Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

Energy Technology Data Exchange (ETDEWEB)

Kazadevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

2017-05-01

Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verified with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.

Phase Grouping of Larmor Electrons by a Synchronous Wave in Controlled Magnetrons

Energy Technology Data Exchange (ETDEWEB)

Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

2018-04-01

A simplified analytical model based on the charge drift approximation has been developed. It considers the resonant interaction of the synchronous wave with the flow of Larmor electrons in a magnetron. The model predicts stable coherent generation of the tube above and below the threshold of self-excitation. This occurs if the magnetron is driven by a sufficient resonant injected signal (up to -10 dB). The model substantiates precise stability, high efficiency and low noise at the range of the magnetron power control over 10 dB by variation of the magnetron current. The model and the verifying experiments with 2.45 GHz, 1 kW magnetrons are discussed.

Geometrical Aspects of a Hollow-cathode Magnetron (HCM)

International Nuclear Information System (INIS)

Cohen, Samuel A.; Wang, Zhehui

1998-01-01

A hollow-cathode magnetron (HCM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS), is operable at substantially lower pressures than its planar-magnetron counterpart. We have studied the dependence of magnetron operational parameters on the inner diameter D and length L of a cylindrical HCS. Only when L is greater than L sub zero, a critical length, is the HCM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic or primary electron transport. At pressures above 1 mTorr, an electron-impact ionization model with Bohm diffusion at a temperature equivalent to one-half the primary electron energy and with an ambipolar constraint can explain the ion-electron pair creation required to sustain the discharge. The critical length L sub zero is determined by the magnetization length of the primary electrons

A novel injection-locked amplitude-modulated magnetron at 1497 MHz

Energy Technology Data Exchange (ETDEWEB)

Neubauer, Michael [Muons Inc., Batavia, IL (United States); Wang, Haipeng [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

2015-12-15

Thomas Jefferson National Accelerator Facility (JLab) uses low efficiency klystrons in the CEBAF machine. In the older portion they operate at 30% efficiency with a tube mean time between failure (MTBF) of five to six years. A highly efficient source (>55-60%) must provide a high degree of backwards compatibility, both in size and voltage requirements, to replace the klystron presently used at JLab, while providing energy savings. Muons, Inc. is developing a highly reliable, highly efficient RF source based upon a novel injection-locked amplitude modulated (AM) magnetron with a lower total cost of ownership, >80% efficiency, and MTBF of six to seven years. The design of the RF source is based upon a single injection-locked magnetron system at 8 kW capable of operating up to 13 kW, using the magnetron magnetic field to achieve the AM required for backwards compatibility to compensate for microphonics and beam loads. A novel injection-locked 1497 MHz 8 kW AM magnetron with a trim magnetic coil was designed and its operation numerically simulated during the Phase I project. The low-level RF system to control the trim field and magnetron anode voltage was designed and modeled for operation at the modulation frequencies of the microphonics. A plan for constructing a prototype magnetron and control system was developed.

Ring magnetron ionizer

International Nuclear Information System (INIS)

Alessi, J.G.

1986-01-01

A ring magnetron D - charge exchange ionizer has been built and tested. An H - current of 500 μA was extracted with an estimated H 0 density in the ionizer of 10 12 cm -3 . This exceeds the performance of ionizers presently in use on polarized H - sources. The ionizer will soon be tested with a polarized atomic beam

DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

Directory of Open Access Journals (Sweden)

A. P. Burmakov

2012-01-01

Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

Science.gov (United States)

Jacobs, Andrew

2016-09-01

At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

Magnetron injection gun scaling

International Nuclear Information System (INIS)

Lawson, W.

1988-01-01

Existing analytic design equations for magnetron injection guns (MIG's) are approximated to obtain a set of scaling laws. The constraints are chosen to examine the maximum peak power capabilities of MIG's. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations

Life test on indigenous s-band pulsed magnetron

International Nuclear Information System (INIS)

Wanmode, Y.D.; Shrivastava, P.; Hannurkar, P.R.

1999-01-01

A 2 MW S-band pulsed magnetron has been developed under joint collaboration between CAT and CEERI. In this development effort several lab prototypes were evaluated on 2 MW microwave test facility developed at CAT. One magnetron is subjected to life test. The present paper describes the setup and procedures used for life test. Various observations and corrections made during the life tests are also described. Results of the tests are discussed. (author)

Phase and Frequency Locked Magnetrons for SRF Sources

Energy Technology Data Exchange (ETDEWEB)

Neubauer, Michael [Muons, Inc.; Johnson, Rolland

2014-09-12

There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

Very low pressure high power impulse triggered magnetron sputtering

Science.gov (United States)

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Fuzzy tungsten in a magnetron sputtering device

Energy Technology Data Exchange (ETDEWEB)

Petty, T.J., E-mail: tjpetty@liv.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom); Khan, A. [Pariser Building-G11, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL (United Kingdom); Heil, T. [NiCaL, Block C Waterhouse Building, 1-3 Brownlow Street, Liverpool, L69 3GL (United Kingdom); Bradley, J.W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

2016-11-15

Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10{sup 23}–3.0 × 10{sup 24} m{sup −2}, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10{sup 24} m{sup −2}, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ{sup 1/2} relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

Fuzzy tungsten in a magnetron sputtering device

International Nuclear Information System (INIS)

Petty, T.J.; Khan, A.; Heil, T.; Bradley, J.W.

2016-01-01

Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10 23 –3.0 × 10 24  m −2 , the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10 24  m −2 , and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ 1/2 relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

International Nuclear Information System (INIS)

Han, Jeon G

2009-01-01

The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

Influence of Magnetron Effect on Barium Hexaferrite Thin Layers

International Nuclear Information System (INIS)

Hassane, H.; Chatelon, J.P.; Rousseau, J.J; Siblini, A.; Kriga, A.

2011-01-01

In this paper, we study the effects of a magnet, located in the cathode, on barium hexaferrite thin films deposited by RF magnetron sputtering technique. During the process, these effects can modify thickness, roughness and stress of coatings. The characteristics of the deposited layers depend on the substrate position that is located opposite of magnetron cathode. In the m agnetron area , one can observe that the high stress can produce cracks or detachment of layers and the increasing of both depositing rate and surface roughness. After sputtering elaboration, barium hexaferrite films are in a compressive stress mode. But, after the post-deposition heat treatment these films are in a tensile stress mode. To improve the quality of BaM films, the subsrtate has to be set outside the magnetron area. (author)

Structure of AlN films deposited by magnetron sputtering method

Directory of Open Access Journals (Sweden)

Nowakowska-Langier K.

2015-09-01

Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

Energy Technology Data Exchange (ETDEWEB)

Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M.; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

2016-10-21

A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operation cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.

Nanoporous zinc oxide films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

2011-01-01

In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

Energy Technology Data Exchange (ETDEWEB)

Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Electron Beam and Plasma Technology, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Silze, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

2014-05-15

An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

Reactive magnetron sputtering model at making Ti-TiOx coatings

International Nuclear Information System (INIS)

Luchkin, A G; Kashapov, N F

2014-01-01

Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

Substrate heating and cooling during magnetron sputtering of copper target

Energy Technology Data Exchange (ETDEWEB)

Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S., E-mail: stopnastia@gmail.com; Baykov, Pavel B.; Karzin, Vitaliy V.

2016-02-22

Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density. - Highlights: • New effect of heat outflow from substrate when magnetron is on was discovered. • This new effect is linear in terms of heat outflow rate to target current ratio. • Kinetic equation for heating process additively considers this effect.

Variable Power, Short Microwave Pulses Generation using a CW Magnetron

Directory of Open Access Journals (Sweden)

CIUPA, R.

2011-05-01

Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

A Plasma Lens for Magnetron Sputtering

International Nuclear Information System (INIS)

Anders, Andre; Brown, Jeff

2010-01-01

A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

Geometrical aspects of a hollow-cathode planar magnetron

International Nuclear Information System (INIS)

Wang, Z.; Cohen, S.A.

1999-01-01

A hollow-cathode planar magnetron (HCPM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS) [Z. Wang and S. A. Cohen, J. Vac. Sci. Technol. A 17, 77 (1999)], is operable at substantially lower pressures than its planar-magnetron counterpart. HCPM operational parameters depend on the inner diameter D and length L of its cylindrical HCS. Only when L is greater than L 0 , a critical length, is the HCPM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic electron transport. At pressures above 1 mTorr, Bohm diffusion (temperature congruent primary electron energy), with an ambipolar constraint, can explain the ion - electron pair creation required to sustain the discharge. At the lowest pressure, ∼0.3 mTorr, collision-limited diffusion creates fewer ion - electron pairs than required for steady state and therefore cannot explain the experimental data. The critical length L 0 is consistent with the magnetization length of the primary electrons. copyright 1999 American Institute of Physics

Magnetron with smooth anode. Statistical theory and ordered oscillations; Magnetron a anode lisse. Theorie statistique et oscillations ordonnees

Energy Technology Data Exchange (ETDEWEB)

Coste, J.

1961-03-15

We have to investigate the equilibrium regime that appears between a hot cathode and the electronic cloud that is confined around the cathode by a magnetic field parallel to its axis. The densities being high enough to involve the effect of space charge. The challenge of the magnetron theory is to face 2 issues: first the structure of the electronic cloud in a diode submitted to a magnetic field and secondly the oscillations that are likely to appear in this cloud. In this work we have made 2 attempts to clarify the situation, we have extended the classical theory of the static charge of space through a study of its oscillation modes on one hand and on the other hand we have tackled the issue of the structure of the electronic cloud with the tool of statistics. This document is divided into 2 chapters. In the first chapter we present a static study of the magnetron in which we take a statistical approach deliberately. We give answers to the issue of the thermodynamical equilibrium of the electronic cloud and we have found a mode very close to the Brillouin mode. The statistical approach has made us discuss the boundary conditions on the cathode, it means the coupling between the cathode and the electronic cloud. In the second chapter we present the theoretical study of the oscillations in a magnetron operating in the Brillouin mode. The resonances that appear in experimental data stay difficult to explain.

Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

International Nuclear Information System (INIS)

Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

2005-01-01

It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

High-current magnetron discharge with magnetic insulation of anode

International Nuclear Information System (INIS)

Bizyukov, A.A.; Sereda, K.N.; Sleptsov, V.V.

2008-01-01

In magnetron discharge at currents higher then critical which magnitude is in the range of 15...30 A the transition from glow discharge in transverse magnetic field to arc discharge occurs. In the present time the problem of arc blowout is solved at the expense of pulse and HF power supply applying. In this paper the alternative method of limiting current of magnetron discharge increasing at the expense of increasing of discharge gap resistance by means of additional anode layer transverse magnetic field and arc current interruption by sectioning of current collector of anode surface is carrying out

Commissioning of indigenous microwave test facility for development and pilot production of 2 MW S-band magnetrons

International Nuclear Information System (INIS)

Shrivastava, Purushottam; Wanmode, Y.D.; Hannurkar, P.R.; Prasad, Sharda

2005-01-01

To have self reliance in the field of microwave devices and to have consistent supply of pulsed magnetrons for the Indian accelerator programme. CAT initiated development of 2 MW S-Band pulsed magnetrons in collaboration with CEERI, Pilani. The design, development and testing of the microwave test facilities for ageing. conditioning and performance testing of Indian magnetrons, was successfully done by CAT indigenously. After the rigorous testing. the test facility was shifted, installed and commissioned at CEERI, Pilani by CAT. Over a period of 10 years, nine prototypes were aged and tested, two magnetrons were life tested and five magnetrons under production programme have been successfully conditioned and tested. Testing of more numbers is underway. The system details. commissioning aspects are discussed, results are shown. (author)

Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

DEFF Research Database (Denmark)

Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

2016-01-01

Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

Electron relaxation properties of Ar magnetron plasmas

Science.gov (United States)

Xinjing, CAI; Xinxin, WANG; Xiaobing, ZOU

2018-03-01

An understanding of electron relaxation properties in plasmas is of importance in the application of magnetrons. An improved multi-term approximation of the Boltzmann equation is employed to study electron transport and relaxation properties in plasmas. Elastic, inelastic and nonconservative collisions between electrons and neutral particles are considered. The expressions for the transport coefficients are obtained using the expansion coefficients and the collision operator term. Numerical solutions of the matrix equations for the expansion coefficients are also investigated. Benchmark calculations of the Reid model are presented to demonstrate the accuracy of the improved multi-term approximation. It is shown that the two-term approximation is generally not accurate enough and the magnetic fields can reduce the anisotropy of the velocity distribution function. The electron relaxation properties of Ar plasmas in magnetrons for various magnetic fields are studied. It is demonstrated that the energy parameters change more slowly than the momentum parameters.

A Compact, Pi-Mode Extraction Scheme for the Axial B-Field Recirculating Planar Magnetron

Science.gov (United States)

2012-07-23

Figure 4). Thus, in a planar magnetron, the minimum phase velocity, vph , to stay above cutoff in the rectangular waveguide is ℎ = ...as magnetrons, electrons must be accelerated such that they are in synchronism with the phase velocity, vph , of the electromagnetic wave for an

Physics and phenomena in pulsed magnetrons: an overview

International Nuclear Information System (INIS)

Bradley, J W; Welzel, T

2009-01-01

This paper reviews the contribution made to the observation and understanding of the basic physical processes occurring in an important type of magnetized low-pressure plasma discharge, the pulsed magnetron. In industry, these plasma sources are operated typically in reactive mode where a cathode is sputtered in the presence of both chemically reactive and noble gases typically with the power modulated in the mid-frequency (5-350 kHz) range. In this review, we concentrate mostly, however, on physics-based studies carried out on magnetron systems operated in argon. This simplifies the physical-chemical processes occurring and makes interpretation of the observations somewhat easier. Since their first recorded use in 1993 there have been more than 300 peer-reviewed paper publications concerned with pulsed magnetrons, dealing wholly or in part with fundamental observations and basic studies. The fundamentals of these plasmas and the relationship between the plasma parameters and thin film quality regularly have whole sessions at international conferences devoted to them; however, since many different types of magnetron geometries have been used worldwide with different operating parameters the important results are often difficult to tease out. For example, we find the detailed observations of the plasma parameter (particle density and temperature) evolution from experiment to experiment are at best difficult to compare and at worst contradictory. We review in turn five major areas of studies which are addressed in the literature and try to draw out the major results. These areas are: fast electron generation, bulk plasma heating, short and long-term plasma parameter rise and decay rates, plasma potential modulation and transient phenomena. The influence of these phenomena on the ion energy and ion energy flux at the substrate is discussed. This review, although not exhaustive, will serve as a useful guide for more in-depth investigations using the referenced

First demonstration and performance of an injection locked continuous wave magnetron to phase control a superconducting cavity

Directory of Open Access Journals (Sweden)

A. C. Dexter

2011-03-01

Full Text Available The applications of magnetrons to high power proton and cw electron linacs are discussed. An experiment is described where a 2.45 GHz magnetron has been used to drive a single cell superconducting cavity. With the magnetron injection locked, a modest phase control accuracy of 0.95° rms has been demonstrated. Factors limiting performance have been identified.

Characterization and Optimization of the Magnetron Directional Amplifier

National Research Council Canada - National Science Library

Hatfield, Michael

1999-01-01

.... A conventional microwave oven magnetron may be converted into a two-port amplifier capable of delivering over 30 dB of gain, while remaining phase-locked to the input signal over a wide frequency range...

The Development and Application of the Magnetron,

Science.gov (United States)

1982-03-31

of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

Energy Technology Data Exchange (ETDEWEB)

Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

2018-04-01

State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signal on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.

Solid-state pulse modulator for a 1.7-MW X-band magnetron

International Nuclear Information System (INIS)

Choi, Jaegu; Shin, Yongmoon; Choi, Youngwook; Kim, Kwanho

2014-01-01

Medical linear accelerators (LINAC) for cancer treatment require pulse modulators to generate high-power pulses with a fast rise time, flat top and short duration to drive high-power magnetrons. Solid-state pulse modulators (SSPM) for medical LINACs that use high power semiconductor switches with high repetition rates, high stability and long lifetimes have been introduced to replace conventional linear-type pulse generators that use gaseous discharge switches. In this paper, the performance of a developed SSPM, which mainly consists of a capacitor charger, an insulated-gate bipolar transistor (IGBT) - capacitor stack and a pulse transformer, is evaluated with a dummy load and an X-band magnetron load. A theoretical analysis of the pulse transformer, which is a critical element of the SSPM, is carried out. The output pulse has a fast rise time and low droop, such that the modulator can drive the X-band magnetron.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

Science.gov (United States)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

International Nuclear Information System (INIS)

Anders, Andre; Yushkov, Georgy Yu.

2009-01-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

Energy Technology Data Exchange (ETDEWEB)

Wang, Haipeng [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2015-09-01

As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

Computer analysis, design and construction of the BNL Mk V magnetron

International Nuclear Information System (INIS)

McKenzie-Wilson, R.B.; Kovarik, V.J.

1981-01-01

As part of a program to develop a high energy neutral beam injector for fusion reactor applications, the BNL Neutral Beam Group is studying, among other options, a surface plasma source of the magnetron type. This source has been developed to the point at which a large compact model, known as the Mk V magnetron, has been designed and constructed. The source is designed to operate in the steady state mode and to produce 1-2A of H - (D - ) ions at 25 kV. Under these conditions, 18 KW of heat are removed from the source by the cooling system

Magnetic field effects on coating deposition rate and surface morphology coatings using magnetron sputtering

International Nuclear Information System (INIS)

Yang, Yu-Sen; Huang, Wesley

2010-01-01

Chromium nitride coatings exhibit superior hardness, excellent wear and oxidation resistance, and are widely applied in the die and mold industries. The aim of this study was to investigate magnetic field effects on the deposition rate and surface morphology of chromium nitride coatings deposited by magnetron sputtering. Four types of magnetic field configurations, including the magnetron sputtering system, SNSN, SNNN, and intermediate magnetron modification, are discussed in this paper. SKD11 cold work die steel and a silicon (100) chip were used as substrates in the chromium nitride depositions. The process parameters, such as target current, substrate bias, and the distance between the substrate and target, are at fixed conditions, except for the magnetic arrangement type. The experimental results showed that the deposition rates of the four types of magnetic field configurations were 1.06, 1.38, 1.67 and 1.26 µm h −1 , respectively. In these cases, the SNNN type performs more than 58% faster than the unbalanced magnetron configuration does for the deposition rate. The surface morphology of chromium nitride films was also examined by SEM and is discussed in this paper

Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

2016-12-30

Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

SERS spectra of pyridine adsorbed on nickel film prepared by magnetron sputtering

Science.gov (United States)

Li, Daoyong; Ouyang, Yu; Chen, Li; Cao, Weiran; Shi, Shaohua

2011-02-01

As a repeating well and cheaper enhancement substrate, the nickel film was fabricated with magnetron sputtering coating instrument. Surface enhanced Raman spectra (SERS) of pyridine adsorbed on this nickel film are compared with the experimental values of gaseous pyridine, the theoretical value of pyridine solution listed in other literatures and our method is better than electro-chemical etching electrode method for large scale preparation. The enhancement factor of the nickel film is calculated and the result indicates that magnetron sputtering coating technology is feasible for obtaining good SERS active surface.

Operational experience with the BNL magnetron H- source

International Nuclear Information System (INIS)

Witkover, R.L.

1983-01-01

A magnetron H - source with a grooved cathode has been in operation at the BNL Linac for over 18 months. The source has run at 5 pps with a 600 μsec pulse width for periods as long as 5 months. Its development and performance will be discussed

Multi-sided metallization of textile fibres by using magnetron system with grounded cathode

Directory of Open Access Journals (Sweden)

Chodun Rafał

2017-10-01

Full Text Available The synthesis of coatings on textiles fibers enables functionalization of their properties e.g.: changing the reaction on IR radiation. In our experiment, a magnetron with a grounded cathode and positively biased anode was used as a source of plasma. A ring anode was positioned at 8 cm distance from the cathode. Samples of glass and cotton textile were placed at the plane of the anode. Ti and TiN coatings were deposited by sputtering of titanium target in Ar or Ar+ N2 atmosphere. SEM studies showed that, using the magnetron system described above, the textile fibers were covered by the 2 μm to 3 μm thick coatings. Unexpectedly, the coatings were deposited at both sides of the samples: the front side was exposed to glow discharge plasma and the backside was completely shaded from the plasma. IR optical investigation exhibited significant change in reflectance and transmittance of the coated textiles. The using of standard magnetron system (grounded anode and cathode at negative potential resulted in a coating deposition at the textile side exposed to the plasma action only. We believe that the multi-sided deposition of coatings observed during the process run with magnetron with grounded cathode is a result of an ambipolar diffusion mechanism in the anodic potential drop region.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

TOPICAL REVIEW: Physics and phenomena in pulsed magnetrons: an overview

Science.gov (United States)

Bradley, J. W.; Welzel, T.

2009-05-01

This paper reviews the contribution made to the observation and understanding of the basic physical processes occurring in an important type of magnetized low-pressure plasma discharge, the pulsed magnetron. In industry, these plasma sources are operated typically in reactive mode where a cathode is sputtered in the presence of both chemically reactive and noble gases typically with the power modulated in the mid-frequency (5-350 kHz) range. In this review, we concentrate mostly, however, on physics-based studies carried out on magnetron systems operated in argon. This simplifies the physical-chemical processes occurring and makes interpretation of the observations somewhat easier. Since their first recorded use in 1993 there have been more than 300 peer-reviewed paper publications concerned with pulsed magnetrons, dealing wholly or in part with fundamental observations and basic studies. The fundamentals of these plasmas and the relationship between the plasma parameters and thin film quality regularly have whole sessions at international conferences devoted to them; however, since many different types of magnetron geometries have been used worldwide with different operating parameters the important results are often difficult to tease out. For example, we find the detailed observations of the plasma parameter (particle density and temperature) evolution from experiment to experiment are at best difficult to compare and at worst contradictory. We review in turn five major areas of studies which are addressed in the literature and try to draw out the major results. These areas are: fast electron generation, bulk plasma heating, short and long-term plasma parameter rise and decay rates, plasma potential modulation and transient phenomena. The influence of these phenomena on the ion energy and ion energy flux at the substrate is discussed. This review, although not exhaustive, will serve as a useful guide for more in-depth investigations using the referenced

Development of a Magnetron Resonance Frequency Auto Tuning System for Medical Xband [9300 MHz] RF Linear Accelerator

Energy Technology Data Exchange (ETDEWEB)

Cha, Sung Su; Lee, Byung Cheol [University of Science and Technology, Daejeon (Korea, Republic of); Kim, Yujong; Park, Hyung Dal; Lee, Byeong-No; Joo, Youngwoo; Cha, Hyungki; Lee, Soo Min; Song, Ki Baek [KAERI, Daejeon (Korea, Republic of); Lee, Seung Hyun [Sungkyunkwan University, Suwon (Korea, Republic of)

2015-05-15

The total components of the accelerator are the magnetron, electron gun, accelerating structure, a set of solenoid magnets, four sets of steering coils, a modulator, and a circulator. One of the accelerator components of the accelerating structure is made of oxygen-free high-conductivity copper (OFHC), and its volume is changed according to the ambient temperature. As the volume changes, the resonant frequency of the accelerating structure is changed. Accordingly, the resonance frequency is mismatched between the source of the magnetron and the accelerating structure. An automatic frequency tuning system is automatically matched with the resonant frequency of the magnetron and accelerating structure, which allows a high output power and reliable accelerator operation. An automatic frequency tuning system is composed of a step motor control part for correcting the frequency of the source and power measuring parts, i.e., the forward and reflected power between the magnetron and accelerating structure. In this paper, the design, fabrication, and RF power test of the automatic frequency tuning system for the X-band linac are presented. A frequency tuning system was developed to overcome an unstable accelerator operation owing to the frequency mismatch between the magnetron and accelerating structure. The frequency measurement accuracy is 100 kHz and 0.72 degree per pulse.

Reconstruction of the static magnetic field of a magnetron

Science.gov (United States)

Krüger, Dennis; Köhn, Kevin; Gallian, Sara; Brinkmann, Ralf Peter

2018-06-01

The simulation of magnetron discharges requires a quantitatively correct mathematical model of the magnetic field structure. This study presents a method to construct such a model on the basis of a spatially restricted set of experimental data and a plausible a priori assumption on the magnetic field configuration. The example in focus is that of a planar circular magnetron. The experimental data are Hall probe measurements of the magnetic flux density in an accessible region above the magnetron plane [P. D. Machura et al., Plasma Sources Sci. Technol. 23, 065043 (2014)]. The a priori assumption reflects the actual design of the device, and it takes the magnetic field emerging from a center magnet of strength m C and vertical position d C and a ring magnet of strength m R , vertical position d R , and radius R. An analytical representation of the assumed field configuration can be formulated in terms of generalized hypergeometric functions. Fitting the ansatz to the experimental data with a least square method results in a fully specified analytical field model that agrees well with the data inside the accessible region and, moreover, is physically plausible in the regions outside of it. The outcome proves superior to the result of an alternative approach which starts from a multimode solution of the vacuum field problem formulated in terms of polar Bessel functions and vertical exponentials. As a first application of the obtained field model, typical electron and ion Larmor radii and the gradient and curvature drift velocities of the electron guiding center are calculated.

Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

2014-11-24

Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

Properties of H- and D- beams from magnetron and Penning sources

International Nuclear Information System (INIS)

Sluyters, T.; Kovarik, V.

1979-01-01

The quality of negative hydrogen isotope beams are evaluated after extraction from magnetron and Penning sources. The general conclusions of these measurements are that: (a) the beam quality from these plasma sources are adequate for the transport of high current negative ion beams in bending magnets; (b) there is evidence of practically complete space charge neutralization in the drift space beyond the extractor; (c) the beam performance from the Penning source appears to be better compared with the magnetron source; and (d) it is likely that the high electric field gradient and a concave ion emission boundary are responsible for a beam cross-over near the anode aperture, which causes beam divergence practically independent of the extraction geometry

High temperature superconducting films by rf magnetron sputtering

International Nuclear Information System (INIS)

Kadin, A.M.; Ballentine, P.H.

1989-01-01

The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

Hybrid plasma system for magnetron deposition of coatings with ion assistance

International Nuclear Information System (INIS)

Vavilin, K V; Kralkina, E A; Nekludova, P A; Petrov, A. K; Nikonov, A M; Pavlov, V B; Airapetov, A A; Odinokov, V V; Pavlov, G Ya; Sologub, V A

2016-01-01

The results of the study of the plasma hybrid system based on the combined magnetron discharge and high-frequency inductive discharge located in the external magnetic field is presented. Magnetron discharge provides the generation of atoms and ions of the target materials while the flow of accelerated ions used for the ion assistance is provided by the RF inductive discharge. An external magnetic field is used to optimize the power input to the discharge, to increase the ion current density in the realm of substrate and to enhance the area of uniform plasma. The joint operation of magnetron and RF inductive discharge leads to a substantial increase (not equal to the sum of the parameters obtained under separate operation of two hybrid system channels) of the ion current density and intensity of sputtered material spectral lines radiation. Optimal mode of the hybrid plasma system operation provides uniform ion current density on the diameter of at least 150mm at 0.7PA argon pressure. The optimal values of the magnetic fields in the region of the substrate location lie in the range 2-8 mTl, while in the region of the RF input power unit lie in the range 0.5-25 mTl. (paper)

Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

CERN Document Server

Ellmer, K; Weiss, V; Rossner, H

2001-01-01

A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering

International Nuclear Information System (INIS)

Rogozin, A.I.; Vinnichenko, M.V.; Kolitsch, A.; Moeller, W.

2004-01-01

ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence of base pressure, Ar/O 2 ratio and magnetron pulse duration on the film composition, structure, electrical, and optical properties has been investigated. The deposition rate is proportional to the magnetron operation power at changing pulse duration and constant Ar and O 2 flows. At enhanced O 2 flows an onset of the magnetron target oxidation is discussed as a reason for the decrease of the deposition rate. The presence of water vapor in the residual gas is determined to be a reason for deterioration of resistivity and optical transmittance observed for ITO films produced at a base pressures higher than 5·10 -4 Pa. It is demonstrated that spectroscopic ellipsometry can be used as a noncontact tool to monitor the resistivity of ITO films

Chromium-nanodiamond coatings obtained by magnetron sputtering and their tribological properties

Science.gov (United States)

Atamanov, M. V.; Khrushchov, M. M.; Marchenko, E. A.; Shevchenko, N. V.; Levin, I. S.; Petrzhik, M. I.; Miroshnichenko, V. I.; Relianu, M. D.

2017-07-01

Peculiarities of structure, chemical and phase composition, micromechanical and tribological properties of chromium-based coatings obtained by magnetron-sputtering of composite and/or compacted chromium-nanodiamond targets have been investigated.

Corrosion of thin, magnetron sputtered Nb_2O_5 films

International Nuclear Information System (INIS)

Pillis, Marina Fuser; Geribola, Guilherme Altomari; Scheidt, Guilherme; Gonçalves de Araújo, Edval; Lopes de Oliveira, Mara Cristina; Antunes, Renato Altobelli

2016-01-01

Highlights: • Niobium oxide based films were obtained by DC magnetron sputtering. • Different deposition times were tested. • The best corrosion resistance was obtained for the Nb_2O_5 film produced at 15′. • Film porosity determines the corrosion resistance. - Abstract: Niobium oxide based thin films were deposited on AISI 316 stainless steel substrates using reactive DC magnetron sputtering. Structure, composition and corrosion resistance of the niobium oxide films were studied. The corrosion behavior of the specimens was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The concentration of niobium and oxygen in the films was obtained by Rutherford backscattering spectroscopy (RBS). The film structure was analyzed by X-ray diffractometry. The corrosion resistance of the substrate was improved by the Nb_2O_5 layers. The best protective performance was achieved for the deposition time of 15 min.

Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

Science.gov (United States)

Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

2016-09-01

Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

Directory of Open Access Journals (Sweden)

Arroyo-Hernández María

2011-01-01

Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

NARCIS (Netherlands)

Hattum, E.D. van

2007-01-01

RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

Directory of Open Access Journals (Sweden)

Bogdanov R.V.

2015-03-01

Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

Magnetron co-sputtering system for coating ICF targets

International Nuclear Information System (INIS)

Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

1981-01-01

Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres

Special traits of the millimeter wave relativistic magnetron

International Nuclear Information System (INIS)

Berdin, S.A.; Chizhov, K.V.; Gadetski, N.P.; Korenev, V.G.; Lebedenko, A.N.; Marchenko, M.I.; Magda, I.I.; Melezhik, O.G.; Sinitsin, V.G.; Soshenko, V.A.

2014-01-01

A 8 mm band relativistic magnetron is investigated experimentally and by means of numerical simulation. The physical effects are analyzed which influence negatively the r.f. generation. The processes capable of reducing effectiveness of the generation and duration of the generated pulse include forward and backward axial flows of electrons, and intense electric fields - the generated microwaves and the fields owing to the space charge

Recent operation of the FNAL magnetron H- ion source

Science.gov (United States)

Karns, P. R.; Bollinger, D. S.; Sosa, A.

2017-08-01

This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ˜18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

Status and prospects of a compact FIR FEL driven by a magnetron-based microtron

International Nuclear Information System (INIS)

Jeong, Young Uk; Kazakevitch, Grigori M.; Lee, Byung Cheol; Kim, Sun Kook; Cho, Sung Oh; Gavrilov, Nicolai G.; Lee, Jongmin

2002-01-01

A magnetron-based microtron as a driver of FIR FEL has several prominent advantages in cost, size, beam quality and operation convenience. However, it has some disadvantages due to the instability of the RF frequency and a low current. In order to overcome these disadvantages, the frequency stability of the magnetron was improved, and the interaction between the electron beam and the FIR radiation was enhanced by using a high-performance undulator and a low-loss waveguide-mode optical resonator. The FEL is now under upgrade in order to extend the wavelength range to cover 90-300 μm, which can be done by increasing the energy range of electron beam to 4.3-7 MeV. In this paper, we report the results of investigations on output characteristics of the FEL depending on cavity detuning, electron beam matching, and RF instability. Based on the results, we discuss the prospects of wide-band FIR FELs driven by magnetron-based microtrons as potent sources of radiation for scientific applications

Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

Science.gov (United States)

Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

2016-02-01

Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

Czech Academy of Sciences Publication Activity Database

Martines, E.; Zuin, M.; Cavazzana, R.; Adámek, Jiří; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.

2014-01-01

Roč. 21, č. 10 (2014), s. 102309-102309 ISSN 1070-664X Institutional support: RVO:61389021 Keywords : Drift waves * Magnetron sputtering plasma * Spatiotemporal synchronization Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014 http://dx.doi.org/10.1063/1.4898693

Experimental study on an S-band near-field microwave magnetron power transmission system on hundred-watt level

Science.gov (United States)

Zhang, Biao; Jiang, Wan; Yang, Yang; Yu, Chengyang; Huang, Kama; Liu, Changjun

2015-11-01

A multi-magnetron microwave source, a metamaterial transmitting antenna, and a large power rectenna array are presented to build a near-field 2.45 GHz microwave power transmission system. The square 1 m2 rectenna array consists of sixteen rectennas with 2048 Schottky diodes for large power microwave rectifying. It receives microwave power and converts them into DC power. The design, structure, and measured performance of a unit rectenna as well as the entail rectenna array are presented in detail. The multi-magnetron microwave power source switches between half and full output power levels, i.e. the half-wave and full-wave modes. The transmission antenna is formed by a double-layer metallic hole array, which is applied to combine the output power of each magnetron. The rectenna array DC output power reaches 67.3 W on a 1.2 Ω DC load at a distance of 5.5 m from the transmission antenna. DC output power is affected by the distance, DC load, and the mode of microwave power source. It shows that conventional low power Schottky diodes can be applied to a microwave power transmission system with simple magnetrons to realise large power microwave rectifying.

Magnetron based high energy S-band linac system

International Nuclear Information System (INIS)

Tiwari, T.; Krishnan, R.; Phatangare, Manoj

2012-01-01

This paper deals with the study of magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. The energy and dose are two important parameters of linac system which depend on input power of microwave source and length of linac tube. Here the author has studied how these parameters can be improved for side coupled standing wave S-band linac system

High power pulsed magnetron sputtering: A method to increase deposition rate

International Nuclear Information System (INIS)

Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

2015-01-01

High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

Computer investigations of the influences of magnets for magnetron-sputtering

International Nuclear Information System (INIS)

Knotek, O.; Loeffler, F.; Schnaut, U.; Guan, W.

1993-01-01

For a long time PVD (Physical-Vapour-Deposition) technology has been applied in various modern technical fields, owing to the wide range of possible coating materials whose potential is virtually unlimited. Besides electronic, optical and decorative applications for PVD films, hard films, in particular, have been widely applied for tool coatings which play important roles for the resistance against wear and corrosion. The MSIP (Magnetron-Sputter-Ion-Plating) coating process is one of the PVD-processes, providing 1) relatively high deposition rates, 2) large deposition areas, and 3) low substrate heating. The magnetron behind the target influences the distribution of the electrons moving in the plasma and the space between the cathode and anode, thus the distribution of the ions impinging on the surface of the target. Since the electrons are distributed unevenly in front of the target, the working gas atoms are therefore unevenly ionized in the plasma and the ions also unevenly bombard the target surface and the erosion of the target surface is uneven. Therefore the investigations of the magnetic field in the MSIP are very important for the optimization of the deposition process and the usage of the target. Generally, the accurate calculations or measurements of the direction and strength of the magnetic field (magnetic induction or magnetic flux density vector B) is difficult in comparison to measurements of the electrical field, because vector B is a vector with varying direction and magnitude. In this paper, it is shown that a magnetic field of a cylindrical magnetron in MSIP-equipment can be quickly simulated through a simple model and the distribution of the field is discussed. (orig.)

Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

International Nuclear Information System (INIS)

Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

2016-01-01

Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

Blue Diode Laser Absorption Spectroscopy of Pulsed Magnetron Discharge

Czech Academy of Sciences Publication Activity Database

Olejníček, Jiří; Do, H.T.; Hubička, Zdeněk; Hippler, R.; Jastrabík, Lubomír

2006-01-01

Roč. 45, 10B (2006), s. 8090-8094 ISSN 0021-4922 R&D Projects: GA AV ČR 1QS100100563; GA ČR GA202/05/2242 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : laser absorption spectroscopy * pulsed magnetron * sputtering parameters Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.222, year: 2006

Analysis of conditions for magnetron discharge initiation at vacuum camera testing

International Nuclear Information System (INIS)

Tzeneva, Raina; Dineff, Peter; Darjanova, Denitza

2002-01-01

Models of electric field distribution for two typical cases of vacuum camera internal pressure control are investigated. New relations between the maximum magnetron discharge current value I max and the maximum electric field strength radial component value E τ max are established. (Author)

Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

International Nuclear Information System (INIS)

Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

2013-01-01

Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

Energy Technology Data Exchange (ETDEWEB)

Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Philipp, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

2015-09-15

A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

Estimation of Sputtering Damages on a Magnetron H- Ion Source Induced by Cs+ and H+ Ions

CERN Document Server

Pereira, H; Alessi, J; Kalvas, t

2013-01-01

An H− ion source is being developed for CERN’s Linac4 accelerator. A beam current requirement of 80 mA and a reliability above 99% during 1 year with 3 month uninterrupted operation periods are mandatory. To design a low-maintenance long life-time source, it is important to investigate and understand the wear mechanisms. A cesiated plasma discharge ion source, such as the BNL magnetron source, is a good candidate for the Linac4 ion source. However, in the magnetron source operated at BNL, the removal of material from the molybdenum cathode and the stainless steel anode cover plate surfaces is visible after extended operation periods. The observed sputtering traces are shown to result from cesium vapors and hydrogen gas ionized in the extraction region and subsequently accelerated by the extraction field. This paper presents a quantitative estimate of the ionization of cesium and hydrogen by the electron and H− beams in the extraction region of BNL’s magnetron ion source. The respective contributions o...

Plasma properties of RF magnetron sputtering system using Zn target

Energy Technology Data Exchange (ETDEWEB)

Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

2012-06-29

In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

Indium zinc oxide films deposited on PET by LF magnetron sputtering

International Nuclear Information System (INIS)

Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

2007-01-01

Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

Comparative study of niobium nitride coatings deposited by unbalanced and balanced magnetron sputtering

International Nuclear Information System (INIS)

Olaya, J.J.; Rodil, S.E.; Muhl, S.

2008-01-01

Niobium nitride (NbN) coatings have many interesting properties such as chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature between 16 and 17 K. For this reason, these compounds have many potential thin film applications. In this work we compare the properties of NbN x films deposited using well-characterized balanced and unbalanced magnetron sputtering systems. Samples of NbN were deposited in the two systems under almost identical deposition conditions, that is, the same substrate temperature, plasma power, gas pressure, substrate to target distance and Ar/N 2 ratio. Prior to the film preparation both the magnetic field geometry and the characteristics of the plasma were determined. The microstructure and composition of the deposits were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The corrosion resistance and the micro-abrasion wear resistance were measured by anodic polarization potentiodynamic studies and by ball cratering, respectively. The NbN films grown using the highly unbalanced magnetron configuration had a preferential (111) crystal orientation and a composite hardness of up to 2400 HV 0.025 . While the films deposited using the balanced magnetron had a mixed crystalline orientation and a hardness of 2000 HV 0.025 . The results demonstrate the strong effect of magnetic field configuration on the ion bombardment, and the resultant coating characteristics

Comparative study of niobium nitride coatings deposited by unbalanced and balanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Bogota Colombia (Colombia); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico)], E-mail: muhl@servidor.unam.mx

2008-10-01

Niobium nitride (NbN) coatings have many interesting properties such as chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature between 16 and 17 K. For this reason, these compounds have many potential thin film applications. In this work we compare the properties of NbN{sub x} films deposited using well-characterized balanced and unbalanced magnetron sputtering systems. Samples of NbN were deposited in the two systems under almost identical deposition conditions, that is, the same substrate temperature, plasma power, gas pressure, substrate to target distance and Ar/N{sub 2} ratio. Prior to the film preparation both the magnetic field geometry and the characteristics of the plasma were determined. The microstructure and composition of the deposits were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The corrosion resistance and the micro-abrasion wear resistance were measured by anodic polarization potentiodynamic studies and by ball cratering, respectively. The NbN films grown using the highly unbalanced magnetron configuration had a preferential (111) crystal orientation and a composite hardness of up to 2400 HV{sub 0.025}. While the films deposited using the balanced magnetron had a mixed crystalline orientation and a hardness of 2000 HV{sub 0.025}. The results demonstrate the strong effect of magnetic field configuration on the ion bombardment, and the resultant coating characteristics.

[Effects of magnetron sputtered ZrN on the bonding strength of titanium porcelain].

Science.gov (United States)

Zhou, Shu; Zhang, Wen-yan; Guang, Han-bing; Xia, Yang; Zhang, Fei-min

2009-04-01

To investigate the effect of magnetron sputtered ZrN on the bonding strength between a low-fusing porcelain (Ti/Vita titankeramik system) and commercially pure cast titanium. Sixteen specimens were randomly assigned to test group and control group (n=8). The control group received no surface treated. Magnetron sputtered ZrN film was deposited on the surface of specimens in the test group. Then the sixteen titanium-porcelain specimens were prepared in a rectangular shape and went through three-point bending test on a universal test machine. The bond strength of Ti/porcelain was recorded. The phase composition of the specimens was analyzed using X-ray diffraction (XRD). The interface at titanium and porcelain and the titanium surface after debonding were observed with a scanning electron microscopy (SEM) and analyzed using energy depressive spectrum (EDS). New phase of ZrN was found with XRD in the test group. Statistical analysis showed higher bond strength following ZrN surface treatment in the test group [(45.991+/-0.648) MPa] than that in the control group [(29.483+/-1.007) MPa] (P=0.000). Bonded ceramic could be observed in test group, the amount of bonded ceramic was more than that in the control group. No obvious bonded ceramic in control group was found. Magnetron sputtered ZrN can improve bond strength of Ti/Vita titankeramik system significantly.

Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

International Nuclear Information System (INIS)

Matyash, K; Froehlich, M; Kersten, H; Thieme, G; Schneider, R; Hannemann, M; Hippler, R

2004-01-01

During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed

Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

Energy Technology Data Exchange (ETDEWEB)

Matyash, K [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Froehlich, M [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Kersten, H [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Thieme, G [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Schneider, R [Max-Planck-Institut fuer Plasmaphysik, Teilinstitut Greifswald, Wendelsteinstrasse 1, 17489 Greifswald (Germany); Hannemann, M [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Hippler, R [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany)

2004-10-07

During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed.

Increase in the accuracy of approximating the profile of the erosion zone in planar magnetrons

Science.gov (United States)

Rogov, A. V.; Kapustin, Yu. V.

2017-09-01

It has been shown that the use of the survival function of the Weibull distribution shifted along the ordinate axis allows one to increase the accuracy of the approximation of the normalized profile of an erosion zone in the area from the axis to the maximum sputtering region compared with the previously suggested distribution function of the extremum values. The survival function of the Weibull distribution is used in the area from the maximum to the outer boundary of an erosion zone. The major advantage of using the new approximation is observed for magnetrons with a large central nonsputtered spot and for magnetrons with substantial sputtering in the paraxial zone.

Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

Czech Academy of Sciences Publication Activity Database

Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

2004-01-01

Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

Implementation of Design Changes Towards a More Reliable, Hands-off Magnetron Ion Source

Energy Technology Data Exchange (ETDEWEB)

Sosa, A. [Fermilab; Bollinger, D. S. [Fermilab; Karns, P. R. [Fermilab; Tan, C. Y. [Fermilab

2017-12-07

As the main H- ion source for the accelerator complex, magnetron ion sources have been used at Fermilab since the 1970’s. At the offline test stand, new R&D is carried out to develop and upgrade the present magnetron-type sources of H- ions of up to 80 mA and 35 keV beam energy in the context of the Proton Improvement Plan. The aim of this plan is to provide high-power proton beams for the experiments at FNAL. In order to reduce the amount of tuning and monitoring of these ion sources, a new electronic system consisting of a current-regulated arc discharge modulator allow the ion source to run at a constant arc current for improved beam output and operation. A solenoid-type gas valve feeds H2 gas into the source precisely and independently of ambient temperature. This summary will cover several studies and design changes that have been tested and will eventually be implemented on the operational magnetron sources at Fermilab. Innovative results for this type of ion source include cathode geometries, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction, with the aim to improve source lifetime, stability, and reducing the amount of tuning needed. In this summary, I will highlight the advances made in ion sources at Fermilab and will outline the directions of the continuing R&D effort.

CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

KAUST Repository

Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Wu, Zhengtao; Qi, Zhengbing; Wang, Zhoucheng

2016-01-01

stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The Cr

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

Science.gov (United States)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Pd-catalysts for DFAFC prepared by magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Bieloshapka, Igor; Jiříček, Petr; Vorokhta, M.; Tomšík, Elena; Rednyk, A.; Perekrestov, R.; Jurek, Karel; Ukraintsev, Egor; Hruška, Karel; Romanyuk, Olexandr; Lesiak, B.

2017-01-01

Roč. 419, Oct (2017), s. 838-846 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : Pd catalyst * formic acid fuel cell * magnetron sputtering * DFAFC * surface morphology Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (UMCH-V) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (UMCH-V) Impact factor: 3.387, year: 2016

Magnetron sputtering system with an annual discharge zone and two cathode modules

International Nuclear Information System (INIS)

Savich, V. A.; Yasyunas, A. A.; Kovrigo, V. M.; Kotov, D. A.; Shiripov, V. Ya.

2013-01-01

In this article, general discharge characteristics of a cylindrical magnetron sputtering system with an annual sputtering zone and a high target usage coefficient designed for transparent conducting coatings are shown. Two coupled DC-cathodes are used to improve coating uniformity. Radial sputtered material fluxes are being created. The engineered magnetic system is extremely balanced (G-factor is much higher than 2) and thus provides maximal effective operating power higher than 6 kW. The effectiveness of a magnetic trap results in a fast work cycle (less than 1.5 min) and a high target material usage coefficient (higher than 40%). A multipole magnetic field with null magnetic flux density zones lower target’s surface is being created. There is an influence between cathode modules despite mutual magnetic isolation, so magnetic conductors-shunts are used to weaken it. The magnetron can be used to sputter both metals and conducting ceramics (including ITO). (authors)

Contribution to crystallographical and mechanical analysis of molybdenum coatings prepared by magnetron cathode sputtering

International Nuclear Information System (INIS)

Bosland, P.

1989-07-01

Molybdenum coatings with different compression stresses are obtained by magnetron cathode sputtering by varying negative voltage applied to the substrate during deposition. Stress evolution, crystal texture and argon content are studied [fr

RF magnetron sputtering and evaporation of polyisobutylene and low density polyethylene

Czech Academy of Sciences Publication Activity Database

Kousal, J.; Hanuš, J.; Choukourov, A.; Hlídek, P.; Biederman, H.; Slavinská, D.; Zemek, Josef

2005-01-01

Roč. 200, 1-4 (2005), s. 472-475 ISSN 0257-8972 R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) ME 553 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetron * radio frequency * sputtering * polyethylene * polyisobutylene Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.646, year: 2005

Advanced TiC/a-C : H nanocomposite coatings deposited by magnetron sputtering

NARCIS (Netherlands)

Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

2006-01-01

TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing

[Effect of niobium nitride on the bonding strength of titanium porcelain by magnetron sputtering].

Science.gov (United States)

Wang, Shu-shu; Zhang, La-bao; Guang, Han-bing; Zhou, Shu; Zhang, Fei-min

2010-05-01

To investigate the effect of magnetron sputtered niobium nitride (NbN) on the bonding strength of commercially pure cast titanium (Ti) and low-fusing porcelain (Ti/Vita titankeramik system). Sixty Ti specimens were randomly divided into four groups, group T1, T2, T3 and T4. All specimens of group T1 and T2 were first treated with 120 microm blasted Al2O3 particles, and then only specimens of group T2 were treated with magnetron sputtered NbN film. All specimens of group T3 and T4 were first treated with magnetron sputtered NbN film and then only specimens of group T4 were treated with 120 microm blasted Al2O3 particles. The composition of the deposits were analyzed by X-ray diffraction (XRD). A universal testing machine was used to perform the three-point bending test to evaluate the bonding strength of Ti and porcelain. The microstructure of NbN, the interface of Ti-porcelain and the fractured Ti surface were observed with scanning electron microscopy (SEM) and energy depressive spectrum (EDS), and the results were compared. The XRD results showed that the NbN deposits were cubic crystalline phases. The bonding strength of Ti and porcelain in T1 to T4 group were (27.2+/-0.8), (43.1+/-0.6), (31.4+/-1.0) and (44.9+/-0.6) MPa. These results were analyzed by one-way analysis of variance and differences between groups were compared using least significant difference test. Significant inter-group differences were found among all groups (Pporcelain, while samples treated with both Al2O3 and NbN had better bond. EDS of Ti-porcelain interface showed oxidation occurred in T1, T2 and T3, but was well controlled in T4. Magnetron sputtered NbN can prevent Ti from being oxidized, and can improve the bonding strength of Ti/Vita titankeramik system. Al2O3 blast can also improve the bonding strength of Ti/Vita titankeramik system.

Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

International Nuclear Information System (INIS)

Horstmann, F.; Sittinger, V.; Szyszka, B.

2009-01-01

In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

The microstructure and properties of titanium dioxide films synthesized by unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Leng, Y.X.; Chen, J.Y.; Yang, P.; Sun, H.; Huang, N.

2007-01-01

In this work, titanium oxide films were deposited on Ti6Al4V and Si (1 0 0) by DC unbalanced magnetron sputtering method at different oxygen pressure. X-ray diffraction (XRD), microhardness tests, pin-on-disk wear experiments, surface contact angle tests and platelet adhesion investigation were conducted to evaluate the properties of the films. The corrosion behavior of titanium dioxide films was characterized by potentiodynamic polarization. The results showed that titanium oxide films deposited by unbalance magnetron sputtering were compact and could obviously enhance microhardness, wear resistance of titanium alloy substrate. Potentiodynamic polarization curves showed that Ti-6Al-4V deposited with titanium dioxide films had lower dissolution currents than that of the uncoated one. The results of in vitro hemocompatibility analyses indicated that the blood compatibility of the titanium dioxide films with bandgap 3.2 eV have better blood compatibility

Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

Science.gov (United States)

Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

2018-04-01

Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

Heteroepitaxial Ge-on-Si by DC magnetron sputtering

Directory of Open Access Journals (Sweden)

Martin Steglich

2013-07-01

Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

Energy Technology Data Exchange (ETDEWEB)

El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

2015-01-01

We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

Composite Ag/C:H:N films prepared by planar magnetron deposition

Energy Technology Data Exchange (ETDEWEB)

Hlidek, P. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)], E-mail: hlidek@karlov.mff.cuni.cz; Hanus, J.; Biederman, H.; Slavinska, D.; Pesicka, J. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)

2008-05-30

Composite Ag/C:H:N films were deposited by means of an unbalanced magnetron operated in a gas mixture of nitrogen and n-hexane. Composition of the films was controlled by electric power delivered to the magnetron and by ratio of nitrogen and n-hexane in the working gas mixture. The films were characterized using transmission electron microscopy, by the absorption spectra in visible and near infrared regions and by Fourier transform infrared spectroscopy. Immediately after film deposition and without breaking vacuum (in situ) corresponding vibration infrared spectra were scanned and their evolution during ageing of the films was monitored. Wettability as determined from water contact angle was improved with raising nitrogen contents, i.e. with increasing the electric power and the ratio of nitrogen/n-hexane in the working gas mixture. The increased wettability is likely caused by presence of NH{sub x} groups in Ag/C:H:N films. The incorporation of nitrogen effectively prevents the formation of carboxylate groups on the silver inclusions surfaces during the aging in the open air. In addition, the oxidation mechanism of the polymer matrix is modified.

Preparation and Characterization of FC Films Coated on PET Substrates by RF Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Huang Mei-lin

2018-01-01

Full Text Available Fluorocarbon (FC films were prepared on polyethylene terephthalate (PET plates and PET fabrics respectively by a radiofrequency (RF magnetron sputtering technique using polytetrafluoroethylene (PTFE as a target. Scanning electron microscope and X-ray photoelectron spectroscopy were used to investigate the morphology, structure and composition of the obtained FC films. The hydrophobicity and uvioresistant properties of the FC film coated fabric were studied. The results show that the FC films were successfully deposited on the PET substrates by a RF magnetron sputtering. The deposited films are made up of four components -CF3, -CF2-, CF- and -C-. The proportions of the four components and surface morphologies of the deposited films vary with the sputtering conditions. Compared with the original fabric samples, the hydrophobicity of the FC film coated fabrics is quite good and improved significantly.

High-speed deposition of protective films of aluminium oxide by the method of reactive magnetron sputtering

International Nuclear Information System (INIS)

Bugaev, S.P.; Zakhrov, A.N.; Ladyzhenskii, O.P.; Sochugov, M.S.

2001-01-01

The high optical characteristics of aluminium films made them attractive for different functional and decorative applications. It is well-known that the corrosion resistance of alloying is determined by the presence of the oxide film on its surface, but on the aluminium films, deposited by vacuum methods, the resistance is extremely low resulting in the relatively rapid failure of the coating. At present, there is a large number of methods of depositing the films of aluminium oxide. In most cases, it is recommended to use reactive magnetron sputtering of an aluminium target in a magnetron spraying system (MSS) using direct current, on dispersion of the target of aluminium oxide in a high-frequency MSS

A novel DC Magnetron sputtering facility for space research and synchrotron radiation optics

DEFF Research Database (Denmark)

Hussain, A.M.; Christensen, Finn Erland; Pareschi, G.

1998-01-01

A new DC magnetron sputtering facility has been build up at the Danish Space Research Institute (DSRI), specially designed to enable uniform coatings of large area curved optics, such as Wolter-I mirror optics used in space telescopes and curved optics used in synchrotron radiation facilities...

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

International Nuclear Information System (INIS)

Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

2006-01-01

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

Test stand for magnetron H negative ion source at IPP-Nagoya

Energy Technology Data Exchange (ETDEWEB)

Okamura, H; Kuroda, T; Miyahara, A

1981-02-01

Test facilities for the development of magnetron H(-) ion source consists of the vacuum system, power supplies, diagnostic equipment, and their controlling electronics. Schematics are presented and relevant items described including sequence control, optical links, the charged pulse forming network, the extractor power supply, magnet power supply, temperature control of the cesium feeder, and the pulsed valve driver. Noise problems and diagnostics are also considered.

Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2014-12-28

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

DEFF Research Database (Denmark)

Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

2016-01-01

High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

2013-01-01

The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology of the c......The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...... sweep voltammetry, impedance measurements. The microstructure and surface morphology of the coating were similar irrespective of the nature of the substrate, while the photocatalytic behaviour was found to vary depending on the substrate type. In general the TiO2 coating on stainless steel was shown...

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

International Nuclear Information System (INIS)

Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

2016-01-01

Highlights: • a-C:Ti nanocomposite coatings were prepared on 316L stainless steel by using R.F. magnetron sputtering method. • Properties of the nanocomposite coatings were analyzed with respect to titanium content. • Corrosion resistance, biocompatibility and hydrophobicity of nanocomposite coating were enhanced with increasing titanium content. • Coating with 2.33 at.% titanium showed superior tribological properties compared to other coatings. - Abstract: Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp"2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

International Nuclear Information System (INIS)

Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

2007-01-01

A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

High power impulse magnetron sputtering and its applications

Science.gov (United States)

Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

2018-04-01

High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

Two-dimensional spatial survey of the plasma potential and electric field in a pulsed bipolar magnetron discharge

International Nuclear Information System (INIS)

Vetushka, A.; Karkari, S.K.; Bradley, J.W.

2004-01-01

Emissive and Langmuir probe techniques have been used to obtain two-dimensional (2D) spatial maps of the plasma potential V p , electric field E, and ion trajectories in a pulsed bipolar magnetron discharge. The magnetron was pulsed at a frequency of 100 kHz, with a 50% duty cycle and operated at an argon pressure of 0.74 Pa. The pulse wave form was characterized by three distinct phases: the 'overshoot', 'reverse', and 'on' phases. In the 'on' phase of the pulse, when the cathode voltage is driven to -670 V, the 2D spatial distribution of V p has a similar form to that in dc magnetron, with significant axial and radial electric fields in the bulk plasma, accelerating ions to the sheath edge above the cathode racetrack region. During the 'overshoot' phase (duration 200 ns), V p is raised to values greater than +330 V, more than 100 V above the cathode potential, with E pointing away from the target. In the 'reverse' phase V p has a value of +45 V at all measured positions, 2 V more positive than the target potential. In this phase there is no electric field present in the plasma. In the bulk of the plasma, the results from Langmuir probe and the emissive probe are in good agreement, however, in one particular region of the plasma outside the radius of the cathode, the emissive probe measurements are consistently more positive (up to 45 V in the 'on' time). This discrepancy is discussed in terms of the different frequency response of the probes and their perturbation of the plasma. A simple circuit model of the plasma-probe system has been proposed to explain our results. A brief discussion of the effect of the changing plasma potential distribution on the operation of the magnetron is given

Time-resolved investigation of an asymmetric bipolar pulsed magnetron deposition discharge: Influence of pressure

NARCIS (Netherlands)

Dunger, Th.; Welzel, Th.; Welzel, S.; Richter, F.

2005-01-01

A bipolar pulsed magnetron deposition discharge has been studied with pulse frequencies of 100 and 150 kHz, respectively. The discharge was operated in an argon/oxygen mixture at different total pressures with a circular magnesium target as cathode. Time-resolved Langmuir double probe measurements

Deposition of copper coatings in a magnetron with liquid target

Energy Technology Data Exchange (ETDEWEB)

Tumarkin, A. V., E-mail: sanyahrustal@mail.ru; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

2015-12-15

Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2009-11-22

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

Deposition rates of high power impulse magnetron sputtering: Physics and economics

International Nuclear Information System (INIS)

Anders, Andre

2010-01-01

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

Examination of the radiation of magnetron discharge in the process of spraying thin films

International Nuclear Information System (INIS)

Sokolov, V.F.; Sokolova, Yu.A.; Protasevich, A.A.

1999-01-01

In this work, we investigated the light radiation of the magnetron discharge in order to develop a method of spectral control and regulation of the process of deposition of thin films in UVN-25 industrial equipment used for metallising of superlarge integrated circuits and other components

RF Magnetron Sputtering Coating Of Hydroxyapatite On Alkali Solution Treated Titanate Nanorods

Directory of Open Access Journals (Sweden)

Lee K.

2015-06-01

Full Text Available Hydroxyapatite (HA is a material with outstanding biocompatibility. It is chemically similar to natural bone tissue, and has therefore been favored for use as a coating material for dental and orthopedic implants. In this study, RF magnetron sputtering was applied for HA coating. And Alkali treatment was performed in a 5 M NaOH solution at 60°C. The coated HA thin film was heat-treated at a range of temperatures from 300 to 600°C. The morphological characterization and crystal structures of the coated specimens were then obtained via FE-SEM, XRD, and FT-IR. The amorphous thin film obtained on hydrothermally treated nanorods transformed into a crystalline thin film after the heat treatment. The change in the phase transformation, with an enhanced crystallinity, showed a reduced wettability. The hydrothermally treated nanorods with an amorphous thin film, on the other hand, showed an outstanding wettability. The HA thin film perpendicularly coated the nanorods in the upper and inner parts via RF magnetron sputtering, and the FT-IR results confirmed that the molecular bonding of the coated film had an HA structure.

Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

Directory of Open Access Journals (Sweden)

P. Balashabadi

2013-12-01

Full Text Available A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.

Some properties of the gas magnetron; neke osobine gasnog magnetrona

Energy Technology Data Exchange (ETDEWEB)

Miljevic, V [Boris Kidric Institute of nuclear sciences, Vinca, Belgrade (Yugoslavia)

1979-07-01

The cylindrical magnetron diode with directly heated cathode, filled with argon at low pressure, has been studied. In the case of high magnetic fields and low gas pressure the motion of electrons is reduced to the rotation around the cathode with superimposed allow radial drift. It is found that the plasma formation time in in the msec region. The critical magnetic field in the vacuum diode (B{sub c}), and its value increases with the increase of the anode voltage and working pressure. (author)

Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM; Microestructura y propiedades electricas de bismuto y oxido de bismuto depositados por magnetron sputtering UBM

Energy Technology Data Exchange (ETDEWEB)

Otalora B, D. M.; Dussan, A. [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Carrera 30 No. 45-03, 111321 Bogota (Colombia); Olaya F, J. J., E-mail: jjolayaf@unal.edu.co [Universidad Nacional de Colombia, Facultad de Ingenieria, Departamento de Ingenieria Mecanica y Mecatronica, Carrera 30 No. 45-03, 111321 Bogota (Colombia)

2015-07-01

In this work, bismuth (Bi) and bismuth oxide (Bi{sub 2}O{sub 3}) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi{sub 2}O{sub 3}. From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi{sub 2}O{sub 3} and Bi, respectively. (Author)

Nucleation of ultrathin silver layer by magnetron sputtering in Ar/N2 plasma

Czech Academy of Sciences Publication Activity Database

Bulíř, Jiří; Novotný, Michal; Lančok, Ján; Fekete, Ladislav; Drahokoupil, Jan; Musil, Jindřich

2013-01-01

Roč. 228, č. 1 (2013), S86-S90 ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR GP202/09/P324 Institutional support: RVO:68378271 Keywords : ultrathin silver * magnetron sputtering * spectral ellipsometry * in-situ monitoring Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.199, year: 2013

Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

International Nuclear Information System (INIS)

Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

2010-01-01

Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

Interfacial Structure and Photocatalytic Activity of Magnetron Sputtered TiO2 on Conducting Metal Substrates

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Petit, Jean-Pierre; Mermoux, Michel

2014-01-01

The photocatalytic behavior of magnetron sputtered anatase TiO2 coatings on copper, nickel, and gold was investigated with the aim of understanding the effect of the metallic substrate and coating-substrate interface structure. Stoichiometry and nanoscale structure of the coating were investigated...

Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Azanza Ricardo, C.L., E-mail: Cristy.Azanza@ing.unitn.it [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Pastorelli, M.; D' Incau, M. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Aswath, P. [College of Engineering, University of Texas at Arlington, TX (United States); Scardi, P. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy)

2016-04-30

Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed. - Highlights: • Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering. • Correlation of stresses and texture with electrical and optical properties is shown. • Homogeneous and stress-free thin-films are the best performing ones. • XANES confirmed the doping mechanism and excluded some spurious phases.

DC Magnetron sputtering of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Larsson, Gunnar.

1990-01-01

I have been studying dc magnetron sputtering of thin film YBa 2 Cu 3 O 6+x , one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

Giant Negative Piezoresistive Effect in Diamond-like Carbon and Diamond-like Carbon-Based Nickel Nanocomposite Films Deposited by Reactive Magnetron Sputtering of Ni Target

DEFF Research Database (Denmark)

Meškinis, Šaru Nas; Gudaitis, Rimantas; Šlapikas, Kęstutis

2018-01-01

deposited by either reactive HIPIMS or dc magnetron sputtering of Ni target was explained by possible clustering of the sp2-bonded carbon and/or formation of areas with the decreased hydrogen content. It was suggested that the tensile stress-induced rearrangements of these conglomerations have resulted......Piezoresistive properties of hydrogenated diamond-like carbon (DLC) and DLC-based nickel nanocomposite (DLC:Ni) films were studied in the range of low concentration of nickel nanoparticles. The films were deposited by reactive high power pulsed magnetron sputtering (HIPIMS) of Ni target, and some...... samples were deposited by direct current (dc) reactive magnetron sputtering for comparison purposes. Raman scattering spectroscopy, energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to study the structure and chemical composition of the films. A four...

ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

Energy Technology Data Exchange (ETDEWEB)

Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

2016-08-01

Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

DEFF Research Database (Denmark)

Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

2014-01-01

Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3...

Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating

CERN Document Server

Rosaz, Guillaume; Calatroni, Sergio; Sublet, Alban; Tobarelli, Mauro

2016-01-01

We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnet profiles. These show a good agreement between the expected and actual values. the qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016A.cm^-2 to 0.074A.cm^-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10^-3 mbar and a plasma source power of 300W.

Crystalline silicon films grown by pulsed dc magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

2002-04-01

Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

NARCIS (Netherlands)

Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to

Nanoscale Cu{sub 2}O films: Radio-frequency magnetron sputtering and structural and optical studies

Energy Technology Data Exchange (ETDEWEB)

Kudryashov, D. A., E-mail: kudryashovda@apbau.ru; Gudovskikh, A. S. [Russian Academy of Sciences, St. Petersburg National Research Academic University — Nanotechnology Research and Education Center (Russian Federation); Babichev, A. V.; Filimonov, A. V. [Connector Optics LLC (Russian Federation); Mozharov, A. M. [Russian Academy of Sciences, St. Petersburg National Research Academic University — Nanotechnology Research and Education Center (Russian Federation); Agekyan, V. F.; Borisov, E. V.; Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University (Russian Federation)

2017-01-15

Nanoscale copper (I) oxide layers are formed by magnetron-assisted sputtering onto glassy and silicon substrates in an oxygen-free environment at room temperature, and the structural and optical properties of the layers are studied. It is shown that copper oxide formed on a silicon substrate exhibits a lower degree of disorder than that formed on a glassy substrate, which is supported by the observation of a higher intensity and a smaller half-width of reflections in the diffraction pattern. The highest intensity of reflections in the diffraction pattern is observed for Cu{sub 2}O films grown on silicon at a magnetron power of 150 W. The absorption and transmittance spectra of these Cu{sub 2}O films are in agreement with the well-known spectra of bulk crystals. In the Raman spectra of the films, phonons inherent in the crystal lattice of cubic Cu{sub 2}O crystals are identified.

Depth profile analyses of nc-TiC/a-C:H coating prepared by balanced magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Vašina, P.; Souček, P.; Schmidtová, T.; Eliáš, M.; Buršíková, V.; Jílek, M.; Jílek Jr., M.; Schäfer, C.; Buršík, Jiří

2011-01-01

Roč. 205, Suppl. 2 (2011), S53-S56 ISSN 0257-8972 Institutional research plan: CEZ:AV0Z20410507 Keywords : composite * mechanical properties * magnetron Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.867, year: 2011

The effect of brain hematoma location on volumetric inductive phase shift spectroscopy of the brain with circular and magnetron sensor coils: a numerical simulation study

International Nuclear Information System (INIS)

Rojas, R; González, C A; Rubinsky, B

2008-01-01

This numerical simulation study addressed the effects of the location of a discrete brain hematoma on the volumetric inductive phase shift of the brain measured with an induction circular sensor coil and an induction magnetron sensor coil. The theoretical study simulates the brain cavity as a circular sphere transversely centered with respect to the circular and magnetron sensor coils. As a case study for the effects of hematoma location, we employed similar size simulated spherical hematomas placed at three different positions from the center of the brain outward. A three-dimensional finite element analysis of the field equations in the frequency range from 100 kHz to 100 MHz revealed a substantial effect of hematoma location on the ability of both the circular and magnetron sensors to detect the hematomas. In particular it was found that there are frequencies, which may be related to resonance, at which the occurrence of the hematomas has no effect on the volumetric inductive phase shift of the brain. Furthermore it was found that the relative sensitivity of circular and magnetron sensor coils with respect to the occurrence of hematoma varies with the location of the hematoma

Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

2014-12-01

The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

International Nuclear Information System (INIS)

Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

2014-01-01

The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties

Czech Academy of Sciences Publication Activity Database

Vlček, J.; Kormunda, M.; Čížek, J.; Soukup, Z.; Peřina, Vratislav; Zemek, Josef

2003-01-01

Roč. 12, č. 8 (2003), s. 1287-1294 ISSN 0925-9635 R&D Projects: GA MŠk ME 203; GA MŠk OC 527.90 Institutional research plan: CEZ:MSM 235200002 Keywords : silicon-carbon-nitride films * magnetron co-sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.867, year: 2003

Study on the preparation of boron-rich film by magnetron sputtering in oxygen atmosphere

Energy Technology Data Exchange (ETDEWEB)

Pan, Zhangmin; Yang, Yiming; Huang, Jian; Ren, Bing; Yu, Hongze; Xu, Run; Ji, Huanhuan; Wang, Lin; Wang, Linjun, E-mail: ljwang@shu.edu.cn

2016-12-01

Highlights: • Boron ({sup 10}B) oxide films were successfully grown using RF magnetron sputtering. • Effects of oxygen partial pressure on the property of the films were studied. • Substrates were covered with B-rich film and film surface was covered with B{sub 2}O{sub 3}. • The growth mechanism of films in oxygen atmosphere was analyzed using XPS. - Abstract: In this paper, the growth of boron ({sup 10}B) oxide films on (1 0 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B{sub 2}O{sub 3}. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.

Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

International Nuclear Information System (INIS)

Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

2015-01-01

In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

International Nuclear Information System (INIS)

Pei, Y.T.; Chen, C.Q.; Shaha, K.P.; De Hosson, J.Th.M.; Bradley, J.W.; Voronin, S.A.; Cada, M.

2008-01-01

In this paper, we report some striking results on the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering. The interface morphology and microstructure evolution as a function of pulse frequency and duty cycle were scrutinized using atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy techniques. It is shown that, with increasing pulse frequency, the nanocomposite coatings exhibit evolutions in morphology of the growing interface from rough to smooth and in the microstructure from strongly columnar to fully columnar-free. In addition, the smoothly growing interface favors the formation of a tailor-made multilayered nanocomposite structure. The fundamental mechanisms are analyzed with the assistance of plasma diagnostic experiments. Ion mass/energy spectrometry measurements reveal that, depending on the frequency and duty cycle of DC pulses, pulsing of the magnetrons can control the flux and energy distribution of Ar + ions over a very broad range for concurrent impingement on the growing interface of deposited coatings, in comparison with DC sputtering. The significantly enhanced energy flux density is thought to be responsible for the 'adatom transfer' in interface smoothening and thus the restraint of columnar growth

Investigation of the possible technological use of magnetron-synthetic coverings on the basis of niobium nitridium to manufacture high conductivity windings during the generation of power magnetic fields

International Nuclear Information System (INIS)

Kadyrzhanov, K.; Zhetbaev, A.; Tuleushev, A.; Penkov, F.; Lisitsin, V.; Kim, S.; Tuleushev, Yu.; Turkebaev, T.; Borisenko, A.; Gorlachev, I.; Platov, A.; Lisuchin, S.; Skoz, E.; Zhukov, V.; Guliykin, Yu.; Chavalinsky, Yu.

1996-01-01

The main objective. The objective of this project is to investigate the possibilities for technological use of niobium nitride-based magnetron synthesized coatings for the purpose of manufacture of superconducting tape windings when generating strong magnetic fields for NMR-tomographs and commercial magnets. Background. Niobium nitride can be produced by sputtering as a continuous coating directly on the surface of a substrate made of a normal conductor, e.g. a copper or aluminium thin tape, by well-known techniques of plasma-chemical synthesis, using magnetron procedure (d.c. magnetron), allowing al synthesis, using magnetron procedure (d.c. magnetron), allowing to solve some difficult problems of superconductor manufacture by means of plastic deformation. For example, risk of break of a superconducting thread will no longer arises and the procedure of control for heat removal and relation between the thickness of superconducting and normal components will be made much easier, and, in turn, this enables to enhance stability of superconductivity and to prevent flux quench. Methodology. The group of eleven specialists from NNC RK will be occupied in the magnetron synthesis of niobium nitride coatings of copper and aluminum foils (five persons) and in its X-ray, nuclear-physical and electron microscopic analysis (six persons). The group of six specialists from the ULBA plant will be occupied in determination of the critical parameters of belt samples with niobium nitride coatings produced by Inst. of Nuclear Physics' specialists. Multi-purpose research test benches for determination of superconductor critical parameters that are available at the ULBA enables to test different types superconductor characteristics, including film ones, in magnetic fields up to 11 T at helium temperatures. Expected Results. As the result of the project execution complete evaluation concerning technical reasoning for magnetron ways of coating synthesis of niobium nitride when

Metal-oxide-junction, triple point cathodes in a relativistic magnetron

International Nuclear Information System (INIS)

Jordan, N. M.; Gilgenbach, R. M.; Hoff, B. W.; Lau, Y. Y.

2008-01-01

Triple point, defined as the junction of metal, dielectric, and vacuum, is the location where electron emission is favored in the presence of a sufficiently strong electric field. To exploit triple point emission, metal-oxide-junction (MOJ) cathodes consisting of dielectric ''islands'' over stainless steel substrates have been fabricated. The two dielectrics used are hafnium oxide (HfO x ) for its high dielectric constant and magnesium oxide (MgO) for its high secondary electron emission coefficient. The coatings are deposited by ablation-plasma-ion lithography using a KrF laser (0-600 mJ at 248 nm) and fluence ranging from 3 to 40 J/cm 2 . Composition and morphology of deposited films are analyzed by scanning electron microscopy coupled with x-ray energy dispersive spectroscopy, as well as x-ray diffraction. Cathodes are tested on the Michigan Electron Long-Beam Accelerator with a relativistic magnetron, at parameters V=-300 kV, I=1-15 kA, and pulse lengths of 0.3-0.5 μs. Six variations of the MOJ cathode are tested, and are compared against five baseline cases. It is found that particulate formed during the ablation process improves the electron emission properties of the cathodes by forming additional triple points. Due to extensive electron back bombardment during magnetron operation, secondary electron emission also may play a significant role. Cathodes exhibit increases in current densities of up to 80 A/cm 2 , and up to 15% improvement in current start up time, as compared to polished stainless steel cathodes

Investigation of the time evolution of plasma parameters in a pulsed magnetron discharge

Czech Academy of Sciences Publication Activity Database

Straňák, V.; Hubička, Zdeněk; Adámek, P.; Blažek, J.; Tichý, M.; Špatenka, P.; Hippler, R.; Wrehde, S.

2006-01-01

Roč. 56, - (2006), s. 1364-1370 ISSN 0011-4626 R&D Projects: GA ČR GA202/05/2242; GA ČR GA202/06/0776 Grant - others:Deutsche Forschungsgemeinschaft(DE) SFB/TR 24 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed magnetron * time resolved measurements * Langmuir probe Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.568, year: 2006

A comparison of plasma in laser and hybrid laser-magnetron SiC deposition systems

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Jelínek, Miroslav

2007-01-01

Roč. 4, - (2007), S1017-S1021 ISSN 1612-8850 R&D Projects: GA AV ČR KJB1010417; GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : laser ablation * magnetron sputtering * optical emission spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.132, year: 2007

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

2015-05-01

Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

Growth behavior of rat bone marrow cells on RF magnetron sputtered hydroxyapatite and dicalcium pyrophosphate coatings.

NARCIS (Netherlands)

Yan, Y.; Wolke, J.G.C.; Ruijter, A. De; Yubao, L.; Jansen, J.A.

2006-01-01

The aim of this study was to evaluate the osteogenic properties of magnetron sputtered dicalcium pyrophaosphate (DCPP) and hydroxylapatite (HA) coatings. Therefore, DCPP and HA coatings were deposited on grit-blasted titanium discs. The substrates were used as-prepared or received an additional heat

Antibacterial properties of nano-silver coated PEEK prepared through magnetron sputtering.

Science.gov (United States)

Liu, Xiuju; Gan, Kang; Liu, Hong; Song, Xiaoqing; Chen, Tianjie; Liu, Chenchen

2017-09-01

We aimed to investigate the cytotoxicity and antibacterial properties of nano-silver-coated polyetheretherketone (PEEK) produced through magnetron sputtering and provide a theoretical basis for its use in clinical applications. The surfaces of PEEKs were coated with nano-silver at varying thicknesses (3, 6, 9, and 12nm) through magnetron sputtering technology. The resulting coated PEEK samples were classified into the following groups according to the thickness of the nano-silver coating: PEEK-3 (3nm), PEEK-6 (6nm), PEEK-9 (9nm), PEEK-12 (12nm), and PEEK control group. The surface microstructure and composition of each sample were observed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive spectrum (EDS) analysis. The water contact angle of each sample was then measured by contact angle meters. A cell counting kit (CCK-8) was used to analyze the cytotoxicity of the mouse fibroblast cells (L929) in the coated groups (n=5) and group test samples (n=6), negative control (polyethylene, PE) (n=6), and positive control group (phenol) (n=6). The antibacterial properties of the samples were tested by co-culturing Streptococcus mutans and Straphylococcus aureus. The bacteria that adhered to the surface of samples were observed by SEM. The antibacterial adhesion ability of each sample was then evaluated. SEM and AFM analysis results showed that the surfaces of control group samples were smooth but compact. Homogeneous silver nano-particles (AgNPs) and nano-silver coating were uniformly distributed on the surface of the coated group samples. Compared with the control samples, the nano-silver coated samples had a significant increase in surface roughness (Pnano-silver coating increased. EDS analysis showed that not only C and O but also Ag were present on the surface of the coated samples. Moreover, the water contact angle of modified samples significantly increased after nano-silver coating modification (Pnano-silver coating can

Advanced TiC/a-C: H nanocomposite coatings deposited by magnetron sputtering

OpenAIRE

Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

2006-01-01

TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing substrate bias or carbon content. Micro-cracks induced by nanoindentation or wear tests readily propagate through the column boundaries whereas the coatings without a columnar inicrostructure exhibit s...

Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

Czech Academy of Sciences Publication Activity Database

Straňák, V.; Wulff, H.; Rebl, H.; Zietz, C.; Arndt, K.; Bogdanowicz, R.; Nebe, B.; Bader, R.; Podbielski, A.; Hubička, Zdeněk; Hippler, R.

2011-01-01

Roč. 31, č. 7 (2011), s. 1512-1519 ISSN 0928-4931 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100520 Keywords : implant coating * titanium-copper film * pulsed magnetron sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.686, year: 2011

Deposition of thin films by magnetron sputtering molybdenum in samples of pure copper; Deposicao de filmes finos de molibdenio por magnetron sputtering em amostra de cobre puro

Energy Technology Data Exchange (ETDEWEB)

Ferreira, N.M.; Almeida, E.O. de; Alves Junior, C. [Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Nova, PPGCEM - Natal, RN (Brazil); Lourenco, J.M. [Instituto Federal de Educacao, Ciencias e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil)

2010-07-01

The deposition surface is a process of thermochemical treatment, which involves the deposition of a thin film usually about one to two microns on a metallic substrate, which constitutes one of the most important surface engineering techniques. The plasma deposition process with the configuration of magnetron sputtering it is removing material from a solid surface (target) through the impact of energetic particles from plasma. The aim of this study is to characterize the microstructure of the material under study using the techniques of optical microscopy and scanning electron microscopy. (author)

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

Science.gov (United States)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

2016-10-30

Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

International Nuclear Information System (INIS)

Qi, Q.; Zhang, W.Z.; Shi, L.Q.; Zhang, W.Y.; Zhang, W.; Zhang, B.

2012-01-01

Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated. - Highlights: ► Single-crystal films of TiC (111) have been synthesized by RF magnetron sputtering. ► Both temperature and bias affect greatly the TiC crystal structure. ► Al 2 O 3 substrate is much better than Si substrate for TiC epitaxial growth. ► TiC (111) epitaxial film can be grown on Al 2 O 3 (0001) at room temperature.

Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

Science.gov (United States)

Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

2016-05-01

Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

Algan/Gan Hemt By Magnetron Sputtering System

Science.gov (United States)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Tribological characterization of TiN coatings prepared by magnetron sputtering

Science.gov (United States)

Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

2018-05-01

Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

OpenAIRE

Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx

Contribution to mechanical and crystallographic analysis of molyledenum layers prepared by magnetron cathode sputtering

International Nuclear Information System (INIS)

Bosland, P.

1988-01-01

Molybdenum coatings presenting different compression stresses are elaborated by magnetron cathode sputtering by varying the negative voltage of the substrate during deposition. Stress evolution is accompanied by crystal texture evolution and argon content incorporated in the layers. Crystallite orientation is explained by a phenomenon similar to canalisation observed in ion implantation. In a same deposit each component presents its own deformations different from neighbouring components [fr

Development of low temperature RF magnetron sputtered ITO films on flexible substrate

Energy Technology Data Exchange (ETDEWEB)

Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2010-09-15

Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

Deposition and characterization of single magnetron deposited Fe:SnO{sub x} coatings

Energy Technology Data Exchange (ETDEWEB)

Kormunda, Martin, E-mail: martin.kormunda@ujep.cz [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Fischer, Daniel; Hertwig, Andreas; Beck, Uwe [BAM Federal Institute for Materials Research and Testing, Division 6 4 Surface Technologies, Unter den Eichen 44-46, 12203 Berlin (Germany); Sebik, Matej; Pavlik, Jaroslav [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Esser, Norbert [Leibniz-Institut für Analytische Wissenschaften — ISAS e.V., Department Berlin, Schwarzschildstr. 12, 12489 Berlin (Germany)

2015-11-30

Coatings deposited by magnetron co-sputtering from a single RF magnetron with a ceramic SnO{sub 2} target with iron inset in argon plasma were studied. The mass spectra of the process identified Sn{sup +} and SnO{sup +} species as the dominant species sputtered from the target, but no SnO{sub 2}{sup +} species were detected. The dominant positive ions in argon plasma are Ar{sup +} species. The only detected negative ions were O{sup −}. Sputtered neutral tin related species were not detected. Iron related species were also not detected because their concentration is below the detection limit. The concentration of iron dopant in the tin oxide coatings was controlled by the RF bias applied on the substrate holder while the discharge pressure also has some influence. The iron concentration was in the range from 0.9 at.% up to 19 at.% increasing with the substrate bias while the sheet resistivity decreases. The stoichiometry ratio of O/(Sn + Fe) in the coatings increased from 1.7 up to 2 in dependence on the substrate bias from floating bias (− 5 V) up to − 120 V of RF self-bias, respectively. The tin in the coatings was mainly bonded in Sn{sup 4+} state and iron was mainly in Fe{sup 2+} state when other tin bonding states were detected only in a small amounts. Iron bonding states in contrary to elemental compositions of the coatings were not influenced by the RF bias applied on the substrate. The coatings showed high transparency in the visible spectral range. However, an increased metallic behavior could be detected by using a higher RF bias for the deposition. The X-ray diffraction patterns and electron microscopy pictures made on the coatings confirmed the presence of an amorphous phase. - Highlights: • RF magnetron sputtering of SnO{sub 2} target with Fe inset in argon investigated by mass spectrometry • Optical properties of Fe doped SnO{sub x} coatings characterized • Analyses of overlapped XPS peaks at a spectrum from Fe doped SnO{sub x} coatings �

Epitaxial growth of "infinite layer” thin films and multilayers by rf magnetron sputtering

OpenAIRE

Fàbrega, L.; Koller, E.; Triscone, J. M.; Fischer, Ø.

2017-01-01

We report on the preparation and characterization of epitaxial ACuO2 (A = Sr, Ca, Ba) thin films and multilayers with the so- called infinite layer (IL) structure, by rf magnetron sputtering. Films and multilayers without Ba have a remarkable crystal quality, whereas those containing this large ion are often multiphased and unstable. In spite of the excellent crystalline quality of these samples, obtaining thin films having both IL structure and displaying superconducting properties has not s...

Overview of recent studies and design changes for the FNAL magnetron ion source

Science.gov (United States)

Bollinger, D. S.; Sosa, A.

2017-08-01

This paper presents several studies and design changes that will eventually be implemented to the Fermi National Accelerator Laboratory (FNAL) magnetron ion source. The topics include tungsten cathode insert, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction. The studies were performed on the FNAL test stand described in [1], with the aim to improve source lifetime, stability, and reducing the amount of tuning needed.

Overview of Recent Studies and Design Changes for the FNAL Magnetron Ion Source

Energy Technology Data Exchange (ETDEWEB)

Bollinger, D. S. [Fermilab; Sosa, A. [Fermilab

2016-09-06

This paper will cover several studies and design changes that will eventually be implemented to the Fermi National Accelerator Laboratory (FNAL) magnetron ion source. The topics include tungsten cathode insert, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction. The studies were performed on the FNAL test stand described in [1], with the aim to improve source lifetime, stability, and reducing the amount of tuning needed.

Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

International Nuclear Information System (INIS)

Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

1996-01-01

Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-12-15

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

International Nuclear Information System (INIS)

Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-01-01

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

2016-03-01

Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

International Nuclear Information System (INIS)

Galvez de la Puente, G.; Guerra Torres, J.A.; Erlenbach, O.; Steidl, M.; Weingaertner, R.; De Zela, F.; Winnacker, A.

2010-01-01

We produce amorphous silicon carbide thin films (a-SiC) by radio frequency (rf) magnetron sputtering from SiC bulk target. We present the emission pattern of the rf magnetron with SiC target as a function of process parameters, like target sample distance, rf power, sputtering rate and process gas pressure. The emission pattern is determined by means of thickness distribution of the deposited a-SiC films obtained from optical transmission measurements using a slightly improved method of Swanepoel concerning the determination of construction of the envelopes in the interference pattern of the transmission spectra. A calibration curve is presented which allows the conversion of integrated transmission to film thickness. Holding constant a set of process parameters and only varying the target sample distance the emission pattern of the rf magnetron with SiC target was determined, which allowed us to predict the deposition rate distribution for a wide range of process parameters and target geometry. In addition, we have found that the transmission spectra of the a-SiC films change with time and saturate after approximately 10 days. Within this process no change in thickness is involved, so that the determination of thickness using transmission data is justified.

Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

2013-01-01

We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications

Science.gov (United States)

Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Sasinková, V.; Boháček, P.; Arbet, J.

2018-03-01

N-doped carbon thin films were deposited on a silicon substrate and quartz glass by RF reactive magnetron sputtering using a carbon target and an Ar+N2 gas mixture. During the magnetron sputtering, the substrate holder temperatures was kept at 800 °C. The carbon film thickness on the silicon substrate was about 70 nm, while on the quartz glass it was in the range 15 nm – 60 nm. The elemental concentration in the films was determined by RBS and ERD. Raman spectroscopy was used to evaluate the intensity ratios I D/I G of the D and G peaks of the carbon films. The transmission photocathodes prepared were placed in the hollow-cathode assembly of a Pierce-structure DC gun to produce photoelectrons. The quantum efficiency (QE) was calculated from the laser energy and cathode charge measured. The properties of the transmission photocathodes based on semitransparent N-doped carbon thin films on quartz glass and their potential for application in DC gun technology are discussed.

Investigation of Rising-Sun Magnetrons Operated at Relativistic Voltages Using Three Dimensional Particle-in-Cell Simulation

International Nuclear Information System (INIS)

Lemke, R.W.; Genoni, T.C.; Spencer, T.A.

1999-01-01

This work is an attempt to elucidate effects that may limit efficiency in magnetrons operated at relativistic voltages (V ∼ 500 kV). Three-dimensional particle-in-cell simulation is used to investigate the behavior of 14 and 22 cavity, cylindrical, rising-sun magnetrons. Power is extracted radially through a single iris located at the end of every other cavity. Numerical results show that in general output power and efficiency increase approximately linearly with increasing iris width (decreasing vacuum Q) until the total Q becomes too low for stable oscillation in the n-mode to be maintained. Beyond this point mode competition and/or switching occur and efficiency decreases. Results reveal that the minimum value of Q (maximum efficiency) that can be achieved prior to the onset of mode competition is significantly affected by the magnitude of the 0-space-harmonic of the π-mode, a unique characteristic of rising-suns, and by the magnitude of the electron current density (space-charge effects). By minimizing these effects, up to 3.7 GW output power has been produced at an efficiency of 40%

Effect of interelectrode distance on dc magnetron current-pressure characteristics

Science.gov (United States)

Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

2018-01-01

The current-pressure (I-P) non-monotonic characteristic in the magnetron discharge dc in argon at different interelectrode distances was investigated. The ion spatial distribution was obtained with optical emission spectroscopy and the characteristic dimensions of the discharge structure in near cathode region were determined. It is shown that decreasing the distance between electrodes does not affect the shape and position of the nonmonotonic part of I-P characteristic until this distance become comparable with the dimensions of the ionization region near cathode. The existence of non-monotonic part of I-P characteristic is determined by the processes in the near cathode region and is probably unrelated with the cold electron transfer in the rest of the plasma.

Urea impedimetric biosensor based on reactive RF magnetron sputtered zinc oxide nanoporous transducer

International Nuclear Information System (INIS)

Mozaffari, Sayed Ahmad; Rahmanian, Reza; Abedi, Mohammad; Amoli, Hossein Salar

2014-01-01

Graphical abstract: - Highlights: • Application and optimization of reactive RF magnetron sputtering for homogeneous nanoporous ZnO thin film formation. • Exploiting nanoporous ZnO thin film as a good porous framework with large surface area/volume for having stable immobilized enzyme with minimum loss of activity. • Application of impedimetric assessment for urea biosensing due to its rapidity, sensitivity, and repeatability. - Abstract: Uniform sputtered nanoporous zinc oxide (Nano-ZnO) thin film on the conductive fluorinated-tin oxide (FTO) layer was applied to immobilize urease enzyme (Urs) for urea detection. Highly uniform nanoporous ZnO thin film were obtained by reactive radio frequency (RF) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface morphology and roughness of ZnO thin film by field emission-scanning electron microscopy (FE-SEM) exhibits cavities of nanoporous film as an effective biosensing area for enzyme immobilization. Step by step monitoring of FTO/Nano-ZnO/Urs biosensor fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated FTO/Nano-ZnO/Urs biosensor was used for urea determination using EIS experiments. The impedimetric results show high sensitivity for urea detection within 0.83–23.24 mM and limit of detection as 0.40 mM

Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

Science.gov (United States)

Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

2017-08-01

The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

2012-02-15

Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy

Science.gov (United States)

Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

2018-04-01

This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2 kV and a power supply system equipped with 25/50 μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp3/sp2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp3/sp2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed.

Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy.

Science.gov (United States)

Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

2018-04-05

This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2kV and a power supply system equipped with 25/50μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp 3 /sp 2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp 3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp 3 /sp 2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp 3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed. Copyright © 2018 Elsevier B.V. All rights reserved.

Investigation of DC magnetron-sputtered TiO2 coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Shabadi, Rajashekhara; Galca, Aurelian Catalin

2014-01-01

The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO2) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic...

Domino Platform: PVD Coaters for Arc Evaporation and High Current Pulsed Magnetron Sputtering

International Nuclear Information System (INIS)

Vetter, J; Müller, J; Erkens, G

2012-01-01

AlTiN and CrN coatings were deposited in hybrid DOMINO platforms by magnetron sputtering (DC-MS, DC-MS+HCP-MS, HCP-MS) and vacuum arc evaporation. The ion cleaning was done by the AEGD process. The coating rates and the energy efficiency of both deposition processes were compared. The roughness effects of the different coating types were discussed. Preliminary results of the change of pulse characteristics during simultaneously running of HCP-MS plus vacuum arc evaporation are shown.

Composite SiOx/hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO2 and polyimide

Czech Academy of Sciences Publication Activity Database

Drabik, M.; Kousal, J.; Pinosh, Y.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Boldyryeva, Hanna; Pešička, J.

2007-01-01

Roč. 81, č. 7 (2007), s. 920-927 ISSN 0042-207X Institutional research plan: CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering * polyimide * SiO2 Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.881, year: 2007

Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber

Czech Academy of Sciences Publication Activity Database

Pokorný, Petr; Musil, Jindřich; Fitl, Přemysl; Novotný, Michal; Lančok, Ján; Bulíř, Jiří

2015-01-01

Roč. 12, č. 5 (2015), s. 416-421 ISSN 1612-8850 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR(CZ) GAP108/11/1312; GA ČR(CZ) GAP108/11/0958; GA ČR(CZ) GA14-10279S Institutional support: RVO:68378271 Keywords : contamination * low-pressure discharges * magnetron * metallic films * sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.713, year: 2015

Composite TiO2/hydrocarbon plasma polymer films prepared by magnetron sputtering of TiO2 and poly(propylene)

Czech Academy of Sciences Publication Activity Database

Drabik, M.; Hanuš, J.; Kousal, J.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Pešička, J.

2007-01-01

Roč. 4, č. 6 (2007), s. 654-663 ISSN 1612-8850 Institutional research plan: CEZ:AV0Z10480505 Keywords : composite thin films * magnetron * poly(propylene) (PP) Subject RIV: BE - Theoretical Physics Impact factor: 2.132, year: 2007

Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

Energy Technology Data Exchange (ETDEWEB)

Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

2017-08-31

Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

Nitrogen Atom Energy Distributions in a Hollow-cathode Planar Sputtering Magnetron

International Nuclear Information System (INIS)

Ruzic, D.N.; Goeckner, M.J.; Cohen, S.A.; Wang, Zhehui

1999-01-01

Energy distributions of N atoms in a hollow-cathode planar sputtering magnetron were obtained by use of optical emission spectroscopy. A characteristic line, N I 8216.3 , well-separated from molecular nitrogen emission bands, was identified. Jansson's nonlinear spectral deconvolution method, refined by minimization of χ w ampersand sup2; , was used to obtain the optimal deconvolved spectra. These showed nitrogen atom energies from 1 eV to beyond 500 eV. Based on comparisons with VFTRIM results, we propose that the energetic N atoms are generated from N 2 + ions after these ions are accelerated through the sheath and dissociatively reflect from the cathode

Venting temperature determines surface chemistry of magnetron sputtered TiN films

Energy Technology Data Exchange (ETDEWEB)

Greczynski, G. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Hultman, L. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2016-01-25

Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature T{sub v}, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that T{sub v} has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

A study of the transient plasma potential in a pulsed bi-polar dc magnetron discharge

International Nuclear Information System (INIS)

Bradley, J W; Karkari, S K; Vetushka, A

2004-01-01

The temporal evolution of the plasma potential, V p , in a pulsed dc magnetron plasma has been determined using the emissive probe technique. The discharge was operated in the 'asymmetric bi-polar' mode, in which the discharge voltage changes polarity during part of the pulse cycle. The probe measurements, with a time-resolution of 20 ns or better, were made along a line above the racetrack, normal to the plane of the cathode target, for a fixed frequency (100 kHz), duty cycle (50%), argon pressure (0.74 Pa) and discharge power (583 W). At all the measured positions, V p was found to respond to the large and rapid changes in the cathode voltage, V d , during the different phases of the pulse cycle, with V p always more positive than V d . At a typical substrate position (>80 mm from the target), V p remains a few volts above the most positive surface in the discharge at all times. In the 'on' phase of the pulse, the measurements show a significant axial electric field is generated in the plasma, with the plasma potential dropping by a total of about 30 V over a distance of 70 mm, from the bulk plasma to a position close to the beginning of the cathode fall. This is consistent with measurements made in the dc magnetron. During the stable 'reverse' phase of the discharge, for distances greater than 18 mm from the target, the axial electric field is found to collapse, with V p elevated uniformly to about 3 V above V d . Between the target and this field-free region an ion sheath forms, and the current flowing to the target is still an ion current in this 'reverse' period. During the initial 200 ns of the voltage 'overshoot' phase (between 'on' and 'reverse' phases), V d reached a potential of +290 V; however, close to the target, V p was found to attain a much higher value, namely +378 V. Along the line of measurement, the axial electric field reverses in direction in this phase, and an electron current of up to 9 A flows to the target. The spatial and temporal

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

International Nuclear Information System (INIS)

Subrahmanyam, A.; Barik, U.K.

2006-01-01

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10 0 -10 -3 Ωcm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

Energy Technology Data Exchange (ETDEWEB)

Subrahmanyam, A; Barik, U K [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

2006-07-15

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

Generation of positive and negative oxygen ions in magnetron discharge during reactive sputtering of alumina

Czech Academy of Sciences Publication Activity Database

Pokorný, Petr; Bulíř, Jiří; Lančok, Ján; Musil, Jindřich; Novotný, Michal

2010-01-01

Roč. 7, č. 11 (2010), s. 910-914 ISSN 1612-8850 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : aluminium oxide * ion-energy distribution function * magnetron * mass spectrometry * pulsed discharges Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.643, year: 2010

Magnetron with flux switching cathode and method of operation

Science.gov (United States)

Aaron, D.B.; Wiley, J.D.

1989-09-12

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering

International Nuclear Information System (INIS)

Li, Leliang; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2014-01-01

(Sr,Ba) 2 SiO 4 :Eu 2+ thin films were deposited on Si at different substrate temperatures by magnetron sputtering. The morphology and crystalline phases of the films were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) measurements, respectively. The silicate crystal phase was presented when films were annealed above 900 °C and the annealing temperature had great impact on the film morphology. The samples annealed at 1000 °C in a non-reducing atmosphere for 30 s show intense room temperature Eu 2+ emission. These findings may open a promising way to prepare efficient phosphor thin films for on-chip light emitting diodes application. - Highlights: • The (Sr, Ba) 2 SiO 4 :Eu 2+ films are fabricated by magnetron sputtering. • A very strong RT PL emission at 540 nm is achieved. • The morphology and optical properties dependent on temperature are studied

Study of deposition rae coating of Ag thin films by magnetron sputtering

International Nuclear Information System (INIS)

Ghanati, M.; Zendehnam, A.

2003-01-01

Exact knowledge about deposition rate and its distribution and variation of them with respect to coating parameters (Gas pressure, Distance, discharge current,..) is very vital. In this experimental research coating of Ag thin films by magnetron sputtering have been carried out over Ar pressure range of 10 -2 -10 -1 mbar, and discharge current up to 1000 m.A, and distance between glass substrates to silver target (Cathode) was changed from 5 to 15 cm. The obtained results have been investigated by help of computer curve fitting, and these studies show a very good agreement for the conditions used in this work

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

International Nuclear Information System (INIS)

Andersson, Joakim; Ni, Pavel; Anders, André

2013-01-01

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

International Nuclear Information System (INIS)

Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

2015-01-01

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

2015-08-31

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

Tube Inner Coating of Non-Conductive Films by Pulsed Reactive Coaxial Magnetron Plasma with Outer Anode

Directory of Open Access Journals (Sweden)

Musab Timan Idriss Gasab

2018-03-01

Full Text Available The double-ended coaxial magnetron pulsed plasma (DCMPP method with auxiliary outer anode was introduced in order to achieve the uniform coating of non-conductive thin films on the inner walls of insulator tubes. In this study, titanium (Ti was employed as a cathode (sputtering target, and a glass tube was used as a substrate. In an argon (Ar and oxygen (O2 gas mixture, magnetron plasma was generated. Oxygen gas was introduced to deposit a titanium oxide (TiO2 film. A comparison between films coated with and without an auxiliary outer anode was made. As a result, it was clearly shown that the DCMPP method using an auxiliary outer anode enhanced the uniformity of the deposited non-conductive film compared to the conventional DCMPP method. Moreover, the optimum conditions under which the thin TiO2 film was deposited on the inner wall of the glass tube were revealed. From the results, it was supposed that the auxiliary outer anode contributed to the uniformity of the distributions of deposited negative charge on the non-conductive film and consequently the electric field and the plasma density uniform.

Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

Energy Technology Data Exchange (ETDEWEB)

Muslim, Noormariah, E-mail: 14h8702@ubd.edu.bn [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Soon, Ying Woan [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Physical and Geological Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Lim, Chee Ming; Voo, Nyuk Yoong [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam)

2016-08-01

Pure nickel (Ni) thin films of thicknesses of 100 nm were deposited on glass substrates by radio frequency magnetron sputtering at a power of 100 W and at various substrate temperatures i.e., room temperature, 100, 200, and 300 °C. The crystalline structure, surface topography, surface morphology, electrical resistivity, and optical properties of the deposited films were studied. The properties of the Ni films could be controlled by altering the substrate temperature. Specifically, the films featured a face-centered cubic crystalline structure with predominant (111) crystallite orientation at all the substrate temperatures employed, as observed from the X-ray diffraction analysis. Films deposited at substrate temperatures greater than 200 °C additionally displayed crystalline (200) and (220) diffraction peaks. The surface morphology analysis revealed that the grain size of the Ni thin films increased with increasing substrate temperatures employed. This increase was accompanied with a decrease in the resistivity of the Ni films. The surface roughness of the films increased with increasing substrate temperatures employed, as observed from the atomic force microscopy analysis. - Highlights: • RF magnetron sputtering is a good alternative method to deposit Ni films. • Properties of Ni films could be controlled simply by tuning substrate temperatures. • Crystallite size and surface roughness increased with substrate temperatures. • Electrical resistivity reduced with increasing substrate temperatures. • Optical properties also changed with substrate temperatures.

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Ziad Y. Banyamin

2014-10-01

Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

Type II textured molybdenum disulphide films produced by direct vapour transport and rf-magnetron sputtering

International Nuclear Information System (INIS)

Bohlken, S.F.; Lemon, K.D.; Jakovidis, G.; Taheri, E.H.

1999-01-01

Full text: Molybdenum disulphide (MoS 2 ) is one of the few naturally occurring Layered Transition Metal Dichalcogenides and is the primary source for elemental molybdenum. It displays exceptional lubrication performance in both vacuum and atmospheric conditions over a wide temperature range. An important emerging application of MoS 2 and related materials is photovoltaics. Films of MoS 2 exhibit several morphologies described by the orientation of platelets with respect to the substrate. Films with platelets perpendicular or parallel to the substrate are referred to by their morphology, which is type-I or type-II respectively. Production of exclusive type-II films is highly desirable in applications involving lubrication and photovoltaics. For example, type-II morphology reduces friction and minority carrier recombination centres, thus improving tribological and photovoltaic performance. We have successfully produced type-II films using both direct vapour transport and rf-magnetron sputtering Continuous polycrystalline films (∼ 10 μm thick) grown in our laboratory using vapour transport have typical areas 1000 mm 2 . A novel ejecta filtration technique was applied to rf-magnetron sputtering. Films produced using this approach retain exclusive type-II morphology at thicknesses where type-I would normally be observed (∼ 200nm)

Magnetron deposition of metal-ceramic protective coatings on glasses of windows of space vehicles

OpenAIRE

Sergeev, Viktor Petrovich; Panin, Viktor Evgenyevich; Psakhie, Sergey Grigorievich; Chernyavskii, Alexandr; Svechkin, Valerii; Khristenko, Yurii; Kalashnikov, Mark Petrovich; Voronov, Andrei

2014-01-01

Transparent refractory metal-ceramic nanocomposite coatings with a high coefficient of elasticrecovery and microhardness on the basis of Ni/Si-Al-N are formed on a glass substrate by the pulse magnetron deposition method. The structure-phase states were investigated by TEM, SEM. It was established that the first layer consists of Ni nanograins with a fcc crystalline lattice, the second layer is two-phase: 5-10 nm nanocrystallites of the AlN phase with the hcp crystalline lattice in amorphous ...

Improving the Tribological Properties of Spark-Anodized Titanium by Magnetron Sputtered Diamond-Like Carbon

OpenAIRE

Zhaoxiang Chen; Xipeng Ren; Limei Ren; Tengchao Wang; Xiaowen Qi; Yulin Yang

2018-01-01

Spark-anodization of titanium can produce adherent and wear-resistant TiO2 film on the surface, but the spark-anodized titanium has lots of surface micro-pores, resulting in an unstable and high friction coefficient against many counterparts. In this study, the diamond-like carbon (DLC) was introduced into the micro-pores of spark-anodized titanium by the magnetron sputtering technique and a TiO2/DLC composite coating was fabricated. The microstructure and tribological properties of TiO2/DLC ...

Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Ratova, Marina, E-mail: marina_ratova@hotmail.com [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Kelly, Peter J.; West, Glen T. [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Tosheva, Lubomira; Edge, Michele [School of Science and the Environment, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

2017-01-15

Highlights: • Bismuth tungstate coatings were deposited by reactive magnetron sputtering. • Oscillating bowl was introduced to the system to enable coating of nanopartulates. • Deposition of Bi{sub 2}WO{sub 6} enhanced visible light activity of titania nanoparticles. • The best results were obtained for coating with Bi:W ratio of approximately 2:1. • Deposition of Bi{sub 2}WO{sub 6} onto TiO{sub 2} resulted in more efficient electron-hole separation. - Abstract: Titanium dioxide − bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer–Emmett–Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO{sub 2} evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO{sub 2} nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

Energy Technology Data Exchange (ETDEWEB)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

Magnetron injection gun for a broadband gyrotron backward-wave oscillator

International Nuclear Information System (INIS)

Yuan, C. P.; Chang, T. H.; Chen, N. C.; Yeh, Y. S.

2009-01-01

The magnetron injection gun is capable of generating relativistic electron beam with high velocity ratio and low velocity spread for a gyrotron backward-wave oscillator (gyro-BWO). However, the velocity ratio (α) varies drastically against both the magnetic field and the beam voltage, which significantly limits the tuning bandwidth of a gyro-BWO. This study remedies this drawback by adding a variable trim field to adjust the magnetic compression ratio when changing the operating conditions. Theoretical results obtained by employing a two-dimensional electron gun code (EGUN) demonstrate a constant velocity ratio of 1.5 with a low axial velocity spread of 6% from 3.4-4.8 Tesla. These results are compared with a three-dimensional particle-tracing code (computer simulation technology, CST). The underlying physics for constant α will be discussed in depth.

Magnetron injection gun for a broadband gyrotron backward-wave oscillator

Science.gov (United States)

Yuan, C. P.; Chang, T. H.; Chen, N. C.; Yeh, Y. S.

2009-07-01

The magnetron injection gun is capable of generating relativistic electron beam with high velocity ratio and low velocity spread for a gyrotron backward-wave oscillator (gyro-BWO). However, the velocity ratio (α) varies drastically against both the magnetic field and the beam voltage, which significantly limits the tuning bandwidth of a gyro-BWO. This study remedies this drawback by adding a variable trim field to adjust the magnetic compression ratio when changing the operating conditions. Theoretical results obtained by employing a two-dimensional electron gun code (EGUN) demonstrate a constant velocity ratio of 1.5 with a low axial velocity spread of 6% from 3.4-4.8 Tesla. These results are compared with a three-dimensional particle-tracing code (computer simulation technology, CST). The underlying physics for constant α will be discussed in depth.

Synthesis of ReN3 Thin Films by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

G. Soto

2014-01-01

Full Text Available In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40 orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

Dependence of plasma characteristics on dc magnetron sputter parameters

International Nuclear Information System (INIS)

Wu, S.Z.

2005-01-01

Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure

Direct current magnetron sputter-deposited ZnO thin films

International Nuclear Information System (INIS)

Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

2011-01-01

Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

Science.gov (United States)

Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

2014-10-01

Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Evaluation of composition, mechanical properties and structure of nc-TiC/a-C:H coatings prepared by balanced magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Jílek, M.; Abdelazziz, El Mel.; Tessier, P.Y.; Schäfer, J.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana

2012-01-01

Roč. 211, OCT 25 (2012), s. 111-116 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : nanocomposite * magnetron sputtering * titanium Subject RIV: JI - Composite Materials; BL - Plasma and Gas Discharge Physics (UJF-V) Impact factor: 1.941, year: 2012

125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

Science.gov (United States)

Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

2011-01-01

Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

Recent Developments in R.F. Magnetron Sputtered Thin Films for pH Sensing Applications—An Overview

OpenAIRE

D. K. Maurya; A. Sardarinejad; K. Alameh

2014-01-01

pH sensors are widely used in chemical and biological applications. Metal oxides-based pH sensors have many attractive features including insolubility, stability, mechanical strength, electrocatalyst and manufacturing technology. Various metal oxide thin films prepared by radio frequency (R.F.) magnetron sputtering have attractive features, including high pH sensitivity, fast response, high resolution, good stability and reversibility as well as potential for measuring pH under conditions th...

Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

International Nuclear Information System (INIS)

Louring, S.; Madsen, N.D.; Berthelsen, A.N.; Christensen, B.H.; Almtoft, K.P.; Nielsen, L.P.; Bøttiger, J.

2013-01-01

Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

Properties of tungsten films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

1986-01-01

High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

International Nuclear Information System (INIS)

Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

1994-01-01

Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

International Nuclear Information System (INIS)

Saad, M.; Kassis, A.

2009-05-01

ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

International Nuclear Information System (INIS)

Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

2002-01-01

Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

Energy Technology Data Exchange (ETDEWEB)

Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

2014-05-15

Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

Design of a magnetron injection gun for a 17.5-GHz

International Nuclear Information System (INIS)

Ha, H. J.; Kim, J. E.; Park, G. S.

1996-01-01

A gyrotwystron which is composed of cavities (gyro-klystron) and waveguides (gyro-TWT) is under investigation for broader bandwidth with high efficiency. A magnetron injection gun (MIG) for the gyrotwystron is designed with the trade-off equation for the MIG and optimized by computer simulation using the e-gun code. A 300-kW, 60-kV MIG with α ≡ υ t /υ z = 1.2 and Δυ z ≤ 5% designed for a 17.5-GHz gyrotwystron is discussed in this paper. Also, the effect of various MIG parameters, such as the beam voltage, the beam current, the magnetic field, the cathode radius and angle, and the MIG dimensions, on the characteristics of the beam (α, Δυ z ) is studied. (author)

Monte Carlo simulation of ionization in a magnetron plasma

International Nuclear Information System (INIS)

Miranda, J.E.; Goeckner, M.J.; Goree, J.; Sheridan, T.E.

1990-01-01

A Monte Carlo simulation of electrons emitted from the cathode of a planar magnetron is tested against experiments that were reported by Wendt, Lieberman, and Meuth [J. Vac. Sci. Technol. A 6, 1827 (1988)] and by Gu and Lieberman [J. Vac. Sci. Technol. A 6, 2960 (1988)]. Comparing their measurements of the radial profile of current and the axial profile of optical emission to the ionization profiles predicted by the model, we find good agreement for a typical magnetic field strength of 456 G. We also find that at 456 G the product of the average number of ionizations left-angle N i right-angle and the secondary electron emission coefficient γ is ∼1. This indicates that secondary emission contributes significantly to the ionization that sustains the discharge. At 171 G, however, left-angle N i right-angle γ much-lt 1, revealing that cathode emission is inadequate to sustain a discharge at a low magnetic field

Characterisation of magnetron sputtered SmCo5 thin films

International Nuclear Information System (INIS)

Wang, Y.; Sood, D.K.; Kothari

1999-01-01

SmCo 5 thin films were deposited using DC magnetron sputtering on single crystal silicon substrate with chromium and SiO 2 top layers. Deposition was carried out at three different substrate temperatures: room temperature, 400 deg C and 600 deg C. Films were characterised by using Rutherford Backscattering Spectroscopy (RBS), X-ray Diffraction (XRD), Secondary Ion Mass Spectrometry (SIMS) and SQUID magnetometer. RBS analysis indicated that the films have excellent stoichiometry with the Sm to Co ratio of 1:5. This analysis also showed that the films deposited or annealed at high temperatures (≥600 deg C) indicated significant inter-diffusion at the interface between the barrier layer and the film. Oxygen was found to be the major impurity in the films. XRD data indicated that the films formed 1:5 and 2:17 phases under different deposition conditions. The preliminary studies of these films using magnetic force microscopy revealed the presence of magnetic domains

Optical emission and mass spectroscopy of plasma processes in reactive DC pulsed magnetron sputtering of aluminium oxide

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Bočan, Jiří; Fitl, Přemysl; Lančok, Ján; Musil, Jindřich

2010-01-01

Roč. 12, č. 3 (2010), 697-700 ISSN 1454-4164 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : reactive magnetron sputtering * alumina * plasma spectroscopy * mass spectroscopy * optical emission spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

Influence of substrate temperature on the optical and electrical properties magnetron sputtering ITO films

International Nuclear Information System (INIS)

Khripunov, G.S.; Yurchenko, G.V.

1999-01-01

Electrical and optical properties of ITO films obtained at substrate temperature from 200 degree C to 500 degree C by magnetron sputtering of target 95% In 2 O 3 - 5% SnO 2 were studied. It was shown that the ITO film obtained at the substrate temperature 300 i N have optimum combination of the optical and electrical characteristics: resistivity 2.1 centre dot 10 -4 Ω cm, transmittance in visible spectral range about 88% at the thickness film 0.61 μ, factor of quality reaches 8.2 centre dot 10 -2 Ω 1

Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1992-05-01

Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Spatially resolved electron density and electron energy distribution function in Ar magnetron plasmas used for sputter-deposition of ZnO-based thin films

Energy Technology Data Exchange (ETDEWEB)

Maaloul, L.; Gangwar, R. K.; Morel, S.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

2015-11-15

Langmuir probe and trace rare gases optical emission spectroscopy were used to analyze the spatial structure of the electron density and electron energy distribution function (EEDF) in a cylindrical Ar magnetron plasma reactor used for sputter-deposition of ZnO-based thin films. While a typical Bessel (zero order) diffusion profile was observed along the radial direction for the number density of charged particles at 21 cm from the ZnO target, a significant rise of these populations with respect to the Bessel function was seen in the center of the reactor at 4 cm from the magnetron surface. As for the EEDF, it was found to transform from a more or less Maxwellian far from the target to a two-temperature Maxwellian with a depletion of high-energy electrons where magnetic field confinement effects become important. No significant change in the behavior of the electron density and EEDF across a wide range of pressures (5–100 mTorr) and self-bias voltages (115–300 V) was observed during magnetron sputtering of Zn, ZnO, and In{sub 2}O{sub 3} targets. This indicates that sputtering of Zn, In, and O atoms do not play a very significant role on the electron particle balance and electron heating dynamics, at least over the range of experimental conditions investigated.

Assessing the role of secondary electron emission on the characteristics of 6-cavity magnetrons with transparent cathode through particle-in-cell simulations

Energy Technology Data Exchange (ETDEWEB)

Qiu, Hao; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529-0246 (United States); Prasad, Sarita; Schamiloglu, Edl [Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131-0001 (United States); Ludeking, Lars [ATK Mission Systems, 8560 Cinderbed Road, Suite 700, Newington, Virginia 22122 (United States)

2014-05-21

Effects of secondary electron emission (SEE) on the performance of a 6-cavity relativistic magnetron with transparent cathodes are probed through particle-in-cell simulations. Appropriate relations for the secondary electron yield have been developed and used. For comparisons, separate simulations have been performed with- and without electron cascading. Simulation results seem to indicate SEE to be detrimental to the power output due to deviations in the starting trajectories of secondary electrons, and the reduced fraction with synchronized rotational velocity. A higher reduction in output power is predicted with electron cascading, though mode competition was not seen at the 0.65 T field. A possible solution to mitigating SEE in magnetrons for high power microwave applications would be to alter the surface properties of emitting electrodes through irradiation, which can lead to graphitic film formation.

Omnidirectional photonic band gap in magnetron sputtered TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Jena, S., E-mail: shuvendujena9@gmail.com [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Tokas, R.B.; Sarkar, P. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Misal, J.S.; Maidul Haque, S.; Rao, K.D. [Photonics & Nanotechnology Section, BARC-Vizag, Autonagar, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam 530 012 (India); Thakur, S.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

2016-01-29

One dimensional photonic crystal (1DPC) of TiO{sub 2}/SiO{sub 2} multilayer has been fabricated by sequential asymmetric bipolar pulsed dc magnetron sputtering of TiO{sub 2} and radio frequency magnetron sputtering of SiO{sub 2} to achieve wide omnidirectional photonic band in the visible region. The microstructure and optical response of the TiO{sub 2}/SiO{sub 2} photonic crystal have been characterized by atomic force microscopy, scanning electron microscopy and spectrophotometry respectively. The surface of the photonic crystal is very smooth having surface roughness of 2.6 nm. Reflection and transmission spectra have been measured in the wavelength range 300 to 1000 nm for both transverse electric and transverse magnetic waves. Wide high reflection photonic band gap (∆ λ = 245 nm) in the visible and near infrared regions (592–837 nm) at normal incidence has been achieved. The measured photonic band gap (PBG) is found well matching with the calculated photonic band gap of an infinite 1DPC. The experimentally observed omnidirectional photonic band 592–668 nm (∆ λ = 76 nm) in the visible region with band to mid-band ratio ∆ λ/λ = 12% for reflectivity R > 99% over the incident angle range of 0°–70° is found almost matching with the calculated omnidirectional PBG. The omnidirectional reflection band is found much wider as compared to the values reported in literature so far in the visible region for TiO{sub 2}/SiO{sub 2} periodic photonic crystal. - Highlights: • TiO{sub 2}/SiO{sub 2} 1DPC has been fabricated using magnetron sputtering technique. • Experimental optical response is found good agreement with simulation results. • Wide omnidirectional photonic band in the visible spectrum has been achieved.

Deposition of amino-rich thin films by RF magnetron sputtering of nylon

Energy Technology Data Exchange (ETDEWEB)

Kylian, O; Hanus, J; Choukourov, A; Kousal, J; SlavInska, D; Biederman, H, E-mail: ondrej.kylian@gmail.co [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Prague 8, 180 00 (Czech Republic)

2009-07-21

RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH{sub 2}/C value of 18% was observed in the N{sub 2}/H{sub 2} discharge, which leads to the surface exhibiting a high rate of protein adsorption. (fast track communication)

Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

International Nuclear Information System (INIS)

Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

2013-01-01

Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

Science.gov (United States)

Broadway, David

2015-01-01

The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

Science.gov (United States)

Broadway, David; Ramsey, Brian; Gubarev, Mikhail

2014-01-01

The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

International Nuclear Information System (INIS)

Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

2012-01-01

Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

Hard nanocrystalline Zr-B-C-N films with high electrical conductivity prepared by pulsed magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Vlček, J.; Steidl, P.; Kohout, J.; Čerstvý, R.; Zeman, P.; Prokšová, S.; Peřina, Vratislav

2013-01-01

Roč. 215, JAN 25 (2013), s. 186-191 ISSN 0257-8972. [39th International Conference on Metallurgical Coatings and Thin Films (ICMTF). San Diego, California, 23.04.2012-27.04.2012] Institutional support: RVO:61389005 Keywords : Zr-B-C-N films * nanocomposite materials * pulsed magnetron sputtering * hard ness * high electrical conductivity * osidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.199, year: 2013 http://www.sciencedirect.com/science/article/pii/S0257897212010584

Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

Directory of Open Access Journals (Sweden)

Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

2005-01-01

Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

Composite SiOx/fluorocarbon plasma polymer films prepared by r.f. magnetron sputtering of SiO2 and PTFE

Czech Academy of Sciences Publication Activity Database

Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

2006-01-01

Roč. 81, 1-4 (2006), s. 38-44 ISSN 0042-207X R&D Projects: GA MŠk OC 527.10; GA MŠk ME 553 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

2015-11-01

Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

Recent advances in Pt coating of microspheres by a batch magnetron sputtering process

International Nuclear Information System (INIS)

Hsieh, E.J.; Meyer, S.F.

1980-01-01

Some proposed inertial confinement fusion targets require high-Z, high density metal coatings on glass microspheres. Platinum, which satisfies the high-Z and density requirements, can be coated onto microspheres with a batch magnetron sputtering process incorporating oxygen as a dopant gas to prevent the microspheres from sticking. This paper outlines recent progress in three areas: First, the coating process has been improved; second, the oxygen content and resistivity of the oxygen doped platinum films are analyzed; and third, the roles oxygen may play in reducing microsphere sticking during sputtering are discussed in regard to cold welding, Van der Waals bonding, electrostatic sticking, and sintering

Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

Energy Technology Data Exchange (ETDEWEB)

Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N. [Consorzio RFX, Padova (Italy); Adámek, J. [Institute of Plasma Physics AS CR, Prague (Czech Republic)

2014-10-15

A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

International Nuclear Information System (INIS)

Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

2014-01-01

A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved

Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

International Nuclear Information System (INIS)

Huang, C.-L.; Hsu, C.-H.

2004-01-01

Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O 2 ) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different Ar/O 2 ratios and substrate temperatures have been investigated. The surface structural and morphological characteristics analyzed by x-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as Ar/O 2 ratio (100/0-80/20) and substrate temperature (350 deg. C-450 deg. C). The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the films increased with the increase of both the Ar partial pressure and the substrate temperature. At a Ar/O 2 ratio of 100/0, rf power level of 350 W and substrate temperature of 450 deg. C, the Zr 0.8 Sn 0.2 TiO 4 films with 6.44 μm thickness possess a dielectric constant of 42 (at 10 MHz), a dissipation factor of 0.065 (at 10 MHz), and a leakage current density of 2x10 -7 A/cm 2 at an electrical field of 1 kV/cm

In-situ TEM investigation of microstructural evolution in magnetron sputtered Al-Zr and Al-Zr-Si coatings during heat treatment

DEFF Research Database (Denmark)

Gudla, Visweswara Chakravarthy; Rechendorff, Kristian; Balogh, Zoltan Imre

2016-01-01

The magnetron sputtered Al–Zr and Al–Zr–Si coatings were heat treated in-situ in a transmission electron microscope as well as ex-situ to observe their annealing behaviour and phase transformations. The samples were heated up to a temperature of 550 °C and then cooled to room temperature. A layer...

Features of copper coatings growth at high-rate deposition using magnetron sputtering systems with a liquid metal target

Czech Academy of Sciences Publication Activity Database

Bleykher, G.A.; Borduleva, A.O.; Yuryeva, A.V.; Krivobokov, V.P.; Lančok, Ján; Bulíř, Jiří; Drahokoupil, Jan; Klimša, Ladislav; Kopeček, Jaromír; Fekete, Ladislav; Čtvrtlík, Radim; Tomáštík, Jan

2017-01-01

Roč. 324, Sep (2017), s. 111-120 ISSN 0257-8972 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : magnetron sputtering * evaporation * high-rate coating deposition * coating properties * Cu coatings Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.589, year: 2016

Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

Institute of Scientific and Technical Information of China (English)

ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

2012-01-01

Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ～0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

Deposition and characterization of TaAIN thin films by reactive magnetron sputtering; Deposicao e caracterizacao de filmes finos de TaAIN depositados por magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Hubler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), RS (Brazil); Silva Junior, A.H. da, E-mail: brito-g@hotmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), RS (Brazil)

2016-07-01

Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Straňák, V.; Hubička, Zdeněk; Čada, Martin; Bogdanowicz, R.; Wulff, H.; Helm, C.A.; Hippler, R.

2018-01-01

Roč. 51, č. 9 (2018), s. 1-12, č. článku 095205. ISSN 0022-3727 R&D Projects: GA ČR GA17-08389S Institutional support: RVO:68378271 Keywords : high power impulse magnetron sputtering (HiPIMS) * iron oxide thin films * wüstite * magnetite * maghemite * hematite Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics ) Impact factor: 2.588, year: 2016

Controlled formation of anatase and rutile TiO₂ thin films by reactive magnetron sputtering

OpenAIRE

Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

2015-01-01

We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

Vacuum system for applying reflective coatings on large-size optical components using the method of magnetron sputtering

Science.gov (United States)

Azerbaev, Alexander A.; Abdulkadyrov, Magomed A.; Belousov, Sergey P.; Ignatov, Aleksandr N.; Mukhammedzyanov, Timur R.

2016-10-01

Vacuum system for reflective coatings deposition on large-size optical components up to 4.0 m diameter using the method of magnetron sputtering was built at JSC LZOS. The technological process for deposition of reflective Al coating with protective SiO2 layer was designed and approved. After climatic tests the lifetime of such coating was estimated as 30 years. Uniformity of coating thickness ±5% was achieved on maximum diameter 4.0 m.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

OpenAIRE

Birkett, Martin; Penlington, Roger

2016-01-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the ...

Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

Science.gov (United States)

Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

2015-01-01

For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

Mechanical properties of nanocrystalline palladium prepared by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Castrup, Anna; Hahn, Horst [Forschungszentrum Karlsruhe (Germany); Technical University of Darmstadt (Germany); Scherer, Torsten; Ivanisenko, Yulia; Choi, In-Suk; Kraft, Oliver [Forschungszentrum Karlsruhe (Germany)

2009-07-01

Nanocrystalline metals and alloys with grain sizes well below 100 nm often demonstrate unique deformation behaviour and therefore attract a great interest in material science. The understanding of deformation mechanisms operating in nanocrystalline materials is important to predict their mechanical properties. In the present study Pd films of 1{mu}m thickness were prepared using UHV rf magnetron sputtering on dog bone shaped Kapton substrates and on Si/SiO2 wafers. The films were sputtered using multilayer technology with an individual layer thickness of 10 nm. This resulted in grain sizes of about 20 nm. Initial microstructure and texture were characterized using conventional XRD measurements and transmission electron microscopy (TEM) in both cross section- and plane view. The mechanical properties were investigated using tensile testing and nanoindentation at several strain rates. An increased hardness and strength as compared to coarse grained Pd was observed, as well as high strain rate sensitivity. The microstructure in the gauge section after tensile testing was again analyzed using TEM in order to reveal signatures of deformation mechanisms like dislocation motion or twinning.

Spokes and charged particle transport in HiPIMS magnetrons

International Nuclear Information System (INIS)

Brenning, N; Lundin, D; Minea, T; Vitelaru, C; Costin, C

2013-01-01

Two separate scientific communities are shown to have studied one common phenomenon, azimuthally rotating dense plasma structures, also called spokes, in pulsed-power E × B discharges, starting from quite different approaches. The first body of work is motivated by fundamental plasma science and concerns a phenomenon called the critical ionization velocity, CIV, while the other body of work is motivated by the applied plasma science of high power impulse magnetron sputtering (HiPIMS). Here we make use of this situation by applying experimental observations, and theoretical analysis, from the CIV literature to HiPIMS discharges. For a practical example, we take data from observed spokes in HiPIMS discharges and focus on their role in charged particle transport, and in electron energization. We also touch upon the closely related questions of how they channel the cross-B discharge current, how they maintain their internal potential structure and how they influence the energy spectrum of the ions? New particle-in-cell Monte Carlo collisional simulations that shed light on the azimuthal drift and expansion of the spokes are also presented. (paper)

Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

2008-10-01

Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

2008-01-01

Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

Directory of Open Access Journals (Sweden)

Till Jurgeleit

2017-10-01

Full Text Available Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ

Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

Science.gov (United States)

Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

2017-05-01

As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

The Analysis of Distribution of Thickness of ThinFilm Coating During the Magnetron Sputtering on Systems with Planetary Movement of Substrate

Directory of Open Access Journals (Sweden)

H. R. Sagatelyan

2014-01-01

Full Text Available The article subject is a thin-film coating process using ion-plasma sputter deposition systems with magnetron sputtering targets. To improve coating thickness evenness of parts various manufacturers equip their systems with mechanisms for moving the coating parts, and sometimes the magnetrons. More specifically, the article concerns the ion-plasma sputtering process using a system equipped with a mechanism for providing a planetary movement of the coating parts in the plane perpendicular to the planes of two sputtering targets.The purpose of this work was to improve a distribution of the coating thickness evenness on the sputtering surface of the part. It is achieved through selection of the best combinations of kinematic and geometric factors that characterize a particular sputtering operation, depending on the size and position of the surface to be coated. These factors include a ratio between directions and frequencies of the self-rotation of satellite planetary gear, which holds a work piecesubstrate, and the translational motion i.e. planetary carrier rotation to carry the satellite; the angles of planes of the right and left magnetrons with respect to the system frontal plane. Since there is, essentially, a lack of mathematical models to perform the appropriate calculations for the considered type of system designs, a more specific aim of the article is to develop a technique to evaluate the uneven thickness of coatings provided by the systems of this type.To achieve this more specific purpose the analytical technique had been used, applying the postulates of analytical geometry and theoretical mechanics. The main results of the research described in the article are as follows:- mathematical models of dependencies of geometric and kinematic parameters, changing during the sputtering process and characterizing each considered point on the surface of the work piece, on the current position of the work piece in the structure of the planetary

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

Science.gov (United States)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

Science.gov (United States)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

International Nuclear Information System (INIS)

Tamilselvan, N.; Thilakan, Periyasamy

2013-01-01

ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

Fabricating Pinhole-Free YSZ Sub-Microthin Films by Magnetron Sputtering for Micro-SOFCs

Directory of Open Access Journals (Sweden)

T. Hill

2011-01-01

Full Text Available Submicron thin yttria stabilized zirconia (YSZ films were prepared on a variety of substrates with different surface morphologies by magnetron sputtering followed by thermal oxidation. Pinholes were observed in the films deposited on nanoporous alumina substrates. Initial dense Y/Zr films developed nanocracks after thermal oxidation on smooth Si wafer substrates. At optimal sputtering and oxidation conditions, smooth and crack/pore-free films were achieved on Si wafer substrates. The thin YSZ films exhibited fully ionic conduction with ionic conductivities, and activation energy corroborated well with the values from commercial YSZ plates. The thin YSZ films can be utilized in Solid Oxide Fuel Cells (SOFCs for intermediate temperature operations.

Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

International Nuclear Information System (INIS)

Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

2012-01-01

Growth of amorphous SiO 2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O - ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO 2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O 2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

Current control of the electron beam formed in the magnetron gun with a secondary-emission cathode

International Nuclear Information System (INIS)

Dovbnya, A.N.; Reshetnyak, N.G.; Zakutin, V.V.; Chertishchev, I.A.; Romas'ko, V.P.; Dovbnyan, N.A.

2013-01-01

Data are reported on electron beam generation and beam current control in two types of secondary-emission cathode magnetron guns. The influence of the magnetic field value and field distribution on the formation of the beam and its parameters has been investigated in the electron energy range between 20 and 150 keV. The influence of local magnetic field variations on the cathode and the electron beam characteristics has been studied. The possibility to control the electron beam current in various ways has been demonstrated

Compositionally graded SiCu thin film anode by magnetron sputtering for lithium ion battery

Energy Technology Data Exchange (ETDEWEB)

Polat, B.D., E-mail: bpolat@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Eryilmaz, O.L. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Keleş, O., E-mail: ozgulkeles@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Erdemir, A. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Amine, K. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

2015-12-01

Compositionally graded and non-graded composite SiCu thin films were deposited by magnetron sputtering technique on Cu disks for investigation of their potentials in lithium ion battery applications. The compositionally graded thin film electrodes with 30 at.% Cu delivered a 1400 mAh g{sup −1} capacity with 80% Coulombic efficiency in the first cycle and still retained its capacity at around 600 mAh g{sup −1} (with 99.9% Coulombic efficiency) even after 100 cycles. On the other hand, the non-graded thin film electrodes with 30 at.% Cu exhibited 1100 mAh g{sup −1} as the first discharge capacity with 78% Coulombic efficiency but the cycle life of this film degraded very quickly, delivering only 250 mAh g{sup −1} capacity after 100th cycles. Not only the Cu content but also the graded film thickness were believed to be the main contributors to the much superior performance of the compositionally graded SiCu films. We also believe that the Cu-rich region of the graded film helped reduce internal stress build-up and thus prevented film delamination during cycling. In particular, the decrease of Cu content from interface region to the top of the coating reduced the possibility of stress build-up across the film during cycling, thus leading to a high electrochemical performance.b - Highlights: • Highly adherent SiCu films are deposited by magnetron sputtering. • Compositionally graded SiCu film is produced and characterized. • Decrease of Cu content diverted the propagation of stress in the anode. • Cu rich layer at the bottom improves the adherence of the film.

Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO{sub 2}/TiWO{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan [Department of Electronic Engineering, National Quemoy University, 1 Daxue Road, Jinning Township, Kinmen 89250, Taiwan, ROC (China); Zhao, Yu-Xiang [Department of Computer Science and Information Engineering, National Quemoy University, Taiwan, ROC (China); Chang, Julian; Yang, Shu-Yi [Department of Applied English, National Quemoy University, Taiwan, ROC (China); Han, Sheng, E-mail: shenghan@nutc.edu.tw [Center for General Education, National Taichung University of Science and Technology, 129 San-min Road, Section 3, Taichung 40401, Taiwan, ROC (China)

2016-08-15

Highlights: • TiO{sub 2}/TiWO{sub x} films were fabricated by a bipolar pulsed magnetron sputtering apparatus. • Titanium oxide being sputtered tungsten enhanced the highly oriented of TiO{sub 2} (1 0 1) plane of the specimen assemblies. • The mechanism WO{sub 3}(h{sup +}, e{sup −})/TiO{sub 2}(h{sup +}, e{sup −}) → WO{sub 3}(e{sup −})/TiO{sub 2}(h{sup +}) shows the higher hydrophilicity and lower contact angle. - Abstract: Titanium oxide films were formed by sputtering and then TiWO{sub x} films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO{sub 2} (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole–electron recombination, enhancing hydrophilicity and reducing the contact angle.

Superhydrophobic photocatalytic PTFE – Titania coatings deposited by reactive pDC magnetron sputtering from a blended powder target

Energy Technology Data Exchange (ETDEWEB)

Ratova, Marina, E-mail: marina_ratova@hotmail.com; Kelly, Peter J.; West, Glen T.

2017-04-01

The production of photocatalytic coatings with superhydrophobic properties, as opposed to the conventional hydrophilic properties, is desirable for the prevention of adhesion of contaminants to photocatalytic surfaces with subsequent deterioration of photocatalytic properties. In this work polytetrafluoroethylene (PTFE) – TiO{sub 2} composite thin films were deposited using a novel method of reactive pulsed direct current (pDC) magnetron sputtering of a blended PTFE – titanium oxide powder target. The surface characteristics and photocatalytic properties of the deposited composite coatings were studied. The as-deposited coatings were annealed at 523 K in air and analysed with Raman spectroscopy, optical profilometry and scanning electron microscopy. Hydrophobicity was assessed though measurements of water contact angles, and photocatalytic properties were studied via methylene blue dye degradation under UV irradiation. It was found that variations of gas flow and, hence, process pressures allowed deposition of samples combining superhydrophobicity with stable photocatalytic efficiency under UV light irradiation. Reversible wettability behaviour was observed with the alternation of light-dark cycles. - Highlights: • PTFE-TiO{sub 2} coatings were deposited by pDC reactive magnetron sputtering. • Blended powder target was used for coatings deposition. • Deposited coatings combined superhydrophobic and photocatalytic properties. • Under UV irradiation coatings exhibited reversible wettability.

Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

Energy Technology Data Exchange (ETDEWEB)

Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

2015-06-01

There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

Bonding and bio-properties of hybrid laser/magnetron Cr-enriched DLC layers

Energy Technology Data Exchange (ETDEWEB)

Jelinek, Miroslav, E-mail: jelinek@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3105, 27201 Kladno (Czech Republic); Zemek, Josef [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Vandrovcová, Marta; Bačáková, Lucie [Institute of Physiology of the Czech Academy of Sciences of the Czech Republic, v.v.i., Videnska 1083, 14220 Prague 4 (Czech Republic); Kocourek, Tomáš; Remsa, Jan; Písařík, Petr [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3105, 27201 Kladno (Czech Republic)

2016-01-01

Chromium-enriched diamond-like carbon (DLC) layers were prepared by a hybrid technology using a combination of pulsed laser deposition (PLD) and magnetron sputtering. XRD revealed no chromium peaks, indicating that the layers are mostly amorphous. Carbon (sp{sup 2} and sp{sup 3} bonds) and chromium bonds were determined by XPS from C 1s, O 1s, and Cr 2p photoelectron peaks. Depending on the deposition conditions, the concentration of Cr in DLC layers moved from zero to 10 at.% for as-received sample surfaces, and to about 31 at.% after mild sputter-cleaning by argon ion cluster beam. It should be noted that the most stable Cr{sup 3+} bonding state is in Cr{sub 2}O{sub 3} and Cr(OH){sub 3}, and that there is the toxic Cr{sup 6+} state in CrO{sub 3}. The surface content of hexavalent chromium in the Cr 2p3/2 spectra is rather low, but discernible. The population density of Saos-2 cells was the highest in samples containing higher concentrations of chromium 7.7 and 10 at.%. This means that higher concentrations of chromium supported the cell adhesion and proliferation. In addition, as revealed by a LIVE/DEAD viability/cytotoxicity kit, the cells on all Cr-containing samples maintained high viability (96 to 99%) on days 1 and 3 after seeding. However, this seemingly positive cell behavior could be associated with the risk of dedifferentiation and oncogenic transformation of cells. - Highlights: • DLC and chromium-enriched DLC layers were prepared by hybrid laser–magnetron deposition. • The content of chromium in DLC varied up to 10 at.% (31 at.% after ion beam sputtering). • The surface content of toxic hexavalent chromium in the Cr 2p3/2 spectra is rather low but discernible. • Higher concentrations of chromium supported the cell adhesion and proliferation. • Cells on all Cr-containing samples maintained high viability (96 to 99%).

Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering

International Nuclear Information System (INIS)

Wang, Fei; Chen, Xin-liang; Geng, Xin-hua; Zhang, De-kun; Wei, Chang-chun; Huang, Qian; Zhang, Xiao-dan; Zhao, Ying

2012-01-01

Highlights: ► Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. ► The directly deposited HGZO thin films present rough crater-type surface morphology. ► Typical HGZO thin film exhibits a high electron mobility of 41.3 cm 2 /V s and a relative low sheet resistance of ∼7.0 Ω. ► These HGZO thin films have high optical transmittances in the visible and near infrared region (∼380–1100 nm). ► A gradient H 2 growth method for fabricating HGZO thin films has been proposed in magnetron sputtering process. - Abstract: The main purposes are to obtain high quality transparent conductive oxide (TCO) based on zinc oxide (ZnO) thin films with high optical transparency in the visible and near infrared spectral range, high electrical conductivity and good light-scattering capability to enhance the path of the light inside the Si-based thin film solar cells. Natively textured surface hydrogenated gallium-doped ZnO (HGZO) thin films have been deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. These natively textured HGZO thin films exhibit high optical transmittance (over 80%) in the visible and near infrared region (λ = 380–1100 nm) and excellent electrical properties. The optimized HGZO thin film with crater-type textured surface obtained at the hydrogen flow rate of ∼2.0 sccm exhibits a high electron mobility of 41.3 cm 2 /V s and a relatively low sheet resistance of ∼7.0 Ω. The influences of hydrogen flow rates on the surface morphology, electrical and optical properties of HGZO thin films were investigated in detail. In addition, we put forward a method of gradient H 2 growth technique for fabricating HGZO thin films so as to obtain rough surface structure with good light-scattering capability and high electrical conductivity. “Crater-like” surface feature size and optical transmittance

As(III) Removal from Drinking Water by Carbon Nanotube Membranes with Magnetron-Sputtered Copper: Performance and Mechanisms.

Science.gov (United States)

Luan, Hongyan; Zhang, Quan; Cheng, Guo-An; Huang, Haiou

2018-06-07

Current approaches for functionalizing carbon nanotubes (CNTs) often utilize harsh chemical conditions, and the resulting harmful wastes can cause various environmental and health concerns. In this study, magnetron sputtering technique is facilely employed to functionalize CNT membranes by depositing Cu onto premade CNT membranes without using any chemical treatment. A comparative evaluation of the substrate polymeric membrane (mixed cellulose ester (MCE)), MCE sputtered with copper (Cu/MCE), the pristine CNT membrane (CNT), and CNT membrane sputtered with Cu (Cu/CNT) shows that Cu/CNT possesses mechanically stable structures and similar membrane permeability as MCE. More importantly, Cu/CNT outperforms other membranes with high As(III) removal efficiency of above 90%, as compared to less than 10% by MCE and CNT, and 75% by Cu/MCE from water. The performance of Cu/CNT membranes for As(III) removal is also investigated as a function of ionic strength, sputtering time, co-existing ions, solution pH, and the reusability. Further characterizations of As speciation in the filtrate and on Cu/CNT reveal that arsenite removal by Cu/CNT possibly began with Cu-catalyzed oxidation of arsenite to arsenate, followed by adsorptive filtration of arsenate by the membrane. Overall, this study demonstrates that magnetron sputtering is a promising greener technology for the productions of metal-CNT composite membranes for environmental applications.

UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

Science.gov (United States)

Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

2017-12-26

ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Growth of polycrystalline Pr_2NiO_4_+_δ coating on alumina substrate by RF magnetron co-sputtering from composite targets

International Nuclear Information System (INIS)

Sediri, A.; Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B.; Del Campo, L.; Echegut, P.; Laffez, P.

2016-01-01

Polycrystalline Pr_2NiO_4_+_δ coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr_2NiO_4_+_δ phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm"-"1 showed an emissivity of ε ≈ 0.8. - Highlights: • Pr_2NiO_4_+_δ coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

Czech Academy of Sciences Publication Activity Database

Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

2018-01-01

Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges

Czech Academy of Sciences Publication Activity Database

Straňák, V.; Wulff, H.; Bogdanowicz, R.; Drache, S.; Hubička, Zdeněk; Čada, Martin; Tichý, M.; Hippler, R.

2011-01-01

Roč. 64, 2-3 (2011), 427-435 ISSN 1434-6060 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA ČR GP202/09/P159; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Grant - others:AVČR(CZ) M100100915 Institutional research plan: CEZ:AV0Z10100522 Keywords : dual magnetron * Ti-Cu film * HiPIMS * diagnostics * ion energy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.476, year: 2011

Synthesis of nanofibrous ZnO by magnetron sputtering and its integration in dye-sensitized solar cells

International Nuclear Information System (INIS)

Ghimpu, L.; Tiginyanu, I.; Pauporte, T.; Guerin, V.M.; Lupan, O.

2013-01-01

This work demonstrates a cost-effective synthesis of nanofibrous ZnO layers by a magnetron sputtering. We present the results of layer characterization by scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectrometry, Raman spectroscopy, and photoluminescence which are indicative of good structural properties of the layers. The nanofibrous ZnO layers proves good structural properties offering a new nanomaterial for dye-sensitized solar cells (DSCs) application. Their successful integration in DSC for solar energy conversion is demonstrated by impedance spectroscopy, and photo-current-voltage (J-V) studies.

Coating multilayer material with improved tribological properties obtained by magnetron sputtering

Science.gov (United States)

Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

2017-02-01

This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

NARCIS (Netherlands)

Yan, L.T.; Schropp, R.E.I.

2011-01-01

Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

International Nuclear Information System (INIS)

Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

2010-01-01

Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

OpenAIRE

BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

2013-01-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

Time-resolved tunable diode laser absorption spectroscopy of excited argon and ground-state titanium atoms in pulsed magnetron discharges

Czech Academy of Sciences Publication Activity Database

Sushkov, V.; Do, H.T.; Čada, Martin; Hubička, Zdeněk; Hippler, R.

2013-01-01

Roč. 22, č. 1 (2013), 1-10 ISSN 0963-0252 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA ČR GAP108/12/2104 Institutional research plan: CEZ:AV0Z10100522 Keywords : absorption spectroscopy * diode laser * magnetron * argon metastable * HiPIMS * titanium * time-resolved Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.056, year: 2013 http://iopscience.iop.org/0963-0252/22/1/015002/

Operational limit of a planar DC magnetron cluster source due to target erosion

International Nuclear Information System (INIS)

Rai, A.; Mutzke, A.; Bandelow, G.; Schneider, R.; Ganeva, M.; Pipa, A.V.; Hippler, R.

2013-01-01

The binary collision-based two dimensional SDTrimSP-2D model has been used to simulate the erosion process of a Cu target and its influence on the operational limit of a planar DC magnetron nanocluster source. The density of free metal atoms in the aggregation region influences the cluster formation and cluster intensity during the target lifetime. The density of the free metal atoms in the aggregation region can only be predicted by taking into account (i) the angular distribution of the sputtered flux from the primary target source and (ii) relative downwards shift of the primary source of sputtered atoms during the erosion process. It is shown that the flux of the sputtered atoms smoothly decreases with the target erosion

Deposition and characterization of ZrMoN thin films by reactive magnetron sputtering

International Nuclear Information System (INIS)

Fontes Junir, A.S.; Felix, L.C.; Oliveira, G.B. de; Fernandez, D.R.; Carvalho, R.G.; Tentardini, E.K.; Silva Junior, A.H. da

2016-01-01

Thin films of ZrMoN were deposited by magnetron reactive sputtering technique in order to study the molybdenum influence on the mechanical properties and oxidation resistance of these coatings. Three thin films with molybdenum concentrations from 25 to 40 at.% were selected. The displacement of characteristic peaks of ZrN where identified by GIXRD results of films with larger Mo content. This result is indicative of the Mo accommodation in the lattice structure. Hardness tests revealed favorable results with values up to 33 GPa. Oxidation tests showed that ZrN oxidized at 500 °C with a monoclinic ZrO 2 and tetragonal formation; whereas the thin films with Mo addition impeded the formation of the monoclinic ZrO 2 phase at partial oxidation. (author)

Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Verma, M. [Department of Chemistry, IIT Roorkee, Roorkee-247667, India and Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee-247667 (India); Gupta, V. K. [Department of Chemistry, IIT Roorkee, Roorkee-247667 (India); Gautam, Y. K.; Dave, V.; Chandra, R. [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee-247667 (India)

2014-01-28

Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

Low-cost ZnO:Al transparent contact by reactive rotatable magnetron sputtering for Cu(In,Ga)Se2 solar modules

International Nuclear Information System (INIS)

Menner, R.; Hariskos, D.; Linss, V.; Powalla, M.

2011-01-01

Sputtering ZnO as transparent front contact (TCO) is standard in today's industrial scale Cu(In,Ga)Se 2 (CIGS) module manufacturing. Although innovative concepts like rotatable magnetron sputtering from ceramic targets have been realised, costs are still high due to expensive ceramic targets. Significant cost reductions are expected by using reactive sputtering of metallic targets. Therefore, ZSW and industrial partners investigated the reactive sputtering of Al-doped zinc oxide (ZAO) as TCO on CIGS absorbers of high quality and industrial relevance. The reactive DC sputtering from rotatable magnetron targets is controlled in the transition mode by adjusting oxygen flow and discharge voltage. Optimisation leads to ZAO films with a TCO quality nearly comparable to standard films deposited by DC ceramic sputtering. Scanning electron microscopy, X-ray diffraction, and Hall analyses of the ZAO films are performed. Medium-size CIGS modules are coated with reactively sputtered ZAO, resulting in 12.8% module efficiency and surpassing the efficiency of the ceramic witness device. Cd-free buffered devices are also successfully coated with reactive TCO. Damp heat stability according to IEC61646 is met by all reactively sputtered devices.

Evolution of film temperature during magnetron sputtering

International Nuclear Information System (INIS)

Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

2006-01-01

We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

Textured ZnO thin films by RF magnetron sputtering

CERN Document Server

Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

1999-01-01

Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

Science.gov (United States)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

DEFF Research Database (Denmark)

Hartmann, Hannes; Popok, Vladimir; Barke, Ingo

2012-01-01

The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied...

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

Science.gov (United States)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

International Nuclear Information System (INIS)

Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

2006-01-01

The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

DEFF Research Database (Denmark)

Sillassen, M.; Eklund, P.; Sridharan, M.

2009-01-01

Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr–Y (80/20 at. %) alloy target. Films deposited at floating potential had a texture. Single-line profile analysis of the 111 x.......5% at bias voltages of −175 and −200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in......-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries...

Structural and morphological properties of ITO thin films grown by magnetron sputtering

Science.gov (United States)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2015-10-01

Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

2015-11-01

Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

Science.gov (United States)

Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

2018-02-01

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

Chromium-doped DLC for implants prepared by laser-magnetron deposition.

Science.gov (United States)

Jelinek, Miroslav; Kocourek, Tomáš; Zemek, Josef; Mikšovský, Jan; Kubinová, Šárka; Remsa, Jan; Kopeček, Jaromir; Jurek, Karel

2015-01-01

Diamond-like carbon (DLC) thin films are frequently used for coating of implants. The problem of DLC layers lies in bad layer adhesion to metal implants. Chromium is used as a dopant for improvement of adhesion of DLC films. DLC and Cr-DLC layers were deposited on silicon, Ti6Al4V and CoCrMo substrates by a hybrid technology using combination of pulsed laser deposition (PLD) and magnetron sputtering. The topology of layers was studied using SEM, AFM and mechanical profilometer. Carbon and chromium content and concentration of trivalent and toxic hexavalent chromium bonds were determined by XPS and WDS. It follows from the scratch tests that Cr doping improved adhesion of DLC layers. Ethylene glycol, diiodomethane and deionized water were used to measure the contact angles. The surface free energy (SFE) was calculated. The antibacterial properties were studied using Pseudomonas aeruginosa and Staphylococcus aureus bacteria. The influence of SFE, hydrophobicity and surface roughness on antibacterial ability of doped layers is discussed. Copyright © 2014 Elsevier B.V. All rights reserved.

PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

Directory of Open Access Journals (Sweden)

Roberto Bernal Correa

2014-01-01

Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

Helium-Charged La-Ni-Al Thin Films Deposited by Magnetron Sputtering

International Nuclear Information System (INIS)

Shi Liqun; Chen Deming; Xu Shilin; Liu Chaozhu; Hao Wanli; Zhou Zhuyin

2005-01-01

An advanced implantation of low energy helium-4 atoms during the La-Ni-Al film growth by adopting magnetron sputtering with Ar/He mixture gases is discussed. Both proton backscattering spectroscopy (PBS) and elastic recoil detection (ERD) analyses were adopted to measure helium concentration of the films and distribution in the near-surface region. Helium atoms with a high concentration incorporate evenly in deposited film. The introduction of the helium with no extra irradiation damage is expected by choosing suitable deposition conditions. It was found that amorphous and crystalline LaNi 5 -type structures can be achieved when sputtered with pure Ar and Ar/He mixture gases at room temperature, respectively. Thermal desorption experiments proposes that a part of hydrogen atoms are bound to trapped helium at crystal and releases together with helium. Only a small fraction of helium is released from the helium-vacancy clusters in lower temperature range and most of helium is released from small size helium bubbles in the high temperature range

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

Energy Technology Data Exchange (ETDEWEB)

Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

2015-09-30

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

Physical–chemical and biological behavior of an amorphous calcium phosphate thin film produced by RF-magnetron sputtering

International Nuclear Information System (INIS)

Santos, Euler A. dos; Moldovan, Simona; Mateescu, Mihaela; Faerber, Jacques; Acosta, Manuel; Pelletier, Hervé; Anselme, Karine; Werckmann, Jacques

2012-01-01

This work evaluates the thermal reactivity and the biological reactivity of an amorphous calcium phosphate thin film produced by radio frequency (RF) magnetron sputtering onto titanium substrates. The analyses showed that the sputtering conditions used in this work led to the deposition of an amorphous calcium phosphate. The thermal treatment of this amorphous coating in the presence of H 2 O and CO 2 promoted the formation of a carbonated HA crystalline coating with the entrance of CO 3 2− ions into the hydroxyl HA lattice. When immersed in culture medium, the amorphous and carbonated coatings exhibited a remarkable instability. The presence of proteins increased the dissolution process, which was confirmed by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Moreover, the carbonated HA coating induced precipitation independently of the presence of proteins under dynamic conditions. Despite this surface instability, this reactive calcium phosphate significantly improved the cellular behavior. The cell proliferation was higher on the Ticp than on the calcium phosphate coatings, but the two coatings increased cellular spreading and stress fiber formation. In this sense, the presence of reactive calcium phosphate coatings can stimulate cellular behavior. - Highlights: ► Functionalization of Ti with reactive CaP thin film by RF-magnetron sputtering. ► De-hydroxylation facilitating the insertion of CO 3 2− into the HA lattice. ► High surface reactivity in the presence of culture medium. ► Cell behavior improved by the presence of reactive films.

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

International Nuclear Information System (INIS)

Polášek, J.; Mašek, K.; Marek, A.; Vyskočil, J.

2015-01-01

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O"− ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

Science.gov (United States)

Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

2009-07-01

RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

OpenAIRE

Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

2017-01-01

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

Studies on the cross-magnetron effect in the reactive indium tin oxide deposition. Effects of an inhomogeneous plasma distribution on the coating properties in dynamic and static coating by means of a pulsed dual magnetron

International Nuclear Information System (INIS)

Kleinhempel, Ronny

2008-01-01

In the present thesis the reactive ITO deposition process under application of metallic In:Sn targets is intensively studied. The coating deposition pursues at a symmetric bipolarly pulsed dual magnetron both on resting and moving substrates. The thesis comprehends two partial fields. On the one hand the dynamic deposition process was comprehensively characterized at an near-industry test facility and successfully transformed by means of its physical parameters to an industrial coating facility. On the other hand static depositions were performed. These allow the analysis of the lateral distribution of the functional coating properties. By this a correlation to the lateral distributions of the measured plasma parameters could be elaborated [de

Morphological analysis of TiB2 thin film prepared by rf magnetron sputtering

International Nuclear Information System (INIS)

Dai Wei; Zhang Tongjun; Yang Junyou; Sun Rongxing; Xu Juliang

2008-01-01

Superhard TiB 2 thin films were deposited on steel substrates using the radio-frequency magnetron-sputtering technique with a low normalized substrate temperature (0.1 s /T m 2 thin films were overstoichiometric and that the diffusion of Ti and B atoms on the substrate surface was greatly improved at a temperature of 350 deg. C. Moreover, a new dense structure, named the ''equiaxed'' grain structure, was observed by FESEM at this substrate temperature. GIXRD was carried out at different directions with same the grazing-incidence method and the variation of diffraction intensity of the nonrandom textured grains was confirmed. Combined with FESEM and AES analysis, it is suggested that the equiaxed grain structure was located in zone 2 at the normalized substrate temperature as low as 0.18

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

2009-01-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

Design of a double-anode magnetron-injection gun for the W-band gyrotron

Science.gov (United States)

Jang, Kwang Ho; Choi, Jin Joo; So, Joon Ho

2015-07-01

A double-anode magnetron-injection gun (MIG) was designed. The MIG is for a W-band 10-kW gyrotron. Analytic equations based on adiabatic theory and angular momentum conservation were used to examine the initial design parameters such as the cathode angle, and the radius of the beam emitting surface. The MIG's performances were predicted by using an electron trajectory code, the EGUN code. The beam spread of the axial velocity, Δvz/vz, obtained from the EGUN code was observed to be 1.34% at α = 1.3. The cathode edge emission and the thermal effect were modeled. The cathode edge emission was found to have a major effect on the velocity spread. The electron beam's quality was significantly improved by affixing non-emissive cylinders to the cathode.

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Science.gov (United States)

Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

2009-10-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

Structural and tribological properties of CrTiAlN coatings on Mg alloy by closed-field unbalanced magnetron sputtering ion plating

International Nuclear Information System (INIS)

Shi Yongjing; Long Siyuan; Yang Shicai; Pan Fusheng

2008-01-01

In this paper, a series of multi-layer hard coating system of CrTiAlN has been prepared by closed-field unbalanced magnetron sputtering ion plating (CFUBMSIP) technique in a gas mixture of Ar + N 2 . The coatings were deposited onto AZ31 Mg alloy substrates. During deposition step, technological temperature and metallic atom concentration of coatings were controlled by adjusting the currents of different metal magnetron targets. The nitrogen level was varied by using the feedback control of plasma optical emission monitor (OEM). The structural, mechanical and tribological properties of coatings were characterized by means of X-ray photoelectron spectrometry, high-resolution transmission electron microscope, field emission scanning electron microscope (FESEM), micro-hardness tester, and scratch and ball-on-disc tester. The experimental results show that the N atomic concentration increases and the oxide on the top of coatings decreases; furthermore the modulation period and the friction coefficient decrease with the N 2 level increasing. The outstanding mechanical property can be acquired at medium N 2 level, and the CrTiAlN coatings on AZ31 Mg alloy substrates outperform the uncoated M42 high speed steel (HSS) and the uncoated 316 stainless steel (SS)

Understanding of hybrid PVD–PECVD process with the aim of growing hard nc-TiC/a-C:H coatings using industrial devices with a rotating cylindrical magnetron

Czech Academy of Sciences Publication Activity Database

Žemlička, R.; Jílek, M.; Vogl, P.; Souček, P.; Buršíková, V.; Buršík, Jiří; Vašina, P.

2014-01-01

Roč. 255, 25 September (2014), s. 118-123 ISSN 0257-8972 Institutional support: RVO:68081723 Keywords : nanocomposite * magnetron sputtering * process control Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

2015-01-01

Roč. 7, č. 4 (2015), s. 321-324 ISSN 2164-6627 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * amorphous carbon * magnetron sputtering * CVD * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

International Nuclear Information System (INIS)

Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

2017-01-01

Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

Deposition and characterization of TaAIN thin films by reactive magnetron sputtering

International Nuclear Information System (INIS)

Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K.; Silva Junior, A.H. da

2016-01-01

Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

Directory of Open Access Journals (Sweden)

Weimin Li

2016-01-01

Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

2014-07-01

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

Research of the surface properties of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene modified with radio-frequency magnetron sputtering for medical application

International Nuclear Information System (INIS)

Tverdokhlebov, S.I.; Bolbasov, E.N.; Shesterikov, E.V.; Malchikhina, A.I.; Novikov, V.A.; Anissimov, Y.G.

2012-01-01

Highlights: ► A method for surface modification of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene using radio-frequency magnetron sputtering of hydroxyapatite target is proposed. ► It is demonstrated that the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene surface becomes hydrophilic as the result of the modification. ► It is shown, using atomic force microscopy that the surface potential biases into positive value field and the surface roughness parameters increase as the result of the modification. ► In vitro testing has not found bio-toxicity of investigated surfaces - Abstract: The properties of thin calcium-phosphate coatings formed by radio-frequency magnetron sputtering of a solid target made from hydroxyapatite on the surface of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene (VDF–TeFE) were investigated. Atomic force microscopy energy dispersive analysis and optical goniometry showed that deposited calcium-phosphate coatings change significantly the morphological, electrical, chemical, and contact properties of the surface of the initial polymeric substrates. These modified surfaces widen the scope of medical application of the thermoplastic copolymer.

Growth of polycrystalline Pr{sub 2}NiO{sub 4+δ} coating on alumina substrate by RF magnetron co-sputtering from composite targets

Energy Technology Data Exchange (ETDEWEB)

Sediri, A., E-mail: amal.sediri@univ-tours.fr [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Del Campo, L.; Echegut, P. [CNRS, UPR 3079 CEMHTI, 45071 Orléans Cedex 2 (France); Laffez, P. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France)

2016-02-01

Polycrystalline Pr{sub 2}NiO{sub 4+δ} coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr{sub 2}NiO{sub 4+δ} phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm{sup -1} showed an emissivity of ε ≈ 0.8. - Highlights: • Pr{sub 2}NiO{sub 4+δ} coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

International Nuclear Information System (INIS)

Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

2012-01-01

Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

AlN/Al dual protective coatings on NdFeB by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Li Jinlong; Mao Shoudong; Sun Kefei [Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Li Xiaomin [Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050 (China); Song Zhenlun [Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)], E-mail: songzhenlun@nimte.ac.cn

2009-11-15

AlN/Al dual protective coatings were prepared on NdFeB by DC magnetron sputtering in a home-made industrial apparatus. Comparing with Al coating, AlN/Al coatings have a denser structure of an outmost AlN amorphous layer following an inner Al columnar crystal layer. The coatings and NdFeB substrate combine well, and moreover, there is occurrence of metallurgy bonding in the interface layer. Both Al and AlN/Al coatings have a good protective ability to NdFeB. Especially, the corrosion resistance of AlN/Al coated NdFeB is improved largely. AlN/Al and Al protective coatings not only do not deteriorate the magnetic properties of NdFeB, but contribute to their slight increase.

AlN/Al dual protective coatings on NdFeB by DC magnetron sputtering

International Nuclear Information System (INIS)

Li Jinlong; Mao Shoudong; Sun Kefei; Li Xiaomin; Song Zhenlun

2009-01-01

AlN/Al dual protective coatings were prepared on NdFeB by DC magnetron sputtering in a home-made industrial apparatus. Comparing with Al coating, AlN/Al coatings have a denser structure of an outmost AlN amorphous layer following an inner Al columnar crystal layer. The coatings and NdFeB substrate combine well, and moreover, there is occurrence of metallurgy bonding in the interface layer. Both Al and AlN/Al coatings have a good protective ability to NdFeB. Especially, the corrosion resistance of AlN/Al coated NdFeB is improved largely. AlN/Al and Al protective coatings not only do not deteriorate the magnetic properties of NdFeB, but contribute to their slight increase.

Photoelectron-spectroscopic and reactivity investigation of thin Pd-Sn films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Skala, T.; Veltruska, K.; Sedlacek, L.; Masek, K.; Matolinova, I.; Matolin, V.

2007-01-01

We have studied Pd-Sn layers with different composition prepared by magnetron sputtering. Layers were sputtered onto Al 2 O 3 and SiO 2 substrates and studied by X-ray photoelectron spectroscopy (XPS). Spectra confirmed that after vacuum annealing residual oxygen and carbon have been removed and bimetallic bonds have been created. The shift of Pd 3d 5/2 core level to higher binding energy followed by the peak narrowing in dependence on the composition was observed, accompanied by the shift of the Pd 4d in the valence band region, induced by hybridization of Pd-d and Sn-s,p states. Experiments carried out on a gas-flow reactor indicate increasing temperature of the CO oxidation with tin ratio in the alloy

Implementation and initial test result of a prototype solid state modulator for pulsed magnetron

International Nuclear Information System (INIS)

Dake, Vishal; Mangalvedekar, H.A.; Tillu, Abhijit; Dixit, Kavita P.; Sarukte, Hemant

2014-01-01

A solid-state modulator rated for 50 kV, 120A, 4μs and 250 Hz has been designed. The discharging circuit of the modulator is being tested at ∼ 33 kV, 40-80A, at a maximum pulse repetition rate of 30 pps. The paper discusses development and testing of prototype discharging circuit on resistive load and magnetron. The technique used for measurement of pulse transformer leakage inductance, distributed capacitance and stray primary circuit series inductance will also be discussed in detail. It is necessary to have Energy Storage Capacitors with low ESL for these applications (ESL < 40 nH). The method used for evaluating the ESL of locally available metalized polypropylene capacitors will also be presented. (author)

Implementation and initial test result of a prototype solid state modulator for pulsed magnetron

Energy Technology Data Exchange (ETDEWEB)

Dake, Vishal; Mangalvedekar, H.A., E-mail: vishaldake90@gmail.com [Veermata Jijabai Technological Institute, Mumbai (India); Tillu, Abhijit; Dixit, Kavita P.; Sarukte, Hemant [Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

A solid-state modulator rated for 50 kV, 120A, 4μs and 250 Hz has been designed. The discharging circuit of the modulator is being tested at ∼ 33 kV, 40-80A, at a maximum pulse repetition rate of 30 pps. The paper discusses development and testing of prototype discharging circuit on resistive load and magnetron. The technique used for measurement of pulse transformer leakage inductance, distributed capacitance and stray primary circuit series inductance will also be discussed in detail. It is necessary to have Energy Storage Capacitors with low ESL for these applications (ESL < 40 nH). The method used for evaluating the ESL of locally available metalized polypropylene capacitors will also be presented. (author)

Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Shao-Ze Tseng

2014-01-01

Full Text Available This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

2012-01-31

Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

Multilayer DLC coatings via alternating bias during magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Li Fengji [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Zhang, Sam, E-mail: msyzhang@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Kong Junhua [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Zhang Yujuan [Key Laboratory of Special Functional Material, Henan University (China); Zhang Wali [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

2011-05-31

To combat the high residual stress problem in monolayer diamond-like carbon coatings, this paper fabricated multilayer diamond-like carbon coatings with alternate soft and hard layers via alternating bias during magnetron sputtering. The surface, cross sectional morphology, bonding structures and mechanical properties are investigated. The atomic force microscopy images indicate low bias results in rougher surface with large graphite clusters and voids suggesting low coating density. The multilayered coatings demonstrate relatively smooth surface stemming from higher bias. The cross sectional images from field emission scanning electron microscopy indicate coating thickness decreases as substrate bias increases and confirm that higher bias results in denser coating. Delamination is observed in monolayer coatings due to high residual stress. The trend of sp{sup 3}/sp{sup 2} fraction estimated by X-ray photoelectron spectroscopy is consistent with that of I{sub D}/I{sub G} ratios from Raman spectra, indicating the change of bonding structure with change of substrate bias. Hardness of multilayer diamond-like carbon coating is comparable to the coatings deposited at low constant bias but the adhesion strength and toughness are significantly improved. Alternately biased sputtering deposition provides an alternative when combination of hardness, toughness and adhesion strength is needed in an all diamond-like carbon coating.

Functional nanostructured titanium nitride films obtained by sputtering magnetron

International Nuclear Information System (INIS)

Sanchez, O.; Hernandez-Velez, M.; Navas, D.; Auger, M.A.; Baldonedo, J.L.; Sanz, R.; Pirota, K.R.; Vazquez, M.

2006-01-01

Development of new methods in the formation of hollow structures, in particular, nanotubes and nanocages are currently generating a great interest as a consequence of the growing relevance of these nanostructures on many technological fields, ranging from optoelectronics to biotechnology. In this work, we report the formation of titanium nitride (TiN) nanotubes and nanohills via reactive sputtering magnetron processes. Anodic Alumina Membranes (AAM) were used as template substrates to grow the TiN nanostructures. The AAM were obtained through electrochemical anodization processes by using oxalic acid solutions as electrolytes. The nanotubes were produced at temperatures below 100 deg. C, and using a pure titanium (99.995%) sputtering target and nitrogen as reactive gas. The obtained TiN thin films showed surface morphologies adjusted to pore diameter and interpore distance of the substrates, as well as ordered arrays of nanotubes or nanohills depending on the sputtering and template conditions. High Resolution Scanning Electron Microscopy (HRSEM) was used to elucidate both the surface order and morphology of the different grown nanostructures. The crystalline structure of the samples was examined using X-ray Diffraction (XRD) patterns and their qualitative chemical composition by using X-ray Energy Dispersive Spectroscopy (XEDS) in a scanning electron microscopy

Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

International Nuclear Information System (INIS)

Siddheswaran, R.; Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan; Životský, Ondřej; Novák, Petr; Šutta, Pavol

2014-01-01

Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O 2 gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature

Room temperature H2S gas sensing property of indium oxide thin films obtained by pulsed D.C. magnetron sputtering

International Nuclear Information System (INIS)

Nisha, R.; Madhusoodanan, K.N.; Karthikeyan, Sreejith; Hill, Arthur E.; Pilkington, Richard D.

2013-01-01

Indium oxide thin films were prepared by pulsed dc magnetron sputtering technique with no substrate heating. X-ray diffraction was used to investigate the structural properties and AFM was used to study the surface morphology gas sensing performance were conducted using a static gas sensing system. Room temperature gas sensing performance was conducted in range of 17 to 286 ppm. The sensitivity, response and recovery time of the sensor was also determined. (author)

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

Science.gov (United States)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

Science.gov (United States)

Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

2018-03-01

In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

International Nuclear Information System (INIS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-01-01

Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.

2013-01-01

ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted

Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

International Nuclear Information System (INIS)

Anders, Andre

2008-01-01

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Azadeh Jafari

2014-07-01

Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

Deposition of a conductive near-infrared cutoff filter by radio-frequency magnetron sputtering

International Nuclear Information System (INIS)

Lee, Jang-Hoon; Lee, Seung-Hyu; Yoo, Kwang-Lim; Kim, Nam-Young; Hwangbo, Chang Kwon

2002-01-01

We have designed a conductive near-infrared (NIR) cutoff filter for display application, i.e., a modified low-emissivity filter based on the three periods of the basic design of [TiO2|Ti|Ag| TiO2] upon a glass substrate and investigated the optical, structural, chemical, and electrical properties of the conductive NIR cutoff filter prepared by a radio frequency magnetron sputtering system. The results show that the average transmittance is 61.1% in the visible, that the transmittance in the NIR is less than 6.6%, and that the sheet resistance and emissivity are 0.9 Ω/□ (where □ stands for a square film) and 0.012, respectively, suggesting that the conductive NIR cutoff filter can be employed as a shield against the hazard of electromagnetic waves as well as to cut off the NIR

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

Science.gov (United States)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

Development of Nb$_3$Sn coatings by magnetron sputtering for SRF cavities

CERN Document Server

Rosaz, G.; Leaux, F.; Motschmann, F.; Mydlarz, Z.; Taborelli, M.; Vollenberg, W.

2016-01-01

Cost and energy savings are an integral requirement in the design of future particle accelerators. Very low losses SRF accelerating systems, together with high-efficiency cryogenics systems, have the potential of low running costs. The association to the capital cost reduction allowed by thin films coated copper cavities may represent the best overall cost-performance compromise. This strategy has been applied for instance in LEP, the LHC and HIE-ISOLDE with the niobium thin films technology. New materials must be considered to improve the quality factor of the cavities, such as Nb$_{3}$Sn, which could also ideally operate at higher temperature thus allowing further energy savings. The study considers the possibility to coat a copper resonator with an Nb$_{3}$Sn layer by means of magnetron sputtering using an alloyed target. We present the impact of the process parameters on the as-deposited layer stoichiometry. The latter is in good agreement with previous results reported in the literature and can be tuned ...

Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

Energy Technology Data Exchange (ETDEWEB)

Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D. [School of Energy Studies, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, S. R., E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-13

Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

Electronic motion in the pre-oscillation phase of a smooth bore magnetron

International Nuclear Information System (INIS)

Garelis, E.; Hickman, R.B.

1979-01-01

The calculation of the electronic motion in the pre-oscillation phase of a smooth bore magnetron is the problem of calculating the electronic motion in the region between two concentric cylinders with an applied radial electric field and a constant axial B/sub z/ magnetic field. The inner cylinder represents the electron emitting cathode and the outer cylinder represents the anode. The emission is assumed to be space charge limited. This results in an electronic cloud surrounding the cathode. The radial velocity of the electrons is limited by the space charge and in addition the axial magnetic field tends to curve the path of the electrons so that they return to the cathode. Consequently, the electronic orbit extends to some distance r 0 from the cathode and for values of the radius r > r 0 exists a charge free region. The model assumes relativistic electronic motion with self-consistent magnetic fields. The magnetic flux is assumed to be conserved; i.e., conducting cylindrical walls

Non-channel magnetron gun as the electron source for resonance linear accelerator

International Nuclear Information System (INIS)

Ivanov, G.M.; Makhnenko, L.A.; Cherenshchikov, S.A.

1999-01-01

Studies on the magnetron gun with a cold cathode being part of linear accelerator on the travelling wave are described. Two modes of the gun operation differing by presence of UHF field of the pre-buncher near the gun are observed. In the mode without UHF field the short (about 2 ns) pulses of accelerated electrons with amplitude up to 0.5 A at the gun current up to 20 A were obtained. The presence of UHF field near the gun makes it possible to obtain the beam of higher duration (up to 1.0 μs), but with current up to 20 mA at the accelerator outlet and up to 1 A at the gun outlet. The mechanism of the gun operation is concerned with the secondary-electron current increase and setting self-sustaining secondary emission. Gun characteristics under study are acceptable for the purposes of injection into accelerator [ru

Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

International Nuclear Information System (INIS)

Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

2008-01-01

Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

Study on helium-charged titanium films deposited by DC-magnetron sputtering

International Nuclear Information System (INIS)

Shi Liqun; Jin Qinhua; Liu Chaozhuo; Xu Shilin; Zhou Zhuying

2005-01-01

Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%) incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage (or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retaining He in sputtering Ti films is much higher than that in the coarse-grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X-ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase. (authors)

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

Science.gov (United States)

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

OpenAIRE

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, Dmitry Vladimirovich; Yuriev, Yuri Nikolaevich

2016-01-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Non-isothermal kinetics of phase transformations in magnetron sputtered alumina films with metastable structure

International Nuclear Information System (INIS)

Zuzjaková, Š.; Zeman, P.; Kos, Š.

2013-01-01

Highlights: • Non-isothermal kinetics of phase transformations in alumina films was investigated. • The structure of alumina films affects kinetics of the transformation processes. • Kinetic triplets of all transformation processes were determined. • The KAS, FWO, FR and IKP methods for determination of E a and A were used. • The Málek method for determination of the kinetic model was used. - Abstract: The paper reports on non-isothermal kinetics of transformation processes in magnetron sputtered alumina thin films with an amorphous and γ-phase structure leading ultimately to the formation of the thermodynamically stable α-Al 2 O 3 phase. Phase transformation sequences in the alumina films were investigated using differential scanning calorimetry (DSC) at four different heating rates (10, 20, 30, 40 °C/min). Three isoconversional methods (Kissinger–Akahira–Sunose (KAS), Flynn–Wall–Ozawa (FWO) and Friedman (FR) method) as well as the invariant kinetic parameters (IKP) method were used to determine the activation energies for transformation processes. Moreover, the pre-exponential factors were determined using the IKP method. The kinetic models of the transformation processes were determined using the Málek method. It was found that the as-deposited structure of alumina films affects kinetics of the transformation processes. The film with the amorphous as-deposited structure heated at 40 °C/min transforms to the crystalline γ phase at a temperature of ∼930 °C (E a,IKP = 463 ± 10 kJ/mol) and subsequently to the crystalline α phase at a temperature of ∼1200 °C (E a,IKP = 589 ± 10 kJ/mol). The film with the crystalline γ-phase structure heated at 40 °C/min is thermally stable up to ∼1100 °C and transforms to the crystalline α phase (E a,IKP = 511 ± 16 kJ/mol) at a temperature of ∼1195 °C. The empirical two-parameter Šesták–Berggren kinetic model was found to be the most adequate one to describe all transformation processes

REGULATION OF INSTANTANEOUS POWER OUTPUT VALUE IN MAGNETRON WITH CONTINUOUS GENERATION MODE (M-105-, M-112-TYPES BEING PART OF PLASMA TECHNOLOGICAL UNIT

Directory of Open Access Journals (Sweden)

S. V. Bordusov

2010-01-01

Full Text Available The paper presents results of investigations pertaining to the possibility of regulating instantaneous power output  in a magnetron of M-105 (M-112-type by changing the capacity value of a capacitor in structure diagram for doubling voltage of high-voltage power supply on the basis of a step-up transformer operating in the saturation regime.

RF magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

Directory of Open Access Journals (Sweden)

K.A. Prosolov

2017-09-01

Full Text Available Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate, sintered at different mass % ratios. According to Raman scattering and X-ray diffraction data, the deposited hydroxyapatite coatings have a disordered structure. High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one. A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes. It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.

Tribological properties of nc-TiC/a-C:H coatings prepared by magnetron sputtering at low and high ion bombardment of the growing film

Czech Academy of Sciences Publication Activity Database

Souček, P.; Schmidtová, T.; Bursíková, V.; Vašina, P.; Pei, Y.; De Hos, J. Th. M.; Caha, O.; Peřina, Vratislav; Mikšová, Romana; Malinský, Petr

2014-01-01

Roč. 241, FEB (2014), s. 64-73 ISSN 0257-8972 R&D Projects: GA MŠk(XE) LM2011019; GA ČR(CZ) GD104/09/H080 Institutional support: RVO:61389005 Keywords : nanocomposites * magnetron sputtering * Titanium carbide * ion flux * friction * wear Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.998, year: 2014

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Directory of Open Access Journals (Sweden)

Kavitha A.

2017-02-01

Full Text Available The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode and without (diode mode supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2 plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W. The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W.

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

Science.gov (United States)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

Energy Technology Data Exchange (ETDEWEB)

Krylov, P. N., E-mail: ftt@uni.udm.ru; Zakirova, R. M.; Fedotova, I. V. [Udmurt State University (Russian Federation)

2013-10-15

A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

2014-11-03

Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

Energy Technology Data Exchange (ETDEWEB)

Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

2016-07-05

Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

2017-05-31

Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Jahodova, Vera; Ding, Xing-zhao; Seng, Debbie H.L.; Gulbinski, W.; Louda, P.

2013-01-01

Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power

Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

International Nuclear Information System (INIS)

Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

2015-01-01

Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Science.gov (United States)

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

2016-06-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

High power pulsed magnetron sputtering of transparent conducting oxides

International Nuclear Information System (INIS)

Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

2008-01-01

High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

On the control of deposition process for enhanced mechanical properties of nc-TiC/a-C: H coatings with DC magnetron sputtering at low or high ion flux

Czech Academy of Sciences Publication Activity Database

Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana; Pei, Y.; de Hosson, J. T. M.

Roč. 255, 25 September (2014), s. 8-14 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : enhanced mechanical properties * ion flux on the substrate * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

2016-09-01

Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Reversible superhydrophilicity and hydrophobicity switching of V2O5 thin films deposited by magnetron sputtering

Science.gov (United States)

Zhang, Chunzi; Peng, Zhiguang; Cui, Xiaoyu; Neil, Eric; Li, Yuanshi; Kasap, Safa; Yang, Qiaoqin

2018-03-01

V2O5 thin films are well-known "smart" materials due to their reversible wettability under UV irradiation and dark storage. Their surfaces are usually hydrophobic and turn into hydrophilic under UV irradiation. However, the V2O5 thin films deposited by magnetron sputtering in present work are superhydrophilic and turned into hydrophobic after days' of storage in air. This change can be recovered by heating. The effects of many factors including surface roughness, irradiation from visible light, UV, & X-ray, and storage in air & vacuum on the reversible switching of wettability were investigated. The results show that air absorption is the main factor causing the film surface change from superhydrophilicity to hydrophobicity.

Investigation of CaTiO3:Pr3+ thin films deposited by radiofrequency reactive magnetron sputtering for electroluminescence application

International Nuclear Information System (INIS)

Sarakha, L; Bousquet, A; Tomasella, E; Boutinaud, P; Mahiou, R

2010-01-01

In this report we successfully deposited thin films of CaTiO 3 :Pr 3+ by radiofrequency magnetron sputtering. The films were studied and we tried to understand the evolution of their optical and electrical properties. We noticed that the annealing temperature and the deposition pressures have an important influence on these properties. Thin films with good optical and electrical properties have been obtained. These films are transparent and are characterized by an intense red photoluminescence and a low fixed charge density. They are well dedicated for electroluminescence purposes.

Numerical Simulation of Single-anode and Double-anode Magnetron Injection Guns for 127.5 GHz 1 MW Gyrotron

Science.gov (United States)

Singh, Udaybir; Kumar, Nitin; Kumar, Anil; Purohit, Laxmi Prasad; Sinha, Ashok Kumar

2011-07-01

This paper presents the design of two types of magnetron injection guns (MIG's) for 1 MW, 127.5 GHz gyrotron. TE24,8 mode has been chosen as the operating mode. In-house developed code MIGSYN has been used to estimate the initial gun parameters. The electron trajectory tracing program EGUN and in-house developed code MIGANS have been used to optimize the single-anode and the double-anode design for 80 kV, 40 A MIG. The parametric analysis of MIG has also been presented. The advantages and the disadvantages of each kind of configuration have been critically examined.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

International Nuclear Information System (INIS)

Kunj, Saurabh; Sreenivas, K.

2016-01-01

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O_2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Science.gov (United States)

Kunj, Saurabh; Sreenivas, K.

2016-05-01

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Kunj, Saurabh, E-mail: saurabhkunj22@gmail.com; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)

2016-05-23

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

2016-05-06

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

Mass spectrometric characterizations of ions generated in RF magnetron discharges during sputtering of silver in Ne, Ar, Kr and Xe gases

Czech Academy of Sciences Publication Activity Database

Pokorný, D.; Novotný, Michal; Musil, Jindřich; Fitl, Přemysl; Bulíř, Jiří; Lančok, Ján

2013-01-01

Roč. 10, č. 7 (2013), s. 593-602 ISSN 1612-8850 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR(CZ) GAP108/11/1312; GA ČR(CZ) GAP108/11/0958 Grant - others:AVČR(CZ) M100101271 Institutional support: RVO:68378271 Keywords : double charge ions * mass spectrometry * noble gas * RF magnetron discharges * silver * single charge ions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.964, year: 2013

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

International Nuclear Information System (INIS)

Tao, Lei; Li, Heqin; Shen, Jiong; Qiao, Kai; Wang, Wei; Zhou, Chu; Zhang, Jing; Tang, Qiong

2015-01-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H 2 SO 4 solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

Energy Technology Data Exchange (ETDEWEB)

Tao, Lei [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Shen, Jiong [Earth-Panda Advance Magnetic Material Co., Ltd., Anhui Lujiang 231500 (China); Qiao, Kai; Wang, Wei; Zhou, Chu [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Anhui Hefei 230009 (China)

2015-02-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H{sub 2}SO{sub 4} solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film.

Composite SiO.sub.x./sub./hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO.sub.2./sub. and polyethylene or polypropylene

Czech Academy of Sciences Publication Activity Database

Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

2006-01-01

Roč. 81, 1-4 (2006), s. 32-37 ISSN 0042-207X R&D Projects: GA MŠk 1P05ME754 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

International Nuclear Information System (INIS)

Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

2007-01-01

Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper

Rhodium-coated mirrors deposited by magnetron sputtering for fusion applications

International Nuclear Information System (INIS)

Marot, L.; Temmermann, G. de; Oelhafen, P.; Mathys, D.; Covarel, G.; Litnovsky, A.

2007-01-01

Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for plasma diagnostics that will be used in ITER. Any change in the mirror performance, in particular its reflectivity, will influence the quality and reliability of detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium may be a good candidate material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different relevant substrates (Mo, Stainless Steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness, crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch test results demonstrate that adhesion properties increase with the substrate hardness. The detailed optical characterizations of Rh coated mirrors as well as the results of erosion tests performed both under laboratory conditions and in TEXTOR will be presented in this paper. (orig.)

Comparative study of total power density at a substrate in pulsed DC magnetron and hollow-cathode plasma jet sputtering systems

Czech Academy of Sciences Publication Activity Database

Čada, Martin; Virostko, Petr; Kment, Štěpán; Hubička, Zdeněk

2009-01-01

Roč. 6, S1 (2009), S247-S252 ISSN 1612-8850. [International Conference on Plasma Surface Engineering /11./. Garmisch Partenkirchen, 15.09.2008-19.09.2008] R&D Projects: GA AV ČR KAN301370701; GA AV ČR KJB100100707; GA AV ČR KJB100100805; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : calorimeter probe * floating substrate * magnetron * plasma jet * pulsed discharge Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.037, year: 2009

Bioactivity response of Ta_1_-_xO_x coatings deposited by reactive DC magnetron sputtering

International Nuclear Information System (INIS)

Almeida Alves, C.F.; Cavaleiro, A.; Carvalho, S.

2016-01-01

The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O_2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta_1_-_xO_x coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta oxide surface

Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

International Nuclear Information System (INIS)

Brenning, N; Huo, C; Raadu, M A; Lundin, D; Helmersson, U; Vitelaru, C; Stancu, G D; Minea, T

2012-01-01

The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a ‘sweet spot’ in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Π Townsend is proposed. A parametric analysis of Π Townsend shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength. (paper)

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

Science.gov (United States)

Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

2014-12-24

Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin

2018-04-09

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

Science.gov (United States)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Qi, Zhengbing; Shen, Hao; Wang, Zhoucheng

2018-01-01

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

Influence of the microstructure on the corrosion behavior of magnetron sputter-quenched amorphous metallic alloys

Science.gov (United States)

Thakoor, A. P.; Khanna, S. K.; Williams, R. M.; Landel, R. F.

1983-01-01

The microstructure and corrosion behavior of magnetron sputter deposited amorphous metallic films of (Mo6ORu40)82B18 under varying sputtering atmospheres have been investigated. The microstructural details and topology of the films have been studied by scanning electron microscopy and correlated with the deposition conditions. By reducing the pressure of pure argon gas, the characteristic features of rough surface and columnar growth full of vertical voids can be converted into a mirror-smooth finish with very dense deposits. Films deposited in the presence of O2 or N2 exhibit columnar structure with vertical voids. Film deposited in pure argon at low pressure show remarkably high corrosion resistance due to the formation of a uniform passive surface layer. The influence of the microstructure and surface texture on the corrosion behavior is discussed.

Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

KAUST Repository

Baseer Haider, M.

2015-01-01

Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

CERN Document Server

Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

1999-01-01

Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

2008-01-15

Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

Deposition and characterization of NbAIN thin films by reactive magnetron sputtering

International Nuclear Information System (INIS)

Carvalho, R.G.; Felix, L.C.; Fernandez, D.A.R.; Fontes Junior, A.S.; Oliveira, G.B.; Tentardini, E.K.

2016-01-01

The objective of this work was to study NbAlN thin films and the influence of variation in the concentration of aluminum in the crystal structure and oxidation resistance of these coatings. The thin films were deposited by reactive magnetron sputtering and characterized by Grazing Incidence X-ray Diffraction (GIXRD), Energy Dispersive Spectroscopy (EDS) and oxidation tests at high temperatures. NbAlN thin films were deposited and present at concentration of 10, 20 and 42 at% Al. The NbAlN crystalline phase obtained was the δ-NbN, however it was observed a shift of the peaks in the patterns obtained GIXRD of regions for larger angles for these samples, indicating the formation of a solid solution. The higher oxidation resistance temperature was 700° C for the sample with 42 in at% Al. From the SEM analysis it was possible to observe the surface of the film after oxidation, all films showed defects, however the amount of such defects was lower in samples with higher aluminum concentrations. (author)

Study on the effect of hydrogen addition on the variation of plasma parameters of argon-oxygen magnetron glow discharge for synthesis of TiO2 films

Directory of Open Access Journals (Sweden)

Partha Saikia

2016-04-01

Full Text Available We report the effect of hydrogen addition on plasma parameters of argon-oxygen magnetron glow discharge plasma in the synthesis of H-doped TiO2 films. The parameters of the hydrogen-added Ar/O2 plasma influence the properties and the structural phases of the deposited TiO2 film. Therefore, the variation of plasma parameters such as electron temperature (Te, electron density (ne, ion density (ni, degree of ionization of Ar and degree of dissociation of H2 as a function of hydrogen content in the discharge is studied. Langmuir probe and Optical emission spectroscopy are used to characterize the plasma. On the basis of the different reactions in the gas phase of the magnetron discharge, the variation of plasma parameters and sputtering rate are explained. It is observed that the electron and heavy ion density decline with gradual addition of hydrogen in the discharge. Hydrogen addition significantly changes the degree of ionization of Ar which influences the structural phases of the TiO2 film.

Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications

Science.gov (United States)

Park, Seon-Yeong; Choe, Han-Cheol

2018-02-01

In this study, Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetrons sputtering for dental applications were studied using different experimental techniques. Mn coating films were formed on Ti-29Nb-xHf alloys by a radio frequency magnetron sputtering technique for 0, 1, 3, and 5 min at 45 W. The microstructure, composition, and phase structure of the coated alloys were examined by optical microscopy, field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The microstructure of Ti-29Nb alloy showed α" phase in the needle-like structure and Ti-29Nb-15Hf alloy showed β phase in the equiaxed structure. As the sputtering time increased, the circular particles of Mn coatings on the Ti-29Nb alloy increased at inside and outside surfaces. As the sputtering time increased, [Mn + Ca/P] ratio of the plasma electrolytic oxidized films in Ti- 29Nb-xHf alloys increased. The corrosion potential (Ecorr) of Mn coatings on the Ti-29Nb alloy showed higher than that of Mn coatings on the Ti-29Nb-15Hf alloy. The passive current density (Ipass) of the Mn coating on the Ti-29Nb alloy and Mn coatings on the Ti-29Nb-15Hf alloy was less noble than the non-Mn coated Ti-29Nb and Ti-29Nb-15Hf alloys surface.

Overcoming challenges to the formation of high-quality polycrystalline TiO{sub 2}:Ta transparent conducting films by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Neubert, M.; Cornelius, S.; Fiedler, J. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Gebel, T.; Liepack, H. [DTF Technology GmbH, 01108 Dresden (Germany); Kolitsch, A. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); HZDR Innovation GmbH, 01328 Dresden (Germany); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme, 01277 Dresden (Germany)

2013-08-28

The work is focused on understanding the physical processes responsible for the modification of the structure, electrical and optical properties of polycrystalline TiO{sub 2}:Ta films formed by annealing of initially amorphous films grown by direct current magnetron sputtering of electrically conductive ceramic targets. It is shown that fine tuning of the oxygen content during deposition of amorphous TiO{sub 2}:Ta films is critical to achieving low resistivity and high optical transmittance after annealing. Increasing the total pressure during magnetron sputter deposition is shown to decrease the sensitivity of the annealed films to the oxygen flow variation during deposition of the initially amorphous layers. Polycrystalline anatase TiO{sub 2}:Ta films of low electrical resistivity (ρ{sub H} = 1.5 × 10{sup −3}Ω cm), high free electron mobility (μ{sub H} = 8 cm{sup 2}/Vs), and low extinction (k{sub 550nm} = 0.006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation/deactivation taking into account the formation of compensating defects at different oxygen pressures. The temperature-dependent transport of the polycrystalline anatase TiO{sub 2}:Ta films is investigated showing the dominant role of the optical phonon scattering in the case of films with an optimum Ti/O ratio.

Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

Science.gov (United States)

Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

2016-03-01

Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

Temporal evolution of electron energy distribution function and plasma parameters in the afterglow of drifting magnetron plasma

International Nuclear Information System (INIS)

Seo, Sang-Hun; In, Jung-Hwan; Chang, Hong-Young

2005-01-01

The temporal behaviour of the electron energy distribution function (EEDF) and the plasma parameters such as electron density, electron temperature and plasma and floating potentials in a mid-frequency pulsed dc magnetron plasma are investigated using time-resolved probe measurements. A negative-voltage dc pulse with an average power of 160 W during the pulse-on period, a repetition frequency of 20 kHz and a duty cycle of 50% is applied to the cathode of a planar unbalanced magnetron discharge with a grounded substrate. The measured electron energy distribution is found to exhibit a bi-Maxwellian distribution, which can be resolved with the low-energy electron group and the high-energy tail part during the pulse-on period, and a Maxwellian distribution only with low-energy electrons as a consequence of initially rapid decay of the high-energy tail part during the pulse-off period. This characteristic evolution of the EEDF is reflected in the decay characteristics of the electron density and temperature in the afterglow. These parameters exhibit twofold decay represented by two characteristic decay times of an initial fast decay time τ 1 , and a subsequent slower decay time τ 2 in the afterglow when approximated with a bi-exponential function. While the initial fast decay times are of the order of 1 μs (τ T1 ∼ 0.99 μs and τ N1 ∼ 1.5 μs), the slower decay times are of the order of a few tens of microseconds (τ T2 ∼ 7 μs and τ N2 ∼ 40 μs). The temporal evolution of the plasma parameters are qualitatively explained by considering the formation mechanism of the bi-Maxwellian electron distribution function and the electron transports of these electron groups in bulk plasma

Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

Energy Technology Data Exchange (ETDEWEB)

Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

2017-02-15

Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

2011-01-01

Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

Science.gov (United States)

Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

2016-12-01

Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

Science.gov (United States)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

De La Roche, J. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); González, J.M. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Restrepo-Parra, E., E-mail: erestrepop@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Alleh, V.; Scharf, T.W. [The University of North Texas, Department of Materials Science and Engineering, Denton, TX 76203 (United States)

2014-11-30

Highlights: • Ti-doped WS{sub 2} films were grown via the magnetron co-sputtering technique. • At a high Ti percentage, the crystalline structure of WS{sub 2} coatings tends to be amorphous. • As the Ti percentage increases in WS{sub 2} coatings, nanocomposites tend to form. • Ti-doped WS{sub 2} films have elastic behavior compared with the plastic response of pure WS{sub 2} films. • A high Ti percentage increases the corrosion resistance of WS{sub 2} films. - Abstract: Titanium-doped tungsten bisulfide thin films (WS{sub 2}-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS{sub 2} was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS{sub 2}. Using the scratch test, the coatings’ adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

Energy Technology Data Exchange (ETDEWEB)

Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

2016-11-01

Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered Amorphous TiO2 Films

OpenAIRE

Chandra Sekhar, M.; Kondaiah, P.; Radha Krishna, B.; Uthanna, S.

2013-01-01

Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range 9 × 10−3–9 × 10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of 6×10−2 Pa was nearly stoichiometric. TiO2 films formed at...

Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

International Nuclear Information System (INIS)

Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

2016-01-01

N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

Growth of high-quality CuInSe sub 2 polycrystalline films by magnetron sputtering and vacuum selenization

CERN Document Server

Xie Da Tao; Wang Li; Zhu Feng; Quan Sheng Wen; Meng Tie Jun; Zhang Bao Cheng; Chen J

2002-01-01

High-quality CuInSe sub 2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu sub 1 sub 1 In sub 9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe sub 2 films were uniform and densely packed with a grain size of about 3.0 mu m

Structural study and fabrication of nano-pattern on ultra thin film of Ag grown by magnetron sputtering

International Nuclear Information System (INIS)

Banerjee, S.; Mukherjee, S.; Kundu, S.

2001-01-01

We present the structural study of ultra thin Ag films using grazing incidence x-ray reflectivity and the modification of these films with the tip of an atomic force microscope. Ag thin films are deposited using dc magnetron sputtering on a Si(001) substrate. Initially, the growth of the film is carpet like and above a certain thickness (∼42 A) the film structure changes to form mounds. This ultra thin film of Ag having carpet-like growth can be modified by the tip of an atomic force microscope, which occurs due to the porous nature of the film. A periodic pattern of nanometer dimensions has been fabricated on this film using the atomic force microscope tip. (author)

Observation of a periodic runaway in the reactive Ar/O2 high power impulse magnetron sputtering discharge

Directory of Open Access Journals (Sweden)

Seyedmohammad Shayestehaminzadeh

2015-11-01

Full Text Available This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O2 discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

Effect of interfacial oxide thickness on the photocatalytic activity of magnetron-sputtered TiO2coatings on aluminum substrate

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Petit, Jean-Pierre; Shabadi, Rajashekhara

2015-01-01

The influence of the coating/substrate interface on the photocatalytic behavior of Al-TiO2 coatings was investigated. The TiO2 coatings were prepared by magnetron sputtering. The nanoscale structure of the coating was analyzed using X-ray diffraction; atomic force microscopy; scanning electron...... transport between the coating and the metallic substrate. The highest photocurrents were indeed obtained when the thickness of interfacial aluminum oxide could be reduced by sputtering a thin Ti layer prior to TiO2 coating. Photocurrent plotted for different photon energy for a TiO2 coating on a Ti...

Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

2017-05-01

Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

Energy Technology Data Exchange (ETDEWEB)

Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126.com; Hu, Guangcai; Hu, Xie; Chen, Xipeng; Li, Pengzhi; Xiang, Weidong, E-mail: xiangweidong001@126.com

2017-04-15

The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Science.gov (United States)

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

Science.gov (United States)

Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

2018-05-01

Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

International Nuclear Information System (INIS)

Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

2006-01-01

Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

2011-01-01

The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

CERN Document Server

Seino, T

2002-01-01

The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

Preparation and characterization of photocatalytic performance of hierarchical heterogeneous nanostructured ZnO/TiO2 films made by DC magnetron sputtering

International Nuclear Information System (INIS)

Le Phuc Quy; Vu Thi Hanh Thu

2013-01-01

With the aim to enhance photocatalytic properties and anti-Ecoli bacteria abilities of TiO 2 thin films; hierarchical heterogeneous nanostructured ZnO/TiO 2 (HN s ) films were deposited by DC magnetron sputtering. The obtained results showed that both the photocatalytic performance and anti-Ecoli bacteria ability of HN s films exhibited enhancement in comparison with standard TiO 2 films. This enhancement was explained due to the reduction of the electron - hole recombination and the red shift of absorption edge of the HNs films. (author)

Biocompatibility of GaSb thin films grown by RF magnetron sputtering

Science.gov (United States)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2017-07-01

GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

Particle-balance models for pulsed sputtering magnetrons

Science.gov (United States)

Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

2017-09-01

The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

International Nuclear Information System (INIS)

Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

2016-01-01

The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Huang, Yiqin [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zuo, Min; Tao, Lei; Wang, Wei [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China); Bai, Peiwen [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China)

2016-07-01

The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lardjane, Soumia, E-mail: lardjanesoumia@yahoo.fr [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Pour Yazdi, Mohammad Arab [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Martin, Nicolas [FEMTO-ST, Département MN2S, UMR 6174 CNRS, Université de Franche-Comté, ENSMM, UTBM, 32, Avenue de l’Observatoire, 25044 Besancon Cedex (France); Bellouard, Christine [Laboratoire de Physique des Matériaux, Nancy University, CNRS, 54506 Vandoeuvre-lès-Nancy Cedex (France); Fenineche, Nour-eddine [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France); Schuler, Andreas [Solar Energy and Buildings Physics Laboratory, EPFL ENAC IIC LESO-PB, Station 18, Bâtiment LE, 1015 Lausanne (Switzerland); Merad, Ghouti [Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables, Université Abou Bekr Belkaid, Tlemcen (Algeria); Billard, Alain [IRTES-LERMPS, UTBM, Site de Montbéliard, 90010 Belfort Cedex (France)

2015-07-01

Zn{sub 1−x}Co{sub x}O (0 < x < 0.146) conductive thin films have been deposited by reactive magnetron sputtering of metallic Zn and Co targets at high pressure and temperature. The structural properties have been investigated by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It has been observed that all as-deposited films are crystallized in pure hcp ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected. The average grain size estimated from full width at half maximum of XRD results varied between 65 and 83 nm. XPS analyses exhibit that Co ions are successfully entered into ZnO lattice as Co{sup +2}. The electrical properties including conductivity, carrier density and carrier mobility were determined by Hall effect measurements in a temperature range from 300 K to 475 K. The conductivity of the films decreases from σ{sub 300K} = 2.2 × 10{sup 4} to 2.3 × 10{sup −1} Sm{sup −1} as the Co content changes from 0 to 0.146. Magnetic measurements reveal the absence of ferromagnetism even at 3 K and a paramagnetic Curie–Weiss behavior associated to magnetic clusters. - Highlights: • Zn{sub 1−x}Co{sub x}O conductive thin films were synthesized by reactive magnetron sputtering. • Structural characterization exhibited the absence of Co clusters or secondary phases. • The film conductivity decreased with increasing of Co concentration. • No ferromagnetism was observed in all Co doped ZnO samples. • Magnetic properties are described by a Curie–Weiss behavior associated to clusters.

Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

International Nuclear Information System (INIS)

Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

2015-01-01

HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

Silver nanoparticles deposited on anodic aluminum oxide template using magnetron sputtering for surface-enhanced Raman scattering substrate

Energy Technology Data Exchange (ETDEWEB)

Wong-ek, Krongkamol [Nanoscience and Technology Program, Chulalongkorn University, Bangkok 10330 (Thailand); Eiamchai, Pitak; Horprathum, Mati; Patthanasettakul, Viyapol [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Limnonthakul, Puenisara [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Chindaudom, Pongpan [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Nuntawong, Noppadon, E-mail: noppadon.nuntawong@nectec.or.t [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand)

2010-09-30

Low-cost and highly sensitive surface-enhanced Raman scattering (SERS) substrates have been fabricated by a simple anodizing process and a magnetron sputtering deposition. The substrates, which consist of silver nanoparticles embedded on anodic aluminum oxide (AAO) templates, are investigated by a scanning electron microscope and a confocal Raman spectroscopy. The SERS activities are demonstrated by Raman scattering from adsorbed solutions of methylene blue and pyridine on the SERS substrate surface. The most optimized SERS substrate contains the silver nanoparticles, with a size distribution of 10-30 nm, deposited on the AAO template. From a calculation, the SERS enhancement factor is as high as 8.5 x 10{sup 7}, which suggests strong potentials for direct applications in the chemical detection and analyses.

Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

Directory of Open Access Journals (Sweden)

E. Prociow

2011-04-01

Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

Investigation of the negative ions in Ar/O.sub.2./sub. plasma of magnetron sputtering discharge with Al:Zn target by ion mass spectrometry

Czech Academy of Sciences Publication Activity Database

Pokorný, Petr; Mišina, Martin; Bulíř, Jiří; Lančok, Ján; Fitl, Přemysl; Musil, Jindřich; Novotný, Michal

2011-01-01

Roč. 8, č. 5 (2011), s. 459-464 ISSN 1612-8850 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : energy-resolved ion mass spectrometry * formation of negative ions * magnetron sputtering * mass spectrometry * transparent conductive oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.468, year: 2011

AES depth profiles in Mo-coated 304L stainless steel achieved by RF-magnetron sputtering and influence of Mo on the corrosion in 3.5% NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Saidi, D. [Département de métallurgie, Division de Technologie du Combustible, Centre de Recherche Nucléaire de Draria CRND, BP. 43 Draria, Alger (Algeria); Zaid, B., E-mail: zaidbachir@yahoo.com [Département de métallurgie, Division de Technologie du Combustible, Centre de Recherche Nucléaire de Draria CRND, BP. 43 Draria, Alger (Algeria); Souami, N. [Centre de Recherche Nucléaire d’Alger CRNA, 2 Bd. Frantz Fanon, Alger (Algeria); Saoula, N. [Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées CDTA, Cité du 20 août 1956, Baba Hassan, BP n 17, Alger (Algeria); Siad, M. [Centre de Recherche Nucléaire d’Alger CRNA, 2 Bd. Frantz Fanon, Alger (Algeria); Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Biberian, J.P. [CINaM, UMR 7525 CNRS, Aix Marseille Université, 13288 Marseille Cedex 9 (France)

2015-10-05

Highlights: • Mo coating of 304L stainless steel is achieved via RF-magnetron sputtering. • The AES depth profiles before and after annealing in air (at 973 K) are analyzed. • The corrosions in NaCl solution of bare and Mo-coated samples are compared. • Mo-coated steels exhibit better corrosion behaviors. • The positive action of Mo oxide via its semi-conducting properties is deduced. - Abstract: Molybdenum-coated 304L stainless steel samples, fabricated by RF-magnetron sputtering, are characterized by Auger Electron Spectroscopy (AES) before and after annealing in air at 973 K. The electrochemical parameters of bare and coated materials, in NaCl 3.5% water solution at 298 K, are derived from the potentiodynamic polarization curves. The corrosion current of Mo-coated samples (before and after annealing) is significantly lower than that of its bare counterpart. The information gained from the AES depth profiles leads us to infer that the positive action of molybdenum on the corrosion behavior may be attributed to the changes induced by the semi-conducting properties of Mo oxide in the passive film.

Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

Energy Technology Data Exchange (ETDEWEB)

Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

2011-07-29

The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

Science.gov (United States)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Aryanto, Didik, E-mail: didi027@lipi.go.id [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Marwoto, Putut; Sugianto [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Sudiro, Toto [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Birowosuto, Muhammad D. [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, 637553 (Singapore); Sulhadi [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)

2016-04-19

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

KAUST Repository

Wei, Binbin

2016-12-29

Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Science.gov (United States)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Application of high rate magnetron sputtering to the fabrication of A-15 compounds

International Nuclear Information System (INIS)

Kampwirth, R.T.; Hafstrom, J.W.; Wu, C.T.

1976-01-01

High quality Nb 3 Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 μm/min. at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3 0 K, J/sub c/(O)'s of 15 x 10 6 A/cm 2 and Hc 2 as high as 240 kOe have been achieved in 1-3 μm films deposited from a Nb 3 Sn reacted powder target with substrate temperatures between 600 and 800 0 C. The films exhibit smooth surfaces and, generally, a [200] preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Directory of Open Access Journals (Sweden)

T. Ojima

2018-04-01

Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

Science.gov (United States)

Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

2016-08-01

The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

Corrosion resistance of CrN thin films produced by dc magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

2013-04-01

In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

Time resolved 2-D optical imaging of a pulsed unbalanced magnetron plasma

International Nuclear Information System (INIS)

Bradley, J W; Clarke, G C B; Braithwaite, N St J; Bryant, P M; Kelly, P J

2006-01-01

Using wavelength filtered two dimensional (2-D) optical imaging, the temporal and spatial evolution of selected excited species in a pulsed magnetron discharge has been studied. A titanium target was sputtered at a pulse frequency of 100 kHz, in an argon atmosphere, at an operating pressure of 0.27 Pa. The radial information of the emissivity was determined using the Abel inversion technique. The results show strong excitation of the observed species above the racetrack in the on-time, and the possible development of an ion-acoustic wave, initiated after the off-on transition. The on-off transition is accompanied by a burst of light from the plasma bulk consistent with the transient plasma potential reaching about +200 V. During this phase, we argue that there is a release of secondary electrons from the grounded substrate and walls due to ion bombardment, as well as an increased confinement of energetic plasma electrons. The characteristic decay times of the selected transitions at 750.4, 751.5, 810.4 and 811.5 nm (ArI), present within the bandpass width of our filters, is briefly discussed in terms of the production of fast electrons in the system

Characterization of AZO and Ag based films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)

Miao, Dagang; Jiang, Shouxiang; Zhao, Hongmei; Shang, Songmin; Chen, Zhuoming

2014-01-01

Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films

Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

International Nuclear Information System (INIS)

Hezam, M.; Tabet, N.; Mekki, A.

2010-01-01

ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

Effect of N_2 flow rate on the microstructure and electrochemical behavior of TaN_x films deposited by modulated pulsed power magnetron sputtering

International Nuclear Information System (INIS)

Mendizabal, L.; Bayón, R.; G-Berasategui, E.; Barriga, J.; Gonzalez, J.J.

2016-01-01

Modulated pulsed power magnetron sputtering (MPPMS) technology offers the possibility to grow high performance coatings compared to the ones developed by conventional dc magnetron sputtering. The high degree of ionization of sputtered particles developed during MPPMS can be usefully utilized to precisely tailor the properties of the growing films. One of the main advantages of such a high metal ion flux is related to the densification of the coatings due to enhance ion bombardment towards the growing film. The development of extremely dense and low-defect microstructure coatings can have a positive effect on the corrosion resistance of tantalum nitride (TaN_x) films. In this study, TaN_x thin films have been deposited by MPPMS in a closed field unbalanced magnetron sputtering system. Structure, surface morphology, hardness and corrosion resistance of the developed coatings have been analyzed as a function of different N_2-to-Ar ratios (0, 0.25, 0.625, 1). X-ray diffraction and scanning electron microscopy analysis reveal high dependence of the grown crystal phases and the microstructure on N_2-to-Ar ratio. The hardness of the TaN_x coatings increases when increasing N_2-to-Ar ratio up to a maximum value of 25 GPa (N_2-to-Ar ratio of 0.625). The corrosion behavior was investigated using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry. EIS measurements registered at different immersion times show high impedance values (in the order of 10 MΩ cm"2) and corrosion resistance enhancement with time, indicating the formation of a passive protective oxide layer on the top of their surfaces. TaN_x film grown at 0.25 N_2-to-Ar ratio exhibits the highest corrosion resistance of 103.53 MΩ cm"2 and low porosity of 1.63 × 10"−"3 and is characterized by columnar-free microstructure. - Highlights: • TaN_X coatings deposited by MPPMS at different N_2-to-Ar ratios have been evaluated. • Columnar-free microstructure TaN_x films are obtained at 0

Niobium-based catalysts prepared by reactive radio-frequency magnetron sputtering and arc plasma methods as non-noble metal cathode catalysts for polymer electrolyte fuel cells

International Nuclear Information System (INIS)

Ohnishi, Ryohji; Katayama, Masao; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

2010-01-01

Two vacuum methods, reactive radio-frequency (RF) magnetron sputtering and arc plasma deposition, were used to prepare niobium-based catalysts for an oxygen reduction reaction (ORR) as non-noble metal cathodes for polymer electrode fuel cells (PEFCs). Thin films with various N and O contents, denoted as NbO x and Nb-O-N, were prepared on glassy carbon plates by RF magnetron sputtering with controlled partial pressures of oxygen and nitrogen. Electrochemical measurements indicated that the introduction of the nitrogen species into the thin film resulted in improved ORR activity compared to the oxide-only film. Using an arc plasma method, niobium was deposited on highly oriented pyrolytic graphite (HOPG) substrates, and the sub-nanoscale surface morphology of the deposited particles was investigated using scanning tunneling microscopy (STM). To prepare practical cathode catalysts, niobium was deposited on carbon black (CB) powders by arc plasma method. STM and transmission electron microscopy observations of samples on HOPG and CB indicated that the prepared catalysts were highly dispersed at the atomic level. The onset potential of oxygen reduction on Nb-O-N/CB was 0.86 V vs. a reversible hydrogen electrode, and the apparent current density was drastically improved by the introduction of nitrogen.

Effect of nitrogen doping on TiO.sub.x./sub.N.sub.y./sub. thin film formation at reactive high-power pulsed magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Straňák, Vítězslav; Quaas, M.; Bogdanowicz, R.; Steffen, H.; Wulff, H.; Hubička, Zdeněk; Tichý, M.; Hippler, R.

2010-01-01

Roč. 43, č. 28 (2010), s. 1-7 ISSN 0022-3727 R&D Projects: GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Grant - others:AVČR(CZ) M100100915 Institutional research plan: CEZ:AV0Z10100522 Keywords : magnetron sputtering * TiO 2 * pulse discharge * XRD * band gap Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.105, year: 2010 http://iopscience.iop.org/0022-3727/43/28/285203/

Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

Energy Technology Data Exchange (ETDEWEB)

Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

2015-07-01

Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering

International Nuclear Information System (INIS)

Tian, H.-Y.; Wang Yu; Chan, H.-L-W.; Choy, C.-L.; No, K.-S.

2005-01-01

Textured Ru thin films (∼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ - 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

Science.gov (United States)

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

International Nuclear Information System (INIS)

Vergara, L.; Galindo, R. Escobar; Martinez, R.; Sanchez, O.; Palacio, C.; Albella, J.M.

2011-01-01

The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

2012-01-01

Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

Science.gov (United States)

Choudhary, R. K.; Mishra, S. C.; Mishra, P.; Limaye, P. K.; Singh, K.

2015-11-01

Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias.

Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

2016-01-01

The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

Optical and electrical properties of Ti(Cr)O_2:N thin films deposited by magnetron co-sputtering

International Nuclear Information System (INIS)

Kollbek, K.; Szkudlarek, A.; Marzec, M.M.; Lyson-Sypien, B.; Cecot, M.; Bernasik, A.; Radecka, M.; Zakrzewska, K.

2016-01-01

Graphical abstract: - Highlights: • Co-doped well-crystallized stoichiometric Ti(Cr)O_2:N thin films are deposited. • Magnetron sputtering of ceramic TiO_2 target is a new strategy for co-doping. • Bigger contribution from substitutionally incorporated nitrogen is seen in XPS. • Significant red shift of the fundamental absorption edge is obtained. - Abstract: The paper deals with TiO_2-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N_2 atmosphere. Co-doped samples of Ti(Cr)O_2:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO_2 and TiO_2:N thin films are well crystallized as opposed to those of TiO_2:Cr and Ti(Cr)O_2:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O_2_−_x:N to 2.78 eV in the case of stoichiometric Ti(Cr)O_2:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO_2 lattice. Electrical conductivity of stoichiometric Ti(Cr)O_2:N increases in comparison to co-doped nonstoichiometric TiO_2_−_x thin film and reaches almost the same value as that of TiO_2 stoichiometric film.

Electrical properties of AlN{sub x}O{sub y} thin films prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Martin, N. [Institut FEMTO-ST, Departement MN2S, UMR 6174 (CNRS, UFC, ENSMM, UTBM) 32, Avenue de l' Observatoire 25044 BESANCON Cedex (France); Barradas, N.P.; Alves, E. [Instituto Superior Tecnico, Instituto Tecnologico Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Eyidi, D.; Beaufort, M.F.; Riviere, J.P. [Institut PPRIME, UPR 3346 CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, BP 30179 86962 Chasseneuil-Futuroscope Cedex (France); Vaz, F.; Marques, L. [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)

2012-08-31

Direct current magnetron sputtering was used to produce AlN{sub x}O{sub y} thin films, using an aluminum target, argon and a mixture of N{sub 2} + O{sub 2} (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN{sub x} and AlO{sub y} systems, prepared in similar conditions. - Highlights: Black-Right-Pointing-Pointer AlN{sub x}O{sub y} thin films were produced using magnetron sputtering. Black-Right-Pointing-Pointer AlN{sub x}O{sub y} film morphology, composition and

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Energy Technology Data Exchange (ETDEWEB)

Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

2014-04-24

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

2015-01-23

HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

Pressure dependence of Ar.sup.+./sup..sub.2./sub., ArTi.sup.+./sup., and Ti.sup.+./sup..sub.2./sub. dimer formation in a magnetron sputtering discharge

Czech Academy of Sciences Publication Activity Database

Hippler, R.; Čada, Martin; Straňák, V.; Hubička, Zdeněk; Helm, C.A.

2017-01-01

Roč. 50, č. 44 (2017), s. 1-8, č. článku 445205. ISSN 0022-3727 R&D Projects: GA ČR GA17-08389S Institutional support: RVO:68378271 Keywords : magnetron sputtering * ion mass spectrometry * dimer formation * cluster formation Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.588, year: 2016

Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

Energy Technology Data Exchange (ETDEWEB)

Fenske, F. [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12485 Berlin (Germany)], E-mail: fenske@hmi.de; Schulze, S.; Hietschold, M. [Technische Universitaet Chemnitz, Analytik an Festkoerperoberflaechen, Reichenhainer Str. 70, D-09107 Chemnitz (Germany); Schmidbauer, M. [Institut fuer Kristallzuechtung Berlin, Max-Born-Str.2, D-12489 Berlin (Germany)

2008-06-02

Using pulsed magnetron sputtering at low substrate temperature (T{sub s} = 580 {sup o}C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {l_brace}111{r_brace} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.

Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

International Nuclear Information System (INIS)

Fenske, F.; Schulze, S.; Hietschold, M.; Schmidbauer, M.

2008-01-01

Using pulsed magnetron sputtering at low substrate temperature (T s = 580 o C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed

Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

Directory of Open Access Journals (Sweden)

Morales-Hernández, Jorge

2015-09-01

Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

The Effect of Thickness on the Physical Properties of Fe2O3 Thin Films Prepared by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Baha'a A. Al-Hilli

2017-11-01

Full Text Available The objective of this study is to assess the influence of nano-particle Fe2O3 thin film thickness on some physical properties which were prepared by magnetron DC- sputtering on glass substrate at room temperature. The structure was tested with X-Ray diffraction and it was to be amorphous and to become single crystal with recognized peak in (003 after annealing at temperature 500oC. The physical properties as a function of deposition parameters and then film thickness were studied. The optical properties such as absorbance, energy gap and some optical constants are measured and found that of about (3eV energy gap.

Nanostructured multilayers of TiN/ZrN obtained by magnetron sputtering

International Nuclear Information System (INIS)

Caicedo A, J.C.; Bejarano G, G.; Gomez, M.E.; Prieto, P.; Cortez, C.; Munoz, J.

2007-01-01

In order to find an industrial application for thin films of TiN and ZrN monolayers, as well as TiN/ZrN multilayers were deposited onto silicon (100) and AISI 5160 steel substrates by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.5%) Ti and (99.5%) Zr targets in an Ar (93%)/N 2 (7%) gas mixture. For their deposition, we applied a substrate bias voltage of -100 V and a target power of 350 W. The films were deposited at a pressure of 6x10 -3 mbar and a temperature of 250 C. The structure, composition, morphology, and topography were characterized by, XRD, FTIR, SEM, AFM, and optical microscopy. Mechanical properties like hardness and elastic modulus were determined by Nanoindentation. Hardness and elastic modulus of the films increased proportionally to the number of bilayers. Finally, cutting tools were coated with 1, 2, 3, 4, 5, 6, 7, and 8 bilayers of TiN/ZrN. Cutting tests on paper blades were conducted. Increased cut quality performance was observed for cutting tools coated with 8 bilayers, as compared to uncoated tools. This work opens the possibility to use coated AISI 5160 as cutting tools for the paper industry, reducing the import of expensive high-quality tool steel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nanostructured multilayers of TiN/ZrN obtained by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Caicedo A., J.C. [CDT ASTIN, SENA Regional Valle, Cali (Colombia); Grupo de Peliculas Delgadas, Universidad del Valle (Colombia); Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Bejarano G., G. [CDT ASTIN, SENA Regional Valle, Cali (Colombia); Group of Corrosion and Protection, Antioquia University, Medellin (Colombia); Gomez, M.E. [Grupo de Peliculas Delgadas, Universidad del Valle (Colombia); Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Prieto, P. [Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Cortez, C.; Munoz, J. [Centro de Investigacion y Estudios Avanzados del CINVESTAV-IPN, Queretaro (Mexico)

2007-07-01

In order to find an industrial application for thin films of TiN and ZrN monolayers, as well as TiN/ZrN multilayers were deposited onto silicon (100) and AISI 5160 steel substrates by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.5%) Ti and (99.5%) Zr targets in an Ar (93%)/N{sub 2} (7%) gas mixture. For their deposition, we applied a substrate bias voltage of -100 V and a target power of 350 W. The films were deposited at a pressure of 6x10{sup -3} mbar and a temperature of 250 C. The structure, composition, morphology, and topography were characterized by, XRD, FTIR, SEM, AFM, and optical microscopy. Mechanical properties like hardness and elastic modulus were determined by Nanoindentation. Hardness and elastic modulus of the films increased proportionally to the number of bilayers. Finally, cutting tools were coated with 1, 2, 3, 4, 5, 6, 7, and 8 bilayers of TiN/ZrN. Cutting tests on paper blades were conducted. Increased cut quality performance was observed for cutting tools coated with 8 bilayers, as compared to uncoated tools. This work opens the possibility to use coated AISI 5160 as cutting tools for the paper industry, reducing the import of expensive high-quality tool steel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

CERN Document Server

Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

2002-01-01

The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

International Nuclear Information System (INIS)

Biederman, H.; Holland, L.

1983-01-01

Fluorocarbon films have been prepared by plasma polymerization of CF 4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF 4 [25%]-argon[75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF 4 [87%]-argon[13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF 4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined. (orig.)

ZnO:Al thin films deposited by RF-magnetron sputtering with tunable and uniform properties.

Science.gov (United States)

Miorin, E; Montagner, F; Battiston, S; Fiameni, S; Fabrizio, M

2011-03-01

Nanostructured, high quality and large area Al-doped ZnO (ZnO:Al) thin films were obtained by radiofrequency (RF) magnetron sputtering. The sample rotation during deposition has resulted in excellent spatial distribution of thickness and electro-optical properties compared to that obtained under static conditions. ZnO:Al thin films are employed in a large number of devices, including thin film solar cells, where the uniformity of the properties is a key factor for a possible up-scaling of the research results to industrially relevant substrate sizes. A chemical post etching treatment was employed achieving tunable surface nanotextures to generate light scattering at the desired wavelength for improved cell efficiency. Since the film resistivity is only slightly increased by the etching, this post-deposition step allows separating the optimization of electro-optical properties from light scattering behavior. The thin films were characterized by FE-SEM, XRD, UV-VIS spectroscopy, four probe and van der Paw techniques.

Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

Energy Technology Data Exchange (ETDEWEB)

Biederman, H.; Holland, L. (Sussex Univ., Brighton (UK). Lab. for Plasma Materials Processing)

1983-07-01

Fluorocarbon films have been prepared by plasma polymerization of CF/sub 4/ using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an R.F. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF/sub 4/(25%)-argon(75%) mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF/sub 4/(87%)-argon(13%) were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF/sub 4/ as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined.

Deposition and characterization of IrOx nanofoils on carbon nanotube templates by reactive magnetron sputtering

International Nuclear Information System (INIS)

Chen, Yi-Min; Cai, Jhen-Hong; Huang, Ying-Sheng; Lee, Kuei-Yi; Tsai, Dah-Shyang; Tiong, Kwong-Kau

2012-01-01

Large surface area IrO x nanofoils (IrO x NF) were deposited on multi-wall carbon nanotube (MWCNT) templates, forming IrO x /MWCNT nanocomposites, by reactive radio frequency magnetron sputtering using Ir metal target. The structural and spectroscopic properties of IrO x NF were characterized. The micrographs of field emission scanning electron microscopy showed the formation of foil-like structure for the as-deposited samples. Transmission electron microscopy analysis revealed the contiguous presence of glassy iridium oxide, iridium metal, and iridium dioxide nanocrystals in the foil. X-ray photoelectron spectroscopy analysis provided the information of the oxidation states and the stoichiometry of IrO x NF. Raman spectra revealed the amorphous-like phase of the as-deposited IrO x NF. The nanofoil structure provided ultra-high surface area for electrical charge storage which made the IrO x /MWCNT nanocomposites as an attractive candidate for the supercapacitor applications.

Numerical Simulation of a Double-anode Magnetron Injection Gun for 110 GHz, 1 MW Gyrotron

Science.gov (United States)

Singh, Udaybir; Kumar, Nitin; Purohit, L. P.; Sinha, Ashok K.

2010-07-01

A 40 A double-anode magnetron injection gun for a 1 MW, 110 GHz gyrotron has been designed. The preliminary design has been obtained by using some trade-off equations. The electron beam analysis has been performed by using the commercially available code EGUN and the in-house developed code MIGANS. The operating mode of the gyrotron is TE22,6 and it is operated in the fundamental harmonic. The electron beam with a low transverse velocity spread ( δ {β_{ bot max }} = 2.26% ) and the transverse-to-axial velocity ratio of the electron beam (α) = 1.37 is obtained. The simulated results of the MIG obtained with the EGUN code have been validated with another trajectory code TRAK. The results on the design output parameters obtained by both the codes are in good agreement. The sensitivity analysis has been carried out by changing the different gun parameters to decide the fabrication tolerance.

Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

Directory of Open Access Journals (Sweden)

Damon Rafieian

2015-09-01

Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

TiOx deposited by magnetron sputtering: a joint modelling and experimental study

Science.gov (United States)

Tonneau, R.; Moskovkin, P.; Pflug, A.; Lucas, S.

2018-05-01

This paper presents a 3D multiscale simulation approach to model magnetron reactive sputter deposition of TiOx⩽2 at various O2 inlets and its validation against experimental results. The simulation first involves the transport of sputtered material in a vacuum chamber by means of a three-dimensional direct simulation Monte Carlo (DSMC) technique. Second, the film growth at different positions on a 3D substrate is simulated using a kinetic Monte Carlo (kMC) method. When simulating the transport of species in the chamber, wall chemistry reactions are taken into account in order to get the proper content of the reactive species in the volume. Angular and energy distributions of particles are extracted from DSMC and used for film growth modelling by kMC. Along with the simulation, experimental deposition of TiOx coatings on silicon samples placed at different positions on a curved sample holder was performed. The experimental results are in agreement with the simulated ones. For a given coater, the plasma phase hysteresis behaviour, film composition and film morphology are predicted. The used methodology can be applied to any coater and any films. This paves the way to the elaboration of a virtual coater allowing a user to predict composition and morphology of films deposited in silico.

Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

Energy Technology Data Exchange (ETDEWEB)

Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [College of Engineering and Technology, Northeast Forestry University, Harbin 150040 (China); State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China)

2016-08-15

The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

International Nuclear Information System (INIS)

Lee, Deuk Yeon; Baik, Hong-Koo

2008-01-01

Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 x 10 -4 Ω cm at 80 deg. C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density

Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

International Nuclear Information System (INIS)

Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

2010-01-01

Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

Fracture toughness and sliding properties of magnetron sputtered CrBC and CrBCN coatings

Science.gov (United States)

Wang, Qianzhi; Zhou, Fei; Ma, Qiang; Callisti, Mauro; Polcar, Tomas; Yan, Jiwang

2018-06-01

CrBC and CrBCN coatings with low and high B contents were deposited on 316L steel and Si wafers using an unbalanced magnetron sputtering system. Mechanical properties including hardness (H), elastic modulus (E) and fracture toughness (KIc) as well as residual stresses (σ) were quantified. A clear correlation between structural, mechanical and tribological properties of coatings was found. In particular, structural analyses indicated that N incorporation in CrBC coatings with high B content caused a significant structural evolution of the nanocomposite structure (crystalline grains embedded into an amorphous matrix) from nc-CrB2/(a-CrBx, a-BCx) to nc-CrN/(a-BCx, a-BN). As a result, the hardness of CrBC coating with high B content decreased from 23.4 to 16.3 GPa but the fracture toughness was enhanced. Consequently, less cracks initiated on CrBCN coatings during tribological tests, which combined with the shielding effect of a-BN on wear debris, led to a low friction coefficient and wear rate.

Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)

Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

1994-01-01

The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)