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Sample records for low-voltage avalanche photodiodes

  1. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  2. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  3. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  4. Avalanche photodiodes for ISABELLE detectors

    International Nuclear Information System (INIS)

    Strand, R.C.

    1979-01-01

    At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

  5. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  6. Geiger mode avalanche photodiodes for microarray systems

    Science.gov (United States)

    Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

    2002-06-01

    New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

  7. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  8. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  9. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  10. Large area avalanche MRS-photodiodes for nuclear spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ermalitski, F A; Zalesski, V B

    1996-12-31

    Problems of application of avalanche photodiodes (APD) in readout systems of nuclear spectrometers are considered. APD`s with a large sensitive area of a diameter 1-5 mm and a high multiplication coefficient 200-1000 are created. MPS-photodiodes provide for the energy resolution 80% at temperature 231 K for detecting gamma-quanta with energy 662 keV. 4 refs.

  11. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

    1980-01-01

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  12. Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

    2011-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

  13. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.

    2010-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  14. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  15. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  16. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Fenker, H.; Thomas, J.

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  17. Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

    Science.gov (United States)

    Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

    2018-02-01

    Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

  18. Avalanche photodiode based time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C. [Southwest Research Institute, 6220 Culebra Road, San Antonio, Texas 78238 (United States)

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  19. An excess noise measurement system for weak responsivity avalanche photodiodes

    Science.gov (United States)

    Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

    2018-06-01

    A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

  20. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  1. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  2. Readout of scintillator light with avalanche photodiodes for positron emission tomography

    International Nuclear Information System (INIS)

    Chen, Ruru; Fremout, A.; Tavernier, S.; Bruyndonckx, P.; Clement, D.; Loude, J.-F.; Morel, C.

    1999-01-01

    The noise properties and other relevant characteristics of avalanche photodiodes have been investigated with the perspective of replacing photomultiplier tubes in positron emission tomography. It is clearly demonstrated that they are a valid alternative to photomultiplier tubes in this application

  3. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    Science.gov (United States)

    Wegrzecka, Iwona; Wegrzecki, Maciej

    1999-04-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  4. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  5. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  6. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  7. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Boccone, V.; Aguilar, J.A.; Della Volpe, D.; Christov, A.; Montaruli, T.; Rameez, M.; Basili, A.

    2013-06-01

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm 2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (V ov ). Optical crosstalk and

  8. Scintillation detector composed by new type of avalanche photodiode and CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Using S5345 type of avalanche photodiode produced by Hamamatsu for the CsI(Tl) crystal readout, the spectrum of γ ray were measured. Energy resolution of 6.8% for 1.27 MeV γ ray from 22 Na source was obtained. The relation between energy resolution and coupling area, dimension of crystal, shaping time and bias were measured

  9. Study on the property of the avalanche photodiode as the readout component for scintillation crystals

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Zhu Guoyi; Mao Yufang; Dong Xiaoli; Li Zuhao

    1996-01-01

    The new avalanche photodiode (APD) and a CsI(Tl) crystal formed a scintillation detector. The energy spectrum of γ rays was measured by this detector. The measured results were compared with that measured by photomultiplier. Our plan is to use APD as PbWO 4 readout component for forward luminosity electromagnetic calorimeter at τ-C factory

  10. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  11. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  12. Proof-of-concept and feasibility demonstrations for an avalanche photodiode/photoelastic modulator-based imaging polarimeter

    Data.gov (United States)

    National Aeronautics and Space Administration — Building on the successful heritage of JPL’s Multiangle SpectroPolarimetric Imager (MSPI), we propose infusing HgCdTe avalanche photodiode (APD) array technology...

  13. Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

    Science.gov (United States)

    Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

    2017-10-01

    In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

  14. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland)]. E-mail: Ilia.britvitch@psi.ch; Johnson, I. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Renker, D. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stoykov, A. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Lorenz, E. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland); Max Planck Institute for Physics, 80805 Munich (Germany)

    2007-02-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

  15. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    International Nuclear Information System (INIS)

    Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

    2007-01-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate

  16. X-ray spectrometry with Peltier-cooled large area avalanche photodiodes

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Lopes, J.A.M.; Santos, J.M.F. dos; Conde, C.A.N.

    2004-01-01

    Performance characteristics of the response of a Peltier-cooled large-area avalanche photodiode are investigated. Detector gain, energy linearity, energy resolution and minimum detectable energy are studied at different operation temperatures. Detector energy resolution and lowest detectable X-ray energy present a strong improvement as the operation temperature is reduced from 25 to 15 deg. C and slower improvements are achieved for temperatures below 10 deg. C

  17. High speed, wide dynamic range analog signal processing for avalanche photodiode

    CERN Document Server

    Walder, J P; Pangaud, P

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  18. High speed, wide dynamic range analog signal processing for avalanche photodiode

    International Nuclear Information System (INIS)

    Walder, J.P.; El Mamouni, Houmani; Pangaud, Patrick

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented

  19. High speed, wide dynamic range analog signal processing for avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Walder, J.P. E-mail: walder@in2p3.fr; El Mamouni, Houmani; Pangaud, Patrick

    2000-03-11

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  20. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  1. Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry

    International Nuclear Information System (INIS)

    Hobbs, M J; Tan, C H; Willmott, J R

    2013-01-01

    We report the evaluation of Si avalanche photodiodes (APDs) for use in radiation thermometry as an alternative to Si photodiodes. We compared their performance when operated under phase sensitive detection (PSD), where the signal is modulated, and direct detection (DD) methods. A Si APD was compared with a Si photodiode with reference black body temperatures of 275 to 600°C, in terms of the mean output voltage and signal-to-noise ratio (SNR), measured at different APD gain values. We found that using both PSD and DD methods, the high internal gain of the Si APD achieved a lower minimum detection temperature in order to satisfy a specific minimum output voltage of the detector-preamplifier combination employed. The use of PSD over DD for the Si APD allowed for improved performance of the thermometer, with a lower minimum measurable temperature, as well as improvement in the SNR. For instance we found that at 350°C, the Si APD biased at 150 V using PSD can provide ∼ 88 times enhancement in the system SNR over that of a Si photodiode using DD. A corresponding temperature error of ±0.05°C was achieved using the APD with PSD compared to an error of ±2.75°C measured using the Si photodiode with DD.

  2. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  3. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-01-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

  4. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

    International Nuclear Information System (INIS)

    Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph

    2007-01-01

    Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p + -n - -n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics

  5. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  6. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  7. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  8. Origin of large dark current increase in InGaAs/InP avalanche photodiode

    Science.gov (United States)

    Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

    2018-04-01

    The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

  9. Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

    Science.gov (United States)

    Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

    2001-08-01

    New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

  10. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Reboli, A.

    2005-10-01

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232 Th and 4.2% (240 keV FWHM) for 236 Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  11. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

    1994-01-01

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  12. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Antognini, A.; Boucher, M.; Conde, C.A.N.; Huot, O.; Knowles, P.; Kottmann, F.; Ludhova, L.; Mulhauser, F.; Pohl, R.; Schaller, L.A.; Santos, J.M.F. dos; Taqqu, D.; Veloso, J.F.C.A.

    2003-01-01

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  13. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  14. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

  15. Impulse response measurement in the HgCdTe avalanche photodiode

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-04-01

    HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

  16. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  17. Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

    International Nuclear Information System (INIS)

    Li Yang; Liao Sheng-Kai; Liang Fu-Tian; Shen Qi; Liang Hao; Peng Cheng-Zhi

    2016-01-01

    Quantum random number generators adopting single photon detection have been restricted due to the non-negligible dead time of avalanche photodiodes (APDs). We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors' responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32 × 32 APD array is up to tens of Gbits/s. (paper)

  18. Response of CMS avalanche photo-diodes to low energy neutrons

    Science.gov (United States)

    Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

    2012-12-01

    The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

  19. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    Science.gov (United States)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  20. X-ray fluorescence hologram data collection with a cooled avalanche photodiode

    CERN Document Server

    Hayashi, K; Matsubara, E I; Kishimoto, S; Mori, T; Tanaka, M

    2002-01-01

    A high counting rate X-ray detector with an appropriate energy resolution is desired for high quality X-ray fluorescence hologram measurements because a holographic pattern is detected as extremely small intensity variations of X-ray fluorescence on a large intensity background. A cooled avalanche photodiode (APD), which has about 10% energy resolution and is designed for a high counting rate, fits the above requirements. Reconstructed atomic images from experimental holograms using the APD system provide us a clear view of the first and second neighbor atoms around an emitter. The present result proved that a combination of this APD system and a synchrotron X-ray source enables us to measure a high quality hologram for a reasonable measurement time.

  1. Measurement-based characterization of multipixel avalanche photodiodes for scintillating detectors

    CERN Document Server

    Dziewiecki, M

    2012-01-01

    Multipixel avalanche photodiodes (MAPD) are recently gaining popularity in high energy physics experiments as an attractive replacement for photomultiplier tubes, which have been extensively used for many years as a part of various scintillating detectors. Their low price, small dimensions and another features facilitating their use (like mechanical shock resistance, magnetic field immunity or moderate supply voltage) make the MAPDs a good choice for commercial use as well, what is reflected in growing number of producers as well as MAPD models available on the market. This dissertation presents Author’s experience with MAPD measurements and modelling, gained during his work on the T2K (Tokai-to-Kamioka) long-baseline neutrino experiment, carried out by an international collaboration in Japan. First, operation principle of the MAPD, definitions of various parameters and measurement methods are discussed. Then, a device for large-scale MAPD measurements and related data processing methods are described. Fina...

  2. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  3. A new method to improve multiplication factor in micro-pixel avalanche photodiodes with high pixel density

    Energy Technology Data Exchange (ETDEWEB)

    Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Ahmadov, F. [National Nuclear Research Center, Baku (Azerbaijan); Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Madatov, R.; Mehdiyeva, R. [Institute of Radiation Problems, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada)

    2016-07-11

    Presented is a new model describing development of the avalanche process in time, taking into account the dynamics of electric field within the depleted region of the diode and the effect of parasitic capacitance shunting individual quenching micro-resistors on device parameters. Simulations show that the effective capacitance of a single pixel, which defines the multiplication factor, is the sum of the pixel capacitance and a parasitic capacitance shunting its quenching micro-resistor. Conclusions obtained as a result of modeling open possibilities of improving the pixel gain in micropixel avalanche photodiodes with high pixel density (or low pixel capacitance).

  4. Investigation of the performance of alpha particle counting and alpha-gamma discrimination by pulse shape with micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Ahmadov, G.; Madatov, R.; Sadigov, A.; Sadygov, Z.; Jafarova, E.; Ahmadov, G.; Sadygov, Z.; Olshevski, A.; Zerrouk, F.; Mukhtarov, R.

    2015-01-01

    Being capable measuring small lights gives possibility to use micro-pixel avalanche photodiodes with scintillators. It is shown two prototypes to use micro-pixel avalanche photodiodes with and without scintillators as alpha and gamma counters in this paper. First prototype is to use two micro-pixel avalanche photodiodes. One for detecting alpha particles and closer to it, the second one with a thin plastic scintillator for detecting gamma rays. Second prototype is called two-layers configuration in which it is used only one micro-pixel avalanche photodiode, but two scntillators with different decay times. One can distinquish alpha particle and gamma ray events by using pulse shape discrimination techniques in the two-layer configuration. In this work an alpha particle and gamma ray counting performance of micro-pixel avalanche photodiodes without scintillators and its combination of plastic and BGO+ plastic scintillators was investigated. Obtained results showed the detection performance of the micro-pixel avalanche photodiodes in combination with plastic scintillator was about the same as conventional semiconductor detectors

  5. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

    2015-01-01

    Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

  6. Application of avalanche photodiode for soft X-ray pulse-height analyses in the Ht-7 tokamak

    CERN Document Server

    Shi Yue Jiang; Hu Li Qun; Sun Yan Jun; LiuSheng; Ling Bil

    2002-01-01

    An avalanche photodiode (APD) has been used as soft X-ray energy pulse-height analysis system for the measurement of the electron temperature on the HT-7 tokamak. The experimental results obtained with the APD with its inferior energy resolution show a little difference compared to the conventional high energy-resolution Si (Li) detector. Both numerical analysis and experimental results prove that the APD is good enough for application of the electron temperature measurement in tokamaks.

  7. Large area avalanche photodiodes in scintillation and X-rays detection

    International Nuclear Information System (INIS)

    Moszynski, M.; Szawlowski, M.; Kapusta, M.; Balcerzyk, M.

    2002-01-01

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in γ-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for γ-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3±0.2% and 4.8±0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV γ-peak from a 137 Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570±30 ps for 60 Co γ-rays detected in LSO crystal. The response of LAAPD to X-rays and factors limiting energy resolution have been discussed too

  8. Large area avalanche photodiodes in scintillation and X-rays detection

    CERN Document Server

    Moszynski, M; Kapusta, M; Balcerzyk, M

    2002-01-01

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in gamma-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for gamma-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3+-0.2% and 4.8+-0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV gamma-peak from a sup 1 sup 3 sup 7 Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570+-30 ps for sup 6 sup 0 Co gamma-ray...

  9. Characterization and quality control of avalanche photodiode arrays for the Clear-PEM detector modules

    International Nuclear Information System (INIS)

    Abreu, Conceicao; Amaral, Pedro; Carrico, Bruno; Ferreira, Miguel; Luyten, Joan; Moura, Rui; Ortigao, Catarina; Rato, Pedro; Varela, Joao

    2007-01-01

    Clear-PEM is a Positron Emission Mammography (PEM) prototype being developed in the framework of the Crystal Clear Collaboration at CERN. This device is a dedicated PET camera for mammography, based on LYSO:Ce scintillator crystals, Avalanche PhotoDiodes (APD) and a fast, low-noise electronics readout system, designed to examine both the breast and the axillary lymph node areas, and aiming at the detection of tumors down to 2 mm in diameter. The prototype has two planar detector heads, each composed of 96 detector modules. The Clear-PEM detector module is composed of a matrix of 32 identical 2x2x20 mm 3 LYSO:Ce crystals read at both ends by Hamamatsu S8550 APD arrays (4x8) for Depth-of-Interaction (DoI) capability. The APD arrays were characterized by the measurement of gain and dark current as a function of bias voltage, under controlled temperature conditions. Two independent setups were used. The full set of 398 APD arrays followed a well-defined quality control (QC) protocol, aiming at the rejection of arrays not complying within defined specifications. From a total of 398 arrays, only 2 (0.5%) were rejected, reassuring the trust in these detectors for prototype assembly and future developments

  10. Readout of plastic scintillators with cooled large-area avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Mykulyak, A.; Kapusta, M.; Lynen, U.; Moszynski, M.; Mueller, W.F.J.; Orth, H.; Schwarz, C.; Szawlowski, M.; Trautmann, W.; Trzcinski, A.; Wolski, D.; Zwieglinski, B. E-mail: bzw@fuw.edu.pl

    2004-05-11

    Time-of-flight measurements in multifragmentation of heavy, relativistic projectiles require very good time resolution and at the same time the detecting system must cope with a dynamic range of up to 8000:1. We look into the possibility of application of large-area avalanche photodiodes (LAAPDs) as alternative light sensors to meet the above requirements. The paper presents the results of our amplitude and time response studies of a plastic scintillator BC-408 readout with a phi16 mm LAAPD using radioactive sources. The measurements were performed using two different setups. The best time resolution has been obtained by exploiting LAAPD cooling to increase its gain beyond that accessible at room temperature. We reach 610 ps (FWHM) at -26 deg. C for the corresponding LAAPD gain of {approx}900 and the {sup 90}Sr/{sup 90}Y {beta}-ray source. We hope to reach below the desired 400 ps with the latter setup at the higher light levels available with multifragmentation products.

  11. Progress in the use of avalanche photodiodes for readout for calorimeters

    International Nuclear Information System (INIS)

    Fenker, H.; Morgan, K.; Regan, T.

    1991-09-01

    During the past year the Superconducting Super Collider Tracking Group has progressed from acquisition of its first avalanche photodiode (APD) to installation of a 96-channel array of the devices. The work was motivated by the desire to learn how to use APDs as the sensitive elements in a fiber tracking detector, moderated by the presence of limited resources and the absence of activity within groups outside the SSC Laboratory on such a project. We chose, therefore, to team up with an ongoing research effort which intended to evaluate both pre-shower and shower-maximum detectors and various means of sensing the light produced. The pre-shower detector is made of layers of scintillating fibers similar to a fiber tracker. The shower-maximum detector uses optical fibers to transmit the light from scintillating plates to the readout devices. Our contribution has been to develop the APD array for use in this test from concept to operation. Currently, the equipment is installed in Fermilab's MP beamline awaiting delivery to the final 36 APDs and exposure to the beam. 9 refs., 18 figs

  12. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  13. Optimization of eyesafe avalanche photodiode lidar for automobile safety and autonomous navigation systems

    Science.gov (United States)

    Williams, George M.

    2017-03-01

    Newly emerging accident-reducing, driver-assistance, and autonomous-navigation technology for automobiles is based on real-time three-dimensional mapping and object detection, tracking, and classification using lidar sensors. Yet, the lack of lidar sensors suitable for meeting application requirements appreciably limits practical widespread use of lidar in trucking, public livery, consumer cars, and fleet automobiles. To address this need, a system-engineering perspective to eyesafe lidar-system design for high-level advanced driver-assistance sensor systems and a design trade study including 1.5-μm spot-scanned, line-scanned, and flash-lidar systems are presented. A cost-effective lidar instrument design is then proposed based on high-repetition-rate diode-pumped solid-state lasers and high-gain, low-excess-noise InGaAs avalanche photodiode receivers and focal plane arrays. Using probabilistic receiver-operating-characteristic analysis, derived from measured component performance, a compact lidar system is proposed that is capable of 220 m ranging with 5-cm accuracy, which can be readily scaled to a 360-deg field of regard.

  14. Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

    2018-01-01

    We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

  15. Application of An Avalanche Photodiode in Synchrotron-Based Ultra-fast X-Radiography

    International Nuclear Information System (INIS)

    Cheong, S.-K.; Liu Jinyuan; Wang Jin; Powell, Christopher F.

    2004-01-01

    A possibility of using avalanche photodiode has been investigated while operated in current or continuous wave mode to accommodate high-intensity synchrotron x-ray beams in an ultra-fast x-radiography. To achieve a time resolution of 1 μs or better in a time-resolved x-radiograhic experiment, the entire time-sequence of the APD response to the pulsed synchrotron x-ray beam is recorded with time resolution of 1-2 ns. We have characterized the APD detector in the continuous wave mode to reveal its linearity, signal to noise ratio, and the time response with various circuit configurations. We have demonstrated that signal-to-noise ratio better than 1000 can be achieved, which is limited only by Poisson statistics. These detectors, coupled with finely focused x-rays, have been used to study structure and dynamics of supersonic fuel sprays with 50 μm-spatial resolution and μs-temporal resolution in the region close to an injection nozzle

  16. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  17. Investigation of Avalanche Photodiodes and Multipixel Photon Counters as Light Detectors for Cosmic Rays

    Science.gov (United States)

    Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke

    2013-04-01

    Through the Research Scholars Institute, students of Hartnell Community College experimented with the application of avalanche photodiodes (APDs) as cosmic ray detectors during the summer of 2012. An APD detector was coupled with a 10 meter long wavelength shifting fiber (WSF) wrapped around a cylindrical plastic scintillator to maximize signal detection. A photomultiplier tube (PMT) was used in conjunction to detect the same scintillation light caused by incoming cosmic rays. Two APD detectors were evaluated to confirm the viability of the setup. In addition, a similar setup was recently utilized to implement multi-pixel photon counters (MPPCs) as readout detectors. Under this configuration, a high gain preamplifier was used to amplify the signals for both the MPPC and APD detectors. We report on our results characterizing the MPPC and discuss its overall performance. Compared to the APD, our findings suggest that the MPPC detector has greater sensitivity in detecting weak light signals, and can be used in place of the PMT for certain counting applications.

  18. A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

    International Nuclear Information System (INIS)

    Hsieh, C.L.; Haskovec, J.; Carlstrom, T.N.; DeBoo, J.C.; Greenfield, C.M.; Snider, R.T.; Trost, P.

    1990-06-01

    A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z eff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis. 4 refs., 5 figs

  19. HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

    Energy Technology Data Exchange (ETDEWEB)

    Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark [Institute for Astronomy, University of Hawai‘i at Mānoa, Hilo, HI 96720-2700 (United States); Riddle, Reed [Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Law, Nicholas M., E-mail: baranec@hawaii.edu [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255 (United States)

    2015-08-10

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  20. Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

    Science.gov (United States)

    Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

    2018-04-01

    The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

  1. Depth of interaction resolution measurements for a high resolution PET detector using position sensitive avalanche photodiodes

    International Nuclear Information System (INIS)

    Yang Yongfeng; Dokhale, Purushottam A; Silverman, Robert W; Shah, Kanai S; McClish, Mickel A; Farrell, Richard; Entine, Gerald; Cherry, Simon R

    2006-01-01

    We explore dual-ended read out of LSO arrays with two position sensitive avalanche photodiodes (PSAPDs) as a high resolution, high efficiency depth-encoding detector for PET applications. Flood histograms, energy resolution and depth of interaction (DOI) resolution were measured for unpolished LSO arrays with individual crystal sizes of 1.0, 1.3 and 1.5 mm, and for a polished LSO array with 1.3 mm pixels. The thickness of the crystal arrays was 20 mm. Good flood histograms were obtained for all four arrays, and crystals in all four arrays can be clearly resolved. Although the amplitude of each PSAPD signal decreases as the interaction depth moves further from the PSAPD, the sum of the two PSAPD signals is essentially constant with irradiation depth for all four arrays. The energy resolutions were similar for all four arrays, ranging from 14.7% to 15.4%. A DOI resolution of 3-4 mm (including the width of the irradiation band which is ∼2 mm) was obtained for all the unpolished arrays. The best DOI resolution was achieved with the unpolished 1 mm array (average 3.5 mm). The DOI resolution for the 1.3 mm and 1.5 mm unpolished arrays was 3.7 and 4.0 mm respectively. For the polished array, the DOI resolution was only 16.5 mm. Summing the DOI profiles across all crystals for the 1 mm array only degraded the DOI resolution from 3.5 mm to 3.9 mm, indicating that it may not be necessary to calibrate the DOI response separately for each crystal within an array. The DOI response of individual crystals in the array confirms this finding. These results provide a detailed characterization of the DOI response of these PSAPD-based PET detectors which will be important in the design and calibration of a PET scanner making use of this detector approach

  2. Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure

    Science.gov (United States)

    Abe, Tomoki; Uchida, Shigeto; Tanaka, Keita; Fujisawa, Takanobu; Kasada, Hirofumi; Ando, Koshi; Akaiwa, Kazuaki; Ichino, Kunio

    2018-05-01

    We investigated device degradation in PEDOT:PSS/ZnSSe organic-inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (˜ 30 V) in the N2 (4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2 atmosphere and could be controlled by vacuum packaging.

  3. Best-Practice Criteria for Practical Security of Self-Differencing Avalanche Photodiode Detectors in Quantum Key Distribution

    Science.gov (United States)

    Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.

    2018-04-01

    Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.

  4. Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

    Science.gov (United States)

    Mu, Ying; Valim, Niksa; Niedre, Mark

    2013-06-15

    We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

  5. A novel camera type for very high energy gamma-ray astronomy based on Geiger-mode avalanche photodiodes

    International Nuclear Information System (INIS)

    Anderhub, H; Biland, A; Boller, A; Braun, I; Commichau, S; Commichau, V; Dorner, D; Gendotti, A; Grimm, O; Gunten, H von; Hildebrand, D; Horisberger, U; Kraehenbuehl, T; Kranich, D; Lorenz, E; Lustermann, W; Backes, M; Neise, D; Bretz, T; Mannheim, K

    2009-01-01

    Geiger-mode avalanche photodiodes (G-APD) are promising new sensors for light detection in atmospheric Cherenkov telescopes. In this paper, the design and commissioning of a 36-pixel G-APD prototype camera is presented. The data acquisition is based on the Domino Ring Sampling (DRS2) chip. A sub-nanosecond time resolution has been achieved. Cosmic-ray induced air showers have been recorded using an imaging mirror setup, in a self-triggered mode. This is the first time that such measurements have been carried out with a complete G-APD camera.

  6. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  7. A prototype high-resolution animal positron tomograph with avalanche photodiode arrays and LSO crystals

    International Nuclear Information System (INIS)

    Ziegler, S.I.; Pichler, B.J.; Rafecas, M.; Schwaiger, M.

    2001-01-01

    To fully utilize positron emission tomography (PET) as a non-invasive tool for tissue characterization, dedicated instrumentation is being developed which is specially suited for imaging mice and rats. Semiconductor detectors, such as avalanche photodiodes (APDs), may offer an alternative to photomultiplier tubes for the readout of scintillation crystals. Since the scintillation characteristics of lutetium oxyorthosilicate (LSO) are well matched to APDs, the combination of LSO and APDs seems favourable, and the goal of this study was to build a positron tomograph with LSO-APD modules to prove the feasibility of such an approach. A prototype PET scanner based on APD readout of small, individual LSO crystals was developed for tracer studies in mice and rats. The tomograph consists of two sectors (86 mm distance), each comprising three LSO-APD modules, which can be rotated for the acquisition of complete projections. In each module, small LSO crystals (3.7 x 3.7 x 12 mm 3 ) are individually coupled to one channel within matrices containing 2 x 8 square APDs (2.6 x 2.6 mm 2 sensitive area per channel). The list-mode data are reconstructed with a penalized weighted least squares algorithm which includes the spatially dependent line spread function of the tomograph. Basic performance parameters were measured with phantoms and first experiments with rats and mice were conducted to introduce this methodology for biomedical imaging. The reconstructed field of view covers 68 mm, which is 80% of the total detector diameter. Image resolution was shown to be 2.4 mm within the whole reconstructed field of view. Using a lower energy threshold of 450 keV, the system sensitivity was 350 Hz/MBq for a line source in air in the centre of the field of view. In a water-filled cylinder of 4.6 cm diameter, the scatter fraction at the centre of the field of view was 16% (450 keV threshold). The count rate was linear up to 700 coincidence counts per second. In vivo studies of anaesthetized

  8. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

    International Nuclear Information System (INIS)

    Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2009-01-01

    Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

  9. Studies of the LHC detection systems: scintillating fibers projective electromagnetic calorimeter prototype and light reading by avalanche photodiodes

    International Nuclear Information System (INIS)

    Bouhemaid, N.

    1995-01-01

    In this thesis a study concerning the hardware detection system of ATLAS experiment in preparation for L.H.C. is presented. The study is divided in two parts. After a general introduction of the L.H.C. and the ATLAS detector, the first part concerning the electromagnetic calorimeter, and the second part concerning the readout with avalanche photodiodes, are discussed. For both subjects the basic principles are presented before various test results are described. Within the RD1 program three different electromagnetic calorimeter prototypes, which all use the lead scintillating fibres technique, have been built. The first is a non-projective, compensating calorimeter called ''500μm'', the second is a pseudo projective, non-compensating, called ''1 mm'', and the third is fully projective, called ''Radial''. The last prototype is discussed in more detail. Avalanches photodiodes which are used as readout of the ''1 mm'' calorimeter, have been exposed to both, a dedicated test bench in the laboratory as well as to test beams. The results of these tests are also presented. (author). 35 refs., 96 figs., 30 tabs

  10. 25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

    Science.gov (United States)

    Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

    2014-01-13

    25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

  11. Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

    Science.gov (United States)

    Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

    2015-05-01

    Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

  12. Scintillator counters with multi-pixel avalanche photodiode readout for the ND280 detector of the T2K experiment

    International Nuclear Information System (INIS)

    Mineev, O.; Afanasjev, A.; Bondarenko, G.; Golovin, V.; Gushchin, E.; Izmailov, A.; Khabibullin, M.; Khotjantsev, A.; Kudenko, Yu.; Kurimoto, Y.; Kutter, T.; Lubsandorzhiev, B.; Mayatski, V.; Musienko, Yu.; Nakaya, T.; Nobuhara, T.; Shaibonov, B.A.J.; Shaikhiev, A.; Taguchi, M.; Yershov, N.; Yokoyama, M.

    2007-01-01

    The Tokai-to-Kamioka (T2K) experiment is a second generation long baseline neutrino oscillation experiment which aims at a sensitive search for ν e appearance. The main design features of the T2K near neutrino detectors located at 280m from the target are presented, and the scintillator counters are described. The counters are readout via WLS fibers embedded into S-shaped grooves in the scintillator from both ends by multi-pixel avalanche photodiodes operating in a limited Geiger mode. Operating principles and results of tests of photosensors with a sensitive area of 1mm 2 are presented. A time resolution of 1.75ns, a spatial resolution of 9.9-12.4cm, and a detection efficiency for minimum ionizing particles of more than 99% were obtained for scintillator detectors in a beam test

  13. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  14. CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

    Science.gov (United States)

    Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

    2011-01-01

    This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

  15. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    International Nuclear Information System (INIS)

    Vanyushin, I. V.; Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A.; Shcheleva, I. M.

    2007-01-01

    A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-μm silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength λ = 0.56 μm in the irradiance range of 10 -3 -10 2 lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high

  16. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

    Science.gov (United States)

    Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

    2009-05-01

    Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

  17. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  18. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

    Science.gov (United States)

    Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

    2018-01-01

    We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

  19. Investigation of depth-of-interaction by pulse shape discrimination in multicrystal detectors read out by avalanche photodiodes

    International Nuclear Information System (INIS)

    Saoudi, A.; Pepin, C.M.; Dion, F.; Bentourkia, M.; Lecomte, R.; Dautet, H.

    1999-01-01

    The measurement of depth of interaction (DOI) within detectors is necessary to improve resolution uniformity across the FOV of small diameter PET scanners. DOI encoding by pulse shape discrimination (PSD) has definite advantages as it requires only one readout per pixel and it allows DOI measurement of photoelectric and Compton events. The PSD time characteristics of various scintillators were studied with avalanche photodiodes (APD) and the identification capability was tested in multi-crystal assemblies with up to four scintillators. In the PSD time spectrum of an APD-GSO/LSO/BGO/CsI(Tl) assembly, four distinct time peaks at 45, 26, 88 and 150 ns relative to a fast test pulse, having resolution of 10.6, 5.2, 20 and 27 ns, can be easily separated. Whereas the number and position of scintillators in the multi-crystal assemblies affect detector performance, the ability to identify crystals is not compromised. Compton events have a significant effect on PSD accuracy, suggesting that photopeak energy gating should be used for better crystal identification. However, more sophisticated PSD techniques using parametric time-energy histograms can also improve crystal identification in cases where PSD time or energy discrimination alone is inadequate. These results confirm the feasibility of PSD DOI encoding with APD-based detectors for PET

  20. Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

    Science.gov (United States)

    Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

    2006-01-01

    We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

  1. Development of an integrated four-channel fast avalanche-photodiode detector system with nanosecond time resolution

    Science.gov (United States)

    Li, Zhenjie; Li, Qiuju; Chang, Jinfan; Ma, Yichao; Liu, Peng; Wang, Zheng; Hu, Michael Y.; Zhao, Jiyong; Alp, E. E.; Xu, Wei; Tao, Ye; Wu, Chaoqun; Zhou, Yangfan

    2017-10-01

    A four-channel nanosecond time-resolved avalanche-photodiode (APD) detector system is developed at Beijing Synchrotron Radiation. It uses a single module for signal processing and readout. This integrated system provides better reliability and flexibility for custom improvement. The detector system consists of three parts: (i) four APD sensors, (ii) four fast preamplifiers and (iii) a time-digital-converter (TDC) readout electronics. The C30703FH silicon APD chips fabricated by Excelitas are used as the sensors of the detectors. It has an effective light-sensitive area of 10 × 10 mm2 and an absorption layer thickness of 110 μm. A fast preamplifier with a gain of 59 dB and bandwidth of 2 GHz is designed to readout of the weak signal from the C30703FH APD. The TDC is realized by a Spartan-6 field-programmable-gate-array (FPGA) with multiphase method in a resolution of 1ns. The arrival time of all scattering events between two start triggers can be recorded by the TDC. The detector has been used for nuclear resonant scattering study at both Advanced Photon Source and also at Beijing Synchrotron Radiation Facility. For the X-ray energy of 14.4 keV, the time resolution, the full width of half maximum (FWHM) of the detector (APD sensor + fast amplifier) is 0.86 ns, and the whole detector system (APD sensors + fast amplifiers + TDC readout electronics) achieves a time resolution of 1.4 ns.

  2. New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region

    Science.gov (United States)

    Capasso, F.; Tsang, W. T.; Williams, G. F.

    1982-12-01

    Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≍∞) compatible with high gain (>100).

  3. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  4. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  5. Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

    International Nuclear Information System (INIS)

    Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

    2008-01-01

    In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

  6. Readout electronics for low dark count pixel detectors based on Geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliders

    International Nuclear Information System (INIS)

    Vilella, E.; Arbat, A.; Comerma, A.; Trenado, J.; Alonso, O.; Gascon, D.; Vila, A.; Garrido, L.; Dieguez, A.

    2011-01-01

    High sensitivity and excellent timing accuracy of the Geiger mode avalanche photodiodes make them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase in the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 μm and a high integration 0.13 μm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.

  7. Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

    Science.gov (United States)

    Ardanuy, Antoni; Comerón, Adolfo

    2018-04-01

    We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

  8. Studies of the LHC detection systems: scintillating fibers projective electromagnetic calorimeter prototype and light reading by avalanche photodiodes; Etudes de systemes de detection pour LHC: prototype d`un calorimetre electromagnetique projectif a fibres scintillantes et lecture de la lumiere par des photodiodes a avalanches

    Energy Technology Data Exchange (ETDEWEB)

    Bouhemaid, N

    1995-09-22

    In this thesis a study concerning the hardware detection system of ATLAS experiment in preparation for L.H.C. is presented. The study is divided in two parts. After a general introduction of the L.H.C. and the ATLAS detector, the first part concerning the electromagnetic calorimeter, and the second part concerning the readout with avalanche photodiodes, are discussed. For both subjects the basic principles are presented before various test results are described. Within the RD1 program three different electromagnetic calorimeter prototypes, which all use the lead scintillating fibres technique, have been built. The first is a non-projective, compensating calorimeter called ``500{mu}m``, the second is a pseudo projective, non-compensating, called ``1 mm``, and the third is fully projective, called ``Radial``. The last prototype is discussed in more detail. Avalanches photodiodes which are used as readout of the ``1 mm`` calorimeter, have been exposed to both, a dedicated test bench in the laboratory as well as to test beams. The results of these tests are also presented. (author). 35 refs., 96 figs., 30 tabs.

  9. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    International Nuclear Information System (INIS)

    Nishikido, Fumihiko; Inadama, Naoko; Oda, Ichiro; Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga; Kitamura, Keishi; Murayama, Hideo

    2010-01-01

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6x6x4 array of 1.46x1.46 mm 2 x4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  10. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Nishikido, Fumihiko, E-mail: funis@nirs.go.j [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Inadama, Naoko [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Oda, Ichiro [Shimadzu Corporation, Nishinokyo Kuwabaracho 1 Nakagyo-ku, Kyoto-shi, Kyoto 604-8511 (Japan); Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Kitamura, Keishi [Shimadzu Corporation, Nishinokyo Kuwabaracho 1 Nakagyo-ku, Kyoto-shi, Kyoto 604-8511 (Japan); Murayama, Hideo [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan)

    2010-09-21

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6x6x4 array of 1.46x1.46 mm{sup 2}x4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  11. Pixel multiplexing technique for real-time three-dimensional-imaging laser detection and ranging system using four linear-mode avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Fan; Wang, Yuanqing, E-mail: yqwang@nju.edu.cn; Li, Fenfang [School of Electronic Science and Engineering, Nanjing University, Nanjing 210046 (China)

    2016-03-15

    The avalanche-photodiode-array (APD-array) laser detection and ranging (LADAR) system has been continually developed owing to its superiority of nonscanning, large field of view, high sensitivity, and high precision. However, how to achieve higher-efficient detection and better integration of the LADAR system for real-time three-dimensional (3D) imaging continues to be a problem. In this study, a novel LADAR system using four linear mode APDs (LmAPDs) is developed for high-efficient detection by adopting a modulation and multiplexing technique. Furthermore, an automatic control system for the array LADAR system is proposed and designed by applying the virtual instrumentation technique. The control system aims to achieve four functions: synchronization of laser emission and rotating platform, multi-channel synchronous data acquisition, real-time Ethernet upper monitoring, and real-time signal processing and 3D visualization. The structure and principle of the complete system are described in the paper. The experimental results demonstrate that the LADAR system is capable of achieving real-time 3D imaging on an omnidirectional rotating platform under the control of the virtual instrumentation system. The automatic imaging LADAR system utilized only 4 LmAPDs to achieve 256-pixel-per-frame detection with by employing 64-bit demodulator. Moreover, the lateral resolution is ∼15 cm and range accuracy is ∼4 cm root-mean-square error at a distance of ∼40 m.

  12. Modelization, fabrication and evaluation avalanche photodiodes polarized in Geiger mode for the single photon in astrophysics applications; Modelisation, fabrication et evaluation des photodiodes a avalanche polarisees en mode Geiger pour la detection du photon unique dans les applications Astrophysiques

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D

    2008-12-15

    The genesis of the work presented in this this is in the field of very high energy astrophysics. One century ago, scientists identified a new type of messenger coming from space: cosmic rays. This radiation consists of particles (photons or other) of very high energy which bombard the Earth permanently. The passage of cosmic radiations in the Earth's atmosphere results in the creation of briefs luminous flashes (5 ns) of very low intensity (1 pW), a Cherenkov flash, and then becomes visible on the ground. In the current state of the art the best detector of light today is the Photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. But there are some drawbacks: low quantum efficiency, cost, weight etc. We present in this thesis a new alternative technology: silicon photon counters, made of photodiodes polarized in Geiger mode. This operating mode makes it possible to obtain an effect of multiplication comparable to that of the PMT. A physical and electrical model was developed to reproduce the behaviour of this detector. We then present in this thesis work an original technological process allowing the realization of these devices in the Center of Technology of LAAS-CNRS, with the simulation of each operation of the process. We developed a scheme for the electric characterization of the device, from the static mode to the dynamic mode, in order to check conformity with SILVACO simulations and to the initial model. Results are already excellent, given this is only a first prototype step, and comparable with the results published in the literature. These silicon devices can intervene in all the applications where there is a photomultiplier and replace it. The applications are thus very numerous and the growth of the market of these detectors is very fast. We present a first astrophysical experiment installed at the 'Pic du Midi' site which has detected Cherenkov flashes from cosmic rays with this new semiconductor technology

  13. Modelization, fabrication and evaluation avalanche photodiodes polarized in Geiger mode for the single photon in astrophysics applications

    International Nuclear Information System (INIS)

    Pellion, D.

    2008-12-01

    The genesis of the work presented in this this is in the field of very high energy astrophysics. One century ago, scientists identified a new type of messenger coming from space: cosmic rays. This radiation consists of particles (photons or other) of very high energy which bombard the Earth permanently. The passage of cosmic radiations in the Earth's atmosphere results in the creation of briefs luminous flashes (5 ns) of very low intensity (1 pW), a Cherenkov flash, and then becomes visible on the ground. In the current state of the art the best detector of light today is the Photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. But there are some drawbacks: low quantum efficiency, cost, weight etc. We present in this thesis a new alternative technology: silicon photon counters, made of photodiodes polarized in Geiger mode. This operating mode makes it possible to obtain an effect of multiplication comparable to that of the PMT. A physical and electrical model was developed to reproduce the behaviour of this detector. We then present in this thesis work an original technological process allowing the realization of these devices in the Center of Technology of LAAS-CNRS, with the simulation of each operation of the process. We developed a scheme for the electric characterization of the device, from the static mode to the dynamic mode, in order to check conformity with SILVACO simulations and to the initial model. Results are already excellent, given this is only a first prototype step, and comparable with the results published in the literature. These silicon devices can intervene in all the applications where there is a photomultiplier and replace it. The applications are thus very numerous and the growth of the market of these detectors is very fast. We present a first astrophysical experiment installed at the 'Pic du Midi' site which has detected Cherenkov flashes from cosmic rays with this new semiconductor technology. (author)

  14. The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

    Directory of Open Access Journals (Sweden)

    Moumita Ghosh

    2013-01-01

    Full Text Available The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN reach-through avalanche photodiodes (RAPDs. The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM and Flip Chip (FC are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure; while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

  15. An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

    Science.gov (United States)

    Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

    1994-01-01

    Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

  16. Observability of Low Voltage grids

    DEFF Research Database (Denmark)

    Martin-Loeches, Ruben Sánchez; Iov, Florin; Kemal, Mohammed Seifu

    2017-01-01

    Low Voltage (LV) distribution power grids are experiencing a transformation from a passive to a more active role due to the increasing penetration of distributed generation, heat pumps and electrical vehicles. The first step towards a smarter operation of LV electrical systems is to provide grid ...... an updated state of the art on DSSE-AMI based, adaptive data collection techniques and database management system types. Moreover, the ongoing Danish RemoteGRID project is presented as a realistic case study.......Low Voltage (LV) distribution power grids are experiencing a transformation from a passive to a more active role due to the increasing penetration of distributed generation, heat pumps and electrical vehicles. The first step towards a smarter operation of LV electrical systems is to provide grid....... It becomes unrealistic to provide near real time full observability of the LV grid by applying Distribution System State Estimation (DSSE) utilizing the classical data collection and storage/preprocessing techniques. This paper investigates up-todate the observability problem in LV grids by providing...

  17. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical

  18. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  19. Low voltage arc formation in railguns

    Science.gov (United States)

    Hawke, R.S.

    1985-08-05

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  20. Substitution of photomultiplier tubes by photodiodes

    International Nuclear Information System (INIS)

    Teixeira, D.L.

    1990-04-01

    The application of Si semiconductors, either of the conventional or the avalanche type, as light amplifiers in radiation detection, has been studied aiming the substitution of photomultiplier (PM) tubes by photodiodes. The objective of this work is to compare the response of photodiodes and PM tubes when coupled to scintillation crystals. A Hamamatsu Si photodiode, model S 1337-66 B Q, was coupled to a Harshaw NaI (TI) scintillation crystal of window diameter equal to 25,4 mm. Its performance was evaluated by specially designed associated electronics, compatible with the photodiode characteristics. X-ray beams from 30 to 111 KeV were used to determine the response and the repeatability of the scintillator-photodiode and the scintillator-PM tube systems. The repeatability was found to be within 0,27% for the photodiode and 0,57% for the PM tube. This work confirmed that photodiodes can be used as light amplifiers, provided their characteristics, such as light spectrum response, are considered. It also shows that further studies are necessary in order to identify the applications in radiation detection where PM tubes might be replaced by photodiodes. (author)

  1. DC injection into low voltage AC networks

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report summarises the results of a study investigating the impact of levels of injected DC current injections on a low voltage AC distribution network systems in order to recommend acceptable limits of DC from microgeneration. Relevant literature is reviewed, and the impact of DC levels in distribution transformers, transformer modelling, and instrumental transformers are discussed. The impact of DC in residual current devices (RCD) and in domestic electricity watt hour meters is examined along with DC enhanced corrosion, corrosion failure, and the measurement of DC current injection. Sources of DC injection outlined include DC from computer power supplies, network faults, geomagnetic phenomena, lighting circuits/dimmers, and embedded generators.

  2. Protection of Low Voltage CIGRE distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Bak, Claus Leth

    2013-01-01

    High quality electricity services are the prime objectives in the modern power systems around the world. One of the main players to achieve this is protection of the system which needs to be fast, reliable and cost effective. The study about the protection of the Low Voltage (LV) CIGRE distribution...... grid and networks like this has been proposed in this paper. The main objective of this paper is to develop protection against short circuit faults which might appear any-where in the network. The protection of the power networks that comprises of renewable energy generation units is complicated...... because of the bidirectional flow of the current and is a challenge for the protection engineers. The selection of the protection devices in this paper is made to protect the network against faults in grid connected and island mode of operation. Ultra-fast fuses are proposed in order to protect...

  3. Modular low-voltage electron beams

    International Nuclear Information System (INIS)

    Berejka, A.J.; Avnery, Tovi; Carlson, Carl

    2004-01-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out--plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (<10 μm of titanium foil), solid-state 19 in. (48 cm) rack-mounted power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed

  4. Modular low-voltage electron emitters

    International Nuclear Information System (INIS)

    Berejka, Anthony J.

    2005-01-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

  5. Modular low-voltage electron emitters

    Science.gov (United States)

    Berejka, Anthony J.

    2005-12-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

  6. Modular low-voltage electron beams

    Science.gov (United States)

    Berejka, Anthony J.; Avnery, Tovi; Carlson, Carl

    2004-09-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out—plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed.

  7. Hole-Initiated-Avalanche, Linear-Mode, Single-Photon-Sensitive Avalanche Photodetector with Reduced Excess Noise and Low Dark Count Rate, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A radiation hard, single photon sensitive InGaAs avalanche photodiode (APD) receiver technology will be demonstrated useful for long range space based optical...

  8. Lightning Overvoltage on Low-Voltage Distribution System

    Science.gov (United States)

    Michishita, Koji

    The portion of the faults of a medium-voltage line, cause by lightning, tends to increase with often reaching beyond 30%. However, due to the recent progress of the lightning protection design, the number of faults has decreased to 1/3 of that at 30 years ago. As for the low-voltage distribution line, the fault rate has been estimated primarily, although the details of the overvoltages have not been studied yet. For the further development of highly information-oriented society, improvement of reliability of electric power supply to the appliance in a low-voltage customer will be socially expected. Therefore, it is important to establish effective lightning protection design of the low-voltage distribution system, defined to be composed of lines having mutual interaction on the customers' electric circuits, such as a low-voltage distribution line, an antenna line and a telecommunication line. In this report, the author interprets the recent research on the lightning overvoltage on a low-voltage distribution system.

  9. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

  10. Technical solutions for low-voltage microgrid concept

    Energy Technology Data Exchange (ETDEWEB)

    Laaksonen, H.

    2011-07-01

    Future electricity distribution networks with large amount of distributed energy resources will require creation of a totally new smart grid architecture. The micro grid concept is expected to play a major role in the new smart grid architecture. A special feature of microgrids is that during disturbances in the utility grid they can continue operation automatically in the island mode so that electricity supply to microgrid customers can be continued without any interruption. Thereby, the microgrid concept allows the reliability benefit of distributed energy resources to be realized while also fulfilling the future energy efficiency requirements. In this thesis a total technical concept for low-voltage microgrid which could be integrated into the future smart grids has been developed and specified. The key technical challenges of low-voltage microgrids are the transition to island operation, the power quality management and the microgrid protection especially during island operation. Essential part of the concept development involved the development of solutions and operation principles to these key technical challenges of low-voltage microgrids so that all these solutions would be compatible with each other. The role of one central energy storage unit and the location of it are very important in the developed concept from the low-voltage microgrid management and protection point of view. The development work with the related technical challenges was carried out in this thesis with PSCAD simulation software. PSCAD enabled the examination of a simultaneous interaction of different types of distributed energy resource units and loads both in the normal utility grid connected and in the island operation mode of the microgrid. This information from simulations with multiple component configurations was essential when the technical solutions were developed and these studies could not have been undertaken to this extent in a laboratory environment without major

  11. Extension algorithm for generic low-voltage networks

    Science.gov (United States)

    Marwitz, S.; Olk, C.

    2018-02-01

    Distributed energy resources (DERs) are increasingly penetrating the energy system which is driven by climate and sustainability goals. These technologies are mostly connected to low- voltage electrical networks and change the demand and supply situation in these networks. This can cause critical network states. Network topologies vary significantly and depend on several conditions including geography, historical development, network design or number of network connections. In the past, only some of these aspects were taken into account when estimating the network investment needs for Germany on the low-voltage level. Typically, fixed network topologies are examined or a Monte Carlo approach is used to quantify the investment needs at this voltage level. Recent research has revealed that DERs differ substantially between rural, suburban and urban regions. The low-voltage network topologies have different design concepts in these regions, so that different network topologies have to be considered when assessing the need for network extensions and investments due to DERs. An extension algorithm is needed to calculate network extensions and investment needs for the different typologies of generic low-voltage networks. We therefore present a new algorithm, which is capable of calculating the extension for generic low-voltage networks of any given topology based on voltage range deviations and thermal overloads. The algorithm requires information about line and cable lengths, their topology and the network state only. We test the algorithm on a radial, a loop, and a heavily meshed network. Here we show that the algorithm functions for electrical networks with these topologies. We found that the algorithm is able to extend different networks efficiently by placing cables between network nodes. The main value of the algorithm is that it does not require any information about routes for additional cables or positions for additional substations when it comes to estimating

  12. Low-voltage CMOS operational amplifiers theory, design and implementation

    CERN Document Server

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  13. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  14. Characterization of a low-voltage electron beam

    International Nuclear Information System (INIS)

    Berejka, A.J.

    2004-01-01

    Growing interests in low-voltage electron beam (EB) processing in areas that may require regulatory compliance, such as the curing of inks and coatings for food packaging materials and in the surface disinfection of medicinal and food containers, lead to the characterization of a low-voltage EB by two methods: a widely used thin radiochromic film and a film strip made on a continuous basis with an alanine coating. Using a laboratory unit, beam currents and voltages were varied and then optical density and alanine/matrix ratios were, respectively, determined. No inferences as to 'dose' were made. The radiochromic film was found to be insensitive to slight changes at low beam currents and to show considerable divergence and a broadening in response as current was increased across a meaningful range at the three applied beam voltages of 80, 100 and 120 kV. The electron paramagnetic resonance (EPR) increase in response of the alanine coated film taken as a ratio to an internal reference material within the test instrument itself was shown to have a linear response with respect to beam current and no divergence as current increased. The use of an alanine coating of thickness greater than that of the extrapolated range of the electron penetration offers a method for the characterization of the output of such very low-voltage beams

  15. Low-voltage circuit breaker arcs—simulation and measurements

    International Nuclear Information System (INIS)

    Yang, Fei; Wu, Yi; Rong, Mingzhe; Sun, Hao; Ren, Zhigang; Niu, Chunping; Murphy, Anthony B

    2013-01-01

    As one of the most important electrical components, the low-voltage circuit breaker (LVCB) has been widely used for protection in all types of low-voltage distribution systems. In particular, the low-voltage dc circuit breaker has been arousing great research interest in recent years. In this type of circuit breaker, an air arc is formed in the interrupting process which is a 3D transient arc in a complex chamber geometry with splitter plates. Controlling the arc evolution and the extinction are the most significant problems. This paper reviews published research works referring to LVCB arcs. Based on the working principle, the arcing process is divided into arc commutation, arc motion and arc splitting; we focus our attention on the modelling and measurement of these phases. In addition, previous approaches in papers of the critical physical phenomenon treatment are discussed, such as radiation, metal erosion, wall ablation and turbulence in the air arc. Recommendations for air arc modelling and measurement are presented for further investigation. (topical review)

  16. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  17. Investigation of Avalanche Photodiodes Radiation Hardness for Baryonic Matter Studies

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Ladygin, V.; Kugler, Andrej; Kushpil, Svetlana; Svoboda, Ondřej; Tlustý, Pavel

    2016-01-01

    Roč. 13, č. 1 (2016), s. 120-126 ISSN 1547-4771 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : APDs * detectors * neutrons Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  18. Cesium hafnium chloride scintillator coupled with an avalanche photodiode photodetector

    Czech Academy of Sciences Publication Activity Database

    Kurosawa, S.; Kodama, S.; Yokota, Y.; Horiai, T.; Yamaji, A.; Shoji, Y.; Král, Robert; Pejchal, Jan; Ohashi, Y.; Kamada, K.; Nikl, Martin; Yoshikawa, A.

    2017-01-01

    Roč. 12, Feb (2017), s. 1-8, č. článku C02042. ISSN 1748-0221 Grant - others:AV ČR(CZ) JSPS-17-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : gamma detectors * scintillators and scintillating fibres * scintillators * scintillation and light emission processes Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.220, year: 2016

  19. Lightning-induced overvoltages in low-voltage systems

    Energy Technology Data Exchange (ETDEWEB)

    Hoeidalen, Hans Kristian

    1997-12-31

    Lightning-induced overvoltages (LIOs) are a main source of failures in low-voltage overhead line systems. This thesis deals mainly with calculations of LIOs aiming to enable the design of a proper voltage protection. Models for calculation of LIOs are adapted from the literature or developed based on measurements. The models used are believed to be fairly accurate for the first few microseconds, which is usually sufficient for predicting the maximum induced voltage in the system. The lightning channel is modelled by the Modified Transmission Line (MTL) model with the Transmission Line (TL) model as a special case. The coupling between the electrical fields from a lightning channel and an overhead line is modelled by Agrawal`s model. The attenuation of electrical fields over a lossy ground is modelled by Norton`s- or the Surface Impedance methods. The validity of all the applied models is analysed. In addition, measurements have been performed in order to develop models of distribution transformers and low-voltage power installation (LVPI) networks. Simple models of typical transformers and LVPIs are developed for calculations when specific data are unavailable. The practical range of values and its influence on the LIOs in a system is investigated. The main frequency range of interest related to LIOs is 10 kHz - 1 MHz in which all the models are accurate. The adapted or developed models are used to calculate LIOs in low-voltage systems. The influence of various key parameters in the system is investigated. Most important are the return stroke amplitude and rise time, the overhead line height and location, the termination of overhead line segments, neutral grounding, and the ground conductivity. 135 refs., 136 figs., 12 tabs.

  20. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

  1. Symmetric low-voltage powering system for relativistic electronic devices

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  2. A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2008-01-01

    A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

  3. Evolution of graphene nanoribbons under low-voltage electron irradiation

    KAUST Repository

    Zhu, Wenpeng

    2012-01-01

    Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ∼105 on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties. © 2012 The Royal Society of Chemistry.

  4. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    DEFF Research Database (Denmark)

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

  5. A wiggler magnet for FEL low voltage operation

    Energy Technology Data Exchange (ETDEWEB)

    Al-Shamma`a, A.; Stuart, R.A.; Lucas, J.

    1995-12-31

    In low voltage FELs (ie, 200kV), operation is necessarily in the microwave frequency range for wiggler periods of the order of cms., so that a waveguide system is mandatory. Also, because of the relatively low velocity of the electron beam, the wiggle amplitude of the electron beam can be much larger than is normal for highly relativistic FELs. Both these factors mean that the electron trajectory must be carefully controlled to avoid beam collision with the waveguide walls. A wiggler system with half poles at entrance and exit is not an acceptable solution because of the offset is gives rise to the electron trajectory. Consequently, we have designed and constructed a wiggler magnet with exponential entrance and exit tapers for a minimal deflection and displacement of the electron beam. Simulations and experimental measurements showed that an on axis trajectory is easily obtainable.

  6. Innovative energy efficient low-voltage electron beam emitters

    International Nuclear Information System (INIS)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-01-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates

  7. Innovative energy efficient low-voltage electron beam emitters

    Science.gov (United States)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-03-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.

  8. Review of mixer design for low voltage - low power applications

    Science.gov (United States)

    Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.

    2017-09-01

    A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.

  9. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  10. Integration of Electric Vehicles in Low Voltage Danish Distribution Grids

    DEFF Research Database (Denmark)

    Pillai, Jayakrishnan Radhakrishna; Thøgersen, Paul; Møller, Jan

    2012-01-01

    Electric Vehicles (EVs) are considered as one of the important components of the future intelligent grids. Their role as energy storages in the electricity grid could provide local sustainable solutions to support more renewable energy. In order to estimate the extent of interaction of EVs...... in the electricity grid operation, a careful examination in the local electricity system is essential. This paper investigates the degree of EV penetration and its key influence on the low voltage distribution grids. Three detailed models of residential grids in Denmark are considered as test cases in this study...... it is shown that there is enough head-space on the transformer capacity which can be used to charge many EVs during a day. The overall transformer capability of handling EV loads varies between 6-40% for peak and minimum demand hours, which is dependent on the robustness of the grids. The voltage drops...

  11. Load Insensitive, Low Voltage Quadrature Oscillator Using Single Active Element

    Directory of Open Access Journals (Sweden)

    Jitendra Mohan

    2017-01-01

    Full Text Available In this paper, a load insensitive quadrature oscillator using single differential voltage dual-X second generation current conveyor operated at low voltage is proposed. The proposed circuit employs single active element, three grounded resistors and two grounded capacitors. The proposed oscillator offers two load insensitive quadrature current outputs and three quadrature voltage outputs simultaneously. Effects of non-idealities along with the effects of parasitic are further studied. The proposed circuit enjoys the feature of low active and passive sensitivities. Additionally, a resistorless realization of the proposed quadrature oscillator is also explored. Simulation results using PSPICE program on cadence tool using 90 nm Complementary Metal Oxide Semiconductor (CMOS process parameters confirm the validity and practical utility of the proposed circuit.

  12. Electrical and optical investigations on the low voltage vacuum arc

    International Nuclear Information System (INIS)

    Braic, M.; Braic, V.; Pavelescu, G.; Balaceanu, M.; Pavelescu, D.; Dumitrescu, G.; Gherendi, F.

    2002-01-01

    Preliminary investigations of a low voltage circuit breaker, adapted from a real industrial device, were carried out by electrical and optical methods. Electrical, parameters were measured in the high current arc period and in zero current moment (C.Z) and corroborated with the arc plasma spectroscopic investigations. For the first time in vacuum arc diagnostics, the paper presents results based on single shot time resolved emission spectroscopy around C.Z. The short-circuit current was produced in a special high power installation in order to reproduce exactly the short-circuit regimes developing in low voltage distribution networks. A stainless steel vacuum chamber with classical Cu-Cr electrodes was used. Tests were performed for different current values in the range 3 - 20 kA rms , the voltages being varied between 200 and 1000 V ac . Interruption processes in the different arc regimes (from the diffuse arc mode to the constricted column mode) were analyzed. The success of the arc interruption was analyzed in terms of electric arc energy achieved in the first current halfperiod. The results obtained were corroborated with arc plasma spectroscopic investigations. The emission spectroscopy setup, using an Acton spectrograph and an intensified CCD camera, allowed the spatial and time-resolved investigation of spectra emitted by the vacuum arc plasma. The first truly time-resolved spectroscopic measurements on a single half-period was proven to be a good method to investigate the vacuum arc. Using single shot time resolved spectroscopy around zero current on partial unsuccessful interruption we concluded that the Cu ions, more that Cr ions were responsible for the arc reignition. The financial support for this work comes from NATO-STI SfP /974083 and CORINT-Romania projects. (authors)

  13. Fully low voltage and large area searching scanning tunneling microscope

    International Nuclear Information System (INIS)

    Pang, Zongqiang; Wang, Jihui; Lu, Qingyou

    2009-01-01

    We present a novel scanning tunneling microscope (STM), which allows the tip to travel a large distance (millimeters) on the sample and take images (to find microscopic targets) anywhere it reaches without losing atomic resolution. This broad range searching capability, together with the coarse approach and scan motion, is all done with only one single piezoelectric tube scanner as well as with only low voltages (<15 V). Simple structure, low interference and high precision are thus achieved. To this end, a pillar and a tube scanner are mounted in parallel on a base with one ball glued on the pillar top and two balls glued on the scanner top. These three balls form a narrow triangle, which supports a triangular slider piece. By inertial stepping, the scanner can move the slider toward the pillar (coarse approach) or rotate the slider about the pillar (travel along sample surface). Since all the stepping motions are driven by the scanner's lateral bending which is large per unit voltage, high voltages are unnecessary. The technology is also applicable to scanning force microscopes (SFM) such as atomic force microscopes (AFM), etc

  14. Baking of tandem accelerator tube by low voltage arc discharge

    International Nuclear Information System (INIS)

    Nakajima, Yutaka

    1982-01-01

    In designing the accelerating tube for a static tandem accelerator in Kyushu University, the basic policy was as described below: individual unit composing the accelerating tube should fully withstand the electric field of 2 MV/m, and electric discharge must not be propagated from one unit to the adjacent unit when these are assembled to the accelerating tube. The accelerating tube units are each 25 cm in length, and both high and low energy sides are composed of 20 units, respectively. Although about 10 -9 Torr vacuum was obtained at the both ends of the accelerating tube by baking the tube at 300 to 350 deg C with electric heaters wound outside the tube in the conventional method, vast outgas was generated, which decreased vacuum by two or three figures if breakdown occurred through the intermediary of outgas. As a method of positively outgassing and cleaning the electrodes inside the accelerating tube, it was attempted to directly bake all the electrodes in the accelerating tube by causing strong arc discharge flowing H 2 gas in the tube. As a result of considering the conditions for this method, the low voltage arc discharge was employed using oxide cathodes. Thus, after implementing 10A arc discharge for several hours, the voltage was able to be raised to 10 MV almost immediately after the vacuum recovery, and further, after another conditioning for several hours, it was successful to raise voltage up to 11 MV. (Wakatsuki, Y.)

  15. Life testing of a low voltage air circuit breaker

    International Nuclear Information System (INIS)

    Subudhi, M.

    1991-01-01

    ADS-416 low voltage air circuit breaker manufacture by Westinghouse was mechanically cycled to identify age-related degradation in various breaker subcomponents, in particular, the power-operating mechanism. This accelerated aging test was performed on one breaker unit for over 36,000 cycles. Three separate pole shafts, one with a 60 degree weld, one with a 120 degree weld and one with a 180 degree weld in the third pole lever were used to characterize the cracking in these welds. In addition, during the testing, three different operating mechanisms and several other parts were replaced as they degraded to an inoperable condition. Of the seven welds on the pole shaft, two were found to be the critical ones whose fracture can result in misalignment problems of the pole levers. These failures, in turn can lead to many other problems with the operating mechanism including the burn-out of coils, excessive wear in certain parts and over-stressed linkages. Furthermore, the limiting service life of a number of subcomponents of the power-operated mechanism, including the operating mechanism itself, were assessed. 1 ref., 3 figs

  16. Life testing of a low voltage air circuit breaker

    International Nuclear Information System (INIS)

    Subudhi, M.; Aggarwal, S.

    1992-01-01

    A DS-416 low voltage air circuit breaker manufactured by Westinghouse was mechanically cycled to identify age-related degradation in the various breaker subcomponents, specifically the power-operated mechanism. This accelerated aging test was performed on one breaker unit for over 36,000 cycles. Three separate pole shafts, one with a 60-degree weld, one with a 120-degree weld, and one with a 180-degree weld in the third pole lever were used to characterize cracking in the welds. In addition, during the testing three different operating mechanisms and several other parts were replaced as they became inoperable. Among the seven welds on the pole shaft, number-sign 1 and number-sign 3 were found to be critical ones whose fracture can result in misalignment of the pole levers. This can lead to problems with the operating mechanism, including the burning of coils, excessive wear in certain parts, and overstressed linkages. Furthermore, the limiting service life of a number of subcomponents of the power-operated mechanism, including the operating mechanism itself, were assessed. Based on these findings, suggestions are provided to alleviate the age-related degradation that could occur as a result of normal closing and opening of the breaker contacts during its service life. Also, cause and effect analyses of various age-related degradation in various breaker parts are discussed

  17. Low-voltage electricity-induced lung injury.

    Science.gov (United States)

    Truong, Thai; Le, Thuong Vu; Smith, David L; Kantrow, Stephen P; Tran, Van Ngoc

    2018-02-01

    We report a case of bilateral pulmonary infiltrates and haemoptysis following low-voltage electricity exposure in an agricultural worker. A 58-year-old man standing in water reached for an electric watering machine and sustained an exposure to 220 V circuit for an uncertain duration. The electricity was turned off by another worker, and the patient was asymptomatic for the next 10 h until he developed haemoptysis. A chest radiograph demonstrated bilateral infiltrates, and chest computed tomography (CT) revealed ground-glass opacities with interstitial thickening. Evaluations, including electrocardiogram, serum troponin, N-terminal pro-B-type natriuretic peptide (NT-pro BNP), coagulation studies, and echocardiogram, found no abnormality. The patient was treated for suspected electricity-induced lung injury and bleeding with tranexamic acid and for rhabdomyolysis with volume resuscitation. He recovered with complete resolution of chest radiograph abnormalities by Day 7. This is the first reported case of bilateral lung oedema and/or injury after electricity exposure without cardiac arrest.

  18. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  19. Low Voltage Ride-Through Capability of a Single-Stage Single-Phase Photovoltaic System Connected to the Low-Voltage Grid

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede

    2013-01-01

    The progressively growing of single-phase photovoltaic (PV) systems makes the Distribution System Operators (DSO) to update or revise the existing grid codes in order to guarantee the availability, quality and reliability of the electrical system. It is expected that the future PV systems connected...... to the low-voltage grid will be more active with functionalities of low voltage ride-through (LVRT) and the grid support capability, which is not the case today. In this paper, the operation principle is demonstrated for a single-phase grid-connected PV system in low voltage ride through operation in order...... to map future challenges. The system is verified by simulations and experiments. Test results show that the proposed power control method is effective and the single-phase PV inverters connected to low-voltage networks are ready to provide grid support and ride-through voltage fault capability...

  20. Small Distributed Renewable Energy Generation for Low Voltage Distribution Networks

    Directory of Open Access Journals (Sweden)

    Chindris M.

    2016-08-01

    Full Text Available Driven by the existing energy policies, the use of renewable energy has increased considerably all over the world in order to respond to the increasing energy consumption and to reduce the environmental impact of the electricity generation. Although most policy makers and companies are focusing on large applications, the use of cheap small generation units, based on local renewable resources, has become increasingly attractive for the general public, small farms and remote communities. The paper presents several results of a research project aiming to identify the power quality issues and the impact of RES based distributed generation (DG or other non-linear loads on low voltage (LV distribution networks in Romania; the final goal is to develop a Universal Power Quality Conditioner (UPQC able to diminish the existing disturbances. Basically, the work analyses the existing DG technologies and identifies possible solutions for their integration in Romania; taking into account the existent state of the art, the attention was paid on small systems, using wind and solar energy, and on possibility to integrate them into suburban and rural LV distribution networks. The presence of DG units at distribution voltage level means the transition from traditional passive to active distribution networks. In general, the relatively low penetration levels of DG does not produce problems; however, the nowadays massive increase of local power generation have led to new integration challenges in order to ensure the reliability and quality of the power supply. Power quality issues are identified and their assessment is the key element in the design of measures aiming to diminish all existing disturbances.

  1. Spatial shape of avalanches

    Science.gov (United States)

    Zhu, Zhaoxuan; Wiese, Kay Jörg

    2017-12-01

    In disordered elastic systems, driven by displacing a parabolic confining potential adiabatically slowly, all advance of the system is in bursts, termed avalanches. Avalanches have a finite extension in time, which is much smaller than the waiting time between them. Avalanches also have a finite extension ℓ in space, i.e., only a part of the interface of size ℓ moves during an avalanche. Here we study their spatial shape 〈S(x ) 〉 ℓ given ℓ , as well as its fluctuations encoded in the second cumulant 〈S2(x ) 〉 ℓ c. We establish scaling relations governing the behavior close to the boundary. We then give analytic results for the Brownian force model, in which the microscopic disorder for each degree of freedom is a random walk. Finally, we confirm these results with numerical simulations. To do this properly we elucidate the influence of discretization effects, which also confirms the assumptions entering into the scaling ansatz. This allows us to reach the scaling limit already for avalanches of moderate size. We find excellent agreement for the universal shape and its fluctuations, including all amplitudes.

  2. Selective electromembrane extraction at low voltages based on analyte polarity and charge

    DEFF Research Database (Denmark)

    Domínguez, Noelia Cabaleiro; Gjelstad, Astrid; Nadal, Andrea Molina

    2012-01-01

    Electromembrane extraction (EME) at low voltage (0-15V) of 29 different basic model drug substances was investigated. The drug substances with logP......Electromembrane extraction (EME) at low voltage (0-15V) of 29 different basic model drug substances was investigated. The drug substances with logP...

  3. Angle sensitive single photon avalanche diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Changhyuk, E-mail: cl678@cornell.edu; Johnson, Ben, E-mail: bcj25@cornell.edu; Molnar, Alyosha, E-mail: am699@cornell.edu [Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2015-06-08

    An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

  4. Avalanches in insulating gases

    International Nuclear Information System (INIS)

    Verhaart, H.F.A.

    1982-01-01

    Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

  5. 2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

    NARCIS (Netherlands)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav; Witzigmann, Bernd; Osiński, Marek; Arakawa, Yasuhiko

    2018-01-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow

  6. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  7. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  8. Application of Low Voltage High Resistance Grounding in Nuclear Power Plants

    Directory of Open Access Journals (Sweden)

    Choong-Koo Chang

    2016-02-01

    Full Text Available Most nuclear power plants now utilize solid grounded low voltage systems. For safety and reliability reasons, the low voltage (LV high resistance grounding (HRG system is also increasingly used in the pulp and paper, petroleum and chemical, and semiconductor industries. Fault detection is easiest and fastest with a solidly grounded system. However, a solidly grounded system has many limitations such as severe fault damage, poor reliability on essential circuits, and electrical noise caused by the high magnitude of ground fault currents. This paper will briefly address the strengths and weaknesses of LV grounding systems. An example of a low voltage HRG system in the LV system of a nuclear power plant will be presented. The HRG system is highly recommended for LV systems of nuclear power plants if sufficient considerations are provided to prevent nuisance tripping of ground fault relays and to avoid the deterioration of system reliability.

  9. The degradation diagnosis of low voltage cables used at nuclear power plants

    International Nuclear Information System (INIS)

    Yamamoto, Toshio; Ashida, Tetsuya; Ikeda, Takeshi; Yasuhara, Takeshi; Takechi, Kei; Araki, Shogo

    2001-01-01

    Low voltage cables which have been used for the supply of electric power and the propagation of control signals in nuclear power plants must be sound for safe and stable operation. The long use of nuclear power plants has been reviewed, and the degradation diagnosis to estimate the soundness of low voltage cables has been emphasized. Mitsubishi Cable Industries has established a degradation diagnosis method of cables which convert the velocity of ultrasonic wave in the surface layer of the cable insulation or jacket into breaking elongation, and has developed a degradation diagnosis equipment of low voltage cables used at nuclear power plants in cooperation with Mitsubishi Heavy Industries. This equipment can be moved by an ultrasonic probe by sequential control and measure the ultrasonic velocity automatically. It is capable of a fast an sensitive diagnosis of the cables. We report the outline of this degradation diagnosis equipment and an example of the adaptability estimation at an actual nuclear power plant. (author)

  10. Output Force Enhancement of Scratch Drive Actuator in Low-Voltage Region by Using Flexible Joint

    Directory of Open Access Journals (Sweden)

    Shawn CHEN

    2010-04-01

    Full Text Available Here a low-voltage scratch drive actuator (LVSDA is proposed by incorporating flexible joint into the conventional SDA to improve performance in low-voltage region. Experimental results show that, at the same total plate length of 80 mm and width of 65 mm, the proposed LVSDA can be actuated as low as 40 V, much lower than 80 V, the minimum required input voltage of the conventional SDA. From finite element analysis by CosmosWorks, yielding effect is found to be a critical factor. Before yielding, LVSDA can provide better performance than SDA at the same input voltage. However, the yielding stress in flexible joint would limit the achievable maximum output force in high-voltage region. By varying joint length, width, or location, LVSDA is shown to be operated in low-voltage region where the conventional SDA can not be operated, and can still provide comparable performance as SDA in high-voltage region.

  11. Demand Response in Low Voltage Distribution Networks with High PV Penetration

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    the required flexibility from the electricity market through an aggregator. The optimum demand response enables consumption of maximum renewable energy within the network constraints. Simulation studies are conducted using Matlab and DigSilent Power factory software on a Danish low-voltage distribution system......In this paper, application of demand response to accommodate maximum PV power in a low-voltage distribution network is discussed. A centralized control based on model predictive control method is proposed for the computation of optimal demand response on an hourly basis. The proposed method uses PV...

  12. Safety Training: "Habilitation électrique - Electrician Low Voltage - Initial" course in October

    CERN Multimedia

    Safety Training, HSE Unit

    2016-01-01

    The next session of the course "Habilitation électrique - Electrician Low Voltage - Initial" will be given, in French, from 03 to 05 October 2016.   This course is designed for anyone required to safely perform operations on electrical installations and equipment at low voltage to comply with the requirements of the NF C 18 510 standard. Grade of authorisation: B1-B1V-B2-B2V-BR-BC. There are places available. If you are interested in following this course, please fill in your EDH training request via our classroom course catalogue CTA.  

  13. Low voltage control for the liquid argon hadronic end-cap calorimeter of ATLAS

    CERN Document Server

    Brettel, H; Habring, J; Oberlack, H; Schacht, P

    2002-01-01

    At the ATLAS detector a SCADA system surveys and controls the sub- detectors. The link is realized by PVSS2 software and a CanBus hardware system. The low voltages for the Hadronic Endcaps of the liquid argon calorimeter are produced by DC/DC-converters in the power boxes and split into 320 channels corresponding to the pre- amplifier and summing boards in the cryostat. Six units of a prototype distribution board are currently under test. Each of it contains 2 ELMBs as CanBus interface, a FPGA of type QL3012 for digital control and 30 low voltage regulators for the individual fine adjustments of the outputs.

  14. ANALYSIS OF GRID-CONNECTED PHOTOVOLTAIC SYSTEM INTEGRATON ON LOW-VOLTAGE DISTRIBUTION NETWORK

    Directory of Open Access Journals (Sweden)

    NEMES C.

    2016-03-01

    Full Text Available The introduction of new local sources on the distribution network will impact the quality of power in different ways. The low-voltage customers are strongly affected by the level of power quality, especially by harmonic distortions. In present paper, the impact on the power quality of a low-voltage utility network with an integrated PV system has been assessed at the point of common coupling of the PV system. In this order, the most representative power quality indices concerning the harmonic distortion have been monitored and compared with the limits set by the corresponding standards.

  15. Introduction of cooperating conductive components into the phosphor to improve the low voltage cathodoluminescence

    International Nuclear Information System (INIS)

    Shang, Chun Yu; Kang, Hui; Jiang, Hong Bo; Bu, Shu Po; Shang, Xiao Hong; Wu, Yan

    2013-01-01

    In order to improve the electric conductivity of Y 2 O 3 :Eu 3+ phosphor with the least amount of conductive component so as to maximize the improvement in low voltage cathodoluminescence, In 2 O 3 and Cu nanowires (NWs) were simultaneously introduced to form Cu NWs/In 2 O 3 -attached Y 2 O 3 :Eu 3+ phosphor. In 2 O 3 and Cu NWs play different roles in the formation of electrically conductive network, i.e., Cu NWs are suitable as conductive channels for charge transmission due to their one-dimensional morphology with large slenderness ratios, while the island-like In 2 O 3 condensates form local conductive contacts joining the adjacent Cu NWs. Meanwhile, In 2 O 3 forms attachment between Cu NWs and the phosphor. Owing to the cooperating effects between Cu NWs/In 2 O 3 conductive components in the phosphor, the efficiency in low voltage cathodoluminescence was significantly improved. -- Highlights: ► In 2 O 3 /Cu NWs were introduced in Y 2 O 3 :Eu 3+ phosphor to improve the low voltage cathodoluminescence. ► In 2 O 3 /Cu NWs play different key roles in the formation of electrically conductive network. ► The cooperating effect was proved by comparing the experimental data and the calculated results. ► The low voltage cathodoluminescence was significantly improved

  16. Real time diagnostic for operation at a CW low voltage FEL

    Energy Technology Data Exchange (ETDEWEB)

    Balfour, C.; Shaw, A.; Mayhew, S.E. [and others

    1995-12-31

    At Liverpool University, a system for single user control of an FEL has been designed to satisfy the low voltage FEL (ie 200kV) operational requirements. This system incorporates many aspects of computer automation for beam diagnostics, radiation detection and vacuum system management. In this paper the results of the development of safety critical control systems critical control systems are reported.

  17. Grid modeling, analysis and simulation of different scenarios for a smart low-voltage distribution grid

    DEFF Research Database (Denmark)

    Mihet-Popa, Lucian; Han, Xue; Bindner, Henrik W.

    2013-01-01

    , the number of cabinets and customers and the load per customer. The aim of the model is to design, implement and test the proposed configuration and to investigate whether the low-voltage distribution grid is prepared for the expected future increase of PV penetration, heat pumps and electric cars. The model...

  18. Power quality issues into a Danish low-voltage grid with electric vehicles

    DEFF Research Database (Denmark)

    Marra, Francesco; Jensen, Morten M.; Garcia-Valle, Rodrigo

    2011-01-01

    An increased interest on electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs) is dealing with their introduction into low voltage (LV) distribution grids. Lately, analysis on power quality issues has received attention when considering EVs as additional load. The charging of EVs...

  19. Electric vehicles integration within low voltage electricity networks & possibilities for distribution energy loss reduction

    NARCIS (Netherlands)

    Lampropoulos, I.; Veldman, E.; Kling, W.L.; Gibescu, M.; Slootweg, J.G.

    2010-01-01

    With the prospect of an increasing number of electric vehicles (EVs) on the road, domestic charging will be the most obvious way to recharge the vehicles’ batteries. However, this can have adverse impacts to low voltage (LV) distribution grids such as high current demand, increased 3-phase load

  20. Control of a battery energy storage system connected to a low voltage grid

    NARCIS (Netherlands)

    van Dun, J.J.C.M.; de Groot, Robert; Morren, Johan; Slootweg, Han

    2015-01-01

    This paper describes the development of a control algorithm for a battery energy storage system, which is connected to a residential low voltage grid. By predicting future load demand and photovoltaic production within the neighbourhood concerned, flattening of the aggregated neighbourhood

  1. Low-Voltage Consumption Coordination for Loss Minimization and Voltage Control

    DEFF Research Database (Denmark)

    Juelsgaard, Morten; Sloth, Christoffer; Wisniewski, Rafal

    2014-01-01

    This work presents a strategy for minimizing active power losses in low-voltage grids, by coordinating the consumption of electric vehicles and power generation from solar panels. We show that minimizing losses, also reduces voltage variations, and illustrate how this may be employed for increasing...

  2. Input-current-shaper based on a modified SEPIC converter with low voltage stress

    DEFF Research Database (Denmark)

    Petersen, Lars

    2001-01-01

    The boost topology is often the designer's first choice when dealing with PFC front-ends. This topology is well documented in the literature and has obvious advantages like continuous input current and low voltage- and current-stress compared to other PFC topologies. The PFC SEPIC converter also...

  3. Humidity Steady State Low Voltage Testing of MLCCs (Based on NESC Technical Assessment Report)

    Science.gov (United States)

    Sampson, Mike; Brusse, Jay; Teverovsky, Alexander

    2011-01-01

    Review of the low voltage reduced Insulation Resistance (IR) failure phenomenon in Multilayer ceramic capacitors (MLCCs)and NASA approaches to contend with this risk. 1. Analyze published materials on root cause mechanisms. 2. Investigate suitability of current test methods to assess MLCC lots for susceptibility. 3. Review current NASA parts selection and application guidelines in consideration of benefits vs. disadvantages.

  4. Admissibility of building cost subsidy in the power grid above the low voltage level

    International Nuclear Information System (INIS)

    Foerster, Sven

    2015-01-01

    Electricity networks are essential to the provision of electrical power to businesses and individuals. In particular for manufacturing businesses a connection to the grid above the low-voltage level is often useful. Network operators demand a subsidy for the new connection and for the change to a higher network level under the auspices of construction cost. The power network market above the low-voltage level is a natural monopoly. This leaves consumers looking for a connection to the power grid with no possibility to select among different network operators. Construction cost subsidies are not regulated by law above the low voltage level. The lack of legal regulation and the natural monopoly above the low-voltage level affect the balance of power between network operators and system users. The lawfulness of the construction cost subsidies, the prerequisites for their demand and a review of the calculation models (Leistungspreismodell, 2-Ebenen-Modell) as well as a proposal for a reform of this system form the subject of this work.

  5. Low voltage driven dielectric electro active polymer actuator with integrated piezoelectric transformer based driver

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Thomsen, Ole Cornelius

    2011-01-01

    actuators, a low voltage solution is developed by integrating the driver electronic into a 110 mm tall cylindrical coreless Push InLastor actuator. To decrease the size of the driver, a piezoelectric transformer (PT) based solution is utilized. The PT is essentially an improved Rosen type PT...

  6. Multi-objective optimization control of plug-in electric vehicles in low voltage distribution networks

    DEFF Research Database (Denmark)

    García-Villalobos, J.; Zamora, I.; Knezovic, Katarina

    2016-01-01

    The massive introduction of plug-in electric vehicles (PEVs) into low voltage (LV) distribution networks will lead to several problems, such as: increase of energy losses, decrease of distribution transformer lifetime, lines and transformer overload issues, voltage drops and unbalances...

  7. Low voltage electroosmotic pump for high density integration into microfabricated fluidic systems

    NARCIS (Netherlands)

    Heuck, F.C.A.; Staufer, U.

    2011-01-01

    A low voltage electroosmotic (eo) pump suitable for high density integration into microfabricated fluidic systems has been developed. The high density integration of the eo pump required a small footprint as well as a specific on-chip design to ventilate the electrolyzed gases emerging at the

  8. A structured approach to increase situational awareness in low voltage distribution grids

    NARCIS (Netherlands)

    Helmholt, K.A.; Groote Schaarsberg, M.; Broersma, T.; Morren, J.; Kruizinga, B.; Wouters, P.A.A.F.; Steennis, E.F.; Baldinger, F.

    2015-01-01

    Wear and tear, electrification and aging of (low voltage) distribution grids require maintenance in order to assure continuous provision of electricity. Situational awareness is required to find out when parts of the grid need maintenance and which parts should be prioritized. The paper proposes a

  9. Analysis of Voltage Support by Electric Vehicles and Photovoltaic in a Real Danish Low Voltage Network

    DEFF Research Database (Denmark)

    Knezovic, Katarina; Marinelli, Mattia; Juul Møller, René

    2014-01-01

    of incorporating electric vehicles (EVs) in a low voltage distribution network with high penetration of photovoltaic installations (PVs), and focuses on analysing potential voltage support functions from EVs and PVs. In addition, the paper evaluates the benefits that reactive power control may provide...

  10. Methodology for the assessment of possible damages in low voltage equipment due to lightning surges

    Energy Technology Data Exchange (ETDEWEB)

    Matsuo, Nelson M.; Kagan, Nelson [University of Sao Paulo (USP), SP (Brazil)], Emails: matsuonm@usp.br, nelsonk@pea.usp.br; Domingues, Ivo T. [AES Eletropaulo, SP (Brazil); Jesus, Nelson C. de [AES Sul, Porto Alegre, RS (Brazil); Silva, Marcelo H.I. da [Grupo Rede, Sao Paulo, SP (Brazil); Takauti, Edson H. [Bandeirante, Sao Paulo, SP (Brazil)

    2007-07-01

    This paper deals with the development of a methodology to assess the possibility of equipment damages in low voltage customers due to lightning surges. The main objective is to incorporate this methodology in a computation system that supports distribution companies to determine the possible causes of equipment damages claimed by customers and to decide whether the claims are to be reimbursed or not. The proposed methodology determines whether a specific customer could be affected by a lightning strike according to his/her location and to the lightning main parameters, by using data from a lightning detection system and from the specific equipment surge withstand capability. A specific study using ATP (Alternative Transients Program) was carried out to assess the propagation of lightning surges in electric power distribution systems and their impact over low voltage customers. On the other hand, the withstand capability of the main household appliances was determined by a series of tests carried out in the University's power quality laboratory. The paper details the modeling used for simulation, such as network configuration, grounding points, and modelling of insulator flashover, distribution transformer, low voltage loads. It also presents some results regarding the evaluation of over voltages in low voltage customers installations. A practical method is proposed for assessing the possibility of equipment damage and describes how the existing uncertainties were handled. Also, some issues regarding the withstand capability of electric household appliances to lightning surges are discussed and some results of the laboratory tests are presented. (author)

  11. Neuronal avalanches and learning

    Energy Technology Data Exchange (ETDEWEB)

    Arcangelis, Lucilla de, E-mail: dearcangelis@na.infn.it [Department of Information Engineering and CNISM, Second University of Naples, 81031 Aversa (Italy)

    2011-05-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  12. Neuronal avalanches and learning

    International Nuclear Information System (INIS)

    Arcangelis, Lucilla de

    2011-01-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  13. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  14. The fabrication of 3-D nanostructures by a low- voltage EBL

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seung Hun [Department of Nano Science and Technology, Pusan National University (Korea, Republic of); Kim, Jae Gu [Department of Nano-Mechanical Systems, Korea Institute of Machinery and Materials (Korea, Republic of); Kim, Chang Seok [Department of Cogno-Mechatronics Engineering, Pusan National University (Korea, Republic of); Choi, Doo Sun; Chang, Sunghwan [Department of Nano-Mechanical Systems, Korea Institute of Machinery and Materials (Korea, Republic of); Jeong, Myung Yung, E-mail: myjeong@pusan.ac.kr [Department of Cogno-Mechatronics Engineering, Pusan National University (Korea, Republic of)

    2011-02-15

    Three-dimensional (3-D) structures are used in many applications, including the fabrication of opto-electronic and bio-MEMS devices. Among the various fabrication techniques available for 3-D structures, nano imprint lithography (NIL) is preferred for producing nanoscale 3-D patterns because of its simplicity, relatively short processing time, and high manufacturing precision. For efficient replication in NIL, a precise 3-D stamp must be used as an imprinting tool. Hence, we attempted the fabrication of original 3-D master molds by low-voltage electron beam lithography (EBL). We then fabricated polydimethylsiloxane (PDMS) stamps from the original 3-D mold via replica molding with ultrasonic vibration.First, we experimentally analyzed the characteristics of low-voltage EBL in terms of various parameters such as resist thickness, acceleration voltage, aperture size, and baking temperature. From these e-beam exposure experiments, we found that the exposure depth and width were almost saturated at 3 kV or lesser, even when the electron dosage was increased. This allowed for the fabrication of various stepped 3-D nanostructures at a low voltage. In addition, by using line-dose EBL, V-groove patterns could be fabricated on a cured electron resist (ER) at a low voltage and low baking temperature. Finally, the depth variation could be controlled to within 10 nm through superposition exposure at 1 kV. From these results, we determined the optimum electron beam exposure conditions for the fabrication of various 3-D structures on ERs by low-voltage EBL. We then fabricated PDMS stamps via the replica molding process.

  15. Imaging findings of avalanche victims

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Alexandra B.; Grosse, Claudia A.; Anderson, Suzanne [University Hospital of Berne, Inselspital, Department of Diagnostic, Pediatric and Interventional Radiology, Berne (Switzerland); Steinbach, Lynne S. [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Zimmermann, Heinz [University Hospital of Berne, Inselspital, Department of Trauma and Emergency Medicine, Berne (Switzerland)

    2007-06-15

    Skiing and hiking outside the boundaries remains an attractive wilderness activity despite the danger of avalanches. Avalanches occur on a relatively frequent basis and may be devastating. Musculoskeletal radiologists should be acquainted with these injuries. Fourteen avalanche victims (11 men and 3 women; age range 17-59 years, mean age 37.4 years) were air transported to a high-grade trauma centre over a period of 2 years. Radiographs, CT and MR images were prospectively evaluated by two observers in consensus. Musculoskeletal findings (61%) were more frequent than extraskeletal findings (39%). Fractures were most commonly seen (36.6%), involving the spine (14.6%) more frequently than the extremities (9.8%). Blunt abdominal and thoracic trauma were the most frequent extraskeletal findings. A wide spectrum of injuries can be found in avalanche victims, ranging from extremity fractures to massive polytrauma. Asphyxia remains the main cause of death along with hypoxic brain injury and hypothermia. (orig.)

  16. 30 CFR 77.906 - Trailing cables supplying power to low-voltage mobile equipment; ground wires and ground check...

    Science.gov (United States)

    2010-07-01

    ... portable or mobile equipment from low-voltage three-phase resistance grounded power systems shall contain... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Trailing cables supplying power to low-voltage... STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage...

  17. Evaluation of diagnostic technique for degradation of low-voltage electric cables with silicone rubber insulator

    International Nuclear Information System (INIS)

    Mikami, Masao

    2005-01-01

    As a part of countermeasures against ageing problems of nuclear power plants, it is requested to establish non-destructive diagnostic technique for their degradation of low voltage electric cables and assessment standard of their life. Having aimed at investigating the degradation of low-voltage electric cable with silicone rubber insulator, change of its surface hardness at elevated temperature were measured by indenter modules. Moreover, we also measured the elongation at break, which is regarded as general degradation index of electric cables, and the surface hardness with a micro hardness meter. Consequently, it is seen that the indenter modulus measurement is (1) capable to obtain general feature of the thermal degradation of silicone rubber insulator, (2) applicable to diagnose the degree of degradation of the electric cable by converting the result to elongation at break, (3) well correlated with the hardness measurement of the electric cable with the micro hardness meter. (author)

  18. Technical Training Seminar: Low-Voltage Differential Signaling (LVDS): Technology and Applications

    CERN Multimedia

    Monique Duval

    2004-01-01

    Tuesday 26 October TECHNICAL TRAINING SEMINAR from 14:00 to 16:30, Auditorium 40-SS-C01 Low-Voltage Differential Signaling (LVDS): Technology and Applications Herbert Eisenring, Kai Peters / NATIONAL SEMICONDUCTOR (Europe) National Semiconductor pioneered the Low-Voltage Differential Signaling (LVDS) technology, and is a recognized leader in high speed differential products and design tools. National Semiconductor offers a wide range of innovative, affordable interconnect solutions including serializer-deserializers (SerDes), drivers-receivers-transceivers, crosspoint switches and clock drivers. LVDS is a new technology addressing the needs of todays high performance data transmission applications, and the LVDS standard is becoming the most popular differential data transmission standard in the industry. This Technical Training Seminar will present National Semiconductor existing and future products, and some applications relevant to the activities carried out at CERN. 14:00 - 14:15 Presentation of Nati...

  19. Technical Training Seminar: Low-Voltage Differential Signaling (LVDS): Technology and Applications

    CERN Multimedia

    Monique Duval

    2004-01-01

    Tuesday 26 October TECHNICAL TRAINING SEMINAR from 14:00 to 16:30, Auditorium 40-SS-C01 Low-Voltage Differential Signaling (LVDS): Technology and Applications Herbert Eisenring, Kai Peters / NATIONAL SEMICONDUCTOR (Europe) National Semiconductor pioneered the Low-Voltage Differential Signaling (LVDS) technology, and is a recognized leader in high speed differential products and design tools. National Semiconductor offers a wide range of innovative, affordable interconnect solutions including serializer-deserializers (SerDes), drivers-receivers-transceivers, crosspoint switches and clock drivers. LVDS is a new technology addressing the needs of todays high performance data transmission applications, and the LVDS standard is becoming the most popular differential data transmission standard in the industry. This Technical Training Seminar will present National Semiconductor existing and future products, and some applications relevant to the activities carried out at CERN. 14:00 - 14:15 Presentation of Nat...

  20. Flexible Demand Control to Enhance the Dynamic Operation of Low Voltage Networks

    DEFF Research Database (Denmark)

    Diaz de Cerio Mendaza, Iker; Szczesny, Ireneusz Grzegorz; Pillai, Jayakrishnan Radhakrishna

    2015-01-01

    Moving towards a carbon free energy system has become an objective for many countries nowadays. Among other changes, the electrification of strategic sectors such as heating and transportation is inevitable. As a consequence, the current power system load will substantially increase...... for controlling the demand response of a low voltage grid. This is designed to; i) maximize the grid utilization, thereby reducing the need for reinforcement, ii) accommodate the maximum number of flexible loads and iii) satisfy the power and comfort requirements from each of the consumers in the network....... In this context, the nature of the expected loads (heat pumps, plug-in electric vehicles, etc.) makes the low voltage networks specially targeted. A promising solution to overcome the challenges resulting from their grid integration, is demand response. This paper introduces a hierarchical structure...

  1. A Decentralized Multi-Agent-Based Approach for Low Voltage Microgrid Restoration

    Directory of Open Access Journals (Sweden)

    Ebrahim Rokrok

    2017-09-01

    Full Text Available Although a well-organized power system is less subject to blackouts, the existence of a proper restoration plan is nevertheless still essential. The goal of a restoration plan is to bring the power system back to its normal operating conditions in the shortest time after a blackout occurs and to minimize the impact of the blackout on society. This paper presents a decentralized multi-agent system (MAS-based restoration method for a low voltage (LV microgrid (MG. In the proposed method, the MG local controllers are assigned to the specific agents who interact with each other to achieve a common decision in the restoration procedure. The evaluation of the proposed decentralized technique using a benchmark low-voltage MG network demonstrates the effectiveness of the proposed restoration plan.

  2. Restoration of Low-Voltage Distribution Systems with Inverter-Interfaced DG Units

    DEFF Research Database (Denmark)

    Dietmannsberger, Markus; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    -area voltage collapse. This paper proposes a restoration strategy from zero voltage conditions for inverter-interfaced DG under islanded conditions. In the approach, a flexible and scalable Master DG inverter concept is introduced for distributed generations, where no communication is needed and an outage......The increasing share of distributed generation (DG) offers new chances in grid restoration of low-voltage distribution grids. Instead of relying on the transmission or high- and medium-voltage levels, establishing islanding operation in low-voltage grids might be a good option after a wide...... of the Master can be balanced by other DG inverters. The control strategy ensures the tracking of nominal values of the system voltage and frequency without zero steady-state error. The influences of non-controllable DG are also taken into account in the strategy with an effective countermeasure developed...

  3. Antenna Characterization for the JOLT Impulsive Radiator via Low-Voltage Measurements

    Science.gov (United States)

    Tyo, J. S.; Schoenberg, J. S. H.; Baum, C. E.; Prather, W. D.; Hackett, R.; Burger, J. W.; Farr, E. G.; Giri, D. V.; McLemore, D. P.

    The JOLT system is a highly directive, impulse-like radiator. The antenna for JOLT is a 10-ft-diameter half-impulse radiating antenna (HIRA). JOLT was one of the first impulse radiating systems to employ a half IRA. For that reason, extensive measurements were made with a prototype, scale model HIRA in order to understand the performance of this class of antenna. In addition, a series of low-voltage antenna subsystem tests were performed with the full JOLT antenna before it was couple to the pulsed power and run at high voltage. The low-voltage measurements proved to be quite valuable, as an important manufacturing defect—a failure to mount the dish perpendicular to the ground plane—was identified and mitigated.

  4. Assessing the use of Low Voltage UV-light Emitting Miniature LEDs for Marine Biofouling Control

    Science.gov (United States)

    2016-07-01

    of that required to drive traditional UV mercury lamps . Secondly, given their small size and relatively low cost, UV LEDs provide ease of maintenance...UNCLASSIFIED UNCLASSIFIED Assessing the use of Low Voltage UV -light Emitting Miniature LEDs for Marine Biofouling Control Richard...settling organisms. The introduction of miniature UV light emitting diodes ( LEDs ) as a light source enables them to be embedded into thin, flexible

  5. Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

    International Nuclear Information System (INIS)

    Lemberger, T.R.

    1984-01-01

    A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

  6. A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic.

    Science.gov (United States)

    Zhou, Ye; Han, Su-Ting; Huang, Long-Biao; Huang, Jing; Yan, Yan; Zhou, Li; Roy, V A L

    2013-05-24

    A programmable low voltage unipolar inverter with saturated-load configuration has been demonstrated on a plastic substrate. A self-assembled monolayer of gold (Au) nanoparticles was inserted into the dielectric layer acting as a charge trapping layer. The inverter operated well with supply voltages of inverter. Furthermore, the programmable behavior was maintained well at various bending states, demonstrating the adequate flexibility of our devices.

  7. Investigation of Electron Beam Induced Mass Loss of Embedding Media in the Low Voltage STEM

    Czech Academy of Sciences Publication Activity Database

    Novotná, V.; Hrubanová, Kamila; Nebesářová, J.; Krzyžánek, Vladislav

    2014-01-01

    Roč. 20, S3 (2014), s. 1270-1271 ISSN 1431-9276 R&D Projects: GA MŠk EE.2.3.20.0103; GA MŠk(CZ) LO1212; GA ČR(CZ) GA14-20012S; GA TA ČR TE01020118 Institutional support: RVO:68081731 Keywords : mass loss * mass -thickness measurement * low voltage STEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.877, year: 2014

  8. Guidelines for Distribution System Operators on Reactive Power Provision by Electric Vehicles in Low Voltage Grids

    DEFF Research Database (Denmark)

    Zecchino, Antonio; Marinelli, Mattia; Træholt, Chresten

    2017-01-01

    The increasing success of electric vehicles is bringing new technical challenges to power system operators. This work intends to provide guidelines for distribution system operators in terms of reactive power requirements when evaluating and authorizing electric vehicles supply equipment with fast...... the amount of reactive power that an individual electric vehicle is expected to provide when connected to a low voltage feeder, in order to benefit of the desired voltage rise effect in comparison to the case of unitary power factor....

  9. The European Foundation for Quality Management (EFQM Excellence Model in a Low Voltage Switchgear Compan

    Directory of Open Access Journals (Sweden)

    Özgür Özmen

    2017-11-01

    Full Text Available The Turkish low voltage switchgear sector is made up of several local and international companies. Generally, local companies operating in this sector try to get a competitive advantage by fabricating cheap products, in order to cope with the competition that focuses more on quality. What’s more, international corporations perform quality activities under the organization and control of their top-managements from abroad. Although VIKO is a local producer, it is a company willing to invest more in quality, as well as in research and development. VIKO company is the focus of this self-assessment study, since it lies at the conjunction of companies operating in this sector, it being a local company performing various quality enhancement activities. Simultaneously, the authors consider that this study shall prove useful to create an overview over the entire Turkish low voltage switchgear sector. The evaluation of the company and its core-activities was based upon nine criteria of the European Foundation for Quality Management (EFQM Excellence Model, in order to identify the strengths, the weaknesses and aspects that require improvements. This is the first study worldwide performed in the low voltage switchgear sector and it is aimed at motivating other Turkish companies that operate in this sector to implement The European Foundation for Quality Management (EFQM Excellence Model in their TQM activities (Total Quality Management.

  10. Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz.

    Science.gov (United States)

    Hornstein, Melissa K; Bajaj, Vikram S; Griffin, Robert G; Temkin, Richard J

    2007-02-01

    The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE(2) (,) (3) (,) (1) mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents.

  11. A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

    Science.gov (United States)

    Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

    2012-08-01

    We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

  12. Voltage stability in low voltage microgrids in aspects of active and reactive power demand

    Directory of Open Access Journals (Sweden)

    Parol Mirosław

    2016-03-01

    Full Text Available Low voltage microgrids are autonomous subsystems, in which generation, storage and power and electrical energy consumption appear. In the paper the main attention has been paid to the voltage stability issue in low voltage microgrid for different variants of its operation. In the introduction a notion of microgrid has been presented, and also the issue of influence of active and reactive power balance on node voltage level has been described. Then description of voltage stability issue has been presented. The conditions of voltage stability and indicators used to determine voltage stability margin in the microgrid have been described. Description of the low voltage test microgrid, as well as research methodology along with definition of considered variants of its operation have been presented further. The results of exemplary calculations carried out for the daily changes in node load of the active and reactive power, i.e. the voltage and the voltage stability margin indexes in nodes have been presented. Furthermore, the changes of voltage stability margin indexes depending on the variant of the microgrid operation have been presented. Summary and formulation of conclusions related to the issue of voltage stability in microgrids have been included at the end of the paper.

  13. The Simulation Study of a Restructured Residential Low-Voltage Distribution System Microgrid

    Directory of Open Access Journals (Sweden)

    L. Ramesh

    2016-12-01

    Full Text Available A primary and necessary focus in creating a greener environment is the conversion of existing power-generation sources to renewable power sources in the near future. Another important focus is to develop sustainable household power generation to a low-voltage electricity grid with a power purchase and selling facility. To help with achieving the above vision, the objective of this work is to critically analyze the existing low-voltage distribution system and make suggestions for restructuring it to the low-voltage interconnected microgrid (MG. The test was carried out in the Tamil Nadu Electricity Board (TNEB 100kVA transformer feeder which was connected to supply around 100 houses with electricity. The performance analysis of the proposed system was examined through different case studies, represented as a normal operating condition of the existing distribution system and a reconstructed and interconnected MG to the TNEB grid. The project was designed and analyzed using PSCAD software. The results discussed in the project are helpful in examining the effects of multiple distributed energy resources on distributed generation. In future, knowledge of these effects may be helpful for rural area electrification.

  14. Avalanche risk assessment in Russia

    Science.gov (United States)

    Komarov, Anton; Seliverstov, Yury; Sokratov, Sergey; Glazovskaya, Tatiana; Turchaniniva, Alla

    2017-04-01

    The avalanche prone area covers about 3 million square kilometers or 18% of total area of Russia and pose a significant problem in most mountain regions of the country. The constant growth of economic activity, especially in the North Caucasus region and therefore the increased avalanche hazard lead to the demand of the large-scale avalanche risk assessment methods development. Such methods are needed for the determination of appropriate avalanche protection measures as well as for economic assessments during all stages of spatial planning of the territory. The requirement of natural hazard risk assessments is determined by the Federal Law of Russian Federation. However, Russian Guidelines (SP 11-103-97; SP 47.13330.2012) are not clearly presented concerning avalanche risk assessment calculations. A great size of Russia territory, vast diversity of natural conditions and large variations in type and level of economic development of different regions cause significant variations in avalanche risk values. At the first stage of research the small scale avalanche risk assessment was performed in order to identify the most common patterns of risk situations and to calculate full social risk and individual risk. The full social avalanche risk for the territory of country was estimated at 91 victims. The area of territory with individual risk values lesser then 1×10(-6) covers more than 92 % of mountain areas of the country. Within these territories the safety of population can be achieved mainly by organizational activities. Approximately 7% of mountain areas have 1×10(-6) - 1×10(-4) individual risk values and require specific mitigation measures to protect people and infrastructure. Territories with individual risk values 1×10(-4) and above covers about 0,1 % of the territory and include the most severe and hazardous mountain areas. The whole specter of mitigation measures is required in order to minimize risk. The future development of such areas is not recommended

  15. Left atrial low-voltage areas predict atrial fibrillation recurrence after catheter ablation in patients with paroxysmal atrial fibrillation.

    Science.gov (United States)

    Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Tsujimura, Takuya; Matsuda, Yasuhiro; Okuno, Shota; Ohashi, Takuya; Tsuji, Aki; Mano, Toshiaki

    2018-04-15

    Association between the presence of left atrial low-voltage areas and atrial fibrillation (AF) recurrence after pulmonary vein isolation (PVI) has been shown mainly in persistent AF patients. We sought to compare the AF recurrence rate in paroxysmal AF patients with and without left atrial low-voltage areas. This prospective observational study included 147 consecutive patients undergoing initial ablation for paroxysmal AF. Voltage mapping was performed after PVI during sinus rhythm, and low-voltage areas were defined as regions where bipolar peak-to-peak voltage was low-voltage areas after PVI were observed in 22 (15%) patients. Patients with low-voltage areas were significantly older (72±6 vs. 66±10, plow-voltage areas than without (36% vs. 6%, pLow-voltage areas were independently associated with AF recurrence even after adjustment for the other related factors (Hazard ratio, 5.89; 95% confidence interval, 2.16 to 16.0, p=0.001). The presence of left atrial low-voltage areas after PVI predicts AF recurrence in patients with paroxysmal AF as well as in patients with persistent AF. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  17. The photodiodes response in beta dosimetry

    International Nuclear Information System (INIS)

    Khoury, Helen; Amaral, Ademir; Hazin, Clovis; Melo, Francisco

    1996-01-01

    The response of the photodiodes BPY-12, BPW-34 and SFH-206 is tested for use as beta dosimeters. The results obtained show a dose-response relationships as well as less than 1% of coefficient of variation for the reproducibility of their responses. The photodiode BPY-12 has presented a better response in comparison with the others

  18. Low Cost silicon photodiodes for alpha spectrometry

    International Nuclear Information System (INIS)

    Khoury, H.; Lopes, A.; Hazin, C.; Lira, C.B.; Silva, E. da

    1998-01-01

    This study was carried out to evaluate the suitability of using commercially available photodiodes for alpha spectrometry, since the principle on which both operate are similar. Photodiodes are low priced compared to the commonly used semiconductor detectors making them potentially useful for research and teaching purposes. Very thin calibrated alpha sources of 2 41 A m, 2 44 C m and 2 35 U , produced at the Metrology Laboratory of IRD/CNEN, were used to test the performance of three photodiodes. The results showed that the responses of the photodiodes were linear with the alpha particle energy and that the energy resolution varied between 0,79% and 0,45%, with an efficiency of 8%. The resolution and efficiency presented by the photodiodes tested are similar to those obtained with other semiconductor detectors, evidencing that they can be used successfully as alpha detectors

  19. Frequency pulling in a low-voltage medium-power gyrotron

    Science.gov (United States)

    Luo, Li; Du, Chao-Hai; Huang, Ming-Guang; Liu, Pu-Kun

    2018-04-01

    Many recent biomedical applications use medium-power frequency-tunable terahertz (THz) sources, such as sensitivity-enhanced nuclear magnetic resonance, THz imaging, and biomedical treatment. As a promising candidate, a low-voltage gyrotron can generate watt-level, continuous THz-wave radiation. In particular, the frequency-pulling effect in a gyrotron, namely, the effect of the electron beam parameters on the oscillation frequency, can be used to tune the operating frequency. Most previous investigations used complicated and time-consuming gyrotron nonlinear theory to study the influence of many beam parameters on the interaction performance. While gyrotron linear theory investigation demonstrates the advantages of rapidly and clearly revealing the physical influence of individual key beam parameters on the overall system performance, this paper demonstrates systematically the use of gyrotron linear theory to study the frequency-pulling effect in a low-voltage gyrotron with either a Gaussian or a sinusoidal axial-field profile. Furthermore, simulations of a gyrotron operating in the first axial mode are carried out in the framework of nonlinear theory as a contrast. Close agreement is achieved between the two theories. Besides, some interesting results are obtained. In a low-current sinusoidal-profile cavity, the ranges of frequency variation for different axial modes are isolated from each other, and the frequency tuning bandwidth for each axial mode increases by increasing either the beam voltage or pitch factor. Lowering the voltage, the total tuning ranges are squeezed and become concentrated. However, the isolated frequency regions of each axial mode cannot be linked up unless the beam current is increased, meaning that higher current operation is the key to achieving a wider and continuous tuning frequency range. The results presented in this paper can provide a reference for designing a broadband low-voltage gyrotron.

  20. Calibration of Monte Carlo simulation code to low voltage electron beams through radiachromic dosimetry

    International Nuclear Information System (INIS)

    Weiss, D.E.; Kalweit, H.W.; Kensek, R.P.

    1994-01-01

    A simple multilayer slab model of an electron beam using the ITS/TIGER code can consistently account for about 80% of the actual dose delivered by a low voltage electron beam. The difference in calculated values is principally due to the 3D hibachi structure which blocks 22% of the beam. A 3D model was constructed using the ITS/ACCEPT code to improve upon the TIGER simulations. A rectangular source description update to the code and reproduction of all key geometric elements involved, including the hibachi, accounted for 90-95% of the dose received by routine dosimetry

  1. Collapse of a cavitation bubble generated by low voltage discharge in water

    Directory of Open Access Journals (Sweden)

    Zima Patrik

    2012-04-01

    Full Text Available The article presents experimental results of the optical study of cavitation bubble collapse close to a solid boundary in water. The bubble was generated by discharge of two low-voltage capacitors. High-speed CCD camera was used to record the time evolution of the bubble size. High-power halogen lamp was used for illumination. The system was synchronized by pulse generator connected to an oscilloscope. The velocity of the re-entrant jet was estimated from the time resolved photography for different maximum bubble sizes.

  2. Integration of Fuel Cell Micro-CHPs on Low. Voltage Grid: A Danish Case Study

    DEFF Research Database (Denmark)

    You, Shi; Marra, Francesco; Træholt, Chresten

    2012-01-01

    The future significance of fuel cell (FC) powered micro combined heat and power (micro-CHP) units in meeting the residential energy demands is set to increase, which may have a considerable impact on the low voltage (LV) grid. The objective of this paper is to investigate into the related technical...... issues using a Danish case study with different penetration levels of uncoordinated FC micro-CHPs. Based on the findings, it is recommended to design grid oriented integration strategies such as Virtual Power Plants (VPPs) for achieving future smart grids with a large roll out of distributed energy...

  3. Low voltage excess noise and shot noise in YBCO bicrystal junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

    2002-01-01

    The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V noise rise has been...... registered. At large bias voltages V > 30 mV a clear dependence of noise power. exactly coinciding to the asymptote of the Schottky shot noise function, has been observed for the first time. Experimental results are discussed in terms of multiple Andreev reflections which may take place in d...

  4. Studies on low-voltage x-ray radiography for graphite materials

    International Nuclear Information System (INIS)

    Muraoka, Susumu; Itami, Hiroharu

    1978-09-01

    Low-voltage radiography has been studied to provide optimum technique for graphite less than 50 mm thick. First we determined the exposure conditions under which the most appropriate photographic density can be obtained. By parametric studies, an exposure chart was prepared. Then we studied how the environment of photographing affected the film density. Thirdly, by use of graphite materials with artificial flaws, Image Quality Indicator (I.Q.I.) sensitivity was determined. Detectability of a crack depended on an incidence angle of X-rays onto a crack. Finally, we photographed graphites having natural flaws and gained a useful information. (author)

  5. Effects of low voltage electrolysis and freezing on coliform content of contaminated water

    International Nuclear Information System (INIS)

    Qazi, J.I.; Saleem, F.

    2003-01-01

    A sewage sample was mixed with drinking water and subjected to low voltage (15V) electrolysis in the presence of 1% NaCl. The prepared sample was also kept in freezer with and without the presence of sodium chloride for 4-hours. Among these treatments the electrolysis proved to kill the coliforms, while the freezing reduced the bacterial content. Antibiotics sensitivity patterns revealed that certain of the coliform strains survived the freezing and thawing shocks. Nature of such surviving bacteria and need to study chemical parameters of electrolyzed water are discussed. (author)

  6. Conversion Coatings Produced on AZ61 Magnesium Alloy by Low-Voltage Process

    Directory of Open Access Journals (Sweden)

    Nowak M.

    2016-03-01

    Full Text Available The resultes of anodic oxide conversion coatings on wrought AZ61 magnesium alloy production are describe. The studies were conducted in a solution containing: KOH (80 g/l and KF (300 g/l using anodic current densities of 3, 5 and 10 A/dm2 and different process durations. The obtained coatings were examined under a microscope and corrosion tests were performed by electrochemical method. Based on these results, it was found that the low-voltage process produces coatings conferring improved corrosion resistance to the tested magnesium alloy.

  7. Successful application of Low Voltage Electron Microscopy to practical materials problems

    International Nuclear Information System (INIS)

    Bell, David C.; Mankin, Max; Day, Robert W.; Erdman, Natasha

    2014-01-01

    Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron, decreased delocalization effects and reduced knock-on damage. Imaging at differing voltages has shown advantages for imaging materials that are knock-on damage sensitive. We show experimentally that different materials systems benefit from low voltage high-resolution microscopy. There are advantages for imaging single layer materials such as graphene at below the knock-on threshold; we present an example of imaging a graphene sheet at 40 kV. We have also examined mesoporous silica decorated with Pd nanoparticles and carbon black functionalized with Pd/Pt nanoparticles. In these cases we show that the lower voltage imaging maintains the structure of the surrounding matrix during imaging, whereas aberration correction provides the higher resolution for imaging the nanoparticle lattice. Perhaps surprisingly we show that zeolites damage preferentially by ionization effects (radiolysis). The current literature suggests that below incident energies of 40 kV the damage is mainly radiolitic, whereas at incident energies above 200 kV the knock-on damage and material sputtering will be the dominant effect. Our experimental observations support this conclusion and the effects we have observed at 40 kV are not indicative of knock-on damage. Other nanoscale materials such as thin silicon nanowires also benefit from lower voltage imaging. LVHREM imaging provides an excellent option to avoid beam damage to nanowires; our results suggest that LVHREM is suitable for nanowire-biological composites. Our experimental observations serve as a clear demonstration that even at 40 keV accelerating voltage, LVHREM can be used without inducing beam damage to locate dislocations and other crystalline defects, which may have adverse effects on nanowire device performance. Low voltage operation will likely

  8. Effects of a low-voltage static electric field on energy metabolism in astrocytes.

    Science.gov (United States)

    Huang, R; Peng, L; Hertz, L

    1997-01-01

    Mouse astrocytes (glial cells) in primary cultures were exposed to a low-voltage static DC electric field with no current flow and thus with no generation of magnetic fields. The electric field altered the rate of glycolysis, measured by 2-deoxyglucose accumulation. The magnitude and direction of this effect depended on the polarization of the field and the applied voltage. The maximum effect was an increase of approximately 30%, which occurred with field across the cells at an intensity that can be calculated to be 0.3 mV/cm or less. Reversal of the polarization converted the stimulation to a small but statistically significant inhibition.

  9. Low-Voltage Ride-Through of Variable Speed Wind Turbines with Permanent Magnet Synchronous Generator

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2009-01-01

    This paper presents a simulation model of a MW-level variable speed wind turbine with a permanent magnet synchronous generator (PMSG) and a full-scale converter developed in the simulation tool of PSCAD/EMTDC. The low voltage ride-through (LVRT) capability of the wind turbine is investigated. A new...... control scheme for the wind turbine that keeps it connected to the grid during grid faults is designed and simulated. Its design has special focus on the regulation of the DC-link voltage. Simulation results show the proposed control scheme is an effective measure to improve LVRT capability of variable...

  10. Telecontrol and telemanagement over low voltage mains distribution network. Telemeting en telebesturing via het elektriciteitsnet

    Energy Technology Data Exchange (ETDEWEB)

    Homer, G [Thorn Security Ltd., London (UK); De Snoo, J K [Intechmij BV, Diemen (Netherlands)

    1990-11-01

    Mainsborne Telecontrol, now being manufactured by Thorn Security Ltd., is an integrated system for automatic meter reading, intelligent load control and real time feedback. The system is designed to respond to today's economic, social and political pressures for the better use of energy, reduced operating costs and greater customer satisfaction. Research and the application of modern electronics technology to solving the problems for achieving reliable two-way data communication over low voltage mains distribution network had opened up significant opportunities for supply authorities to provide a new range of services, aiding both themselves and their customers. London Electricity is now introducing tried, tested and available technology. 2 figs.

  11. Optimal Design of DC Fast-Charging Stations for EVs in Low Voltage Grids

    DEFF Research Database (Denmark)

    Gjelaj, Marjan; Træholt, Chresten; Hashemi Toghroljerdi, Seyedmostafa

    2017-01-01

    DC Fast Charging Station (DCFCS) is essential for widespread use of Electric Vehicle (EVs). It can recharge EVs in direct current in a short period of time. In recent years, the increasing penetration of EVs and their charging systems are going through a series of changes. This paper addresses...... on the power grid through the application of electrical storage systems within the DC fast charging stations. The proposed solution decreases the charging time and the impact on the low voltage (LV) grid significantly. The charger can be used as a multifunctional grid-utility such as congestion management...

  12. A novel water resistor divider with a coaxial low-voltage arm.

    Science.gov (United States)

    Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

    2010-03-01

    A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

  13. Magnetic lens apparatus for a low-voltage high-resolution electron microscope

    Science.gov (United States)

    Crewe, Albert V.

    1996-01-01

    A lens apparatus in which a beam of charged particles of low accelerating voltage is brought to a focus by a magnetic field, the lens being situated behind the target position. The lens comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. The lens apparatus comprises the sole focusing lens for high-resolution imaging in a low-voltage scanning electron microscope.

  14. Integration of 100% Micro-Distributed Energy Resources in the Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    You, Shi; Segerberg, Helena

    2014-01-01

    of heat pumps (HPs) and plug-in electric vehicles (PEVs) at 100% penetration level on a representative urban residential low voltage (LV) distribution network of Denmark are investigated by performing a steady-state load flow analysis through an integrated simulation setup. Three DERs integration...... oriented integration strategies, having 100% integration of DER in the provided LV network is feasible.......The existing electricity infrastructure may to a great extent limit a high penetration of the micro-sized Distributed Energy Resources (DERs), due to the physical bottlenecks, e.g. thermal capacitates of cables, transformers and the voltage limitations. In this study, the integration impacts...

  15. Design Margin Elimination Through Robust Timing Error Detection at Ultra-Low Voltage

    OpenAIRE

    Reyserhove, Hans; Dehaene, Wim

    2017-01-01

    This paper discusses a timing error masking-aware ARM Cortex M0 microcontroller system. Through in-path timing error detection, operation at the point-of-first-failure is possi- ble without corrupting the pipeline state, effectively eliminat- ing traditional timing margins. Error events are flagged and gathered to allow dynamic voltage scaling. The error-aware microcontroller was implemented in a 40nm CMOS process and realizes ultra-low voltage operation down to 0.29V at 5MHz consuming 12.90p...

  16. Separating topographical and chemical analysis of nanostructure of polymer composite in low voltage SEM

    International Nuclear Information System (INIS)

    Wan, Q; Plenderleith, R A; Claeyssens, F; Rodenburg, C; Dapor, M; Rimmer, S

    2015-01-01

    The possibility of separating the topographical and chemical information in a polymer nano-composite using low-voltage SEM imaging is demonstrated, when images are acquired with a Concentric Backscattered (CBS) detector. This separation of chemical and topographical information is based on the different angular distribution of electron scattering which were calculated using a Monte Carlo simulation. The simulation based on angular restricted detection was applied to a semi-branched PNIPAM/PEGDA interpenetration network for which a linear relationship of topography SEM contrast and feature height data was observed. (paper)

  17. Loss of Synchronism of Wind Turbine Converters during Low Voltage Grid Faults

    DEFF Research Database (Denmark)

    Göksu, Ömer; Sørensen, Poul Ejnar; Iov, Florin

    2014-01-01

    In the recent grid codes, wind power plants are required to stay connected and inject reactive and active currents during grid short-circuit faults, even when the grid voltage drops down to zero. However, the physical fact, Loss of Synchronism (LOS) of wind turbines during these very low voltage ...... as whole. Additionally, existing methods to solve the LOS problem are briefly reviewed, and a closed loop frequency based solution is implemented within PowerFactory simulations of a detailed generic wind power plant model....

  18. Surge Protection in Low-Voltage AC Power Circuits: An Anthology

    Science.gov (United States)

    Martzloff, F. D.

    2002-10-01

    The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

  19. Optical fiber imaging for high speed plasma motion diagnostics: Applied to low voltage circuit breakers

    International Nuclear Information System (INIS)

    McBride, J. W.; Balestrero, A.; Tribulato, G.; Ghezzi, L.; Cross, K. J.

    2010-01-01

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1x10 6 images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  20. Lumped transmission line avalanche pulser

    Science.gov (United States)

    Booth, Rex

    1995-01-01

    A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

  1. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  2. Three-phase Power Flow Calculation of Low Voltage Distribution Network Considering Characteristics of Residents Load

    Science.gov (United States)

    Wang, Yaping; Lin, Shunjiang; Yang, Zhibin

    2017-05-01

    In the traditional three-phase power flow calculation of the low voltage distribution network, the load model is described as constant power. Since this model cannot reflect the characteristics of actual loads, the result of the traditional calculation is always different from the actual situation. In this paper, the load model in which dynamic load represented by air conditioners parallel with static load represented by lighting loads is used to describe characteristics of residents load, and the three-phase power flow calculation model is proposed. The power flow calculation model includes the power balance equations of three-phase (A,B,C), the current balance equations of phase 0, and the torque balancing equations of induction motors in air conditioners. And then an alternating iterative algorithm of induction motor torque balance equations with each node balance equations is proposed to solve the three-phase power flow model. This method is applied to an actual low voltage distribution network of residents load, and by the calculation of three different operating states of air conditioners, the result demonstrates the effectiveness of the proposed model and the algorithm.

  3. Coordinated Low Voltage Ride through strategies for Permanent Magnet Direct Drive Synchronous Generators

    Directory of Open Access Journals (Sweden)

    Zhang Ge

    2016-01-01

    Full Text Available By analyzing the mechanism of the low voltage ride through on the permanent magnet direct drive synchronous wind power generating units, this paper proposes a coordinated control strategy for permanent magnet synchronous generator. In order to avoid over speed operation of the generation units, over voltage on DC capacitor and over current on convert, the improved pitch angle control and inverter control are used. When the grid voltage drops, the captured wind power is cut down by the variable pitch system, which limits the speed of the generator, the generator side converter keeps the DC capacitor voltage stabile; and the grid side converter provides reactive power to the grid to help the grid voltage recover. The control strategy does not require any additional hardware equipment, with existing control means, the unit will be able to realize low voltage ride through. Finally, based on Matlab/Simulink to build permanent magnet direct drive wind power generation system, the simulation results verify the correctness and effectiveness of the control strategy.

  4. Statistical Feature Extraction for Fault Locations in Nonintrusive Fault Detection of Low Voltage Distribution Systems

    Directory of Open Access Journals (Sweden)

    Hsueh-Hsien Chang

    2017-04-01

    Full Text Available This paper proposes statistical feature extraction methods combined with artificial intelligence (AI approaches for fault locations in non-intrusive single-line-to-ground fault (SLGF detection of low voltage distribution systems. The input features of the AI algorithms are extracted using statistical moment transformation for reducing the dimensions of the power signature inputs measured by using non-intrusive fault monitoring (NIFM techniques. The data required to develop the network are generated by simulating SLGF using the Electromagnetic Transient Program (EMTP in a test system. To enhance the identification accuracy, these features after normalization are given to AI algorithms for presenting and evaluating in this paper. Different AI techniques are then utilized to compare which identification algorithms are suitable to diagnose the SLGF for various power signatures in a NIFM system. The simulation results show that the proposed method is effective and can identify the fault locations by using non-intrusive monitoring techniques for low voltage distribution systems.

  5. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  6. Degradation diagnosing method for low voltage electric wire and cable in nuclear facility

    International Nuclear Information System (INIS)

    Kamimura, Seiji; Seki, Ikuo; Yagyu, Hideki; Onishi, Takao; Kusama, Yasuo.

    1991-01-01

    A considerable skill is required for a visual inspection method which has been used most widely for determining the degradation of low voltage electric wires and cables used mostly in facilities such as nuclear power plants. It is extremely difficult to determine the degradation accurately and appropriately even for skilled inspectors because of individual difference. Then, a small amount of organic insulation materials is taken as a sample from insulators or sheath materials actually disposed. The pyrolytic temperature of the sample is measured by thermal gravimetric analysis to determine the extent of the degradation of the electric wire and cable based on the relationship between the degradation and the elongation. Since there is a close relationship between the temperature at which the measured weight of the sample is reduced by 5% and the degradation behavior of the mechanical property, analysis can be conducted effectively by an extremely small amount of the sample. Since the insulation degradation of relatively low voltage electric wires and cables can be determined in a non-destructive manner at high accuracy, the lifetime can be forecasted. (N.H.)

  7. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang Hui; Wan, Qing, E-mail: wanqing@nju.edu.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Qiang Zhu, Li, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Shi, Yi [School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-03-31

    Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

  8. A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

    Science.gov (United States)

    Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

    2016-04-01

    This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

  9. Decision Optimization for Power Grid Operating Conditions with High- and Low-Voltage Parallel Loops

    Directory of Open Access Journals (Sweden)

    Dong Yang

    2017-05-01

    Full Text Available With the development of higher-voltage power grids, the high- and low-voltage parallel loops are emerging, which lead to energy losses and even threaten the security and stability of power systems. The multi-infeed high-voltage direct current (HVDC configurations widely appearing in AC/DC interconnected power systems make this situation even worse. Aimed at energy saving and system security, a decision optimization method for power grid operating conditions with high- and low-voltage parallel loops is proposed in this paper. Firstly, considering hub substation distribution and power grid structure, parallel loop opening schemes are generated with GN (Girvan-Newman algorithms. Then, candidate opening schemes are preliminarily selected from all these generated schemes based on a filtering index. Finally, with the influence on power system security, stability and operation economy in consideration, an evaluation model for candidate opening schemes is founded based on analytic hierarchy process (AHP. And a fuzzy evaluation algorithm is used to find the optimal scheme. Simulation results of a New England 39-bus system and an actual power system validate the effectiveness and superiority of this proposed method.

  10. Induction and Conduction Electromagnetic Waves Caused by Lightning Strike on the Low Voltage Network

    Directory of Open Access Journals (Sweden)

    Reynaldo Zoro

    2010-10-01

    Full Text Available Direct and indirect lightning strikes can disturb and induce low voltage overheadlines and it can produced overvoltage due to traveling waves along the lines. This overvoltage can damage the equipments connected to it. It was recorded that there were already a lot of damages of electronic equipments and arrestesr located inside the building of Lightning Measurement Station at Mnt. Tangkuban Perahu. Most of the overvoltage which was developed on the low voltage lines were coming from indirect lightning strike nearby due to the fact that most of the lines were covered by trees. Research was carried out to study and evaluate the induction and conduction of the lightning strikes to the LV lines that can lead to the cause of equipment and arrester damages inside the building. Local lightning data for the analysis were derived from measurement system installed at the stations and historical lightning data from lightning detection network called Jadpen (National Lightning Detection Network. The data was used for calculating and evaluating the voltage elevation, induction voltage profiles and conduction in the form of traveling waves using Rusck Model. Two damaged arresters were evaluated and compared and it give the better understanding on how the protection system work.Keywords: 

  11. The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

  12. Photodiodes utilization as ionizing radiation detectors

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A. de

    1987-01-01

    The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

  13. STUDY ON SIMULATION METHOD OF AVALANCHE : FLOW ANALYSIS OF AVALANCHE USING PARTICLE METHOD

    OpenAIRE

    塩澤, 孝哉

    2015-01-01

    In this paper, modeling for the simulation of the avalanche by a particle method is discussed. There are two kinds of the snow avalanches, one is the surface avalanche which shows a smoke-like flow, and another is the total-layer avalanche which shows a flow like Bingham fluid. In the simulation of the surface avalanche, the particle method in consideration of a rotation resistance model is used. The particle method by Bingham fluid is used in the simulation of the total-layer avalanche. At t...

  14. Avalanche hazard and control in Kazakhstan

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2014-01-01

    Full Text Available In Kazakhstan, area of 124 thousand km2 is prone to the avalanche hazard. Avalanches are released down in mountain regions situated along the eastern boundary of Kazakhstan. Systematic studies of avalanches here were started in 1958 by explorer I.S. Sosedov; later on, I.V. Seversky continued these investigations in Institute of Geography of the Kazakh Soviet Republic. Actually, he founded the Kazakh school of the avalanche studies. In 1970–1980s, five snow-avalanche stations operated in Kazakhstan: two in Il’ Alatau, two in Zhetysu Alatau, and one in the Altai. At the present time, only two stations and two snow-avalanche posts operate, and all of them are located in Il’ Alatau.Since 1951 to 2013, 75 avalanches took place in Kazakhstan, releases of them caused significant damages. For this period 172 people happened to be under avalanches, among them 86 perished. Large avalanche catastrophes causing human victims and destructions took place in Altai in 1977 and in Karatau in 1990. In spring of 1966, only in Il’ Alatau avalanches destroyed more 600 ha of mature fir (coniferous forest, and the total area of forest destroyed here by avalanches amounts to 2677 ha or 7% of the total forest area.For 48 years of the avalanche observations, there were 15 winters with increased avalanche activity in the river Almatinka basin when total volume of released snow exceeded annual mean value of 147 thousand m3. During this period, number of days with winter avalanches changed from three (in season of 1973/1974 to 28 (1986/1987, the average for a year is 16 days for a season. Winter with the total volume of snow 1300 thousand m3 occur once in 150 years. Individual avalanches with maximal volume of 350 thousand m3 happen once in 80 years.Preventive avalanche releases aimed at protection of roads and settlements are used in Kazakhstan since 1974. These precautions are taken in Il’ Alatau, Altai, and on Kalbinsky Range. Avalanches are released with the

  15. Advances in gas avalanche photomultipliers

    CERN Document Server

    Breskin, Amos; Buzulutskov, A F; Chechik, R; Garty, E; Shefer, G; Singh, B K

    2000-01-01

    Gas avalanche detectors, combining solid photocathodes with fast electron multipliers, provide an attractive solution for photon localization over very large sensitive areas and under high illumination flux. They offer single-photon sensitivity and the possibility of operation under very intense magnetic fields. We discuss the principal factors governing the operation of gas avalanche photomultipliers. We summarize the recent progress made in alkali-halide and CVD-diamond UV-photocathodes, capable of operation under gas multiplication, and novel thin-film protected alkali-antimonide photocathodes, providing, for the first time, the possibility of operating gas photomultipliers in the visible range. Electron multipliers, adequate for these photon detectors, are proposed and some applications are briefly discussed.

  16. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Science.gov (United States)

    2016-01-20

    important in photon‐starved applications, such as night vision or high‐temporal‐resolution imaging. Interest in such scenarios lead to Lincoln’s...information of interest. Lincoln Laboratory’s long-term vision is to merge these functions, so that the work of information extraction is carried...M. Boroson, David O. Caplan, Constantine J. Digenis, David R. Hearn, and Ryan C. Shoup, "Design of an Optical Photon Counting Array Receiver System

  17. The development of a gamma ray detector based on micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Madatov, R.; Akberov, R.; Ahmadov, F.; Ahmadov, Q.; Sadiqov, A.; Suleymanov, S.; Nazarov, M.; Heydarov, N.; Valiev, R.; Nuriev, I.

    2015-01-01

    Prompt development of the nuclear industry provides the ample opportunities of application the products of this industry in the different spheres of human activity. Alongside their positive characteristics, application of nuclear technologies has negative aspects also. These are mostly ionizing radiation and pollution products of activities of the nuclear industry which are hazardous to health and human life activities. To identify and to control the polluted areas the special devices (dosimeters) are used, which are measuring the radiation in pulses per unit of time.Contemporary tendencies of development of gamma ray detection technologies require creation the devices superior the current samples by its characteristics. One of the main directions in this area is increasing the durability to changing conditions without deteriorating the main parameters of the detector.

  18. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD), Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Leveraging Phase I SBIR successes, in Phase II, a single photon sensitive LIDAR receiver will be fabricated and delivered to NASA. In Phase I, high-gain,...

  19. High Performance Avalanche Photodiodes for Photon Counting at 1064 nm, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The need for higher performance fiber optic telecommunications receivers has provided the impetus for substantial progress during the last decade in the...

  20. High Sensitivity Indium Phosphide Based Avalanche Photodiode Focal Plane Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — nLight has demonstrated highly-uniform APD arrays based on the highly sensitive InGaAs/InP material system. These results provide great promise for achieving the...

  1. A 500-MHz x-ray counting system with a silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Kishimoto, Shunji

    2009-01-01

    In the present measurements using a Si-APD X-ray detector and a 500-MHz counting system, the maximum output rate of 3.3x10 8 s -1 was achieved for 8-keV X-rays in beamline BL-14A of the Photon Factory. A small Si-APD of 4-pF electric capacity was used as the detector device in order to output a pulse of a width shorter than 2 ns on the baseline. For processing the fast pulses, the discriminator and the scaler having a throughput of >500 MHz, were prepared. Since the acceleration frequency at the PF ring was 500.1 MHz and the empty-bunch spacing was 12/312 bunches per circumference, the expected maximum rate was 4.8x10 8s-1 according to the counting model for a pulsed photon source. The reason why the present system did not reach the expected value was the baseline shift at the amplifier outputs. The rise of +0.2 V was observed at a discriminator output of 3.3x10 8 s -1 , while the pulse height was lower than 0.2 V. The baseline shift was caused by an AC coupling circuit in the amplifier. If a DC coupling circuit can be used for the amplifier, instead of the AC coupling circuit, or an active adjustment to compensate the baseline shift is installed, the counting system will show an ideal response. Although the present system including NIM modules was not so compact, we would like to develop a new fast-counting circuit for a Si-APD array detector of more than 100 channels of small pixels, in near future. (author)

  2. High Performance Avalanche Photodiodes for Photon Counting at 1064 nm, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The need for higher performance fiber optic telecommunications receivers has provided the impetus for substantial progress during the last decade in the...

  3. Low Voltage Ride-Through Capability Solutions for Permanent Magnet Synchronous Wind Generators

    Directory of Open Access Journals (Sweden)

    Victor F. Mendes

    2016-01-01

    Full Text Available Due to the increasing number of wind power plants, several countries have modified their grid codes to include specific requirements for the connection of this technology to the power system. One of the requirements is the ride-through fault capability (RTFC, i.e., the system capability to sustain operation during voltage sags. In this sense, the present paper intends to investigate the behavior of a full-converter wind generator with a permanent magnet synchronous machine during symmetrical and asymmetrical voltage sags. Two solutions to improve the low voltage ride-through capability (LVRT of this technology are analyzed: discharging resistors (brake chopper and resonant controllers (RCs. The design and limitations of these solutions and the others proposed in the literature are discussed. Experimental results in a 34 kW test bench, which represents a scaled prototype of a real 2 MW wind conversion system, are presented.

  4. Solution Processable Electrochemiluminescent Ion Gels for Flexible, Low Voltage, Emissive Displays on Plastic

    Science.gov (United States)

    Moon, Hong Chul; Lodge, Timothy P.; Frisbie, C. Daniel

    2014-03-01

    We have expanded the functionality of ion gels and successfully demonstrated low voltage, flexible electrochemiluminescent (ECL) devices using patterned ECL gels. An ECL device composed of only an emissive gel and two electrodes was fabricated on an ITO-coated substrate by solution casting the ECL gel and brush-painting the top silver electrode. The device turned on at an AC voltage as low as 2.6 V (-1.3 V ~ +1.3 V) and showed a relatively rapid response (sub-ms). Also, we varied the mechanical properties of the ECL gel simply by substituting polystyrene-block-poly(methyl methacrylate)-block-polystyrene (SMS) with commercially available poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-co-HFP)), enabling the fabrication of flexible ECL devices on any target substrate by the ``cut-and-stick'' strategy. This simple, rubbery ECL gel should be attractive for flexible electronics applications such as displays on packaging.

  5. A low-voltage high-speed terahertz spatial light modulator using active metamaterial

    Directory of Open Access Journals (Sweden)

    Saroj Rout

    2016-11-01

    Full Text Available An all solid-state metamaterial based terahertz (THz spatial light modulator (SLM is presented which uses high mobility 2DEG to manipulate the metamaterial resonant frequency (0.45 THz leading to terahertz wave modulation. The 2DEG is created by embedding pseudomorphic high-electron mobility transistors in the capacitive gap of each electrical-LC resonator, allowing the charge density to be controlled with very low voltage (1 V and modulating speeds up to 10 MHz while consuming sub-milliwatt power. We have demonstrated our SLM as a 2 × 2 pixel array operating around 0.45 THz by raster scanning a 6 × 6 image of an occluded metal object behind a thick polystyrene screen using a single-pixel THz imaging setup.

  6. Integration of distributed energy resources into low voltage grid: A market-based multiperiod optimization model

    Energy Technology Data Exchange (ETDEWEB)

    Mashhour, Elahe; Moghaddas-Tafreshi, S.M. [Faculty of Electrical Engineering, K.N. Toosi University of Technology, Seyd Khandan, P.O. Box 16315-1355, Shariati, Tehran (Iran)

    2010-04-15

    This paper develops a multiperiod optimization model for an interconnected micro grid with hierarchical control that participates in wholesale energy market to maximize its benefit (i.e. revenues-costs). In addition to the operational constraints of distributed energy resources (DER) including both inter-temporal and non-inter-temporal types, the adequacy and steady-state security constraints of micro grid and its power losses are incorporated in the optimization model. In the presented model, DER are integrated into low voltage grid considering both technical and economical aspects. This integration as a micro grid can participate in wholesale energy market as an entity with dual role including producer and consumer based on the direction of exchanged power. The developed model is evaluated by testing on a micro grid considering different cases and the results are analyzed. (author)

  7. An inductor-based converter with EMI reduction for low-voltage thermoelectric energy harvesting

    Science.gov (United States)

    Wang, Chuang; Zhao, Kai; Li, Zunchao

    2017-07-01

    This paper presents a self-powered inductor-based converter which harvests thermoelectric energy and boosts extremely low voltage to a typical voltage level for supplying body sensor nodes. Electromagnetic interference (EMI) of the converter is reduced by spreading spectrum of fundamental frequency and harmonics via pseudo-random modulation, which is obtained via combining the linear feedback shift register and digitally controlled oscillator. Besides, the methods, namely extracting energy near MPP and reducing the power dissipation, are employed to improve the power efficiency. The presented inductor-based converter is designed and verified in CSMC CMOS 0.18-µm 1P6M process. The results reveal that it achieves the high efficiency and EMI reduction at the same time.

  8. Flow reversal at low voltage and low frequency in a microfabricated ac electrokinetic pump

    DEFF Research Database (Denmark)

    Gregersen, Misha Marie; Olesen, Laurits Højgaard; Brask, Anders

    2007-01-01

    measured in a regime, where both the applied voltage and the frequency are low, Vrms1.5 V and f20 kHz, compared to previously investigated parameter ranges. The impedance spectrum has been thoroughly measured and analyzed in terms of an equivalent circuit diagram to rule out trivial circuit explanations......Microfluidic chips have been fabricated in Pyrex glass to study electrokinetic pumping generated by a low-voltage ac bias applied to an in-channel asymmetric metallic electrode array. A measurement procedure has been established and followed carefully resulting in a high degree of reproducibility...... of the measurements over several days. A large coverage fraction of the electrode array in the microfluidic channels has led to an increased sensitivity allowing for pumping measurements at low bias voltages. Depending on the ionic concentration a hitherto unobserved reversal of the pumping direction has been...

  9. Study on Control Scheme for the Inverters in Low Voltage Microgrid with Nonlinear Loads

    Science.gov (United States)

    Xu, Jiqiang; Lu, Wenzhou; Wu, Lei

    2017-05-01

    There are a lot of nonlinear loads in real low voltage microgrid system. It will cause serious output voltage and grid current harmonic distortions problems in island and grid-connected modes, respectively. To solve this problem, this paper proposes a droop control scheme with quasi-proportion and resonant (quasi-PR) controller based on αβ stationary reference frame to make microgrid smoothly switch between grid-connected and island modes without changing control method. Moreover, in island mode, not only stable output voltage and frequency, but also reduced output voltage harmonics with added nonlinear loads can be achieved; In grid-connected mode, not only constant power, but also reduced grid current harmonics can be achieved. Simulation results verify the effectiveness of the proposed control scheme.

  10. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

    International Nuclear Information System (INIS)

    Wu, Guodong; Wan, Changjin; Wan, Qing; Zhou, Jumei; Zhu, Liqiang

    2014-01-01

    Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO 2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics. (paper)

  11. Influence of Crowbar and Chopper Protection on DFIG during Low Voltage Ride Through

    Directory of Open Access Journals (Sweden)

    Rita M. Monteiro Pereira

    2018-04-01

    Full Text Available The energy sector is evolving rapidly, namely due to the increasing importance of renewable energy sources. The connection of large amounts of wind power generation poses new challenges for the dynamic voltage stability analysis of an electric power system, which has to be studied. In this paper, the traditional Doubly-Fed Induction Generator model is employed. Based on this model, a crowbar and chopper circuit is set up to protect the turbine during the short-circuit period. The EUROSTAG software package was used for the simulation studies of the system, and numerical results were obtained. Conclusions are drawn that provide a better understanding of the influence of crowbar and chopper protection on Doubly-Fed Induction Generators (DFIG, during low voltage ride through, in a system with wind power generation.

  12. Development of halogen-free, heat-resistant, low-voltage wire for automotive use

    International Nuclear Information System (INIS)

    Ueno, Keiji; Suzuki, Sizuo; Takahagi, Masatoshi; Uda, Ikujiro

    1995-01-01

    The environmental load of our motorized society is of major concern, and includes considerations of recycling of automotive parts as the industrial wastes. The total average length of AV, AVX (electrical wire insulated with PVC, cross-linked PVC), and AEX (electrical wire insulated with cross-linked polyolefin) wires required for the harnesses in modern automobiles is approximately 2,000-3,000 meters per unit. However these electrical wires contain a large amount of halogen, which can generate the smoke and corrosive gas. In response to this problem the authors have developed the electron beam irradiated halogen-free, heat-resistant, low-voltage electrical wire which does not contain any halogen based polymer or flame retardants. The developed wire features the reliability equivalent to AEX wire with minimum environmental load. (Author)

  13. Low voltage powering of on-detector electronics for HL-LHC experiments upgrades

    CERN Document Server

    Bobillier, Vincent; Vasey, Francois; Karmakar, Sabyasachi; Maity, Manas; Roy, Subhasish; Kundu, Tapas Kumar

    2018-01-01

    All LHC experiments will be upgraded during the next LHC long shutdowns (LS2 and LS3). The increase in resolution and luminosity and the use of more advanced CMOS technology nodes typically implies higher current consumption of the on-detector electronics. In this context, and in view of limiting the cable voltage drop, point-of-load DC-DC converters will be used on detector. This will have a direct impact on the existing powering scheme, implying new AC-DC and/or DC-DC stages as well as changes in the power cabling infrastructure. This paper presents the first results obtained while evaluating different LV powering schemes and distribution layouts for HL-LHC trackers. The precise low voltage power source requirements are being assessed and understood using the CMS tracker upgrade as a use-case.

  14. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

  15. A low-voltage fully balanced CMFF transconductor with improved linearity

    Science.gov (United States)

    Calvo, B.; Celma, S.; Alegre, J. P.; Sanz, M. T.

    2007-05-01

    This paper presents a new low-voltage pseudo-differential continuous-time CMOS transconductor for wideband applications. The proposed cell is based on a feedforward cancellation of the input common-mode signal and keeps the input common mode voltage constant, while the transconductance is easily tunable through a continuous bias voltage. Linearity is preserved during the tuning process for a moderate range of transconductance values. Simulation results for a 0.35 μm CMOS design show a 1:2 G m tuning range with an almost constant bandwidth over 600 MHz. Total harmonic distortion figures are below -60 dB over the whole range at 10 MHz up to a 200 μA p-p differential output. The proposed cell consumes less than 1.2 mW from a single 2.0 V supply.

  16. Merits of CMOS/SIMOX technology for low-voltage SRAM macros

    CERN Document Server

    Kumagai, K; Yamada, T; Nakamura, H; Onishi, H; Matsubara, Y; Imai, K; Kurosawa, S

    1999-01-01

    A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. As the $9 yield of the 128-kbit SRAM macros was almost the same as the standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD-CMOS/SIMOX technology has also been demonstrated. (7 refs).

  17. Methods and Strategies for Overvoltage Prevention in Low Voltage Distribution Systems with PV

    DEFF Research Database (Denmark)

    Hashemi Toghroljerdi, Seyedmostafa; Østergaard, Jacob

    2016-01-01

    to handle a high share of PV power. This paper provides an in-depth review of methods and strategies proposed to prevent overvoltage in LV grids with PV, and discusses the effectiveness, advantages, and disadvantages of them in detail. Based on the mathematical framework presented in the paper......, the overvoltage caused by high PV penetration is described, solutions to facilitate higher PV penetration are classified, and their effectiveness, advantages, and disadvantages are illustrated. The investigated solutions include the grid reinforcement, electrical energy storage application, reactive power...... absorption by PV inverters, application of active medium voltage to low voltage (MV/LV) transformers, active power curtailment, and demand response (DR). Coordination between voltage control units by localized, distributed, and centralized voltage control methods is compared using the voltage sensitivity...

  18. Evaluation of the Voltage Support Strategies for the Low Voltage Grid Connected PV

    DEFF Research Database (Denmark)

    Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

    2010-01-01

    Admissible range of grid voltage is one of the strictest constraints for the penetration of distributed photovoltaic (PV) generators especially connection to low voltage (LV) public networks. Voltage limits are usually fulfilled either by network reinforcements or limiting of power injections from...... PVs. In order to increase PV penetration level further, new voltage support control functions for individual inverters are required. This paper investigates distributed reactive power regulation and active power curtailment strategies regarding the development of PV connection capacity by evaluation...... of reactive power efforts and requirement of minimum active power curtailment. Furthermore, a small scale experimental setup is built to reflect real grid interaction in the laboratory by achieving critical types of grid (weak and sufficiently stiff)....

  19. An Optimized Reactive Power Control of Distributed Solar Inverters in Low Voltage Networks

    DEFF Research Database (Denmark)

    Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

    2011-01-01

    This study examines the reactive power ancillary services of solar inverters which are connected to low voltage (LV) distribution networks by giving attention to the grid voltage support service and grid losses. Two typical reference LV distribution network models as suburban and farm...... are introduced from the literature in order to evaluate contribution of two static droop strategies cosφ(P) and Q(U) on the grid voltage. Photovoltaic (PV) hosting capacities of the suburban and farm networks are estimated and the most predominant limitations of connecting more solar inverters are emphasized...... for each network type. Regarding the overloading of MV/LV distribution transformers, overloading of lines and the grid overvoltage limitations, new local grid voltage support methods (cosφ(P,U) and Q(U,P)) are also proposed. Resulting maximum allowable penetration levels with different reactive power...

  20. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  1. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  2. Design concept for radiation hardening of low power and low voltage dynamic memories

    International Nuclear Information System (INIS)

    Schleifer, H.; Ropp, T.V.D.; Reczek, W.

    1995-01-01

    A radiation hard low power, low voltage dynamic memory is obtained by the use of a dummy cell concept. Compared to conventional dummy cell concepts, this concept applies a fully sized dummy cell. By optimizing the dummy cell precharge voltage for 5 V and 3 V operation and the timing of the dummy word-line, the overall soft error rate (SER) of the chip is improved by 2 orders of magnitude. An additional improvement of 1 order of magnitude is possible for 3 V operation by adjusting substrate bias and cell plate voltage. The results are verified by an accelerated SER measurement with a radium 226 source and an additional field soft error study

  3. Detection of high-impedance fault in low-voltage DC distribution system via mathematical morphology

    Directory of Open Access Journals (Sweden)

    Yun-Sik Oh

    2016-01-01

    Full Text Available This study presents a method for high-impedance fault (HIF detection in a low-voltage DC (LVDC distribution system via mathematical morphology (MM, which is composed of two elementary transformations, namely, dilation and erosion. Various MM-based filters are used to detect abnormal signals of current waveform. The LVDC distribution system, including power conversion devices, such as AC/DC and DC/DC converters, is modelled with electromagnetic transient program (EMTP software to verify the proposed method. The HIF arc model in the DC system is also implemented with EMTP/MODELS, which is a symbolic language interpreter for EMTP. Simulation results show that the proposed method can be applied to detect HIF effectively in the LVDC distribution system.

  4. Velocity distribution in snow avalanches

    Science.gov (United States)

    Nishimura, K.; Ito, Y.

    1997-12-01

    In order to investigate the detailed structure of snow avalanches, we have made snow flow experiments at the Miyanomori ski jump in Sapporo and systematic observations in the Shiai-dani, Kurobe Canyon. In the winter of 1995-1996, a new device to measure static pressures was used to estimate velocities in the snow cloud that develops above the flowing layer of avalanches. Measurements during a large avalanche in the Shiai-dani which damaged and destroyed some instruments indicate velocities increased rapidly to more than 50 m/s soon after the front. Velocities decreased gradually in the following 10 s. Velocities of the lower flowing layer were also calculated by differencing measurement of impact pressure. Both recordings in the snow cloud and in the flowing layer changed with a similar trend and suggest a close interaction between the two layers. In addition, the velocity showed a periodic change. Power spectrum analysis of the impact pressure and the static pressure depression showed a strong peak at a frequency between 4 and 6 Hz, which might imply the existence of either ordered structure or a series of surges in the flow.

  5. Study on condition monitoring techniques for low voltage electrical cables in nuclear power plants

    International Nuclear Information System (INIS)

    Hirao, Hideo; Sakai, Takeshi; Kajimura, Yuusaku

    2017-01-01

    Low voltage electrical cables installed in nuclear power plants are required to maintain its function in a design basis accident environment and they are qualified to that environment. The cables degrade also in normal operating conditions due to ageing and they must maintain integrity until the end of their qualified life. Demands for the condition monitoring technique for low voltage electrical cables have therefore been increasing as nuclear power plants operate longer. A single perfect method for this purpose is not available yet, but the possibility to use two different types of methods which can complement with each other has been examined. The combination of Fourier Transform Infrared Spectroscopy (FT-IR) and Indenter Modulus (IM) method was found highly effective. FT-IR is a method that determines chemical properties (changes in molecular bindings) of cables by using infrared rays, while IM is a method that determines mechanical properties (changes in hardness) of cables by indenters. Both methods are non-destructive and can be applied in-situ to the same material. Reliability of the evaluation can be assured by applying two different types of measurement principles that complement with each other. In this study, various cable samples with different kinds of insulation material (cross-linked polyethylene, ethylene propylene rubber, silicone rubber etc.) were aged with a special accelerated ageing technique which applies simultaneous thermal and radiation ageing to simulate ageing phenomena in a more realistic manner, and the degree of ageing was evaluated with FT-IR and IM. The evaluation result shows good correlation with ageing time and other ageing properties for most material types and the effectiveness of these methods were demonstrated. (author)

  6. Avalanches and Criticality in Driven Magnetic Skyrmions

    Science.gov (United States)

    Díaz, S. A.; Reichhardt, C.; Arovas, D. P.; Saxena, A.; Reichhardt, C. J. O.

    2018-03-01

    We show using numerical simulations that slowly driven Skyrmions interacting with random pinning move via correlated jumps or avalanches. The avalanches exhibit power-law distributions in their duration and size, and the average avalanche shape for different avalanche durations can be scaled to a universal function, in agreement with theoretical predictions for systems in a nonequilibrium critical state. A distinctive feature of Skyrmions is the influence of the nondissipative Magnus term. When we increase the ratio of the Magnus term to the damping term, a change in the universality class of the behavior occurs, the average avalanche shape becomes increasingly asymmetric, and individual avalanches exhibit motion in the direction perpendicular to their own density gradient.

  7. Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

    International Nuclear Information System (INIS)

    Bickman, S.; DeMille, D.

    2005-01-01

    Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/√(Hz), can recover from a large scattered light pulse within 10 μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/√(Hz), also can recover from a large scattered light pulse within 10 μs, and has a bandwidth of 1 MHz

  8. A probabilistic model for snow avalanche occurrence

    Science.gov (United States)

    Perona, P.; Miescher, A.; Porporato, A.

    2009-04-01

    Avalanche hazard forecasting is an important issue in relation to the protection of urbanized environments, ski resorts and of ski-touring alpinists. A critical point is to predict the conditions that trigger the snow mass instability determining the onset and the size of avalanches. On steep terrains the risk of avalanches is known to be related to preceding consistent snowfall events and to subsequent changes in the local climatic conditions. Regression analysis has shown that avalanche occurrence indeed correlates to the amount of snow fallen in consecutive three snowing days and to the state of the settled snow at the ground. Moreover, since different type of avalanches may occur as a result of the interactions of different factors, the process of snow avalanche formation is inherently complex and with some degree of unpredictability. For this reason, although several models assess the risk of avalanche by accounting for all the involved processes with a great detail, a high margin of uncertainty invariably remains. In this work, we explicitly describe such an unpredictable behaviour with an intrinsic noise affecting the processes leading snow instability. Eventually, this sets the basis for a minimalist stochastic model, which allows us to investigate the avalanche dynamics and its statistical properties. We employ a continuous time process with stochastic jumps (snowfalls), deterministic decay (snowmelt and compaction) and state dependent avalanche occurrence (renewals) as a minimalist model for the determination of avalanche size and related intertime occurrence. The physics leading to avalanches is simplified to the extent where only meteorological data and terrain data are necessary to estimate avalanche danger. We explore the analytical formulation of the process and the properties of the probability density function of the avalanche process variables. We also discuss what is the probabilistic link between avalanche size and preceding snowfall event and

  9. Robust and Energy-Efficient Ultra-Low-Voltage Circuit Design under Timing Constraints in 65/45 nm CMOS

    Directory of Open Access Journals (Sweden)

    David Bol

    2011-01-01

    Full Text Available Ultra-low-voltage operation improves energy efficiency of logic circuits by a factor of 10×, at the expense of speed, which is acceptable for applications with low-to-medium performance requirements such as RFID, biomedical devices and wireless sensors. However, in 65/45 nm CMOS, variability and short-channel effects significantly harm robustness and timing closure of ultra-low-voltage circuits by reducing noise margins and jeopardizing gate delays. The consequent guardband on the supply voltage to meet a reasonable manufacturing yield potentially ruins energy efficiency. Moreover, high leakage currents in these technologies degrade energy efficiency in case of long stand-by periods. In this paper, we review recently published techniques to design robust and energy-efficient ultra-low-voltage circuits in 65/45 nm CMOS under relaxed yet strict timing constraints.

  10. A Study on the Measurement of Ultrasound Velocity to Evaluate Degradation of Low Voltage Cables for Nuclear Power Plants

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Cho; Kang, Suk Chull; Goo, Cheol Soo [Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of); Kim, Jin Ho; Park, Jae Seok; Joo, Geum Jong; Park, Chi Seung [KAITEC, Seoul (Korea, Republic of)

    2004-08-15

    Several kinds of low voltage cables have been used in nuclear power plants for the supply of electric power, supervision, and the propagation of control signals. These low voltage tables must be inspected for safe and stable operation of nuclear power plants. In particular, the degradation diagnosis to estimate the integrity of low voltage rabies has recently been emphasized according to the long use of nuclear power plants. In order to evaluate their degradation, the surrounding temperature, hardness of insulation material, elongation at breaking point (EAB), etc. have been used. However, the measurement of temperature or hardness is not useful because of the absence of quantitative criteria; the inspection of a sample requires turning off of the power plant power; and, the electrical inspection method is not sufficiently sensitive from the initial through the middle stage of degradation. In this research, based on the theory that the ultrasonic velocity changes with relation to the degradation of the material, we measured the ultrasonic velocity as low voltage cables were degraded. To this end, an ultrasonic degradation diagnosis device was developed and used to measure the ultrasonic velocity with the clothing on the cable, and it was confirmed that the ultrasonic velocity changes according to the degradation of low voltage cables. The low voltage cables used in nuclear power plants were degraded at an accelerated rate, and EAB was measured in a tensile test conducted after the measurement of ultrasonic velocity. With the increasing degradation degree, the ultrasonic velocity decreased, whose potential as a useful parameter for the quantitative degradation evaluation was thus confirmed

  11. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Science.gov (United States)

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Surges in low voltage distribution networks: some of conducted studies; Surtos em redes de baixa tensao: alguns estudos realizados

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-04-01

    This article presents an experience conducted by the Brazilian CELESC - Centrais Electricas de Santa Catarina, by installing two low voltage Si C lightning rods, one near of a batch of distribution transformers, and the other in the protection and measurement cabinet. That installation considered the high number of damages in transformers and meters in a region where 118 days of storm are detected. For the study, two regions presented similar climate characteristics and high number of damaged equipment. The low voltage lightning rods were installed only in one of the regions.

  13. Effect of Transportation and Low Voltage Electrical Stimulation on Meat Quality Characteristics of Omani Sheep

    Directory of Open Access Journals (Sweden)

    Isam T. Kadim

    2010-01-01

    Full Text Available The aim of this study was to determine the effects of road transportation during the hot season (36 oC and low voltage electrical stimulation on meat quality characteristics of Omani sheep. Twenty intact male sheep (1-year old were divided into two equal groups: 3 hrs transported or non-transported. The transported group was transferred to the slaughterhouse the day of slaughter in an open truck covering a distance of approximately 300 km. The non-transported group was kept in a lairage of a commercial slaughterhouse with ad libitum feed and water for 3 days prior to slaughter. Blood samples were collected from the animals before loading and prior to slaughter in order to assess their physiological response to stress in terms of hormonal levels. Fifty percent of the carcasses from each group were randomly assigned to low voltage (90 V at 20 min postmortem. Muscle ultimate pH, expressed juice, cooking loss percentage, WB-shear force value, sarcomere length, myofibrillar fragmentation index and colour L*, a*, b* were measured on samples from Longissimus dorsi muscles collected 24 hrs postmortem at 2-4 oC. The transported sheep had significantly (P<0.05 higher cortisol adrenaline, nor-adrenaline, and dopamine levels than the non-transported group. Muscles from electrically-stimulated carcasses had significantly (P<0.05 lower pH values, longer sarcomere length, lower shear force value, higher expressed juice, myofibrillar fragmentation index and L* values than those from non-stimulated ones. Transportation significantly influenced meat quality characteristics of the Longissimus dorsi muscle. Muscle ultimate pH and shear force values were significantly higher, while CIE L*, a*, b*, expressed juice and cooking loss were lower in transported than non-transported sheep. This study indicated that pre-slaughter transportation at high ambient temperatures can cause noticeable changes in muscle physiology in sheep. Nevertheless, meat quality of transported

  14. Performance and scalability of isolated DC-DC converter topologies in low voltage, high current applications

    Energy Technology Data Exchange (ETDEWEB)

    Vaisanen, V.

    2012-07-01

    Fuel cells are a promising alternative for clean and efficient energy production. A fuel cell is probably the most demanding of all distributed generation power sources. It resembles a solar cell in many ways, but sets strict limits to current ripple, common mode voltages and load variations. The typically low output voltage from the fuel cell stack needs to be boosted to a higher voltage level for grid interfacing. Due to the high electrical efficiency of the fuel cell, there is a need for high efficiency power converters, and in the case of low voltage, high current and galvanic isolation, the implementation of such converters is not a trivial task. This thesis presents galvanically isolated DC-DC converter topologies that have favorable characteristics for fuel cell usage and reviews the topologies from the viewpoint of electrical efficiency and cost efficiency. The focus is on evaluating the design issues when considering a single converter module having large current stresses. The dominating loss mechanism in low voltage, high current applications is conduction losses. In the case of MOSFETs, the conduction losses can be efficiently reduced by paralleling, but in the case of diodes, the effectiveness of paralleling depends strongly on the semiconductor material, diode parameters and output configuration. The transformer winding losses can be a major source of losses if the windings are not optimized according to the topology and the operating conditions. Transformer prototyping can be expensive and time consuming, and thus it is preferable to utilize various calculation methods during the design process in order to evaluate the performance of the transformer. This thesis reviews calculation methods for solid wire, litz wire and copper foil winding losses, and in order to evaluate the applicability of the methods, the calculations are compared against measurements and FEM simulations. By selecting a proper calculation method for each winding type, the winding

  15. Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

    Science.gov (United States)

    Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

    2016-09-14

    We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

  16. Simulation and Experimental Study of Arc Column Expansion After Ignition in Low-Voltage Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The dynamicprocess of arc pressure and corresponding arc column expansion, which is the main feature after arc ignition and has a significant effect on the breaking behaviour of low -voltage circuit breakers, is studied. By constructing a three dimensional mathematical model of air arc plasma and adopting the Control Volume Method, the parameters of arc plasma including temperature and pressure axe obtained. The variations of pressure field and temperature field with time are simulated. The result indicates that there are six stages for the process of arc column expansion according to the variation of pressure in arc chamber. In the first stage, the maximal pressure locates in the region close to cathode, and in the second stage the maximal pressure shifts to the region close to the anode. In the third stage, the pressure difference between the middle of arc column and the ambient gas is very large, so the arc column begins to expand apparently. In the fourth stage, the pressure wave propagates towards both ends and the maximal pressure appears at the two ends when the pressure wave reaches both sidewalls. In the fifth stage, the pressure wave is reflected and collides in the middle of the arc chamber. In the last stage, the propagation and reflection of pressure wave will repeat several times until a steady burning state is reached. In addition, the experimental results of arc column expansion, corresponding to the arc pressure variation, are presented to verify the simulation results.

  17. Control Strategy of Three-Phase Photovoltaic Inverter under Low-Voltage Ride-Through Condition

    Directory of Open Access Journals (Sweden)

    Xianbo Wang

    2015-01-01

    Full Text Available The new energy promoting community has recently witnessed a surge of developments in photovoltaic power generation technologies. To fulfill the grid code requirement of photovoltaic inverter under low-voltage ride-through (LVRT condition, by utilizing the asymmetry feature of grid voltage, this paper aims to control both restraining negative sequence current and reactive power fluctuation on grid side to maintain balanced output of inverter. Two mathematical inverter models of grid-connected inverter containing LCL grid-side filter under both symmetrical and asymmetric grid are proposed. PR controller method is put forward based on inverter model under asymmetric grid. To ensure the stable operation of the inverter, grid voltage feedforward method is introduced to restrain current shock at the moment of voltage drop. Stable grid-connected operation and LVRT ability at grid drop have been achieved via a combination of rapid positive and negative sequence component extraction of accurate grid voltage synchronizing signals. Simulation and experimental results have verified the superior effectiveness of our proposed control strategy.

  18. Plasma diagnostics with electrostatic probes in the reactive low voltage ion plating process

    International Nuclear Information System (INIS)

    Lechleitner, T.; Huber, D.; Pulker, H.K.

    2002-01-01

    The analysis of cold plasmas, which are used in thin film coating techniques, is mainly important for the understanding of the correlation between the film properties and the plasma (or the process) parameters. With the knowledge of these correlations, one is able to optimise and eventually improve the coating processes for the production of films with certain desirable properties. The plasma for the reactive-low-voltage-ion-plating processes is a cold non-isothermal plasma produced by a low-pressure dc non-self sustained arc discharge, controlled by two main parameters, the arc current and the total gas pressure in the chamber. It was shown that the arc current is in a direct linear relation to the degree of ionization and the increase of the total gas pressure has a contrary effect. Besides, it was also demonstrated, that the usage of electrostatic probes for the plasma analysis od deposition processes is a powerful tool to complete the common plasma monitor measurements (energy analysing quadrupol mass spectrometer) and to improve the understanding of industrially used plasma. (nevyjel)

  19. An integrated low-voltage rated HTS DC power system with multifunctions to suit smart grids

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Jian Xun, E-mail: jxjin@uestc.edu.cn [Center of Applied Superconductivity, School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China); Center of Applied Superconductivity and Electrical Engineering, School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Chen, Xiao Yuan [School of Engineering, Sichuan Normal University, Chengdu 610101 (China); Qu, Ronghai; Fang, Hai Yang [School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Xin, Ying [Center of Applied Superconductivity, School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China)

    2015-03-15

    Highlights: • A novel LVDC HTS power transmission network is presented. • An integrated power system is achieved by using HTS DC cable and SMES. • DC superconducting cable is verified to achieve self-acting fault current limitation. • SMES is verified to achieve fast-response buffering effect under a power fluctuation. • SMES is verified to achieve favorable load voltage protection effect under a fault. - Abstract: A low-voltage rated DC power transmission network integrated with superconducting cables (SCs) and superconducting magnetic energy storage (SMES) devices has been studied with analytic results presented. In addition to the properties of loss-less and high current transportation capacity, the effectively integrated system is formed with a self-acting fault current limitation feature of the SC and a buffering effect of the SMES to power fluctuations. The results obtained show that the integrated system can achieve high-quality power transmission under common power fluctuation conditions with an advanced self-protection feature under short circuit conditions, which is identified to suit especially the smart grid applications.

  20. Coordinated Control Strategies of VSC-HVDC-Based Wind Power Systems for Low Voltage Ride Through

    Directory of Open Access Journals (Sweden)

    Xinyin Zhang

    2015-07-01

    Full Text Available The Voltage Source Converter-HVDC (VSC-HVDC system applied to wind power generation can solve large scale wind farm grid-connection and long distance transmission problems. However, the low voltage ride through (LVRT of the VSC-HVDC connected wind farm is a key technology issue that must be solved, and it is currently lacking an economic and effective solution. In this paper, a LVRT coordinated control strategy is proposed for the VSC-HVDC-based wind power system. In this strategy, the operation and control of VSC-HVDC and wind farm during the grid fault period is improved. The VSC-HVDC system not only provides reactive power support to the grid, but also effectively maintains the power balance and DC voltage stability by reducing wind-farm power output, without increasing the equipment investment. Correspondingly, to eliminate the influence on permanent magnet synchronous generator (PMSG-based wind turbine (WT systems, a hierarchical control strategy is designed. The speed and validity of the proposed LVRT coordinated control strategy and hierarchical control strategy were verified by MATLAB/Simulink simulations.

  1. Coordinated control for low voltage ride-through of a PMSG-based wind power plant

    Directory of Open Access Journals (Sweden)

    Khagendra Thapa

    2016-01-01

    Full Text Available Wind turbine generators should be kept connected to a power grid, while supporting the voltage recovery in the case of a grid fault to meet low voltage ride-through requirement in some grid codes. This paper proposes a coordinated control scheme that prevents the increase in the DC-link voltage by reducing the active power in the machine side converter of permanent magnet synchronous generators (PMSGs in proportion to the voltage dip at the terminal of PMSGs. The proposed scheme changes the current priorities from the active current to the reactive current to inject more reactive power for a severe fault depending on the voltage dip. In addition, the grid-side converter operates in a voltage control mode with the slope, which is the ratio of reactive current capability to the voltage tolerance around a rated value. Moreover, during the fault, the slope is changed depending on the voltage dip to inject more reactive current. The performance of the proposed scheme is validated for a wind power plant consisting of 20 units of 5-MW PMSGs using an EMTP-RV simulator. The results demonstrate that the scheme enables the PMSGs not only to survive during the fault, but also to provide a dynamic reactive power support.

  2. Irreversible electroporation ablation area enhanced by synergistic high- and low-voltage pulses.

    Directory of Open Access Journals (Sweden)

    Chenguo Yao

    Full Text Available Irreversible electroporation (IRE produced by a pulsed electric field can ablate tissue. In this study, we achieved an enhancement in ablation area by using a combination of short high-voltage pulses (HVPs to create a large electroporated area and long low-voltage pulses (LVPs to ablate the electroporated area. The experiments were conducted in potato tuber slices. Slices were ablated with an array of four pairs of parallel steel electrodes using one of the following four electric pulse protocols: HVP, LVP, synergistic HVP+LVP (SHLVP or LVP+HVP. Our results showed that the SHLVPs more effectively necrotized tissue than either the HVPs or LVPs, even when the SHLVP dose was the same as or lower than the HVP or LVP doses. The HVP and LVP order mattered and only HVPs+LVPs (SHLVPs treatments increased the size of the ablation zone because the HVPs created a large electroporated area that was more susceptible to the subsequent LVPs. Real-time temperature change monitoring confirmed that the tissue was non-thermally ablated by the electric pulses. Theoretical calculations of the synergistic effects of the SHLVPs on tissue ablation were performed. Our proposed SHLVP protocol provides options for tissue ablation and may be applied to optimize the current clinical IRE protocols.

  3. Irreversible electroporation ablation area enhanced by synergistic high- and low-voltage pulses.

    Science.gov (United States)

    Yao, Chenguo; Lv, Yanpeng; Dong, Shoulong; Zhao, Yajun; Liu, Hongmei

    2017-01-01

    Irreversible electroporation (IRE) produced by a pulsed electric field can ablate tissue. In this study, we achieved an enhancement in ablation area by using a combination of short high-voltage pulses (HVPs) to create a large electroporated area and long low-voltage pulses (LVPs) to ablate the electroporated area. The experiments were conducted in potato tuber slices. Slices were ablated with an array of four pairs of parallel steel electrodes using one of the following four electric pulse protocols: HVP, LVP, synergistic HVP+LVP (SHLVP) or LVP+HVP. Our results showed that the SHLVPs more effectively necrotized tissue than either the HVPs or LVPs, even when the SHLVP dose was the same as or lower than the HVP or LVP doses. The HVP and LVP order mattered and only HVPs+LVPs (SHLVPs) treatments increased the size of the ablation zone because the HVPs created a large electroporated area that was more susceptible to the subsequent LVPs. Real-time temperature change monitoring confirmed that the tissue was non-thermally ablated by the electric pulses. Theoretical calculations of the synergistic effects of the SHLVPs on tissue ablation were performed. Our proposed SHLVP protocol provides options for tissue ablation and may be applied to optimize the current clinical IRE protocols.

  4. Evaluation of seismic resistance of low voltage switchgear, NPP V1 Jaslovske Bohunice, Slovakia

    International Nuclear Information System (INIS)

    Zeman, P.

    1999-01-01

    During this year, company Stevenson and Associates took part in the project of evaluation of seismic resistance of NPP V-1 Jaslovske Bohunice in Slovakia. It was responsible for a part of electrical equipment, mainly for the evaluation of low voltage switchgears. There were four steps of the evaluation: Detailed Walkdown; Application of GIP-WWER Methodology; Developing, of In Cabinet Response Spectra; and Evaluation of Acceptance of Formerly Performed Relay Tests According to the Russian Standard OEG l-330.00-3). Tests performed according to the Russian Standard OAG are acceptable only if the tested subject shows just one dominant natural frequency in the significant energy frequency range. If there is no knowledge of modal properties of the tested subject (that is a frequent situation because test reports usually contain only generalized Fourier loading spectrum) the enveloping of In Cabinet Response Spectra (ICRS) in all significant energy frequency ranges by Response Spectra (RS) of harmonic signal on one arbitrary frequency. This criteria is usually not satisfied because the shake tables used for the tests are not able to produce the sufficient level of excitation in the low frequency range. It may lead to the demand for test repeating

  5. Low-voltage Power Supply Subsystem for a Sub-Orbital Particle Physic Instrument

    Directory of Open Access Journals (Sweden)

    Hector Hugo Silva Lopez

    2014-01-01

    Full Text Available The Japanese Experiment Module–Extreme Universe Space Observatory (JEM-EUSO is a wide-field (+/-~30°of aperture 2.5m refractor telescope to be installed in the International Space Station (ISS. The instrument looks downward from its orbit, into Earth’s atmosphere, with the main objective of observing ultra-violet (UV fluorescence light generated by Ultra-High Energy Cosmic Rays (UHECR extensive air showers (EAS. It is a frontier particle-physics experiment, the first of its kind. The validation of the technical readiness level of such a complex and unique instrument requires prototypes at several levels of integration. At the highest level, the EUSO-Balloon instrument has been conceived, through French space agency (CNES. At a smaller scale and in suborbital flight, EUSO-Balloon integrates all the sub-systems of the full space JEM-EUSO telescope, allowing end-to-end testing of hardware and interfaces, and to probing the global detection chain and strategy, while improving at the same time our knowledge of atmospheric and terrestrial UV background. EUSO-Balloon will be flown by CNES for the first time from Timmins, Canada; on spring 2014.This article presents the low-voltage power supply (LVPS subsystem development for the EUSO-Balloon instrument. This LVPS is the fully operational prototype for the space instrument JEM-EUSO. Besides design and construction, all performance tests and integration results with the other involved subsystems are shown.

  6. Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length.

    Science.gov (United States)

    Bo, Renheng; Nasiri, Noushin; Chen, Hongjun; Caputo, Domenico; Fu, Lan; Tricoli, Antonio

    2017-01-25

    Accurate detection of UV light by wearable low-power devices has many important applications including environmental monitoring, space to space communication, and defense. Here, we report the structural engineering of ultraporous ZnO nanoparticle networks for fabrication of very low-voltage high-performance UV photodetectors. A record high photo- to dark-current ratio of 3.3 × 10 5 and detectivity of 3.2 × 10 12 Jones at an ultralow operation bias of 2 mV and low UV-light intensity of 86 μW·cm -2 are achieved by controlling the interplay between grain boundaries and surface depletion depth of ZnO nanoscale semiconductors. An optimal window of structural properties is determined by varying the particle size of ultraporous nanoparticle networks from 10 to 42 nm. We find that small electron-depleted nanoparticles (≤40 nm) are necessary to minimize the dark-current; however, the rise in photocurrent is tampered with decreasing particle size due to the increasing density of grain boundaries. These findings reveal that nanoparticles with a size close to twice their Debye length are required for high photo- to dark-current ratio and detectivity, while further decreasing their size decreases the photodetector performance.

  7. Realisation of low-voltage square-root-domain all-pass filters

    Directory of Open Access Journals (Sweden)

    Farooq A. Khanday

    2013-10-01

    Full Text Available Novel l ow-voltage first-order and second-order square-root-domain all-pass filters derived systematically by means of transfer function decomposition and state -space synthesis techniques are proposed. The employment of only a few geometric-mean cells and grounded capacitors permits the circuits to absorb shunt parasitic capacitances, which is desirable for production in monolithic form . The circuits enjoy the features of electronic adjustment of frequency characteristics, wider dynamic range and low-voltage environment operation. The filters are employed to design high-order all-pass filters using cascade approach. First-order low-pass and second-order band-pass filters, being the inherited building blocks of the proposed low-order all-pass filters are also discussed. The behaviour of the filters is evaluated through simulations using Taiwan semiconductor manufacturing company 0.25 μm level-3 complementary metal oxide semiconductor process parameters, where the most important performance factors are considered.

  8. High Current, Low Voltage Power Converter [20kA, 6V] LHC Converter Prototype

    CERN Document Server

    Jørgensen, H E; Dupaquier, A; Fernqvist, G

    1998-01-01

    The superconducting LHC accelerator requires high currents (~12.5kA) and relatively low voltages (~10 V) for its magnets. The need to install the power converters underground is the driving force for reduced volume and high efficiency. Moreover, the LHC machine will require a very high level of performance from the power converters, particularly in terms of DC stability, dynamic response and also in matters of EMC. To meet these requirements soft-switching techniques will be used. This paper describes the development of a [20kA,6V] power converter intended as a stable high-current source for D CCT calibration and an evaluation prototype for the future LHC converters. The converter is made with a modular concept with five current sources [4kA,6V] in parallel. The 4kA sources are built as plu g-in modules: a diode rectifier on the AC mains with a damped L-C passive filter, a Zero Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter...

  9. Application of optical diagnosis to aged low-voltage cable insulation in nuclear plants

    International Nuclear Information System (INIS)

    Katagiri, Junichi; Takezawa, Yoshitaka; Shouji, Hiroshi

    2008-01-01

    We have developed a novel non-destructive optical diagnosis technique for low-voltage cable insulations used in nuclear power plants. The key features of this diagnosis are the use of two wavelengths to measure the change in reflective absorbance (ΔA R ), the use of polarized light to measure crystallinity and the use of element volatilizing to measure fluorescence. Chemical kinetics is used to predict the lifetimes of the cable insulations. When cable insulations darken and harden by time degradation, the ΔA R and depolarization parameters increase. This means that the cross-linking density in the cable insulations increases due to deterioration reactions. When the cross-linking density of insulation increases, its elasticity, corresponding to the material's life, increases. Similarly, as the crystallinity increases due to the change in the high-order structure of the insulating resin caused by irradiation, its elongation property decreases. The elongation property of insulation is one of the most important parameters that can be used to evaluate material lifetimes, because it relates to elasticity. The ΔA R correlated with the elongation property, and the correlation coefficient of an accelerated experiment using model pieces was over 0.9. Thus, we concluded that this optical diagnosis should be applied to evaluate the degradation of cable insulations used in nuclear power plants. (author)

  10. An ultra-low-voltage electronic implementation of inertial neuron model with nonmonotonous Liao's activation function.

    Science.gov (United States)

    Kant, Nasir Ali; Dar, Mohamad Rafiq; Khanday, Farooq Ahmad

    2015-01-01

    The output of every neuron in neural network is specified by the employed activation function (AF) and therefore forms the heart of neural networks. As far as the design of artificial neural networks (ANNs) is concerned, hardware approach is preferred over software one because it promises the full utilization of the application potential of ANNs. Therefore, besides some arithmetic blocks, designing AF in hardware is the most important for designing ANN. While attempting to design the AF in hardware, the designs should be compatible with the modern Very Large Scale Integration (VLSI) design techniques. In this regard, the implemented designs should: only be in Metal Oxide Semiconductor (MOS) technology in order to be compatible with the digital designs, provide electronic tunability feature, and be able to operate at ultra-low voltage. Companding is one of the promising circuit design techniques for achieving these goals. In this paper, 0.5 V design of Liao's AF using sinh-domain technique is introduced. Furthermore, the function is tested by implementing inertial neuron model. The performance of the AF and inertial neuron model have been evaluated through simulation results, using the PSPICE software with the MOS transistor models provided by the 0.18-μm Taiwan Semiconductor Manufacturer Complementary Metal Oxide Semiconductor (TSM CMOS) process.

  11. Recycling potential for low voltage and high voltage high rupturing capacity fuse links.

    Science.gov (United States)

    Psomopoulos, Constantinos S; Barkas, Dimitrios A; Kaminaris, Stavros D; Ioannidis, George C; Karagiannopoulos, Panagiotis

    2017-12-01

    Low voltage and high voltage high-rupturing-capacity fuse links are used in LV and HV installations respectively, protecting mainly the LV and HV electricity distribution and transportation networks. The Waste Electrical and Electronic Equipment Directive (2002/96/EC) for "Waste of electrical and electronic equipment" is the main related legislation and as it concerns electrical and electronic equipment, it includes electric fuses. Although, the fuse links consist of recyclable materials, only small scale actions have been implemented for their recycling around Europe. This work presents the possibilities for material recovery from this specialized industrial waste for which there are only limited volume data. Furthermore, in order to present the huge possibilities and environmental benefits, it presents the potential for recycling of HRC fuses used by the Public Power Corporation of Greece, which is the major consumer for the country, but one of the smallest ones in Europe and globally, emphasizing in this way in the issue. According to the obtained results, fuse recycling could contribute to the effort for minimize the impacts on the environment through materials recovery and reduction of the wastes' volume disposed of in landfills. Copyright © 2017 Elsevier Ltd. All rights reserved.

  12. Implementation methodology for interoperable personal health devices with low-voltage low-power constraints.

    Science.gov (United States)

    Martinez-Espronceda, Miguel; Martinez, Ignacio; Serrano, Luis; Led, Santiago; Trigo, Jesús Daniel; Marzo, Asier; Escayola, Javier; Garcia, José

    2011-05-01

    Traditionally, e-Health solutions were located at the point of care (PoC), while the new ubiquitous user-centered paradigm draws on standard-based personal health devices (PHDs). Such devices place strict constraints on computation and battery efficiency that encouraged the International Organization for Standardization/IEEE11073 (X73) standard for medical devices to evolve from X73PoC to X73PHD. In this context, low-voltage low-power (LV-LP) technologies meet the restrictions of X73PHD-compliant devices. Since X73PHD does not approach the software architecture, the accomplishment of an efficient design falls directly on the software developer. Therefore, computational and battery performance of such LV-LP-constrained devices can even be outperformed through an efficient X73PHD implementation design. In this context, this paper proposes a new methodology to implement X73PHD into microcontroller-based platforms with LV-LP constraints. Such implementation methodology has been developed through a patterns-based approach and applied to a number of X73PHD-compliant agents (including weighing scale, blood pressure monitor, and thermometer specializations) and microprocessor architectures (8, 16, and 32 bits) as a proof of concept. As a reference, the results obtained in the weighing scale guarantee all features of X73PHD running over a microcontroller architecture based on ARM7TDMI requiring only 168 B of RAM and 2546 B of flash memory.

  13. Coordinated single-phase control scheme for voltage unbalance reduction in low voltage network.

    Science.gov (United States)

    Pullaguram, Deepak; Mishra, Sukumar; Senroy, Nilanjan

    2017-08-13

    Low voltage (LV) distribution systems are typically unbalanced in nature due to unbalanced loading and unsymmetrical line configuration. This situation is further aggravated by single-phase power injections. A coordinated control scheme is proposed for single-phase sources, to reduce voltage unbalance. A consensus-based coordination is achieved using a multi-agent system, where each agent estimates the averaged global voltage and current magnitudes of individual phases in the LV network. These estimated values are used to modify the reference power of individual single-phase sources, to ensure system-wide balanced voltages and proper power sharing among sources connected to the same phase. Further, the high X / R ratio of the filter, used in the inverter of the single-phase source, enables control of reactive power, to minimize voltage unbalance locally. The proposed scheme is validated by simulating a LV distribution network with multiple single-phase sources subjected to various perturbations.This article is part of the themed issue 'Energy management: flexibility, risk and optimization'. © 2017 The Author(s).

  14. A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

    Science.gov (United States)

    Guo, Jiarong

    2017-04-01

    A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

  15. Model Based Optimization of Integrated Low Voltage DC-DC Converter for Energy Harvesting Applications

    Science.gov (United States)

    Jayaweera, H. M. P. C.; Muhtaroğlu, Ali

    2016-11-01

    A novel model based methodology is presented to determine optimal device parameters for the fully integrated ultra low voltage DC-DC converter for energy harvesting applications. The proposed model feasibly contributes to determine the maximum efficient number of charge pump stages to fulfill the voltage requirement of the energy harvester application. The proposed DC-DC converter based power consumption model enables the analytical derivation of the charge pump efficiency when utilized simultaneously with the known LC tank oscillator behavior under resonant conditions, and voltage step up characteristics of the cross-coupled charge pump topology. The verification of the model has been done using a circuit simulator. The optimized system through the established model achieves more than 40% maximum efficiency yielding 0.45 V output with single stage, 0.75 V output with two stages, and 0.9 V with three stages for 2.5 kΩ, 3.5 kΩ and 5 kΩ loads respectively using 0.2 V input.

  16. A novel low-voltage operational amplifier for low-power pipelined ADCs

    International Nuclear Information System (INIS)

    Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian

    2009-01-01

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  17. Terrain Classification of Norwegian Slab Avalanche Accidents

    Science.gov (United States)

    Hallandvik, Linda; Aadland, Eivind; Vikene, Odd Lennart

    2016-01-01

    It is difficult to rely on snow conditions, weather, and human factors when making judgments about avalanche risk because these variables are dynamic and complex; terrain, however, is more easily observed and interpreted. Therefore, this study aimed to investigate (1) the type of terrain in which historical fatal snow avalanche accidents in Norway…

  18. Actinide oxide photodiode and nuclear battery

    Energy Technology Data Exchange (ETDEWEB)

    Sykora, Milan; Usov, Igor

    2017-12-05

    Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

  19. Spatial determination of magnetic avalanche ignition points

    International Nuclear Information System (INIS)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko; Sarachik, M.P.; Myasoedov, Y.; Zeldov, E.; Shtrikman, H.; Bagai, R.; Christou, G.

    2008-01-01

    Using time-resolved measurements of local magnetization in the molecular magnet Mn 12 -ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends

  20. Spatial determination of magnetic avalanche ignition points

    Energy Technology Data Exchange (ETDEWEB)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko [Physics Department, City College of the City University of New York, New York, NY 10031 (United States); Sarachik, M.P. [Physics Department, City College of the City University of New York, New York, NY 10031 (United States)], E-mail: sarachik@sci.ccny.cuny.edu; Myasoedov, Y.; Zeldov, E.; Shtrikman, H. [Department Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100 (Israel); Bagai, R.; Christou, G. [Department of Chemistry, University of Florida, Gainesville, FL 32611 (United States)

    2008-03-15

    Using time-resolved measurements of local magnetization in the molecular magnet Mn{sub 12}-ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends.

  1. A Low-Voltage Ride-Through Control Strategy for Three-Phase Grid-Connected PV Systems

    DEFF Research Database (Denmark)

    Afshari, Ehsan; Farhangi, Babak; Yang, Yongheng

    2017-01-01

    similar variations in the dc-link voltage of conventional two-stage PV inverters. In such systems with an electrolytic capacitor in the dc-link, the oscillations of the dc-link voltage with DGF can deteriorate the capacitor lifetime, and thus the entire system. The proposed Low-Voltage Ride-Through (LVRT...

  2. A Comprehensive Review of Low-Voltage-Ride-Through Methods for Fixed-Speed Wind Power Generators

    DEFF Research Database (Denmark)

    Moghadasi, Amirhasan; Sarwat, Arif; Guerrero, Josep M.

    2016-01-01

    This paper presents a comprehensive review of various techniques employed to enhance the low voltage ride through (LVRT) capability of the fixed-speed induction generators (FSIGs)-based wind turbines (WTs), which has a non-negligible 20% contribution of the existing wind energy in the world...

  3. Distributed Control to Ensure Proportional Load Sharing and Improve Voltage Regulation in Low-Voltage DC Microgrids

    DEFF Research Database (Denmark)

    Anand, Sandeep; G. Fernandes, Baylon; Guerrero, Josep M.

    2013-01-01

    DC microgrids are gaining popularity due to high efficiency, high reliability, and easy interconnection of renewable sources as compared to the ac system. Control objectives of dc microgrid are: 1) to ensure equal load sharing (in per unit) among sources; and 2) to maintain low-voltage regulation...

  4. A low-offset low-voltage CMOS Op Amp with rail-to-rail input and output ranges

    NARCIS (Netherlands)

    Holzmann, Peter J.; Wiegerink, Remco J.; Gierkink, Sander L.J.; Wassenaar, R.F.; Stroet, Peter; Stroet, P.M.

    1996-01-01

    A low voltage CMOS op amp is presented. The circuit uses complementary input pairs to achieve a rail-to-rail common mode input voltage range. Special attention has been given to the reduction of the op amp's systematic offset voltage. Gain boost amplifiers are connected in a special way to provide

  5. Thermal Optimized Operation of the Single-Phase Full-Bridge PV Inverter under Low Voltage Ride-Through Mode

    DEFF Research Database (Denmark)

    Wang, Huai; Yang, Yongheng; Blaabjerg, Frede

    2013-01-01

    The efficiency of 98% has been reported on transformer-less photovoltaic (PV) inverters and the penetration of grid-connected PV systems is booming as well. In the future, the PV systems are expected to contribute to the grid stability by means of low voltage ride-through operation and grid suppo...

  6. A Low-Voltage Ride-Through Technique for Grid-Connected Converters with Reduced Power Transistors Stress

    DEFF Research Database (Denmark)

    Chen, Hsin-Chih; Lee, Chia-Tse; Cheng, Po-Tai

    2016-01-01

    With more and more distributed energy resources being installed in the utility grid, grid operators start imposing the low-voltage ride-through requirement on such systems to remain grid-connected and inject reactive and/or active current to support grid voltage during fault conditions. This pape...

  7. Low-Voltage, Low-Power, and Wide-Tuning-Range Ring-VCO for Frequency ΔΣ Modulator

    DEFF Research Database (Denmark)

    Tuan Vu, Cao; Wisland, Dag T.; Lande, Tor Sverre

    A low-voltage, low-power, and wide-tuning-range VCO which converts an analog input voltage to phase information for a frequency ΔΣ modulator is proposed in this paper. The VCO is based on a differential ring oscillator, which is improved with modified symmetric load and a positive feedback...

  8. Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

    Directory of Open Access Journals (Sweden)

    Perić Dragoslav M.

    2015-01-01

    Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

  9. Photodiode measurements in Nucte-II

    International Nuclear Information System (INIS)

    Machida, M.; Aramaki, E.A.; Takahashi, T.; Ohara, M.; Nogi, N.

    1989-01-01

    Direct measurements of light emission from plasma produced by a field reversed theta-pinch NUCTE-II have been performed by using a set of photodiode detectors. The analysis shows that the plasma light emission can be related to the bremsstrahlung radiation and it is used to identify η=2 rotational instability parameters as rotation direction, angular velocity, and radial and axial displacement of the plasma column. A rough estimate for the temporal behaviour of the electro temperature has also been obtained by using the photodiode signal together with He-Ne laser interferometer and flux excluded signals. (author) [pt

  10. A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

    International Nuclear Information System (INIS)

    Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

    1992-01-01

    In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

  11. Results of a literature review on the environmental qualification of low-voltage electric cables

    International Nuclear Information System (INIS)

    Lofaro, R.; Lee, B.; Villaran, M.; Gleason, J.; Aggarwal, S.

    1995-01-01

    In the design of nuclear power plants in the US, safety-related electric equipment must be qualified to provide reasonable assurance it can withstand the effects of a design basis event (DBE) and still be able to perform its prescribed safety function, even if the accident were to occur at the end of its service life. The requirement for environmental qualification (EQ) originates from the General Design Criteria in the Code of Federal Regulations, Title 10, Part 50 (10 CFR 50). The acceptable method of performing the qualification of this equipment has evolved over the years, starting with the NRC Division of Operating Reactors (DOR) Guidelines, which were issued in Bulletin 79--01B, and NUREG-0588 requirements and ending with the current EQ Rule, 10 CFR 50.49. While the EQ methods described in these documents have the same overall objective, there are some notable differences for which a clear technical basis has not been established. One difference is the preaging requirement for equipment prior to LOCA testing. In addition, specific issues related to current EQ practices have been raised by the US NRC which need to be addressed. These issues, which are discussed in detail later in this paper, are related to the sources of conservatism and uncertainty in IEEE Standard 323--1974, which is the qualification standard currently endorsed by the NRC. To address these issues, the NRC Office of Nuclear Reactor Regulation (NRR) implemented a Task Action Plan (TAP), and the Office of Nuclear Reactor Research (RES) initiated a complementary research program. The current focus of this program is on the qualification of low-voltage instrumentation and control cables. These cables were selected since they are not typically replaced on a routine basis, and their degradation could impact plant safety

  12. The Design of Operational Amplifier for Low Voltage and Low Current Sound Energy Harvesting System

    Science.gov (United States)

    Fang, Liew Hui; Rahim, Rosemizi Bin Abd; Isa, Muzamir; Idris Syed Hassan, Syed; Ismail, Baharuddin Bin

    2018-03-01

    The objective of this paper is to design a combination of an operational amplifier (op-amp) with a rectifier used in an alternate current (ac) to direct current (dc) power conversion. The op-amp was designed to specifically work at low voltage and low current for a sound energy harvesting system. The goal of the op-amp design with adjustable gain was to control output voltage based on the objectives of the experiment conducted. The op-amp was designed for minimum power dissipation performance, with the means of increasing the output current when receiving a large amount of load. The harvesting circuits which designed further improved the power output efficiency by shortening the fully charged time needed by a supercapacitor bank. It can fulfil the long-time power demands for low power device. Typically, a small amount of energy sources were converted to electricity and stored in the supercapacitor bank, which was built by 10 pieces of capacitors with 0.22 F each, arranged in parallel connection. The highest capacitance was chosen based on the characteristic that have the longest discharging time to support the applications of a supercapacitor bank. Testing results show that the op-amp can boost the low input ac voltage (∼3.89 V) to high output dc voltage (5.0 V) with output current of 30 mA and stored the electrical energy in a big supercapacitor bank having a total of 2.2 F, effectively. The measured results agree well with the calculated results.

  13. Spatial Relationship of Focal Impulses, Rotors and Low Voltage Zones in Patients With Persistent Atrial Fibrillation.

    Science.gov (United States)

    Schade, Anja; Nentwich, Karin; Costello-Boerrigter, Lisa C; Halbfass, Philipp; Mueller, Patrick; Roos, Markus; Barth, Sebastian; Krug, Joachim; Szoelloesi, Geza-Atilla; Lapp, Harald; Deneke, Thomas

    2016-05-01

    Focal impulses (FI) and rotors are sources associated with the initiation and maintenance of atrial fibrillation (AF). Their ablation results in a lower recurrence rate. The aim of this study was to characterize for the first time the spatial relationship between such sources and atrial low voltage zones (LVZ) representing fibrosis. Twenty-five consecutive patients undergoing their first ablation for persistent AF were included. Voltage mapping of both atria was done during AF. Endocardial mapping of FI and rotors (sources) was performed using a basket catheter and displayed using RhythmView(TM) (Topera Inc.) before ablation. Spatial relationship of LVZ and sources was analyzed. LVZs covered 13 ± 12% of right atrial (RA) endocardial surface and 33 ± 25% of left atrial (LA) endocardial surface. The median number of sources was 1 [1-3] in RA and 3 [1-4] in LA. Of LA sources, 18 (30%) were definitely not associated with LVZs or pulmonary vein (PV) antra. Of RA sources, 32 (84%) were remote from LVZ. During ablation of such sources substantial cycle length (CL) prolongation or AF conversion occurred in 11/23 patients (48%). Altogether, 8/11 (73%) of these pertinent sources were located remotely from LVZ and PV antra. There is a wide discrepancy in distribution of LVZ areas and sites of identified rotors. Site and incidence of FIRM sources appear to be unpredictable with atrial substrate mapping. Further prospective, randomized studies are necessary to elucidate the impact of additional ablation of such sources in patients with persistent or longstanding persistent AF. © 2016 Wiley Periodicals, Inc.

  14. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

    International Nuclear Information System (INIS)

    Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

    2011-01-01

    This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

  15. Utilization of low voltage D-T neutron generators in neutron physics studies

    Energy Technology Data Exchange (ETDEWEB)

    Singkarat, S.

    1995-08-01

    In a small nuclear laboratory of a developing country a low voltage D-T neutron generator can be a very useful scientific apparatus. Such machines have been used successfully for more than 40 years in teaching and scientific research. The original continuous mode 150-kV D-T neutron generator has been modified to have also a capability of producing 2-ns pulsed neutrons. Together with a carefully designed 10 m long flight path collimator and shielding of a 25 cm diameter {center_dot} 10 cm thick BC-501 neutron detector, the pulsing system was successfully used for measuring the double differential cross-section (DDX) of natural iron for 14.1-MeV neutron from the angle of 30 deg to 150 deg in 10 deg steps. In order to extend the utility of the generator, two methods for converting the almost monoenergetic 14-MeV neutrons to monoenergetic neutrons of lower energy were proposed and tested. The first method uses a pulsed neutron generator and the second method uses an ordinary continuous mode generator. The latter method was successfully used to measure the scintillation light output of a 1.4 cm diameter spherical NE-213 scintillation detector. The neutron generator has also been used in the continuous search for improved neutron detection techniques. There is a proposal, based on Monte Carlo calculations, of using a scintillation fiber for a fast neutron spectrometer. Due to the slender shape of the fiber, the pattern of produced light gives a peak in the pulse height spectrum instead of the well-known rectangular-like distribution, when the fiber is bombarded end-on by a beam of 14-MeV neutrons. Experimental investigations were undertaken. Detailed investigations on the light transportation property of a short fiber were performed. The predicted peak has not yet been found but the fiber detector may be developed as a directional discrimination fast neutron detector. 18 refs.

  16. Fast Self-Synchronization between LowVoltage Microgrid and Inverter using Virtual Synchronous Converter

    Directory of Open Access Journals (Sweden)

    Md Ruhul Amin

    2017-12-01

    Full Text Available In this paper, a fast self-synchronization known as virtual synchronous converter (VSCon between single-phase microgrid and inverter in low-voltage microgrid, has been developed in Matlab/Simulink. The idea is to any phase locked loop (PLL circuit for inverter-microgrid synchronization in order to improve the synchronization time. As known, it is difficult and lengthy process to tune the PLL gain parameters to reach suitable performance for synchronizing among the voltage, phase-angle and frequency between them. Due to this problem, a fast self synchronization technique is needed in order to minimize the time losses at the microgrid connection. Therefore, the VSCon has been developed which is based on the synchronous generator mathematical model but in virtual environment representation. It has been applied in the inverter control for generating switching pattern to the inverter switches in order to respond to the grid voltage for improve the synchronization. For a prove of concept, several simulation tests in MATLAB models have been conducted, in order to see the effectiveness of this VSCon. First test has been conducted, when a 240V, 50Hz frequency grid source is used for observing the self-synchronization the system with the power flows output. Furthermore, the next test is conducted when the grid frequency is changed from the rated frequency at 50Hz to 51Hz and the result shows the VSCon in inverter control takes nearly 40ms to synchronize to this new frequency value. The test on grid phase-angle delay also been tested when ac grid voltage has 150 phase delay. As from all the results, the improved inverter control with VSCon structure is able to have fast and self-synchronized between the invertergrid connection before the power from the inverter can be transferred.

  17. Nonlinear Robust Control for Low Voltage Direct-Current Residential Microgrids with Constant Power Loads

    Directory of Open Access Journals (Sweden)

    Martín-Antonio Rodríguez-Licea

    2018-05-01

    Full Text Available A Direct Current (DC microgrid is a concept derived from a smart grid integrating DC renewable sources. The DC microgrids have three particularities: (1 integration of different power sources and local loads through a DC link; (2 on-site power source generation; and (3 alternating loads (on-off state. This kind of arrangement achieves high efficiency, reliability and versatility characteristics. The key device in the development of the DC microgrid is the power electronic converter (PEC, since it allows an efficient energy conversion between power sources and loads. However, alternating loads with strictly-controlled PECs can provide negative impedance behavior to the microgrid, acting as constant power loads (CPLs, such that the overall closed-loop system becomes unstable. Traditional CPL compensation techniques rely on a damping increment by the adaptation of the source or load voltage level, adding external circuitry or by using some advanced control technique. However, none of them provide a simple and general solution for the CPL problem when abrupt changes in parameters and/or in alternating loads/sources occur. This paper proposes a mathematical modeling and a robust control for the basic PECs dealing with CPLs in continuous conduction mode. In particular, the case of the low voltage residential DC microgrid with CPLs is taken as a benchmark. The proposed controller can be easily tuned for the desired response even by the non-expert. Basic converters with voltage mode control are taken as a basis to show the feasibility of this analysis, and experimental tests on a 100-W testbed include abrupt parameter changes such as input voltage.

  18. A differential low-voltage high gain current-mode integrated RF receiver front-end

    Energy Technology Data Exchange (ETDEWEB)

    Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

    2011-02-15

    A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

  19. Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

    Science.gov (United States)

    Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

    2016-04-01

    The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

  20. Low voltage-activated calcium channels gate transmitter release at the dorsal root ganglion sandwich synapse.

    Science.gov (United States)

    Rozanski, Gabriela M; Nath, Arup R; Adams, Michael E; Stanley, Elise F

    2013-11-15

    A subpopulation of dorsal root ganglion (DRG) neurons are intimately attached in pairs and separated solely by thin satellite glial cell membrane septa. Stimulation of one neuron leads to transglial activation of its pair by a bi-, purinergic/glutamatergic synaptic pathway, a transmission mechanism that we term sandwich synapse (SS) transmission. Release of ATP from the stimulated neuron can be attributed to a classical mechanism involving Ca(2+) entry via voltage-gated calcium channels (CaV) but via an unknown channel type. Specific blockers and toxins ruled out CaV1, 2.1 and 2.2. Transmission was, however, blocked by a moderate depolarization (-50 mV) or low-concentration Ni(2+) (0.1 mM). Transmission persisted using a voltage pulse to -40 mV from a holding potential of -80 mV, confirming the involvement of a low voltage-activated channel type and limiting the candidate channel type to either CaV3.2 or a subpopulation of inactivation- and Ni(2+)-sensitive CaV2.3 channels. Resistance of the neuron calcium current and SS transmission to SNX482 argue against the latter. Hence, we conclude that inter-somatic transmission at the DRG SS is gated by CaV3.2 type calcium channels. The use of CaV3 family channels to gate transmission has important implications for the biological function of the DRG SS as information transfer would be predicted to occur not only in response to action potentials but also to sub-threshold membrane voltage oscillations. Thus, the SS synapse may serve as a homeostatic signalling mechanism between select neurons in the DRG and could play a role in abnormal sensation such as neuropathic pain.

  1. Energy and dissipated work in snow avalanches

    Science.gov (United States)

    Bartelt, P.; Buser, O.

    2004-12-01

    Using the results of large scale avalanche experiments at the Swiss Vallée de la Sionne test site, the energy balance of several snow avalanches is determined. Avalanches convert approximately one-seventh of their potential energy into kinetic energy. The total potential energy depends strongly on the entrained snowcover, indicating that entrainment processes cannot be ignored when predicting terminal velocities and runout distances. We find energy dissipation rates on the order of 1 GW. Fluidization of the fracture slab can be identified in the experiments as an increase in dissipation rate, thereby explaining the initial and rapid acceleration of avalanches after release. Interestingly, the dissipation rates appear to be constant along the track, although large fluctuations in internal velocity exist. Thus, we can demonstrate within the context of non-equilibrium thermodynamics that -- in space -- granular snow avalanches are irreversible, dissipative systems that minimize entropy production because they appear to reach a steady-state non-equilibrium. A thermodynamic analysis reveals that fluctuations in velocity depend on the roughness of the flow surface and viscosity of the granular system. We speculate that this property explains the transition from flowing avalanches to powder avalanches.

  2. Hybrid amplifier for calorimetry with photodiode readout

    Energy Technology Data Exchange (ETDEWEB)

    Sushkov, V V

    1994-12-31

    A hybrid surface mounted amplifier for the photodiode readout of the EM calorimeter has been developed. The main technical characteristics of the design are presented. The design able to math readout constraints for a high luminosity collider experiment is discussed. 10 refs., 2 tabs., 8 figs.

  3. Dose determination on buildup region using photodiodes

    International Nuclear Information System (INIS)

    Khoury, H.J.; Lopes, F.J.; Melo, F. de A.

    1989-01-01

    A clinical dosemeter using photodiode BPW-34 was developed, allowing the determination of dose on buildup region. The measures were made with X-rays beam of linear accelerator and with gamma radiation of cobalt 60. The results were compared with others made in a ionization chamber. (C.G.C.) [pt

  4. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  5. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    International Nuclear Information System (INIS)

    Paul, S. F.; Marsala, R.

    2006-01-01

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

  6. Low voltage aluminium anodes. Optimization of the insert-anode bond

    Energy Technology Data Exchange (ETDEWEB)

    Le Guyader, Herve; Debout, Valerie; Grolleau, Anne-Marie [DCN Cherbourg, Departement 2EI, Place Bruat, BP 440, 50104 Cherbourg-Octeville (France); Pautasso, Jean-Pierre [DGA/CTA 16 bis, avenue Prieur de la Cote D' Or, 94 114 Arcueil Cedex (France)

    2004-07-01

    Zinc or Al/Zn/In sacrificial anodes are widely used to protect submerged marine structures from corrosion. Their Open Circuit Potential range from - 1 V vs. Ag/AgCl for Zn anodes to -1.1 V vs. Ag/AgCl for Al/Zn/In. These potentials are sufficiently electronegative as to reduce the threshold for stress corrosion cracking and/or hydrogen embrittlement, KISCC, especially in the presence of high strength alloys. In the 90's, an extensive research programme was initiated by DGA/DCN to implement a new low voltage material. Laboratory and full scale marine tests performed on industrial castings, as previously reported, led to the development of a new patented Al- 0.1%Ga alloy having a working potential of - 0.80 to - 0.83 V vs. Ag/AgCl. This alloy was also evaluated at full scale at the Naval Research Laboratory anode qualification site in Key West, Fl, and gave satisfactory results. Around 500 cylindrical AlGa anodes were then installed on a submerged marine structure replacing the classical zinc anode. A first inspection, carried out after a few months of service, showed that some of the anodes had not operated as expected, which led to further investigations. The examinations performed indicated that the problem was due to a bad metallurgical compatibility between the insert and the sacrificial materials inducing a poor bond between the anode and the plain rod insert. Progressive loss of contact between the anode and the structure to be protected was then induced by penetration of sea water and corrosion at the anode-insert interface. This phenomenon was aggravated by seawater pressure. Additional studies were therefore launched with two aims: (1) find temporary remedies for the anodes already installed on the structure; (2) correct the anode original design and/or manufacturing process to achieve the maximum performance on new anodes lots. This paper describes the various solutions investigated to improve the insert-anode bond: design of the anode, rugosity and

  7. Utilization of low voltage D-T neutron generators in neutron physics studies

    International Nuclear Information System (INIS)

    Singkarat, S.

    1995-01-01

    In a small nuclear laboratory of a developing country a low voltage D-T neutron generator can be a very useful scientific apparatus. Such machines have been used successfully for more than 40 years in teaching and scientific research. The original continuous mode 150-kV D-T neutron generator has been modified to have also a capability of producing 2-ns pulsed neutrons. Together with a carefully designed 10 m long flight path collimator and shielding of a 25 cm diameter · 10 cm thick BC-501 neutron detector, the pulsing system was successfully used for measuring the double differential cross-section (DDX) of natural iron for 14.1-MeV neutron from the angle of 30 deg to 150 deg in 10 deg steps. In order to extend the utility of the generator, two methods for converting the almost monoenergetic 14-MeV neutrons to monoenergetic neutrons of lower energy were proposed and tested. Both designs used the neutron-proton interaction at a circular surface-of-revolution made of hydrocarbon materials. The first design is for a pulsed neutron generator and the second design is for an ordinary continuous mode generator. The latter method was successfully used to measure the scintillation light output of a 1.4 cm diameter spherical NE-213 scintillation detector. The neutron generator has also been used in the continuous search for improved neutron detection techniques. There is a proposal, based on Monte Carlo calculations, of using a scintillation fiber for a fast neutron spectrometer. Due to the slender shape of the fiber, the pattern of produced light gives a peak in the pulse height spectrum instead of the well-known rectangular-like distribution, when the fiber is bombarded end-on by a beam of 14-MeV neutrons. Experimental investigations were undertaken. Detailed investigations on the light transportation property of a short fiber were performed. The predicted peak has not yet been found but the fiber detector may be developed as a directional discrimination fast neutron

  8. Solution-processable electrochemiluminescent ion gels for flexible, low-voltage, emissive displays on plastic.

    Science.gov (United States)

    Moon, Hong Chul; Lodge, Timothy P; Frisbie, C Daniel

    2014-03-05

    Ion gels comprising ABA triblock copolymers and ionic liquids have received much attention as functional materials in numerous applications, especially as gate dielectrics in organic transistors. Here we have expanded the functionality of ion gels by demonstrating low-voltage, flexible electrochemiluminescent (ECL) devices using patterned ion gels containing redox-active luminophores. The ECL devices consisted only of a 30 μm thick emissive gel and two electrodes and were fabricated on indium tin oxide-coated substrates (e.g., polyester) simply by solution-casting the ECL gel and brush-painting a top Ag electrode. The triblock copolymer employed in the gel was polystyrene-block-poly(methyl methacrylate)-block-polystyrene, where the solvophobic polystyrene end blocks associate into micellar cross-links in the versatile ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]). An ECL gel containing ~6.25 wt % Ru(bpy)3Cl2 (relative to [EMI][TFSI]) as the luminophore turned on at an AC peak-to-peak voltage as low as 2.6 V (i.e., -1.3 to +1.3 V) and showed a relatively rapid response (sub-ms). The wavelength of maximum emission was 610 nm (red-orange). With the use of an iridium(III) complex, Ir(diFppy)2(bpy)PF6 [diFppy = 2-(2',4'-difluorophenyl)pyridine; bpy = 2,2'-bipyridyl], the emitting color was tuned to a maximum wavelength of 540 nm (green). Moreover, when a blended luminophore system containing a 60:40 mixture of Ru(bpy)3(2+) and Ir(diFppy)2(bpy)(+) was used in the emissive layer, the luminance of red-orange-colored light was enhanced by a factor of 2, which is explained by the generation of the additional excited state Ru(bpy)3(2+)* by a coreactant pathway with Ir(diFppy)2(bpy)(+)* in addition to the usual annihilation pathway. This is the first time that enhanced ECL has been achieved in ion gels (or ionic liquids) using a coreactant. Overall, the results indicate that ECL ion gels are attractive multifunctional materials for

  9. Prevalence and predictors of low voltage zones in the left atrium in patients with atrial fibrillation.

    Science.gov (United States)

    Huo, Yan; Gaspar, Thomas; Pohl, Matthias; Sitzy, Judith; Richter, Utz; Neudeck, Sebastian; Mayer, Julia; Kronborg, Mads Brix; Piorkowski, Christopher

    2017-06-10

    To describe the extent and distribution of low voltage zones (LVZ) in a large cohort of patients undergoing ablation for paroxysmal and persistent atrial fibrillation (AF), and to explore baseline predictors of LVZ in these patients. Consecutive patients who underwent a bipolar voltage map guided AF ablation, were enrolled. Voltage maps were conducted for each patient using 3-dimensional electroanatomical mapping system and LVZ were defined as areas of bipolar voltage voltage zones was present in 58 out of 292 patients with paroxysmal and 134 out of 247 persistent AF (P < 0.001). The area of LVZ was larger in patients with persistent as compare to paroxysmal AF, 5 cm2 (IQR 3-18.6) vs. 12.1 cm2 (IQR 3.6-28.5), P = 0.026, respectively. In the multivariate analysis age (OR 1.07, 95%CI 1.05-1.10, P < 0.001), female gender (OR 2.18, 95%CI 1.38-3.43, P = 0.001), sinoatrial node dysfunction (OR 3.90, 95%CI 1.24-12.21, P = 0.020), larger surface area of left atrium pr. cm2 (OR 1.01, 95%CI 1.00-1.02, P = 0.016), and persistent AF (OR 5.03, 95%CI 3.20-7.90, P<0.001) were associated with presence of LVZ. In a large cohort of patients undergoing ablation for AF, the prevalence of LVZ was higher and LVZ areas larger in patients with persistent as compared with paroxysmal AF. The most frequent localization of LVZ was anterior wall, septum and posterior wall. Presence of LVZ was associated with higher age, female gender, larger LA surface area, and sinoatrial node dysfunction. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2017. For permissions, please email: journals.permissions@oup.com.

  10. Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

    Science.gov (United States)

    Ripamonti, Giancarlo; Lacaita, Andrea L.

    1993-03-01

    The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

  11. Low-voltage, large-strain soft electrothermal actuators based on laser-reduced graphene oxide/Ag particle composites

    Science.gov (United States)

    Wang, Qian; Li, Yu-Tao; Zhang, Tian-Yu; Wang, Dan-Yang; Tian, Ye; Yan, Jun-Chao; Tian, He; Yang, Yi; Yang, Fan; Ren, Tian-Ling

    2018-03-01

    In this paper, low-voltage, large-strain flexible electrothermal actuators (ETAs) based on laser-reduced graphene oxide (LRGO)/Ag particle composites were fabricated in a simple and cost-efficient process. By adding Ag particles to the LRGO, the sheet resistance decreased effectively. Under a driving voltage of 28 V, the actuator obtained a bending angle of 192° within 6 s. Besides, the bending deformation could be precisely controlled by the driving voltage ranging from 10° to 192°. Finally, a gripper composed of two actuators was demonstrated to manipulate a piece of polydimethylsiloxane block. With the advantages of low-voltage, fast-response, and easy-to-manufacture, the graphene based ETAs have a promising application in soft robotics and soft machines.

  12. Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

  13. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  14. Proposal for the award of a contract, without competitive tendering, for the maintenance of low-voltage switchgear

    CERN Document Server

    2003-01-01

    This document concerns the award of a contract, without competitive tendering, for the maintenance of low-voltage switchgear. The Finance Committee is invited to agree to the negotiation of a contract, without competitive tendering, for the maintenance of low-voltage switchgear with HAZEMEYER (FR) for a total amount of 385 000 euros (610 000 Swiss francs), covering an initial period of five years, subject to revision for inflation after 1 January 2007. The contract will include options for two one-year extensions beyond the initial five-year period. The amount in Swiss francs has been calculated using the present rate of exchange. The firm has indicated the following distribution by country of the contract value covered by this adjudication proposal: FR - 100%.

  15. Catastrophic avalanches and methods of their control

    Directory of Open Access Journals (Sweden)

    N. A. Volodicheva

    2014-01-01

    Full Text Available Definition of such phenomenon as “catastrophic avalanche” is presented in this arti-cle. Several situations with releases of catastrophic avalanches in mountains of Caucasus, Alps, and Central Asia are investigated. Materials of snow-avalanche ob-servations performed since 1960s at the Elbrus station of the Lomonosov Moscow State University (Central Caucasus were used for this work. Complex-valued measures of engineering protection demonstrating different efficiencies are consid-ered.

  16. Statistics of Electron Avalanches and Streamers

    Directory of Open Access Journals (Sweden)

    T. Ficker

    2007-01-01

    Full Text Available We have studied the severe systematic deviations of populations of electron avalanches from the Furry distribution, which has been held to be the statistical law corresponding to them, and a possible explanation has been sought. A  new theoretical concept based on fractal avalanche multiplication has been proposed and is shown to be a convenient candidate for explaining these deviations from Furry statistics. 

  17. Development of a prototype solid state fault current limiting and interrupting device for low voltage distribution networks.

    OpenAIRE

    Ahmed, M.; Putrus, G. A.; Ran, L.; Penlington, R.

    2006-01-01

    This paper describes the development of a solid-state Fault Current Limiting and Interrupting Device (FCLID) suitable for low voltage distribution networks. The main components of the FCLID are a bidirectional semiconductor switch that can disrupt the short-circuit current, and a voltage clamping element that helps in controlling the current and absorbing the inductive energy stored in the network during current interruption. Using a hysteresis type control algorithm, the short-circuit curren...

  18. Urban exposure to ELF magnetic field due to high-, medium- and low-voltage electricity supply networks

    International Nuclear Information System (INIS)

    Bottura, V.; Cappio Borlino, M.; Carta, N.; Cerise, L.; Imperial, E.

    2009-01-01

    The regional environment protection agency (ARPA) of the Aosta Valley region in north Italy performed a survey of magnetic field triggered by the power supply network in high, medium and low voltages on the entire area of Aosta town. The electrical distribution system for houses was not however taken into account. The aim of the survey was to evaluate the global population exposure and not simply the assessment of the legal exposure limit compliance. (authors)

  19. Interpolation by a prime factor other than 2 in low-voltage low-power ΣΔ DAC

    DEFF Research Database (Denmark)

    Pracný, Peter; Jørgensen, Ivan Harald Holger; Chen, Liang

    2013-01-01

    This paper presents power optimization of a sigma-delta (ΣΔ) modulator based digital-to-analog converter (DAC) for hearing-aid audio back-end application. In a number of state-of-the-art publications the oversampling ratio (OSR) of the ΣΔ modulator is chosen as a factor of integer power of two...... optimization approach can be used for other low voltage low power portable audio applications (mobile phones, notebook computers etc.)....

  20. A High Resolution Switched Capacitor 1bit Sigma-Delta Modulator for Low-Voltage/Low-Power Applications

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    1996-01-01

    A high resolution 1bit Sigma-Delta modulator for low power/low voltage applications is presented. The modulator operates at a supply of 1-1.5V, the current drain is 0.1mA. The maximum resolution is 87dB equivalent to 14 bits of resolution. This is achieved with a signal-band of 5kHz, over-samplin...

  1. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  2. Effect of Copper and Silicon on Al-5%Zn Alloy as a Candidate Low Voltage Sacrificial Anode

    Science.gov (United States)

    Pratesa, Yudha; Ferdian, Deni; Togina, Inez

    2017-05-01

    One common method used for corrosion protection is a sacrificial anode. Sacrificial anodes that usually employed in the marine environment are an aluminum alloy sacrificial anode, especially Al-Zn-In. However, the electronegativity of these alloys can cause corrosion overprotection and stress cracking (SCC) on a high-strength steel. Therefore, there is a development of the sacrificial anode aluminum low voltage to reduce the risk of overprotection. The addition of alloying elements such as Cu, Si, and Ge will minimize the possibility of overprotection. This study was conducted to analyze the effect of silicon and copper addition in Al-5Zn. The experiment started from casting the sacrificial anode aluminum uses electrical resistance furnace in a graphite crucible in 800°C. The results alloy was analyzed using Optical emission spectroscopy (OES), Differential scanning calorimetry, electrochemical impedance spectroscopy, and metallography. Aluminum alloy with the addition of a copper alloy is the most suitable and efficient to serve as a low-voltage sacrificial anode aluminum. Charge transfer resistivity of copper is smaller than silicon which indicates that the charge transfer between the metal and the electrolyte is easier t to occur. Also, the current potential values in coupling with steel are also in the criteria range of low-voltage aluminum sacrificial anodes.

  3. High-Efficiency Isolated Boost DCDC Converter for High-Power Low-Voltage Fuel-Cell Applications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2010-01-01

    high winding losses. The analysis of transformer leakage inductance reveals that extremely low leakage inductance can be achieved, allowing stored energy to be dissipated. Power MOSFETs fully rated for repetitive avalanches allow primary-side voltage clamp circuits to be eliminated. The oversizing...

  4. Panoramic irradiator dose mapping with pin photodiodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

    2011-01-01

    In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

  5. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  6. A radiation detector fabricated from silicon photodiode.

    Science.gov (United States)

    Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

    1984-12-01

    A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

  7. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  8. A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

    Science.gov (United States)

    Kim, Tony Tae-Hyoung; Lee, Zhao Chuan; Do, Anh Tuan

    2018-01-01

    Ultra-low voltage SRAMs are highly sought-after in energy-limited systems such as battery-powered and self-harvested SoCs. However, ultra-low voltage operation diminishes SRAM read bitline (RBL) sensing margin significantly. This paper tackles this issue by presenting a novel 9T cell with data-independent RBL leakage in combination with an RBL boosting technique for enhancing the sensing margin. The proposed technique automatically tracks process, temperature and voltage (PVT) variations for robust sensing margin enhancement. A test chip fabricated in 65 nm CMOS technology shows that the proposed scheme significantly enlarges the sensing margin compared to the conventional bitline sensing scheme. It also achieves the minimum operating voltage of 0.18 V and the minimum energy consumption of 0.92 J/access at 0.4 V. He received 2016 International Low Power Design Contest Award from ISLPED, a best paper award at 2014 and 2011 ISOCC, 2008 AMD/CICC Student Scholarship Award, 2008 Departmental Research Fellowship from Univ. of Minnesota, 2008 DAC/ISSCC Student Design Contest Award, 2008, 2001, and 1999 Samsung Humantec Thesis Award and, 2005 ETRI Journal Paper of the Year Award. He is an author/co-author of +100 journal and conference papers and has 17 US and Korean patents registered. His current research interests include low power and high performance digital, mixed- mode, and memory circuit design, ultra-low voltage circuits and systems design, variation and aging tolerant circuits and systems, and circuit techniques for 3D ICs. He serves as an associate editor of IEEE Transactions on VLSI Systems. He is an IEEE senior member and the Chair of IEEE Solid-State Circuits Society Singapore Chapter. He has served numerous conferences as a committee member.

  9. Five-Phase Five-Level Open-Winding/Star-Winding Inverter Drive for Low-Voltage/High-Current Applications

    DEFF Research Database (Denmark)

    Padmanaban, Sanjeevi Kumar; Blaabjerg, Frede; Wheeler, Patrick

    2016-01-01

    This paper work proposed a five-phase five-level open-/star-winding multilevel AC converter suitable for low-voltage/high-current applications. Modular converter consists of classical two-level five-phase voltage source inverter (VSI) with slight reconfiguration to serve as a multilevel converter...... for open-/star-winding loads. Elaborately, per phase of the VSI is built with one additional bi-directional switch (MOSFET/IGBT) and all five legs links to the neutral through two capacitors. The structure allows multilevel generation to five-level output with greater potential for fault tolerability under...

  10. Design of Low Voltage Low Power CMOS OP-AMPS with Rail-to-Rail Input/Output Swing

    OpenAIRE

    Gopalaiah, SV; Shivaprasad, AP; Panigrahi, Sukanta K

    2004-01-01

    A novel input and output biasing circuit to extend the input common mode (CM) voltage range and the output swing to rail-to-rail in a low voltage op-amp in standard CMOS technology is presented. The input biasing circuit uses a Switched Capacitor Based Attenuator (SCBA) approach to establish rail-to-rail common mode input voltage range. And the output biasing circuit uses an Output Driver (OD), with floating bias to give the rail-to-rail swing at output stage. Three different OD schemes in op...

  11. Analysis of Energy and Power Generation in a Photovoltaic Micro installation Interconnected with a Low Voltage Grid

    Directory of Open Access Journals (Sweden)

    Marian Sobierajski

    2015-12-01

    Full Text Available The paper discusses the performance of the 15 kW photovoltaic micro installation located on the roof of building D-1 of the Faculty of Electrical Engineering at Wroclaw University of Technology. The micro installation is connected to the low voltage grid, which supplies the new, air-conditioned building D-20. The paper discusses the energy and power generation output in yearly, monthly, and daily intervals. The micro installation’s output in the summer morning peaks is compared with the daily wind generation against the background of the demand, generation, regulation reserve, and overhauls in the National Power System.

  12. Surge currents and voltages at the low voltage power mains during lightning strike to a GSM tower

    Energy Technology Data Exchange (ETDEWEB)

    Markowska, Renata [Bialystok Technical University (Poland)], E-mail: remark@pb.edu.pl

    2007-07-01

    The paper presents the results of numerical calculations of lightning surge currents and voltages in the low voltage power mains system connected to a free standing GSM base station. Direct lightning strike to GSM tower was studied. The analysis concerned the current that flows to the transformer station through AC power mains, the potential difference between the grounding systems of the GSM and the transformer stations and the voltage differences between phase and PE conductors of the power mains underground cable at both the GSM and the transformer sides. The calculations were performed using a numerical program based on the electromagnetic field theory and the method of moments. (author)

  13. Distributed Low Voltage Ride-Through Operation of Power Converters in Grid-Connected Microgrids under Voltage Sags

    DEFF Research Database (Denmark)

    Zhao, Xin; Meng, Lexuan; Dragicevic, Tomislav

    2015-01-01

    it can make the MG a contributor in smooth ride through the faults. In this paper, a reactive power support strategy using droop controlled converters is proposed to aid MG riding through three phase symmetrical voltage sags. In such a case, the MGs should inject reactive power to the grid to boost...... the voltage in all phases at AC common bus. However, since the line admittances from each converter to point of common coupling (PCC) are not identical, the injected reactive power may not be equally shared. In order to achieve low voltage ride through (LVRT) capability along with a good power sharing...

  14. Relating rock avalanche morphology to emplacement processes

    Science.gov (United States)

    Dufresne, Anja; Prager, Christoph; Bösmeier, Annette

    2015-04-01

    The morphology, structure and sedimentological characteristics of rock avalanche deposits reflect both internal emplacement processes and external influences, such as runout path characteristics. The latter is mainly predisposed by topography, substrate types, and hydrogeological conditions. Additionally, the geological setting at the source slope controls, e.g. the spatial distribution of accumulated lithologies and hence material property-related changes in morphology, or the maximum clast size and amount of fines of different lithological units. The Holocene Tschirgant rock avalanche (Tyrol, Austria) resulted from failure of an intensely deformed carbonate rock mass on the southeast face of a 2,370-m-high mountain ridge. The initially sliding rock mass rapidly fragmented as it moved towards the floor of the Inn River valley. Part of the 200-250 x 106 m3 (Patzelt 2012) rock avalanche debris collided with and moved around an opposing bedrock ridge and flowed into the Ötz valley, reaching up to 6.3 km from source. Where the Tschirgant rock avalanche spread freely it formed longitudinal ridges aligned along motion direction as well as smaller hummocks. Encountering high topography, it left runup ridges, fallback patterns (i.e. secondary collapse), and compressional morphology (successively elevated, transverse ridges). Further evidence for the mechanical landslide behaviour is given by large volumes of mobilized valley-fill sediments (polymict gravels and sands). These sediments indicate both shearing and compressional faulting within the rock avalanche mass (forming their own morphological units through, e.g. in situ bulldozing or as distinctly different hummocky terrain), but also indicate extension of the spreading landslide mass (i.e. intercalated/injected gravels encountered mainly in morphological depressions between hummocks). Further influences on its morphology are given by the different lithological units. E.g. the transition from massive dolomite

  15. Criticality and avalanches in neural networks

    International Nuclear Information System (INIS)

    Zare, Marzieh; Grigolini, Paolo

    2013-01-01

    Highlights: • Temporal criticality is used as criticality indicator. • The Mittag–Leffler function is proposed as a proper form of temporal complexity. • The distribution of avalanche size becomes scale free in the supercritical state. • The scale-free distribution of avalanche sizes is an epileptic manifestation. -- Abstract: Experimental work, both in vitro and in vivo, reveals the occurrence of neural avalanches with an inverse power law distribution in size and time duration. These properties are interpreted as an evident manifestation of criticality, thereby suggesting that the brain is an operating near criticality complex system: an attractive theoretical perspective that according to Gerhard Werner may help to shed light on the origin of consciousness. However, a recent experimental observation shows no clear evidence for power-law scaling in awake and sleeping brain of mammals, casting doubts on the assumption that the brain works at criticality. This article rests on a model proposed by our group in earlier publications to generate neural avalanches with the time duration and size distribution matching the experimental results on neural networks. We now refine the analysis of the time distance between consecutive firing bursts and observe the deviation of the corresponding distribution from the Poisson statistics, as the system moves from the non-cooperative to the cooperative regime. In other words, we make the assumption that the genuine signature of criticality may emerge from temporal complexity rather than from the size and time duration of avalanches. We argue that the Mittag–Leffler (ML) exponential function is a satisfactory indicator of temporal complexity, namely of the occurrence of non-Poisson and renewal events. The assumption that the onset of criticality corresponds to the birth of renewal non-Poisson events establishes a neat distinction between the ML function and the power law avalanches generating regime. We find that

  16. Phase avalanches in near-adiabatic evolutions

    International Nuclear Information System (INIS)

    Vertesi, T.; Englman, R.

    2006-01-01

    In the course of slow, nearly adiabatic motion of a system, relative changes in the slowness can cause abrupt and high magnitude phase changes, ''phase avalanches,'' superimposed on the ordinary geometric phases. The generality of this effect is examined for arbitrary Hamiltonians and multicomponent (>2) wave packets and is found to be connected (through the Blaschke term in the theory of analytic signals) to amplitude zeros in the lower half of the complex time plane. Motion on a nonmaximal circle on the Poincare-sphere suppresses the effect. A spectroscopic transition experiment can independently verify the phase-avalanche magnitudes

  17. Beyond Critical Exponents in Neuronal Avalanches

    Science.gov (United States)

    Friedman, Nir; Butler, Tom; Deville, Robert; Beggs, John; Dahmen, Karin

    2011-03-01

    Neurons form a complex network in the brain, where they interact with one another by firing electrical signals. Neurons firing can trigger other neurons to fire, potentially causing avalanches of activity in the network. In many cases these avalanches have been found to be scale independent, similar to critical phenomena in diverse systems such as magnets and earthquakes. We discuss models for neuronal activity that allow for the extraction of testable, statistical predictions. We compare these models to experimental results, and go beyond critical exponents.

  18. Responses of the multi-photodiode readout

    International Nuclear Information System (INIS)

    Tamai, K.

    2000-01-01

    The responses for a signal in various configurations of photodiodes (PDs) and preamplifiers are analyzed by Laplace transformation. The electronic noise in the configuration is derived using the Fourier transformation. The responses and noise are obtained by an analogical extension of the impedance from a single-PD configuration to the multi-PD configuration; however, the noise is not so simple when connected in series. Using the results, we evaluate the energy resolution of the configurations. A series PD connection realizes a better resolution than a parallel connection in the fast shaping

  19. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  20. Real time avalanche detection for high risk areas.

    Science.gov (United States)

    2014-12-01

    Avalanches routinely occur on State Highway 21 (SH21) between Lowman and Stanley, Idaho each winter. The avalanches pose : a threat to the safety of maintenance workers and the traveling public. A real-time avalanche detection system will allow the :...

  1. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  2. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  3. Calculation of harmonic losses and ampacity in low-voltage power cables when used for feeding large LED lighting loads

    Directory of Open Access Journals (Sweden)

    N. J. Milardovich

    2014-10-01

    Full Text Available A numerical investigation on the harmonic disturbances in low-voltage cables feeding large LED loads is reported. A frequency domain analysis on several commercially-available LEDs was performed to investigate the signature of the harmonic current injected into the power system. Four-core cables and four single-core cable arrangements (three phases and neutral of small, medium, and large conductor cross sections, with the neutral conductor cross section approximately equal to the half of the phase conductors, were examined. The cables were modelled by using electromagnetic finite-element analysis software. High harmonic power losses (up to 2.5 times the value corresponding to an undistorted current of the same rms value of the first harmonic of the LED current were found. A generalized ampacity model was employed for re-rating the cables. It was found that the cross section of the neutral conductor plays an important role in the derating of the cable ampacity due to the presence of a high-level of triplen harmonics in the distorted current. The ampacity of the cables should be derated by about 40 %, almost independent of the conductor cross sections. The calculation have shown that an incoming widespread use of LED lamps in lighting could create significant additional harmonic losses in the supplying low-voltage lines, and thus more severely harmonic emission limits should be defined for LED lamps.

  4. Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

    Science.gov (United States)

    Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

    2003-04-01

    This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

  5. Characterization of conductive nanobiomaterials derived from viral assemblies by low-voltage STEM imaging and Raman scattering

    International Nuclear Information System (INIS)

    Plascencia-Villa, Germán; Bahena, Daniel; José-Yacamán, Miguel; Carreño-Fuentes, Liliana; Palomares, Laura A; Ramírez, Octavio T

    2014-01-01

    New technologies require the development of novel nanomaterials that need to be fully characterized to achieve their potential. High-resolution low-voltage scanning transmission electron microscopy (STEM) has proven to be a very powerful technique in nanotechnology, but its use for the characterization of nanobiomaterials has been limited. Rotavirus VP6 self-assembles into nanotubular assemblies that possess an intrinsic affinity for Au ions. This property was exploited to produce hybrid nanobiomaterials by the in situ functionalization of recombinant VP6 nanotubes with gold nanoparticles. In this work, Raman spectroscopy and advanced analytical electron microscopy imaging with spherical aberration-corrected (Cs) STEM and nanodiffraction at low-voltage doses were employed to characterize nanobiomaterials. STEM imaging revealed the precise structure and arrangement of the protein templates, as well as the nanostructure and atomic arrangement of gold nanoparticles with high spatial sub-Angstrom resolution and avoided radiation damage. The imaging was coupled with backscattered electron imaging, ultra-high resolution scanning electron microscopy and x-ray spectroscopy. The hybrid nanobiomaterials that were obtained showed unique properties as bioelectronic conductive devices and showed enhanced Raman scattering by their precise arrangement into superlattices, displaying the utility of viral assemblies as functional integrative self-assembled nanomaterials for novel applications. (paper)

  6. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, Erich H.; Hendrikx, Jordy; Fagre, Daniel B.

    2014-01-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  7. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, E.; Hendrikx, J.; Fagre, D. B.

    2013-12-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  8. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  9. Radon measurements with a PIN photodiode

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

  10. Oscillatory regime of avalanche particle detectors

    International Nuclear Information System (INIS)

    Lukin, K.A.; Cerdeira, H.A.; Colavita, A.A.

    1995-06-01

    We describe the model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. We show that this detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out. (author). 15 refs, 7 figs

  11. Avalanches in a Bose-Einstein condensate

    NARCIS (Netherlands)

    Schuster, J.; Marte, A.; Amtage, S.; Sang, B.; Rempe, G.; Beijerinck, H.C.W.

    2001-01-01

    Collisional avalanches are identified to be responsible for an 8-fold increase of the initial loss rate of a large 87Rb condensate. We show that the collisional opacity of an ultracold gas exhibits a critical value. When exceeded, losses due to inelastic collisions are substantially enhanced. Under

  12. Low-cost amplifier for alpha detection with photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Domienikan, Cláudio; Costa, Priscila; Genezini, Frederico A.; Zahn, Guilherme S., E-mail: clanikan@ipen.br, E-mail: pcosta@ipen.br, E-mail: fredzini@ipen.br, E-mail: gzahn@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A low-cost amplifier for Hamamatsu S3590-09 PIN photodiode to be used in alpha detection is presented. This amplifier consists basically of two circuits: a pulse preamplifier and a shaper-driver. The PIN photodiode is reverse-biased and connected to a charge preamplifier input. Incident alpha particles generate a small current pulse in the photodiode. The integrating circuit of the low noise preamplifier transforms current pulse into a voltage pulse with amplitude proportional to the charge carried by the current pulse. The shaper-driver consists of a differentiator and an integrator and is responsible for filtering and further amplifying the preamplifier signal, generating a NIM-compatible energy pulse. The performance of the set photodiode-amplifier was successively tested through the use of a {sup 243}Am radioactive source. The low-cost photodiode amplifier was designed and constructed at IPEN - CNEN/SP using national components and expertise. (author)

  13. An Ultra-Low Voltage Analog Front End for Strain Gauge Sensory System Application in 0.18µm CMOS

    Science.gov (United States)

    Edward, Alexander; Chan, Pak Kwong

    This paper presents analysis and design of a new ultra-low voltage analog front end (AFE) dedicated to strain sensor applications. The AFE, designed in 0.18µm CMOS process, features a chopper-stabilized instrumentation amplifier (IA), a balanced active MOSFET-C 2nd order low pass filter (LPF), a clock generator and a voltage booster which operate at supply voltage (Vdd) of 0.6V. The designed IA achieves 30dB of closed-loop gain, 101dB of common-mode rejection ratio (CMRR) at 50Hz, 80dB of power-supply rejection ratio (PSRR) at 50Hz, thermal noise floor of 53.4 nV/√Hz, current consumption of 14µA, and noise efficiency factor (NEF) of 9.7. The high CMRR and rail-to-rail output swing capability is attributed to a new low voltage realization of the active-bootstrapped technique using a pseudo-differential gain-boosting operational transconductance amplifier (OTA) and proposed current-driven bulk (CDB) biasing technique. An output capacitor-less low-dropout regulator (LDO), with a new fast start-up LPF technique, is used to regulate this 0.6V supply from a 0.8-1.0V energy harvesting power source. It achieves power supply rejection (PSR) of 42dB at frequency of 1MHz. A cascode compensated pseudo differential amplifier is used as the filter's building block for low power design. The filter's single-ended-to-balanced converter is implemented using a new low voltage amplifier with two-stage common-mode cancellation. The overall AFE was simulated to have 65.6dB of signal-to-noise ratio (SNR), total harmonic distortion (THD) of less than 0.9% for a 100Hz sinusoidal maximum input signal, bandwidth of 2kHz, and power consumption of 51.2µW. Spectre RF simulations were performed to validate the design using BSIM3V3 transistor models provided by GLOBALFOUNDRIES 0.18µm CMOS process.

  14. SWIR HgCdTe avalanche photiode focal plane array performances evaluation

    Science.gov (United States)

    de Borniol, E.; Rothman, J.; Salveti, F.; Feautrier, P.

    2017-11-01

    One of the main challenges of modern astronomical instruments like adaptive optics (AO) systems or fringe trackers is to deal with the very low photons flux detection scenarios. The typical timescale of atmospheric turbulences being in the range of some tens of milliseconds, infrared wavefront sensors for AO systems needs frame rates higher than 1 KHz leading to integration times lower than 1 ms. This integration time associated with a low irradiance results in a few number of integrated photons per frame per pixel. To preserve the information coming from this weak signal, the focal plane array (FPA) has to present a low read out noise, a high quantum efficiency and a low dark current. Up to now, the output noise of high speed near infrared sensors is limited by the silicon read out circuit noise. The use of HgCdTe avalanche photodiodes with high gain at moderate reverse bias and low excess noise seems then a logical way to reduce the impact of the read noise on images signal to noise ratio. These low irradiance passive imaging applications with integration times in the millisecond range needs low photodiode dark current and low background current. These requirements lead to the choice of the photodiode cut off wavelength. The short wave infrared (SWIR) around 3 μm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range. In this communication we report the performances of a SWIR APD FPA designed and fabricated by CEA LETI and SOFRADIR for astrophysical applications. This development was made in the frame of RAPID, a 4 years R&D project funded by the French FUI (Fond Unique Interministériel). This

  15. Electric Boiler and Heat Pump Thermo-Electrical Models for Demand Side Management Analysis in Low Voltage Grids

    DEFF Research Database (Denmark)

    Diaz de Cerio Mendaza, Iker; Bak-Jensen, Birgitte; Chen, Zhe

    2013-01-01

    The last fifteen years many European countries have integrated large percentage of renewable energy on their electricity generation mix. In Denmark the 21.3% of the electricity consumed nowadays is produced by the wind, and it has planned to be the 50% by 2025. In order to front future challenges...... on the power system control and operation, created by this unstable way of generation, Demand Side Management turns to be a promising solution. The storage capacity from thermo-electric units, like electric boilers and heat pumps, allows operating them with certain freedom. Hence they can be employed under...... certain coordination, to actively respond to the power system fluctuations. The following paper presents two simple thermo-electrical models of an electrical boiler and an air-source CO2 heat pump system. The purpose is using them in low voltage grids analysis to assess their capacity and flexibility...

  16. Investigation of phase-wise voltage regulator control logics for compensating voltage deviations in an experimental low voltage network

    DEFF Research Database (Denmark)

    Hu, Junjie; Zecchino, Antonio; Marinelli, Mattia

    2016-01-01

    This paper investigates the control logics of an on-load tap-changer (OLTC) transformer by means of an experimental system validation. The experimental low-voltage unbalanced system consists of a decoupled single-phase OLTC transformer, a 75-metre 16 mm2 cable, a controllable single-phase resistive...... load and an electric vehicle, which has the vehicle-to-grid function. Three control logics of the OLTC transformer are described in the study. The three control logics are classified based on their control objectives and control inputs, which include network currents and voltages, and can be measured...... either locally or remotely. To evaluate and compare the control performances of the three control logics, all the tests use the same loading profiles. The experimental results indicate that the modified line compensation control can regulate voltage in a safe band in the case of various load...

  17. Cooperative control of VSC-HVDC connected offshore wind farm with Low-Voltage Ride-Through capability

    DEFF Research Database (Denmark)

    Liu, Yan; Wang, Xiongfei; Chen, Zhe

    2012-01-01

    The Low-Voltage Ride-Through (LVRT) has become an important grid requirement for offshore wind farms connecting with Voltage Source Converter based High Voltage Direct Current (VSC-HVDC) links. In this paper, a cooperative control strategy with LVRT ability is proposed for a VSC-HVDC connected...... variable speed Squirrel-Cage Induction Generator (SCIG) wind farm. The approach employs a DC-link voltage versus offshore AC-bus frequency droop control on the offshore converter of VSC-HVDC link. Thus, the back-to-back converters of SCIG wind turbines can adjust the generated active power based on the AC......-bus frequency deviations, so that a fast power reduction on the wind farm side can be achieved. The EMTDC/PSCAD simulations are performed on a 300 MW offshore variable speed SCIG wind farm. Simulation results confirm the effectiveness of the proposed control method....

  18. Power Flow Analysis for Low-Voltage AC and DC Microgrids Considering Droop Control and Virtual Impedance

    DEFF Research Database (Denmark)

    Li, Chendan; Chaudhary, Sanjay Kumar; Savaghebi, Mehdi

    2017-01-01

    In the low-voltage (LV) ac microgrids (MGs), with a relatively high R/X ratio, virtual impedance is usually adopted to improve the performance of droop control applied to distributed generators (DGs). At the same time, LV dc MG using virtual impedance as droop control is emerging without adequate...... power flow studies. In this paper, power flow analyses for both ac and dc MGs are formulated and implemented. The mathematical models for both types of MGs considering the concept of virtual impedance are used to be in conformity with the practical control of the DGs. As a result, calculation accuracy...... is improved for both ac and dc MG power flow analyses, comparing with previous methods without considering virtual impedance. Case studies are conducted to verify the proposed power flow analyses in terms of convergence and accuracy. Investigation of the impact to the system of internal control parameters...

  19. Design and implementation of channel estimation for low-voltage power line communication systems based on OFDM

    International Nuclear Information System (INIS)

    Zhao Huidong; Hei Yong; Qiao Shushan; Ye Tianchun

    2012-01-01

    An optimized channel estimation algorithm based on a time-spread structure in OFDM low-voltage power line communication (PLC) systems is proposed to achieve a lower bit error rate (BER). This paper optimizes the best maximum multi-path delay of the linear minimum mean square error (LMMSE) algorithm in time-domain spread OFDM systems. Simulation results indicate that the BER of the improved method is lower than that of conventional LMMSE algorithm, especially when the signal-to-noise ratio (SNR) is lower than 0 dB. Both the LMMSE algorithm and the proposed algorithm are implemented and fabricated in CSMC 0.18 μm technology. This paper analyzes and compares the hardware complexity and performance of the two algorithms. Measurements indicate that the proposed channel estimator has better performance than the conventional estimator.

  20. Interpolating by a factor of 3 in low-voltage low-power ∑Δ DAC

    DEFF Research Database (Denmark)

    Pracný, Peter; Jørgensen, Ivan Harald Holger; Bruun, Erik

    2014-01-01

    This paper presents the power optimization of a sigma-delta (RD) modulator based digital-to-analog converter (DAC) for hearing aid audio back-end application. In a number of state-of-the-art publications the oversampling ratio (OSR) of the RD modulator is chosen as a factor of integer power of two...... by a factor of 3 are investigated. This new design freedom is used to lower the operating frequency of the whole back-end and save considerable amount of power. It is shown that the figure of- merit of such designs can be lower than designs using oversampling by a factor of integer powers of two. The same...... optimization approach can be used for other low voltage low power portable audio applications (mobile phones, notebook computers etc.)....

  1. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  2. Automatic Power-Sharing Modification of P/V Droop Controllers in Low-Voltage Resistive Microgrids

    DEFF Research Database (Denmark)

    L. Vandoorn, Tine; D. M. De Kooning, Jeroen; Meersman, Bart

    2012-01-01

    Microgrids are receiving an increasing interest to integrate the growing share of distributed-generation (DG) units in the electrical network. For the islanded operation of themicrogrid, several control strategies for the primary control have been developed to ensure stable microgrid operation....... In low-voltage (LV) microgrids, active power/voltage ( P/V ) droop controllers are gaining attention as they take the resistive nature of the network lines and the lack of directly coupled rotating inertia into account. However, a problem often cited with these droop controllers is that the grid voltage...... is not a global parameter. This can influence the power sharing between different units. In this paper, it is investigated whether this is actually a disadvantage of the control strategy. It is shown that with / droop control, the DG units that are located electrically far from the load centers automatically...

  3. Design and experimental investigation of a low-voltage thermoelectric energy harvesting system for wireless sensor nodes

    International Nuclear Information System (INIS)

    Guan, Mingjie; Wang, Kunpeng; Xu, Dazheng; Liao, Wei-Hsin

    2017-01-01

    Highlights: • A thermoelectric energy harvesting system for wireless sensor nodes is designed. • An ultra-low voltage self-startup is implemented. • Maximum power point tracking and low power designs are applied for high efficiency. • Efficiency of 44.2–75.4% is obtained with open-circuit voltage of 84–400 mV. • System efficiency is higher than the commercial BQ25504 converter. - Abstract: A thermoelectric energy harvesting system designed to harvest tens of microwatts to several milliwatts from low-voltage thermoelectric generators is presented in this paper. The proposed system is based-on a two-stage boost scheme with self-startup ability. A maximum power point tracking technique based on the open-circuit voltage is adopted in the boost converter for high efficiency. Experimental results indicate that the proposed system can harvest thermoelectric energy and run a microcontroller unit and a wireless sensor node under low input voltage and power with high efficiency. The harvest system and wireless sensor node can be self-powered with minimum thermoelectric open-circuit voltage as 62 mV and input power of 84 μW. With a self-startup scheme, the proposed system can self-start with a 20 mV input voltage. Low power designs are applied in the system to reduce the quiescent dissipation power. It results in better performance considering the conversion efficiency and self-startup ability compared to commercial boost systems used for thermal energy harvesting.

  4. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  5. Fast neutron damage of silicon pin photodiodes

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.; Skoczen, A.

    1990-01-01

    A Hamamatsu Photonics photodiode S1723 was tested with respect to the fast neutron radiation. The device was irradiated with neutrons of energies in the range of 0.5 MeV to 12 MeV from a Po-Be source. The irradiation was performed in several steps starting from the relatively low fluence of 2.5 x 10 10 n x cm -2 . The following characteristics were measured: leakage current vs bias voltage, capacitance vs bias voltage and vs frequency, noise vs time constant of a quasigaussian shaper and spectral density of noise. Significant changes of the leakage current and of the noise were observed at the fluence of neutrons as low as 2.5 x 10 10 n x cm -2 . 8 figs., 3 tabs., 15 refs. (author)

  6. Alpha particles spectrometer with photodiode PIN

    International Nuclear Information System (INIS)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R.; Ramirez G, J.

    2009-10-01

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  7. Avalanches in Mn12-Acetate: ``Magnetic Burning"

    Science.gov (United States)

    McHugh, Sean; Suzuki, Y.; Graybill, D.; Sarachik, M. P.; Avraham, N.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Chakov, N. E.; Christou, G.

    2006-03-01

    From local time-resolved measurements of fast reversal of the magnetization in single crystals of the molecular magnet Mn12-acetate, we have shown[1] that the magnetization avalanche spreads as a narrow interface that propagates through the crystal at a constant velocity roughly two orders of magnitude smaller than the speed of sound. This phenomenon is closely analogous to the propagation of a flame front (deflagration) through a flammable chemical substance. The propagation speed of the avalanche depends on the energy stored in each molecule, which can be controlled and tuned using an external magnetic field. We report studies of propagation speed with different external fields in Mn12-acetate. [1] Yoko Suzuki, M.P. Sarachik, E.M. Chudnovsky, S. McHugh, R. Gonzalez-Rubio, N. Avraham, Y. Myasoedov, H. Shtrikman, E. Zeldov, N.E. Chakov and G. Christou, Phys. Rev. Lett. 95, 147201 (2005).

  8. Avalanches in functional materials and geophysics

    CERN Document Server

    Saxena, Avadh; Planes, Antoni

    2017-01-01

    This book provides the state-of-the art of the present understanding of avalanche phenomena in both functional materials and geophysics. The main emphasis of the book is analyzing these apparently different problems within the common perspective of out-of-equilibrium phenomena displaying spatial and temporal complexity that occur in a broad range of scales. Many systems, when subjected to an external force, respond intermittently in the form of avalanches that often span over a wide range of sizes, energies and durations. This is often related to a class of critical behavior characterized by the absence of characteristic scales. Typical examples are magnetization processes, plastic deformation and failure occuring in functional materials. These phenomena share many similarities with seismicity arising from the earth crust failure due to stresses that originate from plate tectonics.

  9. A position sensitive parallel plate avalanche counter

    International Nuclear Information System (INIS)

    Lombardi, M.; Tan Jilian; Potenza, R.; D'amico, V.

    1986-01-01

    A position sensitive parallel plate avalanche counter with a distributed constant delay-line-cathode (PSAC) is described. The strips formed on the printed board were served as the cathode and the delay line for readout of signals. The detector (PSAC) was operated in isobutane gas at the pressure range from 10 to 20 torr. The position resolution is better than 1 mm and the time resolution is about 350 ps, for 252 Cf fission-spectrum source

  10. Nanomechanics of slip avalanches in amorphous plasticity

    Science.gov (United States)

    Cao, Penghui; Dahmen, Karin A.; Kushima, Akihiro; Wright, Wendelin J.; Park, Harold S.; Short, Michael P.; Yip, Sidney

    2018-05-01

    Discrete stress relaxations (slip avalanches) in a model metallic glass under uniaxial compression are studied using a metadynamics algorithm for molecular simulation at experimental strain rates. The onset of yielding is observed at the first major stress drop, accompanied, upon analysis, by the formation of a single localized shear band region spanning the entire system. During the elastic response prior to yielding, low concentrations of shear transformation deformation events appear intermittently and spatially uncorrelated. During serrated flow following yielding, small stress drops occur interspersed between large drops. The simulation results point to a threshold value of stress dissipation as a characteristic feature separating major and minor avalanches consistent with mean-field modeling analysis and mechanical testing experiments. We further interpret this behavior to be a consequence of a nonlinear interplay of two prevailing mechanisms of amorphous plasticity, thermally activated atomic diffusion and stress-induced shear transformations, originally proposed by Spaepen and Argon, respectively. Probing the atomistic processes at widely separate strain rates gives insight to different modes of shear band formation: percolation of shear transformations versus crack-like propagation. Additionally a focus on crossover avalanche size has implications for nanomechanical modeling of spatially and temporally heterogeneous dynamics.

  11. Study of multi-pixel Geiger-mode avalanche photodiodes as a read-out for PET

    CERN Document Server

    Musienko, Yuri; Lecoq, Paul; Reucroft, Stephen; Swain, John; Trummer, Julia

    2007-01-01

    We have studied the performance of two multi-pixel Geiger-mode APDs (recently developed by the Centre of Perspective Technologies and Apparatus (CPTA) in Moscow) with 1×1 mm2 and 3×3 mm2 sensitive area as a readout for LSO and LYSO scintillator crystals. Energy and timing spectra were measured using a 22Na γ-source. The results of this study allow us to conclude that this photodetector is a very promising candidate for PET applications.

  12. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  13. Configurable Electronics with Low Noise and 14-bit Dynamic Range for Photodiode-based Photon Detectors

    CERN Document Server

    Müller, H; Yin, Z; Zhou, D; Cao, X; Li, Q; Liu, Y; Zou, F; Skaali, B; Awes, T C

    2006-01-01

    We describe the principles and measured performance characteristics of custom configurable 32-channel shaper/digitizer Front End Electronics (FEE) cards with 14-bit dynamic range for use with gain-adjustable photon detectors. The electronics has been designed for the PHOS calorimeter of ALICE with avalanche photodiode (APD) readout operated at -25 C ambient temperature and a signal shaping time of $1 {\\mu}s$. The electronics has also been adopted by the EMCal detector of ALICE with the same APD readout, but operated at an ambient temperature of +20 C and with a shaping time of 100ns. The CR-RC2 signal shapers on the FEE cards are implemented in discrete logic on a 10-layer board with two shaper sections for each input channel. The two shaper sections with gain ratio of 16:1 are digitized by 10-bit ADCs and provide an effective dynamic range of 14 bits. Gain adjustment for each individual APD is available through 32 bias voltage control registers of 10-bit range. The fixed gains and shaping times of the pole-z...

  14. New silicon photodiodes for detection of the 1064nm wavelength radiation

    Science.gov (United States)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  15. New advances for modelling the debris avalanches

    Science.gov (United States)

    Cuomo, Sabatino; Cascini, Leonardo; Pastor, Manuel; Castorino, Giuseppe Claudio

    2013-04-01

    Flow-like landslides are a major global hazard and they occur worldwide causing a large number of casualties, significant structural damages to property and infrastructures as well as economic losses. When involving open slopes, these landslides often occur in triangular source areas where initial slides turn into avalanches through further failures and/or eventual soil entrainment. This paper deals with the numerical modelling of the propagation stage of debris avalanches which provides information such as the propagation pattern of the mobilized material, its velocity, thickness and run-out distance. In the paper, a "depth integrated" model is used which allows: i) adequately taking into account the irregular topography of real slopes which greatly affect the propagation stage and ii) using a less time consuming model than fully 3D approaches. The used model is named "GeoFlow_SPH" and it was formerly applied to theoretical, experimental and real case histories (Pastor et al., 2009; Cascini et al., 2012). In this work the behavior of debris avalanches is analyzed with special emphasis on the apical angle, one of the main features of this type of landslide, in relation to soil rheology, hillslope geometry and features of triggering area. Furthermore, the role of erosion has been investigated with reference to the uppermost parts of open slopes with a different steepness. These analyses are firstly carried out for simplified benchmark slopes, using both water-like materials (with no shear strength) and debris type materials. Then, three important case studies of Campania region (Cervinara, Nocera Inferiore e Sarno) are analyzed where debris avalanches involved pyroclastic soils originated from the eruptive products of Vesusius volcano. The results achieved for both benchmark slopes and real case histories outline the key role played by the erosion on the whole propagation stage of debris avalanches. The results are particularly satisfactory since they indicate the

  16. Anthropogenic effect on avalanche and debris flow activity

    OpenAIRE

    S. A. Sokratov; Yu. G. Seliverstov; A. L. Shnyparkov; K. P. Koltermann

    2013-01-01

    The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoida...

  17. Avalanche and streamer mode operation of resistive plate chambers

    International Nuclear Information System (INIS)

    Cardarelli, R.; Makeev, V.; Santonico, R.

    1996-01-01

    A resistive plate chamber was operated at voltages increasing in steps of 200 V over a 3 kV interval and the transition between the avalanche and streamer modes was studied. The avalanche amplitude was observed to be exponentially dependent on the operating voltage up to a value, characteristic of the gas, where the avalanche saturation occurs and delayed streamer signals start to appear. Signal waveforms, charge and timing distributions are reported. (orig.)

  18. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Institute of Scientific and Technical Information of China (English)

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  19. Line-to-Line Fault Analysis and Location in a VSC-Based Low-Voltage DC Distribution Network

    Directory of Open Access Journals (Sweden)

    Shi-Min Xue

    2018-03-01

    Full Text Available A DC cable short-circuit fault is the most severe fault type that occurs in DC distribution networks, having a negative impact on transmission equipment and the stability of system operation. When a short-circuit fault occurs in a DC distribution network based on a voltage source converter (VSC, an in-depth analysis and characterization of the fault is of great significance to establish relay protection, devise fault current limiters and realize fault location. However, research on short-circuit faults in VSC-based low-voltage DC (LVDC systems, which are greatly different from high-voltage DC (HVDC systems, is currently stagnant. The existing research in this area is not conclusive, with further study required to explain findings in HVDC systems that do not fit with simulated results or lack thorough theoretical analyses. In this paper, faults are divided into transient- and steady-state faults, and detailed formulas are provided. A more thorough and practical theoretical analysis with fewer errors can be used to develop protection schemes and short-circuit fault locations based on transient- and steady-state analytic formulas. Compared to the classical methods, the fault analyses in this paper provide more accurate computed results of fault current. Thus, the fault location method can rapidly evaluate the distance between the fault and converter. The analyses of error increase and an improved handshaking method coordinating with the proposed location method are presented.

  20. Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Q., E-mail: qwan2@sheffield.ac.uk [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Masters, R.C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Lidzey, D. [Department of Physics and Astronomy, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Abrams, K.J. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Dapor, M. [European Centre for Theoretical Studies in Nuclear Physics and Related Areas (ECT-FBK) and Trento Institute for Fundamental Physics and Applications (TIFPA-INFN), via Sommarive 18, I-38123 Trento (Italy); Plenderleith, R.A. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Rimmer, S. [Department of Chemistry, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Claeyssens, F.; Rodenburg, C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom)

    2016-12-15

    Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

  1. A Low-Power and Low-Voltage Power Management Strategy for On-Chip Micro Solar Cells

    Directory of Open Access Journals (Sweden)

    Ismail Cevik

    2015-01-01

    Full Text Available Fundamental characteristics of on-chip micro solar cell (MSC structures were investigated in this study. Several MSC structures using different layers in three different CMOS processes were designed and fabricated. Effects of PN junction structure and process technology on solar cell performance were measured. Parameters for low-power and low-voltage implementation of power management strategy and boost converter based circuits utilizing fractional voltage maximum power point tracking (FVMPPT algorithm were determined. The FVMPPT algorithm works based on the fraction between the maximum power point operation voltage and the open circuit voltage of the solar cell structure. This ratio is typically between 0.72 and 0.78 for commercially available poly crystalline silicon solar cells that produce several watts of power under typical daylight illumination. Measurements showed that the fractional voltage ratio is much higher and fairly constant between 0.82 and 0.85 for on-chip mono crystalline silicon micro solar cell structures that produce micro watts of power. Mono crystalline silicon solar cell structures were observed to result in better power fill factor (PFF that is higher than 74% indicating a higher energy harvesting efficiency.

  2. Analog Circuit Design Low Voltage Low Power; Short Range Wireless Front-Ends; Power Management and DC-DC

    CERN Document Server

    Roermund, Arthur; Baschirotto, Andrea

    2012-01-01

    The book contains the contribution of 18 tutorials of the 20th workshop on Advances in Analog Circuit Design.  Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art information is shared and overviewed. This book is number 20 in this successful series of Analog Circuit Design, providing valuable information and excellent overviews of Low-Voltage Low-Power Data Converters - Chaired by Prof. Anderea Baschirotto, University of Milan-Bicocca Short Range Wireless Front-Ends - Chaired by Prof. Arthur van Roermund, Eindhoven University of Technology Power management and DC-DC - Chaired by Prof. M. Steyaert, Katholieke University Leuven Analog Circuit Design is an essential reference source for analog circuit designers and researchers wishing to keep abreast with the latest development in the field. The tutorial coverage also makes it suitable for use in an advanced design.

  3. Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

    International Nuclear Information System (INIS)

    Wan, Q.; Masters, R.C.; Lidzey, D.; Abrams, K.J.; Dapor, M.; Plenderleith, R.A.; Rimmer, S.; Claeyssens, F.; Rodenburg, C.

    2016-01-01

    Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

  4. Proportional-Resonant Control of Doubly-Fed Induction Generator Wind Turbines for Low-Voltage Ride-Through Enhancement

    Directory of Open Access Journals (Sweden)

    Zhan-Feng Song

    2012-11-01

    Full Text Available A novel control strategy is proposed in this paper for the rotor side converter (RSC of doubly-fed induction generator (DFIG-based wind power generation systems. It is supposed to enhance the low-voltage ride-through (LVRT capability of DFIGs during great-level grid voltage dips. The strategy consists of a proportional-resonant (PR controller and auxiliary PR controllers. The auxiliary controllers compensate the output voltage of the RSC in case of grid faults, thus limiting the rotor inrush current of DFIG and meeting the requirements of LVRT. Sequential-component decompositions of current are not required in the control system to improve the response of system. Since the resonant compensator is a double-side integrator, the auxiliary controllers can be simplified through coordinate transformation. The feasibility of the control strategy is validated by simulation on a 1.5 MW wind-turbine driven DFIG system. The impact of the RSC converter voltage rating on the LVRT capability of DFIG is investigated. Meanwhile, the influence of angular frequency detection and control parameters are also discussed. Compared with traditional vector control schemes based on PI current controllers, the presented control strategy effectively suppress rotor current and reduce oscillations of DFIG power and torque under grid faults.

  5. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  6. A STATCOM with Supercapacitors for Low-Voltage Ride-Through in Fixed-Speed Wind Turbines

    Directory of Open Access Journals (Sweden)

    Andrés Felipe Obando-Montaño

    2014-09-01

    Full Text Available Fixed-speed wind generator (FSWG technology has an important presence in countries where wind energy started to be developed more than a decade ago. This type of technology cannot be directly adapted to the grid codes, for example those requirements related to the immunity level under voltage dips. That behavior is typically referred as low-voltage ride through (LVRT, and it usually implies certain reactive and active power injection requirements, both during a voltage dip and during the voltage recovery. In this context, a review is presented of the LVRT exigencies present in some of the countries with the most advanced grid codes (Denmark, Germany, Spain and the United Kingdom. In this paper, the capabilities of STATCOM-based devices for fulfilling the LVRT requirements in FSWGs are analyzed. For this purpose, two technologies are considered: a STATCOM with a supercapacitor, which improves its energy storage features; and a STATCOM with a supercapacitor and a DC-DC converter, to achieve higher discharge levels.

  7. Ultra-Low Voltage Sixth-Order Low Pass Filter for Sensing the T-Wave Signal in ECGs

    Directory of Open Access Journals (Sweden)

    Panagiotis Bertsias

    2014-11-01

    Full Text Available An ultra-low voltage sixth-order low pass filter topology, suitable for sensing the T-wave signal in an electrocardiogram (ECG, is presented in this paper. This is realized using a cascade connection of second-order building blocks constructed from a sinh-domain two-integrator loop. The performance of the filter has been evaluated using the Cadence Analog Design Environment and the design kit provided by the Austria Mikro Systeme (AMS 0.35-µm CMOS process. The power consumption of filters was 7.21 nW, while a total harmonic distortion (THD level of 4% was observed for an input signal of 220 pA. The RMS value of the input referred noise was 0.43 pA, and the simulated value of the dynamic range (DR was 51.1 dB. A comparison with already published counterparts shows that the proposed topology offers the benefits of 0.5-V supply voltage operation and significantly improved power efficiency.

  8. FDI based on Artificial Neural Network for Low-Voltage-Ride-Through in DFIG-based Wind Turbine.

    Science.gov (United States)

    Adouni, Amel; Chariag, Dhia; Diallo, Demba; Ben Hamed, Mouna; Sbita, Lassaâd

    2016-09-01

    As per modern electrical grid rules, Wind Turbine needs to operate continually even in presence severe grid faults as Low Voltage Ride Through (LVRT). Hence, a new LVRT Fault Detection and Identification (FDI) procedure has been developed to take the appropriate decision in order to develop the convenient control strategy. To obtain much better decision and enhanced FDI during grid fault, the proposed procedure is based on voltage indicators analysis using a new Artificial Neural Network architecture (ANN). In fact, two features are extracted (the amplitude and the angle phase). It is divided into two steps. The first is fault indicators generation and the second is indicators analysis for fault diagnosis. The first step is composed of six ANNs which are dedicated to describe the three phases of the grid (three amplitudes and three angle phases). Regarding to the second step, it is composed of a single ANN which analysis the indicators and generates a decision signal that describes the function mode (healthy or faulty). On other hand, the decision signal identifies the fault type. It allows distinguishing between the four faulty types. The diagnosis procedure is tested in simulation and experimental prototype. The obtained results confirm and approve its efficiency, rapidity, robustness and immunity to the noise and unknown inputs. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

  9. Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

    Energy Technology Data Exchange (ETDEWEB)

    Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

    2015-12-21

    Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

  10. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  11. Efficiency of high- and low-voltage pulse combinations for gene electrotransfer in muscle, liver, tumor, and skin

    DEFF Research Database (Denmark)

    André, F M; Gehl, J; Sersa, G

    2008-01-01

    Gene electrotransfer is gaining momentum as an efficient methodology for nonviral gene transfer. In skeletal muscle, data suggest that electric pulses play two roles: structurally permeabilizing the muscle fibers and electrophoretically supporting the migration of DNA toward or across the permeab......Gene electrotransfer is gaining momentum as an efficient methodology for nonviral gene transfer. In skeletal muscle, data suggest that electric pulses play two roles: structurally permeabilizing the muscle fibers and electrophoretically supporting the migration of DNA toward or across...... the permeabilized membrane. To investigate this further, combinations of permeabilizing short high-voltage pulses (HV; hundreds of V/cm) and mainly electrophoretic long low-voltage pulses (LV; tens of V/cm) were investigated in muscle, liver, tumor, and skin in rodent models. The following observations were made......, but not to liver; and (4) efficient gene electrotransfer was achieved with HV field strengths below the detectability thresholds for permeabilization; and (5) the lag time interval between the HV and LV pulses decreased sensitivity to the HV pulses, enabling a wider HV amplitude range. In conclusion, HV plus LV...

  12. Space Life Sciences Directorate's Position on the Physiological Effects of Exposing the Crewmemeber to Low-Voltage Electrical Hazards During Extravehicular Activity

    Science.gov (United States)

    Hamilton, Douglas; Kramer, Leonard; Mikatarian, Ron; Polk, James; Duncan, Michael; Koontz, Steven

    2010-01-01

    The models predict that, for low voltage exposures in the space suit, physiologically active current could be conducted across the crew member causing catastrophic hazards. Future work with Naval Health Research Center Detachment Directed Energy Bio-effects Laboratory is being proposed to analyze additional current paths across the human torso and upper limbs. These models may need to be verified with human studies.

  13. Admissibility of building cost subsidy in the power grid above the low voltage level; Zulaessigkeit von Baukostenzuschuessen im Stromnetz oberhalb der Niederspannungsebene

    Energy Technology Data Exchange (ETDEWEB)

    Foerster, Sven [Kanzlei Norton Rose Fulbright LLP, Muenchen(Germany)

    2015-07-01

    Electricity networks are essential to the provision of electrical power to businesses and individuals. In particular for manufacturing businesses a connection to the grid above the low-voltage level is often useful. Network operators demand a subsidy for the new connection and for the change to a higher network level under the auspices of construction cost. The power network market above the low-voltage level is a natural monopoly. This leaves consumers looking for a connection to the power grid with no possibility to select among different network operators. Construction cost subsidies are not regulated by law above the low voltage level. The lack of legal regulation and the natural monopoly above the low-voltage level affect the balance of power between network operators and system users. The lawfulness of the construction cost subsidies, the prerequisites for their demand and a review of the calculation models (Leistungspreismodell, 2-Ebenen-Modell) as well as a proposal for a reform of this system form the subject of this work.

  14. Overvoltage in low voltage systems due to mean voltage manoeuvres; Sobretensoes em sistemas de BT devidas a manobras na media tensao

    Energy Technology Data Exchange (ETDEWEB)

    Pazos, Francisco Jose; Amantegui, Javier; Ferrandis, Francisco; Barona, Amaya [Iberdrola, Madrid (Spain)

    2008-04-15

    The voltage interruption due to mean voltage maneuverers normal operation produces a transient type which is converted in a overvoltage on the low voltage circuit. Nevertheless to be considered a normal phenomena those over voltages have been pointed out as cause for damage in electric home appliances. What are the reasons? Inadequate protection or lack of immunity of the equipment?.

  15. Energy Management System with Equalization Algorithm for Distributed Energy Storage Systems in PV-Active Generator Based Low Voltage DC Microgrids

    DEFF Research Database (Denmark)

    Aldana, Nelson Leonardo Diaz; Hernández, Adriana Carolina Luna; Vasquez, Juan Carlos

    2015-01-01

    This paper presents a centralized strategy for equalizing the state of charge of distributed energy storage systems in an islanded DC microgrid. The proposed strategy is based on a simple algorithm called equalization algorithm, which modifies the charge or discharge rate by weighting the virtual...... results of a low voltage DC microgrid are presented in order to verify the performance of the proposed approach....

  16. A low-voltage Op Amp with rail-to-rail constant-gm input stage and a class AB rail-to-rail output stage

    NARCIS (Netherlands)

    Botma, J.H.; Wassenaar, R.F.; Wiegerink, Remco J.

    1993-01-01

    In this paper a low-voltage two-stage Op Amp is presented. The Op Amp features rail-to-rail operation and has an @put stage with a constant transconductance (%) over the entire common-mode input range. The input stage consists of an n- and a PMOS differential pair connected in parallel. The constant

  17. Decentralized Load Sharing in a Low-Voltage Direct Current Microgrid With an Adaptive Droop Approach Based on a Superimposed Frequency

    DEFF Research Database (Denmark)

    Peyghami, Saeed; Mokhtari, Hossein; Blaabjerg, Frede

    2017-01-01

    Conventional droop methods for load sharing control in low-voltage direct current microgrids suffer from poor power sharing and voltage regulation, especially in the case when operating many dc sources with long feeders. Hence, the communication-based approaches are employed to improve the load s...

  18. Lifetime of Bubble Rafts: Cooperativity and Avalanches

    Science.gov (United States)

    Ritacco, Hernán; Kiefer, Flavien; Langevin, Dominique

    2007-06-01

    We have studied the collapse of pseudo-bi-dimensional foams. These foams are made of uniformly sized soap bubbles packed in an hexagonal lattice sitting at the top of a liquid surface. The collapse process follows the sequence: (1) rupture of a first bubble, driven by thermal fluctuations and (2) a cascade of bursting bubbles. We present a simple numerical model which captures the main characteristics of the dynamics of foam collapse. We show that in a certain range of viscosities of the foaming solutions, the size distribution of the avalanches follows power laws as in self-organized criticality processes.

  19. TCAD simulation of Low Gain Avalanche Detectors

    Science.gov (United States)

    Dalal, Ranjeet; Jain, Geetika; Bhardwaj, Ashutosh; Ranjan, Kirti

    2016-11-01

    In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two trap bulk damage model is used to simulate the radiation damage without implementing any acceptor removal term. The TCAD simulation for irradiated LGAD devices produce decreasing gain with increasing fluence, similar to the measurement results. The space charge density and electric field distribution are used to illustrate the possible reasons for the degradation of gain of the irradiated LGAD devices.

  20. Tuning magnetization avalanches in Mn12-acetate

    Science.gov (United States)

    Wen, Bo; McHugh, S.; Ma, Xiang; Sarachik, M. P.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Christou, G.

    2009-03-01

    We report the results of a systematic study of magnetic avalanches (abrupt magnetization reversals) in the molecular magnet Mn12-acetate using a micron-sized Hall sensor array. Measurements were taken for: (a) fixed magnetic field (constant barrier against spin reversal); and (b) fixed energy release obtained by adjusting the barrier and δM. A detailed comparison with the theory of magnetic deflagration of Garanin and Chudnovsky [1] will be presented and discussed. [1] D. A. Garanin and E. M. Chudnovsky, Phys. Rev. B 76, 054410 (2007)

  1. TCAD simulation of Low Gain Avalanche Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Dalal, Ranjeet; Jain, Geetika; Bhardwaj, Ashutosh, E-mail: ashutosh.bhardwaj@cern.ch; Ranjan, Kirti

    2016-11-11

    In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two trap bulk damage model is used to simulate the radiation damage without implementing any acceptor removal term. The TCAD simulation for irradiated LGAD devices produce decreasing gain with increasing fluence, similar to the measurement results. The space charge density and electric field distribution are used to illustrate the possible reasons for the degradation of gain of the irradiated LGAD devices.

  2. TCAD simulation of Low Gain Avalanche Detectors

    International Nuclear Information System (INIS)

    Dalal, Ranjeet; Jain, Geetika; Bhardwaj, Ashutosh; Ranjan, Kirti

    2016-01-01

    In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two trap bulk damage model is used to simulate the radiation damage without implementing any acceptor removal term. The TCAD simulation for irradiated LGAD devices produce decreasing gain with increasing fluence, similar to the measurement results. The space charge density and electric field distribution are used to illustrate the possible reasons for the degradation of gain of the irradiated LGAD devices.

  3. Electric field distribution and simulation of avalanche formation due ...

    Indian Academy of Sciences (India)

    Electric field distributions and their role in the formation of avalanche due to the passage of heavy ions in parallel grid avalanche type wire chamber detectors are evaluated using a Monte Carlo simulation. The relative merits and demerits of parallel and crossed wire grid configurations are studied. It is found that the crossed ...

  4. High voltage short plus generation based on avalanche circuit

    International Nuclear Information System (INIS)

    Hu Yuanfeng; Yu Xiaoqi

    2006-01-01

    Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

  5. Design and characterization of single photon avalanche diodes arrays

    Science.gov (United States)

    Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

    2010-05-01

    During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

  6. Measuring neuronal avalanches in disordered systems with absorbing states

    Science.gov (United States)

    Girardi-Schappo, M.; Tragtenberg, M. H. R.

    2018-04-01

    Power-law-shaped avalanche-size distributions are widely used to probe for critical behavior in many different systems, particularly in neural networks. The definition of avalanche is ambiguous. Usually, theoretical avalanches are defined as the activity between a stimulus and the relaxation to an inactive absorbing state. On the other hand, experimental neuronal avalanches are defined by the activity between consecutive silent states. We claim that the latter definition may be extended to some theoretical models to characterize their power-law avalanches and critical behavior. We study a system in which the separation of driving and relaxation time scales emerges from its structure. We apply both definitions of avalanche to our model. Both yield power-law-distributed avalanches that scale with system size in the critical point as expected. Nevertheless, we find restricted power-law-distributed avalanches outside of the critical region within the experimental procedure, which is not expected by the standard theoretical definition. We remark that these results are dependent on the model details.

  7. Technical challenges for electric power industries due to grid-integrated electric vehicles in low voltage distributions: A review

    International Nuclear Information System (INIS)

    Haidar, Ahmed M.A.; Muttaqi, Kashem M.; Sutanto, Danny

    2014-01-01

    Highlights: • Grid-Integrated Vehicles (GIVs) as mobile storage systems are briefly discussed. • Comparative analysis on electric vehicles (EVs) and charging systems are provided. • It is necessary to coordinate the GIVs to minimize its impacts on power grid. • A proper load model of EVs that predicts the realistic system behavior is required. • Offering a dual tariff by grid utilities is needed as a way to reduce peak load. - Abstract: Grid-Integrated Vehicles (GIVs) are promising technologies for future Smart Grid (SG) and offer the potential to reduce the environmental impact of vehicles. The large scale deployment of GIVs without proper control of the time to charge the vehicles can result in unexpected challenges. This can lead to a disruptive impact on the current power distribution systems and in particular its substantial impacts in building power energy systems. Therefore, a proper model that predicts the realistic system behavior is required to analysis the true effects of introducing GIVs in the power grid. This paper presents a review of existing studies on GIV systems, their modeling techniques and their effects on power grids. Following a brief overview of the common types of electric vehicles (EVs) with their charging systems, a review of their impact on the low voltage distribution systems will be analyzed. The comprehensive review presented in this paper reveals that the impact of GIVs on power distribution systems can be quantified using the aspects of EVs, such as vehicle penetration, charging time, charging characteristics, driving patterns, transportation network. GIV studies are expected to be more popular in future years with the development of EV technologies and the government support to electricity utilities. Thereby, these factors will reduce the cost of energy to charge EV and enhance the practical implications of GIVs

  8. Battery Storage Systems as Grid-Balancing Measure in Low-Voltage Distribution Grids with Distributed Generation

    Directory of Open Access Journals (Sweden)

    Bernhard Faessler

    2017-12-01

    Full Text Available Due to the promoted integration of renewable sources, a further growth of strongly transient, distributed generation is expected. Thus, the existing electrical grid may reach its physical limits. To counteract this, and to fully exploit the viable potential of renewables, grid-balancing measures are crucial. In this work, battery storage systems are embedded in a grid simulation to evaluate their potential for grid balancing. The overall setup is based on a real, low-voltage distribution grid topology, real smart meter household load profiles, and real photovoltaics load data. An autonomous optimization routine, driven by a one-way communicated incentive, determines the prospective battery operation mode. Different battery positions and incentives are compared to evaluate their impact. The configurations incorporate a baseline simulation without storage, a single, central battery storage or multiple, distributed battery storages which together have the same power and capacity. The incentives address either market conditions, grid balancing, optimal photovoltaic utilization, load shifting, or self-consumption. Simulations show that grid-balancing incentives result in lowest peak-to-average power ratios, while maintaining negligible voltage changes in comparison to a reference case. Incentives reflecting market conditions for electricity generation, such as real-time pricing, negatively influence the power quality, especially with respect to the peak-to-average power ratio. A central, feed-in-tied storage performs better in terms of minimizing the voltage drop/rise and shows lower distribution losses, while distributed storages attached at nodes with electricity generation by photovoltaics achieve lower peak-to-average power ratios.

  9. Electrospraying and ultraviolet light curing of nanometer-thin polydimethylsiloxane membranes for low-voltage dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Töpper, Tino; Siketanc, Matej; Kovacs, Gabor M.; Müller, Bert

    2017-04-01

    Dielectric elastomer transducers (DETs) have attracted interest as actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. To reach strains of more than 10 %, they currently require operating voltages of several hundred volts. In medical applications for artificial muscles, however, their operation is limited to a very few tens of volts, which implies high permittivity materials and thin-film structures. Such micro- or nanostructures can be prepared using electro-spraying, a cost-effective technique that allows upscaling using multiple nozzles for the fabrication of silicone films down to nanometer thickness. Deposition rates of several micrometers per hour have already been reached. It has been recently demonstrated that such membranes can be fabricated by electro-spraying and subsequent ultraviolet light irradiation. Herein, we introduce a relatively fast deposition of a dimethyl silicone copolymer fluid that contains mercaptopropyl side chains in addition to the methyl groups. Its elastic modulus was tuned with the irradiation dose of the 200 W Hg-Xe lamp. We also investigated the formation of elastomer films, using polymer concentrations in ethyl acetate of 1, 2, 5 and 10 vol%. After curing, the surface roughness was measured by means of atomic force microscopy. This instrument also enabled us to determine the average elastic modulus out of, for example, 400 nanoindentation measurements, using a spherical tip with a radius of 500 nm. The elastomer films were cured for a period of less than one minute, a speed that makes it feasible to combine electro-spraying and in situ curing in a single process step for fabricating low-voltage, multilayer DETs.

  10. Controlled Operation of the Islanded Portion of the International Council on Large Electric Systems (CIGRE Low Voltage Distribution Network

    Directory of Open Access Journals (Sweden)

    Ghullam Mustafa Bhutto

    2017-07-01

    Full Text Available In islanding, a portion of the power network, comprised of the loads and distributed generation (DG units, is isolated from the rest of the power grid and forms a micro grid (MG. In this condition, it becomes essential for the islanded MG to operate in a stable and controlled manner by providing ancillary services. When the MG is cut off from the main grid, the islanding must be detected by the DG units. In this condition it is essential that one of the controllers should be switched to the voltage-frequency (VF control mode. In islanding, the network loses it slack reference and this reference is established by a VF controller. The voltage and the frequency of the islanded MG deviate when disconnected from the transmission grid and these deviations are caused by the load-generation imbalance. The voltage and the frequency of the islanded MG can be restored to the permissible limits if the desired/exceeded amount of active and reactive power is injected/absorbed by the locally available sources in islanded MG. This paper proposes a control strategy which can compensate the voltage and the frequency deviations in the islanded portion of the International Council on Large Electric Systems (CIGRE low voltage distribution network by using advanced power electronics devices such as STATCOMs for Photovoltaic (PV Units and Battery Energy Storage Systems (BESS STATCOMs (for battery units. The selection of the VF controller for the most suitable DG unit of this test network is also presented in this paper, and the effectiveness of the controllers is verified by presenting simulation results using DIgSILENT (DIgSILENT GmbH, Gomaringen, Germany power factory software version 15.0.

  11. Reducing financial avalanches by random investments

    Science.gov (United States)

    Biondo, Alessio Emanuele; Pluchino, Alessandro; Rapisarda, Andrea; Helbing, Dirk

    2013-12-01

    Building on similarities between earthquakes and extreme financial events, we use a self-organized criticality-generating model to study herding and avalanche dynamics in financial markets. We consider a community of interacting investors, distributed in a small-world network, who bet on the bullish (increasing) or bearish (decreasing) behavior of the market which has been specified according to the S&P 500 historical time series. Remarkably, we find that the size of herding-related avalanches in the community can be strongly reduced by the presence of a relatively small percentage of traders, randomly distributed inside the network, who adopt a random investment strategy. Our findings suggest a promising strategy to limit the size of financial bubbles and crashes. We also obtain that the resulting wealth distribution of all traders corresponds to the well-known Pareto power law, while that of random traders is exponential. In other words, for technical traders, the risk of losses is much greater than the probability of gains compared to those of random traders.

  12. Avalanches of Singing Sand in the Laboratory

    Science.gov (United States)

    Dagois-Bohy, Simon; Courrech Du Pont, Sylvain; Douady, Stéphane

    2011-03-01

    The song of dunes is a natural phenomenon that has arisen travellers' curiosity for a long time, from Marco Polo to R.A. Bagnold. Scientific observations in the XXth century have shown that the sound is emitted during a shear flow of these particular grains, the free surface of the flow having coherent vibrations like a loud speaker. The sound emission is also submitted to a threshold effect with many parameters like humidity, flow speed, surface of the grains. The sound has been reproduced in laboratory avalanche experiments close to the natural phenomenon on field, but set in a channel with a hard bottom and a few centimeters of sand flowing, which contradicts explanations of the sound that involve a sand dune under the avalanche flow. Flow rates measurements also show the presence of a plug region in the flow above the sheared band, with the same characteristic length as the coherence zones of the sound. Finally we show experimentally that the Froude number, once modified to take into account the height of this plug band, is the parameter that sets the amplitude of the sound, and produces a threshold that depends on the grain type.

  13. Townsend coefficients of gases in avalanche counters

    International Nuclear Information System (INIS)

    Brunner, G.

    1978-01-01

    Though much work has been done by many authors in the last few years in the development and application of avalanche counters for ion radiation, it is based upon values of the Townsend coefficients as the essential gas parameter, which were determined many years ago for much lower reduced field strengths F/p than prevail in such counters. Therefore absolute determinations of α in vapours of methyl alcohol, cyclohexane, acetone, and n-heptene were performed under original conditions of avalanche counters. The values obtained do not differ by more than 30%-50% from the former values indeed, extrapolated over F/p for the first three mentioned substances, but the amounts of A and B in the usual representation α/p=A exp(-B(F/p)) are much greater for the stronger reduced fields. This is of importance for such counter properties as the dependence of pulse heights on pressure, voltage, electrode distance etc., which are governed by other combinations of A and B than α/p itself. A comparison of results for different ionic radiations shows a marked influence of the primary ionization density along the particle tracks which is hard to explain. (Auth.)

  14. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    Melo, F.A. de.

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  15. Discussion about photodiode architectures for space applications

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.; Cervera, C.; Zanatta, J.-P.; Baier, N.; Ferron, A.; Boulade, O.

    2017-11-01

    configuration is a low flux application but the need for speed distinguishes it from other low flux applications as it usually requires a different ROIC architecture and a photodiode optimized for high response speed.

  16. Properties of the photodiode PiN as neutron detector

    International Nuclear Information System (INIS)

    Adamiec, G.; Iniguez, M.P.; Lorente, A.; Gallego, E.; Voytchev, M.

    2005-01-01

    The photodiode can be used to measure the ambient dose equivalent for an Am-Be source, as well placed in a paraffin sphere with LiF 6 converter as nude with a PE converter. The ratio between the counting rate and the ambient dose equivalent is linear in the two cases. The sensitivity of the diode with the converter 6 LiF is evaluated to 8.4 shocks by micro sievert by square centimeter of active surface of diode. The photodiode with the PE converter has a sensitivity lower of 2.1 shocks by micro sievert by square centimeter (for the Am-Be source) of active surface of diode. About the disadvantages, the disadvantage of photodiode inside the paraffin sphere is its size and weight; the disadvantage of the diode with the PE converter is its sensitivity to the orientation of the neutron flux and the necessity to calibrate for the source type. (N.C.)

  17. Heat pump and PV impact on residential low-voltage distribution grids as a function of building and district properties

    International Nuclear Information System (INIS)

    Protopapadaki, Christina; Saelens, Dirk

    2017-01-01

    Highlights: • Comprehensive method includes variability in building and feeder characteristics. • Detailed, 10-min, Modelica-based simulation of buildings, heat pumps and networks. • Overloading and voltage issues appear from 30% heat pumps in rural Belgian feeders. • Analysis of load profiles reveals great impact of heat pump back-up heaters. • High correlation of building neighborhood properties with grid impact indicators. - Abstract: Heating electrification powered by distributed renewable energy generation is considered among potential solutions towards mitigation of greenhouse gas emissions. Roadmaps propose a wide deployment of heat pumps and photovoltaics in the residential sector. Since current distribution grids are not designed to accommodate these loads, potential benefits of such policies might be compromised. However, in large-scale analyses, often grid constraints are neglected. On the other hand, grid impact of heat pumps and photovoltaics has been investigated without considering the influence of building characteristics. This paper aims to assess and quantify in a probabilistic way the impact of these technologies on the low-voltage distribution grid, as a function of building and district properties. The Monte Carlo approach is used to simulate an assortment of Belgian residential feeders, with varying size, cable type, heat pump and PV penetration rates, and buildings of different geometry and insulation quality. Modelica-based models simulate the dynamic behavior of both buildings and heating systems, as well as three-phase unbalanced loading of the network. Additionally, stochastic occupant behavior is taken into account. Analysis of neighborhood load profiles puts into perspective the importance of demand diversity in terms of building characteristics and load simultaneity, highlighting the crucial role of back-up electrical loads. It is shown that air-source heat pumps have a greater impact on the studied feeders than PV, in terms

  18. Overspill avalanching in a dense reservoir network

    Science.gov (United States)

    Mamede, George L.; Araújo, Nuno A. M.; Schneider, Christian M.; de Araújo, José Carlos; Herrmann, Hans J.

    2012-01-01

    Sustainability of communities, agriculture, and industry is strongly dependent on an effective storage and supply of water resources. In some regions the economic growth has led to a level of water demand that can only be accomplished through efficient reservoir networks. Such infrastructures are not always planned at larger scale but rather made by farmers according to their local needs of irrigation during droughts. Based on extensive data from the upper Jaguaribe basin, one of the world’s largest system of reservoirs, located in the Brazilian semiarid northeast, we reveal that surprisingly it self-organizes into a scale-free network exhibiting also a power-law in the distribution of the lakes and avalanches of discharges. With a new self-organized-criticality-type model we manage to explain the novel critical exponents. Implementing a flow model we are able to reproduce the measured overspill evolution providing a tool for catastrophe mitigation and future planning. PMID:22529343

  19. Asymmetrical Grid Fault Ride-Through Strategy of Three-phase Grid-connected Inverter Considering Network Impedance Impact in Low Voltage Grid

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Zhang, Xue; Wang, Baocheng

    2014-01-01

    This letter presents a new control strategy of threephase grid-connected inverter for the positive sequence voltage recovery and negative sequence voltage reduction under asymmetrical grid faults. Unlike the conventional control strategy based on an assumption that the network impedance is mainly...... of the proposed solution for the flexible voltage support in a low-voltage grid, where thenetwork impedance is mainly resistive.......This letter presents a new control strategy of threephase grid-connected inverter for the positive sequence voltage recovery and negative sequence voltage reduction under asymmetrical grid faults. Unlike the conventional control strategy based on an assumption that the network impedance is mainly...... inductive, the proposed control strategy is more flexible and effective by considering the network impedance impact, which is of great importance for the high penetration of grid-connected renewable energy systems into low-voltage grids. The experimental tests are carried out to validate the effectiveness...

  20. Conventional P-ω/Q-V Droop Control in Highly Resistive Line of Low-Voltage Converter-Based AC Microgrid

    DEFF Research Database (Denmark)

    Hou, Xiaochao; Sun, Yao; Yuan, Wenbin

    2016-01-01

    -ω/Q-V droop control is adopted in the low-voltage AC microgrid. As a result, the active power sharing among the distributed generators (DGs) is easily obtained without communication. More importantly, this study clears up the previous misunderstanding that conventional P-ω/Q-V droop control is only applicable...... to microgrids with highly inductive lines, and lays a foundation for the application of conventional droop control under different line impedances. Moreover, in order to guarantee the accurate reactive power sharing, a guide for designing Q-V droop gains is given, and virtual resistance is adopted to shape......In low-voltage converter-based alternating current (AC) microgrids with resistive distribution lines, the P-V droop with Q-f boost (VPD/FQB) is the most common method for load sharing. However, it cannot achieve the active power sharing proportionally. To overcome this drawback, the conventional P...

  1. Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

    Energy Technology Data Exchange (ETDEWEB)

    Savic, M.S.

    1986-07-01

    The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

  2. Computer aided method of low voltage power distribution networks protection system against lightning and electromagnetic pulse generated by high altitude nuclear burst

    International Nuclear Information System (INIS)

    Laroubine, J.

    1989-01-01

    The lightning creates an electromagnetic field which produces a slow duration and high energy pulse of current on low voltage power distribution networks. On the other hand an high altitude nuclear burst generates an electromagnetic pulse which causes fast and intense interferences. We describe here the specifications of a passive filter that can reject these interferences. We used a computer aided method of simulation to create a prototype. Experimental results confirm the validity of the model used for simulation [fr

  3. Anthropogenic effect on avalanche and debris flow activity

    Directory of Open Access Journals (Sweden)

    S. A. Sokratov

    2013-01-01

    Full Text Available The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoidable changes of the natural environment as the result of a construction and of use of the constructed infrastructure to be account for in corresponding planning of the protection measures.

  4. Avalanche localization and its effects in proportional counters

    International Nuclear Information System (INIS)

    Fischer, J.; Okuno, H.; Walenta, A.H.

    1977-11-01

    Avalanche development around the anode wire in a gas proportional counter is investigated. In the region of proportional gas amplification, the avalanche is found to be well localized on one side of the anode wire, where the electrons arrive along the field lines from the point of primary ionization. Induced signals on electrodes surrounding the anode wire are used to measure the azimuthal position of the avalanche on the anode wire. Practical applications of the phenomena such as left-right assignment in drift chambers and measurement of the angular direction of the primary ionization electrons drifting towards the anode wire are discussed

  5. Study of the effect of Pyrophosphate in low voltage Plasma Electrolytic Oxidation on the corrosion resistance of AZ31B Magnesium alloy

    International Nuclear Information System (INIS)

    Yun, Jae Gon; Kim, Eng Chan; Kim, Ki Hong

    2016-01-01

    In this study, low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate the drawbacks of high voltage PEO such as high cost, dimensional deformation, and porosity. Low voltage PEO produces a thin coating, which leads to low corrosion resistance. In order to solve this problem, 0.1⁓0.6 M pyrophosphates were added to a bath containing 1.4 M NaOH and 0.35 M Na_2SiO_3.PEO at 70V was conducted at 25℃ for 3 minutes. The chemical composition, morphology, and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg_2SiO_4, and Mg_2O_7P_2. Themorphology of the film showed a inappropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide good corrosion protection for the AZ31B magnesium alloy.

  6. Study of the effect of Pyrophosphate in low voltage Plasma Electrolytic Oxidation on the corrosion resistance of AZ31B Magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Jae Gon; Kim, Eng Chan [Yeungnam University, Gyeongsan (Korea, Republic of); Kim, Ki Hong [Catholic University of Daegu, Gyeongsan (Korea, Republic of)

    2016-01-15

    In this study, low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate the drawbacks of high voltage PEO such as high cost, dimensional deformation, and porosity. Low voltage PEO produces a thin coating, which leads to low corrosion resistance. In order to solve this problem, 0.1⁓0.6 M pyrophosphates were added to a bath containing 1.4 M NaOH and 0.35 M Na{sub 2}SiO{sub 3}.PEO at 70V was conducted at 25℃ for 3 minutes. The chemical composition, morphology, and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg{sub 2}SiO{sub 4}, and Mg{sub 2}O{sub 7}P{sub 2}. Themorphology of the film showed a inappropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide good corrosion protection for the AZ31B magnesium alloy.

  7. Simulator of Non-homogenous Alumina and Current Distribution in an Aluminum Electrolysis Cell to Predict Low-Voltage Anode Effects

    Science.gov (United States)

    Dion, Lukas; Kiss, László I.; Poncsák, Sándor; Lagacé, Charles-Luc

    2018-04-01

    Perfluorocarbons are important contributors to aluminum production greenhouse gas inventories. Tetrafluoromethane and hexafluoroethane are produced in the electrolysis process when a harmful event called anode effect occurs in the cell. This incident is strongly related to the lack of alumina and the current distribution in the cell and can be classified into two categories: high-voltage and low-voltage anode effects. The latter is hard to detect during the normal electrolysis process and, therefore, new tools are necessary to predict this event and minimize its occurrence. This paper discusses a new approach to model the alumina distribution behavior in an electrolysis cell by dividing the electrolytic bath into non-homogenous concentration zones using discrete elements. The different mechanisms related to the alumina distribution are discussed in detail. Moreover, with a detailed electrical model, it is possible to calculate the current distribution among the different anodic assemblies. With this information, the model can evaluate if low-voltage emissions are likely to be present under the simulated conditions. Using the simulator will help the understanding of the role of the alumina distribution which, in turn, will improve the cell energy consumption and stability while reducing the occurrence of high- and low-voltage anode effects.

  8. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

    2014-08-15

    A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  9. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Directory of Open Access Journals (Sweden)

    Qi Liu

    2014-08-01

    Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  10. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-01-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  11. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  12. Visible light photodiodes and photovoltages from detonation nanodiamonds

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Stehlík, Štěpán; Kromka, Alexander; Arnault, J.-C.; Weis, M.; Jakabovič, J.

    2016-01-01

    Roč. 1, č. 14 (2016), s. 971-975 ISSN 2059-8521 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamond * photodiode Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Calibration of snow avalanche mathematical models using the data of real avalanches in the Ile (Zailiyskiy Alatau Range

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2017-01-01

    Full Text Available The calibration of the dry friction and turbulent friction coefficients is necessary for computer simulation of avalanches. The method of back calculation based on data on actual avalanches is used for this purpose. The article presents the results of the calibration of the Eglit’s and RAMMS models for Ile Alatau range condi‑ tions. The range is located in Kazakhstan. The data on six avalanches in the same avalanche site were used. Five avalanches were dry, and one avalanche was wet. Avalanches volume varied from 2000 to 12000  m3. Maximum speed avalanches were between 15 and 30  m/s, the flow height  – from 3 to 10  m. Series of back calculations with different values of the friction coefficients was made to obtain the calibrated coeffi‑ cients. The calibrated coefficients were chosen under condition of the best fit with real avalanches. The cal‑ ibrated coefficients were following. For the Eglit’s model for dry avalanches of the volume 2000–5000  m3 μ = 0.46÷0.48, k = 0.005–0.006, and the volume 8000–12000 m3 μ = 0.38÷0.42, k = 0.002÷0.003. For RAMMS model for dry avalanches of the volume of 2000–5000 m3 μ (dry friction coefficient = 0.35÷0.4, ξ (viscous friction coefficient = 1500÷2000 m/s2, and the volume 8,000–12,000 m3 μ = 0.3÷0.35, ξ = 2000÷3000 m/s2. For wet avalanches of the volume 12,000 m3 μ = 0.35, ξ = 1500 m/s2. The work on the calibration will be con‑ tinued to obtain the friction coefficients for the Eglit’s and RAMMS models. The additional data on real ava‑ lanches will be needed for this purpose.

  14. Relation of the runaway avalanche threshold to momentum space topology

    Science.gov (United States)

    McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

    2018-02-01

    The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

  15. Discrimination capability of avalanche counters detecting different ionizing particles

    International Nuclear Information System (INIS)

    Prete, G.; Viesti, G.; Padua Univ.

    1985-01-01

    The discrimination capability of avalanche counters to detect different ionizing particles has been studied using a 252 Cf source. Pulse height, pulse-height resolution and timing properties have been measured as a function of the reduced applied voltage for parallel-plate and parallel-grid avalanche counters. At the highest applied voltages, space charge effects shift the pulse-height signal of the avalanche counter away from being linearly proportional to the stopping power of the detected particles and cause the pulse-height resolution to deteriorate. To optimize the avalanche counter capability, without loss of time resolution, it appears better to operate the detector at voltages well below the breakdown threshold. Measurements with 32 S ions are also reported. (orig.)

  16. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  17. Transient events in bright debris discs: Collisional avalanches revisited

    Science.gov (United States)

    Thebault, P.; Kral, Q.

    2018-01-01

    Context. A collisional avalanche is set off by the breakup of a large planetesimal, releasing vast amounts of small unbound grains that enter a debris disc located further away from the star, triggering there a collisional chain reaction that could potentially create detectable transient structures. Aims: We investigate this mechanism, using for the first time a fully self-consistent code coupling dynamical and collisional evolutions. We also quantify for the first time the photometric evolution of the system and investigate whether or not avalanches could explain the short-term luminosity variations recently observed in some extremely bright debris discs. Methods: We use the state-of-the-art LIDT-DD code. We consider an avalanche-favoring A6V star, and two set-ups: a "cold disc" case, with a dust release at 10 au and an outer disc extending from 50 to 120 au, and a "warm disc" case with the release at 1 au and a 5-12 au outer disc. We explore, in addition, two key parameters: the density (parameterized by its optical depth τ) of the main outer disc and the amount of dust released by the initial breakup. Results: We find that avalanches could leave detectable structures on resolved images, for both "cold" and "warm" disc cases, in discs with τ of a few 10-3, provided that large dust masses (≳1020-5 × 1022 g) are initially released. The integrated photometric excess due to an avalanche is relatively limited, less than 10% for these released dust masses, peaking in the λ 10-20 μm domain and becoming insignificant beyond 40-50 μm. Contrary to earlier studies, we do not obtain stronger avalanches when increasing τ to higher values. Likewise, we do not observe a significant luminosity deficit, as compared to the pre-avalanche level, after the passage of the avalanche. These two results concur to make avalanches an unlikely explanation for the sharp luminosity drops observed in some extremely bright debris discs. The ideal configuration for observing an

  18. La Carte de Localisation Probable des Avalanches (CPLA

    Directory of Open Access Journals (Sweden)

    Gilles BORREL

    1994-12-01

    Full Text Available La Carte de Localisation Probable des Avalanches (CPLA indique l’enveloppe des limites extrêmes connues atteintes par les avalanches, ainsi que les travaux de protection associés. Il s’agit d’un document informatif et non d’une carte de risque. Depuis 1990, les données thématiques sont numérisées.

  19. Stretched exponentials and power laws in granular avalanching

    Science.gov (United States)

    Head, D. A.; Rodgers, G. J.

    1999-02-01

    We introduce a model for granular surface flow which exhibits both stretched exponential and power law avalanching over its parameter range. Two modes of transport are incorporated, a rolling layer consisting of individual particles and the overdamped, sliding motion of particle clusters. The crossover in behaviour observed in experiments on piles of rice is attributed to a change in the dominant mode of transport. We predict that power law avalanching will be observed whenever surface flow is dominated by clustered motion.

  20. Avalanche outbreaks emerging in cooperative contagions

    Science.gov (United States)

    Cai, Weiran; Chen, Li; Ghanbarnejad, Fakhteh; Grassberger, Peter

    2015-11-01

    The spreading of contagions can exhibit a percolation transition, which separates transitory prevalence from outbreaks that reach a finite fraction of the population. Such transitions are commonly believed to be continuous, but empirical studies have shown more violent spreading modes when the participating agents are not limited to one type. Striking examples include the co-epidemic of the Spanish flu and pneumonia that occurred in 1918 (refs , ), and, more recently, the concurrent prevalence of HIV/AIDS and a host of diseases. It remains unclear to what extent an outbreak in the presence of interacting pathogens differs from that due to an ordinary single-agent process. Here we study a mechanistic model for understanding contagion processes involving inter-agent cooperation. Our stochastic simulations reveal the possible emergence of a massive avalanche-like outbreak right at the threshold, which is manifested as a discontinuous phase transition. Such an abrupt change arises only if the underlying network topology supports a bottleneck for cascaded mutual infections. Surprisingly, all these discontinuous transitions are accompanied by non-trivial critical behaviours, presenting a rare case of hybrid transition. The findings may imply the origin of catastrophic occurrences in many realistic systems, from co-epidemics to financial contagions.

  1. First approximations in avalanche model validations using seismic information

    Science.gov (United States)

    Roig Lafon, Pere; Suriñach, Emma; Bartelt, Perry; Pérez-Guillén, Cristina; Tapia, Mar; Sovilla, Betty

    2017-04-01

    Avalanche dynamics modelling is an essential tool for snow hazard management. Scenario based numerical modelling provides quantitative arguments for decision-making. The software tool RAMMS (WSL Institute for Snow and Avalanche Research SLF) is one such tool, often used by government authorities and geotechnical offices. As avalanche models improve, the quality of the numerical results will depend increasingly on user experience on the specification of input (e.g. release and entrainment volumes, secondary releases, snow temperature and quality). New model developments must continue to be validated using real phenomena data, for improving performance and reliability. The avalanches group form University of Barcelona (RISKNAT - UB), has studied the seismic signals generated from avalanches since 1994. Presently, the group manages the seismic installation at SLF's Vallée de la Sionne experimental site (VDLS). At VDLS the recorded seismic signals can be correlated to other avalanche measurement techniques, including both advanced remote sensing methods (radars, videogrammetry) and obstacle based sensors (pressure, capacitance, optical sender-reflector barriers). This comparison between different measurement techniques allows the group to address the question if seismic analysis can be used alone, on more additional avalanche tracks, to gain insight and validate numerical avalanche dynamics models in different terrain conditions. In this study, we aim to add the seismic data as an external record of the phenomena, able to validate RAMMS models. The seismic sensors are considerable easy and cheaper to install than other physical measuring tools, and are able to record data from the phenomena in every atmospheric conditions (e.g. bad weather, low light, freezing make photography, and other kind of sensors not usable). With seismic signals, we record the temporal evolution of the inner and denser parts of the avalanche. We are able to recognize the approximate position

  2. Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

    2015-07-15

    A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

  3. Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

    International Nuclear Information System (INIS)

    Kyuregyan, A. S.

    2015-01-01

    A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

  4. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  5. Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer.

    Science.gov (United States)

    Amin, Atefeh Y; Khassanov, Artoem; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2012-10-10

    An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

  6. DC-link Voltage Control to Compensate Voltage Deviation for PV–BESSs Integrated System in Low-Voltage (LV Networks

    Directory of Open Access Journals (Sweden)

    Lee Gyu-sub

    2016-01-01

    Full Text Available The exhaustion of fossil fuel and the greenhouse gas emission are one of the most significant energy and environmental issues, respectively. Photovoltaic (PV generators and battery energy storage systems (BESSs have been significantly increased for recent years. The BESSs are mainly used for smoothing active power fluctuation of the PV. In this paper, PV–BESSs integration of two DC/DC converters and one AC/DC converter is investigated and DC-link voltage control to compensate the AC voltage deviation is proposed for the PV‒BESS system in low-voltage (LV networks.

  7. Integrating Multi-Domain Distributed Energy Systems with Electric Vehicle PQ Flexibility: Optimal Design and Operation Scheduling for Sustainable Low-Voltage Distribution Grids

    DEFF Research Database (Denmark)

    Morvaj, Boran; Knezovic, Katarina; Evins, Ralph

    2016-01-01

    on the grid operation, in addition to coordinated charging, is analysed. Results showed that when the system can be optimally designed, emissions decrease by 64% and additionally 32% with proactive EV integration, whereas EV reactive power control enables integration of larger EV amounts and provides...... in the stable operation. The model was applied to a real low-voltage Danish distribution grid where measurement data is available on hourly basis in order to determine EV flexibility impacts on carbon emissions, as well as the benefits of optimal DES design. The influence of EV reactive power control...

  8. A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

    International Nuclear Information System (INIS)

    Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

    2008-01-01

    In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

  9. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  10. Radiated power measurement with AXUV photodiodes in EAST tokamak

    International Nuclear Information System (INIS)

    Duan Yanmin; Hu Liqun; Du Wei; Mao Songtao; Chen Kaiyun; Zhang Jizhong

    2013-01-01

    The fast bolometer diagnostic system for absolute radiated power measurement on EAST tokamak is introduced, which is based on the absolute extreme ultraviolet (AXUV) photodiodes. The relative calibration of AXUV detectors is carried out using X-ray tube and standard luminance source in order to evaluate the sensitivity degradation caused by cumulative radiation damage during experiments. The calibration result shows a 23% sensitivity decrease in the X-ray range for the detector suffering ∼27000 discharges, but the sensitivity for the visible light changes little. The radiated power measured by AXUV photodiodes is compared with that measured by resistive bolometer. The total radiated power in main plasma deduced from AXUV detector is lower a factor of 1∼4 than that deduced from resistive bolometer. Some typical measurement results are also shown in this article. (author)

  11. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  12. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  13. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    Ferreira Filho, Alfredo Lopes

    1998-06-01

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm 2 , window of thickness equal or lower than 57 mg/cm 2 , depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  14. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  15. Intermittent flow under constant forcing: Acoustic emission from creep avalanches

    Science.gov (United States)

    Salje, Ekhard K. H.; Liu, Hanlong; Jin, Linsen; Jiang, Deyi; Xiao, Yang; Jiang, Xiang

    2018-01-01

    While avalanches in field driven ferroic systems (e.g., Barkhausen noise), domain switching of martensitic nanostructures, and the collapse of porous materials are well documented, creep avalanches (avalanches under constant forcing) were never observed. Collapse avalanches generate particularly large acoustic emission (AE) signals and were hence chosen to investigate crackling noise under creep conditions. Piezoelectric SiO2 has a strong piezoelectric response even at the nanoscale so that we chose weakly bound SiO2 spheres in natural sandstone as a representative for the study of avalanches under time-independent, constant force. We found highly non-stationary crackling noise with four activity periods, each with power law distributed AE emission. Only the period before the final collapse shows the mean field behavior (ɛ near 1.39), in agreement with previous dynamic measurements at a constant stress rate. All earlier event periods show collapse with larger exponents (ɛ = 1.65). The waiting time exponents are classic with τ near 2.2 and 1.32. Creep data generate power law mixing with "effective" exponents for the full dataset with combinations of mean field and non-mean field regimes. We find close agreement with the predicted time-dependent fiber bound simulations, including events and waiting time distributions. Båth's law holds under creep conditions.

  16. 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

    Science.gov (United States)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-02-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

  17. High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

    Science.gov (United States)

    Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

    2016-02-01

    The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

  18. 18/20 T high magnetic field scanning tunneling microscope with fully low voltage operability, high current resolution, and large scale searching ability.

    Science.gov (United States)

    Li, Quanfeng; Wang, Qi; Hou, Yubin; Lu, Qingyou

    2012-04-01

    We present a home-built 18/20 T high magnetic field scanning tunneling microscope (STM) featuring fully low voltage (lower than ±15 V) operability in low temperatures, large scale searching ability, and 20 fA high current resolution (measured by using a 100 GOhm dummy resistor to replace the tip-sample junction) with a bandwidth of 3.03 kHz. To accomplish low voltage operation which is important in achieving high precision, low noise, and low interference with the strong magnetic field, the coarse approach is implemented with an inertial slider driven by the lateral bending of a piezoelectric scanner tube (PST) whose inner electrode is axially split into two for enhanced bending per volt. The PST can also drive the same sliding piece to inertial slide in the other bending direction (along the sample surface) of the PST, which realizes the large area searching ability. The STM head is housed in a three segment tubular chamber, which is detachable near the STM head for the convenience of sample and tip changes. Atomic resolution images of a graphite sample taken under 17.6 T and 18.0001 T are presented to show its performance. © 2012 American Institute of Physics

  19. Conventional P-ω/Q-V Droop Control in Highly Resistive Line of Low-Voltage Converter-Based AC Microgrid

    Directory of Open Access Journals (Sweden)

    Xiaochao Hou

    2016-11-01

    Full Text Available In low-voltage converter-based alternating current (AC microgrids with resistive distribution lines, the P-V droop with Q-f boost (VPD/FQB is the most common method for load sharing. However, it cannot achieve the active power sharing proportionally. To overcome this drawback, the conventional P-ω/Q-V droop control is adopted in the low-voltage AC microgrid. As a result, the active power sharing among the distributed generators (DGs is easily obtained without communication. More importantly, this study clears up the previous misunderstanding that conventional P-ω/Q-V droop control is only applicable to microgrids with highly inductive lines, and lays a foundation for the application of conventional droop control under different line impedances. Moreover, in order to guarantee the accurate reactive power sharing, a guide for designing Q-V droop gains is given, and virtual resistance is adopted to shape the desired output impedance. Finally, the effects of power sharing and transient response are verified through simulations and experiments in converter-based AC Microgrid.

  20. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Science.gov (United States)

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.