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Sample records for magnetoresistive manganite based

  1. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  2. Colossal Magnetoresistance Manganites and Related Prototype Devices

    OpenAIRE

    Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...

  3. Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure

    International Nuclear Information System (INIS)

    Volkov, N V; Eremin, E V; Tsikalov, V S; Patrin, G S; Kim, P D; Seong-Cho, Yu; Kim, Dong-Hyun; Chau, Nguyen

    2009-01-01

    The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

  4. Colossal magnetoresistance in manganites and related prototype devices

    International Nuclear Information System (INIS)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  5. Modulation of persistent magnetoresistance by piezo-strain effect in manganite-based heterostructures

    Science.gov (United States)

    Li, W.; Yan, H.; Chai, X. J.; Wang, S. H.; Dong, X. L.; Ren, L. X.; Chen, C. L.; Jin, K. X.

    2017-05-01

    Persistent magnetoresistance effects in the phase-separated Pr0.65(Ca0.25Sr0.75)0.35MnO3/SrTiO3 and Pr0.65(Ca0.25Sr0.75)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructures under a low magnetic field are investigated. It is observed that the persistent magnetoresistance effects decrease with increasing temperatures and the values for the heterostructures on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 and SrTiO3 substrates are about 86.6% and 33.2% at 40 K, respectively. More interestingly, the applied electric field on the 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 substrate can suppress the persistent magnetoresistance effect, indicating that different energy landscapes can be dramatically modulated by the piezo-strain. These results are discussed in terms of the strain-induced competition in the ferromagnetic state and the charge-ordering phase by the energy scenario, which provide a promising approach for designing devices of electric-magnetic memories in all-oxide heterostructures.

  6. Temperature dependence of magnetoresistance in lanthanum manganite ceramics

    International Nuclear Information System (INIS)

    Gubkin, M.K.; Zalesskii, A.V.; Perekalina, T.M.

    1996-01-01

    Magnetoresistivity in the La0.9Na0.1Mn0.9(V,Co)0.1O3 and LaMnO3+δ ceramics was studied. The temperature dependence of magnetoresistance in these specimens was found to differ qualitatively from that in the La0.9Na0.1MnO3 single crystal (the magnetoresistance value remains rather high throughout the measurement range below the Curie temperature), with the maximum values being about the same (20-40% in the field of 20 kOe). Previously published data on magnetization, high frequency magnetic susceptibility, and local fields at the 139La nuclei of the specimens with similar properties attest to their magnetic inhomogeneity. The computation of the conductivity of the nonuniformly ordered lanthanum manganite was performed according to the mean field theory. The calculation results allow one to interpret qualitatively various types of experimental temperature dependences of magnetoresistance

  7. Anomalously large anisotropic magnetoresistance in a perovskite manganite

    Science.gov (United States)

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

    2009-01-01

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

  8. Magnon Broadening Effect by Magnon-Phonon Interaction in Colossal Magnetoresistance Manganites

    OpenAIRE

    Furukawa, Nobuo

    1999-01-01

    In order to study the magnetic excitation behaviors in colossal magnetoresistance manganites, a magnon-phonon interacting system is investigated. Sudden broadening of magnon linewidth is obtained when a magnon branch crosses over an optical phonon branch. Onset of the broadening is approximately determined by the magnon density of states. Anomalous magnon damping at the brillouine zone boundary observed in low Curie temperature manganites is explained.

  9. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  10. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.

    1998-07-01

    The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).

  11. Colossal magnetoresistance in layered manganite Nd2−2xSr1+ ...

    Indian Academy of Sciences (India)

    starting compounds, have been obtained. Except for x=0.4, which is found to be an antiferromagnetic insulator, all other x values yielded metal–insulator transition and ferromagnetic ordering. Keywords. Colossal magnetoresistance; layered manganites; Nd2−2x Sr1+2x Mn2O7. PACS Nos 75.30.Vn; 71.30.+h. 1. Introduction.

  12. The effect of band Jahn-Teller distortion on the magnetoresistivity of manganites: a model study

    International Nuclear Information System (INIS)

    Rout, G C; Panda, Saswati; Behera, S N

    2011-01-01

    We present a model study of magnetoresistance through the interplay of magnetisation, structural distortion and external magnetic field for the manganite systems. The manganite system is described by the Hamiltonian which consists of the s-d type double exchange interaction, Heisenberg spin-spin interaction among the core electrons, and the static and dynamic band Jahn-Teller (JT) interaction in the e g band. The relaxation time of the e g electron is found from the imaginary part of the Green's function using the total Hamiltonian consisting of the interactions due to the electron and phonon. The calculated resistivity exhibits a peak in the pure JT distorted insulating phase separating the low temperature metallic ferromagnetic phase and the high temperature paramagnetic phase. The resistivity is suppressed with the increase of the external magnetic field. The e g electron band splitting and its effect on magnetoresistivity is reported here. (paper)

  13. The effect of band Jahn-Teller distortion on the magnetoresistivity of manganites: a model study

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G C [Condensed Matter Physics Group, P G Department of Applied Physics and Ballistics, F M University, Balasore 756 019 (India); Panda, Saswati [Trident Academy of Technology, F2/A, Chandaka Industrial Estate, Bhubaneswar 751 024 (India); Behera, S N, E-mail: gcr@iopb.res.in, E-mail: saswatip7@gmail.com [National Institute of Science and Technology, Palur Hills, Berhampur 761 008 (India)

    2011-10-05

    We present a model study of magnetoresistance through the interplay of magnetisation, structural distortion and external magnetic field for the manganite systems. The manganite system is described by the Hamiltonian which consists of the s-d type double exchange interaction, Heisenberg spin-spin interaction among the core electrons, and the static and dynamic band Jahn-Teller (JT) interaction in the e{sub g} band. The relaxation time of the e{sub g} electron is found from the imaginary part of the Green's function using the total Hamiltonian consisting of the interactions due to the electron and phonon. The calculated resistivity exhibits a peak in the pure JT distorted insulating phase separating the low temperature metallic ferromagnetic phase and the high temperature paramagnetic phase. The resistivity is suppressed with the increase of the external magnetic field. The e{sub g} electron band splitting and its effect on magnetoresistivity is reported here. (paper)

  14. Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

    OpenAIRE

    Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.

    2000-01-01

    We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current...

  15. Mixed-phase description of colossal magnetoresistive manganites

    Czech Academy of Sciences Publication Activity Database

    Weiáe, A.; Loos, Jan; Fehske, H.

    2003-01-01

    Roč. 68, č. 2 (2003), s. 024402-1 - 021102-6 ISSN 0163-1829 Grant - others:DFG(DE) 436 TSE 113/33/0-2 Institutional research plan: CEZ:AV0Z1010914 Keywords : polarons * metal-insulator transitions * colossal magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  16. Colossal magnetoresistance and phase separation in manganite thin films

    Science.gov (United States)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  17. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  18. Grain-boundary effects on the magnetoresistance properties of perovskite manganite films

    International Nuclear Information System (INIS)

    Gupta, A.; Gong, G.Q.; Xiao, G.; Duncombe, P.R.; Lecoeur, P.; Trouilloud, P.; Wang, Y.Y.; Dravid, V.P.; Sun, J.Z.

    1996-01-01

    The role of grain boundaries in the magnetoresistance (MR) properties of the manganites has been investigated by comparing the properties of epitaxial and polycrystalline films of La 0.67 D 0.33 MnO 3-δ (D=Ca,Sr, or vacancies). While the MR in the epitaxial films is strongly peaked near the ferromagnetic transition temperature and is very small at low temperatures, the polycrystalline films show large MR over a wide temperature range down to 5 K. The results are explained in terms of switching of magnetic domains in the grains and disorder-induced canting of Mn spins in the grain-boundary region. copyright 1996 The American Physical Society

  19. Magnetorefractive effect in manganites with a colossal magnetoresistance in the visible spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Sukhorukov, Yu. P., E-mail: suhorukov@imp.uran.ru; Telegin, A. V. [Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation); Granovsky, A. B., E-mail: granov@magn.ru; Gan' shina, E. A. [Moscow State University, Faculty of Physics (Russian Federation); Zhukov, A.; Gonzalez, J. [Universidad del Pais Vasco (UPV)/Euskal Herriko Unibertsitatea (EHU), Departamento de Fisica de Materiales, Facultad de Quimica (Spain); Herranz, G. [Institut de Ciencia de Materials de Barcelona (ICMAB)-CSIC (Spain); Caicedo, J. M. [Universidad del Pais Vasco (UPV)/Euskal Herriko Unibertsitatea (EHU), Departamento de Fisica de Materiales, Facultad de Quimica (Spain); Yurasov, A. N. [Moscow State Institute of Radio-Engineering, Electronics, and Automation (Technical University) (Russian Federation); Bessonov, V. D. [Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation); Kaul' , A. R.; Gorbenko, O. Yu.; Korsakov, I. E. [Moscow State University, Faculty of Physics (Russian Federation)

    2012-01-15

    The magnetotransmission, magnetoreflection, and magnetoresistance of the La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and La{sub 0.9}Ag{sub 0.1}MnO{sub 3} epitaxial films have been investigated. It has been found that the films exhibit a significant magnetorefractive effect in the case of reflection and transmission of light in the fundamental absorption region both in the vicinity of the Curie temperature and at low temperatures. It has been shown that the magnetorefractive effect in the infrared spectral region of the manganites is determined by a high-frequency response to magnetoresistance, whereas the magnetorefractive effect in the visible spectral region of these materials is associated with a change in the electronic structure in response to a magnetic field, which, in turn, leads to a change in the electron density of states, the probability of interband optical transitions, and the shift of light absorption bands. The obtained values of the magnetotransmittance and magnetoreflectance in the visible spectral region are less than those observed in the infrared region of the spectrum, but they are several times greater than the linear magneto-optical effects. As a result, the magnetorefractive effect, which is a nongyrotropic phenomenon, makes it possible to avoid the use of light analyzers and polarizers in optical circuits.

  20. Magnetorefractive effect in manganites with a colossal magnetoresistance in the visible spectral region

    International Nuclear Information System (INIS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Granovsky, A. B.; Gan’shina, E. A.; Zhukov, A.; Gonzalez, J.; Herranz, G.; Caicedo, J. M.; Yurasov, A. N.; Bessonov, V. D.; Kaul’, A. R.; Gorbenko, O. Yu.; Korsakov, I. E.

    2012-01-01

    The magnetotransmission, magnetoreflection, and magnetoresistance of the La 0.7 Ca 0.3 MnO 3 and La 0.9 Ag 0.1 MnO 3 epitaxial films have been investigated. It has been found that the films exhibit a significant magnetorefractive effect in the case of reflection and transmission of light in the fundamental absorption region both in the vicinity of the Curie temperature and at low temperatures. It has been shown that the magnetorefractive effect in the infrared spectral region of the manganites is determined by a high-frequency response to magnetoresistance, whereas the magnetorefractive effect in the visible spectral region of these materials is associated with a change in the electronic structure in response to a magnetic field, which, in turn, leads to a change in the electron density of states, the probability of interband optical transitions, and the shift of light absorption bands. The obtained values of the magnetotransmittance and magnetoreflectance in the visible spectral region are less than those observed in the infrared region of the spectrum, but they are several times greater than the linear magneto-optical effects. As a result, the magnetorefractive effect, which is a nongyrotropic phenomenon, makes it possible to avoid the use of light analyzers and polarizers in optical circuits.

  1. NMR of Colossal Magnetoresistive Manganites and Expanded Lattice Intermetallics at High Pressure

    International Nuclear Information System (INIS)

    Kapusta, Cz.; Riedi, P. C.

    2001-01-01

    A survey is given of NMR studies of colossal magnetoresistive manganese perovskites (RE,Ca,Sr,Ba)MnO 3 (RE = rare earth) and the interstitially modified permanent magnet materials, RE 2 Fe 17 A x (A = N, C, H) at ambient pressure and at applied pressures of up to 10 kbar. The different pressure behavior of the Mn hyperfine field found in the metallic and in the insulating manganite compounds is discussed and related to the micro- and macroscopic properties of these magnetically inhomogeneous materials. In the RE 2 Fe 17 A x compounds a different pressure behavior of the hyperfine field at the RE sites with different number and type of interstitial atom neighbors is discussed in terms of local compressibility. The influence of the interstitial modification and the applied pressure on the RE hyperfine field and quadrupole splitting is analyzed and the impact of the 'chemical pressure' and covalent effects on these quantities is compared. A comparison of the behavior of the magnetic state of the 4f electron shell with pressure and with interstitial modification is made and the relation to the magnetocrystalline anisotropy is discussed

  2. A nanomagnetic study of phase transition in manganite thin films and ballistic magnetoresistance in magnetic nanocontacts

    Science.gov (United States)

    Chung, Seok-Hwan

    This work focuses on two largely unexplored phenomena in micromagnetics: the temperature-driven paramagnetic insulator to ferromagnetic (FM) metallic phase transition in perovskite manganite and ballistic magnetoresistance in spin-polarized nanocontacts. To investigate the phase transition, an off-the-shelf commercial scanning force microscope was redesigned for operation at temperatures from 350 K to 100 K. This adaptation is elaborated in this thesis. Using this system, both ferromagnetic and charge-ordered domain structures of (La 1-xPrx)0.67Ca0.33MnO3 thin film were observed by magnetic force microscopy (MFM) and electric force microscopy (EFM) operated in the vicinity of the peak resistance temperature (Tp). Predominantly in-plane oriented FM domains of sub-micrometer size emerge below Tp and their local magnetic moment increased as the temperature is reduced. Charge-ordered insulating regions show a strong electrostatic interaction with an EFM tip at a few degrees above Tp and the interaction correlates well with the temperature dependence of resistivity of the film. Cross-correlation analysis between topography and magnetic structure on several substrates indicates FM domains form on the flat regions of the surface, while charge ordering occurs at surface protrusions. In the investigation of ballistic magnetoresistance, new results on half-metallic ferromagnets formed by atomic or nanometer contacts of CrO2-CrO 2 and CrO2-Ni are presented showing magnetoconductance as high as 400%. Analysis of the magnetoconductance versus conductance data for all materials known to exhibit so-called ballistic magnetoresistance strongly suggests that magnetoconductance of nanocontacts follows a universal mechanism. If the maximum magnetoconductance is normalized to unity and the conductance is scaled with the resistivity of the material, then all data points fall onto a universal curve independent of the contact material and the transport mechanism. The analysis has been

  3. The influence of band Jahn-Teller effect and magnetic order on the magneto-resistance in manganite systems

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G.C., E-mail: gcr@iopb.res.i [Condensed Matter Physics Group, Department of Applied Physics and Ballistics, F.M. University, Balasore, Orissa 756019 (India); Parhi, Nilima [Department of Physics, M.P.C. (Autonomous) College, Baripada, Orissa 757001 (India); Behera, S.N. [Institute of Material Science, Bhubaneswar 751004 (India)

    2009-08-01

    A model calculation is presented in order to study the magneto-resistivity through the interplay between magnetic and structural transitions for the manganite systems. The model consists of an orbitally doubly degenerate conduction band and a periodic array of local moments of the t{sub 2g} electrons. The band electrons interact with the local t{sub 2g} electrons via the s-f hybridization. The phonons interact with the band electrons through static and dynamic band Jahn-Teller (J-T) interaction. The model Hamiltonian including the above terms is solved for the single particle Green's functions and the imaginary part of the self-energy gives the electron relaxation time. Thus the magneto-resistivity (MR) is calculated from the Drude formula. The MR effect is explained near the magnetic and structural transition temperatures.

  4. Surface characterization of colossal magnetoresistive manganites La1-xSr xMnO3 using photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Mannella, N.; Rosenhahn, A.; Nambu, A.; Sell, B.C.; Mun, B.S.; Yang, S.-H.; Marchesini, S.; Watanabe, M.; Ibrahim, K.; Ritchey, S.B.; Tomioka, Y.; Fadley, C.S.

    2006-01-01

    We have studied the temperature and time dependence of Surface chemical composition and atomic structure of in situ fractured colossal magnetoresistive perovskites La 1-x Sr x MnO (x = 0.3, 0.4) using core-level photoelectron spectroscopy and diffraction, simultaneous with observing marked changes in both core and valence electronic structure on going above the Curie temperature [N. Mannella et al., Phys. Rev. Lett. 92 (2004) 166401]. Stoichiometric analyses via core-level intensity ratios show that the near-surface composition is very nearly the same as that of the nominal (bulk) stoichiometry and further show that, during duration of our experiments, the degree of surface stoichiometry alteration or contamination has been minimal. The effects of photoelectron diffraction on such analyses are also explored. We comment on the degree to which near-surface composition or atomic-structure alterations might influence spectroscopic investigations of these manganites, or other strongly correlated materials

  5. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  6. Correlation between vacancies and magnetoresistance changes in FM manganites using the Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Agudelo-Giraldo, J.D. [PCM Computational Applications, Universidad Nacional de Colombia-Sede Manizales, Km. 9 vía al aeropuerto, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [PCM Computational Applications, Universidad Nacional de Colombia-Sede Manizales, Km. 9 vía al aeropuerto, Manizales (Colombia); Restrepo, J. [Grupo de Magnetismo y Simulación, Instituto de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia)

    2015-10-01

    The Metropolis algorithm and the classical Heisenberg approximation were implemented by the Monte Carlo method to design a computational approach to the magnetization and resistivity of La{sub 2/3}Ca{sub 1/3}MnO{sub 3}, which depends on the Mn ion vacancies as the external magnetic field increases. This compound is ferromagnetic, and it exhibits the colossal magnetoresistance (CMR) effect. The monolayer was built with L×L×d dimensions, and it had L=30 umc (units of magnetic cells) for its dimension in the x–y plane and was d=12 umc in thickness. The Hamiltonian that was used contains interactions between first neighbors, the magnetocrystalline anisotropy effect and the external applied magnetic field response. The system that was considered contains mixed-valence bonds: Mn{sup 3+eg’}–O–Mn{sup 3+eg}, Mn{sup 3+eg}–O–Mn{sup 4+d3} and Mn{sup 3+eg’}–O–Mn{sup 4+d3}. The vacancies were placed randomly in the sample, replacing any type of Mn ion. The main result shows that without vacancies, the transitions T{sub C} (Curie temperature) and T{sub MI} (metal–insulator temperature) are similar, whereas with the increase in the vacancy percentage, T{sub MI} presented lower values than T{sub C}. This situation is caused by the competition between the external magnetic field, the vacancy percentage and the magnetocrystalline anisotropy, which favors the magnetoresistive effect at temperatures below T{sub MI}. Resistivity loops were also observed, which shows a direct correlation with the hysteresis loops of magnetization at temperatures below T{sub C}. - Highlights: • Changes in the resistivity of FM materials as a function of the temperature and external magnetic field can be obtained by the Monte Carlo method, Metropolis algorithm, classical Heisenberg and Kronig–Penney approximation for magnetic clusters. • Increases in the magnetoresistive effect were observed at temperatures below T{sub MI} by the vacancies effect. • The resistive hysteresis

  7. Temperature dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La1-xSrxMnO3

    International Nuclear Information System (INIS)

    Arenholz, Elke; Mannella, N.; Booth, C.H.; Rosenhahn, A.; Sell, B.C.; Nambu, A.; Marchesini, S.; Mun, B. S.; Yang, S.-H.; Watanabe, M.; Ibrahim, K.; Arenholz, E.; Young, A.; Guo, J.; Tomioka, Y.; Fadley, C.S.

    2007-01-01

    We have studied the temperature-dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La 1-x Sr x MnO 3 (x= 0.3-0.4) with core and valence level photoemission (PE), x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), resonant inelastic x-ray scattering (RIXS), extended x-ray absorption fine structure (EXAFS) spectroscopy and magnetometry. As the temperature is varied across the Curie temperature T c , our PE experiments reveal a dramatic change of the electronic structure involving an increase in the Mn spin moment from ∼ 3 (micro)B to ∼ 4 (micro)B, and a modification of the local chemical environment of the other constituent atoms indicative of electron localization on the Mn atom. These effects are reversible and exhibit a slow-timescale ∼200 K-wide hysteresis centered at T c . Based upon the probing depths accessed in our PE measurements, these effects seem to survive for at least 35-50 (angstrom) inward from the surface, while other consistent signatures for this modification of the electronic structure are revealed by more bulk sensitive spectroscopies like XAS and XES/RIXS. We interpret these effects as spectroscopic fingerprints for polaron formation, consistent with the presence of local Jahn-Teller distortions of the MnO 6 octahedra around the Mn atom, as revealed by the EXAFS data. Magnetic susceptibility measurements in addition show typical signatures of ferro-magnetic clusters formation well above the Curie temperature

  8. Strained superlattices and magnetic tunnel junctions based on doped manganites

    International Nuclear Information System (INIS)

    Yafeng Lu

    2001-01-01

    In the first part of this work the effect of biaxial strain on the structure and transport properties of doped manganites has been studied to explore the relevance of Jahn-Teller electron-lattice interaction for the CMR phenomenon in these materials. A series of high quality, coherently strained La 2/3 (Ca or Ba) 1/3 MnO 3 /SrTiO 3 superlattices with different modulation periods have been fabricated on (001) SrTiO 3 and NdGaO 3 substrates by laser molecular beam epitaxy. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). The fabricated superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.2 ∝0.03 ). The in-plane coherency strain could be varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting lattice distortion of La 2/3 (Ca or Ba) 1/3 MnO 3 . By the in-plane coherency strain the out-of-plane lattice constant could be continuously adjusted by varying the relative thickness of the SrTiO 3 and La 2/3 (Ca or Ba) 1/3 MnO 3 layers: the c-axis lattice constant of La 2/3 Ba 1/3 MnO 3 was found to vary from 3.910 A to 3.975 A due to a compressive in-plane strain, whereas the c-axis constant of La 2/3 Ca 1/3 MnO 3 was found to change from 3.87 A to 3.79A due to tensile in-plane strain. The strain results in a biaxial distortion ε bi of La 2/3 (Ca or Ba) 1/3 MnO 3 that strongly affects the electrical transport properties and the magnetoresistance. Our measurements show that there is a clear correlation between ε bi and the temperature T p corresponding to the maximum in the resistivity versus temperature curves as well as the measured magnetoresistance in the two systems. In the second part of this work we have investigated the spin-dependent tunneling in trilayer structures of La 2/3 Ba 1/3 MnO 3 /SrTiO 3 /La 2/3 Ba 1/3 MnO 3 . (orig.)

  9. Twinning microstructure and charge ordering in the colossal magnetoresistive manganite Nd1/2Sr1/2MnO3

    International Nuclear Information System (INIS)

    Luo, Z.P.; Miller, D.J.; Mitchell, J.F.

    2000-01-01

    Charge ordering (C.O.) in the colossal magnetoresistive (CMR) manganites gives rise to an insulating, high-resistance state. This charge ordered state can be melted into a low-resistance metallic-like state by the application of magnetic field. Thus, the potential to attain high values of magnetoresistance with the application of small magnetic fields may be aided by a better understanding of the charge-ordering phenomenon. This study focused on microstructural characterization in Nd 1/2 Sr 1/2 MnO 3 . In Nd 1/2 Sr 1/2 MnO 3 , the nominal valence of Mn is 3.5+. On cooling, charge can localize and lead to a charge ordering between Mn 3+ and Mn 4+. The ordering of charge results in a superlattice structure and a reduction in symmetry. Thin foil specimens were prepared from bulk samples by conventional thinning and ion milling (at LiqN 2 temperature) methods. The room temperature TEM observation of Nd 1/2 Sr 1/2 MnO 3 reveals that it contains a highly twinned microstructure, together with a small number of stacking faults (SFS). A figure shows the same area of the specimen at different zone axes obtained by tilting around two perpendicular directions as indicated. Three grains A, B and C are labeled for each of the zone axes. The room temperature EDPs from the matrix and twins shows an approximate 90degree rotation suggesting a 90degree twin orientation. These results are further confirmed by C.O. at low temperatures. The twinning planes can be determined by tilting with large angles

  10. Magnetoelectric effects in manganites

    Science.gov (United States)

    Jeen, Hyoung Jeen

    Research on manganites has been conducted for more than half century. Recent discoveries of colossal responses to external fields such as colossal magnetoresistance effects and correlation among spin, orbital, and lattice in phase separated manganites and multiferroic manganites have motivated me to understand these materials. The main purpose of this dissertation is to understand magnetoelectric effects in phase separated (La1-yPr y)1-xCaxMnO3 (LPCMO) thin films and multiferroic BiMnO3 (BMO) thin films. First, high quality phase separated manganite thin films have been successfully grown. To grow the high quality manganite thin films, extensive effort was devoted to fine tuning of oxygen pressure, temperature, and laser fluence during film growth. As-grown films were characterized with various ex-situ techniques: magnetization measurements, transport measurements, x-ray diffraction, atomic force microscopy, and/or transmission electron microscopy to remove the effects of impurities and unwanted strains except substrate induced strain. Second, three major results were obtained in high quality phase separated LPCMO thin films. These results are based on the dynamic nature of phases in LPCMO. 1) LPCMO thin films showed single domain to multi-domain transition during cooling. This transition can be tuned by substrate stress induced in-plane magnetic anisotropy. 2) Evidence for the origin of colossal electroresistance (CER) effect has been observed. The CER is triggered by dielectrophoresis, or movements of ferromagnetic metallic (FMM) phase, which is manifested in anisotropic transport properties in microfabricated LPCMO cross structures. This fluidic nature of the FMM phase in LPCMO under high electric fields lead to exotic magnetoelectric effects. 3) Electric field effects on magnetotransport properties have been observed. This phenomena can also be tuned by the combined effect of substrate strain and current flow. This combined effect of electric and magnetic

  11. Microscopic modelling of doped manganites

    International Nuclear Information System (INIS)

    Weisse, Alexander; Fehske, Holger

    2004-01-01

    Colossal magneto-resistance manganites are characterized by a complex interplay of charge, spin, orbital and lattice degrees of freedom. Formulating microscopic models for these compounds aims at meeting two conflicting objectives: sufficient simplification without excessive restrictions on the phase space. We give a detailed introduction to the electronic structure of manganites and derive a microscopic model for their low-energy physics. Focusing on short-range electron-lattice and spin-orbital correlations we supplement the modelling with numerical simulations

  12. Role of spin polarized tunneling in magnetoresistance and low

    Indian Academy of Sciences (India)

    Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

  13. Experimental investigation of temperature dependence of the magnetic susceptibility (T) of manganites La1-xAxMnO3

    International Nuclear Information System (INIS)

    Salakhitdinova, M.; Kuvandikov, O.; Shakarov, Kh.; Shodiev, Z.

    2007-01-01

    Full text: he interest to lanthanoid manganites is based that enormous magnetoresistance is found in them and this materials are capable to test diverse structural and magnetic phase transformations. The work is devoted to experimental investigation of temperature dependence of the magnetic susceptibility (T) of manganites La 1-x A x MnO 3 which doped with Ag, K, Sr metals in wide temperature interval 50-8500 C, as well as to determination of their magnetic characteristics from this dependence. The dependence (T) was measured by the Faraday method with high-temperature magnetic pendulum balance in the atmosphere of refined helium. Maximal relative error of the measurements did not exceed 3 %. The analysis of experimental (T) dependence of investigated manganites has shown that the rise of stoichiometric rate of doped metals the temperature dependence of magnetic susceptibility of manganites monotonously is decreased. (authors)

  14. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jiwuer, Jilili

    2016-01-01

    Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors

  15. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  16. Spin-polarized transport in manganite-based magnetic nano structures

    International Nuclear Information System (INIS)

    Granada, Mara

    2007-01-01

    Giant magnetoresistance (G M R) and tunnel magnetoresistance are spin polarized transport phenomena which are observed in magnetic multilayers.They consist in a large variation of the electrical resistivity of the system depending on whether the magnetizations of the magnetic layers are aligned parallel or anti-parallel to each other. In order to be able to align the magnetic layers by means of an external magnetic field, they must not be strongly ferromagnetically coupled.The extrinsic magnetoresistance effects in magnetic multilayers, either G M R in the case of a metallic spacer, or T M R in the case of an insulating spacer, are observed at low magnetic fields, which makes these phenomena interesting for technological applications.We studied the possibility of using the ferromagnetic manganite La 0 ,75Sr 0 ,25MnO 3 (L S M O) in magneto resistive devices, with different materials as a spacer layer.As the main result of this work, we report G M R and T M R measurements in L S M O/LaNiO 3 /L S M O and L S M O/CaMnO 3 /L S M O tri layers, respectively, observed for the first time in these systems.This work included the deposition of films and multilayers by sputtering, the structural characterization of the samples and the study of their magnetic and electric transport properties.Our main interest was the study of G M R in L S M O/LaNiO 3 /L S M O tri layers.It was necessary to firstly characterize the magnetic coupling of L S M O layers through the L N O spacer. After that, we performed electric transport measurements with the current in the plane of the samples.We measured a G M R contribution of ∼ 0,55 % at T = 83 K.We designed a procedure for patterning the samples by e-beam lithography for electric transport measurements with the current perpendicular to the plane. We also performed the study of L S M O/CaMnO 3 /L S M O tri layers with an insulating spacer.We studied the magnetic coupling, as in the previous case.Then we fabricated a tunnel junction for

  17. Colossal magnetoresistance

    International Nuclear Information System (INIS)

    Fontcuberta, J.

    1999-01-01

    In 1986 Alex Mueller and Georg Bednorz of IBM Zurich discovered high-temperature superconductivity in copper-based oxides. This finding, which was rewarded with the Nobel Prize for Physics in the following year, triggered intense research into the properties of the transition metal oxides. Since then scientists have questioned the very nature of the metallic state in these materials. A few years after the initial discovery, in 1993, more excitement greeted reports that certain manganese oxides showed a huge change in electrical resistivity when a magnetic field was applied. This effect is generally known as magnetoresistance, but the resistivity change observed in these oxides was so large that it could not be compared with any other forms of magnetoresistance. The effect observed in these materials the manganese perovskites was therefore dubbed ''colossal'' magnetoresistance to distinguish it from the giant magnetoresistance observed in magnetic multilayers. In this article the author explains why magnetoresistance is an expanding field of physics research. (UK)

  18. Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

    International Nuclear Information System (INIS)

    Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

    2016-01-01

    We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

  19. Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.

    Science.gov (United States)

    Wang, Zhiguang; Wang, Xinjun; Li, Menghui; Gao, Yuan; Hu, Zhongqiang; Nan, Tianxiang; Liang, Xianfeng; Chen, Huaihao; Yang, Jia; Cash, Syd; Sun, Nian-Xiang

    2016-11-01

    A highly sensitive flexible magnetic sensor based on the anisotropic magnetoresistance effect is fabricated. A limit of detection of 150 nT is observed and excellent deformation stability is achieved after wrapping of the flexible sensor, with bending radii down to 5 mm. The flexible AMR sensor is used to read a magnetic pattern with a thickness of 10 μm that is formed by ferrite magnetic inks. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  1. Fabrication and Transport Properties of Manganite-Polyacrylamide-Based Composites

    Directory of Open Access Journals (Sweden)

    Viorel Sandu

    2009-01-01

    Full Text Available We present the fabrication and transport properties of a series of composites made of La2/3Sr1/3MnO3 and acrylamide-based copolymers. The most important result is the very narrow transition, of only 27 K, displayed by the peak that appears around the metal-insulator transition of the composites made with poly(acrylamide-vinylacetate. Although the amount of polymer is rather low, different copolymers change drastically the electric transport characteristics.

  2. Electroresistive and magnetoresistive effects in electron doped manganite La0.7Ce0.3MnO3 thin films

    International Nuclear Information System (INIS)

    Bajaj, Kavita; Jesudasan, John; Bagwe, Vivas; Raychaudhuri, Pratap

    2007-01-01

    Full text: The influence of electric current and magnetic field separately and in conjugation on the transport behavior of patterned La 0.7 Ce 0.3 MnO 3 thin films on (001) LaAlO 3 substrate is studied. Measurements were carried out in the regime of low current densities, for dc currents. In absence of magnetic field significant reduction in peak resistance (R p ) was found with increasing bias current. This effect is also present when a magnetic field is applied though the magnitude of the electroresistance (ER=(R(I=0.05μA)-R(I=50μA))/R(I=50μA)) decreases. The metal-insulator transition temperature (T p ) increases both with increasing current and with magnetic field. The current-voltage characteristics at various temperatures above and below T p show nonlinearity for small currents due to electroresistance and large currents due to Joule heating. The behavior of resistance with current is similar at various temperatures decreasing initially with increasing current and then nearly leveling off. We observe an interesting correlation between effect of electric current and magnetic field. The magnetoresistance (MR (R H=0 -R H=1T )/R H=0 ) decreases with increasing bias current, while ER decreases with increasing magnetic field. Both ER and MR show a maximum near T p . This interesting correlation between these two effects suggests that both these effects suggests that both these effects arise from the same origin

  3. Magnetoresistive logic and biochip

    International Nuclear Information System (INIS)

    Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-01-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems

  4. Colossal Magnetoresistance in La-Y-Ca-Mn-O Films

    NARCIS (Netherlands)

    Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.

    1996-01-01

    Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of

  5. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  6. Wheatstone bridge giant-magnetoresistance based cell counter.

    Science.gov (United States)

    Lee, Chiun-Peng; Lai, Mei-Feng; Huang, Hao-Ting; Lin, Chi-Wen; Wei, Zung-Hang

    2014-07-15

    A Wheatstone bridge giant magnetoresistance (GMR) biosensor was proposed here for the detection and counting of magnetic cells. The biosensor was made of a top-pinned spin-valve layer structure, and it was integrated with a microchannel possessing the function of hydrodynamic focusing that allowed the cells to flow in series one by one and ensured the accuracy of detection. Through measuring the magnetoresistance variation caused by the stray field of the magnetic cells that flowed through the microchannel above the GMR biosensor, we can not only detect and count the cells but we can also recognize cells with different magnetic moments. In addition, a magnetic field gradient was applied for the separation of different cells into different channels. Copyright © 2014 Elsevier B.V. All rights reserved.

  7. Phase separation in La-Ca manganites: Magnetic field effects

    International Nuclear Information System (INIS)

    Tovar, M.; Causa, M.T.; Ramos, C.A.; Laura-Ccahuana, D.

    2008-01-01

    The coexistence of magnetic phases seems to be a characteristic of the La-Ca family of in colossal magnetoresistant manganites. We have analyzed this phenomenon in terms of a free energy, F, where magnetic and electronic contributions of two coexistent phases are included. Three order parameters describe the behavior of the mixed material: the magnetization of each phase and the metallic fraction. Due to the coupling between order parameters there is a range: T**≤T≤T* where coexistence is possible. Values for the phenomenological parameters are obtained from the experiment. In this paper we analyze the effects of an applied magnetic field on the range of T where the phase coexistence takes place, based on results obtained from dc-magnetization and ESR measurements

  8. Phase separation in La-Ca manganites: Magnetic field effects

    Energy Technology Data Exchange (ETDEWEB)

    Tovar, M; Causa, M T [Centro Atomico Bariloche and Instituto Balseiro, Comision Nacional de Energia Atomica and Universidad Nacional de Cuyo, 8400 San Carlos de Bariloche, Rio Negro (Argentina); Ramos, C.A. [Centro Atomico Bariloche and Instituto Balseiro, Comision Nacional de Energia Atomica and Universidad Nacional de Cuyo, 8400 San Carlos de Bariloche, Rio Negro (Argentina)], E-mail: cramos@cab.cnea.gov.ar; Laura-Ccahuana, D [Centro Atomico Bariloche and Instituto Balseiro, Comision Nacional de Energia Atomica and Universidad Nacional de Cuyo, 8400 San Carlos de Bariloche, Rio Negro (Argentina); Universidad Nacional de Ingenieria, Av. Tupac Amaru 210, Rimac/Lima 25 (Peru)

    2008-02-15

    The coexistence of magnetic phases seems to be a characteristic of the La-Ca family of in colossal magnetoresistant manganites. We have analyzed this phenomenon in terms of a free energy, F, where magnetic and electronic contributions of two coexistent phases are included. Three order parameters describe the behavior of the mixed material: the magnetization of each phase and the metallic fraction. Due to the coupling between order parameters there is a range: T**{<=}T{<=}T* where coexistence is possible. Values for the phenomenological parameters are obtained from the experiment. In this paper we analyze the effects of an applied magnetic field on the range of T where the phase coexistence takes place, based on results obtained from dc-magnetization and ESR measurements.

  9. Colossal magnetoresistance manganites: A new approach

    Indian Academy of Sciences (India)

    Unknown

    hopping, and band-like, nonpolaronic states b, leading to a new 2-band .... implications of the model, we have ignored spatial correlations of the orbital structure or .... induced t2g spin alignment (maximum near Tc) increasing D and thus b.

  10. A device model framework for magnetoresistive sensors based on the Stoner–Wohlfarth model

    International Nuclear Information System (INIS)

    Bruckner, Florian; Bergmair, Bernhard; Brueckl, Hubert; Palmesi, Pietro; Buder, Anton; Satz, Armin; Suess, Dieter

    2015-01-01

    The Stoner–Wohlfarth (SW) model provides an efficient analytical model to describe the behavior of magnetic layers within magnetoresistive sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. - Highlights: • An efficient device model framework for various types of magnetoresistive sensors is presented. • The model is based on the analytical solution of the Stoner–Wohlfarth model. • Numerical optimization methods provide optimal model parameters for a different application cases. • The model is applied to several application cases and is able to reproduce measured hysteresis and swiching behavior

  11. Negative magnetoresistance of pitch-based carbon fibers Temperature and pressure dependence

    Science.gov (United States)

    Hambourger, P. D.

    1986-01-01

    The negative transverse magnetoresistance of high-modulus pitch-based carbon fibers has been measured over the temperature range 1.3-4.2 K at ambient pressure and at 4.2 K under hydrostatic pressure up to 16 kbar. At low fields (less than 0.5 torr) the magnitude of the magnetoresistance increases markedly as the temperature is lowered from 4.2 K to 1.3 K, in disagreement with Bright's theoretical model, and decreases with pressure at the rate -0.6 percent/kbar.

  12. Magnetoresistance of galfenol-based magnetic tunnel junction

    International Nuclear Information System (INIS)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Eddrief, M.; Marangolo, M.

    2015-01-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe 1-x Ga x ) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude

  13. Epitaxial stabilization of ultra thin films of electron doped manganites

    Energy Technology Data Exchange (ETDEWEB)

    Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-05-19

    Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

  14. Electronically soft phases in manganites.

    Science.gov (United States)

    Milward, G C; Calderón, M J; Littlewood, P B

    2005-02-10

    The phenomenon of colossal magnetoresistance in manganites is generally agreed to be a result of competition between crystal phases with different electronic, magnetic and structural order; a competition which can be strong enough to cause phase separation between metallic ferromagnetic and insulating charge-modulated states. Nevertheless, closer inspection of phase diagrams in many manganites reveals complex phases where the two order parameters of magnetism and charge modulation unexpectedly coexist. Here we show that such experiments can be naturally explained within a phenomenological Ginzburg-Landau theory. In contrast to models where phase separation originates from disorder or as a strain-induced kinetic phenomenon, we argue that magnetic and charge modulation coexist in new thermodynamic phases. This leads to a rich diagram of equilibrium phases, qualitatively similar to those seen experimentally. The success of this model argues for a fundamental reinterpretation of the nature of charge modulation in these materials, from a localized to a more extended 'charge-density wave' picture. The same symmetry considerations that favour textured coexistence of charge and magnetic order may apply to many electronic systems with competing phases. The resulting 'electronically soft' phases of matter with incommensurate, inhomogeneous and mixed order may be general phenomena in correlated systems.

  15. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  16. Roll Attitude Determination of Spin Projectile Based on GPS and Magnetoresistive Sensor

    Directory of Open Access Journals (Sweden)

    Dandan Yuan

    2017-01-01

    Full Text Available Improvement in attack accuracy of the spin projectiles is a very significant objective, which increases the overall combat efficiency of projectiles. The accurate determination of the projectile roll attitude is the recent objective of the efficient guidance and control. The roll measurement system for the spin projectile is commonly based on the magnetoresistive sensor. It is well known that the magnetoresistive sensor produces a sinusoidally oscillating signal whose frequency slowly decays with time, besides the possibility of blind spot. On the other hand, absolute sensors such as GPS have fixed errors even though the update rates are generally low. To earn the benefit while eliminating weaknesses from both types of sensors, a mathematical model using filtering technique can be designed to integrate the magnetoresistive sensor and GPS measurements. In this paper, a mathematical model is developed to integrate the magnetoresistive sensor and GPS measurements in order to get an accurate prediction of projectile roll attitude in a real flight time. The proposed model is verified using numerical simulations, which illustrated that the accuracy of the roll attitude measurement is improved.

  17. Intrinsic and extrinsic magnetic properties of the naturally layered manganites

    International Nuclear Information System (INIS)

    Berger, A.; Mitchell, J. F.; Miller, D. J.; Jiang, J. S.; Bader, S. D.

    1999-01-01

    Structural and magnetic properties of the two-layered Ruddlesden-Popper phase SrO(La 1-x Sr x MnO 3 ) 2 with x = 0.3--0.5 are highlighted. Intrinsic properties of these naturally layered manganites include a colossal magnetoresistance, a composition-dependent magnetic anisotropy, and almost no remanence. Above the Curie temperature there is a non-vanishing extrinsic magnetization attributed to intergrowths (stacking faults in the layered structure). These lattice imperfections consist of additional or missing manganite layers, as observed in transmission electron microscopy. Their role in influencing the properties of the host material is highlighted

  18. Silica-coated manganite and Mn-based ferrite nanoparticles: a comparative study focused on cytotoxicity

    Czech Academy of Sciences Publication Activity Database

    Kaman, Ondřej; Dědourková, T.; Koktan, Jakub; Kuličková, Jarmila; Maryško, Miroslav; Veverka, Pavel; Havelek, R.; Královec, K.; Turnovcová, Karolína; Jendelová, Pavla; Schröfel, A.; Svoboda, L.

    2016-01-01

    Roč. 18, č. 4 (2016), 1-18, č. článku 100. ISSN 1388-0764 R&D Projects: GA ČR GA15-10088S Institutional support: RVO:68378271 ; RVO:68378041 Keywords : magnetic nanoparticles * manganite * ferrite * in vitro toxicity * stem cells Subject RIV: BM - Solid Matter Physics ; Magnetism; EB - Genetics ; Molecular Biology (UEM-P) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Acoustics (UEM-P) Impact factor: 2.020, year: 2016

  19. Inhomogeneity in the spin channel of ferromagnetic CMR manganites

    Energy Technology Data Exchange (ETDEWEB)

    Heffner, R.H.; Sonier, J.E.; MacLaughlin, D.E.; Nieuwenhuys, G.J.; Mezei, F.; Ehlers, G.; Mitchell, J.F.; Cheong, S.-W

    2003-02-01

    Colossal magnetoresistance manganites are archetypes in which to study the strong coupling between spin, charge and lattice degrees of freedom in materials. We present muon spin-lattice relaxation data in ferromagnetic (FM) ground state materials from the manganite series La{sub 1-x}Ca{sub x}MnO{sub 3} and La{sub 1-x-y}Pr{sub y}Ca{sub x}MnO{sub 3}. These measurements reveal several characteristic relaxation modes arising from the strong spin-charge-lattice interactions. We also present results from neutron-spin-echo spectroscopy, which directly measures the spin-spin correlation function in a time domain comparable to {mu}SR. A qualitative model for the FM transition in the manganites involving microscopic phase separation is suggested by these data.

  20. Piezoresistivity in films of nanocrystalline manganites.

    Science.gov (United States)

    Sarkar, Jayanta; Raychaudhuri, A K

    2007-06-01

    Rare earth manganites having perovskite structure are susceptible to lattice strain. So far most investigations have been done with hydrostatic pressure or biaxial strain. We have observed that hole doped rare-earth manganites, which are known to display colossal magnetoresistance (CMR) also show change in its resistance under the influence of uniaxial strain. We report the direct measurement of piezoresistive response of La0.67Ca0.33MnO3 (LCMO) and La0.67Sr0.33MnO3 (LSMO) of this manganite family. The measurements were carried out on nanostructured polycrystalline films of LCMO and LSMO grown on oxidized Si(100) substrates. The piezoresistance was measured by bending the Si cantilevers (on which the film is grown) in flexural mode both with compressive and tensile strain. At room temperature the gauge factor approximately 10-20 and it increases to a large value near metal-insulator transition temperature (Tp) where the resistivity shows a peak.

  1. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Henriksen, Anders Dahl

    2014-01-01

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches....... The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover...

  2. Relation of Giant Thermo-EMF, Magnetothermo-EMF, Magnetoresistance, and Magnetization to Magnetic Impurity States in Manganites Nd(1- x)Sr x MnO3 and Sm(1- x)Sr x MnO3

    Science.gov (United States)

    Koroleva, L. I.; Batashev, I. K.; Morozov, A. S.; Balbashov, A. M.; Szymczak, H.; Slawska-Waniew, A.

    2018-02-01

    Thermo-EMF, magnetothermo-EMF, magnetoresistance, and magnetization of single-crystal samples of Nd(1- x)Sr x MnO3 and Sm(1- x)Sr x MnO3 with 0 ≤ x ≤ 0.3 have been studied experimentally. A sharp increase in the thermo-EMF and giant magnetothermo-EMF and magnetoresistance has been observed near the Curie point T C in compounds with 0.15 ≤ x ≤ 0.3. At the same time, no peculiarities have been found in compositions with x = 0. Since compounds with x > 0 consist of ferromagnetic clusters of the ferron type that reside in an antiferromagnetic A-type matrix, this means that the sharp increase in the thermo-EMF near T C is caused by ferrons. Indeed, the disappearance of ferrons due to a magnetic field or heating above T C leads to an abrupt decrease in the thermo-EMF. Therefore, thermo-EMF in alloyed magnetic semiconductors has been determined by the impurity concentration and the sample volume.

  3. Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well.

    Science.gov (United States)

    Olshanetsky, E B; Kvon, Z D; Gusev, G M; Mikhailov, N N; Dvoretsky, S A

    2016-09-01

    Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.

  4. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    International Nuclear Information System (INIS)

    Rizzi, Giovanni; Østerberg, Frederik W.; Henriksen, Anders D.; Dufva, Martin; Hansen, Mikkel F.

    2015-01-01

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface. The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover, we demonstrate that a single sensor bridge can be used to genotype a SNP. - Highlights: • We apply magnetoresistive sensors to study solid-surface hybridization kinetics of DNA. • We measure DNA melting profiles for perfectly matching DNA duplexes and for a single base mismatch. • We present a procedure to correct for temperature dependencies of the sensor output. • We reliably extract melting temperatures for the DNA hybrids. • We demonstrate direct measurement of differential binding signal for two probes on a single sensor

  5. Effect of pressure on the magnetoresistance of single crystal Nd0.5Sr0.36Pb0.14MnO3-δ

    International Nuclear Information System (INIS)

    Khazeni, K.; Jia, Y.X.; Lu, L.; Crespi, V.H.; Cohen, M.L.; Zettl, A.

    1996-01-01

    To investigate the observed huge variations in magnetoresistance between different samples of manganite perovskites we have performed the first high-pressure measurement of magnetoresistance in single crystal Nd 0.5 Sr 0.36 Pb 0.14 MnO 3-δ . Both resistivity and magnetoresistance are strongly suppressed upon application of pressure. The decrease in magnetoresistance with increasing pressure rules out substrate-induced compressive strain as a source of enhanced magnetoresistance. Instead, the magnetoresistance differences between samples are ascribed primarily to the more abrupt nature of the semiconductorlike to metallic phase transition at lower temperatures. copyright 1996 The American Physical Society

  6. Peculiar ferromagnetic insulator state in the low-hole-doped manganites

    International Nuclear Information System (INIS)

    Algarabel, P.A.; Teresa, J.M. de; Blasco, J.; Ibarra, M.R.; Kapusta, Cz.; Sikora, M.; Zajac, D.; Riedi, P.C.; Ritter, C.

    2003-01-01

    In this work we show the very different nature of the ferromagnetic state of the low-hole-doped manganites with respect to other manganites showing colossal magnetoresistance. High-field measurements definitively prove the coexistence of ferromagnetic-metallic and ferromagnetic-insulating regions even when the sample is magnetically saturated, with the ground state being inhomogeneous. We have investigated La 0.9 Ca 0.1 MnO 3 as a prototype compound. A wide characterization by means of magnetic and magnetotransport measurements, neutron diffraction, small-angle neutron scattering, and nuclear magnetic resonance has allowed us to establish that the ground state is based on the existence of disordered nanometric double-exchange metallic clusters that coexist with long-range superexchange-based ferromagnetic insulating regions. Under high magnetic field the system reaches magnetization saturation by aligning the magnetic clusters and the insulating matrix, but even if they grow in size, they do not reach the percolation limit

  7. Magnetic anisotropy and magnetoresistance in Co-based multilayers: a polarised neutron reflectivity study

    International Nuclear Information System (INIS)

    Yusuf, S.M.

    2000-01-01

    We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)

  8. Experimental and theoretical studies of manganite and magnetite compounds

    International Nuclear Information System (INIS)

    Srinitiwarawong, Chatchai

    2002-01-01

    In the recent years interest in the transition oxide compounds has renewed among researchers in the field of condensed matter physics. This thesis presents the studies of the two families of the transition oxides, the manganite and magnetite compounds. Manganite has regained the interest since the discovery of the large magnetoresistance around its Curie temperature in 1990s. Magnetite on the other hand is the oldest magnetic material known to man however some of its physical properties are still controversial. The experimental works address some basic properties of these compounds when fabricated in the form of thin films. These include the resistivity measurements and magnetic measurements as well as the Hall effect. The various models of transport mechanism have been compared. The magnetic field and the temperature dependence of magnetoresistance have also been studied. Simple devices such as an artificial grain boundary and bilayers thin film have been investigated. The second part of this thesis concentrates on the theoretical aspects of the fundamental physics behind these two compounds. The problem of electrons tunnelling between the magnetite electrodes has been addressed taking into account the surface effect with distortion. The last chapter presents a theoretical study of the spinless-Hubbard model which is the simplest approximation of the conduction electrons in magnetite and manganite. The results are obtained from the Hartree-Fock and the Hubbard-I approximations as well as the exact diagonalisation method. (author)

  9. Strain-induced metal-insulator phase coexistence in perovskite manganites.

    Science.gov (United States)

    Ahn, K H; Lookman, T; Bishop, A R

    2004-03-25

    The coexistence of distinct metallic and insulating electronic phases within the same sample of a perovskite manganite, such as La(1-x-y)Pr(y)Ca(x)MnO3, presents researchers with a tool for tuning the electronic properties in materials. In particular, colossal magnetoresistance in these materials--the dramatic reduction of resistivity in a magnetic field--is closely related to the observed texture owing to nanometre- and micrometre-scale inhomogeneities. Despite accumulated data from various high-resolution probes, a theoretical understanding for the existence of such inhomogeneities has been lacking. Mechanisms invoked so far, usually based on electronic mechanisms and chemical disorder, have been inadequate to describe the multiscale, multiphase coexistence within a unified picture. Moreover, lattice distortions and long-range strains are known to be important in the manganites. Here we show that the texturing can be due to the intrinsic complexity of a system with strong coupling between the electronic and elastic degrees of freedom. This leads to local energetically favourable configurations and provides a natural mechanism for the self-organized inhomogeneities over both nanometre and micrometre scales. The framework provides a physical understanding of various experimental results and a basis for engineering nanoscale patterns of metallic and insulating phases.

  10. Spin-coupled charge dynamics in layered manganite crystals

    CERN Document Server

    Tokura, Y; Ishikawa, T

    1998-01-01

    Anisotropic charge dynamics has been investigated for single crystals of layered manganites, La sub 2 sub - sub 2 sub x Sr sub 1 sub + sub 2 sub x Mn sub 2 O sub 7 (0.3<=X<=0.5). Remarkable variations in the magnetic structure and in the charge-transport properties are observed by changing the doping level x . A crystal with x = 0.3 behaves like a 2-dimensional ferromagnetic metal in the temperature region between approx 90 K and approx 270 K and shows an interplane tunneling magnetoresistance at lower temperatures which is sensitive to the interplane magnetic coupling between the adjacent MnO sub 2 bilayers. Optical probing of these layered manganites has also clarified the highly anisotropic and incoherent charge dynamics.

  11. Magnetic Field Sensors Based on Giant Magnetoresistance (GMR Technology: Applications in Electrical Current Sensing

    Directory of Open Access Journals (Sweden)

    Càndid Reig

    2009-10-01

    Full Text Available The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR, from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications.

  12. Charge Ordering, Competing Magnetic Interactions, and Magneto-Resistance Effects in Layered Iron(IV)-Based Oxides

    International Nuclear Information System (INIS)

    Adler, P.; Ghosh, S.

    2002-01-01

    Iron(IV)-based Ruddlesden-Popper-type oxides Sr 3 Fe 2-x Co x O 7-y (0≤x≤1) have been synthesized and studied by various techniques. It is shown that iron-57 Moessbauer spectroscopy is a powerful tool for elucidating the intimate correlations between chemical composition, electron-transport properties, electronic state, magnetism, and the large magneto-resistance effects in this system.

  13. New perovskite-based manganite Pb2Mn2O5

    International Nuclear Information System (INIS)

    Hadermann, Joke; Abakumov, Artem M.; Perkisas, Tyche; D'Hondt, Hans; Tan Haiyan; Verbeeck, Johan; Filonenko, Vladimir P.; Antipov, Evgeny V.; Van Tendeloo, Gustaaf

    2010-01-01

    A new perovskite based compound Pb 2 Mn 2 O 5 has been synthesized using a high pressure high temperature technique. The structure model of Pb 2 Mn 2 O 5 is proposed based on electron diffraction, high angle annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy. The compound crystallizes in an orthorhombic unit cell with parameters a=5.736(1) A∼√2a p , b=3.800(1) A∼a p , c=21.562(6) A∼4√2a p (a p -the parameter of the perovskite subcell) and space group Pnma. The Pb 2 Mn 2 O 5 structure consists of quasi two-dimensional perovskite blocks separated by 1/2[110] p (101) p crystallographic shear planes. The blocks are connected to each other by chains of edge-sharing MnO 5 distorted tetragonal pyramids. The chains of MnO 5 pyramids and the MnO 6 octahedra of the perovskite blocks delimit six-sided tunnels accommodating double chains of Pb atoms. The tunnels and pyramidal chains adopt two mirror-related configurations ('left' L and 'right' R) and layers consisting of chains and tunnels of the same configuration alternate in the structure according to an -L-R-L-R-sequence. The sequence is sometimes locally violated by the appearance of -L-L- or -R-R-fragments. A scheme is proposed with a Jahn-Teller distortion of the MnO 6 octahedra with two long and two short bonds lying in the a-c plane, along two perpendicular orientations within this plane, forming a d-type pattern. - Graphical abstract: Order of the Jahn-Teller distorted MnO 6 octahedra in Pb 2 Mn 2 O 5 . Two long and two short bonds lie in the a-c plane, along two perpendicular orientations within this plane, forming a d-type pattern.

  14. Ultrahigh Tunneling-Magnetoresistance Ratios in Nitride-Based Perpendicular Magnetic Tunnel Junctions from First Principles

    Science.gov (United States)

    Yang, Baishun; Tao, Lingling; Jiang, Leina; Chen, Weizhao; Tang, Ping; Yan, Yu; Han, Xiufeng

    2018-05-01

    We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M4N (M =Fe , Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk Fe4 N reveals a half-metal nature in terms of the Δ1 state. A perpendicular magnetic anisotropy is observed in the periodic system Fe4 N /MgO . In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the Fe4 N /MgO /Fe4N MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk Fe4 N as well as the transmission in momentum space of Fe4 N /MgO /Fe4N . Our results suggest that the Fe4 N /MgO /Fe4N MTJ is a benefit for spintronic applications.

  15. Open-loop magneto-resistance sensor-based DC current transformer for FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Soliman, Eman; Hofmann, Klaus [Technical University Darmstadt (Germany); Reeg, Hansjoerg; Schwickert, Marcus [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

    2016-07-01

    A Novel DC Current Transformer (N-DCCT) is currently under development for FAIR. The N-DCCT is going to be installed inside the SIS100 synchrotron. The proposed system is no longer based on magnetic modulation principle of the conventional DCCT. Instead, a Magneto-resistance sensor is utilized to detect the magnetic field of the ion-beam. For a first prototype the N-DCCT is realized as an open-loop system. It consists of a high permeability slotted ring core and up to two MR sensors. The maximum ion-beam current magnetic field is concentrated inside the ring core air gaps. MR sensors are placed inside the core air gaps. The sensor output voltage is directly proportional to the ion-beam current. The system is implemented using commercial Tunneling MR sensors. Measurements using one single sensor, as well as the application of two sensors are presented in this work. The sensitivity of the proposed N-DCCT is 0.566 [V/A] for one single MR sensor and 1.56 [V/A] when two sensors are implemented.

  16. A current sensor based on the giant magnetoresistance effect: design and potential smart grid applications.

    Science.gov (United States)

    Ouyang, Yong; He, Jinliang; Hu, Jun; Wang, Shan X

    2012-11-09

    Advanced sensing and measurement techniques are key technologies to realize a smart grid. The giant magnetoresistance (GMR) effect has revolutionized the fields of data storage and magnetic measurement. In this work, a design of a GMR current sensor based on a commercial analog GMR chip for applications in a smart grid is presented and discussed. Static, dynamic and thermal properties of the sensor were characterized. The characterizations showed that in the operation range from 0 to ±5 A, the sensor had a sensitivity of 28 mV·A(-1), linearity of 99.97%, maximum deviation of 2.717%, frequency response of −1.5 dB at 10 kHz current measurement, and maximum change of the amplitude response of 0.0335%·°C(-1) with thermal compensation. In the distributed real-time measurement and monitoring of a smart grid system, the GMR current sensor shows excellent performance and is cost effective, making it suitable for applications such as steady-state and transient-state monitoring. With the advantages of having a high sensitivity, high linearity, small volume, low cost, and simple structure, the GMR current sensor is promising for the measurement and monitoring of smart grids.

  17. Giant Magnetoresistance-based Biosensor for Detection of Influenza A Virus.

    Science.gov (United States)

    Krishna, Venkatramana D; Wu, Kai; Perez, Andres M; Wang, Jian-Ping

    2016-01-01

    We have developed a simple and sensitive method for the detection of influenza A virus based on giant magnetoresistance (GMR) biosensor. This assay employs monoclonal antibodies to viral nucleoprotein (NP) in combination with magnetic nanoparticles (MNPs). Presence of influenza virus allows the binding of MNPs to the GMR sensor and the binding is proportional to the concentration of virus. Binding of MNPs onto the GMR sensor causes change in the resistance of sensor, which is measured in a real time electrical readout. GMR biosensor detected as low as 1.5 × 10(2) TCID50/mL virus and the signal intensity increased with increasing concentration of virus up to 1.0 × 10(5) TCID50/mL. This study showed that the GMR biosensor assay is relevant for diagnostic application since the virus concentration in nasal samples of influenza virus infected swine was reported to be in the range of 10(3) to 10(5) TCID50/mL.

  18. Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

    Science.gov (United States)

    Ward, T Z; Gai, Z; Xu, X Y; Guo, H W; Yin, L F; Shen, J

    2011-04-15

    In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

  19. Cold-Rolled Strip Steel Stress Detection Technology Based on a Magnetoresistance Sensor and the Magnetoelastic Effect.

    Science.gov (United States)

    Guan, Ben; Zang, Yong; Han, Xiaohui; Zheng, Kailun

    2018-05-21

    Driven by the demands for contactless stress detection, technologies are being used for shape control when producing cold-rolled strips. This paper presents a novel contactless stress detection technology based on a magnetoresistance sensor and the magnetoelastic effect, enabling the detection of internal stress in manufactured cold-rolled strips. An experimental device was designed and produced. Characteristics of this detection technology were investigated through experiments assisted by theoretical analysis. Theoretically, a linear correlation exists between the internal stress of strip steel and the voltage output of a magneto-resistive sensor. Therefore, for this stress detection system, the sensitivity of the stress detection was adjusted by adjusting the supply voltage of the magnetoresistance sensor, detection distance, and other relevant parameters. The stress detection experimental results showed that this detection system has good repeatability and linearity. The detection error was controlled within 1.5%. Moreover, the intrinsic factors of the detected strip steel, including thickness, carbon percentage, and crystal orientation, also affected the sensitivity of the detection system. The detection technology proposed in this research enables online contactless detection and meets the requirements for cold-rolled steel strips.

  20. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  1. Pressure effect on magnetic and magnetotransport properties of intermetallic and colossal magnetoresistance oxide compounds

    International Nuclear Information System (INIS)

    Arnold, Z; Ibarra, M R; Algarabel, P A; Marquina, C; Teresa, Jose MarIa de; Morellon, L; Blasco, J; Magen, C; Prokhnenko, O; Kamarad, J; Ritter, C

    2005-01-01

    The joint power of neutron diffraction and pressure techniques allows us to characterize under unique conditions the nature and different role of basic interactions in solids. We have covered a broad phenomenology in archetypical compounds: intermetallics and magnetic oxides. We have selected compounds in which the effect of moderate pressure is able to modify the electronic structure and bond angles that in turn are in the bases of magnetic and structural transitions. Complex magnetic and structural phase diagrams are reported for compounds with magnetic (Tb 1-X Y X Mn 2 ) and structural (RE 5 Si 4-X Ge X ) instabilities. Pressure-induced change of the magnetic structure in (R 2 Fe 17 ) intermetallics and the effect on the colossal magnetoresistance manganites are described

  2. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jilili, Jiwuer

    2016-07-13

    Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

  3. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  4. Microstructure, interparticle interactions and magnetotransport of manganite-polyaniline nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Romero, Mariano; Faccio, Ricardo; Pardo, Helena [Centro NanoMat/Cryssmat Lab, DETEMA, Facultad de Química, Universidad de la República (Uruguay); Centro Interdisciplinario de Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República (Uruguay); Tumelero, Milton A. [Laboratorio de filmes finos e superficies, Departamento de Física, Universidad Federal de Santa Catarina, Florianópolis (Brazil); Campos Plá Cid, Cristiani [Laboratorio Central de Microscopia Electronica, Universidad Federal de Santa Catarina, Florianópolis (Brazil); Pasa, André A. [Laboratorio de filmes finos e superficies, Departamento de Física, Universidad Federal de Santa Catarina, Florianópolis (Brazil); Laboratorio Central de Microscopia Electronica, Universidad Federal de Santa Catarina, Florianópolis (Brazil); Mombrú, Álvaro W., E-mail: amombru@fq.edu.uy [Centro NanoMat/Cryssmat Lab, DETEMA, Facultad de Química, Universidad de la República (Uruguay); Centro Interdisciplinario de Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República (Uruguay)

    2016-03-01

    In this report, we present the study on the microstructure and interparticle interactions of manganite-polyaniline nanocomposites using grazing incidence small angle X-ray scattering (SAXS). In order to determine the nanoparticles mean diameter and correlation distances, data analysis was performed using the Guinier and Beaucage fits, in good agreement with transmission electron microscopy and X-ray diffraction analysis. The analysis of the interference functions revealed the existence of attractive interactions between nanoparticles. The nanocomposites with higher manganite concentration showed best fitting using the sticky hard sphere approximation. A weakening in the attractive interaction with increasing the dilution of nanoparticles in the polymer matrix was observed until a critical volume fraction (ϕ{sub c} ∼ 0.4) is reached, upon which the hard sphere approximation showed best fitting. The interaction potentials were estimated at room temperature revealing a decrease in the depth and width of the square well with increasing nanoparticle dilution. Coercive field and remanent magnetization showed a decrease with increasing polymer addition suggesting the declining of dipole–dipole interactions, in agreement with SAXS analysis. Magnetoresistance also showed an enhancement that could be probably associated to the decrease in the dipole–dipole interactions between ferromagnetic La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO) nanoparticles at a critical separation distance in these nanocomposites. - Highlights: • A SAXS study on the microstructure of manganite-polyaniline nanocomposites is reported. • We report the presence of attractive interactions for the composites with higher concentration in manganite. • Interparticle dipole–dipole interactions were estimated by means of the SAXS interference function. • Coercive field and remanent magnetization studies showed agreement with SAXS analysis. • Magnetotransport showed an enhancement in relation to

  5. Theory of strain-controlled magnetotransport and stabilization of the ferromagnetic insulating phase in manganite thin films.

    Science.gov (United States)

    Mukherjee, Anamitra; Cole, William S; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-12

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  6. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.

    2011-03-28

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  7. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.; Giouroudi, Ioanna; Liang, Cai; Kosel, Jü rgen

    2011-01-01

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  8. Study of dependence upon the magnetic field and transport current of the magnetoresistive effect in YBCO-based bulk composites

    International Nuclear Information System (INIS)

    Balaev, D A; Prus, A G; Shaykhutdinov, K A; Gokhfeld, D M; Petrov, M I

    2007-01-01

    The magnetoresistive properties of bulk YBCO + CuO and YBCO+BaPb 0.75 Sn 0.25 O 3 composites for different orientations of external magnetic field H and macroscopic transport current j have been measured. These composites exhibit large magnetoresistance in weak magnetic fields ( 2 θ. This fact suggests that the flux flow in the intergrain boundaries is responsible for the large magnetoresistive effect observed in the composites

  9. Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

    Science.gov (United States)

    Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

    2018-03-19

    Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

  10. Electrical Transport and Magnetoresistance Properties of Tensile-Strained CaMnO3 Thin Films

    Science.gov (United States)

    Ullery, Dustin; Lawson, Bridget; Zimmerman, William; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Yong, Grace; Smolyaninova, Vera; Kolagani, Rajeswari

    We will present our studies of the electrical transport and magnetoresistance properties of tensile strained CaMnO3 thin films. We observe that the resistivity decreases significantly as the film thickness decreases which is opposite to what is observed in thin films of hole doped manganites. The decrease in resistivity is more pronounced in the films on (100) SrTiO3, with resistivity of the thinnest films being about 3 orders of magnitude lower than that of bulk CaMnO3. Structural changes accompanying resistivity changes cannot be fully explained as due to tensile strain, and indicate the presence of oxygen vacancies. These results also suggest a coupling between tensile strain and oxygen deficiency, consistent with predictions from models based on density functional theory calculations. We observe a change in resistance under the application of moderate magnetic field. Experiments are underway to understand the origin of the magnetoresistance and its possible relation to the tensile strain effects. We acknowledge support from: Towson Office of University Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grants from the Fisher College of Science and Mathematics, and Seed Funding Grant from the School of Emerging technologies.

  11. Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

    Directory of Open Access Journals (Sweden)

    Y.O. Uhryn

    2017-12-01

    Full Text Available Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

  12. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  13. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng; Lin, Zhipeng; Wu, Jianchun; Dong, Zhili; Wu, Tao

    2014-01-01

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  14. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng

    2014-09-16

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  15. Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

    Science.gov (United States)

    Zare, Moslem; Majidi, Leyla; Asgari, Reza

    2017-03-01

    We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with n -doped F and p -doped N regions and also a finite conductance in the AP configuration with the N region of n -type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

  16. Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure.

    Science.gov (United States)

    Huang, Shun-Yu; Li, Hong-Lin; Chong, Cheong-Wei; Chang, Yu-Ying; Lee, Min-Kai; Huang, Jung-Chun-Andrew

    2018-01-08

    In this study, we integrated bilayer structure of covered Pt on nickel zinc ferrite (NZFO) and CoFe/Pt/NZFO tri-layer structure by pulsed laser deposition system for a spin Hall magnetoresistance (SMR) study. In the bilayer structure, the angular-dependent magnetoresistance (MR) results indicate that Pt/NZFO has a well-defined SMR behavior. Moreover, the spin Hall angle and the spin diffusion length, which were 0.0648 and 1.31 nm, respectively, can be fitted by changing the Pt thickness in the longitudinal SMR function. Particularly, the MR ratio of the bilayer structure (Pt/NZFO) has the highest changing ratio (about 0.135%), compared to the prototype structure Pt/Y 3 Fe 5 O 12 (YIG) because the NZFO has higher magnetization. Meanwhile, the tri-layer samples (CoFe/Pt/NZFO) indicate that the MR behavior is related with CoFe thickness as revealed in angular-dependent MR measurement. Additionally, comparison between the tri-layer structure with Pt/NZFO and CoFe/Pt bilayer systems suggests that the SMR ratio can be enhanced by more than 70%, indicating that additional spin current should be injected into Pt layer.

  17. Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film

    KAUST Repository

    Lai, K.; Nakamura, M.; Kundhikanjana, W.; Kawasaki, M.; Tokura, Y.; Kelly, M. A.; Shen, Z.-X.

    2010-01-01

    Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. By using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd 1/2Sr1/2MnO3 thin films with a large period of 100 nanometers. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

  18. Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film

    KAUST Repository

    Lai, K.

    2010-07-08

    Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. By using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd 1/2Sr1/2MnO3 thin films with a large period of 100 nanometers. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

  19. Mesoscopic percolating resistance network in a strained manganite thin film.

    Science.gov (United States)

    Lai, Keji; Nakamura, Masao; Kundhikanjana, Worasom; Kawasaki, Masashi; Tokura, Yoshinori; Kelly, Michael A; Shen, Zhi-Xun

    2010-07-09

    Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. By using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd(1/2)Sr(1/2)MnO3 thin films with a large period of 100 nanometers. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

  20. Effect of uniaxial strain on the tunnel magnetoresistance of T-shaped graphene nanoribbon based spin-valve

    Science.gov (United States)

    Fouladi, A. Ahmadi

    2016-07-01

    We theoretically investigated the spin-dependent transport through a T-shaped graphene nanoribbon (TsGNR) based spin-valve consisting of armchair graphene sandwiched between two semi-infinite ferromagnetic armchair graphene nanoribbon leads in the presence of an applied uniaxial strain. Based on a tight-binding model and standard nonequilibrium Green's function technique, it is demonstrated that the tunnel magnetoresistance (TMR) for the system can be increased about 98% by tuning the uniaxial strain. Our results show that the absolute values of TMR around the zero bias voltage for compressive strain are larger than tensile strain. In addition, the TMR of the system can be nicely controlled by GNR width.

  1. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  2. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  3. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films

    International Nuclear Information System (INIS)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B; Steren, L B; Vega, D

    2010-01-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La 0.75 Sr 0.25 MnO 3 films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  4. Manganite perovskite ceramics, their precursors and methods for forming

    Science.gov (United States)

    Payne, David Alan; Clothier, Brent Allen

    2015-03-10

    Disclosed are a variety of ceramics having the formula Ln.sub.1-xM.sub.xMnO.sub.3, where 0.Itoreq.x.Itoreq.1 and where Ln is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M is Ca, Sr, Ba, Cd, or Pb; manganite precursors for preparing the ceramics; a method for preparing the precursors; and a method for transforming the precursors into uniform, defect-free ceramics having magnetoresistance properties. The manganite precursors contain a sol and are derived from the metal alkoxides: Ln(OR).sub.3, M(OR).sub.2 and Mn(OR).sub.2, where R is C.sub.2 to C.sub.6 alkyl or C.sub.3 to C.sub.9 alkoxyalkyl, or C.sub.6 to C.sub.9 aryl. The preferred ceramics are films prepared by a spin coating method and are particularly suited for incorporation into a device such as an integrated circuit device.

  5. Magnetic detection of mercuric ion using giant magnetoresistance-based biosensing system.

    Science.gov (United States)

    Wang, Wei; Wang, Yi; Tu, Liang; Klein, Todd; Feng, Yinglong; Li, Qin; Wang, Jian-Ping

    2014-04-15

    We have demonstrated a novel sensing strategy employing a giant magnetoresistance (GMR) biosensor and DNA chemistry for the detection of mercuric ion (Hg(2+)). This assay takes advantages of high sensitivity and real-time signal readout of GMR biosensor and high selectivity of thymine-thymine (T-T) pair for Hg(2+). The assay has a detection limit of 10 nM in both buffer and natural water, which is the maximum mercury level in drinking water regulated by U.S. Environmental Protection Agency (EPA). The magnitude of the dynamic range for Hg(2+) detection is up to three orders (10 nM to 10 μM). Herein, GMR sensing technology is first introduced into a pollutant monitoring area. It can be foreseen that the GMR biosensor could become a robust contender in the areas of environmental monitoring and food safety testing.

  6. Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

    Science.gov (United States)

    Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

    2017-07-01

    Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

  7. Structure and giant magnetoresistance of carbon-based amorphous films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ma, L.; He, M.F.; Liu, Z.W.; Zeng, D.C.; Gu, Z.F.; Cheng, G.

    2014-01-01

    Pure amorphous carbon (a-C) and Co-doped Co x C 1−x films were prepared on n-Si(100) substrates by dc magnetron sputtering. In Co–C films, the nano-sized amorphous Co particles were homogeneously dispersed in the amorphous cross-linked carbon matrix. The structures of a-C and Co x C 1−x films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The results showed that the a-C films were diamond-like carbon (DLC) films. After doping cobalt into DLC film, the sp 3 -hybridized carbon content in DLC composite films almost had no change. The as-deposited Co x C 1−x granular films had larger value of magnetoresistance (MR) than the amorphous carbon film. A very high positive MR, up to 15.5% at magnetic field B = 0.8 T and x = 2.5 at.% was observed in a Co x C 1−x granular film with thickness of 80 nm at room temperature when the external magnetic field was perpendicular to the electric current and the film surface. With increase of the film thickness and Co-doped content, the MR decreased gradually. It remains a challenge to well explain the observed MR effect in the Co x C 1−x granular films. - Highlights: • The amorphous carbon films were diamond-like carbon films. • No carbide appearing, the Co–C composite films form a good metal/insulator system. • A high positive magnetoresistance, up to 15.5% at B = 0.8 T was observed in Co–C films

  8. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  9. Local probe studies on lattice distortions and electronic correlations in manganites

    CERN Document Server

    lopes, Armandina; Correia, João Guilherme

    This thesis presents an experimental study on lattice distortions and electronic correlations in colossal magnetoresistive magnetic oxides. The Perturbed Angular Correlation local probe technique is used to study selected manganite systems in order to obtain relevant insight into microscopic phenomena responsible for their macroscopic pr operties. Complementary structural, magnetic and electric characterization was performed. The work is focused on the following aspects: \\\\Lattice distortions and polaron clusters in LaMnO$_{3+ \\Delta}$ system. A study of the electric field gradi ent and magnetic hyperfine field was performed in representative samples of the LaMnO$_{3+ \\Delta}$ system, and correlated with macroscopic information obtained in the same samples. Particular attention was given to the LaMnO$_{3.12}$ sample since this compound is a prototype of a ferromagnetic-insulat or manganite, presenting a rhombohedric- orthorhombic structural phase transition near room temperature. We found that random distribu...

  10. Rectifying characteristics and magnetoresistance in La0.9Sr0.1MnO3/Nb-doped SrTiO3 heterojunctions

    International Nuclear Information System (INIS)

    Luo, Z.; Gao, J.

    2007-01-01

    Manganite-based heterojunctions have attracted lots of attention as one of the most promising practical applications of colossal magnetoresistance materials. In this work, heterojunctions were fabricated by depositing La 0.9 Sr 0.1 MnO 3 (LSMO) films on substrates of 0.7 wt.% Nb-doped SrTiO 3 using pulsed laser deposition technique. X-ray diffraction spectra confirmed that the grown films are of single phase and have an orientation with the c-axis perpendicular to the substrate surface. As temperature decreases, the resistivity of LSMO films first increases gradually and then increases abruptly at temperature lower than 150 K. These junctions showed clear rectifying characteristics and strong temperature dependent current-voltage relation. Diffusion voltage decreases as temperature increases. Under forward bias, current is proportion to exp(eV/nkT). Ideal factor increases quickly and tunneling current plays more and more important role as temperature decreases. At 50 K, tunneling current becomes nearly dominant. Large magnetoresistance was observed. The sign and value of such magnetoresistance depends on the direction and value of current

  11. Gadolinium- and manganite-based contrast agents with fluorescent probes for both magnetic resonance and fluorescence imaging of pancreatic islets: a comparative study

    Czech Academy of Sciences Publication Activity Database

    Berková, Z.; Jirák, D.; Zacharovová, K.; Lukeš, I.; Kotková, Z.; Kotek, J.; Kačenka, M.; Kaman, Ondřej; Řehoř, I.; Hájek, M.; Saudek, F.

    2013-01-01

    Roč. 8, č. 4 (2013), s. 614-621 ISSN 1860-7179 Institutional support: RVO:68378271 Keywords : contrast agents * gadolinium * magnetic resonance imaging * manganite * pancreatic islet s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.046, year: 2013

  12. Magnetoresistance and phase composition of La-Sn-Mn-O systems

    DEFF Research Database (Denmark)

    Li, Z.W.; Morrish, A.H.; Jiang, Jianzhong

    1999-01-01

    The transport properties of the manganites La1 - xSnxMnO3 + delta with x = 0.1-0.5 and of Fe-doped samples have been comprehensively studied using magnetoresistance measurements, Fe-57 and Sn-119 Mossbauer spectroscopy, and x-ray diffraction. At the Sn concentration x = 0.5, La0.5Sn0.5MnO3 + delta...

  13. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  14. A tight binding model study of tunneling conductance spectra of spin and orbitally ordered CMR manganites

    Science.gov (United States)

    Panda, Saswati; Sahoo, D. D.; Rout, G. C.

    2018-04-01

    We report here a tight binding model for colossal magnetoresistive (CMR) manganites to study the pseudo gap (PG) behavior near Fermi level. In the Kubo-Ohata type DE model, we consider first and second nearest neighbor interactions for transverse spin fluctuations in core band and hopping integrals in conduction band, in the presence of static band Jahn-Teller distortion. The model Hamiltonian is solved using Zubarev's Green's function technique. The electron density of states (DOS) is found out from the Green's functions. We observe clear PG near Fermi level in the electron DOS.

  15. Passive wireless strain measurement based upon the Villari effect and giant magnetoresistance

    Science.gov (United States)

    Windl, Roman; Bruckner, Florian; Abert, Claas; Huber, Christian; Vogler, Christoph; Huber, Thomas; Oezelt, Harald; Suess, Dieter

    2016-12-01

    A passive wireless radio frequency-identification (RFID) stress/strain sensor is presented. Stress is transformed into a change of magnetic field by utilizing an amorphous metal ribbon. This magnetic field change is measured by a giant magnetoresistance magnetic field sensor and converted into a digital value with a RFID chip for wireless access. Standard metal foil strain gauges have a gauge factor GF from around 2 to 5 and suffer from the disadvantage of a physically connected power supply and measurement equipment. For the presented sensor, a strain range of -10 μm/m to 190 μm/m results in a linear sensor response, a gauge factor of GF ≈ 245, and a detectivity of 4.10 nm/m 1/√{Hz } . The detectivity of the presented sensor is similar to the detectivity of a reference metal foil strain gauge. Due to low power consumption and easy signal analysis, this sensor is well suited for long term strain measurement inside closed spaces. RFID adds features like multiple tag detection, wireless passive operation and a user data storage.

  16. Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

    International Nuclear Information System (INIS)

    Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

    2000-01-01

    Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

  17. Design of Tunnel Magnetoresistive-Based Circular MFL Sensor Array for the Detection of Flaws in Steel Wire Rope

    Directory of Open Access Journals (Sweden)

    Liu Xiucheng

    2016-01-01

    Full Text Available Tunnel magnetoresistive (TMR devices have superior performances in weak magnetic field detection. In this study, TMR devices were first employed to form a circular magnetic flux leakage (MFL sensor for slight wire rope flaw detection. Two versions of this tailor-made circular TMR-based sensor array were presented for the inspection of wire ropes with the diameters of 14 mm and 40 mm, respectively. Helmholtz-like coils or a ferrite magnet-based magnetizer was selected to provide the proper magnetic field, in order to meet the technical requirements of the TMR devices. The coefficient of variance in the flaw detection performance of the sensor array elements was experimentally estimated at 4.05%. Both versions of the MFL sensor array were able to detect multiple single-broken wire flaws in the wire ropes. The accurate axial and circumferential positions of these broken wire flaws were estimated from the MFL scanning image results. In addition, the proposed TMR-based sensor array was applied to detect the MFL signal induced by slight surface wear defects. A mutual correlation analysis method was used to distinguish the signals caused by the lift-off fluctuation from the MFL scanning image results. The MFL sensor arrays presented in this study provide inspiration for the designing of tailor-made TMR-based circular sensor arrays for cylindrical ferromagnetic structural inspections.

  18. A High-Spin Rate Measurement Method for Projectiles Using a Magnetoresistive Sensor Based on Time-Frequency Domain Analysis.

    Science.gov (United States)

    Shang, Jianyu; Deng, Zhihong; Fu, Mengyin; Wang, Shunting

    2016-06-16

    Traditional artillery guidance can significantly improve the attack accuracy and overall combat efficiency of projectiles, which makes it more adaptable to the information warfare of the future. Obviously, the accurate measurement of artillery spin rate, which has long been regarded as a daunting task, is the basis of precise guidance and control. Magnetoresistive (MR) sensors can be applied to spin rate measurement, especially in the high-spin and high-g projectile launch environment. In this paper, based on the theory of a MR sensor measuring spin rate, the mathematical relationship model between the frequency of MR sensor output and projectile spin rate was established through a fundamental derivation. By analyzing the characteristics of MR sensor output whose frequency varies with time, this paper proposed the Chirp z-Transform (CZT) time-frequency (TF) domain analysis method based on the rolling window of a Blackman window function (BCZT) which can accurately extract the projectile spin rate. To put it into practice, BCZT was applied to measure the spin rate of 155 mm artillery projectile. After extracting the spin rate, the impact that launch rotational angular velocity and aspect angle have on the extraction accuracy of the spin rate was analyzed. Simulation results show that the BCZT TF domain analysis method can effectively and accurately measure the projectile spin rate, especially in a high-spin and high-g projectile launch environment.

  19. Isotropic Kink and Quasiparticle Excitations in the Three-Dimensional Perovskite Manganite La_{0.6}Sr_{0.4}MnO_{3}.

    Science.gov (United States)

    Horiba, Koji; Kitamura, Miho; Yoshimatsu, Kohei; Minohara, Makoto; Sakai, Enju; Kobayashi, Masaki; Fujimori, Atsushi; Kumigashira, Hiroshi

    2016-02-19

    In order to reveal the many-body interactions in three-dimensional perovskite manganites that show colossal magnetoresistance, we performed an in situ angle-resolved photoemission spectroscopy on La_{0.6}Sr_{0.4}MnO_{3} and investigated the behavior of quasiparticles. We observed quasiparticle peaks near the Fermi momentum in both the electron and the hole bands, and clear kinks throughout the entire hole Fermi surface in the band dispersion. This isotropic behavior of quasiparticles and kinks suggests that polaronic quasiparticles produced by the coupling of electrons with Jahn-Teller phonons play an important role in the colossal magnetoresistance properties of the ferromagnetic metallic phase of three-dimensional manganites.

  20. A Miniaturized Force Sensor Based on Hair-Like Flexible Magnetized Cylinders Deposited Over a Giant Magnetoresistive Sensor

    KAUST Repository

    Ribeiro, Pedro

    2017-06-13

    The detection of force with higher resolution than observed in humans (similar to 1 mN) is of great interest for emerging technologies, especially surgical robots, since this level of resolution could allow these devices to operate in extremely sensitive environments without harming these. In this paper, we present a force sensor fabricated with a miniaturized footprint (9 mm(2)), based on the detection of the magnetic field generated by magnetized flexible pillars over a giant magnetoresistive sensor. When these flexible pillars deflect due to external loads, the stray field emitted by these will change, thus varying the GMR sensor resistance. A sensor with an array of five pillars with 200 mu m diameter and 1 mm height was fabricated, achieving a 0 to 26 mN measurement range and capable of detecting a minimum force feature of 630 mu N. A simulation model to predict the distribution of magnetic field generated by the flexible pillars on the sensitive area of the GMR sensor in function of the applied force was developed and validated against the experimental results reported in this paper. The sensor was finally tested as a texture classification system, with the ability of differentiating between four distinct surfaces varying between 0 and 162 mu m root mean square surface roughness.

  1. A Miniaturized Force Sensor Based on Hair-Like Flexible Magnetized Cylinders Deposited Over a Giant Magnetoresistive Sensor

    KAUST Repository

    Ribeiro, Pedro; Khan, Mohammed Asadullah; Alfadhel, Ahmed; Kosel, Jü rgen; Franco, Fernando; Cardoso, Susana; Bernardino, Alexandre; Santos-Victor, Jose; Jamone, Lorenzo

    2017-01-01

    The detection of force with higher resolution than observed in humans (similar to 1 mN) is of great interest for emerging technologies, especially surgical robots, since this level of resolution could allow these devices to operate in extremely sensitive environments without harming these. In this paper, we present a force sensor fabricated with a miniaturized footprint (9 mm(2)), based on the detection of the magnetic field generated by magnetized flexible pillars over a giant magnetoresistive sensor. When these flexible pillars deflect due to external loads, the stray field emitted by these will change, thus varying the GMR sensor resistance. A sensor with an array of five pillars with 200 mu m diameter and 1 mm height was fabricated, achieving a 0 to 26 mN measurement range and capable of detecting a minimum force feature of 630 mu N. A simulation model to predict the distribution of magnetic field generated by the flexible pillars on the sensitive area of the GMR sensor in function of the applied force was developed and validated against the experimental results reported in this paper. The sensor was finally tested as a texture classification system, with the ability of differentiating between four distinct surfaces varying between 0 and 162 mu m root mean square surface roughness.

  2. Percolative nature of A-site disordered La0.75Ca0.25-xSrxMnO3 manganites

    DEFF Research Database (Denmark)

    Venkatesh, R.; Yadam, Sankararao; Venkateshwarlu, D.

    2015-01-01

    Magnetic, resistive, and magnetoresistance measurements were used to investigate the percolative nature of A-site disordered La0.75Ca0.25-xSrxMnO3(x = 0, 0.10) manganites. La0.75Ca0.15Sr0.10MnO3 has an orthorhombic structure and second order magnetic phase transition indicates the presence of two...

  3. Big magnetoresistance: magnetic polarons

    International Nuclear Information System (INIS)

    Teresa, J.M. de; Ibarra, M.R.

    1997-01-01

    By using several macro and microscopic experimental techniques we have given evidence for magnetoresistance in manganese oxides caused by the effect of the magnetic field on the magnetic polarons. (Author) 3 refs

  4. Magnetoresistive waves in plasmas

    International Nuclear Information System (INIS)

    Felber, F.S.; Hunter, R.O. Jr.; Pereira, N.R.; Tajima, T.

    1982-01-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed

  5. Resonant x-ray scattering in manganites: study of the orbital degree of freedom

    International Nuclear Information System (INIS)

    Ishihara, Sumio; Maekawa, Sadamichi

    2002-01-01

    The orbital degree of freedom of electrons and its interplay with spin, charge and lattice degrees of freedom are some of the central issues in colossal magnetoresistive manganites. The orbital degree of freedom has until recently remained hidden, since it does not couple directly to most experimental probes. Development of synchrotron light sources has changed the situation; by the resonant x-ray scattering (RXS) technique the orbital ordering has successfully been observed. In this article, we review progress in the recent studies of RXS in manganites. We start with a detailed review of the RXS experiments applied to the orbital-ordered manganites and other correlated electron systems. We derive the scattering cross section of RXS, where the tensor character of the atomic scattering factor (ASF) with respect to the x-ray polarization is stressed. Microscopic mechanisms of the anisotropic tensor character of the ASF are introduced and numerical results of the ASF and the scattering intensity are presented. The azimuthal angle scan is a unique experimental method to identify RXS from the orbital degree of freedom. A theory of the azimuthal angle and polarization dependence of the RXS intensity is presented. The theoretical results show good agreement with the experiments in manganites. Apart from the microscopic description of the ASF, a theoretical framework of RXS to relate directly to the 3d orbital is presented. The scattering cross section is represented by the correlation function of the pseudo-spin operator for the orbital degree of freedom. A theory is extended to the resonant inelastic x-ray scattering and methods to observe excitations of the orbital degree of freedom are proposed. (author)

  6. Control of the colossal magnetoresistance by strain effect in Nd.sub.0.5./sub.Ca.sub.0.5./sub.MnO.sub.3./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Buzin, R. E.; Prellier, W.; Simon, Ch.; Mercone, S.; Mercey, B.; Raveau, B.; Šebek, Josef; Hejtmánek, Jiří

    2001-01-01

    Roč. 79, č. 5 (2001), s. 647-649 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z1010914 Keywords : manganite thin films * colossal magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.849, year: 2001

  7. Characteristic features of the magnetoresistance in the ferrimagnetic (Sr2FeMoO6-δ) - dielectric (SrMoO4) nanocomposite

    Science.gov (United States)

    Demyanov, S.; Kalanda, N.; Yarmolich, M.; Petrov, A.; Lee, S.-H.; Yu, S.-C.; Oh, S. K.; Kim, D.-H.

    2018-05-01

    Magnetic metal-oxide compounds with high values of magnetoresistance (MR) have attracted huge interest for spintronic applications, among which Sr2FeMoO6-δ (SFMO) has been relatively less known compared to the cobaltites and manganites, despite 100% electrons spin-polarization degree and a high Curie temperature. Here, stable fabrication and systematic analysis of nanocomposites based on SFMO with SrMoO4 dielectric sheaths are presented. SFMO-SrMoO4 nanocomposites were fabricated as follows: synthesis of the SFMO single-phase nanopowders by the modified citrate-gel technique; compaction under high pressure; thermal treatment for sheaths formation around grains. The nanocomposite is observed to exhibit a transitional behavior of conductivity from metallic, which is characteristic for the SFMO to semiconductor one in the temperature range 4 - 300K under magnetic fields up to 10T. A negative MR is observed due to the spin-polarized charge carriers tunneling through dielectric sheaths. MR value reaches 43% under 8T at 10κ. The dielectric sheaths thickness was determined to be about 10 nm by electric breakdown voltage value at current-voltage characteristics curves. The breakdown is found to be a reversible process determined by collisional ionization of dielectric atoms in strong electric field depending on knocked-out electrons from the SrMoO4. It was found that MR changes sign in electric breakdown region, revealing the giant magnetoresistive properties.

  8. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  9. Giant magnetoresistance of hysteresis-free Cu/Co-based multilayers

    International Nuclear Information System (INIS)

    Huetten, A.; Hempel, T.; Schepper, W.; Kleineberg, U.; Reiss, G.

    2001-01-01

    It has been demonstrated that hysteresis-free multilayers based on {Cu/Co} and {Cu/Ni 57 Co 43 } can be experimentally realized obtaining room temperature GMR effect amplitudes from 6.5% up to 20%. A critical window for the layer thickness for hysteresis-free GMR curves can be achieved for both systems, ranging from 0.38 to 0.45 nm and 0.59 to 0.7 nm, respectively. The corresponding sensitivities range from 0.075 up to 0.114%/Oe, but are still below that of normal {Cu/Co} multilayers. Hysteresis-free multilayers based on these systems are stable up to 180 deg. C upon isochronal annealing. It is shown that hysteresis-free {Cu/Co or Ni 57 Co 43 }-multilayers are neither a solution to achieve good temperature stability nor a higher sensitivity compared with normal ones and hence are not candidates for application

  10. Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions

    Directory of Open Access Journals (Sweden)

    Shweta Meena

    2017-12-01

    Full Text Available Spin polarized properties of fluorinated graphene as tunnel barrier with CrO2 as two HMF electrodes are studied using first principle methods based on density functional theory. Fluorinated graphene with different fluorine coverages is explored as tunnel barriers in magnetic tunnel junctions. Density functional computation for different fluorine coverages imply that with increase in fluorine coverages, there is increase in band gap (Eg of graphene, Eg ∼ 3.466 e V was observed when graphene sheet is fluorine adsorbed on both-side with 100% coverage (CF. The results of CF graphene are compared with C4F (fluorination on one-side of graphene sheet with 25% coverage and out-of-plane graphene based magnetic tunnel junctions. On comparison of the results it is observed that CF graphene based structure offers high TMR ∼100%, and the transport of carrier is through tunneling as there are no transmission states near Fermi level. This suggests that graphene sheet with both-side fluorination with 100% coverages acts as a perfect insulator and hence a better barrier to the carriers which is due to negligible spin down current (I↓ in both Parallel Configuration (PC and Antiparallel Configuration (APC.

  11. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  12. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  13. Large magnetoresistance tunnelling through a magnetically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu Maowang; Zhang Lide

    2003-01-01

    Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system

  14. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  15. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  16. Magneto-caloric and magneto-resistive properties of La0.67Ca0.33-xSrxMnO3

    International Nuclear Information System (INIS)

    Reves Dinesen, Anders

    2004-08-01

    This thesis presents results of an experimental investigation of magneto-caloric and magneto-resistive properties of a series of polycrystalline Ca- and Sr-doped lanthanum manganites, La 0.67 Ca 0.33-x Sr x MnO 3 (0≤ x ≤ 0.33), with the perovskite structure. The samples consisted of sintered oxide powders prepared the glycine-nitrate combustion technique. The compounds were ferromagnetic and showed a Curie transition in the temperature range 267370 K (T C increased with increasing x). An analysis of the structural properties was carried out by means of x-ray diffraction and the Rietveld technique. The variation of the Ca/Sr ratio was found to cause a transition from orthorhombic to rhombohedral symmetry in the composition range 0.110 0.67 Ca 0.33-x Sr x MnO 3 samples was measured directly and indirectly (by means of magnetization measurements). All the samples showed a magnetocaloric effect in the vicinity of T C . A model for the mag-netocaloric effect based on Weiss mean field theory and classical theories for heat capacities was developed. The model provided reasonable predictions of the magneto-caloric properties of the samples. The compounds with low Sr content showed a magnetocaloric effect comparable to that of Gadolinium, the prototypical working material for magnetic refrigeration at room temperature. A less comprehensive part of the investigation regarded the magneto-resistive properties of the La 0.67 Ca 0.33-x Sr x MnO 3 system. It was found that th polycrystalline nature of the compounds played a decisive role for the magnetotransport properties. Characteristic grain boundary effects, such as a low-field magnetoresistance, which is absent in single-crystalline perovskites, were observed. The low-field effect is usually ascribed to spin-dependent scattering in grain boundaries. Qualitatively the results obtained for the La 0.67 Ca 0.33-x Sr x MnO 3 samples were consistent with this model. The resistivity contribution arising from the presence of

  17. The influence of magnetic and electronic inhomogeneities on magnetotransmission and magnetoresistance of La0.67Sr0.33MnO3 films

    International Nuclear Information System (INIS)

    Sukhorukov, Yu.P.; Nosov, A.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Telegin, A.V.; Favre-Nicolin, E.; Ranno, L.

    2005-01-01

    The optical (absorption of light and magnetotransmission of IR radiation), magnetic, and transport properties of the epitaxial La 0.67 Sr 0.33 MnO 3 films of different thickness grown by laser ablation on the (100) SrTiO 3 and LaAlO 3 substrates were investigated. The effect of magnetotransmission reaches 6% at the temperature of 350 K while magnetoresistance reaches 7.6% at 354 K in a magnetic field of 8 kOe. The factors, which influence the values of magnetotransmission and magnetoresistance of manganite films, are discussed

  18. Colossal elastoresistance, electroresistance and magnetoresistance in Pr0.5Sr0.5MnO3 thin films

    International Nuclear Information System (INIS)

    Chen, Liping; Guo, Xuexiang; Gao, J.

    2016-01-01

    Pr 0.5 Sr 0.5 MnO 3 thin films on substrates of (001)-oriented LaAlO 3 were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of ~1.3% brings a great resistivity change of ~98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I 1 μA )−ρ(I 1000 μA )]/ρ(I 1 μA ) reaches ~70% at T=25 K, much higher than ER~7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence. - Highlights: • The electric current-induced electroresistance (ER) and magnetoresistance (MR)studies on PLD grown Pr 0.5 Sr 0.5 MnO 3 /(001) LaAlO 3 films were found to be greatly sensitive to the film thickness arising from the strain. • It is shown that, 60 nm film exhibit compressive in-plane strain which leads to phase separation and hence colossal MR and ER. • Our results suggest that the manganites located at phase boundary may be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance.

  19. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  20. Theoretical study of the Raman active CDW gap mode in manganites

    International Nuclear Information System (INIS)

    Rout, G C; Panda, Saswati; Behera, S N

    2010-01-01

    We report here the microscopic theory of the Raman spectra of the colossal magnetoresistive (CMR) manganite systems. The system is described by a model Hamiltonian consisting of the double exchange interaction in addition to the charge ordering interaction in the e g band and spin-spin interaction among the t 2g core electrons. Further the phonon coupling to the conduction electron density is incorporated in the model for phonons in the harmonic approximation. The spectral density function for the Raman spectra is calculated from the imaginary part of the phonon Green's function. The calculated spectra display the Raman active bare phonon peak along with the charge ordering peak. The magnetic field and temperature dependence of the charge ordering peak agrees with the 480 cm -1 JT mode observed in the experiments. The evolution of this mode is investigated in the report.

  1. Synthesis and characterisation of La1-xNaxMnO3+δ thin films manganites

    International Nuclear Information System (INIS)

    Alessandri, I.; Malavasi, L.; Bontempi, E.; Mozzati, M.C.; Azzoni, C.B.; Flor, G.; Depero, L.E.

    2004-01-01

    Optimally sodium doped lanthanum manganite (LNMO) thin films have been grown onto differently oriented NdGaO 3 single crystals substrates by means of radio-frequency (RF)-magnetron sputtering technique, in order to investigate the role of the strain imposed by lattice mismatch on the magnetotransport properties. Films deposited onto NdGaO 3 (1 1 0) experiment a slight in-plane compressive strain that can be tuned by the thickness and allows to achieve colossal magnetoresistive effects. On the contrary, the change of the substrate orientation induces an in-plane tensile strain, making the film insulating. Above observations are explained by considering the effect of distortions of the Mn-O coordination polyhedra

  2. Graphic User Interface for Monte Carlo Simulation of Ferromagnetic/Antiferromagnetic Manganite Bilayers

    Directory of Open Access Journals (Sweden)

    Hector Barco-Ríos

    2011-06-01

    Full Text Available The manganites have been widely studied because of their important properties as colossal magnetoresistance and exchange bias that are important phenomena used in many technological applications. For this reason, in this work, a study of the exchange bias effect present in La2/3Ca1/3MnO3/La1/3Ca2/3MnO3. This study was carried out by using the Monte Carlo method and the Metropolis Algorithm. In order to make easy this study, a graphic user interface was built alloying a friendly interaction. The interface permits to control the thickness of Ferromagnetic and Antiferromagnetic layer, temperatures the magnetic field, the number of Monte Carlo steps and the exchange parameters. Results obtained reflected the influence of all of these parameters on the exchange bias and coercive fields.

  3. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  4. Wheatstone bridge-giant magnetoresistance (GMR) sensors based on Co/Cu multilayers for bio-detection applications

    Science.gov (United States)

    Antarnusa, G.; Elda Swastika, P.; Suharyadi, E.

    2018-04-01

    A Wheatstone bridge-giant magnetoresistance (GMR) sensor was successfully developed for a potential biomaterial detection. In order to achieve this, a giant magnetoresistive [Co(1.5nm/Cu(1.0nm)]20 multilayer structures have been fabricated by DC magnetron sputtering method, showing a magnetoresistance (MR) of 2.7%. The X-Ray diffraction (XRD) patterns showed that Co/Cu film multilayer has a high degree of crystallinity with a single peak corresponding to face-centered cubic (111) structure at 2θ = 44.1°. Co/Cu multilayers exhibit a soft magnetic behavior with the saturation magnetization (Ms) of 1489 emu/cc and the coercivity (Hc) of 11.2 Oe. The magnetite Fe3O4 nanoparticles used as a bimolecular labels (nanotags) were synthesized via co-precipitation method, exhibiting a soft magnetic behavior with Ms of 77.16 emu/g and Hc of 49 Oe. XRD patterns and transmission electron microscopy (TEM) images showed that Fe3O4 was well crystallized and it grew in their inverse spinel structure with an average size of around 10 nm. The GMR sensor design was used to detect a biomolecules of streptavidin magnetic particles with concentration 10, 20, 30, and 40 μl/ml and α-amylase enzyme with consentration 10, 20, 30, and 40 μl/ml captured using polyethylene glycol (PEG)/Fe3O4 nanoparticles. Various applied magnetic fields of 0-650 Gauss have been performed using electromagnetic with the various currents of 0-5 A. Here, the final value of the output voltage signals for the streptavidin magnetic particles concentration is 1.2 mV (10 μl/ml). The output voltage changes with the increase of concentration. It was reported that the output voltage signal of the Wheatstone bridge exhibits log-linear function in real time measurement of the concentration of streptavidin magnetic particles and α-amylase enzyme respectively, making the sensor suitable for use as a biomolecule concentration detector. Thus, the combination of Co/Cu multilayer, Wheatstone bridge, magnetite and PEG polymer

  5. Effect of CDW and magnetic interactions on the eg electrons of the manganite systems

    International Nuclear Information System (INIS)

    Rout, G.C.; Panda, S.; Behera, S.N.

    2009-01-01

    We address a model study which includes the co-existence of the charge density wave (CDW) and ferromagnetic interactions in order to explain the colossal magnetoresistance (CMR) in manganites. The Hamiltonian consists of the ferromagnetic Hund's rule exchange interaction between e g and t 2g spins, Heisenberg core spin interactions and the CDW interaction present in the e g band electrons. The core electron magnetization, induced e g electron magnetization and the CDW gap are calculated using Zubarev's Green's function technique and determined self-consistently. The effect of core electron magnetization and the CDW interaction on the induced magnetization as well as on the occupation number in the different spin states of the e g band electrons are investigated by varying the model parameters of the system like the CDW coupling, the exchange coupling, the Heisenberg coupling and the external field. It is observed that the induced magnetization exhibits re-entrant behaviour and exists within a narrow temperature range just below the Curie temperature. This unusual behaviour of the e g band electrons will throw some new insights on the physical properties of the manganite systems.

  6. Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance

    Science.gov (United States)

    Flatté, Michael E.

    2013-03-01

    A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.

  7. Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

    Science.gov (United States)

    Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

    2003-07-08

    Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

  8. Biomolecule detection using wheatstone bridge giant magnetoresistance (GMR) sensors based on CoFeB spin-valve thin film

    Science.gov (United States)

    Elda Swastika, P.; Antarnusa, G.; Suharyadi, E.; Kato, T.; Iwata, S.

    2018-04-01

    A potential wheatstone bridge giant magnetoresistance (GMR) biosensor have been successfully developed for biomolecule detection. [IrMn(10 nm)/CoFe(3 nm)/Cu(2.2 nm)/CoFeB(10 nm)] spin-valve structure has been chosen as the magnetic sensing surface, showing a magnetoresistance (MR) of 6% fabricated by DC magnetron sputtering method. The Fe3O4 magnetic nanoparticles used as biomolecular labels (nanotags) was synthesized by co-precipitation method, exhibiting soft magnetic behavior with saturation magnetization (Ms), remanent magnetization (Mr) and coercivity (Hc) is 77.2 emu/g, 7.8 emu/g and 51 Oe, respectively. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) images showed that Fe3O4 was well crystallized and grew in their inverse spinel structure, highly uniform morphology with an average grain size was about 20 nm. Fe3O4 was coated with polyethylene-glycol (PEG)-4000 for surface functionalization. Detection of biomolecule such as formalin, gelatin from bovine-skin and porcine-skin were dispersed in ethanol at room temperature. Induction would cause a shift in output voltage with a minimum delta output voltage (ΔV) 4.937 mV (10%) for formalin detection, 2.268 mV (7%) for bovine-skin gelatin and 2.943 mV (7%) for porcine-skin gelatin detection. The ΔV of the wheatstone bridge in real-time measurement decrease by increase in biomolecules concentration. The change of ΔV with various concentration of biomolecule indicates that the spin-valve thin film with wheatstone-bridge circuit is potential as a biosensor.

  9. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  10. Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral coupling

    NARCIS (Netherlands)

    Liao, Zhaoliang; Huijben, Mark; Zhong, Z.; Gauquelin, N.; Macke, S.; Green, R.J.; van Aert, S.; Verbeeck, J.; van Tendeloo, G.; Held, K.; Sawatzky, G.A.; Koster, Gertjan; Rijnders, Augustinus J.H.M.

    2016-01-01

    Controlled in-plane rotation of the magnetic easy axis in manganite heterostructures by tailoring the interface oxygen network could allow the development of correlated oxide-based magnetic tunnelling junctions with non-collinear magnetization, with possible practical applications as miniaturized

  11. Investigation of magnetic transitions through ultrasonic measurements in double-layered CMR manganite La1.2Sr1.8Mn2O7

    Science.gov (United States)

    Reddy, Y. S.; Vishnuvardhan Reddy, C.

    2014-03-01

    A polycrystalline, double-layered, colossal magnetoresistive manganite La1.2Sr1.8Mn2O7 is synthesized by sol-gel process and its magnetic and ultrasonic properties were investigated in the temperature range 80-300 K. The sample has Curie temperature at 124 K, where the sample exhibits a transition from paramagnetic insulator to ferromagnetic metallic state. The longitudinal sound velocity measurements show a significant hardening of sound velocity below TC, which may be attributed to the coupling between ferromagnetic spins and longitudinal acoustic phonons. The magnetization and ultrasonic studies reveal the presence of secondary transition at ≈ 260 K in this sample. The present sound velocity measurement results confirm the reliability of ultrasonic investigations as an independent tool to probe magnetic transitions in manganites.

  12. Thermal transport in cuprates, cobaltates, and manganites

    International Nuclear Information System (INIS)

    Berggold, K.

    2006-09-01

    The subject of this thesis is the investigation of the thermal transport properties of three classes of transition-metal oxides: Cuprates, cobaltates, and manganites. The layered cuprates R 2 CuO 4 with R=La, Pr, Nd, Sm, Eu, and Gd show an anomalous thermal conductivity κ. Two maxima of κ are observed as a function of temperature for a heat current within the CuO 2 planes, whereas for a heat current perpendicular to the CuO 2 planes only a conventional phononic low-temperature maximum of κ is present. Evidence is provided that the high-temperature maximum is caused by heat-carrying excitations on the CuO 2 square lattice. Moreover, it is shown that the complex low-temperature and magnetic-field behavior of κ in Nd 2 CuO 4 is most likely caused by additional phonon scattering rather than by heat-carrying Nd magnons, as it was proposed in the literature. In the cobaltates RCoO 3 with R=La, Pr, Nd, and Eu, a temperature-induced spin-state transition of the Co 3+ ions occurs. It is shown that the additional lattice disorder caused by the random distribution of populated higher spin states causes a large suppression of the thermal conductivity of LaCoO 3 for T>25 K. The effect is much weaker in PrCoO 3 and NdCoO 3 due to the increased spin gap. A quantitative analysis of the responsible mechanisms based on EuCoO 3 as a reference compound is provided. A main result is that the static disorder is sufficient to explain the suppression of κ. No dynamical Jahn-Teller distortion, as proposed in the literature, is necessary to enhance the scattering strength. Below 25 K, k is mainly determined by resonant phonon scattering on paramagnetic impurity levels, e.g. caused by oxygen non-stoichiometry. Such a suppression of the thermal conductivity by resonant scattering processes is e.g. known from Holmium ethylsulfate. This effect is most pronounced in LaCoO 3 , presumably due to magnetic polaron formation. In the doped compounds La 1-x Sr x CoO 3 with 0≤x≤0.25, a large

  13. Thermal transport in cuprates, cobaltates, and manganites

    Energy Technology Data Exchange (ETDEWEB)

    Berggold, K.

    2006-09-15

    The subject of this thesis is the investigation of the thermal transport properties of three classes of transition-metal oxides: Cuprates, cobaltates, and manganites. The layered cuprates R{sub 2}CuO{sub 4} with R=La, Pr, Nd, Sm, Eu, and Gd show an anomalous thermal conductivity {kappa}. Two maxima of {kappa} are observed as a function of temperature for a heat current within the CuO{sub 2} planes, whereas for a heat current perpendicular to the CuO{sub 2} planes only a conventional phononic low-temperature maximum of {kappa} is present. Evidence is provided that the high-temperature maximum is caused by heat-carrying excitations on the CuO{sub 2} square lattice. Moreover, it is shown that the complex low-temperature and magnetic-field behavior of {kappa} in Nd{sub 2}CuO{sub 4} is most likely caused by additional phonon scattering rather than by heat-carrying Nd magnons, as it was proposed in the literature. In the cobaltates RCoO{sub 3} with R=La, Pr, Nd, and Eu, a temperature-induced spin-state transition of the Co{sup 3+} ions occurs. It is shown that the additional lattice disorder caused by the random distribution of populated higher spin states causes a large suppression of the thermal conductivity of LaCoO{sub 3} for T>25 K. The effect is much weaker in PrCoO{sub 3} and NdCoO{sub 3} due to the increased spin gap. A quantitative analysis of the responsible mechanisms based on EuCoO{sub 3} as a reference compound is provided. A main result is that the static disorder is sufficient to explain the suppression of {kappa}. No dynamical Jahn-Teller distortion, as proposed in the literature, is necessary to enhance the scattering strength. Below 25 K, k is mainly determined by resonant phonon scattering on paramagnetic impurity levels, e.g. caused by oxygen non-stoichiometry. Such a suppression of the thermal conductivity by resonant scattering processes is e.g. known from Holmium ethylsulfate. This effect is most pronounced in LaCoO{sub 3}, presumably due to

  14. Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

    International Nuclear Information System (INIS)

    Mishra, Amita; Dutta, Anirban; Samaddar, Sayanti; Gupta, Anjan K.

    2013-01-01

    We report the wet chemical deposition of single crystalline epitaxial thin films of the colossal magneto-resistive manganite La 0.67 Sr 0.33 MnO 3 on the lattice-matched (001)-face of a La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 substrate. Topographic images of these films taken with a scanning tunneling microscope show atomically flat terraces separated by steps of monatomic height. The resistivity of these films shows an insulator-metal transition at 310 K, nearly coincident with the Curie temperature of 340 K, found from magnetization measurements. The films show a magnetoresistance of 7% at 300 K and 1.2 T. Their saturation magnetization value at low temperatures is consistent with that of the bulk. - Highlights: ► Wet chemical deposition of La 0.67 Sr 0.33 MnO 3 (LSMO) on a lattice-matched substrate. ► Single crystalline epitaxial LSMO films obtained. ► Flat terraces separated by monatomic steps observed by scanning tunneling microscope

  15. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

    Science.gov (United States)

    Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

    2017-12-28

    The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

  16. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao

    2014-01-01

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  17. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James

    2014-01-29

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  18. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  19. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  20. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Newrock, R.S.; Maxfield, B.W.

    1976-01-01

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  1. Large, non-saturating magnetoresistance in WTe2.

    Science.gov (United States)

    Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J

    2014-10-09

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  2. Tunable two-phase coexistence in half-doped manganites

    Indian Academy of Sciences (India)

    Our recent work on half-doped manganites builds on those ideas to explain our data showing continuously tunable phase coexistence of FM and AFM states. Macroscopic hysteresis across transitions is often used to assert their first-order nature, and this has also been done in the case of half-doped manganites [6]. Kuwa-.

  3. Colossal elastoresistance, electroresistance and magnetoresistance in Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Liping, E-mail: chenliping0003@163.com [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Department of Physics, Hong Kong University, Hong Kong (China); Guo, Xuexiang [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Gao, J. [Department of Physics, Hong Kong University, Hong Kong (China)

    2016-05-01

    Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} thin films on substrates of (001)-oriented LaAlO{sub 3} were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of ~1.3% brings a great resistivity change of ~98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I{sub 1} {sub μA})−ρ(I{sub 1000} {sub μA})]/ρ(I{sub 1} {sub μA}) reaches ~70% at T=25 K, much higher than ER~7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence. - Highlights: • The electric current-induced electroresistance (ER) and magnetoresistance (MR)studies on PLD grown Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3}/(001) LaAlO{sub 3} films were found to be greatly sensitive to the film thickness arising from the strain. • It is shown that, 60 nm film exhibit compressive in-plane strain which leads to phase separation and hence colossal MR and ER. • Our results suggest that the manganites located at phase boundary may be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance.

  4. Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Zhenchao; Yamamoto, Tatsuya [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Kubota, Takahide; Takanashi, Koki [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Center for Spintronics Research Network (CSRN), Tohoku University, Sendai 980-8577 (Japan)

    2016-06-06

    Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm{sup 2}) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm{sup 2}) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm{sup 2}) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

  5. Electrical transport and giant magnetoresistance in La{sub 0.62}Er{sub 0.05}Ba{sub 0.33}Fe{sub x}Mn{sub 1−x}O{sub 3} (x = 0.00, and 0.15) manganites

    Energy Technology Data Exchange (ETDEWEB)

    Abassi, Mounira, E-mail: manoura881@outlook.fr [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 (Tunisia); Mohamed, Za; Dhahri, J. [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 (Tunisia); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France)

    2015-08-05

    Highlights: • The samples exhibit PM–FM phase transition. • The electrical transport is investigated. • Low temperature minimum resistivity is observed. - Abstract: We have investigated the influence of fer (Fe) doping on the magneto-electrical properties of polycrystalline samples La{sub 0.62}Er{sub 0.05}Ba{sub 0.33}Fe{sub x}Mn{sub 1−x}O{sub 3} (x = 0.00, 0.10 and 0.15), prepared through conventional solid state ceramics route. Comparison of experimental data with the theoretical models shows that in the metal–ferromagnetic region, the electrical behavior of the three samples is quite well described by a theory based on electron–phonon, electron–electron, electron–magnon and Kondo-like spin dependent scattering. For the high temperature paramagnetic insulating regime, the adiabatic small polaron hopping (SPH) model is found to fit well the experimental curves.

  6. Formation of manganite fibers under the directing of cationic surfactant

    International Nuclear Information System (INIS)

    Sun Xiaodan; Kong Xiangdong; Wang Yude; Ma Chunlai; Cui Fuzhai; Li Hengde

    2006-01-01

    The effects of organic molecules on the morphology control of inorganic materials in the process of biomineralization have long been realized. Nowadays, these effects have been utilized to prepare inorganic materials with desired morphologies in different systems. In this paper, manganite (MnOOH) fibers are chemically synthesized under extremely low surfactant (cetyltrimethylammonium bromide CTAB) concentrations at basic conditions. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) are used to characterize the products. Characterization of samples aged for different time shows that the formation of MnOOH fibers is intimately related to a layered structured manganese oxide. A corresponding transformation mechanism is proposed based on the experiment results, and it could be inferred that CTAB plays an important directing role in this process

  7. Role of structure imperfection in the formation of the magnetotransport properties of rare-earth manganites with a perovskite structure

    Energy Technology Data Exchange (ETDEWEB)

    Pashchenko, A. V., E-mail: alpash@mail.ru; Pashchenko, V. P.; Prokopenko, V. K. [National Academy of Sciences of Ukraine, Galkin Donetsk Institute for Physics and Engineering (Ukraine); Turchenko, V. A. [Joint Institute for Nuclear Research (Russian Federation); Revenko, Yu. F.; Mazur, A. S.; Sycheva, V. Ya.; Liedienov, N. A. [National Academy of Sciences of Ukraine, Galkin Donetsk Institute for Physics and Engineering (Ukraine); Pitsyuga, V. G. [Donetsk National University (Ukraine); Levchenko, G. G. [National Academy of Sciences of Ukraine, Galkin Donetsk Institute for Physics and Engineering (Ukraine)

    2017-01-15

    The structure, the structure imperfection, and the magnetoresistance, magnetotransport, and microstructure properties of rare-earth perovskite La{sub 0.3}Ln{sub 0.3}Sr{sub 0.3}Mn{sub 1.1}O{sub 3–δ} manganites are studied by X-ray diffraction, thermogravimetry, electrical resistivity measurement, magnetic, {sup 55}Mn NMR, magnetoresistance measurement, and scanning electron microscopy. It is found that the structure imperfection increases, and the symmetry of a rhombohedrally distorted R3̅c perovskite structure changes into its pseudocubic type during isovalent substitution for Ln = La{sup 3+}, Pr{sup 3+}, Nd{sup 3+}, Sm{sup 3+}, or Eu{sup 3+} when the ionic radius of an A cation decreases. Defect molar formulas are determined for a real perovskite structure, which contains anion and cation vacancies. The decrease in the temperatures of the metal–semiconductor (T{sub ms}) and ferromagnet–paramagnet (T{sub C}) phase transitions and the increase in electrical resistivity ρ and activation energy E{sub a} with increasing serial number of Ln are caused by an increase in the concentration of vacancy point defects, which weaken the double exchange 3d{sup 4}(Mn{sup 3+})–2p{sup 6}(O{sup 2–})–3d{sup 3}(Mn{sup 4+})–V{sup (a)}–3d{sup 4}(Mn{sup 3+}). The crystal structure of the compositions with Ln = La contains nanostructured planar clusters, which induce an anomalous magnetic hysteresis at T = 77 K. Broad and asymmetric {sup 55}Mn NMR spectra support the high-frequency electronic double exchange Mn{sup 3+}(3d{sup 4}) ↔ O{sup 2–}(2p{sup 6}) ↔ Mn{sup 4+}(3d{sup 3}) and indicate a heterogeneous surrounding of manganese by other ions and vacancies. A correlation is revealed between the tunneling magnetoresistance effect and the crystallite size. A composition–structure imperfection–property experimental phase diagram is plotted. This diagram supports the conclusion about a strong influence of structure imperfection on the formation of the magnetic

  8. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  9. Magnetoresistive biosensors for quantitative proteomics

    Science.gov (United States)

    Zhou, Xiahan; Huang, Chih-Cheng; Hall, Drew A.

    2017-08-01

    Quantitative proteomics, as a developing method for study of proteins and identification of diseases, reveals more comprehensive and accurate information of an organism than traditional genomics. A variety of platforms, such as mass spectrometry, optical sensors, electrochemical sensors, magnetic sensors, etc., have been developed for detecting proteins quantitatively. The sandwich immunoassay is widely used as a labeled detection method due to its high specificity and flexibility allowing multiple different types of labels. While optical sensors use enzyme and fluorophore labels to detect proteins with high sensitivity, they often suffer from high background signal and challenges in miniaturization. Magnetic biosensors, including nuclear magnetic resonance sensors, oscillator-based sensors, Hall-effect sensors, and magnetoresistive sensors, use the specific binding events between magnetic nanoparticles (MNPs) and target proteins to measure the analyte concentration. Compared with other biosensing techniques, magnetic sensors take advantage of the intrinsic lack of magnetic signatures in biological samples to achieve high sensitivity and high specificity, and are compatible with semiconductor-based fabrication process to have low-cost and small-size for point-of-care (POC) applications. Although still in the development stage, magnetic biosensing is a promising technique for in-home testing and portable disease monitoring.

  10. Effect of CDW and magnetic interactions on the e{sub g} electrons of the manganite systems

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G.C., E-mail: gcr@iopb.res.i [Condensed Matter Physics Group, P. G. Department of Applied Physics and Ballistics, F. M. University, Balasore 756 019 (India); Panda, S. [Trident Academy of Technology, F2/A, Chandaka Industrial Estate, Bhubaneswar 751 024 (India); Behera, S.N. [Institute of Materials Science, Planetarium Building, Bhubaneswar 751 013 (India)

    2009-11-15

    We address a model study which includes the co-existence of the charge density wave (CDW) and ferromagnetic interactions in order to explain the colossal magnetoresistance (CMR) in manganites. The Hamiltonian consists of the ferromagnetic Hund's rule exchange interaction between e{sub g} and t{sub 2g} spins, Heisenberg core spin interactions and the CDW interaction present in the e{sub g} band electrons. The core electron magnetization, induced e{sub g} electron magnetization and the CDW gap are calculated using Zubarev's Green's function technique and determined self-consistently. The effect of core electron magnetization and the CDW interaction on the induced magnetization as well as on the occupation number in the different spin states of the e{sub g} band electrons are investigated by varying the model parameters of the system like the CDW coupling, the exchange coupling, the Heisenberg coupling and the external field. It is observed that the induced magnetization exhibits re-entrant behaviour and exists within a narrow temperature range just below the Curie temperature. This unusual behaviour of the e{sub g} band electrons will throw some new insights on the physical properties of the manganite systems.

  11. Colossal elastoresistance, electroresistance and magnetoresistance in Pr0.5Sr0.5MnO3 thin films

    Science.gov (United States)

    Chen, Liping; Guo, Xuexiang; Gao, J.

    2016-05-01

    Pr0.5Sr0.5MnO3 thin films on substrates of (001)-oriented LaAlO3 were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of 1.3% brings a great resistivity change of 98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I1 μA)-ρ(I1000 μA)]/ρ(I1 μA) reaches 70% at T=25 K, much higher than ER 7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence.

  12. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  13. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  14. Linear negative magnetoresistance in two-dimensional Lorentz gases

    Science.gov (United States)

    Schluck, J.; Hund, M.; Heckenthaler, T.; Heinzel, T.; Siboni, N. H.; Horbach, J.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.; Mailly, D.

    2018-03-01

    Two-dimensional Lorentz gases formed by obstacles in the shape of circles, squares, and retroreflectors are reported to show a pronounced linear negative magnetoresistance at small magnetic fields. For circular obstacles at low number densities, our results agree with the predictions of a model based on classical retroreflection. In extension to the existing theoretical models, we find that the normalized magnetoresistance slope depends on the obstacle shape and increases as the number density of the obstacles is increased. The peaks are furthermore suppressed by in-plane magnetic fields as well as by elevated temperatures. These results suggest that classical retroreflection can form a significant contribution to the magnetoresistivity of two-dimensional Lorentz gases, while contributions from weak localization cannot be excluded, in particular for large obstacle densities.

  15. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  16. Coulomb blockade and magnetoresistance in granular La{sub 1.32}Sr{sub 1.68}Mn{sub 2}O{sub 7} under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Narjis, A., E-mail: narjis78@gmail.com [Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); El Kaaouachi, A.; Limouny, L.; Dlimi, S.; Errai, M.; Sybous, A. [Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); Kumaresavanji, M. [Centro Brasileiro de Pesquisas Fisicas (CBPF), Rua Dr. Xavier Sigaud, 150 Urca, Rio de Janeiro (Brazil)

    2013-04-15

    The transport properties in the La{sub 1.32}Sr{sub 1.68}Mn{sub 2}O{sub 7} layered manganite system have been studied in the presence of magnetic field up to 5 T. An analysis of the low temperature (T<45 K) dependence of the resistivity under hydrostatic pressure up to 25 kbars shows the spin-dependent Coulomb Blockade phenomenon. The surface phase and the link condition in grain boundaries are suggested to be responsible for the magnetoresistance data while influencing the charge transfer probability between grains. - Highlights: ►Magnetotransport in a colossal magnetoresistive material La{sub 1.32}Sr{sub 1.68}Mn{sub 2}O{sub 7}. ► The effect of the forming pressure on the magnetoresistance (MR). ► The grain size effect and charge transfer probability between grains. ► A simple model to explain the negative MR.

  17. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    2015-05-28

    May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  18. Magnetic after-effect in manganite films

    International Nuclear Information System (INIS)

    Sirena, M.; Steren, L.B.; Guimpel, J.

    2001-01-01

    The time dependence of the magnetic and transport properties on La 0.6 Sr 0.4 MnO 3 films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M c +M d exp(-t/τ)+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found

  19. Intrinsic colossal magnetoresistance effect in thin-film Pr0.5Sr0.5MnO3 through dimensionality switching.

    Science.gov (United States)

    Uozu, Y; Wakabayashi, Y; Ogimoto, Y; Takubo, N; Tamaru, H; Nagaosa, N; Miyano, K

    2006-07-21

    A homogeneous colossal magnetoresistance (CMR) effect at low temperatures has been found in a thin-film perovskite manganite Pr0.5Sr0.5MnO3. The transition is driven not by the spin alignment as in usual CMR in bulk samples but by the localization-delocalization transition switched by the change in the effective dimensionality. Two-dimensional (x2-y2)-orbital ordering enhanced by the substrate strain is essential for the stabilization of the insulating localized state, which is on the verge of the first-order transition to the three-dimensional metallic ferromangetic state.

  20. Structural domain walls in polar hexagonal manganites

    Science.gov (United States)

    Kumagai, Yu

    2014-03-01

    The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.

  1. Quasi-Particle Relaxation and Quantum Femtosecond Magnetism in Non-Equilibrium Phases of Insulating Manganites

    Science.gov (United States)

    Perakis, Ilias; Kapetanakis, Myron; Lingos, Panagiotis; Barmparis, George; Patz, A.; Li, T.; Wang, Jigang

    We study the role of spin quantum fluctuations driven by photoelectrons during 100fs photo-excitation of colossal magneto-resistive manganites in anti-ferromagnetic (AFM) charge-ordered insulating states with Jahn-Teller distortions. Our mean-field calculation of composite fermion excitations demonstrates that spin fluctuations reduce the energy gap by quasi-instantaneously deforming the AFM background, thus opening a conductive electronic pathway via FM correlation. We obtain two quasi-particle bands with distinct spin-charge dynamics and dependence on lattice distortions. To connect with fs-resolved spectroscopy experiments, we note the emergence of fs magnetization in the low-temperature magneto-optical signal, with threshold dependence on laser intensity characteristic of a photo-induced phase transition. Simultaneously, the differential reflectivity shows bi-exponential relaxation, with fs component, small at low intensity, exceeding ps component above threshold for fs AFM-to-FM switching. This suggests the emergence of a non-equilibrium metallic FM phase prior to establishment of a new lattice structure, linked with quantum magnetism via spin/charge/lattice couplings for weak magnetic fields.

  2. Giant superconductivity-induced modulation of the ferromagnetic magnetization in a cuprate-manganite superlattice.

    Science.gov (United States)

    Hoppler, J; Stahn, J; Niedermayer, Ch; Malik, V K; Bouyanfif, H; Drew, A J; Rössle, M; Buzdin, A; Cristiani, G; Habermeier, H-U; Keimer, B; Bernhard, C

    2009-04-01

    Artificial multilayers offer unique opportunities for combining materials with antagonistic orders such as superconductivity and ferromagnetism and thus to realize novel quantum states. In particular, oxide multilayers enable the utilization of the high superconducting transition temperature of the cuprates and the versatile magnetic properties of the colossal-magnetoresistance manganites. However, apart from exploratory work, the in-depth investigation of their unusual properties has only just begun. Here we present neutron reflectometry measurements of a [Y(0.6)Pr(0.4)Ba(2)Cu(3)O(7) (10 nm)/La(2/3)Ca(1/3)MnO(3) (10 nm)](10) superlattice, which reveal a surprisingly large superconductivity-induced modulation of the vertical ferromagnetic magnetization profile. Most surprisingly, this modulation seems to involve the density rather than the orientation of the magnetization and is highly susceptible to the strain, which is transmitted from the SrTiO(3) substrate. We outline a possible explanation of this unusual superconductivity-induced phenomenon in terms of a phase separation between ferromagnetic and non-ferromagnetic nanodomains in the La(2/3)Ca(1/3)MnO(3) layers.

  3. A model study of tunneling conductance spectra of ferromagnetically ordered manganites

    Science.gov (United States)

    Panda, Saswati; Kar, J. K.; Rout, G. C.

    2018-02-01

    We report here the interplay of ferromagnetism (FM) and charge density wave (CDW) in manganese oxide systems through the study of tunneling conductance spectra. The model Hamiltonian consists of strong Heisenberg coupling in core t2g band electrons within mean-field approximation giving rise to ferromagnetism. Ferromagnetism is induced in the itinerant eg electrons due to Kubo-Ohata type double exchange (DE) interaction among the t2g and eg electrons. The charge ordering (CO) present in the eg band giving rise to CDW interaction is considered as the extra-mechanism to explain the colossal magnetoresistance (CMR) property of manganites. The magnetic and CDW order parameters are calculated using Zubarev's Green's function technique and solved self-consistently and numerically. The eg electron density of states (DOS) calculated from the imaginary part of the Green's function explains the experimentally observed tunneling conductance spectra. The DOS graph exhibits a parabolic gap near the Fermi energy as observed in tunneling conductance spectra experiments.

  4. Evaluation of strontium substituted lanthanum manganite-based solid oxide fuel cell cathodes using cone-shaped electrodes and electrochemical impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    Kent Kammer Hansen

    2018-05-01

    Full Text Available Five La1-xSrxMnO3+d-based perovskites (x = 0, 0.05, 0.15, 0.25 and 0.50 were synthesized and investigated by powder XRD, dilatometry and electrochemical impedance spectroscopy measurements and cone-shaped electrode techniques. The thermal expansion coefficient increased with increasing strontium content. It was shown that the total polarization resistance was the lowest for the intermediate compound, La0.95Sr0.05MnO3+d. Two arcs were found in the impedance spectra. These arcs were attributed to two one-electron processes. The results indicate that either Mn(III is the catalytically active species or that the redox capacity is important for the activity of the compounds towards the reduction of oxygen in a solid oxide fuel cell. At higher temperatures, the oxide ionic conductivity may also play a role.

  5. Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

    OpenAIRE

    Casper, Frederick; Felser, Claudia

    2007-01-01

    The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

  6. Enhanced magnetotransport in nanopatterned manganite nanowires.

    Science.gov (United States)

    Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

    2014-02-12

    We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

  7. Fast Magnetoresistive Random-Access Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  8. Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements

    Science.gov (United States)

    Malone, Mitchell C.; Morath, Christian P.; Fahey, Stephen; Klein, Brianna; Cowan, Vincent M.; Krishna, Sanjay

    2015-09-01

    InAs/GaSb type-II strained-layer superlattice (T2SLS) materials are being considered for space-based infrared detector applications. However, an inadequate understanding of the role of carrier transport, specifically the vertical mobility, in the radiation tolerance of T2SLS detectors remains. Here, progress towards a vertical transport study of proton-irradiated, p-type InAs/GaSb T2SLS materials using magnetoresistance measurements is reported. Measurements in the growth direction of square mesas formed from InAs/GaSb superlattice material were performed using two distinct contact geometries in a Kelvin mode setup at variable magnetic fields, ranging from -9 T to 9 T, and temperatures, ranging from 5 K and 300 K. The results here suggested multi-carrier conduction and a field-dependent series resistance from the contact layer were present. The implications of these results and the plans for future magnetoresistance measurements on proton-irradiated T2SLS materials are discussed.

  9. Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films

    International Nuclear Information System (INIS)

    Hu, F.X.; Gao, J.; Wang, Z.H.

    2006-01-01

    The electroresistance and magnetoresistance effects have been investigated in La 0.9 Ba 0.1 MnO 3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature T C of the film at ∼300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found. The reduction of the peak resistance reaches ∼27% with an electric current density up to 1.3 x 10 5 A cm -2 . We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density ∼1.3 x 10 5 A cm -2 was found to be equivalent to the CMR effect caused by 1.5 T near T C . The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications

  10. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

    Science.gov (United States)

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

    2015-09-21

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

  11. Significant enhancement of magnetoresistance with the reduction of particle size in nanometer scale

    Science.gov (United States)

    Das, Kalipada; Dasgupta, P.; Poddar, A.; Das, I.

    2016-01-01

    The Physics of materials with large magnetoresistance (MR), defined as the percentage change of electrical resistance with the application of external magnetic field, has been an active field of research for quite some times. In addition to the fundamental interest, large MR has widespread application that includes the field of magnetic field sensor technology. New materials with large MR is interesting. However it is more appealing to vast scientific community if a method describe to achieve many fold enhancement of MR of already known materials. Our study on several manganite samples [La1−xCaxMnO3 (x = 0.52, 0.54, 0.55)] illustrates the method of significant enhancement of MR with the reduction of the particle size in nanometer scale. Our experimentally observed results are explained by considering model consisted of a charge ordered antiferromagnetic core and a shell having short range ferromagnetic correlation between the uncompensated surface spins in nanoscale regime. The ferromagnetic fractions obtained theoretically in the nanoparticles has been shown to be in the good agreement with the experimental results. The method of several orders of magnitude improvement of the magnetoresistive property will have enormous potential for magnetic field sensor technology. PMID:26837285

  12. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Mujika, M.; Arana, S.; Castano, E.

    2007-01-01

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  13. Manganite based hetero-junction structure of La_0_._7Sr_0_._7_−_xCa_xMnO_3 and CaMnO_3_−_δ for cross-point arrays

    International Nuclear Information System (INIS)

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-01-01

    Resistive random access memory and the corresponding cross-point array (CPA) structure have received a great deal of attention for high-density next generation non-volatile memory. However, the cross-talk issue of CPA structure by sneak current should be overcome to realize the highest density integration. To accomplish this, the sneak current can be minimized by high, nonlinear characteristic behaviors of resistive switching (RS). Therefore this study fabricated pnp bipolar hetero-junction structure using the perovskite manganite family, such as La_0_._7Sr_0_._3_−_xCa_xMnO_3 (LSCMO) and CaMnO_3_−_δ (CMO), to obtain nonlinear RS behavior. The pnp structure not only shows nonlinear characteristics, but also a tunable characteristic with Ca substitution. (paper)

  14. Microscopic theory of longitudinal sound velocity in charge ordered manganites

    International Nuclear Information System (INIS)

    Rout, G C; Panda, S

    2009-01-01

    A microscopic theory of longitudinal sound velocity in a manganite system is reported here. The manganite system is described by a model Hamiltonian consisting of charge density wave (CDW) interaction in the e g band, an exchange interaction between spins of the itinerant e g band electrons and the core t 2g electrons, and the Heisenberg interaction of the core level spins. The magnetization and the CDW order parameters are considered within mean-field approximations. The phonon Green's function was calculated by Zubarev's technique and hence the longitudinal velocity of sound was finally calculated for the manganite system. The results show that the elastic spring involved in the velocity of sound exhibits strong stiffening in the CDW phase with a decrease in temperature as observed in experiments.

  15. Microscopic theory of longitudinal sound velocity in charge ordered manganites

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G C [Condensed Matter Physics Group, PG Department of Applied Physics and Ballistics, FM University, Balasore 756 019 (India); Panda, S, E-mail: gcr@iopb.res.i [Trident Academy of Technology, F2/A, Chandaka Industrial Estate, Bhubaneswar 751 024 (India)

    2009-10-14

    A microscopic theory of longitudinal sound velocity in a manganite system is reported here. The manganite system is described by a model Hamiltonian consisting of charge density wave (CDW) interaction in the e{sub g} band, an exchange interaction between spins of the itinerant e{sub g} band electrons and the core t{sub 2g} electrons, and the Heisenberg interaction of the core level spins. The magnetization and the CDW order parameters are considered within mean-field approximations. The phonon Green's function was calculated by Zubarev's technique and hence the longitudinal velocity of sound was finally calculated for the manganite system. The results show that the elastic spring involved in the velocity of sound exhibits strong stiffening in the CDW phase with a decrease in temperature as observed in experiments.

  16. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  17. Magnetic after-effect in manganite films

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M. E-mail: sirenam@ib.cnea.gov.ar; Steren, L.B.; Guimpel, J

    2001-05-01

    The time dependence of the magnetic and transport properties on La{sub 0.6}Sr{sub 0.4}MnO{sub 3} films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M{sub c}+M{sub d} exp(-t/{tau})+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found.

  18. Magnetoimpedance effect in manganite La2/3Ba1/3MnO3 at various temperatures

    International Nuclear Information System (INIS)

    Hu Jifan; Qin Hongwei; Niu Hongdong; Zhu Luming; Chen Juan; Xiao Weiwei; Pei Yu

    2003-01-01

    In the present work, the magnetoimpedance (MI) effect for the manganite La 2/3 Ba 1/3 MnO 3 at various temperatures was reported. At a lower frequency such as f=100 kHz, the metal-insulator transition temperature T MI deduced from the peak in the temperature dependence of the AC impedance Z is very close to the value obtained from the DC resistance case, meanwhile there exists a peak of the MI ΔZ/Z 0 near the T MI . Similar to the case of DC colossal magnetoresistance effect, the T MI in MI effect can be shifted to a high temperature under application of a DC field. At a higher frequency such as f=23 MHz, a valley of the impedance Z dominated by the term of the reactance X occurs at the T MI , which can be moved by a field. The impedance Z increases with increasing AC frequency due to the skin effect. The variation of the resistance R with AC frequency strongly depends on the temperature. Below the T MI , the R increases with frequency. Above the T MI , with increasing AC frequency the R increases slightly at first, undergoes a valley, and finally increases again. Our present results imply that the interplay between the double-exchange effect and the electron-phonon coupling may also involve in the MI effect of the manganites, in addition to the variation of penetration depth via the permeability and conductivity under the application of DC fields

  19. Effect of high pressure on the ground state of low doped manganite: a neutron diffraction and transport property study

    International Nuclear Information System (INIS)

    Ghosh, Barnali; Raychaudhuri, A.K.; Siruguri, V.; Chatterji, Tapan; Thomas, Hansen; Mukovskii, Ya.M.

    2013-01-01

    Depending on the doping level x the hole-doped perovskite manganites, like La 1-x Ca x MnO 3 exhibit a wide variety of physical properties. These compounds lead their high sensitivity to thermodynamic variables like temperature, magnetic field and pressure. The structure can be modified by application of high pressure and it can be quantitative that changes the Mn-O bond length and increases the Mn-O-Mn bond angle. In some cases the pressure can bring about qualitative changes in the structure like change in the lattice structure or its symmetry. These structural factors can contribute to the effective electron transfer integral between Mn ions, which in turn can change the magnetic exchanges like the double-exchange as well as the super exchange. For low hole doping (0.15 ≤ x ≤ 0.2), the low temperature ground state is Ferromagnetic insulator (FMI). The ground state of the low doped manganite La 0.79 Ca 0.21 MnO 3 (LCMO) can be destabilized by external hydrostatic pressure. We have done electrical transport measurement under magnetic field and under high pressure for understanding the nature of the resulting phase(s) that arise from the applied hydrostatic pressure. We find that the metallic phase so created under pressure has no appreciable magnetoresistance (MR). The Neutron powder diffraction measurement done on D20 diffractometer (λ=1.3Å) at ILL, Grenoble, France under high hydrostatic pressure up to 10GPa shows that the pressure leads to a change in the crystal structure from orthorhombic to rhombohedral and leading to a change in magnetic structure also; and most importantly collapse of the magnetic moment to a low value that leads to absence of any MR under pressure induced metallization. (author)

  20. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  1. High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film

    Directory of Open Access Journals (Sweden)

    Kurlyandskaya, G. V.

    2000-08-01

    Full Text Available A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å three-layered film done by rf diode sputtering. Stable recording and readout processes were available for 32 rectangular element column, where each element had μm dimensions convenient to fabricate memory chip with 106 bits capacity. Rectangles of different sizes with removed corners were used in order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic memory device have been comparatively analysed. We suggest that the decrease of the absolute value of the magnetoimpedance of the memory device comes from the reduction of the real part via the magnetoresistance.

    Se ha diseñado un dispositivo de memoria para la grabación y lectura de información basado en el efecto de la anisotropía magnetorresistiva de una multicapa fabricada por sputtering mediante diodo de rf. El elemento de memoria se compone de tres películas delgadas, de composición Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å. El dispositivo permite procesos de grabación y lectura estables, y se compone de 32 elementos de memoria rectangulares por columna, donde cada elemento tiene dimensiones de μm lo que permite la fabricación de memorias integradas con capacidades del orden de 106 bits. Se han ensayado elementos de memoria rectangulares de diferentes tamaños, con las esquinas redondeadas con objeto de conseguir procesos de lectura-escritura lo más estable posible. Se han analizado comparativamente los efectos de magnetorresistencia y magnetoimpedancia de los elementos de memoria de diferentes dimensiones. Sugerimos que la disminución del valor absoluto de la magnetoimpedancia del elemento de memoria es consecuencia de la reducción de la parte real, de origen magnetorresistivo.

  2. Reversibility of magnetic field driven transition from electronic phase separation state to single-phase state in manganites: A microscopic view

    Science.gov (United States)

    Liu, Hao; Lin, Lingfang; Yu, Yang; Lin, Hanxuan; Zhu, Yinyan; Miao, Tian; Bai, Yu; Shi, Qian; Cai, Peng; Kou, Yunfang; Lan, Fanli; Wang, Wenbin; Zhou, Xiaodong; Dong, Shuai; Yin, Lifeng; Shen, Jian

    2017-11-01

    Electronic phase separation (EPS) is a common phenomenon in strongly correlated oxides. For colossal magnetoresistive (CMR) manganites, the EPS is so pronounced that not only does it govern the CMR behavior, but also raises a question whether EPS exists as a ground state for systems or a metastable state. While it has been well known that a magnetic field can drive the transition of the EPS state into a single-phase state in manganites, the reversibility of this transition is not well studied. In this work we use magnetic force microscopy (MFM) to directly visualize the reversibility of the field driven transition between the EPS state and the single-phase state at different temperatures. The MFM images correspond well with the global magnetic and transport property measurements, uncovering the underlying mechanism of the field driven transition between the EPS state and the single-phase state. We argue that EPS state is a consequence of system quenching whose response to an external magnetic field is governed by a local energy landscape.

  3. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  4. Modeling the planar configuration of extraordinary magnetoresistance

    International Nuclear Information System (INIS)

    El-Ahmar, S; Pozniak, A A

    2015-01-01

    Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

  5. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  6. Microstructural and electrical changes in nickel manganite powder induced by mechanical activation

    International Nuclear Information System (INIS)

    Savic, S.M.; Mancic, L.; Vojisavljevic, K.; Stojanovic, G.; Brankovic, Z.; Aleksic, O.S.; Brankovic, G.

    2011-01-01

    Highlights: → The influence of mechanical activation on microstructure evolution in the nickel manganite powder was investigated as well as electrical properties of the sintered samples. → Structural refinement obtained by Topas-Academic software based on Rietveld analysis showed that the milling process remarkably changed the powder morphology and microstructure. → SEM studies of sintered samples also revealed the strong influence of milling time on ceramics density (increases with milling time). → The electrical properties of ceramic samples are clearly conditioned by terms of synthesis, in our case the time of mechanical activation. → The highest density and higher values of dielectric constant were achieved at the sample activated for 45 min. -- Abstract: Nickel manganite powder synthesized by calcination of a stoichiometric mixture of manganese and nickel oxide was additionally mechanically activated in a high energy planetary ball mill for 5-60 min in order to obtain a pure NiMn 2 O 4 phase. The as-prepared powders were uniaxially pressed into disc shape pellets and then sintered for 60 min at 1200 o C. Changes in the particle morphology induced by mechanical activation were monitored using scanning electron microscopy, while changes in powder structural characteristics were followed using X-ray powder diffraction. The ac impedance spectroscopy was performed on sintered nickel manganite samples at 25 o C, 50 o C and 80 o C. It was shown that mechanical activation intensifies transport processes causing a decrease in the average crystallites size, while longer activation times can lead to the formation of aggregates, defects and increase of lattice microstrains. The observed changes in microstructures were correlated with measured electrical properties in order to define optimal processing conditions.

  7. Microstructural and electrical changes in nickel manganite powder induced by mechanical activation

    Energy Technology Data Exchange (ETDEWEB)

    Savic, S.M., E-mail: slavicas@cms.bg.ac.rs [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia); Mancic, L. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Vojisavljevic, K. [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia); Stojanovic, G. [Faculty of Technical Sciences University of Novi Sad, Trg Dositeja Obradovica 6, 21000 Novi Sad (Serbia); Brankovic, Z.; Aleksic, O.S.; Brankovic, G. [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia)

    2011-07-15

    Highlights: {yields} The influence of mechanical activation on microstructure evolution in the nickel manganite powder was investigated as well as electrical properties of the sintered samples. {yields} Structural refinement obtained by Topas-Academic software based on Rietveld analysis showed that the milling process remarkably changed the powder morphology and microstructure. {yields} SEM studies of sintered samples also revealed the strong influence of milling time on ceramics density (increases with milling time). {yields} The electrical properties of ceramic samples are clearly conditioned by terms of synthesis, in our case the time of mechanical activation. {yields} The highest density and higher values of dielectric constant were achieved at the sample activated for 45 min. -- Abstract: Nickel manganite powder synthesized by calcination of a stoichiometric mixture of manganese and nickel oxide was additionally mechanically activated in a high energy planetary ball mill for 5-60 min in order to obtain a pure NiMn{sub 2}O{sub 4} phase. The as-prepared powders were uniaxially pressed into disc shape pellets and then sintered for 60 min at 1200 {sup o}C. Changes in the particle morphology induced by mechanical activation were monitored using scanning electron microscopy, while changes in powder structural characteristics were followed using X-ray powder diffraction. The ac impedance spectroscopy was performed on sintered nickel manganite samples at 25 {sup o}C, 50 {sup o}C and 80 {sup o}C. It was shown that mechanical activation intensifies transport processes causing a decrease in the average crystallites size, while longer activation times can lead to the formation of aggregates, defects and increase of lattice microstrains. The observed changes in microstructures were correlated with measured electrical properties in order to define optimal processing conditions.

  8. Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

    KAUST Repository

    Ding, Junfeng; Cossu, Fabrizio; Lebedev, Oleg I.; Zhang, Yuqin; Zhang, Zhidong; Schwingenschlö gl, Udo; Wu, Tao

    2016-01-01

    magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a

  9. Microstructural, magnetic and transport properties of La{sub 0.5}Pr{sub 0.2}Pb{sub 0.3-x}Sr{sub x}MnO{sub 3} manganites

    Energy Technology Data Exchange (ETDEWEB)

    Craus, M.-L., E-mail: kraus@nf.jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); National Institute of Research and Development for Technical Physics, Iasi (Romania); Islamov, A.Kh., E-mail: islamov@nf.jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); Laboratory of Advanced Research of Membrane Proteins, Moscow Institute of Physics and Technology, Dolgoprudniy (Russian Federation); Anitas, E.M., E-mail: anitas@theor.jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); Horia Hulubei National Institute of Physics and Nuclear Engineering, Bucharest-Magurele (Romania); Cornei, N., E-mail: ncornei@uaic.ro [“Al. I. Cuza” University, Chemistry Department, Iasi (Romania); Luca, D., E-mail: dluca@tuiasi.ro [“Gh. Asachi” Technical University, Faculty of Materials Science and Engineering, Iasi (Romania)

    2014-04-01

    manganites with x=0.05 and x=0.15 have large intrinsic resistance maxima, generating an important magnetoresistance effect.

  10. Magnetoresistive multilayers deposited on the AAO membranes

    International Nuclear Information System (INIS)

    Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

    2005-01-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si

  11. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  12. On-Chip Magnetic Bead Manipulation and Detection Using a Magnetoresistive Sensor-Based Micro-Chip: Design Considerations and Experimental Characterization

    KAUST Repository

    Gooneratne, Chinthaka Pasan; Kodzius, Rimantas; Li, Fuquan; Foulds, Ian G.; Kosel, Jü rgen

    2016-01-01

    The remarkable advantages micro-chip platforms offer over cumbersome, time-consuming equipment currently in use for bio-analysis are well documented. In this research, a micro-chip that includes a unique magnetic actuator (MA) for the manipulation of superparamagnetic beads (SPBs), and a magnetoresistive sensor for the detection of SPBs is presented. A design methodology, which takes into account the magnetic volume of SPBs, diffusion and heat transfer phenomena, is presented with the aid of numerical analysis to optimize the parameters of the MA. The MA was employed as a magnetic flux generator and experimental analysis with commercially available COMPEL™ and Dynabeads® demonstrated the ability of the MA to precisely transport a small number of SPBs over long distances and concentrate SPBs to a sensing site for detection. Moreover, the velocities of COMPEL™ and Dynabead® SPBs were correlated to their magnetic volumes and were in good agreement with numerical model predictions. We found that 2.8 μm Dynabeads® travel faster, and can be attracted to a magnetic source from a longer distance, than 6.2 μm COMPEL™ beads at magnetic flux magnitudes of less than 10 mT. The micro-chip system could easily be integrated with electronic circuitry and microfluidic functions, paving the way for an on-chip biomolecule quantification device

  13. On-Chip Magnetic Bead Manipulation and Detection Using a Magnetoresistive Sensor-Based Micro-Chip: Design Considerations and Experimental Characterization

    KAUST Repository

    Gooneratne, Chinthaka Pasan

    2016-08-26

    The remarkable advantages micro-chip platforms offer over cumbersome, time-consuming equipment currently in use for bio-analysis are well documented. In this research, a micro-chip that includes a unique magnetic actuator (MA) for the manipulation of superparamagnetic beads (SPBs), and a magnetoresistive sensor for the detection of SPBs is presented. A design methodology, which takes into account the magnetic volume of SPBs, diffusion and heat transfer phenomena, is presented with the aid of numerical analysis to optimize the parameters of the MA. The MA was employed as a magnetic flux generator and experimental analysis with commercially available COMPEL™ and Dynabeads® demonstrated the ability of the MA to precisely transport a small number of SPBs over long distances and concentrate SPBs to a sensing site for detection. Moreover, the velocities of COMPEL™ and Dynabead® SPBs were correlated to their magnetic volumes and were in good agreement with numerical model predictions. We found that 2.8 μm Dynabeads® travel faster, and can be attracted to a magnetic source from a longer distance, than 6.2 μm COMPEL™ beads at magnetic flux magnitudes of less than 10 mT. The micro-chip system could easily be integrated with electronic circuitry and microfluidic functions, paving the way for an on-chip biomolecule quantification device

  14. On-Chip Magnetic Bead Manipulation and Detection Using a Magnetoresistive Sensor-Based Micro-Chip: Design Considerations and Experimental Characterization

    Directory of Open Access Journals (Sweden)

    Chinthaka P. Gooneratne

    2016-08-01

    Full Text Available The remarkable advantages micro-chip platforms offer over cumbersome, time-consuming equipment currently in use for bio-analysis are well documented. In this research, a micro-chip that includes a unique magnetic actuator (MA for the manipulation of superparamagnetic beads (SPBs, and a magnetoresistive sensor for the detection of SPBs is presented. A design methodology, which takes into account the magnetic volume of SPBs, diffusion and heat transfer phenomena, is presented with the aid of numerical analysis to optimize the parameters of the MA. The MA was employed as a magnetic flux generator and experimental analysis with commercially available COMPEL™ and Dynabeads® demonstrated the ability of the MA to precisely transport a small number of SPBs over long distances and concentrate SPBs to a sensing site for detection. Moreover, the velocities of COMPEL™ and Dynabead® SPBs were correlated to their magnetic volumes and were in good agreement with numerical model predictions. We found that 2.8 μm Dynabeads® travel faster, and can be attracted to a magnetic source from a longer distance, than 6.2 μm COMPEL™ beads at magnetic flux magnitudes of less than 10 mT. The micro-chip system could easily be integrated with electronic circuitry and microfluidic functions, paving the way for an on-chip biomolecule quantification device.

  15. Structure and magnetoresistive properties of current-perpendicular-to-plane pseudo-spin valves using polycrystalline Co2Fe-based Heusler alloy films

    International Nuclear Information System (INIS)

    Nakatani, T.M.; Du, Ye; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

    2013-01-01

    We report current-perpendicular-to-plane giant magnetoresistance (CPP–GMR) of pseudo-spin valves (PSVs) with polycrystalline Co 2 Fe(Al 0.5 Si 0.5 ) (CFAS) and Co 2 Fe(Ga 0.5 Ge 0.5 ) (CFGG) Heusler alloy films. Strongly [0 1 1] textured polycrystalline Heusler alloy films grew on the Ta/Ru/Ag underlayer. Relatively large CPP–GMR values of ΔRA up to 4 mΩ μm 2 and ΔR/R up to 10% were obtained with 5 nm thick Heusler alloy films and Ag spacer layer by annealing CFAS PSV at 450 °C and CFGG PSV at 350 °C. Transmission electron microscopy revealed a flat and sharp interface between the [0 1 1] textured CFAS layers and the [1 1 1] textured Ag spacer layer. Annealing above an optimal temperature for each PSV led to reductions in MR values as a result of the thickening of the spacer layer induced by the Ag diffusion from the outer Ag layers

  16. Magneto-caloric and magneto-resistive properties of La{sub 0.67}Ca{sub 0.33-x}Sr{sub x}MnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Reves Dinesen, Anders

    2004-08-01

    This thesis presents results of an experimental investigation of magneto-caloric and magneto-resistive properties of a series of polycrystalline Ca- and Sr-doped lanthanum manganites, La{sub 0.67}Ca{sub 0.33-x}Sr{sub x}MnO{sub 3} (0{<=} x {<=} 0.33), with the perovskite structure. The samples consisted of sintered oxide powders prepared the glycine-nitrate combustion technique. The compounds were ferromagnetic and showed a Curie transition in the temperature range 267370 K (T{sub C} increased with increasing x). An analysis of the structural properties was carried out by means of x-ray diffraction and the Rietveld technique. The variation of the Ca/Sr ratio was found to cause a transition from orthorhombic to rhombohedral symmetry in the composition range 0.110 < x < 0.165. The analysis suggested a strong correlation between structural properties and magnetism, for instance a relationship between the mean MnOMn bond angle and the Curie temperature. The MnOMn bonds mediate ferromagnetism and electrical transport in these materials via the double-exchange mechanism. The magnetocaloric effect of the La{sub 0.67}Ca{sub 0.33-x}Sr{sub x}MnO{sub 3} samples was measured directly and indirectly (by means of magnetization measurements). All the samples showed a magnetocaloric effect in the vicinity of T{sub C}. A model for the mag-netocaloric effect based on Weiss mean field theory and classical theories for heat capacities was developed. The model provided reasonable predictions of the magneto-caloric properties of the samples. The compounds with low Sr content showed a magnetocaloric effect comparable to that of Gadolinium, the prototypical working material for magnetic refrigeration at room temperature. A less comprehensive part of the investigation regarded the magneto-resistive properties of the La{sub 0.67}Ca{sub 0.33-x}Sr{sub x}MnO{sub 3} system. It was found that th polycrystalline nature of the compounds played a decisive role for the magnetotransport properties

  17. Phase shift of oscillatory magnetoresistance in a double-cross thin film structure of La0.3Pr0.4Ca0.3MnO3 via strain-engineered elongation of electronic domains

    Science.gov (United States)

    Alagoz, H. S.; Prasad, B.; Jeon, J.; Blamire, M. G.; Chow, K. H.; Jung, J.

    2018-02-01

    The subtle balance between the competing electronic phases in manganites due to complex interplay between spin, charge, and orbital degrees of freedom could allow one to modify the properties of electronically phase separated systems. In this paper, we show that the phase shift in the oscillatory magnetoresistance ρ (θ ) can be modified by engineering strain driven elongation of electronic domains in La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin films. Strain-driven elongation of magnetic domains can produce different percolation paths and hence different anisotropic magnetoresistance responses. This tunability provides a unique control that is unattainable in conventional 3 d ferromagnetic metals and alloys.

  18. Giant magnetoresistance through a single molecule.

    Science.gov (United States)

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  19. Transport-entropy correlations in La0.7Ca0.3MnO3 manganite

    International Nuclear Information System (INIS)

    Debnath, J.C.; Strydom, A.M.

    2014-01-01

    An investigation of the magnetic entropy change ΔS M and resistivity ρ, and the relation between them, for La 0.7 Ca 0.3 MnO 3 (LCMO) material has been presented. By using an equation of the form ΔS M =−α∫ 0 H [(δln(ρ))/(δT) ] H dH (α=9.98 emu/g), which relates magnetic order to transport behavior of the compounds, we measure the magnetic entropy change ΔS M from the resistivity measurement, where the resistivity results agree quite well with the fitting parameter α=9.98 emu/g in the intermediate temperature range. This result reveals the predominant role of magnetic polarons on the magnetoresistive property of manganites. It is obvious that magnetic disorder, characterized by ΔS M , affects the magnetic polarons, while the magnetic polarons influence the electronic transport properties, which may be the underlying reason for a salient ΔS M −ρ relation. It also provides an alternative method to determine magnetic entropy change on the basis of resistive measurements

  20. Extreme magnetoresistance in magnetic rare-earth monopnictides

    Science.gov (United States)

    Ye, Linda; Suzuki, Takehito; Wicker, Christina R.; Checkelsky, Joseph G.

    2018-02-01

    The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe2 and rare-earth monopnictide La(Sb,Bi), these systems tend to be nonmagnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of 1.6 ×106% at fields of 9 T whereas the magnetoresistance itself is nonmonotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with fields above magnetic ordering temperature TN. The magnitude of the XMR is larger than in other rare-earth monopnictides including the nonmagnetic members and follows a nonsaturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare-earth-based correlated topological materials.

  1. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  2. Multiferroic nature of charge-ordered rare earth manganites

    International Nuclear Information System (INIS)

    Serrao, Claudy Rayan; Sundaresan, A; Rao, C N R

    2007-01-01

    Charge-ordered rare earth manganites Nd 0.5 Ca 0.5 MnO 3 ,La 0.25 Nd 0.25 Ca 0.5 MnO 3 , Pr 0.7 Ca 0.3 MnO 3 and Pr 0.6 Ca 0.4 MnO 3 are found to exhibit dielectric constant anomalies around the charge-ordering or the antiferromagnetic transition temperatures. Magnetic fields have a marked effect on the dielectric properties, indicating the presence of coupling between the magnetic and electrical order parameters. The observation of magnetoferroelectricity in these manganites is in accord with the recent theoretical predictions of Khomskii and co-workers

  3. Multiferroic nature of charge-ordered rare earth manganites

    Energy Technology Data Exchange (ETDEWEB)

    Serrao, Claudy Rayan [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore-560064 (India); Sundaresan, A [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore-560064 (India); Rao, C N R [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore-560064 (India)

    2007-12-12

    Charge-ordered rare earth manganites Nd{sub 0.5}Ca{sub 0.5}MnO{sub 3},La{sub 0.25}Nd{sub 0.25}Ca{sub 0.5}MnO{sub 3}, Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} and Pr{sub 0.6}Ca{sub 0.4}MnO{sub 3} are found to exhibit dielectric constant anomalies around the charge-ordering or the antiferromagnetic transition temperatures. Magnetic fields have a marked effect on the dielectric properties, indicating the presence of coupling between the magnetic and electrical order parameters. The observation of magnetoferroelectricity in these manganites is in accord with the recent theoretical predictions of Khomskii and co-workers.

  4. Synthesis of calcium doped lanthanum manganite by mechanosynthesis

    International Nuclear Information System (INIS)

    Bolarin, A.M.; Sanchez, F.; Palomares, S.; Aguilar, J.A.; Torres-Villasenor, G.

    2007-01-01

    Lanthanum manganite doped with calcium, Ca 1/3 La 2/3 MnO 3-δ , was prepared by a high-energy ball milling. The precursors used were Mn 2 O 3 , La 2 O 3 and CaO, mixed in the stoichiometric ratio to obtain this manganite. The mechano-chemical process was performed at room temperature in a SPEX 8000D mixer/mill, using hardened steel balls and stainless steel vials, in air atmosphere. X-ray diffraction was used to elucidate the phase transformation as a function of the milling time. The Rietveld refinement was used in order to characterize structurally the manganites. The morphology and particle size of powder compound obtained were characterized by scanning electron microscope. The particle size of this powder material was measured with zeta size analyzer, and selected area electron diffraction (SAED) from TEM was used to elucidate the crystalline structure of this powder compound. The results showed that it is possible to obtain calcium doped lanthanum manganite by mechano-synthesis, using a weight ratio of ball to powder of 12:1, after 3 h of milling. The evolution of the phase transformation during the milling time is reported. Increases in milling time produce exponential decrease in the particle size, up to 680 nm after 1 h of milling. After the milling process it is obtained a powder compound with an orthorhombic structure (S.G. Pbnm). A prolonged milling time (>9 h) produce an important reduction in the particle size but this is accompanied with a high iron contamination caused by metallic residues originated from vial and balls and also, after 9 h of milling time, it was found an important distortion in orthorhombic structure, obtaining two types of parameters

  5. Electrical behaviour of strontium-doped lanthanum manganite interfaces

    DEFF Research Database (Denmark)

    Koch, Søren; Hendriksen, P.V.; Jacobsen, Torben

    2005-01-01

    The contact resistance of strontium-doped lanthanum manganite (LSM) contact pairs is investigated by polarisation analysis at different temperatures and atmospheres. The ceramic contacts have a high contact resistance, and strongly nonlinear current–voltage behaviour is observed at low temperatur....... The nonlinear behaviour is ascribed to the presence of energy barriers at the contact interface. Generally, point contacts showed a more linear behaviour than plane contact interfaces....

  6. Effect of pressure on the magnetic properties of lanthanum manganite

    International Nuclear Information System (INIS)

    Gonchar', L. E.; Leskova, Yu. V.; Nikiforov, A. E.; Kozlenko, D. P.

    2010-01-01

    The crystalline structure of pure lanthanum manganite under external hydrostatic pressure has been studied. The behavior of magnetic properties and nuclear magnetic resonance (NMR) spectra under these conditions is theoretically predicted. It is shown that an increase in the Neel temperature with pressure is not only caused by the general contraction of the crystal, but is also related to certain peculiarities in the baric behavior of the orbital structure.

  7. Tunnelling anisotropic magnetoresistance at La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces

    International Nuclear Information System (INIS)

    Phillips, L. C.; Yan, W.; Kar-Narayan, S.; Mathur, N. D.; Lombardo, A.; Barbone, M.; Milana, S.; Ferrari, A. C.; Ghidini, M.; Hämäläinen, S. J.; Dijken, S. van

    2016-01-01

    Using ferromagnetic La_0_._6_7Sr_0_._3_3MnO_3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

  8. Anisotropic strains and magnetoresistance of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Koo, T.Y.; Park, S.H.; Lee, K.; Jeong, Y.H.

    1997-01-01

    Thin films of perovskite manganite La 0.7 Ca 0.3 MnO 3 were grown epitaxially on SrTiO 3 (100), MgO(100) and LaAlO 3 (100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO 3 , MgO, and LaAlO 3 , respectively, while the unit cell of the bulk is cubic. It is found that the samples with a cubic unit cell show smaller peak magnetoresistance at low fields (approx-lt 1T) than the noncubic ones do. The present result demonstrates that the magnetoresistance of La 0.7 Ca 0.3 MnO 3 at low fields can be controlled by lattice distortion via externally imposed strains. copyright 1997 American Institute of Physics

  9. Engineering magnetism at functional oxides interfaces: manganites and beyond.

    Science.gov (United States)

    Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

    2017-11-08

    The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

  10. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Brown, P; Beek, T; Carr, C; O’Brien, H; Cupido, E; Oddy, T; Horbury, T S

    2012-01-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz −1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm 3 , respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  11. Noncontact vibration measurements using magnetoresistive sensing elements

    Science.gov (United States)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  12. Huge magnetoresistance effect of highly oriented pyrolytic graphite

    International Nuclear Information System (INIS)

    Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu

    2004-01-01

    Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition

  13. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  14. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  15. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  16. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  17. Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films

    Science.gov (United States)

    Balevičius, Saulius; Tornau, Evaldas E.; ŽurauskienÄ--, Nerija; Stankevič, Voitech; Šimkevičius, Česlovas; TolvaišienÄ--, Sonata; PlaušinaitienÄ--, Valentina; Abrutis, Adulfas

    2017-12-01

    We present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4-8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.

  18. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  19. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  20. On the magnetoresistance of heavy fermion compounds

    International Nuclear Information System (INIS)

    Lee Chengchung; Chen Chung

    1992-09-01

    Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs

  1. Nonuniversal scaling of the magnetocaloric effect as an insight into spin-lattice interactions in manganites

    DEFF Research Database (Denmark)

    Smith, Anders; Nielsen, Kaspar Kirstein; Neves Bez, Henrique

    2016-01-01

    is not given uniquely by the critical exponents of the ferromagnetic-paramagnetic phase transition, i.e., the scaling is nonuniversal. A theoretical description based on the Bean-Rodbell model and taking into account compositional inhomogeneities is shown to be able to account for the observed field dependence....... In this way the determination of the nonuniversal field dependence of the magnetocaloric effect close to a phase transition can be used as a method to gain insight into the strength of the spin-lattice interactions of magnetic materials. The approach is shown also to be applicable to first-order transitions.......We measure the magnetocaloric effect of the manganite series La0.67Ca0.33-xSrxMnO3 by determining the isothermal entropy change upon magnetization, using variable-field calorimetry. The results demonstrate that the field dependence of the magnetocaloric effect close to the critical temperature...

  2. Magnetically induced electrical transport and dielectric properties of 3d transition elemental substitution at the Mn-site in Nd0.67Ba0.33MnO3 manganites

    Science.gov (United States)

    Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

    2018-05-01

    We have investigated the temperature dependence of electrical transport and dielectric properties along with magnetoresistance and magneto dielectric behavior in Nd0.67Ba0.33Mn0.9TR0.1O3 (TR= Cr, Fe, Co, Ni, Cu) manganites. All the compounds crystallized into an orthorhombic structure with Imma space group. Nd0.67Ba0.33MnO3 shows insulating to metallic behavior at intermediate temperatures, but, with the substitution of transitional elements it shows insulating in nature, down to lowest temperature measured for all the compounds. Dielectric measurement shows the intrinsic behavior of these lossy materials. A large value of magneto resistance is obtained for all the compounds and considerable amount of magneto-dielectric effect is shown for all the substituted compounds at lower temperatures.

  3. High Field Linear Magnetoresistance Sensors with Perpendicular Anisotropy L10-FePt Reference Layer

    Directory of Open Access Journals (Sweden)

    X. Liu

    2016-01-01

    Full Text Available High field linear magnetoresistance is an important feature for magnetic sensors applied in magnetic levitating train and high field positioning measurements. Here, we investigate linear magnetoresistance in Pt/FePt/ZnO/Fe/Pt multilayer magnetic sensor, where FePt and Fe ferromagnetic layers exhibit out-of-plane and in-plane magnetic anisotropy, respectively. Perpendicular anisotropy L10-FePt reference layer with large coercivity and high squareness ratio was obtained by in situ substrate heating. Linear magnetoresistance is observed in this sensor in a large range between +5 kOe and −5 kOe with the current parallel to the film plane. This L10-FePt based sensor is significant for the expansion of linear range and the simplification of preparation for future high field magnetic sensors.

  4. Two-dimensional salt and temperature DNA denaturation analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Dufva, Martin; Hansen, Mikkel Fougt

    2017-01-01

    We present a microfluidic system and its use to measure DNA denaturation curves by varying the temperature or salt (Na+) concentration. The readout is based on real-time measurements of DNA hybridization using magnetoresistive sensors and magnetic nanoparticles (MNPs) as labels. We report the first...... melting curves of DNA hybrids measured as a function of continuously decreasing salt concentration at fixed temperature and compare them to the corresponding curves obtained vs. temperature at fixed salt concentration. The magnetoresistive sensor platform provided reliable results under varying....... The results demonstrate that concentration melting provides an attractive alternative to temperature melting in on-chip DNA denaturation experiments and further show that the magnetoresistive platform is attractive due to its low cross-sensitivity to temperature and liquid composition....

  5. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  6. Recovery of oscillatory magneto-resistance in phase separated La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Alagoz, H. S.; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H.; Jung, J.; Prasad, B.; Egilmez, M.

    2013-01-01

    In-plane angular dependent magneto-resistance has been studied in La 0.3 Pr 0.4 Ca 0.3 MnO 3 (LPCMO) manganite thin films deposited on the (100) oriented NdGaO 3 , and (001) oriented SrTiO 3 and LaAlO 3 substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos 2 θ/sin 2 θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity

  7. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  8. Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm(0.5)Ca(0.5)MnO(3) films.

    Science.gov (United States)

    Chen, Y Z; Sun, J R; Zhao, J L; Wang, J; Shen, B G; Pryds, N

    2009-11-04

    We investigated the structure and magnetotransport properties of Sm(0.5)Ca(0.5)MnO(3) (SCMO) films epitaxially grown on (011)-oriented SrTiO(3) substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ∼1000 in the colossal magnetoresistance (CMR) effect was observed in the films with a thickness between 50 and 80 nm, which was distinctly different from the basically isotropic CMR effect in bulk SCMO. The large anisotropy in the CMR can be ascribed to the intrinsic asymmetric strain in the film, which plays an important role in tuning the spin-orbit coupling in manganite films. The origin of the peculiar CMR effect is discussed.

  9. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  10. Temperature dependence of non-Debye disorder in doped manganites

    International Nuclear Information System (INIS)

    Meneghini, C.; Cimino, R.; Pascarelli, S.; Mobilio, S.; Raghu, C.; Sarma, D.D.

    1997-01-01

    Ca-doped manganite La 1-x Ca x MnO 3 samples with x=0.2 and 0.4 were investigated by extended x-ray absorption fine structure (EXAFS) as a function of temperature and preparation method. The samples exhibit characteristic resistivity change across the metal-insulator (MI) transition temperature whose shape and position depend on Ca-doping concentration and sample thermal treatment. EXAFS results evidenced an increase of nonthermal disorder at the MI transition temperature which is significantly correlated with the resistivity behavior. copyright 1997 The American Physical Society

  11. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  12. Topological dynamics of vortex-line networks in hexagonal manganites

    Science.gov (United States)

    Xue, Fei; Wang, Nan; Wang, Xueyun; Ji, Yanzhou; Cheong, Sang-Wook; Chen, Long-Qing

    2018-01-01

    The two-dimensional X Y model is the first well-studied system with topological point defects. On the other hand, although topological line defects are common in three-dimensional systems, the evolution mechanism of line defects is not fully understood. The six domains in hexagonal manganites converge to vortex lines in three dimensions. Using phase-field simulations, we predicted that during the domain coarsening process, the vortex-line network undergoes three types of basic topological changes, i.e., vortex-line loop shrinking, coalescence, and splitting. It is shown that the vortex-antivortex annihilation controls the scaling dynamics.

  13. Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

    2016-07-01

    We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

  14. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  15. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature c = 250 K. The ZFC ...

  16. Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (1 1 0) substrates

    International Nuclear Information System (INIS)

    Tang, Y.L.; Zhu, Y.L.; Meng, H.; Zhang, Y.Q.; Ma, X.L.

    2012-01-01

    Nd 0.45 Sr 0.55 MnO 3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd 0.45 Sr 0.55 MnO 3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd 0.45 Sr 0.55 MnO 3 thin films grown on SrTiO 3 (1 1 0) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd 0.45 Sr 0.55 MnO 3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both 〈1 1 1〉 and [0 0 1]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a〈1 1 0〉-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO 3 (1 1 0) and (1 1 1), which are attracting attention for their potentially new functions.

  17. Magnetoresistive ceramics. Recent progress: from basic understanding to applications

    Directory of Open Access Journals (Sweden)

    Fontcuberta, J.

    2004-06-01

    Full Text Available Magnetoresistive ceramics, based on half-metallic ferromagnetic oxides have received renewed attention in the last few years because of their possible applications. Here, we review some recent progress on the development of magnetoresistive ceramic materials such as La2/3Sr1/ 3MnO3 and Sr2FeMoO6 ceramic materials. We shall revisit their basic properties, the strategies that have been employed to understand and to improve their intrinsic properties, pushing the limits of their operation at temperatures well above room-temperature, and the development of some applications. This effort has required the contribution of a number of actors. Starting from research laboratories, it has progressively involved industries that nowadays are able to supply high quality raw-materials or to manufacture magnetoresistive components at large scale.

    Las cerámicas magnetorresistivas, basadas en óxidos semi-metálicos ferromagnéticos han recibido una renovada atención en los últimos años debido a sus posibles aplicaciones. Se revisan aquí algunos de los recientes progresos en el desarrollo de materiales cerámicos magnetorresistivos como La2/3Sr1/3MnO3 y Sr2FeMoO6. Se revisitan sus propiedades básicas, las estrategias empleadas para entender y mejorar sus propiedades intrínsecas, llevando sus límites de operación a temperaturas muy por encima de temperatura ambiente, y el desarrollo de algunas aplicaciones. Este esfuerzo ha requerido al contribución de un gran número de actores. Comenzando por laboratorios de investigación, se ha implicado progresivamente a industrias que hoy en día están capacitadas para suministrar materias primas de alta calidad o para fabricar componentes magnetorresistivos a gran escala.

  18. Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

    KAUST Repository

    Ding, Junfeng

    2016-05-04

    Emerging physical phenomena at the unit-cell-controlled interfaces of transition-metal oxides have attracted lots of interest because of the rich physics and application opportunities. This work reports a reentrant spin glass behavior with strong magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a Curie temperature of 246 K is observed in the superlattice with six-unit-cell LSMO layers, while the reference LSMO film with the same thickness shows much weaker magnetism. Furthermore, an insulator-metal transition emerges at the Curie temperature, and below the freezing temperature the superlattices can be considered as a glassy ferromagnetic insulator. These experimental results are closely related to the interfacial spin reconstruction revealed by the first-principles calculations, and the dependence of the reentrant spin glass behavior on the LSMO layer thickness is in line with the general phase diagram of a spin system derived from the infinite-range SK model. The results of this work underscore the manganite/cuprate superlattices as a versatile platform of creating artificial materials with tailored interfacial spin coupling and physical properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. The Control of Anisotropic Transport in Manganites by Stripy Domains

    Science.gov (United States)

    Ju, Changcheng; Lu, Xiaomei; Chu, Yinghao

    2014-03-01

    Epitaxial thin film acts as a significant tool to investigate novel phenomena of complex oxide systems. Extrinsic constraint1 of uniform or certain designed buffer layer strain could be easily implanted to these materials. However, the strain distribution might be quite complicated by involving micro- or nano-lattice distortions which could partially relax the strain and determine the complex phase diagrams of thin film, meanwhile introducing structural and physical inhomogeneities. In this work , we report 71° striped ferroelectric domains created in BFO can also epitaxially lock the perovskite manganites leading to the emerge of ordered structural domain. LSMO/BFO hetero-epitaxial samples are deposited by PLD. The 71° periodic striped domains and coherent growth are demonstrated by PFM and X-ray analysis. Plan-view TEM and X-ray RSM have been used to confirm the epitaxial relationships of the functional layers and IP lattice constant. Both the simulation and structural analysis demonstrate we can create a periodic ordered stripe structural domain in LSMO. And this will leave an anisotropic distribution of structural domain walls which makes it possible to capture the anisotropic tunneling for strong electron-lattice coupling in manganites. Temperature-dependent resistivity measurements reveal a substantial anisotropic resistivities and a remarkable shift of the MI transition between the perpendicular and parallel to the stripe domain directions.

  20. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

  1. On the role of minority carriers in the frequency dependence of organic magnetoresistance

    NARCIS (Netherlands)

    Janssen, Paul; Wagemans, W.; Verhoeven, Wouter; van der Heijden, E.H.M.; Kemerink, M.; Koopmans, B.

    2011-01-01

    In this work we investigate the frequency dependence of organic magnetoresistance (OMAR) both in small molecule-based (Alq3) and polymer (PPV derivative) materials, and investigate its thickness dependence. For all devices, we observed a strong decrease in magnetoconductance (MC) with increasing

  2. Strontium-90 sorption from fresh waters in the process of barium manganite modification

    International Nuclear Information System (INIS)

    Ryzhen'kov, A.P.; Egorov, Yu.V.

    1995-01-01

    Strontium-90 extraction by barium manganite from fresh water (natural non-salty water in open ponds) may be increased adding to the solution the sulfate anion containing reagents that modify a sorbent and chemically bind a sorbate. Heterogeneous anion-exchanging reaction of barium manganite transformation into barium sulfate-manganese dioxide and simultaneous coprecipitation of strontium sulfate (microelement) occur as a result of it. 9 refs., 4 figs., 1 tab

  3. Tailoring the physical properties of manganite thin films by tuning the epitaxial strain

    International Nuclear Information System (INIS)

    Zhang, P.X.; Zhang, H.; Cha, L.M.; Habermeier, H.-U.

    2003-01-01

    Through a proper choice of the mismatch between substrate and films, the physical properties of manganite thin films can be tailored We show that two types of manganite thin films of the Ruddlesden-Popper family, n=∞ and n=2, demonstrate a dramatic variation of their physical properties. It is proved that the property variation can be tuned precisely by controlling the lattice mismatch and/or the film thickness

  4. Two-phase behavior in strained thin films of hole-doped manganites

    OpenAIRE

    Biswas, Amlan; Rajeswari, M.; Srivastava, R. C.; Li, Y. H.; Venkatesan, T.; Greene, R. L.; Millis, A. J.

    1999-01-01

    We present a study of the effect of biaxial strain on the electrical and magnetic properties of thin films of manganites. We observe that manganite films grown under biaxial compressive strain exhibit island growth morphology which leads to a non-uniform distribution of the strain. Transport and magnetic properties of these films suggest the coexistence of two different phases, a metallic ferromagnet and an insulating antiferromagnet. We suggest that the high strain regions are insulating whi...

  5. Ferromagnetic domain structures and spin configurations measured in doped manganite

    DEFF Research Database (Denmark)

    He, J.Q.; Volkov, V.V.; Beleggia, Marco

    2010-01-01

    We report on measurements of the spin configuration across ferromagnetic domains in La0.325Pr0.3Ca0.375MnO3 films obtained by means of low-temperature Lorentz electron microscopy with in situ magnetizing capabilities. Due to the particular crystal symmetry of the material, we observe two sets of ...... and the crystal symmetry might affect the magnetoresistivity under an applied magnetic field in a strongly correlated electron system....

  6. Giant magnetoresistance in CrFeMn alloys

    International Nuclear Information System (INIS)

    Xu, W.M.; Zheng, P.; Chen, Z.J.

    1997-01-01

    The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)

  7. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  8. Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

    Science.gov (United States)

    Deak, James G.; Zhou, Zhimin; Shen, Weifeng

    2017-05-01

    Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

  9. Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridization.

    Science.gov (United States)

    Rakhmilevitch, David; Sarkar, Soumyajit; Bitton, Ora; Kronik, Leeor; Tal, Oren

    2016-03-09

    Molecular junctions based on ferromagnetic electrodes allow the study of electronic spin transport near the limit of spintronics miniaturization. However, these junctions reveal moderate magnetoresistance that is sensitive to the orbital structure at their ferromagnet-molecule interfaces. The key structural parameters that should be controlled in order to gain high magnetoresistance have not been established, despite their importance for efficient manipulation of spin transport at the nanoscale. Here, we show that single-molecule junctions based on nickel electrodes and benzene molecules can yield a significant anisotropic magnetoresistance of up to ∼200% near the conductance quantum G0. The measured magnetoresistance is mechanically tuned by changing the distance between the electrodes, revealing a nonmonotonic response to junction elongation. These findings are ascribed with the aid of first-principles calculations to variations in the metal-molecule orientation that can be adjusted to obtain highly spin-selective orbital hybridization. Our results demonstrate the important role of geometrical considerations in determining the spin transport properties of metal-molecule interfaces.

  10. Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    Science.gov (United States)

    Harmon, N. J.; Flatté, M. E.

    2012-02-01

    A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

  11. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  12. Magnetic phase transitions in the anion-deficient La sub 1 sub - sub x Ba sub x MnO sub 3 sub - sub x sub / sub 2 (0 <= x <= 0.50) manganites

    CERN Document Server

    Trukhanov, S V; Bushinsky, M V; Troyanchuk, I O; Szymczak, H

    2003-01-01

    The crystal structure, magnetization and electrical resistivity properties of the anion-deficient La sub 1 sub - sub x Ba sub x MnO sub 3 sub - sub x sub / sub 2 (0 = 0.03) being a mixture of antiferromagnetic and ferromagnetic phases. At x >= 0.12 competition between antiferromagnetic and ferromagnetic interactions leads to a cluster spin glass state appearance with a magnetic moment freezing temperature of approx 45 K. The dominant magnetic phase for x >= 0.22 is supposed to be antiferromagnetic. All the reduced samples are semiconductors and show considerable magnetoresistance over a wide temperature range in a magnetically ordered state. The largest magnetoresistance (approx 34% in a 9 kOe field at liquid nitrogen temperatures) is observed for an x = 0.30 sample. The magnetic phase diagram of La sub 1 sub - sub x sup 3 sup + Ba sub x sup 2 sup + Mn sup 3 sup + O sub 3 sub - sub x sub / sub 2 sup 2 sup - manganites has been established by combining the results of magnetic and electrical measurements. The r...

  13. Physical and chemical properties of calcium doped neodymium manganite

    International Nuclear Information System (INIS)

    Tikhonova, L.A.; Zhuk, P.P.; Tonoyan, A.A.; Vecher, A.A.

    1991-01-01

    Physical and chemical properties of calcium doped neodymium manganite were investigated. It was shown that structure of perovskite with O'-orthorhombic distortion was characteristic for solid solutions of Nd 1-x Ca x MnO 3 (x=0-0.5). Maximum of conductivity for samples with x=0.2 was determined. Inversion of conductivity from p- (x=0) to n-type (x=0.5) was observed in increase of concentration of calcium doped addition. Values of thermal expansion coefficient of studied solid solutions of Nd 1-x Ca x MnO 3 didn't depend on concentration of doped addition within the range 700 to 1200 K and were (9.9-11.3)·10 -6 K -1

  14. Asymmetric electroresistance of cluster glass state in manganites

    KAUST Repository

    Lourembam, James

    2014-03-31

    We report the electrostatic modulation of transport in strained Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films grown on SrTiO3 by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.

  15. Sintering and electrical properties of strontium-doped lanthanum manganite

    Energy Technology Data Exchange (ETDEWEB)

    Tarrago, Diego Pereira; Sousa, Vania Caldas de [Universidade Federal do Rio Grande do Sul (LABIOMAT/PPGEM/UFRGS), Porto Alegre, RS (Brazil). Programa de Pos-Graduacao em Engenharia de Minas, Metalurgica e de Materiais. Lab. de Biomateriais], Email: dptarrago@gmail.com; Moreno Buriel, Berta; Chinarro Martini, Eva; Jurado Egea, Jose Ramon [Consejo Superior de Investigaciones Cientificas (ICV/CSIC), Madrid (Spain). Inst. de Ceramica y Vidrio; Malfatti, Celia de Fraga [Universidade Federal do Rio Grande do Sul (LAPEC/PPGEM/UFRGS), Porto Alegre, RS (Brazil). Programa de Pos-Graduacao em Engenharia de Minas, Metalurgica e de Materiais. Lab. de Pesquisa em Corrosao

    2010-07-01

    Lanthanum strontium manganites (LSM) are potential materials for cathode applications in solid oxide fuel cells (SOFC) due to their good catalytic activity, chemical stability and compatibility with electrolyte materials in high temperatures. The sinterability of single phase La{sub 1-x}Sr{sub x}Mn{sub O3} (x=0.18) perovskite powders and the electrical properties of the resulting samples are analyzed in this study. Using a heating microscope, the powders were pressed and sintered at different pressures and temperatures, resulting in an open porosity of 33.36% when compacted at 125 MPa and sintered at 1200 degree C. Top and cross-section s canning electron microscopy (SEM) micrographs revealed interconnected pores in the sintered body and, hence, a suitable microstructure for the application. The activation energy for conductance was 0.04 eV and the tested LSM bulk started to exhibit adequate electrical properties at about 500 degree C. (author)

  16. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Science.gov (United States)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  17. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    International Nuclear Information System (INIS)

    Oyarzún, Simón; Henríquez, Ricardo; Suárez, Marco Antonio; Moraga, Luis; Kremer, Germán; Munoz, Raúl C.

    2014-01-01

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  18. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Oyarzún, Simón [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne CEDEX (France); Henríquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Suárez, Marco Antonio; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, Germán [Bachillerato, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); Munoz, Raúl C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2014-01-15

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  19. Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

    Science.gov (United States)

    Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

    2018-01-09

    The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

  20. Probing electronic phase transitions with phonons via inelastic neutron scattering: superconductivity in borocarbides, charge and magnetic order in manganites

    Energy Technology Data Exchange (ETDEWEB)

    Weber, F.

    2007-11-02

    The present thesis concentrates on the signatures of strong electron-phonon coupling in phonon properties measured by inelastic neutron scattering. The inelastic neutron scattering experiments were performed on the triple-axis spectrometers 1T and DAS PUMA at the research reactors in Saclay (France) and Munich (Germany), respectively. The work is subdivided into two separate chapters: In the first part, we report measurements of the lattice dynamical properties, i.e. phonon frequency, linewidth and intensity, of the conventional, i.e. phonon-mediated, superconductor YNi{sub 2}B{sub 2}C of the rare-earth-borocarbide family. The detailed check of theoretical predictions for these properties, which were calculated in the theory group of our institute, was one major goal of this work. We measured phonons in the normal state, i.e. T>T{sub c}, for several high symmetry directions up to 70 meV. We were able to extract the full temperature dependence of the superconducting energy gap 2{delta}(T) from our phonon scans with such accuracy that even deviations from the weak coupling BCS behaviour could be clearly observed. By measuring phonons at different wave vectors we demonstrated that phonons are sensitive to the gap anisotropy under the precondition, that different phonons get their coupling strength from different parts of the Fermi surface. In the second part, we investigated the properties of Mn-O bond-stretching phonons in the bilayer manganite La{sub 2-2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7}. At the doping level x=0.38 this compound has an ferromagnetic groundstate and exhibits the so-called colossal magnetoresistance effect in the vicinity of the Curie temperature T{sub C}. The atomic displacement patterns of the investigated phonons closely resemble possible Jahn-Teller distortions of the MnO{sub 6} octahedra, which are introduced in this compound by the Jahn-Teller active Mn{sup 3+} ions. We observed strong renormalizations of the phonon frequencies and clear peaks of

  1. Probing electronic phase transitions with phonons via inelastic neutron scattering: superconductivity in borocarbides, charge and magnetic order in manganites

    International Nuclear Information System (INIS)

    Weber, F.

    2007-01-01

    The present thesis concentrates on the signatures of strong electron-phonon coupling in phonon properties measured by inelastic neutron scattering. The inelastic neutron scattering experiments were performed on the triple-axis spectrometers 1T and DAS PUMA at the research reactors in Saclay (France) and Munich (Germany), respectively. The work is subdivided into two separate chapters: In the first part, we report measurements of the lattice dynamical properties, i.e. phonon frequency, linewidth and intensity, of the conventional, i.e. phonon-mediated, superconductor YNi 2 B 2 C of the rare-earth-borocarbide family. The detailed check of theoretical predictions for these properties, which were calculated in the theory group of our institute, was one major goal of this work. We measured phonons in the normal state, i.e. T>T c , for several high symmetry directions up to 70 meV. We were able to extract the full temperature dependence of the superconducting energy gap 2Δ(T) from our phonon scans with such accuracy that even deviations from the weak coupling BCS behaviour could be clearly observed. By measuring phonons at different wave vectors we demonstrated that phonons are sensitive to the gap anisotropy under the precondition, that different phonons get their coupling strength from different parts of the Fermi surface. In the second part, we investigated the properties of Mn-O bond-stretching phonons in the bilayer manganite La 2-2x Sr 1+2x Mn 2 O 7 . At the doping level x=0.38 this compound has an ferromagnetic groundstate and exhibits the so-called colossal magnetoresistance effect in the vicinity of the Curie temperature T C . The atomic displacement patterns of the investigated phonons closely resemble possible Jahn-Teller distortions of the MnO 6 octahedra, which are introduced in this compound by the Jahn-Teller active Mn 3+ ions. We observed strong renormalizations of the phonon frequencies and clear peaks of the intrinsic phonon linewidth near the order

  2. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  3. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  4. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  5. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    Chakraborty, B.R.; Dutta, A.K.

    1975-01-01

    The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  6. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-27

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  7. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  8. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

    2017-06-15

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  9. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    International Nuclear Information System (INIS)

    Povzner, A.A.; Volkov, A.G.

    2017-01-01

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  10. Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu, Mao-Wang; Yang, Guo-Jian

    2007-01-01

    We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device

  11. Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

    Science.gov (United States)

    Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

    2012-05-04

    In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

  12. Spin-flip induced magnetoresistance in positionally disordered organic solids.

    Science.gov (United States)

    Harmon, N J; Flatté, M E

    2012-05-04

    A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

  13. Magnetocaloric and magnetoresistive properties of La0.67Ca0.33-xSrxMnO3

    DEFF Research Database (Denmark)

    Dinesen, Anders Reves

    This thesis presents results of an experimental investigation of magneto-caloric and magnetoresistive properties of a series of polycrystalline Ca- and Sr-doped lanthanum manganites, La0.67Ca0.33-xSrxMnO3 (0=x=0.33 ), with the perovskite structure. The samples consisted of sintered oxide powders...... prepared the glycine-nitrate combustion technique. The compounds were ferromagnetic and showed a Curie transition in the temperature range 267–370 K (TC increased with increasing x). An analysis of the structural properties was carried out by means of x-ray diffraction and the Rietveld technique...... and the Curie temperature. The Mn–O–Mn bonds mediate ferromagnetism and electrical transport in these materials via the double-exchange mechanism. The magnetocaloric effect of the La0.67Ca0.33-xSrxMnO3 samples was measured directly and indirectly (by means of magnetization measurements). All the samples showed...

  14. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  15. Large magnetoresistance in intercalated Cu oxides

    OpenAIRE

    Grigoryan, L.; Furusawa, M.; Hori, H.; Tokumoto, M.

    1997-01-01

    Magnetism and electrical resistance as a function of magnetic field, temperature, and chemical composition are studied in Cu oxides intercalated with metal phthalocyanines MPc, where M is Fe or Ni, and Pc is C_H_N_. An unusually large positive magnetoresistance (MR) of ~ 1200% is observed in FePc-intercalated Bi_Sr_Ca_Cu_O_ samples with two Cu-O layers in the unit cell (n=2). The magnitude of the MR decreased to 40% and ~ 0% in the FePc-intercalated n=3 and n=4 samples, respectively, and to ~...

  16. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  17. High density submicron magnetoresistive random access memory (invited)

    Science.gov (United States)

    Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

    1999-04-01

    Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

  18. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  19. Neutron scattering studies on magnetic excitations in complex ordered manganites

    Energy Technology Data Exchange (ETDEWEB)

    Senff, D

    2007-09-15

    This thesis deals with magnetic excitations in three different Manganese oxides, single-layered LaSrMnO{sub 4}, charge- and orbital-ordered La{sub 1/2}Sr{sub 3/2}MnO{sub 4}, and multiferroic TbMnO{sub 3}, which are studied by means of inelastic neutron scattering. The properties of the first system, LaSrMnO{sub 4}, are governed by the complex interplay of orbital, spin, and lattice degrees of freedom typical for the physics of manganites. The magnetic low-temperature behavior is quite unusual, and the comprehensive analysis of the spin-wave spectrum of LaSrMnO{sub 4} suggests a heterogenous ground state with ferromagnetic orbital polarons embedded in an antiferromagnetic background. The doped system La{sub 1/2}Sr{sub 3/2}MnO{sub 4} exhibits a stable charge- and orbital-ordered state, which today is discussed very controversially, as it is of great relevance for the colossal increase of electric conductivity at the metal-insulator transition in perovskite manganites. Analyzing the spin-wave dispersion of the ordered state, we find an excellent agreement with classical predictions by Goodenough and reject a recent alternative proposal. The different strength of the ferromagnetic and antiferromagnetic exchange in the CE-type ordering leads to the conclusion that the magnetic state has to be considered as a weak AFM coupling of stable FM elements. This thesis is further supported by the thermal evolution of the ordered state, revealing anisotropic correlations and the close competition of FM and AFM correlations above the Neel transition, as well as by the doping dependence of the charge- and orbital-ordered state, which is interpreted on the basis of a different response of the magnetic system with respect to additional electrons or holes. In the orthorhombic perovskite TbMnO{sub 3} the electric polarization is closely coupled to the magnetic degrees of freedom via a complex, non-collinear magnetic ordering. Precisely characterizing the different magnon excitations

  20. Neutron scattering studies on magnetic excitations in complex ordered manganites

    International Nuclear Information System (INIS)

    Senff, D.

    2007-09-01

    This thesis deals with magnetic excitations in three different Manganese oxides, single-layered LaSrMnO 4 , charge- and orbital-ordered La 1/2 Sr 3/2 MnO 4 , and multiferroic TbMnO 3 , which are studied by means of inelastic neutron scattering. The properties of the first system, LaSrMnO 4 , are governed by the complex interplay of orbital, spin, and lattice degrees of freedom typical for the physics of manganites. The magnetic low-temperature behavior is quite unusual, and the comprehensive analysis of the spin-wave spectrum of LaSrMnO 4 suggests a heterogenous ground state with ferromagnetic orbital polarons embedded in an antiferromagnetic background. The doped system La 1/2 Sr 3/2 MnO 4 exhibits a stable charge- and orbital-ordered state, which today is discussed very controversially, as it is of great relevance for the colossal increase of electric conductivity at the metal-insulator transition in perovskite manganites. Analyzing the spin-wave dispersion of the ordered state, we find an excellent agreement with classical predictions by Goodenough and reject a recent alternative proposal. The different strength of the ferromagnetic and antiferromagnetic exchange in the CE-type ordering leads to the conclusion that the magnetic state has to be considered as a weak AFM coupling of stable FM elements. This thesis is further supported by the thermal evolution of the ordered state, revealing anisotropic correlations and the close competition of FM and AFM correlations above the Neel transition, as well as by the doping dependence of the charge- and orbital-ordered state, which is interpreted on the basis of a different response of the magnetic system with respect to additional electrons or holes. In the orthorhombic perovskite TbMnO 3 the electric polarization is closely coupled to the magnetic degrees of freedom via a complex, non-collinear magnetic ordering. Precisely characterizing the different magnon excitations allows to identify all relevant modes of the

  1. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    International Nuclear Information System (INIS)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-01-01

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  2. Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam-Toward High-Performance Magnetic Field Sensors.

    Science.gov (United States)

    Sagar, Rizwan Ur Rehman; Galluzzi, Massimiliano; Wan, Caihua; Shehzad, Khurram; Navale, Sachin T; Anwar, Tauseef; Mane, Rajaram S; Piao, Hong-Guang; Ali, Abid; Stadler, Florian J

    2017-01-18

    Here, we present the first observation of magneto-transport properties of graphene foam (GF) composed of a few layers in a wide temperature range of 2-300 K. Large room-temperature linear positive magnetoresistance (PMR ≈ 171% at B ≈ 9 T) has been detected. The largest PMR (∼213%) has been achieved at 2 K under a magnetic field of 9 T, which can be tuned by the addition of poly(methyl methacrylate) to the porous structure of the foam. This remarkable magnetoresistance may be the result of quadratic magnetoresistance. The excellent magneto-transport properties of GF open a way toward three-dimensional graphene-based magnetoelectronic devices.

  3. Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada); Prasad, B. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Egilmez, M. [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

    2013-12-02

    In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}θ/sin{sup 2}θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity.

  4. Electrical properties and granular magnetoresistance in nanomanganite

    Directory of Open Access Journals (Sweden)

    َAli Rostamnejadi

    2017-05-01

    Full Text Available In this research single phaseLa0.7(Sr 1-xBax0.3MnO3(x =0, 0.1 , 0.2 , 0.3 nanomanganite with crystalline size of 18-28 nm have been prepared by sol gel method. The structural properties have been studied using X-ray diffraction spectra with its Rietveld analysis and scaning electron microscope images. The magnetic and elctrical properties have been investigated by measuring the ac magnetic susceptibility and resistivity in the presence of magnetic fields in the range of 0-20 kOe. The obtained results from ac magnetic susceptibility show that the Curie temperture of the samples are above room temperture. The results of resistivity show that the metal-insulator phase transition temperture of and compounds are below room temperture. The resistivity of the samples strongly decreases and their magnetoresistance almost linearly increases by incrasing the applied magnetic field at different tempertures. The value of magnetoresistance for compound is 10 % and 14 % at 275 K and 200 K, and for compound is 13 %  and 27 % at 275 K and 100 K, respectively which are suitable for magnetic field sensing applications. The magneto-transport properties of nanomanganite are described in terms of spin dependent scattering of charge carriers from grain boundaries and their spin dependent tunneling between grains. 

  5. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  6. Evolution and control of the phase competition morphology in a manganite film

    Science.gov (United States)

    Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

    2015-11-01

    The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a strained phase-separated manganite film, using a home-built magnetic force microscope. Compared with the COI melting transition, this reverse transition is sharp, cooperative and martensitic-like with astonishingly unique yet diverse morphologies. The COI domains show variable-dimensional growth at different temperatures and their distribution can illustrate the delicate balance of the underlying interactions in manganites. Our findings also display how phase domain engineering is possible and how the phase competition can be tuned in a controllable manner.

  7. Non-local magnetoresistance in YIG/Pt nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  8. Resistivity dependence of magnetoresistance in Co/ZnO films.

    Science.gov (United States)

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  9. Delocalized and localized states of eg electrons in half-doped manganites.

    Science.gov (United States)

    Winkler, E L; Tovar, M; Causa, M T

    2013-07-24

    We have studied the magnetic behaviour of half-doped manganite Y0.5Ca0.5MnO3 in an extended range of temperatures by means of magnetic susceptibility, χ(T), and electron spin resonance (ESR) experiments. At high temperature the system crystallizes in an orthorhombic structure. The resistivity value, ρ ≃ 0.05 Ω cm at 500 K, indicates a metallic behaviour, while the Curie-Weiss dependence of χ(T) and the thermal evolution of the ESR parameters are very well described by a model that considers a system conformed by localized Mn(4+) cores, [Formula: see text], and itinerant, eg, electrons. The strong coupling between t2g and eg electrons results in an enhanced Curie constant and an FM Curie-Weiss temperature that overcomes the AFM interactions between the [Formula: see text] cores. A transition to a more distorted phase is observed at T ≈ 500 K and signatures of localization of the eg electrons appear in the χ(T) behaviour below 300 K. A new Curie-Weiss regime is observed, where the Curie-constant value is consistent with dimer formation. Based on mean-field calculations, the dimer formation is predicted as a function of the interaction strength between the t2g and eg electrons.

  10. Interface reconstruction with emerging charge ordering in hexagonal manganite

    Science.gov (United States)

    Xu, Changsong; Han, Myung-Geun; Bao, Shanyong; Nan, Cewen; Bellaiche, Laurent

    2018-01-01

    Multiferroic materials, which simultaneously have multiple orderings, hold promise for use in the next generation of memory devices. We report a novel self-assembled MnO double layer forming at the interface between a multiferroic YMnO3 film and a c-Al2O3 substrate. The crystal structures and the valence states of this MnO double layer were studied by atomically resolved scanning transmission electron microscopy and spectroscopy, as well as density functional theory (DFT) calculations. A new type of charge ordering has been identified within this MnO layer, which also contributes to a polarization along the [001] direction. DFT calculations further establish the occurrence of multiple couplings between charge and lattice in this novel double layer, in addition to the polarization in nearby YMnO3 single layer. The interface reconstruction reported here creates a new playground for emergent physics, such as giant ferroelectricity and strong magnetoelectric coupling, in manganite systems. PMID:29795782

  11. New type magnetoresistance in Co/Si systems

    International Nuclear Information System (INIS)

    Honda, S.; Ishikawa, T.; Takai, K.; Mitarai, Y.; Harada, H.

    2005-01-01

    The magnetoresistance (MR) properties in both the sputter-deposited Co/Si multilayers and the system consisting of Co evaporated on the anodized Si have been examined. In the Co/Si multilayers, at room temperature both the sharp ordinary magnetoresistance (OMR) and the negative granular-type giant magnetoresistance (GMR) appear, while at low temperatures only the large OMR of about 3.5% is observed for in-plane field. In the Co/anodized-Si system, at room temperature the MR is negligibly small, while it increases steeply with decreasing temperature and very large OMR of about 22% is obtained at 110 K for perpendicular field

  12. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  13. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    Science.gov (United States)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.

  14. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES.

    Science.gov (United States)

    Samaraweera, R L; Liu, H-C; Wang, Z; Reichl, C; Wegscheider, W; Mani, R G

    2017-07-11

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

  15. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    OpenAIRE

    Assili, Mohamed; Haddad, Sonia

    2013-01-01

    We theoretically study the effect of the motion and the merging of Dirac cone on the interlayer magnetoresistance in multilayer graphene like systems. This merging, which could be induced by a uniaxial strain, gives rise in monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase where Dirac points disappear. Based on a universal Hamiltonian proposed to describe the motion and the merging of Dirac points in two dimensional Dirac electron cr...

  16. Tailoring anisotropic magnetoresistance and giant magnetoresistance hysteresis loops with spin-polarized current injection

    International Nuclear Information System (INIS)

    Wegrowe, J.-E.; Kelly, D.; Hoffer, X.; Guittienne, Ph.; Ansermet, J.-Ph.

    2001-01-01

    Current pulses were injected into magnetic nanowires. Their effect on the magnetoresistance hysteresis loops was studied for three morphologies: homogeneous Ni wires, copper wires containing five cobalt/copper bilayers, and hybrid structures composed of a homogeneous Ni half wire and a multilayered Co/Cu half wire. The characteristic features of the action of the current on the magnetization are shown and discussed. [copyright] 2001 American Institute of Physics

  17. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  18. Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

    Science.gov (United States)

    Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

    We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

  19. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  20. Large magnetoresistance in Er7Rh3

    International Nuclear Information System (INIS)

    Sengupta, Kaushik; Sampathkumaran, E.V.

    2005-01-01

    The compound Er 2 Rh 3 has been known to order antiferromagnetically below (T N =14K), and to exhibit a change in the sign of temperature coefficient of electrical resistivity (ρ) in the paramagnetic state around 120 K. Here we report the influence of external magnetic field (H) on the ρ(T) behavior of this compound (1.8-300 K). While the ρ behavior in the paramagnetic state, qualitatively speaking, is found to be robust to the application of H, the magnitude of the magnetoresistance (MR) is significant for moderate applications of H, even at temperatures for above T N untypical of metallic systems. In addition, large values are observed in the magnetically ordered state. (author)

  1. Enhanced magnetoresistance in graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-05-01

    Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

  2. Evaluation of Magnetoresistive RAM for Space Applications

    Science.gov (United States)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  3. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  4. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  5. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  6. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  7. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  8. Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

    International Nuclear Information System (INIS)

    Bulgadaev, S.A.; Kusmartsev, F.V.

    2005-01-01

    Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures

  9. Magnetoresistance anomaly in DyFeCo thin films

    International Nuclear Information System (INIS)

    Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.

    2001-01-01

    Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics

  10. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, S. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Takahashi, Y. K.; Ohkubo, T. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Cheng, P.-H.; Ikhtiar,; Mitani, S.; Hono, K. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Kondou, K. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Otani, Y. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581 (Japan)

    2016-07-18

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  11. Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

    Directory of Open Access Journals (Sweden)

    N. Liu

    2017-12-01

    Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

  12. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  13. Oscillations in magnetoresistance and interlayer coupling in magnetic sandwich structures

    International Nuclear Information System (INIS)

    Barnas, J.; Bulka, B.

    1997-01-01

    Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting two magnetic films separated by nonmagnetic layer. In the approximation of an uniform relaxation time of each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter. (author)

  14. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    International Nuclear Information System (INIS)

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-01-01

    The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .

  15. Microstructures, surface properties, and topotactic transitions of manganite nanorods.

    Science.gov (United States)

    Gao, Tao; Krumeich, Frank; Nesper, Reinhard; Fjellvåg, Helmer; Norby, Poul

    2009-07-06

    Manganite (gamma-MnOOH) nanorods with typical diameters of 20-500 nm and lengths of several micrometers were prepared by reacting KMnO(4) and ethanol under hydrothermal conditions. Synchrotron X-ray diffraction (XRD) reveal that the gamma-MnOOH nanorods crystallize in the monoclinic space group P2(1)/c with unit cell dimensions a = 5.2983(3) A, b = 5.2782(2) A, c = 5.3067(3) A, and beta = 114.401(2) degrees . Transmission electron microscopy shows that the gamma-MnOOH nanorods are single crystalline and that lateral attachment occurs for primary rods elongated along 101. X-ray photoelectron spectroscopy studies indicate that the surfaces of the gamma-MnOOH nanorods are hydrogen deficient and compensated by surface complexation. The Raman scattering spectrum features five main contributions at 360, 389, 530, 558, and 623 cm(-1) along with four weak ones at 266, 453, 492, and 734 cm(-1), attributed to Mn-O vibrations within MnO(6) octahedral frameworks. The structural stability of the gamma-MnOOH nanorods was discussed by means of in situ time-resolved synchrotron XRD. The monoclinic gamma-MnOOH nanorods transform into tetragonal beta-MnO(2) upon heating in air at about 200 degrees C. The reaction is topotactic and shows distinctive differences from those seen for bulk counterparts. A metastable, intermediate phase is observed, possibly connected with hydrogen release via the interstitial (1 x 1) tunnels of the gamma-MnOOH nanorods.

  16. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    Science.gov (United States)

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-09

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

  17. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  18. On magnetic ordering in heavily sodium substituted hole doped lanthanum manganites

    Energy Technology Data Exchange (ETDEWEB)

    Sethulakshmi, N. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Unnimaya, A.N. [Centre for Materials for Electronic Technology (CMET), Thrissur 680581, Kerala (India); Al-Omari, I.A.; Al-Harthi, Salim [Department of Physics, Sultan Qaboos University, PC 123 Muscat (Oman); Sagar, S. [Government College for Women, Thiruvananthapuram 695014, Kerala (India); Thomas, Senoy [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019, Kerala (India); Srinivasan, G. [Department of Physics, Oakland University, Rochester (United States); Anantharaman, M.R., E-mail: mraiyer@yahoo.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2015-10-01

    Mixed valence manganite system with monovalent sodium substituted lanthanum manganites form the basis of the present work. Lanthanum manganites belonging to the series La{sub 1−x}Na{sub x}MnO{sub 3} with x=0.5–0.9 were synthesized using modified citrate gel method. Variation of lattice parameters and unit cell volume with Na concentration were analyzed and the magnetization measurements indicated ferromagnetic ordering in all samples at room temperature. Low temperature magnetization behavior indicated that all samples exhibit antiferromagnetism along with ferromagnetism and it has also been observed that antiferromagnetic ordering dominates ferromagnetic ordering as concentration is increased. Evidence for such a magnetic inhomogeneity in these samples has been confirmed from the variation in Mn{sup 3+}/Mn{sup 4+} ion ratio from X-ray Photoelectron Spectroscopy and from the absorption peak studies using Ferromagnetic Resonance Spectroscopy. - Highlights: • Higher substitution of more than 50 percent of monovalent ion, sodium for La sites in lanthanum manganites scarce in literature. • Structural studies using XRD and further structure refinement by Rietveld refinement confirmed orthorhombic pbnm spacegroup. • Ferromagnetic behavior at room temperature with saturation magnetization decreasing with increase in sodium concentration. • M vs T measurements using FC ZFC proved coexisting FM/AFM behavior arising from exchange interactions between different valence states of Mn ions. • Disparity in ratio of Mn valence ions indicated presence of vacancies providing the role of vacancies and oxygen stoichiometry in deciding magnetic inhomogeneity.

  19. Thermoelectric power and electrical conductivity of strontium-doped lanthanum manganite

    DEFF Research Database (Denmark)

    Ahlgren, E.O.; Poulsen, F.W.

    1996-01-01

    Thermoelectric power and electrical conductivity of pure and 5, 10 and 20% strontium-doped lanthanum manganite are determined as function of temperature in air and of P-O2 at 1000 degrees C. At high temperatures the thermoelectric power is negative. Both thermoelectric power and conductivity...

  20. Recent results on the giant magnetoresistance in magnetic multilayers (anisotropy, thermal variation and CCP-GMR)

    Science.gov (United States)

    Dieny, B.; Granovsky, A.; Vedyaev, A.; Ryzhanova, N.; Cowache, C.; Pereira, L. G.

    1995-12-01

    We present some recent results obtained on the electrical transport properties in magnetic multilayers. Three points are addressed. The first one is an experimental demonstration of the existence of an intrinsic anisotropy of the giant magnetoresistance (GMR). The experiments have been carried out on spin-valve samples for which there is no contribution of the usual anisotropic magnetoresistance to the observed magnetoresistance. The GMR amplitude is found to be larger (lower) in the direction perpendicular (parallel) to the sensing current. The second point concerns a quantitative analysis of the thermal variation of the CIP (current-in-plane) GMR in magnetic multilayers. This analysis is based on a semi-classical theory including the spin-intermixing due to spin-flip scattering by magnons. This approach allows quantitatively evaluation of the respective weights of the various contributions to the thermal decrease in GMR: (i) scattering by magnons in the bulk of the ferromagnetic layers; (ii) phonon scattering in the non-magnetic spacer layer; and (iii) interfacial scattering by paramagnetic interfacial layers which may form as the temperature is increased. The third point is a theoretical investigation of the CPP (current perpendicular to the plane) electrical transport through an interface between two semi-infinite metallic materials. It is shown that when a potential step U exists at such an interface, this step gives rise to an interfacial resistance proportional to U2. It also leads to the existence of large oscillations in the electric fields on both sides of the interface.

  1. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  2. Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

    International Nuclear Information System (INIS)

    Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

    2004-01-01

    In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

  3. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  4. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    International Nuclear Information System (INIS)

    Assili, M; Haddad, S

    2013-01-01

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT) 2 I 3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed. (paper)

  5. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    Science.gov (United States)

    Assili, M.; Haddad, S.

    2013-09-01

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT)2I3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed.

  6. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones.

    Science.gov (United States)

    Assili, M; Haddad, S

    2013-09-11

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT)2I3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed.

  7. Effects of magnetic and structural properties on magnetoresistance in amorphous TbFeCo

    International Nuclear Information System (INIS)

    Yumoto, S.; Hidaka, Y.; Okada, O.

    1990-01-01

    An extraordinary magnetoresistance effect, linearly dependent on the external magnetic field, is observed in amorphous TbFeCo films. The electrical resistance jumps by δρ at magnetization reversal. δρ depends on Tb concentration and it becomes nearly zero at about Tb 26 at. % concentration. To clarify the Tb concentration dependence of δρ, the magnetic properties and the heat treatment effect are examined. It is found that the magnetic anisotropy field (H k ) is maximum at about Tb 26 at. % and the gradient of linear magnetoresistance, δρ/(ρ 0 H c ), is proportional to the -H k + const, where ρ 0 is the electric resistance in zero field, H c is the coercive force, and the constant is about 100 kOe. The structural relaxation, a coercive force change by the heat treatment up to 200 degree C, is examined. It is found that as δρ/(ρ 0 H c ) in the as-sputtered state decreases, the coercive force change by the heat treatment decreases. The coercive force change is minimum at about Tb 26 at. %, where δρ/(ρ 0 H c ) becomes zero. These results mean that linear magnetoresistance is related to structure relaxation by heat treatment. The δρ disappearance at about Tb 26 at. % is based on the stable structure against heat treatment and the largest magnetic anisotropy field

  8. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  9. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  10. Electron localization, polarons and clustered states in manganites

    International Nuclear Information System (INIS)

    Mannella, N.

    2004-01-01

    Full text: A recent multi-spectroscopic study of prototypical colossal magnetoresistance (CMR) compounds La 1-x Sr x MnO 3 (LSMO, x = 0.3, 0.4) using photoemission (PE), x-ray absorption (XAS), x-ray emission (XES) and extended x-ray absorption e structure (EXAFS) has exposed a dramatic change in the electronic structure on crossing the ferromagnetic-to-paramagnetic transition temperature (T C ). In particular, this investigation revealed an increase of the Mn magnetic moment by ca. 1 Bohr magneton and charge transfer to the Mn atom on crossing T C concomitant with the presence of Jahn-Teller distortions, thus providing direct evidence of lattice polaron formation. These results thus challenge the belief of some authors that the LSMO compounds are canonical double-exchange (DE) systems in which polaron formation is unimportant, and thus help to unify the theoretical description of the CMR oxides. The relationship of these data to other recent work suggesting electron localization, polarons and phase separation, along with additional measurements of magnetic susceptibility indicating the formation of ferromagnetic clusters in the metallic paramagnetic state above T C will be discussed

  11. Colossal magnetoresistance of bulk Ag-doped Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3} two-phase composites

    Energy Technology Data Exchange (ETDEWEB)

    Cui Xugao [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China); Hu Xiukun [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China); Xia Hongxu [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China); Yu Jiangying [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang Shiyuan [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China)]. E-mail: zsy@netra.nju.edu.cn

    2005-05-17

    We have prepared a series of bulk polycrystalline manganites with the nominal compositions, Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3}-Ag {sub x} (x is the molar fraction) with x = 0.1, 0.2, 0.3, 0.4, 0.5 by conventional solid-state reaction. The X-ray diffraction patterns show that the sample Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3} (x = 0) is a single-phase compound with the pseudocubic perovskite structure, while the Ag-doped samples are two-phase composites consisting of a ferromagnetic perovskite phase and a nonmagnetic Ag metal phase. For all the samples, the Curie temperature, T {sub C}, remains nearly the same (228 {+-} 2 K), but the maximum magnetoresistance in a magnetic field of 1 T at 222 K is enhanced strongly due to the addition of Ag, namely, from 45% for the Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3} sample to 188, 277, 142, 158 and 151% for the Nd{sub 0.7}Sr{sub 0.3}MnO{sub 3}-Ag {sub x} samples with x = 0.1, 0.2, 0.3, 0.4, and 0.5, respectively. This magnetoresistance-enhancement phenomenon can be attributed to the spin-dependent scattering of the spin-polarized electrons at the interfaces between the perovskite grains and the Ag granules.

  12. Magnetoresistance and magnetization in submicron ferromagnetic gratings

    Science.gov (United States)

    Shearwood, C.; Blundell, S. J.; Baird, M. J.; Bland, J. A. C.; Gester, M.; Ahmed, H.; Hughes, H. P.

    1994-05-01

    A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.

  13. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-01-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%

  14. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  15. Inverse Magnetoresistance in Polymer Spin Valves.

    Science.gov (United States)

    Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

    2017-05-10

    In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

  16. Tunneling magnetoresistance from a symmetry filtering effect

    International Nuclear Information System (INIS)

    Butler, William H

    2008-01-01

    This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review)

  17. Anisotropic magnetoresistance and tunneling magnetoresistance of conducting filaments in NiO with different resistance states

    Science.gov (United States)

    Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, F.-K.; Wu, Jian; Luo, Jianlin; Li, Jianqi; Wang, Yayu; Zhao, Yonggang; Tsinghua University Team; Chinese Academy of Sciences Collaboration

    Resistive switching (RS) effect in conductor/insulator/conductor thin-film stacks has attracted much attention due to its interesting physics and potentials for applications. NiO is one of the most representative systems and its RS effect has been generally explained by the formation and rupture of Ni related conducting filaments, which are very unique since they are formed by electric forming process. We study the MR behaviors in NiO RS films with different resistance states. Rich and interesting MR behaviors were observed, including the normal and anomalous anisotropic magnetoresistance (AMR) and tunneling magnetoresistance (TMR), etc., which provide new insights into the nature of the filaments and their evolution in the resistive switching process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for the exploration of the conducting filaments in RS materials, and is significant for understanding the RS mechanism as well as multifunctional device design.

  18. Magnetoresistance of magnetically doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)

    2009-08-26

    Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

  19. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  20. Fusion neutron effects on magnetoresistivity of copper stabilizer materials

    International Nuclear Information System (INIS)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-01-01

    Eight copper wires were repeatedly irradiated at 4.2 to 4.4 K with 14.8 MV neutrons and isochronally annealed at temperatures up to 34 0 C for a total of five cycles. Their electrical resistances were monitored during irradiation under zero applied magnetic field. After each irradiation the magnetoresistances were measured in applied transverse magnetic fields of up to 12 T. Then the samples were isochronally annealed to observe the recovery of the resistivity and magnetoresistivity. After each anneal at the highest temperature (34 0 C), some of the damage remained and contributed to the damage state observed following the subsequent irradiation. In this way, we were able to observe how the changes in magnetoresistance would accumulate during the repeated irradiations and anneals expected to be characteristic of fusion reactor magnets. For each succeeding irradiation the fluence was chosen to produce approximately the same final magnetoresistance at 12 T, taking account of the accumulating residual radiation damage. The increment of magnetoresistivity added by the irradiation varied from 35 to 65% at 12 T and from 50 to 90% at 8 T for the various samples

  1. Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC

    CERN Document Server

    Sukhanov, A A

    2003-01-01

    The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...

  2. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-12-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  3. Tunnel magnetoresistance of an as-deposited Co2FeAl0.5Si0.5-based magnetic tunnel junction on a Ta/Ru buffer layer

    International Nuclear Information System (INIS)

    Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In

    2010-01-01

    A magnetic tunnel junction (MTJ) with a Co 2 FeAl 0.5 Si 0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 .deg. C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlO x /CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.

  4. Investigation on structural, magneto-transport, magnetic and thermal properties of La{sub 0.8}Ca{sub 0.2−x}Ba{sub x}MnO{sub 3} (0 ⩽ x ⩽ 0.2) manganites

    Energy Technology Data Exchange (ETDEWEB)

    Manjunatha, S.O. [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Rao, Ashok, E-mail: ashokanu_rao@rediffmail.com [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Subhashini [Material Processing Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal 575025 (India); Okram, G.S. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452 001, MP (India)

    2015-08-15

    Highlights: • Ba-doped compounds follow small polaron hopping model in high temperature range. • Ba-doping introduces structural phase transformation. • MR (%) decreases with Ba-doping, however T{sub MI} and T{sub C} increase with doping. • High temperature TEP data follows SPH model. • At low temperatures, electron–magnon scattering play role in thermal transport. - Abstract: A systematic study on the structural, electrical, magnetic and thermo-electric properties of La{sub 0.8}Ba{sub x}Ca{sub 0.2−x}MnO{sub 3} (0 ⩽ x ⩽ 0.2) manganites is carried out in the present work. The samples have been prepared using solid state reaction technique. All the samples are single phased. It is seen that Ba-doping introduces a structural phase transformation viz. from rhombohedral to cubic system. Electric and magnetic studies respectively show that the metal–insulator transition temperature, T{sub MI} and Curie temperature, T{sub C} increase with Ba-content. Magneto-resistance (MR) data shows that it decreases with Ba-doping. Analyses of the electrical transport data in metallic region i.e. T < T{sub MI} shows that the electrical transport is governed predominantly by electron–electron scattering process. On the other hand, the adiabatic small polaron hopping (ASPH) model is appropriate in the high-temperature insulating range viz. T > T{sub MI}. We have used the electrical resistivity data in the entire temperature range (50–300 K) and analyzed using the phenomenological percolation model which is based on the phase segregation mechanism. We have analyzed the Seebeck coefficient data which reveals that the small polaron hopping mechanism is operative in high temperature regime and the low temperature region is examined by taking into account the impurity, electron–magnon scattering, and spin wave fluctuation terms. It is established that the electron–magnon scattering is dominating for the thermoelectric transport below T{sub MI}.

  5. Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

    Science.gov (United States)

    Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

    2015-02-24

    We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

  6. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors.

    Science.gov (United States)

    Tavassolizadeh, Ali; Rott, Karsten; Meier, Tobias; Quandt, Eckhard; Hölscher, Hendrik; Reiss, Günter; Meyners, Dirk

    2016-11-11

    Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  7. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  8. Studies of colossal magnetoresistive oxides with radioactive isotopes

    CERN Document Server

    CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC

    2000-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...

  9. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-06-07

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  10. Extremely large magnetoresistance and Kohler's rule in PdSn4: A complete study of thermodynamic, transport, and band-structure properties

    Science.gov (United States)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.; Manni, Soham; Mou, Dixiang; Johnson, Duane D.; Kaminski, Adam; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-10-01

    The recently discovered material PtSn4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn4 is isostructural to PtSn4 with the same electron count. We report on the physical properties of high-quality single crystals of PdSn4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn4 has physical properties that are qualitatively similar to those of PtSn4, but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn4 is gapped out for PdSn4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn4 and PtSn4; based on detailed analysis of the magnetoresistivity ρ (H ,T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  11. Extremely large magnetoresistance and Kohler's rule in PdSn4 : A complete study of thermodynamic, transport, and band-structure properties

    International Nuclear Information System (INIS)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.

    2017-01-01

    The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn 4 is gapped out for PdSn 4 . By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4 ; based on detailed analysis of the magnetoresistivity ρ (H , T) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  12. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from...... the sensor bias current to magnetize magnetic beads in the vicinity of the sensor. The method allows for real-time measurements of the specific bead binding to the sensor surface during DNA hybridization and washing. Compared to other magnetic biosensing platforms, our approach eliminates the need...... for external electromagnets and thus allows for miniaturization of the sensor platform....

  13. Detection of magnetic resonance signals using a magnetoresistive sensor

    Science.gov (United States)

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  14. Magnetoresistance of films and strips with the diffuse surface scattering

    International Nuclear Information System (INIS)

    Aronov, A.G.

    1993-08-01

    Magnetoresistance of films in a parallel magnetic field and strips in a perpendicular field is considered. The temperature and magnetic field dependencies of magnetoconductance depend on the time evolution of the correlator of phases. This correlator has different behavior as the function of time: the ergodic behavior at small magnetic fields is changed on the nonergodic one at large magnetic fields in spite of the diffusion electron motion due to a diffuse scattering on boundaries. This leads to unusual temperature and magnetic field dependencies of magnetoresistance. The ergodic hypothesis is not applicable to mesoscopical fluctuations at such a large quasiclassical field. (author). 6 refs, 5 figs

  15. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  16. Anomalous rf magnetoresistance in copper at 4/degree/K

    International Nuclear Information System (INIS)

    Halama, H.J.; Prodell, A.G.; Rogers, J.T.

    1988-03-01

    We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f = 1.2 GHz and at 4.4/degree/K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the DC magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the TF surface current. 17 refs., 4 figs., 1 tab

  17. Strain effects on anisotropic magnetoresistance in a nanowire spin valve

    Science.gov (United States)

    Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

    2016-11-01

    The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

  18. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    International Nuclear Information System (INIS)

    Heine, G.

    1999-05-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order

  19. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2015-01-01

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  20. Evolution and control of the phase competition morphology in a manganite film

    OpenAIRE

    Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

    2015-01-01

    The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a str...

  1. Morphology evolution in spinel manganite films deposited from an aqueous solution

    International Nuclear Information System (INIS)

    Ko, Song Won; Li, Jing; Trolier-McKinstry, Susan

    2012-01-01

    Spinel manganite films were deposited by the spin spray technique at low deposition temperatures ( 1000, agglomeration of small particles was dominant, which suggests that homogeneous nucleation is dominant during deposition. Heterogeneous nucleation was critical to obtain dense films. - Highlights: ► Film microstructure depends on supersaturation. ► Heterogeneous nucleation induces dense and continuous films. ► The spin spray technique enables use of a variety of substrates.

  2. Features of magnetic susceptibility and inhomogeneous magnetic state in La-Sr manganites

    International Nuclear Information System (INIS)

    Dovgij, V.T.; Linnik, A.I.; Kamenev, V.I.; Prokopenko, V.K.; Mikhajlov, V.I.; Khokhlov, V.A.; Kadontseva, A.M.; Linnik, T.A.; Davydejko, N.V.; Turchenko, V.A.

    2007-01-01

    Anomalous magnetic susceptibility has been observed in mono- and polycrystalline (ceramic) samples of La-Sr manganites. The oscillations of the magnetic susceptibility observed for monocrystal samples in the vicinity of the Curie temperature (and in the paramagnetic region) are explained by the existence of magnetic clusters. The appearance of susceptibility oscillations in ceramic samples is attributed to the formation of magnetic clusters, which may occur both in grains (at the interface between ferro- and antiferromagnetic phases) and at the grain boundaries [ru

  3. Titania-coated manganite nanoparticles: synthesis of the shell, characterization and MRI properties

    Czech Academy of Sciences Publication Activity Database

    Jirák, Zdeněk; Kuličková, Jarmila; Herynek, Vít; Maryško, Miroslav; Koktan, Jakub; Kaman, Ondřej

    2017-01-01

    Roč. 427, Apr (2017), s. 245-250 ISSN 0304-8853 R&D Projects: GA ČR GA15-10088S; GA ČR GA16-04340S Institutional support: RVO:68378271 ; RVO:68378041 Keywords : magnetic nanoparticles * core-shell nanoparticles * titania coating * perovskite manganite * magnetic resonance imaging * transverse relaxivity Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.630, year: 2016

  4. Oxygen and disorder effect in the magnetic properties of manganite films

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M. E-mail: sirenam@ib.cnea.gov.ar; Haberkorn, N.; Granada, M.; Steren, L.B.; Guimpel, J

    2004-05-01

    We have made a systematic study of the magnetic properties of low doped manganite films submitted to different oxygenation treatments. We have found that oxygenation dynamics depends critically of the strain field in the sample. The T{sub C} and the Mr increase as the oxygen content is increased. A decrease of the coercive field of the LSMO-STO films was observed, indicating that annealing treatments increase the oxygen content reducing oxygen vacancies.

  5. Oxygen and disorder effect in the magnetic properties of manganite films

    International Nuclear Information System (INIS)

    Sirena, M.; Haberkorn, N.; Granada, M.; Steren, L.B.; Guimpel, J.

    2004-01-01

    We have made a systematic study of the magnetic properties of low doped manganite films submitted to different oxygenation treatments. We have found that oxygenation dynamics depends critically of the strain field in the sample. The T C and the Mr increase as the oxygen content is increased. A decrease of the coercive field of the LSMO-STO films was observed, indicating that annealing treatments increase the oxygen content reducing oxygen vacancies

  6. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

    OpenAIRE

    Samaraweera, R. L.; Liu, H.-C.; Wang, Z.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2017-01-01

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the obs...

  7. Magnetocaloric effect in potassium doped lanthanum manganite perovskites prepared by a pyrophoric method

    Science.gov (United States)

    Das, Soma; Dey, T. K.

    2006-08-01

    The magnetocaloric effect (MCE) in fine grained perovskite manganites of the type La1-xKxMnO3 (0value of 3.00 J kg-1 K-1 at 310 K amongst the compounds investigated. Moreover, the maximum magnetic entropy change exhibits a linear dependence with applied magnetic field. The estimated adiabatic temperature change at TC and at 1 T field also increases with K doping, being a maximum of 2.1 K for the La0.85K0.15MnO3 compound. The relative cooling power (RCP) of La1-xKxMnO3 compounds is estimated to be about one-third of that of the prototype magnetic refrigerant material (pure Gd). However, La1-xKxMnO3 compounds possess an MCE around room temperature, which is comparable to that of Gd. Further, tailoring of their TC, higher chemical stability, lower eddy current heating and lower cost of synthesis are some of the attractive features of K doped lanthanum manganites that are advantageous for a magnetic refrigerant. The temperature dependence of the magnetic entropy change (ΔSM) measured under various magnetic fields is explained fairly well using the Landau theory of phase transitions. Contributions of magnetoelastic and electron interaction are found to have a strong influence in the magnetocaloric effect of manganites.

  8. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

    Science.gov (United States)

    Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing

    2014-07-18

    In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.

  9. Tailoring spin injection and magnetoresistance in ferromagnet/graphene junctions from first principles

    Science.gov (United States)

    Lazic, Predrag; Sipahi, Guilherme; Kawakami, Roland; Zutic, Igor

    2013-03-01

    Recent experimental advances in graphene suggest intriguing opportunities for novel spintronic applications which could significantly exceed the state-of-the art performance of their conventional charge-based counterparts. However, for reliable operation of such spintronic devices it is important to achieve an efficient spin injection and large magnetoresistive effects. We use the first principles calculations to guide the choice of a ferromagnetic region and its relative orientation to optimize the desired effects. We propose structures which could enable uniform spin injection, one of the key factors in implementing scalable spintronic circuits. Supported by NSF-NRI, SRC, ONR, Croatian Ministry of Science, Education, and Sports, and CCR at SUNY UB.

  10. Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

    Science.gov (United States)

    Yahagi, Y.; Miura, D.; Sakuma, A.

    2018-05-01

    We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

  11. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ˜5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ˜400%.

  12. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    International Nuclear Information System (INIS)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%

  13. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  14. Separating positive and negative magnetoresistance in organic semiconductor devices

    NARCIS (Netherlands)

    Bloom, F.L.; Wagemans, W.; Kemerink, M.; Koopmans, B.

    2007-01-01

    We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq3), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The

  15. Magnetoresistance in spin glass alloys: Theory and experiment

    International Nuclear Information System (INIS)

    Mookerjee, A.; Chowdhury, D.

    1984-11-01

    The magnetoresistance of spin glass alloys is examined within the percolation model of Mookerjee and Chowdhury (1983), the mode freezing model of Hertz (1983) and the constrained relaxation model of Palmer et al. (1984). All three models yield qualitatively similar results in excellent agreement with the experiments of Majumdar (1983, 1984) on AgMn. (author)

  16. Study of magnetoresistance and conductance of bicrystal grain ...

    Indian Academy of Sciences (India)

    Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature > 175 K. At low temperature, - characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of ...

  17. High field magnetoresistance in Co-Al-O nanogranular films

    Czech Academy of Sciences Publication Activity Database

    Chayka, Oleksandr; Kraus, Luděk; Lobotka, P.; Sechovsky, V.; Kocourek, Tomáš; Jelínek, Miroslav

    2006-01-01

    Roč. 300, - (2006), s. 293-299 ISSN 0304-8853 R&D Projects: GA AV ČR(CZ) IAA1010204 Institutional research plan: CEZ:AV0Z10100520 Keywords : granular system * superparamagnetism * tunneling magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.212, year: 2006

  18. Tuning spin transport properties and molecular magnetoresistance through contact geometry.

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  19. The magnetoresistivity of some rare-earth metals

    International Nuclear Information System (INIS)

    Webber, G.D.

    1978-10-01

    The thesis describes measurements of the low temperature transverse magnetoresistivities of single crystals of rare-earth metals in magnetic fields up to 8 Tesla. A general introduction to the rare-earths, their magnetic properties and a review of the basic theory and mechanism of magnetoresistivity is given. Details of the crystal structure, growth of single crystals and sample mounting method follow. The experimental equipment and measuring techniques are then described. The low temperature transverse magnetoresistivity of polycrystalline lanthanum and single crystal praseodymium for the temperature range 4.2 - 30K is measured. The separation of the spin-disorder and Fermi-surface orbital effect contributions are described and the theoretical and experimental spin-disorder values compared. Magnetoresistivity measurements for neodymium single crystals (4.2 - 30K) are compared with the magnetic properties determined from neutron diffraction studies. Results for gadolinium single crystals (4.2 - 200K) are compared for two different impurity levels and with previous work. (UK)

  20. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    Science.gov (United States)

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-06-17

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors.

  1. Magnetic giant magnetoresistance commercial off the shelf for space applications

    DEFF Research Database (Denmark)

    Michelena, M.D.; Oelschlägel, Wulf; Arruego, I.

    2008-01-01

    The increase of complexity and miniaturizing level of Aerospace platforms make use of commercial off the shelf (COTS) components constitute a plausible alternative to the use of military or rad-tolerant components. In this work, giant magnetoresistance commercial sensors are studied to be used as......-375 mu T biasing field. (c) 2008 American Institute of Physics....

  2. Giant enhancement of magnetocrystalline anisotropy in ultrathin manganite films via nanoscale 1D periodic depth modulation

    Science.gov (United States)

    Rajapitamahuni, Anil; Zhang, Le; Singh, Vijay; Burton, John; Koten, Mak; Shield, Jeffrey; Tsymbal, Evgeny; Hong, Xia

    We report a unusual giant enhancement of in-plane magnetocrystalline anisotropy (MCA) in ultrathin colossal magnetoresistive oxide films due to 1D nanoscale periodic depth modulation. High quality epitaxial thin films of La0.67Sr0.33MnO3 (LSMO) of thickness 6 nm were grown on (001) SrTiO3 substrates via off-axis radio frequency magnetron sputtering. The top 2 nm of LSMO films are patterned into periodic nano-stripes using e-beam lithography and reactive ion etching. The resulting structure consists of nano-stripes of 2 nm height and 100-200 nm width on top of a 4 nm thick continuous base layer. We employed planar Hall effect measurements to study the in-plane magnetic anisotropy of the unpatterned and nanopatterned films. The unpatterned films show a biaxial anisotropy with easy axis along [110]. The extracted anisotropy energy density is ~1.1 x 105 erg/cm3, comparable to previously reported values. In the nanopatterned films, a strong uniaxial anisotropy is developed along one of the biaxial easy axes. The corresponding anisotropy energy density is ~5.6 x 106 erg/cm3 within the nano-striped volume, comparable to that of Co. We attribute the observed uniaxial MCA to MnO6 octahedral rotations/tilts and the enhancement in the anisotropy energy density to the strain gradient within the nano-stripes.

  3. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors

    Directory of Open Access Journals (Sweden)

    Ali Tavassolizadeh

    2016-11-01

    Full Text Available Magnetostrictive tunnel magnetoresistance (TMR sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJs with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner–Wohlfarth (SW model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of −3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and −311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and −260 for tensile and compressive stresses, respectively, under a −3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  4. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  5. Spin glass behavior in nanogranular La0.25Ca0.75MnO3 manganites

    International Nuclear Information System (INIS)

    2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" data-affiliation=" (Grup de Magnetisme, Dept. Física Fonamental, Facultat de Física, Universitat de Barcelona, Martí i Franquès 1, planta 4, edifici nou, 08028 Barcelona (Spain); Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" >Fernández-Martínez, Antoni; 2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" data-affiliation=" (Grup de Magnetisme, Dept. Física Fonamental, Facultat de Física, Universitat de Barcelona, Martí i Franquès 1, planta 4, edifici nou, 08028 Barcelona (Spain); Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" >García-Santiago, Antoni; 2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" data-affiliation=" (Grup de Magnetisme, Dept. Física Fonamental, Facultat de Física, Universitat de Barcelona, Martí i Franquès 1, planta 4, edifici nou, 08028 Barcelona (Spain); Institut de Nanociència i Nanotecnologia IN2UB, Universitat de Barcelona, Martí i Franquès 1, planta 3, edifici nou, 08028 Barcelona (Spain))" >Hernàndez, Joan Manel; Zhang, Tao

    2014-01-01

    The magnetic properties of two nanogranular La 0.25 Ca 0.75 MnO 3 manganites with different average grain sizes have been studied. Besides the well-known exchange bias effect and the appearance of ferromagnetic clusters in the grains of both samples, the results show the occurrence of an antiferromagnetic transition and spin-glass properties. Both samples are described as core–shell magnetic systems, whose main difference is found in the interface between the outer ferromagnetic and the inner antiferromagnetic phases of the grains. - Highlights: • Nanogranular manganites show antiferromagnetism in magnetic measurements. • Exchange bias effect was observed in magnetic hysteresis cycles. • Spin-glass properties were detected at low temperatures. • A core-shell model was applied to describe the results in both samples. • These features have nothing to do with usual properties of nanoparticle manganites

  6. Effects of disorder on the out-of-plane magnetoresistance in the high-Tc BISCCO compound

    International Nuclear Information System (INIS)

    Khalil, A.E.

    1997-01-01

    An explanation is proposed to account for the observed anisotropic out-of-plane magnetoresistivity of the single crystal high temperature superconductor BISCCO compound. The explanation is based on a dynamic scaling model for conductivity fluctuations in the superconducting matrix. In this model, it is assumed that the c-axis conduction in an applied field parallel to the c-direction occurs through defect-mediated interplanar ''weak links'' which behave as an array of parallel, independently fluctuating, superconducting channels. The model also takes into account the possibility of thermally induced dimensional crossover above which the superconducting layers are effectively decoupled and behave as a quasi two-dimensional system. The predictions of the model are consistent with the magnetoresistance measurements reported for two separate experiments on Bi 2 Sr 2 CaCu 2 O 8 single crystals. (orig.)

  7. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  8. Large intragrain magnetoresistance above room temperature in the double perovskite Ba2FeMoO6

    International Nuclear Information System (INIS)

    Maignan, A.; Raveau, B.; Martin, C.; Hervieu, M.

    1999-01-01

    Large intragrain magnetoresistance (MR) in the ordered double perovskite, Ba 2 FeMo 6 , is shown for the first time. The latter appears near T c (340 K), i.e., above room temperature. This effect originates from a double-exchange-like mechanism, based on antiferromagnetic coupling of localized high spin 3d 5 Fe 3+ , and itinerant 4d 1 Mo 5+ species. Besides this bulk MR, low field tunneling MR at lower temperatures (T 2 FeMoO 6 . Such a coexistence of both effects, intragrain and intergrain magnetoresistance, might extend to all members of this double perovskite family, suggesting the possibility of optimizing the MR for working at room temperature in a low magnetic field, by tuning the T c of solid solutions of such perovskites

  9. Study of the Durability of Doped Lanthanum Manganite and Cobaltite Cathode Materials under ''Real World'' Air Exposure Atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Prabhakar [Univ. of Connecticut, Storrs, CT (United States); Mahapatra, Manoj [Univ. of Connecticut, Storrs, CT (United States); Ramprasad, Rampi [Univ. of Connecticut, Storrs, CT (United States); Minh, Nguyen [Univ. of California, San Diego, CA (United States); Misture, Scott [Alfred Univ., NY (United States)

    2014-11-30

    The overall objective of the program is to develop and validate mechanisms responsible for the overall structural and chemical degradation of lanthanum manganite as well as lanthanum ferrite cobaltite based cathode when exposed to “real world” air atmosphere exposure conditions during SOFC systems operation. Of particular interest are the evaluation and analysis of degradation phenomena related to and responsible for (a) products formation and interactions with air contaminants, (b) dopant segregation and oxide exolution at free surfaces, (c) cation interdiffusion and reaction products formation at the buried interfaces, (d) interface morphology changes, lattice transformation and the development of interfacial porosity and (e) micro-cracking and delamination from the stack repeat units. Reaction processes have been studied using electrochemical and high temperature materials compatibility tests followed by structural and chemical characterization. Degradation hypothesis has been proposed and validated through further experimentation and computational simulation.

  10. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  11. The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

    International Nuclear Information System (INIS)

    Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

    2012-01-01

    We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Anomalous magnetoresistance effect in sputtered TbFeCo relating to dispersed magnetic moment

    International Nuclear Information System (INIS)

    Yumoto, S.; Toki, K.; Okada, O.; Gokan, H.

    1988-01-01

    The electric resistance is sputtered TbFeCo has been measured at room temperature as a function of magnetic field perpendicular to the film plane. Two kinds of anomalous magnetoresistance have been observed. One is a magnetoresistance peak in the magnetization reversal region. The other is reversible change proportional to the applied magnetic field, appearing in the other region. The magnetoresistance peak agrees well with a curve calculated from experimental Hall loop, using a phenomenological relation between anomalous magnetoresistance and anomalous Hall voltage. The magnetoresistance peak is found to originate from magnetic domain walls. The linear magnetoresistance change for TM dominant samples appears in a direction opposite to that for RE dominant samples. The linear change can't be derived from Hall loop

  13. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

    Science.gov (United States)

    Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

    2017-06-05

    In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

  14. Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$

    OpenAIRE

    Kumar, Devendra; Lakhani, Archana

    2016-01-01

    The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear ma...

  15. Magnetoresistance of amorphous CuZr: weak localization in a three dimensional system

    International Nuclear Information System (INIS)

    Bieri, J.B.; Fert, A.; Creuzet, G.

    1984-01-01

    Observations of anomalous magnetoresistance in amorphous CuZr at low temperature are reported. The magnetoresistance can be precisely accounted for in theoretical models of localization for 3-dimensional metallic systems in the presence of strong spin-orbit interactions (with a significant additional contribution from the quenching of superconducting fluctuations at the lowest temperatures). Magnetoresistance measurements on various other systems show that such 3-dimensional localization effects are very generally observed in amorphous alloys. (author)

  16. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

    Science.gov (United States)

    Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

    2018-02-14

    Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

  17. Large magnetization and frustration switching of magnetoresistance in the double-perovskite ferrimagnet Mn2FeReO6.

    Science.gov (United States)

    Arévalo-López, Angel M; McNally, Graham M; Attfield, J Paul

    2015-10-05

    Ferrimagnetic A2 BB'O6 double perovskites, such as Sr2 FeMoO6 , are important spin-polarized conductors. Introducing transition metals at the A-sites offers new possibilities to increase magnetization and tune magnetoresistance. Herein we report a ferrimagnetic double perovskite, Mn2 FeReO6 , synthesized at high pressure which has a high Curie temperature of 520 K and magnetizations of up to 5.0 μB which greatly exceed those for other double perovskite ferrimagnets. A novel switching transition is discovered at 75 K where magnetoresistance changes from conventional negative tunneling behavior to large positive values, up to 265 % at 7 T and 20 K. Neutron diffraction shows that the switch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+) and Re(5+) spins and reduces spin-polarization. Ferrimagnetic double perovskites based on A-site Mn(2+) thus offer new opportunities to enhance magnetization and control magnetoresistance in spintronic materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Structural studies of spinel manganite ceramics with positron annihilation lifetime spectroscopy

    International Nuclear Information System (INIS)

    Klym, H; Shpotyuk, O; Hadzaman, I; Ingram, A; Filipecki, J

    2011-01-01

    The new transition-metal manganite Cu 0.1 Ni 0.8 Co 0.2 Mn 1.9 O 4 ceramics for temperature sensors with improved functional reliability are first proposed. It is established that the amount of additional NiO phase in these ceramics extracted during sintering play a decisive role. This effect is well revealed only in ceramics having a character fine-grain microstructure, while the monolithization of ceramics caused by great amount of transferred thermal energy reveals an opposite influence. The process of monolitization from the position of evolution of grain-pore structure was studied in these ceramics using positron annihilation lifetime spectroscopy.

  19. Structure and magnetocaloric properties of La1-xKxMnO3 manganites

    International Nuclear Information System (INIS)

    Aliev, A.M.; Gamzatov, A.G.; Batdalov, A.B.; Mankevich, A.S.; Korsakov, I.E.

    2011-01-01

    A technology of obtaining the single-phase ceramic samples of La 1-x K x MnO 3 manganites and the dependence of their structural parameters on the content of potassium has been described. Magnetocaloric effect (MCE) in the obtained samples has been measured by two independent methods: classical direct methodic and a method of magnetic field modulation. The values of MCE obtained by both methods substantially differ. The explanation of the observed divergences is given. The correlation between the level of doping and MCE value has been defined. The value of T C determined by the MCE maximum conforms with the literature data obtained by other methods.

  20. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed; Khan, Mohammed Zahed Mustafa; Cardoso, Susana; Leitao, Diana; Kosel, Jü rgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  1. Magnetoresistance of microstructured permalloy ellipses having multi-domain configurations

    International Nuclear Information System (INIS)

    Kuo, C.Y.; Chung, W.S.; Wu, J.C.; Horng, Lance; Wei, Z.-H.; Lai, M.-F.; Chang, C.-R.

    2007-01-01

    Mirostructured permalloy ellipses having purposely designed multi-domain configurations were investigated. The samples were fabricated using e-beam lithography through a lift-off process. The magnetoresistance measurements were carried out with a constant dc sensing current under the external magnetic field applied along the short axis. The magnetoresistance curves manifest characteristic features in accordance with the specific domain configurations. Step-like/kink features were observed on the ellipses with cross-tie wall/two-vortex configuration and step-like plus kink magnetorsistance curve was found on the ellipse with cross-tie wall combining with two-vortex structure. A magnetic force microscopy and a micromagnetic simulation were employed to support these results

  2. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  3. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  4. Temperature dependence of magnetoresistance in copper single crystals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2018-03-01

    Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

  5. Giant negative magnetoresistance in Ni(quinoline-8-selenoate)2.

    Science.gov (United States)

    Black, Nicholas; Daiki, Tonouchi; Matsushita, Michio M; Woollins, J Derek; Awaga, Kunio; Robertson, Neil

    2017-12-20

    The magnetic, structural, conductivity and magnetoresistance properties of [Ni(quinoline-8-selenoate) 2 ] ([Ni(qs) 2 ]) have been studied. Despite the insolubility of the material necessitating its study as a powdered sample, a remarkably high conductivity has been measured. The conductivity is an order of magnitude greater than the thin-film processable thiol analogue previously reported and has been interpreted through the same space-charge limited conduction mechanism with charges injected from the electrodes. The introduction of selenium, results in a material with conductivity approaching metallic due to the enhanced interaction between adjacent molecules. Additionally, under an applied magnetic field, the material displays a negative magnetoresistance effect above 35% at 2 K. The effect can still be observed at 200 K and is interpreted in terms of a double-exchange mechanism.

  6. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  7. Magnetoresistance effect of heat generation in a single-molecular spin-valve

    International Nuclear Information System (INIS)

    Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

    2016-01-01

    Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily. - Highlights: • Spin-valve effect of heat generation happens when Coulomb repulsion in quantum dot is less than phonon frequency. • When Coulomb repulsion is larger than phonon frequency, inverse spin-valve effect appears and is enlarged with bias increasing. • The variation of spin polarization degree can change heat generation effectively. • The heat magnetoresistance can be modulated from heat-resistance to heat-gain by gate voltage easily.

  8. Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition.

    Science.gov (United States)

    Datta, Subhadeep; Cai, Yongqing; Yudhistira, Indra; Zeng, Zebing; Zhang, Yong-Wei; Zhang, Han; Adam, Shaffique; Wu, Jishan; Loh, Kian Ping

    2017-09-22

    Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS 2 couples to their electronic structure, affecting magnetotransport.

  9. Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

    Science.gov (United States)

    Prarokijjak, Worasak; Soodchomshom, Bumned

    2018-04-01

    Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

  10. Electronic Structure, Irreversibility Line and Magnetoresistance of Cu_0_._3Bi_2Se_3 Superconductor

    International Nuclear Information System (INIS)

    Yi He-Mian; Chen Chao-Yu; Sun Xuan; Xie Zhuo-Jin; Feng Ya; Liang Ai-Ji; Peng Ying-Ying; He Shao-Long; Zhao Lin; Liu Guo-Dong; Dong Xiao-Li; Zhang Jun; Zhou Xing-Jiang; Chen Chuang-Tian; Xu Zu-Yan; Gu Gen-Da

    2015-01-01

    Cu_xBi_2Se_3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the Cu_xBi_2Se_3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi_2Se_3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ∼4000 Oe for the Cu_0_._3Bi_2Se_3 superconductor with a middle point T_c of 1.9K. The relation between the upper critical field H_c_2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu_0_._3Bi_2Se_3 superconductors up to room temperature. These observations provide useful information for further study of this possible candidate for topological superconductors. (paper)

  11. Magneto-transport and thermoelectric properties of La0.8-xBixCa0.2MnO3 manganites

    International Nuclear Information System (INIS)

    Manjunatha, S.O.; Rao, Ashok

    2015-01-01

    In the present work, we report the studies on the magneto-transport and thermoelectric properties of La 0.8-x Bi x Ca 0.2 MnO 3 (x = 0.00, 0.05, 0.10) manganites. The samples were prepared using the conventional solid state reaction method. Structural characterization has done using XRD. Rietveld refinement technique has confirmed the single phase formation of the samples with no impurity peaks observed within experimental limits. SEM micrograph confirms the formation of grains with good intimacy. The cell parameters and the unit cell volume is observed to decrease with increasing Bi concentration. It is attributed to the smaller ionic size of Bi compare to La. Magneto-resistance of the samples are measured using standard four probe technique. The Metal-Insulator transition (TMI) is found to decrease upon doping with overall increase in the resistivity. The observed effect is due to the fact that the Ca ions possibly increases the tendency of screening of 6s 2 orbital of Bi 3+ ions. As orientation of the 6s 2 lone pair toward a surrounding anion (O 2- ) produces a local distortion and as a result, the movement of eg electrons through the Mn-O-Mn bridges, is severely reduced. Resistance of the samples is observed to reduce on application of magnetic field of 8Tesla due to the fact that the magnetic field induces spin alignment and suppress the spin fluctuation resulting in large decrease in resistance. Thermopower measurement shows that all the samples are exhibiting the anomaly of phase transition from metal like behavior in low temperature to insulator like behavior at high temperature. As the temperature increases from 5K the pristine sample exhibit a small positive and nearly constant value of S till 172K. Then the value of S start to increase sharply and reaches a maximum value of ≈41μV/K at 234K and decreases rather sharply on further increase in temperature. The analysis of thermoelectric power data confirmed the validity of small polaron type conduction

  12. Resistivity and magnetoresistivity of amorphous rare-earth alloys

    Science.gov (United States)

    Borchi, E.; Poli, M.; De Gennaro, S.

    1982-05-01

    The resistivity and magnetoresistivity of amorphous rare-earth alloys are studied starting from the general approach of Van Peski-Tinbergen and Dekker. The random axial crystal-field and the magnetic correlations between the rare-earth ions are consistently taken into account. The characteristic features of the available experimental data are explained both of the case of random ferromagnetic and antiferromagnetic order.

  13. Tunneling magnetoresistance in granular cermet films with particle size distribution

    International Nuclear Information System (INIS)

    Vovk, A.Ya.; Golub, V.O.; Malkinski, L.; Kravets, A.F.; Pogorily, A.M.; Shypil', O.V.

    2004-01-01

    The correlation between tunneling magnetoresistance (TMR) and field sensitivity (dMR/dH) for granular films (Co 50 Fe 50 ) x -(Al 2 O 3 ) 1-x was studied. The position of TMR maximum is shifted towards the lower x in the higher applied magnetic fields. Such a behavior was observed for metal granular nanocomposites but is first reported for granular cermets. However the highest dMR/dH was found for the compositions just below the percolation threshold

  14. Magnetoresistive sensor for real-time single nucleotide polymorphism genotyping

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2014-01-01

    We demonstrate a magnetoresistive sensor platform that allows for the real-time detection of point mutations in DNA targets. Specifically, we detect point mutations at two sites in the human beta globin gene. For DNA detection, the present sensor technology has a detection limit of about 160p...... of magnetic beads, which enables real-time quantification of the specific binding of magnetic beads to the sensor surface under varying experimental conditions....

  15. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    Czech Academy of Sciences Publication Activity Database

    Galceran, R.; Fina, I.; Cisneros-Fernandez, J.; Bozzo, B.; Frontera, C.; Lopez-Mir, L.; Deniz, H.; Park, K.W.; Park, B.G.; Balcells, J.; Martí, Xavier; Jungwirth, Tomáš; Martínez, B.

    2016-01-01

    Roč. 6, Oct (2016), 1-6, č. článku 35471. ISSN 2045-2322 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  16. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  17. Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

    Czech Academy of Sciences Publication Activity Database

    Smrčka, Ludvík; Makarovsky, O. N.; Schemenchinskii, S. G.; Vašek, Petr; Jurka, Vlastimil

    2004-01-01

    Roč. 22, - (2004), s. 320-323 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/96/0036 Institutional research plan: CEZ:AV0Z1010914 Keywords : Si MOSFET * magnetoresistance * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  18. Enhanced magnetoresistance in the binary semimetal NbAs2 due to improved crystal quality

    Science.gov (United States)

    Yokoi, K.; Murakawa, H.; Komada, M.; Kida, T.; Hagiwara, M.; Sakai, H.; Hanasaki, N.

    2018-02-01

    We have observed an extremely large magnetoresistance exceeding 1.9 million at 1.7 K at 40 T for a single crystal of the binary semimetal NbAs2. The magnetoresistive behavior for this compound is quantitatively reproduced by a semiclassical two-carrier model in which the significant enhancement of magnetoresistance is attributed to the almost full compensation of the hole and electron densities (0.994 6 ×105cm2 /V .s ). Our results indicate that binary semimetals with higher carrier densities have a great potential for exhibiting a further divergent increase in magnetoresistance merely through an improvement in crystal quality.

  19. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

    Science.gov (United States)

    Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

    2017-08-23

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  20. Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

    International Nuclear Information System (INIS)

    Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

    1995-01-01

    The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

  1. Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system

    International Nuclear Information System (INIS)

    Wang, C M; Lei, X L

    2014-01-01

    We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. (paper)

  2. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  3. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  4. Negative magnetoresistance in Dirac semimetal Cd3As2.

    Science.gov (United States)

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-08

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 10(17) cm(-3) at 300 K to 2.2 × 10(16) cm(-3) below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

  5. Magnetoresistance and magnetic breakdown phenomenon in amorphous magnetic alloys

    International Nuclear Information System (INIS)

    Chen Hui-yu; Gong Xiao-yu

    1988-01-01

    Transverse magnetoresistance in amorphous magnetic alloys (Fe/sub 1-//sub x/CO/sub x/) 82 Cu/sub 0.4/Si/sub 4.4/B/sub 13.2/ were measured at room temperature and in the magnetic field range 0--15 kOe. For large magnetic field, three different functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) Δrho/rho approaches saturation. (2) Δrho/rho increases proportionally to H 2 . (3) For x = 0.15, a sharp Δrho/rho peak appears at a certain magnetic field strength in spatial angular orientation of both magnetic field and electric currents. Case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and width of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current

  6. Anisotropic giant magnetoresistance in NbSb2

    Science.gov (United States)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  7. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  8. Magnetism and infrared magnetotransmission of Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} manganite in nanostate

    Energy Technology Data Exchange (ETDEWEB)

    Loshkareva, N.N., E-mail: loshkareva@imp.uran.ru; Mostovshchikova, E.V.; Korolyov, A.V.; Naumov, S.V.; Gizhevskii, B.A.; Solin, N.I.; Naumova, L.I.; Telegin, S.V.; Elokhina, L.V.

    2013-09-15

    The magnetic properties of nanopowders of Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} manganite, obtained by ball milling method, and IR magnetotransmission (the relative change in transmission of infrared radiation in a magnetic field) of composites based on the nanopowders are studied and compared with properties of Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} single crystal and coarse grain powder. The strong decrease of the magnetization at transformation of the single crystal to coarse grain powder is associated with the martensitic nature of the charge-ordered state (CO), T{sub CO}∼150 K. With a further decrease of particles size the magnetization decreases sharply above 150 K and is less significant in the region below 150 K, where a plateau in temperature dependence of magnetization and magnetotransmission takes place. The plateau is explained by modification of the manganite properties at milling and associated with competition of the ferromagnetic and antiferromagnetic contributions in cores and surface of the nanoparticles and change in the degree of localization of charge carriers in the magnetic field. The high value of the magnetotransmission (up to 9%) in a wide temperature range for nanocomposites are promising for creation of magnetically controlled infrared optoelectronic devices. - Highlights: • Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} nanopowders were obtained by the ball-milling method. • Difference in the magnetic properties of nanopowders and bulk crystals was revealed. • High value of IR magnetotransmition of Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} nanocomposites was found. • Relationship between magnetism and magnetotransmition of nano-Nd{sub 0.5}Sr{sub 0.5}MnO{sub 3} is shown.

  9. Fabrication of Polycrystalline Lanthanum Manganite (La0.99 Mn0.01 O3) Powder and Fibres by Electrospinning Method

    International Nuclear Information System (INIS)

    Yin Yin Win; That Htar Lwin; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Lanthanum manganite (La0.99 Mn0.01 O3) powder have been prepared by using pyrolysis methods. Lanthanum manganite fibres were successfully fabricated by electro-spinning utilizing precursors. Polycrystalline perovskite structure lanthanum manganite powder and fibres showed that the grain size and crystal grain increased significantly with the increase in calcination temperature. A variety of techniques (SEM, FT-IR and TG-DTA) were employed to study the morphology and fibre quality, crystal structure, and thermal analysis of La0.99 Mn0.01 O3 specimen respectively.

  10. Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta₄Pd₃Te₁₆ superconductor.

    Science.gov (United States)

    Xu, Xiaofeng; Jiao, W H; Zhou, N; Guo, Y; Li, Y K; Dai, Jianhui; Lin, Z Q; Liu, Y J; Zhu, Zengwei; Lu, Xin; Yuan, H Q; Cao, Guanghan

    2015-08-26

    We report on the quasi-linear in field intrachain magnetoresistance in the normal state of a quasi-one-dimensional superconductor Ta4Pd3Te16 (Tc ~ 4.6 K). Both the longitudinal and transverse in-chain magnetoresistance shows a power-law dependence, Δρ∝B(α) with the exponent α close to 1 over a wide temperature and field range. The magnetoresistance shows no sign of saturation up to 50 T studied. The linear magnetoresistance observed in Ta4Pd3Te16 is found to be overall inconsistent with the interpretations based on the Dirac fermions in the quantum limit, charge conductivity fluctuations as well as quantum electron-electron interference. Moreover, it is observed that the Kohler's rule, regardless of the field orientations, is violated in its normal state. This result suggests the loss of charge carriers in the normal state of this chain-containing compound, due presumably to the charge-density-wave fluctuations.

  11. Magnon Broadening Effects in Double Layered Manganite La_1.2 Sr_1.8 Mn_2 O_7

    OpenAIRE

    Furukawa, Nobuo; Hirota, Kazuma

    1999-01-01

    Magnon linewidth of La_1.2 Sr_1.8 Mn_2 O_7 near the Brillouin zone boundary is investigated from both theoretical and experimental points of view. Abrupt magnon broadening is ascribed to a strong magnon-phonon coupling. Magnon broadening observed in cubic perovskite manganites is also discussed.

  12. Impact of Annealing Temperature on the Physical Properties of the Lanthanum Deficiency Manganites

    Directory of Open Access Journals (Sweden)

    Skini Ridha

    2017-10-01

    Full Text Available The lanthanum deficiency manganites La0.8-x□xCa0.2MnO3 (x = 0, 0.1 and 0.2, where □ is a lanthanum vacancy, were prepared using the classic ceramic methods with different thermal treatments (1373 K and 973 K. The structural, magnetic, and magnetocaloric properties of these compounds were studied as a function of annealing temperature. It was noted that the annealing temperature did not affect the crystal structure of our samples (orthorhombic structure with Pnma space group. Nevertheless, a change in the variation of the unit cell volume V, the average bond length dMn–O, and the average bond angles θMn–O–Mn were observed. Magnetization versus temperature study has shown that all samples exhibited a magnetic transition from ferromagnetic (FM to paramagnetic (PM phase with increasing temperature. However, it can be clearly seen that the annealing at 973 K induced an increase of the magnetization. In addition, the magnetocaloric effect (MCE as well as the relative cooling power (RCP were estimated. As an important result, the values of MCE and RCP in our Lanthanum-deficiency manganites are reported to be near to those found in gadolinium, considered as magnetocaloric reference material.

  13. Structural and electronic transformations in substituted La-Sr manganites depending on cations and oxygen content

    Science.gov (United States)

    Karpasyuk, Vladimir; Badelin, Alexey; Merkulov, Denis; Derzhavin, Igor; Estemirova, Svetlana

    2018-05-01

    In the present research experimental data are obtained for the Jahn-Teller O‧ phase formation, phase transformation "orthorhombic-rhombohedral structure" and the change of the conductance type in the systems of manganites La3+1-c+xSr2+c-xMn3+1-c-x-2γMn4+c+2γZn2+xO3+γ, La3+1-c-xSr2+c+xMn3+1-c-x-2γMn4+c+2γGe4+xO3+γ, La3+1-cSr2+cMn3+1-x-c-2γMn4+c+2γ(Zn2+0.5Ge4+0.5)xO3+γ, where Mn4+ ions concentration is independent of "x". Ceramic samples were sintered in air at 1473 K. As-sintered samples had an excess of oxygen content. In order to provide stoichiometric oxygen content, the samples were annealed at 1223 K and partial pressure of oxygen PO2 = 10-1 Pа. Structural characteristics of the O‧ phase were obtained. The position of the phase boundary "orthorhombic-rhombohedral structure" and the temperature of the conductance type change depending on the cation composition of manganites and oxygen content were determined. Possible approaches to the interpretation of experimental results were suggested.

  14. Tunneling magnetoresistance in nanogranular La1-xSrxMnO3 (x∼0.5

    Directory of Open Access Journals (Sweden)

    Jiří Hejtmánek

    2017-05-01

    Full Text Available Electric transport and magnetic studies were performed on the La1-xSrxMnO3 (x=0.45-0.55 perovskite manganites. The main focus was given to the nanogranular ceramics of average x=0.47 composition, compacted by spark plasma sintering of molten salt synthesized nanoparticles. This sample can be viewed as a two-phase composite where FM manganite granules are embedded in AFM manganite matrix. The magnetoconductance data observed on this sample reveal a coexistence of distinct low- and high-field contributions, related to the field-induced alignment of ferromagnetic (FM granules and the spin canting in antiferromagnetic (AFM matrix, respectively. Their analysis confirms the theoretically predicted scaling of the low-field effect with squared reduced magnetization and provides also a quantitative comparison between the linear coefficient of high-field magnetoconductance and paraprocess seen in the magnetization measurement.

  15. Terahertz–infrared electrodynamics of overdoped manganites La.sub.1-x./sub.Ca.sub.x./sub.MnO.sub.3./sub

    Czech Academy of Sciences Publication Activity Database

    Kadyrov, L.S.; Gorshunov, B.P.; Zhukova, E.S.; Torgashev, V. I.; Prokhorov, A. S.; Motovilova, E.A.; Fischgrabe, F.; Moshnyaga, V.T.; Zhang, T.; Kremer, R. K.; Pracht, U.; Zapf, S.; Pokorný, Jan; Untereiner, G.; Kamba, Stanislav; Dressel, M.

    2014-01-01

    Roč. 87, 10-11 (2014), s. 1050-1059 ISSN 0141-1594 Institutional support: RVO:68378271 Keywords : manganites * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.954, year: 2014

  16. Comparative Study of Magnetic Ordering and Electrical Transport in Bulk and Nano-Grained Nd{sub 0.67}Sr{sub 0.33}MnO{sub 3} Manganites

    Energy Technology Data Exchange (ETDEWEB)

    Arun, B. [Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Trivandrum (India); Academy of Scientific and Innovative Research (AcSIR), CSIR, Trivandrum (India); Suneesh, M.V. [Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Trivandrum (India); Vasundhara, M., E-mail: vasu.mutta@gmail.com [Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Trivandrum (India)

    2016-11-15

    We have prepared bulk and nano-sized Nd{sub 0.67}Sr{sub 0.33}MnO{sub 3} manganites by solid state and low-temperature mild solgel methods respectively. Both the compounds crystallized into an orthorhombic structure with Pbnm space group confirmed from Rietveld refinement of X-ray powder diffraction patterns. Nano-grained compound shows an average particle size of 22 nm with broad grain size distribution revealed from the Transmission electron micrographs. It appeared that the long range ferromagnetic order becomes unstable upon the reduction of the samples dimension down to nano meter scale. DC magnetization and AC susceptibility results showed frustration of spins in nano-grained compound and thereby it could lead to a cluster glass-like behaviour. Temperature dependence of electrical resistivity under different magnetic fields shows the broad maxima at higher temperatures and a low temperature upturn in both the compounds, however, the latter is more prominent in the nano grained compound. Combination of Kondo effect with electron and phonon interactions govern the low temperature resistivity and a small polaron hopping mechanism dominates at high temperatures for both the compounds. The magnetoresistance is understood by the effect of spin polarized tunneling through the grain boundary. The experimental results revealed that the reduction in particle size influences severely on the magnetic, electrical and magneto transport properties. - Highlights: • Long range ferromagnetic ordered state become unstable in case of nano compound. • It shows broad magnetic transition and cluster glass nature. • Kondo effect with electron-phonon interactions dominate the resistivity at low temperature.

  17. Study of annealing effects on the giant magnetoresistance in ferromagnetic alloys

    International Nuclear Information System (INIS)

    Ju Sheng; Li Zhenya

    2005-01-01

    A self-consistent macroscopic theory is developed to improve on that of Gu et al (1996 Phys. Rev. B 53 11685) and to provide a physical understanding of some new experimental observations in ferromagnetic alloys. For composites with non-spherical inclusions, which is the general case in artificial granular systems, previous models based on the calculation of a spherical particle in the dilute limit are inadequate. By considering the particle shape distribution and its evolution with annealing effects, we have studied the shape dependence of the giant magnetoresistance (GMR) in ferromagnetic alloys. It is found that both the particle shape and its orientation are effective factors in determining the magnitude of the GMR. Based on a comparison between our calculations and experimental data, a comprehensive picture of the effects of annealing on GMR is obtained

  18. Angular dependencies of longitudinal magnetoresistivity and planar Hall effect of single and multilayered thin films

    International Nuclear Information System (INIS)

    Ko, T.W.; Lee, J.H.; Park, B.K.; Rhie, K.; Jang, P.W.; Hwang, D.G.; Lee, S.S.; Kim, M.Y.; Rhee, J.R.

    1998-01-01

    Magnetoresistivity and planar Hall effect of a Glass/Fe70A/[Co21A/Cu25A] 20 multilayer coupled antiferromagnetically a single layer (Co81Nb19) thin film, and NiO based Glass/Ni350A/Py50A/Cu20A/Py50A (Py = Ni 83 Fe 17 ) spin value are studied. Planar Hall resistivity is analysed concurrently with the resistivity of the sample. With variation of direction and strength of the applied fields, we found that the magnetization process affects significantly the planar Hall effect. We developed a simple method to find the easy axis of single layer magnetic thin films. We also observed the variation of magnetization of each layer separately for an antiferromagnetically coupled multilayer, and a NiO-based spin value with the planar Hall effect. (author)

  19. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  20. Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te

    International Nuclear Information System (INIS)

    Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

    2016-01-01

    Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.

  1. Anomalous magnetisation process in UFe4Al8 probed by magnetisation and magnetoresistance

    International Nuclear Information System (INIS)

    Godinho, M.; Estrela, P.; Goncalves, A.P.; Almeida, M.; Spirlet, J.C.; Bonfait, G.

    1996-01-01

    A strong anisotropic magnetoresistance has been measured in a single crystal of UFe 4 Al 8 and has been used to prove the ferromagnetic order of the U lattice. The giant anomaly detected in the magnetoresistance curves is interpreted as two 90 rotations of the magnetisation. This interpretation has been confirmed by magnetisation measurements. (orig.)

  2. Structural and magnetotransport properties of the Y doped A-site deficient double layered manganites La{sub 1.2−x}□{sub 0.2}Y{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Mahamdioua, N., E-mail: mahamdioua.nabil@gmail.com [LEND, Faculty of Science and Technology, Jijel University, Jijel 18000 (Algeria); Amira, A. [LEND, Faculty of Science and Technology, Jijel University, Jijel 18000 (Algeria); Altintas, S.P. [Department of Physics, Faculty of Arts and Sciences, AIB University, Bolu 14280 (Turkey); Koc University, Surface Science and Technology Center (KUYTAM), 34450-Sariyer, Istanbul (Turkey); Varilci, A.; Terzioglu, C. [Department of Physics, Faculty of Arts and Sciences, AIB University, Bolu 14280 (Turkey)

    2016-08-15

    We present structural, magnetic and electrical properties of the polycrystalline A-site-deficient yttrium doped double layered manganites La{sub 1.2−x}□{sub 0.2}Y{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7} (x=0.2, 0.3 and 0.4) prepared by a solid state reaction method. The samples crystallize in the tetragonal structure with the space group I4/mmm. Doping with Y decreases the cell parameters and causes a decrease of the metal-insulator transition temperature. The same evolution with doping is also seen for the deduced Curie temperature from susceptibility curves which present a clear paramagnetic-ferromagnetic transition. The significant positive intrinsic magnetoresistance, shown in all samples, reaches 85% at 122 K under 7 T for 0.3 doped sample and can be attributed to the suppression of spin fluctuations via aligning the spins under external magnetic field, while the extrinsic one is attributed to the inter-grain spin-polarized tunneling across the grain boundaries. The simulation of the resistivity curves in the entire temperature range show that the percolation model is suitable to fit our results. The applied magnetic field increases the density of states near the Fermi level, which is in accordance with the observed decrease of resistivity. - Graphical abstract: Resistivity and magnetoresistance of La{sub 1.2−x}□{sub 0.2}Y{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7} (x=0.2, 0.3, 0.4). Solid lines correspond to the fitting results. Display Omitted.

  3. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    Energy Technology Data Exchange (ETDEWEB)

    Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)

    2017-04-15

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  4. Giant current-perpendicular-to-plane magnetoresistance in multilayer graphene as grown on nickel.

    Science.gov (United States)

    Bodepudi, S C; Singh, A P; Pramanik, S

    2014-05-14

    Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).

  5. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    International Nuclear Information System (INIS)

    Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.

    2017-01-01

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  6. 3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

    International Nuclear Information System (INIS)

    Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno

    2008-01-01

    We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed

  7. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun

    2012-01-05

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  8. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun; Stepanyuk, V. S.; Rungger, I.; Sanvito, S.

    2012-01-01

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  9. The electrical conductivity and longitudinal magnetoresistance of metallic nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Moraga, Luis, E-mail: luismoragajaramillo@gmail.com [Universidad Central de Chile, Toesca 1783, Santiago 8370178 (Chile); Henriquez, Ricardo, E-mail: rahc.78@gmail.com [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Bravo, Sergio, E-mail: bravo.castillo.sergio@gmail.com [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Solis, Basilio, E-mail: bsolis1984@gmail.com [Argelander-Institut für Astronomie, Auf dem Hügel 71, 53121 Bonn (Germany)

    2017-03-01

    Proceeding from exact solutions of the Boltzmann transport equation in the relaxation time approximation, we present formulas for the electrical conductivity and longitudinal magnetoresistance of single-crystalline cylindrical nanotubes. The effects of surface scattering are taken into account by introducing different specularity parameters at the inner and outer surfaces. For small values of the inner diameter, these formulas reduce to the respective expressions for cylindrical nanowires. It is found that the existing measurements of the resistivity of nanotubes (Venkata Kamalakar and Raychaudhuri, New J. Phys. 14, 043032 (2012)) can be accurately described by this formalism.

  10. Fusion-neutron effects on magnetoresistivity of copper stabilizer materials

    International Nuclear Information System (INIS)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-01-01

    The objective of this work is to quantify the changes which occur in the magnetoresistivity of coppers (having various purities and pretreatments, and at magnetic fields up to 12 T during the course of sequential fusion neutron irradiations at about 4 0 K and anneals to room temperature. In conjunction with work in progress by Coltman and Klabunde of ORNL, the results should lead to engineering design data for the stabilizers of superconducting magnets in fusion reactors. These magnets are expected to be irradiated during reactor operation and warmed to room temperature periodically during maintenance

  11. Fusion-neutron effects on magnetoresistivity of copper stabilizer materials

    Energy Technology Data Exchange (ETDEWEB)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-02-24

    The objective of this work is to quantify the changes which occur in the magnetoresistivity of coppers (having various purities and pretreatments, and at magnetic fields up to 12 T during the course of sequential fusion neutron irradiations at about 4/sup 0/K and anneals to room temperature. In conjunction with work in progress by Coltman and Klabunde of ORNL, the results should lead to engineering design data for the stabilizers of superconducting magnets in fusion reactors. These magnets are expected to be irradiated during reactor operation and warmed to room temperature periodically during maintenance.

  12. Magnetoresistance of UPdSn and pressure effect

    Czech Academy of Sciences Publication Activity Database

    Honda, F.; Alsmadi, A.; Nakotte, H.; Kamarád, Jiří; Sechovský, V.; Lacerda, A. H.; Mihálik, M.

    2003-01-01

    Roč. 34, č. 2 (2003), s. 1197-1200 ISSN 0587-4254. [International Conference on Strongly Correlated Electron Systems (SCES 02). Cracow, 10.07.2002-13.07.2002] R&D Projects: GA ČR GP202/01/D045; GA ČR GA106/02/0943 Grant - others:NSF(US) DMR-0094241; NSF(US) INT-9722777 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetoresistance * UPdSn * pressure effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.752, year: 2003

  13. Tunneling anisotropic magnetoresistance via molecular π orbitals of Pb dimers

    Science.gov (United States)

    Schöneberg, Johannes; Ferriani, Paolo; Heinze, Stefan; Weismann, Alexander; Berndt, Richard

    2018-01-01

    Pb dimers on a ferromagnetic surface are shown to exhibit large tunneling anisotropic magnetoresistance (TAMR) due to molecular π orbitals. Dimers oriented differently with respect to the magnetization directions of a ferromagnetic Fe double layer on W(110) were made with a scanning tunneling microscope. Depending on the dimer orientations, TAMR is absent or as large as 20% at the Fermi level. General arguments and first-principles calculations show that mixing of molecular orbitals due to spin-orbit coupling, which leads to TAMR, is maximal when the magnetization is oriented parallel to the dimer axis.

  14. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  15. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  16. Current perpendicular to plane giant magnetoresistance in laminated nanostructures

    International Nuclear Information System (INIS)

    Vedyayev, A.; Zhukov, I.; Dieny, B.

    2005-01-01

    We theoretically studied spin-dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of giant magnetoresistance (GMR). This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones even though lamination induces a significant increase in CPP resistance

  17. Investigation of transport properties of colossal magnetoresistive materials

    International Nuclear Information System (INIS)

    Kaurav, Netram

    2006-01-01

    The transport properties, i.e. resistivity, heat capacity, thermal conductivity and optical conductivity have been theoretically analysed for colossal magnetoresistive materials within the framework of double exchange mechanism. Following an effective interaction potential, we deduce acoustic (optical) phonon modes, coupling strength for electron-phonon and phonon-impurities, the phonon (magnon) scattering rate and constants characterise the scattering of charge and heat carriers with various disorders in the crystal. The theoretical models have been developed to account the anomalies observed in the transport phenomenon. It is noticed that electron-electron, electron-phonon and electron-magnon interactions are essential in discussing the transport behaviour of doped magnetites. (author)

  18. Positive magnetoresistance in Fe3Se4 nanowires

    Science.gov (United States)

    Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

    2011-04-01

    We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

  19. Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

    Science.gov (United States)

    Ulloa, Camilo; Duine, R. A.

    2018-04-01

    Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

  20. Magneto-resistive and spin valve heads fundamentals and applications

    CERN Document Server

    Mallinson, John C

    2002-01-01

    This book is aims to be a comprehensive source on the physics and engineering of magneto-resistive heads. Most of the material is presented in a nonmathematical manner to make it more digestible for researchers, students, developers, and engineers.In addition to revising and updating material available in the first edition, Mallinson has added nine new chapters dealing with various aspects concerning spin valves, the electron spin tunneling effect, the electrostatic discharge effects, read amplifiers, and signal-to-noise ratios, making this a completely up-to-date reference.Th

  1. Magnetoresistance peculiarities of bismuth wires in high magnetic field

    Science.gov (United States)

    Condrea, E.; Gilewski, A.; Nicorici, A.

    2016-03-01

    Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found.

  2. Anisotropic magnetoresistance components in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Vašek, Petr; Novák, Vít; Olejník, Kamil; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2007-01-01

    Roč. 99, č. 14 (2007), 147207/1-147207/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 Grant - others:UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  3. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Makarovsky, O. N.; Khalid, M.N.; Yasin, S.; Edmonds, K. W.; Campion, R. P.; Wunderlich, J.; Jungwirth, Tomáš; Williams, D.A.; Gallagher, B. L.; Foxon, C. T.

    2008-01-01

    Roč. 10, č. 8 (2008), 085004/1-085004/9 ISSN 1367-2630 R&D Projects: GA ČR GEFON/06/E002; GA MŠk LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance , Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  4. Towards a magnetoresistive platform for neural signal recording

    Science.gov (United States)

    Sharma, P. P.; Gervasoni, G.; Albisetti, E.; D'Ercoli, F.; Monticelli, M.; Moretti, D.; Forte, N.; Rocchi, A.; Ferrari, G.; Baldelli, P.; Sampietro, M.; Benfenati, F.; Bertacco, R.; Petti, D.

    2017-05-01

    A promising strategy to get deeper insight on brain functionalities relies on the investigation of neural activities at the cellular and sub-cellular level. In this framework, methods for recording neuron electrical activity have gained interest over the years. Main technological challenges are associated to finding highly sensitive detection schemes, providing considerable spatial and temporal resolution. Moreover, the possibility to perform non-invasive assays would constitute a noteworthy benefit. In this work, we present a magnetoresistive platform for the detection of the action potential propagation in neural cells. Such platform allows, in perspective, the in vitro recording of neural signals arising from single neurons, neural networks and brain slices.

  5. Magnetoresistive nanojunctions fabricated via focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Stefanescu, E.; Hong, J.; Guduru, R. [Florida International University (United States); Lavrenov, A. [Hitachi Research (United States); Litvinov, D. [University of Houston, Center for Nanomagnetic Systems (United States); Khizroev, S., E-mail: khizroev@fiu.edu [Florida International University (United States)

    2013-01-15

    Focused ion beam (FIB) is used to implant Ga{sup +} ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 Micro-Sign m to {approx}80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of {approx}10{sup 3} ions/cm{sup 2} at a 1-pA FIB current is sufficient to fully 'de-activate' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

  6. Giant magnetoresistance (GMR) sensors from basis to state-of-the-art applications

    CERN Document Server

    Reig, Candid; Mukhopadhyay, Subhas Chandra

    2013-01-01

    Since the discovery of the giant magnetoresistance (GMR) effect in 1988, spintronics has been presented as a new technology paradigm, awarded by the Nobel Prize in Physics in 2007. Initially used in read heads of hard disk drives, and while disputing a piece of the market to the flash memories, GMR devices have broadened their range of usage by growing towards magnetic field sensing applications in a huge range of scenarios. Potential applications at the time of the discovery have become real in the last two decades. Definitively, GMR was born to stand. In this sense, selected successful approaches of GMR based sensors in different applications: space, automotive, microelectronics, biotechnology … are collected in the present book. While keeping a practical orientation, the fundamentals as well as the current trends and challenges of this technology are also analyzed. In this sense, state of the art contributions from academy and industry can be found through the contents. This book can be used by starting ...

  7. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  8. Magnetoresistance effects in hybrid semiconductor devices

    NARCIS (Netherlands)

    Schoonus, J.J.H.M.

    2008-01-01

    Until recently, mainstream electronics was exclusively based on charge proper- ties. Apart from charge, an electron also possesses an intrinsic angular momen- tum (spin), and directly coupled to that a magnetic moment. A newly emerg- ing approach is to use this extra spin degree of freedom to

  9. Experimental elucidation: microscopic mechanism of resonant X-ray scattering in manganite films

    CERN Document Server

    Ohsumi, H; Kiyama, T

    2003-01-01

    Resonant X-ray scattering experiments have been performed on perovskite manganite La sub 0 sub . sub 5 Sr sub 0 sub . sub 5 MnO sub 3 thin films, which are grown on three distinct perovskite with a coherent epitaxial strain and have a forced ferro-type orbital ordering of Mn 3d orbitals. Using an interference technique, we have successfully observed the resonant X-ray scattering signal from the system having the ferro-type orbital ordering and also revealed the energy scheme of Mn 4p bands. For the forced ferro-type orbital ordering system, the present results evidence that the resonant X-ray scattering signal originates from the band structure effect due to the Jahn-Teller distortion of a MnO sub 6 octahedron, and not from the Coulomb interaction between 3d and 4p electrons. (author)

  10. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio; Colizzi, G.; Filippetti, A.; Fiorentini, Vincenzo; Schwingenschlö gl, Udo

    2013-01-01

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  11. Non-conventional ordering studied by magnetic resonance in Fe-doped manganites

    International Nuclear Information System (INIS)

    Gutierrez, J.; Siruguri, V.; Barandiaran, J.M.; Pena, A.; Lezama, L.; Rojo, T.

    2006-01-01

    Coexistence of ferromagnetic (FM) and paramagnetic (PM) phases in La 0.7 Pb 0.3 (Mn 1-x Fe x )O 3 (0.1=< x=<0.3) manganites is studied by the electron spin resonance (ESR) technique. Doping with Fe gives rise to a progressive decrease both in the low-temperature magnetic moment and magnetic order temperature values. Obtained spectra show narrow resonance signals above Curie temperature that transform to asymmetric Dyson-like signals as temperature decreases. The evolution of line width with temperature shows minima that correlate directly with the obtained paramagnetic Curie temperatures. Analysis of spectra above and below magnetic order temperatures reveals features of complex PM to FM transitions and coexistence of both type of phases in a wide range of temperatures

  12. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    Science.gov (United States)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-07-01

    We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

  13. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    International Nuclear Information System (INIS)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-01-01

    We report the frequency-dependent conductivity of the manganite system La 1-x Sr x MnO 3 (x≤0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  14. Effect of quenched disorder on charge-orbital-spin ordering in single-layer manganites

    International Nuclear Information System (INIS)

    Uchida, Masaya; Mathieu, Roland; He, Jinping; Kaneko, Yoshio; Tokura, Yoshinori; Asamitsu, Atsushi; Kumai, Reiji; Tomioka, Yasuhide; Matsui, Yoshio

    2006-01-01

    Structural and magnetic properties have been investigated for half-doped single-layer manganites RE 0.5 Sr 1.5 MnO 4 [RE=La, (La, Pr), Pr, Nd, Sm, and Eu]. Analyses of electron diffraction and ac susceptibility measurements have revealed that the long-range charge-orbital ordering (CO-OO) state as observed in La 0.5 Sr 1.5 MnO 4 is suppressed for the other materials: the CO-OO transition temperature, as well as the correlation length decreases with a decrease in the cation size of RE. Such a short-range CO-OO state shows a spin-glass behavior at low temperatures. A new electronic phase diagram is established with quenched disorder as the control parameter. (author)

  15. Structural studies of spinel manganite ceramics with positron annihilation lifetime spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Klym, H; Shpotyuk, O; Hadzaman, I [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Ingram, A [Opole University of Technology, 75 Ozimska str., Opole, 45370 (Poland); Filipecki, J, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Institute of Physics of Jan Dlugosz University, 13/15 Armii Krajowei, 42201, Czestochowa (Poland)

    2011-04-01

    The new transition-metal manganite Cu{sub 0.1}Ni{sub 0.8}Co{sub 0.2}Mn{sub 1.9}O{sub 4} ceramics for temperature sensors with improved functional reliability are first proposed. It is established that the amount of additional NiO phase in these ceramics extracted during sintering play a decisive role. This effect is well revealed only in ceramics having a character fine-grain microstructure, while the monolithization of ceramics caused by great amount of transferred thermal energy reveals an opposite influence. The process of monolitization from the position of evolution of grain-pore structure was studied in these ceramics using positron annihilation lifetime spectroscopy.

  16. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio

    2013-06-21

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  17. Transport and ordering of polarons in CER manganites PrCaMnO

    International Nuclear Information System (INIS)

    Schramm, S; Hoffmann, J; Jooss, Ch

    2008-01-01

    The temperature-dependent resistivity and the colossal resistance effect induced by strong electric fields of the small-band Pr 1-x Ca x MnO 3 (PCMO) manganites are analysed with respect to the influence of the Ca doping, post-annealing, the prehistory of the electric stimulation, and the physical dimensions of the sample. Despite the phase separation between charge and orbital ordered and disordered phases, PCMO reveals the properties of a homogeneous medium with a conductivity governed by the hopping of small polarons if the electric field is not too strong. In contrast, high electric fields induce a structural transition which gives rise to a glassy behaviour in the transient regime. In the low resistance state the small activation energy of charge carrier hopping implies a transition to large polaron hopping

  18. Monte Carlo simulations of magnetic order in Fe-doped manganites

    International Nuclear Information System (INIS)

    Alonso, J.; Gutierrez, J.; Barandiaran, J.M.; Bermejo, F.J.; Brey, L.

    2008-01-01

    The effect of Fe doping on the magnetic properties of La 0.7 Pb 0.3 Mn 1-x Fe x O 3 (x=0, 0.05, 0.1, 0.15 and 0.2) manganites is studied by the Monte Carlo simulation technique. As a first approximation, by means of a simple Heisenberg Hamiltonian, experimental normalized magnetizations at low temperatures have been reproduced for concentrations of Fe (x<0.2), but the calculated order temperatures show a large deviation from the measured ones. This shortcoming can be corrected by using a one electron effective hopping semi-classical Hamiltonian, with a simplified expression for the kinetic energy of the free electrons, which also avoids time-consuming diagonalizations

  19. Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

    Science.gov (United States)

    Cheng, Shaobo; Zhang, Dong; Deng, Shiqing; Li, Xing; Li, Jun; Tan, Guotai; Zhu, Yimei; Zhu, Jing

    2018-04-01

    Topological defects and their interactions often arouse multiple types of emerging phenomena from edge states in Skyrmions to disclination pairs in liquid crystals. In hexagonal manganites, partial edge dislocations, a prototype topological defect, are ubiquitous and they significantly alter the topologically protected domains and their behaviors. Herein, combining electron microscopy experiment and graph theory analysis, we report a systematic study of the connections and configurations of domains in this dislocation embedded system. Rules for domain arrangement are established. The dividing line between domains, which can be attributed by the strain field of dislocations, is accurately described by a genus model from a higher dimension in the graph theory. Our results open a door for the understanding of domain patterns in topologically protected multiferroic systems.

  20. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.