, Shohei; Fishwick, Colin W G; Kee, Terence P

2016-11-01

We describe here experiments which demonstrate the selective phospho-transfer from a plausibly prebiotic condensed phosphorus (P) salt, pyrophosphite [H 2 P 2 O 5 2- ; PPi(III)], to the phosphate group of 5'-adenosine mono phosphate (5'-AMP). We show further that this P-transfer process is accelerated both by divalent metal ions (M 2+ ) and by organic co-factors such as acetate (AcO - ). In this specific case of P-transfer from PPi(III) to 5'-AMP, we show a synergistic enhancement of transfer in the combined presence of M 2+ & AcO - . Isotopic labelling studies demonstrate that hydrolysis of the phosphonylated 5'-AMP, [P(III)P(V)-5'-AMP], proceeds via nuceophilic attack of water at the Pi(III) terminus.

The Tomato U-Box Type E3 Ligase PUB13 Acts With Group III Ubiquitin E2 Enzymes to Modulate FLS2-Mediated Immune Signaling

Directory of Open Access Journals (Sweden)

Bangjun Zhou

2018-05-01

Full Text Available In Arabidopsis and rice, the ubiquitin ligase PUB13-mediated protein degradation plays a significant role in plant pattern-triggered immunity (PTI and flowering time control. The Arabidopsis PUB13 has been shown to attenuate the pattern recognition receptor FLS2-mediated immune signaling by ubiquitinating FLS2 and consequently promoting its degradation by the 26S proteasome. Nevertheless, the cognate ubiquitin-conjugating enzymes (E2 with which PUB13 acts to modulate FLS2-mediated PTI are unknown. To address this question, we investigate here the tomato (Solanum lycopersicum homolog of PUB13, SlPUB13 by utilizing the recently characterized complete set of tomato E2s. Of the 13 groups of tomato E2s, only members in group III are found to interact and act with SlPUB13. Knocking-down of the group III E2 genes enhances callose deposition and induction of the RbohB gene in the immunity-associated, early oxidative burst after flg22 treatment. The group III E2s are also found to work with SlPUB13 to ubiquitinate FLS2 in vitro and are required for PUB13-mediated degradation of FLS2 in vivo upon flg22 treatment, suggesting an essential role for group III E2s in the modulation of FLS2-mediated immune signaling by PUB13. Additionally, another immunity-associated E3, NtCMPG1 is shown to also work specifically with members of group III E2 in the in vitro ubiquitination assay, which implies the group III E2 enzymes may cooperate with many E3 ligases to regulate different aspects of PTI. Taken together, these data corroborate the notion that group III E2 enzymes play an important role in PTI and build a foundation for further functional and mechanistic characterization of tomato PUB13.

Biotransformation of As (III to As (V and their stabilization in soil with Bacillus sp. XS2 isolated from gold mine tailing of Xinjiang, China

Directory of Open Access Journals (Sweden)

Santosh Kumar Karn

2016-09-01

Full Text Available Xinjiang province is one of the most polluted region in China, this region affected by multi-metal problem, especially arsenic (As affect very badly. Two major forms of As present in the environment As (III and As (V as compared to As (V, As (III is much more toxic. Our aim is to remediate As (III contaminated soil by using As (III resistant microbe, having the high transforming ability for As (III to As (V. An As (III oxidizing bacterium Bacillus sp. XS2, isolated and selected from gold mine tailing which have shown high resistance up to 6400 mg L−1 and efficiently transformed up to 4000 mg L−1 in sucrose low phosphate medium (SLP, higher than any of the previous reported Bacillus sp.. In soil, we found that XS2 successfully transformed up to 81% of soluble exchangeable fraction within 10 d in contaminated soil (with 500 mg kg−1, which makes it potential microbe for the removal of contaminated site with arsenic in the environment. Further XS2 was characterized for their molecular basis of resistance and we establish that XS2 having arsenic oxidase enzyme activity which is accountable for the detoxification of arsenic at high concentration and provide resistance to the bacterium. Gene encoding arsenic oxidase (aioA-gene was also amplified from this bacterium using polymerase chain reaction (PCR with degenerate primer. The aioA-gene is specific for the arsenite-oxidizing bacteria. The deduced amino acid sequence had shown 42% similarity with pseudomonas sp. arsenic oxidase. Further, the strain was characterized by 16s rRNA gene sequence analysis and shown maximum similarity with Bacillus sp.

International Working Group on Past Reactors Thirteenth Annual Meeting. Summary Report. Part III

International Nuclear Information System (INIS)

1981-04-01

The Thirteenth Annual Meeting of the IAEA International Working Group on Fast Reactors was held at the IAEA Headquarters, Vienna, Austria from 9 to 11 April 1980. The Summary Report (Part I) contains the Minutes of the Meeting. The Summary Report (Part II) contains the papers which review the national programme in the field of LMFBRs and other presentations at the Meeting. The Summary Report (Part III) contains the discussions on the review of the national programmes

Search for evidence of the type-III seesaw mechanism in multilepton final states in proton-proton collisions at $ \\sqrt{s} = $ 13 TeV

CERN Document Server

Sirunyan, Albert M; CMS Collaboration; Adam, Wolfgang; Ambrogi, Federico; Asilar, Ece; Bergauer, Thomas; Brandstetter, Johannes; Brondolin, Erica; Dragicevic, Marko; Erö, Janos; Flechl, Martin; Friedl, Markus; Fruehwirth, Rudolf; Ghete, Vasile Mihai; Grossmann, Johannes; Hrubec, Josef; Jeitler, Manfred; König, Axel; Krammer, Natascha; Krätschmer, Ilse; Liko, Dietrich; Madlener, Thomas; Mikulec, Ivan; Pree, Elias; Rabady, Dinyar; Rad, Navid; Rohringer, Herbert; Schieck, Jochen; Schöfbeck, Robert; Spanring, Markus; Spitzbart, Daniel; Waltenberger, Wolfgang; Wittmann, Johannes; Wulz, Claudia-Elisabeth; Zarucki, Mateusz; Chekhovsky, Vladimir; Mossolov, Vladimir; Suarez Gonzalez, Juan; De Wolf, Eddi A; Di Croce, Davide; Janssen, Xavier; Lauwers, Jasper; Van Haevermaet, Hans; Van Mechelen, Pierre; Van Remortel, Nick; Abu Zeid, Shimaa; Blekman, Freya; D'Hondt, Jorgen; De Bruyn, Isabelle; De Clercq, Jarne; Deroover, Kevin; Flouris, Giannis; Lontkovskyi, Denys; Lowette, Steven; Moortgat, Seth; Moreels, Lieselotte; Python, Quentin; Skovpen, Kirill; Tavernier, Stefaan; Van Doninck, Walter; Van Mulders, Petra; Van Parijs, Isis; Brun, Hugues; Clerbaux, Barbara; De Lentdecker, Gilles; Delannoy, Hugo; Fasanella, Giuseppe; Favart, Laurent; Goldouzian, Reza; Grebenyuk, Anastasia; Karapostoli, Georgia; Lenzi, Thomas; Luetic, Jelena; Maerschalk, Thierry; Marinov, Andrey; Randle-conde, Aidan; Seva, Tomislav; Vander Velde, Catherine; Vanlaer, Pascal; Vannerom, David; Yonamine, Ryo; Zenoni, Florian; Zhang, Fengwangdong; Cimmino, Anna; Cornelis, Tom; Dobur, Didar; Fagot, Alexis; Gul, Muhammad; Khvastunov, Illia; Poyraz, Deniz; Roskas, Christos; Salva Diblen, Sinem; Tytgat, Michael; Verbeke, Willem; Zaganidis, Nicolas; Bakhshiansohi, Hamed; Bondu, Olivier; Brochet, Sébastien; Bruno, Giacomo; Caudron, Adrien; De Visscher, Simon; Delaere, Christophe; Delcourt, Martin; Francois, Brieuc; Giammanco, Andrea; Jafari, Abideh; Komm, Matthias; Krintiras, Georgios; Lemaitre, Vincent; Magitteri, Alessio; Mertens, Alexandre; Musich, Marco; Piotrzkowski, Krzysztof; Quertenmont, Loic; Vidal Marono, Miguel; Wertz, Sébastien; Beliy, Nikita; Aldá Júnior, Walter Luiz; Alves, Fábio Lúcio; Alves, Gilvan; Brito, Lucas; Correa Martins Junior, Marcos; Hensel, Carsten; Moraes, Arthur; Pol, Maria Elena; Rebello Teles, Patricia; Belchior Batista Das Chagas, Ewerton; Carvalho, Wagner; Chinellato, Jose; Custódio, Analu; Melo Da Costa, Eliza; Da Silveira, Gustavo Gil; De Jesus Damiao, Dilson; Fonseca De Souza, Sandro; Huertas Guativa, Lina Milena; Malbouisson, Helena; Melo De Almeida, Miqueias; Mora Herrera, Clemencia; Mundim, Luiz; Nogima, Helio; Santoro, Alberto; Sznajder, Andre; Tonelli Manganote, Edmilson José; Torres Da Silva De Araujo, Felipe; Vilela Pereira, Antonio; Ahuja, Sudha; Bernardes, Cesar Augusto; Tomei, Thiago; De Moraes Gregores, Eduardo; Mercadante, Pedro G; Novaes, Sergio F; Padula, Sandra; Romero Abad, David; Ruiz Vargas, José Cupertino; Aleksandrov, Aleksandar; Hadjiiska, Roumyana; Iaydjiev, Plamen; Misheva, Milena; Rodozov, Mircho; Shopova, Mariana; Stoykova, Stefka; Sultanov, Georgi; Dimitrov, Anton; Glushkov, Ivan; Litov, Leander; Pavlov, Borislav; Petkov, Peicho; Fang, Wenxing; Gao, Xuyang; Ahmad, Muhammad; Bian, Jian-Guo; Chen, Guo-Ming; Chen, He-Sheng; Chen, Mingshui; Chen, Ye; Jiang, Chun-Hua; Leggat, Duncan; Liao, Hongbo; Liu, Zhenan; Romeo, Francesco; Shaheen, Sarmad Masood; Spiezia, Aniello; Tao, Junquan; Wang, Chunjie; Wang, Zheng; Yazgan, Efe; Zhang, Huaqiao; Zhao, Jingzhou; Ban, Yong; Chen, Geng; Li, Qiang; Liu, Shuai; Mao, Yajun; Qian, Si-Jin; Wang, Dayong; Xu, Zijun; Avila, Carlos; Cabrera, Andrés; Chaparro Sierra, Luisa Fernanda; Florez, Carlos; González Hernández, Carlos Felipe; Ruiz Alvarez, José David; Courbon, Benoit; Godinovic, Nikola; Lelas, Damir; Puljak, Ivica; Ribeiro Cipriano, Pedro M; Sculac, Toni; Antunovic, Zeljko; Kovac, Marko; Brigljevic, Vuko; Ferencek, Dinko; Kadija, Kreso; Mesic, Benjamin; Starodumov, Andrei; Susa, Tatjana; Ather, Mohsan Waseem; Attikis, Alexandros; Mavromanolakis, Georgios; Mousa, Jehad; Nicolaou, Charalambos; Ptochos, Fotios; Razis, Panos A; Rykaczewski, Hans; Finger, Miroslav; Finger Jr, Michael; Carrera Jarrin, Edgar; El-khateeb, Esraa; Elgammal, Sherif; Ellithi Kamel, Ali; Dewanjee, Ram Krishna; Kadastik, Mario; Perrini, Lucia; Raidal, Martti; Tiko, Andres; Veelken, Christian; Eerola, Paula; Pekkanen, Juska; Voutilainen, Mikko; Härkönen, Jaakko; Jarvinen, Terhi; Karimäki, Veikko; Kinnunen, Ritva; Lampén, Tapio; Lassila-Perini, Kati; Lehti, Sami; Lindén, Tomas; Luukka, Panja-Riina; Tuominen, Eija; Tuominiemi, Jorma; Tuovinen, Esa; Talvitie, Joonas; Tuuva, Tuure; Besancon, Marc; Couderc, Fabrice; Dejardin, Marc; Denegri, Daniel; Faure, Jean-Louis; Ferri, Federico; Ganjour, Serguei; Ghosh, Saranya; Givernaud, Alain; Gras, Philippe; Hamel de Monchenault, Gautier; Jarry, Patrick; Kucher, Inna; Locci, Elizabeth; Machet, Martina; Malcles, Julie; Negro, Giulia; Rander, John; Rosowsky, André; Sahin, Mehmet Özgür; Titov, Maksym; Abdulsalam, Abdulla; Antropov, Iurii; Baffioni, Stephanie; Beaudette, Florian; Busson, Philippe; Cadamuro, Luca; Charlot, Claude; Granier de Cassagnac, Raphael; Jo, Mihee; Lisniak, Stanislav; Lobanov, Artur; Martin Blanco, Javier; Nguyen, Matthew; Ochando, Christophe; Ortona, Giacomo; Paganini, Pascal; Pigard, Philipp; Regnard, Simon; Salerno, Roberto; Sauvan, Jean-Baptiste; Sirois, Yves; Stahl Leiton, Andre Govinda; Strebler, Thomas; Yilmaz, Yetkin; Zabi, Alexandre; Zghiche, Amina; Agram, Jean-Laurent; Andrea, Jeremy; Bloch, Daniel; Brom, Jean-Marie; Buttignol, Michael; Chabert, Eric Christian; Chanon, Nicolas; Collard, Caroline; Conte, Eric; Coubez, Xavier; Fontaine, Jean-Charles; Gelé, Denis; Goerlach, Ulrich; Jansová, Markéta; Le Bihan, Anne-Catherine; Tonon, Nicolas; Van Hove, Pierre; Gadrat, Sébastien; Beauceron, Stephanie; Bernet, Colin; Boudoul, Gaelle; Chierici, Roberto; Contardo, Didier; Depasse, Pierre; El Mamouni, Houmani; Fay, Jean; Finco, Linda; Gascon, Susan; Gouzevitch, Maxime; Grenier, Gérald; Ille, Bernard; Lagarde, Francois; Laktineh, Imad Baptiste; Lethuillier, Morgan; Mirabito, Laurent; Pequegnot, Anne-Laure; Perries, Stephane; Popov, Andrey; Sordini, Viola; Vander Donckt, Muriel; Viret, Sébastien; Toriashvili, Tengizi; Lomidze, David; Autermann, Christian; Beranek, Sarah; Feld, Lutz; Kiesel, Maximilian Knut; Klein, Katja; Lipinski, Martin; Preuten, Marius; Schomakers, Christian; Schulz, Johannes; Verlage, Tobias; Albert, Andreas; Dietz-Laursonn, Erik; Duchardt, Deborah; Endres, Matthias; Erdmann, Martin; Erdweg, Sören; Esch, Thomas; Fischer, Robert; Güth, Andreas; Hamer, Matthias; Hebbeker, Thomas; Heidemann, Carsten; Hoepfner, Kerstin; Knutzen, Simon; Merschmeyer, Markus; Meyer, Arnd; Millet, Philipp; Mukherjee, Swagata; Olschewski, Mark; Padeken, Klaas; Pook, Tobias; Radziej, Markus; Reithler, Hans; Rieger, Marcel; Scheuch, Florian; Teyssier, Daniel; Thüer, Sebastian; Flügge, Günter; Kargoll, Bastian; Kress, Thomas; Künsken, Andreas; Lingemann, Joschka; Müller, Thomas; Nehrkorn, Alexander; Nowack, Andreas; Pistone, Claudia; Pooth, Oliver; Stahl, Achim; Aldaya Martin, Maria; Arndt, Till; Asawatangtrakuldee, Chayanit; Beernaert, Kelly; Behnke, Olaf; Behrens, Ulf; Bermúdez Martínez, Armando; Bin Anuar, Afiq Aizuddin; Borras, Kerstin; Botta, Valeria; Campbell, Alan; Connor, Patrick; Contreras-Campana, Christian; Costanza, Francesco; Diez Pardos, Carmen; Eckerlin, Guenter; Eckstein, Doris; Eichhorn, Thomas; Eren, Engin; Gallo, Elisabetta; Garay Garcia, Jasone; Geiser, Achim; Gizhko, Andrii; Grados Luyando, Juan Manuel; Grohsjean, Alexander; Gunnellini, Paolo; Harb, Ali; Hauk, Johannes; Hempel, Maria; Jung, Hannes; Kalogeropoulos, Alexis; Kasemann, Matthias; Keaveney, James; Kleinwort, Claus; Korol, Ievgen; Krücker, Dirk; Lange, Wolfgang; Lelek, Aleksandra; Lenz, Teresa; Leonard, Jessica; Lipka, Katerina; Lohmann, Wolfgang; Mankel, Rainer; Melzer-Pellmann, Isabell-Alissandra; Meyer, Andreas Bernhard; Mittag, Gregor; Mnich, Joachim; Mussgiller, Andreas; Ntomari, Eleni; Pitzl, Daniel; Raspereza, Alexei; Roland, Benoit; Savitskyi, Mykola; Saxena, Pooja; Shevchenko, Rostyslav; Spannagel, Simon; Stefaniuk, Nazar; Van Onsem, Gerrit Patrick; Walsh, Roberval; Wen, Yiwen; Wichmann, Katarzyna; Wissing, Christoph; Zenaiev, Oleksandr; Bein, Samuel; Blobel, Volker; Centis Vignali, Matteo; Dreyer, Torben; Garutti, Erika; Gonzalez, Daniel; Haller, Johannes; Hinzmann, Andreas; Hoffmann, Malte; Karavdina, Anastasia; Klanner, Robert; Kogler, Roman; Kovalchuk, Nataliia; Kurz, Simon; Lapsien, Tobias; Marchesini, Ivan; Marconi, Daniele; Meyer, Mareike; Niedziela, Marek; Nowatschin, Dominik; Pantaleo, Felice; Peiffer, Thomas; Perieanu, Adrian; Scharf, Christian; Schleper, Peter; Schmidt, Alexander; Schumann, Svenja; Schwandt, Joern; Sonneveld, Jory; Stadie, Hartmut; Steinbrück, Georg; Stober, Fred-Markus Helmut; Stöver, Marc; Tholen, Heiner; Troendle, Daniel; Usai, Emanuele; Vanelderen, Lukas; Vanhoefer, Annika; Vormwald, Benedikt; Akbiyik, Melike; Barth, Christian; Baur, Sebastian; Butz, Erik; Caspart, René; Chwalek, Thorsten; Colombo, Fabio; De Boer, Wim; Dierlamm, Alexander; Freund, Benedikt; Friese, Raphael; Giffels, Manuel; Gilbert, Andrew; Haitz, Dominik; Hartmann, Frank; Heindl, Stefan Michael; Husemann, Ulrich; Kassel, Florian; Kudella, Simon; Mildner, Hannes; Mozer, Matthias Ulrich; Müller, Thomas; Plagge, Michael; Quast, Gunter; Rabbertz, Klaus; Schröder, Matthias; Shvetsov, Ivan; Sieber, Georg; Simonis, Hans-Jürgen; Ulrich, Ralf; Wayand, Stefan; Weber, Marc; Weiler, Thomas; Williamson, Shawn; Wöhrmann, Clemens; Wolf, Roger; Anagnostou, Georgios; Daskalakis, Georgios; Geralis, Theodoros; Giakoumopoulou, Viktoria Athina; Kyriakis, Aristotelis; Loukas, Demetrios; Topsis-Giotis, Iasonas; Karathanasis, George; Kesisoglou, Stilianos; Panagiotou, Apostolos; Saoulidou, Niki; Evangelou, Ioannis; Foudas, Costas; Kokkas, Panagiotis; Mallios, Stavros; Manthos, Nikolaos; Papadopoulos, Ioannis; Paradas, Evangelos; Strologas, John; Triantis, Frixos A; Csanad, Mate; Filipovic, Nicolas; Pasztor, Gabriella; Bencze, Gyorgy; Hajdu, Csaba; Horvath, Dezso; Hunyadi, Ádám; Sikler, Ferenc; Veszpremi, Viktor; Vesztergombi, Gyorgy; Zsigmond, Anna Julia; Beni, Noemi; Czellar, Sandor; Karancsi, János; Makovec, Alajos; Molnar, Jozsef; Szillasi, Zoltan; Bartók, Márton; Raics, Peter; Trocsanyi, Zoltan Laszlo; Ujvari, Balazs; Choudhury, Somnath; Komaragiri, Jyothsna Rani; Bahinipati, Seema; Bhowmik, Sandeep; Mal, Prolay; Mandal, Koushik; Nayak, Aruna; Sahoo, Deepak Kumar; Sahoo, Niladribihari; Swain, Sanjay Kumar; Bansal, Sunil; Beri, Suman Bala; Bhatnagar, Vipin; Chawla, Ridhi; Dhingra, Nitish; Kalsi, Amandeep Kaur; Kaur, Anterpreet; Kaur, Manjit; Kumar, Ramandeep; Kumari, Priyanka; Mehta, Ankita; Singh, Jasbir; Walia, Genius; Kumar, Ashok; Shah, Aashaq; Bhardwaj, Ashutosh; Chauhan, Sushil; Choudhary, Brajesh C; Garg, Rocky Bala; Keshri, Sumit; Kumar, Ajay; Malhotra, Shivali; Naimuddin, Md; Ranjan, Kirti; Sharma, Ramkrishna; Sharma, Varun; Bhardwaj, Rishika; Bhattacharya, Rajarshi; Bhattacharya, Satyaki; Bhawandeep, Bhawandeep; Dey, Sourav; Dutt, Suneel; Dutta, Suchandra; Ghosh, Shamik; Majumdar, Nayana; Modak, Atanu; Mondal, Kuntal; Mukhopadhyay, Supratik; Nandan, Saswati; Purohit, Arnab; Roy, Ashim; Roy, Debarati; Roy Chowdhury, Suvankar; Sarkar, Subir; Sharan, Manoj; Thakur, Shalini; Behera, Prafulla Kumar; Chudasama, Ruchi; Dutta, Dipanwita; Jha, Vishwajeet; Kumar, Vineet; Mohanty, Ajit Kumar; Netrakanti, Pawan Kumar; Pant, Lalit Mohan; Shukla, Prashant; Topkar, Anita; Aziz, Tariq; Dugad, Shashikant; Mahakud, Bibhuprasad; Mitra, Soureek; Mohanty, Gagan Bihari; Sur, Nairit; Sutar, Bajrang; Banerjee, Sudeshna; Bhattacharya, Soham; Chatterjee, Suman; Das, Pallabi; Guchait, Monoranjan; Jain, Sandhya; Kumar, Sanjeev; Maity, Manas; Majumder, Gobinda; Mazumdar, Kajari; Sarkar, Tanmay; Wickramage, Nadeesha; Chauhan, Shubhanshu; Dube, Sourabh; Hegde, Vinay; Kapoor, Anshul; Kothekar, Kunal; Pandey, Shubham; Rane, Aditee; Sharma, Seema; Chenarani, Shirin; Eskandari Tadavani, Esmaeel; Etesami, Seyed Mohsen; Khakzad, Mohsen; Mohammadi Najafabadi, Mojtaba; Naseri, Mohsen; Paktinat Mehdiabadi, Saeid; Rezaei Hosseinabadi, Ferdos; Safarzadeh, Batool; Zeinali, Maryam; Felcini, Marta; Grunewald, Martin; Abbrescia, Marcello; Calabria, Cesare; Caputo, Claudio; Colaleo, Anna; Creanza, Donato; Cristella, Leonardo; De Filippis, Nicola; De Palma, Mauro; Errico, Filippo; Fiore, Luigi; Iaselli, Giuseppe; Lezki, Samet; Maggi, Giorgio; Maggi, Marcello; Miniello, Giorgia; My, Salvatore; Nuzzo, Salvatore; Pompili, Alexis; Pugliese, Gabriella; Radogna, Raffaella; Ranieri, Antonio; Selvaggi, Giovanna; Sharma, Archana; Silvestris, Lucia; Venditti, Rosamaria; Verwilligen, Piet; Abbiendi, Giovanni; Battilana, Carlo; Bonacorsi, Daniele; Braibant-Giacomelli, Sylvie; Campanini, Renato; Capiluppi, Paolo; Castro, Andrea; Cavallo, Francesca Romana; Chhibra, Simranjit Singh; Codispoti, Giuseppe; Cuffiani, Marco; Dallavalle, Gaetano-Marco; Fabbri, Fabrizio; Fanfani, Alessandra; Fasanella, Daniele; Giacomelli, Paolo; Grandi, Claudio; Guiducci, Luigi; Marcellini, Stefano; Masetti, Gianni; Montanari, Alessandro; Navarria, Francesco; Perrotta, Andrea; Rossi, Antonio; Rovelli, Tiziano; Siroli, Gian Piero; Tosi, Nicolò; Albergo, Sebastiano; Costa, Salvatore; Di Mattia, Alessandro; Giordano, Ferdinando; Potenza, Renato; Tricomi, Alessia; Tuve, Cristina; Barbagli, Giuseppe; Chatterjee, Kalyanmoy; Ciulli, Vitaliano; Civinini, Carlo; D'Alessandro, Raffaello; Focardi, Ettore; Lenzi, Piergiulio; Meschini, Marco; Paoletti, Simone; Russo, Lorenzo; Sguazzoni, Giacomo; Strom, Derek; Viliani, Lorenzo; Benussi, Luigi; Bianco, Stefano; Fabbri, Franco; Piccolo, Davide; Primavera, Federica; Biggio, Carla; Calvelli, Valerio; Ferro, Fabrizio; Robutti, Enrico; Tosi, Silvano; Brianza, Luca; Brivio, Francesco; Ciriolo, Vincenzo; Dinardo, Mauro Emanuele; Fiorendi, Sara; Gennai, Simone; Ghezzi, Alessio; Govoni, Pietro; Malberti, Martina; Malvezzi, Sandra; Manzoni, Riccardo Andrea; Menasce, Dario; Moroni, Luigi; Paganoni, Marco; Pauwels, Kristof; Pedrini, Daniele; Pigazzini, Simone; Ragazzi, Stefano; Tabarelli de Fatis, Tommaso; Buontempo, Salvatore; Cavallo, Nicola; Di Guida, Salvatore; Fabozzi, Francesco; Fienga, Francesco; Iorio, Alberto Orso Maria; Khan, Wajid Ali; Lista, Luca; Meola, Sabino; Paolucci, Pierluigi; Sciacca, Crisostomo; Thyssen, Filip; Azzi, Patrizia; Bacchetta, Nicola; Benato, Lisa; Bisello, Dario; Boletti, Alessio; Carlin, Roberto; Carvalho Antunes De Oliveira, Alexandra; Checchia, Paolo; De Castro Manzano, Pablo; Dorigo, Tommaso; Gasparini, Fabrizio; Gasparini, Ugo; Gozzelino, Andrea; Lacaprara, Stefano; Lujan, Paul; Margoni, Martino; Meneguzzo, Anna Teresa; Pozzobon, Nicola; Ronchese, Paolo; Rossin, Roberto; Simonetto, Franco; Torassa, Ezio; Zanetti, Marco; Zotto, Pierluigi; Zumerle, Gianni; Braghieri, Alessandro; Fallavollita, Francesco; Magnani, Alice; Montagna, Paolo; Ratti, Sergio P; Re, Valerio; Ressegotti, Martina; Riccardi, Cristina; Salvini, Paola; Vai, Ilaria; Vitulo, Paolo; Alunni Solestizi, Luisa; Biasini, Maurizio; Bilei, Gian Mario; Cecchi, Claudia; Ciangottini, Diego; Fanò, Livio; Lariccia, Paolo; Leonardi, Roberto; Manoni, Elisa; Mantovani, Giancarlo; Mariani, Valentina; Menichelli, Mauro; Rossi, Alessandro; Santocchia, Attilio; Spiga, Daniele; Androsov, Konstantin; Azzurri, Paolo; Bagliesi, Giuseppe; Bernardini, Jacopo; Boccali, Tommaso; Borrello, Laura; Castaldi, Rino; Ciocci, Maria Agnese; Dell'Orso, Roberto; Fedi, Giacomo; Giannini, Leonardo; Giassi, Alessandro; Grippo, Maria Teresa; Ligabue, Franco; Lomtadze, Teimuraz; Manca, Elisabetta; Mandorli, Giulio; Martini, Luca; Messineo, Alberto; Palla, Fabrizio; Rizzi, Andrea; Savoy-Navarro, Aurore; Spagnolo, Paolo; Tenchini, Roberto; Tonelli, Guido; Venturi, Andrea; Verdini, Piero Giorgio; Barone, Luciano; Cavallari, Francesca; Cipriani, Marco; Daci, Nadir; Del Re, Daniele; Diemoz, Marcella; Gelli, Simone; Longo, Egidio; Margaroli, Fabrizio; Marzocchi, Badder; Meridiani, Paolo; Organtini, Giovanni; Paramatti, Riccardo; Preiato, Federico; Rahatlou, Shahram; Rovelli, Chiara; Santanastasio, Francesco; Amapane, Nicola; Arcidiacono, Roberta; Argiro, Stefano; Arneodo, Michele; Bartosik, Nazar; Bellan, Riccardo; Biino, Cristina; Cartiglia, Nicolo; Cenna, Francesca; Costa, Marco; Covarelli, Roberto; Degano, Alessandro; Demaria, Natale; Kiani, Bilal; Mariotti, Chiara; Maselli, Silvia; Migliore, Ernesto; Monaco, Vincenzo; Monteil, Ennio; Monteno, Marco; Obertino, Maria Margherita; Pacher, Luca; Pastrone, Nadia; Pelliccioni, Mario; Pinna Angioni, Gian Luca; Ravera, Fabio; Romero, Alessandra; Ruspa, Marta; Sacchi, Roberto; Shchelina, Ksenia; Sola, Valentina; Solano, Ada; Staiano, Amedeo; Traczyk, Piotr; Belforte, Stefano; Casarsa, Massimo; Cossutti, Fabio; Della Ricca, Giuseppe; Zanetti, Anna; Kim, Dong Hee; Kim, Gui Nyun; Kim, Min Suk; Lee, Jeongeun; Lee, Sangeun; Lee, Seh Wook; Moon, Chang-Seong; Oh, Young Do; Sekmen, Sezen; Son, Dong-Chul; Yang, Yu Chul; Lee, Ari; Kim, Hyunchul; Moon, Dong Ho; Oh, Geonhee; Brochero Cifuentes, Javier Andres; Goh, Junghwan; Kim, Tae Jeong; Cho, Sungwoong; Choi, Suyong; Go, Yeonju; Gyun, Dooyeon; Ha, Seungkyu; Hong, Byung-Sik; Jo, Youngkwon; Kim, Yongsun; Lee, Kisoo; Lee, Kyong Sei; Lee, Songkyo; Lim, Jaehoon; Park, Sung Keun; Roh, Youn; Almond, John; Kim, Junho; Kim, Jae Sung; Lee, Haneol; Lee, Kyeongpil; Nam, Kyungwook; Oh, Sung Bin; Radburn-Smith, Benjamin Charles; Seo, Seon-hee; Yang, Unki; Yoo, Hwi Dong; Yu, Geum Bong; Choi, Minkyoo; Kim, Hyunyong; Kim, Ji Hyun; Lee, Jason Sang Hun; Park, Inkyu; Ryu, Geonmo; Choi, Young-Il; Hwang, Chanwook; Lee, Jongseok; Yu, Intae; Dudenas, Vytautas; Juodagalvis, Andrius; Vaitkus, Juozas; Ahmed, Ijaz; Ibrahim, Zainol Abidin; Md Ali, Mohd Adli Bin; Mohamad Idris, Faridah; Wan Abdullah, Wan Ahmad Tajuddin; Yusli, Mohd Nizam; Zolkapli, Zukhaimira; Reyes-Almanza, Rogelio; Ramirez-Sanchez, Gabriel; Duran-Osuna, Cecilia; Castilla-Valdez, Heriberto; De La Cruz-Burelo, Eduard; Heredia-De La Cruz, Ivan; Rabadán-Trejo, Raúl Iraq; Lopez-Fernandez, Ricardo; Mejia Guisao, Jhovanny; Sánchez Hernández, Alberto; Carrillo Moreno, Salvador; Oropeza Barrera, Cristina; Vazquez Valencia, Fabiola; Pedraza, Isabel; Salazar Ibarguen, Humberto Antonio; Uribe Estrada, Cecilia; Morelos Pineda, Antonio; Krofcheck, David; Butler, Philip H; Ahmad, Ashfaq; Ahmad, Muhammad; Hassan, Qamar; Hoorani, Hafeez R; Saddique, Asif; Shah, Mehar Ali; Shoaib, Muhammad; Waqas, Muhammad; Bialkowska, Helena; Bluj, Michal; Boimska, Bozena; Frueboes, Tomasz; Górski, Maciej; Kazana, Malgorzata; Nawrocki, Krzysztof; Romanowska-Rybinska, Katarzyna; Szleper, Michal; Zalewski, Piotr; Bunkowski, Karol; Byszuk, Adrian; Doroba, Krzysztof; Kalinowski, Artur; Konecki, Marcin; Krolikowski, Jan; Misiura, Maciej; Olszewski, Michal; Pyskir, Andrzej; Walczak, Marek; Bargassa, Pedrame; Beirão Da Cruz E Silva, Cristóvão; Calpas, Betty; Di Francesco, Agostino; Faccioli, Pietro; Gallinaro, Michele; Hollar, Jonathan; Leonardo, Nuno; Lloret Iglesias, Lara; Nemallapudi, Mythra Varun; Seixas, Joao; Toldaiev, Oleksii; Vadruccio, Daniele; Varela, Joao; Afanasiev, Serguei; Bunin, Pavel; Gavrilenko, Mikhail; Golutvin, Igor; Gorbunov, Ilya; Kamenev, Alexey; Karjavin, Vladimir; Lanev, Alexander; Malakhov, Alexander; Matveev, Viktor; Palichik, Vladimir; Perelygin, Victor; Shmatov, Sergey; Shulha, Siarhei; Skatchkov, Nikolai; Smirnov, Vitaly; Voytishin, Nikolay; Zarubin, Anatoli; Ivanov, Yury; Kim, Victor; Kuznetsova, Ekaterina; Levchenko, Petr; Murzin, Victor; Oreshkin, Vadim; Smirnov, Igor; Sulimov, Valentin; Uvarov, Lev; Vavilov, Sergey; Vorobyev, Alexey; Andreev, Yuri; Dermenev, Alexander; Gninenko, Sergei; Golubev, Nikolai; Karneyeu, Anton; Kirsanov, Mikhail; Krasnikov, Nikolai; Pashenkov, Anatoli; Tlisov, Danila; Toropin, Alexander; Epshteyn, Vladimir; Gavrilov, Vladimir; Lychkovskaya, Natalia; Popov, Vladimir; Pozdnyakov, Ivan; Safronov, Grigory; Spiridonov, Alexander; Stepennov, Anton; Toms, Maria; Vlasov, Evgueni; Zhokin, Alexander; Aushev, Tagir; Bylinkin, Alexander; Chistov, Ruslan; Danilov, Mikhail; Parygin, Pavel; Philippov, Dmitry; Polikarpov, Sergey; Tarkovskii, Evgenii; Andreev, Vladimir; Azarkin, Maksim; Dremin, Igor; Kirakosyan, Martin; Terkulov, Adel; Baskakov, Alexey; Belyaev, Andrey; Boos, Edouard; Dubinin, Mikhail; Dudko, Lev; Ershov, Alexander; Gribushin, Andrey; Klyukhin, Vyacheslav; Kodolova, Olga; Lokhtin, Igor; Miagkov, Igor; Obraztsov, Stepan; Petrushanko, Sergey; Savrin, Viktor; Snigirev, Alexander; Blinov, Vladimir; Skovpen, Yuri; Shtol, Dmitry; Azhgirey, Igor; Bayshev, Igor; Bitioukov, Sergei; Elumakhov, Dmitry; Kachanov, Vassili; Kalinin, Alexey; Konstantinov, Dmitri; Krychkine, Victor; Petrov, Vladimir; Ryutin, Roman; Sobol, Andrei; Troshin, Sergey; Tyurin, Nikolay; Uzunian, Andrey; Volkov, Alexey; Adzic, Petar; Cirkovic, Predrag; Devetak, Damir; Dordevic, Milos; Milosevic, Jovan; Rekovic, Vladimir; Alcaraz Maestre, Juan; Barrio Luna, Mar; Cerrada, Marcos; Colino, Nicanor; De La Cruz, Begona; Delgado Peris, Antonio; Escalante Del Valle, Alberto; Fernandez Bedoya, Cristina; Fernández Ramos, Juan Pablo; Flix, Jose; Fouz, Maria Cruz; Garcia-Abia, Pablo; Gonzalez Lopez, Oscar; Goy Lopez, Silvia; Hernandez, Jose M; Josa, Maria Isabel; Pérez-Calero Yzquierdo, Antonio María; Puerta Pelayo, Jesus; Quintario Olmeda, Adrián; Redondo, Ignacio; Romero, Luciano; Senghi Soares, Mara; Álvarez Fernández, Adrian; de Trocóniz, Jorge F; Missiroli, Marino; Moran, Dermot; Cuevas, Javier; Erice, Carlos; Fernandez Menendez, Javier; Gonzalez Caballero, Isidro; González Fernández, Juan Rodrigo; Palencia Cortezon, Enrique; Sanchez Cruz, Sergio; Suárez Andrés, Ignacio; Vischia, Pietro; Vizan Garcia, Jesus Manuel; Cabrillo, Iban Jose; Calderon, Alicia; Chazin Quero, Barbara; Curras, Esteban; Duarte Campderros, Jordi; Fernandez, Marcos; Garcia-Ferrero, Juan; Gomez, Gervasio; Lopez Virto, Amparo; Marco, Jesus; Martinez Rivero, Celso; Martinez Ruiz del Arbol, Pablo; Matorras, Francisco; Piedra Gomez, Jonatan; Rodrigo, Teresa; Ruiz-Jimeno, Alberto; Scodellaro, Luca; Trevisani, Nicolò; Vila, Ivan; Vilar Cortabitarte, Rocio; Abbaneo, Duccio; Auffray, Etiennette; Baillon, Paul; Ball, Austin; Barney, David; Bianco, Michele; Bloch, Philippe; Bocci, Andrea; Botta, Cristina; Camporesi, Tiziano; Castello, Roberto; Cepeda, Maria; Cerminara, Gianluca; Chapon, Emilien; Chen, Yi; D'Enterria, David; Dabrowski, Anne; Daponte, Vincenzo; David Tinoco Mendes, Andre; De Gruttola, Michele; De Roeck, Albert; Di Marco, Emanuele; Dobson, Marc; Dorney, Brian; Du Pree, Tristan; Dünser, Marc; Dupont, Niels; Elliott-Peisert, Anna; Everaerts, Pieter; Franzoni, Giovanni; Fulcher, Jonathan; Funk, Wolfgang; Gigi, Dominique; Gill, Karl; Glege, Frank; Gulhan, Doga; Gundacker, Stefan; Guthoff, Moritz; Harris, Philip; Hegeman, Jeroen; Innocente, Vincenzo; Janot, Patrick; Karacheban, Olena; Kieseler, Jan; Kirschenmann, Henning; Knünz, Valentin; Kornmayer, Andreas; Kortelainen, Matti J; Krammer, Manfred; Lange, Clemens; Lecoq, Paul; Lourenco, Carlos; Lucchini, Marco Toliman; Malgeri, Luca; Mannelli, Marcello; Martelli, Arabella; Meijers, Frans; Merlin, Jeremie Alexandre; Mersi, Stefano; Meschi, Emilio; Milenovic, Predrag; Moortgat, Filip; Mulders, Martijn; Neugebauer, Hannes; Orfanelli, Styliani; Orsini, Luciano; Pape, Luc; Perez, Emmanuel; Peruzzi, Marco; Petrilli, Achille; Petrucciani, Giovanni; Pfeiffer, Andreas; Pierini, Maurizio; Racz, Attila; Reis, Thomas; Rolandi, Gigi; Rovere, Marco; Sakulin, Hannes; Schäfer, Christoph; Schwick, Christoph; Seidel, Markus; Selvaggi, Michele; Sharma, Archana; Silva, Pedro; Sphicas, Paraskevas; Stakia, Anna; Steggemann, Jan; Stoye, Markus; Tosi, Mia; Treille, Daniel; Triossi, Andrea; Tsirou, Andromachi; Veckalns, Viesturs; Veres, Gabor Istvan; Verweij, Marta; Wardle, Nicholas; Zeuner, Wolfram Dietrich; Bertl, Willi; Caminada, Lea; Deiters, Konrad; Erdmann, Wolfram; Horisberger, Roland; Ingram, Quentin; Kaestli, Hans-Christian; Kotlinski, Danek; Langenegger, Urs; Rohe, Tilman; Wiederkehr, Stephan Albert; Bachmair, Felix; Bäni, Lukas; Berger, Pirmin; Bianchini, Lorenzo; Casal, Bruno; Dissertori, Günther; Dittmar, Michael; Donegà, Mauro; Grab, Christoph; Heidegger, Constantin; Hits, Dmitry; Hoss, Jan; Kasieczka, Gregor; Klijnsma, Thomas; Lustermann, Werner; Mangano, Boris; Marionneau, Matthieu; Meinhard, Maren Tabea; Meister, Daniel; Micheli, Francesco; Musella, Pasquale; Nessi-Tedaldi, Francesca; Pandolfi, Francesco; Pata, Joosep; Pauss, Felicitas; Perrin, Gaël; Perrozzi, Luca; Quittnat, Milena; Reichmann, Michael; Schönenberger, Myriam; Shchutska, Lesya; Tavolaro, Vittorio Raoul; Theofilatos, Konstantinos; Vesterbacka Olsson, Minna Leonora; Wallny, Rainer; Zhu, De Hua; Aarrestad, Thea Klaeboe; Amsler, Claude; Canelli, Maria Florencia; De Cosa, Annapaola; Del Burgo, Riccardo; Donato, Silvio; Galloni, Camilla; Hreus, Tomas; Kilminster, Benjamin; Ngadiuba, Jennifer; Pinna, Deborah; Rauco, Giorgia; Robmann, Peter; Salerno, Daniel; Seitz, Claudia; Takahashi, Yuta; Zucchetta, Alberto; Candelise, Vieri; Doan, Thi Hien; Jain, Shilpi; Khurana, Raman; Kuo, Chia-Ming; Lin, Willis; Pozdnyakov, Andrey; Yu, Shin-Shan; Kumar, Arun; Chang, Paoti; Chao, Yuan; Chen, Kai-Feng; Chen, Po-Hsun; Fiori, Francesco; Hou, George Wei-Shu; Hsiung, Yee; Liu, Yueh-Feng; Lu, Rong-Shyang; Paganis, Efstathios; Psallidas, Andreas; Steen, Arnaud; Tsai, Jui-fa; Asavapibhop, Burin; Kovitanggoon, Kittikul; Singh, Gurpreet; Srimanobhas, Norraphat; Adiguzel, Aytul; Boran, Fatma; Cerci, Salim; Damarseckin, Serdal; Demiroglu, Zuhal Seyma; Dozen, Candan; Dumanoglu, Isa; Girgis, Semiray; Gokbulut, Gul; Guler, Yalcin; Hos, Ilknur; Kangal, Evrim Ersin; Kara, Ozgun; Kayis Topaksu, Aysel; Kiminsu, Ugur; Oglakci, Mehmet; Onengut, Gulsen; Ozdemir, Kadri; Sunar Cerci, Deniz; Tali, Bayram; Turkcapar, Semra; Zorbakir, Ibrahim Soner; Zorbilmez, Caglar; Bilin, Bugra; Karapinar, Guler; Ocalan, Kadir; Yalvac, Metin; Zeyrek, Mehmet; Gülmez, Erhan; Kaya, Mithat; Kaya, Ozlem; Tekten, Sevgi; Yetkin, Elif Asli; Nazlim Agaras, Merve; Atay, Serhat; Cakir, Altan; Cankocak, Kerem; Grynyov, Boris; Levchuk, Leonid; Sorokin, Pavel; Aggleton, Robin; Ball, Fionn; Beck, Lana; Brooke, James John; Burns, Douglas; Clement, Emyr; Cussans, David; Davignon, Olivier; Flacher, Henning; Goldstein, Joel; Grimes, Mark; Heath, Greg P; Heath, Helen F; Jacob, Jeson; Kreczko, Lukasz; Lucas, Chris; Newbold, Dave M; Paramesvaran, Sudarshan; Poll, Anthony; Sakuma, Tai; Seif El Nasr-storey, Sarah; Smith, Dominic; Smith, Vincent J; Bell, Ken W; Belyaev, Alexander; Brew, Christopher; Brown, Robert M; Calligaris, Luigi; Cieri, Davide; Cockerill, David JA; Coughlan, John A; Harder, Kristian; Harper, Sam; Olaiya, Emmanuel; Petyt, David; Shepherd-Themistocleous, Claire; Thea, Alessandro; Tomalin, Ian R; Williams, Thomas; Auzinger, Georg; Bainbridge, Robert; Breeze, Shane; Buchmuller, Oliver; Bundock, Aaron; Casasso, Stefano; Citron, Matthew; Colling, David; Corpe, Louie; Dauncey, Paul; Davies, Gavin; De Wit, Adinda; Della Negra, Michel; Di Maria, Riccardo; Elwood, Adam; Haddad, Yacine; Hall, Geoffrey; Iles, Gregory; James, Thomas; Lane, Rebecca; Laner, Christian; Lyons, Louis; Magnan, Anne-Marie; Malik, Sarah; Mastrolorenzo, Luca; Matsushita, Takashi; Nash, Jordan; Nikitenko, Alexander; Palladino, Vito; Pesaresi, Mark; Raymond, David Mark; Richards, Alexander; Rose, Andrew; Scott, Edward; Seez, Christopher; Shtipliyski, Antoni; Summers, Sioni; Tapper, Alexander; Uchida, Kirika; Vazquez Acosta, Monica; Virdee, Tejinder; Winterbottom, Daniel; Wright, Jack; Zenz, Seth Conrad; Cole, Joanne; Hobson, Peter R; Khan, Akram; Kyberd, Paul; Reid, Ivan; Symonds, Philip; Teodorescu, Liliana; Turner, Mark; Borzou, Ahmad; Call, Kenneth; Dittmann, Jay; Hatakeyama, Kenichi; Liu, Hongxuan; Pastika, Nathaniel; Smith, Caleb; Bartek, Rachel; Dominguez, Aaron; Buccilli, Andrew; Cooper, Seth; Henderson, Conor; Rumerio, Paolo; West, Christopher; Arcaro, Daniel; Avetisyan, Aram; Bose, Tulika; Gastler, Daniel; Rankin, Dylan; Richardson, Clint; Rohlf, James; Sulak, Lawrence; Zou, David; Benelli, Gabriele; Cutts, David; Garabedian, Alex; Hakala, John; Heintz, Ulrich; Hogan, Julie Managan; Kwok, Ka Hei Martin; Laird, Edward; Landsberg, Greg; Mao, Zaixing; Narain, Meenakshi; Pazzini, Jacopo; Piperov, Stefan; Sagir, Sinan; Syarif, Rizki; Yu, David; Band, Reyer; Brainerd, Christopher; Burns, Dustin; Calderon De La Barca Sanchez, Manuel; Chertok, Maxwell; Conway, John; Conway, Rylan; Cox, Peter Timothy; Erbacher, Robin; Flores, Chad; Funk, Garrett; Gardner, Michael; Ko, Winston; Lander, Richard; Mclean, Christine; Mulhearn, Michael; Pellett, Dave; Pilot, Justin; Shalhout, Shalhout; Shi, Mengyao; Smith, John; Squires, Michael; Stolp, Dustin; Tos, Kyle; Tripathi, Mani; Wang, Zhangqier; Bachtis, Michail; Bravo, Cameron; Cousins, Robert; Dasgupta, Abhigyan; Florent, Alice; Hauser, Jay; Ignatenko, Mikhail; Mccoll, Nickolas; Saltzberg, David; Schnaible, Christian; Valuev, Vyacheslav; Bouvier, Elvire; Burt, Kira; Clare, Robert; Ellison, John Anthony; Gary, J William; Ghiasi Shirazi, Seyyed Mohammad Amin; Hanson, Gail; Heilman, Jesse; Jandir, Pawandeep; Kennedy, Elizabeth; Lacroix, Florent; Long, Owen Rosser; Olmedo Negrete, Manuel; Paneva, Mirena Ivova; Shrinivas, Amithabh; Si, Weinan; Wang, Long; Wei, Hua; Wimpenny, Stephen; Yates, Brent; Branson, James G; Cittolin, Sergio; Derdzinski, Mark; Gerosa, Raffaele; Hashemi, Bobak; Holzner, André; Klein, Daniel; Kole, Gouranga; Krutelyov, Vyacheslav; Letts, James; Macneill, Ian; Masciovecchio, Mario; Olivito, Dominick; Padhi, Sanjay; Pieri, Marco; Sani, Matteo; Sharma, Vivek; Simon, Sean; Tadel, Matevz; Vartak, Adish; Wasserbaech, Steven; Wood, John; Würthwein, Frank; Yagil, Avraham; Zevi Della Porta, Giovanni; Amin, Nick; Bhandari, Rohan; Bradmiller-Feld, John; Campagnari, Claudio; Dishaw, Adam; Dutta, Valentina; Franco Sevilla, Manuel; George, Christopher; Golf, Frank; Gouskos, Loukas; Gran, Jason; Heller, Ryan; Incandela, Joe; Mullin, Sam Daniel; Ovcharova, Ana; Qu, Huilin; Richman, Jeffrey; Stuart, David; Suarez, Indara; Yoo, Jaehyeok; Anderson, Dustin; Bendavid, Joshua; Bornheim, Adolf; Lawhorn, Jay Mathew; Newman, Harvey B; Nguyen, Thong; Pena, Cristian; Spiropulu, Maria; Vlimant, Jean-Roch; Xie, Si; Zhang, Zhicai; Zhu, Ren-Yuan; Andrews, Michael Benjamin; Ferguson, Thomas; Mudholkar, Tanmay; Paulini, Manfred; Russ, James; Sun, Menglei; Vogel, Helmut; Vorobiev, Igor; Weinberg, Marc; Cumalat, John Perry; Ford, William T; Jensen, Frank; Johnson, Andrew; Krohn, Michael; Leontsinis, Stefanos; Mulholland, Troy; Stenson, Kevin; Wagner, Stephen Robert; Alexander, James; Chaves, Jorge; Chu, Jennifer; Dittmer, Susan; Mcdermott, Kevin; Mirman, Nathan; Patterson, Juliet Ritchie; Rinkevicius, Aurelijus; Ryd, Anders; Skinnari, Louise; Soffi, Livia; Tan, Shao Min; Tao, Zhengcheng; Thom, Julia; Tucker, Jordan; Wittich, Peter; Zientek, Margaret; Abdullin, Salavat; Albrow, Michael; Apollinari, Giorgio; Apresyan, Artur; Apyan, Aram; Banerjee, Sunanda; Bauerdick, Lothar AT; Beretvas, Andrew; Berryhill, Jeffrey; Bhat, Pushpalatha C; Bolla, Gino; Burkett, Kevin; Butler, Joel Nathan; Canepa, Anadi; Cerati, Giuseppe Benedetto; Cheung, Harry; Chlebana, Frank; Cremonesi, Matteo; Duarte, Javier; Elvira, Victor Daniel; Freeman, Jim; Gecse, Zoltan; Gottschalk, Erik; Gray, Lindsey; Green, Dan; Grünendahl, Stefan; Gutsche, Oliver; Harris, Robert M; Hasegawa, Satoshi; Hirschauer, James; Hu, Zhen; Jayatilaka, Bodhitha; Jindariani, Sergo; Johnson, Marvin; Joshi, Umesh; Klima, Boaz; Kreis, Benjamin; Lammel, Stephan; Lincoln, Don; Lipton, Ron; Liu, Miaoyuan; Liu, Tiehui; Lopes De Sá, Rafael; Lykken, Joseph; Maeshima, Kaori; Magini, Nicolo; Marraffino, John Michael; Maruyama, Sho; Mason, David; McBride, Patricia; Merkel, Petra; Mrenna, Stephen; Nahn, Steve; O'Dell, Vivian; Pedro, Kevin; Prokofyev, Oleg; Rakness, Gregory; Ristori, Luciano; Schneider, Basil; Sexton-Kennedy, Elizabeth; Soha, Aron; Spalding, William J; Spiegel, Leonard; Stoynev, Stoyan; Strait, James; Strobbe, Nadja; Taylor, Lucas; Tkaczyk, Slawek; Tran, Nhan Viet; Uplegger, Lorenzo; Vaandering, Eric Wayne; Vernieri, Caterina; Verzocchi, Marco; Vidal, Richard; Wang, Michael; Weber, Hannsjoerg Artur; Whitbeck, Andrew; Acosta, Darin; Avery, Paul; Bortignon, Pierluigi; Bourilkov, Dimitri; Brinkerhoff, Andrew; Carnes, Andrew; Carver, Matthew; Curry, David; Field, Richard D; Furic, Ivan-Kresimir; Konigsberg, Jacobo; Korytov, Andrey; Kotov, Khristian; Ma, Peisen; Matchev, Konstantin; Mei, Hualin; Mitselmakher, Guenakh; Rank, Douglas; Sperka, David; Terentyev, Nikolay; Thomas, Laurent; Wang, Jian; Wang, Sean-Jiun; Yelton, John; Joshi, Yagya Raj; Linn, Stephan; Markowitz, Pete; Rodriguez, Jorge Luis; Ackert, Andrew; Adams, Todd; Askew, Andrew; Hagopian, Sharon; Hagopian, Vasken; Johnson, Kurtis F; Kolberg, Ted; Martinez, German; Perry, Thomas; Prosper, Harrison; Saha, Anirban; Santra, Arka; Yohay, Rachel; Baarmand, Marc M; Bhopatkar, Vallary; Colafranceschi, Stefano; Hohlmann, Marcus; Noonan, Daniel; Roy, Titas; Yumiceva, Francisco; Adams, Mark Raymond; Apanasevich, Leonard; Berry, Douglas; Betts, Russell Richard; Cavanaugh, Richard; Chen, Xuan; Evdokimov, Olga; Gerber, Cecilia Elena; Hangal, Dhanush Anil; Hofman, David Jonathan; Jung, Kurt; Kamin, Jason; Sandoval Gonzalez, Irving Daniel; Tonjes, Marguerite; Trauger, Hallie; Varelas, Nikos; Wang, Hui; Wu, Zhenbin; Zhang, Jingyu; Bilki, Burak; Clarida, Warren; Dilsiz, Kamuran; Durgut, Süleyman; Gandrajula, Reddy Pratap; Haytmyradov, Maksat; Khristenko, Viktor; Merlo, Jean-Pierre; Mermerkaya, Hamit; Mestvirishvili, Alexi; Moeller, Anthony; Nachtman, Jane; Ogul, Hasan; Onel, Yasar; Ozok, Ferhat; Penzo, Aldo; Snyder, Christina; Tiras, Emrah; Wetzel, James; Yi, Kai; Blumenfeld, Barry; Cocoros, Alice; Eminizer, Nicholas; Fehling, David; Feng, Lei; Gritsan, Andrei; Maksimovic, Petar; Roskes, Jeffrey; Sarica, Ulascan; Swartz, Morris; Xiao, Meng; You, Can; Al-bataineh, Ayman; Baringer, Philip; Bean, Alice; Boren, Samuel; Bowen, James; Castle, James; Khalil, Sadia; Kropivnitskaya, Anna; Majumder, Devdatta; Mcbrayer, William; Murray, Michael; Royon, Christophe; Sanders, Stephen; Schmitz, Erich; Stringer, Robert; Tapia Takaki, Daniel; Wang, Quan; Ivanov, Andrew; Kaadze, Ketino; Maravin, Yurii; Mohammadi, Abdollah; Saini, Lovedeep Kaur; Skhirtladze, Nikoloz; Toda, Sachiko; Rebassoo, Finn; Wright, Douglas; Anelli, Christopher; Baden, Drew; Baron, Owen; Belloni, Alberto; Calvert, Brian; Eno, Sarah Catherine; Ferraioli, Charles; Hadley, Nicholas John; Jabeen, Shabnam; Jeng, Geng-Yuan; Kellogg, Richard G; Kunkle, Joshua; Mignerey, Alice; Ricci-Tam, Francesca; Shin, Young Ho; Skuja, Andris; Tonwar, Suresh C; Abercrombie, Daniel; Allen, Brandon; Azzolini, Virginia; Barbieri, Richard; Baty, Austin; Bi, Ran; Brandt, Stephanie; Busza, Wit; Cali, Ivan Amos; D'Alfonso, Mariarosaria; Demiragli, Zeynep; Gomez Ceballos, Guillelmo; Goncharov, Maxim; Hsu, Dylan; Iiyama, Yutaro; Innocenti, Gian Michele; Klute, Markus; Kovalskyi, Dmytro; Lai, Yue Shi; Lee, Yen-Jie; Levin, Andrew; Luckey, Paul David; Maier, Benedikt; Marini, Andrea Carlo; Mcginn, Christopher; Mironov, Camelia; Narayanan, Siddharth; Niu, Xinmei; Paus, Christoph; Roland, Christof; Roland, Gunther; Salfeld-Nebgen, Jakob; Stephans, George; Tatar, Kaya; Velicanu, Dragos; Wang, Jing; Wang, Ta-Wei; Wyslouch, Bolek; Benvenuti, Alberto; Chatterjee, Rajdeep Mohan; Evans, Andrew; Hansen, Peter; Kalafut, Sean; Kubota, Yuichi; Lesko, Zachary; Mans, Jeremy; Nourbakhsh, Shervin; Ruckstuhl, Nicole; Rusack, Roger; Turkewitz, Jared; Acosta, John Gabriel; Oliveros, Sandra; Avdeeva, Ekaterina; Bloom, Kenneth; Claes, Daniel R; Fangmeier, Caleb; Gonzalez Suarez, Rebeca; Kamalieddin, Rami; Kravchenko, Ilya; Monroy, Jose; Siado, Joaquin Emilo; Snow, Gregory R; Stieger, Benjamin; Alyari, Maral; Dolen, James; Godshalk, Andrew; Harrington, Charles; Iashvili, Ia; Nguyen, Duong; Parker, Ashley; Rappoccio, Salvatore; Roozbahani, Bahareh; Alverson, George; Barberis, Emanuela; Hortiangtham, Apichart; Massironi, Andrea; Morse, David Michael; Nash, David; Orimoto, Toyoko; Teixeira De Lima, Rafael; Trocino, Daniele; Wood, Darien; Bhattacharya, Saptaparna; Charaf, Otman; Hahn, Kristan Allan; Mucia, Nicholas; Odell, Nathaniel; Pollack, Brian; Schmitt, Michael Henry; Sung, Kevin; Trovato, Marco; Velasco, Mayda; Dev, Nabarun; Hildreth, Michael; Hurtado Anampa, Kenyi; Jessop, Colin; Karmgard, Daniel John; Kellams, Nathan; Lannon, Kevin; Loukas, Nikitas; Marinelli, Nancy; Meng, Fanbo; Mueller, Charles; Musienko, Yuri; Planer, Michael; Reinsvold, Allison; Ruchti, Randy; Smith, Geoffrey; Taroni, Silvia; Wayne, Mitchell; Wolf, Matthias; Woodard, Anna; Alimena, Juliette; Antonelli, Louis; Bylsma, Ben; Durkin, Lloyd Stanley; Flowers, Sean; Francis, Brian; Hart, Andrew; Hill, Christopher; Ji, Weifeng; Liu, Bingxuan; Luo, Wuming; Puigh, Darren; Winer, Brian L; Wulsin, Howard Wells; Benaglia, Andrea; Cooperstein, Stephane; Driga, Olga; Elmer, Peter; Hardenbrook, Joshua; Hebda, Philip; Higginbotham, Samuel; Lange, David; Luo, Jingyu; Marlow, Daniel; Mei, Kelvin; Ojalvo, Isabel; Olsen, James; Palmer, Christopher; Piroué, Pierre; Stickland, David; Tully, Christopher; Malik, Sudhir; Norberg, Scarlet; Barker, Anthony; Barnes, Virgil E; Das, Souvik; Folgueras, Santiago; Gutay, Laszlo; Jha, Manoj; Jones, Matthew; Jung, Andreas Werner; Khatiwada, Ajeeta; Miller, David Harry; Neumeister, Norbert; Peng, Cheng-Chieh; Schulte, Jan-Frederik; Sun, Jian; Wang, Fuqiang; Xie, Wei; Cheng, Tongguang; Parashar, Neeti; Stupak, John; Adair, Antony; Akgun, Bora; Chen, Zhenyu; Ecklund, Karl Matthew; Geurts, Frank JM; Guilbaud, Maxime; Li, Wei; Michlin, Benjamin; Northup, Michael; Padley, Brian Paul; Roberts, Jay; Rorie, Jamal; Tu, Zhoudunming; Zabel, James; Bodek, Arie; de Barbaro, Pawel; Demina, Regina; Duh, Yi-ting; Ferbel, Thomas; Galanti, Mario; Garcia-Bellido, Aran; Han, Jiyeon; Hindrichs, Otto; Khukhunaishvili, Aleko; Lo, Kin Ho; Tan, Ping; Verzetti, Mauro; Ciesielski, Robert; Goulianos, Konstantin; Mesropian, Christina; Agapitos, Antonis; Chou, John Paul; Gershtein, Yuri; Gómez Espinosa, Tirso Alejandro; Halkiadakis, Eva; Heindl, Maximilian; Hughes, Elliot; Kaplan, Steven; Kunnawalkam Elayavalli, Raghav; Kyriacou, Savvas; Lath, Amitabh; Montalvo, Roy; Nash, Kevin; Osherson, Marc; Saka, Halil; Salur, Sevil; Schnetzer, Steve; Sheffield, David; Somalwar, Sunil; Stone, Robert; Thomas, Scott; Thomassen, Peter; Walker, Matthew; Delannoy, Andrés G; Foerster, Mark; Heideman, Joseph; Riley, Grant; Rose, Keith; Spanier, Stefan; Thapa, Krishna; Bouhali, Othmane; Castaneda Hernandez, Alfredo; Celik, Ali; Dalchenko, Mykhailo; De Mattia, Marco; Delgado, Andrea; Dildick, Sven; Eusebi, Ricardo; Gilmore, Jason; Huang, Tao; Kamon, Teruki; Mueller, Ryan; Pakhotin, Yuriy; Patel, Rishi; Perloff, Alexx; Perniè, Luca; Rathjens, Denis; Safonov, Alexei; Tatarinov, Aysen; Ulmer, Keith; Akchurin, Nural; Damgov, Jordan; De Guio, Federico; Dudero, Phillip Russell; Faulkner, James; Gurpinar, Emine; Kunori, Shuichi; Lamichhane, Kamal; Lee, Sung Won; Libeiro, Terence; Peltola, Timo; Undleeb, Sonaina; Volobouev, Igor; Wang, Zhixing; Greene, Senta; Gurrola, Alfredo; Janjam, Ravi; Johns, Willard; Maguire, Charles; Melo, Andrew; Ni, Hong; Sheldon, Paul; Tuo, Shengquan; Velkovska, Julia; Xu, Qiao; Arenton, Michael Wayne; Barria, Patrizia; Cox, Bradley; Hirosky, Robert; Ledovskoy, Alexander; Li, Hengne; Neu, Christopher; Sinthuprasith, Tutanon; Sun, Xin; Wang, Yanchu; Wolfe, Evan; Xia, Fan; Harr, Robert; Karchin, Paul Edmund; Sturdy, Jared; Zaleski, Shawn; Brodski, Michael; Buchanan, James; Caillol, Cécile; Dasu, Sridhara; Dodd, Laura; Duric, Senka; Gomber, Bhawna; Grothe, Monika; Herndon, Matthew; Hervé, Alain; Hussain, Usama; Klabbers, Pamela; Lanaro, Armando; Levine, Aaron; Long, Kenneth; Loveless, Richard; Pierro, Giuseppe Antonio; Polese, Giovanni; Ruggles, Tyler; Savin, Alexander; Smith, Nicholas; Smith, Wesley H; Taylor, Devin; Woods, Nathaniel

2017-12-01

A search for a signal consistent with the type-III seesaw mechanism in events with three or more electrons or muons is presented. The data sample consists of proton-proton collisions at $ \\sqrt{s} = $ 13 TeV collected by the CMS experiment at the LHC in 2016 and corresponds to an integrated luminosity of 35.9 fb$^{-1}$. Selection criteria based on the number of leptons and the invariant mass of opposite-sign lepton pairs are used to distinguish the signal from the standard model background. The observations are consistent with the expectations from standard model processes. The results are used to place limits on the production of heavy fermions of the type-III seesaw model as a function of the branching ratio to each lepton flavor. In the scenario of equal branching fractions to each lepton flavor, heavy fermions with masses below 840 GeV are excluded. This is the most sensitive probe to date of the type-III seesaw mechanism.

Search for Evidence of the Type-III Seesaw Mechanism in Multilepton Final States in Proton-Proton Collisions at √{s }=13 TeV

Science.gov (United States)

Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Ambrogi, F.; Asilar, E.; Bergauer, T.; Brandstetter, J.; Brondolin, E.; Dragicevic, M.; Erö, J.; Flechl, M.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Grossmann, J.; Hrubec, J.; Jeitler, M.; König, A.; Krammer, N.; Krätschmer, I.; Liko, D.; Madlener, T.; Mikulec, I.; Pree, E.; Rabady, D.; Rad, N.; Rohringer, H.; Schieck, J.; Schöfbeck, R.; Spanring, M.; Spitzbart, D.; Waltenberger, W.; Wittmann, J.; Wulz, C.-E.; Zarucki, M.; Chekhovsky, V.; Mossolov, V.; Suarez Gonzalez, J.; De Wolf, E. A.; Di Croce, D.; Janssen, X.; Lauwers, J.; Van Haevermaet, H.; Van Mechelen, P.; Van Remortel, N.; Abu Zeid, S.; Blekman, F.; D'Hondt, J.; De Bruyn, I.; De Clercq, J.; Deroover, K.; Flouris, G.; Lontkovskyi, D.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Tavernier, S.; Van Doninck, W.; Van Mulders, P.; Van Parijs, I.; Brun, H.; Clerbaux, B.; De Lentdecker, G.; Delannoy, H.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Luetic, J.; Maerschalk, T.; Marinov, A.; Randle-conde, A.; Seva, T.; Vander Velde, C.; Vanlaer, P.; Vannerom, D.; Yonamine, R.; Zenoni, F.; Zhang, F.; Cimmino, A.; Cornelis, T.; Dobur, D.; Fagot, A.; Gul, M.; Khvastunov, I.; Poyraz, D.; Roskas, C.; Salva, S.; Tytgat, M.; Verbeke, W.; Zaganidis, N.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; De Visscher, S.; Delaere, C.; Delcourt, M.; Francois, B.; Giammanco, A.; Jafari, A.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Aldá Júnior, W. L.; Alves, F. L.; Alves, G. A.; Brito, L.; Correa Martins Junior, M.; Hensel, C.; Moraes, A.; Pol, M. E.; Rebello Teles, P.; Belchior Batista Das Chagas, E.; Carvalho, W.; Chinellato, J.; Custódio, A.; Da Costa, E. M.; Da Silveira, G. G.; De Jesus Damiao, D.; Fonseca De Souza, S.; Huertas Guativa, L. M.; Malbouisson, H.; Melo De Almeida, M.; Mora Herrera, C.; Mundim, L.; Nogima, H.; Santoro, A.; Sznajder, A.; Tonelli Manganote, E. J.; Torres Da Silva De Araujo, F.; Vilela Pereira, A.; Ahuja, S.; Bernardes, C. A.; Tomei, T. R. Fernandez Perez; Gregores, E. M.; Mercadante, P. G.; Novaes, S. F.; Padula, Sandra S.; Romero Abad, D.; Ruiz Vargas, J. C.; Aleksandrov, A.; Hadjiiska, R.; Iaydjiev, P.; Misheva, M.; Rodozov, M.; Shopova, M.; Stoykova, S.; Sultanov, G.; Dimitrov, A.; Glushkov, I.; Litov, L.; Pavlov, B.; Petkov, P.; Fang, W.; Gao, X.; Ahmad, M.; Bian, J. G.; Chen, G. M.; Chen, H. S.; Chen, M.; Chen, Y.; Jiang, C. H.; Leggat, D.; Liao, H.; Liu, Z.; Romeo, F.; Shaheen, S. M.; Spiezia, A.; Tao, J.; Wang, C.; Wang, Z.; Yazgan, E.; Zhang, H.; Zhao, J.; Ban, Y.; Chen, G.; Li, Q.; Liu, S.; Mao, Y.; Qian, S. J.; Wang, D.; Xu, Z.; Avila, C.; Cabrera, A.; Chaparro Sierra, L. F.; Florez, C.; González Hernández, C. F.; Ruiz Alvarez, J. D.; Courbon, B.; Godinovic, N.; Lelas, D.; Puljak, I.; Ribeiro Cipriano, P. M.; Sculac, T.; Antunovic, Z.; Kovac, M.; Brigljevic, V.; Ferencek, D.; Kadija, K.; Mesic, B.; Starodumov, A.; Susa, T.; Ather, M. W.; Attikis, A.; Mavromanolakis, G.; Mousa, J.; Nicolaou, C.; Ptochos, F.; Razis, P. A.; Rykaczewski, H.; Finger, M.; Finger, M.; Carrera Jarrin, E.; El-khateeb, E.; Elgammal, S.; Ellithi Kamel, A.; Dewanjee, R. K.; Kadastik, M.; Perrini, L.; Raidal, M.; Tiko, A.; Veelken, C.; Eerola, P.; Pekkanen, J.; Voutilainen, M.; Härkönen, J.; Järvinen, T.; Karimäki, V.; Kinnunen, R.; Lampén, T.; Lassila-Perini, K.; Lehti, S.; Lindén, T.; Luukka, P.; Tuominen, E.; Tuominiemi, J.; Tuovinen, E.; Talvitie, J.; Tuuva, T.; Besancon, M.; Couderc, F.; Dejardin, M.; Denegri, D.; Faure, J. L.; Ferri, F.; Ganjour, S.; Ghosh, S.; Givernaud, A.; Gras, P.; Hamel de Monchenault, G.; Jarry, P.; Kucher, I.; Locci, E.; Machet, M.; Malcles, J.; Negro, G.; Rander, J.; Rosowsky, A.; Sahin, M. Ã.-.; Titov, M.; Abdulsalam, A.; Antropov, I.; Baffioni, S.; Beaudette, F.; Busson, P.; Cadamuro, L.; Charlot, C.; Granier de Cassagnac, R.; Jo, M.; Lisniak, S.; Lobanov, A.; Martin Blanco, J.; Nguyen, M.; Ochando, C.; Ortona, G.; Paganini, P.; Pigard, P.; Regnard, S.; Salerno, R.; Sauvan, J. B.; Sirois, Y.; Stahl Leiton, A. G.; Strebler, T.; Yilmaz, Y.; Zabi, A.; Zghiche, A.; Agram, J.-L.; Andrea, J.; Bloch, D.; Brom, J.-M.; Buttignol, M.; Chabert, E. C.; Chanon, N.; Collard, C.; Conte, E.; Coubez, X.; Fontaine, J.-C.; Gelé, D.; Goerlach, U.; Jansová, M.; Le Bihan, A.-C.; Tonon, N.; Van Hove, P.; Gadrat, S.; Beauceron, S.; Bernet, C.; Boudoul, G.; Chierici, R.; Contardo, D.; Depasse, P.; El Mamouni, H.; Fay, J.; Finco, L.; Gascon, S.; Gouzevitch, M.; Grenier, G.; Ille, B.; Lagarde, F.; Laktineh, I. B.; Lethuillier, M.; Mirabito, L.; Pequegnot, A. L.; Perries, S.; Popov, A.; Sordini, V.; Vander Donckt, M.; Viret, S.; Toriashvili, T.; Lomidze, D.; Autermann, C.; Beranek, S.; Feld, L.; Kiesel, M. K.; Klein, K.; Lipinski, M.; Preuten, M.; Schomakers, C.; Schulz, J.; Verlage, T.; Albert, A.; Dietz-Laursonn, E.; Duchardt, D.; Endres, M.; Erdmann, M.; Erdweg, S.; Esch, T.; Fischer, R.; Güth, A.; Hamer, M.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Knutzen, S.; Merschmeyer, M.; Meyer, A.; Millet, P.; Mukherjee, S.; Olschewski, M.; Padeken, K.; Pook, T.; Radziej, M.; Reithler, H.; Rieger, M.; Scheuch, F.; Teyssier, D.; Thüer, S.; Flügge, G.; Kargoll, B.; Kress, T.; Künsken, A.; Lingemann, J.; Müller, T.; Nehrkorn, A.; Nowack, A.; Pistone, C.; Pooth, O.; Stahl, A.; Aldaya Martin, M.; Arndt, T.; Asawatangtrakuldee, C.; Beernaert, K.; Behnke, O.; Behrens, U.; Bermúdez Martínez, A.; Bin Anuar, A. A.; Borras, K.; Botta, V.; Campbell, A.; Connor, P.; Contreras-Campana, C.; Costanza, F.; Diez Pardos, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Eren, E.; Gallo, E.; Garay Garcia, J.; Geiser, A.; Gizhko, A.; Grados Luyando, J. M.; Grohsjean, A.; Gunnellini, P.; Harb, A.; Hauk, J.; Hempel, M.; Jung, H.; Kalogeropoulos, A.; Kasemann, M.; Keaveney, J.; Kleinwort, C.; Korol, I.; Krücker, D.; Lange, W.; Lelek, A.; Lenz, T.; Leonard, J.; Lipka, K.; Lohmann, W.; Mankel, R.; Melzer-Pellmann, I.-A.; Meyer, A. B.; Mittag, G.; Mnich, J.; Mussgiller, A.; Ntomari, E.; Pitzl, D.; Raspereza, A.; Roland, B.; Savitskyi, M.; Saxena, P.; Shevchenko, R.; Spannagel, S.; Stefaniuk, N.; Van Onsem, G. P.; Walsh, R.; Wen, Y.; Wichmann, K.; Wissing, C.; Zenaiev, O.; Bein, S.; Blobel, V.; Centis Vignali, M.; Dreyer, T.; Garutti, E.; Gonzalez, D.; Haller, J.; Hinzmann, A.; Hoffmann, M.; Karavdina, A.; Klanner, R.; Kogler, R.; Kovalchuk, N.; Kurz, S.; Lapsien, T.; Marchesini, I.; Marconi, D.; Meyer, M.; Niedziela, M.; Nowatschin, D.; Pantaleo, F.; Peiffer, T.; Perieanu, A.; Scharf, C.; Schleper, P.; Schmidt, A.; Schumann, S.; Schwandt, J.; Sonneveld, J.; Stadie, H.; Steinbrück, G.; Stober, F. M.; Stöver, M.; Tholen, H.; Troendle, D.; Usai, E.; Vanelderen, L.; Vanhoefer, A.; Vormwald, B.; Akbiyik, M.; Barth, C.; Baur, S.; Butz, E.; Caspart, R.; Chwalek, T.; Colombo, F.; De Boer, W.; Dierlamm, A.; Freund, B.; Friese, R.; Giffels, M.; Gilbert, A.; Haitz, D.; Hartmann, F.; Heindl, S. M.; Husemann, U.; Kassel, F.; Kudella, S.; Mildner, H.; Mozer, M. U.; Müller, Th.; Plagge, M.; Quast, G.; Rabbertz, K.; Schröder, M.; Shvetsov, I.; Sieber, G.; Simonis, H. J.; Ulrich, R.; Wayand, S.; Weber, M.; Weiler, T.; Williamson, S.; Wöhrmann, C.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Topsis-Giotis, I.; Karathanasis, G.; Kesisoglou, S.; Panagiotou, A.; Saoulidou, N.; Evangelou, I.; Foudas, C.; Kokkas, P.; Mallios, S.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Strologas, J.; Triantis, F. A.; Csanad, M.; Filipovic, N.; Pasztor, G.; Bencze, G.; Hajdu, C.; Horvath, D.; Hunyadi, Á.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Makovec, A.; Molnar, J.; Szillasi, Z.; Bartók, M.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Choudhury, S.; Komaragiri, J. R.; Bahinipati, S.; Bhowmik, S.; Mal, P.; Mandal, K.; Nayak, A.; Sahoo, D. K.; Sahoo, N.; Swain, S. K.; Bansal, S.; Beri, S. B.; Bhatnagar, V.; Chawla, R.; Dhingra, N.; Kalsi, A. K.; Kaur, A.; Kaur, M.; Kumar, R.; Kumari, P.; Mehta, A.; Singh, J. B.; Walia, G.; Kumar, Ashok; Shah, Aashaq; Bhardwaj, A.; Chauhan, S.; Choudhary, B. C.; Garg, R. B.; Keshri, S.; Kumar, A.; Malhotra, S.; Naimuddin, M.; Ranjan, K.; Sharma, R.; Sharma, V.; Bhardwaj, R.; Bhattacharya, R.; Bhattacharya, S.; Bhawandeep, U.; Dey, S.; Dutt, S.; Dutta, S.; Ghosh, S.; Majumdar, N.; Modak, A.; Mondal, K.; Mukhopadhyay, S.; Nandan, S.; Purohit, A.; Roy, A.; Roy, D.; Roy Chowdhury, S.; Sarkar, S.; Sharan, M.; Thakur, S.; Behera, P. K.; Chudasama, R.; Dutta, D.; Jha, V.; Kumar, V.; Mohanty, A. K.; Netrakanti, P. K.; Pant, L. M.; Shukla, P.; Topkar, A.; Aziz, T.; Dugad, S.; Mahakud, B.; Mitra, S.; Mohanty, G. B.; Sur, N.; Sutar, B.; Banerjee, S.; Bhattacharya, S.; Chatterjee, S.; Das, P.; Guchait, M.; Jain, Sa.; Kumar, S.; Maity, M.; Majumder, G.; Mazumdar, K.; Sarkar, T.; Wickramage, N.; Chauhan, S.; Dube, S.; Hegde, V.; Kapoor, A.; Kothekar, K.; Pandey, S.; Rane, A.; Sharma, S.; Chenarani, S.; Eskandari Tadavani, E.; Etesami, S. M.; Khakzad, M.; Mohammadi Najafabadi, M.; Naseri, M.; Paktinat Mehdiabadi, S.; Rezaei Hosseinabadi, F.; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Calabria, C.; Caputo, C.; Colaleo, A.; Creanza, D.; Cristella, L.; De Filippis, N.; De Palma, M.; Errico, F.; Fiore, L.; Iaselli, G.; Lezki, S.; Maggi, G.; Maggi, M.; Miniello, G.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Ranieri, A.; Selvaggi, G.; Sharma, A.; Silvestris, L.; Venditti, R.; Verwilligen, P.; Abbiendi, G.; Battilana, C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Chhibra, S. S.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Rossi, A. M.; Rovelli, T.; Siroli, G. P.; Tosi, N.; Albergo, S.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Tricomi, A.; Tuve, C.; Barbagli, G.; Chatterjee, K.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Sguazzoni, G.; Strom, D.; Viliani, L.; Benussi, L.; Bianco, S.; Fabbri, F.; Piccolo, D.; Primavera, F.; Biggio, C.; Calvelli, V.; Ferro, F.; Robutti, E.; Tosi, S.; Brianza, L.; Brivio, F.; Ciriolo, V.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Ghezzi, A.; Govoni, P.; Malberti, M.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Paganoni, M.; Pauwels, K.; Pedrini, D.; Pigazzini, S.; Ragazzi, S.; Tabarelli de Fatis, T.; Buontempo, S.; Cavallo, N.; Di Guida, S.; Fabozzi, F.; Fienga, F.; Iorio, A. O. M.; Khan, W. A.; Lista, L.; Meola, S.; Paolucci, P.; Sciacca, C.; Thyssen, F.; Azzi, P.; Bacchetta, N.; Benato, L.; Bisello, D.; Boletti, A.; Carlin, R.; Carvalho Antunes De Oliveira, A.; Checchia, P.; De Castro Manzano, P.; Dorigo, T.; Gasparini, F.; Gasparini, U.; Gozzelino, A.; Lacaprara, S.; Lujan, P.; Margoni, M.; Meneguzzo, A. T.; Pozzobon, N.; Ronchese, P.; Rossin, R.; Simonetto, F.; Torassa, E.; Zanetti, M.; Zotto, P.; Zumerle, G.; Braghieri, A.; Fallavollita, F.; Magnani, A.; Montagna, P.; Ratti, S. P.; Re, V.; Ressegotti, M.; Riccardi, C.; Salvini, P.; Vai, I.; Vitulo, P.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Ciangottini, D.; Fanò, L.; Lariccia, P.; Leonardi, R.; Manoni, E.; Mantovani, G.; Mariani, V.; Menichelli, M.; Rossi, A.; Santocchia, A.; Spiga, D.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Bernardini, J.; Boccali, T.; Borrello, L.; Castaldi, R.; Ciocci, M. A.; Dell'Orso, R.; Fedi, G.; Giannini, L.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Manca, E.; Mandorli, G.; Martini, L.; Messineo, A.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Barone, L.; Cavallari, F.; Cipriani, M.; Daci, N.; Del Re, D.; Diemoz, M.; Gelli, S.; Longo, E.; Margaroli, F.; Marzocchi, B.; Meridiani, P.; Organtini, G.; Paramatti, R.; Preiato, F.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bartosik, N.; Bellan, R.; Biino, C.; Cartiglia, N.; Cenna, F.; Costa, M.; Covarelli, R.; Degano, A.; Demaria, N.; Kiani, B.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Monteil, E.; Monteno, M.; Obertino, M. M.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Pinna Angioni, G. L.; Ravera, F.; Romero, A.; Ruspa, M.; Sacchi, R.; Shchelina, K.; Sola, V.; Solano, A.; Staiano, A.; Traczyk, P.; Belforte, S.; Casarsa, M.; Cossutti, F.; Della Ricca, G.; Zanetti, A.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Lee, J.; Lee, S.; Lee, S. W.; Moon, C. S.; Oh, Y. D.; Sekmen, S.; Son, D. C.; Yang, Y. C.; Lee, A.; Kim, H.; Moon, D. H.; Oh, G.; Brochero Cifuentes, J. A.; Goh, J.; Kim, T. J.; Cho, S.; Choi, S.; Go, Y.; Gyun, D.; Ha, S.; Hong, B.; Jo, Y.; Kim, Y.; Lee, K.; Lee, K. S.; Lee, S.; Lim, J.; Park, S. K.; Roh, Y.; Almond, J.; Kim, J.; Kim, J. S.; Lee, H.; Lee, K.; Nam, K.; Oh, S. B.; Radburn-Smith, B. C.; Seo, S. h.; Yang, U. K.; Yoo, H. D.; Yu, G. B.; Choi, M.; Kim, H.; Kim, J. H.; Lee, J. S. H.; Park, I. C.; Ryu, G.; Choi, Y.; Hwang, C.; Lee, J.; Yu, I.; Dudenas, V.; Juodagalvis, A.; Vaitkus, J.; Ahmed, I.; Ibrahim, Z. A.; Md Ali, M. A. B.; Mohamad Idris, F.; Wan Abdullah, W. A. T.; Yusli, M. N.; Zolkapli, Z.; Reyes-Almanza, R.; Ramirez-Sanchez, G.; Duran-Osuna, M. C.; Castilla-Valdez, H.; De La Cruz-Burelo, E.; Heredia-De La Cruz, I.; Rabadan-Trejo, R. I.; Lopez-Fernandez, R.; Mejia Guisao, J.; Sanchez-Hernandez, A.; Carrillo Moreno, S.; Oropeza Barrera, C.; Vazquez Valencia, F.; Pedraza, I.; Salazar Ibarguen, H. A.; Uribe Estrada, C.; Morelos Pineda, A.; Krofcheck, D.; Butler, P. H.; Ahmad, A.; Ahmad, M.; Hassan, Q.; Hoorani, H. R.; Saddique, A.; Shah, M. A.; Shoaib, M.; Waqas, M.; Bialkowska, H.; Bluj, M.; Boimska, B.; Frueboes, T.; Górski, M.; Kazana, M.; Nawrocki, K.; Romanowska-Rybinska, K.; Szleper, M.; Zalewski, P.; Bunkowski, K.; Byszuk, A.; Doroba, K.; Kalinowski, A.; Konecki, M.; Krolikowski, J.; Misiura, M.; Olszewski, M.; Pyskir, A.; Walczak, M.; Bargassa, P.; Beirão Da Cruz E Silva, C.; Calpas, B.; Di Francesco, A.; Faccioli, P.; Gallinaro, M.; Hollar, J.; Leonardo, N.; Lloret Iglesias, L.; Nemallapudi, M. V.; Seixas, J.; Toldaiev, O.; Vadruccio, D.; Varela, J.; Afanasiev, S.; Bunin, P.; Gavrilenko, M.; Golutvin, I.; Gorbunov, I.; Kamenev, A.; Karjavin, V.; Lanev, A.; Malakhov, A.; Matveev, V.; Palichik, V.; Perelygin, V.; Shmatov, S.; Shulha, S.; Skatchkov, N.; Smirnov, V.; Voytishin, N.; Zarubin, A.; Ivanov, Y.; Kim, V.; Kuznetsova, E.; Levchenko, P.; Murzin, V.; Oreshkin, V.; Smirnov, I.; Sulimov, V.; Uvarov, L.; Vavilov, S.; Vorobyev, A.; Andreev, Yu.; Dermenev, A.; Gninenko, S.; Golubev, N.; Karneyeu, A.; Kirsanov, M.; Krasnikov, N.; Pashenkov, A.; Tlisov, D.; Toropin, A.; Epshteyn, V.; Gavrilov, V.; Lychkovskaya, N.; Popov, V.; Pozdnyakov, I.; Safronov, G.; Spiridonov, A.; Stepennov, A.; Toms, M.; Vlasov, E.; Zhokin, A.; Aushev, T.; Bylinkin, A.; Chistov, R.; Danilov, M.; Parygin, P.; Philippov, D.; Polikarpov, S.; Tarkovskii, E.; Andreev, V.; Azarkin, M.; Dremin, I.; Kirakosyan, M.; Terkulov, A.; Baskakov, A.; Belyaev, A.; Boos, E.; Dubinin, M.; Dudko, L.; Ershov, A.; Gribushin, A.; Klyukhin, V.; Kodolova, O.; Lokhtin, I.; Miagkov, I.; Obraztsov, S.; Petrushanko, S.; Savrin, V.; Snigirev, A.; Blinov, V.; Skovpen, Y.; Shtol, D.; Azhgirey, I.; Bayshev, I.; Bitioukov, S.; Elumakhov, D.; Kachanov, V.; Kalinin, A.; Konstantinov, D.; Krychkine, V.; Petrov, V.; Ryutin, R.; Sobol, A.; Troshin, S.; Tyurin, N.; Uzunian, A.; Volkov, A.; Adzic, P.; Cirkovic, P.; Devetak, D.; Dordevic, M.; Milosevic, J.; Rekovic, V.; Alcaraz Maestre, J.; Barrio Luna, M.; Cerrada, M.; Colino, N.; De La Cruz, B.; Delgado Peris, A.; Escalante Del Valle, A.; Fernandez Bedoya, C.; Fernández Ramos, J. P.; Flix, J.; Fouz, M. C.; Garcia-Abia, P.; Gonzalez Lopez, O.; Goy Lopez, S.; Hernandez, J. M.; Josa, M. I.; Pérez-Calero Yzquierdo, A.; Puerta Pelayo, J.; Quintario Olmeda, A.; Redondo, I.; Romero, L.; Soares, M. S.; Álvarez Fernández, A.; de Trocóniz, J. F.; Missiroli, M.; Moran, D.; Cuevas, J.; Erice, C.; Fernandez Menendez, J.; Gonzalez Caballero, I.; González Fernández, J. R.; Palencia Cortezon, E.; Sanchez Cruz, S.; Suárez Andrés, I.; Vischia, P.; Vizan Garcia, J. M.; Cabrillo, I. J.; Calderon, A.; Chazin Quero, B.; Curras, E.; Duarte Campderros, J.; Fernandez, M.; Garcia-Ferrero, J.; Gomez, G.; Lopez Virto, A.; Marco, J.; Martinez Rivero, C.; Martinez Ruiz del Arbol, P.; Matorras, F.; Piedra Gomez, J.; Rodrigo, T.; Ruiz-Jimeno, A.; Scodellaro, L.; Trevisani, N.; Vila, I.; Vilar Cortabitarte, R.; Abbaneo, D.; Auffray, E.; Baillon, P.; Ball, A. H.; Barney, D.; Bianco, M.; Bloch, P.; Bocci, A.; Botta, C.; Camporesi, T.; Castello, R.; Cepeda, M.; Cerminara, G.; Chapon, E.; Chen, Y.; d'Enterria, D.; Dabrowski, A.; Daponte, V.; David, A.; De Gruttola, M.; De Roeck, A.; Di Marco, E.; Dobson, M.; Dorney, B.; du Pree, T.; Dünser, M.; Dupont, N.; Elliott-Peisert, A.; Everaerts, P.; Franzoni, G.; Fulcher, J.; Funk, W.; Gigi, D.; Gill, K.; Glege, F.; Gulhan, D.; Gundacker, S.; Guthoff, M.; Harris, P.; Hegeman, J.; Innocente, V.; Janot, P.; Karacheban, O.; Kieseler, J.; Kirschenmann, H.; Knünz, V.; Kornmayer, A.; Kortelainen, M. J.; Krammer, M.; Lange, C.; Lecoq, P.; Lourenço, C.; Lucchini, M. T.; Malgeri, L.; Mannelli, M.; Martelli, A.; Meijers, F.; Merlin, J. A.; Mersi, S.; Meschi, E.; Milenovic, P.; Moortgat, F.; Mulders, M.; Neugebauer, H.; Orfanelli, S.; Orsini, L.; Pape, L.; Perez, E.; Peruzzi, M.; Petrilli, A.; Petrucciani, G.; Pfeiffer, A.; Pierini, M.; Racz, A.; Reis, T.; Rolandi, G.; Rovere, M.; Sakulin, H.; Schäfer, C.; Schwick, C.; Seidel, M.; Selvaggi, M.; Sharma, A.; Silva, P.; Sphicas, P.; Stakia, A.; Steggemann, J.; Stoye, M.; Tosi, M.; Treille, D.; Triossi, A.; Tsirou, A.; Veckalns, V.; Veres, G. I.; Verweij, M.; Wardle, N.; Zeuner, W. D.; Bertl, W.; Caminada, L.; Deiters, K.; Erdmann, W.; Horisberger, R.; Ingram, Q.; Kaestli, H. C.; Kotlinski, D.; Langenegger, U.; Rohe, T.; Wiederkehr, S. A.; Bachmair, F.; Bäni, L.; Berger, P.; Bianchini, L.; Casal, B.; Dissertori, G.; Dittmar, M.; Donegà, M.; Grab, C.; Heidegger, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Klijnsma, T.; Lustermann, W.; Mangano, B.; Marionneau, M.; Meinhard, M. T.; Meister, D.; Micheli, F.; Musella, P.; Nessi-Tedaldi, F.; Pandolfi, F.; Pata, J.; Pauss, F.; Perrin, G.; Perrozzi, L.; Quittnat, M.; Reichmann, M.; Schönenberger, M.; Shchutska, L.; Tavolaro, V. R.; Theofilatos, K.; Vesterbacka Olsson, M. L.; Wallny, R.; Zhu, D. H.; Aarrestad, T. K.; Amsler, C.; Canelli, M. F.; De Cosa, A.; Del Burgo, R.; Donato, S.; Galloni, C.; Hreus, T.; Kilminster, B.; Ngadiuba, J.; Pinna, D.; Rauco, G.; Robmann, P.; Salerno, D.; Seitz, C.; Takahashi, Y.; Zucchetta, A.; Candelise, V.; Doan, T. H.; Jain, Sh.; Khurana, R.; Kuo, C. M.; Lin, W.; Pozdnyakov, A.; Yu, S. S.; Kumar, Arun; Chang, P.; Chao, Y.; Chen, K. F.; Chen, P. H.; Fiori, F.; Hou, W.-S.; Hsiung, Y.; Liu, Y. F.; Lu, R.-S.; Paganis, E.; Psallidas, A.; Steen, A.; Tsai, J. f.; Asavapibhop, B.; Kovitanggoon, K.; Singh, G.; Srimanobhas, N.; Adiguzel, A.; Boran, F.; Cerci, S.; Damarseckin, S.; Demiroglu, Z. S.; Dozen, C.; Dumanoglu, I.; Girgis, S.; Gokbulut, G.; Guler, Y.; Hos, I.; Kangal, E. E.; Kara, O.; Kayis Topaksu, A.; Kiminsu, U.; Oglakci, M.; Onengut, G.; Ozdemir, K.; Sunar Cerci, D.; Tali, B.; Turkcapar, S.; Zorbakir, I. S.; Zorbilmez, C.; Bilin, B.; Karapinar, G.; Ocalan, K.; Yalvac, M.; Zeyrek, M.; Gülmez, E.; Kaya, M.; Kaya, O.; Tekten, S.; Yetkin, E. A.; Agaras, M. N.; Atay, S.; Cakir, A.; Cankocak, K.; Grynyov, B.; Levchuk, L.; Sorokin, P.; Aggleton, R.; Ball, F.; Beck, L.; Brooke, J. J.; Burns, D.; Clement, E.; Cussans, D.; Davignon, O.; Flacher, H.; Goldstein, J.; Grimes, M.; Heath, G. P.; Heath, H. F.; Jacob, J.; Kreczko, L.; Lucas, C.; Newbold, D. M.; Paramesvaran, S.; Poll, A.; Sakuma, T.; Seif El Nasr-storey, S.; Smith, D.; Smith, V. J.; Bell, K. W.; Belyaev, A.; Brew, C.; Brown, R. M.; Calligaris, L.; Cieri, D.; Cockerill, D. J. A.; Coughlan, J. A.; Harder, K.; Harper, S.; Olaiya, E.; Petyt, D.; Shepherd-Themistocleous, C. H.; Thea, A.; Tomalin, I. R.; Williams, T.; Auzinger, G.; Bainbridge, R.; Breeze, S.; Buchmuller, O.; Bundock, A.; Casasso, S.; Citron, M.; Colling, D.; Corpe, L.; Dauncey, P.; Davies, G.; De Wit, A.; Della Negra, M.; Di Maria, R.; Elwood, A.; Haddad, Y.; Hall, G.; Iles, G.; James, T.; Lane, R.; Laner, C.; Lyons, L.; Magnan, A.-M.; Malik, S.; Mastrolorenzo, L.; Matsushita, T.; Nash, J.; Nikitenko, A.; Palladino, V.; Pesaresi, M.; Raymond, D. M.; Richards, A.; Rose, A.; Scott, E.; Seez, C.; Shtipliyski, A.; Summers, S.; Tapper, A.; Uchida, K.; Vazquez Acosta, M.; Virdee, T.; Winterbottom, D.; Wright, J.; Zenz, S. C.; Cole, J. E.; Hobson, P. R.; Khan, A.; Kyberd, P.; Reid, I. D.; Symonds, P.; Teodorescu, L.; Turner, M.; Borzou, A.; Call, K.; Dittmann, J.; Hatakeyama, K.; Liu, H.; Pastika, N.; Smith, C.; Bartek, R.; Dominguez, A.; Buccilli, A.; Cooper, S. I.; Henderson, C.; Rumerio, P.; West, C.; Arcaro, D.; Avetisyan, A.; Bose, T.; Gastler, D.; Rankin, D.; Richardson, C.; Rohlf, J.; Sulak, L.; Zou, D.; Benelli, G.; Cutts, D.; Garabedian, A.; Hakala, J.; Heintz, U.; Hogan, J. M.; Kwok, K. H. M.; Laird, E.; Landsberg, G.; Mao, Z.; Narain, M.; Pazzini, J.; Piperov, S.; Sagir, S.; Syarif, R.; Yu, D.; Band, R.; Brainerd, C.; Burns, D.; Calderon De La Barca Sanchez, M.; Chertok, M.; Conway, J.; Conway, R.; Cox, P. T.; Erbacher, R.; Flores, C.; Funk, G.; Gardner, M.; Ko, W.; Lander, R.; Mclean, C.; Mulhearn, M.; Pellett, D.; Pilot, J.; Shalhout, S.; Shi, M.; Smith, J.; Squires, M.; Stolp, D.; Tos, K.; Tripathi, M.; Wang, Z.; Bachtis, M.; Bravo, C.; Cousins, R.; Dasgupta, A.; Florent, A.; Hauser, J.; Ignatenko, M.; Mccoll, N.; Saltzberg, D.; Schnaible, C.; Valuev, V.; Bouvier, E.; Burt, K.; Clare, R.; Ellison, J.; Gary, J. W.; Ghiasi Shirazi, S. M. A.; Hanson, G.; Heilman, J.; Jandir, P.; Kennedy, E.; Lacroix, F.; Long, O. R.; Olmedo Negrete, M.; Paneva, M. I.; Shrinivas, A.; Si, W.; Wang, L.; Wei, H.; Wimpenny, S.; Yates, B. R.; Branson, J. G.; Cittolin, S.; Derdzinski, M.; Gerosa, R.; Hashemi, B.; Holzner, A.; Klein, D.; Kole, G.; Krutelyov, V.; Letts, J.; Macneill, I.; Masciovecchio, M.; Olivito, D.; Padhi, S.; Pieri, M.; Sani, M.; Sharma, V.; Simon, S.; Tadel, M.; Vartak, A.; Wasserbaech, S.; Wood, J.; Würthwein, F.; Yagil, A.; Zevi Della Porta, G.; Amin, N.; Bhandari, R.; Bradmiller-Feld, J.; Campagnari, C.; Dishaw, A.; Dutta, V.; Franco Sevilla, M.; George, C.; Golf, F.; Gouskos, L.; Gran, J.; Heller, R.; Incandela, J.; Mullin, S. D.; Ovcharova, A.; Qu, H.; Richman, J.; Stuart, D.; Suarez, I.; Yoo, J.; Anderson, D.; Bendavid, J.; Bornheim, A.; Lawhorn, J. M.; Newman, H. B.; Nguyen, T.; Pena, C.; Spiropulu, M.; Vlimant, J. R.; Xie, S.; Zhang, Z.; Zhu, R. Y.; Andrews, M. B.; Ferguson, T.; Mudholkar, T.; Paulini, M.; Russ, J.; Sun, M.; Vogel, H.; Vorobiev, I.; Weinberg, M.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Mcdermott, K.; Mirman, N.; Patterson, J. R.; Rinkevicius, A.; Ryd, A.; Skinnari, L.; Soffi, L.; Tan, S. M.; Tao, Z.; Thom, J.; Tucker, J.; Wittich, P.; Zientek, M.; Abdullin, S.; Albrow, M.; Apollinari, G.; Apresyan, A.; Apyan, A.; Banerjee, S.; Bauerdick, L. A. T.; Beretvas, A.; Berryhill, J.; Bhat, P. C.; Bolla, G.; Burkett, K.; Butler, J. N.; Canepa, A.; Cerati, G. B.; Cheung, H. W. K.; Chlebana, F.; Cremonesi, M.; Duarte, J.; Elvira, V. D.; Freeman, J.; Gecse, Z.; Gottschalk, E.; Gray, L.; Green, D.; Grünendahl, S.; Gutsche, O.; Harris, R. M.; Hasegawa, S.; Hirschauer, J.; Hu, Z.; Jayatilaka, B.; Jindariani, S.; Johnson, M.; Joshi, U.; Klima, B.; Kreis, B.; Lammel, S.; Lincoln, D.; Lipton, R.; Liu, M.; Liu, T.; Lopes De Sá, R.; Lykken, J.; Maeshima, K.; Magini, N.; Marraffino, J. M.; Maruyama, S.; Mason, D.; McBride, P.; Merkel, P.; Mrenna, S.; Nahn, S.; O'Dell, V.; Pedro, K.; Prokofyev, O.; Rakness, G.; Ristori, L.; Schneider, B.; Sexton-Kennedy, E.; Soha, A.; Spalding, W. J.; Spiegel, L.; Stoynev, S.; Strait, J.; Strobbe, N.; Taylor, L.; Tkaczyk, S.; Tran, N. V.; Uplegger, L.; Vaandering, E. W.; Vernieri, C.; Verzocchi, M.; Vidal, R.; Wang, M.; Weber, H. A.; Whitbeck, A.; Acosta, D.; Avery, P.; Bortignon, P.; Bourilkov, D.; Brinkerhoff, A.; Carnes, A.; Carver, M.; Curry, D.; Field, R. D.; Furic, I. K.; Konigsberg, J.; Korytov, A.; Kotov, K.; Ma, P.; Matchev, K.; Mei, H.; Mitselmakher, G.; Rank, D.; Sperka, D.; Terentyev, N.; Thomas, L.; Wang, J.; Wang, S.; Yelton, J.; Joshi, Y. R.; Linn, S.; Markowitz, P.; Rodriguez, J. L.; Ackert, A.; Adams, T.; Askew, A.; Hagopian, S.; Hagopian, V.; Johnson, K. F.; Kolberg, T.; Martinez, G.; Perry, T.; Prosper, H.; Saha, A.; Santra, A.; Yohay, R.; Baarmand, M. M.; Bhopatkar, V.; Colafranceschi, S.; Hohlmann, M.; Noonan, D.; Roy, T.; Yumiceva, F.; Adams, M. R.; Apanasevich, L.; Berry, D.; Betts, R. R.; Cavanaugh, R.; Chen, X.; Evdokimov, O.; Gerber, C. E.; Hangal, D. A.; Hofman, D. J.; Jung, K.; Kamin, J.; Sandoval Gonzalez, I. D.; Tonjes, M. B.; Trauger, H.; Varelas, N.; Wang, H.; Wu, Z.; Zhang, J.; Bilki, B.; Clarida, W.; Dilsiz, K.; Durgut, S.; Gandrajula, R. P.; Haytmyradov, M.; Khristenko, V.; Merlo, J.-P.; Mermerkaya, H.; Mestvirishvili, A.; Moeller, A.; Nachtman, J.; Ogul, H.; Onel, Y.; Ozok, F.; Penzo, A.; Snyder, C.; Tiras, E.; Wetzel, J.; Yi, K.; Blumenfeld, B.; Cocoros, A.; Eminizer, N.; Fehling, D.; Feng, L.; Gritsan, A. V.; Maksimovic, P.; Roskes, J.; Sarica, U.; Swartz, M.; Xiao, M.; You, C.; Al-bataineh, A.; Baringer, P.; Bean, A.; Boren, S.; Bowen, J.; Castle, J.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Mcbrayer, W.; Murray, M.; Royon, C.; Sanders, S.; Schmitz, E.; Stringer, R.; Tapia Takaki, J. D.; Wang, Q.; Ivanov, A.; Kaadze, K.; Maravin, Y.; Mohammadi, A.; Saini, L. K.; Skhirtladze, N.; Toda, S.; Rebassoo, F.; Wright, D.; Anelli, C.; Baden, A.; Baron, O.; Belloni, A.; Calvert, B.; Eno, S. C.; Ferraioli, C.; Hadley, N. J.; Jabeen, S.; Jeng, G. Y.; Kellogg, R. G.; Kunkle, J.; Mignerey, A. C.; Ricci-Tam, F.; Shin, Y. H.; Skuja, A.; Tonwar, S. C.; Abercrombie, D.; Allen, B.; Azzolini, V.; Barbieri, R.; Baty, A.; Bi, R.; Brandt, S.; Busza, W.; Cali, I. A.; D'Alfonso, M.; Demiragli, Z.; Gomez Ceballos, G.; Goncharov, M.; Hsu, D.; Iiyama, Y.; Innocenti, G. M.; Klute, M.; Kovalskyi, D.; Lai, Y. S.; Lee, Y.-J.; Levin, A.; Luckey, P. D.; Maier, B.; Marini, A. C.; Mcginn, C.; Mironov, C.; Narayanan, S.; Niu, X.; Paus, C.; Roland, C.; Roland, G.; Salfeld-Nebgen, J.; Stephans, G. S. F.; Tatar, K.; Velicanu, D.; Wang, J.; Wang, T. W.; Wyslouch, B.; Benvenuti, A. C.; Chatterjee, R. M.; Evans, A.; Hansen, P.; Kalafut, S.; Kubota, Y.; Lesko, Z.; Mans, J.; Nourbakhsh, S.; Ruckstuhl, N.; Rusack, R.; Turkewitz, J.; Acosta, J. G.; Oliveros, S.; Avdeeva, E.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Kamalieddin, R.; Kravchenko, I.; Monroy, J.; Siado, J. E.; Snow, G. R.; Stieger, B.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alverson, G.; Barberis, E.; Hortiangtham, A.; Massironi, A.; Morse, D. M.; Nash, D.; Orimoto, T.; Teixeira De Lima, R.; Trocino, D.; Wood, D.; Bhattacharya, S.; Charaf, O.; Hahn, K. A.; Mucia, N.; Odell, N.; Pollack, B.; Schmitt, M. H.; Sung, K.; Trovato, M.; Velasco, M.; Dev, N.; Hildreth, M.; Hurtado Anampa, K.; Jessop, C.; Karmgard, D. J.; Kellams, N.; Lannon, K.; Loukas, N.; Marinelli, N.; Meng, F.; Mueller, C.; Musienko, Y.; Planer, M.; Reinsvold, A.; Ruchti, R.; Smith, G.; Taroni, S.; Wayne, M.; Wolf, M.; Woodard, A.; Alimena, J.; Antonelli, L.; Bylsma, B.; Durkin, L. S.; Flowers, S.; Francis, B.; Hart, A.; Hill, C.; Ji, W.; Liu, B.; Luo, W.; Puigh, D.; Winer, B. L.; Wulsin, H. W.; Benaglia, A.; Cooperstein, S.; Driga, O.; Elmer, P.; Hardenbrook, J.; Hebda, P.; Higginbotham, S.; Lange, D.; Luo, J.; Marlow, D.; Mei, K.; Ojalvo, I.; Olsen, J.; Palmer, C.; Piroué, P.; Stickland, D.; Tully, C.; Malik, S.; Norberg, S.; Barker, A.; Barnes, V. E.; Das, S.; Folgueras, S.; Gutay, L.; Jha, M. K.; Jones, M.; Jung, A. W.; Khatiwada, A.; Miller, D. H.; Neumeister, N.; Peng, C. C.; Schulte, J. F.; Sun, J.; Wang, F.; Xie, W.; Cheng, T.; Parashar, N.; Stupak, J.; Adair, A.; Akgun, B.; Chen, Z.; Ecklund, K. M.; Geurts, F. J. M.; Guilbaud, M.; Li, W.; Michlin, B.; Northup, M.; Padley, B. P.; Roberts, J.; Rorie, J.; Tu, Z.; Zabel, J.; Bodek, A.; de Barbaro, P.; Demina, R.; Duh, Y. t.; Ferbel, T.; Galanti, M.; Garcia-Bellido, A.; Han, J.; Hindrichs, O.; Khukhunaishvili, A.; Lo, K. H.; Tan, P.; Verzetti, M.; Ciesielski, R.; Goulianos, K.; Mesropian, C.; Agapitos, A.; Chou, J. P.; Christos, M.; Feigelis, K.; Gershtein, Y.; Gómez Espinosa, T. A.; Halkiadakis, E.; Heindl, M.; Hughes, E.; Kaplan, S.; Kunnawalkam Elayavalli, R.; Kyriacou, S.; Lath, A.; Montalvo, R.; Nash, K.; Osherson, M.; Saka, H.; Salur, S.; Schnetzer, S.; Sheffield, D.; Somalwar, S.; Stone, R.; Thomas, S.; Thomassen, P.; Walker, M.; Zhou, B.; Delannoy, A. G.; Foerster, M.; Heideman, J.; Riley, G.; Rose, K.; Spanier, S.; Thapa, K.; Bouhali, O.; Castaneda Hernandez, A.; Celik, A.; Dalchenko, M.; De Mattia, M.; Delgado, A.; Dildick, S.; Eusebi, R.; Gilmore, J.; Huang, T.; Kamon, T.; Mueller, R.; Pakhotin, Y.; Patel, R.; Perloff, A.; Perniè, L.; Rathjens, D.; Safonov, A.; Tatarinov, A.; Ulmer, K. A.; Akchurin, N.; Damgov, J.; De Guio, F.; Dudero, P. R.; Faulkner, J.; Gurpinar, E.; Kunori, S.; Lamichhane, K.; Lee, S. W.; Libeiro, T.; Peltola, T.; Undleeb, S.; Volobouev, I.; Wang, Z.; Greene, S.; Gurrola, A.; Janjam, R.; Johns, W.; Maguire, C.; Melo, A.; Ni, H.; Sheldon, P.; Tuo, S.; Velkovska, J.; Xu, Q.; Arenton, M. W.; Barria, P.; Cox, B.; Hirosky, R.; Ledovskoy, A.; Li, H.; Neu, C.; Sinthuprasith, T.; Sun, X.; Wang, Y.; Wolfe, E.; Xia, F.; Harr, R.; Karchin, P. E.; Sturdy, J.; Zaleski, S.; Brodski, M.; Buchanan, J.; Caillol, C.; Dasu, S.; Dodd, L.; Duric, S.; Gomber, B.; Grothe, M.; Herndon, M.; Hervé, A.; Hussain, U.; Klabbers, P.; Lanaro, A.; Levine, A.; Long, K.; Loveless, R.; Pierro, G. A.; Polese, G.; Ruggles, T.; Savin, A.; Smith, N.; Smith, W. H.; Taylor, D.; Woods, N.; CMS Collaboration

2017-12-01

A search for a signal consistent with the type-III seesaw mechanism in events with three or more electrons or muons is presented. The data sample consists of proton-proton collisions at √{s }=13 TeV collected by the CMS experiment at the LHC in 2016 and corresponds to an integrated luminosity of 35.9 fb-1 . Selection criteria based on the number of leptons and the invariant mass of oppositely charged lepton pairs are used to distinguish the signal from the standard model background. The observations are consistent with the expectations from standard model processes. The results are used to place limits on the production of heavy fermions of the type-III seesaw model as a function of the branching ratio to each lepton flavor. In the scenario of equal branching fractions to each lepton flavor, heavy fermions with masses below 840 GeV are excluded. This is the most sensitive probe to date of the type-III seesaw mechanism.

Vitrification of human germinal vesicle oocytes; before or after in vitro maturation?

Directory of Open Access Journals (Sweden)

Evangelia Kasapi

2017-03-01

Full Text Available Background The use of immature oocytes derived from stimulated cycles could be of great importance, particularly for urgent fertility preservation cases. The current study aimed to determine whether in vitro maturation (IVM was more successful before or after vitrification of these oocytes. Materials and Methods This prospective study was performed in a private in vitro fertilization (IVF center. We collected 318 germinal vesicle (GV oocytes from 104 stimulated oocyte donation cycles. Oocytes were divided into two groups according to whether vitrification was applied at the GV stage (group 1 or in vitro matured to the metaphase II (MII stage and then vitrified (group 2. In the control group (group 3, oocytes were in vitro matured without vitrification. In all three groups, we assessed survival rate after warming, maturation rate, and MII-spindle/chromosome configurations. The chi-square test was used to compare rates between the three groups. Statistical significance was defined at P<0.05 and we used Bonferroni criterion to assess statistical significance regarding the various pairs of groups. The Statistical Package for the Social Sciences version 17.0 was used to perform statistical analysis. Results There was no significant difference in the survival rate after vitrification and warming of GV (93.5% and MII oocytes (90.8%. A significantly higher maturation rate occurred when IVM was performed before vitrification (82.9% compared to after vitrification (51%. There was no significant difference in the incidence of normal spindle/ chromosome configurations among warmed oocytes matured in vitro before (50.0% or after (41.2% vitrification. However, a higher incidence of normal spindle/chromosome configurations existed in the in vitro matured oocytes which were not subjected to vitrification (fresh oocytes, 77.9%. Conclusion In stimulated cycles, vitrification of in vitro matured MII oocytes rather than GV oocytes seems to be more efficient. This

Ignoring the data and endangering children: why the mature minor standard for medical decision making must be abandoned.

Science.gov (United States)

Cherry, Mark J

2013-06-01

In Roper v. Simmons (2005) the United States Supreme Court announced a paradigm shift in jurisprudence. Drawing specifically on mounting scientific evidence that adolescents are qualitatively different from adults in their decision-making capacities, the Supreme Court recognized that adolescents are not adults in all but age. The Court concluded that the overwhelming weight of the psychological and neurophysiological data regarding brain maturation supports the conclusion that adolescents are qualitatively different types of agents than adult persons. The Supreme Court further solidified its position regarding adolescents as less than fully mature and responsible decisionmakers in Graham v. Florida (2010) and Miller v. Alabama (2012). In each case, the Court concluded that the scientific evidence does not support the conclusion that children under 18 years of age possess adult capacities for personal agency, rationality, and mature choice. This study explores the implications of the Supreme Court decisions in Roper v. Simmons, Graham v. Florida, and Miller v. Alabama for the "mature minor" standard for medical decision making. It argues that the Supreme Court's holdings in Roper, Graham, and Miller require no less than a radical reassessment of how healthcare institutions, courts of law, and public policy are obliged to regard minors as medical decisionmakers. The "mature minor" standard for medical decision making must be abandoned.

Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

Science.gov (United States)

Spellward, Paul

Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

Immunohistochemical expression of mitochondrial membrane complexes (MMCs) I, III, IV and V in malignant and benign periampullary epithelium: a potential target for drug therapy of periampullary cancer?

International Nuclear Information System (INIS)

Aloysius, Mark M; Zaitoun, Abed M; Bates, Timothy E; Ilyas, Mohammad; Constantin-Teodosiu, Dumitru; Rowlands, Brian J; Lobo, Dileep N

2010-01-01

Mitochondrial membrane complexes (MMCs) are key mediators of cellular oxidative phosphorylation, and inhibiting them could lead to cell death. No published data are available on the relative abundance of MMCs in different periampullary cancers. Therefore, we studied the expression profile of MMCs I, III, IV and V in periampullary cancers, reactive pancreatitis, normal pancreas and chronic pancreatitis. This was a retrospective study on tissue microarrays constructed from formalin-fixed paraffin-embedded tissue from 126 consecutive patients (cancer = 104, chronic pancreatitis = 22) undergoing pancreatic resections between June 2001 and June 2006. 78 specimens of chronic pancreatitis tissue were obtained adjacent to areas of cancer. Normal pancreatic tissue was obtained from the resection specimens in a total of 30 patients. Metastatic tumours in 61 regional lymph nodes from 61 patients were also studied. MMCs I, III, IV and V were highly expressed (p < 0.05) in all primary periampullary cancers compared with metastatic lymph nodes and adjacent benign pancreas. MMCs III, IV and V were highly expressed in all cancers regardless of type compared with chronic pancreatitis (p < 0.05). Higher expression of MMCs I and V was associated with better survival and may, in part, relate to lower expression of these MMCs in poorly differentiated tumours compared with well and moderately differentiated tumours. Differential expression of MMCs III, IV and V in primary periampullary cancers compared with adjacent benign periampullary tissue and chronic pancreatitis is a novel finding, which may render them attractive anticancer targets

Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

Science.gov (United States)

Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

2016-07-20

Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

Heterogeneous Silicon III-V Mode-Locked Lasers

Science.gov (United States)

Davenport, Michael Loehrlein

Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

Targeting of Escherichia coli F4 fimbriae to Fcgamma receptors enhances the maturation of porcine dendritic cells.

Science.gov (United States)

Devriendt, Bert; Verdonck, Frank; Summerfield, Artur; Goddeeris, Bruno M; Cox, Eric

2010-06-15

F4(+) enterotoxigenic Escherichia coli (ETEC) infections are an important cause of postweaning diarrhoea in piglets and an oral immunization of piglets with purified F4 fimbriae protects them from a subsequent F4(+) ETEC infection. However, oral immunization of suckling piglets is hampered due to the immature status of their immune system. Targeting of antigens to Fcgamma receptors (FcgammaR) on human and murine dendritic cells (DC) has been shown to enhance DC maturation and both humoral and cellular immune responses. To investigate the effect of F4 fimbriae incorporated in immune complexes (F4-IC) on porcine DC, we used porcine monocytic-derived DC (MoDC) as a model system. The results in this study demonstrate that FcgammaRI, II and III mRNA is expressed by porcine MoDC. Furthermore, we show that FcgammaRII and III are expressed on the cell surface and that F4-IC are internalized by MoDC via FcgammaR. This FcgammaR ligation induced a significantly enhanced expression of Major Histocompatibility complex (MHCII) class II and the costimulatory molecules CD80/86 and CD40 by MoDC compared with immature MoDC. Furthermore, the phagocytic capacity of F4-IC stimulated MoDC was reduced as evidenced by a reduced uptake of DQ-ovalbumin and FITC-dextran. In an allogenic and autologous mixed lymphocyte reaction, these F4-IC-activated MoDC showed an improved T cell stimulatory capacity in comparison with immature MoDC. The F4-IC induced DC maturation correlated with significant higher expression levels of several pro-inflammatory cytokines such as interleukine (IL) 1beta, IL-6 and Tumor necrosis factor alpha, the chemokine IL-8 and IL-12p40 in comparison with immature MoDC. Altogether, these results clearly demonstrate that FcgammaR engagement enhances the maturation of porcine MoDC, which may suggest that antigen targeting to FcgammaR on DC could improve vaccine design against infections. Copyright 2009 Elsevier B.V. All rights reserved.

Advanced megaesophagus (Group III secondary to vector-borne Chagas disease in a 20-month-old infant

Directory of Open Access Journals (Sweden)

Anis Rassi

2012-04-01

Full Text Available The authors report the case of a female infant with Group III (or Grade III megaesophagus secondary to vector-borne Chagas disease, resulting in severe malnutrition that reversed after surgery (Heller technique. The infant was then treated with the antiparasitic drug benznidazole, and the infection was cured, as demonstrated serologically and parasitologically. After follow-up of several years without evidence of disease, with satisfactory weight and height development, the patient had her first child at age 23, in whom serological tests for Chagas disease yielded negative results. Thirty years after the initial examination, the patient's electrocardiogram, echocardiogram, and chest radiography remained normal.

Cilostazol May Improve Maturation Rates and Durability of Vascular Access for Hemodialysis.

Science.gov (United States)

Russell, Todd E; Kasper, Gregory C; Seiwert, Andrew J; Comerota, Anthony J; Lurie, Fedor

2017-04-01

Cilostazol is effective in controlling pathophysiological pathways similar or identical to those involved in nonmaturation and failure of the arteriovenous access. This case-control study examined whether cilostazol would improve maturation rates and durability of vascular access for hemodialysis. The treatment group included 33 patients who received cilostazol for ≥30 days prior to creation of a dialysis access and continued with cilostazol therapy for ≥60 days after surgery. The matched (gender, age, race, diabetes, and the year of surgery) control group included 116 patients who underwent the same procedure but did not receive cilostazol prior to and at least 3 months after surgery. Primary outcomes were maturation and, for those that matured, time of functioning access, defined as the time from the first use to irreparable failure of the access. Secondary outcomes were time to maturation, complications, and time to first complication. Study group patients were 3.8 times more likely to experience fistula maturation compared to the controls (88% vs 66%, RR = 3.8, 95% confidence interval: 1.3-11.6, P = .016). Fewer patients in the study group had complications (76% vs 92%, P = .025), and the time from construction of the fistula to the first complication was longer (345.6 ± 441 days vs 198.3 ± 185.0 days, P = .025). Time to maturation was similar in both groups (119.3 ± 62.9 days vs 100.2 ± 61.7 days, P = .2). However, once matured, time to failure was significantly longer in the treatment group (903.7 ± 543.6 vs 381.6 ± 317.2 days, P = .001). Multivariate analysis confirmed that the likelihood of maturation was significantly higher in the treatment group patients. These results suggest that dialysis access patients may benefit from preoperative and postoperative cilostazol therapy. If confirmed by a randomized trial, this treatment will have a major beneficial impact on patients dependent on a well-functioning access for their hemodialysis.

Apolipoproteins C-II and C-III as nutritional markers unaffected by inflammation.

Science.gov (United States)

Isshiki, Miwa; Hirayama, Satoshi; Ueno, Tsuyoshi; Ito, Masayuki; Furuta, Ayaka; Yano, Kouji; Yamatani, Kotoko; Sugihara, Masami; Idei, Mayumi; Miida, Takashi

2018-06-01

Rapid turnover proteins (RTPs), such as transthyretin (TTR), retinol binding protein (RBP), and transferrin (Tf), provide an accurate assessment of nutritional status but are susceptible to inflammation. Lipid-related markers, which have short half-lives in serum, may be better suited for nutritional assessment. We sought to identify sensitive nutritional markers unaffected by inflammation. Fasting serum samples were collected from 30 malnourished inpatients and 25 healthy volunteers. Malnourished inpatients were divided into 2 groups: a low-C-reactive protein (CRP) group (CRP group (CRP ≥ 20 mg/l, n = 15). Lipid-related markers, traditional nutritional markers, RTPs, micronutrients, and ketone bodies were measured and compared among the groups. Apolipoprotein (Apo)C-II and ApoC-III concentrations were lower in malnourished inpatients than in the control group. There was no significant difference in ApoC-II and ApoC-III between the low- and high-CRP groups. Carnitine transporters and ketone bodies did not show a significant difference among the three groups. Albumin, TTR, RBP, and Tf concentrations were lowest in the high-CRP group, intermediate in the low-CRP group, and highest in the control group. These results indicate that ApoC-II and ApoC-III are appropriate nutritional biomarkers unaffected by inflammation. Copyright © 2018 Elsevier B.V. All rights reserved.

Maturity of hospital information systems: Most important influencing factors.

Science.gov (United States)

Vidal Carvalho, João; Rocha, Álvaro; Abreu, António

2017-07-01

Maturity models facilitate organizational management, including information systems management, with hospital organizations no exception. This article puts forth a study carried out with a group of experts in the field of hospital information systems management with a view to identifying the main influencing factors to be included in an encompassing maturity model for hospital information systems management. This study is based on the results of a literature review, which identified maturity models in the health field and relevant influencing factors. The development of this model is justified to the extent that the available maturity models for the hospital information systems management field reveal multiple limitations, including lack of detail, absence of tools to determine their maturity and lack of characterization for stages of maturity structured by different influencing factors.

Magnetocaloric properties of manganese(III) porphyrins bearing 2,6-di-tert-butylphenol groups

Energy Technology Data Exchange (ETDEWEB)

Korolev, V.V., E-mail: vvk@isc-ras.ru [G. A. Krestov Institute of Solution Chemistry of the Russian Academy of Sciences, Akademicheskaya str., 1, Ivanovo 153045 (Russian Federation); Lomova, T.N.; Maslennikova, A.N.; Korolev, D.V. [G. A. Krestov Institute of Solution Chemistry of the Russian Academy of Sciences, Akademicheskaya str., 1, Ivanovo 153045 (Russian Federation); Shpakovsky, D.B.; Zhang, Jianwei; Milaeva, E.R. [Lomonosov Moscow State University, Department of Medicinal Chemistry and Fine Organic Synthesis, Moscow 119991 (Russian Federation)

2016-03-01

Magnetocaloric effect (MCE) and heat capacity during the magnetization of (5,10,15,20-tetrakis(3,5-di-tert-butyl-4-hydroxyphenyl)porphynato) manganese (III) chloride (1), (5-(4-hydroxyphenyl)-10,15,20-tris(3,5-di-tert-butyl-4-hydroxyphenyl) porphynato) manganese (III) chloride (2), and (5-(4-palmitoyloxyphenyl)-10,15,20-tris(3,5-di-tert-butyl-4-hydroxyphenyl) porphynato) manganese (III) chloride (3) in their aqueous suspensions were determined by the microcalorimetric method over the temperature range of 278–320 K and in magnetic fields from 0 to 1 T. MCE was positive for all complexes studied, i.e. the magnetic field impression under adiabatic conditions led to an increase in temperature of the complexes suspensions. MCE increased with an increase in the magnetic field induction at all temperatures studied. Dependences of MCE on temperature had weak maxima at 298 K at all magnetic induction values. The disturbance of the intermolecular hydrogen-bonding of hydroxyl groups is one of probable reasons for such dependences type. MCE values increased under the palmitoyl substituent incorporation into one of the phenol groups at all temperatures. The heat capacity of the studied complexes rose slightly with temperature growth. Dependences of the heat capacity on temperature showed that the magnetic component of the heat capacity did not appear due to the presence of the manganese atom acting as a paramagnetic center in complexes 1, 2, and 3. The relation between the complexes structure and their magnetothermal properties was analyzed. It was justified that the changes of magnetothermal properties were caused by electronic substitution effects and, to an even greater degree, by the conditions of intermolecular hydrogen bonds formation in the paramagnetic materials. - Highlights: • The magnetocaloric effect and heat capacity of 3 manganese porphyrin were determined. • Temperature dependences of magnetocaloric effect has been studied. • The relation between the

Cervical vertebral maturation and dental age in coeliac patients.

Science.gov (United States)

Costacurta, M; Condò, R; Sicuro, L; Perugia, C; Docimo, R

2011-07-01

The aim of the study was to evaluate the cervical vertebral maturation and dental age, in group of patients with coelic disease (CD), in comparison with a control group of healthy subjects. At the Paediatric Dentistry Unit of PTV Hospital, "Tor Vergata" University of Rome, 120 female patients, age range 12.0-12.9 years were recruited. Among them, 60 subjects (Group 1) were affected by CD, while the control group (Group 2) consisted of 60 healthy subjects, sex and age-matched. The Group 1 was subdivided, according to the period of CD diagnosis, in Group A (early diagnosis) and Group B (late diagnosis). The skeletal age was determined by assessing the cervical vertebral maturation, while the dental age has been determined using the method codified by Demirjiyan. STATISTICS.: The analyses were performed using the SPSS software (version 16; SPSS Inc., Chicago IL, USA). In all the assessments a significant level of alpha = 0.05 was considered. There are no statistically significant differences between Group 1 and Group 2 as for chronological age (p=0.122). Instead, from the assessment of skeletal-dental age, there are statistically significant differences between Group 1 - Group 2 (pcervical vertebral maturity can be assessed with a low cost, non invasive, easy to perform exam carried out through the routine radiographic examinations such as orthopanoramic and lateral teleradiography.

Sorption of V and VI group metalloids (As, Sb, Te on modified peat sorbents

Directory of Open Access Journals (Sweden)

Ansone-Bertina Linda

2016-01-01

Full Text Available The present work investigates arsenic, antimony and tellurium sorption using iron modified peat. The results were obtained using batch tests and the sorption was studied as a function of initial metalloid concentration, pH and sorption time, as well as the presence of competing substances. The obtained results indicate that modification of peat with Fe compounds significantly enhances the sorption capacity of the sorbents used for sorption of arsenic, antimony and tellurium. The optimal pH interval for the sorption of Sb(III is 6.5–9 and for As(V and Sb(V – 3–6, while As(III and tellurium sorption using Fe-modified peat is favourable in a wider interval of 3–9. The presence of competing ions as well as HA affect sorption of metalloids on Fe-modified peat. A minor impact on the reduction of metalloid sorption was detected in the presence of nitrate, sulphate, carbonate and tartrate ions, while in the presence of phosphate and HA the sorption ability of metalloids can be considerably reduced. The obtained results of kinetic experiments indicate that sorption of metalloids on Fe-modified peat mainly occurs relying on mechanisms of physical sorption processes.

Maturation of Shark Single-Domain (IgNAR) Antibodies: Evidence for Induced-Fit Binding

Energy Technology Data Exchange (ETDEWEB)

Stanfield, R.L.; Dooley, H.; Verdino, P.; Flajnik, M.F.; Wilson, I.A.; /Scripps Res. Inst. /Maryland U.

2007-07-13

Sharks express an unusual heavy-chain isotype called IgNAR, whose variable regions bind antigen as independent soluble domains. To further probe affinity maturation of the IgNAR response, we structurally characterized the germline and somatically matured versions of a type II variable (V) region, both in the presence and absence of its antigen, hen egg-white lysozyme. Despite a disulfide bond linking complementarity determining regions (CDRs) 1 and 3, both germline and somatically matured V regions displayed significant structural changes in these CDRs upon complex formation with antigen. Somatic mutations in the IgNAR V region serve to increase the number of contacts with antigen, as reflected by a tenfold increase in affinity, and one of these mutations appears to stabilize the CDR3 region. In addition, a residue in the HV4 loop plays an important role in antibody-antigen interaction, consistent with the high rate of somatic mutations in this non-CDR loop.

Effects of posttreatment skeletal maturity measured with the cervical vertebral maturation method on incisor alignment relapse.

Science.gov (United States)

Fudalej, Piotr; Rothe, Laura E; Bollen, Anne-Marie

2008-08-01

Our aim was to test the hypothesis that relapse of incisor alignment is associated with skeletal maturity at the end of treatment, as assessed with the cervical vertebral maturation (CVM) method. This was a case-control study with information from the postretention database at the University of Washington. Mandibular incisor irregularity (II) at least 10 years out of retention (T3) was used to define the subjects (II >6 mm, relapse group) and the controls (II 0.05). Pretreatment II and postretention time were found to be correlated with long-term incisor stability (P = 0.007 and 0.034, respectively). Sex was not related to relapse (P = 0.33). Maturity of craniofacial structures at the end of treatment evaluated with the CVM method is not associated with long-term stability of incisor alignment.

Wide bandgap collector III-V double heterojunction bipolar transistors

International Nuclear Information System (INIS)

Flitcroft, R.M.

2000-10-01

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

Science.gov (United States)

Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

2018-04-01

Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

Electrochemical behavior of ruthenium (III), rhodium (III) and palladium (II) in 1-butyl-3-methylimidazolium chloride ionic liquid

Energy Technology Data Exchange (ETDEWEB)

Jayakumar, M.; Venkatesan, K.A. [Fuel Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Srinivasan, T.G. [Fuel Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)], E-mail: tgs@igcar.gov.in; Vasudeva Rao, P.R. [Fuel Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

2009-11-01

Electrochemical behavior of ruthenium (III), rhodium (III) and palladium (II) in 1-butyl-3-methylimidazolium chloride (bmimCl) and their ternary and binary solutions in bmimCl was studied at various working electrodes at 373 K by cyclic voltammetry and chronoamperometry. Ruthenium (III) chloride forms a stable solution with bmimCl and the cyclic voltammogram of ruthenium (III) in bmimCl recorded at glassy carbon electrode consisted of several redox waves due to the complex nature of ruthenium to exist in several oxidation states. Electrolysis of ruthenium (III) chloride in bmimCl at the cathodic limit of bmimCl (-1.8 V (vs. Pd)) did not result in ruthenium metal deposition. However, it was deposited from bmimPF{sub 6} and bmimNTf{sub 2} room temperature ionic liquids at -0.8 V (vs. Pd). The electrochemical behavior of ruthenium (III) in bmimCl in the presence of palladium (II) and rhodium (III) was studied by cyclic voltammetry. The presence of palladium (II) in bmimCl favors underpotential deposition of ruthenium metal. The nuclear loop at -0.5 V (vs. Pd) was observed in all solutions when palladium (II) co-existed with other two metal ions. Nucleation and growth of the metal on glassy carbon working electrode was investigated by chronoamperometry. The growth and decay of chronocurrents has been found to follow the instantaneous nucleation model with three-dimensional growth of nuclei.

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Directory of Open Access Journals (Sweden)

Katsuaki Tanabe

2009-07-01

Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

Thermodecomposition of lanthanides (III) and ytrium (III) glucoheptonates

International Nuclear Information System (INIS)

Giolito, J.

1987-01-01

The lanthanides (III) and yttrium (III) glucoheptonates as well the D-glucoheptono 1-4 lactone were studied using common analytical methods, elemental microanalysis of carbon and hydrogen, thermogravimetry and differential scanning calorimetry. These compounds were prepared from the reaction between the lanthanides (III) and yttrium (III) hydroxides and glucoheptonic acid aqueous solution obtained by means of the delta lactone hydrolysis of this acid. After stoichiometric reaction the compounds were precipitated by the addition of absolute ethanol, washed with the same solvent and dried in desiccator. Thermogravimetric the (TG) curves of the lanthanides glucoheptonates of the ceric group present thermal profiles with enough differences permitting an easy caracterization of each compound and the yttrium (III) glucoheptonate TG curve showed a great similarity with the erbium (III) compound TG curve. The differential scanning calometry (DSC) curves showed endothermic and exothermic peaks by their shape, height and position (temperature) permit an easy and rapid identification of each compound specially if DSC and TG curves were examined simultaneously. (author) [pt

[Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament at stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V].

Science.gov (United States)

Hu, Wen-yue; Yu, Chong; Huang, Zhong-ming; Han, Lei

2015-06-01

To explore clinical efficacy of double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I in treating acromioclavicular dislocation with Rockwood type III - V . From January 2010 to September 2013, 56 patients with Rockwood type III - V acromioclavicular dislocation were treated by operation, including 20 males and 36 femlaes, aged from 32 to 52 years old with an average of 38.5 years old. Twenty-five patients were on the left side and 31 cases on the right side. The time from injury to operation was from 3 to 14 days, averaged 7 days. All patients were diagnosed as acromioclavicular dislocation with Rockwood type III - V, and double Endobutto were used to reconstituting coracoclavicular ligament, line metal anchors were applied for repairing acromioclavicular ligament. Postoperative complications were observed, Karlsson and Constant-Murley evaluation standard were used to evaluate clinical effects. All patients were followed up from 8 to 24 months with average of 11 months. According to Karlsson evaluation standard at 6 months after operation,42 cases were grade A, 13 were grade B and 1 was grade C. Constant-Murley score were improved from (42.80±5.43) before operation to (91.75±4.27) at 6 months after operation. All items at 6 months after operation were better than that of preoperative items. Forty-eight patients got excellent results, 7 were moderate and only 1 with bad result. No shoulder joint adhesion, screw loosening or breakage were occurred during following up. Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V could obtain early staisfied clinical effects, and benefit for early recovery of shoulder joint function.

Binary and ternary chelates of scandium (III), Yttrium (III) and lanthanum (III) with ethyleneglycol-bis(. beta. -aminoethylether)-tetraacetic acid as primary and substituted salicylic acids as secondary ligands

Energy Technology Data Exchange (ETDEWEB)

Pandey, A K; Chandra, M; Agarwala, B V; Dey, A K [Allahabad Univ. (India). Chemical Labs.

1980-01-01

Formation constants of binary and ternary complexes of the systems of the type: M-L and M-egta-L (M = scandium(III), yttrium(III) and lanthanum(III), egta = ethylene glycol-bis(..beta..-aminoethylether)-tetra acetic acid, L = o-cresotic acid (o-ca), m-cresotic acid (m-ca), 5-chlorosalicyclic acid(csa), and 3,5-dibromosalicylic acid (dbsa)) have been determined pH-metrically at 25deg and ..mu.. = 0.1M (KNO/sub 3/) in 50% (v/v) aqueous-ethanol medium. The order of stabilities of ternary complexes has been compared with those of corresponding binary complexes, and results discussed on the basis of coulombic interactions.

Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

Science.gov (United States)

Vilenchik, Yaakov Yasha

Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

Science.gov (United States)

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

Moral maturity and delinquency after prenatal alcohol exposure.

Science.gov (United States)

Schonfeld, Amy M; Mattson, Sarah N; Riley, Edward P

2005-07-01

Prenatal exposure to alcohol is associated with cognitive, behavioral and social deficits, including delinquency. Although delinquent populations and those with intellectual and behavioral deficits exhibit impaired moral judgment and reasoning, this area remains unexplored in alcohol-exposed individuals. Moral maturity and delinquency were evaluated in 27 participants with prenatal alcohol exposure (ALC group) and 29 nonexposed controls (CON group) matched on age (range: 10-18), gender, handedness, socioeconomic status and ethnicity. Moral maturity was evaluated using the Sociomoral Reflection Measure-Short Form, and delinquency was evaluated with the Conduct Disorder (CD) Questionnaire. Additional measures included social desirability and inhibition. The ALC group performed at a lower level of moral maturity than the CON group. Whereas Verbal IQ primarily predicted this difference, a deficit on the moral value judgment having to do with relationships with others was specific to prenatal alcohol exposure. Furthermore, delinquency was higher in the ALC group, and specific sociomoral values were predictive of delinquent behavior. Finally, half of the children and adolescents with a history of prenatal alcohol exposure but without fetal alcohol syndrome had probable CD. The results of this study indicate that interventions aimed at reducing delinquency in those with prenatal alcohol exposure are necessary, and targeting moral judgment for this purpose may be beneficial.

Modulation of short-term plasticity in the corticothalamic circuit by group III metabotropic glutamate receptors.

Science.gov (United States)

Kyuyoung, Christine L; Huguenard, John R

2014-01-08

Recurrent connections in the corticothalamic circuit underlie oscillatory behavior in this network and range from normal sleep rhythms to the abnormal spike-wave discharges seen in absence epilepsy. The propensity of thalamic neurons to fire postinhibitory rebound bursts mediated by low-threshold calcium spikes renders the circuit vulnerable to both increased excitation and increased inhibition, such as excessive excitatory cortical drive to thalamic reticular (RT) neurons or heightened inhibition of thalamocortical relay (TC) neurons by RT. In this context, a protective role may be played by group III metabotropic receptors (mGluRs), which are uniquely located in the presynaptic active zone and typically act as autoreceptors or heteroceptors to depress synaptic release. Here, we report that these receptors regulate short-term plasticity at two loci in the corticothalamic circuit in rats: glutamatergic cortical synapses onto RT neurons and GABAergic synapses onto TC neurons in somatosensory ventrobasal thalamus. The net effect of group III mGluR activation at these synapses is to suppress thalamic oscillations as assayed in vitro. These findings suggest a functional role of these receptors to modulate corticothalamic transmission and protect against prolonged activity in the network.

Effects of sorbitol on porcine oocyte maturation and embryo development in vitro.

Science.gov (United States)

Lin, Tao; Zhang, Jin Yu; Diao, Yun Fei; Kang, Jung Won; Jin, Dong-Il

2015-04-01

In the present study, a porcine system was supplemented with sorbitol during in vitro maturation (IVM) or in vitro culture (IVC), and the effects of sorbitol on oocyte maturation and embryonic development following parthenogenetic activation were assessed. Porcine immature oocytes were treated with different concentrations of sorbitol during IVM, and the resultant metaphase II stage oocytes were activated and cultured in porcine zygote medium-3 (PZM-3) for 7 days. No significant difference was observed in cumulus expansion and the nuclear maturation between the control and sorbitol-treated groups, with the exception of the 100 mM group, which showed significantly decreased nuclear maturation and cumulus expansion. There was no significant difference in the intracellular reactive oxygen species (ROS) levels between oocytes matured with 10 or 20 mM sorbitol and control groups, but 50 and 100 mM groups had significantly higher ROS levels than other groups. The 20 mM group showed significant increases in intracellular glutathione and subsequent blastocyst formation rates following parthenogenetic activation compared with the other groups. During IVC, supplementation with sorbitol significantly reduced blastocyst formation and increased the apoptotic index compared with the control. The apoptotic index of blastocysts from the sorbitol-treated group for entire culture period was significantly higher than those of the partially sorbitol-exposed groups. Based on these findings, it can be concluded that the addition of a low concentration of sorbitol (20 mM) during IVM of porcine oocytes benefits subsequent blastocyst development and improves embryo quality, whereas sorbitol supplement during IVC has a negative effect on blastocyst formation.

Optimized FFTF Acceptance Test Program covering Phases III, IV, and V

International Nuclear Information System (INIS)

Wykoff, W.R.; Jones, D.H.

1977-03-01

A detailed review of Phases III, IV, and V of the FFTF Acceptance Test Program has been completed. The purpose of this review was to formulate that test sequence which not only meets requirements for safe, reliable and useful operation of the plant, but also results in the earliest prudent demonstration of full-power performance. A test sequence based on the underlying assumption that sodium flows into the secondary sodium storage tank (T-44) no later than August 31, 1978, is described in detail. A time-scale which allows extra time to put systems and equipment into operation the first time, debugging, and learning how to operate most effectively has been superimposed on the test sequence. Time is not included for major equipment malfunctions. This test plan provides the basis for coordinating the many and varied activities and interfaces necessary for successful and timely execution of the FFTF Acceptance Test Program. In this report, the need dates have been identified for presently scheduled test articles and standard core components

Affinity Maturation of an Anti-V Antigen IgG Expressed In Situ Via Adenovirus Gene Delivery Confers Enhanced Protection Against Yersinia pestis Challenge

Science.gov (United States)

Van Blarcom, Thomas J.; Sofer-Podesta, Carolina; Ang, John; Boyer, Julie L.; Crystal, Ronald G.; Georgiou, George

2013-01-01

Genetic transfer of neutralizing antibodies has been shown to confer strong and persistent protection against bacterial and viral infectious agents. While it is well established that for many exogenous neutralizing antibodies increased antigen affinity correlates with protection, the effect of antigen affinity on antibodies produced in situ following adenoviral gene transfer has not been examined. The mouse IgG2b monoclonal antibody 2C12.4 recognizes the Yersinia pestis Type III secretion apparatus protein LcrV (V antigen) and confers protection in mice when administered as an IgG intraperitoneally or, following genetic immunization with engineered, replication-defective serotype 5 human adenovirus (Ad) 1. 2C12.4 was expressed as a scFv fragment in E. coli and was shown to display a KD=3.5 nM by surface plasmon resonance (SPR) analysis. The 2C12.4 scFv was subjected to random mutagenesis and variants with increased affinity were isolated by flow cytometry using the Anchored Periplasmic Expression (APEx) bacterial display system. After a single round of mutagenesis, variants displaying up to 35-fold lower KD values (H8, KD=100 pM) were isolated. The variable domains of the H8 scFv were used to replace those of the parental 2C12.4 IgG encoded in the Ad vector, AdαV giving rise to AdαV.H8. The two adenoviral vectors resulted in similar titers of anti-V antigen antibodies 3 days post-immunization with 109, 1010 or 1011 particle units. Following intranasal challenge with 363 LD50Y. pestis CO92, 54% of the mice immunized with 1010 pu of AdαV.H8 survived at the 14 day end point compared to only 15% survivors for the group immunized with AdαV expressing the lower affinity 2C12.4 (Pgenetic transfer may confer increased protection not only for Y. pestis challenge but possibly for other pathogens. PMID:20393511

Social Maturation: Work Group Proceedings.

Science.gov (United States)

Resnick, Michael D.; And Others

1985-01-01

Each of the seven factors that affect adolescent social development is presented together with a description of potentially important research, service, and policy initiatives within each topic area. The factors are self-esteem, peer group, parenting, family, services, enforced dependency, and positive sexual socialization. (CT)

Doping of III-nitride materials

OpenAIRE

Pampili, Pietro; Parbrook, Peter J.

2016-01-01

In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

Synthesis of novel fluorescent probe Tb(III)-7-carboxymethoxy-4-methylcoumarin complex for sensing of DNA

International Nuclear Information System (INIS)

Hussein, Belal H.M.; Azab, Hassan A.; Fathalla, Walid; Ali, Sherin A.M.

2013-01-01

New fluorescent probe Tb(III) (7-carboxymethoxy-4-methylcoumarin)2(SCN) (C2H5OH)(H2O) was synthesized and characterized by spectroscopy and thermal analysis. The absorption and fluorescence spectra of 7-carboxymethoxy-4-methylcoumarin (CMMC) and Tb(III)–CMMC complex have been measured in different solvents. The interactions of Tb(III)–CMMC complex with calf thymus nucleic acid (CT-DNA) have been investigated using steady state fluorescence measurements. The changes in the fluorescence intensity have been used for the quantitative determination of DNA with LOD of 3.45 ng in methanol–water (9:1, v/v). The association constants of DNA with Tb(III)–CMMC complex was found to be 2.62×1010 M −1 . - Highlights: ► New fluorescent probe Terbium (III)-7-carboxy methoxy-4-methylcoumarin complex has been synthesized and characterized. ► FTIR spectrum of Tb(III)-complex shows a characteristic band for thiocyanate group. ► DNA interaction with Terbium (III)-7-carboxy methoxy-4-methylcoumarin has been studied by fluorescence techniques. ► The change in the fluorescence intensity has been used for the quantitative determination of DNA. ► The result was better than most of the well-known methods including the ethidium bromide method.

[OVARIAN RESERVE AND EFFECTIVENESS OF IVF IN WOMEN OF VARIOUS AGE GROUPS].

Science.gov (United States)

Sayadyan, A; Totoyan, E

2017-01-01

The purpose of this study is a comparative assessment of ovarian reserve parameters and the effect of these indices on the features of follicle and oogenesis in women of different age groups. A retrospective analysis of IVF results was conducted in 101 patients aged 21 to 49 years. All patients were divided into 4 groups according to age: I group up to 30 y.o. - 45 women, II group - 31-35 y.o - 14 women, III group - 36-40 y.o. - 26 women, IV Group - 41 or more - 16 women. A low ovarian reserve was found in the majority (84,6%) of women in group III and in all women in group IV. It was found that the lowest total dose of rFSH / hMG was used in women aged 21-30 years and 31-35 years, and in women in the age range of 36-40 years, the consumption of drugs was significantly higher and tended to further increase in the age group 41 аnd more years. A large consumption of rFSH/hMG is necessary to overcome the growing FSH level in the process of aging of the reproductive system and the reduced AMH level. However, at the same time, compared age groups had significant differences in the number of oocytes and embryos obtained. With age, a significant reduction in the number of mature oocytes and embryos obtained after follicle puncture and fertilization has been identified. The most promising in terms of pregnancy were the I and II groups. With age, the frequency of pregnancy decreased. The number of pregnancies was statistically lower in the III age group compared to groups I and II. In the IV group, no cases of pregnancy were recorded. Thus, it can be concluded that age is a statistically significant factor affecting the success of infertility treatment by IVF.

Photophysical studies of highly luminescent europium(III) and terbium(III) complexes functionalized with amino and mercapto groups

Energy Technology Data Exchange (ETDEWEB)

Souza, E.R.; Monteiro, J.H.S.K.; Mazali, I.O.; Sigoli, F.A., E-mail: fsigoli@iqm.unicam.br

2016-02-15

This work proposes the replacement of coordinated-water molecules from the precursor complexes [Ln(aba){sub 3}(H{sub 2}O)] and [Ln(tta){sub 3}(H{sub 2}O){sub 2}], (Ln=Eu{sup 3+}, Gd{sup 3+} or Tb{sup 3+}, aba{sup −}=aminobenzoate, tta{sup −}=thenoyltrifluoroacetonate) by the ligands mercaptobenzoate (mba{sup −}), mercaptopropionate (mpa{sup −}), phenanthroline (phen), dimethylformamide (dmf) and acetoacetanilide (aaa{sup −}), leading to anionic or neutral amino (–NH{sub 2}) or mercapto (–SH) functionalized-lantanides (III) complexes with reasonable emission quantum yields for potential application on fluorescence microscopy of biological moieties. The complexes photophysical properties were studied using luminescence spectroscopy and theoretical models to determine the transfer and back energy transfer rates and quantum yields, that were compared with experimental ones. The anionic complexes [Eu(tta){sub 3}(L)]{sup −} showed high quantum yield values and their sensitization efficiency are in the range of 39–81%. The overlay of the ground state geometries, obtained from the Sparkle/PM3 model, of the complexes [Eu(tta){sub 3}(aba)]{sup −}, [Eu(tta){sub 3}(mba)]{sup −} and [Eu(tta){sub 3}(mpa)]{sup −}, suggest similar coordination polyhedrons occupied by the europium(III). The highest transfer rates T→{sup 5}D{sub 1,0} were obtained for the anionic complexes [Eu(tta){sub 3}(L)]{sup −} which might be a result of the low triplet level energies and R{sub L} values. - Highlights: • Lanthanides functionalized-complexes. • Free mercapto and amino groups. • Covalence degree of Eu-ligands. • Energy transfer rates. • Intrinsic and absolute quantum yields and sensitization.

Ossification score is a better indicator of maturity related changes in eating quality than animal age.

Science.gov (United States)

Bonny, S P F; Pethick, D W; Legrand, I; Wierzbicki, J; Allen, P; Farmer, L J; Polkinghorne, R J; Hocquette, J-F; Gardner, G E

2016-04-01

Ossification score and animal age are both used as proxies for maturity-related collagen crosslinking and consequently decreases in beef tenderness. Ossification score is strongly influenced by the hormonal status of the animal and may therefore better reflect physiological maturity and consequently eating quality. As part of a broader cross-European study, local consumers scored 18 different muscle types cooked in three ways from 482 carcasses with ages ranging from 590 to 6135 days and ossification scores ranging from 110 to 590. The data were studied across three different maturity ranges; the complete range of maturities, a lesser range and a more mature range. The lesser maturity group consisted of carcasses having either an ossification score of 200 or less or an age of 987 days or less with the remainder in the greater maturity group. The three different maturity ranges were analysed separately with a linear mixed effects model. Across all the data, and for the greater maturity group, animal age had a greater magnitude of effect on eating quality than ossification score. This is likely due to a loss of sensitivity in mature carcasses where ossification approached and even reached the maximum value. In contrast, age had no relationship with eating quality for the lesser maturity group, leaving ossification score as the more appropriate measure. Therefore ossification score is more appropriate for most commercial beef carcasses, however it is inadequate for carcasses with greater maturity such as cull cows. Both measures may therefore be required in models to predict eating quality over populations with a wide range in maturity.

Application of the BISON Fuel Performance Code of the FUMEX-III Coordinated Research Project

International Nuclear Information System (INIS)

Williamson, R.L.; Novascone, S.R.

2013-01-01

Since 1981, the International Atomic Energy Agency (IAEA) has sponsored a series of Coordinated Research Projects (CRP) in the area of nuclear fuel modeling. These projects have typically lasted 3-5 years and have had broad international participation. The objectives of the projects have been to assess the maturity and predictive capability of fuel performance codes, support interaction and information exchange between countries with code development and application needs, build a database of well- defined experiments suitable for code validation, transfer a mature fuel modeling code to developing countries, and provide guidelines for code quality assurance and code application to fuel licensing. The fourth and latest of these projects, known as FUMEX-III1 (FUel Modeling at EXtended Burnup- III), began in 2008 and ended in December of 2011. FUMEX-III was the first of this series of fuel modeling CRP's in which the INL participated. Participants met at the beginning of the project to discuss and select a set of experiments ('priority cases') for consideration during the project. These priority cases were of broad interest to the participants and included reasonably well-documented and reliable data. A meeting was held midway through the project for participants to present and discuss progress on modeling the priority cases. A final meeting was held at close of the project to present and discuss final results and provide input for a final report. Also in 2008, the INL initiated development of a new multidimensional (2D and 3D) multiphysics nuclear fuel performance code called BISON, with code development progressing steadily during the three-year FUMEX-III project. Interactions with international fuel modeling researchers via FUMEX-III played a significant role in the BISON evolution, particularly influencing the selection of material and behavioral models which are now included in the code. The FUMEX-III cases are generally integral fuel rod experiments occurring

Electrochemical Sensing of Casein Based on the Interaction between Its Phosphate Groups and a Ruthenium(III) Complex.

Science.gov (United States)

Inaba, Iku; Kuramitz, Hideki; Sugawara, Kazuharu

2016-01-01

A reaction to casein, along with β-lactoglobulin, is a main cause of milk allergies, and also is a useful indicator of protein in allergic analyses. In the present study, a simple casein sensor was developed based on the interaction between a phosphate group of casein and electroactive [Ru(NH3)6](3+). We evaluated the voltammetric behavior of a casein-[Ru(NH3)6](3+) complex using a glassy carbon electrode. When the ruthenium(III) complex was combined with the phosphate groups of casein, the structure of the casein was changed. Since the hydrophobicity of casein was increased due to the binding, the casein was adsorbed onto the electrode. Furthermore, we modified an electrode with a ruthenium(III) ions/collagen film. When the sensor was applied to the detection of the casein contained in milk, the values coincided with those indicated by the manufacturer. Accordingly, this electrode could be a powerful sensor for the determination of casein in several foods.

Search for Evidence of the Type-III Seesaw Mechanism in Multilepton Final States in Proton-Proton Collisions at sqrt[s]=13  TeV.

Science.gov (United States)

Sirunyan, A M; Tumasyan, A; Adam, W; Ambrogi, F; Asilar, E; Bergauer, T; Brandstetter, J; Brondolin, E; Dragicevic, M; Erö, J; Flechl, M; Friedl, M; Frühwirth, R; Ghete, V M; Grossmann, J; Hrubec, J; Jeitler, M; König, A; Krammer, N; Krätschmer, I; Liko, D; Madlener, T; Mikulec, I; Pree, E; Rabady, D; Rad, N; Rohringer, H; Schieck, J; Schöfbeck, R; Spanring, M; Spitzbart, D; Waltenberger, W; Wittmann, J; Wulz, C-E; Zarucki, M; Chekhovsky, V; Mossolov, V; Suarez Gonzalez, J; De Wolf, E A; Di Croce, D; Janssen, X; Lauwers, J; Van Haevermaet, H; Van Mechelen, P; Van Remortel, N; Abu Zeid, S; Blekman, F; D'Hondt, J; De Bruyn, I; De Clercq, J; Deroover, K; Flouris, G; Lontkovskyi, D; Lowette, S; Moortgat, S; Moreels, L; Python, Q; Skovpen, K; Tavernier, S; Van Doninck, W; Van Mulders, P; Van Parijs, I; Brun, H; Clerbaux, B; De Lentdecker, G; Delannoy, H; Fasanella, G; Favart, L; Goldouzian, R; Grebenyuk, A; Karapostoli, G; Lenzi, T; Luetic, J; Maerschalk, T; Marinov, A; Randle-Conde, A; Seva, T; Vander Velde, C; Vanlaer, P; Vannerom, D; Yonamine, R; Zenoni, F; Zhang, F; Cimmino, A; Cornelis, T; Dobur, D; Fagot, A; Gul, M; Khvastunov, I; Poyraz, D; Roskas, C; Salva, S; Tytgat, M; Verbeke, W; Zaganidis, N; Bakhshiansohi, H; Bondu, O; Brochet, S; Bruno, G; Caudron, A; De Visscher, S; Delaere, C; Delcourt, M; Francois, B; Giammanco, A; Jafari, A; Komm, M; Krintiras, G; Lemaitre, V; Magitteri, A; Mertens, A; Musich, M; Piotrzkowski, K; Quertenmont, L; Vidal Marono, M; Wertz, S; Beliy, N; Aldá Júnior, W L; Alves, F L; Alves, G A; Brito, L; Correa Martins Junior, M; Hensel, C; Moraes, A; Pol, M E; Rebello Teles, P; Belchior Batista Das Chagas, E; Carvalho, W; Chinellato, J; Custódio, A; Da Costa, E M; Da Silveira, G G; De Jesus Damiao, D; Fonseca De Souza, S; Huertas Guativa, L M; Malbouisson, H; Melo De Almeida, M; Mora Herrera, C; Mundim, L; Nogima, H; Santoro, A; Sznajder, A; Tonelli Manganote, E J; Torres Da Silva De Araujo, F; Vilela Pereira, A; Ahuja, S; Bernardes, C A; Tomei, T R Fernandez Perez; Gregores, E M; Mercadante, P G; Novaes, S F; Padula, Sandra S; Romero Abad, D; Ruiz Vargas, J C; Aleksandrov, A; Hadjiiska, R; Iaydjiev, P; Misheva, M; Rodozov, M; Shopova, M; Stoykova, S; Sultanov, G; Dimitrov, A; Glushkov, I; Litov, L; Pavlov, B; Petkov, P; Fang, W; Gao, X; Ahmad, M; Bian, J G; Chen, G M; Chen, H S; Chen, M; Chen, Y; Jiang, C H; Leggat, D; Liao, H; Liu, Z; Romeo, F; Shaheen, S M; Spiezia, A; Tao, J; Wang, C; Wang, Z; Yazgan, E; Zhang, H; Zhao, J; Ban, Y; Chen, G; Li, Q; Liu, S; Mao, Y; Qian, S J; Wang, D; Xu, Z; Avila, C; Cabrera, A; Chaparro Sierra, L F; Florez, C; González Hernández, C F; Ruiz Alvarez, J D; Courbon, B; Godinovic, N; Lelas, D; Puljak, I; Ribeiro Cipriano, P M; Sculac, T; Antunovic, Z; Kovac, M; Brigljevic, V; Ferencek, D; Kadija, K; Mesic, B; Starodumov, A; Susa, T; Ather, M W; Attikis, A; Mavromanolakis, G; Mousa, J; Nicolaou, C; Ptochos, F; Razis, P A; Rykaczewski, H; Finger, M; Finger, M; Carrera Jarrin, E; El-Khateeb, E; Elgammal, S; Ellithi Kamel, A; Dewanjee, R K; Kadastik, M; Perrini, L; Raidal, M; Tiko, A; Veelken, C; Eerola, P; Pekkanen, J; Voutilainen, M; Härkönen, J; Järvinen, T; Karimäki, V; Kinnunen, R; Lampén, T; Lassila-Perini, K; Lehti, S; Lindén, T; Luukka, P; Tuominen, E; Tuominiemi, J; Tuovinen, E; Talvitie, J; Tuuva, T; Besancon, M; Couderc, F; Dejardin, M; Denegri, D; Faure, J L; Ferri, F; Ganjour, S; Ghosh, S; Givernaud, A; Gras, P; Hamel de Monchenault, G; Jarry, P; Kucher, I; Locci, E; Machet, M; Malcles, J; Negro, G; Rander, J; Rosowsky, A; Sahin, M Ö; Titov, M; Abdulsalam, A; Antropov, I; Baffioni, S; Beaudette, F; Busson, P; Cadamuro, L; Charlot, C; Granier de Cassagnac, R; Jo, M; Lisniak, S; Lobanov, A; Martin Blanco, J; Nguyen, M; Ochando, C; Ortona, G; Paganini, P; Pigard, P; Regnard, S; Salerno, R; Sauvan, J B; Sirois, Y; Stahl Leiton, A G; Strebler, T; Yilmaz, Y; Zabi, A; Zghiche, A; Agram, J-L; Andrea, J; Bloch, D; Brom, J-M; Buttignol, M; Chabert, E C; Chanon, N; Collard, C; Conte, E; Coubez, X; Fontaine, J-C; Gelé, D; Goerlach, U; Jansová, M; Le Bihan, A-C; Tonon, N; Van Hove, P; Gadrat, S; Beauceron, S; Bernet, C; Boudoul, G; Chierici, R; Contardo, D; Depasse, P; El Mamouni, H; Fay, J; Finco, L; Gascon, S; Gouzevitch, M; Grenier, G; Ille, B; Lagarde, F; Laktineh, I B; Lethuillier, M; Mirabito, L; Pequegnot, A L; Perries, S; Popov, A; Sordini, V; Vander Donckt, M; Viret, S; Toriashvili, T; Lomidze, D; Autermann, C; Beranek, S; Feld, L; Kiesel, M K; Klein, K; Lipinski, M; Preuten, M; Schomakers, C; Schulz, J; Verlage, T; Albert, A; Dietz-Laursonn, E; Duchardt, D; Endres, M; Erdmann, M; Erdweg, S; Esch, T; Fischer, R; Güth, A; Hamer, M; Hebbeker, T; Heidemann, C; Hoepfner, K; Knutzen, S; Merschmeyer, M; Meyer, A; Millet, P; Mukherjee, S; Olschewski, M; Padeken, K; Pook, T; Radziej, M; Reithler, H; Rieger, M; Scheuch, F; Teyssier, D; Thüer, S; Flügge, G; Kargoll, B; Kress, T; Künsken, A; Lingemann, J; Müller, T; Nehrkorn, A; Nowack, A; Pistone, C; Pooth, O; Stahl, A; Aldaya Martin, M; Arndt, T; Asawatangtrakuldee, C; Beernaert, K; Behnke, O; Behrens, U; Bermúdez Martínez, A; Bin Anuar, A A; Borras, K; Botta, V; Campbell, A; Connor, P; Contreras-Campana, C; Costanza, F; Diez Pardos, C; Eckerlin, G; Eckstein, D; Eichhorn, T; Eren, E; Gallo, E; Garay Garcia, J; Geiser, A; Gizhko, A; Grados Luyando, J M; Grohsjean, A; Gunnellini, P; Harb, A; Hauk, J; Hempel, M; Jung, H; Kalogeropoulos, A; Kasemann, M; Keaveney, J; Kleinwort, C; Korol, I; Krücker, D; Lange, W; Lelek, A; Lenz, T; Leonard, J; Lipka, K; Lohmann, W; Mankel, R; Melzer-Pellmann, I-A; Meyer, A B; Mittag, G; Mnich, J; Mussgiller, A; Ntomari, E; Pitzl, D; Raspereza, A; Roland, B; Savitskyi, M; Saxena, P; Shevchenko, R; Spannagel, S; Stefaniuk, N; Van Onsem, G P; Walsh, R; Wen, Y; Wichmann, K; Wissing, C; Zenaiev, O; Bein, S; Blobel, V; Centis Vignali, M; Dreyer, T; Garutti, E; Gonzalez, D; Haller, J; Hinzmann, A; Hoffmann, M; Karavdina, A; Klanner, R; Kogler, R; Kovalchuk, N; Kurz, S; Lapsien, T; Marchesini, I; Marconi, D; Meyer, M; Niedziela, M; Nowatschin, D; Pantaleo, F; Peiffer, T; Perieanu, A; Scharf, C; Schleper, P; Schmidt, A; Schumann, S; Schwandt, J; Sonneveld, J; Stadie, H; Steinbrück, G; Stober, F M; Stöver, M; Tholen, H; Troendle, D; Usai, E; Vanelderen, L; Vanhoefer, A; Vormwald, B; Akbiyik, M; Barth, C; Baur, S; Butz, E; Caspart, R; Chwalek, T; Colombo, F; De Boer, W; Dierlamm, A; Freund, B; Friese, R; Giffels, M; Gilbert, A; Haitz, D; Hartmann, F; Heindl, S M; Husemann, U; Kassel, F; Kudella, S; Mildner, H; Mozer, M U; Müller, Th; Plagge, M; Quast, G; Rabbertz, K; Schröder, M; Shvetsov, I; Sieber, G; Simonis, H J; Ulrich, R; Wayand, S; Weber, M; Weiler, T; Williamson, S; Wöhrmann, C; Wolf, R; Anagnostou, G; Daskalakis, G; Geralis, T; Giakoumopoulou, V A; Kyriakis, A; Loukas, D; Topsis-Giotis, I; Karathanasis, G; Kesisoglou, S; Panagiotou, A; Saoulidou, N; Evangelou, I; Foudas, C; Kokkas, P; Mallios, S; Manthos, N; Papadopoulos, I; Paradas, E; Strologas, J; Triantis, F A; Csanad, M; Filipovic, N; Pasztor, G; Bencze, G; Hajdu, C; Horvath, D; Hunyadi, Á; Sikler, F; Veszpremi, V; Vesztergombi, G; Zsigmond, A J; Beni, N; Czellar, S; Karancsi, J; Makovec, A; Molnar, J; Szillasi, Z; Bartók, M; Raics, P; Trocsanyi, Z L; Ujvari, B; Choudhury, S; Komaragiri, J R; Bahinipati, S; Bhowmik, S; Mal, P; Mandal, K; Nayak, A; Sahoo, D K; Sahoo, N; Swain, S K; Bansal, S; Beri, S B; Bhatnagar, V; Chawla, R; Dhingra, N; Kalsi, A K; Kaur, A; Kaur, M; Kumar, R; Kumari, P; Mehta, A; Singh, J B; Walia, G; Kumar, Ashok; Shah, Aashaq; Bhardwaj, A; Chauhan, S; Choudhary, B C; Garg, R B; Keshri, S; Kumar, A; Malhotra, S; Naimuddin, M; Ranjan, K; Sharma, R; Sharma, V; Bhardwaj, R; Bhattacharya, R; Bhattacharya, S; Bhawandeep, U; Dey, S; Dutt, S; Dutta, S; Ghosh, S; Majumdar, N; Modak, A; Mondal, K; Mukhopadhyay, S; Nandan, S; Purohit, A; Roy, A; Roy, D; Roy Chowdhury, S; Sarkar, S; Sharan, M; Thakur, S; Behera, P K; Chudasama, R; Dutta, D; Jha, V; Kumar, V; Mohanty, A K; Netrakanti, P K; Pant, L M; Shukla, P; Topkar, A; Aziz, T; Dugad, S; Mahakud, B; Mitra, S; Mohanty, G B; Sur, N; Sutar, B; Banerjee, S; Bhattacharya, S; Chatterjee, S; Das, P; Guchait, M; Jain, Sa; Kumar, S; Maity, M; Majumder, G; Mazumdar, K; Sarkar, T; Wickramage, N; Chauhan, S; Dube, S; Hegde, V; Kapoor, A; Kothekar, K; Pandey, S; Rane, A; Sharma, S; Chenarani, S; Eskandari Tadavani, E; Etesami, S M; Khakzad, M; Mohammadi Najafabadi, M; Naseri, M; Paktinat Mehdiabadi, S; Rezaei Hosseinabadi, F; Safarzadeh, B; Zeinali, M; Felcini, M; Grunewald, M; Abbrescia, M; Calabria, C; Caputo, C; Colaleo, A; Creanza, D; Cristella, L; De Filippis, N; De Palma, M; Errico, F; Fiore, L; Iaselli, G; Lezki, S; Maggi, G; Maggi, M; Miniello, G; My, S; Nuzzo, S; Pompili, A; Pugliese, G; Radogna, R; Ranieri, A; Selvaggi, G; Sharma, A; Silvestris, L; Venditti, R; Verwilligen, P; Abbiendi, G; Battilana, C; Bonacorsi, D; Braibant-Giacomelli, S; Campanini, R; Capiluppi, P; Castro, A; Cavallo, F R; Chhibra, S S; Codispoti, G; Cuffiani, M; Dallavalle, G M; Fabbri, F; Fanfani, A; Fasanella, D; Giacomelli, P; Grandi, C; Guiducci, L; Marcellini, S; Masetti, G; Montanari, A; Navarria, F L; Perrotta, A; Rossi, A M; Rovelli, T; Siroli, G P; Tosi, N; Albergo, S; Costa, S; Di Mattia, A; Giordano, F; Potenza, R; Tricomi, A; Tuve, C; Barbagli, G; Chatterjee, K; Ciulli, V; Civinini, C; D'Alessandro, R; Focardi, E; Lenzi, P; Meschini, M; Paoletti, S; Russo, L; Sguazzoni, G; Strom, D; Viliani, L; Benussi, L; Bianco, S; Fabbri, F; Piccolo, D; Primavera, F; Biggio, C; Calvelli, V; Ferro, F; Robutti, E; Tosi, S; Brianza, L; Brivio, F; Ciriolo, V; Dinardo, M E; Fiorendi, S; Gennai, S; Ghezzi, A; Govoni, P; Malberti, M; Malvezzi, S; Manzoni, R A; Menasce, D; Moroni, L; Paganoni, M; Pauwels, K; Pedrini, D; Pigazzini, S; Ragazzi, S; Tabarelli de Fatis, T; Buontempo, S; Cavallo, N; Di Guida, S; Fabozzi, F; Fienga, F; Iorio, A O M; Khan, W A; Lista, L; Meola, S; Paolucci, P; Sciacca, C; Thyssen, F; Azzi, P; Bacchetta, N; Benato, L; Bisello, D; Boletti, A; Carlin, R; Carvalho Antunes De Oliveira, A; Checchia, P; De Castro Manzano, P; Dorigo, T; Gasparini, F; Gasparini, U; Gozzelino, A; Lacaprara, S; Lujan, P; Margoni, M; Meneguzzo, A T; Pozzobon, N; Ronchese, P; Rossin, R; Simonetto, F; Torassa, E; Zanetti, M; Zotto, P; Zumerle, G; Braghieri, A; Fallavollita, F; Magnani, A; Montagna, P; Ratti, S P; Re, V; Ressegotti, M; Riccardi, C; Salvini, P; Vai, I; Vitulo, P; Alunni Solestizi, L; Biasini, M; Bilei, G M; Cecchi, C; Ciangottini, D; Fanò, L; Lariccia, P; Leonardi, R; Manoni, E; Mantovani, G; Mariani, V; Menichelli, M; Rossi, A; Santocchia, A; Spiga, D; Androsov, K; Azzurri, P; Bagliesi, G; Bernardini, J; Boccali, T; Borrello, L; Castaldi, R; Ciocci, M A; Dell'Orso, R; Fedi, G; Giannini, L; Giassi, A; Grippo, M T; Ligabue, F; Lomtadze, T; Manca, E; Mandorli, G; Martini, L; Messineo, A; Palla, F; Rizzi, A; Savoy-Navarro, A; Spagnolo, P; Tenchini, R; Tonelli, G; Venturi, A; Verdini, P G; Barone, L; Cavallari, F; Cipriani, M; Daci, N; Del Re, D; Diemoz, M; Gelli, S; Longo, E; Margaroli, F; Marzocchi, B; Meridiani, P; Organtini, G; Paramatti, R; Preiato, F; Rahatlou, S; Rovelli, C; Santanastasio, F; Amapane, N; Arcidiacono, R; Argiro, S; Arneodo, M; Bartosik, N; Bellan, R; Biino, C; Cartiglia, N; Cenna, F; Costa, M; Covarelli, R; Degano, A; Demaria, N; Kiani, B; Mariotti, C; Maselli, S; Migliore, E; Monaco, V; Monteil, E; Monteno, M; Obertino, M M; Pacher, L; Pastrone, N; Pelliccioni, M; Pinna Angioni, G L; Ravera, F; Romero, A; Ruspa, M; Sacchi, R; Shchelina, K; Sola, V; Solano, A; Staiano, A; Traczyk, P; Belforte, S; Casarsa, M; Cossutti, F; Della Ricca, G; Zanetti, A; Kim, D H; Kim, G N; Kim, M S; Lee, J; Lee, S; Lee, S W; Moon, C S; Oh, Y D; Sekmen, S; Son, D C; Yang, Y C; Lee, A; Kim, H; Moon, D H; Oh, G; Brochero Cifuentes, J A; Goh, J; Kim, T J; Cho, S; Choi, S; Go, Y; Gyun, D; Ha, S; Hong, B; Jo, Y; Kim, Y; Lee, K; Lee, K S; Lee, S; Lim, J; Park, S K; Roh, Y; Almond, J; Kim, J; Kim, J S; Lee, H; Lee, K; Nam, K; Oh, S B; Radburn-Smith, B C; Seo, S H; Yang, U K; Yoo, H D; Yu, G B; Choi, M; Kim, H; Kim, J H; Lee, J S H; Park, I C; Ryu, G; Choi, Y; Hwang, C; Lee, J; Yu, I; Dudenas, V; Juodagalvis, A; Vaitkus, J; Ahmed, I; Ibrahim, Z A; Md Ali, M A B; Mohamad Idris, F; Wan Abdullah, W A T; Yusli, M N; Zolkapli, Z; Reyes-Almanza, R; Ramirez-Sanchez, G; Duran-Osuna, M C; Castilla-Valdez, H; De La Cruz-Burelo, E; Heredia-De La Cruz, I; Rabadan-Trejo, R I; Lopez-Fernandez, R; Mejia Guisao, J; Sanchez-Hernandez, A; Carrillo Moreno, S; Oropeza Barrera, C; Vazquez Valencia, F; Pedraza, I; Salazar Ibarguen, H A; Uribe Estrada, C; Morelos Pineda, A; Krofcheck, D; Butler, P H; Ahmad, A; Ahmad, M; Hassan, Q; Hoorani, H R; Saddique, A; Shah, M A; Shoaib, M; Waqas, M; Bialkowska, H; Bluj, M; Boimska, B; Frueboes, T; Górski, M; Kazana, M; Nawrocki, K; Romanowska-Rybinska, K; Szleper, M; Zalewski, P; Bunkowski, K; Byszuk, A; Doroba, K; Kalinowski, A; Konecki, M; Krolikowski, J; Misiura, M; Olszewski, M; Pyskir, A; Walczak, M; Bargassa, P; Beirão Da Cruz E Silva, C; Calpas, B; Di Francesco, A; Faccioli, P; Gallinaro, M; Hollar, J; Leonardo, N; Lloret Iglesias, L; Nemallapudi, M V; Seixas, J; Toldaiev, O; Vadruccio, D; Varela, J; Afanasiev, S; Bunin, P; Gavrilenko, M; Golutvin, I; Gorbunov, I; Kamenev, A; Karjavin, V; Lanev, A; Malakhov, A; Matveev, V; Palichik, V; Perelygin, V; Shmatov, S; Shulha, S; Skatchkov, N; Smirnov, V; Voytishin, N; Zarubin, A; Ivanov, Y; Kim, V; Kuznetsova, E; Levchenko, P; Murzin, V; Oreshkin, V; Smirnov, I; Sulimov, V; Uvarov, L; Vavilov, S; Vorobyev, A; Andreev, Yu; Dermenev, A; Gninenko, S; Golubev, N; Karneyeu, A; Kirsanov, M; Krasnikov, N; Pashenkov, A; Tlisov, D; Toropin, A; Epshteyn, V; Gavrilov, V; Lychkovskaya, N; Popov, V; Pozdnyakov, I; Safronov, G; Spiridonov, A; Stepennov, A; Toms, M; Vlasov, E; Zhokin, A; Aushev, T; Bylinkin, A; Chistov, R; Danilov, M; Parygin, P; Philippov, D; Polikarpov, S; Tarkovskii, E; Andreev, V; Azarkin, M; Dremin, I; Kirakosyan, M; Terkulov, A; Baskakov, A; Belyaev, A; Boos, E; Dubinin, M; Dudko, L; Ershov, A; Gribushin, A; Klyukhin, V; Kodolova, O; Lokhtin, I; Miagkov, I; Obraztsov, S; Petrushanko, S; Savrin, V; Snigirev, A; Blinov, V; Skovpen, Y; Shtol, D; Azhgirey, I; Bayshev, I; Bitioukov, S; Elumakhov, D; Kachanov, V; Kalinin, A; Konstantinov, D; Krychkine, V; Petrov, V; Ryutin, R; Sobol, A; Troshin, S; Tyurin, N; Uzunian, A; Volkov, A; Adzic, P; Cirkovic, P; Devetak, D; Dordevic, M; Milosevic, J; Rekovic, V; Alcaraz Maestre, J; Barrio Luna, M; Cerrada, M; Colino, N; De La Cruz, B; Delgado Peris, A; Escalante Del Valle, A; Fernandez Bedoya, C; Fernández Ramos, J P; Flix, J; Fouz, M C; Garcia-Abia, P; Gonzalez Lopez, O; Goy Lopez, S; Hernandez, J M; Josa, M I; Pérez-Calero Yzquierdo, A; Puerta Pelayo, J; Quintario Olmeda, A; Redondo, I; Romero, L; Soares, M S; Álvarez Fernández, A; de Trocóniz, J F; Missiroli, M; Moran, D; Cuevas, J; Erice, C; Fernandez Menendez, J; Gonzalez Caballero, I; González Fernández, J R; Palencia Cortezon, E; Sanchez Cruz, S; Suárez Andrés, I; Vischia, P; Vizan Garcia, J M; Cabrillo, I J; Calderon, A; Chazin Quero, B; Curras, E; Duarte Campderros, J; Fernandez, M; Garcia-Ferrero, J; Gomez, G; Lopez Virto, A; Marco, J; Martinez Rivero, C; Martinez Ruiz Del Arbol, P; Matorras, F; Piedra Gomez, J; Rodrigo, T; Ruiz-Jimeno, A; Scodellaro, L; Trevisani, N; Vila, I; Vilar Cortabitarte, R; Abbaneo, D; Auffray, E; Baillon, P; Ball, A H; Barney, D; Bianco, M; Bloch, P; Bocci, A; Botta, C; Camporesi, T; Castello, R; Cepeda, M; Cerminara, G; Chapon, E; Chen, Y; d'Enterria, D; Dabrowski, A; Daponte, V; David, A; De Gruttola, M; De Roeck, A; Di Marco, E; Dobson, M; Dorney, B; du Pree, T; Dünser, M; Dupont, N; Elliott-Peisert, A; Everaerts, P; Franzoni, G; Fulcher, J; Funk, W; Gigi, D; Gill, K; Glege, F; Gulhan, D; Gundacker, S; Guthoff, M; Harris, P; Hegeman, J; Innocente, V; Janot, P; Karacheban, O; Kieseler, J; Kirschenmann, H; Knünz, V; Kornmayer, A; Kortelainen, M J; Krammer, M; Lange, C; Lecoq, P; Lourenço, C; Lucchini, M T; Malgeri, L; Mannelli, M; Martelli, A; Meijers, F; Merlin, J A; Mersi, S; Meschi, E; Milenovic, P; Moortgat, F; Mulders, M; Neugebauer, H; Orfanelli, S; Orsini, L; Pape, L; Perez, E; Peruzzi, M; Petrilli, A; Petrucciani, G; Pfeiffer, A; Pierini, M; Racz, A; Reis, T; Rolandi, G; Rovere, M; Sakulin, H; Schäfer, C; Schwick, C; Seidel, M; Selvaggi, M; Sharma, A; Silva, P; Sphicas, P; Stakia, A; Steggemann, J; Stoye, M; Tosi, M; Treille, D; Triossi, A; Tsirou, A; Veckalns, V; Veres, G I; Verweij, M; Wardle, N; Zeuner, W D; Bertl, W; Caminada, L; Deiters, K; Erdmann, W; Horisberger, R; Ingram, Q; Kaestli, H C; Kotlinski, D; Langenegger, U; Rohe, T; Wiederkehr, S A; Bachmair, F; Bäni, L; Berger, P; Bianchini, L; Casal, B; Dissertori, G; Dittmar, M; Donegà, M; Grab, C; Heidegger, C; Hits, D; Hoss, J; Kasieczka, G; Klijnsma, T; Lustermann, W; Mangano, B; Marionneau, M; Meinhard, M T; Meister, D; Micheli, F; Musella, P; Nessi-Tedaldi, F; Pandolfi, F; Pata, J; Pauss, F; Perrin, G; Perrozzi, L; Quittnat, M; Reichmann, M; Schönenberger, M; Shchutska, L; Tavolaro, V R; Theofilatos, K; Vesterbacka Olsson, M L; Wallny, R; Zhu, D H; Aarrestad, T K; Amsler, C; Canelli, M F; De Cosa, A; Del Burgo, R; Donato, S; Galloni, C; Hreus, T; Kilminster, B; Ngadiuba, J; Pinna, D; Rauco, G; Robmann, P; Salerno, D; Seitz, C; Takahashi, Y; Zucchetta, A; Candelise, V; Doan, T H; Jain, Sh; Khurana, R; Kuo, C M; Lin, W; Pozdnyakov, A; Yu, S S; Kumar, Arun; Chang, P; Chao, Y; Chen, K F; Chen, P H; Fiori, F; Hou, W-S; Hsiung, Y; Liu, Y F; Lu, R-S; Paganis, E; Psallidas, A; Steen, A; Tsai, J F; Asavapibhop, B; Kovitanggoon, K; Singh, G; Srimanobhas, N; Adiguzel, A; Boran, F; Cerci, S; Damarseckin, S; Demiroglu, Z S; Dozen, C; Dumanoglu, I; Girgis, S; Gokbulut, G; Guler, Y; Hos, I; Kangal, E E; Kara, O; Kayis Topaksu, A; Kiminsu, U; Oglakci, M; Onengut, G; Ozdemir, K; Sunar Cerci, D; Tali, B; Turkcapar, S; Zorbakir, I S; Zorbilmez, C; Bilin, B; Karapinar, G; Ocalan, K; Yalvac, M; Zeyrek, M; Gülmez, E; Kaya, M; Kaya, O; Tekten, S; Yetkin, E A; Agaras, M N; Atay, S; Cakir, A; Cankocak, K; Grynyov, B; Levchuk, L; Sorokin, P; Aggleton, R; Ball, F; Beck, L; Brooke, J J; Burns, D; Clement, E; Cussans, D; Davignon, O; Flacher, H; Goldstein, J; Grimes, M; Heath, G P; Heath, H F; Jacob, J; Kreczko, L; Lucas, C; Newbold, D M; Paramesvaran, S; Poll, A; Sakuma, T; Seif El Nasr-Storey, S; Smith, D; Smith, V J; Bell, K W; Belyaev, A; Brew, C; Brown, R M; Calligaris, L; Cieri, D; Cockerill, D J A; Coughlan, J A; Harder, K; Harper, S; Olaiya, E; Petyt, D; Shepherd-Themistocleous, C H; Thea, A; Tomalin, I R; Williams, T; Auzinger, G; Bainbridge, R; Breeze, S; Buchmuller, O; Bundock, A; Casasso, S; Citron, M; Colling, D; Corpe, L; Dauncey, P; Davies, G; De Wit, A; Della Negra, M; Di Maria, R; Elwood, A; Haddad, Y; Hall, G; Iles, G; James, T; Lane, R; Laner, C; Lyons, L; Magnan, A-M; Malik, S; Mastrolorenzo, L; Matsushita, T; Nash, J; Nikitenko, A; Palladino, V; Pesaresi, M; Raymond, D M; Richards, A; Rose, A; Scott, E; Seez, C; Shtipliyski, A; Summers, S; Tapper, A; Uchida, K; Vazquez Acosta, M; Virdee, T; Winterbottom, D; Wright, J; Zenz, S C; Cole, J E; Hobson, P R; Khan, A; Kyberd, P; Reid, I D; Symonds, P; Teodorescu, L; Turner, M; Borzou, A; Call, K; Dittmann, J; Hatakeyama, K; Liu, H; Pastika, N; Smith, C; Bartek, R; Dominguez, A; Buccilli, A; Cooper, S I; Henderson, C; Rumerio, P; West, C; Arcaro, D; Avetisyan, A; Bose, T; Gastler, D; Rankin, D; Richardson, C; Rohlf, J; Sulak, L; Zou, D; Benelli, G; Cutts, D; Garabedian, A; Hakala, J; Heintz, U; Hogan, J M; Kwok, K H M; Laird, E; Landsberg, G; Mao, Z; Narain, M; Pazzini, J; Piperov, S; Sagir, S; Syarif, R; Yu, D; Band, R; Brainerd, C; Burns, D; Calderon De La Barca Sanchez, M; Chertok, M; Conway, J; Conway, R; Cox, P T; Erbacher, R; Flores, C; Funk, G; Gardner, M; Ko, W; Lander, R; Mclean, C; Mulhearn, M; Pellett, D; Pilot, J; Shalhout, S; Shi, M; Smith, J; Squires, M; Stolp, D; Tos, K; Tripathi, M; Wang, Z; Bachtis, M; Bravo, C; Cousins, R; Dasgupta, A; Florent, A; Hauser, J; Ignatenko, M; Mccoll, N; Saltzberg, D; Schnaible, C; Valuev, V; Bouvier, E; Burt, K; Clare, R; Ellison, J; Gary, J W; Ghiasi Shirazi, S M A; Hanson, G; Heilman, J; Jandir, P; Kennedy, E; Lacroix, F; Long, O R; Olmedo Negrete, M; Paneva, M I; Shrinivas, A; Si, W; Wang, L; Wei, H; Wimpenny, S; Yates, B R; Branson, J G; Cittolin, S; Derdzinski, M; Gerosa, R; Hashemi, B; Holzner, A; Klein, D; Kole, G; Krutelyov, V; Letts, J; Macneill, I; Masciovecchio, M; Olivito, D; Padhi, S; Pieri, M; Sani, M; Sharma, V; Simon, S; Tadel, M; Vartak, A; Wasserbaech, S; Wood, J; Würthwein, F; Yagil, A; Zevi Della Porta, G; Amin, N; Bhandari, R; Bradmiller-Feld, J; Campagnari, C; Dishaw, A; Dutta, V; Franco Sevilla, M; George, C; Golf, F; Gouskos, L; Gran, J; Heller, R; Incandela, J; Mullin, S D; Ovcharova, A; Qu, H; Richman, J; Stuart, D; Suarez, I; Yoo, J; Anderson, D; Bendavid, J; Bornheim, A; Lawhorn, J M; Newman, H B; Nguyen, T; Pena, C; Spiropulu, M; Vlimant, J R; Xie, S; Zhang, Z; Zhu, R Y; Andrews, M B; Ferguson, T; Mudholkar, T; Paulini, M; Russ, J; Sun, M; Vogel, H; Vorobiev, I; Weinberg, M; Cumalat, J P; Ford, W T; Jensen, F; Johnson, A; Krohn, M; Leontsinis, S; Mulholland, T; Stenson, K; Wagner, S R; Alexander, J; Chaves, J; Chu, J; Dittmer, S; Mcdermott, K; Mirman, N; Patterson, J R; Rinkevicius, A; Ryd, A; Skinnari, L; Soffi, L; Tan, S M; Tao, Z; Thom, J; Tucker, J; Wittich, P; Zientek, M; Abdullin, S; Albrow, M; Apollinari, G; Apresyan, A; Apyan, A; Banerjee, S; Bauerdick, L A T; Beretvas, A; Berryhill, J; Bhat, P C; Bolla, G; Burkett, K; Butler, J N; Canepa, A; Cerati, G B; Cheung, H W K; Chlebana, F; Cremonesi, M; Duarte, J; Elvira, V D; Freeman, J; Gecse, Z; Gottschalk, E; Gray, L; Green, D; Grünendahl, S; Gutsche, O; Harris, R M; Hasegawa, S; Hirschauer, J; Hu, Z; Jayatilaka, B; Jindariani, S; Johnson, M; Joshi, U; Klima, B; Kreis, B; Lammel, S; Lincoln, D; Lipton, R; Liu, M; Liu, T; Lopes De Sá, R; Lykken, J; Maeshima, K; Magini, N; Marraffino, J M; Maruyama, S; Mason, D; McBride, P; Merkel, P; Mrenna, S; Nahn, S; O'Dell, V; Pedro, K; Prokofyev, O; Rakness, G; Ristori, L; Schneider, B; Sexton-Kennedy, E; Soha, A; Spalding, W J; Spiegel, L; Stoynev, S; Strait, J; Strobbe, N; Taylor, L; Tkaczyk, S; Tran, N V; Uplegger, L; Vaandering, E W; Vernieri, C; Verzocchi, M; Vidal, R; Wang, M; Weber, H A; Whitbeck, A; Acosta, D; Avery, P; Bortignon, P; Bourilkov, D; Brinkerhoff, A; Carnes, A; Carver, M; Curry, D; Field, R D; Furic, I K; Konigsberg, J; Korytov, A; Kotov, K; Ma, P; Matchev, K; Mei, H; Mitselmakher, G; Rank, D; Sperka, D; Terentyev, N; Thomas, L; Wang, J; Wang, S; Yelton, J; Joshi, Y R; Linn, S; Markowitz, P; Rodriguez, J L; Ackert, A; Adams, T; Askew, A; Hagopian, S; Hagopian, V; Johnson, K F; Kolberg, T; Martinez, G; Perry, T; Prosper, H; Saha, A; Santra, A; Yohay, R; Baarmand, M M; Bhopatkar, V; Colafranceschi, S; Hohlmann, M; Noonan, D; Roy, T; Yumiceva, F; Adams, M R; Apanasevich, L; Berry, D; Betts, R R; Cavanaugh, R; Chen, X; Evdokimov, O; Gerber, C E; Hangal, D A; Hofman, D J; Jung, K; Kamin, J; Sandoval Gonzalez, I D; Tonjes, M B; Trauger, H; Varelas, N; Wang, H; Wu, Z; Zhang, J; Bilki, B; Clarida, W; Dilsiz, K; Durgut, S; Gandrajula, R P; Haytmyradov, M; Khristenko, V; Merlo, J-P; Mermerkaya, H; Mestvirishvili, A; Moeller, A; Nachtman, J; Ogul, H; Onel, Y; Ozok, F; Penzo, A; Snyder, C; Tiras, E; Wetzel, J; Yi, K; Blumenfeld, B; Cocoros, A; Eminizer, N; Fehling, D; Feng, L; Gritsan, A V; Maksimovic, P; Roskes, J; Sarica, U; Swartz, M; Xiao, M; You, C; Al-Bataineh, A; Baringer, P; Bean, A; Boren, S; Bowen, J; Castle, J; Khalil, S; Kropivnitskaya, A; Majumder, D; Mcbrayer, W; Murray, M; Royon, C; Sanders, S; Schmitz, E; Stringer, R; Tapia Takaki, J D; Wang, Q; Ivanov, A; Kaadze, K; Maravin, Y; Mohammadi, A; Saini, L K; Skhirtladze, N; Toda, S; Rebassoo, F; Wright, D; Anelli, C; Baden, A; Baron, O; Belloni, A; Calvert, B; Eno, S C; Ferraioli, C; Hadley, N J; Jabeen, S; Jeng, G Y; Kellogg, R G; Kunkle, J; Mignerey, A C; Ricci-Tam, F; Shin, Y H; Skuja, A; Tonwar, S C; Abercrombie, D; Allen, B; Azzolini, V; Barbieri, R; Baty, A; Bi, R; Brandt, S; Busza, W; Cali, I A; D'Alfonso, M; Demiragli, Z; Gomez Ceballos, G; Goncharov, M; Hsu, D; Iiyama, Y; Innocenti, G M; Klute, M; Kovalskyi, D; Lai, Y S; Lee, Y-J; Levin, A; Luckey, P D; Maier, B; Marini, A C; Mcginn, C; Mironov, C; Narayanan, S; Niu, X; Paus, C; Roland, C; Roland, G; Salfeld-Nebgen, J; Stephans, G S F; Tatar, K; Velicanu, D; Wang, J; Wang, T W; Wyslouch, B; Benvenuti, A C; Chatterjee, R M; Evans, A; Hansen, P; Kalafut, S; Kubota, Y; Lesko, Z; Mans, J; Nourbakhsh, S; Ruckstuhl, N; Rusack, R; Turkewitz, J; Acosta, J G; Oliveros, S; Avdeeva, E; Bloom, K; Claes, D R; Fangmeier, C; Gonzalez Suarez, R; Kamalieddin, R; Kravchenko, I; Monroy, J; Siado, J E; Snow, G R; Stieger, B; Alyari, M; Dolen, J; Godshalk, A; Harrington, C; Iashvili, I; Nguyen, D; Parker, A; Rappoccio, S; Roozbahani, B; Alverson, G; Barberis, E; Hortiangtham, A; Massironi, A; Morse, D M; Nash, D; Orimoto, T; Teixeira De Lima, R; Trocino, D; Wood, D; Bhattacharya, S; Charaf, O; Hahn, K A; Mucia, N; Odell, N; Pollack, B; Schmitt, M H; Sung, K; Trovato, M; Velasco, M; Dev, N; Hildreth, M; Hurtado Anampa, K; Jessop, C; Karmgard, D J; Kellams, N; Lannon, K; Loukas, N; Marinelli, N; Meng, F; Mueller, C; Musienko, Y; Planer, M; Reinsvold, A; Ruchti, R; Smith, G; Taroni, S; Wayne, M; Wolf, M; Woodard, A; Alimena, J; Antonelli, L; Bylsma, B; Durkin, L S; Flowers, S; Francis, B; Hart, A; Hill, C; Ji, W; Liu, B; Luo, W; Puigh, D; Winer, B L; Wulsin, H W; Benaglia, A; Cooperstein, S; Driga, O; Elmer, P; Hardenbrook, J; Hebda, P; Higginbotham, S; Lange, D; Luo, J; Marlow, D; Mei, K; Ojalvo, I; Olsen, J; Palmer, C; Piroué, P; Stickland, D; Tully, C; Malik, S; Norberg, S; Barker, A; Barnes, V E; Das, S; Folgueras, S; Gutay, L; Jha, M K; Jones, M; Jung, A W; Khatiwada, A; Miller, D H; Neumeister, N; Peng, C C; Schulte, J F; Sun, J; Wang, F; Xie, W; Cheng, T; Parashar, N; Stupak, J; Adair, A; Akgun, B; Chen, Z; Ecklund, K M; Geurts, F J M; Guilbaud, M; Li, W; Michlin, B; Northup, M; Padley, B P; Roberts, J; Rorie, J; Tu, Z; Zabel, J; Bodek, A; de Barbaro, P; Demina, R; Duh, Y T; Ferbel, T; Galanti, M; Garcia-Bellido, A; Han, J; Hindrichs, O; Khukhunaishvili, A; Lo, K H; Tan, P; Verzetti, M; Ciesielski, R; Goulianos, K; Mesropian, C; Agapitos, A; Chou, J P; Christos, M; Feigelis, K; Gershtein, Y; Gómez Espinosa, T A; Halkiadakis, E; Heindl, M; Hughes, E; Kaplan, S; Kunnawalkam Elayavalli, R; Kyriacou, S; Lath, A; Montalvo, R; Nash, K; Osherson, M; Saka, H; Salur, S; Schnetzer, S; Sheffield, D; Somalwar, S; Stone, R; Thomas, S; Thomassen, P; Walker, M; Zhou, B; Delannoy, A G; Foerster, M; Heideman, J; Riley, G; Rose, K; Spanier, S; Thapa, K; Bouhali, O; Castaneda Hernandez, A; Celik, A; Dalchenko, M; De Mattia, M; Delgado, A; Dildick, S; Eusebi, R; Gilmore, J; Huang, T; Kamon, T; Mueller, R; Pakhotin, Y; Patel, R; Perloff, A; Perniè, L; Rathjens, D; Safonov, A; Tatarinov, A; Ulmer, K A; Akchurin, N; Damgov, J; De Guio, F; Dudero, P R; Faulkner, J; Gurpinar, E; Kunori, S; Lamichhane, K; Lee, S W; Libeiro, T; Peltola, T; Undleeb, S; Volobouev, I; Wang, Z; Greene, S; Gurrola, A; Janjam, R; Johns, W; Maguire, C; Melo, A; Ni, H; Sheldon, P; Tuo, S; Velkovska, J; Xu, Q; Arenton, M W; Barria, P; Cox, B; Hirosky, R; Ledovskoy, A; Li, H; Neu, C; Sinthuprasith, T; Sun, X; Wang, Y; Wolfe, E; Xia, F; Harr, R; Karchin, P E; Sturdy, J; Zaleski, S; Brodski, M; Buchanan, J; Caillol, C; Dasu, S; Dodd, L; Duric, S; Gomber, B; Grothe, M; Herndon, M; Hervé, A; Hussain, U; Klabbers, P; Lanaro, A; Levine, A; Long, K; Loveless, R; Pierro, G A; Polese, G; Ruggles, T; Savin, A; Smith, N; Smith, W H; Taylor, D; Woods, N

2017-12-01

A search for a signal consistent with the type-III seesaw mechanism in events with three or more electrons or muons is presented. The data sample consists of proton-proton collisions at sqrt[s]=13  TeV collected by the CMS experiment at the LHC in 2016 and corresponds to an integrated luminosity of 35.9  fb^{-1}. Selection criteria based on the number of leptons and the invariant mass of oppositely charged lepton pairs are used to distinguish the signal from the standard model background. The observations are consistent with the expectations from standard model processes. The results are used to place limits on the production of heavy fermions of the type-III seesaw model as a function of the branching ratio to each lepton flavor. In the scenario of equal branching fractions to each lepton flavor, heavy fermions with masses below 840 GeV are excluded. This is the most sensitive probe to date of the type-III seesaw mechanism.

Oxo-group-14-element bond formation in binuclear uranium(V) pacman complexes

International Nuclear Information System (INIS)

Jones, Guy M.; Arnold, Polly L.; Love, Jason B.

2013-01-01

Simple and versatile routes to the functionalization of uranyl-derived U"V-oxo groups are presented. The oxo-lithiated, binuclear uranium(V)-oxo complexes [{(py)_3LiOUO}_2(L)] and [{(py)_3LiOUO}(OUOSiMe_3)(L)] were prepared by the direct combination of the uranyl(VI) silylamide ''ate'' complex [Li(py)_2][(OUO)(N'')_3](N''=N(SiMe_3)_2) with the polypyrrolic macrocycle H_4L or the mononuclear uranyl (VI) Pacman complex [UO_2(py)(H_2L)], respectively. These oxo-metalated complexes display distinct U-O single and multiple bonding patterns and an axial/equatorial arrangement of oxo ligands. Their ready availability allows the direct functionalization of the uranyl oxo group leading to the binuclear uranium(V) oxo-stannylated complexes [{(R_3Sn)OUO}_2(L)] (R=nBu, Ph), which represent rare examples of mixed uranium/tin complexes. Also, uranium-oxo-group exchange occurred in reactions with [TiCl(OiPr)_3] to form U-O-C bonds [{(py)_3LiOUO}(OUOiPr)(L)] and [(iPrOUO)_2(L)]. Overall, these represent the first family of uranium(V) complexes that are oxo-functionalised by Group 14 elements. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Binding of von Willebrand factor to collagen type III: role of specific amino acids in the collagen binding domain of vWF and effects of neighboring domains

NARCIS (Netherlands)

van der Plas, R. M.; Gomes, L.; Marquart, J. A.; Vink, T.; Meijers, J. C.; de Groot, P. G.; Sixma, J. J.; Huizinga, E. G.

2000-01-01

Binding of von Willebrand Factor (vWF) to sites of vascular injury is the first step of hemostasis. Collagen types I and III are important binding sites for vWF. We have previously determined the three-dimensional structure of the collagen binding A3 domain of vWF (Huizinga et al., Structure 1997;

Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

DEFF Research Database (Denmark)

Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

2016-01-01

Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

Computer Based Assessment of Cervical Vertebral Maturation Stages Using Digital Lateral Cephalograms.

Science.gov (United States)

Dzemidzic, Vildana; Sokic, Emir; Tiro, Alisa; Nakas, Enita

2015-12-01

This study was aimed to investigate the reliability of a computer application for assessment of the stages of cervical vertebra maturation in order to determine the stage of skeletal maturity. For this study, digital lateral cephalograms of 99 subjects (52 females and 47 males) were examined. The following selection criteria were used during the sample composition: age between 9 and 16 years, absence of anomalies of the vertebrae, good general health, no history of trauma at the cervical region. Subjects with lateral cephalograms of low quality were excluded from the study. For the purpose of this study a computer application Cephalometar HF V1 was developed. This application was used to mark the contours of the second, third and fourth cervical vertebrae on the digital lateral cephalograms, which enabled a computer to determine the stage of cervical vertebral maturation. The assessment of the stages of cervical vertebral maturation was carried out by an experienced orthodontist. The assessment was conducted according to the principles of the method proposed by authors Hassel and Farman. The degree of the agreement between the computer application and the researcher was analyzed using by statistical Cohen Kappa test. The results of this study showed the agreement between the computer assessment and the researcher assessment of the cervical vertebral maturation stages, where the value of the Cohen Kappa coefficient was 0.985. The computer application Cephalometar HF V1 proved to be a reliable method for assessing the stages of cervical vertebral maturation. This program could help the orthodontists to identify the stage of cervical vertebral maturation when planning the orthodontic treatment for the patients with skeletal disharmonies.

Postoperative radiotherapy for stage II and III rectal cancer

International Nuclear Information System (INIS)

Qian Liting; Song Yongwen; Liu Xinfan; Yu Zihao; Qian Tunan; Li Yexiong

2003-01-01

Objective: To evaluate the impact of postoperative adjuvant radiotherapy, compared with surgery alone for rectal cancer. Methods: From January 1994 to October 1997, 192 patients with stage II or III rectal cancer were treated by radical resection and postoperative radiotherapy (Group S + R) and 51 patients with the same stage lesions underwent surgery alone (Group S). The median dose of radiation was 50(32-62) Gy. Kaplan-Meier method and Log-rank test were used for analysis. Results: The 5-year overall and disease-free survival rates were 60.3% and 58.3%, respectively. The overall 5-year survival rate was 59.4% in Group S + R and 64.7% in Group S, and the 5-year disease-free survival rates were 57.0% and 66.4%, respectively. There were no significant differences between either group (P=0.601 and P=0.424). The disease-free survival was not significantly prolonged in Group S + R as compared with that of Group S. The local recurrence rate was evidently reduced in Group S + R (15.8% v 26.8%, P=0.043). Conclusion: Local recurrence is a major cause of morbidity and mortality in rectal cancer. Postoperative radiotherapy, though reduces the incidence of local recurrence, does not improve the survival in the treatment of stage II and III diseases

Solar neutrino measurements with Super-Kamiokande III

International Nuclear Information System (INIS)

Ikeda, Motoyasu

2008-01-01

The third phase of Super-Kamiokande experiment (SK-III) has been running since 12th July, 2006. The SK-III detector is achieved 40% photo-cathode coverage with 11,129 20-inch PMTs. One of the physics goals in SK-III is observing the transition of solar neutrino oscillations between vacuum and matter oscillation around 4MeV. From 24th January, 2007 to 2nd March, 2008, we obtained data of live-time 288.9 days with energy threshold 6.5MeV (Full Final sample: FF sample). For data with a lower energy threshold 5.0MeV, we needed remove high radon contaminated period from the FF sample, then we obtained another data sample (Radon reduced sample: RR sample) with live-time 191.7 days. The current measurements show that SK-III has already achieved a similar signal to noise ratio as SK-I for energy range from 5.0 to 20.0MeV, and the solar angle distribution of FF sample shows that the solar neutrino event rate also looks consistent with SK-I for energy range from 6.5 to 20.0MeV. As for the RR sample, although the vertex distribution of low energy events is not uniform in the detector and there are more BG events in the edge of fiducial volume, it is clear that SK-III BG level is smaller than that of SK-I in the central region of the detector. Finally, the future plan for lowering the energy threshold shows a 2a discovery potential of the energy spectrum upturn with 3 years of observation after both software and hardware improvements.

Should an obsessive-compulsive spectrum grouping of disorders be included in DSM-V?

Science.gov (United States)

Phillips, Katharine A; Stein, Dan J; Rauch, Scott L; Hollander, Eric; Fallon, Brian A; Barsky, Arthur; Fineberg, Naomi; Mataix-Cols, David; Ferrão, Ygor Arzeno; Saxena, Sanjaya; Wilhelm, Sabine; Kelly, Megan M; Clark, Lee Anna; Pinto, Anthony; Bienvenu, O Joseph; Farrow, Joanne; Leckman, James

2010-06-01

The obsessive-compulsive (OC) spectrum has been discussed in the literature for two decades. Proponents of this concept propose that certain disorders characterized by repetitive thoughts and/or behaviors are related to obsessive-compulsive disorder (OCD), and suggest that such disorders be grouped together in the same category (i.e. grouping, or "chapter") in DSM. This article addresses this topic and presents options and preliminary recommendations to be considered for DSM-V. The article builds upon and extends prior reviews of this topic that were prepared for and discussed at a DSM-V Research Planning Conference on Obsessive-Compulsive Spectrum Disorders held in 2006. Our preliminary recommendation is that an OC-spectrum grouping of disorders be included in DSM-V. Furthermore, we preliminarily recommend that consideration be given to including this group of disorders within a larger supraordinate category of "Anxiety and Obsessive-Compulsive Spectrum Disorders." These preliminary recommendations must be evaluated in light of recommendations for, and constraints upon, the overall structure of DSM-V. (c) 2010 Wiley-Liss, Inc.

Incidence and specificity of antibodies to types I, II, III, IV, and V collagen in rheumatoid arthritis and other rheumatic diseases as measured by 125I-radioimmunoassay

International Nuclear Information System (INIS)

Stuart, J.M.; Huffstutter, E.H.; Townes, A.S.; Kang, A.H.

1983-01-01

Antibodies to human native and denatured types I, II, III, IV, and V collagens were measured using 125I-radioimmunoassay. Mean levels of binding by sera from 30 rheumatoid arthritis patients were significantly higher than those from 20 normal subjects against all of the collagens tested. The relative antibody concentration was higher in synovial fluid than in simultaneously obtained serum. Many patients with gout or various other rheumatic diseases also had detectable anticollagen antibodies. With a few notable exceptions, the majority of the reactivity detected in all patient groups was directed against covalent structural determinants present on all of the denatured collagens, suggesting a secondary reaction to tissue injury

Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Wurstbauer, Ursula

2008-04-15

Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

Brainstem auditory evoked response characteristics in normal-hearing subjects with chronic tinnitus and in non-tinnitus group

Directory of Open Access Journals (Sweden)

Shadman Nemati

2014-06-01

Full Text Available Background and Aim: While most of the people with tinnitus have some degrees of hearing impairment, a small percent of patients admitted to ear, nose and throat clinics or hearing evaluation centers are those who complain of tinnitus despite having normal hearing thresholds. This study was performed to better understanding of the reasons of probable causes of tinnitus and to investigate possible changes in the auditory brainstem function in normal-hearing patients with chronic tinnitus.Methods: In this comparative cross-sectional, descriptive and analytic study, 52 ears (26 with and 26 without tinnitus were examined. Components of the auditory brainstem response (ABR including wave latencies and wave amplitudes were determined in the two groups and analyzed using appropriate statistical methods.Results: The mean differences between the absolute latencies of waves I, III and V was less than 0.1 ms between the two groups that was not statistically significant. Also, the interpeak latency values of waves I-III, III-V and I-V in both groups had no significant difference. Only, the V/I amplitude ratio in the tinnitus group was significantly higher (p=0.04.Conclusion: The changes observed in amplitude of waves, especially in the latter ones, can be considered as an indication of plastic changes in neuronal activity and its possible role in generation of tinnitus in normal-hearing patients.

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

International Nuclear Information System (INIS)

Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

2017-01-01

Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

2017-07-11

Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

Separation by liquid-liquid extraction of actinides(III) from lanthanides(III) using new molecules: the picolinamides; Separation par extraction liquide-liquide des actinides(III) des lanthanides(III) par de nouvelles molecules: les picolinamides

Energy Technology Data Exchange (ETDEWEB)

Cordier, P Y [CEA Marcoule, Departement de Recherche en Retraitement et en Vitrification, 30 - Bagnols-sur-Ceze (France); [Clermont-Ferrand-2 Univ., 63 - Aubiere (France)

1996-07-01

In the field of long-lived radionuclides separation from waste generated during spent fuel reprocessing, the picolinamides have been chosen as potential extractants for the selective extraction of actinides (III) from lanthanides (III). The first studies initiated on the most simple molecule of the picolinamide family, namely 2-pyridinecarboxamide, pointed out that in an aqueous media the complexation stability constant between this ligand and Am(III) is roughly 10 times higher than the ones corresponding to Ln(III). The synthesis of lipophilic derivatives of 2-pyridinecarboxamide leaded to extraction experiments. The extraction of metallic cation by lipophilic picolinamides, according to a solvatation mechanism, is strongly dependent on the nature of the amide function: a primary amide function (group I) leads to a good extraction; on the contrary, there is a decrease for secondary (group II) and tertiary (group III) amide functions. From a theoretical point of view, this work leads finally to the following conclusions: confirmation of the importance of the presence of soft donor atoms within the extractants (nitrogen in our case) for An(III)/Ln(III). Also, sensitivity of this soft donor atom regarding the protonation reaction; prevalence in our case of the affinity of the extractant for the metallic cation over the lipophilia of the extractant to ensure good distribution coefficients. The extraction and Am(III)/Ln(III) separation performances of the picolinamides from pertechnetic media leads to the design of a possible flowsheet for the reprocessing of high level liquid waste, with the new idea of an integrated technetium reflux. (author) 105 refs.

Radiographic Assessment of Dental Maturation in Children With Dental Agenesis.

Science.gov (United States)

Medina, Aida Carolina; Pozo, Rodrigo Del; de Cedres, Lucila Blanco

Dental agenesis is the most common developmental anomaly in humans, frequently associated with disorders in dental development and maturation. The purpose of this study is to determine radiographic variations in dental maturation in a group of Venezuelan children with dental agenesis. 1,188 panoramic radiographs, from healthy patients ages 5 to 12 years old were studied for agenesis of permanent teeth. Dental maturation was assessed by relative eruption and dental age according to Nolla, comparing children affected with dental agenesis to a stratified control group selected from the same population, excluding children with premature loss of primary teeth in the left quadrants and unclear radiographs. Descriptive analysis, and differences between means and medians (Student t test, Kruskall-Wallis p=0.05) were performed. Medians for Nolla stages were similar between groups, with delay in tooth formation in the agenesis group for second molars (p<0.05) and maxillary lateral incisors and second premolars. Dental age was significantly underestimated for both groups, -0.89 (±0.78) for the control group and -1.20 (±0.95) for the study group. Tooth eruption was similar between groups. Dental age was significantly delayed in Venezuelan children with dental agenesis, with variable significance for tooth formation of studied teeth.

ACRIM III Level 2 Daily Mean Data V001

Data.gov (United States)

National Aeronautics and Space Administration — Active Cavity Radiometer Irradiance Monitor (ACRIM) III Level 2 Daily Mean Data product consists of Level 2 total solar irradiance in the form of daily means...

Enterprise Risk Management Implementation Maturity in Non Bank and Financial Companies

Directory of Open Access Journals (Sweden)

Subagio Tjahjono

2017-07-01

Full Text Available Previous studies of ERM implementation mostly using dummy variable to figure out relation with its determinant. Until today, studies that using risk management maturity as real variable are limited. Therefore, this study intends to determine the maturity level of ERM implementation in non-financial companies listed on Indonesia Stock Exchange during period 2015 and influence of firm’s total assets, total employee, leverage and public ownership to the ERM maturity. The method use are qualitative and multiple regression analysis. The result of data analysis showed that ERM implementation in selected sample during 2015 are still low (majority in initial and repeatable level. In addition, from determinant factors only total asset that have significant influence to the ERM maturity. This result implies that non-financial listed companies are vulnerable to risks. Management should consider future benefit of a mature ERM, not only to comply with regulation.DOI: 10.15408/etk.v16i2.5440 

CMPO-calix[4]arenes and the influence of structural modifications on the Eu(III), Am(III), Cm(III) separation

International Nuclear Information System (INIS)

Peters, C.; Braekers, D.; Desreux, J.F.; Kasyan, O.; Miroshnichenko, S.; Rudzevich, V.; Boehmer, V.

2008-01-01

The syntheses of new calix[4]arenes featuring CMPO groups on the wide rim are reported and the extraction of Am(III) and Eu(III) from concentrated HNO 3 aqueous phases are discussed with reference to the properties of the symmetric tetra-CMPO derivative 1. All extraction studies were conducted in the same experimental conditions which allows to directly compare the dependence of the distribution coefficients of various calixarenes on the acid concentration (0.1 M 3 ] < 5 M). Calix[4]arene 1 becomes a very poor extractant if the length of the aliphatic chain between the amide and phosphine oxide groups of CMPO is increased, if the bridging methylene groups are replaced by sulfur atoms or if the macrocyclic cavity size is increased. By contrast, mixed amide - CMPO calix[4]arenes are nearly as effective than 1. Moreover, Am(III)/Cm(III) separation coefficients between 1.5 and 3 have been obtained with unsymmetrical calix[4]arenes of type 1 with different aliphatic chains grafted on the narrow rim. Guidelines to anticipate the extraction ability of calix[4]arenes remain elusive because of the intricate solution behavior of these compounds. (orig.)

Relationship between time post-ovulation and progesterone on oocyte maturation and pregnancy in canine cloning.