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Sample records for low-temperature gan buffer

  1. Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

    Science.gov (United States)

    Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

    2016-12-01

    In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

  2. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    Science.gov (United States)

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  3. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Science.gov (United States)

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Atomic layer deposition of GaN at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2012-01-15

    The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

  6. Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    International Nuclear Information System (INIS)

    Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2010-01-01

    Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

  7. Thermal buffering performance of composite phase change materials applied in low-temperature protective garments

    Science.gov (United States)

    Yang, Kai; Jiao, Mingli; Yu, Yuanyuan; Zhu, Xueying; Liu, Rangtong; Cao, Jian

    2017-07-01

    Phase change material (PCM) is increasingly being applied in the manufacturing of functional thermo-regulated textiles and garments. This paper investigated the thermal buffering performance of different composite PCMs which are suitable for the application in functional low-temperature protective garments. First, according to the criteria selecting PCM for functional textiles/garments, three kinds of pure PCM were selected as samples, which were n-hexadecane, n-octadecane and n-eicosane. To get the adjustable phase change temperature range and higher phase change enthalpy, three kinds of composite PCM were prepared using the above pure PCM. To evaluate the thermal buffering performance of different composite PCM samples, the simulated low-temperature experiments were performed in the climate chamber, and the skin temperature variation curves in three different low temperature conditions were obtained. Finally composite PCM samples’ thermal buffering time, thermal buffering capacity and thermal buffering efficiency were calculated. Results show that the comprehensive thermal buffering performance of n-octadecane and n-eicosane composite PCM is the best.

  8. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  9. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  10. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  11. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

    International Nuclear Information System (INIS)

    Fong, W.K.; Ng, S.W.; Leung, B.H.; Surya, Charles

    2003-01-01

    We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer/GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer/GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs

  12. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    Energy Technology Data Exchange (ETDEWEB)

    Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

    2017-02-15

    High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

  13. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    International Nuclear Information System (INIS)

    Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

    2017-01-01

    High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

  14. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  15. The residual C concentration control for low temperature growth p-type GaN

    International Nuclear Information System (INIS)

    Liu Shuang-Tao; Zhao De-Gang; Yang Jing; Jiang De-Sheng; Liang Feng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Li Xiang; Liu Wei; Xing Yao; Zhang Li-Qun

    2017-01-01

    In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration: (i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp 2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp 2 Mg flow; (iii) annealing outside of metal–organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration. (paper)

  16. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

    2011-01-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  17. Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

    Directory of Open Access Journals (Sweden)

    Chunfu Zhang

    2016-01-01

    Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

  18. Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

    2012-01-01

    a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

  19. Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

    2006-01-01

    Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

  20. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  1. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

    Science.gov (United States)

    Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

    2017-08-01

    In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

  2. Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

    KAUST Repository

    Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

    2014-01-01

    In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

  3. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Capezzuto, P.; Bruno, G. [Plasmachemistry Research Center, CNR, Bari (Italy); Namkoong, G.; Doolittle, W.A.; Brown, A.S. [Georgia Inst. of Tech., Atlanta (United States). School of Electrical and Computer Engineering, Microelectronic Research Center

    2002-03-16

    GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cleaning and nitridation, buffer growth, its subsequent annealing and epilayer growth was used. In order to achieve a better understanding of the GaN growth, in-situ real time investigation of the surface chemistry is performed for all the steps using the conventional reflection high-energy electron spectroscopy (RHEED) during the MBE process, while laser reflectance interferometry (LRI) and spectroscopic ellipsometry (SE), which do not require UHV conditions, are used for the monitoring of the RP-MOCVD process. The chemistry of the rf N{sub 2} plasma sapphire nitridation and its effect on the epilayer growth and quality are discussed in both MBE and RP-MOCVD. (orig.)

  4. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  5. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

    Science.gov (United States)

    Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

    2017-07-21

    The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  6. Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

    Science.gov (United States)

    Xu, X.; Armitage, R.; Shinkai, Satoko; Sasaki, Katsutaka; Kisielowski, C.; Weber, E. R.

    2005-05-01

    Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN /HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.

  7. Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

    International Nuclear Information System (INIS)

    Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

    2008-01-01

    We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

  8. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  9. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    Science.gov (United States)

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  10. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  11. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    International Nuclear Information System (INIS)

    Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

    2005-01-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

  12. Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

    International Nuclear Information System (INIS)

    Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

    2004-01-01

    The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

    Science.gov (United States)

    Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

    2018-03-01

    We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

  14. Low-Temperature Preparation of Tungsten Oxide Anode Buffer Layer via Ultrasonic Spray Pyrolysis Method for Large-Area Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Ran Ji

    2017-07-01

    Full Text Available Tungsten oxide (WO3 is prepared by a low-temperature ultrasonic spray pyrolysis method in air atmosphere, and it is used as an anode buffer layer (ABL for organic solar cells (OSCs. The properties of the WO3 transition metal oxide material as well as the mechanism of ultrasonic spray pyrolysis processes are investigated. The results show that the ultrasonic spray pyrolysized WO3 ABL exhibits low roughness, matched energy level, and high conductivity, which results in high charge transport efficiency and suppressive recombination in OSCs. As a result, compared to the OSCs based on vacuum thermal evaporated WO3, a higher power conversion efficiency of 3.63% is reached with low-temperature ultrasonic spray pyrolysized WO3 ABL. Furthermore, the mostly spray-coated OSCs with large area was fabricated, which has a power conversion efficiency of ~1%. This work significantly enhances our understanding of the preparation and application of low temperature-processed WO3, and highlights the potential of large area, all spray coated OSCs for sustainable commercial fabrication.

  15. Low-Temperature Preparation of Tungsten Oxide Anode Buffer Layer via Ultrasonic Spray Pyrolysis Method for Large-Area Organic Solar Cells.

    Science.gov (United States)

    Ji, Ran; Zheng, Ding; Zhou, Chang; Cheng, Jiang; Yu, Junsheng; Li, Lu

    2017-07-18

    Tungsten oxide (WO₃) is prepared by a low-temperature ultrasonic spray pyrolysis method in air atmosphere, and it is used as an anode buffer layer (ABL) for organic solar cells (OSCs). The properties of the WO₃ transition metal oxide material as well as the mechanism of ultrasonic spray pyrolysis processes are investigated. The results show that the ultrasonic spray pyrolysized WO₃ ABL exhibits low roughness, matched energy level, and high conductivity, which results in high charge transport efficiency and suppressive recombination in OSCs. As a result, compared to the OSCs based on vacuum thermal evaporated WO₃, a higher power conversion efficiency of 3.63% is reached with low-temperature ultrasonic spray pyrolysized WO₃ ABL. Furthermore, the mostly spray-coated OSCs with large area was fabricated, which has a power conversion efficiency of ~1%. This work significantly enhances our understanding of the preparation and application of low temperature-processed WO₃, and highlights the potential of large area, all spray coated OSCs for sustainable commercial fabrication.

  16. Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers

    International Nuclear Information System (INIS)

    Shikata, G.; Hirano, S.; Inoue, T.; Hijikata, Y.; Orihara, M.; Yaguchi, H.; Yoshida, S.

    2008-01-01

    We report on the improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy. By using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum values of the X-ray diffraction (11-20) rocking curve along the [0001]InN direction were 2870 arcsec and 3410 arcsec for a-plane InN samples grown at 500 C with and without LT-InN buffer layers, respectively. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  18. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

    Directory of Open Access Journals (Sweden)

    Chang-Ju Lee

    2017-07-01

    Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  19. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  20. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  1. Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

    Czech Academy of Sciences Publication Activity Database

    Hubáček, T.; Hospodková, Alice; Oswald, Jiří; Kuldová, Karla; Pangrác, Jiří

    2017-01-01

    Roč. 464, Apr (2017), s. 221-225 ISSN 0022-0248 R&D Projects: GA ČR GA16-11769S; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * GaN * scintillators * yellow band Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  2. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi

    2009-01-01

    A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current–voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs

  3. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-01-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr 4 beam equivalent pressure of 1.86 × 10 −7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics

  4. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  5. Control of strain in GaN by a combination of H2 and N2 carrier gases

    International Nuclear Information System (INIS)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-01-01

    We study the effect of a combination of N 2 and H 2 carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al 0.17 Ga 0.83 N multiple quantum well (MQW) structures. GaN was grown with H 2 or N 2 carrier gas (H 2 - or N 2 - GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N 2 - GaN was grown on H 2 - GaN. The total thickness was set to be 1.5 μm, and the ratio of N 2 - GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al 0.17 Ga 0.83 N MQW was much higher when the MQW was grown with N 2 on H 2 - GaN than when it was grown with H 2 on H 2 - GaN. These results were due to the achievement of control of strain in GaN using a combination of N 2 - GaN and H 2 - GaN. [copyright] 2001 American Institute of Physics

  6. Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

    International Nuclear Information System (INIS)

    Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

    2013-01-01

    SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

  7. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  8. Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

    International Nuclear Information System (INIS)

    McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

    1999-01-01

    The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

  9. Effect of SiC buffer layer on GaN growth on Si via PA-MBE

    Science.gov (United States)

    Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

    2017-11-01

    The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

  10. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

    International Nuclear Information System (INIS)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-01-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO 2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO 2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO 2 /Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0–2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p–i–n nanocolumns were fabricated on SiO 2 /Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO 2 . (paper)

  11. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

  12. Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

    International Nuclear Information System (INIS)

    Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

    2010-01-01

    Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

  13. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  14. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-01-01

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  15. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  16. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    OpenAIRE

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  17. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  18. Light effect in photoionization of traps in GaN MESFETs

    Directory of Open Access Journals (Sweden)

    H. Arabshahi

    2009-09-01

    Full Text Available Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible for current collapse in GaN MESFET at low temperatures. These electrical traps degrade the performance of the device at low temperature. On the opposite, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built in electric field associated with the trapped charge distribution. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including trapping center effects show close agreement with the available experimental data.

  19. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan, T.; Lu, C.-Y.J.; Schuber, R.; Chang, L.; Schaadt, D.M.; Chou, M.M.C.; Ploog, K.H.; Chiang, C.-M.

    2015-01-01

    Highlights: • ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10 10 cm −2 ) as compared to those grown on LiAlO 2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  20. WORKSHOP: Low temperature devices

    International Nuclear Information System (INIS)

    Anon.

    1987-01-01

    With extraterrestrial neutrinos (whether from the sun or further afield) continuing to make science news, and with the search for the so far invisible 'dark matter' of the universe a continual preoccupation, physicists from different walks of life (solid state, low temperature, particles, astrophysics) gathered at a workshop on low temperature devices for the detection of neutrinos and dark matter, held from 12-13 March at Ringberg Castle on Lake Tegernsee in the Bavarian Alps, and organized by the Max Planck Institute for Physics and Astrophysics in Munich

  1. WORKSHOP: Low temperature devices

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1987-06-15

    With extraterrestrial neutrinos (whether from the sun or further afield) continuing to make science news, and with the search for the so far invisible 'dark matter' of the universe a continual preoccupation, physicists from different walks of life (solid state, low temperature, particles, astrophysics) gathered at a workshop on low temperature devices for the detection of neutrinos and dark matter, held from 12-13 March at Ringberg Castle on Lake Tegernsee in the Bavarian Alps, and organized by the Max Planck Institute for Physics and Astrophysics in Munich.

  2. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  3. Low temperatures - hot topic

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1988-09-15

    Neutrino mass measurements, next-generation double beta experiments, solar neutrino detection, searches for magnetic monopoles and the challenge of discovering what most of the Universe is made of (dark matter), not to mention axions (cosmic and solar), supersymmetric neutral particles and cosmic neutrinos. All this physics could use cryogenic techniques. Thus the second European Workshop on Low Temperature Devices for the Detection of Low Energy Neutrinos and Dark Matter, held at LAPP (Annecy) in May, covered an active and promising field.

  4. Low temperatures - hot topic

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    Neutrino mass measurements, next-generation double beta experiments, solar neutrino detection, searches for magnetic monopoles and the challenge of discovering what most of the Universe is made of (dark matter), not to mention axions (cosmic and solar), supersymmetric neutral particles and cosmic neutrinos. All this physics could use cryogenic techniques. Thus the second European Workshop on Low Temperature Devices for the Detection of Low Energy Neutrinos and Dark Matter, held at LAPP (Annecy) in May, covered an active and promising field

  5. Low temperature carbonization

    Energy Technology Data Exchange (ETDEWEB)

    Abbott, A A

    1934-01-10

    A process is described in which coal is passed through a distillation chamber in one retort at a comparatively low temperature, then passing the coal through a distillation chamber of a second retort subjected to a higher temperature, thence passing the coal through the distillation chamber of a third retort at a still higher temperature and separately collecting the liquid and vapors produced from each retort.

  6. Sweating at low temperature

    International Nuclear Information System (INIS)

    Chalaye, H.; Launay, J.P.

    1980-11-01

    Tests of penetration liquids normally used between 10 and 40 0 C have shown that the arrangement of operationaal conditions (penetration and revealing times) was not sufficient to maintain their sensitivity below 10 0 C, thereby confirming that this temperature is a limit below which such products cannot be employed. The results achieved with a penetrant and a tracer specially devised for low temperatures (SHERWIN B 305 + D100) are satisfactory between 0 0 C and 15 0 C [fr

  7. Photoluminescence investigation of thick GaN films grown on Si substrates by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Yang, M.; Ahn, H. S.; Chang, J. H.; Yi, S. N.; Kim, K. H.; Kim, H.; Kim, S. W.

    2003-01-01

    The optical properties of thick GaN films grown by hydried vapor phase epitaxy (HVPE) using a low-temperature intermediate GaN buffer layer grown on a (111) Si substrate with a ZnO thin film were investigated by using photoluminescence (PL) measurement at 300 K and 77 K. The strong donor bound exciton (DBE) at 357 nm with a full width at half maximum (FWHM) of 15 meV was observed at 77 K. The value of 15 meV is extremely narrow for GaN grown on Si substrate by HVPE. An impurity-related peak was also observed at 367 nm. The origin of impurity was investigated using Auger spectroscopy.

  8. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Kim, Tong-Ho; Choi, Soojeong; Brown, April [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States)

    2006-05-15

    GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV-light irradiation. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Low temperature destructive distillation

    Energy Technology Data Exchange (ETDEWEB)

    1938-07-05

    A process is given and apparatus is described for the destructive distillation at low temperature of coal, oil shale, and the like by subjection to the action of a stream of hot gases or superhearted steam, flowing in a closed circuit. Subsequent treatment of the distillation residues with a gas stream containing oxygen results in combustion of the carbon-containing material therein brings to a high temperature the solid residue, in which the process comprises subsequently contacting the hot solid residue with the fluid stream effecting the distillation.

  10. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-01-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH 3 :Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH 3 :Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ∼1.0 nm over 2x2 μm 2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3x10 9 cm -2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz

  11. Low temperature distillation

    Energy Technology Data Exchange (ETDEWEB)

    Vandegrift, J N; Postel, C

    1929-04-09

    To recover gas, oil tars, and coked residues by low temperature distillation from bituminous coals, lignites, oil shales, and the like, the raw material is fed from a hopper into a rotary retort which is zonally heated, the temperature being greatest at the discharge end. The material is heated first to a relatively low temperature, thereby removing the moisture and lighter volatiles which are withdrawn through a pipe by the suction of a pump, while the higher boiling point volatiles and fixed gases are withdrawn by suction through an outlet from the higher temperature zone. The vapors withdrawn from the opposite ends of the retort pass through separate vapor lines and condensers, and the suction in each end of the retort, caused by the pumps, is controlled by valves, which also control the location of the neutral point in the retort formed by said suction. Air and inert gas may be introduced into the retort from pipe and stack respectively through a pipe, and steam may be admitted into the high temperature zone through a pipe.

  12. Low-temperature carbonization

    Energy Technology Data Exchange (ETDEWEB)

    Strankmuller, J

    1954-01-01

    The low-temperature carbonization plant at Boehlen in Eastern Germany (the first in which Lurgi type ovens were installed) worked with a throughput of 300 tons of brown-coal briquets per day per oven since 1936, later increased to 365 tons per day. The rising demand for low-temperature tar for hydrogenation purposes led to development of a modified oven of 450 tons throughput. This was achieved by stepping up the flow of the circulating gas and air mixture from 420,000 to 560,000 cubic feet per hour and by additional rows of V-shaped deflectors across the width of the oven chamber, which break up and loosen the charge, thus reducing cooling-gas pressure and allowing a greater flow of scavenging gas. The distance traversed by each briquet is nearly doubled, and the temperature gradient is less. It is claimed that the tar and the coke from modified ovens are of comparable quality. The compressive strength of the briquets was found to have an appreciable effect on the output. Better qts the chemistry, mechanism and thermodynamics of the Fischer-Tropsch reaction and aectromagnetic radiation.

  13. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  14. Low Temperature Plasma Medicine

    Science.gov (United States)

    Graves, David

    2013-10-01

    Ionized gas plasmas near room temperature are used in a remarkable number of technological applications mainly because they are extraordinarily efficient at exploiting electrical power for useful chemical and material transformations near room temperature. In this tutorial address, I will focus on the newest area of low temperature ionized gas plasmas (LTP), in this case operating under atmospheric pressure conditions, in which the temperature-sensitive material is living tissue. LTP research directed towards biomedical applications such as sterilization, surgery, wound healing and anti-cancer therapy has seen remarkable growth in the last 3-5 years, but the mechanisms responsible for the biomedical effects have remained mysterious. It is known that LTP readily create reactive oxygen species (ROS) and reactive nitrogen species (RNS). ROS and RNS (or RONS), in addition to a suite of other radical and non-radical reactive species, are essential actors in an important sub-field of aerobic biology termed ``redox'' (or oxidation-reduction) biology. I will review the evidence suggesting that RONS generated by plasmas are responsible for their observed therapeutic effects. Other possible bio-active mechanisms include electric fields, charges and photons. It is common in LTP applications that synergies between different mechanisms can play a role and I will review the evidence for synergies in plasma biomedicine. Finally, I will address the challenges and opportunities for plasma physicists to enter this novel, multidisciplinary field.

  15. Low-Temperature Supercapacitors

    Science.gov (United States)

    Brandon, Erik J.; West, William C.; Smart, Marshall C.

    2008-01-01

    An effort to extend the low-temperature operational limit of supercapacitors is currently underway. At present, commercially available non-aqueous supercapacitors are rated for a minimum operating temperature of -40 C. A capability to operate at lower temperatures would be desirable for delivering power to systems that must operate in outer space or in the Polar Regions on Earth. Supercapacitors (also known as double-layer or electrochemical capacitors) offer a high power density (>1,000 W/kg) and moderate energy density (about 5 to 10 Wh/kg) technology for storing energy and delivering power. This combination of properties enables delivery of large currents for pulsed applications, or alternatively, smaller currents for low duty cycle applications. The mechanism of storage of electric charge in a supercapacitor -- at the electrical double-layer formed at a solid-electrode/liquid-electrolyte interface -- differs from that of a primary or secondary electrochemical cell (i.e., a battery) in such a manner as to impart a long cycle life (typically >10(exp 6) charge/discharge cycles).

  16. Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

    Energy Technology Data Exchange (ETDEWEB)

    Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

    2011-07-01

    A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

  17. Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

    International Nuclear Information System (INIS)

    Kusakabe, K.; Furuzuki, T.; Ohkawa, K.

    2006-01-01

    Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220cm 2 /Vs was recorded at the carrier density of 1.1x10 18 cm -3 . Temperature dependence of electrical property revealed that the peak mobility of 234cm 2 /Vs was obtained at 249K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11meV

  18. Low-temperature thermal expansion

    International Nuclear Information System (INIS)

    Collings, E.W.

    1986-01-01

    This chapter discusses the thermal expansion of insulators and metals. Harmonicity and anharmonicity in thermal expansion are examined. The electronic, magnetic, an other contributions to low temperature thermal expansion are analyzed. The thermodynamics of the Debye isotropic continuum, the lattice-dynamical approach, and the thermal expansion of metals are discussed. Relative linear expansion at low temperatures is reviewed and further calculations of the electronic thermal expansion coefficient are given. Thermal expansions are given for Cu, Al and Ti. Phenomenologic thermodynamic relationships are also discussed

  19. Vol. 5: Low Temperature Physics

    International Nuclear Information System (INIS)

    Sitenko, A.

    1993-01-01

    Problems of modern physics and the situation with physical research in Ukraine are considered. Programme of the conference includes scientific and general problems. Its proceeding are published in 6 volumes. The papers presented in this volume refer to low-temperature physics

  20. Certification testing at low temperatures

    International Nuclear Information System (INIS)

    Noss, P.W.; Ammerman, D.J.

    2004-01-01

    Regulations governing the transport of radioactive materials require that most hypothetical accident condition tests or analyses consider the effects of the environmental temperature that most challenges package performance. For many packages, the most challenging temperature environment is the cold condition (-29 C according to U.S. regulations), primarily because the low temperature causes the highest free drop impact forces due to the higher strength of many energy-absorbing materials at this temperature. If it is decided to perform low temperature testing, it is only necessary that the relevant parts of the package have the required temperature prior to the drop. However, the details of performing a drop at low temperature can have a large influence on testing cost and technical effectiveness. The selection of the test site, the chamber and type of chilling equipment, instrumentation, and even the time of year are all important. Control of seemingly minor details such as the effect on internal pressure, placement of monitoring thermocouples, the thermal time constant of the test article, and icing of equipment are necessary to ensure a successful low temperature test. This paper will discuss these issues and offer suggestions based on recent experience

  1. Science with low temperature detectors

    International Nuclear Information System (INIS)

    Sadoulet, B.; Lawrence Berkeley National Lab., CA; California Univ., Berkeley

    1996-01-01

    The novel technique of particle detection with low temperature detectors opens a number of new scientific opportunities. We review some of these, focusing on three generic applications: far infrared bolometry taking as an example the cosmic microwave background, X-ray spectroscopy for astrophysics and biological applications, and massive calorimeters for dark matter searches and neutrino physics. (orig.)

  2. Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing

    International Nuclear Information System (INIS)

    Pan, H.-C.; Chou, C.-C.; Tsai, H.-L.

    2003-01-01

    Fabrication of well-crystallized sol-gel derived (La 0.5 Sr 0.5 )MnO 3 (LSMO) buffer electrode layers and ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films using a continuous wave CO 2 laser annealing technique at a relatively low temperature was studied on a Pt/Ti/SiO 2 /Si substrate. Resistivity, carrier concentration and Hall mobility of laser-annealed conducting oxide LSMO films were optimized by changing the radiation fluence and the substrate temperature. The minimum resistivity of 1.27x10 -4 Ω cm was obtained for LSMO/Pt(Si) films prepared by laser irradiating at a fluence of 533 W/cm 2 with a simultaneous substrate heating at a temperature of 300 deg. C. The laser-annealed PZT films coated on LSMO/Pt(Si) substrate shows enhancement in remanent polarization from 10.1 to 17.3 μC/cm 2 as the PZT irradiated with a laser fluence of 433-483 W/cm 2 . The PZT(483 W/cm 2 )/LSMO(533 W/cm 2 )/Pt(Si) films showed a good fatigue resistance after 1x10 10 switching cycles with a bipolar electric field of 300 kV/cm, implying the feasibility of fabricating reliable ferroelectric-oxide electrode heterostructures using CO 2 laser annealing at temperatures lower than 400 deg. C

  3. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

    Science.gov (United States)

    Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

    2015-03-17

    This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

  4. Automatic low-temperature calorimeter

    International Nuclear Information System (INIS)

    Malyshev, V.M.; Mil'ner, G.A.; Shibakin, V.F.; Sorkin, E.L.

    1986-01-01

    This paper describes a low-temperature adiabatic calorimeter with a range of 1.5-500K. The system for maintaining adiabatic conditions is implemented by two resitance thermometers, whose sensitivity at low temperatures is several orders higher than that of thermocouples. The calorimeter cryostat is installed in an STG-40 portable Dewar flask. The calorimeter is controlled by an Elektronika-60 microcomputer. Standard platinum and germanium thermometers were placed inside of the calorimeter to calibrate the thermometers of the calorimeter and the shield, and the specific heats of specimens of OSCh 11-4 copper and KTP-8 paste were measured to demonstrate the possibilities of the described calorimeter. Experience with the calorimeter has shown that a thorough study of the dependence of heat capacity on temperature (over 100 points for one specimen) can be performed in one or two dats

  5. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    International Nuclear Information System (INIS)

    Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

    2015-01-01

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  6. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

    2015-08-30

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  7. Thermoluminescent system for low temperatures

    International Nuclear Information System (INIS)

    Rosa, L.A.R. da; Caldas, L.V.E.; Leite, N.G.

    1988-09-01

    A system for measurements of the thermoluminescent glow curve, the thermoluminescent emission spectrum and the optical absorption spectrum of solid samples, from liquid nitrogen temperature up to 473 K, is reported. A specially designed temperature programmer provides a linear heating of the sample at a wide range of selectable heating rates, as also long term steady-state temperatures for annealing and isothermal decay studies. The system operates at a pressure of 1.33 x 10 -3 Pa. Presently it is being used for lithium fluoride low temperature thermoluminescent studies. (author) [pt

  8. Mechanical pumping at low temperature

    International Nuclear Information System (INIS)

    Perin, J.P.; Claudet, G.; Disdier, F.

    1995-01-01

    This novel concept consist of a mechanical pump able to run at low temperature (25K). Since gas density varies inversely with temperature, this pump would deliver much higher mass flow rate than at room temperature for a given size. Advantages of this concept are order of magnitude reduction in size, weight, when compared to a conventional pump scaled to perform the same mass flow rate at room temperature. This pump would be a solution to allow continuously tritium extraction and minimize the mass inventory. (orig.)

  9. Ammonia synthesis at low temperatures

    DEFF Research Database (Denmark)

    Rod, Thomas Holm; Logadottir, Ashildur; Nørskov, Jens Kehlet

    2000-01-01

    have been carried out to evaluate its feasibility. The calculations suggest that it might be possible to catalytically produce ammonia from molecular nitrogen at low temperatures and pressures, in particular if energy is fed into the process electrochemically. (C) 2000 American Institute of Physics.......Density functional theory (DFT) calculations of reaction paths and energies for the industrial and the biological catalytic ammonia synthesis processes are compared. The industrial catalyst is modeled by a ruthenium surface, while the active part of the enzyme is modeled by a MoFe6S9 complex...

  10. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Science.gov (United States)

    Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

    2015-10-01

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

  11. Wolte 5. low temperature electronics

    International Nuclear Information System (INIS)

    Balestra, F.; Dieudonne, F.; Jomaah, J.

    2002-01-01

    This book present the latest research and development results in advanced materials, technologies, devices, circuits and systems for low temperature electronics. The main themes of the papers are ranging from physics and fundamental aspects, modeling and simulation, to device and circuit design. The topics include advanced process and characterization, novel devices and cryogenic instrumentation. The papers are divided into nine sections, reflecting the main research efforts in different areas: i) deep submicron silicon MOSFETs, ii) alternative MOSFETs (SOI, innovating device architectures), iii) III-V devices, iv) other semiconductor devices (Ge devices, p-n junctions, IR sensors, semiconductor microcrystals), v) emerging devices and phenomena (nano Si-based devices, conduction and fluctuations mechanisms), vi) superconducting materials, vii) superconducting detectors, viii) superconducting devices and circuits (RSFQ, SIS mixers, metal-superconducting-semiconductor structures), ix) low temperature electronics for space applications. Six invited papers presented by internationally recognized authors, and 39 contributed papers are presented. The invited papers provide an excellent overview of today's status and progress, as well as tomorrow's challenges and trends in this important discipline for many cryogenic applications. (authors)

  12. The Low temperature CFB gasifier

    DEFF Research Database (Denmark)

    Stoholm, P.; Nielsen, Rasmus Glar; Fock, Martin W.

    2003-01-01

    %) particle separation by the hot secondary cyclone. The next LT-CFB experiment, currently under preparation, is expected to be on either municipal/industrial waste or animal manure. Eventually a 500 kW LT-CFB test plant scheduled for commission during summer 2003, and the anticipated primary LT......The Low Temperature Circulating Fluidised Bed (LT-CFB) gasification process aims at avoiding problems due to ash deposition and agglomeration when using difficult fuels such as agricultural biomass and many waste materials. This, as well as very simple gas cleaning, is achieved by pyrolysing...... the fuel at around 650?C in a CFB reaction chamber and subsequently gasifying the char at around 730oC in a slowly fluidised bubbling bed chamber located in the CFB particle recirculation path. In this paper the novel LT-CFB concept is further described together with the latest test results from the 50 k...

  13. Low Temperature Hydrogen Antihydrogen Interactions

    International Nuclear Information System (INIS)

    Armour, E. A. G.; Chamberlain, C. W.

    2001-01-01

    In view of current interest in the trapping of antihydrogen (H-bar) atoms at low temperatures, we have carried out a full four-body variational calculation to determine s-wave elastic phase shifts for hydrogen antihydrogen scattering, using the Kohn Variational Principle. Terms outside the Born-Oppenheimer approximation have been taken into account using the formalism of Kolos and Wolniewicz. As far as we are aware, this is the first time that these terms have been included in an H H-bar scattering calculation. This is a continuation of earlier work on H-H-bar interactions. Preliminary results differ substantially from those calculated using the Born-Oppenheimer approximation. A method is outlined for reducing this discrepancy and taking the rearrangement channel into account.

  14. Mechanical pumping at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Perin, J.P.; Claudet, G.; Disdier, F.

    1994-12-31

    This new concept consists of a mechanical pump able to run at low temperature (25 K). Since gas density varies inversely with temperature, the pump could deliver much higher mass flow rate than at room temperature for a given size. Advantages of this concept are reduction of an order of magnitude in size and weight when compared to a conventional pump scaled to perform the same mass flow rate at room temperature. Results obtained at 80 K and 25 K with a Holweck type molecular drag pump of 100 mm diameter and with few stages of a turbomolecular pump running at the same temperatures, are given. This pump would be a solution to allow continuous tritium extraction and minimize the mass inventory for the ITER (International Tokamak Experiment Reactor). 5 figs., 2 tabs., 4 refs.

  15. The Low Temperature Microgravity Physics Facility Project

    Science.gov (United States)

    Chui, T.; Holmes, W.; Lai, A.; Croonquist, A.; Eraker, J.; Abbott, R.; Mills, G.; Mohl, J.; Craig, J.; Balachandra, B.; hide

    2000-01-01

    We describe the design and development of the Low Temperature Microgravity Physics Facility, which is intended to provide a unique environment of low temperature and microgravity for the scientists to perform breakthrough investigations on board the International Space Station.

  16. The Low Temperature CFB Gasifier

    DEFF Research Database (Denmark)

    Stoholm, P.; Nielsen, Rasmus Glar; Richardt, K.

    2004-01-01

    straw, animal manure and waste and for co-firing the product gas in existing, e.g. coal fired power plant boilers. The aim is to prevent fouling, agglomeration and high temperature corrosion caused by potassium and chlorine and other fuel components when producing electricity. So far 92 hours......The Low Temperature Circulating Fluidised Bed (LT-CFB) gasification process is described together with the 50 kW and the 500 kW test plants and latest test results. The LT-CFB process is especially developed for medium and large scale (few to >100 MW) gasification of problematic bio-fuels like...... of experiments with the 50 kW test plant with two extremely difficult types of straw has shown low char losses and high retentions of ash including e.g. potassium. Latest 27 hours of experiments with dried, high ash pig- and hen manure has further indicated the concepts high fuel flexibility. The new 500 kW test...

  17. Low-temperature nuclear orientation

    International Nuclear Information System (INIS)

    Stone, N.J.; Postma, H.

    1986-01-01

    This book comprehensively surveys the many aspects of the low temperature nuclear orientation method. The angular distribution of radioactive emissions from nuclei oriented by hyperfine interactions in solids, is treated experimentally and theoretically. A general introductory chapter is followed by formal development of the theory of the orientation process and the anisotropic emission of decay products from oriented nuclei, applied to radioactive decay and to reactions. Five chapters on applications to nuclear physics cover experimental studies of alpha, beta and gamma emission, nuclear moment measurement and level structure information. Nuclear orientation studies of parity non-conservation and time reversal asymmetry are fully described. Seven chapters cover aspects of hyperfine interactions, magnetic and electric, in metals, alloys and insulating crystals, including ordered systems. Relaxation phenomena and the combined technique of NMR detection using oriented nuclei are treated at length. Chapters on the major recent development of on-line facilities, giving access to short lived nuclei far from stability, on the use of nuclear orientation for thermometry below 1 Kelvin and on technical aspects of the method complete the main text. Extensive appendices, table of relevant parameters and over 1000 references are included to assist the design of future experiments. (Auth.)

  18. LOW TEMPERATURE CATHODE SUPPORTED ELECTROLYTES

    Energy Technology Data Exchange (ETDEWEB)

    Harlan U. Anderson

    2000-03-31

    This project has three main goals: Thin Films Studies, Preparation of Graded Porous Substrates and Basic Electrical Characterization and Testing of Planar Single Cells. During this time period substantial progress has been made in developing low temperature deposition techniques to produce dense, nanocrystalline yttrium-stabilized zirconia films on both dense oxide and polymer substrates. Progress has been made in the preparation and characterization of thin electrolytes and porous LSM substrates. Both of these tasks are essentially on or ahead of schedule. In our proposal, we suggested that the ZrO{sub 2}/Sc system needed to be considered as a candidate as a thin electrolyte. This was because microcrystalline ZrO{sub 2}/Sc has a significantly higher ionic conductivity than YSZ, particularly at the lower temperatures. As a result, some 0.5 micron thick film of ZrO{sub 2}/16% Sc on an alumina substrate (grain size 20nm) was prepared and the electrical conductivity measured as a function of temperature and oxygen activity. The Sc doped ZrO{sub 2} certainly has a higher conductivity that either 20nm or 2400nm YSZ, however, electronic conductivity dominates the conductivity for oxygen activities below 10{sup -15}. Whereas for YSZ, electronic conductivity is not a problem until the oxygen activity decreases below 10{sup -25}. These initial results show that the ionic conductivity of 20nm YSZ and 20nm ZrO{sub 2}/16% Sc are essentially the same and the enhanced conductivity which is observed for Sc doping in microcrystalline specimens is not observed for the same composition when it is nanocrystalline. In addition they show that the electronic conductivity of Sc doped ZrO{sub 2} is at least two orders of magnitude higher than that observed for YSZ. The conclusion one reaches is that for 0.5 to 1 micron thick nanocrystalline films, Sc doping of ZrO{sub 2} has no benefits compared to YSZ. As a result, electrolyte films of ZrO{sub 2}/Sc should not be considered as candidates

  19. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

    International Nuclear Information System (INIS)

    Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

    2015-01-01

    A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

  20. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

    Energy Technology Data Exchange (ETDEWEB)

    Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

    2000-07-01

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

  1. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  2. Low temperature study of nonstoichiometric titanium carbide

    International Nuclear Information System (INIS)

    Tashmetov, M.Yu.

    2005-05-01

    By low temperature neutron diffraction method was studied structure in nonstoichiometric titanium carbide from room temperature up to 12K. It is found of low temperature phase in titanium carbide- TiC 0.71 . It is established region and borders of this phase. It is determined change of unit cell parameter. (author)

  3. Low-temperature plasma modelling and simulation

    NARCIS (Netherlands)

    Dijk, van J.

    2011-01-01

    Since its inception in the beginning of the twentieth century, low-temperature plasma science has become a major ¿eld of science. Low-temperature plasma sources and gas discharges are found in domestic, industrial, atmospheric and extra-terrestrial settings. Examples of domestic discharges are those

  4. Thermal conductivity at very low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Locatelli, M [CEA Centre d' Etudes Nucleaires de Grenoble, 38 (France). Service des Basses Temperatures

    1976-06-01

    The interest of low and very low temperatures in solid physics and especially that of thermal measurements is briefly mentioned. Some notes on the thermal conductivity of dielectrics, the method and apparatus used to measure this property at very low temperatures (T<1.5K) and some recent results of fundamental and applied research are then presented.

  5. The origin of the residual conductivity of GaN films on ferroelectric materials

    Science.gov (United States)

    Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

    2009-08-01

    In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

  6. Extremely low temperature properties of epoxy GFRP

    International Nuclear Information System (INIS)

    Kadotani, Kenzo; Nagai, Matao; Aki, Fumitake.

    1983-01-01

    The examination of fiber-reinforced plastics, that is, plastics such as epoxy, polyester and polyimide reinforced with high strength fibers such as glass, carbon, boron and steel, for extremely low temperature use began from the fuel tanks of rockets. Therafter, the trial manufacture of superconducting generators and extremely low temperature transformers and the manufacture of superconducting magnets for nuclear fusion experimental setups became active, and high performance FRPs have been adopted, of which the extremely low temperature properties have been sufficiently grasped. Recently, the cryostats made of FRPs have been developed, fully utilizing such features of FRPs as high strength, high rigidity, non-magnetic material, insulation, low heat conductivity, light weight and the freedom of molding. In this paper, the mechanical properties at extremely low temperature of the plastic composite materials used as insulators and structural materials for extremely low temperature superconducting equipment is outlined, and in particular, glass fiber-reinforced epoxy laminates are described somewhat in detail. The fracture strain of GFRP at extremely low temperature is about 1.3 times as large as that at room temperature, but at extremely low temperature, clear cracking occurred at 40% of the fracture strain. The linear thermal contraction of GFRP showed remarkable anisotropy. (Kako, I.)

  7. Improved Low Temperature Performance of Supercapacitors

    Science.gov (United States)

    Brandon, Erik J.; West, William C.; Smart, Marshall C.; Gnanaraj, Joe

    2013-01-01

    Low temperature double-layer capacitor operation enabled by: - Base acetonitrile / TEATFB salt formulation - Addition of low melting point formates, esters and cyclic ethers center dot Key electrolyte design factors: - Volume of co-solvent - Concentration of salt center dot Capacity increased through higher capacity electrodes: - Zeolite templated carbons - Asymmetric cell designs center dot Continuing efforts - Improve asymmetric cell performance at low temperature - Cycle life testing Motivation center dot Benchmark performance of commercial cells center dot Approaches for designing low temperature systems - Symmetric cells (activated carbon electrodes) - Symmetric cells (zeolite templated carbon electrodes) - Asymmetric cells (lithium titanate/activated carbon electrodes) center dot Experimental results center dot Summary

  8. Analysis of low-temperature tar fractions

    Energy Technology Data Exchange (ETDEWEB)

    Kikkawa, S; Yamada, F

    1952-01-01

    A preliminary comparative study was made on the applicability of the methods commonly used for the type analysis of petroleum products to the low-temperature tar fractions. The usability of chromatography was also studied.

  9. Low temperature plasma technology methods and applications

    CERN Document Server

    Chu, Paul K

    2013-01-01

    Written by a team of pioneering scientists from around the world, Low Temperature Plasma Technology: Methods and Applications brings together recent technological advances and research in the rapidly growing field of low temperature plasmas. The book provides a comprehensive overview of related phenomena such as plasma bullets, plasma penetration into biofilms, discharge-mode transition of atmospheric pressure plasmas, and self-organization of microdischarges. It describes relevant technology and diagnostics, including nanosecond pulsed discharge, cavity ringdown spectroscopy, and laser-induce

  10. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  11. Structure guided GANs

    Science.gov (United States)

    Cao, Feidao; Zhao, Huaici; Liu, Pengfei

    2017-11-01

    Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

  12. Minimizing material damage using low temperature irradiation

    International Nuclear Information System (INIS)

    Craven, E.; Hasanain, F.; Winters, M.

    2012-01-01

    Scientific advancements in healthcare driven both by technological breakthroughs and an aging and increasingly obese population have lead to a changing medical device market. Complex products and devices are being developed to meet the demands of leading edge medical procedures. Specialized materials in these medical devices, including pharmaceuticals and biologics as well as exotic polymers present a challenge for radiation sterilization as many of these components cannot withstand conventional irradiation methods. The irradiation of materials at dry ice temperatures has emerged as a technique that can be used to decrease the radiation sensitivity of materials. The purpose of this study is to examine the effect of low temperature irradiation on a variety of polymer materials, and over a range of temperatures from 0 °C down to −80 °C. The effectiveness of microbial kill is also investigated under each of these conditions. The results of the study show that the effect of low temperature irradiation is material dependent and can alter the balance between crosslinking and chain scission of the polymer. Low temperatures also increase the dose required to achieve an equivalent microbiological kill, therefore dose setting exercises must be performed under the environmental conditions of use. - Highlights: ► A study is performed to quantify low temperature irradiation effects on polymer materials and BIs. ► Low temperature irradiation alters the balance of cross-linking and chain scissoning in polymers. ► Low temperatures provide radioprotection for BIs. ► Benefits of low temperatures are application specific and must be considered when dose setting.

  13. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  14. Interaction of GaN epitaxial layers with atomic hydrogen

    International Nuclear Information System (INIS)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

    2004-01-01

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

  15. Basics of Low-temperature Refrigeration

    CERN Document Server

    Alekseev, A.

    2014-07-17

    This chapter gives an overview of the principles of low temperature refrigeration and the thermodynamics behind it. Basic cryogenic processes - Joule-Thomoson process, Brayton process as well as Claude process - are described and compared. A typical helium laboratory refrigerator based on Claude process is used as a typical example of a low-temperature refrigeration system. A description of the hardware components for helium liquefaction is an important part of this paper, because the design of the main hardware components (compressors, turbines, heat exchangers, pumps, adsorbers, etc.) provides the input for cost calculation, as well as enables to estimate the reliability of the plant and the maintenance expenses. All these numbers are necessary to calculate the economics of a low temperature application.

  16. Kinetics and spectroscopy of low temperature plasmas

    CERN Document Server

    Loureiro, Jorge

    2016-01-01

    This is a comprehensive textbook designed for graduate and advanced undergraduate students. Both authors rely on more than 20 years of teaching experience in renowned Physics Engineering courses to write this book addressing the students’ needs. Kinetics and Spectroscopy of Low Temperature Plasmas derives in a full self-consistent way the electron kinetic theory used to describe low temperature plasmas created in the laboratory with an electrical discharge, and presents the main optical spectroscopic diagnostics used to characterize such plasmas. The chapters with the theoretical contents make use of a deductive approach in which the electron kinetic theory applied to plasmas with basis on the electron Boltzmann equation is derived from the basic concepts of Statistical and Plasma Physics. On the other hand, the main optical spectroscopy diagnostics used to characterize experimentally such plasmas are presented and justified from the point of view of the Atomic and Molecular Physics. Low temperature plasmas...

  17. Basics of Low-temperature Refrigeration

    Energy Technology Data Exchange (ETDEWEB)

    Alekseev, A [Linde AG, Munich (Germany)

    2014-07-01

    This chapter gives an overview of the principles of low temperature refrigeration and the thermodynamics behind it. Basic cryogenic processes - Joule-Thomoson process, Brayton process as well as Claude process - are described and compared. A typical helium laboratory refrigerator based on Claude process is used as a typical example of a low-temperature refrigeration system. A description of the hardware components for helium liquefaction is an important part of this paper, because the design of the main hardware components (compressors, turbines, heat exchangers, pumps, adsorbers, etc.) provides the input for cost calculation, as well as enables to estimate the reliability of the plant and the maintenance expenses. All these numbers are necessary to calculate the economics of a low temperature application.

  18. Z L GAN

    Indian Academy of Sciences (India)

    Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

  19. Low temperature monitoring system for subsurface barriers

    Science.gov (United States)

    Vinegar, Harold J [Bellaire, TX; McKinzie, II Billy John [Houston, TX

    2009-08-18

    A system for monitoring temperature of a subsurface low temperature zone is described. The system includes a plurality of freeze wells configured to form the low temperature zone, one or more lasers, and a fiber optic cable coupled to at least one laser. A portion of the fiber optic cable is positioned in at least one freeze well. At least one laser is configured to transmit light pulses into a first end of the fiber optic cable. An analyzer is coupled to the fiber optic cable. The analyzer is configured to receive return signals from the light pulses.

  20. Materials for low-temperature fuel cells

    CERN Document Server

    Ladewig, Bradley; Yan, Yushan; Lu, Max

    2014-01-01

    There are a large number of books available on fuel cells; however, the majority are on specific types of fuel cells such as solid oxide fuel cells, proton exchange membrane fuel cells, or on specific technical aspects of fuel cells, e.g., the system or stack engineering. Thus, there is a need for a book focused on materials requirements in fuel cells. Key Materials in Low-Temperature Fuel Cells is a concise source of the most important and key materials and catalysts in low-temperature fuel cells. A related book will cover key materials in high-temperature fuel cells. The two books form part

  1. Low-temperature carbonization plant for lignite

    Energy Technology Data Exchange (ETDEWEB)

    Shiotsuki, Y

    1949-01-01

    The design and operational data of a low-temperature carbonization plant for Japanese lignite are described. The retort had a vertical cylinder with a capacity of about 10 tons per day. By continuous operation, in which a part of the gas produced was circulated and burned in the lignite zone, about 40 percent semicoke and 3 to 4 percent tar were obtained. From the tar the following products were separated: Low-temperature carbonization cresol, 18.3; motor fuel, 1.00; solvent, 9.97; cresol for medical uses, 11.85; and creosote oil, 32 percent.

  2. Magnetic resonance studies of atomic hydrogen gas at low temperatures

    International Nuclear Information System (INIS)

    Hardy, W.N.; Morrow, M.; Jochemsen, R.; Statt, B.W.; Kubik, P.R.; Marsolais, R.M.; Berlinsky, A.J.; Landesman, A.

    1980-01-01

    Using a pulsed low temperature discharge in a closed cell containing H 2 and 4 He, we have been able to store a low density (approximately 10 12 atoms/cc) gas of atomic hydrogen for periods of order one hour in zero magnetic field and T=1 K. Pulsed magnetic resonance at the 1420 MHz hyperfine transition has been used to study a number of the properties of the gas, including the recombination rate H + H + 4 He→H 2 + 4 He, the hydrogen spin-exchange relaxation rates, the diffusion coefficient of H in 4 He gas and the pressure shift of the hyperfine frequency due to the 4 He buffer gas. Here we discuss the application of hyperfine frequency shifts as a probe of the H-He potential, and as a means for determining the binding energy of H on liquid helium

  3. Low temperature thermophysical properties of lunar soil

    Science.gov (United States)

    Cremers, C. J.

    1973-01-01

    The thermal conductivity and thermal diffusivity of lunar fines samples from the Apollo 11 and Apollo 12 missions, determined at low temperatures as a function of temperature and various densities, are reviewed. It is shown that the thermal conductivity of lunar soil is nearly the same as that of terrestrial basaltic rock under the same temperature and pressure conditions.

  4. Neutrinos, dark matter and low temperature detectors

    International Nuclear Information System (INIS)

    Gonzalez-Mestres, L.; Perret-Gallix, D.

    1988-01-01

    The present status of cryogenic detector developments for particle physics is discussed, with emphasis on applications at the cross-disciplinary frontier between particle physics and astrophysics, where low temperature devices appear to be particularly well suited. The overwiew of results is completed by a sketch of new ideas and possible ways for further improvements. Neutrino role importance is particularly shown

  5. Low Temperature Cure Powder Coatings (LTCPC)

    Science.gov (United States)

    2010-10-01

    Dr. Glen Merfeld, General Electric Global Research evaluated and optimized the formulation, and cure and performance parameters of candidate LTCPC...Unacceptable test result = Marginal test result = Acceptable test result 80 therefore suffer from brittleness at extremely low temperatures. NASA’s

  6. Industrial Applications of Low Temperature Plasmas

    International Nuclear Information System (INIS)

    Bardsley, J N

    2001-01-01

    The use of low temperature plasmas in industry is illustrated by the discussion of four applications, to lighting, displays, semiconductor manufacturing and pollution control. The type of plasma required for each application is described and typical materials are identified. The need to understand radical formation, ionization and metastable excitation within the discharge and the importance of surface reactions are stressed

  7. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  8. Arc generators of low-temperature plasma

    International Nuclear Information System (INIS)

    Krolikowski, Cz.; Niewiedzial, R.; Siwiec, J.

    1979-01-01

    This paper is a review of works concerning investigation and use of low-temperature plasma in arc plasma generators made in Electric Power Institute of PP. There are discussed: analytical approach to a problem of volt-current and operational characteristics of DC arc plasma generators, determination of limits of their stable work and possibilities of their use to technological aims. (author)

  9. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    Science.gov (United States)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  10. Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E

    2002-11-01

    Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H{sub 2} into the reaction.

  11. Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

    International Nuclear Information System (INIS)

    Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E.

    2002-01-01

    Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H 2 into the reaction

  12. Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

    International Nuclear Information System (INIS)

    Graham, David E.; Moon, Ji-Won; Armstrong, Beth L.; Datskos, Panos G.; Duty, Chad E.; Gresback, Ryan; Ivanov, Ilia N.; Jacobs, Christopher B.; Jellison, Gerald Earle; Jang, Gyoung Gug; Joshi, Pooran C.; Jung, Hyunsung; Meyer, Harry M.; Phelps, Tommy

    2015-01-01

    The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

  13. Low temperature experiments in radiation biophysics

    International Nuclear Information System (INIS)

    Moan, J.

    1977-01-01

    The reasons for performing experiments in radiation biophysics at low temperatures, whereby electron spectra may be studied, are explained. The phenomenon of phosphorescence spectra observed in frozen aqueous solutions of tryptophan and adenosine is also described. Free radicals play an important part in biological radiation effects and may be studied by ESR spectroscopy. An ESR spectrum of T 1 bacteriophages irradiated dry at 130K is illustrated and discussed. Hydrogen atoms, which give lines on the spectrum, are believed to be those radiation products causing most biological damage in a dry system. Low temperature experiments are of great help in explaining the significance of direct and indirect effects. This is illustrated for the case of trypsin. (JIW)

  14. Dehydration of hydrated low-temperature tar

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, T

    1949-01-01

    Yoshida examined the mechanism of the dehydration of hydrated low-temperature tar with a microscope. The tar containing free carbon and coal dust is so stable that the removal of the above substances and water by a physical method is very difficult. Addition of light oil produced by fractionation of low-temperature tar facilitates the operations. Yoshida tried using the separate acid, neutral, and basic components of the light oil; the acid oil proved to be most effective. For many reasons it is convenient to use light oil as it is. In this method the quantity of light oil required is 2 to 3 times that of tar. But in supplementing the centrifugal method, the quantity of light oil needed might be only half the amount of tar.

  15. Technological uses of low temperature plasmas

    International Nuclear Information System (INIS)

    Lawton, J.

    1975-01-01

    Types of low temperature plasma sources considered include; arc discharge, high pressure discharge, low pressure discharge and flame. The problems of uniform heating of a gas are discussed and it is considered that the most reliable technique is the magnetically rotated arc, but expanded discharges of one kind or another are likely to be serious competitors in the future. The uses of low temperature plasma in chemistry and combustion are considered. The potential for plasma chemistry lies with processes in which the reactions occur in the plasma itself or its neighbouring gas phase, including those which require the vaporization of liquefaction of a refractory material and also highly endothermic reactions. The production of thixotropic silica and acetylene are discussed as examples of such reactions. The field of plasma and combustion including; ignition, flame ionization and soot formation, and the MHD generator, is considered. (U.K.)

  16. Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graham, David E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moon, Ji-Won [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Beth L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Datskos, Panos G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Duty, Chad E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gresback, Ryan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ivanov, Ilia N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jacobs, Christopher B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jellison, Gerald Earle [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jang, Gyoung Gug [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Joshi, Pooran C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jung, Hyunsung [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Meyer, III, Harry M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Phelps, Tommy [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-06-30

    The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

  17. Behaviour of polar crystals at low temperatures

    International Nuclear Information System (INIS)

    Drozhdin, S.N.; Novik, V.K.; Gavrilova, N.D.; Koptsik, V.A.; Popova, T.V.

    1975-01-01

    Temperature dependencies of pyrocoefficient for a wide class of various pyroactive crystals in the temperature range from 4,2 to 300 deg K were investigated. The problems to be solved were: to confirm a conclusion on the pyrocoefficient γsup(sigma) tending to zero at T → 0; to compare experimental data with conclusions of existing theories; to reveal specific features in the behaviour of both linear pyroelectrics and segnetoelectrics at low temperatures. The behaviour of the total pyrocoefficient for all crystals obeys the regularity γsup(sigma) → 0 at T → O. In the range of low temperatures the pyrocoefficient varies by the power law: γsup(sigma) approximately Tsup(α). For the majority of crystals studied α is close to 3. CdS, BeO, ZiNbO 3 and other crystals were studied

  18. Low-temperature conductivity of gadolinium sulfides

    Energy Technology Data Exchange (ETDEWEB)

    Mustafaeva, S. N., E-mail: solmust@gmail.com [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Asadov, S. M., E-mail: mirasadov@gmail.com [Azerbaijan National Academy of Sciences, Institute of Catalysis and Inorganic Chemistry (Azerbaijan)

    2016-09-15

    In samples of GdS{sub x} (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdS{sub x} phases is established. The parameters of localized states in GdS{sub x} are determined.

  19. Thermodynamic power stations at low temperatures

    Science.gov (United States)

    Malherbe, J.; Ployart, R.; Alleau, T.; Bandelier, P.; Lauro, F.

    The development of low-temperature thermodynamic power stations using solar energy is considered, with special attention given to the choice of the thermodynamic cycle (Rankine), working fluids (frigorific halogen compounds), and heat exchangers. Thermomechanical conversion machines, such as ac motors and rotating volumetric motors are discussed. A system is recommended for the use of solar energy for irrigation and pumping in remote areas. Other applications include the production of cold of fresh water from brackish waters, and energy recovery from hot springs.

  20. Crystal growth from low-temperature solutions

    International Nuclear Information System (INIS)

    Sangwal, K.

    1994-01-01

    The state of the art in crystal growth from solutions at low-temperatures has been done. The thermodynamic and kinetic parameters have been discussed in respect to different systems. The methods of crystal growth from water and organic solutions and different variants of their technical realizations have been reviewed. Also the growth by chemical reactions and gel growth have been described. The large number of examples have been shown. 21 refs, 30 figs, 3 tabs

  1. Minimizing material damage using low temperature irradiation

    Science.gov (United States)

    Craven, E.; Hasanain, F.; Winters, M.

    2012-08-01

    Scientific advancements in healthcare driven both by technological breakthroughs and an aging and increasingly obese population have lead to a changing medical device market. Complex products and devices are being developed to meet the demands of leading edge medical procedures. Specialized materials in these medical devices, including pharmaceuticals and biologics as well as exotic polymers present a challenge for radiation sterilization as many of these components cannot withstand conventional irradiation methods. The irradiation of materials at dry ice temperatures has emerged as a technique that can be used to decrease the radiation sensitivity of materials. The purpose of this study is to examine the effect of low temperature irradiation on a variety of polymer materials, and over a range of temperatures from 0 °C down to -80 °C. The effectiveness of microbial kill is also investigated under each of these conditions. The results of the study show that the effect of low temperature irradiation is material dependent and can alter the balance between crosslinking and chain scission of the polymer. Low temperatures also increase the dose required to achieve an equivalent microbiological kill, therefore dose setting exercises must be performed under the environmental conditions of use.

  2. Computational Chemistry of Cyclopentane Low Temperature Oxidation

    KAUST Repository

    El Rachidi, Mariam

    2015-03-30

    Cycloalkanes are significant constituents of conventional fossil fuels, but little is known concerning their combustion chemistry and kinetics, particularly at low temperatures. This study investigates the pressure dependent kinetics of several reactions occurring during low-temperature cyclopentane combustion using theoretical chemical kinetics. The reaction pathways of the cyclopentyl + O2 adduct is traced to alkylhydroperoxide, cyclic ether, β-scission and HO2 elimination products. The calculations are carried out at the UCCSD(T)-F12b/cc-pVTZ-F12//M06-2X/6-311++G(d,p) level of theory. The barrierless entrance channel is treated using variable-reaction-coordinate transition state theory (VRC-TST) at the CASPT2(7e,6o) level of theory, including basis set, geometry relaxation and ZPE corrections. 1-D time-dependent multiwell master equation analysis is used to determine pressure-and temperature-dependent rate parameters of all investigated reactions. Tunneling corrections are included using Eckart barriers. Comparison with cyclohexane is used to elucidate the effect of ring size on the low temperature reactivity of naphthenes. The rate coefficients reported herein are suitable for use in cyclopentane and methylcyclopentane combustion models, even below ~900 K, where ignition is particularly sensitive to these pressure-dependent values.

  3. Neutron moderation at very low temperatures (1691)

    International Nuclear Information System (INIS)

    Lacaze, A.

    1961-04-01

    Starting from Harwell experiment carried out inside a low-power reactor, we intended to maintain a liquid hydrogen cell in a channel of the EL3 reactor (at Saclay) whose thermal neutrons flux is 10 14 neutrons/cm 2 /s. We tried to work out a device giving off an important beam of cold neutrons and able to operate in a way as automatic as possible during many consecutive day without a stop. Several circuits have already been achieved at very low temperatures but they brought out volumes and fluxes much lower than those we used this time. The difficulties we have met in carrying out such a device arose on the one hand from the very high energy release to which any kind of experiment is inevitably submitted when placed near the core of the reactor, on the other, hand from the very little room which is available in experimental channels of reactors. In such condition, it is necessary to use a moderator as effective as possible. This study is divided into three parts ; in the first part, we try to determine: a) conditions in which moderation takes place, hence the volume of the cell; b) materials likely to be used at low temperature and in pile; c) cooling system; hence we had to study fluid flow conditions at very low temperatures in very long ducts. The second part is devoted to the description of the device. The third part ventilates the results we have obtained. (author) [fr

  4. Low temperature surface chemistry and nanostructures

    Science.gov (United States)

    Sergeev, G. B.; Shabatina, T. I.

    2002-03-01

    The new scientific field of low temperature surface chemistry, which combines the low temperature chemistry (cryochemistry) and surface chemistry approaches, is reviewed in this paper. One of the most exciting achievements in this field of science is the development of methods to create highly ordered hybrid nanosized structures on different organic and inorganic surfaces and to encapsulate nanosized metal particles in organic and polymer matrices. We consider physical and chemical behaviour for the systems obtained by co-condensation of the components vapours on the surfaces cooled down to 4-10 and 70-100 K. In particular the size effect of both types, the number of atoms in the reactive species structure and the thickness of growing co-condensate film, on the chemical activity of the system is analysed in detail. The effect of the internal mechanical stresses on the growing interfacial co-condensate film formation and on the generation of fast (explosive) spontaneous reactions at low temperatures is discussed. The examples of unusual chemical interactions of metal atoms, clusters and nanosized particles, obtained in co-condensate films on the cooled surfaces under different conditions, are presented. The examples of highly ordered surface and volume hybrid nanostructures formation are analysed.

  5. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

    2010-09-01

    100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

  6. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  7. GaN and LED structures grown on pre-patterned silicon pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

    2010-01-15

    GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Low Temperature Synthesis of Magnesium Aluminate Spinel

    International Nuclear Information System (INIS)

    Lebedovskaya, E.G.; Gabelkov, S.V.; Litvinenko, L.M.; Logvinkov, D.S.; Mironova, A.G.; Odejchuk, M.A.; Poltavtsev, N.S.; Tarasov, R.V.

    2006-01-01

    The low-temperature synthesis of magnesium-aluminum spinel is carried out by a method of thermal decomposition in combined precipitated hydrates. The fine material of magnesium-aluminium spinel with average size of coherent dispersion's area 4...5 nanometers is obtained. Magnesium-aluminum spinel and initial hydrates were investigated by methods of the differential thermal analysis, the x-ray phase analysis and measurements of weight loss during the dehydration and thermal decomposition. It is established that synthesis of magnesium-aluminum spinel occurs at temperature 300 degree C by method of the x-ray phase analysis

  9. Low temperature photoresponse of monolayer tungsten disulphide

    Directory of Open Access Journals (Sweden)

    Bingchen Cao

    2014-11-01

    Full Text Available High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup, while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.

  10. Low-temperature preparation of pyrolytic carbon

    International Nuclear Information System (INIS)

    Kidd, R.W.; Seifert, D.A.; Browning, M.F.

    1984-01-01

    Previous studies have demonstrated that nuclear waste forms coated with chemical vapor deposited pyrolytic carbon (PyC) at about 1273 K can provide ground water leach protection. To minimize the release during coating of volatile material from the waste forms and permit the coating of waste forms with a low softening point, a study was initiated to develop parameters for the catalytic deposition of PyC at low temperatures. The parameters surveyed in a fluidized-bed coater were deposition temperatures, carbon precursors, catalyst, diluent gas, concentration, and pressure

  11. Investigations of Low Temperature Time Dependent Cracking

    Energy Technology Data Exchange (ETDEWEB)

    Van der Sluys, W A; Robitz, E S; Young, B A; Bloom, J

    2002-09-30

    The objective of this project was to investigate metallurgical and mechanical phenomena associated with time dependent cracking of cold bent carbon steel piping at temperatures between 327 C and 360 C. Boiler piping failures have demonstrated that understanding the fundamental metallurgical and mechanical parameters controlling these failures is insufficient to eliminate it from the field. The results of the project consisted of the development of a testing methodology to reproduce low temperature time dependent cracking in laboratory specimens. This methodology was used to evaluate the cracking resistance of candidate heats in order to identify the factors that enhance cracking sensitivity. The resultant data was integrated into current available life prediction tools.

  12. Ionometric determination of fluorides at low temperatures

    International Nuclear Information System (INIS)

    Kostyukova, I.S.; Ennan, A.A.; Dzerzhko, E.K.; Leivikova, A.A.

    1995-01-01

    A method for determining fluoride ions in solution at low temperatures using a solid-contact fluorine-selective electrode (FSE) has been developed. The effect of temperature (60 to -15 degrees C) on the calibration slope, potential equilibrium time, and operational stability is studied; the effect of an organic additive (cryoprotector) on the calibration slope is also studied. The temperature relationships obtained for the solid-contact FSEs allow appropriate corrections to be applied to the operational algorithm of the open-quotes Ftoringclose quotes hand-held semiautomatic HF gas analyzer for the operational temperature range of -16 to 60 degrees C

  13. Low-temperature centrifugal helium compressor

    International Nuclear Information System (INIS)

    Kawada, M.; Togo, S.; Akiyama, Y.; Wada, R.

    1974-01-01

    A centrifugal helium compressor with gas bearings, which can be operated at the temperature of liquid nitrogen, has been investigated. This compressor has the advantages that the compression ratio should be higher than the room temperature operation and that the contamination of helium could be eliminated. The outer diameter of the rotor is 112 mm. The experimental result for helium gas at low temperature shows a flow rate of 47 g/s and a compression ratio of 1.2 when the inlet pressure was 1 ata and the rotational speed 550 rev/s. The investigation is now focused on obtaining a compression ratio of 1.5. (author)

  14. Nitrous oxide emissions at low temperatures

    International Nuclear Information System (INIS)

    Martikainen, P.J.

    2002-01-01

    Microbial processes in soil are generally stimulated by temperature, but at low temperatures there are anomalies in the response of microbial activities. Soil physical-chemical characteristics allow existence of unfrozen water in soil also at temperatures below zero. Therefore, some microbial activities, including those responsible for nitrous oxide (N 2 0) production, can take place even in 'frozen' soil. Nitrous oxide emissions during winter are important even in boreal regions where they can account for more than 50% of the annual emissions. Snow pack therefore has great importance for N 2 0 emissions, as it insulates soil from the air allowing higher temperatures in soil than in air, and possible changes in snoav cover as a result of global warming would thus affect the N 2 0 emission from northern soils. Freezing-thawing cycles highly enhance N 2 0 emissions from soil, probably because microbial nutrients, released from disturbed soil aggregates and lysed microbial cells, support microbial N 2 0 production. However, the overall interactions between soil physics, chemistry, microbiology and N 2 0 production at low temperatures, including effects of freezing-thawing cycles, are still poorly known. (au)

  15. Efficient prepreg recycling at low temperatures

    Science.gov (United States)

    Pannkoke, Kord; Oethe, Marcus; Busse, Jürgen

    When manufacturing fibre reinforced plastics engineers are still confronted with a lack of experience concerning efficient recycling methods for prepreg cutting waste. Normally, the prepregs are cured and subsequently milled to use them as a filler material for polymers. However, this method is expensive and it is difficult to find applications for the milled FRP. An alternative method to recycle CFRP prepregs will be presented in this paper. Cutting the uncured prepreg waste was done by means of a saw mill which was cooled down to low temperatures. Working temperatures of -30°C are sufficient to harden the uncured resin and to achieve cuttable prepregs. Furthermore, post-curing during the cutting process is avoided with this technique. The result is a `cotton'-like matted structure with random fibre orientation and fibre length distribution. Subsequent curing was done by means of a press and an autoclave, respectively. It will be shown by means of tension and bending tests that low-temperature cutting of uncured prepregs is a way to partly conserve the high valuation of FRP during recycling. Furthermore, it offers possibilities for various applications.

  16. Measurement of low-temperature specific heat

    International Nuclear Information System (INIS)

    Stewart, G.R.

    1983-01-01

    The measurement of low-temperature specific heat (LTSH) (0.1 K< T<60 K) has seen a number of breakthroughs both in design concepts and instrumentation in the last 15 years: particularly in small sample calorimetry. This review attempts to provide an overview of both large and small sample calorimetry techniques at temperatures below 60 K, with sufficient references to enable more detailed study. A comprehensive review is made of the most reliable measurements of the LTSH of 84 of the elements to illustrate briefly some of the problems of measurements and analysis, as well as to provide additional references. More detail is devoted to three special areas of low-temperature calorimetry that have seen rapid development recently: (1) measurement of the specific heat of highly radioactive samples, (2) measurement of the specific heat of materials in high magnetic fields (18 T), and (3) measurement of the specific heat of very small (100 μg) samples. The review ends with a brief discussion of the frontier research currently underway on microcalorimetry for nanogram sample weights

  17. Extreme low temperature tolerance in woody plants

    Directory of Open Access Journals (Sweden)

    George Richard Strimbeck

    2015-10-01

    Full Text Available Woody plants in boreal to arctic environments and high mountains survive prolonged exposure to temperatures below -40˚C and minimum temperatures below -60˚C, and laboratory tests show that many of these species can also survive immersion in liquid nitrogen at -196˚C. Studies of biochemical changes that occur during acclimation, including recent proteomic and metabolomic studies, have identified changes in carbohydrate and compatible solute concentrations, membrane lipid composition, and proteins, notably dehydrins, that may have important roles in survival at extreme low temperature. Consideration of the biophysical mechanisms of membrane stress and strain lead to the following hypotheses for cellular and molecular mechanisms of survival at extreme low temperature: 1. Changes in lipid composition stabilize membranes at temperatures above the lipid phase transition temperature (-20 to 30˚C, preventing phase changes that result in irreversible injury. 2. High concentrations of oligosaccharides promote vitrification or high viscosity in the cytoplasm in freeze-dehydrated cells, which would prevent deleterious interactions between membranes. 3. Dehydrins bind membranes and further promote vitrification or act stearically to prevent membrane-membrane interactions.

  18. Computational Chemistry of Cyclopentane Low Temperature Oxidation

    KAUST Repository

    El Rachidi, Mariam; Zá dor, Judit; Sarathy, Mani

    2015-01-01

    reactions occurring during low-temperature cyclopentane combustion using theoretical chemical kinetics. The reaction pathways of the cyclopentyl + O2 adduct is traced to alkylhydroperoxide, cyclic ether, β-scission and HO2 elimination products. The calculations are carried out at the UCCSD(T)-F12b/cc-pVTZ-F12//M06-2X/6-311++G(d,p) level of theory. The barrierless entrance channel is treated using variable-reaction-coordinate transition state theory (VRC-TST) at the CASPT2(7e,6o) level of theory, including basis set, geometry relaxation and ZPE corrections. 1-D time-dependent multiwell master equation analysis is used to determine pressure-and temperature-dependent rate parameters of all investigated reactions. Tunneling corrections are included using Eckart barriers. Comparison with cyclohexane is used to elucidate the effect of ring size on the low temperature reactivity of naphthenes. The rate coefficients reported herein are suitable for use in cyclopentane and methylcyclopentane combustion models, even below ~900 K, where ignition is particularly sensitive to these pressure-dependent values.

  19. The Low Temperature Microgravity Physics Experiments Project

    Science.gov (United States)

    Holmes, Warren; Lai, Anthony; Croonquist, Arvid; Chui, Talso; Eraker, J. H.; Abbott, Randy; Mills, Gary; Mohl, James; Craig, James; Balachandra, Balu; hide

    2000-01-01

    The Low Temperature Microgravity Physics Facility (LTMPF) is being developed by NASA to provide long duration low temperature and microgravity environment on the International Space Station (ISS) for performing fundamental physics investigations. Currently, six experiments have been selected for flight definition studies. More will be selected in a two-year cycle, through NASA Research Announcement. This program is managed under the Low Temperature Microgravity Physics Experiments Project Office at the Jet Propulsion Laboratory. The facility is being designed to launch and returned to earth on a variety of vehicles including the HII-A and the space shuttle. On orbit, the facility will be connected to the Exposed Facility on the Japanese Experiment Module, Kibo. Features of the facility include a cryostat capable of maintaining super-fluid helium at a temperature of 1.4 K for 5 months, resistance thermometer bridges, multi-stage thermal isolation system, thermometers capable of pico-Kelvin resolution, DC SQUID magnetometers, passive vibration isolation, and magnetic shields with a shielding factor of 80dB. The electronics and software architecture incorporates two VME buses run using the VxWorks operating system. Technically challenging areas in the design effort include the following: 1) A long cryogen life that survives several launch and test cycles without the need to replace support straps for the helium tank. 2) The minimization of heat generation in the sample stage caused by launch vibration 3) The design of compact and lightweight DC SQUID electronics. 4) The minimization of RF interference for the measurement of heat at pico-Watt level. 5) Light weighting of the magnetic shields. 6) Implementation of a modular and flexible electronics and software architecture. The first launch is scheduled for mid-2003, on an H-IIA Rocket Transfer Vehicle, out of the Tanegashima Space Center of Japan. Two identical facilities will be built. While one facility is onboard

  20. Radically Different Kinetics at Low Temperatures

    Science.gov (United States)

    Sims, Ian

    2014-06-01

    The use of the CRESU (Cinétique de Réaction en Ecoulement Supersonique Uniforme, or Reaction Kinetics in Uniform Supersonic Flow) technique coupled with pulsed laser photochemical kinetics methods has shown that reactions involving radicals can be very rapid at temperatures down to 10 K or below. The results have had a major impact in astrochemistry and planetology, as well as proving an exacting test for theory. The technique has also been applied to the formation of transient complexes of interest both in atmospheric chemistry and combustion. Until now, all of the chemical reactions studied in this way have taken place on attractive potential energy surfaces with no overall barrier to reaction. The F + H2 {→} HF + H reaction does possess a substantial energetic barrier ({\\cong} 800 K), and might therefore be expected to slow to a negligible rate at very low temperatures. In fact, this H-atom abstraction reaction does take place efficiently at low temperatures due entirely to tunneling. I will report direct experimental measurements of the rate of this reaction down to a temperature of 11 K, in remarkable agreement with state-of-the-art quantum reactive scattering calculations by François Lique (Université du Havre) and Millard Alexander (University of Maryland). It is thought that long chain cyanopolyyne molecules H(C2)nCN may play an important role in the formation of the orange haze layer in Titan's atmosphere. The longest carbon chain molecule observed in interstellar space, HC11N, is also a member of this series. I will present new results, obtained in collaboration with Jean-Claude Guillemin (Ecole de Chimie de Rennes) and Stephen Klippenstein (Argonne National Labs), on reactions of C2H, CN and C3N radicals (using a new LIF scheme by Hoshina and Endo which contribute to the low temperature formation of (cyano)polyynes. H. Sabbah, L. Biennier, I. R. Sims, Y. Georgievskii, S. J. Klippenstein, I. W. M. Smith, Science 317, 102 (2007). S. D. Le Picard, M

  1. Low temperature distillation of coal, shale, etc

    Energy Technology Data Exchange (ETDEWEB)

    1938-08-12

    A process is disclosed for the low temperature distillation of solid carbonaceous fuels, such as coal, lignite, shale or the like, which comprises feeding or supplying the comminuted fuel in the form of a layer of shallow depth to drying and distilling zones in succession moving the fuel forward through the zones, submitting it to progressively increasing nonuniform heating therein by combustion gases supplied to the distillation zone and traveling thence to the drying zone, the gases heating the distillation zone indirectly and the drying zone both indirectly and then directly such that the fuel retains its solid discrete form during substantially the whole of its travel through the drying and distillation zones, subjecting the fuel for a portion of its travel to a zigzag ploughing and propelling movement on a heated sole, and increasing the heating so as to cause fusion of the fuel immediately prior to its discharge from the distillation zone.

  2. On Low-temperature Polyamorphous transformations

    International Nuclear Information System (INIS)

    Bakay, A.S.

    2006-01-01

    A theory of polyamorphous transformations in glasses is constructed in the framework of a model of heterophase fluctuations with allowance for the fact that a glass inherits the short- and intermediate-range order from the liquid. A multicomponent order parameter describing the concentration of fluctuons with different types of short-range order is introduced, along with the concepts of isoconfigurational and non-isoconfigurational transitions in the glass. Taking the nonergodicity, nonequilibrium, and multiplicity of structural states of a glass into account leads to a kinetic criterion of observability of polyamorphism of a glass. As an example, a theory is constructed for the low-temperature first-order phase transition in an orientational glass based on doped fullerite. The relaxation processes of this system are described, including the subsystem of tunneling states. The possibility of a hierarchy of polyamorphous transformations in a glass is discussed

  3. Shock waves in helium at low temperatures

    International Nuclear Information System (INIS)

    Liepmann, H.W.; Torczynski, J.R.

    1986-01-01

    Results are reported from studies of the properties of low temperature He-4 using shock waves as a probe. Ideal shock tube theory is used to show that sonic speeds of Mach 40 are attainable in He at 300 K. Viscosity reductions at lower temperatures minimize boundary layer effects at the side walls. A two-fluid model is described to account for the phase transition which He undergoes at temperatures below 2.2 K, after which the quantum fluid (He II) and the normal compressed superfluid (He I) coexist. Analytic models are provided for pressure-induced shocks in He I and temperature-induced shock waves (called second sound) which appear in He II. The vapor-fluid interface of He I is capable of reflecting second and gasdynamic sound shocks, which can therefore be used as probes for studying phase transitions between He I and He II. 17 references

  4. Preparation of silver nanoparticles at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Mini, E-mail: mishramini5@gmail.com [Centre of Environmental Science, Department of Botany, University of Allahabad, Allahabad, U.P. (India); Chauhan, Pratima, E-mail: mangu167@yahoo.co.in [Department of Physics, University of Allahabad, Allahabad U.P. (India)

    2016-04-13

    Silver from ancient time is used as antimicrobial agent in the bulk form but now with the advancement in nanotechnology silver in the form of nanoparticles shown potential effect against microbes which make us easy to fight with many diseases plants and animals. In this work silver nanoparticles were synthesized by chemical routes using sodium borohydride as reducing agent at low temperature. The particles were characterized through UV-Visible spectroscopy as well as X-Ray Diffraction. The UV-visible spectra of silver nanoparticles exhibited absorption at 425 cm; the crystallite size of the particles is between 19nm to 39nm. EDAX graph shows two peaks of silver and oxygen. Water absorbed by silver nanoparticles was removed by the calcinations.

  5. Preparation of silver nanoparticles at low temperature

    International Nuclear Information System (INIS)

    Mishra, Mini; Chauhan, Pratima

    2016-01-01

    Silver from ancient time is used as antimicrobial agent in the bulk form but now with the advancement in nanotechnology silver in the form of nanoparticles shown potential effect against microbes which make us easy to fight with many diseases plants and animals. In this work silver nanoparticles were synthesized by chemical routes using sodium borohydride as reducing agent at low temperature. The particles were characterized through UV-Visible spectroscopy as well as X-Ray Diffraction. The UV-visible spectra of silver nanoparticles exhibited absorption at 425 cm; the crystallite size of the particles is between 19nm to 39nm. EDAX graph shows two peaks of silver and oxygen. Water absorbed by silver nanoparticles was removed by the calcinations.

  6. Desalination by very low temperature nuclear heat

    International Nuclear Information System (INIS)

    Saari, Risto

    1977-01-01

    A new sea water desalination method has been developed: Nord-Aqua Vacuum Evaporation, which utilizes waste heat at a very low temperature. The requisite vacuum is obtained by the aid of a barometric column and siphon, and the dissolved air is removed from the vacuum by means of water flows. According to test results from a pilot plant, the process is operable if the waste heat exists at a temperature 7degC higher than ambient. The pumping energy which is then required is 9 kcal/kg, or 1.5% of the heat of vaporization of water. Calculations reveal that the method is economically considerably superior to conventional distilling methods. (author)

  7. Recrystallization of magnesium deformed at low temperatures

    International Nuclear Information System (INIS)

    Fromageau, R.; Pastol, J.L.; Revel, G.

    1978-01-01

    The recrystallization of magnesium was studied after rolling at temperatures ranging between 248 and 373 K. For zone refined magnesium the annealing behaviour as observed by electrical resistivity measurements showed two stages at about 250 K and 400 K due respectively to recrystallization and grain growth. The activation energy associated with the recrystallization stage was 0.75 +- 0.01 eV. In less pure magnesium, with nominal purity 99.99 and 99.9%, the recrystallization stage was decomposed into two substages. Activation energies were determined in relation with deformation temperature and purity. The magnesium of intermediate purity (99.99%) behaved similarly to the lowest purity metal when it was deformed at high temperature and to the purest magnesium when the deformation was made at low temperature. This behaviour was discussed in connection with the theories of Luecke and Cahn. (Auth.)

  8. Low temperature distillation of powdered materials

    Energy Technology Data Exchange (ETDEWEB)

    1929-04-11

    In the low temperature distillation of powdered material such as coal, brown coal, or oil shale, dust carried by the gases and vapors is precipitated by supplying liquid hydrocarbons to the effluent gases, for example, to a dust remover through which the distillates pass. The material is supplied through a hopper and moved through a retort by a worm feed, and is discharged into a sump. Scavenging gases such as steam may be introduced through a pipe. Two conveyor worms moving in opposite directions are provided in an outlet conduit which may be surrounded by a cooling jacket. Heavy hydrocarbons condense on the walls of the conduit and on the conveyor worms and serve as dust catchers for the distillates, the lighted volatiles escaping through an outlet. The high boiling point oils flow back to and are cracked in the retort. Oils such as tar oils may be sprayed into the conduit or directly adjacent the entry of the material from feeding hopper.

  9. Installation for low temperature vapor explosion experiment

    International Nuclear Information System (INIS)

    Nilsuwankosit, Sunchai; Archakositt, Urith

    2000-01-01

    A preparation for the experiment on the low temperature vapor explosion was planned at the department of Nuclear Technology, Chulalongkorn University, Thailand. The objective of the experiment was to simulate the interaction between the molten fuel and the volatile cooling liquid without resorting to the high temperature. The experiment was expected to involve the injection of the liquid material at a moderate temperature into the liquid material with the very low boiling temperature in order to observe the level of the pressurization as a function of the temperatures and masses of the applied materials. For this purpose, the liquid nitrogen and the water were chosen as the coolant and the injected material for this experiment. Due to the size of the installation and the scale of the interaction, only lumped effect of various parameters on the explosion was expected from the experiment at this initial stage. (author)

  10. Biomedical applications using low temperature plasma technology

    International Nuclear Information System (INIS)

    Dai Xiujuan; Jiang Nan

    2006-01-01

    Low temperature plasma technology and biomedicine are two different subjects, but the combination of the two may play a critical role in modern science and technology. The 21 st century is believed to be a biotechnology century. Plasma technology is becoming a widely used platform for the fabrication of biomaterials and biomedical devices. In this paper some of the technologies used for material surface modification are briefly introduced. Some biomedical applications using plasma technology are described, followed by suggestions as to how a bridge between plasma technology and biomedicine can be built. A pulsed plasma technique that is used for surface functionalization is discussed in detail as an example of this kind of bridge or combination. Finally, it is pointed out that the combination of biomedical and plasma technology will be an important development for revolutionary 21st century technologies that requires different experts from different fields to work together. (authors)

  11. Low-temperature geothermal resources of Washington

    Energy Technology Data Exchange (ETDEWEB)

    Schuster, J.E. [Washington State Dept. of Natural Resources, Olympia, WA (United States). Div. of Geology and Earth Resources; Bloomquist, R.G. [Washington State Energy Office, Olympia, WA (United States)

    1994-06-01

    This report presents information on the location, physical characteristics, and water chemistry of low-temperature geothermal resources in Washington. The database includes 941 thermal (>20C or 68F) wells, 34 thermal springs, lakes, and fumaroles, and 238 chemical analyses. Most thermal springs occur in the Cascade Range, and many are associated with stratovolcanoes. In contrast, 97 percent of thermal wells are located in the Columbia Basin of southeastern Washington. Some 83.5 percent are located in Adams, Benton, Franklin, Grant, Walla Walla, and Yakima Counties. Yakima County, with 259 thermal wells, has the most. Thermal wells do not seem to owe their origin to local sources of heat, such as cooling magma in the Earth`s upper crust, but to moderate to deep circulation of ground water in extensive aquifers of the Columbia River Basalt Group and interflow sedimentary deposits, under the influence of a moderately elevated (41C/km) average geothermal gradient.

  12. Low-temperature glycerolysis of avocado oil

    Science.gov (United States)

    Satriana, Arpi, Normalina; Supardan, Muhammad Dani; Gustina, Rizka Try; Mustapha, Wan Aida Wan

    2018-04-01

    Glycerolysis can be a useful technique for production of mono- and diacylglycerols from triacylglycerols present in avocado oil. In the present work, the effect of catalyst and co-solvent concentration on low-temperature glycerolysis of avocado oil was investigated at 40oC of reaction temperature. A hydrodynamic cavitation system was used to enhance the miscibility of the oil and glycerol phases. NaOH and acetone were used as catalyst and co-solvent, respectively. The experimental results showed that the catalyst and co-solvent concentration affected the glycerolysis reaction rate. The catalyst concentration of 1.5% and co-solvent concentration of 300% were the optimised conditions. A suitable amount of NaOH and acetone must be added to achieve an optimum of triacylglycerol conversion.

  13. Low Temperature Waste Immobilization Testing Vol. I

    Energy Technology Data Exchange (ETDEWEB)

    Russell, Renee L.; Schweiger, Michael J.; Westsik, Joseph H.; Hrma, Pavel R.; Smith, D. E.; Gallegos, Autumn B.; Telander, Monty R.; Pitman, Stan G.

    2006-09-14

    The Pacific Northwest National Laboratory (PNNL) is evaluating low-temperature technologies to immobilize mixed radioactive and hazardous waste. Three waste forms—alkali-aluminosilicate hydroceramic cement, “Ceramicrete” phosphate-bonded ceramic, and “DuraLith” alkali-aluminosilicate geopolymer—were selected through a competitive solicitation for fabrication and characterization of waste-form properties. The three contractors prepared their respective waste forms using simulants of a Hanford secondary waste and Idaho sodium bearing waste provided by PNNL and characterized their waste forms with respect to the Toxicity Characteristic Leaching Procedure (TCLP) and compressive strength. The contractors sent specimens to PNNL, and PNNL then conducted durability (American National Standards Institute/American Nuclear Society [ANSI/ANS] 16.1 Leachability Index [LI] and modified Product Consistency Test [PCT]) and compressive strength testing (both irradiated and as-received samples). This report presents the results of these characterization tests.

  14. The effect of low temperature cryocoolers on the development of low temperature superconducting magnets

    International Nuclear Information System (INIS)

    Green, Michael A.

    2000-01-01

    The commercial development of reliable 4 K cryocoolers improves the future prospects for magnets made from low temperature superconductors (LTS). The hope of the developers of high temperature superconductors (HTS) has been to replace liquid helium cooled LTS magnets with HTS magnets that operate at or near liquid nitrogen temperature. There has been limited success in this endeavor, but continued problems with HTS conductors have greatly slowed progress toward this goal. The development of cryocoolers that reliably operate below 4 K will allow magnets made from LTS conductor to remain very competitive for many years to come. A key enabling technology for the use of low temperature cryocoolers on LTS magnets has been the development of HTS leads. This report describes the characteristics of LTS magnets that can be successfully melded to low-temperature cryocoolers. This report will also show when it is not appropriate to consider the use of low-temperature cryocoolers to cool magnets made with LTS conductor. A couple of specific examples of LTS magnets where cryocoolers can be used are given

  15. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  16. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

    Science.gov (United States)

    Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

    2017-08-17

    We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

  17. Active carbons from low temperature conversion chars

    International Nuclear Information System (INIS)

    Adebowale, K.O.; Bayer, E.

    2002-05-01

    Hulls obtained from the fruits of five tropical biomass have been subjected to low temperature conversion process and their chars activated by partial physical gasification to produce active carbons. The biomass are T. catappa, B. nitida, L leucophylla, D. regia and O. martiana. The bulk densities of the samples ranged from 0.32 g.cm 3 to 0.52 g.cm 3 . Out of the samples T. catappa recorded the highest cellulose content (41.9 g.100g -1 ), while O. martiana contained the highest lignin content (40.7 g.100g -1 ). The ash of the samples were low (0.5 - 4.4%). The percentage of char obtained after conversion were high (33.7% - 38.6%). Active carbons obtained from T. catappa, D. regia and O. martiana, recorded high methylene blue numbers and iodine values. They also displayed good micro- and mesostructural characteristics. Micropore volume (V micro ) was between 0.33cm 3 .g -1 - 0.40cm 3 .g -1 , while the mesopore volume(V meso ) was between 0.05 cm 3 .g -1 - 0.07 cm 3 .g -1 . The BET specific surface exceeds 1000 m 2 .g -1 . All these values compared favourably with high grade commercial active carbons. (author)

  18. Low Temperature Catalyst for NH3 Removal

    Science.gov (United States)

    Monje, Oscar; Melendez, Orlando

    2013-01-01

    Air revitalization technologies maintain a safe atmosphere inside spacecraft by the removal of C02, ammonia (NH3), and trace contaminants. NH3 onboard the International Space Station (ISS) is produced by crew metabolism, payloads, or during an accidental release of thermal control refrigerant. Currently, the ISS relies on removing NH3 via humidity condensate and the crew wears hooded respirators during emergencies. A different approach to cabin NH3 removal is to use selective catalytic oxidation (SCO), which builds on thermal catalytic oxidation concepts that could be incorporated into the existing TCCS process equipment architecture on ISS. A low temperature platinum-based catalyst (LTP-Catalyst) developed at KSC was used for converting NH3 to H20 and N2 gas by SCO. The challenge of implementing SCO is to reduce formation of undesirable byproducts like NOx (N20 and NO). Gas mixture analysis was conducted using FTIR spectrometry in the Regenerable VOC Control System (RVCS) Testbed. The RVCS was modified by adding a 66 L semi-sealed chamber, and a custom NH3 generator. The effect of temperature on NH3 removal using the LTP-Catalyst was examined. A suitable temperature was found where NH3 removal did not produce toxic NO, (NO, N02) and N20 formation was reduced.

  19. Pyrocatechol from low-temperature tar

    Energy Technology Data Exchange (ETDEWEB)

    Lowenstein-Lom, W

    1950-01-01

    A method for production and purification of pyrocatechol (I) from low-temperature carbonization effluents was described. Phenosolvan, a mixture of isobutyl, butyl, and amyl acetates, was used for extraction of I from the effluent. After removing most of the solvent by distillation, the separation was completed by batch vacuum distillation at 25 to 50 millimeter Hg. The 4th fraction, containing I 49.2, I homologues 31.1, o-cresol 6.8, xylenols 7.3, and higher boiling material and residue 5.6 percent, was treated in a purification pilot plant, which was described. This fraction was dissolved in an equal weight of C/sub 6/H/sub 6/, then cooled. I was crystallized out in a vacuum crystallizer, centrifuged, and washed with C/sub 6/H/sub 6/, dried in a rotating-plate drier and taken to storage. The purified I melted 100/sup 0/ to 102/sup 0/ and contained 4 to 8 percent homologues or other impurities. A further recrystallization raised its purity to 99.2 percent. Plant capacities and production costs are given.

  20. Enhanced Design Alternative I: Low Temperature Design

    International Nuclear Information System (INIS)

    MacNeil, K.

    1999-01-01

    The purpose of this document is to evaluate Enhanced Design Alternative (EDA) 1, the low temperature repository design concept (CRWMS M and O 1999a). This technical document will provide supporting information for Site Recommendation (SR) and License Application (LA). Preparation of this evaluation will be in accordance with the technical document preparation plan (TDPP), (CRWMS M and O 1999b). EDA 1, one of five EDAs, was evolved from evaluation of a series of design features and alternatives developed during the first phase of the License Application Design Selection (LADS) process. Low, medium, and high temperature concepts were developed from the design features and alternatives prepared during Phase 1 of the LADS effort (CRWMS M and O 1999a). EDA 1 will first be evaluated against a single Screening Criterion, outlined in CRWMS M and O 1999a, which addresses post-closure performance of the repository. The performance of the repository is defined quantitatively as the peak radiological dose rate to an average individual of a critical group at a distance of 20 km from the repository site within 10,000 years. To satisfy this criterion the peak dose rate must not exceed the anticipated regulatory level of 25 mrem/yr within 10,000 years. If the EDA meets the screening criterion, the EDA will be further evaluated against the LADS Phase 2 Evaluation Criteria contained in CRWMS M and O 1999a

  1. Low temperature nitrogen chemistry. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Glarborg, P.; Dam-Johansen, K.; Kristensen, P.G.; Alzueta, M.; Roejel, H.

    1997-04-01

    The results of a two tasks program on Natural Gas Reburning are reported. The work involved an experimental and theoretical study of the reburning and hybrid reburning/SNCR chemistry in the 1000-1500 K range. The interactions between hydrocarbon and nitrogen chemistry under fuel-rich conditions were investigated in order to assess the NO{sub x} reduction potential of low temperature reburning. The effect of reburn fuel(carbon monoxide, methane, acetylene, ethylene, ethane, and methane/ethane mixture), temperature, stoichiometry, reactant dilution, reaction time, and inlet NO level were studied. The results indicate a significant NO reduction potential even below 1400 K, but extrapolation to practical conditions are complicated by inadequate knowledge of the detailed chemistry as well as of the effect of mixing. The possibilities of enhancing the conversion to N{sub 2} instead of NO by adding selective reducing agents (hybrid reburning/SNCR) were evaluated. Our results indicate little synergistic effect between reburn and SNCR. The most simple configuration, where the selective reducing agent is injected together with the burnout air, is not expected to be effective, unless the N-agent is injected in form of an aqueous solution. A chemical kinetic model for reburning and reburn/SNCR is listed and can be obtained by e-mail from pgl(commerical at)kt.dtu.dk.(au) 145 refs.

  2. Active carbons from low temperature conversion chars

    Energy Technology Data Exchange (ETDEWEB)

    Adebowale, K O [Department of Chemistry, University of lbadan, lbadan (Nigeria); Abdus Salam International Centre for Theoretical Physics, Trieste (Italy); Bayer, E [Universitaet Tuebingen, Institut fuer Organische Chemie, Forschungstelle Nukleinsaeure- und Peptidchemie, Tuebingen (Germany)

    2002-05-01

    Hulls obtained from the fruits of five tropical biomass have been subjected to low temperature conversion process and their chars activated by partial physical gasification to produce active carbons. The biomass are T. catappa, B. nitida, L leucophylla, D. regia and O. martiana. The bulk densities of the samples ranged from 0.32 g.cm{sup 3} to 0.52 g.cm{sup 3}. Out of the samples T. catappa recorded the highest cellulose content (41.9 g.100g{sup -1}), while O. martiana contained the highest lignin content (40.7 g.100g{sup -1}). The ash of the samples were low (0.5 - 4.4%). The percentage of char obtained after conversion were high (33.7% - 38.6%). Active carbons obtained from T. catappa, D. regia and O. martiana, recorded high methylene blue numbers and iodine values. They also displayed good micro- and mesostructural characteristics. Micropore volume (V{sub micro}) was between 0.33cm{sup 3}.g{sup -1} - 0.40cm{sup 3}.g{sup -1}, while the mesopore volume(V{sub meso}) was between 0.05 cm{sup 3}.g{sup -1} - 0.07 cm{sup 3}.g{sup -1}. The BET specific surface exceeds 1000 m{sup 2}.g{sup -1}. All these values compared favourably with high grade commercial active carbons. (author)

  3. Low temperature humidification dehumidification desalination process

    International Nuclear Information System (INIS)

    Al-Enezi, Ghazi; Ettouney, Hisham; Fawzy, Nagla

    2006-01-01

    The humidification dehumidification desalination process is viewed as a promising technique for small capacity production plants. The process has several attractive features, which include operation at low temperature, ability to utilize sustainable energy sources, i.e. solar and geothermal, and requirements of low technology level. This paper evaluates the characteristics of the humidification dehumidification desalination process as a function of operating conditions. A small capacity experimental system is used to evaluate the process characteristics as a function of the flow rate of the water and air streams, the temperature of the water stream and the temperature of the cooling water stream. The experimental system includes a packed humidification column, a double pipe glass condenser, a constant temperature water circulation tank and a chiller for cooling water. The water production is found to depend strongly on the hot water temperature. Also, the water production is found to increase upon the increase of the air flow rate and the decrease of the cooling water temperature. The measured air and water temperatures, air relative humidity and the flow rates are used to calculate the air side mass transfer coefficient and the overall heat transfer coefficient. Measured data are found to be consistent with previous literature results

  4. Some experiments in low-temperature thermometry

    International Nuclear Information System (INIS)

    Fogle, W.E.

    1982-11-01

    A powdered cerous magnesium nitrate (CMN) temperature scale has been developed in the 0.016 to 3.8 K region which represents an interpolation between the 3 He/ 4 He (T 62 /T 58 ) vapor pressure scale and absolute temperatures in the millikelvin region as determined with a 60 Co in hcp Co nuclear orientation thermometer (NOT). Both ac and dc susceptibility thermometers were used in these experiments. The ac susceptibility of a 13 mg CMN-oil slurry was measured with a mutual inductance bridge employing a SQUID null detector while the dc susceptibility of a 3 mg slurry was measured with a SQUID/flux transformer combination. To check the internal consistency of the NOT, γ-ray intensities were measured both parallel and perpendicular to the Co crystal c-axis. The independent temperatures determined in this fashion were found to agree to within experimental error. For the CMN thermometers employed in these experiments, the susceptibility was found to obey a Curie-Weiss law with a Weiss constant of Δ = 1.05 +- 0.1 mK. The powdered CMN scale in the 0.05 to 1.0 K region was transferred to two germanium resistance thermometers for use in low-temperature specific heat measurements. The integrity of the scale was checked by examining the temperature dependence of the specific heat of high purity copper in the 0.1 to 1 K region. In more recent experiments in this laboratory, the scale was also checked by a comparison with the National Bureau of Standards cryogenic temperature scale (NBS-CTS-1). The agreement between the two scales in the 99 to 206 mK region was found to be on the order of the stated accuracy of the NBS scale

  5. Buffers Plus

    Science.gov (United States)

    Ramette, Richard W.

    1998-11-01

    In 1989 JCE Software published The Acid-Base Package: A Collection of Useful Programs for Proton Transfer Systems (Ramette, R. W. J. Chem. Educ. Software 1989, 2B No. 2). This DOS program has been fully upgraded by the same author to the world of Windows 95. Buffers Plus takes advantage of a modern user interface and offers many new options not possible in the original version.

  6. Buffer fluid

    Energy Technology Data Exchange (ETDEWEB)

    Mirzadzhanzade, A Kh; Dedusanko, G Ya; Dinaburg, L S; Markov, Yu M; Rasizade, Ya N; Rozov, V N; Sherstnev, N M

    1979-08-30

    A drilling fluid is suggested for separating the drilling and plugging fluids which contains as the base increased solution of polyacrylamide and additive. In order to increase the viscoelastic properties of the liquid with simultaneous decrease in the periods of its fabrication, the solution contains as an additive dry bentonite clay. In cases of the use of a buffer fluid under conditions of negative temperatures, it is necessary to add to it table salt or ethylene glycol.

  7. Composite Materials for Low-Temperature Applications

    Science.gov (United States)

    2008-01-01

    Composite materials with improved thermal conductivity and good mechanical strength properties should allow for the design and construction of more thermally efficient components (such as pipes and valves) for use in fluid-processing systems. These materials should have wide application in any number of systems, including ground support equipment (GSE), lunar systems, and flight hardware that need reduced heat transfer. Researchers from the Polymer Science and Technology Laboratory and the Cryogenics Laboratory at Kennedy Space Center were able to develop a new series of composite materials that can meet NASA's needs for lightweight materials/composites for use in fluid systems and also expand the plastic-additive markets. With respect to thermal conductivity and physical properties, these materials are excellent alternatives to prior composite materials and can be used in the aerospace, automotive, military, electronics, food-packaging, and textile markets. One specific application of the polymeric composition is for use in tanks, pipes, valves, structural supports, and components for hot or cold fluid-processing systems where heat flow through materials is a problem to be avoided. These materials can also substitute for metals in cryogenic and other low-temperature applications. These organic/inorganic polymeric composite materials were invented with significant reduction in heat transfer properties. Decreases of 20 to 50 percent in thermal conductivity versus that of the unmodified polymer matrix were measured. These novel composite materials also maintain mechanical properties of the unmodified polymer matrix. These composite materials consist of an inorganic additive combined with a thermoplastic polymer material. The intrinsic, low thermal conductivity of the additive is imparted into the thermoplastic, resulting in a significant reduction in heat transfer over that of the base polymer itself, yet maintaining most of the polymer's original properties. Normal

  8. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  9. Low Temperature Surface Carburization of Stainless Steels

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Sunniva R; Heuer, Arthur H; Sikka, Vinod K

    2007-12-07

    Low-temperature colossal supersaturation (LTCSS) is a novel surface hardening method for carburization of austenitic stainless steels (SS) without the precipitation of carbides. The formation of carbides is kinetically suppressed, enabling extremely high or colossal carbon supersaturation. As a result, surface carbon concentrations in excess of 12 at. % are routinely achieved. This treatment increases the surface hardness by a factor of four to five, improving resistance to wear, corrosion, and fatigue, with significant retained ductility. LTCSS is a diffusional surface hardening process that provides a uniform and conformal hardened gradient surface with no risk of delamination or peeling. The treatment retains the austenitic phase and is completely non-magnetic. In addition, because parts are treated at low temperature, they do not distort or change dimensions. During this treatment, carbon diffusion proceeds into the metal at temperatures that constrain substitutional diffusion or mobility between the metal alloy elements. Though immobilized and unable to assemble to form carbides, chromium and similar alloying elements nonetheless draw enormous amounts of carbon into their interstitial spaces. The carbon in the interstitial spaces of the alloy crystals makes the surface harder than ever achieved before by more conventional heat treating or diffusion process. The carbon solid solution manifests a Vickers hardness often exceeding 1000 HV (equivalent to 70 HRC). This project objective was to extend the LTCSS treatment to other austenitic alloys, and to quantify improvements in fatigue, corrosion, and wear resistance. Highlights from the research include the following: • Extension of the applicability of the LTCSS process to a broad range of austenitic and duplex grades of steels • Demonstration of LTCSS ability for a variety of different component shapes and sizes • Detailed microstructural characterization of LTCSS-treated samples of 316L and other alloys

  10. Quantum Simulations of Low Temperature High Energy Density Matter

    National Research Council Canada - National Science Library

    Voth, Gregory

    2004-01-01

    .... Using classical molecular dynamics simulations to evaluate these equilibrium properties would predict qualitatively incorrect results for low temperature solid hydrogen, because of the highly quantum...

  11. Containment test in area of high latitude and low temperature

    International Nuclear Information System (INIS)

    Cai Jiantao; Ni Yongsheng; Jia Wutong

    2014-01-01

    The effects of high latitude and low temperature on containment test are detailed analyzed from the view of design, equipment, construct and start-up, and the solution is put forward. The major problems resolved is as below: the effects of low temperature and high wind on defect inspection of the containment surface, the effects of test load on the affiliated equipment of containment in the condition of low temperature, and the effects of low temperature on the containment leak rate measurement. Application in Hongyanhe Unit 1 showed that the proposed scheme can effectively overcome the influence of adverse weather on the containment test. (authors)

  12. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  13. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-12-01

    Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  14. The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Yong Nam, E-mail: ynahn81@gmail.com; Lee, Sung Hoon, E-mail: sunghoon.lee@corning.com; Lim, Sung Keun, E-mail: sk96.lim@samsung.com; Woo, Kwang Je, E-mail: kwangje.woo@corning.com; Kim, Hyunbin, E-mail: hyunbin.kim@corning.com

    2015-03-15

    Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH{sub 3} flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films.

  15. The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Ahn, Yong Nam; Lee, Sung Hoon; Lim, Sung Keun; Woo, Kwang Je; Kim, Hyunbin

    2015-01-01

    Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH 3 flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films

  16. Low temperature barrier wellbores formed using water flushing

    Science.gov (United States)

    McKinzie, II; John, Billy [Houston, TX; Keltner, Thomas Joseph [Spring, TX

    2009-03-10

    A method of forming an opening for a low temperature well is described. The method includes drilling an opening in a formation. Water is introduced into the opening to displace drilling fluid or indigenous gas in the formation adjacent to a portion of the opening. Water is produced from the opening. A low temperature fluid is applied to the opening.

  17. Effects of low temperature and drought on the physiological and ...

    African Journals Online (AJOL)

    To find out how oil palm adapts to the environmental conditions, the dynamics of a series of important physiological components derived from the leaves of potted oil palm seedlings under drought stress (DS) (water with holding) and low temperature stress (LTS) (10°C) were studied. The results showed that low temperature ...

  18. Low temperature magnetic structure of MnSe

    Indian Academy of Sciences (India)

    Abstract. In this paper we report low temperature neutron diffraction studies on MnSe in order to understand the anomalous behaviour of their magnetic and transport prop- erties. Our study indicates that at low temperatures MnSe has two coexisting crystal structures, high temperature NaCl and hexagonal NiAs. NiAs phase ...

  19. Low temperature gaseous surface hardening of stainless steel

    DEFF Research Database (Denmark)

    Christiansen, Thomas; Somers, Marcel A. J.

    2010-01-01

    The present contribution gives an overview of some of the technological aspects of low temperature thermochemical treatment of stainless steel. Examples of low temperature gaseous nitriding, carburising and nitrocarburising of stainless steel are presented and discussed. In particular......, the morphology, microstructure and characteristics of so-called expanite “layers” on stainless steel are addressed....

  20. Physiological and biochemical responses to low temperature stress ...

    African Journals Online (AJOL)

    Cuttings of three hybrid clones of P. ussuriensis × P. deltoides were exposed to different low temperatures (cold and freezing) for 24 h, or consecutive low temperatures (5°C, 0 to 120 h), to determine physiological and biochemical responses to cold stress in these woody plants. Soluble sugar and protein contents increased ...

  1. Normally-off GaN Transistors for Power Applications

    International Nuclear Information System (INIS)

    Hilt, O; Bahat-Treidel, E; Brunner, F; Knauer, A; Zhytnytska, R; Kotara, P; Wuerfl, J

    2014-01-01

    Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.

  2. Evolution of low-temperature phases in a low-temperature structural transition of a La cuprate

    International Nuclear Information System (INIS)

    Inoue, Y.; Horibe, Y.; Koyama, Y.

    1997-01-01

    The microstructure produced by a low-temperature structural phase transition in La 1.5 Nd 0.4 Sr 0.1 CuO 4 has been examined by transmission electron microscopy with the help of imaging plates. The low-temperature transition was found to be proceeded not only by the growth of the Pccn/low-temperature-tetragonal phases nucleated along the twin boundary but also by the nucleation and growth of the phases in the interior of the low-temperature-orthorhombic domain. In addition, because the map of the octahedron tilt as an order parameter is not identical to that of the spontaneous strain accompanied by the transition, the microstructure below the transition is understood to be a very complex mixture of the low-temperature phases. copyright 1997 The American Physical Society

  3. Undoped p-type GaN1-xSbx alloys: Effects of annealing

    Science.gov (United States)

    Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

    2016-12-01

    We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

  4. A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

    Science.gov (United States)

    Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

    2017-09-01

    In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D0X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D0X and deep level emission. To determine the nature of the D0X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D0X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D0X emission.

  5. A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation.

    Science.gov (United States)

    Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

    2017-09-08

    In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D 0 X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D 0 X and deep level emission. To determine the nature of the D 0 X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D 0 X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D 0 X emission.

  6. Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Chen, Yen-Liang; Lo, Ikai; Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi; Tsai, Jenn-Kai; Schuber, Ralf; Schaadt, Daniel

    2012-01-01

    We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69″ to 59.43″ for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 × 5 μm 2 with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: ► The samples were grown by plasma-assisted molecular beam epitaxy. ► The GaN epilayer was grown on sapphire substrate. ► The samples were characterized by X-ray diffraction and atomic force microscopy. ► The sample quality was improved by gradient buffer layer.

  7. Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yen-Liang [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Tsai, Jenn-Kai [Department of Electronics Engineering, National Formosa University, Hu-Wei, Yun-Lin County 63208, Taiwan, ROC (China); Schuber, Ralf; Schaadt, Daniel [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

    2012-07-31

    We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69 Double-Prime to 59.43 Double-Prime for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 Multiplication-Sign 5 {mu}m{sup 2} with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: Black-Right-Pointing-Pointer The samples were grown by plasma-assisted molecular beam epitaxy. Black-Right-Pointing-Pointer The GaN epilayer was grown on sapphire substrate. Black-Right-Pointing-Pointer The samples were characterized by X-ray diffraction and atomic force microscopy. Black-Right-Pointing-Pointer The sample quality was improved by gradient buffer layer.

  8. Low-temperature phase transformation in rubidium and cesium superoxides

    International Nuclear Information System (INIS)

    Alikhanov, R.A.; Toshich, B.S.; Smirnov, L.S.

    1980-01-01

    Crystal structures of rubidium and cesium superoxides which are two interpenetrating lattices of metal ions and oxygen molecule ions reveal a number of phase transformations with temperature decrease. Crystal-phase transformations in CsO 2 are 1-2, 2-3 and low temperature one 3-4 at 378, 190 and 10 K. Low temperature transition is considered as the instability of lattice quadrupoles of oxygen molecule ions to phase transformation of the order-disorder type. Calculated temperatures of low temperature phase transformations in PbO 2 and CsO 2 agree with experimental calculations satisfactory [ru

  9. Low temperature safety of lithium-thionyl chloride cells

    Science.gov (United States)

    Subbarao, S.; Deligiannis, F.; Shen, D. H.; Dawson, S.; Halpert, G.

    The use of lithium thionyl chloride cells for low-temperature applications is presently restricted because of their unsafe behavior. An attempt is made in the present investigation to identify the safe/unsafe low temperature operating conditions and to understand the low temperature cell chemistry responsible for the unsafe behavior. Cells subjected to extended reversal at low rate and -40 C were found to explode upon warm-up. Lithium was found to deposit on the carbon cathodes during reversal. Warming up to room temperature may be accelerating the lithium corrosion in the electrolyte. This may be one of the reasons for the cell thermal runaway.

  10. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

    Science.gov (United States)

    Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

    2017-12-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  11. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  12. Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

  13. Low-temperature localization in the transport properties of self ...

    Indian Academy of Sciences (India)

    Transport properties; scattering mechanisms; low temperature localization. 1. Introduction ... Mn4+ appears in these compounds due to the La defi- ciency, leading ... microscopy (SEM) image in figure 1 shows the size and mor- phology of the ...

  14. Detection of dark matter particles with low temperature phonon sensors

    International Nuclear Information System (INIS)

    Sadoulet, B.

    1988-03-01

    Taking as an example the development effort in Berkeley, the author discusses for nonspecialists (Astronomers and Particle Physicists) the promises of phonon sensing at low temperature for the detection of dark matter particles and the difficulties faced. 31 refs

  15. Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2012-01-01

    Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

  16. 2014 Low-Temperature and Coproduced Geothermal Resources Fact Sheet

    Energy Technology Data Exchange (ETDEWEB)

    Tim Reinhardt, Program Manager

    2014-09-01

    As a growing sector of geothermal energy development, the Low-Temperature Program supports innovative technologies that enable electricity production and cascaded uses from geothermal resources below 300° Fahrenheit.

  17. Automation of low temperature positron annihilation spectroscopy system

    International Nuclear Information System (INIS)

    Chaturvedi, T.P.; Venkiteswaran, S.; Pujari, P.K.

    1997-01-01

    This paper describes the automation implemented in the low temperature measurements in positron annihilation spectroscopic studies. This has not only widened the scope of the positron research, but also helps achieve result with better precision. (author). 3 refs., 1 fig

  18. Physiological and biochemical responses to low temperature stress ...

    African Journals Online (AJOL)

    ajl yemi

    2011-11-09

    Nov 9, 2011 ... Levels of electrolyte leak and MDA were lower than in UD189 or UD191. Poplar hybrid clones ... humidity, exposure, and water status and health conditions of ... consecutive low temperature treatment; and to detect variation ...

  19. Highly Effective Thermal Regenerator for Low Temperature Cryocoolers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Future missions to investigate the structure and evolution of the universe require highly efficient, low-temperature cryocoolers for low-noise detector systems. We...

  20. Strong anisotropy in the low temperature Compton profiles of ...

    Indian Academy of Sciences (India)

    able for comparison with theory, the resistivity data in α-Ga at low temperature strongly support this anisotropic ... renormalized free-atom (RFA) model [3], band model [5–7] and quantum Monte Carlo ... probability distribution function.

  1. Buffer mass test - Buffer materials

    International Nuclear Information System (INIS)

    Pusch, R.; Boergesson, L.

    1982-08-01

    Commercial Na bentonite (MX-80) is the clay component of the buffer material in the heater holes as well of the tunnel backfill. Important characteristics are the clay content, liquid limit, X-ray diffraction pattern, water content, and degree of granulation. The ballast material consists of quartz-rich sand and feldspar-rich filler. The preparation of highly compacted bentonite for the near-field isolation of the canister was made by using isostatic compaction technique. The resulting dense bentonite core was cut into regularly shaped blocks which were arranged around each heater and lowered as one unit - heavily instrumented - in the respective deposition holes. For three of the six holes a narrow slot was left open between the bentonite stack and the rock; for the remaining ones a wider slot was chosen with a fill of soft bentonite powder. Both arrangements are expected to yield an ultimate bulk density which is sufficiently high to fulfil the requirement of a negligible permeability and a sufficient swelling pressure as well as heat conductivity, which are the essential parameters. The tunnel backfill, which consists of a mixture of suitably graded ballast material and MX-80 powder, has a considerably lower swelling pressure and heat conductivity, and a higher permeability, all these parameters still within the requirements of the KBS 2 concept. The various zones with different bentonite/sand ratios and the technique to apply them are described in the final part of the report. (Author)

  2. Spectral studies of intermediate species formed in one-electron reactions of bovine liver catalase at room and low temperatures. A comparison with peroxidase reactions

    International Nuclear Information System (INIS)

    Metodiewa, D.; Dunford, H.B.

    1992-01-01

    The reactions of native bovine catalase with superoxide and solvated electrons have been investigated using three different methods for generating these reducing substrates: γ-radiolysis of oxygenated or deaerated buffer solutions in the presence of an OH radical scavenger; either xanthine or acetaldehyde with xanthine oxidase; and low-temperature (77 K) γ-radiolysis of buffered ethylene glycol/water solutions with subsequent annealing of samples at 183 K. (Author)

  3. Low temperature gaseous nitriding of Ni based superalloys

    DEFF Research Database (Denmark)

    Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2010-01-01

    In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

  4. Evaluation Method for Low-Temperature Performance of Lithium Battery

    Science.gov (United States)

    Wang, H. W.; Ma, Q.; Fu, Y. L.; Tao, Z. Q.; Xiao, H. Q.; Bai, H.; Bai, H.

    2018-05-01

    In this paper, the evaluation method for low temperature performance of lithium battery is established. The low temperature performance level was set up to determine the best operating temperature range of the lithium battery using different cathode materials. Results are shared with the consumers for the proper use of lithium battery to make it have a longer service life and avoid the occurrence of early rejection.

  5. Measured Performance of a Low Temperature Air Source Heat Pump

    Energy Technology Data Exchange (ETDEWEB)

    R.K. Johnson

    2013-09-01

    A 4-ton Low Temperature Heat Pump (LTHP) manufactured by Hallowell International was installed in a residence near New Haven, Connecticut and monitored over two winters of operation. After attending to some significant service issues, the heat pump operated as designed. This report should be considered a review of the dual compressor “boosted heat pump” technology. The Low Temperature Heat Pump system operates with four increasing levels of capacity (heat output) as the outdoor temperature drops.

  6. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2015-01-01

    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

  7. INFLUENCE OF A LOW TEMPERATURE AGEING ON THE ...

    African Journals Online (AJOL)

    The effect of a low temperature ageing treatment on the hardness, tensile and corrosion characteristics of sand cast Al-6.5%Si-0.35%Mg alloy was studied. The temper conditions are low temperature ageing at 90oC, 95oC, 100oCand 105oC respectively followed by ageing to 180oC for 2 hrs. This was compared with the ...

  8. Correlation functions of one-dimensional bosons at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, K.K. [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Maillet, J.M. [CNRS, ENS Lyon (France). Lab. de Physique; Slavnov, N.A. [Steklov Mathematical Institute, Moscow (Russian Federation)

    2010-12-15

    We consider the low-temperature limit of the long-distance asymptotic behavior of the finite temperature density-density correlation function in the one-dimensional Bose gas derived recently in the algebraic Bethe Ansatz framework. Our results confirm the predictions based on the Luttinger liquid and conformal field theory approaches. We also demonstrate that the amplitudes arising in this asymptotic expansion at low-temperature coincide with the amplitudes associated with the so-called critical form factors. (orig.)

  9. A low-temperature research facility for space

    International Nuclear Information System (INIS)

    Donnelly, R.J.

    1991-01-01

    The Jet Propulsion Laboratory is proposing to NASA a new initiative to construct a Low Temperature Research Facility for use in space. The facility is described, together with some details of timing and support. An advisory group has been formed which seeks to advise JPL and NASA of the capabilities required in this facility and to invite investigators to propose experiments which require the combination of low temperature and reduced gravity to be successful. (orig.)

  10. Corrosion test by low-temperature coal tar

    Energy Technology Data Exchange (ETDEWEB)

    Ando, S; Yamamoto, S

    1952-01-01

    Corrosive actions of various fractions of low-temperature coal tar against mild steel or Cr 13-steel were compared at their boiling states. Corrosions became severe when the boiling points exceeded 240/sup 0/. The acidic fractions were more corrosive. In all instances, corrosion was excessive at the beginning of immersion testing and then gradually became mild; boiling accelerated the corrosion. Cr 13-steel was corrosion-resistant to low-temperature coal-tar fractions.

  11. Innovative system for delivery of low temperature district heating

    OpenAIRE

    Ianakiev, A; Cui, JM; Garbett, S; Filer, A

    2017-01-01

    An innovative low temperature district heating (LTDH) local network is developed in Nottingham, supported by the REMOURBAN project, part of the H2020 Smart City and Community Lighthouse scheme. It was proposed that a branch emanating from the return pipe of the existing district heating system in Nottingham would be created to use low temperature heating for the first time on such scale in the UK. The development is aimed to extract unused heat from existing district heating system and to mak...

  12. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Science.gov (United States)

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  13. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  14. New developments in low temperature physics New developments in low temperature physics

    Science.gov (United States)

    Hallock, Bob; Paalanenn, Mikko

    2009-04-01

    Below you will find part of the activity report to the IUPAP General Assembly, October 2008, by the present and previous Chairmen of C5. It provides an overview of the most important and recent developments in low temperature physics, much in line with the program of LT25. For the field of experimental low temperature physics, the ability to conduct research has been damaged by the dramatic increase in the price of liquid helium. In the USA, for example, the price of liquid helium has approximately doubled over the past two years. This has led to a reduction in activity in many laboratories as the funding agencies have not quickly increased support in proportion. The increase in price of liquid helium has accelerated interest in the development and use of alternative cooling systems. In particular, pulse-tube coolers are now available that will allow cryostats with modest cooling needs to operate dilution refrigerators without the need for repeated refills of liquid helium from external supply sources. Solid helium research has seen a dramatic resurgence. Torsional oscillator experiments have been interpreted to show that solid helium may undergo a transition to a state in which some of the atoms in the container do not follow the motion of the container, e.g. may be 'supersolid'. The observation is robust, but the interpretation is controversial. The shear modulus of solid helium undergoes a similar signature with respect to temperature. Experiments that should be expected to cause helium to flow give conflicting results. Theory predicts that a perfect solid cannot show supersolid behavior, but novel superfluid-like behavior should be seen in various defects that can exist in the solid, and vorticity may play a significant role. And, recently there have been reports of unusual mass decoupling in films of pure 4He on graphite surfaces as well as 3He- 4He mixture films on solid hydrogen surfaces. These may be other examples of unusual superfluid-like behavior. There

  15. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

    International Nuclear Information System (INIS)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-01-01

    Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

  16. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-02-08

    Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

  17. Rare earths in GaN and ZnO studied with the PAC method; Seltene Erden in GaN und ZnO untersucht mit der PAC-Methode

    Energy Technology Data Exchange (ETDEWEB)

    Nedelec, R.

    2007-07-01

    The present thesis deals with the implantation and annealing behaviour of two examples of large-band-gap semiconductors GaN and ZnO. The studies begin with the annealing behaviour of GaN after the implantation of {sup 172}Lu. For GaN the annealing process begins at low temperatures with the decreasing of the damping of the lattice frequency. At essentially higher temperatures finally the substitunial contribution increases. This behaviour is also observed for other probe nuclei in GaN. For ZnO the behaviour at low temperature is different. Both for {sup 172}Lu and for {sup 181}Hf the damping is already after the implantation very low. The increasement of the substitutional contribution occurs like in GaN at higher temperatures. Thereafter for GaN and ZnO PAC spectra were token up at different measurement temperatures between 25 and 873 K. For {sup 172}Lu in GaN and in ZnO a strong temperature dependence of the lattice field gradient was observed. Also for {sup 181}Hf in ZnO a strong temperature dependence is observed. For {sup 172}Lu by means of a model for the interaction of quadrupole moments of electronic shells with the nucleus a lattice field gradient of {+-}5.9.10{sup 15} Vcm{sup -2} could be determined. For {sup 172}Lu in ZnO the model yields at 293 K a lattice field gradient of +14.10{sup 15} Vcm{sup -2} respectively -13.10{sup 15} Vcm{sup -2}. The corrsponding measurement with {sup 181}Hf yields a lattice field gradient of {+-}5.7.10{sup 15} Vcm{sup -2}.

  18. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  19. Yi-gan san restores behavioral alterations and a decrease of brain glutathione level in a mouse model of schizophrenia.

    Science.gov (United States)

    Makinodan, Manabu; Yamauchi, Takahira; Tatsumi, Kouko; Okuda, Hiroaki; Noriyama, Yoshinobu; Sadamatsu, Miyuki; Kishimoto, Toshifumi; Wanaka, Akio

    2009-01-01

    The traditional Chinese herbal medicine yi-gan san has been used to cure neuropsychological disorders. Schizophrenia can be one of the target diseases of yi-gan san. We aimed at evaluating the possible use of yi-gan san in improving the schizophrenic symptoms of an animal model. Yi-gan san or distilled water was administered to mice born from pregnant mice injected with polyinosinic-polycytidilic acid or phosphate buffered saline. The former is a model of schizophrenia based on the epidemiological data that maternal infection leads to psychotic disorders including schizophrenia in the offspring. Prepulse inhibition and sensitivity to methamphetamine in open field tests were analyzed and the total glutathione content of whole brains was measured. Yi-gan san reversed the decrease in prepulse inhibition, hypersensitivity to methamphetamine and cognitive deficits found in the model mice to the level of control mice. Total glutathione content in whole brains was reduced in the model mice but was restored to normal levels by yi-gan san treatment. These results suggest that yi-gan san may have ameliorating effects on the pathological symptoms of schizophrenia.

  20. Yi-Gan San Restores Behavioral Alterations and a Decrease of Brain Glutathione Level in a Mouse Model of Schizophrenia

    Directory of Open Access Journals (Sweden)

    Manabu Makinodan M.D.

    2009-01-01

    Full Text Available The traditional Chinese herbal medicine yi-gan san has been used to cure neuropsychological disorders. Schizophrenia can be one of the target diseases of yi-gan san. We aimed at evaluating the possible use of yi-gan san in improving the schizophrenic symptoms of an animal model. Yi-gan san or distilled water was administered to mice born from pregnant mice injected with polyinosinic-polycytidilic acid or phosphate buffered saline. The former is a model of schizophrenia based on the epidemiological data that maternal infection leads to psychotic disorders including schizophrenia in the offspring. Prepulse inhibition and sensitivity to methamphetamine in open field tests were analyzed and the total glutathione content of whole brains was measured. Yi-gan san reversed the decrease in prepulse inhibition, hypersensitivity to methamphetamine and cognitive deficits found in the model mice to the level of control mice. Total glutathione content in whole brains was reduced in the model mice but was restored to normal levels by yi-gan san treatment. These results suggest that yi-gan san may have ameliorating effects on the pathological symptoms of schizophrenia.

  1. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  2. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Science.gov (United States)

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  3. Design for a low temperature ion implantation and luminescence cryostat

    International Nuclear Information System (INIS)

    Noonan, J.R.; Kirkpatrick, C.G.; Myers, D.R.; Streetman, B.G.

    1976-01-01

    Several simple design changes of a conventional liquid helium optical Dewar can significantly improve the cryostat's versatility for use in low temperature particle irradiation. A bellows assembly provides precise sample positioning and allows convenient access for electrical connections. A heat exchanger consisting of thin walled tubing with a 'goose neck' bend provides a simple, effective means of cooling the sample as well as excellent thermal isolation of the sample holder from the coolant reservoir during controlled anneals. The addition of a vane-type vacuum valve, optical windows, and a rotatable tailpiece facilitates the study of optical properties of materials following low temperature ion implantation. (author)

  4. Heat Transfer and Cooling Techniques at Low Temperature

    CERN Document Server

    Baudouy, B

    2014-07-17

    The first part of this chapter gives an introduction to heat transfer and cooling techniques at low temperature. We review the fundamental laws of heat transfer (conduction, convection and radiation) and give useful data specific to cryogenic conditions (thermal contact resistance, total emissivity of materials and heat transfer correlation in forced or boiling flow for example) used in the design of cooling systems. In the second part, we review the main cooling techniques at low temperature, with or without cryogen, from the simplest ones (bath cooling) to the ones involving the use of cryocoolers without forgetting the cooling flow techniques.

  5. Instrument for Measuring Thermal Conductivity of Materials at Low Temperatures

    Science.gov (United States)

    Fesmire, James; Sass, Jared; Johnson, Wesley

    2010-01-01

    With the advance of polymer and other non-metallic material sciences, whole new series of polymeric materials and composites are being created. These materials are being optimized for many different applications including cryogenic and low-temperature industrial processes. Engineers need these data to perform detailed system designs and enable new design possibilities for improved control, reliability, and efficiency in specific applications. One main area of interest is cryogenic structural elements and fluid handling components and other parts, films, and coatings for low-temperature application. An important thermal property of these new materials is the apparent thermal conductivity (k-value).

  6. Heat Transfer and Cooling Techniques at Low Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Baudouy, B [Saclay (France)

    2014-07-01

    The first part of this chapter gives an introduction to heat transfer and cooling techniques at low temperature. We review the fundamental laws of heat transfer (conduction, convection and radiation) and give useful data specific to cryogenic conditions (thermal contact resistance, total emissivity of materials and heat transfer correlation in forced or boiling flow for example) used in the design of cooling systems. In the second part, we review the main cooling techniques at low temperature, with or without cryogen, from the simplest ones (bath cooling) to the ones involving the use of cryocoolers without forgetting the cooling flow techniques.

  7. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  8. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  9. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    Science.gov (United States)

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-10-01

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  11. Solitary ionizing surface waves on low-temperature plasmas

    International Nuclear Information System (INIS)

    Vladimirov, S.V.; Yu, M.Y.

    1993-01-01

    It is demonstrated that at the boundary of semi-infinite low-temperature plasma new types of localized ionizing surface wave structures can propagate. The solitary waves are described by an evolution equation similar to the KdV equation, but the solutions differ considerably from that of the latter

  12. Low temperature kinetics of In-Cd solid solution decomposition

    Czech Academy of Sciences Publication Activity Database

    Pal-Val, P.P.; Pal-Val, L.N.; Ostapovets, A.A.; Vaněk, Přemysl

    2008-01-01

    Roč. 137, - (2008), s. 35-42 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z10100520 Keywords : low temperatures * In-based alloys * solid solutions * isothermal structure instability * Young's modulus * electrical resistivity * phase diagrams Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.scientific.net/3-908451-53-1/35/

  13. New polymer electrolytes for low temperature fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Sundholm, F.; Elomaa, M.; Ennari, J.; Hietala, S.; Paronen, M. [Univ. of Helsinki (Finland). Lab. of Polymer Chemistry

    1998-12-31

    Proton conducting polymer membranes for demanding applications, such as low temperature fuel cells, have been synthesised and characterised. Pre-irradiation methods are used to introduce sulfonic acid groups, directly or using polystyrene grafting, in stable, preformed polymer films. The membranes produced in this work show promise for the development of cost-effective, highly conducting membranes. (orig.)

  14. Low Temperature Oxidation of Methane: The Influence of Nitrogen Oxides

    DEFF Research Database (Denmark)

    Bendtsen, Anders Broe; Glarborg, Peter; Dam-Johansen, Kim

    2000-01-01

    by the competition between three reaction paths from CH3 to CH2O. A direct high temperature path (A), a two-step NO2 enhanced low temperature path (B) and a slow three step NO enhanced path (C), which may produce NO2 to activate path B. The negative temperature coefficient behaviour was explained by a competition...

  15. Radioluminescence and thermoluminescence of albite at low temperature

    International Nuclear Information System (INIS)

    Can, N.; Garcia-Guinea, J.; Kibar, R.; Cetin, A.; Ayvacikli, M.; Townsend, P.D.

    2011-01-01

    Feldspar as an archaeological and geological natural material for dating and retrospective dosimetry is receiving more and more attention because of its useful luminescence properties. In this study, the 25-280 K thermoluminescence (TL) and radioluminescence (RL) spectra in albite, which is a component of the two main feldspar series, the alkali feldspar (Na, K)AlSi 3 O 8 and the plagioclases (NaAlSi 3 O 8 -CaAl 2 Si 2 O 8 ) have been presented for aliquots along (001) and (010) crystallographic orientations. There are four main emission bands that are considered to arise from complexes of intrinsic defects linked in larger complexes with impurities such as Na + , Mn 2+ or Fe 3+ ions. The consequence of their association is to produce different luminescence efficiencies that produce wavelength sensitive TL curves. Radioluminescence data at low temperature for albites is distorted by contributions from the TL sites, even when the RL is run in a cooling cycle. This indicates the potential for a far more general problem for analysis of low temperature RL in insulating materials. - Highlights: → TL and RL spectra in albite were presented for different orientations. → There are 4 emission bands that are considered to arise from complexes of intrinsic. → RL data at low temperature for albite is distorted by contributions from TL sites. → This indicates the potential problem for analysis of low temperature RL.

  16. Measuring Systems for Thermometer Calibration in Low-Temperature Range

    Science.gov (United States)

    Szmyrka-Grzebyk, A.; Lipiński, L.; Manuszkiewicz, H.; Kowal, A.; Grykałowska, A.; Jancewicz, D.

    2011-12-01

    The national temperature standard for the low-temperature range between 13.8033 K and 273.16 K has been established in Poland at the Institute of Low Temperature and Structure Research (INTiBS). The standard consists of sealed cells for realization of six fixed points of the International Temperature Scale of 1990 (ITS-90) in the low-temperature range, an adiabatic cryostat and Isotech water and mercury triple-point baths, capsule standard resistance thermometers (CSPRT), and AC and DC bridges with standard resistors for thermometers resistance measurements. INTiBS calibrates CSPRTs at the low-temperature fixed points with uncertainties less than 1 mK. In lower temperature range—between 2.5 K and about 25 K — rhodium-iron (RhFe) resistance thermometers are calibrated by comparison with a standard which participated in the EURAMET.T-K1.1 comparison. INTiBS offers a calibration service for industrial platinum resistance thermometers and for digital thermometers between 77 K and 273 K. These types of thermometers may be calibrated at INTiBS also in a higher temperature range up to 550°C. The Laboratory of Temperature Standard at INTiBS acquired an accreditation from the Polish Centre for Accreditation. A management system according to EN ISO/IEC 17025:2005 was established at the Laboratory and presented on EURAMET QSM Forum.

  17. Recent progress in low-temperature silicon detectors

    International Nuclear Information System (INIS)

    Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

    2003-01-01

    The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

  18. Electron-dislocation interaction at low temperatures. Progress report

    International Nuclear Information System (INIS)

    1978-01-01

    The interaction of mobile dislocations with electrons in copper and copper alloys has shown that dislocation motion in copper, at low temperature, can be treated as an analog of an underdamped oscillator. We have also shown that the viscous drag on mobile dislocations in type II superconductors can be treated as an acoustic attenuation of an elastic wave

  19. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  20. Challenges in Smart Low-Temperature District Heating Development

    DEFF Research Database (Denmark)

    Li, Hongwei; Wang, Stephen Jia

    2014-01-01

    Previous research and development shows that low temperature district heating (LTDH) system is economic feasible for low energy buildings and buildings at sparse areas. Coupling with reduced network temperature and well-designed district heating (DH) networks, LTDH can reduce network heat loss by...

  1. Oregon Low-Temperature-Resource Assessment Program. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    Priest, G.R.; Black, G.L.; Woller, N.M.

    1981-01-01

    Numerous low-temperature hydrothermal systems are available for exploitation throughout the Cascades and eastern Oregon. All of these areas have heat flow significantly higher than crustal averages and many thermal aquifers. In northeastern Oregon, low temperature geothermal resources are controlled by regional stratigraphic aquifers of the Columbia River Basalt Group at shallow depths and possibly by faults at greater depths. In southeastern Oregon most hydrothermal systems are of higher temperature than those of northeastern Oregon and are controlled by high-angle fault zones and layered volcanic aquifers. The Cascades have very high heat flow but few large population centers. Direct use potential in the Cascades is therefore limited, except possibly in the cities of Oakridge and Ashland, where load may be great enough to stimulate development. Absence of large population centers also inhibits initial low temperature geothermal development in eastern Oregon. It may be that uses for the abundant low temperature geothermal resources of the state will have to be found which do not require large nearby population centers. One promising use is generation of electricity from freon-based biphase electrical generators. These generators will be installed on wells at Vale and Lakeview in the summer of 1982 to evaluate their potential use on geothermal waters with temperatures as low as 80/sup 0/C (176/sup 0/F).

  2. Low-temperature magnetic modification of sensitive biological materials

    Czech Academy of Sciences Publication Activity Database

    Pospišková, K.; Šafařík, Ivo

    2015-01-01

    Roč. 142, mar (2015), s. 184-188 ISSN 0167-577X R&D Projects: GA MŠk(CZ) LD13021 Institutional support: RVO:67179843 Keywords : magnetic iron oxides particles * microwave-assisted synthesis * low-temperature magnetic modification * immobilized enzymes Subject RIV: BO - Biophysics Impact factor: 2.437, year: 2015

  3. Chamber for uniaxial pressure application at low temperatures

    International Nuclear Information System (INIS)

    Grillo, M.L.N.; Carmo, L.C.S. do; Picon, A.P.

    1984-08-01

    A chamber for alignment of low temperature ferroelastic domains in crystals by the use of uniaxial stress was built. The system allows the use of EPR and optical techniques, as well as X-ray irradiation at temperatures as low as 77K. (Author) [pt

  4. Frugal Biotech Applications of Low-Temperature Plasma.

    Science.gov (United States)

    Machala, Zdenko; Graves, David B

    2017-09-01

    Gas discharge low-temperature air plasma can be utilized for a variety of applications, including biomedical, at low cost. We term these applications 'frugal plasma' - an example of frugal innovation. We demonstrate how simple, robust, low-cost frugal plasma devices can be used to safely disinfect instruments, surfaces, and water. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Strong anisotropy in the low temperature Compton profiles of ...

    Indian Academy of Sciences (India)

    Compton profiles of momentum distribution of conduction electrons in the orthorhombic phase of -Ga metal at low temperature are calculated in the band model for the three crystallographic directions (100), (010), and (001). Unlike the results at room temperature, previously reported by Lengeler, Lasser and Mair, the ...

  6. Scintillation of sapphire under particle excitation at low temperature

    International Nuclear Information System (INIS)

    Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

    2006-01-01

    The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

  7. Low temperature spin wave dynamics in classical Heisenberg chains

    International Nuclear Information System (INIS)

    Heller, P.; Blume, M.

    1977-11-01

    A detailed and quantitative study of the low-temperature spin-wave dynamics was made for the classical Heisenberg-coupled chain using computer simulation. Results for the spin-wave damping rates and the renormalization of the spin-wave frequencies are presented and compared with existing predictions

  8. Low-temperature plasma techniques in surface modification of biomaterials

    International Nuclear Information System (INIS)

    Feng Xiangfen; Xie Hankun; Zhang Jing

    2002-01-01

    Since synthetic polymers usually can not meet the biocompatibility and bio-functional demands of the human body, surface treatment is a prerequisite for them to be used as biomaterials. A very effective surface modification method, plasma treatment, is introduced. By immobilizing the bio-active molecules with low temperature plasma, polymer surfaces can be modified to fully satisfy the requirements of biomaterials

  9. Potential market and characteristics of low-temperature reactors

    International Nuclear Information System (INIS)

    Lerouge, B.

    1975-01-01

    The low-temperature (100 to 200 deg C) heat market for industrial applications and district heating is very important. Two main studies have been developed: a swimming pool reactor delivering water at 110 deg C and a prestressed concrete vessel reactor delivering water at 200 deg C [fr

  10. Low-temperature enhancement of plasmonic performance in silver films

    Czech Academy of Sciences Publication Activity Database

    Jayanti, S.V.; Park, J.H.; Dejneka, Alexandr; Chvostová, Dagmar; McPeak, K.M.; Chen, X.; Oh, S.H.; Norris, D.J.

    2015-01-01

    Roč. 5, č. 5 (2015), 1147-1155 ISSN 2159-3930 R&D Projects: GA ČR(CZ) GA15-13853S Institutional support: RVO:68378271 Keywords : plasmonic performance * silver films * low temperature * spectroscopic ellipsometry Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.657, year: 2015

  11. Phenomenon of quantum low temperature limit of chemical reaction rates

    International Nuclear Information System (INIS)

    Gol'danskij, V.I.

    1975-01-01

    The influence of quantum-mechanical effects on one of the fundamental laws of chemical kinetics - the Arrhenius law - is considered. Criteria characterising the limits of the low-temperature region where the extent of quantum-mechanical tunnelling transitions exceeds exponentially the transitions over the barrier are quoted. Studies of the low-temperature tunnelling of electrons and hydrogen atoms are briefly mentioned and the history of research on low-temperature radiation-induced solid-phase polymerisation, the development of which led to the discovery of the phenomenon of the low-temperature quantum-mechanical limit for the rates of chemical reactions in relation to the formaldehyde polymerisation reaction, is briefly considered. The results of experiments using low-inertia calorimeters, whereby it is possible to determine directly the average time (tau 0 ) required to add one new link to the polymer chain of formaldehyde during its polymerisation by radiation and during postpolymerisation and to establish that below 80K the increase of tau 0 slows down and that at T approximately equal to 10-4K the time tau 0 reaches a plateau (tau 0 approximately equals 0.01s), are described. Possible explanations of the observed low-temperature limit for the rate of a chemical reaction are critically examined and a semiquantitative explanation is given for this phenomenon, which may be particularly common in combined electronic-confirmational transitions in complex biological molecules and may play a definite role in chemical and biological evolution (cold prehistory of life)

  12. Phenomenon of quantum low temperature limit of chemical reaction rates

    Energy Technology Data Exchange (ETDEWEB)

    Gol' danskii, V I [AN SSSR, Moscow. Inst. Khimicheskoj Fiziki

    1975-12-01

    The influence of quantum-mechanical effects on one of the fundamental laws of chemical kinetics - the Arrhenius Law - is considered. Criteria characterising the limits of the low-temperature region where the extent of quantum-mechanical tunnelling transitions exceeds exponentially the transitions over the barrier are quoted. Studies of the low-temperature tunnelling of electrons and hydrogen atoms are briefly mentioned and the history of research on low-temperature radiation-induced solid-phase polymerization, the development of which led to the discovery of the phenomenon of the low-temperature quantum-mechanical limit for the rates of chemical reactions in relation to the formaldehyde polymerization reaction, is briefly considered. The results of experiments using low-inertia calorimeters, whereby it is possible to determine directly the average time (tau/sub 0/) required to add one new link to the polymer chain of formaldehyde during its polymerization by radiation and during postpolymerization and to establish that below 80K the increase of tau/sub 0/ slows down and that at T approximately equal to 10-4K the time tau/sub 0/ reaches a plateau (tau/sub 0/ approximately equals 0.01s), are described. Possible explanations of the observed low-temperature limit for the rate of a chemical reaction are critically examined and a semiquantitative explanation is given for this phenomenon, which may be particularly common in combined electronic-confirmational transitions in complex biological molecules and may play a definite role in chemical and biological evolution (cold prehistory of life).

  13. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  14. Detection of tmRNA molecules on microarrays at low temperatures using helper oligonucleotides

    Directory of Open Access Journals (Sweden)

    Palta Priit

    2010-04-01

    Full Text Available Abstract Background The hybridization of synthetic Streptococcus pneumoniae tmRNA on a detection microarray is slow at 34°C resulting in low signal intensities. Results We demonstrate that adding specific DNA helper oligonucleotides (chaperones to the hybridization buffer increases the signal strength at a given temperature and thus makes the specific detection of Streptococcus pneumoniae tmRNA more sensitive. No loss of specificity was observed at low temperatures compared to hybridization at 46°C. The effect of the chaperones can be explained by disruption of the strong secondary and tertiary structure of the target RNA by the selective hybridization of helper molecules. The amplification of the hybridization signal strength by chaperones is not necessarily local; we observed increased signal intensities in both local and distant regions of the target molecule. Conclusions The sensitivity of the detection of tmRNA at low temperature can be increased by chaperone oligonucleotides. Due to the complexity of RNA secondary and tertiary structures the effect of any individual chaperone is currently not predictable.

  15. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  16. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-01-01

    We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  17. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    Directory of Open Access Journals (Sweden)

    Shuo-Wei Chen

    2016-04-01

    Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  18. Buffered Electrochemical Polishing of Niobium

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  19. Experiments on Quantum Hall Topological Phases in Ultra Low Temperatures

    International Nuclear Information System (INIS)

    Du, Rui-Rui

    2015-01-01

    This project is to cool electrons in semiconductors to extremely low temperatures and to study new states of matter formed by low-dimensional electrons (or holes). At such low temperatures (and with an intense magnetic field), electronic behavior differs completely from ordinary ones observed at room temperatures or regular low temperature. Studies of electrons at such low temperatures would open the door for fundamental discoveries in condensed matter physics. Present studies have been focused on topological phases in the fractional quantum Hall effect in GaAs/AlGaAs semiconductor heterostructures, and the newly discovered (by this group) quantum spin Hall effect in InAs/GaSb materials. This project consists of the following components: 1) Development of efficient sample cooling techniques and electron thermometry: Our goal is to reach 1 mK electron temperature and reasonable determination of electron temperature; 2) Experiments at ultra-low temperatures: Our goal is to understand the energy scale of competing quantum phases, by measuring the temperature-dependence of transport features. Focus will be placed on such issues as the energy gap of the 5/2 state, and those of 12/5 (and possible 13/5); resistive signature of instability near 1/2 at ultra-low temperatures; 3) Measurement of the 5/2 gaps in the limit of small or large Zeeman energies: Our goal is to gain physics insight of 5/2 state at limiting experimental parameters, especially those properties concerning the spin polarization; 4) Experiments on tuning the electron-electron interaction in a screened quantum Hall system: Our goal is to gain understanding of the formation of paired fractional quantum Hall state as the interaction pseudo-potential is being modified by a nearby screening electron layer; 5) Experiments on the quantized helical edge states under a strong magnetic field and ultralow temperatures: our goal is to investigate both the bulk and edge states in a quantum spin Hall insulator under

  20. Low-Temperature Synthesis Routes to Intermetallic Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond E

    2008-01-08

    Over the past few years, our group has gained expertise at developing low-temperature solution-based synthetic pathways to complex nanoscale solids, with particular emphasis on nanocrystalline intermetallic compounds. Our synthetic capabilities are providing tools to reproducibly generate intermetallic nanostructures with simultaneous control over crystal structure, composition, and morphology. This DOE-funded project aims to expand these capabilities to intermetallic superconductors. This could represent an important addition to the tools that are available for the synthesis and processing of intermetallic superconductors, which traditionally utilize high-temperature, high-pressure, thin film, or gas-phase vacuum deposition methods. Our current knowledge of intermetallic superconductors suggests that significant enhancements could result from the inherent benefits of low-temperature solution synthesis, e.g. metastable phase formation, control over nanoscale morphology to facilitate size-dependent property studies, robust and inexpensive processability, low-temperature annealing and consolidation, and impurity incorporation (for doping, stoichiometry control, flux pinning, and improving the critical fields). Our focus is on understanding the superconducting properties as a function of synthetic route, crystal structure, crystallite size, and morphology, and developing the synthetic tools necessary to accomplish this. This research program can currently be divided into two classes of superconducting materials: intermetallics (transition metal/post transition metal) and metal carbides/borides. Both involve the development and exploitation of low-temperature synthesis routes followed by detailed characterization of structures and properties, with the goal of understanding how the synthetic pathways influence key superconducting properties of selected target materials. Because of the low-temperature methods used to synthesize them and the nanocrystalline morphologies

  1. Analysis of Low-Temperature Utilization of Geothermal Resources

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Brian

    2015-06-30

    Full realization of the potential of what might be considered “low-grade” geothermal resources will require that we examine many more uses for the heat than traditional electricity generation. To demonstrate that geothermal energy truly has the potential to be a national energy source we will be designing, assessing, and evaluating innovative uses for geothermal-produced water such as hybrid biomass-geothermal cogeneration of electricity and district heating and efficiency improvements to the use of cellulosic biomass in addition to utilization of geothermal in district heating for community redevelopment projects. The objectives of this project were: 1) to perform a techno-economic analysis of the integration and utilization potential of low-temperature geothermal sources. Innovative uses of low-enthalpy geothermal water were designed and examined for their ability to offset fossil fuels and decrease CO2 emissions. 2) To perform process optimizations and economic analyses of processes that can utilize low-temperature geothermal fluids. These processes included electricity generation using biomass and district heating systems. 3) To scale up and generalize the results of three case study locations to develop a regionalized model of the utilization of low-temperature geothermal resources. A national-level, GIS-based, low-temperature geothermal resource supply model was developed and used to develop a series of national supply curves. We performed an in-depth analysis of the low-temperature geothermal resources that dominate the eastern half of the United States. The final products of this study include 17 publications, an updated version of the cost estimation software GEOPHIRES, and direct-use supply curves for low-temperature utilization of geothermal resources. The supply curves for direct use geothermal include utilization from known hydrothermal, undiscovered hydrothermal, and near-hydrothermal EGS resources and presented these results at the Stanford

  2. Buffer Zone Fact Sheets

    Science.gov (United States)

    New requirements for buffer zones and sign posting contribute to soil fumigant mitigation and protection for workers and bystanders. The buffer provides distance between the pesticide application site and bystanders, reducing exposure risk.

  3. An evidence of defect gettering in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk; Zhu, J.J.; Wang, Y.T.; Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

    2008-07-01

    The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 deg. C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5x10{sup 15} ions/cm{sup 2} caused the complete quenching of yellow band luminescence.

  4. An evidence of defect gettering in GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Zhu, J.J.; Wang, Y.T.; Yang, H.

    2008-01-01

    The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 deg. C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5x10 15 ions/cm 2 caused the complete quenching of yellow band luminescence

  5. Study on low temperature plasma driven permeation of hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Takizawa, Masayuki [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    It is one of the most important problem in PWI of fusion devices from the point of view of tritium leakage that hydrogen diffuses in the wall of the device and permeates through it, which results in hydrogen being released to the coolant side. In this study, plasma driven permeation experiments were carried out with several kinds of metal membranes in the low temperature plasma where ionic and atomic hydrogen as well as electron existed in order to survey PDP mechanism from the many view points. In addition, incident flux rate from the plasma to the membrane surface was evaluated by calculation analysis. As a result the mechanism of low temperature PDP was found out and described as PDP models. The simulation of the membrane pump system was executed and the system performance was estimated with the models. (author). 135 refs.

  6. NATO Advanced Study Institute on Low Temperature Molecular Spectroscopy

    CERN Document Server

    1996-01-01

    Molecular spectroscopy has achieved rapid and significant progress in recent years, the low temperature techniques in particular having proved very useful for the study of reactive species, phase transitions, molecular clusters and crystals, superconductors and semiconductors, biochemical systems, astrophysical problems, etc. The widening range of applications has been accompanied by significant improvements in experimental methods, and low temperature molecular spectroscopy has been revealed as the best technique, in many cases, to establish the connection between experiment and theoretical calculations. This, in turn, has led to a rapidly increasing ability to predict molecular spectroscopic properties. The combination of an advanced tutorial standpoint with an emphasis on recent advances and new perspectives in both experimental and theoretical molecular spectroscopy contained in this book offers the reader insight into a wide range of techniques, particular emphasis being given to supersonic jet and matri...

  7. Fuel oil from low-temperature carbonization of coal

    Energy Technology Data Exchange (ETDEWEB)

    Thau, A

    1941-01-01

    A review has been given of German developments during the last 20 years. Four methods for the low-temperature carbonization of coal have been developed to the industrial stage; two involving the use of externally heated, intermittent, metallic chamber ovens; and two employing the principle of internal heating by means of a current of gas. Tar from externally heated retorts can be used directly as fuel oil, but that from internally heated retorts requires further treatment. In order to extend the range of coals available for low-temperature carbonization, and to economize metals, an externally heated type of retort constructed of ceramic material has been developed to the industrial stage by T. An excellent coke and a tar that can be used directly as fuel oil are obtained. The properties of the tar obtained from Upper Silesian coal are briefly summarized.

  8. Solution-phase synthesis of nanomaterials at low temperature

    Science.gov (United States)

    Zhu, Yongchun; Qian, Yitai

    2009-01-01

    This paper reviews the solution-phase synthesis of nanoparticles via some routes at low temperatures, such as room temperature route, wave-assisted synthesis (γ-irradiation route and sonochemical route), directly heating at low temperatures, and hydrothermal/solvothermal methods. A number of strategies were developed to control the shape, the size, as well as the dispersion of nanostructures. Using diethylamine or n-butylamine as solvent, semiconductor nanorods were yielded. By the hydrothermal treatment of amorphous colloids, Bi2S3 nanorods and Se nanowires were obtained. CdS nanowires were prepared in the presence of polyacrylamide. ZnS nanowires were obtained using liquid crystal. The polymer poly (vinyl acetate) tubule acted as both nanoreactor and template for the CdSe nanowire growth. Assisted by the surfactant of sodium dodecyl benzenesulfonate (SDBS), nickel nanobelts were synthesized. In addition, Ag nanowires, Te nanotubes and ZnO nanorod arrays could be prepared without adding any additives or templates.

  9. Study on low temperature plasma driven permeation of hydrogen

    International Nuclear Information System (INIS)

    Takizawa, Masayuki

    1998-03-01

    It is one of the most important problem in PWI of fusion devices from the point of view of tritium leakage that hydrogen diffuses in the wall of the device and permeates through it, which results in hydrogen being released to the coolant side. In this study, plasma driven permeation experiments were carried out with several kinds of metal membranes in the low temperature plasma where ionic and atomic hydrogen as well as electron existed in order to survey PDP mechanism from the many view points. In addition, incident flux rate from the plasma to the membrane surface was evaluated by calculation analysis. As a result the mechanism of low temperature PDP was found out and described as PDP models. The simulation of the membrane pump system was executed and the system performance was estimated with the models. (author). 135 refs

  10. Flow processes at low temperatures in ultrafine-grained aluminum

    International Nuclear Information System (INIS)

    Chinh, Nguyen Q.; Szommer, Peter; Csanadi, Tamas; Langdon, Terence G.

    2006-01-01

    Experiments were conducted to evaluate the flow behavior of pure aluminum at low temperatures. Samples were processed by equal-channel angular pressing (ECAP) to give a grain size of ∼1.2 μm and compression samples were cut from the as-pressed billets and tested over a range of strain rates at temperatures up to 473 K. The results show the occurrence of steady-state flow in these highly deformed samples and a detailed analysis gives a low strain rate sensitivity and an activation energy similar to the value for grain boundary diffusion. By using depth-sensing indentation testing and atomic force microscopy, it is shown that grain boundary sliding occurs in this material at low temperatures. This result is attributed to the presence of high-energy non-equilibrium boundaries in the severely deformed samples

  11. Tar bases in low-temperature coal tar

    Energy Technology Data Exchange (ETDEWEB)

    Sugiura, S; Ueno, H; Yokoyama, H

    1951-01-01

    Tar bases were extracted from three fractions, that boil below 260/sup 0/ at 260/sup 0/ to 280/sup 0/, and 280/sup 0/ to 330/sup 0/, respectively, of the low-temperature tar obtained by the carbonization of Ube coal in a Koppers' vertical retort at approximately 750/sup 0/. These were divided, respectively, into three groups, acetate-forming amine, HCl salt-forming bases (I), and CHCl/sub 3/-soluble bases (II), and further fractionally distilled. From the physical and chemical properties of the fractions thus obtained, it was concluded that low-temperature coal tar contained no low boiling pyridine homologues and that, besides higher homologues of pyridine, nonaromatic, more saturated, and less basic compounds of larger atomic weight and smaller refractive index, such as derivatives of pyrrole and indole, also existed as in crude petroleum.

  12. Low Temperature District Heating for Future Energy Systems

    DEFF Research Database (Denmark)

    Schmidt, Dietrich; Kallert, Anna; Blesl, Markus

    2017-01-01

    of the building stock. Low temperature district heating (LTDH) can contribute significantly to a more efficient use of energy resources as well as better integration of renewable energy (e.g. geothermal or solar heat), and surplus heat (e.g. industrial waste heat) into the heating sector. LTDH offers prospects......The building sector is responsible for more than one third of the final energy consumption of societies and produces the largest amount of greenhouse gas emissions of all sectors. This is due to the utilisation of combustion processes of mainly fossil fuels to satisfy the heating demand...... for both the demand side (community building structure) and the supply side (network properties or energy sources). Especially in connection with buildings that demand only low temperatures for space heating. The utilisation of lower temperatures reduces losses in pipelines and can increase the overall...

  13. Characteristic of Low Temperature Carburized Austenitic Stainless Steel

    Science.gov (United States)

    Istiroyah; Pamungkas, M. A.; Saroja, G.; Ghufron, M.; Juwono, A. M.

    2018-01-01

    Low temperature carburizing process has been carried out on austenitic stainless steel (ASS) type AISI 316L, that contain chromium in above 12 at%. Therefore, conventional heat treatment processes that are usually carried out at high temperatures are not applicable. The sensitization process due to chromium migration from the grain boundary will lead to stress corrosion crack and decrease the corrosion resistance of the steel. In this study, the carburizing process was carried out at low temperatures below 500 °C. Surface morphology and mechanical properties of carburized specimens were investigated using optical microscopy, non destructive profilometer, and Vicker microhardness. The surface roughness analysis show the carburising process improves the roughness of ASS surface. This improvement is due to the adsorption of carbon atoms on the surface of the specimen. Likewise, the hardness test results indicate the carburising process increases the hardness of ASS.

  14. On the Interpretation of Low Temperature Calorimetry Data

    DEFF Research Database (Denmark)

    Kjeldsen, Ane Mette; Geiker, Mette Rica

    2008-01-01

    The effect of selected factors and phenomena on Low Temperature Calorimetry (LTC) results has been investigated, in order to determine the possibilities and limitations of using LTC for characterisation of the porosity of cement-based materials. LTC was carried out on a model material with mono......-sized pores of approximately 14 nm saturated with either distilled water or a sodium chloride solution, as well as on water, the salt solution, and an artificial pore solution, alone. It was found that supercooling is unavoidable during the liquid-solid phase transition, and that even at low temperature...... to limit transport of liquid, whereas heating should be undertaken at a low rate to limit the effect of non-equilibrium....

  15. Innovative system for delivery of low temperature district heating

    Directory of Open Access Journals (Sweden)

    Anton Ivanov Ianakiev

    2017-01-01

    Full Text Available An innovative Low Temperature District Heating (LTDH local network is developed in Nottingham, supported by REMOURBAN project, part of the H2020 Smart City and Community Lighthouse scheme. It was proposed that a branch emanating from the return pipe of the of the existing district heating system in Nottingham would be created to use low temperature heating for the first time in UK. The development is aimed to extract wasted (unused heat from existing district heating system and make it more efficient and profitable. Four maisonette blocks of 94 low-raised flats, at Nottingham demo site of the REMOURBAN project will be connected to this new LTDH system. The scheme will provide a primary supply of heat and hot water at approximately 50oC to 60oC. Innovated solutions have been put forward to overcome certain barriers, such as legionella related risks and peak loads during extreme heating seasons and occasional maintenance.

  16. Low-temperature creep of austenitic stainless steels

    Science.gov (United States)

    Reed, R. P.; Walsh, R. P.

    2017-09-01

    Plastic deformation under constant load (creep) in austenitic stainless steels has been measured at temperatures ranging from 4 K to room temperature. Low-temperature creep data taken from past and unreported austenitic stainless steel studies are analyzed and reviewed. Creep at cryogenic temperatures of common austenitic steels, such as AISI 304, 310 316, and nitrogen-strengthened steels, such as 304HN and 3116LN, are included. Analyses suggests that logarithmic creep (creep strain dependent on the log of test time) best describe austenitic stainless steel behavior in the secondary creep stage and that the slope of creep strain versus log time is dependent on the applied stress/yield strength ratio. The role of cold work, strain-induced martensitic transformations, and stacking fault energy on low-temperature creep behavior is discussed. The engineering significance of creep on cryogenic structures is discussed in terms of the total creep strain under constant load over their operational lifetime at allowable stress levels.

  17. Low-temperature random matrix theory at the soft edge

    International Nuclear Information System (INIS)

    Edelman, Alan; Persson, Per-Olof; Sutton, Brian D.

    2014-01-01

    “Low temperature” random matrix theory is the study of random eigenvalues as energy is removed. In standard notation, β is identified with inverse temperature, and low temperatures are achieved through the limit β → ∞. In this paper, we derive statistics for low-temperature random matrices at the “soft edge,” which describes the extreme eigenvalues for many random matrix distributions. Specifically, new asymptotics are found for the expected value and standard deviation of the general-β Tracy-Widom distribution. The new techniques utilize beta ensembles, stochastic differential operators, and Riccati diffusions. The asymptotics fit known high-temperature statistics curiously well and contribute to the larger program of general-β random matrix theory

  18. Low Temperature District Heating for Future Energy Systems

    DEFF Research Database (Denmark)

    Ford, Rufus; Pietruschka, Dirk; Sipilä, Kari

    participants being VTT Technical Research Centre of Finland (VTT), Technical University of Denmark (DTU), Norwegian University of Science and Technology (NTNU), Stuttgart Technology University of Applied Sciences (HFT) and SSE Enterprise in United Kingdom. The demonstration cases described in the report......This report titled “Case studies and demonstrations” is the subtask D report of the IEA DHC|CHP Annex TS1 project “Low Temperature District Heating for Future Energy Systems” carried out between 2013 and 2016. The project was led by Fraunhofer Institute for Building Physics (IBP) with the other...... include examples on low temperature district heating systems, solar heating in a district heating system, heat pump based heat supply and energy storages for both peak load management and for seasonal heat storage. Some demonstrations have been implemented while others are at planning phase...

  19. Exergy and Energy Analysis of Low Temperature District Heating Network

    DEFF Research Database (Denmark)

    Li, Hongwei; Svendsen, Svend

    is in line with a pilot project that is carrying out in Denmark with network supply/return temperature at 55oC/25 oC. The consumer domestic hot water (DHW) demand is supplied with a special designed district heating (DH) storage tank. The space heating (SH) demand is supplied with a low temperature radiator......Low temperature district heating (LTDH) with reduced network supply and return temperature provides better match of the low quality building thermal demand and the low quality waste heat supply. In this paper, an exemplary LTDH network was designed for 30 low energy demand residential houses, which....... The network thermal and hydraulic conditions were simulated under steady state with an in-house district heating network design and simulation code. Through simulation, the overall system energetic and exergetic efficiencies were calculated and the exergy losses for the major district heating system...

  20. Energy and exergy analysis of low temperature district heating network

    DEFF Research Database (Denmark)

    Li, Hongwei; Svendsen, Svend

    2012-01-01

    is designed to supply heating for 30 low energy detached residential houses. The network operational supply/return temperature is set as 55 °C/25 °C, which is in line with a pilot project carried out in Denmark. Two types of in-house substations are analyzed to supply the consumer domestic hot water demand...... energy/exergy losses and increase the quality match between the consumer heating demand and the district heating supply.......Low temperature district heating with reduced network supply and return temperature provides better match of the low quality building heating demand and the low quality heating supply from waste heat or renewable energy. In this paper, a hypothetical low temperature district heating network...

  1. Mechanical behavior and fatigue in polymeric composites at low temperatures

    International Nuclear Information System (INIS)

    Katz, Y.; Bussiba, A.; Mathias, H.

    1986-01-01

    Advanced fiber reinforced polymeric composite materials are often suggested as structural materials at low temperature. In this study, graphite epoxy and Kevlar-49/epoxy systems were investigated. Fatigue behavior was emphasized after establishing the standard monotonic mechanical properties, including fracture resistance parameters at 77, 190, and 296 K. Tension-tension fatigue crack propagation testing was carried out at nominal constant stress intensity amplitudes using precracked compact tensile specimens. The crack tip damage zone was measured and tracked by an electro-potential device, opening displacement gage, microscopic observation, and acoustic emission activity recording. Fractograhic and metallographic studies were performed with emphasis on fracture morphology and modes, failure processes, and description of sequential events. On the basis of these experimental results, the problem of fatigue resistance, including low temperature effects, is analyzed and discussed. The fundamental concepts of fatigue in composites are assessed, particularly in terms of fracture mechanics methods

  2. Low-temperature mobility measurements on CMOS devices

    International Nuclear Information System (INIS)

    Hairpetian, A.; Gitlin, D.; Viswanathan, C.R.

    1989-01-01

    The surface channel mobility of carriers in eta- and rho-MOS transistors fabricated in a CMOS process was accurately determined at low temperatures down to 5 Κ. The mobility was obtained by an accurate measurement of the inversion charge density using a split C-V technique and the conductance at low drain voltages. The split C-V technique was validated at all temperatures using a one-dimensional Poisson solver (MOSCAP), which was modified for low-temperature application. The mobility dependence on the perpendicular electric field for different substrate bias values appears to have different temperature dependence for eta- and rho-channel devices. The electron mobility increases with a decrease in temperature at all gate voltages. On the other hand, the hole mobility exhibits a different temperature behavior depending upon whether the gate voltage corresponds to strong inversion or is near threshold

  3. Thermodynamics of partially confined Fermi gases at low temperature

    International Nuclear Information System (INIS)

    Toms, David J

    2004-01-01

    We examine the behaviour of non-interacting Fermi gases at low temperature. If there is a confining potential present the thermodynamic behaviour is altered from the familiar results for the unconfined gas. The role of de Haas-van Alphen type oscillations that are a consequence of the confining potential is considered. Attention is concentrated on the behaviour of the chemical potential and the specific heat. Results are compared and contrasted with those for an unconfined and a totally confined gas

  4. Study of Plant Waxes Using Low Temperature Method for ESEM

    Czech Academy of Sciences Publication Activity Database

    Neděla, Vilém; Tihlaříková, Eva; Schiebertová, P.; Zajícová, I.; Schwarzerová, K.

    2016-01-01

    Roč. 22, S3 (2016), s. 1180-1181 ISSN 1431-9276 R&D Projects: GA ČR(CZ) GA14-22777S; GA MŠk ED0017/01/01 Grant - others:GA MŠk(CZ) LO1211 Institutional support: RVO:68081731 Keywords : ESEM * plant waxes * low temperature method Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.891, year: 2016

  5. Application of piezoceramic materials in low temperature scanning tunnel microscope

    International Nuclear Information System (INIS)

    Volodin, A.P.; Panich, A.E.

    1989-01-01

    Temperature dependences of the voltage-to-movement conversion coefficients for piezoceramic domestic materials PKR and TsTS-19 are measured using a capacitance dilatometer in the 0.4< T<300K temperature range. Anisotropy of thermal expansion of materials determined by the polarization vector is observed. Some recommendations concerning the use of the given materials in low-temperature scanning tunnel microscopes are given

  6. Account of low temperature hardening in calculation of permissible stresses

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ul'yanenko, A.P.; Gorodyskij, N.I.

    1980-01-01

    Suggested is a calculation scheme of permissible stresses with the account of temperature hardening for steels and alloys, the dependences of strength, plasticity and rupture work of which on cooling temperature do not have threshold changes in a wide range of low temperatures (from 300 to 4.2 K). Application of the suggested scheme is considered on the example of 12Kh18N10T austenitic chromium-nickel steel

  7. Low temperature chemical processing of graphite-clad nuclear fuels

    Science.gov (United States)

    Pierce, Robert A.

    2017-10-17

    A reduced-temperature method for treatment of a fuel element is described. The method includes molten salt treatment of a fuel element with a nitrate salt. The nitrate salt can oxidize the outer graphite matrix of a fuel element. The method can also include reduced temperature degradation of the carbide layer of a fuel element and low temperature solubilization of the fuel in a kernel of a fuel element.

  8. Technological aspects of UO2 sintering at low temperature

    International Nuclear Information System (INIS)

    Thern, Gerardo G.; Dominguez, Carlos A.; Benitez, Ana M.; Marajofsky, Adolfo

    1999-01-01

    Within the Fuel Cycle Program of CNEA, the knowledge that plant personnel has on sintering at low temperature was evaluated, because this process could decrease costs for UO 2 and (U,Gd)O 2 pellets production, simplify the furnace maintenance and facilitate the automation of the production process, specially convenient for uranium recovery. By applying this technology, some companies have achieved production at pilot-scale and irradiated a significant number of pellets. (author)

  9. Aspects of the application of low temperatures in electrical engineering

    Energy Technology Data Exchange (ETDEWEB)

    1968-01-01

    After a short assessment of superconductors and high field coils as well as normal conductors at low temperature, refrigerating units and thermal insulation are discussed. In the case of superconductor direct current cables for 2 by 400 kV, a comparison is made with hvdc overhead lines and it was found that the cost of erection, as well as the annual operating costs, are equivalent for a transmitted load of 2 to 3 GW.

  10. Coulometric titration at low temperatures-nonstoichiometric silver selenide

    OpenAIRE

    Beck, Gesa K.; Janek, Jürgen

    2003-01-01

    A modified coulometric titration technique is described for the investigation of nonstoichiometric phases at low temperatures. It allows to obtain titration curves at temperatures where the conventional coulometric titration technique fails because of too small chemical diffusion coefficients of the mobile component. This method for indirect coulometric titration is applied to silver selenide between -100 and 100 °C. The titration curves are analyzed on the basis of a defect chemical model an...

  11. Performance Limits and Opportunities for Low Temperature Thermal Desalination

    OpenAIRE

    Nayar, Kishor Govind; Swaminathan, Jaichander; Warsinger, David Elan Martin; Lienhard, John H.

    2015-01-01

    Conventional low temperature thermal desalination (LTTD) uses ocean thermal temperature gradients to drive a single stage flash distillation process to produce pure water from seawater. While the temperature difference in the ocean drives distillation and provides cooling in LTTD, external electrical energy is required to pump the water streams from the ocean and to maintain a near vacuum in the flash chamber. In this work, an LTTD process from the literature is compared against, the thermody...

  12. Treatment of low-temperature tar-gas mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Schick, F

    1928-07-04

    Process for the treating and conversion of low-temperature tar-vapor and gas mixtures in the presence of metals or metal oxides as well as bodies of large surface, without previous condensation of the liquid material to be treated, characterized by the treatment taking place with a mixture of desulfurizing metals and metal oxides which, if necessary, are precipitated on carriers and large surface nonmetal cracking catalysts, such as active carbon and silica gel.

  13. Pressurized-helium breakdown at very low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Metas, R J

    1972-06-01

    An investigation of the electrical-breakdown behavior of helium at very low temperatures has been carried out to assist the design and development of superconducting power cables. At very high densities, both liquid and gaseous helium showed an enhancement in electric strength when pressurized to a few atmospheres; conditioned values of breakdown fields then varied between 30 and 45 MV/m. Breakdown processes occurring over a wide range of helium densities are discussed. 24 references.

  14. Low temperature specific heat anomalies in melanins and tumor melanosomes

    Energy Technology Data Exchange (ETDEWEB)

    Mizutani, U [Carnegie--Mellon Univ., Pittsburgh; Massalski, T B; McGinness, J E; Corry, P M

    1976-02-12

    Human malignant melanoma cells obtained at autopsy were used. Data indicate that melanins exhibit a large linear term (50-200 erg g/sup -1/K/sup -2/) and that they seem to undergo a phase transition as indicated by the heat capacity near 1.9/sup 0/K. A table is presented to show low temperature specific heat data for melanin samples. The measurements include two anomalies, a transition and an unusually high linear contribution. (HLW)

  15. Extraction of low-temperature tar by various alcohols

    Energy Technology Data Exchange (ETDEWEB)

    Hara, N; Osawa, M; Azuma, H

    1948-01-01

    MeOH was the most effective of the alcohols tested (MeOH to pentanol) in extracting acid components from low-temperature tar. The optimum concentrations of MeOH were 70 to 80% for 1 extraction and 70 to 75% for repeated or continuous extractions when the solvent-tar ratio was 1:1. By 2 to 3 extractions neutral oil could be separated in about 90% yield including > 3% acidic oil.

  16. Muonium in Al2O3 powder at low temperature

    International Nuclear Information System (INIS)

    Kiefl, R.F.; Warren, J.B.; Oram, C.J; Brewer, J.H.; Harshman, D.R.

    1982-04-01

    Measurements of muonium (μ + e - ) spin relaxation in a finely powdered sample of γ-Al 2 O 3 in a He (or Ne) atmosphere indicate that the muonium atoms escape the powder grains with a high efficiency at low temperatures (T < 30 K). The muonium spin relaxation rate is proportional to the fraction of the powder surface area not covered by adsorbed He (Ne)

  17. Low temperature radiation embrittlement for reactor vessel steels

    International Nuclear Information System (INIS)

    Ginding, I.A.; Chirkina, L.A.

    1978-01-01

    General conceptions of cold brittleness of bcc metals are in a review. Considered are experimental data and theoretical representations about the effect of irradiation conditions, chemical composition, phase and structural constitutions, grain size, mechanical and thermomechanical treatments on low-temperature irradiation embrittlement of reactor vessel steels. Presented are the methods for increasing radiation stability of metals (carbon and Cr-Mo steels) used in manufacturing reactor vessels

  18. Fly ash particles spheroidization using low temperature plasma energy

    OpenAIRE

    Shekhovtsov, V. V.; Volokitin, O. G.; Vitske, Rudolf Evaldovich; Kondratyuk, Alexey Alekseevich

    2016-01-01

    The paper presents the investigations on producing spherical particles 65-110 [mu]m in size using the energy of low temperature plasma (LTP). These particles are based on flow ash produced by the thermal power plant in Seversk, Tomsk region, Russia. The obtained spherical particles have no defects and are characterized by a smooth exterior surface. The test bench is designed to produce these particles. With due regard for plasma temperature field distribution, it is shown that the transition ...

  19. Low-temperature heating systems and public administration

    Energy Technology Data Exchange (ETDEWEB)

    Boerner, H

    1981-06-01

    The even temperature distribution and comfortable climate in rooms heated by low-temperature heating systems is mostly due to one of the preconditions of this type of heating system namely, efficient thermal insulation of the rooms. Thermal insulation is already required as part of the pertinent legal regulations but it is also in the interest of the builder-owner as it will, in the long run, greatly reduce the heating cost.

  20. Low-temperature strain gauges based on silicon whiskers

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2008-08-01

    Full Text Available To create low-temperature strain gauges based on p-type silicon whiskers tensoresistive characteristics of these crystals in 4,2—300 K temperature range were studied. On the basis of p-type Si whiskers with different resistivity the strain gauges for different materials operating at cryogenic temperatures with extremely high gauge factor at 4,2 K were developed, as well as strain gauges operating at liquid helium temperatures in high magnetic fields.

  1. Dynamics of implanted muons at low temperatures in white tin

    International Nuclear Information System (INIS)

    Solt, G.; Zimmermann, U.; Herlach, D.

    2008-01-01

    The low temperature lattice site of the implanted μ + particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2 + was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T=48±2K, resulting in complete delocalization near 60 K. The activation energy for hopping, E a =113±15meV, is substantially higher than that found previously for the equally tetragonal indium

  2. Energy and exergy analysis of low temperature district heating network

    International Nuclear Information System (INIS)

    Li, Hongwei; Svendsen, Svend

    2012-01-01

    Low temperature district heating with reduced network supply and return temperature provides better match of the low quality building heating demand and the low quality heating supply from waste heat or renewable energy. In this paper, a hypothetical low temperature district heating network is designed to supply heating for 30 low energy detached residential houses. The network operational supply/return temperature is set as 55 °C/25 °C, which is in line with a pilot project carried out in Denmark. Two types of in-house substations are analyzed to supply the consumer domestic hot water demand. The space heating demand is supplied through floor heating in the bathroom and low temperature radiators in the rest of rooms. The network thermal and hydraulic conditions are simulated under steady state. A district heating network design and simulation code is developed to incorporate the network optimization procedure and the network simultaneous factor. Through the simulation, the overall system energy and exergy efficiencies are calculated and the exergy losses for the major district heating system components are identified. Based on the results, suggestions are given to further reduce the system energy/exergy losses and increase the quality match between the consumer heating demand and the district heating supply. -- Highlights: ► Exergy and energy analysis for low and medium temperature district heating systems. ► Different district heating network dimensioning methods are analyzed. ► Major exergy losses are identified in the district heating network and the in-house substations. ► Advantages to apply low temperature district heating are highlighted through exergy analysis. ► The influence of thermal by-pass on system exergy/energy performance is analyzed.

  3. National Low-Temperature Neutron-Irradiation Facility

    International Nuclear Information System (INIS)

    Coltman, R.R. Jr.; Klabunde, C.E.; Young, F.W. Jr.

    1983-08-01

    The Materials Sciences Division of the United States Department of Energy will establish a National Low Temperature Neutron Irradiation Facility (NLTNIF) which will utilize the Bulk Shielding Reactor (BSR) located at Oak Ridge National Laboratory. The facility will provide high radiation intensities and special environmental and testing conditions for qualified experiments at no cost to users. This report describes the planned experimental capabilities of the new facility

  4. The future of the low temperature district heating reactor

    International Nuclear Information System (INIS)

    Lu Yingzhong; Wang Dazhong; Ma Changwen; Dong Duo; Tian Jiafu.

    1984-01-01

    In this paper, the role, development and situation of the low temperature district heating reactor (LTDHR) are briefly summarized. There are four types of LTDHR. They are PWR, reactor with boiling in the chimney, organic reactor and swimming pool reactor. The features of these reactors are introduced. The situation and role of the LTDHR in the future of the energy system are also discussed. The experiment on nuclear district heating with the swimming pool reactor in Qinghua Univ. is described briefly. (Author)

  5. Low-temperature field evaporation of Nb3Sn compound

    International Nuclear Information System (INIS)

    Ksenofontov, V.A.; Kul'ko, V.B.; Kutsenko, P.A.

    1986-01-01

    Investigation results on field evaporation of superconducting Nb 3 Sn compound wth A15 lattice are presented. Compound evaporation is shown to proceed in two stages. Evaporation field and ionic composition of evaporating material are determined. It is found out that in strong electric fields compound surface represents niobium skeleton, wich does not form regular image. Comparison of ion-microscopic and calculated images formed by low-temperature field evaporation indicates to possibility of sample surface reconstruction after preferable tin evaporation

  6. Electron microscopic observation at low temperature on superconductors

    International Nuclear Information System (INIS)

    Yokota, Yasuhiro; Hashimoto, Hatsujiro; Yoshida, Hiroyuki.

    1991-01-01

    The authors have observed superconducting materials with a high resolution electron microscope at liquid helium temperature. First, observation was carried out on Nb system intermetallic compounds such as Nb 3 Al and Nb 3 Sn of Al 5 type and Nb 3 Ge of 11 type at extremely low temperature. Next, the observation of high temperature superconductive ceramics in the state of superconductivity was attempted. In this paper, first the development of the liquid helium sample holder for a 400 kV electron microscope to realize the observation is reported. Besides, the sample holder of Gatan Co. and an extremely low temperature, high resolution electron microscope with a superconducting lens are described. The purpose of carrying out the electron microscope observation of superconductors at low temperature is the direct observation of the crystalline lattice image in the state of superconductivity. Also the structural transformation from tetragonal crystals to rhombic crystals in Al 5 type superconductors can be observed. The results of observation are reported. (K.I.)

  7. Future directions in geobiology and low-temperature geochemistry

    Science.gov (United States)

    Freeman, Katherine H.; Goldhaber, M.B.

    2011-01-01

    Humanity is confronted with an enormous challenge, as succinctly stated by the late Steven Schneider (2001; quoted by Jantzen 2004*): “Humans are forcing the Earth’s environmental systems to change at a rate that is more advanced than their knowledge of the consequences.” Geobiologists and low-temperature geochemists characterize material from the lithosphere, hydrosphere, atmosphere, and biosphere to understand processes operating within and between these components of the Earth system from the atomic to the planetary scale. For this reason, the interwoven disciplines of geobiology and low-temperature geochemistry are central to understanding and ultimately predicting the behavior of these life-sustaining systems. We present here comments and recommendations from the participants of a workshop entitled “Future Directions in Geobiology and Low-Temperature Geochemistry,” hosted by the Carnegie Institution of Washington, Geophysical Laboratory, Washington, DC, on 27–28 August 2010. The goal of the workshop was to suggest ways to leverage the vast intellectual and analytical capabilities of our diverse scientific community to characterize the Earth’s past, present, and future geochemical habitat as we enter the second decade of what E. O. Wilson dubbed “the century of the environment.”

  8. The 2017 Plasma Roadmap: Low temperature plasma science and technology

    Science.gov (United States)

    Adamovich, I.; Baalrud, S. D.; Bogaerts, A.; Bruggeman, P. J.; Cappelli, M.; Colombo, V.; Czarnetzki, U.; Ebert, U.; Eden, J. G.; Favia, P.; Graves, D. B.; Hamaguchi, S.; Hieftje, G.; Hori, M.; Kaganovich, I. D.; Kortshagen, U.; Kushner, M. J.; Mason, N. J.; Mazouffre, S.; Mededovic Thagard, S.; Metelmann, H.-R.; Mizuno, A.; Moreau, E.; Murphy, A. B.; Niemira, B. A.; Oehrlein, G. S.; Petrovic, Z. Lj; Pitchford, L. C.; Pu, Y.-K.; Rauf, S.; Sakai, O.; Samukawa, S.; Starikovskaia, S.; Tennyson, J.; Terashima, K.; Turner, M. M.; van de Sanden, M. C. M.; Vardelle, A.

    2017-08-01

    Journal of Physics D: Applied Physics published the first Plasma Roadmap in 2012 consisting of the individual perspectives of 16 leading experts in the various sub-fields of low temperature plasma science and technology. The 2017 Plasma Roadmap is the first update of a planned series of periodic updates of the Plasma Roadmap. The continuously growing interdisciplinary nature of the low temperature plasma field and its equally broad range of applications are making it increasingly difficult to identify major challenges that encompass all of the many sub-fields and applications. This intellectual diversity is ultimately a strength of the field. The current state of the art for the 19 sub-fields addressed in this roadmap demonstrates the enviable track record of the low temperature plasma field in the development of plasmas as an enabling technology for a vast range of technologies that underpin our modern society. At the same time, the many important scientific and technological challenges shared in this roadmap show that the path forward is not only scientifically rich but has the potential to make wide and far reaching contributions to many societal challenges.

  9. Low temperature storage test phase 2 : identification of problem species

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2009-12-15

    The use of renewable fuels such as biodiesel, in motor vehicle fuels is expected to grow rapidly in North America as a result of governmental mandates. Biodiesel is a fuel component made from plant and animal feedstocks via a transesterification process. The fatty acid methyl esters (FAME) of biodiesel have cloud points that range from 5 degrees C to -15 degrees C. The poor low temperature performance of blends containing FAME must be understood in order to avoid operability issues. This paper presented the results of several testing programs conducted by researchers to investigate filter plugging in biodiesel fuels caused by high levels of saturated monoglycerides. The low temperature storage stability of 57 biodiesel fuels comprised of B5 and B20 made with canola methyl ester (CME), soybean methyl ester (SME), tallow methyl ester (TME) and palm methyl ester (PME) was investigated. Filter blocking tests were conducted to assess storage stability. Deposits from the blends were analyzed using gas chromatography and mass spectrometry (GC-MS) in order to identify the problem species. Results of the study confirmed the deleterious impact of saturated mono-glycerides in FAME on the low temperature operability of filters in fuel handling systems. 11 refs., 7 tabs., 5 figs. 9 appendices.

  10. Low-Temperature Co-Fired Unipoled Multilayer Piezoelectric Transformers.

    Science.gov (United States)

    Gao, Xiangyu; Yan, Yongke; Carazo, Alfredo Vazquez; Dong, Shuxiang; Priya, Shashank

    2018-03-01

    The reliability of piezoelectric transformers (PTs) is dependent upon the quality of fabrication technique as any heterogeneity, prestress, or misalignment can lead to spurious response. In this paper, unipoled multilayer PTs were investigated focusing on high-power composition and co-firing profile in order to provide low-temperature synthesized high-quality device measured in terms of efficiency and power density. The addition of 0.2 wt% CuO into Pb 0.98 Sr 0.02 (Mg 1/3 Nb 2/3 ) 0.06 (Mn 1/3 Nb 2/3 ) 0.06 (Zr 0.48 Ti 0.52 ) 0.88 O 3 (PMMnN-PZT) reduces the co-firing temperature from 1240 °C to 930 °C, which allows the use of Ag/Pd inner electrode instead of noble Pt inner electrode. Low-temperature synthesized material was found to exhibit excellent piezoelectric properties ( , , %, pC/N, and °C). The performance of the PT co-fired with Ag/Pd electrode at 930 °C was similar to that co-fired at 1240 °C with Pt electrode (25% reduction in sintering temperature). Both high- and low-temperature synthesized PTs demonstrated 5-W output power with >90% efficiency and 11.5 W/cm 3 power density.

  11. Sucrose Phosphate Synthase and Sucrose Accumulation at Low Temperature 1

    Science.gov (United States)

    Guy, Charles L.; Huber, Joan L. A.; Huber, Steven C.

    1992-01-01

    The influence of growth temperature on the free sugar and sucrose phosphate synthase content and activity of spinach (Spinacia oleracea) leaf tissue was studied. When plants were grown at 25°C for 3 weeks and then transferred to a constant 5°C, sucrose, glucose, and fructose accumulated to high levels during a 14-d period. Predawn sugar levels increased from 14- to 20-fold over the levels present at the outset of the low-temperature treatment. Sucrose was the most abundant free sugar before, during, and after exposure to 5°C. Leaf sucrose phosphate synthase activity was significantly increased by the low-temperature treatment, whereas sucrose synthase and invertases were not. Synthesis of the sucrose phosphate synthase subunit was increased during and after low-temperature exposure and paralleled an increase in the steady-state level of the subunit. The increases in sucrose and its primary biosynthetic enzyme, sucrose phosphate synthase, are discussed in relation to adjustment of metabolism to low nonfreezing temperature and freezing stress tolerance. Images Figure 1 Figure 2 Figure 3 PMID:16652990

  12. 12th International Workshop on Low Temperature Electronics

    International Nuclear Information System (INIS)

    2017-01-01

    The present volume of the Journal of Physics: Conference Series represents contributions from participants of the 12th International Workshop on Low Temperature Electronics held in Tempe, Arizona, USA from September 18-21, 2016. The conference was organized by the School of Earth and Space Exploration at Arizona State University.The International Workshop on Low Temperature Electronics (WOLTE) is a biennial conference devoted to the presentation and exchange of the most recent advances in the field of low temperature electronics and its applications. This international forum is open to everyone in the field.The technical program included oral presentations and posters on fundamental properties of cryogenic materials, cryogenic transistors, quantum devices and systems, astronomy and physics instrumentation, and fabrication of cryogenic devices. More than 50 scientists and engineers from various academic, government, and industrial institutions in Europe, Asia, and the Americas attended the conference.We would like to thank all speakers for their presentations and all attendees for their participation. We would also like to express our sincerest gratitude to our sponsors: Lake Shore Cryotronics, ASU NewSpace, ASU School of Earth and Space Exploration, and IRA A. Fulton Schools of Engineering for making this conference possible. (paper)

  13. The 2017 Plasma Roadmap: Low temperature plasma science and technology

    International Nuclear Information System (INIS)

    Adamovich, I; Baalrud, S D; Bogaerts, A; Bruggeman, P J; Cappelli, M; Colombo, V; Czarnetzki, U; Ebert, U; Eden, J G; Favia, P; Graves, D B; Hamaguchi, S; Hieftje, G; Hori, M

    2017-01-01

    Journal of Physics D: Applied Physics published the first Plasma Roadmap in 2012 consisting of the individual perspectives of 16 leading experts in the various sub-fields of low temperature plasma science and technology. The 2017 Plasma Roadmap is the first update of a planned series of periodic updates of the Plasma Roadmap. The continuously growing interdisciplinary nature of the low temperature plasma field and its equally broad range of applications are making it increasingly difficult to identify major challenges that encompass all of the many sub-fields and applications. This intellectual diversity is ultimately a strength of the field. The current state of the art for the 19 sub-fields addressed in this roadmap demonstrates the enviable track record of the low temperature plasma field in the development of plasmas as an enabling technology for a vast range of technologies that underpin our modern society. At the same time, the many important scientific and technological challenges shared in this roadmap show that the path forward is not only scientifically rich but has the potential to make wide and far reaching contributions to many societal challenges. (topical review)

  14. Low-temperature phase diagram of YbBiPt

    International Nuclear Information System (INIS)

    Movshovich, R.; Lacerda, A.; Canfield, P.C.; Thompson, J.D.; Fisk, Z.

    1994-01-01

    Resistivity measurements are reported on the cubic heavy-fermion compound YbBiPt at ambient and hydrostatic pressures to ∼19 kbar and in magnetic fields to 1 T. The phase transition at T c =0.4 K is identified by a sharp rise in resistivity. That feature is used to build low-temperature H-T and P-T phase diagrams. The phase boundary in the H-T plane follows the weak-coupling BCS expression remarkably well from T c to T c /4, while small hydrostatic pressure of ∼1 kbar suppresses the low-temperature phase entirely. These effects of hydrostatic pressure and magnetic field on the phase transition are consistent with an spin-density-wave (SDW) formation in a very heavy electron band at T=0.4 K. Outside of the SDW phase at low temperature, hydrostatic pressure increases the T 2 coefficient of resistivity, signaling an increase in heavy-fermion correlations with hydrostatic pressure. The residual resistivity decreases with pressure, contrary to trends in other Yb heavy-fermion compounds

  15. Muon nuclear fusion and low temperature nuclear fusion

    International Nuclear Information System (INIS)

    Nagamine, Kanetada

    1990-01-01

    Low temperature (or normal temperature) nuclear fusion is one of the phenomena causing nuclear fusion without requiring high temperature. In thermal nuclear fusion, the Coulomb barrier is overcome with the help of thermal energy, but in the low temperature nuclear fusion, the Coulomb barrier is neutralized by the introduction of the particles having larger mass than electrons and negative charges, at this time, if two nuclei can approach to the distance of 10 -13 cm in the neutral state, the occurrence of nuclear fusion reaction is expected. As the mass of the particles is heavier, the neutral region is smaller, and nuclear fusion is easy to occur. The particles to meet this purpose are the electrons within substances and muons. The research on muon nuclear fusion became suddenly active in the latter half of 1970s, the cause of which was the discovery of the fact that the formation of muons occurs resonantly rapidly in D-T and D-D systems. Muons are the unstable elementary particles having the life of 2.2 μs, and they can have positive and negative charges. In the muon catalyzed fusion, the muons with negative charge take part. The principle of the muon catalyzed fusion, its present status and future perspective, and the present status of low temperature nuclear fusion are reported. (K.I.)

  16. A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Korkmaz, Şadan

    2018-01-01

    We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

  17. Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

    DEFF Research Database (Denmark)

    Kopylov, Oleksii; Shirazi, Roza; Svensk, O.

    2012-01-01

    We have studied optical properties of single In0.1Ga0.9N quantum wells with GaN barriers in close proximity to the wafer surface (... thickness of 3nm for achieving highest brightness emitters. At low temperature, we observe a behaviour that suggests that some surface states act as trapping centres for carriers rather than as a non-radiative recombination channel. Temperature dependence of the photoluminescence decay curves shows...

  18. GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

    Science.gov (United States)

    Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro

    2018-03-20

    Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7  dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

  19. Power generation from low-temperature heat source

    Energy Technology Data Exchange (ETDEWEB)

    Lakew, Amlaku Abie

    2012-07-01

    The potential of low-temperature heat sources for power production has been discussed for decades. The diversity and availability of low-temperature heat sources makes it interesting for power production. The thermodynamic power cycle is one of the promising technologies to produce electricity from low-temperature heat sources. There are different working fluids to be used in a thermodynamic power cycle. Working fluid selection is essential for the performance of the power cycle. Over the last years, different working fluid screening criteria have been used. In broad speaking the screening criteria can be grouped as thermodynamic performance, component size requirement, economic performance, safety and environmental impact. Screening of working fluids at different heat source temperatures (80-200 Celsius degrees) using thermodynamic performance (power output and exergy efficiency) and component size (heat exchanger and turbine) is investigated. It is found that the 'best' working fluid depends on the criteria used and heat source temperature level. Transcritical power cycles using carbon dioxide as a working fluid is studied to produce power at 100 Celsius degrees. Carbon dioxide is an environmentally friendly refrigerant. The global warming potential of carbon dioxide is 1. Furthermore, because of its low critical temperature (31 Celsius degrees), carbon dioxide can operate in a transcritical power cycle for lower heat source temperatures. A transcritical configuration avoids the problem of pinching which otherwise would happened in subcritical power cycle. In the process, better temperature matching is achieved and more heat is extracted. Thermodynamic analysis of transcritical cycle is performed; it is found that there is an optimal operating pressure for highest net power output. The pump work is a sizable fraction of the work produced by the turbine. The effect of efficiency deterioration of the pump and the turbine is compared. When the

  20. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

    Science.gov (United States)

    Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

    2018-06-08

    Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands.

    Science.gov (United States)

    Kumar, Mukesh; Pasha, S K; Shibin Krishna, T C; Singh, Avanish Pratap; Kumar, Pawan; Gupta, Bipin Kumar; Gupta, Govind

    2014-08-21

    We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at low temperature by N2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 °C) followed by nitridation (2 keV) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices.

  2. Polarization of stacking fault related luminescence in GaN nanorods

    Directory of Open Access Journals (Sweden)

    G. Pozina

    2017-01-01

    Full Text Available Linear polarization properties of light emission are presented for GaN nanorods (NRs grown along [0001] direction on Si(111 substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.

  3. Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate

    International Nuclear Information System (INIS)

    Kumar, Praveen; Kuyyalil, Jithesh; Shivaprasad, S. M.

    2010-01-01

    High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7x7. Three stable surface phases induced by Ga adsorption, viz., (1x1), (6.3x6.3), and (√3x√3)R30 deg., are employed as templates to grow epitaxial (0001) GaN thin films. GaN grown on Si(√3x√3)R30 deg. -Ga is found to be highly crystalline with intense (0002) x-ray diffraction and photoluminescence peaks with low full width at half maximum, low surface roughness, and stoichiometric surface composition. The high quality of these GaN films formed at a low temperature of 400 deg. C is explained by the integral (x2) lattice matching between the unit cell of GaN and the (√3x√3) phase. The experiments demonstrate a plausible approach of adsorbate induced surface modifications as templates for III-V hetroepitaxy on Si surfaces.

  4. Improved Thermal-Insulation Systems for Low Temperatures

    Science.gov (United States)

    Fesmire, James E.; Augustynowicz, Stanislaw D.

    2003-01-01

    Improved thermal-insulation materials and structures and the techniques for manufacturing them are undergoing development for use in low-temperature applications. Examples of low-temperature equipment for which these thermal insulation systems could provide improved energy efficiency include storage tanks for cryogens, superconducting electric-power-transmission equipment, containers for transport of food and other perishable commodities, and cold boxes for low-temperature industrial processes. These systems could also be used to insulate piping used to transfer cryogens and other fluids, such as liquefied natural gas, refrigerants, chilled water, crude oil, or low-pressure steam. The present thermal-insulation systems are layer composites based partly on the older class of thermal-insulation systems denoted generally as multilayer insulation (MLI). A typical MLI structure includes an evacuated jacket, within which many layers of radiation shields are stacked or wrapped close together. Low-thermal-conductivity spacers are typically placed between the reflection layers to keep them from touching. MLI can work very well when a high vacuum level (less than 10(exp-4) torr) is maintained and utmost care is taken during installation, but its thermal performance deteriorates sharply as the pressure in the evacuated space rises into the soft vacuum range [pressures greater than 0.1 torr (greater than 13 Pa)]. In addition, the thermal performance of MLI is extremely sensitive to mechanical compression and edge effects and can easily decrease from one to two orders of magnitude from its ideal value even when the MLI is kept under high vacuum condition. The present thermal-insulation systems are designed to perform well under soft vacuum level, in particular the range of 1 to 10 torr. They are also designed with larger interlayer spacings to reduce vulnerability to compression (and consequent heat leak) caused by installation and use. The superiority of these systems is the

  5. Low-Temperature Baseboard Heaters in Built Environments

    Energy Technology Data Exchange (ETDEWEB)

    Ploskic, Adnan

    2010-10-15

    The European Union has adopted a plan to decrease 20 % of total energy consumption through improved energy efficiency by 2020. One way of achieving this challenging goal may be to use efficient water-based heating systems supplied by heat pumps or other sustainable systems. The goal of this research was to analyze and improve the thermal performance of water-based baseboard heaters at low-temperature water supply. Both numerical (CFD) and analytical simulations were used to investigate the heat efficiency of the system. An additional objective of this work was to ensure that the indoor thermal comfort was satisfied in spaces served by such a low-temperature heating system. Analyses showed that it was fully possible to cover both transmission and ventilation heat losses using baseboard heaters supplied by 45 deg C water flow. The conventional baseboards, however, showed problems in suppressing the cold air down-flow created by 2.0 m high glazing and an outdoor temperature of -12 deg C. The draught discomfort at ankle level was slightly above the upper limit recommended by international and national standards. On the other hand, thermal baseboards with integrated ventilation air supply showed better ability to neutralize cold downdraught at the same height and conditions. Calculations also showed that the heat output from the integrated system with one ventilation inlet was approximately twice as high as that of the conventional one. The general conclusion from this work was that low temperature baseboards, especially with integrated ventilation air supply, are an efficient heating system and able to be combined with devices that utilize the low-quality sustainable energy sources such as heat pumps

  6. Silk-Quality, Spinnability and Low Temperature Behavior

    Science.gov (United States)

    2015-12-02

    inert  atmosphere  (N2   gas   flow  rate  of  100  mL/min).  Changes   in  weight  percentage  during   temperature...Performance 3. DATES COVERED (From - To) 01-06-2012 to 31-05-2015 4. TITLE AND SUBTITLE Silk-Quality, Spinnability and Low Temperature Behaviour 5a...deploy the huge range in mechanical behaviour between different silk species and intra-species varieties. In particular, I set out to formulate a

  7. Design for ASIC reliability for low-temperature applications

    Science.gov (United States)

    Chen, Yuan; Mojaradi, Mohammad; Westergard, Lynett; Billman, Curtis; Cozy, Scott; Burke, Gary; Kolawa, Elizabeth

    2005-01-01

    In this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.

  8. Engineered Nanostructured MEA Technology for Low Temperature Fuel Cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yimin

    2009-07-16

    The objective of this project is to develop a novel catalyst support technology based on unique engineered nanostructures for low temperature fuel cells which: (1) Achieves high catalyst activity and performance; (2) Improves catalyst durability over current technologies; and (3) Reduces catalyst cost. This project is directed at the development of durable catalysts supported by novel support that improves the catalyst utilization and hence reduce the catalyst loading. This project will develop a solid fundamental knowledge base necessary for the synthetic effort while at the same time demonstrating the catalyst advantages in Direct Methanol Fuel Cells (DMFCs).

  9. Design and Modelling of Small Scale Low Temperature Power Cycles

    DEFF Research Database (Denmark)

    Wronski, Jorrit

    he work presented in this report contributes to the state of the art within design and modelling of small scale low temperature power cycles. The study is divided into three main parts: (i) fluid property evaluation, (ii) expansion device investigations and (iii) heat exchanger performance......-oriented Modelica code and was included in the thermo Cycle framework for small scale ORC systems. Special attention was paid to the valve system and a control method for variable expansion ratios was introduced based on a cogeneration scenario. Admission control based on evaporator and condenser conditions...

  10. Characterization of commercial supercapacitors for low temperature applications

    OpenAIRE

    Iwama, Etsuro; Taberna, Pierre-Louis; Azais, Philippe; Brégeon, Laurent; Simon, Patrice

    2012-01-01

    International audience; Electrochemical characterizations at low temperature and floating tests have been performed on 600F commercial supercapacitor (SC) for acetonitrile (AN)-based and AN + methyl acetate (MA) mixed electrolytes. From −40 to +20 °C, AN electrolyte showed slightly higher capacitance than those of AN + MA mixed electrolytes (25 and 33 vol.% of MA). At −55 °C, however, AN electrolyte did not cycle at all, while MA mixed electrolyte normally cycled with a slight decrease in the...

  11. Low temperature catalytic combustion of natural gas - hydrogen - air mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Newson, E; Roth, F von; Hottinger, P; Truong, T B [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1999-08-01

    The low temperature catalytic combustion of natural gas - air mixtures would allow the development of no-NO{sub x} burners for heating and power applications. Using commercially available catalysts, the room temperature ignition of methane-propane-air mixtures has been shown in laboratory reactors with combustion efficiencies over 95% and maximum temperatures less than 700{sup o}C. After a 500 hour stability test, severe deactivation of both methane and propane oxidation functions was observed. In cooperation with industrial partners, scaleup to 3 kW is being investigated together with startup dynamics and catalyst stability. (author) 3 figs., 3 refs.

  12. New insights in the low-temperature oxidation of acetylene

    DEFF Research Database (Denmark)

    Wang, Bing-Yin; Liu, Yue-Xi; Weng, Jun-Jie

    2017-01-01

    This work presents new experimental data of C2H2 low-temperature oxidation for equivalence ratios Φ= 0.5–3.0 in a newly designed jet-stirred reactor over a temperature range of 600–1100K at atmospheric pressure with residence time corresponding from 1.94 to 1.06s. Mole fraction profiles of 17...... intermediates including aromatic compounds such as toluene, styrene and ethylbenzene were quantified. A detailed kinetic mechanism involving 295 species and 1830 reactions was established to predict the oxidation of C2H2 and formation of PAH. In developing the mechanism, particular attention was paid...

  13. A low temperature aluminizing treatment of hot work tool steel

    Energy Technology Data Exchange (ETDEWEB)

    Matijevic, B., E-mail: bozidar.matijevic@fsb.hr [University of Zagreb, Faculty of Mechanical Engineering and Naval Architecture, Zagreb (Croatia)

    2010-07-01

    Conventional aluminizing processes by pack cementation are typically carried out at elevated temperatures. A low temperature powder aluminizing technology was applied to hot tool steel H13. The aluminizing treating temperature was from 550 to 620°C. Effects of temperature and time on the microstructure and phase evolution were investigated. Also, the intermetallic layer thickness was measured in the aluminized layer of a steel substrate. The cross-sectional microstructures, the aluminized layer thickness and the oxide layer were studied. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), glow discharge optical spectroscopy (GDOS) were applied to observe the cross-sections and the distribution of elements. (author)

  14. A LOW TEMPERATURE ALUMINIZING TREATMENT OF HOT WORK TOOL STEEL

    OpenAIRE

    Matijević, Božidar

    2013-01-01

    Conventional aluminizing processes by pack cementation are typically carried out at elevated temperatures. A low temperature powder aluminizing technology was applied to the X40CrMoV5-1 hot tool steel. The aluminizing temperature was from 550 °C to 620 °C. Effects of temperature and time on the microstructure and phase evolution were investigated. Also, the intermetallic layer thickness was measured in the aluminized layer of a steel substrate. The cross-sectional microstructures, the alumini...

  15. Postmortem magnetic resonance imaging dealing with low temperature objects

    International Nuclear Information System (INIS)

    Kobayashi, Tomoya; Shiotani, Seiji; Isobe, Tomonori

    2010-01-01

    In Japan, the medical examiner system is not widespread, the rate of autopsy is low, and many medical institutions therefore perform postmortem imaging using clinical equipment. Postmortem imaging is performed to clarify cause of death, select candidates for autopsy, make a guide map for autopsy, or provide additional information for autopsy. Findings are classified into 3 categories: cause of death and associated changes, changes induced by cardiopulmonary resuscitation, and postmortem changes. Postmortem magnetic resonance imaging shows characteristic changes in signal intensity related to low body temperature after death; they are low temperature images. (author)

  16. Sea water desalination utilizing waste heat by low temperature evaporation

    International Nuclear Information System (INIS)

    Raha, A.; Srivastava, A.; Rao, I.S.; Majumdar, M.; Srivastava, V.K.; Tewari, P.K.

    2007-01-01

    Economics of a process is controlled by management of energy and resources. Fresh water has become most valued resource in industries. Desalination is a process by which fresh water resource is generated from sea water or brackish water, but it is an energy intensive process. The energy cost contributes around 25-40% to the total cost of the desalted water. Utilization of waste heat from industrial streams is one of the ecofriendly ways to produce low cost desalted water. Keeping this in mind Low Temperature Evaporation (LTE) desalination technology utilizing low quality waste heat in the form of hot water (as low as 50 deg C) or low pressure steam (0.13 bar) has been developed for offshore and land based applications to produce high purity water (conductivity < 2μS/cm) from sea water. The probability of the scale formation is practically eliminated by operating it at low temperature and controlling the brine concentration. It also does not require elaborate chemical pretreatment of sea water except chlorination, so it has no environmental impact. LTE technology has found major applications in nuclear reactors where large quantity of low quality waste heat is available to produce high quality desalted water for make up water requirement replacing conventional ion exchange process. Successful continuous operation of 30 Te/day LTE desalination plant utilizing waste heat from nuclear research reactor has demonstrated the safety, reliability, extreme plant availability and economics of nuclear desalination by LTE technology. It is also proposed to utilize waste heat from Main Heat Transport (MHT) purification circuit of Advanced Heavy Water Reactor (AHWR) to produce about 250 Te/ day high quality desalinated water by Low Temperature Evaporation (LTE) process for the reactor make up and plant utilization. Recently we have commissioned a 50 Te/day 2-effect low temperature desalination plant with cooling tower where the specific energy and cooling water requirement are

  17. Programming Enhancements for Low Temperature Thermal Decomposition Workstation

    Energy Technology Data Exchange (ETDEWEB)

    Igou, R.E.

    1998-10-01

    This report describes a new control-and-measurement system design for the Oak Ridge Y-12 Plant's Low Temperature Thermal Decomposition (LTTD) process. The new design addresses problems with system reliability stemming from equipment obsolescence and addresses specific functional improvements that plant production personnel have identified, as required. The new design will also support new measurement techniques, which the Y-12 Development Division has identified for future operations. The new techniques will function in concert with the original technique so that process data consistency is maintained.

  18. Aspects of Low Temperature Irradiation in Neutron Activation Analysis

    International Nuclear Information System (INIS)

    Brune, D.

    1968-08-01

    Neutron irradiation of the sample while frozen in a cooling device inserted in a reactor channel has been carried out in the analysis of iodine in aqueous samples as well as of mercury in biological tissue and water. For the simultaneous irradiation of a large number of aqueous solutions the samples were arranged in a suitable geometry in order to avoid mutual flux perturbation effects. The influence of the neutron temperature on the activation process has been discussed. Potential applications of the low temperature irradiation technique are outlined

  19. The Fungal Spores Survival Under the Low-Temperature Plasma

    Science.gov (United States)

    Soušková, Hana; Scholtz, V.; Julák, J.; Savická, D.

    This paper presents an experimental apparatus for the decontamination and sterilization of water suspension of fungal spores. The fungicidal effect of stabilized positive and negative corona discharges on four fungal species Aspergillus oryzae, Clacosporium sphaerospermum, Penicillium crustosum and Alternaria sp. was studied. Simultaneously, the slower growing of exposed fungal spores was observed. The obtained results are substantially different in comparison with those of the analogous experiments performed with bacteria. It may be concluded that fungi are more resistant to the low-temperature plasma.

  20. Utilization of low temperature heat for environmentally friendly electricity production

    DEFF Research Database (Denmark)

    Andreasen, Jesper Graa; Elmegaard, Brian; Haglind, Fredrik

    2014-01-01

    the benefits of using mixtures compared to pure fluids as working fluids in organic Rankine cycles. In order to do so, thermodynamic and economic analyses are carried out, first on an overall cycle level, and next on component level including detailed modelling of heat exchangers, pumps and expanders involving...... project collaborators with expertise in these areas. In addition to this, novel innovative cycle layouts are developed with the aim of increasing the economic feasibility of utilizing low temperature heat. As an example, this can be achieved by implementing separators in the power cycle to create optimal...

  1. Peculiarities of luminescence of low-temperature-deformed cadmium sulfides

    Energy Technology Data Exchange (ETDEWEB)

    Negrij, V.D.; Osip' yan, Yu.A. (AN SSSR, Chernogolovka. Inst. Fiziki Tverdogo Tela)

    1982-02-01

    Spatially resolved photoluminescence of CdS crystals deformed at low temperatures is investigated. It is revealed that production and movement of certain dislocations, i. e. microplastic deformation take place in the crystal under the effect of uniaxial loading F >= 10 kG/mm/sup 3/ at 6 K. Dislocations during their movement in the sliding planes produce specific defects in the crystalline lattice which, being the effective centres of irradiation recombination with characteristic radiation spectrum are presented in the form of luminescent traces which passed through the dislocation crystal. A group of symmetry of these centers is determined by means of piesospectroscopic investigations of the obtained radiation spectrum.

  2. A low temperature aluminizing treatment of hot work tool steel

    International Nuclear Information System (INIS)

    Matijevic, B.

    2010-01-01

    Conventional aluminizing processes by pack cementation are typically carried out at elevated temperatures. A low temperature powder aluminizing technology was applied to hot tool steel H13. The aluminizing treating temperature was from 550 to 620°C. Effects of temperature and time on the microstructure and phase evolution were investigated. Also, the intermetallic layer thickness was measured in the aluminized layer of a steel substrate. The cross-sectional microstructures, the aluminized layer thickness and the oxide layer were studied. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), glow discharge optical spectroscopy (GDOS) were applied to observe the cross-sections and the distribution of elements. (author)

  3. Industrial applications of low-temperature plasma physics

    International Nuclear Information System (INIS)

    Chen, F.F.

    1995-01-01

    The application of plasma physics to the manufacturing and processing of materials may be the new frontier of our discipline. Already partially ionized discharges are used in industry, and the performance of plasmas has a large commercial and technological impact. However, the science of low-temperature plasmas is not as well developed as that of high-temperature, collisionless plasmas. In this paper several major areas of application are described and examples of forefront problems in each are given. The underlying thesis is that gas discharges have evolved beyond a black art, and that intellectually challenging problems with elegant solutions can be found. copyright 1995 American Institute of Physics

  4. Low-temperature catalytic conversion of carbonaceous materials

    Directory of Open Access Journals (Sweden)

    Tabakaev Roman B.

    2015-01-01

    Full Text Available Laws of the rate of carbon conversion in steam atmosphere at a temperature in modes of the catalytic low-temperature treatment of peat, brown coal, semi-coke from peat and brown coal are obtained by experiments. Increasing of the rate of carbon conversion in temperature range up to 500 °C is achieved by using of catalysts. The possibility of using results is associated with the burners, a working zone of which is porous filling from carbonaceous particles.

  5. Programming Enhancements for Low Temperature Thermal Decomposition Workstation

    International Nuclear Information System (INIS)

    Igou, R.E.

    1998-01-01

    This report describes a new control-and-measurement system design for the Oak Ridge Y-12 Plant's Low Temperature Thermal Decomposition (LTTD) process. The new design addresses problems with system reliability stemming from equipment obsolescence and addresses specific functional improvements that plant production personnel have identified, as required. The new design will also support new measurement techniques, which the Y-12 Development Division has identified for future operations. The new techniques will function in concert with the original technique so that process data consistency is maintained

  6. Aspects of Low Temperature Irradiation in Neutron Activation Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Brune, D

    1968-08-15

    Neutron irradiation of the sample while frozen in a cooling device inserted in a reactor channel has been carried out in the analysis of iodine in aqueous samples as well as of mercury in biological tissue and water. For the simultaneous irradiation of a large number of aqueous solutions the samples were arranged in a suitable geometry in order to avoid mutual flux perturbation effects. The influence of the neutron temperature on the activation process has been discussed. Potential applications of the low temperature irradiation technique are outlined.

  7. Anomalous low-temperature desorption from preirradiated rare gas solids

    International Nuclear Information System (INIS)

    Savchenko, E.V.; Gumenchuk, G.B.; Yurtaeva, E.M.; Belov, A.G.; Khyzhniy, I.V.; Frankowski, M.; Beyer, M.K.; Smith-Gicklhorn, A.M.; Ponomaryov, A.N.; Bondybey, V.E.

    2005-01-01

    The role for the exciton-induced defects in the stimulation of anomalous low-temperature desorption of the own lattice atoms from solid Ar and Ne preirradiated by an electron beam is studied. The free electrons from shallow traps-structural defects-was monitored by the measurements of a yield of the thermally induced exoelectron emission (TSEE). The reaction of recombination of self-trapped holes with electrons is considered as a source of energy needed for the desorption of atoms from the surface of preirradiated solids. A key part of the exciton-induced defects in the phenomenon observed is demonstrated

  8. Redox Buffer Strength

    Science.gov (United States)

    de Levie, Robert

    1999-04-01

    The proper functioning of enzymes in bodily fluids requires that the pH be maintained within rather narrow limits. The first line of defense against large pH fluctuations in such fluids is the passive control provided by the presence of pH buffers. The ability of pH buffers to stabilize the pH is indicated by the buffer value b introduced in 1922 by van Slyke. It is equally important for many enzymes that the redox potential is kept within a narrow range. In that case, stability of the potential is most readily achieved with a redox buffer. In this communication we define the redox buffer strength by analogy with acid-base buffer strength.

  9. Low-temperature thermal properties of yttrium and lutetium dodecaborides

    International Nuclear Information System (INIS)

    Czopnik, A; Shitsevalova, N; Pluzhnikov, V; Krivchikov, A; Paderno, Yu; Onuki, Y

    2005-01-01

    The heat capacity (C p ) and dilatation (α) of YB 12 and LuB 12 are studied. C p of the zone-melted YB 12 tricrystal is measured in the range 2.5-70 K, of the zone-melted LuB 12 single crystal in the range 0.6-70 K, and of the LuB 12 powder sample in the range 4.3-300 K; α of the zone-melted YB 12 tricrystal and LuB 12 single crystals is measured in the range 5-200 K. At low temperatures a negative thermal expansion (NTE) is revealed for both compounds: for YB 12 at 50-70 K, for LuB 12 at 10-20 K and 60-130 K. Their high-temperature NTE is a consequence of nearly non-interacting freely oscillating metal ions (Einstein oscillators) in cavities of a simple cubic rigid Debye lattice formed by B 12 cage units. The Einstein temperatures are ∼254 and ∼164 K, and the Debye temperatures are ∼1040 K and ∼1190 K for YB 12 and LuB 12 respectively. The LuB 12 low-temperature NTE is connected with an induced low-energy defect mode. The YB 12 superconducting transition has not been detected up to 2.5 K

  10. NTD germanium: a novel material for low-temperature bolometers

    International Nuclear Information System (INIS)

    Haller, E.E.; Palaio, N.P.; Rodder, M.; Hansen, W.L.; Kreysa, E.

    1982-06-01

    Six samples of ultra-pure (absolute value N/sub A/ - N/sub D/ absolute value less than or equal to 10 11 cm -3 ), single-crystal germanium have been neutron transmutation doped with neutron doses between 7.5 x 10 16 and 1.88 x 10 18 cm -2 . After thermal annealing at 400 0 C for six hours in a pure argon atmosphere, the samples have been characterized with Hall effect and resistivity measurements between 300 and 0.3 K. Our results show that the resistivity in the low temperature, hopping conduction regime can be approximated with rho = rho 0 exp(Δ/T). The three more heavily doped samples show values for rho 0 and Δ ranging from 430 to 3.3 Ω cm and from 4.9 to 2.8 K, respectively. The excellent reproducibility of neutron transmutation doping and the values of rho 0 and Δ make NTD Ge a prime candidate for the fabrication of low temperature, low noise bolometers. The large variation in the tabulated values of the thermal neutron cross sections for the different germanium isotopes makes it clear that accurate measurements of these cross-sections for well defined neutron energy spectra would be highly desirable

  11. Three-particle recombination at low temperature: QED approach

    International Nuclear Information System (INIS)

    Bhattacharyya, S.; Roy, A.

    2001-01-01

    A theoretical study of three-body recombination of proton in presence of a spectator electron with electronic beam at near-zero temperature is presented using field theory and invariant Lorentz gauge. Contributions from the Feynman diagrams of different orders give an insight into the physics of the phenomena. Recombination rate coefficient is obtained for low lying principal quantum number n = 1 to 10. At a fixed ion beam temperature (300 K) recombination rate coefficient is found to increase in general with n, having a flat and a sharp peak at quantum states 3 to 5, respectively. In absence of any theoretical and experimental results for low temperature formation of H-atom by three-body recombination at low lying quantum states, we have presented the theoretical results of Stevefelt and group for three-body recombination of deuteron with electron along with the present results. Three-body recombination of antihydrogen in antiproton-positron plasma is expected to yield similar result as that for three-body recombination of hydrogen formation in proton-electron plasma. The necessity for experimental investigation of low temperature three-body recombination at low quantum states is stressed. (author)

  12. The physics of the low-temperature plasma in Czechoslovakia

    International Nuclear Information System (INIS)

    Kracik, J.

    1985-01-01

    A survey is given of low-temperature plasma research in Czechoslovakia since 1954 and its main results are pointed out. In the first years, various processes in electric discharges and electromagnetic acceleration of plasma clusters were studied at Czechoslovak universities and in the Institute of Physics. In the study of ionization waves, Czechoslovak physicists achieved world priority. Later on, low-temperature plasma investigation began in the Institute of Plasma Physics, founded in 1959. The issues of plasma interaction with the solid state and plasma applications in plasma chemistry were studied mainly by its Department of Applied Plasma Physics. The main effort of this group, transferred recently to the Institute of Physics, is aimed at thin film production and plasma-surface interactions; similar experimental studies are also carried out at universities in Brno and Bratislava. Last but not least, arc spraying of powder materials using water-cooled plasmatrons is being developed by the Department of Plasma Technology of the Institute of Plasma Physics. (J.U.)

  13. Measured Performance of a Low Temperature Air Source Heat Pump

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, R. K. [Johnson Research LLC, Pueblo West, CO (United States)

    2013-09-01

    A 4-ton Low Temperature Heat Pump (LTHP) manufactured by Hallowell International was installed in a residence near New Haven, Connecticut and monitored over two winters of operation. After attending to some significant service issues, the heat pump operated as designed. This report should be considered a review of the dual compressor 'boosted heat pump' technology. The Low Temperature Heat Pumpsystem operates with four increasing levels of capacity (heat output) as the outdoor temperature drops. The system was shown to select capacity correctly, supplying the appropriate amount of heat to the house across the full range of outdoor temperatures. The system's Coefficient of Performance (Seasonal COP, or SCOP) over two entire winters was calculated, based on measured data, to be 3.29over the first winter and 2.68 over the second winter. A second seasonal efficiency calculation by a different method yielded a SCOP of 2.78 for the first winter and 2.83 for the second winter. This second seasonal efficiency calculation was determined by comparing measured heat pump energy use to the in situ energy use with resistance heat alone. This method is the ratio of the slopes of thedaily energy use load lines.

  14. Low temperature irradiation facility at Kyoto University Reactor (KUR)

    International Nuclear Information System (INIS)

    Atobe, Kozo; Okada, Moritami; Yoshida, Hiroyuki; Kodaka, Hisao; Miyata, Kiyomi.

    1977-01-01

    A new refrigeration system has been substituted to the low temperature irradiation facility at KUR instead of the previous one, since April in 1975. The model 1204 CTi He liquifier was designed to be modified for the refrigerator with the capacity of 30 watts at 10 K. The refrigeration capacity of 38 watts at 10 K was defined using a special cryostat and transfer-tubes, and the lowest temperature of about 18 K was measured using the irradiation loop without reactor operation. The reconstructed facility enables us to hold the many specimens simultaneously in the sample chamber of the irradiation loop at about 25 K during reactor operation of 5 MW. The irradiation dose has been reached about 6.6 x 10 16 n sub(f)/cm 2 and 6.1 x 10 17 n sub(th)/cm 2 with the normal reactor operation cycle of up to 77 hours. The stable operation condition of the machine and the special safety system for the refrigeration system enable us to maintain easily the facility with a constant operation condition for such a long time irradiation. Many kinds of low temperature neutron irradiation experiments are carried out using the facility, which techniques are partially reported. (auth.)

  15. Low-temperature tar and oil: properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Heinze, R

    1942-01-01

    In Germany the value of low-temperature tar is largely dependent on its fuel fractions; these vary with the coal and the method of carbonization (external heating or recirculated gases). Brown-coal tars can be processed by distillation, cracking under pressure, hydrogenation under pressure (largest volume of tar is processed by this method) and by solvent extraction, with EtOH, SO/sub 2/, or phenol. Each of these processes is discussed in detail. In the pressure-hydrogenation process, 1.25 kilogram of brown-coal tar yields approximately 1 kilogram of gasoline with an octane number of 60 to 70. Low-temperature tars from bituminous coals can be hydrogenated readily but are not well adapted to solvent extraction. Attempts should be made to produce tar approximating the desired characteristics for fuel directly from the carbonizing apparatus. For laboratory carbonization tests, an approximation to results secured by externally heated retorts is secured by using an insert consisting of a series of perforated trays in the 200-gram Fischer aluminum retort; this reduces the capacity to 100 gram. Fractional condensation is used to separate heavy oil, middle oil, and liquor; low-boiling products are condensed at -20/sup 0/ by solid CO/sub 2/.

  16. Brittle fracture tests at low temperature for transport cask materials

    International Nuclear Information System (INIS)

    Kosaki, Akio; Ito, Chihiro; Arai, Taku; Saegusa, Toshiari

    1993-01-01

    The IAEA Regulations for the Safe Transport of Radioactive Material were revised in 1985, and brittle fracture assessment at low temperature for transport packages are now required. This report discusses the applicability of the actual method for brittle fracture assessment of type-B transport cask materials used in JAPAN. The necessity of brittle fracture assessment at low temperature was estimated for each material of type-B transport casks used in Japan and the applicability was investigated. Dynamic fracture toughness values, K Id (J Id ), and RT NDT values of Low-Mn Carbon Steels, that are SA 350 Gr.LF1 Modify and SA 516 Gr.70 material which used in type-B transport cask body, were also obtained to check whether or not an easier and conventional test method, that prescribed in ASME CODE SECTION III, can be substituted for the dynamic fracture test method. And for bolt materials, which include 1.8Ni-0.8Cr-0.3Mo Carbon Steel and type 630 H Stainless Steel, toughness data were obtained for reference. (J.P.N.)

  17. Analysis of optimal design of low temperature economizer

    Science.gov (United States)

    Song, J. H.; Wang, S.

    2017-11-01

    This paper has studied the Off-design characteristic of low temperature economizer system based on thermodynamics analysis. Based on the data from one 1000 MW coal-fired unit, two modes of operation are contrasted and analyzed. One is to fix exhaust gas temperature and the other one is to take into account both of the average temperature difference and the exhaust gas temperature. Meanwhile, the cause of energy saving effect change is explored. Result shows that: in mode 1, the amount of decrease in coal consumption reduces from 1.11 g/kWh (under full load) to 0.54 g/kWh (under half load), and in mode 2, when the load decreases from 90% to 50%, the decrease in coal consumption reduces from 1.29 g/kWh to 0.84 g/kWh. From the result, under high load, the energy saving effect is superior, and under lower work load, energy saving effect declines rapidly when load is reduced. When load changes, the temperature difference of heat transfer, gas flow, the flue gas heat rejection and the waste heat recovery change. The energy saving effect corresponding changes result in that the energy saving effect under high load is superior and more stable. However, rational adjustment to the temperature of outlet gas can alleviate the decline of the energy saving effect under low load. The result provides theoretical analysis data for the optimal design and operation of low temperature economizer system of power plant.

  18. Flare pits wastes remediation by low temperature oxidation

    International Nuclear Information System (INIS)

    Catalan, L. J. L.; Jamaluddin, A. K. M.; Mehta, R.; Moore, R. G.; Okazawa, N.; Ursenbach, M.

    1997-01-01

    The remediation of contaminated soil in oilfield sites, flare pits in particular, is subject to strict environmental regulations. Most current remediation techniques such as biological or thermal treatment are not particularly effective in highly contaminated sites, or effective only at costs that are considered prohibitive. This contribution describes a cost-effective method for the treatment of contaminated soil in-situ. The proposed treatment involves low temperature oxidation which converts the hydrocarbons in the contaminated soil to inert coke. In laboratory studies contaminated soil was oxidized with air at temperatures between 150 degrees C and 170 degrees C for three weeks. After the three week treatment extractable hydrocarbon levels were reduced to less than 0.1 per cent. Bioassays also demonstrated that toxicity associated with hydrocarbons was eliminated. Salts and metals remaining in the soil after treatment were removed by leaching with water. Low temperature oxidation requires no special equipment; it can occur under conditions and with equipment that are readily available in an oilfield setting. 5 refs., 8 tabs., 7 figs

  19. Material for electrodes of low temperature plasma generators

    Science.gov (United States)

    Caplan, Malcolm; Vinogradov, Sergel Evge'evich; Ribin, Valeri Vasil'evich; Shekalov, Valentin Ivanovich; Rutberg, Philip Grigor'evich; Safronov, Alexi Anatol'evich

    2008-12-09

    Material for electrodes of low temperature plasma generators. The material contains a porous metal matrix impregnated with a material emitting electrons. The material uses a mixture of copper and iron powders as a porous metal matrix and a Group IIIB metal component such as Y.sub.2O.sub.3 is used as a material emitting electrons at, for example, the proportion of the components, mass %: iron: 3-30; Y.sub.2O.sub.3:0.05-1; copper: the remainder. Copper provides a high level of heat conduction and electric conductance, iron decreases intensity of copper evaporation in the process of plasma creation providing increased strength and lifetime, Y.sub.2O.sub.3 provides decreasing of electronic work function and stability of arc burning. The material can be used for producing the electrodes of low temperature AC plasma generators used for destruction of liquid organic wastes, medical wastes, and municipal wastes as well as for decontamination of low level radioactive waste, the destruction of chemical weapons, warfare toxic agents, etc.

  20. Potential of low-temperature nuclear heat applications

    International Nuclear Information System (INIS)

    1986-12-01

    At present, more than one third of the fossil fuel currently used is being consumed to produce space heating and to meet industrial needs in many countries of the world. Imported oil still represents a large portion of this fossil fuel and despite its present relatively low price future market evolutions with consequent upward cost revisions cannot be excluded. Thus the displacement of the fossil fuel by cheaper low-temperature heat produced in nuclear power plants is a matter which deserves careful consideration. Technico-economic studies in many countries have shown that the use of nuclear heat is fully competitive with most of fossil-fuelled plants, the higher investment costs being offset by lower production cost. Another point in favour of heat generation by nuclear source is its indisputable advantage in terms of benefits to the environment. The IAEA activity plans for 1985-86 concentrate on information exchange with specific emphasis on the design criteria, operating experience, safety requirements and specifications of heat-only reactors, co-generation plants and existing power plants backfitted for additional heat applications. The information gained up to 1985 was discussed during the Advisory Group Meeting on the Potential of Low-Temperature Nuclear Heat Applications held in the Federal Institute for Reactor Research, Wuerenlingen, Switzerland in September 1985 and, is included in the present Technical Document

  1. NMR study of CeTe at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Hinderer, J. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland)]. E-mail: hinderer@phys.ethz.ch; Weyeneth, S.M. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Weller, M. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Gavilano, J.L. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Felder, E. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Hulliger, F. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Ott, H.R. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland)

    2006-05-01

    We present {sup 125}Te NMR measurements on CeTe powder at temperatures between 1 and 150K and in magnetic fields between 5 and 8T. CeTe is a rocksalt-type intermetallic compound. It orders antiferromagnetically at T{sub N}{approx}2.2K with a much reduced ordered moment [H.R. Ott, J.K. Kjems, F. Hulliger, Phys. Rev. Lett. 42 20 (1979) 1378]. From our low-temperature NMR spectra we infer the presence of at least three inequivalent Te sites at low temperatures. Considering the crystal structure this result is completely unexpected. The linewidths and the Knight shifts of the individual lines are significantly different and increase substantially with decreasing temperature. They follow the temperature dependence of the magnetic susceptibility above 20K. Above T{sub N}, hyperfine fields of 1.6, 0.8 and 0.0T at the three Te sites per Bohr magneton of Ce moment are deduced from Knight shift vs. magnetic susceptibility data. These values are typical for transferred hyperfine fields via conduction electrons.

  2. Final Report - Low Temperature Combustion Chemistry And Fuel Component Interactions

    Energy Technology Data Exchange (ETDEWEB)

    Wooldridge, Margaret [Univ. of Michigan, Ann Arbor, MI (United States)

    2017-02-24

    Recent research into combustion chemistry has shown that reactions at “low temperatures” (700 – 1100 K) have a dramatic influence on ignition and combustion of fuels in virtually every practical combustion system. A powerful class of laboratory-scale experimental facilities that can focus on fuel chemistry in this temperature range is the rapid compression facility (RCF), which has proven to be a versatile tool to examine the details of fuel chemistry in this important regime. An RCF was used in this project to advance our understanding of low temperature chemistry of important fuel compounds. We show how factors including fuel molecular structure, the presence of unsaturated C=C bonds, and the presence of alkyl ester groups influence fuel auto-ignition and produce variable amounts of negative temperature coefficient behavior of fuel ignition. We report new discoveries of synergistic ignition interactions between alkane and alcohol fuels, with both experimental and kinetic modeling studies of these complex interactions. The results of this project quantify the effects of molecular structure on combustion chemistry including carbon bond saturation, through low temperature experimental studies of esters, alkanes, alkenes, and alcohols.

  3. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

    2018-05-01

    GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

  4. Organellar Calcium Buffers

    Science.gov (United States)

    Prins, Daniel; Michalak, Marek

    2011-01-01

    Ca2+ is an important intracellular messenger affecting many diverse processes. In eukaryotic cells, Ca2+ storage is achieved within specific intracellular organelles, especially the endoplasmic/sarcoplasmic reticulum, in which Ca2+ is buffered by specific proteins known as Ca2+ buffers. Ca2+ buffers are a diverse group of proteins, varying in their affinities and capacities for Ca2+, but they typically also carry out other functions within the cell. The wide range of organelles containing Ca2+ and the evidence supporting cross-talk between these organelles suggest the existence of a dynamic network of organellar Ca2+ signaling, mediated by a variety of organellar Ca2+ buffers. PMID:21421925

  5. Plasmon enhanced green GaN light-emitting diodes - Invited paper

    DEFF Research Database (Denmark)

    Ou, Haiyan; Fadil, Ahmed; Iida, Daisuke

    in spectral design, more compact etc. TheIII-nitride (GaN, InNetc.) semiconductors are attracting a lot of research effort because the combination of both could emit light with wavelength range from UV to infrared. Basically one material platform could provide all the solutions to light sources.However huge...... nanosphere lithography. For both cases, emission enhancement is demonstrated. For periodic Ag nanoparicles, aphotoluminescence enhancement of 2.7 is observed with a nanodisk diameter of 330 nm.It is found that an optimalpitch exists for a given particle size.For the random Ag nanoparticles,low temperature...

  6. Calorimetric low temperature detectors for heavy ion physics

    Energy Technology Data Exchange (ETDEWEB)

    Egelhof, P.; Kraft-Bermuth, S. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)]|[Mainz Univ. (Germany). Inst. fuer Physik

    2005-05-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ({sup 4}He.. {sup 238}U). Excellent results with respect to energy resolution, {delta}E/E ranging from 1 to 5 x 10{sup -3} even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of {sup 236}U by one order of magnitude and to determine the up to date smallest isotope ratio of {sup 236}U/{sup 238}U = 6.1 x 10{sup -12} in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also

  7. Calorimetric low temperature detectors for heavy ion physics

    International Nuclear Information System (INIS)

    Egelhof, P.; Kraft-Bermuth, S.; Mainz Univ.

    2005-07-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ( 4 He.. 238 U). Excellent results with respect to energy resolution, ΔE/E ranging from 1 to 5 x 10 -3 even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of 236 U by one order of magnitude and to determine the up to date smallest isotope ratio of 236 U/ 238 U = 6.1 x 10 -12 in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also provides considerable advantage for X

  8. Solid density, low temperature plasma formation in a capillary discharge

    International Nuclear Information System (INIS)

    Kania, D.R.; Jones, L.A.; Maestas, M.D.; Shepherd, R.L.

    1987-01-01

    This work discusses the ability of the authors to produce solid density, low temperature plasmas in polyurethane capillary discharges. The initial capillary diameter is 20 μm. The plasma is produced by discharging a one Ohm parallel plate waterline and Marx generator system through the capillary. A peak current of 340 kA in 300 ns heats the inner wall of the capillary, and the plasma expands into the surrounding material. The authors studied the evolution of the discharge using current and voltage probes, axial and radial streak photography, axial x-ray diode array and schlieren photography, and have estimated the peak temperature of the discharge to be approximately 10 eV and the density to be near 10/sup 23/cm/sup -3/. This indicates that the plasma may approach the strongly coupled regime. They discuss their interpretation of the data and compare their results with theoretical models of the plasma dynamics

  9. 0-D study of the compression of low temperature spheromaks

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.; Hulse, R.A.; Zweibel, E.G.

    1985-09-01

    Compression of low temperature spheromak plasmas has been studied with the aid of a O-D two-fluid computer code. It is found that in a plasma which is radiation dominated, the electron temperature can be increased by up to a factor of seven for a compression of a factor of two, provided the temperature is above some critical value (approx.25eV) and the electron density particle confinement time product n/sub e/tau/sub p/ greater than or equal to 1 x 10 9 s/cm 3 . If the energy balance is dominated by particle confinement losses rather than radiation losses, the effect of compression is to raise the temperature as T/sub e/ approx.C/sup 6/5/, for constant tau/sub p/

  10. Containment for low temperature district nuclear-heating reactor

    International Nuclear Information System (INIS)

    He Shuyan; Dong Duo

    1992-03-01

    Integral arrangement is adopted for Low Temperature District Nuclear-heating Reactor. Primary heat exchangers, control rod drives and spent fuel elements are put in the reactor pressure vessel together with reactor core. Primary coolant flows through reactor core and primary heat exchangers in natural circulation. Primary coolant pipes penetrating the wall of reactor pressure vessel are all of small diameters. The reactor vessel constitutes the main part of pressure boundary of primary coolant. Therefore the small sized metallic containment closed to the wall of reactor vessel can be used for the reactor. Design principles and functions of the containment are as same as the containment for PWR. But the adoption of small sized containment brings about some benefits such as short period of manufacturing, relatively low cost, and easy for sealing. Loss of primary coolant accident would not be happened during the rupture accident of primary coolant pressure boundary inside the containment owing to its intrinsic safety

  11. HEAT PUMP USING SUBSOIL WATERS AS LOW TEMPERATURE HEAT SOURCE

    Directory of Open Access Journals (Sweden)

    Denysova Alla

    2015-08-01

    Full Text Available One of the basic directions of perfection of heat supply systems is the tendency of transition to the low-temperature heating systems based on application of heat pump installations. We consider heat supply system with heat pump installations using subsoil waters. Numerical simulation of thermal processes in the elements of a single-stage and double-stage heat pump systems has been worked out. Values of depths of wells and their quantity, necessary for effective operation of the offered installations, and values of capacity of electric water pumps for subsoil waters unit are calculated. Capacity of compressor electric drive and coefficient of performance of heat pump for the conditions of the city of Odessa are presented.

  12. Low temperature conversion of plastic waste into light hydrocarbons

    International Nuclear Information System (INIS)

    Shah, Sajid Hussain; Khan, Zahid Mahmood; Raja, Iftikhar Ahmad; Mahmood, Qaisar; Bhatti, Zulfiqar Ahmad; Khan, Jamil; Farooq, Ather; Rashid, Naim; Wu, Donglei

    2010-01-01

    Advance recycling through pyrolytic technology has the potential of being applied to the management of plastic waste (PW). For this purpose 1 l volume, energy efficient batch reactor was manufactured locally and tested for pyrolysis of waste plastic. The feedstock for reactor was 50 g waste polyethylene. The average yield of the pyrolytic oil, wax, pyrogas and char from pyrolysis of PW were 48.6, 40.7, 10.1 and 0.6%, respectively, at 275 deg. C with non-catalytic process. Using catalyst the average yields of pyrolytic oil, pyrogas, wax and residue (char) of 50 g of PW was 47.98, 35.43, 16.09 and 0.50%, respectively, at operating temperature of 250 deg. C. The designed reactor could work at low temperature in the absence of a catalyst to obtain similar products as for a catalytic process.

  13. Low-temperature behaviour of the engine oil

    Directory of Open Access Journals (Sweden)

    Vojtěch Kumbár

    2013-01-01

    Full Text Available The behaviour of engine oil is very important. In this paper has been evaluated temperature dependence kinematic viscosity of engine oils in the low temperatures. Five different commercially distributed engine oils (primarily intended for automobile engines with viscosity class 0W–40, 5W–40, 10W–40, 15W–40, and 20W–40 have been evaluated. The temperature dependence kinematic viscosity has been observed in the range of temperature from −15 °C to 15 °C (for all oils. Considerable temperature dependence kinematic viscosity was found and demonstrated in case of all samples, which is in accordance with theoretical assumptions and literature data. Mathematical models have been developed and tested. Temperature dependence dynamic viscosity has been modeled using a polynomials 3rd and 4th degree. The proposed models can be used for prediction of flow behaviour of oils. With monitoring and evaluating we can prevent technical and economic losses.

  14. Low temperature hydrothermal destruction of organics in Hanford tank wastes

    International Nuclear Information System (INIS)

    Orth, R.J.; Elmore, M.R.; Zacher, A.H.; Neuenschwander, G.G.; Schmidt, A.J.; Jones, E.O.; Hart, T.R.; Poshusta, J.C.

    1994-08-01

    The objective of this work is to evaluate and develop a low temperature hydrothermal process (HTP) for the destruction of organics that are present wastes temporarily stored in underground tanks at the Hanford Site. Organic compounds contribute to tank waste safety issues, such as hydrogen generation. Some organic compounds act as complexants, promoting the solubility of radioactive constituents such as 90 Sr and 241 Am, which is undesirable for waste pretreatment processing. HTP is thermal-chemical autogenous processing method that is typically operated between 250 degrees C and 375 degrees C and approximately 200 atm. Testing with simulated tank waste, containing a variety of organics has been performed. The distribution of strontium, cesium and bulk metals between the supernatant and solid phases as a function of the total organic content of the waste simulant will be presented. Test results using simulant will be compared with similar tests conducted using actual radioactive waste

  15. Towards spontaneous parametric down-conversion at low temperatures

    Directory of Open Access Journals (Sweden)

    Akatiev Dmitrii

    2017-01-01

    Full Text Available The possibility of observing spontaneous parametric down-conversion in doped nonlinear crystals at low temperatures, which would be useful for combining heralded single-photon sources and quantum memories, is studied theoretically. The ordinary refractive index of a lithium niobate crystal doped with magnesium oxide LiNbO3:MgO is measured at liquid nitrogen and helium temperatures. On the basis of the experimental data, the coefficients of the Sellmeier equation are determined for the temperatures from 5 to 300 K. In addition, a poling period of the nonlinear crystal has been calculated for observing type-0 spontaneous parametric down-conversion (ooo-synchronism at the liquid helium temperature under pumping at the wavelength of λp = 532 nm and emission of the signal field at the wavelength of λs = 794 nm, which corresponds to the resonant absorption line of Tm3+ doped ions.

  16. Hydrothermal carbonization of biomass waste under low temperature condition

    Directory of Open Access Journals (Sweden)

    Putra Herlian Eriska

    2018-01-01

    Full Text Available In this paper, the use of banana peel for energy purposes was investigated. Banana peel is a lignocellulosic waste since it is the most widely produced and consumed fruit in Indonesia. Among the others, hydrothermal carbonization (HTC was chosen as alternative themochemical process, suitable for high moisture biomass. Through a 1 L stirred reactor, hydrothermal treatments were performed under low temperature condition (190, 210 and 230 °C, residence times (30 and 60 min, and biomass to water ratio (1:3, 1:5, and 1:10. Three of product were collected from the process with primary material balance. Solid phase (hydrochar was evaluated in terms of calorific value, proximate and ultimate analysis. The results suggested that the hydrothermal carbonization of banana peel gave high heating value (HHV of 20.09 MJ/kg for its char after dried naturally.

  17. Single interval Rényi entropy at low temperature

    Science.gov (United States)

    Chen, Bin; Wu, Jie-qiang

    2014-08-01

    In this paper, we calculate the Rényi entropy of one single interval on a circle at finite temperature in 2D CFT. In the low temperature limit, we expand the thermal density matrix level by level in the vacuum Verma module, and calculate the first few leading terms in e -π/ T L explicitly. On the other hand, we compute the same Rényi entropy holographically. After considering the dependence of the Rényi entropy on the temperature, we manage to fix the interval-independent constant terms in the classical part of holographic Rényi entropy. We furthermore extend the analysis in [9] to higher orders and find exact agreement between the results from field theory and bulk computations in the large central charge limit. Our work provides another piece of evidence to support holographic computation of Rényi entropy in AdS3/CFT2 correspondence, even with thermal effect.

  18. Generator of the low-temperature heterogeneous plasma flow

    Science.gov (United States)

    Yusupov, D. I.; Gadzhiev, M. Kh; Tyuftyaev, A. S.; Chinnov, V. F.; Sargsyan, M. A.

    2018-01-01

    A generator of low-temperature dc plasma with an expanding channel of an output electrode for gas-thermal spraying was designed and constructed. The delivery of the sprayed powder into the cathode and anode arc-binding zones or into the plasma jet below the anode binding was realized. The electrophysical characteristics of both the plasma torch and the heterogeneous plasma flow with Al2O3 powder are studied. It is shown that the current-voltage characteristic (CVC) of a plasma torch depends on the gas flow rate. If the flow rate varies from 1 to 3 g/s, the falling CVC becomes gradually increasing. The speed and temperature of the sprayed powder are determined.

  19. Low-temperature excitations within the Bethe approximation

    International Nuclear Information System (INIS)

    Biazzo, I; Ramezanpour, A

    2013-01-01

    We propose the variational quantum cavity method to construct a minimal energy subspace of wavevectors that are used to obtain some upper bounds for the energy cost of the low-temperature excitations. Given a trial wavefunction we use the cavity method of statistical physics to estimate the Hamiltonian expectation and to find the optimal variational parameters in the subspace of wavevectors orthogonal to the lower-energy wavefunctions. To this end, we write the overlap between two wavefunctions within the Bethe approximation, which allows us to replace the global orthogonality constraint with some local constraints on the variational parameters. The method is applied to the transverse Ising model and different levels of approximations are compared with the exact numerical solutions for small systems. (paper)

  20. The low-temperature phase of morpholinium tetrafluoroborate

    Directory of Open Access Journals (Sweden)

    Tadeusz Lis

    2008-04-01

    Full Text Available The crystal structure of the low-temperature form of the title compound, C4H10NO+·BF4−, was determined at 80 K. Two reversible phase transitions, at 158/158 and 124/126 K (heating/cooling, were detected by differential scanning calorimetry for this compound, and the sequence of phase transitions was subsequently confirmed by single-crystal X-ray diffraction experiments. The asymmetric unit at 80 K consists of three BF4− tetrahedral anions and three morpholinium cations (Z′ = 3. Hydrogen-bonded morpholinium cations form chains along the [100] direction. The BF4− anions are connected to these chains by N—H...F hydrogen bonds. In the crystal structure, two different layers perpendicular to the [001] direction can be distinguished, which differ in the geometry of the hydrogen bonds between cationic and anionic species.

  1. Low-Temperature Solution Processable Electrodes for Piezoelectric Sensors Applications

    Science.gov (United States)

    Tuukkanen, Sampo; Julin, Tuomas; Rantanen, Ville; Zakrzewski, Mari; Moilanen, Pasi; Lupo, Donald

    2013-05-01

    Piezoelectric thin-film sensors are suitable for a wide range of applications from physiological measurements to industrial monitoring systems. The use of flexible materials in combination with high-throughput printing technologies enables cost-effective manufacturing of custom-designed, highly integratable piezoelectric sensors. This type of sensor can, for instance, improve industrial process control or enable the embedding of ubiquitous sensors in our living environment to improve quality of life. Here, we discuss the benefits, challenges and potential applications of piezoelectric thin-film sensors. The piezoelectric sensor elements are fabricated by printing electrodes on both sides of unmetallized poly(vinylidene fluoride) film. We show that materials which are solution processable in low temperatures, biocompatible and environmental friendly are suitable for use as electrode materials in piezoelectric sensors.

  2. Mapping of low temperature heat sources in Denmark

    DEFF Research Database (Denmark)

    Bühler, Fabian; Holm, Fridolin Müller; Huang, Baijia

    2015-01-01

    heat. The total accessible waste heat potential is found to be approximately 266 PJ per year with 58 % of it below 100 °C. In the natural heat category, temperatures below 20 °C originate from ambient air, sea water and shallow geothermal energy, and temperatures up to 100 °C are found for solar...... and deep geothermal energy. The theoretical solar thermal potential alone would be above 500 PJ per year. For the development of advanced thermodynamic cycles for the integration of heat sources in the Danish energy system, several areas of interest are determined. In the maritime transport sector a high......Low temperature heat sources are available in many applications, ranging from waste heat from industrial processes and buildings to geothermal and solar heat sources. Technical advancements, such as heat pumps with novel cycle design and multi-component working fluids, make the utilisation of many...

  3. Low temperature Moessbauer study of amorphous Fe83B17

    International Nuclear Information System (INIS)

    Miglierini, M.; Sitek, J.

    1987-01-01

    Information about changes in magnetic structures of metallic glass Fe 83 B 17 at low temperatures has been obtained by 57 Fe Moessbauer spectroscopy in the temperature range from 295 to 77 K. The mean values of the magnetic hyperfine field have been calculated from magnetic splitting of Moessbauer spectra. The angle between the direction of magnetization and the γ-ray direction θ obtained from line intensity ratios is given as a function of temperature. The curve shows a minimum at 120 K. The influence of decreasing temperature on the magnetic structure may be caused by a change in magnetic anisotropy and a reorientation of surface spins. The main contribution to the changes in θ comes from the reorientation of surface domains

  4. Low temperature isotope effects of hydrogen diffusion in metallic glasses

    International Nuclear Information System (INIS)

    Hofmann, A.; Kronmueller, H.

    1989-01-01

    Snoek-like relaxation peaks of Hydrogen and Deuterium in amorphous Fe 80 B 20 , Fe 40 Ni 40 P 14 B 6 and Fe 91 Zr 9 are detected. At low H, D concentrations the peaks are near 200 K and show small isotope effects of the average activation energies (anti Q H ≅ 0.6 eV, anti Q D - anti Q H ≤ 10 meV). For higher H, D-contents the peaks shift to lower temperatures around to 120 K and show distinct isotope effects in the activation energies (anti Q H ≅ 0.3 eV, anti Q D - anti Q H ≅ 30 meV) and in the amplitude of the low temperature tails of the relaxation peaks. This points to isotope mass dependent deviations from the Arrhenius law due to nonthermal tunneling processes. (orig.)

  5. Regularities in Low-Temperature Phosphatization of Silicates

    Science.gov (United States)

    Savenko, A. V.

    2018-01-01

    The regularities in low-temperature phosphatization of silicates are defined from long-term experiments on the interaction between different silicate minerals and phosphate-bearing solutions in a wide range of medium acidity. It is shown that the parameters of the reaction of phosphatization of hornblende, orthoclase, and labradorite have the same values as for clayey minerals (kaolinite and montmorillonite). This effect may appear, if phosphotization proceeds, not after silicate minerals with a different structure and composition, but after a secondary silicate phase formed upon interaction between silicates and water and stable in a certain pH range. Variation in the parameters of the reaction of phosphatization at pH ≈ 1.8 is due to the stability of the silicate phase different from that at higher pH values.

  6. Low temperature {sup 57}Fe Moessbauer study of cucumber root

    Energy Technology Data Exchange (ETDEWEB)

    Kovacs, K; Kuzmann, E; Homonnay, Z; Vertes, A [Institute of Chemistry, Eoetvoes Lorand University, PO Box 32, 1512 Budapest (Hungary); Fodor, F [Department of Plant Physiology and Molecular Plant Biology, Eoetvoes Lorand University, PO Box 32, 1512 Budapest (Hungary); Machala, L, E-mail: kkriszti@chem.elte.h [Centre for Nanomaterial Research, Palacky University, Svobody 26, Olomouc 771 46 (Czech Republic)

    2010-03-01

    Iron uptake and distribution in cucumber root were studied with the help of {sup 57}Fe Moessbauer spectroscopy at low temperature applying external magnetic field. Cucumber was grown in iron sufficient modified Hoagland nutrient solution. Moessbauer spectra of the frozen roots taken at 4.2 and 1.5 K, at 5 T external magnetic field support the identification of the main iron species (Fe{sup III}-carboxylates, hydrous ferric oxides, Fe{sup III}-sulfate-hydroxide) suggested according to its Moessbauer spectra taken between 35-200 K [1]. The magnetic ordering temperature of the hydrous ferric oxide and Fe{sup III}-sulfate-hydroxide was found to be in the range of 4.2-1.5 K, which suggests the incorporation of H{sub 3}O{sup +}, PO{sub 4}{sup 3-} and citrate into these minerals.

  7. Anodes for Solid Oxide Fuel Cells Operating at Low Temperatures

    DEFF Research Database (Denmark)

    Abdul Jabbar, Mohammed Hussain

    An important issue that has limited the potential of Solid Oxide Fuel Cells (SOFCs) for portable applications is its high operating temperatures (800-1000 ºC). Lowering the operating temperature of SOFCs to 400-600 ºC enable a wider material selection, reduced degradation and increased lifetime....... On the other hand, low-temperature operation poses serious challenges to the electrode performance. Effective catalysts, redox stable electrodes with improved microstructures are the prime requisite for the development of efficient SOFC anodes. The performance of Nb-doped SrT iO3 (STN) ceramic anodes...... at 400ºC. The potential of using WO3 ceramic as an alternative anode materials has been explored. The relatively high electrode polarization resistance obtained, 11 Ohm cm2 at 600 ºC, proved the inadequate catalytic activity of this system for hydrogen oxidation. At the end of this thesis...

  8. Low temperature magnetic characterization of EuO1-x

    Science.gov (United States)

    Rimal, Gaurab; Tang, Jinke

    EuO is a widely studied magnetic semiconductor. It is an ideal case of a Heisenberg ferromagnet as well as a model magnetic polaron system. The interesting aspect of this material is the existance of magnetic polarons in the low temperature region. We study the properties of oxygen deficient EuO prepared by pulsed laser deposition. Besides normal ferromagnetic transitions near 70K and 140K, we observe a different transition at 16K. We also observe a shift in the coercivity for field cooling versus zero field cooling. Possible mechanisms driving these behaviors will be discussed. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (DEFG02-10ER46728) and by the School of Energy Resources of the University of Wyoming.

  9. Ultrasonic attenuation of CdSe at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, B.J., E-mail: braulio@ula.v [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of); Calderon, E.; Bracho, D.B. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of); Perez, J.F. [Laboratorio de Instrumentacion Cientifica, Facultad de Ciencias, Universidad de Los Andes Apartado de Correos No.1, La Hechicera, Merida 5251 (Venezuela, Bolivarian Republic of)

    2010-08-01

    The ultrasonic attenuation of a single crystal of CdSe has been investigated over the temperature range from 1.2 to 300 K at frequencies of 10, 30 and 90 MHz. We report here the temperature dependence of the attenuation in the range 1.2-30 K for piezoactive and non-piezoactive acoustic waves. A temperature-induced relaxation for two piezoactive waves, which scale with frequency towards higher temperatures, was found. A modified Hutson and White model with a new parameter {gamma} is proposed to explain the relaxation maxima of our data and others in the literature. In this model the parameter {gamma}, which seems to be closely related to the compensation, takes into account the impurities-sound wave piezoelectric coupling. By inverting the proposed expression for the sound attenuation to obtain the electrical conductivity from the relaxation, it is found that impurity conductivity of the hopping type is the dominant conduction process at low temperatures.

  10. Ultrasonic attenuation of CdSe at low temperatures

    International Nuclear Information System (INIS)

    Fernandez, B.J.; Calderon, E.; Bracho, D.B.; Perez, J.F.

    2010-01-01

    The ultrasonic attenuation of a single crystal of CdSe has been investigated over the temperature range from 1.2 to 300 K at frequencies of 10, 30 and 90 MHz. We report here the temperature dependence of the attenuation in the range 1.2-30 K for piezoactive and non-piezoactive acoustic waves. A temperature-induced relaxation for two piezoactive waves, which scale with frequency towards higher temperatures, was found. A modified Hutson and White model with a new parameter γ is proposed to explain the relaxation maxima of our data and others in the literature. In this model the parameter γ, which seems to be closely related to the compensation, takes into account the impurities-sound wave piezoelectric coupling. By inverting the proposed expression for the sound attenuation to obtain the electrical conductivity from the relaxation, it is found that impurity conductivity of the hopping type is the dominant conduction process at low temperatures.

  11. Low temperature spalling of silicon: A crack propagation study

    Energy Technology Data Exchange (ETDEWEB)

    Bertoni, Mariana; Uberg Naerland, Tine; Stoddard, Nathan; Guimera Coll, Pablo

    2017-06-08

    Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.

  12. Amorphous gallium oxide grown by low-temperature PECVD

    KAUST Repository

    Kobayashi, Eiji

    2018-03-02

    Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

  13. Microstructure in 316LN stainless steel fatigued at low temperature

    International Nuclear Information System (INIS)

    Kruml, T.; Polak, J.

    2000-01-01

    The internal structure of AISI 316LN austenitic stainless steel cyclically strained at liquid nitrogen temperature has been studied using transmission electron microscopy and electron diffraction. High amplitude cyclic straining promotes the transformation of austenite with face centred cubic (f.c.c.) structure into ε-martensite with hexagonal close packed (h.c.p.) structure and α'-martensite with distorted base centred cubic (b.c.c.) structure. Thin plates containing ε-martensite were identified in all grains. α'-martensite nucleates at the intersection of the plates in grains with two or more systems of plates and can grow in the bands. The orientation of transformed phases follows the Shoji-Nichiyama and Kurdjumov-Sachs relations. Mechanisms of low temperature cyclic straining are discussed. (orig.)

  14. Radiation stability of low-temperature resistance thermometers

    International Nuclear Information System (INIS)

    Neklyudov, I.M.; Petrusenko, Yu.T.; Sleptsov, A.N.; Logvinenko, S.P.; Mikhina, G.F.; Rossoshanskij, O.A.

    1989-01-01

    The effect of low temperature (∼ 5 and 11 K) irradiation with E=30 MeV electrons and the subsequent annealing at 180 and 300 K on gauge dependences R(T) of resistance thermometers (RT) on the basis of p-GaAs, Ni and In is investigated. For GaAs-RT the dependence of electroresistance R(4.2 K) on the irradiation fluence is shown to be non monotonic. The annealing at 180 and 300 K does not restore GaAs-RT thermometric characteristics but it leads to their further degradation. The annealing of Ni and In irradiated RT's at T>180 K leads to total restoring of their electrophysical properties. 16 refs.; 5 figs.; 1 tab

  15. Introduction or 'Low-temperature detectors: yesterday, today and tomorrow'

    International Nuclear Information System (INIS)

    Fiorini, E.

    2004-01-01

    I would like first to express my deep gratitude to Flavio Gatti and to the Organizing committee for inviting me to introduce the tenths of these Workshops, which have become more and more stimulating with years. I cannot avoid to emphasize how much I miss, and I am sure we all miss, Sandro Vitale, who started this activity in Genoa. He was for me not only a dear friend, but also, despite our similar ages, an inspiring teacher. I cannot obviously review what will be reported in this week here, which looks already very exciting just at a glance to the program. I will limit myself to some personal recollection and to some arguments which I personally see of great interest for the application of low-temperature detectors in nuclear, subnuclear and astroparticle physics

  16. Work station for low temperature positron annihilation studies

    International Nuclear Information System (INIS)

    Chaturvedi, T.P.; Venkiteswaran, S.; Pujari, P.K.

    1999-05-01

    This report describes the automation implemented in the low temperature Positron Annihilation Spectroscopy studies system. Temperature programmer and controller (Lakeshore 330) is interfaced to PC-AT through an IEEE-488 add-on card. Through this data can be read and written to the temperature controller and it can be handled remotely. The PC- AT also houses the PCA-II card. Software (TEMP330.EXE) was developed to communicate with the temperature controller. A master software is also developed under which TEMP330.EXE and PCAII.EXE should run. Another program DATASEG.EXE creates a user file to store the temperature points given by user over which data acquisition is required. This has not only widened the scope of the positron research, but also helps achieve result with better precision. (author)

  17. Thermal conductivity of yttrium iron garnet at low temperatures

    International Nuclear Information System (INIS)

    Joshi, Y.P.; Sing, D.P.

    1979-01-01

    An analysis of the low-temperature thermal conductivity of yttrium iron garnet is presented giving consideration to the fact that in a conventional conductivity experiment the magnon temperature gradient inside a magnetic insulator need not be necessarily equal to the phonon temperature gradient. Consequently the effective conductivity can be less than the algebraic sum of the phonon and magnon intrinsic conductivities, depending on the magnon-phonon thermal relaxation rate. This relaxation rate has been distinguished from the individual phonon and magnon relaxation rates and an expression is derived for it. Theoretical calculations of the effective conductivity are found to be in good agreement with experimental results. The contribution of magnons to the effective conductivity is observed to be small at all temperatures below the conductivity maximum. (author)

  18. Low temperature thermal expansion of liquid Helium-4

    International Nuclear Information System (INIS)

    Berthold, J.E.

    1976-01-01

    Results of a measurement of the thermal expansion of liquid He-4 are presented along the saturated vapor pressure curve at low temperatures (0.1 - 0.6 0 K). The thermal expansion is related to the low momentum region of the He-4 excitation spectrum, and the results of this measurement are analyzed to gain information concerning deviations from linearity in the phonon region of the spectrum. The data is also compared with theoretical predictions of Alrich and Bhatt and McMillan and with the thermal expansion measurement of Van Degrift. In addition a discussion of previous experimental evidence on the shape of the low momentum region of the dispersion relation is presented

  19. Magnetic behavior of VBr2 at very low temperatures

    International Nuclear Information System (INIS)

    Arthur, J.R.; Kawarazaki, S.; Hirakawa, K.

    1985-01-01

    Vanadium dibromide, along with VCl 2 and VI 2 , has a hexagonal crystal structure (CdI 2 structure) in which the magnetic coupling of vanadium ions within the c planes is much stronger than the interplane coupling. These systems are of interest as possible examples of highly frustrated two-dimensional triangular lattice antiferromagnets. This interest is encouraged by high-temperature magnetic susceptibility measurements, which yield Weiss constants of several hundred degrees Kelvin. In fact, magnetic transitions do not occur in these substances until temperatures of less than 50 K are reached, indicating that the antiferromagnetic interactions are frustrated. A search for possible new transitions at very low temperatures was conducted with a VBr 2 single-crystal sample mounted in the dilution refrigerator neutron diffraction facility at HFIR. The crystal was not of very good quality, but three distinct magnetic reflections were observed at 4.2 K and below

  20. Small reactors for low-temperature nuclear heat applications

    International Nuclear Information System (INIS)

    1988-06-01

    In accordance with the Member States' calls for information exchange in the field of nuclear heat application (NHA) two IAEA meetings were organized already in 1976 and 1977. After this ''promising period'', the development of relevant programmes in IAEA Member States was slowed down and therefore only after several years interruption a new Technical Committee Meeting with a Workshop was organized in late 1983, to review the status of NHA, after a few new specific plans appeared in some IAEA Member States in the early 1980's for the use of heat from existing or constructed NPPs and for developing nuclear heating plants (NHP). In June 1987 an Advisory Group Meeting was convened in Winnipeg, Canada, to discuss and formulate a state-of-the-art review on ''Small Reactors for Low Temperature Nuclear Heat Application''. Information on this subject gained up to 1987 in the Member States whose experts attended this meeting is embodied in the present Technical Report. Figs and tabs

  1. The Future of Low Temperature Germanium as Dark Matter Detectors

    CERN Multimedia

    CERN. Geneva

    2009-01-01

    The Weakly Interactive Massive Particles (WIMPs) represent one of the most attractive candidates for the dark matter in the universe. With the combination of experiments attempting to detect WIMP scattering in the laboratory, of searches for their annihilation in the cosmos and of their potential production at the LHC, the next five years promise to be transformative. I will review the role played so far by low temperature germanium detectors in the direct detection of WIMPs. Because of its high signal to noise ratio, the simultaneous measurement of athermal phonons and ionization is so far the only demonstrated approach with zero-background. I will argue that this technology can be extrapolated to a target mass of the order of a tonne at reasonable cost and can keep playing a leading role, complementary to noble liquid technologies. I will describe in particular GEODM, the proposed Germanium Observatory for Dark Matter at the US Deep Underground Science and Engineering Laboratory (DUSEL).

  2. Low-temperature transport in ultra-thin tungsten films

    Energy Technology Data Exchange (ETDEWEB)

    Chiatti, Olivio [Neue Materialien, Institut fuer Physik, Humboldt-Univ. Berlin (Germany); London Centre for Nanotechnology, University College London (United Kingdom); Nash, Christopher; Warburton, Paul [London Centre for Nanotechnology, University College London (United Kingdom)

    2012-07-01

    Tungsten-containing films, fabricated by focused-ion-beam-induced chemical vapour deposition, are known to have an enhanced superconducting transition temperature compared to bulk tungsten, and have been investigated previously for film thickness down to 25 nm. In this work, by using ion-beam doses below 50 pC/{mu}m{sup 2} on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The electron transport properties were investigated at temperatures down to 350 mK and in magnetic fields up to 3 T, parallel and perpendicular to the films. The films in this work are closer to the limit of two-dimensional systems and are superconducting at low temperatures. Magnetoresistance measurements yield upper critical fields of the order of 1 T, and the resulting coherence length is smaller than the film thickness.

  3. Structure and low temperature thermal relaxation of amorphized germanium

    International Nuclear Information System (INIS)

    Glover, C.J.; Ridgway, M.C.; Byrne, A.P.; Clerc, C.; Hansen, J.L.; Larsen, A.N.

    1999-01-01

    The structure of implantation-induced damage in amorphized Ge has been investigated using high resolution extended x-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method, allowing a full reconstruction of the interatomic distance distribution (RDF). For the case of MeV implantation at -196 deg C, for an ion-dose range extending two orders of magnitude beyond that required for amorphization, a dose-dependent asymmetric RDF was determined for the amorphous phase including an increase in bond-length as a function of ion dose. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid, asymmetry and width of the RDF. Such an effect was attributed to the formation (and subsequent annihilation) of three- and five-fold Co-ordinated atoms, comparing favourably to theoretical simulations of the structure of a-Ge

  4. Low temperature synthesis of InP nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2008-12-20

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

  5. Low temperature synthesis of InP nanocrystals

    International Nuclear Information System (INIS)

    Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

    2008-01-01

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

  6. The HD+ dissociative recombination rate coefficient at low temperature

    Directory of Open Access Journals (Sweden)

    Wolf A.

    2015-01-01

    Full Text Available The effect of the rotational temperature of the ions is considered for low-energy dissociative recombination (DR of HD+. Merged beams measurements with HD+ ions of a rotational temperature near 300 K are compared to multichannel quantum defect theory calculations. The thermal DR rate coefficient for a Maxwellian electron velocity distribution is derived from the merged-beams data and compared to theoretical results for a range of rotational temperatures. Good agreement is found for the theory with 300 K rotational temperature. For a low-temperature plasma environment where also the rotational temperature assumes 10 K, theory predicts a considerably higher thermal DR rate coefficient. The origin of this is traced to predicted resonant structures of the collision-energy dependent DR cross section at few-meV collision energies for the particular case of HD+ ions in the rotational ground state.

  7. California low-temperature geothermal resources update: 1993

    Energy Technology Data Exchange (ETDEWEB)

    Youngs, L.G.

    1994-12-31

    The US Department of Energy -- Geothermal Division (DOE/GD) recently sponsored the Low-Temperature Geothermal Resources and Technology Transfer Program to bring the inventory of the nation`s low- and moderate-temperature geothermal resources up to date and to encourage development of the resources. The Oregon Institute of Technology, Geo-Heat Center (OIT/GHC) and the University of Utah Research Institute (UURI) established subcontracts and coordinated the project with the state resource teams from the western states that participated in the program. The California Department of Conservation, Division of Mines and Geology (DMG) entered into contract numbered 1092--023(R) with the OIT/GHC to provide the California data for the program. This report is submitted in fulfillment of that contract.

  8. Gasoline Ultra Efficient Fuel Vehicle with Advanced Low Temperature Combustion

    Energy Technology Data Exchange (ETDEWEB)

    Confer, Keith [Delphi Automotive Systems, LLC, Troy, MI (United States)

    2014-12-18

    The objective of this program was to develop, implement and demonstrate fuel consumption reduction technologies which are focused on reduction of friction and parasitic losses and on the improvement of thermal efficiency from in-cylinder combustion. The program was executed in two phases. The conclusion of each phase was marked by an on-vehicle technology demonstration. Phase I concentrated on short term goals to achieve technologies to reduce friction and parasitic losses. The duration of Phase I was approximately two years and the target fuel economy improvement over the baseline was 20% for the Phase I demonstration. Phase II was focused on the development and demonstration of a breakthrough low temperature combustion process called Gasoline Direct- Injection Compression Ignition (GDCI). The duration of Phase II was approximately four years and the targeted fuel economy improvement was 35% over the baseline for the Phase II demonstration vehicle. The targeted tailpipe emissions for this demonstration were Tier 2 Bin 2 emissions standards.

  9. Low temperature friction stir welding of P91 steel

    Directory of Open Access Journals (Sweden)

    Prasad Rao Kalvala

    2016-08-01

    Full Text Available Bead-on-plate friction stir welds were made on P91 alloy with low and high rotational speeds (100 and 1000 RPM to study their effects on weld microstructural changes and impression creep behavior. Temperatures experienced by the stir zone were recorded at the weld tool tip. Different zones of welds were characterized for their microstructural changes, hardness and creep behavior (by impression creep tests. The results were compared with submerged arc fusion weld. Studies revealed that the stir zone temperature with 100 RPM was well below Ac1 temperature of P91 steel while it was above Ac3 with 1000 RPM. The results suggest that the microstructural degradation in P91 welds can be controlled by low temperature friction stir welding technique.

  10. Design of stirling engine operating at low temperature difference

    Directory of Open Access Journals (Sweden)

    Sedlák Josef

    2018-01-01

    Full Text Available There are many sources of free energy available in the form of heat that is often simply wasted. The aim of this paper is to design and build a low temperature differential Stirling engine that would be powered exclusively from heat sources such as waste hot water or focused solar rays. A prototype is limited to a low temperature differential modification because of a choice of ABSplus plastic as a construction material for its key parts. The paper is divided into two parts. The first part covers a brief history of Stirling engine and its applications nowadays. Moreover, it describes basic principles of its operation that are supplemented by thermodynamic relations. Furthermore, an analysis of applied Fused Deposition Modelling has been done since the parts with more complex geometry had been manufactured using this additive technology. The second (experimental part covers 4 essential steps of a rapid prototyping method - Computer Aided Design of the 3D model of Stirling engine using parametric modeller Autodesk Inventor, production of its components using 3D printer uPrint, assembly and final testing. Special attention was devoted to last two steps of the process since the surfaces of the printed parts were sandpapered and sprayed. Parts, where an ABS plus plastic would have impeded the correct function, had been manufactured from aluminium and brass by cutting operations. Remaining parts had been bought in a hardware store as it would be uneconomical and unreasonable to manufacture them. Last two chapters of the paper describe final testing, mention the problems that appeared during its production and propose new approaches that could be used in the future to improve the project.

  11. Nanostructural studies on monoelaidin-water systems at low temperatures.

    Science.gov (United States)

    Kulkarni, Chandrashekhar V

    2011-10-04

    In recent years, lipid based nanostructures have increasingly been used as model membranes to study various complex biological processes. For better understanding of such phenomena, it is essential to gain as much information as possible for model lipid structures under physiological conditions. In this paper, we focus on one of such lipids--monoelaidin (ME)--for its polymorphic nanostructures under varying conditions of temperature and water content. In the recent contribution (Soft Matter, 2010, 6, 3191), we have reported the phase diagram of ME above 30 °C and compared with the phase behavior of other lipids including monoolein (MO), monovaccenin (MV), and monolinolein (ML). Remarkable phase behavior of ME, stabilizing three bicontinuous cubic phases, motivates its study at low temperatures. Current studies concentrate on the low-temperature (ME and subsequent reconstruction of its phase diagram over the entire temperature-water composition space (temperature, 0-76 °C; and water content, 0-70%). The polymorphs found for the monoelaidin-water system include three bicontinuous cubic phases, i.e., Ia3d, Pn3m, and Im3m, and lamellar phases which exhibit two crystalline (L(c1) and L(c0)), two gel (L(β) and L(β*)), and a fluid lamellar (L(α)) states. The fluid isotropic phase (L(2)) was observed only for lower hydrations (<20%), whereas hexagonal phase (H(2)) was not found under studied conditions. Nanostructural parameters of these phases as a function of temperature and water content are presented together with some molecular level calculations. This study might be crucial for perception of the lyotropic phase behavior as well as for designing nanostructural assemblies for potential applications. © 2011 American Chemical Society

  12. Anomalous thermal property behaviour of uranium at low temperatures

    International Nuclear Information System (INIS)

    Sandenaw, T.A.

    1975-01-01

    Low temperature heat capacity curves are presented for polycrystalline 235 U and 238 U metals in different microstructural states and of different purities. Thermal conductivity versus temperature curves are shown for low-purity, polycrystalline 238 U in the temperature range between approximately 80 and 373 0 K for metal having undergone varied fabrication procedures. Published information suggests that there will be no structural modification in very pure uranium below room temperature. The influence of impurities on low temperature transitions may be through their effects on dislocation formation. Thermal conductivity and heat capacity runs started at approximately 80 0 K, after holding specimens at the temperature of boiling liquid nitrogen, do not give results which match up with runs started below 36 to 43 0 K. Result of measurements started at approximately 80 0 K indicate that an ordering mechanism is predominating, with microstructure rather than purity being the important factor. This can be explained if ordering at approximately 80 0 K is through lattice imperfections remaining from prior specimen processing. The drop off in heat capacity appearing above 36 0 K in the C/sub p/ versus T curves of 235 U and 238 U suggest the possibility of: (1) heat evolution from a developing antiphase structure or (2) heat evolution similar to that noted with a quenched martensite. Physical property changes in 238 U at 250 to 270 0 K and at 325 to 350 0 K seem to be related to the heat evolution which starts at 36 0 K during adiabatic heat capacity measurements. The data from heat capacity and thermal conductivity measurements are analyzed to help explain the significance of the sometimes very slight physical property changes observed at 36 to 43, approximately 80, 250 to 270 and 325 to 350 0 K in uranium metal. (U.S.)

  13. Low temperature gamma sterilization of a bioresorbable polymer, PLGA

    Science.gov (United States)

    Davison, Lisa; Themistou, Efrosyni; Buchanan, Fraser; Cunningham, Eoin

    2018-02-01

    Medical devices destined for insertion into the body must be sterilised before implantation to prevent infection or other complications. Emerging biomaterials, for example bioresorbable polymers, can experience changes in their properties due to standard industrial sterilization processes. Gamma irradiation is one of the most reliable, large scale sterilization methods, however it can induce chain scission, cross-linking or oxidation reactions in polymers. sterilization at low temperature or in an inert atmosphere has been reported to reduce the negative effects of gamma irradiation. The aim of this study was to investigate the impact of low temperature sterilization (at -80 °C) when compared to sterilization at ambient temperature (25 °C) both in inert atmospheric conditions of nitrogen gas, on poly(lactide co-glycolide) (PLGA). PLGA was irradiated at -80 and 25 °C at 40 kGy in a nitrogen atmosphere. Samples were characterised using differential scanning calorimetry (DSC), tensile test, Fourier transform infrared (FTIR) spectroscopy, proton nuclear magnetic resonance (1H NMR) spectroscopy and gel permeation chromatography (GPC). The results showed that the molecular weight was significantly reduced as was the glass transition temperature, an indication of chain scission. FTIR showed small changes in chemical structure in the methyl and carbonyl groups after irradiation. Glass transition temperature was significantly different between irradiation at -80 °C and irradiation at 25 °C, however this was a difference of only 1 °C. Ultimately, the results indicate that the sterilization temperature used does not affect PLGA when carried out in a nitrogen atmosphere.

  14. Analysis of Low Temperature Organic Rankine Cycles for Solar Applications

    Science.gov (United States)

    Li, Yunfei

    The present work focuses on Organic Rankine Cycle (ORC) systems and their application to low temperature waste heat recovery, combined heat and power as well as off-grid solar power generation applications. As CO_2 issues come to the fore front and fossil fuels become more expensive, interest in low grade heat recovery has grown dramatically in the past few years. Solar energy, as a clean, renewable, pollution-free and sustainable energy has great potential for the use of ORC systems. Several ORC solutions have been proposed to generate electricity from low temperature sources. The ORC systems discussed here can be applied to fields such as solar thermal, biological waste heat, engine exhaust gases, small-scale cogeneration, domestic boilers, etc. The current work presents a thermodynamic and economic analysis for the use of ORC systems to convert solar energy or low exergy energy to generate electrical power. The organic working fluids investigated here were selected to investigate the effect of the fluid saturation temperature on the performance of ORCs. The working fluids under investigation are R113, R245fa, R123, with boiling points between 40°C and 200°C at pressures from 10 kPa to 10 MPa. Ambient temperature air at 20oC to 30oC is utilized as cooling resource, and allowing for a temperature difference 10°C for effective heat transfer. Consequently, the working fluids are condensed at 40°C. A combined first- and second-law analysis is performed by varying some system independent parameters at various reference temperatures. The present work shows that ORC systems can be viable and economical for the applications such as waste heat use and off-grid power generation even though they are likely to be more expensive than grid power.

  15. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

    Science.gov (United States)

    He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

    2017-12-13

    It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

  16. Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

    Science.gov (United States)

    Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

    2016-02-01

    Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

  17. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  18. Erosion–corrosion and corrosion properties of DLC coated low temperature Erosion–corrosion and corrosion properties of DLC coated low temperature

    DEFF Research Database (Denmark)

    Jellesen, Morten Stendahl; Christiansen, Thomas; Hilbert, Lisbeth Rischel

    2009-01-01

    of AISI 316 as substrate for DLC coatings are investigated. Corrosion and erosion–corrosion measurements were carried out on low temperature nitrided stainless steel AISI 316 and on low temperature nitrided stainless steel AISI 316 with a top layer of DLC. The combination of DLC and low temperature...... nitriding dramatically reduces the amount of erosion–corrosion of stainless steel under impingement of particles in a corrosive medium....

  19. The growth of GaN films by alternate source gas supply hot-mesh CVD method

    Energy Technology Data Exchange (ETDEWEB)

    Komae, Yasuaki; Saitou, Takeshi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endoh, Tetsuo [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Faculty of Engineering, Yamagata University, Yonezawa 992-8510 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Yasui, Kanji, E-mail: kyasui@vos.nagaokaut.ac.j [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2009-04-30

    Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH{sub 3}), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH{sub 3} and TMA on a SiC layer grown by carbonization on Si substrates using propane (C{sub 3}H{sub 8}). GaN films were grown on an AlN layer by a reaction between NH{sub x} radicals generated on a ruthenium (Ru) coated tungsten (W)-mesh and TMG molecules. An alternating source gas supply or an intermittent supply of one of the source gases during the film growth are expected to be effective for the suppression of gas phase reactions and for the enhancement of precursor migration on the substrate surface. By the intermittent supply of alkylmetal gas only during the growth of the AlN layer, the defect generation in the GaN films was reduced. GaN film growth by intermittent supply on an AlN buffer layer, however, did not lead to the improvement of the film quality.

  20. Elaboration in the area of low temperature chlorination of rare-metal crude ore

    International Nuclear Information System (INIS)

    Mirsaidov, U.M.

    2002-01-01

    The chemical base of low temperature chlorination of rare-metal crude ore was elaborated. The chemical nature of chlorination process which pass at low temperature was decoded and scientifically elaborated

  1. Low temperature corneal laser welding investigated by atomic force microscopy

    Science.gov (United States)

    Matteini, Paolo; Sbrana, Francesca; Tiribilli, Bruno; Pini, Roberto

    2009-02-01

    The structural modifications in the stromal matrix induced by low-temperature corneal laser welding were investigated by atomic force microscopy (AFM). This procedure consists of staining the wound with Indocyanine Green (ICG), followed by irradiation with a near-infrared laser operated at low-power densities. This induces a local heating in the 55-65 °C range. In welded tissue, extracellular components undergo heat-induced structural modifications, resulting in a joining effect between the cut edges. However, the exact mechanism generating the welding, to date, is not completely understood. Full-thickness cuts, 3.5 mm in length, were made in fresh porcine cornea samples, and these were then subjected to laser welding operated at 16.7 W/cm2 power density. AFM imaging was performed on resin-embedded semi-thin slices once they had been cleared by chemical etching, in order to expose the stromal bulk of the tissue within the section. We then carried out a morphological analysis of characteristic fibrillar features in the laser-treated and control samples. AFM images of control stromal regions highlighted well-organized collagen fibrils (36.2 +/- 8.7 nm in size) running parallel to each other as in a typical lamellar domain. The fibrils exhibited a beaded pattern with a 22-39 nm axial periodicity. Laser-treated corneal regions were characterized by a significant disorganization of the intralamellar architecture. At the weld site, groups of interwoven fibrils joined the cut edges, showing structural properties that were fully comparable with those of control regions. This suggested that fibrillar collagen is not denatured by low-temperature laser welding, confirming previous transmission electron microscopy (TEM) observations, and thus it is probably not involved in the closure mechanism of corneal cuts. The loss of fibrillar organization may be related to some structural modifications in some interfibrillar substance as proteoglycans or collagen VI. Furthermore, AFM

  2. Low temperature impact testing of welded structural wrought iron

    Science.gov (United States)

    Rogers, Zachary

    During the second half of the 19th century, structural wrought iron was commonly used in construction of bridges and other structures. Today, these remaining structures are still actively in use and may fall under the protection of historic preservation agencies. Continued use and protection leads to the need for inspection, maintenance, and repair of the wrought iron within these structures. Welding can be useful to achieve the appropriate repair, rehabilitation, or replacement of wrought iron members. There is currently very little published on modern welding techniques for historic wrought iron. There is also no pre-qualified method for this welding. The demand for welding in the repair of historic structural wrought iron has led to a line of research investigating shielded metal arc welding (SMAW) of historic wrought iron at the University of Colorado Denver. This prior research selected the weld type and other weld specifications to try and achieve a recognized specific welding procedure using modern SMAW technology and techniques. This thesis continues investigating SMAW of historic wrought iron. Specifically, this thesis addresses the toughness of these welds from analysis of the data collected from performing Charpy V-Notch (CVN) Impact Tests. Temperature was varied to observe the material response of the welds at low temperature. The wrought iron used in testing was from a historic vehicle bridge in Minnesota, USA. This area, and many other areas with wrought iron structures, can experience sustained or fluctuating temperatures far below freezing. Investigating the toughness of welds in historic wrought iron at these temperatures is necessary to fully understand material responses of the existing structures in need of maintenance and repair. It was shown that welded wrought iron is tougher and more ductile than non-welded wrought iron. In regards to toughness, welding is an acceptable repair method. Information on wrought iron, low temperature failure

  3. Room and low temperature synthesis of carbon nanofibres

    International Nuclear Information System (INIS)

    Boskovic, Bojan O.

    2002-01-01

    Carbon nanotubes and nanofibres have attracted attention in recent years as new materials with a number of very promising potential applications. Carbon nanotubes are potential candidates for field emitters in flat panel displays. Carbon nanofibres could also be used as a hydrogen storage material and as a filling material in polymer composites. Carbon nanotubes are already used as tips in scanning probe microscopy due to their remarkable mechanical and electrical properties, and could be soon used as nanotweezers. Use of carbon nanotubes in nanoelectronics will open further miniaturisation prospects. Temperatures ranging from 450 to 1000 deg C have been a required for catalytic growth of carbon nanotubes and nanofibres. Researchers have been trying to reduce the growth temperatures for decades. Low temperature growth conditions will allow the growth of carbon nanotubes on different substrates, such glass (below 650 deg C) and as plastics (below 150 deg C) over relatively large areas, which is especially suitable for fiat panel display applications. Room temperature growth conditions could open up the possibility of using different organic substrates and bio-substrates for carbon nanotubes synthesis. Carbon nanofibres have been synthesised at room temperature and low temperatures below 250 deg C using radio frequency plasma enhanced chemical vapour deposition (r.f. PECVD). Previously, the growth of carbon nanofibres has been via catalytic decomposition of hydrocarbons or carbon monoxide at temperatures above 300 deg C. To the best of our knowledge, this is the first evidence of the growth of carbon nanofibres at temperatures lower than 300 deg C by any method. The use of a transition metal catalyst and r.f.-PECVD system is required for the growth of the carbon nanofibre when a hydrocarbon flows above the catalyst. Within the semiconductor industry r.f.-PECVD is a well established technique which lends itself for the growth of carbon nanofibres for various

  4. Thermal sensor based zinc oxide diode for low temperature applications

    Energy Technology Data Exchange (ETDEWEB)

    Ocaya, R.O. [Department of Physics, University of the Free State (South Africa); Al-Ghamdi, Ahmed [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); El-Tantawy, F. [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Farooq, W.A. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig, 23169 (Turkey)

    2016-07-25

    The device parameters of Al/p-Si/Zn{sub 1-x}Al{sub x}O-NiO/Al Schottky diode for x = 0.005 were investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and impedance spectroscopy. The films were prepared using the sol–gel method followed by spin-coating on p-Si substrate. The ideality factor, barrier height, resistance and capacitance of the diode were found to depend on temperature. The calculated barrier height has a mean. Capacitance–voltage (C–V) measurements show that the capacitance decreases with increasing frequency, suggesting a continuous distribution of interface states over the surveyed 100 kHz to 1 MHz frequency range. The interface state densities, N{sub ss}, of the diode were calculated and found to peak as functions of bias and temperature in two temperature regions of 50 K–300 K and 300 K–400 K. A peak value of approximately 10{sup 12}/eV cm{sup 2} was observed around 0.7 V bias for 350 K and at 3 × 10{sup 12}/eVcm{sup 2} around 2.2 V bias for 300 K. The relaxation time was found to average 4.7 μs over all the temperatures, but showing its lowest value of 1.58 μs at 300 K. It is seen that the interface states of the diode is controlled by the temperature. This suggests that Al/p-Si/Zn1-xAlxO-NiO/Al diode can be used as a thermal sensors for low temperature applications. - Highlights: • Al/pSi/Zn1-xAlxO-NiO/Al Schottky diode was fabricated by sol gel method. • The interface state density of the diode is controlled by the temperature. • Zinc oxide based diode can be used as a thermal sensor for low temperature applications.

  5. Development of a sample environment for neutron diffraction at low temperature

    International Nuclear Information System (INIS)

    Lee, Jeong Soo; Lee, Chang Hee; Choi, Yong Nam

    2000-06-01

    This report contains the development of low temperature sample environment for the neutron diffraction and its utilization techniques. With this research, a low temperature experimental facility of T=10-300 K was developed. We measured magnetic peak of La 1 .4Sr 1 .6Mn 2 O 7 due to low temperature phase transition successfully by this unit installed at the sample table of HRPD. Therefore, the research capability for various materials under the low temperature was expanded

  6. Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

    KAUST Repository

    Yuan, Dajun

    2010-08-23

    A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Low temperature carrier transport properties in isotopically controlled germanium

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Kohei [Univ. of California, Berkeley, CA (United States)

    1994-12-01

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled 75Ge and 70Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the [74Ge]/[70Ge] ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples the authors have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition.

  8. Low temperature ultrasonic study of hydrogen in niobium

    International Nuclear Information System (INIS)

    Poker, D.B.

    1979-01-01

    Measurements were made of the velocity and attenuation of ultrasonic waves in niobium containing 1000 ppM oxygen with additional concentrations of hydrogen, to determine the properties of a relaxation of the hydrogen which appears below 10 K. Measurements were made as a function of temperature, frequency, polarization of the ultrasonic wave, hydrogen isotope, and concentration of hydrogen and oxygen. The Birnbaum--Flynn model of hydrogen tunnelling is modified to take into account the trapping of hydrogen by interstitial impurities. An Orbach process is proposed for a relaxation between the degenerate first excited states. Three parameters which are determined by the hydrogen ultrasonic attenuation data are sufficient to describe the properties of this model. The model correctly predicts the presence of unusual features of the relaxation which are not contained in a classical model of hydrogen motion over a potential barrrier; the decrease of the hydrogen relaxation strength at low temperatures, the decrease in velocity below the relaxation temperature without a corresponding effect in the attenuation, and the broadness of the deuterium decrement peak compared to that for hydrogen. A reasonable fit to the velocity data for low concentration of hydrogen is made by the model with no adjustable parameters. A fit to the heat capacity can be made with the addition of parameters representing the strain effects of the oxygen trapping

  9. Low-temperature graphene synthesis using microwave plasma CVD

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-01-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

  10. Low-temperature graphene synthesis using microwave plasma CVD

    Science.gov (United States)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-02-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

  11. Low temperature high frequency coaxial pulse tube for space application

    Energy Technology Data Exchange (ETDEWEB)

    Charrier, Aurelia; Charles, Ivan; Rousset, Bernard; Duval, Jean-Marc [SBT, UMR-E CEA / UJF-Grenoble 1, INAC, 17, rue des Martyrs, Grenoble, F-38054 (France); Daniel, Christophe [CNES, 18, avenue Edouard Belin, Toulouse, F-31401 (France)

    2014-01-29

    The 4K stage is a critical step for space missions. The Hershel mission is using a helium bath, which is consumed day by day (after depletion, the space mission is over) while the Plank mission is equipped with one He4 Joule-Thomson cooler. Cryogenic chain without helium bath is a challenge for space missions and 4.2K Pulse-Tube working at high frequency (around 30Hz) is one option to take it up. A low temperature Pulse-Tube would be suitable for the ESA space mission EChO (Exoplanet Characterisation Observatory, expected launch in 2022), which requires around 30mW cooling power at 6K; and for the ESA space mission ATHENA (Advanced Telescope for High ENergy Astrophysics), to pre-cool the sub-kelvin cooler (few hundreds of mW at 15K). The test bench described in this paper combines a Gifford-McMahon with a coaxial Pulse-Tube. A thermal link is joining the intercept of the Pulse-Tube and the second stage of the Gifford-McMahon. This intercept is a separator between the hot and the cold regenerators of the Pulse-Tube. The work has been focused on the cold part of this cold finger. Coupled with an active phase shifter, this Pulse-Tube has been tested and optimized and temperatures as low as 6K have been obtained at 30Hz with an intercept temperature at 20K.

  12. Hydrogen yield from low temperature steam reforming of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Das, N.K.; Dalai, A.K. [Saskatchewan Univ., Saskatoon, SK (Canada). Dept. of Chemical Engineering, Catalysis and Chemical Reaction Engineering Laboratories; Ranganathan, R. [Saskatchewan Research Council, Saskatoon, SK (Canada)

    2007-02-15

    Interest in the use of ethanol for fuel cell hydrogen production was discussed with particular reference to a study in which the production of hydrogen was maximized through low temperature steam reforming of ethanol in the temperature range of 200 to 360 degrees C. The primary objective of this study was to determine the effect of Mn concentration on a Cu/Al{sub 2}O{sub 3} catalyst for steam reforming of ethanol to produce hydrogen. The purpose was to maximize ethanol conversion and hydrogen selectivity in the lowest possible reaction temperature for the ideal catalyst activity. The optimum reaction conditions in the presence of a suitable catalyst can produce the desired products of hydrogen and carbon dioxide. Cu/Al{sub 2}O{sub 3} catalysts with six different concentrations ranging from 0 to 10 weight per cent Mn, were prepared, characterized and studied for the ethanol-steam reforming reaction. The effects of different process variables were studied, including water-to-ethanol feed ratio, space time and catalyst reduction temperatures on ethanol conversion and hydrogen yield. Maximum ethanol conversion of 60.7 per cent and hydrogen yield of 3.74 (mol of hydrogen per mol of ethanol converted) were observed at 360 degrees C for a catalyst with 2.5 weight per cent Mn loading. 29 refs., 3 tabs., 12 figs.

  13. Foundations of modelling of nonequilibrium low-temperature plasmas

    Science.gov (United States)

    Alves, L. L.; Bogaerts, A.; Guerra, V.; Turner, M. M.

    2018-02-01

    This work explains the need for plasma models, introduces arguments for choosing the type of model that better fits the purpose of each study, and presents the basics of the most common nonequilibrium low-temperature plasma models and the information available from each one, along with an extensive list of references for complementary in-depth reading. The paper presents the following models, organised according to the level of multi-dimensional description of the plasma: kinetic models, based on either a statistical particle-in-cell/Monte-Carlo approach or the solution to the Boltzmann equation (in the latter case, special focus is given to the description of the electron kinetics); multi-fluid models, based on the solution to the hydrodynamic equations; global (spatially-average) models, based on the solution to the particle and energy rate-balance equations for the main plasma species, usually including a very complete reaction chemistry; mesoscopic models for plasma-surface interaction, adopting either a deterministic approach or a stochastic dynamical Monte-Carlo approach. For each plasma model, the paper puts forward the physics context, introduces the fundamental equations, presents advantages and limitations, also from a numerical perspective, and illustrates its application with some examples. Whenever pertinent, the interconnection between models is also discussed, in view of multi-scale hybrid approaches.

  14. Low temperature spent fuel oxidation under tuff repository conditions

    International Nuclear Information System (INIS)

    Einziger, R.E.; Woodley, R.E.

    1985-01-01

    The Nevada Nuclear Waste Storage Investigations Project is studying the suitability of tuffaceous rocks at Yucca Mountain, Nye County, Nevada, for high level waste disposal. The oxidation state of LWR spent fuel in a tuff repository may be a significant factor in determining its ability to inhibit radionuclide migration. Long term exposure at low temperatures to the moist air expected in a tuff repository is expected to increase the oxidation state of the fuel. A program is underway to determine the spent fuel oxidation mechanisms which might be active in a tuff repository. Initial work involves a series of TGA experiments to determine the effectiveness of the technique and to obtain preliminary oxidation data. Tests were run at 200 0 C and 225 0 C for as long as 720 hours. Grain boundary diffusion appears to open up a greater surface area for oxidation prior to onset of bulk diffusion. Temperature strongly influences the oxidation rates. The effect of moisture is small but readily measurable. 25 refs., 7 figs., 4 tabs

  15. Low-temperature catalytic gasification of wet industrial wastes

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, D C; Neuenschwander, G G; Baker, E G; Sealock, Jr, L J; Butner, R S

    1991-04-01

    Bench-scale reactor tests are in progress at Pacific Northwest Laboratory to develop a low-temperature, catalytic gasification system. The system, licensed under the trade name Thermochemical Environmental Energy System (TEES{reg sign}), is designed for treating a wide variety of feedstocks ranging from dilute organics in water to waste sludges from food processing. This report describes a test program which used a continuous-feed tubular reactor. This test program is an intermediate stage in the process development. The reactor is a laboratory-scale version of the commercial concept as currently envisioned by the process developers. An energy benefit and economic analysis was also completed on the process. Four conceptual commercial installations of the TEES process were evaluated for three food processing applications and one organic chemical manufacturing application. Net energy production (medium-Btu gas) was achieved in all four cases. The organic chemical application was found to be economically attractive in the present situation. Based on sensitivity studies included in the analysis, the three food processing cases will likely become attractive in the near future as waste disposal regulations tighten and disposal costs increase. 21 refs., 2 figs., 9 tabs.

  16. Low temperature irradiation effects on plastic deformation in BCC metals

    International Nuclear Information System (INIS)

    Aono, Yasuhisa

    1984-01-01

    Low temperature electron beam experiment was carried out on high purity iron and molybdenum single crystals, and its effect on the plastic deformation was examined. As the characteristics of the irradiated iron below 77 K, remarkable softening occurred in all orientations. This phenomenon is based on the interaction of self interstitial atoms and screw dislocations, and the other features such as the absorption of interstitial atoms into screw dislocations and the slip on maximum shearing stress planes were shown. On the other hand, the aggregate of interstitial atoms formed by annealing showed the different plastic characteristics from those of interstitial atoms, and gave the results corresponding to respective stages of the electric resistance recovery curves. Regarding molybdenum, the transfer of its self interstitial atoms is near 40 K, therefore at 77 K, cluster is formed, and it largely affects abnormal slip, which is one of the features of the plasticity of molybdenum. The peculiar dependence of the yield stress on the crystalline orientation was shown. The property of the interaction of the aggregate of interstitial atoms formed and grown by the annealing from 77 K to 500 K with dislocations corresponded to the information of defects obtained by the X-ray research of Maeta, and the similarity to the aggregate of iron was observed. (Kako, I.)

  17. Characterization of commercial supercapacitors for low temperature applications

    Science.gov (United States)

    Iwama, E.; Taberna, P. L.; Azais, P.; Brégeon, L.; Simon, P.

    2012-12-01

    Electrochemical characterizations at low temperature and floating tests have been performed on 600F commercial supercapacitor (SC) for acetonitrile (AN)-based and AN + methyl acetate (MA) mixed electrolytes. From -40 to +20 °C, AN electrolyte showed slightly higher capacitance than those of AN + MA mixed electrolytes (25 and 33 vol.% of MA). At -55 °C, however, AN electrolyte did not cycle at all, while MA mixed electrolyte normally cycled with a slight decrease in their capacitance. From electrochemical impedance spectroscopy measurements, the whole resistance for AN-based cells at -55 °C was found to be about 10,000 times higher than that of +20 °C, while a 40-fold increase in the cell resistance was obtained for the MA mixture between 20 and -55 °C. From the results of floating tests at 2.7 V and 60 °C for 1 month, the 25 vol.% MA mixture showed no change and slight decreased but stable capacitance.

  18. Topics in low-temperature Fermi liquid theory

    International Nuclear Information System (INIS)

    Hess, D.W.

    1987-01-01

    Several topics in quantum liquids are discussed including the elementary excitation spectrum of 3 He under pressure, spin-polarized 3 He, and an early attempt to formulate a Fermi liquid theory to describe the low-temperature thermodynamic and transport properties of the heavy-electron systems UPt 3 . The elementary excitation spectrum of ordinary liquid 3 He is calculated at several pressures using the polarization potential theory of Aldrich and Pines together with a simple model to describe the effect of multipair excitation. The effective interactions between quasi particles in fully spin-polarized 3 He are obtained from physical arguments and sum rules. The interactions between two down-spin impurities and that between an up and down spin are also deduced. The regime of small polarization is considered next. Using the phenomenological model of Bedell and Sanchez-Castro together with an ansatz form for the spin-flip interaction, a large increase in the singlet scattering rate as a function of polarization is obtained

  19. Low temperature recovery of radiation damage in vanadium

    International Nuclear Information System (INIS)

    Klabunde, C.E.; Coltman, R.R. Jr.; Williams, J.M.

    1975-01-01

    Some kind of order may emerge from the numerous anomalies in the low-temperature recovery of irradiated V if it is assumed that Stage I (first recovery by interstitial migration) occurs below 4 0 K. Present supporting evidence includes: from both thermal neutron and fission neutron damage studies (1) a continuous, nearly structureless recovery from 4 to 43 0 K independent of dose; (2) a nonlinear, decreasing damage rate at 4 0 K; and (3) from 6 0 K electron irradiations near threshold energy there is derived a Frenkel pair resistivity which is so small as to suggest significant loss of defects during irradiation. The assumption of a very low-lying Stage I also helps to explain several other unusual aspects of the data, especially those relating to the sharp recovery peak at 47 0 K. This is clearly a single first-order process (with a measured activation energy of 0.13 eV), but it has a strong positive dependence of population percentage upon dose, opposite to Stage II impurity detrapping peaks in several fcc metals. Also, the peak has a strong negative dependence upon irradiation temperature when equal doses put in at 4 and 31 0 K are compared

  20. The on-line low temperature nuclear orientation facility NICOLE

    International Nuclear Information System (INIS)

    Ohtsubo, T; Roccia, S; Gaulard, C; Stone, N J; Stone, J R; Köster, U; Nikolov, J; Veskovic, M; Simpson, G S

    2017-01-01

    We review major experiments and results obtained by the on-line low temperature nuclear orientation method at the NICOLE facility at ISOLDE, CERN since the year 2000 and highlight their general physical impact. This versatile facility, providing a large degree of controlled nuclear polarization, was used for a long-standing study of magnetic moments at shell closures in the region Z  = 28, N  = 28–50 but also for dedicated studies in the deformed region around A  ∼ 180. Another physics program was conducted to test symmetry in the weak sector and constrain weak coupling beyond V–A . Those two programs were supported by careful measurements of the involved solid state physics parameters to attain the full sensitivity of the technique and provide interesting interdisciplinary results. Future plans for this facility include the challenging idea of measuring the beta–gamma–neutron angular distributions from polarized beta delayed neutron emitters, further test of fundamental symmetries and obtaining nuclear structure data used in medical applications. The facility will also continue to contribute to both the nuclear structure and fundamental symmetry test programs. (paper)

  1. Methylation controls the low temperature induction of flowering in Arabidopsis.

    Science.gov (United States)

    Dennis, E S; Bilodeau, P; Burn, J; Finnegan, E J; Genger, R; Helliwell, C; Kang, B J; Sheldon, C C; Peacock, W J

    1998-01-01

    Control of the transition to flowering is critical for reproductive success of a plant. Studies in Arabidopsis have led us to suggest how this species has harnessed the environmental cue of a period of low temperature to ensure flowering occurs at an appropriate time. We propose that Arabidopsis has both vernalization-independent and vernalization-dependent pathways for the initiation of inflorescence development in the shoot apex. The vernalization-independent pathway may be concerned with the supply of carbohydrate to the shoot apex. In late flowering ecotypes which respond to vernalization the vernalization-independent pathway is blocked by the action of two dominant repressors of flowering, FRI and FLC, which interact to produce very late flowering plants which respond strongly to vernalization. We have isolated a gene which may correspond to FLC. We suggest the vernalization-dependent pathway, which may be concerned with apical GA biosynthesis, is blocked by methylation of a gene critical for flowering. This gene may correspond to that encoding kaurenoic acid hydroxylase (KAH), an enzyme catalysing a step in the GA biosynthetic pathway. Under this scheme vernalization causes unblocking of this pathway by demethylation possibly of the KAH gene and consequent biosynthesis of active GAs in the apex.

  2. Development of decay energy spectroscopy using low temperature detectors.

    Science.gov (United States)

    Jang, Y S; Kim, G B; Kim, K J; Kim, M S; Lee, H J; Lee, J S; Lee, K B; Lee, M K; Lee, S J; Ri, H C; Yoon, W S; Yuryev, Y N; Kim, Y H

    2012-09-01

    We have developed a high-resolution detection technique for measuring the energy and activity of alpha decay events using low-temperature detectors. A small amount of source material containing alpha-emitting radionuclides was enclosed in a 4π metal absorber. The energy of the alpha particles as well as that of the recoiled nuclides, low-energy electrons, and low-energy x-rays and γ-rays was converted into thermal energy of the gold absorber. A metallic magnetic calorimeter serving as a fast and sensitive thermometer was thermally attached to the metal absorber. In the present report, experimental demonstrations of Q spectroscopy were made with a new meander-type magnetic calorimeter. The thermal connection between the temperature sensor and the absorber was established with annealed gold wires. Each alpha decay event in the absorber resulted in a temperature increase of the absorber and the temperature sensor. Using the spectrum measured for a drop of (226)Ra solution in a 4π gold absorber, all of the alpha emitters in the sample were identified with a demonstration of good detector linearity. The resolution of the (226)Ra spectrum showed a 3.3 keV FWHM at its Q value together with an expected gamma escape peak at the energy shifted by its γ-ray energy. Copyright © 2012 Elsevier Ltd. All rights reserved.

  3. Low Temperature Systems. Special issue; Laag Temperatuur Systemen. Special

    Energy Technology Data Exchange (ETDEWEB)

    Wondergem, J. [Wondergem Intermedium (Netherlands); De Heer, L.P. [Afdeling Technologie, Vereniging van Nederlandse Installatiebedrijven VNI, Zoetermeer (Netherlands); Meijer, W. [Directoraat-Generaal voor Energie, Ministerie van Economische Zaken, The Hague (Netherlands); Op `t Veld, P.J.M. [Nederlandse Onderneming voor Energie en Milieu Novem, Sittard (Netherlands); Korbee, H.; Vrins, E. [Woon/Energie adviseurs duurzaam bouwen W/E, Gouda (Netherlands); Hogeling, J.J.N.M. [Stichting Instituut voor Studie en Stimulering van Onderzoek op het Gebied van Gebouwinstallaties ISSO, Rotterdam (Netherlands); Oostendorp, P.A. [Afdeling Koudetechniek en Wamtepompen, TNO Milieu, Energie en Procesinnovatie TNO-MEP, Apeldoorn (Netherlands); Bootsma, D.; Vriend, J. [Nederlandse Gasunie, Groningen (Netherlands); Vermeer, B.; Becque, C.D. [eds.

    1996-11-01

    In 11 articles attention is paid to several articles on the title systems (LTS). In the first article the role of the Dutch government in stimulating the use of LTS is briefly outlined. In the second article the planning by the Netherlands Agency for Energy and the Environment (Novem) for the development and implementation of LTS is discussed with respect to the embedding, financial consequences and required knowledge. In the third article the consequences of the introduction of LTS for the installation sector are dealt with. In article number four the necessity for a univocal package of design technical quality demands for low temperature water heaters (e.g. solar water heaters and heat pumps) and high temperature water heaters (e.g. boilers) is discussed. The optimization of heat pump installation in building systems is considered in article number five. Research on the gas-driven heat pump is dealt with in article six. In article seven the opinions of several experts in the field of sustainable building are given regarding the importance of LTS for the sustainable construction of buildings. In articles eight, nine and ten the advantages of the heat wall option, solar water heaters and micro-cogeneration as LTS for energy efficient houses are outlined. In article eleven information is given about manufacturers and suppliers of heat pumps and solar water heaters

  4. Final Report Low-temperature Resource Assessment Program

    Energy Technology Data Exchange (ETDEWEB)

    Lienau, P.J. [Geo-Heat Center, Oregon Institute of Technology, Klamath Falls, OR (US); Ross, H. [Earth Sciences and Resources Institute, University of Utah

    1996-02-01

    The U.S. Department of Energy - Geothermal Division (DOE/GD) recently sponsored the Low-Temperature Resource Assessment project to update the inventory of the nation's low- and moderate-temperature geothermal resources and to encourage development of these resources. A database of 8,977 thermal wells and springs that are in the temperature range of 20 degrees Celsius to 150 degrees Celsius has been compiled for ten western states, an impressive increase of 82% compared to the previous assessments. The database includes location, descriptive data, physical parameters, water chemistry and references for sources of data. Computer-generated maps are also available for each state. State Teams have identified 48 high-priority areas for near-term comprehensive resource studies and development. Resources with temperatures greater than 50 degrees Celsius located within 8 km of a population center were identified for 271 collocated cities. Geothermal energy costevaluation software has been developed to quickly identify the cost of geothermally supplied heat to these areas in a fashion similar to that used for conventionally fueled heat sources.

  5. Investigations on low temperature thermoluminescence centres in quartz

    International Nuclear Information System (INIS)

    Bernhardt, H.

    1984-01-01

    The present paper will help to understand the often investigated process of thermoluminescence of quartz which is of high complexity. A lot of traps exist in quartz crystals which compete with each other with respect to the trapping of charge carriers during the X-ray treatment. That is why a variety of processes takes place after X-irradiation at liquid nitrogen temperature (LNT) of quartz which complicate the phenomenology of low temperature thermoluminescence. This competition in the trapping process leads to the so-called 'sensibilization' or 'desensibilization' effects of thermoluminescence, respectively, which are described in this paper for the first time. This effect means the dependence of the LNT thermoluminescence intensity on a pre-irradiation dose applied at room temperature (RT). The influence of this pre-irradiation is understood assuming the saturation of competitive traps. This favours an enhanced trapping of charge carriers at LNT-(shallow) traps instead of the preferential trapping on the deep traps in the case of X-ray treatment of the as-grown crystal at LNT. To get the afore mentioned model we take into account not only thermoluminescence but also coloration, ir- and vuv-absorption measurements. (author)

  6. Foundations of low-temperature plasma physics—an introduction

    Science.gov (United States)

    von Keudell, A.; Schulz-von der Gathen, V.

    2017-11-01

    The use of plasmas as a reactive mixture of ions, electrons and neutrals is at the core of numerous technologies in industry, enabling applications in microelectronics, automotives, packaging, environment and medicine. Recently, even the use of plasmas in medical applications has made great progress. The dominant character of a plasma is often its non equilibrium nature with different temperatures for the individual species in a plasma, the ions, electrons and neutrals. This opens up a multitude of reaction pathways which are inaccessible to conventional methods in chemistry, for example. The understanding of plasmas requires expertise in plasma physics, plasma chemistry and in electrical engineering. This first paper in a series of foundation papers on low temperature plasma science is intended to provide the very basics of plasmas as a common starting point for the more in-depth discussion of particular plasma generation methods, plasma modeling and diagnostics in the other foundation papers. In this first paper of the series, the common terminology, definitions and main concepts are introduced. The covered aspects start with the basic definitions and include further plasma equilibria, particle collisions and transport, sheaths and discharge breakdowns.

  7. Combined cycle power plant with integrated low temperature heat (LOTHECO)

    International Nuclear Information System (INIS)

    Kakaras, E.; Doukelis, A.; Leithner, R.; Aronis, N.

    2004-01-01

    The major driver to enhance the efficiency of the simple gas turbine cycle has been the increase in process conditions through advancements in materials and cooling methods. Thermodynamic cycle developments or cycle integration are among the possible ways to further enhance performance. The current paper presents the possibilities and advantages from the LOTHECO natural gas-fired combined cycle concept. In the LOTHECO cycle, low-temperature waste heat or solar heat is used for the evaporation of injected water droplets in the compressed air entering the gas turbine's combustion chamber. Following a description of this innovative cycle, its advantages are demonstrated by comparison between different gas turbine power generation systems for small and large-scale applications, including thermodynamic and economic analysis. A commercial gas turbine (ALSTOM GT10C) has been selected and computed with the heat mass balance program ENBIPRO. The results from the energy analysis are presented and the features of each concept are discussed. In addition, the exergy analysis provides information on the irreversibilities of each process and suggested improvements. Finally, the economic analysis reveals that the combined cycle plant with a heavy-duty gas turbine is the most efficient and economic way to produce electricity at base load. However, on a smaller scale, innovative designs, such as the LOTHECO concept, are required to reach the same level of performance at feasible costs

  8. Pyrolysis at low-temperature of Mequinenza coal

    Energy Technology Data Exchange (ETDEWEB)

    Chorower, C

    1940-01-01

    In the low-temperature distillation of Mequinenza coal 13 to 14.5% of tar was obtained in the carbonizing unit and 10.7 to 12.0% in the rotary drum with or without steam. The yield of semicoke was 65 to 70.5%; the gas production was 91 to 109 liter per kilogram. The tar was distilled with and without steam, the fractions were freed from phenol and paraffin and purified by treatment with H/sub 2/SO/sub 4/. The coal tested was in many respects more like mineral coal than soft coal (thus, the liquid tar was of higher specific gravity, was free from resins and lower in paraffin and higher in phenol than in the case of soft coal). The pitch content of the tar was very slight, the yield of viscous oils was high. By distillation with steam 32% of benzine was obtained. Of the high S content established in the coking 8.5% was present in the benzine, 6.3% in the motor oil and 5.6% in the lubricating oil from the tar.

  9. The technique of autoradiography at very low temperature

    International Nuclear Information System (INIS)

    Pellerin, P.

    1959-01-01

    Biological samples frozen in liquid nitrogen (-195 deg. C) acquire the hardness of light metals, enabling the surface for autoradiography to be cut on a milling machine. The autoradiographic exposure is made in saturated nitrogen vapour. The emulsion, on a plastic base, is laid on the milled surface in a dark room and this assembly is then placed above the liquid nitrogen in a foam-teflon container. Measurements show that, a temperature gradient is established between -190 deg. C at the liquid nitrogen surface and -121 deg. C at the top of the closed container. Developing is done at room temperature, the speed of the emulsion being practically unchanged. This technique enables the specimen to be kept far below the freezing-point, from the moment the animal is killed until the plate is developed. Freezing ensures complete absence of chemical diffusion and that the recorded tracer distribution is precisely that obtaining at the time of death. The distribution at different levels can be investigated by milling off successive layers. Pseudo-radiographic effects are wholly non-existent. The enhancement of natural colours in the anatomical elements, brought about by low temperatures, is such that it becomes possible to dispense with staining when making colour autoradiograms of sections. (author) [fr

  10. Low temperature heat capacity of scandium and alloys of scandium

    Energy Technology Data Exchange (ETDEWEB)

    Tsang, T. W.E.

    1977-12-01

    The heat capacity of three electrotransport purified scandium samples has been measured from 1 to 20/sup 0/K. The resultant electronic specific heat constant and Debye temperature are 10.337 +- 0.015 mJ/gm-atom K/sup 2/ and 346.7 +- 0.8/sup 0/K respectively, and these values are believed to be truly representative of intrinsic scandium. Alloying studies have also been carried out to investigate the band structure of scandium based on the rigid band model, with zirconium to raise the electron concentration and magnesium to lower it. The results are then compared to the theoretical band structure calculations. Low temperature heat capacity measurements have also been made on some dilute Sc-Fe alloys. An anomaly is observed in the C/T vs. T/sup 2/ plot, but the C vs. T curve shows no evidence of magnetic ordering down to 1/sup 0/K, and electrical resistance measurement from 4 to 0.3/sup 0/K also indicates that no magnetic ordering took place.

  11. Localized temperature stability in Low Temperature Cofired Ceramics (LTCC).

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Steven Xunhu; Hsieh, Lung-Hwa.

    2012-04-01

    The base dielectrics of commercial low temperature cofired ceramics (LTCC) systems have a temperature coefficient of resonant frequency ({tau}{sub f}) in the range -50 {approx} -80 ppm/C. In this research we explored a method to realize zero or near zero {tau}{sub f} resonators by incorporating {tau}{sub f} compensating materials locally into a multilayer LTCC structure. To select composition for {tau}{sub f} adjustment, {tau}{sub f} compensating materials with different amount of titanates were formulated, synthesized, and characterized. Chemical interactions and physical compatibility between the {tau}{sub f} modifiers and the host LTCC dielectrics were investigated. Studies on stripline (SL) resonator panels with multiple compensating dielectrics revealed that: 1) compositions using SrTiO{sub 3} provide the largest {tau}{sub f} adjustment among titanates, 2) the {tau}{sub f} compensation is proportional to the amount of SrTiO{sub 3} in compensating materials, as well as the thickness of the compensating layer, and 3) the most effective {tau}{sub f} compensation is achieved when the compensating dielectric is integrated next to the SL. Using the effective dielectric constant of a heterogeneous layered dielectric structure, results from Method of Momentum (MoM) electromagnetic simulations are consistent with the experimental observations.

  12. Rheological behavior of drilling fluids under low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lomba, Rosana F.T.; Sa, Carlos H.M. de; Brandao, Edimir M. [PETROBRAS, Rio de Janeiro, RJ (Brazil). Centro de Pesquisas]. E-mails: rlomba, chsa, edimir@cenpes.petrobras.com.br

    2000-07-01

    The so-called solid-free fluids represent a good alternative to drill through productive zones. These drill-in fluids are known to be non-damaging to the formation and their formulation comprise polymers, salts and acid soluble solids. Xanthan gum is widely used as viscosifier and modified starch as fluid loss control additive. The salts most commonly used are sodium chloride and potassium chloride, although the use of organic salt brines has been increasing lately. Sized calcium carbonate is used as bridging material, when the situation requires. The low temperatures encountered during deep water drilling demand the knowledge of fluid rheology at this temperature range. The rheological behavior of drill-in fluids at temperatures as low as 5 deg C was experimentally evaluated. Special attention was given to the low shear rate behavior of the fluids. A methodology was developed to come up with correlations to calculate shear stress variations with temperature. The developed correlations do not depend on a previous choice of a rheological model. The results will be incorporated in a numerical simulator to account for temperature effects on well bore cleaning later on. (author)

  13. Pulling adsorbed polymers at an angle: A low temperature theory

    Science.gov (United States)

    Iliev, Gerasim; Whittington, Stuart

    2012-02-01

    We consider several partially-directed walk models in two- and three-dimensions to study the problem of a homopolymer interacting with a surface while subject to a force at the terminal monomer. The force is applied with a component parallel to the surface as well as a component perpendicular to the surface. Depending on the relative values of the force in each direction, the force can either enhance the adsorption transition or lead to desorption in an adsorbed polymer. For each model, we determine the associated generating function and extract the phase diagram, identifying states where the polymer is thermally desorbed, adsorbed, and under the influence of the force. We note the different regimes that appear in the problem and provide a low temperature approximation to describe them. The approximation is exact at T=0 and models the exact results extremely well for small values of T. This work is an extension of a model considered by S. Whittington and E. Orlandini.

  14. The Consumers Characteristics Analysis of Low Temperature Home Delivery

    Directory of Open Access Journals (Sweden)

    Shu-Fang Lai

    2013-01-01

    Full Text Available Because of technological advancements and the popularity of the Internet, online shopping has become an important shopping channel for consumers. Because people increasingly eat out, more consumers shop online, and food products are collected from convenience stores, or frozen food home delivery services are used. This study used questionnaire surveys to analyze the consumption habits of residents who shop online for frozen foods in the urban areas of northern Taiwan (Taipei City and New Taipei City. We distributed and collected 548 questionnaires, of which 484 were valid. Descriptive statistics, a chi-square test, and logistics regression analysis were used to analyze consumer characteristics, as well as important influential factors. The research results indicated that most online shoppers were women, and the top 3 factors influencing their purchasing decisions were freshness, delivery convenience, and ordering convenience. Participants in the age group of 40-49 years old, living in the urban area of New Taipei City, without junior college education, and with less than 10,000 NTD monthly incomes, were less likely to purchase frozen foods using low-temperature logistics services.

  15. Model for low temperature oxidation during long term interim storage

    Energy Technology Data Exchange (ETDEWEB)

    Desgranges, Clara; Bertrand, Nathalie; Gauvain, Danielle; Terlain, Anne [Service de la Corrosion et du Comportement des Materiaux dans leur Environnement, CEA/Saclay - 91191 Gif-sur-Yvette Cedex (France); Poquillon, Dominique; Monceau, Daniel [CIRIMAT UMR 5085, ENSIACET-INPT, 31077 Toulouse Cedex 4 (France)

    2004-07-01

    For high-level nuclear waste containers in long-term interim storage, dry oxidation will be the first and the main degradation mode during about one century. The metal lost by dry oxidation over such a long period must be evaluated with a good reliability. To achieve this goal, modelling of the oxide scale growth is necessary and this is the aim of the dry oxidation studies performed in the frame of the COCON program. An advanced model based on the description of elementary mechanisms involved in scale growth at low temperatures, like partial interfacial control of the oxidation kinetics and/or grain boundary diffusion, is developed in order to increase the reliability of the long term extrapolations deduced from basic models developed from short time experiments. Since only few experimental data on dry oxidation are available in the temperature range of interest, experiments have also been performed to evaluate the relevant input parameters for models like grain size of oxide scale, considering iron as simplified material. (authors)

  16. Low temperature catalytic reforming of heptane to hydrogen and syngas

    Directory of Open Access Journals (Sweden)

    M.E.E. Abashar

    2016-09-01

    Full Text Available The production of hydrogen and syngas from heptane at a low temperature is studied in a circulating fast fluidized bed membrane reactor (CFFBMR. A thin film of palladium-based membrane is employed to the displacement of the thermodynamic equilibrium for high conversion and yield. A mathematical model is developed to simulate the reformer. A substantial improvement of the CFFBMR is achieved by implementing the thin hydrogen membrane. The results showed that almost complete conversion of heptane and 46.25% increase of exit hydrogen yield over the value without membrane are achieved. Also a wide range of the H2/CO ratio within the recommended industrial range is obtained. The phenomena of high spikes of maximum nature at the beginning of the CFFBMR are observed and explanation offered. The sensitivity analysis results have shown that the increase of the steam to carbon feed ratio can increase the exit hydrogen yield up to 108.29%. It was found that the increase of reaction side pressure at a high steam to carbon feed ratio can increase further the exit hydrogen yield by 49.36% at a shorter reactor length. Moreover, the increase of reaction side pressure has an important impact in a significant decrease of the carbon dioxide and this is a positive sign for clean environment.

  17. An experimental study of praseodymium intermetallic compounds at low temperatures

    International Nuclear Information System (INIS)

    Greidanus, F.J.A.M.

    1982-01-01

    In this thesis the author studies the low temperature properties of praseodymium intermetallic compounds. In chapter 2 some of the techniques used for the experiments described in the subsequent chapters are discussed. A set-up to perform specific-heat experiments below 1 K and a technique for performing magnetic susceptibility measurments below 1 K, using a superconducting quantum interference device (SQUID) are described. Chapter 3 is devoted to the theory of interacting Pr 3+ ions. Both bilinear and biquadratic interactions are dealt with in a molecular-field approximation. It is shown that first as well as second-order phase transitions can occur, depending on the nature of the ground state, and on the ratio of magnetic to crystal-field interactions. In chapters 4, 5, 6 and 7 experimental results on the cubic Laves phase compounds PrRh 2 , PrIr 2 , PrPt 2 , PrRu 2 and PrNi 2 are presented. From inelastic neutron scattering experiments the crystalline electric field parameters of the above compounds are determined. In chapters 5 and 6 susceptibility, neutron-diffraction, hyperfine specific-heat, low-field magnetization, pulsed-field magnetization, specific-heat and resistivity measurements are presented. In chapter 7 the specific heat and differential susceptibility of PrNi 2 below 1 K are studied. Finally, in chapter 8 praseodymium intermetallic compounds with low-symmetry singlet ground states, and cubic compounds with magnetic doublet ground states are studied. (Auth.)

  18. Model for low temperature oxidation during long term interim storage

    International Nuclear Information System (INIS)

    Desgranges, Clara; Bertrand, Nathalie; Gauvain, Danielle; Terlain, Anne; Poquillon, Dominique; Monceau, Daniel

    2004-01-01

    For high-level nuclear waste containers in long-term interim storage, dry oxidation will be the first and the main degradation mode during about one century. The metal lost by dry oxidation over such a long period must be evaluated with a good reliability. To achieve this goal, modelling of the oxide scale growth is necessary and this is the aim of the dry oxidation studies performed in the frame of the COCON program. An advanced model based on the description of elementary mechanisms involved in scale growth at low temperatures, like partial interfacial control of the oxidation kinetics and/or grain boundary diffusion, is developed in order to increase the reliability of the long term extrapolations deduced from basic models developed from short time experiments. Since only few experimental data on dry oxidation are available in the temperature range of interest, experiments have also been performed to evaluate the relevant input parameters for models like grain size of oxide scale, considering iron as simplified material. (authors)

  19. Fly ash particles spheroidization using low temperature plasma energy

    Science.gov (United States)

    Shekhovtsov, V. V.; Volokitin, O. G.; Kondratyuk, A. A.; Vitske, R. E.

    2016-11-01

    The paper presents the investigations on producing spherical particles 65-110 μm in size using the energy of low temperature plasma (LTP). These particles are based on flow ash produced by the thermal power plant in Seversk, Tomsk region, Russia. The obtained spherical particles have no defects and are characterized by a smooth exterior surface. The test bench is designed to produce these particles. With due regard for plasma temperature field distribution, it is shown that the transition of fly ash particles to a state of viscous flow occurs at 20 mm distance from the plasma jet. The X-ray phase analysis is carried out for the both original state of fly ash powders and the particles obtained. This analysis shows that fly ash contains 56.23 wt.% SiO2; 20.61 wt.% Al2O3 and 17.55 wt.% Fe2O3 phases that mostly contribute to the integral (experimental) intensity of the diffraction maximum. The LTP treatment results in a complex redistribution of the amorphous phase amount in the obtained spherical particles, including the reduction of O2Si, phase, increase of O22Al20 and Fe2O3 phases and change in Al, O density of O22Al20 chemical unit cell.

  20. Low temperature irradiation creep of tungsten and molybdenum

    International Nuclear Information System (INIS)

    Pouchou, J.-L.

    1975-12-01

    It is demonstrated that the mechanism of stress biased nucleation of dislocation loops may contribute significantly to the low temperature irradiation creep. This is achieved by measuring length and electrical resistivity changes at liquid hydrogen temperature, under fission fragments bombardement. From these measurements (correlated with some electron microscopy observations of irradiated samples), the following three stages of deformation appear: at low doses (smaller than 10 -2 displacement per atom) the deformation is mainly an increase in volume due to point defects. The study of this stage gives the formation volume of a Frenkel pair, and the number of point defects created by an initial fission fragment; for doses higher than 10 -2 d.p.a., the point defects saturation is reached. At this stage, vacancies and interstitials collapse into loops, the nucleation of which is polarized by the applied stress. At zero stress, the corresponding creep rate is zero. At high stresses (>50 kg/mm 2 ), creep rate saturates at value of the order of 10 -21 (FF/cm 3 ) -1 ; because of the recombinations of loops, the creep rate decreases continuously during irradiation. The recombinations lead to a dense dislocation network (formed at doses of 1 d.p.a.), the climb of which oriented by the applied stress gives rise to a steady state creep. The creep rate is smaller, by at least one order of magnitude, than that which is observed in the stage of loop formation [fr

  1. Low-temperature synthesis of silicon carbide powder using shungite

    International Nuclear Information System (INIS)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-01-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  2. Ruthenium(V) oxides from low-temperature hydrothermal synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Hiley, Craig I.; Walton, Richard I. [Department of Chemistry, University of Warwick, Coventry (United Kingdom); Lees, Martin R. [Department of Physics, University of Warwick, Coventry (United Kingdom); Fisher, Janet M.; Thompsett, David [Johnson Matthey Technology Centre, Reading (United Kingdom); Agrestini, Stefano [Max-Planck Institut, CPfS, Dresden (Germany); Smith, Ronald I. [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Harwell Oxford, Didcot (United Kingdom)

    2014-04-22

    Low-temperature (200 C) hydrothermal synthesis of the ruthenium oxides Ca{sub 1.5}Ru{sub 2}O{sub 7}, SrRu{sub 2}O{sub 6}, and Ba{sub 2}Ru{sub 3}O{sub 9}(OH) is reported. Ca{sub 1.5}Ru{sub 2}O{sub 7} is a defective pyrochlore containing Ru{sup V/VI}; SrRu{sub 2}O{sub 6} is a layered Ru{sup V} oxide with a PbSb{sub 2}O{sub 6} structure, whilst Ba{sub 2}Ru{sub 3}O{sub 9}(OH) has a previously unreported structure type with orthorhombic symmetry solved from synchrotron X-ray and neutron powder diffraction. SrRu{sub 2}O{sub 6} exhibits unusually high-temperature magnetic order, with antiferromagnetism persisting to at least 500 K, and refinement using room temperature neutron powder diffraction data provides the magnetic structure. All three ruthenates are metastable and readily collapse to mixtures of other oxides upon heating in air at temperatures around 300-500 C, suggesting they would be difficult, if not impossible, to isolate under conventional high-temperature solid-state synthesis conditions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Liquefaction of ground tire rubber at low temperature.

    Science.gov (United States)

    Cheng, Xiangyun; Song, Pan; Zhao, Xinyu; Peng, Zonglin; Wang, Shifeng

    2018-01-01

    Low-temperature liquefaction has been investigated as a novel method for recycling ground tire rubber (GTR) into liquid using an environmentally benign process. The liquefaction was carried out at different temperatures (140, 160 and 180 °C) over variable time ranges (2-24 h) by blending the GTR with aromatic oil in a range from 0 to 100 parts per hundred rubber (phr). The liquefied GTR was separated into sol (the soluble fraction of rubber which can be extracted with toluene) and gel fractions (the solid fraction obtained after extraction) to evaluate the reclaiming efficiency. It was discovered that the percentage of the sol fraction increased with time, swelling ratio and temperature. Liquefied rubber was obtained with a high sol fraction (68.34 wt%) at 140 °C. Simultaneously, separation of nano-sized carbon black from the rubber networks occurred. The separation of carbon black from the network is the result of significant damage to the cross-linked-network that occurs throughout the liquefaction process. During liquefaction, a competitive reaction between main chain scission and cross-link bond breakage takes place. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Optimization criteria for low temperature waste heat utilization

    International Nuclear Information System (INIS)

    Kranebitter, F.

    1977-01-01

    A special case in this field is the utilization of very low temperature waste heat. The temperature level under consideration in this paper is in the range between the body temperature of human beings and their environment. The waste heat from power generation and industrial processes is also considered. Thermal energy conversion will be mainly accomplished by heat cycles where discharged waste heat is reverse proportional to the upper cycle temperature. Limiting this upper cycle temperature by technological reasons the optimization of the heat cycle will depend on the nature of the cycle itself and specially on the temperature selected for the heat discharge. The waste heat discharge is typical for the different kinds of heat cycles and the paper presents the four most important of them. Feasible heat transfer methods and their economic evaluations are discussed and the distillation processes will be the basis for further considerations. The waste heat utilization for distillation purposes could be realized by three different cycles, the open cycle, the closed cycle and the multy cycle. Resulting problems as deaeration of large water streams and removal of the dissolved gases and their solutions are also discussed. (M.S.)

  5. Evaluation of contaminated soil remediation by low temperature thermal desorption

    International Nuclear Information System (INIS)

    Gibbs, L.; Punt, M.

    1993-01-01

    Soil contaminated with diesel and aviation fuels has been excavated and stored at a Canadian Forces Base in Ontario. Because of the volatile nature of this contamination, it was determined that low temperature thermal desorption (LTTD) would be an effective method of remediating this soil. A full scale evaluation of LTTD technology was conducted at the base to determine its acceptability for other sites. In the LTTD process, soil enters a primary treatment unit and is heated to a sufficiently high temperature to volatilize the hydrocarbon contaminants. Offgases are treated in a secondary combustion chamber. Primary treatment kiln temperature was maintained at 260 degree C for each test during the evaluation. The LTTD unit was evaluated for two sets of operating conditions: two levels of inlet soil total petroleum hydrocarbon concentrations and two feed rates (16,000 and 22,000 kg/h). Emissions from the LTTD unit were monitored continuously for volatile organics, moisture, and gas velocity. Results of the tests and emissions analyses are presented. Outlet soil hydrocarbon concentration requirements of 100 ppM were not exceeded during the evaluation. Air hydrocarbon emissions only exceeded 100-ppM limits under upset conditions, otherwise virturally no total hydrocarbon content was observed in the stack gas. 5 refs., 6 figs., 9 tabs

  6. Low-temperature thermal conductivity of terbium-gallium garnet

    International Nuclear Information System (INIS)

    Inyushkin, A. V.; Taldenkov, A. N.

    2010-01-01

    Thermal conductivity of paramagnetic Tb 3 Ga 5 O 12 (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb 3+ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb 3+ ion.

  7. Selective and low temperature transition metal intercalation in layered tellurides

    Science.gov (United States)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  8. Low temperature ozone oxidation of solid waste surrogates

    Science.gov (United States)

    Nabity, James A.; Lee, Jeffrey M.

    2015-09-01

    Solid waste management presents a significant challenge to human spaceflight and especially, long-term missions beyond Earth orbit. A six-month mission will generate over 300 kg of solid wastes per crewmember that must be dealt with to eliminate the need for storage and prevent it from becoming a biological hazard to the crew. There are several methods for the treatment of wastes that include oxidation via ozone, incineration, microbial oxidation or pyrolysis and physical methods such as microwave drying and compaction. In recent years, a low temperature oxidation process using ozonated water has been developed for the chemical conversion of organic wastes to CO2 and H2O. Experiments were conducted to evaluate the rate and effectiveness with which ozone oxidized several different waste materials. Increasing the surface area by chopping or shredding the solids into small pieces more than doubled the rate of oxidation. A greater flow of ozone and agitation of the ozonated water system also increased processing rates. Of the materials investigated, plastics have proven the most difficult to oxidize. The processing of plastics above the glass transition temperatures caused the plastics to clump together which reduced the exposed surface area, while processing at lower temperatures reduced surface reaction kinetics.

  9. Low-temperature operating regime of the tokamak evacuating limiter

    International Nuclear Information System (INIS)

    Tokar', M.Z.

    1987-01-01

    The conditions for realizing the regime of strong recycling of a cold dense plasma of an evacuating limiter were determined based on a previously proposed model for describing the limiter layer of a tokamak. The scaling for the dependence of the gas pressure in the evacuation system on the average plasma density in the limiter layer was found, and agreed quantitatively with the results of measurements on the Alcator and ISX-B tokamaks. For the tokamak reactor of the INTOR scale the calculations show that the low-temperature operating regime of the evacuating limiter can be realized with a quite low pumping rate. It has the advantages of reduced erosion of the limiter and small fluxes of impurities into the working volume of the reactor. In addition, the relative concentration of the helium ash in the limiter layer does not exceed 2-3%, but the density of the main plasma is comparable to the proposed average density in the reactor. The concept of a stochastic limiter is of interest for lowering the plasma density in the limiter layer and lowering the thermal loads on the limiter

  10. Low temperature intermediate band metallic behavior in Ti implanted Si

    Energy Technology Data Exchange (ETDEWEB)

    Olea, Javier, E-mail: oleaariza@fis.ucm.es; Pastor, David; Garcia-Hemme, Eric; Garcia-Hernansanz, Rodrigo; Prado, Alvaro del; Martil, Ignacio; Gonzalez-Diaz, German

    2012-08-31

    Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10{sup 14}-10{sup 16} cm{sup -2} range. Results of the sample implanted with the 10{sup 16} cm{sup -2} dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices. - Highlights: Black-Right-Pointing-Pointer We fabricated high dose Ti implanted Si samples for intermediate band research. Black-Right-Pointing-Pointer We measured the electronic transport properties in the 7-300 K range. Black-Right-Pointing-Pointer We show an insulator to metallic transition when the intermediate band is formed. Black-Right-Pointing-Pointer The intermediate band is semi-filled and populated by holes. Black-Right-Pointing-Pointer We satisfactorily explain the electrical behavior by an intermediate band model.

  11. Low-temperature synthesis of silicon carbide powder using shungite

    Energy Technology Data Exchange (ETDEWEB)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-07-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  12. Methanogenesis at low temperatures by microflora of tundra wetland soil.

    Science.gov (United States)

    Kotsyurbenko, O R; Nozhevnikova, A N; Soloviova, T I; Zavarzin, G A

    1996-01-01

    Active methanogenesis from organic matter contained in soil samples from tundra wetland occurred even at 6 degrees C. Methane was the only end product in balanced microbial community with H2/CO2 as a substrate, besides acetate was produced as an intermediate at temperatures below 10 degrees C. The activity of different microbial groups of methanogenic community in the temperature range of 6-28 degrees C was investigated using 5% of tundra soil as inoculum. Anaerobic microflora of tundra wetland fermented different organic compounds with formation of hydrogen, volatile fatty acids (VFA) and alcohols. Methane was produced at the second step. Homoacetogenic and methanogenic bacteria competed for such substrates as hydrogen, formate, carbon monoxide and methanol. Acetogens out competed methanogens in an excess of substrate and low density of microbial population. Kinetic analysis of the results confirmed the prevalence of hydrogen acetogenesis on methanogenesis. Pure culture of acetogenic bacteria was isolated at 6 degrees C. Dilution of tundra soil and supply with the excess of substrate disbalanced the methanoigenic microbial community. It resulted in accumulation of acetate and other VFA. In balanced microbial community obviously autotrophic methanogens keep hydrogen concentration below a threshold for syntrophic degradation of VFA. Accumulation of acetate- and H2/CO2-utilising methanogens should be very important in methanogenic microbial community operating at low temperatures.

  13. Carbon diffusion behavior in molybdenum at relatively low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Hiraoka, Yutaka, E-mail: hiraoka@dap.ous.ac.j [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Imamura, Kyosuke [Graduate School of Science, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Kadokura, Takanori; Yamamoto, Yoshiharu [Materials Research Department, A.L.M.T. Corp., 2 Iwasekoshi-machi, Toyama 931-8543 (Japan)

    2010-01-07

    Purpose of this study is to investigate the carbon diffusion behavior in pure molybdenum at relatively low temperatures by means of fracture surface observation. Carbon addition was performed at a temperature of 1273-1373 K with the heating time being changed. Fracture surface of the specimen after carbon addition was examined using SEM and the carbon diffusion distance was estimated from the change of fracture mode as a function of the distance from the surface. Results are summarized as follows. First, the carbon diffusion distance increased approximately linearly with the increase of heating time from 1.2 to 10.8 ks. This relationship does not agree with that obtained at much higher temperatures. From Arrhenius plots of the slope of the straight line and the temperature, activation energy was calculated (155 kJ/mol). Secondly, the carbon diffusion distance estimated in this study was generally larger than that simulated using the data of Rudman, particularly at a longer heating time.

  14. Solvent refining of low-temperature tar with liquid ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Ishida, K

    1953-01-01

    The middle fractions of low-temperature tar were treated with mixed solutions of H/sub 2/O and liquid NH/sub 3/ at 0/sup 0/ and 20/sup 0/, and with liquid NH/sub 3/ at -10, 0, + 10, and 20/sup 0/, and phase equilibrium between tar acids, neutral oil, and solvents were studied. The distribution ratio ranged from less than 1 to greater than 1 when the solvent contained about 20 percent (by weight) H/sub 2/O. When the solvent contained less than 85 percent (by weight) NH/sub 3/, the yield of extract was small but the purity of phenols in the extracted oil was above 90 percent. Solvent containing about 85 percent NH/sub 3/ (by weight) is considered optimum for separating tar acids from oils. A novel definition is proposed for solvent selectivity as the difference between the concentration of the solute in the extract layer, on a solvent-free basis, and the concentration in the raffinate layer.

  15. High pressure apparatus for neutron scattering at low temperature

    International Nuclear Information System (INIS)

    Munakata, Koji; Uwatoko, Yoshiya; Aso, Naofumi

    2010-01-01

    Effects of pressure on the physical properties are very important for understanding highly correlated electron systems, in which pressure-induced attractive phenomena such as superconductivity and magnetically ordered non-Fermi liquid have been observed. Up to now, many scientists have developed a lot of high pressure apparatus for each purpose. The characteristic features of various materials and pressure transmitting media for use of high pressure apparatus are reported. Then, two kinds of clamp type high-pressure cell designed for low-temperature neutron diffraction measurements are shown; one is a piston cylinder type high-pressure cell which can be attached to the dilution refrigerator, and the other one is a newly-developed cubic anvil type high-pressure cell which can generate pressure above 7GPa. We also introduce the results of magnetic neutron scattering under pressure on a pressure-induced superconducting ferromagnet UGe 2 in use of the piston cylinder type clamp cell, and those on an iron arsenide superconductor SrFe 2 As 2 in use of the cubic anvil type clamp cell. (author)

  16. Low temperature solid oxide electrolytes (LT-SOE): A review

    Science.gov (United States)

    Singh, B.; Ghosh, S.; Aich, S.; Roy, B.

    2017-01-01

    Low temperature solid oxide fuel cell (LT-SOFC) can be a source of power for vehicles, online grid, and at the same time reduce system cost, offer high reliability, and fast start-up. A huge amount of research work, as evident from the literature has been conducted for the enhancement of the ionic conductivity of LT electrolytes in the last few years. The basic conduction mechanisms, advantages and disadvantages of different LT oxide ion conducting electrolytes {BIMEVOX systems, bilayer systems including doped cerium oxide/stabilised bismuth oxide and YSZ/DCO}, mixed ion conducting electrolytes {doped cerium oxides/alkali metal carbonate composites}, and proton conducting electrolytes {doped and undoped BaCeO3, BaZrO3, etc.} are discussed here based on the recent research articles. Effect of various material aspects (composition, doping, layer thickness, etc.), fabrication methods (to achieve different microstructures and particle size), design related strategies (interlayer, sintering aid etc.), characterization temperature & environment on the conductivity of the electrolytes and performance of the fuel cells made from these electrolytes are shown in tabular form and discussed. The conductivity of the electrolytes and performance of the corresponding fuel cells are compared. Other applications of the electrolytes are mentioned. A few considerations regarding the future prospects are pointed.

  17. A Computational Framework for Efficient Low Temperature Plasma Simulations

    Science.gov (United States)

    Verma, Abhishek Kumar; Venkattraman, Ayyaswamy

    2016-10-01

    Over the past years, scientific computing has emerged as an essential tool for the investigation and prediction of low temperature plasmas (LTP) applications which includes electronics, nanomaterial synthesis, metamaterials etc. To further explore the LTP behavior with greater fidelity, we present a computational toolbox developed to perform LTP simulations. This framework will allow us to enhance our understanding of multiscale plasma phenomenon using high performance computing tools mainly based on OpenFOAM FVM distribution. Although aimed at microplasma simulations, the modular framework is able to perform multiscale, multiphysics simulations of physical systems comprises of LTP. Some salient introductory features are capability to perform parallel, 3D simulations of LTP applications on unstructured meshes. Performance of the solver is tested based on numerical results assessing accuracy and efficiency of benchmarks for problems in microdischarge devices. Numerical simulation of microplasma reactor at atmospheric pressure with hemispherical dielectric coated electrodes will be discussed and hence, provide an overview of applicability and future scope of this framework.

  18. RELAP5 Low Temperature Overpressurization Analysis for NPP Krsko

    International Nuclear Information System (INIS)

    Basic, I.; Krajnc, B.; Bajs, T.

    2000-01-01

    NEK has expressed interest in the acceptability of removing the autoclosure interlock (ACI) on the Residual Heat Removal System (RHRS) suction/isolation valves. This interest is in response to growing concerns about the loss of residual heat removal capability during cold shutdown and refueling operations. This article describes effort done to justify removal of the ACI in the light of low temperature overpressure protection of Reactor Coolant System (RCS) and RHRS and interfacing system LOCA potential. The intent of this article is to review the NEK RHRS relief valves sizing design basis and verify if the relief valves provide RHRS overpressure protection for the events possible at cold shutdown. Inadvertent isolation of RHRS during hot and cold shutdown (with reactor coolant system closed and temperatures below 177o Code 4 and5) presents one of the major safety concerns in this mode of operation. Detailed RELAP5 model of NPP Kriko following steam generator (SG) replacement and core uprate has been used in the frame of this analysis verification of RHRS relief valves sizing. The following limiting cases for cold shutdown with RCS solid conditions have been analyzed: - ransients that affect the system input/output mass balance, - ransients that affect the heat input/removal balance. (author)

  19. Low temperature self-cleaning properties of superhydrophobic surfaces

    Science.gov (United States)

    Wang, Fajun; Shen, Taohua; Li, Changquan; Li, Wen; Yan, Guilong

    2014-10-01

    Outdoor surfaces are usually dirty surfaces. Ice accretion on outdoor surfaces could lead to serious accidents. In the present work, the superhydrophobic surface based on 1H, 1H, 2H, 2H-Perfluorodecanethiol (PFDT) modified Ag/PDMS composite was prepared to investigate the anti-icing property and self-cleaning property at temperatures below freezing point. The superhydrophobic surface was deliberately polluted with activated carbon before testing. It was observed that water droplet picked up dusts on the cold superhydrophobic surface and took it away without freezing at a measuring temperature of -10 °C. While on a smooth PFDT surface and a rough surface base on Ag/PDMS composite without PFDT modification, water droplets accumulated and then froze quickly at the same temperature. However, at even lower temperature of -12 °C, the superhydrophobic surface could not prevent the surface water from icing. In addition, it was observed that the frost layer condensed from the moisture pay an important role in determining the low temperature self-cleaning properties of a superhydrophobic surface.

  20. Large lattice relaxation deep levels in neutron-irradiated GaN

    International Nuclear Information System (INIS)

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out